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Sample records for hfo2 matrix plays

  1. Development and Performance Evaluations of HfO2-Si and Rare Earth-Si Based Environmental Barrier Bond Coat Systems for SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming

    2014-01-01

    Ceramic environmental barrier coatings (EBC) and SiCSiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft propulsion systems because of their ability to significantly increase engine operating temperatures, improve component durability, reduce engine weight and cooling requirements. Advanced EBC systems for SiCSiC CMC turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant material development challenges for the high temperature CMC components is to develop prime-reliant, high strength and high temperature capable environmental barrier coating bond coat systems, since the current silicon bond coat cannot meet the advanced EBC-CMC temperature and stability requirements. In this paper, advanced NASA HfO2-Si based EBC bond coat systems for SiCSiC CMC combustor and turbine airfoil applications are investigated. The coating design approach and stability requirements are specifically emphasized, with the development and implementation focusing on Plasma Sprayed (PS) and Electron Beam-Physic Vapor Deposited (EB-PVD) coating systems and the composition optimizations. High temperature properties of the HfO2-Si based bond coat systems, including the strength, fracture toughness, creep resistance, and oxidation resistance were evaluated in the temperature range of 1200 to 1500 C. Thermal gradient heat flux low cycle fatigue and furnace cyclic oxidation durability tests were also performed at temperatures up to 1500 C. The coating strength improvements, degradation and failure modes of the environmental barrier coating bond coat systems on SiCSiC CMCs tested in simulated stress-environment interactions are briefly discussed and supported by modeling. The performance enhancements of the HfO2-Si bond coat systems with rare earth element dopants and rare earth-silicon based bond coats are also highlighted. The advanced bond coat systems, when

  2. Environmental Stability and Oxidation Behavior of HfO2-Si and YbGd(O) Based Environmental Barrier Coating Systems for SiCSiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming; Farmer, Serene; McCue, Terry R.; Harder, Bryan; Hurst, Janet B.

    2017-01-01

    Ceramic environmental barrier coatings (EBC) and SiCSiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft propulsion systems because of their ability to significantly increase engine operating temperatures, improve component durability, reduce engine weight and cooling requirements. Advanced EBC systems for SiCSiC CMC turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant material development challenges for the high temperature CMC components is to develop prime-reliant, environmental durable environmental barrier coating systems. In this paper, the durability and performance of advanced Electron Beam-Physical Vapor Deposition (EB-PVD) NASA HfO2-Si and YbGdSi(O) EBC bond coat top coat systems for SiCSiC CMC have been summarized. The high temperature thermomechanical creep, fatigue and oxidation resistance have been investigated in the laboratory simulated high-heat-flux environmental test conditions. The advanced NASA EBC systems showed promise to achieve 1500C temperature capability, helping enable next generation turbine engines with significantly improved engine component temperature capability and durability.

  3. Epitaxial Thin Films of Y doped HfO2

    Science.gov (United States)

    Serrao, Claudy; Khan, Asif; Ramamoorthy, Ramesh; Salahuddin, Sayeef

    Hafnium oxide (HfO2) is one of a few metal oxides that is thermodynamically stable on silicon and silicon oxide. There has been renewed interest in HfO2 due to the recent discovery of ferroelectricity and antiferroelectricity in doped HfO2. Typical ferroelectrics - such as strontium bismuth tantalate (SBT) and lead zirconium titanate (PZT) - contain elements that easily react with silicon and silicon oxide at elevated temperatures; therefore, such ferroelectrics are not suited for device applications. Meanwhile, ferroelectric HfO2 offers promise regarding integration with silicon. The stable phase of HfO2 at room temperature is monoclinic, but HfO2 can be stabilized in the tetragonal, orthorhombic or even cubic phase by suitable doping. We stabilized Y-doped HfO2 thin films using pulsed laser deposition. The strain state can be controlled using various perovskite substrates and controlled growth conditions. We report on Y-doped HfO2 domain structures from piezo-response force microscopy (PFM) and structural parameters via X-ray reciprocal space maps (RSM). We hope this work spurs further interest in strain-tuned ferroelectricity in doped HfO2.

  4. Synthesis of Freestanding HfO2 Nanostructures

    Science.gov (United States)

    2011-04-05

    Tang J, Fabbri J, Robinson RD, Zhu Y, Herman IP, Steigerwald ML, Brus LE: Solid-solution nanoparticles:use of a nonhydrolytic sol-gel synthesis to...colloidal HfO2 nanorods. Adv Mater 2007, 19:2608-2612. Page 21 5. Qiu X, Howe JY, Cardoso MB, Polat O, Heller W: Size control of highly ordered HfO2

  5. Thermal Conductivity and Water Vapor Stability of Ceramic HfO2-Based Coating Materials

    Science.gov (United States)

    Zhu, Dong-Ming; Fox, Dennis S.; Bansal, Narottam P.; Miller, Robert A.

    2004-01-01

    HfO2-Y2O3 and La2Zr2O7 are candidate thermal/environmental barrier coating materials for gas turbine ceramic matrix composite (CMC) combustor liner applications because of their relatively low thermal conductivity and high temperature capability. In this paper, thermal conductivity and high temperature phase stability of plasma-sprayed coatings and/or hot-pressed HfO2-5mol%Y2O3, HfO2-15mol%Y2O3 and La2Zr2O7 were evaluated at temperatures up to 1700 C using a steady-state laser heat-flux technique. Sintering behavior of the plasma-sprayed coatings was determined by monitoring the thermal conductivity increases during a 20-hour test period at various temperatures. Durability and failure mechanisms of the HfO2-Y2O3 and La2Zr2O7 coatings on mullite/SiC Hexoloy or CMC substrates were investigated at 1650 C under thermal gradient cyclic conditions. Coating design and testing issues for the 1650 C thermal/environmental barrier coating applications will also be discussed.

  6. Influence of different oxidants on the band alignment of HfO2 films deposited by atomic layer deposition

    Institute of Scientific and Technical Information of China (English)

    Fan Ji-Bin; Liu Hong-Xia; Gao Bo; Ma Fei; Zhuo Qing-Qing; Hao Yue

    2012-01-01

    Based on X-ray photoelectron spectroscopy (XPS),influences of different oxidants on band alignment of HfO2 films deposited by atomic layer deposition (ALD) are investigated in this paper.The measured valence band offset (VBO) value for H2O-based HfO2 increases from 3.17 eV to 3.32 eV after annealing,whereas the VBO value for O3-based HfO2 decreases from 3.57 eV to 3.46 eV.The research results indicate that the silicate layer changes in different ways for H2O-based and O3-based HfO2 films after the annealing process,which plays a key role in generating the internal electric field formed by the dipoles.The variations of the dipoles at the interface between the HfO2 and SiO2 after annealing may lead the VBO values of H2O-based and O3-based HfO2 to vary in different ways,which fits with the variation of fiat band (VFB) voltage.

  7. Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

    Science.gov (United States)

    Zhang, Wei; Kong, Ji-Zhou; Cao, Zheng-Yi; Li, Ai-Dong; Wang, Lai-Guo; Zhu, Lin; Li, Xin; Cao, Yan-Qiang; Wu, Di

    2017-06-01

    The HfO2/TiO2/HfO2 trilayer-structure resistive random access memory (RRAM) devices have been fabricated on Pt- and TiN-coated Si substrates with Pt top electrodes by atomic layer deposition (ALD). The effect of the bottom electrodes of Pt and TiN on the resistive switching properties of trilayer-structure units has been investigated. Both Pt/HfO2/TiO2/HfO2/Pt and Pt/HfO2/TiO2/HfO2/TiN exhibit typical bipolar resistive switching behavior. The dominant conduction mechanisms in low and high resistance states (LRS and HRS) of both memory cells are Ohmic behavior and space-charge-limited current, respectively. It is found that the bottom electrodes of Pt and TiN have great influence on the electroforming polarity preference, ratio of high and low resistance, and dispersion of the operating voltages of trilayer-structure memory cells. Compared to using symmetric Pt top/bottom electrodes, the RRAM cells using asymmetric Pt top/TiN bottom electrodes show smaller negative forming voltage of -3.7 V, relatively narrow distribution of the set/reset voltages and lower ratio of high and low resistances of 102. The electrode-dependent electroforming polarity can be interpreted by considering electrodes' chemical activity with oxygen, the related reactions at anode, and the nonuniform distribution of oxygen vacancy concentration in trilayer-structure of HfO2/TiO2/HfO2 on Pt- and TiN-coated Si. Moreover, for Pt/HfO2/TiO2/HfO2/TiN devices, the TiN electrode as oxygen reservoir plays an important role in reducing forming voltage and improving uniformity of resistive switching parameters.

  8. Crystal structure of Si-doped HfO2

    Science.gov (United States)

    Zhao, Lili; Nelson, Matthew; Aldridge, Henry; Iamsasri, Thanakorn; Fancher, Chris M.; Forrester, Jennifer S.; Nishida, Toshikazu; Moghaddam, Saeed; Jones, Jacob L.

    2014-01-01

    Si-doped HfO2 was prepared by solid state synthesis of the starting oxides. Using Rietveld refinement of high resolution X-ray diffraction patterns, a substitutional limit of Si in HfO2 was determined as less than 9 at. %. A second phase was identified as Cristobalite (SiO2) rather than HfSiO4, the latter of which would be expected from existing SiO2-HfO2 phase diagrams. Crystallographic refinement with increased Si-dopant concentration in monoclinic HfO2 shows that c/b increases, while β decreases. The spontaneous strain, which characterizes the ferroelastic distortion of the unit cell, was calculated and shown to decrease with increasing Si substitution.

  9. Synthesis of freestanding HfO2 nanostructures

    Directory of Open Access Journals (Sweden)

    Boyle Kayla

    2011-01-01

    Full Text Available Abstract Two new methods for synthesizing nanostructured HfO2 have been developed. The first method entails exposing HfTe2 powders to air. This simple process resulted in the formation of nanometer scale crystallites of HfO2. The second method involved a two-step heating process by which macroscopic, freestanding nanosheets of HfO2 were formed as a byproduct during the synthesis of HfTe2. These highly two-dimensional sheets had side lengths measuring up to several millimeters and were stable enough to be manipulated with tweezers and other instruments. The thickness of the sheets ranged from a few to a few hundred nanometers. The thinnest sheets appeared transparent when viewed in a scanning electron microscope. It was found that the presence of Mn enhanced the formation of HfO2 by exposure to ambient conditions and was necessary for the formation of the large scale nanosheets. These results present new routes to create freestanding nanostructured hafnium dioxide. PACS: 81.07.-b, 61.46.Hk, 68.37.Hk.

  10. Growth and luminescence properties of Eu-doped HfO2/α-Al2O3 eutectic scintillator

    Institute of Scientific and Technical Information of China (English)

    Kei Kamada; Kosuke Hishinuma; Shunsuke Kurosawa; Akihiro Yamaji; Yasuhiro Shoji; Jan Pejchal; Yuji Ohashi; Yuui Yokota; Akira Yoshikawa

    2016-01-01

    HfO2/α-Al2O3 eutectics were grown by the micro-pulling down (μ-PD) method at the composition of 63.2 mol.%α-Al2O3, 35.512 mol.%HfO2, 0.92 mol.%Eu2O3 and 0.368 mol.%Y2O3. Rod phases with around 3–4μm diameter were observed on the transverse cross-section. The phase-separated scintillator fibers (PSSFs) structure with fibers of around 3–4μm diameter and 10–20μm length was observed. The electron back scattering patterns indicated crystal orientation of [101] for monoclinic HfO2 rod phase and [0001] forα-Al2O3 matrix in the transverse cross-section. Eu3+4f-4f emission was observed at 550–750 nm.

  11. Ferroelectric HfO2 for Emerging Ferroelectric Semiconductor Devices

    Science.gov (United States)

    Florent, Karine

    The spontaneous polarization in ferroelectrics (FE) makes them particularly attractive for non-volatile memory and logic applications. Non-volatile FRAM memories using perovskite structure materials, such as Lead Zirconate Titanate (PZT) and Strontium Bismuth Tantalate (SBT) have been studied for many years. However, because of their scaling limit and incompatibility with CMOS beyond 130 nm node, floating gate Flash memory technology has been preferred for manufacturing. The recent discovery of ferroelectricity in doped HfO2 in 2011 has opened the door for new ferroelectric based devices compatible with CMOS technology, such as Ferroelectric Field Effect Transistor (FeFET) and Ferroelectric Tunnel Junctions (FTJ). This work began with developing ferroelectric hysteresis characterization capabilities at RIT. Initially reactively sputtered aluminum doped HfO 2 films were investigated. It was observed that the composition control using co-sputtering was not achievable within the existing capabilities. During the course of this study, collaboration was established with the NaMLab group in Germany to investigate Si doped HfO2 deposited by Atomic Layer Deposition (ALD). Metal Ferroelectric Metal (MFM) devices were fabricated using TiN as the top and bottom electrode with Si:HfO2 thickness ranging from 6.4 nm to 22.9 nm. The devices were electrically tested for P-E, C-V and I-V characteristics. Structural characterizations included TEM, EELS, XRR, XRD and XPS/Auger spectroscopy. Higher remanant polarization (Pr) was observed for films of 9.3 nm and 13.1 nm thickness. Thicker film (22.9 nm) showed smaller Pr. Devices with 6.4 nm thick films exhibit tunneling behavior showing a memristor like I-V characteristics. The tunnel current and ferroelectricity showed decrease with cycling indicating a possible change in either the structure or the domain configurations. Theoretical simulations using the improved FE model were carried out to model the ferroelectric behavior of different stacks of films.

  12. Strong photoluminescence of the porous silicon with HfO2-filled microcavities

    Science.gov (United States)

    Jiang, Ran; Wu, Zhengran; Du, Xianghao; Han, Zuyin; Sun, Weideng

    2015-06-01

    Greatly enhanced blue emission was observed at room temperature in the single-crystal silicon with HfO2 filled into its microcavities. The broad blue band light was emitted from both the HfO2 dielectric and the porous Si. The ferroelectricity of HfO2 enhances the blue emission from Si by its filling into the microcaivities. At the same time, HfO2 contributes to the light emission for the transitions of the defect levels for oxygen vacancy. The observation of greatly enhanced blue light emission of the porous Si filled with HfO2 dielectric is remarkable as both HfO2 and Si are highly compatible with Si-based electronic industry.

  13. Study of Direct-Contact HfO2/Si Interfaces

    Directory of Open Access Journals (Sweden)

    Noriyuki Miyata

    2012-03-01

    Full Text Available Controlling monolayer Si oxide at the HfO2/Si interface is a challenging issue in scaling the equivalent oxide thickness of HfO2/Si gate stack structures. A concept that the author proposes to control the Si oxide interface by using ultra-high vacuum electron-beam HfO2 deposition is described in this review paper, which enables the so-called direct-contact HfO2/Si structures to be prepared. The electrical characteristics of the HfO2/Si metal-oxide-semiconductor capacitors are reviewed, which suggest a sufficiently low interface state density for the operation of metal-oxide-semiconductor field-effect-transistors (MOSFETs but reveal the formation of an unexpected strong interface dipole. Kelvin probe measurements of the HfO2/Si structures provide obvious evidence for the formation of dipoles at the HfO2/Si interfaces. The author proposes that one-monolayer Si-O bonds at the HfO2/Si interface naturally lead to a large potential difference, mainly due to the large dielectric constant of the HfO2. Dipole scattering is demonstrated to not be a major concern in the channel mobility of MOSFETs.

  14. Single layer of Ge quantum dots in HfO2 for floating gate memory capacitors.

    Science.gov (United States)

    Lepadatu, A M; Palade, C; Slav, A; Maraloiu, A V; Lazanu, S; Stoica, T; Logofatu, C; Teodorescu, V S; Ciurea, M L

    2017-04-28

    High performance trilayer memory capacitors with a floating gate of a single layer of Ge quantum dots (QDs) in HfO2 were fabricated using magnetron sputtering followed by rapid thermal annealing (RTA). The layer sequence of the capacitors is gate HfO 2/floating gate of single layer of Ge QDs in HfO 2/tunnel HfO 2/p-Si wafers. Both Ge and HfO2 are nanostructured by RTA at moderate temperatures of 600-700 °C. By nanostructuring at 600 °C, the formation of a single layer of well separated Ge QDs with diameters of 2-3 nm at a density of 4-5 × 10(15) m(-2) is achieved in the floating gate (intermediate layer). The Ge QDs inside the intermediate layer are arranged in a single layer and are separated from each other by HfO2 nanocrystals (NCs) about 8 nm in diameter with a tetragonal/orthorhombic structure. The Ge QDs in the single layer are located at the crossing of the HfO2 NCs boundaries. In the intermediate layer, besides Ge QDs, a part of the Ge atoms is segregated by RTA at the HfO2 NCs boundaries, while another part of the Ge atoms is present inside the HfO2 lattice stabilizing the tetragonal/orthorhombic structure. The fabricated capacitors show a memory window of 3.8 ± 0.5 V and a capacitance-time characteristic with 14% capacitance decay in the first 3000-4000 s followed by a very slow capacitance decrease extrapolated to 50% after 10 years. This high performance is mainly due to the floating gate of a single layer of well separated Ge QDs in HfO2, distanced from the Si substrate by the tunnel oxide layer with a precise thickness.

  15. TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

    Science.gov (United States)

    Lomenzo, Patrick D.; Takmeel, Qanit; Zhou, Chuanzhen; Fancher, Chris M.; Lambers, Eric; Rudawski, Nicholas G.; Jones, Jacob L.; Moghaddam, Saeed; Nishida, Toshikazu

    2015-04-01

    Ferroelectric HfO2-based thin films, which can exhibit ferroelectric properties down to sub-10 nm thicknesses, are a promising candidate for emerging high density memory technologies. As the ferroelectric thickness continues to shrink, the electrode-ferroelectric interface properties play an increasingly important role. We investigate the TaN interface properties on 10 nm thick Si-doped HfO2 thin films fabricated in a TaN metal-ferroelectric-metal stack which exhibit highly asymmetric ferroelectric characteristics. To understand the asymmetric behavior of the ferroelectric characteristics of the Si-doped HfO2 thin films, the chemical interface properties of sputtered TaN bottom and top electrodes are probed with x-ray photoelectron spectroscopy. Ta-O bonds at the bottom electrode interface and a significant presence of Hf-N bonds at both electrode interfaces are identified. It is shown that the chemical heterogeneity of the bottom and top electrode interfaces gives rise to an internal electric field, which causes the as-grown ferroelectric domains to preferentially polarize to screen positively charged oxygen vacancies aggregated at the oxidized bottom electrode interface. Electric field cycling is shown to reduce the internal electric field with a concomitant increase in remanent polarization and decrease in relative permittivity. Through an analysis of pulsed transient switching currents, back-switching is observed in Si-doped HfO2 thin films with pinched hysteresis loops and is shown to be influenced by the internal electric field.

  16. Photocurrent generation in carbon nanotube/cubic-phase HfO2 nanoparticle hybrid nanocomposites

    Directory of Open Access Journals (Sweden)

    Protima Rauwel

    2016-07-01

    Full Text Available A hybrid material consisting of nonfunctionalized multiwall carbon nanotubes (MWCNTs and cubic-phase HfO2 nanoparticles (NPs with an average diameter of 2.6 nm has been synthesized. Free standing HfO2 NPs present unusual optical properties and a strong photoluminescence emission in the visible region, originating from surface defects. Transmission electron microscopy studies show that these NPs decorate the MWCNTs on topological defect sites. The electronic structure of the C K-edge in the nanocomposites was probed by electron energy loss spectroscopy, highlighting the key role of the MWCNT growth defects in anchoring HfO2 NPs. A combined optical emission and absorption spectroscopy approach illustrated that, in contrast to HfO2 NPs, the metallic MWCNTs do not emit light but instead expose their discrete electronic structure in the absorption spectra. The hybrid material manifests characteristic absorption features with a gradual merger of the MWCNT π-plasmon resonance band with the intrinsic defect band and fundamental edge of HfO2. The photoluminescence of the nanocomposites indicates features attributed to combined effects of charge desaturation of HfO2 surface states and charge transfer to the MWCNTs with an overall reduction of radiative recombination. Finally, photocurrent generation under UV–vis illumination suggests that a HfO2 NP/MWCNT hybrid system can be used as a flexible nanodevice for light harvesting applications.

  17. Structural degradation of thin HfO2 film on Ge during the postdeposition annealing

    Science.gov (United States)

    Miyata, Noriyuki; Yasuda, Tetsuji; Abe, Yasuhiro

    2010-05-01

    Securing the thermal robustness of thin hafnium oxide (HfO2) film on the semiconductor surface is an important technical issue in the fabrication of the metal-oxide-semiconductor field-effect transistor devices, as the HfO2-based high-k gate stacks usually undergo high-temperature processes. In this study, the structural development of thin HfO2 film on a Ge surface during postdeposition annealing in an ultrahigh vacuum was examined to explore the origin for the initial degradation of thin HfO2 film. Void nucleation and subsequent two-dimensional void growth take place at 780-840 °C, while the chemical composition of the remaining Hf oxide is virtually stable. Both the void nucleation and growth processes show similar larger activation energy of about 10 eV. Based on the observed manner of void growth and the estimated activation energies, the authors propose that mass transport on the HfO2 surface is responsible for void nucleation in the HfO2 films on Ge. The authors also compare the present results with the previous studies on HfO2/Si structures, and suggest that similar surface process leads to the local Hf silicidation.

  18. Soft Play Detection in Shooter Games Using Hit Matrix Analysis

    Directory of Open Access Journals (Sweden)

    Jussi Laasonen

    2015-08-01

    Full Text Available Soft play is a form of cheating where players deliberately play easy against each other. We evaluate different methods for detecting the players engaging in soft play in shooter games using data generated with synthetic players. These methods are used when analysing the hit matrix of the game.

  19. Ferroelectric phase stabilization of HfO2 by nitrogen doping

    Science.gov (United States)

    Xu, Lun; Nishimura, Tomonori; Shibayama, Shigehisa; Yajima, Takeaki; Migita, Shinji; Toriumi, Akira

    2016-09-01

    We report that nitrogen (N) doping can drive the ferroelectricity of HfO2. It was found that N doping can cause the transition from a monoclinic phase to a highly symmetric phase. The role of N doping is discussed from the viewpoints of charge balance and bond-constraining effects. The former is responsible for the structural transformation from a paraelectric phase to a ferroelectric phase by forming an oxygen vacancy. In addition, Hf-N and N-O bonds with covalent characteristics have strong effects on HfO2 structural and electrical properties, and thus contribute to a marked HfO2 para-/ferroelectric transition.

  20. Interaction of La2O3 capping layers with HfO2 gate dielectrics

    Science.gov (United States)

    Copel, M.; Guha, S.; Bojarczuk, N.; Cartier, E.; Narayanan, V.; Paruchuri, V.

    2009-11-01

    We report the effect of La2O3 capping layers on HfO2/SiO2/Si dielectrics, proposed for use in threshold voltage tuning of field effect transistors. Depth profiling with medium energy ion scattering shows that an initial surface layer of La2O3 diffuses through the HfO2 at elevated temperatures, ultimately converting some of the thin interfacial SiO2 into a silicate. Core-level photoemission measurements indicate that the additional band-bending induced by the La2O3 only appears after diffusion, and the added charge resides between the HfO2 and the substrate.

  1. Effects of Modified Precursor Solution on Microstructure of (Y,Yb)MnO3/HfO2/Si

    Science.gov (United States)

    Suzuki, Kazuyuki; Kato, Kazumi

    2007-10-01

    Ferroelectric/insulator/silicon structures were prepared using (Y,Yb)MnO3 films as ferroelectrics and HfO2 thin films as insulators through alkoxy-derived precursor solutions. The HfO2 solution was chemically modified in order to decrease the number of heating cycles required. The HfO2 films prepared using a partially hydrolyzed alkoxide solution had a uniform structure. From the results of measurements of the roughness level and refractive index of the HfO2 films, the partial hydrolysis of the HfO2 solution was found to be effective for the formation of a uniform microstructure in a thin insulator film. (Y,Yb)MnO3/HfO2/Si structures were constructed using the resultant HfO2 thin films prepared using the modified solutions.

  2. High-reflectivity HfO2/SiO2 ultraviolet mirrors.

    Science.gov (United States)

    Torchio, Philippe; Gatto, Alexandre; Alvisi, Marco; Albrand, Gérard; Kaiser, Norbert; Amra, Claude

    2002-06-01

    High-reflectivity dense multilayer coatings were produced for the ultraviolet spectral region. Thin-film single layers and UV mirrors were deposited by ion plating and plasma ion-assisted deposition high-energetic technologies. Optical characterizations of HfO2 and SiO2 single layers are made. The optical constants obtained for these two materials are presented. HfO2 and SiO2 mirrors with a reflectance of approximately 99% near 250 nm are reported.

  3. Nanoscale morphological and electrical homogeneity of HfO2 and ZrO2 thin films studied by conducting atomic-force microscopy

    Science.gov (United States)

    Kremmer, S.; Wurmbauer, H.; Teichert, C.; Tallarida, G.; Spiga, S.; Wiemer, C.; Fanciulli, M.

    2005-04-01

    The morphological and electrical evolution of HfO2 and ZrO2 thin films is investigated on the nanoscale using conducting atomic-force microscopy in ultrahigh vacuum. Films of different thicknesses have been grown by atomic layer deposition. With increasing film thickness the film structure changes from amorphous to polycrystalline. By conducting atomic-force microscopy using local current-voltage curve statistics and two-dimensional current imaging it is found that the formation of crystallites has different effects on the electrical properties of the two dielectrics. In the case of HfO2, the crystalline fraction causes weak spots in the oxide, whereas for the ZrO2 films the crystallites exhibit lower leakage currents compared to the amorphous matrix and leakage is mainly determined by thickness fluctuations.

  4. HfO2 Gate Dielectrics for Future Generation of CMOS Device Application

    Institute of Scientific and Technical Information of China (English)

    H.Y.Yu; J.F.Kang; Ren Chi; M.F.Li; D.L.Kwong

    2004-01-01

    The material and electrical properties of HfO2 high-k gate dielectric are reported.In the first part,the band alignment of HfO2 and (HfO2)x(Al2O3)1-x to (100)Si substrate and their thermal stability are studied by X-ray photoelectron spectroscopy and TEM.The energy gap of (HfO2)x(Al2O3)1-x,the valence band offset,and the conduction band offset between (HfO2)x(Al2O3)1-x and the Si substrate as functions of x are obtained based on the XPS results.Our XPS results also demonstrate that both the thermal stability and the resistance to oxygen diffusion of HfO2 are improved by adding Al to form Hf aluminates.In the second part,a thermally stable and high quality HfN/HfO2 gate stack is reported.Negligible changes in equivalent oxide thickness (EOT),gate leakage,and work function (close to Si mid-gap) of HfN/HfO2 gate stack are demonstrated even after 1000℃ post-metal annealing(PMA),which is attributed to the superior oxygen diffusion barrier of HfN as well as the thermal stability of the HfN/HfO2 interface.Therefore,even without surface nitridation prior to HfO2 deposition,the EOT of HfN/HfO2 gate stack has been successfully scaled down to less than 1nm after 1000℃ PMA with excellent leakage and long-term reliability.The last part demonstrates a novel replacement gate process employing a HfN dummy gate and sub-1nm EOT HfO2 gate dielectric.The excellent thermal stability of the HfN/HfO2 gate stack enables its use in high temperature CMOS processes.The replacement of HfN with other metal gate materials with work functions adequate for n- and p-MOS is facilitated by a high etch selectivity of HfN with respect to HfO2,without any degradation to the EOT,gate leakage,or TDDB characteristics of HfO2.

  5. Mixed Al and Si doping in ferroelectric HfO2 thin films

    Science.gov (United States)

    Lomenzo, Patrick D.; Takmeel, Qanit; Zhou, Chuanzhen; Chung, Ching-Chang; Moghaddam, Saeed; Jones, Jacob L.; Nishida, Toshikazu

    2015-12-01

    Ferroelectric HfO2 thin films 10 nm thick are simultaneously doped with Al and Si. The arrangement of the Al and Si dopant layers within the HfO2 greatly influences the resulting ferroelectric properties of the polycrystalline thin films. Optimizing the order of the Si and Al dopant layers led to a remanent polarization of ˜20 μC/cm2 and a coercive field strength of ˜1.2 MV/cm. Post-metallization anneal temperatures from 700 °C to 900 °C were used to crystallize the Al and Si doped HfO2 thin films. Grazing incidence x-ray diffraction detected differences in peak broadening between the mixed Al and Si doped HfO2 thin films, indicating that strain may influence the formation of the ferroelectric phase with variations in the dopant layering. Endurance characteristics show that the mixed Al and Si doped HfO2 thin films exhibit a remanent polarization greater than 15 μC/cm2 up to 108 cycles.

  6. Elastic and vibrational properties of monoclinic HfO2 from first-principles study

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    Wu, Rui; Zhou, Bo; Li, Qian; Jiang, ZhenYi; Wang, WenBo; Ma, WenYan; Zhang, XiaoDong

    2012-03-01

    The elastic and vibrational properties of crystalline monoclinic HfO2 have been investigated using density functional perturbation theory. Using the Voigt and Reuss theory, we estimate the bulk, shear and Young's modulus for polycrystalline HfO2, which agree very well with the available experimental and theoretical data. Additionally, we present a systematic analysis of the elastic properties of HfO2 polymorphs and find the trends in the elastic parameters for the HfO2 structures are consistent with those for the ZrO2 structures. The choice of exchange-correlation functional has an important effect on the results of elastic and vibrational properties. The utilization of Hartwigzen-Goedecker-Hutter type functional is a great improvement on calculation of the zone-centre phonon frequencies, and shows the root-mean-square absolute deviation of 7 cm-1 with experiments. A rigorous assignment of all the Raman modes is achieved by combining symmetry analysis with the first-principles calculations, which helps us to identify the main peak and some other features of Raman spectra. Furthermore, the Raman spectrum of HfO2 powder has been simulated for the first time, providing a theoretical benchmark for the interpretation of the unresolved problems in experimental studies.

  7. Fabrication and characteristics of high-K HfO2 gate dielectrics on n-germanium

    Institute of Scientific and Technical Information of China (English)

    Han De-Dong; Kang Jin-Feng; Liu Xiao-Yan; Sun Lei; Luo Hao; Han Ru-Qi

    2007-01-01

    This paper reports that the high-K HfO2 gate dielectrics are fabricated on n-germanium substrates by sputtering Hf on Ge and following by a furnace annealing. The impacts of sputtering ambient, annealing ambient and annealing temperature on the electrical properties of high-K HfO2 gate dielectrics on germanium substrates are investigated.Experimental results indicate that high-K HfO2 gate dielectrics on germanium substrates with good electrical characteristics are obtained, the electrical properties of high-K HfO2 gate dielectrics is strongly correlated with sputtering ambient, annealing ambient and annealing temperature.

  8. Effects of biased irradiation on charge trapping in HfO2 dielectric thin films

    Science.gov (United States)

    Mu, Yifei; Zhao, Ce Zhou; Lu, Qifeng; Zhao, Chun; Qi, Yanfei; Lam, Sang; Mitrovic, Ivona Z.; Taylor, Stephen; Chalker, Paul R.

    2017-09-01

    This paper reports the low-dose-rate radiation response of Al-HfO2/SiO2-Si MOS devices, in which the gate dielectric was formed by atomic layer deposition (ALD) with 5-nm equivalent oxide thickness. The degradation of the devices was characterized by a pulse capacitance-voltage (CV) and on-site radiation response technique under continuous gamma (γ) ray exposure at a relatively low dose rate of 0.116 rad (HfO2)/s. Compared with conventional CV measurements, the proposed measurements extract significant variations of flat-band voltage shift of the hafnium based MOS devices. The large flat-band voltage shift is mainly attributed to the radiation-induced oxide trapped charges, which are not readily compensated by bias-induced charges produced over the measurement timescales (for timescales less than 5 ms). A negative flat-band voltage shift up to -1.02 V was observed under a positive biased irradiation with the total dose up to 40 krad (HfO2) and with the electric field of 0.5 MV/cm. This is attributed to net positive charge generation in the HfO2 oxide layer. The generated charges are transported towards the HfO2/SiO2 interface, and then form effective trapped holes in the HfO2. Similarly, a positive flat-band voltage shift up to 1.1 V was observed from irradiation under negative bias with an electric field of -0.5 MV/cm. The positive shift is mainly due to the accumulation of trapped electrons. Analyses of the experimental results suggest that both hole and electron trapping can dominate the radiation response performance of the HfO2-based MOS devices depending upon the applied bias. It was also found there was no distinct border traps with irradiation in all cases.

  9. On the structural origins of ferroelectricity in HfO2 thin films

    Science.gov (United States)

    Sang, Xiahan; Grimley, Everett D.; Schenk, Tony; Schroeder, Uwe; LeBeau, James M.

    2015-04-01

    Here, we present a structural study on the origin of ferroelectricity in Gd doped HfO2 thin films. We apply aberration corrected high-angle annular dark-field scanning transmission electron microscopy to directly determine the underlying lattice type using projected atom positions and measured lattice parameters. Furthermore, we apply nanoscale electron diffraction methods to visualize the crystal symmetry elements. Combined, the experimental results provide unambiguous evidence for the existence of a non-centrosymmetric orthorhombic phase that can support spontaneous polarization, resolving the origin of ferroelectricity in HfO2 thin films.

  10. Influences of Annealing on Residual Stress and Structure of HfO2 Films

    Institute of Scientific and Technical Information of China (English)

    SHEN Yan-Ming; SHAO Shu-Ying; DENG Zhen-Xia; HE Hong-Bo; SHAO Jian-Da; FAN Zheng-Xiu

    2007-01-01

    HfO2 films are deposited on BK7 glass substrates by electron beam evaporation. The influences of annealing between 100℃ and 400℃ on residual stresses and structures of HfO2 films are studied. It is found that little differences of spectra, residual stresses and structures are obtained after annealing at lower temperatures. After annealing at higher temperatures, the spectra shift to short wavelength, the residual stress increases with the increasing annealing temperature. At the same time, the crystallite size increases and interplanar distance decreases. The variations of optical spectra and residual stress correspond to the evolutions of structures induced by annealing.

  11. Ferroelectricity of nondoped thin HfO2 films in TiN/HfO2/TiN stacks

    Science.gov (United States)

    Nishimura, Tomonori; Xu, Lun; Shibayama, Shigehisa; Yajima, Takeaki; Migita, Shinji; Toriumi, Akira

    2016-08-01

    We report on the impact of TiN interfaces on the ferroelectricity of nondoped HfO2. Ferroelectric properties of nondoped HfO2 in TiN/HfO2/TiN stacks are shown in capacitance-voltage and polarization-voltage characteristics. The Curie temperature is also estimated to be around 500 °C. The ferroelectricity of nondoped HfO2 clearly appears by thinning HfO2 film down to ˜35 nm. We directly revealed in thermal treatments that the ferroelectric HfO2 film on TiN was maintained by covering the top surface of HfO2 with TiN, while it was followed by a phase transition to the paraelectric phase in the case of the open surface of HfO2. Thus, it is concluded that the ferroelectricity in nondoped HfO2 in this study was mainly driven by both of top and bottom TiN interfaces.

  12. Enhancement of the blue photoluminescence intensity for the porous silicon with HfO2 filling into microcavities

    Science.gov (United States)

    Jiang, Ran; Du, Xianghao; Sun, Weideng; Han, Zuyin; Wu, Zhengran

    2015-10-01

    With HfO2 filled into the microcavities of the porous single-crystal silicon, the blue photoluminescence was greatly enhanced at room temperature. On one hand, HfO2 contributes to the light emission with the transitions of the defect levels for oxygen vacancy. On the other hand, the special filling-into-microcavities structure of HfO2 leads to the presence of ferroelectricity, which greatly enhances the blue emission from porous silicon. Since both HfO2 and Si are highly compatible with Si-based electronic industry, combined the low-cost and convenient process, the HfO2-filled porous Si shows a promising application prospect.

  13. Ferroelectricity in Si-doped HfO2 revealed: a binary lead-free ferroelectric.

    Science.gov (United States)

    Martin, Dominik; Müller, Johannes; Schenk, Tony; Arruda, Thomas M; Kumar, Amit; Strelcov, Evgheni; Yurchuk, Ekaterina; Müller, Stefan; Pohl, Darius; Schröder, Uwe; Kalinin, Sergei V; Mikolajick, Thomas

    2014-12-23

    Static domain structures and polarization dynamics of silicon doped HfO2 are explored. The evolution of ferroelectricity as a function of Si-doping level driving the transition from paraelectricity via ferroelectricity to antiferroelectricity is investigated. Ferroelectric and antiferroelectric properties can be observed locally on the pristine, poled and electroded surfaces, providing conclusive evidence to intrinsic ferroic behavior.

  14. Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2

    Science.gov (United States)

    Martin, Dominik; Yurchuk, Ekaterina; Müller, Stefan; Müller, Johannes; Paul, Jan; Sundquist, Jonas; Slesazeck, Stefan; Schlösser, Till; van Bentum, Ralf; Trentzsch, Martin; Schröder, Uwe; Mikolajick, Thomas

    2013-10-01

    Throughout the 22 nm technology node HfO2 is established as a reliable gate dielectric in contemporary complementary metal oxide semiconductor (CMOS) technology. The working principle of ferroelectric field effect transistors FeFET has also been demonstrated for some time for dielectric materials like Pb[ZrxTi1-x]O3 and SrBi2Ta2O9. However, integrating these into contemporary downscaled CMOS technology nodes is not trivial due to the necessity of an extremely thick gate stack. Recent developments have shown HfO2 to have ferroelectric properties, given the proper doping. Moreover, these doped HfO2 thin films only require layer thicknesses similar to the ones already in use in CMOS technology. This work will show how the incorporation of Si induces ferroelectricity in HfO2 based capacitor structures and finally demonstrate non-volatile storage in nFeFETs down to a gate length of 100 nm. A memory window of 0.41 V can be retained after 20,000 switching cycles. Retention can be extrapolated to 10 years.

  15. Growth of epitaxial orthorhombic YO1.5-substituted HfO2 thin film

    Science.gov (United States)

    Shimizu, Takao; Katayama, Kiliha; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Funakubo, Hiroshi

    2015-07-01

    YO1.5-substituted HfO2 thin films with various substitution amounts were grown on (100) YSZ substrates by the pulsed laser deposition method directly from the vapor phase. The epitaxial growth of film with different YO1.5 amounts was confirmed by the X-ray diffraction method. Wide-area reciprocal lattice mapping measurements were performed to clarify the crystal symmetry of films. The formed phases changed from low-symmetry monoclinic baddeleyite to high-symmetry tetragonal/cubic fluorite phases through an orthorhombic phase as the YO1.5 amount increased from 0 to 0.15. The additional annular bright-field scanning transmission electron microscopy indicates that the orthorhombic phase has polar structure. This means that the direct growth by vapor is of polar orthorhombic HfO2-based film. Moreover, high-temperature X-ray diffraction measurements showed that the film with a YO1.5 amount of 0.07 with orthorhombic structure at room temperature only exhibited a structural phase transition to tetragonal phase above 450 °C. This temperature is much higher than the reported maximum temperature of 200 °C to obtain ferroelectricity as well as the expected temperature for real device application. The growth of epitaxial orthorhombic HfO2-based film helps clarify the nature of ferroelectricity in HfO2-based films (186 words/200 words).

  16. Optical properties of nanocrystalline HfO2 synthesized by an auto-igniting combustion synthesis

    Directory of Open Access Journals (Sweden)

    H. Padma Kumar

    2015-03-01

    Full Text Available The optical properties of nanocrystalline HfO2 synthesized using a single-step auto-igniting combustion technique is reported. Nanocrystalline hafnium oxide having particle size of the order 10–15 nm were obtained in the present method. The nanopowder was characterized using X-ray diffraction, Fourier transform infrared and Fourier transform Raman spectroscopic studies. All these studies confirm that the phase formation is complete in the combustion synthesis and monoclinic phase [P21/c(14] of HfO2 is obtained without the presence of any impurities or additional phases. The powder morphology of the as-prepared sample was studied using transmission electron microscopy and the results were in good agreement with that of the X-ray diffraction studies. The optical constants such as refractive index, extinction coefficient, optical conductivity and the band gap were estimated from UV–vis spectroscopic techniques. The band gap of nanocrystalline HfO2 was found to be 5.1 eV and the sample shows a broad PL emission at 628 nm. It is concluded that the transitions between intermediate energy levels in the band gap are responsible for the interesting photoluminescent properties of nanocrystalline HfO2.

  17. III-Nitride grating grown on freestanding HfO2 gratings

    Directory of Open Access Journals (Sweden)

    Wu Tong

    2011-01-01

    Full Text Available Abstract We report here the epitaxial growth of III-nitride material on freestanding HfO2 gratings by molecular beam epitaxy. Freestanding HfO2 gratings are fabricated by combining film evaporation, electron beam lithography, and fast atom beam etching of an HfO2 film by a front-side silicon process. The 60-μm long HfO2 grating beam can sustain the stress change during the epitaxial growth of a III-nitride material. Grating structures locally change the growth condition and vary indium composition in the InGaN/GaN quantum wells and thus, the photoluminescence spectra of epitaxial III-nitride grating are tuned. Guided mode resonances are experimentally demonstrated in fabricated III-nitride gratings, opening the possibility to achieve the interaction between the excited light and the grating structure through guided mode resonance. PACS: 78.55.Cr; 81.65.Cf; 81.15.Hi.

  18. The conduction bands of MgO, MgS and HfO2

    NARCIS (Netherlands)

    Boer, P.K. de; Groot, R.A. de

    1998-01-01

    Electronic structure calculations for MgO, MgS and HfO2 are reported. It is shown that the conduction bands of MgO and MgS have predominantly anion character, contrary to the common picture of the conduction band being derived from cation states. In transition metal oxides, unoccupied anion states a

  19. Crystal structure and band gap determination of HfO2 thin films

    NARCIS (Netherlands)

    Cheynet, M.C.; Pokrant, S.; Tichelaar, F.D.; Rouvière, J.L.

    2007-01-01

    Valence electron energy loss spectroscopy (VEELS) and high resolution transmission electron microscopy (HRTEM) are performed on three different HfO2 thin films grown on Si (001) by chemical vapor deposition (CVD) or atomic layer deposition (ALD). For each sample the band gap (Eg) is determined by

  20. Post-Cleaning Effect on a HfO2 Gate Stack Using a NF3/NH3 Plasma.

    Science.gov (United States)

    Lee, Min-Seon; Oh, Hoon-Jung; Lee, Joo-Hee; Lee, In-Geun; Shin, Woo-Gon; Kim, Kyu-Dong; Park, Jin-Gu; Ko, Dae-Hong

    2016-05-01

    The effects of dry cleaning of a HfO2 gate stack using NF3 only and a NF3/NH3 gas mixture plasma were investigated. The plasma dry cleaning process was carried out after HfO2 deposition using an indirect down-flow capacitively coupled plasma (CCP) system. An analysis of the chemical composition of the HfO2 gate stacks by XPS indicated that fluorine was incorporated into the HfO2 films during the plasma dry cleaning. Significant changes in the HfO2 chemical composition were observed as a result of the NF3 dry cleaning, while they were not observed in this case of NF3/NH3 dry cleaning. TEM results showed that the interfacial layer (IL) between the HfO2 and Si thickness was increased by the plasma dry cleaning. However, in the case of NF3/NH3 dry cleaning using 150 W, the IL thickness was suppressed significantly compared to the sample that had not been dry cleaned. Its electrical properties were also improved, including the low gate leakage currents, and reduced EOT. Finally, the finding show that the IL thickness of the HfO2 gate stack can be controlled by using the novel NF3/NH3 dry cleaning process technique without any the significant changes in chemical composition and metal-oxide-semiconductor (MOS) capacitor characteristics.

  1. Formation of Al2O3-HfO2 Eutectic EBC Film on Silicon Carbide Substrate

    Directory of Open Access Journals (Sweden)

    Kyosuke Seya

    2015-01-01

    Full Text Available The formation mechanism of Al2O3-HfO2 eutectic structure, the preparation method, and the formation mechanism of the eutectic EBC layer on the silicon carbide substrate are summarized. Al2O3-HfO2 eutectic EBC film is prepared by optical zone melting method on the silicon carbide substrate. At high temperature, a small amount of silicon carbide decomposed into silicon and carbon. The components of Al2O3 and HfO2 in molten phase also react with the free carbon. The Al2O3 phase reacts with free carbon and vapor species of AlO phase is formed. The composition of the molten phase becomes HfO2 rich from the eutectic composition. HfO2 phase also reacts with the free carbon and HfC phase is formed on the silicon carbide substrate; then a high density intermediate layer is formed. The adhesion between the intermediate layer and the substrate is excellent by an anchor effect. When the solidification process finished before all of HfO2 phase is reduced to HfC phase, HfC-HfO2 functionally graded layer is formed on the silicon carbide substrate and the Al2O3-HfO2 eutectic structure grows from the top of the intermediate layer.

  2. The effects of layering in ferroelectric Si-doped HfO2 thin films

    Science.gov (United States)

    Lomenzo, Patrick D.; Takmeel, Qanit; Zhou, Chuanzhen; Liu, Yang; Fancher, Chris M.; Jones, Jacob L.; Moghaddam, Saeed; Nishida, Toshikazu

    2014-08-01

    Atomic layer deposited Si-doped HfO2 thin films approximately 10 nm thick are deposited with various Si-dopant concentrations and distributions. The ferroelectric behavior of the HfO2 thin films are shown to be dependent on both the Si mol. % and the distribution of Si-dopants. Metal-ferroelectric-insulator-semiconductor capacitors are shown to exhibit a tunable remanent polarization through the adjustment of the Si-dopant distribution at a constant Si concentration. Inhomogeneous layering of Si-dopants within the thin films effectively lowers the remanent polarization. A pinched hysteresis loop is observed for higher Si-dopant concentrations and found to be dependent on the Si layering distribution.

  3. Formation and disruption of conductive filaments in a HfO2/TiN structure

    Science.gov (United States)

    Brivio, S.; Tallarida, G.; Cianci, E.; Spiga, S.

    2014-09-01

    The process of the formation and disruption of nanometric conductive filaments in a HfO2/TiN structure is investigated by conductive atomic force microscopy. The preforming state evidences nonhomogeneous conduction at high fields through conductive paths, which are associated with pre-existing defects and develop into conductive filaments with a forming procedure. The disruption of the same filaments is demonstrated as well, according to a bipolar operation. In addition, the conductive tip of the microscopy is exploited to perform electrical operations on single conductive spots, which evidences that neighboring conductive filaments are not electrically independent. We propose a picture that describes the evolution of the shape of the conductive filaments in the processes of their formation and disruption, which involves the development of conductive branches from a common root; this root resides in the pre-existing defects that lay at the HfO2/TiN interface.

  4. Stable tetragonal phase and magnetic properties of Fe-doped HfO2 nanoparticles

    Directory of Open Access Journals (Sweden)

    T. S. N. Sales

    2017-05-01

    Full Text Available In this paper, the effect in structural and magnetic properties of iron doping with concentration of 20% in hafnium dioxide (HfO2 nanoparticles is investigated. HfO2 is a wide band gap oxide with great potential to be used as high-permittivity gate dielectrics, which can be improved by doping. Nanoparticle samples were prepared by sol-gel chemical method and had their structure, morphology, and magnetic properties, respectively, investigated by X-ray diffraction (XRD, transmission electron microscopy (TEM and scanning electron microscopy (SEM with electron back scattering diffraction (EBSD, and magnetization measurements. TEM and SEM results show size distribution of particles in the range from 30 nm to 40 nm with small dispersion. Magnetization measurements show the blocking temperature at around 90 K with a strong paramagnetic contribution. XRD results show a major tetragonal phase (94%.

  5. Silicon surface passivation using thin HfO2 films by atomic layer deposition

    Science.gov (United States)

    Gope, Jhuma; Vandana; Batra, Neha; Panigrahi, Jagannath; Singh, Rajbir; Maurya, K. K.; Srivastava, Ritu; Singh, P. K.

    2015-12-01

    Hafnium oxide (HfO2) is a potential material for equivalent oxide thickness (EOT) scaling in microelectronics; however, its surface passivation properties particularly on silicon are not well explored. This paper reports investigation on passivation properties of thermally deposited thin HfO2 films by atomic layer deposition system (ALD) on silicon surface. As-deposited pristine film (∼8 nm) shows better passivation with <100 cm/s surface recombination velocity (SRV) vis-à-vis thicker films. Further improvement in passivation quality is achieved with annealing at 400 °C for 10 min where the SRV reduces to ∼20 cm/s. Conductance measurements show that the interface defect density (Dit) increases with film thickness whereas its value decreases after annealing. XRR data corroborate with the observations made by FTIR and SRV data.

  6. Annealing effects on residual stress of HfO2/SiO2 multilayers

    Institute of Scientific and Technical Information of China (English)

    Yanming Shen; Zhaoxia Han; Jianda Shao; Shuying Shao; Hongbo He

    2008-01-01

    HfO2/SiO2 multilayer films were deposited on BK7 glass substrates by electron beam evaporation method.The effects of annealing at the temperature between 200 and 400℃ on residual stresses have been studied.It is found that the residual stress of as-deposited HfO2/SiO2 multilayers is compressive.It becomes tensile after annealing at 200℃,and then the value of tensile stress increases as annealing temperature increases.And cracks appear in the film because tensile stress is too large when the sample is annealed at 400℃.At the same time,the crystallite size increases and interplanar distance decreases with the increase of annealing temperature.The variation of residual stresses is corresponding with the evolution of structures.

  7. Perpendicular magnetic anisotropy of Co/Pt bilayers on ALD HfO2

    Science.gov (United States)

    Vermeulen, Bart F.; Wu, Jackson; Swerts, Johan; Couet, Sebastien; Linten, Dimitri; Radu, Iuliana P.; Temst, Kristiaan; Rampelberg, Geert; Detavernier, Christophe; Groeseneken, Guido; Martens, Koen

    2016-10-01

    Perpendicular Magnetic Anisotropy (PMA) is a key requirement for state of the art Magnetic Random Access Memories (MRAM). Currently, PMA has been widely reported in standard Magnetic Tunnel Junction material stacks using MgO as a dielectric. In this contribution, we present the first report of PMA at the interface with a high-κ dielectric grown by Atomic Layer Deposition, HfO2. The PMA appears after annealing a HfO2/Co/Pt/Ru stack in N2 with the Keff of 0.25 mJ/m2 as determined by Vibrating Sample Magnetometry. X-Ray Diffraction and Transmission Electron Microscopy show that the appearance of PMA coincides with interdiffusion and the epitaxial ordering of the Co/Pt bilayer. High-κ dielectrics are especially interesting for Voltage Control of Magnetic Anisotropy applications and are of potential interest for low-power MRAM and spintronics technologies.

  8. Epitaxial SrO interfacial layers for HfO2-Si gate stack scaling

    Science.gov (United States)

    Marchiori, C.; Frank, M. M.; Bruley, J.; Narayanan, V.; Fompeyrine, J.

    2011-01-01

    We discuss the structural and electrical properties of scaled 2 nm HfO2/SrO gate stacks. Thin SrO layers are deposited by molecular beam epitaxy onto (001) p-Si substrates as alternative passivating interfacial layers (ILs) to SiO2. X-ray photoelectron spectroscopy and transmission electron microscopy show that, despite some HfO2-SrO intermixing, the SrO IL acts as a barrier against HfxSiy and SiO2 formation during high-κ deposition. Electrical measurements on metal-oxide-semiconductor capacitors with TiN metal gates integrated in a low-temperature process flow reveal an equivalent oxide thickness of 5 Å with competitive leakage current and hysteresis and a negative flat band voltage shift, suitable for n-channel transistors.

  9. Comparison of HfAlO, HfO2/Al2O3, and HfO2 on n-type GaAs using atomic layer deposition

    Science.gov (United States)

    Lu, Bin; Lv, Hongliang; Zhang, Yuming; Zhang, Yimen; Liu, Chen

    2016-11-01

    Different high-permittivity (high-k) gate dielectric structures of HfO2, HfAlO, and HfO2/Al2O3 deposited on HF-etched n-GaAs using ALD have been investigated. It has been demonstrated that the stacked structure of HfO2/Al2O3 has the lowest interface state density of 8.12 × 1012eV-1 cm-2 due to the "self-cleaning" reaction process, but the sample of HfAlO shows much better frequency dispersion and much higher dielectric permittivity extracted from the C-V curves. The investigation reveals that the electrical properties of gate dielectrics are improved by introducing alumina into HfO2.

  10. The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film

    OpenAIRE

    Takao Shimizu; Kiliha Katayama; Takanori Kiguchi; Akihiro Akama; Konno, Toyohiko J.; Osami Sakata; Hiroshi Funakubo

    2016-01-01

    Ferroelectricity and Curie temperature are demonstrated for epitaxial Y-doped HfO2 film grown on (110) yttrium oxide-stabilized zirconium oxide (YSZ) single crystal using Sn-doped In2O3 (ITO) as bottom electrodes. The XRD measurements for epitaxial film enabled us to investigate its detailed crystal structure including orientations of the film. The ferroelectricity was confirmed by electric displacement filed – electric filed hysteresis measurement, which revealed saturated polarization of 16...

  11. Design and Fabrication of Interdigital Nanocapacitors Coated with HfO2

    Directory of Open Access Journals (Sweden)

    Gabriel González

    2015-01-01

    Full Text Available In this article nickel interdigital capacitors were fabricated on top of silicon substrates. The capacitance of the interdigital capacitor was optimized by coating the electrodes with a 60 nm layer of HfO2. An analytical solution of the capacitance was compared to electromagnetic simulations using COMSOL and with experimental measurements. Results show that modeling interdigital capacitors using Finite Element Method software such as COMSOL is effective in the design and electrical characterization of these transducers.

  12. Design and Fabrication of Interdigital Nanocapacitors Coated with HfO2

    Science.gov (United States)

    González, Gabriel; Kolosovas-Machuca, Eleazar Samuel; López-Luna, Edgar; Hernández-Arriaga, Heber; González, Francisco Javier

    2015-01-01

    In this article nickel interdigital capacitors were fabricated on top of silicon substrates. The capacitance of the interdigital capacitor was optimized by coating the electrodes with a 60 nm layer of HfO2. An analytical solution of the capacitance was compared to electromagnetic simulations using COMSOL and with experimental measurements. Results show that modeling interdigital capacitors using Finite Element Method software such as COMSOL is effective in the design and electrical characterization of these transducers. PMID:25602271

  13. Distribution of electron traps in SiO2/HfO2 nMOSFET

    Science.gov (United States)

    Xiao-Hui, Hou; Xue-Feng, Zheng; Ao-Chen, Wang; Ying-Zhe, Wang; Hao-Yu, Wen; Zhi-Jing, Liu; Xiao-Wei, Li; Yin-He, Wu

    2016-05-01

    In this paper, the principle of discharge-based pulsed I-V technique is introduced. By using it, the energy and spatial distributions of electron traps within the 4-nm HfO2 layer have been extracted. Two peaks are observed, which are located at ΔE ˜ -1.0 eV and -1.43 eV, respectively. It is found that the former one is close to the SiO2/HfO2 interface and the latter one is close to the gate electrode. It is also observed that the maximum discharge time has little effect on the energy distribution. Finally, the impact of electrical stress on the HfO2 layer is also studied. During stress, no new electron traps and interface states are generated. Meanwhile, the electrical stress also has no impact on the energy and spatial distribution of as-grown traps. The results provide valuable information for theoretical modeling establishment, material assessment, and reliability improvement for advanced semiconductor devices. Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002, 61106106, and 61474091), the New Experiment Development Funds for Xidian University, China (Grant No. SY1434), and the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry, China (Grant No. JY0600132501).

  14. Ferroelectricity and antiferroelectricity of doped thin HfO2-based films.

    Science.gov (United States)

    Park, Min Hyuk; Lee, Young Hwan; Kim, Han Joon; Kim, Yu Jin; Moon, Taehwan; Kim, Keum Do; Müller, Johannes; Kersch, Alfred; Schroeder, Uwe; Mikolajick, Thomas; Hwang, Cheol Seong

    2015-03-18

    The recent progress in ferroelectricity and antiferroelectricity in HfO2-based thin films is reported. Most ferroelectric thin film research focuses on perovskite structure materials, such as Pb(Zr,Ti)O3, BaTiO3, and SrBi2Ta2O9, which are considered to be feasible candidate materials for non-volatile semiconductor memory devices. However, these conventional ferroelectrics suffer from various problems including poor Si-compatibility, environmental issues related to Pb, large physical thickness, low resistance to hydrogen, and small bandgap. In 2011, ferroelectricity in Si-doped HfO2 thin films was first reported. Various dopants, such as Si, Zr, Al, Y, Gd, Sr, and La can induce ferro-electricity or antiferroelectricity in thin HfO2 films. They have large remanent polarization of up to 45 μC cm(-2), and their coercive field (≈1-2 MV cm(-1)) is larger than conventional ferroelectric films by approximately one order of magnitude. Furthermore, they can be extremely thin (5 eV). These differences are believed to overcome the barriers of conventional ferroelectrics in memory applications, including ferroelectric field-effect-transistors and three-dimensional capacitors. Moreover, the coupling of electric and thermal properties of the antiferroelectric thin films is expected to be useful for various applications, including energy harvesting/storage, solid-state-cooling, and infrared sensors.

  15. Determination of complex dielectric functions at HfO(2)/Si interface by using STEM-VEELS.

    Science.gov (United States)

    Park, Jucheol; Yang, Mino

    2009-04-01

    The complex dielectric functions and refractive index of atomic layer deposited HfO(2) were determined by the line scan method of the valence electron energy loss spectrum (VEELS) in a scanning transmission electron microscope (STEM). The complex dielectric functions and dielectric constant of monoclinic HfO(2) were calculated by the density functional theory (DFT) method. The resulting two dielectric functions were relatively well matched. On the other hand, the refractive index of HfO(2) was measured as 2.18 by VEELS analysis and 2.1 by DFT calculation. The electronic structure of HfO(2) was revealed by the comparison of the inter-band transition strength, obtained by STEM-VEELS, with the density of states (DOS) calculated by DFT calculation.

  16. Optical properties of a HfO2/Si stack with a trace amount of nitrogen incorporation

    Institute of Scientific and Technical Information of China (English)

    Li Ye; Jiang Tingting; Sun Qingqing; Wang Pengfei; Ding Shijin; Zhang Wei

    2012-01-01

    HfO2 films were deposited by atomic layer deposition through alternating pulsing of Hf[N(C2H5)(CH3)]4 and H2O2.A trace amount of nitrogen was incorporated into the HfO2 through ammonia annealing.The composition,the interface stability of the HfO2/Si stack and the optical properties of the annealed films were analyzed to investigate the property evolution of HfO2 during thermal treatment.With a nitrogen concentration increase from 1.41 to 7.45%,the bandgap of the films decreased from 5.82 to 4.94 eV.

  17. The Hydrothermal Autoclave Synthesis of the Nanopowders of the Refractory ZrO2 and HfO2 Oxides

    Directory of Open Access Journals (Sweden)

    N.F. Karpovich

    2015-12-01

    Full Text Available The nanopowders of the transition metal ZrO2 and HfO2 oxides were obtained by the hydrothermal autoclave synthesis. The nanoparticles possess a rounded shape and a size range of 40 to 80 nm (ZrO2, of 10 to 40 nm (HfO2. X-ray diffraction analysis and electron microscopy show that the structure of the nanoparticles is monoclinic.

  18. Study on absorbance and laser damage threshold of HfO2 films prepared by ion-assisted reaction deposition

    Institute of Scientific and Technical Information of China (English)

    Dawei Zhang(张大伟); Shuhai Fan(范树海); Weidong Gao(高卫东); Hongbo He(贺洪波); Yingjian Wang(王英剑); Jianda Shao(邵建达); Zhengxiu Fan(范正修); Haojie Sun(孙浩杰)

    2004-01-01

    Using a new kind of EH1000 ion source, hafnium dioxide (HfO2) films are deposited with different deposition techniques and different conditions. The absorbance and the laser damage threshold of these films have been measured and studied. By comparing these characteristics, one can conclude that under right conditions, such as high partial pressure of oxygen and right kind of ion source, the ion-assisted reaction deposition can prepare HfO2 films with higher laser induced damage threshold.

  19. A combined ab initio and Franck-Condon factor simulation study on the photodetachment spectrum of HfO2-.

    Science.gov (United States)

    Mok, Daniel K W; Lee, Edmond P F; Chau, Foo-Tim; Dyke, John M

    2008-12-28

    Restricted-spin coupled-cluster single-double plus perturbative triple excitation {RCCSD(T)} potential energy functions (PEFs) of the X[combining tilde]1A1 state of HfO2 and the X[combining tilde]2A1 state of HfO2- were computed, employing the quasi-relativistic effective core potential, ECP60MWB, and an associated contracted [13s6p6d4f3g2h] basis set designed for Hf, and the augmented correlation-consistent polarized valence quadruple-zeta (aug-cc-pVQZ) basis set for O. Based on the differences between the computed r0 and re geometrical parameters obtained from the PEF, and available experimentally derived r0 geometrical parameters of the X[combining tilde]1A1 state of HfO2, the experimental re geometrical parameters of the X[combining tilde]1A1 state of HfO2 were estimated as:-re(HfO)=1.7751 A and thetae(OHfO)=107.37 degrees. In addition, Franck-Condon factors for the HfO2 (X[combining tilde]1A1)+eVDEs) to these neutral states from the X[combining tilde]2A1 state of HfO2-.

  20. HfO 2 -based ferroelectric modulator of terahertz waves with graphene metamaterial

    Science.gov (United States)

    Jiang, Ran; Wu, Zheng-Ran; Han, Zu-Yin; Jung, Hyung-Suk

    2016-10-01

    Tunable modulations of terahertz waves in a graphene/ferroelectric-layer/silicon hybrid structure are demonstrated at low bias voltages. The modulation is due to the creation/elimination of an extra barrier in Si layer in response to the polarization in the ferroelectric Si:HfO2 layer. Considering the good compatibility of HfO2 with the Si-based semiconductor process, the highly tunable characteristics of the graphene metamaterial device under ferroelectric effect open up new avenues for graphene-based high performance integrated active photonic devices compatible with the silicon technology. Project supported by the National Natural Science Foundation of China (Grant No. 11374182).

  1. Pulsed laser deposition of HfO2 thin films on indium zinc oxide: Band offsets measurements

    Science.gov (United States)

    Craciun, D.; Craciun, V.

    2017-04-01

    One of the most used dielectric films for amorphous indium zinc oxide (IZO) based thin films transistor is HfO2. The estimation of the valence band discontinuity (ΔEV) of HfO2/IZO heterostructure grown using the pulsed laser deposition technique, with In/(In + Zn) = 0.79, was obtained from X-ray photoelectron spectroscopy (XPS) measurements. The binding energies of Hf 4d5, Zn 2p3 and In 3d5 core levels and valence band maxima were measured for thick pure films and for a very thin HfO2 film deposited on a thick IZO film. A value of ΔEV = 1.75 ± 0.05 eV was estimated for the heterostructure. Taking into account the measured HfO2 and IZO optical bandgap values of 5.50 eV and 3.10 eV, respectively, a conduction band offset ΔEC = 0.65 ± 0.05 eV in HfO2/IZO heterostructure was then obtained.

  2. Thermal Conductivity and Stability of HfO2-Y2O3 and La2Zr2O7 Evaluated for 1650 Deg C Thermal/Environmental Barrier Coating Applications

    Science.gov (United States)

    Zhu, Dong-Ming; Bansal, Narottam P.; Miller, Robert A.

    2003-01-01

    HfO2-Y2O3 and La2Zr2O7 are candidate thermal and environmental barrier coating (T/EBC) materials for gas turbine ceramic matrix composite (CMC) combustor applications because of their relatively low thermal conductivity and high temperature capability. In this paper, thermal conductivity and high temperature stability of hot-pressed and plasma sprayed specimens with representative partially-stabilized and fully-cubic HfO2-Y2O3 compositions and La2Zr2O7 were evaluated at temperatures up to 1700 C using a steady-state laser heat-flux technique. Sintering behavior of the plasmasprayed coatings was determined by monitoring the thermal conductivity increases during a 20-hour test period at various temperatures. Durability and failure mechanisms of the HfO2-Y2O3 and La2Zr2O7 coatings on mullite/SiC hexoloy or SiC/SiC CMC substrates were investigated at 1650 C under thermal gradient cyclic conditions. Coating design and testing issues for the 1650 C thermal/environmental barrier coating applications are also discussed.

  3. Ferroelectric HfO2-based materials for next-generation ferroelectric memories

    Science.gov (United States)

    Fan, Zhen; Chen, Jingsheng; Wang, John

    2016-05-01

    Ferroelectric random access memory (FeRAM) based on conventional ferroelectric perovskites, such as Pb(Zr,Ti)O3 and SrBi2Ta2O9, has encountered bottlenecks on memory density and cost, because those conventional perovskites suffer from various issues mainly including poor complementary metal-oxide-semiconductor (CMOS)-compatibility and limited scalability. Next-generation cost-efficient, high-density FeRAM shall therefore rely on a material revolution. Since the discovery of ferroelectricity in Si:HfO2 thin films in 2011, HfO2-based materials have aroused widespread interest in the field of FeRAM, because they are CMOS-compatible and can exhibit robust ferroelectricity even when the film thickness is scaled down to below 10 nm. A review on this new class of ferroelectric materials is therefore of great interest. In this paper, the most appealing topics about ferroelectric HfO2-based materials including origins of ferroelectricity, advantageous material properties, and current and potential applications in FeRAM, are briefly reviewed.

  4. The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film

    Science.gov (United States)

    Shimizu, Takao; Katayama, Kiliha; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Sakata, Osami; Funakubo, Hiroshi

    2016-09-01

    Ferroelectricity and Curie temperature are demonstrated for epitaxial Y-doped HfO2 film grown on (110) yttrium oxide-stabilized zirconium oxide (YSZ) single crystal using Sn-doped In2O3 (ITO) as bottom electrodes. The XRD measurements for epitaxial film enabled us to investigate its detailed crystal structure including orientations of the film. The ferroelectricity was confirmed by electric displacement filed – electric filed hysteresis measurement, which revealed saturated polarization of 16 μC/cm2. Estimated spontaneous polarization based on the obtained saturation polarization and the crystal structure analysis was 45 μC/cm2. This value is the first experimental estimations of the spontaneous polarization and is in good agreement with the theoretical value from first principle calculation. Curie temperature was also estimated to be about 450 °C. This study strongly suggests that the HfO2-based materials are promising for various ferroelectric applications because of their comparable ferroelectric properties including polarization and Curie temperature to conventional ferroelectric materials together with the reported excellent scalability in thickness and compatibility with practical manufacturing processes.

  5. Morphology and Photoluminescence of HfO2Obtained by Microwave-Hydrothermal

    Directory of Open Access Journals (Sweden)

    Cavalcante LS

    2009-01-01

    Full Text Available Abstract In this letter, we report on the obtention of hafnium oxide (HfO2 nanostructures by the microwave-hydrothermal method. These nanostructures were analyzed by X-ray diffraction (XRD, field-emission gum scanning electron microscopy (FEG-SEM, transmission electron microscopy (TEM, energy dispersive X-ray spectrometry (EDXS, ultraviolet–visible (UV–vis spectroscopy, and photoluminescence (PL measurements. XRD patterns confirmed that this material crystallizes in a monoclinic structure. FEG-SEM and TEM micrographs indicated that the rice-like morphologies were formed due to an increase in the effective collisions between the nanoparticles during the MH processing. The EDXS spectrum was used to verify the chemical compositional of this oxide. UV–vis spectrum revealed that this material have an indirect optical band gap. When excited with 488 nm wavelength at room temperature, the HfO2nanostructures exhibited only one broad PL band with a maximum at around 548 nm (green emission.

  6. Theoretical prediction of ion conductivity in solid state HfO2

    Institute of Scientific and Technical Information of China (English)

    Zhang Wei; Chen Wen-Zhou; Sun Jiu-Yu; Jiang Zhen-Yi

    2013-01-01

    A theoretical prediction of ion conductivity for solid state HfO2 is carried out in analogy to ZrO2 based on the density functional calculation.Geometric and electronic structures of pure bulks exhibit similarity for the two materials.Negative formation enthalpy and negative vacancy formation energy are found for YSH (yttria-stabilized hafnia) and YSZ (yttriastabilized zirconia),suggesting the stability of both materials.Low activation energies (below 0.7 eV) of diffusion are found in both materials,and YSH's is a little higher than that of YSZ.In addition,for both HfO2 and ZrO2,the supercells with native oxygen vacancies are also studied.The so-called defect states are observed in the supercells with neutral and +1 charge native vacancy but not in the +2 charge one.It can give an explanation to the relatively lower activation energies of yttria-doped oxides and +2 charge vacancy supercells.A brief discussion is presented to explain the different YSH ion conductivities in the experiment and obtained by us,and we attribute this to the different ion vibrations at different temperatures.

  7. HfO2 and SiO2 as barriers in magnetic tunneling junctions

    Science.gov (United States)

    Shukla, Gokaran; Archer, Thomas; Sanvito, Stefano

    2017-05-01

    SiO2 and HfO2 are both high-k, wide-gap semiconductors, currently used in the microelectronic industry as gate barriers. Here we investigate whether the same materials can be employed to make magnetic tunnel junctions, which in principle can be amenable for integration in conventional Si technology. By using a combination of density functional theory and the nonequilibrium Green's functions method for quantum transport we have studied the transport properties of Co [0001 ] /SiO2[001 ] /Co [0001 ] and Fe [001 ] /HfO2[001 ] /Fe [001 ] junctions. In both cases we found a quite large magnetoresistance, which is explained through the analysis of the real band structure of the magnets and the complex one of the insulator. We find that there is no symmetry spin filtering for the Co-based junction since the high transmission Δ2' band crosses the Fermi level, EF, for both spin directions. However, the fact that Co is a strong ferromagnet makes the orbital contribution to the two Δ2' spin subbands different, yielding magnetoresistance. In contrast for the Fe-based junction symmetry filtering is active for an energy window spanning between the Fermi level and 1 eV below EF, with Δ1 symmetry contributing to the transmission.

  8. Structural and electrical properties of metal ferroelectric insulator semiconductor structure of Al/SrBi2Ta2O9/HfO2/Si using HfO2 as buffer layer

    Science.gov (United States)

    Roy, A.; Dhar, A.; Bhattacharya, D.; Ray, S. K.

    2008-05-01

    Ferroelectric SrBi2Ta2O9 (SBT) thin films have been deposited by the radio-frequency magnetron sputtering technique on bare p-Si as well as on HfO2 insulating buffer p-Si. XRD patterns revealed the formation of a well-crystallized SBT perovskite thin film on the HfO2 buffer layer. The electrical properties of the metal-ferroelectric-insulator-semiconductor (MFIS) structure were characterized by varying thicknesses of the HfO2 layer. The MFIS structure exhibits a maximum clockwise C-V memory window of 1.60 V when the thickness of the HfO2 layer was 12 nm with a lower leakage current density of 6.20 × 10-7 A cm-2 at a positive applied voltage of 7 V. However, the memory window reaches a maximum value of 0.7 V at a bias voltage of ±5 and then decreases due to charge injection in the case of the insulating buffer layer thickness of 3 nm. The density of oxide trapped charges at/near the buffer layer-ferroelectric interface is studied by the voltage stress method. Capacitance-voltage (C-V) and leakage current density (J-V) characteristics of the Al/SBT/HfO2/Si(1 0 0) capacitor indicate that the introduction of the HfO2 buffer layer prevents interfacial diffusion between the SBT thin film and the Si substrate effectively and improves the interface quality. Furthermore, the Al/SBT/HfO2/Si structures exhibit excellent retention characteristics, the high and low capacitance values clearly distinguishable for over 1 h and 30 min. This shows that the proposed Al/SrBi2Ta2O9/HfO2/Si structure is ideally suitable for high performance ferroelectric memories.

  9. Correlation of nanochemistry and electrical properties in HfO2 films grown by metalorganic molecular-beam epitaxy

    Science.gov (United States)

    Moon, Tae-Hyoung; Ham, Moon-Ho; Myoung, Jae-Min

    2005-03-01

    We present the annealing effects on nanochemistry and electrical properties in HfO2 dielectrics grown by metalorganic molecular-beam epitaxy. After the postannealing treatment of HfO2 films in the temperature range of 600-800°C, the thicknesses and chemical states of the films were examined by high-resolution transmission electron microscopy and angle-resolved x-ray photoelectron spectroscopy. By comparing the line shapes of core-level spectra for the samples with different annealing temperatures, the concentrations of SiO and Hf-silicate with high dielectric constant are found to be highest for HfO2 film annealed at 700°C. This result supports that the accumulation capacitance of the sample annealed at 700°C is not deteriorated in spite of a steep increase in interfacial layer thickness compared with that of the sample annealed at 600°C.

  10. The effect of Gd doping on the atomic and electronic structure of HfO2 thin films.

    Science.gov (United States)

    Ketsman, Ihor; Sokolov, Andrei; Belashchenko, Kirill; Dowben, Peter; Losovyj, Yaroslav; Tang, Jinke; Wang, Zhenjun

    2008-03-01

    HfO2 is a promising oxide for many applications, including high-k gate dielectric for CMOS devices. In addition, Gd-doped HfO2 could lead to a dilute magnetic semiconductor and provide an efficient neutron detection medium due to huge neutron absorption cross section of Gd. Gd-doped HfO2 films deposited on both p-type and n-type silicon by PLD retain monoclinic phase at small doping levels, but can be stabilized in fluorite phase by increased doping [1]. At small doping levels, photoemission measurements indicate n-type character of the films as a result of overcompensation with oxygen vacancies. Depending on a doping level, the films form heterojunctions with good rectifying properties on n- or p-type silicon. Preliminary results show the potential ability of the formed diode structures to detect neutrons. [1] Ya.B.Losovyj, I.Ketsman et al.,APL, 91, 132908, (2007)

  11. Electrical properties and reliability of HfO2 gate-dielectric MOS capacitors with trichloroethylene surface pretreatment

    Institute of Scientific and Technical Information of China (English)

    Xu Jing-Ping; Chen Wei-Bing; Lai Pui-To; Li Yan-Ping; Chan Chu-Lok

    2007-01-01

    Trichloroethylene (TCE) pretreatment of Si surface prior to HfO2 deposition is employed to fabricate HfO2 gatedielectric MOS capacitors. Influence of this processing procedure on interlayer growth, HfO2/Si interface properties,gate-oxide leakage and device reliability is investigated. Among the surface pretreatments in NH3, NO, N2O and TCE ambients, the TCE pretreatment gives the least interlayer growth, the lowest interface-state density, the smallest gate leakage and the highest reliability. All these improvements should be ascribed to the passivation effects of Cl2 and Hclon the structural defects in the interlayer and at the interface, and also their gettering effects on the ion contamination in the gate dielectric.

  12. Contamination process and laser-induced damage of HfO2/SiO2 coatings in vacuum

    Institute of Scientific and Technical Information of China (English)

    Ping Ma; Feng Pan; Songlin Chen; Zhen Wang; Jianping Hu; Qinghua Zhang; Jianda Shao

    2009-01-01

    The performances of HfO2/SiO2 single- and multi-layer coatings in vacuum influenced by contamination are studied. The surface morphology, the transmittance spectrum, and the laser-induced damage threshold are investigated. The results show that the contamination in vacuum mainly comes from the vacuum system and the contamination process is different for the HfO2 and SiO2 films. The laser-induced damage experiments at 1064 nm in vacuum show that the damage resistance of the coatings will decrease largely due to the organic contamination.

  13. Study on absorbance and laser damage threshold of HfO2 films prepared by ion-assisted reaction deposition

    Institute of Scientific and Technical Information of China (English)

    张大伟; 范树海; 高卫东; 贺洪波; 王英剑; 邵建达; 范正修; 孙浩杰

    2004-01-01

    Using a new kind of EH1000 ion source, hafnium dioxide (HfO2) films are deposited with different depo sition techniques and different conditions. The absorbance and the laser damage threshold of these films have been measured and studied. By comparing these characteristics, one can conclude that under right conditions, such as high partial pressure of oxygen and right kind of ion source, the ion-assisted reaction deposition can prepare HfO2 films with higher laser induced damage threshold.

  14. Potential imaging of Si /HfO2/polycrystalline silicon gate stacks: Evidence for an oxide dipole

    Science.gov (United States)

    Ludeke, R.; Narayanan, V.; Gusev, E. P.; Cartier, E.; Chey, S. J.

    2005-03-01

    Surface potential profiles of the junction area of a cleaved n-Si(100)/HfO2/p +-polycrystalline silicon (poly-Si) gate stack reveal a dipole potential in the oxide, hole trapping at the HfO2/poly-Si interface, with the Fermi level ˜0.4eV below the Si conduction bandedge and enhanced and inhomogeneous hole depletion in the p +-poly-Si. The dipole accounts for band bending reduction in the n-Si and is consistent with flatband voltage shifts reported for similar gate stacks.

  15. Structural and dielectric properties of amorphous ZrO2 and HfO2

    Science.gov (United States)

    Ceresoli, Davide; Vanderbilt, David

    2006-09-01

    Zirconia (ZrO2) and hafnia (HfO2) are leading candidates for replacing SiO2 as the gate insulator in complementary metal-oxide semiconductor technology. Amorphous versions of these materials ( a-ZrO2 and a-HfO2 ) can be grown as metastable phases on top of a silicon buffer; while they tend to recrystallize during subsequent annealing steps, they would otherwise be of considerable interest because of the promise they hold for improved uniformity and electrical passivity. In this work, we report our theoretical studies of a-ZrO2 and a-HfO2 by first-principles density-functional methods. We construct realistic amorphous models using the “activation-relaxation” technique of Barkema and Mousseau. The structural, vibrational, and dielectric properties of the resulting models are analyzed in detail. The overall average dielectric constant is computed and found to be comparable to that of the monoclinic phase.

  16. First principle simulations on the effects of oxygen vacancy in HfO2-based RRAM

    Directory of Open Access Journals (Sweden)

    Yuehua Dai

    2015-01-01

    Full Text Available HfO2-based resistive random access memory (RRAM takes advantage of oxygen vacancy (V o defects in its principle of operation. Since the change in resistivity of the material is controlled by the level of oxygen deficiency in the material, it is significantly important to study the performance of oxygen vacancies in formation of conductive filament. Excluding effects of the applied voltage, the Vienna ab initio simulation package (VASP is used to investigate the orientation and concentration mechanism of the oxygen vacancies based on the first principle. The optimal value of crystal orientation [010] is identified by means of the calculated isosurface plots of partial charge density, formation energy, highest isosurface value, migration barrier, and energy band of oxygen vacancy in ten established orientation systems. It will effectively influence the SET voltage, forming voltage, and the ON/OFF ratio of the device. Based on the results of orientation dependence, different concentration models are established along crystal orientation [010]. The performance of proposed concentration models is evaluated and analyzed in this paper. The film is weakly conductive for the samples deposited in a mixture with less than 4.167at.% of V o contents, and the resistive switching (RS phenomenon cannot be observed in this case. The RS behavior improves with an increase in the V o contents from 4.167at.% to 6.25at.%; nonetheless, it is found difficult to switch to a stable state. However, a higher V o concentration shows a more favorable uniformity and stability for HfO2-based RRAM.

  17. Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2014-01-01

    Full Text Available This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using hafnium oxide (HfO2 gate dielectric material. HfO2 is an attractive candidate as a high-κ dielectric material for gate oxide because it has great potential to exhibit superior electrical properties with a high drive current. In the process of integrating the gate dielectric and IGZO thin film, postannealing treatment is an essential process for completing the chemical reaction of the IGZO thin film and enhancing the gate oxide quality to adjust the electrical characteristics of the TFTs. However, the hafnium atom diffused the IGZO thin film, causing interface roughness because of the stability of the HfO2 dielectric thin film during high-temperature annealing. In this study, the annealing temperature was optimized at 200°C for a HfO2 gate dielectric TFT exhibiting high mobility, a high ION/IOFF ratio, low IOFF current, and excellent subthreshold swing (SS.

  18. Coexistence of different charge states in Ta-doped monoclinic HfO2: Theoretical and experimental approaches

    DEFF Research Database (Denmark)

    Taylor, M.A.; Alonso, R.E.; Errico, L.A.

    2010-01-01

    A combination of experiments and ab initio quantum-mechanical calculations has been applied to examine hyperfine interactions in Ta-doped hafnium dioxide. Although the properties of monoclinic HfO2 have been the subject of several earlier studies, some aspects remain open. In particular, time dif...

  19. Enhanced resistive switching performance for bilayer HfO2/TiO2 resistive random access memory

    Science.gov (United States)

    Ye, Cong; Deng, Tengfei; Zhang, Junchi; Shen, Liangping; He, Pin; Wei, Wei; Wang, Hao

    2016-10-01

    We prepared bilayer HfO2/TiO2 resistive random accessory memory (RRAM) using magnetron sputtering on an ITO/PEN flexible substrate. The switching voltages (V SET and V RESET) were smaller for the Pt/HfO2/TiO2/ITO device than for a Pt/HfO2/ITO memory device. The insertion of a TiO2 layer in the switching layer was inferred to act as an oxygen reservoir to reduce the switching voltages. In addition, greatly improved uniformity was achieved, which showed the coefficient of the variations of V SET and V RESET to be 9.90% and 6.35% for the bilayer structure RRAM. We deduced that occurrence of conductive filament connection/rupture at the interface of the HfO2 and TiO2, in combination with the HfO2 acting as a virtual cathode, led to the improved uniformity. A multilevel storage capability can be obtained by varying the stop voltage in the RESET process for bilayer HfO2/TiO2 RRAM. By analyzing the current conduction mechanism, we demonstrated that the multilevel high resistance state (HRS) was attributable to the increased barrier height when the stop voltage was increased.

  20. Formation of (111) orientation-controlled ferroelectric orthorhombic HfO2 thin films from solid phase via annealing

    Science.gov (United States)

    Mimura, Takanori; Katayama, Kiliha; Shimizu, Takao; Uchida, Hiroshi; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Sakata, Osami; Funakubo, Hiroshi

    2016-08-01

    0.07YO1.5-0.93HfO2 (YHO7) films were prepared on various substrates by pulse laser deposition at room temperature and subsequent heat treatment to enable a solid phase reaction. (111)-oriented 10 wt. % Sn-doped In2O3(ITO)//(111) yttria-stabilized zirconia, (111)Pt/TiOx/SiO2/(001)Si substrates, and (111)ITO/(111)Pt/TiOx/SiO2/(001)Si substrates were employed for film growth. In this study, X-ray diffraction measurements including θ-2θ measurements, reciprocal space mappings, and pole figure measurements were used to study the films. The film on (111)ITO//(111)yttria-stabilized zirconia was an (111)-orientated epitaxial film with ferroelectric orthorhombic phase; the film on (111)ITO/(111)Pt/TiOx/SiO2/(001)Si was an (111)-oriented uniaxial textured film with ferroelectric orthorhombic phase; and no preferred orientation was observed for the film on the (111)Pt/TiOx/SiO2/(001)Si substrate, which does not contain ITO. Polarization-hysteresis measurements confirmed that the films on ITO covered substrates had saturated ferroelectric hysteresis loops. A remanent polarization (Pr) of 9.6 and 10.8 μC/cm2 and coercive fields (Ec) of 1.9 and 2.0 MV/cm were obtained for the (111)-oriented epitaxial and uniaxial textured YHO7 films, respectively. These results demonstrate that the (111)-oriented ITO bottom electrodes play a key role in controlling the orientation and ferroelectricity of the phase formation of the solid films deposited at room temperature.

  1. Thermomechanical analysis of nodule damage in HfO2/SiO2 multilayer coatings

    Institute of Scientific and Technical Information of China (English)

    Yongguang Shan; Hongbo He; C haoyang Wei; Ying Wang; Yuan'an Zhao

    2011-01-01

    Samples with nodular defects grown from gold nanoparticles are prepared, and laser-induced damage tests are conducted on them. Nodular defects, which are in critical state of damage, are cross-sectioned by focusing on the ion beam and by imaging using a field emission scanning electron microscope. The cross-sectional profile shows that cracks are generated and propagated along the nodular boundaries and the HfO2/SiO2 interface, or are even melted. The thermomechanical process induced by the heated seed region is analyzed based on the calculations of temperature increase and thermal stress. The numerical results give the critical temperature of the seed region and the thermal stress for crack generation, irradiated with threshold fluence. The numerical results are in good agreement with the experimental ones.%Samples with nodular defects grown from gold nanoparticles are prepared,and laser induced damage tests are conducted on them.Nodular defects,which are in critical state of damage,are cross-sectioned by focusing on the ion beam and by imaging using a field emission scanning electron microscope.The crosssectional profile shows that cracks are generated and propagated along the nodular boundaries and the HfO2/SiO2 interface,or are even melted.The thermomechanical process induced by the heated seed region is analyzed based on the calculations of temperature increase and thermal stress.The numerical results give the critical temperature of the seed region and the thermal stress for crack generation,irradiated with threshold fluence.The numerical results are in good agreement with the experimental ones.Nodular defect,a typical defect in multilayer coatings,largely limits the improvement of the laser-induced damage threshold (LIDT) in the nanosecond regime and thus has been widely investigated.Electric field enhancement in the nodule,induced by the microlens effect of the dome structure of nodular defects,is an important factor in reducing the LIDT[1-5].Recently,Liu et al.

  2. Phase Stability and Thermal Conductivity of Composite Environmental Barrier Coatings on SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Benkel, Samantha; Zhu, Dongming

    2011-01-01

    Advanced environmental barrier coatings are being developed to protect SiC/SiC ceramic matrix composites in harsh combustion environments. The current coating development emphasis has been placed on the significantly improved cyclic durability and combustion environment stability in high-heat-flux and high velocity gas turbine engine environments. Environmental barrier coating systems based on hafnia (HfO2) and ytterbium silicate, HfO2-Si nano-composite bond coat systems have been processed and their stability and thermal conductivity behavior have been evaluated in simulated turbine environments. The incorporation of Silicon Carbide Nanotubes (SiCNT) into high stability (HfO2) and/or HfO2-silicon composite bond coats, along with ZrO2, HfO2 and rare earth silicate composite top coat systems, showed promise as excellent environmental barriers to protect the SiC/SiC ceramic matrix composites.

  3. Growth and properties of hafnicone and HfO(2)/hafnicone nanolaminate and alloy films using molecular layer deposition techniques.

    Science.gov (United States)

    Lee, Byoung H; Anderson, Virginia R; George, Steven M

    2014-10-08

    Molecular layer deposition (MLD) of the hafnium alkoxide polymer known as "hafnicone" was grown using sequential exposures of tetrakis(dimethylamido) hafnium (TDMAH) and ethylene glycol (EG) as the reactants. In situ quartz crystal microbalance (QCM) experiments demonstrated self-limiting reactions and linear growth versus the number of TDMAH/EG reaction cycles. Ex situ X-ray reflectivity (XRR) analysis confirmed linear growth and measured the density of the hafnicone films. The hafnicone growth rates were temperature-dependent and decreased from 1.2 Å per cycle at 105 °C to 0.4 Å per cycle at 205 °C. The measured density was ∼3.0 g/cm(3) for the hafnicone films at all temperatures. Transmission electron microscopy images revealed very uniform and conformal hafnicone films. The XRR studies also showed that the hafnicone films were very stable with time. Nanoindentation measurements determined that the elastic modulus and hardness of the hafnicone films were 47 ± 2 and 2.6 ± 0.2 GPa, respectively. HfO2/hafnicone nanolaminate films also were fabricated using HfO2 atomic layer deposition (ALD) and hafnicone MLD at 145 °C. The in situ QCM measurements revealed that HfO2 ALD nucleation on the hafnicone MLD surface required at least 18 TDMAH/H2O cycles. Hafnicone alloys were also fabricated by combining HfO2 ALD and hafnicone MLD at 145 °C. The composition of the hafnicone alloy was varied by adjusting the relative number of TDMAH/H2O ALD cycles and TDMAH/EG MLD cycles in the reaction sequence. The electron density changed continuously from 8.2 × 10(23) e(-)/cm(3) for pure hafnicone MLD films to 2.4 × 10(24) e(-)/cm(3) for pure HfO2 ALD films. These hafnicone films and the HfO2/hafnicone nanolaminates and alloys may be useful for flexible thin-film devices.

  4. Gas-phase reaction studies of dipositive hafnium and hafnium oxide ions: generation of the peroxide HfO2(2+).

    Science.gov (United States)

    Lourenço, Célia; Michelini, Maria del Carmen; Marçalo, Joaquim; Gibson, John K; Oliveira, Maria Conceição

    2012-12-27

    Fourier transform ion cyclotron resonance mass spectrometry was used to characterize the gas-phase reactivity of Hf dipositive ions, Hf(2+)and HfO(2+), toward several oxidants: thermodynamically facile O-atom donor N(2)O, ineffective donor CO, and intermediate donors O(2), CO(2), NO, and CH(2)O. The Hf(2+) ion exhibited electron transfer with N(2)O, O(2), NO, and CH(2)O, reflecting the high ionization energy of Hf(+). The HfO(2+) ion was produced by O-atom transfer to Hf(2+) from N(2)O, O(2), and CO(2), and the HfO(2)(2+) ion by O-atom transfer to HfO(2+) from N(2)O; these reactions were fairly efficient. Density functional theory revealed the structure of HfO(2)(2+) as a peroxide. The HfO(2)(2+) ion reacted by electron transfer with N(2)O, CO(2), and CO to give HfO(2)(+). Estimates were made for the second ionization energies of Hf (14.5 ± 0.5 eV), HfO (14.3 ± 0.5 eV), and HfO(2) (16.2 ± 0.5 eV), and also for the bond dissociation energies, D[Hf(2+)-O] = 686 ± 69 kJ mol(-1) and D[OHf(2+)-O] = 186 ± 98 kJ mol(-1). The computed bond dissociation energies, 751 and 270 kJ mol(-1), respectively, are within these experimental ranges. Additionally, it was found that HfO(2)(2+) oxidized CO to CO(2) and is thus a catalyst in the oxidation of CO by N(2)O and that Hf(2+) activates methane to produce a carbene, HfCH(2)(2+).

  5. Mechanistic Insight into the Stability of HfO2-Coated MoS2 Nanosheet Anodes for Sodium Ion Batteries

    KAUST Repository

    Ahmed, Bilal

    2015-06-01

    It is demonstrated for the first time that surface passivation of 2D nanosheets of MoS2 by an ultrathin and uniform layer of HfO2 can significantly improve the cyclic performance of sodium ion batteries. After 50 charge/discharge cycles, bare MoS2 and HfO2 coated MoS2 electrodes deliver the specific capacity of 435 and 636 mAh g-1, respectively, at current density of 100 mA g-1. These results imply that batteries using HfO2 coated MoS2 anodes retain 91% of the initial capacity; in contrast, bare MoS2 anodes retain only 63%. Also, HfO2 coated MoS2 anodes show one of the highest reported capacity values for MoS2. Cyclic voltammetry and X-ray photoelectron spectroscopy results suggest that HfO2 does not take part in electrochemical reaction. The mechanism of capacity retention with HfO2 coating is explained by ex situ transmission electron microscope imaging and electrical impedance spectroscopy. It is illustrated that HfO2 acts as a passivation layer at the anode/electrolyte interface and prevents structural degradation during charge/discharge process. Moreover, the amorphous nature of HfO2 allows facile diffusion of Na ions. These results clearly show the potential of HfO2 coated MoS2 anodes, which performance is significantly higher than previous reports where bulk MoS2 or composites of MoS2 with carbonaceous materials are used. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Enhancement of Endurance in HfO2-Based CBRAM Device by Introduction of a TaN Diffusion Blocking Layer

    KAUST Repository

    Chand, Umesh

    2017-08-05

    We propose a new method to improve resistive switching properties in HfO2 based CBRAM crossbar structure device by introducing a TaN thin diffusion blocking layer between the Cu top electrode and HfO2 switching layer. The Cu/TaN/HfO2/TiN device structure exhibits high resistance ratio of OFF/ON states without any degradation in switching during endurance test. The improvement in the endurance properties of the Cu/TaN/HfO2/TiN CBRAM device is thus attributed to the relatively low amount of Cu migration into HfO2 switching layer.

  7. High performance organic nonvolatile memory transistors based on HfO2 and poly(α-methylstyrene) electret hybrid charge-trapping layers

    Science.gov (United States)

    Xu, W. C.; He, H. X.; Jing, X. S.; Wu, S. J.; Zhang, Z.; Gao, J. W.; Gao, X. S.; Zhou, G. F.; Lu, X. B.; Liu, J.-M.

    2017-08-01

    In this work, we fabricated a high performance flash-type organic nonvolatile memory transistor, which adopted polymer-electret poly(α-methylstyrene) (PαMS) and HfO2 films as hybrid charge trapping layer (CTL). Compared with a single HfO2 or PαMS CTL structure, the hybrid HfO2/PαMS CTL structure can provide enhanced charge trapping efficiency to increase the device operation speed and reduce the leakage current to boost the device reliability. The fabricated nonvolatile organic memory transistors with the hybrid CTL shows excellent electrical properties, including low operation voltage (8 V), high speed (memories.

  8. Accurate prediction of band gaps and optical properties of HfO2

    Science.gov (United States)

    Ondračka, Pavel; Holec, David; Nečas, David; Zajíčková, Lenka

    2016-10-01

    We report on optical properties of various polymorphs of hafnia predicted within the framework of density functional theory. The full potential linearised augmented plane wave method was employed together with the Tran-Blaha modified Becke-Johnson potential (TB-mBJ) for exchange and local density approximation for correlation. Unit cells of monoclinic, cubic and tetragonal crystalline, and a simulated annealing-based model of amorphous hafnia were fully relaxed with respect to internal positions and lattice parameters. Electronic structures and band gaps for monoclinic, cubic, tetragonal and amorphous hafnia were calculated using three different TB-mBJ parametrisations and the results were critically compared with the available experimental and theoretical reports. Conceptual differences between a straightforward comparison of experimental measurements to a calculated band gap on the one hand and to a whole electronic structure (density of electronic states) on the other hand, were pointed out, suggesting the latter should be used whenever possible. Finally, dielectric functions were calculated at two levels, using the random phase approximation without local field effects and with a more accurate Bethe-Salpether equation (BSE) to account for excitonic effects. We conclude that a satisfactory agreement with experimental data for HfO2 was obtained only in the latter case.

  9. Interface engineered HfO2-based 3D vertical ReRAM

    Science.gov (United States)

    Hudec, Boris; Wang, I.-Ting; Lai, Wei-Li; Chang, Che-Chia; Jančovič, Peter; Fröhlich, Karol; Mičušík, Matej; Omastová, Mária; Hou, Tuo-Hung

    2016-06-01

    We demonstrate a double-layer 3D vertical resistive random access memory (ReRAM) stack implementing a Pt/HfO2/TiN memory cell. The HfO2 switching layer is grown by atomic layer deposition on the sidewall of a SiO2/TiN/SiO2/TiN/SiO2 multilayer pillar. A steep vertical profile was achieved using CMOS-compatible TiN dry etching. We employ in situ TiN bottom interface engineering by ozone, which results in (a) significant forming voltage reduction which allows for forming-free operation in AC pulsed mode, and (b) non-linearity tuning of low resistance state by current compliance during Set operation. The vertical ReRAM shows excellent read and write disturb immunity between vertically stacked cells, retention over 104 s and excellent switching stability at 400 K. Endurance of 107 write cycles was achieved using 100 ns wide AC pulses while fast switching speed using pulses of only 10 ns width is also demonstrated. The active switching region was evaluated to be located closer to the bottom interface which allows for the observed high endurance.

  10. Orientation control and domain structure analysis of {100}-oriented epitaxial ferroelectric orthorhombic HfO2-based thin films

    Science.gov (United States)

    Katayama, Kiliha; Shimizu, Takao; Sakata, Osami; Shiraishi, Takahisa; Nakamura, Shogo; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Uchida, Hiroshi; Funakubo, Hiroshi

    2016-04-01

    Orientation control of {100}-oriented epitaxial orthorhombic 0.07YO1.5-0.93HfO2 films grown by pulsed laser deposition was investigated. To achieve in-plane lattice matching, indium tin oxide (ITO) and yttria-stabilized zirconia (YSZ) were selected as underlying layers. We obtained (100)- and (001)/(010)-oriented films on ITO and YSZ, respectively. Ferroelastic domain formation was confirmed for both films by X-ray diffraction using the superlattice diffraction that appeared only for the orthorhombic symmetry. The formation of ferroelastic domains is believed to be induced by the tetragonal-orthorhombic phase transition upon cooling the films after deposition. The present results demonstrate that the orientation of HfO2-based ferroelectric films can be controlled in the same manner as that of ferroelectric films composed of conventional perovskite-type material such as Pb(Zr, Ti)O3 and BiFeO3.

  11. Ferroelectricity-modulated resistive switching in Pt/Si:HfO2/HfO2-x /Pt memory

    Science.gov (United States)

    Ran, Jiang; Xianghao, Du; Zuyin, Han

    2016-08-01

    It is investigated for the effect of a ferroelectric Si:HfO2 thin film on the resistive switching in a stacked Pt/Si:HfO2/highly-oxygen-deficient HfO2-x /Pt structure. Improved resistance performance was observed. It was concluded that the observed resistive switching behavior was related to the modulation of the width and height of a depletion barrier in the HfO2-x layer, which was caused by the Si:HfO2 ferroelectric polarization field effect. Reliable switching reproducibility and long data retention were observed in these memory cells, suggesting their great potential in non-volatile memories applications with full compatibility and simplicity. Project supported by the National Natural Science Foundation of China (No. 11374182), the Natural Science Foundation of Shandong Province (No. ZR2012FQ012), and the Jinan Independent Innovation Projects of Universities (No. 201303019).

  12. Enhanced PEC performance of nanoporous Si photoelectrodes by covering HfO2 and TiO2 passivation layers

    Science.gov (United States)

    Xing, Zhuo; Ren, Feng; Wu, Hengyi; Wu, Liang; Wang, Xuening; Wang, Jingli; Wan, Da; Zhang, Guozhen; Jiang, Changzhong

    2017-01-01

    Nanostructured Si as the high efficiency photoelectrode material is hard to keep stable in aqueous for water splitting. Capping a passivation layer on the surface of Si is an effective way of protecting from oxidation. However, it is still not clear in the different mechanisms and effects between insulating oxide materials and oxide semiconductor materials as passivation layers. Here, we compare the passivation effects, the photoelectrochemical (PEC) properties, and the corresponding mechanisms between the HfO2/nanoporous-Si and the TiO2/nanoporous-Si by I–V curves, Motte-schottky (MS) curves, and electrochemical impedance spectroscopy (EIS). Although the saturated photocurrent densities of the TiO2/nanoporous Si are lower than that of the HfO2/nanoporous Si, the former is more stable than the later. PMID:28252106

  13. Effect of growth rate on crystallization of HfO2 thin films deposited by RF magnetron sputtering

    Science.gov (United States)

    Dhanunjaya, M.; Manikanthababu, N.; Pathak, A. P.; Rao, S. V. S. Nageswara

    2016-05-01

    Hafnium oxide (HfO2) is the potentially useful dielectric material in both; electronics to replace the conventional SiO2 as gate dielectric and in Optics as anti-reflection coating material. In this present work we have synthesized polycrystalline HfO2 thin films by RF magnetron sputtering deposition technique with varying target to substrate distance. The deposited films were characterized by X-ray Diffraction, Rutherford Backscattering Spectrometry (RBS) and transmission and Reflection (T&R) measurements to study the growth behavior, microstructure and optical properties. XRD measurement shows that the samples having mixed phase of monoclinic, cubic and tetragonal crystal structure. RBS measurements suggest the formation of Inter Layer (IL) in between Substrate and film

  14. Enhanced PEC performance of nanoporous Si photoelectrodes by covering HfO2 and TiO2 passivation layers

    Science.gov (United States)

    Xing, Zhuo; Ren, Feng; Wu, Hengyi; Wu, Liang; Wang, Xuening; Wang, Jingli; Wan, Da; Zhang, Guozhen; Jiang, Changzhong

    2017-03-01

    Nanostructured Si as the high efficiency photoelectrode material is hard to keep stable in aqueous for water splitting. Capping a passivation layer on the surface of Si is an effective way of protecting from oxidation. However, it is still not clear in the different mechanisms and effects between insulating oxide materials and oxide semiconductor materials as passivation layers. Here, we compare the passivation effects, the photoelectrochemical (PEC) properties, and the corresponding mechanisms between the HfO2/nanoporous-Si and the TiO2/nanoporous-Si by I-V curves, Motte-schottky (MS) curves, and electrochemical impedance spectroscopy (EIS). Although the saturated photocurrent densities of the TiO2/nanoporous Si are lower than that of the HfO2/nanoporous Si, the former is more stable than the later.

  15. A small shoulder of optical absorption in polycrystalline HfO2 by LDA+U approach

    Science.gov (United States)

    Qin, Liyuan; Li, Jinping; Meng, Songhe; Lu, Hantao; Tohyama, Takami

    2016-10-01

    The dielectric function of the wide-gap optical material HfO2 is investigated by the local density approximation (LDA)+U approach. We focus on the origin of the shoulder-like structure near the edge of the band gap in the imaginary part of the dielectric function, which has been observed on the thin films of monoclinic HfO2. A comparison study on the three polymorphs of hafnia shows that regardless of the underlying crystal structure, the existence of the shoulder is mainly controlled by the value of the shortest length of Hf-O bonds. The proposition is further supported by the numerical simulations of isostatic pressing. A possible implication in high-pressure measurements is suggested accordingly.

  16. Scanning transmission electron microscopy of gate stacks with HfO2 dielectrics and TiN electrodes

    OpenAIRE

    Agustin, Melody P.; Fonseca, Leo R. C.; Hooker, Jacob C.; Stemmer, Susanne

    2005-01-01

    High-angle annular dark-field (HAADF) imaging and electron energy-loss spectroscopy (EELS) in scanning transmission electron microscopy were used to investigate HfO2 gate dielectrics grown by atomic layer deposition on Si substrates, and their interfaces with TiN electrodes and silicon, as a function of annealing temperature. Annealing at high temperatures (900 °C) caused significant roughening of both bottom (substrate) and top (electrode) interface. At the bottom interface, HAADF images s...

  17. XHAPLN3 plays a key role in cardiogenesis by maintaining the hyaluronan matrix around heart anlage.

    Science.gov (United States)

    Ito, Yuzuru; Seno, Satsuki; Nakamura, Hiroaki; Fukui, Akimasa; Asashima, Makoto

    2008-07-01

    Hyaluronan matrix plays an important role during vertebrate cardiogenesis. Transcripts for the hyaluronan synthase Has2 gene are expressed in heart anlage, and disruption of either Has2 or versican, a hyaluronan matrix component, abrogates normal cardiac morphogenesis. However, the mechanisms by which hyaluronan matrix contributes to early heart development are largely unknown. Here we show that Xenopus hyaluronan and proteoglycan-binding link protein 3 (XHAPLN3) helps to maintain hyaluronan matrix around the cardiac anlage, and thereby contribute to cardiogenesis. XHAPLN3 mRNA transcript localization overlapped with the mRNA expression of both Xhas2 and Xversican at the heart anlage of early tailbud (stage 23) embryos. Furthermore, knockdown of XHAPLN3 or Xhas2 with morpholino antisense oligos caused a heart deficiency in developing tadpoles. Our results show when and how components of the hyaluronan matrix function in cardiogenesis, improving our understanding of how extracellular matrix participates in embryogenesis.

  18. Fabrication and characteristics of ZnO MOS capacitors with high-K HfO2 gate dielectrics

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    ZnO thin films are first deposited on n-type silicon by radio frequency (rf) magnetron sputtering at room temperature.And high-K HfO2 gate dielectrics thin films are deposited on ZnO films to form metal-oxide semiconductor (MOS) capacitors.The temperature to fabricate ZnO MOS capacitors is 400°C,and the low temperature process is applicable for thin film transistors,flat-panel display (FPD),flexible display,etc.The electronic availability of ZnO thin films,which serve as a semiconductor material for MOS capacitors with HfO2 gate dielectric is investigated.High frequency (1 MHz) capacitance-voltage (C-V) and current-voltage (I-V) characteristics of ZnO-based MOS capacitors are measured.The thermal stability and electronic stability of the ZnO capacitors are investigated,respectively.Experimental results indicate that good electrical characteristics can be obtained on ZnO substrates with high-K HfO2 gate dielectrics.Besides,the ZnO capacitors can exhibit high thermal and electronic stabilities.

  19. HfO2/SiO2 multilayer based reflective and transmissive optics from the IR to the UV

    Science.gov (United States)

    Wang, Jue; Hart, Gary A.; Oudard, Jean Francois; Wamboldt, Leonard; Roy, Brian P.

    2016-05-01

    HfO2/SiO2 multilayer based reflective optics enable threat detection in the short-wave/middle-wave infrared and high power laser targeting capability in the near infrared. On the other hand, HfO2/SiO2 multilayer based transmissive optics empower early missile warning by taking advantage of the extremely low noise light detection in the deep-ultraviolet region where solar irradiation is strongly absorbed by the ozone layer of the earth's atmosphere. The former requires high laser damage resistance, whereas the latter needs a solar-blind property, i.e., high transmission of the radiation below 290 nm and strong suppression of the solar background from 300 nm above. The technical challenges in both cases are revealed. The spectral limits associated with the HfO2 and SiO2 films are discussed and design concepts are schematically illustrated. Spectral performances are realized for potential A and D and commercial applications.

  20. SHI induced effects on the electrical and optical properties of HfO2 thin films deposited by RF sputtering

    Science.gov (United States)

    Manikanthababu, N.; Dhanunjaya, M.; Nageswara Rao, S. V. S.; Pathak, A. P.

    2016-07-01

    The continuous downscaling of Metal Oxide Semiconductor (MOS) devices has reached a limit with SiO2 as a gate dielectric material. Introducing high-k dielectric materials as a replacement for the conservative SiO2 is the only alternative to reduce the leakage current. HfO2 is a reliable and an impending material for the wide usage as a gate dielectric in semiconductor industry. HfO2 thin films were synthesized by RF sputtering technique. Here, we present a study of Swift Heavy Ion (SHI) irradiation with100 MeV Ag ions for studying the optical properties as well as 80 MeV Ni ions for studying the electrical properties of HfO2/Si thin films. Rutherford Backscattering Spectrometry (RBS), Field Emission Scanning Electron Microscope (FESEM), energy-dispersive X-ray spectroscopy (EDS), profilometer and I-V (leakage current) measurements have been employed to study the SHI induced effects on both the structural, electrical and optical properties.

  1. Hetero-epitaxial growth of the cubic single crystalline HfO 2 film as high k materials by pulsed laser ablation

    Science.gov (United States)

    Zhang, Xinqiang; Tu, Hailing; Wang, Xiaona; Xiong, Yuhua; Yang, Mengmeng; Wang, Lei; Du, Jun

    2010-10-01

    We report a hetero-epitaxial growth of cubic single crystalline HfO 2 film on Si substrates as high k materials by pulse laser ablation (PLA) at 820 °C. To eliminate the interfacial defects, the HfO 2 film has then been annealed at 900 °C for 5 min in N 2. Reflection high-energy electron diffraction (RHEED) results indicate orientation of the HfO 2 film on Si substrates corresponding to (∥( and [∥[. An interface layer has been revealed by high-resolution transmission electron microscope (HRTEM). Through capacitance-voltage ( C- V) and current-voltage ( I- V), it has been obtained that the leakage current of the HfO 2 gate insulator with dielectric constant of 26 is 5×10 -6 A/cm 2 at -1 V.

  2. Accumulation effect of SiO2 protective layer on multi-shot laser-induced damage in high-reflectivity HfO2 /SiO2 coatings

    Institute of Scientific and Technical Information of China (English)

    Ying Wang; Hongbo He; Yuan'an Zhao; Yongguang Shan; Chaoyang Wei

    2011-01-01

    The accumulation effects in high-reflectivity (HR) HfO2/SiO2 coatings under laser irradiation are investigated. The HR HfO2/SiO2 coatings are prepared by electron beam evaporation at 1064 nm. The laser-induced damage threshold (LIDT) are measured at 1064 nm and at a pulse duration of 12 ns, in 1-on-l and S-on-1 modes. Multi-shot LIDT is lower than single-shot LIDT. The laser-induced and native defects play an important role in the multi-shot mode. A correlative theory model based on critical conduction band electron density is constructed to elucidate the experimental phenomena.%The accumulation effects in high-reflectivity (HR) HfO2/SiO2 coatings under laser irradiation are investigated.The HR HfO2/SiO2 coatings are prepared by electron beam evaporation at 1 064 nm.The laser-induced damage threshold (LIDT) are measured at 1 064 nm and at a pulse duration of 12 ns,in 1-on-1 and S-on-1 modes.Multi-shot LIDT is lower than single-shot LIDT.The laser-induced and native defects play an important role in the multi-shot mode.A correlative theory model based on critical conduction band electron density is constructed to elucidate the experimental phenomena.In recent years,many laboratories have investigated multi-shot laser-induced damage in optical materials,such as fused silica[1] and KTP crystals[2].The multishot laser-induced damage threshold (LIDT) is often lower than single-shot LIDT because of the accumulation effects in most optical materials[1,3-5].As a result,investigations on multi-shot laser-induced damage in optical coatings are of high practical importance for high-power laser applications[5,6].The mechanism for single-shot laser damage includes avalanche ionization (AI)[7],multiphoton ionization (MPI) [8],impurity breakdown[9],etc.

  3. SnO2 anode surface passivation by atomic layer deposited HfO2 improves li-ion battery performance

    KAUST Repository

    Yesibolati, Nulati

    2014-03-14

    For the first time, it is demonstrated that nanoscale HfO2 surface passivation layers formed by atomic layer deposition (ALD) significantly improve the performance of Li ion batteries with SnO2-based anodes. Specifically, the measured battery capacity at a current density of 150 mAg -1 after 100 cycles is 548 and 853 mAhg-1 for the uncoated and HfO2-coated anodes, respectively. Material analysis reveals that the HfO2 layers are amorphous in nature and conformably coat the SnO2-based anodes. In addition, the analysis reveals that ALD HfO2 not only protects the SnO2-based anodes from irreversible reactions with the electrolyte and buffers its volume change, but also chemically interacts with the SnO2 anodes to increase battery capacity, despite the fact that HfO2 is itself electrochemically inactive. The amorphous nature of HfO2 is an important factor in explaining its behavior, as it still allows sufficient Li diffusion for an efficient anode lithiation/delithiation process to occur, leading to higher battery capacity. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Evidence of GeO volatilization and its effect on the characteristics of HfO2 grown on a Ge substrate

    Institute of Scientific and Technical Information of China (English)

    Fan Ji-Bin; Liu Hong-Xia; Fei Cheng-Xi; Ma Fei; Fan Xiao-Jiao; Hao Yue

    2013-01-01

    HfO2 films are deposited by atomic layer deposition (ALD) using tetrakis ethylmethylamino hafnium (TEMAH) as the hafnium precursor,while O3 or H2O is used as the oxygen precursor.After annealing at 500 ℃ in nitrogen,the thickness of Ge oxide's interfacial layer decreases,and the presence of GeO is observed at the H2O-based HfO2 interface due to GeO volatilization,while it is not observed for the O3-based HfO2.The difference is attributed to the residue hydroxyl groups or H2O molecules in H2O-based HfO2 hydrolyzing GeO2 and forming GeO,whereas GeO is only formed by the typical reaction mechanism between GeO2 and the Ge substrate for O3-based HfO2 after annealing.The volatilization of GeO deteriorates the characteristics of the high-κ films after annealing,which has effects on the variation of valence band offset and the C-V characteristics of HfO2/Ge after annealing.The results are confirmed by X-ray photoelectron spectroscopy (XPS) and electrical measurements.

  5. Hafnium carbamates and ureates: new class of precursors for low-temperature growth of HfO2 thin films.

    Science.gov (United States)

    Pothiraja, Ramasamy; Milanov, Andrian P; Barreca, Davide; Gasparotto, Alberto; Becker, Hans-Werner; Winter, Manuela; Fischer, Roland A; Devi, Anjana

    2009-04-21

    Novel volatile compounds of hafnium, namely tetrakis-N,O-dialkylcarbamato hafnium(iv) [Hf((i)PrNC(O)O(i)Pr)(4)] () and tetrakis-N,N,N'-trialkylureato hafnium(iv) [Hf((i)PrNC(O)N-(Me)Et)(4)] (), have been synthesized through the simple insertion reaction of isopropyl isocyanate into hafnium isopropoxide and hafnium ethylmethylamide, respectively; based on the promising thermal properties, compound has been evaluated as a precursor for metalorganic chemical vapor deposition (MOCVD) of HfO(2) thin films, which resulted in the growth of stoichiometric and crystalline layers with a uniform morphology at temperature as low as 250 degrees C.

  6. Simulation study of HEMT structures with HfO2 cap layer for mitigating inverse piezoelectric effect related device failures

    Directory of Open Access Journals (Sweden)

    Deepthi Nagulapally

    2015-01-01

    Full Text Available The Inverse Piezoelectric Effect (IPE is thought to contribute to possible device failure of GaN High Electron Mobility Transistors (HEMTs. Here we focus on a simulation study to probe the possible mitigation of the IPE by reducing the internal electric fields and related elastic energy through the use of high-k materials. Inclusion of a HfO2 “cap layer” above the AlGaN barrier particularly with a partial mesa structure is shown to have potential advantages. Simulations reveal even greater reductions in the internal electric fields by using “field plates” in concert with high-k oxides.

  7. Study of structure and antireflective properties of LaF3/HfO2/SiO2 and LaF3/HfO2/MgF2 trilayers for UV applications

    Science.gov (United States)

    Marszalek, K.; Jaglarz, J.; Sahraoui, B.; Winkowski, P.; Kanak, J.

    2015-01-01

    The aim of this paper is to study antireflective properties of the tree-layer systems LaF3/HfO2/SiO2 and LaF3/HfO2/MgF2 deposited on heated optical glass substrates. The films were evaporated by the use two deposition techniques. In first method oxide films were prepared by means of e-gun evaporation in vacuum of 5 × 10-5 mbar in the presence of oxygen. The second was used for the deposition of fluoride films. They were obtained by means of thermal source evaporation. Simulation of reflectance was performed for 1M2H1L (Quarter Wavelength Optical Thickness) film stack on an optical quartz glass with the refractive index n = 1.46. The layer thickness was optimized to achieve the lowest light scattering from glass surface covered with dioxide and fluoride films. The values of the interface roughness were determined through atomic force microscopy measurements. The essence of performed calculation was to find minimum reflectance of light in wide ultraviolet region. The spectral dispersion of the refractive index needed for calculations was determined from ellipsometric measurements using the spectroscopic ellipsometer M2000. Additionally, the total reflectance measurements in integrating sphere coupled with Perkin Elmer 900 spectrophotometer were performed. These investigations allowed to determine the influence of such film features like surface and interface roughness on light scattering.

  8. The Post—deposition Anneal Effects on the Electrical Properties of HfO2 Gate Dielectric Deposited by Ion Beam Sputtering at Room Temperature

    Institute of Scientific and Technical Information of China (English)

    KANGJinfeng; LIUXiaoyan; TIANDayu; WANGWei; LIANGuijun; XIONGGuangcheng; HANRuqi

    2003-01-01

    HfO2 high K gate dielectric films were fab-ricated on p-Si(100) substrates by ion beam sputtering at room temperature followed by a post-deposition anneal-ing (PDA). The PDA effects on the electrical properties of HfO2 gate dielectric films were studied. High quality HfO2 gate dielectric with small equivalent oxide thickness (EOT = 2.3nm), small hystereis (△VFB<50mV), and lowleakage current (< 1× 10-4A/cm2@lV) was fabricated.The studies of PDA effects on the electrical properties in-dicate that the PDA process in nitrogen ambient will be necessary for the HfO2 gate dielectric films deposited by ion beam sputtering the sintered target at room temper-ature in order to obtain small equivalent oxide thickness and low leakage currents, whereas a PDA in oxygen ambi-ent will be not required. The results also means that there is less oxygen vacancy defect produced in the HfO2 gate dielectric films during the deposition at room temperature.

  9. The effect of ultraviolet irradiation on the ultra-thin HfO2 based CO gas sensor

    Science.gov (United States)

    Karaduman, Irmak; Barin, Ã.-zlem; Yıldız, Dilber Esra; Acar, Selim

    2015-11-01

    In this work, an effort has been made to fabricate ultrathin HfO2/Al2O3 sample by atomic layer deposition method for the fast detection of CO gas at room temperature. The effect of the operating temperature and the UV light on the gas sensing characteristics has been studied. We investigated the optimum operating temperature for the sample by sensing 25 ppm CO and CO2 gases from room temperature to 150 °C for 10 °C steps. The maximum response was obtained at 150 °C for both gases in the measurement temperature range. Also, the photoresponse measurements clearly show the effect of UV light on the sample. At room temperature, sensor showed superior response (14%) for 5 ppm CO gas. The response time of sensor is 6 s to 5 ppm CO gas concentration. The ultrathin HfO2 based sample shows acceptable gas sensitivity for 5 ppm CO gas at room temperature under UV light irradiation.

  10. Photo-, cathodo- and thermoluminescent properties of dysprosium-doped HfO2 films deposited by ultrasonic spray pyrolysis.

    Science.gov (United States)

    Manríquez, R Reynoso; Góngora, J A I Díaz; Guzmán-Mendoza, J; Montalvo, T Rivera; Olguín, J C Guzmán; Ramírez, P V Cerón; García-Hipólito, M; Falcony, C

    2014-09-01

    In this work, the photoluminescent (PL), cathodoluminescent (CL) and thermoluminescent (TL) properties of hafnium oxide films doped with trivalent dysprosium ions are reported. The films were deposited on glass substrates at temperatures ranging from 300 to 600°C, using chlorides as precursor reagents. The surface morphology of films showed a veins shaped microstructure at low deposition temperatures, while at higher temperatures the formation of spherical particles was observed on the surface. X-ray diffraction showed the presence of HfO2 monoclinic phase in the films deposited at temperatures greater than 400°C. The PL and CL spectra of the doped films showed the highest emission band centered at 575nm corresponding to the transitions (4)F9/2→(6)H13/2, which is a characteristic transition of Dy(3+) ion. The greatest emission intensities were observed in samples doped with 1 atomic percent (at%) of DyCl3 in the precursor solution. Regarding the TL behavior, the glow curve of HfO2:Dy(+3) films exhibited spectrum with one broad band centered at about 150°C. The highest intensity TL response was observed on the films deposited at 500°C. Copyright © 2014 Elsevier Ltd. All rights reserved.

  11. Extracellular matrix molecules play diverse roles in the growth and guidance of central nervous system axons

    Directory of Open Access Journals (Sweden)

    M.A. Pires-Neto

    1999-05-01

    Full Text Available Axon growth and guidance represent complex biological processes in which probably intervene diverse sets of molecular cues that allow for the appropriate wiring of the central nervous system (CNS. The extracellular matrix (ECM represents a major contributor of molecular signals either diffusible or membrane-bound that may regulate different stages of neural development. Some of the brain ECM molecules form tridimensional structures (tunnels and boundaries that appear during time- and space-regulated events, possibly playing relevant roles in the control of axon elongation and pathfinding. This short review focuses mainly on the recognized roles played by proteoglycans, laminin, fibronectin and tenascin in axonal development during ontogenesis.

  12. Capacitance-voltage and retention characteristics of Pt/SrBi2Ta2O9/HfO2/Si structures with various buffer layer thickness

    Science.gov (United States)

    Tang, M. H.; Sun, Z. H.; Zhou, Y. C.; Sugiyama, Y.; Ishiwara, H.

    2009-05-01

    The metal-ferroelectric-insulator-semiconductor (MFIS) structure diodes with SrBi2Ta2O9 (SBT) as ferroelectric thin film and HfO2 as insulating buffer layer were fabricated. The electrical properties of MFIS structure were investigated for different HfO2 buffer layer thickness. The experimental results show that the memory window extended significantly as the HfO2 layer thickness increased from 6 to 10 nm. It is also observed that the leakage current was reduced to about 10-10 A at applied voltage of 4 V, and the high and low capacitances remained distinguishable for over 8 h even if we extrapolate the measured data to 10 years.

  13. Interfacial reaction and electrical properties of HfO2 film gate dielectric prepared by pulsed laser deposition in nitrogen: role of rapid thermal annealing and gate electrode.

    Science.gov (United States)

    Wang, Yi; Wang, Hao; Ye, Cong; Zhang, Jun; Wang, Hanbin; Jiang, Yong

    2011-10-01

    The high-k dielectric HfO(2) thin films were deposited by pulsed laser deposition in nitrogen atmosphere. Rapid thermal annealing effect on film surface roughness, structure and electrical properties of HfO(2) film was investigated. The mechanism of interfacial reaction and the annealing atmosphere effect on the interfacial layer thickness were discussed. The sample annealed in nitrogen shows an amorphous dominated structure and the lowest leakage current density. Capacitors with high-k HfO(2) film as gate dielectric were fabricated, using Pt, Au, and Ti as the top gate electrode whereas Pt constitutes the bottom side electrode. At the gate injection case, the Pt- and Au-gated metal oxide semiconductor devices present a lower leakage current than that of the Ti-gated device, as well as similar leakage current conduction mechanism and interfacial properties at the metal/HfO(2) interface, because of their close work function and chemical properties.

  14. A tunneling current density model for ultra thin HfO2 high-k dielectric material based MOS devices

    Science.gov (United States)

    Maity, Niladri Pratap; Maity, Reshmi; Thapa, R. K.; Baishya, Srimanta

    2016-07-01

    In this paper, an analytical model for evaluation of tunneling current density of ultra thin MOS devices is presented. The impacts of the promising high-k dielectric material, HfO2 on the current density model have been carried out. In this work, improvement in the results is brought in by taking into account the barrier height lowering due to the image force effect. The considered voltage range is from 0 to ψ1/e i.e., 0 neglecting the image force effect for a MOS device consisting asymmetric barrier. Later, image force effect of ultra thin oxide layer has been introduced for practical potential barrier by superimposing the potential barrier on the trapezoidal barrier. Theoretical predictions are compared with the results obtained by the 2-D numerical device simulator ATLAS and published experimental results. Excellent agreements among the three are observed.

  15. Effects of water vapor in high vacuum chamber on the properties of HfO2 films

    Institute of Scientific and Technical Information of China (English)

    Bo Ling; Hongbo He; Jianda Shao

    2007-01-01

    The influence of water vapor content in high vacuum chamber during the coating process on physical properties of HfO2 films was investigated. Coatings were deposited on BK7 substrates by electron beam evaporation and photoelectric maximum control method. An in situ residual gas analyzer (RGA) was used to monitor the residual gas composition in the vacuum chamber. The optical properties, microstructure,absorption and laser-induced damage threshold (LIDT) of the samples were characterized by Lambda 900 spectrophotometer, X-ray diffraction (XRD), surface thermal lensing (STL) technique and 1064-nm Qswitched pulsed laser at a pulse duration of 12 ns respectively. It was found that a cold trap is an effective equipment to suppress water vapor in the vacuum chamber during the pumping process, and the coatings deposited in the vacuum atmosphere with relatively low water vapor composition show higher refractive index and smaller grain size. Meanwhile, the higher LIDT value is corresponding to lower absorbance.

  16. HfO2/porous anodic alumina composite films for multifunctional data storage media materials under electric field control

    Science.gov (United States)

    Qi, Li-Qian; Pan, Di-Ya; Li, Jun-Qing; Liu, Li-Hu; Sun, Hui-Yuan

    2017-03-01

    New materials for achieving direct electric field control of ferromagnetism and resistance behavior are highly desirable in the development of multifunctional data storage devices. In this paper, HfO2 nanoporous films have been fabricated on porous anodic alumina (PAA) substrates by DC-reactive magnetron sputtering. Electrically induced resistive switching (RS) and modulated room temperature ferromagnetism are simultaneously found in a Ag/HfO2/PAA/Al (Ag/HP/Al) heterostructure. The switching mechanism between low resistance state and high resistance state is generally attributed to the formation/rupture of conductive filaments which may consist of oxygen vacancies. The combination of the electric field control of magnetization change and RS makes HP films possible for the multifunctional data storage media materials.

  17. Effects of NH3 annealing on interface and electrical properties of Gd-doped HfO2/Si stack

    Institute of Scientific and Technical Information of China (English)

    YANG Mengmeng; TU Hailing; DU Jun; WEI Feng; XIONG Yuhua; ZHAO Hongbin

    2013-01-01

    Effects of NH3 rapid thermal annealing (RTA) on the interface and electrical properties of Gd-doped HfO2 (GDH)/Si stack were investigated.The process of NH3 annealing could significantly affect the crystallization,stoichiometric properties of GDH film and the interface characteristic of GDH/Si system.NH3 annealing also led to the decrease of interface layer thickness.The leakage current density of Pt/GDH/p-Si MOS capacitor without RTA was 2× 10-3 A/cm2.After NH3 annealing,the leakage current density was about one order of magnitude lower (3.9×10-4 A/cm2).The effective permittivity extracted from the C-V curves was ~14.1 and ~13.1 for samples without and with RTA,respectively.

  18. The initial atomic layer deposition of HfO2/Si(001) as followed in situ by synchrotron radiation photoelectron spectroscopy

    Science.gov (United States)

    Tallarida, Massimo; Karavaev, Konstantin; Schmeisser, Dieter

    2008-09-01

    We have grown HfO2 on Si(001) by atomic layer deposition (ALD) using HfCl4 and H2O as precursors. The early stages of the ALD were investigated with high-resolution photoelectron spectroscopy and x-ray absorption spectroscopy. We observed the changes occurring in the Si2p, O1s, Hf4f, Hf4d, and Cl2p core level lines after each ALD cycle up to the complete formation of two layers of HfO2. From the analysis of those variations, we deduced the growth properties of HfO2. The first layer consists of a sparse and Cl-contaminated oxide because of the incomplete oxidation, and the second layer is denser than the first one and with an almost stoichiometric O /Hf ratio. At the completion of the second layer, the x-ray absorption spectra revealed the change of the Hf-oxide chemical state due to the transition from the thin Hf-oxide to the bulklike HfO2.

  19. Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application

    Directory of Open Access Journals (Sweden)

    Molina-Aldareguia Jon

    2011-01-01

    Full Text Available Abstract Nanostructuring of ultrathin HfO2 films deposited on GaAs (001 substrates by high-resolution Lloyd's mirror laser interference nanolithography is described. Pattern transfer to the HfO2 film was carried out by reactive ion beam etching using CF4 and O2 plasmas. A combination of atomic force microscopy, high-resolution scanning electron microscopy, high-resolution transmission electron microscopy, and energy-dispersive X-ray spectroscopy microanalysis was used to characterise the various etching steps of the process and the resulting HfO2/GaAs pattern morphology, structure, and chemical composition. We show that the patterning process can be applied to fabricate uniform arrays of HfO2 mesa stripes with tapered sidewalls and linewidths of 100 nm. The exposed GaAs trenches were found to be residue-free and atomically smooth with a root-mean-square line roughness of 0.18 nm after plasma etching. PACS: Dielectric oxides 77.84.Bw, Nanoscale pattern formation 81.16.Rf, Plasma etching 52.77.Bn, Fabrication of III-V semiconductors 81.05.Ea

  20. Electron trapping properties at HfO2/SiO2 interface, studied by Kelvin probe force microscopy and theoretical analysis

    Science.gov (United States)

    Zhang, Man-Hong

    2016-08-01

    Electron trapping properties at the HfO2/SiO2 interface have been measured through Kelvin Probe force microscopy, between room temperature and 90 °C. The electron diffusion in HfO2 shows a multiple-step process. After injection, electrons diffuse quickly toward the HfO2/SiO2 interface and then diffuse laterally near the interface in two sub-steps: The first is a fast diffusion through shallow trap centers and the second is a slow diffusion through deep trap centers. Evolution of contact potential difference profile in the fast lateral diffusion sub-step was simulated by solving a diffusion equation with a term describing the charge loss. In this way, the diffusion coefficient and the average life time at different temperatures were extracted. A value of 0.57 eV was calculated for the activation energy of the shallow trap centers in HfO2. Project supported by the National Natural Science Foundation of China (Grant No. 61176080).

  1. In-situ growth of HfO2 on clean 2H-MoS2 surface: Growth mode, interface reactions and energy band alignment

    Science.gov (United States)

    Chen, Chang Pang; Ong, Bin Leong; Ong, Sheau Wei; Ong, Weijie; Tan, Hui Ru; Chai, Jian Wei; Zhang, Zheng; Wang, Shi Jie; Pan, Ji Sheng; Harrison, Leslie John; Kang, Hway Chuan; Tok, Eng Soon

    2017-10-01

    Room temperature growth of HfO2 thin film on clean 2H-MoS2 via plasma-sputtering of Hf-metal target in an argon/oxygen environment was studied in-situ using x-ray photoelectron spectroscopy (XPS). The deposited film was observed to grow akin to a layer-by-layer growth mode. At the onset of growth, a mixture of sulfate- and sulfite-like species (SOx2- where x = 3, 4), and molybdenum trioxide (MoO3), are formed at the HfO2/MoS2 interface. An initial decrease in binding energies for both Mo 3d and S 2p core-levels of the MoS2 substrate by 0.4 eV was also observed. Their binding energies, however, did not change further with increasing HfO2 thickness. There was no observable change in the Hf4f core-level binding energy throughout the deposition process. With increasing HfO2 deposition, MoO3 becomes buried at the interface while SOx2- was observed to be present in the film. The shift of 0.4 eV for both Mo 3d and S 2p core-levels of the MoS2 substrate can be attributed to a charge transfer from the substrate to the MoO3/SOx2--like interface layer. Consequently, the Type I heterojunction valence band offset (conduction band offset) becomes 1.7 eV (2.9 eV) instead of 1.3 eV (3.3 eV) expected from considering the bulk HfO2 and MoS2 valence band offset (conduction band offset). The formation of these states and its influence on band offsets will need to be considered in their device applications.

  2. Theoretical views on activation of methane catalyzed by Hf2+ and oxidation of CO (x(1)Σ(+)) by N2O (x(1)Σ(+)) Catalyzed by HfO2+ and TaO2+.

    Science.gov (United States)

    Nian, Jingyan; Tie, Lu; Wang, Ben; Guo, Zhiguang

    2013-09-12

    The mechanisms of activation of CH4 catalyzed by (1/3)Hf(2+) and oxidation of CO by N2O catalyzed by (1/3)HfO(2+) or (2/4)TaO(2+) have been investigated using the B3LYP level of theory. For the activation of methane, the TSR (two-state reactivity) mechanism has been certified through the spin-orbit coupling (SOC) calculation and the Landau-Zener-type model. In the vicinity of the minimum energy crossing point (MECP), SOC equals 900.23 cm(-1) and the probability of intersystem crossing is approximately 0.62. Spin inversion makes the activation barrier decline from 1.63 to 0.57 eV. NBO analysis demonstrates that empty 6s and 5d orbitals of the Hf atom play the major role for the activation of C-H bonds. Finally, CH4 dehydrogenates to produce Hf-CH2(2+). For oxidation of CO by N2O catalyzed by HfO(2+) or TaO(2+), the covalent bonds between transition metal atoms and the oxygen atom restrict the freedom of valence electrons. Therefore, they are all SSR (single-state reactivity). The oxygen atom is directly extracted during the course of oxygen transfer, and its microscopic essence has been discussed. The detailed kinetic information of two catalytic cycles has been calculated by referencing the "energetic span (δE)" model. Finally, TOF(HfO(2+))/TOF(TaO(2+)) = 2.7 at 298.15 K, which has a good consistency with the experimental result.

  3. Growth of (111)-oriented epitaxial and textured ferroelectric Y-doped HfO2 films for downscaled devices

    Science.gov (United States)

    Katayama, Kiliha; Shimizu, Takao; Sakata, Osami; Shiraishi, Takahisa; Nakamura, Syogo; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Uchida, Hiroshi; Funakubo, Hiroshi

    2016-09-01

    In this study, the growth of (111)-oriented epitaxial and textured YO1.5-HfO2 (0.07:0.93 ratio) films using the pulsed laser deposition method is presented. Epitaxial films were prepared on ITO//(111)yttria-stabilized zirconia (YSZ) substrates (ITO: Sn-doped In2O3; YSZ: yttria-stabilized zirconia), while textured films were prepared on (111)Pt/TiOx/SiO2//Si substrates with and without an ITO buffer layer via the grain on grain coherent growth. Inserting an ITO layer increased the volume fraction of the ferroelectric orthorhombic phase. Both the epitaxial and uniaxially textured films exhibited similar ferroelectricity with a remanent polarization of around 10 μC/cm2 and a coercive field of 1.9 to 2.0 MV/cm. These results present us with a way of obtaining stable and uniform ferroelectric properties for each grain and device cells consisting of a small number of grains. This opens the door for ultimately miniaturized ferroelectric devices, such as ferroelectric field effect transistors with small gate length and resistive random access memory using ferroelectric tunnel junctions.

  4. Wide band antireflective coatings Al2O3 / HfO2 / MgF2 for UV region

    Science.gov (United States)

    Winkowski, P.; Marszałek, Konstanty W.

    2013-07-01

    Deposition technology of the three layers antireflective coatings consists of hafnium compound are presented in this paper. Oxide films were deposited by means of e-gun evaporation in vacuum of 5x10-5 mbar in presence of oxygen and fluoride films by thermal evaporation. Substrate temperature was 250°C. Coatings were deposited onto optical lenses made from quartz glass (Corning HPFS). Thickness and deposition rate were controlled by thickness measuring system Inficon XTC/2. Simulations leading to optimization of thickness and experimental results of optical measurements carried during and after deposition process were presented. Physical thickness measurements were made during deposition process and were equal to 43 nm/74 nm/51 nm for Al2O3 / HfO2 / MgF2 respectively. Optimization was carried out for ultraviolet region from 230nm to the beginning of visible region 400 nm. In this region the average reflectance of the antireflective coating was less than 0.5% in the whole range of application.

  5. Electrical characteristics of multilayered HfO2-Al2O3 charge trapping stacks deposited by ALD

    Science.gov (United States)

    Spassov, D.; Paskaleva, A.; Guziewicz, E.; Luka, G.; AKrajewski, T.; Kopalko, K.; Wierzbicka, A.; Blagoev, B.

    2016-10-01

    Electrical and charge trapping properties of atomic layer deposited HfO2-Al2O3 multilayer stacks with two different Al2O3 sublayer thicknesses were investigated regarding their implementation in charge trapping non-volatile memories. The effect of post deposition annealing in oxygen at 600°C is also studied. The decreasing Al2O3 thickness increases the stack's dielectric constant and the density of the initial positive oxide charge. The initial oxide charge increases after annealing to ∼6×1012 cm-2 and changes its sign to negative for the stacks with thicker Al2O3. The annealing enhances the dielectric constant of the stacks and reduces their thickness preserving the amorphous status. Nevertheless the annealing is not beneficial for the stacks with thicker Al2O3 as it considerably increases leakage currents. Conduction mechanisms in stacks were considered in terms of hopping conduction at low electric fields, and Fowler- Nordheim tunnelling, Schottky emission and Poole-Frenkel effect at higher ones. Maximum memory windows of about 12 and 16V were obtained for the as-grown structures with higher and lower Al2O3 content, respectively. In latter case additional improvement (the memory window increase up to 23V) is achieved by the annealing.

  6. Thirty-Day-Long Data Retention in Ferroelectric-Gate Field-Effect Transistors with HfO2 Buffer Layers

    Science.gov (United States)

    Takahashi, Kazuhiro; Aizawa, Koji; Park, Byung-Eun; Ishiwara, Hiroshi

    2005-08-01

    Metal-ferroelectric-insulator-semiconductor (MFIS) diodes and p-channel MFIS field-effect transistors (FETs) were fabricated and their electrical properties were characterized. These MFIS structures were formed using HfO2 as an insulating buffer layer, and SrBi2Ta2O9 (SBT) and (Bi,La)4Ti3O12 (BLT) as ferroelectric films. HfO2 buffer layers of about 8 nm physical thickness were deposited by ultrahigh-vacuum (UHV) electron-beam evaporation, then ferroelectric films of about 400 nm thickness were deposited by sol-gel spin coating. The fabricated p-channel MFIS-FETs with the SBT/HfO2 gate structure exhibited a drain current on/off ratio larger than 103 even after 30 days had elapsed. It was also found that the degradation of ferroelectricity was not pronounced even after applying 2.2× 1011 bipolar pulses.

  7. Effects of annealing on electrical performance of multilayer MoS2 transistors with atomic layer deposited HfO2 gate dielectric

    Science.gov (United States)

    Wen, Ming; Xu, Jingping; Liu, Lu; Lai, Pui-To; Tang, Wing-Man

    2016-09-01

    Atomic layer deposited HfO2 annealed in different ambients (N2, O2, and NH3) is used to replace SiO2 as a gate dielectric for fabricating back-gated multilayer MoS2 transistors. Excellent electrical properties such as a mobility of 15.1 cm2/(V·s), an on/off ratio exceeding 107, and a hysteresis of 0.133 V are achieved for samples annealed in NH3 at 400 °C for 10 min. This is caused by the NH3 annealing passivation effects that reduce defective states in the HfO2 dielectric and the interface. The capacitance equivalent thickness is only 7.85 nm, which is quite small for a back-gated MoS2 transistor and is conducive to the scaling down of the device.

  8. Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight

    Science.gov (United States)

    Clima, S.; Wouters, D. J.; Adelmann, C.; Schenk, T.; Schroeder, U.; Jurczak, M.; Pourtois, G.

    2014-03-01

    The origin of the ferroelectric polarization switching in orthorhombic HfO2 has been investigated by first principles calculations. The phenomenon can be regarded as being the coordinated displacement of four O ions in the orthorhombic unit cell, which can lead to a saturated polarization as high as 53 μC/cm2. We show the correlation between the computed polarization reversal barrier and the experimental coercive fields.

  9. Laminated CeO2/HfO2 High-K Gate Dielectrics Grown by Pulsed Laser Deposition in Reducing Ambient

    NARCIS (Netherlands)

    Karakaya, K.; Barcones, B.; Zinine, A.; Rittersma, Z.M.; Graat, P.; Berkum, van J.G.M.; Verheijen, M.A.; Rijnders, G.; Blank, D.H.A.

    2006-01-01

    CeO2 and HfO2 dielectric layers were deposited in an Ar+(5%)H2 gas mixture by Pulsed Laser Deposition (PLD) on Si (100). A CeO2-Ce2O3 transformation is achieved by deposition in reducing ambient. It is also shown that in-situ post deposition anneal efficiently oxidizes Ce2O3 layers to CeO2. The prop

  10. Effects of the oxygen precursor on the electrical and structural properties of HfO2 films grown by atomic layer deposition on Ge

    Science.gov (United States)

    Spiga, S.; Wiemer, C.; Tallarida, G.; Scarel, G.; Ferrari, S.; Seguini, G.; Fanciulli, M.

    2005-09-01

    We report on the growth by atomic layer deposition of HfO2 films on HF-last treated Ge(001) substrates using HfCl4 as a Hf source and either O3 or H2O as oxygen sources. The choice of the oxygen precursor strongly influences the structural, chemical, and electrical properties of the HfO2 films: Those grown using H2O exhibit local epitaxial growth, a large amount of contaminants such as chlorine and carbon, and a large frequency dispersion of the capacitance-voltage (C -V) characteristics. Films grown using O3 are good insulators and exhibit well-shaped C -V curves with a minimum frequency dispersion of the accumulation capacitance. Moreover, they are smoother, less crystallized, and with a lower contaminant content than those grown using H2O. However, the use of O3 leads to the formation of a 2nm thick layer, possibly GeOx, at the HfO2/Ge interface.

  11. Effect of standing-wave field distribution on femosecond laser-induced damage of HfO2/SiO2 mirror coating

    Institute of Scientific and Technical Information of China (English)

    Shunli Chen; Yuan'an Zhao; Hongbo He; Manda Shao

    2011-01-01

    Single-pulse and multi-pulse damage behaviors of "standard" (with A/4 stack structure) and "modified" (with reduced standing-wave field) HfO2/SiO2 mirror coatings are investigated using a commercial 50-fs, 800-nm Tksapphire laser system. Precise morphologies of damaged sites display strikingly different features when the samples are subjected to various number of incident pulses, which are explained reasonably by the standing-wave field distribution within the coatings. Meanwhile, the single-pulse laser-induced damage threshold of the "standard" mirror is improved by about 14% while suppressing the normalized electric field intensity at the outmost interface of the HfO2 and SiO2 layers by 37%. To discuss the damage mechanism, a theoretical model based on photoionization, avalanche ionization, and decays of electrons is adopted to simulate the evolution curves of the conduction-band electron density during pulse duration.%@@ Single-pulse and multi-pulse damage behaviors of "standard"(with λ/4 stack structure) and "modified"(with reduced standing-wave field) HfO2/SiO2 mirror coatings are investigated using a commercial 50-fs,800-nm Thsapphire laser system.以Precise morphologies of damaged sites display strikingly different features when the samples are subjected to various number of incident pulses, which are explained reasonably by the standing-wave field distribution within the coatings .

  12. Electrical Characterization of Metal-Insulator-Metal Capacitors with Atomic-Layer-Deposited HfO2 Dielectrics for Radio Frequency Integrated Circuit Application

    Institute of Scientific and Technical Information of China (English)

    HUANG Yu-Jian; HUANG Yue; DING Shi-Jin; ZHANG Wei; LIU Ran

    2007-01-01

    Metal-insulator-metal (MIM) capacitors with atomic-layer-deposited HfO2 dielectric and TaN electrodes are investigated for rf integrated circuit applications. For 12nm HfO2, the fabricated capacitor exhibits a high capacitance density of 15.5fF/μm2 at 100kHz, a small leakage current density of 6.4 × 10-9 A/cm2 at 1.8 V and 125℃, a breakdown electric field of 2.6 MV/cm as well as voltage coefficients of capacitance (VCCs) of 2110ppm/V2 and -824 ppm/V at 100kHz. Further, it is deduced that the conduction mechanism in the high field range is dominated by the Poole-Frenkel emission, and the conduction mechanism in the low field range is possibly related to trap-assisted tunnelling. Finally, comparison of various HfO2 MIM capacitors is present,suggesting that the present MIM capacitor is a promising candidate for future rf integrated circuit application.

  13. Monomeric malonate precursors for the MOCVD of HfO2 and ZrO2 thin films.

    Science.gov (United States)

    Pothiraja, Ramasamy; Milanov, Andrian; Parala, Harish; Winter, Manuela; Fischer, Roland A; Devi, Anjana

    2009-01-28

    New Hf and Zr malonate complexes have been synthesized by the reaction of metal amides with different malonate ligands (L = dimethyl malonate (Hdmml), diethyl malonate (Hdeml), di-tert-butyl malonate (Hdbml) and bis(trimethylsilyl) malonate (Hbsml)). Homoleptic eight-coordinated monomeric compounds of the type ML4 were obtained for Hf with all the malonate ligands employed. In contrast, for Zr only Hdmml and Hdeml yielded the eight-coordinated monomeric compounds of the type ML4, while using the bulky Hdbml and Hbsml ligands resulted into mixed alkoxo-malonato six-coordinated compounds of the type [ML2(OR)2]. Single crystal X-ray diffraction studies of all the compounds are presented and discussed, and they are found to be monomeric. The complexes are solids and in solution, they retain their monomeric nature as evidenced by NMR measurements. Compared to the classical beta-diketonate complexes, [M(acac)4] and [M(thd)4] (M = Hf, Zr; acac: acetylacetonate; thd: tetramethylheptadione), the new malonate compounds are more volatile, decompose at lower temperatures and have lower melting points. In particular, the homoleptic diethyl malonate complexes of Hf and Zr melt at temperatures as low as 62 degrees C. In addition, the compounds are very stable in air and can be sublimed quantitatively. The promising thermal properties makes these compounds interesting for metal-organic chemical vapor deposition (MOCVD). This was demonstrated by depositing HfO2 and ZrO2 thin films successfully with two representative Hf and Zr complexes.

  14. Solid-state dewetting of ultra-thin Au films on SiO2 and HfO2

    Science.gov (United States)

    Seguini, G.; Llamoja Curi, J.; Spiga, S.; Tallarida, G.; Wiemer, C.; Perego, M.

    2014-12-01

    Ultra-thin Au films with thickness (h) ranging from 0.5 to 6.0 nm were deposited at room temperature (RT) by means of e-beam evaporation on SiO2 and HfO2. Due to the natural solid-state dewetting (SSD) of the as-deposited films, Au nanoparticles (NPs) were formed on the substrates. By properly adjusting the h value, the size and the density of the Au NPs can be finely tuned. For h = 0.5 nm, spherical-like Au NPs with diameter below 5 nm and density in the order of 1012 Au NPs cm-2 were obtained without any additional thermal treatment independently from the substrate. The dependence of the Au NPs characteristics on the substrate starts to be effective for h ≥ 1.0 nm where the Au NPs diameter is in the 5-10 nm range and the density is around 1011 Au NPs cm-2. The effect of a subsequent high temperature (400-800 °C) annealing in N2 atmosphere on the Au NPs was investigated as well. For h ≤ 1.0 nm, the Au NPs characteristics evidenced an excellent thermal stability. Whereas the thermal treatment affects the cristallinity of the Au NPs. For the thicker films (2.0 ≤ h ≤ 6.0 nm), the thermal treatment becomes effective to induce the SSD. The proposed methodology can be exploited for the synthesis of Au NPs with diameter below 10 nm on different substrates at RT.

  15. The impact of ultrathin Al2O3 films on the electrical response of p-Ge/Al2O3/HfO2/Au MOS structures

    Science.gov (United States)

    Botzakaki, M. A.; Skoulatakis, G.; Kennou, S.; Ladas, S.; Tsamis, C.; Georga, S. N.; Krontiras, C. A.

    2016-09-01

    It is well known that the most critical issue in Ge CMOS technology is the successful growth of high-k gate dielectrics on Ge substrates. The high interface quality of Ge/high-k dielectric is connected with advanced electrical responses of Ge based MOS devices. Following this trend, atomic layer deposition deposited ultrathin Al2O3 and HfO2 films were grown on p-Ge. Al2O3 acts as a passivation layer between p-Ge and high-k HfO2 films. An extensive set of p-Ge/Al2O3/HfO2 structures were fabricated with Al2O3 thickness ranging from 0.5 nm to 1.5 nm and HfO2 thickness varying from 2.0 nm to 3.0 nm. All structures were characterized by x-ray photoelectron spectroscopy (XPS) and AFM. XPS analysis revealed the stoichiometric growth of both films in the absence of Ge sub-oxides between p-Ge and Al2O3 films. AFM analysis revealed the growth of smooth and cohesive films, which exhibited minimal roughness (~0.2 nm) comparable to that of clean bare p-Ge surfaces. The electrical response of all structures was analyzed by C-V, G-V, C-f, G-f and J-V characteristics, from 80 K to 300 K. It is found that the incorporation of ultrathin Al2O3 passivation layers between p-Ge and HfO2 films leads to superior electrical responses of the structures. All structures exhibit well defined C-V curves with parasitic effects, gradually diminishing and becoming absent below 170 K. D it values were calculated at each temperature, using both Hill-Coleman and Conductance methods. Structures of p-Ge/0.5 nm Al2O3/2.0 nm HfO2/Au, with an equivalent oxide thickness (EOT) equal to 1.3 nm, exhibit D it values as low as ~7.4  ×  1010 eV-1 cm-2. To our knowledge, these values are among the lowest reported. J-V measurements reveal leakage currents in the order of 10-1 A cm-2, which are comparable to previously published results for structures with the same EOT. A complete mapping of the energy distribution of D its into the energy bandgap of p-Ge, from the valence band towards midgap, is also reported. These promising results contribute to the challenge of switching to high-k dielectrics as gate materials for future high-performance metal-oxide-semiconductor field-effect transistors based on Ge substrates. Making the switch to such devices would allow us toexploit its superior properties.

  16. Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric

    Science.gov (United States)

    Xia, Pengkun; Feng, Xuewei; Ng, Rui Jie; Wang, Shijie; Chi, Dongzhi; Li, Cequn; He, Zhubing; Liu, Xinke; Ang, Kah-Wee

    2017-01-01

    Two-dimensional layered semiconductors such as molybdenum disulfide (MoS2) at the quantum limit are promising material for nanoelectronics and optoelectronics applications. Understanding the interface properties between the atomically thin MoS2 channel and gate dielectric is fundamentally important for enhancing the carrier transport properties. Here, we investigate the frequency dispersion mechanism in a metal-oxide-semiconductor capacitor (MOSCAP) with a monolayer MoS2 and an ultra-thin HfO2 high-k gate dielectric. We show that the existence of sulfur vacancies at the MoS2-HfO2 interface is responsible for the generation of interface states with a density (Dit) reaching ~7.03 × 1011 cm−2 eV−1. This is evidenced by a deficit S:Mo ratio of ~1.96 using X-ray photoelectron spectroscopy (XPS) analysis, which deviates from its ideal stoichiometric value. First-principles calculations within the density-functional theory framework further confirms the presence of trap states due to sulfur deficiency, which exist within the MoS2 bandgap. This corroborates to a voltage-dependent frequency dispersion of ~11.5% at weak accumulation which decreases monotonically to ~9.0% at strong accumulation as the Fermi level moves away from the mid-gap trap states. Further reduction in Dit could be achieved by thermally diffusing S atoms to the MoS2-HfO2 interface to annihilate the vacancies. This work provides an insight into the interface properties for enabling the development of MoS2 devices with carrier transport enhancement. PMID:28084434

  17. Atomic-layer-deposited Al2O3 and HfO2 on InAlAs: A comparative study of interfacial and electrical characteristics

    Science.gov (United States)

    Wu, Li-Fan; Zhang, Yu-Ming; Lv, Hong-Liang; Zhang, Yi-Men

    2016-10-01

    Al2O3 and HfO2 thin films are separately deposited on n-type InAlAs epitaxial layers by using atomic layer deposition (ALD). The interfacial properties are revealed by angle-resolved x-ray photoelectron spectroscopy (AR-XPS). It is demonstrated that the Al2O3 layer can reduce interfacial oxidation and trap charge formation. The gate leakage current densities are 1.37 × 10-6 A/cm2 and 3.22 × 10-6 A/cm2 at +1 V for the Al2O3/InAlAs and HfO2/InAlAs MOS capacitors respectively. Compared with the HfO2/InAlAs metal-oxide-semiconductor (MOS) capacitor, the Al2O3/InAlAs MOS capacitor exhibits good electrical properties in reducing gate leakage current, narrowing down the hysteresis loop, shrinking stretch-out of the C-V characteristics, and significantly reducing the oxide trapped charge (Q ot) value and the interface state density (D it). Project supported by the National Basic Research Program of China (Grant No. 2010CB327505), the Advanced Research Foundation of China (Grant No. 914xxx803-051xxx111), the National Defense Advance Research Project, China (Grant No. 513xxxxx306), the National Natural Science Foundation of China (Grant No. 51302215), the Scientific Research Program Funded by Shaanxi Provincial Education Department, China (Grant No. 14JK1656), and the Science and Technology Project of Shaanxi Province, China (Grant No. 2016KRM029).

  18. Optical properties of the Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings

    Science.gov (United States)

    Marszałek, Konstanty; Winkowski, Paweł; Jaglarz, Janusz

    2014-01-01

    Investigations of bilayer and trilayer Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings are presented in this paper. The oxide films were deposited on a heated quartz glass by e-gun evaporation in a vacuum of 5 × 10-3 [Pa] in the presence of oxygen. Depositions were performed at three different temperatures of the substrates: 100 °C, 200 °C and 300 °C. The coatings were deposited onto optical quartz glass (Corning HPFS). The thickness and deposition rate were controlled with Inficon XTC/2 thickness measuring system. Deposition rate was equal to 0.6 nm/s for Al2O3, 0.6 nm - 0.8 nm/s for HfO2 and 0.6 nm/s for SiO2. Simulations leading to optimization of the thin film thickness and the experimental results of optical measurements, which were carried out during and after the deposition process, have been presented. The optical thickness values, obtained from the measurements performed during the deposition process were as follows: 78 nm/78 nm for Al2O3/SiO2 and 78 nm/156 nm/78 nm for Al2O3/HfO2/SiO2. The results were then checked by ellipsometric technique. Reflectance of the films depended on the substrate temperature during the deposition process. Starting from 240 nm to the beginning of visible region, the average reflectance of the trilayer system was below 1 % and for the bilayer, minima of the reflectance were equal to 1.6 %, 1.15 % and 0.8 % for deposition temperatures of 100 °C, 200 °C and 300 °C, respectively.

  19. Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric

    Science.gov (United States)

    Xia, Pengkun; Feng, Xuewei; Ng, Rui Jie; Wang, Shijie; Chi, Dongzhi; Li, Cequn; He, Zhubing; Liu, Xinke; Ang, Kah-Wee

    2017-01-01

    Two-dimensional layered semiconductors such as molybdenum disulfide (MoS2) at the quantum limit are promising material for nanoelectronics and optoelectronics applications. Understanding the interface properties between the atomically thin MoS2 channel and gate dielectric is fundamentally important for enhancing the carrier transport properties. Here, we investigate the frequency dispersion mechanism in a metal-oxide-semiconductor capacitor (MOSCAP) with a monolayer MoS2 and an ultra-thin HfO2 high-k gate dielectric. We show that the existence of sulfur vacancies at the MoS2-HfO2 interface is responsible for the generation of interface states with a density (Dit) reaching ~7.03 × 1011 cm-2 eV-1. This is evidenced by a deficit S:Mo ratio of ~1.96 using X-ray photoelectron spectroscopy (XPS) analysis, which deviates from its ideal stoichiometric value. First-principles calculations within the density-functional theory framework further confirms the presence of trap states due to sulfur deficiency, which exist within the MoS2 bandgap. This corroborates to a voltage-dependent frequency dispersion of ~11.5% at weak accumulation which decreases monotonically to ~9.0% at strong accumulation as the Fermi level moves away from the mid-gap trap states. Further reduction in Dit could be achieved by thermally diffusing S atoms to the MoS2-HfO2 interface to annihilate the vacancies. This work provides an insight into the interface properties for enabling the development of MoS2 devices with carrier transport enhancement.

  20. Scytonemin Plays a Potential Role in Stabilizing the Exopolysaccharidic Matrix in Terrestrial Cyanobacteria.

    Science.gov (United States)

    Gao, Xiang

    2017-02-01

    Cyanobacteria are photosynthetic oxygen-evolving prokaryotes that are distributed in diverse habitats. They synthesize the ultraviolet (UV)-screening pigments, scytonemin (SCY) and mycosporine-like amino acids (MAAs), located in the exopolysaccharide (EPS) matrix. Multiple roles for both pigments have gradually been recognized, such as sunscreen ability, antioxidant activity, and heat dissipation from absorbed UV radiation. In this study, a filamentous terrestrial cyanobacterium Nostoc flagelliforme was used to evaluate the potential stabilizing role of SCY on the EPS matrix. SCY (∼3.7 %) was partially removed from N. flagelliforme filaments by rinsing with 100 % acetone for 5 s. The physiological damage to cells resulting from this treatment, in terms of photosystem II activity parameter Fv/Fm, was repaired after culturing the sample for 40 h. The physiologically recovered sample was further desiccated by natural or rapid drying and then allowed to recovery for 24 h. Compared with the normal sample, a relatively slower Fv/Fm recovery was observed in the SCY-partially removed sample, suggesting that the decreased SCY concentration in the EPS matrix caused cells to suffer further damage upon desiccation. In addition, the SCY-partially removed sample could allow the release of MAAs (∼25 %) from the EPS matrix, while the normal sample did not. Therefore, damage caused by drying of the former resulted from at least the reduction of structural stability of the EPS matrix as well as the loss of partial antioxidant compounds. Considering that an approximately 4 % loss of SCY led to this significant effect, the structurally stabilizing potential of SCY on the EPS matrix is crucial for terrestrial cyanobacteria survival in complex environments.

  1. Rewriting the Matrix of Life. Biomedia Between Ecological Crisis and Playful Actions

    Directory of Open Access Journals (Sweden)

    Christoph Neubert, Serjoscha Wiemer

    2014-09-01

    Full Text Available The paper discusses concepts of ‘nature’ and ‘life’ as subjected to historical changes. The 21st century seems to be obsessed with ‘life’ and ‘nature’, which are reconfigured as objects of simulation practices and of a multitude of technoscientific enterprises as well as of political struggle. The historical influences and epistemological shifts of systems thinking are significant within two distinctive and interwoven fields: On the one hand the discourse of environmentalism with the paradigm of ecological crises, centered around ideas of resource management, sustainability, the general idea of an ‘endangered nature’ and the interconnectedness of global politics and individual actions. On the other hand the optimistic promises of artificial life, with synthetic biology and digital cyborg technologies as its avantgarde, which are very much driven by the idea of technoscientific mastery to surpass natures ‘weakness’ and by desires to improve ‘life’ and to even refashion ‘life itself’. On the field of historical ecology, concepts of systems thinking are traced back to the middle of the 19th century, where ecological thought emerged at the intersections of biology and geography. Meandering between vitalistic, holistic, and mechanistic concepts, between living and non-living elements, systems ecology finally substitutes ‘nature’, which in turn is re-established in its new ‘gestalt’ as computer simulated world model since the early 1970s. Resurrected as an interrelation of system variables at the level of global simulations ‘nature’ strikes as a zombie. As a second turning point of the rewriting of the matrix, of life we will discuss the advance of ‘games’ since the early 1970ies, with the example of ‘Game of life’ (‘Life’ as a significant landmark. When ‘life’ becomes ‘Life’, it is by computerized modeling in terms of dynamic processes. Computer games can be thought of as instances of

  2. Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications

    OpenAIRE

    Kundu, Souvik; Maurya, Deepam; Clavel, Michael; Zhou, Yuan; Nripendra N. Halder; Hudait, Mantu K.; Banerji, Pallab; Priya, Shashank

    2015-01-01

    We introduce a novel lead-free ferroelectric thin film (1-x)BaTiO3-xBa(Cu1/3Nb2/3)O3 (x = 0.025) (BT-BCN) integrated on to HfO2 buffered Si for non-volatile memory (NVM) applications. Piezoelectric force microscopy (PFM), x-ray diffraction, and high resolution transmission electron microscopy were employed to establish the ferroelectricity in BT-BCN thin films. PFM study reveals that the domains reversal occurs with 180° phase change by applying external voltage, demonstrating its effectivene...

  3. Retention loss in the ferroelectric (SrBi2Ta2O9)-insulator (HfO2)-silicon structure studied by piezoresponse force microscopy

    Science.gov (United States)

    Zhang, Z. H.; Zhong, X. L.; Zhang, Y.; Wang, J. B.; Lu, C. J.; Ye, W. N.; Zhou, Y. C.

    2012-04-01

    Metal-ferroelectric-insulator-silicon (MFIS) structures with SrBi2Ta2O9 as ferroelectric thin film and HfO2 as insulating buffer layer were fabricated by pulsed-laser deposition. The interfaces and memory window of the MFIS structure were investigated. Piezoresponse force microscopy was used to observe the change of domain images in order to investigate the retention characteristics, which demonstrated that the MFIS structure experiences retention loss via a random-walk-type process, identified by a stretched exponential-decay model. The corresponding mechanism was discussed based on the time-dependent depolarization field.

  4. Effects of packing materials on the sensitivity of RadFET with HfO2 gate dielectric for electron and photon sources

    Science.gov (United States)

    Kahraman, A.; Yilmaz, E.; Kaya, S.; Aktag, A.

    2015-10-01

    The radiation sensing field effect transistor (RadFET) with SiO2 gate oxide has been commonly used as a device component or dosimetry system in the radiation applications such as space research, radiotherapy, and high-energy physics experiments. However, alternative gate oxides and more suitable packaging materials are still demanded for these dosimeters. HfO2 is one of the most attractive gate oxide materials that are currently under investigation by many researchers. In this study, Monte Carlo simulations of the average deposited energy in RadFET dosimetry systems with different package lid materials for point electron and photon sources were performed with the aim of evaluating the effects of package lids on the sensitivity of the RadFET by using HfO2 as a gate dielectric material. The RadFET geometry was defined in a PENGEOM package and electron-photon transport was simulated by a PENELOPE code. The relatively higher average deposited energies in the sensitive region (HfO2 layer) for electron energies of 250 keV-20 MeV were obtained from the RadFET with the Al2O3 package lid despite of some deviations from the general tendency. For the photon energies of 20-100 keV, the average amount of energy deposited in RadFET with Al2O3 package was higher compared with the other capped devices. The average deposited energy in the sensitive region was quite close to each other at 200 keV for both capped and uncapped devices. The difference in the average deposited energy of the RadFET with different package lid materials was not high for photon energies of 200-1200 keV. The increase in the average deposited energy in the HfO2 layer of the RadFET with Ta package lid was higher compared with the other device configurations above 3 MeV.

  5. Damage on HfO2/SiO2 high-reflecting coatings under single and multiple Nd:YAG laser pulse irradiation

    Institute of Scientific and Technical Information of China (English)

    Weidong Gao; Tao Wang; Yuanan Zhao; Jianda Shao

    2005-01-01

    The single- and multi-shot damage behaviors of HfO2/SiO2 high-reflecting (HR) coatings under Nd:YAG laser exposure were investigated. Fundamental aspects of multi-shot laser damage, such as the instability due to pulse-to-pulse accumulation of absorption defect and structural defect effect, and the mechanism of laser induced defect generation, are considered. It was found in multi-shot damage, the main factors influencing laser-induced damage threshold (LIDT) are accumulation of irreversible changes of structural defects and thermal stress that induced by thermal density fluctuations.

  6. Examination of flatband and threshold voltage tuning of HfO2/TiN field effect transistors by dielectric cap layers

    Science.gov (United States)

    Guha, S.; Paruchuri, V. K.; Copel, M.; Narayanan, V.; Wang, Y. Y.; Batson, P. E.; Bojarczuk, N. A.; Linder, B.; Doris, B.

    2007-02-01

    The authors have examined the role of sub nanometer La2O3 and LaN cap layers interposed in Si /HfO2/TiN high-k gate dielectric stacks in tuning the flatband and threshold voltages of capacitors and transistors. High performance, band edge n metal oxide field effect transistors with channel lengths down to 60nm may be fabricated without significant compromise in mobility, electrical thickness, and threshold voltage. They have carried out a microstructural evaluation of these stacks and correlated these results with the electrical behavior of the devices.

  7. On the etching characteristics and mechanisms of HfO2 thin films in CF4/O2/Ar and CHF3/O2/Ar plasma for nano-devices.

    Science.gov (United States)

    Lim, Nomin; Efremov, Alexander; Yeom, Geun Young; Kwon, Kwang-Ho

    2014-12-01

    The study of etching characteristics and mechanisms for HfO2 and Si in CF4/O2/Ar and CHF3/O2/Ar inductively-coupled plasmas was carried out. The etching rates of HfO2 thin films as well as the HfO2/Si etching selectivities were measured as functions of Ar content in a feed gas (0-50% Ar) at fixed fluorocarbon gas content (50%), gas pressure (6 mTorr), input power (700 W), bias power (200 W), and total gas flow rate (40 sccm). Plasma parameters as well as the differences in plasma chemistries for CF4- and CHF3-based plasmas were analyzed using Langmuir probe diagnostics and 0-dimensional plasma modeling. It was found that, in both gas systems, the non-monotonic (with a maximum at about 15-20% Ar) HfO2 etching rate does not correlate with monotonic changes of F atom flux and ion energy flux. It was proposed that, under the given set of experimental conditions, the HfO2 etching process is affected by the factors determining the formation and decomposition kinetics of the fluorocarbon polymer layer. These factor are the fluxes of CF(x) (x = 1, 2) radicals, O atoms and H atoms.

  8. Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications

    Science.gov (United States)

    Kundu, Souvik; Maurya, Deepam; Clavel, Michael; Zhou, Yuan; Halder, Nripendra N.; Hudait, Mantu K.; Banerji, Pallab; Priya, Shashank

    2015-02-01

    We introduce a novel lead-free ferroelectric thin film (1-x)BaTiO3-xBa(Cu1/3Nb2/3)O3 (x = 0.025) (BT-BCN) integrated on to HfO2 buffered Si for non-volatile memory (NVM) applications. Piezoelectric force microscopy (PFM), x-ray diffraction, and high resolution transmission electron microscopy were employed to establish the ferroelectricity in BT-BCN thin films. PFM study reveals that the domains reversal occurs with 180° phase change by applying external voltage, demonstrating its effectiveness for NVM device applications. X-ray photoelectron microscopy was used to investigate the band alignments between atomic layer deposited HfO2 and pulsed laser deposited BT-BCN films. Programming and erasing operations were explained on the basis of band-alignments. The structure offers large memory window, low leakage current, and high and low capacitance values that were easily distinguishable even after ~106 s, indicating strong charge storage potential. This study explains a new approach towards the realization of ferroelectric based memory devices integrated on Si platform and also opens up a new possibility to embed the system within current complementary metal-oxide-semiconductor processing technology.

  9. Optimum Ferroelectric Film Thickness in Metal-Ferroelectric-Insulator-Semiconductor Structures Composed of Pt, (Bi,La)4Ti3O12, HfO2, and Si

    Science.gov (United States)

    Takahashi, Kazuhiro; Aizawa, Koji; Ishiwara, Hiroshi

    2006-06-01

    The optimum ferroelectric film thickness in metal-ferroelectric-insulator-semiconductor (MFIS) structures is investigated, in which 80- to 560-nm-thick (Bi,La)4Ti3O12 (BLT) films are deposited on HfO2 buffer layers using a sol-gel spin-coating method. It is found from electrical characteristics of MFIS diodes as well as MIS diodes that the HfO2 layers act as excellent barriers for suppressing both leakage current and atom interdiffusion when they are annealed in a rapid-thermal-annealing furnace at 900 °C for 1 min in O2 flow. In MFIS diodes, the memory window width in capacitance-voltage (C-V) characteristics is found to increase from 0.2 to 1.6 V, as ferroelectric film thickness increases from 80 to 560 nm. On the basis of these results, the relationships among memory window width, ferroelectric film thickness, and the optimum applied voltage are discussed. Finally, it is shown from the capacitance change measured over 24 h that data retention characteristics are excellent in samples with BLT films thicker than 240 nm.

  10. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition

    Science.gov (United States)

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-06-01

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption.

  11. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.

    Science.gov (United States)

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-06-17

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption.

  12. Memory Effect of Metal-Oxide-Silicon Capacitors with Self-Assembly Double-Layer Au Nanocrystals Embedded in Atomic-Layer-Deposited HfO_2 Dielectric

    Institute of Scientific and Technical Information of China (English)

    HUANG Yue; GOU Hong-Yan; SUN Qing-Qing; DING Shi-Jin; ZHANG Wei; ZHANG Shi-Li

    2009-01-01

    We report the chemical self-assembly growth of Au nanocrystals on atomic-layer-deposited HfO_2 films aminosilanized by (3-Aminopropyl)-trimethoxysilane aforehand for memory applications.The resulting Au nanocrystals show a density of about 4×10~(11) cm~(-2) and a diameter range of 5-8nm.The metal-oxide-silicon capacitor with double-layer Au nanocrystals embedded in HfO2 dielectric exhibits a large C - V hysteresis window of 11.9 V for ±11 V gate voltage sweeps at 1 MHz, a fiat-band voltage shift of 1.5 V after the electrical stress under 7 V for I ms, a leakage current density of 2.9 ×10~(-8) A/cm~(-2) at 9 V and room temperature.Compared to single-layer Au nanocrystals, the double-layer Au nanocrystals increase the hysteresis window significantly, and the underlying mechanism is thus discussed.

  13. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition

    Science.gov (United States)

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-01-01

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption. PMID:27312225

  14. Characterization of Pt/Bi3.15Nd0.85Ti3O12/HfO2/Si structure using a hafnium oxide as buffer layer for ferroelectric-gate field effect transistors

    Science.gov (United States)

    Xie, Dan; Luo, Yafeng; Han, Xueguang; Ren, Tianling; Liu, Litian

    2009-12-01

    We have investigated the structural and electrical properties of metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with Bi3.15Nd0.85Ti3O12 (BNdT) thin film deposited on Si and hafnium oxide (HfO2)/Si substrates. Microstructural analysis reveals the formation of well-crystallized BNdT perovskite film and good interface between BNdT film and HfO2 buffer layer. Pt/BNdT/HfO2/Si structure exhibits a memory window of 1.12 V at an operation voltage of 3.5 V. The width of memory window for the MFIS structure varies with increasing thickness of HfO2 layer, and 4-nm-thickness is optimum. The results from the fatigue test indicate a slight degradation of the memory window after 1010 switching cycles. These properties are encouraging for the development of ferroelectric memory transistors.

  15. Ferroelectric-field-effect-enhanced resistance performance of TiN/Si:HfO2/oxygen-deficient HfO2/TiN resistive switching memory cells

    Science.gov (United States)

    Jiang, Ran; Wu, Zhengran; Du, Xianghao; Han, Zuyin; Sun, Weideng

    2015-07-01

    Greatly improved resistance performance, including high resistance ratio between the high resistance state and the low resistance state, long-time retention, and reliable endurance, was observed in TiN/Si:HfO2/oxygen-deficient HfO2/TiN memory cells. The enhanced resistance ratio is ascribed to the creation/elimination of an extra barrier in oxygen-deficient HfO2 layer in response to the polarization reversal in the ferroelectric Si:HfO2 layer. Along with the enhanced resistance ratio, the long retention and good endurance make the proposed device a promising candidate for non-volatile resistive memories.

  16. Ferroelectric Properties of Pt/Pb5Ge3O11/Pt and Pt/Pb5Ge3O11/HfO2/Si Structures

    Science.gov (United States)

    Ohara, Shuichiro; Aizawa, Koji; Ishiwara, Hiroshi

    2005-09-01

    The ferroelectric properties of metal-ferroelectric-metal (MFM) capacitors with a Pt/Pb5Ge3O11(PGO)/Pt structure and metal-ferroelectric-insulator-semiconductor (MFIS) diodes with a Pt/PGO/HfO2/Si structure were investigated. C-axis-oriented PGO thin films were formed on both Pt/SiO2/Si and HfO2 (6 nm)/Si structures by a sol-gel method. Typical values of remanent polarization (2Pr), coercive field (2Ec), and dielectric constant in the MFM capacitors were 5.7 μC/cm2, 63 kV/cm, and 50, respectively, and the remanent polarization gradually increased with the switching pulses for up to 1 × 1010 cycles. It was also found that the memory window in the MFIS diodes with a 340-nm-thick PGO film was as large as 1.3 V.

  17. Influence of Ti substitution on the electrical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for nonvolatile memory applications

    Science.gov (United States)

    Pi-Chun Juan, Trevor; Liu, Yu-Wei

    2011-05-01

    Metal-ferroelectric (Ti-substituted BiFeO3)-insulator (HfO2)-semiconductor structures have been fabricated via the cosputtering technique. Ti4+ substitution at the Fe site was investigated through x-ray photoelectron spectra and x-ray diffraction patterns at postannealing temperatures of 500 to 700 °C. The capacitance-voltage memory windows as functions of the insulator film thickness and the dc power for Ti were measured and compared. A memory window of 3.1 V was obtained at a sweep voltage of 8 V under O2-rich conditions. The leakage current and the charge injection effect, especially gate injection, can be greatly improved by Ti substitution. The effects of the postannealing temperature and the substitution amount on the leakage current can be well explained by the defect reaction model.

  18. 0.532-μm laser conditioning of HfO2/SiO2 third harmonic separator fabricated by electron-beam evaporation

    Institute of Scientific and Technical Information of China (English)

    Dawei Li; Yuan'an Zhao; Jianda Shao; Zhengxiu Fan; Hongbo He

    2008-01-01

    The 0.532-μm laser conditioning of HfO2/SiO2 third harmonic separator fabricated by electron-beam evaporation (EBE) was studied.The laser induced damage threshold (LIDT) of the separator determined by 1-on-1 test is 9.1 J/cm2 and it is 15.2 J/cm2 after laser conditioning determined by raster scanning.Two kinds of damage morphologies,taper pits and flat bottom pits,are found on the sample surface and they show different damage behaviors.The damage onset of taper pits does not change obviously and the laser conditioning effect is contributed to the flat bottom pits,which limits the application of laser conditioning.

  19. Epitaxial growth and characterization of Gd2O3-doped HfO2 film on Ge (001) substrates with zero interface layer

    Institute of Scientific and Technical Information of China (English)

    张心强; 屠海令; 魏峰; 熊玉华; 杨萌萌; 赵洪滨; 杜军; 王文武

    2013-01-01

    The GHO (Gd2O3-doped HfO2) films were epitaxially grown on Ge (001) substrates adopting cube-on-cube mode with zero interface layer using pulsed laser deposition (PLD). Reflection high-energy electron diffraction (RHEED) and high-resolution transmission electron microscopy (HRTEM) observation revealed a sharp interface of GHO/Ge and orientation relationship corre-sponding to (001)GHO//(001)Ge and [011] GHO//[011]Ge. The band offset for GHO/Ge stack was evaluated to be 3.92 eV for va-lence band and 1.38 eV for conduction band by X-ray photoelectron spectrum. Small equivalent oxide thickness (0.49 nm) and inter-face state density (7×1011 cm-2) were achieved from Au/Ti/GHO/Ge/Al capacitors.

  20. Extended x-ray absorption fine structure measurements on radio frequency magnetron sputtered HfO2 thin films deposited with different oxygen partial pressures.

    Science.gov (United States)

    Maidul Haque, S; Nayak, C; Bhattacharyya, Dibyendu; Jha, S N; Sahoo, N K

    2016-03-20

    Two sets of HfO2 thin film have been deposited by the radio frequency magnetron sputtering technique at various oxygen partial pressures, one set without any substrate bias and another set with a 50 W pulsed dc substrate bias. The films have been characterized by extended x-ray absorption fine structure (EXAFS) measurements at the Hf L3 edge, and the structural information obtained from analysis of the EXAFS data has been used to explain the macroscopic behavior of the refractive index obtained from spectroscopic ellipsometry measurements. It has been observed that the variation of refractive index with oxygen partial pressure depends on the Hf-Hf bond length for the set of films deposited without substrate bias, while for the other set of films deposited with pulsed dc substrate bias, it depends on the oxygen coordination of the nearest neighbor shell surrounding Hf sites.

  1. Study of the picosecond laser damage in HfO2/SiO2-based thin-film coatings in vacuum

    Science.gov (United States)

    Kozlov, A. A.; Papernov, S.; Oliver, J. B.; Rigatti, A.; Taylor, B.; Charles, B.; Smith, C.

    2016-12-01

    The laser damage thresholds of various HfO2/SiO2-based thin film coatings, including multilayer dielectric (MLD) gratings and high reflectors of different designs, prepared by E-beam and Plasma Ion Assisted Deposition (PIAD) methods, were investigated in vacuum, dry nitrogen, and after air-vacuum cycling. Single and multiple-pulse damage thresholds and their pulse-length scaling in the range of 0.6 to 100 ps were measured using a vacuum damage test station operated at 1053nm. The E-beam deposited high reflectors showed higher damage thresholds with square-root pulse-length scaling, as compared to PIAD coatings, which typically show slower power scaling. The former coatings appeared to be not affected by air/vacuum cycling, contrary to PIAD mirrors and MLD gratings. The relation between 1-on-1 and N-on-1 damage thresholds was found dependent on coating design and deposition methods.

  2. Evolution of interface chemistry and dielectric properties of HfO2/Ge gate stack modulated by Gd incorporation and thermal annealing

    Directory of Open Access Journals (Sweden)

    Gang He

    2016-02-01

    Full Text Available In current work, effects of rapid thermal annealing (RTA on the interface chemistry and electrical properties of Gd-doped HfO2 (HGO/Ge stack have been investigated systematically. It has been demonstrated that the presence of GeOx interfacial layer between HfGdO and Ge is unavoidable and appropriate annealing can improve metal-oxide-semiconductor device characteristics such as interface state density, accumulation capacitance, frequency dispersion, and leakage current. The involved leakage current conduction mechanisms for metal-oxide-semiconductor (MOS capacitors based on sputtered HGO/Ge gate stacks with optimal annealed temperature also have been discussed in detail. As a result, the Al/HGO barrier height and the band offset of HGO/Ge gate stack have been determined precisely.

  3. Investigating the Temperature Effects on ZnO, TiO2, WO3 and HfO2 Based Resistive Random Access Memory (RRAM Devices

    Directory of Open Access Journals (Sweden)

    T.D. Dongale

    2016-11-01

    Full Text Available In this paper, we report the effect of filament radius and filament resistivity on the ZnO, TiO2, WO3 and HfO2 based Resistive Random Access Memory (RRAM devices. We resort to the thermal reaction model of RRAM for the present analysis. The results substantiate decrease in saturated temperature with increase in the radius and resistivity of filament for the investigated RRAM devices. Moreover, a sudden change in the saturated temperature at a lower value of filament radius and resistivity is observed as against the steady change at the medium and higher value of the filament radius and resistivity. Results confirm the dependence of saturated temperature on the filament size and resistivity in RRAM.

  4. Comprehensive studies of IR to UV light intensification by nodular defects in HfO2/SiO2 multilayer mirrors

    Science.gov (United States)

    Smalakys, Linas; Batavičiūtė, Gintarė; Pupka, Egidijus; Melninkaitis, Andrius

    2014-10-01

    Nodular defects tend to limit laser-induced damage threshold (LIDT) of multilayer dielectric coatings frequently used for laser applications. Cross-sections of localized damage morphologies correlate well with light intensifi- cation patterns caused by defect geometries. In vast majority of studies electric field enhancement in nodular defects was investigated for infrared spectral region. In this work theoretical analysis has been extended for IR - UV range. Light intensification in HfO2/SiO2 multilayer mirror coating was studied numerically. The analysis of obtained results indicates that phenomena is very sensitive to almost every investigated parameter. It was also found that field enhancement effect can be reached within distinct material layers (either of low or high refractive index). The discussion and insights complementing existing knowledge on nodular defects were made.

  5. Robust Low Voltage Program-Erasable Cobalt-Nanocrystal Memory Capacitors with Multistacked Al2O3/HfO2/Al2O3 Tunnel Barrier

    Institute of Scientific and Technical Information of China (English)

    LIAO Zhong-Wei; GOU Hong-Yan; HUANG Yue; SUN Qing-Qing; DING Shi-Jin; ZHANG Wei; ZHANG Shi-Li

    2009-01-01

    An atomic-layer-deposited Al2O3/HfO2/Al2O3 (A/H/A) tunnel barrier is investigated for Co nanocrystal memory capacitors. Compared to a single Al2O3 tunnel barrier, the A/H/A barrier can significantly increase the hysteresis window, i.e., an increase by 9 V for ±12 V sweep range. This is attributed to a marked decrease in the energy barriers of charge injections for the A/H/A tunnel barrier. Further, the Co-nanocrystal memory capacitor with the A/H/A tunnel barrier exhibits a memory window as large as 4.1 V for 100 /us program/erase at a low voltage of ±7 V, which is due to fast charge injection rates, i.e., about 2.4 × 1016 cm-2s-1 for electrons and 1.9×1016 cm-2s-1 for holes.

  6. Electrical Characteristics of the Uniaxial-Strained nMOSFET with a Fluorinated HfO2/SiON Gate Stack

    Directory of Open Access Journals (Sweden)

    Yung-Yu Chen

    2014-03-01

    Full Text Available The channel fluorine implantation (CFI process was integrated with the Si3N4 contact etch stop layer (SiN CESL uniaxial-strained n-channel metal-oxide-semiconductor field-effect transistor (nMOSFET with the hafnium oxide/silicon oxynitride (HfO2/SiON gate stack. The SiN CESL process clearly improves basic electrical performance, due to induced uniaxial tensile strain within the channel. However, further integrating of the CFI process with the SiN CESL-strained nMOSFET exhibits nearly identical transconductance, subthreshold swing, drain current, gate leakage and breakdown voltage, which indicates that the strain effect is not affected by the fluorine incorporation. Moreover, hydrogen will diffuse toward the interface during the SiN deposition, then passivate dangling bonds to form weak Si-H bonds, which is detrimental for channel hot electron stress (CHES. Before hydrogen diffusion, fluorine can be used to terminate oxygen vacancies and dangling bonds, which can create stronger Hf-F and Si-F bonds to resist consequent stress. Accordingly, the reliability of constant voltage stress (CVS and CHES for the SiN CESL uniaxial-strained nMOSFET can be further improved by the fluorinated HfO2/SiON using the CFI process. Nevertheless, the nMOSFET with either the SiN CESL or CFI process exhibits less charge detrapping, which means that a greater part of stress-induced charges would remain in the gate stack after nitrogen (SiN CESL or fluorine (CFI incorporation.

  7. Carbon-coated ZnO mat passivation by atomic-layer-deposited HfO2 as an anode material for lithium-ion batteries.

    Science.gov (United States)

    Jung, Mi-Hee

    2017-11-01

    ZnO has had little consideration as an anode material in lithium-ion batteries compared with other transition-metal oxides due to its inherent poor electrical conductivity and large volume expansion upon cycling and pulverization of ZnO-based electrodes. A logical design and facile synthesis of ZnO with well-controlled particle sizes and a specific morphology is essential to improving the performance of ZnO in lithium-ion batteries. In this paper, a simple approach is reported that uses a cation surfactant and a chelating agent to synthesize three-dimensional hierarchical nanostructured carbon-coated ZnO mats, in which the ZnO mats are composed of stacked individual ZnO nanowires and form well-defined nanoporous structures with high surface areas. In order to improve the performance of lithium-ion batteries, HfO2 is deposited on the carbon-coated ZnO mat electrode via atomic layer deposition. Lithium-ion battery devices based on the carbon-coated ZnO mat passivation by atomic layer deposited HfO2 exhibit an excellent initial discharge and charge capacities of 2684.01 and 963.21mAhg(-1), respectively, at a current density of 100mAg(-1) in the voltage range of 0.01-3V. They also exhibit cycle stability after 125 cycles with a capacity of 740mAhg(-1) and a remarkable rate capability. Copyright © 2017 Elsevier Inc. All rights reserved.

  8. Ion/Ioff ratio enhancement and scalability of gate-all-around nanowire negative-capacitance FET with ferroelectric HfO2

    Science.gov (United States)

    Jang, Kyungmin; Saraya, Takuya; Kobayashi, Masaharu; Hiramoto, Toshiro

    2017-10-01

    We have investigated the energy efficiency and scalability of ferroelectric HfO2 (FE:HfO2)-based negative-capacitance field-effect-transistor (NCFET) with gate-all-around (GAA) nanowire (NW) channel structure. Analytic simulation is conducted to characterize NW-NCFET by varying NW diameter and/or thickness of gate insulator as device structural parameters. Due to the negative-capacitance effect and GAA NW channel structure, NW-NCFET is found to have 5× higher Ion/Ioff ratio than classical NW-MOSFET and 2× higher than double-gate (DG) NCFET, which results in wider design window for high Ion/Ioff ratio. To analyze these obtained results from the viewpoint of the device scalability, we have considered constraints regarding very limited device structural spaces to fit by the gate insulator and NW channel for aggresively scaled gate length (Lg) and/or very tight NW pitch. NW-NCFET still has design point with very thinned gate insulator and/or narrowed NW. Therefore, FE:HfO2-based NW-NCFET is applicable to the aggressively scaled technology node of sub-10 nm Lg and to the very tight NW integration of sub-30 nm NW pitch for beyond 7 nm technology. From 2011 to 2014, he engaged in developing high-speed optical transceiver module as an alternative military service in Republic of Korea. His research interest includes the development of steep slope MOSFETs for high energy-efficient operation and ferroelectric HfO2-based semiconductor devices, and fabrication of nanostructured devices. He joined the IBM T.J. Watson Research Center, Yorktown Heights, NY, in 2010, where he worked on advanced CMOS technologies such as FinFET, nanowire FET, SiGe channel and III-V channel. He was also engaged in launching 14 nm SOI FinFET and RMG technology development. Since 2014, he has been an Associate Professor in Institute of Industrial Science, University of Tokyo, Tokyo, Japan, where he has been working on ultralow power transistor and memory technology. Dr. Kobayashi is a member of IEEE and the Japan Society of Applied Physics. Dr. Hiramoto is a fellow of Japan Society of Applied Physics and a member of IEEE and IEICE. He served as the General Chair of Silicon Nanoelectronics Workshop in 2003 and the Program Chair in 1997, 1999, and 2001. He was on Committee of IEDM from 2003 to 2009. He was the Program Chair of Symposium on VLSI Technology in 2013 and was the General Chair in 2015. He is the Program Chair of International Conference on Solid-State Devices and Materials (SSDM) in 2016.

  9. Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer

    Science.gov (United States)

    Silva, J. P. B.; Faita, F. L.; Kamakshi, K.; Sekhar, K. C.; Moreira, J. Agostinho; Almeida, A.; Pereira, M.; Pasa, A. A.; Gomes, M. J. M.

    2017-01-01

    An enhanced resistive switching (RS) effect is observed in Pt/BaTiO3(BTO)/ITO ferroelectric structures when a thin HfO2:Al2O3 (HAO) dielectric layer is inserted between Pt and BTO. The P-E hysteresis loops reveal the ferroelectric nature of both Pt/BTO/ITO and Pt/HAO/BTO/ITO structures. The relation between the RS and the polarization reversal is investigated at various temperatures in the Pt/HAO/BTO/ITO structure. It is found that the polarization reversal induces a barrier variation in the Pt/HAO/BTO interface and causes enhanced RS, which is suppressed at Curie temperature (Tc = 140 °C). Furthermore, the Pt/HAO/BTO/ITO structures show promising endurance characteristics, with a RS ratio >103 after 109 switching cycles, that make them potential candidates for resistive switching memory devices. By combining ferroelectric and dielectric layers this work provides an efficient way for developing highly efficient ferroelectric-based RS memory devices.

  10. Mechanochemical synthesis and electrical conductivity of nanocrystalline delta-Bi2O3 stabilized by HfO2 and ZrO2

    Directory of Open Access Journals (Sweden)

    LJILJANA KARANOVIĆ

    2009-12-01

    Full Text Available A powder mixture of a-Bi2O3 and HfO2, in the molar ratio 2:3, was mechanochemically treated in a planetary ball mill under air, using zirconium oxide vials and balls as the milling medium. After 50 h of milling, the mechanochemical reaction led to the formation of a nanocrystalline a-Bi2O3 phase (fluorite-type solid solution Bi0.87Hf0.59Zr0.63O3.61, with a crystallite size of 20 nm. The mechanochemical reaction started at a very beginning of milling accompanied by an accumulation of ZrO2 arising from the milling tools. The samples prepared after various milling times were characterized by X-ray powder diffraction and DSC analysis. The electrical properties of the as-milled and pressed Bi0.87Hf0.59Zr0.63O3.61powder were studied using impedance spectroscopy in the temperature range from 100 to 700 °C under air. The electrical conductivity was determined to be 9.43×10-6 and 0.080 S cm-1 for the temperatures of 300 and 700 °C, respectively.

  11. Atomic layer deposition for fabrication of HfO2/Al2O3 thin films with high laser-induced damage thresholds.

    Science.gov (United States)

    Wei, Yaowei; Pan, Feng; Zhang, Qinghua; Ma, Ping

    2015-01-01

    Previous research on the laser damage resistance of thin films deposited by atomic layer deposition (ALD) is rare. In this work, the ALD process for thin film generation was investigated using different process parameters such as various precursor types and pulse duration. The laser-induced damage threshold (LIDT) was measured as a key property for thin films used as laser system components. Reasons for film damaged were also investigated. The LIDTs for thin films deposited by improved process parameters reached a higher level than previously measured. Specifically, the LIDT of the Al2O3 thin film reached 40 J/cm(2). The LIDT of the HfO2/Al2O3 anti-reflector film reached 18 J/cm(2), the highest value reported for ALD single and anti-reflect films. In addition, it was shown that the LIDT could be improved by further altering the process parameters. All results show that ALD is an effective film deposition technique for fabrication of thin film components for high-power laser systems.

  12. Comparative study of atomic-layer-deposited HfO2/Al2O3, Hf0.8Al0.2Ox and Hf0.5Al0.5Ox on N-GaAs

    Science.gov (United States)

    Yu, Xinjiang; Lv, Hongliang; Zhang, Yuming; Zhang, Yimen; Qin, Zaiyang

    2016-11-01

    Interfacial properties of n-GaAs metal-oxide-semiconductor (MOSCAPs) with the gate dielectrics of HfO2/Al2O3, Hf0.8Al0.2Ox and Hf0.5Al0.5Ox are investigated. The results reveal that Hf0.5Al0.5Ox has larger permittivity and lower interface trap density than that of HfO2/Al2O3. In order to explain the result from the physical perspective, the XPS tests of all three samples are performed. It is found that the main reason to form interface trap of three samples treated with 500 °C post-deposition annealing, is attributed to the interfacial component of Ga2O3 and The Hf0.5Al0.5Ox dielectric is beneficial to reducing the formation of Ga2O3.

  13. Enhanced non-volatile memory characteristics with quattro-layer graphene nanoplatelets vs . 2.85-nm Si nanoparticles with asymmetric Al2O3/HfO2 tunnel oxide

    Science.gov (United States)

    El-Atab, Nazek; Turgut, Berk Berkan; Okyay, Ali K.; Nayfeh, Munir; Nayfeh, Ammar

    2015-06-01

    In this work, we demonstrate a non-volatile metal-oxide semiconductor (MOS) memory with Quattro-layer graphene nanoplatelets as charge storage layer with asymmetric Al2O3/HfO2 tunnel oxide and we compare it to the same memory structure with 2.85-nm Si nanoparticles charge trapping layer. The results show that graphene nanoplatelets with Al2O3/HfO2 tunnel oxide allow for larger memory windows at the same operating voltages, enhanced retention, and endurance characteristics. The measurements are further confirmed by plotting the energy band diagram of the structures, calculating the quantum tunneling probabilities, and analyzing the charge transport mechanism. Also, the required program time of the memory with ultra-thin asymmetric Al2O3/HfO2 tunnel oxide with graphene nanoplatelets storage layer is calculated under Fowler-Nordheim tunneling regime and found to be 4.1 ns making it the fastest fully programmed MOS memory due to the observed pure electrons storage in the graphene nanoplatelets. With Si nanoparticles, however, the program time is larger due to the mixed charge storage. The results confirm that band-engineering of both tunnel oxide and charge trapping layer is required to enhance the current non-volatile memory characteristics.

  14. On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film

    Directory of Open Access Journals (Sweden)

    Masaharu Kobayashi

    2016-02-01

    Full Text Available Internet-of-Things (IoT technologies require a new energy-efficient transistor which operates at ultralow voltage and ultralow power for sensor node devices employing energy-harvesting techniques as power supply. In this paper, a practical device design guideline for low voltage operation of steep-slope negative-capacitance field-effect-transistors (NCFETs operating at sub-0.2V supply voltage is investigated regarding operation speed, material requirement and energy efficiency in the case of ferroelectric HfO2 gate insulator, which is the material fully compatible to Complementary Metal-Oxide-Semiconductor (CMOS process technologies. A physics-based numerical simulator was built to design NCFETs with the use of experimental HfO2 material parameters by modeling the ferroelectric gate insulator and FET channel simultaneously. The simulator revealed that NCFETs with ferroelectric HfO2 gate insulator enable hysteresis-free operation by setting appropriate operation point with a few nm thick gate insulator. It also revealed that, if the finite response time of spontaneous polarization of the ferroelectric gate insulator is 10-100psec, 1-10MHz operation speed can be achieved with negligible hysteresis. Finally, by optimizing material parameters and tuning negative capacitance, 2.5 times higher energy efficiency can be achieved by NCFET than by conventional MOSFETs. Thus, NCFET is expected to be a new CMOS technology platform for ultralow power IoT.

  15. On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film

    Science.gov (United States)

    Kobayashi, Masaharu; Hiramoto, Toshiro

    2016-02-01

    Internet-of-Things (IoT) technologies require a new energy-efficient transistor which operates at ultralow voltage and ultralow power for sensor node devices employing energy-harvesting techniques as power supply. In this paper, a practical device design guideline for low voltage operation of steep-slope negative-capacitance field-effect-transistors (NCFETs) operating at sub-0.2V supply voltage is investigated regarding operation speed, material requirement and energy efficiency in the case of ferroelectric HfO2 gate insulator, which is the material fully compatible to Complementary Metal-Oxide-Semiconductor (CMOS) process technologies. A physics-based numerical simulator was built to design NCFETs with the use of experimental HfO2 material parameters by modeling the ferroelectric gate insulator and FET channel simultaneously. The simulator revealed that NCFETs with ferroelectric HfO2 gate insulator enable hysteresis-free operation by setting appropriate operation point with a few nm thick gate insulator. It also revealed that, if the finite response time of spontaneous polarization of the ferroelectric gate insulator is 10-100psec, 1-10MHz operation speed can be achieved with negligible hysteresis. Finally, by optimizing material parameters and tuning negative capacitance, 2.5 times higher energy efficiency can be achieved by NCFET than by conventional MOSFETs. Thus, NCFET is expected to be a new CMOS technology platform for ultralow power IoT.

  16. Memory window widening of Pt/SrBi2Ta2O9/HfO2/Si ferroelectric-gate field-effect transistors by nitriding Si

    Science.gov (United States)

    Horiuchi, Takeshi; Takahashi, Mitsue; Ohhashi, Kentaro; Sakai, Shigeki

    2009-10-01

    The optimum temperature of rapid thermal nitridation (RTN) of Si substrates was investigated for minimizing an equivalent oxide thickness (EOT) of an interfacial layer (IL) which was grown between HfO2 and Si of Pt/SrBi2Ta2O9(SBT)/HfO2/Si ferroelectric-gate field-effect transistors (FeFETs) during a post-annealing process. The RTN was performed in NH3 gas at various temperatures ranging from 800 °C to 1190 °C. As the RTN temperature was raised from 800 °C to 1080 °C, memory windows of drain current-gate voltage curves became wider. Large memory windows were obtained at the range from 1020 °C to 1130 °C. The maximum was 1.36 V obtained at 1080 °C. It was 10% larger than the typical values of Pt/SBT/HfO2/Si FeFETs without the RTN. At higher RTN temperatures than 1080 °C, the memory windows tended to decrease. At 800 °C and 1190 °C, all layer boundaries among SBT-HfO2-IL-Si seemed unclear in scanning transmission electron microscopic views probably due to material diffusions. The optimum RTN temperature for minimizing the EOT of the IL and maximizing the memory window of the Pt/SBT/HfO2/SiNx/Si FeFET was 1080 °C. The FeFET using the Si processed by the RTN at 1080 °C also showed good retentions without significant degradations over two days.

  17. Ab initio study of the elastic properties of single and polycrystal TiO(2), ZrO(2) and HfO(2) in the cotunnite structure.

    Science.gov (United States)

    Caravaca, M A; Miño, J C; Pérez, V J; Casali, R A; Ponce, C A

    2009-01-07

    In this work, we study theoretically the elastic properties of the orthorhombic (Pnma) high-pressure phase of IV-B group oxides: titania, zirconia and hafnia. By means of the self-consistent SIESTA code, pseudopotentials, density functional theory in the LDA and GGA approximations, the total energies, hydrostatic pressures and stress tensor components are calculated. From the stress-strain relationships, in the linear regime, the elastic constants C(ij) are determined. Derived elastic constants, such as bulk, Young's and shear modulus, Poisson coefficient and brittle/ductile behavior are estimated with the polycrystalline approach, using Voigt-Reuss-Hill theories. We have found that C(11), C(22) and C(33) elastic constants of hafnia and zirconia show increased strength with respect to the experimental values of the normal phase, P 2(1)/c. A similar situation applies to titania if these constants are compared with its normal phase, rutile. However, shear elastic constants C(44), C(55) and C(66) are similar to the values found in the normal phase. This fact increases the compound anisotropy as well as its ductile behavior. The dependence of unit-cell volumes under hydrostatic pressures is also analyzed. P-V data, fitted to third-order Birch-Murnaghan equations of state, provide the bulk modulus B(0) and its pressure derivatives B'(0). In this case, LDA estimations show good agreement with respect to recent measured bulk moduli of ZrO(2) and HfO(2). Thermo-acoustic properties, e.g. the propagation speed of transverse, longitudinal elastic waves together with associated Debye temperatures, are also estimated.

  18. Data Retention and Readout Degradation Properties of Pt/Sr0.7Sm0.07Bi2.2Ta2O9/HfO2/Si Structure Ferroelectric-Gate Field Effect Transistors

    Science.gov (United States)

    Saiki, Hirokazu; Tokumitsu, Eisuke

    2007-01-01

    We discuss the data retention and readout degradation properties of ferroelectric-gate field-effect transistors (FeFETs) with Pt/Sr0.7Sm0.07Bi2.2Ta2O9/HfO2/Si structures. We first point out that to read out the stored data correctly, unselected FeFETs should be turned off during the readout process and that this process causes a significant reduction of ON readout current. We next characterize the data retention properties of Pt/Sr0.7Sm0.07Bi2.2Ta2O9/HfO2/Si structure n-channel FeFET by taking the readout process into account. It is shown that the retention property measured by applying positive readout pulses after holding at VG=0 V for 30 s, is similar to that measured by the conventional method in which drain current is continuously measured at a positive hold voltage.

  19. Synthesis of ZrO2-HfO2-Y2O3-Sc2O3 Nano-Particles by Sol-Gel Technique in Aqueous Solution of Alcohol

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Agglomeration-free nanosized ZrO2-HfO2-Y2O3-Sc2O3 composite powders were successfully synthesized by Sol-Gel technique in heated aqueous solution of alcohol, using analytically pure ZrOCl2·8H2O, HfOCl2·8H2O, Y(NO3)3·6H2O, and Sc2O3 as raw materials. The effect of synthesis condition on the size and dispersity of the composite powders was investigated by means of XRD, TEM, and TG-DSC techniques. The results showed that well-dispersed predecessor of ZrO2-HfO2-Y2O3-Sc2O3 composite nanopowders could be obtained. The optional condition: PEG6000 as dispersant was 1%, alcohol/H2O ratio was 5/1, metallic ion concentration in whole solution was 0.5 mol·L-1 and the pH value of the solution was 12. After calcined at 620 ℃, the powder obtained was in uniform cubic structure, and its average particle size was about 13 nm, which was good for producing nanocrystalline solid electrolyte.

  20. A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors

    Science.gov (United States)

    Krylov, Igor; Pokroy, Boaz; Eizenberg, Moshe; Ritter, Dan

    2016-09-01

    We compare the electrical properties of HfO2/Al2O3 nano-laminates with those of the ternary HfxAlyO compound in metal oxide semiconductor (MOS) capacitors. The dielectrics were deposited by atomic layer deposition on InGaAs. Water, ozone, and oxygen plasma were tested as oxygen precursors, and best results were obtained using water. The total dielectric thickness was kept constant in our experiments. It was found that the effective dielectric constant increased and the leakage current decreased with the number of periods. Best results were obtained for the ternary compound. The effect of the sublayer thicknesses on the electrical properties of the interface was carefully investigated, as well as the role of post-metallization annealing. Possible explanations for the observed trends are provided. We conclude that the ternary HfxAlyO compound is more favorable than the nano-laminates approach for InGaAs based MOS transistor applications.

  1. First Principles Calculation of Elastic Constants of Monoclinic HfO2 Thin Film%单斜相HfO2薄膜弹性常数的第一性原理计算

    Institute of Scientific and Technical Information of China (English)

    蔺玲; 邵淑英; 李静平

    2013-01-01

    用电子束蒸发沉积在K9玻璃基底上镀制HfO2薄膜,沉积温度为200℃,蒸发速率为0.03 nm/s.由X射线衍射谱可知薄膜出现明显结晶,且为单斜相和正交相混合结构,其中单斜相占明显优势.用Jade5软件分析得到单斜相HfO2的晶格常数a,b,c以及晶格矢量a和c之间的夹角β.基于得到的晶格常数建立了单斜相HfO2薄膜的晶体结构模型.同时建立固态单斜相HfO2的晶体结构模型进行对比.通过密度泛函理论(DFT)框架下的平面超软赝势法,采用两种不同的交换关联函数:局域密度近似(LDA)中的CA-PZ和广义梯度近似(GGA)中的质子平衡方程(PBE),计算了薄膜态和固态单斜晶相HfO2的弹性刚度系数矩阵Gij和弹性柔度系数矩阵Sij,Reuss模型、Voigt模型和Hill理论下的体积模量和剪切模量,材料平均杨氏模量和泊松比.此外还计算得到薄膜态和固态单斜晶相HfO2在不同方向上的杨氏模量.%HfO2 films are deposited by electron beam evaporation at a deposition rate of 0.03 nm/s and deposition temperature of 200 ℃ on K9 glass substrates. The films are observed to show a mixed structure of monoclinic and orthorhombic phase through X-ray diffraction and monoclinic phase is of obvious advantages. The structure parameters a, b, c and angel β of monoclinic HfO2 films are obtained using Jade5 software, based on which the crystal structure model is built. While solid crystal monoclinic HfO2 model is built to compare with the thin film one. Elastic stiffness constants of monoclinic HfO2 thin film and solid crystal are investigated using the plane waves ultrasoft pseudopotential technique based on the density functional theory (DFT) under two different exchange correlation functions of local density approximation (LDA) CA-PZ and generalized gradient approximation (GGA) PBE. Reuss, Voigt and Hill theories are used to estimate the bulk, shear and average Young's moduli and Possion ratio for polycrystalline HfO2 thin film and solid crystal. In addition, the Young's moduli in different orientations are also calculated.

  2. CeO2掺杂对HfO2栅介质电学特性的影响%Influence of CeO2-Doping on Electrical Properties of HfO2 Gate Dielectrics

    Institute of Scientific and Technical Information of China (English)

    杨萌萌; 屠海令; 张心强; 熊玉华; 王小娜; 杜军

    2012-01-01

    采用磁控共溅射的方法在p-Si(100)衬底上沉积了掺杂和不掺杂CeO2的HfO2薄膜.通过X射线光电子能谱(XPS)研究了薄膜中元素的化学计量比及结合能,制备MOS结构并对漏电流及电容等电学性能进行表征.结果表明,掺入CeO2后,整个体系的氧空位生成能增大,氧空位数目减少,漏电流较纯HfO2下降了一个数量级,满足作为高k材料的要求.%CeO2-doped HfO2(CDH) thin films were deposited on p-Si substrates by RF magnetron co-sputtering. The film thickness was measured by surface profiler. The binding energy of elements was characterized by X-ray photoelectron spectroscopy ( XPS). MOS structures were made to characterize the leakage current and capacitance. XPS analysis of Hf 4f and 01s confirmed that the Hf-0 binding energy increased after doping CeO2. This resulted in the increase of the oxygen vacancy formation energy and the reduction of the concentration of oxygen vacancy. The leakage current density of CDH film was about one order of magnitude lower than that of HfO2 film. CDH film can meet the requirements of high-fc application.

  3. Matrix Metalloproteinase 2 (MMP-2) Plays a Critical Role in the Softening of Common Carp Muscle during Chilled Storage by Degradation of Type I and V Collagens.

    Science.gov (United States)

    Xu, Chao; Wang, Cheng; Cai, Qiu-Feng; Zhang, Qian; Weng, Ling; Liu, Guang-Ming; Su, Wen-Jin; Cao, Min-Jie

    2015-12-30

    Matrix metalloproteinases (MMPs) are proposed to play important roles in the degradation of collagens, thus causing the post-mortem softening of fish muscle, although the specific mechanism remains largely unresolved. Previously, we reported the existence of gelatinase-like proteinases in common carp (Cyprinus carpio) muscle. The primary structures of these proteinases, however, have never been investigated. In the present study, two MMPs with molecular masses of 66 and 65 kDa were purified to homogeneity from common carp muscle by ammonium sulfate fractionation and a series of column chromatographies. Matrix-assisted laser desorption/ionization-tandem time-of-flight mass spectrometry (MALDI-TOF/TOF-MS/MS) analysis indicated that they are completely identical to MMP-2 from common carp. During chilled storage of common carp at 4 °C, the enzymatic activity of MMP-2 increased to 212% in 12 h while the texture profile increased over the first 2 h and gradually decreased. On the other hand, type V collagen was purified to homogeneity and a specific polyclonal antibody against this protein was prepared. Both type I and V collagens were effectively hydrolyzed by MMP-2 at 30 °C and even at 4 °C. Furthermore, injection of metalloproteinase proteinase inhibitor EDTA into the blood vessel of live common carp suppressed post-mortem tenderization significantly. All of these results confirmed that MMP-2 is a major proteinase responsible for the degradation of collagens, resulting in the softening of fish muscle during chilled storage.

  4. Microstructure Evolution and Durability of Advanced Environmental Barrier Coating Systems for SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming; Evans, Laura J.; McCue, Terry R.; Harder, Bryan

    2016-01-01

    Environmental barrier coated SiC-SiC ceramic matrix composites (CMCs) systems will play a crucial role in next generation turbine engines for hot-section component applications because of their ability to significantly increase engine operating temperatures with improved efficiency, reduce engine weight and cooling requirements. Advanced HfO2 and rare earth silicate environmental barrier coatings (EBCs), along with multicomponent hafnium and rare earth silicide EBC bond coats have been developed. The coating degradation mechanisms in the laboratory simulated engine thermal cycling, and fatigue-creep operating environments are also being investigated. This paper will focus on the microstructural and compositional evolutions of an advanced environmental barrier coating system on a SiC-SiC CMC substrate during the high temperature simulated durability tests, by using a Field Emission Gun Scanning Electron Microscopy, Energy Dispersive Spectroscopy (EDS) and Wavelength Dispersive Spectroscopy (WDS). The effects of Calcium-Magnesium-Alumino-Silicate (CMAS) from road sand or volcano-ash deposits on the degradation mechanisms of the environmental barrier coating systems will also be discussed. The detailed analysis results help understand the EBC-CMC system performance, aiming at the durability improvements to achieve more robust, prime-reliant environmental barrier coatings.

  5. O-vacancies in (i) nano-crystalline HfO2 and (i) non-crystalline SiO2 and Si3N4 studied by X-ray absorption spectroscopy.

    Science.gov (United States)

    Lucovsky, Gerald; Miotti, Leonardo; Bastos, Karen Paz

    2012-06-01

    Performance and reliability in semiconductor devices are limited by electronically active defects, primarily O-atom and N-atom vacancies. Synchrotron X-ray spectroscopy results, interpreted in the context of two-electron multiplet theories, have been used to analyze conduction band edge, and O-vacancy defect states in nano-crystalline transition metal oxides, e.g., HfO2, and the noncrystalline dielectrics, SiO2, Si3N4 and Si-oxynitride alloys. Two-electron multiplet theory been used to develop a high-spin state equivalent d2 model for O-vacancy allowed transitions and negative ion states as detected by X-ray absorption spectroscopy in the O K pre-edge regime. Comparisons between theory and experiment have used Tanabe-Sugano energy level diagrams for determining the symmetries and relative energies of intra-d-state transitions for an equivalent d2 ground state occupancy. Trap-assisted-tunneling, Poole-Frenkel hopping transport, and the negative bias temperature instability have been explained in terms of injection and/or trapping into O-atom and N-atom vacancy sites, and applied to gate dielectric, and metal-insulator-metal structures.

  6. Si掺杂HfO2薄膜的铁电和反铁电性质%Ferro electric and antiferro electric prop erties of Si-dop ed HfO2 thin films

    Institute of Scientific and Technical Information of China (English)

    周大雨; 徐进; Johannes Müller; Uwe Schröder

    2014-01-01

    通过改变Si掺杂量制备出了具有显著铁电和反铁电特征的HfO2纳米薄膜,对其电滞回线、电容-电压和漏电流-电压特性以及物相温度稳定性进行了对比研究。反铁电薄膜的介电系数大于铁电薄膜,在电场加载和减载过程中发生的可逆反铁电-铁电相变导致了双电滞回线的出现,在室温至185◦C的测试温度范围内未出现反铁电→顺电相变。在电流-电压特性测量时观察到的负微分电阻效应归因于极化弛豫等慢响应机理的贡献。%Ferroelectric and antiferroelectric HfO2 nano-films were prepared by changing silicon doping concentration, and their basic properties were compared in terms of polarization hysteresis, capacitance-voltage and leakage-voltage behavior, as well as the effect of temperature on phase stability. Antiferroelectric thin film exhibits a higher dielectric constant than the ferroelectric film, and is characterized by the double polarization hysteresis loops due to reversible antiferroelectric-ferroelectric phase transition induced during loading and unloading processes of electric field. No antiferroelectric-paraelectric phase transition is observed at measuring temperatures up to 185 ◦C. The negative differential resistivity effect observed in leakage measurements is attributed to the contributions from slow response mechanisms like polarization relaxation.

  7. High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2

    Science.gov (United States)

    Lin, T. D.; Chang, W. H.; Chu, R. L.; Chang, Y. C.; Chang, Y. H.; Lee, M. Y.; Hong, P. F.; Chen, Min-Cheng; Kwo, J.; Hong, M.

    2013-12-01

    Self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors (MOSFETs) have been fabricated using the gate dielectrics of in-situ directly atomic-layer-deposited (ALD) HfO2 followed by ALD-Al2O3. There were no surface pretreatments and no interfacial passivation/barrier layers prior to the ALD. TiN/Al2O3 (4 nm)/HfO2 (1 nm)/In0.53Ga0.47As/InP MOS capacitors exhibited well-behaved capacitance-voltage characteristics with true inversion behavior, low leakage current densities of ˜10-8 A/cm2 at ±1 MV/cm, and thermodynamic stability at high temperatures. Al2O3 (3 nm)/HfO2 (1 nm)/In0.53Ga0.47As MOSFETs of 1 μm gate length, with 700 °C-800 °C rapid thermal annealing in source/drain activation, have exhibited high extrinsic drain current (ID) of 1.5 mA/μm, transconductance (Gm) of 0.84 mS/μm, ION/IOFF of ˜104, low sub-threshold swing of 103 mV/decade, and field-effect electron mobility of 1100 cm2/V . s. The devices have also achieved very high intrinsic ID and Gm of 2 mA/μm and 1.2 mS/μm, respectively.

  8. "They Won't Let Us Play ... Unless You're Going out with One of Them": Girls, Boys and Butler's "Heterosexual Matrix" in the Primary Years

    Science.gov (United States)

    Renold, Emma

    2006-01-01

    Judith Butler's conceptualisation of how gender is routinely spoken through a hegemonic heterosexual matrix has been pivotal for many social scientists researching within and beyond educational settings for exposing the ways in which children's normative gender identities ("intelligible genders") are inextricably tied to dominant notions of…

  9. 不同基底上HfO2/SiO2多层膜的力学性能%Mechanical Properties of HfO2/SiO2 Thin Films on Different Substrates

    Institute of Scientific and Technical Information of China (English)

    王河; 贺洪波; 张伟丽

    2013-01-01

    The HfO2/SiO2 films are deposited on K9 glass and Y3Al5O12 (YAG) crystal substrates by electron beam technology respectively.Nano-scratch tests are taken to investigate the mechanical properties of films respectively.The results show that the modulus of the films deposited on K9 and YAG are 34.8 GPa and 38.5 GPa respectively and the substrates have few effect on the elasticity modulus of the films.The adhesive force of the film is 7 mN on K9 substrate and 5 mN on YAG,and they present different failure modes.This can be attributed to the weak adhesion and large divergence of modulus between film and YAG crystal.The chemical binding state and elasticity modulus between the film and the substrate are taken to explain the different mechanical behaviors of the films on YAG and K9 substrates.%用电子束蒸发技术在K9玻璃及YAG晶体上沉积了HfO2/SiO2多层膜,采用纳米划痕仪对薄膜的力学性能进行了研究.实验结果表明:沉积在YAG和K9的多层膜弹性模量分别为34.8 GPa和38.5 GPa,基底对薄膜的弹性模量影响较小;YAG和K9上薄膜的粘附失效临界附着力分别为5 mN和7 mN,薄膜与YAG基底的结合状态较K9基底的差,并且呈现不同破坏模式.从薄膜之间及膜基界面处的界面结合状态和弹性模量两方面分析解释了YAG基底和K9基底上薄膜的不同力学行为.

  10. H fO 2铁电相与四方相转变关系的第一性原理研究%First principle study of the transformation relationship between HfO2 ferroelectric and tetragonal phases

    Institute of Scientific and Technical Information of China (English)

    叶飞; 肖海珠; 周大雨

    2014-01-01

    The Pca21 orthogonal phase with ferroelectric property and P42/nmc tetragonal phase of HfO2 have been studied using the augmented plane wave within density functional theory in this work.It has been found out that in the case of the crystal structures,both the ferroelectric phase and the tetragonal phase can be regar-ded as fluorite-related structure,and the deformation of the unit cells during transformation from the tetragonal phase to the ferroelectric phase was less than 3.75%;in the case of the electronic structures,the hybridization of Hf 5d and O 2p,2s was enhanced by the transformation from the tetragonal phase to the ferroelectric phase, and the electron states shift to lower energy,which lead to a lower lattice energy of the ferroelectric phase. These results have confirmed that the Pca21 orthogonal phase with ferroelectric property was a stable phase, and provided further insight into the transformation relationship between the ferroelectric phase and the tetra-gonal phase.%基于密度泛函理论的缀加平面波方法计算了 HfO2的正交相 Pca21和四方相 P42/nmc,其中正交相具有铁电性质。计算结果表明,在晶体结构方面, HfO2正交相和四方相都具有类萤石结构特征,并且从四方相P42/nmc到正交相Pca21的转变过程中单胞变形<3.75%;在电子结构方面,通过四方相到正交相的结构转变,Hf的5d和O 的2p、2s的杂化效应增强,同时这些电子态向低能移动,使正交相的相对能量低于四方相。这些研究结果证实了 HfO2具有铁电性质的 Pca21正交相是一种稳定的相结构,并解释了从P42/nmc四方相到Pca21正交相的转变关系。

  11. Play Matters

    DEFF Research Database (Denmark)

    Sicart (Vila), Miguel Angel

    , but not necessarily fun. Play can be dangerous, addictive, and destructive. Along the way, Sicart considers playfulness, the capacity to use play outside the context of play; toys, the materialization of play--instruments but also play pals; playgrounds, play spaces that enable all kinds of play; beauty......, the aesthetics of play through action; political play -- from Maradona's goal against England in the 1986 World Cup to the hactivist activities of Anonymous; the political, aesthetic, and moral activity of game design; and why play and computers get along so well....

  12. A thermodynamic model for the solubility of HfO2(am) in the aqueous K +– HCO3-– CO32-–O-–H2O system

    Energy Technology Data Exchange (ETDEWEB)

    Rai, Dhanpat; Kitamura, Akira; Rosso, Kevin M.

    2017-01-01

    Solubility of HfO2(am) was determined as a function of KHCO3 concentrations ranging from 0.001 mol·kg-1 to 0.1 mol·kg-1. The solubility of HfO2(am) increased dramatically with the increase in KHCO3 concentrations, indicating that Hf(IV) makes strong complexes with carbonate. Thermodynamic equilibrium constants for the formation of Hf-carbonate complexes were determined using both the Pitzer and SIT models. The dramatic increase in Hf concentrations with the increase in KHCO3 concentrations can best be described by the formation of Hf(OH-)2(CO3)22- and Hf(CO3)56-. The log10 K0 values for the reactions [Hf4++2CO32-+2OH-⇌Hf(OH)2(CO3)22-] and [Hf4++5CO32-⇌Hf(CO3)56-], based on the SIT model, were determined to be 44.53±0.46 and 41.53±0.46, respectively, and based on the Pitzer model they were 44.56±0.48 and 40.20±0.48, respectively.

  13. Playful Gaming.

    Science.gov (United States)

    Makedon, Alexander

    A philosophical analysis of play and games is undertaken in this paper. Playful gaming, which is shown to be a synthesis of play and games, is utilized as a category for undertaking the examination of play and games. The significance of playful gaming to education is demonstrated through analyses of Plato's, Dewey's, Sartre's, and Marcuse's…

  14. Beta 1 integrin binding plays a role in the constant traction force generation in response to varying stiffness for cells grown on mature cardiac extracellular matrix.

    Science.gov (United States)

    Gershlak, Joshua R; Black, Lauren D

    2015-01-15

    We have previously reported a unique response of traction force generation for cells grown on mature cardiac ECM, where traction force was constant over a range of stiffnesses. In this study we sought to further investigate the role of the complex mixture of ECM on this response and assess the potential mechanism behind it. Using traction force microscopy, we measured cellular traction forces and stresses for mesenchymal stem cells (MSCs) grown on polyacrylamide gels at a range of stiffnesses (9, 25, or 48 kPa) containing either adult rat heart ECM, different singular ECM proteins including collagen I, fibronectin, and laminin, or ECM mimics comprised of varying amounts of collagen I, fibronectin, and laminin. We also measured the expression of integrins on these different substrates as well as probed for β1 integrin binding. There was no significant change in traction force generation for cells grown on the adult ECM, as previously reported, whereas cells grown on singular ECM protein substrates had increased traction force generation with an increase in substrate stiffness. Cells grown on ECM mimics containing collagen I, fibronectin and laminin were found to be reminiscent of the traction forces generated by cells grown on native ECM. Integrin expression generally increased with increasing stiffness except for the β1 integrin, potentially implicating it as playing a role in the response to adult cardiac ECM. We inhibited binding through the β1 integrin on cells grown on the adult ECM and found that the inhibition of β1 binding led to a return to the typical response of increasing traction force generation with increasing stiffness. Our data demonstrates that cells grown on the mature cardiac ECM are able to circumvent typical stiffness related cellular behaviors, likely through β1 integrin binding to the complex composition. Copyright © 2014 Elsevier Inc. All rights reserved.

  15. Aesthetic Play

    DEFF Research Database (Denmark)

    Bang, Jytte Susanne

    2012-01-01

    to the children’s complex life-worlds. Further, this leads to an analysis of music-play activities as play with an art-form (music), which includes aesthetic dimensions and gives the music-play activities its character of being aesthetic play. Following Lev Vygotsky’s insight that art is a way of building life...

  16. Aesthetic Play

    DEFF Research Database (Denmark)

    Bang, Jytte Susanne

    2012-01-01

    The present article explores the role of music-related artefacts and technologies in children’s lives. More specifically, it analyzes how four 10- to 11-year old girls use CDs and DVD games in their music-play activities and which developmental themes and potentials may accrue from such activities...... to the children’s complex life-worlds. Further, this leads to an analysis of music-play activities as play with an art-form (music), which includes aesthetic dimensions and gives the music-play activities its character of being aesthetic play. Following Lev Vygotsky’s insight that art is a way of building life...

  17. Playful Membership

    DEFF Research Database (Denmark)

    Åkerstrøm Andersen, Niels; Pors, Justine Grønbæk

    2014-01-01

    This article studies the implications of current attempts by organizations to adapt to a world of constant change by introducing the notion of playful organizational membership. To this end we conduct a brief semantic history of organizational play and argue that when organizations play, employees...... are expected to engage in playful exploration of alternative selves. Drawing on Niklas Luhmann's theory of time and decision-making and Gregory Bateson's theory of play, the article analyses three empirical examples of how games play with conceptions of time. We explore how games represent an organizational...... desire to reach out - not just to the future - but to futures beyond the future presently imaginable. The article concludes that playful membership is membership through which employees are expected to develop a surplus of potential identities and continuously cross boundaries between real and virtual...

  18. NASA's Advanced Environmental Barrier Coatings Development for SiC/SiC Ceramic Matrix Composites: Understanding Calcium Magnesium Alumino-Silicate (CMAS) Degradations and Resistance

    Science.gov (United States)

    Zhu, Dongming

    2014-01-01

    Environmental barrier coatings (EBCs) and SiCSiC ceramic matrix composites (CMCs) systems will play a crucial role in next generation turbine engines for hot-section component applications because of their ability to significantly increase engine operating temperatures with improved efficiency, reduce engine weight and cooling requirements. The development of prime-reliant environmental barrier coatings is essential to the viability and reliability of the envisioned CMC engine component applications, ensuring integrated EBC-CMC system durability and designs are achievable for successful applications of the game-changing component technologies and lifing methodologies.This paper will emphasize recent NASA environmental barrier coating developments for SiCSiC turbine airfoil components, utilizing advanced coating compositions, state-of-the-art processing methods, and combined mechanical and environment testing and durability evaluations. The coating-CMC degradations in the engine fatigue-creep and operating environments are particularly complex; one of the important coating development aspects is to better understand engine environmental interactions and coating life debits, and we have particularly addressed the effect of Calcium-Magnesium-Alumino-Silicate (CMAS) from road sand or volcano-ash deposits on the durability of the environmental barrier coating systems, and how the temperature capability, stability and cyclic life of the candidate rare earth oxide and silicate coating systems will be impacted in the presence of the CMAS at high temperatures and under simulated heat flux conditions. Advanced environmental barrier coating systems, including HfO2-Si with rare earth dopant based bond coat systems, will be discussed for the performance improvements to achieve better temperature capability and CMAS resistance for future engine operating conditions.

  19. Playful Literacy

    DEFF Research Database (Denmark)

    Froes, Isabel

    2017-01-01

    these practices, which compose the taxonomy of tablet play. My contribution lies in identifying and proposing a series of theoretical concepts that complement recent theories related to play and digital literacy studies. The data collected through observations informed some noteworthy aspects, including how...... with tablets’ physical and digital affordances shape children’s digital play. This thesis presents how young children’s current practices when playing with tablets inform digital experiences in Denmark and Japan. Through an interdisciplinary lens and a grounded theory approach, I have identified and mapped...... vocabulary in children’s digital play experiences. These early digital experiences set the rules for the playgrounds and assert digital tablets as twenty-first-century toys, shaping young children’s playful literacy....

  20. Pretend play.

    Science.gov (United States)

    Weisberg, Deena Skolnick

    2015-01-01

    Pretend play is a form of playful behavior that involves nonliteral action. Although on the surface this activity appears to be merely for fun, recent research has discovered that children's pretend play has connections to important cognitive and social skills, such as symbolic thinking, theory of mind, and counterfactual reasoning. The current article first defines pretend play and then reviews the arguments and evidence for these three connections. Pretend play has a nonliteral correspondence to reality, hence pretending may provide children with practice with navigating symbolic relationships, which may strengthen their language skills. Pretend play and theory of mind reasoning share a focus on others' mental states in order to correctly interpret their behavior, hence pretending and theory of mind may be mutually supportive in development. Pretend play and counterfactual reasoning both involve representing nonreal states of affairs, hence pretending may facilitate children's counterfactual abilities. These connections make pretend play an important phenomenon in cognitive science: Studying children's pretend play can provide insight into these other abilities and their developmental trajectories, and thereby into human cognitive architecture and its development.

  1. Playful Interaction

    DEFF Research Database (Denmark)

    2003-01-01

    The video Playful Interaction describes a future architectural office, and envisions ideas and concepts for playful interactions between people, materials and appliances in a pervasive and augmented working environment. The video both describes existing developments, technologies and designs...... as well as ideas not yet implemented such as playful modes of interaction with an augmented ball. Playful Interaction has been used as a hybrid of a vision video and a video prototype (1). Externally the video has been used to visualising our new ideas, and internally the video has also worked to inspire...

  2. Mediatized play

    DEFF Research Database (Denmark)

    Johansen, Stine Liv

    Children’s play must nowadays be understood as a mediatized field in society and culture. Media – understood in a very broad sense - holds severe explanatory power in describing and understanding the practice of play, since play happens both with, through and inspired by media of different sorts....... In this presentation the case of ‘playing soccer’ will be outlined through its different mediated manifestations, including soccer games and programs on TV, computer games, magazines, books, YouTube videos and soccer trading cards....

  3. Play practices and play moods

    DEFF Research Database (Denmark)

    Karoff, Helle Skovbjerg

    2013-01-01

    The aim of this article is to develop a view of play as a relation between play practices and play moods based on an empirical study of children's everyday life and by using Bateson's term of ‘framing’ [(1955/2001). In Steps to an ecology of mind (pp. 75–80). Chicago: University of Chicago Press......], Schmidt's notion of ‘commonness’ [(2005). Om respekten. København: Danmarks Pædagogiske Universitets Forlag; (2011). On respect. Copenhagen: Danish School of Education University Press] and Heidegger's term ‘mood’ [(1938/1996). Time and being. Cornwall: Wiley-Blackwell.]. Play mood is a state of being...... in which we are open and ready, both to others and their production of meaning and to new opportunities for producing meaning. This play mood is created when we engage with the world during play practices. The article points out four types of play moods – devotion, intensity, tension and euphorica – which...

  4. Playful Organizations

    DEFF Research Database (Denmark)

    Pors, Justine Grønbæk; Åkerstrøm Andersen, Niels

    2015-01-01

    and undecidability. With an empirical point of departure in Danish public school policy and two concrete examples of games utilised in school development, the article analyses how play is a way for organisations to simultaneously decide and also avoid making a decision, thus keeping flexibility and possibilities...... intact. In its final sections, the article discusses what happens to conditions of decision-making when organisations do not just see undecidability as a given condition, but as a limited resource indispensable for change and renewal. The article advances discussions of organisational play by exploring......This article explores how organisational play becomes a managerial tool to increase and benefit from undecidability. The article draws on Niklas Luhmann's concept of decision and on Gregory Bateson's theory of play to create a conceptual framework for analysing the relation between decision...

  5. Group play

    DEFF Research Database (Denmark)

    Tychsen, Anders; Hitchens, Michael; Brolund, Thea

    2008-01-01

    of group dynamics, the influence of the fictional game characters and the comparative play experience between the two formats. The results indicate that group dynamics and the relationship between the players and their digital characters, are integral to the quality of the gaming experience in multiplayer......Role-playing games (RPGs) are a well-known game form, existing in a number of formats, including tabletop, live action, and various digital forms. Despite their popularity, empirical studies of these games are relatively rare. In particular there have been few examinations of the effects...... of the various formats used by RPGs on the gaming experience. This article presents the results of an empirical study, examining how multi-player tabletop RPGs are affected as they are ported to the digital medium. Issues examined include the use of disposition assessments to predict play experience, the effect...

  6. Postphenomenological Play

    DEFF Research Database (Denmark)

    Hammar, Emil

    This paper aims to identify an understanding of digital games in virtual environments by using Don Ihde’s (1990) postphenomenological approach to how technology mediates the world to human beings in conjunction with Hans-Georg Gadamer’s (1993) notion of play . Through this tentatively proposed...... amalgamation of theories I point towards an alternative understanding of the relationship between play and game as not only dialectic, but also as socially and ethically relevant qua the design and implementation of the game as technology....

  7. First-principles study of fission product (Xe, Cs, Sr) incorporation and segregation in alkaline earth metal oxides, HfO2, and MgO-HfO2 interface

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xiang-yang [Los Alamos National Laboratory; Uberuaga, Blas P [Los Alamos National Laboratory; Sickafus, Kurt E [Los Alamos National Laboratory

    2008-01-01

    In order to close the nuclear fuel cycle, advanced concepts for separating out fission products are necessary. One approach is to use a dispersion fuel form in which a fissile core is surrounded by an inert matrix that captures and immobilizes the fission products from the core. If this inert matrix can be easily separated from the fuel, via e.g. solution chemistry, the fission products can be separated from the fissile material. We examine a surrogate dispersion fuel composition, in which hafnia (HfO{sub 2}) is a surrogate for the fissile core and alkaline earth metal oxides are used as the inert matrix. The questions of fission product incorporation in these oxides and possible segregation behavior at interfaces are considered. Density functional theory based calculations for fission product elements (Xe, Sr, and Cs) in these oxides are carried out. We find smaller incorporation energy in hafnia than in MgO for Cs and Sr, and Xe if variation of charge state is allowed. We also find that this trend is reversed or reduced for alkaline earth metal oxides with large cation sizes. Model interfacial calculations show a strong tendency of segregation from bulk MgO to MgO-HfO{sub 2} interfaces.

  8. Clay Play

    Science.gov (United States)

    Rogers, Liz; Steffan, Dana

    2009-01-01

    This article describes how to use clay as a potential material for young children to explore. As teachers, the authors find that their dialogue about the potential of clay as a learning medium raises many questions: (1) What makes clay so enticing? (2) Why are teachers noticing different play and conversation around the clay table as compared to…

  9. Group play

    DEFF Research Database (Denmark)

    Tychsen, Anders; Hitchens, Michael; Brolund, Thea

    2008-01-01

    Role-playing games (RPGs) are a well-known game form, existing in a number of formats, including tabletop, live action, and various digital forms. Despite their popularity, empirical studies of these games are relatively rare. In particular there have been few examinations of the effects of the v......Role-playing games (RPGs) are a well-known game form, existing in a number of formats, including tabletop, live action, and various digital forms. Despite their popularity, empirical studies of these games are relatively rare. In particular there have been few examinations of the effects...... of the various formats used by RPGs on the gaming experience. This article presents the results of an empirical study, examining how multi-player tabletop RPGs are affected as they are ported to the digital medium. Issues examined include the use of disposition assessments to predict play experience, the effect...... RPGs, with the first being of greater importance to digital games and the latter to the tabletop version....

  10. Playing Possum

    Directory of Open Access Journals (Sweden)

    Enrico Euli

    2016-07-01

    Full Text Available Our society is drenched in the catastrophe; where the growth of financial crisis, environmental cataclysm and militarization represents its gaudiest and mortifying phenomena. Humans struggle with depression, sense of impotence, anguish towards a future considered a threat.  A possibility to keep us alive can be represented by the enhancement of our ability in ‘playing Possum’, an exercise of desisting and renitence: to firmly say ‘no’. To say no to a world that proposes just one way of being and living free, that imposes as the only unavoidable possible destiny.

  11. Playful Technology

    DEFF Research Database (Denmark)

    Johansen, Stine Liv; Eriksson, Eva

    2013-01-01

    In this paper, the design of future services for children in Danish public libraries is discussed, in the light of new challenges and opportunities in relation to new media and technologies. The Danish government has over the last few years initiated and described a range of initiatives regarding...... in the library, the changing role of the librarians and the library space. We argue that intertwining traditional library services with new media forms and engaging play is the core challenge for future design in physical public libraries, but also that it is through new media and technology that new...

  12. Playful Technology

    DEFF Research Database (Denmark)

    Johansen, Stine Liv; Eriksson, Eva

    2013-01-01

    in the library, the changing role of the librarians and the library space. We argue that intertwining traditional library services with new media forms and engaging play is the core challenge for future design in physical public libraries, but also that it is through new media and technology that new......In this paper, the design of future services for children in Danish public libraries is discussed, in the light of new challenges and opportunities in relation to new media and technologies. The Danish government has over the last few years initiated and described a range of initiatives regarding...

  13. Playing cards.

    Science.gov (United States)

    1977-01-01

    Mrs. Zahia Marzouk, vice-president of the Alexandria Family Planning Association and a living legend of Egyptian family planning, does not believe in talking about problems. She is far too busy learning from people and teaching them. Her latest brainstorm is a set of playing cards designed to help girls and women to read and learn about family planning at the same time. The 5 packs of cards, representing familiar words and sounds, and each with a family planning joker, took Mrs. Marzouk 6 months to design and paint by hand. They have now been printed, packed into packets provided by UNICEF, and distributed to some 2000 literacy groups in factories and family planning clinics. Each woman who succeeds in learning to read is encouraged to teach 4 others. They then go to the family planning clinic to be examined and gain a certificate. For the teacher who has made them proficient there is a special prize. Girls at El Brinth village outside Alexandria are pictured playing cards at the family planning center where they are learning various skills including how to read.

  14. Synovial proinflammatory cytokines and their correlation with matrix metalloproteinase-3 expression in Behçet's disease. Does interleukin-1beta play a major role in Behçet's synovitis?

    Science.gov (United States)

    Pay, Salih; Erdem, Hakan; Pekel, Aysel; Simsek, Ismail; Musabak, Ugur; Sengul, Ali; Dinc, Ayhan

    2006-05-01

    The objective of this study has been the well established fact that proinflammatory cytokines and metalloproteinases play a crucial role in the pathogenesis of chronic arthritis as well as the development of pannus, with the eventual erosive changes. Among the proinflammatory cytokines, interleukin-18 (IL-18) has been shown to contribute to the pathogenesis of chronic synovitis by increasing the secretion of interleukin-1beta (IL-1beta) and the tumor necrosis factor-alpha (TNF-alpha) and also stimulating angiogenesis. The aim of this study is to investigate the synovial IL-18, IL-1beta, TNF-alpha and matrix metalloproteinase-3 (MMP-3) levels in patients with Behçet's disease (BD), and compare them with the levels of patients with rheumatoid arthritis (RA) and osteoarthritis (OA). 30 patients with BD, 20 with RA, and 20 with OA were included in the study. The synovial levels of IL-18, IL-1beta, TNF-alpha and MMP-3 were detected using the two-step sandwich ELISA method. The synovial IL-18, TNF-alpha and MMP-3 levels were significantly higher in RA patients than patients with BD (P=0.004, 0.019, 0.025, respectively) and with OA (P=0.004, 0.045, 0.032, respectively). There were no differences, with respect to the cytokine levels, when patients with BD were compared with those with OA. Patients with RA and BD had higher IL-1beta levels than patients with OA (P=0.017, 0.013, respectively). However, no such difference was found for IL-1beta between BD and RA patients. Among patients with RA, positive correlations were found between TNF-alpha and MMP-3 (r=0.683, P=0.001). Our results showed that MMP-3 and proinflammatory cytokines, except IL-1beta, were expressed in relatively small quantities in Behçet's synovitis. Detection of the lower levels of these cytokines and metalloproteinases might explain the non-erosive character of Behçet's arthritis. We suggest that IL-1beta may be involved in the pathogenesis of Behçet's synovitis.

  15. Methodology for Producing a Uniform Distribution of UO2 in a Tungsten Matrix

    Science.gov (United States)

    Tucker, Dennis S.; O'Conner, Andrew; Hickman, Rickman; Broadway, Jeramie; Belancik, Grace

    2015-01-01

    Current work at NASA's Marshall Space Flight Center (MSFC) is focused on the development CERMET fuel materials for Nuclear Thermal Propulsion (NTP). The CERMETs consist of uranium dioxide (UO2) fuel particles embedded in a tungsten (W) metal matrix. Initial testing of W-UO2 samples fabricated from fine angular powders performed reasonably well, but suffered from significant fuel loss during repeated thermal cycling due to agglomeration of the UO2 (1). The blended powder mixtures resulted in a non-uniform dispersion of the UO2 particles in the tungsten matrix, which allows rapid vaporization of the interconnected UO2 from the sample edges into the bulk material. Also, the angular powders create areas of stress concentrations due to thermal expansion mismatch, which eventually cracks the tungsten matrix. Evenly coating spherical UO2 particles with chemical vapor deposited (CVD) tungsten prior to consolidation was previously demonstrated to provide improved performance. However, the CVD processing technology is expensive and not currently available. In order to reduce cost and enhance performance, a powder coating process has been developed at MSFC to produce a uniform distribution of the spherical UO2 particles in a tungsten matrix. The method involves utilization of a polyethylene binder during mixing which leads to fine tungsten powders clinging to the larger UO2 spherical particles. This process was developed using HfO2 as a surrogate for UO2. Enough powder was mixed to make 8 discs (2cm diameter x 8mm thickness) using spark plasma sintering. A uniaxial pressure of 50 MPa was used at four different temperatures (2 samples at each temperature). The first two samples were heated to 1400C and 1500C respectively for 5 minutes. Densities for these samples were less than 85% of theoretical, so the time at temperature was increased to 20 minutes for the remaining samples. The highest densities were achieved for the two samples sintered at 1700C (approx. 92% of

  16. Improved Performance of Dye-Sensitized Solar Cells Fabricated from a Coumarin NKX-2700 Dye-Sensitized TiO2/MgO Core-Shell Photoanode with an HfO2 Blocking Layer and a Quasi-Solid-State Electrolyte

    Science.gov (United States)

    Maheswari, D.; Venkatachalam, P.

    2015-03-01

    Dye sensitized solar cells (DSSC) were fabricated from a coumarin NKX-2700 dye-sensitized core-shell photoanode and a quasi-solid-state electrolyte, sandwiched together, with a cobalt sulfide-coated counter electrode. The core-shell photoanode consisted of a composite mixture of 90% TiO2 nanoparticles and 10% TiO2 nanowires (TNPW) as core layer and MgO nanoparticles (MNP) as shell layer. Hafnium oxide (HfO2) was applied to the core-shell photoanode film as a blocking layer. TiO2 nanoparticles, TiO2 nanowires, and TNPW/MNP were characterized by x-ray diffractometry, scanning electron microscopy, and transmission electron microscopy. It was apparent from the UV-visible spectrum of the sensitizing dye coumarin NKX-2700 that its absorption was maximum at 525 nm. Power conversion efficiency (PCE) was greater for DSSC-1, fabricated with a core-shell TNPW/MNP/HfO2 photoanode, than for the other DSSC; its photovoltaic properties were: short circuit photocurrent J sc = 19 mA/cm2, open circuit voltage ( V oc) = 720 mV, fill factor ( FF) = 66%, and PCE ( η) = 9.02%. The charge-transport and charge-recombination behavior of the DSSC were investigated by electrochemical impedance spectroscopy; the results showed that the composite core-shell film resulted in the lowest charge-transfer resistance ( R CE) and the longest electron lifetime ( τ eff). Hence, the improved performance of DSSC-1 could be ascribed to the core-shell photoanode with blocking layer, which increased electron transport and suppressed recombination of charge carriers at the photoanode/dye/electrolyte interface.

  17. Matrix theory

    CERN Document Server

    Franklin, Joel N

    2003-01-01

    Mathematically rigorous introduction covers vector and matrix norms, the condition-number of a matrix, positive and irreducible matrices, much more. Only elementary algebra and calculus required. Includes problem-solving exercises. 1968 edition.

  18. New generation nuclear fuel structures: dense particles in selectively soluble matrix

    Energy Technology Data Exchange (ETDEWEB)

    Sickafus, Kurt E [Los Alamos National Laboratory; Devlin, David J [Los Alamos National Laboratory; Jarvinen, Gordon D [Los Alamos National Laboratory; Patterson, Brian M [Los Alamos National Laboratory; Pattillo, Steve G [Los Alamos National Laboratory; Valdez, James [Los Alamos National Laboratory; Phillips, Jonathan [Los Alamos National Laboratory

    2009-01-01

    We have developed a technology for dispersing sub-millimeter sized fuel particles within a bulk matrix that can be selectively dissolved. This may enable the generation of advanced nuclear fuels with easy separation of actinides and fission products. The large kinetic energy of the fission products results in most of them escaping from the sub-millimeter sized fuel particles and depositing in the matrix during burning of the fuel in the reactor. After the fuel is used and allowed to cool for a period of time, the matrix can be dissolved and the fission products removed for disposal while the fuel particles are collected by filtration for recycle. The success of such an approach would meet a major goal of the GNEP program to provide advanced recycle technology for nuclear energy production. The benefits of such an approach include (1) greatly reduced cost of the actinide/fission product separation process, (2) ease of recycle of the fuel particles, and (3) a radiation barrier to prevent theft or diversion of the recycled fuel particles during the time they are re-fabricated into new fuel. In this study we describe a method to make surrogate nuclear fuels of micrometer scale W (shell)/Mo (core) or HfO2 particles embedded in an MgO matrix that allows easy separation of the fission products and their embedded particles. In brief, the method consists of physically mixing W-Mo or hafnia particles with an MgO precursor. Heating the mixture, in air or argon, without agitation, to a temperature is required for complete decomposition of the precursor. The resulting material was examined using chemical analysis, scanning electron microscopy, X-ray diffraction and micro X-ray computed tomography and found to consist of evenly dispersed particles in an MgO + matrix. We believe this methodology can be extended to actinides and other matrix materials.

  19. Matrix Factorization and Matrix Concentration

    OpenAIRE

    Mackey, Lester

    2012-01-01

    Motivated by the constrained factorization problems of sparse principal components analysis (PCA) for gene expression modeling, low-rank matrix completion for recommender systems, and robust matrix factorization for video surveillance, this dissertation explores the modeling, methodology, and theory of matrix factorization.We begin by exposing the theoretical and empirical shortcomings of standard deflation techniques for sparse PCA and developing alternative methodology more suitable for def...

  20. Matrix calculus

    CERN Document Server

    Bodewig, E

    1959-01-01

    Matrix Calculus, Second Revised and Enlarged Edition focuses on systematic calculation with the building blocks of a matrix and rows and columns, shunning the use of individual elements. The publication first offers information on vectors, matrices, further applications, measures of the magnitude of a matrix, and forms. The text then examines eigenvalues and exact solutions, including the characteristic equation, eigenrows, extremum properties of the eigenvalues, bounds for the eigenvalues, elementary divisors, and bounds for the determinant. The text ponders on approximate solutions, as well

  1. Matrix Thermalization

    CERN Document Server

    Craps, Ben; Nguyen, Kévin

    2016-01-01

    Matrix quantum mechanics offers an attractive environment for discussing gravitational holography, in which both sides of the holographic duality are well-defined. Similarly to higher-dimensional implementations of holography, collapsing shell solutions in the gravitational bulk correspond in this setting to thermalization processes in the dual quantum mechanical theory. We construct an explicit, fully nonlinear supergravity solution describing a generic collapsing dilaton shell, specify the holographic renormalization prescriptions necessary for computing the relevant boundary observables, and apply them to evaluating thermalizing two-point correlation functions in the dual matrix theory.

  2. Children's Empowerment in Play

    Science.gov (United States)

    Canning, Natalie

    2007-01-01

    This article examines the level of empowerment and autonomy children can create in their play experiences. It examines the play discourses that children build and maintain and considers the importance of play contexts in supporting children's emotional and social development. These aspects of play are often unseen or misunderstood by the adult…

  3. The Play of Psychotherapy

    Science.gov (United States)

    Marks-Tarlow, Terry

    2012-01-01

    The author reviews the role of play within psychotherapy. She does not discuss the formal play therapy especially popular for young children, nor play from the Jungian perspective that encourages the use of the sand tray with adults. Instead, she focuses on the informal use of play during psychotherapy as it is orchestrated intuitively. Because…

  4. Two people playing together: some thoughts on play, playing, and playfulness in psychoanalytic work.

    Science.gov (United States)

    Vliegen, Nicole

    2009-01-01

    Children's play and the playfulness of adolescents and adults are important indicators of personal growth and development. When a child is not able to play, or an adolescent/adult is not able to be playful with thoughts and ideas, psychotherapy can help to find a more playful and creative stance. Elaborating Winnicott's (1968, p. 591) statement that "psychotherapy has to do with two people playing together," three perspectives on play in psychotherapy are discussed. In the first point of view, the child gets in touch with and can work through aspects of his or her inner world, while playing in the presence of the therapist. The power of play is then rooted in the playful communication with the self In a second perspective, in play the child is communicating aspects of his or her inner world to the therapist as a significant other. In a third view, in "playing together" child and therapist are coconstructing new meanings. These three perspectives on play are valid at different moments of a therapy process or for different children, depending on the complex vicissitudes of the child's constitution, life experiences, development, and psychic structure. Concerning these three perspectives, a parallel can be drawn between the therapist's attitude toward the child's play and the way the therapist responds to the verbal play of an adolescent or adult. We illustrate this with the case of Jacob, a late adolescent hardly able to play with ideas.

  5. Applying Play to Therapy.

    Science.gov (United States)

    Ritter, Patricia S.; Fokes, Joann

    The objectives of this paper are (1) to present the relationship of play to language and cognition, (2) to describe the stages of play and discuss recent literature about the characteristics of play, and (3) to describe the use of play with the multifaceted goals of cognition, pragmatics, semantics, syntax, and morphology as an intervention…

  6. The play grid

    DEFF Research Database (Denmark)

    Fogh, Rune; Johansen, Asger

    2013-01-01

    In this paper we propose The Play Grid, a model for systemizing different play types. The approach is psychological by nature and the actual Play Grid is based, therefore, on two pairs of fundamental and widely acknowledged distinguishing characteristics of the ego, namely: extraversion vs...... at the Play Grid. Thus, the model has four quadrants, each of them describing one of four play types: the Assembler, the Director, the Explorer, and the Improviser. It is our hope that the Play Grid can be a useful design tool for making entertainment products for children....

  7. Role-Playing Mitosis.

    Science.gov (United States)

    Wyn, Mark A.; Stegink, Steven J.

    2000-01-01

    Introduces a role playing activity that actively engages students in the learning process of mitosis. Students play either chromosomes carrying information, or cells in the cell membrane. (Contains 11 references.) (Author/YDS)

  8. Play the Tuberculosis Game

    Science.gov (United States)

    ... Questionnaire Tuberculosis Play Tuberculosis Experiments & Discoveries About the game Discover and experience some of the classic methods ... last will in Paris. Play the Blood Typing Game Try to save some patients and learn about ...

  9. Play the MRI Game

    Science.gov (United States)

    ... Teachers' Questionnaire MRI Play MRI the Magnetic Miracle Game About the game In the MRI imaging technique, strong magnets and ... last will in Paris. Play the Blood Typing Game Try to save some patients and learn about ...

  10. Play the Electrocardiogram Game

    Science.gov (United States)

    ... and Work Teachers' Questionnaire Electrocardiogram Play the ECG Game About the game ECG is used for diagnosing heart conditions by ... last will in Paris. Play the Blood Typing Game Try to save some patients and learn about ...

  11. Learning Through Play

    Science.gov (United States)

    ... play, such as using play dough, LEGOs, and board games. Toys such as puzzles, pegboards, beads, and lacing ... Building sets, books, bicycles, roller skates, ice skates, board games, checkers, beginning sports • Middle Schoolers and Adolescents: Athletics, ...

  12. Children, Time, and Play

    DEFF Research Database (Denmark)

    Elkind, David; Rinaldi, Carla; Flemmert Jensen, Anne;

    Proceedings from the conference "Children, Time, and Play". Danish University of Education, January 30th 2003.......Proceedings from the conference "Children, Time, and Play". Danish University of Education, January 30th 2003....

  13. Role-Playing Mitosis.

    Science.gov (United States)

    Wyn, Mark A.; Stegink, Steven J.

    2000-01-01

    Introduces a role playing activity that actively engages students in the learning process of mitosis. Students play either chromosomes carrying information, or cells in the cell membrane. (Contains 11 references.) (Author/YDS)

  14. Play at Work

    DEFF Research Database (Denmark)

    Meier Sørensen, Bent; Spoelstra, Sverre

    2012-01-01

    for business and the other insists that work and play are largely indistinguishable in the postindustrial organization. Our field study of a design and communications company in Denmark shows that organizational play can be much more than just functional to the organization. We identify three ways in which......The interest in organizational play is growing, both in popular business discourse and organization studies. As the presumption that play is dysfunctional for organizations is increasingly discarded, the existing positions may be divided into two camps; one proposes ‘serious play’ as an engine...... workplaces engage in play: play as a (serious) continuation of work, play as a (critical) intervention into work and play as an (uninvited) usurpation of work....

  15. Matrix inequalities

    CERN Document Server

    Zhan, Xingzhi

    2002-01-01

    The main purpose of this monograph is to report on recent developments in the field of matrix inequalities, with emphasis on useful techniques and ingenious ideas. Among other results this book contains the affirmative solutions of eight conjectures. Many theorems unify or sharpen previous inequalities. The author's aim is to streamline the ideas in the literature. The book can be read by research workers, graduate students and advanced undergraduates.

  16. Playing with social identities

    DEFF Research Database (Denmark)

    Winther-Lindqvist, Ditte Alexandra

    2013-01-01

    This chapter offers support for Vygotsky’s claim that all play involves both an imagined situation as well as rules. Synthesising Schousboe’s comprehensive model of spheres of realities in playing (see Chapter 1, this volume) with Lev Vygotskys insight that all playing involve rules as well...

  17. Toddlers: Learning by Playing

    Science.gov (United States)

    ... Feeding Your 1- to 2-Year-Old Toddlers: Learning by Playing KidsHealth > For Parents > Toddlers: Learning by Playing Print A A A What's in ... child's play, but toddlers are hard at work learning important physical skills as they gain muscle control, ...

  18. Playing against the Game

    Science.gov (United States)

    Remmele, Bernd

    2017-01-01

    The paper first outlines a differentiation of play/game-motivations that include "negative" attitudes against the play/game itself like cheating or spoilsporting. This problem is of particular importance in concern of learning games because they are not "played" for themselves--at least in the first place--but due to an…

  19. Play the Mosquito Game

    Science.gov (United States)

    ... and Work Teachers' Questionnaire Malaria Play the Mosquito Game Play the Parasite Game About the games Malaria is one of the world's most common ... last will in Paris. Play the Blood Typing Game Try to save some patients and learn about ...

  20. (Steering) interactive play behavior

    NARCIS (Netherlands)

    Delden, van Robertus Wilhelmus

    2017-01-01

    Play is a powerful means to have an impact on the cognitive, social-emotional, and/or motor skills development. The introduction of technology brings new possibilities to provide engaging and entertaining whole-body play activities. Technology mediates the play activities and in this way changes how

  1. (Steering) interactive play behavior

    NARCIS (Netherlands)

    van Delden, Robertus Wilhelmus

    2017-01-01

    Play is a powerful means to have an impact on the cognitive, social-emotional, and/or motor skills development. The introduction of technology brings new possibilities to provide engaging and entertaining whole-body play activities. Technology mediates the play activities and in this way changes how

  2. Playing with social identities

    DEFF Research Database (Denmark)

    Winther-Lindqvist, Ditte Alexandra

    2013-01-01

    This chapter offers support for Vygotsky’s claim that all play involves both an imagined situation as well as rules. Synthesising Schousboe’s comprehensive model of spheres of realities in playing (see Chapter 1, this volume) with Lev Vygotskys insight that all playing involve rules as well...... as pretence, children’s play is understood as an activity involving rules of the social order (roles and positions) as well as identification processes (imagined situations). The theoretical argumentation builds on empirical examples obtained in two different Danish day-care centres. The chapter is informed...... by ethnographic observations and draws on illustrative examples with symbolic group play as well as game-play with rules (soccer) among 5 year old boys. Findings suggest that day-care children’s play, involves negotiation of roles, positioning and identification, and rules – and that these negotiations...

  3. Late Modern Play Culture

    DEFF Research Database (Denmark)

    Skovbjerg-Karoff, Helle

    2008-01-01

    Children's play and culture have changed over the recent years, and it is possible to understand the changes as a result of a more general change in society. We witness a large degree of changes connected to demographical aspects of children's lives. First of all it is a fact that large groups....... They are changing play arenas in order to find the identity, which suits them. In order to play children must know and be conscious of the cultural heritage, which contains knowledge of the way to organize in the playing session, the aesthetics, the techniques of playing, and this is something that is handed down...... from one generation to the next. Because older children are no longer present as younger children grow up, the traditional "cultural leaders" are gone. They have taken with them much of the inspiration for play as well as important knowledge about how to organise a game. In that sense we can say...

  4. Play, dreams, and creativity.

    Science.gov (United States)

    Oremland, J D

    1998-01-01

    Viewed ontogenetically, creating, dreaming, and playing are a variant of object relatedness. It is suggested that in recapitulating the ontogenetic sequence, creating, dreaming, and playing each as a process initiates by de-differentiation to primal union, evolves into transitional functioning, and consummates in tertiary cognitive discourse. The products of the triad--the created object, the dream, and play--are viewed as synergistic psychodynamic composites of topical, personal, and arche-typical imperatives. Creating, dreaming, and playing are easily overburdened by events, becoming stereotypical and repetitious. Nowhere is this more clearly seen than in the play of chronically ill, hospitalized children. It is suggested that with development generally, playing is replaced by formalized games; only dreaming continues as the vestige of early creative abilities.

  5. Matrix analysis

    CERN Document Server

    Bhatia, Rajendra

    1997-01-01

    A good part of matrix theory is functional analytic in spirit. This statement can be turned around. There are many problems in operator theory, where most of the complexities and subtleties are present in the finite-dimensional case. My purpose in writing this book is to present a systematic treatment of methods that are useful in the study of such problems. This book is intended for use as a text for upper division and gradu­ ate courses. Courses based on parts of the material have been given by me at the Indian Statistical Institute and at the University of Toronto (in collaboration with Chandler Davis). The book should also be useful as a reference for research workers in linear algebra, operator theory, mathe­ matical physics and numerical analysis. A possible subtitle of this book could be Matrix Inequalities. A reader who works through the book should expect to become proficient in the art of deriving such inequalities. Other authors have compared this art to that of cutting diamonds. One first has to...

  6. Play and virtuality

    Directory of Open Access Journals (Sweden)

    Svein Sando

    2010-07-01

    Full Text Available The similarities between virtuality and play are obvious, beginning with, for instance, the ubiquitous character of both. This paper deals with how insights from research on play can be used to enlighten our understanding of the ethical dimensions of activities in cyberspace, and vice versa. In particular, a central claim that play is beyond vice and virtue is debated and contested.http://dx.doi.org/10.5324/eip.v4i2.1762

  7. Why do Dolphins Play?

    Directory of Open Access Journals (Sweden)

    Stan A. Kuczaj

    2014-05-01

    Full Text Available Play is an important aspect of dolphin life, perhaps even an essential one. Play provides opportunities for dolphin calves to practice and perfect locomotor skills, including those involved in foraging and mating strategies and behaviors. Play also allows dolphin calves to learn important social skills and acquire information about the characteristics and predispositions of members of their social group, particularly their peers. In addition to helping dolphin calves learn how to behave, play also provides valuable opportunities for them to learn how to think. The ability to create and control play contexts enables dolphins to create novel experiences for themselves and their playmates under relatively safe conditions. The behavioral variability and individual creativity that characterize dolphin play yield ample opportunities for individual cognitive development as well as social learning, and sometimes result in innovations that are reproduced by other members of the group. Although adults sometimes produce innovative play, calves are the primary source of such innovations. Calves are also more likely to imitate novel play behaviors than are adults, and so calves contribute significantly to both the creation and transmission of novel play behaviors within a group. Not unexpectedly, then, the complexity of dolphin play increases with the involvement of peers. As a result, the opportunity to observe and/or interact with other dolphin calves enhances the effects of play on the acquisition and maintenance of flexible problem solving skills, the emergence and strengthening of social and communicative competencies, and the establishment of social relationships. It seems that play may have evolved to help young dolphins learn to adapt to novel situations in both their physical and social worlds, the beneficial result being a set of abilities that increases the likelihood that an individual survives and reproduces.

  8. PlayBook三人行

    Institute of Scientific and Technical Information of China (English)

    黑莓时光

    2011-01-01

    PlayBook,来自非苹果的另外一个水果——黑莓,它不是iPad,却也是平板。PBer,这个并不完美的平板——PlayBook的用户,他们开朗、认真、执着。热爱PlayBook的三人,拥有各自的人生轨迹,却挂着同样的嘴角上扬。

  9. Play your part

    CERN Document Server

    Ramsey, Gaynor

    1978-01-01

    Play your part is a collection of then situations in which students have to take on the roles of particular people and express their opinions, feelings or arguments about the situation. Play your part is intended for use with advanced students of English.

  10. Role Playing and Skits

    Science.gov (United States)

    Letwin, Robert, Ed.

    1975-01-01

    Explores non-scripted role playing, dialogue role playing, sociodrama, and skits as variations of simulation techniques. Provides step-by-step guidelines for conducting such sessions. Successful Meetings, Bill Communications, Inc., 1422 Chestnut Street, Philadelphia, Pa. 19102. Subscription Rates: yearly (US, Canada, Mexico) $14.00; elsewhere,…

  11. The Play's the Thing

    Science.gov (United States)

    Bateman, Barbara

    2005-01-01

    The modern special education theater in the United States has hosted many plays, none with a larger or more diverse cast than the learning disabilities (LD) play. During the prologue, the children with LD were waiting in the wings, not yet identified as LD but there, nonetheless. With the advent of compulsory education in this country, awareness…

  12. Playfulness and Openness

    DEFF Research Database (Denmark)

    Marchetti, Emanuela; Petersson, Eva

    2011-01-01

    What does it mean to design a playful learning tool? What is needed for a learning tool to be perceived by potential users as playful? These questions emerged reflecting on a Participatory Design process aimed at enhancing museum-learning practice from the perspective of primary school children. ...

  13. Play as Experience

    Science.gov (United States)

    Henricks, Thomas S.

    2015-01-01

    The author investigates what he believes one of the more important aspects of play--the experience it generates in its participants. He considers the quality of this experience in relation to five ways of viewing play--as action, interaction, activity, disposition, and within a context. He treats broadly the different forms of affect, including…

  14. Art of Play

    DEFF Research Database (Denmark)

    Froes, Isabel Cristina G.; Walker, Kevin

    2011-01-01

    Play is a key element in cultural development, according to the Dutch historian Johan Huizinga. Nowadays many of us interact with other people in online games and social networks, through multiple digital devices. But harnessing playful activities for museum learning is mostly undeveloped. In thi...

  15. Family Play Therapy.

    Science.gov (United States)

    Ariel, Shlomo

    This paper examines a case study of family play therapy in Israel. The unique contributions of play therapy are evaluated including the therapy's accessibility to young children, its richness and flexibility, its exposure of covert patterns, its wealth of therapeutic means, and its therapeutic economy. The systematization of the therapy attempts…

  16. Return to Play

    Science.gov (United States)

    Mangan, Marianne

    2013-01-01

    Call it physical activity, call it games, or call it play. Whatever its name, it's a place we all need to return to. In the physical education, recreation, and dance professions, we need to redesign programs to address the need for and want of play that is inherent in all of us.

  17. Playful Collaboration (Or Not)

    DEFF Research Database (Denmark)

    Bogers, Marcel; Sproedt, Henrik

    2012-01-01

    This article explores how playing games can be used to teach intangible social interaction across boundaries, in particular within open collaborative innovation. We present an exploratory case study of how students learned from playing a board game in a graduate course of the international...... imply several opportunities and challenges within education and beyond....

  18. Art of Play

    DEFF Research Database (Denmark)

    Froes, Isabel Cristina G.; Walker, Kevin

    2011-01-01

    Play is a key element in cultural development, according to the Dutch historian Johan Huizinga. Nowadays many of us interact with other people in online games and social networks, through multiple digital devices. But harnessing playful activities for museum learning is mostly undeveloped. In thi...

  19. Play framework cookbook

    CERN Document Server

    Reelsen, Alexander

    2015-01-01

    This book is aimed at advanced developers who are looking to harness the power of Play 2.x. This book will also be useful for professionals looking to dive deeper into web development. Play 2 .x is an excellent framework to accelerate your learning of advanced topics.

  20. Let's Just Play

    Science.gov (United States)

    Schmidt, Janet

    2003-01-01

    Children have a right to play. The idea is so simple it seems self-evident. But a stroll through any toy superstore, or any half-hour of so-called "children's" programming on commercial TV, makes it clear that violence, not play, dominates what's being sold. In this article, the author discusses how teachers and parents share the responsibility in…

  1. Matrix pentagons

    CERN Document Server

    Belitsky, A V

    2016-01-01

    The Operator Product Expansion for null polygonal Wilson loop in planar maximally supersymmetric Yang-Mills theory runs systematically in terms of multiparticle pentagon transitions which encode the physics of excitations propagating on the color flux tube ending on the sides of the four-dimensional contour. Their dynamics was unravelled in the past several years and culminated in a complete description of pentagons as an exact function of the 't Hooft coupling. In this paper we provide a solution for the last building block in this program, the SU(4) matrix structure arising from internal symmetry indices of scalars and fermions. This is achieved by a recursive solution of the Mirror and Watson equations obeyed by the so-called singlet pentagons and fixing the form of the twisted component in their tensor decomposition. The non-singlet, or charged, pentagons are deduced from these by a limiting procedure.

  2. Play vs. Procedures

    DEFF Research Database (Denmark)

    Hammar, Emil

    Through the theories of play by Gadamer (2004) and Henricks (2006), I will show how the relationship between play and game can be understood as dialectic and disruptive, thus challenging understandings of how the procedures of games determine player activity and vice versa. As such, I posit some...... analytical consequences for understandings of digital games as procedurally fixed (Boghost, 2006; Flannagan, 2009; Bathwaite & Sharp, 2010). That is, if digital games are argued to be procedurally fixed and if play is an appropriative and dialectic activity, then it could be argued that the latter affects...

  3. Play and Power

    DEFF Research Database (Denmark)

    The power of play, so central to psychoanalytic theory and practice, is conjoined to the social psychological or socio-politically coloured concept of power, giving rise to many fruitful discussions of how these concepts manifest themselves in clinical work with children, groups and adults....... The inspiration for this book was the 3-section EFPP conference in Copenhagen in May 2007 with the main theme "Play and Power". At the conference and in the book, this theme is presented both inside and outside the therapeutic space. It is amply illustrated in clinical cases from individual psychotherapies....... Play and power are also explored in the broader context of the community, however. In relation to society at large, psychoanalytic psychotherapy has important contributions to offer society, and we need playful creativity and power to bring forward our knowledge about it....

  4. Can play be defined?

    DEFF Research Database (Denmark)

    Eichberg, Henning

    2015-01-01

    Can play be defined? There is reason to raise critical questions about the established academic demand that at phenomenon – also in humanist studies – should first of all be defined, i.e. de-lineated and by neat lines limited to a “little box” that can be handled. The following chapter develops t....... Human beings can very well understand play – or whatever phenomenon in human life – without defining it........ The academic imperative of definition seems to be linked to the positivistic attempts – and produces sometimes monstrous definitions. Have they any philosophical value for our knowledge of what play is? Definition is not a universal instrument of knowledge-building, but a culturally specific construction...

  5. Playing and gaming

    DEFF Research Database (Denmark)

    Karoff, Helle Skovbjerg; Ejsing-Duun, Stine; Hanghøj, Thorkild

    2013-01-01

    The paper develops an approach of playing and gaming activities through the perspective of both activities as mood activities . The point of departure is that a game - is a tool with which we, through our practices, achieve different moods. This based on an empirical study of children's everyday...... lives, where the differences emerge through actual practices, i.e. through the creation of meaning in the specific situations. The overall argument is that it is not that important whether it is a playing or a gaming activity - it is however crucial to be aware of how moods occur and what their optimal...... dimensions: practices and moods. Practice is the concept of all the doing in the activities. Moods are the particular concept of sense and feeling of being, which is what we are drawn to when we are playing or gaming....

  6. Playing and gaming

    DEFF Research Database (Denmark)

    Karoff, Helle Skovbjerg; Ejsing-Duun, Stine; Hanghøj, Thorkild

    2013-01-01

    The paper develops an approach of playing and gaming activities through the perspective of both activities as mood activities . The point of departure is that a game - is a tool with which we, through our practices, achieve different moods. This based on an empirical study of children's everyday...... lives, where the differences emerge through actual practices, i.e. through the creation of meaning in the specific situations. The overall argument is that it is not that important whether it is a playing or a gaming activity - it is however crucial to be aware of how moods occur and what their optimal...... dimensions: practices and moods. Practice is the concept of all the doing in the activities. Moods are the particular concept of sense and feeling of being, which is what we are drawn to when we are playing or gaming....

  7. General game playing

    CERN Document Server

    Genesereth, Michael

    2014-01-01

    General game players are computer systems able to play strategy games based solely on formal game descriptions supplied at ""runtime"" (n other words, they don't know the rules until the game starts). Unlike specialized game players, such as Deep Blue, general game players cannot rely on algorithms designed in advance for specific games; they must discover such algorithms themselves. General game playing expertise depends on intelligence on the part of the game player and not just intelligence of the programmer of the game player.GGP is an interesting application in its own right. It is intell

  8. Playful Collaboration (or Not)

    DEFF Research Database (Denmark)

    Bogers, Marcel; Sproedt, Henrik

    2011-01-01

    also be conducive to deep learning. As such, a game can engage different dimensions of learning and embed elements of active, collaborative, cooperative and problem-based learning. Building on this logic, we present an exploratory case study of the use of a particular board game in a class of a course......This paper explores how games and play, which are deeply rooted in human beings as a way to learn and interact, can be used to teach certain concepts and practices related to open collaborative innovation. We discuss how playing games can be a source of creativity, imagination and fun, while it can...

  9. Five recent play dates

    DEFF Research Database (Denmark)

    Abildgaard, Mette Simonsen; Birkbak, Andreas; Jensen, Torben Elgaard

    2017-01-01

    An advantage of the playground metaphor is that it comes with the activity of going out on ‘play dates’ and developing friendships. In such playful relationships, there is always something at stake, but the interaction is also fun and inherently exploratory. In the following, we take a tour of five...... recent collaborative projects that the TANTlab has participated in. The projects differ widely and testify to different experiences with collaboration and intervention – from a data print on obesity with other researchers to a Facebook-driven intervention in Aalborg municipality’s primary school reform...

  10. Riemann Zeta Matrix Function

    OpenAIRE

    Kargın, Levent; Kurt, Veli

    2015-01-01

    In this study, obtaining the matrix analog of the Euler's reflection formula for the classical gamma function we expand the domain of the gamma matrix function and give a infinite product expansion of sinπxP.  Furthermore we define Riemann zeta matrix function and evaluate some other matrix integrals. We prove a functional equation for Riemann zeta matrix function.

  11. The Activity of Play

    DEFF Research Database (Denmark)

    Pichlmair, Martin

    2016-01-01

    This paper presents Activity Theory as a framework for understanding the action of playing games with the intention of building a foundation for the creation of new game design tools and methods. Activity Theory, an epistemological framework rooted in Soviet psychology of the first half of the 20...

  12. Playing the Role

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    The G20 London summit made history. While applauding the summit’s productive communique, Ni Xiaoling, senior financial observer with Xinhua News Agency, warns of the gap between the greater responsibilities the International Monetary Fund shoulders and its limited capabilities to play the role of coordinator in economic globalization.

  13. Abstraction through Game Play

    Science.gov (United States)

    Avraamidou, Antri; Monaghan, John; Walker, Aisha

    2012-01-01

    This paper examines the computer game play of an 11-year-old boy. In the course of building a virtual house he developed and used, without assistance, an artefact and an accompanying strategy to ensure that his house was symmetric. We argue that the creation and use of this artefact-strategy is a mathematical abstraction. The discussion…

  14. Mobilities at Play

    DEFF Research Database (Denmark)

    Ungruhe, Christian

    2017-01-01

    -level perspective there is still an analytical gap between the ambitions and experiences of migrating players and economic power relations at play on the one hand and the socio-cultural embedding of the transnational connections in football migration on the other. In order to understand why and how football...

  15. Play's Importance in School

    Science.gov (United States)

    Sandberg, Anette; Heden, Rebecca

    2011-01-01

    The purpose of this study is to contribute knowledge on and gain an understanding of elementary school teachers' perspectives on the function of play in children's learning processes. The study is qualitative with a hermeneutical approach and has George Herbert Mead as a theoretical frame of reference. Interviews have been carried out with seven…

  16. Play framework essentials

    CERN Document Server

    Richard-Foy, Julien

    2014-01-01

    This book targets Java and Scala developers who already have some experience in web development and who want to master Play framework quickly and efficiently. This book assumes you have a good level of knowledge and understanding of efficient Java and Scala code.

  17. A Significant Play

    Institute of Scientific and Technical Information of China (English)

    梁海光; 陈明

    2002-01-01

    Yesterday evening, I went to see a play. It was really significant. It was about Zheng Xiaoyue, a very clever and diligent middle school student. Unfortunately, her mother died when she and her brother were very young. Her father was out of work and,

  18. Multiscale Modeling of Ceramic Matrix Composites

    Science.gov (United States)

    Bednarcyk, Brett A.; Mital, Subodh K.; Pineda, Evan J.; Arnold, Steven M.

    2015-01-01

    Results of multiscale modeling simulations of the nonlinear response of SiC/SiC ceramic matrix composites are reported, wherein the microstructure of the ceramic matrix is captured. This micro scale architecture, which contains free Si material as well as the SiC ceramic, is responsible for residual stresses that play an important role in the subsequent thermo-mechanical behavior of the SiC/SiC composite. Using the novel Multiscale Generalized Method of Cells recursive micromechanics theory, the microstructure of the matrix, as well as the microstructure of the composite (fiber and matrix) can be captured.

  19. Play or science?

    DEFF Research Database (Denmark)

    Lieberoth, Andreas; Pedersen, Mads Kock; Sherson, Jacob

    2015-01-01

    Crowdscience games may hold unique potentials as learning opportunities compared to games made for fun or education. They are part of an actual science problem solving process: By playing, players help scientists, and thereby interact with real continuous research processes. This mixes the two...... worlds of play and science in new ways. During usability testing we discovered that users of the crowdscience game Quantum Dreams tended to answer questions in game terms, even when directed explicitly to give science explanations. We then examined these competing frames of understanding though a mixed...... correlational and grounded theory analysis. This essay presents the core ideas of crowdscience games as learning opportunities, and reports how a group of players used “game”, “science” and “conceptual” frames to interpret their experience. Our results suggest that oscillating between the frames instead...

  20. Understanding Games as Played

    DEFF Research Database (Denmark)

    Leino, Olli Tapio

    2009-01-01

    Researchers interested in player’s experience would assumedly, across disciplines, agree that the goal behind enquiries into player’s experience is to understand the how games’ features end up affecting the player’s experience. Much of the contemporary interdisciplinary research into player......’s experience leans toward the empirical-scientific, in the forms (neuro)psychology, sociology and cognitive science, to name a few. In such approaches, for example demonstrating correlation between physiological symptoms and an in-game event may amount to ‘understanding’. However, the experience of computer...... game play is a viable topic also for computer game studies within the general tradition of humanities. In such context, the idea of ‘understanding an experience’ invites an approach focusing on the experienced significance of events and objects within computer game play. This focus, in turn, suggests...

  1. Ravens at Play

    Directory of Open Access Journals (Sweden)

    Deborah Bird Rose

    2011-09-01

    Full Text Available ‘We were driving through Death Valley, an American-Australian and two Aussies, taking the scenic route from Las Vegas to Santa Cruz.’ This multi-voiced account of multispecies encounters along a highway takes up the challenge of playful and humorous writing that is as well deeply serious and theoretically provocative. Our travels brought us into what Donna Haraway calls the contact zone: a region of recognition and response. The contact zone is a place of significant questions: ‘Who are you, and so who are we? Here we are, and so what are we to become?’ Events were everything in this ecology of play, in which the movements of all the actors involved the material field in its entirety. We were brought into dances of approach and withdrawal, dances emerging directly, to paraphrase Brian Massumi, from the dynamic relation between a myriad of charged particles.

  2. Public Computation & Boundary Play

    CERN Document Server

    Sengupta, Pratim

    2016-01-01

    In this paper, we introduce 'public computation' as a genre of learning environments that can be used to radically broaden public participation in authentic, computation-enabled STEM disciplinary practices. Our paradigmatic approach utilizes open source software designed for professional scientists, engineers and digital artists, and situates them in an undiluted form, alongside live and archived expert support, in a public space. We present a case study of DigiPlay, a prototypical public computation space we designed at the University of Calgary, where users can interact directly with scientific simulations as well as the underlying open source code using an array of massive multi- touch screens. We argue that in such a space, public interactions with the code can be thought of as boundary work and play, through which public participation becomes legitimate scientific act, as the public engages in scientific creation through truly open-ended explorations with the code.

  3. Play. Learn. Innovate

    DEFF Research Database (Denmark)

    Sproedt, Henrik

    evidence that play and games could be interesting perspectives to take in order to understand complex social interaction. I come to the conclusion that – in innovation settings – the social dynamics that affect the process are essentially about transformation of knowledge across boundaries. I propose......„Play. Learn. Innovate. – Grasping the Social Dynamics of Participatory Innovation“ the title of this thesis describes how the complex interplay of unexpected events led to some burning questions and eventually to this thesis, which one could call an innovation*1*. During several years...... study were to better understand the theoretical foundations and practical implications of complex social interaction in organizational innovation settings. As I did not find any existing models or hypotheses that I was interested in testing I set out to discover how I could grasp complex social...

  4. "Playing" with our users

    DEFF Research Database (Denmark)

    Brooks, Anthony Lewis

    2014-01-01

    was from the amazing Dr Anthony Lewis Brooks (aka Tony) who has conceived the concepts GameAbilitation, ArtAbilitation, and Ludic Engagement Designs for All. While presenting some of his work on GameAbilitation and ArtAbilitation he brought up the subject of conducting research with users with disabilities......, about what happens to our users when research is over, funds are gone and the curtain of experiments has fallen. Dr Brooks presented the case of a young user who while unable to move and communicate had to part with the test device that provided him with interactive playful experience. We’ve all been...... confined in a house. For researchers that work with people with disabilities and in my case with playful interactions and positive immersive experience, we might have to think harder when we write project proposals or sketch our methodology. Devices, software and experience should be available to the users...

  5. Creativity and Playfulness

    DEFF Research Database (Denmark)

    Ejsing-Duun, Stine; Skovbjerg, Helle Marie

    2015-01-01

    Abstract: This article explores how student behavior and interactions change when teachers use “producing games” as a primary pedagogical strategy (Papert, 1980; Ejsing-Duun and Karoff, 2014). Based on student and teacher actions and responses, as well as on students' production—observed during f...... fieldwork—this paper emphasizes the importance of understanding how students explore creativity and playfulness while producing in learning situations....

  6. Creativity and Playfulness

    DEFF Research Database (Denmark)

    Ejsing-Duun, Stine; Skovbjerg, Helle Marie

    2015-01-01

    Abstract: This article explores how student behavior and interactions change when teachers use “producing games” as a primary pedagogical strategy (Papert, 1980; Ejsing-Duun and Karoff, 2014). Based on student and teacher actions and responses, as well as on students' production—observed during f...... fieldwork—this paper emphasizes the importance of understanding how students explore creativity and playfulness while producing in learning situations....

  7. Sparse Planar Array Synthesis Using Matrix Enhancement and Matrix Pencil

    Directory of Open Access Journals (Sweden)

    Mei-yan Zheng

    2013-01-01

    Full Text Available The matrix enhancement and matrix pencil (MEMP plays important roles in modern signal processing applications. In this paper, MEMP is applied to attack the problem of two-dimensional sparse array synthesis. Firstly, the desired array radiation pattern, as the original pattern for approximating, is sampled to form an enhanced matrix. After performing the singular value decomposition (SVD and discarding the insignificant singular values according to the prior approximate error, the minimum number of elements can be obtained. Secondly, in order to obtain the eigenvalues, the generalized eigen-decomposition is employed on the approximate matrix, which is the optimal low-rank approximation of the enhanced matrix corresponding to sparse planar array, and then the ESPRIT algorithm is utilized to pair the eigenvalues related to each dimension of the planar array. Finally, element positions and excitations of the sparse planar array are calculated according to the correct pairing of eigenvalues. Simulation results are presented to illustrate the effectiveness of the proposed approach.

  8. Celadon Figurines Play Instruments

    Institute of Scientific and Technical Information of China (English)

    1995-01-01

    This group of figurines, each 0.15m tall, were unearthed from a Tang Dynasty tomb in Changsha in 1977. Music was very developed in the Tang Dynasty. Colorful musical instruments and dances were popular both among the people and in the palace. These vivid-looking figurines wear pleated skirts with small sleeves and open chest, a style influenced by the non-Han nationalities living in the north and west of China. Some of the musical instruments were brought from the Western Regions. The figurines are playing the xiao (a vertical bamboo flute), the konghou (an

  9. Motivation, Creativity, Play & Learning

    DEFF Research Database (Denmark)

    Petersson, Eva

    2005-01-01

    implementation of robotic physical movement synchronously manipulated from sourced data movement information of a human. SoundScapes is a concept based on non-verbal communication and stimulation through interactive play with sounds and images, which is being realised in the production of a non-wearable sensor...... groups of children, including children with severe physical/multi disabilities. The sourced capture of the human data is from enhanced virtual interactive space created from sensors. The data is constituted of the situated multimodal communication and forms of expression. The ‘VIS’ is considered...

  10. Motivation, Creativity, Play & Learning

    DEFF Research Database (Denmark)

    Petersson, Eva

    2005-01-01

    implementation of robotic physical movement synchronously manipulated from sourced data movement information of a human. SoundScapes is a concept based on non-verbal communication and stimulation through interactive play with sounds and images, which is being realised in the production of a non-wearable sensor...... groups of children, including children with severe physical/multi disabilities. The sourced capture of the human data is from enhanced virtual interactive space created from sensors. The data is constituted of the situated multimodal communication and forms of expression. The ‘VIS’ is considered...

  11. "Playing" with our users

    DEFF Research Database (Denmark)

    Brooks, Anthony Lewis

    2014-01-01

    . Unfortunately if donated in the school they are rarely being used by the students. In the case of virtual reality or artistic installations it is extremely difficult to provide such equipment to users. Last but not least we are not sure how the software will be used and if the experience will continue...... after the conduct of the research. If not due to restrictions, user should at least continue to be part of the research’s debrief and next steps. While I was in Nottingham I realised that sometimes our research, our playful educational experience, our DIY VR helmet, our beta, glitchy, research-only game...

  12. Turning training into play

    DEFF Research Database (Denmark)

    Aarhus, Rikke; Grönvall, Erik; Larsen, Simon Bo;

    2011-01-01

    Embodied gaming has been adopted and gained credibility in the field of physical rehabilitation. In this paper, we report on findings from a six-month-long study of three groups of senior citizens, and their use of Nintendo Wii Fit in a supervised physical training context. We argue that the study...... participants generally found physical training both fun and socially engaging, and experienced improved fitness. We also argue that embodied gaming motivates seniors to do more than they think themselves capable of, and allows seniors with different mental and physical capabilities to play together. However...

  13. Play and playfulness, basic features of early childhood education

    NARCIS (Netherlands)

    Singer, E.

    2013-01-01

    This article argues that play and playfulness are basic features in early childhood education, but that play curricula can have serious drawbacks. The starting point is the play theory of the Dutch historian Johan Huizinga, a radical critic of the focus on the educational benefits of play. According

  14. Play and playfulness, basic features of early childhood education

    NARCIS (Netherlands)

    Singer, E.

    2013-01-01

    This article argues that play and playfulness are basic features in early childhood education, but that play curricula can have serious drawbacks. The starting point is the play theory of the Dutch historian Johan Huizinga, a radical critic of the focus on the educational benefits of play. According

  15. Playing The Lobby

    DEFF Research Database (Denmark)

    2014-01-01

    Playing a game can be defined as, in a fun way, to reach a goal by means of helpers and challenged by obstacles and opponents. In this workshop we will gain a new understanding of the lobby by making it into a game. The lobby of the museum can be understood as a game in which the players (the....... The object is surprisingly not to play the games, but to design them. Through the design process we are forced to discuss: What are the challenges of a particular lobby (e.g. ticketing, queueing, other visitors, guards, getting lost)? Which properties do the players have (e.g. patience, expectations, need...... of a toilet)? what boosters may they obtain in the lobby (e.g. coffee, help, souvenirs, signs)? And how can we make this an enjoyable experience? The object of the games is to understand the lobby in a new way to identify problems, and think of ways to improve the functions, flow, and services of the lobby....

  16. Playing it Real

    DEFF Research Database (Denmark)

    Grubert, Jens; Morrison, Ann; Munz, Helmut

    2012-01-01

    Magic lens and static peephole interfaces are used in numerous consumer mobile phone applications such as Augmented Reality browsers, games or digital map applications in a variety of contexts including public spaces. Interface performance has been evaluated for various interaction tasks involving...... spatial relationships in a scene. However, interface usage outside laboratory conditions has not been considered in depth in the evaluation of these interfaces. We present findings about the usage of magic lens and static peephole interfaces for playing a find-and-select game in a public space and report...... on the reactions of the public audience to participants’ interactions. Contrary to our expectations participants favored the magic lens over a static peephole interface despite tracking errors, fatigue and potentially conspicuous gestures. Most passersby did not pay attention to the participants and vice versa...

  17. New Criteria for Judging Generalized Strictly Diagonally Dominant Matrix

    Institute of Scientific and Technical Information of China (English)

    ZHANG Jin-song

    2015-01-01

    Generalized strictly diagonally dominant matrices play a wide and important role in computational mathematics, mathematical physics, theory of dynamical systems, etc. But it is difficult to judge a matrix is or not generalized strictly diagonally dominant matrix. In this paper, by using the properties of α-chain diagonally dominant matrix, we obtain new criteria for judging generalized strictly diagonally dominant matrix, which enlarge the identification range.

  18. Playful Learning and Montessori Education

    National Research Council Canada - National Science Library

    Angeline S Lillard

    2013-01-01

      Although Montessori education is often considered a form of playful learning, Maria Montessori herself spoke negatively about a major component of playful learning-pretend play, or fantasy-for young children...

  19. Imagination, Playfulness, and Creativity in Children's Play with Different Toys

    Science.gov (United States)

    Mo????ller, Signe?? Juhl?

    2015-01-01

    Based on a four-month experimental study of preschool children's play with creative-construction and social-fantasy toys, the author examines the in?uence of both types of toys on the play of preschool children. Her comparative analysis considers the impact of transformative play on the development of imagination during play activities and…

  20. Perturbative analysis of gauged matrix models

    Science.gov (United States)

    Dijkgraaf, Robbert; Gukov, Sergei; Kazakov, Vladimir A.; Vafa, Cumrun

    2003-08-01

    We analyze perturbative aspects of gauged matrix models, including those where classically the gauge symmetry is partially broken. Ghost fields play a crucial role in the Feynman rules for these vacua. We use this formalism to elucidate the fact that nonperturbative aspects of N=1 gauge theories can be computed systematically using perturbative techniques of matrix models, even if we do not possess an exact solution for the matrix model. As examples we show how the Seiberg-Witten solution for N=2 gauge theory, the Montonen-Olive modular invariance for N=1*, and the superpotential for the Leigh-Strassler deformation of N=4 can be systematically computed in perturbation theory of the matrix model or gauge theory (even though in some of these cases an exact answer can also be obtained by summing up planar diagrams of matrix models).

  1. Perturbative Analysis of Gauged Matrix Models

    CERN Document Server

    Dijkgraaf, R; Kazakov, V A; Vafa, C; Dijkgraaf, Robbert; Gukov, Sergei; Kazakov, Vladimir A.; Vafa, Cumrun

    2003-01-01

    We analyze perturbative aspects of gauged matrix models, including those where classically the gauge symmetry is partially broken. Ghost fields play a crucial role in the Feynman rules for these vacua. We use this formalism to elucidate the fact that non-perturbative aspects of N=1 gauge theories can be computed systematically using perturbative techniques of matrix models, even if we do not possess an exact solution for the matrix model. As examples we show how the Seiberg-Witten solution for N=2 gauge theory, the Montonen-Olive modular invariance for N=1*, and the superpotential for the Leigh-Strassler deformation of N=4 can be systematically computed in perturbation theory of the matrix model/gauge theory (even though in some of these cases the exact answer can also be obtained by summing up planar diagrams of matrix models).

  2. Playful Learning and Montessori Education

    Science.gov (United States)

    Lillard, Angeline S.

    2013-01-01

    Although Montessori education is often considered a form of playful learning, Maria Montessori herself spoke negatively about a major component of playful learning--pretend play, or fantasy--for young children. In this essay, the author discusses this apparent contradiction: how and why Montessori education includes elements of playful learning…

  3. Play and Positive Group Dynamics

    Science.gov (United States)

    Thompson, Pam; White, Samantha

    2010-01-01

    Play is an important part of a child's life and essential to learning and development (Vygotsky, 1978). It is vital that students participate in play and that play be conducted in a restorative manner. Play allows a variety of group dynamics to emerge. Irvin Yalom (1995) identifies 11 curative factors of the group experience. These factors include…

  4. Formalization of Matrix Theory in HOL4

    Directory of Open Access Journals (Sweden)

    Zhiping Shi

    2014-08-01

    Full Text Available Matrix theory plays an important role in modeling linear systems in engineering and science. To model and analyze the intricate behavior of complex systems, it is imperative to formalize matrix theory in a metalogic setting. This paper presents the higher-order logic (HOL formalization of the vector space and matrix theory in the HOL4 theorem proving system. Formalized theories include formal definitions of real vectors and matrices, algebraic properties, and determinants, which are verified in HOL4. Two case studies, modeling and verifying composite two-port networks and state transfer equations, are presented to demonstrate the applicability and effectiveness of our work.

  5. Play and playfulness in early childhood education and care.

    Directory of Open Access Journals (Sweden)

    Singer E.

    2015-06-01

    Full Text Available Play and playfulness are basic features in early childhood education. The elements of play are pleasure, a sense of freedom, and the co-construction of shared meaning through the use of rules or rhythms. Play and learning are closely related in early childhood. But when the focus on the educational benefits of play becomes too strong, the most essential feature of play is lost: children’s pleasure. Young children in group settings often have to adapt to the teachers’ demands related to security, hygiene, and social norms and values. But the playfulness of the teachers helps to overcome differences in power in the caregiver-child relationship and prevents young children from becoming overburdened with strict rules and group discipline. Play and playfulness are a resource of shared pleasure and creativity in learning processes.

  6. Ouroboros - Playing A Biochemical

    Directory of Open Access Journals (Sweden)

    D. T. Rodrigues

    2014-08-01

    Full Text Available Ouroboros: Playing A Biochemical RODRIGUES,D.T.1,2;GAYER, M.C.1,2; ESCOTO, D.F.1; DENARDIN, E.L.G.2, ROEHRS, R.1,2 1Interdisciplinary Research Group on Teaching Practice, Graduate Program in Biochemistry, Unipampa, RS, Brazil 2Laboratory of Physicochemical Studies and Natural Products, Post Graduate Program in Biochemistry, Unipampa, RS, Brazil Introduction: Currently, teachers seek different alternatives to enhance the teaching-learning process. Innovative teaching methodologies are increasingly common tools in educational routine. The use of games, electronic or conventional, is an effective tool to assist in learning and also to raise the social interaction between students. Objective: In this sense our work aims to evaluate the card game and "Ouroboros" board as a teaching and learning tool in biochemistry for a graduating class in Natural Sciences. Materials and methods: The class gathered 22 students of BSc in Natural Sciences. Each letter contained a question across the board that was drawn to a group to answer within the allotted time. The questions related concepts of metabolism, organic and inorganic chemical reactions, bioenergetics, etc.. Before the game application, students underwent a pre-test with four issues involving the content that was being developed. Soon after, the game was applied. Then again questions were asked. Data analysis was performed from the ratio of the number of correct pre-test and post-test answers. Results and discussion: In the pre-test 18.1% of the students knew all issues, 18.1% got 3 correct answers, 40.9% answered only 2 questions correctly and 22.7% did not hit any. In post-test 45.4% answered all the questions right, 31.8% got 3 questions and 22.7% got 2 correct answers. The results show a significant improvement of the students about the field of content taught through the game. Conclusion: Generally, traditional approaches of chemistry and biochemistry are abstract and complex. Thus, through games

  7. The Matrix Cookbook

    DEFF Research Database (Denmark)

    Petersen, Kaare Brandt; Pedersen, Michael Syskind

    Matrix identities, relations and approximations. A desktop reference for quick overview of mathematics of matrices.......Matrix identities, relations and approximations. A desktop reference for quick overview of mathematics of matrices....

  8. Motivations for play in computer role-playing games

    DEFF Research Database (Denmark)

    Tychsen, Anders; Hitchens, Michael; Brolund, Thea

    2008-01-01

    In this paper the motivations for play in the context of single-and multi-player digital Role-Playing Games (RPGs) are examined. Survey data were drawn from respondents online and participants in a related experimental study. The results indicate that motivations for play are not simple constructs......, but rather composed of multiple motivational drivers that are heavily interrelated and act in concert. Character uniqueness and Discovery & Immersion were the highest ranked motivational categories. Different levels of detail in motivations for playing single-/multi- Player RPGs were located......, with mechanistic/tactical play and character-based/social play being the two overall motivational factors. Copyright 2008 ACM....

  9. Matrix with Prescribed Eigenvectors

    Science.gov (United States)

    Ahmad, Faiz

    2011-01-01

    It is a routine matter for undergraduates to find eigenvalues and eigenvectors of a given matrix. But the converse problem of finding a matrix with prescribed eigenvalues and eigenvectors is rarely discussed in elementary texts on linear algebra. This problem is related to the "spectral" decomposition of a matrix and has important technical…

  10. Solar Power at Play

    Science.gov (United States)

    2007-03-01

    For the very first time, astronomers have witnessed the speeding up of an asteroid's rotation, and have shown that it is due to a theoretical effect predicted but never seen before. The international team of scientists used an armada of telescopes to discover that the asteroid's rotation period currently decreases by 1 millisecond every year, as a consequence of the heating of the asteroid's surface by the Sun. Eventually it may spin faster than any known asteroid in the solar system and even break apart. ESO PR Photo 11a/07 ESO PR Photo 11a/07 Asteroid 2000 PH5 "The Yarkovsky-O'Keefe-Radzievskii-Paddack (YORP) effect is believed to alter the way small bodies in the Solar System rotate," said Stephen Lowry (Queens University Belfast, UK), lead-author of one of the two companion papers in which this work is reported [1, 2]. "The warming caused by sunlight hitting the surfaces of asteroids and meteoroids leads to a gentle recoil effect as the heat is released," he added. "By analogy, if one were to shine light on a propeller over a long enough period, it would start spinning." Although this is an almost immeasurably weak force, its effect over millions of years is far from negligible. Astronomers believe the YORP effect may be responsible for spinning some asteroids up so fast that they break apart, perhaps leading to the formation of double asteroids. Others may be slowed down so that they take many days to complete a full turn. The YORP effect also plays an important role in changing the orbits of asteroids between Mars and Jupiter, including their delivery to planet-crossing orbits, such as those of near-Earth asteroids. Despite its importance, the effect has never been seen acting on a solar system body, until now. Using extensive optical and radar imaging from powerful Earth-based observatories, astronomers have directly observed the YORP effect in action on a small near-Earth asteroid, known as (54509) 2000 PH5. Shortly after its discovery in 2000, it was

  11. Play technique in psychodynamic psychotherapy.

    Science.gov (United States)

    Yanof, Judith A

    2013-04-01

    Imaginary play is often a child's best way of communicating affects, fantasies, and internal states. In play children are freer to express their forbidden and conflicted thoughts. Consequently, one of the best ways for the therapist to enter the child's world is to do so from within the displacement of the play process. For children who cannot play, the therapist's goal is to teach the child to use play as a means of communication and to create meaning. This article present clinical examples to illustrate how the author uses play in the clinical situation.

  12. Learning, Play, and Your Newborn

    Science.gov (United States)

    ... Old Feeding Your 1- to 2-Year-Old Learning, Play, and Your Newborn KidsHealth > For Parents > Learning, ... juega su recién nacido What Is My Newborn Learning? Play is the chief way that infants learn ...

  13. Problematic Game Play: The Diagnostic Value of Playing Motives, Passion, and Playing Time in Men

    Directory of Open Access Journals (Sweden)

    Julia Kneer

    2015-04-01

    Full Text Available Internet gaming disorder is currently listed in the DSM—not in order to diagnose such a disorder but to encourage research to investigate this phenomenon. Even whether it is still questionable if Internet Gaming Disorder exists and can be judged as a form of addiction, problematic game play is already very well researched to cause problems in daily life. Approaches trying to predict problematic tendencies in digital game play have mainly focused on playing time as a diagnostic criterion. However, motives to engage in digital game play and obsessive passion for game play have also been found to predict problematic game play but have not yet been investigated together. The present study aims at (1 analyzing if obsessive passion can be distinguished from problematic game play as separate concepts, and (2 testing motives of game play, passion, and playing time for their predictive values for problematic tendencies. We found (N = 99 males, Age: M = 22.80, SD = 3.81 that obsessive passion can be conceptually separated from problematic game play. In addition, the results suggest that compared to solely playing time immersion as playing motive and obsessive passion have added predictive value for problematic game play. The implications focus on broadening the criteria in order to diagnose problematic playing.

  14. The Importance of Being Playful.

    Science.gov (United States)

    Bodrova, Elena; Leong, Deborah J.

    2003-01-01

    Recent research provides evidence of the strong connections between quality of play in preschool years and children's readiness for school instruction. Mature play, characterized by imaginary situations, multiple roles, clearly defined rules, flexible themes, language development, length of play, helps students' cognitive development. (Contains 12…

  15. Play in Evolution and Development

    Science.gov (United States)

    Pellegrini, Anthony D.; Dupuis, Danielle; Smith, Peter K.

    2007-01-01

    In this paper we examine the role of play in human ontogeny and phylogeny, following Surplus Resource Theory. We consider how juveniles use play to sample their environment in order to develop adaptive behaviors. We speculate about how innovative behaviors developed in play in response to environmental novelty may influence subsequent evolutionary…

  16. Pretend Play and Creative Processes

    Science.gov (United States)

    Russ, Sandra W.; Wallace, Claire E.

    2013-01-01

    The authors contend that many cognitive abilities and affective processes important in creativity also occur in pretend play and that pretend play in childhood affects the development of creativity in adulthood. They discuss a variety of theories and observations that attempt to explain the importance of pretend play to creativity. They argue that…

  17. Extracellular matrix and tissue engineering applications

    NARCIS (Netherlands)

    Fernandes, Hugo; Moroni, Lorenzo; Blitterswijk, van Clemens; Boer, de Jan

    2009-01-01

    The extracellular matrix is a key component during regeneration and maintenance of tissues and organs, and it therefore plays a critical role in successful tissue engineering as well. Tissue engineers should recognise that engineering technology can be deduced from natural repair processes. Due to a

  18. Parallelism in matrix computations

    CERN Document Server

    Gallopoulos, Efstratios; Sameh, Ahmed H

    2016-01-01

    This book is primarily intended as a research monograph that could also be used in graduate courses for the design of parallel algorithms in matrix computations. It assumes general but not extensive knowledge of numerical linear algebra, parallel architectures, and parallel programming paradigms. The book consists of four parts: (I) Basics; (II) Dense and Special Matrix Computations; (III) Sparse Matrix Computations; and (IV) Matrix functions and characteristics. Part I deals with parallel programming paradigms and fundamental kernels, including reordering schemes for sparse matrices. Part II is devoted to dense matrix computations such as parallel algorithms for solving linear systems, linear least squares, the symmetric algebraic eigenvalue problem, and the singular-value decomposition. It also deals with the development of parallel algorithms for special linear systems such as banded ,Vandermonde ,Toeplitz ,and block Toeplitz systems. Part III addresses sparse matrix computations: (a) the development of pa...

  19. Phosphine in various matrixes

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    Matrix-bound phosphine was determined in the Jiaozhou Bay coastal sediment, in prawn-pond bottom soil, in the eutrophic lake Wulongtan, in the sewage sludge and in paddy soil as well. Results showed that matrix-bound phosphine levels in freshwater and coastal sediment, as well as in sewage sludge, are significantly higher than that in paddy soil. The correlation between matrix bound phosphine concentrations and organic phosphorus contents in sediment samples is discussed.

  20. Motivations for play in computer role-playing games

    DEFF Research Database (Denmark)

    Tychsen, Anders; Hitchens, Michael; Brolund, Thea

    2008-01-01

    In this paper the motivations for play in the context of single-and multi-player digital Role-Playing Games (RPGs) are examined. Survey data were drawn from respondents online and participants in a related experimental study. The results indicate that motivations for play are not simple constructs......, but rather composed of multiple motivational drivers that are heavily interrelated and act in concert. Character uniqueness and Discovery & Immersion were the highest ranked motivational categories. Different levels of detail in motivations for playing single-/multi- Player RPGs were located...

  1. Solution of the Lyapunov matrix equation for a system with a time-dependent stiffness matrix

    DEFF Research Database (Denmark)

    Pommer, Christian; Kliem, Wolfhard

    2004-01-01

    The stability of the linearized model of a rotor system with non-symmetric strain and axial loads is investigated. Since we are using a fixed reference system, the differential equations have the advantage to be free of Coriolis and centrifugal forces. A disadvantage is nevertheless the occurrenc...... of time-dependent periodic terms in the stiffness matrix. However, by solving the Lyapunov matrix equation we can formulate several stability conditions for the rotor system. Hereby the positive definiteness of a certain averaged stiffness matrix plays a crucial role....

  2. Behavioral approaches to promoting play.

    Science.gov (United States)

    Stahmer, Aubyn C; Ingersoll, Brooke; Carter, Cynthia

    2003-12-01

    A variety of techniques grounded in behavioral psychology, and more specifically in applied behavior analysis, have been established to increase and improve play skills in children with autistic spectrum disorders. This article introduces a set of efficacious methods, which range from highly structured techniques to more naturalistic strategies. It focuses on object play as other authors in the issue discuss social play in greater depth. Behavioral techniques that are reviewed include: discrete trial training, use of stereotyped behaviors to increase play skills, pivotal response training, reciprocal imitation training, differential reinforcement of appropriate behavior, in vivo modeling and play scripts, and video modeling. A discussion of expanding behavior techniques to teach more complex play as well as training in varied environments is also presented. References are provided to allow the reader to obtain more in-depth information about each technique.

  3. Playing with the Multiple Intelligences: How Play Helps Them Grow

    Science.gov (United States)

    Eberle, Scott G.

    2011-01-01

    Howard Gardner first posited a list of "multiple intelligences" as a liberating alternative to the assumptions underlying traditional IQ testing in his widely read study "Frames of Mind" (1983). Play has appeared only in passing in Gardner's thinking about intelligence, however, even though play instructs and trains the verbal, interpersonal,…

  4. Let's Play: Teaching Play Skills to Young Children with Autism

    Science.gov (United States)

    Boutot, E. Amanda; Guenther, Tracee; Crozier, Shannon

    2005-01-01

    Watch any young child and you will likely see him or her engaged in some form of play. Play is an integral part of early childhood development in which typically developing children learn social and language skills, as well as appropriate behaviors, problem solving, and a variety of other cognitive skills. By its very definition, autism is a…

  5. PlayFit: Designing playful activity interventions for teenagers

    NARCIS (Netherlands)

    M. M. Deen; Rob Tieben; Dr. Tilde Bekker; Dr. Janienke Sturm; B.A.M. Ben Schouten

    2011-01-01

    Young people spend a large part of their day sedentary, both at school and at home. The aim of the PlayFit project is to persuade teenagers to lead a more active lifestyle by using digital as well as non-digital games and play. In this position paper, we describe in detail the three key principles o

  6. Extracellular Matrix and Dermal Fibroblast Function in the Healing Wound

    OpenAIRE

    Tracy, Lauren E.; Minasian, Raquel A.; Caterson, E.J.

    2016-01-01

    Significance: Fibroblasts play a critical role in normal wound healing. Various extracellular matrix (ECM) components, including collagens, fibrin, fibronectin, proteoglycans, glycosaminoglycans, and matricellular proteins, can be considered potent protagonists of fibroblast survival, migration, and metabolism.

  7. The Internet of Playful Things

    DEFF Research Database (Denmark)

    Wyeth, Peta; Brereton, Margot; Roe, Paul;

    2015-01-01

    This one-day workshop brings together researchers and practitioners to share knowledge and practices on how people can connect and interact with the Internet of Things in a playful way. Open to participants with a diverse range of interests and expertise, and by exploring novel ways to playfully...... will be a road map to support the development of a Model of Playful Connectedness, focusing on how best to design and make playful networks of things, identifying the challenges that need to be addressed in order to do so....

  8. Symbolic play and language development.

    Science.gov (United States)

    Orr, Edna; Geva, Ronny

    2015-02-01

    Symbolic play and language are known to be highly interrelated, but the developmental process involved in this relationship is not clear. Three hypothetical paths were postulated to explore how play and language drive each other: (1) direct paths, whereby initiation of basic forms in symbolic action or babbling, will be directly related to all later emerging language and motor outputs; (2) an indirect interactive path, whereby basic forms in symbolic action will be associated with more complex forms in symbolic play, as well as with babbling, and babbling mediates the relationship between symbolic play and speech; and (3) a dual path, whereby basic forms in symbolic play will be associated with basic forms of language, and complex forms of symbolic play will be associated with complex forms of language. We micro-coded 288 symbolic vignettes gathered during a yearlong prospective bi-weekly examination (N=14; from 6 to 18 months of age). Results showed that the age of initiation of single-object symbolic play correlates strongly with the age of initiation of later-emerging symbolic and vocal outputs; its frequency at initiation is correlated with frequency at initiation of babbling, later-emerging speech, and multi-object play in initiation. Results support the notion that a single-object play relates to the development of other symbolic forms via a direct relationship and an indirect relationship, rather than a dual-path hypothesis.

  9. Multispecies methods, technologies for play

    DEFF Research Database (Denmark)

    Jørgensen, Ida Kathrine Hammeleff; Wirman, Hanna

    2016-01-01

    reveals limitations of designers’ knowledge of prospected users. The article explores how to approach participants who cannot express themselves verbally and how to recognise play that may not look familiar to the designer. The article finally presents a participatory design method that allows for non......-human contributions in design. This method applies play as an interspecies co-creative act and can be used as a starting point for addressing questions of difference in play and designing games that allow for ambiguous play....

  10. Control of extracellular matrix assembly by syndecan-2 proteoglycan

    DEFF Research Database (Denmark)

    Klass, C M; Couchman, J R; Woods, A

    2000-01-01

    Extracellular matrix (ECM) deposition and organization is maintained by transmembrane signaling and integrins play major roles. We now show that a second transmembrane component, syndecan-2 heparan sulfate proteoglycan, is pivotal in matrix assembly. Chinese Hamster Ovary (CHO) cells were stably...

  11. Patience of matrix games

    DEFF Research Database (Denmark)

    Hansen, Kristoffer Arnsfelt; Ibsen-Jensen, Rasmus; Podolskii, Vladimir V.;

    2013-01-01

    For matrix games we study how small nonzero probability must be used in optimal strategies. We show that for image win–lose–draw games (i.e. image matrix games) nonzero probabilities smaller than image are never needed. We also construct an explicit image win–lose game such that the unique optimal...

  12. Patience of matrix games

    DEFF Research Database (Denmark)

    Hansen, Kristoffer Arnsfelt; Ibsen-Jensen, Rasmus; Podolskii, Vladimir V.

    2013-01-01

    For matrix games we study how small nonzero probability must be used in optimal strategies. We show that for image win–lose–draw games (i.e. image matrix games) nonzero probabilities smaller than image are never needed. We also construct an explicit image win–lose game such that the unique optimal...

  13. Transfer function matrix

    Science.gov (United States)

    Seraji, H.

    1987-01-01

    Given a multivariable system, it is proved that the numerator matrix N(s) of the transfer function evaluated at any system pole either has unity rank or is a null matrix. It is also shown that N(s) evaluated at any transmission zero of the system has rank deficiency. Examples are given for illustration.

  14. Field effect transistor with HfO2/Parylene-C bilayer hybrid gate insulator

    Science.gov (United States)

    Kumar, Neeraj; Kito, Ai; Inoue, Isao

    2015-03-01

    We have investigated the electric field control of the carrier density and the mobility at the surface of SrTiO3, a well known transition-metal oxide, in a field effect transistor (FET) geometry. We have used a Parylene-C (8 nm)/HfO2 (20 nm) double-layer gate insulator (GI), which can be a potential candidate for a solid state GI for the future Mott FETs. So far, only examples of the Mott FET used liquid electrolyte or ferroelectric oxides for the GI. However, possible electrochemical reaction at the interface causes damage to the surface of the Mott insulator. Thus, an alternative GI has been highly desired. We observed that even an ultra thin Parylene-C layer is effective for keeping the channel surface clean and free from oxygen vacancies. The 8 nm Parylene-C film has a relatively low resistance and consequentially its capacitance does not dominate the total capacitance of the Parylene-C/HfO2 GI. The breakdown gate voltage at 300 K is usually more than 10 V (~ 3.4 MV/cm). At gate voltage of 3 V the carrier density measured by the Hall effect is about 3 ×1013 cm-2, competent to cause the Mott transition. Moreover, the field effect mobility reaches in the range of 10 cm2/Vs indicating the Parylene-C passivated surface is actually very clean.

  15. Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films

    OpenAIRE

    Yurchuk, Ekaterina

    2015-01-01

    Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO2) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO2 thin films ...

  16. Experimental study of gradual/abrupt dynamics of HfO2-based memristive devices

    Science.gov (United States)

    Brivio, S.; Covi, E.; Serb, A.; Prodromakis, T.; Fanciulli, M.; Spiga, S.

    2016-09-01

    The resistance switching dynamics of TiN/HfO2/Pt devices is analyzed in this paper. When biased with a voltage ramp of appropriate polarity, the devices experience SET transitions from high to low resistance states in an abrupt manner, which allows identifying a threshold voltage. However, we find that the stimulation with trains of identical pulses at voltages near the threshold results in a gradual SET transition, whereby the resistive state visits a continuum of intermediate levels as it approaches some low resistance state limit. On the contrary, RESET transitions from low to high resistance states proceed in a gradual way under voltage ramp stimulation, while gradual resistance changes driven by trains of identical spikes cover only a limited resistance window. The results are discussed in terms of the relations among the thermo-electrochemical effects of Joule heating, ion mobility, and resistance change, which provide positive and negative closed loop processes in SET and RESET, respectively. Furthermore, the effect of the competition between opposite tendencies of filament dissolution and formation at opposite metal/HfO2 interfaces is discussed as an additional ingredient affecting the switching dynamics.

  17. Impact of lanthanum on the modification of HfO2 films structure

    Institute of Scientific and Technical Information of China (English)

    T. P. Smirnova; L.V. Yakovkina; V.O. Borisov

    2015-01-01

    LaxHf1–xOy thin films with various concentrations of La, homogeneous and nonhomogeneous distributions of elements throughout the films thickness was purposefully grown by CVD. The composition of the films and their chemical structures were characterized throughout the films thickness by X-ray photoelectron spectroscopy (XPS) and energy-dispersive X-ray spectrometry (EDXA). A full picture of the film crystallinity was provided by the combination of grazing incidence X-ray diffraction (GIXRD) synchrotron radiation (SR) and high resolution transmission electron microscopy (HR TEM). It was shown that La acted as “molar volume modulator” and stabilized the nonequilibrium atT≤1300 °C cubic phases. The samples with La content in range of 7 at.%

  18. Current Thermal Emission from Photonic Nanostructures Composed of TA, W, GE, and HFO2 Thin Films

    Science.gov (United States)

    2015-03-01

    and Manufacturing Directorate. Substrates chosen for this study consisted of p-type silicon (Si) wafers having Prime grade, 1-10 Ω resistivity, and...100) orientation. These Si wafers were obtained by AFRL from University Wafer . All of the designs will begin with a DCMS deposition technique that...Sputtering (DCMS) technique. The micrograph was taken at 20,000x magnification with 2 kV at 45° from surface normal. The surface W layer displays bumps

  19. Seductive play in digital games

    DEFF Research Database (Denmark)

    Jørgensen, Ida Kathrine Hammeleff

    2015-01-01

    seduction is meaningless because it is nothing but appearances – a sign without reference. In his conceptualization of seduction Baudrillard draws heavily upon Huizinga’s (1950) and Callois’ (1961) theory of play. To Baudrillard play is the mode of the seductive. But in contrast to both Callois and Huizinga...

  20. Making Play Work for Education

    Science.gov (United States)

    Weisberg, Deena Skolnick; Kittredge, Audrey K.; Hirsh-Pasek, Kathy; Golinkoff, Roberta Michnick; Klahr, David

    2015-01-01

    Children, especially in the preschool years, learn a tremendous amount through play. Research on guided play demonstrates how schools can couple a curriculum-centered preschool program with a developmentally appropriate pedagogical approach to classroom teaching. However, to fully test this claim, we need a clear definition of the term…

  1. Transmedia Play: Literacy across Media

    Science.gov (United States)

    Alper, Meryl; Herr-Stephenson, Rebecca

    2013-01-01

    Transmedia play is a new way to understand how children develop critical media literacy and new media literacies through their interactions with contemporary media that links stories and structures across platforms. This essay highlights five characteristics of transmedia play that make it particularly useful for learning:…

  2. Sand and Water Table Play

    Science.gov (United States)

    Wallace, Ann H.; White, Mary J.; Stone, Ryan

    2010-01-01

    The authors observed preschoolers engaged at the sand and water table to determine if math could be found within their play. Wanting to understand how children interact with provided materials and what kinds of math ideas they explore during these interactions, the authors offer practical examples of how such play can promote mathematical…

  3. Playful Interfaces: Introduction and History

    NARCIS (Netherlands)

    Nijholt, Anton; Nijholt, Anton

    2014-01-01

    In this short survey we have some historical notes about human-computer interface development with an emphasis on interface technology that has allowed us to design playful interactions with applications. The applications do not necessarily have to be entertainment applications. We can have playful

  4. Young Children and War Play.

    Science.gov (United States)

    Carlsson-Paige, Nancy; Levin, Diane E.

    1988-01-01

    In a recent survey of parents and early childhood professionals the prevalence of war play among children and an increase in the amount of violence in children's play was noted. Outlines how the deregulation of children's television during the Reagan administration has affected children's exposure to violence in children's television programming.…

  5. Sand and Water Table Play

    Science.gov (United States)

    Wallace, Ann H.; White, Mary J.; Stone, Ryan

    2010-01-01

    The authors observed preschoolers engaged at the sand and water table to determine if math could be found within their play. Wanting to understand how children interact with provided materials and what kinds of math ideas they explore during these interactions, the authors offer practical examples of how such play can promote mathematical…

  6. The Fractal Self at Play

    Science.gov (United States)

    Marks-Tarlow, Terry

    2010-01-01

    In this article, the author draws on contemporary science to illuminate the relationship between early play experiences, processes of self-development, and the later emergence of the fractal self. She argues that orientation within social space is a primary function of early play and developmentally a two-step process. With other people and with…

  7. The Play of Socratic Dialogue

    Science.gov (United States)

    Smith, Richard

    2011-01-01

    Proponents of philosophy for children generally see themselves as heirs to the "Socratic" tradition. They often claim too that children's aptitude for play leads them naturally to play with abstract, philosophical ideas. However in Plato's dialogues we find in the mouth of "Socrates" many warnings against philosophising with the young. Those…

  8. Empowering Groups that Enable Play

    Science.gov (United States)

    Wilson, David Sloan; Marshall, Danielle; Iserhott, Hindi

    2011-01-01

    Creating play environments for children usually requires groups of adults working together. An extensive scientific literature describes how groups function to achieve shared goals in general terms, and groups attempting to empower play may find this literature useful. Design principles for managing natural resources, identified by Elinor Ostrom…

  9. Let's Play Three on Three!

    Science.gov (United States)

    Kern, Jack; Calleja, Paul

    2008-01-01

    Over the course of nine years as a supervisor of intern teachers, the first author collected observations of game play during lessons taught by intern teachers or their mentors. In general, the observations indicated that the majority of students got limited practice opportunities during game play. A close look at the data revealed an interesting…

  10. On the Fair Play Spirit%论Fair Play

    Institute of Scientific and Technical Information of China (English)

    张维; 林琳

    2011-01-01

    采用文献资料法,历史分析了"Fair Play"精神的起源,并结合Fair Play精神面临的时代压力,探讨现代体育生命力延续的议题,提出"人"才是体育及其"Fair Play"精神继续生存或走向毁灭的主宰者.

  11. Improved Matrix Uncertainty Selector

    CERN Document Server

    Rosenbaum, Mathieu

    2011-01-01

    We consider the regression model with observation error in the design: y=X\\theta* + e, Z=X+N. Here the random vector y in R^n and the random n*p matrix Z are observed, the n*p matrix X is unknown, N is an n*p random noise matrix, e in R^n is a random noise vector, and \\theta* is a vector of unknown parameters to be estimated. We consider the setting where the dimension p can be much larger than the sample size n and \\theta* is sparse. Because of the presence of the noise matrix N, the commonly used Lasso and Dantzig selector are unstable. An alternative procedure called the Matrix Uncertainty (MU) selector has been proposed in Rosenbaum and Tsybakov (2010) in order to account for the noise. The properties of the MU selector have been studied in Rosenbaum and Tsybakov (2010) for sparse \\theta* under the assumption that the noise matrix N is deterministic and its values are small. In this paper, we propose a modification of the MU selector when N is a random matrix with zero-mean entries having the variances th...

  12. Playful biometrics: controversial technology through the lens of play.

    Science.gov (United States)

    Ellerbrok, Ariane

    2011-01-01

    This article considers the role of play in the context of technological emergence and expansion, particularly as it relates to recently emerging surveillance technologies. As a case study, I consider the trajectory of automated face recognition—a biometric technology of numerous applications, from its more controversial manifestations under the rubric of national security to a clearly emerging orientation toward play. This shift toward “playful” biometrics—or from a technology traditionally coded as “hard” to one now increasingly coded as “soft”—is critical insofar as it renders problematic the traditional modes of critique that have, up until this point, challenged the expansion of biometric systems into increasingly ubiquitous realms of everyday life. In response to this dynamic, I propose theorizing the expansion of face recognition specifically in relation to “play,” a step that allows us to broaden the critical space around newly emerging playful biometrics, as well as playful surveillance more generally. In addition, play may also have relevance for theorizing other forms of controversial technology, particularly given its potential role in processes of obfuscation, normalization, and marginalization.

  13. More on rotations as spin matrix polynomials

    Energy Technology Data Exchange (ETDEWEB)

    Curtright, Thomas L. [Department of Physics, University of Miami, Coral Gables, Florida 33124-8046 (United States)

    2015-09-15

    Any nonsingular function of spin j matrices always reduces to a matrix polynomial of order 2j. The challenge is to find a convenient form for the coefficients of the matrix polynomial. The theory of biorthogonal systems is a useful framework to meet this challenge. Central factorial numbers play a key role in the theoretical development. Explicit polynomial coefficients for rotations expressed either as exponentials or as rational Cayley transforms are considered here. Structural features of the results are discussed and compared, and large j limits of the coefficients are examined.

  14. Elementary matrix theory

    CERN Document Server

    Eves, Howard

    1980-01-01

    The usefulness of matrix theory as a tool in disciplines ranging from quantum mechanics to psychometrics is widely recognized, and courses in matrix theory are increasingly a standard part of the undergraduate curriculum.This outstanding text offers an unusual introduction to matrix theory at the undergraduate level. Unlike most texts dealing with the topic, which tend to remain on an abstract level, Dr. Eves' book employs a concrete elementary approach, avoiding abstraction until the final chapter. This practical method renders the text especially accessible to students of physics, engineeri

  15. Rheocasting Al matrix composites

    Energy Technology Data Exchange (ETDEWEB)

    Girot, F.A.; Albingre, L.; Quenisset, J.M.; Naslain, R.

    1987-11-01

    A development status account is given for the rheocasting method of Al-alloy matrix/SiC-whisker composites, which involves the incorporation and homogeneous distribution of 8-15 vol pct of whiskers through the stirring of the semisolid matrix melt while retaining sufficient fluidity for casting. Both 1-, 3-, and 6-mm fibers of Nicalon SiC and and SiC whisker reinforcements have been experimentally investigated, with attention to the characterization of the resulting microstructures and the effects of fiber-matrix interactions. A thin silica layer is found at the whisker surface. 7 references.

  16. Mueller matrix differential decomposition.

    Science.gov (United States)

    Ortega-Quijano, Noé; Arce-Diego, José Luis

    2011-05-15

    We present a Mueller matrix decomposition based on the differential formulation of the Mueller calculus. The differential Mueller matrix is obtained from the macroscopic matrix through an eigenanalysis. It is subsequently resolved into the complete set of 16 differential matrices that correspond to the basic types of optical behavior for depolarizing anisotropic media. The method is successfully applied to the polarimetric analysis of several samples. The differential parameters enable one to perform an exhaustive characterization of anisotropy and depolarization. This decomposition is particularly appropriate for studying media in which several polarization effects take place simultaneously. © 2011 Optical Society of America

  17. Matrix proteoglycans as effector molecules for epithelial cell function

    Directory of Open Access Journals (Sweden)

    C. W. Frevert

    2005-12-01

    Full Text Available Matrix proteoglycans are complex molecules composed of a core protein and glycosaminoglycan side chains. Once thought to be the molecular glue providing structural support and imparting biomechanical properties to lung tissue, it is now apparent that proteoglycans are important biological modifiers which regulate processes such as lung development, homeostasis, inflammation and wound healing. The diverse roles of proteoglycans in the extracellular matrix suggest that these molecules play a critical role in normal and diseased lungs. This short article will discuss the role extracellular matrix proteoglycans play in regulating epithelial cell function in the lungs.

  18. A multiverse play divides opinion

    Science.gov (United States)

    Crease, Robert P.

    2015-03-01

    The stage lights rise. A man and woman meet in a cute way - "Do you know why it's impossible to lick the tips of your elbows?" she asks - they chat momentarily, and separate. The play is Constellations by Nick Payne.

  19. Play the Blood Typing Game

    Science.gov (United States)

    ... Nobel's Life and Work Teachers' Questionnaire The Blood Typing Game What happens if you get a blood ... learn about human blood types! Play the Blood Typing Game About this game Embed the Blood Typing ...

  20. Discussion of "interpretation and play".

    Science.gov (United States)

    Pick, Irma Brenman

    2011-01-01

    This discussion addresses the conflict in technique between play versus interpretation. It further considers how the nature of the interpretation may be affected by a consideration of what is being projected into the analyst.

  1. THE VALUE OF ROLE PLAY

    Institute of Scientific and Technical Information of China (English)

    1996-01-01

    IntroductionIn China,the English as a foreign language (EFL) class for non-English majors at college levelprovides little opportunity for oral interaction among students.One solution to this problem is toadopt a series of communicative teaching techniques.Role play is one such technique.This paperattempts to assess the value of role play by analysing our experience of using it as a communicationactivity.

  2. Digital Play: A New Classification

    Science.gov (United States)

    Marsh, Jackie; Plowman, Lydia; Yamada-Rice, Dylan; Bishop, Julia; Scott, Fiona

    2016-01-01

    This paper draws on an ESRC-funded study of play and creativity in preschool-aged children's use of apps in the UK. The main objectives of the study were to collect information about access to and use of apps in the home, establish the most popular apps and identify the features of those apps that are successful in promoting play and creativity. A…

  3. Pesticide-Exposure Matrix

    Science.gov (United States)

    The "Pesticide-exposure Matrix" was developed to help epidemiologists and other researchers identify the active ingredients to which people were likely exposed when their homes and gardens were treated for pests in past years.

  4. Matrix theory of gravitation

    CERN Document Server

    Koehler, Wolfgang

    2011-01-01

    A new classical theory of gravitation within the framework of general relativity is presented. It is based on a matrix formulation of four-dimensional Riemann-spaces and uses no artificial fields or adjustable parameters. The geometrical stress-energy tensor is derived from a matrix-trace Lagrangian, which is not equivalent to the curvature scalar R. To enable a direct comparison with the Einstein-theory a tetrad formalism is utilized, which shows similarities to teleparallel gravitation theories, but uses complex tetrads. Matrix theory might solve a 27-year-old, fundamental problem of those theories (sec. 4.1). For the standard test cases (PPN scheme, Schwarzschild-solution) no differences to the Einstein-theory are found. However, the matrix theory exhibits novel, interesting vacuum solutions.

  5. Matrix comparison, Part 2

    DEFF Research Database (Denmark)

    Schneider, Jesper Wiborg; Borlund, Pia

    2007-01-01

    The present two-part article introduces matrix comparison as a formal means for evaluation purposes in informetric studies such as cocitation analysis. In the first part, the motivation behind introducing matrix comparison to informetric studies, as well as two important issues influencing...... such comparisons, matrix generation, and the composition of proximity measures, are introduced and discussed. In this second part, the authors introduce and thoroughly demonstrate two related matrix comparison techniques the Mantel test and Procrustes analysis, respectively. These techniques can compare...... important. Alternatively, or as a supplement, Procrustes analysis compares the actual ordination results without investigating the underlying proximity measures, by matching two configurations of the same objects in a multidimensional space. An advantage of the Procrustes analysis though, is the graphical...

  6. The Matrix Organization Revisited

    DEFF Research Database (Denmark)

    Gattiker, Urs E.; Ulhøi, John Parm

    1999-01-01

    This paper gives a short overview of matrix structure and technology management. It outlines some of the characteristics and also points out that many organizations may actualy be hybrids (i.e. mix several ways of organizing to allocate resorces effectively).......This paper gives a short overview of matrix structure and technology management. It outlines some of the characteristics and also points out that many organizations may actualy be hybrids (i.e. mix several ways of organizing to allocate resorces effectively)....

  7. Optical Coherency Matrix Tomography

    Science.gov (United States)

    2015-10-19

    optics has been studied theoretically11, but has not been demonstrated experimentally heretofore. Even in the simplest case of two binary DoFs6 (e.g...coherency matrix G spanning these DoFs. This optical coherency matrix has not been measured in its entirety to date—even in the simplest case of two...dense coding, etc. CREOL, The College of Optics & Photonics, University of Central Florida, Orlando , Florida 32816, USA. Correspondence and requests

  8. Matrix fractional systems

    Science.gov (United States)

    Tenreiro Machado, J. A.

    2015-08-01

    This paper addresses the matrix representation of dynamical systems in the perspective of fractional calculus. Fractional elements and fractional systems are interpreted under the light of the classical Cole-Cole, Davidson-Cole, and Havriliak-Negami heuristic models. Numerical simulations for an electrical circuit enlighten the results for matrix based models and high fractional orders. The conclusions clarify the distinction between fractional elements and fractional systems.

  9. Hacking the Matrix.

    Science.gov (United States)

    Czerwinski, Michael; Spence, Jason R

    2017-01-05

    Recently in Nature, Gjorevski et al. (2016) describe a fully defined synthetic hydrogel that mimics the extracellular matrix to support in vitro growth of intestinal stem cells and organoids. The hydrogel allows exquisite control over the chemical and physical in vitro niche and enables identification of regulatory properties of the matrix. Copyright © 2017 Elsevier Inc. All rights reserved.

  10. The Matrix Organization Revisited

    DEFF Research Database (Denmark)

    Gattiker, Urs E.; Ulhøi, John Parm

    1999-01-01

    This paper gives a short overview of matrix structure and technology management. It outlines some of the characteristics and also points out that many organizations may actualy be hybrids (i.e. mix several ways of organizing to allocate resorces effectively).......This paper gives a short overview of matrix structure and technology management. It outlines some of the characteristics and also points out that many organizations may actualy be hybrids (i.e. mix several ways of organizing to allocate resorces effectively)....

  11. Play and Space - Towards a Formal Definition of Play

    DEFF Research Database (Denmark)

    Larsen, Lasse Juel

    2015-01-01

    The aim of this article is to present a formal definition of the aspect of play generally known as ‘make-believe’. ‘Make-believe’ is defined in relation to theory of place and Dasein’s being- in-the-world as presented by Martin Heidegger in Being and time. From this point of view ‘make-believe’ can...... be defined as a uniform and situational spatial dyad where being is doubled, characterized by the presence of the physically absent. I will apply this definition after a survey of central and influential aspects of the history of the theory of play to demonstrate its relevance for a formal definition of play....

  12. North African geology: exploration matrix for potential major hydrocarbon discoveries

    Energy Technology Data Exchange (ETDEWEB)

    Kanes, W.H.; O' Connor, T.E.

    1985-02-01

    Based on results and models presented previously, it is possible to consider an exploration matrix that examines the 5 basic exploration parameters: source, reservoir, timing, structure, and seal. This matrix indicates that even those basins that have had marginal exploration successes, including the Paleozoic megabasin and downfaulted Triassic grabens of Morocco, the Cyrenaican platform of Libya, and the Tunisia-Sicily shelf, have untested plays. The exploration matrix also suggests these high-risk areas could change significantly, if one of the 5 basic matrix parameters is upgraded or if adjustments in political or financial risk are made. The Sirte basin and the Gulf of Suez, 2 of the more intensely explored areas, also present attractive matrix prospects, particularly with deeper Nubian beds or with the very shallow Tertiary sections. The Ghadames basin of Libya and Tunisia shows some potential, but its evaluation responds strongly to stratigraphic and external nongeologic matrix variations based on degree of risk exposure to be assumed. Of greatest risk in the matrix are the very deep Moroccan Paleozoic clastic plays and the Jurassic of Sinai. However, recent discoveries may upgrade these untested frontier areas. Based on the matrix generated by the data presented at a North African Petroleum Geology symposium, significant hydrocarbon accumulations are yet to be found. The remaining questions are: where in the matrix does each individual company wish to place its exploration capital and how much should be the risk exposure.

  13. Dentin matrix degradation by host Matrix Metalloproteinases: inhibition and clinical perspectives towards regeneration.

    Directory of Open Access Journals (Sweden)

    Catherine eChaussain

    2013-11-01

    Full Text Available Bacterial enzymes have long been considered solely accountable for the degradation of the dentin matrix during the carious process. However, the emerging literature suggests that host-derived enzymes, and in particular the matrix metalloproteinases (MMPs contained in dentin and saliva can play a major role in this process by their ability to degrade the dentin matrix from within. These findings are important since they open new therapeutic options for caries prevention and treatment. The possibility of using MMP inhibitors to interfere with dentin caries progression is discussed. Furthermore, the potential release of bioactive peptides by the enzymatic cleavage of dentin matrix proteins by MMPs during the carious process is discussed. These peptides, once identified, may constitute promising therapeutical tools for tooth and bone regeneration.

  14. Adaptive Forgetting Factor Fictitious Play

    CERN Document Server

    Smyrnakis, Michalis

    2011-01-01

    It is now well known that decentralised optimisation can be formulated as a potential game, and game-theoretical learning algorithms can be used to find an optimum. One of the most common learning techniques in game theory is fictitious play. However fictitious play is founded on an implicit assumption that opponents' strategies are stationary. We present a novel variation of fictitious play that allows the use of a more realistic model of opponent strategy. It uses a heuristic approach, from the online streaming data literature, to adaptively update the weights assigned to recently observed actions. We compare the results of the proposed algorithm with those of stochastic and geometric fictitious play in a simple strategic form game, a vehicle target assignment game and a disaster management problem. In all the tests the rate of convergence of the proposed algorithm was similar or better than the variations of fictitious play we compared it with. The new algorithm therefore improves the performance of game-t...

  15. Why Play Outside? Problematising Outdoor Play as a Biopedagogical Task

    Science.gov (United States)

    Robinson, Daniel B.; Barrett, Joe

    2017-01-01

    Although outdoor play has been widely recognised for the many benefits it affords children, some have rationalised the need for it based on goals related to physical health. More specifically, these instrumental goals have been closely related to obesity, overweight, and/or physical (in)activity. Adhering to obesity discourses and the notion of a…

  16. Parent-Child Play across Cultures: Advancing Play Research

    Science.gov (United States)

    Roopnarine, Jaipaul L.; Davidson, Kimberly L.

    2015-01-01

    In this article, the authors argue for a greater understanding of children's play across cultures through better integration of scientific thinking about the developed and developing societies, through consideration of socialization beliefs and goals, and, finally, through the use of more complex models in research investigations. They draw on…

  17. Modular robotics for playful physiotherapy

    DEFF Research Database (Denmark)

    Lund, Henrik Hautop

    2009-01-01

    We developed modular robotic tiles to be used for playful physiotherapy, which is supposed to motivate patients to engage in and perform physical rehabilitation exercises. We tested the modular robotic tiles for an extensive period of time (3 years) in daily use in a hospital rehabilitation unit e.......g. for cardiac patients. Also, the tiles were tested for performing physical rehabilitation of stroke patients in their private home. In all pilot test cases qualitative feedback indicate that the patients find the playful use of modular robotic tiles engaging and motivating for them to perform...... the rehabilitation. Also, initial pilot test data suggest that some playful exercises on the tiles demand an average heart rate of 75% and 86% of the maximum heart rate....

  18. Effect of topical fluoroquinolones on the expression of matrix metalloproteinases in the cornea

    OpenAIRE

    O'Brien Terrence P; Song Jae K; Hakim Melinda A; Reviglio Victor E

    2003-01-01

    Abstract Background Matrix metalloproteinases play an important role in extracellular matrix deposition and degradation. Based on previous clinical observations of corneal perforations during topical fluoroquinolone treatment, we decided to evaluate the comparative effects of various fluoroquinolone eye drops on the expression of matrix metalloproteinases (MMPs) in cornea. Methods Eighty female Lewis rats were divided into two experimental groups: intact and wounded corneal epithelium. Unifor...

  19. Rapport. Play and Learn Innovation

    DEFF Research Database (Denmark)

    Larsen, Maria Neumann; Søgaard, Karoline

    Erfaringer og anbefalinger fra innovationsprojektet Play and Learn, hvor pædagoger har arbejdet med sprogstimulering af børn fra 3-9 år. Legende læring i daglige rutiner og pædagogiske aktiviteter har været fokuspunktet.......Erfaringer og anbefalinger fra innovationsprojektet Play and Learn, hvor pædagoger har arbejdet med sprogstimulering af børn fra 3-9 år. Legende læring i daglige rutiner og pædagogiske aktiviteter har været fokuspunktet....

  20. The Non-linear Trajectory of Change in Play Profiles of Three Children in Psychodynamic Play Therapy

    Science.gov (United States)

    Halfon, Sibel; Çavdar, Alev; Orsucci, Franco; Schiepek, Gunter K.; Andreassi, Silvia; Giuliani, Alessandro; de Felice, Giulio

    2016-01-01

    Aim: Even though there is substantial evidence that play based therapies produce significant change, the specific play processes in treatment remain unexamined. For that purpose, processes of change in long-term psychodynamic play therapy are assessed through a repeated systematic assessment of three children’s “play profiles,” which reflect patterns of organization among play variables that contribute to play activity in therapy, indicative of the children’s coping strategies, and an expression of their internal world. The main aims of the study are to investigate the kinds of play profiles expressed in treatment, and to test whether there is emergence of new and more adaptive play profiles using dynamic systems theory as a methodological framework. Methods and Procedures: Each session from the long-term psychodynamic treatment (mean number of sessions = 55) of three 6-year-old good outcome cases presenting with Separation Anxiety were recorded, transcribed and coded using items from the Children’s Play Therapy Instrument (CPTI), created to assess the play activity of children in psychotherapy, generating discrete and measurable units of play activity arranged along a continuum of four play profiles: “Adaptive,” “Inhibited,” “Impulsive,” and “Disorganized.” The play profiles were clustered through K-means Algorithm, generating seven discrete states characterizing the course of treatment and the transitions between these states were analyzed by Markov Transition Matrix, Recurrence Quantification Analysis (RQA) and odds ratios comparing the first and second halves of psychotherapy. Results: The Markov Transitions between the states scaled almost perfectly and also showed the ergodicity of the system, meaning that the child can reach any state or shift to another one in play. The RQA and odds ratios showed two trends of change, first concerning the decrease in the use of “less adaptive” strategies, second regarding the reduction of play

  1. Matrix Information Geometry

    CERN Document Server

    Bhatia, Rajendra

    2013-01-01

    This book is an outcome of the Indo-French Workshop on Matrix Information Geometries (MIG): Applications in Sensor and Cognitive Systems Engineering, which was held in Ecole Polytechnique and Thales Research and Technology Center, Palaiseau, France, in February 23-25, 2011. The workshop was generously funded by the Indo-French Centre for the Promotion of Advanced Research (IFCPAR).  During the event, 22 renowned invited french or indian speakers gave lectures on their areas of expertise within the field of matrix analysis or processing. From these talks, a total of 17 original contribution or state-of-the-art chapters have been assembled in this volume. All articles were thoroughly peer-reviewed and improved, according to the suggestions of the international referees. The 17 contributions presented  are organized in three parts: (1) State-of-the-art surveys & original matrix theory work, (2) Advanced matrix theory for radar processing, and (3) Matrix-based signal processing applications.  

  2. Matrix metalloproteinases (MMPs) and trophoblast invasion

    Institute of Scientific and Technical Information of China (English)

    LI Jing; ZHAO Tianfu; DUAN Enkui

    2005-01-01

    MMPs and their natural tissue inhibitors TIMPs are crucial in coordinated breakdown and remodeling of the extracellular matrix (ECM) in physiological and pathological situations. Placentation is a key event of pregnancy in which MMPs/TIMPs system plays important roles in regulating the extravillus cytotrophoblast (EVTs) invasion. This paper focuses on expression patterns and regulatory mechanisms of MMPs/TIMPs family members during the process of placentation. Their implications in curing pregnancy-related diseases are also discussed.

  3. Let's 'play' with molecular pharmacology.

    Science.gov (United States)

    Choudhury, Supriyo; Pradhan, Richeek; Sengupta, Gairik; Das, Manisha; Chatterjee, Manojit; Roy, Ranendra Kumar; Chatterjee, Suparna

    2015-01-01

    Understanding concepts of molecular mechanisms of drug action involves sequential visualization of physiological processes and drug effects, a task that can be difficult at an undergraduate level. Role-play is a teaching-learning methodology whereby active participation of students as well as clear visualization of the phenomenon is used to convey complex physiological concepts. However, its use in teaching drug action, a process that demands understanding of a second level of complexity over the physiological process, has not been investigated. We hypothesized that role-play can be an effective and well accepted method for teaching molecular pharmacology. In an observational study, students were guided to perform a role-play on a selected topic involving drug activity. Students' gain in knowledge was assessed comparing validated pre- and post-test questionnaires as well as class average normalized gain. The acceptance of role-play among undergraduate medical students was evaluated by Likert scale analysis and thematic analysis of their open-ended written responses. Significant improvement in knowledge (P pharmacology in undergraduate medical curricula.

  4. Playing with Protons CREATIONS Demonstrator

    CERN Document Server

    Alexopoulos, Angelos

    2017-01-01

    This document describes Playing with Protons, a CMS education initiative that seeks to enhance teachers’ pedagogical practice with creative, hands-on methodologies through which 10-12 year old students can, in turn, get engaged effectively with science, technology and innovation.

  5. For the Phenomenology of Play

    Directory of Open Access Journals (Sweden)

    Roberto Farné

    2016-10-01

    Full Text Available The success of phenomenology in contemporary culture is due above all to the new approach to knowledge that has been proposed, breaking with the traditional objectivism of scientific knowledge and placing the “phenomenon” at the centre of the relationship between the subject and the world. Everyday reality, the language of concrete things, have become fully-fledged targets of philosophical thought. While Eugen Fink, student of Husserl, elects the phenomenon of play as the “symbol of the world”, the original interpretation of man’s relation to the world, in Italy Piero Bertolini redefines the scientific basis of pedagogy according to phenomenological categories and places play among the fundamental fields of experience of education. On one hand overcoming the traditional educational instrumentalisation of play, on the other its sterile reduction to a consumer experience, Bertolini brings play back to its authentic dimension in which risk, error, adventure are constituent parts, the “active ingredients” of his pedagogy.

  6. Electronic Instruments -- Played or Used?

    Science.gov (United States)

    Ulveland, Randall Dana

    1998-01-01

    Compares the experience of playing an acoustic instrument to an electronic instrument by analyzing the constant structures and relationships between the experiences. Concludes that students' understanding of the physical experience of making music increases when experiences with acoustic instruments precede their exposure to electronic…

  7. Moral Education through Play Therapy

    Science.gov (United States)

    Mahalle, Salwa; Zakaria, Gamal Abdul Nasir; Nawi, Aliff

    2014-01-01

    This paper will discuss on how sand therapy (as one type of play therapies) can be applied as an additional technique or approach in counseling. The research questions for this study are to see what are the development, challenges faced by the therapist during the sessions given and how sand therapy can aid to the progress of the client. It is a…

  8. Obama Plays Cheerleader for STEM

    Science.gov (United States)

    Robelen, Erik W.

    2010-01-01

    Amid a struggling economy, a raft of foreign-policy headaches, and the tail end of a heated campaign season, President Barack Obama carved out time in his schedule last month to watch students in the State Dining Room demonstrate a solar-powered model car, a water-purification system, and a soccer-playing robot. The science fair was the fifth…

  9. Playing with a digital swing

    DEFF Research Database (Denmark)

    Skovbjerg, Helle Marie

    2017-01-01

    Based on a field study in a kindergarten among children in Denmark, this paper explores playing activities on a digital swing, the SON-X Octavia (SON-X) and its Applause application. SON-X is an interactive sound unit that can be attached to any swing chain. Here, I explore the relationship betwe...

  10. Ceramic Matrix Composites .

    Directory of Open Access Journals (Sweden)

    J. Mukerji

    1993-10-01

    Full Text Available The present state of the knowledge of ceramic-matrix composites have been reviewed. The fracture toughness of present structural ceramics are not enough to permit design of high performance machines with ceramic parts. They also fail by catastrophic brittle fracture. It is generally believed that further improvement of fracture toughness is only possible by making composites of ceramics with ceramic fibre, particulate or platelets. Only ceramic-matrix composites capable of working above 1000 degree centigrade has been dealt with keeping reinforced plastics and metal-reinforced ceramics outside the purview. The author has discussed the basic mechanisms of toughening and fabrication of composites and the difficulties involved. Properties of available fibres and whiskers have been given. The best results obtained so far have been indicated. The limitations of improvement in properties of ceramic-matrix composites have been discussed.

  11. Matrix interdiction problem

    Energy Technology Data Exchange (ETDEWEB)

    Pan, Feng [Los Alamos National Laboratory; Kasiviswanathan, Shiva [Los Alamos National Laboratory

    2010-01-01

    In the matrix interdiction problem, a real-valued matrix and an integer k is given. The objective is to remove k columns such that the sum over all rows of the maximum entry in each row is minimized. This combinatorial problem is closely related to bipartite network interdiction problem which can be applied to prioritize the border checkpoints in order to minimize the probability that an adversary can successfully cross the border. After introducing the matrix interdiction problem, we will prove the problem is NP-hard, and even NP-hard to approximate with an additive n{gamma} factor for a fixed constant {gamma}. We also present an algorithm for this problem that achieves a factor of (n-k) mUltiplicative approximation ratio.

  12. Extracellular matrix structure.

    Science.gov (United States)

    Theocharis, Achilleas D; Skandalis, Spyros S; Gialeli, Chrysostomi; Karamanos, Nikos K

    2016-02-01

    Extracellular matrix (ECM) is a non-cellular three-dimensional macromolecular network composed of collagens, proteoglycans/glycosaminoglycans, elastin, fibronectin, laminins, and several other glycoproteins. Matrix components bind each other as well as cell adhesion receptors forming a complex network into which cells reside in all tissues and organs. Cell surface receptors transduce signals into cells from ECM, which regulate diverse cellular functions, such as survival, growth, migration, and differentiation, and are vital for maintaining normal homeostasis. ECM is a highly dynamic structural network that continuously undergoes remodeling mediated by several matrix-degrading enzymes during normal and pathological conditions. Deregulation of ECM composition and structure is associated with the development and progression of several pathologic conditions. This article emphasizes in the complex ECM structure as to provide a better understanding of its dynamic structural and functional multipotency. Where relevant, the implication of the various families of ECM macromolecules in health and disease is also presented.

  13. Finite Temperature Matrix Theory

    CERN Document Server

    Meana, M L; Peñalba, J P; Meana, Marco Laucelli; Peñalba, Jesús Puente

    1998-01-01

    We present the way the Lorentz invariant canonical partition function for Matrix Theory as a light-cone formulation of M-theory can be computed. We explicitly show how when the eleventh dimension is decompactified, the N=1 eleven dimensional SUGRA partition function appears. From this particular analysis we also clarify the question about the discernibility problem when making statistics with supergravitons (the N! problem) in Matrix black hole configurations. We also provide a high temperature expansion which captures some structure of the canonical partition function when interactions amongst D-particles are on. The connection with the semi-classical computations thermalizing the open superstrings attached to a D-particle is also clarified through a Born-Oppenheimer approximation. Some ideas about how Matrix Theory would describe the complementary degrees of freedom of the massless content of eleven dimensional SUGRA are also discussed.

  14. Matrixed business support comparison study.

    Energy Technology Data Exchange (ETDEWEB)

    Parsons, Josh D.

    2004-11-01

    The Matrixed Business Support Comparison Study reviewed the current matrixed Chief Financial Officer (CFO) division staff models at Sandia National Laboratories. There were two primary drivers of this analysis: (1) the increasing number of financial staff matrixed to mission customers and (2) the desire to further understand the matrix process and the opportunities and challenges it creates.

  15. Play for learning and learning for play: Children’s play in a toddler group

    Directory of Open Access Journals (Sweden)

    Anne Greve

    2013-10-01

    Full Text Available There is a concern that children’s right to play is restricted as a result of the governments’ narrow focus on school preparatory activities and learning. Play and learning are rights embodied in the United Nations convention on the rights of the child. This article discusses how play and learning are organized in the everyday life of a Norwegian toddler group. Critical voices claim that there is not enough structure and that there should be more teaching and mapping to facilitate early intervention in Norwegian kindergartens. The article suggests that the critics’ claim can be countered by asking if there are too few teachers with adequate education and too large groups of children.

  16. IIB Matrix Model

    CERN Document Server

    Aoki, H; Kawai, H; Kitazawa, Y; Tada, T; Tsuchiya, A

    1999-01-01

    We review our proposal for a constructive definition of superstring, type IIB matrix model. The IIB matrix model is a manifestly covariant model for space-time and matter which possesses N=2 supersymmetry in ten dimensions. We refine our arguments to reproduce string perturbation theory based on the loop equations. We emphasize that the space-time is dynamically determined from the eigenvalue distributions of the matrices. We also explain how matter, gauge fields and gravitation appear as fluctuations around dynamically determined space-time.

  17. Little IIB Matrix Model

    CERN Document Server

    Kitazawa, Y; Saito, O; Kitazawa, Yoshihisa; Mizoguchi, Shun'ya; Saito, Osamu

    2006-01-01

    We study the zero-dimensional reduced model of D=6 pure super Yang-Mills theory and argue that the large N limit describes the (2,0) Little String Theory. The one-loop effective action shows that the force exerted between two diagonal blocks of matrices behaves as 1/r^4, implying a six-dimensional spacetime. We also observe that it is due to non-gravitational interactions. We construct wave functions and vertex operators which realize the D=6, (2,0) tensor representation. We also comment on other "little" analogues of the IIB matrix model and Matrix Theory with less supercharges.

  18. Elementary matrix algebra

    CERN Document Server

    Hohn, Franz E

    2012-01-01

    This complete and coherent exposition, complemented by numerous illustrative examples, offers readers a text that can teach by itself. Fully rigorous in its treatment, it offers a mathematically sound sequencing of topics. The work starts with the most basic laws of matrix algebra and progresses to the sweep-out process for obtaining the complete solution of any given system of linear equations - homogeneous or nonhomogeneous - and the role of matrix algebra in the presentation of useful geometric ideas, techniques, and terminology.Other subjects include the complete treatment of the structur

  19. Rheocasting Al Matrix Composites

    Science.gov (United States)

    Girot, F. A.; Albingre, L.; Quenisset, J. M.; Naslain, R.

    1987-11-01

    Aluminum alloy matrix composites reinforced by SiC short fibers (or whiskers) can be prepared by rheocasting, a process which consists of the incorporation and homogeneous distribution of the reinforcement by stirring within a semi-solid alloy. Using this technique, composites containing fiber volume fractions in the range of 8-15%, have been obtained for various fibers lengths (i.e., 1 mm, 3 mm and 6 mm for SiC fibers). This paper attempts to delineate the best compocasting conditions for aluminum matrix composites reinforced by short SiC (e.g Nicalon) or SiC whiskers (e.g., Tokamax) and characterize the resulting microstructures.

  20. Reduced Google matrix

    CERN Document Server

    Frahm, K M

    2016-01-01

    Using parallels with the quantum scattering theory, developed for processes in nuclear and mesoscopic physics and quantum chaos, we construct a reduced Google matrix $G_R$ which describes the properties and interactions of a certain subset of selected nodes belonging to a much larger directed network. The matrix $G_R$ takes into account effective interactions between subset nodes by all their indirect links via the whole network. We argue that this approach gives new possibilities to analyze effective interactions in a group of nodes embedded in a large directed networks. Possible efficient numerical methods for the practical computation of $G_R$ are also described.

  1. Density matrix perturbation theory.

    Science.gov (United States)

    Niklasson, Anders M N; Challacombe, Matt

    2004-05-14

    An orbital-free quantum perturbation theory is proposed. It gives the response of the density matrix upon variation of the Hamiltonian by quadratically convergent recursions based on perturbed projections. The technique allows treatment of embedded quantum subsystems with a computational cost scaling linearly with the size of the perturbed region, O(N(pert.)), and as O(1) with the total system size. The method allows efficient high order perturbation expansions, as demonstrated with an example involving a 10th order expansion. Density matrix analogs of Wigner's 2n+1 rule are also presented.

  2. Complex matrix model duality

    Energy Technology Data Exchange (ETDEWEB)

    Brown, T.W.

    2010-11-15

    The same complex matrix model calculates both tachyon scattering for the c=1 non-critical string at the self-dual radius and certain correlation functions of half-BPS operators in N=4 super- Yang-Mills. It is dual to another complex matrix model where the couplings of the first model are encoded in the Kontsevich-like variables of the second. The duality between the theories is mirrored by the duality of their Feynman diagrams. Analogously to the Hermitian Kontsevich- Penner model, the correlation functions of the second model can be written as sums over discrete points in subspaces of the moduli space of punctured Riemann surfaces. (orig.)

  3. Agents Play Mix-game

    CERN Document Server

    Gou, C

    2005-01-01

    In mix-game which is an extension of minority game, there are two groups of agents; group1 plays the majority game, but the group2 plays the minority game. This paper studies the change of the average winnings of agents and volatilities vs. the change of mixture of agents in mix-game model. It finds that the correlations between the average winnings of agents and the mean of local volatilities are different with different combinations of agent memory length when the proportion of agents in group 1 increases. This study result suggests that memory length of agents in group1 be smaller than that of agent in group2 when mix-game model is used to simulate the financial markets.

  4. Dynamic Matrix Rank

    DEFF Research Database (Denmark)

    Frandsen, Gudmund Skovbjerg; Frandsen, Peter Frands

    2009-01-01

    We consider maintaining information about the rank of a matrix under changes of the entries. For n×n matrices, we show an upper bound of O(n1.575) arithmetic operations and a lower bound of Ω(n) arithmetic operations per element change. The upper bound is valid when changing up to O(n0.575) entri...... closed fields. The upper bound for element updates uses fast rectangular matrix multiplication, and the lower bound involves further development of an earlier technique for proving lower bounds for dynamic computation of rational functions.......We consider maintaining information about the rank of a matrix under changes of the entries. For n×n matrices, we show an upper bound of O(n1.575) arithmetic operations and a lower bound of Ω(n) arithmetic operations per element change. The upper bound is valid when changing up to O(n0.575) entries...... in a single column of the matrix. We also give an algorithm that maintains the rank using O(n2) arithmetic operations per rank one update. These bounds appear to be the first nontrivial bounds for the problem. The upper bounds are valid for arbitrary fields, whereas the lower bound is valid for algebraically...

  5. Empirical codon substitution matrix

    Directory of Open Access Journals (Sweden)

    Gonnet Gaston H

    2005-06-01

    Full Text Available Abstract Background Codon substitution probabilities are used in many types of molecular evolution studies such as determining Ka/Ks ratios, creating ancestral DNA sequences or aligning coding DNA. Until the recent dramatic increase in genomic data enabled construction of empirical matrices, researchers relied on parameterized models of codon evolution. Here we present the first empirical codon substitution matrix entirely built from alignments of coding sequences from vertebrate DNA and thus provide an alternative to parameterized models of codon evolution. Results A set of 17,502 alignments of orthologous sequences from five vertebrate genomes yielded 8.3 million aligned codons from which the number of substitutions between codons were counted. From this data, both a probability matrix and a matrix of similarity scores were computed. They are 64 × 64 matrices describing the substitutions between all codons. Substitutions from sense codons to stop codons are not considered, resulting in block diagonal matrices consisting of 61 × 61 entries for the sense codons and 3 × 3 entries for the stop codons. Conclusion The amount of genomic data currently available allowed for the construction of an empirical codon substitution matrix. However, more sequence data is still needed to construct matrices from different subsets of DNA, specific to kingdoms, evolutionary distance or different amount of synonymous change. Codon mutation matrices have advantages for alignments up to medium evolutionary distances and for usages that require DNA such as ancestral reconstruction of DNA sequences and the calculation of Ka/Ks ratios.

  6. Matrix Embedded Organic Synthesis

    Science.gov (United States)

    Kamakolanu, U. G.; Freund, F. T.

    2016-05-01

    In the matrix of minerals such as olivine, a redox reaction of the low-z elements occurs. Oxygen is oxidized to the peroxy state while the low-Z-elements become chemically reduced. We assign them a formula [CxHyOzNiSj]n- and call them proto-organics.

  7. Playing Business "Ball" with Cuba

    Institute of Scientific and Technical Information of China (English)

    Yang Wei; Gong Liming

    2007-01-01

    @@ If you were lucky enough to have seen the World Volleyball Tournament,you must have seen the Cuban Women's volleyball team take on China in the championship game,a game of which Cuba has become the world champion for 10 times.The great determination and strong tenacity of these young Cuban girls' has been an encouragement to everyone that watches them play.

  8. Playing Moderately Hard to Get

    Directory of Open Access Journals (Sweden)

    Stephen Reysen

    2013-12-01

    Full Text Available In two studies, we examined the effect of different degrees of attraction reciprocation on ratings of attraction toward a potential romantic partner. Undergraduate college student participants imagined a potential romantic partner who reciprocated a low (reciprocating attraction one day a week, moderate (reciprocating attraction three days a week, high (reciprocating attraction five days a week, or unspecified degree of attraction (no mention of reciprocation. Participants then rated their degree of attraction toward the potential partner. The results of Study 1 provided only partial support for Brehm’s emotion intensity theory. However, after revising the high reciprocation condition vignette in Study 2, supporting Brehm’s emotion intensity theory, results show that a potential partners’ display of reciprocation of attraction acted as a deterrent to participants’ intensity of experienced attraction to the potential partner. The results support the notion that playing moderately hard to get elicits more intense feelings of attraction from potential suitors than playing too easy or too hard to get. Discussion of previous research examining playing hard to get is also re-examined through an emotion intensity theory theoretical lens.

  9. Jakob Kelemina on Shakespeare's plays

    Directory of Open Access Journals (Sweden)

    Mirko Jurak

    2007-12-01

    Full Text Available Among Slovene scholars in English and German studies Jakob Kelemina (19 July 1882- 14 May 1957 has a very important  place. Janez Stanonik justly places him among the founding fathers of the University of Ljubljana (Stanonik 1966: 332. From 1920 Kelemina was professor of Germanic philology and between 1920 and 1957 he was also the Chair of the Deparment ofGermanic Languages and Literatures at the Faculty of Arts of this university. The major part of Kelemina's research was devoted to German and Austrian literatures,  German  philology, German-Slovene cultural relations, and literary theory; his work in these fields has already been discussed  by severa! Slovene scholars. However, in the first two decades of the twentieth century Kelemina also wrote severa! book reviews of Slovene and Croatian translations of Shakespeare's plays as well as three introductory essays to Slovene translations  of Shakespeare's plays. They are considered  as the first serious studies on Shakespeare in Slovenia (Moravec 1974: 437, and have not been analysed yet. Therefore this topic presents the core of my study, together with an evaluation  of Kelemina's contribution  to Slovene translations  of Shakespeare's plays done by Oton Župančič (1878-1949 during the first half of the twentieth century. Župančič's translations  became the criterion  for all further translations  of Shakespeare's dramatic works in Slovene. Župančič is stili one of our most important  poets and translators of this time and Kelemina's advice and criticism undoubtedly  also helped him to achieve such a high standard in his translations. In the central part of my study I also include some new material (e.g. Kelernina's letters, which is relevant for our understanding  of his co-operation with Oton Župančič  and other Slovene authors and critics. In order to put Kelemina's work into a historical perspective I present at the beginning of my study a brief survey of the

  10. Playing Children Adorn Ancient Porcelain

    Institute of Scientific and Technical Information of China (English)

    1995-01-01

    Porcelain is one of China’s greatest achievernents. It appeared during the Eastern Han Dynasty (25-220) and developed into three types of blue porcelain, white porcelain and colored porcelain between the Tang and Song dynasties. From the time of the Ming Dynasty (1368-1644), porcelain-making evolved, glazes and colors improved and porcelain was sold overseas. The quaint shapes and colorfully deslgned porcelain of the Ming Dynasty showed the appeal of folklife, but it was mainly used in the palace. Shown here are some pieces decorated with children at play. From these artifacts we can get an idea of the hairstyles, dress and architecture of that time.

  11. How to play Reverse Hex

    DEFF Research Database (Denmark)

    Toft, Bjarne; Hayward, Ryan B.; Henderson, Philip

    2012-01-01

    We present new results on how to play Reverse Hex, also known as Rex, or Misère Hex, on n × n boards. We give new proofs – and strengthened versions – of Lagarias and Sleator’s theorem (for n × n boards, each player can prolong the game until the board is full, so the first/second player can always......, we find second-player winning replies. Finally, in response to comments by Martin Gardner, for each n ≤ 5, we give a simple winning strategy for the n × n board....

  12. Supervising the uncanny: the play within the play.

    Science.gov (United States)

    Leader, Carol

    2015-11-01

    The writer offers a combined experience in analysis and the performing arts to explore uncanny aspects of the unconscious subtext of the patient's inner drama; subtext which can remain hidden from view in supervision. Freud and Jung's understanding of uncanny experience is considered together with a painting from medieval alchemy and Matte Blanco's conceptions concerning the symmetrical nature of unconscious process. Theatre and the work of the theatre director and actor in approaching the multidimensional aspects of a play are then introduced. Finally clinical case material from group supervision demonstrates how the 'theatre of therapy' and the work of the supervisory couple and group promote the emergence of a more authentic conscious asymmetrical response to the patient's 'script' that can break the 'spell' of the transference/countertransference relationship. This in turn brings meaning to the underlying and implicit 'stage directions' that the patient has been unconsciously communicating. © 2015, The Society of Analytical Psychology.

  13. Playing Games with Quantum Mechanics

    CERN Document Server

    Phoenix, Simon J D

    2012-01-01

    We present a perspective on quantum games that focuses on the physical aspects of the quantities that are used to implement a game. If a game is to be played, it has to be played with objects and actions that have some physical existence. We call such games playable. By focusing on the notion of playability for games we can more clearly see the distinction between classical and quantum games and tackle the thorny issue of what it means to quantize a game. The approach we take can more properly be thought of as gaming the quantum rather than quantizing a game and we find that in this perspective we can think of a complete quantum game, for a given set of preferences, as representing a single family of quantum games with many different playable versions. The versions of Quantum Prisoners Dilemma presented in the literature can therefore be thought of specific instances of the single family of Quantum Prisoner's Dilemma with respect to a particular measurement. The conditions for equilibrium are given for playab...

  14. Matrix string theory

    Science.gov (United States)

    Dijkgraaf, Robbert; Verlinde, Erik; Verlinde, Herman

    1997-02-01

    Via compactification on a circle, the matrix mode] of M-theory proposed by Banks et a]. suggests a concrete identification between the large N limit of two-dimensional N = 8 supersymmetric Yang-Mills theory and type IIA string theory. In this paper we collect evidence that supports this identification. We explicitly identify the perturbative string states and their interactions, and describe the appearance of D-particle and D-membrane states.

  15. Matrix string theory

    Energy Technology Data Exchange (ETDEWEB)

    Dijkgraaf, R. [Amsterdam Univ. (Netherlands). Dept. of Mathematics; Verlinde, E. [TH-Division, CERN, CH-1211 Geneva 23 (Switzerland)]|[Institute for Theoretical Physics, Universtity of Utrecht, 3508 TA Utrecht (Netherlands); Verlinde, H. [Institute for Theoretical Physics, University of Amsterdam, 1018 XE Amsterdam (Netherlands)

    1997-09-01

    Via compactification on a circle, the matrix model of M-theory proposed by Banks et al. suggests a concrete identification between the large N limit of two-dimensional N=8 supersymmetric Yang-Mills theory and type IIA string theory. In this paper we collect evidence that supports this identification. We explicitly identify the perturbative string states and their interactions, and describe the appearance of D-particle and D-membrane states. (orig.).

  16. Matrix String Theory

    CERN Document Server

    Dijkgraaf, R; Verlinde, Herman L

    1997-01-01

    Via compactification on a circle, the matrix model of M-theory proposed by Banks et al suggests a concrete identification between the large N limit of two-dimensional N=8 supersymmetric Yang-Mills theory and type IIA string theory. In this paper we collect evidence that supports this identification. We explicitly identify the perturbative string states and their interactions, and describe the appearance of D-particle and D-membrane states.

  17. Holomorphic matrix integrals

    CERN Document Server

    Felder, G; Felder, Giovanni; Riser, Roman

    2004-01-01

    We study a class of holomorphic matrix models. The integrals are taken over middle dimensional cycles in the space of complex square matrices. As the size of the matrices tends to infinity, the distribution of eigenvalues is given by a measure with support on a collection of arcs in the complex planes. We show that the arcs are level sets of the imaginary part of a hyperelliptic integral connecting branch points.

  18. Zeta Potential and Rheological Behavior of ULC Castables Matrix

    Institute of Scientific and Technical Information of China (English)

    XU Yuanchao; WANG Zhanmin; CAO Xiying

    2008-01-01

    Effects of starting materials and four dispersants (STP, SHP, FDN and FS60) on Zeta potential and rheological behavior of alumina based ULC castables matrix were investigated. The results show that: characteristics of silica fume and alumina cements play a very important role in Zeta potential and viscosity of suspensions of the castables matrix; the dispersants STP and SHP can change Zeta potential values of the matrix suspensions remarkably; the four dispersants can effectively improve the rheological properties of matrix suspensions. For the point of lower viscosity of the matrix suspensions, the suitable additions of the three dispersants (SHP, FDN and FS60) are about 0.2% while that of STP is about 0.3%.

  19. Matrix groups for undergraduates

    CERN Document Server

    Tapp, Kristopher

    2016-01-01

    Matrix groups touch an enormous spectrum of the mathematical arena. This textbook brings them into the undergraduate curriculum. It makes an excellent one-semester course for students familiar with linear and abstract algebra and prepares them for a graduate course on Lie groups. Matrix Groups for Undergraduates is concrete and example-driven, with geometric motivation and rigorous proofs. The story begins and ends with the rotations of a globe. In between, the author combines rigor and intuition to describe the basic objects of Lie theory: Lie algebras, matrix exponentiation, Lie brackets, maximal tori, homogeneous spaces, and roots. This second edition includes two new chapters that allow for an easier transition to the general theory of Lie groups. From reviews of the First Edition: This book could be used as an excellent textbook for a one semester course at university and it will prepare students for a graduate course on Lie groups, Lie algebras, etc. … The book combines an intuitive style of writing w...

  20. Metal matrix Composites

    Directory of Open Access Journals (Sweden)

    Pradeep K. Rohatgi

    1993-10-01

    Full Text Available This paper reviews the world wide upsurge in metal matrix composite research and development activities with particular emphasis on cast metal-matrix particulate composites. Extensive applications of cast aluminium alloy MMCs in day-to-day use in transportation as well as durable good industries are expected to advance rapidly in the next decade. The potential for extensive application of cast composites is very large in India, especially in the areas of transportation, energy and electromechanical machinery; the extensive use of composites can lead to large savings in materials and energy, and in several instances, reduce environmental pollution. It is important that engineering education and short-term courses be organized to bring MMCs to the attention of students and engineering industry leaders. India already has excellent infrastructure for development of composites, and has a long track record of world class research in cast metal matrix particulate composites. It is now necessary to catalyze prototype and regular production of selected composite components, and get them used in different sectors, especially railways, cars, trucks, buses, scooters and other electromechanical machinery. This will require suitable policies backed up by funding to bring together the first rate talent in cast composites which already exists in India, to form viable development groups followed by setting up of production plants involving the process engineering capability already available within the country. On the longer term, cast composites should be developed for use in energy generation equipment, electronic packaging aerospace systems, and smart structures.

  1. Matrix identity and tractional forces influence indirect cardiac reprogramming

    Science.gov (United States)

    Kong, Yen P.; Carrion, Bita; Singh, Rahul K.; Putnam, Andrew J.

    2013-12-01

    Heart regeneration through in vivo cardiac reprogramming has been demonstrated as a possible regenerative strategy. While it has been reported that cardiac reprogramming in vivo is more efficient than in vitro, the influence of the extracellular microenvironment on cardiac reprogramming remains incompletely understood. This understanding is necessary to improve the efficiency of cardiac reprogramming in order to implement this strategy successfully. Here we have identified matrix identity and cell-generated tractional forces as key determinants of the dedifferentiation and differentiation stages during reprogramming. Cell proliferation, matrix mechanics, and matrix microstructure are also important, but play lesser roles. Our results suggest that the extracellular microenvironment can be optimized to enhance cardiac reprogramming.

  2. Matrix Theory of Small Oscillations

    Science.gov (United States)

    Chavda, L. K.

    1978-01-01

    A complete matrix formulation of the theory of small oscillations is presented. Simple analytic solutions involving matrix functions are found which clearly exhibit the transients, the damping factors, the Breit-Wigner form for resonances, etc. (BB)

  3. Play behaviours and play object preferences of young children with autistic disorder in a clinical play environment.

    Science.gov (United States)

    Dominguez, Anna; Ziviani, Jenny; Rodger, Sylvia

    2006-01-01

    Play is the primary occupation of childhood and provides a potentially powerful means of assessing and treating children with autistic disorder. This study utilized a cross-sectional comparison design to investigate the nature of play engagement in children with AD (n = 24), relative to typically developing children (n = 34) matched for chronological age. Play behaviours were recorded in a clinical play environment. Videotapes comprising 15 minutes of the children's spontaneous play behaviour were analysed using time-interval analysis. The particular play behaviours observed and play objects used were coded. Differences in play behaviours (p motivation.

  4. Hand kinematics of piano playing.

    Science.gov (United States)

    Furuya, Shinichi; Flanders, Martha; Soechting, John F

    2011-12-01

    Dexterous use of the hand represents a sophisticated sensorimotor function. In behaviors such as playing the piano, it can involve strong temporal and spatial constraints. The purpose of this study was to determine fundamental patterns of covariation of motion across joints and digits of the human hand. Joint motion was recorded while 5 expert pianists played 30 excerpts from musical pieces, which featured ∼50 different tone sequences and fingering. Principal component analysis and cluster analysis using an expectation-maximization algorithm revealed that joint velocities could be categorized into several patterns, which help to simplify the description of the movements of the multiple degrees of freedom of the hand. For the thumb keystroke, two distinct patterns of joint movement covariation emerged and they depended on the spatiotemporal patterns of the task. For example, the thumb-under maneuver was clearly separated into two clusters based on the direction of hand translation along the keyboard. While the pattern of the thumb joint velocities differed between these clusters, the motions at the metacarpo-phalangeal and proximal-phalangeal joints of the four fingers were more consistent. For a keystroke executed with one of the fingers, there were three distinct patterns of joint rotations, across which motion at the striking finger was fairly consistent, but motion of the other fingers was more variable. Furthermore, the amount of movement spillover of the striking finger to the adjacent fingers was small irrespective of the finger used for the keystroke. These findings describe an unparalleled amount of independent motion of the fingers.

  5. Matrix Completions and Chordal Graphs

    Institute of Scientific and Technical Information of China (English)

    Kenneth John HARRISON

    2003-01-01

    In a matrix-completion problem the aim is to specifiy the missing entries of a matrix inorder to produce a matrix with particular properties. In this paper we survey results concerning matrix-completion problems where we look for completions of various types for partial matrices supported ona given pattern. We see that thc existence of completions of the required type often depends on thechordal properties of graphs associated with the pattern.

  6. Determination of Matrix Pore Size Distribution in Fractured Clayey Till and Assessment of Matrix Migration of Dechlorinationg Bacteria

    DEFF Research Database (Denmark)

    Cong, Lu; Broholm, Mette Martina; Fabricius, Ida Lykke

    2014-01-01

    The pore structure and pore size distribution (PSD) in the clayey till matrix from three Danish field sites were investigated by image analysis to assess the matrix migration of dechlorinating bacteria in clayey till. Clayey till samples had a wide range of pore sizes, with diameters of 0.1–100 μm...... account for approximately 30–60% of the total porosity (20–26%), which is within the range of those reported for clayey soils and other clayey deposits in the literature. The pore size, PSD, and interconnectivity of pores in clayey till matrix may play an important role in evaluation of the migration...

  7. THE GENERALIZED POLARIZATION SCATTERING MATRIX

    Science.gov (United States)

    the Least Square Best Estimate of the Generalized Polarization matrix from a set of measurements is then developed. It is shown that the Faraday...matrix data. It is then shown that the Least Square Best Estimate of the orientation angle of a symmetric target is also determinable from Faraday rotation contaminated short pulse monostatic polarization matrix data.

  8. Effect of precipitate-matrix interface sinks on the growth of voids in the matrix

    Energy Technology Data Exchange (ETDEWEB)

    Brailsford, A.D.; Mansur, L.K.

    1981-01-01

    A qualitative discussion of the differing roles played by coherent and incoherent precipitates as point defect sinks is presented. Rate theory is used to obtain semiquantitative estimates of the growth of cavities in the matrix when either type of precipitate is present. Methods for deriving the sink strengths of precipitates of arbitrary shape are developed. In three materials where available microstructural information allows an analysis, precipitates are found to cause only a small relative suppression of cavity growth via the mechanisms here considered.

  9. Social patterns revealed through random matrix theory

    Science.gov (United States)

    Sarkar, Camellia; Jalan, Sarika

    2014-11-01

    Despite the tremendous advancements in the field of network theory, very few studies have taken weights in the interactions into consideration that emerge naturally in all real-world systems. Using random matrix analysis of a weighted social network, we demonstrate the profound impact of weights in interactions on emerging structural properties. The analysis reveals that randomness existing in particular time frame affects the decisions of individuals rendering them more freedom of choice in situations of financial security. While the structural organization of networks remains the same throughout all datasets, random matrix theory provides insight into the interaction pattern of individuals of the society in situations of crisis. It has also been contemplated that individual accountability in terms of weighted interactions remains as a key to success unless segregation of tasks comes into play.

  10. The cellulose resource matrix.

    Science.gov (United States)

    Keijsers, Edwin R P; Yılmaz, Gülden; van Dam, Jan E G

    2013-03-01

    The emerging biobased economy is causing shifts from mineral fossil oil based resources towards renewable resources. Because of market mechanisms, current and new industries utilising renewable commodities, will attempt to secure their supply of resources. Cellulose is among these commodities, where large scale competition can be expected and already is observed for the traditional industries such as the paper industry. Cellulose and lignocellulosic raw materials (like wood and non-wood fibre crops) are being utilised in many industrial sectors. Due to the initiated transition towards biobased economy, these raw materials are intensively investigated also for new applications such as 2nd generation biofuels and 'green' chemicals and materials production (Clark, 2007; Lange, 2007; Petrus & Noordermeer, 2006; Ragauskas et al., 2006; Regalbuto, 2009). As lignocellulosic raw materials are available in variable quantities and qualities, unnecessary competition can be avoided via the choice of suitable raw materials for a target application. For example, utilisation of cellulose as carbohydrate source for ethanol production (Kabir Kazi et al., 2010) avoids the discussed competition with easier digestible carbohydrates (sugars, starch) deprived from the food supply chain. Also for cellulose use as a biopolymer several different competing markets can be distinguished. It is clear that these applications and markets will be influenced by large volume shifts. The world will have to reckon with the increase of competition and feedstock shortage (land use/biodiversity) (van Dam, de Klerk-Engels, Struik, & Rabbinge, 2005). It is of interest - in the context of sustainable development of the bioeconomy - to categorize the already available and emerging lignocellulosic resources in a matrix structure. When composing such "cellulose resource matrix" attention should be given to the quality aspects as well as to the available quantities and practical possibilities of processing the

  11. Matrix string partition function

    CERN Document Server

    Kostov, Ivan K; Kostov, Ivan K.; Vanhove, Pierre

    1998-01-01

    We evaluate quasiclassically the Ramond partition function of Euclidean D=10 U(N) super Yang-Mills theory reduced to a two-dimensional torus. The result can be interpreted in terms of free strings wrapping the space-time torus, as expected from the point of view of Matrix string theory. We demonstrate that, when extrapolated to the ultraviolet limit (small area of the torus), the quasiclassical expressions reproduce exactly the recently obtained expression for the partition of the completely reduced SYM theory, including the overall numerical factor. This is an evidence that our quasiclassical calculation might be exact.

  12. Matrix vector analysis

    CERN Document Server

    Eisenman, Richard L

    2005-01-01

    This outstanding text and reference applies matrix ideas to vector methods, using physical ideas to illustrate and motivate mathematical concepts but employing a mathematical continuity of development rather than a physical approach. The author, who taught at the U.S. Air Force Academy, dispenses with the artificial barrier between vectors and matrices--and more generally, between pure and applied mathematics.Motivated examples introduce each idea, with interpretations of physical, algebraic, and geometric contexts, in addition to generalizations to theorems that reflect the essential structur

  13. Random matrix theory

    CERN Document Server

    Deift, Percy

    2009-01-01

    This book features a unified derivation of the mathematical theory of the three classical types of invariant random matrix ensembles-orthogonal, unitary, and symplectic. The authors follow the approach of Tracy and Widom, but the exposition here contains a substantial amount of additional material, in particular, facts from functional analysis and the theory of Pfaffians. The main result in the book is a proof of universality for orthogonal and symplectic ensembles corresponding to generalized Gaussian type weights following the authors' prior work. New, quantitative error estimates are derive

  14. Supported Molecular Matrix Electrophoresis.

    Science.gov (United States)

    Matsuno, Yu-Ki; Kameyama, Akihiko

    2015-01-01

    Mucins are difficult to separate using conventional gel electrophoresis methods such as SDS-PAGE and agarose gel electrophoresis, owing to their large size and heterogeneity. On the other hand, cellulose acetate membrane electrophoresis can separate these molecules, but is not compatible with glycan analysis. Here, we describe a novel membrane electrophoresis technique, termed "supported molecular matrix electrophoresis" (SMME), in which a porous polyvinylidene difluoride (PVDF) membrane filter is used to achieve separation. This description includes the separation, visualization, and glycan analysis of mucins with the SMME technique.

  15. Matrix algebra for linear models

    CERN Document Server

    Gruber, Marvin H J

    2013-01-01

    Matrix methods have evolved from a tool for expressing statistical problems to an indispensable part of the development, understanding, and use of various types of complex statistical analyses. This evolution has made matrix methods a vital part of statistical education. Traditionally, matrix methods are taught in courses on everything from regression analysis to stochastic processes, thus creating a fractured view of the topic. Matrix Algebra for Linear Models offers readers a unique, unified view of matrix analysis theory (where and when necessary), methods, and their applications. Written f

  16. Regulation of pituitary hormones and cell proliferation by components of the extracellular matrix

    Directory of Open Access Journals (Sweden)

    M. Paez-Pereda

    2005-10-01

    Full Text Available The extracellular matrix is a three-dimensional network of proteins, glycosaminoglycans and other macromolecules. It has a structural support function as well as a role in cell adhesion, migration, proliferation, differentiation, and survival. The extracellular matrix conveys signals through membrane receptors called integrins and plays an important role in pituitary physiology and tumorigenesis. There is a differential expression of extracellular matrix components and integrins during the pituitary development in the embryo and during tumorigenesis in the adult. Different extracellular matrix components regulate adrenocorticotropin at the level of the proopiomelanocortin gene transcription. The extracellular matrix also controls the proliferation of adrenocorticotropin-secreting tumor cells. On the other hand, laminin regulates the production of prolactin. Laminin has a dynamic pattern of expression during prolactinoma development with lower levels in the early pituitary hyperplasia and a strong reduction in fully grown prolactinomas. Therefore, the expression of extracellular matrix components plays a role in pituitary tumorigenesis. On the other hand, the remodeling of the extracellular matrix affects pituitary cell proliferation. Matrix metalloproteinase activity is very high in all types of human pituitary adenomas. Matrix metalloproteinase secreted by pituitary cells can release growth factors from the extracellular matrix that, in turn, control pituitary cell proliferation and hormone secretion. In summary, the differential expression of extracellular matrix components, integrins and matrix metalloproteinase contributes to the control of pituitary hormone production and cell proliferation during tumorigenesis.

  17. Extracellular Matrix Proteins

    Directory of Open Access Journals (Sweden)

    Linda Christian Carrijo-Carvalho

    2012-01-01

    Full Text Available Lipocalin family members have been implicated in development, regeneration, and pathological processes, but their roles are unclear. Interestingly, these proteins are found abundant in the venom of the Lonomia obliqua caterpillar. Lipocalins are β-barrel proteins, which have three conserved motifs in their amino acid sequence. One of these motifs was shown to be a sequence signature involved in cell modulation. The aim of this study is to investigate the effects of a synthetic peptide comprising the lipocalin sequence motif in fibroblasts. This peptide suppressed caspase 3 activity and upregulated Bcl-2 and Ki-67, but did not interfere with GPCR calcium mobilization. Fibroblast responses also involved increased expression of proinflammatory mediators. Increase of extracellular matrix proteins, such as collagen, fibronectin, and tenascin, was observed. Increase in collagen content was also observed in vivo. Results indicate that modulation effects displayed by lipocalins through this sequence motif involve cell survival, extracellular matrix remodeling, and cytokine signaling. Such effects can be related to the lipocalin roles in disease, development, and tissue repair.

  18. Play and Community in the Classroom.

    Science.gov (United States)

    King, Nechie R.

    1997-01-01

    Children recognize two kinds of classroom play: instrumental play organized by teachers for academic purposes; and illicit play stressing surreptitious, unsanctioned activities like whispering and clowning around. Each is associated with a particular form of classroom community. This article considers how the nature of classroom play influences…

  19. Teatro! Hispanic Plays for Young People.

    Science.gov (United States)

    Vigil, Angel

    This collection of 14 folk drama scripts is drawn from the Hispanic culture and traditions of the American Southwest and designed for use in educational settings. The plays are short, simple, and easy to produce. A single play can fill a class period, while several plays grouped together would make a school assembly. Six plays, intended for grades…

  20. The development of early sociodramatic play

    NARCIS (Netherlands)

    Deunk, M.I.; Berenst, J.; de Glopper, C.M.

    2008-01-01

    In this article we study the beginnings of sociodramatic play. We examine the pretend play interactions of a Dutch girl, Peggy, and focus on her transition into sociodramatic play. Initially, Peggy interprets only some elements of her play interactions at the pretend level. At age 2;9, Peggy shows s

  1. Teatro! Hispanic Plays for Young People.

    Science.gov (United States)

    Vigil, Angel

    This collection of 14 folk drama scripts is drawn from the Hispanic culture and traditions of the American Southwest and designed for use in educational settings. The plays are short, simple, and easy to produce. A single play can fill a class period, while several plays grouped together would make a school assembly. Six plays, intended for grades…

  2. Evaluative Intervention Research in Child's Play.

    Science.gov (United States)

    Yawkey, Thomas Daniels; Fox, Franklin Daniel

    1981-01-01

    Evaluative intervention research studies in pretend play are investigations that examine the potential of imaginative play in young children to demonstrate a relationship between play and cognitive, social, and emotional growth. A review of the research indicates that children who engage in imaginative play yield higher test scores than those in…

  3. Superman Comes to Preschool: Superhero TV Play.

    Science.gov (United States)

    Ritchie, Kathleen E.; Johnson, Zita M.

    Systematic efforts at the Arizona State Child Study Laboratory were successful in replacing children's undesirable superhero play with other types of sociodramatic play. Teachers found superhero play undesirable because it was aggressive and noisy and was accompanied by an increase in random activity. Observations indicated that superhero play had…

  4. Conceptualizing the Play Policies in Preschool Curriculums

    Science.gov (United States)

    Sener, Tulin

    2013-01-01

    This research attempted to describe the play policies in preschool institutions in Ankara, Turkey. The aim of this study is to determine the approaches of the preschools to the children's play. "Play Policy Questionnaire" administered to all directors and teachers of 20 public preschools and 20 private preschools. Play policy of…

  5. Introduction to Plays, English: 5112.44.

    Science.gov (United States)

    Ozan, Ruth S.

    Several plays are studied to introduce students to theatrical terms and to the elements of a play in this quinmester course for Dade County High Schools. Several approaches to the study of the play are suggested such as individual and a large group production of a play, the use of a unified theme such as Youth vs. Tradition, or the line of…

  6. Strategies for Family Facilitation of Play Dates

    Science.gov (United States)

    Chambers, Cynthia R.; Horn, Eva M.

    2010-01-01

    Play dates can serve several functions for young children, including children with social difficulties, such as developmental delays, behavioral disorders, autism spectrum disorders, and shyness. Play dates provide children with additional opportunities to be around peers and to practice skills associated with peer play interactions. Play dates…

  7. Psychiatrists' Perceptions of Role-Playing Games.

    Science.gov (United States)

    Lis, Eric; Chiniara, Carl; Biskin, Robert; Montoro, Richard

    2015-09-01

    The literature has seen a surge in research on the mental health impacts of technologies such as Facebook, video games, and massively-multiplayer online role-playing games such as World of Warcraft, but little is known regarding the mental health impact of non-video role-playing games, such as Dungeons & Dragons. The present study examines how psychiatrists' perceive role-playing games and whether they play them. Psychiatrists at a tertiary care centre in Canada completed a questionnaire assessing history of playing role-playing games and whether they associate them with psychopathology. Forty-eight psychiatrists responded. Twenty-three percent have played a role-playing game over their lifetimes. Twenty-two percent believed there was an association between psychopathology and role-playing games. A majority of psychiatrists who responded do not associate role-playing games with psychopathology. Implications for clinical practice and future research are discussed.

  8. Finger Forces in Clarinet Playing

    Directory of Open Access Journals (Sweden)

    Alex Hofmann

    2016-08-01

    Full Text Available Clarinettists close and open multiple tone holes to alter the pitch of the tones. Their fingering technique must be fast, precise, and coordinated with the tongue articulation. In this empirical study, finger force profiles and tongue techniques of clarinet students (N = 17 and professional clarinettists (N = 6 were investigated under controlled performance conditions. First, in an expressive-performance task, eight selected excerpts from the first Weber Concerto were performed. These excerpts were chosen to fit in a 2 x 2 x 2 design (register: low--high; tempo: slow--fast, dynamics: soft--loud. There was an additional condition controlled by the experimenter, which determined the expression levels (low--high of the performers. Second, a technical-exercise task, an isochronous 23-tone melody was designed that required different effectors to produce the sequence (finger-only, tongue-only, combined tongue-finger actions. The melody was performed in three tempo conditions (slow, medium, fast in a synchronization-continuation paradigm. Participants played on a sensor-equipped Viennese clarinet, which tracked finger forces and reed oscillations simultaneously. From the data, average finger force (Fmean and peak force (Fmax were calculated. The overall finger forces were low (Fmean = 1.17 N, Fmax = 3.05 N compared to those on other musical instruments (e.g. guitar. Participants applied the largest finger forces during the high expression level performance conditions (Fmean = 1.21 N.For the technical exercise task, timing and articulation information were extracted from the reed signal. Here, the timing precision of the fingers deteriorated the timing precision of the tongue for combined tongue-finger actions, especially for faster tempi. Although individual finger force profiles were overlapping, the group of professional players applied less finger force overall (Fmean = 0.54 N. Such sensor instruments provide useful insights into player

  9. Finger Forces in Clarinet Playing.

    Science.gov (United States)

    Hofmann, Alex; Goebl, Werner

    2016-01-01

    Clarinettists close and open multiple tone holes to alter the pitch of the tones. Their fingering technique must be fast, precise, and coordinated with the tongue articulation. In this empirical study, finger force profiles and tongue techniques of clarinet students (N = 17) and professional clarinettists (N = 6) were investigated under controlled performance conditions. First, in an expressive-performance task, eight selected excerpts from the first Weber Concerto were performed. These excerpts were chosen to fit in a 2 × 2 × 2 design (register: low-high; tempo: slow-fast, dynamics: soft-loud). There was an additional condition controlled by the experimenter, which determined the expression levels (low-high) of the performers. Second, a technical-exercise task, an isochronous 23-tone melody was designed that required different effectors to produce the sequence (finger-only, tongue-only, combined tongue-finger actions). The melody was performed in three tempo conditions (slow, medium, fast) in a synchronization-continuation paradigm. Participants played on a sensor-equipped Viennese clarinet, which tracked finger forces and reed oscillations simultaneously. From the data, average finger force (F mean ) and peak force (F max ) were calculated. The overall finger forces were low (F mean = 1.17 N, F max = 3.05 N) compared to those on other musical instruments (e.g., guitar). Participants applied the largest finger forces during the high expression level performance conditions (F mean = 1.21 N). For the technical exercise task, timing and articulation information were extracted from the reed signal. Here, the timing precision of the fingers deteriorated the timing precision of the tongue for combined tongue-finger actions, especially for faster tempi. Although individual finger force profiles were overlapping, the group of professional players applied less finger force overall (F mean = 0.54 N). Such sensor instruments provide useful insights into player

  10. Play in adulthood. A developmental consideration.

    Science.gov (United States)

    Colarusso, C A

    1993-01-01

    This paper is about normal development, addressing the basic characteristics and evolution of play throughout life, with particular emphasis on the nature of play in adulthood. Although the psychoanalytic literature on play in childhood is extensive, undoubtedly because of its relevance to child analysis, very little has been written on the subject of adult play or on the relationship between adult play and its childhood antecedents.

  11. Matrix Quantization of Turbulence

    CERN Document Server

    Floratos, Emmanuel

    2011-01-01

    Based on our recent work on Quantum Nambu Mechanics $\\cite{af2}$, we provide an explicit quantization of the Lorenz chaotic attractor through the introduction of Non-commutative phase space coordinates as Hermitian $ N \\times N $ matrices in $ R^{3}$. For the volume preserving part, they satisfy the commutation relations induced by one of the two Nambu Hamiltonians, the second one generating a unique time evolution. Dissipation is incorporated quantum mechanically in a self-consistent way having the correct classical limit without the introduction of external degrees of freedom. Due to its volume phase space contraction it violates the quantum commutation relations. We demonstrate that the Heisenberg-Nambu evolution equations for the Matrix Lorenz system develop fast decoherence to N independent Lorenz attractors. On the other hand there is a weak dissipation regime, where the quantum mechanical properties of the volume preserving non-dissipative sector survive for long times.

  12. Matrix Graph Grammars

    CERN Document Server

    Velasco, Pedro Pablo Perez

    2008-01-01

    This book objective is to develop an algebraization of graph grammars. Equivalently, we study graph dynamics. From the point of view of a computer scientist, graph grammars are a natural generalization of Chomsky grammars for which a purely algebraic approach does not exist up to now. A Chomsky (or string) grammar is, roughly speaking, a precise description of a formal language (which in essence is a set of strings). On a more discrete mathematical style, it can be said that graph grammars -- Matrix Graph Grammars in particular -- study dynamics of graphs. Ideally, this algebraization would enforce our understanding of grammars in general, providing new analysis techniques and generalizations of concepts, problems and results known so far.

  13. Matrix anticirculant calculus

    Science.gov (United States)

    Dimiev, Stancho; Stoev, Peter; Stoilova, Stanislava

    2013-12-01

    The notion of anticirculant is ordinary of interest for specialists of general algebra (to see for instance [1]). In this paper we develop some aspects of anticirculants in real function theory. Denoting by X≔x0+jx1+⋯+jmxm, xk∈R, m+1 = 2n, and jk is the k-th degree of the matrix j = (0100...00010...00001...0..................-1000...0), we study the functional anticirculants f(X)≔f0(x0,x1,...,xm)+jf1(x0,x1,...,xm)+⋯+jm-1fm-1(x0,x1,...,xm)+jmfm(x0,x1,...,xm), where fk(x0,x1,...,xm) are smooth functions of 2n real variables. A continuation for complex function theory will appear.

  14. Light cone matrix product

    Energy Technology Data Exchange (ETDEWEB)

    Hastings, Matthew B [Los Alamos National Laboratory

    2009-01-01

    We show how to combine the light-cone and matrix product algorithms to simulate quantum systems far from equilibrium for long times. For the case of the XXZ spin chain at {Delta} = 0.5, we simulate to a time of {approx} 22.5. While part of the long simulation time is due to the use of the light-cone method, we also describe a modification of the infinite time-evolving bond decimation algorithm with improved numerical stability, and we describe how to incorporate symmetry into this algorithm. While statistical sampling error means that we are not yet able to make a definite statement, the behavior of the simulation at long times indicates the appearance of either 'revivals' in the order parameter as predicted by Hastings and Levitov (e-print arXiv:0806.4283) or of a distinct shoulder in the decay of the order parameter.

  15. Matrix membranes and integrability

    Energy Technology Data Exchange (ETDEWEB)

    Zachos, C. [Argonne National Lab., IL (United States); Fairlie, D. [University of Durham (United Kingdom). Dept. of Mathematical Sciences; Curtright, T. [University of Miami, Coral Gables, FL (United States). Dept. of Physics

    1997-06-01

    This is a pedagogical digest of results reported in Curtright, Fairlie, {ampersand} Zachos 1997, and an explicit implementation of Euler`s construction for the solution of the Poisson Bracket dual Nahm equation. But it does not cover 9 and 10-dimensional systems, and subsequent progress on them Fairlie 1997. Cubic interactions are considered in 3 and 7 space dimensions, respectively, for bosonic membranes in Poisson Bracket form. Their symmetries and vacuum configurations are explored. Their associated first order equations are transformed to Nahm`s equations, and are hence seen to be integrable, for the 3-dimensional case, by virtue of the explicit Lax pair provided. Most constructions introduced also apply to matrix commutator or Moyal Bracket analogs.

  16. Spherical membranes in Matrix theory

    CERN Document Server

    Kabat, D; Kabat, Daniel; Taylor, Washington

    1998-01-01

    We consider membranes of spherical topology in uncompactified Matrix theory. In general for large membranes Matrix theory reproduces the classical membrane dynamics up to 1/N corrections; for certain simple membrane configurations, the equations of motion agree exactly at finite N. We derive a general formula for the one-loop Matrix potential between two finite-sized objects at large separations. Applied to a graviton interacting with a round spherical membrane, we show that the Matrix potential agrees with the naive supergravity potential for large N, but differs at subleading orders in N. The result is quite general: we prove a pair of theorems showing that for large N, after removing the effects of gravitational radiation, the one-loop potential between classical Matrix configurations agrees with the long-distance potential expected from supergravity. As a spherical membrane shrinks, it eventually becomes a black hole. This provides a natural framework to study Schwarzschild black holes in Matrix theory.

  17. Linearized supergravity from Matrix theory

    CERN Document Server

    Kabat, D; Kabat, Daniel; Taylor, Washington

    1998-01-01

    We show that the linearized supergravity potential between two objects arising from the exchange of quanta with zero longitudinal momentum is reproduced to all orders in 1/r by terms in the one-loop Matrix theory potential. The essential ingredient in the proof is the identification of the Matrix theory quantities corresponding to moments of the stress tensor and membrane current. We also point out that finite-N Matrix theory violates the Equivalence Principle.

  18. Lectures on Matrix Field Theory

    Science.gov (United States)

    Ydri, Badis

    The subject of matrix field theory involves matrix models, noncommutative geometry, fuzzy physics and noncommutative field theory and their interplay. In these lectures, a lot of emphasis is placed on the matrix formulation of noncommutative and fuzzy spaces, and on the non-perturbative treatment of the corresponding field theories. In particular, the phase structure of noncommutative $\\phi^4$ theory is treated in great detail, and an introduction to noncommutative gauge theory is given.

  19. Matrix elements of unstable states

    CERN Document Server

    Bernard, V; Meißner, U -G; Rusetsky, A

    2012-01-01

    Using the language of non-relativistic effective Lagrangians, we formulate a systematic framework for the calculation of resonance matrix elements in lattice QCD. The generalization of the L\\"uscher-Lellouch formula for these matrix elements is derived. We further discuss in detail the procedure of the analytic continuation of the resonance matrix elements into the complex energy plane and investigate the infinite-volume limit.

  20. Enhancing an R-matrix

    CERN Document Server

    MacKaay, M A

    1996-01-01

    In order to construct a representation of the tangle category one needs an enhanced R-matrix. In this paper we define a sufficient and necessary condition for enhancement that can be checked easily for any R-matrix. If the R-matrix can be enhanced, we also show how to construct the additional data that define the enhancement. As a direct consequence we find a sufficient condition for the construction of a knot invariant.

  1. Automatic generation of matrix element derivatives for tight binding models

    Science.gov (United States)

    Elena, Alin M.; Meister, Matthias

    2005-10-01

    Tight binding (TB) models are one approach to the quantum mechanical many-particle problem. An important role in TB models is played by hopping and overlap matrix elements between the orbitals on two atoms, which of course depend on the relative positions of the atoms involved. This dependence can be expressed with the help of Slater-Koster parameters, which are usually taken from tables. Recently, a way to generate these tables automatically was published. If TB approaches are applied to simulations of the dynamics of a system, also derivatives of matrix elements can appear. In this work we give general expressions for first and second derivatives of such matrix elements. Implemented in a tight binding computer program, like, for instance, DINAMO, they obviate the need to type all the required derivatives of all occurring matrix elements by hand.

  2. Matrix Models and Gravitational Corrections

    CERN Document Server

    Dijkgraaf, R; Temurhan, M; Dijkgraaf, Robbert; Sinkovics, Annamaria; Temurhan, Mine

    2002-01-01

    We provide evidence of the relation between supersymmetric gauge theories and matrix models beyond the planar limit. We compute gravitational R^2 couplings in gauge theories perturbatively, by summing genus one matrix model diagrams. These diagrams give the leading 1/N^2 corrections in the large N limit of the matrix model and can be related to twist field correlators in a collective conformal field theory. In the case of softly broken SU(N) N=2 super Yang-Mills theories, we find that these exact solutions of the matrix models agree with results obtained by topological field theory methods.

  3. A matrix model for WZW

    Energy Technology Data Exchange (ETDEWEB)

    Dorey, Nick [Department of Applied Mathematics and Theoretical Physics, University of Cambridge,Wilberforce Road, Cambridge, CB3 OWA (United Kingdom); Tong, David [Department of Applied Mathematics and Theoretical Physics, University of Cambridge,Wilberforce Road, Cambridge, CB3 OWA (United Kingdom); Department of Theoretical Physics, TIFR,Homi Bhabha Road, Mumbai 400 005 (India); Stanford Institute for Theoretical Physics,Via Pueblo, Stanford, CA 94305 (United States); Turner, Carl [Department of Applied Mathematics and Theoretical Physics, University of Cambridge,Wilberforce Road, Cambridge, CB3 OWA (United Kingdom)

    2016-08-01

    We study a U(N) gauged matrix quantum mechanics which, in the large N limit, is closely related to the chiral WZW conformal field theory. This manifests itself in two ways. First, we construct the left-moving Kac-Moody algebra from matrix degrees of freedom. Secondly, we compute the partition function of the matrix model in terms of Schur and Kostka polynomials and show that, in the large N limit, it coincides with the partition function of the WZW model. This same matrix model was recently shown to describe non-Abelian quantum Hall states and the relationship to the WZW model can be understood in this framework.

  4. A Matrix Model for WZW

    CERN Document Server

    Dorey, Nick; Turner, Carl

    2016-01-01

    We study a U(N) gauged matrix quantum mechanics which, in the large N limit, is closely related to the chiral WZW conformal field theory. This manifests itself in two ways. First, we construct the left-moving Kac-Moody algebra from matrix degrees of freedom. Secondly, we compute the partition function of the matrix model in terms of Schur and Kostka polynomials and show that, in the large $N$ limit, it coincides with the partition function of the WZW model. This same matrix model was recently shown to describe non-Abelian quantum Hall states and the relationship to the WZW model can be understood in this framework.

  5. The extracellular matrix in breast cancer.

    Science.gov (United States)

    Insua-Rodríguez, Jacob; Oskarsson, Thordur

    2016-02-01

    The extracellular matrix (ECM) is increasingly recognized as an important regulator in breast cancer. ECM in breast cancer development features numerous changes in composition and organization when compared to the mammary gland under homeostasis. Matrix proteins that are induced in breast cancer include fibrillar collagens, fibronectin, specific laminins and proteoglycans as well as matricellular proteins. Growing evidence suggests that many of these induced ECM proteins play a major functional role in breast cancer progression and metastasis. A number of the induced ECM proteins have moreover been shown to be essential components of metastatic niches, promoting stem/progenitor signaling pathways and metastatic growth. ECM remodeling enzymes are also markedly increased, leading to major changes in the matrix structure and biomechanical properties. Importantly, several ECM components and ECM remodeling enzymes are specifically induced in breast cancer or during tissue regeneration while healthy tissues under homeostasis express exceedingly low levels. This may indicate that ECM and ECM-associated functions may represent promising drug targets against breast cancer, providing important specificity that could be utilized when developing therapies. Copyright © 2015 Elsevier B.V. All rights reserved.

  6. Google matrix, dynamical attractors, and Ulam networks

    Science.gov (United States)

    Shepelyansky, D. L.; Zhirov, O. V.

    2010-03-01

    We study the properties of the Google matrix generated by a coarse-grained Perron-Frobenius operator of the Chirikov typical map with dissipation. The finite-size matrix approximant of this operator is constructed by the Ulam method. This method applied to the simple dynamical model generates directed Ulam networks with approximate scale-free scaling and characteristics being in certain features similar to those of the world wide web with approximate scale-free degree distributions as well as two characteristics similar to the web: a power-law decay in PageRank that mirrors the decay of PageRank on the world wide web and a sensitivity to the value α in PageRank. The simple dynamical attractors play here the role of popular websites with a strong concentration of PageRank. A variation in the Google parameter α or other parameters of the dynamical map can drive the PageRank of the Google matrix to a delocalized phase with a strange attractor where the Google search becomes inefficient.

  7. Matrix Metalloproteinases-7 and Kidney Fibrosis

    Science.gov (United States)

    Ke, Ben; Fan, Chuqiao; Yang, Liping; Fang, Xiangdong

    2017-01-01

    Matrix metalloproteinase-7 (MMP-7) is a secreted zinc- and calcium-dependent endopeptidase that degrades a broad range of extracellular matrix substrates and additional substrates. MMP-7 playsa crucial role in a diverse array of cellular processes and appears to be a key regulator of fibrosis in several diseases, including pulmonary fibrosis, liver fibrosis, and cystic fibrosis. In particular, the relationship between MMP-7 and kidney fibrosis has attracted significant attention in recent years. Growing evidence indicates that MMP-7 plays an important role in the pathogenesis of kidney fibrosis. Here, we summarize the recent progress in the understanding of the role of MMP-7 in kidney fibrosis. In particular, we discuss how MMP-7 contributes to kidney fibrotic lesions via the following three pathways: epithelial-mesenchymal transition (EMT), transforming growth factor-beta (TGF-β) signaling, and extracellular matrix (ECM) deposition. Further dissection of the crosstalk among and regulation of these pathways will help clinicians and researchers develop effective therapeutic approaches for treating chronic kidney disease.

  8. Gender differences in preschool children's play

    OpenAIRE

    Tarman Starc, Ana

    2015-01-01

    The goal of the final thesis is to shed some light on gender-based differences which can be observed in the way preschool children (aged 3 to 6) play, focusing on differences in the type of play, the size of play groups of boys and girls as well as differences in their playing behaviour with special focus on prosocial and aggressive behaviour. Moreover, the educators' attitude towards play is examined, i.e. how they intervene in the play of boy and girls. In the theoretical part the key c...

  9. Play as production – production as game?

    DEFF Research Database (Denmark)

    Eichberg, Henning

    2015-01-01

    “play” and “game” are, and of their social as well as political significance. At the municipal level, the city of Odense – “city of Hans Christian Andersen” – is branding itself as “city of play”. On the international level, Danish play-related products have expanded on the world market. In the field....... In contrast to the established understanding of play as per definition being “unproductive”, play also shows a productive power. Modernity has dissociated play and production, defining play as unproductive, and work as not-playful, and giving competitive sport priority as the ritual of industrial modernity...

  10. Extended Matrix Variate Hypergeometric Functions and Matrix Variate Distributions

    Directory of Open Access Journals (Sweden)

    Daya K. Nagar

    2015-01-01

    Full Text Available Hypergeometric functions of matrix arguments occur frequently in multivariate statistical analysis. In this paper, we define and study extended forms of Gauss and confluent hypergeometric functions of matrix arguments and show that they occur naturally in statistical distribution theory.

  11. Mueller-Jones Matrix measurement in material identification

    Science.gov (United States)

    Xu, Jiang; Qian, Weixian; Wang, Xiao

    2016-09-01

    The uniformity of lattice arrangement plays an important role in industrial processing, science and technology studies and environmental pollution detection. However, there are very little papers to study surface structure by depolarization characteristics. In order to improve the efficiency and accuracy of material identification system by polarization technology, we developed a new method to decompose the Mueller matrix, we studied the mechanism of the scattering of electromagnetic wave, and analyzed the relationship between the characteristics of depolarization and mechanism of scattering. We used the Jones Matrix and Mueller Matrix to set up the physical model, and decomposed the Mueller-Jones Matrix by the characteristics of polarization, then got the depolarization coefficients (ωd) of the surfaces of the samples. By using this theory, we deduced the relation formula of Mueller matrix, Mueller-Jones matrix and Isotropic-Depolarizer matrix. Based on the polarized characteristics of the samples, we analyzed design method of material identification system and gave the results of the experimental test. Finally, we applied the theory of Fresnel formulas to verify the theoretical model. From the results, we found that the depolarization coefficients of the samples' surfaces were related to the scattering, and in the whole measurement process, the depolarization coefficients of the samples were far different; the method could easily to distinguish the metal and nonmetal, and more quickly to analyze the surface roughness of the samples. Therefore, the depolarization technology had a great application value, and the paper had very important significance on the development of surface structure study.

  12. Complex role of matrix metalloproteinases in angiogenesis

    Institute of Scientific and Technical Information of China (English)

    SANGQINGXIANGAMY

    1998-01-01

    Matrix metalloproteinases (MMPs) and tissue inhibitors of metalloproteinases (TIMPs) play a significant role in regulating angiogenesis,the process of new blood vessel formation.Interstitial collagenase (MMP-1),72kDa gelatinase A/type IV collagenase (MMP-2),and 92 kDA gelatinase B/type IV collagenase (MMP-9) dissolve extracellular matrix (ECM) and may initiate and promote angiogenesis.TIMP-1,TIMP-2,TIMP-3,and possibly,TIMP-4 inhibit neovascularization.A new paradign is emerging that matrilysin (MMP-7),MMP-9,and metalloelastase (MMP-12) may block angiogenesis by converting plasminogen to angiostatin,which is one of the most potent angiogenesis antagonists.MMPs and TIMPs play a complex role in regulating angiogenesis.An understanding of the biochemical and cellular pathways and mechanisms of angiogenesis will provide important information to allow the control of angiogenesis,e.g.the stimulation of angiogenesis for coronary collateral circulation formation;while the inhibition for treating arthritis and cancer.

  13. Matrix Product Operators, Matrix Product States, and ab initio Density Matrix Renormalization Group algorithms

    CERN Document Server

    Chan, Garnet Kin-Lic; Nakatani, Naoki; Li, Zhendong; White, Steven R

    2016-01-01

    Current descriptions of the ab initio DMRG algorithm use two superficially different languages: an older language of the renormalization group and renormalized operators, and a more recent language of matrix product states and matrix product operators. The same algorithm can appear dramatically different when written in the two different vocabularies. In this work, we carefully describe the translation between the two languages in several contexts. First, we describe how to efficiently implement the ab-initio DMRG sweep using a matrix product operator based code, and the equivalence to the original renormalized operator implementation. Next we describe how to implement the general matrix product operator/matrix product state algebra within a pure renormalized operator-based DMRG code. Finally, we discuss two improvements of the ab initio DMRG sweep algorithm motivated by matrix product operator language: Hamiltonian compression, and a sum over operators representation that allows for perfect computational par...

  14. Forms of vitality play in infancy.

    Science.gov (United States)

    Español, Silvia; Martínez, Mauricio; Bordoni, Mariana; Camarasa, Rosario; Carretero, Soledad

    2014-12-01

    In this paper we report a qualitative study based on the constant comparative method to initiate the systematic study of forms of vitality play. This is an unnoticed non-figurative play frame linked to early social play and temporal arts in which child and adult elaborate the dynamics of their own movements and sounds in a repetition-variation form. In the introduction we present the theoretical underpinnings and the sporadic observations we have done in previous studies. Then, by the iterative observations of the recorded material of a longitudinal case study on play during the third year of life, we generated the general category of forms of vitality play and four subcategories of display modes of forms of vitality play (improvised forms of vitality play, ritualized forms of vitality play, forms of vitality play combined with pretend play, and forms of vitality play combined with role playing) which are illustrated with descriptive narratives. We discuss the properties of the developed categories, the limits of the present study, and the need to continue systematizing the research on this playful activity.

  15. Ceramic matrix composite article and process of fabricating a ceramic matrix composite article

    Science.gov (United States)

    Cairo, Ronald Robert; DiMascio, Paul Stephen; Parolini, Jason Robert

    2016-01-12

    A ceramic matrix composite article and a process of fabricating a ceramic matrix composite are disclosed. The ceramic matrix composite article includes a matrix distribution pattern formed by a manifold and ceramic matrix composite plies laid up on the matrix distribution pattern, includes the manifold, or a combination thereof. The manifold includes one or more matrix distribution channels operably connected to a delivery interface, the delivery interface configured for providing matrix material to one or more of the ceramic matrix composite plies. The process includes providing the manifold, forming the matrix distribution pattern by transporting the matrix material through the manifold, and contacting the ceramic matrix composite plies with the matrix material.

  16. Happy Festivus! Parody as playful consumer resistance

    DEFF Research Database (Denmark)

    Mikkonen, Ilona; Bajde, Domen

    2013-01-01

    Drawing upon literary theory, play and consumer resistance literature, we conceptualize consumer parodic resistance – a resistant form of play that critically refunctions dominant consumption discourses and marketplace ideologies. We explore parodic resistance empirically by analyzing Festivus...

  17. Sports Fair Play and Critical Perspective

    Institute of Scientific and Technical Information of China (English)

    许晓峰

    2014-01-01

    Here, this paper suggests that CIFP tamp the ideal of fair play, re-establish the fair play value system, and conduct effective reform of organization and cause correspondingly instead of becoming agent of European centralism and American hegemonism.

  18. Play the Immune System Defender Game

    Science.gov (United States)

    ... Questionnaire The Immune System Play the Immune System Game About the game Granulocytes, macrophages and dendritic cells are immune cells ... last will in Paris. Play the Blood Typing Game Try to save some patients and learn about ...

  19. Titanium dioxide anatase as matrix for matrix-assisted laser desorption/ionization analysis of small molecules.

    Science.gov (United States)

    Castro, Ana L; Madeira, Paulo J Amorim; Nunes, Manuel R; Costa, Fernanda M; Florêncio, M Helena

    2008-12-01

    The use of inorganic species as assisting materials in matrix-assisted laser desorption/ionization (MALDI) analysis is an alternative approach to avoid interfering matrix ions in the low-mass region of the mass spectra. Reports of the application of inorganic species as matrices in MALDI analysis of small molecules are, however, scarce. Nevertheless, titanium dioxide (TiO(2)) powder has been reported to be a promising matrix medium. In this study we further explore the use of TiO(2) as a matrix for the MALDI analysis of low molecular weight compounds. We present results showing that nanosized TiO(2) anatase and TiO(2) rutile perform better as MALDI matrices than a commercial TiO(2) anatase/rutile mixture. Moreover, when using nanosized TiO(2) anatase as a matrix, high-quality mass spectra can be obtained with strong analyte signals and weak or non-existing matrix interference ions. Furthermore, our results show that the phase type plays an important role in the application of TiO(2) as a MALDI matrix.

  20. Hydrogel-Framed Nanofiber Matrix Integrated with a Microfluidic Device for Fluorescence Detection of Matrix Metalloproteinases-9.

    Science.gov (United States)

    Han, Sang Won; Koh, Won-Gun

    2016-06-21

    Matrix metalloproteinases (MMPs) play a pivotal role in regulating the composition of the extracellular matrix and have a critical role in vascular disease, cancer progression, and bone disorders. This paper describes the design and fabrication of a microdevice as a new platform for highly sensitive MMP-9 detection. In this sensing platform, fluorescein isocyanate (FITC)-labeled MMP-9 specific peptides were covalently immobilized on an electrospun nanofiber matrix to utilize an enzymatic cleavage strategy. Prior to peptide immobilization, the nanofiber matrix was incorporated into hydrogel micropatterns for easy size control and handling of the nanofiber matrix. The resultant hydrogel-framed nanofiber matrix immobilizing the peptides was inserted into microfluidic devices consisting of reaction chambers and detection zones. The immobilized peptides were reacted with the MMP-9-containing solution in a reaction chamber, which resulted in the cleavage of the FITC-containing peptide fragments and subsequently generated fluorescent flow at the detection zone. As higher concentrations of the MMP-9 solution were introduced or larger peptide-immobilizing nanofiber areas were used, more peptides were cleaved, and a stronger fluorescence signal was observed. Due to the huge surface area of the nanofiber and small dimensions of the microsystem, a faster response time (30 min) and lower detection limit (10 pM) could be achieved in this study. The hydrogel-framed nanofiber matrix is disposable and can be replaced with new ones immobilizing either the same or different biomolecules for various bioassays, while the microfluidic system can be continuously reused.

  1. A novel urokinase receptor-targeted inhibitor for plasmin and matrix metalloproteinases suppresses vein graft disease

    NARCIS (Netherlands)

    Eefting, D.; Seghers, L.; Grimbergen, J.M.; Vries, M.R. de; Boer, H.C. de; Lardenoye, J.W.H.P.; Jukema, J.W.; Bockel, J.H. van; Quax, P.H.A.

    2010-01-01

    Aims Matrix metalloproteinases (MMP) and plasminogen activator (PA)/plasmin-mediated proteolysis, especially at the cell surface, play important roles in matrix degeneration and smooth muscle cell migration, which largely contributes to vein graft failure. In this study, a novel hybrid protein was d

  2. DigiFys : The interactive play landscape

    OpenAIRE

    Waern, Annika; Back, Jon; Sallnäs Pysander, Eva-Lotta; Heefer, Jasper; Rau, Andreas; Paget, Susan; Petterson, Linda

    2015-01-01

    The DigiFys project explores the design of interactive landscapes for children's outdoor play. The project combines landscape architecture with design of interactive technology, working towards designs that support children in their everyday play activity, close to home. In the creative lab session, we want to co-design the play landscape together with local children. The focus is on acquiring a perspective on similarities and differences between the children’s play culture in Sweden where th...

  3. Creative interactive play for disabled children

    DEFF Research Database (Denmark)

    Marti, Patrizia; Pollini, Alessandro; Rullo, Alessia

    2009-01-01

    The workshop addresses the emerging field of research on robotics, assistive technologies and interaction design promoting play for physically, visually, and hearing impaired children and for emotionally and mentally handicapped children. Interactive devices including toys, pets and educational...... tools as well as interactive collaborative environments may represent a unique opportunity for disable children to full engage in play and have fun. The Creative Interactive Play workshop presents a collection of innovative interactive technologies and case studies for inclusive play and discusses...

  4. Matrix Theory of pp Waves

    CERN Document Server

    Michelson, J

    2004-01-01

    The Matrix Theory that has been proposed for various pp wave backgrounds is discussed. Particular emphasis is on the existence of novel nontrivial supersymmetric solutions of the Matrix Theory. These correspond to branes of various shapes (ellipsoidal, paraboloidal, and possibly hyperboloidal) that are unexpected from previous studies of branes in pp wave geometries.

  5. How to Study a Matrix

    Science.gov (United States)

    Jairam, Dharmananda; Kiewra, Kenneth A.; Kauffman, Douglas F.; Zhao, Ruomeng

    2012-01-01

    This study investigated how best to study a matrix. Fifty-three participants studied a matrix topically (1 column at a time), categorically (1 row at a time), or in a unified way (all at once). Results revealed that categorical and unified study produced higher: (a) performance on relationship and fact tests, (b) study material satisfaction, and…

  6. Large Acrobatic Play Pilgrimage to the West

    Institute of Scientific and Technical Information of China (English)

    马洁

    2006-01-01

    Hosted by Ministry of Culture and Guangzhou Municipal People's Government,Guangzhou Bureau of Culture organized a list of first-class singing and dancing and acrobatic plays in Guangzhou in September 2006. Among these plays, large original acrobatic play Pilgrimage to the West of Guangzhou Acrobatic Troupe went on the stage during October 12th and November 5th.

  7. Pretend Play of Children with Cerebral Palsy

    Science.gov (United States)

    Pfeifer, Luzia Iara; Pacciulio, Amanda Mota; dos Santos, Camila Abrao; dos Santos, Jair Licio; Stagnitti, Karen Ellen

    2011-01-01

    Background and Purpose: Evaluate self-initiated pretend play of children with cerebral palsy. Method: Twenty preschool children participated in the study. Pretend play ability was measured by using the child-initiated pretend play assessment culturally adapted to Brazil. Results: There were significant negative correlations between the children's…

  8. Game Playing: Negotiating Rules and Identities

    Science.gov (United States)

    Winther-Lindqvist, Ditte

    2009-01-01

    Beginning with Lev Vygotsky's long-established assertion that the play of children always involves both imaginary play and rules of behavior, this article argues for a theoretical framework that connects such play with the construction of social identities in kindergarten peer groups. It begins with a discussion of Ivy Schousboe's model of the…

  9. Content Analysis of Block Play Literature.

    Science.gov (United States)

    Conrad, Annabel

    This study examined research on children's block play, using content analysis to review 75 documents that focused on such play. Each document was coded by type (empirical study or nonempirical article) and by 15 topics and 76 subtopics grouped into 4 broad categories: (1) environment/ecology; (2) block play and the school curriculum; (3) block…

  10. Curious Play: Children's Exploration of Nature

    Science.gov (United States)

    Gurholt, Kirsti Pedersen; Sanderud, Jostein Rønning

    2016-01-01

    This article explores the concept of "curious play" as a theoretical framework to understand and communicate children's experiences of free play in nature. The concept emerged interactively from three sources of inspiration: an ethnographically inspired study of children playing in nature; as a critique of the concept of "risky…

  11. Pretend Play of Children with Cerebral Palsy

    Science.gov (United States)

    Pfeifer, Luzia Iara; Pacciulio, Amanda Mota; dos Santos, Camila Abrao; dos Santos, Jair Licio; Stagnitti, Karen Ellen

    2011-01-01

    Background and Purpose: Evaluate self-initiated pretend play of children with cerebral palsy. Method: Twenty preschool children participated in the study. Pretend play ability was measured by using the child-initiated pretend play assessment culturally adapted to Brazil. Results: There were significant negative correlations between the children's…

  12. Playing Fair: An Essential Element in Contracting

    Science.gov (United States)

    Peeler, Tom

    2012-01-01

    Playing fair has a value with which people are all familiar. From the sandboxes of childhood and the competitive sports of youth to the business transactions of adulthood, people have been told how important it is to play fair. Playing fair in contracting is not only essential, it's the legal and ethical thing to do. In this article, the author…

  13. Play as Education in the School Curriculum.

    Science.gov (United States)

    Ediger, Marlow

    Friedrich Froebel, an early advocate of the use of play in kindergarten teaching, argued that the ultimate goal of education was developing the creative person. According to Froebel, teachers could promote creativity through play by using gifts, occupations, and mother play songs. By contrast, Johann Herbart called for a subject centered…

  14. Play under Siege: A Historical Overview

    Science.gov (United States)

    Zigler, Edward F.; Bishop-Josef, Sandra J.

    2009-01-01

    In this updated version of their chapter from "Children's Play: The Roots of Reading" (published by ZERO TO THREE in 2004), the authors describe the recent attack on play, in both early childhood and elementary education. They provide a historical overview of the contentious relationship between play and cognitive development. The authors stress…

  15. Machining of Metal Matrix Composites

    CERN Document Server

    2012-01-01

    Machining of Metal Matrix Composites provides the fundamentals and recent advances in the study of machining of metal matrix composites (MMCs). Each chapter is written by an international expert in this important field of research. Machining of Metal Matrix Composites gives the reader information on machining of MMCs with a special emphasis on aluminium matrix composites. Chapter 1 provides the mechanics and modelling of chip formation for traditional machining processes. Chapter 2 is dedicated to surface integrity when machining MMCs. Chapter 3 describes the machinability aspects of MMCs. Chapter 4 contains information on traditional machining processes and Chapter 5 is dedicated to the grinding of MMCs. Chapter 6 describes the dry cutting of MMCs with SiC particulate reinforcement. Finally, Chapter 7 is dedicated to computational methods and optimization in the machining of MMCs. Machining of Metal Matrix Composites can serve as a useful reference for academics, manufacturing and materials researchers, manu...

  16. Matrix Model Approach to Cosmology

    CERN Document Server

    Chaney, A; Stern, A

    2015-01-01

    We perform a systematic search for rotationally invariant cosmological solutions to matrix models, or more specifically the bosonic sector of Lorentzian IKKT-type matrix models, in dimensions $d$ less than ten, specifically $d=3$ and $d=5$. After taking a continuum (or commutative) limit they yield $d-1$ dimensional space-time surfaces, with an attached Poisson structure, which can be associated with closed, open or static cosmologies. For $d=3$, we obtain recursion relations from which it is possible to generate rotationally invariant matrix solutions which yield open universes in the continuum limit. Specific examples of matrix solutions have also been found which are associated with closed and static two-dimensional space-times in the continuum limit. The solutions provide for a matrix resolution of cosmological singularities. The commutative limit reveals other desirable features, such as a solution describing a smooth transition from an initial inflation to a noninflationary era. Many of the $d=3$ soluti...

  17. Matrix convolution operators on groups

    CERN Document Server

    Chu, Cho-Ho

    2008-01-01

    In the last decade, convolution operators of matrix functions have received unusual attention due to their diverse applications. This monograph presents some new developments in the spectral theory of these operators. The setting is the Lp spaces of matrix-valued functions on locally compact groups. The focus is on the spectra and eigenspaces of convolution operators on these spaces, defined by matrix-valued measures. Among various spectral results, the L2-spectrum of such an operator is completely determined and as an application, the spectrum of a discrete Laplacian on a homogeneous graph is computed using this result. The contractivity properties of matrix convolution semigroups are studied and applications to harmonic functions on Lie groups and Riemannian symmetric spaces are discussed. An interesting feature is the presence of Jordan algebraic structures in matrix-harmonic functions.

  18. Plays Plays

    Directory of Open Access Journals (Sweden)

    Maria Jandyra Cunha

    2008-04-01

    Full Text Available In spite of presenting his drama in a completely inovating way, Richard Morris writes about the same Universal themes that have been worrying his companion playwriters:life and death, love and war. He uses archetypes which are very well known in Literature such as "Time's winged chariot", the ostrich, the drunkard, the dog, and many others. Morris dresses his plot with a modern gown by hinting fairly new issues (doping, John Lennon - Ioko Ono television, Volkswagen, poor people's rights, women's rights and yet he expresses a longing for bygone days or, at least, he is a eulo gizer of the past "our time".

  19. A Heterogeneous Accelerated Matrix Multiplication: OpenCL + APU + GPU+ Fast Matrix Multiply

    CERN Document Server

    D'Alberto, Paolo

    2012-01-01

    As users and developers, we are witnessing the opening of a new computing scenario: the introduction of hybrid processors into a single die, such as an accelerated processing unit (APU) processor, and the plug-and-play of additional graphics processing units (GPUs) onto a single motherboard. These APU processors provide multiple symmetric cores with their memory hierarchies and an integrated GPU. Moreover, these processors are designed to work with external GPUs that can push the peak performance towards the TeraFLOPS boundary. We present a case study for the development of dense Matrix Multiplication (MM) codes for matrix sizes up to 19K\\times19K, thus using all of the above computational engines, and an achievable peak performance of 200 GFLOPS for, literally, a made- at-home built. We present the results of our experience, the quirks, the pitfalls, the achieved performance, and the achievable peak performance.

  20. The Richness of Open-ended Play - Rules, feedback and adaptation mechanisms in intelligent play environments

    Directory of Open Access Journals (Sweden)

    Pepijn Rijnbout

    2015-11-01

    Full Text Available How can we design intelligent play environments for open-ended play that support richness in play? Rich play can be described as ongoing play that changes over time in character, form and nature. This paper elaborates on our initial insights on how rules and goals develop from interaction opportunities of the system, based on two pilot studies with an interactive play environment for open-ended play. Furthermore we will discuss the roles of feedback and adaptation mechanisms in the environment. Those system properties will change the interaction opportunities to match with the current situation in the play environment and to support richness in play.