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Sample records for hgcdte electron injection

  1. Analysis of carrier concentration, lifetime, and electron mobility on p-type HgCdTe

    Science.gov (United States)

    Yoo, Sang Dong; Kwack, Kae Dal

    1998-03-01

    Minority carrier transport characteristics of vacancy-doped p-type HgCdTe such as carrier concentration, lifetime, and mobility are investigated. In the calculation of the carrier concentration two acceptor levels—a donor level and a trap level—were taken into account. The acceptor levels have been described by two models—two independent singly ionized levels and a divalent level with two ionization energies. When each model was examined by calculating electron mobility as a function of temperature, the latter was found to be more accurate. Electron mobility as a function of majority carrier concentration was also presented for both n-type and p-type HgCdTe with 0.225 Cd mole fraction. Steady state electron lifetime was computed assuming the acceptor levels and the trap level would act as Schokley-Read-Hall type recombination centers. The calculated results using the divalent acceptor model were in good agreement with the experimental data.

  2. Syringe-injectable electronics.

    Science.gov (United States)

    Liu, Jia; Fu, Tian-Ming; Cheng, Zengguang; Hong, Guosong; Zhou, Tao; Jin, Lihua; Duvvuri, Madhavi; Jiang, Zhe; Kruskal, Peter; Xie, Chong; Suo, Zhigang; Fang, Ying; Lieber, Charles M

    2015-07-01

    Seamless and minimally invasive three-dimensional interpenetration of electronics within artificial or natural structures could allow for continuous monitoring and manipulation of their properties. Flexible electronics provide a means for conforming electronics to non-planar surfaces, yet targeted delivery of flexible electronics to internal regions remains difficult. Here, we overcome this challenge by demonstrating the syringe injection (and subsequent unfolding) of sub-micrometre-thick, centimetre-scale macroporous mesh electronics through needles with a diameter as small as 100 μm. Our results show that electronic components can be injected into man-made and biological cavities, as well as dense gels and tissue, with >90% device yield. We demonstrate several applications of syringe-injectable electronics as a general approach for interpenetrating flexible electronics with three-dimensional structures, including (1) monitoring internal mechanical strains in polymer cavities, (2) tight integration and low chronic immunoreactivity with several distinct regions of the brain, and (3) in vivo multiplexed neural recording. Moreover, syringe injection enables the delivery of flexible electronics through a rigid shell, the delivery of large-volume flexible electronics that can fill internal cavities, and co-injection of electronics with other materials into host structures, opening up unique applications for flexible electronics.

  3. Syringe injectable electronics

    Science.gov (United States)

    Hong, Guosong; Zhou, Tao; Jin, Lihua; Duvvuri, Madhavi; Jiang, Zhe; Kruskal, Peter; Xie, Chong; Suo, Zhigang; Fang, Ying; Lieber, Charles M.

    2015-01-01

    Seamless and minimally-invasive three-dimensional (3D) interpenetration of electronics within artificial or natural structures could allow for continuous monitoring and manipulation of their properties. Flexible electronics provide a means for conforming electronics to non-planar surfaces, yet targeted delivery of flexible electronics to internal regions remains difficult. Here, we overcome this challenge by demonstrating syringe injection and subsequent unfolding of submicrometer-thick, centimeter-scale macroporous mesh electronics through needles with a diameter as small as 100 micrometers. Our results show that electronic components can be injected into man-made and biological cavities, as well as dense gels and tissue, with > 90% device yield. We demonstrate several applications of syringe injectable electronics as a general approach for interpenetrating flexible electronics with 3D structures, including (i) monitoring of internal mechanical strains in polymer cavities, (ii) tight integration and low chronic immunoreactivity with several distinct regions of the brain, and (iii) in vivo multiplexed neural recording. Moreover, syringe injection enables delivery of flexible electronics through a rigid shell, delivery of large volume flexible electronics that can fill internal cavities and co-injection of electronics with other materials into host structures, opening up unique applications for flexible electronics. PMID:26053995

  4. Parametric injection for monoenergetic electron acceleration

    Energy Technology Data Exchange (ETDEWEB)

    Oguchi, A; Takano, K; Hotta, E; Nemoto, K [Department of Energy Sciences Tokyo Institute of Technology 4259 Nagatsuta-cho Midori-ku Yokohama 226-8502 Japan (Japan); Zhidkov, A [Central Research Instistute of Electric Power Industry 2-6-1 Nagasaka Yokosuka Kanagawa 240-0196 Japan (Japan); Nakajima, K [High Energy Accelerator Research Organization, KEK 1-1 Oho Tsukuba Ibaraki 305-0801 Japan (Japan)], E-mail: blue-ayu@plasma.es.titech.ac.jp

    2008-05-01

    Electrons are accelerated in the laser wakefield (LWFA). This mechanism has been studied by 2D or 3D Particle In Cell simulation. However, how the electrons are injected in the wakefield is not understood. In this paper, we consider about the process of self -injection and propose new scheme. When plasma electron density modulates, parametric resonance of electron momentum is induced. The parametric resonance depends on laser waist modulation. We carried out 2D PIC simulation with the initial condition decided from resonance condition. Moreover, we analyze experimental result that generated 200-250 MeV monoenergetic electron beam with 400TW intense laser in CAEP in China.

  5. Electron kinetics in capacitively coupled plasmas modulated by electron injection

    Science.gov (United States)

    Zhang, Ya; Peng, Yanli; Innocenti, Maria Elena; Jiang, Wei; Wang, Hong-yu; Lapenta, Giovanni

    2017-09-01

    The controlling effect of an electron injection on the electron energy distribution function (EEDF) and on the energetic electron flux, in a capacitive radio-frequency argon plasma, is studied using a one-dimensional particle-in-cell/Monte Carlo collisions model. The input power of the electron beam is as small as several tens of Watts with laboratory achievable emission currents and energies. With the electron injection, the electron temperature decreases but with a significant high energy tail. The electron density, electron temperature in the sheath, and electron heating rate increase with the increasing emission energy. This is attributed to the extra heating of the energetic electrons in the EEDF tail. The non-equilibrium EEDF is obtained for strong non-local distributions of the electric field, electron heating rate, excitation, and ionization rate, indicating the discharge has transited from a volume heating (α-mode dominated) into a sheath heating (γ-mode dominated) type. In addition, the electron injection not only modifies the self-bias voltage, but also enhances the electron flux that can reach the electrodes. Moreover, the relative population of energetic electrons significantly increases with the electron injection compared to that without the electron injection, relevant for modifying the gas and surface chemistry reactions.

  6. DRIFT EFFECTS IN HGCDTE DETECTORS

    Directory of Open Access Journals (Sweden)

    B. PAVAN KUMAR

    2013-08-01

    Full Text Available The characteristics of temporal drift in spectral responsivity of HgCdTe photodetectors is investigated and found to have an origin different from what has been reported in literature. Traditionally, the literature attributes the cause of drift due to the deposition of thin film of ice water on the active area of the cold detector. The source of drift as proposed in this paper is more critical owing to the difficulties in acquisition of infrared temperature measurements. A model explaining the drift phenomenon in HgCdTe detectors is described by considering the deep trapping of charge carriers and generation of radiation induced deep trap centers which are meta-stable in nature. A theoretical model is fitted to the experimental data. A comparison of the model with the experimental data shows that the radiation induced deep trap centers and charge trapping effects are mainly responsible for the drift phenomenon observed in HgCdTe detectors.

  7. Low-Roughness Plasma Etching of HgCdTe Masked with Patterned Silicon Dioxide

    Science.gov (United States)

    Ye, Z. H.; Hu, W. D.; Yin, W. T.; Huang, J.; Lin, C.; Hu, X. N.; Ding, R. J.; Chen, X. S.; Lu, W.; He, L.

    2011-08-01

    A novel mask technique utilizing patterned silicon dioxide films has been exploited to perform mesa etching for device delineation and electrical isolation of HgCdTe third-generation infrared focal-plane arrays (IRFPAs). High-density silicon dioxide films were deposited at temperature of 80°C, and a procedure for patterning and etching of HgCdTe was developed by standard photolithography and wet chemical etching. Scanning electron microscopy (SEM) showed that the surfaces of inductively coupled plasma (ICP) etched samples were quite clean and smooth. Root-mean-square (RMS) roughness characterized by atomic force microscopy (AFM) was less than 1.5 nm. The etching selectivity between a silicon dioxide film and HgCdTe in the samples masked with patterned silicon dioxide films was greater than 30:1. These results show that the new masking technique is readily available and promising for HgCdTe mesa etching.

  8. REAL TIME FUEL INJECTION IN SI ENGINE USING ELECTRONIC INSTRUMENTATION

    Directory of Open Access Journals (Sweden)

    V. VINOTH KUMAR, M.E

    2012-05-01

    Full Text Available To meet the present stringent emission norms. These systems are enerally termed as Electronic Fuel Injection (EFI systems. The fuel is injected into the throttle body or into the inlet manifold through an electronic fuel injector, which is controlled by an Electronic Control Unit (ECU. The quantity of fuel injected by the injector plays a vital role as far as performance and emission characteristics of spark ignition engines are concerned. This paper deals with the static and dynamic fuel injection characteristics of two gasoline fuelinjectors. The effect of different injection parameters like fuel injection pressure, injection duration, supply voltage to injector and engine speed on the quantity of fuel injected have been studied for two injectors. The injection dead time and its variation with respect to fuel pressure and supply voltage to injector have beenanalyzed. Based on the analysis of results, an empirical formula has been obtained to determine the dynamic fuel injection quantity from the static fuel injection characteristics and it was compared with the measured values. It is found that the empirical formula developed in this work gives reasonably good results and therefore, it can be used with confidence for predicting the dynamic characteristics of any given injector from its static injection characteristics.

  9. Giant tunnel-electron injection in nitrogen-doped graphene

    DEFF Research Database (Denmark)

    Lagoute, Jerome; Joucken, Frederic; Repain, Vincent

    2015-01-01

    Scanning tunneling microscopy experiments have been performed to measure the local electron injection in nitrogen-doped graphene on SiC(000) and were successfully compared to ab initio calculations. In graphene, a gaplike feature is measured around the Fermi level due to a phonon-mediated tunneling...... and at carbon sites. Nitrogen doping can therefore be proposed as a way to improve tunnel-electron injection in graphene....

  10. Cosmic-ray electron injection from the ionization of nuclei

    CERN Document Server

    Morlino, G

    2009-01-01

    We show that the secondary electrons ejected from the ionization of heavy ions can be injected into the acceleration process that occurs at supernova remnant shocks. This electron injection mechanism works since ions are ionized during the acceleration when they move already with relativistic speed, just like ejected electrons do. Using the abundances of heavy nuclei measured in cosmic rays at Earth, we estimate the electron/proton ratio at the source to be ~10^-4, big enough to account for the nonthermal synchrotron emission observed in young SNRs. We also show that the ionization process can limit the maximum energy that heavy ions can reach.

  11. Cosmic-ray electron injection from the ionization of nuclei.

    Science.gov (United States)

    Morlino, Giovanni

    2009-09-18

    We show that the secondary electrons ejected from the ionization of heavy ions can be injected into the acceleration process that occurs at supernova remnant shocks. This electron injection mechanism works since ions are ionized during the acceleration when they move already with relativistic speed, just like ejected electrons do. Using the abundances of heavy nuclei measured in cosmic rays measured at the Earth, we estimate the electron/proton ratio at the source to be approximately 10;{-4}, big enough to account for the nonthermal synchrotron emission observed in young supernova remnants. We also show that the ionization process can limit the maximum energy that heavy ions can reach.

  12. Acceleration of injected electrons by the plasma beat wave accelerator

    Science.gov (United States)

    Joshi, C.; Clayton, C. E.; Marsh, K. A.; Dyson, A.; Everett, M.; Lal, A.; Leemans, W. P.; Williams, R.; Katsouleas, T.; Mori, W. B.

    1992-07-01

    In this paper we describe the recent work at UCLA on the acceleration of externally injected electrons by a relativistic plasma wave. A two frequency laser was used to excite a plasma wave over a narrow range of static gas pressures close to resonance. Electrons with energies up to our detection limit of 9.1 MeV were observed when 2.1 MeV electrons were injected in the plasma wave. No accelerated electrons above the detection threshold were observed when the laser was operated on a single frequency or when no electrons were injected. Experimental results are compared with theoretical predictions, and future prospects for the plasma beat wave accelerator are discussed.

  13. Electron bunch injection at an angle into a laser wakefield

    CERN Document Server

    Luttikhof, M J H; Van Goor, F A; Boller, K -J

    2008-01-01

    External injection of electron bunches longer than the plasma wavelength in a laser wakefield accelerator can lead to the generation of femtosecond ultrarelativistic bunches with a couple of percent energy spread. Extensive study has been done on external electron bunch (e.g. one generated by a photo-cathode rf linac) injection in a laser wakefield for different configurations. In this paper we investigate a new way of external injection where the electron bunch is injected at a small angle into the wakefield. This way one can avoid the ponderomotive scattering as well as the vacuum-plasma transition region, which tend to destroy the injected bunch. In our simulations, the effect of the laser pulse dynamics is also taken into account. It is shown that injection at an angle can provide compressed and accelerated electron bunches with less than 2% energy spread. Another advantage of this scheme is that it has less stringent requirements in terms of the size of the injected bunch and there is the potential to tr...

  14. Controlled electron injection using nanoparticles in laser wakefield acceleration

    Science.gov (United States)

    Cho, Myung Hoon; Pathak, Vishwa Bandhu; Kim, Hyung Taek; Nakajima, Kazuhisa; Nam, Chang Hee; CenterRelativistic Laser Science Team

    2016-10-01

    Laser wakefield acceleration is one of compact electron acceleration schemes due to its high accelerating gradient. Despite of the great progress of several GeV electron beams with high power lasers, the electron injection to the wakefield is still a critical issue for a very low density plasma 1017 electrons/cc. In this talk a novel method to control the injection using nanoparticles is proposed. We investigate the electron injection by analyzing the interaction of electrons with the two potentials - one created by a nanoparticle and the other by the wakefield. The nanoparticle creates a localized electric potential and this nanoparticle potential just slips the present wake potential. To confirm the Hamiltonian description of the interaction, a test particle calculation is performed by controlling the bubble and the nanoparticle potentials. A multi-dimensional particle-in-cell simulations are also presented as a proof-of-principle. Comparing theoretical estimates and PIC simulation, we suggest nanoparticle parameters of size and electron density depending on the background plasma density. Our scheme can be applicable for low plasma density to break though the limitation of self-injection toward extremely high energy electron energy.

  15. Electron bunch injection at an angle into a laser wakefield

    NARCIS (Netherlands)

    Luttikhof, M.J.H.; Khachatryan, A.G.; van Goor, F.A.; Boller, Klaus J.; Mora, P.

    2009-01-01

    External injection of electron bunches longer than the plasma wavelength in a laser wakefield accelerator can lead to the generation of femtosecond ultra relativistic bunches with a couple of percent energy spread. Extensive study has been done on external electron bunch (e.g., one generated by a

  16. Electron beam injection during active experiments. I - Electromagnetic wave emissions

    Science.gov (United States)

    Winglee, R. M.; Kellogg, P. J.

    1990-01-01

    The wave emissions produced in Echo 7 experiment by active injections of electron beams were investigated to determine the properties of the electromagnetic and electrostatic fields for both the field-aligned and cross-field injection in such experiments and to evaluate the sources of free energy and relative efficiencies for the generation of the VLF and HF emissions. It is shown that, for typical beam energies in active experiments, electromagnetic effects do not substantially change the bulk properties of the beam, spacecraft charging, and plasma particle acceleration. Through simulations, beam-generated whistlers; fundamental z-mode and harmonic x-mode radiation; and electrostatic electron-cyclotron, upper-hybrid, Langmuir, and lower-hybrid waves were identified. The characteristics of the observed wave spectra were found to be sensitive to both the ratio of the electron plasma frequency to the cyclotron frequency and the angle of injection relative to the magnetic field.

  17. Investigation of Substrate Effects on Interface Strain and Defect Generation in MBE-Grown HgCdTe

    Science.gov (United States)

    Gu, R.; Lei, W.; Antoszewski, J.; Faraone, L.

    2016-09-01

    Si, Ge, and GaAs have been extensively investigated as alternative substrates for molecular-beam epitaxy (MBE) growth of HgCdTe and, at present, are widely used for HgCdTe-based infrared focal-plane arrays. However, the problem of high dislocation density in HgCdTe layers grown on these lattice-mismatched substrates has yet to be resolved. In this work, we investigated another alternative substrate, GaSb, which has a significantly smaller lattice mismatch with HgCdTe in comparison with Si, Ge, and GaAs, and is readily available as large-area, epiready wafers at much lower cost in comparison with lattice-matched CdZnTe substrates. The resultant stress due to lattice and thermal mismatch between the HgCdTe epilayer and various substrates has been calculated in this work using the elasticity matrix, and the corresponding stress distribution simulated using ANSYS. The simulated structures were matched by experimental samples involving MBE growth of HgCdTe on GaAs, GaSb, and CdZnTe substrates, and were characterized via reflection high-energy electron diffraction and x-ray diffraction analysis, followed by etch pit density (EPD) analysis. In comparison with other alternative substrates, GaSb is shown to have lower interface stress and lower EPD, rendering it an interesting and promising alternative substrate material for HgCdTe epitaxy.

  18. Influence of photoresist feature geometry on ECR plasma-etched HgCdTe trenches

    Science.gov (United States)

    Benson, J. David; Stoltz, Andrew J., Jr.; Kaleczyc, Andrew W.; Martinka, Mike; Almeida, Leo A.; Boyd, Phillip R.; Dinan, John H.

    2002-12-01

    Factors that affect width and aspect ratio in electron cyclotron resonance (ECR) etched HgCdTe trenches are investigated. The ECR etch bias and anisotropy are determined by photoresist feature erosion rate. The physical characteristics of the trenches are attributed to ECR plasma etch chemistry.

  19. HgCdTe barrier infrared detectors

    Science.gov (United States)

    Kopytko, M.; Rogalski, A.

    2016-05-01

    In the last decade, new strategies to achieve high-operating temperature (HOT) detectors have been proposed, including barrier structures such as nBn devices, unipolar barrier photodiodes, and multistage (cascade) infrared detectors. The ability to tune the positions of the conduction and valence band edges independently in a broken-gap type-II superlattices is especially helpful in the design of unipolar barriers. This idea has been also implemented in HgCdTe ternary material system. However, the implementation of this detector structure in HgCdTe material system is not straightforward due to the existence of a valence band discontinuity (barrier) at the absorber-barrier interface. In this paper we present status of HgCdTe barrier detectors with emphasis on technological progress in fabrication of MOCVD-grown HgCdTe barrier detectors achieved recently at the Institute of Applied Physics, Military University of Technology. Their performance is comparable with state-of-the-art of HgCdTe photodiodes. From the perspective of device fabrication their important technological advantage results from less stringent surface passivation requirements and tolerance to threading dislocations.

  20. Multifunctional bulk plasma source based on discharge with electron injection

    Energy Technology Data Exchange (ETDEWEB)

    Klimov, A. S.; Medovnik, A. V. [Tomsk State University of Control Systems and Radioelectronics, Tomsk 634050 (Russian Federation); Tyunkov, A. V. [Tomsk State University of Control Systems and Radioelectronics, Tomsk 634050 (Russian Federation); Institute of High Current Electronics, Tomsk 634055 (Russian Federation); Savkin, K. P.; Shandrikov, M. V.; Vizir, A. V. [Institute of High Current Electronics, Tomsk 634055 (Russian Federation)

    2013-01-15

    A bulk plasma source, based on a high-current dc glow discharge with electron injection, is described. Electron injection and some special design features of the plasma arc emitter provide a plasma source with very long periods between maintenance down-times and a long overall lifetime. The source uses a sectioned sputter-electrode array with six individual sputter targets, each of which can be independently biased. This discharge assembly configuration provides multifunctional operation, including plasma generation from different gases (argon, nitrogen, oxygen, acetylene) and deposition of composite metal nitride and oxide coatings.

  1. Electron injection dynamics in high-potential porphyrin photoanodes.

    Science.gov (United States)

    Milot, Rebecca L; Schmuttenmaer, Charles A

    2015-05-19

    There is a growing need to utilize carbon neutral energy sources, and it is well known that solar energy can easily satisfy all of humanity's requirements. In order to make solar energy a viable alternative to fossil fuels, the problem of intermittency must be solved. Batteries and supercapacitors are an area of active research, but they currently have relatively low energy-to-mass storage capacity. An alternative and very promising possibility is to store energy in chemical bonds, or make a solar fuel. The process of making solar fuel is not new, since photosynthesis has been occurring on earth for about 3 billion years. In order to produce any fuel, protons and electrons must be harvested from a species in its oxidized form. Photosynthesis uses the only viable source of electrons and protons on the scale needed for global energy demands: water. Because artificial photosynthesis is a lofty goal, water oxidation, which is a crucial step in the process, has been the initial focus. This Account provides an overview of how terahertz spectroscopy is used to study electron injection, highlights trends from previously published reports, and concludes with a future outlook. It begins by exploring similarities and differences between dye-sensitized solar cells (DSSCs) for producing electricity and a putative device for splitting water and producing a solar fuel. It then identifies two important problems encountered when adapting DSSC technology to water oxidation-improper energy matching between sensitizer energy levels with the potential for water oxidation and the instability of common anchoring groups in water-and discusses steps to address them. Emphasis is placed on electron injection from sensitizers to metal oxides because this process is the initial step in charge transport. Both the rate and efficiency of electron injection are analyzed on a sub-picosecond time scale using time-resolved terahertz spectroscopy (TRTS). Bio-inspired pentafluorophenyl porphyrins are

  2. MODELING OF ELECTRONIC GASOLINE INJECTION PROCESSES IN TWO STROKE ENGINE

    Directory of Open Access Journals (Sweden)

    Hraivoronskyi, Y.

    2013-06-01

    Full Text Available Basic provision of the processes developed mode, occurring in ignition fuel system with electronically controlled two stroke engine with positive ignition are given. Fuel injection process’ calculation results for the case of placing fuel injector into intake system presented.

  3. Conceptual study of electron ripple injection for tokamak transport control

    Energy Technology Data Exchange (ETDEWEB)

    Choe, W.; Ono, M. [Princeton Univ., NJ (United States). Plasma Physics Lab.; Chang, C.S. [New York Univ., NY (United States). Courant Inst. of Mathematical Sciences

    1995-08-01

    A non-intrusive method for inducing radial electric field based on electron ripple injection is under development by the Princeton CDX-U group. The radial electric field is known to play an important role in the L-H and H-VH mode transition according to the recent theoretical and experimental research. It is therefore important to develop a non-intrusive tool to control the radial electric field profile in tokamak plasmas. The present technique utilizes externally-applied local magnetic ripple fields to trap electrons at the edge, allowing them to penetrate towards the plasma center via {gradient}B and curvature drifts, causing the flux surfaces to charge up negatively. Electron cyclotron resonance heating is utilized to increase the trapped population and the electron drift velocity by raising the perpendicular energy of trapped electrons. In order to quantify the effects of cyclotron resonance heating on electrons, the temperature anisotropy of resonant electrons in a tokamak plasma is calculated. For the calculation of anisotropic temperatures, energy moments of the bounce-averaged Fokker-Planck equation with a bi-Maxwellian distribution function for heated electrons are solved, assuming a moderate wave power and a constant quasilinear diffusion coefficient. Simulation using a guiding-center orbit model have been performed to understand the behavior of suprathermal electrons in the presence of ripple fields. Examples for CDX-U and ITER parameters are given.

  4. Temperature-driven massless Kane fermions in HgCdTe crystals

    Science.gov (United States)

    Teppe, F.; Marcinkiewicz, M.; Krishtopenko, S. S.; Ruffenach, S.; Consejo, C.; Kadykov, A. M.; Desrat, W.; But, D.; Knap, W.; Ludwig, J.; Moon, S.; Smirnov, D.; Orlita, M.; Jiang, Z.; Morozov, S. V.; Gavrilenko, V. I.; Mikhailov, N. N.; Dvoretskii, S. A.

    2016-08-01

    It has recently been shown that electronic states in bulk gapless HgCdTe offer another realization of pseudo-relativistic three-dimensional particles in condensed matter systems. These single valley relativistic states, massless Kane fermions, cannot be described by any other relativistic particles. Furthermore, the HgCdTe band structure can be continuously tailored by modifying cadmium content or temperature. At critical concentration or temperature, the bandgap collapses as the system undergoes a semimetal-to-semiconductor topological phase transition between the inverted and normal alignments. Here, using far-infrared magneto-spectroscopy we explore the continuous evolution of band structure of bulk HgCdTe as temperature is tuned across the topological phase transition. We demonstrate that the rest mass of Kane fermions changes sign at critical temperature, whereas their velocity remains constant. The velocity universal value of (1.07+/-0.05) × 106 m s-1 remains valid in a broad range of temperatures and Cd concentrations, indicating a striking universality of the pseudo-relativistic description of the Kane fermions in HgCdTe.

  5. Hydrodynamic injection on electrophoresis microchips using an electronic micropipette.

    Science.gov (United States)

    Gabriel, Ellen F M; Dos Santos, Rodrigo A; Lobo-Júnior, Eulício O; Rezende, Kariolanda C A; Coltro, Wendell K T

    2017-01-01

    Here we report for the first time the use of an electronic micropipette as hydrodynamic (HD) injector for microchip electrophoresis (ME) devices. The micropipette was directly coupled to a PDMS device, which had been fabricated in a simple cross format with two auxiliary channels for sample volume splitting. Sample flow during the injection procedure was controlled in automatic dispenser mode using a volume of 0.6µL. Channel width and device configuration were optimized and the best results were achieved using a simple cross layout containing two auxiliary channels with 300µm width for sample splitting. The performance of the HD injector was evaluated using a model mixture of high-mobility cationic species. The results obtained were compared to the data obtained via electrokinetic (EK) injection. Overall, the HD provided better analytical performance in terms of resolution and injection-to-injection repeatability. The relative standard deviation (RSD) values for peak intensities were lower than 5% (n=10) when the micropipette was employed. In comparison with EK injection, the use of the proposed HD injector revealed an unbiased profile for a mixture containing K(+) and Li(+)(300 µmol L(-1) each) over various buffer concentrations. For EK injection, the peak areas decreased from 2.92 ± 0.20-0.72 ± 0.14Vs for K(+) and from 1.30 ± 0.10-0.38 ± 0.10Vs for Li(+) when the running buffer increased from 20 to 50mmolL(-1). For HD injection, the peak areas for K(+) and Li(+) exhibited average values of 2.48±0.07 and 2.10±0.06Vs, respectively. The limits of detection (LDs) for K(+), Na(+) and Li(+) ranged from 18 to 23µmolL(-1). HD injection through an electronic micropipette allows to automatically dispense a bias-free amount of sample inside microchannels with acceptable repeatability. The proposed approach also exhibited instrumental simplicity, portability and minimal microfabrication requirements.

  6. Influence of pre-injection control parameters on main-injection fuel quantity for an electronically controlled double-valve fuel injection system of diesel engine

    Science.gov (United States)

    Song, Enzhe; Fan, Liyun; Chen, Chao; Dong, Quan; Ma, Xiuzhen; Bai, Yun

    2013-09-01

    A simulation model of an electronically controlled two solenoid valve fuel injection system for a diesel engine is established in the AMESim environment. The accuracy of the model is validated through comparison with experimental data. The influence of pre-injection control parameters on main-injection quantity under different control modes is analyzed. In the spill control valve mode, main-injection fuel quantity decreases gradually and then reaches a stable level because of the increase in multi-injection dwell time. In the needle control valve mode, main-injection fuel quantity increases with rising multi-injection dwell time; this effect becomes more obvious at high-speed revolutions and large main-injection pulse widths. Pre-injection pulse width has no obvious influence on main-injection quantity under the two control modes; the variation in main-injection quantity is in the range of 1 mm3.

  7. Electron ripple injection concept for tokamak transport control

    Science.gov (United States)

    Choe, W.; Ono, M.; Chang, C. S.

    1996-02-01

    A non-intrusive method for inducing a radial electric field (Er) based on electron ripple injection (ERI) is under development by the Princeton CDX-U group. Since Er is known to play an important role in the L-H and H-VH mode transition, it is therefore important to develop a non-intrusive tool to control the Er profile in tokamak plasmas. The present technique utilizes externally-applied local magnetic ripple fields to trap electrons at the edge, allowing them to penetrate towards the plasma center via ∇B and curvature drifts, causing the flux surfaces to charge up negatively. Electron cyclotron resonance heating (ECRH) is utilized to increase the trapped population and the electron drift velocity by raising the perpendicular energy of trapped electrons. The temperature anisotropy of resonant electrons in a tokamak plasma is calculated in order to investigate effects of ECRH on electrons. Simulations using a guiding-center orbit model have been performed to understand the behavior of suprathermal electrons in the presence of ripple fields. Examples for CDX-U and ITER are given.

  8. Externally Controlled Injection of Electrons by a Laser Pulse in a Laser Wakefield Electron Accelerator

    CERN Document Server

    Chen Szu Yuan; Chen Wei Ting; Chien, Ting-Yei; Lee, Chau-Hwang; Lin, Jiunn-Yuan; Wang, Jyhpyng

    2005-01-01

    Spatially and temporally localized injection of electrons is a key element for development of plasma-wave electron accelerator. Here we report the demonstration of two different schemes for electron injection in a self-modulated laser wakefield accelerator (SM-LWFA) by using a laser pulse. In the first scheme, by implementing a copropagating laser prepulse with proper timing, we are able to control the growth of Raman forward scattering and the production of accelerated electrons. We found that the stimulated Raman backward scattering of the prepulse plays the essential role of injecting hot electrons into the fast plasma wave driven by the pump pulse. In the second scheme, by using a transient density ramp we achieve self-injection of electrons in a SM-LWFA with spatial localization. The transient density ramp is produced by a prepulse propagating transversely to drill a density depression channel via ionization and expansion. The same mechanism of injection with comparable efficiency is also demonstrated wi...

  9. Acceleration of injected electron beam by ultra-intense laser pulses with phase disturbances

    CERN Document Server

    Nakamura, T; Kato, S; Tanimoto, M; Koyama, K; Koga, J

    2003-01-01

    Acceleration of an injected electron beam by ultra-intense laser pulses with phase disturbances is investigated. The energy gain of the beam electrons depends on the initial energy of the injected electrons in the stochastic acceleration process. The effect is larger for electrons with some injection energy as opposed to electrons with no initial energy. The corresponding accelerating field for electrons having certain amounts of initial energy becomes larger than that of the standard wakefield. (author)

  10. Enhanced electronic injection in organic light-emitting diodes by incorporating silver nanoclusters and cesium carbonate

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Ying-Chung; Gao, Chia-Yuan [Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chen, Kan-Lin [Department of Electronic Engineering, Fortune Institute of Technology, Kaohsiung, Taiwan (China); Sze, Po-Wen [Department of Electro-Optical Science and Engineering, Kao Yuan University, Kaohsiung, Taiwan (China); Huang, Chien-Jung, E-mail: chien@nuk.edu.tw [Department of Applied Physics, National University of Kaohsiung, Kaohsiung, Taiwan (China)

    2015-10-01

    Highlights: • The localized electric field around SNCs is enhanced. • When the cesium carbonate/silver nanoclusters/cesium carbonate electron-injection structure replaces the cesium carbonate electron-injection structure, higher electron-injection ability is obtained. • The structure for efficient electron injection is critical to characteristics of the device. - Abstract: The influence of the cesium carbonate/silver nanoclusters/cesium carbonate electron-injection structure (CSC-EIS) on the performance of organic light-emitting diodes is investigated in this study. The silver nanoclusters (SNCs) are introduced between the electron-injection layers by means of thermal evaporation. When the CSC-EIS replaces the cesium carbonate electron-injection structure, higher electron-injection ability is obtained because the electron-injection barrier between the cathode and the electron-transport layer is remarkably reduced from 1.2 to 0 eV. In addition, surface plasmon resonance effect will cause the enhanced localized electric field around the SNCs, resulting that electron-injection ability is further enhanced from the cathode to the emitting layer.

  11. Linear Mode HgCdTe Avalanche Photodiodes for Photon Counting Applications

    Science.gov (United States)

    Sullivan, William, III; Beck, Jeffrey; Scritchfield, Richard; Skokan, Mark; Mitra, Pradip; Sun, Xiaoli; Abshire, James; Carpenter, Darren; Lane, Barry

    2015-01-01

    An overview of recent improvements in the understanding and maturity of linear mode photon counting with HgCdTe electron-initiated avalanche photodiodes is presented. The first HgCdTe LMPC 2x8 format array fabricated in 2011 with 64 micron pitch was a remarkable success in terms of demonstrating a high single photon signal to noise ratio of 13.7 with an excess noise factor of 1.3-1.4, a 7 ns minimum time between events, and a broad spectral response extending from 0.4 micron to 4.2 micron. The main limitations were a greater than 10x higher false event rate than expected of greater than 1 MHz, a 5-7x lower than expected APD gain, and a photon detection efficiency of only 50% when greater than 60% was expected. This paper discusses the reasons behind these limitations and the implementation of their mitigations with new results.

  12. Structural and electronic implications for carrier injection into organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Castellani, Mauro [Universitaet Potsdam, Institut fuer Physik und Astronomie, Potsdam-Golm (Germany); Salzmann, Ingo; Yu, Shuwen; Koch, Norbert [Humboldt-Universitaet zu Berlin, Institut fuer Physik, Berlin (Germany); Bugnon, Philippe [Ecole Polytechnique Federale de Lausanne (Switzerland). Institut des Materiaux; Oehzelt, Martin [Johannes Kepler Universitaet Linz (Austria). Institut fuer Experimentalphysik

    2009-10-15

    We report on the structural and electronic interface formation between ITO (indium-tin-oxide) and prototypical organic small molecular semiconductors, i.e., CuPc (copper phthalocyanine) and {alpha}-NPD (N,N'-di(naphtalen-1-yl)-N,N'-diphenyl-benzidine). In particular, the effects of in situ oxygen plasma pretreatment of the ITO surface on interface properties are examined in detail: Organic layer-thickness dependent Kelvin probe measurements revealed a good alignment of the ITO work function and the highest occupied electronic level of the organic material in all samples. In contrast, the electrical properties of hole-only and bipolar organic diodes depend strongly on the treatment of ITO prior to organic deposition. This dependence is more pronounced for diodes made of polycrystalline CuPc than for those of amorphous {alpha}-NPD layers. X-ray diffraction and atomic force microscopic (AFM) investigations of CuPc nucleation and growth evidenced a more pronounced texture of the polycrystalline film structure on the ITO substrate that was oxygen plasma treated prior to organic layer deposition. These findings suggest that the anisotropic electrical properties of CuPc crystallites, and their orientation with respect to the substrate, strongly affect the charge carrier injection and transport properties at the anode interface. (orig.)

  13. An investigation for the HgCdTe cleaning process

    Science.gov (United States)

    Lan, Tian-Yi; Wang, Nili; Zhao, Shuiping; Liu, Shi-Jia; Li, Xiang-Yang

    2014-11-01

    A new cleaning process for HgCdTe was designed - which used the improved SC-1,SC-2 and Br2- C2H5OH solutions as the main cleaning fluid and applied mega sound waves in the cleaning process. By analyzing the test results carried out on the HgCdTe surface, it was found that the material of HgCdTe for the application of new cleaning process was better than the one for the application of conventional cleaning process in the minority carrier lifetime, residual organic contamination, responsivity and specific detectivity.

  14. Single-Photon-Sensitive HgCdTe Avalanche Photodiode Detector

    Science.gov (United States)

    Huntington, Andrew

    2013-01-01

    The purpose of this program was to develop single-photon-sensitive short-wavelength infrared (SWIR) and mid-wavelength infrared (MWIR) avalanche photodiode (APD) receivers based on linear-mode HgCdTe APDs, for application by NASA in light detection and ranging (lidar) sensors. Linear-mode photon-counting APDs are desired for lidar because they have a shorter pixel dead time than Geiger APDs, and can detect sequential pulse returns from multiple objects that are closely spaced in range. Linear-mode APDs can also measure photon number, which Geiger APDs cannot, adding an extra dimension to lidar scene data for multi-photon returns. High-gain APDs with low multiplication noise are required for efficient linear-mode detection of single photons because of APD gain statistics -- a low-excess-noise APD will generate detectible current pulses from single photon input at a much higher rate of occurrence than will a noisy APD operated at the same average gain. MWIR and LWIR electron-avalanche HgCdTe APDs have been shown to operate in linear mode at high average avalanche gain (M > 1000) without excess multiplication noise (F = 1), and are therefore very good candidates for linear-mode photon counting. However, detectors fashioned from these narrow-bandgap alloys require aggressive cooling to control thermal dark current. Wider-bandgap SWIR HgCdTe APDs were investigated in this program as a strategy to reduce detector cooling requirements.

  15. Recent progress in the doping of MBE HgCdTe

    Science.gov (United States)

    Sivananthan, Sivalingam; Wijewarnasuriya, P. S.; Faurie, Jean-Pierre

    1995-09-01

    We present a review of the recent progress in the doping of HgCdTe grown by molecular beam epitaxy. A detailed analysis of the unintentional/intrinsic, n-type, and p-type doping is presented. Our results show that CdZnTe substrates should be carefully screened to reduce the out-diffusion of impurities from the substrate. N-type HgCdTe layers exhibit excellent Hall characteristics down to indium levels of 2 X 10(superscript 15) cm(superscript -3). Electron mobilities in the range of (2 - 3) X 10(superscript 5) cm(superscript 2)/vs at 23 K were obtained. Measured lifetime data fits very well with the intrinsic band-to-band recombination. However, below 2 X 10(superscript 15) cm(superscript -3) doping levels, minority carrier lifetime is limited by Schockley-Reed recombination. We have implemented planar doping with arsenic as p-type dopant during MBE growth. Our results clearly indicate that arsenic incorporates as an acceptor dopant during the growth of MBE HgCdTe.

  16. Prompt enhancement of the Earth's outer radiation belt due to substorm electron injections

    Science.gov (United States)

    Tang, C. L.; Zhang, J.-C.; Reeves, G. D.; Su, Z. P.; Baker, D. N.; Spence, H. E.; Funsten, H. O.; Blake, J. B.; Wygant, J. R.

    2016-12-01

    We present multipoint simultaneous observations of the near-Earth magnetotail and outer radiation belt during the substorm electron injection event on 16 August 2013. Time History of Events and Macroscale Interactions during Substorms A in the near-Earth magnetotail observed flux-enhanced electrons of 300 keV during the magnetic field dipolarization. Geosynchronous orbit satellites also observed the intensive electron injections. Located in the outer radiation belt, RBSP-A observed enhancements of MeV electrons accompanied by substorm dipolarization. The phase space density (PSD) of MeV electrons at L* 5.4 increased by 1 order of magnitude in 1 h, resulting in a local PSD peak of MeV electrons, which was caused by the direct effect of substorm injections. Enhanced MeV electrons in the heart of the outer radiation belt were also detected within 2 h, which may be associated with intensive substorm electron injections and subsequent local acceleration by chorus waves. Multipoint observations have shown that substorm electron injections not only can be the external source of MeV electrons at the outer edge of the outer radiation belt (L* 5.4) but also can provide the intensive seed populations in the outer radiation belt. These initial higher-energy electrons from injection can reach relativistic energy much faster. The observations also provide evidence that enhanced substorm electron injections can explain rapid enhancements of MeV electrons in the outer radiation belt.

  17. Molecular beam epitaxy of CdTe and HgCdTe on large-area Si(100)

    Science.gov (United States)

    Sporken, R.; Lange, M. D.; Faurie, Jean-Pierre

    1991-09-01

    The current status of molecular beam epitaxy (MBE) of CdTe and HgCdTe on Si(100) is reviewed. CdTe and HgCdTe grow in the (111)B orientation on Si(100); monocrystalline films with two domains are obtained on most nominal Si(100) substrates, single domain films are grown on misoriented substrates and on nominal Si(100) preheated to 900-950 degree(s)C. Double-crystal x-ray rocking curves (DCRCs) with full-width at half-maximum (FWHM) as low as 110 arcsec are reported for HgCdTe on silicon; these layers are n-type, and electron mobilities higher than 5 X 104 cm2V-2s-1 are measured at 23 K for x equals 0.26. Excellent thickness and composition uniformity is obtained: standard deviation of the CdTe thickness 0.4% of the average thickness on 2-in. and 2.3% on 5-in., standard deviation of the Cd concentration in the HgCdTe layers 0.6% of the average concentration on 3-in. and 2.4% on 5-in. First results regarding growth of CdTe on patterned Si substrates are also reported.

  18. Injection of electron beam into a toroidal trap using chaotic orbits near magnetic null.

    Science.gov (United States)

    Nakashima, C; Yoshida, Z; Himura, H; Fukao, M; Morikawa, J; Saitoh, H

    2002-03-01

    Injection of charged particle beam into a toroidal magnetic trap enables a variety of interesting experiments on non-neutral plasmas. Stationary radial electric field has been produced in a toroidal geometry by injecting electrons continuously. When an electron gun is placed near an X point of magnetic separatrix, the electron beam spreads efficiently through chaotic orbits, and electrons distribute densely in the torus. The current returning back to the gun can be minimized less than 1% of the total emission.

  19. The injection of ten electron/3He-rich SEP events

    Science.gov (United States)

    Wang, Linghua; Mason, Glenn; Krucker, Samuel; Li, Gang

    2016-07-01

    We have derived the particle injections at the Sun for ten good electron/ ^{3}He-rich solar energetic particle (SEP) events, using a 1.2 AU particle path length (suggested by analysis of the velocity dispersion). The inferred solar injections of high-energy (˜10 to 300 keV) electrons and of ˜MeV/nucleon ions (carbon and heavier) start with a delay of 17±3 minutes and 75±±14 minutes, respectively, after the injection of low-energy (˜0.4 to 9 keV) electrons. The injection duration (averaged over energy) ranges from ˜200 to 550 minutes for ions, from ˜90 to 160 minutes for low-energy electrons, and from ˜10 to 30 minutes for high-energy electrons. Most of the selected events have no reported H_{α} flares or GOES SXR bursts, but all have type III radio bursts that typically start after the onset of a low-energy electron injection. All nine events with SOHO/LASCO coverage have a relatively fast (>570km/s), mostly narrow (≲30°), west-limb coronal mass ejection (CME) that launches near the start of the low-energy electron injection, and reaches an average altitude of ˜1.0 and 4.7 R _{S} , respectively, at the start of the high-energy electron injection and of the ion injection. The electron energy spectra show a continuous power law extending across the transition from low to high energies, suggesting that the low-energy electron injection may provide seed electrons for the delayed high-energy electron acceleration. The delayed ion injections and high ionization states may suggest an ion acceleration along the lower altitude flanks, rather than at the nose of the CMEs.

  20. The injection of ten electron/3He-rich SEP events

    Science.gov (United States)

    Wang, Linghua; Krucker, Säm; Mason, Glenn; Li, Gang

    2017-04-01

    We have derived the particle injections at the Sun for ten good electron/3He-rich solar energetic particle (SEP) events, using a 1.2 AU particle path length (suggested by analysis of the velocity dispersion). The inferred solar injections of high-energy (˜10 to 300 keV) electrons and of ˜MeV/nucleon ions (carbon and heavier) start with a delay of 17±3 minutes and 75±14 minutes, respectively, after the injection of low-energy (˜0.4 to 9 keV) electrons. The injection duration (averaged over energy) ranges from ˜200 to 550 minutes for ions, from ˜90 to 160 minutes for low-energy electrons, and from ˜10 to 30 minutes for high-energy electrons. Most of the selected events have no reported Hα flares or GOES SXR bursts, but all have type III radio bursts that typically start after the onset of a low-energy electron injection. All nine events with SOHO/LASCO coverage have a relatively fast (>570km/s), mostly narrow (≲30°), west-limb coronal mass ejection (CME) that launches near the start of the low-energy electron injection, and reaches an average altitude of ˜1.0 and 4.7 RS, respectively, at the start of the high-energy electron injection and of the ion injection. The electron energy spectra show a continuous power law extending across the transition from low to high energies, suggesting that the low-energy electron injection may provide seed electrons for the delayed high-energy electron acceleration. The delayed ion injections and high ionization states may suggest an ion acceleration along the lower altitude flanks, rather than at the nose of the CMEs.

  1. Hole-enhanced electron injection from ZnO in inverted polymer light-emitting diodes

    NARCIS (Netherlands)

    Lu, Mingtao; de Bruyn, Paul; Nicolai, Herman T.; Wetzelaer, Gert-Jan A. H.; Blom, Paul W. M.

    Metal oxides as ZnO provide an interesting alternative for conventional low work function metals as electron injection layer in organic light-emitting diodes (OLEDs). However, for most state-of-the-art OLED materials the high work function of ZnO leads to a large injection barrier for electrons. As

  2. Hole-enhanced electron injection from ZnO in inverted polymer light-emitting diodes

    NARCIS (Netherlands)

    Lu, Mingtao; de Bruyn, Paul; Nicolai, Herman T.; Wetzelaer, Gert-Jan A. H.; Blom, Paul W. M.

    2012-01-01

    Metal oxides as ZnO provide an interesting alternative for conventional low work function metals as electron injection layer in organic light-emitting diodes (OLEDs). However, for most state-of-the-art OLED materials the high work function of ZnO leads to a large injection barrier for electrons. As

  3. Optimal injection scheme for electron acceleration by a tightly focused laser beam

    Institute of Scientific and Technical Information of China (English)

    Chen Min; Sheng Zheng-Ming; Zhang Jie

    2005-01-01

    Electron dynamics and energy gain in a tightly focused laser beam in vacuum are investigated by numerical simulations. There exist two acceleration mechanisms, i.e. acceleration by the longitudinal field or by the transverse field, which corresponds to two different trajectories. The relationship between the energy gain and the injection parameters of electrons, including the injection angle and momentum, is shown. For given laser parameters, the optimum injection parameters can be obtained.

  4. Performance Enhancement of Organic Light-Emitting Diodes Using Electron-Injection Materials of Metal Carbonates

    Science.gov (United States)

    Shin, Jong-Yeol; Kim, Tae Wan; Kim, Gwi-Yeol; Lee, Su-Min; Shrestha, Bhanu; Hong, Jin-Woong

    2016-05-01

    Performance of organic light-emitting diodes was investigated depending on the electron-injection materials of metal carbonates (Li2CO3 and Cs2CO3 ); and number of layers. In order to improve the device efficiency, two types of devices were manufactured by using the hole-injection material (Teflon-amorphous fluoropolymer -AF) and electron-injection materials; one is a two-layer reference device ( ITO/Teflon-AF/Alq3/Al ) and the other is a three-layer device (ITO/Teflon-AF/Alq3/metal carbonate/Al). From the results of the efficiency for the devices with hole-injection layer and electron-injection layer, it was found that the electron-injection layer affects the electrical properties of the device more than the hole-injection layer. The external-quantum efficiency for the three-layer device with Li2CO3 and Cs2CO3 layer is improved by approximately six and eight times, respectively, compared with that of the two-layer reference device. It is thought that a use of electron-injection layer increases recombination rate of charge carriers by the active injection of electrons and the blocking of holes.

  5. ROIC for HgCdTe e-APD FPA

    Science.gov (United States)

    Chen, Guoqiang; Zhang, Junling; Wang, Pan; Zhou, Jie; Gao, Lei; Ding, Ruijun

    2013-08-01

    Ultra-low light imaging and passive/active dual mode imaging require very low noise optical receivers to achieve detection of fast and weak optical signal. HgCdTe electrons initiated avalanche photodiodes (e-APDs) in linear multiplication mode is the detector of choice thanks to its high quantum efficiency, high gain at low bias, high bandwidth and low noise factor. In my work, a passive/active dual mode readout integrated circuit (ROIC) of e-APD focal plane array (FPA) is designed. Unit cell circuit architecture of ROIC includes a capacitance feedback transimpedance amplifier (CTIA) as preamplifier of ROIC, a high voltage protection module, a comparator, a Sample-Hold circuit module, and output driver stage. There is a protection module in every unit cell circuit which can avoid ROIC to be damaged from avalanche breakdown of some diodes of detector. Conventional 5V CMOS process is applied to implement the high voltage protection with the small area rather than Laterally Diffused Metal Oxide Semiconductor (LDMOS) in high voltage BCD process in the limited 100um×100um pitch area. In CTIA module, three integration capacitances are included in the CTIA module, two of them are switchable to provide different well capacity and noise. Constraints such as pixel area, stability and power lead us design toward a simple one-stage cascade operational transconductance amplifier (OTA) as pre-amplifier. High voltage protection module can protect ROIC to be damaged because of breakdown of some avalanche diodes.

  6. Spin injection into a two-dimensional electron gas using inter-digital-ferromagnetic contacts

    DEFF Research Database (Denmark)

    Hu, C.M.; Nitta, J.; Jensen, Ane;

    2002-01-01

    We present a model that describes the spin injection across a single interface with two electrodes. The spin-injection rate across a typical hybrid junction made of ferromagnet (FM) and a two-dimensional electron gas (2DEG) is found at the percentage level. We perforin spin-injection-detection ex......-injection-detection experiment on devices with two ferromagnetic contacts on a 2DEG confined in an InAs quantum well. A spin-injection rate of 4.5% is estimated from the measured magnetoresistance....

  7. COMPARISON OF CHARACTERIZATION TECHNIQUES IN P-ON-N HgCdTe LWIR PHOTODIODES TECHNOLOGY

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    In this paper standard techniques for characterization of HgCdTe liquid phase epitaxial layers (LPE) were presented. The performance of long wavelength p-on-n HgCdTe photodiodes fabricated by arsenic diffusion was described. The correlation between LPE HgCdTe material parameters and properties of the infrared photodiodes was demonstrated.

  8. The Solar injection of ten electron/3He-rich SEP events

    Science.gov (United States)

    Wang, L.; Krucker, S.; Mason, G. M.; Li, G.

    2016-12-01

    We have derived the particle injections at the Sun for ten good electron/3He-rich solar energetic particle (SEP) events, using a 1.2 AU particle path length (suggested by analysis of the velocity dispersion). The inferred solar injections of high-energy ( 10 to 300 keV) electrons and of ˜MeV/nucleon ions (carbon and heavier) start with a delay of 17 ± 3 min and 75 ± 14 min, respectively, after the injection of low-energy ( 0.4 to 9 keV) electrons. The injection duration (averaged over energy) ranges from 200 to 550 min for ions, from 90 to 160 min for low-energy electrons, and from 10 to 30 min for high-energy electrons. Most of the selected events have no reported Hα flares or GOES SXR bursts, but all have type III radio bursts that typically start after the onset of a low-energy electron injection. All nine events with SOHO/LASCO coverage have a relatively fast (>570 km s-1), mostly narrow (seed electrons for the delayed high-energy electron acceleration. The delayed ion injections and high ionization states may suggest an ion acceleration along the lower altitude flanks, rather than at the nose of the CMEs.

  9. Beam loading by distributed injection of electrons in a plasma wakefield accelerator.

    Science.gov (United States)

    Vafaei-Najafabadi, N; Marsh, K A; Clayton, C E; An, W; Mori, W B; Joshi, C; Lu, W; Adli, E; Corde, S; Litos, M; Li, S; Gessner, S; Frederico, J; Fisher, A S; Wu, Z; Walz, D; England, R J; Delahaye, J P; Clarke, C I; Hogan, M J; Muggli, P

    2014-01-17

    We show through experiments and supporting simulations that propagation of a highly relativistic and dense electron bunch through a plasma can lead to distributed injection of electrons, which depletes the accelerating field, i.e., beam loads the wake. The source of the injected electrons is ionization of the second electron of rubidium (Rb II) within the wake. This injection of excess charge is large enough to severely beam load the wake, and thereby reduce the transformer ratio T. The reduction of the average T with increasing beam loading is quantified for the first time by measuring the ratio of peak energy gain and loss of electrons while changing the beam emittance. Simulations show that beam loading by Rb II electrons contributes to the reduction of the peak accelerating field from its weakly loaded value of 43  GV/m to a strongly loaded value of 26  GV/m.

  10. MBE HgCdTe heterostructure detectors

    Science.gov (United States)

    Schulman, Joel N.; Wu, Owen K.

    1990-01-01

    HgCdTe has been the mainstay for medium (3 to 5 micron) and long (10 to 14 micron) wavelength infrared detectors in recent years. Conventional growth and processing techniques are continuing to improve the material. However, the additional ability to tailor composition and placement of doped layers on the tens of angstroms scale using molecular beam epitaxy (MBE) provides the opportunity for new device physics and concepts to be utilized. MBE-based device structures to be discussed here can be grouped into two categories: tailored conventional structures and quantum structures. The tailored conventional structures are improvements on familiar devices, but make use of the ability to create layers of varying composition, and thus band gap, at will. The heterostructure junction can be positioned independently of doping p-n junctions. This allows the small band gap region in which the absorption occurs to be separated from a larger band gap region in which the electric field is large and where unwanted tunneling can occur. Data from hybrid MBE/liquid phase epitaxy (LPE)/bulk structures are given. Quantum structures include the HgTe-CdTe superlattice, in which the band gap and transport can be controlled by alternating thin layers (tens of angstroms thick) of HgTe and CdTe. The superlattice has been shown to exhibit behavior which is non-alloy like, including very high hole mobilities, two-dimensional structure in the absorption coefficient, resonant tunneling, and anisotropic transport.

  11. SPECTRAL VARIABILITY AND TRANSIENT INJECTION OF RELATIVISTIC ELECTRONS FOR BL LAC OBJECTS

    Institute of Scientific and Technical Information of China (English)

    MEI DONG-CHENG; XIE GUANG-ZHONG; CHEN LUO-EN

    2000-01-01

    The spectral hardening with increasing intensity in optical range for four BL Lac objects have been found by analyzing our observed data. Making use of the synchrotron loss of transient injection of relativistic electrons, we succeeded in explaining the phenomenon of the spectral hardening in the outburst phase. The value of magnetic intensity and the limit condition of the transient injection of relativistic electrons seem to be reasonable.

  12. Universal electron injection dynamics at nanointerfaces in dye-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Lei; Wang, Hai-Yu; Fang, Hong-Hua; Gao, Bing-Rong; Chen, Qi-Dai [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun (China); Wang, Hai; Yang, Zhi-Yong; Sun, Hong-Bo [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun (China); College of Physics, Jilin University, Changchun (China); Han, Wei [College of Physics, Jilin University, Changchun (China)

    2012-07-10

    Initial nanointerfacial electron transfer dynamics are studied in dye-sensitized solar cells (DSSCs) in which the free energy and kinetics vary over a broad range. Surprisingly, it is found that the decay profiles, reflecting the electron transfer behavior, show a universal shape despite the different kinds of dye and semiconductor nanocrystalline films, even across different device types. This renews intuitive knowledge about the electron injection process in DSSCs. In order to quantitatively comprehend the universal behavior, a static inhomogeneous electronic coupling model with a Gaussian distribution of local injection energetics is proposed in which only the electron injection rate is a variant. It is confirmed that this model can be extended to CdSe quantum dot-sensitized films. These unambiguous results indicate exactly the same physical distribution in electron injection process of different sensitization films, providing limited simple and important parameters describing the electron injection process including electronic coupling constant and reorganization energy. The results provide insight into photoconversion physics and the design of optimal metal-free organic dye-sensitized photovoltaic devices by molecular engineering. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Heavy Ion Injection Into Synchrotrons, Based On Electron String Ion Sources

    CERN Document Server

    Donets, E E; Syresin, E M

    2004-01-01

    A possibility of heavy ions injection into synchrotrons is discussed on the base of two novel ion sources, which are under development JINR during last decade: 1) the electron string ion source (ESIS), which is a modified version of a conventional electron beam ion source (EBIS), working in a reflex mode of operation, and 2) the tubular electron string ion source (TESIS). The Electron String Ion Source "Krion-2" (VBLHE, JINR, Dubna) with an applied confining magnetic field of 3 T was used for injection into the superconducting JINR synchrotron - Nuclotron and during this runs the source provided a high pulse intensity of the highly charged ion beams: Ar16+

  14. Dry etched SiO2 Mask for HgCdTe Etching Process

    Science.gov (United States)

    Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

    2016-09-01

    A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

  15. Nanoscale Electron Bunching in Laser-Triggered Ionization Injection in Plasma Accelerators

    Science.gov (United States)

    Xu, X. L.; Pai, C.-H.; Zhang, C. J.; Li, F.; Wan, Y.; Wu, Y. P.; Hua, J. F.; Lu, W.; An, W.; Yu, P.; Joshi, C.; Mori, W. B.

    2016-07-01

    Ionization injection is attractive as a controllable injection scheme for generating high quality electron beams using plasma-based wakefield acceleration. Because of the phase-dependent tunneling ionization rate and the trapping dynamics within a nonlinear wake, the discrete injection of electrons within the wake is nonlinearly mapped to a discrete final phase space structure of the beam at the location where the electrons are trapped. This phenomenon is theoretically analyzed and examined by three-dimensional particle-in-cell simulations which show that three-dimensional effects limit the wave number of the modulation to between >2 k0 and about 5 k0, where k0 is the wave number of the injection laser. Such a nanoscale bunched beam can be diagnosed by and used to generate coherent transition radiation and may find use in generating high-power ultraviolet radiation upon passage through a resonant undulator.

  16. Nano-scale electron bunching in laser-triggered ionization injection in plasma accelerators

    CERN Document Server

    Xu, X L; Li, F; Wan, Y; Wu, Y P; Hua, J F; Pai, C -H; Lu, W; An, W; Yu, P; Mori, W B; Joshi, C

    2015-01-01

    Ionization injection is attractive as a controllable injection scheme for generating high quality electron beams using plasma-based wakefield acceleration. Due to the phase dependent tunneling ionization rate and the trapping dynamics within a nonlinear wake, the discrete injection of electrons within the wake is nonlinearly mapped to discrete final phase space structure of the beam at the location where the electrons are trapped. This phenomenon is theoretically analyzed and examined by three-dimensional particle-in-cell simulations which show that three dimensional effects limit the wave number of the modulation to between $> 2k_0$ and about $5k_0$, where $k_0$ is the wavenumber of the injection laser. Such a nano-scale bunched beam can be diagnosed through coherent transition radiation upon its exit from the plasma and may find use in generating high-power ultraviolet radiation upon passage through a resonant undulator.

  17. Picosecond electron injection dynamics in dye-sensitized oxides in the presence of electrolyte

    NARCIS (Netherlands)

    Pijpers, J.J.H.; Ulbricht, R.; Derossi, S.; Reek, J.N.H.; Bonn, M.

    2011-01-01

    We employ time-resolved terahertz (THz) spectroscopy (TRTS) to directly monitor the picosecond dynamics of electron transfer in dye-sensitized oxides in the presence of an electrolyte phase. Understanding the time scale on which electrons are injected from the dye into the oxide phase in the presenc

  18. Extremely short relativistic-electron-bunch generation in the laser wakefield via novel bunch injection scheme

    NARCIS (Netherlands)

    Khachatryan, A.G.; Goor, van F.A.; Boller, K.-J.; Reitsma, A.J.W.; Jaroszynski, D.A.

    2004-01-01

    Recently a new electron-bunch injection scheme for the laser wakefield accelerator has been proposed [JETP Lett. 74, 371 (2001); Phys. Rev. E 65, 046504 (2002)]. In this scheme, a low energy electron bunch, sent in a plasma channel just before a high-intensity laser pulse, is trapped in the laser wa

  19. Current-injection in a ballastic multiterminal superconductor/two-dimensional electron gas Josephson junction

    NARCIS (Netherlands)

    Schäpers, Th.; Guzenko, V.A.; Müller, R.P.; Golubov, A.A.; Brinkman, A.; Crecelius, G.; Kaluza, A.; Lüth, H.

    2003-01-01

    We study the suppression of the critical current in a multi-terminal superconductor/two-dimensional electron gas/superconductor Josephson junction by means of hot carrier injection. As a superconductor Nb is used, while the two-dimensional electron gas is located in a strained InGaAs/InP heterostruc

  20. To what extent can charge localization influence electron injection efficiency at graphene-porphyrin interfaces?

    KAUST Repository

    Parida, Manas R.

    2015-04-28

    Controlling the electron transfer process at donor- acceptor interfaces is a research direction that has not yet seen much progress. Here, with careful control of the charge localization on the porphyrin macrocycle using β -Cyclodextrin as an external cage, we are able to improve the electron injection efficiency from cationic porphyrin to graphene carboxylate by 120% . The detailed reaction mechanism is also discussed.

  1. The injection of ten electron/$^{3}$He-rich SEP events

    CERN Document Server

    Wang, Linghua; Mason, Glenn M; Lin, Robert P; Li, Gang

    2016-01-01

    We have derived the particle injections at the Sun for ten good electron/$^{3}$He-rich solar energetic particle (SEP) events, using a 1.2 AU particle path length (suggested by analysis of the velocity dispersion). The inferred solar injections of high-energy ($\\sim$10 to 300 keV) electrons and of $\\sim$MeV/nucleon ions (carbon and heavier) start with a delay of 17$\\pm$3 minutes and 75$\\pm$14 minutes, respectively, after the injection of low-energy ($\\sim$0.4 to 9 keV) electrons. The injection duration (averaged over energy) ranges from $\\sim$200 to 550 minutes for ions, from $\\sim$90 to 160 minutes for low-energy electrons, and from $\\sim$10 to 30 minutes for high-energy electrons. Most of the selected events have no reported H$\\alpha$ flares or GOES SXR bursts, but all have type III radio bursts that typically start after the onset of a low-energy electron injection. All nine events with SOHO/LASCO coverage have a relatively fast ($>$570km/s), mostly narrow ($\\lesssim$30$^{\\circ}$), west-limb coronal mass ej...

  2. Ultrahigh-gradient acceleration of injected eletrons by laser-excited relativistic electron plasma waves

    Science.gov (United States)

    Clayton, C. E.; Marsh, K. A.; Dyson, A.; Everett, M.; Lal, A.; Leemans, W. P.; Williams, R.; Joshi, C.

    1993-01-01

    High-gradient acceleration of externally injected 2.1-MeV electrons by a laser beat wave driven relativistic plasma wave has been demonstrated for the first time. Electrons with energies up to the detection limit of 9.1 MeV were detected when such a plasma wave was resonantly excited using a two-frequency laser. This implies a gradient of 0.7 GeV/m, corresponding to a plasma-wave amplitude of more than 8%. The electron signal was below detection threshold without injection or when the laser was operated on a single frequency.

  3. Dynamics of electron injection and acceleration driven by laser wakefield in tailored density profiles

    Science.gov (United States)

    Lee, P.; Maynard, G.; Audet, T. L.; Cros, B.; Lehe, R.; Vay, J.-L.

    2016-11-01

    The dynamics of electron acceleration driven by laser wakefield is studied in detail using the particle-in-cell code WARP with the objective to generate high-quality electron bunches with narrow energy spread and small emittance, relevant for the electron injector of a multistage accelerator. Simulation results, using experimentally achievable parameters, show that electron bunches with an energy spread of ˜11 % can be obtained by using an ionization-induced injection mechanism in a mm-scale length plasma. By controlling the focusing of a moderate laser power and tailoring the longitudinal plasma density profile, the electron injection beginning and end positions can be adjusted, while the electron energy can be finely tuned in the last acceleration section.

  4. Numerical Device Modeling, Analysis, and Optimization of Extended-SWIR HgCdTe Infrared Detectors

    Science.gov (United States)

    Schuster, J.; DeWames, R. E.; DeCuir, E. A.; Bellotti, E.; Dhar, N.; Wijewarnasuriya, P. S.

    2016-09-01

    Imaging in the extended short-wavelength infrared (eSWIR) spectral band (1.7-3.0 μm) for astronomy applications is an area of significant interest. However, these applications require infrared detectors with extremely low dark current (less than 0.01 electrons per pixel per second for certain applications). In these detectors, sources of dark current that may limit the overall system performance are fundamental and/or defect-related mechanisms. Non-optimized growth/device processing may present material point defects within the HgCdTe bandgap leading to Shockley-Read-Hall dominated dark current. While realizing contributions to the dark current from only fundamental mechanisms should be the goal for attaining optimal device performance, it may not be readily feasible with current technology and/or resources. In this regard, the U.S. Army Research Laboratory performed physics-based, two- and three-dimensional numerical modeling of HgCdTe photovoltaic infrared detectors designed for operation in the eSWIR spectral band. The underlying impetus for this capability and study originates with a desire to reach fundamental performance limits via intelligent device design.

  5. Studies on a novel mask technique with high selectivity and aspect-ratio patterns for HgCdTe trenches ICP etching

    Science.gov (United States)

    Ye, Z. H.; Hu, W. D.; Li, Y.; Huang, J.; Yin, W. T.; Lin, C.; Hu, X. N.; Ding, R. J.; Chen, X. S.; Lu, W.; He, L.

    2012-06-01

    A novel mask technique, combining high selectivity silicon dioxide patterns over high aspect-ratio photoresist (PR) patterns has been exploited to perform mesa etching for device delineation and electrical isolation of HgCdTe third-generation infrared focal plane arrays (IRFPAs). High-density silicon dioxide film covering high aspect-ratio PR patterns was deposited at the temperature of 80°C and silicon dioxide film patterns over high aspect-ratio PR patterns of HgCdTe etching samples was developed by standard photolithography and wet chemical etch. Scanning electron microscopy (SEM) shows that the surfaces of inductively coupled plasma (ICP) etched samples are quite clean and smooth. The etching selectivity between the novel mask and HgCdTe of the samples is increased to above 32: 1 while the side-wall impact of etching plasma is suppressed by the high aspect ratio patterns. These results show that the combined patterning of silicon dioxide film and thick PR film is a readily available and promising masking technique for HgCdTe mesa etching.

  6. Designing a Prototype LPG Injection Electronic Control Unit for a Carburetted Gasoline Engine

    Directory of Open Access Journals (Sweden)

    Barış ERKUŞ

    2015-07-01

    Full Text Available In this study, the originally carburetted gasoline engine was converted to gas-phase liquefied petroleum gas (LPG injection engine by using an after market LPG conversion kit's components except the electronic control unit (ECU. Instead of after market LPG injection ECU, the ECU which was designed considering the effects of  electromagnetic interference (EMI, was used for controlling injection. The designed ECU was tested in terms of EMI while the engine was being run and it was detected that the EMI noises could be suppressed as possible by taken measures. Designed ECU was used in performance tests at different engine conditions and the results obtained with LPG injection were compared with the results obtained with LPG carburetion. According to the performance test results, LPG injection ECU designed in this study could help to achieve low exhaust emissions and high engine performance.  

  7. Detecting Solenoid Valve Deterioration in In-Use Electronic Diesel Fuel Injection Control Systems

    OpenAIRE

    Chyuan-Yow Tseng; Hsun-Heng Tsai

    2010-01-01

    The diesel engine is the main power source for most agricultural vehicles. The control of diesel engine emissions is an important global issue. Fuel injection control systems directly affect fuel efficiency and emissions of diesel engines. Deterioration faults, such as rack deformation, solenoid valve failure, and rack-travel sensor malfunction, are possibly in the fuel injection module of electronic diesel control (EDC) systems. Among these faults, solenoid valve failure is most likely to oc...

  8. Novel multi-chromophor light absorber concepts for DSSCs for efficient electron injection

    Energy Technology Data Exchange (ETDEWEB)

    Schuetz, Robert; Strothkaemper, Christian; Bartelt, Andreas; Hannappel, Thomas; Eichberger, Rainer [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Fasting, Carlo [Institut fuer Organische Chemie, Freie Universitaet Berlin, Takustrasse 3, 14195 Berlin (Germany); Thomas, Inara [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Institut fuer Organische Chemie, Freie Universitaet Berlin, Takustrasse 3, 14195 Berlin (Germany)

    2011-07-01

    Dye sensitized solar cells (DSSCs) operate by injecting electrons from the excited state of a light-harvesting dye into the continuum of conduction band states of a wide bandgap semiconductor. The light harvesting efficiency of pure organic dyes is limited by a narrow spectral electronic transition. A beneficial broad ground state absorption in the VIS region can be achieved by applying a single molecular dye system with multiple chromophors involving a Foerster resonance energy transfer (FRET) mechanism for an efficient electron injection. A model donor acceptor dye system capable for FRET chemically linked to colloidal TiO{sub 2} and ZnO nanorod surfaces was investigated in UHV environment. We used VIS/NIR femtosecond transient absorption spectroscopy and optical pump terahertz probe spectroscopy to study the charge injection dynamics of the antenna system. Different chromophors attached to a novel scaffold/anchor system connecting the organic absorber unit to the metal oxide semiconductor were probed.

  9. Piecewise-homogeneous model for electron side injection into linear plasma waves

    Energy Technology Data Exchange (ETDEWEB)

    Golovanov, A.A., E-mail: agolovanov256@gmail.com; Kostyukov, I.Yu., E-mail: kost@appl.sci-nnov.ru

    2016-09-01

    An analytical piecewise-homogeneous model for electron side injection into linear plasma waves is developed. The dynamics of transverse betatron oscillations are studied. Based on the characteristics of the transversal motion the longitudinal motion of electrons is described. The electron parameters for which the electron trapping and subsequent acceleration are possible are estimated. The analytical results are verified by numerical simulations in the scope of the piecewise-homogeneous model. The results predicted by this model are also compared to the results given by a more realistic inhomogeneous model. - Highlights: • A piecewise-homogeneous model of side injection into a linear wakefield is developed. • The dynamics of betatron oscillations in the focusing phase is analytically studied. • The area of parameters for electron trapping is determined. • The model is compared to a more realistic inhomogeneous model.

  10. Electrogenerated chemiluminescence induced by sequential hot electron and hole injection into aqueous electrolyte solution

    Energy Technology Data Exchange (ETDEWEB)

    Salminen, Kalle; Kuosmanen, Päivi; Pusa, Matti [Aalto University, Department of Chemistry, Laboratory of Analytical Chemistry, P.O. Box 16100, FI-00076 Aalto (Finland); Kulmala, Oskari [University of Helsinki, Department of Physics, P.O. Box 64, FI-00014 (Finland); Håkansson, Markus [Aalto University, Department of Chemistry, Laboratory of Analytical Chemistry, P.O. Box 16100, FI-00076 Aalto (Finland); Kulmala, Sakari, E-mail: sakari.kulmala@aalto.fi [Aalto University, Department of Chemistry, Laboratory of Analytical Chemistry, P.O. Box 16100, FI-00076 Aalto (Finland)

    2016-03-17

    Hole injection into aqueous electrolyte solution is proposed to occur when oxide-coated aluminum electrode is anodically pulse-polarized by a voltage pulse train containing sufficiently high-voltage anodic pulses. The effects of anodic pulses are studied by using an aromatic Tb(III) chelate as a probe known to produce intensive hot electron-induced electrochemiluminescence (HECL) with plain cathodic pulses and preoxidized electrodes. The presently studied system allows injection of hot electrons and holes successively into aqueous electrolyte solutions and can be utilized in detecting electrochemiluminescent labels in fully aqueous solutions, and actually, the system is suggested to be quite close to a pulse radiolysis system providing hydrated electrons and hydroxyl radicals as the primary radicals in aqueous solution without the problems and hazards of ionizing radiation. The analytical power of the present excitation waveforms are that they allow detection of electrochemiluminescent labels at very low detection limits in bioaffinity assays such as in immunoassays or DNA probe assays. The two important properties of the present waveforms are: (i) they provide in situ oxidation of the electrode surface resulting in the desired oxide film thickness and (ii) they can provide one-electron oxidants for the system by hole injection either via F- and F{sup +}-center band of the oxide or by direct hole injection to valence band of water at highly anodic pulse amplitudes. - Highlights: • Hot electrons injected into aqueous electrolyte solution. • Generation of hydrated electrons. • Hole injection into aqueous electrolyte solution. • Generation of hydroxyl radicals.

  11. Syringe-Injectable Electronics with a Plug-and-Play Input/Output Interface.

    Science.gov (United States)

    Schuhmann, Thomas G; Yao, Jun; Hong, Guosong; Fu, Tian-Ming; Lieber, Charles M

    2017-09-13

    Syringe-injectable mesh electronics represent a new paradigm for brain science and neural prosthetics by virtue of the stable seamless integration of the electronics with neural tissues, a consequence of the macroporous mesh electronics structure with all size features similar to or less than individual neurons and tissue-like flexibility. These same properties, however, make input/output (I/O) connection to measurement electronics challenging, and work to-date has required methods that could be difficult to implement by the life sciences community. Here we present a new syringe-injectable mesh electronics design with plug-and-play I/O interfacing that is rapid, scalable, and user-friendly to nonexperts. The basic design tapers the ultraflexible mesh electronics to a narrow stem that routes all of the device/electrode interconnects to I/O pads that are inserted into a standard zero insertion force (ZIF) connector. Studies show that the entire plug-and-play mesh electronics can be delivered through capillary needles with precise targeting using microliter-scale injection volumes similar to the standard mesh electronics design. Electrical characterization of mesh electronics containing platinum (Pt) electrodes and silicon (Si) nanowire field-effect transistors (NW-FETs) demonstrates the ability to interface arbitrary devices with a contact resistance of only 3 Ω. Finally, in vivo injection into mice required only minutes for I/O connection and yielded expected local field potential (LFP) recordings from a compact head-stage compatible with chronic studies. Our results substantially lower barriers for use by new investigators and open the door for increasingly sophisticated and multifunctional mesh electronics designs for both basic and translational studies.

  12. Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Yu-Hsuan; Pilkuhn, Manfred H. [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Fu, Yi-Keng; Chu, Mu-Tao [Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan (China); Huang, Shyh-Jer, E-mail: yksu@mail.ncku.edu.tw, E-mail: totaljer48@gmail.com [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, California 90095 (United States); Su, Yan-Kuin, E-mail: yksu@mail.ncku.edu.tw, E-mail: totaljer48@gmail.com [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Department of Electronic Engineering, Kun-Shan University, Tainan 71003, Taiwan (China); Wang, Kang L. [Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, California 90095 (United States)

    2014-03-21

    The influence of the AlGaN electron blocking layer (EBL) with graded aluminum composition on electron confinement and hole injection in AlGaN-based ultraviolet light-emitting diodes (LEDs) are investigated. The light output power of LED with graded AlGaN EBL was markedly improved, comparing to LED with conventional EBL. In experimental results, a high increment of 86.7% can be obtained in light output power. Simulation analysis shows that via proper modification of the barrier profile from the last barrier of the active region to EBL, not only the elimination of electron overflow to p-type layer can be achieved but also the hole injection into the active region can be enhanced, compared to a conventional LED structure. The dominant factor to the performance improvement is shown to be the modulation of polarization field by the graded Al composition in EBL.

  13. Syringe Injectable Electronics: Precise Targeted Delivery with Quantitative Input/Output Connectivity.

    Science.gov (United States)

    Hong, Guosong; Fu, Tian-Ming; Zhou, Tao; Schuhmann, Thomas G; Huang, Jinlin; Lieber, Charles M

    2015-10-14

    Syringe-injectable mesh electronics with tissue-like mechanical properties and open macroporous structures is an emerging powerful paradigm for mapping and modulating brain activity. Indeed, the ultraflexible macroporous structure has exhibited unprecedented minimal/noninvasiveness and the promotion of attractive interactions with neurons in chronic studies. These same structural features also pose new challenges and opportunities for precise targeted delivery in specific brain regions and quantitative input/output (I/O) connectivity needed for reliable electrical measurements. Here, we describe new results that address in a flexible manner both of these points. First, we have developed a controlled injection approach that maintains the extended mesh structure during the "blind" injection process, while also achieving targeted delivery with ca. 20 μm spatial precision. Optical and microcomputed tomography results from injections into tissue-like hydrogel, ex vivo brain tissue, and in vivo brains validate our basic approach and demonstrate its generality. Second, we present a general strategy to achieve up to 100% multichannel I/O connectivity using an automated conductive ink printing methodology to connect the mesh electronics and a flexible flat cable, which serves as the standard "plug-in" interface to measurement electronics. Studies of resistance versus printed line width were used to identify optimal conditions, and moreover, frequency-dependent noise measurements show that the flexible printing process yields values comparable to commercial flip-chip bonding technology. Our results address two key challenges faced by syringe-injectable electronics and thereby pave the way for facile in vivo applications of injectable mesh electronics as a general and powerful tool for long-term mapping and modulation of brain activity in fundamental neuroscience through therapeutic biomedical studies.

  14. Generation of high quality electron beams via ionization injection in a plasma wakefield accelerator

    Science.gov (United States)

    Vafaei-Najafabadi, Navid; Joshi, Chan; E217 SLAC Collaboration

    2016-10-01

    Ionization injection in a beam driven plasma wakefield accelerator has been used to generate electron beams with over 30 GeV of energy in a 130 cm of lithium plasma. The experiments were performed using the 3 nC, 20.35 GeV electron beam at the FACET facility of the SLAC National Accelerator Laboratory as the driver of the wakefield. The ionization of helium atoms in the up ramp of a lithium plasma were injected into the wake and over the length of acceleration maintained an emittance on the order of 30 mm-mrad, which was an order of magnitude smaller than the drive beam, albeit with an energy spread of 10-20%. The process of ionization injection occurs due to an increase in the electric field of the drive beam as it pinches through its betatron oscillations. Thus, this energy spread is attributed to the injection region encompassing multiple betatron oscillations. In this poster, we will present evidence through OSIRIS simulations of producing an injected beam with percent level energy spread and low emittance by designing the plasma parameters appropriately, such that the ionization injection occurs over a very limited distance of one betatron cycle. Work at UCLA was supported by the NSF Grant Number PHY-1415386 and DOE Grant Number DE-SC0010064. Work at SLAC was supported by DOE contract number DE-AC02-76SF00515. Simulations used the Hoffman cluster at UCLA.

  15. HgCdTe detector technology at Kunming Institute of Physics

    Science.gov (United States)

    Su, Junhong; Zeng, Gehong

    1996-09-01

    HgCdTe detector and thermal image system laboratories at Kunming Institute of Physics have been carrying the research and development of HgCdTe detectors and thermal imaging systems for a wide range applications for over 20 years. During this period, significant progress has been made in many areas such as HgCdTe material, detector, miniature dewar and cooler to meet the requirements of civil and military operations. This paper describes these activities and present status of HgCdTe technology at Kunming Institute of Physics, and some of the problems we faced and how they were solved.

  16. HgCdTe and silicon detectors and FPAs for remote sensing applications

    Science.gov (United States)

    D'Souza, Arvind I.; Stapelbroek, Maryn G.; Robinson, James E.

    2004-02-01

    Photon detectors and focal plane arrays (FPAs) are fabricated from HgCdTe and silicon in many varieties. With appropriate choices for bandgap in HgCdTe, detector architecture, dopants, and operating temperature, HgCdTe and silicon can cover the spectral range from ultraviolet to the very-long-wavelength infrared (VLWIR), exhibit high internal gain to allow photon counting over this broad spectral range, and can be made in large array formats for imaging. DRS makes HgCdTe and silicon detectors and FPAs with unique architectures for a variety of applications. Detector characteristics of High Density Vertically Integrated Photodiode (HDVIP) HdCdTe detectors as well as Focal Plane Arrays (FPAs) are presented in this paper. MWIR[λc(78 K) = 5 μm] HDVIP detectors RoA performance was measured to within a factor or two or three of theoretical. In addition, 256 x 256 detector arrays were fabricated. Initial measurements had seven out of ten FPAs having operabilities greater than 99.45% with the best 256 x 256 array having only two inoperable pixels. LWIR [λc(78K)~10 μm] 640 X 480 arrays and a variety of single color linear arrays have also been fabricated. In addition, two-color arrays have been fabricated. DRS has explored HgCdTe avalanche photo diodes (APDs) in the λc = 2.2 μm to 5 μm range. The λc = 5 μm APDs have greater than 200 DC gain values at 8 Volts bias. Large-format to 10242 Arsenic-doped (Si:As, λc ~ 28 μm), Blocked-Impurity-Band (BIB) detectors have been developed for a variety of pixel formats and have been optimized for low, moderate, and high infrared backgrounds. Antimony-doped silicon (Si:Sb) BIB arrays having response to wavelengths > 40 μm have also been demonstrated. Avalanche processes in Si:As at low temperatures (~ 8 K) have led to two unique solid-state photon-counting detectors adapted to infrared and visible wavelengths. The infrared device is the solid-state photomultiplier (SSPM). A related device optimized for the visible spectral

  17. Down-ramp injection and independently controlled acceleration of electrons in a tailored laser wakefield accelerator

    CERN Document Server

    Hansson, M.; Davoine, X.; Ekerfelt, H.; Svensson, K.; Persson, A.; Wahlström, C.-G.; Lundh, O.; 10.1103/PhysRevSTAB.18.071303

    2015-01-01

    We report on a study on controlled injection of electrons into the accelerating phase of a plasma wakefield accelerator by tailoring the target density distribution using two independent sources of gas. The tailored density distribution is achieved experimentally by inserting a narrow nozzle, with an orifice diameter of only 400  μm , into a jet of gas supplied from a 2 mm diameter nozzle. The combination of these two nozzles is used to create two regions of different density connected by a density gradient. Using this setup we show independent control of the charge and energy distribution of the bunches of accelerated electron as well as decreased shot-to-shot fluctuations in these quantities compared to self-injection in a single gas jet. Although the energy spectra are broad after injection, simulations show that further acceleration acts to compress the energy distribution and to yield peaked energy spectra.

  18. Tetrakis(1-imidazolyl) borate (BIM4) based zwitterionic and related molecules used as electron injection layers

    Science.gov (United States)

    Li, Huaping; Xu, Yunhua; Bazan, Guillermo C

    2013-02-05

    Tetrakis(1-imidazolyl)borate (BIm4) based zwitterionic and/or related molecules for the fabrication of PLEDs is provided. Device performances with these materials approaches that of devices with Ba/Al cathodes for which the cathode contact is ohmic. Methods of producing such materials, and electron injection layers and devices containing these materials are also provided.

  19. Computations on injection into organics : or how to let electrons shine

    NARCIS (Netherlands)

    Uijttewaal, Mattheus Adrianus

    2007-01-01

    This thesis studies various aspects of electron injection into organic light-emitting diodes (OLEDs) using density functional theory and the master equation approach (only the last chapter). The first part of the thesis studies the relation between the work function and the surface stability of a mu

  20. CURRENT SHEET REGULATION OF SOLAR NEAR-RELATIVISTIC ELECTRON INJECTION HISTORIES

    Energy Technology Data Exchange (ETDEWEB)

    Agueda, N.; Sanahuja, B. [Departament d' Astronomia i Meteorologia, Institut de Ciencies del Cosmos, Universitat de Barcelona (Spain); Vainio, R. [Department of Physics, University of Helsinki (Finland); Dalla, S. [Jeremiah Horrocks Institute, University of Central Lancashire (United Kingdom); Lario, D. [Applied Physics Laboratory, Johns Hopkins University (United States)

    2013-03-10

    We present a sample of three large near-relativistic (>50 keV) electron events observed in 2001 by both the ACE and the Ulysses spacecraft, when Ulysses was at high-northern latitudes (>60 Degree-Sign ) and close to 2 AU. Despite the large latitudinal distance between the two spacecraft, electrons injected near the Sun reached both heliospheric locations. All three events were associated with large solar flares, strong decametric type II radio bursts and accompanied by wide (>212 Degree-Sign ) and fast (>1400 km s{sup -1}) coronal mass ejections (CMEs). We use advanced interplanetary transport simulations and make use of the directional intensities observed in situ by the spacecraft to infer the electron injection profile close to the Sun and the interplanetary transport conditions at both low and high latitudes. For the three selected events, we find similar interplanetary transport conditions at different heliolatitudes for a given event, with values of the mean free path ranging from 0.04 AU to 0.27 AU. We find differences in the injection profiles inferred for each spacecraft. We investigate the role that sector boundaries of the heliospheric current sheet (HCS) have on determining the characteristics of the electron injection profiles. Extended injection profiles, associated with coronal shocks, are found if the magnetic footpoints of the spacecraft lay in the same magnetic sector as the associated flare, while intermittent sparse injection episodes appear when the spacecraft footpoints are in the opposite sector or a wrap in the HCS bounded the CME structure.

  1. Influence of electron injection into 27 cm audio plasma cell on the plasma diagnostics

    Energy Technology Data Exchange (ETDEWEB)

    Haleem, N. A.; Ragheb, M. S.; Zakhary, S. G. [Accelerators Department, Nuclear Research Center, AEA, Cairo 13759 (Egypt); El Fiki, S. A.; Nouh, S. A. [Faculty of Science, Ain Shams University, Cairo 11566 (Egypt); El Disoki, T. M. [Faculty of Girls, Ain Shams University, Cairo 11566 (Egypt)

    2013-08-15

    In this article, the plasma is created in a Pyrex tube (L = 27 cm, φ= 4 cm) as a single cell, by a capacitive audio frequency (AF) discharge (f = 10–100 kHz), at a definite pressure of ∼0.2 Torr. A couple of tube linear and deviating arrangements show plasma characteristic conformity. The applied AF plasma and the injection of electrons into two gas mediums Ar and N{sub 2} revealed the increase of electron density at distinct tube regions by one order to attain 10{sup 13}/cm{sup 3}. The electrons temperature and density strengths are in contrast to each other. While their distributions differ along the plasma tube length, they show a decaying sinusoidal shape where their peaks position varies by the gas type. The electrons injection moderates electron temperature and expands their density. The later highest peak holds for the N{sub 2} gas, at electrons injection it changes to hold for the Ar. The sinusoidal decaying density behavior generates electric fields depending on the gas used and independent of tube geometry. The effect of the injected electrons performs a responsive impact on electrons density not attributed to the gas discharge. Analytical tools investigate the interaction of the plasma, the discharge current, and the gas used on the electrodes. It points to the emigration of atoms from each one but for greater majority they behave to a preferred direction. Meanwhile, only in the linear regime, small percentage of atoms still moves in reverse direction. Traces of gas atoms revealed on both electrodes due to sheath regions denote lack of their participation in the discharge current. In addition, atoms travel from one electrode to the other by overcoming the sheaths regions occurring transportation of particles agglomeration from one electrode to the other. The electrons injection has contributed to increase the plasma electron density peaks. These electrons populations have raised the generated electrostatic fields assisting the elemental ions

  2. 640 X 480 Pace HgCdTe FPA

    Science.gov (United States)

    Kozlowski, Lester J.; Bailey, Robert B.; Cabelli, Scott A.; Cooper, Donald E.; McComas, Gail D.; Vural, Kadri; Tennant, William E.

    1992-12-01

    A hybrid HgCdTe 640 X 480 infrared (IR) focal plane array (FPA) that meets the sensitivity, resolution, and field-of-view requirements of high-performance medium wavelength infrared (MWIR) imaging systems has been developed. The key technology making this large, high sensitivity device producible is the epitaxial growth of HgCdTe on a CdTe-buffered, sapphire substrate (referred to as PACE, for Producible Alternative to CdTe for Epitaxy; PACE-I refers to sapphire). The device offers TV resolution with excellent sensitivity at temperatures below 120 K. Mean NE(Delta) T as low as 13 mK has been achieved at operating temperatures nonuniformity compensation.

  3. Role of Direct Laser Acceleration of Electrons in a Laser Wakefield Accelerator with Ionization Injection

    Science.gov (United States)

    Shaw, J. L.; Lemos, N.; Amorim, L. D.; Vafaei-Najafabadi, N.; Marsh, K. A.; Tsung, F. S.; Mori, W. B.; Joshi, C.

    2017-02-01

    We show the first experimental demonstration that electrons being accelerated in a laser wakefield accelerator operating in the forced or blowout regimes gain significant energy from both the direct laser acceleration (DLA) and the laser wakefield acceleration mechanisms. Supporting full-scale 3D particle-in-cell simulations elucidate the role of the DLA of electrons in a laser wakefield accelerator when ionization injection of electrons is employed. An explanation is given for how electrons can maintain the DLA resonance condition in a laser wakefield accelerator despite the evolving properties of both the drive laser and the electrons. The produced electron beams exhibit characteristic features that are indicative of DLA as an additional acceleration mechanism.

  4. Ionization-injected electron acceleration with sub-terawatt laser pulses

    Science.gov (United States)

    Feder, Linus; Goers, Andy; Hine, George; Miao, Bo; Salehi, Fatholah; Woodbury, Daniel; Milchberg, Howard

    2016-10-01

    The vast majority of laser wakefield acceleration (LWFA) experiments use drive lasers with peak powers >10 TW and repetition rates from 10 Hz to less than once an hour. However, it was recently demonstrated that by using a thin, high density gas target, LWFA can be driven by laser pulses well below a TW and with high repetition rates. We present experiments and particle-in-cell (PIC) simulations of the effect of doping the high density gas jet with higher Z molecules (here nitrogen). Our earlier experiments with low-Z gas relied on self-injection of electrons into the accelerating wake through wave-breaking. In ionization injection, the relativistically self-focused laser pulse ionizes the inner shell of the dopant inside the plasma wake. High energy electrons are then trapped by the wakefield in the earliest potential buckets, which overlap with the laser pulse. PIC simulations show acceleration of these electrons by LWFA and directly by the laser pulse, with the direct contribution significantly increasing the electron energy beyond the LWFA contribution alone. Additionally, ionization injection can be controlled to prevent dephasing of the electron beam, resulting in a narrower energy spectrum and lower spatial divergence. This research is supported by the Department of Energy and the National Science Foundation.

  5. Controlled Electron Injection into Plasma Accelerators and SpaceCharge Estimates

    Energy Technology Data Exchange (ETDEWEB)

    Fubiani, Gwenael G.J. [Univ. of California, Berkeley, CA (United States)

    2005-09-01

    Plasma based accelerators are capable of producing electron sources which are ultra-compact (a few microns) and high energies (up to hundreds of MeVs) in much shorter distances than conventional accelerators. This is due to the large longitudinal electric field that can be excited without the limitation of breakdown as in RF structures.The characteristic scale length of the accelerating field is the plasma wavelength and for typical densities ranging from 1018 - 1019 cm-3, the accelerating fields and scale length can hence be on the order of 10-100GV/m and 10-40 μm, respectively. The production of quasimonoenergetic beams was recently obtained in a regime relying on self-trapping of background plasma electrons, using a single laser pulse for wakefield generation. In this dissertation, we study the controlled injection via the beating of two lasers (the pump laser pulse creating the plasma wave and a second beam being propagated in opposite direction) which induce a localized injection of background plasma electrons. The aim of this dissertation is to describe in detail the physics of optical injection using two lasers, the characteristics of the electron beams produced (the micrometer scale plasma wavelength can result in femtosecond and even attosecond bunches) as well as a concise estimate of the effects of space charge on the dynamics of an ultra-dense electron bunch with a large energy spread.

  6. The DFT investigations of the electron injection in hydrazone-based sensitizers

    KAUST Repository

    Al-Sehemi, Abdullah G.

    2012-03-01

    Quantum chemical calculations were carried out by using density functional theory and time-dependant density functional theory at B3LYP/6-31G(d) and TD-B3LYP/6-31G(d) level of theories. The absorption spectra have been computed with and without solvent. The calculated absorption spectra in ethanol, acetonitrile, and methanol are in good agreement with experimental evidences. The absorption spectra are red shifted compared to System1. On the basis of electron injection and electronic coupling constant, we have shed light on the nature of different sensitizers. The coplanarity between the benzene near anchoring group having LUMO and the bridge (N-N) is broken in System6 and System7 that would hamper the recombination process. The electron injection of System2-System10 is superior to System1. The highest electronic coupling constant has been observed for System6 that followed the System7 and System8. The light-harvesting efficiency of all the sensitizers enlarged in acetonitrile and ethanol. The long-range-corrected functional (LC-BLYP), Coulomb-attenuating method (CAM-B3LYP), and BH and HLYP functional underestimate the excitation energies while B3LYP is good to reproduce the experimental data. Moreover, we have investigated the effect of cyanoacetic acid as anchoring group on the electron injection. © 2012 Springer-Verlag.

  7. Electron gun with off-axis beam injection for a race-track microtron

    Energy Technology Data Exchange (ETDEWEB)

    Aloev, A.V. [Institute of Nuclear Physics, Moscow State University, 119991 Moscow (Russian Federation); Carrillo, D. [CIEMAT, Avda. Complutense 22, 28040 Madrid (Spain); Kubyshin, Yu.A., E-mail: iouri.koubychine@upc.ed [Institute of Energy Technologies, Technical University of Catalonia, Campus Sud, Av. Diagonal 647, 08028 Barcelona (Spain); Pakhomov, N.I.; Shvedunov, V.I. [Institute of Nuclear Physics, Moscow State University, 119991 Moscow (Russian Federation)

    2010-12-01

    A miniature 12 MeV race-track microtron for medical applications is under construction at the Technical University of Catalonia in collaboration with several Spanish centers and companies and the Skobeltsyn Institute of Nuclear Physics of the Moscow State University. As a source of electrons a compact 3D on-axis electron gun with an off-axis cathode has been designed to allow a direct and efficient injection into the accelerating structure. Its prototype has been built and successfully tested. Results of the electron gun design simulations and of the prototype performance are herein described.

  8. Enhanced acceleration of injected electrons in a laser-beat-wave-induced plasma channel.

    Science.gov (United States)

    Tochitsky, S Ya; Narang, R; Filip, C V; Musumeci, P; Clayton, C E; Yoder, R B; Marsh, K A; Rosenzweig, J B; Pellegrini, C; Joshi, C

    2004-03-05

    Enhanced energy gain of externally injected electrons by a approximately 3 cm long, high-gradient relativistic plasma wave (RPW) is demonstrated. Using a CO2 laser beat wave of duration longer than the ion motion time across the laser spot size, a laser self-guiding process is initiated in a plasma channel. Guiding compensates for ionization-induced defocusing (IID) creating a longer plasma, which extends the interaction length between electrons and the RPW. In contrast to a maximum energy gain of 10 MeV when IID is dominant, the electrons gain up to 38 MeV energy in a laser-beat-wave-induced plasma channel.

  9. Collisionless Electron-ion Shocks in Relativistic Unmagnetized Jet-ambient Interactions: Non-thermal Electron Injection by Double Layer

    Science.gov (United States)

    Ardaneh, Kazem; Cai, Dongsheng; Nishikawa, Ken-Ichi

    2016-08-01

    The course of non-thermal electron ejection in relativistic unmagnetized electron-ion shocks is investigated by performing self-consistent particle-in-cell simulations. The shocks are excited through the injection of a relativistic jet into ambient plasma, leading to two distinct shocks (referred to as the trailing shock and leading shock) and a contact discontinuity. The Weibel-like instabilities heat the electrons up to approximately half of the ion kinetic energy. The double layers formed in the trailing and leading edges then accelerate the electrons up to the ion kinetic energy. The electron distribution function in the leading edge shows a clear, non-thermal power-law tail which contains ˜1% of electrons and ˜8% of the electron energy. Its power-law index is -2.6. The acceleration efficiency is ˜23% by number and ˜50% by energy, and the power-law index is -1.8 for the electron distribution function in the trailing edge. The effect of the dimensionality is examined by comparing the results of three-dimensional simulations with those of two-dimensional simulations. The comparison demonstrates that electron acceleration is more efficient in two dimensions.

  10. Optical Absorption and Electron Injection of 4-(Cyanomethylbenzoic Acid Based Dyes: A DFT Study

    Directory of Open Access Journals (Sweden)

    Yuehua Zhang

    2015-01-01

    Full Text Available Density functional theory (DFT and time-dependent density functional theory (TDDFT calculations were carried out to study the ground state geometries, electronic structures, and absorption spectra of 4-(cyanomethylbenzoic acid based dyes (AG1 and AG2 used for dye-sensitized solar cells (DSSCs. The excited states properties and the thermodynamical parameters of electron injection were studied. The results showed that (a two dyes have uncoplanar structures along the donor unit and conjugated bridge space, (b two sensitizers exhibited intense absorption in the UV-Vis region, and (c the excited state oxidation potential was higher than the conduction band edge of TiO2 photoanode. As a result, a solar cell based on the 4-(cyanomethylbenzoic acid based dyes exhibited well photovoltaic performance. Furthermore, nine dyes were designed on the basis of AG1 and AG2 to improve optical response and electron injection.

  11. Spin-Polarized Electron Injection in Co/Cu/Fe Sandwich Structure

    Institute of Scientific and Technical Information of China (English)

    WANG Shou-Guo; CHEN Yan-Xue; WANG Zhi-He; CHEN Qiang; XIE Shi-Jie; MEI Liang-Mo

    2000-01-01

    A material asymmetry Co/Cu/Fe junction structure has been prepared for studying the spin-polarized electron injection at 77K. The sample performance was demonstrated to be analogous to that of a bipolar transistor. The maximal value of the output pulse voltage between Cu and Fe layers could reach the order of severalμV when the bias current between Co and Cu layers was 10μA. The interface roughness, photograph of material, magnetic loop and injection characteristic curves have been measured. Some important points on this topic have been discussed.

  12. Collisionless electron-ion shocks in relativistic unmagnetized jet-ambient interactions: Non-thermal electron injection by double layer

    CERN Document Server

    Ardaneh, Kazem; Nishikawa, Ken-Ichi

    2016-01-01

    The course of non-thermal electron ejection in relativistic unmagnetized electron-ion shocks is investigated by performing self-consistent particle-in-cell simulations. The shocks are excited through the injection of relativistic jet into ambient plasma, leading to two distinct shocks (named as the trailing shock and leading shock) and a contact discontinuity. The Weibel-like instabilities heat the electrons up to approximately half of ion kinetic energy. The double layers formed in the trailing and leading edges then accelerated the electrons by the ion kinetic energy. The electron distribution function in the leading edge shows a clear non-thermal power-law tail which contains $\\sim1\\%$ of electrons and $\\sim8\\%$ of electron energy. Its power-law index is -2.6. The acceleration efficiency is $\\sim23\\%$ by number and $\\sim50\\%$ by energy and the power-law index is -1.8 for electron distribution function in the trailing edge. The effect of the dimensionality is examined by comparing results of 3D simulation w...

  13. Progress in MOCVD growth of HgCdTe epilayers for HOT infrared detectors

    Science.gov (United States)

    Kebłowski, A.; Gawron, W.; Martyniuk, P.; Stepień, D.; Kolwas, K.; Piotrowski, J.; Madejczyk, P.; Kopytko, M.; Piotrowski, A.; Rogalski, A.

    2016-05-01

    In this paper we present progress in MOCVD growth of (100) HgCdTe epilayers achieved recently at the Institute of Applied Physics, Military University of Technology and Vigo System S.A. It is shown that MOCVD technology is an excellent tool in fabrication of different HgCdTe detector structures with a wide range of composition, donor/acceptor doping and without post grown annealing. Particular progress has been achieved in the growth of (100) HgCdTe epilayers for long wavelength infrared photoconductors operated in HOT conditions. The (100) HgCdTe photoconductor optimized for 13-μm attain detectivity equal to 6.5x109 Jones and therefore outperform its (111) counterpart. The paper also presents technological progress in fabrication of MOCVD-grown (111) HgCdTe barrier detectors. The barrier device performance is comparable with state-of-the-art of HgCdTe photodiodes. The detectivity of HgCdTe detectors is close to the value marked HgCdTe photodiodes. Dark current densities are close to the values given by "Rule 07".

  14. Injection of electrons by colliding laser pulses in a laser wakefield accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Hansson, M., E-mail: martin.hansson@fysik.lth.se; Aurand, B.; Ekerfelt, H.; Persson, A.; Lundh, O.

    2016-09-01

    To improve the stability and reproducibility of laser wakefield accelerators and to allow for future applications, controlling the injection of electrons is of great importance. This allows us to control the amount of charge in the beams of accelerated electrons and final energy of the electrons. Results are presented from a recent experiment on controlled injection using the scheme of colliding pulses and performed using the Lund multi-terawatt laser. Each laser pulse is split into two parts close to the interaction point. The main pulse is focused on a 2 mm diameter gas jet to drive a nonlinear plasma wave below threshold for self-trapping. The second pulse, containing only a fraction of the total laser energy, is focused to collide with the main pulse in the gas jet under an angle of 150°. Beams of accelerated electrons with low divergence and small energy spread are produced using this set-up. Control over the amount of accelerated charge is achieved by rotating the plane of polarization of the second pulse in relation to the main pulse. Furthermore, the peak energy of the electrons in the beams is controlled by moving the collision point along the optical axis of the main pulse, and thereby changing the acceleration length in the plasma. - Highlights: • Compact colliding pulse injection set-up used to produce low energy spread e-beams. • Beam charge controlled by rotating the polarization of injection pulse. • Peak energy controlled by point of collision to vary the acceleration length.

  15. An atomic switch of electron propagation on Ge (001) by tunneling carrier injection

    Science.gov (United States)

    Komori, Fumio

    2008-03-01

    Reversible switching of electronic conduction through atom manipulation is one of the important subjects of nanoscience. However, different conducting pathways were not clearly observed with atomic resolution. We have demonstrated the correlation between the change of surface atomic position by tunneling carrier injection and that of the reflection of one-dimensional (1D) surface-state electrons on the Ge (001) surface with a low density of heterogeneous Sn-Ge dimers. [1] On the clean Ge(001) surface, two adjacent atoms form a buckled dimer, and the buckling orientation of the Ge dimer can be locally and reversibly controlled by carrier injection to the surface from the STM tip. [2] The unoccupied surface &*circ;-electron behaves like a 1D free electron along the Ge dimer row. When Sn atoms are deposited on the clean Ge(001) surface at room temperature, buckled dimers originating from the Sn atoms are formed at the Ge dimer position in the surface. [3] An atomic switch is realized for the &*circ; electrons in the Ge dimer- row direction by injection carriers to reversibly flip the buckling orientation of a single Sn-Ge dimer in the dimer row. When the Sn atom of the heterogeneous dimer is at the lower position, the 1D electrons are reflected and a standing wave of this state is observed. Whereas, when it is at the upper position, the 1D electrons pass through the heterogeneous dimer, and no standing wave is observed. In this state, the lower atom of the dimer is Ge, and the &*circ; state at the dimer is little different from that of the Ge-Ge dimers. [1] K. Tomatsu, K. Nakatsuji, T. Iimori, Y. Takagi, H. Kusuhara, A. Ishii, F. Komori; Science 315, 1696, 2007. [2] Y. Takagi, Y. Yoshimoto, K. Nakatsuji, F. Komori; Surf. Sci. 559, 1, 2004. [3] K. Tomatsu, K. Nakatsuji, T. Iimori, F. Komori; Surf. Sci. 601, 1736, 2007.

  16. Rare-earth neutral metal injection into an electron beam ion trap plasma

    Energy Technology Data Exchange (ETDEWEB)

    Magee, E. W., E-mail: magee1@llnl.gov; Beiersdorfer, P.; Brown, G. V. [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States); Hell, N. [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States); Dr. Remeis-Sternwarte and ECAP, Universität Erlangen-Nürnberg, 96049 Bamberg (Germany)

    2014-11-15

    We have designed and implemented a neutral metal vapor injector on the SuperEBIT high-energy electron beam ion trap at the Lawrence Livermore National Laboratory. A horizontally directed vapor of a europium metal is created using a thermal evaporation technique. The metal vapor is then spatially collimated prior to injection into the trap. The source's form and quantity constraints are significantly reduced making plasmas out of metal with vapor pressures ≤10{sup −7} Torr at ≥1000 °C more obtainable. A long pulsed or constant feed metal vapor injection method adds new flexibility by varying the timing of injection and rate of material being introduced into the trap.

  17. Flow injection fluorescence determination of dopamine using a photo induced electron transfer (PET) boronic acid derivative

    Energy Technology Data Exchange (ETDEWEB)

    Ebru Seckin, Z. [Department of Chemistry, Middle East Technical University, 06531 Ankara (Turkey); Volkan, Muervet [Department of Chemistry, Middle East Technical University, 06531 Ankara (Turkey)]. E-mail: murvet@metu.edu.tr

    2005-08-15

    An automated flow injection analysis system was developed for the fluorometric determination of dopamine in pharmaceutical injections. The method is based on the quenching effect of dopamine on m-dansylaminophenyl boronic acid (DAPB) fluorescence due to the reverse photo induced electron transfer (PET) mechanism. Effects of pH and interfering species on the determination of dopamine were examined. Calibration for dopamine, based on quenching data, was linear in the concentration range of 1.0 x 10{sup -5} to 1.0 x 10{sup -4} M. Detection limit (3 s) of the method was found to be 3.7 x 10{sup -6} M. Relative standard deviation of 1.2% (n = 10) was obtained with 1.0 x 10{sup -5} M dopamine standard solution. The proposed method was applied successfully for the determination of dopamine in pharmaceutical injection sample. The sampling rate was determined as 24 samples per hour.

  18. Distribution of separated energy and injected charge at normal falling of fast electron beam on target

    CERN Document Server

    Smolyar, V A; Eremin, V V

    2002-01-01

    In terms of a kinetic equation diffusion model for a beam of electrons falling on a target along the normal one derived analytical formulae for distributions of separated energy and injected charge. In this case, no empirical adjustable parameters are introduced to the theory. The calculated distributions of separated energy for an electron plate directed source within infinite medium for C, Al, Sn and Pb are in good consistency with the Spencer data derived on the basis of the accurate solution of the Bethe equation being the source one in assumption of a diffusion model, as well

  19. Theory of coherent molecule to surface electron injection: An analytical model

    Indian Academy of Sciences (India)

    S Ramakrishna; T Seideman; F Willig; V May

    2009-09-01

    Electron transfer from a molecular level to empty continuum levels of a substrate is described theoretically. Using a quasicontinuum approach to model the substrate, analytical expressions pertaining to the time-dependent probability among the various levels of the substrate is presented along with its extension to coherently excited molecular vibrational modes. Hidden time scales and dynamics are revealed in the analysis and possible experiments to observe the new results are suggested. We note the applicability of the model to the description of a variety of other phenomena that are formally similar to the electron injection problem, although pertaining to different physics.

  20. Organic Light Emitting Diodes with Lithium Contained Alq3 as Electron Injection Layer

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Novel lithium doped tris-8-hydroxylquinoline aluminium (Alq3:Li) layer is deposited between emission layer and electron injection aluminium electrode as an electron injection assistant layer in different organic light emitting diodes(OLED) to lower the electron injection barrier. In these devices, Alq3 is used as emission layer, and a bilayer film of N, N' -bis- ( 1-naphhyl)-N, N' -diphenyl- 1,1' -biphenyle-4,4" -diamine (NPB) and 4,4' , 4" -tris (3-methyl-phenylphenylamino) triphenylamine(m-MTDATA) used as hole transport layer(HTL). The electroluminescent performance of devices with different thicknesses of Alq3: Li shows that the insertion of the lithium doped Alq3 layer can reduce the turn on voltage by at least 2 volts, and the stability of devices with this lithium doped Alq3 layer is improved too. It can also change the efficiency of devices. Compared with an ultra-thin lithium fluoride(IiF) layer, Alq3 : Li sheet gives similar effects but higher efficiency and can be much thicker and hence it is easier to control the deposition.

  1. Potentiometric electronic tongue-flow injection analysis system for the monitoring of heavy metal biosorption processes.

    Science.gov (United States)

    Wilson, D; del Valle, M; Alegret, S; Valderrama, C; Florido, A

    2012-05-15

    An automated flow injection potentiometric (FIP) system with electronic tongue detection (ET) is used for the monitoring of biosorption processes of heavy metals on vegetable wastes. Grape stalk wastes are used as biosorbent to remove Cu(2+) ions in a fixed-bed column configuration. The ET is formed by a 5-sensor array with Cu(2+) and Ca(2+)-selective electrodes and electrodes with generic response to heavy-metals, plus an artificial neural network response model of the sensor's cross-response. The real-time monitoring of both the Cu(2+) and the cation exchanged and released (Ca(2+)) in the effluent solution is performed by using flow-injection potentiometric electronic tongue system. The coupling of the electronic tongue with automation features of the flow-injection system allows us to accurately characterize the Cu(2+) ion-biosorption process, through obtaining its breakthrough curves, and the profile of the Ca(2+) ion release. In parallel, fractions of the extract solution are analysed by spectroscopic techniques in order to validate the results obtained with the reported methodology. The sorption performance of grape stalks is also evaluated by means of well-established sorption models.

  2. Ultrafast phase transition via catastrophic phonon collapse driven by plasmonic hot-electron injection.

    Science.gov (United States)

    Appavoo, Kannatassen; Wang, Bin; Brady, Nathaniel F; Seo, Minah; Nag, Joyeeta; Prasankumar, Rohit P; Hilton, David J; Pantelides, Sokrates T; Haglund, Richard F

    2014-03-12

    Ultrafast photoinduced phase transitions could revolutionize data-storage and telecommunications technologies by modulating signals in integrated nanocircuits at terahertz speeds. In quantum phase-changing materials (PCMs), microscopic charge, lattice, and orbital degrees of freedom interact cooperatively to modify macroscopic electrical and optical properties. Although these interactions are well documented for bulk single crystals and thin films, little is known about the ultrafast dynamics of nanostructured PCMs when interfaced to another class of materials as in this case to active plasmonic elements. Here, we demonstrate how a mesh of gold nanoparticles, acting as a plasmonic photocathode, induces an ultrafast phase transition in nanostructured vanadium dioxide (VO2) when illuminated by a spectrally resonant femtosecond laser pulse. Hot electrons created by optical excitation of the surface-plasmon resonance in the gold nanomesh are injected ballistically across the Au/VO2 interface to induce a subpicosecond phase transformation in VO2. Density functional calculations show that a critical density of injected electrons leads to a catastrophic collapse of the 6 THz phonon mode, which has been linked in different experiments to VO2 phase transition. The demonstration of subpicosecond phase transformations that are triggered by optically induced electron injection opens the possibility of designing hybrid nanostructures with unique nonequilibrium properties as a critical step for all-optical nanophotonic devices with optimizable switching thresholds.

  3. Controlled Betatron X-Ray Radiation from Tunable Optically Injected Electrons

    CERN Document Server

    Corde, S; Fitour, R; Faure, J; Tafzi, A; Goddet, J P; Malka, V; Rousse, A

    2011-01-01

    The features of Betatron x-ray emission produced in a laser-plasma accelerator are closely linked to the properties of the relativistic electrons which are at the origin of the radiation. While in interaction regimes explored previously the source was by nature unstable, following the fluctuations of the electron beam, we demonstrate in this Letter the possibility to generate x-ray Betatron radiation with controlled and reproducible features, allowing fine studies of its properties. To do so, Betatron radiation is produced using monoenergetic electrons with tunable energies from a laser-plasma accelerator with colliding pulse injection [J. Faure et al., Nature (London) 444, 737 (2006)]. The presented study provides evidence of the correlations between electrons and x-rays, and the obtained results open significant perspectives toward the production of a stable and controlled femtosecond Betatron x-ray source in the keV range.

  4. Controlled Betatron X-ray radiation from tunable optically injected electrons

    CERN Document Server

    Corde, S; Fitour, R; Faure, J; Tafzi, A; Goddet, J P; Malka, V; Rousse, A

    2011-01-01

    The features of Betatron X-ray emission produced in a laser-plasma accelerator are closely linked to the properties of the relativistic electrons which are at the origin of the radiation. While in interaction regimes explored previously the source was by nature unstable, following the fluctuations of the electron beam, we demonstrate in this Letter the possibility to generate X-ray Betatron radiation with controlled and reproducible features, allowing fine studies of its properties. To do so, Betatron radiation is produced using monoenergetic electrons with tunable energies from a laser-plasma accelerator with colliding pulse injection [J. Faure et al., Nature (London), 444, 737 (2006)]. The presented study provides evidence of the correlations between electrons and X-rays, and the obtained results open significant perspectives toward the production of a stable and controlled femtosecond Betatron X-ray source in the keV range.

  5. Injection of electrons by colliding laser pulses in a laser wakefield accelerator

    Science.gov (United States)

    Hansson, M.; Aurand, B.; Ekerfelt, H.; Persson, A.; Lundh, O.

    2016-09-01

    To improve the stability and reproducibility of laser wakefield accelerators and to allow for future applications, controlling the injection of electrons is of great importance. This allows us to control the amount of charge in the beams of accelerated electrons and final energy of the electrons. Results are presented from a recent experiment on controlled injection using the scheme of colliding pulses and performed using the Lund multi-terawatt laser. Each laser pulse is split into two parts close to the interaction point. The main pulse is focused on a 2 mm diameter gas jet to drive a nonlinear plasma wave below threshold for self-trapping. The second pulse, containing only a fraction of the total laser energy, is focused to collide with the main pulse in the gas jet under an angle of 150°. Beams of accelerated electrons with low divergence and small energy spread are produced using this set-up. Control over the amount of accelerated charge is achieved by rotating the plane of polarization of the second pulse in relation to the main pulse. Furthermore, the peak energy of the electrons in the beams is controlled by moving the collision point along the optical axis of the main pulse, and thereby changing the acceleration length in the plasma.

  6. Growth, properties and applications of HgCdTe

    Science.gov (United States)

    Schmit, J. L.

    1983-12-01

    This paper provides primarily a review of the methods used to grow HgCdTe with a summary of some of its basic properties and applications. Methods of crystal growth fall generally into three classes: growth from the melt, from solution and from the vapor phase. All three methods have been and are being used to grow HgCdTe. The high vapor pressure of HgCdTe at the melting point, combined with a large segregation coefficient, have effectively limited the use of Czochralski or zone melting techniques, but two melt growth techniques have survived: (1) a variation of Bridgman growth called quench-anneal wherein a dendritic crystal is formed by quenching the melt and is homogenized by solid state recrystallization below the melting point, (2) a variation of freezing from a large volume called slush-growth wherein a melt is held in a temperature gradient for several weeks while a crystal grows. Growth from solution has taken the form of liquid phase epitaxy (LPE) on CdTe with the LPE systems including growth from Hg-rich, HgTe-rich and Te-rich solutions and using tipping, vertical dipping, vertical sliding and horizontal sliding. Vapor phase growth is very promising but is not yet in production. Techniques include growth by isothermal close spaced epitaxy in which HgTe is transported isothermally by chemical potential onto CdTe, molecular beam epitaxy (MBE) in which elements are evaporated in a high vacuum, and metal organic chemical vapor deposition (MOCVD) in which some of the metal atoms are carried to the substrate bound to organic radicals before being freed by pyrolysis. In all these methods, control of Hg pressure is a major concern. The fundamental properties discussed briefly are those of prime interest to detector manufacturers: energy gap ( Eg), intrinsic carrier concentration ( ni), and electrical activity of dopants. A reasonable fit to the Eg data from ˜ 20 papers is given by Eg = -0.302+1.93x+5.35×10 -4T(1-2x)-0.810x 2+0.832x 3. This gap, combined with k

  7. Numerical Study of Injection Mechanisms for Generation of Mono-Energetic Femtosecond Electron Bunch from the Plasma Cathode

    CERN Document Server

    Ohkubo, Takeru; Zhidkov, Alexei

    2005-01-01

    Acceleration gradients of up to the order of 100GV/m and mono-energetic electron bunch up to 200MeV have recently been observed in several plasma cathode experiments. However, mechanisms of self-injection in plasma are not sufficiently clarified, presently. In this study, we carried out 2D PIC simulation to reveal the mechanisms of mono-energetic femtosecond electron bunch generation. We found two remarkable conditions for the generation: electron density gradient at vacuum-plasma interface and channel formation in plasma. Steep electron density gradient (~ plasma wave length) causes rapid injection and produces an electron bunch with rather high charge and less than 100fs duration. The channel formation guides an injected laser pulse and decreases the threshold of laser self-focusing, which leads to high electric field necessary for wave-breaking injection.

  8. Doping and Diffusion in HgCdTe

    Science.gov (United States)

    1991-01-28

    In’i, -InT. Te - 1.8 ( - 3 .5 )h ( + 2.9 - 6/) TeT1’- Tej . 4 Hg rich HgCdTe Hg - 1.8 + 1.2 + 1.4 - 2p H - ’g, - H g j.. ’TI - tetrahedral position...A. Anderson, Appl. Phys. Lett. 53, 11.81 (1988). B. D. Patterson, Rev. Mod. Phys. 60, 69 (1988). 60 V. A. Singh , C. Weigel, J. W. Corbett, and L. M

  9. Crystal Growth of Solid Solution HgCdTe Alloys

    Science.gov (United States)

    Lehoczky, Sandor L.

    1997-01-01

    The growth of homogenous crystals of HgCdTe alloys is complicated by the large separation between their liquidus and solidus temperatures. Hg(1-x)Cd(x)Te is representative of several alloys which have electrical and optical properties that can be compositionally tuned for a number of applications. Limitations imposed by gravity during growth and results from growth under reduced conditions are described. The importance of residual accelerations was demonstrated by dramatic differences in compositional distribution observed for different attitudes of the space shuttle that resulted in different steady acceleration components.

  10. Hot electrons injection in carbon nanotubes under the influence of quasi-static ac-field

    Science.gov (United States)

    Amekpewu, M.; Mensah, S. Y.; Musah, R.; Mensah, N. G.; Abukari, S. S.; Dompreh, K. A.

    2016-07-01

    The theory of hot electrons injection in carbon nanotubes (CNTs) where both dc electric field (Ez), and a quasi-static ac field exist simultaneously (i.e. when the frequency ω of ac field is much less than the scattering frequency v (ω ≪ v or ωτ ≪ 1, v =τ-1) where τ is relaxation time) is studied. The investigation is done theoretically by solving semi-classical Boltzmann transport equation with and without the presence of the hot electrons source to derive the current densities. Plots of the normalized current density versus dc field (Ez) applied along the axis of the CNTs in the presence and absence of hot electrons reveal ohmic conductivity initially and finally negative differential conductivity (NDC) provided ωτ ≪ 1 (i.e. quasi- static case). With strong enough axial injection of the hot electrons, there is a switch from NDC to positive differential conductivity (PDC) about Ez ≥ 75 kV / cm and Ez ≥ 140 kV / cm for a zigzag CNT and an armchair CNT respectively. Thus, the most important tough problem for NDC region which is the space charge instabilities can be suppressed due to the switch from the NDC behaviour to the PDC behaviour predicting a potential generation of terahertz radiations whose applications are relevance in current-day technology, industry, and research.

  11. Injection of electrons by colliding laser pulses in a laser wakefield accelerator

    CERN Document Server

    Hansson, Martin; Ekerfelt, Henrik; Persson, Anna; Lundh, Olle

    2016-01-01

    To improve the stability and reproducibility of laser wakefield accelerators and to allow for future applications, controlling the injection of electrons is of great importance. This allows us to control the amount of charge in the beams of accelerated electrons and final energy of the electrons. Results are presented from a recent experiment on controlled injection using the scheme of colliding pulses and performed using the Lund multi-terawatt laser. Each laser pulse is split into two parts close to the interaction point. The main pulse is focused on a 2 mm diameter gas jet to drive a nonlinear plasma wave below threshold for self-trapping. The second pulse, containing only a fraction of the total laser energy, is focused to collide with the main pulse in the gas jet under an angle of 150°. Beams of accelerated electrons with low divergence and small energy spread are produced using this set-up. Control over the amount of accelerated charge is achieved by rotating the plane of polarization of the second p...

  12. Calcium chloride electron injection/extraction layers in organic electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Qu, Bo, E-mail: bqu@pku.edu.cn, E-mail: qhgong@pku.edu.cn; Gao, Zhi; Yang, Hongsheng; Xiao, Lixin; Chen, Zhijian; Gong, Qihuang, E-mail: bqu@pku.edu.cn, E-mail: qhgong@pku.edu.cn [State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China)

    2014-01-27

    Nontoxic calcium chloride (CaCl{sub 2}) was introduced into organic electronic devices as cathode buffer layer (CBL). The turn-on voltage and maximum luminance of organic light-emitting diode (OLED) with 1.5 nm CaCl{sub 2} was 3.5 V and 21 960 cd/m{sup 2}, respectively. OLED with 1.5 nm CaCl{sub 2} possessed comparable electroluminescent characteristics to that of the commonly used LiF. Moreover, the performance of the organic photovoltaic device with 0.5 nm CaCl{sub 2} was comparable to that of the control device with LiF. Therefore, CaCl{sub 2} has the potential to be used as the CBL for organic electronic devices.

  13. Morphologic alterations in rat brain following systemic and intraventricular methotrexate injection: light and electron microscopic studies.

    Science.gov (United States)

    Gregorios, J B; Gregorios, A B; Mora, J; Marcillo, A; Fojaco, R M; Green, B

    1989-01-01

    To determine the morphological substrate of acute methotrexate (MTX) encephalopathy, light and electron microscopic studies were performed on rat brains after short-term intraperitoneal (IP) and intraventricular (IV) injections of MTX. In both models, Alzheimer type II astrocytosis was the initial and major pathologic alteration seen by light microscopy. The neurons, oligodendrocytes, myelin and endothelial cells were relatively spared. Ultrastructural studies showed pleomorphism and condensation of mitochondria, membrane-bound vacuoles, prominent stacks of sparsely granular, rough endoplasmic reticulum and progressive hydropic swelling of astrocytic perikarya and their processes. The astroglial alterations were reversible after cessation of the drug but persisted for a longer time with repeated IP administration. Gastrointestinal complications and overall mortality were also greater with higher doses and increasing frequency of IP MTX injection. White matter necrosis was noted only after IV injection of high-dose MTX. The neuropathologic changes of MTX leukoencephalopathy can be replicated in an animal model by IV injection of the drug. The reversibility of the changes that were seen following IP administration correlates with the transient neurologic deficits observed in some patients after high-dose systemic MTX therapy. The initially selective astroglial effect suggests that astrocytes might be a target for MTX toxicity, although other central nervous system components may also be adversely affected by the drug.

  14. Electron Temperature Evolution During Local Helicity Injection on the Pegasus Toroidal Experiment

    Science.gov (United States)

    Schlossberg, D. J.; Barr, J. L.; Bodner, G. M.; Bongard, M. W.; Fonck, R. J.; Perry, J. M.; Reusch, J. A.; Rodriguez Sanchez, C.

    2016-10-01

    Understanding the electron temperature (Te) evolution during local helicity injection (LHI) is critical for scaling up this non-solenoidal startup technique to MA-class devices. The first comprehensive Te measurements during LHI reveal centrally-peaked profiles with Te > 100 eV for plasma current Ip > 120 kA, toroidal field 0.15 T, and electron density ne 1019 m-3. Te rises and is sustained from just after magnetic relaxation through the plasma decoupling from edge-localized injectors. Results are presented for two injector edge locations: outboard midplane and inboard divertor. Outboard midplane injection couples LHI with inductive drive from poloidal field ramps and radial compression during inward plasma growth. Comparisons of Te at different LHI-to-inductive drive ratios show some profile flattening for higher LHI drive fraction. The latter, constant-shape discharges were necessarily lower performance, with Ip 50 kA and reduced Te , max. Inboard divertor injection achieves higher Ip using minimal inductive drive and thus isolates effects of LHI drive on Te. Initial results in this configuration show Te rising rapidly at the injector location as the discharge grows, settling to a roughly flat profile 100 eV. Thus far, both scenarios provide relatively stable discharges with moderate ne and high-Te, suitable for coupling to auxiliary current drive. Detailed studies of confinement dynamics and discharge optimization are planned for the near future. Work supported by US DOE Grant DE-FG02-96ER54375.

  15. Electron beam manipulation, injection and acceleration in plasma wakefield accelerators by optically generated plasma density spikes

    Energy Technology Data Exchange (ETDEWEB)

    Wittig, Georg; Karger, Oliver S.; Knetsch, Alexander [Institute of Experimental Physics, University of Hamburg, 22761 Hamburg (Germany); Xi, Yunfeng; Deng, Aihua; Rosenzweig, James B. [Particle Beam Physics Laboratory, UCLA, Los Angeles, CA 90095 (United States); Bruhwiler, David L. [RadiaSoft LLC, Boulder, CO 80304 (United States); RadiaBeam Technologies LLC (United States); Smith, Jonathan [Tech-X UK Ltd, Daresbury, Cheshire WA4 4FS (United Kingdom); Sheng, Zheng-Ming; Jaroszynski, Dino A.; Manahan, Grace G. [Physics Department, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom); Hidding, Bernhard [Institute of Experimental Physics, University of Hamburg, 22761 Hamburg (Germany); Physics Department, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

    2016-09-01

    We discuss considerations regarding a novel and robust scheme for optically triggered electron bunch generation in plasma wakefield accelerators [1]. In this technique, a transversely propagating focused laser pulse ignites a quasi-stationary plasma column before the arrival of the plasma wake. This localized plasma density enhancement or optical “plasma torch” distorts the blowout during the arrival of the electron drive bunch and modifies the electron trajectories, resulting in controlled injection. By changing the gas density, and the laser pulse parameters such as beam waist and intensity, and by moving the focal point of the laser pulse, the shape of the plasma torch, and therefore the generated trailing beam, can be tuned easily. The proposed method is much more flexible and faster in generating gas density transitions when compared to hydrodynamics-based methods, and it accommodates experimentalists needs as it is a purely optical process and straightforward to implement.

  16. Electron beam manipulation, injection and acceleration in plasma wakefield accelerators by optically generated plasma density spikes

    Science.gov (United States)

    Wittig, Georg; Karger, Oliver S.; Knetsch, Alexander; Xi, Yunfeng; Deng, Aihua; Rosenzweig, James B.; Bruhwiler, David L.; Smith, Jonathan; Sheng, Zheng-Ming; Jaroszynski, Dino A.; Manahan, Grace G.; Hidding, Bernhard

    2016-09-01

    We discuss considerations regarding a novel and robust scheme for optically triggered electron bunch generation in plasma wakefield accelerators [1]. In this technique, a transversely propagating focused laser pulse ignites a quasi-stationary plasma column before the arrival of the plasma wake. This localized plasma density enhancement or optical "plasma torch" distorts the blowout during the arrival of the electron drive bunch and modifies the electron trajectories, resulting in controlled injection. By changing the gas density, and the laser pulse parameters such as beam waist and intensity, and by moving the focal point of the laser pulse, the shape of the plasma torch, and therefore the generated trailing beam, can be tuned easily. The proposed method is much more flexible and faster in generating gas density transitions when compared to hydrodynamics-based methods, and it accommodates experimentalists needs as it is a purely optical process and straightforward to implement.

  17. Conditions for space-charge reversal at thermionic heterojunctions designed for ballistic electron injection

    Science.gov (United States)

    Al-Omar, A.; Krusius, J. Peter

    1988-02-01

    Semiconductor heterojunctions (HJs) have been used as injectors for ballistic electrons in high-speed devices. Here it is found that the charge state of the HJ has a significant influence on the ballistic electron injection process. The Al(x)Ga(1-x)As/GaAs HJ is used as the demonstration system. A self-consistent ensemble Monte Carlo formulation has been employed in the quantitative calculations, and a simple model is used as an intuitive explanation. The state of the narrow-gap semiconductor can be changed from accumulation to depletion with one or several of the following: applied voltage, temperature, or Al mole fraction. The ballistic electron fraction can vary by a factor of 3 depending on this space charge.

  18. Injection method of barrier bucket supported by misaligned electron cooling for CRing

    CERN Document Server

    Shen, Guo-Dong; Xia, Jia-Wen; Mao, Li-Jun; Yin, Da-Yu; Chai, Wei-Ping; Shi, Jian; Sheng, Li-Na; Smirnov, A; Wu, Bo; Zhao, He

    2016-01-01

    A new accelerator complex HIAF (the High Intensity Heavy Ion Accelerator Facility) is approved in China. It is designed to provide intense primary and radioactive ion beams for researches in high energy density physics, nuclear physics, atomic physics as well as other applications. In order to achieve a high intensity up to 5e11ppp 238U34+, CRing needs to stack more than 5 bunches transferred from BRing. However, the normal bucket to bucket injection scheme can only achieve an intensity gain of 2, so an injection method, fixed barrier bucket (BB) supported by electron cooling, is proposed. To suppress the severe space charge effect during the stacking process, misalignment is adopted in the cooler to control the transverse emittance. In this paper the simulation and optimization with BETACOOL program are presented.

  19. Injection method of barrier bucket supported by off-aligned electron cooling for CRing of HIAF

    Science.gov (United States)

    Shen, Guo-Dong; Yang, Jian-Cheng; Xia, Jia-Wen; Mao, Li-Jun; Yin, Da-Yu; Chai, Wei-Ping; Shi, Jian; Sheng, Li-Na; Smirnov, A.; Wu, Bo; Zhao, He

    2016-08-01

    A new accelerator complex, HIAF (the High Intensity Heavy Ion Accelerator Facility), has been approved in China. It is designed to provide intense primary and radioactive ion beams for research in high energy density physics, nuclear physics, atomic physics as well as other applications. In order to achieve a high intensity of up to 5×1011 ppp 238U34+, the Compression Ring (CRing) needs to stack more than 5 bunches transferred from the Booster Ring (BRing). However, the normal bucket to bucket injection scheme can only achieve an intensity gain of 2, so an injection method, fixed barrier bucket (BB) supported by electron cooling, is proposed. To suppress the severe space charge effect during the stacking process, off-alignment is adopted in the cooler to control the transverse emittance. In this paper, simulation and optimization with the BETACOOL program are presented. Supported by New Interdisciplinary and Advanced Pilot Fund of Chinese Academy of Sciences

  20. ReO{sub x} charge injection/blocking layers in organic electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Luo Jiaxiu; Xiao Lixin; Chen Zhijian; Qu Bo; Gong Qihuang, E-mail: xiao66@pku.edu.c, E-mail: qhgong@pku.edu.c [State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871 (China)

    2010-09-29

    The charge transport of rhenium oxide (ReO{sub x}) in organic electronic devices was investigated. The hole injection/transport was blocked and the electron injection/transport was enhanced with doping of ReO{sub x} in organic electronic devices. Thus the charge balance and efficiency of organic light-emitting diodes were improved; current efficiency of 2.7 cd A{sup -1} at 20 mA cm{sup -2} for the device with ReO{sub x} was higher than 1.5 cd A{sup -1} for the device without it. In the case of organic photovoltaic cells, the open-circuit voltage (V{sub oc}), 0.58 V, was higher compared with the device without ReO{sub x} (0.44 V) due to the improvement of interface properties. The power conversion efficiency was increased to 2.27% by the combination of ReO{sub x} (increases V{sub oc}) with poly(3,4-ethylenedioxythiophene) : poly(styrene-sulfonate) (improves hole transport to increase J{sub sc}) on the modification of the anode, higher than 1.85% for the device without ReO{sub x}.

  1. Simulation of runaway electron generation during plasma shutdown by impurity injection

    Energy Technology Data Exchange (ETDEWEB)

    Feher, Tamas

    2011-03-15

    Disruptions are dangerous instabilities in tokamaks that should be avoided or mitigated. One possible disruption mitigation method is to inject impurities into the plasma to shut it down in a controlled way. Runaway Electrons (REs) can be generated after the plasma is cooled down by the impurities and these electrons can damage the tokamak. In this work a simulation code is developed to investigate different disruption mitigation scenarios. The response of the bulk plasma, more precisely the temperature evolution of electrons, deuterium and impurity ions are described by energy balance equations in a 1D cylindrical plasma model. The induction and resistive diffusion of electric field is calculated. RE generation rates are used to calculate the runaway current. The Dreicer, hot-tail and avalanche effect is taken into account and a simple model for RE losses is also included. RE generation is studied in JET-like plasmas during pellet injection. Carbon pellets cause effective cooling but these scenarios are prone to runaway generation. A mixture of argon and deuterium gas could be used for safe shutdown without RE generation. In ITER the hot-tail RE generation process becomes important, and the simulation is therefore extended to take this into account. Shutdown scenarios with different concentration of neon and argon impurities were tested in ITER-like plasmas. To simplify the problem the impurity injection into the plasma is not modeled in these cases, only the response of the bulk plasma. The avalanche process cannot be suppressed in a simple way and would produce high runaway current. It can be avoided if some runaway loss phenomenon is included in the simulations, like diffusion due to magnetic perturbations

  2. All-organic sulfonium salts acting as efficient solution processed electron injection layer for PLEDs.

    Science.gov (United States)

    Georgiadou, Dimitra G; Vasilopoulou, Maria; Palilis, Leonidas C; Petsalakis, Ioannis D; Theodorakopoulos, Giannoula; Constantoudis, Vassilios; Kennou, Stella; Karantonis, Antonis; Dimotikali, Dimitra; Argitis, Panagiotis

    2013-12-11

    Herein we introduce the all-organic triphenylsulfonium (TPS) salts cathode interfacial layers (CILs), deposited from their methanolic solution, as a new simple strategy for circumventing the use of unstable low work function metals and obtaining charge balance and high electroluminescence efficiency in polymer light-emitting diodes (PLEDs). In particular, we show that the incorporation of TPS-triflate or TPS-nonaflate at the polymer/Al interface improved substantially the luminous efficiency of the device (from 2.4 to 7.9 cd/A) and reduced the turn-on and operating voltage, whereas an up to 4-fold increase in brightness (∼11 250 cd/m(2) for TPS-triflate and ∼14 682 cd/m(2) for TPS-nonaflate compared to ∼3221 cd/m(2) for the reference device) was observed in poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(1,4-benzo-2,1',3-thiadiazole)] (F8BT)-based PLEDs. This was mainly attributed to the favorable decrease of the electron injection barrier, as derived from the open-circuit voltage (Voc) measurements, which was also assisted by the conduction of electrons through the triphenylsulfonium salt sites. Density functional theory calculations indicated that the total energy of the anionic (reduced) form of the salt, that is, upon placing an electron to its lowest unoccupied molecular orbital, is lower than its neutral state, rendering the TPS-salts stable upon electron transfer in the solid state. Finally, the morphology optimization of the TPS-salt interlayer through controlling the processing parameters was found to be critical for achieving efficient electron injection and transport at the respective interfaces.

  3. Generation mechanism of whistler waves produced by electron beam injection in space

    Science.gov (United States)

    Pritchett, P. L.; Karimabadi, H.; Omidi, N.

    1989-01-01

    Electromagnetic particle simulations are used to determine the generation mechanism of the whistler waves observed in connection with the artificial injection of electron beams in the ionosphere. The production of the waves is shown to be closely connected with the beam-plasma interaction, which leads to the formation of a current structure which acts like an antenna and emits the whistler waves in a coherent manner. This process, in contrast to a mechanism involving amplification of radiation by a whistler mode plasma instability within the beam, allows the whistlers to be generated even though the beam width is less than one wavelength.

  4. Potentiometric electronic tongue-flow injection analysis system for the monitoring of heavy metal biosorption processes

    OpenAIRE

    2012-01-01

    An automated flow injection potentiometric (FIP) system with electronic tongue detection (ET) is used for the monitoring of biosorption processes of heavy metals on vegetable wastes. Grape stalk wastes are used as biosorbent to remove Cu2+ ions in a fixed-bed column configuration. The ET is formed by a 5-sensor array with Cu2+ and Ca2+-selective electrodes and electrodes with generic response to heavy-metals, plus an artificial neural network response model of the sensor's cross-response. The...

  5. Liquid metal ion source assembly for external ion injection into an electron string ion source (ESIS)

    Energy Technology Data Exchange (ETDEWEB)

    Segal, M. J., E-mail: mattiti@gmail.com [iThemba LABS, P.O. Box 722, Somerset West 7130 (South Africa); University of Cape Town, Rondebosch, Cape Town 7700 (South Africa); Bark, R. A.; Thomae, R. [iThemba LABS, P.O. Box 722, Somerset West 7130 (South Africa); Donets, E. E.; Donets, E. D.; Boytsov, A.; Ponkin, D.; Ramsdorf, A. [Joint Institute for Nuclear Research, Joloit-Curie 6, 141980 Dubna, Moscow Region (Russian Federation)

    2016-02-15

    An assembly for a commercial Ga{sup +} liquid metal ion source in combination with an ion transportation and focusing system, a pulse high-voltage quadrupole deflector, and a beam diagnostics system has been constructed in the framework of the iThemba LABS (Cape Town, South Africa)—JINR (Dubna, Russia) collaboration. First, results on Ga{sup +} ion beam commissioning will be presented. Outlook of further experiments for measurements of charge breeding efficiency in the electron string ion source with the use of external injection of Ga{sup +} and Au{sup +} ion beams will be reported as well.

  6. ROIC with on-chip sigma-delta AD converter for HgCdTe e-APD FPA

    Science.gov (United States)

    Chen, Guoqiang; Zhang, Junling; Wang, Pan; Zhou, Jie; Gao, Lei; Ding, Ruijun

    2013-10-01

    HgCdTe electron injection avalanche photodiodes (e-APDs) work at linear mode. A weak optical current signal is amplified orders of magnitude due to the internal avalanche mechanism and it has been demonstrated to be one of the most promising methods to focal-plane arrays (FPAs) for low-flux like hyper-spectral imaging and high-speed applications such as active imaging. This paper presents the design of a column-shared ADC for cooled e-APDs FPA. Designing a digital FPA requires fulfilling very stringent requirements in terms of power consumption, silicon area and speed. Among the various ADC architectures sigma-delta conversion is a promising solution for high-performance and medium size FPA such as 128×128. The performance of Sigma-delta ADC rather relies on the modulator structure which set over-sampling and noise shaping characteristics than on critical analog circuits. This makes them quite robust and flexible. A multistage noise shaping (MASH) 2-1 single bit architecture sigma-delta conversion with switched-capacitor circuits is designed for column-shared ADC, which is implanted in the GLOBALFOUNDRIES 0.35um CMOS process with 4-poly and 4-metal on the basis of a 100um pixel pitch. It operates under 3.3V supply and the output range of the quantizer is 2V. A quantization noise subtraction circuit in modulator is designed to subtract the quantization noise of first-stage modulator. The quantization noise of the modulator is shaped by a high-pass filter. The silicon area and power consumption are mainly determined by the decimation low pass filter. A cascaded integrator-comb (CIC) filter is designed as the digital decimator filter. CIC filter requires no multipliers and use limited storage thereby leading to more economical hardware implementation. The register word length of the filter in each stage is carefully dimensioned in order to minimize the required hardware. Furthermore, the digital filters operate with a reduced supply voltage to 1.5V. Simulation

  7. Temporal characterization of ultrashort ionization-injected electron bunches generated from a laser wakefield accelerator

    CERN Document Server

    Zhang, C J; Wan, Y; Guo, B; Pai, C -H; Wu, Y P; Li, F; Chu, H -H; Gu, Y Q; Mori, W B; Joshi, C; Wang, J; Lu, W

    2016-01-01

    A new concept to diagnose the temporal characteristics of ultrashort electron bunches generated from a laser wakefield accelerator is described. When the ionization-injected bunch interacts with the back of the drive laser it is deflected and stretched along the direction of the electric field of the laser. Upon exiting the plasma if the bunch goes through a narrow slit in front of the dipole magnet that disperses the electrons in the plane of the laser polarization, it can form a series of bunchlets that have different energies but separated by half a laser wavelength. By analyzing the modulated energy spectrum, the beam current profile and the longitudinal (energy versus time) phase space are recovered. This concept is demonstrated through particle-in-cell simulations and experiment.

  8. Use of sequential injection analysis to construct an electronic-tongue

    Energy Technology Data Exchange (ETDEWEB)

    Calvo, Daniel [Sensors and Biosensors Group, Department of Chemistry, Autonomous University of Barcelona, Edifici Cn, 08193 Bellaterra, Barcelona (Spain); Duran, Alejandro [Materials and Reactants Institute, Havanna University, Havanna (Cuba); Valle, Manel del [Sensors and Biosensors Group, Department of Chemistry, Autonomous University of Barcelona, Edifici Cn, 08193 Bellaterra, Barcelona (Spain)], E-mail: manel.delvalle@uab.es

    2007-09-26

    An electronic tongue based on the transient response of an array of non-specific-response potentiometric sensors was developed. A sequential injection analysis (SIA) system was used in order to automate its training and operation. The use of the transient recording entails the dynamic nature of the sensor's response, which can be of high information content, of primary ions and also of interfering ions; these may better discriminated if the kinetic resolution is added. This work presents the extraction of significant information contained in the transient response of a sensor array formed by five all-solid-state potentiometric sensors. The tool employed was the Fourier transform, from which a number of coefficients were fed into an artificial neural network (ANN) model, used to perform a quantitative multidetermination. The studied case was the analysis of mixtures of calcium, sodium and potassium. Obtained performance is compared with the more traditional automated electronic tongue using final steady-state potentials.

  9. Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electrons

    Energy Technology Data Exchange (ETDEWEB)

    Bory, Benjamin F.; Janssen, René A. J.; Meskers, Stefan C. J., E-mail: s.c.j.meskers@tue.nl [Molecular Materials and Nanosystems and Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Rocha, Paulo R. F.; Gomes, Henrique L. [Instituto de Telecomunicações, Av. Rovisco, Pais, 1, 1049 – 001, Lisboa, Portugal and Universidade do Algarve, Campus de Gambelas, 8005-139 Faro (Portugal); De Leeuw, Dago M. [Max-Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany and King Abdulaziz University, Jeddah (Saudi Arabia)

    2014-09-22

    Thin LiF interlayers are typically used in organic light-emitting diodes to enhance the electron injection. Here, we show that the effective work function of a contact with a LiF interlayer can be either raised or lowered depending on the history of the applied bias. Formation of quasi-Ohmic contacts for both electrons and holes is demonstrated by electroluminescence from symmetric LiF/polymer/LiF diodes in both bias polarities. The origin of the dynamic switching is charging of electrically induced Frenkel defects. The current density–electroluminescence–voltage characteristics can qualitatively be explained. The interpretation is corroborated by unipolar memristive switching and by bias dependent reflection measurements.

  10. Multi-color IRFPAs made from HgCdTe grown by MOVPE

    Science.gov (United States)

    Jones, C. L.; Hipwood, L. G.; Price, J.; Shaw, C. J.; Abbott, P.; Maxey, C. D.; Lau, H. W.; Catchpole, R. A.; Ordish, M.; Knowles, P.; Gordon, N. T.

    2007-04-01

    The drive towards improved target recognition has led to an increasing interest in detection in more than one infrared band. This paper describes the design, fabrication and performance of two-colour and three-colour infrared detectors made from HgCdTe grown by Metal Organic Vapour Phase Epitaxy (MOVPE). The detectors are staring, focal plane arrays consisting of HgCdTe mesa-diode arrays bump bonded to silicon read-out integrated circuits (ROICs). Each mesa diode has one connection to the ROIC and the colours are selected by varying the applied bias. Results will be presented for both two-colour and three-colour devices. In a two-colour n-p-n design the cut-off wavelengths are defined by the compositions of the two n-type absorbers and the doping and composition of the p-type layer are chosen to prevent transistor action. The bias polarity is used to switch the output between colours. This design has been used to make MW/LW detectors with a MW band covering 3 to 5 μm and a LW band covering 5 to 10 μm. In a three-colour n-p-n design the cut-off wavelengths are defined by the compositions of the two n-type absorbers and the p-type absorber, which has an intermediate cut-off wavelength. The absorbers are separated from each other by electronic barriers consisting of wide band-gap material. At low applied bias these barriers prevent photo-electrons generated in the p-type absorber from escaping and the device then gives an output from one of the n-type absorbers. At high applied bias the electronic barrier is pulled down and the device gives an output from both the p-type absorber and one of the n-type absorbers. Thus by varying the polarity and magnitude of the bias it is possible to obtain three-colours from a two-terminal device. This design has been used to make a SW/MW/MW detector with cut-off wavelengths of approximately 3, 4 and 6 μm.

  11. Enhancing Carrier Injection Using Graded Superlattice Electron Blocking Layer for UVB Light-Emitting Diodes

    KAUST Repository

    Janjua, Bilal

    2014-12-01

    We have studied enhanced carrier injection by having an electron blocking layer (EBL) based on a graded superlattice (SL) design. Here, we examine, using a selfconsistent 6 × 6 k.p method, the energy band alignment diagrams under equilibrium and forward bias conditions while also considering carrier distribution and recombination rates (Shockley-Read-Hall, Auger, and radiative recombination rates). The graded SL is based on AlxGa1-xN (larger bandgap) Al0:5Ga0:5N (smaller bandgap) SL, where x is changed from 0.8 to 0.56 in steps of 0.06. Graded SL was found to be effective in reducing electron leakage and enhancing hole injection into the active region. Due to our band engineering scheme for EBL, four orders-of-magnitude enhancement were observed in the direct recombination rate, as compared with the conventional bulk EBL consisting of Al0:8Ga0:2N. An increase in the spatial overlap of carrier wavefunction was obtained due to polarization-induced band bending in the active region. An efficient single quantum-well ultraviolet-B light-emitting diode was designed, which emits at 280 nm. This is the effective wavelength for water disinfection application, among others.

  12. Characteristics of HgCdTe epilayer grown by LPE using horizontal slider

    Indian Academy of Sciences (India)

    J K Radhakrishnan; S Sitharaman; S C Gupta

    2002-11-01

    The characteristics of HgCdTe epilayers grown in a modified horizontal slider system, are reported here. The surface morphology of the grown layers, their IR transmission characteristics, depth and lateral compositional uniformity, structural and electrical characteristics are discussed.

  13. Ultra-low Noise, High Bandwidth, 1550nm HgCdTe APD Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Voxtel Inc. proposes to optimize the design of a large area, 1.55?m sensitive HgCdTe avalanche photodiode (APD) that achieves high gain with nearly no excess noise....

  14. Engineering steps for optimizing high temperature LWIR HgCdTe photodiodes

    Science.gov (United States)

    Madejczyk, Pawel; Gawron, Waldemar; Martyniuk, Piotr; Keblowski, Artur; Pusz, Wioletta; Pawluczyk, Jaroslaw; Kopytko, Malgorzata; Rutkowski, Jaroslaw; Rogalski, Antoni; Piotrowski, Jozef

    2017-03-01

    The authors report on energy gap engineering solutions to improve the high-temperature performance of long-wave infrared (LWIR) HgCdTe photodiodes. Metalorganic chemical vapour deposition (MOCVD) technology with a wide range of composition and donor/acceptor doping and without ex-situ post grown annealing seems to be an excellent tool for HgCdTe heterostructure epitaxial growth. The heterojunction HgCdTe photovoltaic device based on epitaxial graded gap structures integrated with Auger-suppression is a magnificent solution for high operating temperature (HOT) infrared detectors. The thickness, composition and doping of HgCdTe heterostructure were optimized with respect to photoelectrical parameters like dark current, the responsivity and the response time. In this paper we focus on graded interface abruptness in the progressive optimization.

  15. Cosmic-Ray Electron Excess from Pulsars is Spiky or Smooth?: Continuous and Multiple Electron/Positron injections

    CERN Document Server

    Kawanaka, Norita; Nojiri, Mihoko M

    2009-01-01

    We investigate the observed spectrum of cosmic-ray electrons and positrons from astrophysical sources, especially pulsars, and the physical processes for making the spectrum spiky or smooth via continuous and multiple cosmic-ray injections. We find that (1) the average spectrum with the local birth rate of pulsars (including the off-axis ones) is relatively smooth, consistent with the PAMELA data, but requires an energetic source for the ATIC/PPB-BETS peak. Such a source should not occur repeatedly at the same rate. (2) A continuous injection produces a broad peak and a high energy tail above the peak, which can constrain the source duration ($\\lesssim 10^5$yr with the current data). (3) The H.E.S.S. data in the TeV range suggest that young sources with age less than $\\sim 3 \\times 10^4$yr are an order-of-magnitude less energetic than the average. (4) We also expect a large dispersion in the TeV spectrum due to the small number of sources, that is potentially a smoking-gun for the astrophysical origin. These ...

  16. MBE Growth and Transfer of HgCdTe Epitaxial Films from InSb Substrates

    Science.gov (United States)

    de Lyon, T. J.; Rajavel, R. D.; Nosho, B. Z.; Terterian, S.; Beliciu, M. L.; Patterson, P. R.; Chang, D. T.; Boag-O'Brien, M. F.; Holden, B. T.; Jacobs, R. N.; Benson, J. D.

    2010-07-01

    An investigation of the heteroepitaxial growth of HgCdTe films onto InSb(211)B substrates is reported. High-quality HgCdTe(211)B single-crystal films have been successfully deposited onto InSb(211)B substrates and have been characterized with x-ray diffraction rocking curve analysis, etch pit density analysis, and surface void defect mapping. X-ray rocking curve (422) reflection full-width at half-maximum of 60 arcsec has been obtained for 7- μm-thick x = 0.22 HgCdTe epitaxial films, and etch pit densities of 3 × 106 cm-2 to 3 × 107 cm-2 have been observed. A significant reduction in HgCdTe void defect densities to 100 cm-2 to 200 cm-2 has been observed on InSb, including a complete absence of large “void cluster” defects that are often observed for growth on CdZnTe. Wafer bow induced by the growth of HgCdTe on InSb is less than 1 μm for 2-inch-diameter substrates. Significant diffusion of In into HgCdTe is observed for HgCdTe/InSb wafers that are subjected to Hg anneals at 250°C to 300°C. A preliminary investigation of the transfer of HgCdTe films from InSb onto Si substrates has also been undertaken, using an adhesive wafer bonding approach evaluated with scanning acoustic microscopy. The infrared transmission characteristics of the bonding adhesive have been investigated with respect to postgrowth annealing procedures to establish the compatibility of the bonding approach with HgCdTe device processing and detector operation.

  17. Minority carrier lifetimes in different doped LWIR HgCdTe grown by LPE

    Science.gov (United States)

    Qiu, GuangYin; Wei, YanFeng; Sun, QuanZhi; Yang, JianRong

    2012-10-01

    The carrier lifetimes of different types of p-type doped HgCdTe(x~0.23) long wavelength infrared (LWIR) epilayers were measured which were Hg-vacancy, Au and arsenic doped ones prepared by Te-rich Liquid-phase epitaxy (LPE). By comparing the lifetimes of Hg-vacancy and extrinsic doped HgCdTe, we focus on three primary mechanisms limiting the lifetimes in these different p-type HgCdTe samples: radiative recombination, Auger recombination and Schokley-Read- Hall (SRH) Recombination. The recombination mechanism in p-type HgCdTe is the SRH recombination at low temperatures and Auger and radiative recombination at high temperature. It is found that the lifetime of As-doped and Au-doped HgCdTe is far longer than that of Hg-vacancy-doped sample which is caused by the deep energy level of the Hg-vacancy acceptor that is considered as a recombination center in HgCdTe. Also we found lifetime in those p-type doped HgCdTe LWIR epilayers is limited by SRH by comparing the experimental lifetimes with the calculated data. Impurity doping was found to have a main effect on minority carrier lifetime.

  18. Recent progress in MBE grown HgCdTe materials and devices at UWA

    Science.gov (United States)

    Gu, R.; Lei, W.; Antoszewski, J.; Madni, I.; Umana-Menbreno, G.; Faraone, L.

    2016-05-01

    HgCdTe has dominated the high performance end of the IR detector market for decades. At present, the fabrication costs of HgCdTe based advanced infrared devices is relatively high, due to the low yield associated with lattice matched CdZnTe substrates and a complicated cooling system. One approach to ease this problem is to use a cost effective alternative substrate, such as Si or GaAs. Recently, GaSb has emerged as a new alternative with better lattice matching. In addition, implementation of MBE-grown unipolar n-type/barrier/n-type detector structures in the HgCdTe material system has been recently proposed and studied intensively to enhance the detector operating temperature. The unipolar nBn photodetector structure can be used to substantially reduce dark current and noise without impeding photocurrent flow. In this paper, recent progress in MBE growth of HgCdTe infrared material at the University of Western Australia (UWA) is reported, including MBE growth of HgCdTe on GaSb alternative substrates and growth of HgCdTe nBn structures.

  19. Study of Morphological Defects on Dual-Band HgCdTe on CdZnTe

    Science.gov (United States)

    Reddy, M.; Radford, W. A.; Lofgreen, D. D.; Olsson, K. R.; Peterson, J. M.; Johnson, S. M.

    2014-08-01

    HgCdTe dual-band epitaxial layers on lattice-matched CdZnTe substrates often have morphological defects. These defects, unlike normal void and microvoid defects, do not contain a polycrystalline core and, therefore, do not offer a good contrast for observation using optical and electron microscopes. This paper reports a way of identifying these defects by using a Nomarski optical microscopy image overlay on focused ion beam microscopy images for preparation of thin cross-sectional foils of these defects. Transmission electron microscopy was used to study the defect cross-sections to identify the origin and evolution of the morphological defects and their effect on the epitaxial layer. This paper reports cross-sectional analysis of four morphological defects of different shape and size.

  20. Numerical simulation of the processes of small-diameter high-current electron beam shaping and injection

    CERN Document Server

    Gordeev, V S; Myskov, G A

    2001-01-01

    With the aid of BEAM 25 program there was carried out the numerical simulation of the non-stationary process of shaping a small-diameter (<= 20mm) high-current hollow electron beam in a diode with magnetic insulation,as well as of the process of beam injection into the accelerating LIA track. The diode configuration for the purpose of eliminating the leakage of electron flux to the anode surface was update. Presented are the results of calculation of the injected beam characteristics (amplitude-time parameters of a current pulse, space-angle distributions of electrons etc.) depending on diode geometric parameters.

  1. Achievement of Runaway Electron Energy Dissipation by High-Z Gas Injection in DIII-D

    Science.gov (United States)

    Hollmann, E. M.

    2014-10-01

    Disruption runaway electron (RE) formation followed by RE beam-wall strikes is a concern for future tokamaks, motivating the study of mitigation techniques to reduce the RE beam energy in a controlled manner. A promising approach for doing this is the injection of high-Z gas into the RE beam. Massive (100 torr-l) injection of high-Z gas into RE beams in DIII-D is shown to significantly dissipate both RE magnetic and kinetic energy. For example, injection of argon into a typical 300 kA current RE beam is observed to cause a drop in kinetic energy from 50 kJ to 10 kJ in 10 ms, thus rapidly reducing the damage-causing capability of the RE beam. Both the RE kinetic energy and pitch angle are important for determining the resulting wall damage, with high energy, high pitch angle electrons typically considered most dangerous. The RE energy distribution is found to be more skewed toward low energies than predicted by avalanche theory. The pitch angle is not found to be constant, as is frequently assumed, but is shown to drop from sin(θ) ~ 1 for energies less than 1 MeV to sin(θ) ~ 0 . 2 for energies greater than 10 MeV. Injection of high-Z impurities does not appear to change the overall shape of the energy or pitch angle distributions dramatically. The enhanced RE energy dissipation appears to be caused primarily via collisions with the cold plasma leading to line radiation. Synchrotron power loss only becomes significant in the absence of high-Z impurities, while radial transport loss of REs is seen to become dominant if the RE beam moves sufficiently close to the vessel walls. The experiments demonstrate that avalanche theory somewhat underestimates collisional dissipation of REs in the presence of high-Z atoms, even in the absence of radial transport losses, meaning that reducing RE wall damage in large tokamaks should be easier than previously expected. Supported by the US Department of Energy under DE-FG02-07ER54917 and DE-FC02-04ER54698.

  2. Influence of the injected charge polarity on the electrical behavior of CMX 100-AR cover glass submitted to electron irradiation

    OpenAIRE

    Belhaj, M.; Paulmier, T.; Guibert, N.; Payan, D.; Balcon, N.

    2014-01-01

    International audience; Under electron irradiation, insulating materials may charge either negatively or positively depending on their electron emission properties and characteristics of the incident electrons. The electrical behavior of these materials is linked to the sign of the injected charge. Some spacecraft materials may be subject is some situations to negative charging and in other situations to positive charging. The aim of this work is to investigate the effect of the sign of the i...

  3. Electric Fields Associated with Deep Injections of 10s to 100s keV Electrons in the Inner Magnetosphere

    Science.gov (United States)

    Califf, S.; Li, X.; Jaynes, A. N.; Zhao, H.; Malaspina, D.

    2015-12-01

    Recent observations by HOPE and MagEIS onboard the Van Allen Probes show frequent penetration of 10s to 100s keV electrons through the slot region and into the inner belt, resulting in an abundant electron population below L=3. The conventional picture is that the source populations of these 10s to 100s keV electrons originate in the plasma sheet and are injected (along with plasma sheet ions) into the inner magnetosphere either through enhancements in the large-scale convection electric field and/or through earthward propagating dipolarization fronts associated with substorms. In such cases the inward radial limit of the injections should coincide with the plasmapause. However, these electron injections often extend inside the plasmasphere, are observed far earthward of the typically accepted "flow-braking" region for dipolarization fronts, and occur at much lower L shells than injections of ions with similar energies. We investigate the electric fields associated with these deep electron injections using data from the Van Allen Probes and THEMIS in order to shed light on the underlying mechanisms that allow them to penetrate so far into the inner magnetosphere.

  4. Impact of three-dimensional geometry on the performance of isolated electron-injection infrared detectors

    Energy Technology Data Exchange (ETDEWEB)

    Fathipour, Vala; Jang, Sung Jun; Nia, Iman Hassani; Mohseni, Hooman, E-mail: hmohseni@northwestern.edu [Bio-Inspired Sensors and Optoelectronics Laboratory, Northwestern University, 2145 Sheridan Rd, Evanston, Illinois 60208 (United States)

    2015-01-12

    We present a quantitative study of the influence of three-dimensional geometry of the isolated electron–injection detectors on their characteristics. Significant improvements in the device performance are obtained as a result of scaling the injector diameter with respect to the trapping/absorbing layer diameters. Devices with about ten times smaller injector area with respect to the trapping/absorbing layer areas show more than an order of magnitude lower dark current, as well as an order of magnitude higher optical gain compared with devices of same size injector and trapping/absorbing layer areas. Devices with 10 μm injector diameter and 30 μm trapping/absorbing layer diameter show an optical gain of ∼2000 at bias voltage of −3 V with a cutoff wavelength of 1700 nm. Analytical expressions are derived for the electron-injection detector optical gain to qualitatively explain the significance of scaling the injector with respect to the absorber.

  5. Detecting Solenoid Valve Deterioration in In-Use Electronic Diesel Fuel Injection Control Systems

    Directory of Open Access Journals (Sweden)

    Chyuan-Yow Tseng

    2010-07-01

    Full Text Available The diesel engine is the main power source for most agricultural vehicles. The control of diesel engine emissions is an important global issue. Fuel injection control systems directly affect fuel efficiency and emissions of diesel engines. Deterioration faults, such as rack deformation, solenoid valve failure, and rack-travel sensor malfunction, are possibly in the fuel injection module of electronic diesel control (EDC systems. Among these faults, solenoid valve failure is most likely to occur for in-use diesel engines. According to the previous studies, this failure is a result of the wear of the plunger and sleeve, based on a long period of usage, lubricant degradation, or engine overheating. Due to the difficulty in identifying solenoid valve deterioration, this study focuses on developing a sensor identification algorithm that can clearly classify the usability of the solenoid valve, without disassembling the fuel pump of an EDC system for in-use agricultural vehicles. A diagnostic algorithm is proposed, including a feedback controller, a parameter identifier, a linear variable differential transformer (LVDT sensor, and a neural network classifier. Experimental results show that the proposed algorithm can accurately identify the usability of solenoid valves.

  6. Detecting solenoid valve deterioration in in-use electronic diesel fuel injection control systems.

    Science.gov (United States)

    Tsai, Hsun-Heng; Tseng, Chyuan-Yow

    2010-01-01

    The diesel engine is the main power source for most agricultural vehicles. The control of diesel engine emissions is an important global issue. Fuel injection control systems directly affect fuel efficiency and emissions of diesel engines. Deterioration faults, such as rack deformation, solenoid valve failure, and rack-travel sensor malfunction, are possibly in the fuel injection module of electronic diesel control (EDC) systems. Among these faults, solenoid valve failure is most likely to occur for in-use diesel engines. According to the previous studies, this failure is a result of the wear of the plunger and sleeve, based on a long period of usage, lubricant degradation, or engine overheating. Due to the difficulty in identifying solenoid valve deterioration, this study focuses on developing a sensor identification algorithm that can clearly classify the usability of the solenoid valve, without disassembling the fuel pump of an EDC system for in-use agricultural vehicles. A diagnostic algorithm is proposed, including a feedback controller, a parameter identifier, a linear variable differential transformer (LVDT) sensor, and a neural network classifier. Experimental results show that the proposed algorithm can accurately identify the usability of solenoid valves.

  7. Simulations of electromagnetic emissions produced in a thin plasma by a continuously injected electron beam

    CERN Document Server

    Annenkov, V V; Volchok, E P

    2015-01-01

    In this paper, electromagnetic emissions produced in a thin beam-plasma system are studied using two-dimensional particle-in-cell simulations. For the first time, the problem of emission generation in such a system is considered in the realistic formulation allowing for the continuous injection of a relativistic electron beam through the plasma boundary. Specific attention is given to the thin plasma case in which the transverse plasma size is comparable to the typical wavelength of beam-driven oscillations. Such a case is often implemented in laboratory beam-plasma experiments and has a number of peculiarities. Emission from a thin plasma does not require intermediate generation of electromagnetic plasma eigenmodes, as in the infinite case, and is more similar to the regular antenna radiation. In this work, we determine how efficiently the fundamental and second harmonic emissions can be generated in previously modulated and initially homogeneous plasmas.

  8. Simulations of electromagnetic emissions produced in a thin plasma by a continuously injected electron beam

    Science.gov (United States)

    Annenkov, V. V.; Timofeev, I. V.; Volchok, E. P.

    2016-05-01

    In this paper, electromagnetic emissions produced in a thin beam-plasma system are studied using two-dimensional particle-in-cell simulations. For the first time, the problem of emission generation in such a system is considered in a realistic formulation allowing for the continuous injection of a relativistic electron beam through a plasma boundary. Specific attention is given to the thin plasma case in which the transverse plasma size is comparable to the typical wavelength of beam-driven oscillations. Such a case is often implemented in laboratory beam-plasma experiments and has a number of peculiarities. Emission from a thin plasma does not require intermediate generation of the electromagnetic plasma eigenmodes, as in an infinite case, and is more similar to the regular antenna radiation. In this work, we determine how efficiently the fundamental and the second harmonic emissions can be generated in previously modulated and initially homogeneous plasmas.

  9. Plasma heating, electric fields and plasma flow by electron beam ionospheric injection

    Science.gov (United States)

    Winckler, J. R.; Erickson, K. N.

    1990-01-01

    The electric fields and the floating potentials of a Plasma Diagnostics Payload (PDP) located near a powerful electron beam injected from a large sounding rocket into the auroral zone ionosphere have been studied. As the PDP drifted away from the beam laterally, it surveyed a region of hot plasma extending nearly to 60 m radius. Large polarization electric fields transverse to B were imbedded in this hot plasma, which displayed large ELF wave variations and also an average pattern which has led to a model of the plasma flow about the negative line potential of the beam resembling a hydrodynamic vortex in a uniform flow field. Most of the present results are derived from the ECHO 6 sounding rocket mission.

  10. Electronic packaging materials prepared by powder injecting molding and pressure infiltration process

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    AlSiCp (65 vol.% SiC) electronic packaging materials were manufactured by powder injection molding (PIM) and pressure infiltration process in order to obtain near net-shaped parts. SiCp preformed compacts obtained by pre-sintering process at 1150 K have high strength and good appearance, and the ratio of open porosity to total porosiry is nearly 98%. The relative density of composites is bigger than 99%. The thermal conductivity of AlSiCp composites fabricated by this method is 198 W·m-1·K-1, and the coefficient of thermal expansion (CTE) is 8.0 × 10-6/K (298 K).

  11. The Pulsed Power Converter and Septum Magnet System for Injection into the Electron Storage Ring at ESRF

    CERN Document Server

    Perrine, J P; Völker, F V

    1996-01-01

    At ESRF, the European Synchrotron Radiation Facility in Grenoble, electrons are accelerated, via a 200 MeV Linac and a 6 GeV synchrotron booster, and injected into the storage ring at 10 Hz rate. Two thin septum blade magnets and an eddy current sheet type septum magnet provide the final deflection of the injected beam. The operational requirements of the e- injection scheme and the resulting demanding hardware specifications are recalled. The pulsed septum magnets are briefly described. The design, circuit layout and construction of the power converters are related with emphasis on innovative aspects of general interest. Results of tests during commissioning are reported.

  12. Self-Injection and Acceleration of Monoenergetic Electron Beams from Laser Wakefield Accelerators in a Highly Relativistic Regime

    Institute of Scientific and Technical Information of China (English)

    H. Yoshitama; WEN Xian-Lun; WEN Tian-Shu; WU Yu-Chi; ZHANG Bao-San; ZHU Qi-Hua; HUANG Xiao-Jun; AN Wei-Min; HUNG Wen-Hui; TANG Chuan-Xiang; LIN Yu-Zheng; T. Kameshima; WANG Xiao-Dong; CHEN Li-Ming; H. Kotaki; M. Kando; K. Nakajima; GU Yu-Qiu; GUO Yi; JIAO Chun-Ye; LIU Hong-Jie; PENG Han-Sheng; TANG Chuan-Ming; WANG Xiao-Dong

    2008-01-01

    @@ Self-injection and acceleration of monoenergetic electron beams from laser wakefield accelerators are first in-vestigated in the highly relativistic regime, using 100 TW class, 27 fs laser pulses. Quasi-monoenergetic multi-bunched beams with energies as high as multi-hundredMeV are observed with simultaneous measurements of side-scattering emissions that indicate the formation of self-channelling and self-injection of electrons into a plasma wake, referred to as a 'bubble'. The three-dimensional particle-in-cell simulations confirmed multiple self-injection of electron bunches into the bubble and their beam acceleration with gradient of 1.5 GeV/cm.

  13. Generation of Low Absolute Energy Spread Electron Beams in Laser Wakefield Acceleration Using Tightly Focused Laser through Near-Ionization-Threshold Injection

    CERN Document Server

    Li, F; Wan, Y; Wu, Y P; Hua, J F; Pai, C H; Lu, W; Mori, W B; Joshi, C

    2015-01-01

    An enhanced ionization injection scheme using a tightly focused laser pulse with intensity near the ionization potential to trigger the injection process in a mismatched pre-plasma channel has been proposed and examined via multi-dimensional particle-in-cell simulations. The core idea of the proposed scheme is to lower the energy spread of trapped beams by shortening the injection distance. We have established theory to precisely predict the injection distance, as well as the ionization degree of injection atoms/ions, electron yield and ionized charge. We have found relation between injection distance and laser and plasma parameters, giving a strategy to control injection distance hence optimizing beam's energy spread. In the presented simulation example, we have investigated the whole injection and acceleration in detail and found some unique features of the injection scheme, like multi-bunch injection, unique longitudinal phase-space distribution, etc. Ultimate electron beam has a relative energy spread (rm...

  14. A New nBn IR Detection Concept Using HgCdTe Material

    Science.gov (United States)

    Gravrand, O.; Boulard, F.; Ferron, A.; Ballet, Ph.; Hassis, W.

    2015-09-01

    This paper presents a new HgCdTe-based heterostructure to perform quantum infrared detection. The structure is based on the unipolar barrier concept, introduced by White in the 1980s for HgCdTe. The driving concept is the use of a large gap barrier layer to impede the flow of majority carriers (electrons on the conduction band in the case of n-type material) while facilitating the transport of minority (photo) carriers (holes on the valence band). The issue encountered here is the formation of a small potential barrier on the valence band, blocking photocarriers and therefore killing the quantum efficiency. The idea is to optimize the structure with an asymmetric barrier: abrupt on the contact side to efficiently block the majority carriers, and gradual on the absorption layer side to plane down the remaining potential barrier for the collected photocarriers. The concept has been studied by finite element modeling simulation and showed promising results. An optimal design has been identified in the middle wave band and molecular beam epitaxy layers have been grown then processed. First experimental characterization of the electro-optical properties of such structures showed promising features: 60% quantum efficiency and low turn-on voltage have been measured on single pixels.

  15. Superluminescence from an optically pumped molecular tunneling junction by injection of plasmon induced hot electrons

    Directory of Open Access Journals (Sweden)

    Kai Braun

    2015-05-01

    Full Text Available Here, we demonstrate a bias-driven superluminescent point light-source based on an optically pumped molecular junction (gold substrate/self-assembled molecular monolayer/gold tip of a scanning tunneling microscope, operating at ambient conditions and providing almost three orders of magnitude higher electron-to-photon conversion efficiency than electroluminescence induced by inelastic tunneling without optical pumping. A positive, steadily increasing bias voltage induces a step-like rise of the Stokes shifted optical signal emitted from the junction. This emission is strongly attenuated by reversing the applied bias voltage. At high bias voltage, the emission intensity depends non-linearly on the optical pump power. The enhanced emission can be modelled by rate equations taking into account hole injection from the tip (anode into the highest occupied orbital of the closest substrate-bound molecule (lower level and radiative recombination with an electron from above the Fermi level (upper level, hence feeding photons back by stimulated emission resonant with the gap mode. The system reflects many essential features of a superluminescent light emitting diode.

  16. Superluminescence from an optically pumped molecular tunneling junction by injection of plasmon induced hot electrons.

    Science.gov (United States)

    Braun, Kai; Wang, Xiao; Kern, Andreas M; Adler, Hilmar; Peisert, Heiko; Chassé, Thomas; Zhang, Dai; Meixner, Alfred J

    2015-01-01

    Here, we demonstrate a bias-driven superluminescent point light-source based on an optically pumped molecular junction (gold substrate/self-assembled molecular monolayer/gold tip) of a scanning tunneling microscope, operating at ambient conditions and providing almost three orders of magnitude higher electron-to-photon conversion efficiency than electroluminescence induced by inelastic tunneling without optical pumping. A positive, steadily increasing bias voltage induces a step-like rise of the Stokes shifted optical signal emitted from the junction. This emission is strongly attenuated by reversing the applied bias voltage. At high bias voltage, the emission intensity depends non-linearly on the optical pump power. The enhanced emission can be modelled by rate equations taking into account hole injection from the tip (anode) into the highest occupied orbital of the closest substrate-bound molecule (lower level) and radiative recombination with an electron from above the Fermi level (upper level), hence feeding photons back by stimulated emission resonant with the gap mode. The system reflects many essential features of a superluminescent light emitting diode.

  17. Cross-Sectional Study of Macrodefects in MBE Dual-Band HgCdTe on CdZnTe

    Science.gov (United States)

    Reddy, M.; Lofgreen, D. D.; Jones, K. A.; Peterson, J. M.; Radford, W. A.; Benson, J. D.; Johnson, S. M.

    2013-11-01

    HgCdTe dual-band mid-wave infrared/long-wave infrared focal-plane arrays on CdZnTe are a key component in advanced electrooptic sensor applications. Molecular beam epitaxy (MBE) has been used successfully for growth of dual-band layers on larger CdZnTe substrates. However, the macrodefect density, which is known to reduce the pixel operability and its run-to-run variation, is larger when compared with layers grown on Si substrate. This paper reports the macrodefect density versus size signature of a well-optimized MBE dual-band growth and a cross-sectional study of a macrodefect that represents the most prevalent class using focused ion beam, scanning transmission electron microscopy, and energy-dispersive x-ray spectroscopy. The results show that the macrodefect originates from a void, which in turn is associated with a pit on the CdZnTe substrate.

  18. Organic light emitting diodes using magnesium doped organic acceptor as electron injection layer and silver as cathode

    Institute of Scientific and Technical Information of China (English)

    Cao Guo-Hua; Qin Da-Shan; Guan Min; Cao Jun-Song; Zeng Yi-Ping; Li Jin-Min

    2008-01-01

    Organic light emitting diodes employing magnesium doped electron aceeptor 3,4,9,10 perylenetetracarboxylic dianhydride (Mg:PTCDA) as electron injection layer and silver as cathode were demonstrated. As compared to Mg:Ag cathode,the combination of the Mg:PTCDA layer and silver provided enhanced electron injection into tris (8-quinolinolato) aluminium.The device with 1:2 Mg:PTCDA and Ag showed an increase of about 12% in the maximum current efficiency,mainly due to the improved hole-electron balance,and an increase of about 28% in the maximum power efficiency,as compared to the control device using Mg:Ag cathode.The properties of Mg:PTCDA composites were studied as well.

  19. High quality electron beam acceleration by ionization injection in laser wakefields with mid-infrared dual-color lasers

    CERN Document Server

    Zeng, Ming; Chen, Min; Mori, Warren B; Sheng, Zheng-Ming; Hidding, Bernhard

    2016-01-01

    For the laser wakefield acceleration, suppression of beam energy spread while keeping sufficient charge is one of the key challenges. In order to achieve this, we propose bichromatic laser ionization injection with combined laser wavelengths of $2.4\\rm \\mu m$ and $0.8\\rm \\mu m$ for wakefield excitation and for triggering electron injection via field ionization, respectively. A laser pulse at $2.4\\rm \\mu m$ wavelength enables one to drive an intense acceleration structure with relatively low laser power. To further reduce the requirement of laser power, we also propose to use carbon dioxide as the working gas medium, where carbon acts as the injection element. Our full three dimensional particle-in-cell simulations show that electron beams at the GeV energy level with both low energy spreads (around one percent) and high charges (several tens of picocoulomb) can be obtained by this scheme with laser parameters achievable in the near future.

  20. Mercury cadmium telluride (HgCdTe) passivation by advanced thin conformal Al2O3 films

    Science.gov (United States)

    Fu, Richard; Pattison, James; Chen, Andrew; Nayfeh, Osama

    2012-06-01

    HgCdTe passivation process must be performed at low temperature in order to reduce Hg depletion. Low temperature plasma enhanced atomic layer deposition (PE-ALD) is an emerging deposition technology for thin highly conformal films to meet the demand. Room temperature PE-ALD Al2O3 film's passivation on HgCdTe has been studied. Conformal film was investigated through SEM images of the Al2O3 film deposited onto high aspect ratio features dry etched into HgCdTe. Minority carrier lifetime was measured and compared by photoconductive decay transients of HgCdTe before and after deposition. Room temperature ALD Al2O3 film increased the minority carrier lifetime of HgCdTe.

  1. Can graphene make better HgCdTe infrared detectors?

    Directory of Open Access Journals (Sweden)

    Shi Yanli

    2011-01-01

    Full Text Available Abstract We develop a simple and low-cost technique based on chemical vapor deposition from which large-size graphene films with 5-10 graphene layers can be produced reliably and the graphene films can be transferred easily onto HgCdTe (MCT thin wafers at room temperature. The proposed technique does not cause any thermal and mechanical damages to the MCT wafers. It is found that the averaged light transmittance of the graphene film on MCT thin wafer is about 80% in the mid-infrared bandwidth at room temperature and 77 K. Moreover, we find that the electrical conductance of the graphene film on the MCT substrate is about 25 times larger than that of the MCT substrate at room temperature and 77 K. These experimental findings suggest that, from a physics point of view, graphene can be utilized as transparent electrodes as a replacement for metal electrodes while producing better and cheaper MCT infrared detectors.

  2. Ion Beam Nanostructuring of HgCdTe Ternary Compound

    Science.gov (United States)

    Smirnov, Aleksey B.; Savkina, Rada K.; Udovytska, Ruslana S.; Gudymenko, Oleksandr I.; Kladko, Vasyl P.; Korchovyi, Andrii A.

    2017-05-01

    Systematic study of mercury cadmium telluride thin films subjected to the ion beam bombardment was carried out. The evolution of surface morphology of (111) Hg1 - x Cd x Te ( x 0.223) epilayers due to 100 keV B+ and Ag+ ion irradiation was studied by AFM and SEM methods. X-ray photoelectron spectroscopy and X-ray diffraction methods were used for the investigation of the chemical compound and structural properties of the surface and subsurface region. It was found that in the range of nanoscale, arrays of holes and mounds on Hg0.777Cd0.223Te (111) surface as well as the polycrystalline Hg1 - x Cd x Te cubic phase with alternative compound ( x 0.20) have been fabricated using 100 keV ion beam irradiation of the basic material. Charge transport investigation with non-stationary impedance spectroscopy method has shown that boron-implanted structures are characterized by capacity-type impedance whereas for silver-implanted structures, an inductive-type impedance (or "negative capacitance") is observed. A hybrid system, which integrates the nanostructured ternary compound (HgCdTe) with metal-oxide (Ag2O) inclusions, was fabricated by Ag+ ion bombardment. The sensitivity of such metal-oxide-semiconductor hybrid structure for sub-THz radiation was detected with NEP 4.5 × 10-8 W/Hz1/2at ν ≈ 140 GHz and 296 K without amplification.

  3. Simulation of Small-Pitch HgCdTe Photodetectors

    Science.gov (United States)

    Vallone, Marco; Goano, Michele; Bertazzi, Francesco; Ghione, Giovanni; Schirmacher, Wilhelm; Hanna, Stefan; Figgemeier, Heinrich

    2017-09-01

    Recent studies indicate as an important technological step the development of infrared HgCdTe-based focal plane arrays (FPAs) with sub-wavelength pixel pitch, with the advantage of smaller volume, lower weight, and potentially lower cost. In order to assess the limits of pixel pitch scaling, we present combined three-dimensional optical and electrical simulations of long-wavelength infrared HgCdTe FPAs, with 3 μm, 5 μm, and 10 μm pitch. Numerical simulations predict significant cavity effects, brought by the array periodicity. The optical and electrical contributions to spectral inter-pixel crosstalk are investigated as functions of pixel pitch, by illuminating the FPAs with Gaussian beams focused on the central pixel. Despite the FPAs being planar with 100% pixel duty cycle, our calculations suggest that the total crosstalk with nearest-neighbor pixels could be kept acceptably small also with pixels only 3 μ m wide and a diffraction-limited optical system.

  4. Dislocation reduction in HgCdTe grown on CdTe/Si

    Science.gov (United States)

    Wijewarnasuriya, Priyalal S.

    2016-05-01

    Bulk-grown CdZnTe (Zn = 3%) substrates are the natural choice for HgCdTe epitaxy since it is lattice matched to long wave LW-HgCdTe alloy. However, lack of large area CdZnTe substrates, high production costs, and more importantly, the difference in thermal expansion coefficients between CdZnTe and silicon Read out Integrated Circuits (ROIC) are some of the inherent drawbacks of CdZnTe substrates. Consequently, Hg1-xCdxTe detectors fabricated on silicon substrates are an attractive alternative. Recent developments in the molecular beam epitaxy (MBE) buffer layer growth technology on Si substrates has revolutionized the HgCdTe research and offered a new dimension to HgCdTe-based IR technology. Si substrates provide advantages in terms of relatively large area (3 to 6-inch diameter is easily obtained) compared to CZT substrate materials, durability during processing, and reliability to thermal cycling. Innovations in Si-based composite substrates made it possible to fabricate very large-format IR arrays that offer higher resolution, low-cost arrays and more dies per wafer. Between Si substrates and HgCdTe has large lattice mismatch of 19%. This leads to dislocation densities of low-107 cm-2 for optimal growth of HgCdTe on silicon-based substrates as compared to the mid-104 cm-2 dislocation density of HgCdTe grown on CdZnTe. This paper present dislocation reduction by two orders of magnitude using thermal cycle anneal under Hg environment on HgCdTe grown on Si substrates and as well as defect reduction in Cd(Se)Te buffer layers grown on Si Substrates.

  5. A bremsstrahlung gamma-ray source based on stable ionization injection of electrons into a laser wakefield accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Döpp, A., E-mail: andreas.doepp@polytechnique.edu [LOA, ENSTA ParisTech, CNRS, École polytechnique, Université Paris-Saclay, 828 bd des Maréchaux, 91762 Palaiseau Cedex (France); Centro de Laseres Pulsados, Parque Cientfico, 37185 Villamayor, Salamanca (Spain); Guillaume, E.; Thaury, C.; Lifschitz, A. [LOA, ENSTA ParisTech, CNRS, École polytechnique, Université Paris-Saclay, 828 bd des Maréchaux, 91762 Palaiseau Cedex (France); Sylla, F. [SourceLAB SAS, 86 rue de Paris, 91400 Orsay (France); Goddet, J-P.; Tafzi, A.; Iaquanello, G.; Lefrou, T.; Rousseau, P. [LOA, ENSTA ParisTech, CNRS, École polytechnique, Université Paris-Saclay, 828 bd des Maréchaux, 91762 Palaiseau Cedex (France); Conejero, E.; Ruiz, C. [Departamento de Física Aplicada, Universidad de Salamanca, Plaza de laMerced s/n, 37008 Salamanca (Spain); Ta Phuoc, K.; Malka, V. [LOA, ENSTA ParisTech, CNRS, École polytechnique, Université Paris-Saclay, 828 bd des Maréchaux, 91762 Palaiseau Cedex (France)

    2016-09-11

    Laser wakefield acceleration permits the generation of ultra-short, high-brightness relativistic electron beams on a millimeter scale. While those features are of interest for many applications, the source remains constraint by the poor stability of the electron injection process. Here we present results on injection and acceleration of electrons in pure nitrogen and argon. We observe stable, continuous ionization-induced injection of electrons into the wakefield for laser powers exceeding a threshold of 7 TW. The beam charge scales approximately with the laser energy and is limited by beam loading. For 40 TW laser pulses we measure a maximum charge of almost 1 nC per shot, originating mostly from electrons of less than 10 MeV energy. The relatively low energy, the high charge and its stability make this source well-suited for applications such as non-destructive testing. Hence, we demonstrate the production of energetic radiation via bremsstrahlung conversion at 1 Hz repetition rate. In accordance with GEANT4 Monte-Carlo simulations, we measure a γ-ray source size of less than 100 μm for a 0.5 mm tantalum converter placed at 2 mm from the accelerator exit. Furthermore we present radiographs of image quality indicators.

  6. A bremsstrahlung gamma-ray source based on stable ionization injection of electrons into a laser wakefield accelerator

    Science.gov (United States)

    Döpp, A.; Guillaume, E.; Thaury, C.; Lifschitz, A.; Sylla, F.; Goddet, J.-P.; Tafzi, A.; Iaquanello, G.; Lefrou, T.; Rousseau, P.; Conejero, E.; Ruiz, C.; Ta Phuoc, K.; Malka, V.

    2016-09-01

    Laser wakefield acceleration permits the generation of ultra-short, high-brightness relativistic electron beams on a millimeter scale. While those features are of interest for many applications, the source remains constraint by the poor stability of the electron injection process. Here we present results on injection and acceleration of electrons in pure nitrogen and argon. We observe stable, continuous ionization-induced injection of electrons into the wakefield for laser powers exceeding a threshold of 7 TW. The beam charge scales approximately with the laser energy and is limited by beam loading. For 40 TW laser pulses we measure a maximum charge of almost 1 nC per shot, originating mostly from electrons of less than 10 MeV energy. The relatively low energy, the high charge and its stability make this source well-suited for applications such as non-destructive testing. Hence, we demonstrate the production of energetic radiation via bremsstrahlung conversion at 1 Hz repetition rate. In accordance with GEANT4 Monte-Carlo simulations, we measure a γ-ray source size of less than 100 μm for a 0.5 mm tantalum converter placed at 2 mm from the accelerator exit. Furthermore we present radiographs of image quality indicators.

  7. A bremsstrahlung gamma-ray source based on stable ionization injection of electrons into a laser wakefield accelerator

    CERN Document Server

    Döpp, A; Thaury, C; Lifschitz, A; Sylla, F; Goddet, J-P; Tafzi, A; Iaquanello, G; Lefrou, T; Rousseau, P; Conejero, E; Ruiz, C; Phuoc, K Ta; Malka, V

    2016-01-01

    Laser wakefield acceleration permits the generation of ultra-short, high-brightness relativistic electron beams on a millimeter scale. While those features are of interest for many applications, the source remains constraint by the poor stability of the electron injection process. Here we present results on injection and acceleration of electrons in pure nitrogen and argon. We observe stable, continuous ionization-induced injection of electrons into the wakefield for laser powers exceeding a threshold of 7 TW. The beam charge scales approximately linear with the laser energy and is limited by beam loading. For 40 TW laser pulses we measure a maximum charge of almost 1 nC per shot, originating mostly from electrons of less than 10 MeV energy. The relatively low energy, the high charge and its stability make this source well-suited for applications such as non-destructive testing. Hence, we demonstrate the production of energetic radiation via bremsstrahlung conversion at 1 Hz repetition rate. In accordance wit...

  8. External injection and acceleration of electron bunch in front of the plasma wakefield produced by a periodic chirped laser pulse

    Science.gov (United States)

    Eslami, Esmaeil; Afhami, Saeedeh

    2017-01-01

    Herein, we present the analytical results on the behavior of the electron bunch injected in front of the plasma wakefield produced by a chirped laser pulse. In particular, a periodic chirped pulse may produce an ultra-relativistic electron bunch with a relatively small energy spread. The electrons are trapped near the region of the first accelerating maximum of the wakefield and are compressed in both the longitudinal and transverse directions (betatron oscillation). Our results are in good agreement with the one-dimensional results recently published.

  9. In situ bioremediation of nitrate and perchlorate in vadose zone soil for groundwater protection using gaseous electron donor injection technology.

    Science.gov (United States)

    Evans, Patrick J; Trute, Mary M

    2006-12-01

    When present in the vadose zone, potentially toxic nitrate and perchlorate anions can be persistent sources of groundwater contamination. Gaseous electron donor injection technology (GEDIT), an anaerobic variation of petroleum hydrocarbon bioventing, involves injecting electron donor gases, such as hydrogen or ethyl acetate, into the vadose zone, to stimulate biodegradation of nitrate and perchlorate. Laboratory microcosm studies demonstrated that hydrogen and ethanol promoted nitrate and perchlorate reduction in vadose zone soil and that moisture content was an important factor. Column studies demonstrated that transport of particular electron donors varied significantly; ethyl acetate and butyraldehyde were transported more rapidly than butyl acetate and ethanol. Nitrate removal in the column studies, up to 100%, was best promoted by ethyl acetate. Up to 39% perchlorate removal was achieved with ethanol and was limited by insufficient incubation time. The results demonstrate that GEDIT is a promising remediation technology warranting further validation.

  10. Simulation of ionization-front-forming process at injection of relativistic electron beam with a gas chamber

    Energy Technology Data Exchange (ETDEWEB)

    Dolya, S.N.; Zhidkov, E.P.; Rubin, S.B.; Semerdzhiev, Kh.I.

    1982-01-01

    The methodical work on creation of computer program for numerical study of the processes of forming and motion of a virtual cathode at the injection of relativistic electron beam into a short cylindrical chamber, filled with gas, has been carried out. The obtained plots of the distributions of fields, potential and density appearing out of ion and electron gas of the beam itself are presented. The dependence of cross-section ionization on the electron velocity has been taken into account at the calculation; the resonance contribution into summarized cross-section of ionization was simulated. It is shown that the injection into the chamber without gas, some oscillations of the virtual cathode are observed. At the presence of the final front of the beam, the fields level at the initial stage is smaller than for the beam with a sharp front. However, in some time the field amplitudes are compared. The motion of simulated probe ions in the chamber is analyzed.

  11. Affect of the electrical characteristics depending on the hole and electron injection materials of red organic light-emitting diodes

    Indian Academy of Sciences (India)

    Jong-Yeol Shin; Hyun-Min Choi; Hyeon-Seok Han; Jin-Woong Hong

    2011-10-01

    This study examined the electrical and optical properties of red OLEDs (organic lightemitting diodes) with a four-layer structure, ITO/amorphous fluoropolymer (AF)/,′--diphenyl,′-bis(3-methylphenyl)-1, 1-biphenyl-4,4′-diamine (TPD)/R-H:R-D/lithium fluoride (LiF)/Al, containing a hole injection material, AF (amorphous fluoropolymer) and an electron injection material, LiF. Compared to the basic structure (two-layer structure), the brightness and luminous efficiency of the four-layer structure, ITO/TPD/R-H:R-D/Al, increased approximately 100 times (30,000 lm/m2) and 150 times (51 lm/W), respectively, with an applied voltage. The excellent efficiency of the external proton was also increased 150 times (0.51%). That is, the hole and electron injection layers improved the surface roughness of ITO and Al, and the interfacial physical properties. In addition, these layers allowed the smooth injection of holes and electrons. The luminance, luminous efficiency and external quantum efficiency were attributed to an increase in the recombination rates.

  12. Petawatt laser-driven wakefield accelerator: All-optical electron injection via collision of laser pulses and radiation cooling of accelerated electron bunches.

    Science.gov (United States)

    Kalmykov, Serguei; Avitzour, Yoav; Yi, S. Austin; Shvets, Gennady

    2007-11-01

    We explore an electron injection into the laser wakefield accelerator (LWFA) using nearly head-on collision of the petawatt ultrashort (˜30 fs) laser pulse (driver) with a low- amplitude laser (seed) beam of the same duration and polarization. To eliminate the threat to the main laser amplifier we consider two options: (i) a frequency-shifted seed and (ii) a seed pulse propagating at a small angle to the axis. We show that the emission of synchrotron radiation due to betatron oscillations of trapped and accelerated electrons results in significant transverse cooling of quasi- monoenergetic accelerated electrons (with energies above 1 GeV). At the same time, the energy losses due to the synchrotron emission preserve the final energy spread of the electron beam. The ``dark current'' due to the electron trapping in multiple wake buckets and the effect of beam loading (wake destruction at the instant of beams collision) are discussed.

  13. Recent progress for HGCDTE quantum detection in France

    Science.gov (United States)

    Gravrand, O.; Destefanis, G.

    2013-07-01

    Due to its tuneable narrow band gap, HgCdTe (MCT) is a material of choice for high complexity IR focal plane arrays (FPAs). Being a strategic defence technology, MCT detector developments is totally mastered at every stage of fabrication at LETI and Sofradir, from the lattice matched CZT substrate growth, the active layer MCT growth, to PV technology, silicon ROIC design and flip chip hybridization. Within the last few years, MCT devices have considerably evolved in terms of device complexity, performances, and field of action. n/p standard technology has been developed in all spectral ranges, from VLWIR (20 μm) down SWIR (1.7 μm). MCT photodiode sensibility goes even lower, down to visible and even UV with a constant quantum efficiency. Moreover, MCT material provides us with high and noiseless avalanche gains inside the photodiode itself, which we are now fully able to use for the optimization of FPA performances. Besides, p/n diode structure is a new emerging process which improves detector performances by several orders of magnitude in terms of dark current, by comparison with the n/p historical structure. This technology has been successfully demonstrated from VLWIR (15 μm cut off) down to the SWIR range (2 μm cut off) where ultra low dark currents are recorded at low temperatures (0.4 e/s). In the same time, first dual band FPAs are delivered, which are expected to be the 3rd generation of IR detectors. At last, considerable efforts are made in order to increase the operational temperature, going from 100 K to 150 K for MWIR FPAs at constant performances, optimizing all technological steps, especially growth issues. Going at even higher operating temperatures (HOTs) is also under active study.

  14. Electron self-injection during interaction of tightly focused few-cycle laser pulses with underdense plasma

    Science.gov (United States)

    Zhidkov, Alexei; Fujii, Takashi; Nemoto, Koshichi

    2008-09-01

    We study the interaction of short laser pulses tightly focused in a tiny volume proportional to the cube of the pulse wavelength (λ3) with underdense plasma by means of real-geometry particle-in-cell simulations. Underdense plasma irradiated by relatively low-energy λ3 (and λ2 ) laser pulses is shown to be an efficient source of multi-MeV electrons, ˜50nC/J , and coherent hard x rays, despite a strong pulse diffraction. Transverse wave breaking in the vicinity of the laser focus is found to give rise to an immense electron charge loading to the acceleration phase of a laser wake field. A strong blowout regime provoked by the injected electrons resulting in the distribution of accelerated electrons is found for λ3 pulses (further electron acceleration driving by λ2 pulses runs in the usual way). With an increase of pulse energy, wiggling and electron-hose instabilities in the λ3 pulse wake are recognized in the blowout regime. For higher-energy λ3 pulses, the injected beams are well modulated and may serve as a good source of coherent x rays.

  15. Experiments on current-driven three-dimensional ion sound turbulence. I - Return-current limited electron beam injection. II - Wave dynamics

    Science.gov (United States)

    Stenzel, R. L.

    1978-01-01

    Pulsed electron beam injection into a weakly collisional magnetized background plasma is investigated experimentally; properties of the electron beam and background plasma, as well as the low-frequency instabilities and wave dynamics, are discussed. The current of the injected beam closes via a field-aligned return current of background electrons. Through study of the frequency and wavenumber distribution, together with the electron distribution function, the low-frequency instabilities associated with the pulsed injection are identified as ion acoustic waves driven unstable by the return current. The frequency cut-off of the instabilities predicted from renormalized plasma turbulence theory, has been verified experimentally.

  16. Minority carrier lifetime in iodine-doped molecular beam epitaxy-grown HgCdTe

    Energy Technology Data Exchange (ETDEWEB)

    Madni, I.; Umana-Membreno, G. A.; Lei, W.; Gu, R.; Antoszewski, J.; Faraone, L. [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Crawley, Western Australia 6009 (Australia)

    2015-11-02

    The minority carrier lifetime in molecular beam epitaxy grown layers of iodine-doped Hg{sub 1−x}Cd{sub x}Te (x ∼ 0.3) on CdZnTe substrates has been studied. The samples demonstrated extrinsic donor behavior for carrier concentrations in the range from 2 × 10{sup 16} cm{sup −3} to 6 × 10{sup 17} cm{sup −3} without any post-growth annealing. At a temperature of 77 K, the electron mobility was found to vary from 10{sup 4} cm{sup 2}/V s to 7 × 10{sup 3} cm{sup 2}/V s and minority carrier lifetime from 1.6 μs to 790 ns, respectively, as the carrier concentration was increased from 2 × 10{sup 16} cm{sup −3} to 6 × 10{sup 17} cm{sup −3}. The diffusion of iodine is much lower than that of indium and hence a better alternative in heterostructures such as nBn devices. The influence of carrier concentration and temperature on the minority carrier lifetime was studied in order to characterize the carrier recombination mechanisms. Measured lifetimes were also analyzed and compared with the theoretical models of the various recombination processes occurring in these materials, indicating that Auger-1 recombination was predominant at higher doping levels. An increase in deep-level generation-recombination centers was observed with increasing doping level, which suggests that the increase in deep-level trap density is associated with the incorporation of higher concentrations of iodine into the HgCdTe.

  17. Improved Hole-Blocking and Electron Injection Using a TPBI Interlayer at the Cathode Interface of OLEDs

    Institute of Scientific and Technical Information of China (English)

    LIAN Jia-Bong; NIU Fang-Fang; LIU Ya-Wei; ZENG Peng-Ju

    2011-01-01

    The effect of a benzimidazole derivative (TPBI) electron injection layer (EIL) on the performance of Alq3 based organic light-emitting devices (OLEDs) with a Cs2CO3/Al cathode is investigated. An increasing current density from 71.9mA/cm2 to 188.3mA/cm2, and an enhanced electroluminescence (EL) efficiency from 3.2cd/A to 3.64cd/A at 9 V are found when a thin TPBI layer (5nm) is inserted at the Alq3/Cs2CO3 interface. After further increasing the TPBI thickness to 10nm, OLEDs display a further increase in EL efficiency to 4.53 cd/A.Our experiment suggests that the TPBI thin layer at the Alq3/Cs2CO3 interface facilitates the electron injection and is also involved with hole-blocking and exciton confinement.%@@ The effect of a benzimidazole derivative(TPBI)electron injection layer(EIL)on the performance of Alga based organic light-emitting devices(OLEDs)with a Cs2C03/Al cathode is investigated.An increasing current density from 71.9mA/cm2 to 188.3mA/cm2, and an enhanced electroluminescence(EL)efficiency from 3.2cd/A to 3.64 cd/A at 9 V are found when a thin TPBI layer(5 nm)is inserted at the Alga/Cs2 C03 interface.After further increasing the TPBI thickness to 10 run, OLEDs display a further increase in EL efficiency to 4.53cd/A.Our experiment suggests that the TPBI thin layer at the Alga/Ca2C03 interface facilitates the electron injection and is also involved with hole-blocking and exciton confinement.

  18. Monolithic dual-band HgCdTe infrared detector structure

    CSIR Research Space (South Africa)

    Parish, G

    1997-07-01

    Full Text Available A monolithic HgCdTe photoconductive device structure is presented that is suitable for dual-band optically registered infrared photodetection in the two atmospheric transmission windows of 3-5 mu m and 8-12 mu m, which correspond to the mid...

  19. Real Time Monitor and Control of MBE Growth of HgCdTe by Spectroscopic Ellipsometry.

    Science.gov (United States)

    2007-11-02

    The primary goal of this contract develop a real-time monitoring capability for HgCdTe composition during MBE growth . This goal was realized by...methodology for acquiring and analyzing insitu SE data in the MBE growth environment. These improvements and developments are part of an extensive

  20. Thermal Cycle Annealing and its Application to Arsenic-Ion Implanted HgCdTe

    Science.gov (United States)

    2014-06-26

    doping profile, as shown in Figure 3. The TCA treatment on the unimplanted epilayers showed an exponential defect reduction proportional to the...Chamonal, P. Castelein, J. Zanatta, M. Tchagaspanian, A. Papon, J. Barnes, F. Henry, S. Gout , G. Bourgeois, C. Pautet and P. Fougeres, "HgCdTe FPAs

  1. Arsenic complexes optical signatures in As-doped HgCdTe

    Energy Technology Data Exchange (ETDEWEB)

    Gemain, F.; Robin, I. C.; Brochen, S.; Ballet, P.; Gravrand, O.; Feuillet, G. [CEA-LETI Minatec Campus, 17 rue des Martyrs, 38000 Grenoble (France)

    2013-04-08

    In this paper, the optical signatures of arsenic complexes in As-doped HgCdTe samples grown by molecular beam epitaxy are clearly identified using comparison between photoluminescence spectra, Extended X-Ray Absorption Fine Structure, and Hall measurements. The ionization energies of the different complexes are measured both by photoluminescence and Hall measurements.

  2. Phase space linearization and external injection of electron bunches into laser-driven plasma wakefields at REGAE

    Energy Technology Data Exchange (ETDEWEB)

    Zeitler, Benno Michael Georg [Hamburg Univ. (Germany). Fakultaet fuer Mathematik, Informatik und Naturwissenschaften

    2017-01-15

    Laser Wake field Acceleration (LWFA) has the potential to become the next-generation acceleration technique for electrons. In particular, the large field gradients provided by these plasma-based accelerators are an appealing property, promising a significant reduction of size for future machines and user facilities. Despite the unique advantages of these sources, however, as of today, the produced electron bunches cannot yet compete in all beam quality criteria compared to conventional acceleration methods. Especially the stability in terms of beam pointing and energy gain, as well as a comparatively large energy spread of LWFA electron bunches require further advancement for their applicability. The accelerated particles are typically trapped from within the plasma which is used to create the large field gradients in the wake of a high-power laser. From this results a lack of control and access to observing the actual electron injection - and, consequently, a lack of experimental verification. To tackle this problem, the injection of external electrons into a plasma wakefield seems promising. In this case, the initial beam parameters are known, so that a back-calculation and reconstruction of the wakefield structure are feasible. Such an experiment is planned at the Relativistic Electron Gun for Atomic Exploration (REGAE). REGAE, which is located at DESY in Hamburg, is a small linear accelerator offering unique beam parameters compatible with the requirements of the planned experiment. The observations and results gained from such an external injection are expected to improve the beam quality and stability of internal injection variants, due to the broadened understanding of the underlying plasma dynamics. Furthermore, an external injection will always be required for so-called staging of multiple LWFA-driven cavities. Also, the demonstration of a suchlike merging of conventional and plasma accelerators gives rise to novel hybrid accelerators, where the matured

  3. A sequential injection electronic tongue employing the transient response from potentiometric sensors for anion multidetermination.

    Science.gov (United States)

    Cortina, M; Duran, A; Alegret, S; del Valle, M

    2006-08-01

    Intelligent and automatic systems based on arrays of non-specific-response chemical sensors were recently developed in our laboratory. For multidetermination applications, the normal choice is an array of potentiometric sensors to generate the signal, and an artificial neural network (ANN) correctly trained to obtain the calibration model. As a great amount of information is required for the proper modelling, we proposed its automated generation by using the sequential injection analysis (SIA) technique. First signals used were steady-state: the equilibrium signal after a step-change in concentration. We have now adapted our procedures to record the transient response corresponding to a sample step. The novelty in this approach is therefore the use of the dynamic components of the signal in order to better discriminate or differentiate a sample. In the developed electronic tongue systems, detection is carried out by using a sensor array formed by five potentiometric sensors based on PVC membranes. For the developed application we employed two different chloride-selective sensors, two nitrate-selective sensors and one generic response sensor. As the amount of raw data (fivefold recordings corresponding to the five sensors) is excessive for an ANN, some feature extraction step prior to the modelling was needed. In order to attain substantial data reduction and noise filtering, the data obtained were fitted with orthonormal Legendre polynomials. In this case, a third-degree Legendre polynomial was shown to be sufficient to fit the data. The coefficients of these polynomials were the input information fed into the ANN used to model the concentrations of the determined species (Cl-, NO3- and HCO3-). Best results were obtained by using a backpropagation neural network trained with the Bayesian regularisation algorithm; the net had a single hidden layer containing three neurons with the tansig transfer function. The results obtained from the time-dependent response were

  4. Determination of charge-carrier diffusion length in the photosensing layer of HgCdTe n-on-p photovoltaic infrared focal plane array detectors

    Energy Technology Data Exchange (ETDEWEB)

    Vishnyakov, A. V.; Stuchinsky, V. A., E-mail: stuchin@isp.nsc.ru; Brunev, D. V.; Zverev, A. V.; Dvoretsky, S. A. [Institute of Semiconductor Physics, Russian Academy of Science, Siberian Division, 13, Acad. Lavrent' ev Avenue, Novosibirsk 630090 (Russian Federation)

    2014-03-03

    In the present paper, we propose a method for evaluating the bulk diffusion length of minority charge carriers in the photosensing layer of photovoltaic focal plane array (FPA) photodetectors. The method is based on scanning a strip-shaped illumination spot with one of the detector diodes at a low level of photocurrents j{sub ph} being registered; such scanning provides data for subsequent analysis of measured spot-scan profiles within a simple diffusion model. The asymptotic behavior of the effective (at j{sub ph} ≠ 0) charge-carrier diffusion length l{sub d} {sub eff} as a function of j{sub ph} for j{sub ph} → 0 inferred from our experimental data proved to be consistent with the behavior of l{sub d} {sub eff} vs j{sub ph} as predicted by the model, while the obtained values of the bulk diffusion length of minority carriers (electrons) in the p-HgCdTe film of investigated HgCdTe n-on-p FPA photodetectors were found to be in a good agreement with the previously reported carrier diffusion-length values for HgCdTe.

  5. HgCdTe Infrared Avalanche Photodiode Single Photon Detector Arrays for the LIST and Other Decadal Missions Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Develop a HgCdTe avalanche photodiode (APD)  SWIR/IR linear mode photon counting (LMPC) array detector system in support of the LIST lidar. Provide a new type...

  6. LPG gaseous phase electronic port injection on performance, emission and combustion characteristics of Lean Burn SI Engine

    Science.gov (United States)

    Bhasker J, Pradeep; E, Porpatham

    2016-08-01

    Gaseous fuels have always been established as an assuring way to lessen emissions in Spark Ignition engines. In particular, LPG resolved to be an affirmative fuel for SI engines because of their efficient combustion properties, lower emissions and higher knock resistance. This paper investigates performance, emission and combustion characteristics of a microcontroller based electronic LPG gaseous phase port injection system. Experiments were carried out in a single cylinder diesel engine altered to behave as SI engine with LPG as fuel at a compression ratio of 10.5:1. The engine was regulated at 1500 rpm at a throttle position of 20% at diverse equivalence ratios. The test results were compared with that of the carburetion system. The results showed that there was an increase in brake power output and brake thermal efficiency with LPG gas phase injection. There was an appreciable extension in the lean limit of operation and maximum brake power output under lean conditions. LPG injection technique significantly reduces hydrocarbon and carbon monoxide emissions. Also, it extremely enhances the rate of combustion and helps in extending the lean limit of LPG. There was a minimal increase of NOx emissions over the lean operating range due to higher temperature. On the whole it is concluded that port injection of LPG is best suitable in terms of performance and emission for LPG fuelled lean burn SI engine.

  7. Synchronized droplet size measurements for Coal-Water-Slurry (CWS) diesel sprays of an electronically-controlled fuel injection system

    Science.gov (United States)

    Kihm, K. D.; Terracina, D. P.; Payne, S. E.; Caton, J. A.

    Experiments were completed to study intermittent coal-water slurry (CWS) fuel sprays injected from an electronically-controlled accumulator injector system. A laser diffraction particle analyzing (LDPA) technique was used to measure the spray diameters (Sauter mean diameter, SMD) assuming the Rosin-Rammler two parameter model. In order to ensure an accurate synchronization of the measurement with the intermittent sprays, a new synchronization technique was developed using the light extinction signal as a triggering source for the data taking initiation. This technique allowed measurement of SMD's near the spray tip where the light extinction was low and the data were free from the multiscattering bias. Coal-water slurry fuel with 50% coal loading in mass containing 5 (mu)m mass median diameter coal particulates was considered. Injection pressures ranging from 28 to 110 MPa, two different nozzle orifice diameters, 0.2 ad 0.4 mm, and four axial measurement locations from 60 to 120 mm from the nozzle orifice were studied. Measurements were made for pressurized (2.0 MPa in gauge) and for ambient chamber conditions. The spray SMD showed an increase with the distance of the axial measurement location and with the ambient gas density, and showed a decrease with increasing injection pressure. A correlation of the Sauter mean diameter with the injection conditions was determined. The results were also compared with previous SMD correlations that were available only for diesel fuel sprays.

  8. Analysis of the Electrical Properties of an Electron Injection Layer in Alq3-Based Organic Light Emitting Diodes.

    Science.gov (United States)

    Kim, Soonkon; Choi, Pyungho; Kim, Sangsub; Park, Hyoungsun; Baek, Dohyun; Kim, Sangsoo; Choi, Byoungdeog

    2016-05-01

    We investigated the carrier transfer and luminescence characteristics of organic light emitting diodes (OLEDs) with structure ITO/HAT-CN/NPB/Alq3/Al, ITO/HAT-CN/NPB/Alq3/Liq/Al, and ITO/HAT-CN/NPB/Alq3/LiF/A. The performance of the OLED device is improved by inserting an electron injection layer (EIL), which induces lowering of the electron injection barrier. We also investigated the electrical transport behaviors of p-Si/Alq3/Al, p-Si/Alq3/Liq/Al, and p-Si/Alq3/LiF/Al Schottky diodes, by using current-voltage (L-V) and capacitance-voltage (C-V) characterization methods. The parameters of diode quality factor n and barrier height φ(b) were dependent on the interlayer materials between Alq3 and Al. The barrier heights φ(b) were 0.59, 0.49, and 0.45 eV, respectively, and the diode quality factors n were 1.34, 1.31, and 1.30, respectively, obtained from the I-V characteristics. The built in potentials V(bi) were 0.41, 0.42, and 0.42 eV, respectively, obtained from the C-V characteristics. In this experiment, Liq and LiF thin film layers improved the carrier transport behaviors by increasing electron injection from Al to Alq3, and the LiF schottky diode showed better I-V performance than the Liq schottky diode. We confirmed that a Liq or LiF thin film inter-layer governs electron and hole transport at the Al/Alq3 interface, and has an important role in determining the electrical properties of OLED devices.

  9. Natural dyes adsorbed on TiO2 nanowire for photovoltaic applications: enhanced light absorption and ultrafast electron injection.

    Science.gov (United States)

    Meng, Sheng; Ren, Jun; Kaxiras, Efthimios

    2008-10-01

    We investigate the electronic coupling between a TiO2 nanowire and a natural dye sensitizer, using state-of-the-art time-dependent first-principles calculations. The model dye molecule, cyanidin, is deprotonated into the quinonoidal form upon adsorption on the wire surface. This results in its highest occupied molecular orbital (HOMO) being located in the middle of the TiO2 bandgap and its lowest unoccupied molecular orbital (LUMO) being close to the TiO2 conduction band minimum (CBM), leading to greatly enhanced visible light absorption with two prominent peaks at 480 and 650 nm. We find that excited electrons are injected into the TiO2 conduction band within a time scale of 50 fs with negligible electron-hole recombination and energy dissipation, even though the dye LUMO is located 0.1-0.3 eV lower than the CBM of the TiO2 nanowire.

  10. Measurement of runaway electron energy distribution function during high-Z gas injection into runaway electron plateaus in DIII-Da)

    Energy Technology Data Exchange (ETDEWEB)

    Hollmann, E. M. [University of California—San Diego, 9500 Gilman Dr., La Jolla, California 92093, USA; Parks, P. B. [General Atomics, PO Box 85608, San Diego, California 92186, USA; Commaux, N. [Oak Ridge National Laboratory, PO Box 2008, Oak Ridge, Tennessee 37831, USA; Eidietis, N. W. [General Atomics, PO Box 85608, San Diego, California 92186, USA; Moyer, R. A. [University of California—San Diego, 9500 Gilman Dr., La Jolla, California 92093, USA; Shiraki, D. [Oak Ridge National Laboratory, PO Box 2008, Oak Ridge, Tennessee 37831, USA; Austin, M. E. [Institute for Fusion Studies, University of Texas—Austin, 2100 San Jacinto Blvd, Austin, Texas 78712, USA; Lasnier, C. J. [Lawrence Livermore National Laboratory, 7000 East Ave, Livermore, California 94550, USA; Paz-Soldan, C. [General Atomics, PO Box 85608, San Diego, California 92186, USA; Rudakov, D. L. [University of California—San Diego, 9500 Gilman Dr., La Jolla, California 92093, USA

    2015-05-01

    The evolution of the runaway electron (RE) energy distribution function fεfε during massive gas injection into centered post-disruption runaway electron plateaus has been reconstructed. Overall, fεfε is found to be much more skewed toward low energy than predicted by avalanche theory. The reconstructions also indicate that the RE pitch angle θ is not uniform, but tends to be large at low energies and small θ ∼ 0.1–0.2 at high energies. Overall power loss from the RE plateau appears to be dominated by collisions with background free and bound electrons, leading to line radiation. However, the drag on the plasma current appears to be dominated by collisions with impurity ions in most cases. Synchrotron emission appears not to be significant for overall RE energy dissipation but may be important for limiting the peak RE energy.

  11. A solid state paramagnetic maser device driven by electron spin injection

    NARCIS (Netherlands)

    Watts, S. M.; van Wees, B. J.

    2006-01-01

    In response to an external, microwave-frequency magnetic field, a paramagnetic medium will absorb energy from the field that drives the magnetization dynamics. Here we describe a new process by which an external spin-injection source, when combined with the microwave field spin pumping, can drive

  12. Electron-enhanced hole injection in blue polyfluorene-based polymer light-emitting diodes

    NARCIS (Netherlands)

    Woudenbergh, T. van; Wildeman, J.; Blom, P.W.M.; Bastiaansen, J.J.A.M.; Langeveld-Voss, B.M.W.

    2004-01-01

    It has recently been reported that, after electrical conditioning, an ohmic hole contact is formed in poly(9,9-dioctylfluorene) (PFO)-based polymer light-emitting diodes (PLED), despite the large hole-injection barrier obtained with a poly(styrene sulfonic acid)-doped poly(3,4-ethylenedioxythiophene

  13. A solid state paramagnetic maser device driven by electron spin injection

    NARCIS (Netherlands)

    Watts, S. M.; van Wees, B. J.

    2006-01-01

    In response to an external, microwave-frequency magnetic field, a paramagnetic medium will absorb energy from the field that drives the magnetization dynamics. Here we describe a new process by which an external spin-injection source, when combined with the microwave field spin pumping, can drive th

  14. Molecular-structure control of ultrafast electron injection at cationic porphyrin-CdTe quantum dot interfaces

    KAUST Repository

    Aly, Shawkat Mohammede

    2015-03-05

    Charge transfer (CT) at donor (D)/acceptor (A) interfaces is central to the functioning of photovoltaic and light-emitting devices. Understanding and controlling this process on the molecular level has been proven to be crucial for optimizing the performance of many energy-challenge relevant devices. Here, we report the experimental observations of controlled on/off ultrafast electron transfer (ET) at cationic porphyrin-CdTe quantum dot (QD) interfaces using femto- and nanosecond broad-band transient absorption (TA) spectroscopy. The time-resolved data demonstrate how one can turn on/off the electron injection from porphyrin to the CdTe QDs. With careful control of the molecular structure, we are able to tune the electron injection at the porphyrin-CdTe QD interface from zero to very efficient and ultrafast. In addition, our data demonstrate that the ET process occurs within our temporal resolution of 120 fs, which is one of the fastest times recorded for organic photovoltaics. © 2015 American Chemical Society.

  15. Indirect Band Gap Emission by Hot Electron Injection in Metal/MoS2 and Metal/WSe2 Heterojunctions

    Science.gov (United States)

    Li, Zhen; Ezhilarasu, Goutham; Chatzakis, Ioannis; Dhall, Rohan; Chen, Chun-Chung; Cronin, Stephen

    Transition metal dichalcogenides (TMDCs), such as MoS2 and WSe2, are free of dangling bonds, therefore make more `ideal' Schottky junctions than bulk semiconductors, which produce recombination centers at the interface with metals, inhibiting charge transfer. Here, we observe a more than 10X enhancement in the indirect band gap PL of TMDCs deposited on various metals, while the direct band gap emission remains unchanged. We believe the main mechanism of light emission arises from photoexcited hot electrons in the metal that are injected into the conduction band of MoS2 and WSe2, and subsequently recombine radiatively with minority holes. Since the conduction band at the K-point is 0.5eV higher than at the Σ-point, a lower Schottky barrier of the Σ-point band makes electron injection more favorable. Also, the Σ band consists of the sulfur pz orbital, which overlaps more significantly with the electron wavefunctions in the metal. This enhancement only occurs for thick flakes, and is absent in monolayer and few-layer flakes. Here, the flake thickness must exceed the depletion width of the Schottky junction, in order for efficient radiative recombination to occur in the TMDC. The intensity of this indirect peak decreases at low temperatures. Reference: DOI: 10.1021/acs.nanolett.5b00885

  16. Charging behavior of Al2O3 and AlN under positive and negative charge injection using a kV electron beam

    Science.gov (United States)

    Belhaj, M.; Paulmier, T.; Hanna, R.; Arnaout, M.; Balcon, N.; Payan, D.; Puech, J.

    2014-02-01

    Under electron irradiation, insulating materials may charge either negatively or positively depending on their electron emission properties and characteristics of the incident electrons. The electrical behavior of these materials is linked to the sign of the injected charge. The aim here is to describe an electron beam based method that can be used to study the electrical behaviors of insulators under either positive or negative charge injection. The method was tested on ceramics samples, Al2O3 and AlN. It was shown that the electrical behaviors of both materials under e-irradiation are very different according the sign of the injected charge. Negative charging results to stable space charge for Al2O3 and on the contrary it leads to a fast charge-decay for AlN. Remarkably, reversed trends are observed for positive charge injection. The practical consequences of these results are then discussed.

  17. Charging behavior of Al{sub 2}O{sub 3} and AlN under positive and negative charge injection using a kV electron beam

    Energy Technology Data Exchange (ETDEWEB)

    Belhaj, M., E-mail: Mohamed.Belhaj@onera.fr [ONERA, The French Aerospace Lab, 31055 Toulouse (France); Paulmier, T.; Hanna, R.; Arnaout, M. [ONERA, The French Aerospace Lab, 31055 Toulouse (France); Balcon, N.; Payan, D.; Puech, J. [CNES, Av Edourad Belin, Toulouse (France)

    2014-02-01

    Under electron irradiation, insulating materials may charge either negatively or positively depending on their electron emission properties and characteristics of the incident electrons. The electrical behavior of these materials is linked to the sign of the injected charge. The aim here is to describe an electron beam based method that can be used to study the electrical behaviors of insulators under either positive or negative charge injection. The method was tested on ceramics samples, Al{sub 2}O{sub 3} and AlN. It was shown that the electrical behaviors of both materials under e-irradiation are very different according the sign of the injected charge. Negative charging results to stable space charge for Al{sub 2}O{sub 3} and on the contrary it leads to a fast charge-decay for AlN. Remarkably, reversed trends are observed for positive charge injection. The practical consequences of these results are then discussed.

  18. Electronic temperatures of terahertz quantum cascade active regions with phonon scattering assisted injection and extraction scheme.

    Science.gov (United States)

    Patimisco, Pietro; Scamarcio, Gaetano; Santacroce, Maria Vittoria; Spagnolo, Vincenzo; Vitiello, Miriam Serena; Dupont, Emmanuel; Laframboise, Sylvain R; Fathololoumi, Saeed; Razavipour, Ghasem S; Wasilewski, Zbigniew

    2013-04-22

    We measured the lattice and subband electronic temperatures of terahertz quantum cascade devices based on the optical phonon-scattering assisted active region scheme. While the electronic temperature of the injector state (j = 4) significantly increases by ΔT = T(e)(4) - T(L) ~40 K, in analogy with the reported values in resonant phonon scheme (ΔT ~70-110 K), both the laser levels (j = 2,3) remain much colder with respect to the latter (by a factor of 3-5) and share the same electronic temperature of the ground level (j = 1). The electronic population ratio n(2)/n(1) shows that the optical phonon scattering efficiently depopulates the lower laser level (j = 2) up to an electronic temperature T(e) ~180 K.

  19. An electron spin injection driven, paramagnetic solid-state MASER device

    OpenAIRE

    Watts, S. M.; van Wees, B. J.

    2006-01-01

    In response to an external, microwave-frequency magnetic field, a paramagnetic medium will absorb energy from the field that drives the magnetization dynamics. Here we describe a new process by which an external spin injection source, when combined with the microwave field spin-pumping, can drive the paramagnetic medium from one that absorbs microwave energy to one that emits microwave energy. We derive a simple condition for the crossover from absorptive to emissive behavior. Based on this p...

  20. An electro-optical and electron injection study of benzothiazole-based squaraine dyes as efficient dye-sensitized solar cell materials: a first principles study.

    Science.gov (United States)

    Al-Fahdan, Najat Saeed; Asiri, Abdullah M; Irfan, Ahmad; Basaif, Salem A; El-Shishtawy, Reda M

    2014-12-01

    Squaraine dyes have attracted significant attention in many areas of daily life from biomedical imaging to semiconducting materials. Moreover, these dyes are used as photoactive materials in the field of solar cells. In the present study, we investigated the structural, electronic, photophysical, and charge transport properties of six benzothiazole-based squaraine dyes (Cis-SQ1-Cis-SQ3 and Trans-SQ1-Trans-SQ3). The effect of electron donating (-OCH3) and electron withdrawing (-COOH) groups was investigated intensively. Ground state geometry and frequency calculations were performed by applying density functional theory (DFT) at B3LYP/6-31G** level of theory. Absorption spectra were computed in chloroform at the time-dependent DFT/B3LYP/6-31G** level of theory. The driving force of electron injection (ΔG (inject)), relative driving force of electron injection (ΔG r (inject)), electronic coupling constants (|VRP|) and light harvesting efficiency (LHE) of all six compounds were calculated and compared with previously studied sensitizers. The ΔG (inject), ΔG r (inject) and |VRP| of all six compounds revealed that these sensitizers would be efficient dye-sensitized solar cell materials. Cis/Trans-SQ3 exhibited superior LHE as compared to other derivatives. The Cis/Trans geometric effect was studied and discussed with regard to electro-optical and charge transport properties.

  1. Modelling the Multi-band Afterglow of GRB 091127: Evidence of a Hard Electron Energy Spectrum with an Injection Break

    CERN Document Server

    Zhang, Qiang; Zong, Hong-Shi

    2016-01-01

    The afterglow of GRBs is believed to originate from the synchrotron emission of shock-accelerated electrons produced by the interaction between the outflow and the external medium. The accelerated electrons are usually assumed to follow a power law energy distribution with an index of $p$. Observationally, although most GRB afterglows have a $p$ larger than 2, there are still a few GRBs suggestive of a hard ($p<2$) electron spectrum. GRB 091127, with well-sampled broad-band afterglow data, shows evidence of a hard electron spectrum and strong spectral evolution, with a spectral break moving from high to lower energies. The spectral break evolves very fast and cannot be explained by the cooling break in the standard afterglow model, unless evolving microphysical parameters are assumed. Besides, the multi-band afterglow light curves show an achromatic break at around 33 ks. Based on the model of a hard electron spectrum with an injection break, we interpret the observed spectral break as the synchrotron freq...

  2. Improved performance of the JAERI injection and free electron laser system

    CERN Document Server

    Nishimori, N; Hajima, R; Shizuma, T; Sawamura, M; Kikuzawa, N; Minehara, E J

    2000-01-01

    Several modifications have been made for the JAERI Free Electron Laser (FEL) system in order to extract greater average lasing power. The electron gun was improved to produce an electron beam with 1 ns pulse width, 600 mA peak current, amplitude fluctuation less than 1% and timing jitter less than 0.1 ns. In addition, the 180 deg. bending arc was modified to match the beam envelope inside the undulator. After these modifications, we obtained an FEL power of 180 W in macro-pulse average at wavelength of 23 mu m.

  3. Investigation of possibility of VLWIR lasing in HgCdTe based heterostructures

    Science.gov (United States)

    Morozov, S. V.; Rumyantsev, V. V.; Kadykov, A. M.; Dubinov, A. A.; Antonov, A. V.; Kudryavtsev, K. E.; Kuritsin, D. I.; Mikhailov, N. N.; Dvoretskii, S. A.; Teppe, F.; Gavrilenko, V. I.

    2015-10-01

    The optical properties of a number of Hg1-xCdxTe bulk epilayers (x = 0.152 - 0.23) and heterostructures with quantum wells (QW) based on narrow gap HgCdTe are examined aiming to reveal the prospects of such structures for laser development in long wave infrared and very long wave infrared ranges. Experimental evidence of long wavelength superluminescence, i.e. amplification of spontaneous emission, at 8.4 μm in narrow gap HgCdTe bulk epitaxial film at 100 K is reported. Employing heterostructures with QW is demonstrated to be promissory for furthering the radiation wavelength to 10 - 30 μm range.

  4. Optical second harmonic generation measurements for investigating electron injection into a pentacene field effect transistor with Au source and drain electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Eunju; Manaka, Takaaki; Tamura, Ryosuke [Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552 (Japan); Iwamoto, Mitsumasa [Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)], E-mail: iwamoto@pe.titech.ac.jp

    2008-03-03

    The pentacene field effect transistors (FETs)' operation for the injection carrier was revealed by means of the drain current-elapsed time (I{sub ds}-t) and optical second harmonic generation (SHG) measurements. The charge carriers forming the conducting channel of pentacene FETs were mainly holes injected from the Au source electrode. Carrier injection from source and drain electrodes was followed by the carrier trapping, and the SHG signal modulated by the change in the electric field distribution between Au the source and drain electrodes was shown. In particular, at the off state of the FET, electron injection and succeeding trapping were suggested. Furthermore, hole injection assisted by trapped electrons was also suggested.

  5. Influence of polymeric electron injection layers on the electrical properties of solution-processed multilayered polymer light-emitting diodes

    Science.gov (United States)

    Itoh, Eiji; Kurami, Kazuhiko

    2016-02-01

    In this study, we fabricated multilayered polymer-based light-emitting diodes (pLEDs) with various solution-processed electron-injection layers (EILs), and investigated the influence of the EILs on the electrical properties of pLEDs in indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonic acid) (PEDOT:PSS)/poly[(9,9-dioctylfluorene-alt-(1,4-phenylene((4-sec-butylphenyl)amino)-1,4-phenylene))] (TFB) (HTL)/poly(9,9-dioctylfluorene-alt-1,4-benzothiadiazole) (F8BT) (EML)/EIL/Al structures. We have used the quaternized ammonium π-conjugated polyelectrolyte derivative (poly[(9,9-di(3,3‧-N,N‧-trimethylammonium)propylfluorenyl-2,7-diyl)-co-(1,4-phenylene)]diiodide salt) (PF-PDTA), a mixture of PF-PDTA and CS2CO3, and the aliphatic-amine-based polymer poly(ethylene imine) (PEI) as solution-processed EILs, and compared them with LiF as a solvent-free EIL. The EILs enhanced the electron injection and improve the pLED performance. High external quantum efficiencies of nearly 4% were obtained in the pLEDs with the combination of a multilayered structure fabricated by a transfer printing technique and EILs of a PF-PDTA:CS2CO3 mixture and PEI. On the other hand, the device with PF-PDTA exhibited lower efficiency, higher driving voltage, and larger leakage current at lower voltage. The migration of ionic charges was suggested from the abnormal dielectric behaviors, and serious damage on the electrode material occurred when both an acid hole-injection layer (PEDOT:PSS) and PF-PDTA were used. On the other hand, the pLEDs with ultrathin PEI showed high performance and stable device operation in terms of the influence of ionic charges.

  6. Update on Linear Mode Photon Counting with the HgCdTe Linear Mode Avalanche Photodiode

    Science.gov (United States)

    Beck, Jeffrey D.; Kinch, Mike; Sun, Xiaoli

    2014-01-01

    The behavior of the gain-voltage characteristic of the mid-wavelength infrared cutoff HgCdTe linear mode avalanche photodiode (e-APD) is discussed both experimentally and theoretically as a function of the width of the multiplication region. Data are shown that demonstrate a strong dependence of the gain at a given bias voltage on the width of the n- gain region. Geometrical and fundamental theoretical models are examined to explain this behavior. The geometrical model takes into account the gain-dependent optical fill factor of the cylindrical APD. The theoretical model is based on the ballistic ionization model being developed for the HgCdTe APD. It is concluded that the fundamental theoretical explanation is the dominant effect. A model is developed that combines both the geometrical and fundamental effects. The model also takes into account the effect of the varying multiplication width in the low bias region of the gain-voltage curve. It is concluded that the lower than expected gain seen in the first 2 × 8 HgCdTe linear mode photon counting APD arrays, and higher excess noise factor, was very likely due to the larger than typical multiplication region length in the photon counting APD pixel design. The implications of these effects on device photon counting performance are discussed.

  7. Candidate 10 micron HgCdTe arrays for the NEOCam space mission

    Science.gov (United States)

    McMurtry, Craig W.; Dorn, Meghan; Cabrera, Mario S.; Pipher, Judith L.; Forrest, William J.; Mainzer, Amy K.; Wong, Andre

    2016-08-01

    The Near Earth Object Camera (NEOCam, Mainzer et al. 2015) is one of five NASA Discovery Class mission experiments selected for Phase A: down-select to one or two experiments will take place late in 2016. NEOCam will survey the sky in search of asteroids and comets, particularly those close to the Earth's orbit. The NEOCam infrared telescope will have two infrared (IR) channels; one covering 4 to 5 microns, and one covering 6-10 microns. Both IR cameras will use multiple 2Kx2K pixel format HAWAII-2RG arrays with different cutoff wavelength HgCdTe detectors from Teledyne Imaging Sensors. Past development work by the University of Rochester with Teledyne Imaging Sensors and JPL (McMurtry et al. 2013, Dorn et al. 2016) focused upon bringing the 10 micron HgCdTe detector technology up to NASA TRL 6+. This work extends that development program to push the format from 1Kx1K to the larger 2Kx2K pixel array. We present results on the first 2Kx2K candidate 10 micron cutoff HgCdTe arrays, where we measured the dark current, read noise, and total noise.

  8. Update on Linear Mode Photon Counting with the HgCdTe Linear Mode Avalanche Photodiode

    Science.gov (United States)

    Beck, Jeffrey D.; Kinch, Mike; Sun, Xiaoli

    2014-01-01

    The behavior of the gain-voltage characteristic of the mid-wavelength infrared cutoff HgCdTe linear mode avalanche photodiode (e-APD) is discussed both experimentally and theoretically as a function of the width of the multiplication region. Data are shown that demonstrate a strong dependence of the gain at a given bias voltage on the width of the n- gain region. Geometrical and fundamental theoretical models are examined to explain this behavior. The geometrical model takes into account the gain-dependent optical fill factor of the cylindrical APD. The theoretical model is based on the ballistic ionization model being developed for the HgCdTe APD. It is concluded that the fundamental theoretical explanation is the dominant effect. A model is developed that combines both the geometrical and fundamental effects. The model also takes into account the effect of the varying multiplication width in the low bias region of the gain-voltage curve. It is concluded that the lower than expected gain seen in the first 2 × 8 HgCdTe linear mode photon counting APD arrays, and higher excess noise factor, was very likely due to the larger than typical multiplication region length in the photon counting APD pixel design. The implications of these effects on device photon counting performance are discussed.

  9. Proton irradiation results for long-wave HgCdTe infrared detector arrays for NEOCam

    CERN Document Server

    Dorn, M; McMurtry, C; Hartman, S; Mainzer, A; McKelvey, M; McMurray, R; Chevara, D; Rosser, J

    2016-01-01

    HgCdTe detector arrays with a cutoff wavelength of ~10 ${\\mu}$m intended for the NEOCam space mission were subjected to proton beam irradiation at the University of California Davis Crocker Nuclear Laboratory. Three arrays were tested - one with 800 $\\mu$m substrate intact, one with 30 $\\mu$m substrate, and one completely substrate-removed. The CdZnTe substrate, on which the HgCdTe detector is grown, has been shown to produce luminescence in shorter wave HgCdTe arrays that causes elevated signal in non-hit pixels when subjected to proton irradiation. This testing was conducted to ascertain whether or not full substrate removal is necessary. At the dark level of the dewar, we detect no luminescence in non-hit pixels during proton testing for both the substrate-removed detector array and the array with 30 ${\\mu}$m substrate. The detector array with full 800 ${\\mu}$m substrate exhibited substantial photocurrent for a flux of 103 protons/cm$^2$-s at a beam energy of 18.1 MeV (~ 750 e$^-$/s) and 34.4 MeV ($\\sim$ 6...

  10. Spin-assembled nanolayer of a hyperbranched polymer on the anode in organic light-emitting diodes: the mechanism of hole injection and electron blocking.

    Science.gov (United States)

    Lee, Tae-Woo; Park, Jong-Jin; Kwon, Young; Hayakawa, Teruaki; Choi, Tae-Lim; Park, Jong Hyeok; Das, Rupasree Ragini; Kakimoto, Masa-aki

    2008-11-04

    We introduced a spin-assembled nanolayer of hyperbranched poly(ether sulfone) with sulfonic acid terminal on top of an indium-tin oxide anode in organic light-emitting diodes. This results in great improvement in luminous efficiency, better than that of devices using a commercially available conducting polymer composition as a hole-injection layer. The effect of the nanolayer was investigated by impedance spectroscopy, photovoltaic measurement for built-in-potential, and transient electroluminescence. We concluded that the high luminous efficiency resulted from the efficient electron-blocking by the nanolayer and hole-injection assisted by the accumulation of electrons at the interface. This result implies that, for an efficient hole-injection layer, the electron-blocking capability should be incorporated in addition to the hole-injection and -transport capability.

  11. New basic insights into the low hot electron injection efficiency of gold-nanoparticle-photosensitized titanium dioxide.

    Science.gov (United States)

    Ma, Xiangchao; Dai, Ying; Yu, Lin; Huang, Baibiao

    2014-08-13

    The low hot electrons injection efficiency (HEIE) from plasmonic metal to semiconductor significantly affects the performance of metal-semiconductor composite. However, there are few reports about the origin of this low HEIE. In the present work, the factors affecting the transfer process and generation efficiency of hot electron in Au@TiO2 composite are investigated using first-principles calculations and Maxwell's electrodynamics theory. The occupation of surface oxygen vacancies of TiO2 by gold atoms is found to increase the hot electrons transfer barrier and expand the space charge region, which decrease the HEIE. In addition, the existing Au@TiO2 structure going against the generation of large amount of hot electrons may also lead to low HEIE. Our results reveal that the replacement of divalent host oxygen atoms with monovalent atoms can decrease the HEIE and comparison with experimental results allows us to validate our predictions. Furthermore, proper surface treatment of semiconductor before depositing metal particles and structure optimization of the composite are suggested to improve the HEIE.

  12. Effect of surface fields on the dynamic resistance of planar HgCdTe mid-wavelength infrared photodiodes

    Science.gov (United States)

    He, Kai; Zhou, Song-Min; Li, Yang; Wang, Xi; Zhang, Peng; Chen, Yi-Yu; Xie, Xiao-Hui; Lin, Chun; Ye, Zhen-Hua; Wang, Jian-Xin; Zhang, Qin-Yao

    2015-05-01

    This work investigates the effect of surface fields on the dynamic resistance of a planar HgCdTe mid-wavelength infrared photodiode from both theoretical and experimental aspects, considering a gated n-on-p diode with the surface potential of its p-region modulated. Theoretical models of the surface leakage current are developed, where the surface tunnelling current in the case of accumulation is expressed by modifying the formulation of bulk tunnelling currents, and the surface channel current for strong inversion is simulated with a transmission line method. Experimental data from the fabricated devices show a flat-band voltage of V F B = - 5.7 V by capacitance-voltage measurement, and then the physical parameters for bulk properties are determined from the resistance-voltage characteristics of the diode working at a flat-band gate voltage. With proper values of the modeling parameters such as surface trap density and channel electron mobility, the theoretical R 0 A product and corresponding dark current calculated from the proposed model as functions of the gate voltage Vg demonstrate good consistency with the measured values. The R 0 A product remarkably degenerates when Vg is far below or above VFB because of the surface tunnelling current or channel current, respectively; and it attains the maximum value of 5.7 × 10 7 Ω . cm 2 around the transition between surface depletion and weak inversion when V g ≈ - 4 V , which might result from reduced generation-recombination current.

  13. TEQUILA: NIR camera/spectrograph based on a Rockwell 1024x1024 HgCdTe FPA

    Science.gov (United States)

    Ruiz, Elfego; Sohn, Erika; Cruz-Gonzales, Irene; Salas, Luis; Parraga, Antonio; Perez, Manuel; Torres, Roberto; Cobos Duenas, Francisco J.; Gonzalez, Gaston; Langarica, Rosalia; Tejada, Carlos; Sanchez, Beatriz; Iriarte, Arturo; Valdez, J.; Gutierrez, Leonel; Lazo, Francisco; Angeles, Fernando

    1998-08-01

    We describe the configuration and operation modes of the IR camera/spectrograph: TEQUILA based on a 1024 X 1024 HgCdTe FPA. The optical system will allow three possible modes of operation: direct imaging, low and medium resolution spectroscopy and polarimetry. The basic system is being designed to consist of the following: 1) A LN(subscript 2) dewar that allocates the FPA together with the preamplifiers and a 24 filter position cylinder. 2) Control and readout electronics based on DSP modules linked to a workstation through fiber optics. 3) An opto-mechanical assembly cooled to -30 degrees that provides an efficient operation of the instrument in its various modes. 4) A control module for the moving parts of the instrument. The opto-mechanical assembly will have the necessary provision to install a scanning Fabry-Perot interferometer and an adaptive optics correction system. The final image acquisition and control of the whole instrument is carried out in a workstation to provide the observer with a friendly environment. The system will operate at the 2.1 m telescope at the Observatorio Astronomico Nacional in San Pedro Martir, B.C. (Mexico), and is intended to be a first-light instrument for the new 7.8m Mexican IR-Optical Telescope.

  14. Electron Injection from Copper Diimine Sensitizers into TiO2

    DEFF Research Database (Denmark)

    Mara, Michael W.; Bowman, David N.; Buyukcakir, Onur

    2015-01-01

    Copper(I) diimine complexes have emerged as low cost replacements for ruthenium complexes as light sensitizers and electron donors, but their shorter metal-to-ligand-charge-transfer (MLCT) states lifetimes and lability of transient Cu(II) species impede their intended functions. Two carboxylated ...

  15. Beyond vibrationally mediated electron transfer: interfacial charge injection on a sub-10-fs time scale

    Science.gov (United States)

    Huber, Robert; Moser, Jacques E.; Gratzel, Michael; Wachtveitl, Josef L.

    2003-12-01

    The electron transfer (ET) from organic dye molecules to semiconductor-colloidal systems is characterized by a special energetic situation with a charge transfer reaction from a system of discrete donor levels to a continuum of acceptor states. If these systems show a strong electronic coupling they are amongst the fastest known ET systems with transfer times of less than 10 fs. In the first part a detailed discussion of the direct observation of an ET reaction with a time constant of about 6 fs will be given, with an accompanying argumentation concerning possible artifacts or other interfering signal contributions. In a second part we will try to give a simple picture for the scenario of such superfast ET reactions and one main focus will be the discussion of electronic dephasing and its consequences for the ET reaction. The actual ET process can be understood as a kind of dispersion process of the initially located electron into the colloid representing a real motion of charge density from the alizarin to the colloid.

  16. Ultrafast electron injection at the cationic porphyrin-graphene interface assisted by molecular flattening

    KAUST Repository

    Aly, Shawkat Mohammede

    2014-01-01

    The steady-state and femtosecond (fs) time-resolved data clearly demonstrate that the charge transfer (CT) process at the porphyrin-graphene carboxylate (GC) interfaces can be tuned from zero to very sufficient and ultrafast by changing the electronic structure of the meso unit and the redox properties of the porphyrin cavity. This journal is © the Partner Organisations 2014.

  17. Impact of the Anchoring Ligand on Electron Injection and Recombination Dynamics at the Interface of Novel Asymmetric Push-Pull Zinc Phthalocyanines and TiO2

    NARCIS (Netherlands)

    Sharma, Divya; Steen, Gerrit Willem; Korterik, Jeroen P.; Garcia-Iglesias, M.; Vazquez, P; Torres, T.; Herek, Jennifer Lynn; Huijser, Jannetje Maria

    2013-01-01

    Phthalocyanines are promising photosensitizers for dye-sensitized solar cells (DSSCs). A parameter that has been problematic for a long time involves electron injection (EI) into the TiO2. The development of push-pull phthalocyanines shows great potential to improve the ratio of EI to back electron

  18. Impact of the Anchoring Ligand on Electron Injection and Recombination Dynamics at the Interface of Novel Asymmetric Push-Pull Zinc Phthalocyanines and TiO2

    NARCIS (Netherlands)

    Sharma, D.; Steen, G.W.; Korterik, J.P.; Garcia-Iglesias, M.; Vazquez, P; Torres, T.; Herek, J.L.; Huijser, J.M.

    2013-01-01

    Phthalocyanines are promising photosensitizers for dye-sensitized solar cells (DSSCs). A parameter that has been problematic for a long time involves electron injection (EI) into the TiO2. The development of push-pull phthalocyanines shows great potential to improve the ratio of EI to back electron

  19. Simulation study of electron injection into plasma wake fields by colliding laser pulses using OOPIC

    Institute of Scientific and Technical Information of China (English)

    HE An; GAO Jie; ZHU Xiong-Wei; LI Da-Zhang; XU Hong-Liang

    2009-01-01

    An electron injector concept for a laser-plasma accelerator has been developed which relies on the use of counter propagating ultrashort laser pulses.In this paper,we use OOPIC the fully self-consistent,twodimensional.particle-in-cell code to make a parameter study to determine the bunches that can be obtained through collisions of two collinear laser pulses in uniform plasma.A series of simulations show that one can obtain a short(<10fs)bunch with its charge of about 15pC,and energy spread of about 15%.We also discussed the variation of the transverse spot size of the electron bunch and found the bunch would undergo the betatron oscillations.

  20. Simulations of the Acceleration of Externally Injected Electrons in a Plasma Excited in the Linear Regime

    CERN Document Server

    Delerue, Nicolas; Jenzer, Stéphane; Kazamias, Sophie; Lucas, Bruno; Maynard, Gilles; Pittman, Moana

    2016-01-01

    We have investigated numerically the coupling between a 10 \\si{MeV} electron bunch of high charge (\\SI{> 100}{pc}) with a laser generated accelerating plasma wave. Our results show that a high efficiency coupling can be achieved using a \\SI{50}{TW}, \\SI{100}{\\micro \\meter} wide laser beam, yielding accelerating field above \\SI{1}{ GV/m}. We propose an experiment where these predictions could be tested.

  1. Role of direct laser acceleration in energy gained by electrons in a laser wakefield accelerator with ionization injection

    CERN Document Server

    Shaw, J L; Vafaei-Najafabadi, N; Marsh, K A; Lemos, N; Mori, W B; Joshi, C

    2014-01-01

    We have investigated the role that the transverse electric field of the laser plays in the acceleration of electrons in a laser wakefield accelerator (LWFA) operating in the quasi-blowout regime through particle-in-cell code simulations. In order to ensure that longitudinal compression and/or transverse focusing of the laser pulse is not needed before the wake can self-trap the plasma electrons, we have employed the ionization injection technique. Furthermore, the plasma density is varied such that at the lowest densities, the laser pulse occupies only a fraction of the first wavelength of the wake oscillation (the accelerating bucket), whereas at the highest density, the same duration laser pulse fills the entire first bucket. Although the trapped electrons execute betatron oscillations due to the ion column in all cases, at the lowest plasma density they do not interact with the laser field and the energy gain is all due to the longitudinal wakefield. However, as the density is increased, there can be a sig...

  2. The Influence of Neutral Beam Injection on the Heating and Current Drive with Electron Cyclotron Wave on EAST

    Science.gov (United States)

    Chang, Pengxiang; Wu, Bin; Wang, Jinfang; Li, Yingying; Wang, Xiaoguang; Xu, Handong; Wang, Xiaojie; Liu, Yong; Zhao, Hailin; Hao, Baolong; Yang, Zhen; Zheng, Ting; Hu, Chundong

    2016-11-01

    Both neutral beam injection (NBI) and electron cyclotron resonance heating (ECRH) have been applied on the Experimental Advanced Superconducting Tokamak (EAST) in the 2015 campaign. In order to achieve more effective heating and current drive, the effects of NBI on the heating and current drive with electron cyclotron wave (ECW) are analyzed utilizing the code TORAY and experimental data in the shot #54411 and #54417. According to the experimental and simulated results, for the heating with ECW, NBI can improve the heating efficiency and move the power deposition place towards the inside of the plasma. On the other hand, for the electron cyclotron current drive (ECCD), NBI can also improve the efficiency of ECCD and move the place of ECCD inward. These results will be valuable for the center heating, the achievement of fully non-inductive current drive operation and the suppression of magnetohydrodynamic (MHD) instabilities with ECW on EAST or ITER with many auxiliary heating methods. supported by the National Magnetic Confinement Fusion Science Program of China (Nos. 2013GB101001 and 2014DFG61950) and National Natural Science Foundation of China (Nos. 11405212 and 11175211)

  3. Electrochemical Reduction of Carbon Dioxide to Methanol by Direct Injection of Electrons into Immobilized Enzymes on a Modified Electrode.

    Science.gov (United States)

    Schlager, Stefanie; Dumitru, Liviu Mihai; Haberbauer, Marianne; Fuchsbauer, Anita; Neugebauer, Helmut; Hiemetsberger, Daniela; Wagner, Annika; Portenkirchner, Engelbert; Sariciftci, Niyazi Serdar

    2016-03-21

    We present results for direct bio-electrocatalytic reduction of CO2 to C1 products using electrodes with immobilized enzymes. Enzymatic reduction reactions are well known from biological systems where CO2 is selectively reduced to formate, formaldehyde, or methanol at room temperature and ambient pressure. In the past, the use of such enzymatic reductions for CO2 was limited due to the necessity of a sacrificial co-enzyme, such as nicotinamide adenine dinucleotide (NADH), to supply electrons and the hydrogen equivalent. The method reported here in this paper operates without the co-enzyme NADH by directly injecting electrons from electrodes into immobilized enzymes. We demonstrate the immobilization of formate, formaldehyde, and alcohol dehydrogenases on one-and-the-same electrode for direct CO2 reduction. Carbon felt is used as working electrode material. An alginate-silicate hybrid gel matrix is used for the immobilization of the enzymes on the electrode. Generation of methanol is observed for the six-electron reduction with Faradaic efficiencies of around 10%. This method of immobilization of enzymes on electrodes offers the opportunity for electrochemical application of enzymatic electrodes to many reactions in which a substitution of the expensive sacrificial co-enzyme NADH is desired.

  4. Self-Assembled Monolayers of Perfluoroanthracenylaminoalkane Thiolates on Gold as Potential Electron Injection Layers.

    Science.gov (United States)

    Zhang, Zibin; Wächter, Tobias; Kind, Martin; Schuster, Swen; Bats, Jan W; Nefedov, Alexei; Zharnikov, Michael; Terfort, Andreas

    2016-03-23

    As a material with relatively small band gap and low lying valence orbitals, perfluoroanthracene (PFA) is of interest for the modification of electrode surfaces, for example, as charge injection layers for n-type organic semiconductors. To covalently attach PFA in the form of self-assembled monolayers (SAMs), we developed a synthesis of derivatives with a sulfur termination, linked to the 2-position of the PFA moieties by an -NH- group and a short alkane chain with two and three methylene groups, respectively. Spectroscopic characterization of the SAMs reveals that the molecules adopt an almost upright orientation on the gold surface, with the packing density mostly determined by the steric demands of the PFA units. The number of the methylene groups in the -NH-alkyl linker has only a minor impact on the SAM structure because of the nonsymmetric attachment of the PFA units, which permits the compensation of the orientational constraints imposed by the bending potential. The investigated SAMs alter the work function of gold by +(0.59-0.64) eV, suggesting comparably strong depolarization effects, affecting the extent of the work function modification.

  5. Mathematical Modeling of Fuel Pressure inside High Pressure Fuel Pipeline of Combination Electronic Unit Pump Fuel Injection System

    Directory of Open Access Journals (Sweden)

    Qaisar Hayat

    2013-08-01

    Full Text Available In order to completely understand the trend of pressure variations inside High Pressure (HP fuel pipeline of Combination Electronic Unit Pump (CEUP fuel injection system and study the impact of two major physical properties of fuel i.e., density and dynamic viscosity on pressure a 1D nonlinear dynamic mathematical model of fuel pressure inside pipeline using Wave Equation (WE has been developed in MATLAB using finite difference method. The developed model is based on the structural parameters of CEUP fuel injection system. The impact of two major physical properties of the fuel has been studied as a function of pressure at various operating conditions of diesel engine. Nearly 13.13 bars of increase in pressure is observed by increasing the density from 700 kg/m3 to 1000 kg/m3. Whereas an increase of viscosity from 2 kg/m.s to 6 kg/m.s results in decrease of pressures up to 44.16 bars. Pressure corrections in the mathematical model have been incorporated based on variations of these two fuel properties with the pressure. The resultant pressure profiles obtained from mathematical model at various distances along the pipeline are verified by correlating them with the profiles obtained from simulated AMESim numerical model of CEUP. The results show that MATLAB mathematical results are quite coherent with the AMESim simulated results and validate that the model is an effective tool for predicting pressure inside HP pipelines. The application of the this mathematical model with minute changes can therefore be extended to pressure modeling inside HP rail of Common Rail (CR fuel injection system.

  6. Performance and combustion analysis of Mahua biodiesel on a single cylinder compression ignition engine using electronic fuel injection system

    Directory of Open Access Journals (Sweden)

    Gunasekaran Anandkumar

    2016-01-01

    Full Text Available In this investigation, experiment is carried out on a 1500 rpm constant speed single cylinder Diesel engine. The test is carried out with Neat diesel, neat biodiesel, and blend B20. The engine considered was run with electronic fuel injection system supported by common rail direct injection to obtain high atomization and effective air utilization inside the combustion chamber. The performance of the engine in terms of break thermal efficiency and brake specific energy consumption was found and compared. The B20 blend shows 1.11% decrease in break thermal efficiency and 3.35% increase in brake specific energy consumption than diesel. The combustion characteristics found are in-cylinder pressure, rate of pressure rise, and heat release rate and compared for peak pressure load to understand the nature of combustion process. For each fuel test run, the maximum peak pressure is observed at part load condition. The rate of change of pressure and heat release rate of diesel is high compared to pure biodiesel and B20 blend. The diffusion combustion is observed to be predominant in case of B100 than B20 and Neat diesel.

  7. Automated resolution of dichlorvos and methylparaoxon pesticide mixtures employing a Flow Injection system with an inhibition electronic tongue.

    Science.gov (United States)

    Valdés-Ramírez, G; Gutiérrez, M; Del Valle, M; Ramírez-Silva, M T; Fournier, D; Marty, J-L

    2009-01-01

    An amperometric biosensor array has been developed to resolve pesticide mixtures of dichlorvos and methylparaoxon. The biosensor array has been used in a Flow Injection system, in order to operate automatically the inhibition procedure. The sensors used were three screen-printed amperometric biosensors that incorporated three different acetylcholinesterase enzymes: the wild type from Electric eel and two different genetically modified enzymes, B1 and B394 mutants, from Drosophila melanogaster. The inhibition response triplet was modelled using an Artificial Neural Network which was trained with mixture solutions that contain dichlorvos from 10(-4) to 0.1 microM and methylparaoxon from 0.001 to 2.5 microM. This system can be considered an inhibition electronic tongue.

  8. Tuning of magnetic optical response in a dielectric nanoparticle by ultrafast photo-injection of dense electron-hole plasma

    CERN Document Server

    Makarov, Sergey; Mukhin, Ivan; Mozharov, Alexey; Milichko, Valentin; Krasnok, Alexander; Belov, Pavel

    2015-01-01

    We propose a novel approach for efficient tuning of optical properties of a high refractive index subwavelength nanoparticle with a magnetic Mie-type resonance by means of femtosecond laser irradiation. This concept is based on ultrafast photo-injection of dense (>10^20 cm^-3) electron-hole plasma within such nanoparticle, drastically changing its transient dielectric permittivity. This allows to manipulate by both electric and magnetic nanoparticle responses, resulting in dramatic changes of its scattering diagram and scattering cross section. We experimentally demonstrate 20 % tuning of reflectance of a single silicon nanoparticle by femtosecond laser pulses with wavelength in the vicinity of the magnetic dipole resonance. Such single-particle nanodevice enables to design fast and ultracompact optical switchers and modulators.

  9. Equivalent ambipolar carrier injection of electrons and holes with Au electrodes in air-stable field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kanagasekaran, Thangavel, E-mail: kanagasekaran@gmail.com, E-mail: Shimotani@m.tohoku.ac.jp, E-mail: tanigaki@m.tohoku.ac.jp; Ikeda, Susumu; Kumashiro, Ryotaro [WPI-Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577 (Japan); Shimotani, Hidekazu, E-mail: kanagasekaran@gmail.com, E-mail: Shimotani@m.tohoku.ac.jp, E-mail: tanigaki@m.tohoku.ac.jp; Shang, Hui [Department of Physics, Graduate School of Science, Tohoku University, 6-3 Aoba, Aramaki, Aoba, Sendai 980-8578 (Japan); Tanigaki, Katsumi, E-mail: kanagasekaran@gmail.com, E-mail: Shimotani@m.tohoku.ac.jp, E-mail: tanigaki@m.tohoku.ac.jp [WPI-Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577 (Japan); Department of Physics, Graduate School of Science, Tohoku University, 6-3 Aoba, Aramaki, Aoba, Sendai 980-8578 (Japan)

    2015-07-27

    Carrier injection from Au electrodes to organic thin-film active layers can be greatly improved for both electrons and holes by nano-structural surface control of organic semiconducting thin films using long-chain aliphatic molecules on a SiO{sub 2} gate insulator. In this paper, we demonstrate a stark contrast for a 2,5-bis(4-biphenylyl)bithiophene (BP2T) active semiconducting layer grown on a modified SiO{sub 2} dielectric gate insulator between two different modifications of tetratetracontane and poly(methyl methacrylate) thin films. Important evidence that the field effect transistor (FET) characteristics are independent of electrode metals with different work functions is given by the observation of a conversion of the metal-semiconductor contact from the Schottky limit to the Bardeen limit. An air-stable light emitting FET with an Au electrode is demonstrated.

  10. Real-time observation of ultrafast electron injection at graphene–Zn porphyrin interfaces

    KAUST Repository

    Masih, Dilshad

    2015-02-25

    We report on the ultrafast interfacial electron transfer ( ET) between zinc( II) porphyrin ( ZnTMPyP) and negatively charged graphene carboxylate ( GC) using state- of- the- art femtosecond laser spectroscopy with broadband capabilities. The steady- state interaction between GC and ZnTMPyP results in a red- shifted absorption spectrum, providing a clear indication for the binding affinity between ZnTMPyP and GC via electrostatic and p- p stacking interactions. Ultrafast transient absorption ( TA) spectra in the absence and presence of three different GC concentrations reveal ( i) the ultrafast formation of singlet excited ZnTMPyP*, which partially relaxes into a long- lived triplet state, and ( ii) ET from the singlet excited ZnTMPyP* to GC, forming ZnTMPyP + and GC , as indicated by a spectral feature at 650- 750 nm, which is attributed to a ZnTMPyP radical cation resulting from the ET process.

  11. Theoretical Study of Midwave Infrared HgCdTe nBn Detectors Operating at Elevated Temperatures

    Science.gov (United States)

    Akhavan, Nima Dehdashti; Jolley, Gregory; Umana-Membreno, Gilberto A.; Antoszewski, Jarek; Faraone, Lorenzo

    2015-09-01

    We report a theoretical study of mercury cadmium telluride (HgCdTe) unipolar n-type/barrier/ n-type (nBn) detectors for midwave infrared (MWIR) applications at elevated temperatures. The results obtained indicate that the composition, doping, and thickness of the barrier layer in MWIR HgCdTe nBn detectors can be optimized to yield performance levels comparable with those of ideal HgCdTe p- n photodiodes. It is also shown that introduction of an additional barrier at the back contact layer of the detector structure (nBnn+) leads to substantial suppression of the Auger generation-recombination (GR) mechanism; this results in an order-of-magnitude reduction in the dark current level compared with conventional nBn or p- n junction-based detectors, thus enabling background-limited detector operation above 200 K.

  12. Numerical modeling of HgCdTe solidification: effects of phase diagram double-diffusion convection and microgravity level

    Science.gov (United States)

    Bune, Andris V.; Gillies, Donald C.; Lehoczky, Sandor L.

    1997-07-01

    A numerical model of HgCdTe solidification was implemented using finite the element code FIDAP. Model verification was done using both experimental data and numerical test problems. The model was used to eluate possible effects of double- diffusion convection in molten material, and microgravity level on concentration distribution in the solidified HgCdTe. Particular attention was paid to incorporation of HgCdTe phase diagram. It was found, that below a critical microgravity amplitude, the maximum convective velocity in the melt appears virtually independent on the microgravity vector orientation. Good agreement between predicted interface shape and an interface obtained experimentally by quenching was achieved. The results of numerical modeling are presented in the form of video film.

  13. Evidence for high-energy and low-emittance electron beams using ionization injection of charge in a plasma wakefield accelerator

    CERN Document Server

    Vafaei-Najafabadi, N; Clayton, C E; Joshi, C; Marsh, K A; Mori, W B; Welch, E C; Lu, W; Adli, E; Allen, J; Clarke, C I; Corde, S; Frederico, J; Gessner, S J; Green, S Z; Hogan, M J; Litos, M D; Yakimenko, V

    2015-01-01

    Ionization injection in a plasma wakefield accelerator was investigated experimentally using two lithium plasma sources of different lengths. The ionization of the helium gas, used to confine the lithium, injects electrons in the wake. After acceleration, these injected electrons were observed as a distinct group from the drive beam on the energy spectrometer. They typically have a charge of tens of pC, an energy spread of a few GeV, and a maximum energy of up to 30 GeV. The emittance of this group of electrons can be many times smaller than the initial emittance of the drive beam. The energy scaling for the trapped charge from one plasma length to the other is consistent with the blowout theory of the plasma wakefield.

  14. Electron mobility and injection dynamics in mesoporous ZnO, SnO₂, and TiO₂ films used in dye-sensitized solar cells.

    Science.gov (United States)

    Tiwana, Priti; Docampo, Pablo; Johnston, Michael B; Snaith, Henry J; Herz, Laura M

    2011-06-28

    High-performance dye-sensitized solar cells are usually fabricated using nanostructured TiO(2) as a thin-film electron-collecting material. However, alternative metal-oxides are currently being explored that may offer advantages through ease of processing, higher electron mobility, or interface band energetics. We present here a comparative study of electron mobility and injection dynamics in thin films of TiO(2), ZnO, and SnO(2) nanoparticles sensitized with Z907 ruthenium dye. Using time-resolved terahertz photoconductivity measurements, we show that, for ZnO and SnO(2) nanoporous films, electron injection from the sensitizer has substantial slow components lasting over tens to hundreds of picoseconds, while for TiO(2), the process is predominantly concluded within a few picoseconds. These results correlate well with the overall electron injection efficiencies we determine from photovoltaic cells fabricated from identical nanoporous films, suggesting that such slow components limit the overall photocurrent generated by the solar cell. We conclude that these injection dynamics are not substantially influenced by bulk energy level offsets but rather by the local environment of the dye-nanoparticle interface that is governed by dye binding modes and densities of states available for injection, both of which may vary from site to site. In addition, we have extracted the electron mobility in the three nanoporous metal-oxide films at early time after excitation from terahertz conductivity measurements and compared these with the time-averaged, long-range mobility determined for devices based on identical films. Comparison with established values for single-crystal Hall mobilities of the three materials shows that, while electron mobility values for nanoporous TiO(2) films are approaching theoretical maximum values, both early time, short distance and interparticle electron mobility in nanoporous ZnO or SnO(2) films offer considerable scope for improvement.

  15. Localized injection of large-amplitude Pc 1 waves and electron temperature enhancement near the plasmapause observed by DE2 in the upper ionosphere

    Science.gov (United States)

    Iyemori, T.; Sugiura, M.; Oka, A.; Morita, Y.; Ishii, M.; Slavin, J. A.; Brace, L. H.; Hoffman, R. A.; Winningham, J. D.

    1994-01-01

    The relation between electron temperature enhancement and large amplitude Pc 1 wave injections in the upper ionosphere is investigated using the data obtained by the Dynamics Explorer 2 spacecraft. Results can be summarized as follows: (1) The region of the temperature enhancement coincides with that of the wave injection which is latitudinally very narrow (less than 100 km) in comparison with the wavelength along the ambient magnetic field (several hundred kilometers). (2) The duration of the wave injection (or the temperature enhancement) seems to be less than a few hours even under quiet geomagnetic conditions, and/or the injection seems to be very localized, not only latitudinally, but also longitudinally. (3) The appearance and the magnitude of temperature enhancement depend on both the wave amplitude and the satellite altitude. (4) Two of the 22 events that were analyzed show a clear enhancement of low-energy electron flux (5 to 30 eV) at the wave injection, and the flux is field-aligned both downward and upward. The region of the temperature enhancement coincides with that of the downward electron flux. From these results, it is suggested that the temperature enhancement which accompanies large-amplitude waves with Pc 1 pulsation frequencies (0.2 to 5 Hz) is caused by the direct acceleration of thermal electrons at low altitudes by the parallel electric field (0.01 to 0.001 mV/m) of the ion-cyclotron waves (kinetic Alfven waves) having an oblique wave normal.

  16. Low-voltage organic electronics based on a gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructures.

    Science.gov (United States)

    Hlaing, Htay; Kim, Chang-Hyun; Carta, Fabio; Nam, Chang-Yong; Barton, Rob A; Petrone, Nicholas; Hone, James; Kymissis, Ioannis

    2015-01-14

    The vertical integration of graphene with inorganic semiconductors, oxide semiconductors, and newly emerging layered materials has recently been demonstrated as a promising route toward novel electronic and optoelectronic devices. Here, we report organic thin film transistors based on vertical heterojunctions of graphene and organic semiconductors. In these thin heterostructure devices, current modulation is accomplished by tuning of the injection barriers at the semiconductor/graphene interface with the application of a gate voltage. N-channel devices fabricated with a thin layer of C60 show a room temperature on/off ratio >10(4) and current density of up to 44 mAcm(-2). Because of the ultrashort channel intrinsic to the vertical structure, the device is fully operational at a driving voltage of 200 mV. A complementary p-channel device is also investigated, and a logic inverter based on two complementary transistors is demonstrated. The vertical integration of graphene with organic semiconductors via simple, scalable, and low-temperature fabrication processes opens up new opportunities to realize flexible, transparent organic electronic, and optoelectronic devices.

  17. Charging of quantum dots by sulfide redox electrolytes reduces electron injection efficiency in quantum dot sensitized solar cells.

    Science.gov (United States)

    Zhu, Haiming; Song, Nianhui; Lian, Tianquan

    2013-08-07

    In quantum dot (QD) sensitized solar cells (QDSSCs), redox electrolytes act as hole scavengers to regenerate the QD ground state from its oxidized form, thus enabling a continuous device operation. However, unlike molecular sensitizers, QDs also have redox-active trap states within the band gap, which can be charged in the presence of redox electrolyte. The effects of electrolyte induced charging of QDs on the performance of QDSSCs have not been reported. Here, using steady-state and time-resolved absorption and emission spectroscopy, we show that CdSe/CdS3MLZnCdS2MLZnS2ML core/multishell QDs are charged in the presence of sulfide electrolytes due to the reduction of surface states. As a result, exciton lifetimes in these QDs are shortened due to an Auger recombination process. Such charging induced fast Auger recombination can compete effectively with electron transfer from QDs to TiO2 and reduce the electron injection efficiency in QDSSCs. We believe that the reported charging effects are present for most colloidal nanocrystals in the presence of redox media and have important implications for designing QD-based photovoltaic and photocatalytic devices.

  18. Enhanced performance of inverted organic photovoltaic cells using CNTs-TiO(X) nanocomposites as electron injection layer.

    Science.gov (United States)

    Zhang, Hong; Xu, Meifeng; Cui, Rongli; Guo, Xihong; Yang, Shangyuan; Liao, Liangsheng; Jia, Quanjie; Chen, Yu; Dong, Jinquan; Sun, Baoyun

    2013-09-06

    In this study, we fabricated inverted organic photovoltaic cells with the structure ITO/carbon nanotubes (CNTs)-TiO(X)/P3HT:PCBM/MoO₃/Al by spin casting CNTs-TiO(X) nanocomposite (CNTs-TiO(X)) as the electron injection layer onto ITO/glass substrates. The power conversion efficiency (PCE) of the 0.1 wt% single-walled nanotubes (SWNTs)-TiO(X) nanocomposite device was almost doubled compared with the TiO(X) device, but with increasing concentration of the incorporated SWNTs in the TiO(X) film, the performance of the devices appeared to decrease rapidly. Devices with multi-walled NTs in the TiO(X) film have a similar trend. This phenomenon mainly depends on the inherent physical and chemical characteristics of CNTs such as their high surface area, their electron-accepting properties and their excellent carrier mobility. However, with increasing concentration of CNTs, CNTs-TiO(X) current leakage pathways emerged and also a recombination of charges at the interfaces. In addition, there was a significant discovery. The incorporated CNTs were highly conducive to enhancing the degree of crystallinity and the ordered arrangement of the P3HT in the active layers, due to the intermolecular π-π stacking interactions between CNTs and P3HT.

  19. Enhanced performance of inverted organic photovoltaic cells using CNTs-TiOX nanocomposites as electron injection layer

    Science.gov (United States)

    Zhang, Hong; Xu, Meifeng; Cui, Rongli; Guo, Xihong; Yang, Shangyuan; Liao, Liangsheng; Jia, Quanjie; Chen, Yu; Dong, Jinquan; Sun, Baoyun

    2013-09-01

    In this study, we fabricated inverted organic photovoltaic cells with the structure ITO/carbon nanotubes (CNTs)-TiOX/P3HT:PCBM/MoO3/Al by spin casting CNTs-TiOX nanocomposite (CNTs-TiOX) as the electron injection layer onto ITO/glass substrates. The power conversion efficiency (PCE) of the 0.1 wt% single-walled nanotubes (SWNTs)-TiOX nanocomposite device was almost doubled compared with the TiOX device, but with increasing concentration of the incorporated SWNTs in the TiOX film, the performance of the devices appeared to decrease rapidly. Devices with multi-walled NTs in the TiOX film have a similar trend. This phenomenon mainly depends on the inherent physical and chemical characteristics of CNTs such as their high surface area, their electron-accepting properties and their excellent carrier mobility. However, with increasing concentration of CNTs, CNTs-TiOX current leakage pathways emerged and also a recombination of charges at the interfaces. In addition, there was a significant discovery. The incorporated CNTs were highly conducive to enhancing the degree of crystallinity and the ordered arrangement of the P3HT in the active layers, due to the intermolecular π-π stacking interactions between CNTs and P3HT.

  20. Patient assessment of an electronic device for subcutaneous self-injection of interferon ß-1a for multiple sclerosis: an observational study in the UK and Ireland

    Directory of Open Access Journals (Sweden)

    D'Arcy C

    2012-01-01

    Full Text Available Caroline D’Arcy1, Del Thomas2, Dee Stoneman3, Laura Parkes31West London Neuroscience Centre, Charing Cross Hospital, London, UK; 2Wye Valley NHS Trust, Hereford, UK; 3Merck Serono Ltd, Feltham, Middlesex, UKBackground: Injectable disease-modifying drugs (DMDs reduce the number of relapses and delay disability progression in patients with relapsing–remitting multiple sclerosis (RRMS. Regular self-injection can be stressful and impeded by MS symptoms. Auto-injection devices can simplify self-injection, overcome injection-related issues, and increase treatment satisfaction. This study investigated patient responses to an electronic auto-injection device.Methods: Patients with RRMS (n = 63, aged 18–65 years, naïve to subcutaneous (sc interferon (IFN ß-1a therapy, were recruited to a Phase IV, observational, open-label, multicenter study (NCT01195870. Patients self-injected sc IFN ß-1a using the RebiSmart™ (Merck Serono S.A. – Geneva, Switzerland electronic auto-injector for 12 weeks, including an initial titration period if recommended by the prescribing physician. In week 12, patients completed a questionnaire comprising of a visual analog scale (VAS to rate how much they liked using the device, a four-point response question on ease of use (‘very difficult’, ‘difficult’, ‘easy’, or ‘very easy’, and a list of ten device functions to rank, based upon their experiences.Results: Six patients (9.5% discontinued the study: one switched to manual injection; two discontinued all treatment; three changed therapy. In total, 59 out of 63 patients (93.7% completed the VAS; 54 out of 59 (91.5%; 95% confidence interval: 81.3%–97.2% ‘liked’ using the electronic auto-injector (score ≥6, whereas 57 out of 59 (96.6% rated the device overall as ‘easy’ or ‘very easy’ to use. Device features rated as most useful were the hidden needle (mean [standard deviation] score: 3.3 [3.01]; n = 56, confirmation sound (3.9 [2.45], and

  1. Molecular rectification and conductance switching in carbon-based molecular junctions by structural rearrangement accompanying electron injection.

    Science.gov (United States)

    McCreery, Richard; Dieringer, Jon; Solak, Ali Osman; Snyder, Brian; Nowak, Aletha M; McGovern, William R; DuVall, Stacy

    2003-09-01

    Molecular junctions were fabricated consisting of a 3.7 nm thick layer of nitroazobenzene (NAB) molecules between a pyrolyzed photoresist substrate (PPF) and a titanium top contact which was protected from oxidation by a layer of gold. Raman spectroscopy, XPS, and AFM revealed that the NAB layer was 2-3 molecules thick and was bonded to the two conducting contacts by C-C and N-Ti covalent bonds. The current/voltage behavior of the PPF/NAB(3.7)/Ti junctions showed strong and reproducible rectification, with the current at +2 V exceeding that at -2 V by a factor of 600. The observed current density at +3 V was 0.71 A/cm(2), or about 10(5) e(-)/s/molecule. The i/V response was strongly dependent on temperature and scan rate, with the rectification ratio decreasing for lower temperature and faster scans. Junction conductivity increased with time over several seconds at room temperature in response to positive voltage pulses, with the rate of increase larger for more positive potentials. Voltage pulses to positive potentials and back to zero volts revealed that electrons are injected from the Ti to the NAB, to the extent of about 0.1-1 e(-)/molecule for a +3 V pulse. These electrons cause an activated transition of the NAB into a more conductive quinoid state, which in turn causes an increase in conductivity. The transition to the quinoid state involves nuclear rearrangement which occurs on a submillisecond to several second time scale, depending on the voltage applied. The quinoid state is stable as long as the applied electric field is present, but reverts back to NAB within several minutes after the field is relaxed. The results are interpreted in terms of a thermally activated, potential dependent electron transfer into the 3.7 nm NAB layer, which brings about a conductivity increase of several orders of magnitude.

  2. Dynamics of Electron Injection in SnO2/TiO2 Core/Shell Electrodes for Water-Splitting Dye-Sensitized Photoelectrochemical Cells.

    Science.gov (United States)

    McCool, Nicholas S; Swierk, John R; Nemes, Coleen T; Schmuttenmaer, Charles A; Mallouk, Thomas E

    2016-08-01

    Water-splitting dye-sensitized photoelectrochemical cells (WS-DSPECs) rely on photoinduced charge separation at a dye/semiconductor interface to supply electrons and holes for water splitting. To improve the efficiency of charge separation and reduce charge recombination in these devices, it is possible to use core/shell structures in which photoinduced electron transfer occurs stepwise through a series of progressively more positive acceptor states. Here, we use steady-state emission studies and time-resolved terahertz spectroscopy to follow the dynamics of electron injection from a photoexcited ruthenium polypyridyl dye as a function of the TiO2 shell thickness on SnO2 nanoparticles. Electron injection proceeds directly into the SnO2 core when the thickness of the TiO2 shell is less than 5 Å. For thicker shells, electrons are injected into the TiO2 shell and trapped, and are then released into the SnO2 core on a time scale of hundreds of picoseconds. As the TiO2 shell increases in thickness, the probability of electron trapping in nonmobile states within the shell increases. Conduction band electrons in the TiO2 shell and the SnO2 core can be differentiated on the basis of their mobility. These observations help explain the observation of an optimum shell thickness for core/shell water-splitting electrodes.

  3. HgCdTe Fabrication Using Directed Energy Techniques

    Science.gov (United States)

    1981-08-01

    Vekilov, and Kadysherich, Soy . Phys. Solid State 12, 2618 j(1972). 6. N.C. Schoen, J. Appl. Phys. 51, 4747 (1980). 1 7. A.C. Greenwald, R.G. Little...4244 (1975). 29. P. Becla, J. Lagowski, H.C. Gatos , and H. Ruda, J. Electrochem. Soc. 128, 1172 (1981). APPENDIX A CALCULATED ELECTRON BEAM ENERGY

  4. Feedback Direct Injection Current Readout For Infrared Charge-Coupled Devices

    Science.gov (United States)

    Kubo, Kazuya; Wakayama, Hiroyuki; Kajihara, Nobuyuki; Awamoto, Kenji; Miyamoto, Yoshihiro

    1990-01-01

    We are proposing current readout for infrared charge coupled devices (IRCCDs) which can operate at higher temperatures. Feedback direct injection (FDI) consists of a simple amplifier of gain, AFDI was used in a medium-wavelength IRCCD operating at a high temperature. We made a 64-element HgCdTe linear IRCCD using FDI. The device operates at 195 K with an NETD of 0.5 K.

  5. Electron self-injection for the acceleration in laser-pulse-wakes in the presence of a `strong' external magnetic field

    CERN Document Server

    Zhidkov, A; Masuda, S; Oishi, Y; Fujii, T; Kodama, R

    2012-01-01

    An external static magnetic field with its strength B~10T may result in the laser wake wave-breaking upon changing the electron motion in the vicinity of maximal density ramp of a wave period. This, as shown by numerical simulations, can change the resonance character of the electron self-injection in the laser wake-field; a total charge loaded in the acceleration phase of laser pulse wake can be controlled by a proper choice of the magnetic field strength.

  6. A 1.5k x 1.5k class photon counting HgCdTe linear avalanche photo-diode array for low background space astronomy in the 1-5micron infrared

    Science.gov (United States)

    Hall, Donald

    Under a current award, NASA NNX 13AC13G "EXTENDING THE ASTRONOMICAL APPLICATION OF PHOTON COUNTING HgCdTe LINEAR AVALANCHE PHOTODIODE ARRAYS TO LOW BACKGROUND SPACE OBSERVATIONS" UH has used Selex SAPHIRA 320 x 256 MOVPE L-APD HgCdTe arrays developed for Adaptive Optics (AO) wavefront (WF) sensing to investigate the potential of this technology for low background space astronomy applications. After suppressing readout integrated circuit (ROIC) glow, we have placed upper limits on gain normalized dark current of 0.01 e-/sec at up to 8 volts avalanche bias, corresponding to avalanche gain of 5, and have operated with avalanche gains of up to several hundred at higher bias. We have also demonstrated detection of individual photon events. The proposed investigation would scale the format to 1536 x 1536 at 12um (the largest achievable in a standard reticule without requiring stitching) while incorporating reference pixels required at these low dark current levels. The primary objective is to develop, produce and characterize a 1.5k x 1.5k at 12um pitch MOVPE HgCdTe L-APD array, with nearly 30 times the pixel count of the 320 x 256 SAPHIRA, optimized for low background space astronomy. This will involve: 1) Selex design of a 1.5k x 1.5k at 12um pitch ROIC optimized for low background operation, silicon wafer fabrication at the German XFab foundry in 0.35 um 3V3 process and dicing/test at Selex, 2) provision by GL Scientific of a 3-side close-buttable carrier building from the heritage of the HAWAII xRG family, 3) Selex development and fabrication of 1.5k x 1.5k at 12 um pitch MOVPE HgCdTe L-APD detector arrays optimized for low background applications, 4) hybridization, packaging into a sensor chip assembly (SCA) with initial characterization by Selex and, 5) comprehensive characterization of low background performance, both in the laboratory and at ground based telescopes, by UH. The ultimate goal is to produce and eventually market a large format array, the L

  7. A monomeric methyl and hydroxypropyl methacrylate injection medium and its utility in casting blood capillaries and liver bile canaliculi for scanning electron microscopy.

    Science.gov (United States)

    Murakami, T; Itoshima, T; Hitomi, K; Ohtsuka, A; Jones, A L

    1984-06-01

    A mixture of 50-60% monomeric methyl methacrylate and 40-50% monomeric 2-hydroxypropyl methacrylate was supplemented with 1.5% benzoyl peroxide (catalyst) and 1.5% N,N-dimethylaniline (accelerator) and injected into glutaraldehyde-perfusion fixed rat hypophyseal and other endocrine organ blood vessels and biliary tracts. This injection medium rapidly polymerized at room temperature and did not require partial polymerization prior to injection. Good casts of blood vessels, including the hypophyseal capillaries, were obtained for scanning electron microscopy. The monomeric methacrylate medium possesses a great advantage over previous ones, as its fluidity enables the casting of very fine vessels such as bile canaliculi. In the case of non-fixed tissues, the monomeric methacrylate medium should be injected carefully, as it is toxic and destructive to the vessels.

  8. Effect of surface fields on the dynamic resistance of planar HgCdTe mid-wavelength infrared photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    He, Kai; Wang, Xi; Zhang, Peng; Chen, Yi-Yu [Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Zhou, Song-Min; Xie, Xiao-Hui; Lin, Chun, E-mail: chun-lin@mail.sitp.ac.cn; Ye, Zhen-Hua; Wang, Jian-Xin; Zhang, Qin-Yao, E-mail: qinyao@mail.sitp.ac.cn [Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); Li, Yang [Graduate School of Information Science and Technology, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2015-05-28

    This work investigates the effect of surface fields on the dynamic resistance of a planar HgCdTe mid-wavelength infrared photodiode from both theoretical and experimental aspects, considering a gated n-on-p diode with the surface potential of its p-region modulated. Theoretical models of the surface leakage current are developed, where the surface tunnelling current in the case of accumulation is expressed by modifying the formulation of bulk tunnelling currents, and the surface channel current for strong inversion is simulated with a transmission line method. Experimental data from the fabricated devices show a flat-band voltage of V{sub FB}=−5.7 V by capacitance-voltage measurement, and then the physical parameters for bulk properties are determined from the resistance-voltage characteristics of the diode working at a flat-band gate voltage. With proper values of the modeling parameters such as surface trap density and channel electron mobility, the theoretical R{sub 0}A product and corresponding dark current calculated from the proposed model as functions of the gate voltage V{sub g} demonstrate good consistency with the measured values. The R{sub 0}A product remarkably degenerates when V{sub g} is far below or above V{sub FB} because of the surface tunnelling current or channel current, respectively; and it attains the maximum value of 5.7×10{sup 7} Ω · cm{sup 2} around the transition between surface depletion and weak inversion when V{sub g}≈−4 V, which might result from reduced generation-recombination current.

  9. Thermal cycling reliability of indirect hybrid HgCdTe infrared detectors

    Science.gov (United States)

    Chen, Xing; He, Kai; Wang, Jian-xin; Zhang, Qin-yao

    2013-09-01

    Thermal cycling reliability is one of the most important issues whether the HgCdTe infrared focal plane array detectors can be applied to both military and civil fields. In this paper, a 3D finite element model for indirect hybrid HgCdTe infrared detectors is established. The thermal stress distribution and thermally induced warpage of the detector assembly as a function of the distance between the detector chip and Si-ROIC, the thickness and the materials properties of electrical lead board in cryogenic temperature are analyzed. The results show that all these parameters have influences on the thermal stress distribution and warpage of the detector assembly, especially the coefficient of thermal expansion(CTE) of electrical lead board. The thermal stress and warpage in the assembly can be avoided or minimized by choosing the appropriate electrical lead board. Additionally, the warpage of some indirect hybrid detectors assembly samples is measured in experiment. The experimental results are in good agreement with the simulation results, which verifies that the results are calculated by finite element method are reasonable.

  10. Developments in MOVPE HgCdTe arrays for passive and active infrared imaging

    Science.gov (United States)

    Baker, Ian; Maxey, Chris; Hipwood, Les; Weller, Harald; Thorne, Peter

    2012-09-01

    SELEX Galileo Infrared Ltd has developed a range of 3rd Generation infrared detectors based on HgCdTe grown by Metal Organic Vapour Phase Epitaxy (MOVPE) on low cost GaAs substrates. There have been four key development aims: reducing the cost especially for large arrays, extending the wavelength range, improving the operating temperature for lower power, size and weight cameras and increasing the functionality. Despite a 14% lattice mismatch between GaAs and HgCdTe MOVPE arrays show few symptoms of misfit dislocations even in longwave detectors. The key factors in the growth and device technology are described in this paper to explain at a scientific level the radiometric quality of MOVPE arrays. A feature of the past few years has been the increasingly sophisticated products that are emerging thanks to custom designed silicon readout devices. Three devices are described as examples: a multifunctional device that can operate as an active or passive imager with built-in range finder, a 3-side buttable megapixel array and an ultra-low noise device designed for scientific applications.

  11. RF magnetron sputtering deposition of CdTe passivation on HgCdTe

    Science.gov (United States)

    Rutkowski, Jaroslaw; Adamiec, Krzysztof; Rogalski, Antoni

    1998-04-01

    In this study, we report the RF magnetron sputtering growth and characterization of CdTe passivant on bulk n-type HgCdTe. Our investigations include the HgCdTe surface preparation and in-situ pretreatment, deposition-induced surface damage, interface charge, CdTe film stoichiometry, and thermal stability. The metal-insulator-semiconductor test structures are processed and their electrical properties are measured by capacitance-voltage characteristics. The heterostructures are also characterized by reflectance measurement. In order to investigate the passivation properties of CdTe/HgCdTe heterostructures, we have modeled the band diagram of abrupt CdTe/HgCdTe heterojunction. The effect of sputtering growth condition parameters is also reported. The sputtering CdTe layers, exhibit excellent dielectric, insulating and mechano- chemical properties, as well as interface properties. The interfaces are characterized by slight accumulation and a small hysteresis. A carefully controlled growth process and surface pretreatment tailored to the specific material are required in order to obtain near flat band conditions on n- type materials. Additional informations on surface limitations are obtained from analyzing the I-V characteristics of photodiodes with metal gates covering the p-n junction surface location.

  12. Diffusion Mechanism for Arsenic in Intrinsic and Extrinsic Conditions in HgCdTe

    Science.gov (United States)

    Grenouilloux, T.; Ferron, A.; Péré-Laperne, N.; Mathiot, D.

    2017-09-01

    Due to its low diffusivity and high activation rate, arsenic has become the dopant of choice in p/n HgCdTe high operating temperature technology. Its diffusion mechanism, however, remains imprecise. In this work, arsenic diffusion was studied in molecular beam epitaxy HgCdTe structures consisting of alternatively As-doped and intrinsic layers grown on a CdZnTe substrate. The diffusion coefficient of As was extracted from secondary ion mass spectroscopy concentration profiles. Annealings were performed for different temperatures, mercury partial pressures ( P Hg), annealing times and cadmium atomic fractions. Fermi-level effect on diffusion was observed, indicating extrinsic conditions for diffusion at high As concentration. Based on the variation of As diffusivity with P Hg and As concentration, we propose that As diffusion occurs on both II and VI sublattices. Our results are consistent with the fact that AsVI diffusion is assisted by the Te interstitial, introducing donor levels in the bandgap, while AsII diffusion is assisted by the cation vacancy.

  13. High-Performance MWIR HgCdTe on Si Substrate Focal Plane Array Development

    Science.gov (United States)

    Bommena, R.; Ketharanathan, S.; Wijewarnasuriya, P. S.; Dhar, N. K.; Kodama, R.; Zhao, J.; Buurma, C.; Bergeson, J. D.; Aqariden, F.; Velicu, S.

    2015-09-01

    The development of low noise-equivalent differential temperature (NEDT), high-operability midwave infrared (MWIR) focal plane arrays (FPAs) fabricated from molecular beam epitaxial (MBE)-grown HgCdTe on Si-based substrates is reported. High-quality n-type MWIR HgCdTe layers with a cutoff wavelength of 4.90 μm at 77 K and a carrier concentration of 1-2 × 1015 cm-3 were grown on CdTe/Si substrates by MBE. Highly uniform composition and thickness over 3-inch areas were demonstrated, and low surface defect densities (voids ~5 × 102 cm-2, micro-defects ~5 × 103 cm-2) and etch pit density (~3.5 × 106 cm-2) were measured. This material was used to fabricate 320 × 256, 30 μm pitch FPAs with planar device architecture; arsenic implantation was used to achieve p-type doping. Radiometric and noise characterization was also performed. A low NEDT of 13.8 m K at 85 K for a 1 ms integration time with f/#2 optics was measured. The NEDT operability was 99% at 120 K with a mean dark current noise of 8.14 × 10-13 A/pixel. High-quality thermal images were obtained from the FPA up to a temperature of 150 K.

  14. Diagnostics of a charge breeder electron cyclotron resonance ion source helium plasma with the injection of ^{23}Na^{1+} ions

    Directory of Open Access Journals (Sweden)

    O. Tarvainen

    2016-05-01

    Full Text Available This work describes the utilization of an injected ^{23}Na^{1+} ion beam as a diagnostics of the helium plasma of a charge breeder electron cyclotron resonance ion source. The obtained data allows estimating the upper limit for the ion-ion collision mean-free path of the incident sodium ions, the lower limit of ion-ion collision frequencies for all charge states of the sodium ions and the lower limit of the helium plasma density. The ion-ion collision frequencies of high charge state ions are shown to be at least on the order of 1–10 MHz and the plasma density is estimated to be on the order of 10^{11}  cm^{-3} or higher. The experimental results are compared to simulations of the ^{23}Na^{1+} capture into the helium plasma. The results indicate that the lower breeding efficiency of light ions in comparison to heavier elements is probably due to different capture efficiencies in which the in-flight ionization of the incident 1+ ions plays a vital role.

  15. Real-Time Monitoring and Control of HgCdTe MBE Using an Integrated Multi-Sensor System

    Science.gov (United States)

    1998-08-01

    layer composition, and effusion cell flux during MBE growth of HgCdTe epilayers for advanced IR detectors. Substrate temperature is measured and...HgCdTe MBE growth of high performance IR detector structures over a wide range of compositions, layer thickness and substrate temperature.

  16. Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology

    Science.gov (United States)

    Kopytko, M.; Jóźwikowski, K.; Martyniuk, P.; Gawron, W.; Madejczyk, P.; Kowalewski, A.; Markowska, O.; Rogalski, A.; Rutkowski, J.

    2016-09-01

    In this paper we present the status of HgCdTe barrier detectors with an emphasis on technological progress in metalorganic chemical vapor deposition (MOCVD) growth achieved recently at the Institute of Applied Physics, Military University of Technology. It is shown that MOCVD technology is an excellent tool for HgCdTe barrier architecture growth with a wide range of composition, donor /acceptor doping, and without post-grown annealing. The device concept of a specific barrier bandgap architecture integrated with Auger-suppression is as a good solution for high-operating temperature infrared detectors. Analyzed devices show a high performance comparable with the state-of-the-art of HgCdTe photodiodes. Dark current densities are close to the values given by "Rule 07" and detectivities of non-immersed detectors are close to the value marked for HgCdTe photodiodes. Experimental data of long-wavelength infrared detector structures were confirmed by numerical simulations obtained by a commercially available software APSYS platform. A detailed analysis applied to explain dark current plots was made, taking into account Shockley-Read-Hall, Auger, and tunneling currents.

  17. The importance of energetic particle injections and cross-energy and -species interactions to the acceleration and loss of relativistic electrons in Earth's outer radiation belt (invited talk)

    Science.gov (United States)

    Turner, Drew; Gkioulidou, Matina; Ukhorskiy, Aleksandr; Gabrielse, Christine; Runov, Andrei; Angelopoulos, Vassilis

    2014-05-01

    Earth's radiation belts provide a natural laboratory to study a variety of physical mechanisms important for understanding the nature of energetic particles throughout the Universe. The outer electron belt is a particularly variable population, with drastic changes in relativistic electron intensities occurring on a variety of timescales ranging from seconds to decades. Outer belt variability ultimately results from the complex interplay between different source, loss, and transport processes, and all of these processes are related to the dynamics of the inner magnetosphere. Currently, an unprecedented number of spacecraft are providing in situ observations of the inner magnetospheric environment, including missions such as NASA's THEMIS and Van Allen Probes and ESA's Cluster and operational monitors such as NOAA's GOES and POES constellations. From a sampling of case studies using multi-point observations, we present examples showcasing the significant importance of two processes to outer belt dynamics: energetic particle injections and wave-particle interactions. Energetic particle injections are transient events that tie the inner magnetosphere to the near-Earth magnetotail; they involve the rapid inward transport of plasmasheet particles into the trapping zone in the inner magnetosphere. We briefly review key concepts and present new evidence from Van Allen Probes, GOES, and THEMIS of how these injections provide: 1. the seed population of electrons that are subsequently accelerated locally to relativistic energies in the outer belt and 2. the source populations of ions and electrons that produce a variety of ULF and VLF waves, which are also important for driving outer belt dynamics via wave-particle interactions. Cases of electron acceleration by chorus waves, losses by plasmaspheric hiss and EMIC waves, and radial transport driven by ULF waves will also be presented. Finally, we discuss the implications of this developing picture of the system, namely how

  18. Efficient injection of spin-polarized electrons from manganese arsenide contacts into aluminum gallium arsenide/gallium arsenide spin LEDs

    Science.gov (United States)

    Schweidenback, Lars

    In this thesis we describe two spectroscopic projects project on semiconductor heterostructures, as well as putting together and testing a micro-photoluminescence/7 tesla magnet system for the study of micron size two-dimensional crystals. Below we discuss the three parts in more detail. i) MnAs-based spin light emitting diodes. We have studied the injection of spin-polarized electrons from a ferromagnetic MnAs contact into an AlGaAs(n)/GaAs(i)/AlGaAs(p) n-i-p light emitting diode. We have recorder the emitted electroluminescence as function of magnetic field applied at right angles to the device plane in the 7-300 K temperature range. It was found that at 7 Kelvin the emitted light is circularly polarized with a polarization that is proportional to the MnAs contact magnetization with a saturation value of 26% for B > 1.25 tesla. The polarization persists up to room temperature with a saturation value of 6%. ii) Optical Aharonov-Bohm effect in InGaAs quantum wells. The excitonic photoluminescence intensity from InGaAs quantum wells as function of magnetic field exhibits two local maxima superimposed on a decreasing background. The maxima are attributed to the optical Aharonov-Bohm effect of electrons orbiting around a hole localized at the center of an Indium rich InGaAs islands detected by cross sectional scanning tunneling microscopy. Analysis of the position of the maxima yields a value of the electron orbit radius. iii) Micro-Photoluminescence. We have put together a micro-photoluminescence /7 tesla system for the study of two dimensional crystals. The samples are placed inside a continuous flow cryostat whose tail is positioned in the bore of the 7 tesla magnet. A microscope objective is used to focus the exciting laser light and collect the emitted photoluminescence. The system was tested by recording the photoluminescence spectra of WS2 and WSe 2 monolayers at T = 77 K.

  19. A layer-by-layer ZnO nanoparticle-PbS quantum dot self-assembly platform for ultrafast interfacial electron injection

    KAUST Repository

    Eita, Mohamed Samir

    2014-08-28

    Absorbent layers of semiconductor quantum dots (QDs) are now used as material platforms for low-cost, high-performance solar cells. The semiconductor metal oxide nanoparticles as an acceptor layer have become an integral part of the next generation solar cell. To achieve sufficient electron transfer and subsequently high conversion efficiency in these solar cells, however, energy-level alignment and interfacial contact between the donor and the acceptor units are needed. Here, the layer-by-layer (LbL) technique is used to assemble ZnO nanoparticles (NPs), providing adequate PbS QD uptake to achieve greater interfacial contact compared with traditional sputtering methods. Electron injection at the PbS QD and ZnO NP interface is investigated using broadband transient absorption spectroscopy with 120 femtosecond temporal resolution. The results indicate that electron injection from photoexcited PbS QDs to ZnO NPs occurs on a time scale of a few hundred femtoseconds. This observation is supported by the interfacial electronic-energy alignment between the donor and acceptor moieties. Finally, due to the combination of large interfacial contact and ultrafast electron injection, this proposed platform of assembled thin films holds promise for a variety of solar cell architectures and other settings that principally rely on interfacial contact, such as photocatalysis. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Development of a multichannel dispersion interferometer for measurements of the plasma density distribution after massive gas injection and during the runaway electron phase in TEXTOR

    Energy Technology Data Exchange (ETDEWEB)

    Lvovskiy, Andrey

    2015-07-14

    The tokamak performance is limited both by technological and physical reasons. The crossing of operational limits often leads to a global loss of plasma confinement called disruption. Strong heat and electromagnetic loads are produced during the disruption. The applicability of massive injection of impurities for mitigation of thermal and electromagnetic stresses has been shown at many machines. The third issue of disruption is the generation of runaway electrons. A runaway electron beam with energy about 10 MeV and carried current up to 70% of initial plasma current could cause a serious damage in case of localized impact to the wall. It is theoretically predicted that significant increase of electron density could suppress the generation of runaway electron via collision mechanism. However, the consistent proof of this statement has never been done. The use of massive noble gas injection for the suppression of runaway electron generation is investigated in the present work. A reliable measurement of the electron density during disruption characterized by fast and significant change of plasma parameters is crucially important for that purpose. To solve this issue a multi-channel dispersion-interferometer has been developed on TEXTOR. This is a unique diagnostics allowing reliable measurement of line plasma density during disruption and post-disruption stage with high time resolution. The generation of runaway electrons has been investigated in deliberately induced disruption. The successful suppression of runaway electron generation has been found in the case of sufficient gas amount injection with proper timing not later than beginning of current quench. The critical density threshold has been found to be up to one order of magnitude below the theoretically predicted. The possible reasons are discussed in detail. The minimum of critical density threshold dependence on Z impurity number has been found. The different amount of electrons delivered into the plasma

  1. Active Pixel HgCdTe Detectors With Built-in Dark Current Reduction for Near-Room Temperature Operation Project

    Data.gov (United States)

    National Aeronautics and Space Administration — High sensitivity HgCdTe infrared arrays operating at 77K can now be tailored in a wide range of wavelengths from 1 to 14 microns. However, due to the cooling...

  2. Active Pixel HgCdTe Detectors With Built-in Dark Current Reduction for Near-Room Temperature Operation Project

    Data.gov (United States)

    National Aeronautics and Space Administration — High sensitivity HgCdTe infrared arrays operating at 77K can now be tailored in a wide range of wavelengths from 1 to14 um. However, the cooling requirements make...

  3. PIC code modeling of spacecraft charging potential during electron beam injection into a background of neutral gas and plasma, part 1

    Science.gov (United States)

    Koga, J. K.; Lin, C. S.; Winglee, R. M.

    1989-01-01

    Injections of nonrelativistic electron beams from an isolated equipotential conductor into a uniform background of plasma and neutral gas were simulated using a 2-D electrostatic particle code. The ionization effects on spacecraft charging are examined by including interactions of electrons with neutral gas. The simulations show that the conductor charging potential decreases with increasing neutral background density due to the production of secondary electrons near the conductor surface. In the spacecraft wake, the background electrons accelerated towards the charged spacecraft produce an enhancement of secondary electrons and ions. Simulations run for longer times indicate that the spacecraft potential is further reduced and short wavelength beam-plasma oscillations appear. The results are applied to explain the spacecraft charging potential measured during the SEPAC experiments from Spacelab 1.

  4. Influencing Mechanism of Opening Pressure on Fuel Injection Quantity of Electronic Unit Pump Injection System%启喷压力对电控单体泵供油系统喷油量的影响机理

    Institute of Scientific and Technical Information of China (English)

    严明; 杨青; 王沛; 刘福水

    2015-01-01

    以电控单体泵燃油系统为研究对象,研究了启喷压力对循环喷油量的影响。通过计算各工况下循环喷油量随启喷压力变化的百分比,研究了各工况循环喷油量随启喷压力变化的敏感程度,在此基础上进行了启喷压力对循环喷油量影响的机理分析。结果表明:循环喷油量随启喷压力的增加呈减小趋势,随着转速的增加,启喷压力对循环喷油量的影响程度越来越小;在各确定转速下,随着喷油脉宽的增加,循环喷油量对启喷压力变化的敏感程度越来越低;低速时启喷压力主要通过影响喷油器针阀开启关闭的运动过程而影响循环喷油量,中高速时启喷压力主要通过影响有效喷油脉宽而影响循环喷油量。%For the electronic unit pump (EUP) fuel system ,the influence of opening pressure on fuel injection quantity per cy‐cle was researched .The sensitivity of fuel injection quantity to opening pressure was revealed by calculating the changed per‐centage of fuel injection quantity per cycle to opening pressure and the influencing mechanism of opening pressure on fuel injec‐tion quantity per cycle was researched .The results show that the fuel injection quantity decreases with the increase of opening pressure and is less influenced by the opening pressure with the increase of speed .At each certain speed ,the sensitivity of fuel injection quantity per cycle to opening pressure becomes weaker with the increase of injection pulse width .The fuel injection quantity per cycle is influenced by the opening and closing movement of injector needle valve at low speed and is influenced by the change of effective injection pulse width at medium and high speed .

  5. Development of megapixel HgCdTe detector arrays with 15 micron cutoff

    Science.gov (United States)

    Forrest, William J.; McMurtry, Craig W.; Dorn, Meghan; Pipher, Judith; Cabrera, Mario S.

    2016-10-01

    I. HistoryHgCdTe is a versatile II-VI semiconductor with a direct-bandgap tunable via the Hg:Cd ratio. Hg:Cd ratio = 53:47 (2.5 micron cutoff) was used on the NICMOS instrument on HST and the 2MASS. Increasing Hg:Cd ratio to 70:30 leads to a 5.4 micron cutoff, utilized in NEOWISE and many JWST instruments. Bailey, Wu et al. (1998) motivated extending this technology to 10 microns and beyond. Bacon, McMurtry et al. (2003, 2004) indicated significant progress toward this longwave (LW) goal.Warm-Spitzer has pioneered passive cooling to below 30 K in space, enabling the JWST mission.II. CurrentNASA's proposed NEOcam mission selected HgCdTe with a 10.6 micron cutoff because it promises natural Zodiacal background limited sensitivity with modest cooling (40 K). Teledyne Imaging Systems (TIS) is producing megapixel arrays with excellent performance (McMurtry, Lee, Dorn et al. (2013)) for this mission.III. FutureModest cooling requirements (circa 30 K) coupled with megapixel arrays and LW sensitivity in the thermal IR make HgCdTe attractive for many infrared instruments. For instance, the spectral signature of a terrestrial planet orbiting in the habitable zone of a nearby star will be the deep and wide absorption by CO_2 centered at 15 microns (Seager and Deming, 2010). LW instruments can enhance Solar System missions, such as exploration of the Enceladus geysers (Spencer, Buratti et al. 2006). Passive cooling will be adequate for these missions. Modern ground-based observatories will benefit from infrared capability out to the N band (7.5-13.6 microns). The required detector temperatures (30-40 K) are easily achievable using commercially available mechanical cryo-coolers (refrigerators).IV. Progress to dateTIS is developing megapixel HgCdTe arrays sensitive out to 15 microns under the direction of the University of Rochester. As a first step, we have produced arrays with a 13 micron cutoff. The initial measurements indicate very promising performance. We will present the

  6. Using Quasi-3D OSIRIS simulations of LWFA to study generating high brightness electron beams using ionization and density downramp injection

    Science.gov (United States)

    Dalichaouch, Thamine; Davidson, Asher; Xu, Xinlu; Yu, Peicheng; Tsung, Frank; Mori, Warren; Li, Fei; Zhang, Chaojie; Lu, Wei; Vieira, Jorge; Fonseca, Ricardo

    2016-10-01

    In the past few decades, there has been much progress in theory, simulation, and experiment towards using Laser wakefield acceleration (LWFA) as the basis for designing and building compact x-ray free-electron-lasers (XFEL) as well as a next generation linear collider. Recently, ionization injection and density downramp injection have been proposed and demonstrated as a controllable injection scheme for creating higher quality and ultra-bright relativistic electron beams using LWFA. However, full-3D simulations of plasma-based accelerators are computationally intensive, sometimes taking 100 millions of core-hours on today's computers. A more efficient quasi-3D algorithm was developed and implemented into OSIRIS using a particle-in-cell description with a charge conserving current deposition scheme in r - z and a gridless Fourier expansion in ϕ. Due to the azimuthal symmetry in LWFA, quasi-3D simulations are computationally more efficient than 3D cartesian simulations since only the first few harmonics in are needed ϕ to capture the 3D physics of LWFA. Using the quasi-3D approach, we present preliminary results of ionization and down ramp triggered injection and compare the results against 3D LWFA simulations. This work was supported by DOE and NSF.

  7. (55)Fe X-ray Response of HgCdTe NIR Detector Arrays

    Science.gov (United States)

    Fox, Ori; Rauscher, Bernard J.

    2008-01-01

    Conversion gain is a fundamental parameter in detector characteristics that is used to measure many identifying detector properties, including read noise, dark current, and quantum efficiency (QE). Charge coupling effects, such as inter-pixel capacitance, attenuate photon shot noise and result in an overestimation of of conversion gain when implementing the photon transfer technique. The (55)Fe X-ray technique is a direct and simple method by which to measure the conversion gain by comparing the observed instrumental counts (ADU) to the known charge (e-) liberated by a single X-ray photon. Here we present the calibrated pair production energy for 1.7 micron HgCdTe infrared detectors.

  8. HgCdTe Avalanche Photodiode Detectors for Airborne and Spaceborne Lidar at Infrared Wavelengths

    Science.gov (United States)

    Sun, Xiaoli; Abshire, James B.; Beck, Jeffrey D.; Mitra, Pradip; Reiff, Kirk; Yang, Guangning

    2017-01-01

    We report results from characterizing the HgCdTe avalanche photodiode (APD) sensorchip assemblies (SCA) developed for lidar at infrared wavelength using the high density vertically integrated photodiodes (HDVIP) technique. These devices demonstrated high quantum efficiency, typically greater than 90 between 0.8 micrometers and the cut-off wavelength, greater than 600 APD gain, near unity excess noise factor, 6-10 MHz electrical bandwidth and less than 0.5 fW/Hz(exp.1/2) noise equivalent power (NEP). The detectors provide linear analog output with a dynamic range of 2-3 orders of magnitude at a fixed APD gain without averaging, and over 5 orders of magnitude by adjusting the APD and preamplifier gain settings. They have been successfully used in airborne CO2 and CH4 integrated path differential absorption (IPDA) lidar as a precursor for space lidar applications.

  9. Enhancing carrier injection in the active region of a 280nm emission wavelength LED using graded hole and electron blocking layers

    KAUST Repository

    Janjua, Bilal

    2014-02-27

    A theoretical investigation of AlGaN UV-LED with band engineering of hole and electron blocking layers (HBL and EBL, respectively) was conducted with an aim to improve injection efficiency and reduce efficiency droop in the UV LEDs. The analysis is based on energy band diagrams, carrier distribution and recombination rates (Shockley-Reed-Hall, Auger, and radiative recombination rates) in the quantum well, under equilibrium and forward bias conditions. Electron blocking layer is based on AlaGa1-aN / Al b → cGa1-b → 1-cN / AldGa 1-dN, where a < d < b < c. A graded layer sandwiched between large bandgap AlGaN materials was found to be effective in simultaneously blocking electrons and providing polarization field enhanced carrier injection. The graded interlayer reduces polarization induced band bending and mitigates the related drawback of impediment of holes injection. Similarly on the n-side, the Alx → yGa1-x → 1-yN / AlzGa 1-zN (x < z < y) barrier acts as a hole blocking layer. The reduced carrier leakage and enhanced carrier density in the active region results in significant improvement in radiative recombination rate compared to a structure with the conventional rectangular EBL layers. The improvement in device performance comes from meticulously designing the hole and electron blocking layers to increase carrier injection efficiency. The quantum well based UV-LED was designed to emit at 280nm, which is an effective wavelength for water disinfection application.

  10. Dislocation blocking by AlGaN hot electron injecting layer in the epitaxial growth of GaN terahertz Gunn diode

    Science.gov (United States)

    Li, Liang; Yang, Lin'an; Zhang, Jincheng; Hao, Yue

    2013-09-01

    This paper reports an efficient method to improve the crystal quality of GaN Gunn diode with AlGaN hot electron injecting layer (HEI). An evident reduction of screw dislocation and edge dislocation densities is achieved by the strain management and the enhanced lateral growth in high temperature grown AlGaN HEI layer. Compared with the top hot electron injecting layer (THEI) structure, the bottom hot electron injecting layer (BHEI) structure enhances the crystal quality of transit region due to the growth sequence modulation of HEI layer. A high Hall mobility of 2934 cm2/Vs at 77 K, a nearly flat downtrend of Hall mobility at the temperature ranging from 300 to 573 K, a low intensity of ratio of yellow luminescence band to band edge emission, a narrow band edge emission line-width, and a smooth surface morphology are observed for the BHEI structural epitaxy of Gunn diode, which indicates that AlGaN BHEI structure is a promising candidate for fabrication of GaN Gunn diodes in terahertz regime.

  11. Enhanced carrier injection in InGaN/GaN multiple quantum wells LED with polarization-induced electron blocking barrier

    Science.gov (United States)

    Li, Chengguo; Liu, Hongfei; Chua, Soo Jin

    2016-03-01

    In this report, we designed a light emitting diode (LED) structure in which an N-polar p-GaN layer is grown on top of Ga-polar In0.1Ga0.9N/GaN quantum wells (QWs) on an n-GaN layer. Numerical simulation reveals that the large polarization field at the polarity inversion interface induces a potential barrier in the conduction band, which can block electron overflow out of the QWs. Compared with a conventional LED structure with an Al0.2Ga0.8N electron blocking layer (EBL), the proposed LED structure shows much lower electron current leakage, higher hole injection, and a significant improvement in the internal quantum efficiency (IQE). These results suggest that the polarization induced barrier (PIB) is more effective than the AlGaN EBL in suppressing electron overflow and improving hole transport in GaN-based LEDs.

  12. Advances on Sensitive Electron-injection based Cameras for Low-Flux, Short-Wave-Infrared Applications

    Directory of Open Access Journals (Sweden)

    Vala Fathipour

    2016-08-01

    Full Text Available Short-wave infrared (SWIR photon detection has become an essential technology in the modern world. Sensitive SWIR detector arrays with high pixel density, low noise levels and high signal-to-noise-ratios are highly desirable for a variety of applications including biophotonics, light detection and ranging, optical tomography, and astronomical imaging. As such many efforts in infrared detector research are directed towards improving the performance of the photon detectors operating in this wavelength range.We review the history, principle of operation, present status and possible future developments of a sensitive SWIR detector technology, which has demonstrated to be one of the most promising paths to high pixel density focal plane arrays for low flux applications. The so-called electron-injection (EI detector was demonstrated for the first time (in 2007. It offers an overall system-level sensitivity enhancement compared to the p-i-n diode due to a stable internal avalanche-free gain. The amplification method is inherently low noise, and devices exhibit an excess noise of unity. The detector operates in linear-mode and requires only bias voltage of a few volts. The stable detector characteristics, makes formation of high yield large-format, and high pixel density focal plane arrays less challenging compared to other detector technologies such as avalanche photodetectors. Detector is based on the mature InP material system (InP/InAlAs/GaAsSb/InGaAs, and has a cutoff wavelength of 1700 nm. It takes advantage of a unique three-dimensional geometry and combines the efficiency of a large absorbing volume with the sensitivity of a low-dimensional switch (injector to sense and amplify signals. Current devices provide high-speed response ~ 5 ns rise time, and low jitter ~ 12 ps at room temperature. The internal dark current density is ~ 1 μA/cm2 at room temperature decreasing to 0.1 nA/cm2 at 160 K.EI detectors have been designed, fabricated, and

  13. Advances on Sensitive Electron-injection based Cameras for Low-Flux, Short-Wave-Infrared Applications

    Science.gov (United States)

    Fathipour, Vala; Bonakdar, Alireza; Mohseni, Hooman

    2016-08-01

    Short-wave infrared (SWIR) photon detection has become an essential technology in the modern world. Sensitive SWIR detector arrays with high pixel density, low noise levels and high signal-to-noise-ratios are highly desirable for a variety of applications including biophotonics, light detection and ranging, optical tomography, and astronomical imaging. As such many efforts in infrared detector research are directed towards improving the performance of the photon detectors operating in this wavelength range. We review the history, principle of operation, present status and possible future developments of a sensitive SWIR detector technology, which has demonstrated to be one of the most promising paths to high pixel density focal plane arrays for low flux applications. The so-called electron-injection (EI) detector was demonstrated for the first time (in 2007). It offers an overall system-level sensitivity enhancement compared to the p-i-n diode due to a stable internal avalanche-free gain. The amplification method is inherently low noise, and devices exhibit an excess noise of unity. The detector operates in linear-mode and requires only bias voltage of a few volts. The stable detector characteristics, makes formation of high yield large-format, and high pixel density focal plane arrays less challenging compared to other detector technologies such as avalanche photodetectors. Detector is based on the mature InP material system (InP/InAlAs/GaAsSb/InGaAs), and has a cutoff wavelength of 1700 nm. It takes advantage of a unique three-dimensional geometry and combines the efficiency of a large absorbing volume with the sensitivity of a low-dimensional switch (injector) to sense and amplify signals. Current devices provide high-speed response ~ 5 ns rise time, and low jitter ~ 12 ps at room temperature. The internal dark current density is ~ 1 μA/cm2 at room temperature decreasing to 0.1 nA/cm2 at 160 K. EI detectors have been designed, fabricated, and tested during two

  14. Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy

    Science.gov (United States)

    Świątek, Z.; Ozga, P.; Izhnin, I. I.; Fitsych, E. I.; Voitsekhovskii, A. V.; Korotaev, A. G.; Mynbaev, K. D.; Varavin, V. S.; Dvoretsky, S. A.; Mikhailov, N. N.; Yakushev, M. V.; Bonchyk, A. Yu.; Savytsky, H. V.

    2016-07-01

    Electrical and optical studies of defect structure of HgCdTe films grown by molecular beam epitaxy (MBE) are performed. It is shown that the peculiarity of these films is the presence of neutral defects formed at the growth stage and inherent to the material grown by MBE. It is assumed that these neutral defects are the Te nanocomplexes. Under ion milling, they are activated by mercury interstitials and form the donor centers with the concentration of 1017 cm-3, which makes it possible to detect such defects by measurements of electrical parameters of the material. Under doping of HgCdTe with arsenic using high temperature cracking, the As2 dimers are present in the arsenic flow and block the neutral Te nanocomplexes to form donor As2Te3 complexes. The results of electrical studies are compared with the results of studies carried out by micro-Raman spectroscopy.

  15. Mechanism of hole injection enhancement in light-emitting diodes by inserting multiple hole-reservoir layers in electron blocking layer

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Yukun; Wang, Shuai; Feng, Lungang; Li, Yufeng; Ding, Wen [Key Laboratory of Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics and Information Technology, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Solid-State Lighting Engineering Research Center, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Yun, Feng, E-mail: fyun2010@mail.xjtu.edu.cn [Key Laboratory of Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics and Information Technology, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Solid-State Lighting Engineering Research Center, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Shaanxi Supernova Lighting Technology Co. Ltd, Xi' an, Shaanxi 710075 (China); Su, Xilin [Shaanxi Supernova Lighting Technology Co. Ltd, Xi' an, Shaanxi 710075 (China); Guo, Maofeng [Solid-State Lighting Engineering Research Center, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Shaanxi Supernova Lighting Technology Co. Ltd, Xi' an, Shaanxi 710075 (China); Zhang, Ye [Solid-State Lighting Engineering Research Center, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China)

    2016-03-14

    In this study, gallium nitride (GaN) based light-emitting diodes (LEDs) with single and multiple hole-reservoir layers (HRLs) inserted in the electron-blocking layer (EBL) have been investigated numerically and experimentally. According to simulation results, a better electron confinement and a higher hole injection level can be achieved by the multiple HRLs inserted in the EBL region. To further reveal the underlying mechanism of hole injection enhancement experimentally, the active regions were intentionally designed to emit photons with three different wavelengths of 440 nm, 460 nm, and 480 nm, respectively. Based on the experimental results of photoluminescence (PL) and time-resolved PL (TRPL) measurements conducted at 298 K, the remarkable enhancement (148%) of PL intensities and significant increase in the decay times of the quantum wells close to p-GaN can be obtained. Therefore, the mechanism is proposed that carriers are able to reserve in the EBL region with multiple HRLs for a much longer time. Meanwhile, carriers could diffuse into the active region by tunnelling and/or thermo-electronic effect and then recombine efficiently, leading to the better carrier reservoir effect and higher hole injection in LEDs. As a result, by inserting multiple HRLs in the EBL region instead of single HRL, the experimental external quantum efficiency is enhanced by 19.8%, while the serious droop ratio is markedly suppressed from 37.0% to 27.6% at the high current injection of 100 A/cm{sup 2}.

  16. Characterization of HgCdTe and HgCdSe Materials for Third Generation Infrared Detectors

    Science.gov (United States)

    2011-12-01

    etched HgCdTe photodiode .................................. 13 1.6 (a) Hybrid IR FPA, (b) cross section of structure, (c) indium bumps on Si...to areas of approximately 30 cm2. At this size, the wafers used for growth are unable to accommodate more than two 1024 × 1024 FPAs.3 For more...clear advantages over the other substrates because of its low cost, large wafer size, and a thermal-expansion coefficient that perfectly matches

  17. Passivation Effect of Atomic Layer Deposition of Al2O3 Film on HgCdTe Infrared Detectors

    Science.gov (United States)

    Zhang, Peng; Ye, Zhen-Hua; Sun, Chang-Hong; Chen, Yi-Yu; Zhang, Tian-Ning; Chen, Xin; Lin, Chun; Ding, Ring-Jun; He, Li

    2016-09-01

    The passivation effect of atomic layer deposition of (ALD) Al2O3 film on a HgCdTe infrared detector was investigated in this work. The passivation effect of Al2O3 film was evaluated by measuring the minority carrier lifetime, capacitance versus voltage ( C- V) characteristics of metal-insulator-semiconductor devices, and resistance versus voltage ( R- V) characteristics of variable-area photodiodes. The minority carrier lifetime, C- V characteristics, and R- V characteristics of HgCdTe devices passivated by ALD Al2O3 film was comparable to those of HgCdTe devices passivated by e-beam evaporation of ZnS/CdTe film. However, the baking stability of devices passivated by Al2O3 film is inferior to that of devices passivated by ZnS/CdTe film. In future work, by optimizing the ALD Al2O3 film growing process and annealing conditions, it may be feasible to achieve both excellent electrical properties and good baking stability.

  18. Proton irradiation results for long-wave HgCdTe infrared detector arrays for Near-Earth Object Camera

    Science.gov (United States)

    Dorn, Meghan L.; Pipher, Judith L.; McMurtry, Craig; Hartman, Spencer; Mainzer, Amy; McKelvey, Mark; McMurray, Robert; Chevara, David; Rosser, Joshua

    2016-07-01

    HgCdTe detector arrays with a cutoff wavelength of ˜10 μm intended for the Near-Earth Object Camera (NEOCam) space mission were subjected to proton-beam irradiation at the University of California Davis Crocker Nuclear Laboratory. Three arrays were tested-one with 800-μm substrate intact, one with 30-μm substrate, and one completely substrate-removed. The CdZnTe substrate, on which the HgCdTe detector is grown, has been shown to produce luminescence in shorter wave HgCdTe arrays that causes an elevated signal in nonhit pixels when subjected to proton irradiation. This testing was conducted to ascertain whether or not full substrate removal is necessary. At the dark level of the dewar, we detect no luminescence in nonhit pixels during proton testing for both the substrate-removed detector array and the array with 30-μm substrate. The detector array with full 800-μm substrate exhibited substantial photocurrent for a flux of 103 protons/cm2 s at a beam energy of 18.1 MeV (˜750 e-/s) and 34.4 MeV (˜65 e-/s). For the integrated space-like ambient proton flux level measured by the Spitzer Space Telescope, the luminescence would be well below the NEOCam dark current requirement of <200 e-/s, but the pattern of luminescence could be problematic, possibly complicating calibration.

  19. Threading and misfit-dislocation motion in molecular-beam epitaxy-grown HgCdTe epilayers

    Science.gov (United States)

    Carmody, M.; Lee, D.; Zandian, M.; Phillips, J.; Arias, J.

    2003-07-01

    Lattice mismatch between the substrate and the absorber layer in single-color HgCdTe infrared (IR) detectors and between band 1 and band 2 in two-color detectors results in the formation of crosshatch lines on the surface and an array of misfit dislocations at the epi-interfaces. Threading dislocations originating in the substrate can also bend into the interface plane and result in misfit dislocations because of the lattice mismatch. The existence of dislocations threading through the junction region of HgCdTe IR-photovoltaic detectors can greatly affect device performance. High-quality CdZnTe substrates and controlled molecular-beam epitaxy (MBE) growth of HgCdTe can result in very low threading-dislocation densities as measured by the etch-pit density (EPD ˜ 104cm-2). However, dislocation gettering to regions of high stress (such as etched holes, voids, and implanted-junction regions) at elevated-processing temperatures can result in a high density of dislocations in the junction region that can greatly reduce detector performance. We have performed experiments to determine if the dislocations that getter to these regions of high stress are misfit dislocations at the substrate/absorber interface that have a threading component extending to the upper surface of the epilayer, or if the dislocations originate at the cap/absorber interface as misfit dislocations. The preceding mechanisms for dislocation motion are discussed in detail, and the possible diode-performance consequences are explored.

  20. Electronic structure of the Co ( 0001 )/Mo S2 interface and its possible use for electrical spin injection in a single Mo S2 layer

    Science.gov (United States)

    Garandel, T.; Arras, R.; Marie, X.; Renucci, P.; Calmels, L.

    2017-02-01

    The ability to perform efficient electrical spin injection from ferromagnetic metals into two-dimensional semiconductor crystals based on transition metal dichalcogenide monolayers is a prerequisite for spintronic and valleytronic devices using these materials. Here, the hexagonal close-packed (hcp) Co (0001 ) /Mo S2 interface electronic structure is investigated by first-principles calculations based on the density functional theory. In the lowest energy configuration of the hybrid system after optimization of the atomic coordinates, we show that interface sulfur atoms are covalently bound to one, two, or three cobalt atoms. A decrease of the Co atom spin magnetic moment is observed at the interface, together with a small magnetization of S atoms. Mo atoms also hold small magnetic moments, which can take positive as well as negative values. The charge transfers due to covalent bonding between S and Co atoms at the interface have been calculated for majority and minority spin electrons, and the connections between these interface charge transfers and the induced magnetic properties of the Mo S2 layer are discussed. Band structure and density of states of the hybrid system are calculated for minority and majority spin electrons, taking into account spin-orbit coupling. We demonstrate that Mo S2 bound to the Co contact becomes metallic due to hybridization between Co d and S p orbitals. For this metallic phase of Mo S2 , a spin polarization at the Fermi level of 16% in absolute value is calculated, which could allow spin injection into the semiconducting Mo S2 monolayer channel. Finally, the symmetry of the majority and minority spin electron wave functions at the Fermi level in the Co-bound metallic phase of Mo S2 and the orientation of the border between the metallic and semiconducting phases of Mo S2 are investigated, and their impact on spin injection into the Mo S2 channel is discussed.

  1. Receiver Performance of CO2 and CH4 Lidar with Low Noise HgCdTe Avalanche Photodiodes

    Science.gov (United States)

    Sun, X.; Abshire, J. B.

    2012-12-01

    NASA Goddard Space Flight Center (GSFC) is currently developing CO2 lidars at 1.57 μm wavelength for the Active Sensing of CO2 Emission over Days, Nights, and Seasons (ASCENDS) mission. One of the major technical challenges is the photodetectors that have to operate in short wave infrared (SWIR) wavelength region and sensitive to received laser pulses of only a few photons. We have been using InGaAs photocathode photomultiplier tubes (PMT) in our airborne simulator of the CO2 lidar that can detect single photon with up to 10% quantum efficiency at photodetector for our CO2 lidars. The new HgCdTe APDs have typically a >50% quantum efficiency, including the effect of fill-factor, from 0.9 to 4.5 μm wavelength. DRS RSTA will integrate a low noise read-out integrated circuit (ROIC) with the HgCdTe APD array into a low noise analog SWIR detector with near single photon sensitivity. The new HgCdTe APD SWIR detector assembly is expected to improve the receiver sensitivity of our CO2 lidar by at least a factor of two and provide a sufficient wide signal dynamic range. The new SWIR detector systems can also be used in the CH4 lidars at 1.65 μm wavelength currently being developed at GSFC. The near infrared PMTs have diminishing quantum efficiency as the wavelength exceeds 1.6 μm. InGaAs APDs have a high quantum efficiency but too high an excess noise factor to achieve near quantum limited performance. The new HgCdTe APDs is expected to give a much superior performance than the PMTs and the InGaAs APDs. In this paper, we will give a brief description of the new HgCdTe APD assembly and present a receiver performance analysis of our CO2 lidar and a CH4 lidar with the new detector system in comparison to the near infrared PMTs and InGaAs APDs.

  2. Generation of High Brightness Electron Beams via Ionization Induced Injection by Transverse Colliding Lasers in a Beam-Driven Plasma Wakefield Accelerator

    CERN Document Server

    Li, F; Xu, X L; Zhang, C J; Yan, L X; Du, Y C; Huang, W H; Cheng, H B; Tang, C X; Lu, W; Joshi, C; Mori, W B; Gu, Y Q

    2013-01-01

    The production of ultra-bright electron bunches using ionization injection triggered by two transversely colliding laser pulses inside a beam-driven plasma wake is examined via three-dimensional (3D) particle-in-cell (PIC) simulations. The relatively low intensity lasers are polarized along the wake axis and overlap with the wake for a very short time. The result is that the residual momentum of the ionized electrons in the transverse plane of the wake is much reduced and the injection is localized along the propagation axis of the wake. This minimizes both the initial 'thermal' emittance and the emittance growth due to transverse phase mixing. 3D PIC simulations show that ultra-short (around 8 fs) high-current (0.4 kA) electron bunches with a normalized emittance of 8.5 and 6 nm in the two planes respectively and a brightness greater than 1.7*10e19 A rad-2 m-2 can be obtained for realistic parameters.

  3. High-Operating Temperature HgCdTe: A Vision for the Near Future

    Science.gov (United States)

    Lee, D.; Carmody, M.; Piquette, E.; Dreiske, P.; Chen, A.; Yulius, A.; Edwall, D.; Bhargava, S.; Zandian, M.; Tennant, W. E.

    2016-09-01

    We review recent advances in the HgCdTe material quality and detector performance achieved at Teledyne using molecular beam epitaxy growth and the double-layer planar hetero-junction (DLPH) detector architecture. By using an un-doped, fully depleted absorber, Teledyne's DLPH architecture can be extended for use in high operating temperatures and other applications. We assess the potential achievable performance for long wavelength infrared (LWIR) hetero-junction p-lightly-doped n or p-intrinsic- n (p-i-n) detectors based on recently reported results for 10.7 μm cutoff 1 K × 1 K focal plane arrays (FPAs) tested at temperatures down to 30 K. Variable temperature dark current measurements show that any Shockley-Read-Hall currents in the depletion region of these devices have lifetimes that are reproducibly greater than 100 ms. Under the assumption of comparable lifetimes at higher temperatures, it is predicted that fully-depleted background radiation-limited performance can be expected for 10- μm cutoff detectors from room temperature to well below liquid nitrogen temperatures, with room-temperature dark current nearly 400 times lower than predicted by Rule 07. The hetero-junction p-i-n diode is shown to have numerous other significant potential advantages including minimal or no passivation requirements for pBn-like processing, low 1/ f noise, compatibility with small pixel pitch while maintaining high modulation transfer function, low crosstalk and good quantum efficiency. By appropriate design of the FPA dewar shielding, analysis shows that dark current can theoretically be further reduced below the thermal equilibrium radiative limit. Modeling shows that background radiation-limited LWIR HgCdTe operating with f/1 optics has the potential to operate within √2 of background-limited performance at 215 K. By reducing the background radiation by 2/3 using novel shielding methods, operation with a single-stage thermo-electric-cooler may be possible. If the

  4. Verification of electrical spin injection into InGaAs two-dimensional electron gas from CoFe electrode by four-terminal non-local geometry

    Science.gov (United States)

    Hidaka, S.; Kondo, T.; Akabori, M.; Yamada, S.

    2013-12-01

    We performed electrical spin injection into In0.75Ga0.25As two-dimensional electron gases from Co0.8Fe0.2 electrodes by four-terminal non-local spin-valve (NLSV) measurement. We observed clear SV signals in NL resistance at 1.5 K. From the electrode spacing dependence of the signals, we estimated spin diffusion length and spin polarization to be ˜5.1 μm and ˜5.7 %, respectively. These are larger than those reported in similar systems.

  5. Verification of electrical spin injection into InGaAs two-dimensional electron gas from CoFe electrode by four-terminal non-local geometry

    Energy Technology Data Exchange (ETDEWEB)

    Hidaka, S.; Kondo, T.; Akabori, M.; Yamada, S. [Center for Nano Materials and Technology (CNMT), Japan Advanced Institute of Science and Technology (JAIST), Asahidai, Nomi, Ishikawa 923-1292 (Japan)

    2013-12-04

    We performed electrical spin injection into In{sub 0.75}Ga{sub 0.25}As two-dimensional electron gases from Co{sub 0.8}Fe{sub 0.2} electrodes by four-terminal non-local spin-valve (NLSV) measurement. We observed clear SV signals in NL resistance at 1.5 K. From the electrode spacing dependence of the signals, we estimated spin diffusion length and spin polarization to be ∼5.1 μm and ∼5.7 %, respectively. These are larger than those reported in similar systems.

  6. Time-domain measurement of terahertz frequency magnetoplasmon resonances in a two-dimensional electron system by the direct injection of picosecond pulsed currents

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Jingbo; Mayorov, Alexander S.; Wood, Christopher D.; Mistry, Divyang; Li, Lianhe; Linfield, Edmund H.; Giles Davies, A.; Cunningham, John E., E-mail: j.e.cunningham@leeds.ac.uk [School of Electronic and Electrical Engineering, University of Leeds, Woodhouse Lane, Leeds LS2 9JT (United Kingdom); Sydoruk, Oleksiy [Optical and Semiconductor Devices Group, Department of Electrical and Electronic Engineering, Imperial College London, South Kensington Campus, London SW7 2AZ (United Kingdom)

    2016-02-29

    We have investigated terahertz (THz) frequency magnetoplasmon resonances in a two-dimensional electron system through the direct injection of picosecond duration current pulses. The evolution of the time-domain signals was measured as a function of magnetic field, and the results were found to be in agreement with calculations using a mode-matching approach for four modes observed in the frequency range above 0.1 THz. This introduces a generic technique suitable for sampling ultrafast carrier dynamics in low-dimensional semiconductor nanostructures at THz frequencies.

  7. Injection of auxiliary electrons for increasing the plasma density in highly charged and high intensity ion sources

    Science.gov (United States)

    Odorici, F.; Malferrari, L.; Montanari, A.; Rizzoli, R.; Mascali, D.; Castro, G.; Celona, L.; Gammino, S.; Neri, L.

    2016-02-01

    Different electron guns based on cold- or hot-cathode technologies have been developed since 2009 at INFN for operating within ECR plasma chambers as sources of auxiliary electrons, with the aim of boosting the source performances by means of a higher plasma lifetime and density. Their application to microwave discharge ion sources, where plasma is not confined, has required an improvement of the gun design, in order to "screen" the cathode from the plasma particles. Experimental tests carried out on a plasma reactor show a boost of the plasma density, ranging from 10% to 90% when the electron guns are used, as explained by plasma diffusion models.

  8. Injection of auxiliary electrons for increasing the plasma density in highly charged and high intensity ion sources

    Energy Technology Data Exchange (ETDEWEB)

    Odorici, F., E-mail: fabrizio.odorici@bo.infn.it; Malferrari, L.; Montanari, A. [INFN—Bologna, Viale B. Pichat, 6/2, 40127 Bologna (Italy); Rizzoli, R. [INFN—Bologna, Viale B. Pichat, 6/2, 40127 Bologna (Italy); CNR–Istituto per la Microelettronica ed i Microsistemi, Via Gobetti 101, 40129 Bologna (Italy); Mascali, D.; Castro, G.; Celona, L.; Gammino, S.; Neri, L. [INFN–Laboratori Nazionali del Sud, Via S. Sofia 62, 95125 Catania (Italy)

    2016-02-15

    Different electron guns based on cold- or hot-cathode technologies have been developed since 2009 at INFN for operating within ECR plasma chambers as sources of auxiliary electrons, with the aim of boosting the source performances by means of a higher plasma lifetime and density. Their application to microwave discharge ion sources, where plasma is not confined, has required an improvement of the gun design, in order to “screen” the cathode from the plasma particles. Experimental tests carried out on a plasma reactor show a boost of the plasma density, ranging from 10% to 90% when the electron guns are used, as explained by plasma diffusion models.

  9. Use of sequential injection analysis to construct an electronic-tongue: application to multidetermination employing the transient response of a potentiometric sensor array.

    Science.gov (United States)

    Calvo, Daniel; Durán, Alejandro; Del Valle, Manel

    2007-09-26

    An electronic tongue based on the transient response of an array of non-specific-response potentiometric sensors was developed. A sequential injection analysis (SIA) system was used in order to automate its training and operation. The use of the transient recording entails the dynamic nature of the sensor's response, which can be of high information content, of primary ions and also of interfering ions; these may better discriminated if the kinetic resolution is added. This work presents the extraction of significant information contained in the transient response of a sensor array formed by five all-solid-state potentiometric sensors. The tool employed was the Fourier transform, from which a number of coefficients were fed into an artificial neural network (ANN) model, used to perform a quantitative multidetermination. The studied case was the analysis of mixtures of calcium, sodium and potassium. Obtained performance is compared with the more traditional automated electronic tongue using final steady-state potentials.

  10. Diphenylamino-substituted bicarbazole derivative: Hole-transporting material with high glass-transition temperature, good electron and triplet exciton blocking capabilities and efficient hole injection

    Science.gov (United States)

    Chen, Shanyong; Jiang, Shan; Yu, Hong

    2017-04-01

    A diphenylamino-substituted bicarbazole derivative (BCZDA) with high glass-transition temperature (170 °C) has been developed. The introduction of the strongly electron-donating diphenylamino group endows this compound with high HOMO (-4.94 eV), LUMO (-1.94 eV) and triplet energy (2.65 eV) levels which are beneficial for hole injection and electron/triplet exciton blocking. By adopting this compound as the hole-transporting layer, both fluorescent and phosphorescent devices with good performance have been realized. Through the device study, the performance of this compound is proved to be comparable to that of NPB. The utility of this compound as a host has also been evaluated.

  11. Enhancing carrier injection in the active region of a 280nm emission wavelength LED using graded hole and electron blocking layers

    Science.gov (United States)

    Janjua, Bilal; Ng, Tien K.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

    2014-02-01

    A theoretical investigation of AlGaN UV-LED with band engineering of hole and electron blocking layers (HBL and EBL, respectively) was conducted with an aim to improve injection efficiency and reduce efficiency droop in the UV LEDs. The analysis is based on energy band diagrams, carrier distribution and recombination rates (Shockley-Reed-Hall, Auger, and radiative recombination rates) in the quantum well, under equilibrium and forward bias conditions. Electron blocking layer is based on AlaGa1-aN / Alb → cGa1-b → 1-cN / AldGa1-dN, where a UV-LED was designed to emit at 280nm, which is an effective wavelength for water disinfection application.

  12. Photocurrents in the ZnO and TiO/sub 2/ photoelectrochemical cells sensitized by xanthene dyes and tetraphenylporphines. Effect of substitution on the electron injection processes

    Energy Technology Data Exchange (ETDEWEB)

    Matsumura, M.; Mitsuda, K.; Yoshizawa, N.; Tsubomura, H.

    1981-03-01

    The photocurrents in zinc oxide and titanium dioxide electrodes sensitized by anionic xanthene dyes (Eosine Y, Phloxine B, Erythrosine, and Rose Bengal) and metal tetraphenylporphines were studied in aqueous solutions. The quantum efficiencies of the photocurrents sensitized by anionic xanthene dyes were unaffected by substitution of the dye with various halogen atoms, while those sensitized by the tetraphenylporphines were affected by changing the central metal. It is concluded from these results that the electron injection from the excited xanthene dyes to the semiconductor electrodes is a process so rapid (much less than 0.1 ns) that no internal quenching processes can compete with it, while that from the tetraphynelporphines is relatively slow competing with the internal deactivation processes. It is also concluded that the electron back transfer from the semiconductor conduction band to the oxidized dye decreases the sensitization efficiency.

  13. Two-color HgCdTe infrared staring focal plane arrays

    Science.gov (United States)

    Smith, Edward P.; Pham, Le T.; Venzor, Gregory M.; Norton, Elyse; Newton, Michael; Goetz, Paul; Randall, Valerie; Pierce, Gregory; Patten, Elizabeth A.; Coussa, Raymond A.; Kosai, Ken; Radford, William A.; Edwards, John; Johnson, Scott M.; Baur, Stefan T.; Roth, John A.; Nosho, Brett; Jensen, John E.; Longshore, Randolph E.

    2003-12-01

    Raytheon Vision Systems (RVS) in collaboration with HRL Laboratories is contributing to the maturation and manufacturing readiness of third-generation two-color HgCdTe infrared staring focal plane arrays (FPAs). This paper will highlight data from the routine growth and fabrication of 256x256 30μm unit-cell staring FPAs that provide dual-color detection in the mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) spectral regions. FPAs configured for MWIR/MWIR, MWIR/LWIR and LWIR/LWIR detection are used for target identification, signature recognition and clutter rejection in a wide variety of space and ground-based applications. Optimized triple-layer-heterojunction (TLHJ) device designs and molecular beam epitaxy (MBE) growth using in-situ controls has contributed to individual bands in all two-color FPA configurations exhibiting high operability (>99%) and both performance and FPA functionality comparable to state-of-the-art single-color technology. The measured spectral cross talk from out-of-band radiation for either band is also typically less than 10%. An FPA architecture based on a single mesa, single indium bump, and sequential mode operation leverages current single-color processes in production while also providing compatibility with existing second-generation technologies.

  14. HOT MWIR HgCdTe performance on CZT and alternative substrates

    Science.gov (United States)

    Pellegrino, Joseph G.; DeWames, Roger; Perconti, Philip; Billman, Curtis; Maloney, Patrick

    2012-06-01

    Mid wave infrared (MWIR) imaging in the 3-5 um spectral band has traditionally been performed by InSb sensors. InSb technology is presently limited to a near 80K operating temperature and the hunt has been on for a higher operating temperature (HOT) technology that does as well at 150K as InSb at 80K, but with reduced power requirements. Amongst these alternative technologies are photovoltaic sensors consisting of heterostructures of HgCdTe (MCT). In previous work we assessed the device performance of several alternative MWIR HOT technologies (MCT on Si, MCT on GaAs) as a function of operating temperature. In this work we compare the NEDT histograms for these alternative technologies with InSb to better understand how their performance can be improved at higher temperatures. We also present analysis formalism for quantitatively assessing the number of FPA pixels which reside in the central versus the shoulder portions of the histogram.Begin the Introduction two lines below the Keywords. The manuscript should not have headers, footers, or page numbers. It should be in a onecolumn format. References are often noted in the text1 and cited at the end of the paper.

  15. Ultra-Low Dark Current HgCdTe Detector in SWIR for Space Applications

    Science.gov (United States)

    Cervera, C.; Boulade, O.; Gravrand, O.; Lobre, C.; Guellec, F.; Sanson, E.; Ballet, P.; Santailler, J. L.; Moreau, V.; Zanatta, J. P.; Fieque, B.; Castelein, P.

    2016-09-01

    This paper presents recent developments at Commissariat à l'Energie atomique, Laboratoire d'Electronique et de Technologie de l'Information infrared laboratory on processing and characterization of p-on-n HgCdTe (MCT) planar infrared focal plane arrays (FPAs) in short-wave infrared (SWIR) spectral band for the astrophysics applications. These FPAs have been grown using both liquid phase epitaxy and molecular beam epitaxy on a lattice-matched CdZnTe substrate. This technology exhibits lower dark current and lower series resistance in comparison with n-on-p vacancy-doped architecture and is well adapted for low flux detection or high operating temperature. This architecture has been evaluated for space applications in long-wave infrared and very-long-wave infrared spectral bands with cut-off wavelengths from 10 μm up to 17 μm at 78 K and is now evaluated for the SWIR range. The metallurgical nature of the absorbing layer is also examined and both molecular beam epitaxy and liquid phase epitaxy have been investigated. Electro-optical characterizations have been performed on individual photodiodes from test arrays, whereas dark current investigation has been performed with a fully functional readout integrated circuit dedicated to low flux operations.

  16. Fast batch injection analysis of H{sub 2}O{sub 2} using an array of Pt-modified gold microelectrodes obtained from split electronic chips

    Energy Technology Data Exchange (ETDEWEB)

    Pacheco, Bruno D.; Valerio, Jaqueline [Centro de Ciencias e Humanidades - Universidade Presbiteriana Mackenzie, Rua da Consolacao, 896, 01302-907 Sao Paulo, SP (Brazil); Angnes, Lucio [Departamento de Quimica Fundamental, Instituto de Quimica da USP, Av. Prof. Lineu Prestes, 748, 05508-000 Cidade Universitaria, Sao Paulo, SP (Brazil); Pedrotti, Jairo J., E-mail: jpedrotti@mackenzie.br [Centro de Ciencias e Humanidades - Universidade Presbiteriana Mackenzie, Rua da Consolacao, 896, 01302-907 Sao Paulo, SP (Brazil)

    2011-06-24

    Graphical abstract: Highlights: > An array of gold microelectrodes modified with Pt was used for batch injection analysis of H{sub 2}O{sub 2} in rainwater. > The microelectrode array (n = 14) was obtained from electronic chips developed for surface mounted device technology. > The analytical frequency of the method can attain 300 determinations per hour. > The volume-weighted mean concentration of H{sub 2}O{sub 2} in rainwater investigated (n = 25) was 14.2 {mu}mol L{sup -1}. - Abstract: A fast and robust analytical method for amperometric determination of hydrogen peroxide (H{sub 2}O{sub 2}) based on batch injection analysis (BIA) on an array of gold microelectrodes modified with platinum is proposed. The gold microelectrode array (n = 14) was obtained from electronic chips developed for surface mounted device technology (SMD), whose size offers advantages to adapt them in batch cells. The effect of the dispensing rate, volume injected, distance between the platinum microelectrodes and the pipette tip, as well as the volume of solution in the cell on the analytical response were evaluated. The method allows the H{sub 2}O{sub 2} amperometric determination in the concentration range from 0.8 {mu}mol L{sup -1} to 100 {mu}mol L{sup -1}. The analytical frequency can attain 300 determinations per hour and the detection limit was estimated in 0.34 {mu}mol L{sup -1} (3{sigma}). The anodic current peaks obtained after a series of 23 successive injections of 50 {mu}L of 25 {mu}mol L{sup -1} H{sub 2}O{sub 2} showed an RSD < 0.9%. To ensure the good selectivity to detect H{sub 2}O{sub 2}, its determination was performed in a differential mode, with selective destruction of the H{sub 2}O{sub 2} with catalase in 10 mmol L{sup -1} phosphate buffer solution. Practical application of the analytical procedure involved H{sub 2}O{sub 2} determination in rainwater of Sao Paulo City. A comparison of the results obtained by the proposed amperometric method with another one which

  17. Improving hole injection and carrier distribution in InGaN light-emitting diodes by removing the electron blocking layer and including a unique last quantum barrier

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Liwen, E-mail: lwcheng@yzu.edu.cn; Chen, Haitao; Wu, Shudong [College of Physics Science and Technology & Institute of Optoelectronic Technology, Yangzhou University, Yangzhou 225002 (China)

    2015-08-28

    The effects of removing the AlGaN electron blocking layer (EBL), and using a last quantum barrier (LQB) with a unique design in conventional blue InGaN light-emitting diodes (LEDs), were investigated through simulations. Compared with the conventional LED design that contained a GaN LQB and an AlGaN EBL, the LED that contained an AlGaN LQB with a graded-composition and no EBL exhibited enhanced optical performance and less efficiency droop. This effect was caused by an enhanced electron confinement and hole injection efficiency. Furthermore, when the AlGaN LQB was replaced with a triangular graded-composition, the performance improved further and the efficiency droop was lowered. The simulation results indicated that the enhanced hole injection efficiency and uniform distribution of carriers observed in the quantum wells were caused by the smoothing and thinning of the potential barrier for the holes. This allowed a greater number of holes to tunnel into the quantum wells from the p-type regions in the proposed LED structure.

  18. Medroxyprogesterone Injection

    Science.gov (United States)

    Medroxyprogesterone intramuscular (into a muscle) injection and medroxyprogesterone subcutaneous (under the skin) injection are used to prevent pregnancy. Medroxyprogesterone subcutaneous injection is also used to treat endometriosis (a condition in which ...

  19. Pentamidine Injection

    Science.gov (United States)

    Pentamidine injection is used to treat pneumonia caused by a fungus called Pneumocystis carinii. It is in ... Pentamidine injection comes as powder to be mixed with liquid to be injected intramuscularly (into a muscle) ...

  20. Performances of a HGCDTE APD Based Detector with Electric Cooling for 2-μm DIAL/IPDA Applications

    Science.gov (United States)

    Dumas, A.; Rothman, J.; Gibert, F.; Lasfargues, G.; Zanatta, J.-P.; Edouart, D.

    2016-06-01

    In this work we report on design and testing of an HgCdTe Avalanche Photodiode (APD) detector assembly for lidar applications in the Short Wavelength Infrared Region (SWIR : 1,5 - 2 μm). This detector consists in a set of diodes set in parallel -making a 200 μm large sensitive area- and connected to a custom high gain TransImpedance Amplifier (TIA). A commercial four stages Peltier cooler is used to reach an operating temperature of 185K. Crucial performances for lidar use are investigated : linearity, dynamic range, spatial homogeneity, noise and resistance to intense illumination.

  1. Interface morphology studies of liquid phase epitaxy grown HgCdTe films by atomic force microscopy

    Science.gov (United States)

    Azoulay, M.; George, M. A.; Burger, A.; Collins, W. E.; Silberman, E.

    1994-04-01

    In this paper we report an investigation of the morphology of the interfaces of liquid phase epitaxy (LPE) grown HgCdTe thin films on CdTe and CdZnTe substrates by atomic force microscopy (AFM) on freshly cleaved (110) crystallographic planes. An empirical observation which may be linked to lattice mismatch was indicated by an angle between the cleavage steps of the substrate to those of the film. The precipitates with size ranging from 5 nm to 20 nm were found to be most apparent near the interface.

  2. Efficient light emission at 1.54 mum from Er in Si excited by hot electron injection through thin suboxide layers

    Science.gov (United States)

    Markmann, M.; Sticht, A.; Bobe, F.; Zandler, G.; Brunner, K.; Abstreiter, G.; Muller, E.

    2002-06-01

    We studied the electroluminescence of Er:O-doped Si pn diodes and unipolar structures with thin SiO1.6 suboxide barriers, which were deposited by molecular-beam epitaxy. These suboxide layers reveal a barrier height of about 320 meV in the conduction band and therefore raise the average kinetic energy of electrons injected through the barrier into the Er:O doped region. These electrons turn out to be advantageous for impact excitation processes with the erbium ion. Compared to conventional reverse biased pn diodes a ten-times higher sigma][tau product for impact excitation (1.2 x10-19 cm2 s) can be achieved in pn diodes with a suboxide injector at 10 K. The saturation electroluminescence (EL) intensity is enlarged in reverse bias and suppressed in forward bias compared to a diode without a suboxide layer. These structures exhibit a reduction of the EL intensity by a factor of 3 for increasing temperature from 10 to 300 K and yield a two-times higher EL output at 1.54 mum and 300 K than an optimized reverse biased pn diode without a suboxide layer. At 300 K this results in an absolute output power of 250 nW and an external quantum efficiency of 1.3 x10-4 at 1.54 mum. For the unipolar structure with an integrated suboxide barrier the EL output also depends on the current flow direction: Injecting the electrons hot through the suboxide barrier into the Er:O doped region results in a six times higher EL intensity at 1.54 mum than for the opposite biasing condition. The EL is detectable up to 300 K with a reduction of the intensity by a factor of 8 between 10 and 300 K. Monte Carlo simulations were performed on unipolar structures with an incorporated barrier to provide insight into the carrier density and carrier energy distribution after injection through the barrier.

  3. HgCdTe Detectors for Space and Science Imaging: General Issues and Latest Achievements

    Science.gov (United States)

    Gravrand, O.; Rothman, J.; Cervera, C.; Baier, N.; Lobre, C.; Zanatta, J. P.; Boulade, O.; Moreau, V.; Fieque, B.

    2016-09-01

    HgCdTe (MCT) is a very versatile material system for infrared (IR) detection, suitable for high performance detection in a wide range of applications and spectral ranges. Indeed, the ability to tailor the cutoff frequency as close as possible to the needs makes it a perfect candidate for high performance detection. Moreover, the high quality material available today, grown either by molecular beam epitaxy or liquid phase epitaxy, allows for very low dark currents at low temperatures, suitable for low flux detection applications such as science imaging. MCT has also demonstrated robustness to the aggressive environment of space and faces, therefore, a large demand for space applications. A satellite may stare at the earth, in which case detection usually involves a lot of photons, called a high flux scenario. Alternatively, a satellite may stare at outer space for science purposes, in which case the detected photon number is very low, leading to low flux scenarios. This latter case induces very strong constraints onto the detector: low dark current, low noise, (very) large focal plane arrays. The classical structure used to fulfill those requirements are usually p/ n MCT photodiodes. This type of structure has been deeply investigated in our laboratory for different spectral bands, in collaboration with the CEA Astrophysics lab. However, another alternative may also be investigated with low excess noise: MCT n/ p avalanche photodiodes (APD). This paper reviews the latest achievements obtained on this matter at DEFIR (LETI and Sofradir common laboratory) from the short wave infrared (SWIR) band detection for classical astronomical needs, to long wave infrared (LWIR) band for exoplanet transit spectroscopy, up to very long wave infrared (VLWIR) bands. The different available diode architectures ( n/ p VHg or p/ n, or even APDs) are reviewed, including different available ROIC architectures for low flux detection.

  4. Bad news about an old poison. A case of nicotine poisoning due to both ingestion and injection of the content of an electronic cigarette refill

    Directory of Open Access Journals (Sweden)

    Gianfranco Cervellin

    2013-10-01

    Full Text Available There are increasing concerns about the escalating use of electronic cigarettes (e-cigarettes. In particular, smokers have been advised by important agencies such as the US Food and Drug Administration about the potential harm to the health of these products, being now considered as drug delivery devices. The leading issues supporting this statement include the repeated inhalation of propylene glycol that is used as a diluent in refills, accidental poisoning, as well as evidence that ecigarettes may promote continued smoking since their use may compromise quitting motivations. Some authors have minimized these risks, considering the potential advantages of these devices for public health. Here we describe the first case of nicotine poisoning due to both ingestion and intravenous injection of the content of an e-cigarette refill, incorrectly mixed with methadone, bottled in a generic vial.

  5. Plasmon resonance energy transfer and hot electron injection induced high photocurrent density in liquid junction Ag@Ag2S sensitized solar cells.

    Science.gov (United States)

    Wu, Dapeng; Wang, Fujuan; Wang, Hongju; Cao, Kun; Gao, Zhiyong; Xu, Fang; Jiang, Kai

    2016-10-18

    An in situ technique was developed to deposit Ag@Ag2S core-shell quantum dots on a SnO2 mesoporous film for solar energy conversion. When adopted as a photoanode, an impressive high photocurrent density of ∼25.6 mA cm(-2) was demonstrated in a cell configuration using polysulfide S(2-)/Sn(2-) as an electrolyte and Cu2S/brass as a counter electrode, which leads to a power conversion efficiency of ∼0.784% for this environmentally benign device. Optical measurements showed that Ag nanoparticles could be employed as plasmon resonance centers to enhance the harvesting efficiency of incident light at the visible and near-infrared range. Moreover, photoluminescence spectra demonstrated fast charge transfer at Ag@Ag2S/SnO2 interfaces, which facilitates direct hot electron injection from sensitizers to the SnO2 matrix and finally gives rise to the high photocurrent density.

  6. Rapid evaluation of doping-spike carrier concentration levels in millimetre-wave GaAs Gunn diodes with hot-electron injection

    Science.gov (United States)

    Farrington, N. E. S.; Carr, M. W.; Missous, M.

    2010-12-01

    This paper describes a novel method for fast, accurate evaluation of doping-spike carrier concentrations in hot-electron injected GaAs Gunn diodes. The technique relies on current asymmetry measurements obtained using pulsed-dc testing of on-wafer quasi-planar Gunn diode test structures, which removes the need for full device fabrication. Small changes in carrier concentration can easily be detected (at a nominal value of 1 × 1018 cm-3) and a greater sensitivity than conventional techniques is demonstrated at the doping levels used. In addition, test structure fabrication can be integrated into the initial Gunn diode front side production process allowing a rapid in-process test to be carried out thus leading to a significant reduction in material characterization cycle time.

  7. 2D hydrodynamic simulations of a variable length gas target for density down-ramp injection of electrons into a laser wakefield accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Kononenko, O., E-mail: olena.kononenko@desy.de [Deutsches Elektronen-Synchrotron DESY, Hamburg (Germany); Lopes, N.C.; Cole, J.M.; Kamperidis, C.; Mangles, S.P.D.; Najmudin, Z. [The John Adams Institute for Accelerator Science, The Blackett Laboratory, Imperial College London, SW7 2BZ UK (United Kingdom); Osterhoff, J. [Deutsches Elektronen-Synchrotron DESY, Hamburg (Germany); Poder, K. [The John Adams Institute for Accelerator Science, The Blackett Laboratory, Imperial College London, SW7 2BZ UK (United Kingdom); Rusby, D.; Symes, D.R. [Central Laser Facility, STFC Rutherford Appleton Laboratory, Chilton, Didcot OX11 0QX (United Kingdom); Warwick, J. [Queens University Belfast, North Ireland (United Kingdom); Wood, J.C. [The John Adams Institute for Accelerator Science, The Blackett Laboratory, Imperial College London, SW7 2BZ UK (United Kingdom); Palmer, C.A.J. [Deutsches Elektronen-Synchrotron DESY, Hamburg (Germany)

    2016-09-01

    In this work, two-dimensional (2D) hydrodynamic simulations of a variable length gas cell were performed using the open source fluid code OpenFOAM. The gas cell was designed to study controlled injection of electrons into a laser-driven wakefield at the Astra Gemini laser facility. The target consists of two compartments: an accelerator and an injector section connected via an aperture. A sharp transition between the peak and plateau density regions in the injector and accelerator compartments, respectively, was observed in simulations with various inlet pressures. The fluid simulations indicate that the length of the down-ramp connecting the sections depends on the aperture diameter, as does the density drop outside the entrance and the exit cones. Further studies showed, that increasing the inlet pressure leads to turbulence and strong fluctuations in density along the axial profile during target filling, and consequently, is expected to negatively impact the accelerator stability.

  8. 碲镉汞e-APD焦平面数字化读出电路设计%Design of digital ROIC for HgCdTe e-APD FPA

    Institute of Scientific and Technical Information of China (English)

    陈国强; 张君玲; 王攀; 周杰; 高磊; 丁瑞军

    2014-01-01

    HgCdTe e-APD工作于线性模式,通过内雪崩倍增效应将一个微弱的信号放大多个数量级。介绍了一个具有列共用ADC制冷型(77 K)数字化混成式HgCdTe e-APD FPA读出电路,可以应用于门控3D-LARDAR成像,有主被动双模式成像功能。 Sigma-delta转换器比较适合于中规模128×128焦平面列共用ADC。调制器采用2-1 MASH单比特结构,开关电容电路实现,数字抽取滤波器采用CIC级联梳状滤波器。采用GLOBALFOUNDRIES 0.35μm CMOS工艺,中心距100μm。设计了量化噪声抵消逻辑消除第一级调制器量化噪声,采用数字电路实现。CIC抽取滤波器的每一级寄存器长度以方差为指标截尾,以降低硬件消耗。并且数字抽取滤波器工作电压降低到1.5 V,可以进一步降低功耗。仿真显示sigma-delta转换器精度大于13 bit,功耗小于2.4 mW,转换速率7.7 k Samples/s。%HgCdTe electron injection avalanche photodiodes(e-APDs) work in linear mode. A weak optical current signal is amplified orders of magnitude due to the internal avalanche mechanism. The design of digital ROIC with a column-shared ADC for cooled (77 K) hybrid e-APDs FPA was presented in this paper. Sigma-delta conversion was a promising solution for high-performance and medium size FPA as 128 ×128. A multistage noise shaping (MASH) 2-1 single bit architecture sigma-delta ADC with switched-capacitor circuits was designed for column-shared ADC. A cascaded integrator-comb (CIC) filter was designed as the digital decimator filter. The circuit was implemented in the GLOBALFOUNDRIES 0.35μm CMOS process on the basis of a 100μm pixel pitch. A quantization noise subtraction circuit in modulator was designed to subtract the quantization noise of first-stage modulator. The register word length of the filter in each stage was carefully dimensioned in order to minimize the required hardware. Furthermore, the digital filters operate with a reduced supply voltage to 1

  9. A mode converter to generate a Gaussian-like mode for injection into the VENUS electron cyclotron resonance ion source

    Energy Technology Data Exchange (ETDEWEB)

    Lyneis, C., E-mail: CMLyneis@lbl.gov; Benitez, J.; Hodgkinson, A.; Strohmeier, M.; Todd, D. [Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Plaum, B. [Institut für Grenzflächenverfahrenstechnik und Plasmatechnologie (IGVP), Stuttgart (Germany); Thuillier, T. [Laboratoire de Physique Subatomique et de Cosmologie, Université Joseph Fourier Grenoble 1, CNRS/IN2P3, Institut Polytechnique de Grenoble, 53 rue des martyrs 38026 Grenoble cedex (France)

    2014-02-15

    A number of superconducting electron cyclotron resonance (ECR) ion sources use gyrotrons at either 24 or 28 GHz for ECR heating. In these systems, the microwave power is launched into the plasma using the TE{sub 01} circular waveguide mode. This is fundamentally different and may be less efficient than the typical rectangular, linearly polarized TE{sub 10} mode used for launching waves at lower frequencies. To improve the 28 GHz microwave coupling in VENUS, a TE{sub 01}-HE{sub 11} mode conversion system has been built to test launching HE{sub 11} microwave power into the plasma chamber. The HE{sub 11} mode is a quasi-Gaussian, linearly polarized mode, which should couple strongly to the plasma electrons. The mode conversion is done in two steps. First, a 0.66 m long “snake” converts the TE{sub 01} mode to the TE{sub 11} mode. Second, a corrugated circular waveguide excites the HE{sub 11} mode, which is launched directly into the plasma chamber. The design concept draws on the development of similar devices used in tokamaks and stellerators. The first tests of the new coupling system are described below.

  10. A new ROIC with high-voltage protection circuit of HgCdTe e-APD FPA for passive and active imaging

    Science.gov (United States)

    Chen, Guoqiang; Zhang, Junling; Wang, Pan; Zhou, Jie; Gao, Lei; Ding, Ruijun

    2012-12-01

    HgCdTe electrons initiated avalanche photodiodes (e-APDs) in linear multiplication mode can be used for high speed applications such as active imaging. A readout integrated circuit of e-APD FPA is designed for dual mode passive/active imaging system. Unit cell circuit architecture of ROIC includes a high voltage protection module, a Sample-Hold circuit module, a comparator, output driver stage and a integrator module which includes a amplifier and three capacitors. Generally, APD FPA works at reversed bias such as 5V-15V in active imaging mode, and pixels' dark currents increase exponentially as the reverse-bias voltage is increased. Some cells of ROIC may be short to high voltage because of avalanche breakdown of diodes. If there is no protection circuit, the whole ROIC would be burnt out. Thus a protection circuit module introduced in every ROIC cell circuit is necessary to make sure the rest units of ROIC can still work. Conventional 5V CMOS process is applied to implement the high voltage protection with the small area other than LDMOS in high voltage BCD process in the limited 100μm×100μm pitch area. In integrator module, three integration capacitors are included in the ROIC to provide switchable well capacity. One of them can be shared in two modes in order to save area. Constraints such as pixel area and power lead us design toward a simple one-stage cascade operational transconductance amplifier (OTA) as pre-amplifier which can avoid potential instability caused by inaccuracy of MOSFET Model at 77K.

  11. Effect of different photoanode nanostructures on the initial charge separation and electron injection process in dye sensitized solar cells: A photophysical study with indoline dyes

    Energy Technology Data Exchange (ETDEWEB)

    Idígoras, Jesús [Nanostructured Solar Cells Group, Department of Physical, Chemical and Natural Systems, Universidad Pablo de Olavide, Ctra. Utrera, km 1, ES-41013 Seville (Spain); Sobuś, Jan [NanoBioMedical Centre, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań (Poland); Quantum Electronics Laboratory, Faculty of Physics, Adam Mickiewicz University in Poznań, Umultowska 85, 61-614 Poznań (Poland); Jancelewicz, Mariusz [NanoBioMedical Centre, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań (Poland); Azaceta, Eneko; Tena-Zaera, Ramon [Materials Division, IK4-CIDETEC, Parque Tecnológico de San Sebastián, Paseo Miramón 196, Donostia-San Sebastián, 20009 (Spain); Anta, Juan A. [Nanostructured Solar Cells Group, Department of Physical, Chemical and Natural Systems, Universidad Pablo de Olavide, Ctra. Utrera, km 1, ES-41013 Seville (Spain); Ziółek, Marcin, E-mail: marziol@amu.edu.pl [Quantum Electronics Laboratory, Faculty of Physics, Adam Mickiewicz University in Poznań, Umultowska 85, 61-614 Poznań (Poland)

    2016-02-15

    Ultrafast and fast charge separation processes were investigated for complete cells based on several ZnO-based photoanode nanostructures and standard TiO{sub 2} nanoparticle layers sensitized with the indoline dye coded D358. Different ZnO morphologies (nanoparticles, nanowires, mesoporous), synthesis methods (hydrothermal, gas-phase, electrodeposition in aqueous media and ionic liquid media) and coatings (ZnO–ZnO core–shell, ZnO–TiO{sub 2} core–shell) were measured by transient absorption techniques in the time scale from 100 fs to 100 μs and in the visible and near-infrared spectral range. All of ZnO cells show worse electron injection yields with respect to those with standard TiO{sub 2} material. Lower refractive index of ZnO than that of TiO{sub 2} is suggested to be an additional factor, not considered so far, that can decrease the performance of ZnO-based solar cells. Evidence of the participation of the excited charge transfer state of the dye in the charge separation process is provided here. The lifetime of this state in fully working devices extends from several ps to several tens of ps, which is much longer than the typically postulated electron injection times in all-organic dye-sensitized solar cells. The results here provided, comprising a wide variety of morphologies and preparation methods, point to the universality of the poor performance of ZnO as photoanode material with respect to standard TiO{sub 2}. - Highlights: • Wide variety of morphologies and preparation methods has been checked for ZnO cells. • All ZnO cells work worse than TiO{sub 2} ones. • Effective refractive index might be an additional factor in solar cell performance. • Excited charge transfer state of indoline dyes participates in the charge separation.

  12. Coherence properties and diagnostics of betatron radiation emitted by an externally-injected electron beam propagating in a plasma channel

    Energy Technology Data Exchange (ETDEWEB)

    Paroli, B., E-mail: bruno.paroli@unimi.it [Dipartimento di Fisica, Universitá degli Studi di Milano and INFN Sezione di Milano, via G. Celoria, 16, 20133 Milano (Italy); Chiadroni, E.; Ferrario, M. [INFN-LNF, via E. Fermi, 00044 Frascati (Italy); Mostacci, A. [“La Sapienza” University, SBAI Department, via A. Scarpa 14, 00161 Rome (Italy); INFN-LNF, via E. Fermi, 00044 Frascati (Italy); Petrillo, V.; Potenza, M.A.C.; Rossi, A.R.; Serafini, L. [Dipartimento di Fisica, Universitá degli Studi di Milano and INFN Sezione di Milano, via G. Celoria, 16, 20133 Milano (Italy)

    2015-07-15

    A 3-dimensional time-domain simulation of X-ray produced by a laser wakefield accelerated electron beam was performed in order to know its properties like intensity, spectrum, divergence and coherence. Particular attention was paid to the coherence around the acceleration axis. The broad spectrum of betatron radiation (1–10 keV) leads to a short coherence length. Nevertheless we observe that under particular detection condition the spatial coherence has a characteristic enlargement. We give a simplified interpretation of this effect in terms of phase shift of the electric field on a virtual detector. Moreover we describe a near field scattering technique to characterize the betatron radiation. This diagnostics will be used to map the transverse spatio-temporal coherence of X-ray radiation in the laser wakefield accelerator under development at Frascati National Laboratories (LNF)

  13. Coherence properties and diagnostics of betatron radiation emitted by an externally-injected electron beam propagating in a plasma channel

    Science.gov (United States)

    Paroli, B.; Chiadroni, E.; Ferrario, M.; Mostacci, A.; Petrillo, V.; Potenza, M. A. C.; Rossi, A. R.; Serafini, L.

    2015-07-01

    A 3-dimensional time-domain simulation of X-ray produced by a laser wakefield accelerated electron beam was performed in order to know its properties like intensity, spectrum, divergence and coherence. Particular attention was paid to the coherence around the acceleration axis. The broad spectrum of betatron radiation (1-10 keV) leads to a short coherence length. Nevertheless we observe that under particular detection condition the spatial coherence has a characteristic enlargement. We give a simplified interpretation of this effect in terms of phase shift of the electric field on a virtual detector. Moreover we describe a near field scattering technique to characterize the betatron radiation. This diagnostics will be used to map the transverse spatio-temporal coherence of X-ray radiation in the laser wakefield accelerator under development at Frascati National Laboratories (LNF).

  14. Quantum oscillations and entanglement in Aharonov-Bohm rings with two magnetic impurities and asymmetric electron injection

    Science.gov (United States)

    Cattapan, G.; Lotti, P.

    2012-09-01

    We study spin-polarized transport through an Aharonov-Bohm ring threaded by magnetic flux, which is serially or laterally coupled to an external waveguide. The ring contains two magnetic impurities, whose spins are coupled to the electron spin through contact spin-spin interactions. In the framework of a quantum waveguide approach, asymmetry effects in the coupling of the ring to the environment are taken into account through a suitable, unitary parametrization of the vertex scattering operator, containing an asymmetry parameter λ and a coupling parameter ɛ. For λ=1, ɛ=4/9 this parametrization gives the same results as the employment of Griffith's boundary conditions. We find that asymmetry may considerably influence the transmission of maximally entangled states through the ring. To this end, we analyze both the Aharonov-Bohm oscillations of the transmission coefficients, and the entanglement between the impurities spins by means of concurrencies. We show that asymmetry is less influential in the side-coupled configuration, with respect to the serial case.

  15. A femtosecond study of the anomaly in electron injection for dye-sensitized solar cells: the influence of isomerization employing Ru(II) sensitizers with anthracene and phenanthrene ancillary ligands.

    Science.gov (United States)

    Cheema, Hammad; Younts, Robert; Ogbose, Louis; Gautam, Bhoj; Gundogdu, Kenan; El-Shafei, Ahmed

    2015-01-28

    In this study, an intriguing difference caused by structural isomerization based on anthracene and phenanthrene stilbazole type ancillary ligands in Ru(ii) sensitizers for dye sensitized solar cells (DSCs) has been investigated using femtosecond transient absorption spectroscopy. Both anthracene and phenanthrene based sensitizers HD-7 and HD-8, respectively, resulted in a similar extinction coefficient, photophysical and thermodynamic free energy of electron injection and dye regeneration as measured by UV-Vis, excited state lifetime and cyclic voltammetry measurements, respectively. However, TiO2 adsorbed HD-7 resulted in up to 45% less photocurrent density than HD-8 although photovoltage was similar owing to comparable thermodynamic characteristics. It was obvious from the measurement of incident photon to current conversion efficiency (IPCE) that excited electrons in HD-7 are prone to internal energy loss before injection into the TiO2 conduction band. Analysis of photo-induced spectral features measured by femtosecond transient absorption spectroscopy showed that excited electrons in HD-7 are prone to ISC (intersystem crossing) much more than HD-8 and those triplet electrons are not injected into TiO2 efficiently. Interestingly, from impedance measurements, HD-7 showed higher recombination resistance than HD-8 and N719, but a shorter lifetime for electrons injected into the TiO2 conduction band.

  16. Patient-rated suitability of a novel electronic device for self-injection of subcutaneous interferon beta-1a in relapsing multiple sclerosis: an international, single-arm, multicentre, Phase IIIb study

    Directory of Open Access Journals (Sweden)

    Verdun di Cantogno Elisabetta

    2010-04-01

    Full Text Available Abstract Background Multiple sclerosis (MS currently requires long-term treatment with disease-modifying drugs, administered parenterally up to once daily. The need for regular self-injection can be a barrier to treatment for many patients. Autoinjectors can help patients overcome problems or concerns with self-injection and could, therefore, improve treatment adherence. This study was performed to assess the suitability of a new electronic device for the subcutaneous (sc administration of interferon (IFN beta-1a, 44 mcg three times weekly, for relapsing MS. Methods In this Phase IIIb, multicentre, single-arm study, patients with relapsing MS who had been consistently self-injecting sc IFN beta-1a using an autoinjector for at least 6 weeks were taught to use the new device and self-administered treatment for 12 weeks thereafter. Patient-rated suitability of the device was assessed at the end of Week 12 using the Patient User Trial Questionnaire. Patient satisfaction with, and evaluation of, the injection process was assessed using the MS Treatment Concern Questionnaire. Trainers evaluated the device using the Trainer User Trial Questionnaire. Results At Week 12, 71.6% (73/102 of patients considered the device 'very suitable' or 'suitable' for self-injection; 92.2% (94/102 reported some degree of suitability and only 7.8% (8/102 found the device 'not at all suitable'. At Weeks 4, 8 and 12, most patients reported that injection preparation and clean-up, performing injections and ease of device use in the previous 4 weeks compared favourably with, or was equivalent to, their previous experience of self-injection. Injection-related pain, injection reactions and 'flu-like' symptoms remained stable over the 12 weeks. Each device feature was rated 'very useful' or 'useful' by at least 80% of patients. All trainers and 95.2% (99/104 of patients found device functions 'very easy' or 'easy' to use. Overall convenience was considered the most important

  17. Patient-rated suitability of a novel electronic device for self-injection of subcutaneous interferon beta-1a in relapsing multiple sclerosis: an international, single-arm, multicentre, Phase IIIb study

    Science.gov (United States)

    2010-01-01

    Background Multiple sclerosis (MS) currently requires long-term treatment with disease-modifying drugs, administered parenterally up to once daily. The need for regular self-injection can be a barrier to treatment for many patients. Autoinjectors can help patients overcome problems or concerns with self-injection and could, therefore, improve treatment adherence. This study was performed to assess the suitability of a new electronic device for the subcutaneous (sc) administration of interferon (IFN) beta-1a, 44 mcg three times weekly, for relapsing MS. Methods In this Phase IIIb, multicentre, single-arm study, patients with relapsing MS who had been consistently self-injecting sc IFN beta-1a using an autoinjector for at least 6 weeks were taught to use the new device and self-administered treatment for 12 weeks thereafter. Patient-rated suitability of the device was assessed at the end of Week 12 using the Patient User Trial Questionnaire. Patient satisfaction with, and evaluation of, the injection process was assessed using the MS Treatment Concern Questionnaire. Trainers evaluated the device using the Trainer User Trial Questionnaire. Results At Week 12, 71.6% (73/102) of patients considered the device 'very suitable' or 'suitable' for self-injection; 92.2% (94/102) reported some degree of suitability and only 7.8% (8/102) found the device 'not at all suitable'. At Weeks 4, 8 and 12, most patients reported that injection preparation and clean-up, performing injections and ease of device use in the previous 4 weeks compared favourably with, or was equivalent to, their previous experience of self-injection. Injection-related pain, injection reactions and 'flu-like' symptoms remained stable over the 12 weeks. Each device feature was rated 'very useful' or 'useful' by at least 80% of patients. All trainers and 95.2% (99/104) of patients found device functions 'very easy' or 'easy' to use. Overall convenience was considered the most important benefit of the device

  18. Doripenem Injection

    Science.gov (United States)

    ... injection is in a class of medications called carbapenem antibiotics. It works by killing bacteria.Antibiotics such ... if you are allergic to doripenem injection; other carbapenem antibiotics such as imipenem/cilastatin (Primaxin) or meropenem ( ...

  19. Methotrexate Injection

    Science.gov (United States)

    Methotrexate injection is used alone or in combination with other medications to treat gestational trophoblastic tumors (a ... in bones) after surgery to remove the tumor. Methotrexate injection is also used to treat severe psoriasis ( ...

  20. Bendamustine Injection

    Science.gov (United States)

    Bendamustine injection is used to treat chronic lymphocytic leukemia (CLL; a type of cancer of the white ... injection. You should use birth control to prevent pregnancy in yourself or your partner during your treatment ...

  1. Caspofungin Injection

    Science.gov (United States)

    Caspofungin injection is used in adults and children 3 months of age and older to treat yeast ... people with a weakened ability to fight infection. Caspofungin injection is in a class of antifungal medications ...

  2. Temozolomide Injection

    Science.gov (United States)

    Temozolomide is used to treat certain types of brain tumors. Temozolomide is in a class of medications called alkylating ... Temozolomide injection comes as a powder to be added to fluid and injected over 90 minutes intravenously ( ...

  3. Pembrolizumab Injection

    Science.gov (United States)

    Pembrolizumab injection is used to treat melanoma (a type of skin cancer) that cannot be treated with ... who have a specific type of melanoma tumor. Pembrolizumab injection is also used to treat a certain ...

  4. Lacosamide Injection

    Science.gov (United States)

    ... injection is in a class of medications called anticonvulsants. It works by decreasing abnormal electrical activity in ... older (about 1 in 500 people) who took anticonvulsants like lacosamide injection to treat various conditions during ...

  5. Midazolam Injection

    Science.gov (United States)

    ... injection is in a class of medications called benzodiazepines. It works by slowing activity in the brain ... breast-feeding.talk to your doctor about the risks and benefits of receiving midazolam injection if you ...

  6. Doxycycline Injection

    Science.gov (United States)

    Doxycycline injection is used to treat or prevent bacterial infections, including pneumonia and other respiratory tract infections. ... certain skin, genital, intestine, and urinary system infections. Doxycycline injection may be used to treat or prevent ...

  7. Paclitaxel Injection

    Science.gov (United States)

    ... with other medications. Paclitaxel injection manufactured with polyoxyethylated castor oil is used to treat ovarian cancer (cancer that ... cancer, and lung cancer. Paclitaxel injection with polyoxyethylated castor oil is also used to treat Kaposi's sarcoma (a ...

  8. Etanercept Injection

    Science.gov (United States)

    ... will be using the prefilled syringe or automatic injection device, tell your doctor if you or the person who will be injecting the medication for you are allergic to rubber or latex.tell your doctor and pharmacist what ...

  9. Cyclosporine Injection

    Science.gov (United States)

    Cyclosporine injection is used with other medications to prevent transplant rejection (attack of the transplanted organ by ... who have received kidney, liver, and heart transplants. Cyclosporine injection should only be used to treat people ...

  10. Estrogen Injection

    Science.gov (United States)

    The estradiol cypionate and estradiol valerate forms of estrogen injection are used to treat hot flushes (hot ... should consider a different treatment. These forms of estrogen injection are also sometimes used to treat the ...

  11. Cefotaxime Injection

    Science.gov (United States)

    Cefotaxime injection is used to treat certain infections caused by bacteria including pneumonia and other lower respiratory ... skin, blood, bone, joint, and urinary tract infections. Cefotaxime injection may also be used before surgery, and ...

  12. Ustekinumab Injection

    Science.gov (United States)

    ... Do not inject into an area where the skin is tender, bruised, red, or hard or where you have scars or stretch marks.Your doctor or pharmacist will ... injection.you should know that ustekinumab injection may decrease your ability ... new or changing skin lesions, minor infections (such as open cuts or ...

  13. Ranitidine Injection

    Science.gov (United States)

    Ranitidine injection comes as a solution (liquid) to be mixed with another fluid and injected intravenously (into a vein) over 5 to 20 minutes. Ranitidine may also be injected into a muscle. It is usually given every 6 to 8 hours, but may also be given ...

  14. The Effect of Metal-Semiconductor Contact on the Transient Photovoltaic Characteristic of HgCdTe PV Detector

    Directory of Open Access Journals (Sweden)

    Haoyang Cui

    2013-01-01

    Full Text Available The transient photovoltaic (PV characteristic of HgCdTe PV array is studied using an ultrafast laser. The photoresponse shows an apparent negative valley first, then it evolves into a positive peak. By employing a combined theoretical model of pn junction and Schottky potential, this photo-response polarity changing curves can be interpreted well. An obvious decreasing of ratio of negative valley to positive peak can be realized by limiting the illumination area of the array electrode. This shows that the photoelectric effect of Schottky barrier at metal-semiconductor (M/S interface is suppressed, which will verify the correctness of the model. The characteristic parameters of transient photo-response induced from p-n junction and Schottky potential are extracted by fitting the response curve utilizing this model. It shows that the negative PV response induced by the Schottky barrier decreases the positive photovoltage generated by the pn junction.

  15. The effect of metal-semiconductor contact on the transient photovoltaic characteristic of HgCdTe PV detector.

    Science.gov (United States)

    Cui, Haoyang; Xu, Yongpeng; Yang, Junjie; Tang, Naiyun; Tang, Zhong

    2013-01-01

    The transient photovoltaic (PV) characteristic of HgCdTe PV array is studied using an ultrafast laser. The photoresponse shows an apparent negative valley first, then it evolves into a positive peak. By employing a combined theoretical model of pn junction and Schottky potential, this photo-response polarity changing curves can be interpreted well. An obvious decreasing of ratio of negative valley to positive peak can be realized by limiting the illumination area of the array electrode. This shows that the photoelectric effect of Schottky barrier at metal-semiconductor (M/S) interface is suppressed, which will verify the correctness of the model. The characteristic parameters of transient photo-response induced from p-n junction and Schottky potential are extracted by fitting the response curve utilizing this model. It shows that the negative PV response induced by the Schottky barrier decreases the positive photovoltage generated by the pn junction.

  16. Clinical outcomes of long-acting injectable risperidone in patients with schizophrenia: six-month follow-up from the Electronic Schizophrenia Treatment Adherence Registry in Latin America

    Science.gov (United States)

    Apiquian, Rogelio; Córdoba, Rodrigo; Louzã, Mario

    2011-01-01

    Background Risperidone long-acting injection (RLAI) has been shown to be efficacious, improve compliance, and increase long-term retention rate on therapy. The aim of this work was to determine the effect of RLAI on clinical outcome and hospitalization rate in patients with schizophrenia or schizoaffective disorder enrolled in the electronic Schizophrenia Treatment Adherence Registry in Latin America. Methods Data were collected at baseline, retrospectively for the 12 months prior to baseline, and prospectively every three months for 24 months. Hospitalization prior to therapy was assessed by a retrospective chart review. Efficacy and functioning were evaluated using Clinical Global Impression of Illness Severity (CGI-S), Personal and Social Performance (PSP), and Global Assessment of Functioning (GAF) scores. Relapse and treatment were also registered. Results Patients were recruited in Mexico (n = 53), Brazil (n = 11), and Colombia (n = 15). Sixty-five percent (n = 52) were male, and mean age was 32.9 years. Patients were classified as having schizophrenia (n = 73) or schizoaffective disorder (n = 6). The mean dose of RLAI at six months was 34.1 mg (standard deviation = 10.2 mg). The percentage of hospitalized patients before treatment was 28.2% and 5.1% at six months after initiating RLAI (P < 0.001). Significant changes were registered on CGI-S, GAF, and PSP scores. Conclusions RLAI was associated with an improvement in clinical symptoms and functioning, and a greater reduction in hospitalization. PMID:21326651

  17. HgCdTe technology in Germany: the past, the present, and the future

    Science.gov (United States)

    Cabanski, W.; Ziegler, J.

    2009-05-01

    The first HgCdTe (MCT) activities at AEG-Telefunken in Germany were started in 1976. As part of the closing of AEG, the Heilbronn based IR-technology division was established as a spin-off company in 1995, under the brand name of AIM Infrarot-Module GmbH. A rapidly growing team of scientists focused on the detector-dewar-cooler technology and the development of linear photoconductive MCT arrays by applying the solid-state-recrystallization (SSR) technique for MCT growth, depositing and thinning MCT on sapphire substrates and oxide passivation. In 1979, after successful development of an own MCT-technology base, AEG-Telefunken entered into a license agreement with Texas Instruments for US Common Module (CM) technology in order to speed up the entry into full scale production with a transfer of MCT-material, dewar and cooler processes. CMs are still manufactured in small numbers. At the same time, a proprietary pc-MCT technology, independent of the CM production line, was developed and continuously matured and is today successfully applied in various custom designs like detectors for smart ammunition, for commercial and space applications. In 1982 started the development of 2nd Gen. photovoltaic MCT detectors, based on liquid-phase-epitaxy (LPE) in tilting and dipping technique and on planar array technology with Hg-Diffusion and ion implantation for pn-junction formation and CdTe/ZnS passivation. Linear MCT arrays in the 8-10,5 μm wavelength range with state of the art electro-optical performance have rapidly been demonstrated. Within the frame of the European anti-tank program TRIGAT, a two-way know-how-transfer between AEGTelefunken and SOFRADIR was established for linear LW MCT array processing, flip-chip-technology and dewar technology. Today, AIM's 2nd Gen. portfolio is based on MCT-LPE in dipping technique on CdZnTe substrates, characterized by a very low defect and dislocation density for 0,9 μm to 15μm wavelength application. Array processing is performed

  18. Subcutaneous Injections

    DEFF Research Database (Denmark)

    Thomsen, Maria

    This thesis is about visualization and characterization of the tissue-device interaction during subcutaneous injection. The tissue pressure build-up during subcutaneous injections was measured in humans. The insulin pen FlexTouchr (Novo Nordisk A/S) was used for the measurements and the pressure...... build-up was evaluated indirectly from the changes in the flow rate between subcutaneous injections and air injections. This method enabled the tissue counter pressure to be evaluated without a formal clinical study approval. The measurements were coupled to a model for the pressure evolution...

  19. Injection MD

    CERN Document Server

    Bartmann, W; Bracco, C; Drosdal, L; Gianfelice, E; Goddard, B; Kain, V; Papaphilippou, Y; Vanbavinckhove, G

    2012-01-01

    This note summarizes the results obtained at injection during the 2nd MD block and the floating MD block in July. Highlights are presented for injection in the LHC with the Q20 SPS optics, influence of the supercycle and injection with 25 ns bunch spacing. Beams were successfully injected into the LHC using the Q20 optics [1, 3]. Small corrections were needed to steer the beam in the transfer lines. Dispersion measurements were conducted for both beams. The horizontal normalized dispersion in TI2 was a factor 2 smaller for Q20 with respect to Q26, for TI8 on the other hand the opposite was observed. The results for injection loss dependency on super cycle composition show only a small increase in losses for beam 2. The losses observed must therefore mainly come from other sources such as shot-by-shot stability or quality of scraping. For the injection with 25 ns bunch spacing bunches were injected for both beams. For B1 up to the maximum of 288 bunches. For B2 on the other only up to 144 bunches were injected...

  20. Effects of Gravity on the Double-Diffusive Convection during Directional Solidification of a Non-Dilute Alloy with Application to the HgCdTe

    Science.gov (United States)

    Bune, Andris; Gillies, Donald; Lehoczky, Sandor

    1999-01-01

    General 2-D and 3-D finite element model of non-dilute alloy solidification was used to simulate growth of HgCdTe in terrestrial and microgravity conditions. Parametric research was undertaken to investigate effects of gravity level, gravity vector orientation and growth velocity on the pattern of melt convection, shape of crystal/melt interface and radial thermal gradient. Verification of the model was undertaken by comparison with previously published results. For low growth velocities plane front solidification occurs. The location and the shape of the interface was determined using melting temperatures obtained from the HgCdTe liquidus curve. The low thermal conductivity of the solid HgCdTe causes thermal short circuit through the ampoule walls, resulting in curved isotherms in the vicinity of the interface. Double-diffusive convection in the melt is caused by radial temperature gradients and by material density inversion with temperature. Cooling from below and the rejection at the solid-melt interface of the heavier HgTe-rich solute each tend to reduce convection. Because of these complicating factors dimensional rather then non-dimensional modeling was performed. For gravity levels higher then 10(exp -7) of terrestrial one it was found that the maximum convection velocity is extremely sensitive to gravity vector orientation and can be reduced at least by 50% by choosing proper orientation of the ampoule. The predicted interface shape is in agreement with one obtained experimentally by quenching.

  1. Effects of Gravity on the Double-Diffusive Convection During Directional Solidification of a Non-Dilute Alloy with Application to HgCdTe

    Science.gov (United States)

    Bune, Andris V.; Gillies, Donald C.; Lehoczky, Sandor L.

    1999-01-01

    A general 2-D and 3-D finite element model of non-dilute alloy solidification was used to simulate growth of HgCdTe in terrestrial and microgravity conditions. Verification of the 3-D model was undertaken by comparison with previously published results on convection in an inclined cylinder. For low growth velocities, plane front solidification occurs. The location and the shape of the interface were determined using melting temperatures obtained from the HgCdTe liquidus curve. The low thermal conductivity of the solid HgCdTe causes a thermal short circuit through the ampoule walls, resulting in curved isotherms in the vicinity of the interface. Double-diffusive convection in the melt is caused by radial temperature gradients and by material density inversion due to the combined effects of composition and temperature. Cooling from below and the rejection at the solid-melt interface of the heavier HgTe-rich solute each tend to reduce convection. Because of these complicating factors, dimensional rather than non-dimensional modeling was performed. the predicted interface shape is in agreement with one obtained experimentally by quenching.

  2. Nondestructive Characterization of Residual Threading Dislocation Density in HgCdTe Layers Grown on CdZnTe by Liquid-Phase Epitaxy

    Science.gov (United States)

    Fourreau, Y.; Pantzas, K.; Patriarche, G.; Destefanis, V.

    2016-09-01

    The performance of mercury cadmium telluride (MCT)-based infrared (IR) focal-plane arrays is closely related to the crystalline perfection of the HgCdTe thin film. In this work, Te-rich, (111)B-oriented HgCdTe epilayers grown by liquid-phase epitaxy on CdZnTe substrates have been studied. Surface atomic steps are shown on as-grown MCT materials using atomic force microscopy (AFM) and white-light interferometry (WLI), suggesting step-flow growth. Locally, quasiperfect surface spirals are also evidenced. A demonstration is given that these spirals are related to the emergence of almost pure screw threading dislocations. A nondestructive and quantitative technique to measure the threading dislocation density is proposed. The technique consists of counting the surface spirals on the as-grown MCT surface from images obtained by either AFM or WLI measurements. The benefits and drawbacks of both destructive—chemical etching of HgCdTe dislocations—and nondestructive surface imaging techniques are compared. The nature of defects is also discussed. Finally, state-of-the-art threading dislocation densities in the low 104 cm-2 range are evidenced by both etch pit density (EPD) and surface imaging measurements.

  3. Clinical outcomes of long-acting injectable risperidone in patients with schizophrenia: six-month follow-up from the Electronic Schizophrenia Treatment Adherence Registry in Latin America

    Directory of Open Access Journals (Sweden)

    Mario Louzã

    2010-12-01

    Full Text Available Rogelio Apiquian1, Rodrigo Córdoba2, Mario Louzã31Americas University, Behavior and Development Sciences Division, Mexico City, Mexico; 2Nervous System Research Center-CISNE, Bogota, Colombia; 3Schizophrenia Research Program, Institute of Psychiatry, Faculty of Medicine, University of São Paulo, BrazilBackground: Risperidone long-acting injection (RLAI has been shown to be efficacious, improve compliance, and increase long-term retention rate on therapy. The aim of this work was to determine the effect of RLAI on clinical outcome and hospitalization rate in patients with schizophrenia or schizoaffective disorder enrolled in the electronic Schizophrenia Treatment Adherence Registry in Latin America.Methods: Data were collected at baseline, retrospectively for the 12 months prior to baseline, and prospectively every three months for 24 months. Hospitalization prior to therapy was assessed by a retrospective chart review. Efficacy and functioning were evaluated using Clinical Global Impression of Illness Severity (CGI-S, Personal and Social Performance (PSP, and Global Assessment of Functioning (GAF scores. Relapse and treatment were also registered.Results: Patients were recruited in Mexico (n = 53, Brazil (n = 11, and Colombia (n = 15. Sixty-five percent (n = 52 were male, and mean age was 32.9 years. Patients were classified as having schizophrenia (n = 73 or schizoaffective disorder (n = 6. The mean dose of RLAI at six months was 34.1 mg (standard deviation = 10.2 mg. The percentage of hospitalized patients before treatment was 28.2% and 5.1% at six months after initiating RLAI (P < 0.001. Significant changes were registered on CGI-S, GAF, and PSP scores.Conclusions: RLAI was associated with an improvement in clinical symptoms and functioning, and a greater reduction in hospitalization.Keywords: long-acting, risperidone, schizophrenia, schizoaffective disorder, Latin America

  4. Subcutaneous Injections

    DEFF Research Database (Denmark)

    Thomsen, Maria

    This thesis is about visualization and characterization of the tissue-device interaction during subcutaneous injection. The tissue pressure build-up during subcutaneous injections was measured in humans. The insulin pen FlexTouchr (Novo Nordisk A/S) was used for the measurements and the pressure...... build-up was evaluated indirectly from the changes in the flow rate between subcutaneous injections and air injections. This method enabled the tissue counter pressure to be evaluated without a formal clinical study approval. The measurements were coupled to a model for the pressure evolution...... in subcutaneous tissue, based on mass conservation and flow in a porous medium. From the measurements the flow permeability and bulk modulus of the tissue were determined. In the adipose tissue the drug forms a bolus from where it is absorbed by the blood capillaries. The spatial distribution of the injected...

  5. Characterization of HgCdTe and Related Materials and Substrates for Third Generation Infrared Detectors

    Science.gov (United States)

    2012-12-01

    Markunas. J. D. Benson, and D. J. Smith, J. Electron. Mater. (2012). submitted. 5 J. Chai, O. C. Noriega , J. H. Dinan, and T. H. Myers, J. Electron...127 110 REFERENCES 1 J. Chai, O. C. Noriega , J. H. Dinan, and T. H. Myers, J. Electron. Mater. 41...3001(2012) 2 J. Chai, O.C. Noriega , J. H. Dinan, J. J. Kim, D. J. Smith, and T. H. Myers, J. Electron. Mater. (2012), submitted. 3 Y.-H. Zhang

  6. Comparison of the steady-state and transient engine performance in case of electronic carburetor control and central fuel injection. Vergleich von elektronisch geregeltem Vergaser und Zentraleinspritzung hinsichtlich des stationaeren und instationaeren Motorbetriebsverhaltens

    Energy Technology Data Exchange (ETDEWEB)

    Smetana, G.

    1989-01-01

    Modern passenger cars with spark ignition engines are commonly equipped with lambda catalysts and air-ratio controlled mixing systems in order to meet the present and future exhaust regulations. Centrally controlled mixing systems today are either carburetors with electronic control or intermittent central injection systems. In the framework of this study, these two mixing systems were investigated in fundamental studies and practical tests with regard to their quality of atomisation, mixing in the suction tube, and accuracy of fuel dosage in transient phase operation. The investigations lasted several years. In view of the experimental findings, its simple design and variable control options, the technology of intermittent central injection should be preferred to the electronic carburetor in spite of some shortcomings. (orig.) With 71 figs.

  7. Mepolizumab Injection

    Science.gov (United States)

    ... or do not go away: pain, redness, swelling, warmth, burning, or itching in the place mepolizumab was injected headache dry and itchy skin with or without red, scaly rashes back pain muscle spasms Some side ...

  8. Metoclopramide Injection

    Science.gov (United States)

    ... and feeling of fullness that lasts long after meals. Metoclopramide injection is also used to prevent nausea ... tranylcypromine (Parnate); narcotic medications for pain; sedatives; sleeping pills; tetracycline (Bristacycline, Sumycin); tranquilizers. Your doctor may need ...

  9. Ramucirumab Injection

    Science.gov (United States)

    ... dose of ramucirumab injection. Tell your doctor or nurse if you experience any of the following while you receive ramucirumab: uncontrollable shaking of a part of the body; back pain or spasms; chest pain and tightness; chills; flushing; ...

  10. Alemtuzumab Injection

    Science.gov (United States)

    Alemtuzumab injection is used to treat B-cell chronic lymphocytic leukemia (a slowly developing cancer in which ... of white blood cell accumulate in the body). Alemtuzumab is in a class of medications called monoclonal ...

  11. Ferumoxytol Injection

    Science.gov (United States)

    Ferumoxytol injection is used to treat iron-deficiency anemia (a lower than normal number of red blood ... pharmacist what other prescription and nonprescription medications, vitamins, nutritional supplements, and herbal products you are taking or ...

  12. Fludarabine Injection

    Science.gov (United States)

    Fludarabine injection is used to treat chronic lymphocytic leukemia (CLL; a type of cancer of the white ... a reliable method of birth control to prevent pregnancy during this time. Talk to your doctor for ...

  13. Insulin Injection

    Science.gov (United States)

    ... or buttocks. Do not inject insulin into muscles, scars, or moles. Use a different site for each ... you are using insulin.Alcohol may cause a decrease in blood sugar. Ask your doctor about the ...

  14. Tigecycline Injection

    Science.gov (United States)

    ... in a person who was not in the hospital), skin infections, and infections of the abdomen (area between the ... that developed in people who were in a hospital or foot infections in people who have diabetes. Tigecycline injection is ...

  15. Golimumab Injection

    Science.gov (United States)

    Golimumab injection is used alone or with other medications to relieve the symptoms of certain autoimmune disorders ( ... did not help or could not be tolerated. Golimumab is in a class of medications called tumor ...

  16. Albiglutide Injection

    Science.gov (United States)

    ... will develop tumors of the thyroid gland, including medullary thyroid carcinoma (MTC; a type of thyroid cancer). ... symptoms or those listed in the IMPORTANT WARNING section, stop using albiglutide injection and call your doctor ...

  17. Dexamethasone Injection

    Science.gov (United States)

    ... body tissues,) gastrointestinal disease, and certain types of arthritis. Dexamethasone injection is also used for diagnostic testing. ... effects.tell your doctor if you have a fungal infection (other than on your skin or nails). ...

  18. Hydrocortisone Injection

    Science.gov (United States)

    ... own organs), gastrointestinal disease, and certain types of arthritis. Hydrocortisone injection is also used to treat certain ... effects.tell your doctor if you have a fungal infection (other than on your skin or nails). ...

  19. Methylprednisolone Injection

    Science.gov (United States)

    ... own organs), gastrointestinal disease, and certain types of arthritis. Methylprednisolone injection is also used to treat certain ... effects.tell your doctor if you have a fungal infection (other than on your skin or nails). ...

  20. Glatiramer Injection

    Science.gov (United States)

    ... To inject glatiramer, follow these steps: Remove one blister pack from the carton of glatiramer syringes and place ... paper label and remove the syringe from the blister pack. Check your prefilled syringe to be sure it ...

  1. Dexrazoxane Injection

    Science.gov (United States)

    ... that are used to treat or prevent certain side effects that may be caused by chemotherapy medications. Dexrazoxane injection (Zinecard) is used to prevent or decrease heart damage caused by doxorubicin in women who are ...

  2. Evolocumab Injection

    Science.gov (United States)

    ... autoinjector in hot water, microwave, or place in sunlight.Before you use evolocumab injection, look at the ... chills pain or burning during urination muscle or back pain dizziness stomach pain Some side effects can be ...

  3. Cidofovir Injection

    Science.gov (United States)

    Cidofovir injection is used along with another medication (probenecid) to treat cytomegaloviral retinitis (CMV retinitis) in people with acquired immunodeficiency syndrome (AIDS). Cidofovir is in a class of medications called antivirals. ...

  4. Brivaracetam Injection

    Science.gov (United States)

    ... older. Brivaracetam in a class of medications called anticonvulsants. It works by decreasing abnormal electrical activity in ... older (about 1 in 500 people) who took anticonvulsants like brivaracetam injection to treat various conditions during ...

  5. Diphenhydramine Injection

    Science.gov (United States)

    ... not to use diphenhydramine injection if you are breastfeeding because of the risk of harm to infants.tell your doctor if you have or have ever had asthma or other types of lung disease; glaucoma (a ...

  6. Cefazolin Injection

    Science.gov (United States)

    ... valve, respiratory tract (including pneumonia), biliary tract, and urinary tract infections. Cefazolin injection also may be used before, during, ... to learn about take-back programs in your community. See the FDA's Safe Disposal of Medicines website ( ...

  7. Ceftazidime Injection

    Science.gov (United States)

    ... skin, blood, bone, joint, female genital tract, and urinary tract infections. Ceftazidime injection is in a class of medications ... to learn about take-back programs in your community. See the FDA's Safe Disposal of Medicines website ( ...

  8. Fluconazole Injection

    Science.gov (United States)

    ... and fungal infections of the eye, prostate (a male reproductive organ), skin and nails. Fluconazole injection is ... Motrin, others) and naproxen (Aleve, Anaprox, Naprelan); oral contraceptives (birth control pills); oral medication for diabetes such ...

  9. Moxifloxacin Injection

    Science.gov (United States)

    ... available.Moxifloxacin injection is in a class of antibiotics called fluoroquinolones. It works by killing the bacteria that cause ... you are allergic to moxifloxacin, other quinolone or fluoroquinolone antibiotics such as ciprofloxacin (Cipro), gatifloxacin (Tequin) (not available ...

  10. Levofloxacin Injection

    Science.gov (United States)

    ... available. Levofloxacin injection is in a class of antibiotics called fluoroquinolones. It works by killing bacteria that cause infections. ... severe reaction to levofloxacin; any other quinolone or fluoroquinolone antibiotic such as ciprofloxacin (Cipro), gatifloxacin (Tequin) (not available ...

  11. Ciprofloxacin Injection

    Science.gov (United States)

    ... available. Ciprofloxacin injection is in a class of antibiotics called fluoroquinolones. It works by killing bacteria that cause infections. ... reaction to ciprofloxacin or any other quinolone or fluoroquinolone antibiotic such as gatifloxacin (Tequin) (not available in the ...

  12. Alirocumab Injection

    Science.gov (United States)

    ... further decrease the amount of low-density lipoprotein (LDL) cholesterol ('bad cholesterol') in the blood. Alirocumab injection is ... antibodies. It works by blocking the production of LDL cholesterol in the body to decrease the amount of ...

  13. Chloramphenicol Injection

    Science.gov (United States)

    ... an arm or leg sudden changes in vision pain with eye movement Chloramphenicol injection may cause a condition called gray syndrome in premature and newborn infants. There have also been reports of gray ...

  14. Beam Injection in Recirculator SALO

    CERN Document Server

    Guk, Ivan S; Dovbnya, Anatoly N; Kononenko, Stanislav; Peev, Fedor; Tarasenko, Alexander; Van der Wiel, Marnix

    2005-01-01

    Possible antetypes of injectors for electron recirculator SALO,* intended for nuclear-physical research, are analyzed. The plan injection of beams in recirculator is offered. Expected parameters of beams are designed.

  15. Experimental Determination of Effective Minority Carrier Lifetime in HgCdTe Photovoltaic Detectors Using Optical and Electrical Methods

    Directory of Open Access Journals (Sweden)

    Haoyang Cui

    2015-01-01

    Full Text Available This paper presents experiment measurements of minority carrier lifetime using three different methods including modified open-circuit voltage decay (PIOCVD method, small parallel resistance (SPR method, and pulse recovery technique (PRT on pn junction photodiode of the HgCdTe photodetector array. The measurements are done at the temperature of operation near 77 K. A saturation constant background light and a small resistance paralleled with the photodiode are used to minimize the influence of the effect of junction capacitance and resistance on the minority carrier lifetime extraction in the PIOCVD and SPR measurements, respectively. The minority carrier lifetime obtained using the two methods is distributed from 18 to 407 ns and from 0.7 to 110 ns for the different Cd compositions. The minority carrier lifetime extracted from the traditional PRT measurement is found in the range of 4 to 20 ns for x=0.231–0.4186. From the results, it can be concluded that the minority carrier lifetime becomes longer with the increase of Cd composition and the pixels dimensional area.

  16. Development of non-hybridised HgCdTe detectors for the next generation of astronomical instrumentation

    Science.gov (United States)

    Dalton, Gavin B.; Dennis, Peter N.; Lees, David J.; Hall, David J.; Cairns, John W.; Gordon, Neil T.; Hails, Janet E.; Giess, Jean

    2008-07-01

    The superb image quality that is predicted, and even demanded, for the next generation of Extremely Large Telescopes (ELT) presents a potential crisis in terms of the sheer number of detectors that may be required. Developments in infrared technology have progressed dramatically in recent years, but a substantial reduction in the cost per pixel of these IR arrays will be necessary to permit full exploitation of the capabilities of these telescopes. Here we present an outline and progress report of an initiative to develop a new generation of astronomical grade Cadmium Mercury Telluride (HgCdTe) array detectors using a novel technique which enables direct growth of the sensor diodes onto the Read Out Integrated Circuit (ROIC). This technique removes the need to hybridise the detector material to a separate Silicon readout circuit and provides a route to very large monolithic arrays. We present preliminary growth and design simulation results for devices based on this technique, and discuss the prospects for deployment of this technology in the era of extremely large telescopes.

  17. Single Photon Sensitive HgCdTe Avalanche Photodiode Detector (APD) Project

    Data.gov (United States)

    National Aeronautics and Space Administration — A linear mode HgCdT electron-initiated avalanche photodiode (EAPD) capable of 1570nm photon detection efficiency (PDE) at >10 MHz will be developed. The Phase I...

  18. Electron microscope study on the relationship between macrophages of the alevolar space and spheroid alveolar epithelial cells on mice after injection of squid-ink (sepia-melanin solution into the trachea

    Directory of Open Access Journals (Sweden)

    Suwa,Kiichi

    1977-02-01

    Full Text Available The relationship between alveolar macrophages and spheroid alveolar epithelial cells was studied with the electron microscope after injection of squid-ink solution into the trachea of the mouse. At 20 hours after injection of squid-ink solution slight degeneration was evident in alveolar macrophages with sepia-melanin particles being phagocytized with partial digestion by lysosmes. Furthermore, hardly any changes were seen in mitochondria and inclusion bodies of the spheroid alveolar epithelial cells. In contrast, at one week after injection of squid-ink solution, almost all alveolar macrophages were degenerated with destruction of the ectoplasm in which the ingested sepia-melanin particles were digested by lysosomes into fine particles, and the mitochondria of spheroid alveolar epithelial cells were degenerated and the inclusion bodies were hardly formed. At three weeks after injection of squid-ink solution, alveolar macrophages as well as speroid alveolar epithelial cells showed almost complete recovery of functional structure. As the phagocyte in the alveolar space, neutrophile leucocytes were also observed in addition to the so-called alveolar macrophage.

  19. Sarilumab Injection

    Science.gov (United States)

    ... the needle. Do not try to warm the medication by heating it in a microwave, placing it in warm water or in direct sunlight, or through any other method.Before injecting, check the prefilled syringe to be sure that the expiration date printed on the package has not passed. Look ...

  20. Enfuvirtide Injection

    Science.gov (United States)

    ... inject enfuvirtide into any skin that has a tattoo, scar, bruise, mole, a burn site, or has ... Enfuvirtide may cause side effects. Tell your doctor if any of these symptoms are severe or do not go away: itching, swelling, pain, tingling, discomfort, ...

  1. Fluorouracil Injection

    Science.gov (United States)

    ... of a doctor who is experienced in giving chemotherapy medications for cancer. Treatment with fluorouracil injection may cause serious side effects. ... this medication.If you experience a serious side effect, you or your doctor ... (FDA) MedWatch Adverse Event Reporting program online (http://www.fda.gov/ ...

  2. Lanreotide Injection

    Science.gov (United States)

    Lanreotide injection is used to treat people with acromegaly (condition in which the body produces too much growth hormone, causing enlargement of the hands, feet, and facial features; joint pain; and other symptoms) who have not successfully, or cannot be treated ...

  3. Paliperidone Injection

    Science.gov (United States)

    ... the body slow movements or shuffling walk painful erection of the penis that lasts for hours cough, chills and/or other signs of infection Paliperidone injection may cause other side effects. Call your doctor if you have any unusual problems while taking this medication.If you experience a ...

  4. Ziprasidone Injection

    Science.gov (United States)

    ... stiffness falling confusion sweating loss of consciousness painful erection of the penis that lasts for hours Ziprasidone injection may cause other side effects. Call your doctor if you have any unusual problems while receiving this medication.If you experience a ...

  5. Risperidone Injection

    Science.gov (United States)

    ... control slow movements or shuffling walk falling painful erection of the penis that lasts for hours Risperidone extended-release injection may cause other side effects. Call your doctor if you have any unusual problems while receiving this medication.If you experience a ...

  6. 长波碲镉汞材料 As 掺杂激活研究%Research on arsenic-doping activation in LW HgCdTe

    Institute of Scientific and Technical Information of China (English)

    张舟; 陈慧卿; 朱西安

    2015-01-01

    Arsenic-doped long-wavelength HgCdTe was realized by ion implantation.As doping medium,arsenic shows amphiprotic doping property.When Arsenic only occupies Te-site to be acceptor,P type HgdTe material can be formed.After the arsenic-doped HgCdTe is annealed in the mercury atmosphere,the change of electrical property which is caused by annealing is analyzed.And the effect of mercury pressure,temperature and time on arsenic activa-tion is studied.The activation effect is analyzed by Hall measurement and SIMS.In the end,when the arsenic-doped HgCdTe is annealed in the high temperature and high mercury atmosphere,arsenic activation is achieved.%利用离子注入工艺实现长波碲镉汞材料的 As 掺杂,As 作为掺杂介质表现出两性掺杂行为,而 As 只有占据 Te 位成为受主才能形成 P 型碲镉汞材料。通过对砷掺杂碲镉汞材料在汞气氛中进行退火,分析注入退火引起的样品电学性质的变化,对砷激活退火采用的汞压、温度及时间进行了研究,利用霍尔测试和二次离子质谱仪(SIMS)等手段分析激活效果,研究发现,高温富汞热退火可以实现碲镉汞 As 激活。

  7. Intrinsic Spin Hall Effect Induced by Quantum Phase Transition in HgCdTe Quantum Wells

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Wen; Chang, Kai; /Beijing, Inst. Semiconductors; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

    2010-03-19

    Spin Hall effect can be induced both by the extrinsic impurity scattering and by the intrinsic spin-orbit coupling in the electronic structure. The HgTe/CdTe quantum well has a quantum phase transition where the electronic structure changes from normal to inverted. We show that the intrinsic spin Hall effect of the conduction band vanishes on the normal side, while it is finite on the inverted side. This difference gives a direct mechanism to experimentally distinguish the intrinsic spin Hall effect from the extrinsic one.

  8. Spatial noise limited NETD performance of a HgCdTe hybrid focal plane array

    Science.gov (United States)

    Gopal, Vishnu

    1996-04-01

    This paper presents a model for theoretically estimating the residual spatial noise in a direct injection readout hybrid focal plane array (FPA) consisting of photovoltaic detectors. The procedure consists of computing the response of the pixels after taking into account the nonlinearity induced by the transfer function in the hybrid configuration and the estimated r.m.s. response nonuniformity from the known input parameters of the detector and readout arrays. A linear two point nonuniformity compensation algorithm is applied to the computed pixel responses to calculate the residual spatial noise. Signal-to-spatial noise ratio is then used to estimate the spatial noise limited NETD performance of MWIR and LWIR Hg 1- x Cd x Te hybrid FPAs.

  9. Subcutaneous (SQ) injections

    Science.gov (United States)

    SQ injections; Sub-Q injections; Diabetes subcutaneous injection; Insulin subcutaneous injection ... NIH. Giving a subcutaneous injection . Rockville, MD. National ... of Health and Human Services NIH publications; 2015. Available ...

  10. The direct injection of intense ion beams from a high field electron cyclotron resonance ion source into a radio frequency quadrupole.

    Science.gov (United States)

    Rodrigues, G; Becker, R; Hamm, R W; Baskaran, R; Kanjilal, D; Roy, A

    2014-02-01

    The ion current achievable from high intensity ECR sources for highly charged ions is limited by the high space charge. This makes classical extraction systems for the transport and subsequent matching to a radio frequency quadrupole (RFQ) accelerator less efficient. The direct plasma injection (DPI) method developed originally for the laser ion source avoids these problems and uses the combined focusing of the gap between the ion source and the RFQ vanes (or rods) and the focusing of the rf fields from the RFQ penetrating into this gap. For high performance ECR sources that use superconducting solenoids, the stray magnetic field of the source in addition to the DPI scheme provides focusing against the space charge blow-up of the beam. A combined extraction/matching system has been designed for a high performance ECR ion source injecting into an RFQ, allowing a total beam current of 10 mA from the ion source for the production of highly charged (238)U(40+) (1.33 mA) to be injected at an ion source voltage of 60 kV. In this design, the features of IGUN have been used to take into account the rf-focusing of an RFQ channel (without modulation), the electrostatic field between ion source extraction and the RFQ vanes, the magnetic stray field of the ECR superconducting solenoid, and the defocusing space charge of an ion beam. The stray magnetic field is shown to be critical in the case of a matched beam.

  11. The direct injection of intense ion beams from a high field electron cyclotron resonance ion source into a radio frequency quadrupole

    Energy Technology Data Exchange (ETDEWEB)

    Rodrigues, G., E-mail: gerosro@gmail.com; Kanjilal, D.; Roy, A. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi (India); Becker, R. [Institut fur Angewandte Physik der Universitaet, D-60054 Frankfurt/M (Germany); Hamm, R. W. [R and M Technical Enterprises, Inc., 4725 Arlene Place, Pleasanton, California 94566 (United States); Baskaran, R. [Indira Gandhi Centre for Atomic Research, Kalpakkam, Tamilnadu (India)

    2014-02-15

    The ion current achievable from high intensity ECR sources for highly charged ions is limited by the high space charge. This makes classical extraction systems for the transport and subsequent matching to a radio frequency quadrupole (RFQ) accelerator less efficient. The direct plasma injection (DPI) method developed originally for the laser ion source avoids these problems and uses the combined focusing of the gap between the ion source and the RFQ vanes (or rods) and the focusing of the rf fields from the RFQ penetrating into this gap. For high performance ECR sources that use superconducting solenoids, the stray magnetic field of the source in addition to the DPI scheme provides focusing against the space charge blow-up of the beam. A combined extraction/matching system has been designed for a high performance ECR ion source injecting into an RFQ, allowing a total beam current of 10 mA from the ion source for the production of highly charged {sup 238}U{sup 40+} (1.33 mA) to be injected at an ion source voltage of 60 kV. In this design, the features of IGUN have been used to take into account the rf-focusing of an RFQ channel (without modulation), the electrostatic field between ion source extraction and the RFQ vanes, the magnetic stray field of the ECR superconducting solenoid, and the defocusing space charge of an ion beam. The stray magnetic field is shown to be critical in the case of a matched beam.

  12. The direct injection of intense ion beams from a high field electron cyclotron resonance ion source into a radio frequency quadrupole

    Science.gov (United States)

    Rodrigues, G.; Becker, R.; Hamm, R. W.; Baskaran, R.; Kanjilal, D.; Roy, A.

    2014-02-01

    The ion current achievable from high intensity ECR sources for highly charged ions is limited by the high space charge. This makes classical extraction systems for the transport and subsequent matching to a radio frequency quadrupole (RFQ) accelerator less efficient. The direct plasma injection (DPI) method developed originally for the laser ion source avoids these problems and uses the combined focusing of the gap between the ion source and the RFQ vanes (or rods) and the focusing of the rf fields from the RFQ penetrating into this gap. For high performance ECR sources that use superconducting solenoids, the stray magnetic field of the source in addition to the DPI scheme provides focusing against the space charge blow-up of the beam. A combined extraction/matching system has been designed for a high performance ECR ion source injecting into an RFQ, allowing a total beam current of 10 mA from the ion source for the production of highly charged 238U40+ (1.33 mA) to be injected at an ion source voltage of 60 kV. In this design, the features of IGUN have been used to take into account the rf-focusing of an RFQ channel (without modulation), the electrostatic field between ion source extraction and the RFQ vanes, the magnetic stray field of the ECR superconducting solenoid, and the defocusing space charge of an ion beam. The stray magnetic field is shown to be critical in the case of a matched beam.

  13. Electron Injection Enhancement by Diamond-Like Carbon Film in Polymer Electroluminescence Devices%聚合物电致发光器件中用类金刚石碳膜增强电子注入

    Institute of Scientific and Technical Information of China (English)

    李宏建; 闫玲玲; 黄伯云; 易丹青; 胡锦; 何英旋; 彭景翠

    2006-01-01

    A diamond-like carbon (DLC) film is deposited as an electron injection layer between the polymer light-emitting layer (MEH-PPV) and aluminum (Al) cathode electrode in polymer electroluminescence devices (PLEDs) using a radio frequency plasma deposition system. The source material of the DLC is n-butylamine. The devices consist of indium tin oxide (ITO)/MEH-PPV/DLC/Al. Electron injection properties are investigated through I-V characteristics, and the mechanism of electron injection enhancement due to a thin DLC layer has been studied. It is found that: (1) a DLC layer thinner than 1. 0nm leads to a higher turn-on voltage and decreased electroluminescent (EL) efficiency; (2) a 5.0nm DLC layer significantly enhances the electron injection and re sults in the lowest turn-on voltage and the highest EL efficiency; (3) DLC layer that exceeds 5.0nm results in poor device performance; and(4) EL emission can hardly be detected when the layer exceeds 10.0nm. The properties ofITO/MEH-PPV/DLC/Al and ITO/MEH-PPV/LiF/Al are investigated comparatively.%用正丁胺作碳源,采用射频辉光等离子系统制备类金刚石碳膜(DLC),沉积在聚合物发光器件中的发光层(MEH-PPV)和铝(Al)阴极间作电子注入层.制备了结构为ITO/MEH-PPV/DLC/Al的不同DLC厚度的器件,测量了器件的I-V特性、亮度及效率,研究了DLC层对器件电子注入性能影响的机制.结果表明:当DLC厚度小于1.0nm时,其器件有较ITO/MEH-PPV/Al高的启动电压和低的发光效率;当DLC厚度在1.0~5.0nm之间时,器件的性能随着DLC厚度增加而变好;当DLC厚度为5.0nm时,器件具有最低的启动电压与最高的发光效率;当DLC厚度继续增加时,器件的性能随着DLC厚度增加而变差.并对ITO/MEH-PPV/DLC/Al和ITO/MEH-PPV/LiF/Al的器件性能进行了比较研究.

  14. Development of a Sequencial Port Injection,Fully Electronically Controlled Gas/Diesel Dual Fuel Engine%气口顺序喷射、稀燃、全电控柴油/天然气双燃料发动机的研究

    Institute of Scientific and Technical Information of China (English)

    苏万华; 林志强; 汪洋; 谢辉; 王江; 裴毅强; 费向阳; 刘文胜; 李红珍; 王根生

    2001-01-01

    采用气口顺序喷射、稀燃、全电控柴油/天然气双燃料发动机方案,对斯太尔WD615.64增压非中冷柴油机进行了改装。试验结果表明,改装后的发动机NOx、颗粒和NMHC排放均达到了欧Ⅱ排放指标。CO和HC(含甲烷)可以通过后处理解决。%A brief review of dual fuel engine technology is given in thispaper from the point of view of technology and market in China.A sequencial port injection,lean burn,fully electronically controlled dual fuel engine was proven to be the most suitable solution to the market requirement——clean and economical.It is also a important advantage in China that the engine could operate either on CNG or on 100% diesel fuel when gas supply is interrupted.Optimization of combustion process for the purpose of low emissions and high fuel economy was carefully conducted by calibration of natural compressed gas injection quantity and timing and quantity of diesel fuel injection at all operating condtions.The effects of air/gas ratio λ on NOx,PM,THC and CO were given and analyzed.

  15. Chronic changes in cerebrospinal fluid pathways produced by subarachnoid kaolin injection and experimental spinal cord trauma in the rabbit: their relationship with the development of spinal deformity. An electron microscopic study and magnetic resonance imaging evaluation.

    Science.gov (United States)

    Turgut, Mehmet; Cullu, Emre; Uysal, Ayşegül; Yurtseven, Mine Ertem; Alparslan, Bülent

    2005-10-01

    Post-traumatic cystic changes in cerebrospinal fluid (CSF) pathways such as ventriculomegaly and/or hydrosyringomyelia are not uncommon, but their characteristics have not yet been fully clarified. This study was designed to investigate the alterations affecting the CSF pathways in rabbits at a late stage, and to clarify the relationship between these changes and the development of spinal deformity. In this study, a total of 60 New Zealand white rabbits were used and they were segregated into four different groups of 15 animals each: sham-operation group, kaolin group, and kaolin plus mild trauma group and kaolin plus severe trauma group. The animals were subjected to radiological investigation using direct X-ray study and magnetic resonance imaging (MRI) after 4 months. The thoracic spinal cords of the animals were dissected after intracardiac perfusion-fixation with 10% formalin for light microscopy and 2.5% glutaraldehyde for transmission electron microscopic study. Following the sectioning and staining procedures, the histological characteristics of the spinal cords were evaluated with light microscopy and transmission electron microscopy. A spinal deformity developed in 90% in rabbits in both kaolin injection group and spinal trauma groups. MRI revealed generalized dilatation of the ventricular system and the central canal of the spinal cord after the kaolin injection with/without trauma in this study. Gross morphologic examination showed some enlargement of entire CSF pathways in these groups. All animals with central canal dilatation had mild or severe scoliotic and kyphotic deformities. In a light microscopic study, a denuded ependymal line and multicyst formations in periependymal areas were found in both kaolin injection and spinal trauma groups. Ultrastructurally, an apical flattening of the ependyma, microcysts in the ependymal cells, axonal degeneration, demyelination, and loss of ependymal cells adjacent mild spongy were found in the spinal cords of

  16. Modulation of Electron Injection Dynamics of Ru-Based Dye/TiO2 System in the Presence of Three Different Organic Solvents: Role of Solvent Dipole Moment and Donor Number.

    Science.gov (United States)

    Mahanta, Subrata; Matsuzaki, Hiroyuki; Murakami, Takurou N; Katoh, Ryuzi; Matsumoto, Hajime; Furube, Akihiro

    2015-06-08

    In the present work, femtosecond transient absorption spectroscopy (fs-TAS) has been employed to investigate the electron injection efficiency (EIE) both from the singlet and triplet excited states of a well-known ruthenium dye (N719) to the conduction band (CB) of nanostructured TiO(2) in presence of three different organic solvents [γ-butylactone (GBL), 3-methoxypropionitrile (MPN), and dimethylformamide (DMF)] with different donor numbers (DNs) and dipole moments (DMs). The DM and DN of a solvent modulates the CB edge energy of TiO(2), and this effect reflects well in the fs-TAS results, which shows an EIE trend following the order GBL≥MPN≫DMF, that is, highest in GBL and lowest in DMF solvent environments. Fs-TAS results indicate a lower contribution of electron injection from both the singlet and triplet states in DMF, for which the dominant adsorption of DMF molecules on the TiO(2) surface seems to play an important role in the mechanism.

  17. Comparison of the Schaake and Benson Etches to Delineate Dislocations in HgCdTe Layers

    Science.gov (United States)

    Farrell, S.; Rao, Mulpuri V.; Brill, G.; Chen, Y.; Wijewarnasuriya, P.; Dhar, N.; Benson, J. D.; Harris, K.

    2013-11-01

    The morphology and classification of etch pits in molecular beam epitaxy-grown (211) HgCdTe/CdTe/Si layers were investigated using the Schaake and Benson etch pit density (EPD) etches. The two EPD etches were compared and shown to have a 1:1 correlation in the etch pits that were produced. Close examination of the shape of the etch pits via scanning electron microscopy shows that several distinguishable classifications of etch pits are revealed using both etches. Samples subjected to thermal cycle annealing (TCA) treatment show a nonuniform reduction in etch pit populations according to the classification defined in this study. In particular, a class of etch pits called "fish shaped" are completely absent after TCA and can account for up to one-third of the total reduction in EPD.

  18. Quantitative damage depth profiles in arsenic implanted HgCdTe

    Energy Technology Data Exchange (ETDEWEB)

    Lobre, C., E-mail: clement.lobre@cea.fr [CEA-Leti, MINATEC, 17 rue des Martyrs, 38054 Grenoble cedex 9 (France); Jalabert, D. [CEA-INAC/UJF-Grenoble 1 UMR-E, MINATEC, 17 rue des Martyrs, 38054 Grenoble cedex 9 (France); Vickridge, I.; Briand, E.; Benzeggouta, D. [Institut des NanoSciences de Paris, UMR 7588 du CNRS, Universite de Pierre et Marie Curie, Paris (France); Mollard, L. [CEA-Leti, MINATEC, 17 rue des Martyrs, 38054 Grenoble cedex 9 (France); Jouneau, P.H. [CEA-INAC/UJF-Grenoble 1 UMR-E, MINATEC, 17 rue des Martyrs, 38054 Grenoble cedex 9 (France); Ballet, P. [CEA-Leti, MINATEC, 17 rue des Martyrs, 38054 Grenoble cedex 9 (France)

    2013-10-15

    Rutherford backscattering experiments under channeling conditions (RBS-c) have been carried out on Hg{sub 0.77}Cd{sub 0.23}Te (MCT) layers implanted with arsenic. Accurate damage profiles have been extracted through a simple formalism for implanted and annealed layers. Quantitative damage profiles are correlated with structural defects observed by bright-field scanning transmission electron microscopy (BF-STEM) and chemical composition measured by secondary ion mass spectrometry (SIMS). Evolution of damage for increasing ion implantation fluence has been investigated by these three complementary techniques. Evidence is found of irradiation induced annealing during implantation. A fast damage recovery has been observed for post-implantation thermal anneals. In the case of an implanted layer annealed during 1 h, the damage profile, associated with arsenic concentration measurements, indicates the presence of complexes involving arsenic.

  19. Characterization of the Microstructure of HgCdTe with p-Type Doping

    Science.gov (United States)

    Lobre, C.; Jouneau, P.-H.; Mollard, L.; Ballet, P.

    2014-08-01

    Nitrogen, phosphorus, arsenic, and antimony ions were implanted in Hg0.3Cd0.7Te (MCT) layers under the same implantation conditions. An identical annealing process was then applied to these layers to eradicate implantation damage and to activate the impurities. Implantation damage was investigated by direct visualization, by use of bright-field scanning transmission electron microscopy (BF-STEM). Secondary-ion mass spectrometry was used to investigate impurity diffusion on annealing. The combination of these two techniques revealed the significant effect of structural implantation damage on the diffusion process. Annealed layers were then investigated by high-resolution STEM imaging and energy-dispersive x-ray spectroscopy in STEM (STEM-EDX). This approach enables direct visualization and, therefore, further description of arsenic and antimony-rich nanocrystals.

  20. Mechanisms of electron injection from retinoic acid and carotenoic acids to TiO2 nanoparticles and charge recombination via the T1 state as determined by subpicosecond to microsecond time-resolved absorption spectroscopy: dependence on the conjugation length.

    Science.gov (United States)

    Xiang, Junfeng; Rondonuwu, Ferdy S; Kakitani, Yoshinori; Fujii, Ritsuko; Watanabe, Yasutaka; Koyama, Yasushi; Nagae, Hiroyoshi; Yamano, Yumiko; Ito, Masayoshi

    2005-09-15

    To examine the mechanisms of electron injection to TiO2 in retinoic acid (RA) and carotenoic acids (CAs), including RA5, CA6, CA7, CA8, CA9, and CA11 having the number of conjugated double bonds n = 5, 6, 7, 8, 9, and 11, respectively, their subpicosecond time-resolved absorption spectra were recorded free in solution and bound to TiO2 nanoparticles in suspension. The time-resolved spectra were analyzed by singular-value decomposition (SVD) followed by global fitting based on an energy diagram consisting of the 3A(g)(-), 1B(u)(-), 1B(u)(+), and 2A(g)(-) singlet excited states, whose energies had been determined as functions of 1/(2n + 1) by the use of carotenoids with n = 9-13. It was found that electron injection took place from both the 1B(u)(+) and 2A(g)(-) states in RA5, CA6, CA7, and CA8, whereas only from the 1B(u)(+) state in CA9 and CA11. The electron-injection efficiencies were determined, by the use of the relevant time constants determined by the SVD and global-fitting analyses, to be in the following order: RA5 approximately CA6 CA8 > CA9 > CA11. To determine the mechanism of charge recombination via the T(1) state, submicrosecond time-resolved absorption spectra of RA5, CA6, CA7, and CA8 bound to TiO2 nanoparticles in suspension were recorded. The SVD and global-fitting analyses lead us to a new scheme, which includes the formation of the D(0)(*+) - T(1) complex followed by transformation to both the D(0)(*+) and T(1) states. On the other hand, their one-electron oxidation potentials were determined, and their singlet and triplet levels were scaled to the conduction band edge (CBE) of TiO2. The T(1) level was lower than, but closest to, the CBE in RA5, and it became lower in the order RA5, CA6, CA7, and CA8. Consistent with the energy gap between the CBE and the T(1) levels, the generation of the T(1) state (or in other words, charge recombination) decreased in the order RA5 > CA6 > CA7 > CA8.

  1. Non-inductive plasmas studies by injection of electron cyclotron waves in the Tore Supra tokamak; Etudes des plasmas non-inductifs par injection d'ondes a la frequence cyclotronique electronique dans le tokamak Tore Supra

    Energy Technology Data Exchange (ETDEWEB)

    Turco, F

    2008-06-15

    In this work we addressed the issue of the phenomena typical of the non-inductive discharges in the Tore Supra tokamak, probed by means of localised perturbations of the current density profile, performed by electron cyclotron (EC) waves. In order to correctly utilize the current density profile, reconstructed by means of the CRONOS code we performed a sensitivity study on the code results. Concerning the MHD regimes we have shown that a dynamic evolution of the safety factor q which tends to shrink its profile appears to be the cause of the triggering of such regimes. From the operational point of view, deposing the EC current, generated in the same direction of the plasma current, outside the q{sub min} position results hazardous because it causes a rise in q{sub 0} and consequently the shrinking of the q profile which triggers the MHD regimes. On the contrary, the EC counter-current scans show that a very central deposition ({rho}(ECCD) < 0.1) lead almost certainly to an MHD regime, while a more external countercurrent generation has generally the quality of creating internal transport barriers (ITBs). The phenomenon of non-linear temperature oscillations (the O-regime) has also been addressed, to provide an analytical description as well as from the experimental point of view, concerning the triggering and canceling of the oscillating phases. By constructing a non-linear predator-prey system with noise, solved on two regions of space coupled by a diffusion term, we could reproduce the experimental temperature oscillations: this study allowed us to confirm that the oscillatory phenomenon is the manifestation of a Lotka-Volterra like coupling between j and T{sub e}. The experimental analysis led to the identification of the mechanism at the origin of the triggering and canceling of the O-regime in presence of a perturbation in a specific shape of magnetic shear perturbation. These results have been reproduced by the simulations preformed with the integrated

  2. Evaluation of HgCdTe on GaAs Grown by Molecular Beam Epitaxy for High-Operating-Temperature Infrared Detector Applications

    Science.gov (United States)

    Wenisch, J.; Schirmacher, W.; Wollrab, R.; Eich, D.; Hanna, S.; Breiter, R.; Lutz, H.; Figgemeier, H.

    2015-09-01

    Molecular beam epitaxy (MBE) growth of HgCdTe (MCT) on alternative substrates enables production of both cheaper and more versatile (third-generation) infrared (IR) detectors. After rapid progress in the development of MBE-grown MCT on GaAs in recent years, the question of whether the considerable benefits of this material system are also applicable to high-operating-temperature (HOT) applications demands attention. In this paper, we present a mid-wavelength-IR 640 × 512 pixel, 15- μm-pitch focal-plane array with operability of 99.71% at operating temperature of 120 K and low dark current density. In the second part of the paper, MBE growth of short-wavelength IR material with Cd fraction of up to 0.8 is investigated as the basis for future evaluation of the material for low-light-level imaging HOT applications.

  3. Reactive ion etching (RIE) induced p- to n-type conversion in extrinsically doped p-type HgCdTe

    Energy Technology Data Exchange (ETDEWEB)

    Musca, C.A.; Smith, E.P.G.; Siliquini, J.F.; Dell, J.M.; Antoszewski, J.; Faraone, L. [Univ. of Western Australia, Nedlands, Western Australia (Australia). Dept. of Electrical and Electronic Engineering; Piotrowski, J. [Vigo System Ltd., Warsaw (Poland)

    1998-12-31

    Mercury annealing of reactive ion etching (RIE) induced p- to n-type conversion in extrinsically doped p-type epitaxial layers of HgCdTe (x = 0.31) has been used to reconvert n-type conversion sustained during RIE processing. For the RIE processing conditions used (400 mT, CH{sub 4}/H{sub 2}, 90 W) p- to n-type conversion was observed using laser beam induced current (LBIC) measurements. After a sealed tube mercury anneal at 200 C for 17 hours, LBIC measurements clearly indicated no n-type converted region remained. Subsequent Hall measurements confirmed that the material consisted of a p-type layer, with electrical properties equivalent to that of the initial as-grown wafer (N{sub A}-N{sub D} = 2 {times} 10{sup 16} cm{sup {minus}3}, {mu} = 350 cm{sup 2}.V{sup {minus}1}.s{sup {minus}1}).

  4. Latest developments of 10μm pitch HgCdTe diode array from the legacy to the extrinsic technology

    Science.gov (United States)

    Péré-Laperne, Nicolas; Berthoz, Jocelyn; Taalat, Rachid; Rubaldo, Laurent; Kerlain, Alexandre; Carrère, Emmanuel; Dargent, Loïc.

    2016-05-01

    Sofradir recently presented Daphnis, its latest 10 μm pitch product family. Both Daphnis XGA and HD720 are 10μm pitch mid-wave infrared focal plane array. Development of small pixel pitch is opening the way to very compact products with a high spatial resolution. This new product is taking part in the HOT technology competition allowing reductions in size, weight and power of the overall package. This paper presents the recent developments achieved at Sofradir to make the 10μm pitch HgCdTe focal plane array based on the legacy technology. Electrical and electro-optical characterizations are presented to define the appropriate design of 10μm pitch diode array. The technological tradeoffs are explained to lower the dark current, to keep high quantum efficiency with a high operability above 110K, F/4. Also, Sofradir recently achieved outstanding Modulation Transfer Function (MTF) demonstration at this pixel pitch, which clearly demonstrates the benefit to users of adopting 10μm pixel pitch focal plane array based detectors. Furthermore, the HgCdTe technology has demonstrated an increase of the operating temperature, plus 40K, moving from the legacy to the P-on-n one at a 15μm pitch in mid-wave band. The first realizations using the extrinsic P-on-n technology and the characterizations of diodes with a 10μm pitch neighborhood will be presented in both mid-wave and long-wave bands.

  5. Atmospheric Diffusion Loss of Radiation Belt Trapped Electrons Injected by High Altitude Nuclear Detonation%高空核爆炸注入辐射带电子的大气扩散损失

    Institute of Scientific and Technical Information of China (English)

    牛胜利; 罗旭东; 王建国; 乔登江

    2011-01-01

    With Fokerer-Plank equation of pitch-angle diffusion, a numerical method for atmospheric diffusion loss of radiation belt trapped electrons is shown. Flux and energy spectrum are calculated as atmospheric scattering of fission β spectrum electrons injected in radiation belt by high altitude nuclear detonation. Diffusion due to atmospheric scattering is remarkable as L < 1. 3. Low energy electrons are removed more rapidly than those with high energy. Electron flux decays rapidly at an initial phase and then decays gradually aa an exponential function of time.%利用辐射带电子大气倾角扩散的福克-普朗克方程,通过推导与拟合处理扩散系数表征式,构造二阶精度有限差分格式,给出辐射带捕获电子大气扩散损失的数值计算方法.计算高空核爆炸裂变β谱电子注入辐射带后在不同L壳上的通量损失和能谱变化,结果表明,当L<1.3时,大气作用引起的扩散损失效应明显,低能电子比高能电子消失要快,电子通量初始阶段衰减很快,随后逐渐近似成时间指数函数形式衰减.

  6. A 4K x 4K HgCdTe astronomical camera enabled by the JWST NIR detector development program

    Science.gov (United States)

    Hall, Donald N. B.; Luppino, Gerard; Hodapp, Klaus W.; Garnett, James D.; Loose, Markus; Zandian, Majid

    2004-09-01

    The ambitious science goals of the James Webb Space Telescope (JWST) have driven spectacular advances in λco ~ 5um detector technology over the past five years. This paper reviews both the UH/RSC team"s Phase A development and evaluation of 2Kx2K arrays exceeding the detector requirements for JWST"s near infrared instruments and also the hardware integration of these into a 4Kx4K (16Mpxl) close packed mosaic focal plane array housed in an Ultra Low Background test facility. Both individual first generation 2Kx2K SCA"s and 4Kx4K mosaic focal planes have been extensively characterized in the laboratory and, since September 2003, a NIR camera utilizing the 4Kx4K mosaic focal plane has been in use for nearly 100 nights at the UH 2.2 m telescope on Mauna Kea. Typical test results for the first generation 2Kx2K arrays and their integration into 4Kx4K mosaic focal planes are reported. Demonstration of the design concepts and both array and mosaic focal plane performance in actual hardware, as described here, has provided the foundation for design iterations leading to later generations of 2Kx2K arrays and 4Kx4K mosaic focal planes. Four major technology developments leading to first generation hardware demonstrations of both 2Kx2K SCA"s and a 4Kx4K mosaic FPA are reviewed. These are: 1) improvement in test equipment and procedures to characterize the detectors against JWST requirements and goals, primarily at 37K but with the capability to test from 30K to 100K; 2) optimization of λc ~ 5 um MBE HgCdTe material on a CZT substrate for low dark current (goal of 0.003 e-/sec at 37K) with high quantum efficiency, low cross-talk and greatly reduced image persistence; 3) development of the 2Kx2K HAWAII-2RG multiplexer designed specifically to take full advantage of these detector characteristics for a wide range of astronomical applications (and fully compatible with an ASIC controller developed under the JWST Instrument Technology Development initiative) and 4) development of

  7. Ventajas del uso de la inyección electrónica en Cuba para vehículos diesel ligeros. // Advantages of injection electronic control systems for cars with Diesel engines.

    Directory of Open Access Journals (Sweden)

    J. L. Reyes González

    2002-05-01

    Full Text Available Se presenta un análisis sobre las ventajas que brinda el control electrónico en la inyección Diesel en vehículos ligeros enfunción de las condiciones de clima y explotación en nuestro país. En nuestro trabajo se hace un análisis experimental y sedemuestra la influencia notable que presenta esta novedosa técnica en la contaminación ambiental y el consumo decombustible.Palabras claves: Inyección Diesel, control electrónico, contaminación ambiental, gases de escape.______________________________________________________________________Abstract.This paper deals with the advantages of the electronic control systems in Diesel engines in cars, taking intoconsideration the weather and exploitation conditions in our country. The experimental analysis shows the influence ofelectronic injections systems in the fuel consumption and the environmental impact of the exhaust gases.Key words: Diesel inyection, electronic control, ambiental pollution, exhaust gases.

  8. Ventajas del uso de la inyección electrónica para vehículos diesel pesados en las condiciones de Cuba. // Advantages of electronic injection for diesel engines in heavy duty equipment.

    Directory of Open Access Journals (Sweden)

    J. Luis Reyes González

    2002-09-01

    Full Text Available Tomando en cuenta la importancia que tiene para Cuba el obtener una eficiencia energética elevada en los motores decombustión interna, al igual que el control de las emanaciones de gases tóxicos en los mismos, se realizó este trabajo dondese demuestran las ventajas tanto en el orden económico como ecológico de los motores diesel con mando electrónico paraequipos pesados empleados en la transportación de carga por camiones en la empresa Cubalse.Por medio de métodos experimentales y estadísticos, se obtuvo el consumo de combustible y la humosidad en motores coninyección electrónica (Detroit y en motores que utilizan los métodos tradicionales (Cummins. Los rresultadosdemostraron la superioridad en ambos aspectos de los motores con inyección electrónica.Se realizó una valoración del tiempo de amortización de la inversión inicial necesaria para utilizar en el parque existenteesta novedosa técnica de la inyección electrónica.Palabras claves: Eficiencia energética, inyección electrónica, consumo de combustible, motores de combustióninterna.__________________________________________________________________Abstract.Taking into consideration the importance of achieving a high efficiency in the internal combustion engines and emissioncontrol of the exhaust gases, this paper deals with economical and environmental advantages of the electronic controlleddiesel engines in heavy-duty trucks, which are used by Cubalse in the transportation. The fuel consumption and the sootemission in Detroit motors (with electronic injection system and Cummins (with traditional system, were studied usingstatistic and experimental methods, and the Detroit proved to be superior in both parameters. The pay back time for theinvestment needed to change the systems of all the existent trucks were calculatedKey words: Energetic efficiency, electronic injection, fuel consumption, internal combustion engine.

  9. Design of Control Circuits of Electronic Fuel Injection for Diesel Spray Characteristics%柴油机喷雾特性的电喷控制电路设计

    Institute of Scientific and Technical Information of China (English)

    齐放; 张乐超; 许沧粟

    2011-01-01

    介绍了一种柴油机电控喷油器喷射开启控制系统.为实现柴油机电控喷油器的开启、持续喷油、关闭功能,应用STC12系列单片机构成电控喷油器的控制系统.开启时为使喷油器开启迅速,应用单周期控制技术的IR1150S芯片,产生高压为112 V的高压电源为喷油器供电.试验结果表明,开发的柴油机电控喷油嚣控制系统符合X光相衬成像技术研究柴油机喷雾雾化机理的要求,喷油开启迅速、喷油持续稳定、关闭干脆.本系统根据设定可实现电控喷油器的单次及多次连续开启,进一步可以推广应用于柴油机喷油器相关环节教学实验中.%This paper described a control system of diesel electronic control fuel injector, which can achieve the opening, continuous injection and closing of electronic fuel injector with STC12 MCU control system. For the quick opening,one cycle control technique IR1150S chip was supplied to produce 1 12 V high voltages for injector. The experimental results show that the electronic controlled spray system can meet the requirements of diesel spray atomization research with X-ray phase contrast imaging technology. For the control system, the spray starts rapidly, injects steadily and closes immediately- According to the device sellings,this system can achieve single and multiple opening. This system also can be used in the. Diesel nozzle experimental teaching.

  10. Penicillin G Procaine Injection

    Science.gov (United States)

    Penicillin G procaine injection is used to treat certain infections caused by bacteria. Penicillin G procaine injection should not be used to treat ... in the treatment of certain serious infections. Penicillin G procaine injection is in a class of medications ...

  11. Plasma Injection Schemes for Laser-Plasma Accelerators

    OpenAIRE

    J. Faure

    2017-01-01

    Plasma injection schemes are crucial for producing high-quality electron beams in laser-plasma accelerators. This article introduces the general concepts of plasma injection. First, a Hamiltonian model for particle trapping and acceleration in plasma waves is introduced; ionization injection and colliding-pulse injection are described in the framework of this Hamiltonian model. We then proceed to consider injection in plasma density gradients.

  12. Study of electronic heat transport in plasma through diagnosis based on modulated electron cyclotron heating; Etudes de transport de la chaleur electronique par injection modulee d'ondes a la frequence cyclotronique electronique

    Energy Technology Data Exchange (ETDEWEB)

    Clemencon, A.; Guivarch, C

    2003-07-01

    In order to make nuclear fusion energetically profitable, it is crucial to heat and confine the plasma efficiently. Studying the behavior of the heat diffusion coefficient is a key issue in this matter. The use of modulated electron cyclotron heating as a diagnostic has suggested the existence of a transport barrier under certain plasma conditions. We have determined the solution to the heat transport equation, for several heat diffusion coefficient profiles. By comparing the analytical solutions with experimental data; we are able to study the heat diffusion coefficient profile. Thus, in certain experiments, we can confirm that the heat diffusion coefficient switches from low to high values at the radius where the electron cyclotron heat deposition is made. (authors)

  13. Iron Dextran Injection

    Science.gov (United States)

    ... allergic to iron dextran injection; any other iron injections such as ferric carboxymaltose (Injectafer), ferumoxytol (Feraheme), iron sucrose (Venofer), or sodium ferric gluconate (Ferrlecit);any other ...

  14. Opto-electronic Properties of Mid-Wavelength: n Type II InAs/InAs1- x Sb x and Hg1- x Cd x Te

    Science.gov (United States)

    De Wames, Roger E.

    2016-09-01

    There is significant interest in mid-wavelength type II strained layer superlattices (SLSs) and HgCdTe material systems for background limited performance, operating at significantly higher temperature, T ≥ 150 K, than InSb, T ≈ 80-90 K. A precise knowledge of the electronic and optical properties of these materials is desirable since they determine detector performance and are needed for input parameters in self-consistent physics-based predictive models. Recently, data on the optical absorption coefficient, and the hole minority carrier lifetime has become available, suggesting that in the extrinsic region the limiting recombination processes in mid-wavelength type II Ga-free SLSs are radiative and Shockley-Read-Hall (SRH). These findings provide the opportunity for comparisons with mid-wavelength HgCdTe. The comparisons show that the radiative recombination coefficients are similar; however, the SRH lifetime limited to 9 μs for the SLS implies that the dark current density is expected to be limited by bulk generation-recombination (G-R) SRH processes for temperatures below 160 K; hence requiring heterojunction designs to suppress the G-R dark currents and be diffusion limited. Mid-wavelength infrared HgCdTe photodiodes are shallow p+n photovoltaic devices and because of the very long SRH hole lifetime are diffusion radiatively limited photodiodes down to 80 K.

  15. Sipuleucel-T Injection

    Science.gov (United States)

    Sipuleucel-T injection is used to treat certain types of advanced prostate cancer. Sipuleucel-T injection is in a class of medications called ... Sipuleucel-T injection comes as a suspension (liquid) to be injected over about 60 minutes into a vein ...

  16. Examination of injection moulded thermoplastic maize starch

    Directory of Open Access Journals (Sweden)

    2007-12-01

    Full Text Available This paper focuses on the effect of the different injection moulding parameters and storing methods on injection moulded thermoplastic maize starch (TPS. The glycerol and water plasticized starch was processed in a twin screw extruder and then with an injection moulding machine to produce TPS dumbbell specimens. Different injection moulding set-ups and storing conditions were used to analyse the effects on the properties of thermoplastic starch. Investigated parameters were injection moulding pressure, holding pressure, and for the storage: storage at 50% relative humidity, and under ambient conditions. After processing the mechanical and shrinkage properties of the manufactured TPS were determined as a function of the ageing time. While conditioning, the characteristics of the TPS changed from a soft material to a rigid material. Although this main behaviour remained, the different injection moulding parameters changed the characteristics of TPS. Scanning electron microscope observations revealed the changes in the material on ageing.

  17. Long-term outcomes in patients with schizophrenia treated with risperidone long-acting injection or oral antipsychotics in Spain: results from the electronic Schizophrenia Treatment Adherence Registry (e-STAR).

    Science.gov (United States)

    Olivares, J M; Rodriguez-Morales, A; Diels, J; Povey, M; Jacobs, A; Zhao, Z; Lam, A; Villalobos Vega, J C; Cuéllar, J Alonso; de Castro, F J Alberca; Quintero, C Morillo-Velarde; Martíin, J F Román; Domínguez, P Tabares; Ojeda, J L Prados; Cortés, S Sanz; Cala, F I Mata; Marín, C Gutiérrez; Castro, L Moyano; Duaso, M A Haza; Albarracín, J Requena; Vergara, G Narbona; Benítez, A Fernández; Cleries, F Mayoral; Pérez-Brian, J M García-Herrera; Aragón, A Bordallo; Navarro, J C Rodríguez; Biedma, J A Algarra; de Pedro, R Bravo; González, J F Delgado; López, M E Jaén; Moreno, H Díaz; López, J A Soto; Rodríguez, E Ojeda; de Hoyos, C Martínez; Sacristán, M Pardilla; Martín, M D Molina; Ballesteros, E Martín; Rodríguez, P A Sopelana; Menéndez, L Fernández; Rivas, R Santos; del Pino Cuadrado, P; Lauffer, J Correas; Solano, J J Rodríguez; Martínez, J M Fernández; Solano, F García; Rodríguez, P García-Lamberde; Rodríguez, J A Romero; Cano, T Rodríguez; Fortacin, M Ducaju; Lobeiras, J M Blanco; Sampedro, J M Piñeiro; Bravo, A Pérez; Pellicer, A Fernández; López, M D Alonso; Liste, J Fraga; Fernández, M Riobo; Losada, A Casas; Mendez, R Vazquez-Noguerol; Romero, S Agra; Blanco, J J Blanco; Bonaselt, I Tortajada; Mahia, M C García; del Valle, E Ferrer Gómez; Yañez, P Quiroga; Camarasa, M Gelabert; Alonso, J A Barbado; Mendez, G Florez; Feliz, F Doce; Lamela, M A López; Piñero, M Vega; Alvarado, P Fuentes; Gómez, I López; Martín, P Fadon; Gómez, J L Santos; López, A García; Jiménez, A Rodríguez; Nafs, A Escudero; Barquero, N Casas; Ortiz, R Fernández-Villamor; Noguera, J L Velez; Carrasco, P Ruiz; Muñoz, J Martín; Palma, M Masegoza; Hortelano, C Marín; Bonome, L Sánchez; Sevilla, J Sánchez; Juan, J M Mongil San; Ramos, J M García; Muñoz, J L Vallejo; Guisasola, J Elorza; Vazquez, L Santamaria; Guerras, F Campo; Nebot, F J Arrufat; Fernández, F J Baron; Nicolau, A L Palomo; Subirats, R Catala; Kidias, M Messays; Navarro, V Fabregat; García, B Frades; del Rosal, F Mejias; de Vicente Muñoz, T; Ballester, J Año; Lieb, P Malabia; Martel, A Delgado; Bea, E Roca; Joaquim, I Grau; Enjuanes, F Boatas; Piñol, M Bañuelos; Carbonell, E Fontova I; Muñoz, R Martín; Giribets, C Argila; Sans, L Albages; Blanco, A Serrano; Felipe, M Arcega; Muñoz, P González; Villanueva, A Pons; Arroyo, M Bernardo; Borri, R Coronas; Fallada, S Miret; Merola, M Celma; Rodon, E Parellada; Palmes, J R Pigem; Martínez, E Pérez; Catala, J Matarredona; Coca, A Sandoval; Ferrandiz, F Pascual; Paya, E Ferrandiz; Caballero, G Iturri; Bonet, A Franco; Figueras, J Fluvia; Pagador, P Moreno; Garibo, M Medina; Camo, V Pérez; Carrillo, C Sanz; Valero, C Pelegrin; Rebollo, F J Caro; García Campayo, J; Sala Ayma, J M Sala; Roig, M Martínez; de Uña Mateos, M A; Bertolin, R García; García, A Martín; Mazo, F Jiménez; Velasco, J L Galvez; Pérez, L Santa Maria; Casado, C Jiménez; Barba, J J Mancheño; Diaz, M Conde; Rubio, J P Alcon; Mandoli, A Soler; Herrero, A Uson; Martínez, A Rodríguez; Serrano, P Salgado; Rodríguez, E Nieto; Montesinos, J Segui; Macia, J Ferragud; Mateos Marcos, A Mateos; Soto, J V Pérez-Fuster; Dumont, M Verdaguer; Pagan, J Parra; Martínez, V Balanza; Santiuste de Pablos, M; Delgado, C Espinosa; Quiles, M D Martínez; López, F J Manzanera; Navarro, P Pozo; Torres, A Micol; Ingles, F J Martínez; Arias-Camison, J M Salmeron; Manzano, J C López; Peña, R Villanueva; Guitarte, G Petersen; Fontecilla, H Blasco; Romero, J Barjau; Gil, R Sanz; Lozano, J Marín; Adanez, L Donaire; Zarranz Herrera-Oria, I; Jiménez, J Pérez; Vaz, F Carrato; García, O Sanz; Anton, C Contreras; Casula, R Reixach; Hernandez, M C Natividad; Escabias, F Teba; Torresano, J Rodríguez; Pérez-Villamil, A Huidobro; Estevez, L; Figuero, M Aragües; Muñoz de Morales, A; Calvin, J L Rodríguez; Criado, M Delgado; Rodríguez, V Molina; Ambrosolio, E Balbo; Madera, P M Holgado; Alfaro, G Ponce; Vidal, M M Rojas; Valtuille, A García; Ruiz, O; Cabornero, G Lucas; Echevarria Martínez de Bujo, M; Mallen, M J Maicas; Puigros, J Santandreu; Martorell, A Liñana; Forteza, A Clar; Arrebola, E Rodríguez; Rodríguez de la Torre, M; Saiz, C G Anton; Bardolet I Casas, C; Linde, E Rodríguez; De Arce Cordon, R; Molina, E M Padial; Carazo, F J Ruiz; Romero, J J Muro; Cano, D Vico; Dorado, M Soria; Velazquez, S Campos; Sánchez, A J Rodríguez; Leon, S Ocio; Sánchez, K Pachas; Benitez, M Henry; Zugarramurai, A Intxausti; Contreras, M A; De la Varga González, M; Marín, P Barreiro; Robina, F Gómez; García, M Sánchez; Pérez, F J Otero; Bros, P Cubero; Gómez, A Carrillo; de Dios Molina Martín, J; Perera, J L Carrasco; Averbach, M C; Perera, J L Carrasco; Palancares, E Goenaga; Gallego de Dios, M T; Rojo, C Fernández; Iglesias, S Sánchez; Merino, M I Rubio; Mestre, N Prieto; Urdaniz, A Pérez; Sánchez, J M Martínez; Seco, R Gordo; Muñoz, J Franco; Agut, M Mateos; Lozano, M L Blanco; Herguedas, F Martín; Pena, A Torcal; García, J Vicente; Martínez, A Varona; Sanz Granado, O Sanz; Fernández, M A Medina; Canseco, J M Moran; López, P A Megia; Martín, M A Franco; Barrio, J A Espina; Ubago, J Giner; Bennassar, M Roca; Díez, J M Olivares; Fleta, J L Hernandez; Fortes, F Porras; López, C Arango; Medina, O; Alvarez, D Figuera; Roca, J M Peña; Valladolid, G Rubio; Tavera, J A Furquet; García-Castrillon Sales, J A; Llordes, I Batalla; Melgarejo, C Anchuistegui; Cañas de la Paz, F; Callol, V Vallés; García, M Bousoño; García, J Bobes; Leal, F J Vaz; Corrales, E Cáceres; Iglesias, E Sánchez; Gómez, M A Carreiras; Serrano, G García; Chillarón, E G Román; Aguado, F J Samino; Castillo, J J Molina; González, A González; Vázquez, J Gallardo; Peralvarez, M Bolivar; Diaz, M Rios; Mesa, M Ybarzabal; Artiles, F J Acosta; Chao, M Ajoy; Mesa, M Ybarzabal; del Rosario Santana, P; Escudero, M A García; Berenguer, M Molla; Llacer, J M Bonete; Berna, J A Juan; Ortiz, J Barragán; Pardell, L Tost; Hernández-Alvarez de Sotomayor, C; Méndez, M R Cejas; Garate, R Cabrera; Múgica, B Díaz; González, M Caballero; Domingo, J Pujol; Navarro, C Sáez; Vera, G Selva; Cuquerella, M A; Monzo, J Lonjedo; Boada, P Cervera; Pérez, M F Martín; Parrado, E Carrasco; Sánchez, J J Yañez; Fernández, J Calvo

    2009-06-01

    The electronic Schizophrenia Treatment Adherence Registry (e-STAR) is a prospective, observational study of patients with schizophrenia designed to evaluate long-term treatment outcomes in routine clinical practice. Parameters were assessed at baseline and at 3 month intervals for 2 years in patients initiated on risperidone long-acting injection (RLAI) (n=1345) or a new oral antipsychotic (AP) (n=277; 35.7% and 36.5% on risperidone and olanzapine, respectively) in Spain. Hospitalization prior to therapy was assessed by a retrospective chart review. At 24 months, treatment retention (81.8% for RLAI versus 63.4% for oral APs, p<0.0001) and reduction in Clinical Global Impression Severity scores (-1.14 for RLAI versus -0.94 for APs, p=0.0165) were significantly higher with RLAI. Compared to the pre-switch period, RLAI patients had greater reductions in the number (reduction of 0.37 stays per patient versus 0.2, p<0.05) and days (18.74 versus 13.02, p<0.01) of hospitalizations at 24 months than oral AP patients. This 2 year, prospective, observational study showed that, compared to oral antipsychotics, RLAI was associated with better treatment retention, greater improvement in clinical symptoms and functioning, and greater reduction in hospital stays and days in hospital in patients with schizophrenia. Improved treatment adherence, increased efficacy and reduced hospitalization with RLAI offer the opportunity of substantial therapeutic improvement in schizophrenia.

  18. On Maximal Injectivity

    Institute of Scientific and Technical Information of China (English)

    Ming Yi WANG; Guo ZHAO

    2005-01-01

    A right R-module E over a ring R is said to be maximally injective in case for any maximal right ideal m of R, every R-homomorphism f : m → E can be extended to an R-homomorphism f' : R → E. In this paper, we first construct an example to show that maximal injectivity is a proper generalization of injectivity. Then we prove that any right R-module over a left perfect ring R is maximally injective if and only if it is injective. We also give a partial affirmative answer to Faith's conjecture by further investigating the property of maximally injective rings. Finally, we get an approximation to Faith's conjecture, which asserts that every injective right R-module over any left perfect right self-injective ring R is the injective hull of a projective submodule.

  19. Fast sub-electron detectors review for interferometry

    Science.gov (United States)

    Feautrier, Philippe; Gach, Jean-Luc; Bério, Philippe

    2016-08-01

    New disruptive technologies are now emerging for detectors dedicated to interferometry. The detectors needed for this kind of applications need antonymic characteristics: the detector noise must be very low, especially when the signal is dispersed but at the same time must also sample the fast temporal characteristics of the signal. This paper describes the new fast low noise technologies that have been recently developed for interferometry and adaptive optics. The first technology is the Avalanche PhotoDiode (APD) infrared arrays made of HgCdTe. In this paper are presented the two programs that have been developed in that field: the Selex Saphira 320x256 [1] and the 320x255 RAPID detectors developed by Sofradir/CEA LETI in France [2], [3], [4]. Status of these two programs and future developments are presented. Sub-electron noise can now be achieved in the infrared using this technology. The exceptional characteristics of HgCdTe APDs are due to a nearly exclusive impaction ionization of the electrons, and this is why these devices have been called "electrons avalanche photodiodes" or e-APDs. These characteristics have inspired a large effort in developing focal plan arrays using HgCdTe APDs for low photon number applications such as active imaging in gated mode (2D) and/or with direct time of flight detection (3D imaging) and, more recently, passive imaging for infrared wave front correction and fringe tracking in astronomical observations. In addition, a commercial camera solution called C-RED, based on Selex Saphira and commercialized by First Light Imaging [5], is presented here. Some groups are also working with instruments in the visible. In that case, another disruptive technology is showing outstanding performances: the Electron Multiplying CCDs (EMCCD) developed mainly by e2v technologies in UK. The OCAM2 camera, commercialized by First Light Imaging [5], uses the 240x240 EMMCD from e2v and is successfully implemented on the VEGA instrument on the CHARA

  20. Quasi-stable injection channels in a wakefield accelerator

    CERN Document Server

    Wiltshire-Turkay, Mara; Pukhov, Alexander

    2016-01-01

    Particle-driven plasma-wakefield acceleration is a promising alternative to conventional electron acceleration techniques, potentially allowing electron acceleration to energies orders of magnitude higher than can currently be achieved. In this work we investigate the dependence of the energy gain on the position at which electrons are injected into the wake. Test particle simulations show previously unobserved complex structure in the parameter space, with quasi-stable injection channels forming for particles injected in narrow regions away from the centre of the wake. The result is relevant to the planning and tuning of experiments making use of external injection.

  1. Epoetin Alfa Injection

    Science.gov (United States)

    ... Combivir), a medication used to treat human immunodeficiency virus (HIV). Epoetin alfa injection is also used before ... inject epoetin alfa, as directed by your doctor. Write down the date, time, dose of epoetin alfa ...

  2. Collagenase Clostridium Histolyticum Injection

    Science.gov (United States)

    Collagenase Clostridium histolyticum injection is used to treat Dupuytren's contracture (a painless thickening and tightening of tissue [cord] beneath ... of tissue can be felt upon examination. Collagenase Clostridium histolyticum injection is also used to treat Peyronie's ...

  3. Iron Sucrose Injection

    Science.gov (United States)

    Iron sucrose injection is used treat iron-deficiency anemia (a lower than normal number of red blood cells due ... and may cause the kidneys to stop working). Iron sucrose injection is in a class of medications called iron ...

  4. Intracytoplasmic sperm injection

    Science.gov (United States)

    Intracytoplasmic sperm injection, or ICSI, is a form of in vitro fertilization in which fertilization occurs outside of the ... laboratory dish. Within a few hours, a single sperm is injected through a fine needle into the ...

  5. Sodium Ferric Gluconate Injection

    Science.gov (United States)

    Sodium ferric gluconate injection is used to treat iron-deficiency anemia (a lower than normal number of ... are also receiving the medication epoetin (Epogen, Procrit). Sodium ferric gluconate injection is in a class of ...

  6. Calcitonin Salmon Injection

    Science.gov (United States)

    Calcitonin salmon injection is used to treat osteoporosis in postmenopausal women. Osteoporosis is a disease that causes bones to weaken and break more easily. Calcitonin salmon injection is also used to treat Paget's disease ...

  7. Other Injectable Medications

    Science.gov (United States)

    ... July 17, 2013 Last Edited: February 22, 2017 Articles from Diabetes Forecast® magazine: cg-infusion-sets,meds-bg-injectables,cg-injection-aids, In this section Treatment and Care Medication Insulin & ...

  8. Injection losses and protection

    CERN Document Server

    Bartmann, W; Baudrenghien, P; Bracco, C; Dehning, B; Di Mauro, A; Drosdal, L; Emery, J; Goddard, B; Holzer, E B; Höfle, W; Kain, V; Meddahi, M; Radaelli, S; Shaposhnilova, E; Uythoven, J; Valuch, D; Wenninger, J; Zamantzas, C; Gianfelice-Wendt, E

    2012-01-01

    Injection losses are compared for 2010 and 2011 operation. Mitigation techniques which were put in place in 2010 to reduce losses at injection are described. Issues in 2011 operation, their potential improvements and the performance reach for 2012 are shown.

  9. Beam injection into RHIC

    Energy Technology Data Exchange (ETDEWEB)

    Fischer, W.; Hahn, H.; MacKay, W.W.; Satogata, T.; Tsoupas, N.; Zhang, W.

    1997-07-01

    During the RHIC sextant test in January 1997 beam was injected into a sixth of one of the rings for the first time. The authors describe the injection zone and its bottlenecks. They report on the commissioning of the injection system, on beam based measurements of the kickers and the application program to steer the beam.

  10. Injection moulding antireflective nanostructures

    DEFF Research Database (Denmark)

    Christiansen, Alexander Bruun; Clausen, Jeppe Sandvik; Mortensen, N. Asger

    2014-01-01

    in an injection moulding process, to fabricate the antireflective surfaces. The cycle-time was 35 s. The injection moulded structures had a height of 125 nm, and the visible spectrum reflectance of injection moulded black polypropylene surfaces was reduced from 4.5±0.5% to 2.5±0.5%. The gradient of the refractive...

  11. Injection moulding antireflective nanostructures

    DEFF Research Database (Denmark)

    Christiansen, Alexander Bruun; Clausen, Jeppe Sandvik; Mortensen, N. Asger

    in an injection moulding process, to fabricate the antireflective surfaces. The cycle-time was 35 s. The injection moulded structures had a height of 125 nm, and the visible spectrum reflectance of injection moulded black polypropylene surfaces was reduced from 4.5±0.5% to 2.5±0.5%. The gradient of the refractive...

  12. Hot carrier injection degradation under dynamic stress

    Institute of Scientific and Technical Information of China (English)

    Ma Xiao-Hua; Cao Yan-Rong; Hao Yue; Zhang Yue

    2011-01-01

    In this paper, we have studied hot carrier injection (HCI) under alternant stress. Under different stress modes, different degradations are obtained from the experiment results. The different alternate stresses can reduce or enhance the HC effect, which mainly depends on the latter condition of the stress cycle. In the stress mode A (DC stress with electron injection), the degradation keeps increasing. In the stress modes B (DC stress and then stress with the smallest gate injection) and C (DC stress and then stress with hole injection under Vg=0V and Vd = 1.8 V), recovery appears in the second stress period. And in the stress mode D (DC stress and then stress with hole injection under Vg = -1.8 V and Vd = 1.8 V), as the traps filled in by holes can be smaller or greater than the generated interface states, the continued degradation or recovery in different stress periods can be obtained.

  13. Epidural injections for back pain

    Science.gov (United States)

    ESI; Spinal injection for back pain; Back pain injection; Steroid injection - epidural; Steroid injection - back ... be pregnant What medicines you are taking, including herbs, supplements, and other drugs you bought without a ...

  14. Characterization of HgCdTe Films Grown on Large-Area CdZnTe Substrates by Molecular Beam Epitaxy

    Science.gov (United States)

    Arkun, F. Erdem; Edwall, Dennis D.; Ellsworth, Jon; Douglas, Sheri; Zandian, Majid; Carmody, Michael

    2017-09-01

    Recent advances in growth of Hg1- x Cd x Te films on large-area (7 cm × 7.5 cm) CdZnTe (CZT) substrates is presented. Growth of Hg1- x Cd x Te with good uniformity on large-area wafers is achieved using a Riber 412 molecular beam epitaxy (MBE) tool designed for growth of Hg1- x Cd x Te compounds. The reactor is equipped with conventional CdTe, Te, and Hg sources for achieving uniform exposure of the wafer during growth. The composition of the Hg1- x Cd x Te compound is controlled in situ by employing a closed-loop spectral ellipsometry technique to achieve a cutoff wavelength ( λ co) of 14 μm at 78 K. We present data on the thickness and composition uniformity of films grown for large-format focal-plane array applications. The composition and thickness nonuniformity are determined to be maps show the spatial distribution of defects generated during the epitaxial growth of the Hg1- x Cd x Te films. Microdefect densities are in the low 103 cm-2 range, and void defects are below 500 cm-2. Dislocation densities less than 5 × 105 cm-2 are routinely achieved for Hg1- x Cd x Te films grown on CZT substrates. HgCdTe 4k × 4k focal-plane arrays with 15 μm pitch for astronomical wide-area infrared imagers have been produced using the recently developed MBE growth process at Teledyne Imaging Sensors.

  15. Optical transverse injection in laser-plasma acceleration.

    Science.gov (United States)

    Lehe, R; Lifschitz, A F; Davoine, X; Thaury, C; Malka, V

    2013-08-23

    Laser-wakefield acceleration constitutes a promising technology for future electron accelerators. A crucial step in such an accelerator is the injection of electrons into the wakefield, which will largely determine the properties of the extracted beam. We present here a new paradigm of colliding-pulse injection, which allows us to generate high-quality electron bunches having both a very low emittance (0.17 mm·mrad) and a low energy spread (2%), while retaining a high charge (~100 pC) and a short duration (3 fs). In this paradigm, the pulse collision provokes a transient expansion of the accelerating bubble, which then leads to transverse electron injection. This mechanism contrasts with previously observed optical injection mechanisms, which were essentially longitudinal. We also specify the range of parameters in which this new type of injection occurs and show that it is within reach of existing high-intensity laser facilities.

  16. Underground Injection Control (UIC)

    Science.gov (United States)

    Provide information on: individual injection well classes; regulations specific to each well class; technical guidance; compliance assistance; federal, state, and tribal/territory roles and responsibilities.

  17. Ferric Carboxymaltose Injection

    Science.gov (United States)

    ... pharmacist if you are allergic to ferric carboxymaltose injection, ferumoxytol (Feraheme), iron dextran (Dexferrum, Infed), iron sucrose (Venofer), or sodium ferric gluconate (Ferrlecit); any other ...

  18. Piezoelectric Injection Systems

    Science.gov (United States)

    Mock, R.; Lubitz, K.

    The origin of direct injection can be doubtlessly attributed to Rudolf Diesel who used air assisted injection for fuel atomisation in his first self-ignition engine. Although it became apparent already at that time that direct injection leads to reduced specific fuel consumption compared to other methods of fuel injection, it was not used in passenger cars for the moment because of its disadvantageous noise generation as the requirements with regard to comfort were seen as more important than a reduced specific consumption.

  19. Quasi-stable injection channels in a wakefield accelerator

    Science.gov (United States)

    Wiltshire-Turkay, Mara; Farmer, John P.; Pukhov, Alexander

    2016-05-01

    The influence of initial position on the acceleration of externally injected electrons in a plasma wakefield is investigated. Test-particle simulations show previously unobserved complex structure in the parameter space, with quasi-stable injection channels forming for particles injected in narrow regions away from the wake centre. Particles injected into these channels remain in the wake for a considerable time after dephasing and as a result achieve significantly higher energy than their neighbours. The result is relevant to both the planning and optimisation of experiments making use of external injection.

  20. 3-D Modeling of Double-Diffusive Convection During Directional Solidification of a Non-Dilute Alloy with Application to the HgCdTe Growth Under Microgravity Conditions

    Science.gov (United States)

    Bune, Andris V.; Gillies, Donald C.; Lehoczky, Sandor L.

    1998-01-01

    A numerical calculation for a non-dilute alloy solidification was performed using the FIDAP finite element code. For low growth velocities plane front solidification occurs. The location and the shape of the interface was determined using melting temperatures from the HgCdTe liquidus curve. The low thermal conductivity of the solid HgCdTe causes thermal short circuit through the ampoule walls, resulting in curved isotherms in the vicinity of the interface. Double-diffusive convection in the melt is caused by radial temperature gradients and by material density inversion with temperature. Cooling from below and the rejection at the solid-melt interface of the heavier HgTe-rich solute each tend to reduce convection. Because of these complicating factors dimensional rather then non-dimensional modeling was performed. Estimates of convection contributions for various gravity conditions was performed parametrically. For gravity levels higher then 1 0 -7 of earth's gravity it was found that the maximum convection velocity is extremely sensitive to gravity vector orientation and can be reduced at least by factor of 50% for precise orientation of the ampoule in the microgravity environment. The predicted interface shape is in agreement with one obtained experimentally by quenching. The results of 3-D modeling are compared with previous 2-D finding. A video film featuring melt convection will be presented.

  1. [Intra-articular injections].

    Science.gov (United States)

    Chapelle, Ch

    2015-09-01

    It is not unusual for a specialist or general practitioner to be presented with a pathology which necessitates the use of an intra-articular injection of corticosteroids, hyaluronic acid or a local anaesthetic. It would seem to be interesting to update and to precise the techniques and methods of intraarticular injections which have appeared in recent international publications, when we know that 30 % of the injections given into the knee and so called "dry" are incorrect and, therefore, inefficient. The indication of an articular injection depends, firstly, on the diagnosis which should be done with great care; after which should be an objective analysis complete with secondary effects linked to both the injection and the product used. The conditions of asepsis, the choice of needles and quantities of the injection and even the ways of the injections should be reviewed in detail. The last studies clearly question the secondary effects of the cartilage degradations of the cortisone given as an intra-articular injection and shows its efficiency on the pain and inflammatory phenomonen in osteoarthritis. Studies on hyaluronic acid are often contradictory going from a modest result to an important pain relief but it is necessary to be aware that the objective criteria are difficult to interpret. The use of local anaesthetics in intra-articular is limited by the few indications in view of the major risk of aggravating the pre-existing lesions by the disappearing signs of pain.

  2. Injection of Deuterium Pellets

    DEFF Research Database (Denmark)

    Sørensen, H.; Andersen, P.; Andersen, S. A.

    1984-01-01

    A pellet injection system made for the TFR tokamak at Fontenay-aux-Roses, Paris is described. 0.12-mg pellets are injected with velocities of around 600-700 m/s through a 5-m long guide tube. Some details of a new light gas gun are given; with this gun, hydrogen pellets are accelerated...

  3. Corticotropin, Repository Injection

    Science.gov (United States)

    H.P. Acthar Gel® ... Corticotropin repository injection comes as a long acting gel to inject under the skin or into a ... prescription and nonprescription medications, vitamins, nutritional supplements, or herbal products you are taking or plan to take. ...

  4. Separably injective Banach spaces

    CERN Document Server

    Avilés, Antonio; Castillo, Jesús M F; González, Manuel; Moreno, Yolanda

    2016-01-01

    This monograph contains a detailed exposition of the up-to-date theory of separably injective spaces: new and old results are put into perspective with concrete examples (such as l∞/c0 and C(K) spaces, where K is a finite height compact space or an F-space, ultrapowers of L∞ spaces and spaces of universal disposition). It is no exaggeration to say that the theory of separably injective Banach spaces is strikingly different from that of injective spaces. For instance, separably injective Banach spaces are not necessarily isometric to, or complemented subspaces of, spaces of continuous functions on a compact space. Moreover, in contrast to the scarcity of examples and general results concerning injective spaces, we know of many different types of separably injective spaces and there is a rich theory around them. The monograph is completed with a preparatory chapter on injective spaces, a chapter on higher cardinal versions of separable injectivity and a lively discussion of open problems and further lines o...

  5. Spin Injection in Indium Arsenide

    Directory of Open Access Journals (Sweden)

    Mark eJohnson

    2015-08-01

    Full Text Available In a two dimensional electron system (2DES, coherent spin precession of a ballistic spin polarized current, controlled by the Rashba spin orbit interaction, is a remarkable phenomenon that’s been observed only recently. Datta and Das predicted this precession would manifest as an oscillation in the source-drain conductance of the channel in a spin-injected field effect transistor (Spin FET. The indium arsenide single quantum well materials system has proven to be ideal for experimental confirmation. The 2DES carriers have high mobility, low sheet resistance, and high spin orbit interaction. Techniques for electrical injection and detection of spin polarized carriers were developed over the last two decades. Adapting the proposed Spin FET to the Johnson-Silsbee nonlocal geometry was a key to the first experimental demonstration of gate voltage controlled coherent spin precession. More recently, a new technique measured the oscillation as a function of channel length. This article gives an overview of the experimental phenomenology of the spin injection technique. We then review details of the application of the technique to InAs single quantum well (SQW devices. The effective magnetic field associated with Rashba spin-orbit coupling is described, and a heuristic model of coherent spin precession is presented. The two successful empirical demonstrations of the Datta Das conductance oscillation are then described and discussed.

  6. Terrestrial VLF transmitter injection into the magnetosphere

    OpenAIRE

    2012-01-01

    Terrestrial VLF transmitter injection into the magnetosphere M. B. Cohen1 and U. S. Inan1,2 Received 1 June 2012; revised 15 June 2012; accepted 18 June 2012; published 9 August 2012. [1] Very Low Frequency (VLF, 3–30 kHz) radio waves emitted from ground sources (transmitters and lightning) strongly impact the radiation belts, driving electron precipitation via whistler-electron gyroresonance, and contributing to the formation of the slot region. However, calculations of the...

  7. Dimethyl Ether Injection Studies

    DEFF Research Database (Denmark)

    Sorenson, Spencer C.; Glensvig, Michael; Abata, Duane L.

    1998-01-01

    effects of DME in high pressure injection have also been observed. DME has a higher compressibility than diesel fuel, resulting in larger pressure oscillations in the injection system during the injection process. The oscillations with DME also have a slower delay rate than those of diesel fuel......A series of preliminary investigations has been performed in order to investigate the behavior of DME in a diesel injection environment. These studies have in-cluded visual observations of the spray penetration and angles for high pressure injection into Nitrogen using conventional jerk pump...... in the same system. As a first attempt to simulate combustion of DME in Diesel engines, the results of the spray studies have been incorporated into a simplified spray combustion model. A turbulent jet structure was adjusted to fit the penetration rates of the observed sprays. The observed spray widths agreed...

  8. Characteristics of pellet injected discharges in TEXTOR

    Energy Technology Data Exchange (ETDEWEB)

    Finken, K.H. [Institut fuer Plasmaphysik, Forschungszentrum Juelich GmbH, Assocition Euratom-KFA, 52425 Juelich (Germany); Sato, K.N. [National Institute for Fusion Science, Nagoya 464-01 (Japan); Akiyama, H. [Kumamoto University, Kumamoto 860 (Japan); Fuchs, G.; Jaspers, R. [Institut fuer Plasmaphysik, Forschungszentrum Juelich GmbH, Assocition Euratom-KFA, 52425 Juelich (Germany); Kogoshi, S. [Science University of Tokyo, Noda 278 (Japan); Koslowski, H.R.; Mank, G. [Institut fuer Plasmaphysik, Forschungszentrum Juelich GmbH, Assocition Euratom-KFA, 52425 Juelich (Germany); Sakakita, H.; Sakamoto, M. [National Institute for Fusion Science, Nagoya 464-01 (Japan); Sander, M.; Soltwisch, H. [Institut fuer Plasmaphysik, Forschungszentrum Juelich GmbH, Assocition Euratom-KFA, 52425 Juelich (Germany)

    1995-09-01

    Pellets injected into the TEXTOR tokamak lead to a density profile peaking which is strongest at low plasma current and weakest at high current independent of {ital B}{sub {ital T}}. After the injection two types of density oscillations are excited, the first type follows immediately the injection and the second one is excited with a delay of more than ten milliseconds. The oscillations are also observed in runaway discharges; the synchrotron light from the relativistic electrons drops after the pellet injection and is subsequently modulated due to a trapping of the runaways in magnetic islands. First Faraday measurements have been performed indicating that the distribution of the plasma current is not measurably modified by the pellet. {copyright} {ital 1995 American Institute of Physics.}

  9. A semiconductor injection-switched high-pressure sub-10-picosecond carbon dioxide laser amplifier

    Science.gov (United States)

    Hughes, Michael Kon Yew

    A multiatmospheric-pressure-broadened CO2 laser amplifier was constructed to amplify sub-10-picosecond pulses generated with semiconductor switching. High-intensity, mid-infrared, amplified pulses have many applications: especially in fields such as non-linear optics, laser-plasma interaction, and laser particle acceleration. The injected pulses are produced by exciting GaAs (or an engineered, fast-recombination time semiconductor) with an ultrafast visible laser pulse to induce transient free carriers with sufficient density to reflect a co-incident hybrid-CO2 laser pulse. The short pulse is injected directly into the regenerative amplifier cavity from an intra-cavity semiconductor switch. The CO2-gas-mix amplifier is operated at 1.24 MPa which is sufficient to collisionally broaden the individual rotational spectral lines so that they merge to produce a gain spectrum wide enough to support pulses less than 10 ps long. After sufficient amplification, the pulse is switched out with another semiconductor switch pumped with a synchronized visible-laser pulse. This system is demonstrated and analysed spectrally and temporally. The pulse-train spectral analysis is done for a GaAs-GaAs double-switch arrangement using a standard spectrometer and two HgCdTe detectors; one of which is used for a reference signal. An infrared autocorrelator was designed and constructed to temporally analyse the pulse trains emerging from the amplifier. Interpretation of the results was aided by the development of a computer model for short-pulse amplification which incorporated saturation effects, rotational- and vibrational-mode energy redistribution between pulse round trips, and the gain enhancement due to one sequence band. The results show that a sub-10-picosecond pulse is injected into the cavity and that it is amplified with some trailing pulses at 18 ps intervals generated by coherent effects. The energy level reached, estimated through modelling, was >100 mJ/cm2.

  10. Spin electronics

    CERN Document Server

    Buhrman, Robert; Daughton, James; Molnár, Stephan; Roukes, Michael

    2004-01-01

    This report is a comparative review of spin electronics ("spintronics") research and development activities in the United States, Japan, and Western Europe conducted by a panel of leading U.S. experts in the field. It covers materials, fabrication and characterization of magnetic nanostructures, magnetism and spin control in magnetic nanostructures, magneto-optical properties of semiconductors, and magnetoelectronics and devices. The panel's conclusions are based on a literature review and a series of site visits to leading spin electronics research centers in Japan and Western Europe. The panel found that Japan is clearly the world leader in new material synthesis and characterization; it is also a leader in magneto-optical properties of semiconductor devices. Europe is strong in theory pertaining to spin electronics, including injection device structures such as tunneling devices, and band structure predictions of materials properties, and in development of magnetic semiconductors and semiconductor heterost...

  11. Injection moulding antireflective nanostructures

    DEFF Research Database (Denmark)

    Christiansen, Alexander Bruun; Clausen, Jeppe Sandvik; Mortensen, N. Asger

    in an injection moulding process, to fabricate the antireflective surfaces. The cycle-time was 35 s. The injection moulded structures had a height of 125 nm, and the visible spectrum reflectance of injection moulded black polypropylene surfaces was reduced from 4.5±0.5% to 2.5±0.5%. The gradient of the refractive...... index of the nanostructured surfaces was estimated from atomic force micrographs and the theoretical reflectance was calculated using the transfer matrix method and effective medium theory. The measured reflectance shows good agreement with the theory of graded index antireflective nanostructures...

  12. ALICE Injected Beam Accidents

    CERN Document Server

    Appleby, R B

    2009-01-01

    The ALICE (point 2) interaction region is sensitive to beam orbit errors arising from magnet setting errors on injection. In this report, beam accident scenarios under injection for ALICE are described, focusing on ultra- fast error injection scenarios for the interaction straight correctors and dipoles. Beam 1 and beam 2 accident scenarios are considered, where the errors can lead to beam orbits striking the ALICE vacuum chamber or elements of the machine. The required thresholds for magnet current interlocks are calculated to avoid machine and detector risk.

  13. LHCb Injected Beam Accidents

    CERN Document Server

    Appleby, R B

    2009-01-01

    The LHCb (point 8) interaction region is sensitive to beam orbit errors arising from magnet setting errors on injection. In this report, beam accident scenarios under injection for LHCb are described, focusing on ultra- fast error injection scenarios for the interaction straight correctors and dipoles. Beam 1 and beam 2 accident scenarios are considered, where the errors can lead to beam orbits striking the LHCb vacuum chamber or elements of the machine. The required thresholds for magnet current interlocks are calculated to avoid machine and detector risk.

  14. Common injections in musculoskeletal medicine.

    Science.gov (United States)

    Monseau, Aaron J; Nizran, Parminder Singh

    2013-12-01

    Musculoskeletal injections are a common procedure in primary care and sports medicine but can be intimidating for some clinicians. This article addresses current evidence for corticosteroid injections, and common injection indications and techniques, namely knee, subacromial bursa, glenohumeral joint, lateral epicondyle, de Quervain tenosynovitis, and greater trochanteric bursa injections. Preparation for injections and some evidence for ultrasound guidance are also reviewed.

  15. Active Stabilization of a Diode Laser Injection Lock

    OpenAIRE

    Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

    2016-01-01

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudde...

  16. Active Stabilization of a Diode Laser Injection Lock

    OpenAIRE

    Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

    2016-01-01

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudde...

  17. Analysis of the auger recombination rate in P+N-n-N-N HgCdTe detectors for HOT applications

    Science.gov (United States)

    Schuster, J.; Tennant, W. E.; Bellotti, E.; Wijewarnasuriya, P. S.

    2016-05-01

    Infrared (IR) photon detectors must be cryogenically cooled to provide the highest possible performance, usually to temperatures at or below ~ 150K. Such low operating temperatures (Top) impose very stringent requirements on cryogenic coolers. As such, there is a constant push in the industry to engineer new detector architectures that operate at higher temperatures, so called higher operating temperature (HOT) detectors. The ultimate goal for HOT detectors is room temperature operation. While this is not currently possibly for photon detectors, significant increases in Top are nonetheless beneficial in terms of reduced size, weight, power and cost (SWAP-C). The most common HgCdTe IR detector architecture is the P+n heterostructure photodiode (where a capital letter indicates a wide band gap relative to the active layer or "AL"). A variant of this architecture, the P+N-n-N-N heterostructure photodiode, should have a near identical photo-response to the P+n heterostructure, but with significantly lower dark diffusion current. The P+N-n-N-N heterostructure utilizes a very low doped AL, surrounded on both sides by wide-gap layers. The low doping in the AL, allows the AL to be fully depleted, which drastically reduces the Auger recombination rate in that layer. Minimizing the Auger recombination rate reduces the intrinsic dark diffusion current, thereby increasing Top. Note when we use the term "recombination rate" for photodiodes, we are actually referring to the net generation and recombination of minority carriers (and corresponding dark currents) by the Auger process. For these benefits to be realized, these devices must be intrinsically limited and well passivated. The focus of this proceeding is on studying the fundamental physics of the intrinsic dark currents in ideal P+N-n-N-N heterostructures, namely Auger recombination. Due to the complexity of these devices, specifically the presence of multiple heterojunctions, numerical device modeling techniques must be

  18. A discrete element model of laser beam induced current (LBIC) due to the lateral photovoltaic effect in open-circuit HgCdTe photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Fynn, K.A.; Faraone, L. [Univ. of Western Australia, Nedlands (Australia). Dept. of Electrical and Electronic Engineering; Bajaj, J. [Rockwell International Science Center, Thousand Oaks, CA (United States)

    1995-10-01

    The non-destructive optical characterization technique of Laser-Beam-Induced-Current (LBIC) imaging has proven useful in qualitatively assessing electrically active defects and localized non-uniformities in HgCdTe materials and devices used for infrared photovoltaic arrays. To further the development of a quantitative working model for LBIC, this paper focuses on the application of the technique to photovoltaic structures that are represented by a discrete element equivalent circuit. For this particular case the LBIC signal arises due to the lateral photovoltaic effect in non-uniformly illuminated open-circuit photodiodes. The outcomes of the model predict all of the experimentally observed geometrical features of the LBIC image and signal. Furthermore, the model indicates that the LBIC signal has an extremely weak dependence on the p-n junction reverse saturation current, and shows a linear dependence with laser power. This latter feature may be useful for non-contact measurement of the quantum efficiency of individual photodiodes within a large two-dimensional focal plane array. The decay of the LBIC signal outside the physical boundary of the p-n junction is of the same form as the roll-off in the short circuit photoresponse and, therefore, can be used to extract the diffusion length of minority carriers. Experimental data are obtained from an arsenic implanted p-on-n junction fabricated on MBE grown Hg{sub 1{minus}x}Cd{sub x}Te material with an x-value of 0.3. The p-on-n diode is shown to be uniform and of high quality with an R{sub o}A product of 1 {times} 10{sup 8} {Omega}{center_dot}cm{sup 2} at 77 K. The validity of the simple model developed in this paper, is confirmed by the excellent agreement with experimental results. Consequently, the LBIC technique is shown to be an appropriate diagnostic tool for non-contact quantitative analysis of semiconductor materials and devices.

  19. Mouse bladder wall injection.

    Science.gov (United States)

    Fu, Chi-Ling; Apelo, Charity A; Torres, Baldemar; Thai, Kim H; Hsieh, Michael H

    2011-07-12

    Mouse bladder wall injection is a useful technique to orthotopically study bladder phenomena, including stem cell, smooth muscle, and cancer biology. Before starting injections, the surgical area must be cleaned with soap and water and antiseptic solution. Surgical equipment must be sterilized before use and between each animal. Each mouse is placed under inhaled isoflurane anesthesia (2-5% for induction, 1-3% for maintenance) and its bladder exposed by making a midline abdominal incision with scissors. If the bladder is full, it is partially decompressed by gentle squeezing between two fingers. The cell suspension of interest is intramurally injected into the wall of the bladder dome using a 29 or 30 gauge needle and 1 cc or smaller syringe. The wound is then closed using wound clips and the mouse allowed to recover on a warming pad. Bladder wall injection is a delicate microsurgical technique that can be mastered with practice.

  20. IncobotulinumtoxinA Injection

    Science.gov (United States)

    ... injected into a muscle, it blocks the nerve signals that cause uncontrollable tightening and movements of the ... any of these symptoms, do not drive a car, operate machinery, or do other dangerous activities.if ...

  1. Amphotericin B Liposomal Injection

    Science.gov (United States)

    ... lining of the spinal cord and brain) and visceral leishmaniasis (a parasitic disease that usually affects spleen, ... complex injection: fever, chills, nausea, vomiting, flushing, back pain with or without chest tightness, chest pain, shortness ...

  2. PS injection area

    CERN Multimedia

    1974-01-01

    To the right is the PS ring viewed along the direction of the protons. At the left the injection line coming from the 50 MeV Linac 1 (bottom) and going towards the 800 MeV booster, or deflected to the right to be injected directly into straight section 16. The drumlike element behind the (blue) dipole magnet is a 'debuncher' (a 200 MHz cavity). See photos 7409014X and 7409009.

  3. Injection and Dump Systems

    CERN Document Server

    Bracco, C; Barnes, M J; Carlier, E; Drosdal, L N; Goddard, B; Kain, V; Meddahi, M; Mertens, V; Uythoven, J

    2012-01-01

    Performance and failures of the LHC injection and ex- traction systems are presented. In particular, a comparison with the 2010 run, lessons learnt during operation with high intensity beams and foreseen upgrades are described. UFOs, vacuum and impedance problems related to the injection and extraction equipment are analysed together with possible improvements and solutions. New implemented features, diagnostics, critical issues of XPOC and IQC applications are addressed.

  4. Observation of longitudinal and transverse self-injections in laser-plasma accelerators

    CERN Document Server

    Corde, S; Lifschitz, A; Lambert, G; Phuoc, K Ta; Davoine, X; Lehe, R; Douillet, D; Rousse, A; Malka, V

    2013-01-01

    Laser-plasma accelerators can produce high quality electron beams, up to giga-electronvolts in energy, from a centimeter scale device. The properties of the electron beams and the accelerator stability are largely determined by the injection stage of electrons into the accelerator. The simplest mechanism of injection is self-injection, in which the wakefield is strong enough to trap cold plasma electrons into the laser wake. The main drawback of this method is its lack of shot-to-shot stability. Here we present experimental and numerical results that demonstrate the existence of two different self-injection mechanisms. Transverse self-injection is shown to lead to low stability and poor quality electron beams, because of a strong dependence on the intensity profile of the laser pulse. In contrast, longitudinal injection, which is unambiguously observed for the first time, is shown to lead to much more stable acceleration and higher quality electron beams.

  5. Observation of longitudinal and transverse self-injections in laser-plasma accelerators.

    Science.gov (United States)

    Corde, S; Thaury, C; Lifschitz, A; Lambert, G; Ta Phuoc, K; Davoine, X; Lehe, R; Douillet, D; Rousse, A; Malka, V

    2013-01-01

    Laser-plasma accelerators can produce high-quality electron beams, up to giga electronvolts in energy, from a centimetre scale device. The properties of the electron beams and the accelerator stability are largely determined by the injection stage of electrons into the accelerator. The simplest mechanism of injection is self-injection, in which the wakefield is strong enough to trap cold plasma electrons into the laser wake. The main drawback of this method is its lack of shot-to-shot stability. Here we present experimental and numerical results that demonstrate the existence of two different self-injection mechanisms. Transverse self-injection is shown to lead to low stability and poor-quality electron beams, because of a strong dependence on the intensity profile of the laser pulse. In contrast, longitudinal injection, which is unambiguously observed for the first time, is shown to lead to much more stable acceleration and higher-quality electron beams.

  6. Spin injection in silicon at zero magnetic field

    OpenAIRE

    Grenet, L.; Jamet, M.; Noé, P.; Calvo, V.; Hartmann, J.-M.; Nistor, L. E.; Rodmacq, B.; Auffret, S.; Warin, P.; Samson, Y

    2009-01-01

    International audience; In this letter, we show efficient electrical spin injection into a SiGe based p-i-n light emitting diode from the remanent state of a perpendicularly magnetized ferromagnetic contact. Electron spin injection is carried out through an alumina tunnel barrier from a Co/Pt thin film exhibiting a strong out-of-plane anisotropy. The electron spin polarization is then analyzed through the circular polarization of emitted light. All the light polarization measurements are perf...

  7. Injection Efficiency Monitor for the Australian Synchrotron

    Directory of Open Access Journals (Sweden)

    Rassool R. P.

    2012-10-01

    Full Text Available The Australian Synchrotron AS is moving towards a continuous injection mode called top-up. During top-up the linac and booster synchrotron injection system will be in continuous operation rather than usedevery eight hours the way they are used at present. In order to monitor the performance of the injection system areal-time injection efficiency monitoring system has been developed. The system consists of several Fast CurrentTransformers [1] and matching digitisers [2] and is designed to count every beam pulse and measure the transmission efficiency through the whole accelerator complex. After calibrating the system using a properly matchedFaraday Cup at the electron gun, a transmission efficiency is then calculated at each stage of transferring the beamfrom 90 keV out of the gun to 3 GeV in the storage ring. The system is used to optimise the injection process inorder to maximise the injection efficiency and as an early warning system when equipment starts to fail and theinjection efficiency decreases.

  8. The Study on the Properties of CdTe Buffer Layer for MBE HgCdTe Epilayer%分子束外延HgCdTe薄膜的CdTe缓冲层特性研究

    Institute of Scientific and Technical Information of China (English)

    宋立媛; 唐利斌; 李艳辉; 孔令德; 陈雪梅

    2009-01-01

    CdTe是GaAs衬底上分子束外延(MBE)HgCdTe薄膜时的缓冲层,引入缓冲层的目的是减小失配位错,CdTe缓冲层的生长直接影响到后续HgCdTe薄膜的制备质量,然而目前现有文献鲜有报道CdTe缓冲层的最佳厚度.采用X射线双晶衍射、位错腐蚀坑密度(EPD)、FT-IR和椭圆偏振光谱的方法,从CdTe缓冲层厚度对位错密度的影响入手,分析并确定了理想的CdTe缓冲层厚度.%CdTe is the buffer layer of GaAs substrate for HgCdTe eoilayer grown by MBE,The purpose for introduction of buffer laver is to decrease the mismatched dislocation,the growth of CdTe buffer layer directly affects the quality of foilowing grown HgCdTe thin film.However,up to now only few papers have reported the optimum thickness for CdTe buffer layer.By using of X-ray double ervstal diffraction,EPD,FT-IR as well as soectroscopic ellipsometry the paper has studied the effects of the thickness on EPD for CdTe buffer layer,the optimum thickness of CdTe buffer layer has been obtained.

  9. Polarized Electron Source Developments

    Energy Technology Data Exchange (ETDEWEB)

    Charles K. Sinclair

    1990-02-23

    Presently, only two methods of producing beams of polarized electrons for injection into linear accelerators are in use. Each of these methods uses optical pumping by circularly polarized light to produce electron polarization. In one case, electron polarization is established in metastable helium atoms, while in the other case, the polarized electrons are produced in the conduction band of appropriate semiconductors. The polarized electrons are liberated from the helium metastable by chemi-ionization, and from the semiconductors by lowering the work function at the surface of the material. Developments with each of these sources since the 1988 Spin Physics Conference are reviewed, and the prospects for further improvements discussed.

  10. Intracytoplasmic Sperm Injection (ICSI)

    Science.gov (United States)

    ... sperm must attach to the outside of the egg. Once attached, the sperm pushes through the outer layer to the inside ... in vitro fertilization (IVF) to help fertilize the egg. During ICSI, a single sperm is injected directly into the cytoplasm the egg. ...

  11. Water injection dredging

    NARCIS (Netherlands)

    Verhagen, H.J.

    2000-01-01

    Some twenty years ago WIS-dredging has been developed in the Netherlands. By injecting water into the mud layer, the water content of the mud becomes higher, it becomes fluid mud and will start to flow. The advantages of this system are that there is no need of transporting the mud in a hopper, and

  12. Giving an insulin injection

    Science.gov (United States)

    ... an alcohol wipe on your injection site. The insulin needs to go into the fat layer under the skin. Pinch the skin and put the needle in at a 45º angle. If your tissues are thick enough, you may be able to ...

  13. Incoherent vertical ion losses during multiturn stacking cooling beam injection

    Science.gov (United States)

    Syresin, E. M.

    2014-07-01

    The efficiency of the multiturn ion injection with electron cooling depends on two parameters, namely, cooling efficiency and ion lifetime. The lifetime of freshly injected ions is usually shorter than the lifetime of strongly cooled stacked ions. Freshly injected ions are lost in the vertical direction because the vertical acceptance of the synchrotron is usually a few times smaller than the horizontal acceptance. Incoherent vertical losses of freshly injected ions arise from their multiple scattering by residual gas atoms and transverse diffusion caused by stack noise. Reduced ion lifetime limits the multiturn injection efficiency. Analytical estimations and BETACOOL-based numerical evaluations of the vertical ion losses during multiturn injection are presented in comparison with the experimental data obtained at the HIMAC synchrotron and the S-LSR storage ring.

  14. Injection of photoelectrons into dense argon gas

    CERN Document Server

    Borghesani, A F

    2010-01-01

    The injection of photoelectrons in a gaseous or liquid sample is a widespread technique to produce a cold plasma in a weakly--ionized system in order to study the transport properties of electrons in a dense gas or liquid. We report here the experimental results of photoelectron injection into dense argon gas at the temperatureT=142.6 K as a function of the externally applied electric field and gas density. We show that the experimental data can be interpreted in terms of the so called Young-Bradbury model only if multiple scattering effects due to the dense environment are taken into account when computing the scattering properties and the energetics of the electrons.

  15. CCD Readout Electronics for the Subaru Prime Focus Spectrograph

    CERN Document Server

    Hope, Stephen C; Loomis, Craig P; Fitzgerald, Roger E; Peacock, Grant O

    2014-01-01

    We present details of the design for the CCD readout electronics for the Subaru Telescope Prime Focus Spectrograph (PFS). The spectrograph is comprised of four identical spectrograph modules, each collecting roughly 600 spectra. The spectrograph modules provide simultaneous wavelength coverage over the entire band from 380 nm to 1260 nm through the use of three separate optical channels: blue, red, and near infrared (NIR). A camera in each channel images the multi-object spectra onto a 4k x 4k, 15 um pixel, detector format. The two visible cameras use a pair of Hamamatsu 2k x 4k CCDs with readout provided by custom electronics, while the NIR camera uses a single Teledyne HgCdTe 4k x 4k detector and ASIC Sidecar to read the device. The CCD readout system is a custom design comprised of three electrical subsystems: the Back End Electronics (BEE), the Front End Electronics (FEE), and a Pre-amplifier. The BEE is an off-the-shelf PC104 computer, with an auxiliary Xilinx FPGA module. The computer serves as the main...

  16. 在激光尾场加速中电子密度和初始动量对其自注入及加速的影响%The Effects for Density and Initial Momentum of Electrons on the Self-Injection and Acceleration in Laser Wakefield Acceleration

    Institute of Scientific and Technical Information of China (English)

    刘明萍; 陶志鹏; 钟西鹃; 陶向阳; 刘三秋

    2013-01-01

    利用哈密顿理论给出了等离子体电子在尾场中捕获及其加速与激光、等离子体参量的关系表达式.讨论了等离子体电子密度和初始动量对电子自注入和加速的影响机制.研究结果表明:静止电子不能被尾场捕获并加速,而具有一定初始动量的电子容易自注入至激光尾场中并得到加速.等离子体密度越小,激光尾场场强越强,电子将获得更大的能量.2维粒子模拟结果与理论结论一致.所得结果对超强超短脉冲激光尾场加速电子的方案具有理论指导意义.%The equation of electron momentum in the wakefield during the laser-plasma interaction has been derived by using the Hamiltonian theory. The dependences of electron self-injection and acceleration on the plasma density and initial momentum have been discussed in detail. It is found that electrons with certain initial momentum can be trapped and accelerated forward in the wakefield, while electron with pxO = 0 participates in the wake field oscillation. The lower the plasma density is,the larger the electron momentum is,i. e. ,the electron gains more energy. The theoretical results are consist with those of PIC simulations. The results may be significant theoretically to the mechanism of ultraintense laser-wakefield acceleration.

  17. A study on the steady-state solutions of a Bursian diode in the presence of transverse magnetic field, when the electrons of the injected beam are turned back partially or totally

    Energy Technology Data Exchange (ETDEWEB)

    Pramanik, Sourav; Chakrabarti, Nikhil [Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India); Kuznetsov, V. I. [Ioffe Institute, 194021 St. Petersburg (Russian Federation)

    2015-11-15

    The properties of a steady-state planar vacuum diode driven by a cold electron beam have been investigated in the presence of an external transverse magnetic field, employing both the Eulerian and the Lagrangian formalism. With the help of a numerical scheme, the features of the steady-state solutions have been explored in the Eulerian frame, particularly for the case that corresponds to the potential distributions with a virtual cathode. However, exact analytical formulae for the potential and velocity profiles within the inter-electrode region have been derived with the Lagrangian description. In contrast to the previous work [Phys. Plasmas 22, 042110 (2015)], here we have emphasized the situation when electrons are reflected back to the emitter by the magnetic field. Both partial and complete reflection of the electrons due to the magnetic field have been taken into account. Using the emitter electric field as a characteristic parameter, steady-state solutions have been evaluated for specific values of diode length, applied voltage, and magnetic field strength. It has been shown that, due to the inclusion of the magnetic field, a new region of non-unique solutions appears. An external magnetic field seems to have a profound effect in controlling fast electronic switches based on the Bursian diode.

  18. Free Electron Laser Research in Europe.

    Science.gov (United States)

    1983-03-03

    Comitato Nazionale Energia in the proceedings of various Co ato NrascatioCnae Eri conferences and schools. Marino is an experimentalist formerly...injection); modification to injection from Instituto Nazionale di Fisica within the cavity (Kapitza Nuclere injection) has increased the electron beam

  19. Injection-controlled laser resonator

    Science.gov (United States)

    Chang, J.J.

    1995-07-18

    A new injection-controlled laser resonator incorporates self-filtering and self-imaging characteristics with an efficient injection scheme. A low-divergence laser signal is injected into the resonator, which enables the injection signal to be converted to the desired resonator modes before the main laser pulse starts. This injection technique and resonator design enable the laser cavity to improve the quality of the injection signal through self-filtering before the main laser pulse starts. The self-imaging property of the present resonator reduces the cavity induced diffraction effects and, in turn, improves the laser beam quality. 5 figs.

  20. Colliding ionization injection in a beam driven plasma accelerator

    CERN Document Server

    Wan, Y; Li, F; Wu, Y P; Hua, J F; Pai, C -H; Lu, W; Joshi, C; Mori, W B; Gu, Y Q

    2015-01-01

    The proposal of generating high quality electron bunches via ionization injection triggered by an counter propagating laser pulse inside a beam driven plasma wake is examined via two-dimensional particle-in-cell simulations. It is shown that electron bunches obtained using this technique can have extremely small slice energy spread, because each slice is mainly composed of electrons ionized at the same time. Another remarkable advantage is that the injection distance is changeable. A bunch with normalized emittance of 3.3 nm, slice energy spread of 15 keV and brightness of 7.2 A m$^{-2}$ rad$^{-2}$ is obtained with an optimal injection length which is achieved by adjusting the launch time of the drive beam or by changing the laser focal position. This makes the scheme a promising approach to generate high quality electron bunches for the fifth generation light source.

  1. SPS injection kicker magnet

    CERN Multimedia

    1975-01-01

    One of the first-generation SPS injection kicker magnets, view of the complete tank. First proton beam from the PS was injected into the SPS in 1976, at a beam momentum of 10 GeV/c. These kickers served until the end of 1979 and were replaced at the beginning of 1980 by stronger ones, in preparation for the SPS as a proton-antiproton collider. For this, transfer momentum from the PS to the SPS was raised to 26 GeV/c, so as to avoid acceleration of the dense p and pbar bunches through SPS transition energy. Bearded Roland Tröhler is at the left, Giacomo Busetta smiles at the right. See also 7502073X, 7502074X and Annual Report 1975, 162.

  2. PS injection area

    CERN Multimedia

    1974-01-01

    Looking against the direction of protons in the main ring (left): the beam coming from the linac 1 either goes to the booster (on the right) or is deflected towards the PS to be directly injected into section 26 (facing the camera). Also shown the start of the TT2 line, ejected from straight section 16 to go towards the ISR passing over the beam line from the linac. (see Photo Archive 7409009)

  3. Injection-induced earthquakes.

    Science.gov (United States)

    Ellsworth, William L

    2013-07-12

    Earthquakes in unusual locations have become an important topic of discussion in both North America and Europe, owing to the concern that industrial activity could cause damaging earthquakes. It has long been understood that earthquakes can be induced by impoundment of reservoirs, surface and underground mining, withdrawal of fluids and gas from the subsurface, and injection of fluids into underground formations. Injection-induced earthquakes have, in particular, become a focus of discussion as the application of hydraulic fracturing to tight shale formations is enabling the production of oil and gas from previously unproductive formations. Earthquakes can be induced as part of the process to stimulate the production from tight shale formations, or by disposal of wastewater associated with stimulation and production. Here, I review recent seismic activity that may be associated with industrial activity, with a focus on the disposal of wastewater by injection in deep wells; assess the scientific understanding of induced earthquakes; and discuss the key scientific challenges to be met for assessing this hazard.

  4. Injection-induced earthquakes

    Science.gov (United States)

    Ellsworth, William L.

    2013-01-01

    Earthquakes in unusual locations have become an important topic of discussion in both North America and Europe, owing to the concern that industrial activity could cause damaging earthquakes. It has long been understood that earthquakes can be induced by impoundment of reservoirs, surface and underground mining, withdrawal of fluids and gas from the subsurface, and injection of fluids into underground formations. Injection-induced earthquakes have, in particular, become a focus of discussion as the application of hydraulic fracturing to tight shale formations is enabling the production of oil and gas from previously unproductive formations. Earthquakes can be induced as part of the process to stimulate the production from tight shale formations, or by disposal of wastewater associated with stimulation and production. Here, I review recent seismic activity that may be associated with industrial activity, with a focus on the disposal of wastewater by injection in deep wells; assess the scientific understanding of induced earthquakes; and discuss the key scientific challenges to be met for assessing this hazard.

  5. Steroid injections - tendon, bursa, joint

    Science.gov (United States)

    ... medlineplus.gov/ency/article/007678.htm Steroid injections - tendon, bursa, joint To use the sharing features on ... painful. It can be injected into a joint, tendon, or bursa. Description Your health care provider inserts ...

  6. Amphotericin B Lipid Complex Injection

    Science.gov (United States)

    Amphotericin B lipid complex injection is used to treat serious, possibly life-threatening fungal infections in people who did not respond ... to tolerate conventional amphotericin B therapy. Amphotericin B lipid complex injection is in a class of medications ...

  7. Injection treatments for patellar tendinopathy

    NARCIS (Netherlands)

    van Ark, Mathijs; Zwerver, Johannes; van den Akker-Scheek, Inge

    2011-01-01

    Objective Injection treatments are increasingly used as treatment for patellar tendinopathy. The aim of this systematic review is to describe the different injection treatments, their rationales and the effectiveness of treating patellar tendinopathy. Methods A computerised search of the Medline,

  8. Charge injection in thin dielectric layers by atomic force microscopy: influence of geometry and material work function of the AFM tip on the injection process.

    Science.gov (United States)

    Villeneuve-Faure, C; Makasheva, K; Boudou, L; Teyssedre, G

    2016-06-17

    Charge injection and retention in thin dielectric layers remain critical issues for the reliability of many electronic devices because of their association with a large number of failure mechanisms. To overcome this drawback, a deep understanding of the mechanisms leading to charge injection close to the injection area is needed. Even though the charge injection is extensively studied and reported in the literature to characterize the charge storage capability of dielectric materials, questions about charge injection mechanisms when using atomic force microscopy (AFM) remain open. In this paper, a thorough study of charge injection by using AFM in thin plasma-processed amorphous silicon oxynitride layers with properties close to that of thermal silica layers is presented. The study considers the impact of applied voltage polarity, work function of the AFM tip coating and tip curvature radius. A simple theoretical model was developed and used to analyze the obtained experimental results. The electric field distribution is computed as a function of tip geometry. The obtained experimental results highlight that after injection in the dielectric layer the charge lateral spreading is mainly controlled by the radial electric field component independently of the carrier polarity. The injected charge density is influenced by the nature of electrode metal coating (work function) and its geometry (tip curvature radius). The electron injection is mainly ruled by the Schottky injection barrier through the field electron emission mechanism enhanced by thermionic electron emission. The hole injection mechanism seems to differ from the electron one depending on the work function of the metal coating. Based on the performed analysis, it is suggested that for hole injection by AFM, pinning of the metal Fermi level with the metal-induced gap states in the studied silicon oxynitride layers starts playing a role in the injection mechanisms.

  9. Charge injection in thin dielectric layers by atomic force microscopy: influence of geometry and material work function of the AFM tip on the injection process

    Science.gov (United States)

    Villeneuve-Faure, C.; Makasheva, K.; Boudou, L.; Teyssedre, G.

    2016-06-01

    Charge injection and retention in thin dielectric layers remain critical issues for the reliability of many electronic devices because of their association with a large number of failure mechanisms. To overcome this drawback, a deep understanding of the mechanisms leading to charge injection close to the injection area is needed. Even though the charge injection is extensively studied and reported in the literature to characterize the charge storage capability of dielectric materials, questions about charge injection mechanisms when using atomic force microscopy (AFM) remain open. In this paper, a thorough study of charge injection by using AFM in thin plasma-processed amorphous silicon oxynitride layers with properties close to that of thermal silica layers is presented. The study considers the impact of applied voltage polarity, work function of the AFM tip coating and tip curvature radius. A simple theoretical model was developed and used to analyze the obtained experimental results. The electric field distribution is computed as a function of tip geometry. The obtained experimental results highlight that after injection in the dielectric layer the charge lateral spreading is mainly controlled by the radial electric field component independently of the carrier polarity. The injected charge density is influenced by the nature of electrode metal coating (work function) and its geometry (tip curvature radius). The electron injection is mainly ruled by the Schottky injection barrier through the field electron emission mechanism enhanced by thermionic electron emission. The hole injection mechanism seems to differ from the electron one depending on the work function of the metal coating. Based on the performed analysis, it is suggested that for hole injection by AFM, pinning of the metal Fermi level with the metal-induced gap states in the studied silicon oxynitride layers starts playing a role in the injection mechanisms.

  10. Electronics and electronic systems

    CERN Document Server

    Olsen, George H

    1987-01-01

    Electronics and Electronic Systems explores the significant developments in the field of electronics and electronic devices. This book is organized into three parts encompassing 11 chapters that discuss the fundamental circuit theory and the principles of analog and digital electronics. This book deals first with the passive components of electronic systems, such as resistors, capacitors, and inductors. These topics are followed by a discussion on the analysis of electronic circuits, which involves three ways, namely, the actual circuit, graphical techniques, and rule of thumb. The remaining p

  11. Acupuncture Injection Combined with Electrokinetic Injection for Polydimethylsiloxane Microfluidic Devices

    Directory of Open Access Journals (Sweden)

    Ji Won Ha

    2017-01-01

    Full Text Available We recently reported acupuncture sample injection that leads to reproducible injection of nL-scale sample segments into a polydimethylsiloxane (PDMS microchannel for microchip capillary electrophoresis. The advantages of the acupuncture injection in microchip capillary electrophoresis include capability of minimizing sample loss and voltage control hardware and capability of introducing sample plugs into any desired position of a microchannel. However, the challenge in the previous study was to achieve reproducible, pL-scale sample injections into PDMS microchannels. In the present study, we introduce an acupuncture injection technique combined with electrokinetic injection (AICEI technique to inject pL-scale sample segments for microchip capillary electrophoresis. We carried out the capillary zone electrophoresis (CZE separation of FITC and fluorescein, and the mixture of 10 μM FITC and 10 μM fluorescein was separated completely by using the AICEI method.

  12. Acupuncture Injection Combined with Electrokinetic Injection for Polydimethylsiloxane Microfluidic Devices

    Science.gov (United States)

    2017-01-01

    We recently reported acupuncture sample injection that leads to reproducible injection of nL-scale sample segments into a polydimethylsiloxane (PDMS) microchannel for microchip capillary electrophoresis. The advantages of the acupuncture injection in microchip capillary electrophoresis include capability of minimizing sample loss and voltage control hardware and capability of introducing sample plugs into any desired position of a microchannel. However, the challenge in the previous study was to achieve reproducible, pL-scale sample injections into PDMS microchannels. In the present study, we introduce an acupuncture injection technique combined with electrokinetic injection (AICEI) technique to inject pL-scale sample segments for microchip capillary electrophoresis. We carried out the capillary zone electrophoresis (CZE) separation of FITC and fluorescein, and the mixture of 10 μM FITC and 10 μM fluorescein was separated completely by using the AICEI method. PMID:28326222

  13. Hydrogen Gas as a Fuel in Direct Injection Diesel Engine

    Science.gov (United States)

    Dhanasekaran, Chinnathambi; Mohankumar, Gabriael

    2016-04-01

    Hydrogen is expected to be one of the most important fuels in the near future for solving the problem caused by the greenhouse gases, for protecting environment and saving conventional fuels. In this study, a dual fuel engine of hydrogen and diesel was investigated. Hydrogen was conceded through the intake port, and simultaneously air and diesel was pervaded into the cylinder. Using electronic gas injector and electronic control unit, the injection timing and duration varied. In this investigation, a single cylinder, KIRLOSKAR AV1, DI Diesel engine was used. Hydrogen injection timing was fixed at TDC and injection duration was timed for 30°, 60°, and 90° crank angles. The injection timing of diesel was fixed at 23° BTDC. When hydrogen is mixed with inlet air, emanation of HC, CO and CO2 decreased without any emission (exhaustion) of smoke while increasing the brake thermal efficiency.

  14. STRATEGY FOR DIESEL ROTARY ENGINE WITH COMMON RAIL INJECTION SYSTEM

    Institute of Scientific and Technical Information of China (English)

    WU Jinjun; HAI Jingtao; SHI Jianzhong; LI Xuesong; YANG Qing; WANG Shangyong

    2006-01-01

    A direct injection low compression ratios diesel rotary engine is designed and studied to find the appropriate application of the electronic controlled high pressure common rail injection system. Current development focuses on the applied fuel injection and ignition strategies, especially concerning the combustion configurations of injectors, ignition source, and combustion chamber. The prototype engine, equipped with Bosch common rail system and high performance electronic control unit (ECU), is designed correspondingly. Studies show that the integration of a common rail injection system and the main and pilot duel injectors configurations, assisted with glow plug ignition device and flexible ECU, represents a promising approach to improve the potential of the low compression ratios diesel rotary engine. Currently the engine can run at 6 kr · min-1 steadily and the power is about 68 kW/(4 kr · min-1).

  15. SQL Injection Defenses

    CERN Document Server

    Nystrom, Martin

    2007-01-01

    This Short Cut introduces you to how SQL injection vulnerabilities work, what makes applications vulnerable, and how to protect them. It helps you find your vulnerabilities with analysis and testing tools and describes simple approaches for fixing them in the most popular web-programming languages. This Short Cut also helps you protect your live applications by describing how to monitor for and block attacks before your data is stolen. Hacking is an increasingly criminal enterprise, and web applications are an attractive path to identity theft. If the applications you build, manage, or guar

  16. MKI UFOs at Injection

    CERN Document Server

    Baer, T; Bartmann, W; Bracco, C; Carlier, E; Chanavat, C; Drosdal, L; Garrel, N; Goddard, B; Kain, V; Mertens, V; Uythoven, J; Wenninger, J; Zerlauth, M

    2011-01-01

    During the MD, the production mechanism of UFOs at the injection kicker magnets (MKIs) was studied. This was done by pulsing the MKIs on a gap in the circulating beam, which led to an increased number of UFOs. In total 43 UFO type beam loss patterns at the MKIs were observed during the MD. The MD showed that pulsing the MKIs directly induces UFO type beam loss patterns. From the temporal characteristics of the loss profile, estimations about the dynamics of the UFOs are made.

  17. High-Compression-Ratio; Atkinson-Cycle Engine Using Low-Pressure Direct Injection and Pneumatic-Electronic Valve Actuation Enabled by Ionization Current and Foward-Backward Mass Air Flow Sensor Feedback

    Energy Technology Data Exchange (ETDEWEB)

    Harold Schock; Farhad Jaberi; Ahmed Naguib; Guoming Zhu; David Hung

    2007-12-31

    This report describes the work completed over a two and one half year effort sponsored by the US Department of Energy. The goal was to demonstrate the technology needed to produce a highly efficient engine enabled by several technologies which were to be developed in the course of the work. The technologies included: (1) A low-pressure direct injection system; (2) A mass air flow sensor which would measure the net airflow into the engine on a per cycle basis; (3) A feedback control system enabled by measuring ionization current signals from the spark plug gap; and (4) An infinitely variable cam actuation system based on a pneumatic-hydraulic valve actuation These developments were supplemented by the use of advanced large eddy simulations as well as evaluations of fuel air mixing using the KIVA and WAVE models. The simulations were accompanied by experimental verification when possible. In this effort a solid base has been established for continued development of the advanced engine concepts originally proposed. Due to problems with the valve actuation system a complete demonstration of the engine concept originally proposed was not possible. Some of the highlights that were accomplished during this effort are: (1) A forward-backward mass air flow sensor has been developed and a patent application for the device has been submitted. We are optimistic that this technology will have a particular application in variable valve timing direct injection systems for IC engines. (2) The biggest effort on this project has involved the development of the pneumatic-hydraulic valve actuation system. This system was originally purchased from Cargine, a Swedish supplier and is in the development stage. To date we have not been able to use the actuators to control the exhaust valves, although the actuators have been successfully employed to control the intake valves. The reason for this is the additional complication associated with variable back pressure on the exhaust valves when

  18. Evaluation of the impact of viscosity, injection volume, and injection flow rate on subcutaneous injection tolerance

    Directory of Open Access Journals (Sweden)

    Berteau C

    2015-11-01

    Full Text Available Cecile Berteau,1 Orchidée Filipe-Santos,1 Tao Wang,2 Humberto E Rojas,2 Corinne Granger,1 Florence Schwarzenbach1 1Becton-Dickinson Medical Pharmaceutical Systems, Le Pont de Claix, France; 2Eli Lilly and Company, Indianapolis, IN, USA Aim: The primary objective of this study was to evaluate the impact of fluid injection viscosity in combination with different injection volumes and flow rates on subcutaneous (SC injection pain tolerance. Methods: The study was a single-center, comparative, randomized, crossover, Phase I study in 24 healthy adults. Each participant received six injections in the abdomen area of either a 2 or 3 mL placebo solution, with three different fluid viscosities (1, 8–10, and 15–20 cP combined with two different injection flow rates (0.02 and 0.3 mL/s. All injections were performed with 50 mL syringes and 27G, 6 mm needles. Perceived injection pain was assessed using a 100 mm visual analog scale (VAS (0 mm/no pain, 100 mm/extreme pain. The location and depth of the injected fluid was assessed through 2D ultrasound echography images. Results: Viscosity levels had significant impact on perceived injection pain (P=0.0003. Specifically, less pain was associated with high viscosity (VAS =12.6 mm than medium (VAS =16.6 mm or low (VAS =22.1 mm viscosities, with a significant difference between high and low viscosities (P=0.0002. Target injection volume of 2 or 3 mL was demonstrated to have no significant impact on perceived injection pain (P=0.89. Slow (0.02 mL/s or fast (0.30 mL/s injection rates also showed no significant impact on perceived pain during SC injection (P=0.79. In 92% of injections, the injected fluid was located exclusively in SC tissue whereas the remaining injected fluids were found located in SC and/or intradermal layers. Conclusion: The results of this study suggest that solutions of up to 3 mL and up to 15–20 cP injected into the abdomen within 10 seconds are well tolerated without pain. High

  19. Active Stabilization of a Diode Laser Injection Lock

    CERN Document Server

    Saxberg, Brendan; Gupta, Subhadeep

    2016-01-01

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

  20. Active stabilization of a diode laser injection lock

    Science.gov (United States)

    Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

    2016-06-01

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.