WorldWideScience

Sample records for high carrier mobility

  1. Highly mobile carriers in iron-based superconductors

    Science.gov (United States)

    Ovchenkov, Y. A.; Chareev, D. A.; Kulbachinskii, V. A.; Kytin, V. G.; Presnov, D. E.; Volkova, O. S.; Vasiliev, A. N.

    2017-03-01

    The field and temperature dependencies of the resistivity and Hall effect are measured for FeSe{}1-xS{}x (x = 0.04, 0.09, and 0.19) single crystals. Sample FeSe{}0.81S{}0.19 does not show a transition to an orthorhombic phase and at low temperatures exhibits transport properties, which are very different from those of orthorhombic samples. The behavior of FeSe{}0.81S{}0.19 is well described by the simple two-band model with comparable values of the hole and electron mobilities. The characteristics of the low-temperature transport properties of the orthorhombic Fe(SeS) samples are largely determined by the presence of a small number of highly mobile carriers, which may originate from the local regions of the Fermi surface, presumably, nearby the Van Hove singularity points. Our results, for the first time, demonstrate a strong evolution of a tiny band of highly mobile electrons at a tetragonal to orthorhombic quantum phase transition. The behavior of this band can be the reason for the diverging nematic susceptibility, determined from elastoresistivity, which is considered one of the most intriguing phenomena in the physics of iron-based superconductors.

  2. Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors

    OpenAIRE

    Farmer, Damon B.; Chiu, Hsin-Ying; Lin, Yu-Ming; Jenkins, Keith A.; Xia, Fengnian; Avouris, Phaedon

    2009-01-01

    We utilize an organic polymer buffer layer between graphene and conventional gate dielectrics in top-gated graphene transistors. Unlike other insulators, this dielectric stack does not significantly degrade carrier mobility, allowing for high field-effect mobilities to be retained in top-gate operation. This is demonstrated in both two-point and four-point analysis, and in the high-frequency operation of a graphene transistor. Temperature dependence of the carrier mobility suggests that phono...

  3. High charge-carrier mobility enables exploitation of carrier multiplication in quantum-dot films

    NARCIS (Netherlands)

    Suchand Sandeep, C.S.; Ten Cate, S.; Schins, J.M.; Savenije, T.J.; Liu, Y.; Law, M.; Kinge, S.; Houtepen, A.J.; Siebbeles, L.D.A.

    2013-01-01

    Carrier multiplication, the generation of multiple electron–hole pairs by a single photon, is of great interest for solar cells as it may enhance their photocurrent. This process has been shown to occur efficiently in colloidal quantum dots, however, harvesting of the generated multiple charges has

  4. High charge carrier mobility and efficient charge separation in highly soluble perylenetetracarboxyl-diimides

    NARCIS (Netherlands)

    Günbaş, D.D.; Xue, C.; Patwardhan,S.; Fravventura, M.C.; Zhang, H.; Jager, W.F.; Sudhölter, E.J.R.; Laurens D. A.; Siebbeles, L.D.A.; Savenije, T.J.; Jin, S.; Grozema, F.C.

    2014-01-01

    In this communication we report on the synthesis and charge mobility of highly soluble perylenebisimid derivatives.We show that introduction of alkylester side chains results in compounds combining a high solubility with charge mobilities up to 0.22 cm2 V_1 s_1. These materials are therefore interes

  5. In-plane heterostructures of Sb/Bi with high carrier mobility

    Science.gov (United States)

    Zhao, Pei; Wei, Wei; Sun, Qilong; Yu, Lin; Huang, Baibiao; Dai, Ying

    2017-06-01

    In-plane two-dimensional (2D) heterostructures have been attracting public attention due to their distinctive properties. However, the pristine materials that can form in-plane heterostructures are reported only for graphene, hexagonal BN, transition-metal dichalcogenides. It will be of great significance to explore more suitable 2D materials for constructing such ingenious heterostructures. Here, we demonstrate two types of novel seamless in-plane heterostructures combined by pristine Sb and Bi monolayers by means of first-principle approach based on density functional theory. Our results indicate that external strain can serve as an effective strategy for bandgap engineering, and the transition from semiconductor to metal occurs when a compressive strain of -8% is applied. In addition, the designed heterostructures possess direct band gaps with high carrier mobility (˜4000 cm2 V-1 s-1). And the mobility of electrons and holes have huge disparity along the direction perpendicular to the interface of Sb/Bi in-plane heterostructures. It is favorable for carriers to separate spatially. Finally, we find that the band edge positions of Sb/Bi in-plane heterostructures can meet the reduction potential of hydrogen generation in photocatalysis. Our results not only offer alternative materials to construct versatile in-plane heterostructures, but also highlight the applications of 2D in-plane heterostructures in diverse nanodevices and photocatalysis.

  6. Electronic characteristics of p-type transparent SnO monolayer with high carrier mobility

    Science.gov (United States)

    Du, Juan; Xia, Congxin; Liu, Yaming; Li, Xueping; Peng, Yuting; Wei, Shuyi

    2017-04-01

    More recently, two-dimensional (2D) SnO nanosheets are attaching great attention due to its excellent carrier mobility and transparent characteristics. Here, the stability, electronic structures and carrier mobility of SnO monolayer are investigated by using first-principles calculations. The calculations of the phonon dispersion spectra indicate that SnO monolayer is dynamically stable. Moreover, the band gap values are decreased from 3.93 eV to 2.75 eV when the tensile strain is applied from 0% to 12%. Interestingly, SnO monolayer is a p-type transparent semiconducting oxide with hole mobility of 641 cm2 V-1 s-1, which is much higher than that of MoS2 monolayer. These findings make SnO monolayer becomes a promising 2D material for applications in nanoelectronic devices.

  7. Solvent additive to achieve highly ordered nanostructural semicrystalline DPP copolymers: toward a high charge carrier mobility.

    Science.gov (United States)

    An, Tae Kyu; Kang, Il; Yun, Hui-jun; Cha, Hyojung; Hwang, Jihun; Park, Seonuk; Kim, Jiye; Kim, Yu Jin; Chung, Dae Sung; Kwon, Soon-Ki; Kim, Yun-Hi; Park, Chan Eon

    2013-12-23

    A facile spin-coating method in which a small percentage of the solvent additive, 1-chloronaphthalene (CN), is found to increase the drying time during film deposition, is reported. The field-effect mobility of a PDPPDBTE film cast from a chloroform-CN mixed solution is 0.46 cm(2) V(-1) s(-1). The addition of CN to the chloroform solution facilitates the formation of highly crystalline polymer structures.

  8. Charging effects on the carrier mobility in silicon-on-insulator wafers covered with a high-k layer

    Science.gov (United States)

    Halley, D.; Norga, G.; Guiller, A.; Fompeyrine, J.; Locquet, J. P.; Drechsler, U.; Siegwart, H.; Rossel, C.

    2003-11-01

    The carrier mobility μ in low-doped silicon-on-insulator wafers is found to be strongly modified by the deposition of a thin ZrO2 or SrZrO3 top layer grown by molecular-beam epitaxy. Pseudo-metal-oxide-semiconductor field-effect-transistor measurements performed on several samples clearly show a correlation between μ and the density of interface traps (Dit) at the Si/buried-oxide interface. The reduction of Dit by a forming gas anneal leads to a corresponding increase in mobility. Moreover, the high-k/Si interface can contribute to the total drain current via the creation of an inversion channel induced by trapped charges in the high-k layer. Using Hall-effect measurements, we took advantage of this additional current to evaluate the carrier mobility at the high-k/Si interface, without the need of a top gate electrode.

  9. Anisotropic charge carrier mobilities in bulk silicon at high electric fields

    CERN Document Server

    Becker, Julian; Klanner, Robert

    2010-01-01

    The mobility of electrons and holes in silicon depends on many parameters. Two of them are the electric field and the temperature. It has been observed previously that the mobility in the transition region between ohmic transport and saturation velocities is a function of the orientation of the crystal lattice. This paper presents a new set of parameters for the mobility as function of temperature and electric field for $$ and $$ crystal orientation. These parameters are derived from time of flight measurements of drifting charge carriers in planar p$^+$nn$^+$ diodes in the temperature range between -30$^\\circ$C and 50$^\\circ$C and electric fields of 2$\\times$10$^3$~V/cm to 2$\\times$10$^4$~V/cm.

  10. Towards high charge carrier mobilities by rational design of organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Andrienko, Denis; Ruehle, Victor; Baumeier, Bjoern; Vehoff, Thorsten; Lukyanov, Alexander; Kremer, Kurt [Max Planck Institute for Polymer Research, Mainz (Germany); Marcon, Valentina [Technische Universitaet Darmstadt (Germany); Kirkpatrick, James; Nelson, Jenny [Imperial College London (United Kingdom); Lennartz, Christian [BASF AG, Ludwigshafen (Germany)

    2010-07-01

    The role of material morphology on charge carrier mobility in partially disordered organic semiconductors is discussed for several classes of materials: derivatives of hexabenzocoronenens, perylenediimides, triangularly-shaped polyaromatic hydrocarbons, and Alq{sub 3}. Simulations are performed using a package developed by Imperial College, London and Max Planck Institute for Polymer Research, Mainz (votca.org). This package combines several techniques into one scheme: quantum chemical methods for the calculation of molecular electronic structures and reorganization energies; molecular dynamics and systematic coarse-graining approaches for simulation of self-assembly and relative positions and orientations of molecules on large scales; kinetic Monte Carlo and master equation for studies of charge transport.

  11. Measurement of high carrier mobility in graphene in an aqueous electrolyte environment

    Science.gov (United States)

    Brown, Morgan A.; Crosser, Michael S.; Leyden, Matthew R.; Qi, Yabing; Minot, Ethan D.

    2016-08-01

    Graphene is a promising material for applications in aqueous electrolyte environments. To explore the impact of such environments on graphene's electrical properties, we performed Hall bar measurements on electrolyte-gated graphene. Assuming a Drude model, we find that the room temperature carrier mobility in water-gated, SiO2-supported graphene reaches 7000 cm2/Vs, comparable to the best dry SiO2-supported graphene devices. Our results show that the electrical performance of graphene is robust, even in the presence of dissolved ions that introduce an additional mechanism for Coulomb scattering.

  12. High carrier mobility of CoPc wires based field-effect transistors using bi-layer gate dielectric

    Directory of Open Access Journals (Sweden)

    Murali Gedda

    2013-11-01

    Full Text Available Polyvinyl alcohol (PVA and anodized Al2O3 layers were used as bi-layer gate for the fabrication of cobalt phthalocyanine (CoPc wire base field-effect transistors (OFETs. CoPc wires were grown on SiO2 surfaces by organic vapor phase deposition method. These devices exhibit a field-effect carrier mobility (μEF value of 1.11 cm2/Vs. The high carrier mobility for CoPc molecules is attributed to the better capacitive coupling between the channel of CoPc wires and the gate through organic-inorganic dielectric layer. Our measurements also demonstrated the way to determine the thicknesses of the dielectric layers for a better process condition of OFETs.

  13. Study of high mobility carriers in Ni-doped CdO films

    Indian Academy of Sciences (India)

    A A Dakhel

    2013-10-01

    Cadmium oxide (CdO) doped with different amounts of nickel ion thin films have been prepared on silicon and glass substrates by vacuum evaporation technique. The effects of nickel doping on the structural, electrical, optical and optoelectronic properties of the host CdO films were systematically studied. The sample elemental composition was determined by the X-ray fluorescence spectroscopy method. The X-ray diffraction method was used to study the crystalline structure of the samples. It shows that some of Ni3+ ions occupy mainly locations when in interstitial positions and Cd2+-ion vacancies of CdO lattice. The bandgap of Ni-doped CdO suffers narrowing till 10–12% compared to undoped CdO. Such bandgap narrowing was studied within the framework of the available models. The electrical behaviours show that all the prepared Ni-doped CdO films are degenerate semiconductors. However, the nickel doping influences all the optoelectrical properties of CdO. Their d.c. conductivity, carrier concentration and mobility increased compared to undoped CdO film. The largest mobility of 112.6 cm2/V.s was measured for 1–2% Ni-doped CdO film. From optoelectronics point of view, Ni-doped CdO can be used in infrared-transparent-conducting-oxide (NIR–TCO) applications.

  14. Ionic Wind Phenomenon and Charge Carrier Mobility in Very High Density Argon Corona Discharge Plasma

    Science.gov (United States)

    Nur, M.; Bonifaci, N.; Denat, A.

    2014-04-01

    Wind ions phenomenon has been observed in the high density argon corona discharge plasma. Corona discharge plasma was produced by point to plane electrodes and high voltage DC. Light emission from the recombination process was observed visually. The light emission proper follow the electric field lines that occur between point and plane electrodes. By using saturation current, the mobilities of non-thermal electrons and ions have been obtained in argon gas and liquid with variation of density from 2,5 1021 to 2 1022 cm-3. In the case of ions, we found that the behaviour of the apparent mobility inversely proportional to the density or follow the Langevin variation law. For non-thermal electron, mobility decreases and approximately follows a variation of Langevin type until the density <= 0,25 the critical density of argon.

  15. High intrinsic carrier mobility and photon absorption in the perovskite CH3NH3PbI3.

    Science.gov (United States)

    Wang, Youwei; Zhang, Yubo; Zhang, Peihong; Zhang, Wenqing

    2015-05-07

    The carrier transport and optical properties of the hybrid organic-inorganic perovskite CH3NH3PbI3 are investigated using first-principles approaches. We found that the electron and hole mobilities could reach surprisingly high values of 7-30 × 10(3) and 1.5-5.5 × 10(3) cm(2) V(-1) s(-1), respectively, and both are estimated to be much higher than the current experimental measurements. The high carrier mobility is ascribed to the intrinsically small effective masses of anti-bonding band-edge states. The above results imply that there is still space to improve the performance of related solar cells. This material also has a sharp photon absorption edge and an absorption coefficient as high as 10(5) cm(-1), both of which contribute to effective utilization of solar radiation. Although band-edge states are mainly derived from the inorganic ions of Pb and I, thermal movement of the organic base has indirect influences on the bandgap and carrier effective masses, resulting in the temperature-dependent solar cell efficiencies.

  16. Low-temperature carrier dynamics in high-mobility organic transistors of alkylated dinaphtho-thienothiophene as investigated by electron spin resonance

    Energy Technology Data Exchange (ETDEWEB)

    Kinoshita, Yutaro; Tanaka, Hisaaki, E-mail: htanaka@nuap.nagoya-u.ac.jp; Kuroda, Shin-ichi [Department of Applied Physics, Nagoya University, Chikusa, Nagoya 464-8603 (Japan); Shimoi, Yukihiro [Nanosystem Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan); Takimiya, Kazuo [Emergent Molecular Function Research Group, RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198 (Japan)

    2014-07-21

    Charge carriers in high-mobility organic thin-film transistors of alkylated dinaphtho-thienothiophene (C{sub 10}-DNTT) have been directly observed by field-induced electron spin resonance (FI-ESR) down to 4 K. FI-ESR spectra of π-electron hole carriers of C{sub 10}-DNTT exhibited clear anisotropy, indicating a highly organized end-on molecular orientation at the device interface. The intra-grain and inter-grain carrier motion were probed by the motional narrowing effect of the ESR spectra. The intra-grain motion was clearly observed even at 4 K, showing intrinsically high mobility of C{sub 10}-DNTT crystallites. On the other hand, significantly low activation energy of ∼10 meV for inter-grain carrier hopping, compared with pristine DNTT, was observed, which shows that the alkyl substitution drastically enhances the carrier mobility of DNTT system.

  17. How High Local Charge Carrier Mobility and an Energy Cascade in a Three-Phase Bulk Heterojunction Enable >90% Quantum Efficiency

    KAUST Repository

    Burke, Timothy M.

    2013-12-27

    Charge generation in champion organic solar cells is highly efficient in spite of low bulk charge-carrier mobilities and short geminate-pair lifetimes. In this work, kinetic Monte Carlo simulations are used to understand efficient charge generation in terms of experimentally measured high local charge-carrier mobilities and energy cascades due to molecular mixing. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Achieving high carrier mobility exceeding 70 cm2/Vs in amorphous zinc tin oxide thin-film transistors

    Science.gov (United States)

    Kim, Sang Tae; Shin, Yeonwoo; Yun, Pil Sang; Bae, Jong Uk; Chung, In Jae; Jeong, Jae Kyeong

    2017-09-01

    This paper proposes a new defect engineering concept for low-cost In- and Ga-free zinc tin oxide (ZTO) thin-film transistors (TFTs). This concept is comprised of capping ZTO films with tantalum (Ta) and a subsequent modest thermal annealing treatment at 200 °C. The Ta-capped ZTO TFTs exhibited a remarkably high carrier mobility of 70.8 cm2/Vs, low subthreshold gate swing of 0.18 V/decade, threshold voltage of -1.3 V, and excellent ION/OFF ratio of 2 × 108. The improvement (> two-fold) in the carrier mobility compared to the uncapped ZTO TFT can be attributed to the effective reduction of the number of adverse tailing trap states, such as hydroxyl groups or oxygen interstitial defects, which stems from the scavenging effect of the Ta capping layer on the ZTO channel layer. Furthermore, the Ta-capped ZTO TFTs showed excellent positive and negative gate bias stress stabilities. [Figure not available: see fulltext.

  19. Band gap tunning in BN-doped graphene systems with high carrier mobility

    KAUST Repository

    Kaloni, T. P.

    2014-02-17

    Using density functional theory, we present a comparative study of the electronic properties of BN-doped graphene monolayer, bilayer, trilayer, and multilayer systems. In addition, we address a superlattice of pristine and BN-doped graphene. Five doping levels between 12.5% and 75% are considered, for which we obtain band gaps from 0.02 eV to 2.43 eV. We demonstrate a low effective mass of the charge carriers.

  20. High carrier mobility of Sn-doped polycrystalline-Ge films on insulators by thickness-dependent low-temperature solid-phase crystallization

    Science.gov (United States)

    Sadoh, Taizoh; Kai, Yuki; Matsumura, Ryo; Moto, Kenta; Miyao, Masanobu

    2016-12-01

    To realize the advanced thin-film transistors (TFTs), high-carrier-mobility semiconductor films on insulator structures should be fabricated with low-temperature processing conditions (≤500 °C). To achieve this, we investigated the solid-phase crystallization of amorphous-GeSn films on insulating substrates under a wide range of Sn concentrations (0%-20%), film thicknesses (30-500 nm), and annealing temperatures (380-500 °C). Our results reveal that a Sn concentration close to the solid solubility of Sn in Ge (˜2%) is effective in increasing the grain-size of poly-GeSn. In addition, we discovered that the carrier mobility depends on the film thickness, where the mobilities are determined by the counterbalance between two different carrier scattering mechanisms. Here, vacancy-related defects dominate the carrier scattering near the insulating substrates (≤˜120 nm), and grain-size determined by bulk nucleation dominates the grain-boundary scattering of thick films (≥˜200 nm). Consequently, we obtained the maximum mobilities in samples with a Sn concentration of 2% and a film thickness of 200 nm. The effect of increasing the grain-size of poly-GeSn by lowering the annealing temperature was also clarified. By combining these results, a very high carrier mobility of 320 cm2/Vs was obtained at a low temperature of 380 °C. This mobility is about 2.5 times as high as previously reported data for Ge and GeSn films grown at low temperatures (≤500 °C). Our technique therefore opens up the possibility of high-speed TFTs for use in the next generation of electronics.

  1. Growth Related Carrier Mobility Enhancement of Pentacene Thin-Film Transistors with High-k Oxide Gate Dielectric

    Institute of Scientific and Technical Information of China (English)

    YU Ai-Fang; QI Qiong; JIANG Peng; JIANG Chao

    2009-01-01

    Carrier mobifity enhancement from 0.09 to 0.59cm2/Vs is achieved for pentacene-based thin-film transistors (TFTs) by modifying the HfO2 gate dielectric with a polystyrene (PS) thin film. The improvement of the transistor's performance is found to be strongly related to the initial film morphologies of pentacene on the dielectrics. In contrast to the three-dimensional island-like growth mode on the HfO2 surface, the Stranski-Krastanov growth mode on the smooth and nonpolar PS/HfO2 surface is believed to be the origin of the excellent carrier mobifity of the TFTs. A large well-connected first monolayer with fewer boundaries is formed via the Stranski-Krastanov growth mode, which facilitates a charge transport parallel to the substrate and promotes higher carrier mobility.

  2. Carbon phosphide monolayers with superior carrier mobility

    Science.gov (United States)

    Wang, Gaoxue; Pandey, Ravindra; Karna, Shashi P.

    2016-04-01

    Two dimensional (2D) materials with a finite band gap and high carrier mobility are sought after materials from both fundamental and technological perspectives. In this paper, we present the results based on the particle swarm optimization method and density functional theory which predict three geometrically different phases of the carbon phosphide (CP) monolayer consisting of sp2 hybridized C atoms and sp3 hybridized P atoms in hexagonal networks. Two of the phases, referred to as α-CP and β-CP with puckered or buckled surfaces are semiconducting with highly anisotropic electronic and mechanical properties. More remarkably, they have the lightest electrons and holes among the known 2D semiconductors, yielding superior carrier mobility. The γ-CP has a distorted hexagonal network and exhibits a semi-metallic behavior with Dirac cones. These theoretical findings suggest that the binary CP monolayer is a yet unexplored 2D material holding great promise for applications in high-performance electronics and optoelectronics.Two dimensional (2D) materials with a finite band gap and high carrier mobility are sought after materials from both fundamental and technological perspectives. In this paper, we present the results based on the particle swarm optimization method and density functional theory which predict three geometrically different phases of the carbon phosphide (CP) monolayer consisting of sp2 hybridized C atoms and sp3 hybridized P atoms in hexagonal networks. Two of the phases, referred to as α-CP and β-CP with puckered or buckled surfaces are semiconducting with highly anisotropic electronic and mechanical properties. More remarkably, they have the lightest electrons and holes among the known 2D semiconductors, yielding superior carrier mobility. The γ-CP has a distorted hexagonal network and exhibits a semi-metallic behavior with Dirac cones. These theoretical findings suggest that the binary CP monolayer is a yet unexplored 2D material holding great

  3. Contactless Mobility, Carrier Density, and Sheet Resistance Measurements on Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers

    Science.gov (United States)

    2015-02-01

    Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers by Randy P Tompkins and Danh Nguyen Approved for...High Electron Mobility Transistor (HEMT) Wafers by Randy P. Tompkins Sensors and Electron Devices Directorate Danh Nguyen Lehighton...Resistance Measurements on Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM

  4. Interplay between hopping and band transport in high-mobility disordered semiconductors at large carrier concentrations: The case of the amorphous oxide InGaZnO

    Science.gov (United States)

    Fishchuk, I. I.; Kadashchuk, A.; Bhoolokam, A.; de Jamblinne de Meux, A.; Pourtois, G.; Gavrilyuk, M. M.; Köhler, A.; Bässler, H.; Heremans, P.; Genoe, J.

    2016-05-01

    We suggest an analytic theory based on the effective medium approximation (EMA) which is able to describe charge-carrier transport in a disordered semiconductor with a significant degree of degeneration realized at high carrier concentrations, especially relevant in some thin-film transistors (TFTs), when the Fermi level is very close to the conduction-band edge. The EMA model is based on special averaging of the Fermi-Dirac carrier distributions using a suitably normalized cumulative density-of-state distribution that includes both delocalized states and the localized states. The principal advantage of the present model is its ability to describe universally effective drift and Hall mobility in heterogeneous materials as a function of disorder, temperature, and carrier concentration within the same theoretical formalism. It also bridges a gap between hopping and bandlike transport in an energetically heterogeneous system. The key assumption of the model is that the charge carriers move through delocalized states and that, in addition to the tail of the localized states, the disorder can give rise to spatial energy variation of the transport-band edge being described by a Gaussian distribution. It can explain a puzzling observation of activated and carrier-concentration-dependent Hall mobility in a disordered system featuring an ideal Hall effect. The present model has been successfully applied to describe experimental results on the charge transport measured in an amorphous oxide semiconductor, In-Ga-Zn-O (a-IGZO). In particular, the model reproduces well both the conventional Meyer-Neldel (MN) compensation behavior for the charge-carrier mobility and inverse-MN effect for the conductivity observed in the same a-IGZO TFT. The model was further supported by ab initio calculations revealing that the amorphization of IGZO gives rise to variation of the conduction-band edge rather than to the creation of localized states. The obtained changes agree with the one we

  5. Concentration and mobility of charge carriers in thin polymers at high temperature determined by electrode polarization modeling

    Science.gov (United States)

    Diaham, Sombel; Locatelli, Marie-Laure

    2012-07-01

    Charge carrier concentration (n0) and effective mobility (μeff) are reported in two polymer films (dielectric spectroscopy data. It is shown that the glass transition temperature (Tg) occurrence has a strong influence on the temperature dependence of n0 and μeff. We carry out that n0 presents two distinct Arrhenius-like behaviors below and above Tg, while μeff exhibits a Vogel-Fulcher-Tamman behavior only above Tg whatever the polymer under study. For polyimide films, n0 varies from 1 × 1014 to 4 × 1016 cm-3 and μeff from 1 × 10-8 to 2 × 10-6 cm2 V-1 s-1 between 200 °C to 400 °C. Poly(amide-imide) films show n0 values between 6 × 1016 and 4 × 1018 cm-3 from 270 °C to 400 °C, while μeff varies between 1 × 10-10 and 2 × 10-7 cm2 V-1 s-1. Considering the activation energies of these physical parameters in the temperature range of investigation, n0 and μeff values appear as coherent with those reported in the literature at lower temperature (Polyimide films appear as good candidates due to nS values less than 1011 cm-2 up to 300 °C.

  6. Charge-carrier mobilities in disordered semiconducting polymers: effects of carrier density and electric field

    Science.gov (United States)

    Meisel, K. D.; Pasveer, W. F.; Cottaar, J.; Tanase, C.; Coehoorn, R.; Bobbert, P. A.; Blom, P. W. M.; de Leeuw, D. M.; Michels, M. A. J.

    2006-02-01

    We model charge transport in disordered semiconducting polymers by hopping of charge carriers on a square lattice of sites with Gaussian on-site energy disorder, using Fermi-Dirac statistics. From numerically exact solutions of the Master equation, we study the dependence of the charge-carrier mobility on temperature, carrier density, and electric field. Our results are used in calculating current-voltage characteristics of hole-only polymer diodes. It is found that very good fits to experimental current-voltage characteristics can be obtained at different temperatures, with reasonable fitting parameters for the width of the Gaussian density of states and the lattice constant. In agreement with the experiments we find that the density dependence is dominant over the field dependence. Only at high fields and low temperatures the field dependence becomes noticeable. The potential and current distribution show strong inhomogeneities, which may have important consequences for the operation of polymer opto-electronic devices.

  7. Resistivity, carrier concentration, and carrier mobility of electrochemically deposited CdTe films

    OpenAIRE

    Takahashi, Makoto; Uosaki, Kohei; Kita, Hideaki; Yamaguchi, Shoji

    1986-01-01

    The electrical type, resistivity, and donor or acceptor concentration of CdTe films deposited electrochemically at various potentials were measured. The carrier mobilities of the films were determined from these results. The deposition potential dependence of the mobility was small and the deposition potential dependence of the resistivity was mainly controlled by the deposition potential dependence of the donor or acceptor concentration. The carrier mobilities were very small compared with t...

  8. Mobility and carrier density in nanoporous indium tin oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Weissbon, Jaqueline; Gondorf, Andreas; Geller, Martin; Lorke, Axel [Fakultaet fuer Physik and CeNIDE, Universitaet Duisburg-Essen, D-47048 Duisburg (Germany); Inhester, Martina; Prodi-Schwab, Anna; Adam, Dieter [Evonik Degussa GmbH, D-45772 Marl (Germany)

    2011-07-01

    Indium tin oxide (ITO) has become an indispensable material for a range of electronic devices. It is transparent in the entire visible range and electrically conducting, hence, a well suited material for transparent electrodes. An interesting possibility to realize transparent, conducting films without the use of vacuum techniques is the printing of dispersions containing ITO nanoparticles. We study here the charge carrier concentration and mobility of various nanoporous indium tin oxide (ITO) films, using Hall measurements and optical spectroscopy. For the carrier density inside the particles (2-4 . 10{sup 20} cm{sup -3}), the results of these complementary measurement techniques are in good agreement with each other and suggest that even in highly porous materials the common equations for the Hall resistance can be applied. However, for the mobilities in these layers the results differ very strongly: from 50 (cm{sup 2})/(Vs) in optical spectroscopy (which is comparable to bulk ITO) to 0.4 (cm{sup 2})/(Vs) in Hall measurements.This suggests that the mobility for electrical transport in nanoporous ITO films is strongly suppressed by scattering at interparticle boundaries.

  9. GeP3: A Small Indirect Band Gap 2D Crystal with High Carrier Mobility and Strong Interlayer Quantum Confinement.

    Science.gov (United States)

    Jing, Yu; Ma, Yandong; Li, Yafei; Heine, Thomas

    2017-03-08

    We propose a two-dimensional crystal that possesses low indirect band gaps of 0.55 eV (monolayer) and 0.43 eV (bilayer) and high carrier mobilities similar to those of phosphorene, GeP3. GeP3 has a stable three-dimensional layered bulk counterpart, which is metallic and known from experiment since 1970. GeP3 monolayer has a calculated cleavage energy of 1.14 J m(-2), which suggests exfoliation of bulk material as viable means for the preparation of mono- and few-layer materials. The material shows strong interlayer quantum confinement effects, resulting in a band gap reduction from mono- to bilayer, and then to a semiconductor-metal transition between bi- and triple layer. Under biaxial strain, the indirect band gap can be turned into a direct one. Pronounced light absorption in the spectral range from ∼600 to 1400 nm is predicted for monolayer and bilayer and promises applications in photovoltaics.

  10. Mobile charge carriers in pulse-irradiated poly- and oligothiophenes

    NARCIS (Netherlands)

    Haas, M.P. de; Laan, G.P. van der; Wegewijs, B.; Leeuw, D.M. de; Bäuerle, P.; Rep, D.B.A.; Fichou, D.

    1999-01-01

    Lower limits of the intrinsic charge carrier mobility in the solid phase of a series of oligothiophene compounds were determined with the pulse-radiolysis time-resolved microwave conductivity technique, PR-TRMC. The mobility values fall roughly into two regimes and show no correlation with the numbe

  11. Investigation of carrier mobility degradation effects on MOSFET leakage simulations

    CSIR Research Space (South Africa)

    Twala, B

    2016-01-01

    Full Text Available The term carrier mobility generally alludes to both electron and hole mobility in semiconductors. These parameters characterize how quickly an electron and/or hole moves through a metal or semiconductor when under the influence of an electric field...

  12. Anisotropy of the charge-carrier mobility in polydiacetylene crystals

    Science.gov (United States)

    Hoofman, Romano J. O. M.; Siebbeles, Laurens D. A.; de Haas, Matthijs P.; Hummel, Andries; Bloor, David

    1998-08-01

    The anisotropic mobility of excess charge carriers in pure and mixed crystals of two polydiacetylene derivatives was determined. The charge carriers were produced by pulsed irradiation and detected by time-resolved measurement of the microwave conductivity. The charge-carrier mobility was measured as a function of the orientation of the polymer backbone in the crystal with respect to the probing electric microwave field. A lower limit in the intrinsic anisotropy in the charge-carrier mobility was found to be 15 in favor of charge transport in the direction of the polymer backbone as compared to the transverse direction for polydiacetylene-(bis p-fluorobenzene sulfonate) (pFBS), while a value of 90 was found for polydiacetylene-(bis p-toluene sulfonate) (pTS) and the 50:50 pTS/FBS copolymer. A lower limit of the charge-carrier mobility along the backbone of 3 cm2/V s was found for both pTS and pFBS. The charge-carrier mobility in the copolymer was found to be one order of magnitude lower than in the pure polymers.

  13. Charge-carrier mobilities in disordered semiconducting polymers: effects of carrier density and electric field

    Energy Technology Data Exchange (ETDEWEB)

    Meisel, K.D.; Pasveer, W.F.; Cottaar, J.; Bobbert, P.A.; Michels, M.A.J. [Group Polymer Physics, Eindhoven Polymer Laboratories and Dutch Polymer Institute, Technische Universiteit Eindhoven, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Tanase, C.; Blom, P.W.M. [Materials Science Centre and Dutch Polymer Institute, Nijenborgh 4, 9747 AG Groningen (Netherlands); Coehoorn, R.; Leeuw, D.M. de [Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven (Netherlands)

    2006-02-01

    We model charge transport in disordered semiconducting polymers by hopping of charge carriers on a square lattice of sites with Gaussian on-site energy disorder, using Fermi-Dirac statistics. From numerically exact solutions of the Master equation, we study the dependence of the charge-carrier mobility on temperature, carrier density, and electric field. Our results are used in calculating current-voltage characteristics of hole-only polymer diodes. It is found that very good fits to experimental current-voltage characteristics can be obtained at different temperatures, with reasonable fitting parameters for the width of the Gaussian density of states and the lattice constant. In agreement with the experiments we find that the density dependence is dominant over the field dependence. Only at high fields and low temperatures the field dependence becomes noticeable. The potential and current distribution show strong inhomogeneities, which may have important consequences for the operation of polymer opto-electronic devices. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Dispersion and polarization dependence of mobile carrier optical nonlinearities

    Science.gov (United States)

    Rustagi, K. C.

    1984-06-01

    Based on the author's earlier work, it is shown that the proper inclusion of carrier scattering should strongly modify the frequency and polarization dependence of optical nonlinearities due to mobile carriers in semiconductors. When the momentum relaxation is much faster than the energy relaxation, the intensity dependent refractive index is enhanced, the induced birefringence becomes a sharp function of the difference frequency ωa-ωb, and a collision induced stimulated Raman effect becomes important.

  15. Enhancement of carrier mobility in thin Ge layer by Sn co-doping

    Science.gov (United States)

    Prucnal, S.; Liu, F.; Berencén, Y.; Vines, L.; Bischoff, L.; Grenzer, J.; Andric, S.; Tiagulskyi, S.; Pyszniak, K.; Turek, M.; Drozdziel, A.; Helm, M.; Zhou, S.; Skorupa, W.

    2016-10-01

    We present the development, optimization and fabrication of high carrier mobility materials based on GeOI wafers co-doped with Sn and P. The Ge thin films were fabricated using plasma-enhanced chemical vapour deposition followed by ion implantation and explosive solid phase epitaxy, which is induced by millisecond flash lamp annealing. The influence of the recrystallization mechanism and co-doping of Sn on the carrier distribution and carrier mobility both in n-type and p-type GeOI wafers is discussed in detail. This finding significantly contributes to the state-of-the-art of high carrier mobility-GeOI wafers since the results are comparable with GeOI commercial wafers fabricated by epitaxial layer transfer or SmartCut technology.

  16. Importance of polaron effects for charge carrier mobility above and below pseudogap temperature in superconducting cuprates

    Indian Academy of Sciences (India)

    ORIFJON GANIEV

    2017-06-01

    Polaron effects and charge carrier mobility in high-$T_c$ cuprate superconductors (HTSCs) have been investigated theoretically. The appropriate Boltzmann transport equations under relaxation time approximation were used to calculate the mobility of polaronic charge carriers and bosonic Cooper pairs above and below the pseudogap (PG) temperature $T^\\ast$. It is shown that the scattering of polaronic charge carriers and bosonic Cooper pairs at acoustic and optical phonons are responsible for the charge carrier mobility above and below the PG temperature. We show that the energy scales of the binding energies of large polarons and polaronic Cooper pairs can be identified by PG cross-over temperature on the cuprate phase diagram.

  17. Large enhancements of thermopower and carrier mobility in quantum dot engineered bulk semiconductors.

    Science.gov (United States)

    Liu, Yuanfeng; Sahoo, Pranati; Makongo, Julien P A; Zhou, Xiaoyuan; Kim, Sung-Joo; Chi, Hang; Uher, Ctirad; Pan, Xiaoqing; Poudeu, Pierre F P

    2013-05-22

    The thermopower (S) and electrical conductivity (σ) in conventional semiconductors are coupled adversely through the carriers' density (n) making it difficult to achieve meaningful simultaneous improvements in both electronic properties through doping and/or substitutional chemistry. Here, we demonstrate the effectiveness of coherently embedded full-Heusler (FH) quantum dots (QDs) in tailoring the density, mobility, and effective mass of charge carriers in the n-type Ti(0.1)Zr(0.9)NiSn half-Heusler matrix. We propose that the embedded FH QD forms a potential barrier at the interface with the matrix due to the offset of their conduction band minima. This potential barrier discriminates existing charge carriers from the conduction band of the matrix with respect to their relative energy leading to simultaneous large enhancements of the thermopower (up to 200%) and carrier mobility (up to 43%) of the resulting Ti(0.1)Zr(0.9)Ni(1+x)Sn nanocomposites. The improvement in S with increasing mole fraction of the FH-QDs arises from a drastic reduction (up to 250%) in the effective carrier density coupled with an increase in the carrier's effective mass (m*), whereas the surprising enhancement in the mobility (μ) is attributed to an increase in the carrier's relaxation time (τ). This strategy to manipulate the transport behavior of existing ensembles of charge carriers within a bulk semiconductor using QDs is very promising and could pave the way to a new generation of high figure of merit thermoelectric materials.

  18. First-principles calculations reveal controlling principles for carrier mobilities in semiconductors

    Science.gov (United States)

    Wu, Yu-Ning; Zhang, X.-G.; Pantelides, Sokrates T.

    2016-11-01

    Carrier mobilities remain a key qualifying factor for materials competing for next-generation electronics. It has long been believed that carrier mobilities can be calculated using the Born approximation. Here, we introduce a parameter-free, first-principles approach based on complex-wavevector energy bands which does not invoke the Born expansion. We demonstrate that phonon-limited mobility is controlled by low-resistivity percolation paths, which arise from fluctuations that are beyond the Born approximation. We further demonstrate that, in ionized-impurity scattering, one must account for the effect of the screening charge, which cancels most of the Coulomb tail. Calculated electron mobilities in silicon are in agreement with experimental data. The method is easy to use and can provide guidance in the search for high-mobility device designs.

  19. 77 FR 14012 - Eligible Telecommunications Carrier Designation for Participation in Mobility Fund Phase I

    Science.gov (United States)

    2012-03-08

    ... Telecommunications Carrier Designation for Participation in Mobility Fund Phase I AGENCY: Federal Communications Commission. ACTION: Notice. SUMMARY: In this document, the Commission's Wireless Telecommunications and... Telecommunications Carrier (ETC) Designation from the Commission for participation in Mobility Fund Phase I...

  20. Unified Description of Charge-Carrier Mobilities in Disordered Semiconducting Polymers

    Science.gov (United States)

    Pasveer, W. F.; Cottaar, J.; Tanase, C.; Coehoorn, R.; Bobbert, P. A.; Blom, P. W.; de Leeuw, D. M.; Michels, M. A.

    2005-05-01

    From a numerical solution of the master equation for hopping transport in a disordered energy landscape with a Gaussian density of states, we determine the dependence of the charge-carrier mobility on temperature, carrier density, and electric field. Experimental current-voltage characteristics in devices based on semiconducting polymers are excellently reproduced with this unified description of the mobility. At room temperature it is mainly the dependence on carrier density that plays an important role, whereas at low temperatures and high fields the electric field dependence becomes important. Omission in the past of the carrier-density dependence has led to an underestimation of the hopping distance and the width of the density of states in these polymers.

  1. Two-Dimensional Transition Metal Dichalcogenides and Their Charge Carrier Mobilities in Field-Effect Transistors

    Science.gov (United States)

    Ahmed, Sohail; Yi, Jiabao

    2017-10-01

    Two-dimensional (2D) materials have attracted extensive interest due to their excellent electrical, thermal, mechanical, and optical properties. Graphene has been one of the most explored 2D materials. However, its zero band gap has limited its applications in electronic devices. Transition metal dichalcogenide (TMDC), another kind of 2D material, has a nonzero direct band gap (same charge carrier momentum in valence and conduction band) at monolayer state, promising for the efficient switching devices (e.g., field-effect transistors). This review mainly focuses on the recent advances in charge carrier mobility and the challenges to achieve high mobility in the electronic devices based on 2D-TMDC materials and also includes an introduction of 2D materials along with the synthesis techniques. Finally, this review describes the possible methodology and future prospective to enhance the charge carrier mobility for electronic devices.

  2. Theoretical Study of Carrier Mobility in Two-Dimensional Tetragonal Carbon Allotrope from Porous Graphene

    Institute of Scientific and Technical Information of China (English)

    Song Gao; Hui Xiang; Bo Xu; Yi-Dong Xia; Jiang Yin; Zhi-Guo Liu

    2016-01-01

    The carrier mobility of two-dimensional tetragonal carbon allotrope (T-CA) from porous graphene is investigated by first-principles calculations.T-CA can be constructed from divacancy and Stone-Thrower-Wales defects from graphene.T-CA is a direct semiconductor with a band gap of 0.4 eV at Γ point.T-CA possesses a high carrier mobility of the order of 104 cm2 V-1s-1.As our study demonstrates,T-CA has potential applications for next-generation electronic materials.

  3. Comprehensive approach to intrinsic charge carrier mobility in conjugated organic molecules, macromolecules, and supramolecular architectures.

    Science.gov (United States)

    Saeki, Akinori; Koizumi, Yoshiko; Aida, Takuzo; Seki, Shu

    2012-08-21

    Si-based inorganic electronics have long dominated the semiconductor industry. However, in recent years conjugated polymers have attracted increasing attention because such systems are flexible and offer the potential for low-cost, large-area production via roll-to-roll processing. The state-of-the-art organic conjugated molecular crystals can exhibit charge carrier mobilities (μ) that nearly match or even exceed that of amorphous silicon (1-10 cm(2) V(-1) s(-1)). The mean free path of the charge carriers estimated from these mobilities corresponds to the typical intersite (intermolecular) hopping distances in conjugated organic materials, which strongly suggests that the conduction model for the electronic band structure only applies to μ > 1 cm(2) V(-1) s(-1) for the translational motion of the charge carriers. However, to analyze the transport mechanism in organic electronics, researchers conventionally use a disorder formalism, where μ is usually less than 1 cm(2) V(-1) s(-1) and dominated by impurities, disorders, or defects that disturb the long-range translational motion. In this Account, we discuss the relationship between the alternating-current and direct-current mobilities of charge carriers, using time-resolved microwave conductivity (TRMC) and other techniques including field-effect transistor, time-of-flight, and space-charge limited current. TRMC measures the nanometer-scale mobility of charge carriers under an oscillating microwave electric field with no contact between the semiconductors and the metals. This separation allows us to evaluate the intrinsic charge carrier mobility with minimal trapping effects. We review a wide variety of organic electronics in terms of their charge carrier mobilities, and we describe recent studies of macromolecules, molecular crystals, and supramolecular architecture. For example, a rigid poly(phenylene-co-ethynylene) included in permethylated cyclodextrin shows a high intramolecular hole mobility of 0.5 cm(2) V

  4. Home built equipment for measuring Hall coefficient and charge carrier concentration, mobility and resistivity

    DEFF Research Database (Denmark)

    Borup, Kasper Andersen; Christensen, Mogens; Blichfeld, Anders Bank;

    2011-01-01

    We present here a home built setup for measuring the specific resistivity, hall coefficient, and charge carrier concentration and mobility at elevated temperatures. The system is optimized for measurements of samples ranging between doped semiconductors and high resistivity metals and uses the van...

  5. A self-consistent first-principle based approach to model carrier mobility in organic materials

    Energy Technology Data Exchange (ETDEWEB)

    Meded, Velimir; Friederich, Pascal; Symalla, Franz; Neumann, Tobias; Danilov, Denis; Wenzel, Wolfgang [Institute of Nanotechnology, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

    2015-12-31

    Transport through thin organic amorphous films, utilized in OLEDs and OPVs, has been a challenge to model by using ab-initio methods. Charge carrier mobility depends strongly on the disorder strength and reorganization energy, both of which are significantly affected by the details in environment of each molecule. Here we present a multi-scale approach to describe carrier mobility in which the materials morphology is generated using DEPOSIT, a Monte Carlo based atomistic simulation approach, or, alternatively by molecular dynamics calculations performed with GROMACS. From this morphology we extract the material specific hopping rates, as well as the on-site energies using a fully self-consistent embedding approach to compute the electronic structure parameters, which are then used in an analytic expression for the carrier mobility. We apply this strategy to compute the carrier mobility for a set of widely studied molecules and obtain good agreement between experiment and theory varying over several orders of magnitude in the mobility without any freely adjustable parameters. The work focuses on the quantum mechanical step of the multi-scale workflow, explains the concept along with the recently published workflow optimization, which combines density functional with semi-empirical tight binding approaches. This is followed by discussion on the analytic formula and its agreement with established percolation fits as well as kinetic Monte Carlo numerical approaches. Finally, we skatch an unified multi-disciplinary approach that integrates materials science simulation and high performance computing, developed within EU project MMM@HPC.

  6. Carrier mobility, band tails and defects in microcrystalline silicon

    Science.gov (United States)

    Reynolds, Steve

    2010-11-01

    The development of microcrystalline silicon thin films and devices is briefly reviewed. Transport mechanisms, and the attendant key parameters of carrier mobility, band-tail width and defect density, are linked to film structure and composition. In particular we discuss the wide (but systematic) variations in time-of-flight mobility and its unusual field-dependence. While microcrystalline silicon remains an inferior semiconductor to single-crystal silicon, we propose, and support by means of a computer model, that present device-grade material may be of sufficient quality to justify re-examining whether useful thin-film bipolar devices might be developed. These could find application as more sensitive photo-detectors, and as current drivers in organic LED displays and logic circuits.

  7. Columnar mesophases of hexabenzocoronene derivatives. II. Charge carrier mobility

    Science.gov (United States)

    Kirkpatrick, James; Marcon, Valentina; Kremer, Kurt; Nelson, Jenny; Andrienko, Denis

    2008-09-01

    Combining atomistic molecular dynamic simulations, Marcus-Hush theory description of charge transport rates, and master equation description of charge dynamics, we correlate the temperature-driven change of the mesophase structure with the change of charge carrier mobilities in columnar phases of hexabenzocoronene derivatives. The time dependence of fluctuations in transfer integrals shows that static disorder is predominant in determining charge transport characteristics. Both site energies and transfer integrals are distributed because of disorder in the molecular arrangement. It is shown that the contributions to the site energies from polarization and electrostatic effects are of opposite sign for positive charges. We look at three mesophases of hexabenzocoronene: herringbone, discotic, and columnar disordered. All results are compared to time resolved microwave conductivity data and show excellent agreement with no fitting parameters.

  8. The effects of degeneracy of the carrier ensemble on the energy loss rate and the high field mobility characteristics under the conditions of low lattice temperatures

    Science.gov (United States)

    Basu, A.; Das, B.; Middya, T. R.; Bhattacharya, D. P.

    2017-02-01

    The rate of loss of energy of the non-equilibrium electrons to the acoustic mode lattice vibration in a degenerate semiconductor is obtained under the condition, when the lattice temperature is low enough, so that the traditional approximations like the elastic nature of the electron-phonon collisions and the truncation of the phonon distribution to the equipartition law are not valid any more. Using the results of the energy loss rate, the non-ohmic mobility is then calculated. Evaluating the loss rate and the non-ohmic mobility in degenerate samples of Si and Ge we find that significant changes in both the characteristics have been effected compared to that in the non-degenerate samples, in the regime of lower energy and for relatively lower fields. The effected changes are more significant the lower the lattice temperature is.

  9. Glass transition dynamics and charge carrier mobility in conjugated polyfluorene thin films

    Science.gov (United States)

    Qin, Hui; Liu, Dan; Wang, Tao

    Conjugated polymers are commonly used in organic optoelectronic devices, e.g. organic photovoltaics (OPVs), light-emitting diodes (LEDs) and field effect transistors (FETs). In these devices, the conjugated polymers are prepared as thin films with thicknesses in the range of tens to hundreds of nanometers, and are interfaced with different function layers made from organic or inorganic materials. We have studied the glass transition temperature (Tg) of poly(9, 9-dioctylfluorene)-co-N-(1, 4-butylphenyl)diphenylamine) (TFB) thin films supported on different substrates, as well as their SCLC charge carrier mobility in photodiodes. Both Monotonic and non-monotonic Tg deviations are observed in TFB thin films supported on Si/SiOx and PEDOT:PSS, respectively. With low to moderate thermal crosslinking, the thickness dependent Tg deviation still exists, which diminishes in TFB films with a high crosslinking degree. The vertical charge carrier mobility of TFB thin films extracted from the SCLC measurements is found increase with film thickness, a value increases from 1 to 50 x 10-6 cm2 V-1 s-1 in the thickness range from 15 to 180 nm. Crosslinking was found to reduce the carrier mobility in TFB thin films. The Tg deviations are also discussed using the classic layered models in the literature. Our results provide a precise guide for the fabrication and design of high performance optoelectronic devices.

  10. Calculating charge-carrier mobilities in disordered semiconducting polymers: Mean field and beyond

    Science.gov (United States)

    Cottaar, J.; Bobbert, P. A.

    2006-09-01

    We model charge transport in disordered semiconducting polymers by hopping of charges on a regular cubic lattice of sites. A large on-site Coulomb repulsion prohibits double occupancy of the sites. Disorder is introduced by taking random site energies from a Gaussian distribution. Recently, it was demonstrated that this model leads to a dependence of the charge-carrier mobilities on the density of charge carriers that is in agreement with experimental observations. The model is conveniently solved within a mean-field approximation, in which the correlation between the occupational probabilities of different sites is neglected. This approximation becomes exact in the limit of vanishing charge-carrier densities, but needs to be checked at high densities. We perform this check by dividing the lattice in pairs of neighboring sites and taking into account the correlation between the sites within each pair explicitly. This pair approximation is expected to account for the most important corrections to the mean-field approximation. We study the effects of varying temperature, charge-carrier density, and electric field. We demonstrate that in the parameter regime relevant for semiconducting polymers used in practical devices the corrections to the mobilities calculated from the mean-field approximation will not exceed a few percent, so that this approximation can be safely used.

  11. Large Modulation of Charge Carrier Mobility in Doped Nanoporous Organic Transistors

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Fengjiao [Department of Chemical and Biomolecular Engineering, University of Illinois Urbana-Champaign, 600 S. Mathews Ave. Urbana IL 61801 USA; Dai, Xiaojuan [Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 P. R. China; Zhu, Weikun [Department of Chemical and Biomolecular Engineering, University of Illinois Urbana-Champaign, 600 S. Mathews Ave. Urbana IL 61801 USA; Chung, Hyunjoong [Department of Chemical and Biomolecular Engineering, University of Illinois Urbana-Champaign, 600 S. Mathews Ave. Urbana IL 61801 USA; Diao, Ying [Department of Chemical and Biomolecular Engineering, University of Illinois Urbana-Champaign, 600 S. Mathews Ave. Urbana IL 61801 USA

    2017-05-10

    Molecular doping of organic electronics has shown promise to sensitively modulate important device metrics. One critical challenge is the disruption of structure order upon doping of highly crystalline organic semiconductors, which significantly reduces the charge carrier mobility. This paper demonstrates a new method to achieve large modulation of charge carrier mobility via channel doping without disrupting the molecular ordering. Central to the method is the introduction of nanopores into the organic semiconductor thin films via a simple and robust templated meniscus-guided coating method. Using this method, the charge carrier mobility of C8-benzothieno[3,2-b]benzothiophene transistors is boosted by almost sevenfold. This paper further demonstrates enhanced electron transport by close to an order of magnitude in a diketopyrrolopyrrole-based donor–acceptor polymer. Combining spectroscopic measurements, density functional theory calculations, and electrical characterizations, the doping mechanism is identified as partial-charge-transfer induced trap filling. The nanopores serve to enhance the dopant/organic semiconductor charge transfer reaction by exposing the π-electrons to the pore wall.

  12. Accurate determination of minority carrier mobility in silicon from quasi-steady-state photoluminescence

    Science.gov (United States)

    Giesecke, J. A.; Schindler, F.; Bühler, M.; Schubert, M. C.; Warta, W.

    2013-06-01

    Minority carrier mobility is a crucial transport property affecting the performance of semiconductor devices such as solar cells. Compensation of dopant species and novel multicrystalline materials call for accurate knowledge of minority carrier mobility for device simulation and characterization. Yet, measurement techniques of minority carrier mobility are scarce, and published data scatter significantly even on monocrystalline material. In this paper, the determination of minority carrier mobility from self-consistent quasi-steady-state photoluminescence measurements of effective carrier lifetime is presented. The measurement design is distinguished by a limitation of carrier recombination through minority carrier transport—with excess carrier generation and recombination confined to opposite interfaces, respectively. Minority carrier mobility is inferred from the minority carrier diffusion coefficient via the Einstein relation. An experimental proof of concept on monocrystalline p-type material is provided, showing good agreement with state-of-the-art data and models. Considerations for the applicability of the method to compensated and multicrystalline silicon materials are discussed.

  13. Boost Up Carrier Mobility for Ferroelectric Organic Transistor Memory via Buffering Interfacial Polarization Fluctuation

    Science.gov (United States)

    Sun, Huabin; Wang, Qijing; Li, Yun; Lin, Yen-Fu; Wang, Yu; Yin, Yao; Xu, Yong; Liu, Chuan; Tsukagoshi, Kazuhito; Pan, Lijia; Wang, Xizhang; Hu, Zheng; Shi, Yi

    2014-11-01

    Ferroelectric organic field-effect transistors (Fe-OFETs) have been attractive for a variety of non-volatile memory device applications. One of the critical issues of Fe-OFETs is the improvement of carrier mobility in semiconducting channels. In this article, we propose a novel interfacial buffering method that inserts an ultrathin poly(methyl methacrylate) (PMMA) between ferroelectric polymer and organic semiconductor layers. A high field-effect mobility (μFET) up to 4.6 cm2 V-1 s-1 is obtained. Subsequently, the programming process in our Fe-OFETs is mainly dominated by the switching between two ferroelectric polarizations rather than by the mobility-determined charge accumulation at the channel. Thus, the ``reading'' and ``programming'' speeds are significantly improved. Investigations show that the polarization fluctuation at semiconductor/insulator interfaces, which affect the charge transport in conducting channels, can be suppressed effectively using our method.

  14. Minority-carrier mobility anomalies in low-resistivity silicon solar cells

    Science.gov (United States)

    Weizer, V. G.; Delombard, R.

    1986-01-01

    Measurement of the minority-carrier mobility in the base region of a high-voltage metal-insulator-N-P solar cell (Green et al., 1984), as well as in other 0.1-ohm cm cells, provides direct proof that the high voltages measured for that cell are due not only to improved emitter characteristics but to an improved base region as well. The base characteristics are shown to be quite sensitive to the effects of diffusion-induced lattice stress originating in the emitter. The implications of these findings for the fabrication of high-efficiency cells are discussed.

  15. MOSFET Carrier Surface Effective Mobility with Thin Gate-Oxide Thickness

    Institute of Scientific and Technical Information of China (English)

    ZHAOYang; PARKEStephen; CHUJiamei; BURKEFranklyn

    2005-01-01

    Mobility is a key parameter in MOSFET (Metal-oxide-semiconduetor field effect transistor) modeling. However, due to the influence of transverse electric field as a result of thin gate-oxide thickness in modern MOSFET, conventional carriers mobility of bulk device is no longer appropriate. In this paper the measurement of carrier surface effective mobility with thin gate-oxide of 40A thickness device is completed, and the modeling and characterization of this mobility is presented by employing BSIM model. Results show that our approach is effective to model surface mobility of thin gate-oxide device.

  16. Determination of carrier lifetime and mobility in colloidal quantum dot films via impedance spectroscopy

    Science.gov (United States)

    Rath, Arup K.; Lasanta, Tania; Bernechea, Maria; Diedenhofen, Silke L.; Konstantatos, Gerasimos

    2014-02-01

    Impedance Spectroscopy (IS) proves to be a powerful tool for the determination of carrier lifetime and majority carrier mobility in colloidal quantum dot films. We employ IS to determine the carrier lifetime in PbS quantum dot Schottky solar cells with Al and we verify the validity of the technique via transient photovoltage. We also present a simple approach based on an RC model that allows the determination of carrier mobility in PbS quantum dot films and we corroborate the results via comparison with space charge limited measurements. In summary, we demonstrate the potential of IS to characterize key-to-photovoltaics optoelectronic properties, carrier lifetime, and mobility, in a facile way.

  17. Unified Description of Charge-Carrier Mobilities in Disordered Semiconducting Polymers

    NARCIS (Netherlands)

    Pasveer, W.F.; Cottaar, J.; Tanase, C.; Coehoorn, R.; Bobbert, P.A.; Blom, P.W.M.; De Leeuw, D.M.; Michels, M.A.J.

    2005-01-01

    From a numerically exact solution of the Master equation for hoppingtransport in a disordered energy landscape with a Gaussian densityof states, we determine the dependence on temperature, carrier density, and electric field of the charge carrier mobility. Experimentalspace-charge limited currents i

  18. Unified description of charge-carrier mobilities in disordered semiconducting polymers

    NARCIS (Netherlands)

    Pasveer, WF; Cottaar, J; Tanase, C; Coehoorn, R; Bobbert, PA; Blom, PWM; de Leeuw, DM; Michels, MAJ

    2005-01-01

    From a numerical solution of the master equation for hopping transport in a disordered energy landscape with a Gaussian density of states, we determine the dependence of the charge-carrier mobility on temperature, carrier density, and electric field. Experimental current-voltage characteristics in d

  19. On the role of local charge carrier mobility in the charge separation mechanism of organic photovoltaics.

    Science.gov (United States)

    Yoshikawa, Saya; Saeki, Akinori; Saito, Masahiko; Osaka, Itaru; Seki, Shu

    2015-07-21

    Although the charge separation (CS) and transport processes that compete with geminate and non-geminate recombination are commonly regarded as the governing factors of organic photovoltaic (OPV) efficiency, the details of the CS mechanism remain largely unexplored. Here we provide a systematic investigation on the role of local charge carrier mobility in bulk heterojunction films of ten different low-bandgap polymers and polythiophene analogues blended with methanofullerene (PCBM). By correlating with the OPV performances, we demonstrated that the local mobility of the blend measured by time-resolved microwave conductivity is more important for the OPV output than those of the pure polymers. Furthermore, the results revealed two separate trends for crystalline and semi-crystalline polymers. This work offers guidance in the design of high-performance organic solar cells.

  20. Measuring the mobility of single crystalline wires and its dependence on temperature and carrier density

    Energy Technology Data Exchange (ETDEWEB)

    Amorim, Cleber A; Berengue, Olivia M; Kamimura, Hanay; Chiquito, Adenilson J [NanO LaB-Departamento de Fisica, Universidade Federal de Sao Carlos, CEP 13565-905, CP 676, Sao Carlos, Sao Paulo (Brazil); Leite, Edson R, E-mail: amorim@df.ufscar.br [Laboratorio Interdisciplinar de EletroquImica e Ceramicas, Departamento de Quimica, Universidade Federal de Sao Carlos, CEP 13565-905, CP 676, Sao Carlos, Sao Paulo (Brazil)

    2011-05-25

    Kinetic transport parameters are fundamental for the development of electronic nanodevices. We present new results for the temperature dependence of mobility and carrier density in single crystalline In{sub 2}O{sub 3} samples and the method of extraction of these parameters which can be extended to similar systems. The data were obtained using a conventional Hall geometry and were quantitatively described by the semiconductor transport theory characterizing the electron transport as being controlled by the variable range hopping mechanism. A comprehensive analysis is provided showing the contribution of ionized impurities (low temperatures) and acoustic phonon (high temperatures) scattering mechanisms to the electron mobility. The approach presented here avoids common errors in kinetic parameter extraction from field effect data, serving as a versatile platform for direct investigation of any nanoscale electronic materials.

  1. Carrier mobility in mesoscale heterogeneous organic materials: Effects of crystallinity and anisotropy on efficient charge transport

    Science.gov (United States)

    Kobayashi, Hajime; Shirasawa, Raku; Nakamoto, Mitsunori; Hattori, Shinnosuke; Tomiya, Shigetaka

    2017-07-01

    Charge transport in the mesoscale bulk heterojunctions (BHJs) of organic photovoltaic devices (OPVs) is studied using multiscale simulations in combination with molecular dynamics, the density functional theory, the molecular-level kinetic Monte Carlo (kMC) method, and the coarse-grained kMC method, which was developed to estimate mesoscale carrier mobility. The effects of the degree of crystallinity and the anisotropy of the conductivity of donors on hole mobility are studied for BHJ structures that consist of crystalline and amorphous pentacene grains that act as donors and amorphous C60 grains that act as acceptors. We find that the hole mobility varies dramatically with the degree of crystallinity of pentacene because it is largely restricted by a low-mobility amorphous region that occurs in the hole transport network. It was also found that the percolation threshold of crystalline pentacene is relatively high at approximately 0.6. This high percolation threshold is attributed to the 2D-like conductivity of crystalline pentacene, and the threshold is greatly improved to a value of approximately 0.3 using 3D-like conductive donors. We propose essential guidelines to show that it is critical to increase the degree of crystallinity and develop 3D conductive donors for efficient hole transport through percolative networks in the BHJs of OPVs.

  2. Increase in the mobility of photogenerated positive charge carriers in polythiophene.

    Science.gov (United States)

    Saeki, Akinori; Seki, Shu; Koizumi, Yoshiko; Sunagawa, Takeyoshi; Ushida, Kiminori; Tagawa, Seiichi

    2005-05-26

    We report the increase in the mobility of charge carriers in regioregular poly 3-hexyl thiophene (RR-P3HT) films by mixing them with tetracyanoethylene (TCNE), which is examined by in situ time-resolved microwave conductivity (TRMC) and transient optical spectroscopy (TOS). TCNE acts not only as an electron acceptor which increases the number of charge carriers on photoexposure but also as a functional additive which enhances the mobility of the charge carriers. This conclusion was deduced from the results of fluorescence quenching, transient optical absorption and photobleaching, and comparison of the TRMC signal with the TOS signal. The combination of the TRMC and TOS techniques represents a comprehensive and fully experimental approach to the determination of the intrinsic carrier mobility in conjugated polymers.

  3. Charge-carrier concentration dependence of the hopping mobility in organic materials with Gaussian disorder

    Science.gov (United States)

    Coehoorn, R.; Pasveer, W. F.; Bobbert, P. A.; Michels, M. A. J.

    2005-10-01

    It has recently been demonstrated that the hopping mobility in semiconducting organic materials depends on the charge-carrier concentration. We have analyzed this effect within the framework of six existing semianalytical models, for the case of a Gaussian density of states (DOS). These models were either not applied earlier to the case of a Gaussian DOS, or are shown to require a major modification. The mobility is constant below a certain concentration, which decreases with increasing ratio ŝ of the width of the DOS over the thermal energy kBT , and it increases for larger concentrations. At very high concentrations final state effects limit this increase or even give rise to a decrease. An analytical expression is given for the mobility, μ , in the form of the product of the mobility in the low concentration limit times a concentration (c) and ŝ -dependent enhancement factor. Depending on c , ln(μ) varies approximately linearly with 1/T or with 1/T2 . This finding may lead to a solution for the long-standing controversy between polaron-based and disorder-based hopping models.

  4. Enhanced carrier mobility of multilayer MoS2 thin-film transistors by Al2O3 encapsulation

    Science.gov (United States)

    Kim, Seong Yeoul; Park, Seonyoung; Choi, Woong

    2016-10-01

    We report the effect of Al2O3 encapsulation on the carrier mobility and contact resistance of multilayer MoS2 thin-film transistors by statistically investigating 70 devices with SiO2 bottom-gate dielectric. After Al2O3 encapsulation by atomic layer deposition, calculation based on Y-function method indicates that the enhancement of carrier mobility from 24.3 cm2 V-1 s-1 to 41.2 cm2 V-1 s-1 occurs independently from the reduction of contact resistance from 276 kΩ.μm to 118 kΩ.μm. Furthermore, contrary to the previous literature, we observe a negligible effect of thermal annealing on contact resistance and carrier mobility during the atomic layer deposition of Al2O3. These results demonstrate that Al2O3 encapsulation is a useful method of improving the carrier mobility of multilayer MoS2 transistors, providing important implications on the application of MoS2 and other two-dimensional materials into high-performance transistors.

  5. Influence of Dielectric Surface Chemistry on the Microstructure and Carrier Mobility of an n-Type Organic Semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Dhagat, P.; Haverinen, H; Klein, J; Jung, Y; Fischer, D; Delongchamp, D; Jabbour, G

    2009-01-01

    This paper examines the microstructure evolution of 3,4,9,10-perylene-tetracarboxylic bis-benzimidazole (PTCBI) thin films resulting from conditions imposed during film deposition. Modification of the silicon dioxide interface with a hydrophobic monolayer (octadecyltrichlorosilane (OTS-18)) alters the PTCBI growth habit by changing the unit cell contact plane. PTCBI films deposited on oxide surface have an orientation of (011), while films atop OTS-treated oxide surface have a preferred orientation of (001). The quality of the self assembled monolayer does not appear to influence the PTCBI growth preference significantly yet it enhances the carrier mobility, suggesting that charge traps are adequately passivated due to uniform monolayer coverage. High-quality monolayers result in n-type carrier mobility values of 0.05 cm2V-1s-1 Increasing the substrate temperature during PTCBI film deposition correlates with an increase in mobility that is most significant for films deposited on OTS-treated surface.

  6. Impact of the intermixed phase and the channel network on the carrier mobility of nanostructured solar cells.

    Science.gov (United States)

    Woellner, Cristiano F; Freire, José A

    2016-02-28

    We analyzed the impact of the complex channel network of donor and acceptor domains in nanostructured solar cells on the mobility of the charge carriers moving by thermally activated hopping. Particular attention was given to the so called intermixed phase, or interface roughness, that has recently been shown to promote an increase in the cell efficiency. The domains were obtained from a Monte Carlo simulation of a two-species lattice gas. We generated domain morphologies with controllable channel size and interface roughness. The field and density dependence of the carrier hopping mobility in different morphologies was obtained by solving a master equation. Our results show that the mobility decreases with roughness and increases with typical channel sizes. The deleterious effect of the roughness on the mobility is quite dramatic at low carrier densities and high fields. The complex channel network is shown to be directly responsible for two potentially harmful effects to the cell performance: a remarkable decrease of the mobility with increasing field and the accumulation of charge at the domains interface, which leads to recombination losses.

  7. Mobility enhancements for LTE-Advanced Multilayer Networks with Inter-Site Carrier Aggregation

    DEFF Research Database (Denmark)

    Pedersen, Klaus I.; Michaelsen, Per Henrik; Rosa, Claudio

    2013-01-01

    , while using inter-site carrier aggregation, is hereafter studied. Hybrid Het- Net mobility solutions for such cases are derived, where macrocell mobility is network controlled, while small-cell mobility is made UEautonomous. The proposed scheme is characterized by having the UE devices autonomously......In this article we first summarize some of the most recent HetNet mobility studies for LTE-Advanced, and use these to highlight the challenges that should be further addressed in theresearch community. A state-of-the-art HetNet scenario with macros and small cells deployed on different carriers......, and reduces the signaling overhead compared to known network controlled mobility solutions. Results from extensive dynamic system-level simulations are presented to demonstrate the advantages of the proposed technique, showing significant savings in signaling overhead....

  8. Carrier mobility of highly transparent conductive Al-doped ZnO polycrystalline films deposited by radio-frequency, direct-current, and radio-frequency-superimposed direct-current magnetron sputtering: Grain boundary effect and scattering in the grain bulk

    Science.gov (United States)

    Nomoto, Junichi; Makino, Hisao; Yamamoto, Tetsuya

    2015-01-01

    The effects of using radio-frequency (RF)-superimposed direct-current (DC) magnetron sputtering deposition on the structural, electrical, and optical properties of aluminum-doped ZnO (AZO)-based highly transparent conducting oxide films have been examined. AZO films were deposited on heated non-alkaline glass substrates (200 °C) using ZnO:Al2O3 (2 wt. % Al2O3) ceramic oxide targets with the total power varied from 150 to 300 W, and at various RF to DC power ratios, AZO films deposited by a mixed approach with the RF to the total power ratio of 0.14 showed the lowest resistivity of 2.47 × 10-4 Ω cm with the highest carrier concentration of 6.88 × 1020 cm-3 and the highest Hall mobility (μH) of 36.8 cm2/Vs together with the maximum value of an average transmittance in the visible spectral range from 400 to 700 nm. From the analysis of optical data based on the simple Drude model combined with the Tauc-Lorentz model and the results of Hall effect measurements, the optical mobility (μopt) was determined. A comparison of μopt with μH clarified the effects of the mixed approach not only on the reduction of the grain boundary contribution to the carrier transport but also on retaining high carrier mobility of in-grains for the AZO films.

  9. Theoretical investigation of the phonon-limited carrier mobility in (001) Si films

    Science.gov (United States)

    Li, Jing; Lampin, Evelyne; Delerue, Christophe; Niquet, Yann-Michel

    2016-11-01

    We calculate the phonon-limited carrier mobility in (001) Si films with a fully atomistic framework based on a tight-binding (TB) model for the electronic structure, a valence-force-field model for the phonons, and the Boltzmann transport equation. This framework reproduces the electron and phonon bands over the whole first Brillouin zone and accounts for all possible carrier-phonon scattering processes. It can also handle one-dimensional (wires) and three-dimensional (bulk) structures and therefore provides a consistent description of the effects of dimensionality on the phonon-limited mobilities. We first discuss the dependence of the electron and hole mobilities on the film thickness and carrier density. The mobility tends to decrease with decreasing film thickness and increasing carrier density, as the structural and electric confinement enhances the electron-phonon interactions. We then compare hydrogen-passivated and oxidized films in order to understand the impact of surface passivation on the mobility and discuss the transition from nanowires to films and bulk. Finally, we compare the semi-classical TB mobilities with quantum Non-Equilibrium Green's Function calculations based on k ṡ p band structures and on deformation potentials for the electron-phonon interactions (KP-NEGF). The TB mobilities show a stronger dependence on carrier density than the KP-NEGF mobilities, yet weaker than the experimental data on Fully Depleted-Silicon-on-Insulator devices. We discuss the implications of these results on the nature of the apparent increase of the electron-phonon deformation potentials in silicon thin films.

  10. Mobility Analysis for Inter-Site Carrier Aggregation in LTE Heterogeneous Networks

    DEFF Research Database (Denmark)

    Barbera, Simone; Pedersen, Klaus I.; Michaelsen, Per Henrik

    2013-01-01

    . It is shown that not only does the use of inter-site carrier aggregation offer higher end-user throughput, but also several benefits in terms of improved mobility performance. Among others, it is shown that the performance becomes less sensitive to the setting of mobility parameters when inter-site carrier...... aggregation is used, while still keeping the handover signaling burden at an acceptable level. The probabilities of radio link failures, handover failures, and unnecessary handovers (also known as ping-pongs) are kept at a minimum for proposed the solution....

  11. Charge carrier density dependence of the hole mobility in poly(p-phenylene vinylene)

    OpenAIRE

    Tanase, C; Blom, PWM; De Leeuw, DM; de Meijer, EJ

    2004-01-01

    The hole transport in various poly(p-phenylene vinylene) (PPV) derivatives has been investigated in field-effect transistors (FETs) and light-emitting diodes (LEDs) as a function of temperature and applied bias. The discrepancy between the experimental hole mobilities extracted from FETs and LEDs based on a single disordered polymeric semiconductor originates from the strong dependence of the hole mobility on the charge carrier density. The microscopic charge transport parameters are directly...

  12. Determination of charge carrier mobility in doped low density polyethylene using DC transients

    DEFF Research Database (Denmark)

    Khalil, M.Salah; Henk, Peter O; Henriksen, Mogens

    1989-01-01

    Charge carrier mobility was determined for plain and doped low-density polyethylene (LDPE) using DC transient currents. Barium titanate was used as a strongly polar dopant and titanium dioxide as a semiconductor dopant. The values of the mobility obtained were on the order of 10-10 cm2 v-1 s-1...... by a factor of five. Charge trapping and space charge formation were modified by the introduction of titanium dioxide...

  13. Intrinsic carrier mobility extraction based on a new quasi-analytical model for graphene field-effect transistors

    Science.gov (United States)

    Wang, Shaoqing; Jin, Zhi; Muhammad, Asif; Peng, Songang; Huang, Xinnan; Zhang, Dayong; Shi, Jingyuan

    2016-10-01

    The most common method of mobility extraction for graphene field-effect transistors is proposed by Kim. Kim’s method assumes a constant mobility independent of carrier density and gets the mobility by fitting the transfer curves. However, carrier mobility changes with the carrier density, leading to the inaccuracy of Kim’s method. In our paper, a new and more accurate method is proposed to extract mobility by fitting the output curves at a constant gate voltage. The output curves are fitted using several kinds of current-voltage models. Besides the models in the literature, we present a modified model, which takes into account not only the quantum capacitance, contact resistance, but also a modified drift velocity-field relationship. Comparing with the other models, this new model can fit better with our experimental data. The dependence of carrier intrinsic mobility on carrier density is obtained based on this model.

  14. Rashba Effect and Carrier Mobility in Hybrid Organic-Inorganic Perovskites.

    Science.gov (United States)

    Yu, Zhi-Gang

    2016-08-18

    The outstanding photovoltaic performance in hybrid organic-inorganic perovskites (HOIPs) relies on their desirable carrier transport properties. In the HOIPs, strong spin-orbit coupling (SOC) and structural inversion asymmetry give rise to a giant spin splitting in the conduction and valence bands, that is, the Rashba effect (RE), a subject intensively studied in spintronics. Here we show that this giant RE can manifest itself in charge transport and is the key to understanding carrier mobility and its temperature dependence in the HOIPs. The RE greatly enhances acoustic-phonon scattering (APS) and alters the temperature dependence of carrier mobility from T(-3/2) to T(-1). Meanwhile, it reduces polar-optical phonon scattering (POPS). In CH3NH3PbI3, the carrier mobility is limited by the APS for temperatures up to 100 K, above which the POPS becomes dominant. The effective polar coupling is moderate, α = 1.1, indicating that band conduction is still a valid description of charge transport. Our results account for the observed carrier transport behaviors over the entire temperature range and highlight the importance of SOC in charge transport in the HOIPs.

  15. Increased carrier mobility in end-functionalized oligosilanes.

    Science.gov (United States)

    Surampudi, S; Yeh, M-L; Siegler, M A; Hardigree, J F Martinez; Kasl, T A; Katz, H E; Klausen, R S

    2015-03-01

    We show that a class of oligosilane-arene σ, π-hybrid materials exhibits distinct and enhanced solid-state electronic properties relative to its parent components. In the single crystal structure, the σ-conjugation axis of one molecule points towards the π-face of a neighboring molecule due to an unusual gauche conformation. This organization is hypothesized to be beneficial for charge transport. We show that solution-deposited crystalline films of the hybrid materials show up to a 100-fold increase in space-charge limited current (SCLC) mobility relative to literature reports of photoinduced hole transport in oligosilane films. The discovery that σ, π-hybrids are more than the sum of their parts offers a design opportunity for new materials.

  16. Ab initio charge-carrier mobility model for amorphous molecular semiconductors

    Science.gov (United States)

    Massé, Andrea; Friederich, Pascal; Symalla, Franz; Liu, Feilong; Nitsche, Robert; Coehoorn, Reinder; Wenzel, Wolfgang; Bobbert, Peter A.

    2016-05-01

    Accurate charge-carrier mobility models of amorphous organic molecular semiconductors are essential to describe the electrical properties of devices based on these materials. The disordered nature of these semiconductors leads to percolative charge transport with a large characteristic length scale, posing a challenge to the development of such models from ab initio simulations. Here, we develop an ab initio mobility model using a four-step procedure. First, the amorphous morphology together with its energy disorder and intermolecular charge-transfer integrals are obtained from ab initio simulations in a small box. Next, the ab initio information is used to set up a stochastic model for the morphology and transfer integrals. This stochastic model is then employed to generate a large simulation box with modeled morphology and transfer integrals, which can fully capture the percolative charge transport. Finally, the charge-carrier mobility in this simulation box is calculated by solving a master equation, yielding a mobility function depending on temperature, carrier concentration, and electric field. We demonstrate the procedure for hole transport in two important molecular semiconductors, α -NPD and TCTA. In contrast to a previous study, we conclude that spatial correlations in the energy disorder are unimportant for α -NPD. We apply our mobility model to two types of hole-only α -NPD devices and find that the experimental temperature-dependent current density-voltage characteristics of all devices can be well described by only slightly decreasing the simulated energy disorder strength.

  17. Analytical model of carrier mobility in a Polymer Field Effect Transistor

    Directory of Open Access Journals (Sweden)

    Milošević Milan M.

    2007-01-01

    Full Text Available In this paper, the carrier mobility analytical model in a POFET (Polymer Field Effect Transistor channel is proposed. The model was developed on the basis of existing models and experimental results. The proposed model is universal because it encompasses the carrier mobility dependence on temperature, electric field and trap density in the POFET channel. The model is comparatively simple, easy for application and gives valuable results. According to the presented model, simulations of mobility as a function of the parameters of interest were performed. The obtained results are shown graphically. In comparison to accessible experimental results excellent correspondence was found. This model enables the calculation of simple POFET current-voltage I (V characteristics.

  18. A Carrier Bag Story of Food, Mobilities and the Sharing Economy

    DEFF Research Database (Denmark)

    Fjalland, Emmy Laura Perez

    2018-01-01

    between food, mobilities and sharing. The poultry farm works within the principles of the sharing economy, where hens are fed with natural feed, such as waste feed from the restaurants that purchase the eggs, and other collaborators. By thinking of the carrier bag as an ancient artefact, this article...... brings together food, mobilities, and sharing, and shows the transformative gestures of ethical food. The article seeks to draw us into a deeper understanding of reparative and alternative futures, by examining the sharing economy as a carrier bag term in relation to food and mobilities. This allow us...... to see the sharing that goes on beyond the capitalist and neoliberal sharing economy, and, in this sense, these acts of the sharing economy seek to resituate humans within the ecological system, and enable humans to respond to environmental change....

  19. Variability of bandgap and carrier mobility caused by edge defects in ultra-narrow graphene nanoribbons

    Science.gov (United States)

    Poljak, M.; Wang, K. L.; Suligoj, T.

    2015-06-01

    We report the results of multi-scale modeling of ultra-narrow graphene nanoribbons (GNRs) that combines atomistic non-equilibrium Green's function (NEGF) approach with semiclassical mobility modeling. The variability of the transport gap and carrier mobility caused by random edge defects is analyzed. We find that the variability increases as the GNR width is downscaled and that even the minimum variation of the total mobility reaches more than 100% compared to average mobility in edge-defected nanoribbons. It is shown that scattering by optical phonons exhibits significantly more variability than the acoustic, line-edge roughness and Coulomb scattering mechanisms. The simulation results demonstrate that sub-5 nm-wide nanoribbons offer no improvement over conventional bulk semiconductors, however, GNRs are comparable with sub-7 nm-thick silicon-on-insulator devices in terms of mobility-bandgap trade-off characteristics.

  20. Effects of contact resistance on the evaluation of charge carrier mobilities and transport parameters in amorphous zinc tin oxide thin-film transistors

    Science.gov (United States)

    Schulz, Leander; Yun, Eui-Jung; Dodabalapur, Ananth

    2014-06-01

    Accurate determination of the charge transport characteristics of amorphous metal-oxide transistors requires the mitigation of the effects of contact resistance. The use of additional electrodes as voltage probes can overcome contact resistance-related limitations and yields accurate charge carrier mobility values, trap depths and temperature and carrier density dependencies of mobility as well as trap depths. We show that large differences in measured charge carrier mobility values are obtained when such contact resistances are not factored out. Upon exclusion of the contact resistance, the true temperature dependence of charge carrier mobility appears in the form of two clearly distinct mobility regimes. Analyzing these revealed mobility regions leads to a more accurate determination of the underlying transport physics, which shows that contact resistance-related artefacts yield incorrect trends of trap depth with gate voltage, potentially leading to a misconstruction of the charge transport picture. Furthermore, a comparison of low- and high-mobility samples indicates that the observed effects are more general.

  1. High capacity carrier ethernet transport networks

    DEFF Research Database (Denmark)

    Rasmussen, Anders; Zhang, Jiang; Yu, Hao

    2009-01-01

    Ethernet as a transport technology has, up to now, lacked the features such as network layer architecture, customer separation and manageability that carriers require for wide-scale deployment. However, with the advent of PBB-TE and T-MPLS, it is now possible to use Ethernet as a transport...... technology, making the use of Ethernet as a convergence layer for Next Generation Networks a distinct possibility. Triple Play services, in particular IPTV, are expected to be a main drivers for carrier Ethernet, however, a number of challenges must be addressed including QoS enabled control plane, enhanced...... OAM functions, survivability and the increased bandwidth requirements of carrier class systems. This article provides an overview of PBB-TE and T-MPLS and demonstrates how IPTV services can be realized in the framework of Carrier Ethernet. In addition we provide a case study on performing bit error...

  2. High capacity carrier ethernet transport networks

    DEFF Research Database (Denmark)

    Rasmussen, Anders; Zhang, Jiang; Yu, Hao;

    2009-01-01

    Ethernet as a transport technology has, up to now, lacked the features such as network layer architecture, customer separation and manageability that carriers require for wide-scale deployment. However, with the advent of PBB-TE and T-MPLS, it is now possible to use Ethernet as a transport...... technology, making the use of Ethernet as a convergence layer for Next Generation Networks a distinct possibility. Triple Play services, in particular IPTV, are expected to be a main drivers for carrier Ethernet, however, a number of challenges must be addressed including QoS enabled control plane, enhanced...... OAM functions, survivability and the increased bandwidth requirements of carrier class systems. This article provides an overview of PBB-TE and T-MPLS and demonstrates how IPTV services can be realized in the framework of Carrier Ethernet. In addition we provide a case study on performing bit error...

  3. Analysis of carrier concentration, lifetime, and electron mobility on p-type HgCdTe

    Science.gov (United States)

    Yoo, Sang Dong; Kwack, Kae Dal

    1998-03-01

    Minority carrier transport characteristics of vacancy-doped p-type HgCdTe such as carrier concentration, lifetime, and mobility are investigated. In the calculation of the carrier concentration two acceptor levels—a donor level and a trap level—were taken into account. The acceptor levels have been described by two models—two independent singly ionized levels and a divalent level with two ionization energies. When each model was examined by calculating electron mobility as a function of temperature, the latter was found to be more accurate. Electron mobility as a function of majority carrier concentration was also presented for both n-type and p-type HgCdTe with 0.225 Cd mole fraction. Steady state electron lifetime was computed assuming the acceptor levels and the trap level would act as Schokley-Read-Hall type recombination centers. The calculated results using the divalent acceptor model were in good agreement with the experimental data.

  4. Research of carrier mobility in NPD through negative differential susceptance spectra

    Science.gov (United States)

    Xu, Hui; Tang, Chao; Zhai, Wen-Juan; Liu, Rui-Lan; Rong, Zhou; Fan, Qu-Li; Huang, Wei

    2014-12-01

    In this paper, the hole carrier mobility of organic semiconductor N,N'-diphenyl-N,N'bis(1,1'-biphenyl)-4,4'-diamine (NPD) was researched by negative differential susceptance spectra (-ΔB = -w(C - Cgeo) ~ f). Under the condition of space charge limited current (SCLC), through solving the drift current equation and Poisson equation and simulating the spectra -ΔB = -w(C - Cgeo) ~ f, the relationship between the peak of -ΔB = -w(C - Cgeo) ~ f spectra (1/ƒp = τp) and the transfer time of carrier (τdc) could be achieved to be τdc = k × τp. So the hole-only device of ITO/NPD/Ag was fabricated to determine the capacitance spectra, and through which its -ΔB = -w(C - Cgeo) ~ f could be plotted. According to the relationship of τdc = k × τp, where k was determined to be 0.56, the transfer time and further the carrier mobility could be obtained. The carrier mobility depended on the electric field according to Poole-Frenkel model was further investigated in this report.

  5. Electronic properties and carrier mobilities of 6,6,12-graphyne nanoribbons

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Heyu; Huang, Yuanhe, E-mail: yuanhe@bnu.edu.cn [College of Chemistry, Beijing Normal University, Beijing, 100875 (China); Bai, Hongcun [Key Laboratory of Energy Sources and Chemical Engineering, Ningxia University, Yinchuan, Ningxia 750021 (China)

    2015-07-15

    Structures, stabilities, electronic properties and carrier mobilities of 6,6,12-graphyne nanoribbons (GyNRs) with armchair and zigzag edges are investigated using the self-consistent field crystal orbital method based on density functional theory. It is found that the 1D GyNRs are more stable than the 2D 6,6,12-graphyne sheet in the view of the Gibbs free energy. The stabilities of these GyNRs decrease as their widths increase. The calculated band structures show that all these GyNRs are semiconductors and that dependence of band gaps on the ribbon width is different from different types of the GyNRs. The carrier mobility was calculated based on the deformation theory and effective mass approach. It is found that the carrier mobilities of these GyNRs can reach the order of 10{sup 5} cm{sup 2} V {sup –1}s{sup –1} at room temperature and are comparable to those of graphene NRs. Moreover, change of the mobilities with change of the ribbon width is quite different from different types of the GyNRs.

  6. Electronic properties and carrier mobilities of 6,6,12-graphyne nanoribbons

    Directory of Open Access Journals (Sweden)

    Heyu Ding

    2015-07-01

    Full Text Available Structures, stabilities, electronic properties and carrier mobilities of 6,6,12-graphyne nanoribbons (GyNRs with armchair and zigzag edges are investigated using the self-consistent field crystal orbital method based on density functional theory. It is found that the 1D GyNRs are more stable than the 2D 6,6,12-graphyne sheet in the view of the Gibbs free energy. The stabilities of these GyNRs decrease as their widths increase. The calculated band structures show that all these GyNRs are semiconductors and that dependence of band gaps on the ribbon width is different from different types of the GyNRs. The carrier mobility was calculated based on the deformation theory and effective mass approach. It is found that the carrier mobilities of these GyNRs can reach the order of 105 cm2 V –1s–1 at room temperature and are comparable to those of graphene NRs. Moreover, change of the mobilities with change of the ribbon width is quite different from different types of the GyNRs.

  7. 14 CFR 382.125 - What procedures do carriers follow when wheelchairs, other mobility aids, and other assistive...

    Science.gov (United States)

    2010-01-01

    ... wheelchairs, other mobility aids, and other assistive devices must be stowed in the cargo compartment? 382.125... Wheelchairs, Other Mobility Aids, and Other Assistive Devices § 382.125 What procedures do carriers follow when wheelchairs, other mobility aids, and other assistive devices must be stowed in the...

  8. Measurement of the Charge Carrier Mobility in MEH-PPV and MEH-PPV-POSS Organic Semiconductor Films

    Science.gov (United States)

    Romanov, I. V.; Voitsekhovskii, A. V.; Dyagterenko, K. M.; Kopylova, T. N.; Kokhanenko, A. P.; Nikonova, E. N.

    2015-03-01

    The values of the charge carrier mobility in organic semiconductor materials (MEH-PPV, MEH-PPV-POSS) are obtained on the basis of an analysis of the relaxation curves of transient electroluminescence in organic light-emitting diodes (OLEDs). The data on the mobility of charge carriers are analyzed according to the Poole-Frenkel model using the dependences of the charge carrier mobility on the electric field. Physical interpretation of the transport phenomena in OLED structures based on MEH-PPV and MEH-PPV-POSS is given.

  9. Structure, ionic conductivity and mobile carrier density in fast ionic conducting chalcogenide glasses

    Energy Technology Data Exchange (ETDEWEB)

    Yao, Wenlong [Iowa State Univ., Ames, IA (United States)

    2006-01-01

    This thesis consists of six sections. The first section gives the basic research background on the ionic conduction mechanism in glass, polarization in the glass, and the method of determining the mobile carrier density in glass. The proposed work is also included in this section. The second section is a paper that characterizes the structure of MI + M2S + (0.1 Ga2S3 + 0.9 GeS2) (M = Li, Na, K and Cs) glasses using Raman and IR spectroscopy. Since the ionic radius plays an important role in determining the ionic conductivity in glasses, the glass forming range for the addition of different alkalis into the basic glass forming system 0.1 Ga2S3 + 0.9 GeS2 was studied. The study found that the change of the alkali radius for the same nominal composition causes significant structure change to the glasses. The third section is a paper that investigates the ionic conductivity of MI + M2S + (0.1Ga2S3 + 0.9 GeS2) (M = Li, Na, K and Cs) glasses system. Corresponding to the compositional changes in these fast ionic conducting glasses, the ionic conductivity shows changes due to the induced structural changes. The ionic radius effect on the ionic conductivity in these glasses was investigated. The fourth section is a paper that examines the mobile carrier density based upon the measurements of space charge polarization. For the first time, the charge carrier number density in fast ionic conducting chalcogenide glasses was determined. The experimental impedance data were fitted using equivalent circuits and the obtained parameters were used to determine the mobile carrier density. The influence of mobile carrier density and mobility on the ionic conductivity was separated. The fifth section is a paper that studies the structures of low-alkali-content Na2S + B2S3 (x ≤ 0.2) glasses by neutron and synchrotron x-ray diffraction

  10. MODELLING OF CHARGE CARRIER MOBILITY FOR TRANSPORT BETWEEN ELASTIC POLYACETYLENE-LIKE POLYMER NANORODS

    Directory of Open Access Journals (Sweden)

    M. Mensik

    2017-03-01

    Full Text Available A quantum model solving the charge carrier mobility between polyacetylene-like polymer nanorods is presented. The model assumes: a Quantum mechanical calculation of hole on-chain delocalization involving electron-phonon coupling leading to the Peierls instability, b Hybridization coupling between the polymer backbone and side-groups (or environmental states, which act as hole traps, and c Semiclassical description of the inter-chain hole transfer in an applied voltage based on Marcus theory. We have found that mobility resonantly depends on the hybridization coupling between polymer and linked groups. We observed also non-trivial mobility dependences on the difference of energies of the highest occupied molecular orbitals localized on the polymer backbone and side-groups, respectively, and hole concentration. Those findings are important for optimization of hybrid opto-electronic devices.

  11. Tuning carrier mobility without spin transport degrading in copper-phthalocyanine

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, S. W.; Wang, P.; Chen, B. B.; Zhou, Y. [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, 22 Hankou Road, Nanjing 210093 (China); Ding, H. F., E-mail: hfding@nju.edu.cn, E-mail: dwu@nju.edu.cn; Wu, D., E-mail: hfding@nju.edu.cn, E-mail: dwu@nju.edu.cn [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, 22 Hankou Road, Nanjing 210093 (China); Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 22 Hankou Road, Nanjing 210093 (China)

    2015-07-27

    We demonstrate more than one order of magnitude of carrier mobility tuning for the copper-phthalocyanine (CuPc) without spin transport degrading in organic spin valve devices. Depending on the preparation conditions, organic spin valves with the CuPc film mobility of 5.78 × 10{sup −3} and 1.11 × 10{sup −4} cm{sup 2}/V s are obtained for polycrystalline and amorphous CuPc, respectively. Strikingly, the spin diffusion lengths are almost the same regardless of their mobilities that are ∼50 times different, which is in sharp contrast with previous prediction. These findings directly support that the spin relaxation in CuPc is dominated by the spin-orbit coupling.

  12. Charge carrier mobility and electronic properties of Al(Op3: impact of excimer formation

    Directory of Open Access Journals (Sweden)

    Andrea Magri

    2015-05-01

    Full Text Available We have studied the electronic properties and the charge carrier mobility of the organic semiconductor tris(1-oxo-1H-phenalen-9-olatealuminium(III (Al(Op3 both experimentally and theoretically. We experimentally estimated the HOMO and LUMO energy levels to be −5.93 and −3.26 eV, respectively, which were close to the corresponding calculated values. Al(Op3 was successfully evaporated onto quartz substrates and was clearly identified in the absorption spectra of both the solution and the thin film. A structured steady state fluorescence emission was detected in solution, whereas a broad, red-shifted emission was observed in the thin film. This indicates the formation of excimers in the solid state, which is crucial for the transport properties. The incorporation of Al(Op3 into organic thin film transistors (TFTs was performed in order to measure the charge carrier mobility. The experimental setup detected no electron mobility, while a hole mobility between 0.6 × 10−6 and 2.1 × 10−6 cm2·V−1·s−1 was measured. Theoretical simulations, on the other hand, predicted an electron mobility of 9.5 × 10−6 cm2·V−1·s−1 and a hole mobility of 1.4 × 10−4 cm2·V−1·s−1. The theoretical simulation for the hole mobility predicted an approximately one order of magnitude higher hole mobility than was observed in the experiment, which is considered to be in good agreement. The result for the electron mobility was, on the other hand, unexpected, as both the calculated electron mobility and chemical common sense (based on the capability of extended aromatic structures to efficiently accept and delocalize additional electrons suggest more robust electron charge transport properties. This discrepancy is explained by the excimer formation, whose inclusion in the multiscale simulation workflow is expected to bring the theoretical simulation and experiment into agreement.

  13. High mobility epitaxial graphene devices via aqueous-ozone processing

    Science.gov (United States)

    Yager, Tom; Webb, Matthew J.; Grennberg, Helena; Yakimova, Rositsa; Lara-Avila, Samuel; Kubatkin, Sergey

    2015-02-01

    We find that monolayer epitaxial graphene devices exposed to aggressive aqueous-ozone processing and annealing became cleaner from post-fabrication organic resist residuals and, significantly, maintain their high carrier mobility. Additionally, we observe a decrease in carrier density from inherent strong n-type doping to extremely low p-type doping after processing. This transition is explained to be a consequence of the cleaning effect of aqueous-ozone processing and annealing, since the observed removal of resist residuals from SiC/G enables the exposure of the bare graphene to dopants present in ambient conditions. The resulting combination of charge neutrality, high mobility, large area clean surfaces, and susceptibility to environmental species suggest this processed graphene system as an ideal candidate for gas sensing applications.

  14. The achievement of sustainable mobility requires the co-existence of numerous energy carriers

    Energy Technology Data Exchange (ETDEWEB)

    Gilpin, Geoffrey; Holden, Erling

    2010-07-01

    Full text: Recent discussions concerning the decarbonisation of the transport sector facilitated by a transition from fossil fuel based transport to a more environmentally benign form of sustainable mobility tend to oversimplify the situation by suggesting a hierarchical evolution of alternative transport fuels. This is highlighted by the linear segregation of biofuel research and development into generations, now standing at current 1st generation-, through to proposed 4th generation biofuels, and with the assumption that hydrogen and electric based modes of transportation will eventually exclude, or greatly minimize, the need for other alternatives in the future. This view of the evolution of future transport fuels is counterproductive to the philosophy of industrial ecology, and its overlying goal of achieving sustainability. Through a review of relevant literature resources the field of industrial ecology and the concept of sustainable mobility is discussed. The criteria by which the sustainability of proposed alternative energy carriers is presented, and the application and validity of developed life-cycle-assessment methodology is reviewed, and argued for as the best available means by which to evaluate existing and proposed energy carriers. A brief review is then presented for the potential of, and limiting factors to current and proposed alternative transport fuels, and thereby clarifies the necessity of adopting a more relaxed view towards the future of sustainable transport fuels. The term 'fuel mosaic' is introduced to describe this future scenario in which fossil fuels co-exist alongside hydrogen, electricity, and biofuels as energy carriers. The variety of energy carriers is required by the presence of varied transport applications, technologies, and their limited factors of production. With this knowledge and the lack of realistic alternative technologies or modes of transportation, and coupled with the expected increase in demand for these

  15. Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating

    Science.gov (United States)

    Perera, Meeghage; Lin, Ming-Wei; Chuang, Hsun-Jen; Chamlagain, Bhim; Wang, Chongyu; Tan, Xuebin; Cheng, Mark; Tománek, David; Zhou, Zhixian

    2014-03-01

    We report the fabrication of ionic liquid (IL) gated field-effect transistors (FETs) consisting of bilayer and few-layer MoS2. Our transport measurements indicate that the electron mobility μ ~ 60 cm2V-1s-1 at 250 K in ionic liquid gated devices exceeds significantly that of comparable back-gated devices. IL-FETs display a mobility increase from ~100 cm2V-1s-1 at 180 K to ~220 cm2V-1s-1 at 77 K in good agreement with the true channel mobility determined from four-terminal measurements, ambipolar behavior with a high ON/OFF ratio >107 (104) for electrons (holes), and a near ideal sub-threshold swing of ~50 mV/dec at 250 K. We attribute the observed performance enhancement, specifically the increased carrier mobility that is limited by phonons, to the reduction of the Schottky barrier at the source and drain electrode by band bending caused by the ultrathin ionic-liquid dielectric layer. In addition, graphene contacted MoS2 FETs with IL-gating will also be discussed. This work was supported by NSF (No. ECCS-1128297).

  16. Influence of charge carrier mobility and morphology on solar cell parameters in devices of mono- and bis-fullerene adducts

    Science.gov (United States)

    Muth, Mathis-Andreas; Mitchell, William; Tierney, Steven; Lada, Thomas A.; Xue, Xiang; Richter, Henning; Carrasco-Orozco, Miguel; Thelakkat, Mukundan

    2013-12-01

    Herein, we analyze charge carrier mobility and morphology of the active blend layer in thin film organic solar cells and correlate them with device parameters. A low band gap donor-acceptor copolymer in combination with phenyl-C61-butyric acid methyl ester (PCBM) or two bis-adduct fullerenes, bis-PCBM and bis-o-quino-dimethane C60 (bis-oQDMC), is investigated. We study the charge transport of polymer:fullerene blends in hole- and electron-only devices using the space-charge limited current method. Lower electron mobilities are observed in both bis-adduct fullerene blends. Hole mobility, however, is decreased only in the blend containing bis-oQDMC. Both bis-adduct fullerene blends show very high open circuit voltage in solar cell devices, but poor photocurrent compared to the standard PCBM blend for an active layer thickness of 200 nm. Therefore, a higher short circuit current is feasible for the polymer:bis-PCBM blend by reducing the active layer thickness in order to compensate for the low electron mobility, which results in a PCE of 4.3%. For the polymer:bis-oQDMC blend, no such improvement is achieved due to an unfavorable morphology in this particular blend system. The results are supported by external quantum efficiency measurements, atomic force microscopy, transmission electron microscopy and UV/vis spectroscopy. Based on these results, the investigations presented herein give a more scientific basis for the optimization of solar cells.

  17. A possible high-mobility signal in bulk MoTe2: Temperature independent weak phonon decay

    Directory of Open Access Journals (Sweden)

    Titao Li

    2016-11-01

    Full Text Available Layered transition metal dichalcogenides (TMDs have attracted great attention due to their non-zero bandgap for potential application in high carrier mobility devices. Recent studies demonstrate that the carrier mobility of MoTe2 would decrease by orders of magnitude when used for few-layer transistors. As phonon scattering has a significant influence on carrier mobility of layered material, here, we first reported temperature-dependent Raman spectra of bulk 2H-MoTe2 from 80 to 300 K and discovered that the phonon lifetime of both E12g and A1g vibration modes are independent with temperature. These results were explained by the weak phonon decay in MoTe2. Our results imply the existence of a carrier mobility higher than the theoretical value in intrinsic bulk 2H-MoTe2 and the feasibility to obtain MoTe2-based transistors with sufficiently high carrier mobility.

  18. A new approach to calculate charge carrier transport mobility in organic molecular crystals from imaginary time path integral simulations.

    Science.gov (United States)

    Song, Linze; Shi, Qiang

    2015-05-07

    We present a new non-perturbative method to calculate the charge carrier mobility using the imaginary time path integral approach, which is based on the Kubo formula for the conductivity, and a saddle point approximation to perform the analytic continuation. The new method is first tested using a benchmark calculation from the numerical exact hierarchical equations of motion method. Imaginary time path integral Monte Carlo simulations are then performed to explore the temperature dependence of charge carrier delocalization and mobility in organic molecular crystals (OMCs) within the Holstein and Holstein-Peierls models. The effects of nonlocal electron-phonon interaction on mobility in different charge transport regimes are also investigated.

  19. AN EFFICIENT QoS-CONSTRAINED RESOURCE ALLOCATION STRATEGY FOR MULTI-CARRIER MOBILE COMMUNICATION SYSTEMS

    Directory of Open Access Journals (Sweden)

    Srinivas Karedla

    2016-03-01

    Full Text Available Resource allocation strategies in Mobile Communication Systems (4G/5G are proposed to enhance the data transmission and to meet the required QoS of the users by reducing the interference (inter/intra cell. The aim of this paper is to propose an efficient QoS-Constrained resource allocation strategy called QoS-Constrained Modified Load Matrix (QoS-MLM for Multi -Carrier Mobile Communication systems under 4G LTE scenario to reduce interference and to improve aggregate throughput, packet delay. Simulation results show that by using QoS-MLM the aggregate throughput and packet delay has improved significantly when compared to benchmark schedulers.

  20. Designing thiophene-based azomethine oligomers with tailored properties: Self-assembly and charge carrier mobility

    DEFF Research Database (Denmark)

    Kiriy, N.; Bocharova, V.; Kiriy, A.

    2004-01-01

    This paper describes synthesis and characterization of two thiophene-based azomethines designed to optimize solubility, self-assembly, and charge carrier mobility. We found that incorporation of azomethine and amide moieties in the alpha,omega-position, and hexyl chains in the beta-position of th...... with the mobilities of the best organic semiconductors. All these significant differences in properties of related compounds can be attributed to the hydrogen bonding between QT-amide molecules responsible for the observed self-assembly.......-position of the quaterthiophene, considerably improves the self-assembly properties without suppression of solubility. Self-assembly of azomethine oligomers with (QT-amide) and without amide moieties (QT-aniline) were monitored by UV-vis, XRD, and AFM. Although no changes in the UV-vis spectrum of QT-aniline is observed upon...

  1. Charge carrier trapping into mobile, ionic defects in nanoporous ultra-low-k dielectric materials

    Science.gov (United States)

    Plawsky, Joel; Borja, Juan; Lu, Toh-Ming; Gill, William

    2014-03-01

    Reliability and robustness of low-k materials for advanced interconnects has become a major challenge for the continuous down-scaling of silicon semiconductor devices. Metal catalyzed time dependent breakdown (TDDB) is a major force preventing the integration of sub-32nm process technology nodes. We investigate how ionic species can become trapping centers (mobile defects) for charge carriers. A mechanism for describing and quantifying the trapping of charge carriers into mobile ions under bias and temperature stress is presented and experimentally investigated. The dynamics of trapping into ionic centers are severely impacted by temperature and species mass transport. After extended bias and temperature stress, the magnitude of charge trapping into ionic centers decreases asymptotically. Various processes such as the reduction of ionic species, moisture outgassing, and the inhibition of ionic drift via the distortion of local fields were investigated as possible cause for the reduction in charge trapping. Simulations suggest that built-in fields reduce the effect of an externally applied field in directing ionic drift, which can lead to the inhibition of the trapping mechanism. In addition, conduction mechanisms are investigated for reactive and inert electrodes. Seimconductor Research Corporation.

  2. Graphene, a material for high temperature devices; intrinsic carrier density, carrier drift velocity, and lattice energy

    CERN Document Server

    Yin, Yan; Wang, Li; Jin, Kuijuan; Wang, Wenzhong

    2016-01-01

    Heat has always been a killing matter for traditional semiconductor machines. The underlining physical reason is that the intrinsic carrier density of a device made from a traditional semiconductor material increases very fast with a rising temperature. Once reaching a temperature, the density surpasses the chemical doping or gating effect, any p-n junction or transistor made from the semiconductor will fail to function. Here, we measure the intrinsic Fermi level (|E_F|=2.93k_B*T) or intrinsic carrier density (n_in=3.87*10^6 cm^-2 K^-2*T^2), carrier drift velocity, and G mode phonon energy of graphene devices and their temperature dependencies up to 2400 K. Our results show intrinsic carrier density of graphene is an order of magnitude less sensitive to temperature than those of Si or Ge, and reveal the great potentials of graphene as a material for high temperature devices. We also observe a linear decline of saturation drift velocity with increasing temperature, and identify the temperature coefficients of ...

  3. Increased carrier mobility and lifetime in CdSe quantum dot thin films through surface trap passivation and doping.

    Science.gov (United States)

    Straus, Daniel B; Goodwin, E D; Gaulding, E Ashley; Muramoto, Shin; Murray, Christopher B; Kagan, Cherie R

    2015-11-19

    Passivating surface defects and controlling the carrier concentration and mobility in quantum dot (QD) thin films is prerequisite to designing electronic and optoelectronic devices. We investigate the effect of introducing indium in CdSe QD thin films on the dark mobility and the photogenerated carrier mobility and lifetime using field-effect transistor (FET) and time-resolved microwave conductivity (TRMC) measurements. We evaporate indium films ranging from 1 to 11 nm in thickness on top of approximately 40 nm thick thiocyanate-capped CdSe QD thin films and anneal the QD films at 300 °C to densify and drive diffusion of indium through the films. As the amount of indium increases, the FET and TRMC mobilities and the TRMC lifetime increase. The increase in mobility and lifetime is consistent with increased indium passivating midgap and band-tail trap states and doping the films, shifting the Fermi energy closer to and into the conduction band.

  4. Determining the mobility of ions by transient current measurements at high voltages.

    Science.gov (United States)

    Kohn, Peter; Schröter, Klaus; Thurn-Albrecht, Thomas

    2007-08-24

    We present polarization and transient current experiments that allow an independent determination of the charge carrier density and the mobility of ions in polymer electrolytes at low charge carrier density. The method relies on a complete depletion of ions in the bulk electrolyte achieved by applying high voltages. Based on a qualitative model for the charge dynamics in this nonlinear regime, the method is exemplarily applied to a system of polymethylmethacrylate doped with small amounts of a lithium salt. The independently obtained values for the ionic mobility, the charge carrier density, and the conductivity are consistent for all salt concentrations studied. Criteria for the applicability of the method are discussed.

  5. High mobility, printable, and solution-processed graphene electronics.

    Science.gov (United States)

    Wang, Shuai; Ang, Priscilla Kailian; Wang, Ziqian; Tang, Ai Ling Lena; Thong, John T L; Loh, Kian Ping

    2010-01-01

    The ability to print graphene sheets onto large scale, flexible substrates holds promise for large scale, transparent electronics on flexible substrates. Solution processable graphene sheets derived from graphite can form stable dispersions in solutions and are amenable to bulk scale processing and ink jet printing. However, the electrical conductivity and carrier mobilities of this material are usually reported to be orders of magnitude poorer than that of the mechanically cleaved counterpart due to its higher density of defects, which restricts its use in electronics. Here, we show that by optimizing several key factors in processing, we are able to fabricate high mobility graphene films derived from large sized graphene oxide sheets, which paves the way for all-carbon post-CMOS electronics. All-carbon source-drain channel electronics fabricated from such films exhibit significantly improved transport characteristics, with carrier mobilities of 365 cm(2)/(V.s) for hole and 281 cm(2)/(V.s) for electron, measured in air at room temperature. In particular, intrinsic mobility as high as 5000 cm(2)/(V.s) can be obtained from such solution-processed graphene films when ionic screening is applied to nullify the Coulombic scattering by charged impurities.

  6. Carrier behavior of HgTe under high pressure revealed by Hall effect measurement

    Institute of Scientific and Technical Information of China (English)

    胡廷静; 崔晓岩; 李雪飞; 王婧姝; 吕秀梅; 王棱升; 杨景海; 高春晓

    2015-01-01

    We investigate the carrier behavior of HgTe under high pressures up to 23 GPa using in situ Hall effect measurements. As the phase transitions from zinc blende to cinnabar, then to rock salt, and finally to Cmcm occur, all the parameters change discontinuously. The conductivity variation under compression is described by the carrier parameters. For the zinc blende phase, both the decrease of carrier concentration and the increase of mobility indicate the overlapped valence band and conduction band separates with pressure. Pressure causes an increase in the hole concentration of HgTe in the cinnabar phase, which leads to the carrier-type inversion and the lowest mobility at 5.6 GPa. In the phase transition process from zinc blende to rock salt, Te atoms are the major ones in atomic movements in the pressure regions of 1.0–1.5 GPa and 1.8–3.1 GPa, whereas Hg atoms are the major ones in the pressure regions of 1.5–1.8 GPa and 3.1–7.7 GPa. The polar optical scattering of the rock salt phase decreases with pressure.

  7. Mobile Carrier Selection In A Post-Conflict Environment – The Primacy Of Ethnicity Over Conventional Network Effects

    Directory of Open Access Journals (Sweden)

    Zaimović Tarik

    2015-12-01

    Full Text Available In this paper we analyze determinants which affect the selection of mobile carriers in a post-conflict environment - Bosnia and Herzegovina. We apply relevant probability modelling to test perceptions of individual respondents on different network effects obtained through a targeted representative survey. Furthermore, we explore whether some non-traditional influences might affect costumers, focusing on the role of demographic characteristics. Our results confirm that conventional network effects have a role in carrier selection, although they are different across carriers. However, we identify that the ethnicity of respondents overwhelms the traditional network effects by having the highest magnitude in the model. Our findings show that the “ethnic affiliation” of mobile carriers, attributed by the users, remains a persistent factor in attracting and keeping telecommunication costumers in Bosnia and Herzegovina.

  8. Highly efficient carrier multiplication in PbS nanosheets

    NARCIS (Netherlands)

    Aerts, M.; Bielewicz, T.; Klinke, C.; Grozema, F.C.; Houtepen, A.J.; Schins, J.M.; Siebbeles, L.D.A.

    2014-01-01

    Semiconductor nanocrystals are promising for use in cheap and highly efficient solar cells. A high efficiency can be achieved by carrier multiplication (CM), which yields multiple electron-hole pairs for a single absorbed photon. Lead chalcogenide nanocrystals are of specific interest, since their b

  9. 100-fold improvement in carrier drift mobilities in alkanephosphonate-passivated monocrystalline TiO2 nanowire arrays

    Science.gov (United States)

    Mohammadpour, A.; Wiltshire, B. D.; Zhang, Y.; Farsinezhad, S.; Askar, A. M.; Kisslinger, R.; Ren, Y.; Kar, P.; Shankar, K.

    2017-04-01

    Single crystal rutile titania nanowires grown by solvothermal synthesis are actively being researched for use as electron transporting scaffolds in perovskite solar cells, in low detection limit ultraviolet photodetectors, in photoelectrochemical water-splitting, and in chemiresistive and electrochemical sensing. The electron drift mobility (μ n ) in solution-grown TiO2 nanowires is very low due to a high density of deep traps, and reduces performance in optoelectronic devices. In this study, the effects of molecular passivation of the nanowire surface by octadecylphosphonic acid (ODPA), on carrier transport in TiO2 nanowire ensembles, were investigated using transient space charge limited current measurements. Infrared spectroscopy indicated the formation of a highly ordered phosphonate monolayer with a high likelihood of bidentate binding of ODPA to the rutile surface. We report the hole drift mobility (μ p ) for the first time in unpassivated solvothermal rutile nanowires to be 8.2 × 10‑5 cm2 V‑1 s‑1 and the use of ODPA passivation resulted in μ p improving by nearly two orders of magnitude to 7.1 × 10‑3 cm2 V‑1 s‑1. Likewise, ODPA passivation produced between a 2 and 3 order of magnitude improvement in μ n from ∼10‑5–10‑6 cm2 V‑1 s‑1 to ∼10‑3 cm2 V‑1 s‑1. The bias dependence of the post-transit photocurrent decays in ODPA-passivated nanowires indicated that minority carriers were lost to trapping and/or monomolecular recombination for small values of bias (<5 V). Bimolecular recombination was indicated to be the dominant recombination mechanism at higher bias values.

  10. Side chain engineering of fused aromatic thienopyrazine based low band-gap polymers for enhanced charge carrier mobility

    KAUST Repository

    Mondal, Rajib

    2011-01-01

    A strategic side-chain engineering approach leads to the two orders of magnitude enhancement of charge carrier mobility in phenanthrene based fused aromatic thienopyrazine polymers. Hole carrier mobility up to 0.012 cm 2/Vs can be obtained in thin film transistor devices. Polymers were also utilized to fabricate bulk heterojunction photovoltaic devices and the maximum PCE obtained in these OPV\\'s was 1.15%. Most importantly, performances of the devices were correlated with thin morphological analysis performed by atomic force microscopy and grazing incidence X-ray scattering. © 2011 The Royal Society of Chemistry.

  11. Intrinsic carrier mobility of a single-layer graphene covalently bonded with single-walled carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Li, Dian; Shao, Zhi-Gang [Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, Guangdong 510006 (China); Hao, Qing [Department of Aerospace and Mechanical Engineering, University of Arizona, Tucson, Arizona 85721 (United States); Zhao, Hongbo, E-mail: zhaohb@scnu.edu.cn [Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, Guangdong 510006 (China); Department of Aerospace and Mechanical Engineering, University of Arizona, Tucson, Arizona 85721 (United States)

    2014-06-21

    We report intrinsic carrier mobility calculations of a two-dimensional nanostructure that consists of porous single layer graphene covalently bonded with single-walled carbon nanotubes on both sides. We used first-principles calculation and found that the deformation potential of such system is about 25% of that of graphene, and the carrier mobility is about 5 × 10{sup 4} cm{sup 2} V{sup −1} s{sup −1} for both electrons and holes, about one order of magnitude lower than that of graphene. This nanostructure and its three-dimensional stacking could serve as novel organic electronic materials.

  12. Influence of Blend Ratio and Processing Additive on Free Carrier Yield and Mobility in PTB7:PC71BM Photovoltaic Solar Cells

    Science.gov (United States)

    2016-01-01

    Charge separation and extraction dynamics were investigated in high-performance bulk heterojunction solar cells made from the polymer PTB7 and the soluble fullerene PC71BM on a broad time scale from subpicosecond to microseconds using ultrafast optical probing of carrier drift and the integral-mode photocurrent measurements. We show that the short circuit current is determined by the separation of charge pairs into free carriers, which is strongly influenced by blend composition. This separation is found to be efficient in fullerene-rich blends where a high electron mobility of >0.1 cm2 V–1 s–1 is observed in the first 10 ps after excitation. Morphology optimization using the solvent additive 1,8-diiodooctane (DIO) doubles the charge pair separation efficiency and the short-circuit current. Carrier extraction at low internal electric field is slightly faster from the cells prepared with DIO, which can reduce recombination losses and enhance a fill factor. PMID:27293495

  13. First measurements of charge carrier density and mobility of in-situ enriched 28Si

    Science.gov (United States)

    Ramanayaka, A. N.; Dwyer, K. J.; Kim, Hyun-Soo; Stewart, M. D., Jr.; Pomeroy, J. M.

    Magnetotransport in top gated Hall bar devices is investigated to characterize the electrical properties of in-situ enriched 28Si. Isotopically enriched 28Si is an ideal candidate for quantum information processing devices as the elimination of unpaired nuclear spins improves the fidelity of the quantum information. Using mass filtered ion beam deposition we, in-situ, enrich and deposit epitaxial 28Si, achieving several orders of magnitude better enrichment compared to other techniques. In order to explore the electrical properties and optimize the growth conditions of in-situ enriched 28Si we perform magnetotransport measurements on top gated Hall bar devices at temperatures ranging from 300 K to cryogenic temperatures and at moderate magnetic fields. Here, we report on the charge carrier density and mobility extracted from such experiments, and will be compared among different growth conditions of in-situ enriched 28Si.

  14. Study on the drift mobility of carriers in vitreous Se thin film by the voltage-pulse injection

    Energy Technology Data Exchange (ETDEWEB)

    Lee, J.J.; Kim, I.H.; Choi, K.W.; Choi, C.K. (Gyeonsang National Univ., Jinju (Republic of Korea))

    1982-05-01

    The drift mobility of carriers in the vitreous Se thin films were measured by the Haynes-Schokley method. It had been shown that the hole mobility was about 0.83 cm/sup 3//V-sec and the drift velocity showed no time dependence. It had also been shown that the value of Pool-Frenkel parameter was approximately 2 from the I-V curve.

  15. High power terahertz induced carrier multiplication in Silicon

    DEFF Research Database (Denmark)

    Tarekegne, Abebe Tilahun; Pedersen, Pernille Klarskov; Iwaszczuk, Krzysztof;

    2015-01-01

    The application of an intense THz field results a nonlinear transmission in high resistivity silicon. Upon increasing field strength, the transmission falls from 70% to 62% due to carrier generation through THz-induced impact ionization and subsequent absorption of the THz field by free electrons....

  16. Charge Carriers in Planar and Meso-Structured Organic-Inorganic Perovskites: Mobilities, Lifetimes, and Concentrations of Trap States.

    Science.gov (United States)

    Hutter, Eline M; Eperon, Giles E; Stranks, Samuel D; Savenije, Tom J

    2015-08-06

    Efficient solar cells have been obtained using thin films of solution-processed organic-inorganic perovskites. However, there remains limited knowledge about the relationship between preparation route and optoelectronic properties. We use complementary time-resolved microwave conductivity (TRMC) and photoluminescence (PL) measurements to investigate the charge carrier dynamics in thin planar films of CH3NH3PbI(3-x)Cl(x), CH3NH3PbI3, and their meso-structured analogues. High mobilities close to 30 cm(2)/(V s) and microsecond-long lifetimes are found in thin films of CH3NH3PbI(3-x)Cl(x), compared to lifetimes of only a few hundred nanoseconds in CH3NH3PbI3 and meso-structured perovskites. We describe our TRMC and PL experiments with a global kinetic model, using one set of kinetic parameters characteristic for each sample. We find that the trap density is less than 5 × 10(14) cm(-3) in CH3NH3PbI(3-x)Cl(x), 6 × 10(16) cm(-3) in the CH3NH3PbI3 thin film and ca. 10(15) cm(-3) in both meso-structured perovskites. Furthermore, our results imply that band-to-band recombination is enhanced by the presence of dark carriers resulting from unintentional doping of the perovskites. Finally, our general approach to determine concentrations of trap states and dark carriers is also highly relevant to other semiconductor materials.

  17. Carrier Mobility Enhancement of Tensile Strained Si and SiGe Nanowires via Surface Defect Engineering.

    Science.gov (United States)

    Ma, J W; Lee, W J; Bae, J M; Jeong, K S; Oh, S H; Kim, J H; Kim, S-H; Seo, J-H; Ahn, J-P; Kim, H; Cho, M-H

    2015-11-11

    Changes in the carrier mobility of tensile strained Si and SiGe nanowires (NWs) were examined using an electrical push-to-pull device (E-PTP, Hysitron). The changes were found to be closely related to the chemical structure at the surface, likely defect states. As tensile strain is increased, the resistivity of SiGe NWs deceases in a linear manner. However, the corresponding values for Si NWs increased with increasing tensile strain, which is closely related to broken bonds induced by defects at the NW surface. Broken bonds at the surface, which communicate with the defect state of Si are critically altered when Ge is incorporated in Si NW. In addition, the number of defects could be significantly decreased in Si NWs by incorporating a surface passivated Al2O3 layer, which removes broken bonds, resulting in a proportional decrease in the resistivity of Si NWs with increasing strain. Moreover, the presence of a passivation layer dramatically increases the extent of fracture strain in NWs, and a significant enhancement in mobility of about 2.6 times was observed for a tensile strain of 5.7%.

  18. Influence of high-pressure treatment on charge carrier transport in PbS colloidal quantum dot solids.

    Science.gov (United States)

    Heo, Seung Jin; Yoon, Seokhyun; Oh, Sang Hoon; Yoon, Doo Hyun; Kim, Hyun Jae

    2014-01-21

    We investigated the effects of high-pressure treatment on charge carrier transport in PbS colloidal quantum dot (CQD) solids. We applied high pressure to PbS CQD solids using nitrogen gas to reduce the inter-dot distance. Using this simple process, we obtained conductive PbS CQD solids. Terahertz time-domain spectroscopy was used to study charge carrier transport as a function of pressure. We found that the minimum pressure needed to increase the dielectric constant, conductivity, and carrier mobility was 4 MPa. All properties dramatically improved at 5 MPa; for example, the mobility increased from 0.13 cm(2) V(-1) s(-1) at 0.1 MPa to 0.91 cm(2) V(-1) s(-1) at 5 MPa. We propose this simple process as a nondestructive approach for making conductive PbS CQD solids that are free of chemical and physical defects.

  19. Ultrahigh Carrier Mobility Achieved in Photoresponsive Hybrid Perovskite Films via Coupling with Single-Walled Carbon Nanotubes

    KAUST Repository

    Li, Feng

    2017-02-22

    Organolead trihalide perovskites have drawn substantial interest for photovoltaic and optoelectronic applications due to their remarkable physical properties and low processing cost. However, perovskite thin films suffer from low carrier mobility as a result of their structural imperfections such as grain boundaries and pinholes, limiting their device performance and application potential. Here we demonstrate a simple and straightforward synthetic strategy based on coupling perovskite films with embedded single-walled carbon nanotubes. We are able to significantly enhance the hole and electron mobilities of the perovskite film to record-high values of 595.3 and 108.7 cm(2) V(-1) s(-1) , respectively. Such a synergistic effect can be harnessed to construct ambipolar phototransistors with an ultrahigh detectivity of 3.7 × 10(14) Jones and a responsivity of 1 × 10(4) A W(-1) , on a par with the best devices available to date. The perovskite/carbon nanotube hybrids should provide a platform that is highly desirable for fields as diverse as optoelectronics, solar energy conversion, and molecular sensing.

  20. Charge-carrier relaxation dynamics in highly ordered poly( p -phenylene vinylene): Effects of carrier bimolecular recombination and trapping

    Science.gov (United States)

    Soci, Cesare; Moses, Daniel; Xu, Qing-Hua; Heeger, Alan J.

    2005-12-01

    We have studied the charge-carrier relaxation dynamics in highly ordered poly( p -phenylene vinylene) over a broad time range using fast (t>100ps) transient photoconductivity measurements. The carrier density was also monitored (t>100fs) by means of photoinduced absorption probed at the infrared active vibrational modes. We find that promptly upon charge-carrier photogeneration, the initial polaron dynamics is governed by bimolecular recombination, while later in the subnanosecond time regime carrier trapping gives rise to an exponential decay of the photocurrent. The more sensitive transient photocurrent measurements indicate that in the low excitation regime, when the density of photocarriers is comparable to that of the trapping states (˜1016cm-3) , carrier hopping between traps along with transport via extended states determines the carrier relaxation, a mechanism that is manifested by a long-lived photocurrent “tail.” This photocurrent tail is reduced by lowering the temperature and/or by increasing the excitation density. Based on these data, we develop a comprehensive kinetic model that takes into account the bipolar charge transport, the free-carrier bimolecular recombination, the carrier trapping, and the carrier recombination involving free and trapped carriers.

  1. Driving Sustainable Competitive Advantage in the Mobile Industry: Evidence from U.S. Wireless Carriers

    Directory of Open Access Journals (Sweden)

    Changhee Kim

    2016-07-01

    Full Text Available In light of the growing importance of data network quality in the wireless industry, this study analyzes and compares efficiencies in management, service quality, network quality, and market in the 4G Long Term Evolution (LTE wireless industry. For this purpose, a bootstrap data envelopment analysis (DEA model using representative U.S. wireless carriers as decision making units (DMUs was designed and conducted, with further verification through the Mann-Whitney U and Wilcoxon W test, to examine the differences in efficiency distribution. The results indicate that, in terms of efficiency distribution, network quality efficiency and market efficiency belongs to the same group as that which has high management efficiency. Based on these results, this paper suggests implications and strategic guidelines for wireless carriers for improvement in management efficiency.

  2. Transient mobility in silicon as seen by a combination of free-carrier absorption and resonance-coupled photoconductive decay

    Science.gov (United States)

    Feldman, Ari; Ahrenkiel, Richard; Lehman, John

    2013-03-01

    The combination of the resonance-coupled photoconductive decay (RCPCD) apparatus and a pump-probe free carrier absorption experiment results in a method of viewing transient mobility. RCPCD uses an Nd:YAG laser operating at 1064 nm to pump the p-type silicon wafer, and a microwave coil antenna detects the transient excess-carrier concentration. The pump-probe experiment uses the same pump laser and a 10.6 μm CO2 laser with HgCdTe photodetector to measure the transient change in absorption. The change in conductivity detected by RCPCD is directly proportional to the excess-carrier concentration (Δn) and mobility (μ), whereas the pump-probe experiment has an inversely proportional relationship. By mathematically combining these signals at equivalent optical fluxes, a quantity proportional to the mobility emerges. The mobility is shown to vary both temporally and with respect to injection, countering the assumption that mobility is constant for photoconductive decay measurements. Theory and results are discussed within.

  3. Charge carrier mobility and concentration as a function of composition in AgPO3-AgI glasses.

    Science.gov (United States)

    Rodrigues, Ana Candida Martins; Nascimento, Marcio Luis Ferreira; Bragatto, Caio Barca; Souquet, Jean-Louis

    2011-12-21

    Conductivity data of the xAgI(1 - x)AgPO(3) system (0 ≤ x ≤ 0.5) were collected in the liquid and glassy states. The difference in the dependence of ionic conductivity on temperature below and above their glass transition temperatures (T(g)) is interpreted by a discontinuity in the charge carrier's mobility mechanisms. Charge carrier displacement occurs through an activated mechanism below T(g) and through a Vogel-Fulcher-Tammann-Hesse mechanism above this temperature. Fitting conductivity data with the proposed model allows one to determine separately the enthalpies of charge carrier formation and migration. For the five investigated compositions, the enthalpy of charge carrier formation is found to decrease, with x, from 0.86 to 0.2 eV, while the migration enthalpy remains constant at ≈0.14 eV. Based on these values, the charge carrier mobility and concentration in the glassy state can then be calculated. Mobility values at room temperature (≈10(-4) cm(2) V(-1) s(-1)) do not vary significantly with the AgI content and are in good agreement with those previously measured by the Hall-effect technique. The observed increase in ionic conductivity with x would thus only be due to an increase in the effective charge carrier concentration. Considering AgI as a weak electrolyte, the change in the effective charge carrier concentration is justified and is correlated to the partial free energy of silver iodide forming a regular solution with AgPO(3).

  4. High carrier frequency of 21-hydroxylase deficiency in Cyprus.

    Science.gov (United States)

    Phedonos, A A P; Shammas, C; Skordis, N; Kyriakides, T C; Neocleous, V; Phylactou, L A

    2013-12-01

    Congenital adrenal hyperplasia (CAH) due to 21-hydroxylase deficiency (21-OHD) is a common autosomal recessive disorder caused by mutations in the CYP21A2 gene. The carrier frequency of CYP21A2 mutations has been estimated to be 1:25 to 1:10 on the basis of newborn screening. The main objective of this study was to determine the carrier frequency in the Cypriot population of mutations in the CYP21A2 gene. Three hundred unrelated subjects (150 males and 150 females) from the general population of Cyprus were screened for mutations in the CYP21A2 gene and its promoter. The CYP21A2 genotype analysis identified six different mutants and revealed a carrier frequency of 9.83% with the mild p.Val281Leu being the most frequent (4.3%), followed by p.Qln318stop (2.5%), p.Pro453Ser (1.33%), p.Val304Met (0.83%), p.Pro482Ser (0.67%) and p.Met283Val (0.17%). The notable high CYP21A2 carrier frequency of the Cypriot population is one of the highest reported so far by genotype analysis. Knowledge of the mutational spectrum of CYP21A2 will enable to optimize mutation detection strategy for genetic diagnosis of 21-OHD not only in Cyprus, but also the greater Mediterranean region.

  5. High-quality epitaxial graphene devices with low carrier density for resistance metrology

    Science.gov (United States)

    Yang, Yanfei; Huang, Lung-I.; Newell, David; Real, Mariano; Elmquist, Randolph

    2014-03-01

    Epitaxially grown graphene on silicon carbide (SiC) is a promising material for both quantum resistance metrology and wafer-scale electronics. However, monolayers are typically found to be heavily n-doped due to the charge exchange between the graphene and the non-conducting buffer layer beneath that is covalently bonded to the SiC substrate. Carrier densities are usually in the range of 1012 ~ 1013 cm-2, where heavy doping shifts the quantized Hall resistance plateau to high magnetic field values. Various gating methods have been developed to reduce the carrier density, but require lithography processes that increase the probability of contamination that degrades the performance of the devices. Recently, we fabricated high-quality Hall devices on diced semi-insulating SiC wafers, obtaining carrier densities in the range of 1010 ~ 1011 cm-2 and mobility above 104 cm2V-1s-1 without gating. Graphene is grown on the Si face of SiC(0001) substrates and devices are fabricated using a metal layer subtractive process without organic chemical contamination of the graphene. We measure well-developed quantum Hall plateaus with filling factor ν = 2, the fingerprint for monolayer graphene, at magnetic fields below 2 T at liquid helium temperature. A variety of quantum phenomena are observed in these clean, high quality graphene devices. NIST and Georgetown University.

  6. First-principles study of photovoltaics and carrier mobility for non-toxic halide perovskite CH3NH3SnCl3: theoretical prediction.

    Science.gov (United States)

    Wang, Lin-Zhi; Zhao, Yu-Qing; Liu, Biao; Wu, Li-Juan; Cai, Meng-Qiu

    2016-08-10

    Promising candidates in this respect are organometal perovskites ABX3, which have been intensely investigated during the last years. In this paper, we calculate the crystal structures, optical properties and carrier mobility for three phases of non-toxic perovskite halide CH3NH3SnCl3 by applying density functional theory with the nonlocal van der Waals (vdW) correlation. The results show that CH3NH3SnCl3 has superior performance in terms of its optical absorption coefficient, which reaches as high as 10(5) cm(-1) and has proven itself to be a perfect solar light harvester. Most importantly, the results of intrinsic carrier mobility of CH3NH3SnCl3 show that the electron mobility of the triclinic phase can achieve a large magnitude of 1700 cm(2) V(-1) s(-1), which is mainly due to the small effective mass. We ascribe the superior photoelectric property to the ferroelectricity, which may be caused by the distorted octahedral SnCl6(-).

  7. Measuring the complete cross-cell carrier mobility distributions in bulk heterojunction solar cells

    Science.gov (United States)

    Seifter, Jason; Sun, Yanming; Choi, Hyosung; Lee, Byoung Hoon; Heeger, Alan

    2015-03-01

    Carbon nanotube-enabled, vertical, organic field effect transistors (CN-VFETs) based on the small molecule dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) have demonstrated high current, low-power operation suitable for driving active matix organic light emitting diode (AMOLED) displays. This performance is achieved without the need for costly high-resolution patterning, despite the low mobility of the organic semiconductor, by employing sub-micron channel widths, defined in the vertical devices by the thickness of the semiconducting layer. Replacing the thermally evaporated small molecule semiconductor with a solution-processed polymer would possibly further simplify the fabrication process and reduce manufacturing cost. Here we investigate several polymer systems as wide bandgap semiconducting channel layers for potentially air stable and transparent CN-VFETs. The field effect mobility and optical transparency of the polymer layers are determined, and the performance and air stability of CN-VFET devices are measured. A. S. gratefully acknowledges support from the National Science Foundation under DMR-1156737.

  8. High Electron Mobility Transistor Structures on Sapphire Substrates Using CMOS Compatible Processing Techniques

    Science.gov (United States)

    Mueller, Carl; Alterovitz, Samuel; Croke, Edward; Ponchak, George

    2004-01-01

    System-on-a-chip (SOC) processes are under intense development for high-speed, high frequency transceiver circuitry. As frequencies, data rates, and circuit complexity increases, the need for substrates that enable high-speed analog operation, low-power digital circuitry, and excellent isolation between devices becomes increasingly critical. SiGe/Si modulation doped field effect transistors (MODFETs) with high carrier mobilities are currently under development to meet the active RF device needs. However, as the substrate normally used is Si, the low-to-modest substrate resistivity causes large losses in the passive elements required for a complete high frequency circuit. These losses are projected to become increasingly troublesome as device frequencies progress to the Ku-band (12 - 18 GHz) and beyond. Sapphire is an excellent substrate for high frequency SOC designs because it supports excellent both active and passive RF device performance, as well as low-power digital operations. We are developing high electron mobility SiGe/Si transistor structures on r-plane sapphire, using either in-situ grown n-MODFET structures or ion-implanted high electron mobility transistor (HEMT) structures. Advantages of the MODFET structures include high electron mobilities at all temperatures (relative to ion-implanted HEMT structures), with mobility continuously improving to cryogenic temperatures. We have measured electron mobilities over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively in MODFET structures. The electron carrier densities were 1.6 and 1.33 x 10(exp 12)/sq cm at room and liquid helium temperature, respectively, denoting excellent carrier confinement. Using this technique, we have observed electron mobilities as high as 900 sq cm/V-sec at room temperature at a carrier density of 1.3 x 10(exp 12)/sq cm. The temperature dependence of mobility for both the MODFET and HEMT structures provides insights into the mechanisms that allow for enhanced

  9. Investigations of the drift mobility of carriers and density of states in nanocrystalline CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Baljinder [Department of Physics, Kurukshetra University, Kurukshetra 136119 (India); Department of Physics, Panjab University, Chandigarh 160014 (India); Singh, Janpreet; Kaur, Jagdish [Department of Physics, Panjab University, Chandigarh 160014 (India); Moudgil, R.K. [Department of Physics, Kurukshetra University, Kurukshetra 136119 (India); Tripathi, S.K., E-mail: surya@pu.ac.in [Department of Physics, Panjab University, Chandigarh 160014 (India)

    2016-06-01

    Nanocrystalline Cadmium Sulfide (nc-CdS) thin films have been prepared on well-cleaned glass substrate at room temperature (300 K) by thermal evaporation technique using inert gas condensation (IGC) method. X-ray diffraction (XRD) analysis reveals that the films crystallize in hexagonal structure with preferred orientation along [002] direction. Scanning electron microscope (SEM) and Transmission electron microscope (TEM) studies reveal that grains are spherical in shape and uniformly distributed over the glass substrates. The optical band gap of the film is estimated from the transmittance spectra. Electrical parameters such as Hall coefficient, carrier type, carrier concentration, resistivity and mobility are determined using Hall measurements at 300 K. Transit time and mobility are estimated from Time of Flight (TOF) transient photocurrent technique in gap cell configuration. The measured values of electron drift mobility from TOF and Hall measurements are of the same order. Constant Photocurrent Method in ac-mode (ac-CPM) is used to measure the absorption spectra in low absorption region. By applying derivative method, we have converted the measured absorption data into a density of states (DOS) distribution in the lower part of the energy gap. The value of Urbach energy, steepness parameter and density of defect states have been calculated from the absorption and DOS spectra.

  10. High-mobility ultrathin semiconducting films prepared by spin coating.

    Science.gov (United States)

    Mitzi, David B; Kosbar, Laura L; Murray, Conal E; Copel, Matthew; Afzali, Ali

    2004-03-18

    The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (approximately 50 A), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS(2-x)Se(x) films, which exhibit n-type transport, large current densities (>10(5) A cm(-2)) and mobilities greater than 10 cm2 V(-1) s(-1)--an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).

  11. Generating free charges by carrier multiplication in quantum dots for highly efficient photovoltaics.

    Science.gov (United States)

    Ten Cate, Sybren; Sandeep, C S Suchand; Liu, Yao; Law, Matt; Kinge, Sachin; Houtepen, Arjan J; Schins, Juleon M; Siebbeles, Laurens D A

    2015-02-17

    CONSPECTUS: In a conventional photovoltaic device (solar cell or photodiode) photons are absorbed in a bulk semiconductor layer, leading to excitation of an electron from a valence band to a conduction band. Directly after photoexcitation, the hole in the valence band and the electron in the conduction band have excess energy given by the difference between the photon energy and the semiconductor band gap. In a bulk semiconductor, the initially hot charges rapidly lose their excess energy as heat. This heat loss is the main reason that the theoretical efficiency of a conventional solar cell is limited to the Shockley-Queisser limit of ∼33%. The efficiency of a photovoltaic device can be increased if the excess energy is utilized to excite additional electrons across the band gap. A sufficiently hot charge can produce an electron-hole pair by Coulomb scattering on a valence electron. This process of carrier multiplication (CM) leads to formation of two or more electron-hole pairs for the absorption of one photon. In bulk semiconductors such as silicon, the energetic threshold for CM is too high to be of practical use. However, CM in nanometer sized semiconductor quantum dots (QDs) offers prospects for exploitation in photovoltaics. CM leads to formation of two or more electron-hole pairs that are initially in close proximity. For photovoltaic applications, these charges must escape from recombination. This Account outlines our recent progress in the generation of free mobile charges that result from CM in QDs. Studies of charge carrier photogeneration and mobility were carried out using (ultrafast) time-resolved laser techniques with optical or ac conductivity detection. We found that charges can be extracted from photoexcited PbS QDs by bringing them into contact with organic electron and hole accepting materials. However, charge localization on the QD produces a strong Coulomb attraction to its counter charge in the organic material. This limits the production

  12. Highly mobile oxygen holes in magnesium oxide

    Science.gov (United States)

    Freund, Minoru M.; Freund, Friedemann; Batllo, Francois

    1989-01-01

    High-purity MgO exhibits an unexpected giant anomaly of the apparent static dielectric constant and a positive surface charge of the order of 5 x 10 to the 21st/cu cm in the top 15 nm. It is postulated that the MgO matrix contains traces of peroxy defects, O2(2-), associated with Mg(2+) vacancies. Above approximately 400 C the O2(2-) dissociates to vacancy bound O(-) and highly mobile O(-) states, which diffuse to the surface, giving rise to a high surface conductivity.

  13. Charge carrier mobility in conjugated organic polymers: simulation of an electron mobility in a carbazole-benzothiadiazole-based polymer

    Science.gov (United States)

    Li, Yaping; Lagowski, Jolanta B.

    2011-08-01

    Inorganic (mostly silicon based) solar cells are important devices that are used to solve the world energy and environmental needs. Now days, organic solar cells are attracting considerable attention in the field of photovoltaic cells because of their low cost and processing flexibility. Often conjugated polymers are used in the construction of the organic solar cells. We study the conjugated polymers' charge transport using computational approach that involves the use of the density functional theory (DFT), semiempirical (ZINDO), and Monte Carlo (MC) theoretical methods in order to determine their transfer integrals, reorganization energies, transfer rates (with the use of Marcus-Hush equation) and mobilities. We employ the experimentally determined three dimensional (3D) structure of poly(9,9'-di-n-octylfluorene-alt-benzothiadiazole) (F8BT) to estimate the electron mobility in a similar co-alternating polymer consisting of carbazole and benzothiadiazole units (C8BT). In agreement with our previous work, we found that including an orientational disorder in the crystal reduces the electron mobility in C8BT. We hope that the proposed computational approach can be used to predict charge mobility in organic materials that are used in solar cells.

  14. Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

    KAUST Repository

    Salas-Villasenor, A. L.

    2010-06-29

    Cadmium sulfide thin film transistors were demonstrated as the n-type device for use in flexible electronics. CdS thin films were deposited by chemical bath deposition (70° C) on either 100 nm HfO2 or SiO2 as the gate dielectrics. Common gate transistors with channel lengths of 40-100 μm were fabricated with source and drain aluminum top contacts defined using a shadow mask process. No thermal annealing was performed throughout the device process. X-ray diffraction results clearly show the hexagonal crystalline phase of CdS. The electrical performance of HfO 2 /CdS -based thin film transistors shows a field effect mobility and threshold voltage of 25 cm2 V-1 s-1 and 2 V, respectively. Improvement in carrier mobility is associated with better nucleation and growth of CdS films deposited on HfO2. © 2010 The Electrochemical Society.

  15. High electron mobility and large magnetoresistance in the half-Heusler semimetal LuPtBi

    KAUST Repository

    Hou, Zhipeng

    2015-12-18

    Materials with high carrier mobility showing large magnetoresistance (MR) have recently received much attention because of potential applications in future high-performance magnetoelectric devices. Here, we report on an electron-hole-compensated half-Heusler semimetal LuPtBi that exhibits an extremely high electron mobility of up to 79000cm2/Vs with a nonsaturating positive MR as large as 3200% at 2 K. Remarkably, the mobility at 300 K is found to exceed 10500cm2/Vs, which is among the highest values reported in three-dimensional bulk materials thus far. The clean Shubnikov–de Haas quantum oscillation observed at low temperatures and the first-principles calculations together indicate that the high electron mobility is due to a rather small effective carrier mass caused by the distinctive band structure of the crystal. Our findings provide a different approach for finding large, high-mobility MR materials by designing an appropriate Fermi surface topology starting from simple electron-hole-compensated semimetals.

  16. Investigation of carriers of lustrous carbon at high temperatures

    Directory of Open Access Journals (Sweden)

    M. Holtzer

    2010-01-01

    Full Text Available Lustrous carbon is very important in processes of iron casting in green sand. Lustrous carbon (pirografit is a microcrystalline carbon form, which evolves from a gaseous phase. In the case of applying additions, generating lustrous carbon, for sands with bentonite, there is always a danger of emitting – due to a high temperature of liquid cast iron and a humidity -compounds hazardous for a human health. There can be: CO, SO2, benzene, toluene, ethylbenzene, xylene (the so-called: BTEX as well as polycyclic aromatic hydrocarbons (PAHs. In order to asses the selected mixtures: bentonite – carrier of lustrous carbon, in which a coal dust fraction was limited, the thermogravimetric analysis and the analysis of evolving gases were performed. Examinations were carried out in the Applications Laboratory NITZSCH-Gerätebau GmbH, Selb/Bavaria, Germany. The NETZSCH model STA 449 F3 Jupiter® simultaneous thermal analyzer was used to measure the mass change and transformation energetics of materials. The system employed for this work was equipped with an SiC furnace capable of operation from 25 to 1550°C. The mass spectrometer of the QMS 403 allows detection of mass numbers between 1 and 300 amu (atomic mass unit.

  17. High integrity carrier phase navigation using multiple civil GPS signals

    Science.gov (United States)

    Jung, Jaewoo

    2000-11-01

    A navigation system should guide users to their destinations accurately and reliably. Among the many available navigation aids, the Global Positioning System stands out due to its unique capabilities. It is a satellite-based navigation system which covers the entire Earth with horizontal accuracy of 20 meters for stand alone civil users. Today, the GPS provides only one civil signal, but two more signals will be available in the near future. GPS will provide a second signal at 1227.60 MHz (L2) and a third signal at 1176.45 MHz (Lc), in addition to the current signal at 1575.42 MHz (L1). The focus of this thesis is exploring the possibility of using beat frequencies of these signals to provide navigation aid to users with high accuracy and integrity. To achieve high accuracy, the carrier phase differential GPS is used. The integer ambiguity is resolved using the Cascade Integer Resolution (CIR), which is defined in this thesis. The CIR is an instantaneous, geometry-free integer resolution method utilizing beat frequencies of GPS signals. To insure high integrity, the probability of incorrect integer ambiguity resolution using the CIR is analyzed. The CIR can immediately resolve the Lc integer ambiguity up to 2.4 km from the reference receiver, the Widelane (L1-L2) integer ambiguity up to 22 km, and the Extra Widelane (L2-Lc) integer ambiguity from there on, with probability of incorrect integer resolution of 10-4 . The optimal use of algebraic combinations of multiple GPS signals are also investigated in this thesis. Finally, the gradient of residual differential ionospheric error is estimated to stimated to increase performance of the CIR.

  18. Investigation of carrier density and mobility in microcrystalline silicon alloys using Hall effect and thermopower measurements; Untersuchung der Ladungstraegerkonzentration und -beweglichkeit in mikrokristallinen Siliziumlegierungen mit Hall-Effekt und Thermokraft

    Energy Technology Data Exchange (ETDEWEB)

    Sellmer, Christian

    2012-08-31

    The electronic properties of amorphous and microcrystalline silicon layers in thin-film solar cells significantly affect the efficiency of solar cells. An important property of the individual layer is the electronic transport, which is described by the variables conductivity, photoconductivity, mobility, and carrier concentration. In the past, individual characterization methods were typically used to determine the electronic properties. Using the combination of Hall effect, conductivity, and thermoelectric power measurements additional variables can be derived, such as the effective density of states at the valence and conduction band edge, making a more detailed description of the material possible. To systematically study the electronic properties - in particular carrier mobility and carrier concentration - various series of silicon films are prepared for this work including microcrystalline silicon layers of different doping and crystallinity and a series of silicon films where the Fermi level is moved by irradiation with high energy electrons on one and the same sample. The results show that the transition from amorphous to microcrystalline transport is relatively abrupt. If the electron transport takes place in only amorphous regions, it is marked by the sign anomaly of the Hall effect. If a continuous crystalline path exists, the electronic properties are dominated by the crystalline volume fraction. The results of the measurements of silicon layers are compared with those of microcrystalline silicon carbide samples. Silicon carbide is especially interesting for future applications in thin-film solar cells due to high transparency and high conductivity. It is shown that the effective density of states at the valence and conduction band edge as a function of temperature in p- and n-type microcrystalline silicon and silicon carbide samples largely coincide with those of crystalline silicon or silicon carbide. A square root shaped profile of the density of

  19. High-hole-mobility organic-inorganic perovskite field-effect transistors (Conference Presentation)

    Science.gov (United States)

    Matsushima, Toshinori; Hwang, Sun Bin; Sandanayaka, Atula D.; Qin, Chuanjiang; Fujihara, Takashi; Yahiro, Masayuki; Adachi, Chihaya

    2016-11-01

    We have recently focused our attention on the application of perovskite materials to a semiconducting layer in field-effect transistors. Because perovskite materials are expected to promise the processability and flexibility inherent to organic semiconductors as well as the superior carrier transport inherent to inorganic semiconductors, we believe that organic semiconductor-like cost-effective, flexible transistors with inorganic semiconductor-like high carrier mobility can be realized using perovskite semiconductors in future. In this study, we have prepared the tin iodide-based perovskite as a semiconducting layer on silicon dioxide layers treated with a self-assembled monolayer containing ammonium iodide terminal groups by spin coating and, then, source-drain electrodes on the perovskite layer by vacuum deposition for the fabrication of a top-contact perovskite transistor. Because of a well-developed perovskite layer formed on the treated substrate and reduced contact resistance resulting from the top-contact structure, we have obtained a new record hole mobility of up to 12 cm2 V-1 s-1 in our perovskite transistors, which is about five times higher than a previous record hole mobility and is considered to be a very good value when compared with widely investigated organic transistors. Along with the high hole mobility, we have demonstrated that this surface treatment leads to smaller hysteresis in output and transfer characteristics and better stress stability under constant gate voltage application. These findings open the way for huge advances in solution-processable high-mobility transistors.

  20. Mobilities

    DEFF Research Database (Denmark)

    simple movements of people, goods, and information from A to B. The ‘mobilities turn’ has made it its hallmark to explore the ‘more than’ effects of a world increasingly on the move. This new title in the Routledge Series ‘Critical Concepts in Built Environment’ creates a state-of-the-art reference work......The world is on the move. This is a widespread understanding by many inhabitants of contemporary society across the Globe. But what does it actually mean? During over one decade the ‘mobilities turn’ within the social sciences have provided a new set of insights into the repercussions of mobilities...... to social networks, personal identities, and our relationship to the built environment. The omnipresence of mobilities within everyday life, high politics, technology, and tourism (to mention but a few) all point to a key insight harnessed by the ‘mobilities turn’. Namely that mobilities is much more than...

  1. Mobile Ion Induced Slow Carrier Dynamics in Organic-Inorganic Perovskite CH₃NH₃PbBr₃.

    Science.gov (United States)

    Chen, Sheng; Wen, Xiaoming; Sheng, Rui; Huang, Shujuan; Deng, Xiaofan; Green, Martin A; Ho-Baillie, Anita

    2016-03-02

    Here, we investigate photoluminescence (PL) and time-resolved photoluminescence (TRPL) in CH3NH3PbBr3 perovskite under continuous illumination, using optical and electro-optical techniques. Under continuous excitation at constant intensity, PL intensity and PL decay (carrier recombination) exhibit excitation intensity dependent reductions in the time scale of seconds to minutes. The enhanced nonradiative recombination is ascribed to light activated negative ions and their accumulation which exhibit a slow dynamics in a time scale of seconds to minutes. The observed result suggests that the organic-inorganic hybrid perovskite is a mixed electronic-ionic semiconductor. The key findings in this work suggest that ions are photoactivated or electro-activated and their accumulation at localized sites can result in a change of carrier dynamics. The findings are therefore useful for the understanding of instability of perovskite solar cells and shed light on the necessary strategies for performance improvement.

  2. Charge carrier density dependence of the hole mobility in poly(p-phenylene vinylene)

    NARCIS (Netherlands)

    Tanase, C; Blom, PWM; de Leeuw, DM; Meijer, EJ

    2004-01-01

    The hole transport in various poly(p-phenylene vinylene) (PPV) derivatives has been investigated in field-effect transistors (FETs) and light-emitting diodes (LEDs) as a function of temperature and applied bias. The discrepancy between the experimental hole mobilities extracted from FETs and LEDs ba

  3. Nanoscale carrier injectors for high luminescence Si-based LEDs

    NARCIS (Netherlands)

    Piccolo, G.; Kovalgin, Alexeij Y.; Schmitz, Jurriaan

    2012-01-01

    In this paper we present the increased light emission for Sip–i–n light emitting diodes (LEDs) by geometrical scaling of the injector size for p- and n- type carriers. Simulations and electrical and optical characteristics of our realized devices support our findings. Reducing the injector size

  4. Nanoscale carrier injectors for high luminescence Si-based LEDs

    NARCIS (Netherlands)

    Piccolo, G.; Kovalgin, A.Y.; Schmitz, J.

    2012-01-01

    In this paper we present the increased light emission for Sip–i–n light emitting diodes (LEDs) by geometrical scaling of the injector size for p- and n- type carriers. Simulations and electrical and optical characteristics of our realized devices support our findings. Reducing the injector size decr

  5. Multi-THz spectroscopy of mobile charge carriers in P3HT:PCBM on a sub-100 fs time scale

    DEFF Research Database (Denmark)

    Cooke, David G.; Krebs, Frederik C; Jepsen, Peter Uhd

    2013-01-01

    The dynamics of mobile charge carrier generation in polymer bulk heterojunction films is of vital importance to the development of more efficient organic photovoltaics. As with conventional semiconductors, the optical signatures of mobile carriers lie in the far-infrared (1-30 THz) although...... spectroscopy of a polymer bulk heterojunction film P3HT:PCBM using a single-cycle, phase-locked and coherently detected multi-THz transient as a probe pulse following femtosecond excitation at 400 nm. By observing changes to the reflected THz transients from the film surface following photoexcitation, we can...

  6. Carbon quantum dot-based field-effect transistors and their ligand length-dependent carrier mobility.

    Science.gov (United States)

    Kwon, Woosung; Do, Sungan; Won, Dong Chan; Rhee, Shi-Woo

    2013-02-01

    We report electrical measurements of films of carbon quantum dots (CQDs) that serve as the channels of field-effects transistors (FETs). To investigate the dependence of the field-effect mobility on ligand length, colloidal CQDs are synthesized and ligand-exchanged with several primary amines of different ligand lengths. We measure current as a function of gate voltage and find that the devices show ambipolar conductivity, with electron and hole mobilities as high as 8.49 × 10(-5) and 3.88 × 10(-5) cm(2) V(-1) s(-1), respectively. The electron mobilities are consistently 2-4 times larger than the hole mobilities. Furthermore, the mobilities decrease exponentially with the increase of the ligand length, which is well-described by the Miller-Abrahams model for nearest-neighbor hopping. Our results provide a theoretical basis to examine charge transport in CQD films and offer new prospects for the fabrication of high-mobility CQD-based optoelectronic devices, including solar cells, light-emitting devices, and optical sensors.

  7. Recovery of synthetic dye from simulated wastewater using emulsion liquid membrane process containing tri-dodecyl amine as a mobile carrier

    Energy Technology Data Exchange (ETDEWEB)

    Othman, N., E-mail: norasikin@cheme.utm.my [Faculty of Chemical Engineering, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor (Malaysia); Zailani, S.N.; Mili, N. [Faculty of Chemical Engineering, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor (Malaysia)

    2011-12-30

    Highlights: Black-Right-Pointing-Pointer The emulsion liquid membrane process for synthetic reactive dyes recovery was examined. Black-Right-Pointing-Pointer Mobile carriers of tri-dodycylamine and salicyclic acid was used in formulation to remove the reactive dyes from simulated wastewater. Black-Right-Pointing-Pointer Almost 100% of dye was extracted and recovered in receiving phase. Black-Right-Pointing-Pointer An electrical field was used to breakdown the emulsion to separate the liquid membrane and receiving/recovery phase. - Abstract: The extraction of Red 3BS reactive dye from aqueous solution was studied using emulsion liquid membrane (ELM). ELM is one of the processes that have very high potential in treating industrial wastewater consisting of dyes. In this research, Red 3BS reactive dye was extracted from simulated wastewater using tridodecylamine (TDA) as the carrier agent, salicyclic acid (SA) to protonate TDA, sodium chloride as the stripping agent, kerosene as the diluent and SPAN 80 as emulsifier. Experimental parameters investigated were salicyclic acid concentration, extraction time, SPAN 80 concentration, sodium chloride concentration, TDA concentration, agitation speed, homogenizer speed, emulsifying time and treat ratio. The results show almost 100% of Red 3BS was removed and stripped in the receiving phase at the optimum condition in this ELM system. High voltage coalesce was applied to break the emulsion hence, enables recovery of Red 3BS in the receiving phase.

  8. Mobility and Student Achievement in High Poverty Schools

    Science.gov (United States)

    Dalton, Janet Denise

    2013-01-01

    Student mobility is an issue for high poverty schools in the shadow of increased rigor and accountability for student performance. Whereas mobility is not a sole cause for poor achievement, it is a contributing factor for students in poverty who are already considered to be at risk of low achievement. Student mobility creates a hardship for…

  9. A Mobile Learning Module for High School Fieldwork

    Science.gov (United States)

    Hsu, Tzu-Yen; Chen, Che-Ming

    2010-01-01

    Although fieldwork is always cited as an important component of geographic education, there are many obstacles for executing high school fieldwork. Mobile electronic products are becoming popular and some schools are able to acquire these devices for mobile learning. This study attempts to provide a mobile-assisted means of guiding students…

  10. Mobility and Student Achievement in High Poverty Schools

    Science.gov (United States)

    Dalton, Janet Denise

    2013-01-01

    Student mobility is an issue for high poverty schools in the shadow of increased rigor and accountability for student performance. Whereas mobility is not a sole cause for poor achievement, it is a contributing factor for students in poverty who are already considered to be at risk of low achievement. Student mobility creates a hardship for…

  11. A high-mobility electronic system at an electrolyte-gated oxide surface

    Science.gov (United States)

    Gallagher, Patrick; Lee, Menyoung; Petach, Trevor A.; Stanwyck, Sam W.; Williams, James R.; Watanabe, Kenji; Taniguchi, Takashi; Goldhaber-Gordon, David

    2015-03-01

    Electrolyte gating is a powerful technique for accumulating large carrier densities at a surface. Yet this approach suffers from significant sources of disorder: electrochemical reactions can damage or alter the sample, and the ions of the electrolyte and various dissolved contaminants sit Angstroms from the electron system. Accordingly, electrolyte gating is well suited to studies of superconductivity and other phenomena robust to disorder, but of limited use when reactions or disorder must be avoided. Here we demonstrate that these limitations can be overcome by protecting the sample with a chemically inert, atomically smooth sheet of hexagonal boron nitride. We illustrate our technique with electrolyte-gated strontium titanate, whose mobility when protected with boron nitride improves more than 10-fold while achieving carrier densities nearing 1014 cm-2. Our technique is portable to other materials, and should enable future studies where high carrier density modulation is required but electrochemical reactions and surface disorder must be minimized.

  12. Cooperative Transmission in Mobile Wireless Sensor Networks with Multiple Carrier Frequency Offsets: A Double-Differential Approach

    Directory of Open Access Journals (Sweden)

    Kun Zhao

    2014-01-01

    Full Text Available As a result of the rapidly increasing mobility of sensor nodes, mobile wireless sensor networks (MWSNs would be subject to multiple carrier frequency offsets (MCFOs, which result in time-varying channels and drastically degrade the network performance. To enhance the performance of such MWSNs, we propose a relay selection (RS based double-differential (DD cooperative transmission scheme, termed RSDDCT, in which the best relay sensor node is selected to forward the source sensor node’s signals to the destination sensor node with the detect-and-forward (DetF protocol. Assuming a Rayleigh fading environment, first, exact closed-form expressions for the outage probability and average bit error rate (BER of the RSDDCT scheme are derived. Then, simple and informative asymptotic outage probability and average BER expressions at the large signal-to-noise ratio (SNR regime are presented, which reveal that the RSDDCT scheme can achieve full diversity. Furthermore, the optimum power allocation strategy in terms of minimizing the average BER is investigated, and simple analytical solutions are obtained. Simulation results demonstrate that the proposed RSDDCT scheme can achieve excellent performance over fading channels in the presence of unknown random MCFOs. It is also shown that the proposed optimum power allocation strategy offers substantial average BER performance improvement over the equal power allocation strategy.

  13. High sensitivity field asymmetric ion mobility spectrometer

    Science.gov (United States)

    Chavarria, Mario A.; Matheoud, Alessandro V.; Marmillod, Philippe; Liu, Youjiang; Kong, Deyi; Brugger, Jürgen; Boero, Giovanni

    2017-03-01

    A high sensitivity field asymmetric ion mobility spectrometer (FAIMS) was designed, fabricated, and tested. The main components of the system are a 10.6 eV UV photoionization source, an ion filter driven by a high voltage/high frequency n-MOS inverter circuit, and a low noise ion detector. The ion filter electronics are capable to generate square waveforms with peak-to-peak voltages up to 1000 V at frequencies up to 1 MHz with adjustable duty cycles. The ion detector current amplifier has a gain up to 1012 V/A with an effective equivalent input noise level down to about 1 fA/Hz1/2 during operation with the ion filter at the maximum voltage and frequency. The FAIMS system was characterized by detecting different standard chemical compounds. Additionally, we investigated the use of a synchronous modulation/demodulation technique to improve the signal-to-noise ratio in FAIMS measurements. In particular, we implemented the modulation of the compensation voltage with the synchronous demodulation of the ion current. The analysis of the measurements at low concentration levels led to an extrapolated limit of detection for acetone of 10 ppt with an averaging time of 1 s.

  14. Targeted carrier screening for four recessive disorders: high detection rate within a founder population.

    Science.gov (United States)

    Mathijssen, Inge B; Henneman, Lidewij; van Eeten-Nijman, Janneke M C; Lakeman, Phillis; Ottenheim, Cecile P E; Redeker, Egbert J W; Ottenhof, Winnie; Meijers-Heijboer, Hanne; van Maarle, Merel C

    2015-03-01

    In a genetically isolated community in the Netherlands four severe recessive genetic disorders occur at relatively high frequency (pontocerebellar hypoplasia type 2 (PCH2), fetal akinesia deformation sequence (FADS), rhizomelic chondrodysplasia punctata type 1 (RCDP1), and osteogenesis imperfecta (OI) type IIB/III. Over the past decades multiple patients with these disorders have been identified. This warranted the start of a preconception outpatient clinic, in 2012, aimed at couples planning a pregnancy. The aim of our study was to evaluate the offer of targeted genetic carrier screening as a method to identify high-risk couples for having affected offspring in this high-risk subpopulation. In one year, 203 individuals (92 couples and 19 individuals) were counseled. In total, 65 of 196 (33.2%) tested individuals were carriers of at least one disease, five (7.7%) of them being carriers of two diseases. Carrier frequencies of PCH2, FADS, RCDP1, and OI were 14.3%, 11.2%, 6.1%, and 4.1% respectively. In individuals with a positive family history for one of the diseases, the carrier frequency was 57.8%; for those with a negative family history this was 25.8%. Four PCH2 carrier-couples were identified. Thus, targeted (preconception) carrier screening in this genetically isolated population in which a high prevalence of specific disorders occurs detects a high number of carriers, and is likely to be more effective compared to cascade genetic testing. Our findings and set-up can be seen as a model for carrier screening in other high-risk subpopulations and contributes to the discussion about the way carrier screening can be offered and organized in the general population.

  15. High Efficiency and Light Mobile Electronic Business System Based on Mobile Agent Middleware

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yunyong; LIU Jinde

    2004-01-01

    Mobile Network technology has been being the research focus during the 1990's.The middleware technology is imported for the sake of running distributed transaction smoothly.In this paper,a mobile agent based middleware high efficiency mobile electronic business oriented middleware (HEMEBOM) is designed and implemented based on the requirement and background of collaborative electronic business.Its architecture,elements and excellent properties are mainly focused.Then high efficiency mobile electronic business systemμMcommerce is built using HEMEBOM.

  16. Charge carrier mobilities in organic semiconductor crystals based on the spectral overlap.

    Science.gov (United States)

    Stehr, Vera; Fink, Reinhold F; Deibel, Carsten; Engels, Bernd

    2016-09-05

    The prediction of substance-related charge-transport properties is important for the tayloring of new materials for organic devices, such as organic solar cells. Assuming a hopping process, the Marcus theory is frequently used to model charge transport. Here another approach, which is already widely used for exciton transport, is adapted to charge transport. It is based on the spectral overlap of the vibrational donor and acceptor spectra. As the Marcus theory it is derived from Fermi's Golden rule, however, it contains less approximations, as the molecular vibrations are treated quantum mechanically. In contrast, the Marcus theory reduces all vibrational degrees of freedom to one and treats its influence classically. The approach is tested on different acenes and predicts most of the experimentally available hole mobilities in these materials within a factor of 2. This represents a significant improvement to values obtained from Marcus theory which is qualitatively correct but frequently overestimates the mobilities by factors up to 10. Furthermore, the charge-transport properties of two derivatives of perylene bisimide are investigated. © 2016 Wiley Periodicals, Inc.

  17. Aharonov-Bohm interference in gate-defined ring of high-mobility graphene

    Science.gov (United States)

    Kim, Minsoo; Lee, Hu-Jong

    2015-03-01

    Recent progress in preparing a high-quality graphene layer enables one to investigate the intrinsic carrier transport nature in the material. Here, we report the signature of conservation of the Berry's phase with preserved valley symmetry in Aharonov-Bohm (AB) interferometers fabricated on monolayer graphene with high carrier mobility, where the graphene was sandwiched between two thin hexagonal boron nitride (h-BN) layers. In measurements, charge carriers were confined in an AB ring-shaped potential well formed by the dual-gate operation of the bottom and top gates and the four-terminal magneto-conductance (MC) was measured with varying charge carrier density and temperature. Graphene in the device was in the ballistic regime as confirmed by the conductance quantization in steps of ΔG = 4e2/ h in a constricted conducting channel of separate measurements. We observed h/e periodic modulation of MC and the zero-field conductance minimum with a negative MC background. The phase information of AB interference strongly suggests that carriers in the graphene in our devices preserve the intrinsic Dirac transport nature, which would be conveniently utilized for valleytronics in graphene.

  18. Low Temperature Photoluminescence (PL) from High Electron Mobility Transistors (HEMTs)

    Science.gov (United States)

    2015-03-01

    TECHNICAL REPORT RDMR-WD-14-55 LOW TEMPERATURE PHOTOLUMINESCENCE (PL) FROM HIGH ELECTRON MOBILITY TRANSISTORS (HEMTS...DATE March 2015 3. REPORT TYPE AND DATES COVERED Final 4. TITLE AND SUBTITLE Low Temperature Photoluminescence (PL) From High Electron...temperature Photoluminescence (PL) from High Electron Mobility Transistor (HEMT) structures that have been modified by proton irradiation. The samples are

  19. Percolation of Carbon Nanoparticles in Poly(3-Hexylthiophene Enhancing Carrier Mobility in Organic Thin Film Transistors

    Directory of Open Access Journals (Sweden)

    Chang-Hung Lee

    2014-01-01

    Full Text Available To improve the field-effect mobility of all-inkjet-printed organic thin film transistors (OTFTs, a composite material consisted of carbon nanoparticles (CNPs and poly(3-hexylthiophene (P3HT was reported by using homemade inkjet-printing system. These all-inkjet-printed composite OTFTs represented superior characteristics compared to the all-inkjet-printed pristine P3HT OTFTs. To investigate the enhancement mechanism of the blended materials, the percolation model was established and experimentally verified to illustrate the enhancement of the electrical properties with different blending concentrations. In addition, experimental results of OTFT contact resistances showed that both contact resistance and channel resistance were halved. At the same time, X-ray diffraction measurements, Fourier transform infrared spectra, ultraviolet-visible light, and photoluminescence spectra were also accomplished to clarify the material blending effects. Therefore, this study demonstrates the potential and guideline of carbon-based nanocomposite materials in all-inkjet-printed organic electronics.

  20. A Highly Secure Mobile Agent System Architecture

    Science.gov (United States)

    Okataku, Yasukuni; Okutomi, Hidetoshi; Yoshioka, Nobukazu; Ohgishi, Nobuyuki; Honiden, Shinichi

    We propose a system architecture for mobile agents to improve their security in the environments of insecure networks and non-sophisticated terminals such as PDAs. As mobile agents freely migrate onto their favorite terminals through insecure networks or terminals, it is not appropriate for them to store some secret information for authentication and encryption/decryption. We introduce one and more secure nodes(OASIS NODE) for securely generating and verifying authentication codes. The each agent’s data are encrypted by a pseudo-chaos cipher mechanism which doesn’t need any floating processing co-processor. We’ve constructed a prototype system on a Java mobile agent framework, “Bee-gent" which implements the proposed authentication and cipher mechanisms, and evaluated their performances and their applicability to business fields such as an auction system by mobile agents.

  1. High-Mobility Aligned Pentacene Films Grown by Zone-Casting

    DEFF Research Database (Denmark)

    Duffy, Claudia M.; Andreasen, Jens Wenzel; Breiby, Dag W.;

    2008-01-01

    We investigate the growth and field-effect transistor performance of aligned pentacene thin films deposited by zone-casting from a solution of unsubstituted pentacene molecules in a chlorinated solvent. Polarized optical microscopy shows that solution processed pentacene films grow as large......-of-plane 00n reflections up to at least the seventh order, and a pronounced in-plane anisotropy with the a-axis of the triclinic unit cell predominantly aligned parallel to the zone-casting direction and the ab-plane parallel to the substrate. The average charge carrier mobility of the zone-cast pentacene...... devices depends strongly on the underlying dielectric. Divinylsiloxane-bis-benzocyclobutene (BCB) resin is found to be a suitable gate dielectric allowing reproducible film deposition and high field-effect mobilities up to 0.4−0.7 cm2/(V s) and on/off ratios of 106−107. A small mobility anisotropy...

  2. Dithiopheneindenofluorene (TIF) Semiconducting Polymers with Very High Mobility in Field-Effect Transistors

    KAUST Repository

    Chen, Hu

    2017-07-19

    The charge-carrier mobility of organic semiconducting polymers is known to be enhanced when the energetic disorder of the polymer is minimized. Fused, planar aromatic ring structures contribute to reducing the polymer conformational disorder, as demonstrated by polymers containing the indacenodithiophene (IDT) repeat unit, which have both a low Urbach energy and a high mobility in thin-film-transistor (TFT) devices. Expanding on this design motif, copolymers containing the dithiopheneindenofluorene repeat unit are synthesized, which extends the fused aromatic structure with two additional phenyl rings, further rigidifying the polymer backbone. A range of copolymers are prepared and their electrical properties and thin-film morphology evaluated, with the co-benzothiadiazole polymer having a twofold increase in hole mobility when compared to the IDT analog, reaching values of almost 3 cm2 V−1 s−1 in bottom-gate top-contact organic field-effect transistors.

  3. Determination of minority-carrier lifetime and surface recombination velocity with high spacial resolution

    Science.gov (United States)

    Watanabe, M.; Actor, G.; Gatos, H. C.

    1977-01-01

    Quantitative analysis of the electron beam induced current in conjunction with high-resolution scanning makes it possible to evaluate the minority-carrier lifetime three dimensionally in the bulk and the surface recombination velocity two dimensionally, with a high spacial resolution. The analysis is based on the concept of the effective excitation strength of the carriers which takes into consideration all possible recombination sources. Two-dimensional mapping of the surface recombination velocity of phosphorus-diffused silicon diodes is presented as well as a three-dimensional mapping of the changes in the minority-carrier lifetime in ion-implanted silicon.

  4. Slow cooling and highly efficient extraction of hot carriers in colloidal perovskite nanocrystals

    Science.gov (United States)

    Li, Mingjie; Bhaumik, Saikat; Goh, Teck Wee; Kumar, Muduli Subas; Yantara, Natalia; Grätzel, Michael; Mhaisalkar, Subodh; Mathews, Nripan; Sum, Tze Chien

    2017-02-01

    Hot-carrier solar cells can overcome the Schottky-Queisser limit by harvesting excess energy from hot carriers. Inorganic semiconductor nanocrystals are considered prime candidates. However, hot-carrier harvesting is compromised by competitive relaxation pathways (for example, intraband Auger process and defects) that overwhelm their phonon bottlenecks. Here we show colloidal halide perovskite nanocrystals transcend these limitations and exhibit around two orders slower hot-carrier cooling times and around four times larger hot-carrier temperatures than their bulk-film counterparts. Under low pump excitation, hot-carrier cooling mediated by a phonon bottleneck is surprisingly slower in smaller nanocrystals (contrasting with conventional nanocrystals). At high pump fluence, Auger heating dominates hot-carrier cooling, which is slower in larger nanocrystals (hitherto unobserved in conventional nanocrystals). Importantly, we demonstrate efficient room temperature hot-electrons extraction (up to ~83%) by an energy-selective electron acceptor layer within 1 ps from surface-treated perovskite NCs thin films. These insights enable fresh approaches for extremely thin absorber and concentrator-type hot-carrier solar cells.

  5. Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures

    Science.gov (United States)

    Schöche, S.; Shi, Junxia; Boosalis, A.; Kühne, P.; Herzinger, C. M.; Woollam, J. A.; Schaff, W. J.; Eastman, L. F.; Schubert, M.; Hofmann, T.

    2011-02-01

    The free-charge carrier mobility, sheet density, and effective mass of a two-dimensional electron gas are exemplarily determined in the spectral range from 640 GHz to 1 THz in a AlGaN/GaN heterostructure using the optical-Hall effect at room temperature. Complementary midinfrared spectroscopic ellipsometry measurements are performed for analysis of heterostructure constituents layer thickness, phonon mode, and free-charge carrier parameters. The electron effective mass is determined to be (0.22±0.04)m0. The high-frequency sheet density and carrier mobility parameters are in good agreement with results from dc electrical Hall effect measurements, indicative for frequency-independent carrier scattering mechanisms of the two-dimensional carrier distribution.

  6. Negative differential mobility for negative carriers as revealed by space charge measurements on crosslinked polyethylene insulated model cables

    Science.gov (United States)

    Teyssedre, G.; Vu, T. T. N.; Laurent, C.

    2015-12-01

    Among features observed in polyethylene materials under relatively high field, space charge packets, consisting in a pulse of net charge that remains in the form of a pulse as it crosses the insulation, are repeatedly observed but without complete theory explaining their formation and propagation. Positive charge packets are more often reported, and the models based on negative differential mobility(NDM) for the transport of holes could account for some charge packets phenomenology. Conversely, NDM for electrons transport has never been reported so far. The present contribution reports space charge measurements by pulsed electroacoustic method on miniature cables that are model of HVDC cables. The measurements were realized at room temperature or with a temperature gradient of 10 °C through the insulation under DC fields on the order 30-60 kV/mm. Space charge results reveal systematic occurrence of a negative front of charges generated at the inner electrode that moves toward the outer electrode at the beginning of the polarization step. It is observed that the transit time of the front of negative charge increases, and therefore the mobility decreases, with the applied voltage. Further, the estimated mobility, in the range 10-14-10-13 m2 V-1 s-1 for the present results, increases when the temperature increases for the same condition of applied voltage. The features substantiate the hypothesis of negative differential mobility used for modelling space charge packets.

  7. High-Field-Effect Mobility of Low-Crystallinity Conjugated Polymers with Localized Aggregates.

    Science.gov (United States)

    Son, Sung Y; Kim, Yebyeol; Lee, Junwoo; Lee, Gang-Young; Park, Won-Tae; Noh, Yong-Young; Park, Chan E; Park, Taiho

    2016-07-01

    Charge carriers typically move faster in crystalline regions than in amorphous regions in conjugated polymers because polymer chains adopt a regular arrangement resulting in a high degree of π-π stacking in crystalline regions. In contrast, the random polymer chain orientation in amorphous regions hinders connectivity between conjugated backbones; thus, it hinders charge carrier delocalization. Various studies have attempted to enhance charge carrier transport by increasing crystallinity. However, these approaches are inevitably limited by the semicrystalline nature of conjugated polymers. Moreover, high-crystallinity conjugated polymers have proven inadequate for soft electronics applications because of their poor mechanical resilience. Increasing the polymer chain connectivity by forming localized aggregates via π-orbital overlap among several conjugated backbones in amorphous regions provides a more effective approach to efficient charge carrier transport. A simple strategy relying on the density of random copolymer alkyl side chains was developed to generate these localized aggregates. In this strategy, steric hindrance caused by these side chains was modulated to change their density. Interestingly, a random polymer exhibiting low alkyl side chain density and crystallinity displayed greatly enhanced field-effect mobility (1.37 cm(2)/(V·s)) compared with highly crystalline poly(3-hexylthiophene).

  8. Radiative recombination of localized excitons and mobility edge excitons in GaInNAs/GaAs quantum wells with strong carrier localization

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Q.X. [Physical Electronics and Photonics, Department of Physics, Chalmers University of Technology and Goeteborg University, SE-412 96 Goeteborg (Sweden)]. E-mail: zhao@fly.chalmers.se; Wang, S.M. [Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Goeteborg (Sweden); Wei, Y.Q. [Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Goeteborg (Sweden); Sadeghi, M. [Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Goeteborg (Sweden); Larsson, A. [Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Goeteborg (Sweden); Willander, M. [Physical Electronics and Photonics, Department of Physics, Chalmers University of Technology and Goeteborg University, SE-412 96 Goeteborg (Sweden)

    2005-06-20

    The radiative recombination in In{sub x}Ga{sub 1-x}N{sub 0.01}As{sub 0.99}/GaAs quantum well structures exhibiting strong carrier localization was investigated by optical spectroscopy. For In-concentration from 0 to 30%, the results indicate that the degree of carrier localization decreases with increasing In-concentration. At temperatures below 100 K, the mobility edge excitons as well as localized excitons are identified and their transitions energies strongly depend on the excitation intensity. At elevated temperatures the localized excitons become quenched. The temperature dependence of the photoluminescence emission energy shows different behaviors at different excitation intensities.

  9. Characterization of asymmetric electron and hole transport in a high-mobility semiconducting polymer

    Science.gov (United States)

    Wang, Liguo; Wang, Xinliang; Liu, Mengli; Cheng, Lingfei

    2017-01-01

    The electron and hole transport properties in a high-mobility n-type copolymer poly{[ N, N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diy1]-alt-5,5'-(2,2'-dithiophene)}[P(NDI2OD-T2), PolyeraActivInk™ N2200] are investigated. The electron mobility is observed to be more than two orders of magnitude higher than the hole mobility. The thickness-dependent current density versus voltage ( J- V) characteristics of N2200 electron-only and hole-only devices cannot be well described using the conventional mobility model. However, the thickness-dependent and temperature-dependent J- V characteristics of N2200 electron-only and hole-only devices can be accurately described using our recently introduced improved mobility model only with a single set of parameters. Within the improved model, the mobility depends on three important physical quantities: the temperature, carrier density, and electric field. For the semiconducting polymer studied, we find the width of the Gaussian density of states σ = 0.082 eV and the lattice constant a = 0.8 nm for electron transport, while the width of the Gaussian density of states σ = 0.11 eV and the lattice constant a = 0.8 nm for hole transport. It is clear that hole transport exhibits a significantly stronger disorder than electron transport. This is also reflected in the lower hole mobility, as compared to the electron mobility.

  10. Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

    Science.gov (United States)

    Morrison, C.; Casteleiro, C.; Leadley, D. R.; Myronov, M.

    2016-09-01

    The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm2/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m0. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.

  11. Simultaneously improving electrical conductivity and thermopower of polyaniline composites by utilizing carbon nanotubes as high mobility conduits.

    Science.gov (United States)

    Wang, Hong; Yi, Su-in; Pu, Xiong; Yu, Choongho

    2015-05-13

    Electrical conductivity and thermopower of isotropic materials typically have inversely proportional correlation because both are strongly affected in the opposite way by the electronic carrier concentration. This behavior has been one of the major hurdles in developing high-performance thermoelectrics whose figure-of-merit enhances with large thermopower and high electrical conductivity. Here we report a promising method of simultaneously improving both properties with polyaniline (PANI) composites filled by carbon nanotubes (CNTs). With addition of double-wall CNTs (DWCNTs), the electronic mobility of PANI doped with camphorsulfonic acid (PANI-CSA) was raised from ∼0.15 to ∼7.3 cm(2)/(V s) (∼50 time improvement) while the carrier concentration was decreased from ∼2.1 × 10(21) to ∼5.6 × 10(20) cm(-3) (∼4 time reduction). The larger increase of mobility increased electrical conductivity despite the carrier concentration reduction that enlarges thermopower. The improvement in the carrier mobility could be attributed to the band alignment that attracts hole carriers to CNTs whose mobility is much higher than that of PANI-CSA. The electrical conductivity of the PANI-CSA composites with 30-wt % DWCNTs was measured to be ∼610 S/cm with a thermopower value of ∼61 μV/K at room temperature, resulting in a power factor value of ∼220 μW/(m K(2)), which is more than two orders higher than that of PANI-CSA as well as the highest among those of the previously reported PANI composites. Further study may result in high performance thermoelectric organic composites uniquely offering mechanical flexibility, light weight, low toxicity, and easy manufacturing. unlike conventional inorganic semiconductors.

  12. Coexistence of Dirac and massive carriers in α-(BEDT-TTF){sub 2}I{sub 3} under hydrostatic pressure

    Energy Technology Data Exchange (ETDEWEB)

    Navarin, Fabien; Tisserond, Emilie [Laboratoire de Physique des Solides, UMR 8502, CNRS-Université Paris-Sud, Orsay F-91405 (France); Auban-Senzier, Pascale, E-mail: pascale.senzier@u-psud.fr [Laboratoire de Physique des Solides, UMR 8502, CNRS-Université Paris-Sud, Orsay F-91405 (France); Mézière, Cécile; Batail, Patrick [MOLTECH-Anjou, UMR 6200, CNRS-Université d' Angers, Bat. K, Angers F-49045 (France); Pasquier, Claude; Monteverde, Miguel [Laboratoire de Physique des Solides, UMR 8502, CNRS-Université Paris-Sud, Orsay F-91405 (France)

    2015-03-01

    We present magnetotransport measurements of α-(BEDT-TTF){sub 2}I{sub 3} crystals under hydrostatic pressure larger than 1.5 GPa where Dirac carriers are present. We show not only the existence of high-mobility Dirac carriers but we also prove experimentally the presence of low-mobility massive carriers, in agreement with band-structure calculations.

  13. Conductance fluctuations in high mobility monolayer graphene: Nonergodicity, lack of determinism and chaotic behavior

    Science.gov (United States)

    da Cunha, C. R.; Mineharu, M.; Matsunaga, M.; Matsumoto, N.; Chuang, C.; Ochiai, Y.; Kim, G.-H.; Watanabe, K.; Taniguchi, T.; Ferry, D. K.; Aoki, N.

    2016-09-01

    We have fabricated a high mobility device, composed of a monolayer graphene flake sandwiched between two sheets of hexagonal boron nitride. Conductance fluctuations as functions of a back gate voltage and magnetic field were obtained to check for ergodicity. Non-linear dynamics concepts were used to study the nature of these fluctuations. The distribution of eigenvalues was estimated from the conductance fluctuations with Gaussian kernels and it indicates that the carrier motion is chaotic at low temperatures. We argue that a two-phase dynamical fluid model best describes the transport in this system and can be used to explain the violation of the so-called ergodic hypothesis found in graphene.

  14. Negative differential mobility for negative carriers as revealed by space charge measurements on crosslinked polyethylene insulated model cables

    Energy Technology Data Exchange (ETDEWEB)

    Teyssedre, G., E-mail: gilbert.teyssedre@laplace.univ-tlse.fr; Laurent, C. [Université de Toulouse, UPS, INPT, LAPLACE (Laboratoire Plasma et Conversion d' Energie), 118 route de Narbonne, F-31062 Toulouse cedex 9 (France); CNRS, LAPLACE, F-31062 Toulouse (France); Vu, T. T. N. [Université de Toulouse, UPS, INPT, LAPLACE (Laboratoire Plasma et Conversion d' Energie), 118 route de Narbonne, F-31062 Toulouse cedex 9 (France); Electric Power University, 235 Hoang Quoc Viet, 10000 Hanoi (Viet Nam)

    2015-12-21

    Among features observed in polyethylene materials under relatively high field, space charge packets, consisting in a pulse of net charge that remains in the form of a pulse as it crosses the insulation, are repeatedly observed but without complete theory explaining their formation and propagation. Positive charge packets are more often reported, and the models based on negative differential mobility(NDM) for the transport of holes could account for some charge packets phenomenology. Conversely, NDM for electrons transport has never been reported so far. The present contribution reports space charge measurements by pulsed electroacoustic method on miniature cables that are model of HVDC cables. The measurements were realized at room temperature or with a temperature gradient of 10 °C through the insulation under DC fields on the order 30–60 kV/mm. Space charge results reveal systematic occurrence of a negative front of charges generated at the inner electrode that moves toward the outer electrode at the beginning of the polarization step. It is observed that the transit time of the front of negative charge increases, and therefore the mobility decreases, with the applied voltage. Further, the estimated mobility, in the range 10{sup −14}–10{sup −13} m{sup 2} V{sup −1} s{sup −1} for the present results, increases when the temperature increases for the same condition of applied voltage. The features substantiate the hypothesis of negative differential mobility used for modelling space charge packets.

  15. Compact Layer Free Perovskite Solar Cells with a High-Mobility Hole-Transporting Layer.

    Science.gov (United States)

    Zhu, Qianqian; Bao, Xichang; Yu, Jianhua; Zhu, Dangqiang; Qiu, Meng; Yang, Renqiang; Dong, Lifeng

    2016-02-03

    A high-mobility diketopyrrolopyrrole-based copolymer (P) was employed in compact layer free CH3NH3PbI3 perovskite solar cells as a hole-transporting layer (HTL). By using the P-HTL, the 6.62% device efficiency with conventional poly-3-hexylthiophene was increased to 10.80% in the simple device configuration (ITO/CH3NH3PbI3/HTL/MoO3/Ag). With improved short circuit current density, open circuit voltage, and fill factor, the higher power conversion efficiency of P-HTL device is ascribed to the higher carrier mobility, more suitable energy level, and lower interfacial charge recombination. Advantages of applying P-HTL to perovskite solar cells, such as low cost, low-temperature processing, and excellent performance with simple cell structure, exhibit a possibility for commercial applications.

  16. Data dissemination in the wild: A testbed for high-mobility MANETs

    DEFF Research Database (Denmark)

    Vingelmann, Peter; Pedersen, Morten Videbæk; Heide, Janus

    2012-01-01

    This paper investigates the problem of efficient data dissemination in Mobile Ad hoc NETworks (MANETs) with high mobility. A testbed is presented; which provides a high degree of mobility in experiments. The testbed consists of 10 autonomous robots with mobile phones mounted on them. The mobile...

  17. Anisotropic mobility and carrier dynamics in the β-type BEDT-TTF salts as studied by inter-layer transverse magnetoresistance

    Directory of Open Access Journals (Sweden)

    Shigeharu Sugawara and Masafumi Tamura

    2013-01-01

    Full Text Available A new method to estimate an in-plane conduction anisotropy in a quasi-two-dimensional (q2D layered conductor by measuring the inter-layer transverse magnetoresistance is proposed. We applied this method to layered organic conductors β-(BEDT-TTF2X (BEDT-TTF = bis(ethylenedithiotetrathiafulvalene, C10H8S8; X = IBr2, I2Br by applying magnetic field rotating within the basal plane at 4.2 K. We found the anisotropic behaviour of carrier mobility μ. From this, anomalous distribution of carrier lifetime τ on the Fermi surface is derived, by the use of Fermi surface data reported for the materials. Calculations of the non-uniform susceptibility χ0(q suggest that carrier scattering is enhanced at specific k-points related to partial nesting of the Fermi surface. The present method is thus demonstrated to be an efficient experimental tool to elucidate anisotropic carrier dynamics in q2D conductors.

  18. A highly innovative global broadband mobile communication system concept

    Science.gov (United States)

    Wittig, Manfred

    2010-04-01

    Global mobile communication systems deployed in the 1990s (Iridium and Globalstar) failed to achieve the expected market success. However, recently a second generation of these two LEO constellations have been or will be procured. This shows evidence that global mobile satellite communications are attractive for a certain class of users. Basic requirements for mobile satellite communication networks are global coverage at high elevation angles, continuous availability and most important attractive service offers. For the first two reasons LEO constellations were designed and deployed. The large number of required satellites (remember the original Teledesic concept was designed containing 860 satellites) increases the CAPEX and consequently the service cost. This is probably the major reason for the limited commercial success of Iridium and Globalstar. An ideal global mobile (broadband) communication system shall provide global coverage at high elevation angles (not below e.g. 30°) with the lowest number of satellites. This seems to be contradictory. However, a solution will be presented that achieves global coverage which requires only five satellites and achieves high elevation angles even at polar locations. This orbit constellation is to be complemented with innovative payloads to achieve cost efficient broadband mobile services all over the Globe. Innovative L/S-band payload concepts will be introduced as well as Ka-band payloads.

  19. Liquid-Gated High Mobility and Quantum Oscillation of the Two-Dimensional Electron Gas at an Oxide Interface.

    Science.gov (United States)

    Zeng, Shengwei; Lü, Weiming; Huang, Zhen; Liu, Zhiqi; Han, Kun; Gopinadhan, Kalon; Li, Changjian; Guo, Rui; Zhou, Wenxiong; Ma, Haijiao Harsan; Jian, Linke; Venkatesan, Thirumalai; Ariando

    2016-04-26

    Electric field effect in electronic double layer transistor (EDLT) configuration with ionic liquids as the dielectric materials is a powerful means of exploring various properties in different materials. Here, we demonstrate the modulation of electrical transport properties and extremely high mobility of two-dimensional electron gas at LaAlO3/SrTiO3 (LAO/STO) interface through ionic liquid-assisted electric field effect. With a change of the gate voltages, the depletion of charge carrier and the resultant enhancement of electron mobility up to 19 380 cm(2)/(V s) are realized, leading to quantum oscillations of the conductivity at the LAO/STO interface. The present results suggest that high-mobility oxide interfaces, which exhibit quantum phenomena, could be obtained by ionic liquid-assisted field effect.

  20. Compact analytical model for single gate AlInSb/InSb high electron mobility transistors

    Institute of Scientific and Technical Information of China (English)

    S.Theodore Chandra; N.B.Balamurugan; G.Subalakshmi; T.Shalini; G.Lakshmi Priya

    2014-01-01

    We have developed a 2D analytical model for the single gate AlInSb/InSb HEMT device by solving the Poisson equation using the parabolic approximation method.The developed model analyses the device performance by calculating the parameters such as surface potential,electric field distribution and drain current.The high mobility of the AlInSb/InSb quantum makes this HEMT ideal for high frequency,high power applications.The working of the single gate AlInSb/InSb HEMT device is studied by considering the variation of gate source voltage,drain source voltage,and channel length under the gate region and temperature.The carrier transport efficiency is improved by uniform electric field along the channel and the peak values near the source and drain regions.The results from the analytical model are compared with that of numerical simulations (TCAD) and a good agreement between them is achieved.

  1. Charge transfer polarisation wave and carrier pairing in the high T(sub c) copper oxides

    Science.gov (United States)

    Chakraverty, B. K.

    1990-01-01

    The High T(sub c) oxides are highly polarizable materials and are charge transfer insulators. The charge transfer polarization wave formalism is developed in these oxides. The dispersion relationships due to long range dipole-dipole interaction of a charge transfer dipole lattice are obtained in 3-D and 2-D. These are high frequency bosons and their coupling with carriers is weak and antiadiabatic in nature. As a result, the mass renormalization of the carriers is negligible in complete contrast to conventional electron-phonon interaction, that give polarons and bipolarons. Both bound and superconducting pairing is discussed for a model Hamiltonian valid in the antiadiabatic regime, both in 3-D and 2-D. The stability of the charge transfer dipole lattice has interesting consequences that are discussed.

  2. Carrier mobility in double-helix DNA and RNA: A quantum chemistry study with Marcus-Hush theory

    Science.gov (United States)

    Wu, Tao; Sun, Lei; Shi, Qi; Deng, Kaiming; Deng, Weiqiao; Lu, Ruifeng

    2016-12-01

    Charge mobilities of six DNAs and RNAs have been computed using quantum chemistry calculation combined with the Marcus-Hush theory. Based on this simulation model, we obtained quite reasonable results when compared with the experiment, and the obtained charge mobility strongly depends on the molecular reorganization and electronic coupling. Besides, we find that hole mobilities are larger than electron mobilities no matter in DNAs or in RNAs, and the hole mobility of 2L8I can reach 1.09 × 10-1 cm2 V-1 s-1 which can be applied in the molecular wire. The findings also show that our theoretical model can be regarded as a promising candidate for screening DNA- and RNA-based molecular electronic devices.

  3. Carrier mobility in double-helix DNA and RNA: A quantum chemistry study with Marcus-Hush theory.

    Science.gov (United States)

    Wu, Tao; Sun, Lei; Shi, Qi; Deng, Kaiming; Deng, Weiqiao; Lu, Ruifeng

    2016-12-21

    Charge mobilities of six DNAs and RNAs have been computed using quantum chemistry calculation combined with the Marcus-Hush theory. Based on this simulation model, we obtained quite reasonable results when compared with the experiment, and the obtained charge mobility strongly depends on the molecular reorganization and electronic coupling. Besides, we find that hole mobilities are larger than electron mobilities no matter in DNAs or in RNAs, and the hole mobility of 2L8I can reach 1.09 × 10(-1) cm(2) V(-1) s(-1) which can be applied in the molecular wire. The findings also show that our theoretical model can be regarded as a promising candidate for screening DNA- and RNA-based molecular electronic devices.

  4. Dynamics of Below-Band-Gap Carrier in Highly Excited GaN

    Institute of Scientific and Technical Information of China (English)

    郭冰; 黄锦圣; 叶志镇; 江红星; 林景瑜

    2003-01-01

    Femtosecond time-resolved reflectivity was used to investigate below-band-gap (3.1 eV) carrier dynamics in a nominally undoped GaN epilayer under high excitation. A 2.5-ps rising process can be observed in the transient trace. This shot rising time results from the hot phonon effects which can cause a delayed energy relaxation of the initial photocarriers toward the band edge. From the density dependence of the carrier dynamics, the Mott density was estimated to be 1.51-1.56 × 1019 cm-3. Below the Mott density, the initial probed carrier dynamics was explained to the effect of acoustic phonon-assisted tunnelling for localized states, where a significant excitation density dependence of the tunnelling probability was observed due to the optically induced bandtail extension to lower energies. Above the Mott density, the measured carrier dynamics reflected the relaxation of an electron-hole plasma, in which a distinct fast decay component of 2.3 ps was observed due to the onset of nonlinear relaxation processes such Auger recombination.

  5. High Electron Mobility Transistors (HEMT). Selected Papers

    Science.gov (United States)

    2010-06-01

    would tend to compensate for this polarization charge and form a two-dimensional electron gas 2DEG.3 High performance AlInN/ GaN HEMT structures grown...profile across an Al0.85In0.15N /AlN / GaN HEMT structure. The position of the 2DEG has been located experimentally. The HEMT heterostructure was grown in...Al0.85In0.15N /AlN / GaN HEMT structure taken on the 1010 zone axis and the corresponding EDXS line profile are shown in Fig. 2. Abrupt Al0.85In0.15N /AlN and

  6. Mobility and trapping of hydrogen in high-strength steel

    OpenAIRE

    2013-01-01

    6 pages; International audience; Electrochemical permeation and thermo-desorption tests are performed to evaluate hydrogen mobility in high strength steel. Experimental parameters are used in a Krom like phenomenological diffusion model. This model is developed to simulate hydrogen diffusion and trapping in processing zones of specimens subjected to fatigue loadings.

  7. Method for producing high carrier concentration p-Type transparent conducting oxides

    Science.gov (United States)

    Li, Xiaonan; Yan, Yanfa; Coutts, Timothy J.; Gessert, Timothy A.; Dehart, Clay M.

    2009-04-14

    A method for producing transparent p-type conducting oxide films without co-doping plasma enhancement or high temperature comprising: a) introducing a dialkyl metal at ambient temperature and a saturated pressure in a carrier gas into a low pressure deposition chamber, and b) introducing NO alone or with an oxidizer into the chamber under an environment sufficient to produce a metal-rich condition to enable NO decomposition and atomic nitrogen incorporation into the formed transparent metal conducting oxide.

  8. Mobile learning and high-lighting language education

    DEFF Research Database (Denmark)

    Vinther, Jane

    advantage of the social side in their application. The aim has been to make language classes attractive and relevant and to highlight the attractiveness and fun in learning through web 2.0 and mobile units. The overall project was supported by the Danish ministry of education as well as the individual...... time and any firm conclusions cannot be reached until further analyses have been carried out, but will be ready by the time of the conference. It is clear at this point that, the potential imbued in mobile learning and social media have given rise to a strengthening of student participation......Mobile learning and high-profiling language education. The number of students learning a second or foreign language and participating in instruction in languages other than English has been in decline for some time. There seems to be such a general tendency across nations albeit for a variety...

  9. Drift-Diffusion Modeling of the Effects of Structural Disorder and Carrier Mobility on the Performance of Organic Photovoltaic Devices

    Science.gov (United States)

    Finck, Benjamin Y.; Schwartz, Benjamin J.

    2015-09-01

    We probe the effects of structural disorder on the performance of organic photovoltaic (OPV) devices via drift-diffusion modeling. We utilize ensembles of spatially disordered one-dimensional mobility profiles to approximate the three-dimensional structural disorder present in actual devices. Each replica in our ensemble approximates one high-conductivity pathway through the three-dimensional network(s) present in a polymer-based bulk heterojunction solar cell, so that the ensemble-averaged behavior provides a good approximation to a full three-dimensional structurally disordered device. Our calculations show that the short-circuit current, fill factor, and power conversion efficiency of simulated devices are all negatively impacted by the inclusion of structural disorder, but that the open-circuit voltage is nearly impervious to structural defects. This is in contrast to energetic disorder, where previous studies found that spatial variation in the energy in OPV active layers causes a decrease in the open-circuit voltage. We also show that structural disorder causes the greatest detriment to device performance for feature sizes between 2 and 10 nm. Since this is on the same length scale as the fullerene crystallites in experimental devices, it suggests both that controlling structural disorder is critical to the performance of OPV devices and that the effects of structural disorder should be included in future drift-diffusion modeling studies of organic solar cells.

  10. Ultrafast optical switching of infrared plasmon polaritons in high-mobility graphene

    Science.gov (United States)

    Ni, G. X.; Wang, L.; Goldflam, M. D.; Wagner, M.; Fei, Z.; McLeod, A. S.; Liu, M. K.; Keilmann, F.; Özyilmaz, B.; Castro Neto, A. H.; Hone, J.; Fogler, M. M.; Basov, D. N.

    2016-04-01

    The success of metal-based plasmonics for manipulating light at the nanoscale has been empowered by imaginative designs and advanced nano-fabrication. However, the fundamental optical and electronic properties of elemental metals, the prevailing plasmonic media, are difficult to alter using external stimuli. This limitation is particularly restrictive in applications that require modification of the plasmonic response at sub-picosecond timescales. This handicap has prompted the search for alternative plasmonic media, with graphene emerging as one of the most capable candidates for infrared wavelengths. Here we visualize and elucidate the properties of non-equilibrium photo-induced plasmons in a high-mobility graphene monolayer. We activate plasmons with femtosecond optical pulses in a specimen of graphene that otherwise lacks infrared plasmonic response at equilibrium. In combination with static nano-imaging results on plasmon propagation, our infrared pump-probe nano-spectroscopy investigation reveals new aspects of carrier relaxation in heterostructures based on high-purity graphene.

  11. High-mobility field-effect transistors from large-area solution-grown aligned C60 single crystals.

    Science.gov (United States)

    Li, Hanying; Tee, Benjamin C-K; Cha, Judy J; Cui, Yi; Chung, Jong Won; Lee, Sang Yoon; Bao, Zhenan

    2012-02-08

    Field-effect transistors based on single crystals of organic semiconductors have the highest reported charge carrier mobility among organic materials, demonstrating great potential of organic semiconductors for electronic applications. However, single-crystal devices are difficult to fabricate. One of the biggest challenges is to prepare dense arrays of single crystals over large-area substrates with controlled alignment. Here, we describe a solution processing method to grow large arrays of aligned C(60) single crystals. Our well-aligned C(60) single-crystal needles and ribbons show electron mobility as high as 11 cm(2)V(-1)s(-1) (average mobility: 5.2 ± 2.1 cm(2)V(-1)s(-1) from needles; 3.0 ± 0.87 cm(2)V(-1)s(-1) from ribbons). This observed mobility is ~8-fold higher than the maximum reported mobility for solution-grown n-channel organic materials (1.5 cm(2)V(-1)s(-1)) and is ~2-fold higher than the highest mobility of any n-channel organic material (~6 cm(2)V(-1)s(-1)). Furthermore, our deposition method is scalable to a 100 mm wafer substrate, with around 50% of the wafer surface covered by aligned crystals. Hence, our method facilitates the fabrication of large amounts of high-quality semiconductor crystals for fundamental studies, and with substantial improvement on the surface coverage of crystals, this method might be suitable for large-area applications based on single crystals of organic semiconductors.

  12. High mobility solution-processed hybrid light emitting transistors

    Energy Technology Data Exchange (ETDEWEB)

    Walker, Bright; Kim, Jin Young [School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology, Ulsan 689-798 (Korea, Republic of); Ullah, Mujeeb; Burn, Paul L.; Namdas, Ebinazar B., E-mail: e.namdas@uq.edu.au, E-mail: seojh@dau.ac.kr [Centre for Organic Photonics and Electronics, University of Queensland, Brisbane, Queensland 4072 (Australia); Chae, Gil Jo [Department of Materials Physics, Dong-A University, Busan 604-714 (Korea, Republic of); Department of Physics and EHSRC, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Cho, Shinuk [Department of Physics and EHSRC, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Seo, Jung Hwa, E-mail: e.namdas@uq.edu.au, E-mail: seojh@dau.ac.kr [Department of Materials Physics, Dong-A University, Busan 604-714 (Korea, Republic of)

    2014-11-03

    We report the design, fabrication, and characterization of high-performance, solution-processed hybrid (inorganic-organic) light emitting transistors (HLETs). The devices employ a high-mobility, solution-processed cadmium sulfide layer as the switching and transport layer, with a conjugated polymer Super Yellow as an emissive material in non-planar source/drain transistor geometry. We demonstrate HLETs with electron mobilities of up to 19.5 cm{sup 2}/V s, current on/off ratios of >10{sup 7}, and external quantum efficiency of 10{sup −2}% at 2100 cd/m{sup 2}. These combined optical and electrical performance exceed those reported to date for HLETs. Furthermore, we provide full analysis of charge injection, charge transport, and recombination mechanism of the HLETs. The high brightness coupled with a high on/off ratio and low-cost solution processing makes this type of hybrid device attractive from a manufacturing perspective.

  13. Metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiO(x) van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed.

    Science.gov (United States)

    Lee, Hee Sung; Baik, Seung Su; Lee, Kimoon; Min, Sung-Wook; Jeon, Pyo Jin; Kim, Jin Sung; Choi, Kyujin; Choi, Hyoung Joon; Kim, Jae Hoon; Im, Seongil

    2015-08-25

    Molybdenum disulfide (MoS2) nanosheet, one of two-dimensional (2D) semiconductors, has recently been regarded as a promising material to break through the limit of present semiconductors. With an apparent energy band gap, it certainly provides a high carrier mobility, superior subthreshold swing, and ON/OFF ratio in field-effect transistors (FETs). However, its potential in carrier mobility has still been depreciated since the field-effect mobilities have only been measured from metal-insulator-semiconductor (MIS) FETs, where the transport behavior of conducting carriers located at the insulator/MoS2 interface is unavoidably interfered by the interface traps and gate voltage. Moreover, thin MoS2 MISFETs have always shown large hysteresis with unpredictable negative threshold voltages. Here, we for the first time report MoS2-based metal semiconductor field-effect transistors (MESFETs) using NiOx Schottky electrode which makes van der Waals interface with MoS2. We thus expect that the maximum mobilities or carrier transport behavior of the Schottky devices may hardly be interfered by interface traps or an on-state gate field. Our MESFETs with a few and ∼10 layer MoS2 demonstrate intrinsic-like high mobilities of 500-1200 cm(2)/(V s) at a certain low threshold voltage between -1 and -2 V without much hysteresis. Moreover, they work as a high speed and highly sensitive phototransistor with 2 ms switching and ∼5000 A/W, respectively, supporting their high intrinsic mobility results.

  14. Strontium Insertion in Methylammonium Lead Iodide: Long Charge Carrier Lifetime and High Fill-Factor Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Pérez-del-Rey, Daniel [Instituto de Ciencia Molecular, Universidad de Valencia, C/J. Beltran 2 46980 Paterna Spain; Forgács, Dávid [Instituto de Ciencia Molecular, Universidad de Valencia, C/J. Beltran 2 46980 Paterna Spain; Hutter, Eline M. [Department of Chemical Engineering, Delft University of Technology, Van der Maasweg 9 2629 HZ Delft The Netherlands; Savenije, Tom J. [Department of Chemical Engineering, Delft University of Technology, Van der Maasweg 9 2629 HZ Delft The Netherlands; Nordlund, Dennis [Stanford Linear Accelerator Campus, Stanford Synchrotron Laboratory, Menlo Park CA 94025 USA; Schulz, Philip [National Center for Photovoltaics, National Renewable Energy Laboratory, 15013 Denver West Parkway Golden CO 80401 USA; Berry, Joseph J. [National Center for Photovoltaics, National Renewable Energy Laboratory, 15013 Denver West Parkway Golden CO 80401 USA; Sessolo, Michele [Instituto de Ciencia Molecular, Universidad de Valencia, C/J. Beltran 2 46980 Paterna Spain; Bolink, Henk J. [Instituto de Ciencia Molecular, Universidad de Valencia, C/J. Beltran 2 46980 Paterna Spain

    2016-09-22

    The addition of Sr2+ in CH3NH3PbI3 perovskite films enhances the charge carrier collection efficiency of solar cells leading to very high fill factors, up to 85%. The charge carrier lifetime of Sr2+-containing perovskites is in excess of 40 us, longer than those reported for perovskite single crystals.

  15. Mobile marketing for mobile games

    OpenAIRE

    Vu, Giang

    2016-01-01

    Highly developed mobile technology and devices enable the rise of mobile game industry and mobile marketing. Hence mobile marketing for mobile game is an essential key for a mobile game success. Even though there are many articles on marketing for mobile games, there is a need of highly understanding mobile marketing strategies, how to launch a mobile campaign for a mobile game. Besides that, it is essential to understand the relationship between mobile advertising and users behaviours. There...

  16. Carrier-wave Rabi-flopping signatures in high-order harmonic generation for alkali atoms.

    Science.gov (United States)

    Ciappina, M F; Pérez-Hernández, J A; Landsman, A S; Zimmermann, T; Lewenstein, M; Roso, L; Krausz, F

    2015-04-10

    We present a theoretical investigation of carrier-wave Rabi flopping in real atoms by employing numerical simulations of high-order harmonic generation (HHG) in alkali species. Given the short HHG cutoff, related to the low saturation intensity, we concentrate on the features of the third harmonic of sodium (Na) and potassium (K) atoms. For pulse areas of 2π and Na atoms, a characteristic unique peak appears, which, after analyzing the ground state population, we correlate with the conventional Rabi flopping. On the other hand, for larger pulse areas, carrier-wave Rabi flopping occurs, and is associated with a more complex structure in the third harmonic. These characteristics observed in K atoms indicate the breakdown of the area theorem, as was already demonstrated under similar circumstances in narrow band gap semiconductors.

  17. Carrier-wave Rabi flopping signatures in high-order harmonic generation for alkali atoms

    CERN Document Server

    Ciappina, M F; Landsman, A S; Zimmermann, T; Lewenstein, M; Roso, L; Krausz, F

    2015-01-01

    We present the first theoretical investigation of carrier-wave Rabi flopping in real atoms by employing numerical simulations of high-order harmonic generation (HHG) in alkali species. Given the short HHG cutoff, related to the low saturation intensity, we concentrate on the features of the third harmonic of sodium (Na) and potassium (K) atoms. For pulse areas of 2$\\pi$ and Na atoms, a characteristic unique peak appears, which, after analyzing the ground state population, we correlate with the conventional Rabi flopping. On the other hand, for larger pulse areas, carrier-wave Rabi flopping occurs, and is associated with a more complex structure in the third harmonic. These new characteristics observed in K atoms indicate the breakdown of the area theorem, as was already demonstrated under similar circumstances in narrow band gap semiconductors.

  18. First-principles hybrid functional study of the electronic structure and charge carrier mobility in perovskite CH3NH3SnI3

    Science.gov (United States)

    Wu, Li-Juan; Zhao, Yu-Qing; Chen, Chang-Wen; Wang, Lin-Zhi; Liu, Biao; Cai, Meng-Qiu

    2016-10-01

    We calculate the electronic properties and carrier mobility of perovskite CH3NH3SnI3 as a solar cell absorber by using the hybrid functional method. The calculated result shows that the electron and hole mobilities have anisotropies with a large magnitude of 1.4 × 104 cm2·V-1·s-1 along the y direction. In view of the huge difference between hole and electron mobilities, the perovskite CH3NH3SnI3 can be considered as a p-type semiconductor. We also discover a relationship between the effective mass anisotropy and electronic occupation anisotropy. The above results can provide reliable guidance for its experimental applications in electronics and optoelectronics. Project supported by the National Natural Science Foundation of China (Grant No. 51172067), the Hunan Provincial Natural Science Fund for Distinguished Young Scholars, China (Grant No. 13JJ1013), the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20130161110036), and the New Century Excellent Talents in University, China (Grant No. NCET-12-0171.D).

  19. A simple approach for producing highly efficient DNA carriers with reduced toxicity based on modified polyallylamine

    Energy Technology Data Exchange (ETDEWEB)

    Oskuee, Reza Kazemi [Neurogenic Inflammation Research Center, Mashhad University of Medical Sciences, Mashhad (Iran, Islamic Republic of); Department of Medical Biotechnology, School of Medicine, Mashhad University of Medical Sciences, Mashhad (Iran, Islamic Republic of); Dosti, Fatemeh [School of Pharmacy, Mashhad University of Medical Sciences, Mashhad (Iran, Islamic Republic of); Gholami, Leila [Targeted Drug Delivery Research Center, School of Medicine, Mashhad University of Medical Sciences, Mashhad (Iran, Islamic Republic of); Malaekeh-Nikouei, Bizhan, E-mail: malaekehb@mums.ac.ir [Nanotechnology Research Center, School of Pharmacy, Mashhad University of Medical Sciences, Mashhad (Iran, Islamic Republic of)

    2015-04-01

    Nowadays gene delivery is a topic in many research studies. Non-viral vectors have many advantages over viral vectors in terms of safety, immunogenicity and gene carrying capacity but they suffer from low transfection efficiency and high toxicity. In this study, polyallylamine (PAA), the cationic polymer, has been modified with hydrophobic branches to increase the transfection efficiency of the polymer. Polyallylamine with molecular weights of 15 and 65 kDa was selected and grafted with butyl, hexyl and decyl acrylate at percentages of 10, 30 and 50. The ability of the modified polymer to condense DNA was examined by ethidium bromide test. The complex of modified polymer and DNA (polyplex) was characterized for size, zeta potential, transfection efficiency and cytotoxicity in Neuro2A cell lines. The results of ethidium bromide test showed that grafting of PAA decreased its ability for DNA condensation but vectors could still condense DNA at moderate and high carrier to DNA ratios. Most of polyplexes had particle size between 150 and 250 nm. The prepared vectors mainly showed positive zeta potential but carriers composed of PAA with high percentage of grafting had negative zeta potential. The best transfection activity was observed in vectors with hexyl acrylate chain. Grafting of polymer reduced its cytotoxicity especially at percentages of 30 and 50. The vectors based of PAA 15 kDa had better transfection efficiency than the vectors made of PAA 65 kDa. In conclusion, results of the present study indicated that grafting PAA 15 kDa with high percentages of hexyl acrylate can help to prepare vectors with better transfection efficiency and less cytotoxicity. - Highlights: • The modified polyallylamine was synthesized as a gene carrier. • Modification of polyallylamine (15 kDa) with high percentages of hexyl acrylate improved transfection activity remarkably. • Grafting of polymer with acrylate derivatives reduced polymer cytotoxicity especially at percentages of

  20. Reduced-mobility layers with high internal mobility in poly(ethylene oxide)-silica nanocomposites

    Science.gov (United States)

    Golitsyn, Yury; Schneider, Gerald J.; Saalwächter, Kay

    2017-05-01

    A series of poly(ethylene oxide) nanocomposites with spherical silica was studied by proton NMR spectroscopy, identifying and characterizing reduced-mobility components arising from either room-temperature lateral adsorption or possibly end-group mediated high-temperature bonding to the silica surface. The study complements earlier neutron-scattering results for some of the samples. The estimated thickness of a layer characterized by significant internal mobility resembling backbone rotation ranges from 2 nm for longer (20 k) chains adsorbed on 42 nm diameter particles to 0.5 nm and below for shorter (2 k) chains on 13 nm particles. In the latter case, even lower adsorbed amounts are found when hydroxy endgroups are replaced by methyl endgroups. Both heating and water addition do not lead to significant changes of the observables, in contrast to other systems such as acrylate polymers adsorbed to silica, where temperature- and solvent-induced softening associated with a glass transition temperature gradient was evidenced. We highlight the actual agreement and complementarity of NMR and neutron scattering results, with the earlier ambiguities mainly arising from different sensitivities to the component fractions and the details of their mobility.

  1. Dual mobility total hip replacement in a high risk population

    Science.gov (United States)

    Luthra, Jatinder Singh; Al Riyami, Amur; Allami, Mohamad Kasim

    2016-01-01

    Objective: The purpose of the study was to evaluate results of dual mobility total replacement in a high risk population who take hip into hyperflexed position while sitting and praying on the floor. Method: The study included 65 (35 primary total replacement and 30 complex total hip replacement) cases of total hip replacement using avantage privilege dual mobility cup system from biomet. A cemented acetabular component and on femoral side a bimetric stem, either cemented or uncemented used depending on the canal type. Ten cases were examined fluoroscopically in follow up. Result: There was dislocation in one patient undergoing complex hip replacement. Fluoroscopy study showed no impingement between the neck of prosthesis and acetabular shell at extremes of all movements. Conclusion: The prevalence of dislocation is low in our high risk population and we consider it preferred concept for patients undergoing complex total hip replacement. PMID:27924742

  2. Dual mobility total hip replacement in a high risk population

    Directory of Open Access Journals (Sweden)

    Luthra Jatinder Singh

    2016-01-01

    Full Text Available Objective: The purpose of the study was to evaluate results of dual mobility total replacement in a high risk population who take hip into hyperflexed position while sitting and praying on the floor. Method: The study included 65 (35 primary total replacement and 30 complex total hip replacement cases of total hip replacement using avantage privilege dual mobility cup system from biomet. A cemented acetabular component and on femoral side a bimetric stem, either cemented or uncemented used depending on the canal type. Ten cases were examined fluoroscopically in follow up. Result: There was dislocation in one patient undergoing complex hip replacement. Fluoroscopy study showed no impingement between the neck of prosthesis and acetabular shell at extremes of all movements. Conclusion: The prevalence of dislocation is low in our high risk population and we consider it preferred concept for patients undergoing complex total hip replacement.

  3. Optimization and Performance Analysis of High Speed Mobile Access Networks

    CERN Document Server

    Weerawardane, Thushara

    2012-01-01

    The design and development of cost-effective mobile broadband wireless access networks is a key challenge for many mobile network operators. The over-dimensioning or under-dimensioning of an access network results in both additional costs and customer dissatisfaction.   Thushara Weerawardane introduces new transport technologies and features for High Speed Packet Access (HSPA) and Long-Term Evolution (LTE) networks. Using advanced scientific methods, he proposes new adaptive flow control and enhanced congestion control algorithms, then defends them with highly-developed analytical models derived from Markov chains. For faster analysis, compared to long-lasting detailed simulations, these models provide optimum network performance and ensure reliable quality standards for end users during transport network congestion. Further, the author investigates and analyzes LTE transport network performance by introducing novel traffic differentiation models and buffer management techniques during intra-LTE handovers.

  4. High Mobility Group Proteins and Their Post-Translational Modifications

    OpenAIRE

    Zhang, Qingchun; Wang, Yinsheng

    2008-01-01

    The high mobility group (HMG) proteins, including HMGA, HMGB and HMGN, are abundant and ubiquitous nuclear proteins that bind to DNA, nucleosome and other multi-protein complexes in a dynamic and reversible fashion to regulate DNA processing in the context of chromatin. All HMG proteins, like histone proteins, are subjected to extensive post-translational modifications (PTMs), such as lysine acetylation, arginine/lysine methylation and serine/threonine phosphorylation, to modulate their inter...

  5. New resistivity for high-mobility quantum Hall conductors

    Science.gov (United States)

    Mceuen, P. L.; Szafer, A.; Richter, C. A.; Alphenaar, B. W.; Jain, J. K.

    1990-01-01

    Measurements showing dramatic nonlocal behavior in the four-terminal resistances of a high-mobility quantum Hall conductor are presented. These measurements illustrate that the standard definition of the resistivity tensor is inappropriate, but they are in excellent agreement with a new model of the conductor that treats the edge and bulk conducting pathways independently. This model uses a single intensive parameter, analogous to a local resistivity for the bulk channel only, to characterize the system.

  6. Kinase detection with gallium nitride based high electron mobility transistors.

    Science.gov (United States)

    Makowski, Matthew S; Bryan, Isaac; Sitar, Zlatko; Arellano, Consuelo; Xie, Jinqiao; Collazo, Ramon; Ivanisevic, Albena

    2013-07-01

    A label-free kinase detection system was fabricated by the adsorption of gold nanoparticles functionalized with kinase inhibitor onto AlGaN/GaN high electron mobility transistors (HEMTs). The HEMTs were operated near threshold voltage due to the greatest sensitivity in this operational region. The Au NP/HEMT biosensor system electrically detected 1 pM SRC kinase in ionic solutions. These results are pertinent to drug development applications associated with kinase sensing.

  7. Ultimate response time of high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Rudin, Sergey; Rupper, Greg [U.S. Army Research Laboratory, Adelphi, Maryland 20783 (United States); Shur, Michael [Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    2015-05-07

    We present theoretical studies of the response time of the two-dimensional gated electron gas to femtosecond pulses. Our hydrodynamic simulations show that the device response to a short pulse or a step-function signal is either smooth or oscillating time-decay at low and high mobility, μ, values, respectively. At small gate voltage swings, U{sub 0} = U{sub g} − U{sub th}, where U{sub g} is the gate voltage and U{sub th} is the threshold voltage, such that μU{sub 0}/L < v{sub s}, where L is the channel length and v{sub s} is the effective electron saturation velocity, the decay time in the low mobility samples is on the order of L{sup 2}/(μU{sub 0}), in agreement with the analytical drift model. However, the decay is preceded by a delay time on the order of L/s, where s is the plasma wave velocity. This delay is the ballistic transport signature in collision-dominated devices, which becomes important during very short time periods. In the high mobility devices, the period of the decaying oscillations is on the order of the plasma wave velocity transit time. Our analysis shows that short channel field effect transistors operating in the plasmonic regime can meet the requirements for applications as terahertz detectors, mixers, delay lines, and phase shifters in ultra high-speed wireless communication circuits.

  8. Ultimate response time of high electron mobility transistors

    Science.gov (United States)

    Rudin, Sergey; Rupper, Greg; Shur, Michael

    2015-05-01

    We present theoretical studies of the response time of the two-dimensional gated electron gas to femtosecond pulses. Our hydrodynamic simulations show that the device response to a short pulse or a step-function signal is either smooth or oscillating time-decay at low and high mobility, μ, values, respectively. At small gate voltage swings, U0 = Ug - Uth, where Ug is the gate voltage and Uth is the threshold voltage, such that μU0/L < vs, where L is the channel length and vs is the effective electron saturation velocity, the decay time in the low mobility samples is on the order of L2/(μU0), in agreement with the analytical drift model. However, the decay is preceded by a delay time on the order of L/s, where s is the plasma wave velocity. This delay is the ballistic transport signature in collision-dominated devices, which becomes important during very short time periods. In the high mobility devices, the period of the decaying oscillations is on the order of the plasma wave velocity transit time. Our analysis shows that short channel field effect transistors operating in the plasmonic regime can meet the requirements for applications as terahertz detectors, mixers, delay lines, and phase shifters in ultra high-speed wireless communication circuits.

  9. Mobile high-T{sub c} DC SQUID magnetometer

    Energy Technology Data Exchange (ETDEWEB)

    He, D.F.; Yoshizawa, M

    2003-05-01

    By optimizing the designing, we made a small size and low noise high-T{sub c} DC SQUID readout electronics with the modulation frequency of 80 kHz. The white flux noise was about 30 {mu}PHI{sub 0}/{radical}Hz when Sumitomo high-T{sub c} DC SQUID sensor was used. We also proved mobile high-T{sub c} DC SQUID magnetometer was feasible. By using a special compensation method, the SQUID magnetometer could keep locking when it swung about 20 degree sign in the earth field. Using this system and eddy-current nondestructive evaluation method, we successfully detected the defect in ferromagnetic material.

  10. Supramolecular Aggregate as a High-Efficiency Gene Carrier Mediated with Optimized Assembly Structure.

    Science.gov (United States)

    Zhang, Yi; Duan, Junkun; Cai, Lingguang; Ma, Dong; Xue, Wei

    2016-11-02

    For cancer gene therapy, a safe and high-efficient gene carrier is a must. To resolve the contradiction between gene transfection efficiency and cytotoxicity, many polymers with complex topological structures have been synthesized, although their synthesis processes and structure control are difficult as well as the high molecular weight also bring high cytotoxicity. We proposed an alternative strategy that uses supramolecular inclusion to construct the aggregate from the small molecules for gene delivery, and to further explore the relationship between the topological assembly structure and their ability to deliver gene. Herein, PEI-1.8k-conjugating β-CD through 6-hydroxyl (PEI-6-CD) and 2-hydroxyl (PEI-2-CD) have been synthesized respectively and then assembled with diferrocene (Fc)-ended polyethylene glycol (PEG-Fc). The obtained aggregates were then used to deliver MMP-9 shRNA plasmid for MCF-7 cancer therapy. It was found that the higher gene transfection efficiency can be obtained by selecting PEI-2-CD as the host and tuning the host/guest molar ratios. With the rational modulation of supramolecular architectures, the aggregate played the functions similar to macromolecules which exhibit higher transfection efficiency than PEI-25k, but show much lower cytotoxicity because of the nature of small/low molecules. In vitro and in vivo assays confirmed that the aggregate could deliver MMP-9 shRNA plasmid effectively into MCF-7 cells and then downregulate MMP-9 expression, which induced the significant MCF-7 cell apoptosis, as well inhibit MCF-7 tumor growth with low toxicity. The supramolecular aggregates maybe become a promising carrier for cancer gene therapy and also provided an alternative strategy for designing new gene carriers.

  11. Thin Film Transistor Gas Sensors Incorporating High-Mobility Diketopyrrolopyrole-Based Polymeric Semiconductor Doped with Graphene Oxide.

    Science.gov (United States)

    Cheon, Kwang Hee; Cho, Jangwhan; Kim, Yun-Hi; Chung, Dae Sung

    2015-07-01

    In this work, we fabricated a diketopyrrolopyrole-based donor-acceptor copolymer composite film. This is a high-mobility semiconductor component with a functionalized-graphene-oxide (GO) gas-adsorbing dopant, used as an active layer in gas-sensing organic-field-effect transistor (OFET) devices. The GO content of the composite film was carefully controlled so that the crystalline orientation of the semiconducting polymer could be conserved, without compromising its gas-adsorbing ability. The resulting optimized device exhibited high mobility (>1 cm(2) V(-1) s(-1)) and revealed sensitive response during programmed exposure to various polar organic molecules (i.e., ethanol, acetone, and acetonitrile). This can be attributed to the high mobility of polymeric semiconductors, and also to their high surface-to-volume ratio of GO. The operating mechanism of the gas sensing GO-OFET is fully discussed in conjunction with charge-carrier trap theory. It was found that each transistor parameter (e.g., mobility, threshold voltage), responds independently to each gas molecule, which enables high selectivity of GO-OFETs for various gases. Furthermore, we also demonstrated practical GO-OFET devices that operated at low voltage (<1.5 V), and which successfully responded to gas exposure.

  12. High resistivity and ultrafast carrier lifetime in argon implanted GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Walukiewicz, W.; Liliental-Weber, Z.; Jasinski, J. [Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Almonte, M.; Prasad, A.; Haller, E.E.; Weber, E.R. [Lawrence Berkeley National Laboratory and University of California, Berkeley, California 94720 (United States); Grenier, P.; Whitaker, J.F. [Center for Ultrafast Optical Science, University of Michigan, Ann Arbor, Michigan 48109 (United States)

    1996-10-01

    We have investigated the optoelectronic and structural properties of GaAs that has been implanted with Ar ions and subsequently annealed. The material exhibits all the basic optical and electronic characteristics typically observed in nonstoichiometric, As implanted or low-temperature-grown GaAs. Annealing of Ar implanted GaAs at 600{degree}C produces a highly resistive material with a subpicosecond trapping lifetime for photoexcited carriers. Transmission electron microscopy shows that, instead of As precipitates, characteristic for the nonstoichiometeric GaAs, voids ranging in size from 3 to 5 nm are observed in Ar implanted and annealed GaAs. {copyright} {ital 1996 American Institute of Physics.}

  13. Nodal quasi-particles of the high-Tc superconductors as carriers of heat

    Directory of Open Access Journals (Sweden)

    K. Behnia

    2006-09-01

    Full Text Available   In the quest for understanding correlated electrons, high-temperature superconductivity remains a formidable challenge and a source of insight. This paper briefly recalls the central achievement by the study of heat transport at low temperatures. At very low temperatures, nodal quasi-particles of the d-wave superconducting gap become the main carriers of heat. Their thermal conductivity is unaffected by disorder and reflects the fine structure of the superconducting gap. This finding had led to new openings in the exploration of other unconventional superconductors

  14. Demonstration of high-speed multi-user multi-carrier CDMA visible light communication

    Science.gov (United States)

    Yang, Chao; Wang, Yuanquan; Wang, Yiguang; Huang, Xingxing; Chi, Nan

    2015-02-01

    We experimentally demonstrated a high-speed multi-user multi-carrier code-division multiple access (MC-CDMA) visible light communication (VLC) system. By employing a commercially available red light emitting diode (LED) and an avalanche photo diode (APD), we achieved a 16-user VLC system enabled by MC-CDMA, pre- and post-equalization, with an overall bit rate of 750 Mb/s over 1.5 m free-space transmission. The measured bit error ratio (BER) of each user is below the 7% pre-forward-error-correction (pre-FEC) threshold of 3.8×10-3.

  15. Photocatalytic hydrogen generation enhanced by band gap narrowing and improved charge carrier mobility in AgTaO3 by compensated co-doping.

    Science.gov (United States)

    Li, Min; Zhang, Junying; Dang, Wenqiang; Cushing, Scott K; Guo, Dong; Wu, Nianqiang; Yin, Penggang

    2013-10-14

    The correlation of the electronic band structure with the photocatalytic activity of AgTaO3 has been studied by simulation and experiments. Doping wide band gap oxide semiconductors usually introduces discrete mid-gap states, which extends the light absorption but has limited benefit for photocatalytic activity. Density functional theory (DFT) calculations show that compensated co-doping in AgTaO3 can overcome this problem by increasing the light absorption and simultaneously improving the charge carrier mobility. N/H and N/F co-doping can delocalize the discrete mid-gap states created by sole N doping in AgTaO3, which increases the band curvature and the electron-to-hole effective mass ratio. In particular, N/F co-doping creates a continuum of states that extend the valence band of AgTaO3. N/F co-doping thus improves the light absorption without creating the mid-gap states, maintaining the necessary redox potentials for water splitting and preventing from charge carrier trapping. The experimental results have confirmed that the N/F-codoped AgTaO3 exhibits a red-shift of the absorption edge in comparison with the undoped AgTaO3, leading to remarkable enhancement of photocatalytic activity toward hydrogen generation from water.

  16. Design Rules for High Damping in Mobile Hydraulic Systems

    OpenAIRE

    Axin, Mikael; Krus, Petter

    2013-01-01

    This paper analyses the damping in pressure compensated closed centre mobile working hydraulic systems. Both rotational and linear loads are covered and the analysis applies to any type of pump controller. Only the outlet orifice in the directional valve will provide damping to a pressure compensated system. Design rules are proposed for how the system should be dimensioned in order to obtain a high damping. The volumes on each side of the load have a high impact on the damping. In case of a ...

  17. Ultraviolet laser crystallized ZnO:Al films on sapphire with high Hall mobility for simultaneous enhancement of conductivity and transparency

    Energy Technology Data Exchange (ETDEWEB)

    Nian, Qiong; Zhang, Martin Y. [School of Industrial Engineering, Purdue University, 315N. Grant St, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, 1205W State St, West Lafayette, Indiana 47907 (United States); Schwartz, Bradley D. [Goodrich Corporation, UTC Aerospace Systems, 100 Wooster Heights Road, Danbury, Connecticut 06810 (United States); Cheng, Gary J., E-mail: gjcheng@purdue.edu [School of Industrial Engineering, Purdue University, 315N. Grant St, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, 1205W State St, West Lafayette, Indiana 47907 (United States); School of Mechanical Engineering, Purdue University, 585 Purdue Mall, West Lafayette, Indiana 47907 (United States)

    2014-05-19

    One of the most challenging issues in transparent conductive oxides (TCOs) is to improve their conductivity without compromising transparency. High conductivity in TCO films often comes from a high carrier concentration, which is detrimental to transparency due to free carrier absorption. Here we show that UV laser crystallization (UVLC) of aluminum-doped ZnO (AZO) films prepared by pulsed laser deposition on sapphire results in much higher Hall mobility, allowing relaxation of the constraints of the conductivity/transparency trade-off. X-ray diffraction patterns and morphological characterizations show grain growth and crystallinity enhancement during UVLC, resulting in less film internal imperfections. Optoelectronic measurements show that UVLC dramatically improves the electron mobility, while the carrier concentration decreases which in turn simultaneously increases conductivity and transparency. AZO films under optimized UVLC achieve the highest electron mobility of 79 cm{sup 2}/V s at a low carrier concentration of 7.9 × 10{sup +19} cm{sup −3}. This is realized by a laser crystallization induced decrease of both grain boundary density and electron trap density at grain boundaries. The infrared (IR) to mid-IR range transmittance spectrum shows UVLC significantly enhances the AZO film transparency without compromising conductivity.

  18. Optical conductivity and optical effective mass in a high-mobility organic semiconductor: Implications for the nature of charge transport

    KAUST Repository

    Li, Yuan

    2014-12-03

    We present a multiscale modeling of the infrared optical properties of the rubrene crystal. The results are in very good agreement with the experimental data that point to nonmonotonic features in the optical conductivity spectrum and small optical effective masses. We find that, in the static-disorder approximation, the nonlocal electron-phonon interactions stemming from low-frequency lattice vibrations can decrease the optical effective masses and lead to lighter quasiparticles. On the other hand, the charge-transport and infrared optical properties of the rubrene crystal at room temperature are demonstrated to be governed by localized carriers driven by inherent thermal disorders. Our findings underline that the presence of apparently light carriers in high-mobility organic semiconductors does not necessarily imply bandlike transport.

  19. Graded Carrier Concentration Absorber Profile for High Efficiency CIGS Solar Cells

    Directory of Open Access Journals (Sweden)

    Antonino Parisi

    2015-01-01

    Full Text Available We demonstrate an innovative CIGS-based solar cells model with a graded doping concentration absorber profile, capable of achieving high efficiency values. In detail, we start with an in-depth discussion concerning the parametrical study of conventional CIGS solar cells structures. We have used the wxAMPS software in order to numerically simulate cell electrical behaviour. By means of simulations, we have studied the variation of relevant physical and chemical parameters—characteristic of such devices—with changing energy gap and doping density of the absorber layer. Our results show that, in uniform CIGS cell, the efficiency, the open circuit voltage, and short circuit current heavily depend on CIGS band gap. Our numerical analysis highlights that the band gap value of 1.40 eV is optimal, but both the presence of Molybdenum back contact and the high carrier recombination near the junction noticeably reduce the crucial electrical parameters. For the above-mentioned reasons, we have demonstrated that the efficiency obtained by conventional CIGS cells is lower if compared to the values reached by our proposed graded carrier concentration profile structures (up to 21%.

  20. Investigations on high speed directly modulated microdisk lasers accounting for radial carrier hole burning

    Science.gov (United States)

    Huang, Yong-Zhen; Lv, Xiao-Meng; Zou, Ling-Xiu; Long, Heng; Xiao, Jin-Long; Yang, Yue-De; Du, Yun

    2014-04-01

    High-speed modulation characteristics are investigated for microdisk lasers theoretically and experimentally. In rate equation analysis, the microdisk resonator is radially divided into two regions under uniform carrier density approximation in each region. The injection current profile, carrier spatial hole burning, and diffusion are accounted for in the evaluation of small-signal modulation curves and the simulation of large-signal responses. The numerical results indicate that a wide mode field pattern in radial direction has merit for high-speed modulation, which is expected for coupled modes in the microdisk lasers connected with an output waveguide. For a 15-μm-radius microdisk laser connected with a 2-μm-wide output waveguide, the measured small-signal response curves with a low-frequency roll-off are well in agreement with the simulated result at a 2-μm radial width for the mode intensity distribution. The resonant frequencies of 7.2, 5.9, and 3.9 GHz are obtained at the temperatures of 287, 298, and 312 K from the small-signal response curves, and clear eye diagrams at 12.5 Gb/s with an extinction ratio of 6.1 dB are observed for the microdisk laser at the biasing current of 38 mA and 287 K.

  1. Power-efficient high-speed parallel-sampling adcs for broadband multi-carrier systems

    CERN Document Server

    Lin, Yu; Doris, Kostas; van Roermund, Arthur H M

    2015-01-01

    This book addresses the challenges of designing high performance analog-to-digital converters (ADCs) based on the “smart data converters” concept, which implies context awareness, on-chip intelligence and adaptation. Readers will learn to exploit various information either a-priori or a-posteriori (obtained from devices, signals, applications or the ambient situations, etc.) for circuit and architecture optimization during the design phase or adaptation during operation, to enhance data converters performance, flexibility, robustness and power-efficiency. The authors focus on exploiting the a-priori knowledge of the system/application to develop enhancement techniques for ADCs, with particular emphasis on improving the power efficiency of high-speed and high-resolution ADCs for broadband multi-carrier systems.

  2. Promising electron mobility and high thermal conductivity in Sc2CT2 (T = F, OH) MXenes.

    Science.gov (United States)

    Zha, Xian-Hu; Zhou, Jie; Zhou, Yuhong; Huang, Qing; He, Jian; Francisco, Joseph S; Luo, Kan; Du, Shiyu

    2016-03-21

    MXenes, the new 2D transition metal carbides and nitrides, have recently attracted extensive attention due to their diverse applications and excellent performances. However, the thermal and electrical properties of most MXene materials are yet to be studied. In this work, we investigate the electrical and thermal properties of semiconducting Sc2CT2 (T = F, OH) MXenes using first-principles calculations. Both of the Sc2CT2 (T = F, OH) MXenes are determined to show excellent carrier mobilities. The electron mobility in the Sc2CF2 MXene is found to be strongly anisotropic at room temperature, with values of 5.03 × 10(3) and 1.07 × 10(3) cm(2) V(-1) s(-1) in the zigzag and armchair directions, respectively. The predicted electron mobility in the zigzag direction of the Sc2CF2 is nearly four-fold that in the armchair direction of the promising semiconductor phosphorene. In contrast to Sc2CF2, Sc2C(OH)2 presents approximately isotropic electron mobility. The values at room temperature in the zigzag and armchair directions are calculated as 2.06 × 10(3) cm(2) V(-1) s(-1) and 2.19 × 10(3) cm(2) V(-1) s(-1), respectively. In regard to the thermal properties, the thermal conductivities of the Sc2CT2 (T = F, OH) MXenes have been determined. The predicted values are higher than those of most metals and semiconducting low-dimensional materials, such as monolayer MoS2 and phosphorene. In particular, the room-temperature thermal conductivity along the Sc2CF2 armchair direction has been determined to be as high as 472 W m(-1) K(-1) based on a flake length of 5 μm, which is even higher than that of the best traditional conductor silver. The corresponding value in the zigzag direction of Sc2CF2 is calculated to be 178 W m(-1) K(-1). The thermal conductivity in Sc2C(OH)2 is less anisotropic and lower compared to that in Sc2CF2. The room-temperature value in the armchair (zigzag) direction is determined to be 173 W m(-1) K(-1) (107 W m(-1) K(-1)). Based on their excellent

  3. Highly efficient low color temperature organic LED using blend carrier modulation layer

    Science.gov (United States)

    Hsieh, Yao-Ching; Chen, Szu-Hao; Shen, Shih-Ming; Wang, Ching-Chiun; Chen, Chien-Chih; Jou, Jwo-Huei

    2012-10-01

    Color temperature (CT) of light has great effect on human physiology and psychology, and low CT light, minimizing melatonin suppression and decreasing the risk of breast, colorectal, and prostate cancer. We demonstrates the incorporation of a blend carrier modulation interlayer (CML) between emissive layers to improve the device performance of low CT organic light emitting diodes, which exhibits an external quantum efficiency of 22.7% and 36 lm W-1 (54 cd A-1) with 1880 K at 100 cd m-2, or 20.8% and 29 lm W-1 (50 cd A-1) with 1940 K at 1000 cd m-2. The result shows a CT much lower than that of incandescent bulbs, which is 2500 K with 15 lmW-1 efficiency, and even as low as that of candles, which is 2000 K with 0.1 lmW-1. The high efficiency of the proposed device may be attributed to its CML, which helps effectively distribute the entering carriers into the available recombination zones.

  4. Printed indium gallium zinc oxide transistors. Self-assembled nanodielectric effects on low-temperature combustion growth and carrier mobility.

    Science.gov (United States)

    Everaerts, Ken; Zeng, Li; Hennek, Jonathan W; Camacho, Diana I; Jariwala, Deep; Bedzyk, Michael J; Hersam, Mark C; Marks, Tobin J

    2013-11-27

    Solution-processed amorphous oxide semiconductors (AOSs) are emerging as important electronic materials for displays and transparent electronics. We report here on the fabrication, microstructure, and performance characteristics of inkjet-printed, low-temperature combustion-processed, amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) grown on solution-processed hafnia self-assembled nanodielectrics (Hf-SANDs). TFT performance for devices processed below 300 °C includes >4× enhancement in electron mobility (μFE) on Hf-SAND versus SiO2 or ALD-HfO2 gate dielectrics, while other metrics such as subthreshold swing (SS), current on:off ratio (ION:IOFF), threshold voltage (Vth), and gate leakage current (Ig) are unchanged or enhanced. Thus, low voltage IGZO/SAND TFT operation (nanodielectrics.

  5. Mobilization

    Science.gov (United States)

    1987-01-01

    istic and romantic emotionalism that typifies this genre. Longino, James C., et al. “A Study of World War Procurement and Industrial Mobilization...States. Harrisburg, PA: Military Service Publishing Co., 1941. CARL 355.22 J72b. Written in rough prose , this World War II era document explains the

  6. Highly Charged Clusters of Fullerenes: Charge Mobility and Appearance Sizes

    Science.gov (United States)

    Manil, B.; Maunoury, L.; Huber, B. A.; Jensen, J.; Schmidt, H. T.; Zettergren, H.; Cederquist, H.; Tomita, S.; Hvelplund, P.

    2003-11-01

    Clusters of fullerenes (C60,C70)n are produced in a gas aggregation source and are multiply ionized in collisions with highly charged Xe20+,30+ ions. Their stabilities and decay processes are analyzed with high-resolution time-of-flight mass spectrometry. Fullerene clusters in charge states up to q=5 have been observed and appearance sizes are found to be as small as napp=5, 10, 21, and 33 for q=2, 3, 4, and 5, respectively. The analysis of the multicoincident fragmentation spectra indicates a high charge mobility. This is in contrast to charge localization effects which have been reported for Arq+n rare gas clusters. Clusters of fullerenes are found to be conducting when multiply charged.

  7. Improving performance of mobile fronthaul architecture employing high order delta-sigma modulator with PAM-4 format.

    Science.gov (United States)

    Li, Haibo; Hu, Rong; Yang, Qi; Luo, Ming; He, Zhixue; Jiang, Peng; Liu, Yongpiao; Li, Xiang; Yu, Shaohua

    2017-01-09

    An improved high-order delta-sigma modulator with multi-level quantizer is proposed to enable carrier aggregation of 4G-LTE signals in mobile fronthaul. Different from conventional delta-sigma modulation-based digital mobile fronthaul, a 2-bit quantizer is employed to reduce the quantization noise, which enabling the transmission via PAM-4 based IM-DD channel. Moreover, we employ the 4th-order high-pass filter (HPF) to replace the 1st-order HPF in the conventional delta-sigma modulator, resulting in a much better noise shaping performance. In the experiment, a PAM-4 based mobile fronthaul transmission of 32 aggregated 4G-LTE signals with a CPRI equivalent data rate of 39.32-Gb/s is demonstrated in a single-λ 10-Gb/s IM-DD channel. Significant improvement of 68% is achieved in the average EVM performance compared to the previous delta-sigma modulation-based digital mobile fronthaul.

  8. Comparison of mobility extraction methods based on field-effect measurements for graphene

    Directory of Open Access Journals (Sweden)

    Hua Zhong

    2015-05-01

    Full Text Available Carrier mobility extraction methods for graphene based on field-effect measurements are explored and compared according to theoretical analysis and experimental results. A group of graphene devices with different channel lengths were fabricated and measured, and carrier mobility is extracted from those electrical transfer curves using three different methods. Accuracy and applicability of those methods were compared. Transfer length method (TLM can obtain accurate density dependent mobility and contact resistance at relative high carrier density based on data from a group of devices, and then can act as a standard method to verify other methods. As two of the most popular methods, direct transconductance method (DTM and fitting method (FTM can extract mobility easily based on transfer curve of a sole graphene device. DTM offers an underestimated mobility at any carrier density owing to the neglect of contact resistances, and the accuracy can be improved through fabricating field-effect transistors with long channel and good contacts. FTM assumes a constant mobility independent on carrier density, and then can obtain mobility, contact resistance and residual density stimulations through fitting a transfer curve. However, FTM tends to obtain a mobility value near Dirac point and then overestimates carrier mobility of graphene. Comparing with the DTM and FTM, TLM could offer a much more accurate and carrier density dependent mobility, that reflects the complete properties of graphene carrier mobility.

  9. High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se

    Science.gov (United States)

    Wu, Jinxiong; Yuan, Hongtao; Meng, Mengmeng; Chen, Cheng; Sun, Yan; Chen, Zhuoyu; Dang, Wenhui; Tan, Congwei; Liu, Yujing; Yin, Jianbo; Zhou, Yubing; Huang, Shaoyun; Xu, H. Q.; Cui, Yi; Hwang, Harold Y.; Liu, Zhongfan; Chen, Yulin; Yan, Binghai; Peng, Hailin

    2017-07-01

    High-mobility semiconducting ultrathin films form the basis of modern electronics, and may lead to the scalable fabrication of highly performing devices. Because the ultrathin limit cannot be reached for traditional semiconductors, identifying new two-dimensional materials with both high carrier mobility and a large electronic bandgap is a pivotal goal of fundamental research. However, air-stable ultrathin semiconducting materials with superior performances remain elusive at present. Here, we report ultrathin films of non-encapsulated layered Bi2O2Se, grown by chemical vapour deposition, which demonstrate excellent air stability and high-mobility semiconducting behaviour. We observe bandgap values of ˜0.8 eV, which are strongly dependent on the film thickness due to quantum-confinement effects. An ultrahigh Hall mobility value of >20,000 cm2 V-1 s-1 is measured in as-grown Bi2O2Se nanoflakes at low temperatures. This value is comparable to what is observed in graphene grown by chemical vapour deposition and at the LaAlO3-SrTiO3 interface, making the detection of Shubnikov-de Haas quantum oscillations possible. Top-gated field-effect transistors based on Bi2O2Se crystals down to the bilayer limit exhibit high Hall mobility values (up to 450 cm2 V-1 s-1), large current on/off ratios (>106) and near-ideal subthreshold swing values (˜65 mV dec-1) at room temperature. Our results make Bi2O2Se a promising candidate for future high-speed and low-power electronic applications.

  10. Mobility and impact ionization in silicon at high temperature

    Energy Technology Data Exchange (ETDEWEB)

    Corvasce, C.

    2007-07-01

    In the field of the high-temperature modelling and simulation of semiconductor devices, most of the physical models available to date have been validated only to 400 K, in spite of the fact that the local heating during the stress event can lead to local temperatures well in excess of this limit. This work deals with the mobility and the impact ionization in silicon at high temperature. The mobility has been measured by the Hall technique up to 1000 K thanks to the use of dedicated Ti/TiN interconnections in combination with junction-free van der Pauw resistors, which are intrinsically immune of spurious thermal leakage currents. The hole and the electron impact ionization coefficients have been determined as a function of the electric field up to 673 K and 613 K, respectively, by measurements of the multiplication factor in bipolar and static induction transistors. The results collected in this work represent an extensive reference data set, which is suitable for the calibration of compact models for numerical simulation. (orig.)

  11. Manipulation of magnetic carriers for drug delivery using pulsed-current high T {sub c} superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Cha, Yung [Energy Technology Division and Material Science Division, Building 335, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439 (United States)]. E-mail: yscha@anl.gov; Chen, Lihua [Energy Technology Division and Material Science Division, Building 335, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439 (United States); Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI 48824 (United States); Askew, Thomas [Energy Technology Division and Material Science Division, Building 335, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439 (United States); Physics Department, Kalamazoo College, Kalamazoo, MI 49006 (United States); Veal, Boyd [Energy Technology Division and Material Science Division, Building 335, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439 (United States); Hull, John [Energy Technology Division and Material Science Division, Building 335, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439 (United States)

    2007-04-15

    An innovative method of manipulating magnetic carriers is proposed, and its feasibility for drug delivery and therapy is demonstrated experimentally. The proposed method employs pulsed-field solenoid coils with high-critical- temperature (T {sub c}) superconductor inserts. Pulsed current is used to magnetize and de-magnetize the superconductor insert. The proposed method was demonstrated to be able to (1) move magnetic particles, ranging in size from a few millimeters to 10 {mu}m, with strong enough forces over a substantial distance, (2) hold the particles at a designated position as long as needed, and (3) reverse the processes and retrieve the particles. We further demonstrated that magnetic particles can be manipulated in a stationary environment, in water flow, and in simulated blood (water/glycerol mixture) flow.

  12. Manipulation of magnetic carriers for drug delivery using pulsed-current high Tc superconductors

    Science.gov (United States)

    Cha, Yung; Chen, Lihua; Askew, Thomas; Veal, Boyd; Hull, John

    2007-04-01

    An innovative method of manipulating magnetic carriers is proposed, and its feasibility for drug delivery and therapy is demonstrated experimentally. The proposed method employs pulsed-field solenoid coils with high-critical- temperature ( Tc) superconductor inserts. Pulsed current is used to magnetize and de-magnetize the superconductor insert. The proposed method was demonstrated to be able to (1) move magnetic particles, ranging in size from a few millimeters to 10 μm, with strong enough forces over a substantial distance, (2) hold the particles at a designated position as long as needed, and (3) reverse the processes and retrieve the particles. We further demonstrated that magnetic particles can be manipulated in a stationary environment, in water flow, and in simulated blood (water/glycerol mixture) flow.

  13. Single Carrier Architecture for High Data Rate Wireless PAN Communications System

    CERN Document Server

    Rakotondrainibe, Lahatra; Zaharia, Gheorghe; Grunfelder, Guy; Zein, Ghaïs El

    2010-01-01

    A 60 GHz wireless Gigabit Ethernet (G.E.) communication system is developed at IETR. As the 60 GHz radio link operates only in a single-room configuration, an additional Radio over Fibre (RoF) link is used to ensure the communications in all the rooms of a residential environment. The realized system covers 2 GHz bandwidth. Due to the hardware constraints, a symbol rate at 875 Mbps is attained using simple single carrier architecture. In the baseband (BB) processing block, an original byte/frame synchronization process is designed to provide a smaller value of the preamble missing detection and false alarm probabilities. Bit error rate (BER) measurements have been realized in a large gym for line-of-sight (LOS) conditions. A Tx-Rx distance greater than 30 meters was attained with low BER using high gain antennas and forward error correction RS (255, 239) coding.

  14. A high carrier injection terahertz quantum cascade laser based on indirectly pumped scheme

    Energy Technology Data Exchange (ETDEWEB)

    Razavipour, S. G., E-mail: sgrazavi@uwaterloo.ca; Xu, C.; Wasilewski, Z. R.; Ban, D. [Department of Electrical and Computer Engineering, Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Ave. W., Waterloo, Ontario N2L3G1 (Canada); Dupont, E.; Laframboise, S. R. [National Research Council, Blg. M-50, 1200 Montreal Rd., Ottawa, Ontario K1A0R6 (Canada); Chan, C. W. I.; Hu, Q. [Department of Electrical Engineering and Computer Science, Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2014-01-27

    A Terahertz quantum cascade laser with a rather high injection coupling strength based on an indirectly pumped scheme is designed and experimentally implemented. To effectively suppress leakage current, the chosen quantum cascade module of the device is based on a five-well GaAs/Al{sub 0.25}Ga{sub 0.75}As structure. The device lases up to 151 K with a lasing frequency of 2.67 THz. This study shows that the effect of higher energy states in carrier transport and the long-range tunnel coupling between states that belong to non-neighbouring modules have to be considered in quantum design of structures with a narrow injector barrier. Moreover, the effect of interface roughness scattering between the lasing states on threshold current is crucial.

  15. High Mobility Group Box Protein-1 in Wound Repair

    Directory of Open Access Journals (Sweden)

    Mauro Patrone

    2012-09-01

    Full Text Available High-mobility group box 1 protein (HMGB1, a member of highly conserved non-histone DNA binding protein family, has been studied as transcription factor and growth factor. Secreted extracellularly by activated monocytes and macrophages or passively released by necrotic or damaged cells, extracellular HMGB1 is a potent mediator of inflammation. Extracellular HMGB1 has apparently contrasting biological actions: it sustains inflammation (with the possible establishment of autoimmunity or of self-maintaining tissue damage, but it also activates and recruits stem cells, boosting tissue repair. Here, we focus on the role of HMGB1 in physiological and pathological responses, the mechanisms by which it contributes to tissue repair and therapeutic strategies base on targeting HMGB1.

  16. Patterning of high mobility electron gases at complex oxide interfaces

    DEFF Research Database (Denmark)

    Trier, Felix; Prawiroatmodjo, G. E. D. K.; von Soosten, Merlin

    2015-01-01

    Oxide interfaces provide an opportunity for electronics. However, patterning of electron gases at complex oxide interfaces is challenging. In particular, patterning of complex oxides while preserving a high electron mobility remains underexplored and inhibits the study of quantum mechanical effects...... where extended electron mean free paths are paramount. This letter presents an effective patterning strategy of both the amorphous-LaAlO3/SrTiO3 (a-LAO/STO) and modulation-doped amorphous-LaAlO3/La7/8Sr1/8MnO3/SrTiO3 (a-LAO/LSM/STO) oxide interfaces. Our patterning is based on selective wet etching...... of amorphous-LSM (a-LSM) thin films, which acts as a hard mask during subsequent depositions. Strikingly, the patterned modulation-doped interface shows electron mobilities up to ∼8 700 cm2/V s at 2 K, which is among the highest reported values for patterned conducting complex oxide interfaces that usually...

  17. Towards high mobility InSb nanowire devices

    Science.gov (United States)

    Gül, Önder; van Woerkom, David J.; van Weperen, Ilse; Car, Diana; Plissard, Sébastien R.; Bakkers, Erik P. A. M.; Kouwenhoven, Leo P.

    2015-05-01

    We study the low-temperature electron mobility of InSb nanowires. We extract the mobility at 4.2 K by means of field effect transport measurements using a model consisting of a nanowire-transistor with contact resistances. This model enables an accurate extraction of device parameters, thereby allowing for a systematic study of the nanowire mobility. We identify factors affecting the mobility, and after optimization obtain a field effect mobility of ˜ 2.5× {{10}4} cm2 V-1 s-1. We further demonstrate the reproducibility of these mobility values which are among the highest reported for nanowires. Our investigations indicate that the mobility is currently limited by adsorption of molecules to the nanowire surface and/or the substrate.

  18. High prevalence of asymptomatic carriers of Tropheryma whipplei in different populations from the North of Spain.

    Science.gov (United States)

    García-Álvarez, Lara; Pérez-Matute, Patricia; Blanco, José Ramón; Ibarra, Valvanera; Oteo, José Antonio

    2016-01-01

    Tropheryma whipplei is the causative agent of Whipple disease. T. whipplei has also been detected in asymptomatic carriers with a very different prevalence. To date, in Spain, there are no data regarding the prevalence of T. whipplei in a healthy population or in HIV-positive patients, or in chronic fatigue syndrome (CFS). Therefore, the aim of this work was to assess the prevalence of T. whipplei in stools in those populations. Stools from 21 HIV-negative subjects, 65 HIV-infected, and 12 CFS patients were analysed using real time-PCR. HIV-negative and positive subjects were divided into two groups, depending on the presence/absence of metabolic syndrome (MS). Positive samples were sequenced. The prevalence of T. whipplei was 25.51% in 98 stool samples analysed. Prevalence in HIV-positive patients was significantly higher than in HIV-negative (33.8% vs. 9.09%, p=0.008). Prevalence in the control group with no associated diseases was 20%, whereas no positive samples were observed in HIV-negative patients with MS, or in those diagnosed with CFS. The prevalence observed in HIV-positive patients without MS was 30.35%, and with MS it was 55.5%. The number of positive samples varies depending on the primers used, although no statistically significant differences were observed. There is a high prevalence of asymptomatic carriers of T. whipplei among healthy and in HIV-infected people from Spain. The role of T. whipplei in HIV patients with MS is unclear, but the prevalence is higher than in other populations. Copyright © 2015 Elsevier España, S.L.U. and Sociedad Española de Enfermedades Infecciosas y Microbiología Clínica. All rights reserved.

  19. Sows with high milk production had both a high feed intake and high body mobilization.

    Science.gov (United States)

    Strathe, A V; Bruun, T S; Hansen, C F

    2017-02-15

    Selection for increased litter size have generated hyper-prolific sows that nurses large litters, however limited knowledge is available regarding the connection between milk production, feed intake and body mobilization of these modern sows. The aim of the current study was to determine what characterized sows with high milk production and nursing large litters, differences between sows of different parities and effects of lactational performance on next reproductive cycle. In total 565 sows (parity 1 to 4) were studied from 7 days before farrowing until weaning. On day 2 postpartum litters were standardized to 14 piglets. Weight and back fat thickness of sows were measured at day 7 prepartum, day 2 postpartum and at weaning. Litters were weighed at day 2 and at weaning. Pearson correlation coefficients between variables were calculated and regression models were developed. The average daily feed intake (ADFI) of the sows was 6.1±1.1 kg/day, average daily gain (ADG) of the litter was 2.92±0.53 kg/day and sows weaned 13.0±1.1 piglets. First parity sows generally had a lower ADFI and milk production and a decrease in total born piglets in next litter compared with parity 2 to 4 sows, which could be explained by a relatively higher proportion of their body reserves being mobilized compared with multiparous sows. The ADG of the litter was positively related by ADFI of the sows, litter size and BW loss and increasing the ADFI with 1 kg/day throughout lactation likely increased the ADG of the litter with 220 to 440 g/day in parity 1 to 4, respectively. Increasing the ADFI by 1 kg/day reduced the BW loss with 6.6 to 13.9 kg of parity 1 to 4 sows, respectively, during lactation, whereas increasing the average milk yield with 1 kg/day raised the BW loss with 4.3 to 21.0 kg of the four parities during lactation. The number of total born piglets in the next litter was positively related to the number of piglets born in the previous litter. In conclusion, both a high feed

  20. Compact and mobile high resolution PET brain imager

    Science.gov (United States)

    Majewski, Stanislaw; Proffitt, James

    2011-02-08

    A brain imager includes a compact ring-like static PET imager mounted in a helmet-like structure. When attached to a patient's head, the helmet-like brain imager maintains the relative head-to-imager geometry fixed through the whole imaging procedure. The brain imaging helmet contains radiation sensors and minimal front-end electronics. A flexible mechanical suspension/harness system supports the weight of the helmet thereby allowing for patient to have limited movements of the head during imaging scans. The compact ring-like PET imager enables very high resolution imaging of neurological brain functions, cancer, and effects of trauma using a rather simple mobile scanner with limited space needs for use and storage.

  1. Optimized Carrier Tracking Loop Design for Real-Time High-Dynamics GNSS Receivers

    Directory of Open Access Journals (Sweden)

    Pedro A. Roncagliolo

    2012-01-01

    Full Text Available Carrier phase estimation in real-time Global Navigation Satellite System (GNSS receivers is usually performed by tracking loops due to their very low computational complexity. We show that a careful design of these loops allows them to operate properly in high-dynamics environments, that is, accelerations up to 40 g or more. Their phase and frequency discriminators and loop filter are derived considering the digital nature of the loop inputs. Based on these ideas, we propose a new loop structure named Unambiguous Frequency-Aided Phase-Locked Loop (UFA-PLL. In terms of tracking capacity and noise resistance UFA-PLL has the same advantages of frequently used coupled-loop schemes, but it is simpler to design and to implement. Moreover, it can keep phase lock in situations where other loops cannot. The loop design is completed selecting the correlation time and loop bandwidth that minimize the pull-out probability, without relying on typical rules of thumb. Optimal and efficient ways to smooth the phase estimates are also presented. Hence, high-quality phase measurements—usually exploited in offline and quasistatic applications—become practical for real-time and high-dynamics receivers. Experiments with fixed-point implementations of the proposed loops and actual radio signals are also shown.

  2. High mobility, large linear magnetoresistance, and quantum transport phenomena in Bi2Te3 films grown by metallo-organic chemical vapor deposition (MOCVD).

    Science.gov (United States)

    Jin, Hyunwoo; Kim, Kwang-Chon; Seo, Juhee; Kim, Seong Keun; Cheong, Byung-Ki; Kim, Jin-Sang; Lee, Suyoun

    2015-11-07

    We investigated the magnetotransport properties of Bi2Te3 films grown on GaAs (001) substrate by a cost-effective metallo-organic chemical vapor deposition (MOCVD). We observed the remarkably high carrier mobility and the giant linear magnetoresistance (carrier mobility ∼ 22 000 cm(2) V(-1) s(-1), magnetoresistance ∼ 750% at 1.8 K and 9 T for a 100 nm thick film) that depends on the film thickness. In addition, the Shubnikov-de Haas oscillation was observed, from which the effective mass was calculated to be consistent with the known value. From the thickness dependence of the Shubnikov-de Haas oscillation, it was found that a two dimensional electron gas with the conventional electron nature coexists with the topological Dirac fermion states and dominates the carrier transport in the Bi2Te3 film with thickness higher than 300 nm. These results are attributed to the intrinsic nature of Bi2Te3 in the high-mobility transport regime obtained by a deliberate choice of the substrate and the growth conditions.

  3. Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature.

    Science.gov (United States)

    Liu, Xinke; Ang, Kah-Wee; Yu, Wenjie; He, Jiazhu; Feng, Xuewei; Liu, Qiang; Jiang, He; Dan Tang; Wen, Jiao; Lu, Youming; Liu, Wenjun; Cao, Peijiang; Han, Shun; Wu, Jing; Liu, Wenjun; Wang, Xi; Zhu, Deliang; He, Zhubing

    2016-04-22

    Black phosphorus (BP) has emerged as a promising two-dimensional (2D) material for next generation transistor applications due to its superior carrier transport properties. Among other issues, achieving reduced subthreshold swing and enhanced hole mobility simultaneously remains a challenge which requires careful optimization of the BP/gate oxide interface. Here, we report the realization of high performance BP transistors integrated with HfO2 high-k gate dielectric using a low temperature CMOS process. The fabricated devices were shown to demonstrate a near ideal subthreshold swing (SS) of ~69 mV/dec and a room temperature hole mobility of exceeding >400 cm(2)/Vs. These figure-of-merits are benchmarked to be the best-of-its-kind, which outperform previously reported BP transistors realized on traditional SiO2 gate dielectric. X-ray photoelectron spectroscopy (XPS) analysis further reveals the evidence of a more chemically stable BP when formed on HfO2 high-k as opposed to SiO2, which gives rise to a better interface quality that accounts for the SS and hole mobility improvement. These results unveil the potential of black phosphorus as an emerging channel material for future nanoelectronic device applications.

  4. Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature

    Science.gov (United States)

    Liu, Xinke; Ang, Kah-Wee; Yu, Wenjie; He, Jiazhu; Feng, Xuewei; Liu, Qiang; Jiang, He; Dan Tang; Wen, Jiao; Lu, Youming; Liu, Wenjun; Cao, Peijiang; Han, Shun; Wu, Jing; Liu, Wenjun; Wang, Xi; Zhu, Deliang; He, Zhubing

    2016-04-01

    Black phosphorus (BP) has emerged as a promising two-dimensional (2D) material for next generation transistor applications due to its superior carrier transport properties. Among other issues, achieving reduced subthreshold swing and enhanced hole mobility simultaneously remains a challenge which requires careful optimization of the BP/gate oxide interface. Here, we report the realization of high performance BP transistors integrated with HfO2 high-k gate dielectric using a low temperature CMOS process. The fabricated devices were shown to demonstrate a near ideal subthreshold swing (SS) of ~69 mV/dec and a room temperature hole mobility of exceeding >400 cm2/Vs. These figure-of-merits are benchmarked to be the best-of-its-kind, which outperform previously reported BP transistors realized on traditional SiO2 gate dielectric. X-ray photoelectron spectroscopy (XPS) analysis further reveals the evidence of a more chemically stable BP when formed on HfO2 high-k as opposed to SiO2, which gives rise to a better interface quality that accounts for the SS and hole mobility improvement. These results unveil the potential of black phosphorus as an emerging channel material for future nanoelectronic device applications.

  5. The influence of lubricant carrier and lubrication conditions on mechanical-technological properties of high carbon steel wires

    Directory of Open Access Journals (Sweden)

    M. Suliga

    2016-10-01

    Full Text Available In this paper the effect of the type of soap powder and lubricant carriers on lubrication conditions in multipass drawing process of high carbon steel wires has been determined. The wire drawing process was conducted in industrial conditions by means of a modern multi-die Koch drawing machine. For wires drawn on borax and phosphate lubricant carriers the mechanical-technological properties have been carried out, in which yield stress, tensile strength, uniform elongation, number of twists and number of bends were assessed. It has been proved that the application of phosphate lubricant carrier and also the rotary die in the first draft in an essential way improve the lubrication condition in high speed multipass drawing process and makes it possible to refine the mechanical properties of wires.

  6. Next-generation sequencing improves thalassemia carrier screening among premarital adults in a high prevalence population: the Dai nationality, China.

    Science.gov (United States)

    He, Jing; Song, Wenhui; Yang, Jinlong; Lu, Sen; Yuan, Yuan; Guo, Junfu; Zhang, Jie; Ye, Kai; Yang, Fan; Long, Fangfang; Peng, Zhiyu; Yu, Haijing; Cheng, Le; Zhu, Baosheng

    2017-09-01

    Thalassemia is one of the most common monogenic diseases in southwestern China, especially among the Dai ethnic group. Here, we explore the feasibility of a next-generation sequencing (NGS) screening method specifically for the Dai people. Blood samples were obtained from Dai people for premarital screening. Double-blind, parallel hemoglobinopathy screening was conducted using both traditional hematological methods (red cell indexes and hemoglobin electrophoresis, then DNA sequencing) and an NGS approach. Among 951 tested individuals, we found a thalassemia carrier rate of 49.5% (471/951) using the NGS screen, in contrast to 22.0% (209/951) found using traditional methods. Almost 74.8% (217/290) of α-thalassemia carriers and 30.5% (25/82) of composite α- and β-thalassemia carriers were missed by traditional screens. The proportion of such α- and β-thalassemia carriers among the Dai people is 8.6% (82/951). For β-thalassemia carriers, the high ratio (66/99) of CD26 mutations may suggest a correlation between CD26 and the environmental adaption of the Dai people. Methodological comparisons demonstrate the superiority of NGS for both sensitivity and specificity, provide a comprehensive assessment of thalassemia screening strategies, and indicate that NGS is a competitive screening method, especially among populations with a high prevalence of disease.Genet Med advance online publication 26 January 2017.

  7. Crystal growth of Dirac semimetal ZrSiS with high magnetoresistance and mobility

    Science.gov (United States)

    Sankar, Raman; Peramaiyan, G.; Muthuselvam, I. Panneer; Butler, Christopher J.; Dimitri, Klauss; Neupane, Madhab; Rao, G. Narsinga; Lin, M.-T.; Chou, F. C.

    2017-01-01

    High quality single crystal ZrSiS as a theoretically predicted Dirac semimetal has been grown successfully using a vapor phase transport method. The single crystals of tetragonal structure are easy to cleave into perfect square-shaped pieces due to the van der Waals bonding between the sulfur atoms of the quintuple layers. Physical property measurement results including resistivity, Hall coefficient (RH), and specific heat are reported. The transport and thermodynamic properties suggest a Fermi liquid behavior with two Fermi pockets at low temperatures. At T = 3 K and magnetic field of Hǁc up to 9 Tesla, large magneto-resistance up to 8500% and 7200% for Iǁ(100) and Iǁ(110) were found. Shubnikov de Haas (SdH) oscillations were identified from the resistivity data, revealing the existence of two Fermi pockets at the Fermi level via the fast Fourier transform (FFT) analysis. The Hall coefficient (RH) showed hole-dominated carriers with a high mobility of 3.05 × 104 cm2 V−1 s−1 at 3 K. ZrSiS has been confirmed to be a Dirac semimetal by the Dirac cone mapping near the X-point via angle resolved photoemission spectroscopy (ARPES) with a Dirac nodal line near the Fermi level identified using scanning tunneling spectroscopy (STS). PMID:28098209

  8. Industrially feasible, dopant-free, carrier-selective contacts for high-efficiency silicon solar cells

    KAUST Repository

    Yang, Xinbo

    2017-05-31

    Dopant-free, carrier-selective contacts (CSCs) on high efficiency silicon solar cells combine ease of deposition with potential optical benefits. Electron-selective titanium dioxide (TiO) contacts, one of the most promising dopant-free CSC technologies, have been successfully implemented into silicon solar cells with an efficiency over 21%. Here, we report further progress of TiO contacts for silicon solar cells and present an assessment of their industrial feasibility. With improved TiO contact quality and cell processing, a remarkable efficiency of 22.1% has been achieved using an n-type silicon solar cell featuring a full-area TiO contact. Next, we demonstrate the compatibility of TiO contacts with an industrial contact-firing process, its low performance sensitivity to the wafer resistivity, its applicability to ultrathin substrates as well as its long-term stability. Our findings underscore the great appeal of TiO contacts for industrial implementation with their combination of high efficiency with robust fabrication at low cost.

  9. High-temperature adsorption layers based on fluoridated polyimide and diatomite carrier

    Science.gov (United States)

    Yakovleva, E. Yu.; Shundrina, I. K.; Gerasimov, E. Yu.

    2017-09-01

    A way of preparing separation layers by the pyrolysis of fluorinated polyimide obtained from 2,4,6-trimethyl- m-phenylenediamine (2,4,6-TM mPDA) and 2,2-bis(3',4'-dicarboxyphenyl)hexafluoropropane (6FDA) applied onto a diatomite carrier is described. Thermogravimetry, elemental analysis, low-temperature nitrogen adsorption, high-resolution electron microscopy, and gas chromatography are used to study changes in the texture and chromatographic characteristics of these layers. It is found that changes in the structure and the effectivity of separation characteristic of the layers depend on the temperature of pyrolysis, which ranges from 250 to 1100°C. It is established that a layer of separation is formed at 250-350°C, and the order of elution of hydrocarbons is similar to their chromatographic behavior on such stationary phases as OV-101. Layers of amorphous carbon formed on the surfaces of individual particles on a diatomite surface at 500-700°C. These layers ensure highly stable and selective separation of permanent gases and hydrocarbons when they are present together.

  10. Carrier Envelope Phase Controlled High-Order Harmonic Generation in Ultrashort Laser Pulse

    Institute of Scientific and Technical Information of China (English)

    WANG Bing-Bing; CHEN Jing; LIU Jie; LI Xiao-Feng; FU Pan-Ming

    2005-01-01

    @@ We investigate the carrier envelope phase (CEP) effects on high-order harmonic generation (HHG) in ultrashort pulses with the pulse duration 2.5fs when the laser intensity is high enough so that the initial state is ionized effectively during the laser pulse but remains about 20% population at the end of the laser pulse. We find that the ionization process of the initial state is very sensitive to the CEP during the laser pulse. The ionization process of the initial state determines the continuum state population and hence influences dramatically the weights of the classical trajectories that contribute to HHG. In such a case we can not predict the cutoff and the structure of the harmonic spectrum only by the number and the kinetic energy of the classical trajectories. The harmonic spectrum exhibits abundant characters for different CEP cases. As a result, we can control the cutoff frequency and the plateau structure of the harmonic spectrum with CEP by controlling the time behaviour of the ionization of the initial state.

  11. Investigation of the basic physics of high efficiency semiconductor hot carrier solar cell

    Science.gov (United States)

    Alfano, R. R.; Wang, W. B.; Mohaidat, J. M.; Cavicchia, M. A.; Raisky, O. Y.

    1995-01-01

    The main purpose of this research program is to investigate potential semiconductor materials and their multi-band-gap MQW (multiple quantum wells) structures for high efficiency solar cells for aerospace and commercial applications. The absorption and PL (photoluminescence) spectra, the carrier dynamics, and band structures have been investigated for semiconductors of InP, GaP, GaInP, and InGaAsP/InP MQW structures, and for semiconductors of GaAs and AlGaAs by previous measurements. The barrier potential design criteria for achieving maximum energy conversion efficiency, and the resonant tunneling time as a function of barrier width in high efficiency MQW solar cell structures have also been investigated in the first two years. Based on previous carrier dynamics measurements and the time-dependent short circuit current density calculations, an InAs/InGaAs - InGaAs/GaAs - GaAs/AlGaAs MQW solar cell structure with 15 bandgaps has been designed. The absorption and PL spectra in InGaAsP/InP bulk and MQW structures were measured at room temperature and 77 K with different pump wavelength and intensity, to search for resonant states that may affect the solar cell activities. Time-resolved IR absorption for InGaAsP/InP bulk and MQW structures has been measured by femtosecond visible-pump and IR-probe absorption spectroscopy. This, with the absorption and PL measurements, will be helpful to understand the basic physics and device performance in multi-bandgap InAs/InGaAs - InGaAs/InP - InP/InGaP MQW solar cells. In particular, the lifetime of the photoexcited hot electrons is an important parameter for the device operation of InGaAsP/InP MQW solar cells working in the resonant tunneling conditions. Lastly, time evolution of the hot electron relaxation in GaAs has been measured in the temperature range of 4 K through 288 K using femtosecond pump-IR-probe absorption technique. The temperature dependence of the hot electron relaxation time in the X valley has been measured.

  12. High mobility and high stability glassy metal-oxynitride materials and devices

    Science.gov (United States)

    Lee, Eunha; Kim, Taeho; Benayad, Anass; Hur, Jihyun; Park, Gyeong-Su; Jeon, Sanghun

    2016-04-01

    In thin film technology, future semiconductor and display products with high performance, high density, large area, and ultra high definition with three-dimensional functionalities require high performance thin film transistors (TFTs) with high stability. Zinc oxynitride, a composite of zinc oxide and zinc nitride, has been conceded as a strong substitute to conventional semiconductor film such as silicon and indium gallium zinc oxide due to high mobility value. However, zinc oxynitride has been suffered from poor reproducibility due to relatively low binding energy of nitrogen with zinc, resulting in the instability of composition and its device performance. Here we performed post argon plasma process on zinc oxynitride film, forming nano-crystalline structure in stable amorphous matrix which hampers the reaction of oxygen with zinc. Therefore, material properties and device performance of zinc oxynitride are greatly enhanced, exhibiting robust compositional stability even exposure to air, uniform phase, high electron mobility, negligible fast transient charging and low noise characteristics. Furthermore, We expect high mobility and high stability zinc oxynitride customized by plasma process to be applicable to a broad range of semiconductor and display devices.

  13. High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric

    Science.gov (United States)

    Fujii, Mami N.; Ishikawa, Yasuaki; Miwa, Kazumoto; Okada, Hiromi; Uraoka, Yukiharu; Ono, Shimpei

    2015-12-01

    The use of indium-gallium-zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the use of IGZO thin-film transistors (TFTs) with an ionic-liquid gate dielectric in order to achieve high-density carrier-accumulated IGZO TFTs with high reliability, and we discuss a distinctive mechanism for the degradation of this organic-inorganic hybrid device under long-term electrical stress. Our results demonstrated that an ionic liquid or gel gate dielectric provides highly reliable and low-voltage operation with IGZO TFTs. Furthermore, high-density carrier accumulation helps improve the TFT characteristics and reliability, and it is highly relevant to the electronic phase control of oxide materials and the degradation mechanism for organic-inorganic hybrid devices.

  14. Hazard Avoidance for High-Speed Mobile Robots in Rough Terrain

    Science.gov (United States)

    2006-05-01

    Accepted to the Journal of Field Robotics 1 Hazard Avoidance for High-Speed Mobile Robots in Rough Terrain Matthew Spenko, Yoji Kuroda, Steven...COVERED 00-00-2006 to 00-00-2006 4. TITLE AND SUBTITLE Hazard Avoidance for High-Speed Mobile Robots in Rough Terrain 5a. CONTRACT NUMBER 5b...Fundamentals of vehicle dynamics. Warrendale, PA: Society of Automotive Engineers. Golda, D. (2003). Modeling and analysis of high-speed mobile robots operating

  15. Investigation of carriers of lustrous carbon at high temperatures by infrared spectroscopy (FTIR

    Directory of Open Access Journals (Sweden)

    S. Eichholz

    2010-10-01

    Full Text Available Lustrous carbon is very important in processes of iron casting in green sand. Lustrous carbon (pirografit is a microcrystalline carbon form, which evolves from a gaseous phase. In the case of applying additions, generating lustrous carbon, for sands with bentonite, there is always a danger of emitting – due to a high temperature of liquid cast iron and a humidity - compounds hazardous for a human health. There can be: CO, SO2, benzene, toluene, ethylbenzene, xylene (the so-called: BTEX as well as polycyclic aromatic hydrocarbons(PAHs. In order to asses the selected mixtures: bentonite – carrier of lustrous carbon, in which a coal dust fraction was limited, thethermogravimetric analysis and the analysis of evolving gases were performed. Examinations were carried out in the ApplictaionsLaboratory NITZSCH-Gerätebau GmbH ,Selb/Bavaria, Germany. The NETZSCH TG 209 F1 Iris® thermal analyzer coupled to the BRUKER Optics FTIR TENSOR(TM was used to measure.

  16. Carrier-wave steepened pulses and gradient-gated high-order harmonic generation

    CERN Document Server

    Radnor, S B P; Kinsler, P; New, G H C

    2008-01-01

    We show how to optimize the process of high-harmonic generation (HHG) by gating the interaction using the field gradient of the driving pulse. Since maximized field gradients are efficiently generated by self-steepening processes, we first present a generalized theory of optical carrier-wave self-steepened (CSS) pulses. This goes beyond existing treatments, which only consider third-order nonlinearity, and has the advantage of describing pulses whose wave forms have a range of symmetry properties. Although a fertile field for theoretical work, CSS pulses are difficult to realize experimentally because of the deleterious effect of dispersion. We therefore consider synthesizing CSS-like profiles using a suitably phased sub-set of the harmonics present in a true CSS wave form. Using standard theoretical models of HHG, we show that the presence of gradient-maximized regions on the wave forms can raise the spectral cut-off and so yield shorter attosecond pulses. We study how the quality of the attosecond bursts cr...

  17. Highly Selective Perchlorate Membrane Electrode Based on Cobalt(Ⅲ) Schiff Base as a Neutral Carrier

    Institute of Scientific and Technical Information of China (English)

    SHOKROLLAHI Ardeshir; GHAEDI Mehrorang; RAJABI, Harold Reza; KIANFAR, Ali Hossein

    2009-01-01

    A highly selective poly(vinyl chloride) (PVC) membrane electrode based on Co(Ⅲ)-Schiff base [Co(5-NO2-Salen)(PBu3)]ClO4·H2O (where 5-NO2-SalenH=bis(5-nitrosalycilaldehyde)ethylenediamine) as a new carrier for construction of perchlorate-selective electrode by incorporating the membrane ingredients on the surface of a graphite electrodes has been reported. The proposed electrode possesses a very wide Nernestian potential linear range to perchlorate from 1.0×10-6 to 5.0×10-1 mol·L-1 with a slope of (59.4±0.9) mV per decade of perchlo-rate concentration with a low detection limit of 5.0×10-7 mol·L-1 and good perchlorate selectivity over the wide variety of other anions. The developed electrode has an especially fast response (<5 s) and a wide pH independent range (3.0-12.0) in comparison with recent reported electrodes and can be used for at least 2 months without any considerable divergence in their potential response. This electrode was used for the determination of perchlorate in river water, drinking water, sludgy water and human urine with satisfactory results without complicated and time consuming pretreatment.

  18. Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations

    Science.gov (United States)

    Lee, H.-P.; Perozek, J.; Rosario, L. D.; Bayram, C.

    2016-11-01

    AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer layer configurations: (a) Thick-GaN/3 × {AlxGa1‑xN}/AlN, (b) Thin-GaN/3 × {AlxGa1‑xN}/AlN, and (c) Thin-GaN/AlN, so as to have crack-free and low-bow (electrical properties of these AlGaN/GaN HEMT structures. The effects of buffer layer stacks (i.e. thickness and content) on defectivity, stress, and two-dimensional electron gas (2DEG) mobility and 2DEG concentration are reported. It is shown that 2DEG characteristics are heavily affected by the employed buffer layers between AlGaN/GaN HEMT structures and Si(111) substrates. Particularly, we report that in-plane stress in the GaN layer affects the 2DEG mobility and 2DEG carrier concentration significantly. Buffer layer engineering is shown to be essential for achieving high 2DEG mobility (>1800 cm2/V•s) and 2DEG carrier concentration (>1.0 × 1013 cm‑2) on Si(111) substrates.

  19. Novel Structural Components Contribute to the High Thermal Stability of Acyl Carrier Protein from Enterococcus faecalis.

    Science.gov (United States)

    Park, Young-Guen; Jung, Min-Cheol; Song, Heesang; Jeong, Ki-Woong; Bang, Eunjung; Hwang, Geum-Sook; Kim, Yangmee

    2016-01-22

    Enterococcus faecalis is a Gram-positive, commensal bacterium that lives in the gastrointestinal tracts of humans and other mammals. It causes severe infections because of high antibiotic resistance. E. faecalis can endure extremes of temperature and pH. Acyl carrier protein (ACP) is a key element in the biosynthesis of fatty acids responsible for acyl group shuttling and delivery. In this study, to understand the origin of high thermal stabilities of E. faecalis ACP (Ef-ACP), its solution structure was investigated for the first time. CD experiments showed that the melting temperature of Ef-ACP is 78.8 °C, which is much higher than that of Escherichia coli ACP (67.2 °C). The overall structure of Ef-ACP shows the common ACP folding pattern consisting of four α-helices (helix I (residues 3-17), helix II (residues 39-53), helix III (residues 60-64), and helix IV (residues 68-78)) connected by three loops. Unique Ef-ACP structural features include a hydrophobic interaction between Phe(45) in helix II and Phe(18) in the α1α2 loop and a hydrogen bonding between Ser(15) in helix I and Ile(20) in the α1α2 loop, resulting in its high thermal stability. Phe(45)-mediated hydrophobic packing may block acyl chain binding subpocket II entry. Furthermore, Ser(58) in the α2α3 loop in Ef-ACP, which usually constitutes a proline in other ACPs, exhibited slow conformational exchanges, resulting in the movement of the helix III outside the structure to accommodate a longer acyl chain in the acyl binding cavity. These results might provide insights into the development of antibiotics against pathogenic drug-resistant E. faecalis strains.

  20. High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

    Science.gov (United States)

    Bandurin, Denis A.; Tyurnina, Anastasia V.; Yu, Geliang L.; Mishchenko, Artem; Zólyomi, Viktor; Morozov, Sergey V.; Kumar, Roshan Krishna; Gorbachev, Roman V.; Kudrynskyi, Zakhar R.; Pezzini, Sergio; Kovalyuk, Zakhar D.; Zeitler, Uli; Novoselov, Konstantin S.; Patanè, Amalia; Eaves, Laurence; Grigorieva, Irina V.; Fal'Ko, Vladimir I.; Geim, Andre K.; Cao, Yang

    2016-11-01

    A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum confinement and are most profound if the underlying lattice symmetry changes. Here we report a high-quality 2D electron gas in few-layer InSe encapsulated in hexagonal boron nitride under an inert atmosphere. Carrier mobilities are found to exceed 103 cm2 V‑1 s‑1 and 104 cm2 V‑1 s‑1 at room and liquid-helium temperatures, respectively, allowing the observation of the fully developed quantum Hall effect. The conduction electrons occupy a single 2D subband and have a small effective mass. Photoluminescence spectroscopy reveals that the bandgap increases by more than 0.5 eV with decreasing the thickness from bulk to bilayer InSe. The band-edge optical response vanishes in monolayer InSe, which is attributed to the monolayer's mirror-plane symmetry. Encapsulated 2D InSe expands the family of graphene-like semiconductors and, in terms of quality, is competitive with atomically thin dichalcogenides and black phosphorus.

  1. High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe.

    Science.gov (United States)

    Bandurin, Denis A; Tyurnina, Anastasia V; Yu, Geliang L; Mishchenko, Artem; Zólyomi, Viktor; Morozov, Sergey V; Kumar, Roshan Krishna; Gorbachev, Roman V; Kudrynskyi, Zakhar R; Pezzini, Sergio; Kovalyuk, Zakhar D; Zeitler, Uli; Novoselov, Konstantin S; Patanè, Amalia; Eaves, Laurence; Grigorieva, Irina V; Fal'ko, Vladimir I; Geim, Andre K; Cao, Yang

    2016-11-21

    A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum confinement and are most profound if the underlying lattice symmetry changes. Here we report a high-quality 2D electron gas in few-layer InSe encapsulated in hexagonal boron nitride under an inert atmosphere. Carrier mobilities are found to exceed 10(3) cm(2) V(-1) s(-1) and 10(4) cm(2) V(-1) s(-1) at room and liquid-helium temperatures, respectively, allowing the observation of the fully developed quantum Hall effect. The conduction electrons occupy a single 2D subband and have a small effective mass. Photoluminescence spectroscopy reveals that the bandgap increases by more than 0.5 eV with decreasing the thickness from bulk to bilayer InSe. The band-edge optical response vanishes in monolayer InSe, which is attributed to the monolayer's mirror-plane symmetry. Encapsulated 2D InSe expands the family of graphene-like semiconductors and, in terms of quality, is competitive with atomically thin dichalcogenides and black phosphorus.

  2. BEYOND THE WORK-LIFE BALANCE: FAMILY AND INTERNATIONAL MOBILITY OF THE HIGHLY SKILLED

    Directory of Open Access Journals (Sweden)

    Núria Vergés Bosch

    2013-10-01

    Full Text Available International mobility of the highly skilled has become one of the cornerstones of development in the current knowledge society. Correspondingly, highly skilled personnel are impelled to move abroad in order to improve their competences and build influential professional networks. Mobility implies some advantages involving personal, social and family opportunities when movers experience handicaps in their country of origin. For movers, mobility becomes a new challenge beyond the work-family balance, particularly for women who usually take on the lion’s share of childcare and domestic tasks within the family. The literature exploring the gender dimension in relation to international mobility points to complex outcomes. Firstly, women are taking on a more active role in international mobility processes, even when they have family. Secondly, family and international mobility are interrelated both for men and for women, although family could become a hindrance, particularly for women. Thirdly, international mobility and women’s career development may interfere with family formation or modify traditional family values. Finally, families moving abroad constitute a challenge for public policy, since they present a new area of problems. We aim to analyse the relationship between international mobility and family based on in-depth interviews from a purposive sample of highly skilled personnel in science and technology. The results of our research suggest that international mobility of the highly skilled has effects on the family and vice versa; however, while international mobility and family are compatible, measures and policies to reconcile them are still insufficient.

  3. Calcium isotopic composition of high-latitude proxy carrier Neogloboquadrina pachyderma (sin.

    Directory of Open Access Journals (Sweden)

    A. Eisenhauer

    2009-01-01

    Full Text Available The accurate reconstruction of sea surface temperature (SST history in climate-sensitive regions (e.g. tropical and polar oceans became a challenging task in palaeoceanographic research. Biogenic shell carbonate SST proxies successfully developed for tropical regions often fail in cool water environments. Their major regional shortcomings and the cryptic diversity now found within the major high latitude proxy carrier Neogloboquadrina pachyderma (sin. highlight an urgent need to explore complementary SST proxies for these cool-water regions. Here we incorporate the genetic component into a calibration study of a new SST proxy for the high latitudes. We found that the calcium isotopic composition (δ44/40Ca of calcite from genotyped net catches and core-top samples of the planktonic foraminifera Neogloboquadrina pachyderma (sin. is related to temperature and unaffected by genetic variations. The temperature sensitivity has been found to be 0.17 (±0.02‰ per 1°C, highlighting its potential for downcore applications in open marine cool-water environments. Our results further indicate that in extreme polar environments, below a critical threshold temperature of 2.0 (±0.5°C associated with salinities below 33.0 (±0.5‰, a prominent shift in biomineralization affects the δ44/40Ca of genotyped and core-top N. pachyderma (sin., becoming insensitive to temperature. These findings highlight the need of more systematic calibration studies on single planktonic foraminiferal species in order to unravel species-specific factors influencing the temperature sensitivity of Ca isotope fractionation and to validate the proxies' applicability.

  4. Interference Control for Cognitive Network with High Mobility

    Directory of Open Access Journals (Sweden)

    Yuanxuan Li

    2013-01-01

    Full Text Available Interference control (IC between the secondary system and the primary system is an important issue for underlay cognitive radio network (CRN. The secondary system should limit the interference power to primary system by adjusting its transmission power. Many relevant works have been done based on the assumption of the quasistatic channel which is not suitable for the fast time-varying fading channel; the performance of IC in underlay CRN will become worse when the channel varies fast. This paper studies the IC issue in high mobility environment. By considering the channel state information (CSI outdatedness, a short frame structure scheme and a mean interference power constraint scheme are proposed to reduce the influence of CSI outdatedness on IC performance. Furthermore, by considering the channel estimation error, a spherical error region model based robust IC scheme is designed as well. The proposed IC schemes of the secondary system are converted to the power allocation problems, and then they are formulated to optimization problem whose objects are to maximize the capacity of the secondary system with the interference constraints. The above optimization problems are solved by the water-filling style method. The simulation results show that the proposed IC schemes can effectively control the interference power to the primary system.

  5. High-mobility group box-1 in sterile inflammation.

    Science.gov (United States)

    Tsung, A; Tohme, S; Billiar, T R

    2014-11-01

    High-mobility group box 1 (HMGB1) was originally defined as a ubiquitous nuclear protein, but it was later determined that the protein has different roles both inside and outside of cells. Nuclear HMGB1 regulates chromatin structure and gene transcription, whereas cytosolic HMGB1 is involved in inflammasome activation and autophagy. Extracellular HMGB1 has drawn attention because it can bind to related cell signalling transduction receptors, such as the receptor for advanced glycation end products, Toll-like receptor (TLR)2, TLR4 and TLR9. It also participates in the development and progression of a variety of diseases. HMGB1 is actively secreted by stimulation of the innate immune system, and it is passively released by ischaemia or cell injury. This review focuses on the important role of HMGB1 in the pathogenesis of acute and chronic sterile inflammatory conditions. Strategies that target HMGB1 have been shown to significantly decrease inflammation in several disease models of sterile inflammation, and this may represent a promising clinical approach for treatment of certain conditions associated with sterile inflammation. © 2014 The Association for the Publication of the Journal of Internal Medicine.

  6. Job Mobility and Wage Mobility of High- and Low-Paid Workers

    NARCIS (Netherlands)

    Fouarge, D.; Muffels, R.; Vermunt, J.K.; Pavlopoulos, D.

    2007-01-01

    Studies have shown that voluntary job-to-job changes have a positive effect on wage growth. This paper argues that the impact of a job change on wage mobility depends on the position in the wage distribution. Using panel data from the UK and Germany, we show that a change of employer results into a

  7. Recycling Gene Carrier with High Efficiency and Low Toxicity Mediated by L-Cystine-Bridged Bis(β-cyclodextrin)s

    Science.gov (United States)

    Zhang, Yu-Hui; Chen, Yong; Zhang, Ying-Ming; Yang, Yang; Chen, Jia-Tong; Liu, Yu

    2014-12-01

    Constructing safe and effective gene delivery carriers is becoming highly desirable for gene therapy. Herein, a series of supramolecular crosslinking system were prepared through host-guest binding of adamantyl-modified low molecular weight of polyethyleneimine with L-cystine-bridged bis(β-cyclodextrin)s and characterized by 1H NMR titration, electron microscopy, zeta potential, dynamic light-scattering, gel electrophoresis, flow cytometry and confocal fluorescence microscopy. The results showed that these nanometersized supramolecular crosslinking systems exhibited higher DNA transfection efficiencies and lower cytotoxicity than the commercial DNA carrier gold standard (25 kDa bPEI) for both normal cells and cancer cells, giving a very high DNA transfection efficiency up to 54% for 293T cells. Significantly, this type of supramolecular crosslinking system possesses a number of enzyme-responsive disulfide bonds, which can be cleaved by reductive enzyme to promote the DNA release but recovered by oxidative enzyme to make the carrier renewable. These results demonstrate that these supramolecular crosslinking systems can be used as promising gene carriers.

  8. High fructose intake fails to induce symptomatic adaptation but may induce intestinal carriers

    Directory of Open Access Journals (Sweden)

    Debra Heilpern

    2010-01-01

    Full Text Available Fructose has several interactions in man, including intolerance and promotion of some diseases. However, fructose in fruits and in prebiotics may be associated with benefits. Adaptation to regular fructose ingestion as defined for lactose could support a beneficial rather than a deleterious effect. This study was undertaken to evaluate symptomatic response and potential underlying mechanisms of fecal bacterial change and breath hydrogen response to short term regular fructose supplementation. Forty-five participants were recruited for a 3 day recall diet questionnaire and a 50 g fructose challenge. Breath hydrogen was measured for 4.5 hrs and symptoms were recorded. Thirty-eight subjects provided stool samples for analysis by selective culture of 4 groups of bacteria, including bifidobacteria and lactobacilli. Intolerant subjects returned a second time 15 days later. Ten of these served as controls and 16 received 30 g fructose twice a day. Ten of the latter returned 27 days later, after stopping fructose for a third challenge test. Student’s paired, unpaired t-tests and Pearson correlations were used. Significance was accepted at P<0.05. After fructose rechallenge there were no significant reductions in symptoms scores in volunteers in either the fructose supplemented or non supplemented groups. However, total breath hydrogen was reduced between test 1 and test 2 (P=0.03 or test 3 (P=0.04 in the group given fructose then discontinued, compared with controls. There were no statistically significant changes in bacterial numbers between test 2 and 1. This study shows that regular consumption of high dose fructose does not follow the lactose model of adaptation. Observed changes in hydrogen breath tests raise the possibility that intestinal carriers of fructose may be induced potentially aggravating medical problems attributed to fructose.

  9. Introduction of high nitrogen doped graphene as a new cationic carrier in electromembrane extraction.

    Science.gov (United States)

    Atarodi, Atefe; Chamsaz, Mahmoud; Moghaddam, Ali Zeraatkar; Tabani, Hadi

    2016-05-01

    This paper proposes for the first time, the use of high nitrogen doped graphene (HND-G) as a new cationic carrier for the enhancement of electromembrane extraction (EME) performance. Sensitivity of EME was improved by the modification of supported liquid membrane composition through the addition of HND-G into 1-octanol for the extraction of naproxen and sodium diclofenac as model acidic drugs. The comparison between HND-G-modified EME and conventional EME showed that HND-G could increase the overall partition coefficient of acidic drugs in the membrane due to the fact that HND-G acts as an ion pair reagent and there is an electrostatic interaction between positively charged HND-G and acidic drugs with negative charge. During the extraction, model acidic drugs migrated from a 10 mL aqueous sample solution (pH 9.6) through a thin layer of 1-octanol containing 0.6% w/v of HND-G that was impregnated in the pores of a hollow fiber, into a 30 μL basic aqueous acceptor solution (pH 12.3) present in the lumen of the hollow fiber. Equilibrium extraction conditions were obtained after 16 min of operation with the whole assembly agitated at 1000 rpm. Under the optimized conditions, the enrichment factors were between 238 and 322 and also the LODs ranged from 0.1 to 0.7 ng/mL in different samples. Finally, the applicability of this method was evaluated by the extraction and determination of drugs of interest in real urine samples. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs

    KAUST Repository

    Isakov, Ivan

    2016-12-29

    We report the development of hybrid complementary inverters based on p-channel organic and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at <200 °C. For the organic TFTs, a ternary blend consisting of the small-molecule 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene, the polymer indacenodithiophene-benzothiadiazole (CIDT-BT) and the p-type dopant CF was employed, whereas the isotype InO/ZnO heterojunction was used for the n-channel TFTs. When integrated on the same substrate, p- and n-channel devices exhibited balanced carrier mobilities up to 10 cm/Vs. Hybrid complementary inverters based on these devices show high signal gain (>30 V/V) and wide noise margins (70%). The moderate processing temperatures employed and the achieved level of device performance highlight the tremendous potential of the technology for application in the emerging sector of large-area microelectronics.

  11. Imaging Gallium Nitride High Electron Mobility Transistors to Identify Point Defects

    Science.gov (United States)

    2014-03-01

    REPORT TYPE AND DATES COVERED Master’s Thesis 4. TITLE AND SUBTITLE IMAGING GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTORS TO IDENTIFY...Identification of these trends will assist in the improvement of gallium nitride HEMT fabrication processes leading to the development of more...reliable devices. 14. SUBJECT TERMS Electron microscopy, Gallium Nitride (GaN), high electron mobility transistor (HEMT

  12. A three-dimensional nitrogen-doped graphene structure: a highly efficient carrier of enzymes for biosensors.

    Science.gov (United States)

    Guo, Jingxing; Zhang, Tao; Hu, Chengguo; Fu, Lei

    2015-01-28

    In recent years, graphene-based enzyme biosensors have received considerable attention due to their excellent performance. Enormous efforts have been made to utilize graphene oxide and its derivatives as carriers of enzymes for biosensing. However, the performance of these sensors is limited by the drawbacks of graphene oxide such as slow electron transfer rate, low catalytic area and poor conductivity. Here, we report a new graphene-based enzyme carrier, i.e. a highly conductive 3D nitrogen-doped graphene structure (3D-NG) grown by chemical vapour deposition, for highly effective enzyme-based biosensors. Owing to the high conductivity, large porosity and tunable nitrogen-doping ratio, this kind of graphene framework shows outstanding electrical properties and a large surface area for enzyme loading and biocatalytic reactions. Using glucose oxidase (GOx) as a model enzyme and chitosan (CS) as an efficient molecular binder of the enzyme, our 3D-NG based biosensors show extremely high sensitivity for the sensing of glucose (226.24 μA mM(-1) m(-2)), which is almost an order of magnitude higher than those reported in most of the previous studies. The stable adsorption and outstanding direct electrochemical behaviour of the enzyme on the nanocomposite indicate the promising application of this 3D enzyme carrier in high-performance electrochemical biosensors or biofuel cells.

  13. Polaron hopping mediated by nuclear tunnelling in semiconducting polymers at high carrier density

    NARCIS (Netherlands)

    Asadi, Kamal; Kronemeijer, Auke J.; Cramer, Tobias; Koster, L. Jan Anton; Blom, Paul W. M.; de Leeuw, Dago M.

    2013-01-01

    The transition rate for a single hop of a charge carrier in a semiconducting polymer is assumed to be thermally activated. As the temperature approaches absolute zero, the predicted conductivity becomes infinitesimal in contrast to the measured finite conductivity. Here we present a uniform descript

  14. High available and fault tolerant mobile communications infrastructure

    DEFF Research Database (Denmark)

    Beiroumi, Mohammad Zib

    2006-01-01

    as it is the case for many recovery techniques. In addition, the method does not require any modification to mobile clients. The Communicating Extended Finite State Machine (CEFSM) is used to model the behavior of the infrastructure applications. The model based recovery scheme is integrated in the application...... using rollback or replication techniques inapplicable. This dissertation presents a novel failure recovery approach based on a behavioral model of the communication protocols. The new recovery method is able to deal with software and hardware faults and is particularly suitable for mobile communications...... infrastructure. The method enables the faulty applications in the infrastructure to quickly and effectively resume their services to their mobile clients with no or minimal loss of work after failure. In our approach, we do not assume a specific fault behavior for example failstop or transient behavior...

  15. High-field asymmetric waveform ion mobility spectrometry with solvent vapor addition: a potential greener bioanalytical technique.

    Science.gov (United States)

    Tsai, Chia-Wei; Yost, Richard A; Garrett, Timothy J

    2012-06-01

    Green chemistry is a way to avoid threats to human health and the environment in chemical processes, including analytical methodology. According to the 12 principles provided by ACS Green Chemistry Institute, first described by Anastas and Warner, prevention of waste generation should be first considered as an alternative to ways of treating waste. Therefore, analytical techniques that may reduce solvent waste are of great interest towards greener analysis. High-field asymmetric waveform ion mobility spectrometry (FAIMS) utilizes electrical fields to achieve separation, post an ionization source, and could provide an alternative method for separation and reduce solvent use in comparison with traditional HPLC methodologies. In this article, the operational principles and developments of FAIMS will be discussed, including the advantages of adding solvent vapor to the carrier gas. In addition, applications and challenges of implementing FAIMS technology will also be discussed.

  16. Tunable electron heating induced giant magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system

    Science.gov (United States)

    Wang, Zhuo; Samaraweera, R. L.; Reichl, C.; Wegscheider, W.; Mani, R. G.

    2016-12-01

    Electron-heating induced by a tunable, supplementary dc-current (Idc) helps to vary the observed magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system. The magnetoresistance at B = 0.3 T is shown to progressively change from positive to negative with increasing Idc, yielding negative giant-magnetoresistance at the lowest temperature and highest Idc. A two-term Drude model successfully fits the data at all Idc and T. The results indicate that carrier heating modifies a conductivity correction σ1, which undergoes sign reversal from positive to negative with increasing Idc, and this is responsible for the observed crossover from positive- to negative- magnetoresistance, respectively, at the highest B.

  17. High mobility of the strongly confined hole gas in AgTaO3/SrTiO3

    KAUST Repository

    Nazir, Safdar

    2012-05-18

    A theoretical study of the two-dimensional hole gas at the (AgO)−/(TiO2)0 p-type interface in the AgTaO3/SrTiO3 (001) heterostructure is presented. The Ag 4d states strongly hybridize with the O 2p states and contribute to the hole gas. It is demonstrated that the holes are confined to an ultra thin layer (∼4.9Å) with a considerable carrier density of ∼1014cm−2. We estimate a hole mobility of 18.6 cm2 V−1 s−1, which is high enough to enable device applications.

  18. High Speed Mobility Through On-Demand Aviation

    Science.gov (United States)

    Moore, Mark D.; Goodrich, Ken; Viken, Jeff; Smith, Jeremy; Fredericks, Bill; Trani, Toni; Barraclough, Jonathan; German, Brian; Patterson, Michael

    2013-01-01

    automobiles. ?? Community Noise: Hub and smaller GA airports are facing increasing noise restrictions, and while commercial airliners have dramatically decreased their community noise footprint over the past 30 years, GA aircraft noise has essentially remained same, and moreover, is located in closer proximity to neighborhoods and businesses. ?? Operating Costs: GA operating costs have risen dramatically due to average fuel costs of over $6 per gallon, which has constrained the market over the past decade and resulted in more than 50% lower sales and 35% less yearly operations. Infusion of autonomy and electric propulsion technologies can accomplish not only a transformation of the GA market, but also provide a technology enablement bridge for both larger aircraft and the emerging civil Unmanned Aerial Systems (UAS) markets. The NASA Advanced General Aviation Transport Experiments (AGATE) project successfully used a similar approach to enable the introduction of primary composite structures and flat panel displays in the 1990s, establishing both the technology and certification standardization to permit quick adoption through partnerships with industry, academia, and the Federal Aviation Administration (FAA). Regional and airliner markets are experiencing constant pressure to achieve decreasing levels of community emissions and noise, while lowering operating costs and improving safety. But to what degree can these new technology frontiers impact aircraft safety, the environment, operations, cost, and performance? Are the benefits transformational enough to fundamentally alter aircraft competiveness and productivity to permit much greater aviation use for high speed and On-Demand Mobility (ODM)? These questions were asked in a Zip aviation system study named after the Zip Car, an emerging car-sharing business model. Zip Aviation investigates the potential to enable new emergent markets for aviation that offer "more flexibility than the existing transportation solutions

  19. Field effect in the quantum Hall regime of a high mobility graphene wire

    Energy Technology Data Exchange (ETDEWEB)

    Barraud, C., E-mail: cbarraud@phys.ethz.ch, E-mail: clement.barraud@univ-paris-diderot.fr; Choi, T.; Ihn, T.; Ensslin, K. [Solid State Physics Laboratory, ETH Zürich, CH-8093 Zürich (Switzerland); Butti, P.; Shorubalko, I. [Swiss Federal Laboratories of Materials Science and Technologies, EMPA Elect. Metrol. Reliabil. Lab., CH-8600 Dübendorf (Switzerland); Taniguchi, T.; Watanabe, K. [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

    2014-08-21

    In graphene-based electronic devices like in transistors, the field effect applied thanks to a gate electrode allows tuning the charge density in the graphene layer and passing continuously from the electron to the hole doped regime across the Dirac point. Homogeneous doping is crucial to understand electrical measurements and for the operation of future graphene-based electronic devices. However, recently theoretical and experimental studies highlighted the role of the electrostatic edge due to fringing electrostatic field lines at the graphene edges [P. Silvestrov and K. Efetov, Phys. Rev. B 77, 155436 (2008); F. T. Vasko and I. V. Zozoulenko, Appl. Phys. Lett. 97, 092115 (2010)]. This effect originates from the particular geometric design of the samples. A direct consequence is a charge accumulation at the graphene edges giving a value for the density, which deviates from the simple picture of a plate capacitor and also varies along the width of the graphene sample. Entering the quantum Hall regime would, in principle, allow probing this accumulation thanks to the extreme sensitivity of this quantum effect to charge density and the charge distribution. Moreover, the presence of an additional and counter-propagating edge channel has been predicted [P. Silvestrov and K. Efetov, Phys. Rev. B 77, 155436 (2008)] giving a fundamental aspect to this technological issue. In this article, we investigate this effect by tuning a high mobility graphene wire into the quantum Hall regime in which charge carriers probe the electrostatic potential at high magnetic field close to the edges. We observe a slight deviation to the linear shift of the quantum Hall plateaus with magnetic field and we study its evolution for different filling factors, which correspond to different probed regions in real space. We discuss the possible origins of this effect including an increase of the charge density towards the edges.

  20. Field effect in the quantum Hall regime of a high mobility graphene wire

    Science.gov (United States)

    Barraud, C.; Choi, T.; Butti, P.; Shorubalko, I.; Taniguchi, T.; Watanabe, K.; Ihn, T.; Ensslin, K.

    2014-08-01

    In graphene-based electronic devices like in transistors, the field effect applied thanks to a gate electrode allows tuning the charge density in the graphene layer and passing continuously from the electron to the hole doped regime across the Dirac point. Homogeneous doping is crucial to understand electrical measurements and for the operation of future graphene-based electronic devices. However, recently theoretical and experimental studies highlighted the role of the electrostatic edge due to fringing electrostatic field lines at the graphene edges [P. Silvestrov and K. Efetov, Phys. Rev. B 77, 155436 (2008); F. T. Vasko and I. V. Zozoulenko, Appl. Phys. Lett. 97, 092115 (2010)]. This effect originates from the particular geometric design of the samples. A direct consequence is a charge accumulation at the graphene edges giving a value for the density, which deviates from the simple picture of a plate capacitor and also varies along the width of the graphene sample. Entering the quantum Hall regime would, in principle, allow probing this accumulation thanks to the extreme sensitivity of this quantum effect to charge density and the charge distribution. Moreover, the presence of an additional and counter-propagating edge channel has been predicted [P. Silvestrov and K. Efetov, Phys. Rev. B 77, 155436 (2008)] giving a fundamental aspect to this technological issue. In this article, we investigate this effect by tuning a high mobility graphene wire into the quantum Hall regime in which charge carriers probe the electrostatic potential at high magnetic field close to the edges. We observe a slight deviation to the linear shift of the quantum Hall plateaus with magnetic field and we study its evolution for different filling factors, which correspond to different probed regions in real space. We discuss the possible origins of this effect including an increase of the charge density towards the edges.

  1. Job Mobility and Wage Mobility of High- and Low-Paid Workers

    OpenAIRE

    Fouarge, D.; Muffels, R.; Vermunt, J.K.; Pavlopoulos, D

    2007-01-01

    Studies have shown that voluntary job-to-job changes have a positive effect on wage growth. This paper argues that the impact of a job change on wage mobility depends on the position in the wage distribution. Using panel data from the UK and Germany, we show that a change of employer results into a wage increase only for the low paid workers. Within-firm job changes produce, on the average, moderate wage gains for the low-paid workers in Britain, but have no effect in Germany.

  2. High Mobility of Graphene-Based Flexible Transparent Field Effect Transistors Doped with TiO2 and Nitrogen-Doped TiO2.

    Science.gov (United States)

    Wu, Yu-Hsien; Tseng, Po-Yuan; Hsieh, Ping-Yen; Chou, Hung-Tao; Tai, Nyan-Hwa

    2015-05-13

    Graphene with carbon atoms bonded in a honeycomb lattice can be tailored by doping various species to alter the electrical properties of the graphene for fabricating p-type or n-type field-effect transistors (FETs). In this study, large-area and single-layer graphene was grown on electropolished Cu foil using the thermal chemical vapor deposition method; the graphene was then transferred onto a poly(ethylene terephthalate) (PET) substrate to produce flexible, transparent FETs. TiO2 and nitrogen-doped TiO2 (N-TiO2) nanoparticles were doped on the graphene to alter its electrical properties, thereby enhancing the carrier mobility and enabling the transistors to sense UV and visible light optically. The results indicated that the electron mobility of the graphene was 1900 cm(2)/(V·s). Dopings of TiO2 and N-doped TiO2 (1.4 at. % N) lead to n-type doping effects demonstrating extremely high carrier mobilities of 53000 and 31000 cm(2)/(V·s), respectively. Through UV and visible light irradiation, TiO2 and N-TiO2 generated electrons and holes; the generated electrons transferred to graphene channels, causing the FETs to exhibit n-type electric behavior. In addition, the Dirac points of the graphene recovered to their original state within 5 min, confirming that the graphene-based FETs were photosensitive to UV and visible light. In a bending state with a radius of curvature greater than 2.0 cm, the carrier mobilities of the FETs did not substantially change, demonstrating the application possibility of the fabricated graphene-based FETs in photosensors.

  3. Highly immunogenic and fully synthetic peptide-carrier constructs targetting GnRH

    DEFF Research Database (Denmark)

    Beekman, N.J.C.M.; Schaaper, W.M.M.; Turkstra, J.A.;

    1999-01-01

    using a tandem GnRH peptide as a branched polylysine construct, a lipo-thioester, a lipo-amide or a KLH conjugate in CFA, and the lipoamide peptide in an immuno-stimulating complex (ISCOM). We found the lipo-thioester and the branched polylysine constructs to be the most effective carrier molecules...... for the induction of antibodies against GnRH and immunocastration of pigs....

  4. Hold the Phone! High School Students' Perceptions of Mobile Phone Integration in the Classroom

    Science.gov (United States)

    Thomas, Kevin; Muñoz, Marco A.

    2016-01-01

    This study examined the survey responses of 628 high school students in a large urban school district to determine their perceptions of mobile phone use in the classroom. Findings indicated that the majority of students (90.7%) were using a variety of mobile phone features for school-related work. Student support for instructional uses of phones,…

  5. Limits to mobility in InAs quantum wells with nearly lattice-matched barriers

    Science.gov (United States)

    Shojaei, B.; Drachmann, A. C. C.; Pendharkar, M.; Pennachio, D. J.; Echlin, M. P.; Callahan, P. G.; Kraemer, S.; Pollock, T. M.; Marcus, C. M.; Palmstrøm, C. J.

    2016-12-01

    The growth and density dependence of the low temperature mobility of a series of two-dimensional electron systems confined to unintentionally doped, low extended defect density InAs quantum wells with A l1 -xG axSb barriers are reported. The electron-mobility-limiting scattering mechanisms were determined by utilizing dual-gated devices to study the dependence of mobility on carrier density and electric field independently. Analysis of possible scattering mechanisms indicate the mobility was limited primarily by rough interfaces in narrow quantum wells and a combination of alloy disorder and interface roughness in wide wells at high carrier density within the first occupied electronic subband. At low carrier density, the functional dependence of mobility on carrier density provided evidence of Coulombic scattering from charged defects. A gate-tuned electron mobility exceeding 750 000 c m2V-1s-1 was achieved at a sample temperature of 2 K.

  6. Hot electron generation under large-signal radio frequency operation of GaN high-electron-mobility transistors

    Science.gov (United States)

    Latorre-Rey, Alvaro D.; Sabatti, Flavio F. M.; Albrecht, John D.; Saraniti, Marco

    2017-07-01

    In order to assess the underlying physical mechanisms of hot carrier-related degradation such as defect generation in millimeter-wave GaN power amplifiers, we have simulated the electron energy distribution function under large-signal radio frequency conditions in AlGaN/GaN high-electron-mobility transistors. Our results are obtained through a full band Monte Carlo particle-based simulator self-consistently coupled to a harmonic balance circuit solver. At lower frequency, simulations of a Class AB power amplifier at 10 GHz show that the peak hot electron generation is up to 43% lower under RF drive than it is under DC conditions, regardless of the input power or temperature of operation. However, at millimeter-wave operation up to 40 GHz, RF hot carrier generation reaches that from DC biasing and even exceeds it up to 75% as the amplifier is driven into compression. Increasing the temperature of operation also shows that degradation of DC and RF characteristics are tightly correlated and mainly caused by increased phonon scattering. The accurate determination of the electron energy mapping is demonstrated to be a powerful tool for the extraction of compact models used in lifetime and reliability analysis.

  7. Aircraft Carriers

    DEFF Research Database (Denmark)

    Nødskov, Kim; Kværnø, Ole

    There are many indications that China is actively researching the design of an aircraft carrier. It is unknown whether China will initiate the actual acquisition of a carrier, but the indications that are available of their research into aircraft carriers and carrier-capable aircraft, as well...... as their purchases of aircraft carrier systems, makes it more than likely that the country is preparing such an acquisition. China has territorial disputes in the South China Sea over the Spratly Islands and is also worried about the security of its sea lines of communications, by which China transports the majority...... of its foreign trade, as well as its oil imports, upon which the country is totally dependent. China therefore has good reasons for acquiring an aircraft carrier to enable it to protect its national interests. An aircraft carrier would also be a prominent symbol of China’s future status as a great power...

  8. Single Carrier Cyclic Prefix-Assisted CDMA System with Frequency Domain Equalization for High Data Rate Transmission

    Directory of Open Access Journals (Sweden)

    Chin Francois

    2004-01-01

    Full Text Available Multiple-access interference and interfinger interference limit the capacity of conventional single-carrier DS-CDMA systems. Even though multicarrier CDMA posses the advantages of conventional CDMA and OFDM, it suffers from two major implementation difficulties such as peak-to-average power ratio and high sensitivity to frequency offset and RF phase noise. A novel approach based on single-carrier cyclic prefix-assisted CDMA has been proposed to overcome the disadvantages of single-carrier CDMA and multicarrier modulation. The usefulness of the proposed approach for high-speed packet access with simplified channel estimation procedures are investigated in this paper. The paper also proposes a data-dependent pilot structure for the downlink transmission of the proposed system for enhancing pilot-assisted channel estimation in frequency domain. The performance of the proposed pilot structure is compared against the data-independent common pilot structure. The proposed system is extensively simulated for different channel parameters with different channel estimation and equalization methods and the results are compared against conventional multicarrier CDMA systems with identical system specifications.

  9. Single Carrier Cyclic Prefix-Assisted CDMA System with Frequency Domain Equalization for High Data Rate Transmission

    Directory of Open Access Journals (Sweden)

    Madhukumar A. S.

    2004-01-01

    Full Text Available Multiple-access interference and interfinger interference limit the capacity of conventional single-carrier DS-CDMA systems. Even though multicarrier CDMA posses the advantages of conventional CDMA and OFDM, it suffers from two major implementation difficulties such as peak-to-average power ratio and high sensitivity to frequency offset and RF phase noise. A novel approach based on single-carrier cyclic prefix-assisted CDMA has been proposed to overcome the disadvantages of single-carrier CDMA and multicarrier modulation. The usefulness of the proposed approach for high-speed packet access with simplified channel estimation procedures are investigated in this paper. The paper also proposes a data-dependent pilot structure for the downlink transmission of the proposed system for enhancing pilot-assisted channel estimation in frequency domain. The performance of the proposed pilot structure is compared against the data-independent common pilot structure. The proposed system is extensively simulated for different channel parameters with different channel estimation and equalization methods and the results are compared against conventional multicarrier CDMA systems with identical system specifications.

  10. Developing high mobility emissive organic semiconductors towards integrated optoelectronic devices (Conference Presentation)

    Science.gov (United States)

    Dong, Huanli; Hu, Wenping; Heeger, Alan J.

    2016-09-01

    The achievement of organic semiconductors with both high mobility and strong fluorescence emission remains a challenge. High mobility requires molecules which pack densely and periodically, while serious fluorescence quenching typically occurs when fluorescent materials begin to aggregate (aggregation-induced quenching (AIQ)). Indeed, classical materials with strong fluorescent emission always exhibit low mobility, for example, tris(8-hydroxyquinoline) aluminium (ALQ) and phenylenevinylene-based polymers with mobility only 10-6-10-5 cm2V-1s-1, and benchmark organic semiconductors with high mobility demonstrate very weak emission, for example, rubrene exhibits a quantum yield 1% in crystalline state and pentacene shows very weak fluorescence in the solid state. However, organic semiconductors with high mobility and strong fluorescence are necessary for the achievement of high efficiency organic light-emitting transistors (OLETs) and electrically pumped organic lasers. Therefore, it is necessary for developing high mobility emissive organic/polymeric semiconductors towards a fast mover for the organic optoelectronic integrated devices and circuits.

  11. The indicating FTA elute cartridge a solid sample carrier to detect high-risk HPV and high-grade cervical lesions

    NARCIS (Netherlands)

    Bie, R.P. de; Schmeink, C.E.; Bakkers, J.M.J.E.; Snijders, P.J.L.M.; Quint, W.G.V.; Massuger, L.F.A.G.; Bekkers, R.L.M.; Melchers, W.J.G.

    2011-01-01

    The clinically validated high-risk human papillomavirus (hrHPV) Hybrid Capture 2 (HC2) and GP5+/6+-PCR assays were analyzed on an Indicating FTA Elute cartridge (FTA cartridge). The FTA cartridge is a solid dry carrier that allows safe transport of cervical samples. FTA cartridge samples were

  12. Urban malaria in the Brazilian Western Amazon Region I: high prevalence of asymptomatic carriers in an urban riverside district is associated with a high level of clinical malaria

    Directory of Open Access Journals (Sweden)

    Mauro Shugiro Tada

    2007-06-01

    Full Text Available Cross sectional studies on malaria prevalence was performed in 2001, 2002, and 2004 in Vila Candelária, an urban riverside area of Porto Velho, Rondônia, in the Brazilian Western Amazon, followed by longitudinal surveys on malaria incidence. Vila Candelária is a working class district, provided with electricity, water supply, and basic sanitation. Previous preliminary surveys indicated high malaria incidence in this community. At the end of year 2000 regular diagnostic and treatment measures for malaria were introduced, with active search of febrile cases among residents. Despite of both rapid treatment of cases and relative good sanitary and housing conditions, the malaria incidence persisted at high levels during the following years with an annual parasite index of 150 to 300/1000 inhabitants. Parasite surveys in 2001, 2002, and 2004 achieved through microscopy and polymerase chain reaction to diagnose malaria showed a constant high prevalence of asymptomatic carriers for both Plasmodium falciparum and P. vivax parasites. It was concluded that asymptomatic carriers represent an important reservoirs of parasites and that the carriers might contribute to maintaining the high level of transmission. Comparing our findings to similar geo-demographic situations found in other important urban communities of the Brazilian Amazon, we propose that asymptomatic carriers could explain malaria's outbreaks like the one recently observed in Manaus.

  13. High-Speed Mobile Communications in Hostile Environments

    CERN Document Server

    AUTHOR|(SzGeCERN)739920; Sierra, Rodrigo; Chapron, Frederic; CERN. Geneva. IT Department

    2015-01-01

    With the inexorable increase in the use of mobile devices, wireless connectivity is expected by users anywhere, anytime. In general, this requirement is addressed in office buildings or public locations through the use of Wi-Fi technology but Wi-Fi is not well adapted for use in large experiment halls and complex underground environments, especially those where radiation exposure is an issue, such as the LHC tunnel and experimental caverns. 4G/LTE technology, however, looks to be well adapted to addressing mobility needs in such areas. We report here the studies CERN has undertaken on the use of 4G/LTE in the LHC tunnel, presenting results on the data throughput that can be achieved and discussing issues such as the provision of a consistent user experience.

  14. Mobile learning and high-lighting language education

    DEFF Research Database (Denmark)

    Vinther, Jane

    advantage of the social side in their application. The aim has been to make language classes attractive and relevant and to highlight the attractiveness and fun in learning through web 2.0 and mobile units. The overall project was supported by the Danish ministry of education as well as the individual...... time and any firm conclusions cannot be reached until further analyses have been carried out, but will be ready by the time of the conference. It is clear at this point that, the potential imbued in mobile learning and social media have given rise to a strengthening of student participation...... of reasons idiosyncratic to the particular national conditions. This paper gives an account of a diversified national project designed to infuse foreign language learning classes in upper secondary schools in Denmark with renewed enthusiasm through systematically experimenting with the new media by taking...

  15. High-Speed Mobile Communications in Hostile Environments

    Science.gov (United States)

    Agosta, S.; Sierra, R.; Chapron, F.

    2015-12-01

    With the inexorable increase in the use of mobile devices, wireless connectivity is expected by users anywhere, anytime. In general, this requirement is addressed in office buildings or public locations through the use of Wi-Fi technology but Wi-Fi is not well adapted for use in large experiment halls and complex underground environments, especially those where radiation exposure is an issue, such as the LHC tunnel and experimental caverns. 4G/LTE technology, however, looks to be well adapted to addressing mobility needs in such areas. We report here the studies CERN has undertaken on the use of 4G/LTE in the LHC tunnel, presenting results on the data throughput that can be achieved and discussing issues such as the provision of a consistent user experience.

  16. Hierarchical micro-mobility management in high-speed multihop access networks

    Institute of Scientific and Technical Information of China (English)

    TANG Bi-hua; MA Xiao-lei; LIU Yuan-an; GAO Jin-chun

    2006-01-01

    This article integrates the hierarchical micro-mobility management and the high-speed multihop access networks (HMAN), to accomplish the smooth handover between different access routers. The proposed soft handover scheme in the high-speed HMAN can solve the micro-mobility management problem in the access network. This article also proposes the hybrid access router (AR) advertisement scheme and AR selection algorithm, which uses the time delay and stable route to the AR as the gateway selection parameters. By simulation, the proposed micro-mobility management scheme can achieve high packet delivery fraction and improve the lifetime of network.

  17. First-principle theory of high field carrier transport in semiconductors with application to the study of avalanche photodiodes

    Science.gov (United States)

    Moresco, Michele

    2011-12-01

    The objective of this thesis work is twofold: to present a theoretical framework to study high-field carrier transport in semiconductor materials and to provide a deep understanding of the transport properties of GaN and HgCdTe. The validation of this model is performed by applying it to the study of Avalanche Photodiodes. The model we developed is based on Monte Carlo techniques and it includes the full details of the band structure, derived from the empirical pseudopotential method (EPM), and a numerically calculated impact ionization transition rate based on a wave-vector dependent dielectric function. The nonpolar carrier-phonon interaction is treated within the framework of the rigid pseudoion (RPI) approximation using ab initio techniques to determine the phonon dispersion relation. The calculated phonon scattering rates are consistent with the electronic structure and the phonon dispersion relation thus removing adjustable parameters such as deformation potential coefficients. Band-to-band carrier tunneling has been treated by solving the time-dependent multiband Schroedinger equation. The multiband description predicts a considerable increase of the impact ionization coefficients compared with simulations not considering tunneling. Specifically, the present model has been applied to the study of two distinct semiconductor materials: GaN and HgCdTe. The former is a wide bandgap while the second is a narrow bandgap semiconductor. In spite of their constantly increasing technological reliability both materials lack theoretical understanding of high-field carrier transport. Avalanche photodiodes (APDs) offer an ideal environment to test and validate the model developed in this thesis work because of the large electric field involved in these devices. APDs based on both GaN and HgCdTe are investigated, consistently with the physics-based models described above. Key quantities such as gain, breakdown voltage, bandwidth and noise characteristics are estimated. The

  18. Current collapse imaging of Schottky gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation measurement

    Energy Technology Data Exchange (ETDEWEB)

    Katsuno, Takashi, E-mail: e1417@mosk.tytlabs.co.jp; Ishikawa, Tsuyoshi; Ueda, Hiroyuki; Uesugi, Tsutomu [Toyota Central R and D Laboratories Inc., Nagakute, Aichi 480-1192 (Japan); Manaka, Takaaki; Iwamoto, Mitsumasa [Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552 (Japan)

    2014-06-23

    Two-dimensional current collapse imaging of a Schottky gate AlGaN/GaN high electron mobility transistor device was achieved by optical electric field-induced second-harmonic generation (EFISHG) measurements. EFISHG measurements can detect the electric field produced by carriers trapped in the on-state of the device, which leads to current collapse. Immediately after (e.g., 1, 100, or 800 μs) the completion of drain-stress voltage (200 V) in the off-state, the second-harmonic (SH) signals appeared within 2 μm from the gate edge on the drain electrode. The SH signal intensity became weak with time, which suggests that the trapped carriers are emitted from the trap sites. The SH signal location supports the well-known virtual gate model for current collapse.

  19. Step-taper active-region quantum cascade lasers for carrier-leakage suppression and high internal differential efficiency

    Science.gov (United States)

    Kirch, J. D.; Chang, C.-C.; Boyle, C.; Mawst, L. J.; Lindberg, D.; Earles, T.; Botez, D.

    2016-03-01

    By stepwise tapering both the barrier heights and quantum-well depths in the active regions of 8.7 μm- and 8.4 μm-emitting quantum cascade lasers (QCLs) virtually complete carrier-leakage suppression is achieved, as evidenced by high values for both the threshold-current characteristic temperature coefficient T0 (283 K and 242 K) and the slope-efficiency characteristic temperature coefficient T1 (561 K and 279 K), over the 20-60 °C heatsink-temperature range, for low- and high-doped devices, respectively. Such high values are obtained while the threshold-current density is kept relatively low for 35-period, low- and high-doped devices: 1.58 kA/cm2 and 1.88 kA/cm2, respectively. In addition, due to resonant extraction from the lower laser level, high differential-transition-efficiency values (89-90%) are obtained. In turn, the slope-efficiency for 3 mm-long, 35-period high-reflectivity (HR)-coated devices are: 1.15-1.23 W/A; that is, 30- 40 % higher than for same-geometry and similar-doping conventional 8-9 μm-emitting QCLs. As a result of both efficient carrier-leakage suppression as well as fast and efficient carrier extraction, the values for the internal differential efficiency are found to be ≍ 86%, by comparison to typical values in the 58-67 % range for conventional QCLs emitting in the 7-11 μm wavelength range.

  20. Clock and carrier recovery in high-speed coherent optical communication systems

    Science.gov (United States)

    Amado, Sofia B.; Ferreira, Ricardo; Costa, Pedro S.; Guiomar, Fernando P.; Ziaie, Somayeh; Teixeira, António L.; Muga, Nelson J.; Pinto, Armando N.

    2014-08-01

    In this paper, the implementations of clock and carrier recovery in digital domain are analyzed. Hardware implementation details, resources estimation and real-time results are presented. Analog-to-Digital Converters (ADC), operating at 1.25Gsa/s, and a Virtex-6 Field-Programmable Gate Array (FPGA), have been used, allowing the implementation of a real-time Quadrature Phase Shift Keying (QPSK) system operating at 1.25Gb/s. The real-time mode operation is successfully demonstrated over 80 km of Standard Single Mode Fiber (SSMF).

  1. Ultra high hole mobilities in a pure strained Ge quantum well

    Energy Technology Data Exchange (ETDEWEB)

    Mironov, O.A., E-mail: OAMironov@yahoo.co.uk [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); International Laboratory of High Magnetic Fields and Low Temperatures, 53-421 Wroclaw (Poland); Hassan, A.H.A. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Department of Physics, Tripoli University, Tripoli (Libya); Morris, R.J.H.; Dobbie, A. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Uhlarz, M. [High Magnetic Field Laboratory, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden (Germany); Chrastina, D. [L-NESS Politecnico di Milano, Polo di Como, Via Anzani 42, 22100 Como (Italy); Hague, J.P. [Department of Physical Sciences, The Open University, Walton Hall, Milton Keynes MK7 6AA (United Kingdom); Kiatgamolchai, S. [Department of Physics, Faculty of Science, Chulalongkorn University, 254 Phayathai Road, Pathumwan, Bangkok 10330 (Thailand); Beanland, R. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Gabani, S. [Centre of Low Temperature Physics, Institute of Experimental Physics SAS, Košice (Slovakia); Berkutov, I.B. [B.I. Verkin Institute for Low Temperature Physics and Engineering of NAS of Ukraine, Kharkov (Ukraine); Helm, M.; Drachenko, O. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden (Germany); Myronov, M.; Leadley, D.R. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

    2014-04-30

    Hole mobilities at low and room temperature (RT) have been studied for a strained sGe/SiGe heterostructure using standard Van der Pauw resistivity and Hall effect measurements. The range of magnetic field and temperatures used were − 14 T < B < + 14 T and 1.5 K < T < 300 K respectively. Using maximum entropy-mobility spectrum analysis (ME-MSA) and Bryan's algorithm mobility spectrum (BAMS) analysis, a RT two dimensional hole gas drift mobility of (3.9 ± 0.4) × 10{sup 3} cm{sup 2}/V s was determined for a sheet density (p{sub s}) 9.8 × 10{sup 10} cm{sup −2} (by ME-MSA) and (3.9 ± 0.2) × 10{sup 3} cm{sup 2}/V s for a sheet density (p{sub s}) 5.9 × 10{sup 10} cm{sup −2} (by BAMS). - Highlights: • Pure strained Ge channel grown by reduced pressure chemical vapor deposition • Maximum entropy-mobility spectrum analysis • Bryan's algorithm mobility spectrum analysis • High room temperature hole drift mobility of (3.9 ± 0.4) × 10{sup 3} cm{sup 2}/V s • Extremely high hole mobility of 1.1 × 10{sup 6} cm{sup 2}/V s at 12 K.

  2. Correlation between Photoluminescence and Carrier Transport and a Simple In Situ Passivation Method for High-Bandgap Hybrid Perovskites.

    Science.gov (United States)

    Stoddard, Ryan J; Eickemeyer, Felix T; Katahara, John K; Hillhouse, Hugh W

    2017-07-20

    High-bandgap mixed-halide hybrid perovskites have higher open-circuit voltage deficits and lower carrier diffusion lengths than their lower-bandgap counterparts. We have developed a ligand-assisted crystallization (LAC) technique that introduces additives in situ during the solvent wash and developed a new method to dynamically measure the absolute intensity steady-state photoluminescence and the mean carrier diffusion length simultaneously. The measurements reveal four distinct regimes of material changes and show that photoluminescence brightening often coincides with losses in carrier transport, such as in degradation or phase segregation. Further, the measurements enabled optimization of LAC on the 1.75 eV bandgap FA0.83Cs0.17Pb(I0.66Br0.34)3, resulting in an enhancement of the photoluminescence quantum yield (PLQY) of over an order of magnitude, an increase of 80 meV in the quasi-Fermi level splitting (to 1.29 eV), an increase in diffusion length by a factor of 3.5 (to over 1 μm), and enhanced open-circuit voltage and short-circuit current from photovoltaics fabricated from the LAC-treated films.

  3. Optimizing the Dopant and Carrier Concentration of Ca5Al2Sb6 for High Thermoelectric Efficiency

    Science.gov (United States)

    Yan, Yuli; Zhang, Guangbiao; Wang, Chao; Peng, Chengxiao; Zhang, Peihong; Wang, Yuanxu; Ren, Wei

    2016-01-01

    The effects of doping on the transport properties of Ca5Al2Sb6 are investigated using first-principles electronic structure methods and Boltzmann transport theory. The calculated results show that a maximum ZT value of 1.45 is achieved with an optimum carrier concentration at 1000 K. However, experimental studies have shown that the maximum ZT value is no more than 1 at 1000 K. By comparing the calculated Seebeck coefficient with experimental values, we find that the low dopant solubility in this material is not conductive to achieve the optimum carrier concentration, leading a smaller experimental value of the maximum ZT. Interestingly, the calculated dopant formation energies suggest that optimum carrier concentrations can be achieved when the dopants and Sb atoms have similar electronic configurations. Therefore, it might be possible to achieve a maximum ZT value of 1.45 at 1000 K with suitable dopants. These results provide a valuable theoretical guidance for the synthesis of high-performance bulk thermoelectric materials through dopants optimization. PMID:27406178

  4. Investigation of Doppler Effects on high mobility OFDM-MIMO systems with the support of High Altitude Platforms (HAPs)

    Science.gov (United States)

    Mohammed, H. A.; Sibley, M. J. N.; Mather, P. J.

    2012-05-01

    The merging of Orthogonal Frequency Division Multiplexing (OFDM) with Multiple-input multiple-output (MIMO) is a promising mobile air interface solution for next generation wireless local area networks (WLANs) and 4G mobile cellular wireless systems. This paper details the design of a highly robust and efficient OFDM-MIMO system to support permanent accessibility and higher data rates to users moving at high speeds, such as users travelling on trains. It has high relevance for next generation wireless local area networks (WLANs) and 4G mobile cellular wireless systems. The paper begins with a comprehensive literature review focused on both technologies. This is followed by the modelling of the OFDM-MIMO physical layer based on Simulink/Matlab that takes into consideration high vehicular mobility. Then the entire system is simulated and analysed under different encoding and channel estimation algorithms. The use of High Altitude Platform system (HAPs) technology is considered and analysed.

  5. Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals

    Science.gov (United States)

    Wei Shih, Chen; Chin, Albert; Fu Lu, Chun; Fang Su, Wei

    2016-01-01

    High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO2 thickness for both active channel and source-drain regions, very high 147 cm2/Vs field-effect mobility, high ION/IOFF of 2.3 × 107, small 110 mV/dec sub-threshold slope, and a low VD of 2.5 V for low power operation. This mobility is already better than chemical-vapor-deposition grown multi-layers MoS2 TFT. From first principle quantum-mechanical calculation, the high mobility TFT is due to strongly overlapped orbitals.

  6. Interfacial Study To Suppress Charge Carrier Recombination for High Efficiency Perovskite Solar Cells.

    Science.gov (United States)

    Adhikari, Nirmal; Dubey, Ashish; Khatiwada, Devendra; Mitul, Abu Farzan; Wang, Qi; Venkatesan, Swaminathan; Iefanova, Anastasiia; Zai, Jiantao; Qian, Xuefeng; Kumar, Mukesh; Qiao, Qiquan

    2015-12-09

    We report effects of an interface between TiO2-perovskite and grain-grain boundaries of perovskite films prepared by single step and sequential deposited technique using different annealing times at optimum temperature. Nanoscale kelvin probe force microscopy (KPFM) measurement shows that charge transport in a perovskite solar cell critically depends upon the annealing conditions. The KPFM results of single step and sequential deposited films show that the increase in potential barrier suppresses the back-recombination between electrons in TiO2 and holes in perovskite. Spatial mapping of the surface potential within perovskite film exhibits higher positive potential at grain boundaries compared to the surface of the grains. The average grain boundary potential of 300-400 mV is obtained upon annealing for sequentially deposited films. X-ray diffraction (XRD) spectra indicate the formation of a PbI2 phase upon annealing which suppresses the recombination. Transient analysis exhibits that the optimum device has higher carrier lifetime and short carrier transport time among all devices. An optimum grain boundary potential and proper band alignment between the TiO2 electron transport layer (ETL) and the perovskite absorber layer help to increase the overall device performance.

  7. High Precision GNSS Guidance for Field Mobile Robots

    Directory of Open Access Journals (Sweden)

    Ladislav Jurišica

    2012-11-01

    Full Text Available In this paper, we discuss GNSS (Global Navigation Satellite System guidance for field mobile robots. Several GNSS systems and receivers, as well as multiple measurement methods and principles of GNSS systems are examined. We focus mainly on sources of errors and investigate diverse approaches for precise measuring and effective use of GNSS systems for real‐ time robot localization. The main body of the article compares two GNSS receivers and their measurement methods. We design, implement and evaluate several mathematical methods for precise robot localization.

  8. Solution-Processed Organic-Inorganic Perovskite Field-Effect Transistors with High Hole Mobilities.

    Science.gov (United States)

    Matsushima, Toshinori; Hwang, Sunbin; Sandanayaka, Atula S D; Qin, Chuanjiang; Terakawa, Shinobu; Fujihara, Takashi; Yahiro, Masayuki; Adachi, Chihaya

    2016-12-01

    A very high hole mobility of 15 cm(2) V(-1) s(-1) along with negligible hysteresis are demonstrated in transistors with an organic-inorganic perovskite semiconductor. This high mobility results from the well-developed perovskite crystallites, improved conversion to perovskite, reduced hole trap density, and improved hole injection by employing a top-contact/top-gate structure with surface treatment and MoOx hole-injection layers.

  9. Reliable content delivery using persistent data sessions in a highly mobile environment

    OpenAIRE

    Pantoleon, Periklis K.

    2004-01-01

    Approved for public release; distribution is unlimited Special Forces are crucial in specific military operations. They usually operate in hostile territory where communications are difficult to establish and preserve, since the operations are often carried out in a remote environment and the communications need to be highly mobile. The delivery of information about the geographical parameters of the area can be crucial for the completion of their mission. But in that highly mobile environ...

  10. A high-flux BEC source for mobile atom interferometers

    CERN Document Server

    Rudolph, Jan; Grzeschik, Christoph; Sternke, Tammo; Grote, Alexander; Popp, Manuel; Becker, Dennis; Müntinga, Hauke; Ahlers, Holger; Peters, Achim; Lämmerzahl, Claus; Sengstock, Klaus; Gaaloul, Naceur; Ertmer, Wolfgang; Rasel, Ernst M

    2015-01-01

    Quantum sensors based on coherent matter-waves are precise measurement devices whose ultimate accuracy is achieved with Bose-Einstein condensates (BEC) in extended free fall. This is ideally realized in microgravity environments such as drop towers, ballistic rockets and space platforms. However, the transition from lab-based BEC machines to robust and mobile sources with comparable performance is a technological challenge. Here we report on the realization of a miniaturized setup, generating a flux of $4 \\times 10^5$ quantum degenerate $^{87}$Rb atoms every 1.6 s. Ensembles of $1 \\times 10^5$ atoms can be produced at a 1 Hz rate. This is achieved by loading a cold atomic beam directly into a multi-layer atom chip that is designed for efficient transfer from laser-cooled to magnetically trapped clouds. The attained flux of degenerate atoms is on par with current lab-based experiments while offering significantly higher repetition rates. The compact and robust design allows for mobile operation in a variety of...

  11. High-mobility BaSnO3 grown by oxide molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Santosh Raghavan

    2016-01-01

    Full Text Available High-mobility perovskite BaSnO3 films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO3 films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE approach, which supplies pre-oxidized SnOx. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO3. We demonstrate room temperature electron mobilities of 150 cm2 V−1 s−1 in films grown on PrScO3. The results open up a wide range of opportunities for future electronic devices.

  12. High-mobility BaSnO{sub 3} grown by oxide molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Raghavan, Santosh; Schumann, Timo; Kim, Honggyu; Zhang, Jack Y.; Cain, Tyler A.; Stemmer, Susanne, E-mail: stemmer@mrl.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

    2016-01-01

    High-mobility perovskite BaSnO{sub 3} films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO{sub 3} films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO{sub x}. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO{sub 3}. We demonstrate room temperature electron mobilities of 150 cm{sup 2} V{sup −1} s{sup −1} in films grown on PrScO{sub 3}. The results open up a wide range of opportunities for future electronic devices.

  13. A Programmable Resilient High-Mobility SDN+NFV Architecture for UAV Telemetry Monitoring

    Science.gov (United States)

    White, Kyle J. S.; Pezaros, Dimitrios P.; Denney, Ewen; Knudson, Matt D.

    2017-01-01

    With the explosive growth in UAV numbers forecast worldwide, a core concern is how to manage the ad-hoc network configuration required for mobility management. As UAVs migrate among ground control stations, associated network services, routing and operational control must also rapidly migrate to ensure a seamless transition. In this paper, we present a novel, lightweight and modular architecture which supports high mobility, resilience and flexibility through the application of SDN and NFV principles on top of the UAV infrastructure. By combining SDN programmability and Network Function Virtualization we can achieve resilient infrastructure migration of network services, such as network monitoring and anomaly detection, coupled with migrating UAVs to enable high mobility management. Our container-based monitoring and anomaly detection Network Functions (NFs) can be tuned to specific UAV models providing operators better insight during live, high-mobility deployments. We evaluate our architecture against telemetry from over 80flights from a scientific research UAV infrastructure.

  14. Generation of tunable, high repetition rate frequency combs with equalized spectra using carrier injection based silicon modulators

    Science.gov (United States)

    Nagarjun, K. P.; Selvaraja, Shankar Kumar; Supradeepa, V. R.

    2016-03-01

    High repetition-rate frequency combs with tunable repetition rate and carrier frequency are extensively used in areas like Optical communications, Microwave Photonics and Metrology. A common technique for their generation is strong phase modulation of a CW-laser. This is commonly implemented using Lithium-Niobate based modulators. With phase modulation alone, the combs have poor spectral flatness and significant number of missing lines. To overcome this, a complex cascade of multiple intensity and phase modulators are used. A comb generator on Silicon based on these principles is desirable to enable on-chip integration with other functionalities while reducing power consumption and footprint. In this work, we analyse frequency comb generation in carrier injection based Silicon modulators. We observe an interesting effect in these comb generators. Enhanced absorption accompanying carrier injection, an undesirable effect in data modulators, shapes the amplitude here to enable high quality combs from a single modulator. Thus, along with reduced power consumption to generate a specific number of lines, the complexity has also been significantly reduced. We use a drift-diffusion solver and mode solver (Silvaco TCAD) along with Soref-Bennett relations to calculate the variations in refractive indices and absorption of an optimized Silicon PIN - waveguide modulator driven by an unbiased high frequency (10 Ghz) voltage signal. Our simulations demonstrate that with a device length of 1 cm, a driving voltage of 2V and minor shaping with a passive ring-resonator filter, we obtain 37 lines with a flatness better than 5-dB across the band and power consumption an order of magnitude smaller than Lithium-Niobate modulators.

  15. High-performance evanescently-coupled uni-traveling-carrier photodiodes

    Institute of Scientific and Technical Information of China (English)

    Zhang Yun-Xiao; Liao Zai-Yi; Wang Wei

    2009-01-01

    A new evanescently-coupled uni-traveling-carrier photodiode (EC-UTC PD) based on a multimode diluted waveguide (MDW) structure is fabricated, analysed and characterized. Optical and electrical characteristics of the device are investigated. The excellent characteristics are demonstrated such as a responsivity of 0.36 A/W, a bandwidth of 11.5 GHz and a small-signal 1-dB compression current greater than 18 mA at 10 GHz. The saturation current is significantly improved compared with those of similar evanescently-coupled pin photodiodes. The radio frequency (RF)bandwidth can be further improved by eliminating RF losses induced by the cables, the probe and the bias tee between the photodiode and the spectrum analyzer.

  16. Coexistence of bulk and surface states probed by Shubnikov-de Haas oscillations in Bi2Se3 with high charge-carrier density

    Science.gov (United States)

    de Vries, E. K.; Pezzini, S.; Meijer, M. J.; Koirala, N.; Salehi, M.; Moon, J.; Oh, S.; Wiedmann, S.; Banerjee, T.

    2017-07-01

    Topological insulators are ideally represented as having an insulating bulk with topologically protected, spin-textured surface states. However, it is increasingly becoming clear that these surface transport channels can be accompanied by a finite conducting bulk, as well as additional topologically trivial surface states. To investigate these parallel conduction transport channels, we studied Shubnikov-de Haas oscillations in Bi2Se3 thin films, in high magnetic fields up to 30 T so as to access channels with a lower mobility. We identify a clear Zeeman-split bulk contribution to the oscillations from a comparison between the charge-carrier densities extracted from the magnetoresistance and the oscillations. Furthermore, our analyses indicate the presence of a two-dimensional state and signatures of additional states the origin of which cannot be conclusively determined. Our findings underpin the necessity of theoretical studies on the origin of and the interplay between these parallel conduction channels for a careful analysis of the material's performance.

  17. Improved charge carrier lifetime in planar perovskite solar cells by bromine doping

    Science.gov (United States)

    Kiermasch, David; Rieder, Philipp; Tvingstedt, Kristofer; Baumann, Andreas; Dyakonov, Vladimir

    2016-12-01

    The charge carrier lifetime is an important parameter in solar cells as it defines, together with the mobility, the diffusion length of the charge carriers, thus directly determining the optimal active layer thickness of a device. Herein, we report on charge carrier lifetime values in bromine doped planar methylammonium lead iodide (MAPbI3) solar cells determined by transient photovoltage. The corresponding charge carrier density has been derived from charge carrier extraction. We found increased lifetime values in solar cells incorporating bromine compared to pure MAPbI3 by a factor of ~2.75 at an illumination intensity corresponding to 1 sun. In the bromine containing solar cells we additionally observe an anomalously high value of extracted charge, which we deduce to originate from mobile ions.

  18. A New Multilevel Converter Structure For High-Power Applications using Multi-carrier PWM Switching Strategy

    Directory of Open Access Journals (Sweden)

    Rasoul Shalchi Alishah

    2015-06-01

    Full Text Available In recent, several numbers of multilevel inverter structures have been introduced that the numbers of circuit devices have been reduced.  This paper introduces a new structure for multilevel inverter which can be used in high-power applications. The proposed topology is based on cascaded connection of basic units. This topology consists of minimum number of circuit components such as IGBT, gate driver circuit and antiparallel diode. For proposed topology, two methods are presented for determination of dc voltage sources values. Multi-carrier PWM method for 25-level proposed topology is used. Verification of the analytical results is done using MATLAB simulation.

  19. Analytical Estimation of Carrier Phase Recovery Approaches in Long-Haul High-Speed Optical Communication Systems

    CERN Document Server

    Xu, Tianhua

    2016-01-01

    The analytical study on the carrier phase estimation (CPE) approaches, involving a one-tap normalized least-mean-square (NLMS) algorithm, a block-wise average (BWA) algorithm, and a Viterbi-Viterbi (VV) algorithm has been investigated in the long-haul high-speed n-level phase shift keying (n-PSK) coherent optical fiber communication systems. The close-form predictions for the bit-error-rate (BER) performance have been derived and analyzed by considering both the intrinsic laser phase noise and the equalization enhanced phase noise (EEPN).

  20. Feasibility of high-speed power line carrier system to Japanese overhead low voltage distribution lines; Teiatsu haidensen hanso no kosokuka no kanosei (hanso sningo denpa purogram no kanosei)

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, T.; Takeshita, K.; Ishino, R.

    2000-06-01

    The high-speed distribution line carrier systems on underground distribution lines are being developed in Germany. To estimate these systems on Japanese overhead low voltage distribution lines, the Carrier Propagation Program has been developed and applicability of OFDM system was roughly estimated. 1. Carrier Propagation Program Carrier Propagation Program that calculates the carrier propagation characteristics of any line structure was developed. 2. Carrier propagation characteristics Carrier propagation characteristics on typical Japanese overhead low voltage distribution lines were calculated 3.Rough estimation of OFDM system Electric fields caused by carrier at near point were calculated on the basis on carrier propagation characteristics. Results of rough estimation are as follows: - Electric field caused by carrier of more than 2Mbps system exceeds the value of the regulation. (author)

  1. High mobility In{sub 2}O{sub 3}:H transparent conductive oxides prepared by atomic layer deposition and solid phase crystallization

    Energy Technology Data Exchange (ETDEWEB)

    Macco, B.; Wu, Y.; Vanhemel, D. [Department of Applied Physics, Eindhoven University of Technology (Netherlands); Kessels, W.M.M. [Department of Applied Physics, Eindhoven University of Technology (Netherlands); Solliance Solar Research, Eindhoven (Netherlands)

    2014-12-01

    The preparation of high-quality In{sub 2}O{sub 3}:H, as transparent conductive oxide (TCO), is demonstrated at low temperatures. Amorphous In{sub 2}O{sub 3}:H films were deposited by atomic layer deposition at 100 C, after which they underwent solid phase crystallization by a short anneal at 200 C. TEM analysis has shown that this approach can yield films with a lateral grain size of a few hundred nm, resulting in electron mobility values as high as 138 cm{sup 2}/V s at a device-relevant carrier density of 1.8 x 10{sup 20} cm{sup -3}. Due to the extremely high electron mobility, the crystallized films simultaneously exhibit a very low resistivity (0.27 mΩ cm) and a negligible free carrier absorption. In conjunction with the low temperature processing, this renders these films ideal candidates for front TCO layers in for example silicon heterojunction solar cells and other sensitive optoelectronic applications. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Study on the saturation characteristics of high-speed uni-traveling-carrier photodiodes based on field screening analysis

    Institute of Scientific and Technical Information of China (English)

    Tuo Shi; Bing Xiong; Changzheng Sun; Yi Luo

    2011-01-01

    A back-illuminated mesa-Structure InGaAs/InP charge-compensated uni-traveling-carrier (UTC) photodi-ode (PD) is fabricated, and its saturation characteristics are investigated. The responsivity of the 40-μm-diameter PD is as high as 0.83 A/W, and the direct current (DC) saturation current is up to 275 mA. The 1-dB compression point at the 3-dB cutoff frequency of 9 GHz is measured to be 100 mA, corresponding to an output radio frequency (RP) power of up to 20.1 dBm. According to the calculated electric field distributions in the depleted region under both DC and alternating current (AC) conditions, the saturation of the UTC-PD is caused by complete field screening at high optical injection levels.%@@ A back-illuminated mesa-structure InGaAs/InP charge-compensated uni-traveling-carrier(UTC) photodiode(PD) is fabricated,and its saturation characteristics are investigated.The responsivity of the 40-μmdiameter PD is as high as 0.83 A/W,and the direct current(DC) saturation current is up to 275 Ma.

  3. Field-effect transistors of high-mobility few-layer SnSe2

    Science.gov (United States)

    Guo, Chenglei; Tian, Zhen; Xiao, Yanjun; Mi, Qixi; Xue, Jiamin

    2016-11-01

    We report the transport properties of mechanically exfoliated few-layer SnSe2 flakes, whose mobility is found to be ˜85 cm2 V-1 s-1 at 300 K, higher than those of the majority of few-layer transitional metal dichalcogenides. The mobility increases strongly with decreased temperature, indicating a phonon limited transport. The conductivity of the semiconducting SnSe2 shows a metallic behavior, which is explained by two competing factors involving the different temperature dependence of mobility and carrier density. The Fermi level is found to be 87 meV below the conduction band minima (CBM) at 300 K and 12 meV below the CBM at 78 K, resulting from a heavy n-type doping. Previous studies have found SnSe2 field-effect transistors to be very difficult to turn off. We find the limiting factor to be the flake thickness compared with the maximum depletion width. With fully depleted devices, we are able to achieve a current on-off ratio of ˜105. These results demonstrate the great potential of SnSe2 as a two dimensional (2D) semiconducting material and are helpful for our understanding of other heavily doped 2D materials.

  4. Charge carrier transport at the nanoscale: Electron and hole transport in self-assembled discotic liquid crystals: Mobile ionic charges in nanocomposite solid electrolytes

    NARCIS (Netherlands)

    Haverkate, L.A.

    2013-01-01

    This thesis explores some fundamental aspects of charge carrier transport at the nanoscale. The study is divided in two parts. In the first part, the structural, dynamical and vibrational properties of discotic liquid crystals are studied in relation to the potential of these self-assembled ‘mesopha

  5. Identity Efficiency for High-Performance Ambient Pressure Ion Mobility Spectrometry.

    Science.gov (United States)

    Kanu, A Bakarr; Leal, Anne

    2016-03-15

    A new approach to reduce the false-positive responses commonly encountered in the field when drugs and explosives are detected is reported for an electrospray ionization high-performance ion mobility spectrometry (ESI-HPIMS). In this article, we report on the combination of reduced mobility and the width-at-half-height of a peak to give a new parameter called conditional reduced mobility (CRM). It was found that the CRM was capable of differentiating between real drugs peaks from that of a false-positive peak and may help to reduce false-positive rates. This effect was demonstrated using 11 drugs (amphetamine, cannabidiol, cocaine, codeine, heroine, methamphetamine, morphine, phentermine, L-phenylepherine, proglitazone, and rosiglitazone) and seven interferences chosen from off-the-shelf products. This report determined and compared CRM, resolving power (R(m)), and diffusion-limited conditional theoretical reduced mobility (DLCTRM) for ESI-HPIMS. The most important parameters for determining CRM are reduced mobility and width-at-half-height of a peak. There is a specific optimum voltage, gate pulse width, resolving power, and now CRM for each ion. DLCTRM indicate the optimum reduced mobility that is not normally possible under field conditions. CRM predicts the condition at which a target compound can be differentiated from a false-positive response. This was possible because different ions exhibits different drifting patterns and hence a different peak broadening phenomenon inside an ion mobility tube. Reduced mobility for target compounds reported were reproducible to within 2% for ESI-HPIMS. The estimated resolving power for the ESI-HPIMS used in this study was 61 ± 0.22. Conditional reduced mobility introduced in this paper show differences between target compounds and false-positive peaks as high as 74%, as was the case for cannabidiol and interference #1 at 70 μs gate pulse width.

  6. Mobility dependent recombination models for organic solar cells

    Science.gov (United States)

    Wagenpfahl, Alexander

    2017-09-01

    Modern solar cell technologies are driven by the effort to enhance power conversion efficiencies. A main mechanism limiting power conversion efficiencies is charge carrier recombination which is a direct function of the encounter probability of both recombination partners. In inorganic solar cells with rather high charge carrier mobilities, charge carrier recombination is often dominated by energetic states which subsequently trap both recombination partners for recombination. Free charge carriers move fast enough for Coulomb attraction to be irrelevant for the encounter probability. Thus, charge carrier recombination is independent of charge carrier mobilities. In organic semiconductors charge carrier mobilities are much lower. Therefore, electrons and holes have more time react to mutual Coulomb-forces. This results in the strong charge carrier mobility dependencies of the observed charge carrier recombination rates. In 1903 Paul Langevin published a fundamental model to describe the recombination of ions in gas-phase or aqueous solutions, known today as Langevin recombination. During the last decades this model was used to interpret and model recombination in organic semiconductors. However, certain experiments especially with bulk-heterojunction solar cells reveal much lower recombination rates than predicted by Langevin. In search of an explanation, many material and device properties such as morphology and energetic properties have been examined in order to extend the validity of the Langevin model. A key argument for most of these extended models is, that electron and hole must find each other at a mutual spatial location. This encounter may be limited for instance by trapping of charges in trap states, by selective electrodes separating electrons and holes, or simply by the morphology of the involved semiconductors, making it impossible for electrons and holes to recombine at high rates. In this review, we discuss the development of mobility limited

  7. Design of a high-mobility multi-terrain robot based on eccentric paddle mechanism

    OpenAIRE

    Sun, Yi; Yang, Yang; Ma, Shugen; Pu, Huayan

    2016-01-01

    Gaining high mobility on versatile terrains is a crucial target for designing a mobile robot toward tasks such as search and rescue, scientific exploration, and environment monitoring. Inspired by dextrous limb motion of animals, a novel form of locomotion has been established in our previous study, by proposing an eccentric paddle mechanism (ePaddle) for integrating paddling motion into a traditional wheeled mechanism. In this paper, prototypes of an ePaddle mechanism and an ePaddle-based qu...

  8. High Throughput via Cross-Layer Interference Alignment for Mobile Ad Hoc Networks

    Science.gov (United States)

    2013-08-26

    hoc networks ( MANETS ) under practical assumptions. Several problems were posed and solved that provide insight into when and how interference alignment...REPORT High Throughput via Cross-Layer Interference Alignment for Mobile Ad Hoc Networks 14. ABSTRACT 16. SECURITY CLASSIFICATION OF: Recent...investigations into the fundamental limits of mobile ad hoc networks have produced a physical layer method for approaching their capacity. This strategy, known

  9. Many Mobile Health Apps Target High-Need, High-Cost Populations, But Gaps Remain.

    Science.gov (United States)

    Singh, Karandeep; Drouin, Kaitlin; Newmark, Lisa P; Lee, JaeHo; Faxvaag, Arild; Rozenblum, Ronen; Pabo, Erika A; Landman, Adam; Klinger, Elissa; Bates, David W

    2016-12-01

    With rising smartphone ownership, mobile health applications (mHealth apps) have the potential to support high-need, high-cost populations in managing their health. While the number of available mHealth apps has grown substantially, no clear strategy has emerged on how providers should evaluate and recommend such apps to patients. Key stakeholders, including medical professional societies, insurers, and policy makers, have largely avoided formally recommending apps, which forces patients to obtain recommendations from other sources. To help stakeholders overcome barriers to reviewing and recommending apps, we evaluated 137 patient-facing mHealth apps-those intended for use by patients to manage their health-that were highly rated by consumers and recommended by experts and that targeted high-need, high-cost populations. We found that there is a wide variety of apps in the marketplace but that few apps address the needs of the patients who could benefit the most. We also found that consumers' ratings were poor indications of apps' clinical utility or usability and that most apps did not respond appropriately when a user entered potentially dangerous health information. Going forward, data privacy and security will continue to be major concerns in the dissemination of mHealth apps. Project HOPE—The People-to-People Health Foundation, Inc.

  10. Time-of-flight analysis of charge mobility in a Cu-phthalocyanine-based discotic liquid crystal semiconductor

    Science.gov (United States)

    Fujikake, Hideo; Murashige, Takeshi; Sugibayashi, Makiko; Ohta, Kazuchika

    2004-10-01

    We used a time-of-flight method to study the charge carrier mobility properties of a molecular-aligned discotic liquid crystal semiconductor based on Cu-phthalocyanine. The heated isotropic-phase semiconductor material was sandwiched between transparent electrodes coated onto glass substrates without conventional alignment layers. This was then cooled, and a discotic liquid crystal semiconductor cell was obtained, which we used to make mobility measurements. The material had a fixed molecular alignment due to the supercooling of the hexagonal columnar mesophase. It was clarified that the carrier mobility for electrons was as high as it was for holes at room temperature. The maximum value of negative charge mobility reached 2.60×10-3cm2/Vs, although negative carrier mobility is often much lower than positive carrier mobility in other organic semiconductors, including conventional Cu-phthalocyanine vacuum-deposited films.

  11. Enhanced carrier collection efficiency in hierarchical nano-electrode for a high-performance photoelectrochemical cell

    Science.gov (United States)

    Hien, Truong Thi; Van Lam, Do; Kim, Chunjoong; Vuong, Nguyen Minh; Quang, Nguyen Duc; Kim, Dahye; Chinh, Nguyen Duc; Hieu, Nguyen Minh; Lee, Seung-Mo; Kim, Dojin

    2016-12-01

    The photoelectrochemical properties of CdS-sensitized ZnO nanorods grown on Pt-coated WO3 nanoplates are investigated to evaluate their effectiveness in hydrogen production. WO3 nanonanoplates are synthesized on glass substrates, followed by atomic layer deposition of Pt thin films as the terminal electrode to efficiently collect the photo-carriers generated from the ZnO/CdS absorption layers. Optimization of the fabrication process for the 3D hierarchical structure is performed, and the morphology and its effect on the photoelectrochemical performance of the electrodes are carefully studied using scanning electron microscopy, x-ray diffraction, and measurements of the photocurrent density and photo-conversion efficiencies. The enhanced PEC performance is elucidated by the 3D hierarchical geometry of the electrode. The optimized electrode shows a photocurrent density of ∼ 13 mA cm-2 and a conversion efficiency of ∼8.0% at -0.83 V (vs. SCE) in 0.5 M Na2S solution under the illumination of simulated solar light.

  12. Short minority carrier lifetimes in highly nitrogen-doped 4H-SiC epilayers for suppression of the stacking fault formation in PiN diodes

    Science.gov (United States)

    Tawara, T.; Miyazawa, T.; Ryo, M.; Miyazato, M.; Fujimoto, T.; Takenaka, K.; Matsunaga, S.; Miyajima, M.; Otsuki, A.; Yonezawa, Y.; Kato, T.; Okumura, H.; Kimoto, T.; Tsuchida, H.

    2016-09-01

    We investigated the dependency of minority carrier lifetimes on the nitrogen concentration, temperature, and the injected carrier concentration for highly nitrogen-doped 4H-SiC epilayers. The minority carrier lifetimes greatly shortened when the nitrogen concentration exceeded 1018 cm-3 through enhancing direct band-to-band and Auger recombination and showed a slight variation in the temperature range from room temperature (RT) to 250 °C. The epilayer with a nitrogen concentration of 9.3 × 1018 cm-3 exhibited a very short minority carrier lifetime of 38 ns at RT and 43 ns at 250 °C. The short minority carrier lifetimes of the highly nitrogen-doped epilayer were confirmed to maintain the values even after the subsequent annealing of 1700 °C. 4H-SiC PiN diodes were fabricated by depositing a highly nitrogen-doped epilayer as a "recombination enhancing layer" between an n- drift layer free from basal plane dislocations and the substrate. The PiN diodes showed no formation of stacking faults and no increase in forward voltage during current conduction of 600 A/cm2 (DC), demonstrating that a highly nitrogen-doped buffer layer with a short minority carrier lifetime successfully suppresses the "bipolar degradation" phenomenon.

  13. Factors related to high-level mobility in male servicemembers with traumatic lower-limb loss

    Directory of Open Access Journals (Sweden)

    Ignacio A. Gaunaurd, PhD, MSPT

    2013-10-01

    Full Text Available The purpose of this study was to examine the possible relationship between factors modifiable by rehabilitation interventions (rehabilitation factors, other factors related to lower-limb loss (other factors, and high-level mobility as measured by the Comprehensive High-Level Activity Mobility Predictor (CHAMP in servicemembers (SMs with traumatic lower-limb loss. One-hundred eighteen male SMs with either unilateral transtibial amputation (TTA, unilateral transfemoral amputation (TFA, or bilateral lower-limb amputation (BLLA participated. Stepwise regression analysis was used to develop separate regression models of factors predicting CHAMP score. Regression models containing both rehabilitation factors and other factors explained 81% (TTA, 36% (TFA, and 91% (BLLA of the variance in CHAMP score. Rehabilitation factors such as lower-limb strength and dynamic balance were found to be significantly related to CHAMP score and can be enhanced with the appropriate intervention. Further, the findings support the importance of salvaging the knee joint and its effect on high-level mobility capabilities. Lastly, the J-shaped energy storage and return feet were found to improve high-level mobility for SMs with TTA. These results could help guide rehabilitation and aid in developing appropriate interventions to assist in maximizing high-level mobility capabilities for SMs with traumatic lower-limb loss.

  14. Online Sensor Information and Redundancy Resolution Based Obstacle Avoidance for High DOF Mobile Manipulator Teleoperation

    Directory of Open Access Journals (Sweden)

    Huatao Zhang

    2013-05-01

    Full Text Available Abstract High degrees of freedom (DOF mobile manipulators provide more flexibility than conventional manipulators. They also provide manipulation operations with a mobility capacity and have potential in many applications. However, due to high redundancy, planning and control become more complicated and difficult, especially when obstacles occur. Most existing obstacle avoidance methods are based on off-line algorithms and most of them mainly focus on planning a new collision-free path, which is not appropriate for some applications, such as teleoperation and uses many system resources as well. Therefore, this paper presents an online planning and control method for obstacle avoidance in mobile manipulators using online sensor information and redundancy resolution. An obstacle contour reconstruction approach employing a mobile manipulator equipped with an active laser scanner system is also introduced in this paper. This method is implemented using a mobile manipulator with a seven-DOF manipulator and a four-wheel drive mobile base. The experimental results demonstrate the effectiveness of this method.

  15. N-Linked Glycans Are Assembled on Highly Reduced Dolichol Phosphate Carriers in the Hyperthermophilic Archaea Pyrococcus furiosus.

    Science.gov (United States)

    Chang, Michelle M; Imperiali, Barbara; Eichler, Jerry; Guan, Ziqiang

    2015-01-01

    In all three domains of life, N-glycosylation begins with the assembly of glycans on phosphorylated polyisoprenoid carriers. Like eukaryotes, archaea also utilize phosphorylated dolichol for this role, yet whereas the assembled oligosaccharide is transferred to target proteins from dolichol pyrophosphate in eukaryotes, archaeal N-linked glycans characterized to date are derived from a dolichol monophosphate carrier, apart from a single example. In this study, glycan-charged dolichol phosphate from the hyperthermophile Pyrococcus furiosus was identified and structurally characterized. Normal and reverse phase liquid chromatography-electrospray ionization mass spectrometry revealed the existence of dolichol phosphate charged with the heptasaccharide recently described in in vitro studies of N-glycosylation on this species. As with other described archaeal dolichol phosphates, the α- and ω-terminal isoprene subunits of the P. furiosus lipid are saturated, in contrast to eukaryal phosphodolichols that present only a saturated α-position isoprene subunit. Interestingly, an additional 1-4 of the 12-14 isoprene subunits comprising P. furiosus dolichol phosphate are saturated, making this lipid not only the longest archaeal dolichol phosphate described to date but also the most highly saturated.

  16. N-Linked Glycans Are Assembled on Highly Reduced Dolichol Phosphate Carriers in the Hyperthermophilic Archaea Pyrococcus furiosus.

    Directory of Open Access Journals (Sweden)

    Michelle M Chang

    Full Text Available In all three domains of life, N-glycosylation begins with the assembly of glycans on phosphorylated polyisoprenoid carriers. Like eukaryotes, archaea also utilize phosphorylated dolichol for this role, yet whereas the assembled oligosaccharide is transferred to target proteins from dolichol pyrophosphate in eukaryotes, archaeal N-linked glycans characterized to date are derived from a dolichol monophosphate carrier, apart from a single example. In this study, glycan-charged dolichol phosphate from the hyperthermophile Pyrococcus furiosus was identified and structurally characterized. Normal and reverse phase liquid chromatography-electrospray ionization mass spectrometry revealed the existence of dolichol phosphate charged with the heptasaccharide recently described in in vitro studies of N-glycosylation on this species. As with other described archaeal dolichol phosphates, the α- and ω-terminal isoprene subunits of the P. furiosus lipid are saturated, in contrast to eukaryal phosphodolichols that present only a saturated α-position isoprene subunit. Interestingly, an additional 1-4 of the 12-14 isoprene subunits comprising P. furiosus dolichol phosphate are saturated, making this lipid not only the longest archaeal dolichol phosphate described to date but also the most highly saturated.

  17. Cadmium (II) and lead (II) transport in a polymer inclusion membrane using tributyl phosphate as mobile carrier and CuFeO(2) as a polarized photo electrode.

    Science.gov (United States)

    Arous, Omar; Amara, Mourad; Trari, Mohamed; Bouguelia, Aissa; Kerdjoudj, Hacène

    2010-08-15

    In this work, a development of polymeric inclusion membranes for the cations separation is reported. The membrane was made up of cellulose triacetate (CTA) with a tributyl phosphate (TBP) incorporated into the polymer as metal ions carrier. The transport of lead (II) and cadmium (II) ions in two membrane systems polymer inclusion membrane (PIM), PIM coupled with photo-chemical electrode using TBP as carrier and 2-nitro phenyl octyl ether (NPOE) or tris ethylhexyl phosphate (TEHP) as plasticizer have been investigated. The membranes: polymer+plasticizer+carrier were synthesized and characterized by FTIR, X-ray diffraction and scanning electron microscopy (SEM). Transports of lead and cadmium have been studied using these systems and the results were compared to commercial cation exchange membrane (CRA). The obtained results showed that for Pb(2+) ion, the concentrations of the strip phase increases using synthesized membranes. The conduction band of the delafossite CuFeO(2) (-1.25 V(SCE)) yields a thermodynamically M(2+) (=Pb(2+), Cd(2+)) photo electrodeposition and speeds up the diffusion process. In all the cases, the potential of the electrode M/M(2+) in the feed compartment increases until a maximum value, reached at approximately 100 min above which it undergoes a diminution.

  18. Investigating the Mobility of Trilayer Graphene Nanoribbon in Nanoscale FETs

    Science.gov (United States)

    Rahmani, Meisam; Ghafoori Fard, Hassan; Ahmadi, Mohammad Taghi; Rahbarpour, Saeideh; Habibiyan, Hamidreza; Varmazyari, Vali; Rahmani, Komeil

    2017-10-01

    The aim of the present paper is to investigate the scaling behaviors of charge carrier mobility as one of the most remarkable characteristics for modeling of nanoscale field-effect transistors (FETs). Many research groups in academia and industry are contributing to the model development and experimental identification of multi-layer graphene FET-based devices. The approach in the present work is to provide an analytical model for carrier mobility of tri-layer graphene nanoribbon (TGN) FET. In order to do so, one starts by identifying the analytical modeling of TGN carrier velocity and ballistic conductance. At the end, a model of charge carrier mobility with numerical solution is analytically derived for TGN FET, in which the carrier concentration, temperature and channel length characteristics dependence are highlighted. Moreover, variation of band gap and gate voltage during the proposed device operation and its effect on carrier mobility is investigated. To evaluate the nanoscale FET performance, the carrier mobility model is also adopted to obtain the I-V characteristics of the device. In order to verify the accuracy of the proposed analytical model for TGN mobility, it is compared to the existing experimental data, and a satisfactory agreement is reported for analogous ambient conditions. Moreover, the proposed model is compared with the published data of single-layer graphene and bi-layer graphene, in which the obtained results demonstrate significant insights into the importance of charge carrier mobility impact in high-performance TGN FET. The work presented here is one step towards an applicable model for real-world nanoscale FETs.

  19. CsSnI3: Semiconductor or metal? High electrical conductivity and strong near-infrared photoluminescence from a single material. High hole mobility and phase-transitions.

    Science.gov (United States)

    Chung, In; Song, Jung-Hwan; Im, Jino; Androulakis, John; Malliakas, Christos D; Li, Hao; Freeman, Arthur J; Kenney, John T; Kanatzidis, Mercouri G

    2012-05-23

    CsSnI(3) is an unusual perovskite that undergoes complex displacive and reconstructive phase transitions and exhibits near-infrared emission at room temperature. Experimental and theoretical studies of CsSnI(3) have been limited by the lack of detailed crystal structure characterization and chemical instability. Here we describe the synthesis of pure polymorphic crystals, the preparation of large crack-/bubble-free ingots, the refined single-crystal structures, and temperature-dependent charge transport and optical properties of CsSnI(3), coupled with ab initio first-principles density functional theory (DFT) calculations. In situ temperature-dependent single-crystal and synchrotron powder X-ray diffraction studies reveal the origin of polymorphous phase transitions of CsSnI(3). The black orthorhombic form of CsSnI(3) demonstrates one of the largest volumetric thermal expansion coefficients for inorganic solids. Electrical conductivity, Hall effect, and thermopower measurements on it show p-type metallic behavior with low carrier density, despite the optical band gap of 1.3 eV. Hall effect measurements of the black orthorhombic perovskite phase of CsSnI(3) indicate that it is a p-type direct band gap semiconductor with carrier concentration at room temperature of ∼ 10(17) cm(-3) and a hole mobility of ∼585 cm(2) V(-1) s(-1). The hole mobility is one of the highest observed among p-type semiconductors with comparable band gaps. Its powders exhibit a strong room-temperature near-IR emission spectrum at 950 nm. Remarkably, the values of the electrical conductivity and photoluminescence intensity increase with heat treatment. The DFT calculations show that the screened-exchange local density approximation-derived band gap agrees well with the experimentally measured band gap. Calculations of the formation energy of defects strongly suggest that the electrical and light emission properties possibly result from Sn defects in the crystal structure, which arise

  20. Two-dimensional charge transport in self-organized, high-mobility conjugated polymers

    DEFF Research Database (Denmark)

    Sirringhaus, H.; Brown, P.J.; Friend, R.H.

    1999-01-01

    Self-organization in many solution-processed, semiconducting conjugated polymers results in complex microstructures, in which ordered microcrystalline domains are embedded in an amorphous matrix(I). This has important consequences for electrical properties of these materials: charge transport...... is usually limited by the most difficult hopping processes and is therefore dominated by the disordered matrix, resulting in low charge-carrier mobilities(2) (less than or equal to 10(-5) cm(2)V(-1)s(-1)). Here we use thin-film, field-effect transistor structures to probe the transport properties...... of the ordered microcrystalline domains in the conjugated polymer poly(3-hexylthiophene), P3HT, Self-organization in P3HT results in a lamella structure with two-dimensional conjugated sheets formed by interchain stacking. We find that, depending on processing conditions, the lamellae can adopt two different...

  1. Reliability of high mobility SiGe channel MOSFETs for future CMOS applications

    CERN Document Server

    Franco, Jacopo; Groeseneken, Guido

    2014-01-01

    Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability. This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated. The extensive experimental datasets collected on a variety of processed 300mm wafers and pr...

  2. An Investigation of the Relationship between High-School Students' Problematic Mobile Phone Use and Their Self-Esteem Levels

    Science.gov (United States)

    Isiklar, Abdullah; Sar, Ali Haydar; Durmuscelebi, Mustafa

    2013-01-01

    Excessive mobile phone use, especially among adolescents, brings too many debates about its effects. To this end, in this study, we try to investigate the relationship between adolescents' mobile phone use and their self-esteem levels with regard to their genders. For 919 high school students, we evaluated mobile phone use concerning their…

  3. An Investigation of the Relationship between High-School Students' Problematic Mobile Phone Use and Their Self-Esteem Levels

    Science.gov (United States)

    Isiklar, Abdullah; Sar, Ali Haydar; Durmuscelebi, Mustafa

    2013-01-01

    Excessive mobile phone use, especially among adolescents, brings too many debates about its effects. To this end, in this study, we try to investigate the relationship between adolescents' mobile phone use and their self-esteem levels with regard to their genders. For 919 high school students, we evaluated mobile phone use concerning their…

  4. High electron mobility ZnO film for high-performance inverted polymer solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lv, Peiwen; Chen, Shan-Ci; Zheng, Qingdong; Huang, Feng, E-mail: fhuang@fjirsm.ac.cn; Ding, Kai [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou Fujian, 350002 (China)

    2015-04-20

    High-quality ZnO films (ZnO-MS) are prepared via magnetron sputtering deposition with a high mobility of about 2 cm{sup 2}/(V·s) and are used as electron transport layer for inverted polymer solar cells (PSCs) with polymer poly[4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b:4,5-b′] dithiophene-co-3-fluorothieno[3,4-b]thiophene-2-carboxylate]:[6,6]-phenyl C71-butyric acid methyl ester as the active layer. A significant improvement of J{sub SC}, about 20% enhancement in contrast to the devices built on sol-gel derived ZnO film (ZnO-Sol), is found in the ZnO-MS based device. High performance ZnO-MS based PSCs exhibit power conversion efficiency (PCE) up to 8.55%, which is much better than the device based on ZnO-Sol (PCE = 7.78%). Further research on cathode materials is promising to achieve higher performance.

  5. Detuning effect study of High-Q Mobile Phone Antennas

    DEFF Research Database (Denmark)

    Bahramzy, Pevand; Pedersen, Gert F.

    2015-01-01

    Number of frequency bands that have to be covered by smart phones, are ever increasing. This broadband coverage can be obtained either by using a low-Q antenna or a high-Q tunable antenna. This study investigates high-Q antennas performance when placed in proximity of the user. This study...

  6. Analysis of paralytic shellfish toxins using high-field asymmetric waveform ion mobility spectrometry with liquid chromatography-mass spectrometry.

    Science.gov (United States)

    Beach, Daniel G; Melanson, Jeremy E; Purves, Randy W

    2015-03-01

    The analysis of paralytic shellfish toxins (PSTs) by liquid chromatography-mass spectrometry remains a challenge because of their high polarity, large number of analogues and the complex matrix in which they occur. Here we investigate the potential utility of high-field asymmetric waveform ion mobility spectrometry (FAIMS) as a gas-phase ion separation tool for analysis of PSTs by mass spectrometry. We investigate the separation of PSTs using FAIMS with two divergent goals: using FAIMS as a primary separation tool for rapid screening by electrospray ionization (ESI)-FAIMS-MS or combined with LC in a multidimensional LC-ESI-FAIMS-MS separation. First, a survey of the parameters that affect the sensitivity and selectivity of PST analysis by FAIMS was carried out using ESI-FAIMS-MS. In particular, the use of acetonitrile as a gas additive in the carrier gas flow offered good separation of all PST epimeric pairs. A second set of FAIMS conditions was also identified, which focussed PSTs to a relatively narrow CV range allowing development of an LC-ESI-FAIMS-MS method for analysis of PST toxins in complex mussel tissue extracts. The quantitative capabilities of this method were evaluated by analysing a PST containing mussel tissue matrix material. Results compared favourably with analysis by an established LC-post-column oxidation-fluorescence method with recoveries ranging from 70 to 106%, although sensitivity was somewhat reduced. The current work represents the first successful separation of PST isomers using ion mobility and shows the promise of FAIMS as a tool for analysis of algal biotoxins in complex samples and outlines some critical requirements for its future improvement.

  7. From computational discovery to experimental characterization of a high hole mobility organic crystal.

    KAUST Repository

    Sokolov, Anatoliy N

    2011-08-16

    For organic semiconductors to find ubiquitous electronics applications, the development of new materials with high mobility and air stability is critical. Despite the versatility of carbon, exploratory chemical synthesis in the vast chemical space can be hindered by synthetic and characterization difficulties. Here we show that in silico screening of novel derivatives of the dinaphtho[2,3-b:2\\',3\\'-f]thieno[3,2-b]thiophene semiconductor with high hole mobility and air stability can lead to the discovery of a new high-performance semiconductor. On the basis of estimates from the Marcus theory of charge transfer rates, we identified a novel compound expected to demonstrate a theoretic twofold improvement in mobility over the parent molecule. Synthetic and electrical characterization of the compound is reported with single-crystal field-effect transistors, showing a remarkable saturation and linear mobility of 12.3 and 16 cm(2) V(-1) s(-1), respectively. This is one of the very few organic semiconductors with mobility greater than 10 cm(2) V(-1) s(-1) reported to date.

  8. High charge carrier density at the NaTaO3/SrTiO3 hetero-interface

    KAUST Repository

    Nazir, Safdar

    2011-08-05

    The formation of a (quasi) two-dimensional electron gas between the band insulators NaTaO3 and SrTiO3 is studied by means of the full-potential linearized augmented plane-wave method of density functional theory. Optimization of the atomic positions points to only small changes in the chemical bonding at the interface. Both the p-type (NaO)−/(TiO2)0 and n-type (TaO2)+/(SrO)0 interfaces are found to be metallic with high charge carrier densities. The effects of O vacancies are discussed. Spin-polarized calculations point to the formation of isolated O 2pmagnetic moments, located in the metallic region of the p-type interface.

  9. Simultaneous drop in mean free path and carrier density at the pseudogap onset in high-{T}_{{\\rm{c}}} cuprates

    Science.gov (United States)

    Storey, J. G.

    2017-10-01

    High-temperature superconducting cuprates are distinguished by an enigmatic pseudogap which opens near optimal doping where the superconducting transition temperature is highest. Key questions concern its origin and whether it is essential in any way to superconductivity. Recent field-induced normal-state transport experiments on hole-doped cuprates have measured abrupt changes in the doping-dependent Hall number and resistivity, consistent with a drop in carrier density from 1+p to p holes per copper atom, on entering the pseudogap phase. In this work the change in resistivity is analyzed in terms of an antiferromagnetic-order-induced Fermi surface reconstruction model that has already successfully described the Hall number. In order for this model to describe the resistivity we find that the zero-temperature mean free path must also drop abruptly in proportion to the size of the Fermi surface. This suggests that intrapocket scattering underlies the observed upturn in resistivity in the pseudogap state.

  10. Study on No- carrier-added Separation of 126Sn From High-level Liquid Waste

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    126Sn is a long-lived fission product nuclide, its fission yield values, in fission of 235U by thermalneutron, fission spectrum neutron and high energy neutron, are 5.59×10-2%, 1.39×10-1% and 1.76%,respectively. So scientists are paying more attention to 126Sn in high radioactive waste disposal.

  11. Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

    Science.gov (United States)

    Tapajna, M.; Hilt, O.; Bahat-Treidel, E.; Würfl, J.; Kuzmík, J.

    2015-11-01

    Gate diode conduction mechanisms were analyzed in normally-off p-GaN/AlGaN/GaN high-electron mobility transistors grown on Si wafers before and after forward bias stresses. Electrical characterization of the gate diodes indicates forward current to be limited by channel electrons injected through the AlGaN/p-GaN triangular barrier promoted by traps. On the other hand, reverse current was found to be consistent with carrier generation-recombination processes in the AlGaN layer. Soft breakdown observed after ˜105 s during forward bias stress at gate voltage of 7 V was attributed to formation of conductive channel in p-GaN/AlGaN gate stack via trap generation and percolation mechanism, likely due to coexistence of high electric field and high forward current density. Possible enhancement of localized conductive channels originating from spatial inhomogeneities is proposed to be responsible for the degradation.

  12. Diketopyrrolopyrrole-diketopyrrolopyrrole-based conjugated copolymer for high-mobility organic field-effect transistors

    KAUST Repository

    Kanimozhi, Catherine K.

    2012-10-10

    In this communication, we report the synthesis of a novel diketopyrrolopyrrole-diketopyrrolopyrrole (DPP-DPP)-based conjugated copolymer and its application in high-mobility organic field-effect transistors. Copolymerization of DPP with DPP yields a copolymer with exceptional properties such as extended absorption characteristics (up to ∼1100 nm) and field-effect electron mobility values of >1 cm 2 V -1 s -1. The synthesis of this novel DPP-DPP copolymer in combination with the demonstration of transistors with extremely high electron mobility makes this work an important step toward a new family of DPP-DPP copolymers for application in the general area of organic optoelectronics. © 2012 American Chemical Society.

  13. Mobilities Mobilities

    Directory of Open Access Journals (Sweden)

    César Pompeyo

    2011-12-01

    Full Text Available Urry, John (2007 Mobilities.Oxford: Polity Press.Urry, John (2007 Mobilities.Oxford: Polity Press.John Urry (1946-, profesor en la Universidad de Lancaster, es un sociólogo de sobra conocido y altamente reputado en el panorama internacional de las ciencias sociales. Su dilatada carrera, aparentemente dispersa y diversificada, ha seguido senderos bastante bien definidos dejando tras de sí un catálogo extenso de obras sociológicas de primer nivel. Sus primeros trabajos se centraban en el campo de la teoría social y la filosofía de las ciencias sociales o de la sociología del poder [...

  14. An Efficient Inter Carrier Interference Cancellation Schemes for OFDM Systems

    Directory of Open Access Journals (Sweden)

    B. Sathish Kumar

    2009-12-01

    Full Text Available Orthogonal Frequency Division Multiplexing (OFDM has recently been used widely in wireless communication systems. OFDM is very effective in combating inter-symbol interference and can achieve high data rate in frequency selective channel. For OFDM communication systems, the frequency offsets in mobile radio channels distort the orthogonality between subcarriers resulting in Inter Carrier Interference (ICI. ICI causes power leakage among subcarriers thus degrading the system performance. A well-known problem of OFDM is its sensitivity to frequency offset between the transmitted and received carrier frequencies. There are two deleterious effects caused by frequency offset one is the reduction of signal amplitude in the output of the filters matched to each of the carriers and the second is introduction of ICI from the other carriers. This research work investigates three effective methods for combating the effects of ICI: ICI Self Cancellation (SC, Maximum Likelihood (ML estimation, and Extended Kalman Filter (EKF method. These three methods are compared in terms of bit error rate performance and bandwidth efficiency. Through simulations, it is shown that the three techniques are effective in mitigating the modulation schemes, the ML and EKF methods perform better than the SC method.Keywords- Orthogonal frequency Division Multiplexing (OFDM; Inter Carrier Interference(ICI; Carrier to Interference Power Ratio (CIR;Self Cancellation(SC;Carrier Frequency Offset (CFO; Maximum Likelihood(ML; Extended Kalman Filtering(EKF.

  15. Enhanced vertical carrier mobility in poly(3-alkylthiophene) thin films sandwiched between self-assembled monolayers and surface-segregated layers.

    Science.gov (United States)

    Ma, Jusha; Hashimoto, Kazuhito; Koganezawa, Tomoyuki; Tajima, Keisuke

    2014-04-07

    End-functionalized poly(3-butylthiophene) with a thiol group (P3BT-S) was synthesized and used to form a self-assembled monolayer (SAM). It can induce the end-on orientation in the thin film which has the potential to further enhance hole mobility up to 1.1 × 10(-2) cm(2) V(-1) s(-1) in the vertical direction.

  16. High-skilled labour mobility in Europe before and after the 2004 enlargement.

    Science.gov (United States)

    Petersen, Alexander M; Puliga, Michelangelo

    2017-03-01

    The extent to which international high-skilled mobility channels are forming is a question of great importance in an increasingly global knowledge-based economy. One factor facilitating the growth of high-skilled labour markets is the standardization of certifiable degrees meriting international recognition. Within this context, we analysed an extensive high-skilled mobility database comprising roughly 382 000 individuals from five broad profession groups (Medical, Education, Technical, Science & Engineering and Business & Legal) over the period 1997-2014, using the 13-country expansion of the European Union (EU) to provide insight into labour market integration. We compare the periods before and after the 2004 enlargement, showing the emergence of a new east-west migration channel between the 13 mostly eastern EU entrants (E) and the rest of the western European countries (W). Indeed, we observe a net directional loss of human capital from E → W, representing 29% of the total mobility after 2004. Nevertheless, the counter-migration from W → E is 7% of the total mobility over the same period, signalling the emergence of brain circulation within the EU. Our analysis of the country-country mobility networks and the country-profession bipartite networks provides timely quantitative evidence for the convergent integration of the EU, and highlights the central role of the UK and Germany as high-skilled labour hubs. We conclude with two data-driven models to explore the structural dynamics of the mobility networks. First, we develop a reconfiguration model to explore the potential ramifications of Brexit and the degree to which redirection of high-skilled labourers away from the UK may impact the integration of the rest of the European mobility network. Second, we use a panel regression model to explain empirical high-skilled mobility rates in terms of various economic 'push-pull' factors, the results of which show that government expenditure on education, per capita

  17. Nonlinear Channel Estimation for OFDM System by Complex LS-SVM under High Mobility Conditions

    CERN Document Server

    Charrada, Anis; 10.5121/ijwmn.2011.3412

    2011-01-01

    A nonlinear channel estimator using complex Least Square Support Vector Machines (LS-SVM) is proposed for pilot-aided OFDM system and applied to Long Term Evolution (LTE) downlink under high mobility conditions. The estimation algorithm makes use of the reference signals to estimate the total frequency response of the highly selective multipath channel in the presence of non-Gaussian impulse noise interfering with pilot signals. Thus, the algorithm maps trained data into a high dimensional feature space and uses the structural risk minimization (SRM) principle to carry out the regression estimation for the frequency response function of the highly selective channel. The simulations show the effectiveness of the proposed method which has good performance and high precision to track the variations of the fading channels compared to the conventional LS method and it is robust at high speed mobility.

  18. High heritability is compatible with the broad distribution of set point viral load in HIV carriers.

    Directory of Open Access Journals (Sweden)

    Sebastian Bonhoeffer

    2015-02-01

    Full Text Available Set point viral load in HIV patients ranges over several orders of magnitude and is a key determinant of disease progression in HIV. A number of recent studies have reported high heritability of set point viral load implying that viral genetic factors contribute substantially to the overall variation in viral load. The high heritability is surprising given the diversity of host factors associated with controlling viral infection. Here we develop an analytical model that describes the temporal changes of the distribution of set point viral load as a function of heritability. This model shows that high heritability is the most parsimonious explanation for the observed variance of set point viral load. Our results thus not only reinforce the credibility of previous estimates of heritability but also shed new light onto mechanisms of viral pathogenesis.

  19. Atmospheric Temperature Profile Measurements Using Mobile High Spectral Resolution Lidar

    Science.gov (United States)

    Razenkov, Ilya I.; Eloranta, Edwin W.

    2016-06-01

    The High Spectral Resolution Lidar (HSRL) designed at the University of Wisconsin-Madison discriminates between Mie and Rayleigh backscattering [1]. It exploits the Doppler effect caused by thermal motion of molecules, which broadens the spectrum of the transmitted laser light. That allows for absolute calibration of the lidar and measurements of the aerosol volume backscatter coefficient. Two iodine absorption filters with different absorption line widths (a regular iodine vapor filter and Argon buffered iodine filter) allow for atmospheric temperature profile measurements. The sensitivity of the measured signal-to-air temperature ratio is around 0.14%/K. The instrument uses a shared telescope transmitter-receiver design and operates in eyesafe mode (the product of laser average power and telescope aperture equals 0.1 Wm2 at 532 nm).

  20. Atmospheric Temperature Profile Measurements Using Mobile High Spectral Resolution Lidar

    Directory of Open Access Journals (Sweden)

    Razenkov Ilya I.

    2016-01-01

    Full Text Available The High Spectral Resolution Lidar (HSRL designed at the University of Wisconsin-Madison discriminates between Mie and Rayleigh backscattering [1]. It exploits the Doppler effect caused by thermal motion of molecules, which broadens the spectrum of the transmitted laser light. That allows for absolute calibration of the lidar and measurements of the aerosol volume backscatter coefficient. Two iodine absorption filters with different absorption line widths (a regular iodine vapor filter and Argon buffered iodine filter allow for atmospheric temperature profile measurements. The sensitivity of the measured signal-to-air temperature ratio is around 0.14%/K. The instrument uses a shared telescope transmitter-receiver design and operates in eyesafe mode (the product of laser average power and telescope aperture equals 0.1 Wm2 at 532 nm.

  1. Carrier synchronization for STBC OFDM systems

    Institute of Scientific and Technical Information of China (English)

    Cai Jueping; Song Wentao; Li Zan; Ge Jianhua

    2005-01-01

    All-digital carrier synchronization strategies and algorithms for space-time block coding (STBC) orthogonal frequency division multiplexing (OFDM) are proposed in this paper. In our scheme, the continuous pilots (CP) are saved, and the complexity of carrier synchronization is reduced significantly by dividing the process into three steps. The coarse carrier synchronization and the fine carrier synchronization algorithms are investigated and analyzed in detail. Simulations show that the carrier can be locked into tracking mode quickly, and the residual frequency error satisfies the system requirement in both stationary and mobile environments.

  2. Plerixafor as preemptive strategy results in high success rates in autologous stem cell mobilization failure.

    Science.gov (United States)

    Worel, Nina; Fritsch, Gerhard; Agis, Hermine; Böhm, Alexandra; Engelich, Georg; Leitner, Gerda C; Geissler, Klaus; Gleixner, Karoline; Kalhs, Peter; Buxhofer-Ausch, Veronika; Keil, Felix; Kopetzky, Gerhard; Mayr, Viktor; Rabitsch, Werner; Reisner, Regina; Rosskopf, Konrad; Ruckser, Reinhard; Zoghlami, Claudia; Zojer, Niklas; Greinix, Hildegard T

    2016-08-31

    Plerixafor in combination with granulocyte-colony stimulating factor (G-CSF) is approved for autologous stem cell mobilization in poor mobilizing patients with multiple myeloma or malignant lymphoma. The purpose of this study was to evaluate efficacy and safety of plerixafor in an immediate rescue approach, administrated subsequently to G-CSF alone or chemotherapy and G-CSF in patients at risk for mobilization failure. Eighty-five patients mobilized with G-CSF alone or chemotherapy were included. Primary endpoint was the efficacy of the immediate rescue approach of plerixafor to achieve ≥2.0 × 10(6) CD34(+) cells/kg for a single or ≥5 × 10(6) CD34(+) cells/kg for a double transplantation and potential differences between G-CSF and chemotherapy-based mobilization. Secondary objectives included comparison of stem cell graft composition including CD34(+) cell and lymphocyte subsets with regard to the mobilization regimen applied. No significant adverse events were recorded. A median 3.9-fold increase in CD34(+) cells following plerixafor was observed, resulting in 97% patients achieving at least ≥2 × 10(6) CD34+ cells/kg. Significantly more differentiated granulocyte and monocyte forming myeloid progenitors were collected after chemomobilization whereas more CD19(+) and natural killer cells were collected after G-CSF. Fifty-two patients underwent transplantation showing rapid and durable engraftment, irrespectively of the stem cell mobilization regimen used. The addition of plerixafor in an immediate rescue model is efficient and safe after both, G-CSF and chemomobilization and results in extremely high success rates. Whether the differences in graft composition have a clinical impact on engraftment kinetics, immunologic recovery, and graft durability have to be analysed in larger prospective studies.

  3. Analysis of Accuracy of a High-speed Mobile Platform Control System

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The efficient manufacture technique involves a high-speed control of platform mobile system. A linear acutor is presented in this paper. The linear acutor is constructed as a linear stepper motor. However, to sustain both high accuracy and high speed for the position and speed control, A single-stack computer system is constructed and a special control algorithm is prescribed to controled the linear actuator continuously. In this paper, the nonlinear errors resulted from the magnetic saturation and the h...

  4. Thick Homoepitaxial GaN with Low Carrier Concentration for High Blocking Voltage

    Science.gov (United States)

    2010-01-01

    demonstrated that GaN Schottky diodes fabricated on freestanding GaN substrates with simple metal overlap edge termination show reverse recovery time...Prior to ramping up to the growth temperature for MOCVD deposition of GaN, the flows of palladium -diffused high purity hydrogen and ammonia were

  5. Development of high quality carrier materials for field delivery of key microorganisms used as bio-fertilisers and bio-pesticides

    Energy Technology Data Exchange (ETDEWEB)

    Yardin, M. Roseline E-mail: m.yardin@uws.edu.au; Kennedy, Ivan R.; Thies, Janice E

    2000-03-01

    High quality inoculants used as bio-fertilisers and bio-pesticides depend on having high concentrations of the microorganism(s), long shelf-life and a formulation appropriate for field delivery. To maintain the microorganisms in a viable state, commercially available carrier materials are typically based on milled peat, clays, rice, bran, seeds, or other complex organic matrices. To manufacture a high quality microbial product, it is essential that the carrier material is pre-packaged and pre-sterilised. This allows for non-competitive multiplication and maintenance of the microorganisms in a nutrient rich environment. This paper reports on the efficacy and problems inherent in the sterilisation of complex carbon-based carrier materials such as peat. Resident microbial survivors of gamma irradiation doses in excess of 50 kGy, commonly Gram positive spore-formers such as Bacillus or actinomycetes were consistently observed. (author)

  6. Isotope separation using high-field asymmetric waveform ion mobility spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Barnett, David A.; Purves, Randy W.; Guevremont, Roger E-mail: roger.guevremont@nrc.ca

    2000-08-01

    A new apparatus for gas-phase separation of stable elemental isotopes at atmospheric pressure is described. A gaseous mixture of chloride isotopes was generated using electrospray ionization and introduced into the analyzer region of a high-field asymmetric waveform ion mobility spectrometer (FAIMS). The ion current exiting the FAIMS was sampled into a quadrupole mass spectrometer for isotope identification.

  7. Early Reading Skills and Academic Achievement Trajectories of Students Facing Poverty, Homelessness, and High Residential Mobility

    Science.gov (United States)

    Herbers, Janette E.; Cutuli, J. J.; Supkoff, Laura M.; Heistad, David; Chan, Chi-Keung; Hinz, Elizabeth; Masten, Ann S.

    2012-01-01

    This investigation tested the importance of early academic achievement for later achievement trajectories among 18,011 students grouped by level of socioeconomic risk. Students considered to be at highest risk were those who experienced homelessness or high residential mobility (HHM). HHM students were compared with students eligible for free…

  8. Considering the Geographic Dispersion of Homeless and Highly Mobile Students and Families

    Science.gov (United States)

    Miller, Peter M.; Bourgeois, Alexis K.

    2013-01-01

    This article addresses school and community-level issues associated with the expanding crisis of student homelessness in the United States. We note that while an increased geographic dispersion of homeless and highly mobile (HHM) families is largely attributed to the widespread effects of the economic recession, it is also furthered by shifting…

  9. CityMobil : Human factor issues regarding highly automated vehicles on eLane

    NARCIS (Netherlands)

    Toffetti, A.; Wilschut, E.S.; Martens, M.H.; Schieben, A.; Rambaldini, A.; Merat, N.; Flemisch, F.

    2009-01-01

    There are several human factor concerns with highly autonomous or semiautonomous driving, such as transition of control, loss of skill, and dealing with automated system errors. Four CityMobil experiments studied the eLane concept for dual-mode cars, and the results of one are described. The open

  10. Integrating mHealth Mobile Applications to Reduce High Risk Drinking among Underage Students

    Science.gov (United States)

    Kazemi, Donna M.; Cochran, Allyson R.; Kelly, John F.; Cornelius, Judith B.; Belk, Catherine

    2014-01-01

    Objective: College students embrace mobile cell phones (MCPs) as a primary communication and entertainment device. The aim of this study was to investigate college students' perceptions toward using mHealth technology to deliver interventions to prevent high-risk drinking and associated consequences. Design/setting: Four focus group interviews…

  11. Integrating mHealth Mobile Applications to Reduce High Risk Drinking among Underage Students

    Science.gov (United States)

    Kazemi, Donna M.; Cochran, Allyson R.; Kelly, John F.; Cornelius, Judith B.; Belk, Catherine

    2014-01-01

    Objective: College students embrace mobile cell phones (MCPs) as a primary communication and entertainment device. The aim of this study was to investigate college students' perceptions toward using mHealth technology to deliver interventions to prevent high-risk drinking and associated consequences. Design/setting: Four focus group interviews…

  12. Analysing the Behaviour and Performance of Opportunistic Routing Protocols in Highly Mobile Wireless Ad Hoc Networks

    Directory of Open Access Journals (Sweden)

    Varun G Menon

    2016-10-01

    Full Text Available Recent advances in wireless networks have enabled us to deploy and use mobile ad hoc networks for communication between the rescue officers in disaster recovery and reconstruction operations. This highly dynamic network does not require any infrastructure or centralized control. As the topology of the network remain dynamic, severe performance limitations incur with traditional routing strategies. Recently a new routing paradigm known as opportunistic routing protocols have been proposed to overcome these limitations and to provide efficient delivery of data in these highly dynamic ad hoc networks. Using the broadcasting nature of the wireless medium, this latest routing technique tries to address two major issues of varying link quality and unpredictable node mobility in ad hoc networks. Unlike conventional IP forwarding, where an intermediate node looks up a forwarding table for a suitable next hop, opportunistic routing brings in opportunistic data forwarding that allows multiple candidate nodes in the forwarding area to act on the broadcasted data packet. This increases the reliability of data delivery in the network with reduced delay. One of the most important issues that have not been studied so far is the varying performance of opportunistic routing protocols in wireless networks with highly mobile nodes. This research paper analyses and compares the various advantages, disadvantages and the performance of the latest opportunistic routing protocols in wireless ad hoc networks with highly mobile nodes.

  13. High mobility group A1 enhances tumorigenicity of human cholangiocarcinoma and confers resistance to therapy

    DEFF Research Database (Denmark)

    Quintavalle, Cristina; Burmeister, Katharina; Piscuoglio, Salvatore

    2017-01-01

    High mobility group A1 (HMGA1) protein has been described to play an important role in numerous types of human carcinoma. By the modulation of several target genes HMGA1 promotes proliferation and epithelial-mesenchymal transition of tumor cells. However, its role in cholangiocarcinoma (CCA) has ...

  14. CityMobil : Human factor issues regarding highly automated vehicles on eLane

    NARCIS (Netherlands)

    Toffetti, A.; Wilschut, E.S.; Martens, M.H.; Schieben, A.; Rambaldini, A.; Merat, N.; Flemisch, F.

    2009-01-01

    There are several human factor concerns with highly autonomous or semiautonomous driving, such as transition of control, loss of skill, and dealing with automated system errors. Four CityMobil experiments studied the eLane concept for dual-mode cars, and the results of one are described. The open eL

  15. A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride

    NARCIS (Netherlands)

    Zomer, P. J.; Dash, S. P.; Tombros, N.; van Wees, B. J.

    2011-01-01

    We present electronic transport measurements of single and bilayer graphene on commercially available hexagonal boron nitride. We extract mobilities as high as 125 000 cm(2) V-1 s(-1) at room temperature and 275 000 cm(2) V-1 s(-1) at 4.2 K. The excellent quality is supported by the early developmen

  16. Development of Cryogenic Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor Amplifier

    Science.gov (United States)

    Hirata, T.; Okazaki, T.; Obara, K.; Yano, H.; Ishikawa, O.

    2017-06-01

    This paper reports the technical details of the development of a low-temperature amplifier for nuclear magnetic resonance measurements of superfluid {}^3He in very confined geometries. The amplifier consists of commercially available enhancement-mode pseudomorphic high-electron-mobility transistor devices and temperature-insensitive passive components with an operating frequency range of 0.2-6 MHz.

  17. Provision of High-Quality Orientation and Mobility Services to Older Persons with Visual Impairments.

    Science.gov (United States)

    Hill, M.-M.

    1991-01-01

    The provision of high quality orientation and mobility (O&M) services to older persons with visual impairments requires consideration of problems in attitudes, client characteristics, financial resources, inservice training, and the availability of age-appropriate assessment instruments. This paper discusses research on O&M interventions and…

  18. Aspects of High-Q Tunable Antennas and Their Deployment for 4G Mobile Communications

    DEFF Research Database (Denmark)

    Bahramzy, Pevand; Jagielski, Ole; Svendsen, Simon;

    2016-01-01

    Tunable antennas are very promising for future generations of mobile communications, where broad frequency coverage will be required increasingly. This work describes the design of small high-Quality factor (Q) tunable antennas based on Micro-Electro-Mechanical Systems (MEMS), which are capable...

  19. CityMobil : Human factor issues regarding highly automated vehicles on eLane

    NARCIS (Netherlands)

    Toffetti, A.; Wilschut, E.S.; Martens, M.H.; Schieben, A.; Rambaldini, A.; Merat, N.; Flemisch, F.

    2009-01-01

    There are several human factor concerns with highly autonomous or semiautonomous driving, such as transition of control, loss of skill, and dealing with automated system errors. Four CityMobil experiments studied the eLane concept for dual-mode cars, and the results of one are described. The open eL

  20. Mobility Performance in Slow- and High-Speed LTE Real Scenarios

    DEFF Research Database (Denmark)

    Gimenez, Lucas Chavarria; Cascino, Maria Carmela; Stefan, Maria;

    2016-01-01

    Mobility performance and handover data interruption times in real scenarios are studied by means of field measurements in an operational LTE network. Both slow- and high-speed scenarios are analyzed by collecting results from two different areas: Aalborg downtown and the highway which encircles...... in the city center as cells on the same site often cover different non-crossing street canyons. Moreover, no handover failures are experienced in the measurements which confirms robust LTE mobility performance. The average interruption time, which is at least equal to the handover execution time, lays within...

  1. High-field mobility in an assembly of conjugated polymer segments

    Science.gov (United States)

    Bussac, M. N.; Zuppiroli, L.

    1996-08-01

    We present a calculation of the hopping rate between the finite chains of a conjugated polymer. It is based on the optimization of the semiclassical hopping rates with respect to the possible widths and possible positions of the large polaron during the jump. For sufficient long chains and high enough fields, we arrive at an expression for the mobility which resembles a Fowler-Nordheim dependence with the field F, namely, exp-(F0/F). In this regime the mobility is weakly temperature dependent.

  2. Endometrium is not the primary site of origin of pelvic high-grade serous carcinoma in BRCA1 or BRCA2 mutation carriers

    NARCIS (Netherlands)

    Reitsma, Welmoed; Mourits, Marian J. E.; de Bock, Geertruida H.; Hollema, Harry

    2013-01-01

    Serous endometrial intraepithelial carcinoma has been proposed to be a potential precursor lesion of pelvic high-grade serous carcinoma. If true, an increased incidence of uterine papillary serous carcinomas would be expected in BRCA1 and BRCA2 mutation carriers, who are at high-risk of developing p

  3. High-speed carrier-depletion silicon Mach-Zehnder optical modulators with lateral PN junctions

    Directory of Open Access Journals (Sweden)

    Graham Trevor Reed

    2014-12-01

    Full Text Available This paper presents new experimental data from a lateral PN junction silicon Mach-Zehnder optical modulator. Efficiencies in the 1.4V.cm to 1.9V.cm range are demonstrated for drive voltages between 0V and 6V. High speed operation up to 52Gbit/s is also presented. The performance of the device which has its PN junction positioned in the centre of the waveguide is then compared to previously reported data from a lateral PN junction device with the junction self-aligned to the edge of the waveguide rib. An improvement in modulation efficiency is demonstrated when the junction is positioned in the centre of the waveguide. Finally we propose schemes for achieving high modulation efficiency whilst retaining self-aligned formation of the PN junction.

  4. High-density lipoprotein as a potential carrier for delivery of a lipophilic antitumoral drug into hepatoma cells

    Institute of Scientific and Technical Information of China (English)

    Bin Lou; Xue-Ling Liao; Man-Ping Wu; Pei-Fang Cheng; Chun-Yan Yin; Zheng Fei

    2005-01-01

    AIM: To investigate the possibility of recombinant highdensity lipoprotein (rHDL) being a carrier for delivering antitumoral drug to hepatoma cells.METHODS: Recombinant complex of HDL and aclacinomycin(rHDL-ACM) was prepared by cosonication of apoproteins from HDL (Apo HDL) and ACM as well as phosphatidylcholine.Characteristics of the rHDL-ACM were elucidated by electrophoretic mobility, including the size of particles,morphology and entrapment efficiency. Binding activity of rHDL-ACM to human hepatoma cells was determined by competition assay in the presence of excess native HDL. The cytotoxicity of rHDL-ACM was assessed by MTT method.RESULTS: The density range of rHDL-ACM was 1.063-1.210g/mL, and the same as that of native HDL. The purity of all rHDL-ACM preparations was more than 92%.Encapsulated efficiencies of rHDL-ACM were more than90%. rHDL-ACM particles were typical sphere model of lipoproteins and heterogeneous in particle size. The average diameter was 31.26±5.62 nm by measure of 110rHDL-ACM particles in the range of diameter of lipoproteins.rHDL-ACM could bind on SMMC-7721 cells, and such binding could be competed against in the presence of excess native HDL. rHDL-ACM had same binding capacity as native HDL. The cellular uptake of rHDL-ACM by SMMC-7721 hepatoma cells was significantly higher than that of free ACM at the concentration range of 0.5-10 μg/mL(P<0.01). Cytotoxicity of rHDL-ACM to SMMC-7721 cells was significantly higher than that of free ACM at concentration range of less than 5 μg/mL (P<0.01) and IC50 of rHDL-ACM was lower than IC50 of free ACM(1.68 nmol/L vs3 nmol/L). Compared to L02 hepatocytes,a normal liver cell line, the cellular uptake of rHDL-ACM by SMMC-7721 cells was significantly higher (P<0.01) and in a dose-dependent manner at the concentration range of 0.5-10 μg/mL. Cytotoxicity of the rHDL-ACM to SMMC-7721 cells was significantly higher than that to L02 cells at concentration range of 1-7.5 μg/mL (P<0.01). IC50 for

  5. Breast cancer size estimation with MRI in BRCA mutation carriers and other high risk patients

    Energy Technology Data Exchange (ETDEWEB)

    Mann, R.M., E-mail: r.mann@rad.umcn.nl [Radboud University Nijmegen Medical Centre, Department of Radiology, Nijmegen (Netherlands); Bult, P., E-mail: p.bult@path.umcn.nl [Radboud University Nijmegen Medical Centre, Department of Pathology, Nijmegen (Netherlands); Laarhoven, H.W.M. van, E-mail: h.vanlaarhoven@amc.uva.nl [Academic Medical Centre, University of Amsterdam, Department of Medical Oncology, Amsterdam (Netherlands); Radboud University Nijmegen Medical Centre, Department of Medical Oncology, Nijmegen (Netherlands); Span, P.N., E-mail: p.span@rther.umcn.nl [Radboud University Nijmegen Medical Centre, Department of Radiation Oncology, Nijmegen (Netherlands); Schlooz, M., E-mail: m.schlooz@chir.umcn.nl [Radboud University Nijmegen Medical Centre, Department of Surgery, Nijmegen (Netherlands); Veltman, J., E-mail: j.veltman@zgt.nl [Hospital group Twente (ZGT), Department of Radiology, Almelo (Netherlands); Hoogerbrugge, N., E-mail: n.hoogerbrugge@gen.umcn.nl [Radboud University Nijmegen Medical Centre, Department of Human Genetics, Nijmegen (Netherlands)

    2013-09-15

    Objective: To assess the value of breast MRI in size assessment of breast cancers in high risk patients, including those with a BRCA 1 or 2 mutation. Guidelines recommend invariably breast MRI screening for these patients and therapy is thus based on these findings. However, the accuracy of breast MRI for staging purposes is only tested in sporadic cancers. Methods: We assessed concordance of radiologic staging using MRI with histopathology in 49 tumors in 46 high risk patients (23 BRCA1, 12 BRCA2 and 11 Non-BRCA patients). The size of the total tumor area (TTA) was compared to pathology. In invasive carcinomas (n = 45) the size of the largest focus (LF) was also addressed. Results: Correlation of MRI measurements with pathology was 0.862 for TTA and 0.793 for LF. TTA was underestimated in 8(16%), overestimated in 5(10%), and correctly measured in 36(73%) cases. LF was underestimated in 4(9%), overestimated in 5(11%), and correctly measured in 36(80%) cases. Impact of BRCA 1 or 2 mutations on the quality of size estimation was not observed. Conclusions: Tumor size estimation using breast MRI in high risk patients is comparable to its performance in sporadic cancers. Therefore, breast MRI can safely be used for treatment planning.

  6. High mobility two-dimensional hole gases in GaAs/AlGaAs heterostructures; Hochbewegliche zweidimensionale Lochsysteme in GaAs/AlGaAs Heterostrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Gerl, Christian

    2009-10-14

    This thesis outlines the fabrication of high mobility two-dimensional hole-gases (2DHG) in GaAs/AlGaAs heterostructures with molecular beam epitaxy (MBE) and their characterization with magnetotransport measurements at low temperatures between 4 K and 30 mK. Here the optimization of the carrier mobility is focused. This will be achieved by introducing a novel carbon-filament doping source, with which contaminations of the MBE system and therefore in the grown layers can be reduced and by vary the band structure design to minimize scattering processes. With the help of these actions, hole mobilities above 1 E6 cm{sup 2}/Vs are achievable, what reflects an increase of factor 3 in the (001)- and factor 6.5 in the (110)- oriented transport plane compared to common 2DHGs. Furthermore states of the fractional Quantum Hall Effect can be observed in these 2DHGs, only visible in n-doped 2D systems so fare. Magnetotransport measurements on 2DHGs with aluminum gates reveal a hysteretic behavior of the carrier density with respect to the gate potential which can be attributed to the incorporation mechanisms of carbon atoms as acceptor. Temperature dependent magnetotransport measurements allow the evaluation of effective mass and quantum scattering time as well as the dependence of these parameters from the band structure design. In these experiments an aperiodic behavior of the Shubnikov-de Haas oscillations can be observed in the inverse magnetic field, which is attributed to the position of the fermi energy in the immediate vicinity of crossing regions of the complex Landau fan of 2DHGs. (orig.)

  7. Investigating the Mobility of Light Autonomous Tracked Vehicles using a High Performance Computing Simulation Capability

    Science.gov (United States)

    Negrut, Dan; Mazhar, Hammad; Melanz, Daniel; Lamb, David; Jayakumar, Paramsothy; Letherwood, Michael; Jain, Abhinandan; Quadrelli, Marco

    2012-01-01

    This paper is concerned with the physics-based simulation of light tracked vehicles operating on rough deformable terrain. The focus is on small autonomous vehicles, which weigh less than 100 lb and move on deformable and rough terrain that is feature rich and no longer representable using a continuum approach. A scenario of interest is, for instance, the simulation of a reconnaissance mission for a high mobility lightweight robot where objects such as a boulder or a ditch that could otherwise be considered small for a truck or tank, become major obstacles that can impede the mobility of the light autonomous vehicle and negatively impact the success of its mission. Analyzing and gauging the mobility and performance of these light vehicles is accomplished through a modeling and simulation capability called Chrono::Engine. Chrono::Engine relies on parallel execution on Graphics Processing Unit (GPU) cards.

  8. Experiences of high dose rate interstitial brachytherapy for carcinoma of the mobile tongue

    Energy Technology Data Exchange (ETDEWEB)

    Ikeda, Hiroshi; Inoue, Toshihiko; Yamazaki, Hideya (Osaka Univ. (Japan). Faculty of Medicine) (and others)

    1994-03-01

    Interstitial brachytherapy was conducted for mobile tongue carcinoma using a high dose rate remote afterloading machine with small [sup 192]I source. Detailed method, named as 'linked double-botton technique', is to approach from submandibular skin by an open-ended stainless steel needles to the tongue lesion, and to replace each needle into flexible nylon tube from the oral cavity. Delivered dose was 60 Gy/10 Fr./5-6 days at the distance 5 mm from the source plane. Ten patients with mobile tongue carcinoma Tl-2N0 were treated with this method from October 1991 through August 1992. Local was uncontrolled in one patient, in whom the lesion was combined with leukoplakia at both lateral borders of the tongue. This was in accordance with the result in low dose rate treatment. This can be a substitute to low dose rate system for treatment of mobile tongue carcinoma. (author).

  9. Electrical instability of high-mobility zinc oxynitride thin-film transistors upon water exposure

    Science.gov (United States)

    Kim, Dae-Hwan; Jeong, Hwan-Seok; Kwon, Hyuck-In

    2017-03-01

    We investigate the effects of water absorption on the electrical performance and stability in high-mobility zinc oxynitride (ZnON) thin-film transistors (TFTs). The ZnON TFT exhibits a smaller field-effect mobility, lower turn-on voltage, and higher subthreshold slope with a deteriorated electrical stability under positive gate bias stresses after being exposed to water. From the Hall measurements, an increase of the electron concentration and a decrease of the Hall mobility are observed in the ZnON thin film after water absorption. The observed phenomena are mainly attributed to the water molecule-induced increase of the defective ZnXNY bond and the oxygen vacancy inside the ZnON thin film based on the x-ray photoelectron spectroscopy analysis.

  10. High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors

    Institute of Scientific and Technical Information of China (English)

    Gu Wen-Ping; Duan Huan-Tao; Ni Jin-Yu; Hao Yue; Zhang Jin-Cheng; Feng Qian; Ma Xiao-Hua

    2009-01-01

    AlGaN/GaN high electron mobility transistors(HEMTs)are fabricated by employing SiN passivation,this paper investigates the degradation due to the high-electric-field stress.After the stress,a recoverable degradation has been found,consisting of the decrease of saturation drain current IDsat,maximal transconductance gm,and the positive shift of threshold voltage VTH at high drain-source voltage VDS.The high-electric-field stress degrades the electric characteristics of AlGaN/GaN HEMTs because the high field increases the electron trapping at the surface and in AlGaN barrier layer.The SiN passivation of AlGaN/GaN HEMTs decreases the surface trapping and 2DEG depletion a little during the high-electric-field stress.After the hot carrier stress with VDS=20 V and VGS=0 V applied to the device for 104 sec,the SiN passivation decreases the stress-induced degradation of IDsat from 36% to 30%.Both on-state and pulse-state stresses produce comparative decrease of IDsat,which shows that although the passivation is effective in suppressing electron trapping in surface states,it does not protect the device from high-electric-field degradation in nature.So passivation in conjunction with other technological solutions like cap layer,prepassivation surface treatments.or field-plate gate to weaken high-electric-field degradation should be adopted.

  11. AlGaN/GaN High Electron Mobility Transistors for High-Power and Low-Noise Applications

    Institute of Scientific and Technical Information of China (English)

    Wang Xiaoguang; Dabiran Amir M; Hartmann Ralf; Chow Peter P

    2004-01-01

    The paper different aspects of MBE growth of nitride-based high electron mobility transistor (HEMT) and dilute-nitride, AlGaAsN-based, heterostructures were discussed. New growth and monitoring techniques developed at SVT were described and recent device results were presented.

  12. High-Frequency Link Inverter for Fuel Cells Based on Multiple-Carrier PWM

    Institute of Scientific and Technical Information of China (English)

    2004-01-01

    HIGH-FREQUENCY (I-IF) ac link inverter topologies, with or without soft switching, have important practical advantages compared to more conventional dc link inverters in terms of isolation, size of magnetics, and other properties. It is possible to obtain these basic advantages directly in a conventional PWM inverter with trans former-coupled output, but only if the transformer can handle the low modulating frequency. HF link topologies have not been common for medium power (1 to 20kW), largely because of the number of power stages and control complexity.

  13. 47 CFR 20.11 - Interconnection to facilities of local exchange carriers.

    Science.gov (United States)

    2010-10-01

    ... CARRIER SERVICES COMMERCIAL MOBILE RADIO SERVICES § 20.11 Interconnection to facilities of local exchange... carrier shall pay reasonable compensation to a commercial mobile radio service provider in connection with terminating traffic that originates on facilities of the local exchange carrier. (2) A commercial mobile...

  14. An ethnic studies model of community mobilization: collaborative partnership with a high-risk public high school.

    Science.gov (United States)

    Sobredo, James; Kim-Ju, Greg; Figueroa, Julie; Mark, Gregory Yee; Fabionar, James

    2008-03-01

    In December 2001, the Department of Ethnic Studies at California State University, Sacramento initiated a community partnership project with Hiram Johnson High School and Sacramento's Healthy Start to promote ethnic understanding, improve academic performance, and reduce youth violence. This paper presents the community mobilization efforts by this partnership in developing and implementing a community service project to address emerging community-identified social and educational issues. The paper also examines the role of an Ethnic Studies Model in community mobilization and shares its key components.

  15. Performance Analysis of a Highly Available Home Agent in Mobile Networks

    Directory of Open Access Journals (Sweden)

    Abdelgadir T. Abdelgadir

    2011-01-01

    Full Text Available Problem statement: Network Mobility as a service is provided by the NEMO protocol in IPv6 environments. NEMO is an extension to MIPv6 and thus inherits the same reliability problems of MIPv6. MIPv6 is not reliable because the Home Agent (HA is a single point of failure. In order to provide real-time services for MIPv6 networks, reliability should be considered as part of any high availability solution used to deploy Mobile IPv6 networks. Approach: Many approaches have been taken to solve the problem of HA as a single point of failure. In our proposed solution, failure detection and recovery is handled by the home agent. Therefore, recovery is transparent to the mobile network. Results: In this study we opted for using HA redundancy to provide a highly available home agent solution which achieves recovery times suitable for real-time applications. Conclusion: The results show that achieving high availability in IPv6 based mobile networks which support NEMO is possible.

  16. Decoupling single nanowire mobilities limited by surface scattering and bulk impurity scattering

    Energy Technology Data Exchange (ETDEWEB)

    Khanal, D. R.; Levander, A. X.; Wu, J. [Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States); Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Yu, K. M.; Liliental-Weber, Z.; Walukiewicz, W. [Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Grandal, J.; Sanchez-Garcia, M. A.; Calleja, E. [Department of Ingenieria Electronica-ISOM, Universidad Politecnica, Ciudad Universitaria, 28040 Madrid (Spain)

    2011-08-01

    We demonstrate the isolation of two free carrier scattering mechanisms as a function of radial band bending in InN nanowires via universal mobility analysis, where effective carrier mobility is measured as a function of effective electric field in a nanowire field-effect transistor. Our results show that Coulomb scattering limits effective mobility at most effective fields, while surface roughness scattering only limits mobility under very high internal electric fields. High-energy {alpha} particle irradiation is used to vary the ionized donor concentration, and the observed decrease in mobility and increase in donor concentration are compared to Hall effect results of high-quality InN thin films. Our results show that for nanowires with relatively high doping and large diameters, controlling Coulomb scattering from ionized dopants should be given precedence over surface engineering when seeking to maximize nanowire mobility.

  17. Oxidative stability of high-oleic sunflower oil in a porous starch carrier.

    Science.gov (United States)

    Belingheri, Claudia; Giussani, Barbara; Rodriguez-Estrada, Maria Teresa; Ferrillo, Antonio; Vittadini, Elena

    2015-01-01

    This study evaluates the oxidation level of high-oleic sunflower oil (HOSO) plated onto porous starch as an alternative to spray drying. Encapsulated oils were subjected to accelerated oxidation by heat and light exposure, and peroxide value (PV) and conjugated dienes (CD) were measured. Bulk oil was the control. PV increased in all samples with increased light exposure, with similar values being reached by oil carried on porous starch and spray dried oil. The encapsulation processes determined a reduced effect of light on the increase of CD in the oil, as compared to bulk oil. Spray dried oil presented the highest CD in the experimental domain considered. Since similar levels of PV and lower levels of CD were shown in the HOSO carried on porous starch compared to the spray dried HOSO, plating flavour oils on porous starch could be a suitable technological alternative to spray drying, for flavour encapsulation.

  18. Highly sensitive nonlinear luminescent ceramics for volumetric and multilayer data carriers

    Energy Technology Data Exchange (ETDEWEB)

    Martynovich, E F; Dresvyanskiy, V P [Irkutsk Branch of Institute of Laser Physics, Siberian Branch, Russian Academy of Sciences, Irkutsk (Russian Federation); Voitovich, A P [B.I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk (Belarus); Bagayev, S N [Institute of Laser Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk (Russian Federation)

    2015-10-31

    The interaction of optical ceramics based on wide-bandgap crystals with near-IR femtosecond laser radiation is studied experimentally. The formation of luminescent centres in LiF and MgF{sub 2} ceramics under the action of single laser pulses is considered. Two interaction regimes are used. In the regime of low-aperture focusing of laser radiation (800 nm, 30 fs, 0.3 mJ), multiple selffocusing and filamentation in the samples are observed. The luminescent centres are formed in thin channels induced by light filaments. The average effective self-focusing length is ∼100 μm; the formation of luminescent centres begins at this length and ceases at a wavelength of about 380 mm. The luminescent trace (spur) induced by a single laser filament was ∼30 μm long and 1.3 μm in diameter. The second regime of light interaction with the sample was based on high-aperture focusing with a simultaneous decrease in the laser pulse energy. This led to the formation of single pits with a diameter smaller than the optical diffraction limit. The luminescent centres induced by the laser radiation were aggregated colour centres. The mechanism of their creation included the highly-nonlinear generation of electron – hole pairs in the filamentation region, their recombination with the formation of anion excitons and the decay of excitons into Fresnel defects by the Lushchik – Vitol – Hersh – Pooley mechanism, as well as their recharging, migration and aggregation. (laser applications and other topics in quantum electronics)

  19. Accurate on-chip measurement of the Seebeck coefficient of high mobility small molecule organic semiconductors

    Directory of Open Access Journals (Sweden)

    C. N. Warwick

    2015-09-01

    Full Text Available We present measurements of the Seebeck coefficient in two high mobility organic small molecules, 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT and 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (C10-DNTT. The measurements are performed in a field effect transistor structure with high field effect mobilities of approximately 3 cm2/V s. This allows us to observe both the charge concentration and temperature dependence of the Seebeck coefficient. We find a strong logarithmic dependence upon charge concentration and a temperature dependence within the measurement uncertainty. Despite performing the measurements on highly polycrystalline evaporated films, we see an agreement in the Seebeck coefficient with modelled values from Shi et al. [Chem. Mater. 26, 2669 (2014] at high charge concentrations. We attribute deviations from the model at lower charge concentrations to charge trapping.

  20. High Speed A/D DSP Interface for Carrier Doppler Tracking

    Science.gov (United States)

    Baggett, Timothy

    1998-01-01

    As on-board satellite systems continue to increase in ability to perform self diagnostic checks, it will become more important for satellites to initiate ground communications contact. Currently, the NASA Space Network requires users to pre-arranged times for satellite communications links through the Tracking and Data Relay Satellite (TDRS). One of the challenges in implementing an on-demand access protocol into the Space Network, is the fact that a low Earth orbiting (LEO) satellite's communications will be subject to a doppler shift which is outside the capability of the NASA ground station to lock onto. In a prearranged system, the satellite's doppler is known a priori, and the ground station is able to lock onto the satellite's signal. This paper describes the development of a high speed analog to digital interface into a Digital Signal Processor (DSP). This system will be used for identifying the doppler shift of a LEO satellite through the Space Network, and aiding the ground station equipment in locking onto the signal. Although this interface is specific to one application, it can be used as a basis for interfacing other devices with a DSP.

  1. Carrier localization in InN/InGaN multiple-quantum wells with high In-content

    OpenAIRE

    Valdueza Felip, Sirona; Rigutti, Lorenzo; Naranjo, Fernando; Ruterana, Pierre; Mangeney, Juliette; Julien, François H; González-Herráez, Miguel; Monroy, Eva

    2012-01-01

    We study the carrier localization in InN/In0.9Ga0.1N multiple-quantum-wells (MQWs) and bulk InN by means of temperature-dependent photoluminescence and pump-probe measurements at 1.55 lm. The S-shaped thermal evolution of the emission energy of the InN film is attributed to carrier localization at structural defects with an average localization energy of 12 meV. Carrier localization is enhanced in the MQWs due to well/barrier thickness and ternary alloy composition fluctuations, ...

  2. Performance evaluation of a high-resolution parallel-plate differential mobility analyzer

    Directory of Open Access Journals (Sweden)

    J. P. Santos

    2009-04-01

    Full Text Available A high-resolution differential mobility analyzer (DMA, specially designed for (i the measurement of ion mobility spectra, and (ii the generation of a continuous stream of monomobile ions, has been developed and tested. The apparatus consists of two parallel-plate electrodes between which an electric field is applied. The test ion stream flows into the instrument through a narrow rectangular slit made in one of the electrodes, and migrates toward the other electrode driven by the applied field, while being transported by a stream of clean air which flows parallel to the plates at Reynolds number between 2×104 and 9×104 in laminar flow conditions. The collector electrode contains also a narrow slit through which ions of the desired mobility are withdrawn out of DMA. The classified ion current is measured with a high-sensitivity electrometer having a noise level around 0.1 fA.

    The theory behind the DMA operation is first discussed, focusing on the special case of parallel-plate geometry. Some generic results showing the stability and repeatability of the measurements and the resolving power of the instrument are presented next. The last part of the paper deals with the application of the apparatus to the study of the effect of humidity and aging time on the mobility spectra of air ions generated by a low-activity 241Am source.

  3. Performance evaluation of a high-resolution parallel-plate differential mobility analyzer

    Directory of Open Access Journals (Sweden)

    J. P. Santos

    2008-09-01

    Full Text Available A high-resolution differential mobility analyzer (DMA, specially designed for

    (i the measurement of ion mobility spectra, and
    (ii the generation of a continuous stream of monomobile ions,

    has been developed and tested. The apparatus consists of two parallel-plate electrodes between which an electric field is applied. The test ion stream flows into the instrument through a narrow rectangular slit made in one of the electrodes, and migrates toward the other electrode driven by the applied field, while being transported by a stream of clean air which flows parallel to the plates at Reynolds number between 2×104 and 9×104 in laminar flow conditions. The collector electrode contains also a narrow slit through which ions of the desired mobility are withdrawn out of DMA. The classified ion current is measured with a high-sensitivity electrometer having a noise level around 0.1 fA.

    The theory behind the DMA operation is first discussed, focusing on the special case of parallel-plate geometry. Some generic results showing the stability and repeatability of the measurements and the resolving power of the instrument are presented next. The last part of the paper deals with the application of the apparatus to the study of the effect of humidity and aging time on the mobility spectra of air ions generated by a low-activity 241Am source.

  4. Experiences from Implementing a Mobile Multiplayer Real-Time Game for Wireless Networks with High Latency

    Directory of Open Access Journals (Sweden)

    Alf Inge Wang

    2009-01-01

    Full Text Available This paper describes results and experiences from designing, implementing, and testing a multiplayer real-time game over mobile networks with high latency. The paper reports on network latency and bandwidth measurements from playing the game live over GPRS, EDGE, UMTS, and WLAN using the TCP and the UDP protocols. These measurements describe the practical constraints of various wireless networks and protocols when used for mobile multiplayer game purposes. Further, the paper reports on experiences from implementing various approaches to minimize issues related to high latency. Specifically, the paper focuses on a discussion about how much of the game should run locally on the client versus on the server to minimize the load on the mobile device and obtain sufficient consistency in the game. The game was designed to reveal all kinds of implementation issues of mobile network multiplayer games. The goal of the game is for a player to push other players around and into traps where they loose their lives. The game relies heavily on collision detection between the players and game objects. The paper presents experiences from experimenting with various approaches that can be used to handle such collisions, and highlights the advantages and disadvantages of the various approaches.

  5. High mobility graphene ion-sensitive field-effect transistors by noncovalent functionalization

    Science.gov (United States)

    Fu, W.; Nef, C.; Tarasov, A.; Wipf, M.; Stoop, R.; Knopfmacher, O.; Weiss, M.; Calame, M.; Schönenberger, C.

    2013-11-01

    Noncovalent functionalization is a well-known nondestructive process for property engineering of carbon nanostructures, including carbon nanotubes and graphene. However, it is not clear to what extend the extraordinary electrical properties of these carbon materials can be preserved during the process. Here, we demonstrated that noncovalent functionalization can indeed delivery graphene field-effect transistors (FET) with fully preserved mobility. In addition, these high-mobility graphene transistors can serve as a promising platform for biochemical sensing applications.Noncovalent functionalization is a well-known nondestructive process for property engineering of carbon nanostructures, including carbon nanotubes and graphene. However, it is not clear to what extend the extraordinary electrical properties of these carbon materials can be preserved during the process. Here, we demonstrated that noncovalent functionalization can indeed delivery graphene field-effect transistors (FET) with fully preserved mobility. In addition, these high-mobility graphene transistors can serve as a promising platform for biochemical sensing applications. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr03940d

  6. Influence of the carrier mobility distribution on the Hall and the Nernst effect measurements in n-type InSb

    Energy Technology Data Exchange (ETDEWEB)

    Madon, B.; Wegrowe, J.-E.; Drouhin, H.-J. [Laboratoire des Solides Irradiés, CNRS UMR 7642, CEA-DSM-IRAMIS, Ecole polytechnique, Université Paris-Saclay, 91128 Palaiseau (France); Liu, X.; Furdyna, J. [Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Khodaparast, G. A., E-mail: khoda@vt.edu [Department of Physics, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2016-01-14

    In this study, we report magneto-resistance measurements on an n-doped InSb film, to separate the contributions of the electrical currents from the heat currents. We have demonstrated a prototype for a magnetic field sensor which is powered by heat currents and does not require any electrical current. We fabricated two Hall bars, where a low frequency (f = 0.05 Hz) AC current, was applied between the two contacts in one of the Hall bars. Separating the f and 2f components of the voltage measured across the second Hall bar was used to distinguish between the electrical and the heat contributions to the electron currents. Our observations can be modeled using a Gaussian distribution of mobility within the sample.

  7. Carrier localization in InN/InGaN multiple-quantum wells with high In-content

    Science.gov (United States)

    Valdueza-Felip, S.; Rigutti, L.; Naranjo, F. B.; Ruterana, P.; Mangeney, J.; Julien, F. H.; González-Herráez, M.; Monroy, E.

    2012-08-01

    We study the carrier localization in InN/In0.9Ga0.1N multiple-quantum-wells (MQWs) and bulk InN by means of temperature-dependent photoluminescence and pump-probe measurements at 1.55 μm. The S-shaped thermal evolution of the emission energy of the InN film is attributed to carrier localization at structural defects with an average localization energy of ˜12 meV. Carrier localization is enhanced in the MQWs due to well/barrier thickness and ternary alloy composition fluctuations, leading to a localization energy above 35 meV and longer carrier relaxation time. As a result, the luminescence efficiency in the MQWs is improved by a factor of five over bulk InN.

  8. Application of high-definition display technology to the design of mobile client/server systems

    Science.gov (United States)

    Johnson, Roger L.; Williams, D. E.

    1994-04-01

    Although the major market force behind the development of high definition display systems is consumer television, there are also a number of important applications for this technology in computer systems which are being designed for the transportation, manufacturing, field engineering, maintenance, and scientific research industries. In many of these applications the computer workstations will need to be highly mobile (i.e. easily transported and often hand carried) and will require flat panel, projection, and virtual image high definition displays to provide graphics and imagery to the user at the point of action. One such important area of endeavor which includes all of the above applications is the international manned space exploration and science program. Current research work underway at SAIC is focused on the development of advanced mobile computing systems which utilize high definition displays. These systems are being specifically designed to support the user in the remote field environments anticipated by the space exploration program. This paper provides a view of future utilization of high definition displays and mobile computing systems in the remote field environments associated with the manned space program. The presentation will illustrate how the development of these systems can be used to greatly improve worker efficiency through the concept of telepresence.

  9. Enhancing Charge Carrier Lifetime in Metal Oxide Photoelectrodes through Mild Hydrogen Treatment

    KAUST Repository

    Jang, Ji-Wook

    2017-08-25

    Widespread application of solar water splitting for energy conversion is largely dependent on the progress in developing not only efficient but also cheap and scalable photoelectrodes. Metal oxides, which can be deposited with scalable techniques and are relatively cheap, are particularly interesting, but high efficiency is still hindered by the poor carrier transport properties (i.e., carrier mobility and lifetime). Here, a mild hydrogen treatment is introduced to bismuth vanadate (BiVO4), which is one of the most promising metal oxide photoelectrodes, as a method to overcome the carrier transport limitations. Time-resolved microwave and terahertz conductivity measurements reveal more than twofold enhancement of the carrier lifetime for the hydrogen-treated BiVO4, without significantly affecting the carrier mobility. This is in contrast to the case of tungsten-doped BiVO4, although hydrogen is also a donor type dopant in BiVO4. The enhancement in carrier lifetime is found to be caused by significant reduction of trap-assisted recombination, either via passivation or reduction of deep trap states related to vanadium antisite on bismuth or vanadium interstitials according to density functional theory calculations. Overall, these findings provide further insights on the interplay between defect modulation and carrier transport in metal oxides, which benefit the development of low-cost, highly-efficient solar energy conversion devices.

  10. Surface-active derivative of inulin (Inutec® SP1) is a superior carrier for solid dispersions with a high drug load

    NARCIS (Netherlands)

    Srinarong, Parinda; Hämäläinen, Suvi; Visser, Marinella R.; Hinrichs, Wouter L.J; Ketolainen, Jarkko; Frijlink, Henderik W.

    2011-01-01

    The aim of this study was to compare the applicability of inulin, its surface-active derivative (Inutec® SP1), and polyvinylpyrrolidone (PVP) as carriers in high drug load solid dispersions (SDs) for improving the dissolution rate of a range of lipophilic drugs (diazepam, fenofibrate, ritonavir, and

  11. Clinical evaluation of high-risk HPV detection on self-samples using the indicating FTA-elute solid-carrier cartridge

    NARCIS (Netherlands)

    Geraets, D.T.; Baars, R. van; Alonso, I.; Ordi, J.; Torne, A.; Melchers, W.J.G.; Meijer, C.J.W.; Quint, W.G.V.

    2013-01-01

    BACKGROUND: High-risk human papillomavirus (hrHPV) testing in cervical screening is usually performed on physician-taken cervical smears in liquid-based medium. However, solid-state specimen carriers allow easy, non-hazardous storage and transportation and might be suitable for self-collection by

  12. High incidence of loss of heterozygosity at chromosome 17p13 in breast tumours from BRCA2 mutation carriers.

    Science.gov (United States)

    Eiriksdottir, G; Barkardottir, R B; Agnarsson, B A; Johannesdottir, G; Olafsdottir, K; Egilsson, V; Ingvarsson, S

    1998-01-08

    Breast tumours from BRCA1 and BRCA2 mutation carriers are genetically instable and display specific patterns of chromosomal aberrations, suggestive of distinct genetic pathways in tumour progression. The frequency of abnormalities affecting chromosome 17p and the TP53 gene was determined in 27 breast tumours from 26 female patients carrying the Icelandic BRCA2 founder mutation (999del5). Loss of heterozygosity (LOH) was detected in 23 of the 27 tumours (85%). The majority of tumours manifesting LOH had lost a large region on 17p, although a more restricted loss, including the TP53 locus was seen in a few tumours. Positive p53 immunostaining was observed in 18 of 26 tumours (69%). However, mutations in the TP53 gene were detected in only three tumours (11%), including a missense (codon 139) and a nonsense mutation (codon 306) in two tumours with moderate p53 expression and a frameshift deletion (codon 182) in a tumour with no detectable p53 expression. Positive p53 immunostaining, mainly weak, was observed in 16 of the 24 tumours (66%) without TP53 mutation. The high frequency of LOH at chromosome 17p13 suggests that one or more genes from this region are involved in the development of BRCA2-induced breast cancer. The frequent finding of weak overexpression of, presumably wild type p53 protein, suggests an alternative mechanism of TP53 involvement specific to these tumours.

  13. Role of Stress Voltage on Structural Degradation of GaN High-Electron-Mobility Transistors

    Science.gov (United States)

    2010-01-01

    GaN high-electron-mobility transistors ( HEMTs ) under high- voltage electrical stress degradation in the drain and gate current is electric field... GaN HEMTs after long-term DC and RF life tests at high voltage [12–16]. Crystallographic defects such as pits and cracks have been observed at the...created by high-voltage stress in GaN HEMTs . A complementary study of the evolution of these de- fects in the cross section as a function of stress

  14. High-mobility ZrInO thin-film transistor prepared by an all-DC-sputtering method at room temperature.

    Science.gov (United States)

    Xiao, Peng; Dong, Ting; Lan, Linfeng; Lin, Zhenguo; Song, Wei; Luo, Dongxiang; Xu, Miao; Peng, Junbiao

    2016-04-27

    Thin-film transistors (TFTs) with zirconium-doped indium oxide (ZrInO) semiconductor were successfully fabricated by an all-DC-sputtering method at room temperature. The ZrInO TFT without any intentionally annealing steps exhibited a high saturation mobility of 25.1 cm(2)V(-1)s(-1). The threshold voltage shift was only 0.35 V for the ZrInO TFT under positive gate bias stress for 1 hour. Detailed studies showed that the room-temperature ZrInO thin film was in the amorphous state with low carrier density because of the strong bonding strength of Zr-O. The room-temperature process is attractive for its compatibility with almost all kinds of the flexible substrates, and the DC sputtering process is good for the production efficiency improvement and the fabrication cost reduction.

  15. High mobility of the strongly confined hole gas in AgTaO{sub 3}/SrTiO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Schwingenschloegl, Udo; Nazir, Safdar; Upadhyay-Kahaly, Mousumi [KAUST, PSE Division, Thuwal (Saudi Arabia)

    2013-07-01

    A theoretical study of the two-dimensional hole gas at the (AgO){sup -}/(TiO{sub 2}){sup 0} p-type interface in the AgTaO{sub 3}/SrTiO{sub 3}(001) heterostructure is presented. The Ag 4d states strongly hybridize with the O 2p states and contribute to the hole gas. It is demonstrated that the holes are confined to an ultra thin layer (∝ 4.9 Aa) with a considerable carrier density of ∝ 10{sup 14} cm{sup -2}. We estimate a hole mobility of 18.6 cm{sup 2}V{sup -1}s{sup -1}, which is high enough to enable device applications.

  16. Synergic Adsorption–Biodegradation by an Advanced Carrier for Enhanced Removal of High-Strength Nitrogen and Refractory Organics

    KAUST Repository

    Ahmad, Muhammad

    2017-03-29

    Coking wastewater contains not only high-strength nitrogen but also toxic biorefractory organics. This study presents simultaneous removal of high-strength quinoline, carbon, and ammonium in coking wastewater by immobilized bacterial communities composed of a heterotrophic strain Pseudomonas sp. QG6 (hereafter referred as QG6), ammonia-oxidizing bacteria (AOB), and anaerobic ammonium oxidation bacteria (anammox). The bacterial immobilization was implemented with the help of a self-designed porous cubic carrier that created structured microenvironments including an inner layer adapted for anaerobic bacteria, a middle layer suitable for coaggregation of certain aerobic and anaerobic bacteria, and an outer layer for heterotrophic bacteria. By coating functional polyurethane foam (FPUF) with iron oxide nanoparticles (IONPs), the biocarrier (IONPs-FPUF) could provide a good outer-layer barrier for absorption and selective treatment of aromatic compounds by QG6, offer a conducive environment for anammox in the inner layer, and provide a mutualistic environment for AOB in the middle layer. Consequently, simultaneous nitrification and denitrification were reached with the significant removal of up to 322 mg L (98%) NH, 311 mg L (99%) NO, and 633 mg L (97%) total nitrogen (8 mg L averaged NO concentration was recorded in the effluent), accompanied by an efficient removal of chemical oxygen demand by 3286 mg L (98%) and 350 mg L (100%) quinoline. This study provides an alternative way to promote synergic adsorption and biodegradation with the help of a modified biocarrier that has great potential for treatment of wastewater containing high-strength carbon, toxic organic pollutants, and nitrogen.

  17. Improving Success Ratio of Object Search in Highly-Dynamic Mobile P2P Networks

    Science.gov (United States)

    Takeshita, Kei; Sasabe, Masahiro; Nakano, Hirotaka

    Mobile Ad Hoc Networks (MANETs) are temporal and infrastructure-independent wireless networks that consist of mobile nodes. For instance, a MANET can be used as an emergent network for communication among people when a disaster occurred. Since there is no central server in the network, each node has to find out its desired information (objects) by itself. Constructing a mobile Peer-to-Peer (P2P) network over the MANET can support the object search. Some researchers proposed construction schemes of mobile P2P networks, such as Ekta and MADPastry. They integrated DHT-based application-layer routing and network-layer routing to increase search efficiency. Furthermore, MADPastry proposed a clustering method which groups the overlay nodes according to their physical distance. However, it has also been pointed out that the search efficiency deteriorates in highly dynamic environments where nodes quickly move around. In this paper, we focus on route disappearances in the network layer which cause the deterioration of search efficiency. We describe the detail of this problem and evaluate quantitatively it through simulation experiments. We extend MADPastry by introducing a method sharing objects among nodes in a cluster. Through simulation experiments, we show that the proposed method can achieve up to 2.5 times larger success rate of object search than MADPastry.

  18. Demonstration of InAlN/AlGaN high electron mobility transistors with an enhanced breakdown voltage by pulsed metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xue, JunShuai, E-mail: junshuaixue@hotmail.com; Zhang, JinCheng; Hao, Yue [Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2016-01-04

    In this work, InAlN/AlGaN heterostructures employing wider bandgap AlGaN instead of conventional GaN channel were grown on sapphire substrate by pulsed metal organic chemical vapor deposition, where the nominal Al composition in InAlN barrier and AlGaN channel were chosen to be 83% and 5%, respectively, to achieve close lattice-matched condition. An electron mobility of 511 cm{sup 2}/V s along with a sheet carrier density of 1.88 × 10{sup 13 }cm{sup −2} were revealed in the prepared heterostructures, both of which were lower compared with lattice-matched InAlN/GaN due to increased intrinsic alloy disorder scattering resulting from AlGaN channel and compressively piezoelectric polarization in barrier, respectively. While the high electron mobility transistor (HEMT) processed on these structures not only exhibited a sufficiently high drain output current density of 854 mA/mm but also demonstrated a significantly enhanced breakdown voltage of 87 V, which is twice higher than that of reported InAlN/GaN HEMT with the same device dimension, potential characteristics for high-voltage operation of GaN-based electronic devices.

  19. Demonstration of InAlN/AlGaN high electron mobility transistors with an enhanced breakdown voltage by pulsed metal organic chemical vapor deposition

    Science.gov (United States)

    Xue, JunShuai; Zhang, JinCheng; Hao, Yue

    2016-01-01

    In this work, InAlN/AlGaN heterostructures employing wider bandgap AlGaN instead of conventional GaN channel were grown on sapphire substrate by pulsed metal organic chemical vapor deposition, where the nominal Al composition in InAlN barrier and AlGaN channel were chosen to be 83% and 5%, respectively, to achieve close lattice-matched condition. An electron mobility of 511 cm2/V s along with a sheet carrier density of 1.88 × 1013 cm-2 were revealed in the prepared heterostructures, both of which were lower compared with lattice-matched InAlN/GaN due to increased intrinsic alloy disorder scattering resulting from AlGaN channel and compressively piezoelectric polarization in barrier, respectively. While the high electron mobility transistor (HEMT) processed on these structures not only exhibited a sufficiently high drain output current density of 854 mA/mm but also demonstrated a significantly enhanced breakdown voltage of 87 V, which is twice higher than that of reported InAlN/GaN HEMT with the same device dimension, potential characteristics for high-voltage operation of GaN-based electronic devices.

  20. Recent progress in high-mobility thin-film transistors based on multilayer 2D materials

    Science.gov (United States)

    Hong, Young Ki; Liu, Na; Yin, Demin; Hong, Seongin; Kim, Dong Hak; Kim, Sunkook; Choi, Woong; Yoon, Youngki

    2017-04-01

    Two-dimensional (2D) layered semiconductors are emerging as promising candidates for next-generation thin-film electronics because of their high mobility, relatively large bandgap, low-power switching, and the availability of large-area growth methods. Thin-film transistors (TFTs) based on multilayer transition metal dichalcogenides or black phosphorus offer unique opportunities for next-generation electronic and optoelectronic devices. Here, we review recent progress in high-mobility transistors based on multilayer 2D semiconductors. We describe the theoretical background on characterizing methods of TFT performance and material properties, followed by their applications in flexible, transparent, and optoelectronic devices. Finally, we highlight some of the methods used in metal-semiconductor contacts, hybrid structures, heterostructures, and chemical doping to improve device performance.

  1. DC-current induced magneto-oscillations in very high-mobility 2D electron gas

    Science.gov (United States)

    Yang, C. L.; Zhang, Chi; Du, R. R.; Pfeiffer, L. N.; West, K. W.

    2007-03-01

    We report on a systematic experimental study of DC-current induced magneto-oscillations [1] using Hall bar samples of very high-mobility (8-20 x 10^6 cm^2/Vs) GaAs/AlxGa1-xAs heterostructures. Previously we show that remarkable nonlinear resistance and 1/B oscillations can arise when a high bias current (Ix) is passed through a Hall bar (width w), and the effect can be explained by a Zener tunneling model in the presence of a tilting Hall field [1]. Data of resistance Rxx≡Vx/Ix, differential resistance rxx≡Vx/Ix, and rxx'≡rxx/Ix in higher mobility samples, which show higher order oscillations, have confirmed the validity of this model. Our temperature dependent date show that this effect can persist to kBT>φc, where φc is the cyclotron energy. [1] Yang et al, Phys. Rev. Lett. 89, 076801 (2002).

  2. Charge transport in high mobility molecular semiconductors: classical models and new theories.

    Science.gov (United States)

    Troisi, Alessandro

    2011-05-01

    The theories developed since the fifties to describe charge transport in molecular crystals proved to be inadequate for the most promising classes of high mobility molecular semiconductors identified in the recent years, including for example pentacene and rubrene. After reviewing at an elementary level the classical theories, which still provide the language for the understanding of charge transport in these systems, this tutorial review outlines the recent experimental and computational evidence that prompted the development of new theories of charge transport in molecular crystals. A critical discussion will illustrate how very rarely it is possible to assume a charge hopping mechanism for high mobility organic crystals at any temperature. Recent models based on the effect of non-local electron-phonon coupling, dynamic disorder, coexistence of localized and delocalized states are reviewed. Additionally, a few more recent avenues of theoretical investigation, including the study of defect states, are discussed.

  3. Varying Overhead Ad Hoc on Demand Vector Routing in Highly Mobile Ad Hoc Network

    Directory of Open Access Journals (Sweden)

    V. Balaji

    2011-01-01

    Full Text Available Problem statement: An inherent feature of mobile ad hoc networks is the frequent change of network topology leading to stability and reliability problems of the network. Highly dynamic and dense network have to maintain acceptable level of service to data packets and limit the network control overheads. This capability is closely related as how quickly the network protocol control overhead is managed as a function of increased link changes. Dynamically limiting the routing control overheads based on the network topology improves the throughput of the network. Approach: In this study we propose Varying Overhead - Ad hoc on Demand Vector routing protocol (VO-AODV for highly dynamic mobile Ad hoc network. The VO-AODV routing protocol proposed dynamically modifies the active route time based on the network topology. Results and Conclusion: Simulation results prove that the proposed model decreases the control overheads without decreasing the QOS of the network.

  4. Task Phase Recognition for Highly Mobile Workers in Large Building Complexes

    DEFF Research Database (Denmark)

    Stisen, Allan; Mathisen, Andreas; Krogh, Søren

    2016-01-01

    available for sensing and recognizing the activities and task phases the workers currently perform as such technologies have to be easily deployable and maintainable at a large scale. The methods presented in this paper consist of features that utilize data from sensing systems which are common in large......Being aware of activities of co-workers is a basic and vital mechanism for efficient work in highly distributed work settings. Thus, automatic recognition of the task phases the mobile workers are currently (or have been) in has many applications, e.g., efficient coordination of tasks...... by visualizing coworkers’ task progress, automatic notifications based on context awareness, and record filing of task statuses and completions. This paper presents methods to sense and detect highly mobile workers’ tasks phases in large building complexes. Large building complexes restrict the technologies...

  5. Combining gas-phase electrophoretic mobility molecular analysis (GEMMA), light scattering, field flow fractionation and cryo electron microscopy in a multidimensional approach to characterize liposomal carrier vesicles.

    Science.gov (United States)

    Urey, Carlos; Weiss, Victor U; Gondikas, Andreas; von der Kammer, Frank; Hofmann, Thilo; Marchetti-Deschmann, Martina; Allmaier, Günter; Marko-Varga, György; Andersson, Roland

    2016-11-20

    For drug delivery, characterization of liposomes regarding size, particle number concentrations, occurrence of low-sized liposome artefacts and drug encapsulation are of importance to understand their pharmacodynamic properties. In our study, we aimed to demonstrate the applicability of nano Electrospray Gas-Phase Electrophoretic Mobility Molecular Analyser (nES GEMMA) as a suitable technique for analyzing these parameters. We measured number-based particle concentrations, identified differences in size between nominally identical liposomal samples, and detected the presence of low-diameter material which yielded bimodal particle size distributions. Subsequently, we compared these findings to dynamic light scattering (DLS) data and results from light scattering experiments coupled to Asymmetric Flow-Field Flow Fractionation (AF4), the latter improving the detectability of smaller particles in polydisperse samples due to a size separation step prior detection. However, the bimodal size distribution could not be detected due to method inherent limitations. In contrast, cryo transmission electron microscopy corroborated nES GEMMA results. Hence, gas-phase electrophoresis proved to be a versatile tool for liposome characterization as it could analyze both vesicle size and size distribution. Finally, a correlation of nES GEMMA results with cell viability experiments was carried out to demonstrate the importance of liposome batch-to-batch control as low-sized sample components possibly impact cell viability. Copyright © 2016 The Authors. Published by Elsevier B.V. All rights reserved.

  6. Two-dimensional analytical model of double-gate tunnel FETs with interface trapped charges including effects of channel mobile charge carriers

    Science.gov (United States)

    Xu, Huifang; Dai, Yuehua

    2017-02-01

    A two-dimensional analytical model of double-gate (DG) tunneling field-effect transistors (TFETs) with interface trapped charges is proposed in this paper. The influence of the channel mobile charges on the potential profile is also taken into account in order to improve the accuracy of the models. On the basis of potential profile, the electric field is derived and the expression for the drain current is obtained by integrating the BTBT generation rate. The model can be used to study the impact of interface trapped charges on the surface potential, the shortest tunneling length, the drain current and the threshold voltage for varying interface trapped charge densities, length of damaged region as well as the structural parameters of the DG TFET and can also be utilized to design the charge trapped memory devices based on TFET. The biggest advantage of this model is that it is more accurate, and in its expression there are no fitting parameters with small calculating amount. Very good agreements for both the potential, drain current and threshold voltage are observed between the model calculations and the simulated results. Project supported by the National Natural Science Foundation of China (No. 61376106), the University Natural Science Research Key Project of Anhui Province (No. KJ2016A169), and the Introduced Talents Project of Anhui Science and Technology University.

  7. High Mobility Group Protein HMGB2 Is a Critical Regulator of Plasmodium Oocyst Development*S⃞

    OpenAIRE

    Gissot, Mathieu; Ting, Li-Min; Daly, Thomas M.; Bergman, Lawrence W.; Sinnis, Photini; Kim, Kami

    2008-01-01

    The sexual cycle of Plasmodium is required for transmission of malaria from mosquitoes to mammals, but how parasites induce the expression of genes required for the sexual stages is not known. We disrupted the Plasmodium yoelii gene encoding high mobility group nuclear factor hmgb2, which encodes a DNA-binding protein potentially implicated in transcriptional regulation of malaria gene expression. We investigated its function in vivo in the vertebrate and invertebrate ...

  8. A High Speed Mobile Courier Data Access System That Processes Database Queries in Real-Time

    Science.gov (United States)

    Gatsheni, Barnabas Ndlovu; Mabizela, Zwelakhe

    A secure high-speed query processing mobile courier data access (MCDA) system for a Courier Company has been developed. This system uses the wireless networks in combination with wired networks for updating a live database at the courier centre in real-time by an offsite worker (the Courier). The system is protected by VPN based on IPsec. There is no system that we know of to date that performs the task for the courier as proposed in this paper.

  9. Interaction-induced huge magnetoresistance in a high mobility two-dimensional electron gas

    Energy Technology Data Exchange (ETDEWEB)

    Bockhorn, L.; Haug, R. J. [Institut für Festkörperphysik, Leibniz Universität Hannover, D-30167 Hannover (Germany); Gornyi, I. V. [Institut für Nanotechnologie, Karlsruher Institut of Technology, D-76021 Karlsruhe (Germany); Schuh, D. [Institut für Experimentelle und Angewandte Physik, Universität Regensburg, D-93053 Regensburg (Germany); Wegscheider, W. [ETH Zürich (Switzerland)

    2013-12-04

    A strong negative magnetoresistance is observed in a high-mobility two-dimensional electron gas in a GaAs/Al{sub 0.3}Ga{sub 0.7}As quantum well. We discuss that the negative magnetoresistance consists of a small peak induced by a combination of two types of disorder and a huge magnetoresistance explained by the interaction correction to the conductivity for mixed disorder.

  10. High Mobility Group Box Protein-1 Correlates with Renal Function in Chronic Kidney Disease (CKD)

    OpenAIRE

    Bruchfeld, Annette; Qureshi, Abdul Rashid; Lindholm, Bengt; Barany, Peter; Yang, Lihong; Stenvinkel, Peter; Tracey, Kevin J.

    2007-01-01

    Chronic kidney disease (CKD) is associated with inflammation and malnutrition and carries a markedly increased risk of cardiovascular disease (CVD). High Mobility Group Box Protein-1 (HMGB-1) is a 30-kDa nuclear and cytosolic protein known as a transcription and growth factor, recently identified as a proinflammatory mediator of tissue injury. Recent data implicates HMGB-1 in endotoxin lethality, rheumatoid arthritis, and atherosclerosis. The aim of this post-hoc, cross-sectional study was to...

  11. High Stability White Organic Light-Emitting Diode (WOLED Using Nano-Double-Ultra Thin Carrier Trapping Materials

    Directory of Open Access Journals (Sweden)

    Kan-Lin Chen

    2014-01-01

    Full Text Available The structure of indium tin oxide (ITO (100 nm/molybdenum trioxide (MoO3 (15 nm/N,N0-bis-(1-naphthyl-N,N0-biphenyl-1,10-biphenyl-4,40-diamine (NPB (40 nm/4,4′-Bis(2,2-diphenylvinyl-1,1′-biphenyl (DPVBi (10 nm/5,6,11,12-tetraphenylnaphthacene (Rubrene (0.2 nm/DPVBi (24 nm/Rubrene (0.2 nm/DPVBi (6 nm/4,7-diphenyl-1,10-phenanthroline (BPhen: cesium carbonate (Cs2Co3 (10 nm/Al (120 nm with high color purity and stability white organic light-emitting diode (WOLED was fabricated. The function of the multiple-ultra-thin material (MUTM, such as Rubrene, is as the yellow light-emitting layer and trapping layer. The results show that the MUTM has an excellent carrier capture effect, resulting in high color stability of the device at different applied voltages. The Commissions Internationale De L’Eclairage (CIE coordinate of this device at 3~7 V is few displacement and shows a very slight variation of (±0.01, ±0.01. The maximum brightness of 9986 cd/m2 and CIE coordinates of (0.346, 0.339 are obtained at 7 V. The enhanced performance of the device may result from the direct charge trapping in MUTM and it can be found in the electroluminescence (EL process.

  12. Local imaging of high mobility two-dimensional electron systems with virtual scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Pelliccione, M. [Department of Applied Physics, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Department of Physics, University of California, Santa Barbara, Santa Barbara, California 93106 (United States); Bartel, J.; Goldhaber-Gordon, D. [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Department of Physics, Stanford University, 382 Via Pueblo Mall, Stanford, California 94305 (United States); Sciambi, A. [Department of Applied Physics, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Pfeiffer, L. N.; West, K. W. [Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544 (United States)

    2014-11-03

    Correlated electron states in high mobility two-dimensional electron systems (2DESs), including charge density waves and microemulsion phases intermediate between a Fermi liquid and Wigner crystal, are predicted to exhibit complex local charge order. Existing experimental studies, however, have mainly probed these systems at micron to millimeter scales rather than directly mapping spatial organization. Scanning probes should be well-suited to study the spatial structure of these states, but high mobility 2DESs are found at buried semiconductor interfaces, beyond the reach of conventional scanning tunneling microscopy. Scanning techniques based on electrostatic coupling to the 2DES deliver important insights, but generally with resolution limited by the depth of the 2DES. In this letter, we present our progress in developing a technique called “virtual scanning tunneling microscopy” that allows local tunneling into a high mobility 2DES. Using a specially designed bilayer GaAs/AlGaAs heterostructure where the tunnel coupling between two separate 2DESs is tunable via electrostatic gating, combined with a scanning gate, we show that the local tunneling can be controlled with sub-250 nm resolution.

  13. High-throughput magnetic flow sorting of human cells selected on the basis of magnetophoretic mobility

    Science.gov (United States)

    Reece, Lisa M.; Sanders, Lehanna; Kennedy, David; Guernsey, Byron; Todd, Paul; Leary, James F.

    2010-02-01

    We have shown the potential of a new method for optimizing the separation of human stem cell subsets from peripheral blood based on a novel cell labeling technique that leverages the capabilities of a new commercially available high speed magnetic cell sorting system (IKOTECH LLC, New Albany, IN). This new system sorts cells in a continuously flowing manner using a Quadrupole Magnetic cell Sorter (QMS). The sorting mechanism is based upon the magnetophoretic mobility of the cells, a property related to the relative binding distributions of magnetic particles per cell, as determined by the utilization of a Magnetic Cell Tracking Velocimeter (MCTV). KG-1 cells were competitively labeled with anti-CD34 magnetic beads and anti-CD34 FITC to obtain an optimal level of magnetophoretic mobility as visualized by the MCTV for high throughput sort recovery in the QMS. In QMS sorting, the concept of split-flow thin channel (SPLITT) separation technology is applied by having a sample stream enter a vertical annular flow channel near the channel's interior wall followed by another sheath flow entering near the exterior wall. The two flows are initially separated by a flow splitter. They pass through the bore of a Halbach permanent quadrupole magnet assembly, which draws magnetized cells outward and deflects them into a positive outflow, while negative cells continue straight out via the inner flow lamina. QMS sorts cells based upon their magnetophoretic mobility, or the velocity of a cell per unit ponderomotive force, the counterpart of fluorescence intensity in flow cytometry. The magnetophoretic mobility distribution of a cell population, measured by automated MCTV, is used as input data for the algorithmic control of sample, sheath, and outlet flow velocities of the QMS. In this study, the relative binding distributions of magnetic particles per cell were determined by MCTV using novel sorting and sizing algorithms. The resulting mobility histograms were used to set the QMS

  14. A Novel Multi-carrier Radar for High-speed Wide-bandwidth Stepped-Frequency GPR

    Science.gov (United States)

    Kyoo Kim, Dong; Choi, Young Woo; Kang, Do Wook

    2015-04-01

    Ground Penetrating Radar (GPR) is one of the non-destructive testing methods for studying underground situations by using the electro-magnetic wave radiation effect. Two classical sensing techniques, impulsive GPR and stepped-frequency GPR, are used for a long time in various GPR applications. Signal bandwidths generated by the two techniques ranges from several hundred MHz to several GHz. For the research area of pavement survey the surveying speed is emphasized, thus impulsive GPR has been preferred to stepped-frequency GPR. To make a complete single scan operation, stepped-frequency GPR needs over hundreds of different frequency continuous wave (CW) radiations within its signal bandwidth which is the main time taking process. In case of impulsive GPR, it needs also several repeated pulses, for example from 64 to 512 repeated pulses, to do a complete single scan operation. Although the two techniques need several repeated internal operation processes, impulsive GPR is generally considered to be fast than stepped-frequency GPR. On the other hand, many studies of stepped-frequency GPR emphasizes that high-resolution scanning accuracy can be achieved by controlling each frequency component differently, such as frequency power profile, flexible bandwidth control. In case of pavement survey area, high-accuracy scanning is required within one meter deep as well as high-speed survey. The required accuracy is up to several centimeter in the material where dielectric constant is about 10. When surveying pavement, multi-element array antenna gives advantages to the measurement accuracy enhancement, where the scanning region of a 3 meters wide paved road is divided into several sub-regions as the number of the antenna element. For example, when stepped-frequency GPR requires 6msec for single scan operation and 15-element antenna is considered, the survey speed is limited to 15km/h in order to scan the road every 5cm, which is slow compared with common driving condition on

  15. Fabrication and characterization of novel high-speed InGaAs/InP uni-traveling-carrier photodetector for high responsivity

    Institute of Scientific and Technical Information of China (English)

    陈庆涛; 任晓敏; 黄永清; 费嘉瑞; 段晓峰; 刘凯; 刘锋; 康超; 汪君楚; 房文敬

    2015-01-01

    A top-illuminated circular mesa uni-traveling-carrier photodetector (UTC-PD) is proposed in this paper. By employ-ing Gaussian graded doping in InGaAs absorption layer and InP depleted layer, the responsivity and high speed response characteristics of the device are optimized simultaneously. The responsivity up to 1.071 A/W (the external quantum effi-ciency of 86%) is obtained at 1550 nm with a 40-µm diameter device under 10-V reverse bias condition. Meanwhile, the dark current of 7.874 nA and the 3-dB bandwidth of 11 GHz are obtained with the same device at a reverse bias voltage of 3V.

  16. Strontium insertion in methlyammonium lead iodide: long charge carrier lifetime and high fill factor solar cells (Conference Presentation)

    Science.gov (United States)

    Momblona, Cristina; Gil-Escrig, Lidón; Ávila, Jorge; Pérez-Del-Rey, Daniel; Forgács, David; Sessolo, Michele; Bolink, Hendrik J.

    2016-09-01

    Organic-inorganic (hybrid) lead halide perovskites are taking the lead among the emerging photovoltaics technologies, thanks to the demonstration of power conversion efficiencies exceeding 20 %. Hybrid perovskites have a wide spectrum of desirable properties; they are direct bandgap semiconductors with very high absorption coefficients, high and balanced hole and electron mobility, and large diffusion length. A unique feature of these materials is their versatility in terms of bandgap energy, which can be tuned by simple exchange of their components. In this paper we present vacuum and hybrid deposition routes for the preparation of different organic-inorganic lead perovskite thin films, and their incorporation into efficient solar cells. The influence of the type of organic semiconductors used as hole/electron transport layer in p-i-n solar cells will be presented. We also discuss their electroluminescence properties, either for applications in light-emitting diodes or as a diagnostic tool of the optical and electronic quality of perovskite thin films. Finally, the effect of additives and dopants in the perovskite absorber as well as in the charge selective layers will be described.

  17. Influences of Injection Barrier and Mobility on Recombination Rate and Zone in OLEDs

    Institute of Scientific and Technical Information of China (English)

    ZHU Ru-hui; LI Hong-jian; YAN Ling-ling; HU Jin; PAN Yan-zhi

    2006-01-01

    The luminous efficiency of organic light-emitting devices depends on the recombination probability of electrons injected at the cathode and holes at the anode. A theoretical model to calculate the distribution of current densities and the recombination rate in organic single layer devices is presented taking into account the charge injection process at each electrode, charge transport and recombination in organic layer. The calculated results indicate that efficient single-layer devices are possible by adjusting the barrier heights at two electrodes and the carrier mobilities. Lowering the barrier heights can improve the electroluminescent(EL) efficiency pronouncedly in many cases, and efficient devices are still possible using an ohmic contact to inject the low mobility carrier, and a contact limited contact to inject the high mobility carrier. All in all, high EL efficiency needs to consider sufficient recombination, enough injected carriers and well transport.

  18. The Influence of Perceived Convenience and Curiosity on Continuance Intention in Mobile English Learning for High School Students Using PDAs

    Science.gov (United States)

    Chang, Chi-Cheng; Tseng, Kuo-Hung; Liang, Chaoyun; Yan, Chi-Fang

    2013-01-01

    Mobile learning aims to utilise communication devices such as mobile devices and wireless connection in combination with e-learning systems, allowing learners to experience convenient, instant and suitable learning at unrestricted time and place. Participants were 125 Taiwanese senior high school students, whose continuance intention was examined…

  19. Hole traps associated with high-concentration residual carriers in p-type GaAsN grown by chemical beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Elleuch, Omar, E-mail: mr.omar.elleuch@gmail.com; Wang, Li; Lee, Kan-Hua; Demizu, Koshiro; Ikeda, Kazuma; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511 (Japan)

    2015-01-28

    The hole traps associated with high background doping in p-type GaAsN grown by chemical beam epitaxy are studied based on the changes of carrier concentration, junction capacitance, and hole traps properties due to the annealing. The carrier concentration was increased dramatically with annealing time, based on capacitance–voltage (C–V) measurement. In addition, the temperature dependence of the junction capacitance (C–T) was increased rapidly two times. Such behavior is explained by the thermal ionization of two acceptor states. These acceptors are the main cause of high background doping in the film, since the estimated carrier concentration from C–T results explains the measured carrier concentration at room temperature using C–V method. The acceptor states became shallower after annealing, and hence their structures are thermally unstable. Deep level transient spectroscopy (DLTS) showed that the HC2 hole trap was composed of two signals, labeled HC21 and HC22. These defects correspond to the acceptor levels, as their energy levels obtained from DLTS are similar to those deduced from C–T. The capture cross sections of HC21 and HC22 are larger than those of single acceptors. In addition, their energy levels and capture cross sections change in the same way due to the annealing. This tendency suggests that HC21 and HC22 signals originate from the same defect which acts as a double acceptor.

  20. High precision mobile location framework and its service based on virtual reference station of GPS

    Science.gov (United States)

    Liu, Chun; Sun, Liangyu; Yao, Lianbi

    2008-10-01

    The wireless communication technology and space technology are synchronously developed in recent years, which bring up the development of location based service (LBS). At present, many location technology methods were developed. However, all these methods can only provide a relative poor location precision and depend on high cost. The technology of Virtual Reference Station (VRS) of GPS is then involved in this paper. One of the objective in this paper is aim to give the LBS position structure to improve the mobile location position when a mobile position instrument is connected with VRS network. The cheaper GPS built-in Personal Designer Aid (PDA) is then used to achieve a higher precision by using RTCM data from existing VRS network. In order to obtain a high precision position when using the low-cost GPS receiver as a rover, the infrusture of the mobile differential correction system is then put forward. According to network transportation of RTCM via internet protocol (NTRIP), the message is communicated through wireless network, such as GPRS, CDMA and so on. The rough coordinate information is sent to VRS control center continuously, and then the VRS correction information is replied to rover in the data format of RTCM3.1. So the position will be updated based on mathematic solution after the decoding of RTCM3.1 data. The thought of LBS position can improve the precision, and can speed the LBS.

  1. Significant mobility enhancement in extremely thin highly doped ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Look, David C., E-mail: david.look@wright.edu [Semiconductor Research Center, Wright State University, 3640 Colonel Glenn Hwy., Dayton, Ohio 45435 (United States); Wyle Laboratories, Inc., 2601 Mission Point Blvd., Dayton, Ohio 45431 (United States); Air Force Research Laboratory Sensors Directorate, 2241 Avionics Circle, Wright-Patterson AFB, Ohio 45433 (United States); Heller, Eric R. [Air Force Research Laboratory Materials and Manufacturing Directorate, 3005 Hobson Way, Wright-Patterson AFB, Ohio 45433 (United States); Yao, Yu-Feng; Yang, C. C., E-mail: ccycc@ntu.edu.tw [Institute of Photonics and Optoelectronics, National Taiwan University, No. 1, Section 4, Roosevelt Road, Taipei 10617, Taiwan (China)

    2015-04-13

    Highly Ga-doped ZnO (GZO) films of thicknesses d = 5, 25, 50, and 300 nm, grown on 160-nm ZnO buffer layers by molecular beam epitaxy, had 294-K Hall-effect mobilities μ{sub H} of 64.1, 43.4, 37.0, and 34.2 cm{sup 2}/V-s, respectively. This extremely unusual ordering of μ{sub H} vs d is explained by the existence of a very high-mobility Debye tail in the ZnO, arising from the large Fermi-level mismatch between the GZO and the ZnO. Scattering theory in conjunction with Poisson analysis predicts a Debye-tail mobility of 206 cm{sup 2}/V-s at the interface (z = d), falling to 58 cm{sup 2}/V-s at z = d + 2 nm. Excellent fits to μ{sub H} vs d and sheet concentration n{sub s} vs d are obtained with no adjustable parameters.

  2. High-Frequency Link Inverter for Fuel Cells Based on Multiple-Carrier PWM (to continue)

    Institute of Scientific and Technical Information of China (English)

    2004-01-01

    C. Operation of a PWM Cycloconverter The concepts in Section Ⅱ-B, present a progression of solutions to known design difficulties. To incorporate these benefits and eliminate the redundant conversion step shown in Fig. 6, we propose the PWM cycloconverter shown in Fig. 7. It will be shown in Section Ⅲ. that the conventional PWM inverter can be unified through a multiple-carrier PWM framework. The control concept introduced is extended to demonstrate that multiple-carrier PWM methods lead to HF link inverters that are nearly as simple to control as conventional PWM inverters.

  3. High-mobility two-dimensional electron gases at oxide interfaces: Origins and opportunities

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Pryds, Nini; Sun, Ji-Rong

    2013-01-01

    Our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures is reviewed along with a more general background of two-dimensional electron gas (2DEG) at oxide interfaces. Due to the presence of oxygen vacancies at the...... of high-mobility all-oxide electronic devices and open a route toward the studies of mesoscopic physics with complex oxides....... between SrTiO3 and a spinel g-Al2O3 epitaxial film with compatible oxygen ion sublattices. This 2DEG exhibits an electron mobility exceeding 100000 cm2·V-1·s-1, more than one order of magnitude higher than that of hitherto investigated perovskite-type interfaces. Our findings pave a way for the design...

  4. Design of a high-mobility multi-terrain robot based on eccentric paddle mechanism.

    Science.gov (United States)

    Sun, Yi; Yang, Yang; Ma, Shugen; Pu, Huayan

    Gaining high mobility on versatile terrains is a crucial target for designing a mobile robot toward tasks such as search and rescue, scientific exploration, and environment monitoring. Inspired by dextrous limb motion of animals, a novel form of locomotion has been established in our previous study, by proposing an eccentric paddle mechanism (ePaddle) for integrating paddling motion into a traditional wheeled mechanism. In this paper, prototypes of an ePaddle mechanism and an ePaddle-based quadruped robot are presented. Several locomotion modes, including wheeled rolling, legged crawling, legged race-walking, rotational paddling, oscillating paddling, and paddle-aided rolling, are experimentally verified on testbeds with fabricated prototypes. Experimental results confirm that paddle's motion is useful in all the locomotion modes.

  5. Advancing the High Throughput Identification of Liver Fibrosis Protein Signatures Using Multiplexed Ion Mobility Spectrometry*

    Science.gov (United States)

    Baker, Erin Shammel; Burnum-Johnson, Kristin E.; Jacobs, Jon M.; Diamond, Deborah L.; Brown, Roslyn N.; Ibrahim, Yehia M.; Orton, Daniel J.; Piehowski, Paul D.; Purdy, David E.; Moore, Ronald J.; Danielson, William F.; Monroe, Matthew E.; Crowell, Kevin L.; Slysz, Gordon W.; Gritsenko, Marina A.; Sandoval, John D.; LaMarche, Brian L.; Matzke, Melissa M.; Webb-Robertson, Bobbie-Jo M.; Simons, Brenna C.; McMahon, Brian J.; Bhattacharya, Renuka; Perkins, James D.; Carithers, Robert L.; Strom, Susan; Self, Steven G.; Katze, Michael G.; Anderson, Gordon A.; Smith, Richard D.

    2014-01-01

    Rapid diagnosis of disease states using less invasive, safer, and more clinically acceptable approaches than presently employed is a crucial direction for the field of medicine. While MS-based proteomics approaches have attempted to meet these objectives, challenges such as the enormous dynamic range of protein concentrations in clinically relevant biofluid samples coupled with the need to address human biodiversity have slowed their employment. Herein, we report on the use of a new instrumental platform that addresses these challenges by coupling technical advances in rapid gas phase multiplexed ion mobility spectrometry separations with liquid chromatography and MS to dramatically increase measurement sensitivity and throughput, further enabling future high throughput MS-based clinical applications. An initial application of the liquid chromatography - ion mobility spectrometry-MS platform analyzing blood serum samples from 60 postliver transplant patients with recurrent fibrosis progression and 60 nontransplant patients illustrates its potential utility for disease characterization. PMID:24403597

  6. Advancing the high throughput identification of liver fibrosis protein signatures using multiplexed ion mobility spectrometry.

    Science.gov (United States)

    Baker, Erin Shammel; Burnum-Johnson, Kristin E; Jacobs, Jon M; Diamond, Deborah L; Brown, Roslyn N; Ibrahim, Yehia M; Orton, Daniel J; Piehowski, Paul D; Purdy, David E; Moore, Ronald J; Danielson, William F; Monroe, Matthew E; Crowell, Kevin L; Slysz, Gordon W; Gritsenko, Marina A; Sandoval, John D; Lamarche, Brian L; Matzke, Melissa M; Webb-Robertson, Bobbie-Jo M; Simons, Brenna C; McMahon, Brian J; Bhattacharya, Renuka; Perkins, James D; Carithers, Robert L; Strom, Susan; Self, Steven G; Katze, Michael G; Anderson, Gordon A; Smith, Richard D

    2014-04-01

    Rapid diagnosis of disease states using less invasive, safer, and more clinically acceptable approaches than presently employed is a crucial direction for the field of medicine. While MS-based proteomics approaches have attempted to meet these objectives, challenges such as the enormous dynamic range of protein concentrations in clinically relevant biofluid samples coupled with the need to address human biodiversity have slowed their employment. Herein, we report on the use of a new instrumental platform that addresses these challenges by coupling technical advances in rapid gas phase multiplexed ion mobility spectrometry separations with liquid chromatography and MS to dramatically increase measurement sensitivity and throughput, further enabling future high throughput MS-based clinical applications. An initial application of the liquid chromatography--ion mobility spectrometry-MS platform analyzing blood serum samples from 60 postliver transplant patients with recurrent fibrosis progression and 60 nontransplant patients illustrates its potential utility for disease characterization.

  7. High Precision Measurements of Carbon Disulfide Negative Ion Mobility and Diffusion

    CERN Document Server

    Snowden-Ifft, D P

    2013-01-01

    High precision measurements were made of mobility, lateral and longitudinal diffusion of CS2 negative ions in 40 Torr CS2 and 30 - 10 Torr CS2 - CF4. The mobility was found to be be 363.1 +/- 0.5 Torr cm2 / s V in CS2 and 408.0 +/- 0.8 Torr cm2 / s V in the CS2 - CF4 gas mixture. The lateral diffusion temperatures for these two gases (295 +/- 15 K and 297 +/- 6 K) were found to be in good agreement with room temperature. By contrast longitudinal diffusion temperature was found to be slightly elevated (319 +/- 10 (stat) +/- 8 (sys) K and 310 +/- 20 (stat) +/- 6 (sys) K) though given the errors, room temperature diffusion can not be ruled out. For lateral diffusion significant capture distances (0.21 +/- 0.07 mm and 0.15 +/- 0.03 mm) were measured while for longitudinal diffusion the results were not conclusive.

  8. LIQUIFIED NATURAL GAS (LNG CARRIERS

    Directory of Open Access Journals (Sweden)

    Daniel Posavec

    2010-12-01

    Full Text Available Modern liquefied natural gas carriers are double-bottom ships classified according to the type of LNG tank. The tanks are specially designed to store natural gas cooled to -161°C, the boiling point of methane. Since LNG is highly flammable, special care must be taken when designing and operating the ship. The development of LNG carriers has begun in the middle of the twentieth century. LNG carrier storage space has gradually grown to the current maximum of 260000 m3. There are more than 300 LNG carriers currently in operation (the paper is published in Croatian.

  9. High Human T Cell Leukemia Virus Type-1(HTLV-1 Provirus Load in Patients with HTLV-1 Carriers Complicated with HTLV-1-unrelated disorders

    Directory of Open Access Journals (Sweden)

    Yamada Yasuaki

    2010-04-01

    Full Text Available Abstract Background To address the clinical and virological significance of a high HTLV-1 proviral load (VL in practical blood samples from asymptomatic and symptomatic carriers, we simultaneously examined VL and clonal expansion status using polymerase chain reaction (PCR quantification (infected cell % of peripheral mononuclear cells and Southern blotting hybridization (SBH methods. Results The present study disclosed extremely high VL with highly dense smears with or without oligoclonal bands in SBH. A high VL of 10% or more was observed in 16 (43.2% of a total of 33 samples (one of 13 asymptomatic carriers, 8 of 12 symptomatic carriers, and 7 of 8 patients with lymphoma-type ATL without circulating ATL cells. In particular, an extremely high VL of 50% or more was limited to symptomatic carriers whose band findings always contained at least dense smears derived from polyclonally expanded cells infected with HTLV-1. Sequential samples revealed that the VL value was synchronized with the presence or absence of dense smears, and declined at the same time as disappearing dense smears. Dense smears transiently emerged at the active stage of the underlying disease. After disappearance of the smears, several clonal bands became visible and were persistently retained, explaining the process by which the clonality of HTLV-1-infected cells is established. The cases with only oligoclonal bands tended to maintain a stable VL of around 20% for a long time. Two of such cases developed ATL 4 and 3.5 years later, suggesting that a high VL with oligoclonal bands may be a predisposing risk to ATL. Conclusion The main contributor to extremely high VL seems to be transient emergence of dense smears detected by the sensitivity level of SBH, corresponding to polyclonal expansion of HTLV-1-infected cells including abundant small clones. Major clones retained after disappearance of dense smears stably persist and acquire various malignant characteristics step by

  10. A Network QoS Framework for Real-time Event Systems in highly Mobile Ad-hoc Environments

    Directory of Open Access Journals (Sweden)

    H.A. Duran-Limon

    2014-06-01

    Full Text Available A new class of applications can now be envisaged with the emergence of both mobile ad hoc computing and ubiquitous computing, which imposes a number of new unsolved challenges. Examples of such applications include automatic car control systems and air traffic control systems. Applications of such kind have real-time constraints and are characterised by being highly mobile and proactive, i.e. able to operate without human intervention. Moreover, this kind of applications requires multiple-source multicasting. However, current approaches mainly focus on offering support for continuous flows in low mobile environments where single-source multicasting is assumed. In this paper, we present the QoSMMANET (QoS Management in Mobile Ad hoc Networks framework, which offers QoS support for real-time event systems in highly mobile ad hoc environments. Our approach is validated by a number of experiments carried out in the ns-2 network simulator.

  11. Electrically detected electron spin resonance in a high-mobility silicon quantum well.

    Science.gov (United States)

    Matsunami, Junya; Ooya, Mitsuaki; Okamoto, Tohru

    2006-08-11

    The resistivity change due to electron spin resonance (ESR) absorption is investigated in a high-mobility two-dimensional electron system formed in a Si/SiGe heterostructure. Results for a specific Landau level configuration demonstrate that the primary cause of the ESR signal is a reduction of the spin polarization, not the effect of electron heating. The longitudinal spin relaxation time T1 is obtained to be of the order of 1 ms in an in-plane magnetic field of 3.55 T. The suppression of the effect of the Rashba fields due to high-frequency spin precession explains the very long T1.

  12. Distributed High Accuracy Peer-to-Peer Localization in Mobile Multipath Environments

    CERN Document Server

    Ekambaram, Venkatesan

    2010-01-01

    In this paper we consider the problem of high accuracy localization of mobile nodes in a multipath-rich environment where sub-meter accuracies are required. We employ a peer to peer framework where the vehicles/nodes can get pairwise multipath-degraded ranging estimates in local neighborhoods together with a fixed number of anchor nodes. The challenge is to overcome the multipath-barrier with redundancy in order to provide the desired accuracies especially under severe multipath conditions when the fraction of received signals corrupted by multipath is dominating. We invoke a message passing analytical framework based on particle filtering and reveal its high accuracy localization promise through simulations.

  13. Hydrogen carriers

    Science.gov (United States)

    He, Teng; Pachfule, Pradip; Wu, Hui; Xu, Qiang; Chen, Ping

    2016-12-01

    Hydrogen has the potential to be a major energy vector in a renewable and sustainable future energy mix. The efficient production, storage and delivery of hydrogen are key technical issues that require improvement before its potential can be realized. In this Review, we focus on recent advances in materials development for on-board hydrogen storage. We highlight the strategic design and optimization of hydrides of light-weight elements (for example, boron, nitrogen and carbon) and physisorbents (for example, metal-organic and covalent organic frameworks). Furthermore, hydrogen carriers (for example, NH3, CH3OH-H2O and cycloalkanes) for large-scale distribution and for on-site hydrogen generation are discussed with an emphasis on dehydrogenation catalysts.

  14. Ab initio theory of charge-carrier conduction in ultrapure organic crystals

    Science.gov (United States)

    Hannewald, K.; Bobbert, P. A.

    2004-08-01

    We present an ab initio description of charge-carrier mobilities in organic molecular crystals of high purity. Our approach is based on Holstein's original concept of small-polaron bands but generalized with respect to the inclusion of nonlocal electron-phonon coupling. By means of an explicit expression for the mobilities as a function of temperature in combination with ab initio calculations of the material parameters, we demonstrate the predictive power of our theory by applying it to naphthalene. The results show a good qualitative agreement with experiment and provide insight into the difference between electron and hole mobilities as well as their peculiar algebraic and anisotropic temperature dependencies.

  15. Carrier transport in amorphous silicon utilizing picosecond photoconductivity

    Science.gov (United States)

    Johnson, A. M.

    1981-08-01

    The development of a high-speed electronic measurement capability permitted the direct observation of the transient photoresponse of amorphous silicon (a-Si) with a time resolution of approximately 10ps. This technique was used to measure the initial mobility of photogenerated (2.1eV) free carriers in three types of a-Si having widely different densities of structural defects (i.e., as prepared by: (1) RF glow discharge (a-Si:H); (2) chemical vapor deposition; and (3) evaporation in ultra-high vacuum). In all three types of a-Si, the same initial mobility of approximately 1 cu cm/Vs at room temperature was found. This result tends to confirm the often-made suggestion that the free carrier mobility is determined by the influence of shallow states associated with the disorder in the random atomic network, and is an intrinsic property of a-Si which is unaffected by the method of preparation. The rate of decay of the photocurrent correlates with the density of structural defects and varies from 4ps to 200ps for the three types of a-Si investigated. The initial mobility of a-Si:H was found to be thermally activated. The possible application of extended state transport controlled by multiple trapping and small polaron formation is discussed.

  16. Quantum transport in high mobility AlGaN/GaN 2DEGs and nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Schmult, S.; Manfra, M.J.; Sergent, A.M.; Punnoose, A. [Bell Laboratories, Lucent Technologies, 600 Mountain Ave, Murray Hill, NJ 07974 (United States); Chou, H.T. [Department of Applied Physics, Stanford University, Stanford, CA 94305 (United States); Goldhaber-Gordon, D. [Department of Physics, Stanford University, Stanford, CA 94305 (United States); Molnar, R.J. [MIT Lincoln Laboratory, 244 Wood Street, Lexington, MA 02420 (United States)

    2006-06-15

    High mobility two-dimensional electron systems in GaN/AlGaN heterostructures have been realized by plasma assisted molecular beam epitaxy on GaN templates. In the density range of 10{sup 11} cm{sup -2} to 10{sup 12} cm{sup -2}, mobility values exceeding 160000 cm{sup 2}/Vs have been achieved. Scattering mechanisms that presently limit the production of higher mobility samples are discussed. We present results of a systematic study of the weak localization and antilocalization corrections to the classical conductivity at very low magnetic fields. The unambiguous observation of a conductivity maximum at B=0 suggests that spin-orbit scattering is not negligible in GaN heterostructures as one might expect for a wide-bandgap system. We have recently realized electron transport through GaN nanostructures. We report on the transport properties of the first quantum point contacts (QPCs) in GaN. These devices are used to study one-dimensional transport in the Nitride system. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. High-mobility capacitively-induced two-dimensional electrons in a lateral superlattice potential

    Science.gov (United States)

    Lu, T. M.; Laroche, D.; Huang, S.-H.; Chuang, Y.; Li, J.-Y.; Liu, C. W.

    2016-01-01

    In the presence of a lateral periodic potential modulation, two-dimensional electrons may exhibit interesting phenomena, such as a graphene-like energy-momentum dispersion, Bloch oscillations, or the Hofstadter butterfly band structure. To create a sufficiently strong potential modulation using conventional semiconductor heterostructures, aggressive device processing is often required, unfortunately resulting in strong disorder that masks the sought-after effects. Here, we report a novel fabrication process flow for imposing a strong lateral potential modulation onto a capacitively induced two-dimensional electron system, while preserving the host material quality. Using this process flow, the electron density in a patterned Si/SiGe heterostructure can be tuned over a wide range, from 4.4 × 1010 cm−2 to 1.8 × 1011 cm−2, with a peak mobility of 6.4 × 105 cm2/V·s. The wide density tunability and high electron mobility allow us to observe sequential emergence of commensurability oscillations as the density, the mobility, and in turn the mean free path, increase. Magnetic-field-periodic quantum oscillations associated with various closed orbits also emerge sequentially with increasing density. We show that, from the density dependence of the quantum oscillations, one can directly extract the steepness of the imposed superlattice potential. This result is then compared to a conventional lateral superlattice model potential. PMID:26865160

  18. A compact high-resolution X-ray ion mobility spectrometer

    Energy Technology Data Exchange (ETDEWEB)

    Reinecke, T.; Kirk, A. T.; Heptner, A.; Niebuhr, D.; Böttger, S.; Zimmermann, S. [Department of Sensors and Measurement Technology, Institute of Electrical Engineering and Measurement Technology, Leibniz Universität Hannover, Appelstr. 9A, 30167 Hannover (Germany)

    2016-05-15

    For the ionization of gaseous samples, most ion mobility spectrometers employ radioactive ionization sources, e.g., containing {sup 63}Ni or {sup 3}H. Besides legal restrictions, radioactive materials have the disadvantage of a constant radiation with predetermined intensity. In this work, we replaced the {sup 3}H source of our previously described high-resolution ion mobility spectrometer with 75 mm drift tube length with a commercially available X-ray source. It is shown that the current configuration maintains the resolving power of R = 100 which was reported for the original setup containing a {sup 3}H source. The main advantage of an X-ray source is that the intensity of the radiation can be adjusted by varying its operating parameters, i.e., filament current and acceleration voltage. At the expense of reduced resolving power, the sensitivity of the setup can be increased by increasing the activity of the source. Therefore, the performance of the setup can be adjusted to the specific requirements of any application. To investigate the relation between operating parameters of the X-Ray source and the performance of the ion mobility spectrometer, parametric studies of filament current and acceleration voltage are performed and the influence on resolving power, peak height, and noise is analyzed.

  19. High-Mobility Transistors Based on Large-Area and Highly Crystalline CVD-Grown MoSe2 Films on Insulating Substrates.

    Science.gov (United States)

    Rhyee, Jong-Soo; Kwon, Junyeon; Dak, Piyush; Kim, Jin Hee; Kim, Seung Min; Park, Jozeph; Hong, Young Ki; Song, Won Geun; Omkaram, Inturu; Alam, Muhammad A; Kim, Sunkook

    2016-03-23

    Large-area and highly crystalline CVD-grown multilayer MoSe2 films exhibit a well-defined crystal structure (2H phase) and large grains reaching several hundred micrometers. Multilayer MoSe2 transistors exhibit high mobility up to 121 cm(2) V(-1) s(-1) and excellent mechanical stability. These results suggest that high mobility materials will be indispensable for various future applications such as high-resolution displays and human-centric soft electronics.

  20. Construct validity of Comprehensive High-Level Activity Mobility Predictor (CHAMP for male servicemembers with traumatic lower-limb loss

    Directory of Open Access Journals (Sweden)

    Robert S. Gailey, PhD, PT

    2013-10-01

    Full Text Available This study examined the convergent construct validity of a new performance-based assessment instrument called the Comprehensive High-Level Activity Mobility Predictor (CHAMP as a measure of high-level mobility in servicemembers (SMs with traumatic lower-limb loss (LLL. The study was completed by 118 SMs. Convergent construct validity of the CHAMP was established using the 6-minute walk test (6MWT as a measure of overall mobility and physical function and the Amputee Mobility Predictor (AMP as a measure of basic prosthetic mobility. The known group methods construct validity examined disparities in high-level mobility capability among SMs with different levels of LLL. The CHAMP score demonstrated a strong positive relationship between 6MWT distance (r = 0.80, p < 0.001 and AMP score (r = 0.87, p < 0.001, respectively. In addition, the CHAMP can discriminate between different levels of LLL. Study findings support the CHAMP as a valid performance-based assessment instrument of high-level mobility for SMs with traumatic LLL.

  1. Trace level impurity method development with high-field asymmetric waveform ion mobility spectrometry: systematic study of factors affecting the performance.

    Science.gov (United States)

    Champarnaud, Elodie; Laures, Alice M-F; Borman, Phil J; Chatfield, Marion J; Kapron, James T; Harrison, Mark; Wolff, Jean-Claude

    2009-01-01

    For the determination of trace level impurities, analytical chemists are confronted with complex mixtures and difficult separations. New technologies such as high-field asymmetric waveform ion mobility spectrometry (FAIMS) have been developed to make their work easier; however, efficient method development and troubleshooting can be quite challenging if little prior knowledge of the factors or their settings is available. We present the results of an investigation performed in order to obtain a better understanding of the FAIMS technology. The influence of eight factors (polarity of dispersion voltage, outer bias voltage, total gas flow rate, composition of the carrier gas (e.g. %He), outer electrode temperature, ratio between the temperatures of the inner and outer electrodes, flow rate and composition of the make-up mobile phase) was assessed. Five types of responses were monitored: value of the compensation voltage (CV), intensity, width and asymmetry of the compensation voltage peak, and resolution between two peaks. Three types of studies were performed using different test mixtures and various ionisation modes to assess whether the same conclusions could be drawn across these conditions for a number of different types of compounds. To extract the maximum information from as few experiments as possible, a Design of Experiment (DoE) approach was used. The results presented in this work provide detailed information on the factors affecting FAIMS separations and therefore should enable the user to troubleshoot more effectively and to develop efficient methods.

  2. High-mobility n-type conjugated polymers based on electron-deficient tetraazabenzodifluoranthene diimide for organic electronics.

    Science.gov (United States)

    Li, Haiyan; Kim, Felix Sunjoo; Ren, Guoqiang; Jenekhe, Samson A

    2013-10-09

    High-mobility p-type and ambipolar conjugated polymers have been widely reported. However, high-mobility n-type conjugated polymers are still rare. Herein we present poly(tetraazabenzodifluoranthene diimide)s, PBFI-T and PBFI-BT, which exhibit a novel two-dimensional (2D) π-conjugation along the main chain and in the lateral direction, leading to high-mobility unipolar n-channel transport in field-effect transistors. The n-type polymers exhibit electron mobilities of up to 0.30 cm(2)/(V s), which is among the highest values for unipolar n-type conjugated polymers. Complementary inverters incorporating n-channel PBFI-T transistors produced nearly perfect switching characteristics with a high gain of 107.

  3. Reorientation of the high mobility plane in pentacene-based carbon nanotube enabled vertical field effect transistors.

    Science.gov (United States)

    McCarthy, Mitchell A; Liu, Bo; Jayaraman, Ramesh; Gilbert, Stephen M; Kim, Do Young; So, Franky; Rinzler, Andrew G

    2011-01-25

    The large current densities attained by carbon nanotube enabled vertical field effect transistors using crystalline organic channel materials are somewhat unexpected given the known large anisotropy in the mobility of crystalline organics and their conventional ordering on dielectric surfaces which tends to orient their high mobility axes parallel to the surface. This seeming contradiction is resolved by the finding that the nanotubes induce a molecular ordering that reorients the high mobility axes to favor current flow in a direction perpendicular to the substrate surface.

  4. High mobility AlGaN/GaN devices for β--dosimetry

    Science.gov (United States)

    Schmid, Martin; Howgate, John; Ruehm, Werner; Thalhammer, Stefan

    2016-05-01

    There is a high demand in modern medical applications for dosimetry sensors with a small footprint allowing for unobtrusive or high spatial resolution detectors. To this end we characterize the sensoric response of radiation resistant high mobility AlGaN/GaN semiconductor devices when exposed to β--emitters. The samples were operated as a floating gate transistor, without a field effect gate electrode, thus excluding any spurious effects from β--particle interactions with a metallic surface covering. We demonstrate that the source-drain current is modulated in dependence on the kinetic energy of the incident β--particles. Here, the signal is shown to have a linear dependence on the absorbed energy calculated from Monte Carlo simulations. Additionally, a stable and reproducible sensor performance as a β--dose monitor is shown for individual radioisotopes. Our experimental findings and the characteristics of the AlGaN/GaN high mobility layered devices indicate their potential for future applications where small sensor size is necessary, like for instance brachytherapy.

  5. High mobility AlGaN/GaN devices for β{sup −}-dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Schmid, Martin; Howgate, John; Ruehm, Werner [Helmholtz Zentrum München, Ingolstädter Landstraße 1, 85764 Neuherberg (Germany); Thalhammer, Stefan, E-mail: stefan.thalhammer@physik.uni-augsburg.de [Universität Augsburg, Universitätsstraße 1, 86159 Augsburg (Germany)

    2016-05-21

    There is a high demand in modern medical applications for dosimetry sensors with a small footprint allowing for unobtrusive or high spatial resolution detectors. To this end we characterize the sensoric response of radiation resistant high mobility AlGaN/GaN semiconductor devices when exposed to β{sup −}-emitters. The samples were operated as a floating gate transistor, without a field effect gate electrode, thus excluding any spurious effects from β{sup −}-particle interactions with a metallic surface covering. We demonstrate that the source–drain current is modulated in dependence on the kinetic energy of the incident β{sup −}-particles. Here, the signal is shown to have a linear dependence on the absorbed energy calculated from Monte Carlo simulations. Additionally, a stable and reproducible sensor performance as a β{sup −}-dose monitor is shown for individual radioisotopes. Our experimental findings and the characteristics of the AlGaN/GaN high mobility layered devices indicate their potential for future applications where small sensor size is necessary, like for instance brachytherapy.

  6. Plasma high-mobility group box 1 levels predict mortality after ST-segment elevation myocardial infarction

    DEFF Research Database (Denmark)

    Sørensen, Morten V; Pedersen, Sune; Møgelvang, Rasmus

    2011-01-01

    We evaluated the potential association between plasma high-mobility group box 1 (HMGB1) levels and outcome in patients with ST-segment elevation myocardial infarction (STEMI) treated with primary percutaneous coronary intervention.......We evaluated the potential association between plasma high-mobility group box 1 (HMGB1) levels and outcome in patients with ST-segment elevation myocardial infarction (STEMI) treated with primary percutaneous coronary intervention....

  7. Raising awareness of carrier testing for hereditary haemoglobinopathies in high-risk ethnic groups in the Netherlands: a pilot study among the general public and primary care providers

    Directory of Open Access Journals (Sweden)

    Cornel Martina C

    2009-09-01

    Full Text Available Abstract Background In the Netherlands no formal recommendations exist concerning preconceptional or antenatal testing for carriership of hereditary haemoglobinopathies. Those at highest risk may be unaware of the possibility of carrier screening. While universal newborn screening has recently been introduced, neither preconceptional nor antenatal carrier testing is routinely offered by health care services to the general public. A municipal health service and a foundation for public information on medical genetics undertook a pilot project with the aim of increasing knowledge and encouraging informed choice. Two groups were targeted: members of the public from ethnic groups at increased risk, and primary health care providers. This study examines the effectiveness of culturally specific 'infotainment' to inform high-risk ethnic groups about their increased risk for haemoglobinopathies. In addition, the study explores attitudes and intentions of primary care providers towards haemoglobinopathy carrier testing of their patients from high-risk ethnic groups. Methods Informational sessions tailored to the public or professionals were organised in Amsterdam, and evaluated for their effect. Psychological parameters were measured using structured questionnaires based on the Theory of Planned Behaviour. Results The pre-test/post-test questionnaire showed that members of the public gained understanding of inheritance and carriership of haemoglobinopathies from the "infotainment" session (p Conclusion The "infotainment" programme may have a positive effect on people from high-risk groups, but informed general practitioners and midwives were reluctant to facilitate their patients' getting tested. Additional initiatives are needed to motivate primary care providers to facilitate haemoglobinopathy carrier testing for their patients from high-risk backgrounds.

  8. N-polar GaN epitaxy and high electron mobility transistors

    Science.gov (United States)

    Hoi Wong, Man; Keller, Stacia; Nidhi; Dasgupta, Sansaptak; Denninghoff, Daniel J.; Kolluri, Seshadri; Brown, David F.; Lu, Jing; Fichtenbaum, Nicholas A.; Ahmadi, Elaheh; Singisetti, Uttam; Chini, Alessandro; Rajan, Siddharth; DenBaars, Steven P.; Speck, James S.; Mishra, Umesh K.

    2013-07-01

    This paper reviews the progress of N-polar (000\\mathop 1\\limits^\\_) GaN high frequency electronics that aims at addressing the device scaling challenges faced by GaN high electron mobility transistors (HEMTs) for radio-frequency and mixed-signal applications. Device quality (Al, In, Ga)N materials for N-polar heterostructures are developed using molecular beam epitaxy and metalorganic chemical vapor deposition. The principles of polarization engineering for designing N-polar HEMT structures will be outlined. The performance, scaling behavior and challenges of microwave power devices as well as highly-scaled depletion- and enhancement-mode devices employing advanced technologies including self-aligned processes, n+ (In,Ga)N ohmic contact regrowth and high aspect ratio T-gates will be discussed. Recent research results on integrating N-polar GaN with Si for prospective novel applications will also be summarized.

  9. Plasmon-terahertz photon interaction in high-electron-mobility heterostructures

    Science.gov (United States)

    Łusakowski, Jerzy

    2017-01-01

    Terahertz (THz) radiation couples to a two-dimensional electron plasma in high-electron-mobility heterostructures which allows one to study fundamental properties of this electron system and construct plasma-based devices. This article reviews some of the recent results of theoretical and experimental studies on plasmon-THz photon interaction. In particular, plasma dispersion relations, mechanisms of THz-field rectification and ultrastrong light-matter coupling are discussed in conventional structures based on GaAs and CdTe and new materials—graphene and black phosphorus.

  10. Extraction of terahertz emission from a grating-coupled high-electron-mobility transistor

    Institute of Scientific and Technical Information of China (English)

    Zhou Yu; Li Xinxing; Tan Renbing; Xue Wei; Huang Yongdan; Lou Shitao; Zhang Baoshun; Qin Hua

    2013-01-01

    In a grating-coupled high-electron-mobility transistor,weak terahertz emission with wavelength around 400μm was observed by using a Fourier-transform spectrometer.The absolute terahertz emission power was extracted from a strong background blackbody emission by using a modulation technique.The power of terahertz emission is proportional to the drain-source current,while the power of blackbody emission has a distinct relation with the electrical power.The dependence on the drain-source bias and the gate voltage suggests that the terahertz emission is induced by accelerated electrons interacting with the grating.

  11. High-Mobility Ambipolar Organic Thin-Film Transistor Processed From a Nonchlorinated Solvent.

    Science.gov (United States)

    Sonar, Prashant; Chang, Jingjing; Kim, Jae H; Ong, Kok-Haw; Gann, Eliot; Manzhos, Sergei; Wu, Jishan; McNeill, Christopher R

    2016-09-21

    Polymer semiconductor PDPPF-DFT, which combines furan-substituted diketopyrrolopyrrole (DPP) and a 3,4-difluorothiophene base, has been designed and synthesized. PDPPF-DFT polymer semiconductor thin film processed from nonchlorinated hexane is used as an active layer in thin-film transistors. As a result, balanced hole and electron mobilities of 0.26 and 0.12 cm(2)/(V s) are achieved for PDPPF-DFT. This is the first report of using nonchlorinated hexane solvent for fabricating high-performance ambipolar thin-film transistor devices.

  12. Characterization methodology for pseudomorphic high electron mobility transistors using surface photovoltage spectroscopy

    Science.gov (United States)

    Solodky, S.; Leibovitch, M.; Ashkenasy, N.; Hallakoun, I.; Rosenwaks, Y.; Shapira, Yoram

    2000-12-01

    Pseudomorphic high electron mobility transistor structures have been characterized using surface photovoltage spectroscopy and numerical simulations. According to the effect of the electric fields in different regions of the device on the surface photovoltage spectra, a simple empirical model that correlates the spectral parameters and electrical parameters of the structure has been developed. The spectra and their analysis are shown to provide values for the electrical parameters of the structure. The sensitivity of the technique to the device electrical parameters is shown by three different examples. In these examples, the differences in doping level and surface charge have been monitored as well as the nonuniformity of doping level across the wafer.

  13. SEMICONDUCTOR PHYSICS: Phonon-induced magnetoresistance oscillations in a high-mobility quantum well

    Science.gov (United States)

    Qisheng, Zhou; Juncheng, Cao; Ming, Qi; Xiaolin, Lei

    2010-09-01

    We examine the temperature dependence of acoustic-phonon-induced magnetoresistance oscillations in a high-mobility GaAs-based quantum well with conventional transverse and longitudinal phonon modes, using a model in which the temperature increase of the Landau level broadening or the single-particle scattering rate 1/τs is attributed to the enhancement of electron-phonon scattering with rising temperature. The non-monotonic temperature behavior, showing an optimal temperature at which a given order of oscillation amplitude exhibits a maximum and the shift of the main resistance peak to higher magnetic field with rising temperature, is produced, in agreement with recent experimental findings.

  14. 75 FR 32984 - Policy on the Retention of Supporting Documents and the Use of Electronic Mobile Communication...

    Science.gov (United States)

    2010-06-10

    ... Electronic Mobile Communication/Tracking Technology in Assessing Motor Carriers' and Commercial Motor Vehicle... electronic mobile communication/ tracking technology in assessing motor carriers' and commercial motor... (GPS) or other electronic mobile communication/tracking technology during the ordinary course of...

  15. Investigations of high mobility single crystal chemical vapor deposition diamond for radiotherapy photon beam monitoring

    Science.gov (United States)

    Tromson, D.; Descamps, C.; Tranchant, N.; Bergonzo, P.; Nesladek, M.; Isambert, A.

    2008-03-01

    The intrinsic properties of diamond make this material theoretically very suitable for applications in medical physics. Until now ionization chambers have been fabricated from natural stones and are commercialized by PTW, but their fairly high costs and long delivery times have often limited their use in hospital. The properties of commercialized intrinsic polycrystalline diamond were investigated in the past by many groups. The results were not completely satisfactory due to the nature of the polycrystalline material itself. In contrast, the recent progresses in the growth of high mobility single crystal synthetic diamonds prepared by chemical vapor deposition (CVD) technique offer new alternatives. In the framework of the MAESTRO project (Methods and Advanced Treatments and Simulations for Radio Oncology), the CEA-LIST is studying the potentialities of synthetic diamond for new techniques of irradiation such as intensity modulated radiation therapy. In this paper, we present the growth and characteristics of single crystal diamond prepared at CEA-LIST in the framework of the NoRHDia project (Novel Radiation Hard CVD Diamond Detector for Hadrons Physics), as well as the investigations of high mobility single crystal CVD diamond for radiotherapy photon beam monitoring: dosimetric analysis performed with the single crystal diamond detector in terms of stability and repeatability of the response signal, signal to noise ratio, response speed, linearity of the signal versus the absorbed dose, and dose rate. The measurements performed with photon beams using radiotherapy facilities demonstrate that single crystal CVD diamond is a good alternative for air ionization chambers for beam quality control.

  16. GaN High-Electron-Mobility Transistor with WN x /Cu Gate for High-Power Applications

    Science.gov (United States)

    Hsieh, Ting-En; Lin, Yueh-Chin; Li, Fang-Ming; Shi, Wang-Cheng; Huang, Yu-Xiang; Lan, Wei-Cheng; Chin, Ping-Chieh; Chang, Edward Yi

    2015-12-01

    A GaN high-electron-mobility transistor (HEMT) with WN x /Cu gate for high-power applications has been investigated. The direct-current (DC) characteristics of the device are comparable to those of conventional Ni/Au-gated GaN HEMTs. The results of high-voltage stress testing indicate that the device is stable after application of 200 V stress for 42 h. The WN x /Cu-gated GaN HEMT exhibited no obvious changes in the DC characteristics or Schottky barrier height before and after annealing at 250°C for 1 h. These results demonstrate that the WN x /Cu gate structure can be used in a GaN HEMT for high-power applications with good thermal stability.

  17. Material simulation of charge carrier transport properties of polymer dielectrics

    Science.gov (United States)

    Unge, Mikael; Christen, Thomas; Törnkvist, Christer; ABB Corporate Research Team

    To understand electron and hole transport in solid material requires to know its electronic properties, i.e. the density of states (DOS) and whether the states are spatially localized or delocalized. The states closest to the band edges may be localized, states further away can be delocalized. This transition from localized to delocalized states determines the mobility edge, above the mobility edge the mobility is expected to be high. A real polymer is never perfect; it contains a number of oxidative states, bonding defects and molecular impurities. These imperfections yield electronic states that can appear in the band gap of the polymer, traps. Traps can be shallow, i.e. close to the band edges, from these states the charge carrier easily can jump to a state in the band edge or another shallow state. Other traps can be deep, in these states it is likely that the charge carrier remains and become immobile. All these properties related to the electronic structure of the polymer, including its defects, affects the conductivity of the polymer. Linear scaling Density Functional Theory has been applied to calculate electronic structure of amorphous polyethylene. In particular DOS, trap levels and mobility edges are studied.

  18. Charge transport in disordered organic host-guest systems: effects of carrier density and electric field

    Energy Technology Data Exchange (ETDEWEB)

    Yimer, Y Y; Bobbert, P A [Group Polymer Physics, Eindhoven Polymer Laboratories and Dutch Polymer Institute, 5600 MB Eindhoven (Netherlands); Coehoorn, R [Department of Applied Physics, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven (Netherlands)], E-mail: Y.Y.Yimer@tue.nl

    2008-08-20

    We investigate charge transport in disordered organic host-guest systems with a bimodal Gaussian density of states (DOS). The energy difference between the two Gaussians defines the trap depth. By solving the Pauli master equation for the hopping of charge carriers on a regular lattice with site energies randomly drawn from the DOS, we obtain the dependence of the charge-carrier mobility on the relative guest concentration, the trap depth, the energetic disorder, the charge-carrier density and the electric field. At small and high guest concentrations, our work provides support for recent semi-analytical model results on the dependence of the mobility on the charge-carrier density at zero field. However, at the cross-over between the trap-limited and trap-to-trap hopping regimes, where the mobility attains a minimum, our results can almost be one order of magnitude larger than predicted semi-analytically. Furthermore, it is shown that field-induced detrapping can contribute strongly to the electric-field dependence of the mobility. A simple analytical expression is provided which describes the effect. This result can be used in continuum drift-diffusion models for charge transport in devices such as organic light-emitting diodes.

  19. Charge transport in disordered organic host guest systems: effects of carrier density and electric field

    Science.gov (United States)

    Yimer, Y. Y.; Bobbert, P. A.; Coehoorn, R.

    2008-08-01

    We investigate charge transport in disordered organic host-guest systems with a bimodal Gaussian density of states (DOS). The energy difference between the two Gaussians defines the trap depth. By solving the Pauli master equation for the hopping of charge carriers on a regular lattice with site energies randomly drawn from the DOS, we obtain the dependence of the charge-carrier mobility on the relative guest concentration, the trap depth, the energetic disorder, the charge-carrier density and the electric field. At small and high guest concentrations, our work provides support for recent semi-analytical model results on the dependence of the mobility on the charge-carrier density at zero field. However, at the cross-over between the trap-limited and trap-to-trap hopping regimes, where the mobility attains a minimum, our results can almost be one order of magnitude larger than predicted semi-analytically. Furthermore, it is shown that field-induced detrapping can contribute strongly to the electric-field dependence of the mobility. A simple analytical expression is provided which describes the effect. This result can be used in continuum drift-diffusion models for charge transport in devices such as organic light-emitting diodes.

  20. A fast draw. Analysis of a level playing field for a high-speed line and low cost carriers; Snel naar gelijk spel. Aanzet tot analyse van een gelijk speelveld voor hoge snelheidslijn en low cost carriers

    Energy Technology Data Exchange (ETDEWEB)

    Van Essen, H.P.; Warringa, G.E.A.; Boon, B.H.

    2004-11-01

    For several lines in Europe Low Cost Carriers (LCCs) are considered as competitive means of transportation for high-speed lines (HSL in Dutch). A desk study has been carried out to gain insight in marginal external costs and levies of LCCs and HSLs in the Netherlands. The results can contribute to the discussion on a level playing field in this sector. Also an overview is given of other costs and levies. [Dutch] Low Cost Carriers (LCC's) worden op verschillende trajecten in Europa nogal eens beschouwd als concurrenten van de hoge snelheidslijnen (HSL). Om inzicht te verkrijgen in de externe kosten van LCC's en HSL en daarmee een bijdrage te leveren aan de discussie over een gelijk speelveld ('level playing field') heeft CE in opdracht van het Ministerie van Verkeer en Waterstaat DG Luchtvaart een deskstudie uitgevoerd naar de marginale externe kosten en heffingen van LCC's en HSL in Nederland. Daarnaast is een globale inventarisatie gemaakt van de overige kosten en heffingen. Tegenover de meeste externe kostenposten staat geen noemenswaardige heffing om de kosten te internaliseren,met als enige uitzondering geluidsoverlast door het vliegtuig. Dit betekent dat in het algemeen er te weinig rekening wordt gehouden met de externe effecten die zowel de HSL als het vliegtuig veroorzaken. Deze studie vormt een eerste aanzet tot een antwoord op de vraag naar een gelijk speelveld en rechtvaardigt geen definitief oordeel. Voor een eerlijke vergelijking tussen HSL en LCC dienen naast de externe kosten, in het bijzonder de kosten, afschrijvingen en overdrachten van bestaande luchtvaart- en HSL-infrastructuur en verschillende vormen van directe en indirecte overheidssteun nader te worden onderzocht.

  1. GaAs/AlGaAs nanoheterostructures: simulation and application on high mobility transistors

    Directory of Open Access Journals (Sweden)

    Eduardo Martín Rodríguez

    2011-01-01

    Full Text Available  This work analyses the features of GaAs/AlGaAs heterostructure, highlighting semiconductor junction properties. Charge confinement was produced when two materials having different band-gap were fixed; such high electron concentration is called two-dimensional electron gas (2DEG. Device simulation for smart integrated systems (DESSIS is simulation software which uses physical models and robust numerical methods for simulating semiconductor devices and 3-5 element heterostructures. Results for different heterostructure doping profiles and voltages are presented in this work.  High electron mobility transistors (HEMTs are one of the most important applications for heterostructures; they work on 30 to 300 GHz frequency ranges. These transistors are simulated in this work; a 1 A/mm2 high current density was obtained in the channel, such value being comparable to other values reported for similar transistors.  

  2. Charge-carrier dynamics in hybrid metal halide perovskites (Conference Presentation)

    Science.gov (United States)

    Milot, Rebecca L.; Rehman, Waqaas; Eperon, Giles E.; Snaith, Henry J.; Johnston, Michael B.; Herz, Laura M.

    2016-09-01

    Hybrid metal halide perovskites are attractive components for many optoelectronic applications due to a combination of their superior charge transport properties and relative ease of fabrication. A complete understanding of the nature of charge transport in these materials is therefore essential for current and future device development. We have evaluated two systems - the standard perovskite methylammonium lead triiodide (CH3NH3PbI3) and a series of mixed-iodide/bromide formamidinium lead perovskites - in an effort to determine what effect structural and chemical composition have on optoelectronic properties including mobility, charge-carrier recombination dynamics, and charge-carrier diffusion length. The photoconductivity in thin films of CH3NH3PbI3was investigated from 8 K to 370 K across three structural phases [1]. While the monomolecular charge-carrier recombination rate was found to increase with rising temperature indicating a mechanism dominated by ionized impurity mediated recombination, the bimolecular rate constant decreased with rising temperature as charge-carrier mobility declined. The Auger rate constant was highly phase specific, suggesting a strong dependence on electronic band structure. For the mixed-halide formamidinuim lead bromide-iodide perovskites, HC(NH2)2Pb(BryI1-y)3, bimolecular and Auger charge-carrier recombination rate constants strongly correlated with bromide content, which indicated a link with electronic structure [2]. Although HC(NH2)2PbBr3 and HC(NH2)2PbI3 exhibited high charge-carrier mobilities and diffusion lengths exceeding 1 μm, mobilities for mixed Br/I perovskites were all lower as a result of crystalline phase disorder.

  3. Estimation of free carrier concentrations in high-quality heavily doped GaN:Si micro-rods by photoluminescence and Raman spectroscopy

    Science.gov (United States)

    Mohajerani, M. S.; Khachadorian, S.; Nenstiel, C.; Schimpke, T.; Avramescu, A.; Strassburg, M.; Hoffmann, A.; Waag, A.

    2016-03-01

    The controlled growth of highly n-doped GaN micro rods is one of the major challenges in the fabrication of recently developed three-dimensional (3D) core-shell light emitting diodes (LEDs). In such structures with a large active area, higher electrical conductivity is needed to achieve higher current density. In this contribution, we introduce high quality heavily-doped GaN:Si micro-rods which are key elements of the newly developed 3D core-shell LEDs. These structures were grown by metal-organic vapor phase epitaxy (MOVPE) using selective area growth (SAG). We employed spatially resolved micro-Raman and micro-photoluminescence (PL) in order to directly determine a free-carrier concentration profile in individual GaN micro-rods. By Raman spectroscopy, we analyze the low-frequency branch of the longitudinal optical (LO)-phonon-plasmon coupled modes and estimate free carrier concentrations from ≍ 2.4 × 1019 cm-3 up to ≍ 1.5 × 1020 cm-3. Furthermore, free carrier concentrations are determined by estimating Fermi energy level from the near band edge emission measured by low-temperature PL. The results from both methods reveal a good consistency.

  4. Effect of p-GaN layer grown with H2 carrier gas on wall-plug efficiency of high-power LEDs

    Science.gov (United States)

    Lu, Kuan Fu; Lin, Tien Kun; Liou, Jian Kai; Yang, Chyi Da; Lee, Chong Yi; Tsai, Jeng Da

    2017-06-01

    The effect of employing different carrier gases (H2 only and 1:1 vol% N2:H2) in the p-type GaN (p-GaN) layer on the wall-plug efficiency (WPE) of high-power light-emitting diodes (LEDs) is studied. Since GaN crystal could be a two-dimension (2-D) growth mode in H2 ambient, better quality and smoother surface of the p-GaN were obtained. The current spreading performance of the p-GaN layer using H2 alone as the carrier gas was enhanced, resulting in advanced light output power (LOP). In addition, turn-on voltage and dynamic resistance at 500 mA, which can strongly contribute to the WPE, were also reduced by 0.12 V and 0.13 Ω, respectively. The studied device with H2 as the carrier gas in the p-GaN layer (p-H2 layer) exhibits 9.5% and 12.4% improvements in LOP and WPE at 500 mA over the device (N2/H2 = 1:1), as well as significantly better electrostatic discharge robustness. Therefore, the use of a p-H2 layer can effectively improve the performance of GaN-based LEDs for high power applications.

  5. Efficient conversion of high concentration of glycerol to Monacolin K by solid-state fermentation of Monascus purpureus using bagasse as carrier.

    Science.gov (United States)

    Lu, Li-Ping; Zhang, Bo-Bo; Xu, Gan-Rong

    2013-03-01

    High concentration of glycerol was used as the sole carbon source for efficient production of Monacolin K (MK) by solid-state fermentation (SSF) of Monascus purpureus 9901 using agricultural residue (bagasse), as an inert carrier. A comparative study showed that MK production in SSF was about 5.5 times higher than that of submerged fermentation when 26 % of glycerol was used, which may be due to the formation of glycerol concentration gradients in the inert carrier and less catabolite repression in SSF. For enhancement of MK yield in SSF, the effects of different influential variables, such as glycerol concentration, nitrogen source and its concentration, initial moisture content, inoculum size and particle size of bagasse, were systematically examined. All the factors mentioned above had an effect on the MK production in SSF to some extent. The maximal yield of MK (12.9 mg/g) was achieved with 26 % glycerol, 5 % soybean meal, 51 % initial moisture content, 20 % inoculum size and 1 mm particle size of bagasse. The results in this study may expand our understanding on the application of SSF using agricultural residue as carrier for production of useful microbial metabolites, especially the efficient conversion of high concentration of glycerol to MK by Monascus purpureus.

  6. P-doping-free III-nitride high electron mobility light-emitting diodes and transistors

    Energy Technology Data Exchange (ETDEWEB)

    Li, Baikui; Tang, Xi; Chen, Kevin J., E-mail: eekjchen@ust.hk [Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong); Wang, Jiannong [Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

    2014-07-21

    We report that a simple metal-AlGaN/GaN Schottky diode is capable of producing GaN band-edge ultraviolet emission at 3.4 eV at a small forward bias larger than ∼2 V at room temperature. Based on the surface states distribution of AlGaN, a mature impact-ionization-induced Fermi-level de-pinning model is proposed to explain the underlying mechanism of the electroluminescence (EL) process. By experimenting with different Schottky metals, Ni/Au and Pt/Au, we demonstrated that this EL phenomenon is a “universal” property of metal-AlGaN/GaN Schottky diodes. Since this light-emitting Schottky diode shares the same active structure and fabrication processes as the AlGaN/GaN high electron mobility transistors, straight-forward and seamless integration of photonic and electronic functional devices has been demonstrated on doping-free III-nitride heterostructures. Using a semitransparent Schottky drain electrode, an AlGaN/GaN high electron mobility light-emitting transistor is demonstrated.

  7. Inkjet printed, high mobility inorganic-oxide field effect transistors processed at room temperature.

    Science.gov (United States)

    Dasgupta, Subho; Kruk, Robert; Mechau, Norman; Hahn, Horst

    2011-12-27

    Printed electronics (PE) represents any electronic devices, components or circuits that can be processed using modern-day printing techniques. Field-effect transistors (FETs) and logics are being printed with intended applications requiring simple circuitry on large, flexible (e.g., polymer) substrates for low-cost and disposable electronics. Although organic materials have commonly been chosen for their easy printability and low temperature processability, high quality inorganic oxide-semiconductors are also being considered recently. The intrinsic mobility of the inorganic semiconductors are always by far superior than the organic ones; however, the commonly expressed reservations against the inorganic-based printed electronics are due to major issues, such as high processing temperatures and their incompatibility with solution-processing. Here we show a possibility to circumvent these difficulties and demonstrate a room-temperature processed and inkjet printed inorganic-oxide FET where the transistor channel is composed of an interconnected nanoparticle network and a solid polymer electrolyte serves as the dielectric. Even an extremely conservative estimation of the field-effect mobility of such a device yields a value of 0.8 cm(2)/(V s), which is still exceptionally large for a room temperature processed and printed transistor from inorganic materials.

  8. Water mobility in the endosperm of high beta-glucan barley mutants as studied by nuclear magnetic resonance imaging

    DEFF Research Database (Denmark)

    Seefeldt, Helene Fast; van den Berg, Frans; Klöckenberger, Walter

    2007-01-01

    1H NMR imaging (MRI) was used as a noninvasive technique to study water distribution and mobility in hydrated barley (Hordeum vulgare L.) seeds of accessions with varying content of beta glucan (BG), a highly hygroscopic cell wall component. High contents of BG in barley are unfavorable in malting...... were related to content and location of BG. Water mobility was investigated by following the rate and mode of desiccation in hydrated single seeds. In order to determine the different water components, a multispin echo experiment was set up to reveal the T2 transverse relaxation rates of water within...... desiccation. The embryo retained water even after 36 h of drying, whereas the endosperm showed low and heterogeneous mobility of the water after drying. The relaxation time constants indicated that the BG mutants had regions of much higher water mobility around the ventral crease compared to the control...

  9. Achieving high mobility ZnO : Al at very high growth rates by dc filtered cathodic arc deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mendelsberg, R J; Lim, S H N; Wallig, J; Anders, A [Lawrence Berkeley National Laboratory, Plasma Applications Group, Berkeley, CA (United States); Zhu, Y K [Harbin Institute of Technology, Harbin (China); Milliron, D J, E-mail: aanders@lbl.gov [Lawrence Berkeley National Laboratory, Molecular Foundry, Berkeley, CA (United States)

    2011-06-15

    Achieving a high growth rate is paramount for making large-area transparent conducting oxide coatings at a low cost. Unfortunately, the quality of thin films grown by most techniques degrades as the growth rate increases. Filtered dc cathodic arc is a lesser known technique which produces a stream of highly ionized plasma, in stark contrast to the neutral atoms produced by standard sputter sources. Ions bring a large amount of potential energy to the growing surface which is in the form of heat, not momentum. By minimizing the distance from cathode to substrate, the high ion flux gives a very high effective growth temperature near the film surface without causing damage from bombardment. The high surface temperature is a direct consequence of the high growth rate and allows for high-quality crystal growth. Using this technique, 500-1300 nm thick and highly transparent ZnO : Al films were grown on glass at rates exceeding 250 nm min{sup -1} while maintaining resistivity below 5 x 10{sup -4} {Omega} cm with electron mobility as high as 60 cm{sup 2} V{sup -1} s{sup -1}. (fast track communication)

  10. Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors.

    Science.gov (United States)

    Kim, Hyun-Suk; Jeon, Sang Ho; Park, Joon Seok; Kim, Tae Sang; Son, Kyoung Seok; Seon, Jong-Baek; Seo, Seok-Jun; Kim, Sun-Jae; Lee, Eunha; Chung, Jae Gwan; Lee, Hyungik; Han, Seungwu; Ryu, Myungkwan; Lee, Sang Yoon; Kim, Kinam

    2013-01-01

    Ultra-definition, large-area displays with three-dimensional visual effects represent megatrend in the current/future display industry. On the hardware level, such a "dream" display requires faster pixel switching and higher driving current, which in turn necessitate thin-film transistors (TFTs) with high mobility. Amorphous oxide semiconductors (AOS) such as In-Ga-Zn-O are poised to enable such TFTs, but the trade-off between device performance and stability under illumination critically limits their usability, which is related to the hampered electron-hole recombination caused by the oxygen vacancies. Here we have improved the illumination stability by substituting oxygen with nitrogen in ZnO, which may deactivate oxygen vacancies by raising valence bands above the defect levels. Indeed, the stability under illumination and electrical bias is superior to that of previous AOS-based TFTs. By achieving both mobility and stability, it is highly expected that the present ZnON TFTs will be extensively deployed in next-generation flat-panel displays.

  11. Patient-Facing Mobile Apps to Treat High-Need, High-Cost Populations: A Scoping Review.

    Science.gov (United States)

    Singh, Karandeep; Drouin, Kaitlin; Newmark, Lisa P; Filkins, Malina; Silvers, Elizabeth; Bain, Paul A; Zulman, Donna M; Lee, Jae-Ho; Rozenblum, Ronen; Pabo, Erika; Landman, Adam; Klinger, Elissa V; Bates, David W

    2016-12-19

    Self-management is essential to caring for high-need, high-cost (HNHC) populations. Advances in mobile phone technology coupled with increased availability and adoption of health-focused mobile apps have made self-management more achievable, but the extent and quality of the literature supporting their use is not well defined. The purpose of this review was to assess the breadth, quality, bias, and types of outcomes measured in the literature supporting the use of apps targeting HNHC populations. Data sources included articles in PubMed and MEDLINE (National Center for Biotechnology Information), EMBASE (Elsevier), the Cochrane Central Register of Controlled Trials (EBSCO), Web of Science (Thomson Reuters), and the NTIS (National Technical Information Service) Bibliographic Database (EBSCO) published since 2008. We selected studies involving use of patient-facing iOS or Android mobile health apps. Extraction was performed by 1 reviewer; 40 randomly selected articles were evaluated by 2 reviewers to assess agreement. Our final analysis included 175 studies. The populations most commonly targeted by apps included patients with obesity, physical handicaps, diabetes, older age, and dementia. Only 30.3% (53/175) of the apps studied in the reviewed literature were identifiable and available to the public through app stores. Many of the studies were cross-sectional analyses (42.9%, 75/175), small (median number of participants=31, interquartile range 11.0-207.2, maximum 11,690), or performed by an app's developers (61.1%, 107/175). Of the 175 studies, only 36 (20.6%, 36/175) studies evaluated a clinical outcome. Most apps described in the literature could not be located on the iOS or Android app stores, and existing research does not robustly evaluate the potential of mobile apps. Whereas apps may be useful in patients with chronic conditions, data do not support this yet. Although we had 2-3 reviewers to screen and assess abstract eligibility, only 1 reviewer abstracted

  12. Gate-tunable high mobility remote-doped InSb/In1−xAlxSb quantum well

    NARCIS (Netherlands)

    Yi, W.; Kiselev, A.A.; Thorp, J.; Noah, R.; Nguyen, B.M.; Bui, S.; Rajavel, R.D.; Hussain, T.; Gyure, M.F.; Kratz, P.; Qian, Q.; Manfra, M.J.; Pribiag, V.S.; Kouwenhoven, L.P.; Marcus, C.M.; Sokolich, M.

    2015-01-01

    Gate-tunable high-mobility InSb/In1−xAlxSb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200 000 cm2/V s is measured at T = 1.8 K. In asymmetrically remote-doped samples with an HfO2 gate dielectric formed by atomi

  13. Mobile Phone Use in a Pennsylvania Public High School: Does Policy Inform Practice?

    Science.gov (United States)

    Thackara, Susan Tomchak

    2014-01-01

    Though many American educators embrace technology in classrooms, administrators can create policies that inhibit technology such as mobile phone use in classrooms or on district property. These policies range from restrictive with no mobile phone use permitted, to liberal in which unrestricted use of mobile phones is allowed. The purpose of this…

  14. Mobile Phone Use in a Pennsylvania Public High School: Does Policy Inform Practice?

    Science.gov (United States)

    Thackara, Susan Tomchak

    2014-01-01

    Though many American educators embrace technology in classrooms, administrators can create policies that inhibit technology such as mobile phone use in classrooms or on district property. These policies range from restrictive with no mobile phone use permitted, to liberal in which unrestricted use of mobile phones is allowed. The purpose of this…

  15. Applications of Admittance Spectroscopy in Photovoltaic Devices Beyond Majority Carrier Trapping Defects: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Li, J. V.; Crandall, R. S.; Repins, I. L.; Nardes, A. M.; Levi, D. H.; Sulima, O.

    2011-07-01

    Admittance spectroscopy is commonly used to characterize majority-carrier trapping defects. In today's practical photovoltaic devices, however, a number of other physical mechanisms may contribute to the admittance measurement and interfere with the data interpretation. Such challenges arise due to the violation of basic assumptions of conventional admittance spectroscopy such as single-junction, ohmic contact, highly conductive absorbers, and measurement in reverse bias. We exploit such violations to devise admittance spectroscopy-based methods for studying the respective origins of 'interference': majority-carrier mobility, non-ohmic contact potential barrier, minority-carrier inversion at hetero-interface, and minority-carrier lifetime in a device environment. These methods are applied to a variety of photovoltaic technologies: CdTe, Cu(In,Ga)Se2, Si HIT cells, and organic photovoltaic materials.

  16. Lipid and Glycolipid Isomer Analyses Using Ultra-High Resolution Ion Mobility Spectrometry Separations

    Energy Technology Data Exchange (ETDEWEB)

    Wojcik, Roza; Webb, Ian; Deng, Liulin; Garimella, Sandilya; Prost, Spencer; Ibrahim, Yehia; Baker, Erin; Smith, Richard

    2017-01-01

    Understanding the biological mechanisms related to lipids and glycolipids is challenging due to the vast number of possible isomers. Mass spectrometry (MS) measurements are currently the dominant approach for studying and providing detailed information on lipid and glycolipid structures. However, difficulties in distinguishing many structural isomers (e.g. distinct acyl chain positions, double bond locations, as well as glycan isomers) inhibit the understanding of their biological roles. Here we utilized ultra-high resolution ion mobility spectrometry (IMS) separations based upon the use of traveling waves in a serpentine long path length multi-pass Structures for Lossless Manipulations (SLIM) to enhance isomer resolution. The multi-pass arrangement allowed separations ranging from ~16 m (1 pass) to ~470 m (32 passes) to be investigated for the distinction of lipids and glycolipids with extremely small structural differences. These ultra-high resolution SLIM IMS-MS analyses provide a foundation for exploring and better understanding isomer specific biological and disease processes.

  17. Using Mobile Laser Scanning Data for Features Extraction of High Accuracy Driving Maps

    Science.gov (United States)

    Yang, Bisheng; Liu, Yuan; Liang, Fuxun; Dong, Zhen

    2016-06-01

    High Accuracy Driving Maps (HADMs) are the core component of Intelligent Drive Assistant Systems (IDAS), which can effectively reduce the traffic accidents due to human error and provide more comfortable driving experiences. Vehicle-based mobile laser scanning (MLS) systems provide an efficient solution to rapidly capture three-dimensional (3D) point clouds of road environments with high flexibility and precision. This paper proposes a novel method to extract road features (e.g., road surfaces, road boundaries, road markings, buildings, guardrails, street lamps, traffic signs, roadside-trees, power lines, vehicles and so on) for HADMs in highway environment. Quantitative evaluations show that the proposed algorithm attains an average precision and recall in terms of 90.6% and 91.2% in extracting road features. Results demonstrate the efficiencies and feasibilities of the proposed method for extraction of road features for HADMs.

  18. The importance of incorporating functional habitats into conservation planning for highly mobile species in dynamic systems.

    Science.gov (United States)

    Webb, Matthew H; Terauds, Aleks; Tulloch, Ayesha; Bell, Phil; Stojanovic, Dejan; Heinsohn, Robert

    2017-10-01

    The distribution of mobile species in dynamic systems can vary greatly over time and space. Estimating their population size and geographic range can be problematic and affect the accuracy of conservation assessments. Scarce data on mobile species and the resources they need can also limit the type of analytical approaches available to derive such estimates. We quantified change in availability and use of key ecological resources required for breeding for a critically endangered nomadic habitat specialist, the Swift Parrot (Lathamus discolor). We compared estimates of occupied habitat derived from dynamic presence-background (i.e., presence-only data) climatic models with estimates derived from dynamic occupancy models that included a direct measure of food availability. We then compared estimates that incorporate fine-resolution spatial data on the availability of key ecological resources (i.e., functional habitats) with more common approaches that focus on broader climatic suitability or vegetation cover (due to the absence of fine-resolution data). The occupancy models produced significantly (P < 0.001) smaller (up to an order of magnitude) and more spatially discrete estimates of the total occupied area than climate-based models. The spatial location and extent of the total area occupied with the occupancy models was highly variable between years (131 and 1498 km(2) ). Estimates accounting for the area of functional habitats were significantly smaller (2-58% [SD 16]) than estimates based only on the total area occupied. An increase or decrease in the area of one functional habitat (foraging or nesting) did not necessarily correspond to an increase or decrease in the other. Thus, an increase in the extent of occupied area may not equate to improved habitat quality or function. We argue these patterns are typical for mobile resource specialists but often go unnoticed because of limited data over relevant spatial and temporal scales and lack of spatial data on the

  19. Evolution of High-Temperature Superconductivity from a Low-T_{c} Phase Tuned by Carrier Concentration in FeSe Thin Flakes.

    Science.gov (United States)

    Lei, B; Cui, J H; Xiang, Z J; Shang, C; Wang, N Z; Ye, G J; Luo, X G; Wu, T; Sun, Z; Chen, X H

    2016-02-19

    We report the evolution of superconductivity in an FeSe thin flake with systematically regulated carrier concentrations by the liquid-gating technique. With electron doping tuned by the gate voltage, high-temperature superconductivity with an onset at 48 K can be achieved in an FeSe thin flake with T_{c} less than 10 K. This is the first time such high temperature superconductivity in FeSe is achieved without either an epitaxial interface or external pressure, and it definitely proves that the simple electron-doping process is able to induce high-temperature superconductivity with T_{c}^{onset} as high as 48 K in bulk FeSe. Intriguingly, our data also indicate that the superconductivity is suddenly changed from a low-T_{c} phase to a high-T_{c} phase with a Lifshitz transition at a certain carrier concentration. These results help to build a unified picture to understand the high-temperature superconductivity among all FeSe-derived superconductors and shed light on the further pursuit of a higher T_{c} in these materials.

  20. Transformational Electronics: Towards Flexible Low-Cost High Mobility Channel Materials

    KAUST Repository

    Nassar, Joanna M.

    2014-05-01

    For the last four decades, Si CMOS technology has been advancing with Moore’s law prediction, working itself down to the sub-20 nm regime. However, fundamental problems and limitations arise with the down-scaling of transistors and thus new innovations needed to be discovered in order to further improve device performance without compromising power consumption and size. Thus, a lot of studies have focused on the development of new CMOS compatible architectures as well as the discovery of new high mobility channel materials that will allow further miniaturization of CMOS transistors and improvement of device performance. Pushing the limits even further, flexible and foldable electronics seem to be the new attractive topic. By being able to make our devices flexible through a CMOS compatible process, one will be able to integrate hundreds of billions of more transistors in a small volumetric space, allowing to increase the performance and speed of our electronics all together with making things thinner, lighter, smaller and even interactive with the human skin. Thus, in this thesis, we introduce for the first time a cost-effective CMOS compatible approach to make high-k/metal gate devices on flexible Germanium (Ge) and Silicon-Germanium (SiGe) platforms. In the first part, we will look at the various approaches in the literature that has been developed to get flexible platforms, as well as we will give a brief overview about epitaxial growth of Si1-xGex films. We will also examine the electrical properties of the Si1-xGex alloys up to Ge (x=1) and discuss how strain affects the band structure diagram, and thus the mobility of the material. We will also review the material growth properties as well as the state-of-the-art results on high mobility metal-oxide semiconductor capacitors (MOSCAPs) using strained SiGe films. Then, we will introduce the flexible process that we have developed, based on a cost-effective “trench-protect-release-reuse” approach, utilizing