SnO2 anode surface passivation by atomic layer deposited HfO2 improves li-ion battery performance

KAUST Repository

Yesibolati, Nulati

2014-03-14

For the first time, it is demonstrated that nanoscale HfO2 surface passivation layers formed by atomic layer deposition (ALD) significantly improve the performance of Li ion batteries with SnO2-based anodes. Specifically, the measured battery capacity at a current density of 150 mAg -1 after 100 cycles is 548 and 853 mAhg-1 for the uncoated and HfO2-coated anodes, respectively. Material analysis reveals that the HfO2 layers are amorphous in nature and conformably coat the SnO2-based anodes. In addition, the analysis reveals that ALD HfO2 not only protects the SnO2-based anodes from irreversible reactions with the electrolyte and buffers its volume change, but also chemically interacts with the SnO2 anodes to increase battery capacity, despite the fact that HfO2 is itself electrochemically inactive. The amorphous nature of HfO2 is an important factor in explaining its behavior, as it still allows sufficient Li diffusion for an efficient anode lithiation/delithiation process to occur, leading to higher battery capacity. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Self-diffusion of Er and Hf inpure and HfO2-doped polycrystalline Er2O3

International Nuclear Information System (INIS)

Scheidecker, R.W.

1979-01-01

Using a tracer technique, self-diffusion of Er and Hf was measured over the approximate temperature interval of 1600 to 1970 0 C in pure and HfO 2 -doped polycryatalline Er 2 O 3 . Up to about 10 m/o HfO 2 dopant level, the Er self-diffusion coefficients followed a relationship based on cation vacancies. Above 10 m/o HfO 2 , deviation from this relationship occurred, apparently due to clustering of cation vacancies and oxygen interstitials around the dopant hafnia ion. The activation energy for the self-diffusion of Er in pure Er 2 O 3 was 82.2 Kcal/mole and increased with the HfO 2 dopant level present. Self-diffusion of Hf was measured in pure Er 2 O 3 having two impurity levels, and a separation of the grain boundary. The volume diffusion of Hf showed both extrinsic and intrinsic behavior with the transition temperature increasing with the impurity level present in Er 2 O 3 . The activation energy for Hf volume diffusion in the intrinsic region was high, i.e. 235 -+ 9.5 Kcal/mole. The grain boundary diffusion was apparently extrinsic over the entire temperature interval Very low Hf self diffusion rates were found in both pure and HfO 2 doped Er 2 O 3 compositions. Despite a clustering effect, the HfO 2 dopant increased the Hf volume diffusion coefficients

Chemical states and electronic structure of a HfO(-2)/Ge(001) interface

International Nuclear Information System (INIS)

Seo, Kang-ill; McIntyre, Paul C.; Stanford U., Materials Sci. Dept.; Sun, Shiyu; Lee, Dong-Ick; Pianetta, Piero; SLAC, SSRL; Saraswat, Krishna C.; Stanford U., Elect. Eng. Dept.

2005-01-01

We report the chemical bonding structure and valence band alignment at the HfO 2 /Ge (001) interface by systematically probing various core level spectra as well as valence band spectra using soft x-rays at the Stanford Synchrotron Radiation Laboratory. We investigated the chemical bonding changes as a function of depth through the dielectric stack by taking a series of synchrotron photoemission spectra as we etched through the HfO 2 film using a dilute HF-solution. We found that a very non-stoichiometric GeO x layer exists at the HfO 2 /Ge interface. The valence band spectra near the Fermi level in each different film structure were carefully analyzed, and as a result, the valence band offset between Ge and GeO x was determined to be ΔE v (Ge-GeO x ) = 2.2 ± 0.15 eV, and that between Ge and HfO 2 , ΔE v (Ge-HfO 2 ) = 2.7 ± 0.15 eV

Optical properties of a HfO2/Si stack with a trace amount of nitrogen incorporation

Science.gov (United States)

Ye, Li; Tingting, Jiang; Qingqing, Sun; Pengfei, Wang; Shijin, Ding; Wei, Zhang

2012-03-01

HfO2 films were deposited by atomic layer deposition through alternating pulsing of Hf[N(C2H5)(CH3)]4 and H2O2. A trace amount of nitrogen was incorporated into the HfO2 through ammonia annealing. The composition, the interface stability of the HfO2/Si stack and the optical properties of the annealed films were analyzed to investigate the property evolution of HfO2 during thermal treatment. With a nitrogen concentration increase from 1.41 to 7.45%, the bandgap of the films decreased from 5.82 to 4.94 eV.

Mechanisms and selectivity for etching of HfO2 and Si in BCl3 plasmas

International Nuclear Information System (INIS)

Wang Chunyu; Donnelly, Vincent M.

2008-01-01

The authors have investigated plasma etching of HfO 2 , a high dielectric constant material, and poly-Si in BCl 3 plasmas. Etching rates were measured as a function of substrate temperature (T s ) at several source powers. Activation energies range from 0.2 to 1.0 kcal/mol for HfO 2 and from 0.8 to 1.8 kcal/mol for Si, with little or no dependence on source power (20-200 W). These low activation energies suggest that product removal is limited by chemical sputtering of the chemisorbed Hf or Si-containing layer, with a higher T s only modestly increasing the chemical sputtering rate. The slightly lower activation energy for HfO 2 results in a small improvement in selectivity over Si at low temperature. The surface layers formed on HfO 2 and Si after etching in BCl 3 plasmas were also investigated by vacuum-transfer x-ray photoelectron spectroscopy. A thin boron-containing layer was observed on partially etched HfO 2 and on poly-Si after etching through HfO 2 films. For HfO 2 , a single B(1s) feature at 194 eV was ascribed to a heavily oxidized species with bonding similar to B 2 O 3 . B(1s) features were observed for poly-Si surfaces at 187.6 eV (B bound to Si), 189.8 eV, and 193 eV (both ascribed to BO x Cl y ). In the presence of a deliberately added 0.5% air, the B-containing layer on HfO 2 is largely unaffected, while that on Si converts to a thick layer with a single B(1s) peak at 194 eV and an approximate stoichiometry of B 3 O 4 Cl

Suppression of interfacial reaction for HfO2 on silicon by pre-CF4 plasma treatment

International Nuclear Information System (INIS)

Lai, C.S.; Wu, W.C.; Chao, T.S.; Chen, J.H.; Wang, J.C.; Tay, L.-L.; Rowell, Nelson

2006-01-01

In this letter, the effects of pre-CF 4 plasma treatment on Si for sputtered HfO 2 gate dielectrics are investigated. The significant fluorine was incorporated at the HfO 2 /Si substrate interface for a sample with the CF 4 plasma pretreatment. The Hf silicide was suppressed and Hf-F bonding was observed for the CF 4 plasma pretreated sample. Compared with the as-deposited sample, the effective oxide thickness was much reduced for the pre-CF 4 plasma treated sample due to the elimination of the interfacial layer between HfO 2 and Si substrate. These improved characteristics of the HfO 2 gate dielectrics can be explained in terms of the fluorine atoms blocking oxygen diffusion through the HfO 2 film into the Si substrate

Difference in Thermal Degradation Behavior of ZrO2 and HfO2 Anodized Capacitors

Science.gov (United States)

Kamijyo, Masahiro; Onozuka, Tomotake; Yoshida, Naoto; Shinkai, Satoko; Sasaki, Katsutaka; Yamane, Misao; Abe, Yoshio

2004-09-01

Microcrystalline ZrO2 and HfO2 thin film capacitors were prepared by anodizing sputter-deposited Zr and Hf films. The thermal degradation behavior of both anodized capacitors was clarified by the measurement of their capacitance properties and Auger depth profiles before and after heat treatment in air. As a result, it is confirmed that the heat-resistance property of the HfO2 anodized capacitor is superior to that of the ZrO2 capacitor. In addition, it is revealed that the thermal degradation of the ZrO2 anodized capacitor is caused by the diffusion of Zr atoms from the underlying layer into the ZrO2 anodized layer, while that of the HfO2 anodized capacitor is caused by the diffusion of oxygen atoms from the anodized layer into the underlying Hf layer.

Al2O3 Passivation Effect in HfO2·Al2O3 Laminate Structures Grown on InP Substrates.

Science.gov (United States)

Kang, Hang-Kyu; Kang, Yu-Seon; Kim, Dae-Kyoung; Baik, Min; Song, Jin-Dong; An, Youngseo; Kim, Hyoungsub; Cho, Mann-Ho

2017-05-24

The passivation effect of an Al 2 O 3 layer on the electrical properties was investigated in HfO 2 -Al 2 O 3 laminate structures grown on indium phosphide (InP) substrate by atomic-layer deposition. The chemical state obtained using high-resolution X-ray photoelectron spectroscopy showed that interfacial reactions were dependent on the presence of the Al 2 O 3 passivation layer and its sequence in the HfO 2 -Al 2 O 3 laminate structures. Because of the interfacial reaction, the Al 2 O 3 /HfO 2 /Al 2 O 3 structure showed the best electrical characteristics. The top Al 2 O 3 layer suppressed the interdiffusion of oxidizing species into the HfO 2 films, whereas the bottom Al 2 O 3 layer blocked the outdiffusion of In and P atoms. As a result, the formation of In-O bonds was more effectively suppressed in the Al 2 O 3 /HfO 2 /Al 2 O 3 /InP structure than that in the HfO 2 -on-InP system. Moreover, conductance data revealed that the Al 2 O 3 layer on InP reduces the midgap traps to 2.6 × 10 12 eV -1 cm -2 (compared to that of HfO 2 /InP, that is, 5.4 × 10 12 eV -1 cm -2 ). The suppression of gap states caused by the outdiffusion of In atoms significantly controls the degradation of capacitors caused by leakage current through the stacked oxide layers.

TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

International Nuclear Information System (INIS)

Lomenzo, Patrick D.; Nishida, Toshikazu; Takmeel, Qanit; Zhou, Chuanzhen; Fancher, Chris M.; Jones, Jacob L.; Lambers, Eric; Rudawski, Nicholas G.; Moghaddam, Saeed

2015-01-01

Ferroelectric HfO 2 -based thin films, which can exhibit ferroelectric properties down to sub-10 nm thicknesses, are a promising candidate for emerging high density memory technologies. As the ferroelectric thickness continues to shrink, the electrode-ferroelectric interface properties play an increasingly important role. We investigate the TaN interface properties on 10 nm thick Si-doped HfO 2 thin films fabricated in a TaN metal-ferroelectric-metal stack which exhibit highly asymmetric ferroelectric characteristics. To understand the asymmetric behavior of the ferroelectric characteristics of the Si-doped HfO 2 thin films, the chemical interface properties of sputtered TaN bottom and top electrodes are probed with x-ray photoelectron spectroscopy. Ta-O bonds at the bottom electrode interface and a significant presence of Hf-N bonds at both electrode interfaces are identified. It is shown that the chemical heterogeneity of the bottom and top electrode interfaces gives rise to an internal electric field, which causes the as-grown ferroelectric domains to preferentially polarize to screen positively charged oxygen vacancies aggregated at the oxidized bottom electrode interface. Electric field cycling is shown to reduce the internal electric field with a concomitant increase in remanent polarization and decrease in relative permittivity. Through an analysis of pulsed transient switching currents, back-switching is observed in Si-doped HfO 2 thin films with pinched hysteresis loops and is shown to be influenced by the internal electric field

Analyses of desorbed H2O with temperature programmed desorption technique in sol-gel derived HfO2 thin films

International Nuclear Information System (INIS)

Shimizu, H.; Nemoto, D.; Ikeda, M.; Nishide, T.

2009-01-01

Hafnium oxide (HfO 2 ) is a promising material for the gate insulator in highly miniaturized silicon (Si) ultra-large-scale-integration (ULSI) devices (32 nm and beyond). In the field chemistry, a sol-gel processing has been used to fabricate HfO 2 thin film with the advantages of low cost, relative simplicity, and easy control of the composition of the layers formed. Temperature-programmed desorption (TPD) has been used not only for analyzing adsorbed gases on the surfaces of bulk sol-gel-derived HfO 2 of sol-gel-derived HfO 2 thin film fired at 350, 450, 550 and 700 deg C in sol-gel derived HfO 2 films in air is investigated using TPD, and also the material characterization of HfO 2 thin films is evaluated by X-ray diffraction (XRD) method. The dielectric constant of the films was also estimated using the capacitance-voltage (C-V) method. TPD is essentially a method of analyzing desorped gases from samples heated by infra-red light as a function of temperature under vacuum conditions using a detector of quadruple mass spectroscopy (QMS). Sol-gel-derived HfO 2 films were fabricated on 76-mm-diameter Si(100) wafers as follows. Hafnia sol solutions were prepared by dissolving HfCl 4 in NH 4 OH solution, followed by the of HCOOH. (author)

Nanomechanical study of amorphous and polycrystalline ALD HfO2 thin films

Science.gov (United States)

K. Tapily; J.E. Jakes; D. Gu; H. Baumgart; A.A. Elmustafa

2011-01-01

Thin films of hafnium oxide (HfO2) were deposited by atomic layer deposition (ALD). The structural properties of the deposited films were characterised by transmission electron microscopy (TEM) and X-ray diffraction (XRD). We investigated the effect of phase transformations induced by thermal treatments on the mechanical properties of ALD HfO

Pressure-induced phase transformation of HfO2

International Nuclear Information System (INIS)

Arashi, H.

1992-01-01

This paper reports on the pressure dependence of the Raman spectra of HfO 2 that was measured by a micro-Raman technique using a single-crystal specimen in the pressure range from 0 to 10 GPa at room temperature. The symmetry assignment of Raman bands of the monoclinic phase was experimentally accomplished from the polarization measurements for the single crystal. With increased pressure, a phase transformation for the monoclinic phase took place at 4.3 ± 0.3 GPa. Nineteen Raman bands were observed for the high-pressure phase. The spectral structure of the Raman bands for the high-pressure phase was similar with those reported previously for ZrO 2 . The space group for the high pressure phase of HfO 2 was determined as Pbcm, which was the same as that of the high-pressure phase for ZrO 2 on the basis of the number and the spectral structure of the Raman bands

High-temperature x-ray diffraction study of HfTiO4-HfO2 solid solutions

International Nuclear Information System (INIS)

Carpenter, D.A.

1975-01-01

High-temperature x-ray diffraction techniques were used to determine the axial thermal expansion curves of HfTiO 4 -HfO 2 solid solutions as a function of composition. Data show increasing anisotropy with increasing HfO 2 content. An orthorhombic-to-monoclinic phase transformation was detected near room temperature for compositions near the high HfO 2 end of the orthorhombic phase field and for compositions within the two-phase region (HfTiO 4 solid solution plus HfO 2 solid solution). An orthorhombic-to-cubic phase transformation is indicated by data from oxygen-deficient materials at greater than 1873 0 K. (U.S.)

Improved speed and data retention characteristics in flash memory using a stacked HfO2/Ta2O5 charge-trapping layer

International Nuclear Information System (INIS)

Zheng, Zhiwei; Huo, Zongliang; Zhang, Manhong; Zhu, Chenxin; Liu, Jing; Liu, Ming

2011-01-01

This paper reports the simultaneous improvements in erase speed and data retention characteristics in flash memory using a stacked HfO 2 /Ta 2 O 5 charge-trapping layer. In comparison to a memory capacitor with a single HfO 2 trapping layer, the erase speed of a memory capacitor with a stacked HfO 2 /Ta 2 O 5 charge-trapping layer is 100 times faster and its memory window is enlarged from 2.7 to 4.8 V for the same ±16 V sweeping voltage range. With the same initial window of ΔV FB = 4 V, the device with a stacked HfO 2 /Ta 2 O 5 charge-trapping layer has a 3.5 V extrapolated 10-year retention window, while the control device with a single HfO 2 trapping layer has only 2.5 V for the extrapolated 10-year window. The present results demonstrate that the device with the stacked HfO 2 /Ta 2 O 5 charge-trapping layer has a strong potential for future high-performance nonvolatile memory application

Photoemission study on electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces

International Nuclear Information System (INIS)

Fujimura, Nobuyuki; Ohta, Akio; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

2017-01-01

Electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces have been investigated by X-ray photoelectron spectroscopy (XPS) under monochromatized Al Kα radiation. From the analysis of the cut-off energy for secondary photoelectrons measured at each thinning step of a dielectric layer by wet-chemical etching, an abrupt potential change caused by electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces has been clearly detected. Al-gate MOS capacitors with thermally-grown SiO_2 and a HfO_2/SiO_2 dielectric stack were fabricated to evaluate the Al work function from the flat band voltage shift of capacitance-voltage (C-V) characteristics. Comparing the results of XPS and C-V measurements, we have verified that electrical dipole formed at the interface can be directly measured by photoemission measurements. (author)

Deep electron traps in HfO_2-based metal-oxide-semiconductor capacitors

International Nuclear Information System (INIS)

Salomone, L. Sambuco; Lipovetzky, J.; Carbonetto, S.H.; García Inza, M.A.; Redin, E.G.; Campabadal, F.

2016-01-01

Hafnium oxide (HfO_2) is currently considered to be a good candidate to take part as a component in charge-trapping nonvolatile memories. In this work, the electric field and time dependences of the electron trapping/detrapping processes are studied through a constant capacitance voltage transient technique on metal-oxide-semiconductor capacitors with atomic layer deposited HfO_2 as insulating layer. A tunneling-based model is proposed to reproduce the experimental results, obtaining fair agreement between experiments and simulations. From the fitting procedure, a band of defects is identified, located in the first 1.7 nm from the Si/HfO_2 interface at an energy level E_t = 1.59 eV below the HfO_2 conduction band edge with density N_t = 1.36 × 10"1"9 cm"−"3. A simplified analytical version of the model is proposed in order to ease the fitting procedure for the low applied voltage case considered in this work. - Highlights: • We characterized deep electron trapping/detrapping in HfO_2 structures. • We modeled the experimental results through a tunneling-based model. • We obtained an electron trap energy level of 1.59 eV below conduction band edge. • We obtained a spatial trap distribution extending 1.7 nm within the insulator. • A simplified tunneling front model is able to reproduce the experimental results.

Issues concerning the determination of solubility products of sparingly soluble crystalline solids. Solubility of HfO2(cr)

International Nuclear Information System (INIS)

Rai, Dhanpat; Kitamura, Akira; Rosso, Kevin M.; Sasaki, Takayuki; Kobayashi, Taishi

2016-01-01

Solubility studies were conducted with HfO 2 (cr) solid as a function HCl and ionic strength ranging from 2.0 to 0.004 mol kg -1 . These studies involved (1) using two different amounts of the solid phase, (2) acid washing the bulk solid phase, (3) preheating the solid phase to 1400 C, and (4) heating amorphous HfO 2 (am) suspensions to 90 C to ascertain whether the HfO 2 (am) converts to HfO 2 (cr) and to determine the solubility from the oversaturation direction. Based on the results of these treatments it is concluded that the HfO 2 (cr) contains a small fraction of less crystalline, but not amorphous, material [HfO 2 (lcr)] and this, rather than the HfO 2 (cr), is the solubility-controlling phase in the range of experimental variables investigated in this study. The solubility data are interpreted using both the Pitzer and SIT models and they provide log 10 K 0 values of -(59.75±0.35) and -(59.48±0.41), respectively, for the solubility product of HfO 2 (lcr)[HfO 2 (lcr) + 2H 2 O ↔ Hf 4+ + 4OH - ]. The log 10 of the solubility product of HfO 2 (cr) is estimated to be < -63. The observation of a small fraction of less crystalline higher solubility material is consistent with the general picture that mineral surfaces are often structurally and/or compositionally imperfect leading to a higher solubility than the bulk crystalline solid. This study stresses the urgent need, during interpretation of solubility data, of taking precautions to make certain that the observed solubility behavior for sparingly-soluble solids is assigned to the proper solid phase.

Structure and properties of a model conductive filament/host oxide interface in HfO2-based ReRAM

Science.gov (United States)

Padilha, A. C. M.; McKenna, K. P.

2018-04-01

Resistive random-access memory (ReRAM) is a promising class of nonvolatile memory capable of storing information via its resistance state. In the case of hafnium oxide-based devices, experimental evidence shows that a conductive oxygen-deficient filament is formed and broken inside of the device by oxygen migration, leading to switching of its resistance state. However, little is known about the nature of this conductive phase, its interface with the host oxide, or the associated interdiffusion of oxygen, presenting a challenge to understanding the switching mechanism and device properties. To address these problems, we present atomic-scale first-principles simulations of a prototypical conductive phase (HfO), the electronic properties of its interface with HfO2, as well as stability with respect to oxygen diffusion across the interface. We show that the conduction-band offset between HfO and HfO2 is 1.3 eV, smaller than typical electrode-HfO2 band offsets, suggesting that positive charging and band bending should occur at the conductive filament-HfO2 interface. We also show that transfer of oxygen across the interface, from HfO2 into HfO, costs around 1.2 eV per atom and leads to a gradual opening of the HfO band gap, and hence disruption of the electrical conductivity. These results provide invaluable insights into understanding the switching mechanism for HfO2-based ReRAM.

PAC study in the HfO2-SiO2 system

International Nuclear Information System (INIS)

Chain, C.Y.; Damonte, L.C.; Ferrari, S.; Munoz, E.; Torres, C. Rodriguez; Pasquevich, A.F.

2010-01-01

A high-k HfO 2 /SiO 2 gate stack is taking the place of SiO 2 as a gate dielectric in field effect transistors. This fact makes the study of the solid-state reaction between these oxides very important. Nanostructure characterization of a high-energy ball milled and post-annealed equimolar HfO 2 and amorphous SiO 2 powder mixture has been carried out by perturbed angular correlations (PAC) technique. The study was complemented with X-ray diffraction and positron annihilation lifetime spectroscopy (PALS). The experimental results revealed that the ball milling of equimolar mixtures increases the defects concentration in hafnium oxide. No solid-state reaction occurred even after 8 h of milling. The formation of HfSiO 4 (hafnon) was observed in the milled blends annealed at high temperatures.The PAC results of the milled samples are compared with those obtained for pure m-ZrO 2 subjected to high-energy ball milling and with reported microstructure data for the system ZrO 2 -SiO 2 .

Photo-induced tunneling currents in MOS structures with various HfO2/SiO2 stacking dielectrics

Directory of Open Access Journals (Sweden)

Chin-Sheng Pang

2014-04-01

Full Text Available In this study, the current conduction mechanisms of structures with tandem high-k dielectric in illumination are discussed. Samples of Al/SiO2/Si (S, Al/HfO2/SiO2/Si (H, and Al/3HfO2/SiO2/Si (3H were examined. The significant observation of electron traps of sample H compares to sample S is found under the double bias capacitance-voltage (C-V measurements in illumination. Moreover, the photo absorption sensitivity of sample H is higher than S due to the formation of HfO2 dielectric layer, which leads to larger numbers of carriers crowded through the sweep of VG before the domination of tunneling current. Additionally, the HfO2 dielectric layer would block the electrons passing through oxide from valance band, which would result in less electron-hole (e−-h+ pairs recombination effect. Also, it was found that both of the samples S and H show perimeter dependency of positive bias currents due to strong fringing field effect in dark and illumination; while sample 3H shows area dependency of positive bias currents in strong illumination. The non-uniform tunneling current through thin dielectric and through HfO2 stacking layers are importance to MOS(p tunneling photo diodes.

Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material

Directory of Open Access Journals (Sweden)

Yu-Hsien Lin

2014-01-01

Full Text Available This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using hafnium oxide (HfO2 gate dielectric material. HfO2 is an attractive candidate as a high-κ dielectric material for gate oxide because it has great potential to exhibit superior electrical properties with a high drive current. In the process of integrating the gate dielectric and IGZO thin film, postannealing treatment is an essential process for completing the chemical reaction of the IGZO thin film and enhancing the gate oxide quality to adjust the electrical characteristics of the TFTs. However, the hafnium atom diffused the IGZO thin film, causing interface roughness because of the stability of the HfO2 dielectric thin film during high-temperature annealing. In this study, the annealing temperature was optimized at 200°C for a HfO2 gate dielectric TFT exhibiting high mobility, a high ION/IOFF ratio, low IOFF current, and excellent subthreshold swing (SS.

Thermoluminescence in films of HfO2:Dy+3

International Nuclear Information System (INIS)

Ceron, P.; Rivera, T.; Guzman, J.; Montes, E.; Pelaez, A.; Rojas, B.; Guzman, D.; Azorin, J.; Paredes, L.

2014-08-01

In this work the thermoluminescence (TL) response of films of hafnium oxide polluted with dysprosium (HfO 2 :Dy +3 ) that were irradiated in the near UV (200 nm - 400 nm). The films were deposited by means of the ultrasonics spray pyrolysis technique on a glass substrate, using different deposit temperatures (300 grades C - 600 grades C). The best TL emission corresponded to the prepared film to 450 grades C that was exposed to a spectral irradiation of 80 μJ/(cm 2 -s) with a wave longitude of 240 nm. The TL response in function of the spectral irradiation was lineal in the studied interval (24 to 288 mJ/cm 2 ), several kinetic parameters were also calculated of the shine curve as depth of the trap (E), frequency factor (s) and order to the kinetics (b). The obtained results show that the films of HfO 2 :Dy +3 could be used as radiation monitor in the region of the near UV. (Author)

Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment

Science.gov (United States)

Yuan, Fang-Yuan; Deng, Ning; Shih, Chih-Cheng; Tseng, Yi-Ting; Chang, Ting-Chang; Chang, Kuan-Chang; Wang, Ming-Hui; Chen, Wen-Chung; Zheng, Hao-Xuan; Wu, Huaqiang; Qian, He; Sze, Simon M.

2017-10-01

A nitridation treatment technology with a urea/ammonia complex nitrogen source improved resistive switching property in HfO2-based resistive random access memory (RRAM). The nitridation treatment produced a high performance and reliable device which results in superior endurance (more than 109 cycles) and a self-compliance effect. Thus, the current conduction mechanism changed due to defect passivation by nitrogen atoms in the HfO2 thin film. At a high resistance state (HRS), it transferred to Schottky emission from Poole-Frenkel in HfO2-based RRAM. At low resistance state (LRS), the current conduction mechanism was space charge limited current (SCLC) after the nitridation treatment, which suggests that the nitrogen atoms form Hf-N-Ox vacancy clusters (Vo +) which limit electron movement through the switching layer.

MOHOS-type memory performance using HfO2 nanoparticles as charge trapping layer and low temperature annealing

International Nuclear Information System (INIS)

Molina, Joel; Ortega, Rafael; Calleja, Wilfrido; Rosales, Pedro; Zuniga, Carlos; Torres, Alfonso

2012-01-01

Highlights: ► HfO 2 nanoparticles used as charge trapping layer in MOHOS memory devices. ► Increasing HfO 2 nanoparticles concentration enhances charge injection and trapping. ► Enhancement of memory performance with low temperature annealing. ► Charge injection is done without using any hot-carrier injection mechanism. ► Using injected charge density is better for comparison of scaled memory devices. - Abstract: In this work, HfO 2 nanoparticles (np-HfO 2 ) are embedded within a spin-on glass (SOG)-based oxide matrix and used as a charge trapping layer in metal–oxide–high-k–oxide–silicon (MOHOS)-type memory applications. This charge trapping layer is obtained by a simple sol–gel spin coating method after using different concentrations of np-HfO 2 and low temperature annealing (down to 425 °C) in order to obtain charge–retention characteristics with a lower thermal budget. The memory's charge trapping characteristics are quantized by measuring both the flat-band voltage shift of MOHOS capacitors (writing/erasing operations) and their programming retention times after charge injection while correlating all these data to np-HfO 2 concentration and annealing temperature. Since a large memory window has been obtained for our MOHOS memory, the relatively easy injection/annihilation (writing/erasing) of charge injected through the substrate opens the possibility to use this material as an effective charge trapping layer. It is shown that by using lower annealing temperatures for the charge trapping layer, higher densities of injected charge are obtained along with enhanced retention times. In conclusion, by using np-HfO 2 as charge trapping layer in memory devices, moderate programming and retention characteristics have been obtained by this simple and yet low-cost spin-coating method.

Customized binary and multi-level HfO2-x-based memristors tuned by oxidation conditions.

Science.gov (United States)

He, Weifan; Sun, Huajun; Zhou, Yaxiong; Lu, Ke; Xue, Kanhao; Miao, Xiangshui

2017-08-30

The memristor is a promising candidate for the next generation non-volatile memory, especially based on HfO 2-x , given its compatibility with advanced CMOS technologies. Although various resistive transitions were reported independently, customized binary and multi-level memristors in unified HfO 2-x material have not been studied. Here we report Pt/HfO 2-x /Ti memristors with double memristive modes, forming-free and low operation voltage, which were tuned by oxidation conditions of HfO 2-x films. As O/Hf ratios of HfO 2-x films increase, the forming voltages, SET voltages, and R off /R on windows increase regularly while their resistive transitions undergo from gradually to sharply in I/V sweep. Two memristors with typical resistive transitions were studied to customize binary and multi-level memristive modes, respectively. For binary mode, high-speed switching with 10 3 pulses (10 ns) and retention test at 85 °C (>10 4 s) were achieved. For multi-level mode, the 12-levels stable resistance states were confirmed by ongoing multi-window switching (ranging from 10 ns to 1 μs and completing 10 cycles of each pulse). Our customized binary and multi-level HfO 2-x -based memristors show high-speed switching, multi-level storage and excellent stability, which can be separately applied to logic computing and neuromorphic computing, further suitable for in-memory computing chip when deposition atmosphere may be fine-tuned.

Phase Stability and Thermal Conductivity of Composite Environmental Barrier Coatings on SiC/SiC Ceramic Matrix Composites

Science.gov (United States)

Benkel, Samantha; Zhu, Dongming

2011-01-01

Advanced environmental barrier coatings are being developed to protect SiC/SiC ceramic matrix composites in harsh combustion environments. The current coating development emphasis has been placed on the significantly improved cyclic durability and combustion environment stability in high-heat-flux and high velocity gas turbine engine environments. Environmental barrier coating systems based on hafnia (HfO2) and ytterbium silicate, HfO2-Si nano-composite bond coat systems have been processed and their stability and thermal conductivity behavior have been evaluated in simulated turbine environments. The incorporation of Silicon Carbide Nanotubes (SiCNT) into high stability (HfO2) and/or HfO2-silicon composite bond coats, along with ZrO2, HfO2 and rare earth silicate composite top coat systems, showed promise as excellent environmental barriers to protect the SiC/SiC ceramic matrix composites.

Defect states and charge trapping characteristics of HfO2 films for high performance nonvolatile memory applications

International Nuclear Information System (INIS)

Zhang, Y.; Shao, Y. Y.; Lu, X. B.; Zeng, M.; Zhang, Z.; Gao, X. S.; Zhang, X. J.; Liu, J.-M.; Dai, J. Y.

2014-01-01

In this work, we present significant charge trapping memory effects of the metal-hafnium oxide-SiO 2 -Si (MHOS) structure. The devices based on 800 °C annealed HfO 2 film exhibit a large memory window of ∼5.1 V under ±10 V sweeping voltages and excellent charge retention properties with only small charge loss of ∼2.6% after more than 10 4  s retention. The outstanding memory characteristics are attributed to the high density of deep defect states in HfO 2 films. We investigated the defect states in the HfO 2 films by photoluminescence and photoluminescence excitation measurements and found that the defect states distributed in deep energy levels ranging from 1.1 eV to 2.9 eV below the conduction band. Our work provides further insights for the charge trapping mechanisms of the HfO 2 based MHOS devices.

Thermal expansion studies on HfO2-Gd2O3 system

International Nuclear Information System (INIS)

Panneerselvam, G.; Antony, M.P.; Nagarajan, K.

2014-01-01

A series of solid solutions containing GdO 1.5 in HfO 2 , (Hf 1-y Gd y ) O 2 (y = 0.15, 0.2, 0.3, 0.41 and 0.505) were prepared by solid state method. Structural characterization and computation of lattice parameter was carried out using room temperature X-ray diffraction measurements

Field-enhanced route to generating anti-Frenkel pairs in HfO2

Science.gov (United States)

Schie, Marcel; Menzel, Stephan; Robertson, John; Waser, Rainer; De Souza, Roger A.

2018-03-01

The generation of anti-Frenkel pairs (oxygen vacancies and oxygen interstitials) in monoclinic and cubic HfO2 under an applied electric field is examined. A thermodynamic model is used to derive an expression for the critical field strength required to generate an anti-Frenkel pair. The critical field strength of EaFcr˜101GVm-1 obtained for HfO2 exceeds substantially the field strengths routinely employed in the forming and switching operations of resistive switching HfO2 devices, suggesting that field-enhanced defect generation is negligible. Atomistic simulations with molecular static (MS) and molecular dynamic (MD) approaches support this finding. The MS calculations indicated a high formation energy of Δ EaF≈8 eV for the infinitely separated anti-Frenkel pair, and only a decrease to Δ EaF≈6 eV for the adjacent anti-Frenkel pair. The MD simulations showed no defect generation in either phase for E <3 GVm-1 , and only sporadic defect generation in the monoclinic phase (at E =3 GVm-1 ) with fast (trec<4 ps ) recombination. At even higher E but below EaFcr both monoclinic and cubic structures became unstable as a result of field-induced deformation of the ionic potential wells. Further MD investigations starting with preexisting anti-Frenkel pairs revealed recombination of all pairs within trec<1 ps , even for the case of neutral vacancies and charged interstitials, for which formally there is no electrostatic attraction between the defects. In conclusion, we find no physically reasonable route to generating point-defects in HfO2 by an applied field.

Development and Property Evaluation of Selected HfO2-Silicon and Rare Earth-Silicon Based Bond Coats and Environmental Barrier Coating Systems for SiC/SiC Ceramic Matrix Composites

Science.gov (United States)

Zhu, Dongming

2016-01-01

Ceramic environmental barrier coatings (EBC) and SiC/SiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft propulsion systems because of their ability to significantly increase engine operating temperatures, improve component durability, reduce engine weight and cooling requirements. Advanced EBC systems for SiC/SiC CMC turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant material development challenges for the high temperature CMC components is to develop prime-reliant, high strength and high temperature capable environmental barrier coating bond coat systems, since the current silicon bond coat cannot meet the advanced EBC-CMC temperature and stability requirements. In this paper, advanced NASA HfO2-Si and rare earth Si based EBC bond coat EBC systems for SiC/SiC CMC combustor and turbine airfoil applications are investigated. High temperature properties of the advanced EBC systems, including the strength, fracture toughness, creep and oxidation resistance have been studied and summarized. The advanced NASA EBC systems showed some promise to achieve 1500C temperature capability, helping enable next generation turbine engines with significantly improved engine component temperature capability and durability.

Phosphorus recovery from biogas slurry by ultrasound/H2O2 digestion coupled with HFO/biochar adsorption process.

Science.gov (United States)

He, Xuemeng; Zhang, Tao; Ren, Hongqiang; Li, Guoxue; Ding, Lili; Pawlowski, Lucjan

2017-02-01

Phosphorus (P) recovery from biogas slurry has recently attracted considerable interest. In this work, ultrasound/H 2 O 2 digestion coupled with ferric oxide hydrate/biochar (HFO/biochar) adsorption process was performed to promote P dissolution, release, and recovery from biogas slurry. The results showed that the optimal total phosphorus release efficiency was achieved at an inorganic phosphorus/total phosphorus ratio of 95.0% at pH 4, 1mL of added H 2 O 2 , and ultrasonication for 30min. The P adsorption by the HFO/biochar followed pseudo second-order kinetics and was mainly controlled by chemical processes. The Langmuir-Freundlich model matched the experimental data best for P adsorption by HFO/biochar at 298 and 308K, whereas the Freundlich model matched best at 318K. The maximum amount of P adsorbed was 220mg/g. The process was endothermic, spontaneous, and showed an increase in disorder at the solid-liquid interface. The saturated adsorbed HFO/biochar continually releases P and is most suitable for use in an alkaline environment. The amount of P released reached 29.1mg/g after five extractions. P mass balance calculation revealed that 11.3% of the total P can be made available. Copyright © 2016. Published by Elsevier Ltd.

Mechanical properties of ultra-thin HfO2 films studied by nano scratches tests

International Nuclear Information System (INIS)

Fu, Wei-En; Chang, Yong-Qing; Chang, Chia-Wei; Yao, Chih-Kai; Liao, Jiunn-Der

2013-01-01

10-nm-thick atomic layer deposited HfO 2 films were characterized in terms of wear resistance and indentation hardness to investigate the thermal annealing induced impacts on mechanical properties. The wear resistance of ultra-thin films at low loads was characterized using nano-scratch tests with an atomic force microscope. The depth of the nano-scratches decreases with increasing annealing temperature, indicating that the hardness of the annealed films increases with the annealing temperatures. Surface nanoindentation was also performed to confirm the nanoscratch test results. The hardness variation of the annealed films is due to the generation of HfSi x O y induced by the thermal annealing. X-ray photoelectron spectroscopy measurements proved that the hardness of formed HfSi x O y with increasing annealing temperatures. The existence of HfSi x O y broadens the interface, and causes the increase of the interfacial layer thickness. As a result, the surface hardness increases with the increasing HfSi x O y induced by the thermal annealing. - Highlights: ► Mechanical properties of HfO 2 films were assessed by nano-scratch and indentation. ► Scratch depth of HfO 2 films decreased with the increase of annealing temperatures. ► Nano-hardness of HfO 2 films increased with the increase of annealing temperatures

Effects of nitrogen incorporation in HfO(2) grown on InP by atomic layer deposition: an evolution in structural, chemical, and electrical characteristics.

Science.gov (United States)

Kang, Yu-Seon; Kim, Dae-Kyoung; Kang, Hang-Kyu; Jeong, Kwang-Sik; Cho, Mann-Ho; Ko, Dae-Hong; Kim, Hyoungsub; Seo, Jung-Hye; Kim, Dong-Chan

2014-03-26

We investigated the effects of postnitridation on the structural characteristics and interfacial reactions of HfO2 thin films grown on InP by atomic layer deposition (ALD) as a function of film thickness. By postdeposition annealing under NH3 vapor (PDN) at 600 °C, an InN layer formed at the HfO2/InP interface, and ionized NHx was incorporated in the HfO2 film. We demonstrate that structural changes resulting from nitridation of HfO2/InP depend on the film thickness (i.e., a single-crystal interfacial layer of h-InN formed at thin (2 nm) HfO2/InP interfaces, whereas an amorphous InN layer formed at thick (>6 nm) HfO2/InP interfaces). Consequently, the tetragonal structure of HfO2 transformed into a mixture structure of tetragonal and monoclinic because the interfacial InN layer relieved interfacial strain between HfO2 and InP. During postdeposition annealing (PDA) in HfO2/InP at 600 °C, large numbers of oxidation states were generated as a result of interfacial reactions between interdiffused oxygen impurities and out-diffused InP substrate elements. However, in the case of the PDN of HfO2/InP structures at 600 °C, nitrogen incorporation in the HfO2 film effectively blocked the out-diffusion of atomic In and P, thus suppressing the formation of oxidation states. Accordingly, the number of interfacial defect states (Dit) within the band gap of InP was significantly reduced, which was also supported by DFT calculations. Interfacial InN in HfO2/InP increased the electron-barrier height to ∼0.6 eV, which led to low-leakage-current density in the gate voltage region over 2 V.

Laser conditioning effect on HfO2/SiO2 film

International Nuclear Information System (INIS)

Wei Yaowei; Zhang Zhe; Liu Hao; Ouyang Sheng; Zheng Yi; Tang Gengyu; Chen Songlin; Ma Ping

2013-01-01

Laser conditioning is one of the important methods to improve the laser damage threshold of film optics. Firstly, a large aperture laser was used to irradiate the HfO 2 /SiO 2 reflectors, which were evaporated from hafnia and silica by e-beam. Secondly, a laser calorimeter was used to test the film absorption before and after laser irradiation. Focused ion beam (FIB) was few reported using on laser film, it was used to study the damage morphology and explore the cause of damage. The shooting of the partial ejection on nodule was obtained for the first time, which provided the basis for study the damage process. The results show that film absorption was decreased obviously after the laser irradiation, laser conditioning can raise the laser damage threshold by the 'cleaning mechanism'. For the HfO 2 /SiO 2 reflectors, laser conditioning was effective to eject the nodules on substrate. It resulted from the nodule residue not to affect the subsequent laser. In addition, laser conditioning was not effective to the nodule in the film, which might be from the material spatter in coating process. In this case, other method could be used to get rid of the nodules. (authors)

High-throughput identification of higher-κ dielectrics from an amorphous N2-doped HfO2–TiO2 library

International Nuclear Information System (INIS)

Chang, K.-S.; Lu, W.-C.; Wu, C.-Y.; Feng, H.-C.

2014-01-01

Highlights: • Amorphous N 2 -doped HfO 2 –TiO 2 libraries were fabricated using sputtering. • Structure and quality of the dielectric and interfacial layers were investigated. • κ (54), J L < 10 −6 A/cm 2 , and equivalent oxide thickness (1 nm) were identified. - Abstract: High-throughput sputtering was used to fabricate high-quality, amorphous, thin HfO 2 –TiO 2 and N 2 -doped HfO 2 –TiO 2 (HfON–TiON) gate dielectric libraries. Electron probe energy dispersive spectroscopy was used to investigate the structures, compositions, and qualities of the dielectric and interfacial layers of these libraries to determine their electrical properties. A κ value of approximately 54, a leakage current density <10 −6 A/cm 2 , and an equivalent oxide thickness of approximately 1 nm were identified in an HfON–TiON library within a composition range of 68–80 at.% Ti. This library exhibits promise for application in highly advanced metal–oxide–semiconductor (higher-κ) gate stacks

Silicon surface passivation using thin HfO2 films by atomic layer deposition

International Nuclear Information System (INIS)

Gope, Jhuma; Vandana; Batra, Neha; Panigrahi, Jagannath; Singh, Rajbir; Maurya, K.K.; Srivastava, Ritu; Singh, P.K.

2015-01-01

Graphical abstract: - Highlights: • HfO 2 films using thermal ALD are studied for silicon surface passivation. • As-deposited thin film (∼8 nm) shows better passivation with surface recombination velocity (SRV) <100 cm/s. • Annealing improves passivation quality with SRV ∼20 cm/s for ∼8 nm film. - Abstract: Hafnium oxide (HfO 2 ) is a potential material for equivalent oxide thickness (EOT) scaling in microelectronics; however, its surface passivation properties particularly on silicon are not well explored. This paper reports investigation on passivation properties of thermally deposited thin HfO 2 films by atomic layer deposition system (ALD) on silicon surface. As-deposited pristine film (∼8 nm) shows better passivation with <100 cm/s surface recombination velocity (SRV) vis-à-vis thicker films. Further improvement in passivation quality is achieved with annealing at 400 °C for 10 min where the SRV reduces to ∼20 cm/s. Conductance measurements show that the interface defect density (D it ) increases with film thickness whereas its value decreases after annealing. XRR data corroborate with the observations made by FTIR and SRV data.

Influence of O2 flow rate on HfO2 gate dielectrics for back-gated graphene transistors

International Nuclear Information System (INIS)

Ganapathi, Kolla Lakshmi; Bhat, Navakanta; Mohan, Sangeneni

2014-01-01

HfO 2  thin films deposited on Si substrate using electron beam evaporation, are evaluated for back-gated graphene transistors. The amount of O 2  flow rate, during evaporation is optimized for 35 nm thick HfO 2  films, to achieve the best optical, chemical and electrical properties. It has been observed that with increasing oxygen flow rate, thickness of the films increased and refractive index decreased due to increase in porosity resulting from the scattering of the evaporant. The films deposited at low O 2  flow rates (1 and 3 SCCM) show better optical and compositional properties. The effects of post-deposition annealing and post-metallization annealing in forming gas ambience (FGA) on the optical and electrical properties of the films have been analyzed. The film deposited at 3 SCCM O 2  flow rate shows the best properties as measured on MOS capacitors. To evaluate the performance of device properties, back-gated bilayer graphene transistors on HfO 2  films deposited at two O 2  flow rates of 3 and 20 SCCM have been fabricated and characterized. The transistor with HfO 2  film deposited at 3 SCCM O 2  flow rate shows better electrical properties consistent with the observations on MOS capacitor structures. This suggests that an optimum oxygen pressure is necessary to get good quality films for high performance devices. (paper)

Enhancement of Endurance in HfO2-Based CBRAM Device by Introduction of a TaN Diffusion Blocking Layer

KAUST Repository

Chand, Umesh

2017-08-05

We propose a new method to improve resistive switching properties in HfO2 based CBRAM crossbar structure device by introducing a TaN thin diffusion blocking layer between the Cu top electrode and HfO2 switching layer. The Cu/TaN/HfO2/TiN device structure exhibits high resistance ratio of OFF/ON states without any degradation in switching during endurance test. The improvement in the endurance properties of the Cu/TaN/HfO2/TiN CBRAM device is thus attributed to the relatively low amount of Cu migration into HfO2 switching layer.

Investigation of various properties of HfO2-TiO2 thin film composites deposited by multi-magnetron sputtering system

Science.gov (United States)

Mazur, M.; Poniedziałek, A.; Kaczmarek, D.; Wojcieszak, D.; Domaradzki, J.; Gibson, D.

2017-11-01

In this work the properties of hafnium dioxide (HfO2), titanium dioxide (TiO2) and mixed HfO2-TiO2 thin films with various amount of titanium addition, deposited by magnetron sputtering were described. Structural, surface, optical and mechanical properties of deposited coatings were analyzed. Based on X-ray diffraction and Raman scattering measuremets it was observed that there was a significant influence of titanium concentration in mixed TiO2-HfO2 thin films on their microstructure. Increase of Ti content in prepared mixed oxides coatings caused, e.g. a decrease of average crystallite size and amorphisation of the coatings. As-deposited hafnia and titania thin films exhibited nanocrystalline structure of monoclinic phase and mixed anatase-rutile phase for HfO2 and TiO2 thin films, respectively. Atomic force microscopy investigations showed that the surface of deposited thin films was densely packed, crack-free and composed of visible grains. Surface roughness and the value of water contact angle decreased with the increase of Ti content in mixed oxides. Results of optical studies showed that all deposited thin films were well transparent in a visible light range. The effect of the change of material composition on the cut-off wavelength, refractive index and packing density was also investigated. Performed measurements of mechanical properties revealed that hardness and Young's elastic modulus of thin films were dependent on material composition. Hardness of thin films increased with an increase of Ti content in thin films, from 4.90 GPa to 13.7 GPa for HfO2 and TiO2, respectively. The results of the scratch resistance showed that thin films with proper material composition can be used as protective coatings in optical devices.

Characterization of luminescent samarium doped HfO2 coatings synthesized by spray pyrolysis technique

International Nuclear Information System (INIS)

Chacon-Roa, C; Guzman-Mendoza, J; Aguilar-Frutis, M; Garcia-Hipolito, M; Alvarez-Fragoso, O; Falcony, C

2008-01-01

Trivalent samarium (Sm 3+ ) doped hafnium oxide (HfO 2 ) films were deposited using the spray pyrolysis deposition technique. The films were deposited on Corning glass substrates at temperatures ranging from 300 to 550 deg. C using chlorides as raw materials. Films, mostly amorphous, were obtained when deposition temperatures were below 350 deg. C. However, for temperatures higher than 400 deg. C, the films became polycrystalline, presenting the HfO 2 monoclinic phase. Scanning electron microscopy of the films revealed a rough surface morphology with spherical particles. Also, electron energy dispersive analysis was performed on these films. The photoluminescence and cathodoluminescence characteristics of the HfO 2 : SmCl 3 films, measured at room temperature, exhibited four main bands centred at 570, 610, 652 and 716 nm, which are due to the well-known intra-4f transitions of the Sm 3+ ion. It was found that the overall emission intensity rose as the deposition temperature was increased. Furthermore, a concentration quenching of the luminescence intensity was also observed

Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material

OpenAIRE

Lin, Yu-Hsien; Chou, Jay-Chi

2014-01-01

This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) using hafnium oxide (HfO2) gate dielectric material. HfO2 is an attractive candidate as a high-κ dielectric material for gate oxide because it has great potential to exhibit superior electrical properties with a high drive current. In the process of integrating the gate dielectric and IGZO thin film, postannealing treatment is an essential process for completing the chem...

Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO2: A first principles study

Science.gov (United States)

Materlik, Robin; Künneth, Christopher; Falkowski, Max; Mikolajick, Thomas; Kersch, Alfred

2018-04-01

III-valent dopants have shown to be most effective in stabilizing the ferroelectric, crystalline phase in atomic layer deposited, polycrystalline HfO2 thin films. On the other hand, such dopants are commonly used for tetragonal and cubic phase stabilization in ceramic HfO2. This difference in the impact has not been elucidated so far. The prospect is a suitable doping to produce ferroelectric HfO2 ceramics with a technological impact. In this paper, we investigate the impact of Al, Y, and La doping, which have experimentally proven to stabilize the ferroelectric Pca21 phase in HfO2, in a comprehensive first-principles study. Density functional theory calculations reveal the structure, formation energy, and total energy of various defects in HfO2. Most relevant are substitutional electronically compensated defects without oxygen vacancy, substitutional mixed compensated defects paired with a vacancy, and ionically compensated defect complexes containing two substitutional dopants paired with a vacancy. The ferroelectric phase is strongly favored with La and Y in the substitutional defect. The mixed compensated defect favors the ferroelectric phase as well, but the strongly favored cubic phase limits the concentration range for ferroelectricity. We conclude that a reduction of oxygen vacancies should significantly enhance this range in Y doped HfO2 thin films. With Al, the substitutional defect hardly favors the ferroelectric phase before the tetragonal phase becomes strongly favored with the increasing concentration. This could explain the observed field induced ferroelectricity in Al-doped HfO2. Further Al defects are investigated, but do not favor the f-phase such that the current explanation remains incomplete for Al doping. According to the simulation, doping alone shows clear trends, but is insufficient to replace the monoclinic phase as the ground state. To explain this fact, some other mechanism is needed.

The influence of thermal treatment on the phase development in HfO2-Al2O3 and ZrO2-Al2O3 systems

International Nuclear Information System (INIS)

Stefanic, G.; Music, S.; Trojko, R.

2005-01-01

Amorphous precursors of HfO 2 -AlO 1.5 and ZrO 2 -AlO 1.5 systems covering the whole concentration range were co-precipitated from aqueous solutions of the corresponding salts. The thermal behaviour of the amorphous precursors was examined by differential thermal analysis, X-ray powder diffraction (XRD), laser Raman spectroscopy and scanning electron microscopy. The crystallization temperature of both systems increased with increase in the AlO 1.5 content, from 530 to 940 deg. C in the HfO 2 -AlO 1.5 system, and from 405 to 915 deg. C in the ZrO 2 -AlO 1.5 system. The results of phase analysis indicate an extended capability for the incorporation of Al 3+ ions in the metastable HfO 2 - and ZrO 2 -type solid solutions obtained after crystallization of amorphous co-gels. Precise determination of lattice parameters, performed using whole-powder-pattern decomposition method, showed that the axial ratio c f /a f in the ZrO 2 - and HfO 2 -type solid solutions with 10 mol% or more of Al 3+ approach 1. The tetragonal symmetry of these samples, as determined by laser Raman spectroscopy, was attributed to the displacement of the oxygen sublattice from the ideal fluorite positions. It was found that the lattice parameters of the ZrO 2 -type solid solutions decreased with increasing Al 3+ content up to ∼10 mol%, whereas above 10 mol%, further increase of the Al 3+ content has very small influence on the unit-cell volume of both HfO 2 - and ZrO 2 -type solid solutions. The reason for such behaviour was discussed. The solubility of Hf 4+ and Zr 4+ ions in the aluminium oxides lattice appeared to be negligible

Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System.

Science.gov (United States)

Zhang, Xiao-Ying; Hsu, Chia-Hsun; Lien, Shui-Yang; Chen, Song-Yan; Huang, Wei; Yang, Chih-Hsiang; Kung, Chung-Yuan; Zhu, Wen-Zhang; Xiong, Fei-Bing; Meng, Xian-Guo

2017-12-01

Hafnium oxide (HfO 2 ) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, particularly on crystalline silicon (c-Si), have rarely been reported upon. In this study, the HfO 2 thin films were deposited on c-Si substrates with and without oxygen plasma pretreatments, using a remote plasma atomic layer deposition system. Post-annealing was performed using a rapid thermal processing system at different temperatures in N 2 ambient for 10 min. The effects of oxygen plasma pretreatment and post-annealing on the properties of the HfO 2 thin films were investigated. They indicate that the in situ remote plasma pretreatment of Si substrate can result in the formation of better SiO 2 , resulting in a better chemical passivation. The deposited HfO 2 thin films with oxygen plasma pretreatment and post-annealing at 500 °C for 10 min were effective in improving the lifetime of c-Si (original lifetime of 1 μs) to up to 67 μs.

HfO2 and SiO2 as barriers in magnetic tunneling junctions

Science.gov (United States)

Shukla, Gokaran; Archer, Thomas; Sanvito, Stefano

2017-05-01

SiO2 and HfO2 are both high-k, wide-gap semiconductors, currently used in the microelectronic industry as gate barriers. Here we investigate whether the same materials can be employed to make magnetic tunnel junctions, which in principle can be amenable for integration in conventional Si technology. By using a combination of density functional theory and the nonequilibrium Green's functions method for quantum transport we have studied the transport properties of Co [0001 ] /SiO2[001 ] /Co [0001 ] and Fe [001 ] /HfO2[001 ] /Fe [001 ] junctions. In both cases we found a quite large magnetoresistance, which is explained through the analysis of the real band structure of the magnets and the complex one of the insulator. We find that there is no symmetry spin filtering for the Co-based junction since the high transmission Δ2' band crosses the Fermi level, EF, for both spin directions. However, the fact that Co is a strong ferromagnet makes the orbital contribution to the two Δ2' spin subbands different, yielding magnetoresistance. In contrast for the Fe-based junction symmetry filtering is active for an energy window spanning between the Fermi level and 1 eV below EF, with Δ1 symmetry contributing to the transmission.

Effects of annealing temperature on the characteristics of ALD-deposited HfO2 in MIM capacitors

International Nuclear Information System (INIS)

Jeong, S.-W.; Lee, H.J.; Kim, K.S.; You, M.T.; Roh, Y.; Noguchi, T.; Xianyu, W.; Jung, J.

2006-01-01

We have investigated the annealing effects of HfO 2 films deposited by an atomic layer deposition (ALD) method on the electrical and physical properties in the Si/SiO 2 /Pt/ALD-HfO 2 /Pd metal-insulator-metal (MIM) capacitors. If the annealing temperature for HfO 2 films was restricted below 500 deg. C, an annealing step using a rapid thermal processor (RTP) improves the electrical properties such as the dissipation factor and the dielectric constant. On the other hand, annealing at 700 deg. C degrades the electrical characteristics in general; the dissipation factor increases over the frequency range of 1∼4 MHz, and the leakage current increases up to 2 orders at the low electric field regions. We found that the degradation of electrical properties is due to the grain growth in the HfO 2 film (i.e., poly-crystallization of the film) by the high temperature annealing processing. We suggested that the annealing temperature must be restricted below 500 deg. C to obtain the high quality high-k film for the MIM capacitors

Effect of heat treatment on properties of HfO2 film deposited by ion-beam sputtering

Science.gov (United States)

Liu, Huasong; Jiang, Yugang; Wang, Lishuan; Li, Shida; Yang, Xiao; Jiang, Chenghui; Liu, Dandan; Ji, Yiqin; Zhang, Feng; Chen, Deying

2017-11-01

The effects of atmosphere heat treatment on optical, stress, and microstructure properties of an HfO2 film deposited by ion-beam sputtering were systematically researched. The relationships among annealing temperature and refractive index, extinction coefficient, physical thickness, forbidden-band width, tape trailer width, Urbach energy, crystal phase structure, and stress were assessed. The results showed that 400 °C is the transformation point, and the microstructure of the HfO2 film changed from an amorphous into mixed-phase structure. Multistage phonons appeared on the HfO2 film, and the trends of the refractive index, extinction coefficient, forbidden-band width change, and Urbach energy shifted from decrease to increase. With the elevation of the annealing temperature, the film thickness increased monotonously, the compressive stress gradually turned to tensile stress, and the transformation temperature point for the stress was between 200 °C and 300 °C. Therefore, the change in the stress is the primary cause for the shifts in thin-film thickness.

Properties of phases in HfO2-TiO2 system

International Nuclear Information System (INIS)

Red'ko, V.P.; Terekhovskij, P.B.; Majster, I.M.; Shevchenko, A.V.; Lopato, L.M.; Dvernyakova, A.A.

1990-01-01

A study was made on axial and linear coefficients of thermal expansion (CTE) of HfO 2 -TiO 2 system samples in concentration range of 25-50 mol% TiO 2 . Samples, containing 35 and 37 mol% TiO 2 , are characterized by the lowest values of linear CTE. Dispersion of the basic substances doesn't affect CTE value. Correlation with axial and linear CTE of samples in ZrO 2 -TiO 2 system was conducted. Presence of anisotropy of change of lattice parameters was supported for samples, containing 37.5 and 40 mol% TiO 2 . Polymorphous transformations for hafnium titanate were not revealed

Theoretical prediction of ion conductivity in solid state HfO2

Science.gov (United States)

Zhang, Wei; Chen, Wen-Zhou; Sun, Jiu-Yu; Jiang, Zhen-Yi

2013-01-01

A theoretical prediction of ion conductivity for solid state HfO2 is carried out in analogy to ZrO2 based on the density functional calculation. Geometric and electronic structures of pure bulks exhibit similarity for the two materials. Negative formation enthalpy and negative vacancy formation energy are found for YSH (yttria-stabilized hafnia) and YSZ (yttria-stabilized zirconia), suggesting the stability of both materials. Low activation energies (below 0.7 eV) of diffusion are found in both materials, and YSH's is a little higher than that of YSZ. In addition, for both HfO2 and ZrO2, the supercells with native oxygen vacancies are also studied. The so-called defect states are observed in the supercells with neutral and +1 charge native vacancy but not in the +2 charge one. It can give an explanation to the relatively lower activation energies of yttria-doped oxides and +2 charge vacancy supercells. A brief discussion is presented to explain the different YSH ion conductivities in the experiment and obtained by us, and we attribute this to the different ion vibrations at different temperatures.

Insights into thermal diffusion of germanium and oxygen atoms in HfO2/GeO2/Ge gate stacks and their suppressed reaction with atomically thin AlOx interlayers

International Nuclear Information System (INIS)

Ogawa, Shingo; Asahara, Ryohei; Minoura, Yuya; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji; Sako, Hideki; Kawasaki, Naohiko; Yamada, Ichiko; Miyamoto, Takashi

2015-01-01

The thermal diffusion of germanium and oxygen atoms in HfO 2 /GeO 2 /Ge gate stacks was comprehensively evaluated by x-ray photoelectron spectroscopy and secondary ion mass spectrometry combined with an isotopic labeling technique. It was found that 18 O-tracers composing the GeO 2 underlayers diffuse within the HfO 2 overlayers based on Fick's law with the low activation energy of about 0.5 eV. Although out-diffusion of the germanium atoms through HfO 2 also proceeded at the low temperatures of around 200 °C, the diffusing germanium atoms preferentially segregated on the HfO 2 surfaces, and the reaction was further enhanced at high temperatures with the assistance of GeO desorption. A technique to insert atomically thin AlO x interlayers between the HfO 2 and GeO 2 layers was proven to effectively suppress both of these independent germanium and oxygen intermixing reactions in the gate stacks

Effect of Advanced Plasma Source bias voltage on properties of HfO2 films prepared by plasma ion assisted electron evaporation from metal hafnium

International Nuclear Information System (INIS)

Zhu, Meiping; Yi, Kui; Arhilger, Detlef; Qi, Hongji; Shao, Jianda

2013-01-01

HfO 2 films, using metal hafnium as starting material, are deposited by plasma-ion assisted electron evaporation with different Advanced Plasma Source (APS) bias voltages. The refractive index and extinction coefficient are calculated, the chemical state and composition, as well as the stress and aging behavior is investigated. Laser induced damage threshold (LIDT) and damage mechanism are also evaluated and discussed. Optical, structural, mechanical and laser induced damage properties of HfO 2 films are found to be sensitive to APS bias voltage. The film stress can be tuned by varying the APS bias voltage. Damage morphologies indicate the LIDT of the HfO 2 films at 1064 nm and 532 nm are dominated by the nodular-defect density in coatings, while the 355 nm LIDT is dominated by the film absorption. HfO 2 films with higher 1064 nm LIDT than samples evaporated from hafnia are achieved with bias voltage of 100 V. - Highlights: • HfO 2 films are evaporated with different Advanced Plasma Source (APS) bias voltages. • Properties of HfO 2 films are sensitive to APS bias voltage. • With a bias voltage of 100 V, HfO 2 coatings without any stress can be achieved. • Higher 1064 nm laser induced damage threshold is achieved at a bias voltage of 100 V

Electrical characterization of ALD HfO2 high-k dielectrics on ( 2 ¯ 01) β-Ga2O3

Science.gov (United States)

Shahin, David I.; Tadjer, Marko J.; Wheeler, Virginia D.; Koehler, Andrew D.; Anderson, Travis J.; Eddy, Charles R.; Christou, Aris

2018-01-01

The electrical quality of HfO2 dielectrics grown by thermal atomic layer deposition at 175 °C on n-type ( 2 ¯ 01) β-Ga2O3 has been studied through capacitance- and current-voltage measurements on metal-oxide-semiconductor capacitors. These capacitors exhibited excellent electrical characteristics, including dual-sweep capacitance-voltage curves with low hysteresis and stretch-out and a frequency-stable dielectric constant of k˜14 when measured between 10 kHz and 1 MHz. The C-V curves exhibited a uniform and repeatable +1.05 V shift relative to the ideal case when swept from 3.5 to -5 V, yielding positively measured flatband (+2.15 V) and threshold (+1.05 V) voltages that may be useful for normally off n-channel Ga2O3 devices. Using the Terman method, an average interface trap density of 1.3 × 1011 cm-2.eV-1 was obtained between 0.2 and 0.6 eV below the conduction band edge. The forward bias current-voltage characteristic was successfully fitted to the Fowler-Nordheim tunneling model at a field strength of 5 MV/cm, allowing an extraction of a 1.3 eV conduction band offset between HfO2 and Ga2O3, which matches the value previously determined from x-ray photoelectron spectroscopy. However, a temperature dependence in the leakage current was observed. These results suggest that HfO2 is an appealing dielectric for Ga2O3 device applications.

Energy-band alignment of (HfO2)x(Al2O3)1-x gate dielectrics deposited by atomic layer deposition on β-Ga2O3 (-201)

Science.gov (United States)

Yuan, Lei; Zhang, Hongpeng; Jia, Renxu; Guo, Lixin; Zhang, Yimen; Zhang, Yuming

2018-03-01

Energy band alignments between series band of Al-rich high-k materials (HfO2)x(Al2O3)1-x and β-Ga2O3 are investigated using X-Ray Photoelectron Spectroscopy (XPS). The results exhibit sufficient conduction band offsets (1.42-1.53 eV) in (HfO2)x(Al2O3)1-x/β-Ga2O3. In addition, it is also obtained that the value of Eg, △Ec, and △Ev for (HfO2)x(Al2O3)1-x/β-Ga2O3 change linearly with x, which can be expressed by 6.98-1.27x, 1.65-0.56x, and 0.48-0.70x, respectively. The higher dielectric constant and higher effective breakdown electric field of (HfO2)x(Al2O3)1-x compared with Al2O3, coupled with sufficient barrier height and lower gate leakage makes it a potential dielectric for high voltage β-Ga2O3 power MOSFET, and also provokes interest in further investigation of HfAlO/β-Ga2O3 interface properties.

HfO2 as gate dielectric on Ge: Interfaces and deposition techniques

International Nuclear Information System (INIS)

Caymax, M.; Van Elshocht, S.; Houssa, M.; Delabie, A.; Conard, T.; Meuris, M.; Heyns, M.M.; Dimoulas, A.; Spiga, S.; Fanciulli, M.; Seo, J.W.; Goncharova, L.V.

2006-01-01

To fabricate MOS gate stacks on Ge, one can choose from a multitude of metal oxides as dielectric material which can be deposited by many chemical or physical vapor deposition techniques. As a few typical examples, we will discuss here the results from atomic layer deposition (ALD), metal organic CVD (MOCVD) and molecular beam deposition (MBD) using HfO 2 /Ge as materials model system. It appears that a completely interface layer free HfO 2 /Ge combination can be made in MBD, but this results in very bad capacitors. The same bad result we find if HfGe y (Hf germanides) are formed like in the case of MOCVD on HF-dipped Ge. A GeO x interfacial layer appears to be indispensable (if no other passivating materials are applied), but the composition of this interfacial layer (as determined by XPS, TOFSIMS and MEIS) is determining for the C/V quality. On the other hand, the presence of Ge in the HfO 2 layer is not the most important factor that can be responsible for poor C/V, although it can still induce bumps in C/V curves, especially in the form of germanates (Hf-O-Ge). We find that most of these interfacial GeO x layers are in fact sub-oxides, and that this could be (part of) the explanation for the high interfacial state densities. In conclusion, we find that the Ge surface preparation is determining for the gate stack quality, but it needs to be adapted to the specific deposition technique

Oxygen vacancy effects in HfO2-based resistive switching memory: First principle study

Directory of Open Access Journals (Sweden)

Yuehua Dai

2016-08-01

Full Text Available The work investigated the shape and orientation of oxygen vacancy clusters in HfO2-base resistive random access memory (ReRAM by using the first-principle method based on the density functional theory. Firstly, the formation energy of different local Vo clusters was calculated in four established orientation systems. Then, the optimized orientation and charger conductor shape were identified by comparing the isosurface plots of partial charge density, formation energy, and the highest isosurface value of oxygen vacancy. The calculated results revealed that the [010] orientation was the optimal migration path of Vo, and the shape of system D4 was the best charge conductor in HfO2, which effectively influenced the SET voltage, formation voltage and the ON/OFF ratio of the device. Afterwards, the PDOS of Hf near Vo and total density of states of the system D4_010 were obtained, revealing the composition of charge conductor was oxygen vacancy instead of metal Hf. Furthermore, the migration barriers of the Vo hopping between neighboring unit cells were calculated along four different orientations. The motion was proved along [010] orientation. The optimal circulation path for Vo migration in the HfO2 super-cell was obtained.

Study of structure and antireflective properties of LaF3/HfO2/SiO2 and LaF3/HfO2/MgF2 trilayers for UV applications

Science.gov (United States)

Marszalek, K.; Jaglarz, J.; Sahraoui, B.; Winkowski, P.; Kanak, J.

2015-01-01

The aim of this paper is to study antireflective properties of the tree-layer systems LaF3/HfO2/SiO2 and LaF3/HfO2/MgF2 deposited on heated optical glass substrates. The films were evaporated by the use two deposition techniques. In first method oxide films were prepared by means of e-gun evaporation in vacuum of 5 × 10-5 mbar in the presence of oxygen. The second was used for the deposition of fluoride films. They were obtained by means of thermal source evaporation. Simulation of reflectance was performed for 1M2H1L (Quarter Wavelength Optical Thickness) film stack on an optical quartz glass with the refractive index n = 1.46. The layer thickness was optimized to achieve the lowest light scattering from glass surface covered with dioxide and fluoride films. The values of the interface roughness were determined through atomic force microscopy measurements. The essence of performed calculation was to find minimum reflectance of light in wide ultraviolet region. The spectral dispersion of the refractive index needed for calculations was determined from ellipsometric measurements using the spectroscopic ellipsometer M2000. Additionally, the total reflectance measurements in integrating sphere coupled with Perkin Elmer 900 spectrophotometer were performed. These investigations allowed to determine the influence of such film features like surface and interface roughness on light scattering.

Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO2/TiSi2 18 nm PMOS

Directory of Open Access Journals (Sweden)

Atan N.

2016-01-01

Full Text Available Manufacturing a 18-nm transistor requires a variety of parameters, materials, temperatures, and methods. In this research, HfO2 was used as the gate dielectric ad TiO2 was used as the gate material. The transistor HfO2/TiSi2 18-nm PMOS was invented using SILVACO TCAD. Ion implantation was adopted in the fabrication process for the method’s practicality and ability to be used to suppress short channel effects. The study involved ion implantation methods: compensation implantation, halo implantation energy, halo tilt, and source–drain implantation. Taguchi method is the best optimization process for a threshold voltage of HfO2/TiSi2 18-nm PMOS. In this case, the method adopted was Taguchi orthogonal array L9. The process parameters (ion implantations and noise factors were evaluated by examining the Taguchi’s signal-to-noise ratio (SNR and nominal-the-best for the threshold voltage (VTH. After optimization, the result showed that the VTH value of the 18-nm PMOS device was -0.291339.

Leakage current conduction mechanisms and electrical properties of atomic-layer-deposited HfO2/Ga2O3 MOS capacitors

Science.gov (United States)

Zhang, Hongpeng; Jia, Renxu; Lei, Yuan; Tang, Xiaoyan; Zhang, Yimen; Zhang, Yuming

2018-02-01

In this paper, current conduction mechanisms in HfO2/β-Ga2O3 metal-oxide-semiconductor (MOS) capacitors under positive and negative biases are investigated using the current-voltage (I-V) measurements conducted at temperatures from 298 K to 378 K. The Schottky emission is dominant under positively biased electric fields of 0.37-2.19 MV cm-1, and the extracted Schottky barrier height ranged from 0.88 eV to 0.91 eV at various temperatures. The Poole-Frenkel emission dominates under negatively biased fields of 1.92-4.83 MV cm-1, and the trap energy levels are from 0.71 eV to 0.77 eV at various temperatures. The conduction band offset (ΔE c) of HfO2/β-Ga2O3 is extracted to be 1.31  ±  0.05 eV via x-ray photoelectron spectroscopy, while a large negative sheet charge density of 1.04  ×  1013 cm-2 is induced at the oxide layer and/or HfO2/β-Ga2O3 interface. A low C-V hysteresis of 0.76 V, low interface state density (D it) close to 1  ×  1012 eV-1 cm-2, and low leakage current density of 2.38  ×  10-5 A cm-2 at a gate voltage of 7 V has been obtained, suggesting the great electrical properties of HfO2/β-Ga2O3 MOSCAP. According to the above analysis, ALD-HfO2 is an attractive candidate for high voltage β-Ga2O3 power devices.

Crystal structure and band gap determination of HfO2 thin films

NARCIS (Netherlands)

Cheynet, M.C.; Pokrant, S.; Tichelaar, F.D.; Rouvière, J.L.

2007-01-01

Valence electron energy loss spectroscopy (VEELS) and high resolution transmission electron microscopy (HRTEM) are performed on three different HfO2 thin films grown on Si (001) by chemical vapor deposition (CVD) or atomic layer deposition (ALD). For each sample the band gap (Eg) is determined by

MeV-Si ion irradiation effects on the electrical properties of HfO2 thin films on Si

International Nuclear Information System (INIS)

Yu Xiangkun; Shao Lin; Chen, Q.Y.; Trombetta, L.; Wang Chunyu; Dharmaiahgari, Bhanu; Wang Xuemei; Chen Hui; Ma, K.B.; Liu Jiarui; Chu, W.-K.

2006-01-01

We studied the irradiation effect of 2-MeV Si ions on HfO 2 films deposited on Si substrates. HfO 2 films ∼11 nm thick were deposited onto Si substrates by chemical vapor deposition. The samples were then irradiated by 2-MeV Si ions at a fluence of 1 x 10 14 cm -2 at room temperature, followed by rapid thermal annealing at 1000 deg. C for 10 s. After annealing, a layer of aluminum was deposited on the samples as the gate electrode to form metal-oxide-semiconductor (MOS) capacitor structures. Rutherford backscattering spectrometry and electrical measurement of both capacitance and current as a function of voltage were used to characterize the samples before and after annealing. Non-insulating properties of the HfO 2 films deteriorated immediately after the ion irradiation, but rapid thermal annealing effectively repaired the irradiation damages, as reflected in improved capacitance versus voltage characteristics and significant reduction of leakage current in the MOS capacitors

Enhanced PEC performance of nanoporous Si photoelectrodes by covering HfO2 and TiO2 passivation layers

Science.gov (United States)

Xing, Zhuo; Ren, Feng; Wu, Hengyi; Wu, Liang; Wang, Xuening; Wang, Jingli; Wan, Da; Zhang, Guozhen; Jiang, Changzhong

2017-03-01

Nanostructured Si as the high efficiency photoelectrode material is hard to keep stable in aqueous for water splitting. Capping a passivation layer on the surface of Si is an effective way of protecting from oxidation. However, it is still not clear in the different mechanisms and effects between insulating oxide materials and oxide semiconductor materials as passivation layers. Here, we compare the passivation effects, the photoelectrochemical (PEC) properties, and the corresponding mechanisms between the HfO2/nanoporous-Si and the TiO2/nanoporous-Si by I-V curves, Motte-schottky (MS) curves, and electrochemical impedance spectroscopy (EIS). Although the saturated photocurrent densities of the TiO2/nanoporous Si are lower than that of the HfO2/nanoporous Si, the former is more stable than the later.

Enhanced PEC performance of nanoporous Si photoelectrodes by covering HfO2 and TiO2 passivation layers.

Science.gov (United States)

Xing, Zhuo; Ren, Feng; Wu, Hengyi; Wu, Liang; Wang, Xuening; Wang, Jingli; Wan, Da; Zhang, Guozhen; Jiang, Changzhong

2017-03-02

Nanostructured Si as the high efficiency photoelectrode material is hard to keep stable in aqueous for water splitting. Capping a passivation layer on the surface of Si is an effective way of protecting from oxidation. However, it is still not clear in the different mechanisms and effects between insulating oxide materials and oxide semiconductor materials as passivation layers. Here, we compare the passivation effects, the photoelectrochemical (PEC) properties, and the corresponding mechanisms between the HfO 2 /nanoporous-Si and the TiO 2 /nanoporous-Si by I-V curves, Motte-schottky (MS) curves, and electrochemical impedance spectroscopy (EIS). Although the saturated photocurrent densities of the TiO 2 /nanoporous Si are lower than that of the HfO 2 /nanoporous Si, the former is more stable than the later.

Stable tetragonal phase and magnetic properties of Fe-doped HfO2 nanoparticles

Science.gov (United States)

Sales, T. S. N.; Cavalcante, F. H. M.; Bosch-Santos, B.; Pereira, L. F. D.; Cabrera-Pasca, G. A.; Freitas, R. S.; Saxena, R. N.; Carbonari, A. W.

2017-05-01

In this paper, the effect in structural and magnetic properties of iron doping with concentration of 20% in hafnium dioxide (HfO2) nanoparticles is investigated. HfO2 is a wide band gap oxide with great potential to be used as high-permittivity gate dielectrics, which can be improved by doping. Nanoparticle samples were prepared by sol-gel chemical method and had their structure, morphology, and magnetic properties, respectively, investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM) and scanning electron microscopy (SEM) with electron back scattering diffraction (EBSD), and magnetization measurements. TEM and SEM results show size distribution of particles in the range from 30 nm to 40 nm with small dispersion. Magnetization measurements show the blocking temperature at around 90 K with a strong paramagnetic contribution. XRD results show a major tetragonal phase (94%).

Stable tetragonal phase and magnetic properties of Fe-doped HfO2 nanoparticles

Directory of Open Access Journals (Sweden)

T. S. N. Sales

2017-05-01

Full Text Available In this paper, the effect in structural and magnetic properties of iron doping with concentration of 20% in hafnium dioxide (HfO2 nanoparticles is investigated. HfO2 is a wide band gap oxide with great potential to be used as high-permittivity gate dielectrics, which can be improved by doping. Nanoparticle samples were prepared by sol-gel chemical method and had their structure, morphology, and magnetic properties, respectively, investigated by X-ray diffraction (XRD, transmission electron microscopy (TEM and scanning electron microscopy (SEM with electron back scattering diffraction (EBSD, and magnetization measurements. TEM and SEM results show size distribution of particles in the range from 30 nm to 40 nm with small dispersion. Magnetization measurements show the blocking temperature at around 90 K with a strong paramagnetic contribution. XRD results show a major tetragonal phase (94%.

High temperature X-ray diffraction studies on HfO2-Gd2O3 system

International Nuclear Information System (INIS)

Panneerselvam, G.; Antony, M.P.; Ananthasivan, K.; Joseph, M.

2016-01-01

High temperature X-ray diffraction (HTXRD) technique is an important experimental tool for measuring thermal expansion of materials of interest. A series of solid solutions containing GdO 1.5 in HfO 2 ,Hf 1-y Gd y )O 2 (y = 0.15, 0.2, 0.3, 0.41 and 0.505) were prepared by solid state method. Structural characterization and computation of lattice parameter was carried out by using room temperature X-ray diffraction measurements. The room temperature lattice parameter estimated for (Hf 1-y Gd y )O 2 (y=0.15, 0.2, 0.3, 0.41 and 0.505) are 0.51714 nm, 0.51929 nm, 0.52359nm, 0.52789nm and 0.53241 nm, respectively. Thermal expansion coefficients and percentage linear thermal expansion of the HfO 2 -Gd 2 O 3 solid solutions containing 20 and 41 mol% GdO 1.5 were determined using HTXRD in the temperature range 298 to 1673K. The mean linear thermal expansion coefficients of the solid solutions containing 20 and 41 mol. %Gd are 11.65 x 10 -6 K -1 and 12.07 x 10 -6 K -1 , respectively. (author)

Modeling and Implementation of HfO2-based Ferroelectric Tunnel Junctions

Science.gov (United States)

Pringle, Spencer Allen

HfO2-based ferroelectric tunnel junctions (FTJs) represent a unique opportunity as both a next-generation digital non-volatile memory and as synapse devices in braininspired logic systems, owing to their higher reliability compared to filamentary resistive random-access memory (ReRAM) and higher speed and lower power consumption compared to competing devices, including phase-change memory (PCM) and state-of-the-art FTJ. Ferroelectrics are often easier to deposit and have simpler material structure than films for magnetic tunnel junctions (MTJs). Ferroelectric HfO2 also enables complementary metal-oxide-semiconductor (CMOS) compatibility, since lead zirconate titanate (PZT) and BaTiO3-based FTJs often are not. No other groups have yet demonstrated a HfO2-based FTJ (to best of the author's knowledge) or applied it to a suitable system. For such devices to be useful, system designers require models based on both theoretical physical analysis and experimental results of fabricated devices in order to confidently design control systems. Both the CMOS circuitry and FTJs must then be designed in layout and fabricated on the same die. This work includes modeling of proposed device structures using a custom python script, which calculates theoretical potential barrier heights as a function of material properties and corresponding current densities (ranging from 8x103 to 3x10-2 A/cm 2 with RHRS/RLRS ranging from 5x105 to 6, depending on ferroelectric thickness). These equations were then combined with polynomial fits of experimental timing data and implemented in a Verilog-A behavioral analog model in Cadence Virtuoso. The author proposes tristate CMOS control systems, and circuits, for implementation of FTJ devices as digital memory and presents simulated performance. Finally, a process flow for fabrication of FTJ devices with CMOS is presented. This work has therefore enabled the fabrication of FTJ devices at RIT and the continued investigation of them as applied to any

Atomic layer deposition of HfO2 on graphene through controlled ion beam treatment

International Nuclear Information System (INIS)

Kim, Ki Seok; Oh, Il-Kwon; Jung, Hanearl; Kim, Hyungjun; Yeom, Geun Young; Kim, Kyong Nam

2016-01-01

The polymer residue generated during the graphene transfer process to the substrate tends to cause problems (e.g., a decrease in electron mobility, unwanted doping, and non-uniform deposition of the dielectric material). In this study, by using a controllable low-energy Ar + ion beam, we cleaned the polymer residue without damaging the graphene network. HfO 2 grown by atomic layer deposition on graphene cleaned using an Ar + ion beam showed a dense uniform structure, whereas that grown on the transferred graphene (before Ar + ion cleaning) showed a non-uniform structure. A graphene–HfO 2 –metal capacitor fabricated by growing 20-nm thick HfO 2 on graphene exhibited a very low leakage current (<10 −11 A/cm 2 ) for Ar + ion-cleaned graphene, whereas a similar capacitor grown using the transferred graphene showed high leakage current.

Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001): Role of the substrate

International Nuclear Information System (INIS)

Soares, G. V.; Krug, C.; Miotti, L.; Bastos, K. P.; Lucovsky, G.; Baumvol, I. J. R.; Radtke, C.

2011-01-01

Thermally driven atomic transport in HfO 2 /GeO 2 /substrate structures on Ge(001) and Si(001) was investigated in N 2 ambient as function of annealing temperature and time. As-deposited stacks showed no detectable intermixing and no instabilities were observed on Si. On Ge, loss of O and Ge was detected in all annealed samples, presumably due to evolution of GeO from the GeO 2 /Ge interface. In addition, hafnium germanate is formed at 600 deg. C. Our data indicate that at 500 deg. C and above HfO 2 /GeO 2 stacks are stable only if isolated from the Ge substrate.

Atomic scale engineering of HfO2-based dielectrics for future DRAM applications

International Nuclear Information System (INIS)

Dudek, Piotr

2011-01-01

Modern dielectrics in combination with appropriate metal electrodes have a great potential to solve many difficulties associated with continuing miniaturization process in the microelectronic industry. One significant branch of microelectronics incorporates dynamic random access memory (DRAM) market. The DRAM devices scaled for over 35 years starting from 4 kb density to several Gb nowadays. The scaling process led to the dielectric material thickness reduction, resulting in higher leakage current density, and as a consequence higher power consumption. As a possible solution for this problem, alternative dielectric materials with improved electrical and material science parameters were intensively studied by many research groups. The higher dielectric constant allows the use of physically thicker layers with high capacitance but strongly reduced leakage current density. This work focused on deposition and characterization of thin insulating layers. The material engineering process was based on Si cleanroom compatible HfO 2 thin films deposited on TiN metal electrodes. A combined materials science and dielectric characterization study showed that Ba-added HfO 2 (BaHfO 3 ) films and Ti-added BaHfO 3 (BaHf 0.5 Ti 0.5 O 3 ) layers are promising candidates for future generation of state-of-the-art DRAMs. In especial a strong increase of the dielectric permittivity k was achieved for thin films of cubic BaHfO 3 (k∝38) and BaHf 0.5 Ti 0.5 O 3 (k∝90) with respect to monoclinic HfO 2 (k∝19). Meanwhile the CET values scaled down to 1 nm for BaHfO 3 and ∝0.8 nm for BaHf 0.5 Ti 0.5 O 3 with respect to HfO 2 (CET=1.5 nm). The Hf 4+ ions substitution in BaHfO 3 by Ti 4+ ions led to a significant decrease of thermal budget from 900 C for BaHfO 3 to 700 C for BaHf 0.5 Ti 0.5 O 3 . Future studies need to focus on the use of appropriate metal electrodes (high work function) and on film deposition process (homogeneity) for better current leakage control. (orig.)

SnO2 anode surface passivation by atomic layer deposited HfO2 improves li-ion battery performance

KAUST Repository

Yesibolati, Nulati; Shahid, Muhammad; Chen, Wei; Hedhili, Mohamed N.; Reuter, Mark C.; Ross, Frances M.; Alshareef, Husam N.

2014-01-01

For the first time, it is demonstrated that nanoscale HfO2 surface passivation layers formed by atomic layer deposition (ALD) significantly improve the performance of Li ion batteries with SnO2-based anodes. Specifically, the measured battery

SHI induced effects on the electrical and optical properties of HfO_2 thin films deposited by RF sputtering

International Nuclear Information System (INIS)

Manikanthababu, N.; Dhanunjaya, M.; Nageswara Rao, S.V.S.; Pathak, A.P.

2016-01-01

The continuous downscaling of Metal Oxide Semiconductor (MOS) devices has reached a limit with SiO_2 as a gate dielectric material. Introducing high-k dielectric materials as a replacement for the conservative SiO_2 is the only alternative to reduce the leakage current. HfO_2 is a reliable and an impending material for the wide usage as a gate dielectric in semiconductor industry. HfO_2 thin films were synthesized by RF sputtering technique. Here, we present a study of Swift Heavy Ion (SHI) irradiation with100 MeV Ag ions for studying the optical properties as well as 80 MeV Ni ions for studying the electrical properties of HfO_2/Si thin films. Rutherford Backscattering Spectrometry (RBS), Field Emission Scanning Electron Microscope (FESEM), energy-dispersive X-ray spectroscopy (EDS), profilometer and I–V (leakage current) measurements have been employed to study the SHI induced effects on both the structural, electrical and optical properties.

Low-temperature fabrication of an HfO2 passivation layer for amorphous indium-gallium-zinc oxide thin film transistors using a solution process.

Science.gov (United States)

Hong, Seonghwan; Park, Sung Pyo; Kim, Yeong-Gyu; Kang, Byung Ha; Na, Jae Won; Kim, Hyun Jae

2017-11-24

We report low-temperature solution processing of hafnium oxide (HfO 2 ) passivation layers for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). At 150 °C, the hafnium chloride (HfCl 4 ) precursor readily hydrolyzed in deionized (DI) water and transformed into an HfO 2 film. The fabricated HfO 2 passivation layer prevented any interaction between the back surface of an a-IGZO TFT and ambient gas. Moreover, diffused Hf 4+ in the back-channel layer of the a-IGZO TFT reduced the oxygen vacancy, which is the origin of the electrical instability in a-IGZO TFTs. Consequently, the a-IGZO TFT with the HfO 2 passivation layer exhibited improved stability, showing a decrease in the threshold voltage shift from 4.83 to 1.68 V under a positive bias stress test conducted over 10,000 s.

Tunneling current in HfO2 and Hf0.5Zr0.5O2-based ferroelectric tunnel junction

Science.gov (United States)

Dong, Zhipeng; Cao, Xi; Wu, Tong; Guo, Jing

2018-03-01

Ferroelectric tunnel junctions (FTJs) have been intensively explored for future low power data storage and information processing applications. Among various ferroelectric (FE) materials studied, HfO2 and H0.5Zr0.5O2 (HZO) have the advantage of CMOS process compatibility. The validity of the simple effective mass approximation, for describing the tunneling process in these materials, is examined by computing the complex band structure from ab initio simulations. The results show that the simple effective mass approximation is insufficient to describe the tunneling current in HfO2 and HZO materials, and quantitative accurate descriptions of the complex band structures are indispensable for calculation of the tunneling current. A compact k . p Hamiltonian is parameterized to and validated by ab initio complex band structures, which provides a method for efficiently and accurately computing the tunneling current in HfO2 and HZO. The device characteristics of a metal/FE/metal structure and a metal/FE/semiconductor (M-F-S) structure are investigated by using the non-equilibrium Green's function formalism with the parameterized effective Hamiltonian. The result shows that the M-F-S structure offers a larger resistance window due to an extra barrier in the semiconductor region at off-state. A FTJ utilizing M-F-S structure is beneficial for memory design.

The effect of a HfO2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT

International Nuclear Information System (INIS)

Mao Wei; Hao Yue; Ma Xiao-Hua; Wang Chong; Zhang Jin-Cheng; Liu Hong-Xia; Bi Zhi-Wei; Xu Sheng-Rui; Yang Lin-An; Yang Ling; Zhang Kai; Zhang Nai-Qian; Pei Yi; Yang Cui

2011-01-01

A GaN/Al 0.3 Ga 0.7 N/AlN/GaN high-electron mobility transistor utilizing a field plate (with a 0.3 μm overhang towards the drain and a 0.2 μm overhang towards the source) over a 165-nm sputtered HfO 2 insulator (HfO 2 -FP-HEMT) is fabricated on a sapphire substrate. Compared with the conventional field-plated HEMT, which has the same geometric structure but uses a 60-nm SiN insulator beneath the field plate (SiN-FP-HEMT), the HfO 2 -FP-HEMT exhibits a significant improvement of the breakdown voltage (up to 181 V) as well as a record field-plate efficiency (up to 276 V/μm). This is because the HfO 2 insulator can further improve the modulation of the field plate on the electric field distribution in the device channel, which is proved by the numerical simulation results. Based on the simulation results, a novel approach named the proportional design is proposed to predict the optimal dielectric thickness beneath the field plate. It can simplify the field-plated HEMT design significantly. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Resistive switching characteristics of HfO2-based memory devices on flexible plastics.

Science.gov (United States)

Han, Yong; Cho, Kyoungah; Park, Sukhyung; Kim, Sangsig

2014-11-01

In this study, we examine the characteristics of HfO2-based resistive switching random access memory (ReRAM) devices on flexible plastics. The Pt/HfO2/Au ReRAM devices exhibit the unipolar resistive switching behaviors caused by the conducting filaments. From the Auger depth profiles of the HfO2 thin film, it is confirmed that the relatively lower oxygen content in the interface of the bottom electrode is responsible for the resistive switching by oxygen vacancies. And the unipolar resistive switching behaviors are analyzed from the C-V characteristics in which negative and positive capacitances are measured in the low-resistance state and the high-resistance state, respectively. The devices have a high on/off ratio of 10(4) and the excellent retention properties even after a continuous bending test of two thousand cycles. The correlation between the device size and the memory characteristics is investigated as well. A relatively smaller-sized device having a higher on/off ratio operates at a higher voltage than a relatively larger-sized device.

Formation and disruption of conductive filaments in a HfO2/TiN structure

International Nuclear Information System (INIS)

Brivio, S; Tallarida, G; Cianci, E; Spiga, S

2014-01-01

The process of the formation and disruption of nanometric conductive filaments in a HfO 2 /TiN structure is investigated by conductive atomic force microscopy. The preforming state evidences nonhomogeneous conduction at high fields through conductive paths, which are associated with pre-existing defects and develop into conductive filaments with a forming procedure. The disruption of the same filaments is demonstrated as well, according to a bipolar operation. In addition, the conductive tip of the microscopy is exploited to perform electrical operations on single conductive spots, which evidences that neighboring conductive filaments are not electrically independent. We propose a picture that describes the evolution of the shape of the conductive filaments in the processes of their formation and disruption, which involves the development of conductive branches from a common root; this root resides in the pre-existing defects that lay at the HfO 2 /TiN interface. (paper)

Low-temperature fabrication of sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors

Science.gov (United States)

Yao, Rihui; Zheng, Zeke; Xiong, Mei; Zhang, Xiaochen; Li, Xiaoqing; Ning, Honglong; Fang, Zhiqiang; Xie, Weiguang; Lu, Xubing; Peng, Junbiao

2018-03-01

In this work, low temperature fabrication of a sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors (TFTs) on polyimide substrates was investigated. The effects of Ar-pressure during the sputtering process and then especially the post-annealing treatments at low temperature (≤200 °C) for HfO2 on reducing the density of defects in the bulk and on the surface were systematically studied. X-ray reflectivity, UV-vis and X-ray photoelectron spectroscopy, and micro-wave photoconductivity decay measurements were carried out and indicated that the high quality of optimized HfO2 film and its high dielectric properties contributed to the low concentration of structural defects and shallow localized defects such as oxygen vacancies. As a result, the well-structured HfO2 gate dielectric exhibited a high density of 9.7 g/cm3, a high dielectric constant of 28.5, a wide optical bandgap of 4.75 eV, and relatively low leakage current. The corresponding flexible a-IGZO TFT on polyimide exhibited an optimal device performance with a saturation mobility of 10.3 cm2 V-1 s-1, an Ion/Ioff ratio of 4.3 × 107, a SS value of 0.28 V dec-1, and a threshold voltage (Vth) of 1.1 V, as well as favorable stability under NBS/PBS gate bias and bending stress.

Low temperature formation of higher-k cubic phase HfO2 by atomic layer deposition on GeOx/Ge structures fabricated by in-situ thermal oxidation

International Nuclear Information System (INIS)

Zhang, R.; Huang, P.-C.; Taoka, N.; Yokoyama, M.; Takenaka, M.; Takagi, S.

2016-01-01

We have demonstrated a low temperature formation (300 °C) of higher-k HfO 2 using atomic layer deposition (ALD) on an in-situ thermal oxidation GeO x interfacial layer. It is found that the cubic phase is dominant in the HfO 2 film with an epitaxial-like growth behavior. The maximum permittivity of 42 is obtained for an ALD HfO 2 film on a 1-nm-thick GeO x form by the in-situ thermal oxidation. It is suggested from physical analyses that the crystallization of cubic phase HfO 2 can be induced by the formation of six-fold crystalline GeO x structures in the underlying GeO x interfacial layer

Optical properties of the Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings

Science.gov (United States)

Marszałek, Konstanty; Winkowski, Paweł; Jaglarz, Janusz

2014-01-01

Investigations of bilayer and trilayer Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings are presented in this paper. The oxide films were deposited on a heated quartz glass by e-gun evaporation in a vacuum of 5 × 10-3 [Pa] in the presence of oxygen. Depositions were performed at three different temperatures of the substrates: 100 °C, 200 °C and 300 °C. The coatings were deposited onto optical quartz glass (Corning HPFS). The thickness and deposition rate were controlled with Inficon XTC/2 thickness measuring system. Deposition rate was equal to 0.6 nm/s for Al2O3, 0.6 nm - 0.8 nm/s for HfO2 and 0.6 nm/s for SiO2. Simulations leading to optimization of the thin film thickness and the experimental results of optical measurements, which were carried out during and after the deposition process, have been presented. The optical thickness values, obtained from the measurements performed during the deposition process were as follows: 78 nm/78 nm for Al2O3/SiO2 and 78 nm/156 nm/78 nm for Al2O3/HfO2/SiO2. The results were then checked by ellipsometric technique. Reflectance of the films depended on the substrate temperature during the deposition process. Starting from 240 nm to the beginning of visible region, the average reflectance of the trilayer system was below 1 % and for the bilayer, minima of the reflectance were equal to 1.6 %, 1.15 % and 0.8 % for deposition temperatures of 100 °C, 200 °C and 300 °C, respectively.

Design and Fabrication of Interdigital Nanocapacitors Coated with HfO2

Directory of Open Access Journals (Sweden)

Gabriel González

2015-01-01

Full Text Available In this article nickel interdigital capacitors were fabricated on top of silicon substrates. The capacitance of the interdigital capacitor was optimized by coating the electrodes with a 60 nm layer of HfO2. An analytical solution of the capacitance was compared to electromagnetic simulations using COMSOL and with experimental measurements. Results show that modeling interdigital capacitors using Finite Element Method software such as COMSOL is effective in the design and electrical characterization of these transducers.

A comparative study of amorphous InGaZnO thin-film transistors with HfOxNy and HfO2 gate dielectrics

International Nuclear Information System (INIS)

Zou, Xiao; Tong, Xingsheng; Fang, Guojia; Yuan, Longyan; Zhao, Xingzhong

2010-01-01

High-κ HfO x N y and HfO 2 films are applied to amorphous InGaZnO (a-IGZO) devices as gate dielectric using radio-frequency reactive sputtering. The electrical characteristics and reliability of a-IGZO metal–insulator–semiconductor (MIS) capacitors and thin-film transistors (TFTs) are then investigated. Experimental results indicate that the nitrogen incorporation into HfO 2 can effectively improve the interface quality and enhance the reliability of the devices. Electrical properties with an interface-state density of 5.2 × 10 11 eV −1 cm −2 , capacitance equivalent thickness of 1.65 nm, gate leakage current density of 3.4 × 10 −5 A cm −2 at V fb +1 V, equivalent permittivity of 23.6 and hysteresis voltage of 110 mV are obtained for an Al/HfO x N y /a-IGZO MIS capacitor. Superior performance of HfO x N y /a-IGZO TFTs has also been achieved with a low threshold voltage of 0.33 V, a high saturation mobility of 12.1 cm 2 V −1 s −1 and a large on–off current ratio up to 7 × 10 7 (W/L = 500/20 µm) at 3 V

Nanopore fabricated in pyramidal HfO2 film by dielectric breakdown method

Science.gov (United States)

Wang, Yifan; Chen, Qi; Deng, Tao; Liu, Zewen

2017-10-01

The dielectric breakdown method provides an innovative solution to fabricate solid-state nanopores on insulating films. A nanopore generation event via this method is considered to be caused by random charged traps (i.e., structural defects) and high electric fields in the membrane. Thus, the position and number of nanopores on planar films prepared by the dielectric breakdown method is hard to control. In this paper, we propose to fabricate nanopores on pyramidal HfO2 films (10-nm and 15-nm-thick) to improve the ability to control the location and number during the fabrication process. Since the electric field intensity gets enhanced at the corners of the pyramid-shaped film, the probability of nanopore occurrence at vertex and edge areas increases. This priority of appearance provides us chance to control the location and number of nanopores by monitoring a sudden irreversible discrete increase in current. The experimental results showed that the probability of nanopore occurrence decreases in an order from the vertex area, the edge area to the side face area. The sizes of nanopores ranging from 30 nm to 10 nm were obtained. Nanopores fabricated on the pyramid-shaped HfO2 film also showed an obvious ion current rectification characteristic, which might improve the nanopore performance as a biomolecule sequencing platform.

Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric.

Science.gov (United States)

Xia, Pengkun; Feng, Xuewei; Ng, Rui Jie; Wang, Shijie; Chi, Dongzhi; Li, Cequn; He, Zhubing; Liu, Xinke; Ang, Kah-Wee

2017-01-13

Two-dimensional layered semiconductors such as molybdenum disulfide (MoS 2 ) at the quantum limit are promising material for nanoelectronics and optoelectronics applications. Understanding the interface properties between the atomically thin MoS 2 channel and gate dielectric is fundamentally important for enhancing the carrier transport properties. Here, we investigate the frequency dispersion mechanism in a metal-oxide-semiconductor capacitor (MOSCAP) with a monolayer MoS 2 and an ultra-thin HfO 2 high-k gate dielectric. We show that the existence of sulfur vacancies at the MoS 2 -HfO 2 interface is responsible for the generation of interface states with a density (D it ) reaching ~7.03 × 10 11  cm -2  eV -1 . This is evidenced by a deficit S:Mo ratio of ~1.96 using X-ray photoelectron spectroscopy (XPS) analysis, which deviates from its ideal stoichiometric value. First-principles calculations within the density-functional theory framework further confirms the presence of trap states due to sulfur deficiency, which exist within the MoS 2 bandgap. This corroborates to a voltage-dependent frequency dispersion of ~11.5% at weak accumulation which decreases monotonically to ~9.0% at strong accumulation as the Fermi level moves away from the mid-gap trap states. Further reduction in D it could be achieved by thermally diffusing S atoms to the MoS 2 -HfO 2 interface to annihilate the vacancies. This work provides an insight into the interface properties for enabling the development of MoS 2 devices with carrier transport enhancement.

Optimization of pH sensing using silicon nanowire field effect transistors with HfO2 as the sensing surface

International Nuclear Information System (INIS)

Zafar, Sufi; D'Emic, Christopher; Afzali, Ali; Fletcher, Benjamin; Zhu, Y; Ning, Tak

2011-01-01

Silicon nanowire field effect transistor sensors with SiO 2 /HfO 2 as the gate dielectric sensing surface are fabricated using a top down approach. These sensors are optimized for pH sensing with two key characteristics. First, the pH sensitivity is shown to be independent of buffer concentration. Second, the observed pH sensitivity is enhanced and is equal to the Nernst maximum sensitivity limit of 59 mV/pH with a corresponding subthreshold drain current change of ∼ 650%/pH. These two enhanced pH sensing characteristics are attributed to the use of HfO 2 as the sensing surface and an optimized fabrication process compatible with silicon processing technology.

Optimization of pH sensing using silicon nanowire field effect transistors with HfO2 as the sensing surface.

Science.gov (United States)

Zafar, Sufi; D'Emic, Christopher; Afzali, Ali; Fletcher, Benjamin; Zhu, Y; Ning, Tak

2011-10-07

Silicon nanowire field effect transistor sensors with SiO(2)/HfO(2) as the gate dielectric sensing surface are fabricated using a top down approach. These sensors are optimized for pH sensing with two key characteristics. First, the pH sensitivity is shown to be independent of buffer concentration. Second, the observed pH sensitivity is enhanced and is equal to the Nernst maximum sensitivity limit of 59 mV/pH with a corresponding subthreshold drain current change of ∼ 650%/pH. These two enhanced pH sensing characteristics are attributed to the use of HfO(2) as the sensing surface and an optimized fabrication process compatible with silicon processing technology.

Perpendicular magnetic anisotropy of CoFeB\\Ta bilayers on ALD HfO2

Directory of Open Access Journals (Sweden)

Bart F. Vermeulen

2017-05-01

Full Text Available Perpendicular magnetic anisotropy (PMA is an essential condition for CoFe thin films used in magnetic random access memories. Until recently, interfacial PMA was mainly known to occur in materials stacks with MgO\\CoFe(B interfaces or using an adjacent crystalline heavy metal film. Here, PMA is reported in a CoFeB\\Ta bilayer deposited on amorphous high-κ dielectric (relative permittivity κ=20 HfO2, grown by atomic layer deposition (ALD. PMA with interfacial anisotropy energy Ki up to 0.49 mJ/m2 appears after annealing the stacks between 200°C and 350°C, as shown with vibrating sample magnetometry. Transmission electron microscopy shows that the decrease of PMA starting from 350°C coincides with the onset of interdiffusion in the materials. High-κ dielectrics are potential enablers for giant voltage control of magnetic anisotropy (VCMA. The absence of VCMA in these experiments is ascribed to a 0.6 nm thick magnetic dead layer between HfO2 and CoFeB. The results show PMA can be easily obtained on ALD high-κ dielectrics.

Surface modelling on heavy atom crystalline compounds: HfO2 and UO2 fluorite structures

International Nuclear Information System (INIS)

Evarestov, Robert; Bandura, Andrei; Blokhin, Eugeny

2009-01-01

The study of the bulk and surface properties of cubic (fluorite structure) HfO 2 and UO 2 was performed using the hybrid Hartree-Fock density functional theory linear combination of atomic orbitals simulations via the CRYSTAL06 computer code. The Stuttgart small-core pseudopotentials and corresponding basis sets were used for the core-valence interactions. The influence of relativistic effects on the structure and properties of the systems was studied. It was found that surface properties of Mott-Hubbard dielectric UO 2 differ from those found for other metal oxides with the closed-shell configuration of d-electrons

Coexistence of different charge states in Ta-doped monoclinic HfO2: Theoretical and experimental approaches

DEFF Research Database (Denmark)

Taylor, M.A.; Alonso, R.E.; Errico, L.A.

2010-01-01

A combination of experiments and ab initio quantum-mechanical calculations has been applied to examine hyperfine interactions in Ta-doped hafnium dioxide. Although the properties of monoclinic HfO2 have been the subject of several earlier studies, some aspects remain open. In particular, time dif...

Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment

Science.gov (United States)

Fan, Ching-Lin; Tseng, Fan-Ping; Tseng, Chiao-Yuan

2018-01-01

In this work, amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a HfO2 gate insulator and CF4 plasma treatment was demonstrated for the first time. Through the plasma treatment, both the electrical performance and reliability of the a-IGZO TFT with HfO2 gate dielectric were improved. The carrier mobility significantly increased by 80.8%, from 30.2 cm2/V∙s (without treatment) to 54.6 cm2/V∙s (with CF4 plasma treatment), which is due to the incorporated fluorine not only providing an extra electron to the IGZO, but also passivating the interface trap density. In addition, the reliability of the a-IGZO TFT with HfO2 gate dielectric has also been improved by the CF4 plasma treatment. By applying the CF4 plasma treatment to the a-IGZO TFT, the hysteresis effect of the device has been improved and the device’s immunity against moisture from the ambient atmosphere has been enhanced. It is believed that the CF4 plasma treatment not only significantly improves the electrical performance of a-IGZO TFT with HfO2 gate dielectric, but also enhances the device’s reliability. PMID:29772767

Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment

Directory of Open Access Journals (Sweden)

Ching-Lin Fan

2018-05-01

Full Text Available In this work, amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs with a HfO2 gate insulator and CF4 plasma treatment was demonstrated for the first time. Through the plasma treatment, both the electrical performance and reliability of the a-IGZO TFT with HfO2 gate dielectric were improved. The carrier mobility significantly increased by 80.8%, from 30.2 cm2/V∙s (without treatment to 54.6 cm2/V∙s (with CF4 plasma treatment, which is due to the incorporated fluorine not only providing an extra electron to the IGZO, but also passivating the interface trap density. In addition, the reliability of the a-IGZO TFT with HfO2 gate dielectric has also been improved by the CF4 plasma treatment. By applying the CF4 plasma treatment to the a-IGZO TFT, the hysteresis effect of the device has been improved and the device’s immunity against moisture from the ambient atmosphere has been enhanced. It is believed that the CF4 plasma treatment not only significantly improves the electrical performance of a-IGZO TFT with HfO2 gate dielectric, but also enhances the device’s reliability.

Influence of standing-wave electric field pattern on the laser damage resistance of HfO sub 2 thin films

CERN Document Server

Protopapa, M L; De Tomasi, F; Di Giulio, M; Perrone, M R; Scaglione, S

2002-01-01

The standing-wave electric field pattern that forms inside an optical coating as a consequence of laser irradiation is one of the factors influencing the coating laser-induced damage threshold. The influence of the standing-wave electric field profile on the damage resistance to ultraviolet radiation of hafnium dioxide (HfO sub 2) thin films was investigated in this work. To this end, HfO sub 2 thin films of different thicknesses deposited by the electron beam evaporation technique at the same deposition conditions were analyzed. Laser damage thresholds of the samples were measured at 308 nm (XeCl laser) by the photoacoustic beam deflection technique and microscopic inspections. The dependence of the laser damage threshold on the standing-wave electric field pattern was analyzed.

Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition

Science.gov (United States)

Cao, Yan-Qiang; Wu, Bing; Wu, Di; Li, Ai-Dong

2017-05-01

In situ-formed SiO2 was introduced into HfO2 gate dielectrics on Ge substrate as interlayer by plasma-enhanced atomic layer deposition (PEALD). The interfacial, electrical, and band alignment characteristics of the HfO2/SiO2 high-k gate dielectric stacks on Ge have been well investigated. It has been demonstrated that Si-O-Ge interlayer is formed on Ge surface during the in situ PEALD SiO2 deposition process. This interlayer shows fantastic thermal stability during annealing without obvious Hf-silicates formation. In addition, it can also suppress the GeO2 degradation. The electrical measurements show that capacitance equivalent thickness of 1.53 nm and a leakage current density of 2.1 × 10-3 A/cm2 at gate bias of Vfb + 1 V was obtained for the annealed sample. The conduction (valence) band offsets at the HfO2/SiO2/Ge interface with and without PDA are found to be 2.24 (2.69) and 2.48 (2.45) eV, respectively. These results indicate that in situ PEALD SiO2 may be a promising interfacial control layer for the realization of high-quality Ge-based transistor devices. Moreover, it can be demonstrated that PEALD is a much more powerful technology for ultrathin interfacial control layer deposition than MOCVD.

Improvement in negative bias illumination stress stability of In-Ga-Zn-O thin film transistors using HfO2 gate insulators by controlling atomic-layer-deposition conditions

Science.gov (United States)

Na, So-Yeong; Kim, Yeo-Myeong; Yoon, Da-Jeong; Yoon, Sung-Min

2017-12-01

The effects of atomic layer deposition (ALD) conditions for the HfO2 gate insulators (GI) on the device characteristics of the InGaZnO (IGZO) thin film transistors (TFTs) were investigated when the ALD temperature and Hf precursor purge time were varied to 200, 225, and 250 °C, and 15 and 30 s, respectively. The HfO2 thin films showed low leakage current density of 10-8 A cm-2, high dielectric constant of over 20, and smooth surface roughness at all ALD conditions. The IGZO TFTs using the HfO2 GIs showed good device characteristics such as a saturation mobility as high as 11 cm2 V-1 s-1, a subthreshold swing as low as 0.10 V/dec, and all the devices could be operated at a gate voltage as low as  ±3 V. While there were no marked differences in transfer characteristics and PBS stabilities among the fabricated devices, the NBIS instabilities could be improved by increasing the ALD temperature for the formation of HfO2 GIs by reducing the oxygen vacancies within the IGZO channel.

Fabrication of periodic arrays of metallic nanoparticles by block copolymer templates on HfO_2 substrates

International Nuclear Information System (INIS)

Frascaroli, Jacopo; Seguini, Gabriele; Spiga, Sabina; Perego, Michele; Boarino, Luca

2015-01-01

Block copolymer-based templates can be exploited for the fabrication of ordered arrays of metal nanoparticles (NPs) with a diameter down to a few nanometers. In order to develop this technique on metal oxide substrates, we studied the self-assembly of polymeric templates directly on the HfO_2 surface. Using a random copolymer neutralization layer, we obtained an effective HfO_2 surface neutralization, while the effects of surface cleaning and annealing temperature were carefully examined. Varying the block copolymer molecular weight, we produced regular nanoporous templates with feature size variable between 10 and 30 nm and a density up to 1.5 × 10"1"1 cm"−"2. With the adoption of a pattern transfer process, we produced ordered arrays of Pt and Pt/Ti NPs with diameters of 12, 21 and 29 nm and a constant size dispersion (σ) of 2.5 nm. For the smallest template adopted, the NP diameter is significantly lower than the original template dimension. In this specific configuration, the granularity of the deposited film probably influences the pattern transfer process and very small NPs of 12 nm were achieved without a significant broadening of the size distribution. (paper)

Eu-doped ZnO-HfO2 hybrid nanocrystal-embedded low-loss glass-ceramic waveguides

Science.gov (United States)

Ghosh, Subhabrata; N, Shivakiran Bhaktha B.

2016-03-01

We report on the sol-gel fabrication, using a dip-coating technique, of low-loss Eu-doped 70SiO2 -(30-x) HfO2-xZnO (x = 2, 5, 7 and 10 mol%) ternary glass-ceramic planar waveguides. Transmission electron microscopy and grazing incident x-ray diffraction experiments confirm the controlled growth of hybrid nanocrystals with an average size of 3 nm-25 nm, composed of ZnO encapsulated by a thin layer of nanocrystalline HfO2, with an increase of ZnO concentration from x = 2 mol% to 10 mol% in the SiO2-HfO2 composite matrix. The effect of crystallization on the local environment of Eu ions, doped in the ZnO-HfO2 hybrid nanocrystal-embedded glass-ceramic matrix, is studied using photoluminescence spectra, wherein an intense mixed-valence state (divalent as well as trivalent) emission of Eu ions is observed. The existence of Eu2+ and Eu3+ in the SiO2-HfO2-ZnO ternary matrix is confirmed by x-ray photoelectron spectroscopy. Importantly, the Eu{}2+,3+-doped ternary waveguides exhibit low propagation losses (0.3 ± 0.2 dB cm-1 at 632.8 nm) and optical transparency in the visible region of the electromagnetic spectrum, which makes ZnO-HfO2 nanocrystal-embedded SiO2-HfO2-ZnO waveguides a viable candidate for the development of on-chip, active, integrated optical devices.

GaN MOSHEMT employing HfO2 as a gate dielectric with partially etched barrier

Science.gov (United States)

Han, Kefeng; Zhu, Lin

2017-09-01

In order to suppress the gate leakage current of a GaN high electron mobility transistor (GaN HEMT), a GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) is proposed, in which a metal-oxide-semiconductor gate with high-dielectric-constant HfO2 as an insulating dielectric is employed to replace the traditional GaN HEMT Schottky gate. A 0.5 μm gate length GaN MOSHEMT was fabricated based on the proposed structure, the {{{Al}}}0.28{{{Ga}}}0.72{{N}} barrier layer is partially etched to produce a higher transconductance without deteriorating the transport characteristics of the two-dimensional electron gas in the channel, the gate dielectric is HfO2 deposited by atomic layer deposition. Current-voltage characteristics and radio frequency characteristics are obtained after device preparation, the maximum current density of the device is 900 mA mm-1, the source-drain breakdown voltage is 75 V, gate current is significantly suppressed and the forward gate voltage swing range is about ten times higher than traditional GaN HEMTs, the GaN MOSHEMT also demonstrates radio frequency characteristics comparable to traditional GaN HEMTs with the same gate length.

High performance organic field-effect transistors with ultra-thin HfO2 gate insulator deposited directly onto the organic semiconductor

International Nuclear Information System (INIS)

Ono, S.; Häusermann, R.; Chiba, D.; Shimamura, K.; Ono, T.; Batlogg, B.

2014-01-01

We have produced stable organic field-effect transistors (OFETs) with an ultra-thin HfO 2 gate insulator deposited directly on top of rubrene single crystals by atomic layer deposition (ALD). We find that ALD is a gentle deposition process to grow thin films without damaging rubrene single crystals, as results these devices have a negligibly small threshold voltage and are very stable against gate-bias-stress, and the mobility exceeds 1 cm 2 /V s. Moreover, the devices show very little degradation even when kept in air for more than 2 months. These results demonstrate thin HfO 2 layers deposited by ALD to be well suited as high capacitance gate dielectrics in OFETs operating at small gate voltage. In addition, the dielectric layer acts as an effective passivation layer to protect the organic semiconductor

Probing the thermal decomposition behaviors of ultrathin HfO2 films by an in situ high temperature scanning tunneling microscope.

Science.gov (United States)

Xue, Kun; Wang, Lei; An, Jin; Xu, Jianbin

2011-05-13

The thermal decomposition of ultrathin HfO(2) films (∼0.6-1.2 nm) on Si by ultrahigh vacuum annealing (25-800 °C) is investigated in situ in real time by scanning tunneling microscopy. Two distinct thickness-dependent decomposition behaviors are observed. When the HfO(2) thickness is ∼ 0.6 nm, no discernible morphological changes are found below ∼ 700 °C. Then an abrupt reaction occurs at 750 °C with crystalline hafnium silicide nanostructures formed instantaneously. However, when the thickness is about 1.2 nm, the decomposition proceeds gradually with the creation and growth of two-dimensional voids at 800 °C. The observed thickness-dependent behavior is closely related to the SiO desorption, which is believed to be the rate-limiting step of the decomposition process.

Material parameters from frequency dispersion simulation of floating gate memory with Ge nanocrystals in HfO2

Science.gov (United States)

Palade, C.; Lepadatu, A. M.; Slav, A.; Lazanu, S.; Teodorescu, V. S.; Stoica, T.; Ciurea, M. L.

2018-01-01

Trilayer memory capacitors with Ge nanocrystals (NCs) floating gate in HfO2 were obtained by magnetron sputtering deposition on p-type Si substrate followed by rapid thermal annealing at relatively low temperature of 600 °C. The frequency dispersion of capacitance and resistance was measured in accumulation regime of Al/HfO2 gate oxide/Ge NCs in HfO2 floating gate/HfO2 tunnel oxide/SiOx/p-Si/Al memory capacitors. For simulation of the frequency dispersion a complex circuit model was used considering an equivalent parallel RC circuit for each layer of the trilayer structure. A series resistance due to metallic contacts and Si substrate was necessary to be included in the model. A very good fit to the experimental data was obtained and the parameters of each layer in the memory capacitor, i.e. capacitances and resistances were determined and in turn the intrinsic material parameters, i.e. dielectric constants and resistivities of layers were evaluated. The results are very important for the study and optimization of the hysteresis behaviour of floating gate memories based on NCs embedded in oxide.

Electrical Characterization of Defects Created by γ-Radiation in HfO2-Based MIS Structures for RRAM Applications

Science.gov (United States)

García, H.; González, M. B.; Mallol, M. M.; Castán, H.; Dueñas, S.; Campabadal, F.; Acero, M. C.; Sambuco Salomone, L.; Faigón, A.

2018-04-01

The γ-radiation effects on the electrical characteristics of metal-insulator-semiconductor capacitors based on HfO2, and on the resistive switching characteristics of the structures have been studied. The HfO2 was grown directly on silicon substrates by atomic layer deposition. Some of the capacitors were submitted to a γ ray irradiation using three different doses (16 kGy, 96 kGy and 386 kGy). We studied the electrical characteristics in the pristine state of the capacitors. The radiation increased the interfacial state densities at the insulator/semiconductor interface, and the slow traps inside the insulator near the interface. However, the leakage current is not increased by the irradiation, and the conduction mechanism is Poole-Frenkel for all the samples. The switching characteristics were also studied, and no significant differences were obtained in the performance of the devices after having been irradiated, indicating that the fabricated capacitors present good radiation hardness for its use as a RS element.

Characterization, integration and reliability of HfO2 and LaLuO3 high-κ/metal gate stacks for CMOS applications

International Nuclear Information System (INIS)

Nichau, Alexander

2013-01-01

The continued downscaling of MOSFET dimensions requires an equivalent oxide thickness (EOT) of the gate stack below 1 nm. An EOT below 1.4 nm is hereby enabled by the use of high-κ/metal gate stacks. LaLuO 3 and HfO 2 are investigated as two different high-κ oxides on silicon in conjunction with TiN as the metal electrode. LaLuO 3 and its temperature-dependent silicate formation are characterized by hard X-ray photoemission spectroscopy (HAXPES). The effective attenuation length of LaLuO 3 is determined between 7 and 13 keV to enable future interface and diffusion studies. In a first investigation of LaLuO 3 on germanium, germanate formation is shown. LaLuO 3 is further integrated in a high-temperature MOSFET process flow with varying thermal treatment. The devices feature drive currents up to 70μA/μm at 1μm gate length. Several optimization steps are presented. The effective device mobility is related to silicate formation and thermal budget. At high temperature the silicate formation leads to mobility degradation due to La-rich silicate formation. The integration of LaLuO 3 in high-T processes delicately connects with the optimization of the TiN metal electrode. Hereby, stoichiometric TiN yields the best results in terms of thermal stability with respect to Si-capping and high-κ oxide. Different approaches are presented for a further EOT reduction with LaLuO 3 and HfO 2 . Thereby the thermodynamic and kinetic predictions are employed to estimate the behavior on the nanoscale. Based on thermodynamics, excess oxygen in the gate stack, especially in oxidized metal electrodes, is identified to prevent EOT scaling below 1.2 nm. The equivalent oxide thickness of HfO 2 gate stacks is scalable below 1 nm by the use of thinned interfacial SiO 2 . The prevention of oxygen incorporation into the metal electrode by Si-capping maintains the EOT after high temperature annealing. Redox systems are employed within the gate electrode to decrease the EOT of HfO 2 gate stacks

A comparative study on top-gated and bottom-gated multilayer MoS2 transistors with gate stacked dielectric of Al2O3/HfO2.

Science.gov (United States)

Zou, Xiao; Xu, Jingping; Huang, Hao; Zhu, Ziqang; Wang, Hongjiu; Li, Borui; Liao, Lei; Fang, Guojia

2018-06-15

Top-gated and bottom-gated transistors with multilayer MoS 2 channel fully encapsulated by stacked Al 2 O 3 /HfO 2 (9 nm/6 nm) were fabricated and comparatively studied. Excellent electrical properties are demonstrated for the TG transistors with high on-off current ratio of 10 8 , high field-effect mobility of 10 2 cm 2 V -1 s -1 , and low subthreshold swing of 93 mV dec -1 . Also, enhanced reliability has been achieved for the TG transistors with threshold voltage shift of 10 -3 -10 -2 V MV -1 cm -1 after 6 MV cm -1 gate-biased stressing. All improvement for the TG device can be ascribed to the formed device structure and dielectric environment. Degradation of the performance for the BG transistors should be attributed to reduced gate capacitance density and deteriorated interface properties related to vdW gap with a thickness about 0.4 nm. So, the TG transistor with MoS 2 channel fully encapsulated by stacked Al 2 O 3 /HfO 2 is a promising way to fabricate high-performance ML MoS 2 field-effect transistors for practical electron device applications.

Low-Frequency Noise in Layered ReS2 Field Effect Transistors on HfO2 and Its Application for pH Sensing.

Science.gov (United States)

Liao, Wugang; Wei, Wei; Tong, Yu; Chim, Wai Kin; Zhu, Chunxiang

2018-02-28

Layered rhenium disulfide (ReS 2 ) field effect transistors (FETs), with thickness ranging from few to dozens of layers, are demonstrated on 20 nm thick HfO 2 /Si substrates. A small threshold voltage of -0.25 V, high on/off current ratio of up to ∼10 7 , small subthreshold swing of 116 mV/dec, and electron carrier mobility of 6.02 cm 2 /V·s are obtained for the two-layer ReS 2 FETs. Low-frequency noise characteristics in ReS 2 FETs are analyzed for the first time, and it is found that the carrier number fluctuation mechanism well describes the flicker (1/f) noise of ReS 2 FETs with different thicknesses. pH sensing using a two-layer ReS 2 FET with HfO 2 as a sensing oxide is then demonstrated with a voltage sensitivity of 54.8 mV/pH and a current sensitivity of 126. The noise characteristics of the ReS 2 FET-based pH sensors are also examined, and a corresponding detection limit of 0.0132 pH is obtained. Our studies suggest the high potential of ReS 2 for future low-power nanoelectronics and biosensor applications.

Effect of current compliance and voltage sweep rate on the resistive switching of HfO2/ITO/Invar structure as measured by conductive atomic force microscopy

International Nuclear Information System (INIS)

Wu, You-Lin; Liao, Chun-Wei; Ling, Jing-Jenn

2014-01-01

The electrical characterization of HfO 2 /ITO/Invar resistive switching memory structure was studied using conductive atomic force microscopy (AFM) with a semiconductor parameter analyzer, Agilent 4156C. The metal alloy Invar was used as the metal substrate to ensure good ohmic contact with the substrate holder of the AFM. A conductive Pt/Ir AFM tip was placed in direct contact with the HfO 2 surface, such that it acted as the top electrode. Nanoscale current-voltage (I-V) characteristics of the HfO 2 /ITO/Invar structure were measured by applying a ramp voltage through the conductive AFM tip at various current compliances and ramp voltage sweep rates. It was found that the resistance of the low resistance state (RLRS) decreased with increasing current compliance value, but resistance of high resistance state (RHRS) barely changed. However, both the RHRS and RLRS decreased as the voltage sweep rate increased. The reasons for this dependency on current compliance and voltage sweep rate are discussed.

Critical Parameters and Critical-Region (p,ρ ,T) Data of trans-1,1,1,3-Tetrafluorobut-2-ene [HFO-1354mzy(E)

Science.gov (United States)

Kimura, Takeru; Kayukawa, Yohei; Miyamoto, Hiroyuki; Saito, Kiyoshi

2017-08-01

This study presents the experimental measurement of the pρ T properties and critical parameters of a low GWP type refrigerant, trans-1,1,1,3-Tetrafluorobut-2-ene (HFO-1354mzy(E)). The sample purity of the substance was 99 area %. p ρ T property measurements and visual observations of the meniscus of HFO-1354mzy(E) were carried out using a metal-bellows volumometer with an optical cell. The critical temperature was determined by observation of the critical opalescence. The critical pressure and critical density were determined as the inflection point of the isothermal p ρ T property data at the critical temperature. For more precise clarification of the thermodynamic surface in the vicinity of the critical point, additional p ρ T property measurements were carried out on three isotherms in the supercritical region. The expanded uncertainties (k = 2) in the temperature, pressure, and density measurements were estimated to be less than 3 mK, 1.2 kPa, and 0.32 \\hbox {kg} \\cdot \\hbox {m}^{-3}, respectively. The expanded uncertainties of the critical parameters were estimated to be less than 13 mK, 1.4 kPa, and 2.3 \\hbox {kg} \\cdot \\hbox {m}^{-3}, respectively. These values are the first reported for HFO-1354mzy(E) and are necessary for the development of its equation of state in the near future.

A Numerical Study of Spray Characteristics in Medium Speed Engine Fueled by Different HFO/n-Butanol Blends

Directory of Open Access Journals (Sweden)

Hashem Nowruzi

2014-01-01

Full Text Available In the present study, nonreacting and nonevaporating spray characteristics of heavy fuel oil (HFO/n-butanol blends are numerically investigated under two different high pressure injections in medium speed engines. An Eulerian-Lagrangian multiphase scheme is used to simulate blend of C14H30 as HFO and 0%, 10%, 15%, and 20% by volume of n-butanol. OpenFOAM CFD toolbox is modified and implemented to study the effect of different blends of HFO/n-butanol on the spray characteristics at 600 and 1000 bar. To validate the presented simulations, current numerical results are compared against existing experimental data and good compliance is achieved. Based on the numerical findings, addition of n-butanol to HFO increases the particles volume in parcels at 600 bar. It was also found that blend fuels increase the number of spray particles and the average velocity of spray compared to pure HFO. Moreover, under injection pressure of 1000 bar, HFO/n-butanol blends compared to pure HFO fuel decrease particles volume in parcels of spray. Another influence of HFO/n-butanol blends is the decrease in average of particles diameter in parcels. Meanwhile, the effect of HFO/n-butanol on spray length is proved to be negligible. Finally, it can be concluded that higher injection pressure improves the spray efficiency.

HFO operation with CR injection

Energy Technology Data Exchange (ETDEWEB)

Poensgen, Christian [MAN-Diesel und Turbo SE, Augsburg (Germany)

2011-07-01

In 1996 MAN Diesel and Turbo SE started the development of a CR-system for medium speed engines for HFO operation up to fuel viscosity of 700 cSt. 2004 the first field test engine, a 7L 32/40 GenSet was put into service as a retrofit and collected up to now more than 20.000 running hours operated on HFO on a large container vessel. Meanwhile several L32/40 CR GenSets, L32/44 CR, V48/60 CR and L21/31 CR engines collected more than 100000 running hours in HFO operation before MAN Diesel started up the serial production of the new 32/44 CR and 48/60 CR engines. All of these engines are still in service. The paper will give an overview about the field experience and countermeasures which were necessary to develop a reliable product which fulfills the customers' demands concerning low fuel oil consumption, invisible smoke over the whole load range, low emission levels and maintenance costs. The experience was made in a wide range of applications such as GenSet, Cruise Vessel main propulsion and ferry main propulsion running 24h/day. The field test engines reached an availability of more than 90% per year. The paper also will point out the win/win situation for the the manufacturer and customer to participate in the development of the CR technology. For customers satisfaction MAN Diesel provides help for easy handling like online access per satellite connection, easy leakage detection and operator training at site or at the new built academies. The flexibility of the CR-system is the base frame for the future development of engines which fulfills IMO TIER II and IMO TIER III with high efficiency. The necessary reliability, a must, has been proven in the field under real conditions. (orig.)

Study of strained-Si p-channel MOSFETs with HfO2 gate dielectric

Science.gov (United States)

Pradhan, Diana; Das, Sanghamitra; Dash, Tara Prasanna

2016-10-01

In this work, the transconductance of strained-Si p-MOSFETs with high-K dielectric (HfO2) as gate oxide, has been presented through simulation using the TCAD tool Silvaco-ATLAS. The results have been compared with a SiO2/strained-Si p-MOSFET device. Peak transconductance enhancement factors of 2.97 and 2.73 has been obtained for strained-Si p-MOSFETs in comparison to bulk Si channel p-MOSFETs with SiO2 and high-K dielectric respectively. This behavior is in good agreement with the reported experimental results. The transconductance of the strained-Si device at low temperatures has also been simulated. As expected, the mobility and hence the transconductance increases at lower temperatures due to reduced phonon scattering. However, the enhancements with high-K gate dielectric is less as compared to that with SiO2.

Effects of layer sequence and postdeposition annealing temperature on performance of La2O3 and HfO2 multilayer composite oxides on In0.53Ga0.47As for MOS capacitor application

Science.gov (United States)

Wu, Wen-Hao; Lin, Yueh-Chin; Chuang, Ting-Wei; Chen, Yu-Chen; Hou, Tzu-Ching; Yao, Jing-Neng; Chang, Po-Chun; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi

2014-03-01

In this paper, we report on high-k composite oxides that are formed by depositing multiple layers of HfO2 and La2O3 on In0.53Ga0.47As for MOS device application. Both multilayer HfO2 (0.8 nm)/La2O3 (0.8 nm)/In0.53Ga0.47As and La2O3 (0.8 nm)/HfO2 (0.8 nm)/In0.53Ga0.47As MOS structures were investigated. The effects of oxide thickness and postdeposition annealing (PDA) temperature on the interface properties of the composite oxide MOS capacitors were studied. It was found that a low CET of 1.41 nm at 1 kHz was achieved using three-layer composite oxides. On the other hand, a small frequency dispersion of 2.8% and an excellent Dit of 7.0 × 1011 cm-2·eV-1 can be achieved using multiple layers of La2O3 (0.8 nm) and HfO2 (0.8 nm) on the In0.53Ga0.47As MOS capacitor with optimum thermal treatment and layer thickness.

A Playful Programming Products Vs. Programming Concepts Matrix

DEFF Research Database (Denmark)

Allsopp, Benjamin Brink

2017-01-01

to computer program: playful programming. This research also describes a project to bring together different stakeholders (developers, educators, parents and researchers) with a common vocabulary for describing, developing, teaching with and comparing these playful programming products and develops a model......A number of Danish primary schools are involved in pilot studies where 1st to 9th grade students work with Scratch and Lego MindStorms in STEM subjects. These games may become part of the curriculum at these schools. Recent research identifies a category of games and toys that support learning...... to provide educators and researchers involved in pilot studies with an overview of which programming concepts various playful programming products exercise (a playful programming products vs. programming concepts matrix). We also add additional concept specializations and expand on the descriptions...

Wide band antireflective coatings Al2O3 / HfO2 / MgF2 for UV region

Science.gov (United States)

Winkowski, P.; Marszałek, Konstanty W.

2013-07-01

Deposition technology of the three layers antireflective coatings consists of hafnium compound are presented in this paper. Oxide films were deposited by means of e-gun evaporation in vacuum of 5x10-5 mbar in presence of oxygen and fluoride films by thermal evaporation. Substrate temperature was 250°C. Coatings were deposited onto optical lenses made from quartz glass (Corning HPFS). Thickness and deposition rate were controlled by thickness measuring system Inficon XTC/2. Simulations leading to optimization of thickness and experimental results of optical measurements carried during and after deposition process were presented. Physical thickness measurements were made during deposition process and were equal to 43 nm/74 nm/51 nm for Al2O3 / HfO2 / MgF2 respectively. Optimization was carried out for ultraviolet region from 230nm to the beginning of visible region 400 nm. In this region the average reflectance of the antireflective coating was less than 0.5% in the whole range of application.

Rapid formation of nanocrystalline HfO2 powders from amorphous hafnium hydroxide under ultrasonically assisted hydrothermal treatment

International Nuclear Information System (INIS)

Meskin, Pavel E.; Sharikov, Felix Yu.; Ivanov, Vladimir K.; Churagulov, Bulat R.; Tretyakov, Yury D.

2007-01-01

Peculiarities of hafnium hydroxide hydrothermal decomposition were studied by in situ heat flux calorimetry for the first time. It was shown that this process occurs in one exothermal stage (ΔH = -17.95 kJ mol -1 ) at 180-250 deg. C resulting in complete crystallization of amorphous phase with formation of pure monoclinic HfO 2 . It was found that the rate of m-HfO 2 formation can be significantly increased by combining hydrothermal treatment with simultaneous ultrasonic activation

HfO2 - rare earth oxide systems in the region with high content of rare earth oxide

International Nuclear Information System (INIS)

Shevchenko, A.V.; Lopato, L.M.

1982-01-01

Using the methods of annealing and hardenings (10 2 -10 4 deg/s cooling rate) and differential thermal analysis elements of state diagrams of HfO 2 - rare earth oxide (rare earths-La, Pr, Nd, Sm, Gd, Tb, Dy, Y, Er, Yb, Lu, Sc) systems from 1800 deg C up to melting in the range of 60-100 mol% rare earth oxide concentration were constructed. Regularities of HfQ 2 addition effect on high-temperature polymorphic transformations of rare earth oxides were studied. Results of investigation were discussed from viewpoint of crystal chemistry

Interface engineered HfO2-based 3D vertical ReRAM

International Nuclear Information System (INIS)

Hudec, Boris; Wang, I-Ting; Lai, Wei-Li; Chang, Che-Chia; Hou, Tuo-Hung; Jančovič, Peter; Fröhlich, Karol; Mičušík, Matej; Omastová, Mária

2016-01-01

We demonstrate a double-layer 3D vertical resistive random access memory (ReRAM) stack implementing a Pt/HfO 2 /TiN memory cell. The HfO 2 switching layer is grown by atomic layer deposition on the sidewall of a SiO 2 /TiN/SiO 2 /TiN/SiO 2 multilayer pillar. A steep vertical profile was achieved using CMOS-compatible TiN dry etching. We employ in situ TiN bottom interface engineering by ozone, which results in (a) significant forming voltage reduction which allows for forming-free operation in AC pulsed mode, and (b) non-linearity tuning of low resistance state by current compliance during Set operation. The vertical ReRAM shows excellent read and write disturb immunity between vertically stacked cells, retention over 10 4 s and excellent switching stability at 400 K. Endurance of 10 7 write cycles was achieved using 100 ns wide AC pulses while fast switching speed using pulses of only 10 ns width is also demonstrated. The active switching region was evaluated to be located closer to the bottom interface which allows for the observed high endurance. (paper)

Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates.

Science.gov (United States)

Kim, Seung Hyun; Joo, So Yeong; Jin, Hyun Soo; Kim, Woo-Byoung; Park, Tae Joo

2016-08-17

Ultrathin ZnS and ZnO films grown by atomic layer deposition (ALD) were employed as interfacial passivation layers (IPLs) for HfO2 films on InP substrates. The interfacial layer growth during the ALD of the HfO2 film was effectively suppressed by the IPLs, resulting in the decrease of electrical thickness, hysteresis, and interface state density. Compared with the ZnO IPL, the ZnS IPL was more effective in reducing the interface state density near the valence band edge. The leakage current density through the film was considerably lowered by the IPLs because the film crystallization was suppressed. Especially for the film with the ZnS IPL, the leakage current density in the low-voltage region was significantly lower than that observed for the film with the ZnO IPL, because the direct tunneling current was suppressed by the higher conduction band offset of ZnS with the InP substrate.

Memory Effect of Metal-Oxide-Silicon Capacitors with Self-Assembly Double-Layer Au Nanocrystals Embedded in Atomic-Layer-Deposited HfO2 Dielectric

International Nuclear Information System (INIS)

Yue, Huang; Hong-Yan, Gou; Qing-Qing, Sun; Shi-Jin, Ding; Wei, Zhang; Shi-Li, Zhang

2009-01-01

We report the chemical self-assembly growth of Au nanocrystals on atomic-layer-deposited HfO 2 films aminosilanized by (3-Aminopropyl)-trimethoxysilane aforehand for memory applications. The resulting Au nanocrystals show a density of about 4 × 10 11 cm −2 and a diameter range of 5–8nm. The metal-oxide-silicon capacitor with double-layer Au nanocrystals embedded in HfO 2 dielectric exhibits a large C – V hysteresis window of 11.9V for ±11 V gate voltage sweeps at 1 MHz, a flat-band voltage shift of 1.5 V after the electrical stress under 7 V for 1 ms, a leakage current density of 2.9 × 10 −8 A/cm −2 at 9 V and room temperature. Compared to single-layer Au nanocrystals, the double-layer Au nanocrystals increase the hysteresis window significantly, and the underlying mechanism is thus discussed

Ab initio study of mechanical and thermo-acoustic properties of tough ceramics: applications to HfO2 in its cubic and orthorhombic phase

International Nuclear Information System (INIS)

Ponce, C A; Casali, R A; Caravaca, M A

2008-01-01

By means of the ab initio all-electron new full-potential linear-muffin-tin orbitals method, calculations were made for elastic constants C 11 , C 12 and C 44 for Si, ZrO 2 and HfO 2 in their cubic phase, and constants C 11 , C 22 , C 33 , C 12 , C 13 , C 23 , C 44 , C 55 and C 66 for HfO 2 in its orthorhombic phase. Using the Voigt and Reuss theory, estimations were made for polycrystals of their bulk, shear and Young moduli, and Poisson coefficients. The speed of elastic wave propagations and Debye temperatures were estimated for polycrystals built from Si and the above mentioned compounds. The semicore 4f 14 electrons should be included in the valence set of Hf atom in this all-electron approach if accurate results for elastic properties under pressures are looked for

First principle simulations on the effects of oxygen vacancy in HfO2-based RRAM

Directory of Open Access Journals (Sweden)

Yuehua Dai

2015-01-01

Full Text Available HfO2-based resistive random access memory (RRAM takes advantage of oxygen vacancy (V o defects in its principle of operation. Since the change in resistivity of the material is controlled by the level of oxygen deficiency in the material, it is significantly important to study the performance of oxygen vacancies in formation of conductive filament. Excluding effects of the applied voltage, the Vienna ab initio simulation package (VASP is used to investigate the orientation and concentration mechanism of the oxygen vacancies based on the first principle. The optimal value of crystal orientation [010] is identified by means of the calculated isosurface plots of partial charge density, formation energy, highest isosurface value, migration barrier, and energy band of oxygen vacancy in ten established orientation systems. It will effectively influence the SET voltage, forming voltage, and the ON/OFF ratio of the device. Based on the results of orientation dependence, different concentration models are established along crystal orientation [010]. The performance of proposed concentration models is evaluated and analyzed in this paper. The film is weakly conductive for the samples deposited in a mixture with less than 4.167at.% of V o contents, and the resistive switching (RS phenomenon cannot be observed in this case. The RS behavior improves with an increase in the V o contents from 4.167at.% to 6.25at.%; nonetheless, it is found difficult to switch to a stable state. However, a higher V o concentration shows a more favorable uniformity and stability for HfO2-based RRAM.

Role of Ti and Pt electrodes on resistance switching variability of HfO2-based Resistive Random Access Memory

International Nuclear Information System (INIS)

Cabout, T.; Buckley, J.; Cagli, C.; Jousseaume, V.; Nodin, J.-F.; Salvo, B. de; Bocquet, M.; Muller, Ch.

2013-01-01

This paper deals with the role of platinum or titanium–titanium nitride electrodes on variability of resistive switching characteristics and electrical performances of HfO 2 -based memory elements. Capacitor-like Pt/HfO 2 (10 nm)/Pt and Ti/HfO 2 (10 nm)/TiN structures were fabricated on top of a tungsten pillar bottom electrode and integrated in-between two interconnect metal lines. First, quasi-static measurements were performed to apprehend the role of electrodes on electroforming, set and reset operations and their corresponding switching parameters. Memory elements with Pt as top and bottom electrodes exhibited a non-polar behavior with sharp decrease of current during reset operation while Ti/HfO 2 /TiN capacitors showed a bipolar switching behavior, with a gradual reset. In a second step, statistical distributions of switching parameters (voltage and resistance) were extracted from data obtained on few hundreds of capacitors. Even if the resistance in low resistive state and reset voltage was found to be comparable for both types of electrodes, the progressive reset operation observed on samples with Ti/TiN electrodes led to a lower variability of resistance in high resistive state and concomitantly of set voltage. In addition Ti–TiN electrodes enabled gaining: (i) lower forming and set voltages with significantly narrower capacitor-to-capacitor distributions; (ii) a better data retention capability (10 years at 65 °C instead of 10 years at 50 °C for Pt electrodes); (iii) satisfactory dynamic performances with lower set and reset voltages for ramp speed ranging from 10 −2 to 10 7 V/s. The significant improvement of switching behavior with Ti–TiN electrodes is mainly attributed to the formation of a native interface layer between HfO 2 oxide and Ti top electrode. - Highlights: ► HfO2 based capacitor-like structures were fabricated with Pt and Ti based electrodes. ► Influence of electrode materials on switching parameter variability is assessed. �

Biotransformation of 2,3,3,3-tetrafluoropropene (HFO-1234yf) in male, pregnant and non-pregnant female rabbits after single high dose inhalation exposure

International Nuclear Information System (INIS)

Schmidt, Tobias; Bertermann, Rüdiger; Rusch, George M.; Hoffman, Gary M.; Dekant, Wolfgang

2012-01-01

2,3,3,3-Tetrafluoropropene (HFO-1234yf) is a novel refrigerant intended for use in mobile air conditioning. It showed a low potential for toxicity in rodents studies with most NOAELs well above 10,000 ppm in guideline compliant toxicity studies. However, a developmental toxicity study in rabbits showed mortality at exposure levels of 5,500 ppm and above. No lethality was observed at exposure levels of 2,500 and 4,000 ppm. Nevertheless, increased subacute inflammatory heart lesions were observed in rabbits at all exposure levels. Since the lethality in pregnant animals may be due to altered biotransformation of HFO-1234yf and to evaluate the potential risk to pregnant women facing a car crash, this study compared the acute toxicity and biotransformation of HFO-1234yf in male, female and pregnant female rabbits. Animals were exposed to 50,000 ppm and 100,000 ppm for 1 h. For metabolite identification by 19 F NMR and LC/MS-MS, urine was collected for 48 h after inhalation exposure. In all samples, the predominant metabolites were S-(3,3,3-trifluoro-2-hydroxypropanyl)-mercaptolactic acid and N-acetyl-S-(3,3,3-trifluoro-2-hydroxypropanyl)-L-cysteine. Since no major differences in urinary metabolite pattern were observed between the groups, only N-acetyl-S-(3,3,3-trifluoro-2-hydroxypropanyl)-L-cysteine excretion was quantified. No significant differences in recovery between non-pregnant (43.10 ± 22.35 μmol) and pregnant female (50.47 ± 19.72 μmol) rabbits were observed, male rabbits exposed to 100,000 ppm for one hour excreted 86.40 ± 38.87 μmol. Lethality and clinical signs of toxicity were not observed in any group. The results suggest that the lethality of HFO-1234yf in pregnant rabbits unlikely is due to changes in biotransformation patterns or capacity in pregnant rabbits. -- Highlights: ► No lethality and clinical signs were observed. ► No differences in metabolic pattern between pregnant and non-pregnant rabbits. ► Rapid and similar metabolite

Biotransformation of 2,3,3,3-tetrafluoropropene (HFO-1234yf) in male, pregnant and non-pregnant female rabbits after single high dose inhalation exposure

Energy Technology Data Exchange (ETDEWEB)

Schmidt, Tobias [Institut für Toxikologie, Universität Würzburg, Versbacher Str. 9, 97078 Würzburg (Germany); Bertermann, Rüdiger [Institut für Anorganische Chemie, Universität Würzburg, Am Hubland, 97074 Würzburg (Germany); Rusch, George M. [Honeywell, P.O. Box 1057, Morristown, NJ 07962–1057 (United States); Hoffman, Gary M. [Huntingdon Life Sciences., East Millstone, NJ (United States); Dekant, Wolfgang, E-mail: dekant@toxi.uni-wuerzburg.de [Institut für Toxikologie, Universität Würzburg, Versbacher Str. 9, 97078 Würzburg (Germany)

2012-08-15

2,3,3,3-Tetrafluoropropene (HFO-1234yf) is a novel refrigerant intended for use in mobile air conditioning. It showed a low potential for toxicity in rodents studies with most NOAELs well above 10,000 ppm in guideline compliant toxicity studies. However, a developmental toxicity study in rabbits showed mortality at exposure levels of 5,500 ppm and above. No lethality was observed at exposure levels of 2,500 and 4,000 ppm. Nevertheless, increased subacute inflammatory heart lesions were observed in rabbits at all exposure levels. Since the lethality in pregnant animals may be due to altered biotransformation of HFO-1234yf and to evaluate the potential risk to pregnant women facing a car crash, this study compared the acute toxicity and biotransformation of HFO-1234yf in male, female and pregnant female rabbits. Animals were exposed to 50,000 ppm and 100,000 ppm for 1 h. For metabolite identification by {sup 19}F NMR and LC/MS-MS, urine was collected for 48 h after inhalation exposure. In all samples, the predominant metabolites were S-(3,3,3-trifluoro-2-hydroxypropanyl)-mercaptolactic acid and N-acetyl-S-(3,3,3-trifluoro-2-hydroxypropanyl)-L-cysteine. Since no major differences in urinary metabolite pattern were observed between the groups, only N-acetyl-S-(3,3,3-trifluoro-2-hydroxypropanyl)-L-cysteine excretion was quantified. No significant differences in recovery between non-pregnant (43.10 ± 22.35 μmol) and pregnant female (50.47 ± 19.72 μmol) rabbits were observed, male rabbits exposed to 100,000 ppm for one hour excreted 86.40 ± 38.87 μmol. Lethality and clinical signs of toxicity were not observed in any group. The results suggest that the lethality of HFO-1234yf in pregnant rabbits unlikely is due to changes in biotransformation patterns or capacity in pregnant rabbits. -- Highlights: ► No lethality and clinical signs were observed. ► No differences in metabolic pattern between pregnant and non-pregnant rabbits. ► Rapid and similar metabolite

Influence of phosphorous precursors on spectroscopic properties of Er3+-activated SiO2-HfO2-P2O5 planar waveguides

International Nuclear Information System (INIS)

Vasilchenko, I; Carpentiero, A; Chiappini, A; Chiasera, A; Ferrari, M; Vaccari, A; Lukowiak, A; Righini, G C; Vereshagin, V

2014-01-01

(70-x)SiO 2 -30HfO 2 -xP 2 O 5 (x= 5, 10 mol %) glass planar waveguides activated by 0.5 mol% Er 3 + ions were prepared by sol-gel route. Several phosphorous precursors have been investigated for the synthesis of a dielectric stable sol useful for the realization of planar waveguides. The waveguides were investigated by different diagnostic techniques. The optical properties such as refractive index, thickness, number of propagating modes and attenuation coefficient were measured at 632.8 and 543.5 nm by prism coupling technique. Transmission measurements were carried out in order to assess the transparency of the deposited films. Photoluminescence measurements and lifetime decay curves of the Er 3 + transition (4 I 13/2 → 4 I 15/2 ) were performed in order to investigate the role of P 2 O 5

Thermoluminescence in HfO_2:Eu"3"+ powders irradiated in UV

International Nuclear Information System (INIS)

Ceron R, P. V.; Montes R, E.; Rivera M, T.; Diaz G, J. A. I.; Guzman M, J.

2016-10-01

Various inorganic compounds synthesized for photo luminescent applications have also presented a thermoluminescent (Tl) response, for example the metal oxides doped with rare earths. This property extends the use of these materials to the radiation dosimetry. For this reason, in this work the Tl response is presented in HfO_2:Eu"3"+ powders synthesized by the hydrothermal path, exposed to ultraviolet (UV) radiation of 254 nm. The kinetic parameters of its brightness curve were also calculated using the Chen expressions and the analysis method based on the shape of the curve. For the powders irradiated for 10 min the highest Tl response corresponds to the sample with 5% of the impurity, which is 6.5 times higher than the signal corresponding to the intrinsic sample. Its bright curve shows a main peak with a maximum in 148 degrees Celsius and a second order kinetics. Another test with the same material shows the Tl response against the exposure time, with a maximum in the 3 minutes. These calculations and tests constitute a first approach for the study of these powders as Tl dosimeter for UV radiation. (Author)

Effects of H2 High-pressure Annealing on HfO2/Al2O3/In0.53Ga0.47As Capacitors: Chemical Composition and Electrical Characteristics

OpenAIRE

Choi, Sungho; An, Youngseo; Lee, Changmin; Song, Jeongkeun; Nguyen, Manh-Cuong; Byun, Young-Chul; Choi, Rino; McIntyre, Paul C.; Kim, Hyoungsub

2017-01-01

We studied the impact of H2 pressure during post-metallization annealing on the chemical composition of a HfO2/Al2O3 gate stack on a HCl wet-cleaned In0.53Ga0.47As substrate by comparing the forming gas annealing (at atmospheric pressure with a H2 partial pressure of 0.04?bar) and H2 high-pressure annealing (H2-HPA at 30?bar) methods. In addition, the effectiveness of H2-HPA on the passivation of the interface states was compared for both p- and n-type In0.53Ga0.47As substrates. The decomposi...

Electrical behaviour of fully solution processed HfO2 (MOS) in presence of different light illumination

Science.gov (United States)

Mondal, Sandip

2018-04-01

This experiment demonstrates the electrical behaviors of fully solution processed HfO2(MOS) in presence of different optical illumination. The capacitance voltage measurement was performed at frequency of 100 kHz with a DC gate sweep voltage of ±5V (with additional AC voltage of 100mV) in presence of deep UV (wavelength of 365nm with power of 25W) as well as white light (20W). It is found that there is a large shift in flatband voltage of 120mV due presence of white light during the CV measurement. However there is negligible change in flatband voltage (30mV) has been observed due to illumination of deep UV light.

Band Alignment and Optical Properties of (ZrO20.66(HfO20.34 Gate Dielectrics Thin Films on p-Si (100

Directory of Open Access Journals (Sweden)

Dahlang Tahir

2011-11-01

Full Text Available (ZrO20.66(HfO20.34 dielectric films on p-Si (100 were grown by atomic layer deposition method, for which the conduction band offsets, valence band offsets and band gaps were obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence and conduction band offset values for (ZrO20.66(HfO20.34 dielectric thin film, grown on Si substrate were about 5.34, 2.35 and 1.87 eV respectively. This band alignment was similar to that of ZrO2. In addition, The dielectric function ε (k, ω, index of refraction n and the extinction coefficient k for the (ZrO20.66(HfO20.34 thin films were obtained from a quantitative analysis of REELS data by comparison to detailed dielectric response model calculations using the QUEELS-ε (k,ω-REELS software package. These optical properties are similar with ZrO2 dielectric thin films.

Control of extracellular matrix assembly by syndecan-2 proteoglycan

DEFF Research Database (Denmark)

Klass, C M; Couchman, J R; Woods, A

2000-01-01

Extracellular matrix (ECM) deposition and organization is maintained by transmembrane signaling and integrins play major roles. We now show that a second transmembrane component, syndecan-2 heparan sulfate proteoglycan, is pivotal in matrix assembly. Chinese Hamster Ovary (CHO) cells were stably...... to rearrange laminin or fibronectin substrates into fibrils and to bind exogenous fibronectin. Transfection of activated alphaIIbalphaLdeltabeta3 integrin into alpha(5)-deficient CHO B2 cells resulted in reestablishment of the previously lost fibronectin matrix. However, cotransfection of this cell line with S...

New theory of effective work functions at metal/high-k dielectric interfaces : application to metal/high-k HfO2 and la2O 3 dielectric interfaces

OpenAIRE

Shiraishi, Kenji; Nakayama, Takashi; Akasaka, Yasushi; Miyazaki, Seiichi; Nakaoka, Takashi; Ohmori, Kenji; Ahmet, Parhat; Torii, Kazuyoshi; Watanabe, Heiji; Chikyow, Toyohiro; Nara, Yasuo; Iwai, Hiroshi; Yamada, Keisaku

2006-01-01

We have constructed a universal theory of the work functions at metal/high-k HfO2 and La2O3 dielectric interfaces by introducing a new concept of generalized charge neutrality levels. Our theory systematically reproduces the experimentally observed work functions of various gate metals on Hf-based high-k dielectrics, including the hitherto unpredictable behaviors of the work functions of p-metals. Our new concept provides effective guiding principles to achieving near-bandedge work functions ...

Expression and prognostic impact of matrix metalloproteinase-2 (MMP-2) in astrocytomas

DEFF Research Database (Denmark)

Ramachandran, Rahimsan K.; Sørensen, Mia D.; Aaberg-Jessen, Charlotte

2017-01-01

with diffuse astrocytoma, anaplastic astrocytoma and glioblastoma were stained immunohistochemically using a monoclonal MMP-2 antibody. The MMP-2 intensity in cytoplasm/membrane was quantified by a trained software-based classifier using systematic random sampling in 10% of the tumor area. We found MMP-2...... of this tumor. Matrix metalloproteinase-2 (MMP-2) is an extracellular matrix degrading enzyme which has been shown to play important roles in different cancers. The aim of this study was to investigate the expression and prognostic potential of MMP-2 in astrocytomas. Tissue samples from 89 patients diagnosed...

Matrix metalloproteinase-2 plays a critical role in overload induced skeletal muscle hypertrophy.

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Zhang, Qia; Joshi, Sunil K; Lovett, David H; Zhang, Bryon; Bodine, Sue; Kim, Hubert T; Liu, Xuhui

2014-01-01

extracellular matrix (ECM) components are instrumental in maintaining homeostasis and muscle fiber functional integrity. Skeletal muscle hypertrophy is associated with ECM remodeling. Specifically, recent studies have reported the involvement of matrix metalloproteinases (MMPs) in muscle ECM remodeling. However, the functional role of MMPs in muscle hypertrophy remains largely unknown. in this study, we examined the role of MMP-2 in skeletal muscle hypertrophy using a previously validated method where the plantaris muscle of mice were subjected to mechanical overload due to the surgical removal of synergist muscles (gastrocnemius and soleus). following two weeks of overload, we observed a significant increase in MMP-2 activity and up-regulation of ECM components and remodeling enzymes in the plantaris muscles of wild-type mice. However, MMP-2 knockout mice developed significantly less hypertrophy and ECM remodeling in response to overload compared to their wild-type littermates. Investigation of protein synthesis rate and Akt/mTOR signaling revealed no difference between wild-type and MMP-2 knockout mice, suggesting that a difference in hypertrophy was independent of protein synthesis. taken together, our results suggest that MMP-2 is a key mediator of ECM remodeling in the setting of skeletal muscle hypertrophy.

Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application

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Gloux Florence

2011-01-01

Full Text Available Abstract Ge nanocrystals (Ge-NCs embedded in SiN dielectrics with HfO2/SiO2 stack tunnel dielectrics were synthesized by utilizing low-energy (≤5 keV ion implantation method followed by conventional thermal annealing at 800°C, the key variable being Ge+ ion implantation energy. Two different energies (3 and 5 keV have been chosen for the evolution of Ge-NCs, which have been found to possess significant changes in structural and chemical properties of the Ge+-implanted dielectric films, and well reflected in the charge storage properties of the Al/SiN/Ge-NC + SiN/HfO2/SiO2/Si metal-insulator-semiconductor (MIS memory structures. No Ge-NC was detected with a lower implantation energy of 3 keV at a dose of 1.5 × 1016 cm-2, whereas a well-defined 2D-array of nearly spherical and well-separated Ge-NCs within the SiN matrix was observed for the higher-energy-implanted (5 keV sample for the same implanted dose. The MIS memory structures implanted with 5 keV exhibits better charge storage and retention characteristics compared to the low-energy-implanted sample, indicating that the charge storage is predominantly in Ge-NCs in the memory capacitor. A significant memory window of 3.95 V has been observed under the low operating voltage of ± 6 V with good retention properties, indicating the feasibility of these stack structures for low operating voltage, non-volatile memory devices.

Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.

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Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

2016-06-17

With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption.

Carbon-coated ZnO mat passivation by atomic-layer-deposited HfO2 as an anode material for lithium-ion batteries.

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Jung, Mi-Hee

2017-11-01

ZnO has had little consideration as an anode material in lithium-ion batteries compared with other transition-metal oxides due to its inherent poor electrical conductivity and large volume expansion upon cycling and pulverization of ZnO-based electrodes. A logical design and facile synthesis of ZnO with well-controlled particle sizes and a specific morphology is essential to improving the performance of ZnO in lithium-ion batteries. In this paper, a simple approach is reported that uses a cation surfactant and a chelating agent to synthesize three-dimensional hierarchical nanostructured carbon-coated ZnO mats, in which the ZnO mats are composed of stacked individual ZnO nanowires and form well-defined nanoporous structures with high surface areas. In order to improve the performance of lithium-ion batteries, HfO 2 is deposited on the carbon-coated ZnO mat electrode via atomic layer deposition. Lithium-ion battery devices based on the carbon-coated ZnO mat passivation by atomic layer deposited HfO 2 exhibit an excellent initial discharge and charge capacities of 2684.01 and 963.21mAhg -1 , respectively, at a current density of 100mAg -1 in the voltage range of 0.01-3V. They also exhibit cycle stability after 125 cycles with a capacity of 740mAhg -1 and a remarkable rate capability. Copyright © 2017 Elsevier Inc. All rights reserved.

Simulation study of HEMT structures with HfO2 cap layer for mitigating inverse piezoelectric effect related device failures

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Deepthi Nagulapally

2015-01-01

Full Text Available The Inverse Piezoelectric Effect (IPE is thought to contribute to possible device failure of GaN High Electron Mobility Transistors (HEMTs. Here we focus on a simulation study to probe the possible mitigation of the IPE by reducing the internal electric fields and related elastic energy through the use of high-k materials. Inclusion of a HfO2 “cap layer” above the AlGaN barrier particularly with a partial mesa structure is shown to have potential advantages. Simulations reveal even greater reductions in the internal electric fields by using “field plates” in concert with high-k oxides.

What are the assets and weaknesses of HFO detectors? A benchmark framework based on realistic simulations.

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Nicolas Roehri

Full Text Available High-frequency oscillations (HFO have been suggested as biomarkers of epileptic tissues. While visual marking of these short and small oscillations is tedious and time-consuming, automatic HFO detectors have not yet met a large consensus. Even though detectors have been shown to perform well when validated against visual marking, the large number of false detections due to their lack of robustness hinder their clinical application. In this study, we developed a validation framework based on realistic and controlled simulations to quantify precisely the assets and weaknesses of current detectors. We constructed a dictionary of synthesized elements-HFOs and epileptic spikes-from different patients and brain areas by extracting these elements from the original data using discrete wavelet transform coefficients. These elements were then added to their corresponding simulated background activity (preserving patient- and region- specific spectra. We tested five existing detectors against this benchmark. Compared to other studies confronting detectors, we did not only ranked them according their performance but we investigated the reasons leading to these results. Our simulations, thanks to their realism and their variability, enabled us to highlight unreported issues of current detectors: (1 the lack of robust estimation of the background activity, (2 the underestimated impact of the 1/f spectrum, and (3 the inadequate criteria defining an HFO. We believe that our benchmark framework could be a valuable tool to translate HFOs into a clinical environment.

HFO1234ze(E) And HFC134a Flow Boiling Inside a 4mm Horizontal Smooth Tube

OpenAIRE

Longo, Giovanni A.; Mancin, Simone; Righetti, Giulia; Zilio, Claudio

2016-01-01

Nowadays, the substitution of HFC134a with low GWP refrigerants is one of the most important challenge for refrigeration and air conditioning. The possible substitutes include natural refrigerants, such as HC600 (Butane) and HC600a (Isobutane), and also synthetic refrigerants, such as HFO1234yf and HFO1234ze(E). The HC refrigerants exhibit very low GWP, 3 and 4 HC600a and HC600 respectively, good thermodynamic and transport properties, and pressure and volumetric performance very similar to H...

Studies of the hyperfine interaction in semiconducting or isolating oxides on the examples HfO2, Ga2O3, and Al2O3

International Nuclear Information System (INIS)

Steffens, Michael

2014-01-01

On the example of the three oxide compounds of the hafnium, gallium, and aluminium among others the method of the perturbed γ-γ angular correlation (PAC) was applied in dependence on the sample temperature. Applied were thereby the PAC probe nuclei 111 Cd and 181 Ga, which were inserted in the samples by ion implantation or proced by neutron activation in the samples. In HfO 2 thereby especially the hyperfine interaction of thin layers with thicknesses from 2.7 to 17 nm and 100 nm were studied. Strongly disagreeing field gradients and a great influence of the sample surface on the measurement are shown. It could be shown that ν qO x should scale with the layer thickness of the oxide and that the temperature-dependent behaviour, which is influenced by the thermal expansion of the lattice, underlies also this scaling. Conditioned by the neighbourhood to the surface at high temperature oxygen can escape from the samples and so degrade the oxide. The studied Ga 2 O 3 layers were produced by oxidation of GaN at 1223 K in air. The structure of the oxide layer was thereby stepwise pursued with the PAC and could be modelled with an exponential time dependence. The oxidation was repeated with several samples at equal absolute oxidation time but different partition in intermediate steps. Altogether the result were shown as reproducable, the occuring differences of the hyperfine interactions are probably given by external quantities fluctuating in the oxidation. The measurement of the Al 2 O 3 sample in the PAC furnace and cryostat represents mainly a reproduction of the preceding experiments of Penner et al. In this materials the attempt held the spotlight to manipulate the temperature-dependent behaviour of the hyperfine interaction by additional doping. Over the experiments of the single materials was set the more precise consideration of dynamic hyperfine interactions on the probe nucleus 111 Cd. In the spin-correlation functions R(t) these were manifested by an

Electronic excitation induced defect dynamics in HfO2 based MOS devices investigated by in-situ electrical measurements

Science.gov (United States)

Manikanthababu, N.; Vajandar, S.; Arun, N.; Pathak, A. P.; Asokan, K.; Osipowicz, T.; Basu, T.; Nageswara Rao, S. V. S.

2018-03-01

In-situ I-V and C-V characterization studies were carried out to determine the device quality of atomic layer deposited HfO2 (2.7 nm)/SiO2 (0.6 nm)/Si-based metal oxide semiconductor devices during 120 MeV Ag ion irradiation. The influence of various tunneling mechanisms has been investigated by analyzing the I-V characteristics as a function of ion fluence. The nature of the defects created is tentatively identified by the determination of the significant tunneling processes. While the ion induced annealing of defects is observed at lower fluences, ion induced intermixing and radiation damage is found to be significant at higher fluences. The C-V characteristics also reveal significant changes at the interface and oxide trap densities: an increase in the oxide layer thickness occurs through the formation of an HfSiO interlayer. The interlayer is due to the swift heavy ion induced intermixing, which has been confirmed by X-TEM and X-ray photoelectron spectroscopy measurements.

A thorough investigation of the progressive reset dynamics in HfO2-based resistive switching structures

International Nuclear Information System (INIS)

Lorenzi, P.; Rao, R.; Irrera, F.; Suñé, J.; Miranda, E.

2015-01-01

According to previous reports, filamentary electron transport in resistive switching HfO 2 -based metal-insulator-metal structures can be modeled using a diode-like conduction mechanism with a series resistance. Taking the appropriate limits, the model allows simulating the high (HRS) and low (LRS) resistance states of the devices in terms of exponential and linear current-voltage relationships, respectively. In this letter, we show that this simple equivalent circuit approach can be extended to represent the progressive reset transition between the LRS and HRS if a generalized logistic growth model for the pre-exponential diode current factor is considered. In this regard, it is demonstrated here that a Verhulst logistic model does not provide accurate results. The reset dynamics is interpreted as the sequential deactivation of multiple conduction channels spanning the dielectric film. Fitting results for the current-voltage characteristics indicate that the voltage sweep rate only affects the deactivation rate of the filaments without altering the main features of the switching dynamics

The Development of HfO2-Rare Earth Based Oxide Materials and Barrier Coatings for Thermal Protection Systems

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Zhu, Dongming; Harder, Bryan James

2014-01-01

Advanced hafnia-rare earth oxides, rare earth aluminates and silicates have been developed for thermal environmental barrier systems for aerospace propulsion engine and thermal protection applications. The high temperature stability, low thermal conductivity, excellent oxidation resistance and mechanical properties of these oxide material systems make them attractive and potentially viable for thermal protection systems. This paper will focus on the development of the high performance and high temperature capable ZrO2HfO2-rare earth based alloy and compound oxide materials, processed as protective coating systems using state-or-the-art processing techniques. The emphasis has been in particular placed on assessing their temperature capability, stability and suitability for advanced space vehicle entry thermal protection systems. Fundamental thermophysical and thermomechanical properties of the material systems have been investigated at high temperatures. Laser high-heat-flux testing has also been developed to validate the material systems, and demonstrating durability under space entry high heat flux conditions.

Self-organization in a simple model of adaptive agents playing 2 x 2 games with arbitrary payoff matrices.

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Fort, H; Viola, S

2004-03-01

We analyze, both analytically and numerically, the self-organization of a system of "selfish" adaptive agents playing an arbitrary iterated pairwise game (defined by a 2 x 2 payoff matrix). Examples of possible games to play are the prisoner's dilemma (PD) game, the chicken game, the hero game, etc. The agents have no memory, use strategies not based on direct reciprocity nor "tags" and are chosen at random, i.e., geographical vicinity is neglected. They can play two possible strategies: cooperate (C) or defect (D). The players measure their success by comparing their utilities with an estimate for the expected benefits and update their strategy following a simple rule. Two versions of the model are studied: (1) the deterministic version (the agents are either in definite states C or D) and (2) the stochastic version (the agents have a probability c of playing C). Using a general master equation we compute the equilibrium states into which the system self-organizes, characterized by their average probability of cooperation c(eq). Depending on the payoff matrix, we show that c(eq) can take five different values. We also consider the mixing of agents using two different payoff matrices and show that any value of c(eq) can be reached by tuning the proportions of agents using each payoff matrix. In particular, this can be used as a way to simulate the effect of a fraction d of "antisocial" individuals--incapable of realizing any value to cooperation--on the cooperative regime hold by a population of neutral or "normal" agents.

Fabrication of Metal Nanoparticle Arrays in the ZrO2(Y, HfO2(Y, and GeOx Films by Magnetron Sputtering

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Oleg Gorshkov

2017-01-01

Full Text Available The single sheet arrays of Au nanoparticles (NPs embedded into the ZrO2(Y, HfO2(Y, and GeOx (x≈2 films have been fabricated by the alternating deposition of the nanometer-thick dielectric and metal films using Magnetron Sputtering followed by annealing. The structure and optical properties of the NP arrays have been studied, subject to the fabrication technology parameters. The possibility of fabricating dense single sheet Au NP arrays in the matrices listed above with controlled NP sizes (within 1 to 3 nm and surface density has been demonstrated. A red shift of the plasmonic optical absorption peak in the optical transmission spectra of the nanocomposite films (in the wavelength band of 500 to 650 nm has been observed. The effect was attributed to the excitation of the collective surface plasmon-polaritons in the dense Au NP arrays. The nanocomposite films fabricated in the present study can find various applications in nanoelectronics (e.g., single electronics, nonvolatile memory devices, integrated optics, and plasmonics.

Microstructure Evolution and Durability of Advanced Environmental Barrier Coating Systems for SiC/SiC Ceramic Matrix Composites

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Zhu, Dongming; Evans, Laura J.; McCue, Terry R.; Harder, Bryan

2016-01-01

Environmental barrier coated SiC-SiC ceramic matrix composites (CMCs) systems will play a crucial role in next generation turbine engines for hot-section component applications because of their ability to significantly increase engine operating temperatures with improved efficiency, reduce engine weight and cooling requirements. Advanced HfO2 and rare earth silicate environmental barrier coatings (EBCs), along with multicomponent hafnium and rare earth silicide EBC bond coats have been developed. The coating degradation mechanisms in the laboratory simulated engine thermal cycling, and fatigue-creep operating environments are also being investigated. This paper will focus on the microstructural and compositional evolutions of an advanced environmental barrier coating system on a SiC-SiC CMC substrate during the high temperature simulated durability tests, by using a Field Emission Gun Scanning Electron Microscopy, Energy Dispersive Spectroscopy (EDS) and Wavelength Dispersive Spectroscopy (WDS). The effects of Calcium-Magnesium-Alumino-Silicate (CMAS) from road sand or volcano-ash deposits on the degradation mechanisms of the environmental barrier coating systems will also be discussed. The detailed analysis results help understand the EBC-CMC system performance, aiming at the durability improvements to achieve more robust, prime-reliant environmental barrier coatings.

Combined Thermomechanical and Environmental Durability of Environmental Barrier Coating Systems on SiC/SiC Ceramic Matrix Composites

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Zhu, Dongming; Harder, Bryan; Bhatt, Ramakrishna

2016-01-01

Environmental barrier coatings (EBCs) and SiC/SiC ceramic matrix composites (CMCs) will play a crucial role in next generation turbine engines for hot-section component applications. The development of prime-reliant environmental barrier coatings is essential to the EBC-CMC system durability, ensuring the successful implementations of the high temperature and lightweight engine component technologies for engine applications.This paper will emphasize recent NASA environmental barrier coating and CMC developments for SiC/SiC turbine airfoil components, utilizing advanced coating compositions and processing methods. The emphasis has been particularly placed on thermomechanical and environment durability evaluations of EBC-CMC systems. We have also addressed the integration of the EBCs with advanced SiC/SiC CMCs, and studied the effects of combustion environments and Calcium-Magnesium-Alumino-Silicate (CMAS) deposits on the durability of the EBC-CMC systems under thermal gradient and mechanical loading conditions. Advanced environmental barrier coating systems, including multicomponent rare earth silicate EBCs and HfO2-Si based bond coats, will be discussed for the performance improvements to achieve better temperature capability and CMAS resistance for future engine operating conditions.

Effects of H2 High-pressure Annealing on HfO2/Al2O3/In0.53Ga0.47As Capacitors: Chemical Composition and Electrical Characteristics.

Science.gov (United States)

Choi, Sungho; An, Youngseo; Lee, Changmin; Song, Jeongkeun; Nguyen, Manh-Cuong; Byun, Young-Chul; Choi, Rino; McIntyre, Paul C; Kim, Hyoungsub

2017-08-29

We studied the impact of H 2 pressure during post-metallization annealing on the chemical composition of a HfO 2 /Al 2 O 3 gate stack on a HCl wet-cleaned In 0.53 Ga 0.47 As substrate by comparing the forming gas annealing (at atmospheric pressure with a H 2 partial pressure of 0.04 bar) and H 2 high-pressure annealing (H 2 -HPA at 30 bar) methods. In addition, the effectiveness of H 2 -HPA on the passivation of the interface states was compared for both p- and n-type In 0.53 Ga 0.47 As substrates. The decomposition of the interface oxide and the subsequent out-diffusion of In and Ga atoms toward the high-k film became more significant with increasing H 2 pressure. Moreover, the increase in the H 2 pressure significantly improved the capacitance‒voltage characteristics, and its effect was more pronounced on the p-type In 0.53 Ga 0.47 As substrate. However, the H 2 -HPA induced an increase in the leakage current, probably because of the out-diffusion and incorporation of In/Ga atoms within the high-k stack.

Characteristics of multilevel storage and switching dynamics in resistive switching cell of Al2O3/HfO2/Al2O3 sandwich structure

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Liu, Jian; Yang, Huafeng; Ma, Zhongyuan; Chen, Kunji; Zhang, Xinxin; Huang, Xinfan; Oda, Shunri

2018-01-01

We reported an Al2O3/HfO2/Al2O3 sandwich structure resistive switching device with significant improvement of multilevel cell (MLC) operation capability, which exhibited that four stable and distinct resistance states (one low resistance state and three high resistance states) can be achieved by controlling the Reset stop voltages (V Reset-stop) during the Reset operation. The improved MLC operation capability can be attributed to the R HRS/R LRS ratio enhancement resulting from increasing of the series resistance and decreasing of leakage current by inserting two Al2O3 layers. For the high-speed switching applications, we studied the initial switching dynamics by using the measurements of the pulse width and amplitude dependence of Set and Reset switching characteristics. The results showed that under the same pulse amplitude conditions, the initial Set progress is faster than the initial Reset progress, which can be explained by thermal-assisted electric field induced rupture model in the oxygen vacancies conductive filament. Thus, proper combination of varying pulse amplitude and width can help us to optimize the device operation parameters. Moreover, the device demonstrated ultrafast program/erase speed (10 ns) and good pulse switching endurance (105 cycles) characteristics, which are suitable for high-density and fast-speed nonvolatile memory applications.

Matrix Metallopeptidase 14 Plays an Important Role in Regulating Tumorigenic Gene Expression and Invasion Ability of HeLa Cells.

Science.gov (United States)

Zhang, Ying-Hui; Wang, Juan-Juan; Li, Min; Zheng, Han-Xi; Xu, Lan; Chen, You-Guo

2016-03-01

The objectives of this study were to investigate the functional effect of matrix metallopeptidase 14 (MMP14) on cell invasion in cervical cancer cells (HeLa line) and to study the underlying molecular mechanisms. Expression vector of short hairpin RNA targeting MMP14 was treated in HeLa cells, and then, transfection efficiency was verified by a florescence microscope. Transwell assay was used to investigate cell invasion ability in HeLa cells. Quantitative polymerase chain reaction and Western blotting analysis were used to detect the expression of MMP14 and relative factors in messenger RNA and protein levels, respectively. Matrix metallopeptidase 14 short hairpin RNA expression vector transfection obviously decreased MMP14 expression in messenger RNA and protein levels. Down-regulation of MMP14 suppressed invasion ability of HeLa cells and reduced transforming growth factor β1 and vascular endothelial growth factor B expressions. Furthermore, MMP14 knockdown decreased bone sialoprotein and enhanced forkhead box protein L2 expression in both RNA and protein levels. Matrix metallopeptidase 14 plays an important role in regulating invasion of HeLa cells. Matrix metallopeptidase 14 knockdown contributes to attenuating the malignant phenotype of cervical cancer cell.

Effect of structural evolution of ZnO/HfO2 nanocrystals on Eu2+/Eu3+ emission in glass-ceramic waveguides for photonic applications.

Science.gov (United States)

Ghosh, Subhabrata; Bhaktha B N, Shivakiran

2018-06-01

Eu-doped 70SiO 2 -23HfO 2 -7ZnO (mol%) glass-ceramic waveguides have been fabricated by sol-gel method as a function of heat-treatment temperatures for on-chip blue-light emitting source applications. Structural evolution of spherical ZnO and spherical as well as rod-like HfO 2 nanocrystalline structures have been observed with heat-treatments at different temperatures. Initially, in the as-prepared samples at 900 ◦ C, both, Eu 2+ as well as Eu 3+ ions are found to be present in the ternary matrix. With controlled heat-treatments of up to 1000 ◦ C for 2 h, local environment of Eu-ions become more crystalline in nature and the reduction of Eu 3+ to Eu 2+ takes place in such ZnO/HfO 2 crystalline environments. In these ternary glass-ceramic waveguides, heat-treated at higher temperatures, the blue-light emission characteristic, which is the signature of 4f 6 5d [Formula: see text] 4f 7 energy level transition of Eu 2+ ions is found to be greatly enhanced. The as-prepared glass-ceramic waveguides exhibit a propagation loss of 0.4 ± 0.2 dB cm -1 at 632.8 nm. Though the propagation losses increase with the growth of nanocrystals, the added functionalities achieved in the optimally heat-treated Eu-doped 70SiO 2 -23HfO 2 -7ZnO (mol%) waveguides, make them a viable functional optical material for the fabrication of on-chip blue-light emitting sources for integrated optic applications.

Effect of structural evolution of ZnO/HfO2 nanocrystals on Eu2+/Eu3+ emission in glass-ceramic waveguides for photonic applications

Science.gov (United States)

Ghosh, Subhabrata; N, Shivakiran Bhaktha B.

2018-06-01

Eu-doped 70SiO2–23HfO2–7ZnO (mol%) glass-ceramic waveguides have been fabricated by sol-gel method as a function of heat-treatment temperatures for on-chip blue-light emitting source applications. Structural evolution of spherical ZnO and spherical as well as rod-like HfO2 nanocrystalline structures have been observed with heat-treatments at different temperatures. Initially, in the as-prepared samples at 900 ◦C, both, Eu2+ as well as Eu3+ ions are found to be present in the ternary matrix. With controlled heat-treatments of up to 1000 ◦C for 2 h, local environment of Eu-ions become more crystalline in nature and the reduction of Eu3+ to Eu2+ takes place in such ZnO/HfO2 crystalline environments. In these ternary glass-ceramic waveguides, heat-treated at higher temperatures, the blue-light emission characteristic, which is the signature of 4f 65d \\to 4f 7 energy level transition of Eu2+ ions is found to be greatly enhanced. The as-prepared glass-ceramic waveguides exhibit a propagation loss of 0.4 ± 0.2 dB cm‑1 at 632.8 nm. Though the propagation losses increase with the growth of nanocrystals, the added functionalities achieved in the optimally heat-treated Eu-doped 70SiO2–23HfO2–7ZnO (mol%) waveguides, make them a viable functional optical material for the fabrication of on-chip blue-light emitting sources for integrated optic applications.

Ion/Ioff ratio enhancement and scalability of gate-all-around nanowire negative-capacitance FET with ferroelectric HfO2

Science.gov (United States)

Jang, Kyungmin; Saraya, Takuya; Kobayashi, Masaharu; Hiramoto, Toshiro

2017-10-01

We have investigated the energy efficiency and scalability of ferroelectric HfO2 (FE:HfO2)-based negative-capacitance field-effect-transistor (NCFET) with gate-all-around (GAA) nanowire (NW) channel structure. Analytic simulation is conducted to characterize NW-NCFET by varying NW diameter and/or thickness of gate insulator as device structural parameters. Due to the negative-capacitance effect and GAA NW channel structure, NW-NCFET is found to have 5× higher Ion/Ioff ratio than classical NW-MOSFET and 2× higher than double-gate (DG) NCFET, which results in wider design window for high Ion/Ioff ratio. To analyze these obtained results from the viewpoint of the device scalability, we have considered constraints regarding very limited device structural spaces to fit by the gate insulator and NW channel for aggresively scaled gate length (Lg) and/or very tight NW pitch. NW-NCFET still has design point with very thinned gate insulator and/or narrowed NW. Therefore, FE:HfO2-based NW-NCFET is applicable to the aggressively scaled technology node of sub-10 nm Lg and to the very tight NW integration of sub-30 nm NW pitch for beyond 7 nm technology. From 2011 to 2014, he engaged in developing high-speed optical transceiver module as an alternative military service in Republic of Korea. His research interest includes the development of steep slope MOSFETs for high energy-efficient operation and ferroelectric HfO2-based semiconductor devices, and fabrication of nanostructured devices. He joined the IBM T.J. Watson Research Center, Yorktown Heights, NY, in 2010, where he worked on advanced CMOS technologies such as FinFET, nanowire FET, SiGe channel and III-V channel. He was also engaged in launching 14 nm SOI FinFET and RMG technology development. Since 2014, he has been an Associate Professor in Institute of Industrial Science, University of Tokyo, Tokyo, Japan, where he has been working on ultralow power transistor and memory technology. Dr. Kobayashi is a member of IEEE

UV-laser-light-controlled photoluminescence of metal oxide nanoparticles in different gas atmospheres: BaTiO3, SrTiO3 and HfO2

International Nuclear Information System (INIS)

Mochizuki, Shosuke; Saito, Takashi; Yoshida, Kaori

2012-01-01

The photoluminescence (PL) enhancement has been studied at room temperature using various specimen atmospheres (O 2 gas, CO 2 gas, CO 2 -H 2 mixture gas, Ar-H 2 mixture gas and vacuum) under 325 nm laser light irradiation on various metal oxides. Of them, the results obtained for BaTiO 3 nanocrystals, SrTiO 3 ones and HfO 2 powder crystal are given in the present paper. Their PL were considerably increased in intensity by irradiation of 325 nm laser light in CO 2 gas and CO 2 -H 2 mixture gas. The cause of the PL intensity enhancements is discussed in the light of the exciton theory, the defect chemistry and the photocatalytic theory. The results may be applied for the utilization of greenhouse gas (CO 2 ) and the optical sensor for CO 2 gas.

Microcracking and mechanical properties of Hafnia-Zirconia toughened alumina composites

International Nuclear Information System (INIS)

Li, H.P.S.; Stevens, R.

1995-01-01

Despite the remarkably similar crystal structures and phase transformations of HfO 2 and ZrO 2 , the tetragonal to monoclinic transformation temperature for HfO 2 takes place six hundred degrees higher than that for ZrO 2 . This suggests the potential for HfO 2 as an engineering material for use at elevated temperatures (>700 C). Alloying HfO 2 with ZrO 2 has been suggested a feasible high-temperature toughening strategy for ZrO 2 -toughened ceramics. The role of ZrO 2 as a second phase toughening agent for ceramic composites has long been recognised and a considerable number of studies reported. In contrast, HfO 2 -toughened ceramics, have not been investigated in detail. This paper gives an account of composite ceramics consisting of an Al 2 O 3 matrix, mixed with unstabilised (Zr-Hf)O 2 inclusions containing volume fractions, of 0, 1, 5, 10, 15, and 25 vol. %, developed to investigate the effects of the second phase content on the microstructure and mechanical properties. A simple cubic packing model of microcracking, based on an ''end-point'' thermodynamic approach, is discussed with respect to microcrack extension for a critical volume fraction of second phase content. The results show an Al 2 O 3 matrix containing 5 vol. % of Hf 0.25 Zr 0.75 O 2 inclusions to give the optimum properties. Using the packing model, the critical volume fraction is predicted at 10 vol. %, which is in a good agreement with experimental results. (orig.)

Effect of annealing on structural changes and oxygen diffusion in amorphous HfO2 using classical molecular dynamics

Science.gov (United States)

Shen, Wenqing; Kumari, Niru; Gibson, Gary; Jeon, Yoocharn; Henze, Dick; Silverthorn, Sarah; Bash, Cullen; Kumar, Satish

2018-02-01

Non-volatile memory is a promising alternative to present memory technologies. Oxygen vacancy diffusion has been widely accepted as one of the reasons for the resistive switching mechanism of transition-metal-oxide based resistive random access memory. In this study, molecular dynamics simulation is applied to investigate the diffusion coefficient and activation energy of oxygen in amorphous hafnia. Two sets of empirical potential, Charge-Optimized Many-Body (COMB) and Morse-BKS (MBKS), were considered to investigate the structural and diffusion properties at different temperatures. COMB predicts the activation energy of 0.53 eV for the temperature range of 1000-2000 K, while MBKS predicts 2.2 eV at high temperature (1600-2000 K) and 0.36 eV at low temperature (1000-1600 K). Structural changes and appearance of nano-crystalline phases with increasing temperature might affect the activation energy of oxygen diffusion predicted by MBKS, which is evident from the change in coordination number distribution and radial distribution function. None of the potentials make predictions that are fully consistent with density functional theory simulations of both the structure and diffusion properties of HfO2. This suggests the necessity of developing a better multi-body potential that considers charge exchange.

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

Science.gov (United States)

Li, Xuefei; Xiong, Xiong; Li, Tiaoyang; Li, Sichao; Zhang, Zhenfeng; Wu, Yanqing

2017-12-27

Because of their wide bandgap and ultrathin body properties, two-dimensional materials are currently being pursued for next-generation electronic and optoelectronic applications. Although there have been increasing numbers of studies on improving the performance of MoS 2 field-effect transistors (FETs) using various methods, the dielectric interface, which plays a decisive role in determining the mobility, interface traps, and thermal transport of MoS 2 FETs, has not been well explored and understood. In this article, we present a comprehensive experimental study on the effect of high-k dielectrics on the performance of few-layer MoS 2 FETs from 300 to 4.3 K. Results show that Al 2 O 3 /HfO 2 could boost the mobility and drain current. Meanwhile, MoS 2 transistors with Al 2 O 3 /HfO 2 demonstrate a 2× reduction in oxide trap density compared to that of the devices with the conventional SiO 2 substrate. Also, we observe a negative differential resistance effect on the device with 1 μm-channel length when using conventional SiO 2 as the gate dielectric due to self-heating, and this is effectively eliminated by using the Al 2 O 3 /HfO 2 gate dielectric. This dielectric engineering provides a highly viable route to realizing high-performance transition metal dichalcogenide-based FETs.

An experimental investigation on the substitution of HFC134a with HFO1234YF in a domestic refrigerator

International Nuclear Information System (INIS)

Aprea, Ciro; Greco, Adriana; Maiorino, Angelo

2016-01-01

Highlights: • An experimental comparison between R134A and HFO1234YF is presented. • A domestic refrigerator made to work with R134A is analysed. • The annual energy consumptions of the device are reported. • The energy saving achievable after the drop-in is evaluated. - Abstract: The latest international regulations on the reduction of greenhouse gases are strongly redesigning the scenario of use of refrigerants, gradually eliminating the possibility of employing the HFCs. Among all sectors of refrigeration, one of the most affected by these restrictions is the domestic refrigeration. Although for it have been suggested some solutions, such as the construction of household refrigerator operating with the hydrocarbons, there remains the need to find a substitute for HFC134a. In particular, the substitution may involve both existing machines and already in operation, which cannot be loaded with hydrocarbons, and new devices. With the aim of finding a simple implementation solution, in the present work, it is reported an experimental investigation carried out on a domestic refrigerator designed and built to operate with HFC134a and for which a drop-in with HFO1234yf has been realised. The experimentation has been addressed so as to highlight the behaviour of the system as a result of the drop-in, with a particular interest in the energy performance variation. A slight energy saving has been recorded with HFO1234yf, and an improving of the cooling capacity has been noticed.

Electrical characteristics and interface properties of ALD-HfO2/AlGaN/GaN MIS-HEMTs fabricated with post-deposition annealing

Science.gov (United States)

Kubo, Toshiharu; Egawa, Takashi

2017-12-01

HfO2/AlGaN/GaN metal-insulator-semiconductor (MIS)-type high electron mobility transistors (HEMTs) on Si substrates were fabricated by atomic layer deposition of HfO2 layers and post-deposition annealing (PDA). The current-voltage characteristics of the MIS-HEMTs with as-deposited HfO2 layers showed a low gate leakage current (I g) despite the relatively low band gap of HfO2, and a dynamic threshold voltage shift (ΔV th) was observed. After PDA above 500 °C, ΔV th was reduced from 2.9 to 0.7 V with an increase in I g from 2.2 × 10-7 to 4.8 × 10-2 mA mm-1. Effects of the PDA on the HfO2 layer and the HfO2/AlGaN interface were investigated by x-ray photoelectron spectroscopy (XPS) using synchrotron radiation. XPS data showed that oxygen vacancies exist in the as-deposited HfO2 layers and they disappeared with an increase in the PDA temperature. These results indicate that the deep electron traps that cause ΔV th are related to the oxygen vacancies in the HfO2 layers.

Matrix Metalloproteinase Enzyme Family

Directory of Open Access Journals (Sweden)

Ozlem Goruroglu Ozturk

2013-04-01

Full Text Available Matrix metalloproteinases play an important role in many biological processes such as embriogenesis, tissue remodeling, wound healing, and angiogenesis, and in some pathological conditions such as atherosclerosis, arthritis and cancer. Currently, 24 genes have been identified in humans that encode different groups of matrix metalloproteinase enzymes. This review discuss the members of the matrix metalloproteinase family and their substrate specificity, structure, function and the regulation of their enzyme activity by tissue inhibitors. [Archives Medical Review Journal 2013; 22(2.000: 209-220

Flow regime visualization and pressure drops of HFO-1234yf, R-134a and R-410A during downward two-phase flow in vertical return bends

International Nuclear Information System (INIS)

Padilla, Miguel; Revellin, Rémi; Wallet, Jérémy; Bonjour, Jocelyn

2013-01-01

Highlights: ► Visual observation of two-phase flow regimes during downward flow in a return bend. ► Bubble and vapor slug dynamical behaviors in downward slug flow are reported. ► Perturbation lengths up- and downstream of the return bend have been investigated. ► Measurement of 285 pressure drop data points for HFO-1234yf, R-134a and R-410A. -- Abstract: This paper provides a qualitative visual observation of the two-phase flow patterns for HFO-1234yf and R-134a during downward flow in a vertical 6.7 mm inner diameter glass return bend. The different flow regimes observed are: slug, intermittent and annular flows. Bubble and vapor slug dynamical behaviors in downward slug flow are reported for HFO-1234yf. In addition, to determine the perturbation lengths up- and downstream of the return bend, the total pressure drop has been measured at different pressure tap location up- and downstream of the singularity. Furthermore, 285 pressure drop data points measured for two-phase flow of HFO-1234yf, R-134a and R-410A in vertical downward flow return bends are presented. The flow behavior in the return bend, which is subjected to the complex combined actions of gravity and centrifugal force was expressed in terms of the vapor Froude number. This experimental pressure drop database, which is included in the appendix, is compared to four well-known prediction methods available in the literature

Ab initio localized basis set study of structural parameters and elastic properties of HfO2 polymorphs

International Nuclear Information System (INIS)

Caravaca, M A; Casali, R A

2005-01-01

The SIESTA approach based on pseudopotentials and a localized basis set is used to calculate the electronic, elastic and equilibrium properties of P 2 1 /c, Pbca, Pnma, Fm3m, P4 2 nmc and Pa3 phases of HfO 2 . Using separable Troullier-Martins norm-conserving pseudopotentials which include partial core corrections for Hf, we tested important physical properties as a function of the basis set size, grid size and cut-off ratio of the pseudo-atomic orbitals (PAOs). We found that calculations in this oxide with the LDA approach and using a minimal basis set (simple zeta, SZ) improve calculated phase transition pressures with respect to the double-zeta basis set and LDA (DZ-LDA), and show similar accuracy to that determined with the PPPW and GGA approach. Still, the equilibrium volumes and structural properties calculated with SZ-LDA compare better with experiments than the GGA approach. The bandgaps and elastic and structural properties calculated with DZ-LDA are accurate in agreement with previous state of the art ab initio calculations and experimental evidence and cannot be improved with a polarized basis set. These calculated properties show low sensitivity to the PAO localization parameter range between 40 and 100 meV. However, this is not true for the relative energy, which improves upon decrease of the mentioned parameter. We found a non-linear behaviour in the lattice parameters with pressure in the P 2 1 /c phase, showing a discontinuity of the derivative of the a lattice parameter with respect to external pressure, as found in experiments. The common enthalpy values calculated with the minimal basis set give pressure transitions of 3.3 and 10.8?GPa for P2 1 /c → Pbca and Pbca → Pnma, respectively, in accordance with different high pressure experimental values

Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-K oxide/SiO_2/Si structure

International Nuclear Information System (INIS)

Vexler, M. I.; Grekhov, I. V.

2016-01-01

The features of electron tunneling from or into the silicon valence band in a metal–insulator–semiconductor system with the HfO_2(ZrO_2)/SiO_2 double-layer insulator are theoretically analyzed for different modes. It is demonstrated that the valence-band current plays a less important role in structures with HfO_2(ZrO_2)/SiO_2 than in structures containing only silicon dioxide. In the case of a very wide-gap high-K oxide ZrO_2, nonmonotonic behavior related to tunneling through the upper barrier is predicted for the valence-band–metal current component. The use of an insulator stack can offer certain advantages for some devices, including diodes, bipolar tunnel-emitter transistors, and resonant-tunneling diodes, along with the traditional use of high-K insulators in a field-effect transistor.

Ab initio study of the elastic properties of single and polycrystal TiO2, ZrO2 and HfO2 in the cotunnite structure

International Nuclear Information System (INIS)

Caravaca, M A; Mino, J C; Perez, V J; Casali, R A; Ponce, C A

2009-01-01

In this work, we study theoretically the elastic properties of the orthorhombic (Pnma) high-pressure phase of IV-B group oxides: titania, zirconia and hafnia. By means of the self-consistent SIESTA code, pseudopotentials, density functional theory in the LDA and GGA approximations, the total energies, hydrostatic pressures and stress tensor components are calculated. From the stress-strain relationships, in the linear regime, the elastic constants C ij are determined. Derived elastic constants, such as bulk, Young's and shear modulus, Poisson coefficient and brittle/ductile behavior are estimated with the polycrystalline approach, using Voigt-Reuss-Hill theories. We have found that C 11 , C 22 and C 33 elastic constants of hafnia and zirconia show increased strength with respect to the experimental values of the normal phase, P 2 1 /c. A similar situation applies to titania if these constants are compared with its normal phase, rutile. However, shear elastic constants C 44 , C 55 and C 66 are similar to the values found in the normal phase. This fact increases the compound anisotropy as well as its ductile behavior. The dependence of unit-cell volumes under hydrostatic pressures is also analyzed. P-V data, fitted to third-order Birch-Murnaghan equations of state, provide the bulk modulus B 0 and its pressure derivatives B' 0 . In this case, LDA estimations show good agreement with respect to recent measured bulk moduli of ZrO 2 and HfO 2 . Thermo-acoustic properties, e.g. the propagation speed of transverse, longitudinal elastic waves together with associated Debye temperatures, are also estimated.

Sparse Non-negative Matrix Factor 2-D Deconvolution for Automatic Transcription of Polyphonic Music

DEFF Research Database (Denmark)

Schmidt, Mikkel N.; Mørup, Morten

2006-01-01

We present a novel method for automatic transcription of polyphonic music based on a recently published algorithm for non-negative matrix factor 2-D deconvolution. The method works by simultaneously estimating a time-frequency model for an instrument and a pattern corresponding to the notes which...... are played based on a log-frequency spectrogram of the music....

Matrix metalloproteinase 2 (MMP-2) levels are increased in active acromegaly patients.

Science.gov (United States)

Karci, Alper Cagri; Canturk, Zeynep; Tarkun, Ilhan; Cetinarslan, Berrin

2017-07-01

During follow-up of acromegaly patients, there is a discordance rate of 30% between the measurements of growth hormone and insulin-like growth factor-1 levels. Further tests are required to determine disease activity in patients with discordant results. This study was planned to investigate an association of serum levels of matrix metalloproteinase-2, matrix metalloproteinase-9, and cathepsin B with disease activity in acromegaly patients. In this study, 64 acromegaly patients followed in our clinic were divided into two groups according to the 2010 consensus criteria for cure of acromegaly as patients with active disease (n = 24) and patients with controlled disease (n = 40). Serum matrix metalloproteinase-2, matrix metalloproteinase-9, and cathepsin B levels were measured by the enzyme-linked immunosorbent assay method. The mean serum matrix metalloproteinase-2 level was significantly higher in the active acromegaly patients than in the controlled acromegaly patients (150.1 ± 54.5 ng/mL vs. 100.2 ± 44.6 ng/mL; p matrix metalloproteinase-9 and cathepsin B levels (p = 0.205 and p = 0.598, respectively). Serum matrix metalloproteinase-2 levels of 118.3 ng/mL and higher had a sensitivity of 75% and a specificity of 77.5% in determining active disease. The risk of active acromegaly was 3.3 fold higher in the patients with a matrix metalloproteinase-2 level of >118.3 ng/mL than in the patients with a matrix metalloproteinase-2 level of matrix metalloproteinase-2 level is increased in the active acromegaly patients and a threshold value in determining active disease was defined for serum matrix metalloproteinase-2 level. This study is the first to compare acromegaly patients having active or controlled disease in terms of matrix metalloproteinase-2 and matrix metalloproteinase-9 levels. The results need to be confirmed by a study that will be conducted in a larger patient group also including a healthy control group to demonstrate the

Inhibition of matrix metalloproteinase-2 by PARP inhibitors

International Nuclear Information System (INIS)

Nicolescu, Adrian C.; Holt, Andrew; Kandasamy, Arulmozhi D.; Pacher, Pal; Schulz, Richard

2009-01-01

Matrix metalloproteinase-2 (MMP-2), a ubiquitously expressed zinc-dependent endopeptidase, and poly(ADP-ribosyl) polymerase (PARP), a nuclear enzyme regulating DNA repair, are activated by nitroxidative stress associated with various pathologies. As MMP-2 plays a detrimental role in heart injuries resulting from enhanced nitroxidative stress, where PARP and MMP inhibitors are beneficial, we hypothesized that PARP inhibitors may affect MMP-2 activity. Using substrate degradation assays to determine MMP-2 activity we found that four PARP inhibitors (3-AB, PJ-34, 5-AIQ, and EB-47) inhibited 64 kDa MMP-2 in a concentration-dependent manner. The IC 50 values of PJ-34 and 5-AIQ were in the high micromolar range and comparable to those of known MMP-2 inhibitors doxycycline, minocycline or o-phenanthroline, whereas those for 3-AB and EB-47 were in the millimolar range. Co-incubation of PARP inhibitors with doxycycline showed an additive inhibition of MMP-2 that was significant for 3-AB alone. These data demonstrate that the protective effects of some PARP inhibitors may include inhibition of MMP-2 activity.

Inhibition of matrix metalloproteinase-2 by PARP inhibitors

Energy Technology Data Exchange (ETDEWEB)

Nicolescu, Adrian C.; Holt, Andrew; Kandasamy, Arulmozhi D. [Departments of Pharmacology and Pediatrics, Cardiovascular Research Centre, University of Alberta, Edmonton, Alta., Canada T6G 2S2 (Canada); Pacher, Pal [National Institutes of Health, NIAAA, Laboratory of Physiologic Studies, Bethesda, MD (United States); Schulz, Richard, E-mail: richard.schulz@ualberta.ca [Departments of Pharmacology and Pediatrics, Cardiovascular Research Centre, University of Alberta, Edmonton, Alta., Canada T6G 2S2 (Canada)

2009-10-02

Matrix metalloproteinase-2 (MMP-2), a ubiquitously expressed zinc-dependent endopeptidase, and poly(ADP-ribosyl) polymerase (PARP), a nuclear enzyme regulating DNA repair, are activated by nitroxidative stress associated with various pathologies. As MMP-2 plays a detrimental role in heart injuries resulting from enhanced nitroxidative stress, where PARP and MMP inhibitors are beneficial, we hypothesized that PARP inhibitors may affect MMP-2 activity. Using substrate degradation assays to determine MMP-2 activity we found that four PARP inhibitors (3-AB, PJ-34, 5-AIQ, and EB-47) inhibited 64 kDa MMP-2 in a concentration-dependent manner. The IC{sub 50} values of PJ-34 and 5-AIQ were in the high micromolar range and comparable to those of known MMP-2 inhibitors doxycycline, minocycline or o-phenanthroline, whereas those for 3-AB and EB-47 were in the millimolar range. Co-incubation of PARP inhibitors with doxycycline showed an additive inhibition of MMP-2 that was significant for 3-AB alone. These data demonstrate that the protective effects of some PARP inhibitors may include inhibition of MMP-2 activity.

Evaluation of matrix metalloproteinases-2 (MMP-2) and tissue inhibitors of metalloproteinases-2 (TIMP-2) in oral submucous fibrosis and their correlation with disease severity.

Science.gov (United States)

Shrestha, A; Carnelio, S

2013-01-01

Oral submucous fibrosis (OSF), a potentially malignant oral lesion, is a form of pathological fibrosis affecting the oral mucosa. It results from an imbalance in equilibrium of the normal process of synthesis and degradation of extra cellular matrix. Matrix metalloproteinases and its inhibitors play important role in remodeling of the extra cellular matrix which are important in progression and pathogenesis of potentially malignant lesions to malignancy. To evaluate the expression and distribution of Matrix metalloproteinases-2 (MMP- 2) and Tissue inhibitor of metalloproteinases-2 (TIMP-2) in different grades of Oral Submucous Fibrosis(OSF). Immunohistochemical analysis for MMP-2 and its TIMP-2 was performed in 30 histopathologically confirmed, formalin fixed, paraffin embedded specimens of OSF. A semi-quantitative analysis was done to assess the expression, distribution and comparison of these in various stages of this disease. All moderately advanced cases and 64.2% for MMP-2 and 78.5% for TIMP-2 of early stage cases showed positivity. Between two stages of OSF, statistically significant differences were noted in expression of TIMP-2 in lamina propria, deep connective tissue and supra basal layers (p<0.05) and basal and supra basal layers for MMP-2 (p<0.05). The simultaneous increase in expression of MMP-2 and TIMP-2 with advancing stages of OSF can provide a basis for considering the proteases as important mediators in the pathogenesis and progression of OSF which could aid in identifying the aggressiveness of the condition and elucidate its role in its malignant transformation.

Determination of diffuse double layer protonation constants for hydrous ferric oxide (HFO): supporting evidence for the Dzombak and Morel compilation

CSIR Research Space (South Africa)

Pretorius, PJ

1998-01-01

Full Text Available of the experimental system suggests that titration points below pH 4 should not be used for the determination of protonation constants because of potential HFO dissolution. Surface protonation constant, PZC and binding site estimates agree excellently with currently...

Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2-x Structure with a Sub-μm(2) Cell Area.

Science.gov (United States)

Yoon, Jung Ho; Yoo, Sijung; Song, Seul Ji; Yoon, Kyung Jean; Kwon, Dae Eun; Kwon, Young Jae; Park, Tae Hyung; Kim, Hye Jin; Shao, Xing Long; Kim, Yumin; Hwang, Cheol Seong

2016-07-20

To replace or succeed the present NAND flash memory, resistive switching random access memory (ReRAM) should be implemented in the vertical-type crossbar array configuration. The ReRAM cell must have a highly reproducible resistive switching (RS) performance and an electroforming-free, self-rectifying, low-power-consumption, multilevel-switching, and easy fabrication process with a deep sub-μm(2) cell area. In this work, a Pt/Ta2O5/HfO2-x/TiN RS memory cell fabricated in the form of a vertical-type structure was presented as a feasible contender to meet the above requirements. While the fundamental RS characteristics of this material based on the electron trapping/detrapping mechanisms have been reported elsewhere, the influence of the cell scaling size to 0.34 μm(2) on the RS performance by adopting the vertical integration scheme was carefully examined in this work. The smaller cell area provided much better switching uniformity while all the other benefits of this specific material system were preserved. Using the overstressing technique, the nature of RS through the localized conducting path was further examined, which elucidated the fundamental difference between the present material system and the general ionic-motion-related bipolar RS mechanism.

First-principles simulations of the leakage current in metal-oxide-semiconductor structures caused by oxygen vacancies in HfO2 high-K gate dielectric

International Nuclear Information System (INIS)

Mao, L.F.; Wang, Z.O.

2008-01-01

HfO 2 high-K gate dielectric has been used as a new gate dielectric in metal-oxide-semiconductor structures. First-principles simulations are used to study the effects of oxygen vacancies on the tunneling current through the oxide. A level which is nearly 1.25 eV from the bottom of the conduction band is introduced into the bandgap due to the oxygen vacancies. The tunneling current calculations show that the tunneling currents through the gate oxide with different defect density possess the typical characteristic of stress-induced leakage current. Further analysis shows that the location of oxygen vacancies will have a marked effect on the tunneling current. The largest increase in the tunneling current caused by oxygen vacancies comes about at the middle oxide field when defects are located at the middle of the oxide. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

A companion matrix for 2-D polynomials

International Nuclear Information System (INIS)

Boudellioua, M.S.

1995-08-01

In this paper, a matrix form analogous to the companion matrix which is often encountered in the theory of one dimensional (1-D) linear systems is suggested for a class of polynomials in two indeterminates and real coefficients, here referred to as two dimensional (2-D) polynomials. These polynomials arise in the context of 2-D linear systems theory. Necessary and sufficient conditions are also presented under which a matrix is equivalent to this companion form. (author). 6 refs

Electrical memory features of ferromagnetic CoFeAlSi nano-particles embedded in metal-oxide-semiconductor matrix

International Nuclear Information System (INIS)

Lee, Ja Bin; Kim, Ki Woong; Lee, Jun Seok; An, Gwang Guk; Hong, Jin Pyo

2011-01-01

Half-metallic Heusler material Co 2 FeAl 0.5 Si 0.5 (CFAS) nano-particles (NPs) embedded in metal-oxide-semiconductor (MOS) structures with thin HfO 2 tunneling and MgO control oxides were investigated. The CFAS NPs were prepared by rapid thermal annealing. The formation of well-controlled CFAS NPs on thin HfO 2 tunneling oxide was confirmed by atomic force microscopy (AFM). Memory characteristics of CFAS NPs in MOS devices exhibited a large memory window of 4.65 V, as well as good retention and endurance times of 10 5 cycles and 10 9 s, respectively, demonstrating the potential of CFAS NPs as promising candidates for use in charge storage.

Crack Driving Forces in a Multilayered Coating System for Ceramic Matrix Composite Substrates

Science.gov (United States)

Ghosn, Louis J.; Zhu, Dongming; Miller, Robert A.

2005-01-01

The effects of the top coating thickness, modulus and shrinkage strains on the crack driving forces for a baseline multilayer Yttria-Stabilized-Zirconia/Mullite/Si thermal and environment barrier coating (TEBC) system for SiC/SiC ceramic matrix composite substrates are determined for gas turbine applications. The crack driving forces increase with increasing modulus, and a low modulus thermal barrier coating material (below 10 GPa) will have no cracking issues under the thermal gradient condition analyzed. Since top coating sintering increases the crack driving forces with time, highly sintering resistant coatings are desirable to maintain a low tensile modulus and maintain a low crack driving force with time. Finite element results demonstrated that an advanced TEBC system, such as ZrO2/HfO2, which possesses improved sintering resistance and high temperature stability, exhibited excellent durability. A multi-vertical cracked structure with fine columnar spacing is an ideal strain tolerant coating capable of reducing the crack driving forces to an acceptable level even with a high modulus of 50 GPa.

Synthesis and characterization of hafnium oxide for luminescent applications

International Nuclear Information System (INIS)

Guzman Mendoza, J.; Aguilar Frutis, M.A.; Flores, G. Alarcon; Garcia Hipolito, M.; Azorin Nieto, J.; Rivera Montalvo, T.; Falcony, C.

2008-01-01

Full text: Hafnium oxide (HfO 2 ) is a material with a wide range of possible technological applications because it's chemical and physical properties such as high melting point, high chemical stability, high refraction index, high dielectric constant and hardness near to diamond in the tetragonal phase. The large energy gap and low phonon frequencies of the HfO 2 makes it appropriate as a host matrix for been doped with rare earth activators. Efficient luminescent materials find wide application in electroluminescent flat panel displays; color plasma displays panels, scintillators, cathode ray tubes, fluorescent lamps, lasers, etc. In recent years the study of luminescent materials based on HfO 2 has been intensified. Some groups have studied the optical properties of doped and undoped HfO 2 . In this contribution, Hafnium Oxide (HfO 2 ) films were prepared using the spray pyrolysis deposition technique. The material was synthesized using chlorides as raw materials in deionised water as solvent and deposited on Corning glass substrates at temperatures from 300 deg C to 600 deg C. For substrate temperatures lower than 400 deg C, the deposited films are amorphous, while for substrate temperatures higher than 450 deg C, the monoclinic phase of HfO 2 appears. Scanning electron microscopy with microprobe analysis was use to observe the microstructure and obtain the chemical composition of the films; rough surfaces with spherical particles were appreciated. UV and low energy X Ray radiations were used in order to achieve the thermoluminescent characterization of the films as a function of the deposition temperature

Application of diffusion barriers to high modulus fibers

Science.gov (United States)

Veltri, R. D.; Douglas, F. C.; Paradis, E. L.; Galasso, F. S.

1977-01-01

Barrier layers were coated onto high-modulus fibers, and nickel and titanium layers were overcoated as simulated matrix materials. The objective was to coat the high-strength fibers with unreactive selected materials without degrading the fibers. The fibers were tungsten, niobium, and single-crystal sapphire, while the materials used as barrier coating layers were Al2O3, Y2O3, TiC, ZrC, WC with 14% Co, and HfO2. An ion-plating technique was used to coat the fibers. The fibers were subjected to high-temperature heat treatments to evaluate the effectiveness of the barrier layer in preventing fiber-metal interactions. Results indicate that Al2O3, Y2O3, and HfO2 can be used as barrier layers to minimize the nickel-tungsten interaction. Further investigation, including thermal cycling tests at 1090 C, revealed that HfO2 is probably the best of the three.

Correlation between plasma angiopoietin-1, angiopoietin-2 and matrix metalloproteinase-2 in coronary heart disease.

Science.gov (United States)

Wu, Haoyu; Shou, Xiling; Liang, Lei; Wang, Congxia; Yao, Xiaowei; Cheng, Gong

2016-12-01

Angiopoietin-2 (Ang-2) plays a critical role in inducing tumor cell infiltration, and this invasive phenotype is caused by up-regulation of matrix metalloproteinase (MMP)-2. The relationship between Ang-2 and MMP-2 in atherosclerosis has not been reported yet. The aim is to measure the plasma concentrations of Ang-1, Ang-2 and MMP-2 and assess the correlation between the concentrations of these factors in coronary heart disease (CHD) patients. The testing was done in a cross-sectional study. We prospectively enrolled 42 individuals with acute myocardial infarction, 42 individuals with unstable angina pectoris, 42 individuals with stable angina pectoris and 45 healthy control subjects. Concentrations of Ang-1, Ang-2 and MMP-2 were measured using the enzyme-linked immunosorbent assay (ELISA) method. Spearman's rank correlation was calculated to evaluate the relationships between MMP-2 and Ang-1, and MMP-2 and Ang-2 in patients with CHD. Patients with acute myocardial infarction and unstable angina pectoris had higher Ang-2 and MMP-2 levels compared with stable angina patients and healthy control subjects ( p correlation showed that Ang-2 levels positively correlated with MMP-2 in patients with CHD ( r = 0.679, p correlated weakly with MMP-2, whereas the Ang-2 and MMP-2 correlation was strong in patients with CHD. Ang-2 may play a role in atherosclerosis, and have an interaction with MMP-2.

Diagonal K-matrices and transfer matrix eigenspectra associated with the G(1)2 R-matrix

International Nuclear Information System (INIS)

Yung, C.M.; Batchelor, M.T.

1995-01-01

We find all the diagonal K-matrices for the R-matrix associated with the minimal representation of the exceptional affine algebra G (1) 2 . The corresponding transfer matrices are diagonalized with a variation of the analytic Bethe ansatz. We find many similarities with the case of the Izergin-Korepin R-matrix associated with the affine algebra A (2) 2 . ((orig.))

Comparison of precursors for pulsed metal-organic chemical vapor deposition of HfO2 high-K dielectric thin films

International Nuclear Information System (INIS)

Teren, Andrew R.; Thomas, Reji; He, Jiaqing; Ehrhart, Peter

2005-01-01

Hafnium oxide films were deposited on Si(100) substrates using pulsed metal-organic chemical vapor deposition (CVD) and evaluated for high-K dielectric applications. Three types of precursors were tested: two oxygenated ones, Hf butoxide-dmae and Hf butoxide-mmp, and an oxygen-free one, Hf diethyl-amide. Depositions were carried out in the temperature range of 350-650 deg. C, yielding different microstructures ranging from amorphous to crystalline, monoclinic, films. The films were compared on the basis of growth rate, phase development, density, interface characteristics, and electrical properties. Some specific features of the pulsed injection technique are considered. For low deposition temperatures the growth rate for the amide precursor was significantly higher than for the mixed butoxide precursors. A thickness-dependent amorphous to crystalline phase transition temperature was found for all precursors. There is an increase of the film density along with the deposition temperature from values as low as 5 g/cm 3 at 350 deg. C to values close to the bulk value of 9.7 g/cm 3 at 550 deg. C. Crystallization is observed in the same temperature range for films of typically 10-20 nm thickness. However, annealing studies show that this density increase is not simply related to the crystallization of the films. Similar electrical properties could be observed for all precursors and the dielectric constant of the films reaches values similar to the best values reported for bulk crystalline HfO 2

Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO2/Al2O3 Stacks for Use in Charge Trapping Flash Memories

Directory of Open Access Journals (Sweden)

Nenad Novkovski

2018-01-01

Full Text Available Method for characterization of electrical and trapping properties of multilayered high permittivity stacks for use in charge trapping flash memories is proposed. Application of the method to the case of multilayered HfO2/Al2O3 stacks is presented. By applying our previously developed comprehensive model for MOS structures containing high-κ dielectrics on the J-V characteristics measured in the voltage range without marked degradation and charge trapping (from −3 V to +3 V, several parameters of the structure connected to the interfacial layer and the conduction mechanisms have been extracted. We found that the above analysis gives precise information on the main characteristics and the quality of the injection layer. C-V characteristics of stressed (with write and erase pulses structures recorded in a limited range of voltages between −1 V and +1 V (where neither significant charge trapping nor visible degradation of the structures is expected to occur were used in order to provide measures of the effect of stresses with no influence of the measurement process. Both trapped charge and the distribution of interface states have been determined using modified Terman method for fresh structures and for structures stressed with write and erase cycles. The proposed method allows determination of charge trapping and interface state with high resolution, promising a precise characterization of multilayered high permittivity stacks for use in charge trapping flash memories.

Omentin-1 prevents cartilage matrix destruction by regulating matrix metalloproteinases.

Science.gov (United States)

Li, Zhigang; Liu, Baoyi; Zhao, Dewei; Wang, BenJie; Liu, Yupeng; Zhang, Yao; Li, Borui; Tian, Fengde

2017-08-01

Matrix metalloproteinases (MMPs) play a crucial role in the degradation of the extracellular matrix and pathological progression of osteoarthritis (OA). Omentin-1 is a newly identified anti-inflammatory adipokine. Little information regarding the protective effects of omentin-1 in OA has been reported before. In the current study, our results indicated that omentin-1 suppressed expression of MMP-1, MMP-3, and MMP-13 induced by the proinflammatory cytokine interleukin-1β (IL-1β) at both the mRNA and protein levels in human chondrocytes. Importantly, administration of omentin-1 abolished IL-1β-induced degradation of type II collagen (Col II) and aggrecan, the two major extracellular matrix components in articular cartilage, in a dose-dependent manner. Mechanistically, omentin-1 ameliorated the expression of interferon regulatory factor 1 (IRF-1) by blocking the JAK-2/STAT3 pathway. Our results indicate that omentin-1 may have a potential chondroprotective therapeutic capacity. Copyright © 2017 Elsevier Masson SAS. All rights reserved.

2-variable Laguerre matrix polynomials and Lie-algebraic techniques

International Nuclear Information System (INIS)

Khan, Subuhi; Hassan, Nader Ali Makboul

2010-01-01

The authors introduce 2-variable forms of Laguerre and modified Laguerre matrix polynomials and derive their special properties. Further, the representations of the special linear Lie algebra sl(2) and the harmonic oscillator Lie algebra G(0,1) are used to derive certain results involving these polynomials. Furthermore, the generating relations for the ordinary as well as matrix polynomials related to these matrix polynomials are derived as applications.

Matrix metalloproteinase 2 and 9 activity in patients with colorectal cancer liver metastasis.

NARCIS (Netherlands)

Waas, E.T.; Wobbes, Th.; Lomme, R.M.L.M.; Groot, J.H. de; Ruers, T.J.M.; Hendriks, T.

2003-01-01

BACKGROUND: Matrix metalloproteinases (MMPs) have been reported to play an important role in tumour cell invasion and metastasis. The bioactivity of MMPs in liver metastasis from colorectal cancer was investigated and correlated with clinicopathological variables. METHOD: Thirty-two patients

GOLGA2/GM130, cis-Golgi Matrix Protein, is a Novel Target of Anticancer Gene Therapy

OpenAIRE

Chang, Seung-Hee; Hong, Seong-Ho; Jiang, Hu-Lin; Minai-Tehrani, Arash; Yu, Kyeong-Nam; Lee, Jae-Ho; Kim, Ji-Eun; Shin, Ji-Young; Kang, Bitna; Park, Sungjin; Han, Kiwon; Chae, Chanhee; Cho, Myung-Haing

2012-01-01

Achievement of long-term survival of patients with lung cancer treated with conventional chemotherapy is still difficult for treatment of metastatic and advanced tumors. Despite recent progress in investigational therapies, survival rates are still disappointingly low and novel adjuvant and systemic therapies are urgently needed. A recently elucidated secretory pathway is attracting considerable interest as a promising anticancer target. The cis-Golgi matrix protein, GOLGA2/GM130, plays an im...

Wet thermal annealing effect on TaN/HfO2/Ge metal—oxide—semiconductor capacitors with and without a GeO2 passivation layer

International Nuclear Information System (INIS)

Liu Guan-Zhou; Li Cheng; Lu Chang-Bao; Tang Rui-Fan; Tang Meng-Rao; Wu Zheng; Yang Xu; Huang Wei; Lai Hong-Kai; Chen Song-Yan

2012-01-01

Wet thermal annealing effects on the properties of TaN/HfO 2 /Ge metal—oxide—semiconductor (MOS) structures with and without a GeO 2 passivation layer are investigated. The physical and the electrical properties are characterized by X-ray photoemission spectroscopy, high-resolution transmission electron microscopy, capacitance—voltage (C—V) and current—voltage characteristics. It is demonstrated that wet thermal annealing at relatively higher temperature such as 550 °C can lead to Ge incorporation in HfO 2 and the partial crystallization of HfO 2 , which should be responsible for the serious degradation of the electrical characteristics of the TaN/HfO 2 /Ge MOS capacitors. However, wet thermal annealing at 400 °C can decrease the GeO x interlayer thickness at the HfO 2 /Ge interface, resulting in a significant reduction of the interface states and a smaller effective oxide thickness, along with the introduction of a positive charge in the dielectrics due to the hydrolyzable property of GeO x in the wet ambient. The pre-growth of a thin GeO 2 passivation layer can effectively suppress the interface states and improve the C—V characteristics for the as-prepared HfO 2 gated Ge MOS capacitors, but it also dissembles the benefits of wet thermal annealing to a certain extent

Modeling CO2 Storage in Fractured Reservoirs: Fracture-Matrix Interactions of Free-Phase and Dissolved CO2

Science.gov (United States)

Oldenburg, C. M.; Zhou, Q.; Birkholzer, J. T.

2017-12-01

The injection of supercritical CO2 (scCO2) in fractured reservoirs has been conducted at several storage sites. However, no site-specific dual-continuum modeling for fractured reservoirs has been reported and modeling studies have generally underestimated the fracture-matrix interactions. We developed a conceptual model for enhanced CO2 storage to take into account global scCO2 migration in the fracture continuum, local storage of scCO2 and dissolved CO2 (dsCO2) in the matrix continuum, and driving forces for scCO2 invasion and dsCO2 diffusion from fractures. High-resolution discrete fracture-matrix models were developed for a column of idealized matrix blocks bounded by vertical and horizontal fractures and for a km-scale fractured reservoir. The column-scale simulation results show that equilibrium storage efficiency strongly depends on matrix entry capillary pressure and matrix-matrix connectivity while the time scale to reach equilibrium is sensitive to fracture spacing and matrix flow properties. The reservoir-scale modeling results shows that the preferential migration of scCO2 through fractures is coupled with bulk storage in the rock matrix that in turn retards the fracture scCO2 plume. We also developed unified-form diffusive flux equations to account for dsCO2 storage in brine-filled matrix blocks and found solubility trapping is significant in fractured reservoirs with low-permeability matrix.

Improvement on the electrical characteristics of Pd/HfO2/6H-SiC MIS capacitors using post deposition annealing and post metallization annealing

Science.gov (United States)

Esakky, Papanasam; Kailath, Binsu J.

2017-08-01

HfO2 as a gate dielectric enables high electric field operation of SiC MIS structure and as gas sensor HfO2/SiC capacitors offer higher sensitivity than SiO2/SiC capacitors. The issue of higher density of oxygen vacancies and associated higher leakage current necessitates better passivation of HfO2/SiC interface. Effect of post deposition annealing in N2O plasma and post metallization annealing in forming gas on the structural and electrical characteristics of Pd/HfO2/SiC MIS capacitors are reported in this work. N2O plasma annealing suppresses crystallization during high temperature annealing thereby improving the thermal stability and plasma annealing followed by rapid thermal annealing in N2 result in formation of Hf silicate at the HfO2/SiC interface resulting in order of magnitude lower density of interface states and gate leakage current. Post metallization annealing in forming gas for 40 min reduces interface state density by two orders while gate leakage current density is reduced by thrice. Post deposition annealing in N2O plasma and post metallization annealing in forming gas are observed to be effective passivation techniques improving the electrical characteristics of HfO2/SiC capacitors.

Matrix comparison, Part 2

DEFF Research Database (Denmark)

Schneider, Jesper Wiborg; Borlund, Pia

2007-01-01

The present two-part article introduces matrix comparison as a formal means for evaluation purposes in informetric studies such as cocitation analysis. In the first part, the motivation behind introducing matrix comparison to informetric studies, as well as two important issues influencing such c...

Matrix metalloproteinase 2 and tissue inhibitor of matrix metalloproteinases 2 in the diagnosis of colorectal adenoma and cancer patients

Directory of Open Access Journals (Sweden)

Magdalena Groblewska

2010-04-01

Full Text Available The aim of the study was to assess the importance of the measurement of matrix metalloproteinase 2 (MMP-2and tissue inhibitor of matrix metalloproteinases 2 (TIMP-2 in patients with colorectal cancer (CRC in relation to clinicopathologicalfeatures of tumor and patients' survival. Additionally, we determined serum MMP-2 and TIMP-2 in colorectaladenoma (CA patients and healthy controls and compared them with tumor markers, CEA and CA 19-9. The serum levelsof MMP-2 and TIMP-2 in 91 CRC patients, 28 CA subjects and 91 healthy controls were determined by ELISA method, butconcentrations of CEA and CA 19-9 using MEIA method. Nonparametric statistical analyses were used. Serum levels ofMMP-2 and TIMP-2 were significantly lower in CRC patients than in healthy subjects and decreased with tumor stage.Additionally, MMP-2 concentrations were significantly lower in patients with CRC than in CA group. Diagnostic sensitivityof TIMP-2 (59% was the highest among biomarkers tested and increased in combined use with CEA (79%. Moreover,the area under ROC curve (AUC of TIMP-2 was larger than AUC of MMP-2 in differentiation between CRC and healthysubjects, but lower than AUC of matrix metalloproteinase 2 in differentiation between colorectal cancer and adenoma. Ourfindings suggest clinical usefulness of TIMP-2 as a biomarker in the diagnosis of CRC, especially in combination with CEA.However, further investigation is necessary.

Matrix metalloproteinase 2 and tissue inhibitor of matrix metalloproteinases 2 in the diagnosis of colorectal adenoma and cancer patients.

Directory of Open Access Journals (Sweden)

Barbara Mroczko

2011-04-01

Full Text Available The aim of the study was to assess the importance of the measurement of matrix metalloproteinase 2 (MMP-2 and tissue inhibitor of matrix metalloproteinases 2 (TIMP-2 in patients with colorectal cancer (CRC in relation to clinicopathological features of tumor and patients' survival. Additionally, we determined serum MMP-2 and TIMP-2 in colorectal adenoma (CA patients and healthy controls and compared them with tumor markers, CEA and CA 19-9. The serum levels of MMP-2 and TIMP-2 in 91 CRC patients, 28 CA subjects and 91 healthy controls were determined by ELISA method, but concentrations of CEA and CA 19-9 using MEIA method. Nonparametric statistical analyses were used. Serum levels of MMP-2 and TIMP-2 were significantly lower in CRC patients than in healthy subjects and decreased with tumor stage. Additionally, MMP-2 concentrations were significantly lower in patients with CRC than in CA group. Diagnostic sensitivity of TIMP-2 (59% was the highest among biomarkers tested and increased in combined use with CEA (79%. Moreover, the area under ROC curve (AUC of TIMP-2 was larger than AUC of MMP-2 in differentiation between CRC and healthy subjects, but lower than AUC of matrix metalloproteinase 2 in differentiation between colorectal cancer and adenoma. Our findings suggest clinical usefulness of TIMP-2 as a biomarker in the diagnosis of CRC, especially in combination with CEA. However, further investigation is necessary.

2 × 2 random matrix ensembles with reduced symmetry: from Hermitian to PT -symmetric matrices

International Nuclear Information System (INIS)

Gong Jiangbin; Wang Qinghai

2012-01-01

A possibly fruitful extension of conventional random matrix ensembles is proposed by imposing symmetry constraints on conventional Hermitian matrices or parity–time (PT)-symmetric matrices. To illustrate the main idea, we first study 2 × 2 complex Hermitian matrix ensembles with O(2)-invariant constraints, yielding novel level-spacing statistics such as singular distributions, the half-Gaussian distribution, distributions interpolating between the GOE (Gaussian orthogonal ensemble) distribution and half-Gaussian distributions, as well as the gapped-GOE distribution. Such a symmetry-reduction strategy is then used to explore 2 × 2 PT-symmetric matrix ensembles with real eigenvalues. In particular, PT-symmetric random matrix ensembles with U(2) invariance can be constructed, with the conventional complex Hermitian random matrix ensemble being a special case. In two examples of PT-symmetric random matrix ensembles, the level-spacing distributions are found to be the standard GUE (Gaussian unitary ensemble) statistics or the ‘truncated-GUE’ statistics. This article is part of a special issue of Journal of Physics A: Mathematical and Theoretical devoted to ‘Quantum physics with non-Hermitian operators’. (paper)

Comparison of HfCl4, HfI4, TEMA-Hf, and TDMA-Hf as precursors in early growing stages of HfO2 films deposited by ALD: A DFT study

Science.gov (United States)

Cortez-Valadez, M.; Fierro, C.; Farias-Mancilla, J. R.; Vargas-Ortiz, A.; Flores-Acosta, M.; Ramírez-Bon, R.; Enriquez-Carrejo, J. L.; Soubervielle-Montalvo, C.; Mani-Gonzalez, P. G.

2016-06-01

The final structure of HfO2 films grown by atomic layer deposition (ALD) after reaction with OH- ions has been analyzed by DFT (density functional theory). The interaction of the precursors: HfCl4 (hafnium tetrachloride), HfI4 (hafnium tetraiodide), TEMA-Hf (tetrakis-ethylmethylamino hafnium), and TDMA-Hf (tetrakis-dimethylamino hafnium) with HO-H was studied employing the B3LYP (Becke 3-parameter, Lee-Yang-Parr) hybrid functional and the PBE (Perdew-Burke-Ernzerhof) generalized gradient functional. The structural evolution at the Si(100) surface has been analyzed by LDA (local density approximation). The structural parameters: bond length and bond angle, and the vibrational parameters for the optimized structures are also reported. The presence of hafnium silicate at the interface was detected. The infrared spectra and structural parameters obtained in this work agree with previously reported experimental results.

High reflectivity YDH/SiO2 distributed Bragg reflector for UV-C wavelength regime

KAUST Repository

Alias, Mohd Sharizal

2018-02-15

A distributed Bragg reflector (DBR) composed of Y2O3-doped HfO2 (YDH)/SiO2 layers with high reflectivity spectrum centered at a wavelength of ~240 nm is deposited using radio-frequency magnetron sputtering. Before the DBR deposition, optical properties for a single layer of YDH, SiO2, and HfO2 thin films were studied using spectroscopic ellipsometry and spectrophotometry. To investigate the performance of YDH as a material for the high refractive index layer in the DBR, a comparison of its optical properties was made with HfO2 thin films. Due to larger optical bandgap, the YDH thin films demonstrated higher transparency, lower extinction coefficient, and lower absorption coefficient in the UV-C regime (especially for wavelengths below 250 nm) compared to the HfO2 thin films. The deposited YDH/SiO2 DBR consisting of 15 periods achieved a reflectivity higher than 99.9% at the wavelength of ~240 nm with a stopband of ~50 nm. The high reflectivity and broad stopband of YDH/SiO2 DBRs will enable further advancement of various photonic devices such as vertical-cavity surface-emitting lasers, resonant-cavity light-emitting diodes, and resonant-cavity photodetectors operating in the UV-C wavelength regime.

Thermal response of Ru electrodes in contact with SiO2 and Hf-based high-k gate dielectrics

International Nuclear Information System (INIS)

Wen, H.-C.; Lysaght, P.; Alshareef, H.N.; Huffman, C.; Harris, H.R.; Choi, K.; Senzaki, Y.; Luan, H.; Majhi, P.; Lee, B.H.; Campin, M. J.; Foran, B.; Lian, G.D.; Kwong, D.-L.

2005-01-01

A systematic experimental evaluation of the thermal stability of Ru metal gate electrodes in direct contact with SiO 2 and Hf-based dielectric layers was performed and correlated with electrical device measurements. The distinctly different interfacial reactions in the Ru/SiO 2 , Ru/HfO 2 , and Ru/HfSiO x film systems were observed through cross-sectional high-resolution transmission electron microscopy, high angle annular dark field scanning transmission electron microscopy with electron-energy-loss spectra, and energy dispersive x-ray spectra analysis. Ru interacted with SiO 2 , but remained stable on HfO 2 at 1000 deg. C. The onset of Ru/SiO 2 interfacial interactions is identified via silicon substrate pitting possibly from Ru diffusion into the dielectric in samples exposed to a 900 deg. C/10-s anneal. The dependence of capacitor device degradation with decreasing SiO 2 thickness suggests Ru diffuses through SiO 2 , followed by an abrupt, rapid, nonuniform interaction of ruthenium silicide as Ru contacts the Si substrate. Local interdiffusion detected on Ru/HfSiO x samples may be due to phase separation of HfSiO x into HfO 2 grains within a SiO 2 matrix, suggesting that SiO 2 provides a diffusion pathway for Ru. Detailed evidence consistent with a dual reaction mechanism for the Ru/SiO 2 system at 1000 deg. C is presented

N=2 3d-matrix integral with Myers term

International Nuclear Information System (INIS)

Tomino, Dan

2004-01-01

An exact matrix integral is evaluated for a 2x2 3-dimensional matrix model with Myers term. We derive weak and strong coupling expansions of the effective action. We also calculate the expectation values of the quadratic and cubic operators. Implications for non-commutative gauge theory on fuzzy sphere are discussed. (author)

Integrin-linked kinase is involved in matrix-induced hepatocyte differentiation

International Nuclear Information System (INIS)

Gkretsi, Vasiliki; Bowen, William C.; Yang, Yu; Wu, Chuanyue; Michalopoulos, George K.

2007-01-01

Hepatocytes have restricted proliferative capacity in culture and when cultured without matrix, lose the hepatocyte-specific gene expression and characteristic cellular micro-architecture. Overlay of matrix-preparations on de-differentiated hepatocytes restores differentiation. Integrin-linked kinase (ILK) is a cell-matrix-adhesion protein crucial in fundamental processes such as differentiation and survival. In this study, we investigated the role of ILK, and its binding partners PINCH, α-parvin, and Mig-2 in matrix-induced hepatocyte differentiation. We report here that ILK is present in the liver and localizes at cell-matrix adhesions of cultured hepatocytes. We also show that ILK, PINCH, α-parvin, and Mig-2 expression level is dramatically reduced in the re-differentiated hepatocytes. Interestingly, hepatocytes lacking ILK undergo matrix-induced differentiation but their differentiation is incomplete, as judged by monitoring cell morphology and production of albumin. Our results show that ILK and cell-matrix adhesion proteins play an important role in the process of matrix-induced hepatocyte differentiation

1/2-BPS correlators as c = 1 S-matrix

International Nuclear Information System (INIS)

Jevicki, Antal; Yoneya, Tamiaki

2007-01-01

We argue from two complementary viewpoints of Holography that the 2-point correlation functions of 1/2-BPS multi-trace operators in the large-N (planar) limit are nothing but the (Wick-rotated) S-matrix elements of c = 1 matrix model. On the bulk side, we consider an Euclideanized version of the so-called bubbling geometries and show that the corresponding droplets reach the conformal boundary. Then the scattering matrix of fluctuations of the droplets gives directly the two-point correlators through the GKPW prescription. On the Yang-Mills side, we show that the two-point correlators of holomorphic and anti-holomorphic operators are essentially equivalent with the transformation functions between asymptotic in- and out-states of c = 1 matrix model. Extension to non-planar case is also discussed

Comparison of electron transmittances and tunneling currents in an anisotropic TiNx/HfO2/SiO2/p-Si(100) metal-oxide-semiconductor (MOS) capacitor calculated using exponential- and Airy-wavefunction approaches and a transfer matrix method

International Nuclear Information System (INIS)

Noor, Fatimah A.; Abdullah, Mikrajuddin; Sukirno; Khairurrijal

2010-01-01

Analytical expressions of electron transmittance and tunneling current in an anisotropic TiN x /HfO 2 /SiO 2 /p-Si(100) metal-oxide-semiconductor (MOS) capacitor were derived by considering the coupling of transverse and longitudinal energies of an electron. Exponential and Airy wavefunctions were utilized to obtain the electron transmittance and the electron tunneling current. A transfer matrix method, as a numerical approach, was used as a benchmark to assess the analytical approaches. It was found that there is a similarity in the transmittances calculated among exponential- and Airy-wavefunction approaches and the TMM at low electron energies. However, for high energies, only the transmittance calculated by using the Airy-wavefunction approach is the same as that evaluated by the TMM. It was also found that only the tunneling currents calculated by using the Airy-wavefunction approach are the same as those obtained under the TMM for all range of oxide voltages. Therefore, a better analytical description for the tunneling phenomenon in the MOS capacitor is given by the Airy-wavefunction approach. Moreover, the tunneling current density decreases as the titanium concentration of the TiN x metal gate increases because the electron effective mass of TiN x decreases with increasing nitrogen concentration. In addition, the mass anisotropy cannot be neglected because the tunneling currents obtained under the isotropic and anisotropic masses are very different. (semiconductor devices)

Matrix models of 2d gravity

International Nuclear Information System (INIS)

Ginsparg, P.

1991-01-01

These are introductory lectures for a general audience that give an overview of the subject of matrix models and their application to random surfaces, 2d gravity, and string theory. They are intentionally 1.5 years out of date

Fabrication of Nano-CeO2 and Application of Nano-CeO2 in Fe Matrix Composites

International Nuclear Information System (INIS)

Tiebao, W.; Chunxiang, C.; Xiaodong, W.; Guobin, L.

2010-01-01

It is expatiated that nano-CeO2 is fabricated by the direct sedimentation method. The components and particles diameter of nano-CeO2 powders are analyzed by XRD and SEM . The thermodynamic analysis and acting mechanism of nano-CeO2 with Al in Fe matrix composites are researched, which shows that the reaction is generated between CeO2 and Al in the composite, that is, 3CeO2+4Al - 2Al2O3+3[Ce], which obtains Al2O3 and active [Ce] during the sintering process. The active [Ce] can improve the performance of CeO2/Fe matrix composites. The suitable amount of CeO2 is about 0.05% in CeO2/Fe matrix composites. SEM fracture analysis shows that the toughness sockets in nano-CeO2/Fe matrix composites are more than those in no-added nano-CeO2 composites, which can explain that adding nano-CeO2 into Fe matrix composite, the toughness of the composite is improved significantly. Applied nano-CeO2 to Fe matrix diamond saw blades shows that Fe matrix diamond saw blade is sharper and of longer cutting life than that with no-added nano-CeO2.

The exact S -matrix for an osp(2 vertical bar 2) disordered system

International Nuclear Information System (INIS)

Bassi, Zorawar S.; LeClair, Andre

2000-01-01

We study a two-dimensional disordered system consisting of Dirac fermions coupled to a scalar potential. This model is closely related to a more general disordered system that has been introduced in conjunction with the integer quantum Hall transition. After disorder averaging, the interaction can be written as a marginal osp(2 vertical bar 2) current-current perturbation. The osp(2 vertical bar 2) current-current model in turn can be viewed as the fully renormalized version of an osp(2 vertical bar 2) (1) Toda-type system (at the marginal point). We build nonlocal charges for the Toda system satisfying the U q [osp(2 vertical bar 2) (1) ] quantum superalgebra. The corresponding quantum group symmetry is used to construct a Toda S -matrix for the vector representation. We argue that in the marginal (or rational) limit, this S -matrix gives the exact (Yangian symmetric) physical S -matrix for the fundamental 'solitons' of the osp(2 vertical bar 2) current-current model

The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces

International Nuclear Information System (INIS)

Kent, Tyler; Edmonds, Mary; Kummel, Andrew C.; Tang, Kechao; Negara, Muhammad Adi; McIntyre, Paul; Chobpattana, Varistha; Mitchell, William; Sahu, Bhagawan; Galatage, Rohit; Droopad, Ravi

2015-01-01

Current logic devices rely on 3D architectures, such as the tri-gate field effect transistor (finFET), which utilize the (001) and (110) crystal faces simultaneously thus requiring passivation methods for the (110) face in order to ensure a pristine 3D surface prior to further processing. Scanning tunneling microscopy (STM), x-ray photoelectron spectroscopy (XPS), and correlated electrical measurement on MOSCAPs were utilized to compare the effects of a previously developed in situ pre-atomic layer deposition (ALD) surface clean on the InGaAs (001) and (110) surfaces. Ex situ wet cleans are very effective on the (001) surface but not the (110) surface. Capacitance voltage indicated the (001) surface with no buffered oxide etch had a higher C max hypothesized to be a result of poor nucleation of HfO 2 on the native oxide. An in situ pre-ALD surface clean employing both atomic H and trimethylaluminum (TMA) pre-pulsing, developed by Chobpattana et al. and Carter et al. for the (001) surface, was demonstrated to be effective on the (110) surface for producing low D it high C ox MOSCAPs. Including TMA in the pre-ALD surface clean resulted in reduction of the magnitude of the interface state capacitance. The XPS studies show the role of atomic H pre-pulsing is to remove both carbon and oxygen while STM shows the role of TMA pre-pulsing is to eliminate H induced etching. Devices fabricated at 120 °C and 300 °C were compared

Symmetries of the 2D magnetic particle imaging system matrix

International Nuclear Information System (INIS)

Weber, A; Knopp, T

2015-01-01

In magnetic particle imaging (MPI), the relation between the particle distribution and the measurement signal can be described by a linear system of equations. For 1D imaging, it can be shown that the system matrix can be expressed as a product of a convolution matrix and a Chebyshev transformation matrix. For multidimensional imaging, the structure of the MPI system matrix is not yet fully explored as the sampling trajectory complicates the physical model. It has been experimentally found that the MPI system matrix rows have symmetries and look similar to the tensor products of Chebyshev polynomials. In this work we will mathematically prove that the 2D MPI system matrix has symmetries that can be used for matrix compression. (paper)

Feedback amplification of fibrosis through matrix stiffening and COX-2 suppression

Science.gov (United States)

Liu, Fei; Mih, Justin D.; Shea, Barry S.; Kho, Alvin T.; Sharif, Asma S.; Tager, Andrew M.

2010-01-01

Tissue stiffening is a hallmark of fibrotic disorders but has traditionally been regarded as an outcome of fibrosis, not a contributing factor to pathogenesis. In this study, we show that fibrosis induced by bleomycin injury in the murine lung locally increases median tissue stiffness sixfold relative to normal lung parenchyma. Across this pathophysiological stiffness range, cultured lung fibroblasts transition from a surprisingly quiescent state to progressive increases in proliferation and matrix synthesis, accompanied by coordinated decreases in matrix proteolytic gene expression. Increasing matrix stiffness strongly suppresses fibroblast expression of COX-2 (cyclooxygenase-2) and synthesis of prostaglandin E2 (PGE2), an autocrine inhibitor of fibrogenesis. Exogenous PGE2 or an agonist of the prostanoid EP2 receptor completely counteracts the proliferative and matrix synthetic effects caused by increased stiffness. Together, these results demonstrate a dominant role for normal tissue compliance, acting in part through autocrine PGE2, in maintaining fibroblast quiescence and reveal a feedback relationship between matrix stiffening, COX-2 suppression, and fibroblast activation that promotes and amplifies progressive fibrosis. PMID:20733059

Expressions of matrix metalloproteinase-2 and extracellular matrix metalloproteinase inducer in retinoblastoma

Directory of Open Access Journals (Sweden)

Yu-Hong Cheng

2015-07-01

Full Text Available AIM: To investigate expressions of matrix metalloproteinase-2(MMP-2and extracellular matrix metalloproteinase inducer(EMMPRINin retinoblastoma(Rband the relationships between MMP-2, EMMPRIN and tumor development.METHODS:Immunohistochemical technique was used to detect expressions of MMP-2 and EMMPRIN in 39 cases of paraffin embedded Rb samples. Quantitative analysis of expressions of MMP-2 and EMMPRIN were assessed by measuring the mean gray scale of Rb tissue with LEICA IM50 Color Pathologic Analysis System. The differences of expressions of MMP-2 and EMMPRIN in each clinical and pathological stage were statistically analyzed, and the same step was also undertaken to study the relationship between Rb with MMP-2 positive expression and that with EMMPRIN positive expression.RESULTS: The positive expression rate of MMP-2 was 90%(Gray value: 109.64±14.52; 35/39, and that of EMMPRIN was 85%(Gray value: 108.01±13.60; 33/39. The expressions of MMP-2 and EMMPRIN were significantly higher in tumors of glaucomatous stage(Gray value: 108.21±11.47 and 107.56±14.32than those in intraocular stage(Gray value: 121.13±11.32 and 119.34±12.66; PPPPPPCONCLUSION: The positive expression levels of MMP-2 and EMMPRIN may correlate with tumor infiltration and metastasis.

q-Virasoro constraints in matrix models

Energy Technology Data Exchange (ETDEWEB)

Nedelin, Anton [Dipartimento di Fisica, Università di Milano-Bicocca and INFN, sezione di Milano-Bicocca, Piazza della Scienza 3, I-20126 Milano (Italy); Department of Physics and Astronomy, Uppsala university,Box 516, SE-75120 Uppsala (Sweden); Zabzine, Maxim [Department of Physics and Astronomy, Uppsala university,Box 516, SE-75120 Uppsala (Sweden)

2017-03-20

The Virasoro constraints play the important role in the study of matrix models and in understanding of the relation between matrix models and CFTs. Recently the localization calculations in supersymmetric gauge theories produced new families of matrix models and we have very limited knowledge about these matrix models. We concentrate on elliptic generalization of hermitian matrix model which corresponds to calculation of partition function on S{sup 3}×S{sup 1} for vector multiplet. We derive the q-Virasoro constraints for this matrix model. We also observe some interesting algebraic properties of the q-Virasoro algebra.

On Best Approximations of Polynomials in Matrices in the Matrix 2-Norm

Czech Academy of Sciences Publication Activity Database

Liesen, J.; Tichý, Petr

2009-01-01

Roč. 31, č. 2 (2009), s. 853-863 ISSN 0895-4798 R&D Projects: GA AV ČR IAA100300802 Institutional research plan: CEZ:AV0Z10300504 Keywords : matrix approximation problems * polynomials in matrices * matrix functions * matrix 2-norm * GMRES * Arnoldi's method Subject RIV: BA - General Mathematics Impact factor: 2.411, year: 2009

Matrix metalloproteinases in the brain and blood–brain barrier: Versatile breakers and makers

Science.gov (United States)

Rempe, Ralf G; Hartz, Anika MS

2016-01-01

Matrix metalloproteinases are versatile endopeptidases with many different functions in the body in health and disease. In the brain, matrix metalloproteinases are critical for tissue formation, neuronal network remodeling, and blood–brain barrier integrity. Many reviews have been published on matrix metalloproteinases before, most of which focus on the two best studied matrix metalloproteinases, the gelatinases MMP-2 and MMP-9, and their role in one or two diseases. In this review, we provide a broad overview of the role various matrix metalloproteinases play in brain disorders. We summarize and review current knowledge and understanding of matrix metalloproteinases in the brain and at the blood–brain barrier in neuroinflammation, multiple sclerosis, cerebral aneurysms, stroke, epilepsy, Alzheimer’s disease, Parkinson’s disease, and brain cancer. We discuss the detrimental effects matrix metalloproteinases can have in these conditions, contributing to blood–brain barrier leakage, neuroinflammation, neurotoxicity, demyelination, tumor angiogenesis, and cancer metastasis. We also discuss the beneficial role matrix metalloproteinases can play in neuroprotection and anti-inflammation. Finally, we address matrix metalloproteinases as potential therapeutic targets. Together, in this comprehensive review, we summarize current understanding and knowledge of matrix metalloproteinases in the brain and at the blood–brain barrier in brain disorders. PMID:27323783

Expression of matrix metalloproteinase-1, -2 and -3 in squamous cell carcinoma and actinic keratosis

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Tsukifuji, R; Tagawa, K; Hatamochi, A; Shinkai, H

1999-01-01

Matrix metalloproteinase (MMP) plays an important role in extracellular matrix degradation associated with cancer invasion. An expression of MMP-1 (interstitial collagenase), MMP-2 (72-kDa type IV collagenase) and MMP-3 (stromelysin-1) was investigated in squamous cell carcinoma (SCC) and its precancerous condition, actinic keratosis (AK), using in situ hybridization techniques. MMP-1 mRNA was detected in tumour cells and/or in stromal cells in all cases of SCC, four of six AKs adjacent to SCC and four of 16 AKs. MMP-2 and MMP-3 mRNAs were detected in SCC but not in AK. The expression of MMP-3 correlated to that of MMP-1 (P = 0.03) localized at the tumour mass and stroma of the invasive area, while MMP-2 mRNA was detected widely throughout the stroma independent of MMP-1 expression. Our results indicated that the expression of MMP-1, -2 and -3 showed different localization patterns, suggesting a unique role of each MMP in tumour progression. Moreover, MMP-1 expression could be an early event in the development of SCC, and AK demonstrating MMP-1 mRNA, might be in a more advanced dysplastic state, progressing to SCC. © 1999 Cancer Research Campaign PMID:10362121

The influence of interfacial defect-region on the thermoelectric properties of nanodiamond-dispersed Bi2Te2.7Se0.3 matrix composites

Science.gov (United States)

Min, Tae Sik; Kim, Kyung Tae; Son, Injoon

2017-09-01

Nanodiamond-dispersed Bi2Te2.7Se0.3 (ND/BTSe) matrix composites were fabricated by a high energy ball milling followed by spark plasma sintering process. The fabricated ND/BTSe composites show that ND powders with 5 nm in size are dispersed in the BTSe matrix grain rather than agglomerated at the grain boundary. It was found that atomically disordered-lattice structure present nearby the newly formed ND/BTSe interfaces. This interfacial region artificially formed by addition of ND powders plays a role as atomic-scaled defects increasing electron concentration. Electric conductivities of all the ND/BTSe composites show significantly increased values compared to that of pure BTSe in the temperature range from 298 K to 473 K. However, total thermal conductivity of the composites exhibit higher values than the BTSe due to superior electric conductivity even though active lattice phonon scattering at the interfaces affect lowering thermal conductivity. The maximum ZT, 0.97 was obtained from 0.5vol%ND/BTSe composite at 473 K and enhancement in ZT values was clearly revealed above 348 K. Therefore, these results elucidate that addition of ND powders into n-type BTSe matrix is promising method to improve thermoelectric performances.

Effect of atmosphere on the fabrication of Si2N2O matrix composites

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Wei Li

2018-03-01

Full Text Available Si2N2O matrix composites were fabricated by solid/gas reaction in air or N2 atmosphere. The effects of atmosphere on the phase and microstructure of the composites were investigated. The reaction mechanism of Si2N2O system was discussed by analysing the variation of the Gibbs free energy with temperature. The effect of N2 and air on sintering of Si2N2O matrix composites was discussed in relation to observed kinetics and thermodynamic calculations. The results showed that gradient structure of Si2N2O matrix composites were obtained in N2 atmosphere. While high N2 concentration was useful for the formation of the pure β-Si3N4 ceramics, low N2 concentration was proposed to form the pure Si2N2O ceramics. However, in the air atmosphere, structure of the Si3N4/SiO2 composites is homogeneous without the gradient structure appearing. Its composition is a little different as the O2 concentration changes.

Epithelial expression of extracellular matrix metalloproteinase inducer/CD147 and matrix metalloproteinase-2 in neoplasms and precursor lesions derived from cutaneous squamous cells: An immunohistochemical study.

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Ayva, Sebnem Kupana; Karabulut, Ayse Anil; Akatli, Ayşe Nur; Atasoy, Pinar; Bozdogan, Onder

2013-10-01

Extracellular matrix metalloproteinase inducer (CD147) is a transmembrane glycoprotein involved in the regulation of matrix metalloproteinases (MMPs). The study investigated CD147 and MMP-2 expression in epidermis of cutaneous squamous lesions. CD147 and MMP-2 expressions were evaluated immunohistochemically in 44 specimens: 18 actinic keratoses (AK), 6 squamous cell carcinomas in situ (SCCIS), 13 squamous cell carcinomas (SCC; peritumoral and invasive portions assessed), and 7 normal skins. Patterns of expression were assessed, with MMP-2 in nuclei (MMP-2n) and cytoplasm (MMP-2c) evaluated separately. The expression of each marker was quantified using a calculated immunohistochemical/histologic score (H-score). Correlations were analyzed for the marker H-scores in each study group. Associations between H-scores and histopathologic parameters were also evaluated. CD147 H-score was the highest in SCC (invasive islands), followed by AK, SCCIS, and control specimens, respectively. MMP-2n and MMP-2c H-scores were the highest in AK, followed by SCCIS, SCC, and control specimens, respectively. MMP-2c and MMP-2n H-scores were significantly higher in peritumoral epidermis than in invasive islands of SCC. MMP-2c and CD147 H-scores were positively correlated in the peritumoral SCCs. CD147 H-score was positively correlated with tumor differentiation in SCC. The findings suggest that overexpression of CD147 plays a role in the development of SCC. Copyright © 2013 Elsevier GmbH. All rights reserved.

Matrix metalloproteinase-1 facilitates MSC migration via cleavage of IGF-2/IGFBP2 complex.

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Guan, Shou P; Lam, Alan T L; Newman, Jennifer P; Chua, Kevin L M; Kok, Catherine Y L; Chong, Siao T; Chua, Melvin L K; Lam, Paula Y P

2018-01-01

The specific mechanism underlying the tumor tropism of human mesenchymal stem cells (MSCs) for cancer is not well defined. We previously showed that the migration potential of MSCs correlated with the expression and protease activity of matrix metalloproteinase (MMP)-1. Furthermore, highly tumor-tropic MSCs expressed higher levels of MMP-1 and insulin-like growth factor (IGF)-2 than poorly migrating MSCs. In this study, we examined the functional roles of IGF-2 and MMP-1 in mediating the tumor tropism of MSCs. Exogenous addition of either recombinant IGF-2 or MMP-1 could stimulate MSC migration. The correlation between IGF-2, MMP-1 expression, and MSC migration suggests that MMP-1 may play a role in regulating MSC migration via the IGF-2 signaling cascade. High concentrations of IGF binding proteins (IGFBPs) can inhibit IGF-stimulated functions by blocking its binding to its receptors and proteolysis of IGFBP is an important mechanism for the regulation of IGF signaling. We thus hypothesized that MMP-1 acts as an IGFBP2 proteinase, resulting in the cleavage of IGF-2/IGFBP2 complex and extracellular release of free IGF-2. Indeed, our results showed that conditioned media from highly migrating MSCs, which expressed high levels of MMP-1, cleaved the IGF-2/IGFBP2 complex. Taken together, these results showed that the MMP-1 secreted by highly tumor-tropic MSCs cleaved IGF-2/IGFBP2 complex. Free IGF-2 released from the complex may facilitate MSC migration toward tumor.

Matrix elements of a hyperbolic vector operator under SO(2,1)

International Nuclear Information System (INIS)

Zettili, N.; Boukahil, A.

2003-01-01

We deal here with the use of Wigner–Eckart type arguments to calculate the matrix elements of a hyperbolic vector operator V-vector by expressing them in terms of reduced matrix elements. In particular, we focus on calculating the matrix elements of this vector operator within the basis of the hyperbolic angular momentum T-vector whose components T-vector 1 , T-vector 2 , T-vector 3 satisfy an SO(2,1) Lie algebra. We show that the commutation rules between the components of V-vector and T-vector can be inferred from the algebra of ordinary angular momentum. We then show that, by analogy to the Wigner–Eckart theorem, we can calculate the matrix elements of V-vector within a representation where T-vector 2 and T-vector 3 are jointly diagonal. (author)

Activity of matrix metalloproteinases during antimycobacterial therapy in mice with simulated tuberculous inflammation.

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Sumenkova, D V; Russkikh, G S; Poteryaeva, O N; Polyakov, L M; Panin, L E

2013-05-01

Matrix metalloproteinases are shown to be involved in the pathogenesis of tuberculosis inflammation. In the early stages of BCG-granuloma formation in mouse liver and lungs, the serum levels of matrix metalloproteinases 2 and 7 increased by 4.5 times and remained unchanged while the pathology developed. Antimycobacterial therapy with isoniazid reduced enzyme activity almost to the level of intact control. The decrease in activity of matrix metalloproteinases 2 and 7 that play the most prominent role in the development of destructive forms of tuberculosis is of great therapeutic importance.

Impacts of the Degradation of 2,3,3,3-Tetrafluoropropene into Trifluoroacetic Acid from Its Application in Automobile Air Conditioners in China, the United States, and Europe.

Science.gov (United States)

Wang, Ziyuan; Wang, Yuhang; Li, Jianfeng; Henne, Stephan; Zhang, Boya; Hu, Jianxin; Zhang, Jianbo

2018-03-06

HFO-1234yf (2,3,3,3-tetrafluoropropene) was proposed as an automobile air conditioner (MAC) refrigerant worldwide. However, its atmospheric degradation product is the highly soluble and phytotoxic trifluoroacetic acid (TFA), which persists in aquatic environments. We used a global three-dimensional chemical transport model to assess the potential environmental effects resulting from complete future conversion of the refrigerant in all MAC to HFO-1234yf in China, the United States, and Europe. The annual mean atmospheric concentrations of HFO-1234yf were 2.62, 2.20, and 2.73 pptv, and the mean deposition rates of TFA were 0.96, 0.45, and 0.52 kg km -2 yr -1 , in three regions. The regional TFA deposition sources mainly came from emissions within the same region. The annual TFA deposition in the North Pole region was lower than the global average and mainly originated from European emissions. A potential doubling in the future HFO-1234yf emissions in China mainly affected the local TFA depositions. The TFA concentrations in rainwater were strongly affected by the regional precipitation rates. North Africa and the Middle East, regions with scant rainfall, had extremely high TFA concentrations. The rainwater concentrations of TFA during individual rain events can exceed the level considered to be safe, indicating substantial potential regional risks from future HFO-1234yf use.

In vitro induction of matrix metalloproteinase-2 and matrix metalloproteinase-9 expression in keratinocytes by boron and manganese.

Science.gov (United States)

Chebassier, Nathalie; El Houssein, Ouijja; Viegas, Isabelle; Dréno, Brigitte

2004-08-01

Matrix metalloproteinase (MMP)-2 and MMP-9 are involved in keratinocyte migration and granulation tissue remodeling during wound healing. Thermal water cures are sometimes proposed as complementary treatment for accelerating healing of wounds resulting from burns and/or surgery, but their mechanisms of action remain unknown. Some thermal waters are rich in trace elements such as boron and manganese. Interestingly, clinical studies have shown the beneficial effects of trace elements such as boron and manganese for human wound healing. To try to specify the role of trace elements in cutaneous healing, the present study investigated the effects of these trace elements on the production of MMP-2 and MMP-9 by normal human keratinocytes cultured in vitro. Immunohistochemistry and Western blot showed that intracellular MMP-9 expression in keratinocytes was induced when incubated for 6 h with boron at 10 micro g/ml or manganese at 0.2 micro g/ml. Moreover, gelatin zymography on keratinocyte supernatants showed an increase of gelatinase secretion after 24 h of incubation of keratinocytes with boron or manganese, regardless of concentration. Gelatinase secretion was not associated with keratinocyte proliferation induced by trace elements. Thus, our results suggest that boron and manganese could play a role in the clinical efficiency of thermal water on wound healing.

Dentin matrix degradation by host Matrix Metalloproteinases: inhibition and clinical perspectives towards regeneration.

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Catherine eChaussain

2013-11-01

Full Text Available Bacterial enzymes have long been considered solely accountable for the degradation of the dentin matrix during the carious process. However, the emerging literature suggests that host-derived enzymes, and in particular the matrix metalloproteinases (MMPs contained in dentin and saliva can play a major role in this process by their ability to degrade the dentin matrix from within. These findings are important since they open new therapeutic options for caries prevention and treatment. The possibility of using MMP inhibitors to interfere with dentin caries progression is discussed. Furthermore, the potential release of bioactive peptides by the enzymatic cleavage of dentin matrix proteins by MMPs during the carious process is discussed. These peptides, once identified, may constitute promising therapeutical tools for tooth and bone regeneration.

Human aqueous humor levels of transforming growth factor-β2: Association with matrix metalloproteinases/tissue inhibitors of matrix metalloproteinases

OpenAIRE

Jia, Yan; Yue, Yu; Hu, Dan-Ning; Chen, Ji-Li; Zhou, Ji-Bo

2017-01-01

The present study aims to investigate the association of transforming growth factor-β2 (TGF-β2) and matrix metalloproteinases (MMPs), MMP-2 and MMP-3, and tissue inhibitors of matrix metalloproteinases (TIMPs), TIMP-1, TIMP-2 and TIMP-3 in the aqueous humor of patients with high myopia or cataracts. The levels of TGF-β2 and MMPs/TIMPs were measured with the Luminex xMAP Technology using commercially available Milliplex xMAP kits. The association between TGF-β2 and MMPs/TIMPs levels was analyz...

Omega-3 and Omega-6 Fatty Acids Act as Inhibitors of the Matrix Metalloproteinase-2 and Matrix Metalloproteinase-9 Activity.

Science.gov (United States)

Nicolai, Eleonora; Sinibaldi, Federica; Sannino, Gianpaolo; Laganà, Giuseppina; Basoli, Francesco; Licoccia, Silvia; Cozza, Paola; Santucci, Roberto; Piro, Maria Cristina

2017-08-01

Polyunsaturated fatty acids have been reported to play a protective role in a wide range of diseases characterized by an increased metalloproteinases (MMPs) activity. The recent finding that omega-3 and omega-6 fatty acids exert an anti-inflammatory effect in periodontal diseases has stimulated the present study, designed to determine whether such properties derive from a direct inhibitory action of these compounds on the activity of MMPs. To this issue, we investigated the effect exerted by omega-3 and omega-6 fatty acids on the activity of MMP-2 and MMP-9, two enzymes that actively participate to the destruction of the organic matrix of dentin following demineralization operated by bacteria acids. Data obtained (both in vitro and on ex-vivo teeth) reveal that omega-3 and omega-6 fatty acids inhibit the proteolytic activity of MMP-2 and MMP-9, two enzymes present in dentin. This observation is of interest since it assigns to these compounds a key role as MMPs inhibitors, and stimulates further study to better define their therapeutic potentialities in carious decay.

Bee venom induces apoptosis and suppresses matrix metaloprotease-2 expression in human glioblastoma cells

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Mohsen Sisakht

Full Text Available Abstract Glioblastoma is the most common malignant brain tumor representing with poor prognosis, therapy resistance and high metastasis rate. Increased expression and activity of matrix metalloproteinase-2, a member of matrix metalloproteinase family proteins, has been reported in many cancers including glioblastoma. Inhibition of matrix metalloproteinase-2 expression has resulted in reduced aggression of glioblastoma tumors in several reports. In the present study, we evaluated effect of bee venom on expression and activity of matrix metalloproteinase-2 as well as potential toxicity and apoptogenic properties of bee venom on glioblastoma cells. Human A172 glioblastoma cells were treated with increasing concentrations of bee venom. Then, cell viability, apoptosis, matrix metalloproteinase-2 expression, and matrix metalloproteinase-2 activity were measured using MMT assay, propidium iodide staining, real time-PCR, and zymography, respectively. The IC50 value of bee venom was 28.5 µg/ml in which it leads to decrease of cell viability and induction of apoptosis. Incubation with bee venom also decreased the expression of matrix metalloproteinase-2 in this cell line (p < 0.05. In zymography, there was a reverse correlation between bee venom concentration and total matrix metalloproteinase-2 activity. Induction of apoptosis as well as inhibition of matrix metalloproteinase-2 activity and expression can be suggested as molecular mechanisms involved in cytotoxic and antimetastatic effects of bee venom against glioblastoma cells.

Microspheres of UO2, ThO2 and PuO2 for the high temperature reactor

International Nuclear Information System (INIS)

Brandau, E.

2002-01-01

The production of high temperature reactor fuel, so called pebble fuel, was done in the eighties by a special vibrational dropping process to obtain as sintered UO 2 - or ThO 2 -microspheres, so called 'Kernels', with a diameter size of about 300 μm. These microspheres have been coated and embedded in carbon balls to get the pebble fuel. Since the early nineties BRACE is developing the processings of microspheres starting with sols and suspensions to produce Al 2 O 3 , ZrO 2 , HfO 2 and Actinide oxide microspheres. Two main developments have been made: 1) the preparation of the feed solution (sol, suspension) and the solidification processing, and 2) the equipment, design, and electronic control have been completely changed. A newly developed suspension process for actinide oxides and for metal oxides e.g. Al 2 O 3 , TiO 2 , SiO 2 , ZrO 2 , HfO 2 , CeO 2 , ThO 2 , UO 2 , PuO 2 leads to cheaper production of as sintered microspheres. The processing and the installations will be described and the experience of production will be shown. (author)

The universal R-matrix and its associated quantum algebra as functionals of the classical r-matrix: the sl2 case

International Nuclear Information System (INIS)

Freidel, L.; Maillet, J.M.

1992-09-01

Using a geometrical approach to the quantum Yang-Baxter equation, the quantum algebra U h (sl 2 ) and its universal quantum R-matrix are explicitly constructed as functionals of the associated classical r-matrix. In this framework, the quantum algebra U h (sl 2 ) is naturally imbedded in the universal enveloping algebra of the sl 2 current algebra. (author) 13 refs

Multiscale Modeling of Ceramic Matrix Composites

Science.gov (United States)

Bednarcyk, Brett A.; Mital, Subodh K.; Pineda, Evan J.; Arnold, Steven M.

2015-01-01

Results of multiscale modeling simulations of the nonlinear response of SiC/SiC ceramic matrix composites are reported, wherein the microstructure of the ceramic matrix is captured. This micro scale architecture, which contains free Si material as well as the SiC ceramic, is responsible for residual stresses that play an important role in the subsequent thermo-mechanical behavior of the SiC/SiC composite. Using the novel Multiscale Generalized Method of Cells recursive micromechanics theory, the microstructure of the matrix, as well as the microstructure of the composite (fiber and matrix) can be captured.

DNA-nuclear matrix interactions and ionizing radiation sensitivity

International Nuclear Information System (INIS)

Schwartz, J.L.; Chicago Univ., IL; Vaughan, A.T.M.

1993-01-01

The association between inherent ionizing radiation sensitivity and DNA supercoil unwinding in mammalian cells suggests that the DNA-nuclear matrix attachment region (MAR) plays an important role in radiation response. In radioresistant cells, the MAR structure may exist in a more stable, open configuration, limiting DNA unwinding following strand break induction and maintaining DNA ends in close proximity for more rapid and accurate rejoining. In addition, the open configuration at these matrix attachment sites may serve to facilitate rapid DNA processing of breaks by providing (1) sites for repair proteins to collect and (2) energy to drive enzymatic reactions

Comparison of HfCl4, HfI4, TEMA-Hf, and TDMA-Hf as precursors in early growing stages of HfO2 films deposited by ALD: A DFT study

International Nuclear Information System (INIS)

Cortez-Valadez, M.; Fierro, C.; Farias-Mancilla, J.R.; Vargas-Ortiz, A.; Flores-Acosta, M.; Ramírez-Bon, R.; Enriquez-Carrejo, J.L.

2016-01-01

Highlights: • Hafnium oxide growth on Si(100) by atomic layer deposition was simulated. • The interface structure was considered as silicate and silicide. • The interface was studied employing DFT. • TDMA-Hf precursor show better interface stability. - Abstract: The final structure of HfO 2 films grown by atomic layer deposition (ALD) after reaction with OH − ions has been analyzed by DFT (density functional theory). The interaction of the precursors: HfCl 4 (hafnium tetrachloride), HfI 4 (hafnium tetraiodide), TEMA-Hf (tetrakis-ethylmethylamino hafnium), and TDMA-Hf (tetrakis-dimethylamino hafnium) with HO–H was studied employing the B3LYP (Becke 3-parameter, Lee–Yang–Parr) hybrid functional and the PBE (Perdew–Burke–Ernzerhof) generalized gradient functional. The structural evolution at the Si(100) surface has been analyzed by LDA (local density approximation). The structural parameters: bond length and bond angle, and the vibrational parameters for the optimized structures are also reported. The presence of hafnium silicate at the interface was detected. The infrared spectra and structural parameters obtained in this work agree with previously reported experimental results.

Polarization Behavior of Squeeze Cast Al2O3 Fiber Reinforced Aluminum Matrix Composites

International Nuclear Information System (INIS)

Ham, S. H.; Kang, Y. C.; Cho, K. M.; Park, I. M.

1992-01-01

Electrochemical polarization behavior of squeeze cast Al 2 O 3 short fiber reinforced Al alloy matrix composites was investigated for the basic understanding of the corrosion properties of the composites. The composites were fabricated with variations of fiber volume fraction and matrix alloys. It was found that the reinforced composites are more susceptible to corrosion attack than the unreinforced matrix alloys in general. Corrosion resistance shows decreasing tendency with increasing Al 2 O 3 fiber volume fraction in AC8A matrix. Effect of the matrix alloys revealed that the AC8A Al matrix composite is less susceptible to corrosion attack than the 2024 and 7075 Al matrix composites. Effect of plastic deformation on electrochemical polarization behavior of the squeeze cast Al/Al 2 O 3 composites was examined after extrusion of AC8A-10v/o Al 2 O 3 . Result shows that corrosion resistance is deteriorated after plastic deformation

Theoretical studies of the reaction dynamics of the matrix-isolated F2+cis-d2 -ethylene system

Science.gov (United States)

Raff, Lionel M.

1991-12-01

the relaxation rates for 1,2-difluoroethane-d2 and those for the HF(DF)+fluoroethylene products. The propensity for 1,2-difluoroethane-d2 to undergo orientational exchange increases as the available free space in the lattice decreases. Thus, it is a more important process in Ar than in Xe matrices. For the same reason, it occurs with greater frequency when the reactants are in an interstitial site than when they are substitutionally held. The probability of HF or DF elimination increases as the available free space in the matrix cage decreases. The relaxation rates show that this effect is not the result of different energy transfer rates. At least five distinct mechanisms play a role in HF and DF elimination reactions in the face-centered-cubic lattice. These are, in order of importance (a) αβ addition followed by syn elimination; (b) hydrogen- or deuterium-atom transfer to fluorine on the adjacent carbon followed by a protracted delay prior to C-F bond rupture; (c) rotation about the C=C double bond in the fluoroethylene product; (d) reversible hydrogen- or deuterium-atom transfer; and (e) atom addition with intervening delay. The computed elimination yield ratios between matrices are in good agreement with the experimental values. The calculated cis/trans ratio of fluoroethylenes formed subsequent to HF elimination in Ar are a factor of 2.7 lower than those observed in the experiments. The stabilization ratios are much larger than the experimental values. These results are interpreted to mean that the experimental matrix environment is more open and spacious than that for the crystal structure used in the calculations.

Al2O3 adherence on CoCrAl alloys

International Nuclear Information System (INIS)

Kingsley, L.M.

1980-04-01

Adherence of protective oxides on NiCrAl and CoCrAl superalloys has been promoted by a dispersion of a highly oxygen reactive element or its oxide being produced within the protection system. Two aspects of this subject are investigated here: the use of Al 2 O 3 as both the dispersion and protective oxide; and the production of an HfO 2 dispersion while simultaneously aluminizing the alloy. It was found that an Al 2 O 3 dispersion will act to promote the adherence of an external scale of Al 2 O 3 to a degree comparable to previously tested dispersions and an HfO 2 dispersion comparable to that produced by a Rhines pack treatment is produced during aluminization

NASA's Advanced Environmental Barrier Coatings Development for SiC/SiC Ceramic Matrix Composites: Understanding Calcium Magnesium Alumino-Silicate (CMAS) Degradations and Resistance

Science.gov (United States)

Zhu, Dongming

2014-01-01

Environmental barrier coatings (EBCs) and SiCSiC ceramic matrix composites (CMCs) systems will play a crucial role in next generation turbine engines for hot-section component applications because of their ability to significantly increase engine operating temperatures with improved efficiency, reduce engine weight and cooling requirements. The development of prime-reliant environmental barrier coatings is essential to the viability and reliability of the envisioned CMC engine component applications, ensuring integrated EBC-CMC system durability and designs are achievable for successful applications of the game-changing component technologies and lifing methodologies.This paper will emphasize recent NASA environmental barrier coating developments for SiCSiC turbine airfoil components, utilizing advanced coating compositions, state-of-the-art processing methods, and combined mechanical and environment testing and durability evaluations. The coating-CMC degradations in the engine fatigue-creep and operating environments are particularly complex; one of the important coating development aspects is to better understand engine environmental interactions and coating life debits, and we have particularly addressed the effect of Calcium-Magnesium-Alumino-Silicate (CMAS) from road sand or volcano-ash deposits on the durability of the environmental barrier coating systems, and how the temperature capability, stability and cyclic life of the candidate rare earth oxide and silicate coating systems will be impacted in the presence of the CMAS at high temperatures and under simulated heat flux conditions. Advanced environmental barrier coating systems, including HfO2-Si with rare earth dopant based bond coat systems, will be discussed for the performance improvements to achieve better temperature capability and CMAS resistance for future engine operating conditions.

Rigorous constraints on the matrix elements of the energy–momentum tensor

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Peter Lowdon

2017-11-01

Full Text Available The structure of the matrix elements of the energy–momentum tensor play an important role in determining the properties of the form factors A(q2, B(q2 and C(q2 which appear in the Lorentz covariant decomposition of the matrix elements. In this paper we apply a rigorous frame-independent distributional-matching approach to the matrix elements of the Poincaré generators in order to derive constraints on these form factors as q→0. In contrast to the literature, we explicitly demonstrate that the vanishing of the anomalous gravitomagnetic moment B(0 and the condition A(0=1 are independent of one another, and that these constraints are not related to the specific properties or conservation of the individual Poincaré generators themselves, but are in fact a consequence of the physical on-shell requirement of the states in the matrix elements and the manner in which these states transform under Poincaré transformations.

A H2O2 Biosensor Based on Immobilization of HorseradishPeroxidase in a Gelatine Network Matrix

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Jun-Jie Zhu

2005-05-01

Full Text Available A simple and promising H2O2 biosensor has been developed by successfulentrapment of horseradish peroxidase (HRP in a gelatine matrix which was cross-linkedwith formaldehyde. The large microscopic surface area and porous morphology of thegelatine matrix lead to high enzyme loading and the enzyme entrapped in this matrix canretain its bioactivity. This biosensor exhibited a fast amperometric response to hydrogenperoxide (H2O2. The linear range for H2O2 determination was from 2.5×10-5 to2.5×10-3 M, with a detection limit of 2.0×10-6 M based on S / N = 3. This biosensorpossessed very good reproducibility.

Statistical analysis of latent generalized correlation matrix estimation in transelliptical distribution

OpenAIRE

Han, Fang; Liu, Han

2016-01-01

Correlation matrices play a key role in many multivariate methods (e.g., graphical model estimation and factor analysis). The current state-of-the-art in estimating large correlation matrices focuses on the use of Pearson's sample correlation matrix. Although Pearson's sample correlation matrix enjoys various good properties under Gaussian models, it is not an effective estimator when facing heavy-tailed distributions. As a robust alternative, Han and Liu [J. Am. Stat. Assoc. 109 (2015) 275-2...

Study on Brewster angle thin film polarizer using hafnia-silica mixture as high-refractive-index material

Science.gov (United States)

Xu, Nuo; Zhu, Meiping; Sun, Jian; Chai, Yingjie; Kui, Yi; Zhao, Yuanan; Shao, Jianda

2018-02-01

Two kinds of polarizer coatings were prepared by electron beam evaporation, using HfO2-SiO2 mixture and HfO2 as the high-refractive-index materials, respectively. The HfO2-SiO2 mixture layer was implemented by coevaporating SiO2 and metal Hf, the materials were deposited at an oxygen atmosphere to achieve stoichiometric coatings. The certain HfO2 and SiO2 content ratio is controlled by adjusting the deposition rate of HfO2 and SiO2 using individual quartz crystal monitor. The spectral performance, surface and interfacial properties, as well as the laser-induced damage performance were studied and compared. Comparing with polarizer coating using HfO2 as high-refractive-index material, the polarizer coating using HfO2-SiO2 mixture as high-refractive-index material shows better performance with broader polarizing bandwidth, lower surface roughness, better interfacial property while maintaining high laser-induced damage threshold.

Joint-2D-SL0 Algorithm for Joint Sparse Matrix Reconstruction

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Dong Zhang

2017-01-01

Full Text Available Sparse matrix reconstruction has a wide application such as DOA estimation and STAP. However, its performance is usually restricted by the grid mismatch problem. In this paper, we revise the sparse matrix reconstruction model and propose the joint sparse matrix reconstruction model based on one-order Taylor expansion. And it can overcome the grid mismatch problem. Then, we put forward the Joint-2D-SL0 algorithm which can solve the joint sparse matrix reconstruction problem efficiently. Compared with the Kronecker compressive sensing method, our proposed method has a higher computational efficiency and acceptable reconstruction accuracy. Finally, simulation results validate the superiority of the proposed method.

An Ar threesome: Matrix models, 2d conformal field theories, and 4dN=2 gauge theories

International Nuclear Information System (INIS)

Schiappa, Ricardo; Wyllard, Niclas

2010-01-01

We explore the connections between three classes of theories: A r quiver matrix models, d=2 conformal A r Toda field theories, and d=4N=2 supersymmetric conformal A r quiver gauge theories. In particular, we analyze the quiver matrix models recently introduced by Dijkgraaf and Vafa (unpublished) and make detailed comparisons with the corresponding quantities in the Toda field theories and the N=2 quiver gauge theories. We also make a speculative proposal for how the matrix models should be modified in order for them to reproduce the instanton partition functions in quiver gauge theories in five dimensions.

Exercise-induced regulation of matrix metalloproteinases in the skeletal muscle of subjects with type 2 diabetes

DEFF Research Database (Denmark)

Scheede-Bergdahl, Celena; Bergdahl, Andreas; Schjerling, Peter

2014-01-01

-training. At baseline, there were no effects of diabetes on MMP or TIMP mRNA or protein. mRNA and protein response to training was similar in both groups, except active MMP-2 protein was elevated post training in T2DM only. Our results indicate that exercise-induced stimulation of MMPs is preserved in skeletal muscle......Matrix metalloproteinases (MMPs) and their tissue inhibitors (TIMP) play a critical role during vascular remodelling, in both health and disease. Impaired MMP regulation is associated with many diabetes-related complications. This study examined whether exercise-induced regulation of MMPs...... is maintained in the skeletal muscle of patients with uncomplicated type 2 diabetes (T2DM). Subjects [12 T2DM, 9 healthy control subjects (CON)] underwent 8 weeks of physical training. Messenger RNA (mRNA) was measured at baseline, during and after 8 weeks of training. Protein was measured pre- and post...

Preparation of Ethylene Vinyl Acetate/Zeolite 4A Mixed Matrix Membrane for CO2/N2 Separation

Directory of Open Access Journals (Sweden)

Iman Khalilinejad

2016-07-01

Full Text Available A great contribution in research activities on carbon dioxide (CO2 separation, as the most important challenge in greenhouse gases control, has been made to develop new polymeric membranes. In this case, mixed matrix membranes (MMMs, comprised of rigid particles dispersed in a continuous polymeric matrix, was proposed as an effective method to improve the separation properties of polymeric membranes. In this research, ethylene vinyl acetate (EVA copolymer and zeolite 4A powders were applied to prepare MMMs using solution casting/solvent evaporation method and CO2/N2 separation performance of the membranes was examined under different feed pressures (3-8 bar and operating temperatures (25-50°C. Morphological and structural characterizations of the membranes were evaluated using scanning electron microscopy (SEM, Fourier transform infrared (FTIR spectroscopy, differential scanning calorimetry (DSC, thermogravimetric analysis (TGA, density and solvent-induced swelling measurements. The gas permeability measurements through the constant-volume method showed the permeability of two gases increased in the presence of zeolite 4A nanoparticles in the polymer matrix. Calculation of diffusivity coefficients of gases revealed that improvement in the diffusivity of all gases into membrane matrix was the main reason for permeability enhancement. In addition, the increase in the CO2/N2 ideal selectivity with the presence of zeolite 4A nanoparticles in the polymer matrix was attributed to the increment in CO2/N2 diffusion selectivity. Under optimum condition, with the addition of 10 wt% zeolite 4A nanoparticles into the membrane matrix, the CO2 permeability increased from 20.81 to 35.24 Barrer and its related selectivity increased 20% compared to that of neat EVA membrane. Furthermore, the membrane performances increased upon feed pressure rise, while the selectivity decreased with the increase in temperature.

On the Control of the Fixed Charge Densities in Al2O3-Based Silicon Surface Passivation Schemes.

Science.gov (United States)

Simon, Daniel K; Jordan, Paul M; Mikolajick, Thomas; Dirnstorfer, Ingo

2015-12-30

A controlled field-effect passivation by a well-defined density of fixed charges is crucial for modern solar cell surface passivation schemes. Al2O3 nanolayers grown by atomic layer deposition contain negative fixed charges. Electrical measurements on slant-etched layers reveal that these charges are located within a 1 nm distance to the interface with the Si substrate. When inserting additional interface layers, the fixed charge density can be continuously adjusted from 3.5 × 10(12) cm(-2) (negative polarity) to 0.0 and up to 4.0 × 10(12) cm(-2) (positive polarity). A HfO2 interface layer of one or more monolayers reduces the negative fixed charges in Al2O3 to zero. The role of HfO2 is described as an inert spacer controlling the distance between Al2O3 and the Si substrate. It is suggested that this spacer alters the nonstoichiometric initial Al2O3 growth regime, which is responsible for the charge formation. On the basis of this charge-free HfO2/Al2O3 stack, negative or positive fixed charges can be formed by introducing additional thin Al2O3 or SiO2 layers between the Si substrate and this HfO2/Al2O3 capping layer. All stacks provide very good passivation of the silicon surface. The measured effective carrier lifetimes are between 1 and 30 ms. This charge control in Al2O3 nanolayers allows the construction of zero-fixed-charge passivation layers as well as layers with tailored fixed charge densities for future solar cell concepts and other field-effect based devices.

Interfacial microstructure of NiSi x/HfO2/SiO x/Si gate stacks

International Nuclear Information System (INIS)

Gribelyuk, M.A.; Cabral, C.; Gusev, E.P.; Narayanan, V.

2007-01-01

Integration of NiSi x based fully silicided metal gates with HfO 2 high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi x film. Ni content varies near the NiSi/HfO x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi x /HfO 2 interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi x /HfO x was found higher than that of poly-Si/HfO 2 , likely due to compositional non-uniformity of NiSi x . No intermixing between Hf, Ni and Si beyond interfacial roughness was observed

Matrix isolation infrared spectra of O2 and N2 insertion reactions with atomic uranium

International Nuclear Information System (INIS)

Hunt, R.D.; Toth, L.M.; Yustein, J.T.; Andrews, L.

1993-01-01

Laser ablation of refractory metals can be an effective source of vapor for matrix isolation IR studies. This combination of techniques was used for the first time to study the mechanisms of U vapor reactions with atmospheric components. U atoms and O 2 were codeposited with excess Ar at 12 K. The dominant codeposition products were UO 2 and UO 3 . In contrast, the UO yield was always small because UO 2 is formed by an insertion mechanism. This mechanism was verified in the 16 O 2 / 18 O 2 experiments which failed to produce 16 OU 18 O. The effects of UV photolysis and matrix annealings were also examined. The U atoms and O 2 reaction requires little or no activation energy since UO 2 was formed from cold reagents. New charge-transfer species, (UO 2+ 2 )(O 2- 2 ) and (UO + 2 )(O - 2 ), and a weak complex, UO 3 --O 2 , were primarily produced under conditions which favored further O 2 reactions. Similar U atom and N 2 experiments produced only linear NUN which is also produced by an insertion mechanism. This U reaction represents the first time that atom was observed breaking and inserting into the triple bond of N 2 . Photolysis dramatically increased the NUN yield by 3-fold. Matrix annealings produced weak UN 2 --N 2 and UN 2 --2N 2 complexes

Matrix isolation infrared spectra of O2 and N2 insertion reactions with atomic uranium

Science.gov (United States)

Hunt, Rodney D.; Toth, L. Mac; Yustein, Jason T.; Andrews, Lester

1993-10-01

Laser ablation of refractory metals can be an effective source of vapor for matrix isolation IR studies. This combination of techniques was used for the first time to study the mechanisms of U vapor reactions with atmospheric components. U atoms and O2 were codeposited with excess Ar at 12 K. The dominant codeposition products were UO2 and UO3. In contrast, the UO yield was always small because UO2 is formed by an insertion mechanism. This mechanism was verified in the 16O2/18O2 experiments which failed to produce 16OU18O. The effects of UV photolysis and matrix annealings were also examined. The U atoms and O2 reaction requires little or no activation energy since UO2 was formed from cold reagents. New charge-transfer species, (UO2+2)(O2-2) and (UO+2)(O-2), and a weak complex, UO3-O2, were primarily produced under conditions which favored further O2 reactions. Similar U atom and N2 experiments produced only linear NUN which is also produced by an insertion mechanism. This U reaction represents the first time that atom was observed breaking and inserting into the triple bond of N2. Photolysis dramatically increased the NUN yield by 3-fold. Matrix annealings produced weak UN2-N2 and UN2-2N2 complexes.

XAFS atomistic insight of the oxygen gettering in Ti/HfO 2 based OxRRAM

Science.gov (United States)

Viennet, R.; Roussel, H.; Rapenne, L.; Deschanvres, J. L.; Renevier, H.; Jousseaume, V.; Jalaguier, E.; Proietti, M. G.

2018-05-01

Hafnia-based resistive memories technology has come to maturation and acceded to the market of nonvolatile memories. Nevertheless, the physical mechanisms involved in resistive switching are not yet fully understood and the numerous ab initio simulations studies have few many atomic-scale experimental counterparts. In this study we investigate the oxygen migration mechanism from an amorphous HfO2 layer to the Ti cap layer at a local scale before and after a thermal treatment. X-ray absorption spectroscopy at the Ti K edge and Hf LIII edge has been performed on samples as-deposited and annealed in Ar at 400 ∘C to mimic the back-end-of-line thermal budget (BEOL) of CMOS technology. The short-range Ti and Hf environments have been determined, showing that annealing promotes the migration of O from HfO2 to Ti, the amount of which is quantified. This provokes an expansion and an increase of atomic disorder in the Ti lattice. The nature of the oxygen gettering mechanism by the Ti metal is understood by comparing samples with increasing Ti-capping thickness. We show that the Ti getter effect has to be activated by thermal treatment and that the O diffusion takes place in a region of a few nanometers close to the Ti /HfO2 interface. Therefore, the thermal budget history and the Ti cap-layer thickness determine the oxygen vacancy content in the HfO2 layer, which in turn controls the electrical properties, especially the forming operation.

Threshold current reduction for the metal–insulator transition in NbO2−x-selector devices: the effect of ReRAM integration

International Nuclear Information System (INIS)

Nandi, Sanjoy Kumar; Liu, Xinjun; Venkatachalam, Dinesh Kumar; Elliman, Robert Glen

2015-01-01

The threshold current for inducing the metal–insulator transition in a NbO 2−x selector element is shown to be affected by the properties of an adjacent memory element when integrated into a hybrid selector-memory device structure. Experimental results are reported for homogeneous NbO 2−x /Nb 2 O 5−y and heterogeneous NbO 2−x /HfO 2 device structures, and show that the threshold current is lower in both hybrid structures than in the selector element alone, and is lower in the heterogeneous structure than in the homogeneous structure. Finite element modeling of the selector-memory structure shows that this results primarily from current confinement produced by the filamentary conduction path in the resistive-switching memory layer (i.e. Nb 2 O 5−y or HfO 2 ), an observation that further implies a smaller diameter filament in HfO 2 than in Nb 2 O 5−y . The thermal and electrical conductivities of the memory layer are also shown to influence the threshold current, but to a lesser extent. (paper)

H∞ /H2 model reduction through dilated linear matrix inequalities

DEFF Research Database (Denmark)

Adegas, Fabiano Daher; Stoustrup, Jakob

2012-01-01

This paper presents sufficient dilated linear matrix inequalities (LMI) conditions to the $H_{infty}$ and $H_{2}$ model reduction problem. A special structure of the auxiliary (slack) variables allows the original model of order $n$ to be reduced to an order $r=n/s$ where $n,r,s in field{N}$. Arb......This paper presents sufficient dilated linear matrix inequalities (LMI) conditions to the $H_{infty}$ and $H_{2}$ model reduction problem. A special structure of the auxiliary (slack) variables allows the original model of order $n$ to be reduced to an order $r=n/s$ where $n,r,s in field...

VANGL2 interacts with integrin αv to regulate matrix metalloproteinase activity and cell adhesion to the extracellular matrix.

Science.gov (United States)

Jessen, Tammy N; Jessen, Jason R

2017-12-15

Planar cell polarity (PCP) proteins are implicated in a variety of morphogenetic processes including embryonic cell migration and potentially cancer progression. During zebrafish gastrulation, the transmembrane protein Vang-like 2 (VANGL2) is required for PCP and directed cell migration. These cell behaviors occur in the context of a fibrillar extracellular matrix (ECM). While it is thought that interactions with the ECM regulate cell migration, it is unclear how PCP proteins such as VANGL2 influence these events. Using an in vitro cell culture model system, we previously showed that human VANGL2 negatively regulates membrane type-1 matrix metalloproteinase (MMP14) and activation of secreted matrix metalloproteinase 2 (MMP2). Here, we investigated the functional relationship between VANGL2, integrin αvβ3, and MMP2 activation. We provide evidence that VANGL2 regulates cell surface integrin αvβ3 expression and adhesion to fibronectin, laminin, and vitronectin. Inhibition of MMP14/MMP2 activity suppressed the cell adhesion defect in VANGL2 knockdown cells. Furthermore, our data show that MMP14 and integrin αv are required for increased proteolysis by VANGL2 knockdown cells. Lastly, we have identified integrin αvβ3 as a novel VANGL2 binding partner. Together, these findings begin to dissect the molecular underpinnings of how VANGL2 regulates MMP activity and cell adhesion to the ECM. Copyright © 2017 The Authors. Published by Elsevier Inc. All rights reserved.

Habituation/Fatigue behavior of a synapse memristor based on IGZO-HfO2 thin film.

Science.gov (United States)

Jiang, Ran; Ma, Pengfei; Han, Zuyin; Du, Xianghao

2017-08-24

A synaptic memristor based on IGZO and oxygen-deficient HfO 2 films has been demonstrated. The memristor exhibits a fatigue response to a monotonic stimulus of voltage pulses, which is analogous to the habituation behavior of biological memory. The occurrence of habituation is nearly simultaneous with the transition from short-term memory to long-term memory. The movement and redistribution of oxygen species with the assistance of polarization in HfO 2 layer are responsible for the above results. The observation of habituation behavior proves the potential prospect of memristor on the mimic of biological neuron.

Making LULUCF matrix of Korea by Approach 2&3

Science.gov (United States)

Hwang, J.; Jang, R.; Seong, M.; Yim, J.; Jeon, S. W.

2017-12-01

To establish and implement policies in response to climate change, it is very important to identify domestic greenhouse gas emission sources and sinks, and accurately calculate emissions and removals from each source and sink. The IPCC Guideline requires the establishment of six sectors of energy, industrial processes, solvents and other product use, agriculture, Land-Use Change and Forestry (LULUCF) and waste in estimating GHG inventories. LULUCF is divided into 6 categories according to land use, purpose, and type, and then it calculates greenhouse gas emission/absorption amount due to artificial activities according to each land use category and greenhouse gas emission/absorption amount according to land use change. The IPCC Guideline provides three approaches to how to create a LULUCF discipline matrix. According to the IPCC Guidelines, it is a principle to divide into the land use that is maintained and the land use area changed to other lands. However, Korea currently uses Approach 1, which is based on statistical data, it is difficult to detect changed area. Therefore, in this study, we are going to do a preliminary work for constructing the LULUCF matrix at Approach 2 & 3 level. NFI data, GIS, and RS data were used to build the matrix of Approach 2 method by Sampling method. For used for Approach 3, we analyzed the four thematic maps - Cadastral Map, Land Cover Map, Forest Type Map, and Biotope Map - representing land cover and utilization in terms of legal, property, quantitative and qualitative aspects. There is a difference between these maps because their purpose, resolution, timing and spatial range are different. Comparing these maps is important because it can help for decide map which is suitable for constructing the LULUCF matrix.Keywords: LULUCF, GIS/RS, IPCC Guideline, Approach 2&3, Thematic Maps

Superoxide activates mitochondrial uncoupling protein 2 from the matrix side. Studies using targeted antioxidants.

Science.gov (United States)

Echtay, Karim S; Murphy, Michael P; Smith, Robin A J; Talbot, Darren A; Brand, Martin D

2002-12-06

Superoxide activates nucleotide-sensitive mitochondrial proton transport through the uncoupling proteins UCP1, UCP2, and UCP3 (Echtay, K. S., et al. (2002) Nature 415, 1482-1486). Two possible mechanisms were proposed: direct activation of the UCP proton transport mechanism by superoxide or its products and a cycle of hydroperoxyl radical entry coupled to UCP-catalyzed superoxide anion export. Here we provide evidence for the first mechanism and show that superoxide activates UCP2 in rat kidney mitochondria from the matrix side of the mitochondrial inner membrane: (i) Exogenous superoxide inhibited matrix aconitase, showing that external superoxide entered the matrix. (ii) Superoxide-induced uncoupling was abolished by low concentrations of the mitochondrially targeted antioxidants 10-(6'-ubiquinonyl)decyltriphenylphosphonium (mitoQ) or 2-[2-(triphenylphosphonio)ethyl]-3,4-dihydro-2,5,7,8-tetramethyl-2H-1-benzopyran-6-ol bromide (mitoVit E), which are ubiquinone (Q) or tocopherol derivatives targeted to the matrix by covalent attachment to triphenylphosphonium cation. However, superoxide-induced uncoupling was not affected by similar concentrations of the nontargeted antioxidants Q(o), Q(1), decylubiquinone, vitamin E, or 6-hydroxy-2,5,7,8-tetramethylchroman 2-carboxylic acid (TROLOX) or of the mitochondrially targeted but redox-inactive analogs decyltriphenylphosphonium or 4-chlorobutyltriphenylphosphonium. Thus matrix superoxide appears to be necessary for activation of UCP2 by exogenous superoxide. (iii) When the reduced to oxidized ratio of mitoQ accumulated by mitochondria was increased by inhibiting cytochrome oxidase, it induced nucleotide-sensitive uncoupling that was not inhibited by external superoxide dismutase. Under these conditions quinols are known to produce superoxide, and because mitoQ is localized within the mitochondrial matrix this suggests that production of superoxide in the matrix was sufficient to activate UCP2. Furthermore, the superoxide

Representation of the Coulomb Matrix Elements by Means of Appell Hypergeometric Function F 2

Science.gov (United States)

Bentalha, Zine el abidine

2018-06-01

Exact analytical representation for the Coulomb matrix elements by means of Appell's double series F 2 is derived. The finite sum obtained for the Appell function F 2 allows us to evaluate explicitly the matrix elements of the two-body Coulomb interaction in the lowest Landau level. An application requiring the matrix elements of Coulomb potential in quantum Hall effect regime is presented.

Different matrix micro-environments in colon cancer and diverticular disease.

Science.gov (United States)

Klinge, U; Rosch, R; Junge, K; Krones, C J; Stumpf, M; Lynen-Jansen, P; Mertens, P R; Schumpelick, V

2007-05-01

The extracellular matrix and the interactive signalling between its components are thought to play a pivotal role for tumour development and metastasis formation. An altered matrix composition as potential underlying pathology for the development of colorectal cancer was hypothesized. In a retrospective study of patients with colon cancer, the extracellular matrix in tumour-free bowel specimen was investigated in comparison with non-infected bowel specimen from patients operated on for colonic diverticulosis. The following matrix parameters with known associations to tumour formation, cell proliferation, invasion and metastasis were analysed by immunohistochemistry and quantified by a scoring system: VEGF, TGF-beta, ESDN, CD117, c-erb-2, cyclin D1, p53, p27, COX-2, YB-1, collagen I/III, MMP-13, PAI and uPAR. Expression profiles and correlations were calculated. The comparison of the two groups revealed a significantly decreased immunostaining for CD117 and TGF-beta in the cancer group (8.5+/-2.6 vs 10.3+/-2,1 and 4.9+/-1.5 vs 8.1+/-3, respectively), whereas PAI scores were significantly higher than in patients with diverticular disease (8.1+/-1.6 vs 6.2+/-0.9). Overall correlation patterns of matrix parameters indicated pronounced differences between tumour-free tissue in cancer patients compared with patients with diverticular disease. Our results indicate distinct differences in the colonic tissue architecture between cancer patients and patients with diverticulitis that support the notion of an altered matrix composition predisposing to the development of colon cancer.

Exact 2-point function in Hermitian matrix model

International Nuclear Information System (INIS)

Morozov, A.; Shakirov, Sh.

2009-01-01

J. Harer and D. Zagier have found a strikingly simple generating function [1,2] for exact (all-genera) 1-point correlators in the Gaussian Hermitian matrix model. In this paper we generalize their result to 2-point correlators, using Toda integrability of the model. Remarkably, this exact 2-point correlation function turns out to be an elementary function - arctangent. Relation to the standard 2-point resolvents is pointed out. Some attempts of generalization to 3-point and higher functions are described.

Extended N=2 supersymmetric matrix (1, s)-KdV hierarchies

International Nuclear Information System (INIS)

Krivonos, S.O.; Sorin, A.S.

1997-01-01

We propose the Lax operators for N=2 supersymmetric matrix generalization of the bosonic (1, s)-KdV hierarchies. The simplest examples - the N=2 supersymmetric a=4 KdV and a=5/2 Boussinesq hierarchies - are discussed in detail

Mixed matrix membranes with fast and selective transport pathways for efficient CO2 separation

Science.gov (United States)

Hou, Jinpeng; Li, Xueqin; Guo, Ruili; Zhang, Jianshu; Wang, Zhongming

2018-03-01

To improve CO2 separation performance, porous carbon nanosheets (PCNs) were used as a filler into a Pebax MH 1657 (Pebax) matrix, fabricating mixed matrix membranes (MMMs). The PCNs exhibited a preferential horizontal orientation within the Pebax matrix because of the extremely large 2D plane and nanoscale thickness of the matrix. Therefore, the micropores of the PCNs provided fast CO2 transport pathways, which led to increased CO2 permeability. The reduced pore size of the PCNs was a consequence of the overlapping of PCNs and the polymer chains penetrating into the pores of the PCNs. The reduction in the pore size of the PCNs improved the CO2/gas selectivity. As a result, the CO2 permeability and CO2/CH4 selectivity of the Pebax membrane with 10 wt% PCNs-loading (Pebax-PCNs-10) were 520 barrer and 51, respectively, for CO2/CH4 mixed-gas. The CO2 permeability and CO2/N2 selectivity of the Pebax-PCNs-10 membrane were 614 barrer and 61, respectively, for CO2/N2 mixed-gas.

Annexin A2 Mediates the Localization of Measles Virus Matrix Protein at the Plasma Membrane.

Science.gov (United States)

Koga, Ritsuko; Kubota, Marie; Hashiguchi, Takao; Yanagi, Yusuke; Ohno, Shinji

2018-02-28

Annexins are a family of structurally related proteins that bind negatively charged membrane phospholipids in a Ca 2+ -dependent manner. Annexin A2 (AnxA2), a member of the family, has been implicated in a variety of cellular functions including the organization of membrane domains, vesicular trafficking and cell-cell adhesion. AnxA2 generally forms the heterotetrameric complex with a small Ca 2+ -binding protein S100A10. Measles virus (MV), a member of the family Paramyxoviridae , is an enveloped virus with a nonsegmented negative strand RNA genome. Knockdown of AnxA2 greatly reduced MV growth in cells, without affecting its entry and viral RNA production. In MV-infected, AnxA2-knockdown cells, the expression level of the matrix (M) protein, but not other viral proteins, was reduced compared with that in control cells, and the distribution of the M protein at the plasma membrane was decreased. The M protein lines the inner surface of the envelope and plays an important role in virus assembly by connecting the nucleocapsid to the envelope proteins. The M protein bound to AnxA2 independently of AnxA2's phosphorylation or its association with S100A10, and was co-localized with AnxA2 within cells. Truncation of the N-terminal 10 amino acid residues, but not the N-terminal 5 residues, compromised the ability of the M protein to interact with AnxA2 and localize at the plasma membrane. These results indicate that AnxA2 mediates the localization of the MV M protein at the plasma membrane by interacting with its N-terminal region (especially residues at positions 6-10), thereby aiding in MV assembly. IMPORTANCE Measles virus (MV) is an important human pathogen, still claiming ∼ 100,000 lives per year despite the presence of effective vaccines, and causes occasional outbreaks even in developed countries. Replication of viruses largely relies on the functions of host cells. Our study revealed that the reduction of the host protein annexin A2 compromises the replication of

Thermal evolution of CaO-doped HfO{sub 2} films and powders

Energy Technology Data Exchange (ETDEWEB)

Barolin, S A; Sanctis, O A de [Lab. Materiales Ceramicos, FCEIyA, Universidad Nacional de Rosario, IFIR-CONICET (Argentina); Caracoche, M C; Martinez, J A; Taylor, M A; Pasquevich, A F [Departamento de Fisica, FCE, Universidad Nacional de La Plata, IFLP-CONICET (Argentina); Rivas, P C, E-mail: oski@fceia.unr.edu.a [Facultad de Ciencias Agronomicas y Forestales, Universidad Nacional de La Plata, IFLP (Argentina)

2009-05-01

Solid solutions of ZrO2 and HfO2 are potential electrolyte materials for intermediate-temperature SOFC because both are oxygen-ion conductors. The main challenge for these compounds is to reduce the relatively high value of the activation energies vacancies diffusion, which is influenced by several factors. In this work the thermal evolution of CaO-HfO{sub 2} materials have been investigated. (CaO)y-Hf(1-y)O(2-y) (y = 0.06, 0.14 y 0.2) coatings and powders were synthesized by chemical solution deposition (CSD). Films were deposited onto alumina substrates by Dip Coating technique, the burning of organic waste was carried out at 500 deg. C under normal atmosphere and then the films were thermally treated at intervals of temperature rising to a maximum temperature of 1250 deg. C. By means Glazing Incidence X-ray Diffraction (rho-2theta configuration) the phases were studied in the annealed films. On the other hand, the thermal evolution and crystallization process of powders were analyzed in-situ by HT-XRD. The phenomena crystallization occurred in films and powders were analyzed. The activation energies of diffusion of oxygen vacancies of HfO2-14 mole% CaO and HfO2-20 mole% CaO films were measured from the thermal evolution of the relaxation constant measured by Perturbed Angular Correlation Technique.

Engineering of the chemical reactivity of the Ti/HfO₂ interface for RRAM: experiment and theory.

Science.gov (United States)

Calka, Pauline; Sowinska, Malgorzata; Bertaud, Thomas; Walczyk, Damian; Dabrowski, Jarek; Zaumseil, Peter; Walczyk, Christian; Gloskovskii, Andrei; Cartoixà, Xavier; Suñé, Jordi; Schroeder, Thomas

2014-04-09

The Ti/HfO2 interface plays a major role for resistance switching performances. However, clear interface engineering strategies to achieve reliable and reproducible switching have been poorly investigated. For this purpose, we present a comprehensive study of the Ti/HfO2 interface by a combined experimental-theoretical approach. Based on the use of oxygen-isotope marked Hf*O2, the oxygen scavenging capability of the Ti layer is clearly proven. More importantly, in line with ab initio theory, the combined HAXPES-Tof-SIMS study of the thin films deposited by MBE clearly establishes a strong impact of the HfO2 thin film morphology on the Ti/HfO2 interface reactivity. Low-temperature deposition is thus seen as a RRAM processing compatible way to establish the critical amount of oxygen vacancies to achieve reproducible and reliable resistance switching performances.

Thickness measurement of a thin hetero-oxide film with an interfacial oxide layer by X-ray photoelectron spectroscopy

Science.gov (United States)

Kim, Kyung Joong; Lee, Seung Mi; Jang, Jong Shik; Moret, Mona

2012-02-01

The general equation Tove = L cos θ ln(Rexp/R0 + 1) for the thickness measurement of thin oxide films by X-ray photoelectron spectroscopy (XPS) was applied to a HfO2/SiO2/Si(1 0 0) as a thin hetero-oxide film system with an interfacial oxide layer. The contribution of the thick interfacial SiO2 layer to the thickness of the HfO2 overlayer was counterbalanced by multiplying the ratio between the intensity of Si4+ from a thick SiO2 film and that of Si0 from a Si(1 0 0) substrate to the intensity of Si4+ from the HfO2/SiO2/Si(1 0 0) film. With this approximation, the thickness levels of the HfO2 overlayers showed a small standard deviation of 0.03 nm in a series of HfO2 (2 nm)/SiO2 (2-6 nm)/Si(1 0 0) films. Mutual calibration with XPS and transmission electron microscopy (TEM) was used to verify the thickness of HfO2 overlayers in a series of HfO2 (1-4 nm)/SiO2 (3 nm)/Si(1 0 0) films. From the linear relation between the thickness values derived from XPS and TEM, the effective attenuation length of the photoelectrons and the thickness of the HfO2 overlayer could be determined.

Self-Ordered Voids Formation in SiO2 Matrix by Ge Outdiffusion

OpenAIRE

B. Pivac; P. Dubček; J. Dasović; H. Zorc; S. Bernstorff; J. Zavašnik; B. Vlahovic

2018-01-01

The annealing behavior of very thin SiO2/Ge multilayers deposited on Si substrate by e-gun deposition in high vacuum was explored. It is shown that, after annealing at moderate temperatures (800°C) in inert atmosphere, Ge is completely outdiffused from the SiO2 matrix leaving small (about 3 nm) spherical voids embedded in the SiO2 matrix. These voids are very well correlated and formed at distances governed by the preexisting multilayer structure (in vertical direction) and self-organization ...

Ultem®/ZIF-8 mixed matrix hollow fiber membranes for CO2/N2 separations

KAUST Repository

Dai, Ying

2012-05-01

Organic-inorganic hybrid (mixed matrix) membranes can potentially extend the separation performance of traditional polymeric materials while maintaining processing convenience. Although many dense films studies have been reported, there have been few reported cases of these materials being successfully extended to asymmetric hollow fibers. In this work we report the first successful production of mixed matrix asymmetric hollow fiber membranes containing metal-organic-framework (MOF) ZIF-8 fillers. Specifically, we have incorporated ZIF-8 into a polyetherimide (Ultem ® 1000) matrix and produced dual-layer asymmetric hollow fiber membranes via the dry jet-wet quench method. The outer separating layer of these composite fibers contains 13wt% (17vol%) of ZIF-8 filler. These membranes have been tested over a range of temperatures and pressures for a variety of gas pairs. An increase in separation performance for the CO 2/N 2 gas pairs was observed for both pure gas and mixed gas feeds. © 2012 Elsevier B.V.

Ultem®/ZIF-8 mixed matrix hollow fiber membranes for CO2/N2 separations

KAUST Repository

Dai, Ying; Johnson, J.R.; Karvan, Oğuz; Sholl, David S.; Koros, W.J.

2012-01-01

Organic-inorganic hybrid (mixed matrix) membranes can potentially extend the separation performance of traditional polymeric materials while maintaining processing convenience. Although many dense films studies have been reported, there have been few reported cases of these materials being successfully extended to asymmetric hollow fibers. In this work we report the first successful production of mixed matrix asymmetric hollow fiber membranes containing metal-organic-framework (MOF) ZIF-8 fillers. Specifically, we have incorporated ZIF-8 into a polyetherimide (Ultem ® 1000) matrix and produced dual-layer asymmetric hollow fiber membranes via the dry jet-wet quench method. The outer separating layer of these composite fibers contains 13wt% (17vol%) of ZIF-8 filler. These membranes have been tested over a range of temperatures and pressures for a variety of gas pairs. An increase in separation performance for the CO 2/N 2 gas pairs was observed for both pure gas and mixed gas feeds. © 2012 Elsevier B.V.

Studies on Optical and Electrical Properties of Hafnium Oxide Nanoparticles

Science.gov (United States)

Jayaraman, Venkatachalam; Sagadevan, Suresh; Sudhakar, Rajesh

2017-07-01

In this paper, the synthesis and physico-chemical properties of hafnium oxide nanoparticles (HfO2 NPs) are analyzed and reported. The synthesis was carried out by the precipitation route by using hafnium tetrachloride (HfCl4) as precursor material with potassium hydroxide (KOH) dissolved in Millipore water. In the precipitation technique, the chemical reaction is comparatively simple, low-cost and non-toxic compared to other synthetic methods. The synthesized HfO2 NPs were characterized by using powder x-ray diffraction (PXRD), ultraviolet-visible (UV-Vis) spectroscopy, Raman analysis, and high-resolution transmission electron microscopy (HRTEM). The monoclinic structure of the HfO2 NPs was resolved utilizing x-ray diffraction (XRD). The optical properties were studied from the UV-Vis absorption spectrum. The optical band gap of the HfO2NPs was observed to be 5.1 eV. The Raman spectrum shows the presence of HfO2 NPs. The HRTEM image showed that the HfO2 NPs were of spherical shape with an average particle size of around 28 nm. The energy-dispersive x-ray spectroscopy (EDS) spectrum obviously demonstrated the presence of HfO2 NPs. Analysis and studies on the dielectric properties of the HfO2 NPs such as the dielectric constant, the dielectric loss, and alternating current (AC) conductivity were carried out at varying frequencies and temperatures.

Emulador de Master System 2 corriendo bajo PlayStation Portable

OpenAIRE

García Flores, Jorge

2013-01-01

Creación de un emulador de Master System 2 (videoconsola de SEGA) para ser ejecutado en PlayStation Portable (videoconsola de Sony), implentando los lenguajes de programación C y ensamblados. El uso de este emulador servirá para poder ejecutar los videojuegos para Master System 2 en la videoconsola PlayStation Portable. Ingeniería Técnica en Informática de Gestión

Composition Feature of the Element Tangent Stiffness Matrix of Geometrically Nonlinear 2D Frame Structures

Directory of Open Access Journals (Sweden)

Romanas Karkauskas

2011-04-01

Full Text Available The expressions of the finite element method tangent stiffness matrix of geometrically nonlinear constructions are not fully presented in publications. The matrixes of small displacements stiffness are usually presented only. To solve various problems of construction analysis or design and to specify the mode of the real deflection of construction, it is necessary to have a fully described tangent matrix analytical expression. This paper presents a technique of tangent stiffness matrix generation using discrete body total potential energy stationary conditions considering geometrically nonlinear 2D frame element taking account of interelement interaction forces only. The obtained vector-function derivative of internal forces considering nodal displacements is the tangent stiffness matrix. The analytical expressions having nodal displacements of matrixes forming the content of the 2D frame construction element tangent stiffness matrix are presented in the article. The suggested methodology has been checked making symbolical calculations in the medium of MatLAB calculation complex. The analytical expression of the stiffness matrix has been obtained.Article in Lithuanian

Very large phase shift of microwave signals in a 6 nm Hf x Zr1-x O2 ferroelectric at ±3 V

Science.gov (United States)

Dragoman, Mircea; Modreanu, Mircea; Povey, Ian M.; Iordanescu, Sergiu; Aldrigo, Martino; Romanitan, Cosmin; Vasilache, Dan; Dinescu, Adrian; Dragoman, Daniela

2017-09-01

In this letter, we report for the first time very large phase shifts of microwaves in the 1-10 GHz range, in a 1 mm long gold coplanar interdigitated structure deposited over a 6 nm Hf x Zr1-x O2 ferroelectric grown directly on a high resistivity silicon substrate. The phase shift is larger than 60° at 1 GHz and 13° at 10 GHz at maximum applied DC voltages of ±3 V, which can be supplied by a simple commercial battery. In this way, we demonstrate experimentally that the new ferroelectrics based on HfO2 could play an important role in the future development of wireless communication systems for very low power applications.

Correlation between expression of extracellular matrix metalloproteinase inducer and matrix metalloproteinase-2 and cervical lymph node metastasis of nasopharyngeal carcinoma.

Science.gov (United States)

Huang, Tian; Chen, Mao-Huai; Wu, Ming-Yao; Wu, Xian-Ying

2013-03-01

We evaluated the expression of extracellular matrix metalloproteinase inducer (EMMPRIN) and matrix metalloproteinase-2 (MMP-2) in nasopharyngeal carcinoma (NPC) and studied their relationship with cervical lymph node metastasis. Immunohistochemical staining was used to detect the expression of EMMPRIN and MMP-2 in specimens from patients with chronic nasopharyngitis (CN), nonmetastastic NPC (NM-NPC), and lymph node-metastatic NPC (LNM-NPC). The rates of positive EMMPRIN expression in CN, NM-NPC, and LNM-NPC were 13.3%, 30.0%, and 66.7%, respectively. Significant differences were found between the rates in CN and LNM-NPC (p correlated (rs = 0.466; p <0.01). Nasopharyngeal carcinoma cells may attain enhanced metastastic capability through the expression of MMP-2 induced by EMMPRIN.

Matrix diffusion user guide (release 2)

International Nuclear Information System (INIS)

Herbert, A.W.; Preece, T.E.

1989-04-01

This report presents an introduction to the use of the matrix diffusion option of the finite-element package NAMMU. The facilities available in the package are described; and the process of preparing the necessary input data is illustrated with an example. The matrix diffusion option of NAMMU models the transport of radionuclides in groundwater in a flow field governed by Darcy's Law. A detailed description of the mathematical model used for this option is given. The package uses the finite-element method. This allows the easy modelling of complex geological structures. (author)

Biochemical and biomechanical properties of the pacemaking sinoatrial node extracellular matrix are distinct from contractile left ventricular matrix.

Directory of Open Access Journals (Sweden)

Jessica M Gluck

Full Text Available Extracellular matrix plays a role in differentiation and phenotype development of its resident cells. Although cardiac extracellular matrix from the contractile tissues has been studied and utilized in tissue engineering, extracellular matrix properties of the pacemaking sinoatrial node are largely unknown. In this study, the biomechanical properties and biochemical composition and distribution of extracellular matrix in the sinoatrial node were investigated relative to the left ventricle. Extracellular matrix of the sinoatrial node was found to be overall stiffer than that of the left ventricle and highly heterogeneous with interstitial regions composed of predominantly fibrillar collagens and rich in elastin. The extracellular matrix protein distribution suggests that resident pacemaking cardiomyocytes are enclosed in fibrillar collagens that can withstand greater tensile strength while the surrounding elastin-rich regions may undergo deformation to reduce the mechanical strain in these cells. Moreover, basement membrane-associated adhesion proteins that are ligands for integrins were of low abundance in the sinoatrial node, which may decrease force transduction in the pacemaking cardiomyocytes. In contrast to extracellular matrix of the left ventricle, extracellular matrix of the sinoatrial node may reduce mechanical strain and force transduction in pacemaking cardiomyocytes. These findings provide the criteria for a suitable matrix scaffold for engineering biopacemakers.

Matrix metalloproteinase 2 and membrane type 1 matrix metalloproteinase co-regulate axonal outgrowth of mouse retinal ganglion cells

DEFF Research Database (Denmark)

Gaublomme, Djoere; Buyens, Tom; De Groef, Lies

2014-01-01

regenerative therapies, an improved understanding of axonal outgrowth and the various molecules influencing it, is highly needed. Matrix metalloproteinases (MMPs) constitute a family of zinc-dependent proteases that were sporadically reported to influence axon outgrowth. Using an ex vivo retinal explant model......, but not MMP-9, are involved in this process. Furthermore, administration of a novel antibody to MT1-MMP that selectively blocks pro-MMP-2 activation revealed a functional co-involvement of these proteinases in determining RGC axon outgrowth. Subsequent immunostainings showed expression of both MMP-2 and MT1...... nervous system is lacking in adult mammals, thereby impeding recovery from injury to the nervous system. Matrix metalloproteinases (MMPs) constitute a family of zinc-dependent proteases that were sporadically reported to influence axon outgrowth. Inhibition of specific MMPs reduced neurite outgrowth from...

Early increased levels of matrix metalloproteinase-9 in neonates recovering from respiratory distress syndrome

NARCIS (Netherlands)

Dik, Willem A.; van Kaam, Anton H. L. C.; Dekker, Tamara; Naber, Brigitta A. E.; Janssen, Daphne J.; Kroon, A. A.; Zimmermann, Luc J. I.; Versnel, Marjan A.; Lutter, René

2006-01-01

Aim: Matrix metalloproteinases (MMPs) play an eminent role in airway injury and remodelling. We explored the hypothesis that pulmonary MMP levels would differ early after birth (2-4 days) between infants with resolving respiratory distress syndrome (RDS) and infants developing chronic lung disease

Role of matrix metalloprotease-2 in oxidant activation of Ca ATPase ...

Indian Academy of Sciences (India)

Unknown

We sought to determine the role of matrix metalloprotease-2 (MMP-2) ... Ca2+ overload in cells and tissues (Bennet and Williams. 1993; Ghosh et ..... tease balance in favour of the protease. ... This work was partly supported by the Life Science.

Clonorchis sinensis excretory-secretory products regulate migration and invasion in cholangiocarcinoma cells via extracellular signal-regulated kinase 1/2/nuclear factor-κB-dependent matrix metalloproteinase-9 expression.

Science.gov (United States)

Pak, Jhang Ho; Shin, Jimin; Song, In-Sung; Shim, Sungbo; Jang, Sung-Wuk

2017-01-01

Matrix metalloproteinase-9 plays an important role in the invasion and metastasis of various types of cancer cells. We have previously reported that excretory-secretory products from Clonorchis sinensis increases matrix metalloproteinase-9 expression. However, the regulatory mechanisms through which matrix metalloproteinase-9 expression affects cholangiocarcinoma development remain unclear. In the current study, we examined the potential role of excretory-secretory products in regulating the migration and invasion of various cholangiocarcinoma cell lines. We demonstrated that excretory-secretory products significantly induced matrix metalloproteinase-9 expression and activity in a concentration-dependent manner. Reporter gene and chromatin immunoprecipitation assays showed that excretory-secretory products induced matrix metalloproteinase-9 expression by enhancing the activity of nuclear factor-kappa B. Moreover, excretory-secretory products induced the degradation and phosphorylation of IκBα and stimulated nuclear factor-kappa B p65 nuclear translocation, which was regulated by extracellular signal-regulated kinase 1/2. Taken together, our findings indicated that the excretory-secretory product-dependent enhancement of matrix metalloproteinase-9 activity and subsequent induction of IκBα and nuclear factor-kappa B activities may contribute to the progression of cholangiocarcinoma. Copyright © 2016 Australian Society for Parasitology. Published by Elsevier Ltd. All rights reserved.

Matrix-assisted relaxation in Fe(phen)2(NCS)2 spin-crossover microparticles, experimental and theoretical investigations

International Nuclear Information System (INIS)

Enachescu, Cristian; Stancu, Alexandru; Tanasa, Radu; Tissot, Antoine; Laisney, Jérôme; Boillot, Marie-Laure

2016-01-01

In this study, we present the influence of the embedding matrix on the relaxation of Fe(phen) 2 (NCS) 2 (phen = 1,10-phenanthroline) spin-transition microparticles as revealed by experiments and provide an explanation within the framework of an elastic model based on a Monte-Carlo method. Experiments show that the shape of the high-spin → low-spin relaxation curves is drastically changed when the particles are dispersed in glycerol. This effect was considered in the model by means of interactions between the microparticles and the matrix. A faster start of the relaxation for microparticles embedded in glycerol is due to an initial positive local pressure acting on the edge spin-crossover molecules from the matrix side. This local pressure diminishes and eventually becomes negative during relaxation, as an effect of the decrease of the volume of spin-crossover microparticles from high-spin to low-spin.

Universality in random matrix theory and chiral symmetry breaking in QCD

International Nuclear Information System (INIS)

Akemann, G.

2000-05-01

In this work we review the topic of random matrix model universality with particular stress on its application to the study of chiral symmetry breaking in QCD. We highlight the role of microscopic and macroscopic matrix model correlation functions played in the description of the deep infrared eigenvalue spectrum of the Dirac operator. The universal microscopic correlation functions are presented for all three chiral symmetry breaking patterns, and the corresponding random matrix universality proofs are given for massless and massive fermions in a unified way. These analytic results have been widely confirmed from QCD lattice data and we present a comparison with the most recent analytic calculations describing data for dynamical SU(2) staggered fermions. The microscopic matrix model results are then re-expressed in terms of the finite-volume partition functions of Leutwyler and Smilga, where some of these expressions have been recently obtained using field theory only. The macroscopic random matrix universality is reviewed for the most simplest examples of bosonic and supersymmetric models. We also give an example for a non-universal deformation of a random matrix model - the restricted trace ensemble. (orig.)

Surface Passivation of MoO3 Nanorods by Atomic Layer Deposition Towards High Rate Durable Li Ion Battery Anodes

KAUST Repository

Ahmed, Bilal; Shahid, Muhammad; Nagaraju, Doddahalli H.; Anjum, Dalaver H.; Hedhili, Mohamed N.; Alshareef, Husam N.

2015-01-01

We demonstrate an effective strategy to overcome the degradation of MoO3 nanorod anodes in Lithium (Li) ion batteries at high rate cycling. This is achieved by conformal nanoscale surface passivation of the MoO3 nanorods by HfO2 using atomic layer deposition (ALD). At high current density such as 1500 mA/g, the specific capacity of HfO2 coated MoO3 electrodes is 68% higher than bare MoO3 electrodes after 50 charge/discharge cycles. After 50 charge/discharge cycles, HfO2 coated MoO3 electrodes exhibited specific capacity of 657 mAh/g, on the other hand, bare MoO3 showed only 460 mAh/g. Furthermore, we observed that HfO2 coated MoO3 electrodes tend to stabilize faster than bare MoO3 electrodes because nanoscale HfO2 layer prevents structural degradation of MoO3 nanorods. Additionally, the growth temperature of MoO3 nanorods and the effect of HfO2 layer thickness was studied and found to be important parameters for optimum battery performance. The growth temperature defines the microstructural features and HfO2 layer thickness defines the diffusion coefficient of Li–ions through the passivation layer to the active material. Furthermore, ex–situ HRTEM, X–ray photoelectron spectroscopy (XPS), Raman spectroscopy and X–ray diffraction was carried out to explain the capacity retention mechanism after HfO2 coating.

Surface Passivation of MoO3 Nanorods by Atomic Layer Deposition Towards High Rate Durable Li Ion Battery Anodes

KAUST Repository

Ahmed, Bilal

2015-06-03

We demonstrate an effective strategy to overcome the degradation of MoO3 nanorod anodes in Lithium (Li) ion batteries at high rate cycling. This is achieved by conformal nanoscale surface passivation of the MoO3 nanorods by HfO2 using atomic layer deposition (ALD). At high current density such as 1500 mA/g, the specific capacity of HfO2 coated MoO3 electrodes is 68% higher than bare MoO3 electrodes after 50 charge/discharge cycles. After 50 charge/discharge cycles, HfO2 coated MoO3 electrodes exhibited specific capacity of 657 mAh/g, on the other hand, bare MoO3 showed only 460 mAh/g. Furthermore, we observed that HfO2 coated MoO3 electrodes tend to stabilize faster than bare MoO3 electrodes because nanoscale HfO2 layer prevents structural degradation of MoO3 nanorods. Additionally, the growth temperature of MoO3 nanorods and the effect of HfO2 layer thickness was studied and found to be important parameters for optimum battery performance. The growth temperature defines the microstructural features and HfO2 layer thickness defines the diffusion coefficient of Li–ions through the passivation layer to the active material. Furthermore, ex–situ HRTEM, X–ray photoelectron spectroscopy (XPS), Raman spectroscopy and X–ray diffraction was carried out to explain the capacity retention mechanism after HfO2 coating.

Game Analysis, Validation, and Potential Application of EyeToy Play and Play 2 to Upper-Extremity Rehabilitation

Directory of Open Access Journals (Sweden)

Yu-ping Chen

2014-01-01

Full Text Available Objective. To describe and analyze the potential use of games in the commercially available EyeToy Play and EyeToy Play 2 on required/targeted training skills and feedback provided for clinical application. Methods. A summary table including all games was created. Two movement experts naïve to the software validated required/targeted training skills and feedback for 10 randomly selected games. Ten healthy school-aged children played to further validate the required/targeted training skills. Results. All but two (muscular and cardiovascular endurance had excellent agreement in required/targeted training skills, and there was 100% agreement on feedback. Children’s performance in required/targeted training skills (number of unilateral reaches and bilateral reaches, speed, muscular endurance, and cardiovascular endurance significantly differed between games (P<.05. Conclusion. EyeToy Play games could be used to train children’s arm function. However, a careful evaluation of the games is needed since performance might not be consistent between players and therapists’ interpretation.

N=2 Minimal Conformal Field Theories and Matrix Bifactorisations of x d

Science.gov (United States)

Davydov, Alexei; Camacho, Ana Ros; Runkel, Ingo

2018-01-01

We establish an action of the representations of N = 2-superconformal symmetry on the category of matrix factorisations of the potentials x d and x d - y d , for d odd. More precisely we prove a tensor equivalence between (a) the category of Neveu-Schwarz-type representations of the N = 2 minimal super vertex operator algebra at central charge 3-6/d, and (b) a full subcategory of graded matrix factorisations of the potential x d - y d . The subcategory in (b) is given by permutation-type matrix factorisations with consecutive index sets. The physical motivation for this result is the Landau-Ginzburg/conformal field theory correspondence, where it amounts to the equivalence of a subset of defects on both sides of the correspondence. Our work builds on results by Brunner and Roggenkamp [BR], where an isomorphism of fusion rules was established.

On the role of H2 as an inhibitor of UO2 matrix dissolution

International Nuclear Information System (INIS)

Merino, Juan; Gaona, Xavier; Duro, Lara; Bruno, Jordi; Martinez-Esparza, Aurora

2007-01-01

The study of spent fuel behaviour under disposal conditions is usually based on conservative approaches assuming oxidising conditions produced by water radiolysis at the fuel/water interface. However, the presence of H 2 from container corrosion can inhibit the dissolution of the UO 2 matrix and enhance its long-term stability. Several studies have confirmed the decrease in dissolution rates when H 2 is present in the system, although the exact mechanisms of interaction have not been fully established. This paper deals with a radiolytic modelling exercise to explore the consequences of the interaction of H 2 with radicals generated by radiolysis in the homogeneous phase. The main conclusion is that in all the modelled cases the presence of H 2 in the system leads to a decrease in matrix dissolution. The extent of the inhibition, and the threshold partial pressure for the inhibition to take place, both depend in a complex way on the chemical composition of the water and the type of radiation present in the system. (authors)

Human macrophages primed with angiogenic factors show dynamic plasticity, irrespective of extracellular matrix components

NARCIS (Netherlands)

Ploeger, Diana T. A.; van Putten, Sander M.; Koerts, Jasper A.; van Luyn, Marja J. A.; Harmsen, Martin C.

Macrophages are important in inflammation as well as in tissue repair processes. They can be activated by various stimuli and classified into two major groups: M1 (classically activated) or M2 (alternatively activated). Inflammation, angiogenesis and matrix remodeling play a major role in tissue

Modeling the Monotonic and Cyclic Tensile Stress-Strain Behavior of 2D and 2.5D Woven C/SiC Ceramic-Matrix Composites

Science.gov (United States)

Li, L. B.

2018-05-01

The deformation of 2D and 2.5 C/SiC woven ceramic-matrix composites (CMCs) in monotonic and cyclic loadings has been investigated. Statistical matrix multicracking and fiber failure models and the fracture mechanics interface debonding approach are used to determine the spacing of matrix cracks, the debonded length of interface, and the fraction of broken fibers. The effects of fiber volume fraction and fiber Weibull modulus on the damage evolution in the composites and on their tensile stress-strain curves are analyzed. When matrix multicracking and fiber/matrix interface debonding occur, the fiber slippage relative to the matrix in the debonded interface region of the 0° warp yarns is the main reason for the emergance of stress-strain hysteresis loops for 2D and 2.5D woven CMCs. A model of these loops is developed, and histeresis loops for the composites in cyclic loadings/unloadings are predicted.

Spent fuel UO2 matrix corrosion behaviour studies through alpha-doped UO2 pellets leaching

International Nuclear Information System (INIS)

Muzeau, B.; Jegou, C.; Broudic, V.

2005-01-01

Full text of publication follows: The option of direct disposal of spent nuclear fuel in a deep geological formation raises the need to investigate the long-term behaviour of the UO 2 matrix in aqueous media subjected to α-β-γ radiations. The β-γ emitters account for the most of the activity of spent fuel at the moment it is removed from the reactor, but diminish within a millennial time frame by over three orders of magnitude to less than the long-term activity. The latter persist over much longer time periods and must therefore be taken into account over geological disposal scale. In the present investigation the UO 2 matrix corrosion under alpha radiation is studied as a function of different parameters such as: the alpha activity, the carbonates and hydrogen concentrations,.. In order to study the effect of alpha radiolysis of water on the UO 2 matrix, 238/239 Pu doped UO 2 pellets (0.22 %wt. Pu total) were fabricated with different 238 Pu/ 239 Pu ratio to reproduce the alpha activity of a 47 GWd.t HMi -1 UOX spent fuel at different milestones in time (15, 50, 1500, 10000 and 40000 years). Undoped UO 2 pellets were also available as reference sample. Leaching experiments were conducted in deionized or carbonated water (NaHCO 3 1 mM), under Argon (O 2 2 30% gas mixture. Previous experiments conducted in deionized water under argon atmosphere, have shown a good correlation between alpha activity and uranium release for the 15-, 1500- and 40000-years alpha doped UO 2 batches. Besides, uranium release in the leachate is controlled either by the kinetics, or by the thermodynamics. Provided the solubility limit of uranium is not achieved, uranium concentration increases and is only limited by the kinetics, unless precipitation occurs and the uranium concentration remains constant over time. These controls are highly dependant on the solution chemistry (HCO 3 - , pH, Eh,..), the atmosphere (Ar, Ar/H 2 ,..), and the radiolysis strength. The experimental matrix

Effect of All-Trans Retinoic Acid (ATRA against expression of Matrix Metalloproteinase-2 (MMP-2 in model mice (Rattus norvegicus periodontitis

Directory of Open Access Journals (Sweden)

Ilma Soraya

2017-08-01

Full Text Available Introduction: Periodontitis is a condition of inflammation of the tooth supporting tissues generally caused by bacteria Phorphyromonas gingivalis (Pg. and is usually characterized by the occurrence of the alveolar bone resorption. Matrix metalloproteinase-2 (MMP-2 is an enzyme that plays an important role in inflammatory conditions. All-trans retinoic acid (ATRA is a metabolite of vitamin A which plays a role in healing the inflamed tissue and maintain the immune system. The purpose of this study was to determine the effect of ATRA on the expression of MMP-2 in mouse models Rattus norvegicus of periodontitis. Methods: Experimental laboratory by using post test only with control group design. This study used 25 male Wistar mice (Rattus norvegicus that divided into 5 groups. Group 1 (G1 is a group of healthy mice, group 2 (G2 is a group of sick mice as induced periodontitis without treatment, group 3 (G3 is a group of periodontitis mice treated with 5 mg/kg dose of ATRA, group 4 (G4 is a group of periodontitis mice treated with 10 mg/kg dose of ATRA, group 5 (G5 is a group of periodontitis mice treated with 20 mg/kg dose of ATRA. Periodontitis induction was induced by Pg. bacteria every 3 days for 28 days and followed by administration of ATRA for 7 days. Expression of MMP-2 from gingival tissues and periodontal ligament was obtained by immunohistochemical methods. Results were analyzed using the Shapiro-Wilk Test and Mann-Whitney Test. Results: The results showed there were significant differences in the positive area of MMP-2 and MMP-2 color intensity (p < 0.05 between groups. Conclusion: ATRA dose of 20 mg/kg is the most effective dose in inhibiting the expression of MMP-2 in mice models of periodontitis when compared with the dose on other groups.

Relation between the 2{nu}{beta}{beta} and 0{nu}{beta}{beta} nuclear matrix elements

Energy Technology Data Exchange (ETDEWEB)

Vogel, Petr [Kellogg Radiation Laboratory, Caltech, Pasadena, CA 91125 (United States); Simkovic, Fedor [Department of Nuclear Physics and Biophysics, Comenius University, Mlynska dolina F1, SK-84248 Bratislava (Slovakia)

2011-12-16

A formal relation between the GT part of the nuclear matrix elements M{sub GT}{sup 0{nu}} of 0{nu}{beta}{beta} decay and the closure matrix elements M{sub cl}{sup 2{nu}} of 2{nu}{beta}{beta} decay is established. This relation is based on the integral representation of these quantities in terms of their dependence on the distance r between the two nucleons undergoing transformation. We also discuss the difficulties in determining the correct values of the closure 2{nu}{beta}{beta} decay matrix elements.

Oral Alimentation in Neonatal and Adult Populations Requiring High-Flow Oxygen via Nasal Cannula.

Science.gov (United States)

Leder, Steven B; Siner, Jonathan M; Bizzarro, Matthew J; McGinley, Brian M; Lefton-Greif, Maureen A

2016-04-01

Use of high-flow oxygen via nasal cannula (HFO2-NC) is increasingly common in intensive care unit (ICU) settings. Despite the critical interface between respiration and swallowing, and the high acuity of patients in ICUs, the impact of HFO2-NC on feeding and swallowing is unknown. The present prospective, single-center, cohort study investigated the impact of HFO2-NC use on oral alimentation in neonatal and adult ICU patients. Oral alimentation status was evaluated in 100 consecutive ICU inpatients (50 neonatal and 50 adult) requiring HFO2-NC. Participant characteristics, respiratory support, successful initiation of oral feeding in neonates, and successful resumption of oral feeding in adults were recorded. Seventeen of 50 (34 %) neonates requiring HFO2-NC were deemed developmentally and medically appropriate by the neonatologist and nursing to begin oral alimentation. All 17 (100 %) were successful with initiation of oral feedings. Thirty-three of 50 (66 %) continued nil per os due to prematurity or medical conditions precluding oral alimentation at time of data collection. Thirty-nine of 50 (78 %) adults requiring HFO2-NC were deemed medically appropriate by the intensivist and nursing to resume oral alimentation (n = 34) or with a functional swallow without aspiration on FEES (n = 5). All 39 (100 %) resumed oral alimentation successfully. Eleven of 50 (22 %) continued nil per os due to severe respiratory issues precluding both swallow testing and oral alimentation at time of data collection. All developmentally and medically appropriate neonatal and adult patients requiring HFO2-NC were successful with either the introduction or resumption of oral alimentation. Patients requiring HFO2-NC who are identified as having feeding or swallowing issues should be referred for swallowing evaluations using the same criteria as patients who do not require HFO2-NC, as it is not the use of HFO2-NC but rather patient-specific determinants of feeding and swallowing

Tetrahedron equations and the relativistic S-matrix of straight-strings in 2+1-dimensions

International Nuclear Information System (INIS)

Zamolodchikov, A.B.

1981-01-01

The quantum S-matrix theory of straight-strings (infinite one-dimensioanl objects like straight domain walls) in 2 + 1-dimensions is considered. The S-matrix is supposed to be purely elastic and factorized. The tetrahedron equations (which are the factorization conditions) are investigated for the special two-colour model. The relativistic three-string S-matrix, which apparently satisfies this tetrahedron equation, is proposed. (orig.)

Transmission electron microscopy assessment of conductive-filament formation in Ni-HfO2-Si resistive-switching operational devices

Science.gov (United States)

Martín, Gemma; González, Mireia B.; Campabadal, Francesca; Peiró, Francesca; Cornet, Albert; Estradé, Sònia

2018-01-01

Resistive random-access memory (ReRAM) devices are currently the object of extensive research to replace flash non-volatile memory. However, elucidation of the conductive-filament formation mechanisms in ReRAM devices at nanoscale is mandatory. In this study, the different states created under real operation conditions of HfO2-based ReRAM devices are characterized through transmission electron microscopy and electron energy-loss spectroscopy. The physical mechanism behind the conductive-filament formation in Ni/HfO2/Si ReRAM devices based on the diffusion of Ni from the electrode to the Si substrate and of Si from the substrate to the electrode through the HfO2 layer is demonstrated.

Extracellular matrix and tissue engineering applications

NARCIS (Netherlands)

Fernandes, H.A.M.; Moroni, Lorenzo; van Blitterswijk, Clemens; de Boer, Jan

2009-01-01

The extracellular matrix is a key component during regeneration and maintenance of tissues and organs, and it therefore plays a critical role in successful tissue engineering as well. Tissue engineers should recognise that engineering technology can be deduced from natural repair processes. Due to

Periodontal Disease, Matrix Metalloproteinases and Chemically Modified Tetracyclines

OpenAIRE

Steinsvoll, Svein

2011-01-01

Matrix metalloproteinases (MMPs) are crucial in the degradation of the main components in the extracellular matrix and thereby play important roles in cell migration, wound healing and tissue remodelling. MMPs have pathogenic roles in arthritis, periodontitis, hepatitis, glomerulonephritis, atherosclerosis and cancer cell invasion. MMPs are activators of pro-inflammatory mediators that occur in latent forms, such as interleukin (IL)-1β, membrane-bound tumour necrosis factor (TNF) and dif...

Resonance dielectric dispersion of TEA-CoCl2Br2 nanocrystals incorporated into the PMMA matrix

Science.gov (United States)

Kapustianyk, V.; Shchur, Ya; Kityk, I.; Rudyk, V.; Lach, G.; Laskowski, L.; Tkaczyk, S.; Swiatek, J.; Davydov, V.

2008-09-01

The dielectric properties of TEA-CoCl2Br2 nanocrystals incorporated into the polymethylmethacrylate matrix within the frequency range of 3 × 105-2.6 × 109 Hz in the temperature region of 90-300 K were investigated. The considerable difference in the dielectric spectra of the nanocomposite compared to those of the bulk crystal and the pure polymer matrix was observed. The dielectric dispersion of the composite material reveals a resonance type (resonance frequency was found to be near 1.3 GHz) and may be qualitatively explained as the result of piezoelectric resonance on the nanocrystals. The model interpretation of this phenomenon based on the forced-dumped oscillator is presented.

Open-lung protective ventilation with pressure control ventilation, high-frequency oscillation, and intratracheal pulmonary ventilation results in similar gas exchange, hemodynamics, and lung mechanics.

Science.gov (United States)

Sedeek, Khaled A; Takeuchi, Muneyuki; Suchodolski, Klaudiusz; Vargas, Sara O; Shimaoka, Motomu; Schnitzer, Jay J; Kacmarek, Robert M

2003-11-01

Pressure control ventilation (PCV), high-frequency oscillation (HFO), and intratracheal pulmonary ventilation (ITPV) may all be used to provide lung protective ventilation in acute respiratory distress syndrome, but the specific approach that is optimal remains controversial. Saline lavage was used to produce acute respiratory distress syndrome in 21 sheep randomly assigned to receive PCV, HFO, or ITPV as follows: positive end-expiratory pressure (PCV and ITPV) and mean airway pressure (HFO) were set in a pressure-decreasing manner after lung recruitment that achieved a ratio of Pao2/Fio2 > 400 mmHg. Respiratory rates were 30 breaths/min, 120 breaths/min, and 8 Hz, respectively, for PCV, ITPV, and HFO. Eucapnia was targeted with peak carinal pressure of no more than 35 cm H2O. Animals were then ventilated for 4 h. There were no differences among groups in gas exchange, lung mechanics, or hemodynamics. Tidal volume (PCV, 8.9 +/- 2.1 ml/kg; ITPV, 2.7 +/- 0.8 ml/kg; HFO, approximately 2.0 ml/kg) and peak carinal pressure (PCV, 30.6 +/- 2.6 cm H2O; ITPV, 22.3 +/- 4.8 cm H2O; HFO, approximately 24.3 cm H2O) were higher in PCV. Pilot histologic data showed greater interstitial hemorrhage and alveolar septal expansion in PCV than in HFO or ITPV. These data indicate that HFO, ITPV, and PCV when applied with an open-lung protective ventilatory strategy results in the same gas exchange, lung mechanics, and hemodynamic response, but pilot data indicate that lung injury may be greater with PCV.

Environmental Barrier Coatings for Turbine Engines: A Design and Performance Perspective

Science.gov (United States)

Zhu, Dongming; Fox, Dennis S.; Ghosn, Louis; Smialek, James L.; Miller, Robert A.

2009-01-01

Ceramic thermal and environmental barrier coatings (TEBC) for SiC-based ceramics will play an increasingly important role in future gas turbine engines because of their ability to effectively protect the engine components and further raise engine temperatures. However, the coating long-term durability remains a major concern with the ever-increasing temperature, strength and stability requirements in engine high heat-flux combustion environments, especially for highly-loaded rotating turbine components. Advanced TEBC systems, including nano-composite based HfO2-aluminosilicate and rare earth silicate coatings are being developed and tested for higher temperature capable SiC/SiC ceramic matrix composite (CMC) turbine blade applications. This paper will emphasize coating composite and multilayer design approach and the resulting performance and durability in simulated engine high heat-flux, high stress and high pressure combustion environments. The advances in the environmental barrier coating development showed promise for future rotating CMC blade applications.

Expression of matrix metalloproteinase-2 and tissue inhibitor of metalloproteinase-2 in radiation exposed small intestinal mucosa of the rat

International Nuclear Information System (INIS)

Kwag, Hyon Joo; Lee, Kyoung Ja; Rhee, Chung Sik

2003-01-01

The matrix metalloproteinases (MMPs) are a family of enzymes whose main function is the degradation of the extracellular matrix. Several studies have revealed that MMPs and TIMPs are related to the wound healing process and in photoaging caused by ultraviolet irradiation. However, the expressions of MMP and TIMP after irradiation have not, to the best of our knowledge, been studied. This study investigates the expressions of MMP-2 and TIMP-2 in rat intestinal mucosa following irradiation. The entire abdomen of Sprague-Dawley rats was irradiated using a single dose method. The rats were sacrificed on day 1, 2, 3, 5, 7 and 14 following irradiation. Histopathological observations were made using hematoxilin and eosin staining. The expressions of MMP-2 and TIMP-2 were examined using immunohistochemistry, immunoblotting and ELISA. Radiation induced damage, associated with atrophic villi, and infiltration of inflammatory cells was observed from the first postirradiation day, and severe tissue damage was observed on the second and the third postirradiation days. An increase in mitosis and the number of regenerating crypts, as evidence of regeneration, were most noticeable on the fifth postirradiation day. From the immunohistochemistry, the MMP-2 expression was observed from the first postirradiation day, but was most conspicuous on the third and the fifth postirradiation days. The TIMP-2 expression was most conspicuous on the fifth postirradiation day. From the immunoblotting, the MMP-2 expression was strongly positive on the third postirradiation day, and that of TIMP-2 showed a strong positive response on the fifth postirradiation day. In ELISA, tests, the expressions of MMP-2 and TIMP-2. were increased in the postirradiation groups compared to those of the normal controls, and showed a maximum increase on the fifth postirradiation day. These results were statistically significant. The expressions of MMP-2 and TIMP-2 were increased in the intestinal mucosa of the rats

Recent advances on mixed matrix membranes for CO2 separation

Institute of Scientific and Technical Information of China (English)

Ming Wang; Zhi Wang; Song Zhao; Jixiao Wang; Shichang Wang

2017-01-01

Recent advances on mixed matrix membrane for CO2 separation are reviewed in this paper. To improve CO2 separation performance of polymer membranes, mixedmatrixmembranes (MMMs) are developed. The concept of MMM is illustrated distinctly. Suitable polymer and inorganic or organic fillers for MMMs are summarized.Possible interface morphologies between polymer and filler, and the effect of interface morphologies on gas transport properties of MMMs are summarized. The methods to improve compatibility between polymer and filler are introduced. There are eightmethods including silane coupling, Grignard treatment, incorporation of additive,grafting, in situ polymerization, polydopamine coating, particle fusion approach and polymer functionalization. To achieve higher productivity for industrial application,mixed matrix composite membranes are developed. The recent development on hollow fiber and flat mixedmatrix composite membrane is reviewed in detail. Last, the future trend of MMM is forecasted.

Asymptotic Bethe ansatz S-matrix and Landau-Lifshitz-type effective 2d actions

International Nuclear Information System (INIS)

Roiban, R; Tirziu, A; Tseytlin, A A

2006-01-01

Motivated by the desire to relate Bethe ansatz equations for anomalous dimensions found on the gauge-theory side of the AdS/CFT correspondence to superstring theory on AdS 5 x S 5 we explore a connection between the asymptotic S-matrix that enters the Bethe ansatz and an effective two-dimensional quantum field theory. The latter generalizes the standard 'non-relativistic' Landau-Lifshitz (LL) model describing low-energy modes of ferromagnetic Heisenberg spin chain and should be related to a limit of superstring effective action. We find the exact form of the quartic interaction terms in the generalized LL-type action whose quantum S-matrix matches the low-energy limit of the asymptotic S-matrix of the spin chain of Beisert, Dippel and Staudacher (BDS). This generalizes to all orders in the 't Hooft coupling λ an earlier computation of Klose and Zarembo of the S-matrix of the standard LL model. We also consider a generalization to the case when the spin-chain S-matrix contains an extra 'string' phase and determine the exact form of the LL 4-vertex corresponding to the low-energy limit of the ansatz of Arutyunov, Frolov and Staudacher (AFS). We explain the relation between the resulting 'non-relativistic' non-local action and the second-derivative string sigma model. We comment on modifications introduced by strong-coupling corrections to the AFS phase. We mostly discuss the SU(2) sector but also present generalizations to the SL(2) and SU(1|1) sectors, confirming universality of the dressing phase contribution by matching the low-energy limit of the AFS-type spin-chain S-matrix with tree-level string-theory S-matrix

Complete S-matrix of the O(2N) Gross-Neveu model

International Nuclear Information System (INIS)

Karowski, M.; Thun, H.J.

1980-11-01

We present the complete S-matrix of the O(2N) Gross-Neveu model including kinks, elementary fermions, and higher bound states. In addition to the S-matrix factorization, unitarity, and crossing conditions we make essential use of constraints which follow from the fact that particles in the spectrum are bound states of each other. A consistent solution can only be obtained if the kinks obey generalized statistics. Remarkably, some quantities related to this such as 'spins' and Klein factors show Bott periodicity. (orig.)

CELLULAR CONTROL OF CONNECTIVE TISSUE MATRIX TENSION†

Science.gov (United States)

Langevin, Helene M.; Nedergaard, Maiken; Howe, Alan

2013-01-01

The biomechanical behavior of connective tissue in response to stretching is generally attributed to the molecular composition and organization of its extracellular matrix. It also is becoming apparent that fibroblasts play an active role in regulating connective tissue tension. In response to static stretching of the tissue, fibroblasts expand within minutes by actively remodeling their cytoskeleton. This dynamic change in fibroblast shape contributes to the drop in tissue tension that occurs during viscoelastic relaxation. We propose that this response of fibroblasts plays a role in regulating extracellular fluid flow into the tissue, and protects against swelling when the matrix is stretched. This article reviews the evidence supporting possible mechanisms underlying this response including autocrine purinergic signaling. We also discuss fibroblast regulation of connective tissue tension with respect to lymphatic flow, immune function and cancer. PMID:23444198

Cellular control of connective tissue matrix tension.

Science.gov (United States)

Langevin, Helene M; Nedergaard, Maiken; Howe, Alan K

2013-08-01

The biomechanical behavior of connective tissue in response to stretching is generally attributed to the molecular composition and organization of its extracellular matrix. It also is becoming apparent that fibroblasts play an active role in regulating connective tissue tension. In response to static stretching of the tissue, fibroblasts expand within minutes by actively remodeling their cytoskeleton. This dynamic change in fibroblast shape contributes to the drop in tissue tension that occurs during viscoelastic relaxation. We propose that this response of fibroblasts plays a role in regulating extracellular fluid flow into the tissue, and protects against swelling when the matrix is stretched. This article reviews the evidence supporting possible mechanisms underlying this response including autocrine purinergic signaling. We also discuss fibroblast regulation of connective tissue tension with respect to lymphatic flow, immune function, and cancer. Copyright © 2013 Wiley Periodicals, Inc.

Epigallocatechin-3-gallate ameliorates intrahepatic cholestasis of pregnancy by inhibiting matrix metalloproteinase-2 and matrix metalloproteinase-9.

Science.gov (United States)

Zhang, Mei; Xu, Meimei

2017-10-01

Matrix metalloproteinase (MMP)-2 and matrix metalloproteinase-9 are involved in many illnesses affecting pregnant women, including intrahepatic cholestasis of pregnancy (ICP), a serious liver abnormality during pregnancy. Epigallocatechin-3-gallate (EGCG) has been widely reported to inhibit activities of MMP-2 and MMP-9. We aimed to investigate the role of EGCG in ameliorating ICP symptoms in a rat model. Using 17α-ethinylestradiol to induce ICP in pregnant rats, we investigated the efficacy of EGCG administration on ICP symptoms, including bile flow rate, total bile acids (TBA) and MMP-2 and MMP-9 activities. Correlation study was conducted among levels of the two MMPs with other ICP symptoms. In ICP rats, activities of both MMP-2 and MMP-9 were significantly elevated. EGCG administration could inhibit the upregulation of MMP-2 and MMP-9 post-transcriptionally. Furthermore, EGCG ameliorated ICP symptoms, as evidenced by restored bile flow rate and TBA, showing efficient treatment outcomes. At last, levels of TBA and the two MMPs were found to be strongly correlated. Our study demonstrates that, for the first time, the efficacy of EGCG in ameliorating ICP symptoms by inhibiting both MMP-2 and MMP-9, which supports its potential as a novel drug in ameliorating ICP. © 2017 Société Française de Pharmacologie et de Thérapeutique.

Comparison of Nintendo Wii and PlayStation2 for enhancing laparoscopic skills.

Science.gov (United States)

Ju, Rujin; Chang, Peter L; Buckley, Adam P; Wang, Karen C

2012-01-01

The increase in laparoscopic surgery has led to a growing need to train residents in this skill. Virtual reality simulators and box trainers have been used as educational tools outside of the operating room, but both approaches have advantages and disadvantages. Video games have been an area of interest in the search for other modalities to train residents. Experience with the traditional single controller unit video games have been correlated with better surgical skill acquisition. In 2006, Nintendo introduced the Wii, a novel gaming modality that mimics movements in laparoscopy better than traditional games do. Our objective was to compare the Nintendo Wii and PlayStation2 for enhancing laparoscopy skills. The study included stratified randomization of 23 less experienced ( 12 laparoscopy cases per year) and 19 more experienced ( 12 per year) physicians, residents, and medical students to 30 min of Wii versus PlayStation2 in a university-affiliated hospital Department of Obstetrics and Gynecology. Pre- and posttest bead transfer and suturing scores were obtained. Baseline characteristics were similar for both video game groups. Participants assigned to Wii and PlayStation2 both demonstrated significant improvement in bead transfer. Neither Wii nor PlayStation2 participants improved in suturing scores. The Wii group improved more in bead transfer scores when compared to the PlayStation2 group (60 points vs. 40 points, respectively), but this difference was not statistically significant. Both Wii and PlayStation2 significantly improved laparoscopic skills in bead transfer. These video games may be inexpensive alternatives to laparoscopy training simulators.

Development and characterization of polyethersulfone/TiO2 mixed matrix membranes for CO2/CH4 separation

Science.gov (United States)

Galaleldin, S.; Mannan, H. A.; Mukhtar, H.

2017-12-01

In this study, mixed matrix membranes comprised of polyethersulfone as the bulk polymer phase and titanium dioxide (TiO2) nanoparticles as the inorganic discontinuous phase were prepared for CO2/CH4 separation. Membranes were synthesized at filler loading of 0, 5, 10 and 15 wt % via dry phase inversion method. Morphology, chemical bonding and thermal characteristics of membranes were scrutinized utilizing different techniques, namely: Field Emission Scanning Electron Microscopy (FESEM), Fourier Transform InfraRed (FTIR) spectra and Thermogravimetric analysis (TGA) respectively. Membranes gas separation performance was evaluated for CO2 and CH4 gases at 4 bar feed pressure. The highest separation performance was achieved by mixed matrix membrane (MMM) at 5 % loading of TiO2.

Regulation of pituitary hormones and cell proliferation by components of the extracellular matrix

Directory of Open Access Journals (Sweden)

M. Paez-Pereda

2005-10-01

Full Text Available The extracellular matrix is a three-dimensional network of proteins, glycosaminoglycans and other macromolecules. It has a structural support function as well as a role in cell adhesion, migration, proliferation, differentiation, and survival. The extracellular matrix conveys signals through membrane receptors called integrins and plays an important role in pituitary physiology and tumorigenesis. There is a differential expression of extracellular matrix components and integrins during the pituitary development in the embryo and during tumorigenesis in the adult. Different extracellular matrix components regulate adrenocorticotropin at the level of the proopiomelanocortin gene transcription. The extracellular matrix also controls the proliferation of adrenocorticotropin-secreting tumor cells. On the other hand, laminin regulates the production of prolactin. Laminin has a dynamic pattern of expression during prolactinoma development with lower levels in the early pituitary hyperplasia and a strong reduction in fully grown prolactinomas. Therefore, the expression of extracellular matrix components plays a role in pituitary tumorigenesis. On the other hand, the remodeling of the extracellular matrix affects pituitary cell proliferation. Matrix metalloproteinase activity is very high in all types of human pituitary adenomas. Matrix metalloproteinase secreted by pituitary cells can release growth factors from the extracellular matrix that, in turn, control pituitary cell proliferation and hormone secretion. In summary, the differential expression of extracellular matrix components, integrins and matrix metalloproteinase contributes to the control of pituitary hormone production and cell proliferation during tumorigenesis.

High reflectivity YDH/SiO2 distributed Bragg reflector for UV-C wavelength regime

KAUST Repository

Alias, Mohd Sharizal; Alatawi, Abdullah; Wong, Ka Chun; Tangi, Malleswararao; Holguin Lerma, Jorge Alberto; Stegenburgs, Edgars; Shakfa, Mohammad Khaled; Ng, Tien Khee; Rahman, Abdul; Alyamani, Ahmed; Ooi, Boon S.

2018-01-01

A distributed Bragg reflector (DBR) composed of Y2O3-doped HfO2 (YDH)/SiO2 layers with high reflectivity spectrum centered at a wavelength of ~240 nm is deposited using radio-frequency magnetron sputtering. Before the DBR deposition, optical

Higher Capacity, Improved Conductive Matrix VB2/Air Batteries (Postprint)

Science.gov (United States)

2016-02-18

gravimetric capacity five-fold higher than the 2 e− oxidation of the widely used zinc alkaline anode. One challenge to the implementation of VB2/air...VB2 has an intrinsic gravimetric capacity five fold higher than the 2 e− oxidation of the widely used zinc alkaline anode. One challenge to the...to ameliorate this effect through advanced anode configurations with an improved conductive matrix. Materials and Methods Anodes were prepared using

Surface morphology of thin lysozyme films produced by matrix-assisted pulsed laser evaporation (MAPLE)

DEFF Research Database (Denmark)

Purice, Andreea; Schou, Jørgen; Pryds, Nini

2007-01-01

Thin films of the protein, lysozyme, have been deposited by the matrix-assisted pulsed laser evaporation (MAPLE) technique. Frozen targets of 0.3-1.0 wt.% lysozyme dissolved in ultrapure water were irradiated by laser light at 355 mn with a fluence of 2 J/cm(2). The surface quality of the thin....... The concentration of lysozyme in the ice matrix apparently does not play any significant role for the morphology of the film. The morphology obtained with MAPLE has been compared with results for direct laser irradiation of a pressed lysozyme sample (i.e. pulsed laser deposition (PLD)). (C) 2007 Elsevier B.V. All...

Pragmatic evaluation of the Go2Play Active Play intervention on physical activity and fundamental movement skills in children.

Science.gov (United States)

Johnstone, Avril; Hughes, Adrienne R; Janssen, Xanne; Reilly, John J

2017-09-01

Active play is a novel approach to addressing low physical activity levels and fundamental movement skills (FMS) in children. This study aimed to determine if a new school-based, 'Go2Play Active Play' intervention improved school day physical activity and FMS. This was a pragmatic evaluation conducted in Scotland during 2015-16. Participants ( n  = 172; mean age = 7 years) were recruited from seven primary schools taking part in the 5-month intervention, plus 24 participants not receiving the intervention were recruited to act as a comparison group.189 participants had physical activity measured using an Actigraph GT3X accelerometer at baseline and again at follow-up 5 months later. A sub-sample of participants from the intervention ( n  = 102) and comparison ( n  = 21) groups had their FMS assessed using the Test of Gross Motor Development (TGMD-2) at baseline and follow-up. Changes in school day physical activity and FMS variables were examined using repeated measures ANOVA. The main effect was 'group' on 'time' from baseline to follow-up. Results indicated there was a significant interaction for mean counts per minute and percent time in sedentary behavior, light intensity physical activity and moderate to vigorous physical activity (MVPA) (all p  skills score and percentile (both p  = 0.02), but no significant interaction for object control skills score ( p  = 0.1) and percentile ( p  = 0.3). The Go2Play Active Play intervention may be a promising way of improving physical activity and FMS but this needs to be confirmed in an RCT.

THE NONLINEAR TRAJECTORY OF CHANGE IN PLAY PROFILES OF THREE CHILDREN IN PSYCHODYNAMIC PLAY THERAPY

Directory of Open Access Journals (Sweden)

Sibel Halfon

2016-10-01

Full Text Available Aim: Even though there is substantial evidence that play based therapies produce significant change, the specific play processes in treatment remain unexamined. For that purpose, processes of change in long-term psychodynamic play therapy are assessed through a repeated systematic assessment of three children’s Play Profiles, which reflect patterns of organization among play variables that contribute to play activity in therapy, indicative of the children’s coping strategies, and an expression of their internal world. The main aims of the study are to investigate the kinds of Play Profiles expressed in treatment, and to test whether there is emergence of new and more adaptive Play Profiles using dynamic systems theory as a methodological framework.Methods and Procedures: Each session from the long-term psychodynamic treatment (mean number of sessions = 55 of three 6 year old good outcome cases presenting with Separation Anxiety were recorded, transcribed and coded using items from the Children's Play Therapy Instrument, created to assess the play activity of children in psychotherapy, generating discrete and measurable units of play activity arranged along a continuum of four play profiles: Adaptive, Inhibited, Impulsive, and Disorganized. The play profiles were clustered through K-means Algorithm, generating 7 discrete states characterizing the course of treatment and the transitions between these states were analyzed by Markov Transition Matrix, Recurrence Quantification Analysis (RQA and odds ratios comparing the first and second halves of psychotherapy.Results: The Markov Transitions between the states scaled almost perfectly and also showed the ergodicity of the system meaning that the child can reach any state or shift to another one in play. The RQA and odds ratios showed two trends of change, first concerning the decrease in the use of less adaptive strategies, second regarding the reduction of play interruptions.Conclusions: The

The central role of vascular extracellular matrix and basement membrane remodeling in metabolic syndrome and type 2 diabetes: the matrix preloaded

Directory of Open Access Journals (Sweden)

Tyagi Suresh C

2005-06-01

Full Text Available Abstract The vascular endothelial basement membrane and extra cellular matrix is a compilation of different macromolecules organized by physical entanglements, opposing ionic charges, chemical covalent bonding, and cross-linking into a biomechanically active polymer. These matrices provide a gel-like form and scaffolding structure with regional tensile strength provided by collagens, elasticity by elastins, adhesiveness by structural glycoproteins, compressibility by proteoglycans – hyaluronans, and communicability by a family of integrins, which exchanges information between cells and between cells and the extracellular matrix of vascular tissues. Each component of the extracellular matrix and specifically the capillary basement membrane possesses unique structural properties and interactions with one another, which determine the separate and combined roles in the multiple diabetic complications or diabetic opathies. Metabolic syndrome, prediabetes, type 2 diabetes mellitus, and their parallel companion (atheroscleropathy are associated with multiple metabolic toxicities and chronic injurious stimuli. The adaptable quality of a matrix or form genetically preloaded with the necessary information to communicate and respond to an ever-changing environment, which supports the interstitium, capillary and arterial vessel wall is individually examined.

Not dead yet: the rise, fall and persistence of the BCG Matrix

OpenAIRE

Madsen, Dag Øivind

2017-01-01

The BCG Matrix was introduced almost 50 years ago, and is today considered one of the most iconic strategic planning techniques. Using management fashion theory as a theoretical lens, this paper examines the historical rise, fall and persistence of the BCG Matrix. The analysis highlights the role played by fashion-setting actors (e.g., consultants, business schools and business media) in the rise of the BCG Matrix. However, over time, portfolio planning models such as the BCG Matrix were atta...

Emissions from large-scale medium-speed diesel engines: 2. Influence of fuel type and operating mode

International Nuclear Information System (INIS)

Sarvi, Arto; Zevenhoven, Ron; Fogelholm, Carl-Johan

2008-01-01

This paper addresses gaseous emissions smoke (soot) and particulate matter in large-scale diesel engine exhaust. The test engine was a large-scale turbocharged, after-cooled mean speed (∝ 500 rpm) direct-injection diesel engine and the power per cylinder was about 1 MW. Emission measurements were carried out on burning heavy fuel (HFO) and light fuel (LFO) oils. The test modes for the investigation were a propulsion mode (marine application) and a generator mode (power plant application). Gaseous emissions were measured according to the IMO technical code, smoke (soot) emissions were determined optically and particulate matter (PM) was measured by gravimetric impactor designed for five size fractions. In comparison the emissions from HFO and LFO utilisations indicate slightly higher NO and CO emissions for HFO, while LFO gives clearly higher emissions of hydrocarbons (HC). Emissions of soot and CO appeared to correlate very well, being very high for both fuels throughout the propulsion mode and low load, otherwise being similar for both modes. PM emissions are more than three times higher with HFO than with LFO and appear to decrease with the load except for HFO during the generator mode where an increase of PM emissions with the load is seen. Some data on sampled particles is given. (author)

Matrix quantum mechanics on S1/Z2

Directory of Open Access Journals (Sweden)

P. Betzios

2018-03-01

Full Text Available We study Matrix Quantum Mechanics on the Euclidean time orbifold S1/Z2. Upon Wick rotation to Lorentzian time and taking the double-scaling limit this theory provides a toy model for a big-bang/big crunch universe in two dimensional non-critical string theory where the orbifold fixed points become cosmological singularities. We derive the MQM partition function both in the canonical and grand canonical ensemble in two different formulations and demonstrate agreement between them. We pinpoint the contribution of twisted states in both of these formulations either in terms of bi-local operators acting at the end-points of time or branch-cuts on the complex plane. We calculate, in the matrix model, the contribution of the twisted states to the torus level partition function explicitly and show that it precisely matches the world-sheet result, providing a non-trivial test of the proposed duality. Finally we discuss some interesting features of the partition function and the possibility of realising it as a τ-function of an integrable hierarchy.

Matrix quantum mechanics on S1 /Z2

Science.gov (United States)

Betzios, P.; Gürsoy, U.; Papadoulaki, O.

2018-03-01

We study Matrix Quantum Mechanics on the Euclidean time orbifold S1 /Z2. Upon Wick rotation to Lorentzian time and taking the double-scaling limit this theory provides a toy model for a big-bang/big crunch universe in two dimensional non-critical string theory where the orbifold fixed points become cosmological singularities. We derive the MQM partition function both in the canonical and grand canonical ensemble in two different formulations and demonstrate agreement between them. We pinpoint the contribution of twisted states in both of these formulations either in terms of bi-local operators acting at the end-points of time or branch-cuts on the complex plane. We calculate, in the matrix model, the contribution of the twisted states to the torus level partition function explicitly and show that it precisely matches the world-sheet result, providing a non-trivial test of the proposed duality. Finally we discuss some interesting features of the partition function and the possibility of realising it as a τ-function of an integrable hierarchy.

Cardioprotective Effects of Voluntary Exercise in a Rat Model: Role of Matrix Metalloproteinase-2

Directory of Open Access Journals (Sweden)

Anikó Pósa

2015-01-01

Full Text Available Background. Regular exercise at moderate intensity reduces cardiovascular risks. Matrix metalloproteinases (MMPs play a major role in cardiac remodeling, facilitating physiological adaptation to exercise. The aim of this study was to examine the influence of voluntary physical exercise on the MMP-2 enzyme activity and to investigate the cardiac performance by measurement of angina susceptibility of the heart, the basal blood pressure, the surviving aorta ring contraction, and the cardiac infarct size after I/R-induced injury. Methods. Male Wistar rats were divided into control and exercising groups. After a 6-week period, the serum level of MMP-2, basal blood pressure, cardiac angina susceptibility (the ST segment depression provoked by epinephrine and 30 s later phentolamine, AVP-induced heart perfusion and aorta ring contraction, infarct size following 30 min ischemia and 120 min reperfusion, and coronary effluent MMP-2 activity were measured. Results. Voluntary wheel-running exercise decreased both the sera (64 kDa and 72 kDa and the coronary effluent (64 kDa MMP-2 level, reduced the development of ST depression, improved the isolated heart perfusion, and decreased the ratio of infarct size. Conclusion. 6 weeks of voluntary exercise training preserved the heart against cardiac injury. This protective mechanism might be associated with the decreased activity of MMP-2.

Thermal and mechanical behavior of metal matrix and ceramic matrix composites

Science.gov (United States)

Kennedy, John M. (Editor); Moeller, Helen H. (Editor); Johnson, W. S. (Editor)

1990-01-01

The present conference discusses local stresses in metal-matrix composites (MMCs) subjected to thermal and mechanical loads, the computational simulation of high-temperature MMCs' cyclic behavior, an analysis of a ceramic-matrix composite (CMC) flexure specimen, and a plasticity analysis of fibrous composite laminates under thermomechanical loads. Also discussed are a comparison of methods for determining the fiber-matrix interface frictional stresses of CMCs, the monotonic and cyclic behavior of an SiC/calcium aluminosilicate CMC, the mechanical and thermal properties of an SiC particle-reinforced Al alloy MMC, the temperature-dependent tensile and shear response of a graphite-reinforced 6061 Al-alloy MMC, the fiber/matrix interface bonding strength of MMCs, and fatigue crack growth in an Al2O3 short fiber-reinforced Al-2Mg matrix MMC.

Encyclopedia of Explosives and Related Items. Volume 8

Science.gov (United States)

1978-01-01

samples containing a max of 0.5% w Ibid, E170 (Electrolytic Hygrometer Method); Neutron Measurements. The interaction of Ibid, E171 -L to E172-L...serving as blanks, and with a Element Matrix a Calculated Thermalc Fastd standard sample of TiO2 . Irradiations were Al At20 3 52.91 52.10 ±0.3 3e...concerns lead used include: MgO, TiO2 , Sr2 0 3 , ZnO, BaO, monoxide in its reaction with silicon while both Sb 2 03, Ta2 O5, W03 , U20 5 and HfO2 . Also

Self-Ordered Voids Formation in SiO2 Matrix by Ge Outdiffusion

Directory of Open Access Journals (Sweden)

B. Pivac

2018-01-01

Full Text Available The annealing behavior of very thin SiO2/Ge multilayers deposited on Si substrate by e-gun deposition in high vacuum was explored. It is shown that, after annealing at moderate temperatures (800°C in inert atmosphere, Ge is completely outdiffused from the SiO2 matrix leaving small (about 3 nm spherical voids embedded in the SiO2 matrix. These voids are very well correlated and formed at distances governed by the preexisting multilayer structure (in vertical direction and self-organization (in horizontal direction. The formed films produce intensive photoluminescence (PL with a peak at 500 nm. The explored dynamics of the PL decay show the existence of a very rapid process similar to the one found at Ge/SiO2 defected interface layers.

The selection of a matrix for the recovery of uranium by wet high-intensity magnetic separation

International Nuclear Information System (INIS)

Svoboda, J.

1985-01-01

The proper choice of a suitable matrix for high-intensity magnetic separation is of the utmost importance, since the geometry and size of the matrix play decisive roles in the achievement of optimum separation conditions. In relatively simple filtration applications, the matrix must offer a high efficiency of collision with suspended particles, a high probability of retention of intercepted particles, and high loading capacity. Also, it must be easily cleaned. The results obtained by the use of theoretical models of magnetic separation fail to agree with the experimental results for basic parameters like the ratio of particle size to matrix size, the length of the matrix, and the magnetic properties of the matrix material. Preconceived ideas about the matrix often lead to the erroneous choice of a matrix, and hence to its unsatisfactory performance during magnetic separation. The potential value of high-intensity magnetic separation as applied to the recovery of uranium and gold from leach residues and in association with the development of a large-scale magnetic separator to be used for the same purpose led to the present investigation in which a wide spectrum of matrix shapes and sizes were tested. It was found that the optimum recovery and selectivity of separation are obtained at a ratio of particle size to matrix-element size ranging from 200 to 300. The use of these matrices also results in a low degree of mechanical entrapment, particularly of coarser particles, for which straining plays a significant role for fine matrices. It was also found that the magnetization of a matrix plays a minor role, contrary to the theoretical predictions. Furthermore, the effects of matrix height, matrix loading, and scalping of the pulp by paramagnetic matrices were evaluated for various types of matrices

Effect of particulate matrix inhibitors on microstructure and properties of 2-D carbon-carbon composites

International Nuclear Information System (INIS)

Tlomak, P.; Takano, Shigeru; Wright, M.A.; Ju, Chien-Ping.

1991-01-01

Extended-life applications of structural carbon-carbon (C-C) composites involve multiple periods of operation in high-temperature oxidizing environments and as such require a reliable oxidation protection system (OPS). Advanced OPS's generally consist of an external ceramic coating combined with an in-depth matrix inhibitor. This work investigated the effects produced by particulate inhibitors doped on the matrix on the microstructure of 2D, PAN fiber-pitch matrix C-C's. Boron and zirconium-based particulate inhibitors were added to the matrix material prior to heat treatment. A process was developed to assure a uniform distribution of the inhibitors. Oxidation behavior of such matrix-inhibited composites was evaluated using isothermal oxidation tests. 5 refs

Mixed matrix membranes prepared from high impact polystyrene with dispersed TiO2 nanoparticles for gas separation

Directory of Open Access Journals (Sweden)

P. Safaei

2016-01-01

Full Text Available The current study presents synthesis and characterization of high impact polystyrene - TiO2 nanoparticles mixed matrix membranes for separation of carbon dioxide from nitrogen. The solution-casting method was used for preparation of membranes. The nano mixed matrix membranes were characterized using scanning electron microscopy to ensure the suitable dispersion of nano particles in high impact polystyrene matrix. The effect of TiO2 nanoparticles loading on membrane performance was investigated. The separation performance of synthesized membranes was investigated in separation of CO2 from CO2/N2 mixture. Effect of feed pressure and TiO2 content on separation of CO2 was studied. The results revealed that increase of feed pressure decreases flux of gases through the mixed matrix membrane. The results also confirmed that the best separation performance can be obtained at TiO2 nanoparticles loading of 7 wt.%.

Ceramic matrix composites by microwave assisted CVI

International Nuclear Information System (INIS)

Currier, R.P.; Devlin, D.J.

1993-01-01

Chemical vapor infiltration (CVI) processes for producing continuously reinforced ceramic composites are reviewed. Potential advantages of microwave assisted CVI are noted and numerical studies of microwave assisted CVI are reviewed. The models predict inverted thermal gradients in fibrous ceramic preforms subjected to microwave radiation and suggest processing strategies for achieving uniformly dense composites. Comparisons are made to experimental results on silicon-based composite systems. The role played by the relative ability of fiber and matrix to dissipate microwave energy is noted. Results suggest that microwave induced inverted gradients can be exploited to promote inside-out densification. 10 refs., 2 figs

Efficiency criterion for teleportation via channel matrix, measurement matrix and collapsed matrix

Directory of Open Access Journals (Sweden)

Xin-Wei Zha

Full Text Available In this paper, three kinds of coefficient matrixes (channel matrix, measurement matrix, collapsed matrix associated with the pure state for teleportation are presented, the general relation among channel matrix, measurement matrix and collapsed matrix is obtained. In addition, a criterion for judging whether a state can be teleported successfully is given, depending on the relation between the number of parameter of an unknown state and the rank of the collapsed matrix. Keywords: Channel matrix, Measurement matrix, Collapsed matrix, Teleportation

Role of shell structure in the 2νββ nuclear matrix elements

International Nuclear Information System (INIS)

Nakada, H.

1998-01-01

Significance of the nuclear shell structure in the ββ nuclear matrix elements is pointed out. The 2νββ processes are mainly mediated by the low-lying 1 + states. The shell structure also gives rise to concentration or fragmentation of the 2νββ components over intermediate states, depending on nuclide. These roles of the shell structure are numerically confirmed by realistic shell model calculations. Some shell structure effects are suggested for 0νββ matrix elements; dominance of low-lying intermediate states and nucleus-dependence of their spin-parities. (orig.)

Matrix metalloproteinase-2 is a consistent prognostic factor in gastric cancer

NARCIS (Netherlands)

Kubben, F.J.G.M.; Sier, C.F.M.; Duijn, W. van; Griffioen, G.; Hanemaaijer, R.; Velde, C.J.H. van de; Krieken, J.H.J.M. van; Lamers, C.B.H.W.; Verspaget, H.W.

2006-01-01

In a pioneer study, we showed 10 years ago that enhanced tissue levels of the matrix metalloproteinases (MMPs) MMP-2 and MMP-9 in gastric cancers, as determined by zymography, were related with worse overall survival of the patients. To corroborate these observations, we now assessed MMP-2 and MMP-9

Matrix metalloproteinase-2 is a consistent prognostic factor in gastric cancer.

NARCIS (Netherlands)

Kubben, F.J.G.M.; Sier, C.F.M.; Duijn, W. van; Griffioen, G.; Hanemaaijer, R.; Velde, C.J. van de; Krieken, J.H.J.M. van; Lamers, C.B.H.W.; Verspaget, H.W.

2006-01-01

In a pioneer study, we showed 10 years ago that enhanced tissue levels of the matrix metalloproteinases (MMPs) MMP-2 and MMP-9 in gastric cancers, as determined by zymography, were related with worse overall survival of the patients. To corroborate these observations, we now assessed MMP-2 and MMP-9

The matrix nonlinear Schrodinger equation in dimension 2

DEFF Research Database (Denmark)

Zuhan, L; Pedersen, Michael

2001-01-01

In this paper we study the existence of global solutions to the Cauchy problem for the matrix nonlinear Schrodinger equation (MNLS) in 2 space dimensions. A sharp condition for the global existence is obtained for this equation. This condition is in terms of an exact stationary solution...... of a semilinear elliptic equation. In the scalar case, the MNLS reduces to the well-known cubic nonlinear Schrodinger equation for which existence of solutions has been studied by many authors. (C) 2001 Academic Press....

Minocycline Attenuates Neonatal Germinal-Matrix-Hemorrhage-Induced Neuroinflammation and Brain Edema by Activating Cannabinoid Receptor 2.

Science.gov (United States)

Tang, Jun; Chen, Qianwei; Guo, Jing; Yang, Liming; Tao, Yihao; Li, Lin; Miao, Hongping; Feng, Hua; Chen, Zhi; Zhu, Gang

2016-04-01

Germinal matrix hemorrhage (GMH) is the most common neurological disease of premature newborns leading to detrimental neurological sequelae. Minocycline has been reported to play a key role in neurological inflammatory diseases by controlling some mechanisms that involve cannabinoid receptor 2 (CB2R). The current study investigated whether minocycline reduces neuroinflammation and protects the brain from injury in a rat model of collagenase-induced GMH by regulating CB2R activity. To test this hypothesis, the effects of minocycline and a CB2R antagonist (AM630) were evaluated in male rat pups that were post-natal day 7 (P7) after GMH. We found that minocycline can lead to increased CB2R mRNA expression and protein expression in microglia. Minocycline significantly reduced GMH-induced brain edema, microglial activation, and lateral ventricular volume. Additionally, minocycline enhanced cortical thickness after injury. All of these neuroprotective effects of minocycline were prevented by AM630. A cannabinoid CB2 agonist (JWH133) was used to strengthen the hypothesis, which showed the identical neuroprotective effects of minocycline. Our study demonstrates, for the first time, that minocycline attenuates neuroinflammation and brain injury in a rat model of GMH, and activation of CBR2 was partially involved in these processes.

Evaluation of matrix metalloproteinase-9 expressions in nasopharyngeal carcinoma patients

Science.gov (United States)

Farhat; Asnir, R. A.; Yudhistira, A.; Daulay, E. R.; Puspitasari, D.; Yulius, S.

2018-03-01

Nasopharyngeal carcinoma (NPC) is one of head and neck cancer with a poor prognosis because of the position of the tumor adjacent to the skull base and vital structures. Degradation of extracellular matrix that will cause tumor cells to invade surrounding tissues, vascular or lymphatic vessels. One that plays a role in the extracellular matrix degradation process is matrix metalloproteinase-9 (MMP-9). MMP-9 plays a role in tumor invasion process, metastasis and induction of tumor tissue vascularization. To determine the expression of MMP-9 in patients with nasopharyngeal carcinoma, a descriptive study was conducted by examining immunohistochemistry MMP-9 in 30 NPC tissues that had never received radiotherapy, chemotherapy or combination. Frequency distribution of NPC patient mostly in the age group 41-50 years old and 51-60 years were nine people (30.0%); men (73.3%) and non-keratinizing squamous cell carcinoma (53.3%) histopathology type. The overexpression of MMP-9 in patients with nasopharyngeal carcinoma were mostly found in advance stage.

Influence of gate recess on the electronic characteristics of β-Ga2O3 MOSFETs

Science.gov (United States)

Lv, Yuanjie; Mo, Jianghui; Song, Xubo; He, Zezhao; Wang, Yuangang; Tan, Xin; Zhou, Xingye; Gu, Guodong; Guo, Hongyu; Feng, Zhihong

2018-05-01

Gallium oxide (Ga2O3) metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated with gate recess depths of 110 nm and 220 nm, respectively. The gate recess was formed by dry plasma etching with Cr metal as the mask. The fabricated devices with a 25-nm HfO2 gate dielectric both showed a low off-state drain current of about 1.8 × 10-10 A/mm. The effects of recess depth on the electronic characteristics of Ga2O3 MOSFETs were investigated. Upon increasing the recess depth from 110 nm to 220 nm, the saturated drain current decreased from 20.7 mA/mm to 2.6 mA/mm, while the threshold voltage moved increased to +3 V. Moreover, the breakdown voltage increased from 122 V to 190 V. This is mainly because the inverted-trapezoidal gate played the role of a gate-field plate, which suppressed the peak electric field close to the gate.

Quorum-sensing regulation of the biofilm matrix genes (pel) of Pseudomonas aeruginosa.

Science.gov (United States)

Sakuragi, Yumiko; Kolter, Roberto

2007-07-01

Quorum sensing (QS) has been previously shown to play an important role in the development of Pseudomonas aeruginosa biofilms (D. G. Davies et al., Science 280:295-298, 1998). Although QS regulation of swarming and DNA release has been shown to play important roles in biofilm development, regulation of genes directly involved in biosynthesis of biofilm matrix has not been described. Here, transcription of the pel operon, essential for the production of a glucose-rich matrix exopolysaccharide, is shown to be greatly reduced in lasI and rhlI mutants. Chemical complementation of the lasI mutant with 3-oxo-dodecanoyl homoserine lactone restores pel transcription to the wild-type level and biofilm formation ability. These findings thus connect QS signaling and transcription of genes responsible for biofilm matrix biosynthesis.

The Non-linear Trajectory of Change in Play Profiles of Three Children in Psychodynamic Play Therapy.

Science.gov (United States)

Halfon, Sibel; Çavdar, Alev; Orsucci, Franco; Schiepek, Gunter K; Andreassi, Silvia; Giuliani, Alessandro; de Felice, Giulio

2016-01-01

Aim: Even though there is substantial evidence that play based therapies produce significant change, the specific play processes in treatment remain unexamined. For that purpose, processes of change in long-term psychodynamic play therapy are assessed through a repeated systematic assessment of three children's "play profiles," which reflect patterns of organization among play variables that contribute to play activity in therapy, indicative of the children's coping strategies, and an expression of their internal world. The main aims of the study are to investigate the kinds of play profiles expressed in treatment, and to test whether there is emergence of new and more adaptive play profiles using dynamic systems theory as a methodological framework. Methods and Procedures: Each session from the long-term psychodynamic treatment (mean number of sessions = 55) of three 6-year-old good outcome cases presenting with Separation Anxiety were recorded, transcribed and coded using items from the Children's Play Therapy Instrument (CPTI), created to assess the play activity of children in psychotherapy, generating discrete and measurable units of play activity arranged along a continuum of four play profiles: "Adaptive," "Inhibited," "Impulsive," and "Disorganized." The play profiles were clustered through K -means Algorithm, generating seven discrete states characterizing the course of treatment and the transitions between these states were analyzed by Markov Transition Matrix, Recurrence Quantification Analysis (RQA) and odds ratios comparing the first and second halves of psychotherapy. Results: The Markov Transitions between the states scaled almost perfectly and also showed the ergodicity of the system, meaning that the child can reach any state or shift to another one in play. The RQA and odds ratios showed two trends of change, first concerning the decrease in the use of "less adaptive" strategies, second regarding the reduction of play interruptions. Conclusion

Matrix-assisted relaxation in Fe(phen){sub 2}(NCS){sub 2} spin-crossover microparticles, experimental and theoretical investigations

Energy Technology Data Exchange (ETDEWEB)

Enachescu, Cristian, E-mail: cristian.enachescu@uaic.ro; Stancu, Alexandru [Faculty of Physics, “Alexandru Ioan Cuza” University, 700506 Iasi (Romania); Tanasa, Radu [Faculty of Physics, “Alexandru Ioan Cuza” University, 700506 Iasi (Romania); Department of Engineering, University of Cambridge, CB2 1PZ Cambridge (United Kingdom); Tissot, Antoine [Institut de Chimie Moléculaire et des Matériaux d' Orsay, Université Paris Sud, Université Paris-Saclay, CNRS, 91405 Orsay (France); Institut Lavoisier de Versailles, UMR 8180, CNRS, Université de Versailles-Saint Quentin en Yvelines, 78035 Versailles (France); Laisney, Jérôme; Boillot, Marie-Laure, E-mail: marie-laure.boillot@u-psud.fr [Institut de Chimie Moléculaire et des Matériaux d' Orsay, Université Paris Sud, Université Paris-Saclay, CNRS, 91405 Orsay (France)

2016-07-18

In this study, we present the influence of the embedding matrix on the relaxation of Fe(phen){sub 2}(NCS){sub 2} (phen = 1,10-phenanthroline) spin-transition microparticles as revealed by experiments and provide an explanation within the framework of an elastic model based on a Monte-Carlo method. Experiments show that the shape of the high-spin → low-spin relaxation curves is drastically changed when the particles are dispersed in glycerol. This effect was considered in the model by means of interactions between the microparticles and the matrix. A faster start of the relaxation for microparticles embedded in glycerol is due to an initial positive local pressure acting on the edge spin-crossover molecules from the matrix side. This local pressure diminishes and eventually becomes negative during relaxation, as an effect of the decrease of the volume of spin-crossover microparticles from high-spin to low-spin.

Quantum correlations and Nash equilibria of a bi-matrix game

International Nuclear Information System (INIS)

Iqbal, Azhar

2004-01-01

Playing a symmetric bi-matrix game is usually physical implemented by sharing pairs of 'objects' between two players. A new setting is proposed that explicitly shows effects of quantum correlations between the pairs on the structure of payoff relations and the 'solutions' of the game. The setting allows a re-expression of the game such that the players play the classical game when their moves are performed on pairs of objects having correlations that satisfy Bell's inequalities. If players receive pairs having quantum correlations the resulting game cannot be considered another classical symmetric bi-matrix game. Also the Nash equilibria of the game are found to be decided by the nature of the correlations. (letter to the editor)

The nuclear reaction matrix

International Nuclear Information System (INIS)

Krenciglowa, E.M.; Kung, C.L.; Kuo, T.T.S.; Osnes, E.; and Department of Physics, State University of New York at Stony Brook, Stony Brook, New York 11794)

1976-01-01

Different definitions of the reaction matrix G appropriate to the calculation of nuclear structure are reviewed and discussed. Qualitative physical arguments are presented in support of a two-step calculation of the G-matrix for finite nuclei. In the first step the high-energy excitations are included using orthogonalized plane-wave intermediate states, and in the second step the low-energy excitations are added in, using harmonic oscillator intermediate states. Accurate calculations of G-matrix elements for nuclear structure calculations in the Aapprox. =18 region are performed following this procedure and treating the Pauli exclusion operator Q 2 /sub p/ by the method of Tsai and Kuo. The treatment of Q 2 /sub p/, the effect of the intermediate-state spectrum and the energy dependence of the reaction matrix are investigated in detail. The present matrix elements are compared with various matrix elements given in the literature. In particular, close agreement is obtained with the matrix elements calculated by Kuo and Brown using approximate methods

An algorithm for solving an arbitrary triangular fully fuzzy Sylvester matrix equations

Science.gov (United States)

Daud, Wan Suhana Wan; Ahmad, Nazihah; Malkawi, Ghassan

2017-11-01

Sylvester matrix equations played a prominent role in various areas including control theory. Considering to any un-certainty problems that can be occurred at any time, the Sylvester matrix equation has to be adapted to the fuzzy environment. Therefore, in this study, an algorithm for solving an arbitrary triangular fully fuzzy Sylvester matrix equation is constructed. The construction of the algorithm is based on the max-min arithmetic multiplication operation. Besides that, an associated arbitrary matrix equation is modified in obtaining the final solution. Finally, some numerical examples are presented to illustrate the proposed algorithm.

Nanosatellite and Plug-and-Play Architecture 2 (NAPA 2)

Science.gov (United States)

2017-02-28

development of a 6U- format Space Plug-and-play Architecture (SPA) Research Cubesat (SPARC). SPARC-1 (first and only pursued under this PA) demonstrates...development of a six unit (6U)- format Space Plug-and-play Architecture (SPA) Research Cubesat (SPARC). SPARC-1 (first and only pursued under this PA...computers – More capable, more centralized, bigger wiring bundle Elimination of central computers, distribution of intelligence in systems Rad- hard

Improved DC performance of AlGaN/GaN high electron mobility transistors using hafnium oxide for surface passivation

International Nuclear Information System (INIS)

Liu, Chang; Chor, Eng Fong; Tan, Leng Seow

2007-01-01

Improved DC performance of AlGaN/GaN high electron mobility transistors (HEMTs) have been demonstrated using reactive-sputtered hafnium oxide (HfO 2 ) thin film as the surface passivation layer. Hall data indicate a significant increase in the product of sheet carrier concentration (n s ) and electron mobility (μ n ) in the HfO 2 -passivated HEMTs, compared to the unpassivated HEMTs. This improvement in electron carrier characteristics gives rise to a 22% higher I Dmax and an 18% higher g mmax in HEMTs with HfO 2 passivation relative to the unpassivated devices. On the other hand, I gleak of the HEMTs decreases by nearly one order of magnitude when HfO 2 passivation is applied. In addition, drain current is measured in the subthreshold regime. Compared to the unpassivated HEMTs, HfO 2 -passivated HEMTs exhibit a much smaller off-state I D , indicating better turn-off characteristics

The scattering matrix is non-trivial for weakly coupled P(phi)2 models

International Nuclear Information System (INIS)

Osterwalder, K.; Seneor, R.

1976-01-01

It is shown that for sufficiently small coupling constant lambda the lambdaP(phi) 2 quantum field theory models have a scattering matrix which is different from 1. The other method is to write the scattering matrix elements as polynomials in lambda, whose coefficients, though themselves functions of lamda, are uniformly bounded for lambda sufficiently small. The first order term in that expansion is the one given by perturbation theory. (Auth.)

Study of ionization process of matrix molecules in matrix-assisted laser desorption ionization

Energy Technology Data Exchange (ETDEWEB)

Murakami, Kazumasa; Sato, Asami; Hashimoto, Kenro; Fujino, Tatsuya, E-mail: fujino@tmu.ac.jp

2013-06-20

Highlights: ► Proton transfer and adduction reaction of matrix in MALDI were studied. ► Hydroxyl group forming intramolecular hydrogen bond was related to the ionization. ► Intramolecular proton transfer in the electronic excited state was the initial step. ► Non-volatile analytes stabilized protonated matrix in the ground state. ► A possible mechanism, “analyte support mechanism”, has been proposed. - Abstract: Proton transfer and adduction reaction of matrix molecules in matrix-assisted laser desorption ionization were studied. By using 2,4,6-trihydroxyacetophenone (THAP), 2,5-dihydroxybenzoic acid (DHBA), and their related compounds in which the position of a hydroxyl group is different, it was clarified that a hydroxyl group forming an intramolecular hydrogen bond is related to the ionization of matrix molecules. Intramolecular proton transfer in the electronic excited state of the matrix and subsequent proton adduction from a surrounding solvent to the charge-separated matrix are the initial steps for the ionization of matrix molecules. Nanosecond pump–probe NIR–UV mass spectrometry confirmed that the existence of analyte molecules having large dipole moment in their structures is necessary for the stabilization of [matrix + H]{sup +} in the electronic ground state.

EISPACK, Subroutines for Eigenvalues, Eigenvectors, Matrix Operations

International Nuclear Information System (INIS)

Garbow, Burton S.; Cline, A.K.; Meyering, J.

1993-01-01

1 - Description of problem or function: EISPACK3 is a collection of 75 FORTRAN subroutines, both single- and double-precision, that compute the eigenvalues and eigenvectors of nine classes of matrices. The package can determine the Eigen-system of complex general, complex Hermitian, real general, real symmetric, real symmetric band, real symmetric tridiagonal, special real tridiagonal, generalized real, and generalized real symmetric matrices. In addition, there are two routines which use the singular value decomposition to solve certain least squares problem. The individual subroutines are - Identification/Description: BAKVEC: Back transform vectors of matrix formed by FIGI; BALANC: Balance a real general matrix; BALBAK: Back transform vectors of matrix formed by BALANC; BANDR: Reduce sym. band matrix to sym. tridiag. matrix; BANDV: Find some vectors of sym. band matrix; BISECT: Find some values of sym. tridiag. matrix; BQR: Find some values of sym. band matrix; CBABK2: Back transform vectors of matrix formed by CBAL; CBAL: Balance a complex general matrix; CDIV: Perform division of two complex quantities; CG: Driver subroutine for a complex general matrix; CH: Driver subroutine for a complex Hermitian matrix; CINVIT: Find some vectors of complex Hess. matrix; COMBAK: Back transform vectors of matrix formed by COMHES; COMHES: Reduce complex matrix to complex Hess. (elementary); COMLR: Find all values of complex Hess. matrix (LR); COMLR2: Find all values/vectors of cmplx Hess. matrix (LR); CCMQR: Find all values of complex Hessenberg matrix (QR); COMQR2: Find all values/vectors of cmplx Hess. matrix (QR); CORTB: Back transform vectors of matrix formed by CORTH; CORTH: Reduce complex matrix to complex Hess. (unitary); CSROOT: Find square root of complex quantity; ELMBAK: Back transform vectors of matrix formed by ELMHES; ELMHES: Reduce real matrix to real Hess. (elementary); ELTRAN: Accumulate transformations from ELMHES (for HQR2); EPSLON: Estimate unit roundoff

Immunohistochemical correlation of matrix metalloproteinase-2 and tissue inhibitors of metalloproteinase-2 in tobacco associated epithelial dysplasia.

Science.gov (United States)

Bajracharya, Dipshikha; Shrestha, Bijayatha; Kamath, Asha; Menon, Aparna; Radhakrishnan, Raghu

2014-01-01

To study the immunohistochemical expression of matrix metalloproteinase and tissue inhibitors of matrix metalloproteinase-2 in different histological grades of tobacco associated epithelial dysplasia and correlate the association between these proteases. Potentially malignant oral disorders (PMODs) progressing to oral cancer are related to the severity of epithelial dysplasia. A retrospective immunohistochemical study was carried out on 30 clinically and histologically proven cases of leukoplakia with dysplasia and 10 cases of normal buccal mucosa using anti-MMP-2 and anti-TIMP-2 monoclonal antibodies. Mann Whitney U test, for comparing the expression of both MMP-2 and TIMP-2 in normal mucosa with dysplasia, was highly significant (P correlation between MMP-2 and TIMP-2 through different grades of dysplasia and cells observed showed positive correlation. Concomitant increase in the expression of both MMP-2 and TIMP-2 suggested that the activation of MMP-2 is dependent on TIMP-2 acting as a cofactor. Changes in TIMP-2 levels are considered important because they directly affect the level of MMP-2 activity.

Role of Matrix Metalloproteinase-2, Matrix Metalloproteinase-9, and Vascular Endothelial Growth Factor in the Development of Chronic Subdural Hematoma

Science.gov (United States)

Hua, Cong; Feng, Yan; Yuan, Hongyan; Song, Hongmei

2016-01-01

Abstract Chronic subdural hematoma (CSDH) is an inflammatory and angiogenic disease. Vascular endothelial growth factor (VEGF) has an important effect on the pathological progression of CSDH. The matrix metalloproteinases (MMPs) and VEGF also play a significant role in pathological angiogenesis. Our research was to investigate the level of MMPs and VEGF in serum and hematoma fluid. Magnetic Resonance Imaging (MRI) shows the characteristics of different stages of CSDH. We also analyzed the relationship between the level of VEGF in subdural hematoma fluid and the appearances of the patients' MRI. We performed a study comparing serum and hematoma fluid in 37 consecutive patients with primary CSDHs using enzyme-linked immunosorbent assay (ELISA). MMP-2 and MMP-9 activity was assayed by the gelatin zymography method. The patients were divided into five groups according to the appearance of the hematomas on MRI: group 1 (T1-weighted low, T2-weighted low, n=4), group 2 (T1-weighted high, T2-weighted low, n=11), group 3 (T1-weighted mixed, T2-weighted mixed, n=9), group 4 (T1-weighted high, T2-weighted high, n=5), and group 5 (T1-weighted low, T2-weighted high, n=8). Neurological status was assessed by Markwalder score on admission and at follow-up. The mean age, sex, and Markwalder score were not significantly different among groups. The mean concentration of VEGF, MMP-2, and MMP-9 were significantly higher in hematoma fluid than in serum (phematoma fluid (phematoma fluid (phematoma fluid, suggesting that the MMPs/VEGF system may be involved in the angiogenesis of CSDH. We also demonstrate a significant correlation between the concentrations of VEGF and MRI appearance. This finding supports the hypothesis that high VEGF concentration in the hematoma fluid is of major pathophysiological importance in the generation and steady increase of the hematoma volume, as well as the determination of MRI appearance. PMID:25646653

Expression of RECK and matrix metalloproteinase-2 in ameloblastoma

International Nuclear Information System (INIS)

Zhang, Bin; Zhang, Jin; Xu, Zhi-Ying; Xie, Hong-Liang

2009-01-01

Ameloblastoma is a frequent odontogenic benign tumor characterized by local invasiveness, high risk of recurrence and occasional metastasis and malignant transformation. Matrix metalloproteinase-2 (MMP-2) promotes tumor invasion and progression by destroying the extracellular matrix (ECM) and basement membrane. For this proteolytic activity, the endogenous inhibitor is reversion-inducing cysteine rich protein with Kazal motifs (RECK). The aim of this study was to characterize the relationship between RECK and MMP-2 expression and the clinical manifestation of ameloblastoma. Immunohistochemistry and reverse transcription-polymerase chain reaction (RT-PCR) were employed to detect the protein and mRNA expression of RECK and MMP-2 in keratocystic odontogenic tumor (KCOT), ameloblastoma and ameloblastic carcinoma. RECK protein expression was significantly reduced in KCOT (87.5%), ameloblastoma (56.5%) and ameloblastic carcinoma (0%) (P < 0.01), and was significantly lower in recurrent ameloblastoma compared with primary ameloblastoma (P < 0.01), but did not differ by histological type of ameloblastoma. MMP-2 protein expression was significantly higher in ameloblastoma and ameloblastic carcinoma compared with KCOT (P < 0.01). RECK mRNA expression was significantly lower in ameloblastoma than in KCOT (P < 0.01), lower in recurrent ameloblastoma than in primary ameloblastoma, and was negative in ameloblastic carcinoma. MMP-2 mRNA expression was significantly higher in ameloblastoma compared with KCOT (P < 0.01), but was no different in recurrent ameloblastoma versus primary ameloblastoma. RECK protein expression was negatively associated with MMP-2 protein expression in ameloblastoma (r = -0.431, P < 0.01). Low or no RECK expression and increased MMP-2 expression may be associated with negative clinical findings in ameloblastoma. RECK may participate in the invasion, recurrence and malignant transformation of ameloblastoma by regulating MMP-2 at the post

Electronic States of High-k Oxides in Gate Stack Structures

Science.gov (United States)

Zhu, Chiyu

In this dissertation, in-situ X-ray and ultraviolet photoemission spectroscopy have been employed to study the interface chemistry and electronic structure of potential high-k gate stack materials. In these gate stack materials, HfO2 and La2O3 are selected as high-k dielectrics, VO2 and ZnO serve as potential channel layer materials. The gate stack structures have been prepared using a reactive electron beam system and a plasma enhanced atomic layer deposition system. Three interrelated issues represent the central themes of the research: 1) the interface band alignment, 2) candidate high-k materials, and 3) band bending, internal electric fields, and charge transfer. 1) The most highlighted issue is the band alignment of specific high-k structures. Band alignment relationships were deduced by analysis of XPS and UPS spectra for three different structures: a) HfO2/VO2/SiO2/Si, b) HfO 2-La2O3/ZnO/SiO2/Si, and c) HfO 2/VO2/ HfO2/SiO2/Si. The valence band offset of HfO2/VO2, ZnO/SiO2 and HfO 2/SiO2 are determined to be 3.4 +/- 0.1, 1.5 +/- 0.1, and 0.7 +/- 0.1 eV. The valence band offset between HfO2-La2O3 and ZnO was almost negligible. Two band alignment models, the electron affinity model and the charge neutrality level model, are discussed. The results show the charge neutrality model is preferred to describe these structures. 2) High-k candidate materials were studied through comparison of pure Hf oxide, pure La oxide, and alloyed Hf-La oxide films. An issue with the application of pure HfO2 is crystallization which may increase the leakage current in gate stack structures. An issue with the application of pure La2O3 is the presence of carbon contamination in the film. Our study shows that the alloyed Hf-La oxide films exhibit an amorphous structure along with reduced carbon contamination. 3) Band bending and internal electric fields in the gate stack structure were observed by XPS and UPS and indicate the charge transfer during the growth and process. The oxygen