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Sample records for high al-content algan

  1. Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

    OpenAIRE

    Xiao Wang; Wei Wang; Jingli Wang; Hao Wu; Chang Liu

    2017-01-01

    P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/(GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as MgG...

  2. Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

    Science.gov (United States)

    Wang, Xiao; Wang, Wei; Wang, Jingli; Wu, Hao; Liu, Chang

    2017-03-01

    P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/(GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as MgGa δ doped AlGaN SLs. Mg acceptor activation energy was significantly reduced from 0.378 to 0.331 eV by using MgGa δ doping in SLs instead of traditional doping in alloys. This new process was confirmed to be able to realize high p-type doping in high Al-content AlGaN.

  3. Effects of fluorine-based plasma treatment and thermal annealing on high-Al content AlGaN Schottky contact

    International Nuclear Information System (INIS)

    Liu Fang; Qin Zhixin

    2016-01-01

    Fluorine plasma treatment was used prior to the Schottky metal deposition on the undoped Al 0.45 Ga 0.55 N, which aimed at the solar-blind wavelength. After fluorine plasma treatment and before depositing the Ni/Au Schottky, the samples were thermal annealed in the N 2 gas at 400 °C. The reverse leakage current density of Al 0.45 Ga 0.55 N Schottky diode was reduced by 2 orders of magnitude at −10 V. The reverse leakage current density was reduced by 3 orders of magnitude after thermal annealing. Further capacitance–frequency analysis revealed that the fluorine-based plasma treatment reduces the surface states of AlGaN by one order of magnitude at different surface state energies. The capacitance–frequency analysis also proved that the concentration of carriers in AlGaN top is reduced through fluorine plasma treatment. (paper)

  4. High power AlGaN ultraviolet light emitters

    International Nuclear Information System (INIS)

    Shatalov, Max; Sun, Wenhong; Jain, Rakesh; Lunev, Alex; Hu, Xuhong; Dobrinsky, Alex; Bilenko, Yuri; Yang, Jinwei; Gaska, Remis; Garrett, Gregory A; Rodak, Lee E; Wraback, Michael; Shur, Michael

    2014-01-01

    We present the analysis of the external quantum efficiency in AlGaN deep ultraviolet (DUV) light-emitting diodes (LEDs) on sapphire substrates and discuss factors affecting the output power of DUV LEDs. Performance of the LED is related to optimization of the device structure design and improvements of the epitaxial material quality. (invited article)

  5. High power AlGaN ultraviolet light emitters

    Science.gov (United States)

    Shatalov, Max; Sun, Wenhong; Jain, Rakesh; Lunev, Alex; Hu, Xuhong; Dobrinsky, Alex; Bilenko, Yuri; Yang, Jinwei; Garrett, Gregory A.; Rodak, Lee E.; Wraback, Michael; Shur, Michael; Gaska, Remis

    2014-06-01

    We present the analysis of the external quantum efficiency in AlGaN deep ultraviolet (DUV) light-emitting diodes (LEDs) on sapphire substrates and discuss factors affecting the output power of DUV LEDs. Performance of the LED is related to optimization of the device structure design and improvements of the epitaxial material quality.

  6. Quantified Hole Concentration in AlGaN Nanowires for High-Performance Ultraviolet Emitters

    KAUST Repository

    Zhao, Chao; Ebaid, Mohamed; Zhang, Huafan; Priante, Davide; Janjua, Bilal; Zhang, Daliang; Wei, Nini; Alhamoud, Abdullah; Shakfa, M. Khaled; Ng, Tien Khee; Ooi, Boon S.

    2018-01-01

    P-type doping in wide bandgap and new classes of ultra-wide bandgap materials has long been a scientific and engineering problem. The challenges arise from the large activation energy of dopants and high densities of dislocations in materials. We report here, a significantly enhanced p-type conduction using high-quality AlGaN nanowires. For the first time, the hole concentration in Mg-doped AlGaN nanowires is quantified. The incorporation of Mg into AlGaN was verified by correlation with photoluminescence and Raman measurements. The open-circuit potential measurements further confirmed the p-type conductivity; while Mott-Schottky experiments measured a hole concentration of 1.3×1019 cm-3. These results from photoelectrochemical measurements allow us to design prototype ultraviolet (UV) light-emitting diodes (LEDs) incorporating the AlGaN quantum-disks-in-nanowire and optimized p-type AlGaN contact layer for UV-transparency. The ~335-nm LEDs exhibited a low turn-on voltage of 5 V with a series resistance of 32 Ω, due to the efficient p-type doping of the AlGaN nanowires. The bias-dependent Raman measurements further revealed the negligible self-heating of devices. This study provides an attractive solution to evaluate electrical properties of AlGaN, which is applicable to other wide bandgap nanostructures. Our results are expected to open doors to new applications for wide and ultra-wide bandgap materials.

  7. Quantified Hole Concentration in AlGaN Nanowires for High-Performance Ultraviolet Emitters

    KAUST Repository

    Zhao, Chao

    2018-05-29

    P-type doping in wide bandgap and new classes of ultra-wide bandgap materials has long been a scientific and engineering problem. The challenges arise from the large activation energy of dopants and high densities of dislocations in materials. We report here, a significantly enhanced p-type conduction using high-quality AlGaN nanowires. For the first time, the hole concentration in Mg-doped AlGaN nanowires is quantified. The incorporation of Mg into AlGaN was verified by correlation with photoluminescence and Raman measurements. The open-circuit potential measurements further confirmed the p-type conductivity; while Mott-Schottky experiments measured a hole concentration of 1.3×1019 cm-3. These results from photoelectrochemical measurements allow us to design prototype ultraviolet (UV) light-emitting diodes (LEDs) incorporating the AlGaN quantum-disks-in-nanowire and optimized p-type AlGaN contact layer for UV-transparency. The ~335-nm LEDs exhibited a low turn-on voltage of 5 V with a series resistance of 32 Ω, due to the efficient p-type doping of the AlGaN nanowires. The bias-dependent Raman measurements further revealed the negligible self-heating of devices. This study provides an attractive solution to evaluate electrical properties of AlGaN, which is applicable to other wide bandgap nanostructures. Our results are expected to open doors to new applications for wide and ultra-wide bandgap materials.

  8. Botulinum toxin detection using AlGaN /GaN high electron mobility transistors

    Science.gov (United States)

    Wang, Yu-Lin; Chu, B. H.; Chen, K. H.; Chang, C. Y.; Lele, T. P.; Tseng, Y.; Pearton, S. J.; Ramage, J.; Hooten, D.; Dabiran, A.; Chow, P. P.; Ren, F.

    2008-12-01

    Antibody-functionalized, Au-gated AlGaN /GaN high electron mobility transistors (HEMTs) were used to detect botulinum toxin. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN /GaN HEMT drain-source current showed a rapid response of less than 5s when the target toxin in a buffer was added to the antibody-immobilized surface. We could detect a range of concentrations from 1to10ng/ml. These results clearly demonstrate the promise of field-deployable electronic biological sensors based on AlGaN /GaN HEMTs for botulinum toxin detection.

  9. Optical, structural, and nuclear scientific studies of AlGaN with high Al composition

    Science.gov (United States)

    Lin, Tse Yang; Chung, Yee Ling; Li, Lin; Yao, Shude; Lee, Y. C.; Feng, Zhe Chuan; Ferguson, Ian T.; Lu, Weijie

    2010-08-01

    AlGaN epilayers with higher Al-compositions were grown by Metalorganic Chemical Vapor Deposition (MOCVD) on (0001) sapphire. Trimethylgallium (TMGa), trimethylaluminium (TMAl) and NH3 were used as the source precursors for Ga, Al, and N, respectively. A 25 nm AlN nucleation layer was first grown at low-temperature of 590 °C at 300 Torr. Followed, AlxGa1-xN layers were grown at 1080 °C on low-temperature AlN nucleation layers. The heterostructures were characterized by a series of techniques, including x-ray diffraction (XRD), Rutherford backscattering (RBS), photoluminescence (PL), scanning electron microscopy (SEM) and Raman scattering. Precise Al compositions were determined through XRD, RBS, and SEM combined measurements. Room Temperature Raman Scattering spectra shows three major bands from AlGaN alloys, which are AlN-like, A1 longitudinal optical (LO) phonon modes, and E2 transverse optical (TO) band, respectively, plus several peak comes from the substrate. Raman spectral line shape analysis lead to an optical determination of the electrical property free carrier concentration of AlGaN. The optical properties of AlGaN with high Al composition were presented here.

  10. High temperature properties of the Cr-Nb-Al-N coatings with increasing Al contents

    OpenAIRE

    Li, W. Z.; Polcar, T.; Evaristo, M.; Cavaleiro, A.

    2013-01-01

    Cr-Nb-Al-N coatings with Al content from 0 to 12 at.% were deposited by d.c. reactive magnetron sputtering. The coatings were annealed in protective atmosphere at 800 and 900 °C for 1 h and exposed to air at 800, 900 and 1200 °C for different times. The chemical composition, structure, microstructure, hardness and adhesive/cohesive strength of the coatings, in as-deposited and annealed conditions, were investigated and the oxidation resistance was evaluated. As expected, the Al content increa...

  11. High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers

    International Nuclear Information System (INIS)

    Li Guowang; Cao Yu; Xing Huili Grace; Jena, Debdeep

    2010-01-01

    We report high-electron mobility nitride heterostructures with >70% Al composition AlGaN alloy barriers grown by molecular beam epitaxy. Direct growth of such AlGaN layers on GaN resulted in hexagonal trenches and a low mobility polarization-induced charge. By applying growth interruption at the heterojunction, the surface morphology improved dramatically and the room temperature two-dimensional electron gas (2DEG) mobility increased by an order of magnitude, exceeding 1300 cm 2 /V s. The 2DEG density was tunable at 0.4-3.7x10 13 /cm 2 by varying the total barrier thickness (t). Surface barrier heights of the heterostructures were extracted and exhibited dependence on t.

  12. An improved design for AlGaN solar-blind avalanche photodiodes with enhanced avalanche ionization

    International Nuclear Information System (INIS)

    Tang Yin; Cai Qing; Chen Dun-Jun; Lu Hai; Zhang Rong; Zheng You-Dou; Yang Lian-Hong; Dong Ke-Xiu

    2017-01-01

    To enhance the avalanche ionization, we designed a new separate absorption and multiplication AlGaN solar-blind avalanche photodiode (APD) by using a high/low-Al-content AlGaN heterostructure as the multiplication region instead of the conventional AlGaN homogeneous layer. The calculated results show that the designed APD with Al 0.3 Ga 0.7 N/Al 0.45 Ga 0.55 N heterostructure multiplication region exhibits a 60% higher gain than the conventional APD and a smaller avalanche breakdown voltage due to the use of the low-Al-content Al 0.3 Ga 0.7 N which has about a six times higher hole ionization coefficient than the high-Al-content Al 0.45 Ga 0.55 N. Meanwhile, the designed APD still remains a good solar-blind characteristic by introducing a quarter-wave AlGaN/AlN distributed Bragg reflectors structure at the bottom of the device. (paper)

  13. Degradation of AlGaN/GaN High Electron Mobility Transistors with Different AlGaN Layer Thicknesses under Strong Electric Field

    International Nuclear Information System (INIS)

    Ling, Yang; Yue, Hao; Xiao-Hua, Ma; Jing-Jing, Ma; Cheng, Zhu

    2010-01-01

    The degradation of AlGaN/GaN high electron mobility transistors (HEMTs) has a close relationship with a model of traps in AlGaN barriers as a result of high electric field. We mainly discuss the impacts of strong electrical field on the AlGaN barrier thickness of AlGaN/GaN HEMTs. It is found that the device with a thin AlGaN barrier layer is more easily degraded. We study the degradation of four parameters, i.e. the gate series resistance R Gate , channel resistance R channel , gate current I G,off at V GS = −5 and V DS = 0.1 V, and drain current I D,max at V GS = 2 and V DS = 5 V. In addition, the degradation mechanisms of the device electrical parameters are also investigated in detail. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  14. Control of short-channel effects in InAlN/GaN high-electron mobility transistors using graded AlGaN buffer

    Science.gov (United States)

    Han, Tiecheng; Zhao, Hongdong; Peng, Xiaocan; Li, Yuhai

    2018-04-01

    A graded AlGaN buffer is designed to realize the p-type buffer by inducing polarization-doping holes. Based on the two-dimensional device simulator, the effect of the graded AlGaN buffer on the direct-current (DC) and radio-frequency (RF) performance of short-gate InAlN/GaN high-electron mobility transistors (HEMTs) are investigated, theoretically. Compared to standard HEMT, an enhancement of electron confinement and a good control of short-channel effect (SCEs) are demonstrated in the graded AlGaN buffer HEMT. Accordingly, the pinched-off behavior and the ability of gate modulation are significantly improved. And, no serious SCEs are observed in the graded AlGaN buffer HEMT with an aspect ratio (LG/tch) of about 6.7, much lower than that of the standard HEMT (LG/tch = 13). In addition, for a 70-nm gate length, a peak current gain cutoff frequency (fT) of 171 GHz and power gain cutoff frequency (fmax) of 191 GHz are obtained in the grade buffer HEMT, which are higher than those of the standard one with the same gate length.

  15. Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis

    International Nuclear Information System (INIS)

    Zhu, Jie-Jie; Ma, Xiao-Hua; Hou, Bin; Chen, Wei-Wei; Hao, Yue

    2014-01-01

    Trap states in Al 0.55 Ga 0.45 N/GaN Schottky-gate high-electron-mobility transistors (S-HEMTs) and Al 2 O 3 /Al 0.55 Ga 0.45 N/GaN metal-oxide-semiconductor HEMTs (MOS-HEMTs) were investigated with conductance method in this paper. Surface states with time constant of (0.09–0.12) μs were found in S-HEMTs, and electron tunneling rather than emission was deemed to be the dominant de-trapping mechanism due to the high electric field in high Al content barrier. The density of surface states evaluated in S-HEMTs was (1.02–4.67)×10 13 eV −1 ·cm −2 . Al 2 O 3 gate insulator slightly reduced the surface states, but introduced low density of new traps with time constant of (0.65–1.29) μs into MOS-HEMTs

  16. AlGaN/GaN heterostructures with an AlGaN layer grown directly on reactive-ion-etched GaN showing a high electron mobility (>1300 cm2 V-1 s-1)

    Science.gov (United States)

    Yamamoto, Akio; Makino, Shinya; Kanatani, Keito; Kuzuhara, Masaaki

    2018-04-01

    In this study, the metal-organic-vapor-phase-epitaxial growth behavior and electrical properties of AlGaN/GaN structures prepared by the growth of an AlGaN layer on a reactive-ion-etched (RIE) GaN surface without regrown GaN layers were investigated. The annealing of RIE-GaN surfaces in NH3 + H2 atmosphere, employed immediately before AlGaN growth, was a key process in obtaining a clean GaN surface for AlGaN growth, that is, in obtaining an electron mobility as high as 1350 cm2 V-1 s-1 in a fabricated AlGaN/RIE-GaN structure. High-electron-mobility transistors (HEMTs) were successfully fabricated with AlGaN/RIE-GaN wafers. With decreasing density of dotlike defects observed on the surfaces of AlGaN/RIE-GaN wafers, both two-dimensional electron gas properties of AlGaN/RIE-GaN structures and DC characteristics of HEMTs were markedly improved. Since dotlike defect density was markedly dependent on RIE lot, rather than on growth lot, surface contaminations of GaN during RIE were believed to be responsible for the formation of dotlike defects and, therefore, for the inferior electrical properties.

  17. Fabrication of Very High Efficiency 5.8 GHz Power Amplifiers using AlGaN HFETs on SiC Substrates for Wireless Power Transmission

    Science.gov (United States)

    Sullivan, Gerry

    2001-01-01

    For wireless power transmission using microwave energy, very efficient conversion of the DC power into microwave power is extremely important. Class E amplifiers have the attractive feature that they can, in theory, be 100% efficient at converting, DC power to RF power. Aluminum gallium nitride (AlGaN) semiconductor material has many advantageous properties, relative to silicon (Si), gallium arsenide (GaAs), and silicon carbide (SiC), such as a much larger bandgap, and the ability to form AlGaN/GaN heterojunctions. The large bandgap of AlGaN also allows for device operation at higher temperatures than could be tolerated by a smaller bandgap transistor. This could reduce the cooling requirements. While it is unlikely that the AlGaN transistors in a 5.8 GHz class E amplifier can operate efficiently at temperatures in excess of 300 or 400 C, AlGaN based amplifiers could operate at temperatures that are higher than a GaAs or Si based amplifier could tolerate. Under this program, AlGaN microwave power HFETs have been fabricated and characterized. Hybrid class E amplifiers were designed and modeled. Unfortunately, within the time frame of this program, good quality HFETs were not available from either the RSC laboratories or commercially, and so the class E amplifiers were not constructed.

  18. Semipolar MOVPE AlGaN on (10 anti 10) m-plane sapphire; MOVPE von semipolarem AlGaN auf (10 anti 10) m-plane Saphir

    Energy Technology Data Exchange (ETDEWEB)

    Mehnke, Frank; Stellmach, Joachim; Frentrup, Martin; Kusch, Gunnar; Wernicke, Tim; Pristovsek, Markus; Kneissl, Michael [Technische Universitaet Berlin, Institut fuer Festkoerperphysik, Hardenbergstr. 36, 10623 Berlin (Germany)

    2011-07-01

    The energy gap of AlGaN varies between 3.4 eV and 6.2 eV and allows light emitting diodes (LED) in the ultraviolet spectral region. The authors studied semipolar (11 anti 22) AlGaN layers that were deposited on (10 anti 10) m-plane sapphire using MOVPE (metalorganic vapor phase epitaxy) without nucleation layer with a substrate temperature below 1100 C in H2 atmosphere. The layers are preferably (11 anti 22) oriented. The sample show a surface roughness between 15 and 2 nm. The Al content of the smoothest samples is about 60% determined by transmission experiments. Below 60% Al content a triangular morphology was observed, the opening angle increased with decreasing Al content. The absorption edge was 0.05 eV (GaN) to 0.35 eV (AlN) below the band edge of (0001) oriented AlGaN layers. Further investigations of semipolar AlGaN layers to study the applicability for UV LEDs are under preparation.

  19. Highly uniform ultraviolet-A quantum-confined AlGaN nanowire LEDs on metal/silicon with a TaN interlayer

    KAUST Repository

    Priante, Davide; Janjua, Bilal; Prabaswara, Aditya; Subedi, Ram Chandra; Elafandy, Rami T.; Lopatin, Sergei; Anjum, Dalaver H.; Zhao, Chao; Ng, Tien Khee; Ooi, Boon S.

    2017-01-01

    In this paper, we describe ultraviolet-A (UV-A) light-emitting diodes (LEDs) emitting at 325 nm based on a highly uniform structure of quantum-confined AlGaN quantum-disk nanowires (NWs). By incorporating a 20 nm TaN interlayer between a Ti pre-orienting layer and the silicon substrate, we eliminated the potential barrier for carrier injection and phonon transport, and inhibited the formation of interfacial silicide that led to device failure. Compared to previous reports on metal substrate, we achieved a 16 × reduction in root-mean-square (RMS) roughness, from 24 nm to 1.6 nm, for the samples with the Ti/TaN metal-bilayer, owing to the effective diffusion barrier characteristic of TaN. This was confirmed using energy dispersive X-ray spectroscopy (EDXS) and electron energy loss spectroscopy (EELS). We achieved a considerable increase in the injection current density (up to 90 A/cm2) compared to our previous studies, and an optical power of 1.9 μW for the 0.5 × 0.5 mm2 NWs-LED. This work provides a feasible pathway for both a reliable and stable UV-A device operation at elevated current injection, and eventually towards low-cost production of UV devices, leveraging on the scalability of silicon substrates.

  20. Highly uniform ultraviolet-A quantum-confined AlGaN nanowire LEDs on metal/silicon with a TaN interlayer

    KAUST Repository

    Priante, Davide

    2017-11-02

    In this paper, we describe ultraviolet-A (UV-A) light-emitting diodes (LEDs) emitting at 325 nm based on a highly uniform structure of quantum-confined AlGaN quantum-disk nanowires (NWs). By incorporating a 20 nm TaN interlayer between a Ti pre-orienting layer and the silicon substrate, we eliminated the potential barrier for carrier injection and phonon transport, and inhibited the formation of interfacial silicide that led to device failure. Compared to previous reports on metal substrate, we achieved a 16 × reduction in root-mean-square (RMS) roughness, from 24 nm to 1.6 nm, for the samples with the Ti/TaN metal-bilayer, owing to the effective diffusion barrier characteristic of TaN. This was confirmed using energy dispersive X-ray spectroscopy (EDXS) and electron energy loss spectroscopy (EELS). We achieved a considerable increase in the injection current density (up to 90 A/cm2) compared to our previous studies, and an optical power of 1.9 μW for the 0.5 × 0.5 mm2 NWs-LED. This work provides a feasible pathway for both a reliable and stable UV-A device operation at elevated current injection, and eventually towards low-cost production of UV devices, leveraging on the scalability of silicon substrates.

  1. High Al-content AlxGa1-xN epilayers grown on Si substrate by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Hussein, A.SH.; Thahab, S.M.; Hassan, Z.; Chin, C.W.; Abu Hassan, H.; Ng, S.S.

    2009-01-01

    The microstructure and optical properties of Al x Ga 1-x N/GaN/AlN films on Si (1 1 1) substrate grown by plasma-assisted molecular beam epitaxy (MBE) have been studied and investigated. Reflection high energy electron diffraction (RHEED), scanning electron microscopy (SEM), high-resolution X-ray diffraction (HR-XRD), energy dispersive X-ray spectroscopy (EDS) line analysis and photoluminescence (PL) were used to investigate a reconstruction pattern, cross-section, mole fraction and crystalline quality of the heterostructure. By applying the Vegard's law, a high Al-mole fraction of Al x Ga 1-x N sample with value of 0.43 has been obtained and compared with EDS line analysis measurement value. PL spectrum has exhibited a sharp and intense band edge emission of GaN with the absence of yellow emission band, indicating good crystal quality of the Al x Ga 1-x N has been successfully grown on Si substrate.

  2. Synthesis of high Al content AlxGa1−xN ternary films by pulsed laser co-ablation of GaAs and Al targets assisted by nitrogen plasma

    International Nuclear Information System (INIS)

    Cai, Hua; You, Qinghu; Hu, Zhigao; Guo, Shuang; Yang, Xu; Sun, Jian; Xu, Ning; Wu, Jiada

    2014-01-01

    Highlights: • Al x Ga 1−x N films were synthesized by co-ablation of an Al target and a GaAs target. • Nitrogen plasma was used to assist the synthesis of Al x Ga 1−x N ternary films. • The Al x Ga 1−x N films are slightly rich in N with an Al content above 0.6. • The Al x Ga 1−x N films are hexagonal wurtzite in crystal structure. • The Al x Ga 1−x N films have an absorption edge of 260 nm and a band gap of 4.7 eV. - Abstract: We present the synthesis of Al x Ga 1−x N ternary films by pulsed laser co-ablation of a polycrystalline GaAs target and a metallic Al target in the environment of nitrogen plasma which provides nitrogen for the films and assists the formation of nitride films. Field emission scanning electron microscopy exposes the smooth surface appearance and dense film structure. X-ray diffraction, Fourier-transform infrared spectroscopy and Raman scattering spectroscopy reveal the hexagonal wurtzite structure. Optical characterization shows high optical transmittance with an absorption edge of about 260 nm and a band gap of 4.7 eV. Compositional analysis gives the Al content of about 0.6. The structure and optical properties of the Al x Ga 1−x N films are compared with those of binary GaN and AlN films synthesized by ablating GaAs or Al target with the same nitrogen plasma assistance

  3. Effect of Al content on structure and mechanical properties of the Al{sub x}CrNbTiVZr (x = 0; 0.25; 0.5; 1) high-entropy alloys

    Energy Technology Data Exchange (ETDEWEB)

    Yurchenko, N.Yu. [Laboratory of Bulk Nanostructured Materials, Belgorod State University, Belgorod 308015 (Russian Federation); Stepanov, N.D., E-mail: stepanov@bsu.edu.ru [Laboratory of Bulk Nanostructured Materials, Belgorod State University, Belgorod 308015 (Russian Federation); Shaysultanov, D.G. [Laboratory of Bulk Nanostructured Materials, Belgorod State University, Belgorod 308015 (Russian Federation); Tikhonovsky, M.A. [National Science Center “Kharkov Institute of Physics and Technology”, NAS of Ukraine, Kharkov, 61108 (Ukraine); Salishchev, G.A. [Laboratory of Bulk Nanostructured Materials, Belgorod State University, Belgorod 308015 (Russian Federation)

    2016-11-15

    In present study, structure and mechanical properties of the Al{sub x}CrNbTiVZr (x = 0; 0.25; 0.5; 1) high-entropy alloys after arc melting and annealing at 1200 °C for 24 h are investigated. The CrNbTiVZr alloy is composed of body centered cubic (bcc) and C15 (face centered cubic) Laves phases while the Al{sub x}CrNbTiVZr (x = 0.25; 0.5; 1) alloys consist of bcc and two C14 (hexagonal close packed) Laves phases with different chemical compositions. Thermodynamic modeling predicts existence of two phases – bcc and C15 Laves phase and broadening of single bcc phase field due to Al addition. The density of the alloys decreases with the increase of Al content. The alloys are found to be extremely brittle at room temperature and 600 °C. The alloys have high strength at temperatures of 800–1000 °C. For example, yield strength at 800 °C increases from 440 MPa for the CrNbTiVZr alloy to 1250 MPa for the AlCrNbTiVZr alloy. The experimental phase composition of the Al{sub x}CrNbTiVZr alloys is compared with predicted equilibrium phases and the factors governing the transformation of C15 to C14 Laves phases due to Al addition to the CrNbTiVZr alloy analyzed. Specific properties of the alloys are compared with other high-entropy alloys and commercial Ni-based superalloys. - Highlights: •Al{sub x}CrNbTiVZr (x = 0; 0.25; 0.5; 1) alloys are arc melted and annealed at 1200 °C. •The CrNbTiVZr alloy has bcc and C15 Laves phases. •The Al-containing alloys are composed of bcc and two C14 Laves phases. •The alloys demonstrate high specific strength at temperatures of 800 °C and 1000 °C. •The strength of the alloys increases in proportion with increase of Al content.

  4. High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

    Energy Technology Data Exchange (ETDEWEB)

    Reddy, Pramod; Washiyama, Shun; Kaess, Felix; Hernandez-Balderrama, Luis H.; Haidet, Brian B.; Alden, Dorian; Franke, Alexander; Sarkar, Biplab; Kohn, Erhard; Collazo, Ramon; Sitar, Zlatko [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States); Hayden Breckenridge, M. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States); REU, Physics Department at Wofford College, Spartanburg, South Carolina 29303 (United States)

    2016-04-14

    In this work, we employed X-ray photoelectron spectroscopy to determine the band offsets and interface Fermi level at the heterojunction formed by stoichiometric silicon nitride deposited on Al{sub x}Ga{sub 1-x}N (of varying Al composition “x”) via low pressure chemical vapor deposition. Silicon nitride is found to form a type II staggered band alignment with AlGaN for all Al compositions (0 ≤ x ≤ 1) and present an electron barrier into AlGaN even at higher Al compositions, where E{sub g}(AlGaN) > E{sub g}(Si{sub 3}N{sub 4}). Further, no band bending is observed in AlGaN for x ≤ 0.6 and a reduced band bending (by ∼1 eV in comparison to that at free surface) is observed for x > 0.6. The Fermi level in silicon nitride is found to be at 3 eV with respect to its valence band, which is likely due to silicon (≡Si{sup 0/−1}) dangling bonds. The presence of band bending for x > 0.6 is seen as a likely consequence of Fermi level alignment at Si{sub 3}N{sub 4}/AlGaN hetero-interface and not due to interface states. Photoelectron spectroscopy results are corroborated by current-voltage-temperature and capacitance-voltage measurements. A shift in the interface Fermi level (before band bending at equilibrium) from the conduction band in Si{sub 3}N{sub 4}/n-GaN to the valence band in Si{sub 3}N{sub 4}/p-GaN is observed, which strongly indicates a reduction in mid-gap interface states. Hence, stoichiometric silicon nitride is found to be a feasible passivation and dielectric insulation material for AlGaN at any composition.

  5. Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

    International Nuclear Information System (INIS)

    Duan Bao-Xing; Yang Yin-Tang

    2012-01-01

    In this paper, two-dimensional electron gas (2DEG) regions in AlGaN/GaN high electron mobility transistors (HEMTs) are realized by doping partial silicon into the AlGaN layer for the first time. A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge. The high electric field near the gate for the complete silicon doping structure is effectively decreased, which makes the surface electric field uniform. The high electric field peak near the drain results from the potential difference between the surface and the depletion regions. Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer. The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain. The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  6. Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al2O3 in AlGaN/GaN high electron mobility transistors with normally off capability

    International Nuclear Information System (INIS)

    Capriotti, M.; Alexewicz, A.; Fleury, C.; Gavagnin, M.; Bethge, O.; Wanzenböck, H. D.; Bertagnolli, E.; Pogany, D.; Strasser, G.; Visalli, D.; Derluyn, J.

    2014-01-01

    Using a generalized extraction method, the fixed charge density N int at the interface between in situ deposited SiN and 5 nm thick AlGaN barrier is evaluated by measurements of threshold voltage V th of an AlGaN/GaN metal insulator semiconductor high electron mobility transistor as a function of SiN thickness. The thickness of the originally deposited 50 nm thick SiN layer is reduced by dry etching. The extracted N int is in the order of the AlGaN polarization charge density. The total removal of the in situ SiN cap leads to a complete depletion of the channel region resulting in V th  = +1 V. Fabrication of a gate stack with Al 2 O 3 as a second cap layer, deposited on top of the in situ SiN, is not introducing additional fixed charges at the SiN/Al 2 O 3 interface

  7. Applications of Robust, Radiation Hard AlGaN Optoelectronic Devices in Space Exploration and High Energy Density Physics

    Energy Technology Data Exchange (ETDEWEB)

    Sun, K.

    2011-05-04

    This slide show presents: space exploration applications; high energy density physics applications; UV LED and photodiode radiation hardness; UV LED and photodiode space qualification; UV LED AC charge management; and UV LED satellite payload instruments. A UV LED satellite will be launched 2nd half 2012.

  8. High mobility AlGaN/GaN heterostructures grown on Si substrates using a large lattice-mismatch induced stress control technology

    International Nuclear Information System (INIS)

    Cheng, Jianpeng; Yang, Xuelin; Sang, Ling; Guo, Lei; Hu, Anqi; Xu, Fujun; Tang, Ning; Wang, Xinqiang; Shen, Bo

    2015-01-01

    A large lattice-mismatch induced stress control technology with a low Al content AlGaN layer has been used to grow high quality GaN layers on 4-in. Si substrates. The use of this technology allows for high mobility AlGaN/GaN heterostructures with electron mobility of 2040 cm 2 /(V·s) at sheet charge density of 8.4 × 10 12  cm −2 . Strain relaxation and dislocation evolution mechanisms have been investigated. It is demonstrated that the large lattice mismatch between the low Al content AlGaN layer and AlN buffer layer could effectively promote the edge dislocation inclination with relatively large bend angles and therefore significantly reduce the dislocation density in the GaN epilayer. Our results show a great potential for fabrication of low-cost and high performance GaN-on-Si power devices

  9. Visible-blind and solar-blind detection induced by defects in AlGaN high electron mobility transistors

    Science.gov (United States)

    Armstrong, Andrew M.; Klein, Brianna; Allerman, Andrew A.; Douglas, Erica A.; Baca, Albert G.; Crawford, Mary H.; Pickrell, Greg W.; Sanchez, Carlos A.

    2018-03-01

    Visible- and solar-blind detection was demonstrated using Al0.45Ga0.55N/Al0.30Ga0.70N and Al0.85Ga0.25N/Al0.70Ga0.30N high electron mobility transistors (HEMTs), respectively. Peak responsivities (S) of 3.9 × 106 A/W in the saturation mode and 6.2 × 104 A/W in the pinch-off mode were observed for the visible-blind Al0.45Ga0.55N/Al0.30Ga0.70N HEMT, and a peak S of 4.9 × 104 A/W was observed for the solar-blind Al0.85Ga0.15N/Al0.70Ga0.30N HEMT in the saturation mode. Spectrally resolved photocurrent investigation indicated that sub-bandgap absorption by defect states was the primary origin of the HEMTs' photoresponse. Defect-mediated responsivity caused slow photocurrent rise and fall times, but electrical pulsing was used to improve the bandwidth at the cost of optical gain. Operating HEMTs in this dynamic mode achieved a 25 Hz bandwidth with S = 2.9 × 105 A/W in accumulation and S = 2.0 × 104 A/W in pinch-off for visible-blind detection and S = 5.1 × 103 A/W for solar-blind detection.

  10. Low threshold for optical damage in AlGaN epilayers and heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Saxena, Tanuj [Department of ECSE, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Tamulaitis, Gintautas [Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Sauletekio al. 9-III, Vilnius, LT-10222 (Lithuania); Shatalov, Max; Yang, Jinwei; Gaska, Remis [Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, South Carolina 29209 (United States); Shur, Michael S. [Department of ECSE, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Department of PAPA, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    2013-11-28

    Laser pulses with duration much shorter than the effective carrier lifetime cause permanent photoluminescence (PL) quenching and enhancement of PL decay rate in bare-faceted and capped AlGaN epilayers and multiple quantum wells at pulse energies about an order of magnitude lower than those causing the surface to melt and degrade. In contrast, GaN epilayers exhibit no photomodification in the same excitation intensity range. PL spectra and decay kinetics show that lattice heating is not responsible for the observed changes in AlGaN, which result from the formation of nonradiative recombination centers via recombination-enhanced defect reactions occurring at high nonequilibrium carrier densities.

  11. Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications

    Science.gov (United States)

    Murugapandiyan, P.; Ravimaran, S.; William, J.; Meenakshi Sundaram, K.

    2017-11-01

    In this article, we present the DC and microwave characteristics of a novel 30 nm T-gate InAlN/AlN/GaN HEMT with AlGaN back-barrier. The device structure is simulated by using Synopsys Sentaurus TCAD Drift-Diffusion transport model at room temperature. The device features are heavily doped (n++ GaN) source/drain regions with Si3N4 passivated device surface for reducing the contact resistances and gate capacitances of the device, which uplift the microwave characteristics of the HEMTs. 30 nm gate length D-mode (E-mode) HEMT exhibited a peak drain current density Idmax of 2.3 (2.42) A/mm, transconductance gm of 1.24(1.65) S/mm, current gain cut-off frequency ft of 262 (246) GHz, power gain cut-off frequency fmax of 246(290) GHz and the three terminal off-state breakdown voltage VBR of 40(38) V. The preeminent microwave characteristics with the higher breakdown voltage of the proposed GaN-based HEMT are the expected to be the most optimistic applicant for future high power millimeter wave applications.

  12. Static and dynamic characteristics of Lg 50 nm InAlN/AlN/GaN HEMT with AlGaN back-barrier for high power millimeter wave applications

    Directory of Open Access Journals (Sweden)

    P. Murugapandiyan

    2017-12-01

    Full Text Available A novel 50 nm recessed T-gate AlN spacer based InAlN/GaN HEMT with AlGaN back-barrier is designed. The static and dynamic characteristics of the proposed device structure are investigated using Synopsys TCAD tool. The remarkable potential device features such as heavily doped source/drain region, Al2O3 passivated device surface helped the device to suppress the parasitic resistances and capacitances of the transistor for enhancing the microwave characteristics. The designed InAlN/GaN HEMT exhibits the sheet carrier density (ns of 1.9 × 1013 cm−2, the drain current density (Ids of 2.1 A/mm, the transconductance (gm of 800 mS/mm, the breakdown voltage (VBR of 40 V, the current gain cut-off frequency (ft of 221 GHz and the power gain cut-off frequency (fmax of 290 GHz. The superior static and dynamic characteristics of obtained InAlN/GaN HEMTs undoubtedly placed the device at the forefront for high power millimeter wave applications.

  13. From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure

    International Nuclear Information System (INIS)

    Fisichella, G.; Greco, G.; Roccaforte, F.; Giannazzo, F.

    2014-01-01

    The electrical behaviour of graphene (Gr) contacts to Al x Ga 1−x N/GaN heterostructures has been investigated, focusing, in particular, on the impact of the AlGaN microstructure on the current transport at Gr/AlGaN interface. Two Al 0.25 Ga 0.75 N/GaN heterostructures with very different quality in terms of surface roughness and defectivity, as evaluated by atomic force microscopy (AFM) and transmission electron microscopy, were compared in this study, i.e., a uniform and defect-free sample and a sample with a high density of typical V-defects, which locally cause a reduction of the AlGaN thickness. Nanoscale resolution current voltage (I-V) measurements by an Au coated conductive AFM tip were carried out at several positions both on the bare and Gr-coated AlGaN surfaces. Rectifying contacts were found onto both bare AlGaN surfaces, but with a more inhomogeneous and lower Schottky barrier height (Φ B  ≈ 0.6 eV) for AlGaN with V-defects, with respect to the case of the uniform AlGaN (Φ B  ≈ 0.9 eV). Instead, very different electrical behaviours were observed in the presence of the Gr interlayer between the Au tip and AlGaN, i.e., a Schottky contact with reduced barrier height (Φ B ≈ 0.4 eV) for the uniform AlGaN and an Ohmic contact for the AlGaN with V-defects. Interestingly, excellent lateral uniformity of the local I-V characteristics was found in both cases and can be ascribed to an averaging effect of the Gr electrode over the AlGaN interfacial inhomogeneities. Due to the locally reduced AlGaN layer thickness, V defect act as preferential current paths from Gr to the 2DEG and can account for the peculiar Ohmic behaviour of Gr contacts on defective AlGaN

  14. Growth and optical characteristics of Tm-doped AlGaN layer grown by organometallic vapor phase epitaxy

    Science.gov (United States)

    Takatsu, J.; Fuji, R.; Tatebayashi, J.; Timmerman, D.; Lesage, A.; Gregorkiewicz, T.; Fujiwara, Y.

    2018-04-01

    We report on the growth and optical properties of Tm-doped AlGaN layers by organometallic vapor phase epitaxy (OMVPE). The morphological and optical properties of Tm-doped GaN (GaN:Tm) and Tm-doped AlGaN (AlGaN:Tm) were investigated by Nomarski differential interference contrast microscopy and photoluminescence (PL) characterization. Nomarski images reveal an increase of surface roughness upon doping Tm into both GaN and AlGaN layers. The PL characterization of GaN:Tm shows emission in the near-infrared range originating from intra-4f shell transitions of Tm3+ ions. In contrast, AlGaN:Tm also exhibits blue light emission from Tm3+ ions. In that case, the wider band gap of the AlGaN host allows energy transfer to higher states of the Tm3+ ions. With time-resolved PL measurements, we could distinguish three types of luminescent sites of Tm3+ in the AlGaN:Tm layer, having different decay times. Our results confirm that Tm ions can be doped into GaN and AlGaN by OMVPE, and show potential for the fabrication of novel high-color-purity blue light emitting diodes.

  15. Influence of substrate miscut angle on surface morphology and luminescence properties of AlGaN

    International Nuclear Information System (INIS)

    Kusch, Gunnar; Edwards, Paul R.; Bruckbauer, Jochen; Martin, Robert W.; Li, Haoning; Parbrook, Peter J.; Sadler, Thomas C.

    2014-01-01

    The influence of substrate miscut on Al 0.5 Ga 0.5  N layers was investigated using cathodoluminescence (CL) hyperspectral imaging and secondary electron imaging in an environmental scanning electron microscope. The samples were also characterized using atomic force microscopy and high resolution X-ray diffraction. It was found that small changes in substrate miscut have a strong influence on the morphology and luminescence properties of the AlGaN layers. Two different types are resolved. For low miscut angle, a crack-free morphology consisting of randomly sized domains is observed, between which there are notable shifts in the AlGaN near band edge emission energy. For high miscut angle, a morphology with step bunches and compositional inhomogeneities along the step bunches, evidenced by an additional CL peak along the step bunches, are observed

  16. Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

    Science.gov (United States)

    Gunning, Brendan P.; Fabien, Chloe A. M.; Merola, Joseph J.; Clinton, Evan A.; Doolittle, W. Alan; Wang, Shuo; Fischer, Alec M.; Ponce, Fernando A.

    2015-01-01

    The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 × 1019 cm-3 with effective acceptor activation energies of 51 meV. Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 × 1020 cm-3 show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 × 1019 cm-3. The p-GaN and p-Al0.11Ga0.89N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3-3.5 V and series resistances of 6-10 Ω without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K.

  17. Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

    Energy Technology Data Exchange (ETDEWEB)

    Gunning, Brendan P.; Fabien, Chloe A. M.; Merola, Joseph J.; Clinton, Evan A.; Doolittle, W. Alan, E-mail: alan.doolittle@ece.gatech.edu [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Wang, Shuo; Fischer, Alec M.; Ponce, Fernando A. [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)

    2015-01-28

    The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 × 10{sup 19} cm{sup −3} with effective acceptor activation energies of 51 meV. Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 × 10{sup 20} cm{sup −3} show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 × 10{sup 19} cm{sup −3}. The p-GaN and p-Al{sub 0.11}Ga{sub 0.89}N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3–3.5 V and series resistances of 6–10 Ω without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K.

  18. Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

    International Nuclear Information System (INIS)

    Gunning, Brendan P.; Fabien, Chloe A. M.; Merola, Joseph J.; Clinton, Evan A.; Doolittle, W. Alan; Wang, Shuo; Fischer, Alec M.; Ponce, Fernando A.

    2015-01-01

    The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 × 10 19 cm −3 with effective acceptor activation energies of 51 meV. Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 × 10 20 cm −3 show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 × 10 19 cm −3 . The p-GaN and p-Al 0.11 Ga 0.89 N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3–3.5 V and series resistances of 6–10 Ω without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K

  19. Surface-Passivated AlGaN Nanowires for Enhanced Luminescence of Ultraviolet Light Emitting Diodes

    KAUST Repository

    Sun, Haiding

    2017-12-19

    Spontaneously-grown, self-aligned AlGaN nanowire ultraviolet light emitting diodes still suffer from low efficiency partially because of the strong surface recombination caused by surface states, i.e., oxidized surface and high density surface states. Several surface passivation methods have been introduced to reduce surface non-radiative recombination by using complex and toxic chemicals. Here, we present an effective method to suppress such undesirable surface recombination of the AlGaN nanowires via diluted potassium hydroxide (KOH) solution; a commonly used chemical process in semiconductor fabrication which is barely used as surface passivation solution in self-assembled nitride-based nanowires. The transmission electron microscopy investigation on the samples reveals almost intact nanowire structures after the passivation process. We demonstrated an approximately 49.7% enhancement in the ultraviolet light output power after 30-s KOH treatment on AlGaN nanowires grown on titanium-coated silicon substrates. We attribute such a remarkable enhancement to the removal of the surface dangling bonds and oxidized nitrides (Ga-O or Al-O bonds) at the surface as we observe the change of the carrier lifetime before and after the passivation. Thus, our results highlight the possibility of employing this process for the realization of high performance nanowire UV emitters.

  20. Gate less-FET pH Sensor Fabricated on Undoped AlGaN/ GaN HEMT Structure

    International Nuclear Information System (INIS)

    Maneea Eizadi Sharifabad; Mastura Shafinaz Zainal Abidin; Shaharin Fadzli Abd Rahman; Abdul Manaf Hashim; Abdul Rahim Abdul Rahman

    2011-01-01

    Gallium nitride with wurtzite crystal structure is a chemically stable semiconductor with high internal spontaneous and piezoelectric polarization, which make it highly suitable materials to create very sensitive and robust sensors for the detection of ions, gases and liquids. Sensing characteristics of an open-gate liquid-phase sensor fabricated on undoped-AlGaN/ GaN high-electron-mobility-transistor (HEMT) structure in aqueous solution was investigated. In ambient atmosphere, the open-gate undoped AlGaN/ GaN HEMT clearly showed only the presence of linear region of currents while Si-doped AlGaN/ GaN showed the linear and saturation regions of currents, very similar to those of gated devices. This seems to show that very low Fermi level pinning by surface states exists in undoped AlGaN/ GaN sample. In aqueous solution, the typical current-voltage (I-V) characteristics of HEMTs with good gate controllability were observed. The potential of the AlGaN surface at the open-gate area is effectively controlled via aqueous solution by Ag/ AgCl reference gate electrode. The open-gate undoped AlGaN/ GaN HEMT structure is capable of stable operation in aqueous electrolytes and exhibit linear sensitivity, and high sensitivity of 1.9 mA/ pH or 3.88 mA/ mm/ pH at drain-source voltage, VDS = 5 V was obtained. Due to large leakage current where it increases with the negative reference gate voltage, the Nernstians like sensitivity cannot be determined. Suppression of current leakage is likely to improve the device performance. The open-gate undoped-AlGaN/ GaN structure is expected to be suitable for pH sensing application. (author)

  1. Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer

    International Nuclear Information System (INIS)

    Peng, Enchao; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Yin, Haibo; Chen, Hong; Feng, Chun; Jiang, Lijuan; Hou, Xun; Wang, Zhanguo

    2013-01-01

    Highlights: •2DEG and 2DHG coexist in the AlGaN/AlN/GaN/AlGaN DH-structure. •The sheet densities of 2DEG and 2DHG vary with buffer Al content and GaN thickness. •The conditions for the disappearance of 2DHG are discussed. •Increasing buffer Al content provides better electron confinement. •Dislocation scattering is reduced in the DH-structure. -- Abstract: This is a theoretical study of AlGaN/AlN/GaN/AlGaN double heterojunction (DH) structure with AlGaN as buffer layer. Our calculation shows that as the buffer Al content increases, though two-dimensional electron gas (2DEG) sheet density decreases, the channel back-barrier caused by polarization-induced electric field in GaN provides better electron confinement. And under certain conditions the DH-structure shows bipolar characteristics, with an additional two-dimensional hole gas (2DHG) formed at GaN/AlGaN interface. The influence of the buffer Al content and GaN channel thickness on the 2DEG and 2DHG sheet densities are investigated, and the conditions for the disappearance of 2DHG are discussed. Also, the mobility inhibited by dislocation scattering is enhanced in DH-structure due to the enhancement of screening effect of the 2DEG

  2. Algan/Gan Hemt By Magnetron Sputtering System

    Science.gov (United States)

    Garcia Perez, Roman

    In this thesis, the growth of the semiconductor materials AlGaN and GaN is achieved by magnetron sputtering for the fabrication of High Electron Mobility Transistors (HEMTs). The study of the deposited nitrides is conducted by spectroscopy, diffraction, and submicron scale microscope methods. The preparation of the materials is performed using different parameters in terms of power, pressure, temperature, gas, and time. Silicon (Si) and Sapphire (Al2O3) wafers are used as substrates. The chemical composition and surface topography of the samples are analyzed to calculate the materials atomic percentages and to observe the devices surface. The instruments used for the semiconductors characterization are X-ray Photoelectron Spectroscopy (XPS), X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Atomic Force Microscope (AFM). The project focused its attention on the reduction of impurities during the deposition, the controlled thicknesses of the thin-films, the atomic configuration of the alloy AlxGa1-xN, and the uniformity of the surfaces.

  3. Effect of residual Al content on microstructure and mechanical properties of Grade B+Steel for castings for locomotives

    Directory of Open Access Journals (Sweden)

    Wang Kaifeng

    2013-11-01

    Full Text Available The bogie made of Grade B+ steel is one of the most important parts of heavy haul trains. Some accidents were found to be the result of fracture failure of the bogies. It is very important to find the reason why the fracture failure occurred. Because Al was added for the final deoxidation during the smelting process of the Grade B+Steel, residual Al existed to some extent in the castings. High residual Al content in the bogie casting was presumed to be the reason for the fracture. In this work, the influence of residual Al content in the range of 0.015wt.% to 0.3wt.% on the microstructure and mechanical properties of the Grade B+ Steel was studied. The experimental results showed that when the residual Al content is between 0.02wt.% and 0.20wt.%, the mechanical properties of the steel meet the requirements of technical specification for heavy haul train parts, and the fracture is typical plastic fractures. If the residual Al content is less than 0.02wt.%, the microstructures are coarse, and the mechanical properties can not meet the demand of bogie steel castings. When the residual Al content is more than 0.2wt.%, the elongation, reduction of area, and low-temperature impact energy markedly deteriorate. The fracture mode then changes from plastic fracture to cleavage brittle fracture. Therefore, the amount of Al addition for the final deoxidation during the smelting process must be strictly controlled. The optimum addition amount needs to be controlled within the range of 0.02wt.% to 0.20wt.% for the Grade B+Steel.

  4. Status of backthinned AlGaN based focal plane arrays for deep-UV imaging

    Science.gov (United States)

    Reverchon, J.-L.; Lehoucq, G.; Truffer, J.-P.; Costard, E.; Frayssinet, E.; Semond, F.; Duboz, J.-Y.; Giuliani, A.; Réfrégiers, M.; Idir, M.

    2017-11-01

    The achievement of deep ultraviolet (UV) focal plane arrays (FPA) is required for both solar physics [1] and micro electronics industry. The success of solar mission (SOHO, STEREO [2], SDO [3]…), has shown the accuracy of imaging at wavelengths from 10 nm to 140 nm to reveal effects occurring in the sun corona. Deep UV steppers at 13 nm are another demanding imaging technology for the microelectronic industry in terms of uniformity and stability. A third application concerns beam shaping of Synchrotron lines [4]. Consequently, such wavelengths are of prime importance whereas the vacuum UV wavelengths are very difficult to detect due to the dramatic interaction of light with materials. The fast development of nitrides has given the opportunity to investigate AlGaN as a material for UV detection. Camera based on AlGaN present an intrinsic spectral selectivity and an extremely low dark current at room temperature. We have previously presented several FPA dedicated to deep UV based on 320 x 256 pixels of Schottky photodiodes with a pitch of 30 μm [4, 5]. AlGaN is grown on a silicon substrate instead of sapphire substrate only transparent down to 200 nm. After a flip-chip hybridization, silicon substrate and AlGaN basal layer was removed by dry etching. Then, the spectral responsivity of the FPA presented a quantum efficiency (QE) from 5% to 20% from 50 nm to 290 nm when removing the highly doped contact layer via a selective wet etching. This FPA suffered from a low uniformity incompatible with imaging, and a long time response due to variations of conductivity in the honeycomb. We also observed a low rejection of visible. It is probably due to the same honeycomb conductivity enhancement for wavelength shorter than 360 nm, i.e., the band gap of GaN. We will show hereafter an improved uniformity due to the use of a precisely ICP (Inductively Coupled Plasma) controlled process. The final membrane thickness is limited to the desertion layer. Neither access resistance

  5. Extreme Radiation Hardness and Space Qualification of AlGaN Optoelectronic Devices

    International Nuclear Information System (INIS)

    Sun, Ke-Xun; MacNeil, Lawrence; Balakrishnan, Kathik; Hultgren, Eric; Goebel, John; Bilenko, Yuri; Yang, Jinwei; Sun, Wenhong; Shatalov, Max; Hu, Xuhong; Gaska, Remis

    2010-01-01

    Unprecedented radiation hardness and environment robustness are required in the new generation of high energy density physics (HEDP) experiments and deep space exploration. National Ignition Facility (NIF) break-even shots will have a neutron yield of 10 15 or higher. The Europa Jupiter System Mission (EJSM) mission instruments will be irradiated with a total fluence of 10 12 protons/cm 2 during the space journey. In addition, large temperature variations and mechanical shocks are expected in these applications under extreme conditions. Hefty radiation and thermal shields are required for Si and GaAs based electronics and optoelectronics devices. However, for direct illumination and imaging applications, shielding is not a viable option. It is an urgent task to search for new semiconductor technologies and to develop radiation hard and environmentally robust optoelectronic devices. We will report on our latest systematic experimental studies on radiation hardness and space qualifications of AlGaN optoelectronic devices: Deep UV Light Emitting Diodes (DUV LEDs) and solarblind UV Photodiodes (PDs). For custom designed AlGaN DUV LEDs with a central emission wavelength of 255 nm, we have demonstrated its extreme radiation hardness up to 2 x 10 12 protons/cm 2 with 63.9 MeV proton beams. We have demonstrated an operation lifetime of over 26,000 hours in a nitrogen rich environment, and 23,000 hours of operation in vacuum without significant power drop and spectral shift. The DUV LEDs with multiple packaging styles have passed stringent space qualifications with 14 g random vibrations, and 21 cycles of 100K temperature cycles. The driving voltage, current, emission spectra and optical power (V-I-P) operation characteristics exhibited no significant changes after the space environmental tests. The DUV LEDs will be used for photoelectric charge management in space flights. For custom designed AlGaN UV photodiodes with a central response wavelength of 255 nm, we have

  6. Heavy Mg-doping of (Al,Ga)N films for potential applications in deep ultraviolet light-emitting structures

    Science.gov (United States)

    Liang, Y. H.; Towe, E.

    2018-03-01

    Doping of high aluminum-containing (Al,Ga)N thin films has remained a challenging problem that has hindered progress in the development of deep ultraviolet light-emitters. This paper reports on the synthesis and use of heavily doped (Al,Ga)N films in deep ultraviolet (˜274 nm) light-emitting structures; these structures were synthesized by molecular beam epitaxy under liquid-metal growth conditions that facilitate the incorporation of extremely high density of Mg dopant impurities (up to 5 × 1019 cm-3) into aluminum-rich (Al,Ga)N thin films. Prototypical light-emitting diode structures incorporating Al0.7Ga0.3N films doped with Mg impurities that ionize to give free hole carrier concentrations of up to 6 × 1017 cm-3 exhibit external quantum efficiencies of up 0.56%; this is an improvement from previous devices made from molecular beam epitaxy-grown materials. This improvement is believed to be due to the high hole carrier concentration enabled by the relatively low activation energy of 220 meV compared to the expected values of 408-507 meV for Al0.7Ga0.3N films.

  7. Chemical and electrical characteristics of annealed Ni/Au and Ni/Ir/Au contacts on AlGaN

    Energy Technology Data Exchange (ETDEWEB)

    Ngoepe, P.N.M., E-mail: phuti.ngoepe@up.ac.za [Department of Physics, University of Pretoria, Private Bag X20, Hatfield 0028 (South Africa); Meyer, W.E.; Auret, F.D.; Omotoso, E.; Diale, M. [Department of Physics, University of Pretoria, Private Bag X20, Hatfield 0028 (South Africa); Swart, H.C.; Duvenhage, M.M.; Coetsee, E. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein 9300 (South Africa)

    2016-01-01

    The evolution of Ni/Au and Ni/Ir/Au metal contacts deposited on AlGaN was investigated at different annealing temperatures. The samples were studied with electrical and chemical composition techniques. I–V characteristics of the Schottky diodes were optimum after 500 and 600 °C annealing for Ni/Au and Ni/Ir/Au based diodes, respectively. The depth profiles of the contacts were measured by x-ray photoelectron spectroscopy and time of flight secondary ion mass spectroscopy. These chemical composition techniques were used to examine the evolution of the metal contacts in order to verify the influence the metals have on the electrical properties of the diodes. The insertion of Ir as a diffusion barrier between Ni and Au effected the electrical properties, improving the stability of the contacts at high temperatures. Gold diffused into the AlGaN film, degrading the electrical properties of the Ni/Au diode. At 500 °C, the insertion of Ir, however, prevented the in-diffusion of Au into the AlGaN substrate.

  8. Thermodynamic photoinduced disorder in AlGaN nanowires

    KAUST Repository

    Alfaraj, Nasir; Muhammed, Mufasila Mumthaz; Li, Kuang-Hui; Janjua, Bilal; Aljefri, Renad A.; Sun, Haiding; Ng, Tien Khee; Ooi, Boon S.; Roqan, Iman S.; Li, Xiaohang

    2017-01-01

    In this study, we examine thermodynamic photoinduced disorder in AlGaN nanowires through their steady-state and transient photoluminescence properties. We correlate the energy exchange during the photoexcitation and photoemission processes of the light–solid reaction and the generation of photoinduced entropy of the nanowires using temperature-dependent (6 K to 290 K) photoluminescence. We observed an oscillatory trend in the generated entropy of the system below 200 K, with an oscillation frequency that was significantly lower than what we have previously observed in InGaN/GaN nanowires. In contrast to the sharp increase in generated entropy at temperatures close to room temperature in InGaN/GaN nanowires, an insignificant increase was observed in AlGaN nanowires, indicating lower degrees of disorder-induced uncertainty in the wider bandgap semiconductor. We conjecture that the enhanced atomic ordering in AlGaN caused lower degrees of disorder-induced uncertainty related to the energy of states involved in thermionic transitions; in keeping with this conjecture, we observed lower oscillation frequency below 200 K and a stable behavior in the generated entropy at temperatures close to room temperature.

  9. Thermodynamic photoinduced disorder in AlGaN nanowires

    KAUST Repository

    Alfaraj, Nasir

    2017-12-13

    In this study, we examine thermodynamic photoinduced disorder in AlGaN nanowires through their steady-state and transient photoluminescence properties. We correlate the energy exchange during the photoexcitation and photoemission processes of the light–solid reaction and the generation of photoinduced entropy of the nanowires using temperature-dependent (6 K to 290 K) photoluminescence. We observed an oscillatory trend in the generated entropy of the system below 200 K, with an oscillation frequency that was significantly lower than what we have previously observed in InGaN/GaN nanowires. In contrast to the sharp increase in generated entropy at temperatures close to room temperature in InGaN/GaN nanowires, an insignificant increase was observed in AlGaN nanowires, indicating lower degrees of disorder-induced uncertainty in the wider bandgap semiconductor. We conjecture that the enhanced atomic ordering in AlGaN caused lower degrees of disorder-induced uncertainty related to the energy of states involved in thermionic transitions; in keeping with this conjecture, we observed lower oscillation frequency below 200 K and a stable behavior in the generated entropy at temperatures close to room temperature.

  10. Physical and electrical characterizations of AlGaN/GaN MOS gate stacks with AlGaN surface oxidation treatment

    Science.gov (United States)

    Yamada, Takahiro; Watanabe, Kenta; Nozaki, Mikito; Shih, Hong-An; Nakazawa, Satoshi; Anda, Yoshiharu; Ueda, Tetsuzo; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2018-06-01

    The impacts of inserting ultrathin oxides into insulator/AlGaN interfaces on their electrical properties were investigated to develop advanced AlGaN/GaN metal–oxide–semiconductor (MOS) gate stacks. For this purpose, the initial thermal oxidation of AlGaN surfaces in oxygen ambient was systematically studied by synchrotron radiation X-ray photoelectron spectroscopy (SR-XPS) and atomic force microscopy (AFM). Our physical characterizations revealed that, when compared with GaN surfaces, aluminum addition promotes the initial oxidation of AlGaN surfaces at temperatures of around 400 °C, followed by smaller grain growth above 850 °C. Electrical measurements of AlGaN/GaN MOS capacitors also showed that, although excessive oxidation treatment of AlGaN surfaces over around 700 °C has an adverse effect, interface passivation with the initial oxidation of the AlGaN surfaces at temperatures ranging from 400 to 500 °C was proven to be beneficial for fabricating high-quality AlGaN/GaN MOS gate stacks.

  11. Relationship between Al content and substitution mechanism of Al-bearing anhydrous bridgmanites

    Science.gov (United States)

    Noda, M.; Inoue, T.; Kakizawa, S.

    2017-12-01

    It is considered that two substitution mechanisms, Tschermak substitution and oxygen vacancy substitution, exist in MgSiO3 bridgmanite for the incorporation of Al in anhydrous condition. Kubo and Akaogi (2000) has conducted the phase equilibrium experiment in the system MgSiO3-Al2O3, and established the phase diagram up to 28 GPa. However the careful observation in the bridgmanite shows that the chemical compositions are slightly deviated from Tschermak substitution join. The same tendency can be also observed in the run products by Irifune et al. (1996). This result indicates that pure Tschermak substitution bridgmanite cannot be stable even in the MgSiO3-Al2O3 join experiment. However, the previous studies used powder samples as the starting materials, so the absorbed water may affect the results. Therefore, we tried to conduct the experiment in the join MgSiO3-Al2O3 in extremely anhydrous condition to clarify whether the pure Tschermak substitution bridgmanite can be stable or not. In addition, we also examined the stability of oxygen vacancy bridgmanite in the extremely anhydrous condition for the comparison. The high pressure synthesis experiments were conducted at 28 GPa and 1600-1700° for 1hour using a Kawai-type multi-anvil apparatus. Four different Al content samples were prepared as the starting materials along the ideal substitution line of Tschermak (Al=0.025, 0.05, 0.1, 0.15 mol) and oxygen-vacancy (Al=0.025, 0.05, 0.075, 0.1 mol) substitutions, respectively (when total cation of 2). The glass rods were used as the starting materials to eliminate the absorbed water on the sample surface. The chemical compositions of the synthesized bridgmanite could not be measured by EPMA because of small grain size less than submicron. Therefore the chemical compositions were estimated from the result of the XRD pattern by subtracting the amount of the other phases. The estimated chemical compositions of Tschermak substitution bridgmanites were consistent with the

  12. Effect of Al content on critical CTOD properties in heat affected zone of C-Mn microalloyed steel. Teitanso teigokin koyosetsu netsu eikyobu no genkai CTOD tokusei ni oyobosu Al ganyuryo no eikyo

    Energy Technology Data Exchange (ETDEWEB)

    Fukada, Y.; Komizo, Y. (Sumitomo Metal Industries Ltd., Osaka (Japan))

    1992-08-05

    Two types of molten alloys specimen with a base of 0.10%C-0.20%Si-1.40%Mn-0.01%Ti system and varied Al content, were studied. The critical crack tip opening displacement(CTOD) properties in heat effected zone(HAZ) of extreme low Al content steel was stable at. extremely low temperature and there was no formation of M-A. Fine ferrite has a texture of [alpha] main body and it has been thought that the the change in the CTOD properties with the variation in Al content has been due to the difference in the texture. In case of Al content steel plate, the interfacial energy has been decreased due to excessive carbon concentration at [gamma] /[alpha] interface, M-A formation has been easier by the suppression of [alpha] transformation. In case of extremely low Al content steel plate, [alpha] transformation has been promoted and cementite deposition has been estimated from a small amount. of left [gamma] of extremely high carbon concentration. As for SH-CCT diagram of extremely low Al content steel plate, compare to Al content steel plate, [alpha] noze has shifted toward shorter time and formation of [alpha] has been easier within the normal welding cooling rate, and microstructures of [alpha] texture have formed in HAZ. 21 refs., 12 figs., 1 tab.

  13. Luminescence dynamics in AlGaN with AlN content of 20%

    KAUST Repository

    Soltani, Sonia; Bouzidi, Mouhamed; Touré , Alhousseynou; Gerhard, Marina; Halidou, Ibrahim; Chine, Zied; El Jani, Belgacem; Shakfa, Mohammad Khaled

    2016-01-01

    Optical properties and carrier dynamics of an AlGaN layer with an AlN content of 20% have been studied using time-resolved photoluminescence (TR-PL). Despite the high density of defects due to the relatively high AlN content, an intense PL emission from the sample has been detected. Low-temperature PL spectra exhibit several features, accompanied by a strong emission-wavelength dependence of the PL decay time. A significant red-shift of more than 200 meV from the band edge is recorded for the PL emission from localized states. Temperature-dependent PL spectra of the sample are dominated by the emission from localized states and, furthermore, show a relatively slight decrease by almost an order of magnitude with increasing temperature from 45 to 300 K. Our observations indicate strong, spatial localization effects of carriers, resulting in an increase in the radiative recombination rate.

  14. Luminescence dynamics in AlGaN with AlN content of 20%

    KAUST Repository

    Soltani, Sonia

    2016-12-15

    Optical properties and carrier dynamics of an AlGaN layer with an AlN content of 20% have been studied using time-resolved photoluminescence (TR-PL). Despite the high density of defects due to the relatively high AlN content, an intense PL emission from the sample has been detected. Low-temperature PL spectra exhibit several features, accompanied by a strong emission-wavelength dependence of the PL decay time. A significant red-shift of more than 200 meV from the band edge is recorded for the PL emission from localized states. Temperature-dependent PL spectra of the sample are dominated by the emission from localized states and, furthermore, show a relatively slight decrease by almost an order of magnitude with increasing temperature from 45 to 300 K. Our observations indicate strong, spatial localization effects of carriers, resulting in an increase in the radiative recombination rate.

  15. Effect of surface pretreatment on interfacial chemical bonding states of atomic layer deposited ZrO2 on AlGaN

    International Nuclear Information System (INIS)

    Ye, Gang; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Ang, Kian Siong; Wang, Hong; Ng, Serene Lay Geok; Ji, Rong; Liu, Zhi Hong

    2015-01-01

    Atomic layer deposition (ALD) of ZrO 2 on native oxide covered (untreated) and buffered oxide etchant (BOE) treated AlGaN surface was analyzed by utilizing x-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy. Evidenced by Ga–O and Al–O chemical bonds by XPS, parasitic oxidation during deposition is largely enhanced on BOE treated AlGaN surface. Due to the high reactivity of Al atoms, more prominent oxidation of Al atoms is observed, which leads to thicker interfacial layer formed on BOE treated surface. The results suggest that native oxide on AlGaN surface may serve as a protecting layer to inhibit the surface from further parasitic oxidation during ALD. The findings provide important process guidelines for the use of ALD ZrO 2 and its pre-ALD surface treatments for high-k AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors and other related device applications

  16. Effects of Al content on structure and mechanical properties of hot-rolled ZrTiAlV alloys

    International Nuclear Information System (INIS)

    Liang, S.X.; Yin, L.X.; Che, H.W.; Jing, R.; Zhou, Y.K.; Ma, M.Z.; Liu, R.P.

    2013-01-01

    Highlights: • Phase structure is greatly dependent on the Al content. • Intermetallic compound will precipitates while Al content is over 6.9 wt%. • Equiaxed α-phase grains present in the hot-rolled alloy with 6.9 wt% Al. • Alloys with Al content from 3.3 wt% to 5.6 wt% have good mechanical properties. - Abstract: Zirconium alloys show attractive properties for astronautic applications where the most important factors are anti-irradiation, corrosion resistance, anti-oxidant, very good strength-to-weight ratio. The effects of Al content (2.2–6.9 wt%) on structure and mechanical properties of the hot-rolled ZrTiAlV alloy samples were investigated in this study. Each sample of the hot-rolled ZrTiAlV alloys with Al contents from 2.2 wt% to 5.6 wt% is composed of the α phase and β phase, meanwhile, the relative content of the α phase increased with the Al content. However, the (ZrTi) 3 Al intermetallic compound was observed as the Al content increased to 6.9 wt%. Changes of phase compositions and structure with Al content distinctly affected mechanical properties of ZrTiAlV alloys. Yield strength of the alloy with 2.2 wt% Al is below 200 MPa. As Al content increased to 5.6 wt%, the yield strength, tensile strength and elongation of the examined alloy are 1088 MPa, 1256 MPa and 8%, respectively. As Al content further increased to 6.9 wt%, a rapid decrease in ductility was observed as soon as the (ZrTi) 3 Al intermetallic compound precipitated. Results show that the ZrTiAlV alloys with Al contents between 3.3 wt% and 5.6 wt% have excellent mechanical properties

  17. AlGaN nanocolumns and AlGaN/GaN/AlGaN nanostructures grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Ristic, J.; Sanchez-Garcia, M.A.; Ulloa, J.M.; Calleja, E. [Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria, 28040 Madrid (Spain); Sanchez-Paramo, J.; Calleja, J.M. [Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Jahn, U.; Trampert, A.; Ploog, K.H. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2002-12-01

    This work reports on the characterization of hexagonal, single crystal AlGaN nanocolumns with diameters in the range of 30 to 100 nm grown by molecular beam epitaxy on Si(111) substrates. The change of the flux ratio between the Al and the total III-element controls the alloy composition. The Al composition trend versus the Al flux is consistent both with the E{sub 2} phonon energy values measured by inelastic light scattering and the luminescence emission peaks position. High quality low dimensional AlGaN/GaN/AlGaN heterostructures with five GaN quantum discs, 2 and 4 nm thick, embedded into the AlGaN columns, were designed in order to study the quantum confinement effects. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

  18. Magnetic and structural properties of manganese doped (Al,Ga)N studied with emission Mössbauer spectroscopy

    CERN Multimedia

    Gallium nitride (GaN) and related compounds form a unique class of semiconductors with extraordinary qualities in terms of their crystal structure, optical properties, and electrical properties. These novel properties have made them useful in a wide range of applications in optoelectronic and high-frequency devices such as light emitting diodes, laser diodes and high power field effect transistors. When doped with a few percents of Mn and in the presence of free holes, GaN has been predicted to be a magnetic semiconductor with Curie temperature above room temperature. Mixed semiconductors of Al$_{x}$Ga$_{1-x}$N (AlGaN) composition, give rise to unexpected and critical magnetic and photonic functionalities when doped with magnetic ion species. Here we propose an experiment on very thoroughly characterised AlGaN doped with Mn utilising extremely dilute $^{57}$Mn (T$_{1/2}$=1.5 min), $^{57}$Co (T$_{1/2}$ = 272 d) and $^{119}$In (T$_{1/2}$=2.1 min) implantations, in order to perform $^{57}$Fe and $^{119}$Sn emiss...

  19. Influence of Al content on the corrosion resistance of micro-alloyed hot rolled steel as a function of grain size

    Science.gov (United States)

    Qaban, Abdullah; Naher, Sumsun

    2018-05-01

    High-strength low-alloy steel (HSLA) has been widely used in many applications involving automobiles, aerospace, construction, and oil and gas pipelines due to their enhanced mechanical and chemical properties. One of the most critical elements used to improve these properties is Aluminium. This work will explore the effect of Al content on the corrosion behaviour of hot rolled high-strength low-alloy steel as a function of grain size. The method of investigation employed was weight loss technique. It was obvious that the increase in Al content enhanced corrosion resistance through refinement of grain size obtained through AlN precipitation by pinning grain boundaries and hindering their growth during solidification which was found to be beneficial in reducing corrosion rate.

  20. Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer deposition

    International Nuclear Information System (INIS)

    Ye, Gang; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Ang, Kian Siong; Wang, Hong; Ng, Serene Lay Geok; Ji, Rong; Liu, Zhi Hong

    2015-01-01

    The effect of post-deposition annealing on chemical bonding states at interface between Al 0.5 Ga 0.5 N and ZrO 2 grown by atomic layer deposition (ALD) is studied by angle-resolved x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. It has been found that both of Al-O/Al 2p and Ga-O/Ga 3d area ratio decrease at annealing temperatures lower than 500 °C, which could be attributed to “clean up” effect of ALD-ZrO 2 on AlGaN. Compared to Ga spectra, a much larger decrease in Al-O/Al 2p ratio at a smaller take-off angle θ is observed, which indicates higher effectiveness of the passivation of Al-O bond than Ga-O bond through “clean up” effect near the interface. However, degradation of ZrO 2 /AlGaN interface quality due to re-oxidation at higher annealing temperature (>500 °C) is also found. The XPS spectra clearly reveal that Al atoms at ZrO 2 /AlGaN interface are easier to get oxidized as compared with Ga atoms

  1. Hydrogen Sulfide Alleviates Aluminum Toxicity via Decreasing Apoplast and Symplast Al Contents in Rice

    Directory of Open Access Journals (Sweden)

    Chun Q. Zhu

    2018-03-01

    Full Text Available Hydrogen sulfide (H2S plays a vital role in Al3+ stress resistance in plants, but the underlying mechanism is unclear. In the present study, pretreatment with 2 μM of the H2S donor NaHS significantly alleviated the inhibition of root elongation caused by Al toxicity in rice roots, which was accompanied by a decrease in Al contents in root tips under 50 μM Al3+ treatment. NaHS pretreatment decreased the negative charge in cell walls by reducing the activity of pectin methylesterase and decreasing the pectin and hemicellulose contents in rice roots. This treatment also masked Al-binding sites in the cell wall by upregulating the expression of OsSATR1 and OsSTAR2 in roots and reduced Al binding in the cell wall by stimulating the expression of the citrate acid exudation gene OsFRDL4 and increasing the secretion of citrate acid. In addition, NaHS pretreatment decreased the symplasmic Al content by downregulating the expression of OsNRAT1, and increasing the translocation of cytoplasmic Al to the vacuole via upregulating the expression of OsALS1. The increment of antioxidant enzyme [superoxide dismutase (SOD, ascorbate peroxidase (APX, catalase (CAT, and peroxidase (POD] activity with NaHS pretreatment significantly decreased the MDA and H2O2 content in rice roots, thereby reducing the damage of Al3+ toxicity on membrane integrity in rice. H2S exhibits crosstalk with nitric oxide (NO in response to Al toxicity, and through reducing NO content in root tips to alleviate Al toxicity. Together, this study establishes that H2S alleviates Al toxicity by decreasing the Al content in the apoplast and symplast of rice roots.

  2. Epitaxial Gd2O3 on GaN and AlGaN: a potential candidate for metal oxide semiconductor based transistors on Si for high power application

    Science.gov (United States)

    Ghosh, Kankat; Das, S.; Khiangte, K. R.; Choudhury, N.; Laha, Apurba

    2017-11-01

    We report structural and electrical properties of hexagonal Gd2O3 grown epitaxially on GaN/Si (1 1 1) and AlGaN/GaN/Si(1 1 1) virtual substrates. GaN and AlGaN/GaN heterostructures were grown on Si(1 1 1) substrates by plasma assisted molecular beam epitaxy (PA-MBE), whereas the Gd2O3 layer was grown by the pulsed laser ablation (PLA) technique. Initial structural characterizations show that Gd2O3 grown on III-nitride layers by PLA, exhibit a hexagonal structure with an epitaxial relationship as {{≤ft[ 0 0 0 1 \\right]}G{{d2}{{O}3}}}||{{≤ft[ 0 0 0 1 \\right]}GaN} and {{≤ft[ 1 \\bar{1} 0 0 \\right]}G{{d2}{{O}3}}}||{{≤ft[ 1 \\bar{1} 0 0 \\right]}GaN} . X-ray photoelectron measurements of the valence bands revealed that Gd2O3 exhibits band offsets of 0.97 eV and 0.4 eV, for GaN and Al0.3Ga0.7N, respectively. Electrical measurements such as capacitance-voltage and leakage current characteristics further confirm that epi-Gd2O3 on III-nitrides could be a potential candidate for future metal-oxide-semiconductor (MOS)-based transistors also for high power applications in radio frequency range.

  3. Noise characterization of enhancement-mode AlGaN graded barrier MIS-HEMT devices

    Science.gov (United States)

    Mohanbabu, A.; Saravana Kumar, R.; Mohankumar, N.

    2017-12-01

    This paper reports a systematic theoretical study on the microwave noise performance of graded AlGaN/GaN metal-insulator semiconductor high-electron mobility transistors (MIS-HEMTs) built on an Al2O3 substrate. The HfAlOx/AlGaN/GaN MIS-HEMT devices designed for this study show an outstanding small signal analog/RF and noise performance. The results on 1 μm gate length device show an enhancement mode operation with threshold voltage, VT = + 5.3 V, low drain leakage current, Ids,LL in the order of 1 × 10-9 A/mm along with high current gain cut-off frequency, fT of 17 GHz and maximum oscillation frequency fmax of 47 GHz at Vds = 10 V. The device Isbnd V and low-frequency noise estimation of the gate and drain noise spectral density and their correlation are evaluated using a Green's function method under different biasing conditions. The devices show a minimum noise figure (NFmin) of 1.053 dB in combination with equivalent noise resistance (Rn) of 23 Ω at 17 GHz, at Vgs = 6 V and Vds = 5 V which is relatively low and is suitable for broad-band low-noise amplifiers. This study shows that the graded AlGaN MIS-HEMT with HfAlOX gate insulator is appropriate for application requiring high-power and low-noise.

  4. Alloy scattering dependence of electron transport in AlGaN

    International Nuclear Information System (INIS)

    Yarar, Z.; Ozdemir, M.

    2010-01-01

    The electron transport and velocity characteristics in AlGaN are examined using an ensemble Monte Carlo simulation method. A three valley band structure model where nonparabolicity effects are considered in all valleys is used for Monte Carlo calculations. All of the major electron scattering interactions like acoustic and optical phonon, intervaley, ionized impurity and alloy disorder scatterings are included in the calculations. The velocity-applied electric field characteristics are analyzed as a function of Al molar fraction and temperature in the ranges of x=0.1 to x=0.5 and 77 K to 500 K, respectively. The velocity overshoot is clearly observed and the population of valleys seems well-matched with the occupancy of valleys in AlGaN. The results of electron steady state velocity-field curves are found that the alloy disorder scattering has important effects on the electron transport characteristics of AlGaN.

  5. InGaN nanoinclusions in an AlGaN matrix

    International Nuclear Information System (INIS)

    Sizov, V. S.; Tsatsul'nikov, A. F.; Lundin, V. V.

    2008-01-01

    GaN-based structures with InGaN quantum dots in the active region emitting in the near-ultraviolet region are studied. In this study, two types of structures, namely, with InGaN quantum dots in a GaN or AlGaN matrix, are compared. Photoluminescence spectra are obtained for both types of structures in a temperature range of 80-300 K and at various pumping densities, and electroluminescence spectra are obtained for light-emitting (LED) structures with various types of active region. It is shown that the structures with quantum dots in the AlGaN matrix are more stable thermally due to the larger localization energy compared with quantum dots in the GaN matrix. Due to this, the LED structures with quantum dots in an AlGaN matrix are more effective.

  6. AlGaN channel field effect transistors with graded heterostructure ohmic contacts

    Science.gov (United States)

    Bajaj, Sanyam; Akyol, Fatih; Krishnamoorthy, Sriram; Zhang, Yuewei; Rajan, Siddharth

    2016-09-01

    We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFETs) with heterostructure engineered low-resistance ohmic contacts. The low intrinsic electron affinity of AlN (0.6 eV) leads to large Schottky barriers at the metal-AlGaN interface, resulting in highly resistive ohmic contacts. In this work, we use a reverse compositional graded n++ AlGaN contact layer to achieve upward electron affinity grading, leading to a low specific contact resistance (ρsp) of 1.9 × 10-6 Ω cm2 to n-Al0.75Ga0.25N channels (bandgap ˜5.3 eV) with non-alloyed contacts. We also demonstrate UWBG Al0.75Ga0.25N channel MISFET device operation employing the compositional graded n++ ohmic contact layer and 20 nm atomic layer deposited Al2O3 as the gate-dielectric.

  7. AlGaN Channel Transistors for Power Management and Distribution

    Science.gov (United States)

    VanHove, James M.

    1996-01-01

    Contained within is the Final report of a Phase 1 SBIR program to develop AlGaN channel junction field effect transistors (JFET). The report summarizes our work to design, deposit, and fabricate JFETS using molecular beam epitaxy growth AlGaN. Nitride growth is described using a RF atomic nitrogen plasma source. Processing steps needed to fabricate the device such as ohmic source-drain contacts, reactive ion etching, gate formation, and air bride fabrication are documented. SEM photographs of fabricated power FETS are shown. Recommendations are made to continue the effort in a Phase 2 Program.

  8. Surface-Passivated AlGaN Nanowires for Enhanced Luminescence of Ultraviolet Light Emitting Diodes

    KAUST Repository

    Sun, Haiding; Shakfa, Mohammad Khaled; Muhammed, Mufasila; Janjua, Bilal; Li, Kuang-Hui; Lin, Ronghui; Ng, Tien Khee; Roqan, Iman S.; Ooi, Boon S.; Li, Xiaohang

    2017-01-01

    investigation on the samples reveals almost intact nanowire structures after the passivation process. We demonstrated an approximately 49.7% enhancement in the ultraviolet light output power after 30-s KOH treatment on AlGaN nanowires grown on titanium

  9. Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(lll) Substrate

    International Nuclear Information System (INIS)

    Wei Meng; Wang Xiaoliang; Pan Xu; Xiao Hongling; Wang Cuimei; Zhang Minglan; Wang Zhanguo

    2011-01-01

    This paper investigated the influence of AlGaN buffer growth temperature on strain status and crystal quality of the GaN film on Si(111) sbustrates by metal organic chemical vapor deposition. It was demonstrated by the optical microscopy that AlGaN buffer gorwth temperature had a remarkable effect on compensating tensil stress in top GaN layer and preventing the formation of cracks. X-ray diffraction and atomic force microscopy analysis showed crystal quality and surface morphology of the GaN epilayer could be improved through increasing AlGaN buffer growth temperature. 1μm crack-free GaN epilayer on Si (111) substrates was obtained with graded AlGaN buffer layer at optimized temperature of 1050 deg. C. Transmission electron microscopy analysis revealed that a significant reduction in threading dislocations was achieved in GaN epilayer.

  10. Molecular beam epitaxial growth and characterization of Al(Ga)N nanowire deep ultraviolet light emitting diodes and lasers

    International Nuclear Information System (INIS)

    Mi, Z; Zhao, S; Djavid, M; Liu, X; Kang, J; Woo, S Y; Bugnet, M; Botton, G A; Kong, X; Guo, H; Ji, W; Liu, Z

    2016-01-01

    We report on the detailed molecular beam epitaxial growth and characterization of Al(Ga)N nanowire heterostructures on Si and their applications for deep ultraviolet light emitting diodes and lasers. The nanowires are formed under nitrogen-rich conditions without using any metal catalyst. Compared to conventional epilayers, Mg-dopant incorporation is significantly enhanced in nearly strain- and defect-free Al(Ga)N nanowire structures, leading to efficient p -type conduction. The resulting Al(Ga)N nanowire LEDs exhibit excellent performance, including a turn-on voltage of ∼5.5 V for an AlN nanowire LED operating at 207 nm. The design, fabrication, and performance of an electrically injected AlGaN nanowire laser operating in the UV-B band is also presented. (paper)

  11. Corrosion behaviors of Mg and its alloys with different Al contents in a modified simulated body fluid

    International Nuclear Information System (INIS)

    Wen Zhaohui; Wu Changjun; Dai Changsong; Yang Feixia

    2009-01-01

    The corrosion behaviors of pure magnesium (Mg) and three Mg alloys with different Al contents were investigated in a modified simulated body fluid (m-SBF) through immersion tests, Tafel experiments, and electrochemical impedance spectroscopic (EIS) experiments. The immersion results show that the corrosion rates (CRs) of the four samples were in an order of AZ91D ct ) of the three magnesium alloys initially increased and then decreased while the R ct of pure Mg was kept lower within 24 h. The results of a scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) show that pure Mg and three alloys were heterogeneously corroded in the m-SBF. The corrosion of pure Mg, which showed a more uniform corrosion appearance, resulted from localized corrosion over the entire surface. Alloy AZ91D (of 8.5-9.5 wt.% Al) showed relatively uniform corrosion morphology and the β-Mg 12 Al 17 precipitates in alloy AZ91D were more homogeneously and continuously distributed along the grain boundaries. Obvious corrosion pits were found on the surface of alloy AZ61 and AZ31. The corrosion pits of alloy AZ61 were shallower than those of alloy AZ31. Alloy AZ61 (of 5.8-7.2 wt.% Al) possessed more Al 8 Mn 5 and a little β-Mg 12 Al 17 presented along the grain boundary heterogeneously and discontinuously. Al 8 Mn 5 was the main phase of the AZ31 alloy (of 2.5-3.5 wt.% Al) dispersed into the matrix. In conclusion, the microstructure and the Al content in the α-Mg (Al) matrix significantly affected the corrosion properties of the alloys in the m-SBF. With the increase in Al content, the corrosion resistances of the samples were improved.

  12. Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Reich, Christoph, E-mail: Christoph.Reich@tu-berlin.de; Guttmann, Martin; Wernicke, Tim; Mehnke, Frank; Kuhn, Christian [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, Berlin 10623 (Germany); Feneberg, Martin; Goldhahn, Rüdiger [Institut für Experimentelle Physik, Otto-von-Guericke-Universität, Universitätsplatz 2, Magdeburg 39106 (Germany); Rass, Jens; Kneissl, Michael [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, Berlin 10623 (Germany); Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, Berlin 12489 (Germany); Lapeyrade, Mickael; Einfeldt, Sven; Knauer, Arne; Kueller, Viola; Weyers, Markus [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, Berlin 12489 (Germany)

    2015-10-05

    The optical polarization of emission from ultraviolet (UV) light emitting diodes (LEDs) based on (0001)-oriented Al{sub x}Ga{sub 1−x}N multiple quantum wells (MQWs) has been studied by simulations and electroluminescence measurements. With increasing aluminum mole fraction in the quantum well x, the in-plane intensity of transverse-electric (TE) polarized light decreases relative to that of the transverse-magnetic polarized light, attributed to a reordering of the valence bands in Al{sub x}Ga{sub 1−x}N. Using k ⋅ p theoretical model calculations, the AlGaN MQW active region design has been optimized, yielding increased TE polarization and thus higher extraction efficiency for bottom-emitting LEDs in the deep UV spectral range. Using (i) narrow quantum wells, (ii) barriers with high aluminum mole fractions, and (iii) compressive growth on patterned aluminum nitride sapphire templates, strongly TE-polarized emission was observed at wavelengths as short as 239 nm.

  13. Assembly of phosphonic acids on GaN and AlGaN

    Energy Technology Data Exchange (ETDEWEB)

    Simpkins, B S; Stine, R; Theodore, N D; Pehrsson, P E [Chemistry Division, Naval Research Laboratory, Washington DC (United States); Hong, S [Thomas Jefferson High School, McClean, VA (United States); Maekinen, A J [Optical Sciences Division, Naval Research Laboratory, Washington, DC (United States); Mastro, M A; Eddy, C R Jr [Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC (United States)

    2010-01-13

    Self-assembled monolayers of octadecylphosphonic acid and 16-phosphonohexadecanoic acid (PHDA) were formed on the semiconductor substrates gallium nitride (GaN) and aluminium gallium nitride (AlGaN). The presence of the molecular layers was verified through x-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy. Structural information was acquired with infrared spectroscopy which verified the bonding orientation of the carboxyl-containing PHDA. The impact of the molecular layers on the channel conductivity and the surface electronic structure of an AlGaN/GaN heterostructure was measured. Our results indicate that pinning of the surface Fermi level prohibits modification of the channel conductivity by the layer. However, a surface dipole of {approx}0.8 eV is present and associated with both phosphonic acid layers. These results are of direct relevance to field-effect-based biochemical sensors and metal-semiconductor contact formation for this system and provide a fundamental basis for further applications of GaN and AlGaN technology in the fields of biosensing and microelectronics.

  14. Corrosion behaviors of Mg and its alloys with different Al contents in a modified simulated body fluid

    Energy Technology Data Exchange (ETDEWEB)

    Wen Zhaohui [Department of Ultrasound, First Affiliated Hospital of Harbin Medical University, Harbin 150001 (China); Wu Changjun, E-mail: wucj163@126.co [Department of Ultrasound, First Affiliated Hospital of Harbin Medical University, Harbin 150001 (China); Dai Changsong, E-mail: changsd@hit.edu.c [School of Chemistry Engineering and Technology, Harbin Institute of Technology, Harbin 150001 (China); Yang Feixia [School of Chemistry Engineering and Technology, Harbin Institute of Technology, Harbin 150001 (China)

    2009-11-20

    The corrosion behaviors of pure magnesium (Mg) and three Mg alloys with different Al contents were investigated in a modified simulated body fluid (m-SBF) through immersion tests, Tafel experiments, and electrochemical impedance spectroscopic (EIS) experiments. The immersion results show that the corrosion rates (CRs) of the four samples were in an order of AZ91D < AZ61 < AZ31 < pure Mg after immersion for 1 day. With an increase in immersion time, their corrosion rates decreased and then a stable stage was reached after 16 days. The order of CRs of the four samples changed to AZ91D < pure Mg < AZ61 < AZ31 after immersion for 24 days. The results of EIS experiments indicate that the charge transfer resistance (R{sub ct}) of the three magnesium alloys initially increased and then decreased while the R{sub ct} of pure Mg was kept lower within 24 h. The results of a scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) show that pure Mg and three alloys were heterogeneously corroded in the m-SBF. The corrosion of pure Mg, which showed a more uniform corrosion appearance, resulted from localized corrosion over the entire surface. Alloy AZ91D (of 8.5-9.5 wt.% Al) showed relatively uniform corrosion morphology and the {beta}-Mg{sub 12}Al{sub 17} precipitates in alloy AZ91D were more homogeneously and continuously distributed along the grain boundaries. Obvious corrosion pits were found on the surface of alloy AZ61 and AZ31. The corrosion pits of alloy AZ61 were shallower than those of alloy AZ31. Alloy AZ61 (of 5.8-7.2 wt.% Al) possessed more Al{sub 8}Mn{sub 5} and a little {beta}-Mg{sub 12}Al{sub 17} presented along the grain boundary heterogeneously and discontinuously. Al{sub 8}Mn{sub 5} was the main phase of the AZ31 alloy (of 2.5-3.5 wt.% Al) dispersed into the matrix. In conclusion, the microstructure and the Al content in the {alpha}-Mg (Al) matrix significantly affected the corrosion properties of the alloys in the m-SBF. With the increase

  15. Simulation for spectral response of solar-blind AlGaN based p-i-n photodiodes

    Science.gov (United States)

    Xue, Shiwei; Xu, Jintong; Li, Xiangyang

    2015-04-01

    In this article, we introduced how to build a physical model of refer to the device structure and parameters. Simulations for solar-blind AlGaN based p-i-n photodiodes spectral characteristics were conducted in use of Silvaco TCAD, where device structure and parameters are comprehensively considered. In simulation, the effects of polarization, Urbach tail, mobility, saturated velocities and lifetime in AlGaN device was considered. Especially, we focused on how the concentration-dependent Shockley-Read-Hall (SRH) recombination model affects simulation results. By simulating, we analyzed the effects in spectral response caused by TAUN0 and TAUP0, and got the values of TAUN0 and TAUP0 which can bring a result coincides with test results. After that, we changed their values and made the simulation results especially the part under 255 nm performed better. In conclusion, the spectral response between 200 nm and 320 nm of solar-blind AlGaN based p-i-n photodiodes were simulated and compared with test results. We also found that TAUN0 and TAUP0 have a large impact on spectral response of AlGaN material.

  16. Radiation damage resistance of AlGaN detectors for applications in the extreme-ultraviolet spectral range

    Energy Technology Data Exchange (ETDEWEB)

    Barkusky, Frank; Peth, Christian; Bayer, Armin; Mann, Klaus [Laser-Laboratorium-Goettingen e.V., Hans-Adolf-Krebs-Weg 1, D-37077 Goettingen (Germany); John, Joachim; Malinowski, Pawel E. [Interuniversity MicroElectronic Center (IMEC), Kapeldreef 75, B-3001 Leuven (Belgium)

    2009-09-15

    We report on the fabrication of aluminum gallium nitride (AlGaN) Schottky-photodiode-based detectors. AlGaN layers were grown using metal-organic chemical vapor deposition (MOCVD) on Si(111) wafers. The diodes were characterized at a wavelength of 13.5 nm using a table-top extreme-ultraviolet (EUV) radiation source, consisting of a laser-produced xenon plasma and a Schwarzschild objective. The responsivity of the diodes was tested between EUV energies ranging from 320 nJ down to several picojoules. For low fluences, a linear responsivity of 7.14 mAs/J could be determined. Saturation starts at approximately 1 nJ, merging into a linear response of 0.113 mAs/J, which could be attributed to the photoeffect on the Au electrodes on top of the diode. Furthermore, degradation tests were performed up to an absolute dose of 3.3x10{sup 19} photons/cm{sup 2}. AlGaN photodiodes were compared to commercially available silicon-based photodetectors. For AlGaN diodes, responsivity does not change even for the highest EUV dose, whereas the response of the Si diode decreases linearly to {approx}93% after 2x10{sup 19} photons/cm{sup 2}.

  17. The influences of Al content on the microstructure and mechanical properties of as-cast Mg-6Zn magnesium alloys

    International Nuclear Information System (INIS)

    Zhang, Yu; Huang, Xiaofeng; Ma, Zhenduo; Li, Ya; Guo, Feng; Yang, Jianchang; Ma, Ying; Hao, Yuan

    2017-01-01

    Mg-6Zn magnesium alloys microalloyed with varying Al content (0, 1, 3, 5 and 7 wt%) were prepared by permanent mould casting. The effects of Al on the microstructure and mechanical properties of as-cast Mg-6Zn alloy were characterized with an optical microscope (OM), a scanning electron microscope (SEM) equipped with energy dispersive spectroscope (EDS), an X-ray diffractometer (XRD) and mechanical tests at room temperature, respectively. The experimental results indicate that the grain sizes do not decline obviously while the amount of eutectic phase and the secondary dendrite arm spacing (SDAS) of the alloys gradually increase when the Al content exceeds 3%. The main phases α-Mg, MgZn 2 , Mg 2 Zn 3 , Mg 7 Zn 3 , MgZn, Mg 32 (Al, Zn) 49 and Mg 17 Al 12 are found in these alloys. A higher addition of Al (≥5 wt%) causes the formation of the Mg 17 Al 12 , meanwhile, the partial morphology of some eutectic phases is modified into lamellar formation, which has an adverse effect on mechanical properties of the Al-containing alloys. The mechanical testing reveals that, the tensile properties are gradually improved within the range of 0 ~ 3%Al, and the maximum values of ultimate tensile strength (UTS, 214 MPa) and elongation (EL, 8.7%) are simultaneously obtained from the alloy with 3% Al, which increases by 21 MPa and 16.0% compared with that of the ZA60 alloy, respectively. Fracture analysis demonstrates that quasi-cleavage fracture, inter-granular and trans-granular fracture are dominant modes in the alloy with additions of 0, 1, 3 wt% Al. In contrast, the rupture mechanisms of the other investigated alloys belong to cleavage and inter-granular fracture modes.

  18. The influences of Al content on the microstructure and mechanical properties of as-cast Mg-6Zn magnesium alloys

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yu; Huang, Xiaofeng, E-mail: huangxf_lut@163.com; Ma, Zhenduo; Li, Ya; Guo, Feng; Yang, Jianchang; Ma, Ying; Hao, Yuan

    2017-02-16

    Mg-6Zn magnesium alloys microalloyed with varying Al content (0, 1, 3, 5 and 7 wt%) were prepared by permanent mould casting. The effects of Al on the microstructure and mechanical properties of as-cast Mg-6Zn alloy were characterized with an optical microscope (OM), a scanning electron microscope (SEM) equipped with energy dispersive spectroscope (EDS), an X-ray diffractometer (XRD) and mechanical tests at room temperature, respectively. The experimental results indicate that the grain sizes do not decline obviously while the amount of eutectic phase and the secondary dendrite arm spacing (SDAS) of the alloys gradually increase when the Al content exceeds 3%. The main phases α-Mg, MgZn{sub 2}, Mg{sub 2}Zn{sub 3}, Mg{sub 7}Zn{sub 3}, MgZn, Mg{sub 32}(Al, Zn){sub 49} and Mg{sub 17}Al{sub 12} are found in these alloys. A higher addition of Al (≥5 wt%) causes the formation of the Mg{sub 17}Al{sub 12}, meanwhile, the partial morphology of some eutectic phases is modified into lamellar formation, which has an adverse effect on mechanical properties of the Al-containing alloys. The mechanical testing reveals that, the tensile properties are gradually improved within the range of 0 ~ 3%Al, and the maximum values of ultimate tensile strength (UTS, 214 MPa) and elongation (EL, 8.7%) are simultaneously obtained from the alloy with 3% Al, which increases by 21 MPa and 16.0% compared with that of the ZA60 alloy, respectively. Fracture analysis demonstrates that quasi-cleavage fracture, inter-granular and trans-granular fracture are dominant modes in the alloy with additions of 0, 1, 3 wt% Al. In contrast, the rupture mechanisms of the other investigated alloys belong to cleavage and inter-granular fracture modes.

  19. Characterization of low Al content Al{sub x}Ga{sub 1-x}N epitaxial films grown by atmospheric-pressure MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Toure, A.; Halidou, I.; Benzarti, Z.; Bchetnia, A.; El Jani, B. [Faculte des Sciences, Unite de Recherche sur les Hetero-Epitaxies et Applications, 5019 Monastir (Tunisia); Fouzri, A. [Laboratoire Physico-Chimie des Materiaux, Faculte des Sciences de Monastir, Unite de Service Commun de Recherche ' ' High Resolution X-ray Diffractometer' ' , 5019 Monastir (Tunisia)

    2012-05-15

    Al{sub x}Ga{sub 1-x}N epitaxial films grown on GaN/sapphire by atmospheric-pressure metalorganic vapor phase epitaxy (AP-MOVPE) using trimethylgallium (TMG) and trimethylaluminum (TMA) as group III precursors have been studied. Two groups of samples were grown. The aluminum (Al) solid composition of Al{sub x}Ga{sub 1-x}N was varied in the range from 0.03 to 0.20 by changing the molar flow ratio [TMA/(TMA + TMG)]. The effect of TMA flow rate, respectively, TMG flow rate, on the growth rate, and Al solid composition is discussed. The structural properties of the alloys have been investigated by high-resolution X-ray diffraction (HRXRD). The optical properties of these samples were investigated by photoluminescence (PL). It is found that on increasing Al solid composition, via an increase of the TMA flow rate, the structural quality is deteriorated and the growth efficiency decreases. On the other hand, when the TMG flow rate is reduced, a decrease of the full width at half-maximum (FWHM) is observed with Al content. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Swelling and Interlayer Chemistry of Layered MWW Zeolites MCM-22 and MCM-56 with High Al Content

    Czech Academy of Sciences Publication Activity Database

    Roth, Wieslaw Jerzy; Čejka, Jiří; Millini, R.; Montanari, E.; Gil, B.; Kubů, Martin

    2015-01-01

    Roč. 27, č. 13 (2015), s. 4620-4629 ISSN 0897-4756 R&D Projects: GA ČR(CZ) GAP106/12/0189 EU Projects: European Commission(XE) 604307 - CASCATBEL Institutional support: RVO:61388955 Keywords : MESOPOROUS MOLECULAR-SIEVES * CATALYTIC-PROPERTIES * STRUCTURE PRESERVATION Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 9.407, year: 2015

  1. Effect of Al content on the gas-phase dehydration of glycerol over silica-alumina-supported silicotungstic acid catalysts

    International Nuclear Information System (INIS)

    Kim, Yong Tae; You, Su Jin; Park, Eun Duck; Jung, Kwangdeog

    2012-01-01

    The gas-phase dehydration of glycerol to acrolein was carried out over silicotungstic acid (H 4 SiW 12 O 40 ·xH 2 O, HSiW) catalysts supported on SiO 2 , η-Al 2 O 3 , and silica-alumina with different Al contents. The HSiW catalysts supported on silica-alumina showed higher glycerol conversions and acrolein yields during the initial 2 h at 315.deg.C than did SiO 2 - and η-Al 2 O 3 -supported HSiW catalysts. Among the tested catalysts, HSiW/Si 0.9 Al 0.1Ox exhibited the highest space-time yield during the initial 2 h. The loaded HSiW species can change the acid types and suppress the formation of carbonaceous species on Al-rich silica-alumina. The deactivated HSiW supported on silica-alumina can be fully regenerated after calcination in air at 500.deg.C. As long as the molar ratio between water and glycerol was in the range of 2-11, the acrolein selectivity increased significantly with increasing water content in the feed, while the surface carbon content decreased owing to the suppression of heavy compounds

  2. Reduction of basal plane defects in (11-22) semipolar InGaN/GaN MQWs fabricated on patterned (113) Si substrates by introducing AlGaN barrier layers

    Energy Technology Data Exchange (ETDEWEB)

    Uesugi, Kenjiro; Hikosaka, Toshiki; Ono, Hiroshi; Sakano, Tatsunori; Nunoue, Shinya [Corporate Research and Development Center, Toshiba Corporation, Kawasaki (Japan)

    2017-08-15

    GaN grown on nonpolar or semipolar faces have been widely developed as a promising material for the next generation optical and electronic devices. In this work, (11-22) semipolar InGaN/GaN MQWs were grown on patterned (113) Si substrates and fabricated into thin-film-type flip-chip LEDs. From CL and TEM measurement, generation of basal plane defects (BPDs) around MQWs and Strain-relaxation layers (SRLs) has been observed. The relationship between MQW structures and formation of BPDs has been investigated. By optimizing MQW structures, light output power and external quantum efficiency have been improved with thick InGaN well layers and GaN barrier layers. Introducing AlGaN barrier layers has enabled further reduction of BPDs in MQWs and, as a result, an enhancement of EQE has been achieved. The maximum EQE value of the sample with AlGaN barrier layers was 12.9%.This result indicates that the reduction of BPDs is an effective approach for obtaining the high-efficiency semipolar LEDs on Si substrates. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells

    International Nuclear Information System (INIS)

    Li, Xiaohang; Xie, Hongen; Ponce, Fernando A.; Ryou, Jae-Hyun; Detchprohm, Theeradetch; Dupuis, Russell D.

    2015-01-01

    We demonstrated onset of deep-ultraviolet (DUV) surface stimulated emission (SE) from c-plane AlGaN multiple-quantum well (MQW) heterostructures grown on a sapphire substrate by optical pumping at room temperature. The onset of SE became observable at a pumping power density of 630 kW/cm 2 . Spectral deconvolution revealed superposition of a linearly amplified spontaneous emission peak at λ ∼ 257.0 nm with a full width at half maximum (FWHM) of ∼12 nm and a superlinearly amplified SE peak at λ ∼ 260 nm with a narrow FWHM of less than 2 nm. In particular, the wavelength of ∼260 nm is the shortest wavelength of surface SE from III-nitride MQW heterostructures to date. Atomic force microscopy and scanning transmission electron microscopy measurements were employed to investigate the material and structural quality of the AlGaN heterostructures, showing smooth surface and sharp layer interfaces. This study offers promising results for AlGaN heterostructures grown on sapphire substrates for the development of DUV vertical cavity surface emitting lasers (VCSELs)

  4. Kinetic instability of AlGaN alloys during MBE growth under metal-rich conditions on m-plane GaN miscut towards the -c axis

    Science.gov (United States)

    Shirazi-HD, M.; Diaz, R. E.; Nguyen, T.; Jian, J.; Gardner, G. C.; Wang, H.; Manfra, M. J.; Malis, O.

    2018-04-01

    AlxGa1-xN layers with Al-composition above 0.6 (0.6 < x < 0.9) grown under metal-rich conditions by plasma-assisted molecular beam epitaxy on m-plane GaN miscut towards the -c axis are kinetically unstable. Even under excess Ga flux, the effective growth rate of AlGaN is drastically reduced, likely due to suppression of Ga-N dimer incorporation. The defect structure generated during these growth conditions is studied with energy dispersive x-ray spectroscopy scanning transmission electron microscopy as a function of Al flux. The AlGaN growth results in the formation of thin Al(Ga)N layers with Al-composition higher than expected and lower Al-composition AlGaN islands. The AlGaN islands have a flat top and are elongated along the c-axis (i.e., stripe-like shape). Possible mechanisms for the observed experimental results are discussed. Our data are consistent with a model in which Al-N dimers promote release of Ga-N dimers from the m-plane surface.

  5. Carrier dynamics in epilayers and nanocolumns of ternary AlGaN with a tunable bandgap

    International Nuclear Information System (INIS)

    Aleksiejunas, R; Šcajev, P; Nargelas, S; Miasojedovas, S; Jarašiunas, K; Trinkler, L; Grigorjeva, J; Berzina, B; Chen, K H; Chen, Y T; Chen, M W; Chen, L C

    2012-01-01

    We apply several optical time-resolved techniques to investigate the dynamics of excess carriers in Al x Ga 1−x N nanocolumns grown on (111) silicon substrates and in thick Al x Ga 1−x N epitaxial layers deposited on sapphire. We demonstrate that carrier lifetime drops in nanocolumns by several times if compared to epilayers with similar Al content; in addition, recombination rate displays a strong nonlinearity on excitation. On the other hand, carrier localization effects observed in the epilayers completely disappear in nanocolumns.

  6. Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties.

    Science.gov (United States)

    Massabuau, Fabien C-P; Rhode, Sneha L; Horton, Matthew K; O'Hanlon, Thomas J; Kovács, András; Zielinski, Marcin S; Kappers, Menno J; Dunin-Borkowski, Rafal E; Humphreys, Colin J; Oliver, Rachel A

    2017-08-09

    We conducted a comprehensive investigation of dislocations in Al 0.46 Ga 0.54 N. Using aberration-corrected scanning transmission electron microscopy and energy dispersive X-ray spectroscopy, the atomic structure and atom distribution at the dislocation core have been examined. We report that the core configuration of dislocations in AlGaN is consistent with that of other materials in the III-Nitride system. However, we observed that the dissociation of mixed-type dislocations is impeded by alloying GaN with AlN, which is confirmed by our experimental observation of Ga and Al atom segregation in the tensile and compressive parts of the dislocations, respectively. Investigation of the optical properties of the dislocations shows that the atom segregation at dislocations has no significant effect on the intensity recorded by cathodoluminescence in the vicinity of the dislocations. These results are in contrast with the case of dislocations in In 0.09 Ga 0.91 N where segregation of In and Ga atoms also occurs but results in carrier localization limiting non-radiative recombination at the dislocation. This study therefore sheds light on why InGaN-based devices are generally more resilient to dislocations than their AlGaN-based counterparts.

  7. Activation characteristics of ion-implanted Si+ in AlGaN

    International Nuclear Information System (INIS)

    Irokawa, Y.; Fujishima, O.; Kachi, T.; Pearton, S.J.; Ren, F.

    2005-01-01

    Multiple-energy Si + implantation in the range 30-360 keV into Al 0.13 Ga 0.87 N for n-type doping was carried out at room temperature, followed by annealing at 1150-1375 deg. C for 5 min. Activation efficiencies close to 100% were obtained for ion doses of 1.0x10 15 cm -2 after annealing at 1375 deg. C, with a resulting sheet resistance of 74 Ω/square. By sharp contrast, the activation efficiency at 1150 deg. C was only 4% for this dose, with a sheet resistance of 1.63x10 4 Ω/square. The activation efficiency was also a function of dose, with a maximum activation percentage of only 55% for lower doses of 1.0x10 14 cm -2 annealed at 1375 deg. C. This is due to the comparatively larger effect of compensating acceptors at the lower dose and is also lower than the corresponding activation of Si in pure GaN under these conditions (78%). The measurement temperature dependence of sheet carrier density showed an activation energy of 23 meV, consistent with the ionization energy of Si in AlGaN

  8. Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

    Science.gov (United States)

    Nigam, Adarsh; Bhat, Thirumaleshwara N.; Rajamani, Saravanan; Dolmanan, Surani Bin; Tripathy, Sudhiranjan; Kumar, Mahesh

    2017-08-01

    In order to study the effect of self-heating of AlGaN/ GaN high electron mobility transistors (HEMTs) characteristics fabricated on Si(111) substrate, simulations of 2DEG temperature on different drain voltages have been carried out by Sentaurus TCAD simulator tool. Prior to the electrical direct-current (DC) characteristics studies, structural properties of the HEMT structures were examined by scanning transmission electron microscopy. The comparative analysis of simulation and experimental data provided sheet carrier concentration, mobility, surface traps, electron density at 2DEG by considering factors such as high field saturation, tunneling and recombination models. Mobility, surface trap concentration and contact resistance were obtained by TCAD simulation and found out to be ˜1270cm2/Vs, ˜2×1013 cm-2 and ˜0.2 Ω.mm, respectively, which are in agreement with the experimental results. Consequently, simulated current-voltage characteristics of HEMTs are in good agreement with experimental results. The present simulator tool can be used to design new device structures for III-nitride technology.

  9. Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111 substrate

    Directory of Open Access Journals (Sweden)

    Adarsh Nigam

    2017-08-01

    Full Text Available In order to study the effect of self-heating of AlGaN/ GaN high electron mobility transistors (HEMTs characteristics fabricated on Si(111 substrate, simulations of 2DEG temperature on different drain voltages have been carried out by Sentaurus TCAD simulator tool. Prior to the electrical direct-current (DC characteristics studies, structural properties of the HEMT structures were examined by scanning transmission electron microscopy. The comparative analysis of simulation and experimental data provided sheet carrier concentration, mobility, surface traps, electron density at 2DEG by considering factors such as high field saturation, tunneling and recombination models. Mobility, surface trap concentration and contact resistance were obtained by TCAD simulation and found out to be ∼1270cm2/Vs, ∼2×1013 cm-2 and ∼0.2 Ω.mm, respectively, which are in agreement with the experimental results. Consequently, simulated current-voltage characteristics of HEMTs are in good agreement with experimental results. The present simulator tool can be used to design new device structures for III-nitride technology.

  10. Deformation potentials in AlGaN and InGaN alloys and their impact on optical polarization properties of nitride quantum wells

    DEFF Research Database (Denmark)

    Łepkowski, S. P.; Gorczyca, I.; Stefańska-Skrobas, K.

    2013-01-01

    The deformation potentials acz−D1, act−D2, D3, D4, and D5 are determined for random AlGaN and InGaN alloys using electronic band structure calculations based on the density functional theory. A sublinear composition dependence is obtained for acz−D1 and D3 in AlGaN, and D3 in InGaN, whereas...... superlinear behavior on composition is found foract−D2, D4, and D5 in AlGaN, and act−D2and D5 in InGaN. The optical polarization properties of nitride quantum wells are very well described by the k·p method when the obtained deformation potentials are included. In m-plane AlGaN/AlN and InGaN/GaN quantum wells...

  11. Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content

    OpenAIRE

    Fay, Mike W.; Han, Y.; Brown, Paul D.; Harrison, Ian; Hilton, K.P.; Munday, A.; Wallis, D.; Balmer, R.S.; Uren, M.J.; Martin, T.

    2008-01-01

    The effect of varying annealing temperature and Al layer thickness on the structural and electrical characteristics of AuPtAlTi/AlGaN/GaN ohmic contact structures has been systematically investigated. The relationship between annealing temperature, Al content, interfacial microstructure, surface planarity and contact resistance is\\ud examined. In particular, the presence of a detrimental low temperature Pt-Al reaction is identified. This is implicated in both the requirement for a higher Al:T...

  12. Enhancing the Light-Extraction Efficiency of AlGaN Nanowires Ultraviolet Light-Emitting Diode by using Nitride/Air Distributed Bragg Reflector Nanogratings

    KAUST Repository

    Alias, Mohd Sharizal; Janjua, Bilal; Zhao, Chao; Priante, Davide; Alhamoud, Abdullah A.; Tangi, Malleswararao; Alanazi, Lafi M.; Alatawi, Abdullah A.; Albadri, Abdulrahman M.; Alyamani, Ahmed Y.; Ng, Tien Khee; Ooi, Boon S.

    2017-01-01

    The performance and efficiency of AlGaN ultraviolet light-emitting diodes have been limited by the extremely low light-extraction efficiency (LEE) due to the intrinsic material properties of AlGaN. Here, to enhance the LEE of the device, we demonstrate an AlGaN nanowires light-emitting diode (NWs-LED) integrated with nitride/air Distributed Bragg Reflector (DBR) nanogratings. Compared to a control device (only mesa), the AlGaN NWs-LED with the nitride/air DBR nanogratings exhibit enhancement in the light output power and external quantum efficiency (EQE) by a factor of ∼1.67. The higher light output power and EQE are attributed mainly to the multiple reflectances laterally for the transverse magnetic (TM)-polarized light and scattering introduced by the nanogratings. To further understand the LEE enhancement, the electrical field distribution, extraction ratio and polar pattern of the AlGaN NWs-LED with and without the nitride/air DBR nanogratings were analyzed using the finite-difference-time-domain method. It was observed that the TM-field emission was confined and scattered upward whereas the polar pattern was intensified for the AlGaN NWs-LED with the nanogratings. Our approach to enhance the LEE via the nitride/air DBR nanogratings can provide a promising route for increasing the efficiency of AlGaN-based LEDs, also, to functioning as facet mirror for AlGaN-based laser diodes.

  13. On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers

    Energy Technology Data Exchange (ETDEWEB)

    Koleske, D. D. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Fischer, A. J. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Bryant, B. N. [Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials; Kotula, P. G. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Wierer, J. J. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

    2015-01-07

    InGaN/AlGaN/GaN-based multiple quantum wells (MQWs) with AlGaN interlayers (ILs) are investigated, specifically to examine the fundamental mechanisms behind their increased radiative efficiency at wavelengths of 530–590 nm. The AlzGa1-zN (z~0.38) IL is ~1–2 nm thick, and is grown after and at the same growth temperature as the ~3 nm thick InGaN quantum well (QW). This is followed by an increase in temperature for the growth of a ~10 nm thick GaN barrier layer. The insertion of the AlGaN IL within the MQW provides various benefits. First, the AlGaN IL allows for growth of the InxGa1-xN QW well below typical growth temperatures to achieve higher x (up to~0.25). Second, annealing the IL capped QW prior to the GaN barrier growth improves the AlGaN IL smoothness as determined by atomic force microscopy, improves the InGaN/AlGaN/GaN interface quality as determined from scanning transmission electron microscope images and x-ray diffraction, and increases the radiative efficiency by reducing non-radiative defects as determined by time-resolved photoluminescence measurements. Finally, the AlGaN IL increases the spontaneous and piezoelectric polarization induced electric fields acting on the InGaN QW, providing an additional red-shift to the emission wavelength as determined by Schrodinger-Poisson modeling and fitting to the experimental data. The relative impact of increased indium concentration and polarization fields on the radiative efficiency of MQWs with AlGaN ILs is also explored, along with implications to conventional longer wavelength emitters.

  14. Enhancing the Light-Extraction Efficiency of AlGaN Nanowires Ultraviolet Light-Emitting Diode by using Nitride/Air Distributed Bragg Reflector Nanogratings

    KAUST Repository

    Alias, Mohd Sharizal

    2017-09-11

    The performance and efficiency of AlGaN ultraviolet light-emitting diodes have been limited by the extremely low light-extraction efficiency (LEE) due to the intrinsic material properties of AlGaN. Here, to enhance the LEE of the device, we demonstrate an AlGaN nanowires light-emitting diode (NWs-LED) integrated with nitride/air Distributed Bragg Reflector (DBR) nanogratings. Compared to a control device (only mesa), the AlGaN NWs-LED with the nitride/air DBR nanogratings exhibit enhancement in the light output power and external quantum efficiency (EQE) by a factor of ∼1.67. The higher light output power and EQE are attributed mainly to the multiple reflectances laterally for the transverse magnetic (TM)-polarized light and scattering introduced by the nanogratings. To further understand the LEE enhancement, the electrical field distribution, extraction ratio and polar pattern of the AlGaN NWs-LED with and without the nitride/air DBR nanogratings were analyzed using the finite-difference-time-domain method. It was observed that the TM-field emission was confined and scattered upward whereas the polar pattern was intensified for the AlGaN NWs-LED with the nanogratings. Our approach to enhance the LEE via the nitride/air DBR nanogratings can provide a promising route for increasing the efficiency of AlGaN-based LEDs, also, to functioning as facet mirror for AlGaN-based laser diodes.

  15. Growth of AlGaN under the conditions of significant gallium evaporation: phase separation and enhanced lateral growth

    OpenAIRE

    Mayboroda, I. O.; Knizhnik, A. A.; Grishchenko, Yu. V.; Ezubchenko, I. S.; Zanaveskin, Maxim L.; Presniakov, M. Yu.; Potapkin, B. V.; Ilyin, V. A.

    2017-01-01

    Growth kinetics of AlGaN in NH3 MBE under significant Ga desorption was studied. It was found that the addition of gallium stimulates 2D growth and provides better morphology of films compared to pure AlN. The effect was experimentally observed at up to 98% desorption of the impinging gallium. We found that, under the conditions of significant thermal desorption, larger amounts of gallium were retained at lateral boundaries of 3D surface features than at flat terraces because of the higher bi...

  16. Effects of the strain relaxation of an AlGaN barrier layer induced by various cap layers on the transport properties in AlGaN/GaN heterostructures

    International Nuclear Information System (INIS)

    Liu Zi-Yang; Zhang Jin-Cheng; Duan Huan-Tao; Xue Jun-Shuai; Lin Zhi-Yu; Ma Jun-Cai; Xue Xiao-Yong; Hao Yue

    2011-01-01

    The strain relaxation of an AlGaN barrier layer may be influenced by a thin cap layer above, and affects the transport properties of AlGaN/GaN heterostructures. Compared with the slight strain relaxation found in AlGaN barrier layer without cap layer, it is found that a thin cap layer can induce considerable changes of strain state in the AlGaN barrier layer. The degree of relaxation of the AlGaN layer significantly influences the transport properties of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures. It is observed that electron mobility decreases with the increasing degree of relaxation of the AlGaN barrier, which is believed to be the main cause of the deterioration of crystalline quality and morphology on the AlGaN/GaN interface. On the other hand, both GaN and AlN cap layers lead to a decrease in 2DEG density. The reduction of 2DEG caused by the GaN cap layer may be attributed to the additional negative polarization charges formed at the interface between GaN and AlGaN, while the reduction of the piezoelectric effect in the AlGaN layer results in the decrease of 2DEG density in the case of AlN cap layer. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  17. Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Mehnke, Frank, E-mail: mehnke@physik.tu-berlin.de; Kuhn, Christian; Guttmann, Martin; Reich, Christoph; Kolbe, Tim; Rass, Jens; Wernicke, Tim [Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Kueller, Viola; Knauer, Arne; Lapeyrade, Mickael; Einfeldt, Sven; Weyers, Markus [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany); Kneissl, Michael [Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

    2014-08-04

    The design and Mg-doping profile of AlN/Al{sub 0.7}Ga{sub 0.3}N electron blocking heterostructures (EBH) for AlGaN multiple quantum well (MQW) light emitting diodes (LEDs) emitting below 250 nm was investigated. By inserting an AlN electron blocking layer (EBL) into the EBH, we were able to increase the quantum well emission power and significantly reduce long wavelength parasitic luminescence. Furthermore, electron leakage was suppressed by optimizing the thickness of the AlN EBL while still maintaining sufficient hole injection. Ultraviolet (UV)-C LEDs with very low parasitic luminescence (7% of total emission power) and external quantum efficiencies of 0.19% at 246 nm have been realized. This concept was applied to AlGaN MQW LEDs emitting between 235 nm and 263 nm with external quantum efficiencies ranging from 0.002% to 0.93%. After processing, we were able to demonstrate an UV-C LED emitting at 234 nm with 14.5 μW integrated optical output power and an external quantum efficiency of 0.012% at 18.2 A/cm{sup 2}.

  18. Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes

    International Nuclear Information System (INIS)

    Mehnke, Frank; Kuhn, Christian; Guttmann, Martin; Reich, Christoph; Kolbe, Tim; Rass, Jens; Wernicke, Tim; Kueller, Viola; Knauer, Arne; Lapeyrade, Mickael; Einfeldt, Sven; Weyers, Markus; Kneissl, Michael

    2014-01-01

    The design and Mg-doping profile of AlN/Al 0.7 Ga 0.3 N electron blocking heterostructures (EBH) for AlGaN multiple quantum well (MQW) light emitting diodes (LEDs) emitting below 250 nm was investigated. By inserting an AlN electron blocking layer (EBL) into the EBH, we were able to increase the quantum well emission power and significantly reduce long wavelength parasitic luminescence. Furthermore, electron leakage was suppressed by optimizing the thickness of the AlN EBL while still maintaining sufficient hole injection. Ultraviolet (UV)-C LEDs with very low parasitic luminescence (7% of total emission power) and external quantum efficiencies of 0.19% at 246 nm have been realized. This concept was applied to AlGaN MQW LEDs emitting between 235 nm and 263 nm with external quantum efficiencies ranging from 0.002% to 0.93%. After processing, we were able to demonstrate an UV-C LED emitting at 234 nm with 14.5 μW integrated optical output power and an external quantum efficiency of 0.012% at 18.2 A/cm 2

  19. Growth of (20 anti 21)AlGaN, GaN and InGaN by metal organic vapor phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Ploch, S.; Wernicke, T.; Rass, J.; Pristovsek, M. [TU Berlin, Institut fuer Festkoerperphysik, Hardenbergstr. 36, 10623 Berlin (Germany); Weyers, M. [Ferdinand-Braun-Institut, Leibniz Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany); Kneissl, M. [TU Berlin, Institut fuer Festkoerperphysik, Hardenbergstr. 36, 10623 Berlin (Germany); Ferdinand-Braun-Institut, Leibniz Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

    2012-07-01

    Green InGaN-based laser diodes on (20 anti 21)GaN substrates have recently demonstrated performances exceeding those of conventional (0001) oriented devices. However little is known regarding the growth parameters. We have investigated growth of AlGaN, GaN and InGaN on (20 anti 21)GaN substrates by MOVPE. Smooth GaN layers with a rms roughness <0.5 nm were obtained by low growth temperatures and reactor pressures. The layers exhibit undulations along [10 anti 14] similar to the GaN substrate. AlGaN and InGaN layers exhibit an increased surface roughness. Undulation bunching was observed and attributed to reduced adatom surface mobility due to the binding energy of Al and the low growth temperature for InGaN respectively or strain relaxation. AlGaN and InGaN heterostructures on (20 anti 21)GaN relax by layer tilt accompanied by formation of misfit dislocations, due to shear strain of the unit cell. This relaxation mechanism leads to a reduced critical layer thickness of (20 anti 21)AlGaN layers and InGaN multi quantum wells (MQW) in comparison to (0001). PL spectral broadening of 230 meV of (20 anti 21)InGaN single QWs emitting at 415 nm can be reduced by increased growth temperature or increased number of QWs with reduced thickness.

  20. Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution

    DEFF Research Database (Denmark)

    Rozhavskaya, Mariia M.; Kukushkin, Sergey A.; Osipov, Andrey V.

    2017-01-01

    We report a novel approach for metal organic vapor phase epitaxy of (Al)GaN heterostructures on Si substrates. An approximately 90–100 nm thick SiC buffer layer is synthesized using the reaction between Si substrate and CO gas. Highresolution transmission electron microscopy reveals sharp...

  1. Determination of Temperature-Dependent Stress State in Thin AlGaN Layer of AlGaN/GaN HEMT Heterostructures by Near-Resonant Raman Scattering

    OpenAIRE

    Yanli Liu; Xifeng Yang; Dunjun Chen; Hai Lu; Rong Zhang; Youdou Zheng

    2015-01-01

    The temperature-dependent stress state in the AlGaN barrier layer of AlGaN/GaN heterostructure grown on sapphire substrate was investigated by ultraviolet (UV) near-resonant Raman scattering. Strong scattering peak resulting from the A1(LO) phonon mode of AlGaN is observed under near-resonance condition, which allows for the accurate measurement of Raman shifts with temperature. The temperature-dependent stress in the AlGaN layer determined by the resonance Raman spectra is consistent with th...

  2. Synchrotron-based XPS studies of AlGaN and GaN surface chemistry and its relationship to ion sensor behaviour

    Energy Technology Data Exchange (ETDEWEB)

    Khir, Farah Liyana Muhammad, E-mail: 21001899@student.uwa.edu.au [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); Myers, Matthew, E-mail: Matt.Myers@csiro.au [School of Chemistry and Biochemistry, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); CSIRO Earth Science and Resource Engineering, Kensington, Western Australia 6151 (Australia); Podolska, Anna [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); Department of Exploration Geophysics, Curtin University of Technology, 26 Dick Perry Avenue, ARRC, Kensington, Western Australia 6151 (Australia); Sanders, Tarun Maruthi [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); Baker, Murray V., E-mail: murray.baker@uwa.edu.au [School of Chemistry and Biochemistry, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); Nener, Brett D., E-mail: brett.nener@uwa.edu.au [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); Parish, Giacinta, E-mail: giacinta.parish@uwa.edu.au [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia)

    2014-09-30

    Highlights: • Soft X-ray was used to study the surface chemistry of GaN and AlGaN. • The surface chemistry and sensor behaviour were investigated. • The oxide of aluminum is significantly more reactive than gallium. • The Cl{sup −} ions are greater in GaN samples compared to AlGaN samples. - Abstract: Soft X-ray photoelectron spectroscopy was used to investigate the fundamental surface chemistry of both AlGaN and GaN surfaces in the context of understanding the behaviour of AlGaN/GaN heterostructures as chemical field-effect transistor (CHEMFET) ion sensors. AlGaN and GaN samples were subjected to different methods of oxide growth (native oxide and thermally grown oxide) and chemical treatment conditions. Our investigations indicate that the etching of the oxide layer is more pronounced with AlGaN compared to GaN. Also, we observed that chloride ions have a greater tendency to attach to the GaN surface relative to the AlGaN surface. Furthermore, chloride ions are comparatively more prevalent on surfaces treated with 5% HCl acid solution. The concentration of chloride ions is even higher on the HCl treated native oxide surface resulting in a very clear deconvolution of the Cl 2p{sub 1/2} and Cl 2p{sub 3/2} peaks. For GaN and AlGaN surfaces, a linear response (e.g. source-drain current) is typically seen with variation in pH of buffered solutions with constant reference electrode voltage at the surface gate; however, an inverted bath-tub type response (e.g. a maximum at neutral pH and lower values at pH values away from neutral) and a general tendency to negative charge selectivity has been also widely reported. We have shown that our XPS investigations are consistent with the different sensor response reported in the literature for these CHEMFET devices and may help to explain the differing response of these materials.

  3. Influence of thermal stress on the relative permittivity of the AlGaN barrier layer in an AlGaN/GaN heterostructure Schottky contacts

    International Nuclear Information System (INIS)

    Lü Yuan-Jie; Lin Zhao-Jun; Zhang Yu; Meng Ling-Guo; Cao Zhi-Fang; Luan Chong-Biao; Chen Hong; Wang Zhan-Guo

    2011-01-01

    Ni Schottky contacts on AlGaN/GaN heterostructures were fabricated. Some samples were thermally treated in a furnace with N 2 ambience at 600 °C for different times (0.5 h, 4.5 h, 10.5 h, 18 h, 33 h, 48 h, and 72 h), the others were thermally treated for 0.5 h at different temperatures (500 °C, 600 °C, 700 °C, and 800 °C). With the measured current—voltage (I—V) and capacitance—voltage (C—V) curves and by self-consistently solving Schrodinger's and Poisson's equations, we found that the relative permittivity of the AlGaN barrier layer was related to the piezoelectric and the spontaneous polarization of the AlGaN barrier layer. The relative permittivity was in proportion to the strain of the AlGaN barrier layer. The relative permittivity and the strain reduced with the increased thermal stress time until the AlGaN barrier totally relaxed (after 18 h at 600 °C in the current study), and then the relative permittivity was almost a constant with the increased thermal stress time. When the sample was treated at 800 °C for 0.5 h, the relative permittivity was less than the constant due to the huge diffusion of the contact metal atoms. Considering the relation between the relative permittivity of the AlGaN barrier layer and the converse piezoelectric effect, the conclusion can be made that a moderate thermal stress can restrain the converse piezoelectric effect and can improve the stability of AlGaN/GaN heterostructure devices. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  4. Determination of Temperature-Dependent Stress State in Thin AlGaN Layer of AlGaN/GaN HEMT Heterostructures by Near-Resonant Raman Scattering

    Directory of Open Access Journals (Sweden)

    Yanli Liu

    2015-01-01

    Full Text Available The temperature-dependent stress state in the AlGaN barrier layer of AlGaN/GaN heterostructure grown on sapphire substrate was investigated by ultraviolet (UV near-resonant Raman scattering. Strong scattering peak resulting from the A1(LO phonon mode of AlGaN is observed under near-resonance condition, which allows for the accurate measurement of Raman shifts with temperature. The temperature-dependent stress in the AlGaN layer determined by the resonance Raman spectra is consistent with the theoretical calculation result, taking lattice mismatch and thermal mismatch into account together. This good agreement indicates that the UV near-resonant Raman scattering can be a direct and effective method to characterize the stress state in thin AlGaN barrier layer of AlGaN/GaN HEMT heterostructures.

  5. Effects of NH3 Flow Rate During AlGaN Barrier Layer Growth on the Material Properties of AlGaN/GaN HEMT Heterostructure

    Science.gov (United States)

    Lumbantoruan, Franky J.; Wong, Yuen-Yee; Huang, Wei-Ching; Yu, Hung-Wei; Chang, Edward-Yi

    2017-10-01

    NH3 flow rate during AlGaN barrier layer growth not only affects the growth efficiency and surface morphology as a result of parasitic reactions but also influences the concentration of carbon impurity in the AlGaN barrier. Carbon, which decomposes from metal precursors, plays a role in electron compensation for AlGaN/GaN HEMT. No 2-dimensional electron gas (2-DEG) was detected in the AlGaN/GaN structure if grown with 0.5 slm of NH3 due to the presence of higher carbon impurity (2.6 × 1019 cm-2). When the NH3 flow rate increased to 6.0 slm, the carbon impurity reduced to 2.10 × 1018 atom cm-3 and the 2 DEG electron density recovered to 9.57 × 1012 cm-2.

  6. Final LDRD report : science-based solutions to achieve high-performance deep-UV laser diodes.

    Energy Technology Data Exchange (ETDEWEB)

    Armstrong, Andrew M.; Miller, Mary A.; Crawford, Mary Hagerott; Alessi, Leonard J.; Smith, Michael L.; Henry, Tanya A.; Westlake, Karl R.; Cross, Karen Charlene; Allerman, Andrew Alan; Lee, Stephen Roger

    2011-12-01

    We present the results of a three year LDRD project that has focused on overcoming major materials roadblocks to achieving AlGaN-based deep-UV laser diodes. We describe our growth approach to achieving AlGaN templates with greater than ten times reduction of threading dislocations which resulted in greater than seven times enhancement of AlGaN quantum well photoluminescence and 15 times increase in electroluminescence from LED test structures. We describe the application of deep-level optical spectroscopy to AlGaN epilayers to quantify deep level energies and densities and further correlate defect properties with AlGaN luminescence efficiency. We further review our development of p-type short period superlattice structures as an approach to mitigate the high acceptor activation energies in AlGaN alloys. Finally, we describe our laser diode fabrication process, highlighting the development of highly vertical and smooth etched laser facets, as well as characterization of resulting laser heterostructures.

  7. Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers

    Directory of Open Access Journals (Sweden)

    Syed Ahmed Al Muyeed

    2017-10-01

    Full Text Available Data are presented on strain compensation in InGaN-based multiple quantum wells (MQW using AlGaN interlayers (ILs. The MQWs consist of five periods of InxGa1-xN/AlyGa1-yN/GaN emitting in the green (λ ∼ 535 nm ± 15 nm, and the AlyGa1-yN IL has an Al composition of y = 0.42. The IL is varied from 0 - 2.1 nm, and the relaxation of the MQW with respect to the GaN template layer varies with IL thickness as determined by reciprocal space mapping about the (202¯5 reflection. The minimum in the relaxation occurs at an interlayer thickness of 1 nm, and the MQW is nearly pseudomorphic to GaN. Both thinner and thicker ILs display increased relaxation. Photoluminescence data shows enhanced spectral intensity and narrower full width at half maximum for the MQW with 1 nm thick ILs, which is a product of pseudomorphic layers with lower defect density and non-radiative recombination.

  8. High-Temperature Growth of GaN and Al x Ga1- x N via Ammonia-Based Metalorganic Molecular-Beam Epitaxy

    Science.gov (United States)

    Billingsley, Daniel; Henderson, Walter; Doolittle, W. Alan

    2010-05-01

    The effect of high-temperature growth on the crystalline quality and surface morphology of GaN and Al x Ga1- x N grown by ammonia-based metalorganic molecular-beam epitaxy (NH3-MOMBE) has been investigated as a means of producing atomically smooth films suitable for device structures. The effects of V/III ratio on the growth rate and surface morphology are described herein. The crystalline quality of both GaN and AlGaN was found to mimic that of the GaN templates, with (002) x-ray diffraction (XRD) full-widths at half- maximum (FWHMs) of ~350 arcsec. Nitrogen-rich growth conditions have been found to provide optimal surface morphologies with a root-mean-square (RMS) roughness of ~0.8 nm, yet excessive N-rich environments have been found to reduce the growth rate and result in the formation of faceted surface pitting. AlGaN exhibits a decreased growth rate, as compared with GaN, due to increased N recombination as a result of the increased pyrolysis of NH3 in the presence of Al. AlGaN films grown directly on GaN templates exhibited Pendellösung x-ray fringes, indicating an abrupt interface and a planar AlGaN film. AlGaN films grown for this study resulted in an optimal RMS roughness of ~0.85 nm with visible atomic steps.

  9. Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs

    Directory of Open Access Journals (Sweden)

    Weihuang Yang

    2013-05-01

    Full Text Available Dense and atomically flat AlN film with root-mean-square roughness value of 0.32 nm was grown on sapphire substrate at a relatively lower temperature by using a three-step epitaxy technique. On the basis of this AlN template, AlGaN-based multiple quantum wells (MQWs with atomically flat hetero-interfaces were epitaxially grown to suppress nonradiative recombination by introducing In as a surfactant during simultaneous source supply. As a result, single intense- and narrow-peaked photoluminescence was obtained from the MQWs. Finally, the deep ultraviolet light emitting diodes with well-behaved I-V characteristic and strong electroluminescence in the range of 256–312 nm were fabricated successfully.

  10. Impact of light polarization on photoluminescence intensity and quantum efficiency in AlGaN and AlInGaN layers

    Science.gov (United States)

    Netzel, C.; Knauer, A.; Weyers, M.

    2012-12-01

    We analyzed emission intensity, quantum efficiency, and emitted light polarization of c-plane AlGaN and AlInGaN layers (λ = 320-350 nm) by temperature dependent photoluminescence. Low indium content in AlInGaN structures causes a significant intensity increase by change of the polarization of the emitted light. Polarization changes from E ⊥ c to E ‖ c with increasing aluminum content. It switches back to E ⊥ c with the incorporation of indium. The polarization degree decreases with temperature. This temperature dependence can corrupt internal quantum efficiency determination by temperature dependent photoluminescence.

  11. Structural, morphological and magnetic properties of AlGaN thin films co-implanted with Cr and Sm ions

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Xingguo [School of Science, Shandong Polytechnic University, Jinan 250353 (China); College of Physics and Electronics, Shandong Normal University, Jinan 250014 (China); Liu, Chao, E-mail: cliu@semi.ac.cn [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Yin, Chunhai; Sun, Lili; Tao, Dongyan [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Yang, Cheng [College of Physics and Electronics, Shandong Normal University, Jinan 250014 (China); Man, Baoyuan, E-mail: byman@sdnu.edu.cn [College of Physics and Electronics, Shandong Normal University, Jinan 250014 (China)

    2013-10-15

    Cr and Sm co-implanted AlGaN (AlGaN:Cr:Sm) films have been fabricated by metal organic chemical vapor deposition, ion implantation and annealing. No secondary phase and metal-related peak can be detected within the detection limit of X-ray diffraction measurement. The Raman analysis demonstrated that the peak of E{sub 2} (H) phonon mode of sample B is much more narrow and sharp than that of sample A. The atomic force microscopy measurements indicated that the root mean square roughness for sample A and sample B were 2.26 and 1.07 nm, respectively. According to superconducting quantum interference device analysis, the AlGaN:Cr:Sm films exhibit room-temperature ferromagnetism and colossal magnetic moment effect. Moreover, the saturation magnetization of sample B is 9.75 μ{sub B}/atom, which is much higher than that of sample A (1.86 μ{sub B}/atom). Finally, the possible origin of the room-temperature ferromagnetism in AlGaN:Cr:Sm films was discussed. - Highlights: • Post-implantation annealing is helpful to recover the crystal quality of the samples. • The samples exhibit room-temperature ferromagnetism and colossal magnetic moment. • The origin of the ferromagnetism in our samples can be explained by BMP theory. • Colossal magnetic moment may come from 3d and 4f coupling between Cr{sup 3+} and Sm{sup 3+} ions. • The interaction between BMPs may also contribute to the colossal magnetic moment.

  12. Investigation of structural, optical, and electrical characteristics of an AlGaN/GaN high electron mobility transistor structure across a 200 mm Si(1 1 1) substrate

    International Nuclear Information System (INIS)

    Perozek, J; Lee, H-P; Bayram, C; Krishnan, B; Paranjpe, A; Reuter, K B; Sadana, D K

    2017-01-01

    An AlGaN/GaN high electron mobility transistor (HEMT) structure is grown on a 200 mm Si(1 1 1) substrate. The AlGaN/AlN/GaN heterostructure atop, which forms the 2D electron gas, is studied via transmission electron microscopy (TEM), scanning tunneling microscopy, and TEM chemical analysis. To quantify the uniformity of structural, optical, and electrical properties of these AlGaN/GaN HEMT structures, scanning electron microscopy, optical microscopy, atomic-force microscopy, x-ray diffraction ( ω /2 θ scan and reciprocal space mapping) and Hall effect measurements are employed across the center, middle, and edge of the 200 mm wafer. Small thickness (<3%) and Al-content (<3%) variations in (Al)GaN layers across the wafer are recorded whereas a considerable change (28%) in the electron mobility is observed across the wafer that correlates with variations in surface roughness, defectivity, and layer stress. We attribute the higher mobility in the middle of the wafer to lower interface scattering, thanks to lower surface roughness and less edge-type dislocation density. Additionally, argon (Ar) ion implantation is used as a means for planar electrical isolation, and a seven orders of magnitude decrease in leakage current is achieved when an optimum Ar dose of 10 13 cm −2 is used. The feasibility of scaling AlGaN/GaN HEMTs on a 200 mm Si(1 1 1) platform is discussed. (paper)

  13. Far field photoluminescence imaging of single AlGaN nanowire in the sub-wavelength scale using confinement of polarized light

    Energy Technology Data Exchange (ETDEWEB)

    Sivadasan, A.K.; Dhara, Sandip [Nanomaterials and Sensors Section, Surface and Nanoscience Division, Indira Gandhi Centre for Atomic Research, Homi Bhabha National Institute, Kalpakkam (India); Sardar, Manas [Theoretical Studies Section, Materials Physics Division, Indira Gandhi Centre for Atomic Research, Kalpakkam (India)

    2017-03-15

    Till now the nanoscale focusing and imaging in the sub-diffraction limit is achieved mainly with the help of plasmonic field enhancement by confining the light assisted with noble metal nanostructures. Using far field imaging technique, we have recorded polarized spectroscopic photoluminescence (PL) imaging of a single AlGaN nanowire (NW) of diameter ∝100 nm using confinement of polarized light. It is found that the PL from a single NW is influenced by the proximity to other NWs. The PL intensity is proportional to 1/(l x d), where l and d are the average NW length and separation between the NWs, respectively. We suggest that the proximity induced PL intensity enhancement can be understood by assuming the existence of reasonably long lived photons in the intervening space between the NWs. A nonzero non-equilibrium population of such photons may cause stimulated emission leading to the enhancement of PL emission with the intensity proportional to 1/(l x d). The enhancement of PL emission facilitates far field spectroscopic imaging of a single semiconductor AlGaN NW of sub-wavelength dimension. (copyright 2016 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

    Science.gov (United States)

    Malinverni, M.; Lamy, J.-M.; Martin, D.; Feltin, E.; Dorsaz, J.; Castiglia, A.; Rossetti, M.; Duelk, M.; Vélez, C.; Grandjean, N.

    2014-12-01

    We demonstrate state-of-the-art p-type (Al)GaN layers deposited at low temperature (740 °C) by ammonia molecular beam epitaxy (NH3-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGaN quantum well active region. Typical p-type GaN resistivities and contact resistances are 0.4 Ω cm and 5 × 10-4 Ω cm2, respectively. As a test bed, we fabricated a hybrid laser structure emitting at 400 nm combining n-type AlGaN cladding and InGaN active region grown by metal-organic vapor phase epitaxy, with the p-doped waveguide and cladding layers grown by NH3-MBE. Single-mode ridge-waveguide LD exhibits a threshold voltage as low as 4.3 V for an 800 × 2 μm2 ridge dimension and a threshold current density of ˜5 kA cm-2 in continuous wave operation. The series resistance of the device is 6 Ω and the resistivity is 1.5 Ω cm, confirming thereby the excellent electrical properties of p-type Al0.06Ga0.94N:Mg despite the low growth temperature.

  15. Broadband biphoton generation and statistics of quantum light in the UV-visible range in an AlGaN microring resonator.

    Science.gov (United States)

    De Leonardis, Francesco; Soref, Richard A; Soltani, Mohammad; Passaro, Vittorio M N

    2017-09-12

    We present a physical investigation on the generation of correlated photon pairs that are broadly spaced in the ultraviolet (UV) and visible spectrum on a AlGaN/AlN integrated photonic platform which is optically transparent at these wavelengths. Using spontaneous four wave mixing (SFWM) in an AlGaN microring resonator, we show design techniques to satisfy the phase matching condition between the optical pump, the signal, and idler photon pairs, a condition which is essential and is a key hurdle when operating at short wavelength due to the strong normal dispersion of the material. Such UV-visible photon pairs are quite beneficial for interaction with qubit ions that are mostly in this wavelength range, and will enable heralding the photon-ion interaction. As a target application example, we present the systematic AlGaN microresonator design for generating signal and idler photon pairs using a blue wavelength pump, while the signal appears at the transition of ytterbium ion ( 171 Yb + , 369.5 nm) and the idler appears in the far blue or green range. The photon pairs have minimal crosstalk to the pump power due to their broad spacing in spectral wavelength, thereby relaxing the design of on-chip integrated filters for separating pump, signal and idler.

  16. Persistent photoconductivity in AlGaN/GaN heterojunction channels caused by the ionization of deep levels in the AlGaN barrier layer

    International Nuclear Information System (INIS)

    Murayama, H.; Akiyama, Y.; Niwa, R.; Sakashita, H.; Sakaki, H.; Kachi, T.; Sugimoto, M.

    2013-01-01

    Time-dependent responses of drain current (I d ) in an AlGaN/GaN HEMT under UV (3.3 eV) and red (2.0 eV) light illumination have been studied at 300 K and 250 K. UV illumination enhances I d by about 10 %, indicating that the density of two-dimensional electrons is raised by about 10 12 cm −2 . When UV light is turned off at 300 K, a part of increased I d decays quickly but the other part of increment is persistent, showing a slow decay. At 250 K, the majority of increment remains persistent. It is found that such a persistent increase of I d at 250 K can be partially erased by the illumination of red light. These photo-responses are explained by a simple band-bending model in which deep levels in the AlGaN barrier get positively charged by the UV light, resulting in a parabolic band bending in the AlGaN layer, while some potion of those deep levels are neutralized by the red light

  17. Localized surface plasmon enhanced deep UV-emitting of AlGaN based multi-quantum wells by Al nanoparticles on SiO2 dielectric interlayer

    Science.gov (United States)

    He, Ju; Wang, Shuai; Chen, Jingwen; Wu, Feng; Dai, Jiangnan; Long, Hanling; Zhang, Yi; Zhang, Wei; Feng, Zhe Chuan; Zhang, Jun; Du, Shida; Ye, Lei; Chen, Changqing

    2018-05-01

    In this paper, we report a 2.6-fold deep ultraviolet emission enhancement of integrated photoluminescence (PL) intensity in AlGaN-based multi-quantum wells (MQWs) by introducing the coupling of local surface plasmons from Al nanoparticles (NPs) on a SiO2 dielectric interlayer with excitons and photons in MQWs at room temperature. In comparison to bare AlGaN MQWs, a significant 2.3-fold enhancement of the internal quantum efficiency, from 16% to 37%, as well as a 13% enhancement of photon extraction efficiency have been observed in the MQWs decorated with Al NPs on SiO2 dielectric interlayer. Polarization-dependent PL measurement showed that both the transverse electric and transverse magnetic mode were stronger than the original intensity in bare AlGaN MQWs, indicating a strong LSPs coupling process and vigorous scattering ability of the Al/SiO2 composite structure. These results were confirmed by the activation energy of non-radiative recombination from temperature-dependent PL measurement and the theoretical three dimensional finite difference time domain calculations.

  18. Predicted bond length variation in wurtzite and zinc-blende InGaN and AlGaN alloys

    International Nuclear Information System (INIS)

    Mattila, T.; Zunger, A.

    1999-01-01

    Valence force field simulations utilizing large supercells are used to investigate the bond lengths in wurtzite and zinc-blende In x Ga 1-x N and Al x Ga 1-x N random alloys. We find that (i) while the first-neighbor cation endash anion shell is split into two distinct values in both wurtzite and zinc-blende alloys (R Ga-N 1 ≠R In-N 1 ), the second-neighbor cation endash anion bonds are equal (R Ga-N 2 =R In-N 2 ). (ii) The second-neighbor cation endash anion bonds exhibit a crucial difference between wurtzite and zinc-blende binary structures: in wurtzite we find two bond distances which differ in length by 13% while in the zinc-blende structure there is only one bond length. This splitting is preserved in the alloy, and acts as a fingerprint, distinguishing the wurtzite from the zinc-blende structure. (iii) The small splitting of the first-neighbor cation endash anion bonds in the wurtzite structure due to nonideal c/a ratio is preserved in the alloy, but is obscured by the bond length broadening. (iv) The cation endash cation bond lengths exhibit three distinct values in the alloy (Ga endash Ga, Ga endash In, and In endash In), while the anion endash anion bonds are split into two values corresponding to N endash Ga endash N and N endash In endash N. (v) The cation endash related splitting of the bonds and alloy broadening are considerably larger in InGaN alloy than in AlGaN alloy due to larger mismatch between the binary compounds. (vi) The calculated first-neighbor cation endash anion and cation endash cation bond lengths in In x Ga 1-x N alloy are in good agreement with the available experimental data. The remaining bond lengths are provided as predictions. In particular, the predicted splitting for the second-neighbor cation endash anion bonds in the wurtzite structure awaits experimental testing. copyright 1999 American Institute of Physics

  19. Ti/TaN Bilayer for Efficient Injection and Reliable AlGaN Nanowires LEDs

    KAUST Repository

    Priante, Davide

    2018-05-07

    Reliable operation of UV AlGaN-based nanowires-LED at high injection current was realized by incorporating a Ti-pre-orienting/TaN-diffusion-barrier bilayer, thus enhancing external quantum efficiency, and resolving the existing device degradation issue in group-III-nanowires-on-silicon devices.

  20. Ti/TaN Bilayer for Efficient Injection and Reliable AlGaN Nanowires LEDs

    KAUST Repository

    Priante, Davide; Janjua, Bilal; Prabaswara, Aditya; Subedi, Ram Chandra; Elafandy, Rami T.; Lopatin, Sergei; Anjum, Dalaver H.; Zhao, Chao; Ng, Tien Khee; Ooi, Boon S.

    2018-01-01

    Reliable operation of UV AlGaN-based nanowires-LED at high injection current was realized by incorporating a Ti-pre-orienting/TaN-diffusion-barrier bilayer, thus enhancing external quantum efficiency, and resolving the existing device degradation

  1. An Investigation of Carbon-Doping-Induced Current Collapse in GaN-on-Si High Electron Mobility Transistors

    Directory of Open Access Journals (Sweden)

    An-Jye Tzou

    2016-06-01

    Full Text Available This paper reports the successful fabrication of a GaN-on-Si high electron mobility transistor (HEMT with a 1702 V breakdown voltage (BV and low current collapse. The strain and threading dislocation density were well-controlled by 100 pairs of AlN/GaN superlattice buffer layers. Relative to the carbon-doped GaN spacer layer, we grew the AlGaN back barrier layer at a high temperature, resulting in a low carbon-doping concentration. The high-bandgap AlGaN provided an effective barrier for blocking leakage from the channel to substrate, leading to a BV comparable to the ordinary carbon-doped GaN HEMTs. In addition, the AlGaN back barrier showed a low dispersion of transiently pulsed ID under substrate bias, implying that the buffer traps were effectively suppressed. Therefore, we obtained a low-dynamic on-resistance with this AlGaN back barrier. These two approaches of high BV with low current collapse improved the device performance, yielding a device that is reliable in power device applications.

  2. Deep ultraviolet distributed Bragg reflectors based on graded composition AlGaN alloys

    Energy Technology Data Exchange (ETDEWEB)

    Brummer, Gordie, E-mail: gbrummer@bu.edu [Department of Electrical and Computer Engineering, Boston University, Boston, Massachusetts 02215 (United States); Photonics Center, Boston University, Boston, Massachusetts 02215 (United States); Nothern, Denis [Photonics Center, Boston University, Boston, Massachusetts 02215 (United States); Division of Materials Science and Engineering, Boston University, Boston, Massachusetts 02215 (United States); Nikiforov, A. Yu. [Photonics Center, Boston University, Boston, Massachusetts 02215 (United States); Moustakas, T. D., E-mail: tdm@bu.edu [Department of Electrical and Computer Engineering, Boston University, Boston, Massachusetts 02215 (United States); Photonics Center, Boston University, Boston, Massachusetts 02215 (United States); Division of Materials Science and Engineering, Boston University, Boston, Massachusetts 02215 (United States)

    2015-06-01

    Distributed Bragg reflectors (DBRs) with peak reflectivity at approximately 280 nm, based on compositionally graded Al{sub x}Ga{sub 1−x}N alloys, were grown on 6H-SiC substrates by plasma-assisted molecular beam epitaxy. DBRs with square, sinusoidal, triangular, and sawtooth composition profiles were designed with the transfer matrix method. The crystal structure of these DBRs was studied with high-resolution x-ray diffraction of the (1{sup ¯}015) reciprocal lattice point. The periodicity of the DBR profiles was confirmed with cross-sectional Z-contrast scanning transmission electron microscopy. The peak reflectance of these DBRs with 15.5 periods varies from 77% to 56% with corresponding full width at half maximum of 17–14 nm. Coupled mode analysis was used to explain the dependence of the reflectivity characteristics on the profile of the graded composition.

  3. Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

    Energy Technology Data Exchange (ETDEWEB)

    Malinverni, M., E-mail: marco.malinverni@epfl.ch; Lamy, J.-M.; Martin, D.; Grandjean, N. [ICMP, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Feltin, E.; Dorsaz, J. [NOVAGAN AG, CH-1015 Lausanne (Switzerland); Castiglia, A.; Rossetti, M.; Duelk, M.; Vélez, C. [EXALOS AG, CH-8952 Schlieren (Switzerland)

    2014-12-15

    We demonstrate state-of-the-art p-type (Al)GaN layers deposited at low temperature (740 °C) by ammonia molecular beam epitaxy (NH{sub 3}-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGaN quantum well active region. Typical p-type GaN resistivities and contact resistances are 0.4 Ω cm and 5 × 10{sup −4} Ω cm{sup 2}, respectively. As a test bed, we fabricated a hybrid laser structure emitting at 400 nm combining n-type AlGaN cladding and InGaN active region grown by metal-organic vapor phase epitaxy, with the p-doped waveguide and cladding layers grown by NH{sub 3}-MBE. Single-mode ridge-waveguide LD exhibits a threshold voltage as low as 4.3 V for an 800 × 2 μm{sup 2} ridge dimension and a threshold current density of ∼5 kA cm{sup −2} in continuous wave operation. The series resistance of the device is 6 Ω and the resistivity is 1.5 Ω cm, confirming thereby the excellent electrical properties of p-type Al{sub 0.06}Ga{sub 0.94}N:Mg despite the low growth temperature.

  4. High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AlN spacer layer

    Science.gov (United States)

    Ko, Tsung-Shine; Lin, Der-Yuh; Lin, Chia-Feng; Chang, Che-Wei; Zhang, Jin-Cheng; Tu, Shang-Ju

    2017-04-01

    In this paper, we experimentally studied the effect of AlN spacer layer on optical and electrical properties of AlGaN/GaN high electric mobility transistors (HEMTs) grown by metal organic chemical vapor deposition method. For AlGaN layer in HEMT structure, the Al composition of the sample was determined using x-ray diffraction and photoluminescence. Electrolyte electro-reflectance (EER) measurement not only confirmed the aluminum composition of AlGaN layer, but also determined the electric field strength on the AlGaN layer through the Franz-Keldysh oscillation phenomenon. This result indicated that the electric field on the AlGaN layer could be improved from 430 to 621 kV/cm when AlN spacer layer was inserted in HEMT structure, which increased the concentration of two dimensional electron gas (2DEG) and improve the mobility. The temperature dependent Hall results show that both the mobility and the carrier concentration of 2DEG would decrease abruptly causing HEMT loss of function due to phonon scattering and carrier thermal escape when temperature increases above a specific value. Meanwhile, our study also demonstrates using AlN spacer layer could be beneficial to allow the mobility and carrier density of 2DEG sustaining at high temperature region.

  5. Strain and crystalline defects in epitaxial GaN layers studied by high-resolution X-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Chierchia, Rosa

    2007-07-01

    This thesis treats strain and dislocations in MOVPE GaN layers. The mosaic structure of metalorganic vapour phase epitaxy (MOVPE)-grown GaN layers was studied in dependence on the grain diameter utilizing high-resolution XRD. Different models for the defect structure were analyzed, the edge type TD densities were calculated under the assumption that the dislocations are not randomly distributed but localized at the grain boundaries. Moreover, in situ measurements have shown that the layers are under tension in the c-plane when a nucleation layer is used. The second part of this thesis treats a particular approach to reduce dislocations in MOVPE GaN layers, i.e. maskless pendeo epitaxial growth of MOVPE GAN layers. FE simulations assuming the strain to be completely induced during cooling of the structures after growth agree only partly with experimental data. The strain state of single layers and stripes of GaN grown on SiC was studied to exploit the evolution of the strain in the different phases of the PE growth. The biaxial compressive stress, due to the lattice mismatch between the GaN layer and the AlN nucleation layer is plastically relieved before overgrowth. Temperature dependent measurements show a linear reduction of the wing tilt with increasing temperature varying from sample to sample. Bent TDs have been observed in TEM images of maskless PE samples. Stress induced from the mismatch between the AlN buffer layer and the GaN also contributes to the remaining part of the wing tilt not relieved thermally. It has to be noted that the rest tilt value varies from sample to sample at the growth temperature. In fact some of the data indicate that the wing tilt decreases with increasing V/III ratio. In the last Chapter the application of X-ray techniques for the analysis of strain and composition in layers of inhomogeneous composition is explored. In the first part of the Chapter the strain state and the Al content of AlGaN buffer layers grown directly on (0001

  6. Structural, surface potential and optical studies of AlGaN based double heterostructures irradiated by 120 MeV Si{sup 9+} swift heavy ions

    Energy Technology Data Exchange (ETDEWEB)

    Arivazhagan, P., E-mail: arivazhaganau2008@gmail.com [Crystal Growth Centre, Anna University, Chennai, 600 025 (India); Ramesh, R.; Balaji, M. [Crystal Growth Centre, Anna University, Chennai, 600 025 (India); Asokan, K. [Inter-University Accelerator Centre (IUAC), New Delhi (India); Baskar, K. [Crystal Growth Centre, Anna University, Chennai, 600 025 (India)

    2016-09-15

    The Al{sub 0.33}Ga{sub 0.77}N/Al{sub 0.14}Ga{sub 0.86}N based double heterostructure was irradiated using Si{sup 9+} ion at room temperature (RT) and liquid nitrogen temperature (LNT) with four dissimilar ion fluence. The effect of Si{sup 9+} ion irradiation in dislocation densities and in-plane strain of GaN layer were discussed. The in-plane strain values of Al{sub x}Ga{sub 1-x}N layers were calculated from asymmetric reciprocal space mapping (RSM). The surface modification and the variation in phase shift on Al{sub 0.33}Ga{sub 0.77}N surfaces due to the irradiation were measured by Electrostatic Force Microscopy (EFM). The capacitance of the tip-sample system was determined from EFM. The band edge emissions of heterostructures were measured by the room temperature phototluminescence (PL) and the shift in the Al{sub 0.14}Ga{sub 0.86}N active layer emission peaks towards the low energy side at low fluence ion irradiation has been noted. - Highlights: • Effects of Si{sup 9+} ion irradiation on AlGaN double heterostructures were investigated. • Dislocation densities of GaN reduced at liquid nitrogen temperature irradiation. • Variation in phase shift on Al{sub 0.33}Ga{sub 0.77}N surfaces was measured by EFM. • Capacitance per unit area values of AFM tip-sample surface system were calculated. • Si{sup 9+} irradiations play an important role to tune the energy gap in Al{sub 0.14}Ga{sub 0.86}N.

  7. Effects of Al content and annealing on the phases formation, lattice parameters, and magnetization of A lxF e2B2 (x =1.0 ,1.1 ,1.2 ) alloys

    Science.gov (United States)

    Levin, E. M.; Jensen, B. A.; Barua, R.; Lejeune, B.; Howard, A.; McCallum, R. W.; Kramer, M. J.; Lewis, L. H.

    2018-03-01

    AlF e2B2 is a ferromagnet with the Curie temperature around 300 K and has the potential to be an outstanding rare-earth free candidate for magnetocaloric applications. However, samples prepared from the melt contain additional phases which affect the functional response of the AlF e2B2 phase. We report on the effects of Al content in samples with the initial (nominal) composition of A lxF e2B2 , where x =1.0 , 1.1, and 1.2 prepared by arc-melting followed by suction casting and annealing. The as-cast A lxF e2B2 alloys contain AlF e2B2 as well as additional phases, including the primary solidifying FeB and A l13F e4 compounds, which are ferromagnetic and paramagnetic, respectively, at 300 K. The presence of these phases makes it difficult to extract the intrinsic magnetic properties of AlF e2B2 phase. Annealing of A lxF e2B2 alloys at 1040 °C for 3 days allows for reaction of the FeB with A l13F e4 to form the AlF e2B2 phase, significantly reduces the amount of additional phases, and results in nearly pure AlF e2B2 phase as confirmed with XRD, magnetization, scanning electron microscopy, and electronic transport. The values of the magnetization, effective magnetic moment per Fe atom, specific heat capacity, electrical resistivity, and Seebeck coefficient for the AlF e2B2 compound have been established.

  8. Raman scattering in GaN, AlN and AlGaN. Basic material properties, processing and devices

    International Nuclear Information System (INIS)

    Hayes, J.M.

    2002-05-01

    GaN, AIN and AIGaN are very promising materials for high-power, high-temperature and high-frequency electronic device applications but many of their material properties and the effects of processing steps for device fabrication have not yet been fully investigated. AIGaN/GaN films were annealed at temperatures of 800 to 1300 deg C in different ambient atmospheres. The films were then analysed by micro-Raman spectroscopy. Compressive stress was found in films annealed in oxygen containing atmospheres which was significantly enhanced by the presence of water vapour in the annealing atmosphere. No stress was detected after annealing in nitrogen even at temperatures close to the thermal decomposition temperature and in the presence of water vapour. Thermal decomposition can be prevented by the use of high-pressure atmospheres during annealing. Mg/P implanted and non-implanted GaN films annealed at temperatures up to 1500 deg C with nitrogen over-pressures of 1-1.5 GPa were analysed by micro-Raman spectroscopy. Annealing temperatures of 1400-1500 deg C resulted in the nearly full recovery of the crystalline quality of the ion-implanted GaN. Ultraviolet Raman spectroscopy showed that no significant surface degradation occurred during the annealing. High-quality bulk AIN crystals were studied by micro-Raman spectroscopy. The pressure dependence of the phonon frequencies was measured in the range 0 GPa to 9.5 GPa determining the mode-Grueneisen parameters. The temperature dependence of the phonon frequencies and lifetimes was measured from 10 K to 1275 K. Empirical fitting and theoretical modelling of the temperature dependence was performed. The results have application for the monitoring of temperature in (Ga/AI)N. The E 2 (high) phonon frequency of GaN measured by micro-Raman spectroscopy was used to monitor local temperatures in active AIGaN/GaN hetero-structure field effect transistor devices (HFETs). The temperature rise in the active area of devices on sapphire

  9. Surface photovoltage studies of p-type AlGaN layers after reactive-ion etching

    Science.gov (United States)

    McNamara, J. D.; Phumisithikul, K. L.; Baski, A. A.; Marini, J.; Shahedipour-Sandvik, F.; Das, S.; Reshchikov, M. A.

    2016-10-01

    The surface photovoltage (SPV) technique was used to study the surface and electrical properties of Mg-doped, p-type AlxGa1-xN (0.06 GaN:Mg thin films and from the predictions of a thermionic model for the SPV behavior. In particular, the SPV of the p-AlGaN:Mg layers exhibited slower-than-expected transients under ultraviolet illumination and delayed restoration to the initial dark value. The slow transients and delayed restorations can be attributed to a defective surface region which interferes with normal thermionic processes. The top 45 nm of the p-AlGaN:Mg layer was etched using a reactive-ion etch which caused the SPV behavior to be substantially different. From this study, it can be concluded that a defective, near-surface region is inhibiting the change in positive surface charge by allowing tunneling or hopping conductivity of holes from the bulk to the surface, or by the trapping of electrons traveling to the surface by a high concentration of defects in the near-surface region. Etching removes the defective layer and reveals a region of presumably higher quality, as evidenced by substantial changes in the SPV behavior.

  10. Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

    Science.gov (United States)

    Anand, M. J.; Ng, G. I.; Arulkumaran, S.; Manoj Kumar, C. M.; Ranjan, K.; Vicknesh, S.; Foo, S. C.; Syamal, B.; Zhou, X.

    2015-02-01

    The influence of electric field (EF) on the dynamic ON-resistance (dyn-RDS[ON]) and threshold-voltage shift (ΔVth) of AlGaN/GaN high electron mobility transistors on Si has been investigated using pulsed current-voltage (IDS-VDS) and drain current (ID) transients. Different EF was realized with devices of different gate-drain spacing (Lgd) under the same OFF-state stress. Under high-EF (Lgd = 2 μm), the devices exhibited higher dyn-RDS[ON] degradation but a small ΔVth (˜120 mV). However, at low-EF (Lgd = 5 μm), smaller dyn-RDS[ON] degradation but a larger ΔVth (˜380 mV) was observed. Our analysis shows that under OFF-state stress, the gate electrons are injected and trapped in the AlGaN barrier by tunnelling-assisted Poole-Frenkel conduction mechanism. Under high-EF, trapping spreads towards the gate-drain access region of the AlGaN barrier causing dyn-RDS[ON] degradation, whereas under low-EF, trapping is mostly confined under the gate causing ΔVth. A trap with activation energy 0.33 eV was identified in the AlGaN barrier by ID-transient measurements. The influence of EF on trapping was also verified by Silvaco TCAD simulations.

  11. Demonstration of InAlN/AlGaN high electron mobility transistors with an enhanced breakdown voltage by pulsed metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xue, JunShuai, E-mail: junshuaixue@hotmail.com; Zhang, JinCheng; Hao, Yue [Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2016-01-04

    In this work, InAlN/AlGaN heterostructures employing wider bandgap AlGaN instead of conventional GaN channel were grown on sapphire substrate by pulsed metal organic chemical vapor deposition, where the nominal Al composition in InAlN barrier and AlGaN channel were chosen to be 83% and 5%, respectively, to achieve close lattice-matched condition. An electron mobility of 511 cm{sup 2}/V s along with a sheet carrier density of 1.88 × 10{sup 13 }cm{sup −2} were revealed in the prepared heterostructures, both of which were lower compared with lattice-matched InAlN/GaN due to increased intrinsic alloy disorder scattering resulting from AlGaN channel and compressively piezoelectric polarization in barrier, respectively. While the high electron mobility transistor (HEMT) processed on these structures not only exhibited a sufficiently high drain output current density of 854 mA/mm but also demonstrated a significantly enhanced breakdown voltage of 87 V, which is twice higher than that of reported InAlN/GaN HEMT with the same device dimension, potential characteristics for high-voltage operation of GaN-based electronic devices.

  12. High Efficiency Light Emission Through Carrier Localization in AlGaN Alloys and Active Regions: Toward Viable Ultraviolet Light Sources for the Objective Force Warrior

    National Research Council Canada - National Science Library

    Wraback, M; Shen, H; Collins, C. J; Sampath, A. V; Garrett, G. A; Sarney, W. L; Nikiforov, A. Y; Cargill, G. S; Dierolf, V

    2004-01-01

    ...) comparable to that seen in low defect density (̂10(exp 8)/sq cm) GaN. Room temperature monochromatic scanning cathodoluminescence images at the red-shifted peak reveal spatially non-uniform emission similar to that observed in In(Al...

  13. Challenges in graphene integration for high-frequency electronics

    Science.gov (United States)

    Giannazzo, F.; Fisichella, G.; Greco, G.; Roccaforte, F.

    2016-06-01

    This paper provides an overview of the state-of-the-art research on graphene (Gr) for high-frequency (RF) devices. After discussing current limitations of lateral Gr RF transistors, novel vertical devices concepts such as the Gr Base Hot Electron Transistor (GBHET) will be introduced and the main challenges in Gr integration within these architectures will be discussed. In particular, a GBHET device based on Gr/AlGaN/GaN heterostructure will be considered. An approach to the fabrication of this heterostructure by transfer of CVD grown Gr on copper to the AlGaN surface will be presented. The morphological and electrical properties of this system have been investigated at nanoscale by atomic force microscopy (AFM) and conductive atomic force microscopy (CAFM). In particular, local current-voltage measurements by the CAFM probe revealed the formation of a Schottky contact with low barrier height (˜0.41 eV) and excellent lateral uniformity between Gr and AlGaN. Basing on the electrical parameters extracted from this characterization, the theoretical performances of a GBHET formed by a metal/Al2O3/Gr/AlGaN/GaN stack have been evaluated.

  14. Investigation of surface related leakage current in AlGaN/GaN High Electron Mobility Transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kaushik, J.K., E-mail: janeshkaushik@sspl.drdo.in [Solid State Physics Laboratory, Delhi 110054 (India); Balakrishnan, V.R.; Mongia, D.; Kumar, U.; Dayal, S. [Solid State Physics Laboratory, Delhi 110054 (India); Panwar, B.S. [Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016 (India); Muralidharan, R. [Indian Institute of Science, Bengaluru, Karnataka 560012 (India)

    2016-08-01

    This paper reports the study of surface-related mechanisms to explain the high reverse leakage current observed in the in-house fabricated Si{sub 3}N{sub 4} passivated AlGaN/GaN High Electron Mobility Transistors. We propose that the Si{sub 3}N{sub 4}/AlGaN interface in the un-gated regions provides an additional leakage path between the gate and source/drain and may constitute a large component of reverse current. This surface related leakage component of current exhibits both temperature and electric field dependence and its Arrhenius behavior has been experimentally verified using Conductance Deep Level Transient Spectroscopy and temperature dependent reverse leakage current measurements. A thin interfacial amorphous semiconductor layer formed due to inter diffusion at Si{sub 3}N{sub 4}/AlGaN interface has been presumed as the source for this surface related leakage. We, therefore, conclude that optimum Si{sub 3}N{sub 4} deposition conditions and careful surface preparation prior to passivation can limit the extent of surface leakage and can thus vastly improve the device performance. - Highlights: • Enhanced leakage in AlGaN/GaN High Electron Mobility Transistors after passivation • Experimental evidence of the presence of extrinsic traps at Si{sub 3}N{sub 4}/AlGaN interface • Electron hopping in shallower extended defects and band tail traps at the interface. • Reduction in current collapse due to the virtual gate inhibition by this conduction • However, limitation on the operating voltages due to decrease in breakdown voltage.

  15. Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

    Energy Technology Data Exchange (ETDEWEB)

    Anand, M. J., E-mail: anand2@e.ntu.edu.sg, E-mail: eging@ntu.edu.sg; Ng, G. I., E-mail: anand2@e.ntu.edu.sg, E-mail: eging@ntu.edu.sg; Syamal, B.; Zhou, X. [School of Electrical and Electronics Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Arulkumaran, S.; Manoj Kumar, C. M.; Ranjan, K.; Vicknesh, S.; Foo, S. C. [Temasek Laboratories@NTU, Nanyang Technological University, 50 Nanyang Drive, Research Techno Plaza, Singapore 637553 (Singapore)

    2015-02-23

    The influence of electric field (EF) on the dynamic ON-resistance (dyn-R{sub DS[ON]}) and threshold-voltage shift (ΔV{sub th}) of AlGaN/GaN high electron mobility transistors on Si has been investigated using pulsed current-voltage (I{sub DS}-V{sub DS}) and drain current (I{sub D}) transients. Different EF was realized with devices of different gate-drain spacing (L{sub gd}) under the same OFF-state stress. Under high-EF (L{sub gd} = 2 μm), the devices exhibited higher dyn-R{sub DS[ON]} degradation but a small ΔV{sub th} (∼120 mV). However, at low-EF (L{sub gd} = 5 μm), smaller dyn-R{sub DS[ON]} degradation but a larger ΔV{sub th} (∼380 mV) was observed. Our analysis shows that under OFF-state stress, the gate electrons are injected and trapped in the AlGaN barrier by tunnelling-assisted Poole-Frenkel conduction mechanism. Under high-EF, trapping spreads towards the gate-drain access region of the AlGaN barrier causing dyn-R{sub DS[ON]} degradation, whereas under low-EF, trapping is mostly confined under the gate causing ΔV{sub th}. A trap with activation energy 0.33 eV was identified in the AlGaN barrier by I{sub D}-transient measurements. The influence of EF on trapping was also verified by Silvaco TCAD simulations.

  16. Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

    International Nuclear Information System (INIS)

    Anand, M. J.; Ng, G. I.; Syamal, B.; Zhou, X.; Arulkumaran, S.; Manoj Kumar, C. M.; Ranjan, K.; Vicknesh, S.; Foo, S. C.

    2015-01-01

    The influence of electric field (EF) on the dynamic ON-resistance (dyn-R DS[ON] ) and threshold-voltage shift (ΔV th ) of AlGaN/GaN high electron mobility transistors on Si has been investigated using pulsed current-voltage (I DS -V DS ) and drain current (I D ) transients. Different EF was realized with devices of different gate-drain spacing (L gd ) under the same OFF-state stress. Under high-EF (L gd  = 2 μm), the devices exhibited higher dyn-R DS[ON] degradation but a small ΔV th (∼120 mV). However, at low-EF (L gd  = 5 μm), smaller dyn-R DS[ON] degradation but a larger ΔV th (∼380 mV) was observed. Our analysis shows that under OFF-state stress, the gate electrons are injected and trapped in the AlGaN barrier by tunnelling-assisted Poole-Frenkel conduction mechanism. Under high-EF, trapping spreads towards the gate-drain access region of the AlGaN barrier causing dyn-R DS[ON] degradation, whereas under low-EF, trapping is mostly confined under the gate causing ΔV th . A trap with activation energy 0.33 eV was identified in the AlGaN barrier by I D -transient measurements. The influence of EF on trapping was also verified by Silvaco TCAD simulations

  17. High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces

    International Nuclear Information System (INIS)

    Chan, Silvia H; DenBaars, Steven P; Keller, Stacia; Tahhan, Maher; Li, Haoran; Romanczyk, Brian; Mishra, Umesh K

    2016-01-01

    This paper reports high two-dimensional electron gas mobility attained from the regrowth of the AlGaN gating layer on ex situ GaN surfaces. To repair etch-damaged GaN surfaces, various pretreatments were conducted via metalorganic chemical vapor deposition, followed by a regrown AlGaN/GaN mobility test structure to evaluate the extent of recovery. The developed treatment process that was shown to significantly improve the electron mobility consisted of a N 2  + NH 3 pre-anneal plus an insertion of a 4 nm or thicker GaN interlayer prior to deposition of the AlGaN gating layer. Using the optimized process, a high electron mobility transistor (HEMT) device was fabricated which exhibited a high mobility of 1450 cm 2 V −1 s −1 (R sh  = 574 ohm/sq) and low dispersion characteristics. The additional inclusion of an in situ Al 2 O 3 dielectric into the regrowth process for MOS-HEMTs still preserved the transport properties near etch-impacted areas. (paper)

  18. Advanced in-situ control for III-nitride RF power device epitaxy

    Science.gov (United States)

    Brunner, F.; Zettler, J.-T.; Weyers, M.

    2018-04-01

    In this contribution, the latest improvements regarding wafer temperature measurement on 4H-SiC substrates and, based on this, of film thickness and composition control of GaN and AlGaN layers in power electronic device structures are presented. Simultaneous pyrometry at different wavelengths (950 nm and 405 nm) reveal the advantages and limits of the different temperature measurement approaches. Near-UV pyrometry gives a very stable wafer temperature signal without oscillations during GaN growth since the semi-insulating 4H-SiC substrate material becomes opaque at temperatures above 550 °C at the wavelength of 405 nm. A flat wafer temperature profile across the 100 mm substrate diameter is demonstrated despite a convex wafer shape at AlGaN growth conditions. Based on the precise assignment of wafer temperature during MOVPE we were able to improve the accuracy of the high-temperature n-k database for the materials involved. Consequently, the measurement accuracy of all film thicknesses grown under fixed temperature conditions improved. Comparison of in situ and ex situ determined layer thicknessess indicate an unintended etching of the topmost layer during cool-down. The details and limitations of real-time composition analysis for lower Al-content AlGaN barrier layers during transistor device epitaxy are shown.

  19. In-situ electrochemical-AFM study of localized corrosion of AlxCoCrFeNi high-entropy alloys in chloride solution

    Science.gov (United States)

    Shi, Yunzhu; Collins, Liam; Balke, Nina; Liaw, Peter K.; Yang, Bin

    2018-05-01

    In-situ electrochemical (EC)-AFM is employed to investigate the localized corrosion of the AlxCoCrFeNi high-entropy alloys (HEAs). Surface topography changes on the micro/sub-micro scale are monitored at different applied anodizing potentials in a 3.5 wt% NaCl solution. The microstructural evolutions with the increased Al content in the alloys are characterized by SEM, TEM, EDS and EBSD. The results show that by increasing the Al content, the microstructure changes from single solid-solution to multi-phases, leading to the segregations of elements. Due to the microstructural variations in the AlxCoCrFeNi HEAs, localized corrosion processes in different ways after the breakdown of the passive film, which changes from pitting to phase boundary corrosion. The XPS results indicate that an increased Al content in the alloys/phases corresponds to a decreased corrosion resistance of the surface passive film.

  20. Study of SiNx:Hy passivant layers for AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Redondo-Cubero, A.; Gago, R.; Romero, M.F.; Gonzalez-Posada, F.; Brana, A.F.; Munoz, E.; Jimenez, A.

    2008-01-01

    In this work, hydrogenated silicon nitride (SiN x :H y ) grown by chemical vapour deposition as passivant layers for high electron mobility transistors (HEMT) have been studied. The film composition and bonding structure were determined by ion beam analysis and X-ray absorption spectroscopy techniques, respectively. The effects of gas precursors (SiH 4 /N 2 and SiH 4 /NH 3 ) and film/substrate interface on the film growth have been addressed. The growth on different substrates (Si, GaN, AlGaN), and the effects of plasma pre-treatments have been studied before the growth and the film growth evolution. Results yield no significant differences in all the analysed samples. This points out the relevant role of SiHn radicals as growth precursor species and that intrinsic characteristics of the SiNx:Hy layers are not affected by the film/substrate interface. Hence, improved performance of HEMT with surface plasma pre-treatments before passivation should be related to extrinsic mechanisms (such as creation of defects in AlGaN surface, removal of the surface contamination or ion-induced roughness). (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. High Performance Enhancement-Mode AlGaN/GaN MIS-HEMT with Selective Fluorine Treatment

    Directory of Open Access Journals (Sweden)

    Chao Yang

    2015-01-01

    Full Text Available A novel enhancement-mode (E-mode Metal-Insulator-Semiconductor- (MIS- HEMT with selective fluorine ion (F− treatment is proposed and its mechanism is investigated. The HEMT features the Selective F− treatment both in the AlGaN channel region and in the thick passivation layer between the gate and drain (SFCP-MIS-HEMT. First, the F− in the passivation layer not only extends the depletion region and thus enhances the average electric field (E-field between the gate and drain by the assisted depletion effect but also reduces the E-field peak at the gate end, leading to a higher breakdown voltage (BV. Second, in the AlGaN channel region, the F− region realizes the E-mode and the region without F− maintains a high drain current (ID. Third, MIS structure suppresses the gate leakage current, increasing the gate swing voltage and the BV. Compared with a MIS-HEMT with F− treatment in whole channel (FC-MIS-HEMT, SFCP-MIS-HEMT increases the BV by 46% and the saturation drain current (ID,sat by 28%.

  2. GaN-Based High-k Praseodymium Oxide Gate MISFETs with P2S5/(NH42SX + UV Interface Treatment Technology

    Directory of Open Access Journals (Sweden)

    Chao-Wei Lin

    2012-01-01

    Full Text Available This study examines the praseodymium-oxide- (Pr2O3- passivated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs with high dielectric constant in which the AlGaN Schottky layers are treated with P2S5/(NH42SX + ultraviolet (UV illumination. An electron-beam evaporated Pr2O3 insulator is used instead of traditional plasma-assisted chemical vapor deposition (PECVD, in order to prevent plasma-induced damage to the AlGaN. In this work, the HEMTs are pretreated with P2S5/(NH42SX solution and UV illumination before the gate insulator (Pr2O3 is deposited. Since stable sulfur that is bound to the Ga species can be obtained easily and surface oxygen atoms are reduced by the P2S5/(NH42SX pretreatment, the lowest leakage current is observed in MIS-HEMT. Additionally, a low flicker noise and a low surface roughness (0.38 nm are also obtained using this novel process, which demonstrates its ability to reduce the surface states. Low gate leakage current Pr2O3 and high-k AlGaN/GaN MIS-HEMTs, with P2S5/(NH42SX + UV illumination treatment, are suited to low-noise applications, because of the electron-beam-evaporated insulator and the new chemical pretreatment.

  3. Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors

    Science.gov (United States)

    Nishiguchi, Kenya; Kaneki, Syota; Ozaki, Shiro; Hashizume, Tamotsu

    2017-10-01

    To investigate current linearity and operation stability of metal-oxide-semiconductor (MOS) AlGaN/GaN high electron mobility transistors (HEMTs), we have fabricated and characterized the Al2O3-gate MOS-HEMTs without and with a bias annealing in air at 300 °C. Compared with the as-fabricated (unannealed) MOS HEMTs, the bias-annealed devices showed improved linearity of I D-V G curves even in the forward bias regime, resulting in increased maximum drain current. Lower subthreshold slope was also observed after bias annealing. From the precise capacitance-voltage analysis on a MOS diode fabricated on the AlGaN/GaN heterostructure, it was found that the bias annealing effectively reduced the state density at the Al2O3/AlGaN interface. This led to efficient modulation of the AlGaN surface potential close to the conduction band edge, resulting in good gate control of two-dimensional electron gas density even at forward bias. In addition, the bias-annealed MOS HEMT showed small threshold voltage shift after applying forward bias stress and stable operation even at high temperatures.

  4. High-Performance Schottky Diode Gas Sensor Based on the Heterojunction of Three-Dimensional Nanohybrids of Reduced Graphene Oxide-Vertical ZnO Nanorods on an AlGaN/GaN Layer.

    Science.gov (United States)

    Minh Triet, Nguyen; Thai Duy, Le; Hwang, Byeong-Ung; Hanif, Adeela; Siddiqui, Saqib; Park, Kyung-Ho; Cho, Chu-Young; Lee, Nae-Eung

    2017-09-13

    A Schottky diode based on a heterojunction of three-dimensional (3D) nanohybrid materials, formed by hybridizing reduced graphene oxide (RGO) with epitaxial vertical zinc oxide nanorods (ZnO NRs) and Al 0.27 GaN 0.73 (∼25 nm)/GaN is presented as a new class of high-performance chemical sensors. The RGO nanosheet layer coated on the ZnO NRs enables the formation of a direct Schottky contact with the AlGaN layer. The sensing results of the Schottky diode with respect to NO 2 , SO 2 , and HCHO gases exhibit high sensitivity (0.88-1.88 ppm -1 ), fast response (∼2 min), and good reproducibility down to 120 ppb concentration levels at room temperature. The sensing mechanism of the Schottky diode can be explained by the effective modulation of the reverse saturation current due to the change in thermionic emission carrier transport caused by ultrasensitive changes in the Schottky barrier of a van der Waals heterostructure between RGO and AlGaN layers upon interaction with gas molecules. Advances in the design of a Schottky diode gas sensor based on the heterojunction of high-mobility two-dimensional electron gas channel and highly responsive 3D-engineered sensing nanomaterials have potential not only for the enhancement of sensitivity and selectivity but also for improving operation capability at room temperature.

  5. High-power light-emitting diode based facility for plant cultivation

    Energy Technology Data Exchange (ETDEWEB)

    Tamulaitis, G [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius (Lithuania); Duchovskis, P [Lithuanian Institute of Horticulture, Babtai, LT-54333 Kaunas District (Lithuania); Bliznikas, Z [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius (Lithuania); Breive, K [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius (Lithuania); Ulinskaite, R [Lithuanian Institute of Horticulture, Babtai, LT-54333 Kaunas District (Lithuania); Brazaityte, A [Lithuanian Institute of Horticulture, Babtai, LT-54333 Kaunas District (Lithuania); Novickovas, A [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius (Lithuania); Zukauskas, A [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius (Lithuania)

    2005-09-07

    Based on perspectives of the development of semiconductor materials systems for high-power light-emitting diodes (LEDs), an illumination facility for greenhouse plant cultivation was designed with the dominating 640 nm photosynthetically active component delivered by AlGaInP LEDs and supplementary components from AlGaN (photothropic action, 455 nm) and AlGaAs (photosynthetic 660 nm and photomorphogenetic 735 nm) LEDs. Photosynthesis intensity, photosynthetic productivity and growth morphology as well as chlorophyll and phytohormone concentrations were investigated in radish and lettuce grown in phytotron chambers under the LED-based illuminators and under high-pressure sodium (HPS) lamps with an equivalent photon flux density. Advantages of the high-power LED-based illuminators over conventional HPS lamps, applicability of AlGaInP LEDs for photosynthesis and control of plant growth by circadian manipulation of a relatively weak far-red component were demonstrated.

  6. High-power light-emitting diode based facility for plant cultivation

    International Nuclear Information System (INIS)

    Tamulaitis, G; Duchovskis, P; Bliznikas, Z; Breive, K; Ulinskaite, R; Brazaityte, A; Novickovas, A; Zukauskas, A

    2005-01-01

    Based on perspectives of the development of semiconductor materials systems for high-power light-emitting diodes (LEDs), an illumination facility for greenhouse plant cultivation was designed with the dominating 640 nm photosynthetically active component delivered by AlGaInP LEDs and supplementary components from AlGaN (photothropic action, 455 nm) and AlGaAs (photosynthetic 660 nm and photomorphogenetic 735 nm) LEDs. Photosynthesis intensity, photosynthetic productivity and growth morphology as well as chlorophyll and phytohormone concentrations were investigated in radish and lettuce grown in phytotron chambers under the LED-based illuminators and under high-pressure sodium (HPS) lamps with an equivalent photon flux density. Advantages of the high-power LED-based illuminators over conventional HPS lamps, applicability of AlGaInP LEDs for photosynthesis and control of plant growth by circadian manipulation of a relatively weak far-red component were demonstrated

  7. New GaN based HEMT with Si3N4 or un-doped region in the barrier for high power applications

    Science.gov (United States)

    Razavi, S. M.; Tahmasb Pour, S.; Najari, P.

    2018-06-01

    New AlGaN/GaN high electron mobility transistors (HEMTs) that their barrier layers under the gate are divided into two regions horizontally are presented in this work. Upper region is Si3N4 (SI-HEMT) or un-doped AlGaN (UN-HEMT) and lower region is AlGaN with heavier doping compared to barrier layer. Upper region in SI-HEMT and UN-HEMT reduces peak electric field in the channel and then improves breakdown voltage considerably. Lower region increases electron density in the two dimensional electron gas (2-DEG) and enhances drain current significantly. For instance, saturated drain current in SI-HEMT is about 100% larger than that in the conventional one. Moreover, the maximum breakdown voltage in the proposed structures is 65 V. This value is about 30% larger than that in the conventional transistor (50 V). Also, suggested structure reduces short channel effect such as DIBL. The maximum gm is obtained in UN-HEMT and conventional devices. Proposed structures improve breakdown voltage and saturated drain current and then enhance maximum output power density. Maximum output power density in the new structures is about 150% higher than that in the conventional.

  8. Study of SiN{sub x}:H{sub y} passivant layers for AlGaN/GaN high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Redondo-Cubero, A. [Instituto de Sistemas Optoelectronicos y Microtecnologia and Dpto. Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, 28040 Madrid (Spain); Centro de Micro-Analisis de Materiales, Universidad Autonoma de Madrid, 28049 Madrid (Spain); Gago, R. [Centro de Micro-Analisis de Materiales, Universidad Autonoma de Madrid, 28049 Madrid (Spain); Romero, M.F.; Gonzalez-Posada, F.; Brana, A.F.; Munoz, E. [Instituto de Sistemas Optoelectronicos y Microtecnologia and Dpto. Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, 28040 Madrid (Spain); Jimenez, A. [Instituto de Sistemas Optoelectronicos y Microtecnologia and Dpto. Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, 28040 Madrid (Spain); Dpto. Electronica, Escuela Politecnica, Universidad de Alcala, 28805 Alcala de Henares (Spain)

    2008-07-01

    In this work, hydrogenated silicon nitride (SiN{sub x}:H{sub y}) grown by chemical vapour deposition as passivant layers for high electron mobility transistors (HEMT) have been studied. The film composition and bonding structure were determined by ion beam analysis and X-ray absorption spectroscopy techniques, respectively. The effects of gas precursors (SiH{sub 4}/N{sub 2} and SiH{sub 4}/NH{sub 3}) and film/substrate interface on the film growth have been addressed. The growth on different substrates (Si, GaN, AlGaN), and the effects of plasma pre-treatments have been studied before the growth and the film growth evolution. Results yield no significant differences in all the analysed samples. This points out the relevant role of SiHn radicals as growth precursor species and that intrinsic characteristics of the SiNx:Hy layers are not affected by the film/substrate interface. Hence, improved performance of HEMT with surface plasma pre-treatments before passivation should be related to extrinsic mechanisms (such as creation of defects in AlGaN surface, removal of the surface contamination or ion-induced roughness). (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors.

    Science.gov (United States)

    Fontserè, A; Pérez-Tomás, A; Placidi, M; Llobet, J; Baron, N; Chenot, S; Cordier, Y; Moreno, J C; Jennings, M R; Gammon, P M; Fisher, C A; Iglesias, V; Porti, M; Bayerl, A; Lanza, M; Nafría, M

    2012-10-05

    AlGaN/GaN HEMTs are devices which are strongly influenced by surface properties such as donor states, roughness or any kind of inhomogeneity. The electron gas is only a few nanometers away from the surface and the transistor forward and reverse currents are considerably affected by any variation of surface property within the atomic scale. Consequently, we have used the technique known as conductive AFM (CAFM) to perform electrical characterization at the nanoscale. The AlGaN/GaN HEMT ohmic (drain and source) and Schottky (gate) contacts were investigated by the CAFM technique. The estimated area of these highly conductive pillars (each of them of approximately 20-50 nm radius) represents around 5% of the total contact area. Analogously, the reverse leakage of the gate Schottky contact at the nanoscale seems to correlate somehow with the topography of the narrow AlGaN barrier regions producing larger currents.

  10. Designing novel bulk metallic glass composites with a high aluminum content.

    Science.gov (United States)

    Chen, Z P; Gao, J E; Wu, Y; Wang, H; Liu, X J; Lu, Z P

    2013-11-27

    The long-standing challenge for forming Al-based BMGs and their matrix composites with a critical size larger than 1 mm have not been answered over the past three decades. In this paper, we reported formation of a series of BMG matrix composites which contain a high Al content up to 55 at.%. These composites can be cast at extraordinarily low cooling rates, compatible with maximum rod diameters of over a centimetre in copper mold casting. Our results indicate that proper additions of transition element Fe which have a positive heat of mixing with the main constituents La and Ce can appreciably improve the formability of the BMG matrix composites by suppressing the precipitation of Al(La,Ce) phase resulted from occurrence of the phase separation. However, the optimum content of Fe addition is strongly dependant on the total amount of the Al content in the Al-(CoCu)-(La,Ce) alloys.

  11. Oxygen-induced high diffusion rate of magnesium dopants in GaN/AlGaN based UV LED heterostructures.

    Science.gov (United States)

    Michałowski, Paweł Piotr; Złotnik, Sebastian; Sitek, Jakub; Rosiński, Krzysztof; Rudziński, Mariusz

    2018-05-23

    Further development of GaN/AlGaN based optoelectronic devices requires optimization of the p-type material growth process. In particular, uncontrolled diffusion of Mg dopants may decrease the performance of a device. Thus it is meaningful to study the behavior of Mg and the origins of its diffusion in detail. In this work we have employed secondary ion mass spectrometry to study the diffusion of magnesium in GaN/AlGaN structures. We show that magnesium has a strong tendency to form Mg-H complexes which immobilize Mg atoms and restrain their diffusion. However, these complexes are not present in samples post-growth annealed in an oxygen atmosphere or Al-rich AlGaN structures which naturally have a high oxygen concentration. In these samples, more Mg atoms are free to diffuse and thus the average diffusion length is considerably larger than for a sample annealed in an inert atmosphere.

  12. High-power AlGaN-based near-ultraviolet light-emitting diodes grown on Si(111)

    Science.gov (United States)

    Li, Zengcheng; Liu, Legong; Huang, Yingnan; Sun, Qian; Feng, Meixin; Zhou, Yu; Zhao, Hanmin; Yang, Hui

    2017-07-01

    High-power AlGaN-based 385 nm near-ultraviolet light-emitting diodes (UVA-LEDs) grown on Si(111) substrates are reported. The threading dislocation (TD) density of AlGaN was reduced by employing an Al-composition step-graded AlN/AlGaN multilayer buffer. V-shaped pits were intentionally incorporated into the active region to screen the carriers from the nonradiative recombination centers (NRCs) around the TDs and to facilitate hole injection. The light extraction efficiency was enhanced by the surface roughening of a thin-film (TF) vertical chip structure. The as-fabricated TF-UVA-LED exhibited a light output power of 960 mW at 500 mA, corresponding to an external quantum efficiency of 59.7%.

  13. Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Naresh-Kumar, G., E-mail: naresh.gunasekar@strath.ac.uk; Trager-Cowan, C. [Dept of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom); Vilalta-Clemente, A.; Morales, M.; Ruterana, P. [CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN 14050 Caen Cedex (France); Pandey, S.; Cavallini, A.; Cavalcoli, D. [Dipartimento di Fisica Astronomia, Università di Bologna, 40127 Bologna (Italy); Skuridina, D.; Vogt, P.; Kneissl, M. [Institute of Solid State Physics, Technical University Berlin, 10623 Berlin (Germany); Behmenburg, H.; Giesen, C.; Heuken, M. [AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath (Germany); Gamarra, P.; Di Forte-Poisson, M. A. [Thales Research and Technology, III-V Lab, 91460 Marcoussis (France); Patriarche, G. [LPN, Route de Nozay, 91460 Marcoussis (France); Vickridge, I. [Institut des NanoSciences, Université Pierre et Marie Curie, 75015 Paris (France)

    2014-12-15

    We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(Ga)N(33nm barrier)/Al(Ga)N(1nm interlayer)/GaN(3μm)/ AlN(100nm)/Al{sub 2}O{sub 3} high electron mobility transistor (HEMT) heterostructure grown by metal organic vapor phase epitaxy (MOVPE). In particular we reveal and discuss the role of unintentional Ga incorporation in the barrier and also in the interlayer. The observation of unintentional Ga incorporation by using energy dispersive X–ray spectroscopy analysis in a scanning transmission electron microscope is supported with results obtained for samples with a range of AlN interlayer thicknesses grown under both the showerhead as well as the horizontal type MOVPE reactors. Poisson–Schrödinger simulations show that for high Ga incorporation in the Al(Ga)N interlayer, an additional triangular well with very small depth may be exhibited in parallel to the main 2–DEG channel. The presence of this additional channel may cause parasitic conduction and severe issues in device characteristics and processing. Producing a HEMT structure with InAlGaN as the barrier and AlGaN as the interlayer with appropriate alloy composition may be a possible route to optimization, as it might be difficult to avoid Ga incorporation while continuously depositing the layers using the MOVPE growth method. Our present work shows the necessity of a multicharacterization approach to correlate structural and electrical properties to understand device structures and their performance.

  14. Multicharacterization approach for studying InAl(GaN/Al(GaN/GaN heterostructures for high electron mobility transistors

    Directory of Open Access Journals (Sweden)

    G. Naresh-Kumar

    2014-12-01

    Full Text Available We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(GaN(33nm barrier/Al(GaN(1nm interlayer/GaN(3μm/ AlN(100nm/Al2O3 high electron mobility transistor (HEMT heterostructure grown by metal organic vapor phase epitaxy (MOVPE. In particular we reveal and discuss the role of unintentional Ga incorporation in the barrier and also in the interlayer. The observation of unintentional Ga incorporation by using energy dispersive X–ray spectroscopy analysis in a scanning transmission electron microscope is supported with results obtained for samples with a range of AlN interlayer thicknesses grown under both the showerhead as well as the horizontal type MOVPE reactors. Poisson–Schrödinger simulations show that for high Ga incorporation in the Al(GaN interlayer, an additional triangular well with very small depth may be exhibited in parallel to the main 2–DEG channel. The presence of this additional channel may cause parasitic conduction and severe issues in device characteristics and processing. Producing a HEMT structure with InAlGaN as the barrier and AlGaN as the interlayer with appropriate alloy composition may be a possible route to optimization, as it might be difficult to avoid Ga incorporation while continuously depositing the layers using the MOVPE growth method. Our present work shows the necessity of a multicharacterization approach to correlate structural and electrical properties to understand device structures and their performance.

  15. Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

    International Nuclear Information System (INIS)

    Dasgupta, Sansaptak; Nidhi,; Brown, David F.; Wu, Feng; Keller, Stacia; Speck, James S.; Mishra, Umesh K.

    2010-01-01

    Ultralow Ohmic contact resistance and a self-aligned device structure are necessary to reduce the effect of parasitic elements and obtain higher f t and f max in high electron mobility transistors (HEMTs). N-polar (0001) GaN HEMTs, offer a natural advantage over Ga-polar HEMTs, in terms of contact resistance since the contact is not made through a high band gap material [Al(Ga)N]. In this work, we extend the advantage by making use of polarization induced three-dimensional electron-gas through regrowth of graded InGaN and thin InN cap in the contact regions by plasma (molecular beam epitaxy), to obtain an ultralow Ohmic contact resistance of 27 Ω μm to a GaN 2DEG.

  16. Crystal structure and elasticity of Al-bearing phase H under high pressure

    Directory of Open Access Journals (Sweden)

    Guiping Liu

    2018-05-01

    Full Text Available Al has significant effect on properties of minerals. We reported crystal structure and elasticity of phase H, an important potential water reservoir in the mantle, which contains different Al using first principles simulations for understanding the effect of Al on the phase H. The crystal and elastic properties of Al end-member phase H (Al2O4H2 are very different from Mg end-member (MgSiO4H2 phase H and two aluminous phase H (Mg0.875Si0.875Al0.25O4H2 (12.5at%Al and Mg0.75Si0.75Al0.5O4H2 (25at% Al. However differences between Mg end-member phase H and aluminous phase H are slight except for the O-H bond length and octahedron volume. Al located at different crystal positions (original Mg or Si position of aluminous phase H has different AlO6 octahedral volumes. For three Al-bearing phase H, bulk modulus (K, shear modulus (G, compressional wave velocity (Vp and shear wave velocity (Vs increase with increasing Al content. Under high pressure, density of phase H increases with increasing Al content. The Al content affects the symmetry of the phase H and then affects the density and elastic constants of phase H. The total ground energy of phase H also increases with increasing Al content. So an energy barrier for the formation of solid solution of phase H with δ-phase AlOOH is expected. However, if the phase H with δ-phase AlOOH solid solution does exit in the mantle, it may become an important component of the mantle or leads to a low velocity layer at the mantle.

  17. Martensitic transformations and the shape memory effect in Ti-Zr-Nb-Al high-temperature shape memory alloys

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Fei; Yu, Zhiguo; Xiong, Chengyang [School of Materials Science and Engineering, Beihang University, Beijing 100191 (China); Key Laboratory of Aerospace Materials and Performance (Ministry of Education), Beihang University, Beijing 100191 (China); Qu, Wentao; Yuan, Bifei [School of Mechanical Engineering, Xi’an Shiyou University, Xi’an 710065 (China); Wang, Zhenguo [School of Materials Science and Engineering, Beihang University, Beijing 100191 (China); Key Laboratory of Aerospace Materials and Performance (Ministry of Education), Beihang University, Beijing 100191 (China); Li, Yan, E-mail: liyan@buaa.edu.cn [School of Materials Science and Engineering, Beihang University, Beijing 100191 (China); Key Laboratory of Aerospace Materials and Performance (Ministry of Education), Beihang University, Beijing 100191 (China)

    2017-01-02

    The microstructures, phase transformations, mechanical properties and shape memory effect of Ti-20Zr-10Nb-xAl (x=1, 2, 3, 4 at%) alloys were investigated. The X-ray diffraction results show that the alloys are composed of a single martensitic α″-phase and that the corresponding unit cell volume decreases with increasing Al content. The reverse martensitic transformation start temperature (A{sub s}) of the Ti-20Zr-10Nb-Al alloy is 534 K and decreases with increasing Al content. The addition of Al results in solid solution strengthening and grain refinement strengthening, thus improving the mechanical properties and the shape memory effect of the Ti-20Zr-10 Nb-xAl alloys. The Ti-20Zr-10Nb-3Al alloy shows the greatest shape memory strain (3.2%) and the largest tensile strain (17.6%) as well as a very high tensile strength (886 MPa).

  18. Impact of pulse duration in high power impulse magnetron sputtering on the low-temperature growth of wurtzite phase (Ti,Al)N films with high hardness

    Energy Technology Data Exchange (ETDEWEB)

    Shimizu, Tetsuhide, E-mail: simizu-tetuhide@tmu.ac.jp [Division of Human Mechatronics Systems, Graduate School of System Design, Tokyo Metropolitan University, 6-6, Asahigaoka, Hino-shi, 191-0065 Tokyo (Japan); Teranishi, Yoshikazu; Morikawa, Kazuo; Komiya, Hidetoshi; Watanabe, Tomotaro; Nagasaka, Hiroshi [Surface Finishing Technology Group, Tokyo Metropolitan Industrial Technology Research Institute, 2-4-10, Aomi, Kohtoh-ku, 135-0064 Tokyo (Japan); Yang, Ming [Division of Human Mechatronics Systems, Graduate School of System Design, Tokyo Metropolitan University, 6-6, Asahigaoka, Hino-shi, 191-0065 Tokyo (Japan)

    2015-04-30

    (Ti,Al)N films were deposited from a Ti{sub 0.33}Al{sub 0.67} alloy target with a high Al content at a substrate temperature of less than 150 °C using high power impulse magnetron sputtering (HIPIMS) plasma. The pulse duration was varied from 60 to 300 μs with a low frequency of 333 Hz to investigate the effects on the dynamic variation of the substrate temperature, microstructural grain growth and the resulting mechanical properties. The chemical composition, surface morphology and phase composition of the films were analyzed by energy dispersive spectroscopy, scanning electron microscopy and X-ray diffraction, respectively. Mechanical properties were additionally measured by using a nanoindentation tester. A shorter pulse duration resulted in a lower rate of increase in the substrate temperature with an exponentially higher peak target current. The obtained films had a high Al content of 70–73 at.% with a mixed highly (0002) textured wurtzite phase and a secondary phase of cubic (220) grains. Even with the wurtzite phase and the relatively high Al contents of more than 70 at.%, the films exhibited a high hardness of more than 30 GPa with a relatively smooth surface of less than 2 nm root-mean-square roughness. The hardest and smoothest surfaces were obtained for pulses with an intermediate duration of 150 μs. The differences between the obtained film properties under different pulse durations are discussed on the basis of the grain growth process observed by transmission electron microscopy. The feasibility of the low-temperature synthesis of AlN rich wurtzite phase (Ti,Al)N films with superior hardness by HIPIMS plasma duration was demonstrated. - Highlights: • Low temperature synthesis of AlN rich wurtzite phase (Ti,Al)N film was demonstrated. • 1 μm-thick TiAlN film was deposited under the temperature less than 150 °C by HIPIMS. • High Al content with highly (0002) textured wurtzite phase structure was obtained. • High hardness of 35 GPa were

  19. Effect of Annealing Temperature on the Microstructure, Tensile Properties, and Fracture Behavior of Cold-Rolled High-Mn Light-Weight Steels

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jae-Hyun; Cho, Kyung Mox [Pusan National University, Busan (Korea, Republic of); Park, Seong-Jun; Moon, Joonoh; Kang, Jun-Yun; Park, Jun-Young; Lee, Tae-Ho [Korea Institute of Materials Science, Changwon (Korea, Republic of)

    2017-05-15

    The effects of the annealing temperature on the microstructure and tensile properties of cold-rolled light-weight steels are investigated using two Fe-30Mn-xAl-0.9C alloys that contain different Al content. The initial alloy microstructure is composed of a single austenite or a mixture of austenite and ferrite depending on the nominal aluminum content. For the alloy with 9 wt%Al content, the recrystallization and grain growth of austenite occurrs depending on the annealing temperature. However, for the alloy with 11 wt%Al content, the β-Mn phase is observed after annealing for 10 min at 550~800 ℃. The β-Mn transformation kinetics is the fastest at 700 ℃. The formation of the β-Mn phase has a detrimental effect on the ductility, and this leads to significant decreases in the total elongation. The same alloy also forms κ-carbide and DO3 ordering at 550~900 ℃. The investigated alloys exhibit a fully recrystallized microstructure after annealing at 900 ℃ for 10 min, which results in a high total elongation of 25~55%with a high tensile strength of 900~1170 MPa.

  20. Enhancement of TE polarized light extraction efficiency in nanoscale (AlN)m /(GaN)n (m>n) superlattice substitution for Al-rich AlGaN disorder alloy: ultra-thin GaN layer modulation

    International Nuclear Information System (INIS)

    Jiang, Xin-he; Shi, Jun-jie; Zhong, Hong-xia; Huang, Pu; Ding, Yi-min; Yu, Tong-jun; Shen, Bo; Lu, Jing; Zhang, Min; Wang, Xihua

    2014-01-01

    The problem of achieving high light extraction efficiency in Al-rich Al x Ga 1−x N is of paramount importance for the realization of AlGaN-based deep ultraviolet (DUV) optoelectronic devices. To solve this problem, we investigate the microscopic mechanism of valence band inversion and light polarization, a crucial factor for enhancing light extraction efficiency, in Al-rich Al x Ga 1−x N alloy using the Heyd–Scuseria–Ernzerhof hybrid functional, local-density approximation with 1/2 occupation, and the Perdew–Burke–Ernzerhof functional, in which the spin–orbit coupling effect is included. We find that the microscopic Ga-atom distribution can effectively modulate the valence band structure of Al-rich Al x Ga 1−x N. Moreover, we prove that the valence band arrangement in the decreasing order of heavy hole, light hole, and crystal-field split-off hole can be realized by using nanoscale (AlN) m /(GaN) n (m>n) superlattice (SL) substituting for Al-rich Al x Ga 1−x N disorder alloy as the active layer of optoelectronic devices due to the ultra-thin GaN layer modulation. The valence band maximum, i.e., the heavy hole band, has p x - and p y -like characteristics and is highly localized in the SL structure, which leads to the desired transverse electric (TE) polarized (E⊥c) light emission with improved light extraction efficiency in the DUV spectral region. Some important band-structure parameters and electron/hole effective masses are also given. The physical origin for the valence band inversion and TE polarization in (AlN) m /(GaN) n SL is analyzed in depth. (paper)

  1. Corrosion behaviour of high temperature alloys in impure helium environments

    International Nuclear Information System (INIS)

    Shindo, Masami; Quadakkers, W.J.; Schuster, H.

    1986-01-01

    Corrosion tests with Ni-base high temperature alloys were carried out at 900 and 950 0 C in simulated high temperature reactor helium environments. It is shown that the carburization and decarburization behaviour is strongly affected by the Cr and Ti(Al) contents of the alloys. In carburizing environments, additions of Ti, alone or in combination with Al, significantly improve the carburization resistance. In oxidizing environment, the alloys with high Cr and Al(Ti) contents are the most resistant against decarburization. In this environment alloys with additions of Ti and Al show poor oxidation resistance. The experimental results obtained are compared with a recently developed theory describing corrosion of high temperature alloys in high temperature reactor helium environments. (orig.)

  2. Photoluminescence efficiency in AlGaN quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Tamulaitis, G.; Mickevičius, J. [Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Sauletekio av. 9-III, Vilnius LT-10222 (Lithuania); Jurkevičius, J., E-mail: jonas.jurkevicius@ff.vu.lt [Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Sauletekio av. 9-III, Vilnius LT-10222 (Lithuania); Shur, M.S. [Department of ECE and CIE, Rensselaer Polytechnic Institute (United States); Shatalov, M.; Yang, J.; Gaska, R. [Sensor Electronic Technology, Inc. (United States)

    2014-11-15

    Photoluminescence spectroscopy of AlGaN/AlGaN multiple quantum wells under quasi-steady-state conditions in the temperature range from 8 to 300 K revealed a strong dependence of droop onset threshold on temperature that was explained by the influence of carrier delocalization. The delocalization at room temperature results predominantly in enhancement of bimolecular radiative recombination, while being favorable for enhancement of nonradiative recombination at low temperatures. Studies of stimulated emission confirmed the strong influence of carrier localization on droop.

  3. Basic Equations for the Modeling of Gallium Nitride (gan) High Electron Mobility Transistors (hemts)

    Science.gov (United States)

    Freeman, Jon C.

    2003-01-01

    Gallium nitride (GaN) is a most promising wide band-gap semiconductor for use in high-power microwave devices. It has functioned at 320 C, and higher values are well within theoretical limits. By combining four devices, 20 W has been developed at X-band. GaN High Electron Mobility Transistors (HEMTs) are unique in that the two-dimensional electron gas (2DEG) is supported not by intentional doping, but instead by polarization charge developed at the interface between the bulk GaN region and the AlGaN epitaxial layer. The polarization charge is composed of two parts: spontaneous and piezoelectric. This behavior is unlike other semiconductors, and for that reason, no commercially available modeling software exists. The theme of this document is to develop a self-consistent approach to developing the pertinent equations to be solved. A Space Act Agreement, "Effects in AlGaN/GaN HEMT Semiconductors" with Silvaco Data Systems to implement this approach into their existing software for III-V semiconductors, is in place (summer of 2002).

  4. Effect of Variation of Silicon Nitride Passivation Layer on Electron Irradiated Aluminum Gallium Nitride/Gallium Nitride HEMT Structures

    Science.gov (United States)

    2014-06-19

    family have (0001) interfaces which bear a surface charge σ0 that results from the polarizations of the two alloys at the interface...function of the Al content of the AlGaN barrier, as well as its thickness (Kocan, 2003; Lenka and Panda , 2011). In my dissertation, the surface...incorporation.” Applied Physics Letters, 71 (1997): 1359. Lenka, T. R., and Panda , A. K.. “Effect of structural parameters of 2DEG and C~V

  5. Nanostructured High Performance Ultraviolet and Blue Light Emitting Diodes for Solid State Lighting

    Energy Technology Data Exchange (ETDEWEB)

    Arto V. Nurmikko; Jung Han

    2007-03-31

    We report on research results in this project which synergize advanced material science approaches with fundamental optical physics concepts pertaining to light-matter interaction, with the goal of solving seminal problems for the development of very high performance light emitting diodes (LEDs) in the blue and near ultraviolet for Solid State Lighting applications. Accomplishments in the duration of the contract period include (i) new means of synthesizing AlGaN and InN quantum dots by droplet heteroepitaxy, (ii) synthesis of AlGaInN nanowires as building blocks for GaN-based microcavity devices, (iii) progress towards direct epitaxial alignment of the dense arrays of nanowires, (iv) observation and measurements of stimulated emission in dense InGaN nanopost arrays, (v) design and fabrication of InGaN photonic crystal emitters, and (vi) observation and measurements of enhanced fluorescence from coupled quantum dot and plasmonic nanostructures. The body of results is presented in this report shows how a solid foundation has been laid, with several noticeable accomplishments, for innovative research, consistent with the stated milestones.

  6. High Stability Performance of Quinary Indium Gallium Zinc Aluminum Oxide Films and Thin-Film Transistors Deposited Using Vapor Cooling Condensation Method

    Science.gov (United States)

    Lin, Yung-Hao; Lee, Ching-Ting

    2017-08-01

    High-quality indium gallium zinc aluminum oxide (IGZAO) thin films with various Al contents have been deposited using the vapor cooling condensation method. The electron mobility of the IGZAO films was improved by 89.4% on adding Al cation to IGZO film. The change in the electron concentration and mobility of the IGZAO films was 7.3% and 7.0%, respectively, when the temperature was changed from 300 K to 225 K. These experimental results confirm the high performance and stability of the IGZAO films. The performance stability mechanisms of IGZAO thin-film transistors (TFTs) were investigated in comparison with IGZO TFTs.

  7. High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Wen-Ping, Gu; Huan-Tao, Duan; Jin-Yu, Ni; Yue, Hao; Jin-Cheng, Zhang; Qian, Feng; Xiao-Hua, Ma

    2009-01-01

    AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated by employing SiN passivation, this paper investigates the degradation due to the high-electric-field stress. After the stress, a recoverable degradation has been found, consisting of the decrease of saturation drain current I Dsat , maximal transconductance g m , and the positive shift of threshold voltage V TH at high drain-source voltage V DS . The high-electric-field stress degrades the electric characteristics of AlGaN/GaN HEMTs because the high field increases the electron trapping at the surface and in AlGaN barrier layer. The SiN passivation of AlGaN/GaN HEMTs decreases the surface trapping and 2DEG depletion a little during the high-electric-field stress. After the hot carrier stress with V DS = 20 V and V GS = 0 V applied to the device for 10 4 sec, the SiN passivation decreases the stress-induced degradation of I Dsat from 36% to 30%. Both on-state and pulse-state stresses produce comparative decrease of I Dsat , which shows that although the passivation is effective in suppressing electron trapping in surface states, it does not protect the device from high-electric-field degradation in nature. So passivation in conjunction with other technological solutions like cap layer, prepassivation surface treatments, or field-plate gate to weaken high-electric-field degradation should be adopted. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  8. Sodium beta-alumina thin films as gate dielectrics for AlGaN/GaN metal—insulator—semiconductor high-electron-mobility transistors

    International Nuclear Information System (INIS)

    Tian Ben-Lang; Chen Chao; Li Yan-Rong; Zhang Wan-Li; Liu Xing-Zhao

    2012-01-01

    Sodium beta-alumina (SBA) is deposited on AlGaN/GaN by using a co-deposition process with sodium and Al 2 O 3 as the precursors. The X-ray diffraction (XRD) spectrum reveals that the deposited thin film is amorphous. The binding energy and composition of the deposited thin film, obtained from the X-ray photoelectron spectroscopy (XPS) measurement, are consistent with those of SBA. The dielectric constant of the SBA thin film is about 50. Each of the capacitance—voltage characteristics obtained at five different frequencies shows a high-quality interface between SBA and AlGaN. The interface trap density of metal—insulator—semiconductor high-electron-mobility transistor (MISHEMT) is measured to be (3.5∼9.5)×10 10 cm −2 ·eV −1 by the conductance method. The fixed charge density of SBA dielectric is on the order of 2.7×10 12 cm −2 . Compared with the AlGaN/GaN metal—semiconductor heterostructure high-electron-mobility transistor (MESHEMT), the AlGaN/GaN MISHEMT usually has a threshold voltage that shifts negatively. However, the threshold voltage of the AlGaN/GaN MISHEMT using SBA as the gate dielectric shifts positively from −5.5 V to −3.5 V. From XPS results, the surface valence-band maximum (VBM-EF) of AlGaN is found to decrease from 2.56 eV to 2.25 eV after the SBA thin film deposition. The possible reasons why the threshold voltage of AlGaN/GaN MISHEMT with the SBA gate dielectric shifts positively are the influence of SBA on surface valence-band maximum (VBM-EF), the reduction of interface traps and the effects of sodium ions, and/or the fixed charges in SBA on the two-dimensional electron gas (2DEG). (condensed matter: structural, mechanical, and thermal properties)

  9. Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons

    Energy Technology Data Exchange (ETDEWEB)

    Meneghini, M., E-mail: matteo.meneghini@dei.unipd.it; Bisi, D.; Meneghesso, G.; Zanoni, E. [Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova (Italy); Marcon, D.; Stoffels, S.; Van Hove, M.; Wu, T.-L.; Decoutere, S. [IMEC, Kapeldreef 75, 3001 Heverlee (Belgium)

    2014-04-07

    This paper describes an extensive analysis of the role of off-state and semi-on state bias in inducing the trapping in GaN-based power High Electron Mobility Transistors. The study is based on combined pulsed characterization and on-resistance transient measurements. We demonstrate that—by changing the quiescent bias point from the off-state to the semi-on state—it is possible to separately analyze two relevant trapping mechanisms: (i) the trapping of electrons in the gate-drain access region, activated by the exposure to high drain bias in the off-state; (ii) the trapping of hot-electrons within the AlGaN barrier or the gate insulator, which occurs when the devices are operated in the semi-on state. The dependence of these two mechanisms on the bias conditions and on temperature, and the properties (activation energy and cross section) of the related traps are described in the text.

  10. High-resolution hydrogen profiling in AlGaN/GaN heterostructures grown by different epitaxial methods

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-Posada Flores, F; Redondo-Cubero, A; Bengoechea, A; Brana, A F; Munoz, E [Instituto de Sistemas Optoelectronicos y Microtecnologia (ISOM) and Dpto. IngenierIa Electronica (DIE), ETSI de Telecomunicacion, Universidad Politecnica de Madrid, E-28040 Madrid (Spain); Gago, R [Centro de Micro-Analisis de Materiales, Universidad Autonoma de Madrid, E-28049 Madrid (Spain); Jimenez, A [Dpto. Electronica, Escuela Politecnica Superior, Universidad de Alcala, E-28805 Alcala de Henares, Madrid (Spain); Grambole, D, E-mail: fposada@die.upm.e [Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, PF 51019, D-01314 Dresden (Germany)

    2009-03-07

    Hydrogen (H) incorporation into AlGaN/GaN heterostructures used in high electron mobility transistors, grown by different methods, is studied by high-resolution depth profiling. Samples grown on sapphire and Si(1 1 1) substrates by molecular-beam epitaxy and metal-organic vapour phase epitaxy; involving H-free and H-containing precursors, were analysed to evaluate the eventual incorporation of H into the wafer. The amount of H was measured by means of nuclear reaction analysis (NRA) using the {sup 1}H({sup 15}N,{alpha}{gamma}){sup 12}C reaction up to a depth of {approx}110 nm into the heterostructures. Interestingly, the H profiles are similar in all the samples analysed, with an increasing H content towards the surface and a negligible H incorporation into the GaN layer (0.24 {+-} 0.08 at%) or at the AlGaN/GaN interface. Therefore, NRA shows that H uptake is not related to the growth process or technique employed and that H contamination may be due to external sources after growth. The eventual correlation between topographical defects on the AlGaN surface and the H concentration are also discussed.

  11. Casting defects and mechanical properties of high pressure die cast Mg-Zn-Al-RE alloys

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Wenlong; Easton, Mark A.; Zhu, Suming; Nie, Jianfeng [CAST Cooperative Research Centre, Department of Materials Engineering Monash University, Melbourne, VIC (Australia); Dargusch, Matthew S. [School of Mechanical and Mining Engineering, University of Queensland, Brisbane, QLD (Australia); Gibson, Mark A. [CSIRO Process Science and Engineering, Melbourne, VIC (Australia); Jia, Shusheng [Key Laboratory of Automobile Materials, Ministry of Education, Department of Materials Science and Engineering Jilin University, Changchun (China)

    2012-02-15

    The die casting defects and tensile properties of high pressure die cast (HPDC) Mg-Zn-Al-RE alloys with various combinations of Zn and Al were studied. The results show that die casting defects in Mg-Zn-Al-RE alloys are affected by the percentage of Zn and Al contents. The hot tearing susceptibility (HTS) of Mg-Zn-Al-RE alloys tends to increase with increasing Zn content up to 6 wt%, while a further increase of Al and/or Zn content reduces the HTS. In tensile tests, the yield strength (YS) is generally improved by increasing Zn or Al content, whereas the tensile strength (TS) and ductility appear to depend largely on the presence of casting defects. Compared with Mg-Zn-Al alloys, the mechanical properties of the Mg-Zn-Al-RE alloy are significantly improved. The Mg-4Zn-4Al-4RE alloy is found to have few casting defects and the optimal tensile properties. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. High Zn/Al ratios enhance dehydrogenation vs hydrogen transfer reactions of Zn-ZSM-5 catalytic systems in methanol conversion to aromatics

    DEFF Research Database (Denmark)

    Pinilla-Herrero, Irene; Borfecchia, Elisa; Holzinger, Julian

    2018-01-01

    suggest that catalytic activity is associated with [Zn(H2O)n(OH)]+ species located in the exchange positions of the materials with little or no contribution of ZnO or metallic Zn. The effect of Zn/Al ratio on their catalytic performance in methanol conversion to aromatics has been investigated. In all...... cases, higher Zn content causes an increase in the yield of aromatics while keeping the production of alkanes low. For similar Zn contents, high densities of Al sites favour the hydrogen transfer reactions and alkane formation whereas in samples with low Al contents, and thus higher Zn/Al ratio...

  13. Growth and characterization of cubic AlGaN/GaN based devices

    Energy Technology Data Exchange (ETDEWEB)

    Potthast, S.

    2006-11-15

    Cubic GaN and AlGaN layers are grown by radio frequency plasma assisted molecular beam epitaxy on freestanding 3C-SiC (001) substrates. Detailed analysis of the substrate quality reveal a direct dependence of the roughness of the 3C-SiC on the dislocation density. Additionally a strong influence of the substrate quality on the quality of cubic GaN layers is found. GaN, AlGaN and AlN buffer layers grown at different temperatures are used to improve the structural properties of the c-GaN buffer. Best values are obtained for AlN buffers deposited at T{sub Subs}=720 C. Furthermore, the growth temperature of the buffer itself is varied. Optimized results are found for T{sub Subs}=720 C grown under a Ga coverage of one monolayer. On top of the GaN buffer, AlGaN films (0high energy electron diffraction as a probe, show a predominant two-dimensional growth mode. With increasing Al mole fraction, a change in the resistivity of the AlGaN layer is observed due to the gettering of oxygen by aluminum and the variation of the oxygen ionization energy as a function of the Al content. Schottky diodes are fabricated on GaN and AlGaN using nickel as contact material. A strong deviation of the current voltage characteristics from thermionic emission theory is found, measuring anormal high leakage current, caused by the presence of oxygen donors near the surface. It is investigated, that thermal annealing in air reduces the reverse current by three orders of magnitude. AlGaN/GaN are used to fabricate heterojunction field effect transistor structures. Analysis of the capacitance-voltage characteristics at T=150 K revealed clear evidence for the existence of a two-dimensional electron gas, and a sheet carrier concentration of about 1.6 x 10{sup 12}cm{sup -2} is

  14. Interface States in AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors

    International Nuclear Information System (INIS)

    Feng Qian; Du Kai; Li Yu-Kun; Shi Peng; Feng Qing

    2013-01-01

    Frequency-dependent capacitance and conductance measurements are performed on AlGaN/GaN high electron mobility transistors (HEMTs) and NbAlO/AlGaN/GaN metal-insulator-semiconductor HEMTs (MISHEMTs) to extract density and time constants of the trap states at NbAlO/AlGaN interface and gate/AlGaN interface with the gate-voltage biased into the accumulation region and that at the AlGaN/GaN interface with the gate-voltage biased into the depletion region in different circuit models. The measurement results indicate that the trap density at NbAlO/AlGaN interface is about one order lower than that at gate/AlGaN interface while the trap density at AlGaN/GaN interface is in the same order, so the NbAlO film can passivate the AlGaN surface effectively, which is consistent with the current collapse results

  15. Simulation of zincblende AlGaN/GaN high electron mobility transistors for normally-off operation

    Science.gov (United States)

    Grady, R.; Bayram, C.

    2017-07-01

    In this work we investigate design parameters enabling normally-off operation of zincblende (ZB-) phase Al X Ga(1-X)N/GaN high electron mobility transistors (HEMTs) via Synopsys Sentaurus Technology Computer Aided Design (TCAD). As ZB-phase III-nitrides are polarization-free, the 2D electron gas (2DEG) channel at the Al X Ga(1-X)N/GaN heterojunction is formed through intentional δ-doping part of the Al X Ga(1-X)N barrier layer. The impact of each of the design parameters (i.e. Al-content and thickness of Al X Ga(1-X)N barrier; δ-doping location (within the Al X Ga(1-X)N barrier), δ-doped Al X Ga(1-X)N layer thickness and its doping amount; gate metal) are studied in detail and design trade-offs are reported. We show that work function of the gate metal impacts normally-off behavior and turn-on voltage considerably. Our results suggest that Al-content of 35% or less in the Al X Ga(1-X)N barrier results in a normally-off behavior whereas Al X Ga(1-X)N barrier thickness is effective in controlling the turn-on voltage. Overall, we provide design guidelines in controlling the normally-on/-off operation, threshold voltage, and 2DEG density in ZB-phase AlGaN/GaN HEMT technology.

  16. Various Recipes of SiNx Passivated AlGaN/GaN High Electron Mobility Transistors in Correlation with Current Slump

    International Nuclear Information System (INIS)

    Ling, Yang; Yue, Hao; Xiao-Hua, Ma; Si, Quan; Gui-Zhou, Hu; Shou-Gao, Jiang; Li-Yuan, Yang

    2009-01-01

    The current slump of different recipes of SiN x passivated AlGaN/GaN high electron mobility transistors (HEMTs) is investigated. The dc and pulsed current-voltage curves of AlGaN/GaN HEMTs using different recipes are analyzed. It is found that passivation leakage has a strong relationship with NH 3 flow in the plasma-enhanced chemical vapor phase deposition process, which has impacted on the current collapse of SiN x passivated devices. We analyze the pulsed I DS – V DS characteristics of different recipes of SiN x passivation devices for different combinations of gate and drain quiescent biases (V GS0 , V DS0 ) of (0, 0), (−6, 0), (−6, 15) and (0, 15)V. The possible mechanisms are the traps in SiN x passivation capturing the electrons and the surface states at the SiN x /AlGaN interface, which can affect the channel of two-dimensional electron gas and cause the current collapse. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  17. AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating

    Science.gov (United States)

    Liu, Xinke; Lu, Youming; Yu, Wenjie; Wu, Jing; He, Jiazhu; Tang, Dan; Liu, Zhihong; Somasuntharam, Pannirselvam; Zhu, Deliang; Liu, Wenjun; Cao, Peijiang; Han, Sun; Chen, Shaojun; Seow Tan, Leng

    2015-01-01

    Effect of a polarized P(VDF-TrFE) ferroelectric polymer gating on AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) was investigated. The P(VDF-TrFE) gating in the source/drain access regions of AlGaN/GaN MOS-HEMTs was positively polarized (i.e., partially positively charged hydrogen were aligned to the AlGaN surface) by an applied electric field, resulting in a shift-down of the conduction band at the AlGaN/GaN interface. This increases the 2-dimensional electron gas (2-DEG) density in the source/drain access region of the AlGaN/GaN heterostructure, and thereby reduces the source/drain series resistance. Detailed material characterization of the P(VDF-TrFE) ferroelectric film was also carried out using the atomic force microscopy (AFM), X-ray Diffraction (XRD), and ferroelectric hysteresis loop measurement. PMID:26364872

  18. Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels

    Science.gov (United States)

    Li, Haoran; Wienecke, Steven; Romanczyk, Brian; Ahmadi, Elaheh; Guidry, Matthew; Zheng, Xun; Keller, Stacia; Mishra, Umesh K.

    2018-02-01

    A GaN/InGaN composite channel design for vertically scaled N-polar high-electron-mobility transistor (HEMT) structures is proposed and demonstrated by metal-organic chemical vapor deposition. In a conventional N-polar HEMT structure, as the channel thickness (tch) decreases, the sheet charge density (ns) decreases, the electric field in the channel increases, and the centroid of the two-dimensional electron gas (2DEG) moves towards the back-barrier/channel interface, resulting in stronger scattering and lower electron mobility (μ). In this study, a thin InGaN layer was introduced in-between the channel and the AlGaN cap to increase the 2DEG density and reduce the electric field in the channel and therefore increase the electron mobility. The dependence of μ on the InGaN thickness (tInGaN) and the indium composition (xIn) was investigated for different channel thicknesses. With optimized tInGaN and xIn, significant improvements in electron mobility were observed. For a 6 nm channel HEMT structure, the electron mobility increased from 606 to 1141 cm2/(V.s) when the 6 nm thick pure GaN channel was replaced by the 4 nm GaN/2 nm In0.1Ga0.9N composite channel.

  19. Performance improvement and better scalability of wet-recessed and wet-oxidized AlGaN/GaN high electron mobility transistors

    Science.gov (United States)

    Takhar, Kuldeep; Meer, Mudassar; Upadhyay, Bhanu B.; Ganguly, Swaroop; Saha, Dipankar

    2017-05-01

    We have demonstrated that a thin layer of Al2O3 grown by wet-oxidation of wet-recessed AlGaN barrier layer in an AlGaN/GaN heterostructure can significantly improve the performance of GaN based high electron mobility transistors (HEMTs). The wet-etching leads to a damage free recession of the gate region and compensates for the decreased gate capacitance and increased gate leakage. The performance improvement is manifested as an increase in the saturation drain current, transconductance, and unity current gain frequency (fT). This is further augmented with a large decrease in the subthreshold current. The performance improvement is primarily ascribed to an increase in the effective velocity in two-dimensional electron gas without sacrificing gate capacitance, which make the wet-recessed gate oxide-HEMTs much more scalable in comparison to their conventional counterpart. The improved scalability leads to an increase in the product of unity current gain frequency and gate length (fT × Lg).

  20. Development of high toughness, high strength aluminide-bonded carbide ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Becher, P.F.; Plucknett, K.P.; Tiegs, T.N. [Oak Ridge National Lab., TN (United States)] [and others

    1997-04-01

    Cemented carbides are widely used in applications where resistance to abrasion and wear are important, particularly in combination with high strength and stiffness. In the present case, ductile aluminides have been used as a binder phase to fabricate dense carbide cermets by either sintering of mixed powders or a melt-infiltration sintering process. The choice of an aluminide binder was based on the exceptional high temperature strength and chemical stability exhibited by these alloys. For example, TiC-based composites with a Ni{sub 3}Al binder phase exhibit improved oxidation resistance, Young`s moduli > 375 GPa, high fracture strengths (> 1 GPa) that are retained to {ge} 900{degrees}C, and fracture toughness values of 10 to 15 MPa{radical}m, identical to that measured in commercial cobalt-bonded WC with the same test method. The thermal diffusivity values at 200{degrees}C for these composites are {approximately} 0.070 to 0.075 cm{sup 2}/s while the thermal expansion coefficients rise with Ni3Al content from {approximately} 8 to {approximately}11 x 10{sup {minus}6}/{degrees}C over the range of 8 to 40 vol. % Ni{sub 3}Al. The oxidation and acidic corrosion resistances are quite promising as well. Finally, these materials also exhibit good electrical conductivity allowing them to be sectioned and shaped by electrical discharge machining (EDM) processes.

  1. Ex-situ activation of magnesium acceptors in InGaN/LED-structures

    Energy Technology Data Exchange (ETDEWEB)

    Kusch, Gunnar; Frentrup, Martin; Stellmach, Joachim; Kolbe, Tim; Wernicke, Tim; Pristovsek, Markus; Kneissl, Michael [Technische Universitaet Berlin, Institut fuer Festkoerperphysik, Hardenbergstr. 36, 10623 Berlin (Germany)

    2011-07-01

    One of the main problems limiting the output power of group-III-nitride compound light emitting diodes (LEDs) and laser diodes (LD) is the p-doping of nitrides with magnesium (Mg). During metal-organic vapor phase epitaxy (MOVPE) growth of (Al)GaN:Mg magnesium acceptors are passivated by hydrogen (H). By thermal annealing under nitrogen atmosphere the Mg-H bond can be cracked, thus activating the Mg acceptor. We have investigated ex-situ Mg-activation of the p-GaN layer and p-AlGaN electron blocking layer (EBL) in LEDs grown by MOVPE. Especially the activation of the AlGaN EBL is crucial. Simulations show, that a high doping level is required for effective electron blocking and a high injection efficiency. Additionally the acceptor activation energy is expected to increase with increasing Al-content, reducing the free hole concentration in the EBL. Electroluminescence spectroscopy (EL) was performed to determine the influence of the activation on the external quantum efficiency of the LED structure. Furthermore we used CV measurements to determine the Mg-acceptor concentration.

  2. High-density plasma etching of III-nitrides: Process development, device applications and damage remediation

    Science.gov (United States)

    Singh, Rajwinder

    Plasma-assisted etching is a key technology for III-nitride device fabrication. The inevitable etch damage resulting from energetic pattern transfer is a challenge that needs to be addressed in order to optimize device performance and reliability. This dissertation focuses on the development of a high-density inductively-coupled plasma (ICP) etch process for III-nitrides, the demonstration of its applicability to practical device fabrication using a custom built ICP reactor, and development of techniques for remediation of etch damage. A chlorine-based standard dry etch process has been developed and utilized in fabrication of a number of electronic and optoelectronic III-nitride devices. Annealing studies carried out at 700°C have yielded the important insight that the annealing time necessary for making good-quality metal contacts to etch processed n-GaN is very short (water, prior to metallization, removes some of the etch damage and is helpful in recovering contact quality. In-situ treatment consisting of a slow ramp-down of rf bias at the end of the etch is found to achieve the same effect as the ex-situ treatment. This insitu technique is significantly advantageous in a large-scale production environment because it eliminates a process step, particularly one involving treatment in hydrochloric acid. ICP equipment customization for scaling up the process to full 2-inch wafer size is described. Results on etching of state of the art 256 x 256 AlGaN focal plane arrays of ultraviolet photodetectors are reported, with excellent etch uniformity over the wafer area.

  3. Inelastic light scattering spectroscopy of semiconductor nitride nanocolumns

    Energy Technology Data Exchange (ETDEWEB)

    Calleja, J.M.; Lazic, S.; Sanchez-Paramo, J. [Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, 28049 Madrid (Spain); Agullo-Rueda, F. [Materials Science Institute of Madrid, CSIC, 28049 Madrid (Spain); Cerutti, L.; Ristic, J.; Fernandez-Garrido, S.; Sanchez-Garcia, M.A.; Grandal, J.; Calleja, E. [ISOM and Departamento de Ingenieria Electronica, ETSIT, Universidad Politecnica de Madrid, Ciudad Universitaria, 28040 Madrid (Spain); Trampert, A.; Jahn, U. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2007-08-15

    A review of inelastic light scattering measurements on group III-nitride nanocolumns grown by molecular beam epitaxy is presented. The nanocolumns are hexagonal, high quality single crystals with diameters in the range of 20 to 100 nm, with no traces of extended defects. GaN nanocolumns grown on bare Si substrates with both (111) and (100) orientation display narrow phonon peaks, indicating the absence of strain inhomogeneities. This opens the possibility of efficient integration of the nanocolumns as optoelectronic devices with the complementary metal oxide semiconductor technology. Measurements of the E{sub 2} phonon frequency on AlGaN nanocolumns indicate a linear dependence of the Al concentration on the Al relative flux, up to 60%. The E{sub 2} peak width increases with Al content due to phonon damping by alloy scattering. Inelastic light scattering measurements in InN nanocolumns display a coupled LO phonon-plasmon mode together with uncoupled phonons. The coupled mode is not observed in a reference compact sample. The origin of the coupled mode is attributed to spontaneous accumulation of electrons at the lateral surfaces of the nanocolumns. The presence of free electrons in the nanocolumns is confirmed by infrared reflectance measurements. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Inelastic light scattering spectroscopy of semiconductor nitride nanocolumns

    International Nuclear Information System (INIS)

    Calleja, J.M.; Lazic, S.; Sanchez-Paramo, J.; Agullo-Rueda, F.; Cerutti, L.; Ristic, J.; Fernandez-Garrido, S.; Sanchez-Garcia, M.A.; Grandal, J.; Calleja, E.; Trampert, A.; Jahn, U.

    2007-01-01

    A review of inelastic light scattering measurements on group III-nitride nanocolumns grown by molecular beam epitaxy is presented. The nanocolumns are hexagonal, high quality single crystals with diameters in the range of 20 to 100 nm, with no traces of extended defects. GaN nanocolumns grown on bare Si substrates with both (111) and (100) orientation display narrow phonon peaks, indicating the absence of strain inhomogeneities. This opens the possibility of efficient integration of the nanocolumns as optoelectronic devices with the complementary metal oxide semiconductor technology. Measurements of the E 2 phonon frequency on AlGaN nanocolumns indicate a linear dependence of the Al concentration on the Al relative flux, up to 60%. The E 2 peak width increases with Al content due to phonon damping by alloy scattering. Inelastic light scattering measurements in InN nanocolumns display a coupled LO phonon-plasmon mode together with uncoupled phonons. The coupled mode is not observed in a reference compact sample. The origin of the coupled mode is attributed to spontaneous accumulation of electrons at the lateral surfaces of the nanocolumns. The presence of free electrons in the nanocolumns is confirmed by infrared reflectance measurements. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Transformation Heat Treatment of Rapidly Quenched Nb3A1 Precursor Monitored in situ by High Energy Synchrotron Diffraction

    CERN Document Server

    Scheuerlein, C; Di Michiel, M; Jin, X; Takeuchi, T; Kikuchi, A; Tsuchiya, K; Nakagawa, K; Nakamoto, T

    2013-01-01

    Nb3Al superconductors are studied for use in high field magnets. Fine grained Nb3Al with nearly stoichiometric Al content is obtained by a Rapid Heating Quenching and Transformation (RHQT) process. We describe a non destructive in situ study of the transformation process step of a RHQ Nb3Al precursor wire with ramp rates of either 120 °C/h or 800 °C/h. High energy synchrotron x-ray diffraction measurements show the transformation from a Nb(Al)SS supersaturated solid solution into Nb3Al. When heating with a ramp rate of 120 °C/h a strong reduction of the Nb(Al)SS (110) diffraction peak component is observed when the temperature exceeds 660 °C. Additional diffraction peaks are detectable in the approximate temperature interval 610 °C - 750 °C and significant Nb3Al growth is observed above 730 °C.

  6. Performance analysis of 20 nm gate-length In0.2Al0.8N/GaN HEMT with Cu-gate having a remarkable high ION/IOFF ratio

    International Nuclear Information System (INIS)

    Bhattacharjee, A.; Lenka, T. R.

    2014-01-01

    We propose a new structure of In x Al 1−x N/GaN high electron mobility transistor (HEMT) with gate length of 20 nm. The threshold voltage of this HEMT is achieved as −0.472 V. In this device the InAlN barrier layer is intentionally n-doped to boost the I ON /I OFF ratio. The InAlN layer acts as donor barrier layer for this HEMT which exhibits an I ON = 10 −4.3 A and a very low I OFF = 10 −14.4 A resulting in an I ON /I OFF ratio of 10 10.1 . We compared our obtained results with the conventional InAlN/GaN HEMT device having undoped barrier and found that the proposed device has almost 10 5 times better I ON /I OFF ratio. Further, the mobility analysis in GaN channel of this proposed HEMT structure along with DC analysis, C–V and conductance characteristics by using small-signal analysis are also presented in this paper. Moreover, the shifts in threshold voltage by DIBL effect and gate leakage current in the proposed HEMT are also discussed. InAlN was chosen as the most preferred barrier layer as a replacement of AlGaN for its excellent thermal conductivity and very good scalability. (semiconductor devices)

  7. Tribological behaviour at high temperature of hard CrAlN coatings doped with Y or Zr

    International Nuclear Information System (INIS)

    Sánchez-López, J.C.; Contreras, A.; Domínguez-Meister, S.; García-Luis, A.; Brizuela, M.

    2014-01-01

    The tribological properties of CrAlN, CrAlYN and CrAlZrN coatings deposited by direct current reactive magnetron sputtering are studied by means of pin-on-disc experiments at room temperature, 300, 500 and 650 °C using alumina balls as counterparts. The influence of the metallic composition (Al, Y and Zr) on the friction, wear properties and oxidation resistance is studied by means of scanning electron microscopy, energy dispersive X-ray analysis and Raman analysis of the contact region after the friction tests. The results obtained allow us to classify the tribological behaviour of the CrAl(Y,Zr)N coatings into three groups according to the nature of the dopant and aluminium content. The sliding wear mechanism is characterized by the formation of an overcoat rich in chromium and aluminium oxides whose particular composition is determined by the initial chemical characteristics of the coating and the testing temperature. The fraction of Cr 2 O 3 becomes more significant as the Al content decreases and the temperature increases. The addition of Y, and particularly Zr, favours the preferential formation of Cr 2 O 3 versus CrO 2 leading to a reduction of friction and wear of the counterpart. Conversely, the tribological behaviour of pure CrAlN coatings is characterized by higher friction but lower film wear rates as a result of higher hardness and major presence of aluminium oxides on the coating surface. - Highlights: • Comparative tribological study at high temperature of CrAlN, CrAlYN and CrAlZrN films • Fraction of Cr 2 O 3 raises as the Al content decreases and the temperature increases. • Zr doping favours lower and steady friction coefficient due to higher Cr 2 O 3 formation. • Sliding wear mechanism becomes predominantly abrasive as the Al content increases. • Excellent tribological performance of CrAlN doped with low Y contents (≈ 2 at.%)

  8. Performance Analysis of GaN Capping Layer Thickness on GaN/AlGaN/GaN High Electron Mobility Transistors.

    Science.gov (United States)

    Sharma, N; Periasamy, C; Chaturvedi, N

    2018-07-01

    In this paper, we present an investigation of the impact of GaN capping layer and AlGaN layer thickness on the two-dimensional (2D)-electron mobility and the carrier concentration which was formed close to the AlGaN/GaN buffer layer for Al0.25Ga0.75N/GaN and GaN/Al0.25Ga0.75N/GaN heterostructures deposited on sapphire substrates. The results of our analysis clearly indicate that expanding the GaN capping layer thickness from 1 nm to 100 nm prompts an increment in the electron concentration at hetero interface. As consequence of which drain current was additionally increments with GaN cap layer thicknesses, and eventually saturates at approximately 1.85 A/mm for capping layer thickness greater than 40 nm. Interestingly, for the same structure, the 2D-electron mobility, decrease monotonically with GaN capping layer thickness, and saturate at approximately 830 cm2/Vs for capping layer thickness greater than 50 nm. A device with a GaN cap layer didn't exhibit gate leakage current. Furthermore, it was observed that the carrier concentration was first decrease 1.03 × 1019/cm3 to 6.65 × 1018/cm3 with AlGaN Layer thickness from 5 to 10 nm and after that it increases with the AlGaN layer thickness from 10 to 30 nm. The same trend was followed for electric field distributions. Electron mobility decreases monotonically with AlGaN layer thickness. Highest electron mobility 1354 cm2/Vs were recorded for the AlGaN layer thickness of 5 nm. Results obtained are in good agreement with published experimental data.

  9. Proton Irradiation-Induced Metal Voids in Gallium Nitride High Electron Mobility Transistors

    Science.gov (United States)

    2015-09-01

    ABBREVIATIONS 2DEG two-dimensional electron gas AlGaN aluminum gallium nitride AlOx aluminum oxide CCD charged coupled device CTE coefficient of...frequency of FETs. Such a device may also be known as a heterojunction field-effect transistor (HFET), modulation-doped field-effect transistor (MODFET...electrons. This charge attracts electrons to the interface, forming the 2DEG channel. The HEMT includes a heterojunction of two semiconducting

  10. Simulation of zincblende AlGaN/GaN high electron mobility transistors for normally-off operation

    International Nuclear Information System (INIS)

    Grady, R; Bayram, C

    2017-01-01

    In this work we investigate design parameters enabling normally-off operation of zincblende (ZB-) phase Al X Ga (1−X) N/GaN high electron mobility transistors (HEMTs) via Synopsys Sentaurus Technology Computer Aided Design (TCAD). As ZB-phase III-nitrides are polarization-free, the 2D electron gas (2DEG) channel at the Al X Ga (1−X) N/GaN heterojunction is formed through intentional δ -doping part of the Al X Ga (1−X) N barrier layer. The impact of each of the design parameters (i.e. Al-content and thickness of Al X Ga (1−X) N barrier; δ -doping location (within the Al X Ga (1−X) N barrier), δ-doped Al X Ga (1−X) N layer thickness and its doping amount; gate metal) are studied in detail and design trade-offs are reported. We show that work function of the gate metal impacts normally-off behavior and turn-on voltage considerably. Our results suggest that Al-content of 35% or less in the Al X Ga (1−X) N barrier results in a normally-off behavior whereas Al X Ga (1−X) N barrier thickness is effective in controlling the turn-on voltage. Overall, we provide design guidelines in controlling the normally-on/-off operation, threshold voltage, and 2DEG density in ZB-phase AlGaN/GaN HEMT technology. (paper)

  11. Determination of silicon and aluminum in silicon carbide nanocrystals by high-resolution continuum source graphite furnace atomic absorption spectrometry.

    Science.gov (United States)

    Dravecz, Gabriella; Bencs, László; Beke, Dávid; Gali, Adam

    2016-01-15

    The determination of Al contaminant and the main component Si in silicon carbide (SiC) nanocrystals with the size-distribution of 1-8nm dispersed in an aqueous solution was developed using high-resolution continuum source graphite furnace atomic absorption spectrometry (HR-CS-GFAAS). The vaporization/atomization processes were investigated in a transversally heated graphite atomizer by evaporating solution samples of Al and Si preserved in various media (HCl, HNO3). For Si, the best results were obtained by applying a mixture of 5µg Pd plus 5µg Mg, whereas for Al, 10µg Mg (each as nitrate solution) was dispensed with the samples, but the results obtained without modifier were found to be better. This way a maximum pyrolysis temperature of 1200°C for Si and 1300°C for Al could be used, and the optimum (compromise) atomization temperature was 2400°C for both analytes. The Si and Al contents of different sized SiC nanocrystals, dispersed in aqueous solutions, were determined against aqueous (external) calibration standards. The correlation coefficients (R values) of the calibrations were found to be 0.9963 for Si and 0.9991 for Al. The upper limit of the linear calibration range was 2mg/l Si and 0.25mg/l Al. The limit of detection was 3µg/l for Si and 0.5µg/l for Al. The characteristic mass (m0) was calculated to be 389pg Si and 6.4pg Al. The Si and Al content in the solution samples were found to be in the range of 1.0-1.7mg/l and 0.1-0.25mg/l, respectively. Copyright © 2015 Elsevier B.V. All rights reserved.

  12. On the AlxGa1-xN/AlyGa1-yN/AlxGa1-xN (x>y) p-electron blocking layer to improve the hole injection for AlGaN based deep ultraviolet light-emitting diodes

    Science.gov (United States)

    Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Li, Luping; Bi, Wengang; Zhang, Zi-Hui

    2018-01-01

    This work proposes the [0001] oriented AlGaN-based deep ultraviolet (DUV) light-emitting diode (LED) possessing a specifically designed p-electron blocking layer (p-EBL) to achieve the high internal quantum efficiency. Both electrons and holes can be efficiently injected into the active region by adopting the Al0.60Ga0.40N/Al0.50Ga0.50N/Al0.60Ga0.40N structured p-EBL, in which a p-Al0.50Ga0.50N layer is embedded into the p-EBL. Moreover, the impact of different thicknesses for the p-Al0.50Ga0.50N insertion layer on the hole and electron injections has also been investigated. Compared with the DUV LED with the bulk p-Al0.60Ga0.40N as the EBL, the proposed LED architectures improve the light output power if the thickness of the p-Al0.50Ga0.50N insertion layer is properly designed.

  13. Ohmic contacts to n+-GaN capped AlGaN/AlN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Wang Liang; Mohammed, Fitih M.; Ofuonye, Benedict; Adesida, Ilesanmi

    2007-01-01

    Investigations of Ti/Al/Mo/Au Ohmic contact formation, premetallization plasma treatment effects, and interfacial reactions for n + -GaN capped AlGaN/AlN/GaN heterostructures are presented. Ti thickness played an important role in determining contact performance. Transmission electron microscopy studies confirmed that thick Ti layer was necessary to fully consume the GaN cap and the top of AlGaN to enable a higher tunneling current flow. A direct correlation of plasma treatment conditions with I-V linearity, current level, and contact performance was established. The plasma-affected region is believed to extend over 20 nm into the AlGaN and GaN

  14. Formation of Si clusters in AlGaN: A study of local structure

    International Nuclear Information System (INIS)

    Somogyi, A.; Martinez-Criado, G.; Homs, A.; Hernandez-Fenollosa, M. A.; Vantelon, D.; Ambacher, O.

    2007-01-01

    In this study, the authors report on the application of synchrotron radiation x-ray microprobe to the study of Si impurities in plasma-induced molecular beam epitaxy grown Al 0.32 Ga 0.68 N. Elemental maps obtained by μ-x-ray fluorescence spectrometry show inhomogeneous distributions of Si, Al, and Ga on the micron scale. X-ray absorption near-edge structure spectra taken at the Si and Al K edges provided information about their local chemical environment and revealed the change of the spectral features as depending on the position compared to the sample surface and on the concentration of Si

  15. Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states

    International Nuclear Information System (INIS)

    Capriotti, M.; Fleury, C.; Oposich, M.; Bethge, O.; Strasser, G.; Pogany, D.; Lagger, P.; Ostermaier, C.

    2015-01-01

    We provide theoretical and simulation analysis of the small signal response of SiO 2 /AlGaN/GaN metal insulator semiconductor (MIS) capacitors from depletion to spill over region, where the AlGaN/SiO 2 interface is accumulated with free electrons. A lumped element model of the gate stack, including the response of traps at the III-N/dielectric interface, is proposed and represented in terms of equivalent parallel capacitance, C p , and conductance, G p . C p -voltage and G p -voltage dependences are modelled taking into account bias dependent AlGaN barrier dynamic resistance R br and the effective channel resistance. In particular, in the spill-over region, the drop of C p with the frequency increase can be explained even without taking into account the response of interface traps, solely by considering the intrinsic response of the gate stack (i.e., no trap effects) and the decrease of R br with the applied forward bias. Furthermore, we show the limitations of the conductance method for the evaluation of the density of interface traps, D it , from the G p /ω vs. angular frequency ω curves. A peak in G p /ω vs. ω occurs even without traps, merely due to the intrinsic frequency response of gate stack. Moreover, the amplitude of the G p /ω vs. ω peak saturates at high D it , which can lead to underestimation of D it . Understanding the complex interplay between the intrinsic gate stack response and the effect of interface traps is relevant for the development of normally on and normally off MIS high electron mobility transistors with stable threshold voltage

  16. Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

    International Nuclear Information System (INIS)

    Ravikiran, L.; Radhakrishnan, K.; Yiding, Lin; Ng, G. I.; Dharmarasu, N.; Agrawal, M.; Arulkumaran, S.; Vicknesh, S.

    2015-01-01

    To improve the confinement of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) heterostructures, AlGaN/GaN/AlGaN double heterojunction HEMT (DH-HEMT) heterostructures were grown using ammonia-MBE on 100-mm Si substrate. Prior to the growth, single heterojunction HEMT (SH-HEMT) and DH-HEMT heterostructures were simulated using Poisson-Schrödinger equations. From simulations, an AlGaN buffer with “Al” mole fraction of 10% in the DH-HEMT was identified to result in both higher 2DEG concentration (∼10 13  cm −2 ) and improved 2DEG confinement in the channel. Hence, this composition was considered for the growth of the buffer in the DH-HEMT heterostructure. Hall measurements showed a room temperature 2DEG mobility of 1510 cm 2 /V.s and a sheet carrier concentration (n s ) of 0.97 × 10 13  cm −2 for the DH-HEMT structure, while they are 1310 cm 2 /V.s and 1.09 × 10 13  cm −2 , respectively, for the SH-HEMT. Capacitance-voltage measurements confirmed the improvement in the confinement of 2DEG in the DH-HEMT heterostructure, which helped in the enhancement of its room temperature mobility. DH-HEMT showed 3 times higher buffer break-down voltage compared to SH-HEMT, while both devices showed almost similar drain current density. Small signal RF measurements on the DH-HEMT showed a unity current-gain cut-off frequency (f T ) and maximum oscillation frequency (f max ) of 22 and 25 GHz, respectively. Thus, overall, DH-HEMT heterostructure was found to be advantageous due to its higher buffer break-down voltages compared to SH-HEMT heterostructure

  17. Design and Implementation of a High-Flux Photoneutron Converter for Analysis of Fast Neutron Radiation Damage on Gallium Nitride Transistors

    Science.gov (United States)

    2017-06-01

    as the polarization and 2DEG control between aluminum gallium nitride (AlGaN) and GaN layers. Third, the physical and electrical properties of...electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures,” Journal of Applied Physics , vol...relationship of the electrical and physical characteristics of the devices with respect to the fast neutron fluence. The damage was also analyzed using

  18. Formulation and catalytic performance of MOF-derived Fe@C/Al composites for high temperature Fischer–Tropsch synthesis

    KAUST Repository

    Oar-Arteta, Lide; Valero-Romero, Marí a José ; Wezendonk, Tim; Kapteijn, Freek; Gascon, Jorge

    2017-01-01

    High productivity towards C-2-C-4 olefins together with high catalyst stability are key for optimum operation in high temperature Fischer-Tropsch synthesis (HT-FTS). Here, we report the fabrication of Fe@C/Al composites that combine both the outstanding catalytic properties of the Fe-BTC MOF-derived Fe catalyst and the excellent mechanical resistance and textural properties provided by the inorganic AlOOH binder. The addition of AlOOH to Fe-BTC followed by pyrolysis in N-2 atmosphere at 500 degrees C results in composites with a large mesoporosity, a high Fe/Fe3O4 ratio, 10-35 nm average Fe crystallite size and coordinatively unsaturated Al3+ sites. In catalytic terms, the addition of AlOOH binder gives rise to enhanced C-2-C-4 selectivity and catalyst mechanical stability in HT-FTS, but at high Al contents the activity decreases. Altogether, the productivity of these Fe@C/Al composites is well above most known Fe catalysts for this process.

  19. Formulation and catalytic performance of MOF-derived Fe@C/Al composites for high temperature Fischer–Tropsch synthesis

    KAUST Repository

    Oar-Arteta, Lide

    2017-11-15

    High productivity towards C-2-C-4 olefins together with high catalyst stability are key for optimum operation in high temperature Fischer-Tropsch synthesis (HT-FTS). Here, we report the fabrication of Fe@C/Al composites that combine both the outstanding catalytic properties of the Fe-BTC MOF-derived Fe catalyst and the excellent mechanical resistance and textural properties provided by the inorganic AlOOH binder. The addition of AlOOH to Fe-BTC followed by pyrolysis in N-2 atmosphere at 500 degrees C results in composites with a large mesoporosity, a high Fe/Fe3O4 ratio, 10-35 nm average Fe crystallite size and coordinatively unsaturated Al3+ sites. In catalytic terms, the addition of AlOOH binder gives rise to enhanced C-2-C-4 selectivity and catalyst mechanical stability in HT-FTS, but at high Al contents the activity decreases. Altogether, the productivity of these Fe@C/Al composites is well above most known Fe catalysts for this process.

  20. Carbon doped GaAs/AlGaAs heterostructures with high mobility two dimensional hole gas

    Energy Technology Data Exchange (ETDEWEB)

    Hirmer, Marika; Bougeard, Dominique; Schuh, Dieter [Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D 93040 Regensburg (Germany); Wegscheider, Werner [Laboratorium fuer Festkoerperphysik, ETH Zuerich, 8093 Zuerich (Switzerland)

    2011-07-01

    Two dimensional hole gases (2DHG) with high carrier mobilities are required for both fundamental research and possible future ultrafast spintronic devices. Here, two different types of GaAs/AlGaAs heterostructures hosting a 2DHG were investigated. The first structure is a GaAs QW embedded in AlGaAs barrier grown by molecular beam epitaxy with carbon-doping only at one side of the quantum well (QW) (single side doped, ssd), while the second structure is similar but with symmetrically arranged doping layers on both sides of the QW (double side doped, dsd). The ssd-structure shows hole mobilities up to 1.2*10{sup 6} cm{sup 2}/Vs which are achieved after illumination. In contrast, the dsd-structure hosts a 2DHG with mobility up to 2.05*10{sup 6} cm{sup 2}/Vs. Here, carrier mobility and carrier density is not affected by illuminating the sample. Both samples showed distinct Shubnikov-de-Haas oscillations and fractional quantum-Hall-plateaus in magnetotransport experiments done at 20mK, indicating the high quality of the material. In addition, the influence of different temperature profiles during growth and the influence of the Al content of the barrier Al{sub x}Ga{sub 1-x}As on carrier concentration and mobility were investigated and are presented here.

  1. Annealing effects on structure and mechanical properties of CoCrFeNiTiAlx high-entropy alloys

    International Nuclear Information System (INIS)

    Zhang, K B; Fu, Z Y; Zhang, J Y; Wang, W M; Lee, S W; Niihara, K

    2011-01-01

    Novel CoCrFeNiTiAl x (x:molar ratio, other elements are equimolar) high-entropy alloys were prepared by vacuum arc melting and these alloys were subsequently annealed at 1000 deg. C for 2 h. The annealing effects on structure and mechanical properties were investigated. Compared with the as-cast alloys, there are many complex intermetallic phases precipitated from the solid solution matrix in the as-annealed alloys with Al content lower than Al 1.0 . Only simple BCC solid solution structure appears in the as-annealed Al 1.5 and Al 2.0 alloys. This kind of alloys exhibit high resistance to anneal softening. Most as-annealed alloys possess even higher Visker hardness than the as-cast ones. The as-annealed Al 0.5 alloys shows the highest compressive strength while the Al 0 alloy exhibits the best ductility, which is about 2.6 GPa and 13%, respectively. The CoCrFeNiTiAl x high-entropy alloys possess integrated high temperature mechanical property as well.

  2. An Empiric Linear Formula between the Internal Tetrahedron Symmetric Stretch Frequency and the Al Content in the Framework of KL Molecular Sieves

    Institute of Scientific and Technical Information of China (English)

    Nong Yue HE; Chun YANG; Jian Xin TANG; Peng Feng XIAO; Hong CHEN

    2003-01-01

    KL molecular sieves with different framework compositions were secondarily synthesized by substituting Si for Al with a solution of (NH4)2SiF6. The internal tetrahedron symmetric stretch frequency, at ν770 cm-1, is linear with the molar fraction of Al (XAl= Al/(Si+Al)) in the framework of KL samples: XAl = -7.309×10-3 (υ770-760) + 0.3242.

  3. Dielectric function and electro-optical properties of (Al,Ga)N/GaN-heterostructures; Dielektrische Funktion und elektrooptische Eigenschaften von (Al,Ga)N/GaN-Heterostrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Buchheim, Carsten

    2010-04-23

    In this work extensive investigations on nitride semiconductors by optical spectroscopy are presented. The ordinary and the extraordinary component of the dielectric function of GaN in the spectral range from 1.2 to 9.8 eV is shown for the first time. It is demonstrated, that the transparent spectral range is clearly influenced by higher energetic critical points of the band structure. The optical selection rules for GaN and AlN are verified considering the actual strain state. The change of the valence band ordering of AlN in comparison to GaN is proven and the crystal field splitting is estimated for AlN. The ordinary dielectric function of AlGaN is determined for different Al contents. The data are used for developing an analytical model, which includes excitonic effects and bowings. It allows the calculation of the dielectric function for arbitrary alloy compositions. (GaN/)AlGaN/GaN heterostructures are investigated by spectroscopic ellipsometry as well as by photoreflectance and electroreflectance. The optical data yields the electric field strengths of the individual layers to determine the density of the two-dimensional carrier gases at the heterointerfaces with high accuracy. The surface potential is calculated from the combination of experiments and Schroedinger-Poisson calculations. Its dependency on the Al content is quantified. For the special case of thick cap layers the coexistence of electron and hole gases in one sample is experimentally proven for the first time. Several interband transitions between quantized states in AlN/GaN superlattices are observed by electroreflectance. The comparison to quantum mechanical calculations demonstrates the influence of strain and electrical fields (quantum confined Stark effect). For both the ratio of the thicknesses of quantum wells and barriers is crucial. From the dielectric function of the superlattices it becomes obvious, that quantum size effects are not only important for the vicinity of the bandgap, but

  4. Surface composite nanostructures of AZ91 magnesium alloy induced by high current pulsed electron beam treatment

    International Nuclear Information System (INIS)

    Li, M.C.; Hao, S.Z.; Wen, H.; Huang, R.F.

    2014-01-01

    High current pulsed electron beam (HCPEB) treatment was conducted on an AZ91 cast magnesium alloy with accelerating voltage 27 kV, energy density 3 J/cm 2 and pulse duration 2.5 μs. The surface microstructure was characterized by optical microscope (OM), X-ray diffraction (XRD), scanning electron microscope (SEM) equipped with energy dispersive spectrometer (EDS), and transmission electron microscope (TEM). The surface corrosion property was tested with electrochemical method in 3.5 wt.% NaCl solution. It is found that after 1 pulse of HCPEB treatment, the initial eutectic α phase and Mg 17 Al 12 particles started to dissolve in the surface modified layer of depth ∼15 μm. When using 15 HCPEB pulses, the Al content in surface layer increased noticeably, and the phase structure was modified as composite nanostructures consisted of nano-grained Mg 3.1 Al 0.9 domains surrounded by network of Mg 17 Al 12 phase. The HCPEB treated samples showed an improved corrosion resistance with cathodic current density decreased by two orders of magnitude as compared to the initial AZ91 alloy.

  5. Controllable electrical properties of metal-doped In2O3 nanowires for high-performance enhancement-mode transistors.

    Science.gov (United States)

    Zou, Xuming; Liu, Xingqiang; Wang, Chunlan; Jiang, Ying; Wang, Yong; Xiao, Xiangheng; Ho, Johnny C; Li, Jinchai; Jiang, Changzhong; Xiong, Qihua; Liao, Lei

    2013-01-22

    In recent years, In(2)O(3) nanowires (NWs) have been widely explored in many technological areas due to their excellent electrical and optical properties; however, most of these devices are based on In(2)O(3) NW field-effect transistors (FETs) operating in the depletion mode, which induces relatively higher power consumption and fancier circuit integration design. Here, n-type enhancement-mode In(2)O(3) NW FETs are successfully fabricated by doping different metal elements (Mg, Al, and Ga) in the NW channels. Importantly, the resulting threshold voltage can be effectively modulated through varying the metal (Mg, Ga, and Al) content in the NWs. A series of scaling effects in the mobility, transconductance, threshold voltage, and source-drain current with respect to the device channel length are also observed. Specifically, a small gate delay time (0.01 ns) and high on-current density (0.9 mA/μm) are obtained at 300 nm channel length. Furthermore, Mg-doped In(2)O(3) NWs are then employed to fabricate NW parallel array FETs with a high saturation current (0.5 mA), on/off ratio (>10(9)), and field-effect mobility (110 cm(2)/V·s), while the subthreshold slope and threshold voltage do not show any significant changes. All of these results indicate the great potency for metal-doped In(2)O(3) NWs used in the low-power, high-performance thin-film transistors.

  6. Developing precipitation hardenable high entropy alloys

    Science.gov (United States)

    Gwalani, Bharat

    High entropy alloys (HEAs) is a concept wherein alloys are constructed with five or more elements mixed in equal proportions; these are also known as multi-principle elements (MPEs) or complex concentrated alloys (CCAs). This PhD thesis dissertation presents research conducted to develop precipitation-hardenable high entropy alloys using a much-studied fcc-based equi-atomic quaternary alloy (CoCrFeNi). Minor additions of aluminium make the alloy amenable for precipitating ordered intermetallic phases in an fcc matrix. Aluminum also affects grain growth kinetics and Hall-Petch hardenability. The use of a combinatorial approach for assessing composition-microstructure-property relationships in high entropy alloys, or more broadly in complex concentrated alloys; using laser deposited compositionally graded AlxCrCuFeNi 2 (0 mechanically processed via conventional techniques. The phase stability and mechanical properties of these alloys have been investigated and will be presented. Additionally, the activation energy for grain growth as a function of Al content in these complex alloys has also been investigated. Change in fcc grain growth kinetic was studied as a function of aluminum; the apparent activation energy for grain growth increases by about three times going from Al0.1CoCrFeNi (3% Al (at%)) to Al0.3CoCrFeNi. (7% Al (at%)). Furthermore, Al addition leads to the precipitation of highly refined ordered L12 (gamma') and B2 precipitates in Al0.3CoCrFeNi. A detailed investigation of precipitation of the ordered phases in Al0.3CoCrFeNi and their thermal stability is done using atom probe tomography (APT), transmission electron microscopy (TEM) and Synchrotron X-ray in situ and ex situ analyses. The alloy strengthened via grain boundary strengthening following the Hall-Petch relationship offers a large increment of strength with small variation in grain size. Tensile strength of the Al0.3CoFeNi is increased by 50% on precipitation fine-scale gamma' precipitates

  7. Gold free contacts to AlGaN/GaN heterostructures

    NARCIS (Netherlands)

    Hajlasz, Marcin

    2018-01-01

    Transistors and diodes based on AlGaN/GaN are suitable candidates for high-voltage and high-speed electronics due to the GaN material properties such as wide bandgap, large breakdown field, high electron saturation velocity and good thermal conductivity. When thin AlGaN layer is grown epitaxially on

  8. Two-dimensional electron and hole gases in GaN/AlGaN heterostructures; Zweidimensionale Elektronen- und Loechergase in GaN/AlGaN-Heterostrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Link, A.

    2004-12-01

    The aim of this PhD thesis is to investigate the electronic properties of electron and hole gases in GaN/AlGaN heterostructures. Particularly, a deeper and broadened understanding of scattering mechanisms and transport properties is in the focus of this work. The main experimental techniques used for this purpose are the study of Shubnikov-de Haas (SdH) effect and Hall measurements at low temperatures. By means of these magnetotransport measurements, a series of GaN/AlGaN heterostructures with different Al content of the AlGaN barrier were investigated. Since the sheet carrier density of the 2DEG in these semiconductor structures is strongly dependent on the Al content (n{sub s}=2 x 10{sup 12}-10{sup 13} cm{sup -2}), the variation of transport parameters was determined as a function of sheet carrier concentration. First, from the temperature dependence of the SdH oscillations the effective transport mass was calculated. A Hall bar structure with an additional gate contact was used as an alternative to tune the carrier density of a 2DEG system independent of varying structural parametes such as Al content. Thus, the scattering mechanisms were investigated in the carrier density region between 3 x 10{sup 12} and 9.5 x 10{sup 12} cm{sup -2}. The transport properties of subband electrons were studied for a 2DEG system with two occupied subbands. (orig.)

  9. High PRF high current switch

    Science.gov (United States)

    Moran, Stuart L.; Hutcherson, R. Kenneth

    1990-03-27

    A triggerable, high voltage, high current, spark gap switch for use in pu power systems. The device comprises a pair of electrodes in a high pressure hydrogen environment that is triggered by introducing an arc between one electrode and a trigger pin. Unusually high repetition rates may be obtained by undervolting the switch, i.e., operating the trigger at voltages much below the self-breakdown voltage of the device.

  10. Growth of GaN-based non- and semipolar heterostructures for high efficiency light emitters

    International Nuclear Information System (INIS)

    Wernicke, Tim

    2010-01-01

    Optoelectronic devices based on GaN and its alloys InGaN and AlGaN are capable of emitting light from the visible to the ultraviolet spectral region. Blue and green lasers have applications in laser projectors, DNA sequencing and spectroscopy. But it is extremely difficult to fabricate green laser diodes. Currently almost all of the light emitting diodes (LEDs) and lasers are grown on GaN crystals that are oriented in the polar (0001) c-plane direction, which provides the most stable growth surface. However the resulting polarization fields on (0001)GaN have detrimental effects on the optical properties of nitride light emitters, e.g. causing significant wavelength shifts and reduced efficiencies in InGaN LEDs. Growth on crystal surfaces with non- and semipolar orientations, e.g. (10 anti 10) m-plane or (11 anti 22), could enable devices with new and improved optical properties. For example, for nonpolar and semipolar LEDs the degree of polarization of the emitted light can be tailored. Furthermore easier to grow devices with green light emission, since the indium incorporation is enhanced for semipolar orientations. In contrast to c-plane GaN there is no polarization field across quantum wells on nonpolar GaN. By reducing the polarization fields an increase in the radiative recombination rate can be expected and would lead to higher LED efficiencies and lower laser thresholds. One of the biggest challenges for the growth of light emitters on non- and semipolar GaN is the choice of a suitable substrate: Heteroepitaxial growth on sapphire or LiAlO 2 allows the deposition of GaN on 2'' diameter wafers and larger. However, these layers show a very high defect density in particular basal plane stacking faults, in comparison to c-plane GaN on sapphire. In order to reduce the defect density we applied successfully epitaxial lateral overgrowth to heteroepitaxial nonpolar a-plane GaN and verified the improvement by spatially and spectrally cathodoluminescence imaging as

  11. Microstructural characterization of thermal barrier coating on Inconel 617 after high temperature oxidation

    Directory of Open Access Journals (Sweden)

    Mohammadreza Daroonparvar

    2013-06-01

    Full Text Available A turbine blade was protected against high temperature corrosion and oxidation by thermal barrier coatings (TBCsusing atmospheric plasma spraying technique (APS on a Ni-based superalloy (Inconel 617. The coatings (NiCr6AlY/ YSZ and NiCr10AlY/YSZ consist of laminar structure with substantial interconnected porosity transferred oxygen from Yittria stabilized Zirconia (YSZ layer toward the bond coat (NiCrAlY. Hence, a thermally grown oxide layer (TGO was formed on the metallic bond coat and internal oxidation of the bond coat occurred during oxidation. The TBC systems were oxidized in a normal electrically heated furnace at 1150 °C for 18, 22, 26, 32 and 40h.Microstructural characterization of coatings demonstrated that the growth of the TGO layer on the nickel alloy with 6wt. % Al is more rapid than TGO with 10wt. % Al. In addition, many micro-cracks were observed at the interface of NiCr6AlY/YSZ. X-ray diffraction analysis (XRD showed the existence of detrimental oxides such as NiCr2O4, NiCrO3 and NiCrO4 in the bond coat containing 6wt. % Al, accompanied by rapid volume expansion causing the destruction of TBC. In contrast, in the bond coat with 10wt. % Al, NiO, Al2O3and Cr2O3 oxides were formed while very low volume expansion occurred. The oxygen could not penetrate into the TGO layer of bond coat with 10 wt. % Al during high temperature oxidation and the detrimental oxides were not extensively formed within the bond coat as more oxygen was needed. The YSZ with higher Al content showed higher oxidation resistance.

  12. Effect of aluminizing of Cr-containing ferritic alloys on the seal strength of a novel high-temperature solid oxide fuel cell sealing glass

    Science.gov (United States)

    Chou, Yeong-Shyung; Stevenson, Jeffry W.; Singh, Prabhakar

    A novel high-temperature alkaline earth silicate sealing glass was developed for solid oxide fuel cell (SOFC) applications. The glass was used to join two metallic coupons of Cr-containing ferritic stainless steel for seal strength evaluation. In previous work, SrCrO 4 was found to form along the glass/steel interface, which led to severe strength degradation. In the present study, aluminization of the steel surface was investigated as a remedy to minimize or prevent the strontium chromate formation. Three different processes for aluminization were evaluated with Crofer22APU stainless steel: pack cementation, vapor-phase deposition, and aerosol spraying. It was found that pack cementation resulted in a rough surface with occasional cracks in the Al-diffused region. Vapor-phase deposition yielded a smoother surface, but the resulting high Al content increased the coefficient of thermal expansion (CTE), resulting in the failure of joined coupons. Aerosol spraying of an Al-containing salt resulted in the formation of a thin aluminum oxide layer without any surface damage. The room temperature seal strength was evaluated in the as-fired state and in environmentally aged conditions. In contrast to earlier results with uncoated Crofer22APU, the aluminized samples showed no strength degradation even for samples aged in air. Interfacial and chemical compatibility was also investigated. The results showed aluminization to be a viable candidate approach to minimize undesirable chromate formation between alkaline earth silicate sealing glass and Cr-containing interconnect alloys for SOFC applications.

  13. Pramana – Journal of Physics | Indian Academy of Sciences

    Indian Academy of Sciences (India)

    Characterization of GaN/AlGaN epitaxial layers grown by metalorganic chemical vapour deposition for high electron mobility transistor applications · Bhubesh Chander Joshi Manish Mathew B C Joshi D Kumar C Dhanavantri · More Details Abstract Fulltext PDF. GaN and AlGaN epitaxial layers are grown by a metalorganic ...

  14. Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells

    KAUST Repository

    Li, Xiaohang; Xie, Hongen; Ponce, Fernando A.; Ryou, Jae-Hyun; Detchprohm, Theeradetch; Dupuis, Russell D.

    2015-01-01

    We demonstrated onset of deep-ultraviolet (DUV) surface stimulated emission (SE) from c-plane AlGaNmultiple-quantum well(MQW)heterostructuresgrown on a sapphire substrate by optical pumping at room temperature. The onset of SE became observable at a

  15. The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN

    Science.gov (United States)

    Chichibu, S. F.; Uedono, A.; Kojima, K.; Ikeda, H.; Fujito, K.; Takashima, S.; Edo, M.; Ueno, K.; Ishibashi, S.

    2018-04-01

    The nonradiative lifetime (τNR) of the near-band-edge emission in various quality GaN samples is compared with the results of positron annihilation measurement, in order to identify the origin and to determine the capture-cross-section of the major intrinsic nonradiative recombination centers (NRCs). The room-temperature τNR of various n-type GaN samples increased with decreasing the concentration of divacancies composed of a Ga vacancy (VGa) and a N vacancy (VN), namely, VGaVN. The τNR value also increased with increasing the diffusion length of positrons, which is almost proportional to the inverse third root of the gross concentration of all point defects. The results indicate that major intrinsic NRC in n-type GaN is VGaVN. From the relationship between its concentration and τNR, its hole capture-cross-section is estimated to be about 7 × 10-14 cm2. Different from the case of 4H-SiC, the major NRCs in p-type and n-type GaN are different: the major NRCs in Mg-doped p-type GaN epilayers are assigned to multiple vacancies containing a VGa and two (or three) VNs, namely, VGa(VN)n (n = 2 or 3). The ion-implanted Mg-doped GaN films are found to contain larger size vacancy complexes such as (VGa)3(VN)3. In analogy with GaN, major NRCs in Al0.6Ga0.4N alloys are assigned to vacancy complexes containing an Al vacancy or a VGa.

  16. Optical and electrical characterization of AlGaN based Schottky photodiodes after annealing at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Ngoepe, PNM, E-mail: phuti.ngoepe@up.ac.za; Meyer, WE; Diale, M; Auret, FD; Schalkwyk, L van

    2014-04-15

    In this study a comparison is made between the optical and electrical properties of Ni/Au and Ni/Ir/Au Schottky photodiodes based on Al{sub 0.35}Ga{sub 0.65}N. The effects of inserting Ir between Ni and Au are of particular interest. The comparison in the properties is done after annealing the photodiodes at different temperatures in an argon gas ambient. The reverse current decreased with annealing temperature up to 400 °C for the Ni/Au Schottky photodiode and up to 500 °C for the Ni/Ir/Au photodiode. The Schottky barrier heights increased with increasing annealing temperature. The responsivity of the Ni/Au photodiode was higher than that of the Ni/Ir/Au photodiode. The transmission of the Ni/Au metal layer improved with increasing annealing temperature up to 500 °C and the best transmission of the Ni/Ir/Au metal layer was after 400 °C annealing.

  17. Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells

    KAUST Repository

    Li, Xiaohang

    2015-12-14

    We demonstrated onset of deep-ultraviolet (DUV) surface stimulated emission (SE) from c-plane AlGaNmultiple-quantum well(MQW)heterostructuresgrown on a sapphire substrate by optical pumping at room temperature. The onset of SE became observable at a pumping power density of 630 kW/cm2. Spectral deconvolution revealed superposition of a linearly amplified spontaneous emission peak at λ ∼ 257.0 nm with a full width at half maximum (FWHM) of ∼12 nm and a superlinearly amplified SE peak at λ ∼ 260 nm with a narrow FWHM of less than 2 nm. In particular, the wavelength of ∼260 nm is the shortest wavelength of surface SE from III-nitride MQWheterostructures to date. Atomic force microscopy and scanning transmission electron microscopy measurements were employed to investigate the material and structural quality of the AlGaNheterostructures, showing smooth surface and sharp layer interfaces. This study offers promising results for AlGaNheterostructuresgrown on sapphire substrates for the development of DUV vertical cavity surface emitting lasers(VCSELs).

  18. Donors, Acceptors, and Traps in AlGaN and AlGaN/GaN Epitaxial Layers

    National Research Council Canada - National Science Library

    Look, David C

    2006-01-01

    .... The present grant, F49620-03-1-0197, has covered the period 1 May 03 - 30 Apr 06. The overall goal has been to understand defects and impurities in GaN, and determine how to reduce them, if possible...

  19. Highly efficient high temperature electrolysis

    DEFF Research Database (Denmark)

    Hauch, Anne; Ebbesen, Sune; Jensen, Søren Højgaard

    2008-01-01

    High temperature electrolysis of water and steam may provide an efficient, cost effective and environmentally friendly production of H-2 Using electricity produced from sustainable, non-fossil energy sources. To achieve cost competitive electrolysis cells that are both high performing i.e. minimum...... internal resistance of the cell, and long-term stable, it is critical to develop electrode materials that are optimal for steam electrolysis. In this article electrolysis cells for electrolysis of water or steam at temperatures above 200 degrees C for production of H-2 are reviewed. High temperature...... electrolysis is favourable from a thermodynamic point of view, because a part of the required energy can be supplied as thermal heat, and the activation barrier is lowered increasing the H-2 production rate. Only two types of cells operating at high temperature (above 200 degrees C) have been described...

  20. High Line

    DEFF Research Database (Denmark)

    Kiib, Hans

    2015-01-01

    At just over 10 meters above street level, the High Line extends three kilometers through three districts of Southwestern Manhattan in New York. It consists of simple steel construction, and previously served as an elevated rail line connection between Penn Station on 34th Street and the many....... The High Line project has been carried out as part of an open conversion strategy. The result is a remarkable urban architectural project, which works as a catalyst for the urban development of Western Manhattan. The greater project includes the restoration and reuse of many old industrial buildings...

  1. Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Ravikiran, L.; Radhakrishnan, K., E-mail: ERADHA@ntu.edu.sg; Yiding, Lin; Ng, G. I. [NOVITAS-Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Dharmarasu, N.; Agrawal, M.; Arulkumaran, S.; Vicknesh, S. [Temasek Laboratories@NTU, Nanyang Technological University, Singapore 637553 (Singapore)

    2015-01-14

    To improve the confinement of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) heterostructures, AlGaN/GaN/AlGaN double heterojunction HEMT (DH-HEMT) heterostructures were grown using ammonia-MBE on 100-mm Si substrate. Prior to the growth, single heterojunction HEMT (SH-HEMT) and DH-HEMT heterostructures were simulated using Poisson-Schrödinger equations. From simulations, an AlGaN buffer with “Al” mole fraction of 10% in the DH-HEMT was identified to result in both higher 2DEG concentration (∼10{sup 13 }cm{sup −2}) and improved 2DEG confinement in the channel. Hence, this composition was considered for the growth of the buffer in the DH-HEMT heterostructure. Hall measurements showed a room temperature 2DEG mobility of 1510 cm{sup 2}/V.s and a sheet carrier concentration (n{sub s}) of 0.97 × 10{sup 13 }cm{sup −2} for the DH-HEMT structure, while they are 1310 cm{sup 2}/V.s and 1.09 × 10{sup 13 }cm{sup −2}, respectively, for the SH-HEMT. Capacitance-voltage measurements confirmed the improvement in the confinement of 2DEG in the DH-HEMT heterostructure, which helped in the enhancement of its room temperature mobility. DH-HEMT showed 3 times higher buffer break-down voltage compared to SH-HEMT, while both devices showed almost similar drain current density. Small signal RF measurements on the DH-HEMT showed a unity current-gain cut-off frequency (f{sub T}) and maximum oscillation frequency (f{sub max}) of 22 and 25 GHz, respectively. Thus, overall, DH-HEMT heterostructure was found to be advantageous due to its higher buffer break-down voltages compared to SH-HEMT heterostructure.

  2. High Class

    Science.gov (United States)

    Waldecker, Mark

    2005-01-01

    Education administrators make buying decisions for furniture based on many factors. Cost, durability, functionality, safety and aesthetics represent just a few. Those issues always will be important, but gaining greater recognition in recent years has been the role furniture plays in creating positive, high-performance learning environments. The…

  3. High Turbulence

    CERN Multimedia

    EuHIT, Collaboration

    2015-01-01

    As a member of the EuHIT (European High-Performance Infrastructures in Turbulence - see here) consortium, CERN is participating in fundamental research on turbulence phenomena. To this end, the Laboratory provides European researchers with a cryogenic research infrastructure (see here), where the first tests have just been performed.

  4. Highly dominating, highly authoritarian personalities.

    Science.gov (United States)

    Altemeyer, Bob

    2004-08-01

    The author considered the small part of the population whose members score highly on both the Social Dominance Orientation scale and the Right-Wing Authoritarianism scale. Studies of these High SDO-High RWAs, culled from samples of nearly 4000 Canadian university students and over 2600 of their parents and reported in the present article, reveal that these dominating authoritarians are among the most prejudiced persons in society. Furthermore, they seem to combine the worst elements of each kind of personality, being power-hungry, unsupportive of equality, manipulative, and amoral, as social dominators are in general, while also being religiously ethnocentric and dogmatic, as right-wing authoritarians tend to be. The author suggested that, although they are small in number, such persons can have considerable impact on society because they are well-positioned to become the leaders of prejudiced right-wing political movements.

  5. High Energy $\

    CERN Multimedia

    2002-01-01

    This experiment is a high statistics exposure of BEBC filled with hydrogen to both @n and &bar.@n beams. The principal physics aims are : \\item a) The study of the production of charmed mesons and baryons using fully constrained events. \\end{enumerate} b) The study of neutral current interactions on the free proton. \\item c) Measurement of the cross-sections for production of exclusive final state N* and @D resonances. \\item d) Studies of hadronic final states in charged and neutral current reactions. \\item e) Measurement of inclusive charged current cross-sections and structure functions. \\end{enumerate}\\\\ \\\\ The neutrino flux is determined by monitoring the flux of muons in the neutrino shield. The Internal Picket Fence and External Muon Identifier of BEBC are essential parts of the experiment. High resolution cameras are used to search for visible decays of short-lived particles.

  6. On the microstructural evolution and phase transformations in a high niobium containing γ-TiAl alloy

    International Nuclear Information System (INIS)

    Zhang Dezhi; Dehm, G.; Clemens, H.

    2000-01-01

    This paper summarizes our recent work on microstructure evolution and phase transformations in a high Nb containing γ-TiAl alloy with a low Al content. The microstructures of a Ti-42Al-8.5Nb-0.5(W,Si,B,Y) alloy (composition in at.%) in the as-cast condition and after various heat treatments have been examined by optical microscopy, scanning electron microscopy and transmission electron microscopy. Analysis of the alloy in the as-cast condition reveals the existence of a very fine lamellar microstructure (the colony grain size is about 40 μm and the lamellar spacing within the colonies is about 65 nm) with B2(β) phase along colony grain boundaries. Additionally, a B2 (β) → ω phase transformation has been observed. The microstructure of the cast alloy shows evidence of the following solidification and transformation pathway: L → L + α → L + α + β → α + β + γ → lamellar (α + γ) + B2 (β) + γ → lamellar (α 2 + γ) + B2 (β)/ω + γ. After annealing for 2 h from 1250 C to 1450 C, which corresponds to heat treatments within the (β + α) and β phase fields as well as different cooling conditions, the colony size does not increase dramatically, and the lamellar spacing keeps fine upon air cooling or furnace cooling (lamellar spacing ∼ 120 nm). Additionally, the microstructure of the as-cast alloy is stable during long time aging at 900 C, and the colony size does not change remarkably during long time annealing at 1150 C. These results indicate that the material has a small tendency to grain growth, which is attributed to the high Nb content as well as complex alloying effects of W, Y, Si, and B. (orig.)

  7. Determination of lattice parameters, strain state and composition in semipolar III-nitrides using high resolution X-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Frentrup, Martin, E-mail: frentrup@physik.tu-berlin.de; Wernicke, Tim; Stellmach, Joachim; Kneissl, Michael [Institute of Solid State Physics, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin (Germany); Hatui, Nirupam; Bhattacharya, Arnab [Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India)

    2013-12-07

    In group-III-nitride heterostructures with semipolar or nonpolar crystal orientation, anisotropic lattice and thermal mismatch with the buffer or substrate lead to a complex distortion of the unit cells, e.g., by shearing of the lattice. This makes an accurate determination of lattice parameters, composition, and strain state under assumption of the hexagonal symmetry impossible. In this work, we present a procedure to accurately determine the lattice constants, strain state, and composition of semipolar heterostructures using high resolution X-ray diffraction. An analysis of the unit cell distortion shows that four independent lattice parameters are sufficient to describe this distortion. Assuming only small deviations from an ideal hexagonal structure, a linear expression for the interplanar distances d{sub hkl} is derived. It is used to determine the lattice parameters from high resolution X-ray diffraction 2ϑ-ω-scans of multiple on- and off-axis reflections via a weighted least-square fit. The strain and composition of ternary alloys are then evaluated by transforming the elastic parameters (using Hooke's law) from the natural crystal-fixed coordinate system to a layer-based system, given by the in-plane directions and the growth direction. We illustrate our procedure taking an example of (112{sup ¯}2) Al{sub κ}Ga{sub 1−κ}N epilayers with Al-contents over the entire composition range. We separately identify the in-plane and out-of-plane strains and discuss origins for the observed anisotropy.

  8. Effects of Different Levels of Boron on Microstructure and Hardness of CoCrFeNiAlxCu0.7Si0.1By High-Entropy Alloy Coatings by Laser Cladding

    Directory of Open Access Journals (Sweden)

    Yizhu He

    2017-01-01

    Full Text Available High-entropy alloys (HEAs are novel solid solution strengthening metallic materials, some of which show attractive mechanical properties. This paper aims to reveal the effect of adding small atomic boron on the interstitial solid solution strengthening ability in the laser cladded CoCrFeNiAlxCu0.7Si0.1By (x = 0.3, x = 2.3, and 0.3 ≤ y ≤ 0.6 HEA coatings. The results show that laser rapid solidification effectively prevents brittle boride precipitation in the designed coatings. The main phase is a simple face-centered cubic (FCC matrix when the Al content is equal to 0.3. On the other hand, the matrix transforms to single bcc solid solution when x increases to 2.3. Increasing boron content improves the microhardness of the coatings, but leads to a high degree of segregation of Cr and Fe in the interdendritic microstructure. Furthermore, it is worth noting that CoCrFeNiAl0.3Cu0.7Si0.1B0.6 coatings with an FCC matrix and a modulated structure on the nanometer scale exhibit an ultrahigh hardness of 502 HV0.5.

  9. High energy

    International Nuclear Information System (INIS)

    Bonner, B.E.; Roberts, J.B. Jr.

    1993-01-01

    We report here on progress made for the period from December 1, 1992 (the date of submission of our latest progress report) to November 30, 1993 for DOE Grant No. DE-FG05-92ER40717. The new results from the SMC experiment have generated a buzz of theoretical activity. Our involvement with the D0 experiment and the upgrade has increased substantially during the past two years so that we now have six people heavily committed and making what can only be described as a large and disproportionate impact on D0 physics output. Some of the new developments made here at Rice in Neural Network and Probability Density Estimation techniques for data analysis promise to have applications both in D0 and beyond. We report a load of new results from our high-p t jet photoproduction experiment. In addition we have been working on KTeV, albeit without having adequate funding for this work. Progress on the theoretical front has been nothing short of amazing, as is reported herein. In a grand lecture tour during this sabbatical year, Paul Stevenson has already reported his breakthroughs at ten institutions, including CERN, Oxford, Cambridge, Rutherford Lab, Imperial College, and Durham University. The group at Rice University has had an exceptionally productive year and we are justifiably proud of the progress which is reported here

  10. Damping behavior of AlxCoCrFeNi high-entropy alloys by a dynamic mechanical analyzer

    International Nuclear Information System (INIS)

    Ma, S.G.; Liaw, P.K.; Gao, M.C.; Qiao, J.W.; Wang, Z.H.; Zhang, Y.

    2014-01-01

    Highlights: • The Al content is related with structural relaxation and damping capability. • Dynamic modulus is insensitive to the frequency especially for storage modulus. • Several internal-friction peaks are observed in the Al-free or Al-lean alloys. • The damping behavior is proposed to be strongly relied on the level of ordering. - Abstract: For the first time, the damping behavior of high-entropy alloys was studied using the dynamic-mechanical analyzer, over a continuous heating temperature from room temperature to 773 K, at a given frequency range from 1 to 16 Hz in model alloys Al x CoCrFeNi (x = 0, 0.25, 0.5, 0.75, and 1). The experimental results reveal that the Al-rich alloys have a much smaller elastic storage-modulus amplitude over the temperature and thus a larger resistance to structural relaxation, while the Al-free and Al-lean alloys exhibit a much higher loss tangent and thus a much higher damping capability. Overall the elastic storage modulus decreases while the loss tangent increases with increasing the temperature, but little dependence was observed for the frequency. Several visible internal-friction peaks were presented in the face-centered cubic alloys, whose positions and heights are independent of the frequency. The damping capability of these alloys can be comparable to or even overwhelm the conventional Fe–Al alloys. The damping behavior above was proposed to be agreeable with the level of ordering (η) of alloys characterized by two proposed parameters (the relative-entropy effect, Ω, and the atomic-size difference, δ)

  11. Growth of GaN-based non- and semipolar heterostructures for high efficiency light emitters; Wachstum von nicht- und semipolaren InAIGaN-Heterostrukturen fuer hocheffiziente Lichtemitter

    Energy Technology Data Exchange (ETDEWEB)

    Wernicke, Tim

    2010-07-01

    Optoelectronic devices based on GaN and its alloys InGaN and AlGaN are capable of emitting light from the visible to the ultraviolet spectral region. Blue and green lasers have applications in laser projectors, DNA sequencing and spectroscopy. But it is extremely difficult to fabricate green laser diodes. Currently almost all of the light emitting diodes (LEDs) and lasers are grown on GaN crystals that are oriented in the polar (0001) c-plane direction, which provides the most stable growth surface. However the resulting polarization fields on (0001)GaN have detrimental effects on the optical properties of nitride light emitters, e.g. causing significant wavelength shifts and reduced efficiencies in InGaN LEDs. Growth on crystal surfaces with non- and semipolar orientations, e.g. (10 anti 10) m-plane or (11 anti 22), could enable devices with new and improved optical properties. For example, for nonpolar and semipolar LEDs the degree of polarization of the emitted light can be tailored. Furthermore easier to grow devices with green light emission, since the indium incorporation is enhanced for semipolar orientations. In contrast to c-plane GaN there is no polarization field across quantum wells on nonpolar GaN. By reducing the polarization fields an increase in the radiative recombination rate can be expected and would lead to higher LED efficiencies and lower laser thresholds. One of the biggest challenges for the growth of light emitters on non- and semipolar GaN is the choice of a suitable substrate: Heteroepitaxial growth on sapphire or LiAlO{sub 2} allows the deposition of GaN on 2'' diameter wafers and larger. However, these layers show a very high defect density in particular basal plane stacking faults, in comparison to c-plane GaN on sapphire. In order to reduce the defect density we applied successfully epitaxial lateral overgrowth to heteroepitaxial nonpolar a-plane GaN and verified the improvement by spatially and spectrally

  12. Slurry Erosion Behavior of AlxCoCrFeNiTi0.5 High-Entropy Alloy Coatings Fabricated by Laser Cladding

    Directory of Open Access Journals (Sweden)

    Jianhua Zhao

    2018-02-01

    Full Text Available High-entropy alloys (HEAs have gained extensive attention due to their excellent properties and the related scientific value in the last decade. In this work, AlxCoCrFeNiTi0.5 HEA coatings (x: molar ratio, x = 1.0, 1.5, 2.0, and 2.5 were fabricated on Q345 steel substrate by laser-cladding process to develop a practical protection technology for fluid machines. The effect of Al content on their phase evolution, microstructure, and slurry erosion performance of the HEA coatings was studied. The AlxCoCrFeNiTi0.5 HEA coatings are composed of simple face-centered cubic (FCC, body-centered cubic (BCC and their mixture phase. Slurry erosion tests were conducted on the HEA coatings with a constant velocity of 10.08 m/s and 16–40 meshs and particles at impingement angles of 15, 30, 45, 60 and 90 degrees. The effect of three parameters, namely impingement angle, sand concentration and erosion time, on the slurry erosion behavior of AlxCoCrFeNiTi0.5 HEA coatings was investigated. Experimental results show AlCoCrFeNiTi0.5 HEA coating follows a ductile erosion mode and a mixed mode (neither ductile nor brittle for Al1.5CoCrFeNiTi0.5 HEA coating, while Al2.0CoCrFeNiTi0.5 and Al2.5CoCrFeNiTi0.5 HEA coatings mainly exhibit brittle erosion mode. AlCoCrFeNiTi0.5 HEA coating has good erosion resistance at all investigated impingement angles due to its high hardness, good plasticity, and low stacking fault energy (SFE.

  13. Point Defect Identification and Management for Sub-300 nm Light Emitting Diodes and Laser Diodes Grown on Bulk AlN Substrates

    Science.gov (United States)

    Bryan, Zachary A.

    defects in the films due to the increase in their formation energies during growth. This method improved the electrical properties of p-type GaN and n-type AlGaN and reduced stress thereby preventing films from cracking. The optical and structural quality of high Al-content AlGaN multiple quantum wells, light emitting diodes (LEDs), and laser diodes (LDs) grown on single crystalline AlN substrates are investigated. The use of bulk AlN substrates enabled the undoubtable distinction between the effect of growth conditions, such as V/III ratio, on the optical quality from the influence of dislocations. At a high V/III ratio and the proper MQW design, a record high IQE of 80% at a carrier density of 1018 cm-3 is achieved at 258 nm. With these structures, true sub-300 nm lasing is realized and distinguished from super luminescence for the first time by the observations of lasing characteristics such as longitudinal cavity modes, 100% polarized emission, and an elliptically shaped far-field pattern. A transverse electric to transverse magnetic polarization crossover at 245 nm is found. Lasing is observed in both asymmetric and symmetric waveguide structures with and without the presence of Si- and Mg-doping in the waveguide layer. The lowest measurable lasing threshold is 50 kW/cm2 and potentially a lower threshold is obtained in a symmetric waveguide structure while the lowest measured lasing wavelength is 237 nm. Gain measurements reveal a net modal gain greater than 100 cm-1 which is the highest reported value for sub-300 nm lasers. Furthermore, a lowest reported FWHM of 0.012 nm is observed indicating the high quality of the laser structure. Finally, electrically injected LED and LD structures are studied showing great potential for the realization of the first sub-300 nm LD.

  14. Characterization of GaN quantum discs embedded in AlxGa1-xN nanocolumns grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Ristic, J.; Calleja, E.; Sanchez-Garcia, M.A.; Ulloa, J.M.; Sanchez-Paramo, J.; Calleja, J.M.; Jahn, U.; Trampert, A.; Ploog, K.H.

    2003-01-01

    GaN quantum discs embedded in AlGaN nanocolumns with outstanding crystal quality and very high luminescence efficiency were grown on Si(111) substrates by plasma-assisted molecular beam epitaxy under highly N-rich conditions. Nanocolumns with diameters in the range of 30-150 nm, with no traces of any extended defects, as confirmed by transmission electron microscopy, were obtained. GaN quantum discs, 2 and 4 nm thick, were grown embedded in AlGaN nanocolumns by switching on and off the Al flux during variable time spans. Strong optical emissions from GaN quantum discs, observed by photoluminescence and cathodoluminescence measurements, reveal quantum confinement effects. While Raman data indicate that the nanocolumns are fully relaxed, the quantum discs appear to be fully strained. These nanostructures have a high potential for application in efficient vertical cavity emitters

  15. GaN Schottky diodes with single-crystal aluminum barriers grown by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Tseng, H. Y.; Yang, W. C.; Lee, P. Y.; Lin, C. W.; Cheng, Kai-Yuan; Hsieh, K. C.; Cheng, K. Y., E-mail: kycheng@ee.nthu.edu.tw [Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Hsu, C.-H. [Division of Scientific Research, National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)

    2016-08-22

    GaN-based Schottky barrier diodes (SBDs) with single-crystal Al barriers grown by plasma-assisted molecular beam epitaxy are fabricated. Examined using in-situ reflection high-energy electron diffractions, ex-situ high-resolution x-ray diffractions, and high-resolution transmission electron microscopy, it is determined that epitaxial Al grows with its [111] axis coincident with the [0001] axis of the GaN substrate without rotation. In fabricated SBDs, a 0.2 V barrier height enhancement and 2 orders of magnitude reduction in leakage current are observed in single crystal Al/GaN SBDs compared to conventional thermal deposited Al/GaN SBDs. The strain induced piezoelectric field is determined to be the major source of the observed device performance enhancements.

  16. High Combustion Research Facility

    Data.gov (United States)

    Federal Laboratory Consortium — At NETL's High-Pressure Combustion Research Facility in Morgantown, WV, researchers can investigate new high-pressure, high-temperature hydrogen turbine combustion...

  17. High-Throughput Screening Across Quaternary Alloy Composition Space: Oxidation of (AlxFeyNi1-x-y)∼0.8Cr∼0.2.

    Science.gov (United States)

    Payne, Matthew A; Miller, James B; Gellman, Andrew J

    2016-09-12

    Composition spread alloy films (CSAFs) are commonly used as libraries for high-throughput screening of composition-property relationships in multicomponent materials science. Because lateral gradients afford two degrees of freedom, an n-component CSAF can, in principle, contain any composition range falling on a continuous two-dimensional surface through an (n - 1)-dimensional composition space. However, depending on the complexity of the CSAF gradients, characterizing and graphically representing this composition range may not be straightforward when n ≥ 4. The standard approach for combinatorial studies performed using quaternary or higher-order CSAFs has been to use fixed stoichiometric ratios of one or more components to force the composition range to fall on some well-defined plane in the composition space. In this work, we explore the synthesis of quaternary Al-Fe-Ni-Cr CSAFs with a rotatable shadow mask CSAF deposition tool, in which none of the component ratios are fixed. On the basis of the unique gradient geometry produced by the tool, we show that the continuous quaternary composition range of the CSAF can be rigorously represented using a set of two-dimensional "pseudoternary" composition diagrams. We then perform a case study of (AlxFeyNi1-x-y)∼0.8Cr∼0.2 oxidation in dry air at 427 °C to demonstrate how such CSAFs can be used to screen an alloy property across a continuous two-dimensional subspace of a quaternary composition space. We identify a continuous boundary through the (AlxFeyNi1-x-y)∼0.8Cr∼0.2 subspace at which the oxygen uptake into the CSAF between 1 and 16 h oxidation time increases abruptly with decreasing Al content. The results are compared to a previous study of the oxidation of AlxFeyNi1-x-y CSAFs in dry air at 427 °C.

  18. Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions

    Science.gov (United States)

    Pandit, Bhishma; Seo, Tae Hoon; Ryu, Beo Deul; Cho, Jaehee

    2016-06-01

    The current transport mechanism of graphene formed on AlxGa1-xN/GaN heterostructures with various Al mole fractions (x = 0.15, 0.20, 0.30, and 0.40) is investigated. The current-voltage measurement from graphene to AlGaN/GaN shows an excellent rectifying property. The extracted Schottky barrier height of the graphene/AlGaN/GaN contacts increases with the Al mole fraction in AlGaN. However, the current transport mechanism deviates from the Schottky-Mott theory owing to the deterioration of AlGaN crystal quality at high Al mole fractions confirmed by reverse leakage current measurement.

  19. Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions

    Directory of Open Access Journals (Sweden)

    Bhishma Pandit

    2016-06-01

    Full Text Available The current transport mechanism of graphene formed on AlxGa1−xN/GaN heterostructures with various Al mole fractions (x = 0.15, 0.20, 0.30, and 0.40 is investigated. The current–voltage measurement from graphene to AlGaN/GaN shows an excellent rectifying property. The extracted Schottky barrier height of the graphene/AlGaN/GaN contacts increases with the Al mole fraction in AlGaN. However, the current transport mechanism deviates from the Schottky-Mott theory owing to the deterioration of AlGaN crystal quality at high Al mole fractions confirmed by reverse leakage current measurement.

  20. Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes

    International Nuclear Information System (INIS)

    Lu, Yu-Hsuan; Pilkuhn, Manfred H.; Fu, Yi-Keng; Chu, Mu-Tao; Huang, Shyh-Jer; Su, Yan-Kuin; Wang, Kang L.

    2014-01-01

    The influence of the AlGaN electron blocking layer (EBL) with graded aluminum composition on electron confinement and hole injection in AlGaN-based ultraviolet light-emitting diodes (LEDs) are investigated. The light output power of LED with graded AlGaN EBL was markedly improved, comparing to LED with conventional EBL. In experimental results, a high increment of 86.7% can be obtained in light output power. Simulation analysis shows that via proper modification of the barrier profile from the last barrier of the active region to EBL, not only the elimination of electron overflow to p-type layer can be achieved but also the hole injection into the active region can be enhanced, compared to a conventional LED structure. The dominant factor to the performance improvement is shown to be the modulation of polarization field by the graded Al composition in EBL

  1. Thermal etching rate of GaN during MOCVD growth interruption in hydrogen and ammonia ambient determined by AlGaN/GaN superlattice structures

    Science.gov (United States)

    Zhang, Feng; Ikeda, Masao; Zhang, Shuming; Liu, Jianping; Tian, Aiqin; Wen, Pengyan; Cheng, Yang; Yang, Hui

    2017-10-01

    Thermal etching effect of GaN during growth interruption in the metalorganic chemical vapor deposition reactor was investigated in this paper. The thermal etching rate was determined by growing a series of AlGaN/GaN superlattice structures with fixed GaN growth temperature at 735 °C and various AlGaN growth temperature changing from 900 °C to 1007 °C. It was observed that the GaN layer was etched off during the growth interruption when the growth temperature ramped up to AlGaN growth temperature. The etching thickness was determined by high resolution X-ray diffractometer and the etching rate was deduced accordingly. An activation energy of 2.53 eV was obtained for the thermal etching process.

  2. Electron beam irradiation effect on GaN HEMT

    International Nuclear Information System (INIS)

    Lou Yinhong; Guo Hongxia; Zhang Keying; Wang Yuanming; Zhang Fengqi

    2011-01-01

    In this work, GaN HEMTs (High Electron Mobility Transistor) were irradiated by 0.8 and 1.2 MeV electron beams, and the irradiation effects were investigated. The results show that the device damage caused by 0.8 MeV electrons is more serious than that by 1.2 MeV electrons. Saturation drain current increase and threshold voltage negative shift are due to trapped positive charge from ionization in the AlGaN layer and N, Ga vacancy from non-ionizing energy loss in the GaN layer. Electron traps and trapped positive charges from non-ionizing in the AlGaN layer act as trap-assisted-tunneling centers that increase the gate leakage current.(authors)

  3. Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Yu-Hsuan; Pilkuhn, Manfred H. [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Fu, Yi-Keng; Chu, Mu-Tao [Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan (China); Huang, Shyh-Jer, E-mail: yksu@mail.ncku.edu.tw, E-mail: totaljer48@gmail.com [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, California 90095 (United States); Su, Yan-Kuin, E-mail: yksu@mail.ncku.edu.tw, E-mail: totaljer48@gmail.com [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Department of Electronic Engineering, Kun-Shan University, Tainan 71003, Taiwan (China); Wang, Kang L. [Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, California 90095 (United States)

    2014-03-21

    The influence of the AlGaN electron blocking layer (EBL) with graded aluminum composition on electron confinement and hole injection in AlGaN-based ultraviolet light-emitting diodes (LEDs) are investigated. The light output power of LED with graded AlGaN EBL was markedly improved, comparing to LED with conventional EBL. In experimental results, a high increment of 86.7% can be obtained in light output power. Simulation analysis shows that via proper modification of the barrier profile from the last barrier of the active region to EBL, not only the elimination of electron overflow to p-type layer can be achieved but also the hole injection into the active region can be enhanced, compared to a conventional LED structure. The dominant factor to the performance improvement is shown to be the modulation of polarization field by the graded Al composition in EBL.

  4. Physical vapor deposition and analysis of copper indium aluminum diselenide thin films for high band gap solar cells

    Science.gov (United States)

    Haimbodi, Moses Warotua

    CuInSe2 films and related alloys have been used to fabricate the highest efficiency thin film solar cells. Alloying CuInSe2 with CuAlSe2 provides a way to engineer the band gap of the resulting films from 1 to 2.7 eV, thereby providing a pathway for improving device performance. In this work, thin films of CuIn1-xAlxSe 2 obtained by multi-source PVD were characterized and investigated for their potential use as high band gap solar cells. The band gap of the films was varied by controlling the [Al]/[Al + In] ratio. Deposition of these films with varying [Cu]/[Al + In] ratios and thickness (1--4 mum) was carried out at substrate temperatures from 350--530°C. CuIn1-xAlxSe2 based solar cells have been fabricated using the structure glass/Mo/CuIn1-xAl xSe2/CdS/ZnO/grid. The effect of varying the band gap on device performance will be discussed. The highest efficiency obtained in this work is 11% using a film with Eg ≈ 1.3 eV. For high Al content, x > 0.3, device-performance decreases mainly due to poor FF similar to that observed in CuIn1-xGaxSe2 devices and is attributed to poor minority carrier collection. For CuIn1-xAlxSe2 films with x = 1, data is analyzed and presented with respect to [Cu]/[Al] and Se to total metal flux ratio, RSe/RM. Phase analysis shows that the resulting films contain different phases that depend on these parameters. Several of these films also contain concentrations of oxygen varying from 12 to 60 at. % as the [Cu]/[Al] ratio decreases. For RSe/R M > 10, a new structure we label as CuxAlySe z was observed. The oxygen content in all of the films obtained under RSe/RM > 10 vary between 1--3 at. %. Based on the Cu-Se, Al-Se, Cu-Al binary and the Cu2Se-Al2Se 3 pseudo-binary phase diagrams, a phenomenological film growth model is presented showing that the film growth kinetics are controlled by the delivery of Se.

  5. High Performance Networks for High Impact Science

    Energy Technology Data Exchange (ETDEWEB)

    Scott, Mary A.; Bair, Raymond A.

    2003-02-13

    This workshop was the first major activity in developing a strategic plan for high-performance networking in the Office of Science. Held August 13 through 15, 2002, it brought together a selection of end users, especially representing the emerging, high-visibility initiatives, and network visionaries to identify opportunities and begin defining the path forward.

  6. Hyperglycemia (High Blood Glucose)

    Medline Plus

    Full Text Available ... Español Hyperglycemia (High Blood Glucose) Hyperglycemia is the technical term for high blood glucose (blood sugar). High ... We Are Research Leaders We Support Your Doctor Student Resources Patient Access to Research Research Resources Practice ...

  7. High Blood Pressure

    Science.gov (United States)

    ... normal blood pressure 140/90 or higher is high blood pressure Between 120 and 139 for the top number, ... prehypertension. Prehypertension means you may end up with high blood pressure, unless you take steps to prevent it. High ...

  8. High Blood Pressure Facts

    Science.gov (United States)

    ... Stroke Heart Disease Cholesterol Salt Million Hearts® WISEWOMAN High Blood Pressure Facts Recommend on Facebook Tweet Share Compartir On ... Top of Page CDC Fact Sheets Related to High Blood Pressure High Blood Pressure Pulmonary Hypertension Heart Disease Signs ...

  9. High Blood Pressure (Hypertension)

    Science.gov (United States)

    ... Print Page Text Size: A A A Listen High Blood Pressure (Hypertension) Nearly 1 in 3 American adults has ... weight. How Will I Know if I Have High Blood Pressure? High blood pressure is a silent problem — you ...

  10. High Throughput Facility

    Data.gov (United States)

    Federal Laboratory Consortium — Argonne?s high throughput facility provides highly automated and parallel approaches to material and materials chemistry development. The facility allows scientists...

  11. High pressure, high current, low inductance, high reliability sealed terminals

    Science.gov (United States)

    Hsu, John S [Oak Ridge, TN; McKeever, John W [Oak Ridge, TN

    2010-03-23

    The invention is a terminal assembly having a casing with at least one delivery tapered-cone conductor and at least one return tapered-cone conductor routed there-through. The delivery and return tapered-cone conductors are electrically isolated from each other and positioned in the annuluses of ordered concentric cones at an off-normal angle. The tapered cone conductor service can be AC phase conductors and DC link conductors. The center core has at least one service conduit of gate signal leads, diagnostic signal wires, and refrigerant tubing routed there-through. A seal material is in direct contact with the casing inner surface, the tapered-cone conductors, and the service conduits thereby hermetically filling the interstitial space in the casing interior core and center core. The assembly provides simultaneous high-current, high-pressure, low-inductance, and high-reliability service.

  12. Space Based Infrared System High (SBIRS High)

    Science.gov (United States)

    2015-12-01

    elements (five SMGTs) for the S2E2 Mobile Ground System. ​ SBIRS Block Buy (GEO 5-6) The GEO 5-6 Tech Refresh (TR) Engineering Change Proposal was...Selected Acquisition Report (SAR) RCS: DD-A&T(Q&A)823-210 Space Based Infrared System High ( SBIRS High) As of FY 2017 President’s Budget Defense...Acquisition Management Information Retrieval (DAMIR) March 23, 2016 11:24:26 UNCLASSIFIED SBIRS High December 2015 SAR March 23, 2016 11:24:26

  13. Methods for improved growth of group III nitride buffer layers

    Science.gov (United States)

    Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

    2014-07-15

    Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

  14. Enhanced UV luminescence from InAlN quantum well structures using two temperature growth

    International Nuclear Information System (INIS)

    Zubialevich, Vitaly Z.; Sadler, Thomas C.; Dinh, Duc V.; Alam, Shahab N.; Li, Haoning; Pampili, Pietro; Parbrook, Peter J.

    2014-01-01

    InAlN/AlGaN multiple quantum wells (MQWs) emitting between 300 and 350 nm have been prepared by metalorganic chemical vapor deposition on planar AlN templates. To obtain strong room temperature luminescence from InAlN QWs a two temperature approach was required. The intensity decayed weakly as the temperature was increased to 300 K, with ratios I PL (300 K)/I PL (T) max up to 70%. This high apparent internal quantum efficiency is attributed to the exceptionally strong carrier localization in this material, which is also manifested by a high Stokes shift (0.52 eV) of the luminescence. Based on these results InAlN is proposed as a robust alternative to AlGaN for ultraviolet emitting devices. - Highlights: • InAlN quantum wells with AlGaN barriers emitting in near UV successfully grown using quasi-2T approach. • 1 nm AlGaN capping of InAlN quantum wells used to avoid In desorption during temperature ramp to barrier growth conditions. • Strong, thermally resilient luminescence obtained as a result of growth optimization. • Promise of InAlN as an alternative active region for UV emitters demonstrated

  15. Bumball: Highly Engaging, Highly Inclusive, and Highly Entertaining

    Science.gov (United States)

    Hall, Amber; Barney, David; Wilkinson, Carol

    2014-01-01

    Physical educators are always looking for new and exciting games and activities in which students can participate. This article describes Bumball, a high-intensity game that provides the opportunity for students to use many common game skills, such as hand-eye coordination, passing to a target, running, playing defense, and getting to an open…

  16. High temperature high vacuum creep testing facilities

    International Nuclear Information System (INIS)

    Matta, M.K.

    1985-01-01

    Creep is the term used to describe time-dependent plastic flow of metals under conditions of constant load or stress at constant high temperature. Creep has an important considerations for materials operating under stresses at high temperatures for long time such as cladding materials, pressure vessels, steam turbines, boilers,...etc. These two creep machines measures the creep of materials and alloys at high temperature under high vacuum at constant stress. By the two chart recorders attached to the system one could register time and temperature versus strain during the test . This report consists of three chapters, chapter I is the introduction, chapter II is the technical description of the creep machines while chapter III discuss some experimental data on the creep behaviour. Of helium implanted stainless steel. 13 fig., 3 tab

  17. Why high energy physics

    International Nuclear Information System (INIS)

    Diddens, A.N.; Van de Walle, R.T.

    1981-01-01

    An argument is presented for high energy physics from the point of view of the practitioners. Three different angles are presented: The cultural consequence and scientific significance of practising high energy physics, the potential application of the results and the discovery of high energy physics, and the technical spin-offs from the techniques and methods used in high energy physics. (C.F.)

  18. Hypertension (High Blood Pressure)

    Science.gov (United States)

    ... Safe Videos for Educators Search English Español Hypertension (High Blood Pressure) KidsHealth / For Teens / Hypertension (High Blood Pressure) What's ... rest temperature diet emotions posture medicines Why Is High Blood Pressure Bad? High blood pressure means a person's heart ...

  19. High-power, high-efficiency FELs

    International Nuclear Information System (INIS)

    Sessler, A.M.

    1989-04-01

    High power, high efficiency FELs require tapering, as the particles loose energy, so as to maintain resonance between the electromagnetic wave and the particles. They also require focusing of the particles (usually done with curved pole faces) and focusing of the electromagnetic wave (i.e. optical guiding). In addition, one must avoid transverse beam instabilities (primarily resistive wall) and longitudinal instabilities (i.e sidebands). 18 refs., 7 figs., 3 tabs

  20. High Temperature, High Power Piezoelectric Composite Transducers

    Science.gov (United States)

    Lee, Hyeong Jae; Zhang, Shujun; Bar-Cohen, Yoseph; Sherrit, StewarT.

    2014-01-01

    Piezoelectric composites are a class of functional materials consisting of piezoelectric active materials and non-piezoelectric passive polymers, mechanically attached together to form different connectivities. These composites have several advantages compared to conventional piezoelectric ceramics and polymers, including improved electromechanical properties, mechanical flexibility and the ability to tailor properties by using several different connectivity patterns. These advantages have led to the improvement of overall transducer performance, such as transducer sensitivity and bandwidth, resulting in rapid implementation of piezoelectric composites in medical imaging ultrasounds and other acoustic transducers. Recently, new piezoelectric composite transducers have been developed with optimized composite components that have improved thermal stability and mechanical quality factors, making them promising candidates for high temperature, high power transducer applications, such as therapeutic ultrasound, high power ultrasonic wirebonding, high temperature non-destructive testing, and downhole energy harvesting. This paper will present recent developments of piezoelectric composite technology for high temperature and high power applications. The concerns and limitations of using piezoelectric composites will also be discussed, and the expected future research directions will be outlined. PMID:25111242

  1. Highly Accreting Quasars at High Redshift

    Directory of Open Access Journals (Sweden)

    Mary L. Martínez-Aldama

    2018-01-01

    Full Text Available We present preliminary results of a spectroscopic analysis for a sample of type 1 highly accreting quasars (L/LEdd ~ 1.0 at high redshift, z ~2–3. The quasars were observed with the OSIRIS spectrograph on the GTC 10.4 m telescope located at the Observatorio del Roque de los Muchachos in La Palma. The highly accreting quasars were identified using the 4D Eigenvector 1 formalism, which is able to organize type 1 quasars over a broad range of redshift and luminosity. The kinematic and physical properties of the broad line region have been derived by fitting the profiles of strong UV emission lines such as Aliiiλ1860, Siiii]λ1892 and Ciii]λ1909. The majority of our sources show strong blueshifts in the high-ionization lines and high Eddington ratios which are related with the productions of outflows. The importance of highly accreting quasars goes beyond a detailed understanding of their physics: their extreme Eddington ratio makes them candidates standard candles for cosmological studies.

  2. Highly Accreting Quasars at High Redshift

    Science.gov (United States)

    Martínez-Aldama, Mary L.; Del Olmo, Ascensión; Marziani, Paola; Sulentic, Jack W.; Negrete, C. Alenka; Dultzin, Deborah; Perea, Jaime; D'Onofrio, Mauro

    2017-12-01

    We present preliminary results of a spectroscopic analysis for a sample of type 1 highly accreting quasars (LLedd>0.2) at high redshift, z 2-3. The quasars were observed with the OSIRIS spectrograph on the GTC 10.4 m telescope located at the Observatorio del Roque de los Muchachos in La Palma. The highly accreting quasars were identified using the 4D Eigenvector 1 formalism, which is able to organize type 1 quasars over a broad range of redshift and luminosity. The kinematic and physical properties of the broad line region have been derived by fitting the profiles of strong UV emission lines such as AlIII, SiIII and CIII. The majority of our sources show strong blueshifts in the high-ionization lines and high Eddington ratios which are related with the productions of outflows. The importance of highly accreting quasars goes beyond a detailed understanding of their physics: their extreme Eddington ratio makes them candidates standard candles for cosmological studies.

  3. Quantification of aluminium in soil of the Solimões Formation, Acre State, Brazil

    Directory of Open Access Journals (Sweden)

    Thiago Andrade Bernini

    2013-12-01

    Full Text Available The variety of soils in the State of Acre is wide and their chemical profiles are still not fully understood. The nature of the material of origin of these soils is indicated by the high aluminium (Al content, commonly associated with high calcium (Ca and magnesium (Mg contents. The study objective was to use different methods to quantify Al in soils from toposequences formed from material of a sedimentary nature originating from the Solimões Formation, in Acre, Brazil. Trenches were opened at three distinct points in the landscape: shoulder, backslope and footslope positions. Soil samples were collected for physical, chemical, mineralogical analyses. The Al content was quantified using different methods. High Al contents were found in most of these horizons, associated with high Ca and Mg levels, representing the predominant cations in the sum of exchangeable bases. The mineralogy indicates that the soils are still in a low weathering phase, with the presence of significant quantities of 2:1 minerals. Similar Al contents were determined by the methods of NaOH titration, xylenol orange spectrometry and inductively coupled plasma optical emission spectrometry. However, no consistent data were obtained by the pyrocatechol violet method. Extraction with KCl overestimated the exchangeable Al content due to its ability to extract the non-exchangeable Al present in the smectite interlayers. It was observed that high Al contents are related to the instability of the hydroxyl-Al smectite interlayers.

  4. Investigation of strain effects on phase diagrams in the ternary nitride alloys (InAlN, AlGaN, InGaN)

    Energy Technology Data Exchange (ETDEWEB)

    Mohamad, Ranim; Chen, Jun; Ruterana, Pierre [CIMAP, UMR 6252, CNRS-ENSICAEN-CEA-UNICAEN, Caen (France); Bere, Antoine [Laboratoire de Physique et de Chimie de l' Environnement, Universite Ouaga I Pr Joseph KI-ZERBO, Ouagadougou (Burkina Faso)

    2017-09-15

    In this work, we used a modified Stillinger-Weber potential and a methodology of free energy calculation based on numerical computation of the configuration partition function of an alloy, to make a comprehensive study of the properties of group-III nitride ternary compounds (In{sub x}Ga{sub 1-x}N; In{sub x}Al{sub 1-x}N; Al{sub x}Ga{sub 1-x}N). The wurtzite structure was used; and the critical temperatures for the random ternary alloys are determined as 2717 K for In{sub x}Al{sub 1-x}N, 1718 K for In{sub x}Ga{sub 1-x}N, and 177 K for Al{sub x}Ga{sub 1-x}N, respectively. Therefore, Al{sub x}Ga{sub 1-x}N has no unstable mixing region at typical growth temperatures around 1100 C. In contrast, In{sub x}Al{sub 1-x}N and In{sub x}Ga{sub 1-x}N exhibit a wide unstable region, which means that being thick layers, their stability as homogeneous alloys is probably limited. In agreement with other reports, it is also pointed out that the critical temperature T{sub c} may be decreased when the layers are grown under strain. Although the compression and extension have the same effect below 1.5% strain, it is shown, for the first time, that when the compressive strain goes beyond, T{sub c} abruptly increases in contrast to the case of tensile strain where it continues to decrease. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. The role of surface roughness on dislocation bending and stress evolution in low mobility AlGaN films during growth

    Science.gov (United States)

    Bardhan, Abheek; Mohan, Nagaboopathy; Chandrasekar, Hareesh; Ghosh, Priyadarshini; Sridhara Rao, D. V.; Raghavan, Srinivasan

    2018-04-01

    The bending and interaction of threading dislocations are essential to reduce their density for applications involving III-nitrides. Bending of dislocation lines also relaxes the compressive growth stress that is essential to prevent cracking on cooling down due to tensile thermal expansion mismatch stress while growing on Si substrates. It is shown in this work that surface roughness plays a key role in dislocation bending. Dislocations only bend and relax compressive stresses when the lines intersect a smooth surface. These films then crack. In rough films, dislocation lines which terminate at the bottom of the valleys remain straight. Compressive stresses are not relaxed and the films are relatively crack-free. The reasons for this difference are discussed in this work along with the implications on simultaneously meeting the requirements of films being smooth, crack free and having low defect density for device applications.

  6. Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

    Science.gov (United States)

    Hu, Hongpo; Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Gui, Chengqun; Liu, Sheng

    2017-03-01

    We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by high-resolution X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM), which revealed that the TD density in UV LED with AlGaN NL was the highest, whereas that in UV LED with sputtered AlN NL was the lowest. The light output power (LOP) of UV LED with AlGaN NL was 18.2% higher than that of UV LED with GaN NL owing to a decrease in the absorption of 375 nm UV light in the AlGaN NL with a larger bandgap. Using a sputtered AlN NL instead of the AlGaN NL, the LOP of UV LED was further enhanced by 11.3%, which is attributed to reduced TD density in InGaN/AlInGaN active region. In the sputtered AlN thickness range of 10-25 nm, the LOP of UV LED with 15-nm-thick sputtered AlN NL was the highest, revealing that optimum thickness of the sputtered AlN NL is around 15 nm.

  7. High assurance SPIRAL

    Science.gov (United States)

    Franchetti, Franz; Sandryhaila, Aliaksei; Johnson, Jeremy R.

    2014-06-01

    In this paper we introduce High Assurance SPIRAL to solve the last mile problem for the synthesis of high assurance implementations of controllers for vehicular systems that are executed in today's and future embedded and high performance embedded system processors. High Assurance SPIRAL is a scalable methodology to translate a high level specification of a high assurance controller into a highly resource-efficient, platform-adapted, verified control software implementation for a given platform in a language like C or C++. High Assurance SPIRAL proves that the implementation is equivalent to the specification written in the control engineer's domain language. Our approach scales to problems involving floating-point calculations and provides highly optimized synthesized code. It is possible to estimate the available headroom to enable assurance/performance trade-offs under real-time constraints, and enables the synthesis of multiple implementation variants to make attacks harder. At the core of High Assurance SPIRAL is the Hybrid Control Operator Language (HCOL) that leverages advanced mathematical constructs expressing the controller specification to provide high quality translation capabilities. Combined with a verified/certified compiler, High Assurance SPIRAL provides a comprehensive complete solution to the efficient synthesis of verifiable high assurance controllers. We demonstrate High Assurance SPIRALs capability by co-synthesizing proofs and implementations for attack detection and sensor spoofing algorithms and deploy the code as ROS nodes on the Landshark unmanned ground vehicle and on a Synthetic Car in a real-time simulator.

  8. High concentration agglomerate dynamics at high temperatures.

    Science.gov (United States)

    Heine, M C; Pratsinis, S E

    2006-11-21

    The dynamics of agglomerate aerosols are investigated at high solids concentrations that are typical in industrial scale manufacture of fine particles (precursor mole fraction larger than 10 mol %). In particular, formation and growth of fumed silica at such concentrations by chemical reaction, coagulation, and sintering is simulated at nonisothermal conditions and compared to limited experimental data and commercial product specifications. Using recent chemical kinetics for silica formation by SiCl4 hydrolysis and neglecting aerosol polydispersity, the evolution of the diameter of primary particles (specific surface area, SSA), hard- and soft-agglomerates, along with agglomerate effective volume fraction (volume occupied by agglomerate) is investigated. Classic Smoluchowski theory is fundamentally limited for description of soft-agglomerate Brownian coagulation at high solids concentrations. In fact, these high concentrations affect little the primary particle diameter (or SSA) but dominate the soft-agglomerate diameter, structure, and volume fraction, leading to gelation consistent with experimental data. This indicates that restructuring and fragmentation should affect product particle characteristics during high-temperature synthesis of nanostructured particles at high concentrations in aerosol flow reactors.

  9. High-frequency, high-intensity photoionization

    Science.gov (United States)

    Reiss, H. R.

    1996-02-01

    Two analytical methods for computing ionization by high-frequency fields are compared. Predicted ionization rates compare well, but energy predictions for the onset of ionization differ radically. The difference is shown to arise from the use of a transformation in one of the methods that alters the zero from which energy is measured. This alteration leads to an apparent energy threshold for ionization that can, especially in the stabilization regime, differ strongly from the laboratory measurement. It is concluded that channel closings in intense-field ionization can occur at high as well as low frequencies. It is also found that the stabilization phenomenon at high frequencies, very prominent for hydrogen, is absent in a short-range potential.

  10. Western Canada: high prices, high activity

    International Nuclear Information System (INIS)

    Savidant, S

    2000-01-01

    The forces responsible for the high drilling and exploration activity in Western Canada (recent high prices, excess pipeline capacity, and the promise of as yet undiscovered natural gas resources) are discussed. Supply and demand signposts, among them weather impacts, political response by governments, the high demand for rigs and services, the intense competition for land, the scarcity of qualified human resources, are reviewed/. The geological potential of Western Canada, the implications of falling average pool sizes, the industry's ability to catch up to increasing declines, are explored. The disappearance of easy large discoveries, rising development costs involved in smaller, more complex hence more expensive pools are assessed and the Canadian equity and capital markets are reviewed. The predicted likely outcome of all the above factors is fewer players, increasing expectation of higher returns, and more discipline among the remaining players

  11. Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress

    International Nuclear Information System (INIS)

    Sun Wei-Wei; Zheng Xue-Feng; Fan Shuang; Wang Chong; Du Ming; Zhang Kai; Mao Wei; Zhang Jin-Cheng; Hao Yue; Chen Wei-Wei; Cao Yan-Rong; Ma Xiao-Hua

    2015-01-01

    The degradation mechanism of enhancement-mode AlGaN/GaN high electron mobility transistors (HEMTs) fabricated by fluorine plasma ion implantation technology is one major concern of HEMT’s reliability. It is observed that the threshold voltage shows a significant negative shift during the typical long-term on-state gate overdrive stress. The degradation does not originate from the presence of as-grown traps in the AlGaN barrier layer or the generated traps during fluorine ion implantation process. By comparing the relationships between the shift of threshold voltage and the cumulative injected electrons under different stress conditions, a good agreement is observed. It provides direct experimental evidence to support the impact ionization physical model, in which the degradation of E-mode HEMTs under gate overdrive stress can be explained by the ionization of fluorine ions in the AlGaN barrier layer by electrons injected from 2DEG channel. Furthermore, our results show that there are few new traps generated in the AlGaN barrier layer during the gate overdrive stress, and the ionized fluorine ions cannot recapture the electrons. (paper)

  12. Direct immobilization and hybridization of DNA on group III nitride semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Xu Xiaobin; Jindal, Vibhu; Shahedipour-Sandvik, Fatemeh; Bergkvist, Magnus [College of Nanoscale Science and Engineering, University at Albany (SUNY), 255 Fuller Road, Albany, NY 12203 (United States); Cady, Nathaniel C. [College of Nanoscale Science and Engineering, University at Albany (SUNY), 255 Fuller Road, Albany, NY 12203 (United States)], E-mail: ncady@uamail.albany.edu

    2009-03-15

    A key concern for group III-nitride high electron mobility transistor (HEMT) biosensors is the anchoring of specific capture molecules onto the gate surface. To this end, a direct immobilization strategy was developed to attach single-stranded DNA (ssDNA) to AlGaN surfaces using simple printing techniques without the need for cross-linking agents or complex surface pre-functionalization procedures. Immobilized DNA molecules were stably attached to the AlGaN surfaces and were able to withstand a range of pH and ionic strength conditions. The biological activity of surface-immobilized probe DNA was also retained, as demonstrated by sequence-specific hybridization experiments. Probe hybridization with target ssDNA could be detected by PicoGreen fluorescent dye labeling with a minimum detection limit of 2 nM. These experiments demonstrate a simple and effective immobilization approach for attaching nucleic acids to AlGaN surfaces which can further be used for the development of HEMT-based DNA biosensors.

  13. Precise thickness control in recess etching of AlGaN/GaN hetero-structure using photocarrier-regulated electrochemical process

    Science.gov (United States)

    Kumazaki, Yusuke; Uemura, Keisuke; Sato, Taketomo; Hashizume, Tamotsu

    2017-05-01

    The photocarrier-regulated electrochemical (PREC) process was developed for fabricating recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) for normally off operation. The PREC process is based on photo-assisted electrochemical etching using low-energy chemical reactions. The fundamental photo-electrochemical measurements on AlGaN/GaN heterostructures revealed that the photo-carriers generated in the top AlGaN layer caused homogeneous etching of AlGaN with a smooth surface, but those generated in the GaN layer underneath caused inhomogeneous etching that roughens the surface. The concept of the PREC process is to supply the photo-carriers generated only in the AlGaN layer by selecting proper conditions on light wavelength and voltage. The phenomenon of self-termination etching has been observed during the PREC process, where the etching depth was controlled by light intensity. The recessed-gate AlGaN/GaN HEMT fabricated with the PREC process showed positive threshold voltage and improvement in transconductance compared to planar-gate AlGaN/GaN HEMTs.

  14. Hyperglycemia (High Blood Glucose)

    Medline Plus

    Full Text Available ... symptoms include the following: High blood glucose High levels of sugar in the urine Frequent urination Increased ... you should check and what your blood glucose levels should be. Checking your blood and then treating ...

  15. Hyperglycemia (High Blood Glucose)

    Medline Plus

    Full Text Available ... and Learning About Prediabetes Type 2 Diabetes Risk Test Lower Your Risk Healthy Eating Overweight Smoking High Blood Pressure Physical Activity High Blood Glucose My Health Advisor Tools ...

  16. Hyperglycemia (High Blood Glucose)

    Medline Plus

    Full Text Available ... Overweight Smoking High Blood Pressure Physical Activity High Blood Glucose My Health Advisor Tools To Know Your Risk Alert Day Diabetes Basics Home Symptoms Diagnosis America's Diabetes Challenge Type 1 Type 2 Facts About Type 2 Enroll ...

  17. Hyperglycemia (High Blood Glucose)

    Medline Plus

    Full Text Available ... Risk Test Lower Your Risk Healthy Eating Overweight Smoking High Blood Pressure Physical Activity High Blood Glucose ... Clinical Practice Guidelines Patient Education Materials Scientific Sessions Journals for Professionals Professional Books Patient Access to Research ...

  18. Hyperglycemia (High Blood Glucose)

    Medline Plus

    Full Text Available ... Risk Test Lower Your Risk Healthy Eating Overweight Smoking High Blood Pressure Physical Activity High Blood Glucose ... Diabetes Meal Plans Create Your Plate Gluten Free Diets Meal Planning for Vegetarian Diets Cook with Heart- ...

  19. Hyperglycemia (High Blood Glucose)

    Medline Plus

    Full Text Available ... Risk Test Lower Your Risk Healthy Eating Overweight Smoking High Blood Pressure Physical Activity High Blood Glucose ... Index Low-Calorie Sweeteners Sugar and Desserts Fitness Exercise & Type 1 Diabetes Get Started Safely Get And ...

  20. Hyperglycemia (High Blood Glucose)

    Medline Plus

    Full Text Available ... Diabetes Risk Test Lower Your Risk Healthy Eating Overweight Smoking High Blood Pressure Physical Activity High Blood ... For Parents & Kids Safe at School Everyday Life Children and Type 2 Diabetes Know Your Rights Employment ...

  1. Hyperglycemia (High Blood Glucose)

    Medline Plus

    Full Text Available ... 2 Diabetes Risk Test Lower Your Risk Healthy Eating Overweight Smoking High Blood Pressure Physical Activity High ... What Can I Drink? Fruit Dairy Food Tips Eating Out Quick Meal Ideas Snacks Nutrient Content Claims ...

  2. Hyperglycemia (High Blood Glucose)

    Medline Plus

    Full Text Available ... Test Lower Your Risk Healthy Eating Overweight Smoking High Blood Pressure Physical Activity High Blood Glucose My Health Advisor Tools To Know Your Risk Alert Day Diabetes Basics Home Symptoms Diagnosis America's Diabetes Challenge Type ...

  3. Hyperglycemia (High Blood Glucose)

    Medline Plus

    Full Text Available ... Know Your Rights Employment Discrimination Health Care Professionals Law Enforcement Driver's License For Lawyers Food & Fitness Home ... symptoms include the following: High blood glucose High levels of sugar in the urine Frequent urination Increased ...

  4. Hyperglycemia (High Blood Glucose)

    Medline Plus

    Full Text Available ... Risk Test Lower Your Risk Healthy Eating Overweight Smoking High Blood Pressure Physical Activity High Blood Glucose ... Day in the Life of Diabetes Famous People Working to Stop Diabetes Common Terms Diabetes Statistics Infographics ...

  5. Hyperglycemia (High Blood Glucose)

    Medline Plus

    Full Text Available ... Your Carbs Count Glycemic Index Low-Calorie Sweeteners Sugar and Desserts Fitness Exercise & Type 1 Diabetes Get ... the technical term for high blood glucose (blood sugar). High blood glucose happens when the body has ...

  6. Hyperglycemia (High Blood Glucose)

    Medline Plus

    Full Text Available ... and Learning About Prediabetes Type 2 Diabetes Risk Test Lower Your Risk Healthy Eating Overweight Smoking High Blood Pressure Physical Activity High Blood Glucose My Health ...

  7. Supersymmetry at high temperatures

    International Nuclear Information System (INIS)

    Das, A.; Kaku, M.

    1978-01-01

    We investigate the properties of Green's functions in a spontaneously broken supersymmetric model at high temperatures. We show that, even at high temperatures, we do not get restoration of supersymmetry, at least in the one-loop approximation

  8. High speed data acquisition

    International Nuclear Information System (INIS)

    Cooper, P.S.

    1997-07-01

    A general introduction to high speed data acquisition system techniques in modern particle physics experiments is given. Examples are drawn from the SELEX(E78 1) high statistics charmed baryon production and decay experiment now taking data at Fermilab

  9. High blood sugar

    Science.gov (United States)

    ... Alternative Names Hyperglycemia - self care; High blood glucose - self care; Diabetes - high blood sugar References American Diabetes Association. Standards of medical care in diabetes - 2017: 4. Lifestyle management and 6. Glycemic targets. Diabetes Care . 2017;40( ...

  10. Hyperglycemia (High Blood Glucose)

    Medline Plus

    Full Text Available ... Diagnosing Diabetes and Learning About Prediabetes Type 2 Diabetes Risk Test Lower Your Risk Healthy Eating Overweight Smoking High Blood Pressure Physical Activity High Blood Glucose My Health Advisor ...

  11. Hyperglycemia (High Blood Glucose)

    Medline Plus

    Full Text Available ... Risk Healthy Eating Overweight Smoking High Blood Pressure Physical Activity High Blood Glucose My Health Advisor Tools To ... Email: Sign Up Thank you for signing up ' + ' '); $('.survey-form').show(); }, success: function (data) { $('#survey-errors').remove(); $('. ...

  12. High blood pressure - children

    Science.gov (United States)

    ... this page: //medlineplus.gov/ency/article/007696.htm High blood pressure - children To use the sharing features on this page, please enable JavaScript. High blood pressure (hypertension) is an increase in the force of ...

  13. Preventing High Blood Pressure

    Science.gov (United States)

    ... Heart Disease Cholesterol Salt Million Hearts® WISEWOMAN Preventing High Blood Pressure: Healthy Living Habits Recommend on Facebook Tweet Share ... meal and snack options can help you avoid high blood pressure and its complications. Be sure to eat plenty ...

  14. High blood pressure - infants

    Science.gov (United States)

    ... this page: //medlineplus.gov/ency/article/007329.htm High blood pressure - infants To use the sharing features on this page, please enable JavaScript. High blood pressure (hypertension) is an increase in the force of ...

  15. High blood pressure medications

    Science.gov (United States)

    ... this page: //medlineplus.gov/ency/article/007484.htm High blood pressure medicines To use the sharing features on this page, please enable JavaScript. Treating high blood pressure will help prevent problems such as heart disease, ...

  16. High speed, High resolution terahertz spectrometers

    International Nuclear Information System (INIS)

    Kim, Youngchan; Yee, Dae Su; Yi, Miwoo; Ahn, Jaewook

    2008-01-01

    A variety of sources and methods have been developed for terahertz spectroscopy during almost two decades. Terahertz time domain spectroscopy (THz TDS)has attracted particular attention as a basic measurement method in the fields of THz science and technology. Recently, asynchronous optical sampling (AOS)THz TDS has been demonstrated, featuring rapid data acquisition and a high spectral resolution. Also, terahertz frequency comb spectroscopy (TFCS)possesses attractive features for high precision terahertz spectroscopy. In this presentation, we report on these two types of terahertz spectrometer. Our high speed, high resolution terahertz spectrometer is demonstrated using two mode locked femtosecond lasers with slightly different repetition frequencies without a mechanical delay stage. The repetition frequencies of the two femtosecond lasers are stabilized by use of two phase locked loops sharing the same reference oscillator. The time resolution of our terahertz spectrometer is measured using the cross correlation method to be 270 fs. AOS THz TDS is presented in Fig. 1, which shows a time domain waveform rapidly acquired on a 10ns time window. The inset shows a zoom into the signal with 100ps time window. The spectrum obtained by the fast Fourier Transformation (FFT)of the time domain waveform has a frequency resolution of 100MHz. The dependence of the signal to noise ratio (SNR)on the measurement time is also investigated

  17. High current and high power superconducting rectifiers

    International Nuclear Information System (INIS)

    Kate, H.H.J. ten; Bunk, P.B.; Klundert, L.J.M. van de; Britton, R.B.

    1981-01-01

    Results on three experimental superconducting rectifiers are reported. Two of them are 1 kA low frequency flux pumps, one thermally and magnetically switched. The third is a low-current high-frequency magnetically switched rectifier which can use the mains directly. (author)

  18. High energy neutron radiography

    International Nuclear Information System (INIS)

    Gavron, A.; Morley, K.; Morris, C.; Seestrom, S.; Ullmann, J.; Yates, G.; Zumbro, J.

    1996-01-01

    High-energy spallation neutron sources are now being considered in the US and elsewhere as a replacement for neutron beams produced by reactors. High-energy and high intensity neutron beams, produced by unmoderated spallation sources, open potential new vistas of neutron radiography. The authors discuss the basic advantages and disadvantages of high-energy neutron radiography, and consider some experimental results obtained at the Weapons Neutron Research (WNR) facility at Los Alamos

  19. High-pressure microbiology

    National Research Council Canada - National Science Library

    Michiels, Chris; Bartlett, Douglas Hoyt; Aertsen, Abram

    2008-01-01

    ... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1. High Hydrostatic Pressure Effects in the Biosphere: from Molecules to Microbiology * Filip Meersman and Karel Heremans . . . . . . . . . . . . 2. Effects...

  20. High resolution, high speed ultrahigh vacuum microscopy

    International Nuclear Information System (INIS)

    Poppa, Helmut

    2004-01-01

    The history and future of transmission electron microscopy (TEM) is discussed as it refers to the eventual development of instruments and techniques applicable to the real time in situ investigation of surface processes with high resolution. To reach this objective, it was necessary to transform conventional high resolution instruments so that an ultrahigh vacuum (UHV) environment at the sample site was created, that access to the sample by various in situ sample modification procedures was provided, and that in situ sample exchanges with other integrated surface analytical systems became possible. Furthermore, high resolution image acquisition systems had to be developed to take advantage of the high speed imaging capabilities of projection imaging microscopes. These changes to conventional electron microscopy and its uses were slowly realized in a few international laboratories over a period of almost 40 years by a relatively small number of researchers crucially interested in advancing the state of the art of electron microscopy and its applications to diverse areas of interest; often concentrating on the nucleation, growth, and properties of thin films on well defined material surfaces. A part of this review is dedicated to the recognition of the major contributions to surface and thin film science by these pioneers. Finally, some of the important current developments in aberration corrected electron optics and eventual adaptations to in situ UHV microscopy are discussed. As a result of all the path breaking developments that have led to today's highly sophisticated UHV-TEM systems, integrated fundamental studies are now possible that combine many traditional surface science approaches. Combined investigations to date have involved in situ and ex situ surface microscopies such as scanning tunneling microscopy/atomic force microscopy, scanning Auger microscopy, and photoemission electron microscopy, and area-integrating techniques such as x-ray photoelectron

  1. Journalism Beyond High School.

    Science.gov (United States)

    Turner, Sally

    2001-01-01

    Discusses the shift from high school journalism to college journalism for students. Describes the role of the high school journalism advisor in that process. Offers checklists for getting to know a college publication. Outlines ways high school journalism teachers can take advantage of journalism resources available at local colleges and…

  2. Evaluating High School IT

    Science.gov (United States)

    Thompson, Brett A.

    2004-01-01

    Since its inception in 1997, Cisco's curriculum has entered thousands of high schools across the U.S. and around the world for two reasons: (1) Cisco has a large portion of the computer networking market, and thus has the resources for and interest in developing high school academies; and (2) high school curriculum development teams recognize the…

  3. Early College High Schools

    Science.gov (United States)

    Dessoff, Alan

    2011-01-01

    For at-risk students who stand little chance of going to college, or even finishing high school, a growing number of districts have found a solution: Give them an early start in college while they still are in high school. The early college high school (ECHS) movement that began with funding from the Bill and Melinda Gates Foundation 10 years ago…

  4. High performance systems

    Energy Technology Data Exchange (ETDEWEB)

    Vigil, M.B. [comp.

    1995-03-01

    This document provides a written compilation of the presentations and viewgraphs from the 1994 Conference on High Speed Computing given at the High Speed Computing Conference, {open_quotes}High Performance Systems,{close_quotes} held at Gleneden Beach, Oregon, on April 18 through 21, 1994.

  5. Progress in efficient doping of high aluminum-containing group III-nitrides

    Science.gov (United States)

    Liang, Y.-H.; Towe, E.

    2018-03-01

    The group III-nitride (InN, GaN, and AlN) class of semiconductors has become one of two that are critical to a number of technologies in modern life—the other being silicon. Light-emitting diodes made from (In,Ga)N, for example, dominate recent innovations in general illumination and signaling. Even though the (In,Ga)N materials system is fairly well established and widely used in advanced devices, challenges continue to impede development of devices that include aluminum-containing nitride films such as (Al,Ga)N. The main difficulty is efficient doping of films with aluminum-rich compositions; the problem is particularly severe for p-type doping, which is essential for Ohmic contacts to bipolar device structures. This review briefly summarizes the fundamental issues related to p-type doping, and then discusses a number of approaches that are being pursued to resolve the doping problem or for circumventing the need for p-type doping. Finally, we discuss an approach to doping under liquid-metal-enabled growth by molecular beam epitaxy. Recent results from a number of groups appear to indicate that p-type doping of nitride films under liquid-metal-enabled growth conditions might offer a solution to the doping problem—at least for materials grown by molecular beam epitaxy.

  6. Photoproduction at high energy and high intensity

    CERN Multimedia

    2002-01-01

    The photon beam used for this programme is tagged and provides a large flux up to very high energies (150-200 GeV). It is also hadron-free, since it is obtained by a two-step conversion method. A spectrometer is designed to exploit this beam and to perform a programme of photoproduction with a high level of sensitivity (5-50 events/picobarn).\\\\ \\\\ Priority will be given to the study of processes exhibiting the point-like behaviour of the photon, especially deep inelastic Compton scattering. The spectrometer has two magnets. Charged tracks are measured by MWPC's located only in field-free regions. Three calorimeters provide a large coverage for identifying and measuring electrons and photons. An iron filter downstream identifies muons. Most of the equipment is existing and recuperated from previous experiments.

  7. Technological Aspects: High Voltage

    International Nuclear Information System (INIS)

    Faircloth, D C

    2013-01-01

    This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered. (author)

  8. Technological Aspects: High Voltage

    CERN Document Server

    Faircloth, D.C.

    2013-12-16

    This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered.

  9. High performance homes

    DEFF Research Database (Denmark)

    Beim, Anne; Vibæk, Kasper Sánchez

    2014-01-01

    Can prefabrication contribute to the development of high performance homes? To answer this question, this chapter defines high performance in more broadly inclusive terms, acknowledging the technical, architectural, social and economic conditions under which energy consumption and production occur....... Consideration of all these factors is a precondition for a truly integrated practice and as this chapter demonstrates, innovative project delivery methods founded on the manufacturing of prefabricated buildings contribute to the production of high performance homes that are cost effective to construct, energy...

  10. High temperature refrigerator

    International Nuclear Information System (INIS)

    Steyert, W.A. Jr.

    1978-01-01

    A high temperature magnetic refrigerator is described which uses a Stirling-like cycle in which rotating magnetic working material is heated in zero field and adiabatically magnetized, cooled in high field, then adiabatically demagnetized. During this cycle the working material is in heat exchange with a pumped fluid which absorbs heat from a low temperature heat source and deposits heat in a high temperature reservoir. The magnetic refrigeration cycle operates at an efficiency 70% of Carnot

  11. High-Risk List

    Science.gov (United States)

    2017-01-01

    economy. The World Bank has said that “corruption creates an unfavorable business environment by undermining the operation efficiency of firms and... Bank Began as ‘Ponzi Scheme,’” 11/27/2012. 64 Independent Joint Anti-Corruption Monitoring and Evaluation Committee, Unfinished Business : The Follow...HIGH RISK AREA 7: Oversight 51 HIGH-RISK AREA 8: Strategy and Planning 55 CONCLUSION HIGH RISK LIST I JANUARY 11, 2017 2 EXECUTIVE SUMMARY

  12. Athletes at High Altitude.

    Science.gov (United States)

    Khodaee, Morteza; Grothe, Heather L; Seyfert, Jonathan H; VanBaak, Karin

    2016-01-01

    Athletes at different skill levels perform strenuous physical activity at high altitude for a variety of reasons. Multiple team and endurance events are held at high altitude and may place athletes at increased risk for developing acute high altitude illness (AHAI). Training at high altitude has been a routine part of preparation for some of the high level athletes for a long time. There is a general belief that altitude training improves athletic performance for competitive and recreational athletes. A review of relevant publications between 1980 and 2015 was completed using PubMed and Google Scholar. Clinical review. Level 3. AHAI is a relatively uncommon and potentially serious condition among travelers to altitudes above 2500 m. The broad term AHAI includes several syndromes such as acute mountain sickness (AMS), high altitude pulmonary edema (HAPE), and high altitude cerebral edema (HACE). Athletes may be at higher risk for developing AHAI due to faster ascent and more vigorous exertion compared with nonathletes. Evidence regarding the effects of altitude training on athletic performance is weak. The natural live high, train low altitude training strategy may provide the best protocol for enhancing endurance performance in elite and subelite athletes. High altitude sports are generally safe for recreational athletes, but they should be aware of their individual risks. Individualized and appropriate acclimatization is an essential component of injury and illness prevention.

  13. High voltage engineering

    CERN Document Server

    Rizk, Farouk AM

    2014-01-01

    Inspired by a new revival of worldwide interest in extra-high-voltage (EHV) and ultra-high-voltage (UHV) transmission, High Voltage Engineering merges the latest research with the extensive experience of the best in the field to deliver a comprehensive treatment of electrical insulation systems for the next generation of utility engineers and electric power professionals. The book offers extensive coverage of the physical basis of high-voltage engineering, from insulation stress and strength to lightning attachment and protection and beyond. Presenting information critical to the design, selec

  14. High enthalpy gas dynamics

    CERN Document Server

    Rathakrishnan, Ethirajan

    2014-01-01

    This is an introductory level textbook which explains the elements of high temperature and high-speed gas dynamics. written in a clear and easy to follow style, the author covers all the latest developments in the field including basic thermodynamic principles, compressible flow regimes and waves propagation in one volume covers theoretical modeling of High Enthalpy Flows, with particular focus on problems in internal and external gas-dynamic flows, of interest in the fields of rockets propulsion and hypersonic aerodynamics High enthalpy gas dynamics is a compulsory course for aerospace engine

  15. High blood cholesterol levels

    Science.gov (United States)

    Cholesterol - high; Lipid disorders; Hyperlipoproteinemia; Hyperlipidemia; Dyslipidemia; Hypercholesterolemia ... There are many types of cholesterol. The ones talked about most are: ... lipoprotein (HDL) cholesterol -- often called "good" cholesterol ...

  16. High voltage systems

    International Nuclear Information System (INIS)

    Martin, M.

    1991-01-01

    Industrial processes usually require electrical power. This power is used to drive motors, to heat materials, or in electrochemical processes. Often the power requirements of a plant require the electric power to be delivered at high voltage. In this paper high voltage is considered any voltage over 600 V. This voltage could be as high as 138,000 V for some very large facilities. The characteristics of this voltage and the enormous amounts of power being transmitted necessitate special safety considerations. Safety must be considered during the four activities associated with a high voltage electrical system. These activities are: Design; Installation; Operation; and Maintenance

  17. AlGaN-based laser diodes for the short-wavelength ultraviolet region

    International Nuclear Information System (INIS)

    Yoshida, Harumasa; Kuwabara, Masakazu; Yamashita, Yoji; Takagi, Yasufumi; Uchiyama, Kazuya; Kan, Hirofumi

    2009-01-01

    We have demonstrated the room-temperature operation of GaN/AlGaN and indium-free AlGaN multiple-quantum-well (MQW) laser diodes under the pulsed-current mode. We have successfully grown low-dislocation-density AlGaN films with AlN mole fractions of 20 and 30% on sapphire substrates using the hetero-facet-controlled epitaxial lateral overgrowth (hetero-FACELO) method. GaN/AlGaN and AlGaN MQW laser diodes have been fabricated on the low-dislocation-density Al 0.2 Ga 0.8 N and Al 0.3 Ga 0.7 N films, respectively. The GaN/AlGaN MQW laser diodes lased at a peak wavelength ranging between 359.6 and 354.4 nm. A threshold current density of 8 kA cm -2 , an output power as high as 80 mW and a differential external quantum efficiency (DEQE) of 17.4% have been achieved. The AlGaN MQW laser diodes lased at a peak wavelength down to 336.0 nm far beyond the GaN band gap. For the GaN/AlGaN MQW laser diodes, the modal gain coefficient and the optical internal loss are estimated to be 4.7±0.6 cm kA -1 and 10.6±2.7 cm -1 , respectively. We have observed that the characteristic temperature T 0 ranges from 132 to 89 K and DEQE shows an almost stable tendency with increase of temperature. A temperature coefficient of 0.049 nm K -1 is also found for the GaN/AlGaN MQW laser diode. The results for the AlGaN-based laser diodes grown on high-quality AlGaN films presented here will be essential for the future development of laser diodes emitting much shorter wavelengths.

  18. Hyperglycemia (High Blood Glucose)

    Medline Plus

    Full Text Available ... around 4:00 a.m. to 5:00 a.m.). What are the Symptoms of Hyperglycemia? The signs and symptoms include the following: High blood glucose High levels of sugar in the urine Frequent urination Increased ...

  19. High energy hadron scattering

    International Nuclear Information System (INIS)

    Johnson, R.C.

    1980-01-01

    High energy and small momentum transfer 2 'yields' 2 hadronic scattering processes are described in the physical framework of particle exchange. Particle production in high energy collisions is considered with emphasis on the features of inclusive reactions though with some remarks on exclusive processes. (U.K.)

  20. Hyperglycemia (High Blood Glucose)

    Medline Plus

    Full Text Available ... A A A Listen En Español Hyperglycemia (High Blood Glucose) Hyperglycemia is the technical term for high ... function (data) { $('#survey-errors').remove(); $('.survey-form .form-group .survey-alert-wrap').remove(); if (data.submitSurveyResponse.success == ' ...

  1. Hyperglycemia (High Blood Glucose)

    Medline Plus

    Full Text Available ... Test Lower Your Risk Healthy Eating Overweight Smoking High Blood Pressure Physical Activity High Blood Glucose My Health Advisor ... Chat Closed engagement en -- Have Type 2 Diabetes? - 2017-03-lwt2d-en.html Have Type 2 Diabetes? ...

  2. Hyperglycemia (High Blood Glucose)

    Medline Plus

    Full Text Available ... Research & Practice Ways to Give Close Are You at Risk? Home Prevention Diagnosing Diabetes and Learning About Prediabetes Type 2 Diabetes Risk Test Lower Your Risk Healthy Eating Overweight Smoking High Blood Pressure Physical Activity High Blood Glucose ...

  3. High-Conflict Divorce.

    Science.gov (United States)

    Johnston, Janet R.

    1994-01-01

    Reviews available research studies of high-conflict divorce and its effects on children. Factors believed to contribute to high-conflict divorce are explored, and a model of their interrelationships is proposed. Dispute resolution, intervention, and prevention programs are discussed, and implications for social policy are outlined. (SLD)

  4. Hyperglycemia (High Blood Glucose)

    Medline Plus

    Full Text Available ... You at Risk? Home Prevention Diagnosing Diabetes and Learning About Prediabetes Type 2 Diabetes Risk Test Lower Your Risk Healthy Eating Overweight Smoking High Blood Pressure Physical Activity High Blood Glucose My Health Advisor Tools To Know Your Risk Alert Day Diabetes Basics ...

  5. High Blood Pressure (Hypertension)

    Science.gov (United States)

    ... other risk factors, like diabetes, you may need treatment. How does high blood pressure affect pregnant women? A few women will get ... HIV, Birth Control Heart Health for Women Pregnancy Menopause More Women's Health ... High Blood Pressure--Medicines to Help You Women and Diabetes Heart ...

  6. Hyperglycemia (High Blood Glucose)

    Medline Plus

    Full Text Available ... Type 2 Diabetes Risk Test Lower Your Risk Healthy Eating Overweight Smoking High Blood Pressure Physical Activity High ... Holiday Meal Planning What Can I Eat? Making Healthy Food Choices Diabetes ... Tips Eating Out Quick Meal Ideas Snacks Nutrient Content Claims ...

  7. The high energy galaxy

    International Nuclear Information System (INIS)

    Cesarsky, C.J.

    1986-08-01

    The galaxy is host to a wide variety of high energy events. I review here recent results on large scale galactic phenomena: cosmic-ray origin and confinement, the connexion to ultra high energy gamma-ray emission from X-ray binaries, gamma ray and synchrotron emission in interstellar space, galactic soft and hard X-ray emission

  8. Highly Skilled Migrants

    DEFF Research Database (Denmark)

    Hvidt, Martin

    2016-01-01

    . It is pointed out that while the system facilitated speedy entry to the job market, the lack of inclusion in the Gulf economies of the migrants, the lack of long-term prospects of residing in the countries and the highly asymmetric power balance between sponsor and migrant, provides few incentives...... for the highly skilled migrants to fully contribute to the Gulf economies....

  9. Hyperglycemia (High Blood Glucose)

    Medline Plus

    Full Text Available ... Risk Healthy Eating Overweight Smoking High Blood Pressure Physical Activity High Blood Glucose My Health Advisor Tools ... Complications DKA (Ketoacidosis) & Ketones Kidney Disease ... than planned or exercised less than planned. You have stress from an illness, such as a cold or flu. You have ...

  10. Fixing High Schools

    Science.gov (United States)

    Perkins-Gough, Deborah

    2005-01-01

    Reports from national education organizations in the US indicate the sorry state of high schools in the country that are accused of failing to adequately prepare their graduates for college or for the workforce, highlighting what is a serious problem in light of the troubled state of the US economy. The need to improve high schools is urgent and…

  11. High coking value pitch

    Science.gov (United States)

    Miller, Douglas J.; Chang, Ching-Feng; Lewis, Irwin C.; Lewis, Richard T.

    2014-06-10

    A high coking value pitch prepared from coal tar distillate and has a low softening point and a high carbon value while containing substantially no quinoline insolubles is disclosed. The pitch can be used as an impregnant or binder for producing carbon and graphite articles.

  12. High Gravity (g) Combustion

    National Research Council Canada - National Science Library

    Zelina, Joseph

    2006-01-01

    .... The Ultra-Compact Combustor (UCC), a novel design based on trapped-vortex combustor (TVC) work that uses high swirl in a circumferential cavity to enhance reaction rates via high cavity g-loading on the order of 3000 g's...

  13. Very high energy colliders

    International Nuclear Information System (INIS)

    Richter, B.

    1986-03-01

    The luminosity and energy requirements are considered for both proton colliders and electron-positron colliders. Some of the basic design equations for high energy linear electron colliders are summarized, as well as design constraints. A few examples are given of parameters for very high energy machines. 4 refs., 6 figs

  14. High-pressure apparatus

    NARCIS (Netherlands)

    Schepdael, van L.J.M.; Bartels, P.V.; Berg, van den R.W.

    1999-01-01

    The invention relates to a high-pressure device (1) having a cylindrical high-pressure vessel (3) and prestressing means in order to exert an axial pressure on the vessel. The vessel (3) can have been formed from a number of layers of composite material, such as glass, carbon or aramide fibers which

  15. High-pressure crystallography

    Science.gov (United States)

    Katrusiak, A.

    2008-01-01

    The history and development of high-pressure crystallography are briefly described and examples of structural transformations in compressed compounds are given. The review is focused on the diamond-anvil cell, celebrating its 50th anniversary this year, the principles of its operation and the impact it has had on high-pressure X-ray diffraction.

  16. Proxmox high availability

    CERN Document Server

    Cheng, Simon MC

    2014-01-01

    If you want to know the secrets of virtualization and how to implement high availability on your services, this is the book for you. For those of you who are already using Proxmox, this book offers you the chance to build a high availability cluster with a distributed filesystem to further protect your system from failure.

  17. High Performance Marine Vessels

    CERN Document Server

    Yun, Liang

    2012-01-01

    High Performance Marine Vessels (HPMVs) range from the Fast Ferries to the latest high speed Navy Craft, including competition power boats and hydroplanes, hydrofoils, hovercraft, catamarans and other multi-hull craft. High Performance Marine Vessels covers the main concepts of HPMVs and discusses historical background, design features, services that have been successful and not so successful, and some sample data of the range of HPMVs to date. Included is a comparison of all HPMVs craft and the differences between them and descriptions of performance (hydrodynamics and aerodynamics). Readers will find a comprehensive overview of the design, development and building of HPMVs. In summary, this book: Focuses on technology at the aero-marine interface Covers the full range of high performance marine vessel concepts Explains the historical development of various HPMVs Discusses ferries, racing and pleasure craft, as well as utility and military missions High Performance Marine Vessels is an ideal book for student...

  18. High altitude illness

    Science.gov (United States)

    Hartman-Ksycińska, Anna; Kluz-Zawadzka, Jolanta; Lewandowski, Bogumił

    High-altitude illness is a result of prolonged high-altitude exposure of unacclimatized individuals. The illness is seen in the form of acute mountain sickness (AMS) which if not treated leads to potentially life-threatening high altitude pulmonary oedema and high-altitude cerebral oedema. Medical problems are caused by hypobaric hypoxia stimulating hypoxia-inducible factor (HIF) release. As a result, the central nervous system, circulation and respiratory system function impairment occurs. The most important factor in AMS treatment is acclimatization, withdrawing further ascent and rest or beginning to descent; oxygen supplementation, and pharmacological intervention, and, if available, a portable hyperbaric chamber. Because of the popularity of high-mountain sports and tourism better education of the population at risk is essential.

  19. Multidimensional high harmonic spectroscopy

    International Nuclear Information System (INIS)

    Bruner, Barry D; Soifer, Hadas; Shafir, Dror; Dudovich, Nirit; Serbinenko, Valeria; Smirnova, Olga

    2015-01-01

    High harmonic generation (HHG) has opened up a new frontier in ultrafast science where attosecond time resolution and Angstrom spatial resolution are accessible in a single measurement. However, reconstructing the dynamics under study is limited by the multiple degrees of freedom involved in strong field interactions. In this paper we describe a new class of measurement schemes for resolving attosecond dynamics, integrating perturbative nonlinear optics with strong-field physics. These approaches serve as a basis for multidimensional high harmonic spectroscopy. Specifically, we show that multidimensional high harmonic spectroscopy can measure tunnel ionization dynamics with high precision, and resolves the interference between multiple ionization channels. In addition, we show how multidimensional HHG can function as a type of lock-in amplifier measurement. Similar to multi-dimensional approaches in nonlinear optical spectroscopy that have resolved correlated femtosecond dynamics, multi-dimensional high harmonic spectroscopy reveals the underlying complex dynamics behind attosecond scale phenomena. (paper)

  20. High current high accuracy IGBT pulse generator

    International Nuclear Information System (INIS)

    Nesterov, V.V.; Donaldson, A.R.

    1995-05-01

    A solid state pulse generator capable of delivering high current triangular or trapezoidal pulses into an inductive load has been developed at SLAC. Energy stored in a capacitor bank of the pulse generator is switched to the load through a pair of insulated gate bipolar transistors (IGBT). The circuit can then recover the remaining energy and transfer it back to the capacitor bank without reversing the capacitor voltage. A third IGBT device is employed to control the initial charge to the capacitor bank, a command charging technique, and to compensate for pulse to pulse power losses. The rack mounted pulse generator contains a 525 μF capacitor bank. It can deliver 500 A at 900V into inductive loads up to 3 mH. The current amplitude and discharge time are controlled to 0.02% accuracy by a precision controller through the SLAC central computer system. This pulse generator drives a series pair of extraction dipoles

  1. High redshift quasars and high metallicities

    Science.gov (United States)

    Ferland, Gary J.

    1997-01-01

    A large-scale code called Cloudy was designed to simulate non-equilibrium plasmas and predict their spectra. The goal was to apply it to studies of galactic and extragalactic emission line objects in order to reliably deduce abundances and luminosities. Quasars are of particular interest because they are the most luminous objects in the universe and the highest redshift objects that can be observed spectroscopically, and their emission lines can reveal the composition of the interstellar medium (ISM) of the universe when it was well under a billion years old. The lines are produced by warm (approximately 10(sup 4)K) gas with moderate to low density (n less than or equal to 10(sup 12) cm(sup -3)). Cloudy has been extended to include approximately 10(sup 4) resonance lines from the 495 possible stages of ionization of the lightest 30 elements, an extension that required several steps. The charge transfer database was expanded to complete the needed reactions between hydrogen and the first four ions and fit all reactions with a common approximation. Radiative recombination rate coefficients were derived for recombination from all closed shells, where this process should dominate. Analytical fits to Opacity Project (OP) and other recent photoionization cross sections were produced. Finally, rescaled OP oscillator strengths were used to compile a complete set of data for 5971 resonance lines. The major discovery has been that high redshift quasars have very high metallicities and there is strong evidence that the quasar phenomenon is associated with the birth of massive elliptical galaxies.

  2. High speed atom source

    International Nuclear Information System (INIS)

    Hoshino, Hitoshi.

    1990-01-01

    In a high speed atom source, since the speed is not identical between ions and electrons, no sufficient neutralizing effect for ionic rays due to the mixing of the ionic rays and the electron rays can be obtained failing to obtain high speed atomic rays at high density. In view of the above, a speed control means is disposed for equalizing the speed of ions forming ionic rays and the speed of electrons forming electron rays. Further, incident angle of the electron rays and/or ionic rays to a magnet or an electrode is made variable. As a result, the relative speed between the ions and the electrons to the processing direction is reduced to zero, in which the probability of association between the ions and the electrons due to the coulomb force is increased to improve the neutralizing efficiency to easily obtain fine and high density high speed electron rays. Further, by varying the incident angle, a track capable of obtaining an ideal mixing depending on the energy of the neutralized ionic rays is formed. Since the high speed electron rays has such high density, they can be irradiated easily to the minute region of the specimen. (N.H.)

  3. High performance germanium MOSFETs

    Energy Technology Data Exchange (ETDEWEB)

    Saraswat, Krishna [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States)]. E-mail: saraswat@stanford.edu; Chui, Chi On [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Krishnamohan, Tejas [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Kim, Donghyun [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Nayfeh, Ammar [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Pethe, Abhijit [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States)

    2006-12-15

    Ge is a very promising material as future channel materials for nanoscale MOSFETs due to its high mobility and thus a higher source injection velocity, which translates into higher drive current and smaller gate delay. However, for Ge to become main-stream, surface passivation and heterogeneous integration of crystalline Ge layers on Si must be achieved. We have demonstrated growth of fully relaxed smooth single crystal Ge layers on Si using a novel multi-step growth and hydrogen anneal process without any graded buffer SiGe layer. Surface passivation of Ge has been achieved with its native oxynitride (GeO {sub x}N {sub y} ) and high-permittivity (high-k) metal oxides of Al, Zr and Hf. High mobility MOSFETs have been demonstrated in bulk Ge with high-k gate dielectrics and metal gates. However, due to their smaller bandgap and higher dielectric constant, most high mobility materials suffer from large band-to-band tunneling (BTBT) leakage currents and worse short channel effects. We present novel, Si and Ge based heterostructure MOSFETs, which can significantly reduce the BTBT leakage currents while retaining high channel mobility, making them suitable for scaling into the sub-15 nm regime. Through full band Monte-Carlo, Poisson-Schrodinger and detailed BTBT simulations we show a dramatic reduction in BTBT and excellent electrostatic control of the channel, while maintaining very high drive currents in these highly scaled heterostructure DGFETs. Heterostructure MOSFETs with varying strained-Ge or SiGe thickness, Si cap thickness and Ge percentage were fabricated on bulk Si and SOI substrates. The ultra-thin ({approx}2 nm) strained-Ge channel heterostructure MOSFETs exhibited >4x mobility enhancements over bulk Si devices and >10x BTBT reduction over surface channel strained SiGe devices.

  4. High performance germanium MOSFETs

    International Nuclear Information System (INIS)

    Saraswat, Krishna; Chui, Chi On; Krishnamohan, Tejas; Kim, Donghyun; Nayfeh, Ammar; Pethe, Abhijit

    2006-01-01

    Ge is a very promising material as future channel materials for nanoscale MOSFETs due to its high mobility and thus a higher source injection velocity, which translates into higher drive current and smaller gate delay. However, for Ge to become main-stream, surface passivation and heterogeneous integration of crystalline Ge layers on Si must be achieved. We have demonstrated growth of fully relaxed smooth single crystal Ge layers on Si using a novel multi-step growth and hydrogen anneal process without any graded buffer SiGe layer. Surface passivation of Ge has been achieved with its native oxynitride (GeO x N y ) and high-permittivity (high-k) metal oxides of Al, Zr and Hf. High mobility MOSFETs have been demonstrated in bulk Ge with high-k gate dielectrics and metal gates. However, due to their smaller bandgap and higher dielectric constant, most high mobility materials suffer from large band-to-band tunneling (BTBT) leakage currents and worse short channel effects. We present novel, Si and Ge based heterostructure MOSFETs, which can significantly reduce the BTBT leakage currents while retaining high channel mobility, making them suitable for scaling into the sub-15 nm regime. Through full band Monte-Carlo, Poisson-Schrodinger and detailed BTBT simulations we show a dramatic reduction in BTBT and excellent electrostatic control of the channel, while maintaining very high drive currents in these highly scaled heterostructure DGFETs. Heterostructure MOSFETs with varying strained-Ge or SiGe thickness, Si cap thickness and Ge percentage were fabricated on bulk Si and SOI substrates. The ultra-thin (∼2 nm) strained-Ge channel heterostructure MOSFETs exhibited >4x mobility enhancements over bulk Si devices and >10x BTBT reduction over surface channel strained SiGe devices

  5. High current ion sources

    International Nuclear Information System (INIS)

    Brown, I.G.

    1989-06-01

    The concept of high current ion source is both relative and evolutionary. Within the domain of one particular kind of ion source technology a current of microamperers might be 'high', while in another area a current of 10 Amperes could 'low'. Even within the domain of a single ion source type, what is considered high current performance today is routinely eclipsed by better performance and higher current output within a short period of time. Within their fields of application, there is a large number of kinds of ion sources that can justifiably be called high current. Thus, as a very limited example only, PIGs, Freemen sources, ECR sources, duoplasmatrons, field emission sources, and a great many more all have their high current variants. High current ion beams of gaseous and metallic species can be generated in a number of different ways. Ion sources of the kind developed at various laboratories around the world for the production of intense neutral beams for controlled fusion experiments are used to form large area proton deuteron beams of may tens of Amperes, and this technology can be used for other applications also. There has been significant progress in recent years in the use of microwave ion sources for high current ion beam generation, and this method is likely to find wide application in various different field application. Finally, high current beams of metal ions can be produced using metal vapor vacuum arc ion source technology. After a brief consideration of high current ion source design concepts, these three particular methods are reviewed in this paper

  6. High flying physics

    International Nuclear Information System (INIS)

    Anon.

    1981-01-01

    Cosmic ray physicists have always had to aim high. In the constant search for interactions produced as close as possible to the immensely high primary particles entering the earth's atmosphere from outer space, they have installed experiments on high mountain peaks and flown detectors aloft in balloons. In these studies, there have been periodic sightings of remarkable configurations of secondary particles. These events, many of which bear exotic names like Centauro, Andromeda, Texas Lone Star, etc., frequently defy explanation in terms of conventional physics ideas and give a glimpse of what may lie beyond the behaviour seen so far under laboratory conditions

  7. High Field Workshop

    Energy Technology Data Exchange (ETDEWEB)

    Anon.

    1984-12-15

    A Workshop was held in Frascati at the end of September under the title 'Generation of High Fields for Particle Acceleration to Very High Energies'. It was organized by the CERN Accelerator School, the European Committee for Future Accelerators (ECFA) and the Italian INFN and was a further stage in the exploratory moves towards new techniques of acceleration. Such techniques might become necessary to respond to the needs of high energy physics some decades from now when the application of conventional techniques will probably have reached their limits.

  8. High voltage test techniques

    CERN Document Server

    Kind, Dieter

    2001-01-01

    The second edition of High Voltage Test Techniques has been completely revised. The present revision takes into account the latest international developments in High Voltage and Measurement technology, making it an essential reference for engineers in the testing field.High Voltage Technology belongs to the traditional area of Electrical Engineering. However, this is not to say that the area has stood still. New insulating materials, computing methods and voltage levels repeatedly pose new problems or open up methods of solution; electromagnetic compatibility (EMC) or components and systems al

  9. High-density lipoprotein cholesterol: How High

    Directory of Open Access Journals (Sweden)

    G Rajagopal

    2012-01-01

    Full Text Available The high-density lipoprotein cholesterol (HDL-C is considered anti-atherogenic good cholesterol. It is involved in reverse transport of lipids. Epidemiological studies have found inverse relationship of HDL-C and coronary heart disease (CHD risk. When grouped according to HDL-C, subjects having HDL-C more than 60 mg/dL had lesser risk of CHD than those having HDL-C of 40-60 mg/dL, who in turn had lesser risk than those who had HDL-C less than 40 mg/dL. No upper limit for beneficial effect of HDL-C on CHD risk has been identified. The goals of treating patients with low HDL-C have not been firmly established. Though many drugs are known to improve HDL-C concentration, statins are proven to improve CHD risk and mortality. Cholesteryl ester transfer protein (CETP is involved in metabolism of HDL-C and its inhibitors are actively being screened for clinical utility. However, final answer is still awaited on CETP-inhibitors.

  10. Hyperglycemia (High Blood Glucose)

    Medline Plus

    Full Text Available ... blood glucose High levels of sugar in the urine Frequent urination Increased thirst Part of managing your ... glucose is above 240 mg/dl, check your urine for ketones. If you have ketones, do not ...

  11. High-Speed Photography

    International Nuclear Information System (INIS)

    Paisley, D.L.; Schelev, M.Y.

    1998-01-01

    The applications of high-speed photography to a diverse set of subjects including inertial confinement fusion, laser surgical procedures, communications, automotive airbags, lightning etc. are briefly discussed. (AIP) copyright 1998 Society of Photo-Optical Instrumentation Engineers

  12. High-tech entrepreneurship

    DEFF Research Database (Denmark)

    Bernasconi, Michel; Harris, Simon; Mønsted, Mette

    High-tech businesses form a crucial part of entrepreneurial activity - in some ways representing very typical examples of entrepreneurship, yet in some ways representing quite different challenges. The uncertainty in innovation and advanced technology makes it difficult to use conventional economic...... focuses on the blend of theory and practice needed to inform advanced entrepreneurship students of the specifics of high-tech start-ups. Key topics covered include: uncertainty and innovation; entrepreneurial finance; marketing technological innovations; and high-tech incubation management.......Edited by a multi-national team, it draws together leading writers and researchers from across Europe, and is therefore a must-read for all those involved in advanced entrepreneurship with specific interests in high-tech start-ups....

  13. High Blood Pressure

    Science.gov (United States)

    ... kidney disease, diabetes, or metabolic syndrome Read less Unhealthy lifestyle habits Unhealthy lifestyle habits can increase the risk of high blood pressure. These habits include: Unhealthy eating patterns, such as eating too much sodium ...

  14. High-power klystrons

    Science.gov (United States)

    Siambis, John G.; True, Richard B.; Symons, R. S.

    1994-05-01

    Novel emerging applications in advanced linear collider accelerators, ionospheric and atmospheric sensing and modification and a wide spectrum of industrial processing applications, have resulted in microwave tube requirements that call for further development of high power klystrons in the range from S-band to X-band. In the present paper we review recent progress in high power klystron development and discuss some of the issues and scaling laws for successful design. We also discuss recent progress in electron guns with potential grading electrodes for high voltage with short and long pulse operation via computer simulations obtained from the code DEMEOS, as well as preliminary experimental results. We present designs for high power beam collectors.

  15. Hyperglycemia (High Blood Glucose)

    Medline Plus

    Full Text Available ... breast cancer and AIDS combined. Your gift today will help us get closer to curing diabetes and ... blood and then treating high blood glucose early will help you avoid problems associated with hyperglycemia. How ...

  16. Hyperglycemia (High Blood Glucose)

    Medline Plus

    Full Text Available ... and Learning About Prediabetes Type 2 Diabetes Risk Test Lower Your Risk Healthy Eating Overweight Smoking High ... excused. 86 million Americans have prediabetes. Take the test. Know where you stand. sticky en -- Chef Ronaldo's ...

  17. High blood pressure - adults

    Science.gov (United States)

    ... pressure is found. This is called essential hypertension. High blood pressure that is caused by another medical condition or medicine you are taking is called secondary hypertension. Secondary hypertension may be due to: Chronic ...

  18. High potassium level

    Science.gov (United States)

    ... level is very high, or if you have danger signs, such as changes in an ECG . Emergency ... Seifter JL. Potassium disorders. In: Goldman L, Schafer AI, eds. Goldman-Cecil Medicine . 25th ed. Philadelphia, PA: ...

  19. Responsive design high performance

    CERN Document Server

    Els, Dewald

    2015-01-01

    This book is ideal for developers who have experience in developing websites or possess minor knowledge of how responsive websites work. No experience of high-level website development or performance tweaking is required.

  20. High Blood Pressure

    Science.gov (United States)

    ... factors Diabetes High blood pressure Family history Obesity Race/ethnicity Full list of causes and risk factors ... give Give monthly Memorials and tributes Donate a car Donate gently used items Stock donation Workplace giving ...

  1. High energy astrophysics

    International Nuclear Information System (INIS)

    Engel, A.R.

    1979-01-01

    High energy astrophysical research carried out at the Blackett Laboratory, Imperial College, London is reviewed. Work considered includes cosmic ray particle detection, x-ray astronomy, gamma-ray astronomy, gamma and x-ray bursts. (U.K.)

  2. Hyperglycemia (High Blood Glucose)

    Medline Plus

    Full Text Available ... Blood Pressure Physical Activity High Blood Glucose My Health Advisor Tools To Know Your Risk Alert Day ... DKA (Ketoacidosis) & Ketones Kidney Disease (Nephropathy) Gastroparesis Mental Health Step On Up Treatment & Care Blood Glucose Testing ...

  3. High-Definition Medicine.

    Science.gov (United States)

    Torkamani, Ali; Andersen, Kristian G; Steinhubl, Steven R; Topol, Eric J

    2017-08-24

    The foundation for a new era of data-driven medicine has been set by recent technological advances that enable the assessment and management of human health at an unprecedented level of resolution-what we refer to as high-definition medicine. Our ability to assess human health in high definition is enabled, in part, by advances in DNA sequencing, physiological and environmental monitoring, advanced imaging, and behavioral tracking. Our ability to understand and act upon these observations at equally high precision is driven by advances in genome editing, cellular reprogramming, tissue engineering, and information technologies, especially artificial intelligence. In this review, we will examine the core disciplines that enable high-definition medicine and project how these technologies will alter the future of medicine. Copyright © 2017 Elsevier Inc. All rights reserved.

  4. Hyperglycemia (High Blood Glucose)

    Medline Plus

    Full Text Available ... for Association Events Messaging Tools Recruiting Advocates Local Market Planning Training Webinars News & Events Advocacy News Call ... Care > Blood Glucose Testing Share: Print Page Text Size: A A A Listen En Español Hyperglycemia (High ...

  5. High Velocity Gas Gun

    Science.gov (United States)

    1988-01-01

    A video tape related to orbital debris research is presented. The video tape covers the process of loading a High Velocity Gas Gun and firing it into a mounted metal plate. The process is then repeated in slow motion.

  6. High resolution solar observations

    International Nuclear Information System (INIS)

    Title, A.

    1985-01-01

    Currently there is a world-wide effort to develop optical technology required for large diffraction limited telescopes that must operate with high optical fluxes. These developments can be used to significantly improve high resolution solar telescopes both on the ground and in space. When looking at the problem of high resolution observations it is essential to keep in mind that a diffraction limited telescope is an interferometer. Even a 30 cm aperture telescope, which is small for high resolution observations, is a big interferometer. Meter class and above diffraction limited telescopes can be expected to be very unforgiving of inattention to details. Unfortunately, even when an earth based telescope has perfect optics there are still problems with the quality of its optical path. The optical path includes not only the interior of the telescope, but also the immediate interface between the telescope and the atmosphere, and finally the atmosphere itself

  7. Landforms of High Mountains

    Directory of Open Access Journals (Sweden)

    Derek A. McDougall

    2016-05-01

    Full Text Available Reviewed: Landforms of High Mountains. By Alexander Stahr and Ewald Langenscheidt. Heidelberg, Germany: Springer, 2015. viii + 158 pp. US$ 129.99. Also available as an e-book. ISBN 978-3-642-53714-1.

  8. Hyperglycemia (High Blood Glucose)

    Medline Plus

    Full Text Available ... and Learning About Prediabetes Type 2 Diabetes Risk Test Lower Your Risk Healthy Eating Overweight Smoking High ... You at Risk? Diagnosis Lower Your Risk Risk Test Alert Day Prediabetes My Health Advisor Tools to ...

  9. Highly stretchable carbon aerogels.

    Science.gov (United States)

    Guo, Fan; Jiang, Yanqiu; Xu, Zhen; Xiao, Youhua; Fang, Bo; Liu, Yingjun; Gao, Weiwei; Zhao, Pei; Wang, Hongtao; Gao, Chao

    2018-02-28

    Carbon aerogels demonstrate wide applications for their ultralow density, rich porosity, and multifunctionalities. Their compressive elasticity has been achieved by different carbons. However, reversibly high stretchability of neat carbon aerogels is still a great challenge owing to their extremely dilute brittle interconnections and poorly ductile cells. Here we report highly stretchable neat carbon aerogels with a retractable 200% elongation through hierarchical synergistic assembly. The hierarchical buckled structures and synergistic reinforcement between graphene and carbon nanotubes enable a temperature-invariable, recoverable stretching elasticity with small energy dissipation (~0.1, 100% strain) and high fatigue resistance more than 10 6 cycles. The ultralight carbon aerogels with both stretchability and compressibility were designed as strain sensors for logic identification of sophisticated shape conversions. Our methodology paves the way to highly stretchable carbon and neat inorganic materials with extensive applications in aerospace, smart robots, and wearable devices.

  10. High Performance Macromolecular Material

    National Research Council Canada - National Science Library

    Forest, M

    2002-01-01

    .... In essence, most commercial high-performance polymers are processed through fiber spinning, following Nature and spider silk, which is still pound-for-pound the toughest liquid crystalline polymer...

  11. Physics and high technology

    International Nuclear Information System (INIS)

    Shao Liqin; Ma Junru.

    1992-01-01

    At present, the development of high technology has opened a new chapter in world's history of science and technology. This review describes the great impact of physics on high technology in six different fields (energy technology, new materials, information technology, biotechnology, space technology, and Ocean technology). It is shown that the new concepts and new methods created in physics and the special conditions and measurements established for physics researches not only deepen human's knowledge about nature but also point out new directions for engineering and technology. The achievements in physics have been more and more applied to high technology, while the development of high technology has explored some new research areas and raised many novel, important projects for physics. Therefore, it is important for us to strengthen the research on these major problems in physics

  12. High temperature battery. Hochtemperaturbatterie

    Energy Technology Data Exchange (ETDEWEB)

    Bulling, M.

    1992-06-04

    To prevent heat losses of a high temperature battery, it is proposed to make the incoming current leads in the area of their penetration through the double-walled insulating housing as thermal throttle, particularly spiral ones.

  13. High Energy Materials

    Indian Academy of Sciences (India)

    IAS Admin

    Propellants used in rockets, pyrotechnics used in festivities, explosives used for .... In World War II, Wernher von Braun designed the. V-2 rockets which were ... A. Solid Propellants. A solid propellant is made from low or diluted high explosives.

  14. Hyperglycemia (High Blood Glucose)

    Medline Plus

    Full Text Available ... your blood and then treating high blood glucose early will help you avoid problems associated with hyperglycemia. ... to detect hyperglycemia so you can treat it early — before it gets worse. If you're new ...

  15. High Plains Aquifer

    Data.gov (United States)

    Kansas Data Access and Support Center — These digital maps contain information on the altitude of the base, the extent, and the 1991 potentiometric surface (i.e. altitude of the water table) of the High...

  16. High Resolution Elevation Contours

    Data.gov (United States)

    Minnesota Department of Natural Resources — This dataset contains contours generated from high resolution data sources such as LiDAR. Generally speaking this data is 2 foot or less contour interval.

  17. HIGH-ALTITUDE ILLNESS

    Directory of Open Access Journals (Sweden)

    Dwitya Elvira

    2015-05-01

    Full Text Available AbstrakHigh-altitude illness (HAI merupakan sekumpulan gejala paru dan otak yang terjadi pada orang yang baru pertama kali mendaki ke ketinggian. HAI terdiri dari acute mountain sickness (AMS, high-altitude cerebral edema (HACE dan high-altitude pulmonary edema (HAPE. Tujuan tinjauan pustaka ini adalah agar dokter dan wisatawan memahami risiko, tanda, gejala, dan pengobatan high-altitude illness. Perhatian banyak diberikan terhadap penyakit ini seiring dengan meningkatnya popularitas olahraga ekstrim (mendaki gunung tinggi, ski dan snowboarding dan adanya kemudahan serta ketersediaan perjalanan sehingga jutaan orang dapat terpapar bahaya HAI. Di Pherice, Nepal (ketinggian 4343 m, 43% pendaki mengalami gejala AMS. Pada studi yang dilakukan pada tempat wisata di resort ski Colorado, Honigman menggambarkan kejadian AMS 22% pada ketinggian 1850 m sampai 2750 m, sementara Dean menunjukkan 42% memiliki gejala pada ketinggian 3000 m. Aklimatisasi merupakan salah satu tindakan pencegahan yang dapat dilakukan sebelum pendakian, selain beberapa pengobatan seperti asetazolamid, dexamethasone, phosopodiestrase inhibitor, dan ginko biloba.Kata kunci: high-altitude illness, acute mountain sickness, edema cerebral, pulmonary edema AbstractHigh-altitude illness (HAI is symptoms of lung and brain that occurs in people who first climb to altitude. HAI includes acute mountain sickness (AMS, high-altitude cerebral edema (HACE and high altitude pulmonary edema (HAPE. The objective of this review was to understand the risks, signs, symptoms, and treatment of high-altitude illness. The attention was given to this disease due to the rising popularity of extreme sports (high mountain climbing, skiing and snowboarding and the ease and availability of the current travelling, almost each year, millions of people could be exposed to the danger of HAI. In Pherice, Nepal (altitude 4343 m, 43% of climbers have symptoms of AMS. Furthermore, in a study conducted at sites in

  18. High Performance Concrete

    Directory of Open Access Journals (Sweden)

    Traian Oneţ

    2009-01-01

    Full Text Available The paper presents the last studies and researches accomplished in Cluj-Napoca related to high performance concrete, high strength concrete and self compacting concrete. The purpose of this paper is to raid upon the advantages and inconveniences when a particular concrete type is used. Two concrete recipes are presented, namely for the concrete used in rigid pavement for roads and another one for self-compacting concrete.

  19. Clustering at high redshifts

    International Nuclear Information System (INIS)

    Shaver, P.A.

    1986-01-01

    Evidence for clustering of and with high-redshift QSOs is discussed. QSOs of different redshifts show no clustering, but QSOs of similar redshifts appear to be clustered on a scale comparable to that of galaxies at the present epoch. In addition, spectroscopic studies of close pairs of QSOs indicate that QSOs are surrounded by a relatively high density of absorbing matter, possibly clusters of galaxies

  20. ANL high resolution injector

    International Nuclear Information System (INIS)

    Minehara, E.; Kutschera, W.; Hartog, P.D.; Billquist, P.

    1985-01-01

    The ANL (Argonne National Laboratory) high-resolution injector has been installed to obtain higher mass resolution and higher preacceleration, and to utilize effectively the full mass range of ATLAS (Argonne Tandem Linac Accelerator System). Preliminary results of the first beam test are reported briefly. The design and performance, in particular a high-mass-resolution magnet with aberration compensation, are discussed. 7 refs., 5 figs., 2 tabs

  1. High voltage engineering fundamentals

    CERN Document Server

    Kuffel, E; Hammond, P

    1984-01-01

    Provides a comprehensive treatment of high voltage engineering fundamentals at the introductory and intermediate levels. It covers: techniques used for generation and measurement of high direct, alternating and surge voltages for general application in industrial testing and selected special examples found in basic research; analytical and numerical calculation of electrostatic fields in simple practical insulation system; basic ionisation and decay processes in gases and breakdown mechanisms of gaseous, liquid and solid dielectrics; partial discharges and modern discharge detectors; and over

  2. High performance polymeric foams

    International Nuclear Information System (INIS)

    Gargiulo, M.; Sorrentino, L.; Iannace, S.

    2008-01-01

    The aim of this work was to investigate the foamability of high-performance polymers (polyethersulfone, polyphenylsulfone, polyetherimide and polyethylenenaphtalate). Two different methods have been used to prepare the foam samples: high temperature expansion and two-stage batch process. The effects of processing parameters (saturation time and pressure, foaming temperature) on the densities and microcellular structures of these foams were analyzed by using scanning electron microscopy

  3. Converting high boiling hydrocarbons

    Energy Technology Data Exchange (ETDEWEB)

    Terrisse, H; DuFour, L

    1929-02-12

    A process is given for converting high boiling hydrocarbons into low boiling hydrocarbons, characterized in that the high boiling hydrocarbons are heated to 200 to 500/sup 0/C in the presence of ferrous chloride and of such gases as hydrogen, water gas, and the like gases under a pressure of from 5 to 40 kilograms per square centimeter. The desulfurization of the hydrocarbons occurs simultaneously.

  4. High-pressure tritium

    International Nuclear Information System (INIS)

    Coffin, D.O.

    1976-01-01

    Some solutions to problems of compressing and containing tritium gas to 200 MPa at 700 0 K are discussed. The principal emphasis is on commercial compressors and high-pressure equipment that can be easily modified by the researcher for safe use with tritium. Experience with metal bellows and diaphragm compressors has been favorable. Selection of materials, fittings, and gauges for high-pressure tritium work is also reviewed briefly

  5. High energy positron imaging

    International Nuclear Information System (INIS)

    Chen Shengzu

    2003-01-01

    The technique of High Energy Positron Imaging (HEPI) is the new development and extension of Positron Emission Tomography (PET). It consists of High Energy Collimation Imaging (HECI), Dual Head Coincidence Detection Imaging (DHCDI) and Positron Emission Tomography (PET). We describe the history of the development and the basic principle of the imaging methods of HEPI in details in this paper. Finally, the new technique of the imaging fusion, which combined the anatomical image and the functional image together are also introduced briefly

  6. High speed heterostructure devices

    CERN Document Server

    Beer, Albert C; Willardson, R K; Kiehl, Richard A; Sollner, T C L Gerhard

    1994-01-01

    Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature. Key Features * The first complete review of InP-based HFETs and complementary HFETs, which promise very low power and high speed * Offers a complete, three-chapter review of resonant tunneling * Provides an emphasis on circuits as well as devices.

  7. High Burnup Effects Program

    International Nuclear Information System (INIS)

    Barner, J.O.; Cunningham, M.E.; Freshley, M.D.; Lanning, D.D.

    1990-04-01

    This is the final report of the High Burnup Effects Program (HBEP). It has been prepared to present a summary, with conclusions, of the HBEP. The HBEP was an international, group-sponsored research program managed by Battelle, Pacific Northwest Laboratories (BNW). The principal objective of the HBEP was to obtain well-characterized data related to fission gas release (FGR) for light water reactor (LWR) fuel irradiated to high burnup levels. The HBEP was organized into three tasks as follows: Task 1 -- high burnup effects evaluations; Task 2 -- fission gas sampling; and Task 3 -- parameter effects study. During the course of the HBEP, a program that extended over 10 years, 82 fuel rods from a variety of sources were characterized, irradiated, and then examined in detail after irradiation. The study of fission gas release at high burnup levels was the principal objective of the program and it may be concluded that no significant enhancement of fission gas release at high burnup levels was observed for the examined rods. The rim effect, an as yet unquantified contributor to athermal fission gas release, was concluded to be the one truly high-burnup effect. Though burnup enhancement of fission gas release was observed to be low, a full understanding of the rim region and rim effect has not yet emerged and this may be a potential area of further research. 25 refs., 23 figs., 4 tabs

  8. Kilburn High Road Revisited

    Directory of Open Access Journals (Sweden)

    Cristina Capineri

    2016-07-01

    Full Text Available Drawing on John Agnew’s (1987 theoretical framework for the analysis of place (location, locale and sense of place and on Doreen Massey’s (1991 interpretation of Kilburn High Road (London, the contribution develops an analysis of the notion of place in the case study of Kilburn High Road by comparing the semantics emerging from Doreen Massey’s interpretation of Kilburn High Road in the late Nineties with those from a selection of noisy and unstructured volunteered geographic information collected from Flickr photos and Tweets harvested in 2014–2015. The comparison shows how sense of place is dynamic and changing over time and explores Kilburn High Road through the categories of location, locale and sense of place derived from the qualitative analysis of VGI content and annotations. The contribution shows how VGI can contribute to discovering the unique relationship between people and place which takes the form given by Doreen Massey to Kilburn High Road and then moves on to the many forms given by people experiencing Kilburn High Road through a photo, a Tweet or a simple narrative. Finally, the paper suggests that the analysis of VGI content can contribute to detect the relevant features of street life, from infrastructure to citizens’ perceptions, which should be taken into account for a more human-centered approach in planning or service management.

  9. High Gradient Accelerator Research

    International Nuclear Information System (INIS)

    Temkin, Richard

    2016-01-01

    The goal of the MIT program of research on high gradient acceleration is the development of advanced acceleration concepts that lead to a practical and affordable next generation linear collider at the TeV energy level. Other applications, which are more near-term, include accelerators for materials processing; medicine; defense; mining; security; and inspection. The specific goals of the MIT program are: • Pioneering theoretical research on advanced structures for high gradient acceleration, including photonic structures and metamaterial structures; evaluation of the wakefields in these advanced structures • Experimental research to demonstrate the properties of advanced structures both in low-power microwave cold test and high-power, high-gradient test at megawatt power levels • Experimental research on microwave breakdown at high gradient including studies of breakdown phenomena induced by RF electric fields and RF magnetic fields; development of new diagnostics of the breakdown process • Theoretical research on the physics and engineering features of RF vacuum breakdown • Maintaining and improving the Haimson / MIT 17 GHz accelerator, the highest frequency operational accelerator in the world, a unique facility for accelerator research • Providing the Haimson / MIT 17 GHz accelerator facility as a facility for outside users • Active participation in the US DOE program of High Gradient Collaboration, including joint work with SLAC and with Los Alamos National Laboratory; participation of MIT students in research at the national laboratories • Training the next generation of Ph. D. students in the field of accelerator physics.

  10. High Caloric Diet for ALS Patients: High Fat, High Carbohydrate or High Protein

    Directory of Open Access Journals (Sweden)

    Sarvin Sanaie

    2015-01-01

    Full Text Available ALS is a fatal motor neurodegenerative disease characterized by muscle atrophy and weakness, dysarthria, and dysphagia. The mean survival of ALS patients is three to five years, with 50% of those diagnosed dying within three years of onset (1. A multidisciplinary approach is crucial to set an appropriate plan for metabolic and nutritional support in ALS. Nutritional management incorporates a continuous assessment and implementation of dietary modifications throughout the duration of the disease. The nutritional and metabolic approaches to ALS should start when the diagnosis of ALS is made and should become an integral part of the continuous care to the patient, including nutritional surveillance, dietary counseling, management of dysphagia, and enteral nutrition when needed. Malnutrition and lean body mass loss are frequent findings in ALS patients necessitating comprehensive energy requirement assessment for these patients. Malnutrition is an independent prognostic factor for survival in ALS with a 7.7 fold increase in risk of death. Malnutrition is estimated to develop in one quarter to half of people with ALS (2. Adequate calorie and protein provision would diminish muscle loss in this vulnerable group of patients. Although appropriate amount of energy to be administered is yet to be established, high calorie diet is expected to be effective for potential improvement of survival; ALS patients do not normally receive adequate  intake of energy. A growing number of clinicians suspect that a high calorie diet implemented early in their disease may help people with ALS meet their increased energy needs and extend their survival. Certain high calorie supplements appear to be safe and well tolerated by people with ALS according to studies led by Universitäts klinikum Ulm's and, appear to stabilize body weight within 3 months. In a recent study by Wills et al., intake of high-carbohydrate low-fat supplements has been recommended in ALS patients (3

  11. High availability using virtualization

    International Nuclear Information System (INIS)

    Calzolari, Federico; Arezzini, Silvia; Ciampa, Alberto; Mazzoni, Enrico; Domenici, Andrea; Vaglini, Gigliola

    2010-01-01

    High availability has always been one of the main problems for a data center. Till now high availability was achieved by host per host redundancy, a highly expensive method in terms of hardware and human costs. A new approach to the problem can be offered by virtualization. Using virtualization, it is possible to achieve a redundancy system for all the services running on a data center. This new approach to high availability allows the running virtual machines to be distributed over a small number of servers, by exploiting the features of the virtualization layer: start, stop and move virtual machines between physical hosts. The 3RC system is based on a finite state machine, providing the possibility to restart each virtual machine over any physical host, or reinstall it from scratch. A complete infrastructure has been developed to install operating system and middleware in a few minutes. To virtualize the main servers of a data center, a new procedure has been developed to migrate physical to virtual hosts. The whole Grid data center SNS-PISA is running at the moment in virtual environment under the high availability system.

  12. High temperature storage loop :

    Energy Technology Data Exchange (ETDEWEB)

    Gill, David Dennis; Kolb, William J.

    2013-07-01

    A three year plan for thermal energy storage (TES) research was created at Sandia National Laboratories in the spring of 2012. This plan included a strategic goal of providing test capability for Sandia and for the nation in which to evaluate high temperature storage (>650ÀC) technology. The plan was to scope, design, and build a flow loop that would be compatible with a multitude of high temperature heat transfer/storage fluids. The High Temperature Storage Loop (HTSL) would be reconfigurable so that it was useful for not only storage testing, but also for high temperature receiver testing and high efficiency power cycle testing as well. In that way, HTSL was part of a much larger strategy for Sandia to provide a research and testing platform that would be integral for the evaluation of individual technologies funded under the SunShot program. DOEs SunShot program seeks to reduce the price of solar technologies to 6/kWhr to be cost competitive with carbon-based fuels. The HTSL project sought to provide evaluation capability for these SunShot supported technologies. This report includes the scoping, design, and budgetary costing aspects of this effort

  13. Cryogenic high current discharges

    International Nuclear Information System (INIS)

    Meierovich, B.E.

    1994-01-01

    Z-pinches formed from frozen deuterium fibers by a rapidly rising current have enhanced stability and high neutron yield. The efforts to understand the enhanced stability and neutron yield on the basis of classical picture of Bennett equilibrium of the current channel has not given satisfactory results. The traditional approach does not take into account the essential difference between the frozen deuterium fiber Z-pinches and the usual Z-pinches such as exploding wires or classical gas-puffed Z-pinches. The very low temperature of the fiber atoms (10 K), together with the rapidly rising current, result in the coexistence of a high current channel with unionized fiber atoms for a substantial period of time. This phenomena lasts during the risetime. This approach takes into account the difference of the breakdown in a dielectric deuterium fiber and the breakdown in a metallic wire. This difference is essential to the understanding of specific features of cryogenic high current discharges. Z-pinches in frozen deuterium fibers should be considered as a qualitatively new phenomenon on the boundary of cryogenic and high current physics. It is a start of a new branch in plasma physics: the physics of cryogenic high current discharges

  14. High Altitude and Heart

    Directory of Open Access Journals (Sweden)

    Murat Yalcin

    2011-04-01

    Full Text Available Nowadays, situations associated with high altitude such as mountaineering, aviation increasingly draw the attention of people. Gas pressure decreases and hypoxia is encountered when climbing higher. Physiological and pathological responses of human body to different heights are different. Therefore, physiological and pathological changes that may occur together with height and to know the clinical outcomes of these are important . Acute mountain sickness caused by high altitude and high altitude cerebral edema are preventable diseases with appropriate precautions. Atmospheric oxygen decreasing with height, initiates many adaptive mechanisms. These adaptation mechanisms and acclimatization vary widely among individuals because of reasons such as environmental factors, exercise and cold. High altitude causes different changes in the cardiovascular system with various mechanisms. Although normal individuals easily adapt to these changes, this situation can lead to undesirable results in people with heart disease. For this reason, it should be known the effective evaluation of the people with known heart disease before traveling to high altitude and the complications due to the changes with height and the recommendations can be made to these patients. [TAF Prev Med Bull 2011; 10(2.000: 211-222

  15. High resolution data acquisition

    Science.gov (United States)

    Thornton, Glenn W.; Fuller, Kenneth R.

    1993-01-01

    A high resolution event interval timing system measures short time intervals such as occur in high energy physics or laser ranging. Timing is provided from a clock (38) pulse train (37) and analog circuitry (44) for generating a triangular wave (46) synchronously with the pulse train (37). The triangular wave (46) has an amplitude and slope functionally related to the time elapsed during each clock pulse in the train. A converter (18, 32) forms a first digital value of the amplitude and slope of the triangle wave at the start of the event interval and a second digital value of the amplitude and slope of the triangle wave at the end of the event interval. A counter (26) counts the clock pulse train (37) during the interval to form a gross event interval time. A computer (52) then combines the gross event interval time and the first and second digital values to output a high resolution value for the event interval.

  16. High energy radiation detector

    International Nuclear Information System (INIS)

    Vosburgh, K.G.

    1975-01-01

    The high energy radiation detector described comprises a set of closely spaced wedge reflectors. Each wedge reflector is composed of three sides forming identical isoceles triangles with a common apex and an open base forming an equilateral triangle. The length of one side of the base is less than the thickness of the coat of material sensitive to high energy radiation. The wedge reflectors reflect the light photons spreading to the rear of the coat in such a way that each reflected track is parallel to the incident track of the light photon spreading rearwards. The angle of the three isosceles triangles with a common apex is between 85 and 95 deg. The first main surface of the coat of high energy radiation sensitive material is in contact with the projecting edges of the surface of the wedge reflectors of the reflecting element [fr

  17. Theoretical high energy physics

    International Nuclear Information System (INIS)

    Lee, T.D.

    1993-01-01

    Brief reports are given on the work of several professors. The following areas are included: quantum chromodynamics calculations using numerical lattice gauge theory and a high-speed parallel computer; the ''spin wave'' description of bosonic particles moving on a lattice with same-site exclusion; a high-temperature expansion to 13th order for the O(4)-symmetric φ 4 model on a four-dimensional F 4 lattice; spin waves and lattice bosons; superconductivity of C 60 ; meson-meson interferometry in heavy-ion collisions; baryon number violation in the Standard Model in high-energy collisions; hard thermal loops in QCD; electromagnetic interactions of anyons; the relation between Bose-Einstein and BCS condensations; Euclidean wormholes with topology S 1 x S 2 x R; vacuum decay and symmetry breaking by radiative corrections; inflationary solutions to the cosmological horizon and flatness problems; and magnetically charged black holes

  18. High-tech entrepreneurship

    DEFF Research Database (Denmark)

    Bernasconi, Michel; Harris, Simon; Mønsted, Mette

    ; entrepreneurial finance; marketing technological innovations; and high-tech incubation management. Including case studies to give practical insights into genuine business examples, this comprehensive book has a distinctly 'real-world' focus throughout.Edited by a multi-national team, this comprehensive book......High-tech businesses form a crucial part of entrepreneurial activity - in some ways representing very typical examples of entrepreneurship, yet in some ways representing quite different challenges. The uncertainty in innovation and advanced technology makes it difficult to use conventional economic...... planning models, and also means that the management skills used in this area must be more responsive to issues of risk, uncertainty and evaluation than in conventional business opportunities. Whilst entrepreneurial courses do reflect the importance of high-tech businesses, they often lack the resources...

  19. High brightness electron accelerator

    International Nuclear Information System (INIS)

    Sheffield, R.L.; Carlsten, B.E.; Young, L.M.

    1994-01-01

    A compact high brightness linear accelerator is provided for use, e.g., in a free electron laser. The accelerator has a first plurality of accelerating cavities having end walls with four coupling slots for accelerating electrons to high velocities in the absence of quadrupole fields. A second plurality of cavities receives the high velocity electrons for further acceleration, where each of the second cavities has end walls with two coupling slots for acceleration in the absence of dipole fields. The accelerator also includes a first cavity with an extended length to provide for phase matching the electron beam along the accelerating cavities. A solenoid is provided about the photocathode that emits the electrons, where the solenoid is configured to provide a substantially uniform magnetic field over the photocathode surface to minimize emittance of the electrons as the electrons enter the first cavity. 5 figs

  20. High-energy detector

    Science.gov (United States)

    Bolotnikov, Aleksey E [South Setauket, NY; Camarda, Giuseppe [Farmingville, NY; Cui, Yonggang [Upton, NY; James, Ralph B [Ridge, NY

    2011-11-22

    The preferred embodiments are directed to a high-energy detector that is electrically shielded using an anode, a cathode, and a conducting shield to substantially reduce or eliminate electrically unshielded area. The anode and the cathode are disposed at opposite ends of the detector and the conducting shield substantially surrounds at least a portion of the longitudinal surface of the detector. The conducting shield extends longitudinally to the anode end of the detector and substantially surrounds at least a portion of the detector. Signals read from one or more of the anode, cathode, and conducting shield can be used to determine the number of electrons that are liberated as a result of high-energy particles impinge on the detector. A correction technique can be implemented to correct for liberated electron that become trapped to improve the energy resolution of the high-energy detectors disclosed herein.

  1. Timetabling at High Schools

    DEFF Research Database (Denmark)

    Sørensen, Matias

    on the publicly available XHSTT format for modeling instances and solutions of the HSTP) and the Danish High School Timetabling Problem (DHSTP). For both problems a complex Mixed-Integer Programming (MIP) model is developed, and in both cases are empirical tests performed on a large number of real-life datasets......High school institutions face a number of important planning problems during each schoolyear. This Ph.D. thesis considers two of these planning problems: The High School Timetabling Problem (HSTP) and the Consultation Timetabling Problem (CTP). Furthermore a framework for handling various planning....... The second part contains the main scienti_c papers composed during the Ph.D. study. The third part of the thesis also contains scienti_c papers, but these are included as an appendix. In the HSTP, the goal is to obtain a timetable for the forthcoming school-year. A timetable consists of lectures scheduled...

  2. High power microwaves

    CERN Document Server

    Benford, James; Schamiloglu, Edl

    2016-01-01

    Following in the footsteps of its popular predecessors, High Power Microwaves, Third Edition continues to provide a wide-angle, integrated view of the field of high power microwaves (HPMs). This third edition includes significant updates in every chapter as well as a new chapter on beamless systems that covers nonlinear transmission lines. Written by an experimentalist, a theorist, and an applied theorist, respectively, the book offers complementary perspectives on different source types. The authors address: * How HPM relates historically and technically to the conventional microwave field * The possible applications for HPM and the key criteria that HPM devices have to meet in order to be applied * How high power sources work, including their performance capabilities and limitations * The broad fundamental issues to be addressed in the future for a wide variety of source types The book is accessible to several audiences. Researchers currently in the field can widen their understanding of HPM. Present or pot...

  3. High frequency energy measurements

    International Nuclear Information System (INIS)

    Stotlar, S.C.

    1981-01-01

    High-frequency (> 100 MHz) energy measurements present special problems to the experimenter. Environment or available electronics often limit the applicability of a given detector type. The physical properties of many detectors are frequency dependent and in some cases, the physical effect employed can be frequency dependent. State-of-the-art measurements generally involve a detection scheme in association with high-speed electronics and a method of data recording. Events can be single or repetitive shot requiring real time, sampling, or digitizing data recording. Potential modification of the pulse by the detector and the associated electronics should not be overlooked. This presentation will review typical applications, methods of choosing a detector, and high-speed detectors. Special considerations and limitations of some applications and devices will be described

  4. Clustering high dimensional data

    DEFF Research Database (Denmark)

    Assent, Ira

    2012-01-01

    High-dimensional data, i.e., data described by a large number of attributes, pose specific challenges to clustering. The so-called ‘curse of dimensionality’, coined originally to describe the general increase in complexity of various computational problems as dimensionality increases, is known...... to render traditional clustering algorithms ineffective. The curse of dimensionality, among other effects, means that with increasing number of dimensions, a loss of meaningful differentiation between similar and dissimilar objects is observed. As high-dimensional objects appear almost alike, new approaches...... for clustering are required. Consequently, recent research has focused on developing techniques and clustering algorithms specifically for high-dimensional data. Still, open research issues remain. Clustering is a data mining task devoted to the automatic grouping of data based on mutual similarity. Each cluster...

  5. High strength alloys

    Science.gov (United States)

    Maziasz, Phillip James [Oak Ridge, TN; Shingledecker, John Paul [Knoxville, TN; Santella, Michael Leonard [Knoxville, TN; Schneibel, Joachim Hugo [Knoxville, TN; Sikka, Vinod Kumar [Oak Ridge, TN; Vinegar, Harold J [Bellaire, TX; John, Randy Carl [Houston, TX; Kim, Dong Sub [Sugar Land, TX

    2010-08-31

    High strength metal alloys are described herein. At least one composition of a metal alloy includes chromium, nickel, copper, manganese, silicon, niobium, tungsten and iron. System, methods, and heaters that include the high strength metal alloys are described herein. At least one heater system may include a canister at least partially made from material containing at least one of the metal alloys. At least one system for heating a subterranean formation may include a tubular that is at least partially made from a material containing at least one of the metal alloys.

  6. High loading uranium plate

    International Nuclear Information System (INIS)

    Wiencek, T.C.; Domagala, R.F.; Thresh, H.R.

    1990-01-01

    Two embodiments of a high uranium fuel plate are disclosed which contain a meat comprising structured uranium compound confined between a pari of diffusion bonded ductile metal cladding plates uniformly covering the meat, the meat hiving a uniform high fuel loading comprising a content of uranium compound greater than about 45 Vol. % at a porosity not greater than about 10 Vol. %. In a first embodiment, the meat is a plurality of parallel wires of uranium compound. In a second embodiment, the meat is a dispersion compact containing uranium compound. The fuel plates are fabricated by a hot isostatic pressing process

  7. JUNOS High Availability

    CERN Document Server

    Sonderegger, James; Milne, Kieran; Palislamovic, Senad

    2009-01-01

    Whether your network is a complex carrier or just a few machines supporting a small enterprise, JUNOS High Availability will help you build reliable and resilient networks that include Juniper Networks devices. With this book's valuable advice on software upgrades, scalability, remote network monitoring and management, high-availability protocols such as VRRP, and more, you'll have your network uptime at the five, six, or even seven nines -- or 99.99999% of the time. Rather than focus on "greenfield" designs, the authors explain how to intelligently modify multi-vendor networks. You'll learn

  8. High availability IT services

    CERN Document Server

    Critchley, Terry

    2014-01-01

    This book starts with the basic premise that a service is comprised of the 3Ps-products, processes, and people. Moreover, these entities and their sub-entities interlink to support the services that end users require to run and support a business. This widens the scope of any availability design far beyond hardware and software. It also increases the potential for service failure for reasons beyond just hardware and software; the concept of logical outages. High Availability IT Services details the considerations for designing and running highly available ""services"" and not just the systems

  9. High intensity hadron accelerators

    International Nuclear Information System (INIS)

    Teng, L.C.

    1989-05-01

    This rapporteur report consists mainly of two parts. Part I is an abridged review of the status of all High Intensity Hadron Accelerator projects in the world in semi-tabulated form for quick reference and comparison. Part II is a brief discussion of the salient features of the different technologies involved. The discussion is based mainly on my personal experiences and opinions, tempered, I hope, by the discussions I participated in in the various parallel sessions of the workshop. In addition, appended at the end is my evaluation and expression of the merits of high intensity hadron accelerators as research facilities for nuclear and particle physics

  10. Unexpected high plasma cobalamin

    DEFF Research Database (Denmark)

    Arendt, Johan F B; Nexo, Ebba

    2013-01-01

    It is well-established that more than 8% of patients examined for vitamin B12 deficiency unexpectedly have increased plasma levels of the vitamin, but so far there are no guidelines for the clinical interpretation of such findings. In this review, we summarise known associations between high plasma...... cobalamin binding proteins, transcobalamin and haptocorrin. Based on current knowledge, we suggest a strategy for the clinical interpretation of unexpected high plasma cobalamin. Since a number of the associated diseases are critical and life-threatening, the strategy promotes the concept of 'think...

  11. High speed rotary drum

    Energy Technology Data Exchange (ETDEWEB)

    Sagara, H

    1970-03-25

    A high speed rotary drum is disclosed in which the rotor vessel is a double-wall structure comprising an inner wave-shaped pipe inserted coaxially within an outer straight pipe, the object being to provide a strengthened composite light-weight structure. Since force induced axial deformation of the straight pipe and radial deformation of the corrugated pipe are small, the composite effectively resists external forces and, if the waves of the inner pipe are given a sufficient amplitude, the thickness of both pipes may be reduced to lower the overall weight. Thus high angular velocities can be obtained to separate U/sup 235/ from gaseous UF/sub 6/.

  12. Theoretical high energy physics

    International Nuclear Information System (INIS)

    Lee, T.D.

    1991-01-01

    This report discusses theoretical research in high energy physics at Columbia University. Some of the research topics discussed are: quantum chromodynamics with dynamical fermions; lattice gauge theory; scattering of neutrinos by photons; atomic physics constraints on the properties of ultralight-ultraweak gauge bosons; black holes; Chern- Simons physics; S-channel theory of superconductivity; charged boson system; gluon-gluon interactions; high energy scattering in the presence of instantons; anyon physics; causality constraints on primordial magnetic manopoles; charged black holes with scalar hair; properties of Chern-Aimona-Higgs solitons; and extended inflationary universe

  13. High Pressure Biomass Gasification

    Energy Technology Data Exchange (ETDEWEB)

    Agrawal, Pradeep K [Georgia Tech Research Corporation, Atlanta, GA (United States)

    2016-07-29

    According to the Billion Ton Report, the U.S. has a large supply of biomass available that can supplement fossil fuels for producing chemicals and transportation fuels. Agricultural waste, forest residue, and energy crops offer potential benefits: renewable feedstock, zero to low CO2 emissions depending on the specific source, and domestic supply availability. Biomass can be converted into chemicals and fuels using one of several approaches: (i) biological platform converts corn into ethanol by using depolymerization of cellulose to form sugars followed by fermentation, (ii) low-temperature pyrolysis to obtain bio-oils which must be treated to reduce oxygen content via HDO hydrodeoxygenation), and (iii) high temperature pyrolysis to produce syngas (CO + H2). This last approach consists of producing syngas using the thermal platform which can be used to produce a variety of chemicals and fuels. The goal of this project was to develop an improved understanding of the gasification of biomass at high pressure conditions and how various gasification parameters might affect the gasification behavior. Since most downstream applications of synags conversion (e.g., alcohol synthesis, Fischer-Tropsch synthesis etc) involve utilizing high pressure catalytic processes, there is an interest in carrying out the biomass gasification at high pressure which can potentially reduce the gasifier size and subsequent downstream cleaning processes. It is traditionally accepted that high pressure should increase the gasification rates (kinetic effect). There is also precedence from coal gasification literature from the 1970s that high pressure gasification would be a beneficial route to consider. Traditional approach of using thermogravimetric analyzer (TGA) or high-pressure themogravimetric analyzer (PTGA) worked well in understanding the gasification kinetics of coal gasification which was useful in designing high pressure coal gasification processes. However

  14. High temperature radioisotope capsule

    International Nuclear Information System (INIS)

    Bradshaw, G.B.

    1976-01-01

    A high temperature radioisotope capsule made up of three concentric cylinders, with the isotope fuel located within the innermost cylinder is described. The innermost cylinder has hemispherical ends and is constructed of a tantalum alloy. The intermediate cylinder is made of a molybdenum alloy and is capable of withstanding the pressure generated by the alpha particle decay of the fuel. The outer cylinder is made of a platinum alloy of high resistance to corrosion. A gas separates the innermost cylinder from the intermediate cylinder and the intermediate cylinder from the outer cylinder

  15. High alumina refractories

    International Nuclear Information System (INIS)

    Simao, L.C.; Lopes, A.B.; Galvao Filho, N.B.; Souza, R.B. de

    1989-01-01

    High alumina refractories with 92 to 96.5% Al 2 O 3 were produced using brown and white fused as aggregate. Those refractories present only alumina-α and mullite as crystalline mineralogical phase. Other physical and chemical characteristics are similar to the ones found in refractories produced in Brazil, Japan and U.S.A. The most important physical and chemical tests used for the characterization of the raw materials and refractories, complemented by those realized at high temperatures, plus X-ray Difractometry and optical microscopy are presented, besides the refractory formulation and main parameters of production [pt

  16. High-level verification

    CERN Document Server

    Lerner, Sorin; Kundu, Sudipta

    2011-01-01

    Given the growing size and heterogeneity of Systems on Chip (SOC), the design process from initial specification to chip fabrication has become increasingly complex. This growing complexity provides incentive for designers to use high-level languages such as C, SystemC, and SystemVerilog for system-level design. While a major goal of these high-level languages is to enable verification at a higher level of abstraction, allowing early exploration of system-level designs, the focus so far for validation purposes has been on traditional testing techniques such as random testing and scenario-based

  17. High School Principals and the High School Journalism Program.

    Science.gov (United States)

    Peterson, Jane W.

    A study asked selected high school principals to respond to statements about the value of high school journalism to the high school student and about the rights and responsibilities of the high school journalist. These responses were then checked against such information as whether or not the high school principal had worked on a high school…

  18. High performance conductometry

    International Nuclear Information System (INIS)

    Saha, B.

    2000-01-01

    Inexpensive but high performance systems have emerged progressively for basic and applied measurements in physical and analytical chemistry on one hand, and for on-line monitoring and leak detection in plants and facilities on the other. Salient features of the developments will be presented with specific examples

  19. High beta tokamaks

    International Nuclear Information System (INIS)

    Dory, R.A.; Berger, D.P.; Charlton, L.A.; Hogan, J.T.; Munro, J.K.; Nelson, D.B.; Peng, Y.K.M.; Sigmar, D.J.; Strickler, D.J.

    1978-01-01

    MHD equilibrium, stability, and transport calculations are made to study the accessibility and behavior of ''high beta'' tokamak plasmas in the range β approximately 5 to 15 percent. For next generation devices, beta values of at least 8 percent appear to be accessible and stable if there is a conducting surface nearby

  20. High temperature niobium alloys

    International Nuclear Information System (INIS)

    Wojcik, C.C.

    1991-01-01

    Niobium alloys are currently being used in various high temperature applications such as rocket propulsion, turbine engines and lighting systems. This paper presents an overview of the various commercial niobium alloys, including basic manufacturing processes, properties and applications. Current activities for new applications include powder metallurgy, coating development and fabrication of advanced porous structures for lithium cooled heat pipes

  1. High School Book Fairs

    Science.gov (United States)

    Fitzgerald, Marianne

    2006-01-01

    Many secondary students have given up the joy of reading. When asked why they don't read for pleasure, students came up with many different reasons, the first being lack of time. High school students are busy with after school jobs, sports, homework, etc. With the growing number of students enrolled in AP classes, not only is there not much time…

  2. Hyperglycemia (High Blood Glucose)

    Medline Plus

    Full Text Available ... Carbohydrate Counting Make Your Carbs Count Glycemic Index Low-Calorie Sweeteners Sugar and Desserts Fitness Exercise & Type ... Checking Your Blood Glucose A1C and eAG Hypoglycemia (Low blood glucose) Hyperglycemia (High blood glucose) Dawn Phenomenon ...

  3. Highly oxidized superconductors

    Science.gov (United States)

    Morris, Donald E.

    1994-01-01

    Novel superconducting materials in the form of compounds, structures or phases are formed by performing otherwise known syntheses in a highly oxidizing atmosphere rather than that created by molecular oxygen at atmospheric pressure or below. This leads to the successful synthesis of novel superconducting compounds which are thermodynamically stable at the conditions under which they are formed.

  4. High strength ferritic alloy

    International Nuclear Information System (INIS)

    1977-01-01

    A high strength ferritic steel is specified in which the major alloying elements are chromium and molybdenum, with smaller quantities of niobium, vanadium, silicon, manganese and carbon. The maximum swelling is specified for various irradiation conditions. Rupture strength is also specified. (U.K.)

  5. High temperature interface superconductivity

    International Nuclear Information System (INIS)

    Gozar, A.; Bozovic, I.

    2016-01-01

    Highlight: • This review article covers the topic of high temperature interface superconductivity. • New materials and techniques used for achieving interface superconductivity are discussed. • We emphasize the role played by the differences in structure and electronic properties at the interface with respect to the bulk of the constituents. - Abstract: High-T_c superconductivity at interfaces has a history of more than a couple of decades. In this review we focus our attention on copper-oxide based heterostructures and multi-layers. We first discuss the technique, atomic layer-by-layer molecular beam epitaxy (ALL-MBE) engineering, that enabled High-T_c Interface Superconductivity (HT-IS), and the challenges associated with the realization of high quality interfaces. Then we turn our attention to the experiments which shed light on the structure and properties of interfacial layers, allowing comparison to those of single-phase films and bulk crystals. Both ‘passive’ hetero-structures as well as surface-induced effects by external gating are discussed. We conclude by comparing HT-IS in cuprates and in other classes of materials, especially Fe-based superconductors, and by examining the grand challenges currently laying ahead for the field.

  6. High altitude organic gold

    DEFF Research Database (Denmark)

    Pouliot, Mariève; Pyakurel, Dipesh; Smith-Hall, Carsten

    2018-01-01

    Ethnopharmacological relevance Ophiocordyceps sinensis (Berk.) G.H.Sung, J.M.Sung, Hywel-Jones & Spatafora, a high altitude Himalayan fungus-caterpillar product found in alpine meadows in China, Bhutan, Nepal, and India, has been used in the Traditional Chinese Medicine system for over 2000 years...

  7. High Brightness OLED Lighting

    Energy Technology Data Exchange (ETDEWEB)

    Spindler, Jeffrey [OLEDWorks LLC; Kondakova, Marina [OLEDWorks LLC; Boroson, Michael [OLEDWorks LLC; Hamer, John [OLEDWorks LLC

    2016-05-25

    In this work we describe the technology developments behind our current and future generations of high brightness OLED lighting panels. We have developed white and amber OLEDs with excellent performance based on the stacking approach. Current products achieve 40-60 lm/W, while future developments focus on achieving 80 lm/W or higher.

  8. Knees Lifted High

    Centers for Disease Control (CDC) Podcasts

    The Eagle Books are a series of four books that are brought to life by wise animal characters - Mr. Eagle, Miss Rabbit, and Coyote - who engage Rain That Dances and his young friends in the joy of physical activity, eating healthy foods, and learning from their elders about health and diabetes prevention. Knees Lifted High gives children fun ideas for active outdoor play.

  9. Hyperglycemia (High Blood Glucose)

    Medline Plus

    Full Text Available ... In Memory In Honor Become a Member En Español Type 1 Type 2 About Us Online Community ... Page Text Size: A A A Listen En Español Hyperglycemia (High Blood Glucose) Hyperglycemia is the technical ...

  10. Theoretical high energy physics

    International Nuclear Information System (INIS)

    Lee, T.D.

    1992-01-01

    This progress report discusses research by Columbia University staff in high energy physics. Some of the topics discussed are as follows: lattice gauge theory; quantum chromodynamics; parity doublets; solitons; baryon number violation; black holes; magnetic monopoles; gluon plasma; Chern-Simons theory; and the inflationary universe

  11. High-Sensitivity Spectrophotometry.

    Science.gov (United States)

    Harris, T. D.

    1982-01-01

    Selected high-sensitivity spectrophotometric methods are examined, and comparisons are made of their relative strengths and weaknesses and the circumstances for which each can best be applied. Methods include long path cells, noise reduction, laser intracavity absorption, thermocouple calorimetry, photoacoustic methods, and thermo-optical methods.…

  12. Investing in High School

    Science.gov (United States)

    Green, Daniel G.

    2012-01-01

    Strapped for cash, a Massachusetts high school creates its own venture capital fund to incentivize teachers to create programs that improve student learning. The result has been higher test scores and higher job satisfaction. One important program is credited with helping close the achievement gap at the school, while others have helped ambitious…

  13. High-fiber foods

    Science.gov (United States)

    ... page: //medlineplus.gov/ency/patientinstructions/000193.htm High-fiber foods To use the sharing features on this page, ... Read food labels carefully to see how much fiber they have. Choose foods that have higher amounts of fiber, such as ...

  14. High resolution drift chambers

    International Nuclear Information System (INIS)

    Va'vra, J.

    1985-07-01

    High precision drift chambers capable of achieving less than or equal to 50 μm resolutions are discussed. In particular, we compare so called cool and hot gases, various charge collection geometries, several timing techniques and we also discuss some systematic problems. We also present what we would consider an ''ultimate'' design of the vertex chamber. 50 refs., 36 figs., 6 tabs

  15. Hyperglycemia (High Blood Glucose)

    Medline Plus

    Full Text Available ... Text Size: A A A Listen En Español Hyperglycemia (High Blood Glucose) Hyperglycemia is the technical term ... body can't use insulin properly. What Causes Hyperglycemia? A number of things can cause hyperglycemia: If ...

  16. High luminosity particle colliders

    International Nuclear Information System (INIS)

    Palmer, R.B.; Gallardo, J.C.

    1997-03-01

    The authors consider the high energy physics advantages, disadvantages and luminosity requirements of hadron (pp, p anti p), lepton (e + e - , μ + μ - ) and photon-photon colliders. Technical problems in obtaining increased energy in each type of machine are presented. The machines relative size are also discussed

  17. Fascination at high pressures

    International Nuclear Information System (INIS)

    Chidambaram, R.

    1992-01-01

    Research at high pressures has developed into an interdisciplinary area which has important implications for and applications in the areas of physics, chemistry, materials sciences, planetary sciences, biology, engineering sciences and technology. The state of-the-art in this field is reviewed and future directions are indicated. (M.G.B.)

  18. CSTI High Capacity Power

    International Nuclear Information System (INIS)

    Winter, J.M.

    1989-01-01

    The SP-100 program was established in 1983 by DOD, DOE, and NASA as a joint program to develop the technology necessary for space nuclear power systems for military and civil application. During FY-86 and 87, the NASA SP-100 Advanced Technology Program was devised to maintain the momentum of promising technology advancement efforts started during Phase 1 of SP-100 and to strengthen, in key areas, the chances for successful development and growth capability of space nuclear reactor power systems for future space applications. In FY-88, the Advanced Technology Program was incorporated into NASA's new Civil Space Technology Initiative (CSTI). The CSTI Program was established to provide the foundation for technology development in automation and robotics, information, propulsion, and power. The CSTI High Capacity Power Program builds on the technology efforts of the SP-100 program, incorporates the previous NASA SP-100 Advanced Technology project, and provides a bridge to NASA Project Pathfinder. The elements of CSTI High Capacity Power development include Conversion Systems, Thermal Management, Power Management, System Diagnostics, and Environmental Interactions. Technology advancement in all areas, including materials, is required to assure the high reliability and 7 to 10 year lifetime demanded for future space nuclear power systems. The overall program will develop and demonstrate the technology base required to provide a wide range of modular power systems as well as allowing mission independence from solar and orbital attitude requirements. Several recent advancements in CSTI High Capacity power development will be discussed

  19. High Collection Nonimaging Optics

    Science.gov (United States)

    Winston, Roland

    1989-07-01

    Nonimaging optics departs from the methods of traditional optical design to develop instead techniques for maximizing the collecting power of concentrating elements and systems. Designs which exceed the concentration attainable with focusing techniques by factors of four or more and approach the theoretical limit are possible (ideal concentrators). The methodology for designing high collection nonirnaging systems is described.

  20. High energy astrophysics

    International Nuclear Information System (INIS)

    Shklorsky, I.S.

    1979-01-01

    A selected list of articles of accessible recent review articles and conference reports, wherein up-to-date summaries of various topics in the field of high energy astrophysics can be found, is presented. A special report outlines work done in the Soviet Union in this area. (Auth.)

  1. High frequency electromagnetic dosimetry

    CERN Document Server

    Sánchez-Hernández, David A

    2009-01-01

    Along with the growth of RF and microwave technology applications, there is a mounting concern about the possible adverse effects over human health from electromagnetic radiation. Addressing this issue and putting it into perspective, this groundbreaking resource provides critical details on the latest advances in high frequency electromagnetic dosimetry.

  2. Reshaping High School English.

    Science.gov (United States)

    Pirie, Bruce

    This book takes up the question of what shape high school English studies should take in the coming years. It describes an English program that blends philosophical depth with classroom practicality. Drawing examples from commonly taught texts such as "Macbeth,""To Kill a Mockingbird," and "Lord of the Flies," the…

  3. Nuclei in high forms

    International Nuclear Information System (INIS)

    Szymanski, Z.; Berger, J.F.; Heenen, P.H.; Heyde, K.; Haas, B.; Janssens, R.; Paya, D.; Gogny, D.; Huber, G.; Bjoernholm, S.; Brack, M.

    1991-01-01

    The purpose of 1991 Joliot-Curie Summer School is to review the most advances in the understanding of the nuclei physics after the considerable progress in gamma spectroscopy. It covers the following topics: Highly and super-deformed nuclei, nuclear structures, mean-field approach and beyond, fission isomers, nuclear excitations with long lifetime and metal clusters

  4. General Algorithm (High level)

    Indian Academy of Sciences (India)

    First page Back Continue Last page Overview Graphics. General Algorithm (High level). Iteratively. Use Tightness Property to remove points of P1,..,Pi. Use random sampling to get a Random Sample (of enough points) from the next largest cluster, Pi+1. Use the Random Sampling Procedure to approximate ci+1 using the ...

  5. High Temperature Electrolysis

    DEFF Research Database (Denmark)

    Elder, Rachael; Cumming, Denis; Mogensen, Mogens Bjerg

    2015-01-01

    High temperature electrolysis of carbon dioxide, or co-electrolysis of carbon dioxide and steam, has a great potential for carbon dioxide utilisation. A solid oxide electrolysis cell (SOEC), operating between 500 and 900. °C, is used to reduce carbon dioxide to carbon monoxide. If steam is also i...

  6. High on walking

    DEFF Research Database (Denmark)

    Woythal, Bente Martinsen; Haahr, Anita; Dreyer, Pia

    2018-01-01

    a leg, and people who live with Parkinson’s disease. The analysis of the data is inspired by Paul Ricoeur’s philosophy of interpretation. Four themes were identified: (a) I feel high in two ways; (b) Walking has to be automatic; (c) Every Monday, I walk with the girls in the park; and (d) I dream...

  7. High-temperature superconductivity

    International Nuclear Information System (INIS)

    Lynn, J.W.

    1990-01-01

    This book discusses development in oxide materials with high superconducting transition temperature. Systems with Tc well above liquid nitrogen temperature are already a reality and higher Tc's are anticipated. The author discusses how the idea of a room-temperature superconductor appears to be a distinctly possible outcome of materials research

  8. Hyperglycemia (High Blood Glucose)

    Medline Plus

    Full Text Available ... You At Risk? Diabetes Basics Living with Diabetes Food & Fitness In My Community Advocacy Research & Practice Ways to Give Close Are You at Risk? Home Prevention Diagnosing Diabetes and Learning About Prediabetes Type 2 Diabetes Risk Test Lower Your Risk Healthy Eating Overweight Smoking High ...

  9. High brightness ion source

    International Nuclear Information System (INIS)

    Dreyfus, R.W.; Hodgson, R.T.

    1975-01-01

    A high brightness ion beam is obtainable by using lasers to excite atoms or molecules from the ground state to an ionized state in increments, rather than in one step. The spectroscopic resonances of the atom or molecule are used so that relatively long wavelength, low power lasers can be used to obtain such ion beam

  10. High energy battery. Hochenergiebatterie

    Energy Technology Data Exchange (ETDEWEB)

    Boehm, H.; Beyermann, G.; Bulling, M.

    1992-03-26

    In a high energy battery with a large number of individual cells in a housing with a cooling medium flowing through it, it is proposed that the cooling medium should be guided so that it only affects one or both sides of the cells thermally.

  11. Ghana's high forests

    NARCIS (Netherlands)

    Oduro, K.A.

    2016-01-01

    Deforestation and forest degradation in the tropics have been receiving both scientific and political attention in recent decades due to its impacts on the environment and on human livelihoods. In Ghana, the continuous decline of forest resources and the high demand for timber have raised

  12. High energy beam cooling

    International Nuclear Information System (INIS)

    Berger, H.; Herr, H.; Linnecar, T.; Millich, A.; Milss, F.; Rubbia, C.; Taylor, C.S.; Meer, S. van der; Zotter, B.

    1980-01-01

    The group concerned itself with the analysis of cooling systems whose purpose is to maintain the quality of the high energy beams in the SPS in spite of gas scattering, RF noise, magnet ripple and beam-beam interactions. Three types of systems were discussed. The status of these activities is discussed below. (orig.)

  13. Danish High Performance Concretes

    DEFF Research Database (Denmark)

    Nielsen, M. P.; Christoffersen, J.; Frederiksen, J.

    1994-01-01

    In this paper the main results obtained in the research program High Performance Concretes in the 90's are presented. This program was financed by the Danish government and was carried out in cooperation between The Technical University of Denmark, several private companies, and Aalborg University...... concretes, workability, ductility, and confinement problems....

  14. High energy colliders

    International Nuclear Information System (INIS)

    Palmer, R.B.; Gallardo, J.C.

    1997-02-01

    The authors consider the high energy physics advantages, disadvantages and luminosity requirements of hadron (pp, p anti p), lepton (e + e - , μ + μ - ) and photon-photon colliders. Technical problems in obtaining increased energy in each type of machine are presented. The machines relative size are also discussed

  15. Rocky Mountain High.

    Science.gov (United States)

    Hill, David

    2001-01-01

    Describes Colorado's Eagle Rock School, which offers troubled teens a fresh start by transporting them to a tuition- free campus high in the mountains. The program encourages spiritual development as well as academic growth. The atmosphere is warm, loving, structured, and nonthreatening. The article profiles several students' experiences at the…

  16. High performance homes

    DEFF Research Database (Denmark)

    Beim, Anne; Vibæk, Kasper Sánchez

    2014-01-01

    . Consideration of all these factors is a precondition for a truly integrated practice and as this chapter demonstrates, innovative project delivery methods founded on the manufacturing of prefabricated buildings contribute to the production of high performance homes that are cost effective to construct, energy...

  17. High Energy Physics

    Science.gov (United States)

    Untitled Document [Argonne Logo] [DOE Logo] High Energy Physics Home Division ES&H Personnel Collider Physics Cosmic Frontier Cosmic Frontier Theory & Computing Detector R&D Electronic Design Mechanical Design Neutrino Physics Theoretical Physics Seminars HEP Division Seminar HEP Lunch Seminar HEP

  18. High Selectivity Oxygen Delignification

    Energy Technology Data Exchange (ETDEWEB)

    Arthur J. Ragauskas

    2005-09-30

    The overall objective of this program was to develop improved extended oxygen delignification (EOD) technologies for current U.S. pulp mill operations. This was accomplished by: (1) Identifying pulping conditions that optimize O and OO performance; (2) Identifying structural features of lignin that enhance reactivity towards EOD of high kappa pulps; (3) Identifying factors minimizing carbohydrate degradation and improve pulp strength of EOD high kappa pulps; (4) Developing a simple, reproducible method of quantifying yield gains from EOD; and (5) Developing process conditions that significantly reduce the capital requirements of EOD while optimizing the yield benefits. Key research outcomes included, demonstrating the use of a mini-O sequence such as (E+O)Dkf:0.05(E+O) or Dkf:0.05(E+O)(E+O) without interstage washing could capture approximately 60% of the delignification efficiency of a conventional O-stage without the major capital requirements associated with an O-stage for conventional SW kraft pulps. The rate of formation and loss of fiber charge during an O-stage stage can be employed to maximize net fiber charge. Optimal fiber charge development and delignification are two independent parameters and do not parallel each other. It is possible to utilize an O-stage to enhance overall cellulosic fiber charge of low and high kappa SW kraft pulps which is beneficial for physical strength properties. The application of NIR and multi-variant analysis was developed into a rapid and simple method of determining the yield of pulp from an oxygen delignification stage that has real-world mill applications. A focus point of this program was the demonstration that Kraft pulping conditions and oxygen delignification of high and low-kappa SW and HW pulps are intimately related. Improved physical pulp properties and yield can be delivered by controlling the H-factor and active alkali charge. Low AA softwood kraft pulp with a kappa number 30 has an average improvement of 2% in

  19. High Voltage Seismic Generator

    Science.gov (United States)

    Bogacz, Adrian; Pala, Damian; Knafel, Marcin

    2015-04-01

    This contribution describes the preliminary result of annual cooperation of three student research groups from AGH UST in Krakow, Poland. The aim of this cooperation was to develop and construct a high voltage seismic wave generator. Constructed device uses a high-energy electrical discharge to generate seismic wave in ground. This type of device can be applied in several different methods of seismic measurement, but because of its limited power it is mainly dedicated for engineering geophysics. The source operates on a basic physical principles. The energy is stored in capacitor bank, which is charged by two stage low to high voltage converter. Stored energy is then released in very short time through high voltage thyristor in spark gap. The whole appliance is powered from li-ion battery and controlled by ATmega microcontroller. It is possible to construct larger and more powerful device. In this contribution the structure of device with technical specifications is resented. As a part of the investigation the prototype was built and series of experiments conducted. System parameter was measured, on this basis specification of elements for the final device were chosen. First stage of the project was successful. It was possible to efficiently generate seismic waves with constructed device. Then the field test was conducted. Spark gap wasplaced in shallowborehole(0.5 m) filled with salt water. Geophones were placed on the ground in straight line. The comparison of signal registered with hammer source and sparker source was made. The results of the test measurements are presented and discussed. Analysis of the collected data shows that characteristic of generated seismic signal is very promising, thus confirms possibility of practical application of the new high voltage generator. The biggest advantage of presented device after signal characteristics is its size which is 0.5 x 0.25 x 0.2 m and weight approximately 7 kg. This features with small li-ion battery makes

  20. Highly pathogenic avian influenza.

    Science.gov (United States)

    Swayne, D E; Suarez, D L

    2000-08-01

    Highly pathogenic (HP) avian influenza (AI) (HPAI) is an extremely contagious, multi-organ systemic disease of poultry leading to high mortality, and caused by some H5 and H7 subtypes of type A influenza virus, family Orthomyxoviridae. However, most AI virus strains are mildly pathogenic (MP) and produce either subclinical infections or respiratory and/or reproductive diseases in a variety of domestic and wild bird species. Highly pathogenic avian influenza is a List A disease of the Office International des Epizooties, while MPAI is neither a List A nor List B disease. Eighteen outbreaks of HPAI have been documented since the identification of AI virus as the cause of fowl plague in 1955. Mildly pathogenic avian influenza viruses are maintained in wild aquatic bird reservoirs, occasionally crossing over to domestic poultry and causing outbreaks of mild disease. Highly pathogenic avian influenza viruses do not have a recognised wild bird reservoir, but can occasionally be isolated from wild birds during outbreaks in domestic poultry. Highly pathogenic avian influenza viruses have been documented to arise from MPAI viruses through mutations in the haemagglutinin surface protein. Prevention of exposure to the virus and eradication are the accepted methods for dealing with HPAI. Control programmes, which imply allowing a low incidence of infection, are not an acceptable method for managing HPAI, but have been used during some outbreaks of MPAI. The components of a strategy to deal with MPAI or HPAI include surveillance and diagnosis, biosecurity, education, quarantine and depopulation. Vaccination has been used in some control and eradication programmes for AI.

  1. High population increase rates.

    Science.gov (United States)

    1991-09-01

    In addition to its economic and ethnic difficulties, the USSR faces several pressing demographic problems, including high population increase rates in several of its constituent republics. It has now become clear that although the country's rigid centralized planning succeeded in covering the basic needs of people, it did not lead to welfare growth. Since the 1970s, the Soviet economy has remained sluggish, which as led to increase in the death and birth rates. Furthermore, the ideology that held that demography could be entirely controlled by the country's political and economic system is contradicted by current Soviet reality, which shows that religion and ethnicity also play a significant role in demographic dynamics. Currently, Soviet republics fall under 2 categories--areas with high or low natural population increase rates. Republics with low rates consist of Christian populations (Armenia, Moldavia, Georgia, Byelorussia, Russia, Lithuania, Estonia, Latvia, Ukraine), while republics with high rates are Muslim (Tadzhikistan, Uzbekistan, Turkmenistan, Kirgizia, Azerbaijan Kazakhstan). The later group has natural increase rates as high as 3.3%. Although the USSR as a whole is not considered a developing country, the later group of republics fit the description of the UNFPA's priority list. Another serious demographic issue facing the USSR is its extremely high rate of abortion. This is especially true in the republics of low birth rates, where up to 60% of all pregnancies are terminated by induced abortions. Up to 1/5 of the USSR's annual health care budget is spent on clinical abortions -- money which could be better spent on the production of contraceptives. Along with the recent political and economic changes, the USSR is now eager to deal with its demographic problems.

  2. High energy nuclear physics

    International Nuclear Information System (INIS)

    Meyer, J.

    1988-01-01

    The 1988 progress report of the High Energy Nuclear Physics laboratory (Polytechnic School, France), is presented. The Laboratory research program is focused on the fundamental physics of interactions, on the new techniques for the acceleration of charged particles and on the nuclei double beta decay. The experiments are performed on the following topics: the measurement of the π 0 inclusive production and the photons production in very high energy nuclei-nuclei interactions and the nucleon stability. Concerning the experiments under construction, a new detector for LEP, the study and simulation of the hadronic showers in a calorimeter and the H1 experiment (HERA), are described. The future research programs and the published papers are listed [fr

  3. Dual Campus High School

    Directory of Open Access Journals (Sweden)

    Carmen P. Mombourquette

    2013-04-01

    Full Text Available September 2010 witnessed the opening of the first complete dual campus high school in Alberta. Catholic Central High School, which had been in existence since 1967 in one building, now offered courses to students on two campuses. The “dual campus” philosophy was adopted so as to ensure maximum program flexibility for students. The philosophy, however, was destined to affect student engagement and staff efficacy as the change in organizational structure, campus locations, and course availability was dramatic. Changing school organizational structure also had the potential of affecting student achievement. A mixed-methods study utilizing engagement surveys, efficacy scales, and interviews with students and teachers was used to ascertain the degree of impact. The results of the study showed that minimal impact occurred to levels of student engagement, minor negative impact to staff efficacy, and a slight increase to student achievement results.

  4. High resolution photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Arko, A.J.

    1988-01-01

    Photoelectron Spectroscopy (PES) covers a very broad range of measurements, disciplines, and interests. As the next generation light source, the FEL will result in improvements over the undulator that are larger than the undulater improvements over bending magnets. The combination of high flux and high inherent resolution will result in several orders of magnitude gain in signal to noise over measurements using synchrotron-based undulators. The latter still require monochromators. Their resolution is invariably strongly energy-dependent so that in the regions of interest for many experiments (h upsilon > 100 eV) they will not have a resolving power much over 1000. In order to study some of the interesting phenomena in actinides (heavy fermions e.g.) one would need resolving powers of 10 4 to 10 5 . These values are only reachable with the FEL

  5. High-Performance Networking

    CERN Multimedia

    CERN. Geneva

    2003-01-01

    The series will start with an historical introduction about what people saw as high performance message communication in their time and how that developed to the now to day known "standard computer network communication". It will be followed by a far more technical part that uses the High Performance Computer Network standards of the 90's, with 1 Gbit/sec systems as introduction for an in depth explanation of the three new 10 Gbit/s network and interconnect technology standards that exist already or emerge. If necessary for a good understanding some sidesteps will be included to explain important protocols as well as some necessary details of concerned Wide Area Network (WAN) standards details including some basics of wavelength multiplexing (DWDM). Some remarks will be made concerning the rapid expanding applications of networked storage.

  6. High temperature structural silicides

    International Nuclear Information System (INIS)

    Petrovic, J.J.

    1997-01-01

    Structural silicides have important high temperature applications in oxidizing and aggressive environments. Most prominent are MoSi 2 -based materials, which are borderline ceramic-intermetallic compounds. MoSi 2 single crystals exhibit macroscopic compressive ductility at temperatures below room temperature in some orientations. Polycrystalline MoSi 2 possesses elevated temperature creep behavior which is highly sensitive to grain size. MoSi 2 -Si 3 N 4 composites show an important combination of oxidation resistance, creep resistance, and low temperature fracture toughness. Current potential applications of MoSi 2 -based materials include furnace heating elements, molten metal lances, industrial gas burners, aerospace turbine engine components, diesel engine glow plugs, and materials for glass processing

  7. High temperature materials characterization

    Science.gov (United States)

    Workman, Gary L.

    1990-01-01

    A lab facility for measuring elastic moduli up to 1700 C was constructed and delivered. It was shown that the ultrasonic method can be used to determine elastic constants of materials from room temperature to their melting points. The ease in coupling high frequency acoustic energy is still a difficult task. Even now, new coupling materials and higher power ultrasonic pulsers are being suggested. The surface was only scratched in terms of showing the full capabilities of either technique used, especially since there is such a large learning curve in developing proper methodologies to take measurements into the high temperature region. The laser acoustic system does not seem to have sufficient precision at this time to replace the normal buffer rod methodology.

  8. High field electron linacs

    International Nuclear Information System (INIS)

    Le Duff, J.

    1985-12-01

    High field electron linacs are considered as potential candidates to provide very high energies beyond LEP. Since almost twenty years not much improvement has been made on linac technologies as they have been mostly kept at low and medium energies to be used as injectors for storage rings. Today, both their efficiency and their performances are being reconsidered, and for instance the pulse compression sheme developed at SLAC and introduced to upgrade the energy of that linac is a first step towards a new generation of linear accelerators. However this is not enough in terms of power consumption and more development is needed to improve both the efficiency of accelerating structures and the performances of RF power sources

  9. High latitude ionospheric structure

    International Nuclear Information System (INIS)

    1984-06-01

    The Earth's ionosphere is an important element in solar-terrestrial energy transfer processes. As a major terrestrial sink for many solar and magnetospheric events, the ionosphere has characteristic features that are traced to such seemingly remote phenomena as solar flares, radiation belt wave-particle interactions and magnetospheric substorms. In considering the multiple of solar-terrestrial plasma interactions, it is important to recognize that the high-latitude ionosphere is not altogether a simple receptor of various energy deposition processes. The high-altitude ionosphere plays an active feedback role by controlling the conductivity at the base of far-reaching magnetic field lines and by providing a plasma source for the magnetosphere. Indeed, the role of the ionosphere during magnetospheric substorms is emerging as a topic for meaningful study in the overall picture of magnetospheric-ionospheric coupling

  10. High voltage isolation transformer

    Science.gov (United States)

    Clatterbuck, C. H.; Ruitberg, A. P. (Inventor)

    1985-01-01

    A high voltage isolation transformer is provided with primary and secondary coils separated by discrete electrostatic shields from the surfaces of insulating spools on which the coils are wound. The electrostatic shields are formed by coatings of a compound with a low electrical conductivity which completely encase the coils and adhere to the surfaces of the insulating spools adjacent to the coils. Coatings of the compound also line axial bores of the spools, thereby forming electrostatic shields separating the spools from legs of a ferromagnetic core extending through the bores. The transformer is able to isolate a high constant potential applied to one of its coils, without the occurrence of sparking or corona, by coupling the coatings, lining the axial bores to the ferromagnetic core and by coupling one terminal of each coil to the respective coating encasing the coil.

  11. High thermal load component

    International Nuclear Information System (INIS)

    Fuse, Toshiaki; Tachikawa, Nobuo.

    1996-01-01

    A cooling tube made of a pure copper is connected to the inner portion of an armour (heat resistant member) made of an anisotropic carbon/carbon composite (CFC) material. The CFC material has a high heat conductivity in longitudinal direction of fibers and has low conductivity in perpendicular thereto. Fibers extending in the armour from a heat receiving surface just above the cooling tube are directly connected to the cooling tube. A portion of the fibers extending from a heat receiving surface other than portions not just above the cooling tube is directly bonded to the cooling tube. Remaining fibers are disposed so as to surround the cooling tube. The armour and the cooling tube are soldered using an active metal flux. With such procedures, high thermal load components for use in a thermonuclear reactor are formed, which are excellent in a heat removing characteristic and hardly causes defects such as crackings and peeling. (I.N.)

  12. High Latitude Polygons

    Science.gov (United States)

    2005-01-01

    26 September 2005 This Mars Global Surveyor (MGS) Mars Orbiter Camera (MOC) image shows polygonal patterned ground on a south high-latitude plain. The outlines of the polygons, like the craters and hills in this region, are somewhat enhanced by the presence of bright frost left over from the previous winter. On Earth, polygons at high latitudes would usually be attributed to the seasonal freezing and thawing cycles of ground ice. The origin of similar polygons on Mars is less certain, but might also be an indicator of ground ice. Location near: 75.3oS, 113.2oW Image width: width: 3 km (1.9 mi) Illumination from: upper left Season: Southern Spring

  13. Prospects at high energies

    International Nuclear Information System (INIS)

    Quigg, C.

    1988-11-01

    I discuss some possibilities for neutrino experiments in the fixed-target environment of the SPS, Tevatron, and UNK, with their primary proton beams of 0.4, 0.9, and 3.0 TeV. The emphasis is on unfinished business: issues that have been recognized for some time, but not yet resolved. Then I turn to prospects for proton-proton colliders to explore the 1-TeV scale. I review the motivation for new physics in the neighborhood of 1 TeV and mention some discovery possibilities for high-energy, high-luminosity hadron colliders and the implications they would have for neutrino physics. I raise the possibility of the direct study of neutrino interactions in hadron colliders. I close with a report on the status of the SSC project. 38 refs., 17 figs

  14. High Contrast CRT.

    Science.gov (United States)

    1980-02-01

    barium dioxide contains about 0.02% iron. For economical reasons, glass manufacturer’s probably use materials of lesser purity than reagent grade...otherwise the same procedure is followed. 2.4 Nonreflecting (NR) Film The NR film is a light abosrbing inhomogeneous film utilized to achieve a high...hour. No surface distortion of the disc occurred, thus ruling out any reaction between the carbon support plate and the glass disc that might have

  15. High-temperature superconductivity

    International Nuclear Information System (INIS)

    Ginzburg, V.L.

    1987-07-01

    After a short account of the history of experimental studies on superconductivity, the microscopic theory of superconductivity, the calculation of the control temperature and its possible maximum value are presented. An explanation of the mechanism of superconductivity in recently discovered superconducting metal oxide ceramics and the perspectives for the realization of new high-temperature superconducting materials are discussed. 56 refs, 2 figs, 3 tabs

  16. High energy medical accelerators

    International Nuclear Information System (INIS)

    Mandrillon, P.

    1990-01-01

    The treatment of tumours with charged particles, ranging from protons to 'light ions' (carbon, oxygen, neon), has many advantages, but up to now has been little used because of the absence of facilities. After the successful pioneering work carried out with accelerators built for physics research, machines dedicated to this new radiotherapy are planned or already in construction. These high energy medical accelerators are presented in this paper. (author) 15 refs.; 14 figs.; 8 tabs

  17. HIGH EFFICIENCY TURBINE

    OpenAIRE

    VARMA, VIJAYA KRUSHNA

    2012-01-01

    Varma designed ultra modern and high efficiency turbines which can use gas, steam or fuels as feed to produce electricity or mechanical work for wide range of usages and applications in industries or at work sites. Varma turbine engines can be used in all types of vehicles. These turbines can also be used in aircraft, ships, battle tanks, dredgers, mining equipment, earth moving machines etc, Salient features of Varma Turbines. 1. Varma turbines are simple in design, easy to manufac...

  18. Highly Concurrent Scalar Processing.

    Science.gov (United States)

    1986-01-01

    rearrangement arise from data dependencies between instructions, hence it is critical that artificial - dependencies are eliminated whenever possible...An important class of artificial depen- *. dencies arise due to register reuse. In the following example, no parallelism can be • . exploited in the...specific procedure call site. The use of inteligent procedure expansion techniques is expected to be crucial to the achievement of high performance

  19. Ultra high resolution tomography

    Energy Technology Data Exchange (ETDEWEB)

    Haddad, W.S.

    1994-11-15

    Recent work and results on ultra high resolution three dimensional imaging with soft x-rays will be presented. This work is aimed at determining microscopic three dimensional structure of biological and material specimens. Three dimensional reconstructed images of a microscopic test object will be presented; the reconstruction has a resolution on the order of 1000 A in all three dimensions. Preliminary work with biological samples will also be shown, and the experimental and numerical methods used will be discussed.

  20. High boiling point hydrocarbons

    Energy Technology Data Exchange (ETDEWEB)

    Pier, M

    1929-04-29

    A process is given for the production of hydrocarbons of high boiling point, such as lubricating oils, from bituminous substances, such as varieties of coal, shale, or other solid distillable carbonaceous materials. The process consists of treating the initial materials with organic solvents and then subjecting the products extracted from the initial materials, preferably directly, to a reducing treatment in respect to temperature, pressure, and time. The reduction treatment is performed by means of hydrogen under pressure.

  1. High temperature materials

    International Nuclear Information System (INIS)

    2003-01-01

    The aim of this workshop is to share the needs of high temperature and nuclear fuel materials for future nuclear systems, to take stock of the status of researches in this domain and to propose some cooperation works between the different research organisations. The future nuclear systems are the very high temperature (850 to 1200 deg. C) gas cooled reactors (GCR) and the molten salt reactors (MSR). These systems include not only the reactor but also the fabrication and reprocessing of the spent fuel. This document brings together the transparencies of 13 communications among the 25 given at the workshop: 1) characteristics and needs of future systems: specifications, materials and fuel needs for fast spectrum GCR and very high temperature GCR; 2) high temperature materials out of neutron flux: thermal barriers: materials, resistance, lifetimes; nickel-base metal alloys: status of knowledge, mechanical behaviour, possible applications; corrosion linked with the gas coolant: knowledge and problems to be solved; super-alloys for turbines: alloys for blades and discs; corrosion linked with MSR: knowledge and problems to be solved; 3) materials for reactor core structure: nuclear graphite and carbon; fuel assembly structure materials of the GCR with fast neutron spectrum: status of knowledge and ceramics and cermets needs; silicon carbide as fuel confinement material, study of irradiation induced defects; migration of fission products, I and Cs in SiC; 4) materials for hydrogen production: status of the knowledge and needs for the thermochemical cycle; 5) technologies: GCR components and the associated material needs: compact exchangers, pumps, turbines; MSR components: valves, exchangers, pumps. (J.S.)

  2. High-Assurance Spiral

    Science.gov (United States)

    2017-11-01

    HIGH-ASSURANCE SPIRAL CARNEGIE MELLON UNIVERSITY NOVEMBER 2017 FINAL TECHNICAL REPORT APPROVED FOR PUBLIC RELEASE; DISTRIBUTION UNLIMITED STINFO...MU 7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) Carnegie Mellon University 5000 Forbes Ave Pittsburgh, PA 15217 8. PERFORMING ORGANIZATION...Approved for Public Release; Distribution Unlimited. Carnegie Mellon Carnegie Mellon HA SPIRAL Code Synthesis KeYmaera X Hybrid Theorem Prover

  3. High resolution (transformers.

    Science.gov (United States)

    Garcia-Souto, Jose A; Lamela-Rivera, Horacio

    2006-10-16

    A novel fiber-optic interferometric sensor is presented for vibrations measurements and analysis. In this approach, it is shown applied to the vibrations of electrical structures within power transformers. A main feature of the sensor is that an unambiguous optical phase measurement is performed using the direct detection of the interferometer output, without external modulation, for a more compact and stable implementation. High resolution of the interferometric measurement is obtained with this technique (transformers are also highlighted.

  4. Theoretical high energy physics

    International Nuclear Information System (INIS)

    Lee, T.D.

    1990-05-01

    This report discusses progress on theoretical high energy physics at Columbia University in New York City. Some of the topics covered are: Chern-Simons gauge field theories; dynamical fermion QCD calculations; lattice gauge theory; the standard model of weak and electromagnetic interactions; Boson-fermion model of cuprate superconductors; S-channel theory of superconductivity and axial anomaly and its relation to spin in the parton model

  5. High speed network sampling

    OpenAIRE

    Rindalsholt, Ole Arild

    2005-01-01

    Master i nettverks- og systemadministrasjon Classical Sampling methods play an important role in the current practice of Internet measurement. With today’s high speed networks, routers cannot manage to generate complete Netflow data for every packet. They have to perform restricted sampling. This thesis summarizes some of the most important sampling schemes and their applications before diving into an analysis on the effect of sampling Netflow records.

  6. Deuterium high pressure target

    International Nuclear Information System (INIS)

    Perevozchikov, V.V.; Yukhimchuk, A.A.; Vinogradov, Yu.I.

    2001-01-01

    The design of the deuterium high-pressure target is presented. The target having volume of 76 cm 3 serves to provide the experimental research of muon catalyzed fusion reactions in ultra-pure deuterium in the temperature range 80-800 K under pressures of up to 150 MPa. The operation of the main systems of the target is described: generation and purification of deuterium gas, refrigeration, heating, evacuation, automated control system and data collection system

  7. Ghana's high forests

    OpenAIRE

    Oduro, K.A.

    2016-01-01

    Deforestation and forest degradation in the tropics have been receiving both scientific and political attention in recent decades due to its impacts on the environment and on human livelihoods. In Ghana, the continuous decline of forest resources and the high demand for timber have raised stakeholders concerns about the future timber production prospects in the country. The principal drivers of deforestation and forest degradation in Ghana are agricultural expansion (50%), wood harvesting (35...

  8. High energy nuclear excitations

    International Nuclear Information System (INIS)

    Gogny, D.; Decharge, J.

    1983-09-01

    The main purpose of this talk is to see whether a simple description of the nuclear excitations permits one to characterize some of the high energy structures recently observed. The discussion is based on the linear response to different external fields calculated using the Random Phase Approximation. For those structure in heavy ion collisions at excitation energies above 50 MeV which cannot be explained with such a simple approach, we discuss a possible mechanism for this heavy ion scattering

  9. High energy dosimetry

    International Nuclear Information System (INIS)

    Ruhm, W.

    2010-01-01

    Full text: Currently, quantification of doses from high-energy radiation fields is a topical issue. This is so because high-energy neutrons play an important role for radiation exposure of air crew members and personnel outside the shielding of ion therapy facilities. In an effort to study air crew exposure from cosmic radiation in detail, two Bonner Sphere Spectrometers (BSSs) have recently been installed to measure secondary neutrons from cosmic radiation, one at the environmental research station 'Schneefernerhaus' at an altitude of 2650 m on the Zugspitze mountain, Germany, the other at the Koldewey station close to the North Pole on Spitsbergen. Based on the measured neutron fluence distributions and on fluence-to-dose conversion coefficients, mean ambient dose equivalent rate values of 75.0 ± 2.9 nSv/h and 8.7 ± 0.6 nSv/h were obtained for October 2008, respectively. Neutrons with energies above about 20 MeV contribute about 50% to dose, at 2650 m. Ambient dose equivalent rates measured by means of a standard rem counter and an extended rem counter at the Schneefernerhaus confirm this result. In order to study the response of state-of-the-art radiation instrumentation in such a high-energy radiation field, a benchmark exercise that included both measurements in and simulation of the stray neutron radiation field at the high-energy particle accelerator at GSI, Germany, were performed. This CONRAD (COordinated Network for RAdiation Dosimetry) project was funded by the European Commission, and the organizational framework was provided by the European Radiation Dosimetry Group, EURADOS. The Monte Carlo simulations of the radiation field and the experimental determination of the neutron spectra with various Bonner Sphere Spectrometers suggest the neutron fluence distributions to be very similar to those of secondary neutrons from cosmic radiation. The results of this intercomparison exercise in terms of ambient dose equivalent are also discussed

  10. High energy physics

    International Nuclear Information System (INIS)

    Kernan, A.; Shen, B.C.; Ma, E.

    1997-01-01

    This proposal is for the continuation of the High Energy Physics program at the University of California at Riverside. In hadron collider physics the authors will complete their transition from experiment UA1 at CERN to the DZERO experiment at Fermilab. On experiment UA1 their effort will concentrate on data analysis at Riverside. At Fermilab they will coordinate the high voltage system for all detector elements. They will also carry out hardware/software development for the D0 muon detector. The TPC/Two-Gamma experiment has completed its present phase of data-taking after accumulating 160 pb - 1 of luminosity. The UC Riverside group will continue data and physics analysis and make minor hardware improvement for the high luminosity run. The UC Riverside group is participating in design and implementation of the data acquisition system for the OPAL experiment at LEP. Mechanical and electronics construction of the OPAL hadron calorimeter strip readout system is proceeding on schedule. Data analysis and Monte Carlo detector simulation efforts are proceeding in preparation for the first physics run when IEP operation comenses in fall 1989

  11. High performance sapphire windows

    Science.gov (United States)

    Bates, Stephen C.; Liou, Larry

    1993-02-01

    High-quality, wide-aperture optical access is usually required for the advanced laser diagnostics that can now make a wide variety of non-intrusive measurements of combustion processes. Specially processed and mounted sapphire windows are proposed to provide this optical access to extreme environment. Through surface treatments and proper thermal stress design, single crystal sapphire can be a mechanically equivalent replacement for high strength steel. A prototype sapphire window and mounting system have been developed in a successful NASA SBIR Phase 1 project. A large and reliable increase in sapphire design strength (as much as 10x) has been achieved, and the initial specifications necessary for these gains have been defined. Failure testing of small windows has conclusively demonstrated the increased sapphire strength, indicating that a nearly flawless surface polish is the primary cause of strengthening, while an unusual mounting arrangement also significantly contributes to a larger effective strength. Phase 2 work will complete specification and demonstration of these windows, and will fabricate a set for use at NASA. The enhanced capabilities of these high performance sapphire windows will lead to many diagnostic capabilities not previously possible, as well as new applications for sapphire.

  12. High Thermal Conductivity Materials

    CERN Document Server

    Shinde, Subhash L

    2006-01-01

    Thermal management has become a ‘hot’ field in recent years due to a need to obtain high performance levels in many devices used in such diverse areas as space science, mainframe and desktop computers, optoelectronics and even Formula One racing cars! Thermal solutions require not just taking care of very high thermal flux, but also ‘hot spots’, where the flux densities can exceed 200 W/cm2. High thermal conductivity materials play an important role in addressing thermal management issues. This volume provides readers a basic understanding of the thermal conduction mechanisms in these materials and discusses how the thermal conductivity may be related to their crystal structures as well as microstructures developed as a result of their processing history. The techniques for accurate measurement of these properties on large as well as small scales have been reviewed. Detailed information on the thermal conductivity of diverse materials including aluminum nitride (AlN), silicon carbide (SiC), diamond, a...

  13. ABB high burnup fuel

    International Nuclear Information System (INIS)

    Andersson, S.; Helmersson, S.; Nilsson, S.; Jourdain, P.; Karlsson, L.; Limback, M.; Garde, A.M.

    1999-01-01

    Fuel designed and fabricated by ABB is now operating in 40 PWRs and BWRs in Europe, the United States and Korea. An excellent fuel reliability track record has been established. High burnups are proven for both PWR and BWR. Thermal margin improving features and advanced burnable absorber concepts enable the utilities to adopt demanding duty cycles to meet new economic objectives. In particular we note the excellent reliability record of ABB PWR fuel equipped with Guardian TM debris filter proven to meet the 6 rod-cycles fuel failure goal, and the out-standing operating record of the SVEA 10 x 10 fuel, where ABB is the only vendor to date with batch experience to high burnup. ABB is dedicated to maintain high fuel reliability as well as continually improve and develop a broad line of PWR and BWR products. ABB's development and fuel follow-up activities are performed in close co-operation with its utility customers. This paper provides an overview of recent fuel performance and reliability experience at ABB. Selected development and validation activities for PWR and BWR fuel are presented, for which the ABB test facilities in Windsor (TF-2 loop, mechanical test laboratory) and Vaesteras (FRIGG, BURE) are essential. (authors)

  14. High performance data transfer

    Science.gov (United States)

    Cottrell, R.; Fang, C.; Hanushevsky, A.; Kreuger, W.; Yang, W.

    2017-10-01

    The exponentially increasing need for high speed data transfer is driven by big data, and cloud computing together with the needs of data intensive science, High Performance Computing (HPC), defense, the oil and gas industry etc. We report on the Zettar ZX software. This has been developed since 2013 to meet these growing needs by providing high performance data transfer and encryption in a scalable, balanced, easy to deploy and use way while minimizing power and space utilization. In collaboration with several commercial vendors, Proofs of Concept (PoC) consisting of clusters have been put together using off-the- shelf components to test the ZX scalability and ability to balance services using multiple cores, and links. The PoCs are based on SSD flash storage that is managed by a parallel file system. Each cluster occupies 4 rack units. Using the PoCs, between clusters we have achieved almost 200Gbps memory to memory over two 100Gbps links, and 70Gbps parallel file to parallel file with encryption over a 5000 mile 100Gbps link.

  15. Very high energy colliders

    International Nuclear Information System (INIS)

    Richter, B.

    1985-05-01

    The conclusions are relatively simple, but represent a considerable challenge to the machine builder. High luminosity is essential. We may in the future discover some new kind of high cross section physics, but all we know now indicates that the luminosity has to increase as the square of the center of mass energy. A reasonable luminosity to scale from for electron machines would be 10 33 cm -2 s -1 at a center of mass energy of 3 TeV. The required emittances in very high energy machines are small. It will be a real challenge to produce these small emittances and to maintain them during acceleration. The small emittances probably make acceleration by laser techniques easier, if such techniques will be practical at all. The beam spot sizes are very small indeed. It will be a challenge to design beam transport systems with the necessary freedom from aberration required for these small spot sizes. It would of course help if the beta functions at the collision points could be reduced. Beam power will be large - to paraphrase the old saying, ''power is money'' - and efficient acceleration systems will be required

  16. High-voltage picoamperemeter

    Energy Technology Data Exchange (ETDEWEB)

    Bugl, Andrea; Ball, Markus; Boehmer, Michael; Doerheim, Sverre; Hoenle, Andreas; Konorov, Igor [Technische Universitaet Muenchen, Garching (Germany); Ketzer, Bernhard [Technische Universitaet Muenchen, Garching (Germany); Helmholtz-Institut fuer Strahlen- und Kernphysik, Bonn (Germany)

    2014-07-01

    Current measurements in the nano- and picoampere region on high voltage are an important tool to understand charge transfer processes in micropattern gas detectors like the Gas Electron Multiplier (GEM). They are currently used to e.g. optimize the field configuration in a multi-GEM stack to be used in the ALICE TPC after the upgrade of the experiment during the 2nd long shutdown of the LHC. Devices which allow measurements down to 1pA at high voltage up to 6 kV have been developed at TU Muenchen. They are based on analog current measurements via the voltage drop over a switchable shunt. A microcontroller collects 128 digital ADC values and calculates their mean and standard deviation. This information is sent with a wireless transmitting unit to a computer and stored in a root file. A nearly unlimited number of devices can be operated simultaneously and read out by a single receiver. The results can also be displayed on a LCD directly at the device. Battery operation and the wireless readout are important to protect the user from any contact to high voltage. The principle of the device is explained, and systematic studies of their properties are shown.

  17. High altitude dermatology

    Directory of Open Access Journals (Sweden)

    G K Singh

    2017-01-01

    Full Text Available Approximately, 140 million people worldwide live permanently at high altitudes (HAs and approximately another 40 million people travel to HA area (HAA every year for reasons of occupation, sports or recreation. In India, whole of Ladakh region, part of Northwest Kashmir, Northern part of Sikkim and Tenga valley of Arunachal are considered inhabited areas of HAA. The low quantity of oxygen, high exposure of ultraviolet (UV light, very low humidity, extreme subzero temperature in winter, high wind velocity, make this region difficult for lowlanders as well as for tourists. Acute mountain sickness, HA pulmonary edema, HA cerebral edema, and thromboembolic conditions are known to occur in HA. However, enough knowledge has not been shared on dermatoses peculiar to this region. Xerosis, UV-related skin disorders (tanning, photomelanosis, acute and chronic sunburn, polymorphic light eruption, chronic actinic dermatitis, actinic cheilitis, etc., cold injuries (frostbite, chilblains, acrocyanosis, erythrocyanosis, etc. nail changes (koilonychias, airborne contact dermatitis, insect bite reaction, and skin carcinoma (basal cell carcinomas, squamous cell carcinomas, and also rarely malignant melanoma are the dermatoses seen in HAAs. Early diagnosis and knowledge of HA dermatoses may prevent serious consequences of disease and improve the quality of life for the visitors as well as for native of the place.

  18. High power coaxial ubitron

    Science.gov (United States)

    Balkcum, Adam J.

    In the ubitron, also known as the free electron laser, high power coherent radiation is generated from the interaction of an undulating electron beam with an electromagnetic signal and a static periodic magnetic wiggler field. These devices have experimentally produced high power spanning the microwave to x-ray regimes. Potential applications range from microwave radar to the study of solid state material properties. In this dissertation, the efficient production of high power microwaves (HPM) is investigated for a ubitron employing a coaxial circuit and wiggler. Designs for the particular applications of an advanced high gradient linear accelerator driver and a directed energy source are presented. The coaxial ubitron is inherently suited for the production of HPM. It utilizes an annular electron beam to drive the low loss, RF breakdown resistant TE01 mode of a large coaxial circuit. The device's large cross-sectional area greatly reduces RF wall heat loading and the current density loading at the cathode required to produce the moderate energy (500 keV) but high current (1-10 kA) annular electron beam. Focusing and wiggling of the beam is achieved using coaxial annular periodic permanent magnet (PPM) stacks without a solenoidal guide magnetic field. This wiggler configuration is compact, efficient and can propagate the multi-kiloampere electron beams required for many HPM applications. The coaxial PPM ubitron in a traveling wave amplifier, cavity oscillator and klystron configuration is investigated using linear theory and simulation codes. A condition for the dc electron beam stability in the coaxial wiggler is derived and verified using the 2-1/2 dimensional particle-in-cell code, MAGIC. New linear theories for the cavity start-oscillation current and gain in a klystron are derived. A self-consistent nonlinear theory for the ubitron-TWT and a new nonlinear theory for the ubitron oscillator are presented. These form the basis for simulation codes which, along

  19. High pressure effect for high-Tc superconductors

    International Nuclear Information System (INIS)

    Takahashi, Hiroki; Tomita, Takahiro

    2011-01-01

    A number of experimental and theoretical studies have been performed to understand the mechanism of high-T c superconductivity and to enhance T c . High-pressure techniques have played a very important role for these studies. In this paper, the high-pressure techniques and physical properties of high-T c superconductor under high pressure are presented. (author)

  20. Simulation study of HEMT structures with HfO{sub 2} cap layer for mitigating inverse piezoelectric effect related device failures

    Energy Technology Data Exchange (ETDEWEB)

    Nagulapally, Deepthi; Joshi, Ravi P., E-mail: rjoshi@odu.edu [Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, VA 23529-0246 (United States); Pradhan, Aswini [Department of Engineering and Center for Materials Research, Norfolk State University, 700 Park Avenue, Norfolk, VA 23504 (United States)

    2015-01-15

    The Inverse Piezoelectric Effect (IPE) is thought to contribute to possible device failure of GaN High Electron Mobility Transistors (HEMTs). Here we focus on a simulation study to probe the possible mitigation of the IPE by reducing the internal electric fields and related elastic energy through the use of high-k materials. Inclusion of a HfO{sub 2} “cap layer” above the AlGaN barrier particularly with a partial mesa structure is shown to have potential advantages. Simulations reveal even greater reductions in the internal electric fields by using “field plates” in concert with high-k oxides.