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Sample records for heavily doped base

  1. Highly efficient and heavily-doped organic light-emitting devices based on an orange phosphorescent iridium complex

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Shunliang; Wang, Qi [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Li, Ming [College of Chemistry, Sichuan University, Chengdu, 610064 (China); Lu, Zhiyun, E-mail: luzhiyun@scu.edu.cn [College of Chemistry, Sichuan University, Chengdu, 610064 (China); Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

    2014-10-15

    Heavily doped and highly efficient phosphorescent organic light-emitting devices (PhOLEDs) had been fabricated by utilizing an orange iridium complex, bis[2-(3′,5′-di-tert-butylbiphenyl-4-yl)benzothiazolato-N,C{sup 2'}]iridium(III) (acetylacetonate) [(tbpbt){sub 2}Ir(acac)], as a phosphor. When the doping concentration of [(tbpbt){sub 2}Ir(acac)] reached as high as 15 wt%, the PhOLEDs exhibited a power efficiency, current efficiency, and external quantum efficiency of 24.5 lm/W, 32.1 cd/A, 15.7%, respectively, implying a promising quenching-resistant characteristics of this novel phosphor. Furthermore, the efficient white PhOLEDs had been obtained by employing (tbpbt){sub 2}Ir(acac) as a self-host orange emitter, indicating that (tbpbt){sub 2}Ir(acac) could serve as a promising phosphor to fabricate white organic light-emitting devices with simplified manufacturing process. - Highlights: • Efficient phosphorescent devices were fabricated. • Optimized phosphor doping ratio reached as high as 15 wt%. • The results proved a promising quench-resistant property of the phosphor. • Efficient white devices based on this phosphor as self-host layer had been realized.

  2. High-efficiency and heavily doped organic light-emitting devices based on quench-resistant red iridium complex

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Qi [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Zhao, Juan; Wang, Jun [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Li, Ming [College of Chemistry, Sichuan University, Chengdu 610064 (China); Lu, Zhiyun, E-mail: luzhiyun@scu.edu.cn [College of Chemistry, Sichuan University, Chengdu 610064 (China)

    2013-02-15

    Highly efficient red phosphorescent organic light-emitting devices had been fabricated using a new iridium complex, bis[2-(9,9-dimethyl-9H-fluoren-2-yl) benzothiazolato-N,C{sup 2'}]iridium(III) (acetylacetonate) [(fbt){sub 2}Ir(acac)] as phosphor. With a high doping concentration of 15 wt%, the device exhibited a maximum luminance efficiency, power efficiency and external quantum efficiency (EQE) of 35.2 cd/A, 21.3 lm/W, 18.2%, respectively, indicating an excellent quench-resistant property of (fbt){sub 2}Ir(acac). The results are appealing towards the development of 'easy-to-make' OLEDs. It has been demonstrated that the high efficiency arises from more balanced charge carriers in the emissive layer. - Highlight: Black-Right-Pointing-Pointer We obtained efficient OLEDs based on newly synthesized quench-resistant phosphor. Black-Right-Pointing-Pointer Peak performance was obtained with 15 wt% (fbt){sub 2}Ir(acac) doped device. Black-Right-Pointing-Pointer Our devices gave one of the best performance among heavily-doped red devices. Black-Right-Pointing-Pointer Balanced carrier transport is crucial for the high performance of our devices.

  3. Highly efficient and heavily-doped organic light-emitting devices based on an orange phosphorescent iridium complex

    International Nuclear Information System (INIS)

    Zhou, Shunliang; Wang, Qi; Li, Ming; Lu, Zhiyun; Yu, Junsheng

    2014-01-01

    Heavily doped and highly efficient phosphorescent organic light-emitting devices (PhOLEDs) had been fabricated by utilizing an orange iridium complex, bis[2-(3′,5′-di-tert-butylbiphenyl-4-yl)benzothiazolato-N,C 2' ]iridium(III) (acetylacetonate) [(tbpbt) 2 Ir(acac)], as a phosphor. When the doping concentration of [(tbpbt) 2 Ir(acac)] reached as high as 15 wt%, the PhOLEDs exhibited a power efficiency, current efficiency, and external quantum efficiency of 24.5 lm/W, 32.1 cd/A, 15.7%, respectively, implying a promising quenching-resistant characteristics of this novel phosphor. Furthermore, the efficient white PhOLEDs had been obtained by employing (tbpbt) 2 Ir(acac) as a self-host orange emitter, indicating that (tbpbt) 2 Ir(acac) could serve as a promising phosphor to fabricate white organic light-emitting devices with simplified manufacturing process. - Highlights: • Efficient phosphorescent devices were fabricated. • Optimized phosphor doping ratio reached as high as 15 wt%. • The results proved a promising quench-resistant property of the phosphor. • Efficient white devices based on this phosphor as self-host layer had been realized

  4. Heavily nitrogen doped, graphene supercapacitor from silk cocoon

    International Nuclear Information System (INIS)

    Sahu, Vikrant; Grover, Sonia; Tulachan, Brindan; Sharma, Meenakshi; Srivastava, Gaurav; Roy, Manas; Saxena, Manav; Sethy, Niroj; Bhargava, Kalpana; Philip, Deepu; Kim, Hansung; Singh, Gurmeet; Singh, Sushil Kumar; Das, Mainak; Sharma, Raj Kishore

    2015-01-01

    Doping of graphene with nitrogen is of much interest, since it improves the overall conductivity and supercapacitive properties. Besides conductivity, nitrogen doping also enhances the pseudo-capacitance due to fast and reversible surface redox processes. In this work, we have developed a cheap and easy process for synthesizing heavily nitrogen doped graphene (15% nitrogen) from non-mulberry silk cocoon membrane (Tassar, Antheraea mylitta) by pyrolyzing the cocoon at 400 °C in argon atmosphere. Further we have investigated the performance of this heavily ‘nitrogen doped graphene’ (NDG) in a supercapacitor device. Our results suggest that NDG obtained from cocoon has improved supercapacitor performance. The improved performance is due to the high electronegativity of nitrogen that forms dipoles on the graphene surface. These dipoles consequently enhance the tendency of graphene to attract charged species to its surface. This is a green and clean synthesis approach for developing electronic materials for energy applications

  5. Superconductivity in heavily boron-doped silicon carbide

    Directory of Open Access Journals (Sweden)

    Markus Kriener, Takahiro Muranaka, Junya Kato, Zhi-An Ren, Jun Akimitsu and Yoshiteru Maeno

    2008-01-01

    Full Text Available The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped silicon carbide. The sample used for that study consisted of cubic and hexagonal SiC phase fractions and hence this led to the question which of them participated in the superconductivity. Here we studied a hexagonal SiC sample, free from cubic SiC phase by means of x-ray diffraction, resistivity, and ac susceptibility.

  6. a Study of Oxygen Precipitation in Heavily Doped Silicon.

    Science.gov (United States)

    Graupner, Robert Kurt

    Gettering of impurities with oxygen precipitates is widely used during the fabrication of semiconductors to improve the performance and yield of the devices. Since the effectiveness of the gettering process is largely dependent on the initial interstitial oxygen concentration, accurate measurements of this parameter are of considerable importance. Measurements of interstitial oxygen following thermal cycles are required for development of semiconductor fabrication processes and for research into the mechanisms of oxygen precipitate nucleation and growth. Efforts by industrial associations have led to the development of standard procedures for the measurement of interstitial oxygen in wafers. However practical oxygen measurements often do not satisfy the requirements of such standard procedures. An additional difficulty arises when the silicon wafer has a low resitivity (high dopant concentration). In such cases the infrared light used for the measurement is severely attenuated by the electrons of holes introduced by the dopant. Since such wafers are the substrates used for the production of widely used epitaxial wafers, this measurement problem is economically important. Alternative methods such as Secondary Ion Mass Spectroscopy or Gas Fusion Analysis have been developed to measure oxygen in these cases. However, neither of these methods is capable of distinguishing interstitial oxygen from precipitated oxygen as required for precipitation studies. In addition to the commercial interest in heavily doped silicon substrates, they are also of interest for research into the role of point defects in nucleation and precipitation processes. Despite considerable research effort, there is still disagreement concerning the type of point defect and its role in semiconductor processes. Studies of changes in the interstitial oxygen concentration of heavily doped and lightly doped silicon wafers could help clarify the role of point defects in oxygen nucleation and precipitation

  7. Growth and characterization of heavily doped silicon crystals

    Energy Technology Data Exchange (ETDEWEB)

    Scala, R.; Porrini, M. [MEMC Electronic Materials SpA, via Nazionale 59, 39012 Merano (Italy); Borionetti, G. [MEMC Electronic Materials SpA, viale Gherzi 31, Novara (Italy)

    2011-08-15

    Silicon crystals grown with the Czochralski method are still the most common material used for the production of electronic devices. In recent years, a growing need of large diameter crystals with increasingly higher doping levels is observed, especially to support the expanding market of discrete devices and its trend towards lower and lower resistivity levels for the silicon substrate. The growth of such heavily doped, large-diameter crystals poses several new challenges to the crystal grower, and the presence of a high dopant concentration in the crystal affects significantly its main properties, requiring also the development of dedicated characterization techniques. This paper illustrates the recent advances in the growth and characterization of silicon crystals heavily doped with antimony, arsenic, phosphorus and boron. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Near-infrared free carrier absorption in heavily doped silicon

    International Nuclear Information System (INIS)

    Baker-Finch, Simeon C.; McIntosh, Keith R.; Yan, Di; Fong, Kean Chern; Kho, Teng C.

    2014-01-01

    Free carrier absorption in heavily doped silicon can have a significant impact on devices operating in the infrared. In the near infrared, the free carrier absorption process can compete with band to band absorption processes, thereby reducing the number of available photons to optoelectronic devices such as solar cells. In this work, we fabricate 18 heavily doped regions by phosphorus and boron diffusion into planar polished silicon wafers; the simple sample structure facilitates accurate and precise measurement of the free carrier absorptance. We measure and model reflectance and transmittance dispersion to arrive at a parameterisation for the free carrier absorption coefficient that applies in the wavelength range between 1000 and 1500 nm, and the range of dopant densities between ∼10 18 and 3 × 10 20  cm −3 . Our measurements indicate that previously published parameterisations underestimate the free carrier absorptance in phosphorus diffusions. On the other hand, published parameterisations are generally consistent with our measurements and model for boron diffusions. Our new model is the first to be assigned uncertainty and is well-suited to routine device analysis

  9. Mid-infrared plasmonic resonances exploiting heavily-doped Ge on Si

    Science.gov (United States)

    Biagioni, P.; Sakat, E.; Baldassarre, L.; Calandrini, E.; Samarelli, A.; Gallacher, K.; Frigerio, J.; Isella, G.; Paul, D. J.; Ortolani, M.

    2015-03-01

    We address the behavior of mid-infrared localized plasmon resonances in elongated germanium antennas integrated on silicon substrates. Calculations based on Mie theory and on the experimentally retrieved dielectric constant allow us to study the tunability and the figures of merit of plasmon resonances in heavily-doped germanium and to preliminarily compare them with those of the most established plasmonic material, gold.

  10. Comparison on mechanical properties of heavily phosphorus- and arsenic-doped Czochralski silicon wafers

    Science.gov (United States)

    Yuan, Kang; Sun, Yuxin; Lu, Yunhao; Liang, Xingbo; Tian, Daxi; Ma, Xiangyang; Yang, Deren

    2018-04-01

    Heavily phosphorus (P)- and arsenic (As)-doped Czochralski silicon (CZ-Si) wafers generally act as the substrates for the epitaxial silicon wafers used to fabricate power and communication devices. The mechanical properties of such two kinds of n-type heavily doped CZ silicon wafers are vital to ensure the quality of epitaxial silicon wafers and the manufacturing yields of devices. In this work, the mechanical properties including the hardness, Young's modulus, indentation fracture toughness and the resistance to dislocation motion have been comparatively investigated for heavily P- and As-doped CZ-Si wafers. It is found that heavily P-doped CZ-Si possesses somewhat higher hardness, lower Young's modulus, larger indentation fracture toughness and stronger resistance to dislocation motion than heavily As-doped CZ-Si. The mechanisms underlying this finding have been tentatively elucidated by considering the differences in the doping effects of P and As in silicon.

  11. Measurement of surface recombination velocity on heavily doped indium phosphide

    International Nuclear Information System (INIS)

    Jenkins, P.; Ghalla-Goradia, M.; Faur, M.; Bailey, S.

    1990-01-01

    The controversy surrounding the published low values of surface recombination velocity (SRV) in n-InP, solidified in recent years when modeling of existing n/p InP solar cells revealed that the front surface SRV had to be higher than 1 x 10 6 cm/sec in order to justify the poor blue response that is characteristic of all n/p InP solar cells. In this paper, SRV on heavily doped (>10 18 cm -3 )n-type and p-type InP is measured as a function of surface treatment. For the limited range of substrates and surface treatments studied, SRV and surface stability depend strongly on the surface treatment. SRVs of ∼10 5 cm/sec in both p-type and n-type InP are obtainable, but in n-type the low SRV surfaces were unstable, and the only stable surfaces on n-type had SRVs of >10 6 cm/sec

  12. Einstein's photoemission emission from heavily-doped quantized structures

    CERN Document Server

    Ghatak, Kamakhya Prasad

    2015-01-01

    This monograph solely investigates the Einstein's Photoemission(EP) from Heavily Doped(HD) Quantized Structures on the basis of newly formulated electron dispersion laws. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The EP in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields  that control the studies of such quantum effect devices. The suggestions for the experimental determinations of different important physical quantities in HD 2D and 3D materials  and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring   physical properties in the presence of intense light waves w...

  13. Effect of 60Co γ-irradiation on the nature of electronic transport in heavily doped n-type GaN based Schottky photodetectors

    Science.gov (United States)

    Chatterjee, Abhishek; Khamari, Shailesh K.; Porwal, S.; Kher, S.; Sharma, T. K.

    2018-04-01

    GaN Schottky photodetectors are fabricated on heavily doped n-type GaN epitaxial layers grown by the hydride vapour phase epitaxy technique. The effect of 60Co γ-radiation on the electronic transport in GaN epilayers and Schottky detectors is studied. In contrast to earlier observations, a steady rise in the carrier concentration with increasing irradiation dose is clearly seen. By considering a two layer model, the contribution of interfacial dislocations in carrier transport is isolated from that of the bulk layer for both the pristine and irradiated samples. The bulk carrier concentration is fitted by using the charge balance equation which indicates that no new electrically active defects are generated by γ-radiation even at 500 kGy dose. The irradiation induced rise in the bulk carrier concentration is attributed to the activation of native Si impurities that are already present in an electrically inert form in the pristine sample. Further, the rise in interfacial contribution in the carrier concentration is governed by the enhanced rate of formation of nitrogen vacancies by irradiation, which leads to a larger diffusion of oxygen impurities. A large value of the characteristic tunnelling energy for both the pristine and irradiated Au/Ni/GaN Schottky devices confirms that the dislocation-assisted tunnelling dominates the low temperature current transport even after irradiation. The advantage of higher displacement energy and larger bandgap of GaN as compared to GaAs is evident from the change in leakage current after irradiation. Further, a fast recovery of the photoresponse of GaN photodetectors after irradiation signifies their compatibility to operate in high radiation zones. The results presented here are found to be crucial in understanding the interaction of 60Co γ-irradiation with n+-GaN epilayers.

  14. Thermal conductivity of high-porosity heavily doped biomorphic silicon carbide prepared from sapele wood biocarbon

    Science.gov (United States)

    Parfen'eva, L. S.; Orlova, T. S.; Smirnov, B. I.; Smirnov, I. A.; Misiorek, H.; Mucha, J.; Jezowski, A.; Cabezas-Rodriguez, R.; Ramirez-Rico, J.

    2012-08-01

    The electrical resistivity and thermal conductivity of high-porosity (˜52 vol %, channel-type pores) bio-SiC samples prepared from sapele wood biocarbon templates have been measured in the temperature range 5-300 K. An analysis has been made of the obtained results in comparison with the data for bio-SiC samples based on beech and eucalyptus, as well as for polycrystalline β-SiC. The conclusion has been drawn that the electrical resistivity and thermal conductivity of bio-SiC samples based on natural wood are typical of heavily doped polycrystalline β-SiC.

  15. Long-Term Stability of Oxide Nanowire Sensors via Heavily Doped Oxide Contact.

    Science.gov (United States)

    Zeng, Hao; Takahashi, Tsunaki; Kanai, Masaki; Zhang, Guozhu; He, Yong; Nagashima, Kazuki; Yanagida, Takeshi

    2017-12-22

    Long-term stability of a chemical sensor is an essential quality for long-term collection of data related to exhaled breath, environmental air, and other sources in the Internet of things (IoT) era. Although an oxide nanowire sensor has shown great potential as a chemical sensor, the long-term stability of sensitivity has not been realized yet due to electrical degradation under harsh sensing conditions. Here, we report a rational concept to accomplish long-term electrical stability of metal oxide nanowire sensors via introduction of a heavily doped metal oxide contact layer. Antimony-doped SnO 2 (ATO) contacts on SnO 2 nanowires show much more stable and lower electrical contact resistance than conventional Ti contacts for high temperature (200 °C) conditions, which are required to operate chemical sensors. The stable and low contact resistance of ATO was confirmed for at least 1960 h under 200 °C in open air. This heavily doped oxide contact enables us to realize the long-term stability of SnO 2 nanowire sensors while maintaining the sensitivity for both NO 2 gas and light (photo) detections. The applicability of our method is confirmed for sensors on a flexible polyethylene naphthalate (PEN) substrate. Since the proposed fundamental concept can be applied to various oxide nanostructures, it will give a foundation for designing long-term stable oxide nanomaterial-based IoT sensors.

  16. Electron transport in heavily doped GdN

    Science.gov (United States)

    Maity, T.; Trodahl, H. J.; Natali, F.; Ruck, B. J.; Vézian, S.

    2018-01-01

    We report measurements of electron transport phenomena in the intrinsic ferromagnetic semiconductor GdN doped with 1.3 ×1021cm-3 electrons. The conductivity, carrier concentration, and thermoelectric power are compared with expectations based on an LSDA+U band structure. In the ferromagnetic state the carriers fill the majority-spin conduction band pockets to the bottom of the minority-spin band. The resistance implies an electron mobility of 18 cm2V-1s-1 at zero temperature, and in turn a mean-free path of 10-30 nm. Spin disorder scattering rapidly reduces the mobility near the 70 K Curie temperature (TC). The thermoelectric power is negative in the paramagnetic phase, as expected for a n -type conductor, with a magnitude that is in agreement with the Fermi energy implied by the band structure. The thermopower reverses sign to be positive in the ferromagnetic phase, which correlates with a strongly temperature-dependent electron diffusion from spin-disorder scattering that increases rapidly as the temperature rises toward TC.

  17. Defect formation in heavily doped Si upon irradiation

    International Nuclear Information System (INIS)

    Gubskaya, V.I.; Kuchinskii, P.V.; Lomako, V.M.

    1981-01-01

    The rates of the carrier removal and radiation defect introduction into n- and p-Si in the concentration range of 10 14 to 10 17 cm -3 upon 7-MeV-electron irradiation have been studied. The spectrum of the vacancy-type defects, defining the carrier removal rate in lightly doped crystals has been found. With doping level increase the carrier removal rate grows irrespective of conductivity type, and at n 0 , p 0 > 10 17 cm -3 is close to the total displacement number. At the same time a decrease in the introduction rate of the known vacancy-type defects is observed. x It is shown that a considerable growth of the carrier removal rate is defined neither by introduction of shallow compensating centers, nor by change in the primary defect charge state. It is suggested that at high doping impurity concentrations compensation in Si is due to the introduction of complexes doping impurity-interstitial or (impurity atom-interstitial) + vacancy, which give deep levels. (author)

  18. High-beam quality, high-efficiency laser based on fiber with heavily Yb(3+)-doped phosphate core and silica cladding.

    Science.gov (United States)

    Egorova, O N; Semjonov, S L; Medvedkov, O I; Astapovich, M S; Okhrimchuk, A G; Galagan, B I; Denker, B I; Sverchkov, S E; Dianov, E M

    2015-08-15

    We have fabricated and tested a composite fiber with an Yb(3+)-doped phosphate glass core and silica cladding. Oscillation with a slope efficiency of 74% was achieved using core pumping at 976 nm with fiber lengths of 48-90 mm in a simple laser configuration, where the cavity was formed by a high-reflectivity Bragg grating and the cleaved fiber end. The measured M(2) factors were as low as 1.05-1.22 even though the fiber was multimode at the lasing wavelength.

  19. Surface photovoltage in heavily doped GaN:Si,Zn

    Science.gov (United States)

    McNamara, J. D.; Behrends, A.; Mohajerani, M. S.; Bakin, A.; Waag, A.; Baski, A. A.; Reshchikov, M. A.

    2014-02-01

    In n-type GaN, an upward band bending of about 1 eV is caused by negative charge at the surface. UV light reduces the band bending by creating a surface photovoltage (SPV), which can be measured by a Kelvin probe. Previously, we reported a fast SPV signal of about 0.6 eV in undoped and moderately doped GaN. In this work, we have studied degenerate GaN co-doped with Zn and Si, with a Si concentration of about 1019 cm-3 and a Zn concentration of 6×1017 cm-3. At room temperature, a fast component of about 0.6 eV was observed. However, after preheating the sample at 600 K for one hour and subsequently cooling the sample to 300 K (all steps performed in vacuum), the fast component disappeared. Instead, a very slow (minutes) and logarithmic in time rise of the SPV was observed with UV illumination. The total change in SPV was about 0.4 eV. This slow SPV transient can be reversibly converted into the "normal" fast (subsecond) rise by letting air or dry oxygen in at room temperature. Possible explanations of the observed unusual SPV transients are discussed.

  20. Intermediate band mobility in heavily titanium-doped silicon layers

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-Diaz, G.; Olea, J.; Martil, I.; Pastor, D. [Dpto. de Fisica Aplicada III (Electricidad y Electronica), Facultad de Ciencias Fisicas, Universidad Complutense de Madrid, 28040 Madrid (Spain); Marti, A.; Antolin, E.; Luque, A [Instituto de Energia Solar, Universidad Politecnica de Madrid, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Ciudad Universitaria sn, 28040 Madrid (Spain)

    2009-09-15

    The sheet resistance and the Hall mobility of high-purity Si wafers, in whose surface Ti atoms are implanted and laser annealed reaching concentrations above 10{sup 21} cm{sup -3}, are measured in the 90-370 K range. Below 240 K, an unconventional behavior is observed that is well explained on the basis of the appearance of an intermediate band (IB) region able to form a blocking junction with the substrate and of the appearance of an IB conduction. Explanations based on ordinary device physics fail to justify all the unconventional behavior of the characteristics observed. (author)

  1. Activation and deactivation in heavily boron-doped silicon

    International Nuclear Information System (INIS)

    Yoo, Seung-Han; Ro, Jae-Sang

    2003-01-01

    A shallow p + /n junction was formed using a ultra-low-energy (ULE) implanter. Activation by rapid thermal annealing (RTA) exhibited both solid phase epitaxy, in which the sheet resistance dropped rapidly, and reverse annealing, in a manner similar to furnace annealing. The temperature ranges in which these phenomena were observed, however, were higher in the case of RTA processing than they were in the case of furnace annealing due to the low thermal budget associated with the former. Deactivation phenomena were investigated for the shallow source/drain junction based on measurements of the post-annealing time and temperature following the RTA treatments. We found that the deactivation kinetics was divided into two regions. In the first regions, the rate of deactivation increased exponentially with the annealing temperature up to 850 .deg. C. In the second regions, it was found to decrease linearly with the annealing temperature beyond 850 .deg. C. We believe that the first region is kinetically limited while the second is thermodynamically limited. We also observed 'transient enhanced deactivation' an anomalous increase in the sheet resistance during the early stage of annealing at temperatures higher than 800 .deg. C. The activation energy for transient enhanced deactivation was measured to be in the 1.75 ∼ 1.87 eV range while that for normal deactivation was found to be between 3.49 and 3.69 eV.

  2. Mobility and Device Applications of Heavily Doped Silicon and Strained SILICON(1-X) Germanium(x) Layers

    Science.gov (United States)

    Carns, Timothy Keith

    With the advent of Si molecular beam epitaxy (Si -MBE), a significant amount of research has occurred to seek alternative high conductivity Si-based materials such as rm Si_{1-x}Ge_ {x} and delta-doped Si. These materials have brought improvements in device speeds and current drives with the added advantage of monolithic integration into Si VLSI circuits. The bulk of research in Si-based materials has been devoted to the implementation of strained rm Si_{1-x}Ge_{x} as the base layer of a rm Si_ {1-x}Ge_{x}/Si heterojunction bipolar transistor (HBT). Because of the valence band offset, the rm Si_{1-x}Ge _{x} layer can be heavily doped, leading to lower base sheet resistances and hence, improved speed performances. The Ge content in the base can also be graded to increase the drift field in the base. However, very few hole mobility measurements have been done in these strained layers, leading to limitations in device modeling and in understanding the transport behavior in this important material. In addition to rm Si_{1 -x}Ge_{x}, much potential also exists in using delta-doping in Si for improved conductivities over those of bulk Si. However, as of yet, delta-doped Si has received little attention. Therefore, this dissertation is dedicated to the investigation of both of these Si-based materials (strained rm Si_{1-x}Ge_{x } and delta-doped Si and rm Si_{1-x}Ge_ {x}) for the purpose of obtaining higher conductivities than comparably doped bulk Si. This work is divided into three parts to accomplish this objective. The first part is contained in Chapter 3 and is comprised of a comprehensive characterization of the hole mobility in compressively strained rm Si_{1 -x}Ge_{x}. Few results have been obtained prior to this research which has led to many inaccuracies in device modeling. The second part of this dissertation in Chapters 4 and 5 is devoted to the study of the mobility behavior in both boron and antimony delta-doped Si and rm Si_ {1-x}Ge_{x}. The important

  3. High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

    International Nuclear Information System (INIS)

    Tu, Nguyen Thanh; Hai, Pham Nam; Anh, Le Duc; Tanaka, Masaaki

    2016-01-01

    We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga_1_−_x,Fe_x)Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

  4. High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

    Energy Technology Data Exchange (ETDEWEB)

    Tu, Nguyen Thanh [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physics, Ho Chi Minh City University of Pedagogy, 280, An Duong Vuong Street, District 5, Ho Chi Minh City 748242 (Viet Nam); Hai, Pham Nam [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Anh, Le Duc [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2016-05-09

    We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

  5. Effect of impurity correlation on the density of states in slightly compensated heavily doped semiconductors

    International Nuclear Information System (INIS)

    Doan Nhat Quang; Nguyen Nhu Dat; Dinh Van An

    1993-07-01

    A theory is developed of the electron density of states (DOS) in slightly compensated heavily doped semiconductors which undergo a thermal treatment. The calculation is carried out within the semiclassical approach to the random impurity field, taking adequately into account high-temperature correlation among the impurities and low temperature screening due to the free carriers as well. Then, a simple analytic expression for the DOS is obtained which exhibits the same energy dependence as in the case of a random impurity distribution, but now with some correlation-induced changes in the coefficients. A numerical estimation on non-compensated n-type sample of GaAs at a doping level of 5 x 10 18 cm -3 shows that in the tail region the correlated DOS turns out to be somewhat larger and cut less sharply than the random one. (author). 45 refs, 2 figs, 1 tab

  6. High critical currents in heavily doped (Gd,Y)Ba2Cu3Ox superconductor tapes

    Energy Technology Data Exchange (ETDEWEB)

    Selvamanickam, V; Gharahcheshmeh, MH; Xu, A; Galstyan, E; Delgado, L; Cantoni, C

    2015-01-19

    REBa2Cu3Ox ((REBCO), RE = rare earth) superconductor tapes with moderate levels of dopants have been optimized for high critical current density in low magnetic fields at 77 K, but they do not exhibit exemplary performance in conditions of interest for practical applications, i.e., temperatures less than 50K and fields of 2-30 T. Heavy doping of REBCO tapes has been avoided by researchers thus far due to deterioration in properties. Here, we report achievement of critical current densities (J(c)) above 20 MA/cm(2) at 30 K, 3 T in heavily doped (25 mol.% Zr-added) (Gd,Y)Ba2Cu3Ox superconductor tapes, which is more than three times higher than the J(c) typically obtained in moderately doped tapes. Pinning force levels above 1000 GN/m(3) have also been attained at 20 K. A composition map of lift factor in J(c) (ratio of J(c) at 30 K, 3 T to the J(c) at 77 K, 0 T) has been developed which reveals the optimum film composition to obtain lift factors above six, which is thrice the typical value. A highly c-axis aligned BaZrO3 (BZO) nanocolumn defect density of nearly 7 x 10(11) cm(-2) as well as 2-3 nm sized particles rich in Cu and Zr have been found in the high J(c) films. (C) 2015 AIP Publishing LLC.

  7. Comparison of the Thermal Degradation of Heavily Nb-Doped and Normal PZT Thin Films.

    Science.gov (United States)

    Yang, Jeong-Suong; Kang, YunSung; Kang, Inyoung; Lim, SeungMo; Shin, Seung-Joo; Lee, JungWon; Hur, Kang Heon

    2017-03-01

    The degradation of niobium-doped lead zirconate titanate (PZT) and two types of PZT thin films were investigated. Undoped PZT, two-step PZT, and heavily Nb-doped PZT (PNZT) around the morphotropic phase boundary were in situ deposited under optimum condition by RF-magnetron sputtering. All 2- [Formula: see text]-thick films had dense perovskite columnar grain structure and self-polarized (100) dominant orientation. PZT thin films were deposited on Pt/TiO x bottom electrode on Si wafer, and PNZT thin film was on Ir/TiW electrode with the help of orientation control. Sputtered PZT films formed on microelectromechanical system (MEMS) gyroscope and the degradation rates were compared at different temperatures. PNZT showed the best resistance to the thermal degradation, followed by two-step PZT. To clarify the effect of oxygen vacancies on the degradation of the film at high temperature, photoluminescence measurement was conducted, which confirmed that oxygen vacancy rate was the lowest in heavy PNZT. Nb-doping PZT thin films suppressed the oxygen deficit and made high imprint with self-polarization. This defect distribution and high internal field allowed PNZT thin film to make the piezoelectric sensors more stable and reliable at high temperature, such as reflow process of MEMS packaging.

  8. Anomalous transmission through heavily doped conducting polymer films with periodic subwavelength hole array

    Science.gov (United States)

    Matsui, Tatsunosuke; Vardeny, Z. Valy; Agrawal, Amit; Nahata, Ajay; Menon, Reghu

    2006-08-01

    We observed resonantly enhanced (or anomalous transmission) terahertz transmission through two-dimensional (2D) periodic arrays of subwavelength apertures with various periodicities fabricated on metallic organic conducting polymer films of polypyrrole heavily doped with PF 6 molecules [PPy(PF6)]. The anomalous transmission spectra are in good agreement with a model involving surface plasmon polariton excitations on the film surfaces. We also found that the resonantly enhanced transmission peaks are broader in the exotic metallic PPy(PF6) films compared to those formed in 2D aperture array in regular metallic films such as silver, indicating that the surface plasmon polaritons on the PPy(PF6) film surfaces have higher attenuation.

  9. Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source

    Energy Technology Data Exchange (ETDEWEB)

    Daniltsev, V. M.; Demidov, E. V.; Drozdov, M. N.; Drozdov, Yu. N., E-mail: drozdyu@ipmras.ru; Kraev, S. A.; Surovegina, E. A.; Shashkin, V. I.; Yunin, P. A. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2016-11-15

    The capabilities of GaAs epitaxial layers extremely heavily doped with tellurium by metal-organic vapor-phase epitaxy using diisopropyl telluride as a source are studied. It is shown that tellurium incorporation into GaAs occurs to an atomic concentration of 10{sup 21} cm{sup –3} without appreciable diffusion and segregation effects. Good carrier concentrations (2 × 10{sup 19} cm{sup –3}) and specific contact resistances of non-alloyed ohmic contacts (1.7 × 10{sup –6} Ω cm{sup 2}) give grounds to use such layers to create non-alloyed ohmic contacts in electronic devices. A sharp decrease in the electrical activity of Te atoms, a decrease in the electron mobility, and an increase in the contact resistance at atomic concentrations above 2 × 10{sup 20} cm{sup –3} are detected.

  10. Spin relaxation through lateral spin transport in heavily doped n -type silicon

    Science.gov (United States)

    Ishikawa, M.; Oka, T.; Fujita, Y.; Sugiyama, H.; Saito, Y.; Hamaya, K.

    2017-03-01

    We experimentally study temperature-dependent spin relaxation including lateral spin diffusion in heavily doped n -type silicon (n+-Si ) layers by measuring nonlocal magnetoresistance in small-sized CoFe/MgO/Si lateral spin-valve (LSV) devices. Even at room temperature, we observe large spin signals, 50-fold the magnitude of those in previous works on n+-Si . By measuring spin signals in LSVs with various center-to-center distances between contacts, we reliably evaluate the temperature-dependent spin diffusion length (λSi) and spin lifetime (τSi). We find that the temperature dependence of τSi is affected by that of the diffusion constant in the n+-Si layers, meaning that it is important to understand the temperature dependence of the channel mobility. A possible origin of the temperature dependence of τSi is discussed in terms of the recent theories by Dery and co-workers.

  11. Defects in heavily phosphorus-doped Si epitaxial films probed by monoenergetic positron beams

    International Nuclear Information System (INIS)

    Uedono, Akira; Tanigawa, Shoichiro; Suzuki, Ryoichi; Ohgaki, Hideaki; Mikado, Tomohisa.

    1994-01-01

    Vacancy-type defects in heavily phosphorus-doped Si epitaxial films were probed by monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured for the epitaxial films grown on the Si substrates by plasma chemical vapor deposition. For the as-deposited film, divacancy-phosphorus complexes were found with high concentration. After 600degC annealing, vacancy clusters were formed near the Si/Si interface, while no drastic change in the depth distribution of the divacancy-phosphorus complexes was observed. By 900degC annealing, the vacancy clusters were annealed out; however, the average number of phosphorus atoms coupled with divacancies increased. The relationship between the vacancy-type defects probed by the positron annihilation technique and the carrier concentration was confirmed. (author)

  12. Defects in heavily phosphorus-doped Si epitaxial films probed by monoenergetic positron beams

    Energy Technology Data Exchange (ETDEWEB)

    Uedono, Akira; Tanigawa, Shoichiro [Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science; Suzuki, Ryoichi; Ohgaki, Hideaki; Mikado, Tomohisa

    1994-11-01

    Vacancy-type defects in heavily phosphorus-doped Si epitaxial films were probed by monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured for the epitaxial films grown on the Si substrates by plasma chemical vapor deposition. For the as-deposited film, divacancy-phosphorus complexes were found with high concentration. After 600degC annealing, vacancy clusters were formed near the Si/Si interface, while no drastic change in the depth distribution of the divacancy-phosphorus complexes was observed. By 900degC annealing, the vacancy clusters were annealed out; however, the average number of phosphorus atoms coupled with divacancies increased. The relationship between the vacancy-type defects probed by the positron annihilation technique and the carrier concentration was confirmed. (author).

  13. Self-Assembled Formation of Well-Aligned Cu-Te Nano-Rods on Heavily Cu-Doped ZnTe Thin Films

    Science.gov (United States)

    Liang, Jing; Cheng, Man Kit; Lai, Ying Hoi; Wei, Guanglu; Yang, Sean Derman; Wang, Gan; Ho, Sut Kam; Tam, Kam Weng; Sou, Iam Keong

    2016-11-01

    Cu doping of ZnTe, which is an important semiconductor for various optoelectronic applications, has been successfully achieved previously by several techniques. However, besides its electrical transport characteristics, other physical and chemical properties of heavily Cu-doped ZnTe have not been reported. We found an interesting self-assembled formation of crystalline well-aligned Cu-Te nano-rods near the surface of heavily Cu-doped ZnTe thin films grown via the molecular beam epitaxy technique. A phenomenological growth model is presented based on the observed crystallographic morphology and measured chemical composition of the nano-rods using various imaging and chemical analysis techniques. When substitutional doping reaches its limit, the extra Cu atoms favor an up-migration toward the surface, leading to a one-dimensional surface modulation and formation of Cu-Te nano-rods, which explain unusual observations on the reflection high energy electron diffraction patterns and apparent resistivity of these thin films. This study provides an insight into some unexpected chemical reactions involved in the heavily Cu-doped ZnTe thin films, which may be applied to other material systems that contain a dopant having strong reactivity with the host matrix.

  14. One unit-cell seed layer induced epitaxial growth of heavily nitrogen doped anatase TiO{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Chen, T L; Hirose, Y; Hitosugi, T; Hasegawa, T [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan)], E-mail: chen@ksp.or.jp

    2008-03-21

    We present a novel way to obtain heavily nitrogen doped anatase TiO{sub 2} films by using a solid-state nitrogen source. Epitaxial growth of the films was realized by introducing one unit-cell seed layer, which was indicated by reflection high-energy electron diffraction as intensity oscillation. Results of x-ray diffraction and x-ray photoelectron spectroscopy confirmed that the films were in the anatase phase heavily doped with nitrogen of {approx}15 at%. The films obtained exhibited considerable narrowing of the optical bandgap, resulting in an enhancement of absorption in the visible-light region. (fast track communication)

  15. Thermal oxidation effect on structural and optical properties of heavily doped phosphorus polycrystalline silicon films

    Energy Technology Data Exchange (ETDEWEB)

    Birouk, B.; Madi, D. [Universite de Jijel, Laboratoire d' Etudes et de Modelisation en Electrotechnique (LAMEL), Cite Ouled Aissa, BP 98, Jijel (Algeria)

    2011-08-15

    The study reported in this paper contributes to better understanding the thermal oxidation effect on structural and optical properties of polycrystalline silicon heavily in situ P-LPCVD films. The deposits, doped at levels 3 x 10{sup 19} and 1.6 x 10{sup 20} cm{sup -3}, have been elaborated from silane decomposition (400 mTorrs, 605 C) on monosilicon substrate oriented left angle 111 right angle. The thermal oxidation was performed at temperatures: 850 C during 1 hour, 1000, 1050, and 1100 C during 15 minutes. The XRD spectra analysis pointed out significant left angle 111 right angle texture evolution, while in the case of left angle 220 right angle and left angle 311 right angle textures, the intensities are practically invariant (variations fall in the uncertainty intervals). The optical characterizations showed that refractive index and absorption coefficient are very sensitive to the oxidation treatment, mainly when the doping level is not very high. We think that atomic oxygen acts as defects passivating agent leading to carriers' concentration increasing. Besides, the optical behavior is modeled in visible and near infrared, by a seven-term polynomial function n {sup 2}=f({lambda} {sup 2}), with alternate signs, instead of theoretically unlimited terms number from Drude's model. It has been shown that fitting parameters fall on Gaussian curves like they do in the theoretical model. (orig.)

  16. High critical currents in heavily doped (Gd,Y)Ba2Cu3Ox superconductor tapes

    International Nuclear Information System (INIS)

    Selvamanickam, V.; Gharahcheshmeh, M. Heydari; Xu, A.; Galstyan, E.; Delgado, L.; Cantoni, C.

    2015-01-01

    REBa 2 Cu 3 O x ((REBCO), RE = rare earth) superconductor tapes with moderate levels of dopants have been optimized for high critical current density in low magnetic fields at 77 K, but they do not exhibit exemplary performance in conditions of interest for practical applications, i.e., temperatures less than 50 K and fields of 2–30 T. Heavy doping of REBCO tapes has been avoided by researchers thus far due to deterioration in properties. Here, we report achievement of critical current densities (J c ) above 20 MA/cm 2 at 30 K, 3 T in heavily doped (25 mol. % Zr-added) (Gd,Y)Ba 2 Cu 3 O x superconductor tapes, which is more than three times higher than the J c typically obtained in moderately doped tapes. Pinning force levels above 1000 GN/m 3 have also been attained at 20 K. A composition map of lift factor in J c (ratio of J c at 30 K, 3 T to the J c at 77 K, 0 T) has been developed which reveals the optimum film composition to obtain lift factors above six, which is thrice the typical value. A highly c-axis aligned BaZrO 3 (BZO) nanocolumn defect density of nearly 7 × 10 11  cm −2 as well as 2–3 nm sized particles rich in Cu and Zr have been found in the high J c films

  17. Very heavily electron-doped CrSi2 as a high-performance high-temperature thermoelectric material

    International Nuclear Information System (INIS)

    Parker, David; Singh, David J

    2012-01-01

    We analyze the thermoelectric behavior, using first principles and Boltzmann transport calculations, of very heavily electron-doped CrSi 2 and find that at temperatures of 900-1250 K and electron dopings of 1-4 × 10 21 cm -3 , thermopowers as large in magnitude as 200 μV K -1 may be found. Such high thermopowers at such high carrier concentrations are extremely rare, and suggest that excellent thermoelectric performance may be found in these ranges of temperature and doping. (paper)

  18. Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

    Energy Technology Data Exchange (ETDEWEB)

    Achatz, Philipp

    2009-05-15

    During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n{sub c} for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers ({approx} 500 cm{sup -1}) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g{sub c}. The granularity also influences significantly the superconducting properties by introducing the superconducting gap {delta} in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the

  19. Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

    International Nuclear Information System (INIS)

    Achatz, Philipp

    2009-01-01

    During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n c for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers (∼ 500 cm -1 ) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g c . The granularity also influences significantly the superconducting properties by introducing the superconducting gap Δ in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the first time in aluminum-doped

  20. Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

    International Nuclear Information System (INIS)

    Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang; Yang, Deren; Lu, Yunhao

    2014-01-01

    The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B 2 I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition

  1. Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn; Yang, Deren [State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Lu, Yunhao, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn [International Center for New-Structured Materials and Laboratory of New-Structured Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2014-01-20

    The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B{sub 2}I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition.

  2. Heavily-doped 2D-quantized structures and the Einstein relation

    CERN Document Server

    Ghatak, Kamakhya P

    2015-01-01

    This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped(HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nanodevices and strong external photo excitation (for measuring photon induced physical properties) are also discussed in this context. The influence of crossed electric and quantizing ma...

  3. Anodic oxidation of wastewater containing the Reactive Orange 16 Dye using heavily boron-doped diamond electrodes

    International Nuclear Information System (INIS)

    Migliorini, F.L.; Braga, N.A.; Alves, S.A.; Lanza, M.R.V.; Baldan, M.R.; Ferreira, N.G.

    2011-01-01

    Highlights: → Electrochemical advanced oxidation process was studied using BDD based anodes with different boron concentrations. → The difference between the non-active and active anodes for organics degradation. → The influence of morphologic and structural properties of BDD electrodes on the RO-16 dye degradation. - Abstract: Boron-doped diamond (BDD) films grown on the titanium substrate were used to study the electrochemical degradation of Reactive Orange (RO) 16 Dye. The films were produced by hot filament chemical vapor deposition (HFCVD) technique using two different boron concentrations. The growth parameters were controlled to obtain heavily doped diamond films. They were named as E1 and E2 electrodes, with acceptor concentrations of 4.0 and 8.0 x 10 21 atoms cm -3 , respectively. The boron levels were evaluated from Mott-Schottky plots also corroborated by Raman's spectra, which characterized the film quality as well as its physical property. Scanning Electron Microscopy showed well-defined microcrystalline grain morphologies with crystal orientation mixtures of (1 1 1) and (1 0 0). The electrode efficiencies were studied from the advanced oxidation process (AOP) to degrade electrochemically the Reactive Orange 16 azo-dye (RO16). The results were analyzed by UV/VIS spectroscopy, total organic carbon (TOC) and high-performance liquid chromatography (HPLC) techniques. From UV/VIS spectra the highest doped electrode (E2) showed the best efficiency for both, the aromaticity reduction and the azo group fracture. These tendencies were confirmed by the TOC and chromatographic measurements. Besides, the results showed a direct relationship among the BDD morphology, physical property, and its performance during the degradation process.

  4. Theoretical investigation of the heavily-doped semiconductor aspect of ultra-dilute GaAsN

    Science.gov (United States)

    Sukpitak, Jessada; Sa-yakanit, Virulh

    2015-12-01

    The model of GaAs1- y N y ( y = 0.001) as a heavily-doped semiconductor in the ultra-dilute region is attentively examined. The model enables GaAsN to be viewed as a disordered assembly of three-dimensional quantum dots (potential wells) caused by random potential fluctuations from nitrogen pairs in the system. Consequently, Feynman's path-integration technique is applied in order to quantify the density of states (DOS) in the vicinity of the conduction band edge. The obtained DOS tail, even though overestimated, still clearly shows a much shorter tail than that the experimental result does. This shows that the heavily-doped semiconductor viewpoint is not proper for GaAsN, not even in the ultra-dilute region. Furthermore, this also suggests that the impurity wave function overlap is not a basic mechanism of band gap reduction.

  5. Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

    Science.gov (United States)

    Okumura, Hironori; Martin, Denis; Malinverni, Marco; Grandjean, Nicolas

    2016-02-01

    We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 °C) allows decreasing the incorporation of donor-like defects (p-type doping compensation. As a result, a net acceptor concentration of 7 × 1019 cm-3 was achieved, and the hole concentration measured by Hall effect was as high as 2 × 1019 cm-3 at room temperature. Using such a high Mg doping level, we fabricated GaN backward diodes without polarization-assisted tunneling. The backward diodes exhibited a tunneling-current density of 225 A/cm2 at a reverse bias of -1 V at room temperature.

  6. Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films

    Directory of Open Access Journals (Sweden)

    T. Yokoya, T. Nakamura, T. Matushita, T. Muro, H. Okazaki, M. Arita, K. Shimada, H. Namatame, M. Taniguchi, Y. Takano, M. Nagao, T. Takenouchi, H. Kawarada and T. Oguchi

    2006-01-01

    Full Text Available We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES of microwave plasma-assisted chemical vapor deposition diamond films with different B concentrations in order to study the origin of the metallic behavior of superconducting diamond. SXARPES results clearly show valence band dispersions with a bandwidth of ~23 eV and with a top of the valence band at gamma point in the Brillouin zone, which are consistent with the calculated valence band dispersions of pure diamond. Boron concentration-dependent band dispersions near the Fermi level (EF exhibit a systematic shift of EF, indicating depopulation of electrons due to hole doping. These SXARPES results indicate that diamond bands retain for heavy boron doping and holes in the diamond band are responsible for the metallic states leading to superconductivity at low temperature. A high-resolution photoemission spectroscopy spectrum near EF of a heavily boron-doped diamond superconductor is also presented.

  7. Unusual near-band-edge photoluminescence at room temperature in heavily-doped ZnO:Al thin films prepared by pulsed laser deposition

    International Nuclear Information System (INIS)

    Mohanty, Bhaskar Chandra; Yeon, Deuk Ho; Das, Sachindra Nath; Kwak, Ji Hye; Yoon, Kyung Hoon; Cho, Yong Soo

    2013-01-01

    Room temperature photoluminescence (PL) properties of heavily-doped ZnO:Al thin films (with carrier concentration n in the range of 5–20 × 10 20 cm −3 ) prepared by pulsed laser deposition have been investigated. Despite their high carrier concentration, the films exhibited strong room temperature near-band-edge bound excitons at ∼3.34 eV and an unusual peak at ∼3.16 eV, and negligible deep-level emission even for the films deposited at a temperature as low as 25 °C. The radiative efficiency of the films increased with growth temperature as a result of increased n and improved crystallinity. A large blue shift of optical band gap was observed, which is consistent with the n-dependent Burstein–Moss and band gap-renormalization effects. Comparison of the results of the PL and optical measurements revealed a large Stokes shift that increased with increase in n. It has been explained by a model based on local potential fluctuations caused by randomly-distributed doping impurities. - Highlights: • Studied PL properties of heavily-doped ZnO:Al films grown by PLD. • Unusual strong near-band-edge emissions and negligible deep-level emission at RT. • Increased optical band gap with growth temperature and thus carrier concentration. • Stokes shift and PL peak width increased with carrier concentration. • Results explained by a model based on local potential fluctuations

  8. Path-integral calculation of the density of states in heavily doped strongly compensated semiconductors in a magnetic field

    International Nuclear Information System (INIS)

    Koinov, Z.G.; Yanchev, I.Y.

    1981-09-01

    The density of states in heavily doped strongly compansated semiconductors in a strong magnetic field is calculated by using the path-integral method. The case is considered when correlation exists in the impurity positions owing to the Coulomb interactions between the charged donors and acceptors during the high-temperature preparation of the samples. The semiclassical formula is rederived and corrections to it due to the long-range character of the potential and its short-range fluctuations are obtained. The density of states in the tail is studied and analytical results are given in the classical and quantum cases. (author)

  9. Resonantly-enhanced transmission through a periodic array of subwavelength apertures in heavily-doped conducting polymer films

    Science.gov (United States)

    Matsui, Tatsunosuke; Vardeny, Z. Valy; Agrawal, Amit; Nahata, Ajay; Menon, Reghu

    2006-02-01

    We observed resonantly-enhanced terahertz transmission through two-dimensional (2D) periodic arrays of subwavelength apertures with various periodicities fabricated on metallic organic conducting polymer films of polypyrrole heavily doped with PF6 molecules [PPy(PF6)]. The "anomalous transmission" spectra are in good agreement with a model involving surface plasmon polariton excitations on the film surfaces. We also found that the `anomalous transmission' peaks are broader in the exotic metallic PPy (PF6) films compared to those formed in 2D aperture array in regular metallic films such as silver, showing that the surface plasmon polaritons on the PPy (PF6) film surfaces have higher attenuation.

  10. The effect of irradiation temperature on the optical attenuation recovery in heavily Ge-doped single mode silica core fibers

    International Nuclear Information System (INIS)

    Bertolotti, M.; Mabrouk, M.A.; Ferrari, A.; Serra, A.; Viezzoli, G.

    1992-01-01

    The behaviour under irradiation of a single mode fiber heavily doped with germanium has been investigated at 0.85 μm and 1.3 μm under different irradiation temperatures in the range from -65degC to 60degC. The time behaviour of the recovery of the induced attenuation has been described using empirical equations, for different temperatures. An nth order kinetics seems appropriate to describe the results and the order of kinetics has been determined at different temperatures. (orig.)

  11. Toward deep blue nano hope diamonds: heavily boron-doped diamond nanoparticles.

    Science.gov (United States)

    Heyer, Steffen; Janssen, Wiebke; Turner, Stuart; Lu, Ying-Gang; Yeap, Weng Siang; Verbeeck, Jo; Haenen, Ken; Krueger, Anke

    2014-06-24

    The production of boron-doped diamond nanoparticles enables the application of this material for a broad range of fields, such as electrochemistry, thermal management, and fundamental superconductivity research. Here we present the production of highly boron-doped diamond nanoparticles using boron-doped CVD diamond films as a starting material. In a multistep milling process followed by purification and surface oxidation we obtained diamond nanoparticles of 10-60 nm with a boron content of approximately 2.3 × 10(21) cm(-3). Aberration-corrected HRTEM reveals the presence of defects within individual diamond grains, as well as a very thin nondiamond carbon layer at the particle surface. The boron K-edge electron energy-loss near-edge fine structure demonstrates that the B atoms are tetrahedrally embedded into the diamond lattice. The boron-doped diamond nanoparticles have been used to nucleate growth of a boron-doped diamond film by CVD that does not contain an insulating seeding layer.

  12. Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes

    Science.gov (United States)

    Ullah, A. R.; Carrad, D. J.; Krogstrup, P.; Nygârd, J.; Micolich, A. P.

    2018-02-01

    Doping is a common route to reducing nanowire transistor on-resistance but it has limits. A high doping level gives significant loss in gate performance and ultimately complete gate failure. We show that electrolyte gating remains effective even when the Be doping in our GaAs nanowires is so high that traditional metal-oxide gates fail. In this regime we obtain a combination of subthreshold swing and contact resistance that surpasses the best existing p -type nanowire metal-oxide semiconductor field-effect transistors (MOSFETs). Our subthreshold swing of 75 mV/dec is within 25 % of the room-temperature thermal limit and comparable with n -InP and n -GaAs nanowire MOSFETs. Our results open a new path to extending the performance and application of nanowire transistors, and motivate further work on improved solid electrolytes for nanoscale device applications.

  13. Features of the band structure and conduction mechanisms of n-HfNiSn heavily doped with Y

    Energy Technology Data Exchange (ETDEWEB)

    Romaka, V. A., E-mail: vromaka@polynet.lviv.ua [National Academy of Sciences of Ukraine, Pidstryhach Institute for Applied Problems of Mechanics and Mathematics (Ukraine); Rogl, P. [Universitet Wien, Institut für Physikalische Chemie (Austria); Romaka, V. V. [National University “Lvivska Politechnika” (Ukraine); Kaczorowski, D. [Polish Academy of Sciences, Institute of Low Temperature and Structure Research (Poland); Krayovskyy, V. Ya. [National University “Lvivska Politechnika” (Ukraine); Stadnyk, Yu. V.; Horyn, A. M. [Ivan Franko Lviv National University (Ukraine)

    2017-02-15

    The crystalline and electronic structures, energy, kinetic, and magnetic characteristics of n-HfNiSn semiconductor heavily doped with Y acceptor impurity are studied in the ranges: T = 80–400 K, N{sub A}{sup Y} ≈ 1.9 × 10{sup 20}–5.7 × 10{sup 21} cm{sup –3} (x = 0.01–0.30), and H ≤ 10 kG. The nature of the mechanism of structural defect generation is determined, which leads to a change in the band gap and the degree of semiconductor compensation, the essence of which is the simultaneous reduction and elimination of structural donor-type defects as a result of the displacement of ~1% of Ni atoms from the Hf (4a) site, and the generation of structural acceptor-type defects by substituting Hf atoms with Y atoms at the 4a site. The results of calculations of the electronic structure of Hf{sub 1–x}Y{sub x}NiSn are in agreement with the experimental data. The discussion is performed within the Shklovskii–Efros model of a heavily doped and compensated semiconductor.

  14. Electronic transport in heavily doped Ag/n-Si composite films

    Directory of Open Access Journals (Sweden)

    Clayton W. Bates Jr.

    2013-10-01

    Full Text Available Hall measurements characterized Ag/n-Si composite films 1 micron thick produced by magnetron co-sputtering onto high resistivity Si (111 substrates at 550°C. The targets were Ag and n-type Si doped with 3 × 1019/cm3 of antimony. Films were prepared with 13, 16 and 22 at. % Ag and measured over a temperature range 77–500°K. Conduction takes place at low temperatures by variable rang hopping in localized states at the Fermi level and by thermal activation over grain boundaries at higher temperatures. The Log Resistivity vs 1/kT curves for the three Ag concentrations vary in a similar manner, but decrease in magnitude with increasing Ag due to the smaller number of grain boundaries between Ag nanoparticles occurring with increasing Ag concentration. At low temperatures Hall mobilities are essentially independent of temperature as the carrier densities for the three Ag concentrations are constant from 77 to slightly under 300°K with resistivities varying by small amounts. The mobilities at all Ag concentrations increase with temperature and approach each other as the effects of grain boundaries become less important. This work presents for the first time the effects of metal particles embedded in a semiconductor on the transport properties of carriers in the semiconductor. Though these effects are for a given average particle size most of the results are expected to hold over a range of particle sizes. Free electrons produced in films containing 13 and 16 at. % Ag result in concentrations of 1.5 × 1019/cm3, one half the antimony doping, while those with 22 at. % Ag, the carrier concentrations are three orders of magnitude higher. These constant carrier concentrations are due to the metal-insulator transition that occurs in doped crystalline and polycrystalline silicon for carrier densities nc >3.9 × 1018/cm3. The three orders of magnitude higher carrier concentration produced in films with 22 at. % Ag is argued to be due to doping of the Si

  15. Optical Gaps in Pristine and Heavily Doped Silicon Nanocrystals: DFT versus Quantum Monte Carlo Benchmarks.

    Science.gov (United States)

    Derian, R; Tokár, K; Somogyi, B; Gali, Á; Štich, I

    2017-12-12

    We present a time-dependent density functional theory (TDDFT) study of the optical gaps of light-emitting nanomaterials, namely, pristine and heavily B- and P-codoped silicon crystalline nanoparticles. Twenty DFT exchange-correlation functionals sampled from the best currently available inventory such as hybrids and range-separated hybrids are benchmarked against ultra-accurate quantum Monte Carlo results on small model Si nanocrystals. Overall, the range-separated hybrids are found to perform best. The quality of the DFT gaps is correlated with the deviation from Koopmans' theorem as a possible quality guide. In addition to providing a generic test of the ability of TDDFT to describe optical properties of silicon crystalline nanoparticles, the results also open up a route to benchmark-quality DFT studies of nanoparticle sizes approaching those studied experimentally.

  16. Direct Current Sputter Epitaxy of Heavily Doped p+ Layer for Monocrystalline Si Solar Cells

    Directory of Open Access Journals (Sweden)

    Wenchang Yeh

    2017-01-01

    Full Text Available Sputter epitaxy of p+ layer for fabrication of Si solar cells (SCs was demonstrated. Hall carrier concentration of p+ layer was 2.6 × 1020 cm−3 owing to cosputtering of B with Si at low temperature, which had enabled heavy and shallow p+ dope layer. p+nn+ SCs were fabricated and influence of p+ and n+ layers was investigated. Internal quantum efficiency (IQE of p+nn+ SCs was 95% at visible light and was larger than 60% at ultraviolet (UV light when the p+ layer was thinner than 30 nm. At near infrared (NIR, extra increment on IQE was achieved by rear n+ back surface field (BSF layer with a thickness thinner than 100 nm.

  17. Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Ho-young [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of); LG Display R and D Center, 245 Lg-ro, Wollong-myeon, Paju-si, Gyeonggi-do 413-811 (Korea, Republic of); Lee, Bok-young; Lee, Young-jang; Lee, Jung-il; Yang, Myoung-su; Kang, In-byeong [LG Display R and D Center, 245 Lg-ro, Wollong-myeon, Paju-si, Gyeonggi-do 413-811 (Korea, Republic of); Mativenga, Mallory; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of)

    2014-01-13

    We report thermally stable coplanar amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with heavily doped n{sup +} a-IGZO source/drain regions. Doping is through He plasma treatment in which the resistivity of the a-IGZO decreases from 2.98 Ω cm to 2.79 × 10{sup −3} Ω cm after treatment, and then it increases to 7.92 × 10{sup −2} Ω cm after annealing at 300 °C. From the analysis of X-ray photoelectron spectroscopy, the concentration of oxygen vacancies in He plasma treated n{sup +}a-IGZO does not change much after thermal annealing at 300 °C, indicating thermally stable n{sup +} a-IGZO, even for TFTs with channel length L = 4 μm. Field-effect mobility of the coplanar a-IGZO TFTs with He plasma treatment changes from 10.7 to 9.2 cm{sup 2}/V s after annealing at 300 °C, but the performance of the a-IGZO TFT with Ar or H{sub 2} plasma treatment degrades significantly after 300 °C annealing.

  18. Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

    International Nuclear Information System (INIS)

    Jeong, Ho-young; Lee, Bok-young; Lee, Young-jang; Lee, Jung-il; Yang, Myoung-su; Kang, In-byeong; Mativenga, Mallory; Jang, Jin

    2014-01-01

    We report thermally stable coplanar amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with heavily doped n + a-IGZO source/drain regions. Doping is through He plasma treatment in which the resistivity of the a-IGZO decreases from 2.98 Ω cm to 2.79 × 10 −3 Ω cm after treatment, and then it increases to 7.92 × 10 −2 Ω cm after annealing at 300 °C. From the analysis of X-ray photoelectron spectroscopy, the concentration of oxygen vacancies in He plasma treated n + a-IGZO does not change much after thermal annealing at 300 °C, indicating thermally stable n + a-IGZO, even for TFTs with channel length L = 4 μm. Field-effect mobility of the coplanar a-IGZO TFTs with He plasma treatment changes from 10.7 to 9.2 cm 2 /V s after annealing at 300 °C, but the performance of the a-IGZO TFT with Ar or H 2 plasma treatment degrades significantly after 300 °C annealing

  19. Prospective high thermoelectric performance of the heavily p-doped half-Heusler compound CoVSn

    International Nuclear Information System (INIS)

    Shi, Hongliang; Ming, Wenmei; Parker, David S.; Du, Mao-Hua; Singh, David J.

    2017-01-01

    The electronic structure and transport properties of the half-Heusler compound CoVSn are studied in this paper systematically by combining first-principles electronic structure calculations and Boltzmann transport theory. The band structure at the valence-band edge is complex with multiple maxima derived from hybridized transition element d states. The result is a calculated thermopower larger than 200 μV /Κ within a wide range of doping concentrations and temperatures for heavily doped p-type CoVSn. The thermoelectric properties additionally benefit from the corrugated shapes of the hole pockets in our calculated isoenergy surfaces. Our calculated power factor S"2σ/τ (with respect to an average unknown scattering time) of CoVSn is comparable to that of FeNbSb. A smaller lattice thermal conductivity can be expected from the smaller group velocities of acoustical modes compared to FeNbSb. Finally, overall, good thermoelectric performance for CoVSn can be expected by considering the electronic transport and lattice thermal conductivity.

  20. Lifetime studies of self-activated photoluminescence in heavily silicon-doped GaAs

    Science.gov (United States)

    Sauncy, T.; Palsule, C. P.; Holtz, M.; Gangopadhyay, S.; Massie, S.

    1996-01-01

    We report results of a detailed temperature dependence study of photoluminescence lifetime and continuous emission properties in silicon-doped GaAs. The primary focus is on a defect-related emission at 1.269 eV (T=20 K). GaAs crystals were grown using molecular-beam epitaxy with most of the experiments conducted on a sample having a carrier concentration of 4.9×1018 cm-3. The intensity is seen to decrease above 100 K, with no corresponding decrease in the measured lifetime of 9.63+/-0.25 ns. The intensity decrease implies an activation energy of 19+/-2 meV, which is approximately one order of magnitude smaller than what was previously obtained for similar defects in Czochralski-grown GaAs with other dopants. We interpret our results in terms of a configuration coordinate model and obtain a more complete picture of the energy-level structure. The experiments indicate that the upper level in the recombination process is about 20 meV below the conduction-band continuum, with the lower state approximately 300 meV above the valence band. Our results are consistent with the identification of the corresponding defect complex microstructure as being a silicon-at-gallium substitution, weakly interacting with a gallium vacancy second-nearest neighbor, known as the Si-Y defect complex.

  1. Cathodoluminescence studies of anomalous ion implantation defect introduction in lightly and heavily doped liquid phase epitaxial GaAs:Sn

    International Nuclear Information System (INIS)

    Norris, C.B.; Barnes, C.E.

    1980-01-01

    The anomalous postrange defect introduction produced by shallow ion implantation in GaAs has been investigated in Sn-doped liquid phase epitaxial (LPE) material using depth-resolved cathodoluminescence in conjunction with layer removal by chemical etching. 100-keV Ne + or 200-keV Zn + ions were implanted into lightly or heavily Sn-doped LPE layers at temperatures between 80 and 300 K. All implantations were subsequently annealed at 300 K. Although the projected ion ranges for the implants were on the order of 1000 A, significant postrange damage was observed at far greater depths. At depths up to several microns, the damage introduction produced severe nonradiative recombination but simultaneously caused an apparent increase in the concentration of incumbent luminescence centers responsible for an extrinsic band near 1.39 eV. A weak damage-related band near 1.2 eV could also be seen in one instance. At depths of 5--30 μm, the postrange damage had the opposite effect of annihilating incumbent 1.39-eV luminescence centers. The efficiency of the damage introduction has a complicated temperature dependence which is significantly different for the ion/substrate combinations investigated. However, no conditions were found for which the damage introduction could be inhibited. While our measurements are the most extensive to date concerning the anomalous ion implant damage introduction in GaAs, the detailed mechanisms responsible for this effect still remain obscure owing in part to the limited understanding of defects in GaAs

  2. Contribution to the study, by magnetic resonance, of the properties of heavily doped silicon at low temperature

    International Nuclear Information System (INIS)

    Jerome, D.

    1965-10-01

    The magnetic properties of heavily doped silicon at low temperature have been studied in a range of concentration on either side of the Mott transition. For impurity densities less than that of the transition a magnetic double resonance method allows the exchange coupling between localized donors to be measured, and in addition the existence of paramagnetic centers (pairs of neutral and ionized donors) is demonstrated. The behaviour of the spin-lattice relaxation of 29 Ci is explained in terms of the dipolar coupling between nuclei and paramagnetic centers. In the range of concentration 10 16 -10 17 impurities/cm 3 , the concentration dependent relaxation of donors is studied experimentally. A theoretical explanation is proposed for the latter mechanism, the basis of which is the presence of ionized pairs of donors. At increasing impurity concentrations the electronic delocalization increases. For the concentration of 2.5 X 10 18 P/cm 3 the hyperfine coupling is responsible for the 29 Si relaxation. It is shown that the electron density has a very large maximum near the impurities in the metallic domain of concentrations. An estimation of the impurity band width (19 deg. K) is deduced from the measurement of the paramagnetic part of the electronic susceptibility at low temperature. (author) [fr

  3. Surface modification by vacuum annealing for field emission from heavily phosphorus-doped homoepitaxial (1 1 1) diamond

    International Nuclear Information System (INIS)

    Yamada, Takatoshi; Nebel, Christoph E.; Somu, Kumaragurubaran; Shikata, Shin-ichi

    2008-01-01

    The relationship between field emission properties and C 1s core level shifts of heavily phosphorus-doped homoepitaxial (1 1 1) diamond is investigated as a function of annealing temperature in order to optimize surface carbon bonding configurations for device applications. A low field emission threshold voltage is observed from surfaces annealed at 800 deg. C for hydrogen-plasma treated surface, while a low field emission threshold voltage of wet-chemical oxidized surface is observed after annealing at 900 deg. C. The C 1s core level by X-ray photoelectron spectroscopy (XPS) showed a shoulder peak at 1 eV below the main peak over 800 and 900 deg. C annealing temperature for hydrogen-plasma treated and wet-chemical oxidized surfaces, respectively. When the shoulder peak intensity is less than 10% of the main peak intensity, lower threshold voltages are observed. This is due to the carbon-reconstruction which gives rise to a small positive electron affinity. By increasing annealing temperature, the shoulder peak ratios also increase, which indicates that a surface graphitization takes place. This leads to higher threshold voltages

  4. Heavily doped n-type a-IGZO by F plasma treatment and its thermal stability up to 600 °C

    Science.gov (United States)

    Um, Jae Gwang; Jang, Jin

    2018-04-01

    We report the electrical properties and thermal stability of heavily doped, amorphous indium-gallium-zinc-oxide (a-IGZO) treated with fluorine (F) plasma. When the F doping concentration in a-IGZO is 17.51 × 1021/cm-3, the a-IGZO exhibits a carrier concentration of 6 × 1019 cm-3, a resistivity of 3 × 10-3 Ω cm, and a Hall mobility of 20 cm2/V s. This indicates that F is a suitable n-type dopant in a-IGZO. The similarity of the ionic radius of F to that of oxygen (O) allows substitutional doping by replacing O with F or the occupation of the oxygen vacancy (VO) site by F and consequent reduction in defect density. The semiconducting property of a-IGZO can change into metallic behavior by F doping. The defect passivation by F incorporation is confirmed by the XPS depth profile, which reveals the significant reduction in the VO concentration due to the formation of In-F bonds. The heavily doped a-IGZO exhibits thermally stable conductivity up to 600 °C annealing and thus can be widely used for the ohmic contact of a-IGZO devices.

  5. High Thermoelectric Performance by Convergence of Bands in IV-VI Semiconductors, Heavily Doped PbTe, and Alloys/Nanocomposites

    Science.gov (United States)

    Snyder, G. Jeffrey (Inventor); Pei, Yanzhong (Inventor)

    2015-01-01

    The present invention teaches an effective mechanism for enhancing thermoelectric performance through additional conductive bands. Using heavily doped p-PbTe materials as an example, a quantitative explanation is disclosed, as to why and how these additional bands affect the figure of merit. A high zT of approaching 2 at high temperatures makes these simple, likely more stable (than nanostructured materials) and Tl-free materials excellent for thermoelectric applications.

  6. Near-Field Imaging of Free Carriers in ZnO Nanowires with a Scanning Probe Tip Made of Heavily Doped Germanium

    Science.gov (United States)

    Sakat, Emilie; Giliberti, Valeria; Bollani, Monica; Notargiacomo, Andrea; Pea, Marialilia; Finazzi, Marco; Pellegrini, Giovanni; Hugonin, Jean-Paul; Weber-Bargioni, Alexander; Melli, Mauro; Sassolini, Simone; Cabrini, Stefano; Biagioni, Paolo; Ortolani, Michele; Baldassarre, Leonetta

    2017-11-01

    A novel scanning probe tip made of heavily doped semiconductor is fabricated and used instead of standard gold-coated tips in infrared scattering-type near-field microscopy. Midinfrared near-field microscopy experiments are conducted on ZnO nanowires with a lateral resolution better than 100 nm, using tips made of heavily electron-doped germanium with a plasma frequency in the midinfrared (plasma wavelength of 9.5 μ m ). Nanowires embedded in a dielectric matrix are imaged at two wavelengths, 11.3 and 8.0 μ m , above and below the plasma wavelength of the tips. An opposite sign of the imaging contrasts between the nanowire and the dielectric matrix is observed at the two infrared wavelengths, indicating a clear role of the free-electron plasma in the heavily doped germanium tip in building the imaging contrast. Electromagnetic simulations with a multispherical dipole model accounting for the finite size of the tip are well consistent with the experiments. By comparison of the simulated and measured imaging contrasts, an estimate for the local free-carrier density in the investigated ZnO nanowires in the low 1019 cm-3 range is retrieved. The results are benchmarked against the scattering intensity and phase maps obtained on the same sample with a gold-coated probe tip in pseudoheterodyne detection mode.

  7. Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN

    International Nuclear Information System (INIS)

    Wu, L L; Zhao, D G; Jiang, D S; Chen, P; Le, L C; Li, L; Liu, Z S; Zhang, S M; Zhu, J J; Wang, H; Zhang, B S; Yang, H

    2013-01-01

    The growth condition of thin heavily Mg-doped GaN capping layer and its effect on ohmic contact formation of p-type GaN were investigated. It is confirmed that the excessive Mg doping can effectively enhance the Ni/Au contact to p-GaN after annealing at 550 °C. When the flow rate ratio between Mg and Ga gas sources is 6.4% and the layer width is 25 nm, the capping layer grown at 850 °C exhibits the best ohmic contact properties with respect to the specific contact resistivity (ρ c ). This temperature is much lower than the conventional growth temperature of Mg-doped GaN, suggesting that the deep-level-defect induced band may play an important role in the conduction of capping layer. (paper)

  8. Heavily Graphitic-Nitrogen Self-doped High-porosity Carbon for the Electrocatalysis of Oxygen Reduction Reaction

    Science.gov (United States)

    Feng, Tong; Liao, Wenli; Li, Zhongbin; Sun, Lingtao; Shi, Dongping; Guo, Chaozhong; Huang, Yu; Wang, Yi; Cheng, Jing; Li, Yanrong; Diao, Qizhi

    2017-11-01

    Large-scale production of active and stable porous carbon catalysts for oxygen reduction reaction (ORR) from protein-rich biomass became a hot topic in fuel cell technology. Here, we report a facile strategy for synthesis of nitrogen-doped porous nanocarbons by means of a simple two-step pyrolysis process combined with the activation of zinc chloride and acid-treatment process, in which kidney bean via low-temperature carbonization was preferentially adopted as the only carbon-nitrogen sources. The results show that this carbon material exhibits excellent ORR electrocatalytic activity, and higher durability and methanol-tolerant property compared to the state-of-the-art Pt/C catalyst for the ORR, which can be mainly attributed to high graphitic-nitrogen content, high specific surface area, and porous characteristics. Our results can encourage the synthesis of high-performance carbon-based ORR electrocatalysts derived from widely-existed natural biomass.

  9. Improvement on p-type CVD diamond semiconducting properties by fabricating thin heavily-boron-doped multi-layer clusters isolated each other in unintentionally boron-doped diamond layer

    Science.gov (United States)

    Maida, Osamu; Tabuchi, Tomohiro; Ito, Toshimichi

    2017-12-01

    We have developed a new fabrication process to decrease the effective activation energy of B atoms doped in diamond without a significant decrease in the carrier mobility by fabricating heavily B-doped clusters with very low mobility which are embedded in lightly-B-doped diamond layers. The resistivities of the heavily B-doped and unintentionally B-doped diamond stacked layers had almost no temperature dependence, suggesting the presence of an impurity-band conduction in these diamond layers. On the other hand, the resistivities of the samples after the embedding growth process of the stacked layers that had been appropriately divided to innumerable small clusters by means of a suitable etching process increased with decreasing the temperature from 330 to 130 K. The effective activation energies and Hall mobilities at room temperature of both samples were estimated to be 0.21 eV, 106 cm2 V-1 s-1 for micron-sized clusters and 0.23 eV, 470 cm2 V-1 s-1 for nano-sized clusters, respectively, indicating that the diamond film structure fabricated in this work is effective for the improvement of the p-type performance for the B-doped CVD diamond.

  10. Carrier compensation mechanism in heavily Nb-doped anatase Ti{sub 1-x}Nb{sub x}O{sub 2+{delta}} epitaxial thin films

    Energy Technology Data Exchange (ETDEWEB)

    Nogawa, H; Chikamatsu, A; Hirose, Y; Hasegawa, T [Department of Chemistry, University of Tokyo, Tokyo 113-0033 (Japan); Nakao, S [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Kumigashira, H; Oshima, M, E-mail: chikamatsu@chem.s.u-tokyo.ac.jp [Department of Applied Chemistry, University of Tokyo, Tokyo 113-8656 (Japan)

    2011-09-14

    We investigated the electronic structures of anatase Ti{sub 1-x}Nb{sub x}O{sub 2+{delta}} (TNO) thin films as a function of Nb concentration x using photoemission spectroscopy (PES) measurements to elucidate the origin of the abrupt decrease in carrier activation in heavily Nb-doped regime. The existing intensity ratio of Nb{sup 5+} evaluated from Nb 3d core-level PES spectra maintained a constant value of {approx}0.8 at x = 0.06-0.3, implying that electron carriers generated by Nb doping are compensated by p-type defects. Ti 2p-3d and O1s-2p resonant PES measurements of x = 0.06-0.3 films revealed that the in-gap states positioned {approx}1 eV below the Fermi level (E{sub F}) have a mixed character of Ti 3d and O 2p orbitals, whereas the states at E{sub F} mainly have a Ti 3d nature. We proposed a carrier compensation mechanism that interstitial oxygen atoms strongly combined with surrounding Nb atoms kill conduction electrons in heavily Nb-doped anatase TiO{sub 2}.

  11. Photovoltaic investigation of minority carrier lifetime in the heavily-doped emitter layer of silicon junction solar cell

    Science.gov (United States)

    Ho, C.-T.

    1982-01-01

    The results of experiments on the recombination lifetime in a phosphorus diffused N(+) layer of a silicon solar cell are reported. The cells studied comprised three groups of Czochralski grown crystals: boron doped to one ohm-cm, boron doped to 6 ohm-cm, and aluminum doped to one ohm-cm, all with a shunt resistance exceeding 500 kilo-ohms. The characteristic bulk diffusion length of a cell sample was determined from the short circuit current response to light at a wavelength of one micron. The recombination rates were obtained by measurement of the open circuit voltage as a function of the photogeneration rate. The recombination rate was found to be dependent on the photoinjection level, and is positive-field controlled at low photoinjection, positive-field influence Auger recombination at a medium photoinjection level, and negative-field controlled Auger recombination at a high photoinjection level.

  12. Hydrogen-boron complexes in heavily boron-doped silicon treated with high concentration of hydrogen atoms

    International Nuclear Information System (INIS)

    Fukata, N.; Fukuda, S.; Sato, S.; Ishioka, K.; Kitajima, M.; Hishita, S.; Murakami, K.

    2006-01-01

    The formation of hydrogen (H)-related complexes was investigated in boron (B)-doped Si treated with high concentration of H. The isotope shifts of H-related Raman peaks by replacement of H to deuterium and 1 B to 11 B clearly showed the formation of the B-H complexes in which H directly bonds to B in Si. The results of the resistivity measurements suggested that the B acceptors are passivated via the formation of the B-H complexes, as well as the well-known passivation center in B-doped Si, namely, H-B passivation center

  13. Spin-Glass Transition and Giant Paramagnetism in Heavily Hole-Doped Bi2Sr2Co2Oy

    Science.gov (United States)

    Hsu, Hung Chang; Lee, Wei-Li; Lin, Jiunn-Yuan; Young, Ben-Li; Kung, Hsiang-Hsi; Huang, Jian; Chou, Fang Cheng

    2014-02-01

    Hole-doped single crystals of misfit-layered cobaltate Bi2-xPbxSr2-zCo2Oy (x = 0-0.61, y = 8.28-8.62, and z = 0.01-0.22) have been successfully grown using the optical floating-zone method. Heavier hole doping has been achieved through both Pb substitution in the Bi site and the more effective Sr vacancy formation. The Co4+ : Co3+ ratio can be raised significantly from its original ˜1 : 1 to 4.5 : 1, as confirmed by iodometric titration. A spin-glass transition temperature of Tg ˜ 70 K is confirmed by ac susceptibility measurement when the Co4+ : Co3+ ratio becomes higher than 2 : 1, presumably owing to the significantly increased probability of triangular geometrical frustration among antiferromagnetically coupled localized Co4+ spins.

  14. Thermal equilibrium concentration of intrinsic point defects in heavily doped silicon crystals - Theoretical study of formation energy and formation entropy in area of influence of dopant atoms-

    Science.gov (United States)

    Kobayashi, K.; Yamaoka, S.; Sueoka, K.; Vanhellemont, J.

    2017-09-01

    It is well known that p-type, neutral and n-type dopants affect the intrinsic point defect (vacancy V and self-interstitial I) behavior in single crystal Si. By the interaction with V and/or I, (1) growing Si crystals become more V- or I-rich, (2) oxygen precipitation is enhanced or retarded, and (3) dopant diffusion is enhanced or retarded, depending on the type and concentration of dopant atoms. Since these interactions affect a wide range of Si properties ranging from as-grown crystal quality to LSI performance, numerical simulations are used to predict and to control the behavior of both dopant atoms and intrinsic point defects. In most cases, the thermal equilibrium concentrations of dopant-point defect pairs are evaluated using the mass action law by taking only the binding energy of closest pair to each other into account. The impacts of dopant atoms on the formation of V and I more distant than 1st neighbor and on the change of formation entropy are usually neglected. In this study, we have evaluated the thermal equilibrium concentrations of intrinsic point defects in heavily doped Si crystals. Density functional theory (DFT) calculations were performed to obtain the formation energy (Ef) of the uncharged V and I at all sites in a 64-atom supercell around a substitutional p-type (B, Ga, In, and Tl), neutral (C, Ge, and Sn) and n-type (P, As, and Sb) dopant atom. The formation (vibration) entropies (Sf) of free I, V and I, V at 1st neighboring site from B, C, Sn, P and As atoms were also calculated with the linear response method. The dependences of the thermal equilibrium concentrations of trapped and total intrinsic point defects (sum of free I or V and I or V trapped with dopant atoms) on the concentrations of B, C, Sn, P and As in Si were obtained. Furthermore, the present evaluations well explain the experimental results of the so-called ;Voronkov criterion; in B and C doped Si, and also the observed dopant dependent void sizes in P and As doped Si

  15. Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability

    CERN Document Server

    Pereira, LMC; Correia, JG; Decoster, S; da Silva, MR; Araújo, JP; Vantomme, A

    2011-01-01

    We report on the lattice location of Mn in heavily p-type doped GaAs by means of $\\beta^{-}$-emission channeling from the decay of $^{56}$Mn. The majority of the Mn atoms substitute for Ga and up to 31% occupy the tetrahedral interstitial site with As nearest neighbors. Contrary to the general belief, we find that interstitial Mn is immobile up to 400$^{\\circ}$C, with an activation energy for diffusion of 1.7–2.3 eV. Such high thermal stability of interstitial Mn has significant implications on the strategies and prospects for achieving room temperature ferromagnetism in Ga$_{1−x}$Mn$_{x}$As.

  16. Ion-channeling analysis of As relocation in heavily doped Si:As irradiated with high-energy ions

    International Nuclear Information System (INIS)

    Lulli, G.; Albertazzi, E.; Bianconi, M.; Ferri, M.

    2003-01-01

    Silicon on insulator layers doped with 8x10 20 As cm -3 and thermally equilibrated at 1100 deg. C, have been irradiated with 2 MeV Si + ions. Rutherford backscattering-channeling analysis shows an increase in As disorder upon irradiation significantly larger than the increase in Si disorder, while electrical measurements show a large decrease in electrical activation. Monte Carlo simulation of channeling angular scans suggests that the enhanced As disorder effect is due to the preferential relocation of dopant atoms slightly displaced from lattice sites, which appear the main reason responsible for the electrical deactivation in the unirradiated sample and are believed to be in the form of As-vacancy clusters. Upon 600 deg. C 15 s annealing, the As atoms randomly relocated by ion irradiation almost completely recover their original configuration, probably capturing vacancies and forming, again, the complexes dissociated by ion irradiation

  17. Estimation of free carrier concentrations in high-quality heavily doped GaN:Si micro-rods by photoluminescence and Raman spectroscopy

    Science.gov (United States)

    Mohajerani, M. S.; Khachadorian, S.; Nenstiel, C.; Schimpke, T.; Avramescu, A.; Strassburg, M.; Hoffmann, A.; Waag, A.

    2016-03-01

    The controlled growth of highly n-doped GaN micro rods is one of the major challenges in the fabrication of recently developed three-dimensional (3D) core-shell light emitting diodes (LEDs). In such structures with a large active area, higher electrical conductivity is needed to achieve higher current density. In this contribution, we introduce high quality heavily-doped GaN:Si micro-rods which are key elements of the newly developed 3D core-shell LEDs. These structures were grown by metal-organic vapor phase epitaxy (MOVPE) using selective area growth (SAG). We employed spatially resolved micro-Raman and micro-photoluminescence (PL) in order to directly determine a free-carrier concentration profile in individual GaN micro-rods. By Raman spectroscopy, we analyze the low-frequency branch of the longitudinal optical (LO)-phonon-plasmon coupled modes and estimate free carrier concentrations from ≍ 2.4 × 1019 cm-3 up to ≍ 1.5 × 1020 cm-3. Furthermore, free carrier concentrations are determined by estimating Fermi energy level from the near band edge emission measured by low-temperature PL. The results from both methods reveal a good consistency.

  18. Influence of quantum confinement on the carrier contribution to the elastic constants in quantum confined heavily doped non-linear optical and optoelectronic materials: simplified theory and the suggestion for experimental determination

    International Nuclear Information System (INIS)

    Baruah, D; Choudhury, S; Singh, K M; Ghatak, K P

    2007-01-01

    In this paper we study the carrier contribution to elastic constants in quantum confined heavily doped non-linear optical compounds on the basis of a newly formulated electron dispersion law taking into account the anisotropies of the effective electron masses and spin orbit splitting constants together with the proper inclusion of the crystal field splitting in the Hamiltonian within the framework of k.p formalism. All the results of heavily doped three, and two models of Kane for heavily doped III-V materials form special cases of our generalized analysis. It has been found, taking different heavily doped quantum confined materials that, the carrier contribution to the elastic constants increases with increase in electron statistics and decrease in film thickness in ladder like manners for all types of quantum confinements with different numerical values which are totally dependent on the energy band constants. The said contribution is greatest in quantum dots and least in quantum wells together with the fact the heavy doping enhances the said contributions for all types of quantum confined materials. We have suggested an experimental method of determining the carrier contribution to the elastic constants in nanostructured materials having arbitrary band structures

  19. High critical currents in heavily doped (Gd,Y)Ba{sub 2}Cu{sub 3}O{sub x} superconductor tapes

    Energy Technology Data Exchange (ETDEWEB)

    Selvamanickam, V., E-mail: selva@uh.edu; Gharahcheshmeh, M. Heydari; Xu, A.; Galstyan, E.; Delgado, L. [Department of Mechanical Engineering and Texas Center for Superconductivity, University of Houston, 4800 Calhoun Rd., Houston, Texas 77204-4006 (United States); Cantoni, C. [Oak Ridge National Laboratory, Oak Ridge, Tennessee 37381 (United States)

    2015-01-19

    REBa{sub 2}Cu{sub 3}O{sub x} ((REBCO), RE = rare earth) superconductor tapes with moderate levels of dopants have been optimized for high critical current density in low magnetic fields at 77 K, but they do not exhibit exemplary performance in conditions of interest for practical applications, i.e., temperatures less than 50 K and fields of 2–30 T. Heavy doping of REBCO tapes has been avoided by researchers thus far due to deterioration in properties. Here, we report achievement of critical current densities (J{sub c}) above 20 MA/cm{sup 2} at 30 K, 3 T in heavily doped (25 mol. % Zr-added) (Gd,Y)Ba{sub 2}Cu{sub 3}O{sub x} superconductor tapes, which is more than three times higher than the J{sub c} typically obtained in moderately doped tapes. Pinning force levels above 1000 GN/m{sup 3} have also been attained at 20 K. A composition map of lift factor in J{sub c} (ratio of J{sub c} at 30 K, 3 T to the J{sub c} at 77 K, 0 T) has been developed which reveals the optimum film composition to obtain lift factors above six, which is thrice the typical value. A highly c-axis aligned BaZrO{sub 3} (BZO) nanocolumn defect density of nearly 7 × 10{sup 11 }cm{sup −2} as well as 2–3 nm sized particles rich in Cu and Zr have been found in the high J{sub c} films.

  20. Effect of Aluminum Doping on the Nanocrystalline ZnS:Al3+ Films Fabricated on Heavily-Doped p-type Si(100) Substrates by Chemical Bath Deposition Method

    Science.gov (United States)

    Zhu, He-Jie; Liang, Yan; Gao, Xiao-Yong; Guo, Rui-Fang; Ji, Qiang-Min

    2015-06-01

    Intrinsic ZnS and aluminum-doped nanocrystalline ZnS (ZnS:Al3+) films with zinc-blende structure were fabricated on heavily-doped p-type Si(100) substrates by chemical bath deposition method. Influence of aluminum doping on the microstructure, and photoluminescent and electrical properties of the films, were intensively investigated. The average crystallite size of the films varying in the range of about 9.0 ˜ 35.0 nm initially increases and then decreases with aluminum doping contents, indicating that the crystallization of the films are initially enhanced and then weakened. The incorporation of Al3+ was confirmed from energy dispersive spectrometry and the induced microstrain in the films. Strong and stable visible emission band resulting from the defect-related light emission were observed for the intrinsic ZnS and ZnS:Al3+ films at room temperature. The photoluminescence related to the aluminum can annihilate due to the self-absorption of ZnS:Al3+ when the Al3+ content surpasses certain value. The variation of the resistivity of the films that initially reduces and then increases is mainly caused by the partial substitute for Zn2+ by Al3+ as well as the enhanced crystallization, and by the enhanced crystal boundary scattering, respectively.

  1. Conductivity and superconductivity in heavily vacant diamond

    Directory of Open Access Journals (Sweden)

    S A Jafari

    2009-08-01

    Full Text Available   Motivated by the idea of impurity band superconductivity in heavily Boron doped diamond, we investigate the doping of various elements into diamond to address the question, which impurity band can offer a better DOS at the Fermi level. Surprisingly, we find that the vacancy does the best job in producing the largest DOS at the Fermi surface. To investigate the effect of disorder in Anderson localization of the resulting impurity band, we use a simple tight-binding model. Our preliminary study based on the kernel polynomial method shows that the impurity band is already localized at the concentration of 10-3. Around the vacancy concentration of 0.006 the whole spectrum of diamond becomes localized and quantum percolation takes place. Therefore to achieve conducting bands at concentrations on the scale of 5-10 percent, one needs to introduce correlations such as hopping among the vacancies .

  2. Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

    International Nuclear Information System (INIS)

    Li Xiao-Jing; Zhao De-Gang; Jiang De-Sheng; Chen Ping; Zhu Jian-Jun; Liu Zong-Shun; Yang Jing; He Xiao-Guang; Yang Hui; Zhang Li-Qun; Zhang Shu-Ming; Le Ling-Cong; Liu Jian-Ping

    2015-01-01

    The influence of a deep-level-defect (DLD) band formed in a heavily Mg-doped GaN contact layer on the performance of Ni/Au contact to p-GaN is investigated. The thin heavily Mg-doped GaN (p ++ -GaN) contact layer with DLD band can effectively improve the performance of Ni/Au ohmic contact to p-GaN. The temperature-dependent I–V measurement shows that the variable-range hopping (VRH) transportation through the DLD band plays a dominant role in the ohmic contact. The thickness and Mg/Ga flow ratio of p ++ -GaN contact layer have a significant effect on ohmic contact by controlling the Mg impurity doping and the formation of a proper DLD band. When the thickness of the p ++ -GaN contact layer is 25 nm thick and the Mg/Ga flow rate ratio is 10.29%, an ohmic contact with low specific contact resistivity of 6.97× 10 −4 Ω·cm 2 is achieved. (paper)

  3. Inhomogeneous electronic structures in heavily Pb-doped Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub y} single crystals probed by low temperature STM/STS

    Energy Technology Data Exchange (ETDEWEB)

    Kinoda, Go; Nakao, Shoichiro; Motohashi, Teruki; Nakayama, Yuri; Shimizu, Keisuke; Shimoyama, Junichi; Kishio, Koji; Hanaguri, Tetsuo; Kitazawa, Koichi; Hasegawa, Tetsuya

    2003-05-15

    We have performed cryogenic scanning tunneling microscopy/spectroscopy (STM/STS) of heavily Pb-doped Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub y} single crystals to investigate local electronic structures in the overdoped regime. The obtained STM/STS results at 4.3 K clearly showed local inhomogeneity of gap structure {delta} ({delta}=20-60 meV) in a scale of several nm, suggesting the coexistence of superconducting and pseudogap-like regions, even in the overdoped regime.

  4. Two-band analysis of hole mobility and Hall factor for heavily carbon-doped p-type GaAs

    Science.gov (United States)

    Kim, B. W.; Majerfeld, A.

    1996-02-01

    We solve a pair of Boltzmann transport equations based on an interacting two-isotropic-band model in a general way first to get transport parameters corresponding to the relaxation time. We present a simple method to calculate effective relaxation times, separately for each band, which compensate for the inherent deficiencies in using the relaxation time concept for polar optical-phonon scattering. Formulas for calculating momentum relaxation times in the two-band model are presented for all the major scattering mechanisms of p-type GaAs for simple, practical mobility calculations. In the newly proposed theoretical framework, first-principles calculations for the Hall mobility and Hall factor of p-type GaAs at room temperature are carried out with no adjustable parameters in order to obtain direct comparisons between the theory and recently available experimental results. In the calculations, the light-hole-band nonparabolicity is taken into account on the average by the use of energy-dependent effective mass obtained from the kṡp method and valence-band anisotropy is taken partly into account by the use the Wiley's overlap function.. The calculated Hall mobilities show a good agreement with our experimental data for carbon-doped p-GaAs samples in the range of degenerate hole densities. The calculated Hall factors show rH=1.25-1.75 over hole densities of 2×1017-1×1020 cm-3.

  5. Chemical state analysis of heavily phosphorus-doped epitaxial silicon films grown on Si (1 0 0) by X-ray photoelectron spectroscopy

    Science.gov (United States)

    Lee, Minhyeong; Kim, Sungtae; Ko, Dae-Hong

    2018-06-01

    In this work, we investigated the chemical bonding states in highly P-doped Si thin films epitaxially grown on Si (0 0 1) substrates using high-resolution X-ray photoelectron spectroscopy (HR-XPS). HR-XPS P 2p core-level spectra clearly show spin-orbital splitting between P 2p1/2 and P 2p3/2 peaks in Si films doped with a high concentration of P. Moreover, the intensities of P 2p1/2 and P 2p3/2 peaks for P-doped Si films increase with P concentrations, while their binding energies remained almost identical. These results indicate that more P atoms are incorporated into the substitutional sites of the Si lattice with the increase of P concentrations. In order to identify the chemical states of P-doped Si films shown in XPS Si 2p spectra, the spectra of bulk Si were subtracted from those of Si:P samples, which enables us to clearly identify the new chemical state related to Sisbnd P bonds. We observed that the presence of the two well-resolved new peaks only for the Si:P samples at the binding energy higher than those of a Sisbnd Si bond, which is due to the strong electronegativity of P than that of Si. Experimental findings in this study using XPS open up new doors for evaluating the chemical states of P-doped Si materials in fundamental researches as well as in industrial applications.

  6. Evaluation of local free carrier concentrations in individual heavily-doped GaN:Si micro-rods by micro-Raman spectroscopy

    Science.gov (United States)

    Mohajerani, M. S.; Khachadorian, S.; Schimpke, T.; Nenstiel, C.; Hartmann, J.; Ledig, J.; Avramescu, A.; Strassburg, M.; Hoffmann, A.; Waag, A.

    2016-02-01

    Three-dimensional III-nitride micro-structures are being developed as a promising candidate for the future opto-electrical devices. In this study, we demonstrate a quick and straight-forward method to locally evaluate free-carrier concentrations and a crystalline quality in individual GaN:Si micro-rods. By employing micro-Raman mapping and analyzing lower frequency branch of A1(LO)- and E1(LO)-phonon-plasmon-coupled modes (LPP-), the free carrier concentrations are determined in axial and planar configurations, respectively. Due to a gradual doping profile along the micro-rods, a highly spatially resolved mapping on the sidewall is exploited to reconstruct free carrier concentration profile along the GaN:Si micro-rods. Despite remarkably high free carrier concentrations above 1 × 1020 cm-3, the micro-rods reveal an excellent crystalline quality, without a doping-induced stress.

  7. Extended X-ray absorption fine structure studies of impulsive-type hardening in the heavily Be-doped ZnSe ternaries

    Energy Technology Data Exchange (ETDEWEB)

    Khan, Shabina; Singh, Pankaja [Barkatullah University, Bhopal (India); Mazher, Javed [Addis Ababa University, Addis Ababa (Ethiopia)

    2014-02-15

    Inherently soft zinc-selenides have been hardened through beryllium doping. High-quality stoichiometric ternaries of Be{sub x}Zn{sub 1-x}Se have been synthesized by using the Bridgeman technique. State-of-art X-ray absorption spectroscopy is performed by varying the concentration of the cationic dopant, Be, from 6% to 55% in the host ZnSe. Extended X-ray absorption fine structure analyses are carried out to study the next-neighbor and next nearest neighbor atomic positions, nature of the substitutional doping, extent of bond length homogeneity, the presence of involuntary contrast among path distances, and the crossover from a soft to a hard character of the ternary with increasing Be concentration. Our results indicate the presence of a non-regular impulsive hardening in the ternary with a disparity at the lower and the higher Be-doping levels, which are discussed vis-a-vis self-accommodation of substitutional dopants in the host lattice.

  8. Strong coupling between bi-dimensional electron gas and nitrogen localized states in heavily doped GaAs1-xN x structures

    International Nuclear Information System (INIS)

    Hamdouni, A.; Bousbih, F.; Ben Bouzid, S.; Oueslati, M.; Chtourou, R.; Harmand, J.C.

    2005-01-01

    We report a low-temperature photoluminescence spectra (LTPL) of GaAs 1-x N x layers and two-dimension electron gas (2DEG) GaAs 1-x N x /AlGaAs modulation doped heterostructure grown on GaAs substrates by molecular beam epitaxy (MBE) with low nitrogen content [N] = 2 x 10 18 cm -3 . At low temperature, PL spectra of GaAs 1-x N x layers are governed by several features associate to the excitons bound to nitrogen complexes, these features disappear in (2DEG) GaAs 1-x N x /AlGaAs modulation doped heterostructure and the PL peak energy decrease with the laser power excitation. This effect is explained by the strongly coupling of the (2DEG) fundamental state with the nitrogen localized states. An activated energy of about 55 meV is deduced by photoluminescence measurements in the 10-300 K range for a laser power excitation P = 6 W/cm 2

  9. Faraday rotation and photoluminescence in heavily Tb(3+)-doped GeO2-B2O3-Al2O3-Ga2O3 glasses for fiber-integrated magneto-optics.

    Science.gov (United States)

    Gao, Guojun; Winterstein-Beckmann, Anja; Surzhenko, Oleksii; Dubs, Carsten; Dellith, Jan; Schmidt, Markus A; Wondraczek, Lothar

    2015-03-10

    We report on the magneto-optical (MO) properties of heavily Tb(3+)-doped GeO2-B2O3-Al2O3-Ga2O3 glasses towards fiber-integrated paramagnetic MO devices. For a Tb(3+) ion concentration of up to 9.7 × 10(21) cm(-3), the reported glass exhibits an absolute negative Faraday rotation of ~120 rad/T/m at 632.8 nm. The optimum spectral ratio between Verdet constant and light transmittance over the spectral window of 400-1500 nm is found for a Tb(3+) concentration of ~6.5 × 10(21) cm(-3). For this glass, the crystallization stability, expressed as the difference between glass transition temperature and onset temperature of melt crystallization exceeds 100 K, which is a prerequisite for fiber drawing. In addition, a high activation energy of crystallization is achieved at this composition. Optical absorption occurs in the NUV and blue spectral region, accompanied by Tb(3+) photoluminescence. In the heavily doped materials, a UV/blue-to-green photo-conversion gain of ~43% is achieved. The lifetime of photoluminescence is ~2.2 ms at a stimulated emission cross-section σem of ~1.1 × 10(-21) cm(2) for ~ 5.0 × 10(21) cm(-3) Tb(3+). This results in an optical gain parameter σem*τ of ~2.5 × 10(-24) cm(2)s, what could be of interest for implementation of a Tb(3+) fiber laser.

  10. Faraday rotation and photoluminescence in heavily Tb3+-doped GeO2-B2O3-Al2O3-Ga2O3 glasses for fiber-integrated magneto-optics

    Science.gov (United States)

    Gao, Guojun; Winterstein-Beckmann, Anja; Surzhenko, Oleksii; Dubs, Carsten; Dellith, Jan; Schmidt, Markus A.; Wondraczek, Lothar

    2015-01-01

    We report on the magneto-optical (MO) properties of heavily Tb3+-doped GeO2-B2O3-Al2O3-Ga2O3 glasses towards fiber-integrated paramagnetic MO devices. For a Tb3+ ion concentration of up to 9.7 × 1021 cm−3, the reported glass exhibits an absolute negative Faraday rotation of ~120 rad/T/m at 632.8 nm. The optimum spectral ratio between Verdet constant and light transmittance over the spectral window of 400–1500 nm is found for a Tb3+ concentration of ~6.5 × 1021 cm−3. For this glass, the crystallization stability, expressed as the difference between glass transition temperature and onset temperature of melt crystallization exceeds 100 K, which is a prerequisite for fiber drawing. In addition, a high activation energy of crystallization is achieved at this composition. Optical absorption occurs in the NUV and blue spectral region, accompanied by Tb3+ photoluminescence. In the heavily doped materials, a UV/blue-to-green photo-conversion gain of ~43% is achieved. The lifetime of photoluminescence is ~2.2 ms at a stimulated emission cross-section σem of ~1.1 × 10−21 cm2 for ~ 5.0 × 1021 cm−3 Tb3+. This results in an optical gain parameter σem*τ of ~2.5 × 10−24 cm2s, what could be of interest for implementation of a Tb3+ fiber laser. PMID:25754819

  11. Insertion of a pentacene layer into the gold/poly(methyl methacrylate)/heavily doped p-type Si/indium device leading to the modulation of resistive switching characteristics

    Science.gov (United States)

    Hung, Cheng-Chun; Lin, Yow-Jon

    2018-01-01

    In order to get a physical insight into the pentacene interlayer-modulated resistive switching (RS) characteristics, the Au/pentacene/poly(methyl methacrylate) (PMMA)/heavily doped p-type Si (p+-Si)/In and Au/PMMA/p+-Si/In devices are fabricated and the device performance is provided. The Au/pentacene/PMMA/p+-Si/In device shows RS behavior, whereas the Au/PMMA/p+-Si/In device exhibits the set/reset-free hysteresis current-voltage characteristics. The insertion of a pentacene layer is a noticeable contribution to the RS characteristic. This is because of the occurrence of carrier accumulation/depletion in the pentacene interlayer. The transition from carrier depletion to carrier accumulation (carrier accumulation to carrier depletion) in pentacene occurring under negative (positive) voltage induces the process of set (reset). The switching conduction mechanism is primarily described as space charge limited conduction according to the electrical transport properties measurement. The concept of a pentacene/PMMA heterostructure opens a promising direction for organic memory devices.

  12. Characteristic of doping and diffusion of heavily doped n and p type InP and InGaAs epitaxial layers grown by metal organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Pinzone, C.J.; Dupuis, R.D.; Ha, N.T.; Luftman, H.S.; Gerrard, N.D.

    1990-01-01

    Electronic and photonic device applications of the InGaAs/InP materials system often require the growth of epitaxial material doped to or near the solubility limit of the impurity in the host material. These requirements present an extreme challenge for the crystal grower. To produce devices with abrupt dopant profiles, preserve the junction during subsequent growth, and retain a high degree of crystalline perfection, it is necessary to understand the limits of dopant incorporation and the behavior of the impurity in the material. In this study, N-type doping above 10 19 cm -3 has been achieved in InP and InGaAs using Sn as a dopant. P-type Zn doping at these levels has also been achieved in these materials but p type activation above ∼3 x 10 18 cm -3 in InP has not been seen. All materials were grown by the metalorganic chemical vapor deposition (MOCVD) crystal growth technique. Effective diffusion coefficients have been measured for Zn and Sn in both materials from analysis of secondary ion mass spectra (SIMS) of specially grown and annealed samples

  13. A study of the disorder in heavily doped Ba1-xLaxF2+x by neutron scattering, ionic conductivity and specific heat measurements

    DEFF Research Database (Denmark)

    Andersen, Niels Hessel; Clausen, Kurt Nørgaard; Kjems, Jørgen

    1986-01-01

    The ionic disorder in single crystals of the fluorite-type solid solutions Ba1-xLaxF2+x (with x=0.209 and x=0.492) has been studied in the temperature range from room temperature to 800 degrees C by diffuse neutron scattering, ionic conductivity, and specific heat measurements. From the diffuse...... neutron scattering it was found that the disorder was dominated by 222 clusters, which at low temperatures (T>10-10s), in agreement with NMB results which suggest a jump frequency below 75 MHz. The temperatures at which the steepest slopes are found in the loss of correlations and in the conductivity...... coincide at approximately 650 degrees C. At this temperature no clear anomaly is observed in the specific heat. Based on these findings the authors propose a conduction mechanisms where F- ions are moving through the lattice by means of rearrangements of the 222 clusters....

  14. Preliminary Results From a Heavily Instrumented Engine Ice Crystal Icing Test in a Ground Based Altitude Test Facility

    Science.gov (United States)

    Flegel, Ashlie B.; Oliver, Michael J.

    2016-01-01

    Preliminary results from the heavily instrumented ALF502R-5 engine test conducted in the NASA Glenn Research Center Propulsion Systems Laboratory are discussed. The effects of ice crystal icing on a full scale engine is examined and documented. This same model engine, serial number LF01, was used during the inaugural icing test in the Propulsion Systems Laboratory facility. The uncommanded reduction of thrust (rollback) events experienced by this engine in flight were simulated in the facility. Limited instrumentation was used to detect icing on the LF01 engine. Metal temperatures on the exit guide vanes and outer shroud and the load measurement were the only indicators of ice formation. The current study features a similar engine, serial number LF11, which is instrumented to characterize the cloud entering the engine, detect/characterize ice accretion, and visualize the ice accretion in the region of interest. Data were acquired at key LF01 test points and additional points that explored: icing threshold regions, low altitude, high altitude, spinner heat effects, and the influence of varying the facility and engine parameters. For each condition of interest, data were obtained from some selected variations of ice particle median volumetric diameter, total water content, fan speed, and ambient temperature. For several cases the NASA in-house engine icing risk assessment code was used to find conditions that would lead to a rollback event. This study further helped NASA develop necessary icing diagnostic instrumentation, expand the capabilities of the Propulsion Systems Laboratory, and generate a dataset that will be used to develop and validate in-house icing prediction and risk mitigation computational tools. The ice accretion on the outer shroud region was acquired by internal video cameras. The heavily instrumented engine showed good repeatability of icing responses when compared to the key LF01 test points and during day-to-day operation. Other noticeable

  15. Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors

    International Nuclear Information System (INIS)

    Zheng Yuzhan; Lu Wu; Ren Diyuan; Wang Yiyuan; Wang Zhikuan; Yang Yonghui

    2010-01-01

    The characteristics of radiation damage under a high or low dose rate in lateral PNP transistors with a heavily or lightly doped emitter is investigated. Experimental results show that as the total dose increases, the base current of transistors would increase and the current gain decreases. Furthermore, more degradation has been found in lightly-doped PNP transistors, and an abnormal effect is observed in heavily doped transistors. The role of radiation defects, especially the double effects of oxide trapped charge, is discussed in heavily or lightly doped transistors. Finally, through comparison between the high- and low-dose-rate response of the collector current in heavily doped lateral PNP transistors, the abnormal effect can be attributed to the annealing of the oxide trapped charge. The response of the collector current, in heavily doped PNP transistors under high- and low-dose-rate irradiation is described in detail. (semiconductor integrated circuits)

  16. Nelfinavir and Non-Nucleoside Reverse Transcriptase Inhibitor-Based Salvage Regimes in Heavily Hiv Pretreated Patients

    Directory of Open Access Journals (Sweden)

    Jean-Guy Baril

    2003-01-01

    Full Text Available OBJECTIVE: To assess the efficacy of nelfinavir mesylate (NFV in combination with delavirdine mesylate(DLV or efavirenz (EFV and other antiretroviral agents following virological failure on other protease inhibitor (PI-based regimens.

  17. Nanoparticles doped film sensing based on terahertz metamaterials

    Science.gov (United States)

    Liu, Weimin; Fan, Fei; Chang, Shengjiang; Hou, Jiaqing; Chen, Meng; Wang, Xianghui; Bai, Jinjun

    2017-12-01

    A nanoparticles concentration sensor based on doped film and terahertz (THz) metamaterial has been proposed. By coating the nanoparticles doped polyvinyl alcohol (PVA) film on the surface of THz metamaterial, the effects of nanoparticle concentration on the metamaterial resonances are investigated through experiments and numerical simulations. Results show that resonant frequency of the metamaterial linearly decreases with the increment of doping concentration. Furthermore, numerical simulations illustrate that the redshift of resonance results from the changes of refractive index of the doped film. The concentration sensitivity of this sensor is 3.12 GHz/0.1%, and the refractive index sensitivity reaches 53.33 GHz/RIU. This work provides a non-contact, nondestructive and sensitive method for the detection of nanoparticles concentration and brings out a new application on THz film metamaterial sensing.

  18. Genetic algorithm based approach to investigate doped metal oxide materials: Application to lanthanide-doped ceria

    Science.gov (United States)

    Hooper, James; Ismail, Arif; Giorgi, Javier B.; Woo, Tom K.

    2010-06-01

    A genetic algorithm (GA)-inspired method to effectively map out low-energy configurations of doped metal oxide materials is presented. Specialized mating and mutation operations that do not alter the identity of the parent metal oxide have been incorporated to efficiently sample the metal dopant and oxygen vacancy sites. The search algorithms have been tested on lanthanide-doped ceria (L=Sm,Gd,Lu) with various dopant concentrations. Using both classical and first-principles density-functional-theory (DFT) potentials, we have shown the methodology reproduces the results of recent systematic searches of doped ceria at low concentrations (3.2% L2O3 ) and identifies low-energy structures of concentrated samarium-doped ceria (3.8% and 6.6% L2O3 ) which relate to the experimental and theoretical findings published thus far. We introduce a tandem classical/DFT GA algorithm in which an inexpensive classical potential is first used to generate a fit gene pool of structures to enhance the overall efficiency of the computationally demanding DFT-based GA search.

  19. Current Status of Doping in Japan Based on Japan Anti-Doping Disciplinary Panels of the Japan Anti-Doping Agency (JADA): A Suggestion on Anti-Doping Activities by Pharmacists in Japan.

    Science.gov (United States)

    Imanishi, Takashi; Kawabata, Takayoshi; Takayama, Akira

    2017-01-01

    In 2009, the Japan Anti-Doping Agency (JADA) established the "Sports Pharmacist Accreditation Program" to prevent doping in sports. Since then, anti-doping activities in Japan have been attracting attention. In this study, we investigated research about the current status of doping from 2007 to 2014 in Japan to make anti-doping activities more concrete, and we also discussed future anti-doping activities by pharmacists. In Japan, bodybuilding was the sporting event with the highest number and rate of doping from 2007 to 2014. Many of the positive doping cases were detected for class S1 (anabolic agents), S5 (diuretics and masking agents), and S6 (stimulants). Within class S1, supplements were the main cause of positive doping. Within class S5, medicines prescribed by medical doctors were the main cause of positive doping. Within class S6, non-prescription medicines (e.g., OTC) were the main cause of positive doping. When we looked at the global statistics on doping, many of the positive doping cases were detected for class S1. On comparing the Japanese statistics with the global statistics, the rate of positive doping caused by class S1 was significantly lower, but that caused by classes S5 and S6 was significantly higher in Japan than in the world. In conclusion, pharmacists in Japan should pay attention to class S1, S5, and S6 prohibited substances and to the sport events of bodybuilding. Based on this study, sports pharmacists as well as common pharmacists should suggest new anti-doping activities to prevent doping in the future.

  20. Heavily doped M1−xUxF2+2x fluorites studied by quasielastic neutron scattering(M=Ba) and specific heat measurements (M=Pb)

    DEFF Research Database (Denmark)

    Andersen, Niels Hessel; Clausen, Kurt Nørgaard; Kjems, Jørgen

    1983-01-01

    of doping is an increase of the thermally generated defect concentration; at high temperatures the effect is reversed. The microscopic defect structure of Ba0.9U0.1F2.2 has been studied by diffuse quasielastic neutron scattering experiments at room temperature. The experimental observations are in good......The thermal generation of defects in pure and doped Pb1−xUxF2+2x (x=0, 0.05and0.10) has been studied by specific heat measurements between 475 k and 875 k. A simple phenomenological mean field thermodynamic model has been developed and used to interpret the data. At low temperatures the result...

  1. Synthesis, characterization and potential utility of doped ceramics based catalysts

    Science.gov (United States)

    Sharma, Ritika; Yadav, Deepshikha; Singh, G. P.; Vyas, G.; Bhojak, N.

    2018-05-01

    Excessive utilization of petrol, diesel and other fossil fuels, continuous increase in their prices, and the big problem of carbon dioxide mission have encouraged scientists and technologist to find either new sources of energy or to develop technologies for the sustainable utilization of fuel. Biofuels are the only energy technologies that can resolve the problem of carbon dioxide emission in the atmosphere as well as reduce the amount of fossil fuel burned. Bio ethanol and biodiesel are the most common types of biofuel which are being used at present. Biodiesel has become more interesting for all the researchers in present scenario. Various feedstock viz. edible, nonedible oils, waste cooking oil, animal fat, algae etc, are using for the production of biodiesel worldwide according to their availability. Selection of efficient heterogeneous catalysts for biodiesel preparation still needs more attention of researchers. The present investigation deals with determination of synthesis, characterization and applications of doped ceramic based materials in different medium. Two of doped ceramic based catalysts which has been potentially used for the production of biodiesel. The Engine performance of biodiesel samples, made from industrial waste oils and ceramic based catalyst, have also been investigated and found up to satisfactory levels.

  2. Coexistence of magnetism and superconductivity in the hole doped FeAs-based superconducting compound

    International Nuclear Information System (INIS)

    Lu, T.P.; Wu, C.C.; Chou, W.H.; Lan, M.D.

    2010-01-01

    The magnetic and superconducting properties of the Sm-doped FeAs-based superconducting compound were investigated under wide ranges of temperature and magnetic field. After the systematical magnetic ion substitution, the superconducting transition temperature decreases with increasing magnetic moment. The hysteresis loop of the La 0.87-x Sm x Sr 0.13 FeAsO sample shows a superconducting hysteresis and a paramagnetic background signal. The paramagnetic signal is mainly attributed to the Sm moments. The experiment demonstrates that the coexistence of magnetism and superconductivity in the hole doped FeAs-based superconducting compounds is possible. Unlike the electron doped FeAs-based superconducting compounds SmFeAsOF, the hole doped superconductivity is degraded by the substitution of La by Sm. The hole-doped and electron-doped sides are not symmetric.

  3. High reliability EPI-base radiation hardened power transistor

    International Nuclear Information System (INIS)

    Clark, L.E.; Saltich, J.L.

    1978-01-01

    A high-voltage power transistor is described which is able to withstand fluences as high as 3 x 10 14 neutrons per square centimeter and still be able to operate satisfactorily. The collector may be made essentially half as thick and twice as heavily doped as normally and its base is made in two regions which together are essentially four times as thick as the normal power transistor base region. The base region has a heavily doped upper region and a lower region intermediate the upper heavily doped region and the collector. The doping in the intermediate region is as close to intrinsic as possible, in any event less than about 3 x 10 15 impurities per cubic centimeter. The second base region has small width in comparison to the first base region, the ratio of the first to the second being at least about 5 to 1. The base region having the upper heavily doped region and the intermediate or lower low doped region contributes to the higher breakdown voltage which the transistor is able to withstand. The high doping of the collector region essentially lowers that portion of the breakdown voltage achieved by the collector region. Accordingly, it is necessary to transfer certain of this breakdown capability to the base region and this is achieved by using the upper region of heavily doped and an intermediate or lower region of low doping

  4. Performance of conversion efficiency of a crystalline silicon solar cell with base doping density

    Directory of Open Access Journals (Sweden)

    Gokhan Sahin

    Full Text Available In this study, we investigate theoretically the electrical parameters of a crystalline silicon solar cell in steady state. Based on a one-dimensional modeling of the cell, the short circuit current density, the open circuit voltage, the shunt and series resistances and the conversion efficiency are calculated, taking into account the base doping density. Either the I-V characteristic, series resistance, shunt resistance and conversion efficiency are determined and studied versus base doping density. The effects applied of base doping density on these parameters have been studied. The aim of this work is to show how short circuit current density, open circuit voltage and parasitic resistances are related to the base doping density and to exhibit the role played by those parasitic resistances on the conversion efficiency of the crystalline silicon solar. Keywords: Crystalline silicon solar cell, Base doping density, Series resistance, Shunt resistance, Conversion efficiency

  5. Highly luminescent Eu{sup 3+}-doped benzenetricarboxylate based materials

    Energy Technology Data Exchange (ETDEWEB)

    Silva, Ivan G.N. [Departamento de Química Fundamental, Instituto de Química da Universidade de São Paulo, Av. Prof. Lineu Prestes 748, São Paulo 05508-900, SP (Brazil); Mustafa, Danilo, E-mail: dmustafa@iq.usp.br [Departamento de Química Fundamental, Instituto de Química da Universidade de São Paulo, Av. Prof. Lineu Prestes 748, São Paulo 05508-900, SP (Brazil); Andreoli, Bruno [Departamento de Química Fundamental, Instituto de Química da Universidade de São Paulo, Av. Prof. Lineu Prestes 748, São Paulo 05508-900, SP (Brazil); Felinto, Maria C.F.C. [Centro de Química do Meio Ambiente, Instituto de Pesquisas Energéticas e Nucleares, Av. Prof. Lineu Prestes 2242, São Paulo 05508-000, SP (Brazil); Malta, Oscar L. [Departamento de Química Fundamental, Universidade Federal de Pernambuco, Av. Prof. Moraes Rego, 1235, Recife 50670-90, PE (Brazil); Brito, Hermi F., E-mail: hefbrito@iq.usp.br [Departamento de Química Fundamental, Instituto de Química da Universidade de São Paulo, Av. Prof. Lineu Prestes 748, São Paulo 05508-900, SP (Brazil)

    2016-02-15

    [RE(TMA)] anhydrous complexes (RE{sup 3+}: Y, Gd and Lu) present high red emission intensity with a quantum efficiency (~45%) for the [Y(TMA):Eu{sup 3+}] complexes, due to the absence of non-radioactive decay pathways mediated by water molecules. The complexes were prepared in mild conditions. All the compounds are crystalline and thermostable up to 460 °C. Phosphorescence data of the complexes with Y, Gd and Lu show that the T{sub 1} state of the TMA{sup 3−} anion has energy higher than the {sup 5}D{sub 0} emitting level of the Eu{sup 3+} ion, indicating that the ligand can act as an intramolecular energy sensitizer. The photoluminescence properties of the doped materials were studied based on the excitation and emission spectra and luminescence decay curves. The experimental intensity parameters (Ω{sub λ}), lifetimes (τ), radiative (A{sub rad}) and non-radiative (A{sub nrad}) decay rates were determined and discussed. - Highlights: • Highly luminescent Europium doped anhydrous complexes. • Efficient monochromatic red light conversion molecular devices (LCMDs). • High emission quantum efficiencies.

  6. Affinity-based biosensors as promising tools for gene doping detection.

    Science.gov (United States)

    Minunni, Maria; Scarano, Simona; Mascini, Marco

    2008-05-01

    Innovative bioanalytical approaches can be foreseen as interesting means for solving relevant emerging problems in anti-doping control. Sport authorities fear that the newer form of doping, so-called gene doping, based on a misuse of gene therapy, will be undetectable and thus much less preventable. The World Anti-Doping Agency has already asked scientists to assist in finding ways to prevent and detect this newest kind of doping. In this Opinion article we discuss the main aspects of gene doping, from the putative target analytes to suitable sampling strategies. Moreover, we discuss the potential application of affinity sensing in this field, which so far has been successfully applied to a variety of analytical problems, from clinical diagnostics to food and environmental analysis.

  7. Density Functional Investigation of Graphene Doped with Amine-Based Organic Molecules

    Directory of Open Access Journals (Sweden)

    Yeun Hee Hwang

    2015-01-01

    Full Text Available To improve the electronic properties of graphene, many doping techniques have been studied. Herein, we investigate the electronic and molecular structure of doped graphene using density functional theory, and we report the effects of amine-based benzene dopants adsorbed on graphene. Density functional theory (DFT calculations were performed to determine the role of amine-based aromatic compounds in graphene doping. These organic molecules bind to graphene through long-range interactions such as π-π interactions and C-H⋯π hydrogen bonding. We compared the electronic structures of pristine graphene and doped graphene to understand the electronic structure of doped graphene at the molecular level. Also, work functions of doped graphene were obtained from electrostatic potential calculations. A decrease in the work function was observed when the amine-based organic compounds were adsorbed onto graphene. Because these systems are based on physisorption, there was no obvious band structure change at point K at the Fermi level after doping. However, the amine-based organic dopants did change the absolute Fermi energy levels. In this study, we showed that the Fermi levels of the doped graphene were affected by the HOMO energy level of the dopants and by the intermolecular charge transfer between the adsorbed molecules and graphene.

  8. Photothermally Driven Refreshable Microactuators Based on Graphene Oxide Doped Paraffin.

    Science.gov (United States)

    Hou, Sichao; Wang, Miao; Guo, Shouwu; Su, Ming

    2017-08-09

    Actuators based on phase change materials (paraffin) can simultaneously produce large stroke length and large force due to thermal expansion, but the low thermal conductivity of paraffin requires high power input and long actuation time. The graphene oxide (GO) doped paraffin dynamic actuator addresses the key challenges in the design of thermal phase change actuators: Thermal conductivity and light absorbing are increased, and the response time is reduced compared to the standard phase change actuator designed with metal heating resistors. The thermal properties of GO-paraffin composites with varied loading amount are characterized to confirm the optimal loading amount of 1.0%. A multicell phase change actuator was integrated into a digital micromirror controlled optical system. A series of photothermally driven refreshable patterns were generated and confirmed with infrared imaging.

  9. ZnO-based semiconductors studied by Raman spectroscopy. Semimagnetic alloying, doping, and nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Schumm, Marcel

    2009-07-01

    ZnO-based semiconductors were studied by Raman spectroscopy and complementary methods (e.g. XRD, EPS) with focus on semimagnetic alloying with transition metal ions, doping (especially p-type doping with nitrogen as acceptor), and nanostructures (especially wet-chemically synthesized nanoparticles). (orig.)

  10. Preparation of nanometer sized Mn doped Zn based oxides powder for DMS applications

    CSIR Research Space (South Africa)

    Das, J

    2009-01-01

    Full Text Available In order to study the size dependent DMS (Diluted Magnetic Semiconductor) behavior of Mn doped ZnO, the authors have systematically prepared a series of nanosized green powder based on Mn doped ZnO (Zn 1-x Mn x O, where x=0.02 - 0.1) materials using...

  11. Scintillation properties of quantum-dot doped styrene based plastic scintillators

    International Nuclear Information System (INIS)

    Park, J.M.; Kim, H.J.; Hwang, Y.S.; Kim, D.H.; Park, H.W.

    2014-01-01

    We fabricated quantum-dot doped plastic scintillators in order to control the emission wavelength. We studied the characterization of the quantum-dots (CdSe/ZnS) and PPO (2, 5-diphenyloxazole) doped styrene based plastic scintillators. PPO is usually used as a dopant to enhance the scintillation properties of organic scintillators with a maximum emission wavelength of 380 nm. In order to study the scintillation properties of the quantum-dots doped plastic scintillators, the samples were irradiated with X-ray, photon, and 45 MeV proton beams. We observed that only PPO doped plastic scintillators shows a luminescence peak around 380 nm. However, both the quantum-dots and PPO doped plastic scintillators shows luminescence peaks around 380 nm and 520 nm. Addition of quantum-dots had shifted the luminescence spectrum from 380 nm (PPO) toward the region of 520 nm (Quantum-dots). Emissions with wavelength controllable plastic scintillators can be matched to various kinds of photosensors such as photomultiplier tubes, photo-diodes, avalanche photo-diodes, and CCDs, etc. Also quantum-dots doped plastic scintillator, which is irradiated 45 MeV proton beams, shows that the light yield of quantum-dots doped plastic scintillator is increases as quantum-dots doping concentration increases at 520 nm. And also the plastic scintillators were irradiated with Cs-137 γ-ray for measuring fluorescence decay time. -- Highlights: • Quantum-dot doped plastic scintillator is grown by the thermal polymerization method. • Quantum-dot doped plastic scintillators can control the emission wavelength to match with photo-sensor. • Quantum-dots and PPO doped plastic scintillators emitted luminescence peaks around 380 nm and 520 nm. • We observed the energy transfer from PPO to quantum-dot in the quantum-dot doped plastic scintillator

  12. Scintillation properties of quantum-dot doped styrene based plastic scintillators

    Energy Technology Data Exchange (ETDEWEB)

    Park, J.M.; Kim, H.J., E-mail: hongjooknu@gmail.com; Hwang, Y.S.; Kim, D.H.; Park, H.W.

    2014-02-15

    We fabricated quantum-dot doped plastic scintillators in order to control the emission wavelength. We studied the characterization of the quantum-dots (CdSe/ZnS) and PPO (2, 5-diphenyloxazole) doped styrene based plastic scintillators. PPO is usually used as a dopant to enhance the scintillation properties of organic scintillators with a maximum emission wavelength of 380 nm. In order to study the scintillation properties of the quantum-dots doped plastic scintillators, the samples were irradiated with X-ray, photon, and 45 MeV proton beams. We observed that only PPO doped plastic scintillators shows a luminescence peak around 380 nm. However, both the quantum-dots and PPO doped plastic scintillators shows luminescence peaks around 380 nm and 520 nm. Addition of quantum-dots had shifted the luminescence spectrum from 380 nm (PPO) toward the region of 520 nm (Quantum-dots). Emissions with wavelength controllable plastic scintillators can be matched to various kinds of photosensors such as photomultiplier tubes, photo-diodes, avalanche photo-diodes, and CCDs, etc. Also quantum-dots doped plastic scintillator, which is irradiated 45 MeV proton beams, shows that the light yield of quantum-dots doped plastic scintillator is increases as quantum-dots doping concentration increases at 520 nm. And also the plastic scintillators were irradiated with Cs-137 γ-ray for measuring fluorescence decay time. -- Highlights: • Quantum-dot doped plastic scintillator is grown by the thermal polymerization method. • Quantum-dot doped plastic scintillators can control the emission wavelength to match with photo-sensor. • Quantum-dots and PPO doped plastic scintillators emitted luminescence peaks around 380 nm and 520 nm. • We observed the energy transfer from PPO to quantum-dot in the quantum-dot doped plastic scintillator.

  13. Simulation of Heavily Irradiated Silicon Pixel Sensors and Comparison with Test Beam Measurements

    CERN Document Server

    Chiochia, Vincenzo; Bortoletto, Daniela; Cremaldi, Lucien; Cucciarelli, Susanna; Dorokhov, Andrei; Hoermann, Christoph; Kim, Dongwook; Konecki, Marcin; Kotlinski, Danek; Prokofiev, Kirill; Regenfus, Christian; Rohe, Tilman; Sanders, David A.; Son, Seunghee; Speer, Thomas; Chiochia, Vincenzo; Swartz, Morris; Bortoletto, Daniela; Cremaldi, Lucien; Cucciarelli, Susanna; Dorokhov, Andrei; Hoermann, Christoph; Kim, Dongwook; Konecki, Marcin; Kotlinski, Danek; Prokofiev, Kirill; Regenfus, Christian; Rohe, Tilman; Sanders, David A.; Son, Seunghee; Speer, Thomas

    2004-01-01

    Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective doping density is inconsistent with the data. A two-trap double junction model implemented in the ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of charge trapping observed in the data.

  14. Versatile and Tunable Transparent Conducting Electrodes Based on Doped Graphene

    KAUST Repository

    Mansour, Ahmed

    2016-01-01

    Herein, we explore non-covalent doping routes of CVD FLG, such as surface doping, intercalation and combination thereof, through in-depth and systematic characterization of the electrical transport properties and energy levels shifts. The intercalation of FLG with Br2 and FeCl3 is demonstrated, showing the highest improvements of the figure of merit of TCEs of any doping scheme, which results from up to a five-fold increase in conductivity while maintaining the transmittance within 3% of that for the pristine value. Importantly the intercalation yields TCEs that are air-stable, due to encapsulation of the intercalant in the bulk of FLG. Surface doping with novel solution-processed metal-organic molecular species (n- and p-type) is demonstrated with an unprecedented range of work function modulation, resulting from electron transfer and the formation of molecular surface dipoles. However, the conductivity increases compared modestly to intercalation as the electron transfer is limited to the uppermost graphene layers. Finally, a novel and universal multi-modal doping strategy is developed, thanks to the unique platform offered by FLG, where surface and intercalation doping are combined to mutually achieve high conductivity with an extended tunability of the work function. This work presents doped-FLG as a prospective and versatile candidate among emerging TCEs, given the need for efficient and stable doping routes capable of controllably tuning its properties to meet the criteria of a broad range of applications.

  15. Fabrication of Microcapsules for Dye-Doped Polymer-Dispersed Liquid Crystal-Based Smart Windows.

    Science.gov (United States)

    Kim, Mingyun; Park, Kyun Joo; Seok, Seunghwan; Ok, Jong Min; Jung, Hee-Tae; Choe, Jaehoon; Kim, Do Hyun

    2015-08-19

    A dye-doped polymer-dispersed liquid crystal (PDLC) is an attractive material for application in smart windows. Smart windows using a PDLC can be operated simply and have a high contrast ratio compared to those of other devices that employed photochromic or thermochromic material. However, in conventional dye-doped PDLC methods, dye contamination can cause problems and has a limited degree of commercialization of electric smart windows. Here, we report on an approach to resolve dye-related problems by encapsulating the dye in monodispersed capsules. By encapsulation, a fabricated dye-doped PDLC had a contrast ratio of >120 at 600 nm. This fabrication method of encapsulating the dye in a core-shell structured microcapsule in a dye-doped PDLC device provides a practical platform for dye-doped PDLC-based smart windows.

  16. Rectifying Properties of a Nitrogen/Boron-Doped Capped-Carbon-Nanotube-Based Molecular Junction

    International Nuclear Information System (INIS)

    Zhao Peng; Zhang Ying; Wang Pei-Ji; Zhang Zhong; Liu De-Sheng

    2011-01-01

    Based on the non-equilibrium Green's function method and first-principles density functional theory calculations, we investigate the electronic transport properties of a nitrogen/boron-doped capped-single-walled carbon-nanotube-based molecular junction. Obvious rectifying behavior is observed and it is strongly dependent on the doping site. The best rectifying performance can be carried out when the nitrogen/boron atom dopes at a carbon site in the second layer. Moreover, the rectifying performance can be further improved by adjusting the distance between the C 60 nanotube caps. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  17. Thermal diffusion boron doping of single-crystal natural diamond

    Energy Technology Data Exchange (ETDEWEB)

    Seo, Jung-Hun; Mikael, Solomon; Mi, Hongyi; Venkataramanan, Giri; Ma, Zhenqiang, E-mail: mazq@engr.wisc.edu [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Wu, Henry; Morgan, Dane [Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Blanchard, James P. [Department of Nuclear Engineering and Engineering Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Zhou, Weidong [Department of Electrical Engineering, NanoFAB Center, University of Texas at Arlington, Arlington, Texas 76019 (United States); Gong, Shaoqin [Department of Biomedical Engineering and Wisconsin Institute for Discovery, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

    2016-05-28

    With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

  18. Thermal diffusion boron doping of single-crystal natural diamond

    International Nuclear Information System (INIS)

    Seo, Jung-Hun; Mikael, Solomon; Mi, Hongyi; Venkataramanan, Giri; Ma, Zhenqiang; Wu, Henry; Morgan, Dane; Blanchard, James P.; Zhou, Weidong; Gong, Shaoqin

    2016-01-01

    With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

  19. Versatile and Tunable Transparent Conducting Electrodes Based on Doped Graphene

    KAUST Repository

    Mansour, Ahmed E.

    2016-11-25

    The continued growth of the optoelectronics industry and the emergence of wearable and flexible electronics will continue to place an ever increasing pressure on replacing ITO, the most widely used transparent conducting electrode (TCE). Among the various candidates, graphene shows the highest optical transmittance in addition to promising electrical transport properties. The currently available large-scale synthesis routes of graphene result in polycrystalline samples rife with grain boundaries and other defects which limit its transport properties. Chemical doping of graphene is a viable route towards increasing its conductivity and tuning its work function. However, dopants are typically present at the surface of the graphene sheet, making them highly susceptible to degradation in environmental conditions. Few-layers graphene (FLG) is a more resilient form of graphene exhibiting higher conductivity and performance stability under stretching and bending as contrasted to single-layer graphene. In addition FLG presents the advantage of being amenable bulk doping by intercalation. Herein, we explore non-covalent doping routes of CVD FLG, such as surface doping, intercalation and combination thereof, through in-depth and systematic characterization of the electrical transport properties and energy levels shifts. The intercalation of FLG with Br2 and FeCl3 is demonstrated, showing the highest improvements of the figure of merit of TCEs of any doping scheme, which results from up to a five-fold increase in conductivity while maintaining the transmittance within 3% of that for the pristine value. Importantly the intercalation yields TCEs that are air-stable, due to encapsulation of the intercalant in the bulk of FLG. Surface doping with novel solution-processed metal-organic molecular species (n- and p-type) is demonstrated with an unprecedented range of work function modulation, resulting from electron transfer and the formation of molecular surface dipoles. However

  20. Tuning electronic properties of In2O3 nanowires by doping control

    International Nuclear Information System (INIS)

    Lei, B.; Li, C.; Zhang, D.; Tang, D.; Zhou, C.

    2004-01-01

    We present two effective routes to tune the electronic properties of single-crystalline In 2 O 3 nanowires by controlling the doping. The first method involves using different O 2 concentrations during the synthesis. Lightly (heavily) doped nanowires were produced by using high (low) O 2 concentrations, respectively, as revealed by the conductances and threshold voltages of nanowire-based field-effect transistors. Our second method exploits post-synthesis baking, as baking heavily doped nanowires in ambient air led to suppressed conduction and a positive shift of the threshold voltage, whereas baking lightly doped nanowires in vacuum displayed the opposite behavior. Our approaches offer viable ways to tune the electronic properties of many nonstoichiometric metal oxide systems such as In 2 O 3 , SnO 2 , and ZnO nanowires for various applications

  1. Further considerations for damping in heavily insulated pipe systems

    International Nuclear Information System (INIS)

    Anderson, M.J.; Lindquist, M.R.; Severud, L.K.

    1985-01-01

    Over the past several years a body of test data has been accumulated which demonstrates that damping in small diameter heavily insulated pipe systems is much larger than presently recommended by Regulatory Guide 1.61. This data is generally based on pipe systems using a stand-off insulation design with a heater annulus. Additional tests have how been completed on similar pipe systems using a strap-on insulation design without the heater annulus. Results indicate some reduction in damping over the stand-off designs. Test data has also been obtained on a larger sixteen-inch diameter heavily insulated pipe system. Results of these two additional test series are presented. Revised damping values for seismic design of heavily insulated pipe systems are then recommended

  2. Further considerations for damping in heavily insulated pipe systems

    International Nuclear Information System (INIS)

    Anderson, M.J.; Lindquist, M.R.; Severud, L.K.

    1985-01-01

    Over the past several years a body of test data has been accumulated which demonstrates that damping in small diameter heavily insulated pipe systems is much larger than presently recommended by Regulatory Code 1.61. This data is generally based on pipe systems using a stand-off insulation design with a heater annulus. Additional tests have now been completed on similar pipe systems using a strap-on insulation design without the heater annulus. Results indicate some reduction in damping over the stand-off designs. Test data has also been obtained on a larger sixteen-inch diameter heavily insulated pipe system. Results of these two additional test series are presented. Revised damping values for seismic design for heavily insulated pipe systems are then recommended

  3. The electrical properties of a strongly disordered system based on lightly doped germanium compensated by disordered regions

    International Nuclear Information System (INIS)

    Evseev, V.A.; Konopleva, R.F.; Yuferev, A.A.

    1976-01-01

    A study was made of lightly doped (Nsub(Sb) approximately 10 15 cm -3 ) n-Ge, heavily compensated (K = Nsub(A)/N sub(D) approximately 1) by fast neutrons from a reactor. Irradiation is shown to produce, near n-p conversion (annealing has the same effect near p-n conversion), a random relief of electrostatic potential which is caused by the overlap of the space-charge regions surrounding disordered regions (DR). the random potential field results in a spatial 'bending' of the whole band spectrum of germanium, similar to the way it is observed in amorphous semiconductors because of their disorder. Experiments show the conduction in the DR overlap region to be of an activated nature, associated with the ejection of carriers to the corresponding 'percolation' levels. The activation energy of such conduction varies with the degree of compensation. The shift of the Fermi level depends on the degree of compensation here in a much more sensitive way than in the case of compensation by chemical impurities. The properties of Ge obtained by DR overlap and by compensation with chemical impurities are compared. A superlinear I-V characteristic producing the switching effect is observed in strong electric fields (E approximately 10 3 V cm -1 ). A suggestion is made that a study of disordered systems, based on lightly doped germanium which is compensated with DRs produced by high-energy particles, should both help to obtain new information on the parameters of the DRs proper and help to simulate the properties of the amorphous semiconductors. (author)

  4. Tunneling Negative Magnetoresistance via δ Doping in a Graphene-Based Magnetic Tunnel Junction

    International Nuclear Information System (INIS)

    Yuan Jian-Hui; Chen Ni; Mo Hua; Zhang Yan; Zhang Zhi-Hai

    2016-01-01

    We investigate the tunneling magnetoresistance via δ doping in a graphene-based magnetic tunnel junction in detail. It is found that the transmission probability and the conductance oscillates with the position and the aptitude of the δ doping. Also, both the transmission probability and the conductance at the parallel configuration are suppressed by the magnetic field more obviously than that at the antiparallel configuration, which implies a large negative magnetoresistance for this device. The results show that the negative magnetoresistance of over 300% at B = 1.0 T is observed by choosing suitable doped parameters, and the temperature plays an important role in the magnetoresistance. Thus it is possible to open a way to effectively manipulate the magnetoresistance devices, and to make a type of magnetoresistance device by controlling the structural parameter of the δ doping. (paper)

  5. Synthesis and photocatalytic activity of graphene based doped TiO2 nanocomposites

    International Nuclear Information System (INIS)

    Gu, Yongji; Xing, Mingyang; Zhang, Jinlong

    2014-01-01

    Graphical abstract: - Highlights: • Graphene based doped TiO 2 nanocomposites were prepared. • The intimate contact between doped TiO 2 and graphene is achieved simultaneously. • These nanocomposites showed higher photocatalytic activity than TiO 2 and doped TiO 2 . • Photocatalytic mechanism was explained thoroughly. - Abstract: The nanocomposites of reduced graphene oxide based nitrogen doped TiO 2 (N–TiO 2 –RGO) and reduced graphene oxide based nitrogen and vanadium co-doped TiO 2 (N, V–TiO 2 –RGO) were prepared via a facile hydrothermal reaction of graphene oxide and TiO 2 in a water solvent. In this hydrothermal treatment, the reduction of graphene oxide and the intimate contact between nitrogen doped TiO 2 (N–TiO 2 ) or nitrogen and vanadium co-doped TiO 2 (N,V–TiO 2 ) and the RGO sheet is achieved simultaneously. Both N–TiO 2 –RGO and N,V–TiO 2 –RGO nanocomposites exhibit much higher visible light photocatalytic activity than N–TiO 2 and N,V–TiO 2 , and the order of visible light photocatalytic activity is N,V–TiO 2 –RGO > N–TiO 2 –RGO > N,V–TiO 2 > N–TiO 2 > TiO 2 . According to the characterization, the enhanced photocatalytic activity of the nanocomposites is attributed to reasons, such as enhancement of adsorption of pollutants, light absorption intensity, minimizing the recombination of photoinduced electrons and holes and more excited states of these nanocomposites under visible light irradiation. Overall, this work provides a more marked contrast of graphene based semiconductor nanocomposites and a more comprehensive explanation of the mechanism

  6. Temperature and Pressure Sensors Based on Spin-Allowed Broadband Luminescence of Doped Orthorhombic Perovskite Structures

    Science.gov (United States)

    Eldridge, Jeffrey I. (Inventor); Chambers, Matthew D. (Inventor)

    2014-01-01

    Systems and methods that are capable of measuring pressure or temperature based on luminescence are discussed herein. These systems and methods are based on spin-allowed broadband luminescence of sensors with orthorhombic perovskite structures of rare earth aluminates doped with chromium or similar transition metals, such as chromium-doped gadolinium aluminate. Luminescence from these sensors can be measured to determine at least one of temperature or pressure, based on either the intense luminescence of these sensors, even at high temperatures, or low temperature techniques discussed herein.

  7. Experimental results on performance improvement of doped carbon-base materials

    International Nuclear Information System (INIS)

    Xu Zengyu

    2002-01-01

    Carbon-base materials is one of candidate plasma facing materials and have been widely used in current tokamak facilities in the world. But some defect properties are presented on high yield of chemical sputtering , high yield of radiation enhancement sublimate (RES), cracking after heat flux and so on. It can be improved by doped some little other elements into the carbon-base materials, such as boron, silicon, titanium and so on. Experimental results indicate that it is feasible and successful to improve thermo-physics and chemical properties of carbon-base materials by multi-element doped. Doped 12 % silicon can strained RES and chemical sputtering yield do not changed. It is the same level of chemical sputtering yield for B 4 C from 3 % to 10 % , but their resistance thermal shock properties ability increases with B 4 C increases

  8. Illegal performance enhancing drugs and doping in sport: a picture-based brief implicit association test for measuring athletes’ attitudes

    Science.gov (United States)

    2014-01-01

    Background Doping attitude is a key variable in predicting athletes’ intention to use forbidden performance enhancing drugs. Indirect reaction-time based attitude tests, such as the implicit association test, conceal the ultimate goal of measurement from the participant better than questionnaires. Indirect tests are especially useful when socially sensitive constructs such as attitudes towards doping need to be described. The present study serves the development and validation of a novel picture-based brief implicit association test (BIAT) for testing athletes’ attitudes towards doping in sport. It shall provide the basis for a transnationally compatible research instrument able to harmonize anti-doping research efforts. Method Following a known-group differences validation strategy, the doping attitudes of 43 athletes from bodybuilding (representative for a highly doping prone sport) and handball (as a contrast group) were compared using the picture-based doping-BIAT. The Performance Enhancement Attitude Scale (PEAS) was employed as a corresponding direct measure in order to additionally validate the results. Results As expected, in the group of bodybuilders, indirectly measured doping attitudes as tested with the picture-based doping-BIAT were significantly less negative (η2 = .11). The doping-BIAT and PEAS scores correlated significantly at r = .50 for bodybuilders, and not significantly at r = .36 for handball players. There was a low error rate (7%) and a satisfactory internal consistency (r tt  = .66) for the picture-based doping-BIAT. Conclusions The picture-based doping-BIAT constitutes a psychometrically tested method, ready to be adopted by the international research community. The test can be administered via the internet. All test material is available “open source”. The test might be implemented, for example, as a new effect-measure in the evaluation of prevention programs. PMID:24479865

  9. Illegal performance enhancing drugs and doping in sport: a picture-based brief implicit association test for measuring athletes' attitudes.

    Science.gov (United States)

    Brand, Ralf; Heck, Philipp; Ziegler, Matthias

    2014-01-30

    Doping attitude is a key variable in predicting athletes' intention to use forbidden performance enhancing drugs. Indirect reaction-time based attitude tests, such as the implicit association test, conceal the ultimate goal of measurement from the participant better than questionnaires. Indirect tests are especially useful when socially sensitive constructs such as attitudes towards doping need to be described. The present study serves the development and validation of a novel picture-based brief implicit association test (BIAT) for testing athletes' attitudes towards doping in sport. It shall provide the basis for a transnationally compatible research instrument able to harmonize anti-doping research efforts. Following a known-group differences validation strategy, the doping attitudes of 43 athletes from bodybuilding (representative for a highly doping prone sport) and handball (as a contrast group) were compared using the picture-based doping-BIAT. The Performance Enhancement Attitude Scale (PEAS) was employed as a corresponding direct measure in order to additionally validate the results. As expected, in the group of bodybuilders, indirectly measured doping attitudes as tested with the picture-based doping-BIAT were significantly less negative (η2 = .11). The doping-BIAT and PEAS scores correlated significantly at r = .50 for bodybuilders, and not significantly at r = .36 for handball players. There was a low error rate (7%) and a satisfactory internal consistency (rtt = .66) for the picture-based doping-BIAT. The picture-based doping-BIAT constitutes a psychometrically tested method, ready to be adopted by the international research community. The test can be administered via the internet. All test material is available "open source". The test might be implemented, for example, as a new effect-measure in the evaluation of prevention programs.

  10. Pr3 + -doped GeSx-based glasses for fiber amplifiers at 1.3 µm

    Science.gov (United States)

    Simons, D. R.; Faber, A. J.; de Waal, H.

    1995-03-01

    The photoluminescence properties of Pr3+ -doped GeS x -based glasses are studied and compared with those of other sulfide and fluoride glasses. The possibility of highly pump-power-efficient fiber amplifiers based on these GeSx-containing glasses in the telecommunications window at 1.3 mu m is discussed.

  11. Pr3+-doped GeSx-based glasses for fiber amplifiers at 1.3 mm

    NARCIS (Netherlands)

    Simons, D.R.; Faber, A.J.; Waal, de H.

    1995-01-01

    The luminescence of Pr3+-doped GeSx-based glasses were studied and compared with those of other sulfide and fluoride glasses. The possibility of highly pump-power-efficient fiber amplifiers based on these GeSx-contg. glasses in the telecommunications window at 1.3 mm is discussed. [on SciFinder (R)

  12. Observation of an electron band above the Fermi level in FeTe0.55Se0.45 from in-situ surface doping

    International Nuclear Information System (INIS)

    Zhang, P.; Ma, J.; Qian, T.; Richard, P.; Ding, H.; Xu, N.; Xu, Y.-M.; Fedorov, A. V.; Denlinger, J. D.; Gu, G. D.

    2014-01-01

    We used in-situ potassium (K) evaporation to dope the surface of the iron-based superconductor FeTe 0.55 Se 0.45 . The systematic study of the bands near the Fermi level confirms that electrons are doped into the system, allowing us to tune the Fermi level of this material and to access otherwise unoccupied electronic states. In particular, we observe an electron band located above the Fermi level before doping that shares similarities with a small three-dimensional pocket observed in the cousin, heavily electron-doped KFe 2−x Se 2 compound.

  13. Performance of a carbon monoxide sensor based on zirconia-doped ceria

    Directory of Open Access Journals (Sweden)

    Noriya Izu

    2016-06-01

    Full Text Available Resistive-type carbon monoxide sensors were fabricated using zirconia-doped ceria, and their sensing properties were evaluated and compared with equivalent devices based on non-doped ceria. The response of both sensor types was found to increase with decreasing temperature, while the response at 450 °C of a sensor fired at 950 °C was greater than that of a sensor fired at 1100 °C. When fired at 950 °C, however, the response at 450 °C of a sensor created using zirconia-doped ceria was slightly less than that of a sensor constructed from non-doped ceria. Multivariate analysis confirmed that the response of both sensor types is proportional to the resistance raised to the power of about 0.5, and inversely proportional to the particle size raised to a power of about 0.8. The sensor response time can be considered almost the same regardless of whether zirconia doping is used or not.

  14. PCR-based detection of gene transfer vectors: application to gene doping surveillance.

    Science.gov (United States)

    Perez, Irene C; Le Guiner, Caroline; Ni, Weiyi; Lyles, Jennifer; Moullier, Philippe; Snyder, Richard O

    2013-12-01

    Athletes who illicitly use drugs to enhance their athletic performance are at risk of being banned from sports competitions. Consequently, some athletes may seek new doping methods that they expect to be capable of circumventing detection. With advances in gene transfer vector design and therapeutic gene transfer, and demonstrations of safety and therapeutic benefit in humans, there is an increased probability of the pursuit of gene doping by athletes. In anticipation of the potential for gene doping, assays have been established to directly detect complementary DNA of genes that are top candidates for use in doping, as well as vector control elements. The development of molecular assays that are capable of exposing gene doping in sports can serve as a deterrent and may also identify athletes who have illicitly used gene transfer for performance enhancement. PCR-based methods to detect foreign DNA with high reliability, sensitivity, and specificity include TaqMan real-time PCR, nested PCR, and internal threshold control PCR.

  15. Effects of Mg doping in the quantum barriers on the efficiency droop of GaN based light emitting diodes

    International Nuclear Information System (INIS)

    Liu Yang; Yang Yongchun

    2016-01-01

    The effects of Mg doping in the quantum barriers (QBs) on the efficiency droop of GaN based light emitting diodes (LEDs) were investigated through a duel wavelength method. Barrier Mg doping would lead to the enhanced hole transportation and reduced polarization field in the quantum wells (QWs), both may reduce the efficiency droop. However, heavy Mg doping in the QBs would strongly deteriorate the crystal quality of the QWs grown after the doped QB. When increasing the injection current, the carriers would escape from the QWs between n-GaN and the doped QB and recombine non-radiatively in the QWs grown after the doped QB, leading to a serious efficiency droop. (paper)

  16. Theory of photoresistors on the base of trapezoidal δ-doped superlattices

    International Nuclear Information System (INIS)

    Osipov, V.V.; Selyakov, A.Yu.; Foygel, M.

    1999-01-01

    A theory of far infrared photoresistors that is based on trapezoidal δ-doped superlattices (TSL) has been developed. It is shown that photoconductivity of TSL in monopolar despite the interband absorption and generation of electron - hole pairs. In this way, photoelectric gain and responsivity of TSL photoresistor can reach gigantic values. It is established that tunneling-radiative lifetime of electron-hole pairs determines the kinetics of photoconductivity decay. It is shown that a surprising effect takes place: voltage responsivity does not depend virtually on lifetime of nonequilibrium carriers and on the doping level of TSL photoresistor and can reach gigantic values [ru

  17. Modeling of Mid-IR Amplifier Based on an Erbium-Doped Chalcogenide Microsphere

    Directory of Open Access Journals (Sweden)

    P. Bia

    2012-01-01

    Full Text Available An optical amplifier based on a tapered fiber and an Er3+-doped chalcogenide microsphere is designed and optimized. A dedicated 3D numerical model, which exploits the coupled mode theory and the rate equations, is used. The main transitions among the erbium energy levels, the amplified spontaneous emission, and the most important secondary transitions pertaining to the ion-ion interactions have been considered. Both the pump and signal beams are efficiently injected and obtained by a suitable design of the taper angle and the fiber-microsphere gap. Moreover, a good overlapping between the optical signals and the rare-earth-doped region is also obtained. In order to evaluate the amplifier performance in reduced computational time, the doped area is partitioned in sectors. The obtained simulation results highlight that a high-efficiency midinfrared amplification can be obtained by using a quite small microsphere.

  18. Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation

    Science.gov (United States)

    Duffy, Ray; Ricchio, Alessio; Murphy, Ruaidhrí; Maxwell, Graeme; Murphy, Richard; Piaszenski, Guido; Petkov, Nikolay; Hydes, Alan; O'Connell, Dan; Lyons, Colin; Kennedy, Noel; Sheehan, Brendan; Schmidt, Michael; Crupi, Felice; Holmes, Justin D.; Hurley, Paul K.; Connolly, James; Hatem, Chris; Long, Brenda

    2018-03-01

    The advent of high surface-to-volume ratio devices has necessitated a revised approach to parameter extraction and process evaluation in field-effect transistor technologies. In this work, active doping concentrations are extracted from the electrical analysis of Si nanowire devices with high surface-to-volume ratios. Nanowire resistance and Si resistivity are extracted, by first extracting and subtracting out the contact resistance. Resistivity (ρ) is selected as the benchmark parameter to compare different doping processes with each other. The impacts of nanowire diameter scaling to 10 nm and of nanowire spacing scaling to resistivity and higher dopant activation, with dependencies on the nanowire width greater than on nanowire spacing. Limitations in ADP P monolayer doping with a SiO2 cap are due to the difficulties in dopant incorporation, as it is based on in-diffusion, and P atoms must overcome a potential barrier on the Si surface.

  19. A stabilized optical frequency comb based on an Er-doped fiber femtosecond laser

    Science.gov (United States)

    Xia, Chuanqing; Wu, Tengfei; Zhao, Chunbo; Xing, Shuai

    2018-03-01

    An optical frequency comb based on a 250 MHz home-made Er-doped fiber femtosecond laser is presented in this paper. The Er-doped fiber laser has a ring cavity and operates mode-locked in femtosecond regime with the technique of nonlinear polarization rotation. The pulse duration is 118 fs and the spectral width is 30 nm. A part of the femtosecond laser is amplified in Er-doped fiber amplifier before propagating through a piece of highly nonlinear fiber for expanding the spectrum. The carrier-envelope offset frequency of the comb which has a signal-to-noise ratio more than 35 dB is extracted by means of f-2f beating. It demonstrates that both carrier-envelope offset frequency and repetition frequency keep phase locked to a Rubidium atomic clock simultaneously for 2 hours. The frequency stabilized fiber combs will be increasingly applied in optical metrology, attosecond pulse generation, and absolute distance measurement.

  20. Molecular modeling of protonic acid doping of emeraldine base polyaniline for chemical sensors

    NARCIS (Netherlands)

    Chen, X.; Yuan, C.A.; Wong, C.K.Y.; Ye, H.; Leung, S.Y.Y.; Zhang, G.

    2012-01-01

    We proposed a molecular modeling methodology to study the protonic acid doping of emeraldine base polyaniline which can used in gas detection. The commercial forcefield COMPASS was used for the polymer and protonic acid molecules. The molecular model, which is capable of representing the polyaniline

  1. Molecular modeling of the conductivity changes of the emeraldine base polyaniline due to protonic acid doping

    NARCIS (Netherlands)

    Chen, X.; Yuan, C.A.; Wong, C.K.Y.; Zhang, G.

    2012-01-01

    We propose a molecular modeling strategy, which is capable of predicting the conductivity change of emeraldine base polyaniline polymer due to different degree of protonic acid doping. The method is comprised of two key steps: (1) generating the amorphous unit cells with given number of polymer

  2. Highly sensitive miniature fluidic flowmeter based on an FBG heated by Co2+-doped fiber

    NARCIS (Netherlands)

    Liu, Z.; Htein, L.; Cheng, L.K.; Martina, Q.; Jansen, R.; Tam, H.Y.

    2017-01-01

    In this paper, we present a miniature fluidic flow sensor based on a short fiber Bragg grating inscribed in a single mode fiber and heated by Co2+-doped multimode fibers. The proposed flow sensor was employed to measure the flow rates of oil and water, showing good sensitivity of 0.339 nm/(m/s) and

  3. Bragg-grating-based rare-earth-ion-doped channel waveguide lasers and their applications

    NARCIS (Netherlands)

    Bernhardi, Edward

    2012-01-01

    The research presented in this thesis concerns the investigation and development of Bragggrating-based integrated cavities for the rare-earth-ion-doped Al2O3 (aluminium oxide) waveguide platform, both from a theoretical and an experimental point of view, with the primary purpose of realizing

  4. Large capacitance enhancement induced by metal-doping in graphene-based supercapacitors: a first-principles-based assessment.

    Science.gov (United States)

    Paek, Eunsu; Pak, Alexander J; Hwang, Gyeong S

    2014-08-13

    Chemically doped graphene-based materials have recently been explored as a means to improve the performance of supercapacitors. In this work, we investigate the effects of 3d transition metals bound to vacancy sites in graphene with [BMIM][PF6] ionic liquid on the interfacial capacitance; these results are compared to the pristine graphene case with particular attention to the relative contributions of the quantum and electric double layer capacitances. Our study highlights that the presence of metal-vacancy complexes significantly increases the availability of electronic states near the charge neutrality point, thereby enhancing the quantum capacitance drastically. In addition, the use of metal-doped graphene electrodes is found to only marginally influence the microstructure and capacitance of the electric double layer. Our findings indicate that metal-doping of graphene-like electrodes can be a promising route toward increasing the interfacial capacitance of electrochemical double layer capacitors, primarily by enhancing the quantum capacitance.

  5. Improve photovoltaic performance of titanium dioxide nanorods based dye-sensitized solar cells by Ca-doping

    International Nuclear Information System (INIS)

    Li, Weixin; Yang, Junyou; Zhang, Jiaqi; Gao, Sheng; Luo, Yubo; Liu, Ming

    2014-01-01

    Highlights: • TiO 2 nanorods doped with Ca ions were synthesized by one-step hydrothermal method. • The flat band edge of rutile TiO 2 shifted positively via Ca-doping. • The photoelectric conversion efficiency of dye-sensitized solar cells (DSSCs) based on TiO 2 electrode was much enhanced by Ca-doping. • A relatively high open circuit voltage was obtained by adopting Ca-doped TiO 2 nanorods electrode. - Abstract: Ca-doped TiO 2 nanorod arrays were prepared via the one-step hydrothermal method successfully, and the effect of Ca ions content on the photovoltaic conversion efficiency of dye-sensitized solar cells has been fully discussed in the paper. Although no obvious change on the microstructure and morphology was observed by field emission scanning electron microscope and transmission electron microscope for the Ca-doped samples, the results of X-ray diffraction and X-ray photoelectron spectroscopy confirmed that Ti 4+ was substituted with Ca 2+ successfully. UV–vis spectroscopy results revealed that the flat band edge shifted positively by Ca ions doping. The photovoltaic conversion efficiency of the dye-sensitized solar cells based on the 2 mol% Ca-doped TiO 2 electrode was 43% higher than that of the undoped one due to the less recombination possibility

  6. Electrochemical Biosensor Based on Boron-Doped Diamond Electrodes with Modified Surfaces

    OpenAIRE

    Yu, Yuan; Zhou, Yanli; Wu, Liangzhuan; Zhi, Jinfang

    2012-01-01

    Boron-doped diamond (BDD) thin films, as one kind of electrode materials, are superior to conventional carbon-based materials including carbon paste, porous carbon, glassy carbon (GC), carbon nanotubes in terms of high stability, wide potential window, low background current, and good biocompatibility. Electrochemical biosensor based on BDD electrodes have attracted extensive interests due to the superior properties of BDD electrodes and the merits of biosensors, such as specificity, sensitiv...

  7. Si-doping bone composite based on protein template-mediated assembly for enhancing bone regeneration

    Science.gov (United States)

    Yang, Qin; Du, Yingying; Wang, Yifan; Wang, Zhiying; Ma, Jun; Wang, Jianglin; Zhang, Shengmin

    2017-06-01

    Bio-inspired hybrid materials that contain organic and inorganic networks interpenetration at the molecular level have been a particular focus of interest on designing novel nanoscale composites. Here we firstly synthesized a series of hybrid bone composites, silicon-hydroxyapatites/silk fibroin/collagen, based on a specific molecular assembled strategy. Results of material characterization confirmed that silicate had been successfully doped into nano-hydroxyapatite lattice. In vitro evaluation at the cellular level clearly showed that these Si-doped composites were capable of promoting the adhesion and proliferation of rat mesenchymal stem cells (rMSCs), extremely enhancing osteoblastic differentiation of rMSCs compared with silicon-free composite. More interestingly, we found there was a critical point of silicon content in the composition on regulating multiple cell behaviors. In vivo animal evaluation further demonstrated that Si-doped composites enabled to significantly improve the repair of cranial bone defect. Consequently, our current work not only suggests fabricating a potential bone repair materials by integrating element-doping and molecular assembled strategy in one system, but also paves a new way for constructing multi-functional composite materials in the future.

  8. Si-doping bone composite based on protein template-mediated assembly for enhancing bone regeneration

    Institute of Scientific and Technical Information of China (English)

    Qin YANG; Yingying DU; Yifan WANG; Zhiying WANG; Jun MA; Jianglin WANG; Shengmin ZHANG

    2017-01-01

    Bio-inspired hybrid materials that contain organic and inorganic networks interpenetration at the molecular level have been a particular focus of interest on designing novel nanoscale composites.Here we firstly synthesized a series of hybrid bone composites,silicon-hydroxyapatites/silk fibroin/collagen,based on a specific molecular assembled strategy.Results of material characterization confirmed that silicate had been successfully doped into nano-hydroxyapatite lattice.In vitro evaluation at the cellular level clearly showed that these Si-doped composites were capable of promoting the adhesion and proliferation of rat mesenchymal stem cells (rMSCs),extremely enhancing osteoblastic differentiation of rMSCs compared with silicon-free composite.More interestingly,we found there was a critical point of silicon content in the composition on regulating multiple cell behaviors.In vivo animal evaluation further demonstrated that Si-doped composites enabled to significantly improve the repair of cranial bone defect.Consequently,our current work not only suggests fabricating a potential bone repair materials by integrating element-doping and molecular assembled strategy in one system,but also paves a new way for constructing multi-functional composite materials in the future.

  9. Controlled electrochemical doping of graphene-based 3D nanoarchitecture electrodes for supercapacitors and capacitive deionisation.

    Science.gov (United States)

    Abdelkader, A M; Fray, D J

    2017-10-05

    Chemically-doped graphenes are promising electrode materials for energy storage and electrosorption applications. Here, an affordable electrochemical green process is introduced to dope graphene with nitrogen. The process is based on reversing the polarity of two identical graphene oxide (GO) electrodes in molten KCl-LiCl-Li 3 N. During the cathodic step, the oxygen functional groups on the GO surface are removed through direct electro-deoxidation reactions or a reaction with the deposited lithium. In the anodic step, nitrogen is adsorbed onto the surface of graphene and subsequently reacts to form nitrogen-doped graphene. The doping process is controllable, and graphene with up to 7.4 at% nitrogen can be produced. The electrochemically treated electrodes show a specific capacitance of 320 F g -1 in an aqueous KOH electrolyte and maintain 96% of this value after 10 000 cycles. The electrodes also display excellent electrosorption performance in capacitive deionisation devices with the salt removal efficiency reaching up to 18.6 mg g -1 .

  10. Electrochemical bisphenol A sensor based on N-doped graphene sheets

    International Nuclear Information System (INIS)

    Fan Haixia; Li Yan; Wu Dan; Ma Hongmin; Mao Kexia; Fan Dawei; Du Bin; Li He; Wei Qin

    2012-01-01

    Highlights: ► N-doped graphene sheets have catalytic activity towards the BPA oxidation. ► The biosensor based on N-doped graphene sheets and chitosan. ► This method was proposed for determination of BPA utilizing N-doped graphene sheets. - Abstract: Bisphenol A (BPA), which could disrupt endocrine system and cause cancer, has been considered as an endocrine disruptor. Therefore, it is very important and necessary to develop a sensitive and selective method for detection of BPA. Herein, nitrogen-doped graphene sheets (N-GS) and chitosan (CS) were used to prepare electrochemical BPA sensor. Compared with graphene, N-GS has favorable electron transfer ability and electrocatalytic property, which could enhance the response signal towards BPA. CS also exhibits excellent film forming ability and improves the electrochemical behavior of N-GS modified electrode. The sensor exhibits a sensitive response to BPA in the range of 1.0 × 10 −8 –1.3 × 10 −6 mol L −1 with a low detection limit of 5.0 × 10 −9 mol L −1 under the optimal conditions. Finally, this proposed sensor was successfully employed to determine BPA in water samples with satisfactory results.

  11. Density functional theory based study of chlorine doped WS2-metal interface

    International Nuclear Information System (INIS)

    Chanana, Anuja; Mahapatra, Santanu

    2016-01-01

    Investigation of a transition metal dichalcogenide (TMD)-metal interface is essential for the effective functioning of monolayer TMD based field effect transistors. In this work, we employ the Density Functional Theory calculations to analyze the modulation of the electronic structure of monolayer WS 2 with chlorine doping and the relative changes in the contact properties when interfaced with gold and palladium. We initially examine the atomic and electronic structures of pure and doped monolayer WS 2 supercell and explore the formation of midgap states with band splitting near the conduction band edge. Further, we analyze the contact nature of the pure supercell with Au and Pd. We find that while Au is physiosorbed and forms n-type contact, Pd is chemisorped and forms p-type contact with a higher valence electron density. Next, we study the interface formed between the Cl-doped supercell and metals and observe a reduction in the Schottky barrier height (SBH) in comparison to the pure supercell. This reduction found is higher for Pd in comparison to Au, which is further validated by examining the charge transfer occurring at the interface. Our study confirms that Cl doping is an efficient mechanism to reduce the n-SBH for both Au and Pd, which form different types of contact with WS 2 .

  12. Density functional theory based study of chlorine doped WS{sub 2}-metal interface

    Energy Technology Data Exchange (ETDEWEB)

    Chanana, Anuja; Mahapatra, Santanu, E-mail: santanu@dese.iisc.ernet.in [NanoScale Device Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science, Bengaluru, Karnataka 560012 (India)

    2016-03-07

    Investigation of a transition metal dichalcogenide (TMD)-metal interface is essential for the effective functioning of monolayer TMD based field effect transistors. In this work, we employ the Density Functional Theory calculations to analyze the modulation of the electronic structure of monolayer WS{sub 2} with chlorine doping and the relative changes in the contact properties when interfaced with gold and palladium. We initially examine the atomic and electronic structures of pure and doped monolayer WS{sub 2} supercell and explore the formation of midgap states with band splitting near the conduction band edge. Further, we analyze the contact nature of the pure supercell with Au and Pd. We find that while Au is physiosorbed and forms n-type contact, Pd is chemisorped and forms p-type contact with a higher valence electron density. Next, we study the interface formed between the Cl-doped supercell and metals and observe a reduction in the Schottky barrier height (SBH) in comparison to the pure supercell. This reduction found is higher for Pd in comparison to Au, which is further validated by examining the charge transfer occurring at the interface. Our study confirms that Cl doping is an efficient mechanism to reduce the n-SBH for both Au and Pd, which form different types of contact with WS{sub 2}.

  13. Strained superlattices and magnetic tunnel junctions based on doped manganites

    International Nuclear Information System (INIS)

    Yafeng Lu

    2001-01-01

    In the first part of this work the effect of biaxial strain on the structure and transport properties of doped manganites has been studied to explore the relevance of Jahn-Teller electron-lattice interaction for the CMR phenomenon in these materials. A series of high quality, coherently strained La 2/3 (Ca or Ba) 1/3 MnO 3 /SrTiO 3 superlattices with different modulation periods have been fabricated on (001) SrTiO 3 and NdGaO 3 substrates by laser molecular beam epitaxy. A detailed structural characterization was performed by high-angle X-ray diffraction (HAXRD) and low-angle X-ray reflectivity (LAXRR). The fabricated superlattices are very flat, show excellent structural coherence and very small mosaic spread (0.2 ∝0.03 ). The in-plane coherency strain could be varied by changing the thickness ratio of the constituent layers allowing for a systematic variation of the resulting lattice distortion of La 2/3 (Ca or Ba) 1/3 MnO 3 . By the in-plane coherency strain the out-of-plane lattice constant could be continuously adjusted by varying the relative thickness of the SrTiO 3 and La 2/3 (Ca or Ba) 1/3 MnO 3 layers: the c-axis lattice constant of La 2/3 Ba 1/3 MnO 3 was found to vary from 3.910 A to 3.975 A due to a compressive in-plane strain, whereas the c-axis constant of La 2/3 Ca 1/3 MnO 3 was found to change from 3.87 A to 3.79A due to tensile in-plane strain. The strain results in a biaxial distortion ε bi of La 2/3 (Ca or Ba) 1/3 MnO 3 that strongly affects the electrical transport properties and the magnetoresistance. Our measurements show that there is a clear correlation between ε bi and the temperature T p corresponding to the maximum in the resistivity versus temperature curves as well as the measured magnetoresistance in the two systems. In the second part of this work we have investigated the spin-dependent tunneling in trilayer structures of La 2/3 Ba 1/3 MnO 3 /SrTiO 3 /La 2/3 Ba 1/3 MnO 3 . (orig.)

  14. STRUCTURAL CHARACTERISTICS & DIELECTRIC PROPERTIES OF TANTALUM OXIDE DOPED BARIUM TITANATE BASED MATERIALS

    Directory of Open Access Journals (Sweden)

    Md. Fakhrul Islam

    2013-01-01

    Full Text Available In this research, the causal relationship between the dielectric properties and the structural characteristics of 0.5 & 1.0 mole % Ta2O5 doped BaTiO3 based ceramic materials were investigated under different sintering conditions. Dielectric properties and microstructure of BaTio3 ceramics were significantly influenced by the addition of a small amount of Ta2O5. Dielectric properties were investigated by measuring the dielectric constant (k as a function of temperature and frequency. Percent theoretical density (%TD above 90 % was achieved for 0.5 and 1.0 mole %Ta2O5 doped BaTiO3. It was observed that the grain size decreased markedly above a doping concentration of 0.5 mole % Ta2O5. Although fine grain size down to 200 - 300 nm was attained, grain sizes in the range of 1-1.8µm showed the most alluring properties. The fine-grain quality and high density of the Ta2O5 doped BaTiO3 ceramic resulted in tenfold increase of dielectric constant. Stable value of dielectric constant as high as 13000 - 14000 was found in the temperature range of 55 to 80 °C, for 1.0 mole % Ta2O5 doped samples with corresponding shift of Curie point to ~82 °C. Experiments divulged that incorporation of a proper content of Ta2O5 in BaTiO3 could control the grain growth, shift the Curie temperature and hence significantly improve the dielectric property of the BaTiO3 ceramics.

  15. Structural Characteristics & Dielectric Properties of Tantalum Oxide Doped Barium Titanate Based Materials

    Directory of Open Access Journals (Sweden)

    Rubayyat Mahbub

    2012-11-01

    Full Text Available In this research, the causal relationship between the dielectric properties and the structural characteristics of 0.5 & 1.0 mol% Ta2O5 doped BaTiO3 based ceramic materials were investigated under different sintering conditions. Dielectric properties and microstructure of BaTio3 ceramics were significantly influenced by the addition of a small amount of Ta2O5. Dielectric properties were investigated by measuring the dielectric constant (k as a function of temperature and frequency. Percent theoretical density (%TD above 90% was achieved for 0.5 and 1.0 mol% Ta2O5 doped BaTiO3. It was observed that the grain size decreased markedly above a doping concentration of 0·5 mol% Ta2O5. Although fine grain size down to 200-300nm was attained, grain sizes in the range of 1-1.8µm showed the most alluring properties. The fine-grain quality and high density of the Ta2O5 doped BaTiO3 ceramic resulted in tenfold increase of dielectric constant. Stable value of dielectric constant as high as 13000-14000 was found in the temperature range of  55 to 80°C, for 1.0 mol% Ta2O5 doped samples with corresponding shift of Curie point to ~82°C. Experiments divulged that incorporation of a proper content of Ta2O5 in BaTiO3 could control the grain growth, shift the Curie temperature and hence significantly improve the dielectric property of the BaTiO3 ceramics.

  16. Positron trapping in heavily irradiated semiconductors

    International Nuclear Information System (INIS)

    Moser, P.; Pautrat, J.L.; Corbel, C.; Hautojarvi, P.

    1985-01-01

    Vacancy processes are studied in several heavily irradiated semiconductors. Specimens are ZnTe, CdTe, CdTe (In), InP, InP (Cr), InP (Zn) and Ge. Irradiations are made at 20 K using a 3 MeV Van de Graaff electron accelerator. Doses are 4 x 10 18 e - /cm 2 . Lifetime measurements are made at 77 K at each step of an isochronal annealing (30 min 20 K). In each specimen, the results show a significant increase of the lifetime (+ 30 at + 50 ps) which anneals out in different steps restoring the initial lifetime. The steps are sharp (ΔT/T=0.3) with the exception of InP, InP(Cr), InP(Zn), (ΔT/T=0.9). Tentative interpretations are given

  17. Vanadia-based SCR Catalysts Supported on Tungstated and Sulfated Zirconia: Influence of Doping with Potassium

    DEFF Research Database (Denmark)

    Due-Hansen, Johannes; Boghosian, Soghomon; Kustov, Arkadii

    2007-01-01

    A series of vanadium-based SCR catalysts supported on sulfated or tungstated ZrO2 were synthesized and characterized by means of N2-BET, XRD, NH3-TPD and in situ Raman spectroscopy. The effect of potassium doping on the properties of vanadia species is studied in detail. A number of catalyst...... and morphology, the surface composition and the molecular configuration of the dispersed vanadates. It was observed that poisoning with potassium had a negligible effect on the surface vanadate species (especially the V=O stretching frequency observed by in situ Raman spectroscopy) if supported on the sulfated...... the observed decrease in V=O stretching frequency and the higher proportion of dimers and higher polymers through coordination between K+ and two neighbouring V=O. The results suggest an increased resistance towards potassium doping for the vanadia-based catalysts supported on sulfated zirconia....

  18. Surface plasmon enhanced SWIR absorption at the ultra n-doped substrate/PbSe nanostructure layer interface

    Science.gov (United States)

    Wittenberg, Vladimir; Rosenblit, Michael; Sarusi, Gabby

    2017-08-01

    This work presents simulation results of the plasmon enhanced absorption that can be achieved in the short wavelength infrared (SWIR - 1200 nm to 1800 nm) spectral range at the interface between ultra-heavily doped substrates and a PbSe nanostructure non-epitaxial growth absorbing layer. The absorption enhancement simulated in this study is due to surface plasmon polariton (SPP) excitation at the interface between these ultra-heavily n-doped GaAs or GaN substrates, which are nearly semimetals to SWIR light, and an absorption layer made of PbSe nano-spheres or nano-columns. The ultra-heavily doped GaAs or GaN substrates are simulated as examples, based on the Drude-Lorentz permittivity model. In the simulation, the substrates and the absorption layer were patterned jointly to forma blazed lattice, and then were back-illuminated using SWIR with a central wavelength of 1500 nm. The maximal field enhancement achieved was 17.4 with a penetration depth of 40 nm. Thus, such architecture of an ultra-heavily doped semiconductor and infrared absorbing layer can further increase the absorption due to the plasmonic enhanced absorption effect in the SWIR spectral band without the need to use a metallic layer as in the case of visible light.

  19. Promoting functional foods as acceptable alternatives to doping: potential for information-based social marketing approach

    OpenAIRE

    Petróczi Andrea; Naughton Declan P; James Ricky

    2010-01-01

    Abstract Background Substances with performance enhancing properties appear on a continuum, ranging from prohibited performance enhancing drugs (PED) through dietary supplements to functional foods (FF). Anti-doping messages designed to dissuade athletes from using PEDs have been typically based on moralising sport competition and/or employing scare campaigns with focus on the negative consequences. Campaigns offering comparable and acceptable alternatives are nonexistent, nor are athletes he...

  20. Effect of cadmium doping on some properties of glass-insulated bismuth-based microwires

    International Nuclear Information System (INIS)

    Meglei, D.; Dyntu, M.

    2011-01-01

    Full text: According to the literature, semiconductor converters based on films and wire crystals are widely used in present-day microelectronics. However, the production of efficient semiconductor converters requires crystals of high structural perfection with a given composition and desired electrical and mechanical properties. In this work, we describe the study of the perfection of the microstructure and mechanical properties of glass-insulated microwires based on Bi doped with cadmium (Cd) and the technique of preparation of micro resistors suitable for instrumentation applications. Microscopic studies of ground, polished, and chemically etched microwires doped with cadmium showed that they have smooth cylindrical surfaces in the entire range of diameters. Sizes of defects in the form of micropores, microcracks, dislocations, and twins on their surface are much smaller than those of pure bismuth microwire. It is also found that the tendency to twinning and the number and size of surface defects decrease with decreasing diameters; at the same time, their homogeneity increases. The tensile strength of the studied microwires with glass insulation is high for all tested diameters and ranges within 33.274.1 kg/mm with respect to internal diameters of 5.6 21.2 m; in addition, they withstand a breaking force up to 130 g and more, whereas the samples of pure bismuth microwires withstood a force up to 80 g. It is also found that the tensile strength of cadmium doped microwires is significantly higher than that of undoped samples. The bending strength as a measure of elasticity was determined using a special installation according to the critical bending radius of the sample at which the sample integrity is violated. The results of bending tests showed that, with increasing diameter of the doped samples, the critical radius linearly increases; that is, in this case, the elasticity increases with decreasing diameter. Metallographic analysis revealed that cadmium in the

  1. Promoting functional foods as acceptable alternatives to doping: potential for information-based social marketing approach

    Directory of Open Access Journals (Sweden)

    Petróczi Andrea

    2010-11-01

    Full Text Available Abstract Background Substances with performance enhancing properties appear on a continuum, ranging from prohibited performance enhancing drugs (PED through dietary supplements to functional foods (FF. Anti-doping messages designed to dissuade athletes from using PEDs have been typically based on moralising sport competition and/or employing scare campaigns with focus on the negative consequences. Campaigns offering comparable and acceptable alternatives are nonexistent, nor are athletes helped in finding these for themselves. It is timely that social marketing strategies for anti-doping prevention and intervention incorporate media messages that complement the existing approaches by promoting comparable and acceptable alternatives to doping. To facilitate this process, the aim of this study was to ascertain whether a single exposure knowledge-based information intervention led to increased knowledge and subsequently result in changes in beliefs and automatic associations regarding performance enhancements. Methods In a repeated measure design, 115 male recreational gym users were recruited and provided with a brief information pamphlet on nitrite/nitrate and erythropoietin as a comparison. Measures of knowledge, beliefs and automatic associations were taken before and after the intervention with at least 24 hours between the two assessments. The psychological tests included explicit measures of beliefs and cognitive attitudes toward FF and PED using a self-reported questionnaire and computerised assessments of automatic associations using the modified and shortened version of the Implicit Association Test. Results The information based intervention significantly increased knowledge (p p p Conclusion Evidence was found that even a single exposure to a persuasive positive message can lead to belief change and can create new or alter existing associations - but only in the specific domain. Interventions to change outcome expectations in a positive

  2. The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes

    Energy Technology Data Exchange (ETDEWEB)

    Chen, P.; Zhao, D. G., E-mail: dgzhao@red.semi.ac.cn; Jiang, D. S.; Zhu, J. J.; Liu, Z. S.; Yang, J.; Li, X.; Le, L. C.; He, X. G.; Liu, W.; Li, X. J.; Liang, F. [State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Zhang, B. S.; Yang, H. [Key Laboratory of Nano-devices and Applications of CAS, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Zhang, Y. T.; Du, G. T. [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023 (China)

    2016-03-15

    In order to reduce the internal optical loss of InGaN laser diodes, an unintentionally doped GaN (u-GaN) interlayer is inserted between InGaN/GaN multiple quantum well active region and Al{sub 0.2}Ga{sub 0.8}N electron blocking layer. The thickness design of u-GaN interlayer matching up with background doping level for improving laser performance is studied. It is found that a suitably chosen u-GaN interlayer can well modulate the optical absorption loss and optical confinement factor. However, if the value of background doping concentration of u-GaN interlayer is too large, the output light power may decrease. The analysis of energy band diagram of a LD structure with 100 nm u-GaN interlayer shows that the width of n-side depletion region decreases when the background concentration increases, and may become even too small to cover whole MQW, resulting in a serious decrease of the output light power. It means that a suitable interlayer thickness design matching with the background doping level of u-GaN interlayer is significant for InGaN-based laser diodes.

  3. The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes

    Directory of Open Access Journals (Sweden)

    P. Chen

    2016-03-01

    Full Text Available In order to reduce the internal optical loss of InGaN laser diodes, an unintentionally doped GaN (u-GaN interlayer is inserted between InGaN/GaN multiple quantum well active region and Al0.2Ga0.8N electron blocking layer. The thickness design of u-GaN interlayer matching up with background doping level for improving laser performance is studied. It is found that a suitably chosen u-GaN interlayer can well modulate the optical absorption loss and optical confinement factor. However, if the value of background doping concentration of u-GaN interlayer is too large, the output light power may decrease. The analysis of energy band diagram of a LD structure with 100 nm u-GaN interlayer shows that the width of n-side depletion region decreases when the background concentration increases, and may become even too small to cover whole MQW, resulting in a serious decrease of the output light power. It means that a suitable interlayer thickness design matching with the background doping level of u-GaN interlayer is significant for InGaN-based laser diodes.

  4. A novel flexible tactile sensor based on Ce-doped BaTiO3 nanofibers

    Science.gov (United States)

    Zhuang, Yongyong; Xu, Zhuo; Fu, Xiaotian; Li, Fei; Li, Jinglei; Liao, Zhipeng; Liu, Weihua

    2017-07-01

    The performance of a robotic hand is severely limited by the tactile feedback information similar to a human hand. Hence, a novel and robust tactile sensor has been developed to cope with the challenge of robotic hand technology. Piezoelectric material is proposed as a suitable candidate for a new efficient tactile sensor due to its excellent piezoelectric properties. In this paper, a novel flexible tactile sensor based on Ce-doped BTO nanofibers was developed. The doping mechanism of cerium ions and the working process of the sensor were analysed. The results showed that sheer stress had no contribution to the sensor, this indicated that the sensor was easy to control according to the individual’s wish. The output voltage of the sensor could reach up to 0.078 V which showed great potential for the future of intelligent robot skin application.

  5. Tunable ultraviolet solid-state dye laser based on MPMMA doped with pyrromethene 597

    International Nuclear Information System (INIS)

    Jiang, Y G; Fan, R W; Xia, Y Q; Chen, D Y

    2011-01-01

    Solid-state dye sample based on modified polymethyl methacrylate (MPMMA) co-doped with pyrromethene 597 (PM597), and coumarin 460 (C460) were prepared. A frequency-doubled pulsed Nd:YAG laser is used to pump solid-state dye sample, and the narrow linewidth dye laser of 94.4 mJ was obtained at 582 nm in an oscillator-amplifier configuration. Using a beta-BaB 2 O 4 (BBO) crystal to frequency double the dye laser into ultraviolet (UV), a tuning range from 279 to 305 nm was demonstrated from a single doped PM597 dye. To the best of our knowledge, the UV tuning range is the best under the same condition so far. The conversion slope efficiency from solid dye laser to UV laser was 8.9% and the highest UV laser output energy reached 6.94 mJ at 291 nm

  6. New Polymer Electrolyte Membranes Based on Acid Doped PBI For Fuel Cells Operating above 100°C

    DEFF Research Database (Denmark)

    Li, Qingfeng

    2003-01-01

    The technical achievement and challenges for the PEMFC technology based on perfluorosulfonic acid (PFSA) polymer membranes (e.g. Nafion®) are briefly discussed. The newest development for alternative polymer electrolytes for operation above 100°C. As one of the successful approaches to high...... operational temperatures, the development and evaluation of acid doped PBI membranes are reviewed, covering polymer synthesis, membrane casting, acid doping, physiochemical characterization and fuel cell tests....

  7. All ITO-based transparent resistive switching random access memory using oxygen doping method

    International Nuclear Information System (INIS)

    Kim, Hee-Dong; Yun, Min Ju; Kim, Sungho

    2015-01-01

    Recently, transparent memory would be useful in invisible electronics. In this work, for the first time we present a feasibility of stable unipolar resistive switching (RS) characteristics with reset current of sub-micron ampere for the fully transparent ITO/oxygen-doped ITO/ITO memory capacitors, i.e., all ITO structures, produced by sputtering method, which shows a high optical transmittance of approximately 80% in the visible region as well as near ultra-violet region. In addition, in a RS test to evaluate a reliability for the proposed memory devices, we observed a stable endurance of >100 cycles and a retention time of >10 4  s at 85 °C, with a current ratio of ∼10 2 to ∼10 3 . This result indicates that this transparent memory by engineering the amount of oxygen ions within the ITO films could be a milestone for future see-through electronic devices. - Highlights: • The resistive switching characteristics of the transparent ITO/O-doped ITO/ITO RRAM cells have investigated. • All ITO-based RRAM cell is achieved using oxygen doping method. • Good endurance and long retention time were observed.

  8. Nitrogen-Doped Carbon for Red Phosphorous Based Anode Materials for Lithium Ion Batteries

    Directory of Open Access Journals (Sweden)

    Jiaoyang Li

    2018-01-01

    Full Text Available Serving as conductive matrix and stress buffer, the carbon matrix plays a pivotal role in enabling red phosphorus to be a promising anode material for high capacity lithium ion batteries and sodium ion batteries. In this paper, nitrogen-doping is proved to effective enhance the interface interaction between carbon and red phosphorus. In detail, the adsorption energy between phosphorus atoms and oxygen-containing functional groups on the carbon is significantly reduced by nitrogen doping, as verified by X-ray photoelectron spectroscopy. The adsorption mechanisms are further revealed on the basis of DFT (the first density functional theory calculations. The RPNC (red phosphorus/nitrogen-doped carbon composite material shows higher cycling stability and higher capacity than that of RPC (red phosphorus/carbon composite anode. After 100 cycles, the RPNC still keeps discharge capacity of 1453 mAh g−1 at the current density of 300 mA g−1 (the discharge capacity of RPC after 100 cycles is 1348 mAh g−1. Even at 1200 mA g−1, the RPNC composite still delivers a capacity of 1178 mAh g−1. This work provides insight information about the interface interactions between composite materials, as well as new technology develops high performance phosphorus based anode materials.

  9. Valence band states in Si-based p-type delta-doped field effect transistors

    International Nuclear Information System (INIS)

    Martinez-Orozco, J C; Vlaev, Stoyan J

    2009-01-01

    We present tight-binding calculations of the hole level structure of δ-doped Field Effect Transistor in a Si matrix within the first neighbors sp 3 s* semi-empirical tight-binding model including spin. We employ analytical expressions for Schottky barrier potential and the p-type δ-doped well based on a Thomas-Fermi approximation, we consider these potentials as external ones, so in the computations they are added to the diagonal terms of the tight-binding Hamiltonian, by this way we have the possibility to study the energy levels behavior as we vary the backbone parameters in the system: the two-dimensional impurity density (p 2d ) of the p-type δ-doped well and the contact voltage (V c ). The aim of this calculation is to demonstrate that the tight-binding approximation is suitable for device characterization that permits us to propose optimal values for the input parameters involved in the device design.

  10. Affinity-based biosensors in sport medicine and doping control analysis.

    Science.gov (United States)

    Mazzei, Franco; Antiochia, Riccarda; Botrè, Francesco; Favero, Gabriele; Tortolini, Cristina

    2014-01-01

    Affinity-based biosensors (ABBs) have started to be considered in sport medicine and doping control analysis because they are cheap, easy to use and sufficiently selective analytical devices, characterized by a reversible interaction with the analyte under investigation allowing the use of the same sensor for multiple analyses. In this review we describe the main categories of substances reported in the World Anti-Doping Agency Prohibited List and how ABBs may contribute to their detection. Although several ABBs proposed in the last few years display limit of detections that are in principle matching the World Anti-Doping Agency requirements, their application in the framework of 'traditional' antidoping tests seems quite unlikely, mainly because of the still insufficient selectivity especially in the case of 'pseudo-endogenous' compounds, and on the lack of complete information regarding potential matrix effects in real samples and following their routine use. At the same time, ABBs could contribute to fill a significant information gap concerning complementary evidence that can be obtained from their use 'on the spot', as well as to preselect a risk population of individuals to be targeted for a full antidoping test; while in sport medicine they could contribute to obtaining analytical information of physiological relevance from the measurement of specific parameters or markers before, during and after physical exercise.

  11. Valence band states in Si-based p-type delta-doped field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Martinez-Orozco, J C; Vlaev, Stoyan J, E-mail: jcmover@correo.unam.m [Unidad Academica de Fisica, Universidad Autonoma de Zacatecas, Calzada Solidaridad esquina con Paseo la Bufa S/N, C.P. 98060, Zacatecas, Zac. (Mexico)

    2009-05-01

    We present tight-binding calculations of the hole level structure of delta-doped Field Effect Transistor in a Si matrix within the first neighbors sp{sup 3}s* semi-empirical tight-binding model including spin. We employ analytical expressions for Schottky barrier potential and the p-type delta-doped well based on a Thomas-Fermi approximation, we consider these potentials as external ones, so in the computations they are added to the diagonal terms of the tight-binding Hamiltonian, by this way we have the possibility to study the energy levels behavior as we vary the backbone parameters in the system: the two-dimensional impurity density (p{sub 2d}) of the p-type delta-doped well and the contact voltage (V{sub c}). The aim of this calculation is to demonstrate that the tight-binding approximation is suitable for device characterization that permits us to propose optimal values for the input parameters involved in the device design.

  12. Improving the electrochemical properties of nanosized LiFePO4-based electrode by boron doping

    International Nuclear Information System (INIS)

    Trócoli, Rafael; Franger, Sylvain; Cruz, Manuel; Morales, Julián; Santos-Peña, Jesús

    2014-01-01

    Highlights: • Thermal treatment of boron phosphate with LiFePO 4 provides electrode materials with high performance in lithium half-cells: 160 mAh·g -1 (90% of theoretical capacity) under C/5 rate • The products are composites containing boron-modified LiFePO 4 , FePO 4 and an amorphous phase with ionic diffusion properties • The boron treatment affects textural, conductive and lithium diffusivity of the electrode material leading to higher performance • A limited boron-doping of the phospholivine structure is observed - Abstract: Electrode materials with homogeneous distribution of boron were obtained by heating mixtures of nanosized carbon-coated lithium iron phosphate and BPO 4 in 3-9% weight at 700 °C. The materials can be described as nanocomposites containing i) LiFePO 4 , possibly doped with a low amount of boron, ii) FePO 4 and iii) an amorphous layer based on Li 4 P 2 O 7 -derived material that surrounds the phosphate particles. The thermal treatment with BPO 4 also triggered changes in the carbon coating graphitic order. Galvanostatic and voltammetric studies in lithium half-cells showed smaller polarisation, higher capacity and better cycle life for the boron-doped composites. For instance, one of the solids, called B 6 -LiFePO 4 , provided close to 150 and 140 mAhg -1 (87% and 81% of theoretical capacity, respectively) under C/2.5 and C regimes after several cycles. Improved specific surface area, carbon graphitization, conductivity and lithium ion diffusivity in the boron-doped phospholivine network account for this excellent rate performance. The properties of an amorphous layer surrounding the phosphate particles also account for such higher performance

  13. Linear all-fiber temperature sensor based on macro-bent erbium doped fiber

    International Nuclear Information System (INIS)

    Hajireza, P; Cham, C L; Kumar, D; Abdul-Rashid, H A; Emami, S D; Harun, S W

    2010-01-01

    A new all fiber temperature sensor is proposed and demonstrated based on a pair of 1 meter erbium-doped fiber (EDF), which are respectively macro-bent and straight. The sensor has a linear normalized loss (dB) response to temperature at 6.5 mm bending radius and 1580 nm input wavelength. The main advantage of this sensor is high temperature resolution (less than 1°C) and sensitivity (0.03 dB/°C) due to combination of temperature dependence of EDF and bending loss. The proposed silica based sensor, has the potential for wide range and high temperature applications in harsh environments

  14. Thermal Conductivity and Specific Heat Capacity of Dodecylbenzenesulfonic Acid-Doped Polyaniline Particles—Water Based Nanofluid

    Directory of Open Access Journals (Sweden)

    Tze Siong Chew

    2015-07-01

    Full Text Available Nanofluid has attracted great attention due to its superior thermal properties. In this study, chemical oxidative polymerization of aniline was carried out in the presence of dodecylbenzenesulfonic acid (DBSA as a dopant. Particles of DBSA-doped polyaniline (DBSA-doped PANI with the size range of 15 to 50 nm were obtained, as indicated by transmission electron microscope (TEM. Results of ultra violet-visible (UV-Vis absorption and Fourier transform infrared (FTIR spectroscopies as well as thermogravimetric analysis showed that PANI nanoparticles were doped with DBSA molecules. The doping level found was 36.8%, as calculated from elemental analysis data. Thermal conductivity of water was enhanced by 5.4% when dispersed with 1.0 wt% of DBSA-PANI nanoparticles. Specific heat capacity of water-based nanofluids decreased with increasing amount of DBSA-PANI nanoparticles.

  15. Synthesis and characterization of arsenic-doped cysteine-capped thoria-based nanoparticles

    International Nuclear Information System (INIS)

    Pereira, F. J.; Díez, M. T.; Aller, A. J.

    2013-01-01

    Thoria materials have been largely used in the nuclear industry. Nonetheless, fluorescent thoria-based nanoparticles provide additional properties to be applied in other fields. Thoria-based nanoparticles, with and without arsenic and cysteine, were prepared in 1,2-ethanediol aqueous solutions by a simple precipitation procedure. The synthesized thoria-based nanoparticles were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), energy dispersive X-ray spectrometry (ED-XRS), Raman spectroscopy, Fourier transform infrared (FT-IR) spectroscopy and fluorescence microscopy. The presence of arsenic and cysteine, as well as the use of a thermal treatment facilitated fluorescence emission of the thoria-based nanoparticles. Arsenic-doped and cysteine-capped thoria-based nanoparticles prepared in 2.5 M 1,2-ethanediol solutions and treated at 348 K showed small crystallite sizes and strong fluorescence. However, thoria nanoparticles subjected to a thermal treatment at 873 K also produced strong fluorescence with a very narrow size distribution and much smaller crystallite sizes, 5 nm being the average size as shown by XRD and TEM. The XRD data indicated that, even after doping of arsenic in the crystal lattice of ThO 2 , the samples treated at 873 K were phase pure with the fluorite cubic structure. The Raman and FT-IR spectra shown the most characteristics vibrational peaks of cysteine together with other peaks related to the bonds of this molecule to thoria and arsenic when present

  16. Promoting functional foods as acceptable alternatives to doping: potential for information-based social marketing approach.

    Science.gov (United States)

    James, Ricky; Naughton, Declan P; Petróczi, Andrea

    2010-11-10

    Substances with performance enhancing properties appear on a continuum, ranging from prohibited performance enhancing drugs (PED) through dietary supplements to functional foods (FF). Anti-doping messages designed to dissuade athletes from using PEDs have been typically based on moralising sport competition and/or employing scare campaigns with focus on the negative consequences. Campaigns offering comparable and acceptable alternatives are nonexistent, nor are athletes helped in finding these for themselves. It is timely that social marketing strategies for anti-doping prevention and intervention incorporate media messages that complement the existing approaches by promoting comparable and acceptable alternatives to doping. To facilitate this process, the aim of this study was to ascertain whether a single exposure knowledge-based information intervention led to increased knowledge and subsequently result in changes in beliefs and automatic associations regarding performance enhancements. In a repeated measure design, 115 male recreational gym users were recruited and provided with a brief information pamphlet on nitrite/nitrate and erythropoietin as a comparison. Measures of knowledge, beliefs and automatic associations were taken before and after the intervention with at least 24 hours between the two assessments. The psychological tests included explicit measures of beliefs and cognitive attitudes toward FF and PED using a self-reported questionnaire and computerised assessments of automatic associations using the modified and shortened version of the Implicit Association Test. The information based intervention significantly increased knowledge (p social marketing campaigns for drug free sport should follow appropriate market segmentation and use targeted messages via promoting the natural form as opposed to the purified form of the main active ingredient.

  17. Graphene Oxide-Based Q-Switched Erbium-Doped Fiber Laser

    International Nuclear Information System (INIS)

    Yap, Y. K.; Harun, S. W.; Ahmad, H.; Huang, N. M.

    2013-01-01

    We demonstrate a pulsed ring erbium-doped fiber laser based on graphene oxide (GO), employing a simplified Hummer's method to synthesize the GO via chemical oxidation of graphite flakes at room temperature. By dipping a fiber ferrule end face onto the GO suspension, GO is successfully coated onto the end face, making it a simple saturable absorption device. A stable Q-switched pulsed fiber laser is achieved with a low pump threshold of 9.5 mW at 980 nm. The pulse repetition rate ranges from 16.0 to 57.0 kHz. The pulse width and the pulse energy are studied and discussed

  18. Fibre Tip Sensors for Localised Temperature Sensing Based on Rare Earth-Doped Glass Coatings

    Directory of Open Access Journals (Sweden)

    Erik P. Schartner

    2014-11-01

    Full Text Available We report the development of a point temperature sensor, based on monitoring upconversion emission from erbium:ytterbium-doped tellurite coatings on the tips of optical fibres. The dip coating technique allows multiple sensors to be fabricated simultaneously, while confining the temperature-sensitive region to a localised region on the end-face of the fibre. The strong response of the rare earth ions to changing temperature allows a resolution of 0.1–0.3 °C to be recorded over the biologically relevant range of temperatures from 23–39 °C.

  19. Lithium ion conducting biopolymer electrolyte based on pectin doped with Lithium nitrate

    Science.gov (United States)

    Manjuladevi, R.; Selvin, P. Christopher; Selvasekarapandian, S.; Shilpa, R.; Moniha, V.

    2018-04-01

    The Biopolymer electrolyte based on pectin doped with lithium nitrate of different concentrations have been prepared by solution casting technique. The decrease in crystalline nature of the biopolymer has been identified by XRD analyses. The complex formation between the polymer and the salt has been revealed using FTIR analysis. The ionic conductivity has been explored using A.C. impedance spectroscopy which reveals that the biopolymer containing 30 wt% Pectin: 70wt%LiNO3 has highest ionic conductivity of 3.97 × 10-3 Scm-1.

  20. Ionically conducting Er3+-doped DNA-based biomembranes for electrochromic devices

    International Nuclear Information System (INIS)

    Leones, R.; Fernandes, M.; Sentanin, F.; Cesarino, I.; Lima, J.F.; Zea Bermudez, V. de; Pawlicka, A.; Magon, C.J.; Donoso, J.P.; Silva, M.M.

    2014-01-01

    Biopolymer-based membranes have particular interest due to their biocompatibility, Biodegradability, easy extraction from natural resources and low cost. The incorporation of Er 3+ ions into natural macromolecule hosts with the purpose of producing highly efficient emitting phosphors is of widespread interest in materials science, due to their important roles in display devices. Thus, biomembranes may be viewed as innovative materials for the area of optics. This paper describes studies of luminescent material DNA-based membranes doped with erbium triflate and demonstrates that their potential technological applications may be expanded to electrochromic devices. The sample that exhibits the highest ionic conductivity is DNA 10 Er, (1.17 × 10 −5 and 7.76 × 10 −4 S.cm −1 at 30 and 100 °C, respectively). DSC, XRD and POM showed that the inclusion of the guest salt into DNA does not change significantly its amorphous nature. The overall redox stability was ca. 2.0 V indicating that these materials have an acceptable stability window for applications in solid state electrochemical devices. The EPR analysis suggested that the Er 3+ ions are distributed in various environments. A small ECD comprising a Er 3+ -doped DNA-based membrane was assembled and tested by cyclic voltammetry and chronoamperometry. These electrochemical analyses revealed a pale blue color to transparent color change and a decrease of the charge density from -4.0 to -1.2 mC.cm −2 during 4000 color/bleaching cycles

  1. Anion exchange membrane based on alkali doped poly(2,5-benzimidazole) for fuel cell

    CSIR Research Space (South Africa)

    Luo, H

    2012-02-01

    Full Text Available The properties of alkali doped poly(2,5-benzimidazole) membrane with different alkali doping level for fuel cell application is reported in this work. The alkali doping level played an important role for the ion conductivity of the membrane. The ion...

  2. Materials system for intermediate temperature solid oxide fuel cells based on doped lanthanum-gallate electrolyte

    Science.gov (United States)

    Gong, Wenquan

    2005-07-01

    The objective of this work was to identify a materials system for intermediate temperature solid oxide fuel cells (IT-SOFCs). Towards this goal, alternating current complex impedance spectroscopy was employed as a tool to study electrode polarization effects in symmetrical cells employing strontium and magnesium doped lanthanum gallate (LSGM) electrolyte. Several cathode materials were investigated including strontium doped lanthanum manganite (LSM), Strontium and iron doped lanthanum cobaltate (LSCF), LSM-LSGM, and LSCF-LSGM composites. Investigated Anode materials included nickel-gadolinium or lanthanum doped cerium oxide (Ni-GDC, or Ni-LDC) composites. The ohmic and the polarization resistances of the symmetrical cells were obtained as a function of temperature, time, thickness, and the composition of the electrodes. Based on these studies, the single phase LSM electrode had the highest polarization resistance among the cathode materials. The mixed-conducting LSCF electrode had polarization resistance orders of magnitude lower than that of the LSM-LSGM composite electrodes. Although incorporating LSGM in the LSCF electrode did not reduce the cell polarization resistance significantly, it could reduce the thermal expansion coefficient mismatch between the LSCF electrodes and LSGM electrolyte. Moreover, the polarization resistance of the LSCF electrode decreased asymptotically as the electrode thickness was increased thus suggesting that the electrode thickness needed not be thicker than this asymptotic limit. On the anode side of the IT-SOFC, Ni reacted with LSGM electrolyte, and lanthanum diffusion occurred from the LSGM electrolyte to the GDC barrier layer, which was between the LSGM electrolyte and the Ni-composite anode. However, LDC served as an effective barrier layer. Ni-LDC (70 v% Ni) anode had the largest polarization resistance, while all other anode materials, i.e. Ni-LDC (50 v% Ni), Ni-GDC (70 v% NO, and Ni-GDC (50 v% Ni), had similar polarization

  3. Effect of the Channel Length on the Transport Characteristics of Transistors Based on Boron-Doped Graphene Ribbons

    Directory of Open Access Journals (Sweden)

    Paolo Marconcini

    2018-04-01

    Full Text Available Substitutional boron doping of devices based on graphene ribbons gives rise to a unipolar behavior, a mobility gap, and an increase of the I O N / I O F F ratio of the transistor. Here we study how this effect depends on the length of the doped channel. By means of self-consistent simulations based on a tight-binding description and a non-equilibrium Green’s function approach, we demonstrate a promising increase of the I O N / I O F F ratio with the length of the channel, as a consequence of the different transport regimes in the ON and OFF states. Therefore, the adoption of doped ribbons with longer aspect ratios could represent a significant step toward graphene-based transistors with an improved switching behavior.

  4. Boron doping induced thermal conductivity enhancement of water-based 3C-Si(B)C nanofluids.

    Science.gov (United States)

    Li, Bin; Jiang, Peng; Zhai, Famin; Chen, Junhong; Bei, Guo-Ping; Hou, Xinmei; Chou, Kuo-Chih

    2018-06-04

    In this paper, the fabrication and thermal conductivity of water-based nanofluids using boron (B) doped SiC as dispersions are reported. Doping B into β-SiC phase leads to the shrinkage of SiC lattice due to the substitution of Si atoms (radius: 0.134 nm) by smaller B atoms (radius: 0.095 nm). The presence of B in SiC phase also promotes crystallization and grain growth of obtained particles. The tailored crystal structure and morphology of B doped SiC nanoparticles are beneficial for the thermal conductivity improvement of the nanofluids by using them as dispersions. Serving B doped SiC nanoparticles as dispersions for nanofluids, a remarkable improvement of the stability was achieved in SiC-B6 nanofluid at pH 11 by means of the Zeta potential measurement. Dispersing B doped SiC nanoparticles in water based fluids, the thermal conductivity of the as prepared nanofluids containing only 0.3 vol. % SiC-B6 nanoparticles is remarkably raised up to 39.3 % at 30 °C compared to the base fluids and is further enhanced with the increased temperature. The main reasons for the improvement of thermal conductivity of SiC-B6 nanofluids are more stable dispersion and intensive charge ions vibration around the surface of nanoparticles as well as the enhanced thermal conductivity of the SiC-B dispersions. © 2018 IOP Publishing Ltd.

  5. A high-performance supercapacitor electrode based on N-doped porous graphene

    Science.gov (United States)

    Dai, Shuge; Liu, Zhen; Zhao, Bote; Zeng, Jianhuang; Hu, Hao; Zhang, Qiaobao; Chen, Dongchang; Qu, Chong; Dang, Dai; Liu, Meilin

    2018-05-01

    The development of high-performance supercapacitors (SCs) often faces some contradictory and competing requirements such as excellent rate capability, long cycling life, and high energy density. One effective strategy is to explore electrode materials of high capacitance, electrode architectures of fast charge and mass transfer, and electrolytes of wide voltage window. Here we report a facile and readily scalable strategy to produce high-performance N-doped graphene with a high specific capacitance (∼390 F g-1). A symmetric SC device with a wide voltage window of 3.5 V is also successfully fabricated based on the N-doped graphene electrode. More importantly, the as-assembled symmetric SC delivers a high energy density of 55 Wh kg-1 at a power density of 1800 W kg-1 while maintaining superior cycling life (retaining 96.6% of the initial capacitance after 20,000 cycles). Even at a power density as high as 8800 W kg-1, it still retains an energy density of 29 Wh kg-1, higher than those of previously reported graphene-based symmetric SCs.

  6. Perspective: Toward efficient GaN-based red light emitting diodes using europium doping

    Science.gov (United States)

    Mitchell, Brandon; Dierolf, Volkmar; Gregorkiewicz, Tom; Fujiwara, Yasufumi

    2018-04-01

    While InGaN/GaN blue and green light-emitting diodes (LEDs) are commercially available, the search for an efficient red LED based on GaN is ongoing. The realization of this LED is crucial for the monolithic integration of the three primary colors and the development of nitride-based full-color high-resolution displays. In this perspective, we will address the challenges of attaining red luminescence from GaN under current injection and the methods that have been developed to circumvent them. While several approaches will be mentioned, a large emphasis will be placed on the recent developments of doping GaN with Eu3+ to achieve an efficient red GaN-based LED. Finally, we will provide an outlook to the future of this material as a candidate for small scale displays such as mobile device screens or micro-LED displays.

  7. A Possibility for Construction of an Iodine Cleaning System Based on Doping for π-Conjugated Polymers

    Directory of Open Access Journals (Sweden)

    Hiromasa Goto

    2011-05-01

    Full Text Available An iodine accumulation method using polyaniline (PANI and a textile composite is proposed. PANI/pulp paper sheets prepared by a paper making technique are suitable for iodine adsorption, because of good processability. The PANI-based paper sheets can be applied for iodine cleanup as air filters, water filters, and floorcloth. This concept may lead to a development of an iodine cleaning machine or iodine shield cloth based on π-conjugated polymer composites. In-situ vapor phase doping of iodine, observation of surface images, and IR measurements are carried out to examine iodine doping function for the PANI/pulp paper sheets.

  8. Formaldehyde sensor based on Ni-doped tetrapod-shaped ZnO nanopowder induced by external magnetic field

    Science.gov (United States)

    Bai, Zikui; Xie, Changsheng; Hu, Mulin; Zhang, Shunping

    2008-12-01

    The sensors based on Ni-doped ZnO nanopowder with tetrapod-shape (T-ZnO) were fabricated by screen-printing technique with external magnetic field in different direction. The morphologies and crystal structures of the thick film were characterized by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FE-SEM), respectively. Gas-sensing property of sensors responded to 100 ppm formaldehyde was also detected. The results show that the direction of magnetic field has crucial effect on the sensor sensitivity. The sensors based on 5 wt% Ni-doped T-ZnO induced by magnetic field in parallel direction to the thick film surface, has the optimization sensitivity, the shortest response and recovery time, which are 10.6, 16 and 15 s, respectively. The magnetic-field induction model and the gas-sensing mechanism of the Ni-doped T-ZnO are proposed.

  9. Multicolor Tunable Luminescence Based on Tb3+/Eu3+ Doping through a Facile Hydrothermal Route.

    Science.gov (United States)

    Wang, Chao; Zhou, Ting; Jiang, Jing; Geng, Huiyuan; Ning, Zhanglei; Lai, Xin; Bi, Jian; Gao, Daojiang

    2017-08-09

    Ln 3+ -doped fluoride is a far efficient material for realizing multicolor emission, which plays an important part in full-color displays, biolabeling, and MRI. However, studies on the multicolor tuning properties of Ln 3+ -doped fluoride are mainly concentrated on a complicated process using three or more dopants, and the principle of energy transfer mechanism is still unclear. Herein, multicolor tunable emission is successfully obtained only by codoping with Tb 3+ and Eu 3+ ions in β-NaGdF 4 submicrocrystals via a facile hydrothermal route. Our work reveals that various emission colors can be obtained and tuned from red, orange-red, pink, and blue-green to green under single excitation energy via codoping Tb 3+ and Eu 3+ with rationally changed Eu 3+ /Tb 3+ molar ratio due to the energy transfer between Tb 3+ and Eu 3+ ions in the β-NaGdF 4 host matrix. Meanwhile, the energy transfer mechanism in β-NaGdF 4 : x Eu 3+ /y Tb 3+ (x + y = 5 mol %) submicrocrystals is investigated. Our results evidence the potential of the dopants' distribution density as an effective way for analyzing energy transfer and multicolor-controlled mechanism in other rare earth fluoride luminescence materials. Discussions on the multicolor luminescence under a certain dopant concentration based on single host and wavelength excitation are essential toward the goal of the practical applications in the field of light display systems and optoelectronic devices.

  10. Non-doped white organic light-emitting diodes based on aggregation-induced emission

    Energy Technology Data Exchange (ETDEWEB)

    Chen Shuming; Kwok, Hoi Sing [Center for Display Research, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong); Zhao Zujin; Tang, Ben Zhong, E-mail: eekwok@ust.h [Department of Chemistry, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

    2010-03-10

    Non-doped white organic light-emitting diodes (WOLEDs) based on newly synthesized bluish-green light-emitting material 1,3,6,8-tetrakis [4-(1,2,2-triphenylvinyl)phenyl]pyrene (TTPEPy) and red light-emitting material 4-(4-(1,2,2-triphenylvinyl)phenyl)-7-(5-(4-(1,2,2-triphenylvinyl) phenyl)thiophen-2-yl)benzo[c][1,2,5]thiadiazole (BTPETTD) have been demonstrated. A maximum efficiency of 7.4 cd A{sup -1}, 4 lm W{sup -1} and brightness of 18 000 cd m{sup -2} have been achieved by employing 3 nm thick 4, 4'-bis [N-(1-naphthyl-1-)-N-phenyl-amino]- biphenyl (NPB) as an electron-blocking layer. The WOLEDs exhibit a high colour rendering index of 90 and moderate colour stability with 1931 Commision International de L'Eclairage coordinates changing from (0.41, 0.41) to (0.38, 0.40) over a wide range of driving voltages. Moreover, the non-doped WOLEDs enjoy a reduced efficiency roll-off due to their nature of aggregation-induced emission.

  11. Non-doped white organic light-emitting diodes based on aggregation-induced emission

    International Nuclear Information System (INIS)

    Chen Shuming; Kwok, Hoi Sing; Zhao Zujin; Tang, Ben Zhong

    2010-01-01

    Non-doped white organic light-emitting diodes (WOLEDs) based on newly synthesized bluish-green light-emitting material 1,3,6,8-tetrakis [4-(1,2,2-triphenylvinyl)phenyl]pyrene (TTPEPy) and red light-emitting material 4-(4-(1,2,2-triphenylvinyl)phenyl)-7-(5-(4-(1,2,2-triphenylvinyl) phenyl)thiophen-2-yl)benzo[c][1,2,5]thiadiazole (BTPETTD) have been demonstrated. A maximum efficiency of 7.4 cd A -1 , 4 lm W -1 and brightness of 18 000 cd m -2 have been achieved by employing 3 nm thick 4, 4'-bis [N-(1-naphthyl-1-)-N-phenyl-amino]- biphenyl (NPB) as an electron-blocking layer. The WOLEDs exhibit a high colour rendering index of 90 and moderate colour stability with 1931 Commision International de L'Eclairage coordinates changing from (0.41, 0.41) to (0.38, 0.40) over a wide range of driving voltages. Moreover, the non-doped WOLEDs enjoy a reduced efficiency roll-off due to their nature of aggregation-induced emission.

  12. DNA base pair resolution measurements using resonance energy transfer efficiency in lanthanide doped nanoparticles.

    Directory of Open Access Journals (Sweden)

    Aleksandra Delplanque

    Full Text Available Lanthanide-doped nanoparticles are of considerable interest for biodetection and bioimaging techniques thanks to their unique chemical and optical properties. As a sensitive luminescence material, they can be used as (bio probes in Förster Resonance Energy Transfer (FRET where trivalent lanthanide ions (La3+ act as energy donors. In this paper we present an efficient method to transfer ultrasmall (ca. 8 nm NaYF4 nanoparticles dispersed in organic solvent to an aqueous solution via oxidation of the oleic acid ligand. Nanoparticles were then functionalized with single strand DNA oligomers (ssDNA by inducing covalent bonds between surface carboxylic groups and a 5' amine modified-ssDNA. Hybridization with the 5' fluorophore (Cy5 modified complementary ssDNA strand demonstrated the specificity of binding and allowed the fine control over the distance between Eu3+ ions doped nanoparticle and the fluorophore by varying the number of the dsDNA base pairs. First, our results confirmed nonradiative resonance energy transfer and demonstrate the dependence of its efficiency on the distance between the donor (Eu3+ and the acceptor (Cy5 with sensitivity at a nanometre scale.

  13. DNA base pair resolution measurements using resonance energy transfer efficiency in lanthanide doped nanoparticles.

    Science.gov (United States)

    Delplanque, Aleksandra; Wawrzynczyk, Dominika; Jaworski, Pawel; Matczyszyn, Katarzyna; Pawlik, Krzysztof; Buckle, Malcolm; Nyk, Marcin; Nogues, Claude; Samoc, Marek

    2015-01-01

    Lanthanide-doped nanoparticles are of considerable interest for biodetection and bioimaging techniques thanks to their unique chemical and optical properties. As a sensitive luminescence material, they can be used as (bio) probes in Förster Resonance Energy Transfer (FRET) where trivalent lanthanide ions (La3+) act as energy donors. In this paper we present an efficient method to transfer ultrasmall (ca. 8 nm) NaYF4 nanoparticles dispersed in organic solvent to an aqueous solution via oxidation of the oleic acid ligand. Nanoparticles were then functionalized with single strand DNA oligomers (ssDNA) by inducing covalent bonds between surface carboxylic groups and a 5' amine modified-ssDNA. Hybridization with the 5' fluorophore (Cy5) modified complementary ssDNA strand demonstrated the specificity of binding and allowed the fine control over the distance between Eu3+ ions doped nanoparticle and the fluorophore by varying the number of the dsDNA base pairs. First, our results confirmed nonradiative resonance energy transfer and demonstrate the dependence of its efficiency on the distance between the donor (Eu3+) and the acceptor (Cy5) with sensitivity at a nanometre scale.

  14. Preparation of new composite ceramics based on gadolinium-doped ceria and magnesia nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Yao, Jingying; Schelter, Matthias; Zosel, Jens; Oelssner, Wolfram [Kurt-Schwabe-Institut fuer Mess- und Sensortechnik e.V. Meinsberg, Waldheim (Germany); Mertig, Michael [Kurt-Schwabe-Institut fuer Mess- und Sensortechnik e.V. Meinsberg, Waldheim (Germany); Physikalische Chemie, Mess- und Sensortechnik, Technische Universitaet Dresden (Germany)

    2017-09-15

    To achieve solid electrolyte materials for electrochemical energy storage devices with very high oxygen ion conductivity, composites of gadolinium-doped ceria (GDC) and magnesia (MgO) are developed in this study. Three different preparation methods are used to prepare nanoparticles from these two components. According to the characterization results, the self-propagating high-temperature synthesis is best suited for the preparation of both nanometer-sized GDC powder as solid electrolyte and MgO powder as insulator. The structures of the prepared nanometer-sized powders have been characterized by X-ray diffraction and transmission electron microscopy. They show narrow size distributions in the lower nanometer range. Then, dense composite ceramics are prepared from a MgO-GDC mixture by sintering. The size of the crystallite domains in the sintered ceramic is in the upper nanometer range. TEM and TEM-EDX images of a new composite ceramic based on gadolinium-doped ceria and magnesia nanoparticles. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Preparation of new composite ceramics based on gadolinium-doped ceria and magnesia nanoparticles

    International Nuclear Information System (INIS)

    Yao, Jingying; Schelter, Matthias; Zosel, Jens; Oelssner, Wolfram; Mertig, Michael

    2017-01-01

    To achieve solid electrolyte materials for electrochemical energy storage devices with very high oxygen ion conductivity, composites of gadolinium-doped ceria (GDC) and magnesia (MgO) are developed in this study. Three different preparation methods are used to prepare nanoparticles from these two components. According to the characterization results, the self-propagating high-temperature synthesis is best suited for the preparation of both nanometer-sized GDC powder as solid electrolyte and MgO powder as insulator. The structures of the prepared nanometer-sized powders have been characterized by X-ray diffraction and transmission electron microscopy. They show narrow size distributions in the lower nanometer range. Then, dense composite ceramics are prepared from a MgO-GDC mixture by sintering. The size of the crystallite domains in the sintered ceramic is in the upper nanometer range. TEM and TEM-EDX images of a new composite ceramic based on gadolinium-doped ceria and magnesia nanoparticles. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. All fiber passively mode locked zirconium-based erbium-doped fiber laser

    Science.gov (United States)

    Ahmad, H.; Awang, N. A.; Paul, M. C.; Pal, M.; Latif, A. A.; Harun, S. W.

    2012-04-01

    All passively mode locked erbium-doped fiber laser with a zirconium host is demonstrated. The fiber laser utilizes the Non-Linear Polarization Rotation (NPR) technique with an inexpensive fiber-based Polarization Beam Splitter (PBS) as the mode-locking element. A 2 m crystalline Zirconia-Yttria-Alumino-silicate fiber doped with erbium ions (Zr-Y-Al-EDF) acts as the gain medium and generates an Amplified Spontaneous Emission (ASE) spectrum from 1500 nm to 1650 nm. The generated mode-locked pulses have a spectrum ranging from 1548 nm to more than 1605 nm, as well as a 3-dB bandwidth of 12 nm. The mode-locked pulse train has an average output power level of 17 mW with a calculated peak power of 1.24 kW and energy per pulse of approximately 730 pJ. The spectrum also exhibits a Signal-to-Noise Ratio (SNR) of 50 dB as well as a repetition rate of 23.2 MHz. The system is very stable and shows little power fluctuation, in addition to being repeatable.

  17. Electrochemical Biosensor Based on Boron-Doped Diamond Electrodes with Modified Surfaces

    Directory of Open Access Journals (Sweden)

    Yuan Yu

    2012-01-01

    Full Text Available Boron-doped diamond (BDD thin films, as one kind of electrode materials, are superior to conventional carbon-based materials including carbon paste, porous carbon, glassy carbon (GC, carbon nanotubes in terms of high stability, wide potential window, low background current, and good biocompatibility. Electrochemical biosensor based on BDD electrodes have attracted extensive interests due to the superior properties of BDD electrodes and the merits of biosensors, such as specificity, sensitivity, and fast response. Electrochemical reactions perform at the interface between electrolyte solutions and the electrodes surfaces, so the surface structures and properties of the BDD electrodes are important for electrochemical detection. In this paper, the recent advances of BDD electrodes with different surfaces including nanostructured surface and chemically modified surface, for the construction of various electrochemical biosensors, were described.

  18. Oxygen reduction activity of N-doped carbon-based films prepared by pulsed laser deposition

    Science.gov (United States)

    Hakoda, Teruyuki; Yamamoto, Shunya; Kawaguchi, Kazuhiro; Yamaki, Tetsuya; Kobayashi, Tomohiro; Yoshikawa, Masahito

    2010-12-01

    Carbon-based films with nitrogen species on their surface were prepared on a glassy carbon (GC) substrate for application as a non-platinum cathode catalyst for polymer electrolyte fuel cells. Cobalt and carbon were deposited in the presence of N 2 gas using a pulsed laser deposition method and then the metal Co was removed by HCl-washing treatment. Oxygen reduction reaction (ORR) activity was electrochemically determined using a rotating disk electrode system in which the film samples on the GC substrate were replaceable. The ORR activity increased with the temperature of the GC substrate during deposition. A carbon-based film prepared at 600 °C in the presence of N 2 at 66.7 Pa showed the highest ORR activity among the tested samples (0.66 V vs. NHE). This film was composed of amorphous carbons doped with pyridine type nitrogen atoms on its surface.

  19. Rapid enhancement of nodal quasiparticle mass with heavily underdoping in Bi2212

    Science.gov (United States)

    Anzai, Hiroaki; Arita, Masashi; Namatame, Hirofumi; Taniguchi, Masaki; Ishikado, Motoyuki; Fujita, Kazuhiro; Ishida, Shigeyuki; Uchida, Shin-ichi; Ino, Akihiro

    2018-05-01

    We report substantial advance of our low-energy angle-resolved photoemission study of nodal quasiparticles in Bi2Sr2CaCu2O8+δ. The new data cover the samples from underdoped down to heavily underdoped levels. We also present the nodal Fermi velocities that determined by using an excitation-photon energy of hν = 7.0 eV over a wide doping range. The consistency between the results with hν = 8.1 and 7.0 eV allows us to rule out the effect of photoemission matrix elements. In comparison with the data previously reported, the nodal effective mass increases by a factor of ∼ 1.5 in going from optimally doped to heavily underdoped levels. We find a rapid enhancement of the nodal quasiparticle mass at low doping levels near the superconductor-to-insulator transition. The effective coupling spectrum, λ (ω) , is extracted directly from the energy derivatives of the quasiparticle dispersion and scattering rate, as a causal function of the mass enhancement factor. A steplike increase in Reλ (ω) around ∼ 65 meV is demonstrated clearly by the Kramers-Kronig transform of Imλ (ω) . To extract the low-energy renormalization effect, we calculated a simple model for the electron-boson interaction. This model reveals that the contribution of the renormalization at | ω | ≤ 15 meV to the quasiparticle mass is larger than that around 65 meV in underdoped samples.

  20. Challenges and threats to implementing the fight against doping in sport.

    Science.gov (United States)

    Dvorak, Jiri; Saugy, Martial; Pitsiladis, Yannis P

    2014-05-01

    Prominent doping cases in certain sports have recently raised public awareness of doping and reinforced the perception that doping is widespread. Efforts to deal with doping in sport have intensified in recent years, yet the general public believes that the 'cheaters' are ahead of the testers. Therefore, there is an urgent need to change the antidoping strategy. For example, the increase in the number of individual drug tests conducted between 2005 and 2012 was approximately 90 000 and equivalent to an increase of about 50%, yet the number of adverse analytical findings remained broadly the same. There is also a strikingly different prevalence of doping substances and methods in sports such as a 0.03% prevalence of anabolic steroids in football compared to 0.4% in the overall WADA statistics. Future efforts in the fight against doping should therefore be more heavily based on preventative strategies such as education and on the analysis of data and forensic intelligence and also on the experiences of relevant stakeholders such as the national antidoping organisations, the laboratories, athletes or team physicians and related biomedical support staff. This strategy is essential to instigate the change needed to more effectively fight doping in sport.

  1. Influences of Mg Doping on the Electrochemical Performance of TiO2 Nanodots Based Biosensor Electrodes

    Directory of Open Access Journals (Sweden)

    M. S. H. Al-Furjan

    2014-01-01

    Full Text Available Electrochemical biosensors are essential for health monitors to help in diagnosis and detection of diseases. Enzyme adsorptions on biosensor electrodes and direct electron transfer between them have been recognized as key factors to affect biosensor performance. TiO2 has a good protein adsorption ability and facilitates having more enzyme adsorption and better electron transfer. In this work, Mg ions are introduced into TiO2 nanodots in order to further improve electrode performance because Mg ions are considered to have good affinity with proteins or enzymes. Mg doped TiO2 nanodots on Ti substrates were prepared by spin-coating and calcining. The effects of Mg doping on the nanodots morphology and performance of the electrodes were investigated. The density and size of TiO2 nanodots were obviously changed with Mg doping. The sensitivity of 2% Mg doped TiO2 nanodots based biosensor electrode increased to 1377.64 from 897.8 µA mM−1 cm−2 and its KMapp decreases to 0.83 from 1.27 mM, implying that the enzyme achieves higher catalytic efficiency due to better affinity of the enzyme with the Mg doped TiO2. The present work could provide an alternative to improve biosensor performances.

  2. Insight into destabilization mechanism of Mg-based hydrides interstitially co-doped with nonmetals: a DFT study

    Science.gov (United States)

    Wu, Zhen; Zhu, Luying; Yang, Fusheng; Zhang, Zaoxiao; Nyamsi, Serge N.

    2018-04-01

    Mg-based metal hydride is one of the most promising materials for hydrogen energy storage. However, the high thermal stability due to strong bonding effects between the atoms limits its practical application. In order to reduce the thermal stability, a method of doping double nonmetals into Mg-based system was proposed in this study. The density functional theory (DFT) calculation results showed that the thermal stabilities of both the B-N co-doped Mg-based alloy and its hydride are reduced compared with pure Mg-based system. The relative formation enthalpies of the alloy and its hydride are 0.323 and 0.595 eV atom-1, respectively. The values are much higher than those for either singly B- or N-doped Mg-based system. The more significant destabilization by doping double nonmetal elements than single element is mainly attributed to a dual effect in weakening Mg-Ni/NiH4 bonds, caused by criss-cross interactions between B-Ni and N-Mg bonds.

  3. Gene doping.

    Science.gov (United States)

    Haisma, H J; de Hon, O

    2006-04-01

    Together with the rapidly increasing knowledge on genetic therapies as a promising new branch of regular medicine, the issue has arisen whether these techniques might be abused in the field of sports. Previous experiences have shown that drugs that are still in the experimental phases of research may find their way into the athletic world. Both the World Anti-Doping Agency (WADA) and the International Olympic Committee (IOC) have expressed concerns about this possibility. As a result, the method of gene doping has been included in the list of prohibited classes of substances and prohibited methods. This review addresses the possible ways in which knowledge gained in the field of genetic therapies may be misused in elite sports. Many genes are readily available which may potentially have an effect on athletic performance. The sporting world will eventually be faced with the phenomena of gene doping to improve athletic performance. A combination of developing detection methods based on gene arrays or proteomics and a clear education program on the associated risks seems to be the most promising preventive method to counteract the possible application of gene doping.

  4. Effect of Mg-doping on the degradation of LiNiO2-based cathode materials by combined spectroscopic methods

    OpenAIRE

    Muto, Shunsuke; Tatsumi, Kazuyoshi; Kojima, Yuji; Oka, Hideaki; Kondo, Hiroki; Horibuchi, Kayo; Ukyo, Yoshio

    2012-01-01

    The performance of a LiNiO2-based cell has been shown to be significantly improved by Mg-doping of LiNi0.8Co0.15Al0.05O2 (Mg-doped NCA) cathode materials. In the present study, the effects of Mg-doping were examined by electrochemical impedance spectroscopy (EIS) and scanning transmission electron microscopy-electron energy loss spectroscopy. EIS analysis revealed that the activation energy of Mg-doped NCA for the charge-transfer reaction was larger than that of undoped NCA by a factor of ∼10...

  5. Application of response surface methodology for the implementation, optimization and characterization of a new radiation sensor based on commercial glass doped with copper

    International Nuclear Information System (INIS)

    Mezzi, Ines

    2012-01-01

    In order to realize a dosimeter based on a silica glass doped with copper and detecting low doses, we used the method of ion exchange and studied the influence of various parameters of doping: the percentage of CuSO4, temperature and heating time in the oven. Our results showed that the doped glass can be used as a dosimeter for gamma radiation in the range of doses of 1 Gy to 100kGy. To optimize the experimental conditions of doping the glass with copper, we used a central composite design (CCD).

  6. Palladium on Nitrogen-Doped Mesoporous Carbon: A Bifunctional Catalyst for Formate-Based, Carbon-Neutral Hydrogen Storage.

    Science.gov (United States)

    Wang, Fanan; Xu, Jinming; Shao, Xianzhao; Su, Xiong; Huang, Yanqiang; Zhang, Tao

    2016-02-08

    The lack of safe, efficient, and economical hydrogen storage technologies is a hindrance to the realization of the hydrogen economy. Reported herein is a reversible formate-based carbon-neutral hydrogen storage system that is established over a novel catalyst comprising palladium nanoparticles supported on nitrogen-doped mesoporous carbon. The support was fabricated by a hard template method and nitridated under a flow of ammonia. Detailed analyses demonstrate that this bicarbonate/formate redox equilibrium is promoted by the cooperative role of the doped nitrogen functionalities and the well-dispersed, electron-enriched palladium nanoparticles. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Scintillation properties and X-ray irradiation hardness of Ce3+-doped Gd2O3-based scintillation glass

    International Nuclear Information System (INIS)

    Liu, Liwan; Shao, Chongyun; Zhang, Yu; Liao, Xili; Yang, Qiuhong; Hu, Lili; Chen, Danping

    2016-01-01

    Ce 3+ -doped Gd 2 O 3 -based scintillation glasses are prepared within an air or CO atmosphere. The effects of fluorine, lutetium, barium, and the melting atmosphere on the optical properties, scintillation properties and irradiation hardness are studied. Absorption spectra, luminescence spectra under UV and X-ray excitation, and the X-ray radiation-induced spectra are presented. The results show that the density can be increased by doping with fluorine, lutetium and barium. The luminescence intensity decreases after X-ray irradiation. Because of charge transfer quenching, fluorine and lutetium enhance the UV-excited and X-ray excited luminescence intensity, but barium decreases. Moreover, fluorine and lutetium are advantageous to irradiation hardness while barium is not. In addition, a non-reducing atmosphere provides a higher irradiation hardness than a reducing atmosphere. Fluorine-doped glass is promising to enhance luminescence intensity, promote irradiation hardness, and increase the density.

  8. Ultrasensitive ppb-level NO2 gas sensor based on WO3 hollow nanosphers doped with Fe

    Science.gov (United States)

    Zhang, Ziyue; haq, Mahmood; Wen, Zhen; Ye, Zhizhen; Zhu, Liping

    2018-03-01

    WO3 mesoporous hollow nanospheres doped with Fe synthesized by a facile method have mesoporous hollow nanospherical like morphology, small grain size (10 nm), high crystalline quality and ultrahigh surface area (165 m2/g). XRD spectra and Raman spectra indicate the Fe doping leading to the smaller cell parameters as compared to pure WO3, and the slight distortion in the crystal lattice produces a number of defects, making it a better candidate for gas sensing. XPS analysis shows that Fe-doped WO3 mesoporous hollow nanospheres have more oxygen vacancies than pure WO3, which is beneficial to the adsorption of oxygen and NO2 and its surface reaction. The gas sensor based on Fe-WO3 exhibited excellent low ppb-level (10 ppb) NO2 detecting performance and outstanding selectivity.

  9. Characterization of a gamma radiation dosimeter based of glass doped with copper

    International Nuclear Information System (INIS)

    Laameri, Mohamed Hadi; Ben Mansour, Issam

    2010-01-01

    Commercial sodo-calcic silicate glass was studied by thermo luminescence in order to evaluate its potential like material sensitive to the gamma radiation for dosimetric application. We have examined in particular the effect of doping glass copper ion exchange C U-N A for different concentrations technique and multiple conditions of doping on luminescent thermo sensitivity on a very wide range of doses ranging from 10 mGy up to 100 kGy. We have also tried to explain the origin of thermoluminescence observed by exploiting the doped and non-doped samples EPR spectra.

  10. Screening in veterinary drug analysis and sports doping control based on full-scan, accurate-mass spectrometry

    NARCIS (Netherlands)

    Peters, R.J.B.; Stolker, A.A.M.; Mol, J.G.J.; Lommen, A.; Lyris, E.; Angelis, Y.S.; Vonaparti, A.; Stamou, M.; Georgakopoulos, C.G.; Nielen, M.W.F.

    2010-01-01

    A common trend in food contaminants and sports doping control is towards a limited number of targeted, full-scan, accurate-mass spectrometry (MS) methods based on time-of-flight (TOF) or Fourier-transform orbital trap (Orbitrap) mass analyzers. Retrospective analysis of the full-scan datasets of

  11. High power, ultra-broadband supercontinuum source based on highly GeO2 doped silica fiber

    DEFF Research Database (Denmark)

    Jain, Deepak; Sidharthan, Raghuraman; Moselund, Peter M.

    2017-01-01

    We demonstrate a 74 mol % GeO2 doped fiber for mid-infrared supercontinuum generation. Experiments ensure a highest output power for a broadest spectrum from 700nm to 3200nm from this fiber, while being pumped by a broadband 4 stage Erbium fiber based MOPA. The effect of repetition rate of pump...

  12. Characterization and technology of AlGaAs/GaAs phototransistor with double delta-doped base

    International Nuclear Information System (INIS)

    Radziewicz, D.; Sciana, B.; Pucicki, D.; Zborowska-Lindert, I.; Kovac, J.; Skriniarova, J.; Vincze, A.

    2011-01-01

    This work describes the fabrication and measurements of n-p-n AlGaAs/GaAs heterojunction phototransistor with double Zn-delta-doped 50 nm - thick GaAs base region. Parameters of the particular transistor epilayers were optimized by computer simulations using Silvaco Atlas program. (authors)

  13. Performance Degradation Tests of Phosphoric Acid Doped Polybenzimidazole Membrane Based High Temperature Polymer Electrolyte Membrane Fuel Cells

    DEFF Research Database (Denmark)

    Zhou, Fan; Araya, Samuel Simon; Grigoras, Ionela

    2015-01-01

    Degradation tests of two phosphoric acid (PA) doped PBI membrane based HT-PEM fuel cells were reported in this paper to investigate the effects of start/stop and the presence of methanol in the fuel to the performance degradation of the HT-PEM fuel cell. Continuous tests with pure dry H2 and meth...

  14. All-optical, thermo-optical path length modulation based on the vanadium-doped fibers.

    Science.gov (United States)

    Matjasec, Ziga; Campelj, Stanislav; Donlagic, Denis

    2013-05-20

    This paper presents an all-fiber, fully-optically controlled, optical-path length modulator based on highly absorbing optical fiber. The modulator utilizes a high-power 980 nm pump diode and a short section of vanadium-co-doped single mode fiber that is heated through absorption and a non-radiative relaxation process. The achievable path length modulation range primarily depends on the pump's power and the convective heat-transfer coefficient of the surrounding gas, while the time response primarily depends on the heated fiber's diameter. An absolute optical length change in excess of 500 µm and a time-constant as short as 11 ms, were demonstrated experimentally. The all-fiber design allows for an electrically-passive and remote operation of the modulator. The presented modulator could find use within various fiber-optics systems that require optical (remote) path length control or modulation.

  15. Catalyst Degradation in High Temperature Proton Exchange Membrane Fuel Cells Based on Acid Doped Polybenzimidazole Membranes

    DEFF Research Database (Denmark)

    Cleemann, Lars Nilausen; Buazar, F.; Li, Qingfeng

    2013-01-01

    and multi‐walled carbon nanotubes were used as supports for electrode catalysts and evaluated in accelerated durability tests under potential cycling at 150 °C. Measurements of open circuit voltage, area specific resistance and hydrogen permeation through the membrane were carried out, indicating little...... contribution of the membrane degradation to the performance losses during the potential cycling tests. As the major mechanism of the fuel cell performance degradation, the electrochemical active area of the cathodic catalysts showed a steady decrease in the cyclic voltammetric measurements, which was also......Degradation of carbon supported platinum catalysts is a major failure mode for the long term durability of high temperature proton exchange membrane fuel cells based on phosphoric acid doped polybenzimidazole membranes. With Vulcan carbon black as a reference, thermally treated carbon black...

  16. Chemical doping and improved flux pinning in Hg-based superconductors

    International Nuclear Information System (INIS)

    Kishio, K.; Shimoyama, J.; Yoshikawa, A.; Kitazawa, K.

    1996-01-01

    Chemical doping of a small amount (0.02∼0.3) of rhenium (Re) ion into HgBa 2 Ca n-1 Cu n O y (n=1∼4) has been studied. The flux pinning strength in these Hg-based superconductors is significantly enhanced compared to the undoped parent materials. Neutron diffraction analysis of representative samples (n=3) revealed that Re partially substitutes the Hg-site with octahedrally fully coordinated oxygen atoms, giving rise to the stabilization of Hg(Re)O layer and reduction of this blocking layer thickness. Associated with the expected hybridization of Re-5d and O-2p orbitals and possible metallization of the Hg(Re)O layer, the improved flux pinning behavior is considered to be caused by the decrease of the electromagnetic anisotropy and the enhanced interlayer superconducting coupling strength

  17. Novel online security system based on rare-earth-doped glass microbeads

    Science.gov (United States)

    Officer, Simon; Prabhu, G. R.; Pollard, Pat; Hunter, Catherine; Ross, Gary A.

    2004-06-01

    A novel fluorescent security label has been produced that could replace numerous conventional fluorescent dyes in document security. This label utilizes rare earth ions doped in a borosilicate glass matrix to produce sharp spectral fluorescence peaks with characteristic long lifetimes due to the rare earth ions. These are subsequently detected by an online detection system based on fluorescence and the long lifetimes to avoid any interference from other fluorophores present in the background. Security is further enhanced by the interaction of the rare earth ions with each other and the effect of the host on the emission spectra and therefore the number of permutations that could be produced. This creates a very secure label with various applications for the security market.

  18. Performance Degradation Tests of Phosphoric Acid Doped PBI Membrane Based High Temperature PEM Fuel Cells

    DEFF Research Database (Denmark)

    Zhou, Fan; Araya, Samuel Simon; Grigoras, Ionela

    2014-01-01

    Degradation tests of two phosphoric acid (PA) doped PBI membrane based HT-PEM fuel cells were reported in this paper to investigate the effects of start/stop and the presence of methanol in the fuel to the performance degradation. Continuous tests with H2 and simulated reformate which was composed...... of H2, water steam and methanol as the fuel were performed on both single cells. 12-h-startup/12-h-shutdown dynamic tests were performed on the first single cell with pure dry H2 as the fuel and on the second single cell with simulated reformate as the fuel. Along with the tests electrochemical...... techniques such as polarization curves and electrochemical impedance spectroscopy (EIS) were employed to study the degradation mechanisms of the fuel cells. Both single cells showed an increase in the performance in the H2 continuous tests, because of a decrease in the ORR kinetic resistance probably due...

  19. Sensitivity Enhancement of Biochemical Sensors Based on Er+3 Doped Microsphere Coupled to an External Mirror

    Directory of Open Access Journals (Sweden)

    Alireza BAHRAMPOUR

    2010-09-01

    Full Text Available In this paper we proposed an active optical sensor designed based on the Er+3-doped microsphere coupled to an external mirror. The microsphere-mirror coupling causes the degeneracy splitting of the resonance frequencies. Each of resonance frequencies splits in to two different resonance frequencies .The coupling coefficient changes as a result of altering the refractive index of surrounding medium. So, the presence of bio/chemical analytes can be detected by measuring the change of laser output power, laser frequency or the difference between frequencies of the red and blue shifted modes. In the presence of mirror at least one order of magnitude sensitivity enhancement is obtained relative to the active microsphere biochemical sensors.

  20. Flexible, all-organic ammonia sensor based on dodecylbenzene sulfonic acid-doped polyaniline films

    International Nuclear Information System (INIS)

    Rizzo, G.; Arena, A.; Donato, N.; Latino, M.; Saitta, G.; Bonavita, A.; Neri, G.

    2010-01-01

    A stable chlorobenzene dispersion of conducting polyaniline (PANI) has been obtained by doping emeraldine base with dodecylbenzene sulfonic acid (DBSA) and studied by spectrophotometric measurements in the UV-vis-IR range. The electrical properties of PANI: DBSA films obtained from the above dispersion have been investigated under different temperature and relative humidity conditions. All-organic chemoresistive devices have been developed by spin-coating the PANI: DBSA dispersion on flexible substrates, and then by depositing electrodes on the top, from a carbon nanotube conducting ink. Sensing tests performed under exposition to calibrated amounts of ammonia reveal that these simple and inexpensive sensors are able to detect ammonia at room temperature in a reliable way, with a sensitivity linearly related to concentration in the range between 5 ppm and 70 ppm.

  1. Homojunction p-n photodiodes based on As-doped single ZnO nanowire

    International Nuclear Information System (INIS)

    Cho, H. D.; Zakirov, A. S.; Yuldashev, Sh. U.; Kang, T. W.; Ahn, C. W.; Yeo, Y. K.

    2013-01-01

    Photovoltaic device was successfully grown solely based on the single ZnO p-n homojunction nanowire. The ZnO nanowire p-n diode consists of an as-grown n-type segment and an in-situ arsenic doped p-type segment. This p-n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased condition. Our results demonstrate that present ZnO p-n homojunction nanowire can be used as a self-powered ultraviolet photodetector as well as a photovoltaic cell, which can also be used as an ultralow electrical power source for nano-scale electronic, optoelectronic, and medical devices

  2. Remote Excavation of Heavily Contaminated UXO Sites. The Range Master

    National Research Council Canada - National Science Library

    Crandall, Alan L

    2007-01-01

    USA Environmental, Inc., and Timberline Environmental Services, Inc., developed the Range Master, a remote controlled scraper with an integrated power screen, to excavate and sift the top 12 inches of heavily contaminated UXO sites...

  3. Adaptive Neuro-Fuzzy Based Gain Controller for Erbium-Doped Fiber Amplifiers

    Directory of Open Access Journals (Sweden)

    YUCEL, M.

    2017-02-01

    Full Text Available Erbium-doped fiber amplifiers (EDFA must have a flat gain profile which is a very important parameter such as wavelength division multiplexing (WDM and dense WDM (DWDM applications for long-haul optical communication systems and networks. For this reason, it is crucial to hold a stable signal power per optical channel. For the purpose of overcoming performance decline of optical networks and long-haul optical systems, the gain of the EDFA must be controlled for it to be fixed at a high speed. In this study, due to the signal power attenuation in long-haul fiber optic communication systems and non-equal signal amplification in each channel, an automatic gain controller (AGC is designed based on the adaptive neuro-fuzzy inference system (ANFIS for EDFAs. The intelligent gain controller is implemented and the performance of this new electronic control method is demonstrated. The proposed ANFIS-based AGC-EDFA uses the experimental dataset to produce the ANFIS-based sets and the rule base. Laser diode currents are predicted within the accuracy rating over 98 percent with the proposed ANFIS-based system. Upon comparing ANFIS-based AGC-EDFA and experimental results, they were found to be very close and compatible.

  4. Enhanced n-Doping Efficiency of a Naphthalenediimide-Based Copolymer through Polar Side Chains for Organic Thermoelectrics

    KAUST Repository

    Kiefer, David

    2018-01-05

    N-doping of conjugated polymers either requires a high dopant fraction or yields a low electrical conductivity because of their poor compatibility with molecular dopants. We explore n-doping of the polar naphthalenediimide–bithiophene copolymer p(gNDI-gT2) that carries oligoethylene glycol-based side chains and show that the polymer displays superior miscibility with the benzimidazole–dimethylbenzenamine-based n-dopant N-DMBI. The good compatibility of p(gNDI-gT2) and N-DMBI results in a relatively high doping efficiency of 13% for n-dopants, which leads to a high electrical conductivity of more than 10–1 S cm–1 for a dopant concentration of only 10 mol % when measured in an inert atmosphere. We find that the doped polymer is able to maintain its electrical conductivity for about 20 min when exposed to air and recovers rapidly when returned to a nitrogen atmosphere. Overall, solution coprocessing of p(gNDI-gT2) and N-DMBI results in a larger thermoelectric power factor of up to 0.4 μW K–2 m–1 compared to other NDI-based polymers.

  5. Can We Better Integrate the Role of Anti-Doping in Sports and Society? A Psychological Approach to Contemporary Value-Based Prevention.

    Science.gov (United States)

    Petróczi, Andrea; Norman, Paul; Brueckner, Sebastian

    2017-01-01

    In sport, a wide array of substances with established or putative performance-enhancing properties is used. Most substances are fully acceptable, whilst a defined set, revised annually, is prohibited; thus, using any of these prohibited substances is declared as cheating. In the increasingly tolerant culture of pharmacological and technical human enhancements, the traditional normative approach to anti-doping, which involves telling athletes what they cannot do to improve their athletic ability and performance, diverges from the otherwise positive values attached to human improvement and enhancement in society. Today, doping is the epitome of conflicting normative expectations about the goal (performance enhancement) and the means by which the goal is achieved (use of drugs). Owing to this moral-functional duality, addressing motivations for doping avoidance at the community level is necessary, but not sufficient, for effective doping prevention. Relevant and meaningful anti-doping must also recognise and respect the values of those affected, and consolidate them with the values underpinning structural, community level anti-doping. Effective anti-doping efforts are pragmatic, positive, preventive, and proactive. They acknowledge the progressive nature of how a "performance mindset" forms in parallel with the career transition to elite level, encompasses all levels and abilities, and directly addresses the reasons behind doping use with tangible solutions. For genuine integration into sport and society, anti-doping should consistently engage athletes and other stakeholders in developing positive preventive strategies to ensure that anti-doping education not only focuses on the intrinsic values associated with the spirit of sport but also recognises the values attached to performance enhancement, addresses the pressures athletes are under, and meets their needs for practical solutions to avoid doping. Organisations involved in anti- doping should avoid the image of

  6. Nitrogen-doped carbon based on peptides of hair as electrode materials for surpercapacitors

    International Nuclear Information System (INIS)

    Guo, Zihan; Zhou, Qingwen; Wu, Zhaojun; Zhang, Zhiguo; Zhang, Wen; Zhang, Yao; Li, Lijun; Cao, Zhenzhu; Wang, Hong; Gao, Yanfang

    2013-01-01

    Highlights: • Hair was directly carbonized by environmental and energy-saving methods. • Hair was utilized to prepare nitrogen-doped carbon materials for supercapacitor. • A new approache for preparing nitrogen-rich active carbon from biomass waste of hair-like precursor. • Hair-based carbon having a non-crystalline layered structure and excellent capacitive performance. -- Abstract: Hair, a high-nitrogen energetic material, is utilized as a precursor for nitrogen-doped porous carbon. The preparation procedures for obtaining carbon from hair are very simple, namely, reductant or deionized water activation process followed by hair carbonization under argon atmosphere at 800 °C for 2 h. The samples are characterized through scanning electron microscopy, transmission electron microscopy, X-ray diffraction, nitrogen adsorption, and X-ray photoelectron microscopy. The carbon samples are tested as electrode materials in supercapacitors in a three-electrode system. The carbon (soaked in deionized water at 80 °C) presents relatively low specific surface areas (441.34 m 2 g −1 ) and shows higher capacitance (154.5 F g −1 ) compared with nitrogen-free commercial activated carbons (134.5 F g −1 ) at 5 A g −1 . The capacitance remains at 130.5 F g −1 even when the current load is increased to 15 A g −1 . The capacitance loss is only 5% in 6 M KOH after 10,000 charge and discharge cycles at 5 A g −1 . It is the unique microstructure after activation processing and electroactive nitrogen functionalities that enable the carbon obtained through a simple, ecological, and economical process to be utilized as a potential electrode material for electrical double-layer capacitors

  7. New Er{sup 3+} doped antimony oxide based glasses: Thermal analysis, structural and spectral properties

    Energy Technology Data Exchange (ETDEWEB)

    Ouannes, K. [Faculté des Sciences et de la Technologie, Université de Biskra, BP 145 RP, 07000, Biskra (Algeria); Lebbou, K., E-mail: kheirreddine.lebbou@univ-lyon1.fr [Institut Lumière Matière, UMR5306 Université Lyon 1-CNRS, Université de Lyon, 69622, Villeurbanne (France); Walsh, Brian-M. [NASA Langley Research Center, Hampton, VA, 23681 (United States); Poulain, M. [UMR 6226- Verres et Céramiques – Campus de Beaulieu, Université de Rennes1, 35042, Rennes (France); Alombert-Goget, G.; Guyot, Y. [Institut Lumière Matière, UMR5306 Université Lyon 1-CNRS, Université de Lyon, 69622, Villeurbanne (France)

    2015-11-15

    The novel oxide glass compositions based on Sb{sub 2}O{sub 3} are elaborated and characterized, in the system (90-X)Sb{sub 2}O{sub 3}–10Na{sub 2}O–XBi{sub 2}O{sub 3} (SNB). We are interested in bismuth rates incorporated into the glass, its effect on the different physical properties that have been measured, and especially, in radiative and spectroscopic properties of erbium doped SNB glasses. Differential scanning calorimeter (DSC) measurements show an improvement of the stability factor,ΔT, of the glasses, which can indicate a reinforcement of the network. Both FTIR and Raman spectra have also been considered in terms of bismuth influence. As a function of composition, we have principally measured optical absorption, visible and infrared emission, and lifetime. The Judd–Ofelt parameters measured from the absorption spectra have been used to calculate the radiative lifetime (τ{sub r}) and the stimulated emission cross section. The spectroscopic quality factor χ = Ω{sub 4}/Ω{sub 6} = 0.73, low phonon energy of ∼600–700 cm{sup −1}, a reduced quenching effect, and a high quantum efficiency of 90% for the 1.53 μm measured emission, by pumping at 980 nm, are in favor of promising laser applications. - Highlights: • Glass belonging to Er-doped Sb{sub 2}O{sub 3}–Na{sub 2}O–Bi{sub 2}O{sub 3} (SNB) system are elaborated and characterized. • The intensity parameters Ωt were obtained via the Judd–Ofelt theory. • The optical properties were studied as a function of glass composition.

  8. Nitrogen-doped graphene quantum dots-based fluorescence molecularly imprinted sensor for thiacloprid detection.

    Science.gov (United States)

    Liu, Yang; Cao, Nan; Gui, Wenying; Ma, Qiang

    2018-06-01

    In this paper, a test strip-based sensor was developed for thiacloprid quantitative detection based on PDA molecularly imprinted polymer (MIP) and nitrogen-doped graphene quantum dots (N-GQDs). Thiacloprid is a new type of nicotine insecticide, which can block the normal neurotransmitter delivery process in insects. In the sensing system, N-GQDs were immersed into filter paper at first. Then, dopamine (DA) with thiacloprid can be self-polymerized on test strip surface to form the uniform PDA film. After removed thiacloprid template, the established poly dopamine (PDA) MIP can selectively recognize thiacloprid. As a result, captured thiacloprid can enhance the fluorescence intensity of N-GQDs into the test strip. As a result, the fluorescence intensity of N-GQDs can be linearly related within a certain range of thiacloprid concentration. Under the optimum conditions, the proposed sensor for thiacloprid detection exhibited a linear ranging from 0.1 mg/L to 10 mg/L with a low detection limit of 0.03 mg/L. The N-GQDs based test strip-based sensor for thiaclopridis reported for the first time. The sensing system has high selectivity to thiacloprid and provides new opportunities in the pesticide detection. Copyright © 2018 Elsevier B.V. All rights reserved.

  9. Insight about electrical properties of low-temperature solution-processed Al-doped ZnO nanoparticle based layers for TFT applications

    Energy Technology Data Exchange (ETDEWEB)

    Diallo, Abdou Karim; Gaceur, Meriem; Fall, Sadiara; Didane, Yahia; Ben Dkhil, Sadok; Margeat, Olivier, E-mail: margeat@cinam.univ-mrs.fr; Ackermann, Jörg; Videlot-Ackermann, Christine, E-mail: videlot@cinam.univ-mrs.fr

    2016-12-15

    Highlights: • Al-doped ZnO (AZO) nanoparticles. • Impact of dispersion state and solid state on electrical properties. • Extrinsic doping with Al for high conducting AZO nanoparticle based layers. • Low-temperature operating nanoparticulate AZO TFTs. - Abstract: Aluminium-doped zinc oxide nanoparticles (NPs) with controlled Al doping contents (AZO{sub x} with x = 0–0.8 at% of Al) were explored as new oxide semiconductor materials to study the impact of doping on both solution and solid states. Polycrystalline AZO{sub x} thin films were produced by spin-coating the dispersions following by a thermal post-treatment at low-temperature (80 °C or 150 °C). The coated AZO{sub x} films were employed as active layer in thin-film transistors. Morphology and microstructure were studied by scanning electron microscopy and X-ray diffraction. The impact on the device performances (mobility, conductivity, charge carrier density) of Al-doping content together with the solution state was examined. Spin-coated films delivered an electron mobility up to 3 × 10{sup −2} cm{sup 2}/Vs for the highest Al-doping ratio AZO{sub 0.8}. Despite highly different morphologies, extrinsic doping with aluminium significantly increases the conductivity of low temperature solution-processed AZO{sub x} NPs series based layers by several orders of magnitude from AZO{sub 0} to AZO{sub 0.8}.

  10. Reduced-graphene-oxide supported tantalum-based electrocatalysts: Controlled nitrogen doping and oxygen reduction reaction

    Science.gov (United States)

    Yang, Xiaoyun; Mo, Qijie; Guo, Yulin; Chen, Nana; Gao, Qingsheng

    2018-03-01

    Controlled N-doping is feasible to engineer the surface stoichiometry and the electronic configuration of metal-oxide electrocatalysts toward efficient oxygen reduction reactions (ORR). Taking reduced graphene oxide supported tantalum-oxides (TaOx/RGO) for example, this work illustrated the controlled N-doping in both metal-oxides and carbon supports, and the contribution to the improved ORR activity. The active N-doped TaOx/RGO electrocatalysts were fabricated via SiO2-assisted pyrolysis, in which the amount and kind of N-doping were tailored toward efficient electrocatalysis. The optimal nanocomposites showed a quite positive half-wave potential (0.80 V vs. RHE), the excellent long-term stability, and the outstanding tolerance to methanol crossing. The improvement in ORR was reasonably attributed to the synergy between N-doped TaOx and N-doped RGO. Elucidating the importance of controlled N-doping for electrocatalysis, this work will open up new opportunities to explore noble-metal-free materials for renewable energy applications.

  11. Broad spectral response photodetector based on individual tin-doped CdS nanowire

    Directory of Open Access Journals (Sweden)

    Weichang Zhou

    2014-12-01

    Full Text Available High purity and tin-doped 1D CdS micro/nano-structures were synthesized by a convenient thermal evaporation method. SEM, EDS, XRD and TEM were used to examine the morphology, composition, phase structure and crystallinity of as-prepared samples. Raman spectrum was used to confirm tin doped into CdS effectively. The effect of impurity on the photoresponse properties of photodetectors made from these as-prepared pure and tin-doped CdS micro/nano-structures under excitation of light with different wavelength was investigated. Various photoconductive parameters such as responsivity, external quantum efficiency, response time and stability were analyzed to evaluate the advantage of doped nanowires and the feasibility for photodetector application. Comparison with pure CdS nanobelt, the tin-doped CdS nanowires response to broader spectral range while keep the excellect photoconductive parameters. Both trapped state induced by tin impurity and optical whispering gallery mode microcavity effect in the doped CdS nanowires contribute to the broader spectral response. The micro-photoluminescence was used to confirm the whispering gallery mode effect and deep trapped state in the doped CdS nanowires.

  12. PALLADIUM DOPED TIN OXIDE BASED HYDROGEN GAS SENSORS FOR SAFETY APPLICATIONS

    International Nuclear Information System (INIS)

    Kasthurirengan, S.; Behera, Upendra; Nadig, D. S.

    2010-01-01

    Hydrogen is considered to be a hazardous gas since it forms a flammable mixture between 4 to 75% by volume in air. Hence, the safety aspects of handling hydrogen are quite important. For this, ideally, highly selective, fast response, small size, hydrogen sensors are needed. Although sensors based on different technologies may be used, thin-film sensors based on palladium (Pd) are preferred due to their compactness and fast response. They detect hydrogen by monitoring the changes to the electrical, mechanical or optical properties of the films. We report the development of Pd-doped tin-oxide based gas sensors prepared on thin ceramic substrates with screen printed platinum (Pt) contacts and integrated nicrome wire heaters. The sensors are tested for their performances using hydrogen-nitrogen gas mixtures to a maximum of 4%H 2 in N 2 . The sensors detect hydrogen and their response times are less than a few seconds. Also, the sensor performance is not altered by the presence of helium in the test gas mixtures. By the above desired performance characteristics, field trials of these sensors have been undertaken. The paper presents the details of the sensor fabrication, electronic circuits, experimental setup for evaluation and the test results.

  13. Oxygen-doped zirconium nitride based transparent resistive random access memory devices fabricated by radio frequency sputtering method

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hee-Dong, E-mail: khd0708@sejong.ac.kr [Department of Electrical Engineering, Sejong University, Neungdong-ro 209, Gwangjin-gu, Seoul 143-747 (Korea, Republic of); Yun, Min Ju [Department of Electrical Engineering, Sejong University, Neungdong-ro 209, Gwangjin-gu, Seoul 143-747 (Korea, Republic of); Kim, Kyeong Heon [School of Electrical Engineering, Korea University, Anam-dong, Sungbuk-gu, Seoul 163-701 (Korea, Republic of); Kim, Sungho, E-mail: sungho85.kim@sejong.ac.kr [Department of Electrical Engineering, Sejong University, Neungdong-ro 209, Gwangjin-gu, Seoul 143-747 (Korea, Republic of)

    2016-08-05

    In this work, we present a feasibility of bipolar resistive switching (RS) characteristics for Oxygen-doped zirconium nitride (O-doped ZrN{sub x}) films, produced by sputtering method, which shows a high optical transmittance of approximately 78% in the visible region as well as near ultra-violet region. In addition, in a RS test, the device has a large current ratio of 5 × 10{sup 3} in positive bias region and 5 × 10{sup 5} in negative bias region. Then, to evaluate an ability of data storage for the proposed memory devices, we measured a retention time for 10{sup 4} s at room temperature (RT) and 85 °C as well. As a result, the set and reset states were stably maintained with a current ratio of ∼10{sup 2} at 85 °C to ∼10{sup 3} at RT. This result means that the transparent memory by controlling the working pressure during sputtering process to deposit the ZrN{sub x} films could be a milestone for future see-through electronic devices. - Highlights: • The resistive switching characteristics of the transparent O-doped ZrN{sub x}-based RRAM cells have investigated. • Oxygen doping concentration within ZrN{sub x} is optimized using working pressure of sputter. • Long retention time were observed.

  14. Oxygen-doped zirconium nitride based transparent resistive random access memory devices fabricated by radio frequency sputtering method

    International Nuclear Information System (INIS)

    Kim, Hee-Dong; Yun, Min Ju; Kim, Kyeong Heon; Kim, Sungho

    2016-01-01

    In this work, we present a feasibility of bipolar resistive switching (RS) characteristics for Oxygen-doped zirconium nitride (O-doped ZrN_x) films, produced by sputtering method, which shows a high optical transmittance of approximately 78% in the visible region as well as near ultra-violet region. In addition, in a RS test, the device has a large current ratio of 5 × 10"3 in positive bias region and 5 × 10"5 in negative bias region. Then, to evaluate an ability of data storage for the proposed memory devices, we measured a retention time for 10"4 s at room temperature (RT) and 85 °C as well. As a result, the set and reset states were stably maintained with a current ratio of ∼10"2 at 85 °C to ∼10"3 at RT. This result means that the transparent memory by controlling the working pressure during sputtering process to deposit the ZrN_x films could be a milestone for future see-through electronic devices. - Highlights: • The resistive switching characteristics of the transparent O-doped ZrN_x-based RRAM cells have investigated. • Oxygen doping concentration within ZrN_x is optimized using working pressure of sputter. • Long retention time were observed.

  15. Effect of cerium oxide doping on the performance of CaO-based sorbents during calcium looping cycles.

    Science.gov (United States)

    Wang, Shengping; Fan, Shasha; Fan, Lijing; Zhao, Yujun; Ma, Xinbin

    2015-04-21

    A series of CaO-based sorbents were synthesized through a sol-gel method and doped with different amounts of CeO2. The sorbent with a Ca/Ce molar ratio of 15:1 showed an excellent absorption capacity (0.59 gCO2/g sorbent) and a remarkable cycle durability (up to 18 cycles). The admirable capture performance of CaCe-15 was ascribed to its special morphology formed by the doping of CeO2 and the well-distributed CeO2 particles. The sorbents doped with CeO2 possessed a loose shell-connected cross-linking structure, which was beneficial for the contact between CaO and CO2. CaO and CeO2 were dispersed homogeneously, and the existence of CeO2 also decreased the grain size of CaO. The well-dispersed CeO2, which could act as a barrier, effectively prevented the CaO crystallite from growing and sintering, thus the sorbent exhibited outstanding stability. The doping of CeO2 also improved the carbonation rate of the sorbent, resulting in a high capacity in a short period of time.

  16. Synthesis and Characterization of Highly Sensitive Hydrogen (H2 Sensing Device Based on Ag Doped SnO2 Nanospheres

    Directory of Open Access Journals (Sweden)

    Zhaorui Lu

    2018-03-01

    Full Text Available In this paper, pure and Ag-doped SnO2 nanospheres were synthesized by hydrothermal method and characterized via X-ray powder diffraction (XRD, field emission scanning electron microscopy (FESEM, energy dispersive spectroscopy (EDS, and X-ray photoelectron spectra (XPS, respectively. The gas sensing performance of the pure, 1 at.%, 3 at.%, and 5 at.% Ag-doped SnO2 sensing devices toward hydrogen (H2 were systematically evaluated. The results indicated that compared with pure SnO2 nanospheres, Ag-doped SnO2 nanospheres could not only decrease the optimum working temperature but also significantly improve H2 sensing such as higher gas response and faster response-recovery. Among all the samples, the 3 at.% Ag-doped SnO2 showed the highest response 39 to 100 μL/L H2 at 300 °C. Moreover, its gas sensing mechanism was discussed, and the results will provide reference and theoretical guidance for the development of high-performance SnO2-based H2 sensing devices.

  17. Effects of B site doping on electronic structures of InNbO4 based on hybrid density functional calculations

    Science.gov (United States)

    Lu, M. F.; Zhou, C. P.; Li, Q. Q.; Zhang, C. L.; Shi, H. F.

    2018-01-01

    In order to improve the photocatalytic activity under visible-light irradiation, we adopted first principle calculations based on density functional theory (DFT) to calculate the electronic structures of B site transition metal element doped InNbO4. The results indicated that the complete hybridization of Nb 4d states and some Ti 3d states contributed to the new conduction band of Ti doped InNbO4, barely changing the position of band edge. For Cr doping, some localized Cr 3d states were introduced into the band gap. Nonetheless, the potential of localized levels was too positive to cause visible-light reaction. When it came to Cu doping, the band gap was almost same with that of InNbO4 as well as some localized Cu 3d states appeared above the top of VB. The introduction of localized energy levels benefited electrons to migrate from valence band (VB) to conduction band (CB) by absorbing lower energy photons, realizing visible-light response.

  18. High performance supercapacitors based on highly conductive nitrogen-doped graphene sheets.

    Science.gov (United States)

    Qiu, Yongcai; Zhang, Xinfeng; Yang, Shihe

    2011-07-21

    Thermal nitridation of reduced graphene oxide sheets yields highly conductive (∼1000-3000 S m(-1)) N-doped graphene sheets, as a result of the restoration of the graphene network by the formation of C-N bonded groups and N-doping. Even without carbon additives, supercapacitors made of the N-doped graphene electrodes can deliver remarkable energy and power when operated at higher voltages, in the range of 0-4 V. This journal is © the Owner Societies 2011

  19. Effects of reduction temperature on the optoelectronic properties of diodes based on n-type Si and reduced graphene oxide doped with a conductive polymer

    International Nuclear Information System (INIS)

    Zeng, Jian-Jhou; Lin, Yow-Jon; Ruan, Cheng-He; Lin, Jian-Huang

    2013-01-01

    The effect of reduction temperature on the optoelectronic properties of diodes based on n-type Si and reduced graphene oxide (RGO) doped with a conductive polymer [poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS)] was examined in this study. It is found that conductivity of RGO-doped PEDOT:PSS films increases with increasing reduction temperature of graphene oxide (GO) sheets. The improvement of electrical conductivity is considered to mainly come from the carrier mobility enhancement. In addition, the ideality factor of n-type Si/RGO-doped PEDOT:PSS diodes decreases with increasing reduction temperature of GO sheets. The device-performance improvement originates from high-mobility hole transport combined with long-lifetime electron trapping in the RGO-doped PEDOT:PSS film. In addition, note that a suitable reduction temperature is an important issue for improving the device performance. (paper)

  20. First-principles study of antimony doping effects on the iron-based superconductor CaFe(SbxAs1−x)2

    International Nuclear Information System (INIS)

    Nagai, Yuki; Nakamura, Hiroki; Machida, Masahiko; Kuroki, Kazuhiko

    2015-01-01

    We study antimony doping effects on the iron-based superconductor CaFe(Sb x As 1−x ) 2 by using the first-principles calculation. The calculations reveal that the substitution of a doped antimony atom into As of the chainlike As layers is more stable than that into FeAs layers. This prediction can be checked by experiments. Our results suggest that doping homologous elements into the chainlike As layers, which only exist in the novel 112 system, is responsible for rising up the critical temperature. We discuss antimony doping effects on the electronic structure. It is found that the calculated band structures with and without the antimony doping are similar to each other within our framework. (author)

  1. First-Principles Study of Antimony Doping Effects on the Iron-Based Superconductor CaFe(SbxAs1-x)2

    Science.gov (United States)

    Nagai, Yuki; Nakamura, Hiroki; Machida, Masahiko; Kuroki, Kazuhiko

    2015-09-01

    We study antimony doping effects on the iron-based superconductor CaFe(SbxAs1-x)2 by using the first-principles calculation. The calculations reveal that the substitution of a doped antimony atom into As of the chainlike As layers is more stable than that into FeAs layers. This prediction can be checked by experiments. Our results suggest that doping homologous elements into the chainlike As layers, which only exist in the novel 112 system, is responsible for rising up the critical temperature. We discuss antimony doping effects on the electronic structure. It is found that the calculated band structures with and without the antimony doping are similar to each other within our framework.

  2. Highly sensitive room temperature ammonia gas sensor based on Ir-doped Pt porous ceramic electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Wenlong [College of pharmacy and biological engineering, Chengdu University, Chengdu, 610106 (China); Department of chemical and materials engineering, National Chin-Yi University of Technology, Taichung 411, Taiwan (China); Liu, Yen-Yu [Department of chemical and materials engineering, Tunghai University, Taichung 407, Taiwan (China); Do, Jing-Shan, E-mail: jsdo@ncut.edu.tw [Department of chemical and materials engineering, National Chin-Yi University of Technology, Taichung 411, Taiwan (China); Li, Jing, E-mail: lijing@cdu.edu.cn [College of pharmacy and biological engineering, Chengdu University, Chengdu, 610106 (China)

    2016-12-30

    Highlights: • Water vapors seem to hugely improve the electrochemical activity of the Pt and Pt-Ir porous ceramic electrodes. • The gas sensors based on the Pt and Pt-Ir alloy electrodes possess good sensing performances. • The reaction path of the ammonia on platinum has been discussed. - Abstract: Room temperature NH{sub 3} gas sensors based on Pt and Pt-Ir (Ir doping Pt) porous ceramic electrodes have been fabricated by both electroplating and sputtering methods. The properties of the gaseous ammonia sensors have been examined by polarization and chronoamperometry techniques. The influence of humidity on the features of the resulting sensors in the system has also been discussed, and the working potential was optimized. Water vapors seem to hugely improve the electrochemical activity of the electrode. With increasing the relative humidity, the response of the Pt-Ir(E)/Pt(S)/PCP sensor to NH{sub 3} gas could be enhanced remarkably, and the sensitivity increases from 1.14 to 12.06 μA ppm{sup −1} cm{sup −2} .Then we have also discussed the sensing mechanism of the Pt-Ir sensor and the result has been confirmed by X-ray photoelectron spectroscopy of the electrode surface before and after reaction in the end.

  3. Gadolinium-doped ceria nanopowders synthesized by urea-based homogeneous co-precipitation (UBHP)

    Energy Technology Data Exchange (ETDEWEB)

    Accardo, G., E-mail: d16605@kist.re.kr [Fuel Cell Research Center, Korea Institute of Science and Technology, Hwarangno 14-gil, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Spiridigliozzi, L. [Department of Civil and Mechanical Engineering, INSTM Research Unit, University of Cassino and Southern Lazio, Via G. Di Biasio 43, 03043 Cassino, FR (Italy); Cioffi, R.; Ferone, C. [Department of Engineering, INSTM Research Unit, University Parthenope of Naples, Centro Direzionale, Is. C4, 80143 Napoli (Italy); Di Bartolomeo, E. [Department of Chemical Science and Technology, University of Rome “Tor Vergata”, Viale della Ricerca Scientifica, 00133 Rome (Italy); Yoon, Sung Pil [Fuel Cell Research Center, Korea Institute of Science and Technology, Hwarangno 14-gil, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Dell’Agli, G. [Department of Civil and Mechanical Engineering, INSTM Research Unit, University of Cassino and Southern Lazio, Via G. Di Biasio 43, 03043 Cassino, FR (Italy)

    2017-02-01

    Gadolinium (10%)-doped ceria was successfully synthesized by using an urea-based co-precipitation method (UBHP). A single fluorite phase was obtained after a low temperature (400 °C) calcination treatment. The resulting powders showed grains of nanometric size with some agglomerations and an overall good sinterability. Pellets were sintered at 1300 and 1500 °C for 3 h. The ionic conductivity was measured by electrochemical impedance spectroscopy measurements and a correlation between electrical properties and microstructure was revealed. The promising conductivity values showed that the synthesized powders are suitable for intermediate temperature solid oxide fuel cells (IT-SOFCs) applications. - Highlights: • Urea-based homogeneous co-precipitation is applied to synthesize nanocrystalline GDC. • Dense GDC samples at different sintering temperatures were characterized. • SEM and TEM revealed a well define microstructure and controlled composition. • Correlation between electrochemical properties by EIS and microstructure was discussed. • UBHP method can be used to prepare high performance GDC electrolytes.

  4. Local sensor based on nanowire field effect transistor from inhomogeneously doped silicon on insulator

    Science.gov (United States)

    Presnov, Denis E.; Bozhev, Ivan V.; Miakonkikh, Andrew V.; Simakin, Sergey G.; Trifonov, Artem S.; Krupenin, Vladimir A.

    2018-02-01

    We present the original method for fabricating a sensitive field/charge sensor based on field effect transistor (FET) with a nanowire channel that uses CMOS-compatible processes only. A FET with a kink-like silicon nanowire channel was fabricated from the inhomogeneously doped silicon on insulator wafer very close (˜100 nm) to the extremely sharp corner of a silicon chip forming local probe. The single e-beam lithographic process with a shadow deposition technique, followed by separate two reactive ion etching processes, was used to define the narrow semiconductor nanowire channel. The sensors charge sensitivity was evaluated to be in the range of 0.1-0.2 e /√{Hz } from the analysis of their transport and noise characteristics. The proposed method provides a good opportunity for the relatively simple manufacture of a local field sensor for measuring the electrical field distribution, potential profiles, and charge dynamics for a wide range of mesoscopic objects. Diagnostic systems and devices based on such sensors can be used in various fields of physics, chemistry, material science, biology, electronics, medicine, etc.

  5. Assessment of sediment quality based on acid-volatile sulfide and simultaneously extracted metals in heavily industrialized area of Asaluyeh, Persian Gulf: concentrations, spatial distributions, and sediment bioavailability/toxicity.

    Science.gov (United States)

    Arfaeinia, Hossein; Nabipour, Iraj; Ostovar, Afshin; Asadgol, Zahra; Abuee, Ehsan; Keshtkar, Mozhgan; Dobaradaran, Sina

    2016-05-01

    Sediment samples from the coastal area of Asaluyeh harbor were collected during autumn and spring 2015. The acid-volatile sulfide (AVS) and simultaneously extracted metals (SEMs) were measured to assess the sediment quality and potential ecological risks. The average concentrations (and relative standard deviation (RSD)) of AVS in the industrial sediments were 12.32 μmol/g (36.91) and 6.34 μmol/g (80.05) in autumn and spring, respectively, while in the urban area, these values were 0.44 μmol/g (123.50) and 0.31 μmol/g (160.0) in autumn and spring, respectively. The average concentrations of SEM (and RSD) in the industrial sediments were 15.02 μmol/g (14.38) and 12.34 μmol/g (20.65) in autumn and spring, respectively, while in the urban area, these values were 1.10 μmol/g (43.03) and 1.06 μmol/g (55.59) in autumn and spring, respectively. Zn was the predominant component (34.25-86.24 %) of SEM, while the corresponding value for Cd, much more toxic ingredient, was less than 1 %. Some of the coastal sediments in the harbor of Asaluyeh (20 and 47 % in autumn and spring, respectively) had expected adverse biological effects based on the suggested criterion by United States Environmental Protection Agency (USEPA), while most stations (80 and 53 % in autumn and spring, respectively) had uncertain adverse effects.

  6. Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant

    KAUST Repository

    Matsuoka, Hirofumi; Kanahashi, Kaito; Tanaka, Naoki; Shoji, Yoshiaki; Li, Lain-Jong; Pu, Jiang; Ito, Hiroshi; Ohta, Hiromichi; Fukushima, Takanori; Takenobu, Taishi

    2018-01-01

    Hole carrier doping into single-crystalline transition metal dichalcogenide (TMDC) films can be achieved with various chemical reagents. However, large-area polycrystalline TMDC monolayers produced by a chemical vapor deposition (CVD) growth method have yet to be chemically doped. Here, we report that a salt of a two-coordinate boron cation, Mes2B+ (Mes: 2,4,6-trimethylphenyl group), with a chemically stable tetrakis(pentafluorophenyl)borate anion, [(C6F5)4B]−, can serve as an efficient hole-doping reagent for large-area CVD-grown tungsten diselenide (WSe2) films. Upon doping, the sheet resistance of large-area polycrystalline WSe2 monolayers decreased from 90 GΩ/sq to 3.2 kΩ/sq.

  7. Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant

    KAUST Repository

    Matsuoka, Hirofumi

    2018-01-18

    Hole carrier doping into single-crystalline transition metal dichalcogenide (TMDC) films can be achieved with various chemical reagents. However, large-area polycrystalline TMDC monolayers produced by a chemical vapor deposition (CVD) growth method have yet to be chemically doped. Here, we report that a salt of a two-coordinate boron cation, Mes2B+ (Mes: 2,4,6-trimethylphenyl group), with a chemically stable tetrakis(pentafluorophenyl)borate anion, [(C6F5)4B]−, can serve as an efficient hole-doping reagent for large-area CVD-grown tungsten diselenide (WSe2) films. Upon doping, the sheet resistance of large-area polycrystalline WSe2 monolayers decreased from 90 GΩ/sq to 3.2 kΩ/sq.

  8. Destabilized LiBH4-NaAlH4 Mixtures Doped with Titanium Based Catalysts

    DEFF Research Database (Denmark)

    Shi, Qing; Yu, Xuebin; Feidenhans'l, Robert

    2008-01-01

    We investigate the hydrogen storage properties of the mixed complex hydride LiBH4-NaAlH4 system, both undoped and doped with a TiCl3 additive. The mixed system is found to initiate a transformation to LiBH4-NaAlH4 after ball-milling, and the doped system is found to have a significant lower hydro...

  9. Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias

    International Nuclear Information System (INIS)

    Pooth, Alexander; Uren, Michael J.; Cäsar, Markus; Kuball, Martin; Martin, Trevor

    2015-01-01

    Charge trapping and transport in the carbon doped GaN buffer of a GaN-based hetero-structure field effect transistor (HFET) has been investigated under both positive and negative substrate bias. Clear evidence of redistribution of charges in the carbon doped region by thermally generated holes is seen, with electron injection and capture observed during positive bias. Excellent agreement is found with simulations. It is shown that these effects are intrinsic to the carbon doped GaN and need to be controlled to provide reliable and efficient GaN-based power HFETs

  10. Solid-State Thin-Film Supercapacitors with Ultrafast Charge/Discharge Based on N-Doped-Carbon-Tubes/Au-Nanoparticles-Doped-MnO2 Nanocomposites.

    Science.gov (United States)

    Lv, Qiying; Wang, Shang; Sun, Hongyu; Luo, Jun; Xiao, Jian; Xiao, JunWu; Xiao, Fei; Wang, Shuai

    2016-01-13

    Although carbonaceous materials possess long cycle stability and high power density, their low-energy density greatly limits their applications. On the contrary, metal oxides are promising pseudocapacitive electrode materials for supercapacitors due to their high-energy density. Nevertheless, poor electrical conductivity of metal oxides constitutes a primary challenge that significantly limits their energy storage capacity. Here, an advanced integrated electrode for high-performance pseudocapacitors has been designed by growing N-doped-carbon-tubes/Au-nanoparticles-doped-MnO2 (NCTs/ANPDM) nanocomposite on carbon fabric. The excellent electrical conductivity and well-ordered tunnels of NCTs together with Au nanoparticles of the electrode cause low internal resistance, good ionic contact, and thus enhance redox reactions for high specific capacitance of pure MnO2 in aqueous electrolyte, even at high scan rates. A prototype solid-state thin-film symmetric supercapacitor (SSC) device based on NCTs/ANPDM exhibits large energy density (51 Wh/kg) and superior cycling performance (93% after 5000 cycles). In addition, the asymmetric supercapacitor (ASC) device assembled from NCTs/ANPDM and Fe2O3 nanorods demonstrates ultrafast charge/discharge (10 V/s), which is among the best reported for solid-state thin-film supercapacitors with both electrodes made of metal oxide electroactive materials. Moreover, its superior charge/discharge behavior is comparable to electrical double layer type supercapacitors. The ASC device also shows superior cycling performance (97% after 5000 cycles). The NCTs/ANPDM nanomaterial demonstrates great potential as a power source for energy storage devices.

  11. Synthesis and study of the magnetic properties of thallium-based over-doped superconducting compounds

    International Nuclear Information System (INIS)

    Opagiste, C.

    1994-07-01

    The synthesis, structure and magnetic properties of the normal and superconducting states of over-doped Tl 2 Ba 2 Cu O 6±x and Tl 2 Ba 2 Ca Cu 2 O 8±x superconducting compounds, are presented. Synthesis under high pressure using Tl 2 Ba 2 O 5 as a precursor avoids thallium losses and Ba Cu O 2 formation. The entire over-doped region has been investigated (Tc ranging from 0 to 92 K) and the different stability zones for the two crystallographic structures have been explored. The orthorhombic structure is shown to be stoichiometric in cations, while the tetragonal one could present thallium deficiency. Clear correlations have been established between Tc and the lattice parameters for the two phases. It has been observed that the Meissner fraction increased with Tc and that the reversibility domain was more extended for samples having a Tc near the maximal value, which must be linked to the decrease of the anisotropy with over-doping. In the reversible regime, the mixed state is affected by thermal fluctuations around Tc. Evolution of the penetration depth with Tc is examined; it shows that the optimum doped compound (maximal Tc) behaves as a BCS type superconductor. The over-doping results in a penetration depth behaviour which strongly deviates from the standard model (BCS, two fluids). The zero temperature, obtained by extrapolation, seems to be independent of the over-doping. 54 figs., 3 tabs., 168 refs

  12. Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD

    International Nuclear Information System (INIS)

    Tao Zhikuo; Zhang Rong; Xiu Xiangqian; Cui Xugao; Li Xin; Xie Zili; Zheng Youdou; Li Li; Zheng Rongkun; Ringer, Simon P

    2012-01-01

    We have grown transition metal (Fe, Mn) doped GaN thin films on c-oriented sapphire by metal-organic chemical vapor deposition. By varying the flow of the metal precursor, a series of samples with different ion concentrations are synthesized. Microstructural properties are characterized by using a high-resolution transmission electron microscope. For Fe over-doped GaN samples, hexagonal Fe 3 N clusters are observed with Fe 3 N(0002) parallel to GaN (0002) while for Mn over-doped GaN, hexagonal Mn 6 N 2.58 phases are observed with Mn 6 N 2.58 (0002) parallel to GaN(0002). In addition, with higher concentration ions doping into the lattice matrix, the partial lattice orientation is distorted, leading to the tilt of GaN(0002) planes. The magnetization of the Fe over-doped GaN sample is increased, which is ascribed to the participation of ferromagnetic iron and Fe 3 N. The Mn over-doped sample displays very weak ferromagnetic behavior, which probably originates from the Mn 6 N 2.58 . (semiconductor materials)

  13. Record power, ultra-broadband supercontinuum source based on highly GeO2 doped silica fiber

    DEFF Research Database (Denmark)

    Jain, Deepak; Sidharthan, R.; Moselund, Peter M.

    2016-01-01

    the potential of germania based photonic crystal fiber or a step-index fiber supercontinuum source for high power ultra-broad band emission being by pumped a 1060 nm or a 1550 nm laser source. To the best of our knowledge, this is the record power, ultra-broadband, and all-fiberized supercontinuum light source...... based on silica and germania fiber ever demonstrated to the date. (C) 2016 Optical Society of America......We demonstrate highly germania doped fibers for mid-infrared supercontinuum generation. Experiments ensure a highest output power of 1.44 W for a broadest spectrum from 700 nm to 3200 nm and 6.4 W for 800 nm to 2700 nm from these fibers, while being pumped by a broadband Erbium-Ytterbium doped...

  14. Materials Integration and Doping of Carbon Nanotube-based Logic Circuits

    Science.gov (United States)

    Geier, Michael

    symmetric threshold voltages. Additionally, a novel n-type doping procedure for SWCNT TFTs was also developed utilizing a solution-processed organometallic small molecule to demonstrate the first network top-gated n-type SWCNT TFTs. Lastly, new doping and encapsulation layers were incorporated to stabilize both p-type and n-type SWCNT TFT electronic properties, which enabled the fabrication of large-scale memory circuits. Employing these materials and processing advances has addressed many application specific barriers to commercialization. For instance, the first thin-film SWCNT complementary metal-oxide-semi-conductor (CMOS) logic devices are demonstrated with sub-nanowatt static power consumption and full rail-to-rail voltage transfer characteristics. With the introduction of a new n-type Rh-based molecular dopant, the first SWCNT TFTs are fabricated in top-gate geometries over large areas with high yield. Then by utilizing robust encapsulation methods, stable and uniform electronic performance of both p-type and n-type SWCNT TFTs has been achieved. Based on these complementary SWCNT TFTs, it is possible to simulate, design, and fabricate arrays of low-power static random access memory (SRAM) circuits, achieving large-scale integration for the first time based on solution-processed semiconductors. Together, this work provides a direct pathway for solution processable, large scale, power-efficient advanced integrated logic circuits and systems.

  15. Improvement of routes and production of CaSO4-based dosimeters with unusual doping

    International Nuclear Information System (INIS)

    Junot, Danilo Oliveira

    2017-01-01

    The widespread use of ionizing radiation in medicine and industry, associated with the known risks that this type of radiation can cause, has motivated the search for new radiation detectors, seeking improvements in the dosimetric characteristics and in the cost of production in comparison with commercial dosimeters disseminated. The motivation of this work is, therefore, to produce new thermoluminescent detectors through improved routes. Unusual elements in CaSO 4 matrix doping, such as terbium (Tb) and ytterbium (Yb), were used as dopants in this matrix, as well as the europium (Eu), the thulium (Tm) and the silver (Ag), resulting in samples of CaSO 4 :Eu,Tb, CaSO 4 :Tb,Yb, CaSO 4 :Tm,Ag and CaSO 4 :Eu,Ag that were prepared by means of an adaptation of the method developed by Yamashita (1971). The route of synthesis is based on the mixture of calcium carbonate (CaCO 3 ) and dopant oxide (except for silver, incorporated in the form of metallic nanoparticles) in a solution of sulfuric acid. The mixture is heated until all the acid evaporates and only the powder of the material remains. In this route, the sulfuric acid is collected and can be reused. The phosphors produced were characterized by X-ray diffraction and radioluminescence techniques. The silver particles, produced by the polyol method, were characterized by scanning electron microscopy. Composites were obtained from the addition of Teflon to the phosphors. The thermoluminescence (TL) and the optically stimulated luminescence (OSL) of the new materials produced were investigated. Thermoluminescent characteristics such as sensitivity, linearity, reproducibility, minimum detectable dose, kinetic order and fading were evaluated and discussed. The CaSO 4 :Tb,Eu composites showed TL glow curves with peaks at temperatures of 170 °C, 270 °C and 340 °C. The CaSO 4 :Tb,Yb composites presented TL glow curves with peaks at temperatures of 90 °C, 160 °C, 240 °C and 340 °C. CaSO 4 :Tm showed peaks at

  16. White organic light-emitting diodes based on doped and ultrathin Rubrene layer

    Science.gov (United States)

    Li, Yi; Jiang, Yadong; Wen, Wen; Yu, Junsheng

    2010-10-01

    Based on a yellow fluorescent dye of 5, 6, 11, 12-tetraphenylnaphthacene (Rubrene), WOLEDs were fabricated, with doping structure and ultrathin layer structure utilized in the devices. By doping Rubrene into blue-emitting N,N'-bis-(1- naphthyl)-N,N'-biphenyl-1,1'-biphenyl-4,4'-diamine (NPB), the device with a structure of indium-tin-oxide (ITO)/NPB (40 nm)/NPB:Rubrene (0.25 wt%, 7 nm)/2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) (30 nm)/Mg:Ag exhibited a warm white light with Commissions Internationale De L'Eclairage (CIE) coordinates of (0.38, 0.41) at 12 V. The electroluminescent spectrum of the OLED consisted of blue and yellow fluorescent emissions, the intensity of blue emission increased gradually relative to the orange emission with increasing voltage. This is mainly due to the recombination zone shifted towards the anode side as the transmission rate of electrons grows faster than that of holes under higher bias voltage. A maximum luminance of 7300 cd/m2 and a maximum power efficiency of 0.57 lm/W were achieved. Comparatively, by utilizing ultrathin dopant layer, the device with a structure of ITO/NPB (40 nm)/Rubrene (0.3 nm)/NPB (7 nm)/BCP (30 nm)/Mg:Ag achieved a low turn-on voltage of 3 V and a more stable white light. The peaks of EL spectra located at 430 and 560 nm corresponding to the CIE coordinates of (0.32, 0.32) under bias voltage ranging from 5 to 15 V. A maximum luminance of 5630 cd/m2 and a maximum power efficiency of 0.6 lm/W were achieved. The balanced spectra were attributed to the stable confining of charge carriers and exciton by the thin emitting layers. Hence, with simple device structure and fabricating process, the device with ultrathin layer achieved low turn-on voltage, stable white light emitting and higher power efficiency.

  17. Anode-supported single-chamber SOFCs based on gadolinia doped ceria electrolytes

    Directory of Open Access Journals (Sweden)

    Morales, M.

    2008-12-01

    Full Text Available The utilization of anode supported electrolytes is a useful strategy to increase the electrical properties of the solid oxide fuel cells, because it is possible to decrease considerably the thickness of the electrolytes. We have prepared successfully singlechamber fuel cells of gadolinia doped ceria electrolytes Ce1-xGdxO2-y (CGO supported on an anode formed by a cermet of Ni-CGO. Mixtures of precursor powders of NiO and gadolinium doped ceria with different particle sizes and compositions were analyzed to obtain optimal bulk porous anodes to be used as anode supported fuel cells. Doped ceria electrolytes were prepared by sol-gel related techniques. Then, ceria based electrolytes were deposited by dip coating at different thickness (15-30 µm using an ink prepared with nanometric powders of electrolytes dispersed in a commercial liquid polymer. Cathodes of La1-xSrxCoO3-s (LSCO were also prepared by sol-gel related techniques and were deposited by dip coating on the electrolyte thick films. Finally, electrical properties were determined in a single-chamber reactor where propane as fuel was mixed with synthetic air above the higher explosive limit. Stable density currents were obtained in these experimental conditions, but flow rates of the carrier gas and propane partial pressure were determinants for the optimization of the electrical properties of the fuel cells.

    La utilización de electrolitos soportados en el ánodo es una estrategia muy útil para mejorar las propiedades eléctricas de las pilas de combustible de óxido sólido, debido a que permiten disminuir considerablemente el espesor de los electrolitos. Para este trabajo, se han preparado exitosamente pilas de combustible de óxido sólido con electrolitos de ceria dopada con Gd, Ce1-xGdxO2-y (CGO soportados sobre un ánodo formado por un cermet de Ni/CGO. Dichas pilas se han

  18. Preparation and leaching property of Nd-doped zirconolite-based glass-ceramic

    International Nuclear Information System (INIS)

    Wu Lang; Xu Dong; Teng Yuancheng; Li Yuxiang; Liu Zongqiang

    2014-01-01

    Nd-doped zirconolite-based glass-ceramics were prepared by melting-heat treatment technique. The effects of heat treatment processing on phase structure of the glass-ceramics were investigated. The leaching properties of the glass-ceramics were also evaluated by static leaching experiments (product consistency test, PCT). The results show that glass transformation temperature (T g ) and crystallization temperature of the glass-ceramics are about 580℃ and 740℃, respectively. CaTiO 3 phase forms easily when the glass-ceramics were prepared by two-step method, i.e. the glass was prepared first, and then it was heat-treated at the crystallization temperatures. 2M-zirconolite phase can be obtained by one-step method, i.e. the heat-treatment immediately followed by the melting process. In addition, the zirconolite crystals exhibit a dendritic shape. The normalized mass loss of B and Na in the glass-ceramics remains almost unchanged (about 1 mg/m 2 ) after 14 days, while the normalized mass loss of Nd reaches stable value (about 0.2 mg/m 2 ) after 28 days. The normalized mass loss of B, Na, and Nd in the glass-ceramics is an order of magnitude lower than that of borosilicate glasses, respectively. (authors)

  19. First-principle approach based bandgap engineering for cubic boron nitride doped with group IIA elements

    Science.gov (United States)

    Li, Yubo; Wang, Pengtao; Hua, Fei; Zhan, Shijie; Wang, Xiaozhi; Luo, Jikui; Yang, Hangsheng

    2018-03-01

    Electronic properties of cubic boron nitride (c-BN) doped with group IIA elements were systematically investigated using the first principle calculation based on density functional theory. The electronic bandgap of c-BN was found to be narrowed when the impurity atom substituted either the B (IIA→B) or the N (IIA→N) atom. For IIA→B, a shallow accept level degenerated into valence band (VB); while for IIA→N, a shallow donor level degenerated conduction band (CB). In the cases of IIBe→N and IIMg→N, deep donor levels were also induced. Moreover, a zigzag bandgap narrowing pattern was found, which is in consistent with the variation pattern of dopants' radius of electron occupied outer s-orbital. From the view of formation energy, the substitution of B atom under N-rich conditions and the substitution of N atom under B-rich conditions were energetically favored. Our simulation results suggested that Mg and Ca are good candidates for p-type dopants, and Ca is the best candidate for n-type dopant.

  20. Preparation and characterization of polymer nanocomposites based on PVDF/PVC doped with graphene nanoparticles

    Directory of Open Access Journals (Sweden)

    I.S. Elashmawi

    Full Text Available Novel nanocomposites based on PVDF/PVC blend containing graphene oxide nanoparticles (GO were prepare using sonicator. IR analysis revealed that the addition of GO prompts a crystal transformation of α-phase of PVDF. The change of the structural before and after adding GO to PVDF/PVC were studied by X-ray diffraction. A decrease in activation energy gap from UV data was observed with increasing GO content, implying a variation of reactivity as a result of reaction extent. The variation of ε′ with frequency is nearly the same as that of ε″. At higher frequencies, the decrease of both ε′ and ε″ becomes nearly constant. The dispersion at lower frequencies ε′ of ε′ polarization is of Maxwell–Wagner interfacial polarization but at higher frequencies, it levels off. The behavior of conductivity (σAC tends to acquire constant values approaching it DC values. The values of σAC was increased after doped GO with exponential increase after the critical value of frequency. All nanocomposites behaved the same fashion revealing that a higher number of polarons were getting added to conducting pool in composites as graphene content was increased. Conduction mechanism appeared to be getting expedited with increasing frequency due to fact that increase in frequency enhances polaron hopping frequency. Keywords: Nanocomposites, Graphene oxide, FT-IR, X-ray, AC conductivity

  1. Structural and morphological study of Fe-doped Bi-based superconductor

    Science.gov (United States)

    Singh, Yadunath; Kumar, Rohitash

    2018-05-01

    In the present work, we report the study of iron-doped Bi-based superconductor sample with stoichiometric composition of Bi2Sr2Can-1(Cu1-x Fex)3O2n+4 where n=3 and x = 0.7. This sample was prepared by grinding the precursor oxides in the Ball mill for 6 hours continuous at the rate of 400 rpm for a proper mixing and to obtain the required grain size. Then the solid-state reaction method was used to prepare the sample. X-ray diffraction (XRD) and scanning electron microscopy (SEM) in combination with energy dispersive X-ray fluorescence analysis (EDX) were performed for determination of the crystal structure, surface morphology and trace the material elements of samples, respectively. The surface microscopy data were collected over a selected area of the surface of the material and a two-dimensional image generated that displays spatial variations in properties including chemical characterization and orientation of materials.

  2. Ionizing Radiation Detectors Based on Ge-Doped Optical Fibers Inserted in Resonant Cavities

    Directory of Open Access Journals (Sweden)

    Saverio Avino

    2015-02-01

    Full Text Available The measurement of ionizing radiation (IR is a crucial issue in different areas of interest, from environmental safety and industrial monitoring to aerospace and medicine. Optical fiber sensors have recently proven good candidates as radiation dosimeters. Here we investigate the effect of IR on germanosilicate optical fibers. A piece of Ge-doped fiber enclosed between two fiber Bragg gratings (FBGs is irradiated with gamma radiation generated by a 6 MV medical linear accelerator. With respect to other FBG-based IR dosimeters, here the sensor is only the bare fiber without any special internal structure. A near infrared laser is frequency locked to the cavity modes for high resolution measurement of radiation induced effects on the fiber optical parameters. In particular, we observe a variation of the fiber thermo-optic response with the radiation dose delivered, as expected from the interaction with Ge defect centers, and demonstrate a detection limit of 360 mGy. This method can have an impact in those contexts where low radiation doses have to be measured both in small volumes or over large areas, such as radiation therapy and radiation protection, while bare optical fibers are cheap and disposable.

  3. Development of amperometric L-tyrosine sensor based on Fe-doped hydroxyapatite nanoparticles

    International Nuclear Information System (INIS)

    Kanchana, P.; Lavanya, N.; Sekar, C.

    2014-01-01

    A novel biosensor based on Fe-doped hydroxyapatite (Fe-HA) nanoparticles and tyrosinase has been developed for the detection of L-tyrosine. Nanostructured Fe-HA was synthesized by a simple microwave irradiation method, and its phase formation, morphology and magnetic property were examined by powder X-ray diffraction (XRD), transmission electron microscopy (TEM) and vibrating sample magnetometer (VSM). Electrochemical performance of the nano Fe-HA/tyrosinase modified glassy carbon electrode (GCE) for detection of L-tyrosine was investigated by cyclic voltammetry (CV) and amperometric methods. The fabricated biosensor exhibited a linear response to L-tyrosine over a wide concentration range of 1.0 × 10 −7 to 1.0 × 10 −5 M with a detection limit of 245 nM at pH 7.0. In addition, the fabricated sensor showed an excellent selectivity, good reproducibility, long-term stability and anti-interference towards the determination of L-tyrosine. - Highlights: • A novel amperometric L-tyrosine biosensor has been fabricated using nanostructured Fe-HA. • The fabricated sensor exhibits a wide linear range, good stability and high reproducibility. • Fe-HA assists microenvironment and direct electron transfer between enzyme and electrode surface. • The nano Fe-HA and electrode fabrication procedure are simple and less expensive

  4. UV Radiation Detection Using Optical Sensor Based on Eu3+ Doped PMMA

    Directory of Open Access Journals (Sweden)

    Miluski Piotr

    2016-12-01

    Full Text Available Progress in UV treatment applications requires new compact and sensor constructions. In the paper a hybrid (organic-inorganic rare-earth-based polymeric UV sensor construction is proposed. The efficient luminescence of poly(methyl methacrylate (PMMA matrix doped by europium was used for testing the optical sensor (optrode construction. The europium complex assures effective luminescence in the visible range with well determined multi-peak spectrum emission enabling construction of the optrode. The fabricated UV optical fibre sensor was used for determination of Nd:YAG laser intensity measurements at the third harmonic (355 nm in the radiation power range 5.0-34.0 mW. The multi-peak luminescence spectrum was used for optimization of the measurement formula. The composition of luminescent peak intensity enables to increase the slope of sensitivity up to −2.8 mW-1. The obtained results and advantages of the optical fibre construction enable to apply it in numerous UV detection systems.

  5. Germanium content and base doping level influence on extrinsic base resistance and dynamic performances of SiGe:C heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Ramirez-Garcia, E; Valdez-Monroy, L A; Rodriguez-Mendez, L M; Valdez-Perez, D; Galaz-Larios, M C; Enciso-Aguilar, M A; Zerounian, N; Aniel, F

    2014-01-01

    We describe a reliable technique to separate the different contributions to the apparent base resistance (R B  = R Bx  + X R Bi ) of silicon germanium carbon (SiGe:C) heterojunction bipolar transistors (HBTs). The extrinsic base resistance (R Bx ) is quantified using small-signal measurements. The base-collector junction distribution factor (X) and the intrinsic base resistance (R Bi ) are extracted from high frequency noise (MWN) measurements. This method is applied to five different SiGe:C HBTs varying in base doping level and germanium content. The results show that high doping levels improve high frequency noise performances while germanium gradient helps to maintain outstanding dynamic performances. This method could be used to elucidate the base technological configuration that ensures low noise together with remarkable dynamic performances in state-of-the-art SiGe:C HBTs. (paper)

  6. Stabilizing cinder gravels for heavily trafficked base course ...

    African Journals Online (AJOL)

    Investigation into the improvement of natural cinder gravels with the use of stabilization techniques was made using samples collected from quarry sites near Alemgena and Lake Chamo. Mechanical and cement stabilizations were investigated in two subsequent phases. In the first phase, optimum amount of fine soils that ...

  7. Evaluation of surface energy state distribution and bulk defect concentration in DSSC photoanodes based on Sn, Fe, and Cu doped TiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Ako, Rajour Tanyi [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam); Ekanayake, Piyaisiri, E-mail: piyasiri.ekanayake@ubd.edu.bn [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam); Young, David James [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam); Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research -A*STAR, 3 Research Link, 117602 (Singapore); Faculty of Science, Health, Education and Engineering, University of the Sunshine Coast, Locked Bag 4, Maroochydore DC, Queensland, 4558 (Australia); Hobley, Jonathan [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam); Chellappan, Vijila [Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research - A*STAR, 3 Research Link, 117602 (Singapore); Tan, Ai Ling [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam); Gorelik, Sergey; Subramanian, Gomathy Sandhya [Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research - A*STAR, 3 Research Link, 117602 (Singapore); Lim, Chee Ming [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam)

    2015-10-01

    Graphical abstract: - Highlights: • The structural, optical and optoelectronic properties of 1 mol.% Fe, Sn and Cu doped TiO{sub 2} have been compared. • Transient lifetimes for pure TiO{sub 2} and Sn doped TiO{sub 2} were considerably shorter than Fe and Cu doped TiO{sub 2}. • A good correlation between the bulk defects and transient decay for the doped TiO{sub 2} powders was observed. • Photon to current conversion efficiency of DSSC based on the metal doped TiO{sub 2} were in order Sn-TiO{sub 2} > Cu-TiO{sub 2} > Pure >> Fe-TiO{sub 2}. • DSSC based on Fe doped photoanodes is limited by a high concentration of surface free holes observed at 433 nm. - Abstract: Electron transfer dynamics in the oxide layers of the working electrodes in both dye-sensitized solar cells and photocatalysts greatly influences their performance. A proper understanding of the distribution of surface and bulk energy states on/in these oxide layers can provide insights into the associated electron transfer processes. Metal ions like Iron (Fe), Copper (Cu) and Tin (Sn) doped onto TiO{sub 2} have shown enhanced photoactivity in these processes. In this work, the structural, optical and transient properties of Fe, Cu and Sn doped TiO{sub 2} nanocrystalline powders have been investigated and compared using EDX, Raman spectroscopy, X-ray Photoelectron spectroscopy (XPS), and Transient Absorption spectroscopy (TAS). Surface free energy states distributions were probed using Electrochemical Impedance spectroscopy (EIS) on Dye Sensitized Solar Cells (DSSC) based on the doped TiO{sub 2} photoanodes. Raman and XPS Ti2p{sub 3/2} peak shifts and broadening showed that the concentration of defects were in the order: Cu doped TiO{sub 2} > Fe doped TiO{sub 2} > Sn doped TiO{sub 2} > pure TiO{sub 2}. Nanosecond laser flash photolysis of Fe and Cu doped TiO{sub 2} indicated slower transient decay kinetics than that of Sn doped TiO{sub 2} or pure TiO{sub 2}. A broad absorption peak and fast

  8. Explosive phenomena in heavily irradiated NaCl

    NARCIS (Netherlands)

    denHartog, HW; Vainshtein, DI; Matthews, GE; Williams, RT

    1997-01-01

    In heavily irradiated NaCl crystals explosive phenomena can be initiated during irradiation or afterwards when samples are heated to temperatures between 100 and 250 degrees C. During irradiation of NaCl Na and Cl-2 precipitates and void structures are produced along with the accumulation of stored

  9. Electrical activation of nitrogen heavily implanted 3C-SiC(1 0 0)

    Energy Technology Data Exchange (ETDEWEB)

    Li, Fan, E-mail: f.li.1@warwick.ac.uk [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom); Sharma, Yogesh; Shah, Vishal; Jennings, Mike [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom); Pérez-Tomás, Amador [ICN2 – Institut Catala de Nanociència i Nanotecnologia, Campus UAB, 08193 Bellaterra, Barcelona (Spain); Myronov, Maksym [Physics Department, University of Warwick, Coventry CV4 7AL (United Kingdom); Fisher, Craig [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom); Leadley, David [Physics Department, University of Warwick, Coventry CV4 7AL (United Kingdom); Mawby, Phil [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom)

    2015-10-30

    Highlights: • Nitrogen is fully activated by 1175 °C annealing for 1.5 × 10{sup 19} cm{sup −3} doped 3C-SiC. • Free donor concentration is found to readily saturate in 3C-SiC at ∼7 × 10{sup 19} cm{sup −3}. • 3C-SiC is found to have complete donor thermal ionization above 150 K. • Donor in 1.5 × 10{sup 19} cm{sup −3} nitrogen implanted 3C-SiC has an energy level ∼15 meV. • The SiO{sub 2} cap is found to have a bigger influence on low and medium doped samples. - Abstract: A degenerated wide bandgap semiconductor is a rare system. In general, implant levels lie deeper in the band-gap and carrier freeze-out usually takes place at room temperature. Nevertheless, we have observed that heavily doped n-type degenerated 3C-SiC films are achieved by nitrogen implantation level of ∼6 × 10{sup 20} cm{sup −3} at 20 K. According to temperature dependent Hall measurements, nitrogen activation rates decrease with the doping level from almost 100% (1.5 × 10{sup 19} cm{sup −3}, donor level 15 meV) to ∼12% for 6 × 10{sup 20} cm{sup −3}. Free donors are found to saturate in 3C-SiC at ∼7 × 10{sup 19} cm{sup −3}. The implanted film electrical performances are characterized as a function of the dopant doses and post implantation annealing (PIA) conditions by fabricating Van der Pauw structures. A deposited SiO{sub 2} layer was used as the surface capping layer during the PIA process to study its effect on the resultant film properties. From the device design point of view, the lowest sheet resistivity (∼1.4 mΩ cm) has been observed for medium doped (4 × 10{sup 19} cm{sup −3}) sample with PIA 1375 °C 2 h without a SiO{sub 2} cap.

  10. Novel proton conducting polymer electrolytes based on polyparabanic acid doped with H 3PO 4 for high temperature fuel cell

    Science.gov (United States)

    Aihara, Yuichi; Sonai, Atsuo

    Three novel proton conducting polymer electrolytes based on polyparabanic acid doped with H 3PO 4 were synthesized and their use in high temperature fuel cells characterized. The precursor polymers, PMD-Im, POD-Im and PDMDP-Im, were synthesized by cyclization polymerization of diisocynanates. After doping with H 3PO 4, the ionic conductivity and the thermal degradation were studied by using the AC impedance method and thermal gravimetric analysis, respectively. These membranes showed high ionic conductivity of the order of 10 -2 S cm -1 at 423 K with good thermal stability. Their application to fuel cells was demonstrated and polarization curves were obtained at 423 K were obtained without humidification.

  11. Friction and wear behaviour of Mo-W doped carbon-based coating during boundary lubricated sliding

    Science.gov (United States)

    Hovsepian, Papken Eh.; Mandal, Paranjayee; Ehiasarian, Arutiun P.; Sáfrán, G.; Tietema, R.; Doerwald, D.

    2016-03-01

    A molybdenum and tungsten doped carbon-based coating (Mo-W-C) was developed in order to provide low friction in boundary lubricated sliding condition at ambient and at high temperature. The Mo-W-C coating showed the lowest friction coefficient among a number of commercially available state-of-the-art DLC coatings at ambient temperature. At elevated temperature (200 °C), Mo-W-C coating showed a significant reduction in friction coefficient with sliding distance in contrast to DLC coatings. Raman spectroscopy revealed the importance of combined Mo and W doping for achieving low friction at both ambient and high temperature. The significant decrease in friction and wear rate was attributed to the presence of graphitic carbon debris (from coating) and 'in situ' formed metal sulphides (WS2 and MoS2, where metals were supplied from coating and sulphur from engine oil) in the transfer layer.

  12. Thermal lens study of thermo-optical properties and concentration quenching of Er3+-doped lead pyrophosphate based glasses

    Energy Technology Data Exchange (ETDEWEB)

    Santos, C. C. [Universidade Federal do Ceara, Ceara, Brazil; Rocha, U. [Grupo de Fotônica e Fluidos Complexos, Instituto de Física, Brazil; Guedes, Ilde [Universidade Federal do Ceara, Ceara, Brazil; Vermelho, M. V. D. [Instituto de Fisica, Universidade Federal de Alagoas, Brazil; Boatner, Lynn A [ORNL; Jacinto, C. [Instituto de Fisica, Universidade Federal de Alagoas, Brazil

    2012-01-01

    In this work, we have used the thermal lens technique combined with conventional spectroscopy to characterize the thermo-optical properties of Er3+-doped lead pyrophosphate-based glasses. More precisely, we have investigated and quantified experimentally the fluorescence quantum efficiencies of the Er3+ levels, and we describe the role of concentration quenching effects. The fluorescence quantum efficiency of the 4I13/2 level is very high when compared to other phosphate glasses, while that of the green-coupled levels is very small. Other important photonic materials parameters, such as the thermal diffusivity and temperature coefficient of the optical path length change, were obtained and compared with those of other glass systems. The cumulative results obtained here for the Er-doped lead pyrophosphate glass show that this material is a good candidate for photonic applications with a characteristic Er3+ infrared emission around 1550 nm.

  13. Doping dependence of the anisotropic quasiparticle interference in NaFe(1-x)Co(x)As iron-based superconductors.

    Science.gov (United States)

    Cai, Peng; Ruan, Wei; Zhou, Xiaodong; Ye, Cun; Wang, Aifeng; Chen, Xianhui; Lee, Dung-Hai; Wang, Yayu

    2014-03-28

    We use scanning tunneling microscopy to investigate the doping dependence of quasiparticle interference (QPI) in NaFe1-xCoxAs iron-based superconductors. The goal is to study the relation between nematic fluctuations and Cooper pairing. In the parent and underdoped compounds, where fourfold rotational symmetry is broken macroscopically, the QPI patterns reveal strong rotational anisotropy. At optimal doping, however, the QPI patterns are always fourfold symmetric. We argue this implies small nematic susceptibility and, hence, insignificant nematic fluctuation in optimally doped iron pnictides. Since TC is the highest this suggests nematic fluctuation is not a prerequistite for strong Cooper pairing.

  14. Relation between film thickness and surface doping of MoS2 based field effect transistors

    Science.gov (United States)

    Lockhart de la Rosa, César J.; Arutchelvan, Goutham; Leonhardt, Alessandra; Huyghebaert, Cedric; Radu, Iuliana; Heyns, Marc; De Gendt, Stefan

    2018-05-01

    Ultra-thin MoS2 film doping through surface functionalization with physically adsorbed species is of great interest due to its ability to dope the film without reduction in the carrier mobility. However, there is a need for understanding how the thickness of the MoS2 film is related to the induced surface doping for improved electrical performance. In this work, we report on the relation of MoS2 film thickness with the doping effect induced by the n-dopant adsorbate poly(vinyl-alcohol). Field effect transistors built using MoS2 films of different thicknesses were electrically characterized, and it was observed that the ION/OFF ratio after doping in thin films is more than four orders of magnitudes greater when compared with thick films. Additionally, a semi-classical model tuned with the experimental devices was used to understand the spatial distribution of charge in the channel and explain the observed behavior. From the simulation results, it was revealed that the two-dimensional carrier density induced by the adsorbate is distributed rather uniformly along the complete channel for thin films (<5.2 nm) contrary to what happens for thicker films.

  15. Diffusivity-mobility relationship for heavily doped semiconductors exhibiting band tails

    International Nuclear Information System (INIS)

    Khan, Arif; Das, Atanu

    2010-01-01

    A relationship between the mobility and diffusivity of semiconductors exhibiting band tails has been presented. The relationship is general enough to be applicable to both non-degenerate and degenerate semiconductors, and to semiconductors with and without band tails. It is suitable for studying electrical transport in these semiconductors.

  16. The electron spin resonance study of heavily nitrogen doped 6H SiC crystals

    Czech Academy of Sciences Publication Activity Database

    Savchenko, Dariia

    2015-01-01

    Roč. 117, č. 4 (2015), "045708-1"-"045708-6" ISSN 0021-8979 R&D Projects: GA ČR GP13-06697P; GA MŠk(CZ) LM2011029 Grant - others:SAFMAT(XE) CZ.2.16/3.1.00/22132 Institutional support: RVO:68378271 Keywords : electron spin resonance * conduction electrons * 6H SiC * insulator-metal transition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.101, year: 2015

  17. On magnetic ordering in heavily sodium substituted hole doped lanthanum manganites

    Energy Technology Data Exchange (ETDEWEB)

    Sethulakshmi, N. [Department of Physics, Cochin University of Science and Technology, Cochin 682022, Kerala (India); Unnimaya, A.N. [Centre for Materials for Electronic Technology (CMET), Thrissur 680581, Kerala (India); Al-Omari, I.A.; Al-Harthi, Salim [Department of Physics, Sultan Qaboos University, PC 123 Muscat (Oman); Sagar, S. [Government College for Women, Thiruvananthapuram 695014, Kerala (India); Thomas, Senoy [Materials Science and Technology Division, National Institute for Interdisciplinary Science and Technology, Thiruvananthapuram 695019, Kerala (India); Srinivasan, G. [Department of Physics, Oakland University, Rochester (United States); Anantharaman, M.R., E-mail: mraiyer@yahoo.com [Department of Physics, Cochin University of Science and Technology, Cochin 682022, Kerala (India)

    2015-10-01

    Mixed valence manganite system with monovalent sodium substituted lanthanum manganites form the basis of the present work. Lanthanum manganites belonging to the series La{sub 1−x}Na{sub x}MnO{sub 3} with x=0.5–0.9 were synthesized using modified citrate gel method. Variation of lattice parameters and unit cell volume with Na concentration were analyzed and the magnetization measurements indicated ferromagnetic ordering in all samples at room temperature. Low temperature magnetization behavior indicated that all samples exhibit antiferromagnetism along with ferromagnetism and it has also been observed that antiferromagnetic ordering dominates ferromagnetic ordering as concentration is increased. Evidence for such a magnetic inhomogeneity in these samples has been confirmed from the variation in Mn{sup 3+}/Mn{sup 4+} ion ratio from X-ray Photoelectron Spectroscopy and from the absorption peak studies using Ferromagnetic Resonance Spectroscopy. - Highlights: • Higher substitution of more than 50 percent of monovalent ion, sodium for La sites in lanthanum manganites scarce in literature. • Structural studies using XRD and further structure refinement by Rietveld refinement confirmed orthorhombic pbnm spacegroup. • Ferromagnetic behavior at room temperature with saturation magnetization decreasing with increase in sodium concentration. • M vs T measurements using FC ZFC proved coexisting FM/AFM behavior arising from exchange interactions between different valence states of Mn ions. • Disparity in ratio of Mn valence ions indicated presence of vacancies providing the role of vacancies and oxygen stoichiometry in deciding magnetic inhomogeneity.

  18. Tailoring the optical properties of amorphous heavily Er3+-doped Ge-Ga-S thin films

    Czech Academy of Sciences Publication Activity Database

    Reddy, N.K.; Devika, M.; Prashantha, M.; Rames, K.; Ivanova, Z.G.; Zavadil, Jiří

    2013-01-01

    Roč. 15, 3-4 (2013), s. 182-186 ISSN 1454-4164 R&D Projects: GA ČR GAP106/12/2384 Institutional support: RVO:67985882 Keywords : Chalcogenide thin films * Optical properties * Photoinduced changes Subject RIV: JA - Electronics ; Optoelectronics , Electrical Engineering Impact factor: 0.563, year: 2013

  19. Doped graphene supercapacitors

    Science.gov (United States)

    Ashok Kumar, Nanjundan; Baek, Jong-Beom

    2015-12-01

    Heteroatom-doped graphitic frameworks have received great attention in energy research, since doping endows graphitic structures with a wide spectrum of properties, especially critical for electrochemical supercapacitors, which tend to complement or compete with the current lithium-ion battery technology/devices. This article reviews the latest developments in the chemical modification/doping strategies of graphene and highlights the versatility of such heteroatom-doped graphitic structures. Their role as supercapacitor electrodes is discussed in detail. This review is specifically focused on the concept of material synthesis, techniques for electrode fabrication and metrics of performance, predominantly covering the last four years. Challenges and insights into the future research and perspectives on the development of novel electrode architectures for electrochemical supercapacitors based on doped graphene are also discussed.

  20. Doped graphene supercapacitors

    International Nuclear Information System (INIS)

    Kumar, Nanjundan Ashok; Baek, Jong-Beom

    2015-01-01

    Heteroatom-doped graphitic frameworks have received great attention in energy research, since doping endows graphitic structures with a wide spectrum of properties, especially critical for electrochemical supercapacitors, which tend to complement or compete with the current lithium-ion battery technology/devices. This article reviews the latest developments in the chemical modification/doping strategies of graphene and highlights the versatility of such heteroatom-doped graphitic structures. Their role as supercapacitor electrodes is discussed in detail. This review is specifically focused on the concept of material synthesis, techniques for electrode fabrication and metrics of performance, predominantly covering the last four years. Challenges and insights into the future research and perspectives on the development of novel electrode architectures for electrochemical supercapacitors based on doped graphene are also discussed. (topical review)

  1. Optical study of Erbium-doped-porous silicon based planar waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Najar, A. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B.P. 80518, 22305 Lannion Cedex (France) and Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 ElManar, Tunis (Tunisia)]. E-mail: najar.adel@laposte.net; Ajlani, H. [Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 ElManar, Tunis (Tunisia); Charrier, J. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B.P. 80518, 22305 Lannion Cedex (France); Lorrain, N. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B.P. 80518, 22305 Lannion Cedex (France); Haesaert, S. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B.P. 80518, 22305 Lannion Cedex (France); Oueslati, M. [Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 ElManar, Tunis (Tunisia); Haji, L. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B.P. 80518, 22305 Lannion Cedex (France)

    2007-06-15

    Planar waveguides were formed from porous silicon layers obtained on P{sup +} substrates. These waveguides were then doped by erbium using an electrochemical method. Erbium concentration in the range 2.2-2.5 at% was determined by energy dispersive X-ray (EDX) analysis performed on SEM cross sections. The refractive index of layers was studied before and after doping and thermal treatments. The photoluminescence of Er{sup 3+} ions in the IR range and the decay curve of the 1.53 {mu}m emission peak were studied as a function of the excitation power. The value of excited Er density was equal to 0.07%. Optical loss contributions were analyzed on these waveguides and the losses were equal to 1.1 dB/cm at 1.55 {mu}m after doping.

  2. A pure silica ytterbium-doped sol–gel-based fiber laser

    International Nuclear Information System (INIS)

    Baz, Assaad; El Hamzaoui, Hicham; Fsaifes, Ihsan; Bouwmans, Géraud; Bouazaoui, Mohamed; Bigot, Laurent

    2013-01-01

    In this letter it is demonstrated that the sol–gel route combined with fiber fabrication by the stack and draw method can be used to realize efficient fiber lasers. More precisely, a pure silica ytterbium-doped photonic crystal fiber with a core obtained by the sol–gel polymeric technique is studied, and a laser efficiency of more than 73% is achieved for a laser emission around 1034 nm. The optical and spectroscopic properties of the monolith and fiber are investigated, together with the sensitivity of the fiber to photodarkening. The dimensions of the ytterbium-doped monolith combined with the uniform doping and refractive index that are reported make this technique particularly interesting for the realization of large-mode area fibers. (letter)

  3. Ultraviolet electroluminescence from nitrogen-doped ZnO-based heterojuntion light-emitting diodes prepared by remote plasma in situ atomic layer-doping technique.

    Science.gov (United States)

    Chien, Jui-Fen; Liao, Hua-Yang; Yu, Sheng-Fu; Lin, Ray-Ming; Shiojiri, Makoto; Shyue, Jing-Jong; Chen, Miin-Jang

    2013-01-23

    Remote plasma in situ atomic layer doping technique was applied to prepare an n-type nitrogen-doped ZnO (n-ZnO:N) layer upon p-type magnesium-doped GaN (p-GaN:Mg) to fabricate the n-ZnO:N/p-GaN:Mg heterojuntion light-emitting diodes. The room-temperature electroluminescence exhibits a dominant ultraviolet peak at λ ≈ 370 nm from ZnO band-edge emission and suppressed luminescence from GaN, as a result of the decrease in electron concentration in ZnO and reduced electron injection from n-ZnO:N to p-GaN:Mg because of the nitrogen incorporation. The result indicates that the in situ atomic layer doping technique is an effective approach to tailoring the electrical properties of materials in device applications.

  4. Effects of the F₄TCNQ-Doped Pentacene Interlayers on Performance Improvement of Top-Contact Pentacene-Based Organic Thin-Film Transistors.

    Science.gov (United States)

    Fan, Ching-Lin; Lin, Wei-Chun; Chang, Hsiang-Sheng; Lin, Yu-Zuo; Huang, Bohr-Ran

    2016-01-13

    In this paper, the top-contact (TC) pentacene-based organic thin-film transistor (OTFT) with a tetrafluorotetracyanoquinodimethane (F₄TCNQ)-doped pentacene interlayer between the source/drain electrodes and the pentacene channel layer were fabricated using the co-evaporation method. Compared with a pentacene-based OTFT without an interlayer, OTFTs with an F₄TCNQ:pentacene ratio of 1:1 showed considerably improved electrical characteristics. In addition, the dependence of the OTFT performance on the thickness of the F₄TCNQ-doped pentacene interlayer is weaker than that on a Teflon interlayer. Therefore, a molecular doping-type F₄TCNQ-doped pentacene interlayer is a suitable carrier injection layer that can improve the TC-OTFT performance and facilitate obtaining a stable process window.

  5. Effects of the F4TCNQ-Doped Pentacene Interlayers on Performance Improvement of Top-Contact Pentacene-Based Organic Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2016-01-01

    Full Text Available In this paper, the top-contact (TC pentacene-based organic thin-film transistor (OTFT with a tetrafluorotetracyanoquinodimethane (F4TCNQ-doped pentacene interlayer between the source/drain electrodes and the pentacene channel layer were fabricated using the co-evaporation method. Compared with a pentacene-based OTFT without an interlayer, OTFTs with an F4TCNQ:pentacene ratio of 1:1 showed considerably improved electrical characteristics. In addition, the dependence of the OTFT performance on the thickness of the F4TCNQ-doped pentacene interlayer is weaker than that on a Teflon interlayer. Therefore, a molecular doping-type F4TCNQ-doped pentacene interlayer is a suitable carrier injection layer that can improve the TC-OTFT performance and facilitate obtaining a stable process window.

  6. Effects of the F4TCNQ-Doped Pentacene Interlayers on Performance Improvement of Top-Contact Pentacene-Based Organic Thin-Film Transistors

    Science.gov (United States)

    Fan, Ching-Lin; Lin, Wei-Chun; Chang, Hsiang-Sheng; Lin, Yu-Zuo; Huang, Bohr-Ran

    2016-01-01

    In this paper, the top-contact (TC) pentacene-based organic thin-film transistor (OTFT) with a tetrafluorotetracyanoquinodimethane (F4TCNQ)-doped pentacene interlayer between the source/drain electrodes and the pentacene channel layer were fabricated using the co-evaporation method. Compared with a pentacene-based OTFT without an interlayer, OTFTs with an F4TCNQ:pentacene ratio of 1:1 showed considerably improved electrical characteristics. In addition, the dependence of the OTFT performance on the thickness of the F4TCNQ-doped pentacene interlayer is weaker than that on a Teflon interlayer. Therefore, a molecular doping-type F4TCNQ-doped pentacene interlayer is a suitable carrier injection layer that can improve the TC-OTFT performance and facilitate obtaining a stable process window. PMID:28787845

  7. Tribological study of novel metal-doped carbon-based coatings with enhanced thermal stability

    Science.gov (United States)

    Mandal, Paranjayee

    and M0S2. This mechanism is believed to be the key-factor for low friction properties of Mo-W-C coating and presence of graphitic carbon particles further benefits the friction behaviour. It is observed that low friction is achieved mostly due to formation of WS2 at ambient temperature, whereas formation of both WS2 and M0S2 significantly decreases the friction of Mo-W-C coating at high temperature. This further indicates importance of combined Mo and W doping over single-metal doping into carbon-based coatings.Isothermal oxidation tests indicate that Mo-W-C coating preserves it's as-deposited graphitic nature up to 500°C, whereas local delamination of DLC coating leads to substrate exposure and loss of its diamond-like structure at the same temperature. Further, thermo-gravimetric tests confirm excellent thermal stability of Mo-W-C coating compared to DLC. Mo-W-C coating resists oxidation up to 800°C and no coating delamination is observed due to retained coating integrity and its strong adhesion with substrate. On the other hand, state-of-the-art DLC coating starts to delaminate beyond 380°C.The test results confirm that Mo-W-C coating sustains high working temperature and simultaneously maintains improved tribological properties during boundary lubricated condition at ambient and high temperature. Thus Mo-W-C coating is a suitable candidate for low friction and high temperature wear resistant applications compared to commercially available state-of-the-art DLC coatings.

  8. Experimental study on structural, optoelectronic and room temperature sensing performance of Nickel doped ZnO based ethanol sensors

    Science.gov (United States)

    Sudha, M.; Radha, S.; Kirubaveni, S.; Kiruthika, R.; Govindaraj, R.; Santhosh, N.

    2018-04-01

    Nano crystalline undoped (1Z) Zinc Oxide (ZnO) and 5, 10 and 15 Wt. % (1ZN, 2ZN and 3ZN) of Nickel doped ZnO based sensors were fabricated using the hydrothermal approach on Fluorine doped Tin Oxide (FTO) glass substrates. X-ray diffraction (XRD) analysis proved the hexagonal Wurtzite structure of ZnO. Parametric variations in terms of dislocation density, bond length, lattice parameters and micro strain with respect to dopant concentration were analysed. The prominent variations in the crystallite size, optical band gap and Photoluminescence peak ratio of devices fabricated was observed. The Field Emission Scanning Electron Microscope (FESEM) images showed a change in diameter and density of the nanorods. The effect of the operating temperature, concentration of ethanol and the different doping levels of sensitivity, response and recovery time were investigated. It was inferred that 376% of sensitivity with a very quick response and recovery time of <5 s and 10 s respectively at 150 °C of 3ZN sensor has better performance compared to other three sensors. Also 3ZN sensor showed improved sensitivity of 114%, even at room temperature with response and recovery time of 35 s and 45 s respectively.

  9. Superior supercapacitors based on nitrogen and sulfur co-doped hierarchical porous carbon: Excellent rate capability and cycle stability

    Science.gov (United States)

    Zhang, Deyi; Han, Mei; Wang, Bing; Li, Yubing; Lei, Longyan; Wang, Kunjie; Wang, Yi; Zhang, Liang; Feng, Huixia

    2017-08-01

    Vastly improving the charge storage capability of supercapacitors without sacrificing their high power density and cycle performance would bring bright application prospect. Herein, we report a nitrogen and sulfur co-doped hierarchical porous carbon (NSHPC) with very superior capacitance performance fabricated by KOH activation of nitrogen and sulfur co-doped ordered mesoporous carbon (NSOMC). A high electrochemical double-layer (EDL) capacitance of 351 F g-1 was observed for the reported NSHPC electrodes, and the capacitance remains at 288 F g-1 even under a large current density of 20 A g-1. Besides the high specific capacitance and outstanding rate capability, symmetrical supercapacitor cell based on the NSHPC electrodes also exhibits an excellent cycling performance with 95.61% capacitance retention after 5000 times charge/discharge cycles. The large surface area caused by KOH activation (2056 m2 g-1) and high utilized surface area owing to the ideal micro/mesopores ratio (2.88), large micropores diameter (1.38 nm) and short opened micropores structure as well as the enhanced surface wettability induced by N and S heteroatoms doping and improved conductivity induced by KOH activation was found to be responsible for the very superior capacitance performance.

  10. High-Performance Doping-Free Hybrid White OLEDs Based on Blue Aggregation-Induced Emission Luminogens.

    Science.gov (United States)

    Liu, Baiquan; Nie, Han; Lin, Gengwei; Hu, Shiben; Gao, Dongyu; Zou, Jianhua; Xu, Miao; Wang, Lei; Zhao, Zujin; Ning, Honglong; Peng, Junbiao; Cao, Yong; Tang, Ben Zhong

    2017-10-04

    Doping-free white organic light-emitting diodes (DF-WOLEDs) have aroused research interest because of their simple properties. However, to achieve doping-free hybrid WOLEDs (DFH-WOLEDs), avoiding aggregation-caused quenching is challenging. Herein, blue luminogens with aggregation-induced emission (AIE) characteristics, for the first time, have been demonstrated to develop DFH-WOLEDs. Unlike previous DFH-WOLEDs, both thin (10 nm) AIE luminogen (AIEgen) can be used for devices, enhancing the flexibility. Two-color devices show (i) pure-white emission, (ii) high CRI (85), and (iii) high efficiency. Particularly, 19.0 lm W 1- is the highest for pure-white DF-WOLEDs, while 35.0 lm W 1- is the best for two-color hybrid WOLEDs with CRI ≥ 80. A three-color DFH-WOLED shows broad color-correlated temperature span (2301-11628 K), (i) the first sunlight-like OLED (2500-8000 K) operating at low voltages, (ii) the broadest span among sunlight-like OLED, and (iii) possesses comparable efficiency with the best doping counterpart. Another three-color DFH-WOLED exhibits CRI > 90 at ≥3000 cd m -2 , (i) the first DF-WOLED with CRI ≥ 90 at high luminances, and (ii) the CRI (92.8) is not only the highest among AIE-based WOLEDs but also the highest among DF-WOLEDs. Such findings may unlock an alternative concept to develop DFH-WOLEDs.

  11. Investigation of doped Perovskite systems RAIO3 using density functional theory based electronic structure and thermoelectric studies

    International Nuclear Information System (INIS)

    Sandeep; Ghimire, M. P.; Thapa, R. K.; Rai, D. P.; Shankar, A

    2016-01-01

    Samarium doping effects on the thermoelectric properties in Eu 1-x Sm x AlO 3 (x=0%, 50%, and 100%) were studied using first principles calculations based thermal transport property measurement. The result indicate that the compound is an intrinsic n-type material. Samarium doping has a positive effect on the overall thermoelectric performance of the Eu 1-x Sm x AlO 3 system, with sharp increase in figure of merit (ZT) observed when x=0, 50 and 100% up to 150K. Compared to x=0 and 100%, the case of x=50% was found to have more positive increment in ZT value suggesting that the doing to have positive effect on figure of merit in Eu 1-x Sm x AlO 3 . Furthermore, all the samples show stable thermoelectric compatibility factors over a broad temperature range from 700 to 1000 K, which could have great benefits for their practical applications. It is concluded that the overall thermoelectric performance of the Eu 1-x Sm x AlO 3 could be highly enhanced using doping techniques. (paper)

  12. Electrochemical Sensor Coating Based on Electrophoretic Deposition of Au-Doped Self-Assembled Nanoparticles.

    Science.gov (United States)

    Zhang, Rongli; Zhu, Ye; Huang, Jing; Xu, Sheng; Luo, Jing; Liu, Xiaoya

    2018-02-14

    The electrophoretic deposition (EPD) of self-assembled nanoparticles (NPs) on the surface of an electrode is a new strategy for preparing sensor coating. By simply changing the deposition conditions, the electrochemical response for an analyte of deposited NPs-based coating can be controlled. This advantage can decrease the difference between different batches of sensor coating and ensure the reproducibility of each sensor. This work investigated the effects of deposition conditions (including deposition voltage, pH value of suspension, and deposition time) on the structure and the electrochemical response for l-tryptophan of sensor coating formed from Au-doped poly(sodium γ-glutamate) with pendant dopamine units nanohybrids (Au/γ-PGA-DA NBs) via the EPD method. The structure and thickness of the deposited sensor coating were measured by atomic force microscopy, which demonstrated that the structure and thickness of coating can be affected by the deposition voltage, the pH value of the suspension, and the deposition time. The responsive current for l-tryptophan of the deposited sensor coating were measured by differential pulse voltammetry, which showed that the responsive current value was affected by the structure and thickness of the deposited coating. These arguments suggested that a rich design-space for tuning the electrochemical response for analyte and a source of variability in the structure of sensor coating can be provided by the deposition conditions. When Au/γ-PGA-DA NBs were deposited on the electrode surface and formed a continuous coating with particle morphology and thinner thickness, the deposited sensor coating exhibited optimal electrochemical response for l-tryptophan.

  13. A Fumonisins Immunosensor Based on Polyanilino-Carbon Nanotubes Doped with Palladium Telluride Quantum Dots

    Science.gov (United States)

    Masikini, Milua; Mailu, Stephen N.; Tsegaye, Abebaw; Njomo, Njagi; Molapo, Kerileng M.; Ikpo, Chinwe O.; Sunday, Christopher Edozie; Rassie, Candice; Wilson, Lindsay; Baker, Priscilla G. L.; Iwuoha, Emmanuel I.

    2015-01-01

    An impedimetric immunosensor for fumonisins was developed based on poly(2,5-dimethoxyaniline)-multi-wall carbon nanotubes doped with palladium telluride quantum dots onto a glassy carbon surface. The composite was assembled by a layer-by-layer method to form a multilayer film of quantum dots (QDs) and poly(2,5-dimethoxyaniline)-multi-wall carbon nanotubes (PDMA-MWCNT). Preparation of the electrochemical immunosensor for fumonisins involved drop-coating of fumonisins antibody onto the composite modified glassy carbon electrode. The electrochemical impedance spectroscopy response of the FB1 immunosensor (GCE/PT-PDMA-MWCNT/anti-Fms-BSA) gave a linear range of 7 to 49 ng L−1 and the corresponding sensitivity and detection limits were 0.0162 kΩ L ng−1 and 0.46 pg L−1, respectively, hence the limit of detection of the GCE/PT-PDMA-MWCNT immunosensor for fumonisins in corn certified material was calculated to be 0.014 and 0.011 ppm for FB1, and FB2 and FB3, respectively. These results are lower than those obtained by ELISA, a provisional maximum tolerable daily intake (PMTDI) for fumonisins (the sum of FB1, FB2, and FB3) established by the Joint FAO/WHO expert committee on food additives and contaminants of 2 μg kg−1 and the maximum level recommended by the U.S. Food and Drug Administration (FDA) for protection of human consumption (2–4 mg L−1). PMID:25558993

  14. A Low-cost Beam Profiler Based On Cerium-doped Silica Fibers

    Science.gov (United States)

    Potkins, David Edward; Braccini, Saverio; Nesteruk, Konrad Pawel; Carzaniga, Tommaso Stefano; Vedda, Anna; Chiodini, Norberto; Timmermans, Jacob; Melanson, Stephane; Dehnel, Morgan Patrick

    A beam profiler called the Universal Beam Monitor (UniBEaM) has been developed by D-Pace Inc. (Canada) and the Albert Einstein Center for Fundamental Physics, Laboratory for High Energy Physics, University of Bern (Switzerland). The device is based on passing 100 to 600 micron cerium-doped optical fibers through a particle beam. Visible scintillation light from the sensor fibers is transmitted over distances of tens of meters to the light sensors with minimal signal loss and no susceptibility to electromagnetic fields. The probe has an insertion length of only 70 mm. The software plots the beam intensity distribution in the horizontal and vertical planes, and calculates the beam location and integrated profile area, which correlates well with total beam current. UniBEaM has a large dynamic range, operating with beam currents of ∼pA to mA, and a large range of particle kinetic energies of ∼keV to GeV, depending on the absorbed power density. Test data are presented for H- beams at 25keV for 500 μA, and H+ beams at 18MeV for 50pA to 10 μA. Maximum absorbed power density of the optical fiber before thermal damage is discussed in relation to dE/dx energy deposition as a function of particle type and kinetic energy. UniBEaM is well suited for a wide variety of beamlines including discovery science applications, radio-pharmaceutical production, hadron therapy, industrial ion beam applications including ion implantation, industrial electron beams, and ion source testing.

  15. Chitin based heteroatom-doped porous carbon as electrode materials for supercapacitors.

    Science.gov (United States)

    Zhou, Jie; Bao, Li; Wu, Shengji; Yang, Wei; Wang, Hui

    2017-10-01

    Chitin biomass has received much attention as an amino-functional polysaccharide precursor for synthesis of carbon materials. Rich nitrogen and oxygen dual-doped porous carbon derived from cicada slough (CS), a renewable biomass mainly composed of chitin, was synthesized and employed as electrode materials for electrochemical capacitors, for the first time ever. The cicada slough-derived carbon (CSC) was prepared by a facile process via pre-carbonization in air, followed by KOH activation. The weight ratio of KOH and char plays an important role in fabricating the microporous structure and tuning the surface chemistry of CSC. The obtained CSC had a large specific surface area (1243-2217m 2 g -1 ), fairly high oxygen content (28.95-33.78 at%) and moderate nitrogen content (1.47-4.35 at%). The electrochemical performance of the CS char and CSC as electrodes for capacitors was evaluated in a three-electrode cell configuration with 6M KOH as the electrolyte. Electrochemical studies showed that the as-prepared CSC activated at the KOH-to-char weight ratio of 2 exhibited the highest specific capacitance (266.5Fg -1 at a current density of 0.5Ag -1 ) and excellent rate capability (196.2Fg -1 remained at 20Ag -1 ) and cycle durability. In addition, the CSC-2-based symmetrical device possessed the desirable energy density and power density of about 15.97Whkg -1 and 5000Wkg -1 at 5Ag -1 , respectively. Copyright © 2017 Elsevier Ltd. All rights reserved.

  16. Isothermal and dynamic oxidation behaviour of Mo-W doped carbon-based coating

    Science.gov (United States)

    Mandal, Paranjayee; Ehiasarian, Arutiun P.; Hovsepian, Papken Eh.

    2015-10-01

    The oxidation behaviour of Mo-W doped carbon-based coating (Mo-W-C) is investigated in elevated temperature (400-1000 °C). Strong metallurgical bond between Mo-W-C coating and substrate prevents any sort of delamination during heat-treatment. Isothermal oxidation tests show initial growth of metal oxides at 500 °C, however graphitic nature of the as-deposited coating is preserved. The oxidation progresses with further rise in temperature and the substrate is eventually exposed at 700 °C. The performance of Mo-W-C coating is compared with a state-of-the-art DLC(Cr/Cr-WC/W:C-H/a:C-H) coating, which shows preliminary oxidation at 400 °C and local delamination of the coating at 500 °C leading to substrate exposure. The graphitisation starts at 400 °C and the diamond-like structure is completely converted into the graphite-like structure at 500 °C. Dynamic oxidation behaviour of both the coatings is investigated using Thermo-gravimetric analysis carried out with a slow heating rate of 1 °C/min from ambient temperature to 1000 °C. Mo-W-C coating resists oxidation up to ˜800 °C whereas delamination of DLC(Cr/Cr-WC/W:C-H/a:C-H) coating is observed beyond ˜380 °C. In summary, Mo-W-C coating provides improved oxidation resistance at elevated temperature compared to DLC(Cr/Cr-WC/W:C-H/a:C-H) coating.

  17. Optical and electrical improvements of semipolar (1 1 −2 2) GaN-based light emitting diodes by Si doping of n-GaN template

    International Nuclear Information System (INIS)

    Lee, Jae-Hwan; Han, Sang-Hyun; Song, Ki-Ryong; Lee, Sung-Nam

    2014-01-01

    Highlights: • In semipolar GaN, Si-doping is effective to reduce out-of plane PSFs toward [1−100]. • Interfacial quality of semipolar QWs was improved by increasing SiH4 flow of n-GaN. • Electrical properties of semipolar GaN were improved by increasing Si doping. • Light output power of semipolar LEDs were increased with SiH4 flow rate of n-type GaN. - Abstract: We report that the performance of semipolar (1 1 −2 2) GaN-based light-emitting diodes (LEDs) was improved by increasing the Si-doping concentration of n-type GaN templates. In-plane and out-of plane high-resolution X-ray diffraction demonstrated that crystal defects such as threading dislocation, partial stacking faults and basal stacking faults, were significantly decreased by increasing the Si-doping concentration. This resulted in the increase of carrier mobility due to reduction of the defect-scattering effect. Furthermore, the quality of InGaN/GaN quantum-well interfaces was improved by increasing the Si-doping concentration of the n-type GaN template. Based on these results, we suggest that the light-output power and operation voltage of semipolar (1 1 −2 2) GaN-based LEDs would be improved by increasing Si doping concentration of n-type GaN templates

  18. Striking the Right Balance : Effectiveness of Anti-Doping Policies

    NARCIS (Netherlands)

    de Hon, O.M.

    2016-01-01

    Doping, and anti-doping, is in the news on a continuous basis. At the core of these stories and discussions is the question how effective anti-doping policies are to curb the use of doping in sports. Anti-doping policies are based on ethical values, a juridical framework, laboratory analyses,

  19. Supercapacitors based on nitrogen-doped reduced graphene oxide and borocarbonitrides

    Science.gov (United States)

    Gopalakrishnan, K.; Moses, Kota; Govindaraj, A.; Rao, C. N. R.

    2013-12-01

    Nitrogen-doped reduced graphene oxide (RGO) samples with different nitrogen content, prepared by two different methods, as well as nitrogen-doped few-layer graphene have been investigated as supercapacitor electrodes. Two electrode measurements have been carried out both in aqueous (6M KOH) and in ionic liquid media. Nitrogen-doped reduced graphene oxides exhibit satisfactory specific capacitance, the values reaching 126F/g at a scan rate of 10mV/s in aqueous medium. Besides providing supercapacitor characteristics, the study has shown the nitrogen content and surface area to be important factors. High surface-area borocarbonitrides, BxCyNz, prepared by the urea route appear to be excellent supercapacitor electrode materials. Thus, BC4.5N exhibits a specific capacitance of 169F/g at a scan rate of 10mV/s in aqueous medium. In an ionic liquid medium, nitrogen-doped RGO and BC4.5N exhibit specific capacitance values of 258F/g and 240F/g at a scan rate of 5mV/s. The ionic liquid enables a larger operating voltage range of 0.0-2.5V compared to 0.0-1V in aqueous medium.

  20. Luminescence of Ce doped oxygen crystalline compounds based on Hf and Ba

    CERN Document Server

    Borisevich, A E; Lecoq, P

    2003-01-01

    The luminescence properties of the Ce-doped hafnium and barium compounds have been investigated to determine their potential as heavy scintillation materials. Compounds have been prepared by solid state synthesis. All of them have shown a bright luminescence attributed to trivalent cerium. Emission bands are peaked in the 425-475nm spectral region at room temperature.

  1. Single-mode biological distributed feedback lasers based on vitamin B2 doped gelatin

    DEFF Research Database (Denmark)

    Vannahme, Christoph; Maier-Flaig, F.; Lemmer, U.

    Biological second-order distributed feedback (DFB) lasers are presented. Riboflavin (vitamin B2) doped gelatin as active material is spin-coated onto nanoimprinted polymer with low refractive index. DFB grating periods of 368 nm and 384 nm yield laser emission at 543 nm and 562 nm, respectively....

  2. Lanthanide-doped nanoparticles as the active optical medium in polymer-based devices

    NARCIS (Netherlands)

    Stouwdam, J.W.

    2004-01-01

    The luminescence of lanthanide ions in organic environment is greatly reduced compared to inorganic materials. This thesis describes the doping of the lanthanide ions in the core of inorganic nanoparticles that are soluble in organic solvents as a way to shield the lanthanide ions from the organic

  3. New Mid-IR Lasers Based on Rare-Earth-Doped Sulfide and Chloride Materials

    International Nuclear Information System (INIS)

    Nostrand, M

    2000-01-01

    Applications in remote-sensing and military countermeasures have driven a need for compact, solid-state mid-IR lasers. Due to multi-phonon quenching, non-traditional hosts are needed to extend current solid-state, room-temperature lasing capabilities beyond ∼ 4 (micro)m. Traditional oxide and fluoride hosts have effective phonon energies in the neighborhood of 1000 cm -1 and 500 cm -1 , respectively. These phonons can effectively quench radiation above 2 and 4 (micro)m, respectively. Materials with lower effective phonon energies such as sulfides and chlorides are the logical candidates for mid-IR (4-10 (micro)m) operation. In this report, laser action is demonstrated in two such hosts, CaGa 2 S 4 and KPb 2 Cl 5 . The CaGa 2 S 4 :Dy 3+ laser operating at 4.3 (micro)m represents the first sulfide laser operating beyond 2 (micro)m. The KPb 2 Cl 5 :Dy 3+ laser operating at 2.4 (micro)m represents the first operation of a chloride-host laser in ambient conditions. Laser action is also reported for CaGa 2 S 4 :Dy 3+ at 2.4 (micro)m, CaGa 2 S 4 :Dy 3+ at 1.4 (micro)m, and KPb 2 Cl 5 :Nd 3+ at 1.06 (micro)m. Both host materials have been fully characterized, including lifetimes, absorption and emission cross sections, radiative branching ratios, and radiative quantum efficiencies. Radiative branching ratios and radiative quantum efficiencies have been determined both by the Judd-Ofelt method (which is based on absorption measurements), and by a novel method described herein which is based on emission measurements. Modeling has been performed to predict laser performance, and a new method to determine emission cross section from slope efficiency and threshold data is developed. With the introduction and laser demonstration of rare-earth-doped CaGa 2 S 4 and KPb 2 Cl 5 , direct generation of mid-IR laser radiation in a solid-state host has been demonstrated. In KPb 2 Cl 5 , predictions indicate that laser operation to 9 (micro)m may be possible, a wavelength previously

  4. Dispersive heterodyne probing method for laser frequency stabilization based on spectral hole burning in rare-earth doped crystals

    DEFF Research Database (Denmark)

    Gobron, Olivier; Jung, K.; Galland, N.

    2017-01-01

    Frequency-locking a laser to a spectral hole in rare-earth doped crystals at cryogenic temperature has been shown to be a promising alternative to the use of high finesse Fabry-Perot cavities when seeking a very high short term stability laser (M. J. Thorpe et al., Nature Photonics 5, 688 (2011......)). We demonstrate here a novel technique for achieving such stabilization, based on generating a heterodyne beat-note between a master laser and a slave laser whose dephasing caused by propagation near a spectral hole generate the error signal of the frequency lock. The master laser is far detuned from...

  5. Airplane dopes and doping

    Science.gov (United States)

    Smith, W H

    1919-01-01

    Cellulose acetate and cellulose nitrate are the important constituents of airplane dopes in use at the present time, but planes were treated with other materials in the experimental stages of flying. The above compounds belong to the class of colloids and are of value because they produce a shrinking action on the fabric when drying out of solution, rendering it drum tight. Other colloids possessing the same property have been proposed and tried. In the first stages of the development of dope, however, shrinkage was not considered. The fabric was treated merely to render it waterproof. The first airplanes constructed were covered with cotton fabric stretched as tightly as possible over the winds, fuselage, etc., and flying was possible only in fine weather. The necessity of an airplane which would fly under all weather conditions at once became apparent. Then followed experiments with rubberized fabrics, fabrics treated with glue rendered insoluble by formaldehyde or bichromate, fabrics treated with drying and nondrying oils, shellac, casein, etc. It was found that fabrics treated as above lost their tension in damp weather, and the oil from the motor penetrated the proofing material and weakened the fabric. For the most part the film of material lacked durability. Cellulose nitrate lacquers, however were found to be more satisfactory under varying weather conditions, added less weight to the planes, and were easily applied. On the other hand, they were highly inflammable, and oil from the motor penetrated the film of cellulose nitrate, causing the tension of the fabric to be relaxed.

  6. Recent Advance of Biological Molecular Imaging Based on Lanthanide-Doped Upconversion-Luminescent Nanomaterials

    Directory of Open Access Journals (Sweden)

    Yuanzeng Min

    2014-02-01

    Full Text Available Lanthanide-doped upconversion-luminescent nanoparticles (UCNPs, which can be excited by near-infrared (NIR laser irradiation to emit multiplex light, have been proven to be very useful for in vitro and in vivo molecular imaging studies. In comparison with the conventionally used down-conversion fluorescence imaging strategies, the NIR light excited luminescence of UCNPs displays high photostability, low cytotoxicity, little background auto-fluorescence, which allows for deep tissue penetration, making them attractive as contrast agents for biomedical imaging applications. In this review, we will mainly focus on the latest development of a new type of lanthanide-doped UCNP material and its main applications for in vitro and in vivo molecular imaging and we will also discuss the challenges and future perspectives.

  7. The magnetoviscous effect of micellar solutions doped with water based ferrofluids

    Energy Technology Data Exchange (ETDEWEB)

    Arantes, Fabiana R., E-mail: farantes@if.usp.br [Institute of Physics, University of Sao Paulo (Brazil); Institute of Fluid Mechanics, Technische Universität Dresden (Germany); Odenbach, Stefan, E-mail: stefan.odenbach@tu-dresden.de [Institute of Fluid Mechanics, Technische Universität Dresden (Germany)

    2015-09-15

    This work presents a magnetorheological study of micellar solutions of potassium laurate and water doped with magnetite nanoparticles, accompanied by auxiliary dynamic light scattering measurements. An increase in the viscosity of the samples under applied field was observed and, furthermore, a considerable magnetoviscous effect was revealed even at magnetic particles' concentrations as low as 0.005–0.01 vol%. This indicates that the rheological behavior of the micelles is changed by the interaction of the magnetic particles with the applied field, leading to different microscopic arrangements in the micellar solutions. - Highlights: • We study the magnetorheological behavior of micellar solutions doped with ferrofluids. • We observe an increase in the viscosity of the samples under an applied field. • We find a large magnetoviscous effect even at low magnetic particles' concentration. • Interaction of particles with the field changes the micelles' rheological behavior.

  8. Enhanced non-enzymatic glucose sensing based on copper nanoparticles decorated nitrogen-doped graphene.

    Science.gov (United States)

    Jiang, Ding; Liu, Qian; Wang, Kun; Qian, Jing; Dong, Xiaoya; Yang, Zhenting; Du, Xiaojiao; Qiu, Baijing

    2014-04-15

    Copper nanoparticles (NPs) decorated nitrogen-doped graphene (Cu-N-G) was prepared by a facile thermal treatment, and further employed as a novel sensing material for fabricating the sensitive non-enzymatic glucose sensor. Compared with pure Cu NPs, the Cu-N-G showed enhanced electrocatalytic activity to glucose oxidation due to the integration of N-G, which exhibited the oxidation peak current of glucose ca. 23-fold higher than that of pure Cu NPs. The presented sensor showed excellent performances for glucose detection including wide linear range of 0.004-4.5 mM, low detection limit (1.3 μM, S/N=3), high sensitivity (48.13 μA mM(-1)), fast response time (doped graphene as enhanced materials in fabricating sensors for chemical and biochemical analysis. © 2013 Published by Elsevier B.V.

  9. Metal Oxides Doped PPY-PVA Blend Thin Films Based Gas Sensor

    Directory of Open Access Journals (Sweden)

    D. B. DUPARE

    2009-02-01

    Full Text Available Synthesis of metal oxides doped polypyrrole–polyvinyl alcohol blend thin films by in situ chemical oxidative polymerization, using microwave oven on glass substrate for development of Ammonia and Trimethyl ammine hazardous gas sensor. The all experimental process carried out at room temperature(304 K. These polymer materials were characterized by Chemical analyses, spectral studies (UV-visible and IR and conductivity measurement by four –probe technique. The surface morphology as observed in the SEM image was observed to be uniformly covering the entire substrate surface. The sensor was used for different concentration (ppm of TMA and Ammonia gas investigation at room temperature (304 k. This study found to possess improved electrical, mechanical and environmental stability metal oxides doped PPY-PVA films.

  10. Preparation and Characterization of Mn/N Co-Doped TiO2 Loaded on Wood-Based Activated Carbon Fiber and Its Visible Light Photodegradation

    Directory of Open Access Journals (Sweden)

    Xiaojun Ma

    2015-09-01

    Full Text Available Using MnSO4·H2O as manganese source and urea as nitrogen source, Mn/N co-doped TiO2 loaded on wood-based activated carbon fiber (Mn/Ti-N-WACF was prepared by sol–gel method. Mn/Ti-N-WACF with different Mn doping contents was characterized by scanning electron microscopy, X-ray diffraction (XRD and X-ray photoelectron spectroscopies (XPS, and ultraviolet-visible spectrophotometer. Results showed that the loading rate of TiO2 in Mn/Ti-N-WACF was improved by Mn/N co-doping. After calcination at 450 °C, the degree of crystallinity of TiO2 was reduced due to Mn/N co-doption in the resulting Mn/Ti-N-WACF samples, but the TiO2 crystal phase was not changed. XPS spectra revealed that some Ti4+ ions from the TiO2 lattice of Mn/Ti-N-WACF system were substituted by doped Mn. Moreover, new bonds formed within N–Ti–N and Ti–N–O because of the doped N that substituted some oxygen atoms in the TiO2 lattice. Notably, the degradation rate of methylene blue for Mn/Ti-N-WACF was improved because of the co-doped Mn/N under visible-light irradiation.

  11. CdS-based p-i-n diodes using indium and copper doped CdS films by pulsed laser deposition

    International Nuclear Information System (INIS)

    Hernandez-Como, N; Berrellez-Reyes, F; Mizquez-Corona, R; Ramirez-Esquivel, O; Mejia, I; Quevedo-Lopez, M

    2015-01-01

    In this work we report a method to dope cadmium sulfide (CdS) thin films using pulsed laser deposition. Doping is achieved during film growth at substrate temperatures of 100 °C by sequential deposition of the CdS and the dopant material. Indium sulfide and copper disulfide targets were used as the dopant sources for n-type and p-type doping, respectively. Film resistivities as low as 0.2 and 1 Ω cm were achieved for indium and copper doped films, respectively. Hall effect measurements demonstrated the change in conductivity type from n-type to p-type when the copper dopants are incorporated into the film. The controlled incorporation of indium or copper, in the undoped CdS film, results in substitutional defects in the CdS, which increases the electron and hole concentration up to 4 × 10 18 cm −3 and 3 × 10 20 cm −3 , respectively. The results observed with CdS doping can be expanded to other chalcogenides material compounds by just selecting different targets. With the optimized doped films, CdS-based p-i-n diodes were fabricated yielding an ideality factor of 4, a saturation current density of 2 × 10 −6 A cm −2 and a rectification ratio of three orders of magnitude at ±3 V. (paper)

  12. Tracking with heavily irradiated silicon detectors operated at cryogenic temperatures

    International Nuclear Information System (INIS)

    Casagrande, L.; Barnett, B.M.; Bartalina, P.

    1999-01-01

    In this work, the authors show that a heavily irradiated double-sided silicon microstrip detector recovers its performance when operated at cryogenic temperatures. A DELPHI microstrip detector, irradiated to a fluence of ∼4 x 10 14 p/cm 2 , no longer operational at room temperature, cannot be distinguished from a non-irradiated one when operated at T < 120 K. Besides confirming the previously observed Lazarus effect in single diodes, these results establish, for the first time, the possibility of using standard silicon detectors for tracking applications in extremely demanding radiation environments

  13. Engineering the switching dynamics of TiO{sub x}-based RRAM with Al doping

    Energy Technology Data Exchange (ETDEWEB)

    Trapatseli, Maria, E-mail: mt3c13@soton.ac.uk; Khiat, Ali; Cortese, Simone; Serb, Alexantrou; Carta, Daniela; Prodromakis, Themistoklis [Nano Group, School of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ (United Kingdom)

    2016-07-14

    Titanium oxide (TiO{sub x}) has attracted a lot of attention as an active material for resistive random access memory (RRAM), due to its versatility and variety of possible crystal phases. Although existing RRAM materials have demonstrated impressive characteristics, like ultra-fast switching and high cycling endurance, this technology still encounters challenges like low yields, large variability of switching characteristics, and ultimately device failure. Electroforming has been often considered responsible for introducing irreversible damage to devices, with high switching voltages contributing to device degradation. In this paper, we have employed Al doping for tuning the resistive switching characteristics of titanium oxide RRAM. The resistive switching threshold voltages of undoped and Al-doped TiO{sub x} thin films were first assessed by conductive atomic force microscopy. The thin films were then transferred in RRAM devices and tested with voltage pulse sweeping, demonstrating that the Al-doped devices could on average form at lower potentials compared to the undoped ones and could support both analog and binary switching at potentials as low as 0.9 V. This work demonstrates a potential pathway for implementing low-power RRAM systems.

  14. Dye-sensitized solar cells based on Cr-doped TiO2 nanotube photoanodes

    Institute of Scientific and Technical Information of China (English)

    M.M.Momeni

    2017-01-01

    The effect of chromium doping on the photovoltaic efficiency of dye-sensitized solar cells (DSSCs) with anodized TiO2 nanotubes followed by an annealing process was investigated.Cr-doped TiO2 nanotubes (CrTNs) with different amounts of chromium were obtained by anodizing of titanium foils in a single-step process using potassium chromate as the chromium source.Film features were investigated by scanning electron microscopy (SEM),X-ray diffraction (XRD),energy-dispersive X-ray spectroscopy (EDX),and ultraviolet-visible (UV-Vis) spectroscopy.It is clearly seen that highly ordered TiO2 nanotubes are formed in an anodizing solution free of potassium chromate,and with a gradual increase in the potassium chromate concentration,these nanotube structures change to nanoporous and compact films without porosity.The photovoltaic efficiencies of fabricated DSSCs were characterized by a solar cell measurement system via the photocurrent-voltage (Ⅰ-Ⅴ) curves.It is found that the photovoltaic efficiency of DSSCs with CrTNsl sample is improved by more than three times compared to that of DSSCs with undoped TNs.The energy conversion efficiency increases from 1.05 % to 3.89 % by doping of chromium.

  15. Thermoelectric study of Ag doped SnSe-Sb2Se3 based alloy

    Science.gov (United States)

    Das, Anish; Talukdar, M.; Kumar, Aparabal; Sarkar, Kalyan Jyoti; Dhama, P.; Banerji, P.

    2018-05-01

    In this article we have synthesized p-type alloy of SnSe and Sb2Se3 (10 atomic %) to study the thermoelectric transport properties. The alloy was prepared by melt grown technique followed by spark plasma sintering and latter doped with 2 atomic % Ag to compensate the carrier density in order to achieve higher electrical conductivity (σ). Out of these, the doped sample resulted in the maximum figure of merit, ZT˜0.7 at 773 K due to the existence of the secondary phase AgSbSe2 and reduced lattice thermal conductivity (0.61 W m-1 K-1 at 300 K). The fitted lattice thermal conductivity shows that point defect and Umklapp scattering are the primary process of phonon scattering for all the samples whereas the fitted mobility data confirms acoustic phonon scattering along with point defect and grain boundary scattering to be the main carrier scattering mechanism. More over room temperature carrier density and electrical conductivity are found to increase for the doped sample which further corroborate (90%)SnSe-(10%)Sb2Se3:2%Ag to be a potential candidate for highly efficient thermoelectric materials.

  16. Electrochemical Decontamination of Painted and Heavily Corroded Metals

    International Nuclear Information System (INIS)

    Marczak, S.; Anderson, J.; Dziewinski, J.

    1998-01-01

    The radioactive metal wastes that are generated from nuclear fuel plants and radiochemical laboratories are mainly contaminated by the surface deposition of radioactive isotopes. There are presently several techniques used in removing surface contamination involving physical and chemical processes. However, there has been very little research done in the area of soiled, heavily oxidized, and painted metals. Researchers at Los Alamos National Laboratory have been developing electrochemical procedures for the decontamination of bare and painted metal objects. These methods have been found to be effective on highly corroded as well as relatively new metals. This study has been successful in decontaminating projectiles and shrapnel excavated during environmental restoration projects after 40+ years of exposure to the elements. Heavily corroded augers used in sampling activities throughout the area were also successfully decontaminated. This process has demonstrated its effectiveness and offers several advantages over the present metal decontamination practices of media blasting and chemical solvents. These advantages include the addition of no toxic or hazardous chemicals, low operating temperature and pressure, and easily scaleable equipment. It is in their future plans to use this process in the decontamination of gloveboxes destined for disposal as TRU waste

  17. Sensitivity Improvement of Ammonia Gas Sensor Based on Poly(3,4-ethylenedioxy thiophene):Poly(styrenesulfonate) by Employing Doping of Bromo cresol Green

    International Nuclear Information System (INIS)

    Aba, L.; Yusuf, Y.; Triyana, K.; Aba, L.; Siswanta, D.

    2014-01-01

    The aim of this research is to improve the sensitivity of ammonia gas sensor (hereafter referred to as sensor) based on poly(3,4-ethylenedioxy thiophene):poly(styrenesulfonate) (PEDOT:PSS) by employing the doping dye of bromo cresol green (BCG). The doping process was carried out by mixing the BCG and the PEDOT:PSS in a solution with an optimum ratio of 1:1 in volume. The sensor was fabricated by using spin-coating technique followed by annealing process. For comparison, the BCG thin film and the PEDOT:PSS thin film were also deposited with the same method on glass substrates. For optical characterization, a red-light laser diode with a 650 nm wavelength was used as light source. Under illumination with the laser diode, the bare glass substrate and BCG film showed no absorption. The sensor exhibited linear response to ammonia gas for the range of 200 ppm to 800 ppm. It increased the sensitivity of sensor based on PEDOT:PSS with BCG doping being about twofold higher compared to that of without BCG doping. Furthermore, the response time and the recovery time of the sensor were found very fast. It suggests that the optical sensor based on BCG-doped PEDOT:PSS is promising for application as ammonia gas sensor.

  18. Synthesis, characterization and gas sensing properties of undoped and Zn-doped γ-Fe2O3-based gas sensors

    International Nuclear Information System (INIS)

    Jing Zhihong

    2006-01-01

    In this study, undoped and Zn-doped γ-Fe 2 O 3 nanopowders have been prepared using Fe(NO 3 ) 3 .9H 2 O and Zn(NO 3 ) 2 .6H 2 O as starting materials and lauryl alcohol as anhydrous medium. Thermo-gravimetric analysis (TGA), differential thermal analysis (DTA), X-ray diffraction (XRD) and transmission electron micrograph (TEM) were employed to characterize the products. Sensitivity characteristics of the undoped and Zn-doped γ-Fe 2 O 3 semiconductor gas sensors have been investigated. The results show that both of the undoped and 15 mol% Zn-doped γ-Fe 2 O 3 -based gas sensors present good sensitivity and selectivity to acetone and ethanol in presence of CH 4 , H 2 and CO at the operating temperatures of 240 and 270 deg. C, respectively. After being doped with 15 mol% Zn addition, the γ-Fe 2 O 3 -based gas element displays higher sensitivity and selectivity as well as shorter response-recovery time compared with the undoped, suggesting that the promoting effect of ZnO is excellent. So, it seems that the γ-Fe 2 O 3 -based gas sensor doped with 15 mol% Zn is expected to be a promising sensor for detecting acetone and ethanol

  19. To dope or not to dope

    DEFF Research Database (Denmark)

    Overbye, Marie Birch; Knudsen, Mette Lykke; Pfister, Gertrud Ursula

    2013-01-01

    tAim: This study aims to examine the circumstances which athletes say affect their (hypothetical) consid-erations of whether to dope or not and explore the differences between athletes of different gender, ageand sport type.Methods: 645 elite athletes (mean age: 22.12; response rate: 43%) represe......tAim: This study aims to examine the circumstances which athletes say affect their (hypothetical) consid-erations of whether to dope or not and explore the differences between athletes of different gender, ageand sport type.Methods: 645 elite athletes (mean age: 22.12; response rate: 43......%) representing 40 sports completed aweb-based questionnaire. Participants were asked to imagine themselves in a situation in which theyhad to decide whether to dope or not to dope and then evaluate how different circumstances would affecttheir decisions.Results: Multiple circumstances had an effect on athletes......’ hypothetical decisions. The most effective deter-rents were related to legal and social sanctions, side-effects and moral considerations. Female athletesand younger athletes evaluated more reasons as deterrents than older, male athletes. When confrontedwith incentives to dope, the type of sport was often...

  20. Performance optimization of MOS-like carbon nanotube-FETs with realistic source/drain contacts based on electrostatic doping

    Energy Technology Data Exchange (ETDEWEB)

    Zhou Hailiang; Zhang Minxuan [School of Computer, National University of Defense Technology, Changsha 410073 (China); Hao Yue, E-mail: hlzhou@nudt.edu.cn [School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2010-12-15

    Due to carrier band-to-band-tunneling (BTBT) through channel-source/drain contacts, conventional MOS-like Carbon Nanotube Field Effect Transistors (C-CNFETs) suffer from ambipolar conductance, which deteriorates the device performance greatly. In order to reduce such ambipolar behavior, a novel device structure based on electrostatic doping is proposed and all kinds of source/drain contacting conditions are considered in this paper. The non-equilibrium Green's function (NEGF) formalism based simulation results show that, with proper choice of tuning voltage, such electrostatic doping strategy can not only reduce the ambipolar conductance but also improve the sub-threshold performance, even with source/drain contacts being of Schottky type. And these are both quite desirable in circuit design to reduce the system power and improve the frequency as well. Further study reveals that the performance of the proposed design depends strongly on the choice of tuning voltage value, which should be paid much attention to obtain a proper trade-off between power and speed in application. (semiconductor devices)

  1. Performance optimization of MOS-like carbon nanotube-FETs with realistic source/drain contacts based on electrostatic doping

    International Nuclear Information System (INIS)

    Zhou Hailiang; Zhang Minxuan; Hao Yue

    2010-01-01

    Due to carrier band-to-band-tunneling (BTBT) through channel-source/drain contacts, conventional MOS-like Carbon Nanotube Field Effect Transistors (C-CNFETs) suffer from ambipolar conductance, which deteriorates the device performance greatly. In order to reduce such ambipolar behavior, a novel device structure based on electrostatic doping is proposed and all kinds of source/drain contacting conditions are considered in this paper. The non-equilibrium Green's function (NEGF) formalism based simulation results show that, with proper choice of tuning voltage, such electrostatic doping strategy can not only reduce the ambipolar conductance but also improve the sub-threshold performance, even with source/drain contacts being of Schottky type. And these are both quite desirable in circuit design to reduce the system power and improve the frequency as well. Further study reveals that the performance of the proposed design depends strongly on the choice of tuning voltage value, which should be paid much attention to obtain a proper trade-off between power and speed in application. (semiconductor devices)

  2. Electrochemical reduction induced self-doping of Ti3+ for efficient water splitting performance on TiO2 based photoelectrodes

    KAUST Repository

    Zhang, Zhonghai

    2013-01-01

    Hetero-element doping (e.g., N, F, C) of TiO2 is inevitably accompanied by significantly increased structural defects due to the dopants\\' nature being foreign impurities. Very recently, in situ self-doping with homo-species (e.g., Ti3+) has been emerging as a rational solution to enhance TiO2 photoactivity within both UV and visible light regions. Herein we demonstrate that conventional electrochemical reduction is indeed a facile and effective strategy to induce in situ self-doping of Ti3+ into TiO2 and the self-doped TiO2 photoelectrodes showed remarkably improved and very stable water splitting performance. In this study, hierarchical TiO2 nanotube arrays (TiO2 NTs) were chosen as TiO2 substrates and then electrochemically reduced under varying conditions to produce Ti3+ self-doped TiO2 NTs (ECR-TiO2 NTs). The optimized saturation photocurrent density and photoconversion efficiency on the ECR-TiO2 NTs under simulated AM 1.5G illumination were identified to be 2.8 mA cm-2 at 1.23 V vs. RHE and 1.27% respectively, which are the highest values ever reported for TiO 2 based photoelectrodes. The electrochemical impedance spectra measurement confirms that the electrochemical induced Ti3+ self-doping improved the electrical conductivity of the ECR-TiO2 NTs. The versatility and effectiveness of the electrochemical reduction method for Ti3+ self-doping in P25 based TiO2 was also examined and confirmed. This journal is © 2013 the Owner Societies.

  3. Remote Water Temperature Measurements Based on Brillouin Scattering with a Frequency Doubled Pulsed Yb:doped Fiber Amplifier

    Directory of Open Access Journals (Sweden)

    Thomas Walther

    2008-09-01

    Full Text Available Temperature profiles of the ocean are of interest for weather forecasts, climate studies and oceanography in general. Currently, mostly in situ techniques such as fixed buoys or bathythermographs deliver oceanic temperature profiles. A LIDAR method based on Brillouin scattering is an attractive alternative for remote sensing of such water temperature profiles. It makes it possible to deliver cost-effective on-line data covering an extended region of the ocean. The temperature measurement is based on spontaneous Brillouin scattering in water. In this contribution, we present the first water temperature measurements using a Yb:doped pulsed fiber amplifier. The fiber amplifier is a custom designed device which can be operated in a vibrational environment while emitting narrow bandwidth laser pulses. The device shows promising performance and demonstrates the feasibility of this approach. Furthermore, the current status of the receiver is briefly discussed; it is based on an excited state Faraday anomalous dispersion optical filter.

  4. Fabrication of hydrogen peroxide biosensor based on Ni doped SnO2 nanoparticles.

    Science.gov (United States)

    Lavanya, N; Radhakrishnan, S; Sekar, C

    2012-01-01

    Ni doped SnO(2) nanoparticles (0-5 wt%) have been prepared by a simple microwave irradiation (2.45 GHz) method. Powder X-ray diffraction (XRD) and transmission electron microscopy (TEM) studies confirmed the formation of rutile structure with space group (P(42)/mnm) and nanocrystalline nature of the products with spherical morphology. Direct electrochemistry of horseradish peroxidase (HRP)/nano-SnO(2) composite has been studied. The immobilized enzyme retained its bioactivity, exhibited a surface confined, reversible one-proton and one-electron transfer reaction, and had good stability, activity and a fast heterogeneous electron transfer rate. A significant enzyme loading (3.374×10(-10) mol cm(-2)) has been obtained on nano-Ni doped SnO(2) as compared to the bare glassy carbon (GC) and nano-SnO(2) modified surfaces. This HRP/nano-Ni-SnO(2) film has been used for sensitive detection of H(2)O(2) by differential pulse voltammetry (DPV), which exhibited a wider linearity range from 1.0×10(-7) to 3.0×10(-4)M (R=0.9897) with a detection limit of 43 nM. The apparent Michaelis-Menten constant (K(M)(app)) of HRP on the nano-Ni-SnO(2) was estimated as 0.221 mM. This excellent performance of the fabricated biosensor is attributed to large surface-to-volume ratio and Ni doping into SnO(2) which facilitate the direct electron transfer between the redox enzyme and the surface of electrode. Copyright © 2012 Elsevier B.V. All rights reserved.

  5. A polymerase chain reaction-based methodology to detect gene doping.

    Science.gov (United States)

    Carter, Adam; Flueck, Martin

    2012-04-01

    The non-therapeutic use of genes to enhance athletic performance (gene doping) is a novel threat to the world of sports. Skeletal muscle is a prime target of gene therapy and we asked whether we can develop a test system to produce and detect gene doping. Towards this end, we introduced a plasmid (pCMV-FAK, 3.8 kb, 50 μg) for constitutive expression of the chicken homologue for the regulator of muscle growth, focal adhesion kinase (FAK), via gene electro transfer in the anti-gravitational muscle, m. soleus, or gastrocnemius medialis of rats. Activation of hypertrophy signalling was monitored by assessing the ribosomal kinase p70S6K and muscle fibre cross section. Detectability of the introduced plasmid was monitored with polymerase chain reaction in deoxyribonucleic acids (DNA) from transfected muscle and serum. Muscle transfection with pCMV-FAK elevated FAK expression 7- and 73-fold, respectively, and increased mean cross section by 52 and 16% in targeted muscle fibres of soleus and gastrocnemius muscle 7 days after gene electro transfer. Concomitantly p70S6K content was increased in transfected soleus muscle (+110%). Detection of the exogenous plasmid sequence was possible in DNA and cDNA of muscle until 7 days after transfection, but not in serum except close to the site of plasmid deposition, 1 h after injection and surgery. The findings suggest that the reliable detection of gene doping in the immoral athlete is not possible unless a change in the current practice of tissue sampling is applied involving the collection of muscle biopsy close to the site of gene injection.

  6. Heterogeneous anion conducting membranes based on linear and crosslinked KOH doped polybenzimidazole for alkaline water electrolysis

    DEFF Research Database (Denmark)

    Aili, David; Hansen, Martin Kalmar; Renzaho, Richard Fulgence

    2013-01-01

    Polybenzimidazole is a highly hygroscopic polymer that can be doped with aqueous KOH to give a material with high ion conductivity in the 10−2Scm−1 range, which in combination with its low gas permeability makes it an interesting electrolyte material for alkaline water electrolysis. In this study...... on their linear counterpart. The technical feasibility of the membranes was evaluated by the preliminary water electrolysis tests showing performance comparable to that of commercially available cell separators with great potential of further improvement....

  7. High transmittance optical films based on quantum dot doped nanoscale polymer dispersed liquid crystals

    Science.gov (United States)

    Gandhi, Sahil Sandesh; Chien, Liang-Chy

    2016-04-01

    We propose a simple way to fabricate highly transparent nanoscale polymer dispersed liquid crystal (nano-PDLC) films between glass substrates and investigate their incident angle dependent optical transmittance properties with both collimated and Lambertian intensity distribution light sources. We also demonstrate that doping nano-PDLC films with 0.1% InP/ZnS core/shell quantum dots (QD) results in a higher optical transmittance. This work lays the foundation for such nanostructured composites to potentially serve as roll-to-roll coatable light extraction or brightness enhancement films in emissive display applications, superior to complex nanocorrugation techniques proposed in the past.

  8. Long-Life Lithium-Sulfur Battery Derived from Nori-Based Nitrogen and Oxygen Dual-Doped 3D Hierarchical Biochar.

    Science.gov (United States)

    Wu, Xian; Fan, Lishuang; Wang, Maoxu; Cheng, Junhan; Wu, Hexian; Guan, Bin; Zhang, Naiqing; Sun, Kening

    2017-06-07

    Due to restrictions on the low conductivity of sulfur and soluble polysulfides during discharge, lithium sulfur batteries are unsuitable for further large scale applications. The current carbon based cathodes suffer from poor cycle stability and high cost. Recently, heteroatom doped carbons have been considered as a settlement to enhance the performance of lithium sulfur batteries. With this strategy, we report the low cost activated nori based N,O-doped 3D hierarchical carbon material (ANC) as a sulfur host. The N,O dual-doped ANC reveals an elevated electrochemical performance, which exhibits not only a good rate performance over 5 C, but also a high sulfur content of 81.2%. Further importantly, the ANC represents an excellent cycling stability, the cathode reserves a capacity of 618 mAh/g at 2 C after 1000 cycles, which shows a 0.022% capacity decay per cycle.

  9. Application of Surfactant Micellar Solutions as Extractants and Mobile Phases for TLC-Determination of Purine Bases and Doping Agents in Biological Liquids

    Directory of Open Access Journals (Sweden)

    Daria Victorovna Yedamenko

    2015-04-01

    Full Text Available Separation of caffeine and its metabolites (theophylline and theobromine and doping agents (spironolactone, propranolol, and ephedrine and determination of caffeine in serum sample and propranolol and ephedrine in urine were studied on normal-phase thin layers (“Sorbfil-UV-254”. Aqueous organic solvents and aqueous micellar surfactant solutions were compared as the mobile phases for separation. The acceptable separation of purine bases and doping agents was achieved by micellar Thin Layer Chromatography and normal-phase Thin Layer Chromatography. Anionic surfactant solution with added 1-propanol was the best eluent as for caffeine, theophylline, and theobromine separation, as for doping agents. The best characteristics of caffeine extraction from serum, and propranolol and ephedrine from urine were achieved when micellar eluent based on non-ionic Tween-80 surfactant was used. DOI: http://dx.doi.org/10.17807/orbital.v7i1.632

  10. Genetic doping and health damages.

    Science.gov (United States)

    Fallahi, Aa; Ravasi, Aa; Farhud, Dd

    2011-01-01

    Use of genetic doping or gene transfer technology will be the newest and the lethal method of doping in future and have some unpleasant consequences for sports, athletes, and outcomes of competitions. The World Anti-Doping Agency (WADA) defines genetic doping as "the non-therapeutic use of genes, genetic elements, and/or cells that have the capacity to enhance athletic performance ". The purpose of this review is to consider genetic doping, health damages and risks of new genes if delivered in athletes. This review, which is carried out by reviewing relevant publications, is primarily based on the journals available in GOOGLE, ELSEVIER, PUBMED in fields of genetic technology, and health using a combination of keywords (e.g., genetic doping, genes, exercise, performance, athletes) until July 2010. There are several genes related to sport performance and if they are used, they will have health risks and sever damages such as cancer, autoimmunization, and heart attack.

  11. Highly sensitive fiber-optic oxygen sensor based on palladium tetrakis (4-carboxyphenyl)porphyrin doped in ormosil

    International Nuclear Information System (INIS)

    Chu, Cheng-Shane; Chuang, Chih-Yung

    2014-01-01

    A simple, low-cost technique for fabrication of highly sensitive fiber-optic oxygen sensor is described. An organically modified silicate (ORMOSIL) as a matrix for the fabrication of oxygen sensing film was produced. The technique is based on coating the end of a plastic optical fiber with ormosil composite xerogel film sequestered with luminophore palladium (II) meso-tetra(4-carboxyphenyl)porphyrin (PdTCPP) prepared by a sol–gel process. The composite xerogel studied is tetraethylorthosilane (TEOS)/n-octyltriethoxysilane (Octyl-triEOS). Result shows that, expect for PdTCPP-doped TEOS/Octyl-triEOS composite xerogel show the high sensitivity and linear Stern–Volmer relationship which indicate the homogenous environment of the luminophore. The sensitivity of the optical oxygen sensor is quantified in terms of the ratio I N2 /I O2 , where I N2 and I O2 represent the detected fluorescence intensities in pure nitrogen and pure oxygen environments, respectively. The experimental result reveals that the PdTCPP-doped TEOS/Octyl-triEOS oxygen sensor has sensitivity of 153. - Highlights: • A simple, low-cost technique for fabrication of highly sensitive fiber-optic oxygen sensor is described. • ORMOSIL was produced to serve as a matrix for the fabrication of oxygen sensing film. • The fiber-optic oxygen sensor has sensitivity of I N2 /I 100O2 =153. • The stable and reproducible signals were obtained with the fiber-optic oxygen sensor

  12. Few-Layer WSe2 Schottky Junction-Based Photovoltaic Devices through Site-Selective Dual Doping.

    Science.gov (United States)

    Ko, Seungpil; Na, Junhong; Moon, Young-Sun; Zschieschang, Ute; Acharya, Rachana; Klauk, Hagen; Kim, Gyu-Tae; Burghard, Marko; Kern, Klaus

    2017-12-13

    Ultrathin sheets of two-dimensional (2D) materials like transition metal dichalcogenides have attracted strong attention as components of high-performance light-harvesting devices. Here, we report the implementation of Schottky junction-based photovoltaic devices through site-selective surface doping of few-layer WSe 2 in lateral contact configuration. Specifically, whereas the drain region is covered by a strong molecular p-type dopant (NDP-9) to achieve an Ohmic contact, the source region is coated with an Al 2 O 3 layer, which causes local n-type doping and correspondingly an increase of the Schottky barrier at the contact. By scanning photocurrent microscopy using green laser light, it could be confirmed that photocurent generation is restricted to the region around the source contact. The local photoinduced charge separation is associated with a photoresponsivity of up to 20 mA W -1 and an external quantum efficiency of up to 1.3%. The demonstrated device concept should be easily transferrable to other van der Waals 2D materials.

  13. Pd-Doped SnO2-Based Sensor Detecting Characteristic Fault Hydrocarbon Gases in Transformer Oil

    Directory of Open Access Journals (Sweden)

    Weigen Chen

    2013-01-01

    Full Text Available Methane (CH4, ethane (C2H6, ethylene (C2H4, and acetylene (C2C2 are important fault characteristic hydrocarbon gases dissolved in power transformer oil. Online monitoring these gaseous components and their generation rates can present the operational state of power transformer timely and effectively. Gas sensing technology is the most sticky and tricky point in online monitoring system. In this paper, pure and Pd-doped SnO2 nanoparticles were synthesized by hydrothermal method and characterized by X-ray powder diffraction, field-emission scanning electron microscopy, and energy dispersive X-ray spectroscopy, respectively. The gas sensors were fabricated by side-heated preparation, and their gas sensing properties against CH4, C2H6, C2H4, and C2H2 were measured. Pd doping increases the electric conductance of the prepared SnO2 sensors and improves their gas sensing performances to hydrocarbon gases. In addition based on the frontier molecular orbital theory, the highest occupied molecular orbital energy and the lowest unoccupied molecular orbital energy were calculated. Calculation results demonstrate that C2H4 has the highest occupied molecular orbital energy among CH4, C2H6, C2H4, and C2H2, which promotes charge transfer in gas sensing process, and SnO2 surfaces capture a relatively larger amount of electric charge from adsorbed C2H4.

  14. Friction and wear behaviour of Mo–W doped carbon-based coating during boundary lubricated sliding

    International Nuclear Information System (INIS)

    Hovsepian, Papken Eh.; Mandal, Paranjayee; Ehiasarian, Arutiun P.; Sáfrán, G.; Tietema, R.; Doerwald, D.

    2016-01-01

    Graphical abstract: - Highlights: • Novel Mo–W–C coating provides extremely low friction (μ ∼ 0.03) in lubricated condition. • Mo–W–C outperforms existing DLCs in terms of low friction, independent of temperature. • Tribochemical reactions govern the wear mechanism of Mo–W–C coating. • The transfer layer contains graphitic carbon and ‘in situ’ formed WS 2 and MoS 2 . • WS 2 and MoS 2 are the key factors facilitating appreciably low friction and wear rate. - Abstract: A molybdenum and tungsten doped carbon-based coating (Mo–W–C) was developed in order to provide low friction in boundary lubricated sliding condition at ambient and at high temperature. The Mo–W–C coating showed the lowest friction coefficient among a number of commercially available state-of-the-art DLC coatings at ambient temperature. At elevated temperature (200 °C), Mo–W–C coating showed a significant reduction in friction coefficient with sliding distance in contrast to DLC coatings. Raman spectroscopy revealed the importance of combined Mo and W doping for achieving low friction at both ambient and high temperature. The significant decrease in friction and wear rate was attributed to the presence of graphitic carbon debris (from coating) and ‘in situ’ formed metal sulphides (WS 2 and MoS 2 , where metals were supplied from coating and sulphur from engine oil) in the transfer layer.

  15. Friction and wear behaviour of Mo–W doped carbon-based coating during boundary lubricated sliding

    Energy Technology Data Exchange (ETDEWEB)

    Hovsepian, Papken Eh., E-mail: p.hovsepian@shu.ac.uk [Nanotechnology Centre for PVD Research, HIPIMS Research Centre, Sheffield Hallam University, City Campus, Howard Street, Sheffield S1 1WB (United Kingdom); Mandal, Paranjayee, E-mail: 200712mum@gmail.com [Nanotechnology Centre for PVD Research, HIPIMS Research Centre, Sheffield Hallam University, City Campus, Howard Street, Sheffield S1 1WB (United Kingdom); Ehiasarian, Arutiun P., E-mail: a.ehiasarian@shu.ac.uk [Nanotechnology Centre for PVD Research, HIPIMS Research Centre, Sheffield Hallam University, City Campus, Howard Street, Sheffield S1 1WB (United Kingdom); Sáfrán, G., E-mail: safran.gyorgy@ttk.mta.hu [Institute for Technical Physics and Materials Science, Centre for Energy Research, Hungarian Academy of Sciences, H-1121 Budapest, Konkoly-Thegeut 29-33 (Hungary); Tietema, R., E-mail: rtietema@hauzer.nl [IHI Hauzer Techno Coating B.V., Van Heemskerckweg 22, 5928 LL Venlo (Netherlands); Doerwald, D., E-mail: ddoerwald@hauzer.nl [IHI Hauzer Techno Coating B.V., Van Heemskerckweg 22, 5928 LL Venlo (Netherlands)

    2016-03-15

    Graphical abstract: - Highlights: • Novel Mo–W–C coating provides extremely low friction (μ ∼ 0.03) in lubricated condition. • Mo–W–C outperforms existing DLCs in terms of low friction, independent of temperature. • Tribochemical reactions govern the wear mechanism of Mo–W–C coating. • The transfer layer contains graphitic carbon and ‘in situ’ formed WS{sub 2} and MoS{sub 2}. • WS{sub 2} and MoS{sub 2} are the key factors facilitating appreciably low friction and wear rate. - Abstract: A molybdenum and tungsten doped carbon-based coating (Mo–W–C) was developed in order to provide low friction in boundary lubricated sliding condition at ambient and at high temperature. The Mo–W–C coating showed the lowest friction coefficient among a number of commercially available state-of-the-art DLC coatings at ambient temperature. At elevated temperature (200 °C), Mo–W–C coating showed a significant reduction in friction coefficient with sliding distance in contrast to DLC coatings. Raman spectroscopy revealed the importance of combined Mo and W doping for achieving low friction at both ambient and high temperature. The significant decrease in friction and wear rate was attributed to the presence of graphitic carbon debris (from coating) and ‘in situ’ formed metal sulphides (WS{sub 2} and MoS{sub 2}, where metals were supplied from coating and sulphur from engine oil) in the transfer layer.

  16. Quantum dot based on tin/titanium mixed oxide doped with europium synthesized by protein sol-gel method

    International Nuclear Information System (INIS)

    Paganini, Paula P.; Felinto, Maria Claudia F.C.; Brito, Hermi F.

    2011-01-01

    Special luminescence biomarkers have been developed to find more sensitive fluoroimmunoassay methods. A new generation of these biomarkers is the semiconductors nanocrystals, known as quantum dots, doped with lanthanides. The use of lanthanides ions as luminescent markers has many advantages, for example a security method, low cost, high specificity and also the luminescence can be promptly measured with high sensibility and accuracy. The protein sol-gel is a modification of conventional method, in which the coconut water replacing the alkoxides normally used. The advantage is that, the proteins present in coconut water bind chemically with metal salts forming a polymer chain. This work presents nanoparticles based on tin/titanium mixed oxide doped with 3% of europium synthesized by protein sol-gel method. The nanoparticles were burned at 300 deg C, 500 deg C, 800 deg C and 1100 deg C. The samples were analyzed and characterized by thermal analysis, X-ray powder diffraction (XRD), infrared spectroscopy (IR) and scanning electron microscopy (SEM). The synthesis was effective and the nanoparticles showed nanometric size and structural differences with the annealing. To be used in the fluoroimmunoassays tests, these particles need to be functionalized before be connect with biological molecules and after this process, these nanoparticles going to be submitted at gamma radiation for sterilization. (author)

  17. Quantum dot based on tin/titanium mixed oxide doped with europium synthesized by protein sol-gel method

    Energy Technology Data Exchange (ETDEWEB)

    Paganini, Paula P.; Felinto, Maria Claudia F.C., E-mail: paulapaganini@usp.b, E-mail: mfelinto@ipen.b [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil); Brito, Hermi F., E-mail: hefbrito@iq.usp.b [Universidade de Sao Paulo (IQ/USP), Sao Paulo, SP (Brazil). Inst. de Quimica. Lab. de Elementos do Bloco f

    2011-07-01

    Special luminescence biomarkers have been developed to find more sensitive fluoroimmunoassay methods. A new generation of these biomarkers is the semiconductors nanocrystals, known as quantum dots, doped with lanthanides. The use of lanthanides ions as luminescent markers has many advantages, for example a security method, low cost, high specificity and also the luminescence can be promptly measured with high sensibility and accuracy. The protein sol-gel is a modification of conventional method, in which the coconut water replacing the alkoxides normally used. The advantage is that, the proteins present in coconut water bind chemically with metal salts forming a polymer chain. This work presents nanoparticles based on tin/titanium mixed oxide doped with 3% of europium synthesized by protein sol-gel method. The nanoparticles were burned at 300 deg C, 500 deg C, 800 deg C and 1100 deg C. The samples were analyzed and characterized by thermal analysis, X-ray powder diffraction (XRD), infrared spectroscopy (IR) and scanning electron microscopy (SEM). The synthesis was effective and the nanoparticles showed nanometric size and structural differences with the annealing. To be used in the fluoroimmunoassays tests, these particles need to be functionalized before be connect with biological molecules and after this process, these nanoparticles going to be submitted at gamma radiation for sterilization. (author)

  18. Synthesis and characterization of three-dimensional transition metal ions doped zinc oxide based dilute magnetic semiconductor thin films

    Science.gov (United States)

    Samanta, Kousik

    Dilute magnetic semiconductors (DMS), especially 3d-transition metal (TM) doped ZnO based DMS materials are the most promising candidates for optoelectronics and spintronics applications; e.g. in spin light emitting diode (SLED), spin transistors, and spin field effect transistors (SFET), etc. In the present dissertation, thin films of Zn1-xTMxO (TM = Co2+, Cu2+, and Mn2+) were grown on (0001) oriented Al2O3 substrates by pulsed laser deposition (PLD) technique. The films were highly c-axis oriented, nearly single crystalline, and defects free for a limited concentration of the dilution of transition metal ions. In particular, we have obtained single crystalline phases of Zn1-xTMxO thin films for up to 10, 3, and 5 stoichiometric percentages of Co2+, Cu2+, and Mn2+ respectively. Raman micro-probe system was used to understand the structural and lattice dynamical properties at different physical conditions. The confinement of optical phonons in the disorder lattice was explained by alloy potential fluctuation (APF) using a spatial correlation (SC) model. The detailed analysis of the optical phonon behavior in disorder lattice confirmed the substitution of the transition metal ions in Zn 2+ site of the ZnO host lattice. The secondary phases of ZnCo 2O4, CuO, and ZnMn2O4 were detected in higher Co, Cu, and Mn doped ZnO thin films respectively; where as, XRD did not detect these secondary phases in the same samples. Room temperature ferromagnetism was observed in Co2+ and Cu2+ ions doped ZnO thin films with maximum saturation magnetization (Ms) of 1.0 and 0.76 muB respectively. The origin of the observed ferromagnetism in Zn1-xCoxO thin films was tested by the controlled introduction of shallow donors (Al) in Zn0.9-x Co0.1O:Alx (x = 0.005 and 0.01) thin films. The saturation magnetization for the 10% Co-doped ZnO (1.0 muB /Co) at 300K reduced (˜0.25 muB/Co) due to Al doping. The observed ferromagnetism and the reduction due to Al doping can be explained by the Bound

  19. Electronic correlations in hole- and electron-doped Fe-based superconductors

    Science.gov (United States)

    Hardy, Frederic; Boehmer, Anna; Schweiss, Peter; Wolf, Thomas; Heid, Rolf; Eder, Robert; Fisher, Robert A.; Meingast, Christoph

    2015-03-01

    High-temperature superconductivity in the cuprates occurs at the crossover from a highly-correlated Mott insulating state to a weaker correlated Fermi liquid as a function of hole doping. The iron pnictides were initially thought to be fairly weakly correlated. However, we have recently shown using transport and thermodynamic measurements that KFe2As2 is strongly correlated. Both the Sommerfeld coefficient and the Pauli susceptibility are strongly enhanced with respect to their bare DFT values. These correlations are even further enhanced in RbFe2As2andCsFe2As2. The temperature dependence of both the susceptibility and the thermal expansion provides strong experimental evidence for the existence of a coherence-incoherence crossover; similar to what is found in heavy-fermion compounds. Whereas the correlations in the cuprates result from a large value of the Hubbard U, recent works have stressed the particular relevance of Hund's coupling in the pnictides. Our data may be interpreted in terms of a close proximity of KFe2As2 to an orbital-selective Mott transition. We now have good thermodynamic data covering both the hole and electron sides of the BaFe2As2 system and we will discuss how these correlations are modified by doping.

  20. A Humidity Sensor Based on Nb-doped Nanoporous TiO2 Thin Film

    Directory of Open Access Journals (Sweden)

    Mansoor Anbia

    2011-11-01

    Full Text Available The humidity sensing properties of the sensor fabricated from Nb-doped nanoporous TiO2 by screen-printing on the alumina substrate with Ag-Pd interdigital electrodes have been investigated. The nanoporous thin film has been prepared by sol-gel technique. The product has been characterized by X-ray diffraction and scanning electron microscopy to analyze the structure and its morphology. It is found that the impedance of this sensor changes more than four orders of magnitude in the relative humidity (RH range of 11–95 % at 25 °C. The response and recovery time of the sensor are about 19 and 25 s, respectively, during the RH variation from 11 to 95 %. The sensor shows high humidity sensitivity, rapid response and recovery, prominent stability, good repeatability and narrow hysteresis loop. These results indicate that Nb-doped nanoporous TiO2 thin films have a great potential for humidity sensing applications in room temperature operations.

  1. Fluorescent chemosensor for pyridine based on N-doped carbon dots.

    Science.gov (United States)

    Campos, B B; Abellán, C; Zougagh, M; Jimenez-Jimenez, J; Rodríguez-Castellón, E; Esteves da Silva, J C G; Ríos, A; Algarra, M

    2015-11-15

    Fluorescent carbon dots (CDs) and its nitrogen doped (N-CDs) nanoparticles have been synthesized from lactose as precursor using a bottom-up hydrothermal methodology. The synthesized nanoparticles have been characterized by elemental analysis, FTIR, Raman, TEM, DLS, XPS, and steady-state and life-time fluorescence. The synthesized carbon nanoparticles, CDs and N-CDs, have a size at about 7.7±2.4 and 50±15nm, respectively, and quantum yields of 8% (CDs) and 11% (N-CDs). These techniques demonstrated the effectiveness of the synthesis procedure and the functionalization of the CDs surface with amine and amide groups in the presence of NH3 in aqueous media. The effect of excitation wavelength and pH on the luminescent properties was studied. Under the optimal conditions, the nitrogen doped nanoparticles can be used as pyridine sensor in aqueous media because they show an enhancement of its fluorescence with a good linear relationship. The analytical method is simple, reproducible and very sensitive for pyridine determination. Copyright © 2015 Elsevier Inc. All rights reserved.

  2. Electronic structure of chromium-doped lead telluride-based diluted magnetic semiconductors

    International Nuclear Information System (INIS)

    Skipetrov, E.P.; Pichugin, N.A.; Slyn'ko, E.I.; Slyn'ko, V.E.

    2011-01-01

    The crystal structure, composition, galvanomagnetic and oscillatory properties of the Pb 1-x-y Sn x Cr y Te (x = 0, 0.05-0.30, y ≤ 0.01) alloys have been investigated with varying matrix composition and chromium impurity concentration. It is shown that the chromium impurity atoms dissolve in the crystal lattice at least up to 1 mol.%. The following increase of the chromium concentration leads to the appearance of microscopic regions enriched with chromium and inclusions of Cr-Te compounds. A decrease of the hole concentration, a p-n-conversion of the conductivity type and a pinning of the Fermi level by the chromium resonant level are observed with increasing chromium content. Initial rates of changes in the free carrier concentration on doping are determined. The dependences of electron concentration and Fermi level on tin content are calculated by the two-band Kane dispersion relation. A diagram of electronic structure rearrangement for the chromium-doped alloys with varying the matrix composition is proposed.

  3. High-power microcavity lasers based on highly erbium-doped sol-gel aluminosilicate glasses

    International Nuclear Information System (INIS)

    Le Ngoc Chung; Chu Thi Thu Ha; Nguyen Thu Trang; Pham Thu Nga; Pham Van Hoi; Bui Van Thien

    2006-01-01

    High-power whispering-gallery-mode (WGM) lasing from highly erbium-doped sol-gel aluminosilicate microsphere cavity coupled to a half-tapered optical fiber is presented. The lasing output power as high as 0.45 mW (-3.5 dBm) was obtained from sol-gel glass microsphere cavity with diameters in the range of 40-150 μm. The sol-gel method for making highly concentration Er-doped aluminosilicate glasses with Er-ion concentrations from 0.125 to 0.65 mol% of Er 3+ is described. Controlling collected lasing wavelength at each WGM is possible by adjusting the distance between the half-taper fiber and the microcavity and by diameter of the waist of half-taper fiber. Using the analytic formulas we calculated the TE and TM lasing modes and it is shown that the experimental results are in good agreement with the calculation prediction

  4. Oxygen plasma effects on zero resistance behavior of Yb,Er-doped YBCO (123) based superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Schaefer, Helmut; Rathmann, Dirk [Department of Physics, Biophysics, and Photosynthesis, Freie Universitaet Berlin (Germany); Banko, Franziska; Steinhart, Martin [Physical Chemistry, Institute of Chemistry of New Materials, University of Osnabrueck (Germany); Nordmann, Joerg; Voss, Benjamin [Inorganic Chemistry, Institute of Chemistry of New Materials, University of Osnabrueck (Germany); Walder, Lorenz [Organic Chemistry, Molecular Electrochemistry, Institute of Chemistry of New Materials, University of Osnabrueck (Germany)

    2014-08-15

    Rare-earth doped YBa{sub 2}Cu{sub 3}O{sub 7-δ} samples were synthesized starting from the corresponding oxides Y{sub 2}O{sub 3}, Yb{sub 2}O{sub 3}, Er{sub 2}O{sub 3}, CuO as well as Ba(OH){sub 2} by heating to 950 C under air. The doping concentrations were adjusted to 15 % Yb, 7 % Er and 20 % Yb, 15 % Er, respectively, with respect to the yttrium content. The orthogonal phased (123) YBCO ceramics were exposed to an oxygen plasma for 140 and 380 min. Zero resistance temperature (T{sub c,0}) was determined by measuring the resistivity-temperature dependence using a classical four point measurement approach. Under optimal conditions with respect to the material composition and the oxygen treatment an unusual high zero resistance temperature of 97.5 K (T{sub c,onset} ∼ 101 K) was achieved. This represents an increase of T{sub c,0} by 7.5 K. The oxygen treatment could not be monitored by IR spectroscopy, X-ray fluorescence spectroscopy, and X-ray powder diffraction. The results showed good reproducibility. (Copyright copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Alcohol vapor sensing by cadmium-doped zinc oxide thick films based chemical sensor

    Science.gov (United States)

    Zargar, R. A.; Arora, M.; Chackrabarti, S.; Ahmad, S.; Kumar, J.; Hafiz, A. K.

    2016-04-01

    Cadmium-doped zinc oxide nanoparticles were derived by simple chemical co-precipitation route using zinc acetate dihydrate and cadmium acetate dihydrate as precursor materials. The thick films were casted from chemical co-precipitation route prepared nanoparticles by economic facile screen printing method. The structural, morphological, optical and electrical properties of the film were characterized relevant to alcohol vapor sensing application by powder XRD, SEM, UV-VIS and DC conductivity techniques. The response and sensitivity of alcohol (ethanol) vapor sensor are obtained from the recovery curves at optimum working temperature range from 20∘C to 50∘C. The result shows that maximum sensitivity of the sensor is observed at 25∘C operating temperature. On varying alcohol vapor concentration, minor variation in resistance has been observed. The sensing mechanism of sensor has been described in terms of physical adsorption and chemical absorption of alcohol vapors on cadmium-doped zinc oxide film surface and inside film lattice network through weak hydrogen bonding, respectively.

  6. A single-frequency, ring cavity Tm-doped fiber laser based on a CMFBG filter

    International Nuclear Information System (INIS)

    Li, Qi; Yan, Fengping; Peng, Wanjing; Liu, Shuo; Feng, Ting; Tan, Siyu; Liu, Peng

    2013-01-01

    A single-frequency (SF), continuous-wave (CW), ring cavity Tm-doped fiber laser has been proposed and demonstrated. A chirped moiré fiber grating (CMFBG) was used as an ultra-narrow filter in the laser cavity to ensure SF operation. When the launched pump power was fixed at 2 W, this proposed laser was in stable operation with a central wavelength, optical signal-to-noise ratio, and full width at half maximum of 1942.8140 nm, 47 dB, and 0.0522 nm, respectively, with a resolution of 0.05 nm. The maximum output power of this laser is 95 mW, a higher output power is restricted by the optical circulator that is used in the cavity. The SF operation of this laser was confirmed by the self-homodyne method. To the best of the authors’ knowledge, this is the first report on an SF, CW, ring cavity Tm-doped fiber laser with a CMFBG filter. (letter)

  7. Smart methanol sensor based on silver oxide-doped zinc oxide nanoparticles deposited on microchips

    International Nuclear Information System (INIS)

    Rahman, Mohammed M.; Khan, Sher Bahadar; Asiri, Abdullah M.

    2014-01-01

    We have prepared calcined silver oxide-doped zinc oxide nanoparticles (NPs) by a hydrothermal method using reducing agents in alkaline medium. The doped NPs were characterized by UV/vis, FTIR, and X-ray photoelectron spectroscopy, and by X-ray powder diffraction and field-emission scanning electron microscopy. The NPs were deposited on microchips to result in a sensor that has a fast response to methanol in the liquid phase. Features include high sensitivity, low-sample volume, reliability, reproducibility, ease of integration, long-term stability, and enhanced electrochemical responses. The calibration plot is linear (r 2  = 0.9981) over the 0.25 mmolL −1 to 0.25 molL −1 methanol concentration range. The sensitivity is ∼7.917 μA cm −2 mmolL −2 , and the detection limit is 71.0 ± 0.5 μmolL −1 at a signal-to-noise-ratio of 3. (author)

  8. UV shielding with visible transparency based properties of poly (styrene-co-acrylonitrile)/Ag doped ZnO nanocomposite

    Science.gov (United States)

    Singh, Rajender; Verma, Karan; Singh, Tejbir; Barman, P. B.; Sharma, Dheeraj

    2018-02-01

    Development of ultraviolet (UV) shielding with visible transparency based thermoplastic polymer nanocomposite (PNs) presents an important requisite in terms of their efficiency and cost. Present study contributed for the same approach by dispersion of Ag doped ZnO nanoparticles upto 10 wt% in poly (styrene-co-acrylonitrile) matrix by insitu emulsion polymerization method. The crystal and chemical structure of PNs has been analyzed by x-ray diffraction (XRD) and fourier infrared spectrometer (FTIR) techniques. The morphological and elemental information of synthesized nanomaterial has been studied by field emission scanning electron microscope (FESEM) and energy dispersive spectroscopy (EDS) technique. The optical properties of PNs has been studied by UV-visible spectroscopy technique. The incorporation of nanoparticles in polymer matrix absorb the complete UV light with visible transparency. The present reported polymer nanocomposite (PNs) have tuned refractive index with UV blocking and visible transparency based properties which can serve as a viable alternative as compared to related conventional materials.

  9. Fitness Doping and Body Management

    DEFF Research Database (Denmark)

    Thualagant, Nicole

    This PhD thesis examines in a first paper the conceptualization of fitness doping and its current limitations. Based on a review of studies on bodywork and fitness doping it is emphasised that the definition of doping does not provide insights into bodywork of both men and women. Moreover......, it is argued that the social and a cultural context are missing in the many epidemiological studies on the prevalence of doping. The second paper explores the difficulties of implementing an anti-doping policy, which was originally formulated in an elite sport context, in a fitness context and more......-based fitness centres. Based on a survey in ten Danish club-based fitness centres and on narratives from semi-structured interviews, it is highlighted that the objectives of bodywork differ according to the users’ age and gender. Two different ways of investing in the body are explored in the paper, namely...

  10. Investigation of the properties of carbon-base nanostructures doped YBa{sub 2}Cu{sub 3}O{sub 7−δ} high temperature superconductor

    Energy Technology Data Exchange (ETDEWEB)

    Dadras, Sedigheh, E-mail: dadras@alzahra.ac.ir; Ghavamipour, Mahshid

    2016-03-01

    In this research, we have investigated the effects of three samples of carbon-base nanostructures (carbon nanoparticles, carbon nanotubes and silicon carbide nanoparticles) doping on the properties of Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7−δ} (YBCO) high temperature superconductor. The pure and doped YBCO samples were synthesized by sol–gel method and characterized by resistivity versus temperature (ρ–T), current versus voltage (I–V), through X-ray diffraction (XRD) and scanning electron microscope (SEM) analysis. The results confirmed that for all the samples, the orthorhombic phase of YBCO compound is formed. We found that the pinning energy and critical current density of samples increase by adding carbon nanostructures to YBCO compound. Also critical temperature is improved by adding carbon nanotubes to YBCO compound, while it does not change much for carbon and silicon carbide nanoparticles doped compounds. Furthermore, the samples were characterized by UV–vis spectroscopy in 300 K and the band gap of the samples was determined. We found that the carbon nanotubes doping decreases YBCO band gap in normal state from 1.90 eV to 1.68 eV, while carbon and SiC nanoparticles doping increases it to 2.20 and 3.37 eV respectively.

  11. Investigation of the properties of carbon-base nanostructures doped YBa_2Cu_3O_7_−_δ high temperature superconductor

    International Nuclear Information System (INIS)

    Dadras, Sedigheh; Ghavamipour, Mahshid

    2016-01-01

    In this research, we have investigated the effects of three samples of carbon-base nanostructures (carbon nanoparticles, carbon nanotubes and silicon carbide nanoparticles) doping on the properties of Y_1Ba_2Cu_3O_7_−_δ (YBCO) high temperature superconductor. The pure and doped YBCO samples were synthesized by sol–gel method and characterized by resistivity versus temperature (ρ–T), current versus voltage (I–V), through X-ray diffraction (XRD) and scanning electron microscope (SEM) analysis. The results confirmed that for all the samples, the orthorhombic phase of YBCO compound is formed. We found that the pinning energy and critical current density of samples increase by adding carbon nanostructures to YBCO compound. Also critical temperature is improved by adding carbon nanotubes to YBCO compound, while it does not change much for carbon and silicon carbide nanoparticles doped compounds. Furthermore, the samples were characterized by UV–vis spectroscopy in 300 K and the band gap of the samples was determined. We found that the carbon nanotubes doping decreases YBCO band gap in normal state from 1.90 eV to 1.68 eV, while carbon and SiC nanoparticles doping increases it to 2.20 and 3.37 eV respectively.

  12. Nice Guys Finish Last: Are People with Higher Tax Morale Taxed more Heavily?

    OpenAIRE

    Philipp Doerrenberg; Denvil Duncan; Clemens Fuest; Andreas Peichl

    2012-01-01

    This paper is the first to provide evidence of efficient taxation of groups with heterogeneous levels of 'tax morale'. We set up an optimal income tax model where high tax morale implies a high subjective cost of evading taxes. The model predicts that 'nice guys finish last': groups with higher tax morale will be taxed more heavily, simply because taxing them is less costly. Based on unique cross-country micro data and an IV approach to rule out reverse causality, we find empirical support fo...

  13. High-performance and environmentally stable planar heterojunction perovskite solar cells based on a solution-processed copper-doped nickel oxide hole-transporting layer.

    Science.gov (United States)

    Kim, Jong H; Liang, Po-Wei; Williams, Spencer T; Cho, Namchul; Chueh, Chu-Chen; Glaz, Micah S; Ginger, David S; Jen, Alex K-Y

    2015-01-27

    An effective approach to significantly increase the electrical conductivity of a NiOx hole-transporting layer (HTL) to achieve high-efficiency planar heterojunction perovskite solar cells is demonstrated. Perovskite solar cells based on using Cu-doped NiOx HTL show a remarkably improved power conversion efficiency up to 15.40% due to the improved electrical conductivity and enhanced perovskite film quality. General applicability of Cu-doped NiOx to larger bandgap perovskites is also demonstrated in this study. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. A disposable biosensor based on immobilization of laccase with silica spheres on the MWCNTs-doped screen-printed electrode

    Directory of Open Access Journals (Sweden)

    Li Yuanting

    2012-09-01

    Full Text Available Abstract Background Biosensors have attracted increasing attention as reliable analytical instruments in in situ monitoring of public health and environmental pollution. For enzyme-based biosensors, the stabilization of enzymatic activity on the biological recognition element is of great importance. It is generally acknowledged that an effective immobilization technique is a key step to achieve the construction quality of biosensors. Results A novel disposable biosensor was constructed by immobilizing laccase (Lac with silica spheres on the surface of multi-walled carbon nanotubes (MWCNTs-doped screen-printed electrode (SPE. Then, it was characterized in morphology and electrochemical properties by scanning electron microscopy (SEM and cyclic voltammetry (CV. The characterization results indicated that a high loading of Lac and a good electrocatalytic activity could be obtained, attributing to the porous structure, large specific area and good biocompatibility of silica spheres and MWCNTs. Furthermore, the electrochemical sensing properties of the constructed biosensor were investigated by choosing dopamine (DA as the typical model of phenolic compounds. It was shown that the biosensor displays a good linearity in the range from 1.3 to 85.5 μM with a detection limit of 0.42 μM (S/N = 3, and the Michaelis-Menten constant (Kmapp was calculated to be 3.78 μM. Conclusion The immobilization of Lac was successfully achieved with silica spheres to construct a disposable biosensor on the MWCNTs-doped SPE (MWCNTs/SPE. This biosensor could determine DA based on a non-oxidative mechanism in a rapid, selective and sensitive way. Besides, the developed biosensor could retain high enzymatic activity and possess good stability without cross-linking reagents. The proposed immobilization approach and the constructed biosensor offer a great potential for the fabrication of the enzyme-based biosensors and the analysis of phenolic compounds.

  15. Exploring the doping effects of Ag in p-type PbSe compounds with enhanced thermoelectric performance

    Science.gov (United States)

    Wang, Shanyu; Zheng, Gang; Luo, Tingting; She, Xiaoyu; Li, Han; Tang, Xinfeng

    2011-11-01

    In this study, we prepared a series of Ag-doped PbSe bulk materials by a melting-quenching process combined with a subsequent spark plasma sintering process, and systematically investigated the doping effects of Ag on the thermoelectric properties. Ag substitution in the Pb site does not introduce resonant levels near the valence band edge or detectable change in the density of state in the vicinity of the Fermi level, but moves the Fermi level down and increases the carrier concentration to a maximum value of ~4.7 × 1019 cm-3 which is still insufficient for heavily doped PbSe compounds. Nonetheless, the non-monotonic variation in carrier concentration with increasing Ag content indicates that Ag doping reaches the solution limit at ~1.0% and the excessive Ag presumably acts as donors in the materials. Moreover, the large energy gap of the PbSe-based material wipes off significant 'roll-over' in the Seebeck coefficient at elevated temperatures which gives rise to high power factors, being comparable to p-type Te analogues. Consequently, the maximum ZT reaches ~1.0 for the 1.5% Ag-doped samples with optimized carrier density, which is ~70% improvement in comparison with an undoped sample and also superior to the commercialized p-type PbTe materials.

  16. Exploring the doping effects of Ag in p-type PbSe compounds with enhanced thermoelectric performance

    International Nuclear Information System (INIS)

    Wang Shanyu; Zheng Gang; Luo Tingting; She Xiaoyu; Li Han; Tang Xinfeng

    2011-01-01

    In this study, we prepared a series of Ag-doped PbSe bulk materials by a melting-quenching process combined with a subsequent spark plasma sintering process, and systematically investigated the doping effects of Ag on the thermoelectric properties. Ag substitution in the Pb site does not introduce resonant levels near the valence band edge or detectable change in the density of state in the vicinity of the Fermi level, but moves the Fermi level down and increases the carrier concentration to a maximum value of ∼4.7 × 10 19 cm -3 which is still insufficient for heavily doped PbSe compounds. Nonetheless, the non-monotonic variation in carrier concentration with increasing Ag content indicates that Ag doping reaches the solution limit at ∼1.0% and the excessive Ag presumably acts as donors in the materials. Moreover, the large energy gap of the PbSe-based material wipes off significant 'roll-over' in the Seebeck coefficient at elevated temperatures which gives rise to high power factors, being comparable to p-type Te analogues. Consequently, the maximum ZT reaches ∼1.0 for the 1.5% Ag-doped samples with optimized carrier density, which is ∼70% improvement in comparison with an undoped sample and also superior to the commercialized p-type PbTe materials.

  17. Spectrally dependent photovoltages in Schottky photodiode based on (100) B-doped diamond

    International Nuclear Information System (INIS)

    Čermák, Jan; Rezek, Bohuslav; Koide, Yasuo; Takeuchi, Daisuke

    2014-01-01

    Spectrally and spatially resolved photovoltages were measured by Kelvin probe force microscopy (KPFM) on a Schottky photo-diode made of a 4 nm thin tungsten-carbide (WC) layer on a 500 nm oxygen-terminated boron-doped diamond epitaxial layer (O-BDD) that was grown on a Ib (100) diamond substrate. The diode was grounded by the sideways ohmic contact (Ti/WC), and the semitransparent Schottky contact was let unconnected. The electrical potentials across the device were measured in dark (only 650 nm LED of KPFM being on), under broad-band white light (halogen lamp), UV (365 nm diode), and deep ultraviolet (deuterium lamp) illumination. Illumination induced shift of the electrical potential remains within 210 mV. We propose that the photovoltage actually corresponds to a shift of Fermi level inside the BDD channel and thereby explains orders of magnitude changes in photocurrent

  18. Spectrally dependent photovoltages in Schottky photodiode based on (100) B-doped diamond

    Science.gov (United States)

    Čermák, Jan; Koide, Yasuo; Takeuchi, Daisuke; Rezek, Bohuslav

    2014-02-01

    Spectrally and spatially resolved photovoltages were measured by Kelvin probe force microscopy (KPFM) on a Schottky photo-diode made of a 4 nm thin tungsten-carbide (WC) layer on a 500 nm oxygen-terminated boron-doped diamond epitaxial layer (O-BDD) that was grown on a Ib (100) diamond substrate. The diode was grounded by the sideways ohmic contact (Ti/WC), and the semitransparent Schottky contact was let unconnected. The electrical potentials across the device were measured in dark (only 650 nm LED of KPFM being on), under broad-band white light (halogen lamp), UV (365 nm diode), and deep ultraviolet (deuterium lamp) illumination. Illumination induced shift of the electrical potential remains within 210 mV. We propose that the photovoltage actually corresponds to a shift of Fermi level inside the BDD channel and thereby explains orders of magnitude changes in photocurrent.

  19. Covalent modification of boron-doped diamond electrodes with an imidazolium-based ionic liquid

    Energy Technology Data Exchange (ETDEWEB)

    Wang Mei [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France); School of Materials Science and Engineering, Shandong University, 19723 Jingshi Road, Jinan, Shandong Province (China); Schneider, Amene [Austrian Centre of Competence for Tribology, Viktor Kaplan Strasse 2, 2700, Wiener Neustadt (Austria); Niedziolka-Joensson, Joanna; Marcon, Lionel [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France); Ghodbane, Slimane; Steinmueller-Nethl, Doris [Rho-BeSt Coating GmbH, Exlgasse 20a, 6020 Innsbruck (Austria); Li Musen [School of Materials Science and Engineering, Shandong University, 19723 Jingshi Road, Jinan, Shandong Province (China); Boukherroub, Rabah [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France); Szunerits, Sabine, E-mail: sabine.szunerits@iri.univ-lille1.f [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France)

    2010-02-01

    An ionic liquid (IL, 1-(methylcarboxylic acid)-3-octylimidazolium-bis (trifluoromethylsulfonyl)imide) was covalently coupled onto a boron-doped diamond (BDD) surface through an esterification reaction. The resulting surface was characterized by X-ray photoelectron spectroscopy, water contact angle and electrochemical measurements. Selective electron transfer towards positively and negatively charged redox species was recorded. While the presence of Fe(CN){sub 6}{sup 4-} could be detected on the IL-modified BDD interface, no surface-immobilized Ru(NH{sub 3}){sub 6}{sup 3+} was recorded. The IL-modified BDD electrode showed in addition changes in surface wettability when immersed into aqueous solution containing different anions.

  20. Variable RF capacitor based on a-Si:H (P-doped) multi-length cantilevers

    International Nuclear Information System (INIS)

    Fu, Y Q; Milne, S B; Luo, J K; Flewitt, A J; Wang, L; Miao, J M; Milne, W I

    2006-01-01

    A variable RF capacitor with a-Si:H (doped with phosphine) cantilevers as the top electrode were designed and fabricated. Because the top multi-cantilever electrodes have different lengths, increasing the applied voltage pulled down the cantilever beams sequentially, thus realizing a gradual increase of the capacitance with the applied voltage. A high-k material, H f O 2 , was used as an insulating layer to increase the tuning range of the capacitance. The measured capacitance from the fabricated capacitor was much lower and the pull-in voltage was much higher than those from theoretical analysis because of incomplete contact of the two electrodes, existence of film differential stresses and charge injection effect. Increase of sweeping voltage rate could significantly shift the pull-in voltage to higher values due to the charge injection mechanisms

  1. Nitrogen-Doped Holey Graphene Film-Based Ultrafast Electrochemical Capacitors.

    Science.gov (United States)

    Zhou, Qinqin; Zhang, Miao; Chen, Ji; Hong, Jong-Dal; Shi, Gaoquan

    2016-08-17

    The commercialized aluminum electrolytic capacitors (AECs) currently used for alternating current (AC) line-filtering are usually the largest components in the electronic circuits because of their low specific capacitances and bulky sizes. Herein, nitrogen-doped holey graphene (NHG) films were prepared by thermal annealing the composite films of polyvinylpyrrolidone (PVP), graphene oxide (GO), and ferric oxide (Fe2O3) nanorods followed by chemical etching with hydrochloride acid. The typical electrochemical capacitor with NHG electrodes exhibited high areal and volumetric specific capacitances of 478 μF cm(-2) and 1.2 F cm(-3) at 120 Hz, ultrafast frequency response with a phase angle of -81.2° and a resistor-capacitor time constant of 203 μs at 120 Hz, as well as excellent cycling stability. Thus, it is promising to replace conventional AEC for AC line-filtering in miniaturized electronics.

  2. A Q-Switched Erbium-Doped Fiber Laser with a Carbon Nanotube Based Saturable Absorber

    International Nuclear Information System (INIS)

    Harun, S. W.; Ismail, M. A.; Ahmad, F.; Ismail, M. F.; Nor, R. M.; Zulkepely, N. R.; Ahmad, H.

    2012-01-01

    We demonstrate a simple, compact and low cost Q-switched erbium-doped fiber laser (EDFL) using single-wall carbon nanotubes (CNTs) as a saturable absorber for possible applications in metrology, sensing, and medical diagnostics. The EDFL operates at around 1560 nm with repetition rates of 16.1 kHz and 6.4 kHz with saturable absorbers SA1 and SA2 at a pump power of 120 mW. The absorbers are constructed by optically driven deposition and normal deposition techniques. It is observed that the optical deposition method produces a Q-switched EDFL with a lower threshold of 70 mW and better Q-switching performance compared to that of the normal deposition method. The EDFL also has pulse energy of 90.3 nJ and pulse width of 11.6 μs at 120 mW pump power

  3. Spectrally dependent photovoltages in Schottky photodiode based on (100) B-doped diamond

    Energy Technology Data Exchange (ETDEWEB)

    Čermák, Jan, E-mail: cermakj@fzu.cz; Rezek, Bohuslav [Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, 16200 Prague 6 (Czech Republic); Koide, Yasuo [Sensor Materials Center, National Institute for Material Science (NIMS), 1-1 Namiki, Tsukuba 305-0044 (Japan); Takeuchi, Daisuke [Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba 305-8568 (Japan)

    2014-02-07

    Spectrally and spatially resolved photovoltages were measured by Kelvin probe force microscopy (KPFM) on a Schottky photo-diode made of a 4 nm thin tungsten-carbide (WC) layer on a 500 nm oxygen-terminated boron-doped diamond epitaxial layer (O-BDD) that was grown on a Ib (100) diamond substrate. The diode was grounded by the sideways ohmic contact (Ti/WC), and the semitransparent Schottky contact was let unconnected. The electrical potentials across the device were measured in dark (only 650 nm LED of KPFM being on), under broad-band white light (halogen lamp), UV (365 nm diode), and deep ultraviolet (deuterium lamp) illumination. Illumination induced shift of the electrical potential remains within 210 mV. We propose that the photovoltage actually corresponds to a shift of Fermi level inside the BDD channel and thereby explains orders of magnitude changes in photocurrent.

  4. Optical properties of Eu{sup 3+}-doped antimony-oxide-based low phonon disordered matrices

    Energy Technology Data Exchange (ETDEWEB)

    Som, Tirtha; Karmakar, Basudeb, E-mail: basudebk@cgcri.res.i [Glass Technology Laboratory, Glass Division, Central Glass and Ceramic Research Institute (Council of Scientific and Industrial Research), 196 Raja S C Mullick Road, Kolkata 700032 (India)

    2010-01-27

    A new series of monolithic Eu{sub 2}O{sub 3}-doped high antimony oxide (40-80 mol%) content disordered matrices (glasses) of low phonon energy (about 600 cm{sup -1}) in the K{sub 2}O-B{sub 2}O{sub 3}-Sb{sub 2}O{sub 3} (KBS) system was prepared by the melt-quench technique. Infrared reflection spectroscopy was used to establish the low phonon energy of the glasses. Amorphicity and devitrification of the glasses were confirmed by x-ray diffraction analysis. UV-vis absorption spectra of Eu{sup 3+} have been measured and the band positions have been justified with quantitative calculation of the nephelauxetic parameter and covalent bonding characteristics of the host. These Eu{sub 2}O{sub 3}-doped glasses upon excitation at 393 nm radiation exhibit six emission bands in the range 500-750 nm due to their low phonon energy. Of these, the magnetic dipole {sup 5}D{sub 0} -> {sup 7}F{sub 1} transition shows small Stark splitting while the electric dipole {sup 5}D{sub 0}->{sup 7}F{sub 2} transition undergoes remarkable Stark splitting into two components. They have been explained by the crystal field effect. The Judd-Ofelt parameters, {Omega}{sub t{sub =2,4,6}}, were also evaluated and the change of {Omega}{sub t} with the glass composition was correlated with the asymmetric effect at Eu{sup 3+} ion sites and the fundamental properties like covalent character and optical basicity. We are the first to report the spectroscopic properties of the Eu{sup 3+} ion in KBS low phonon antimony glasses.

  5. Electromagnetic behavior of radar absorbing materials based on Ca hexaferrite modified with Co-Ti ions and doped with La

    Directory of Open Access Journals (Sweden)

    Valdirene Aparecida da Silva

    2009-06-01

    Full Text Available Radar Absorbing Materials (RAM are compounds that absorb incidental electromagnetic radiation in tuned frequencies and dissipate it as heat. Its preparation involves the adequate processing of polymeric matrices filled with compounds that act as radar absorbing centers in the microwave range. This work shows the electromagnetic evaluation of RAM based on CoTi and La doped Ca hexaferrite. Vibrating Sample Magnetization analyses show that ion substitution promoted low values for the parameters of saturation magnetization (123.65 Am2/kg and coercive field (0.07 T indicating ferrite softening. RAM samples obtained using different hexaferrite concentrations (40-80 per cent, w/w show variations in complex permeability and permittivity parameters and also in the performance of incidental radiation attenuation. Microwave attenuation values between 40 and 98 per cent were obtained.

  6. Analysis of electrical and microstructural characteristics of a ZnO-based varistor doped with rare earth oxide

    International Nuclear Information System (INIS)

    Andrade, J.M. de; Dias, R.; Furtado, J.G. de M.; Assuncao, F.C.R.

    2010-01-01

    Varistor is a semiconductor device, used in the protection of electrical systems, characterized to have a high no-linear electric resistance. Its properties are directly dependents of its chemical composition and microstructural characteristics. In this work were analyzed microstructural and electrical characteristics of a ZnO-based varistor doped with rare earth oxide, with chemical composition (mol%) 98,5.ZnO - 0,3.Pr 6 O 11 - 0,2.Dy 2 O 3 - 0,9.Co 2 O 3 - 0,1.Cr 2 O 3 . X-ray diffraction for phase characterization, scanning electron microscopy and energy dispersive X-ray spectroscopy were used for microstructural analysis. Measurement of average grain size and electrical and dielectric characteristics complete the characterization. The results show the formation of biphasic microstructure and with high densification, presenting relevant varistors characteristics but that would need improvements.(author)

  7. Optical spectroscopy, 1.06μm emission properties of Nd3+-doped phosphate based glasses.

    Science.gov (United States)

    Sk Nayab, Rasool; T, Sasikala; A, Mohan Babu; L, Rama Moorthy; C K, Jayasankar

    2017-06-05

    Neodymium doped phosphate based glasses with composition of (P 2 O 5 +K 2 O+Al 2 O 3 +CaF 2 ) were prepared. The samples were analysed through differential thermal analysis (DTA), Fourier transform infrared (FTIR), absorption, emission and decay measurements. Judd-Ofelt parameters (Ω λ ) have been determined from the spectral intensities of absorption bands in order to calculate the radiative parameters like radiative transition probabilities (A R ), radiative lifetime (τ R ) and branching ratios (β R ) for the 4 F 3/2 → 4 I 11/2 laser transition of Nd 3+ ion. The effective emission bandwidths (Δλ eff ), experimental branching ratios (β exp ) and stimulated emission cross-sections (σ e ) have been determined from the emission spectrum. The decay curves of the 4 F 3/2 level exhibited almost single exponential nature for all the Nd 3+ ion concentrations. Copyright © 2017 Elsevier B.V. All rights reserved.

  8. Highly sensitive formaldehyde resistive sensor based on a single Er-doped SnO_2 nanobelt

    International Nuclear Information System (INIS)

    Li, Shuanghui; Liu, Yingkai; Wu, Yuemei; Chen, Weiwu; Qin, Zhaojun; Gong, Nailiang; Yu, Dapeng

    2016-01-01

    SnO_2 nanobelts (SnO_2 NBs) and Er"3"+-doped SnO_2 nanobelts (Er–SnO_2 NBs) were synthesized by thermal evaporation. The obtained samples were characterized by scanning electron microscope (SEM), X-ray diffraction (XRD), energy dispersion spectrometer (EDS), and X-ray photoelectron spectrometer (XPS). It is found that Er–SnO_2 NBs have a good morphology with smooth surface and their thickness are about 30 nm, widths between 200 nm and 600 nm, and lengths 30–80 mm. The nanobelts with good morphology were taken to develop sensors based on a single Er–SnO_2 NB/SnO_2 NB for studying sensitive properties. The results reveal that the response of a single Er–SnO_2 nanobelt device is 9 to the formaldehyde gas with a shorter response (recovery time) of 17 (25) s.

  9. Inorganic ion exchanger based on tin/titanium mixed oxide doped with europium to be used in radioactive waste

    International Nuclear Information System (INIS)

    Paganini, Paula P.; Felinto, Maria Claudia F.C.; Kodaira, Claudia A.; Brito, Hermi F.

    2009-01-01

    This work presents the results of synthesis and characterization of an inorganic ion exchanger based on tin/titanium mixed oxides doped with europium (SnO 2 /TiO 2 :Eu 3+ ) to be used in environmental field. The adsorption study of nickel was realized in this exchanger to recover the nickel metal which is in thorium-nickel alloys used as electrode of discharge lamps. The studied exchanger was synthesized by neutralization of tin chloride (IV) and titanium chloride (III) mixed solution and characterized by thermogravimetric measurement (TG), Differential Scanning Calorimetry (DSC), X-Ray Powder Diffraction (XRD), Infrared Spectroscopy (IR) and Scanning Electron Microscopy (SEM). The adsorption study showed that these inorganic ion exchangers are good materials to recovery nickel with high weight distribution ratios (Dw Ni 2+ ) and percent adsorption. (author)

  10. High-energy master oscillator power amplifier with near-diffraction-limited output based on ytterbium-doped PCF fiber

    Science.gov (United States)

    Li, Rao; Qiao, Zhi; Wang, Xiaochao; Fan, Wei; Lin, Zunqi

    2017-10-01

    With the development of fiber technologies, fiber lasers are able to deliver very high power beams and high energy pulses which can be used not only in scientific researches but industrial fields (laser marking, welding,…). The key of high power fiber laser is fiber amplifier. In this paper, we present a two-level master-oscillator power amplifier system at 1053 nm based on Yb-doped photonic crystal fibers. The system is used in the front-end of high power laser facility for the amplification of nano-second pulses to meet the high-level requirements. Thanks to the high gain of the system which is over 50 dB, the pulse of more than 0.89 mJ energy with the nearly diffraction-limited beam quality has been obtained.

  11. Integrated photooxidative extractive deep desulfurization using metal doped TiO2 and eutectic based ionic liquid

    Science.gov (United States)

    Zaid, Hayyiratul Fatimah Mohd; Kait, Chong Fai; Mutalib, Mohamed Ibrahim Abdul

    2016-11-01

    A series of metal doped TiO2 namely Fe/TiO2, Cu/TiO2 and Cu-Fe/TiO2 were synthesized and characterized, to be used as a photocatalyst in the integrated photooxidative extractive deep desulfurization for model oil (dodecane) and diesel fuel. The order of the photocatalytic activity was Cu-Fe/TiO2 followed by Cu/TiO2 and then Fe/TiO2. Cu-Fe/TiO2 was an effective photocatalyst for sulfur conversion at ambient atmospheric pressure. Hydrogen peroxide was used as the source of oxidant and eutectic-based ionic liquid as the extractant. Sulfur conversion in model oil reached 100%. Removal of sulfur from model oil was done by two times extraction with a removal of 97.06% in the first run and 2.94% in the second run.

  12. 1H DNP at 1.4 T of Water Doped with a Triarylmethyl-Based Radical

    DEFF Research Database (Denmark)

    Wind, Robert A.; Ardenkjær-Larsen, Jan Henrik

    1999-01-01

    Recently a triarylmethyl-based (TAM) radical has been developed for research in biological and other aqueous systems, and in low magnetic fields, 10 mT or less, large 1H dynamic nuclear polarization (DNP) enhancements have been reported. In this paper the DNP properties of this radical have been...... perpendicular to the electric component of the microwave field. It was found that with this probe the temperature increase in the sample after 4 s of microwave irradiation with an incident power of 10 W was only 16°C. For the investigations, 10 mM of the TAM radical was dissolved in deionized, but not degassed...... than the largest high-resolution magnet available to date. It is concluded that DNP MRM in this field, which corresponds to a standard microwave frequency of 9 GHz, has the potential to significantly increase the sensitivity in NMR and MRI experiments of small aqueous samples doped with the TAM radical....

  13. Stratigraphy of a diamond epitaxial three-dimensional overgrowth using doping superlattices

    Science.gov (United States)

    Lloret, F.; Fiori, A.; Araujo, D.; Eon, D.; Villar, M. P.; Bustarret, E.

    2016-05-01

    The selective doped overgrowth of 3D mesa patterns and trenches has become an essential fabrication step of advanced monolithic diamond-based power devices. The methodology here proposed combines the overgrowth of plasma-etched cylindrical mesa structures with the sequential growth of doping superlattices. The latter involve thin heavily boron doped epilayers separating thicker undoped epilayers in a periodic fashion. Besides the classical shape analysis under the scanning electron microscope relying on the appearance of facets corresponding to the main crystallographic directions and their evolution toward slow growing facets, the doping superlattices were used as markers in oriented cross-sectional lamellas prepared by focused ion beam and observed by transmission electron microscopy. This stratigraphic approach is shown here to be applicable to overgrown structures where faceting was not detectable. Intermediate growth directions were detected at different times of the growth process and the periodicity of the superlattice allowed to calculate the growth rates and parameters, providing an original insight into the planarization mechanism. Different configurations of the growth front were obtained for different sample orientations, illustrating the anisotropy of the 3D growth. Dislocations were also observed along the lateral growth fronts with two types of Burger vector: b 01 1 ¯ = /1 2 [ 01 1 ¯ ] and b 112 = /1 6 [ 112 ] . Moreover, the clustering of these extended defects in specific regions of the overgrowth prompted a proposal of two different dislocation generation mechanisms.

  14. Doping droops.

    Science.gov (United States)

    Chaturvedi, Aditi; Chaturvedi, Harish; Kalra, Juhi; Kalra, Sudhanshu

    2007-01-01

    Drug abuse is a major concern in the athletic world. The misconception among athletes and their coaches is that when an athlete breaks a record it is due to some "magic ingredient" and not because of training, hard work, mental attitude and championship performance. The personal motivation to win in competitive sports has been intensified by national, political, professional and economic incentives. Under this increased pressure athletes have turned to finding this "magic ingredient". Athlete turns to mechanical (exercise, massage), nutritional (vitamins, minerals), pharmacological (medicines) or gene therapies to have an edge over other players. The World Anti-Doping Agency (WADA) has already asked scientists to help find ways to prevent gene therapy from becoming the newest form of doping. The safety of the life of athletes is compromised with all forms of doping techniques, be it a side effect of a drug or a new technique of gene doping.

  15. Transport Properties Of PbI2 Doped Silver Oxysalt Based Amorphous Solid Electrolytes

    Science.gov (United States)

    Shrisanjaykumar Jayswal, Manishkumar

    Solid electrolytes are a class of materials that conduct electricity by means of motion of ions like Ag+, Na+, Li +, Cu+, H+, F-, O -2 etc. in solid phase. The host materials include crystalline, polycrystalline, glasses, polymers and composites. Ion conducting glasses are one of the most sought after solid electrolytes that are useful in various electrochemical applications like solid state batteries, gas sensors, supercapacitors, electrochromic devices, to name a few. Since the discovery of fast silver ion transport in silver oxyhalide glasses at the end of the 1960s, many glasses showing large ionic conductivity up to 10-4 10-2 S/cm at room temperature have been developed, chiefly silver and copper ion conductors. The silver ion conducting glasses owe their high ionic conductivity mainly to stabilized alpha-AgI. AgI, as we know, undergoes a structural phase transition from wurtzite (beta phase) at room temperature to body centered cubic (alpha phase) structure at temperatures higher than 146 °C. The alpha-AgI possesses approximately six order of higher ionic conductivity than beta-AgI. The high ionic conductivity of alpha-AgI is attributed to its molten sublattice type of structure, which facilitates easy Ag+ ion migration, like a liquid. And hence, several attempts have been made to stabilize it at room temperature in crystalline as well as non-crystalline hosts like oxide and non-oxide glasses. Recently, in order to stabilize AgI in glasses, instead of directly doping it, indirect routes have also been explored. Where, a metal iodide salt along with silver oxide or silver phosphate is taken and an exchange reaction permitted by Hard and Soft, Acid and Base (HSAB) principle occurs between the two and AgI and metal oxide form in the glass forming melt. Work done in the present thesis has been organized in seven chapters as follows: Chapter 1: A review and background information of different solid electrolyte materials and their development is presented. Along

  16. Stored energy and annealing behavior of heavily deformed aluminium

    DEFF Research Database (Denmark)

    Kamikawa, Naoya; Huang, Xiaoxu; Kondo, Yuka

    2012-01-01

    It has been demonstrated in previous work that a two-step annealing treatment, including a low-temperature, long-time annealing and a subsequent high-temperature annealing, is a promising route to control the microstructure of a heavily deformed metal. In the present study, structural parameters...... are quantified such as boundary spacing, misorientation angle and dislocation density for 99.99% aluminium deformed by accumulative roll-bonding to a strain of 4.8. Two different annealing processes have been applied; (i) one-step annealing for 0.5 h at 100-400°C and (ii) two-step annealing for 6 h at 175°C...... followed by 0.5 h annealing at 200-600°C, where the former treatment leads to discontinuous recrystallization and the latter to uniform structural coarsening. This behavior has been analyzed in terms of the relative change during annealing of energy stored as elastic energy in the dislocation structure...

  17. Boron-doped nanodiamonds as possible agents for local hyperthermia

    Science.gov (United States)

    Vervald, A. M.; Burikov, S. A.; Vlasov, I. I.; Ekimov, E. A.; Shenderova, O. A.; Dolenko, T. A.

    2017-04-01

    In this work, the effective heating of surrounding water by heavily-boron-doped nanodiamonds (NDs) under laser irradiation of visible wavelength was found. Using Raman scattering spectroscopy of aqueous suspensions of boron-doped NDs, it was found that this abnormally high heating results in the weakening of hydrogen bonds much more so (2-5 times stronger) than for undoped NDs. The property of boron-doped NDs to heat a solvent under the influence of laser radiation (1-5 W cm-2) opens broad prospects for their use to create nanoagents for medical oncology and local hyperthermia.

  18. Approaches to contactless optical thermometer in the NIR spectral range based on Nd{sup 3+} doped crystalline nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Kaldvee, K.; Nefedova, A.V. [Institute of Physics, University of Tartu, W. Ostwaldi st. 1, Tartu 50411 (Estonia); Fedorenko, S.G. [Voevodsky Institute of Chemical Kinetics and Combustion SB RAS, Novosibirsk 630090 (Russian Federation); Vanetsev, A.S. [Institute of Physics, University of Tartu, W. Ostwaldi st. 1, Tartu 50411 (Estonia); Prokhorov General Physics Institute RAS, Vavilov st. 38, Moscow 119991 (Russian Federation); Orlovskaya, E.O. [Prokhorov General Physics Institute RAS, Vavilov st. 38, Moscow 119991 (Russian Federation); Puust, L.; Pärs, M.; Sildos, I. [Institute of Physics, University of Tartu, W. Ostwaldi st. 1, Tartu 50411 (Estonia); Ryabova, A.V. [Prokhorov General Physics Institute RAS, Vavilov st. 38, Moscow 119991 (Russian Federation); National Research Nuclear University Moscow Engineering Physics Institute, Kashirskoe Highway, 31, Moscow 115409 (Russian Federation); Orlovskii, Yu.V., E-mail: orlovski@Lst.gpi.ru [Institute of Physics, University of Tartu, W. Ostwaldi st. 1, Tartu 50411 (Estonia); Prokhorov General Physics Institute RAS, Vavilov st. 38, Moscow 119991 (Russian Federation)

    2017-03-15

    The fluorescence kinetics and spectral intensity ratio (FIR) methods for contactless optical temperature measurement in the NIR spectral range with Nd{sup 3+} doped YAG micro- and YPO{sub 4} nanocrystals are considered and the problems are revealed. The requirements for good temperature RE doped crystalline nanoparticles sensor are formulated.

  19. Anion exchange membrane based on alkali doped poly(2,5-benzimidazole) for alkaline membrane fuel cell

    CSIR Research Space (South Africa)

    Luo, H

    2010-03-01

    Full Text Available was prepared. The alkali doped poly(2,5-benzimidazole) membrane is a promising candidate as anion exchange membrane for fuel cell application. The alkali doped poly(2,5-benzimidazole) membrane reached an anion conductivity of 2.3×10-2 S cm-1 at room temperature...

  20. Fabrication and characterization of chromium-doped nanophase separated yttria-alumina-silica glass-based optical fibers

    Energy Technology Data Exchange (ETDEWEB)

    Dutta, Debjit; Dhar, Anirban; Das, Shyamal; Paul, Mukul C. [Fiber Optics and Photonics Division, CSIR-Central Glass and Ceramic Research Institute, Kolkata (India); Kir' yanov, Alexander V. [Centro de Investigaciones en Optica, Guanajuato (Mexico); Bysakh, Sandip [Electron Microscopic Section, Material Characterization Division, CSIR-Central Glass and Ceramic Research Institute, Kolkata (India)

    2015-08-15

    The basic material and optical properties of chromium-doped nanophase-separated yttria-alumina-silica (YAS) glass based optical preforms and fibers, fabricated through the modified chemical vapor deposition process in conjunction with solution doping technique under suitable thermal annealing conditions are reported. The size of the phase-separated particles within the core of the annealed preform is around 20-30 nm which is significantly reduced to around 5.0 nm in the drawn fiber. The absorption spectra of fibers drawn from the annealed and non-annealed preform samples revealed the presence of Cr{sup 4+}, Cr{sup 3+}, and Cr{sup 6+} specie. Numerically, extinction of absorption drops ∝3-3.5 times for the annealed sample as a result of nano-phase restructuration during annealing process. Intense broadband emission (within 500-800 nm) in case of the annealed preform sample is observed as compared to the non-annealed one and is associated with the presence of Cr{sup 3+} ions in nanostructured environment inside the YAS core glass. The final fibers show broadband emission ranging from 900 to 1400 nm under pumping at 1064 nm which is attributed mainly to the presence of Cr{sup 3+}/Cr{sup 4+} ions. The fabricated fibers seem to be a potential candidate for the development of fiber laser sources for the visible and near-infra ranges and for effective Q-switching units for ∝1-1.1 μm all-fiber ytterbium lasers. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Effect of Al doping on the magnetic and electrical properties of Zn(Cu)O based diluted magnetic semiconductors

    Science.gov (United States)

    Chakraborti, D.; Trichy, G.; Narayan, J.; Prater, J. T.; Kumar, D.

    2007-12-01

    The effect of Al doping on the magnetic properties of Zn(Cu)O based dilute magnetic semiconducting thin films has been systematically investigated. Epitaxial thin films have been deposited onto sapphire c-plane single crystals using pulsed laser deposition technique. X-ray diffraction and high resolution transmission electron microscopy studies show that the Zn(Cu,Al)O films are epitaxially grown onto (0001) sapphire substrates with a 30°/90° rotation in the basal plane. The large lattice misfit of the order of 16% is accommodated by matching integral multiples of lattice and substrate planes. In these large mismatch systems, the resulting films are fully relaxed following deposition of the first complete monolayer of ZnO (consistent with a critical thickness that is less than one monolayer). Magnetic hysteresis measurements indicate that the pure Zn(Cu)O thin films are ferromagnetic at room temperature. Doping with up to 5% Al (n type) does not significantly affect the ferromagnetism even though it results in an increase in carrier densities of more than 3 orders of magnitude, rising from 1×1017 to 1.5×1020 cm-3. However, for Al additions above 5%, a drop in net magnetization is observed. Annealing the films in an oxygen atmosphere at 600 °C also resulted in a dramatic drop in magnetic moment of the samples. These results strongly suggest that carrier induced exchange is not directly responsible for the magnetic properties of these materials. Rather, a defect mediated exchange mechanism needs to be invoked for this system.

  2. Dark solitons in erbium-doped fiber lasers based on indium tin oxide as saturable absorbers

    Science.gov (United States)

    Guo, Jia; Zhang, Huanian; Li, Zhen; Sheng, Yingqiang; Guo, Quanxin; Han, Xile; Liu, Yanjun; Man, Baoyuan; Ning, Tingyin; Jiang, Shouzhen

    2018-04-01

    Dark solitons, which have good stability, long transmission distance and strong anti-interference ability. By using a coprecipitation method, the high quality indium tin oxide (ITO) were prepared with an average diameter of 34.1 nm. We used a typical Z-scan scheme involving a balanced twin-detector measurement system to investigated nonlinear optical properties of the ITO nanoparticles. The saturation intensity and modulation depths are 13.21 MW/cm2 and 0.48%, respectively. In an erbium-doped fiber (EDF) lasers, we using the ITO nanoparticles as saturable absorber (SA), and the formation of dark soliton is experimentally demonstrated. The generated dark solitons are centered at the wavelength of 1561.1 nm with a repetition rate of 22.06 MHz. Besides, the pulse width and pulse-to-pulse interval of the dark solitons is ∼1.33ns and 45.11 ns, respectively. These results indicate that the ITO nanoparticles is a promising nanomaterial for ultrafast photonics.

  3. N-doped polypyrrole-based porous carbons for CO{sub 2} capture

    Energy Technology Data Exchange (ETDEWEB)

    Sevilla, Marta; Valle-Vigon, Patricia; Fuertes, Antonio B. [Instituto Nacional del Carbon (CSIC), P.O. Box 73, 33080 Oviedo (Spain)

    2011-07-22

    Highly porous N-doped carbons have been successfully prepared by using KOH as activating agent and polypyrrole (PPy) as carbon precursor. These materials were investigated as sorbents for CO{sub 2} capture. The activation process was carried out under severe (KOH/PPy = 4) or mild (KOH/PPy = 2) activation conditions at different temperatures in the 600-800 C range. Mildly activated carbons have two important characteristics: i) they contain a large number of nitrogen functional groups (up to 10.1 wt% N) identified as pyridonic-N with a small proportion of pyridinic-N groups, and ii) they exhibit, in relation to the carbons prepared with KOH/PPy = 4, narrower micropore sizes. The combination of both of these properties explains the large CO{sub 2} adsorption capacities of mildly activated carbon. In particular, a very high CO{sub 2} adsorption uptake of 6.2 mmol.g{sup -1} (0 C) was achieved for porous carbons prepared with KOH/PPy = 2 and 600 C (1700 m{sup 2}.g{sup -1}, pore size {approx} 1 nm and 10.1 wt% N. Furthermore, we observed that these porous carbons exhibit high CO{sub 2} adsorption rates, a good selectivity for CO{sub 2}-N{sub 2} separation and it can be easily regenerated. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Characteristics of Honeycomb-Type Oxygen Generator with Electrolyte Based on Doped Bismuth Oxide

    Science.gov (United States)

    Chen, Yu-Wen; Liu, Yi-Xin; Wang, Sea-Fue; Devasenathipathy, Rajkumar

    2018-03-01

    An oxygen generator using Y-doped Bi2O3 as electrolyte to transport oxygen ions has been developed, having honeycomb-type structure with dimensions of 40 mm × 35 mm × 30 mm and consisting of 13 × 12 channels. External wire circuitry for the channels arrayed using parallel, series, and hybrid connection was evaluated to achieve the best oxygen separation efficiency. It was observed that the oxygen generator with hybrid connection facilitated evolution of oxygen at maximum of 117 sccm and high purity > 99.9% at 550°C under current flow of 14 A. Addition of 5 wt.% silane and 3 wt.% glass-ceramic powder to the Ag slurry used at both electrodes not only increased the coverage of the metal electrode on the ceramic substrate during dip coating but also prevented cracking at the electrode layer of the module under stress from the electric field and temperature during high-temperature operation, thus reducing the decay rate of the oxygen generator in durability testing.

  5. Submicrosecond Q-Switching Er-Doped All-Fiber Ring Laser Based on Black Phosphorus

    Directory of Open Access Journals (Sweden)

    Yao Cai

    2017-01-01

    Full Text Available Black phosphorus (BP, a new two-dimensional (2D material, has been deeply developed for extensive applications in electronics and optoelectronics due to its similar physical structure to graphene and thickness dependent direct band gap. Here, we demonstrated a submicrosecond passive Q-switching Er-doped fiber laser with BP as saturable absorber (SA. The BP saturable absorber was fabricated by mechanical exfoliation method. By taking full advantage of the ultrafast relaxation time of BP-SA and careful design of compact ring cavity, we obtained stable Q-switching pulses output with a shortest duration as narrow as 742 ns. With increasing the pump power, the pulse repetition rate accreted gradually almost linearly from 9.78 to 61.25 kHz, and the pulse duration declined rapidly at lower pump power regime and retained approximate stationary at higher pump power regime from 3.05 to 0.742 μs. The experimental results indicate that BP-SA can be an effective SA for nanosecond Q-switching pulse generation.

  6. Yield strength of a heavily drawn Cu-20% Nb filamentary microcomposite

    International Nuclear Information System (INIS)

    Hong, S.I.

    1998-01-01

    It has been well documented that heavily-drawn, copper-niobium microcomposites possess high strength and high conductivity. Since niobium has little solubility in copper, the conductivity of the copper is not strongly affected by the addition of niobium. Following extensive mechanical deformation of Cu-Nb, niobium dendrites transform into fine niobium ribbons as a result of the niobium texture upon drawing. This nanostructure contributes to the ultrahigh strength of Cu-Nb microcomposites. The strength of heavily deformed Cu-Nb exceeds that predicted by the rule-of-mixtures (ROM), and a fundamental understanding of the strengthening mechanisms involved has been the subject of much discussion. Spitzig and his coworkers suggests a barrier strengthening model while Funkenbusch and Courtney believe that stored dislocations have a role in substructural hardening. Hangen and Raabe recently proposed an analytical model for the calculation of the yield strength of Cu-Nb microcomposite. The model of Hangen and Raabe and that of Spitzig and his coworkers have a great deal of resemblance since both models attribute the strength to the difficulty of propagating plastic flow through the interface. The purpose of this study was to enhance the understanding of the strengthening mechanisms associated with Cu-Nb microcomposites by examining the previous studies on mechanical and microstructural stability of Cu-based microcomposites

  7. Pr{sup 3+}-doped GeS{sub {ital x}}-based glasses for fiber amplifiers at 1.3 {mu}m

    Energy Technology Data Exchange (ETDEWEB)

    Simons, D.R.; Faber, A.J.; de Waal, H. [Glass Technology, Eindhoven University of Technology, P.O. Box 595, 5600 AN Eindhoven (Netherlands)

    1995-03-01

    The photoluminescence properties of Pr{sup 3+}-doped GeS{sub {ital x}}-based glasses are studied and compared with those of other sulfide and fluoride glasses. The possibility of highly pump-power-efficient fiber amplifiers based on these GeS{sub {ital x}}-containing glasses in the telecommunications window at 1.3 {mu}m is discussed.

  8. Effects of the F4TCNQ-Doped Pentacene Interlayers on Performance Improvement of Top-Contact Pentacene-Based Organic Thin-Film Transistors

    OpenAIRE

    Ching-Lin Fan; Wei-Chun Lin; Hsiang-Sheng Chang; Yu-Zuo Lin; Bohr-Ran Huang

    2016-01-01

    In this paper, the top-contact (TC) pentacene-based organic thin-film transistor (OTFT) with a tetrafluorotetracyanoquinodimethane (F4TCNQ)-doped pentacene interlayer between the source/drain electrodes and the pentacene channel layer were fabricated using the co-evaporation method. Compared with a pentacene-based OTFT without an interlayer, OTFTs with an F4TCNQ:pentacene ratio of 1:1 showed considerably improved electrical characteristics. In addition, the dependence of the OTFT performance ...

  9. Heavy doping effects in high efficiency silicon solar cells

    Science.gov (United States)

    Lindholm, F. A.; Neugroschel, A.

    1986-01-01

    The temperature dependence of the emitter saturation current for bipolar devices was studied by varying the surface recombination velocity at the emitter surface. From this dependence, the value was derived for bandgap narrowing that is in better agreement with other determinations that were obtained from the temperature dependence measure on devices with ohmic contacts. Results of the first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer were reported. The value was obtained by a high-frequency conductance method recently developed and used for doped Si. Experimental evidence is presented for significantly greater charge storage in highly excited silicon near room temperature than conventional theory would predict. These data are compared with various data for delta E sub G in heavily doped silicon.

  10. Developing strategies for detection of gene doping.

    Science.gov (United States)

    Baoutina, Anna; Alexander, Ian E; Rasko, John E J; Emslie, Kerry R

    2008-01-01

    It is feared that the use of gene transfer technology to enhance athletic performance, the practice that has received the term 'gene doping', may soon become a real threat to the world of sport. As recognised by the anti-doping community, gene doping, like doping in any form, undermines principles of fair play in sport and most importantly, involves major health risks to athletes who partake in gene doping. One attraction of gene doping for such athletes and their entourage lies in the apparent difficulty of detecting its use. Since the realisation of the threat of gene doping to sport in 2001, the anti-doping community and scientists from different disciplines concerned with potential misuse of gene therapy technologies for performance enhancement have focused extensive efforts on developing robust methods for gene doping detection which could be used by the World Anti-Doping Agency to monitor athletes and would meet the requirements of a legally defensible test. Here we review the approaches and technologies which are being evaluated for the detection of gene doping, as well as for monitoring the efficacy of legitimate gene therapy, in relation to the detection target, the type of sample required for analysis and detection methods. We examine the accumulated knowledge on responses of the body, at both cellular and systemic levels, to gene transfer and evaluate strategies for gene doping detection based on current knowledge of gene technology, immunology, transcriptomics, proteomics, biochemistry and physiology. (c) 2008 John Wiley & Sons, Ltd.

  11. Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes

    Science.gov (United States)

    Zhang, Yiping; Zhang, Zi-Hui; Tan, Swee Tiam; Hernandez-Martinez, Pedro Ludwig; Zhu, Binbin; Lu, Shunpeng; Kang, Xue Jun; Sun, Xiao Wei; Demir, Hilmi Volkan

    2017-01-01

    Due to the limitation of the hole injection, p-type doping is essential to improve the performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs). In this work, we propose and show a depletion-region Mg-doping method. Here we systematically analyze the effectiveness of different Mg-doping profiles ranging from the electron blocking layer to the active region. Numerical computations show that the Mg-doping decreases the valence band barrier for holes and thus enhances the hole transportation. The proposed depletion-region Mg-doping approach also increases the barrier height for electrons, which leads to a reduced electron overflow, while increasing the hole concentration in the p-GaN layer. Experimentally measured external quantum efficiency indicates that Mg-doping position is vitally important. The doping in or adjacent to the quantum well degrades the LED performance due to Mg diffusion, increasing the corresponding nonradiative recombination, which is well supported by the measured carrier lifetimes. The experimental results are well numerically reproduced by modifying the nonradiative recombination lifetimes, which further validate the effectiveness of our approach.

  12. Efficient acetone sensor based on Ni-doped ZnO nanostructures prepared by spray pyrolysis technique

    Science.gov (United States)

    Darunkar, Swapnil S.; Acharya, Smita A.

    2018-05-01

    Ni-doped ZnO thin film was prepared by home-built spray pyrolysis unit for the detection of acetone at 300°C. Scanning electron microscopic (SEM) images of as-developed thin film of undoped ZnO exhibits large quantity of spherical, non-agglomerated particles with uniform size while in Ni-doped ZnO, particles are quite non-uniform in nature. The particle size estimated by using image J are obtained to be around 20-200 nm. Ni-doping effect on band gaps are determined by UV-vis optical spectroscopy and band gap of Ni-doped ZnO is found to be 3.046 eV. Nickel doping exceptionally enhances the sensing response of ZnO as compared to undoped ZnO system. The major role of the Ni-doping is to create more active sites for chemisorbed oxygen on the surface of sensor and correspondingly, to improve the sensing response. The 6 at.% of Ni-doped ZnO exhibits the highest response (92%) for 100 ppm acetone at 300 °C.

  13. Exciton dynamics in an energy up-converting solid state system based on diphenylanthracene doped with platinum octaethylporphyrin

    Energy Technology Data Exchange (ETDEWEB)

    Karpicz, R., E-mail: renata.karpicz@ftmc.lt [Center for Physical Sciences and Technology, Savanoriu Ave. 231, LT-02300 Vilnius (Lithuania); Puzinas, S.; Gulbinas, V. [Center for Physical Sciences and Technology, Savanoriu Ave. 231, LT-02300 Vilnius (Lithuania); Vakhnin, A. [Institute of Physics, National Academy of Sciences of Ukraine, 03028 Kyiv (Ukraine); Kadashchuk, A. [Institute of Physics, National Academy of Sciences of Ukraine, 03028 Kyiv (Ukraine); IMEC, Kapeldreef 75, B-3001 Heverlee-Leuven (Belgium); Rand, B.P. [IMEC, Kapeldreef 75, B-3001 Heverlee-Leuven (Belgium); Department of Electrical Engineering and the Andlinger Center for Energy and the Environment, Princeton University, Princeton, NJ 08544 (United States)

    2014-01-31

    Highlights: • We study exciton dynamics by ultrafast spectroscopies in DPA:PtOEP host–guest films. • Aggregation of PtOEP affects considerably the triplet energy transfer to DPA host. • No significant triplet loss due to TTA occurs within PtOEP aggregates. • Triplet energy transfer from PtOEP to DPA is slow and thermally activated process. • The ISC time in PtOEP is shorter than 100 fs. - Abstract: Photophysics of composite solid films based on 9,10-diphenylanthracene (DPA) doped with Pt(II)octaethylporphyrin (PtOEP) has been investigated by means of transient absorption and luminescence spectroscopy. The DPA:PtOEP host:guest system is a benchmark for incoherent energy up-conversion via triplet fusion in solution and we focus here on photophysical processes of this system in solid films. The triplet energy transfer from PtOEP to DPA takes place during tens of ns, featuring a thermally activated behavior. This implies that, before being transferred to the host, triplets migrate within PtOEP aggregates, defining a rate limiting step for the overall energy transfer to DPA. In contrast to other porphyrin-based sensitizers, no significant triplet–triplet annihilation was found to happen during triplet migration within PtOEP aggregates, implying that such a triplet loss mechanism does not universally apply to porphyrin-based organometallic complexes.

  14. Multifunctional zirconium oxide doped chitosan based hybrid nanocomposites as bone tissue engineering materials.

    Science.gov (United States)

    Bhowmick, Arundhati; Jana, Piyali; Pramanik, Nilkamal; Mitra, Tapas; Banerjee, Sovan Lal; Gnanamani, Arumugam; Das, Manas; Kundu, Patit Paban

    2016-10-20

    This paper reports the development of multifunctional zirconium oxide (ZrO2) doped nancomposites having chitosan (CTS), organically modified montmorillonite (OMMT) and nano-hydroxyapatite (HAP). Formation of these nanocomposites was confirmed by various characterization techniques such as Fourier transform infrared spectroscopy and powder X-ray diffraction. Scanning electron microscopy images revealed uniform distribution of OMMT and nano-HAP-ZrO2 into CTS matrix. Powder XRD study and TEM study revealed that OMMT has partially exfoliated into the polymer matrix. Enhanced mechanical properties in comparison to the reported literature were obtained after the addition of ZrO2 nanoparticle into the nanocomposites. In rheological measurements, CMZH I-III exhibited greater storage modulus (G') than loss modulus (G″). TGA results showed that these nanocomposites are thermally more stable compare to pure CTS film. Strong antibacterial zone of inhibition and the lowest minimum inhibition concentration (MIC) value of these nanocomposites against bacterial strains proved that these materials have the ability to prevent bacterial infection in orthopedic implants. Compatibility of these nanocomposites with pH and blood of human body was established. It was observed from the swelling study that the swelling percentage was increased with decreasing the hydrophobic OMMT content. Human osteoblastic MG-63 cell proliferations were observed on the nanocomposites and cytocompatibility of these nanocomposites was also established. Moreover, addition of 5wt% OMMT and 5wt% nano-HAP-ZrO2 into 90wt% CTS matrix provides maximum tensile strength, storage modulus, aqueous swelling and cytocompatibility along with strong antibacterial effect, pH and erythrocyte compatibility. Copyright © 2016 Elsevier Ltd. All rights reserved.

  15. Cysteine detection using a high-fluorescence sensor based on a nitrogen-doped graphene quantum dot–mercury(II) system

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Zhenzhen; Gong, Yan; Fan, Zhefeng, E-mail: zhefengfan@126.com

    2016-07-15

    A novel and highly sensitive fluorescence sensor, which was based on the recovered fluorescence of a nitrogen-doped graphene quantum dot–Hg(II) system, was developed for cysteine detection. An easy, green, one-pot synthesis of nitrogen-doped graphene quantum dots was established by using citric acid and urea as carbon and nitrogen sources, respectively. The fluorescence of nitrogen-doped graphene quantum dots was significantly quenched by Hg(II) because of the efficient electron transfer between nitrogen-doped graphene quantum dots and Hg(II). Subsequently, fluorescence was recovered gradually upon cysteine addition to form a stable complex with Hg(II). The fluorescence sensor showed a response to cysteine within a wide concentration range of 0.05–30 μmol L{sup −1}, with a detection limit of 1.3 nmol L{sup −1}. The sensor was successfully applied to detect cysteine in honey and beer samples, with a recovery range of 98–105%.

  16. Photocatalytic degradation of rhodamine B, paracetamol and diclofenac sodium by supported titania-based catalysts from petrochemical residue: effect of doping with magnesium.

    Science.gov (United States)

    da Silva, William Leonardo; Lansarin, Marla Azário; Dos Santos, João Henrique Z; Silveira, Fernando

    2016-11-01

    Three different lots of a residual Ziegler-Natta catalyst slurry (bearing Ti and Mg) obtained from an industrial petrochemical plant were employed as sources for the photocatalyst supported on silica. The effect of additional magnesium (1.0-25.0 wt% Mg/SiO 2 ) on the photocatalytic properties of the doped materials was investigated. Doping the titania-based photocatalyst with Mg results in a shift in the absorption threshold toward the visible spectrum. The optical band gap energy of the bare supported photocatalyst was in the range of 2.5 eV and shifted to 1.72 eV after 25 wt% Mg doping. The systems were evaluated for the photodegradation of one dye (rhodamine B (RhB)) and two drugs (paracetamol and diclofenac sodium) either under ultraviolet (UV) (365 nm - UVA) or visible radiation, separately. Among the evaluated systems, doping with 25 wt% Mg afforded the highest degradation values for the target molecules under UV and visible radiation (i.e. 87%, 60% and 55% of the RhB, paracetamol and diclofenac under UV, respectively, and 82%, 48.3% and 48% under visible irradiation, respectively).

  17. Cysteine detection using a high-fluorescence sensor based on a nitrogen-doped graphene quantum dot–mercury(II) system

    International Nuclear Information System (INIS)

    Liu, Zhenzhen; Gong, Yan; Fan, Zhefeng

    2016-01-01

    A novel and highly sensitive fluorescence sensor, which was based on the recovered fluorescence of a nitrogen-doped graphene quantum dot–Hg(II) system, was developed for cysteine detection. An easy, green, one-pot synthesis of nitrogen-doped graphene quantum dots was established by using citric acid and urea as carbon and nitrogen sources, respectively. The fluorescence of nitrogen-doped graphene quantum dots was significantly quenched by Hg(II) because of the efficient electron transfer between nitrogen-doped graphene quantum dots and Hg(II). Subsequently, fluorescence was recovered gradually upon cysteine addition to form a stable complex with Hg(II). The fluorescence sensor showed a response to cysteine within a wide concentration range of 0.05–30 μmol L −1 , with a detection limit of 1.3 nmol L −1 . The sensor was successfully applied to detect cysteine in honey and beer samples, with a recovery range of 98–105%.

  18. An Approach to Solid-State Electrical Double Layer Capacitors Fabricated with Graphene Oxide-Doped, Ionic Liquid-Based Solid Copolymer Electrolytes.

    Science.gov (United States)

    Fattah, N F A; Ng, H M; Mahipal, Y K; Numan, Arshid; Ramesh, S; Ramesh, K

    2016-06-06

    Solid polymer electrolyte (SPE) composed of semi-crystalline poly (vinylidene fluoride-hexafluoropropylene) [P(VdF-HFP)] copolymer, 1-ethyl-3-methylimidazolium bis (trifluoromethyl sulphonyl) imide [EMI-BTI] and graphene oxide (GO) was prepared and its performance evaluated. The effects of GO nano-filler were investigated in terms of enhancement in ionic conductivity along with the electrochemical properties of its electrical double layer capacitors (EDLC). The GO-doped SPE shows improvement in ionic conductivity compared to the P(VdF-HFP)-[EMI-BTI] SPE system due to the existence of the abundant oxygen-containing functional group in GO that assists in the improvement of the ion mobility in the polymer matrix. The complexation of the materials in the SPE is confirmed in X-ray diffraction (XRD) and thermogravimetric analysis (TGA) studies. The electrochemical performance of EDLC fabricated with GO-doped SPE is examined using cyclic voltammetry and charge-discharge techniques. The maximum specific capacitance obtained is 29.6 F∙g -1 , which is observed at a scan rate of 3 mV/s in 6 wt % GO-doped, SPE-based EDLC. It also has excellent cyclic retention as it is able keep the performance of the EDLC at 94% even after 3000 cycles. These results suggest GO doped SPE plays a significant role in energy storage application.

  19. An Approach to Solid-State Electrical Double Layer Capacitors Fabricated with Graphene Oxide-Doped, Ionic Liquid-Based Solid Copolymer Electrolytes

    Directory of Open Access Journals (Sweden)

    N. F. A. Fattah

    2016-06-01

    Full Text Available Solid polymer electrolyte (SPE composed of semi-crystalline poly (vinylidene fluoride-hexafluoropropylene [P(VdF-HFP] copolymer, 1-ethyl-3-methylimidazolium bis (trifluoromethyl sulphonyl imide [EMI-BTI] and graphene oxide (GO was prepared and its performance evaluated. The effects of GO nano-filler were investigated in terms of enhancement in ionic conductivity along with the electrochemical properties of its electrical double layer capacitors (EDLC. The GO-doped SPE shows improvement in ionic conductivity compared to the P(VdF-HFP-[EMI-BTI] SPE system due to the existence of the abundant oxygen-containing functional group in GO that assists in the improvement of the ion mobility in the polymer matrix. The complexation of the materials in the SPE is confirmed in X-ray diffraction (XRD and thermogravimetric analysis (TGA studies. The electrochemical performance of EDLC fabricated with GO-doped SPE is examined using cyclic voltammetry and charge–discharge techniques. The maximum specific capacitance obtained is 29.6 F∙g−1, which is observed at a scan rate of 3 mV/s in 6 wt % GO-doped, SPE-based EDLC. It also has excellent cyclic retention as it is able keep the performance of the EDLC at 94% even after 3000 cycles. These results suggest GO doped SPE plays a significant role in energy storage application.

  20. Synthesis of polyaniline-based inks for inkjet printed devices: electrical characterization highlighting the effect of primary and secondary doping

    International Nuclear Information System (INIS)

    Chiolerio, Alessandro; Bocchini, Sergio; Porro, Samuele; Perrone, Denis; Fabrizio Pirri, Candido; Scaravaggi, Francesco; Beretta, Davide; Caironi, Mario

    2015-01-01

    Engineering applications for printed electronics demand solution processable electrically conductive materials, in the form of inks, to realize interconnections, piezoresistive pressure sensors, thermoresistive temperature sensors, and many other devices. Polyaniline is an intrinsically conductive polymer with modest electrical properties but clear advantages in terms of solubility and stability with temperature and in time. A comprehensive study, starting from its synthesis, primary doping, inkjet printing and secondary doping is presented, with the aim of elucidating the doping agent effects on its morphology, printability and electronic performance. (paper)

  1. Hole transport in c-plane InGaN-based green laser diodes

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Yang; Liu, Jianping, E-mail: jpliu2010@sinano.ac.cn; Tian, Aiqin; Zhang, Feng; Feng, Meixin; Hu, Weiwei; Zhang, Shuming; Ikeda, Masao; Li, Deyao; Zhang, Liqun; Yang, Hui [Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); School of Nano Technology and Nano Bionics, University of Science and Technology of China, Suzhou 215123 (China)

    2016-08-29

    Hole transport in c-plane InGaN-based green laser diodes (LDs) has been investigated by both simulations and experiments. It is found that holes can overflow from the green double quantum wells (DQWs) at high current density, which reduces carrier injection efficiency of c-plane InGaN-based green LDs. A heavily silicon-doped layer right below the green DQWs can effectively suppress hole overflow from the green DQWs.

  2. AN AMELIORATED DETECTION STATISTICS FOR ADAPTIVE MASK MEDIAN FILTRATION OF HEAVILY NOISED DIGITAL IMAGES

    Directory of Open Access Journals (Sweden)

    Geeta Hanji

    2016-11-01

    Full Text Available Noise reduction is an important area of research in image processing applications. The performance of the digital image noise filtering method primarily depends upon the accuracy of noise detection scheme. This paper presents an effective detector based, adaptive mask, median filtration of heavily noised digital images affected with fixed value (or salt and pepper impulse noise. The proposed filter presents a novel approach; an ameliorated Rank Ordered Absolute Deviation (ROAD statistics to judge whether the input pixel is noised or noise free. If a pixel is detected as corrupted, it is subjected to adaptive mask median filtration; otherwise, it is kept unchanged. Extensive experimental results and comparative performance evaluations demonstrate that the proposed filter outperforms the existing decision type, median based filters with powerful noise detectors in terms of objective performance measures and visual retrieviation accuracy.

  3. Impact of porous SiC-doped PVA based LDS layer on electrical parameters of Si solar cells

    Science.gov (United States)

    Kaci, S.; Rahmoune, R.; Kezzoula, F.; Boudiaf, Y.; Keffous, A.; Manseri, A.; Menari, H.; Cheraga, H.; Guerbous, L.; Belkacem, Y.; Chalal, R.; Bozetine, I.; Boukezzata, A.; Talbi, L.; Benfadel, K.; Ouadfel, M.-A.; Ouadah, Y.

    2018-06-01

    Nowadays, the advanced photon management is regarded as an area of intensive research investment. Ever since the most widely used commercial photovoltaic cells are fabricated with single gap semiconductors like silicon, photon management has offered opportunities to make better use of the photons, both inside and outside the single junction window. In this study, the impact of new down shifting layer on the photoelectrical parameters of silicon based solar cell was studied. An effort to enhance the photovoltaic performance of textured silicon solar cells through the application of porous SiC particles-doped polyvinyl alcohol (PVA) layers using the spin-coating technique, is reported. Current-voltage curves under artificial illumination were used to confirm the contribution of LDS (SiC-PVA) thin layers. Experiment results revealed that LDS based on SiC particles which were etched in HF/K2S2O8 solution at T = 80 °C under UV light of 254 nm exhibited the best solar cell photoelectrical parameters due to its strong photoluminescence.

  4. A novel fluorescence biosensor for sensitivity detection of tyrosinase and acid phosphatase based on nitrogen-doped graphene quantum dots.

    Science.gov (United States)

    Qu, Zhengyi; Na, Weidan; Liu, Xiaotong; Liu, Hua; Su, Xingguang

    2018-01-02

    In this paper, we developed a sensitive fluorescence biosensor for tyrosinase (TYR) and acid phosphatase (ACP) activity detection based on nitrogen-doped graphene quantum dots (N-GQDs). Tyrosine could be catalyzed by TYR to generate dopaquinone, which could efficiently quench the fluorescence of N-GQDs, and the degree of fluorescence quenching of N-GQDs was proportional to the concentration of TYR. In the presence of ACP, l-Ascorbic acid-2-phosphate (AAP) was hydrolyzed to generate ascorbic acid (AA), and dopaquinone was reduced to l-dopa, resulting in the fluorescence recovery of the quenched fluorescence by dopaquinone. Thus, a novel fluorescence biosensor for the detection of TYR and ACP activity based on N-GQDs was constructed. Under the optimized experimental conditions, the fluorescence intensity was linearly correlated with the concentration of TYR and ACP in the range of 0.43-3.85 U mL -1 and 0.04-0.7 mU mL -1 with a detection limit of 0.15 U mL -1 and 0.014 mU mL -1 , respectively. The feasibility of the proposed biosensor in real samples assay was also studied and satisfactory results were obtained. Copyright © 2017 Elsevier B.V. All rights reserved.

  5. A promising lightweight multicomponent microwave absorber based on doped barium hexaferrite/calcium titanate/multiwalled carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Afghahi, Seyyed Salman Seyyed [Imam Hossein University, Department of Materials Science and Engineering (Iran, Islamic Republic of); Jafarian, Mojtaba, E-mail: m.jafarian@srbiau.ac.ir [Islamic Azad University, Young Researchers and Elite Club, Science and Research Branch (Iran, Islamic Republic of); Atassi, Yomen [Higher Institute for Applied Sciences and Technology, Department of Applied Physics (Syrian Arab Republic)

    2016-07-15

    We present the design of a microwave absorber in the X band based on ternary nanocomposite of doped barium hexaferrite (Ba-M)/calcium titanate (CTO)/multiwall carbon nanotubes (MWCNTs) in epoxy matrix. The hydrothermal method has been used to synthesize Ba-M and CTO nanopowder. The phase identification has been investigated using XRD patterns. Scanning electron microscope, transmission electron microscope, vibrating sample magnetometer, and vector network analyzer are used to analyze the morphology of the different components and the magnetic, electromagnetic, and microwave absorption properties of the final composite absorbers, respectively. As far as we know, the design of this type of multicomponent microwave absorber has not been investigated before. The results reveal that the combination of these three components with their different loss mechanisms has a synergistic effect that enhances the attenuation properties of the final composite. The absorber of only 2.5-mm thickness and 35 wt% of loading ratio exhibits a minimum reflection loss of −43 dB at 10.2 GHz with a bandwidth of 3.6 GHz, while the corresponding absorber based on pure (Ba-M) shows a minimum reflection loss of −34 dB at 9.8 GHz with a bandwidth of 0.256 GHz and a thickness of 4 mm.Graphical Abstract.

  6. Dye sensitized solar cell based on environmental friendly eosin Y dye and Al doped titanium dioxide nano particles

    Science.gov (United States)

    Kulkarni, Swati S.; Bodkhe, Gajanan A.; Shirsat, Sumedh M.; Hussaini, S. S.; Shejwal, N. N.; Shirsat, Mahendra D.

    2018-03-01

    Present communication deals with the development of cost effective dye sensitized solar cell (DSSC) with eco-friendly materials. Eco-friendly Eosin Y dye was used to sensitize photo anode which was fabricated using undoped and Aluminium doped titanium dioxide (TiO2) nanoparticles. Undoped and Aluminium doped TiO2 nanoparticles were synthesized by simple and cost effective sol-gel method. Aluminium doped and undoped TiO2 nanoparticles were characterized using UV-visible, FT-IR spectroscopy, x-ray Diffraction, and Scanning Electron Micrograph with EDX. The photo-voltaic activity of the cell was studied under light irradiation of 100 milliwatt cm-2. Aluminium doped TiO2 nanoparticle photo electrode exhibits more than 60% increase in cell efficiency as compared to the undoped TiO2 nanoparticle photo electrode.

  7. Bulk Heterojunction versus Diffused Bilayer: The Role of Device Geometry in Solution p-Doped Polymer-Based Solar Cells.

    Science.gov (United States)

    Loiudice, Anna; Rizzo, Aurora; Biasiucci, Mariano; Gigli, Giuseppe

    2012-07-19

    We exploit the effect of molecular p-type doping of P3HT in diffused bilayer (DB) polymer solar cells. In this alternative device geometry, the p-doping is accomplished in solution by blending the F4-TCNQ with P3HT. The p-doping both increases the film conductivity and reduces the potential barrier at the interface with the electrode. This results in an excellent power conversion efficiency of 4.02%, which is an improvement of ∼48% over the p-doped standard bulk heterojunction (BHJ) device. Combined VOC-light intensity dependence measurements and Kelvin probe force microscopy reveal that the DB device configuration is particularly advantageous, if compared to the conventional BHJ, because it enables optimization of the donor and acceptor layers independently to minimize the effect of trapping and to fully exploit the improved transport properties.

  8. Hole doping and pressure effects on the II-II-V-based diluted magnetic semiconductor (Ba1-xKx)(Zn1-yMny)2As2

    International Nuclear Information System (INIS)

    Sun, F.; Zhao, G. Q.; Escanhoela, C. A. Jr.

    2017-01-01

    We investigate doping- and pressure-induced changes in the electronic state of Mn 3d and As 4p orbitals in II-II-V based diluted magnetic semiconductor (Ba_1_-_x,K_x)(Zn_1_-_y,Mn_y)_2As_2 to shed light into the mechanism of indirect exchange interactions leading to high ferromagnetic ordering temperature (T_c = 230 K in optimally doped samples). A suite of x-ray spectroscopy experiments (emission, absorption and dichroism) show that the emergence, and further enhancement of ferromagnetic interactions with increased hole doping into the As 4p band is accompanied by a decrease in local 3d spin density at Mn sites. This is a result of increasing Mn 3d - As 4p hybridization with hole doping which enhances indirect exchange interactions between Mn dopants and gives rise to induced magnetic polarization in As 4p states. On the contrary, application of pressure suppresses exchange interactions. While Mn Kβ emission spectra show a weak response of 3d state to pressure, clear As 4p band broadening (hole delocalization) is observed under pressure ultimately leading to loss of ferromagnetism concomitant with a semiconductor to metal transition. The pressure response of As 4p and Mn 3d states is intimately connected with the evolution of the As-As interlayer distance and the geometry of the MnAs_4 tetrahedral units, which we probed with X-ray diffraction. Our results indicate that hole doping increases the degree of covalency between the anion (As) p states and cation (Mn) d states in the MnA_s_4 tetrahedron, a crucial ingredient to promote indirect exchange interactions between Mn dopants and high T_c ferromagnetism. As a result, the instability of ferromagnetism and semiconducting state against pressure is mainly dictated by delocalization of anion p states.

  9. Thermal Conductivity and Specific Heat Capacity of Dodecylbenzenesulfonic Acid-Doped Polyaniline Particles—Water Based Nanofluid

    OpenAIRE

    Chew, Tze; Daik, Rusli; Hamid, Muhammad

    2015-01-01

    Nanofluid has attracted great attention due to its superior thermal properties. In this study, chemical oxidative polymerization of aniline was carried out in the presence of dodecylbenzenesulfonic acid (DBSA) as a dopant. Particles of DBSA-doped polyaniline (DBSA-doped PANI) with the size range of 15 to 50 nm were obtained, as indicated by transmission electron microscope (TEM). Results of ultra violet-visible (UV-Vis) absorption and Fourier transform infrared (FTIR) spectroscopies as well ...

  10. Epitaxial Sb-doped SnO_2 and Sn-doped In_2O_3 transparent conducting oxide contacts on GaN-based light emitting diodes

    International Nuclear Information System (INIS)

    Tsai, Min-Ying; Bierwagen, Oliver; Speck, James S.

    2016-01-01

    We demonstrate the growth of epitaxial (100)-oriented, rutile Sb-doped SnO_2 (ATO) and (111)-oriented, cubic Sn-doped In_2O_3 (ITO) transparent conducting oxide (TCO) contacts on top of an InGaN/GaN(0001) light emitting diode (LED) by plasma-assisted molecular beam epitaxy (PAMBE). Both oxides form rotational domains. The in-plane epitaxial alignment of the two ITO(111) rotational domains to the GaN(0001) was: GaN [21-10]|| ITO_D_o_m_a_i_n_1[‐ 211]|| ITO_D_o_m_a_i_n_2[‐ 1‐12]. A growth temperature as low as 600 °C was necessary to realize a low contact resistance between ATO and the top p-GaN layer of the LED but resulted in non-optimal resistivity (3.4 × 10"− "3 Ω cm) of the ATO. The current–voltage characteristics of a processed LED, however, were comparable to that of a reference LED with a standard electron-beam evaporated ITO top contact. At short wavelengths, the optical absorption of ATO was lower than that of ITO, which is beneficial even for blue LEDs. Higher PAMBE growth temperatures resulted in lower resistive ATO but higher contact resistance to the GaN, likely by the formation of an insulating Ga_2O_3 interface layer. The ITO contact grown by PAMBE at 600 °C showed extremely low resistivity (10"−"4 Ω cm) and high crystalline and morphological quality. These proof-of-principle results may lead to the development of epitaxial TCO contacts with low resistivity, well-defined interfaces to the p-GaN to help minimize contact losses, and enable further epitaxy on top of the TCO. - Highlights: • Plasma-assisted molecular beam epitaxy of SnO_2:Sb (ATO) and In_2O_3:Sn (ITO) contacts • Working light emitting diodes processed with the ATO contact on the top p-GaN layer • Low growth temperature ensures low contact resistance (limiting interface reaction). • ITO showed significantly better structural and transport properties than ATO. • ATO showed higher optical transmission at short wavelengths than ITO.

  11. Sr-doped nanowire modification of Ca-Si-based coatings for improved osteogenic activities and reduced inflammatory reactions

    Science.gov (United States)

    Li, Kai; Hu, Dandan; Xie, Youtao; Huang, Liping; Zheng, Xuebin

    2018-02-01

    Biomedical coatings for orthopedic implants should facilitate osseointegration and mitigate implant-induced inflammatory reactions. In our study, Ca-Si coatings with Sr-containing nanowire-like structures (NW-Sr-CS) were achieved via hydrothermal treatment. In order to identify the effect of nanowire-like topography and Sr dopant on the biological properties of Ca-Si-based coatings, the original Ca-Si coating, Ca-Si coatings modified with nanoplate (NP-CS) and similar nanowire-like structure (NW-CS) were fabricated as the control. Surface morphology, phase composition, surface area, zeta potential and ion release of these coatings were characterized. The in vitro osteogenic activities and immunomodulatory properties were evaluated with bone marrow stromal cells (BMSCs) and RAW 264.7 cells, a mouse macrophage cell line. Compared with the CS and NP-CS coatings, the NW-CS coating possessed a larger surface area and pore volume, beneficial protein adsorption, up-regulated the expression levels of integrin β1, Vinculin and focal adhesion kinase and promoted cell spreading. Furthermore, the NW-CS coating significantly enhanced the osteogenic differentiation and mineralization as indicated by the up-regulation of ALP activity, mineralized nodule formation and osteoblastogenesis-related gene expression. With the introduction of Sr, the NW-Sr-CS coatings exerted a greater effect on the BMSC proliferation rate, calcium sensitive receptor gene expression as well as PKC and ERK1/2 phosphorylation. In addition, the Sr-doped coatings significantly up-regulated the ratio of OPG/RANKL in the BMSCs. The NW-Sr-CS coatings could modulate the polarization of macrophages towards the wound-healing M2 phenotype, reduce the mRNA expression levels of pro-inflammatory cytokines (TNF-α, IL-1β, IL-6) and enhance anti-inflammatory cytokines (IL-1ra, IL-10). The Sr-doped nanowire modification may be a valuable approach to enhance osteogenic activities and reduce inflammatory reactions.

  12. Sol–gel-based silver nanoparticles-doped silica – Polydiphenylamine nanocomposite for micro-solid-phase extraction

    Energy Technology Data Exchange (ETDEWEB)

    Bagheri, Habib, E-mail: bagheri@sharif.edu; Banihashemi, Solmaz

    2015-07-30

    A nanocomposite of silica-polydiphenylamine doped with silver nanoparticles (Ag–SiO{sub 2}-PDPA) was successfully synthesized by the sol–gel process. For its preparation, PDPA was mixed with butanethiol capped Ag nanoparticles (NPs) and added to the silica sol solution. The Ag NPs were stabilized as a result of their adsorption on the SiO{sub 2} spheres. The surface characteristic of nanocomposite was investigated using scanning electron microscopy (SEM). In this work the Ag–SiO{sub 2}-PDPA nanocomposite was employed as an efficient sorbent for micro-solid-phase extraction (μ-SPE) of some selected pesticides. An amount of 15 mg of the prepared sorbent was used to extract and determine the representatives from organophosphorous, organochlorine and aryloxyphenoxy propionic acids from aqueous samples. After the implementation of extraction process, the analytes were desorbed by methanol and determined using gas chromatography–mass spectrometry (GC–MS). Important parameters influencing the extraction and desorption processes such as pH of sample solution, salting out effect, type and volume of the desorption solvent, the sample loading and eluting flow rates along with the sample volume were experimentally optimized. Limits of detection (LODs) and the limits of quantification (LOQs) were in the range of 0.02–0.05 μg L{sup −1} and 0.1–0.2 μg L{sup −1}, respectively, using time scheduled selected ion monitoring (SIM) mode. The relative standard deviation percent (RSD %) with four replicates was in the range of 6–10%. The applicability of the developed method was examined by analyzing different environmental water samples and the relative recovery (RR %) values for the spiked water samples were found to be in the range of 86–103%. - Highlights: • A sol–gel-based silver nanoparticles doped silica-polydiphenylamine nanocomposite was synthesized. • The sorbent was applied to micro-solid-phase extraction of some selected pesticides in water

  13. Electrodeposition of ZnO-doped films as window layer for Cd-free CIGS-based solar cells

    Science.gov (United States)

    Tsin, Fabien; Vénérosy, Amélie; Hildebrandt, Thibaud; Hariskos, Dimitrios; Naghavi, Negar; Lincot, Daniel; Rousset, Jean

    2016-02-01

    The Cu(In,Ga)Se2 (CIGS) thin film solar cell technology has made a steady progress within the last decade reaching efficiency up to 22.3% on laboratory scale, thus overpassing the highest efficiency for polycrystalline silicon solar cells. High efficiency CIGS modules employ a so-called buffer layer of cadmium sulfide CdS deposited by Chemical Bath Deposition (CBD), which presence and Cd-containing waste present some environmental concerns. A second potential bottleneck for CIGS technology is its window layer made of i-ZnO/ZnO:Al, which is deposited by sputtering requiring expensive vacuum equipment. A non-vacuum deposition of transparent conductive oxide (TCO) relying on simpler equipment with lower investment costs will be more economically attractive, and could increase competitiveness of CIGS-based modules with the mainstream silicon-based technologies. In the frame of Novazolar project, we have developed a low-cost aqueous solution photo assisted electrodeposition process of the ZnO-based window layer for high efficiency CIGS-based solar cells. The window layer deposition have been first optimized on classical CdS buffer layer leading to cells with efficiencies similar to those measured with the sputtered references on the same absorber (15%). The the optimized ZnO doped layer has been adapted to cadmium free devices where the CdS is replaced by chemical bath deposited zinc oxysulfide Zn(S,O) buffer layer. The effect of different growth parameters has been studied on CBD-Zn(S,O)-plated co-evaporated Cu(In,Ga)Se2 substrates provided by the Zentrum für Sonnenenergie-und Wasserstoff-Forschung (ZSW). This optimization of the electrodeposition of ZnO:Cl on CIGS/Zn(S,O) stacks led to record efficiency of 14%, while the reference cell with a sputtered (Zn,Mg)O/ZnO:Al window layer has an efficiency of 15.2%.

  14. Analyses of ionic conductivity and dielectric behavior of solid polymer electrolyte based 2-hydroxyethyl cellulose doped ammonium nitrate plasticized with ethylene carbonate

    Science.gov (United States)

    Hafiza, M. N.; Isa, M. I. N.

    2017-09-01

    A solid polymer electrolyte (SPE) based 2-hydroxyethyl cellulose (2-HEC) doped ammonium nitrate (NH4NO3) plasticized with ethylene carbonate (EC) has been investigated using electrical impedance spectroscopy (EIS). The highest ionic conductivity of (1.17±0.01) × 10-3 Scm-1 was obtained for 2-HEC-NH4NO3 plasticized with 16 wt.% EC. Dielectric and modulus study showed non-Debye type of 2-HEC-NH4NO3-EC SPE.

  15. Dual-wavelength green laser with a 4.5 THz frequency difference based on self-frequency- doubling in Nd3+ -doped aperiodically poled lithium niobate.

    Science.gov (United States)

    Maestre, H; Torregrosa, A J; Fernández-Pousa, C R; Rico, M L; Capmany, J

    2008-05-01

    We report a dual-wavelength continuous-wave laser at 542.4 and 546.8 nm based on an Nd(3+)-doped aperiodically poled lithium niobate crystal. Two fundamental infrared (IR) wavelengths at 1084.8 and 1093.6 nm are simultaneously oscillated and self-frequency-doubled to green. The aperiodic domain distribution patterned in the crystal allows for quasi-phase matched self-frequency-doubling of both IR fundamentals while avoiding their sum-frequency mixing.

  16. Nonlinear Polarization Rotation-Based Mode-Locked Erbium-Doped Fiber Laser with Three Switchable Operation States

    International Nuclear Information System (INIS)

    Tiu Zian Cheak; Tan Sin Jin; Zarei Arman; Ahmad Harith; Harun Sulaiman Wadi

    2014-01-01

    A simple mode-locked erbium-doped fiber laser (EDFL) with three switchable operation states is proposed and demonstrated based on nonlinear polarization rotation. The EDFL generates a stable square pulse at a third harmonic pulse repetition rate of 87 kHz as the 1480 nm pump power increases from the threshold of 17.5 mW to 34.3 mW. The square pulse duration increases from 105 ns to 245 ns as the pump power increases within this region. The pulse operation switches to the second operation state as the pump power is varied from 48.2 mW to 116.7 mW. The laser operates at a fundamental repetition rate of 29 kHz with a fixed pulse width of 8.5 μs within the pump power region. At a pump power of 116.7 mW, the average output power is 3.84 mW, which corresponds to the pulse energy of 131.5 nJ. When the pump power continues to increase, the pulse train experiences unstable oscillation before it reaches the third stable operation state within a pump power region of 138.9 mW to 145.0 mW. Within this region, the EDFL produces a fixed pulse width of 2.8 μs and a harmonic pulse repetition rate of 58 kHz. (fundamental areas of phenomenology(including applications))

  17. Effect of indium low doping in ZnO based TFTs on electrical parameters and bias stress stability

    Energy Technology Data Exchange (ETDEWEB)

    Cheremisin, Alexander B., E-mail: acher612@gmail.com; Kuznetsov, Sergey N.; Stefanovich, Genrikh B. [Physico-Technical Department, Petrozavodsk State University, Petrozavodsk 185910 (Russian Federation)

    2015-11-15

    Some applications of thin film transistors (TFTs) need the bottom-gate architecture and unpassivated channel backside. We propose a simple routine to fabricate indium doped ZnO-based TFT with satisfactory characteristics and acceptable stability against a bias stress in ambient room air. To this end, a channel layer of 15 nm in thickness was deposited on cold substrate by DC reactive magnetron co-sputtering of metal Zn-In target. It is demonstrated that the increase of In concentration in ZnO matrix up to 5% leads to negative threshold voltage (V{sub T}) shift and an increase of field effect mobility (μ) and a decrease of subthreshold swing (SS). When dopant concentration reaches the upper level of 5% the best TFT parameters are achieved such as V{sub T} = 3.6 V, μ = 15.2 cm{sup 2}/V s, SS = 0.5 V/dec. The TFTs operate in enhancement mode exhibiting high turn on/turn off current ratio more than 10{sup 6}. It is shown that the oxidative post-fabrication annealing at 250{sup o}C in pure oxygen and next ageing in dry air for several hours provide highly stable operational characteristics under negative and positive bias stresses despite open channel backside. A possible cause of this effect is discussed.

  18. Origin of the non-monotonic variance of Tc in the 1111 iron based superconductors with isovalent doping

    Science.gov (United States)

    Usui, Hidetomo; Suzuki, Katsuhiro; Kuroki, Kazuhiko

    2015-01-01

    Motivated by recent experimental investigations of the isovalent doping iron-based superconductors LaFe(AsxP1-x)O1-yFy and NdFe(AsxP1-x)O1-yFy, we theoretically study the correlation between the local lattice structure, the Fermi surface, the spin fluctuation-mediated superconductivity, and the composition ratio. In the phosphides, the dXZ and dYZ orbitals barely hybridize around the Γ point to give rise to two intersecting ellipse shape Fermi surfaces. As the arsenic content increases and the Fe-As-Fe bond angle is reduced, the hybridization increases, so that the two bands are mixed to result in concentric inner and outer Fermi surfaces, and the orbital character gradually changes to dxz and dyz, where x–y axes are rotated by 45 degrees from X–Y. This makes the orbital matching between the electron and hole Fermi surfaces better and enhances the spin fluctuation within the dxz/yz orbitals. On the other hand, the hybridization splits the two bands, resulting in a more dispersive inner band. Hence, there is a trade-off between the density of states and the orbital matching, thereby locally maximizing the dxz/yz spin fluctuation and superconductivity in the intermediate regime of As/P ratio. The consistency with the experiment strongly indicate the importance of the spin fluctuation played in this series of superconductors. PMID:26073071

  19. (V,Nb)-doped half Heusler alloys based on {Ti,Zr,Hf}NiSn with high ZT

    International Nuclear Information System (INIS)

    Rogl, G.; Sauerschnig, P.; Rykavets, Z.; Romaka, V.V.; Heinrich, P.; Hinterleitner, B.; Grytsiv, A.; Bauer, E.; Rogl, P.

    2017-01-01

    Half Heusler alloys are among the most promising materials for thermoelectric generators as they can be used in a wide temperature range and their starting materials are abundant and cheap, the latter as long as no hafnium is involved. For Sb-doped Ti 0.5 Zr 0.25 Hf 0.25 NiSn Sakurada and Shutoh in 2008 have published ZT max  = 1.5 at 690 K, a value that hitherto was never reproduced independently. In this paper we successfully prepared Ti 0.5 Zr 0.25 Hf 0.25 NiSn with ZT max  = 1.5, however, at higher temperature (825 K). As the main goal is to produce hafnium – free half Heusler alloys, we investigated the influence of niobium or vanadium dopants on Ti x Zr 1−x NiSn 0.98 Sb 0.02 , reaching ZTs > 1.2 and thermal-electric conversion efficiencies up to 13.1%. For Hf-free n-type TiNiSn-based half Heusler alloys these values are unsurpassed. In order to further improve our thermoelectric materials our study is completed by electrical resistivity and thermal conductivity data in the low temperature range but also by mechanical properties (elastic moduli, hardness) at room temperature. The electrical properties have been discussed in comparison with DFT calculations.

  20. Response of gadolinium doped liquid scintillator to charged particles: measurement based on intrinsic U/Th contamination

    Science.gov (United States)

    Du, Q.; Lin, S. T.; He, H. T.; Liu, S. K.; Tang, C. J.; Wang, L.; Wong, H. T.; Xing, H. Y.; Yue, Q.; Zhu, J. J.

    2018-04-01

    A measurement is reported for the response to charged particles of a liquid scintillator named EJ-335 doped with 0.5% gadolinium by weight. This liquid scintillator was used as the detection medium in a neutron detector. The measurement is based on the in-situ α-particles from the intrinsic Uranium and Thorium contamination in the scintillator. The β–α and the α–α cascade decays from the U/Th decay chains were used to select α-particles. The contamination levels of U/Th were consequently measured to be (5.54±0.15)× 10‑11 g/g, (1.45±0.01)× 10‑10 g/g and (1.07±0.01)× 10‑11 g/g for 232Th, 238U and 235U, respectively, assuming secular equilibrium. The stopping power of α-particles in the liquid scintillator was simulated by the TRIM software. Then the Birks constant, kB, of the scintillator for α-particles was determined to be (7.28±0.23) mg/(cm2ṡMeV) by Birks' formulation. The response for protons is also presented assuming the kB constant is the same as for α-particles.

  1. Minor-Cu doped soft magnetic Fe-based FeCoBCSiCu amorphous alloys with high saturation magnetization

    Science.gov (United States)

    Li, Yanhui; Wang, Zhenmin; Zhang, Wei

    2018-05-01

    The effects of Cu alloying on the amorphous-forming ability (AFA) and magnetic properties of the P-free Fe81Co5B11C2Si1 amorphous alloy were investigated. Addition of ≤ 1.0 at.% Cu enhances the AFA of the base alloy without significant deterioration of the soft magnetic properties. The Fe80.5Co5B11C2Si1Cu0.5 alloy with the largest critical thickness for amorphous formation of ˜35 μm possesses a high saturation magnetization (Bs) of ˜1.78 T, low coercivity of ˜14.6 A/m, and good bending ductility upon annealing in a wide temperature range of 513-553 K with maintaining the amorphous state. The fabrication of the new high-Fe-content Fe-Co-B-C-Si-Cu amorphous alloys by minor doping of Cu gives a guideline to developing high Bs amorphous alloys with excellent AFA.

  2. A novel CuO-N-doped graphene nanocomposite-based hybrid electrode for the electrochemical detection of glucose

    Science.gov (United States)

    Felix, Sathiyanathan; Kollu, Pratap; Jeong, Soon Kwan; Grace, Andrews Nirmala

    2017-10-01

    We report a catalyst of N-doped graphene CuO nanocomposite, for the non-enzymatic electrocatalytic oxidation of glucose. The hybrid nanocomposite was synthesized by copper sulfate, cetyl ammonium bromide and graphite as starting materials. The synthesized composites were characterized with the techniques like X-ray diffraction, field emission scanning electron microscopy, transmission electron microscope to study the crystalline phase and morphological structure. Based on this composite, a non-enzymatic glucose sensor was constructed. Cyclic voltammetry and chronoamperometry methods were done to investigate the electrocatalytic properties of glucose in alkaline medium. For glucose detection, the fabricated sensor showed a linear response over a wide range of concentration from 3 to 1000 µM, with sensitivity of 2365.7 µA mM-1 cm-2 and a fast response time of 5 s. The designed sensor exhibited negligible current response to the normal concentration of common interferents in the presence of glucose. All these favorable advantages of the fabricated glucose sensor suggest that it may have good potential application in biological samples, food and other related areas.

  3. Study of quantum dot based on tin/yttrium mixed oxide doped with terbium to be used as biomarker

    International Nuclear Information System (INIS)

    Paganini, Paula P.; Felinto, Maria Claudia F.C.; Kodaira, Claudia A.; Brito, Hermi F.; Nunes, Luiz Antonio O.

    2009-01-01

    Quantum dots (semiconductors nanocrystals) have brought a promising field to develop a new generation of luminescent biomarkers. The use of lanthanides ions as luminescent markers has many advantages, for example a security method, low cost, high specificity and also the luminescence can be promptly measured with high sensibility and accuracy. These luminescent dots are functionalized with biomolecules. For the luminophore particle to be connect with biologicals molecules (for example covalent antibody) is necessary a previous chemical treatment to modify luminophore particle surface and this process is called functionalization. A prior chemical treatment with changes on the surface luminophore particle is necessary to couple the luminophore to biological molecules. This process can be used as coating which can protect these particles from being dissolved by acid as well as provide functional groups for biological conjugation. This work presents a photoluminescence study of nanoparticles based on tin/yttrium mixed oxides doped with terbium (SnO 2 /Y 2 O 3 :Tb 3+ ), synthesized by coprecipitation method. The nanoparticles were submitted to thermal treatment and characterized by X-Ray Powder Diffraction (XRD) that showed cassiterite phase formation and the influence of thermal treatment on nanoparticles structures. These nanoparticles going to be functionalized with a natural polysaccharide (chitosan) in order to form microspheres. These microspheres going to be irradiated with gamma radiation to sterilization and it can be evaluated if the nanoparticles are resistant to irradiation and they do not lose functionality with this process. (author)

  4. Enriched Boron-Doped Amorphous Selenium Based Position-Sensitive Solid-State Thermal Neutron Detector for MPACT Applications

    Energy Technology Data Exchange (ETDEWEB)

    Mandal, Krishna [Univ. of South Carolina, Columbia, SC (United States)

    2017-09-29

    High-efficiency thermal neutron detectors with compact size, low power-rating and high spatial, temporal and energy resolution are essential to execute non-proliferation and safeguard protocols. The demands of such detector are not fully covered by the current detection system such as gas proportional counters or scintillator-photomultiplier tube combinations, which are limited by their detection efficiency, stability of response, speed of operation, and physical size. Furthermore, world-wide shortage of 3He gas, required for widely used gas detection method, has further prompted to design an alternative system. Therefore, a solid-state neutron detection system without the requirement of 3He will be very desirable. To address the above technology gap, we had proposed to develop new room temperature solidstate thermal neutron detectors based on enriched boron (10B) and enriched lithium (6Li) doped amorphous Se (As- 0.52%, Cl 5 ppm) semiconductor for MPACT applications. The proposed alloy materials have been identified for its many favorable characteristics - a wide bandgap (~2.2 eV at 300 K) for room temperature operation, high glass transition temperature (tg ~ 85°C), a high thermal neutron cross-section (for boron ~ 3840 barns, for lithium ~ 940 barns, 1 barn = 10-24 cm2), low effective atomic number of Se for small gamma ray sensitivity, and high radiation tolerance due to its amorphous structure.

  5. A high energy and power sodium-ion hybrid capacitor based on nitrogen-doped hollow carbon nanowires anode

    Science.gov (United States)

    Li, Dongdong; Ye, Chao; Chen, Xinzhi; Wang, Suqing; Wang, Haihui

    2018-04-01

    The sodium ion hybrid capacitor (SHC) has been attracting much attention. However, the SHC's power density is significantly confined to a low level due to the sluggish ion diffusion in the anode. Herein, we propose to use an electrode with a high double layer capacitance as the anode in the SHC instead of insertion anodes. To this aim, nitrogen doped hollow carbon nanowires (N-HCNWs) with a high specific surface area are prepared, and the high capacitive contribution during the sodium ion storage process is confirmed by a series of electrochemical measurements. A new SHC consisting of a N-HCNW anode and a commercial active carbon (AC) cathode is fabricated for the first time. Due to the hybrid charge storage mechanism combining ion insertion and capacitive process, the as-fabricated SHC strikes a balance between the energy density and power density, a energy density of 108 Wh kg-1 and a power density of 9 kW kg-1 can be achieved, which overwhelms the electrochemical performances of most reported AC-based SHCs.

  6. Enriched Boron-Doped Amorphous Selenium Based Position-Sensitive Solid-State Thermal Neutron Detector for MPACT Applications

    International Nuclear Information System (INIS)

    Mandal, Krishna

    2017-01-01

    High-efficiency thermal neutron detectors with compact size, low power-rating and high spatial, temporal and energy resolution are essential to execute non-proliferation and safeguard protocols. The demands of such detector are not fully covered by the current detection system such as gas proportional counters or scintillator-photomultiplier tube combinations, which are limited by their detection efficiency, stability of response, speed of operation, and physical size. Furthermore, world-wide shortage of 3 He gas, required for widely used gas detection method, has further prompted to design an alternative system. Therefore, a solid-state neutron detection system without the requirement of 3 He will be very desirable. To address the above technology gap, we had proposed to develop new room temperature solidstate thermal neutron detectors based on enriched boron ( 10 B) and enriched lithium ( 6 Li) doped amorphous Se (As- 0.52%, Cl 5 ppm) semiconductor for MPACT applications. The proposed alloy materials have been identified for its many favorable characteristics - a wide bandgap (~2.2 eV at 300 K) for room temperature operation, high glass transition temperature (t g ~ 85°C), a high thermal neutron cross-section (for boron ~ 3840 barns, for lithium ~ 940 barns, 1 barn = 10 -24 cm 2 ), low effective atomic number of Se for small gamma ray sensitivity, and high radiation tolerance due to its amorphous structure.

  7. Ultra-photo-stable coherent random laser based on liquid waveguide gain channels doped with boehmite nanosheets

    Science.gov (United States)

    Zhang, Hua; Zhang, Hong; Yang, Chao; Dai, Jiangyun; Yin, Jiajia; Xue, Hongyan; Feng, Guoying; Zhou, Shouhuan

    2018-02-01

    Construction of ultra-photo-stable coherent random laser based on liquid waveguide gain channels doped with boehmite nanosheets has been demonstrated. An Al plate uniformly coated with boehmite nanosheets was prepared by an alkali-treatment method and used as a scattering surface for the coherent random laser. Microcavity may be formed between these boehmite nanosheets owing to the strong optical feedback induced by the multiple light scattering. Many sharp peaks are observed in the emission spectra, and their laser thresholds are different, which confirms the feedback mechanism is coherent. The linewidth of the main peak at 571.74 nm is 0.28 nm, and the threshold of the main peak is about 4.96 mJ/cm2. Due to the fluidity of liquid waveguide gain medium, the photostability of this coherent random laser is better than the conventional solid state dye random lasers. The emission direction is well constrained by the waveguide effect within a certain angular range (±30°). This kind of coherent random laser can be applied in optical fluid lasers and photonic devices.

  8. Facilitating political decisions using species distribution models to assess restoration measures in heavily modified estuaries.

    Science.gov (United States)

    Heuner, Maike; Weber, Arnd; Schröder, Uwe; Kleinschmit, Birgit; Schröder, Boris

    2016-09-15

    The European Water Framework Directive requires a good ecological potential for heavily modified water bodies. This standard has not been reached for most large estuaries by 2015. Management plans for estuaries fall short in linking implementations between restoration measures and underlying spatial analyses. The distribution of emergent macrophytes - as an indicator of habitat quality - is here used to assess the ecological potential. Emergent macrophytes are capable of settling on gentle tidal flats where hydrodynamic stress is comparatively low. Analyzing their habitats based on spatial data, we set up species distribution models with 'elevation relative to mean high water', 'mean bank slope', and 'length of bottom friction' from shallow water up to the vegetation belt as key predictors representing hydrodynamic stress. Effects of restoration scenarios on habitats were assessed applying these models. Our findings endorse species distribution models as crucial spatial planning tools for implementing restoration measures in modified estuaries. Copyright © 2016 Elsevier Ltd. All rights reserved.

  9. Effects of disorder on the intrinsically hole-doped iron-based superconductor KC a2F e4A s4F2 by cobalt substitution

    Science.gov (United States)

    Ishida, Junichi; Iimura, Soshi; Hosono, Hideo

    2017-11-01

    In this paper, the effects of cobalt substitution on the transport and electronic properties of the recently discovered iron-based superconductor KC a2F e4A s4F2 , with Tc=33 K , are reported. This material is an unusual superconductor showing intrinsic hole conduction (0.25 holes /F e2 + ). Upon doping of Co, the Tc of KC a2(Fe1-xC ox) 4A s4F2 gradually decreased, and bulk superconductivity disappeared when x ≥0.25 . Conversion of the primary carrier from p type to n type upon Co-doping was clearly confirmed by Hall measurements, and our results are consistent with the change in the calculated Fermi surface. Nevertheless, neither spin density wave (SDW) nor an orthorhombic phase, which are commonly observed for nondoped iron-based superconductors, was observed in the nondoped or electron-doped samples. The electron count in the 3 d orbitals and structural parameters were compared with those of other iron-based superconductors to show that the physical properties can be primarily ascribed to the effects of disorder.

  10. Antimony segregation in Ge and formation of n-type selectively doped Ge films in molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Yurasov, D. V., E-mail: Inquisitor@ipm.sci-nnov.ru; Antonov, A. V.; Drozdov, M. N.; Schmagin, V. B.; Novikov, A. V. [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhni Novgorod, 23 Prospekt Gagarina, 603950 Nizhny Novgorod (Russian Federation); Spirin, K. E. [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation)

    2015-10-14

    Antimony segregation in Ge(001) films grown by molecular beam epitaxy was studied. A quantitative dependence of the Sb segregation ratio in Ge on growth temperature was revealed experimentally and modeled theoretically taking into account both the terrace-mediated and step-edge-mediated segregation mechanisms. A nearly 5-orders-of-magnitude increase in the Sb segregation ratio in a relatively small temperature range of 180–350 °C was obtained, which allowed to form Ge:Sb doped layers with abrupt boundaries and high crystalline quality using the temperature switching method that was proposed earlier for Si-based structures. This technique was employed for fabrication of different kinds of n-type Ge structures which can be useful for practical applications like heavily doped n{sup +}-Ge films or δ-doped layers. Estimation of the doping profiles sharpness yielded the values of 2–5 nm per decade for the concentration gradient at the leading edge and 2–3 nm for the full-width-half-maximum of the Ge:Sb δ-layers. Electrical characterization of grown Ge:Sb structures revealed nearly full electrical activation of Sb atoms and the two-dimensional nature of charge carrier transport in δ-layers.

  11. Doping of wide-bandgap titanium-dioxide nanotubes: optical, electronic and magnetic properties

    Science.gov (United States)

    Alivov, Yahya; Singh, Vivek; Ding, Yuchen; Cerkovnik, Logan Jerome; Nagpal, Prashant

    2014-08-01

    Doping semiconductors is an important step for their technological application. While doping bulk semiconductors can be easily achieved, incorporating dopants in semiconductor nanostructures has proven difficult. Here, we report a facile synthesis method for doping titanium-dioxide (TiO2) nanotubes that was enabled by a new electrochemical cell design. A variety of optical, electronic and magnetic dopants were incorporated into the hollow nanotubes, and from detailed studies it is shown that the doping level can be easily tuned from low to heavily-doped semiconductors. Using desired dopants - electronic (p- or n-doped), optical (ultraviolet bandgap to infrared absorption in co-doped nanotubes), and magnetic (from paramagnetic to ferromagnetic) properties can be tailored, and these technologically important nanotubes can be useful for a variety of applications in photovoltaics, display technologies, photocatalysis, and spintronic applications.Doping semiconductors is an important step for their technological application. While doping bulk semiconductors can be easily achieved, incorporating dopants in semiconductor nanostructures has proven difficult. Here, we report a facile synthesis method for doping titanium-dioxide (TiO2) nanotubes that was enabled by a new electrochemical cell design. A variety of optical, electronic and magnetic dopants were incorporated into the hollow nanotubes, and from detailed studies it is shown that the doping level can be easily tuned from low to heavily-doped semiconductors. Using desired dopants - electronic (p- or n-doped), optical (ultraviolet bandgap to infrared absorption in co-doped nanotubes), and magnetic (from paramagnetic to ferromagnetic) properties can be tailored, and these technologically important nanotubes can be useful for a variety of applications in photovoltaics, display technologies, photocatalysis, and spintronic applications. Electronic supplementary information (ESI) available: See DOI: 10.1039/c4nr02417f

  12. Ultra-high Rates and Reversible Capacity of Li-S Battery with a Nitrogen-doping Conductive Lewis Base Matrix

    International Nuclear Information System (INIS)

    Cao, Yong; Li, Xi-long; Zheng, Ming-sen; Yang, Mao-ping; Yang, Xu-lai; Dong, Quan-feng

    2016-01-01

    Highlights: • A polypyrrole/reduced graphene oxide (PPy/rGO) composite was prepared from in-situ hybridization of graphene oxide and pyrrole without additional oxidant. • Nitrogen doped graphene (NG) was obtained from the calcination of the PPy/rGO composite under 1500 °C and was confirmed with abundant pyridinic type nitrogen doping. • NG was employed as a conductive Lewis base matrix of sulfur cathode and the obtained composite cathode exhibited ultra-high rates and reversible capacity. • The excellent electrochemical performance can be attributed to the efficient adsorption of Li 2 S n (n=4-8) on the pyridinic-N enriched NG surface. - Abstract: To improve the electrochemical performance of lithium sulfur batteries, a conductive Lewis base matrix, nitrogen doped graphene (NG), was prepared here through a facile strategy of annealing a polypyrrole/reduced graphene oxide composite. The obtained NG was demonstrated with enriched pyridinic-N doping and was employed as the matrix of sulfur cathode with ultra-high rates, reversible capacity and high coulombic efficiency. The improved performance can be attributed to the high conductivity of the NG and the enhanced adsorption energy of Li 2 S n (n=4-8) on the NG surface. The NG can act not only as an electronic conductive network but also as a Lewis base “catalyst” matrix that promotes the higher Li 2 S n to be further oxidized completely to S 8 as demonstrated in the cyclic voltammetry curve, which can thus significantly improve the sulfur utilization and cyclic stability even at a high sulfur loading of 75% (w/w) in the S@NG composite.

  13. Fabrication of folic acid sensor based on the Cu doped SnO2 nanoparticles modified glassy carbon electrode

    International Nuclear Information System (INIS)

    Lavanya, N; Radhakrishnan, S; Sudhan, N; Sekar, C; Leonardi, S G; Neri, G; Cannilla, C

    2014-01-01

    A novel folic acid biosensor has been fabricated using Cu doped SnO 2 nanoparticles (NPs) synthesized by a simple microwave irradiation method. Powder XRD and TEM studies confirmed that both the pure and Cu doped SnO 2 (Cu: 0, 10, 20wt%) crystallized in tetragonal rutile-type structure with spherical morphology. The average crystallite size of pure SnO 2 was estimated to be around 16 nm. Upon doping, the crystallite sizes decreased to 9 nm and 5 nm for 10 and 20wt% Cu doped SnO 2 respectively. XPS studies confirmed the electronic state of Sn and Cu to be 4+ and 2+ respectively. Cu (20wt%) doped SnO 2 NPs are proved to be a good sensing element for the determination of folic acid (FA). Cu-SnO 2 NPs (20wt%) modified glassy carbon electrode (GCE) exhibited the lowest detection limit of 0.024 nM over a wide folic acid concentration range of 1.0 × 10 −10 to 6.7 × 10 −5 M at physiological pH of 7.0. The fabricated sensor is highly selective towards the determination of FA even in the presence of a 100 fold excess of common interferent ascorbic acid. The sensor proved to be useful for the estimation of FA content in pharmaceutical sample with satisfactory recovery. (paper)

  14. Highly selective manganese-doped zinc sulfide quantum dots based label free phosphorescent sensor for phosphopeptides in presence of zirconium (IV).

    Science.gov (United States)

    Gong, Yan; Fan, Zhefeng

    2015-04-15

    We report a room-temperature phosphorescence (RTP) sensor for phosphopeptides based on zirconium (IV)-modulated mercaptopropionic acid (MPA)-capped Mn-doped ZnS quantum dots (QDs). This sensor incorporates the advantages of the well-known Zr(4+)-phosphopeptide affinity pair and the RTP properties of doped QDs. The RTP of Mn-doped ZnS QDs capped with MPA can be effectively quenched by Zr(4+). The high affinity of phosphopeptides to Zr(4+) enables the dissociation of the ion from the surface of MPA-capped ZnS QDs, thereby forming a stable complex with phosphopeptides in the solution, and recovering the RTP of the QDs. The Zr(4+)-induced RTP quenching and subsequent phosphopeptide-induced RTP recovery for MPA-capped ZnS QDs provide a solid basis for the present RTP sensor based on QDs for the detection of phosphopeptides. The detection limit for phosphopeptides is 0.9ngmL(-1), the relative standard deviations is 2.5%, and the recovery of urine and serum samples with phosphopeptides addition rangs from 96% to 105% at optimal conditions. The proposed method was successfully applied to biological fluids and obtained satisfactory results. Copyright © 2014 Elsevier B.V. All rights reserved.

  15. Gene doping in modern sport.

    OpenAIRE

    MAREK SAWCZUK; AGNIESZKA MACIEJEWSKA; PAWEL CIESZCZYK,

    2009-01-01

    Background: The subject of this paper is gene doping, which should be understood as "he non-therapeutic use of cells, genes, genetic elements, or of the modulation of gene expression, having the capacity to improve athletic performance". The authors of this work, based on the review of literature and previous research, make an attempt at wider characterization of gene doping and the discussion of related potential threats.Methods: This is a comprehensive survey of literature on the latest app...

  16. Enhanced performance of P(VDF-HFP)-based composite polymer electrolytes doped with organic-inorganic hybrid particles PMMA-ZrO2 for lithium ion batteries

    Science.gov (United States)

    Xiao, Wei; Wang, Zhiyan; Zhang, Yan; Fang, Rui; Yuan, Zun; Miao, Chang; Yan, Xuemin; Jiang, Yu

    2018-04-01

    To improve the ionic conductivity as well as enhance the mechanical strength of the gel polymer electrolyte, poly(vinylidene fluoride-hexafluoroprolene) (P(VDF-HFP))-based composite polymer electrolyte (CPE) membranes doped with the organic-inorganic hybrid particles poly(methyl methacrylate) -ZrO2 (PMMA-ZrO2) are prepared by phase inversion method, in which PMMA is successfully grafted onto the surface of the homemade nano-ZrO2 particles via in situ polymerization confirmed by FT-IR. XRD and DSC patterns show adding PMMA-ZrO2 particles into P(VDF-HFP) can significantly decrease the crystallinity of the CPE membrane. The CPE membrane doped with 5 wt % PMMA-ZrO2 particles can not only present a homogeneous surface with abundant interconnected micro-pores, but maintain its initial shape after thermal exposure at 160 °C for 1 h, in which the ionic conductivity and lithium ion transference number at room temperature can reach to 3.59 × 10-3 S cm-1 and 0.41, respectively. The fitting results of the EIS plots indicate the doped PMMA-ZrO2 particles can significantly lower the interface resistance and promote lithium ions diffusion rate. The Li/CPE-sPZ/LiCoO2 and Li/CPE-sPZ/Graphite coin cells can deliver excellent rate and cycling performance. Those results suggest the P(VDF-HFP)-based CPE doped with 5 wt % PMMA-ZrO2 particles can become an exciting potential candidate as polymer electrolyte for the lithium ion battery.

  17. High sensitivity ethanol gas sensor based on Sn - doped ZnO under visible light irradiation at low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Peishuo; Pan, Guofeng; Zhang, Bingqiang; Zhen, Jiali; Sun, Yicai, E-mail: pgf@hebut.edu.cn [Institute of Microelectronic, Hebei University of Technology, Tianjin (China)

    2014-07-15

    Pure ZnO and 5at%, 7at%, 9at% Sn - doped ZnO materials are prepared by the chemical co - precipitation method. They were annealed by furnace at temperature range of 300 - 700ºC in air for 1h. The ZnO materials are characterized by X - ray diffraction (XRD) and scanning electron microscopy (SEM). The results show that the Sn - doped ZnO materials appear rough porous structures. The maximum sensitivity can be achieved by doping the amount of 7 at%. It has much better sensing performance towards ethanol vapor under visible light irradiation. The response and recovery time are ~1s and ~5s, respectively. The mechanism for the improvement in the sensing properties can be explained with the surface adsorption theory and the photoactivation theory. (author)

  18. Highly efficient and concentration-insensitive organic light-emitting devices based on self-quenching-resistant orange–red iridium complex

    Energy Technology Data Exchange (ETDEWEB)

    Qi, Yige; Wang, Xu [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Li, Ming [College of Chemistry, Sichuan University, Chengdu 610064 (China); Lu, Zhiyun, E-mail: luzhiyun@scu.edu.cn [College of Chemistry, Sichuan University, Chengdu 610064 (China); Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

    2014-11-15

    Orange–red phosphorescent organic light-emitting devices (PHOLEDs) with high efficiency and concentration insensitivity based on a novel iridium complex, bis[2-(biphenyl-4-yl)benzothiazole-N,C{sup 2}′]iridium(III) (acetylacetonate) [(4Phbt){sub 2}Ir(acac)], were fabricated. With the heavily doped emissive layer (EML) of 4,4′-N,N′-dicarbazolylbiphenyl (CBP): (4Phbt){sub 2}Ir(acac) in a wide and easily controlled dopant concentration range from 12 wt% to 24 wt%, a maximum power efficiency of 29 lm/W and an external quantum efficiency of >16% of the PHOLEDs were obtained, implying the insensitivity of electroluminescence (EL) properties to doping concentration. Meanwhile, a maximum power efficiency of 5.0 lm/W was achieved from a non-doped device with neat (4Phbt){sub 2}Ir(acac) as the EML, indicating a superior property of self-quenching resistance. The mechanism of direct exciton formation, in which exciton-formation regions are distributed throughout the EML, is responsible for the significant alleviation of triplet–triplet annihilation and superior EL performance. - Highlights: • Highly efficient and concentration-insensitive PHOLEDs were obtained. • The high efficiency of non-doped PHOLEDs indicated a quenching-resistant property. • The independence of EL spectra on doping concentration was observed. • The heavily doped devices were dominated by mechanism of direct exciton formation.

  19. Improvement of the performance of microwave X band absorbers based on pure and doped Ba-hexaferrite

    Energy Technology Data Exchange (ETDEWEB)

    Seyyed Afghahi, Seyyed Salman [Department of Materials Science and Engineering, Imam Hossein University, Tehran (Iran, Islamic Republic of); Jafarian, Mojtaba, E-mail: m.jafarian@srbiau.ac.ir [Young Researchers and Elite Club, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Salehi, Mohsen [Young Researchers and Elite Club, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Atassi, Yomen [Department of Applied Physics, Higher Institute for Applied Sciences and Technology, Damascus (Syrian Arab Republic)

    2017-01-01

    Optimum Fe/Ba mole ratio is determined in doped Ba-hexaferrite prepared via mechanical activation. X-ray diffractometer (XRD), scanning electron microscope (SEM), vibrating sample magnetometer (VSM) and vector network analyzer are used to analyze phases, structures, electromagnetic and microwave absorption properties. The mole ratio of Fe/Ba=10 is detected to be optimum for doping and synthesizing the Ba-hexaferrite. In order to achieve high absorption in X band the ions of Zr{sup 4+}–Sn{sup 4+}–Ti{sup 4+}–M{sup 2+} (M=Mg{sup 2+}, Zn{sup 2+}, Cu{sup 2+}, Co{sup 2+}) are used as dopants. The results indicate the formation of single phase Ba-hexaferrite in either pure or doped compounds without any non-magnetic intermediate phases and with spherical and hexagonal morphologies respectively for the pure and doped ferrite. It is found out that BaCo{sub 2}Zr(SnTi){sub 0.5}Fe{sub 8}O{sub 19} compound has the maximum saturation magnetization (49.80 emu/g). Also the composite of BaCo{sub 2}Zr(SnTi){sub 0.5}Fe{sub 8}O{sub 19} 50 wt% in epoxy resin exhibits a minimum reflection loss of −29 dB at 12.2 GHz with 2.6 GHz bandwidth. - Highlights: • Optimum Fe/Ba mole ratio is determined in doped Ba-hexaferrite. • Formation of a single phase M-hexaferrite, pure or doped when Fe/Ba=10. • Preparation of microwave absorber of BaCo{sub 2}Zr(SnTi){sub 0.5}Fe{sub 8}O{sub 19}/epoxy resin, 50 wt%. • The absorber exhibits a minimum RL of −29 dB at 12.2 GHz with 2.6 GHz bandwidth.

  20. Device characteristics of organic light-emitting diodes based on electronic structure of the Ba-doped Alq3 layer.

    Science.gov (United States)

    Lim, Jong Tae; Kim, Kyung Nam; Yeom, Geun Young

    2009-12-01

    Organic light-emitting diodes (OLEDs) with a Ba-doped tris(8-quinolinolato)aluminum(III) (Alq3) layer were fabricated to reduce the barrier height for electron injection and to improve the electron conductivity. In the OLED consisting of glass/ITO/4,4',4"-tris[2-naphthylphenyl-1-phenylamino]triphenylamine (2-TNATA, 30 nm)/4,4'-bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl (NPB, 18 nm)/Alq3 (42 nm)/Ba-doped Alq3 (20 nm, x%: x = 0, 10, 25, and 50)/Al (100 nm), the device with the Alq3 layer doped with 10% Ba showed the highest light out-coupling characteristic. However, as the Ba dopant concentration was increased from 25% to 50%, this device characteristic was largely reduced. The characteristics of these devices were interpreted on the basis of the chemical reaction between Ba and Alq3 and the electron injection property by analyzing the electronic structure of the Ba-doped Alq3 layer. At a low Ba doping of 10%, mainly the Alq3 radical anion species was formed. In addition, the barrier height for electron injection in this layer was decreased to 0.6 eV, when compared to the pristine Alq3 layer. At a high Ba doping of 50%, the Alq3 molecules were severely decomposed. When the Ba dopant concentration was changed, the light-emitting characteristics of the devices were well coincided with the formation mechanism of Alq3 radical anion and Alq3 decomposition species.

  1. Ce3+-Doping to Modulate Photoluminescence Kinetics for Efficient CsPbBr3 Nanocrystals Based Light-Emitting Diodes.

    Science.gov (United States)

    Yao, Ji-Song; Ge, Jing; Han, Bo-Ning; Wang, Kun-Hua; Yao, Hong-Bin; Yu, Hao-Lei; Li, Jian-Hai; Zhu, Bai-Sheng; Song, Ji-Zhong; Chen, Chen; Zhang, Qun; Zeng, Hai-Bo; Luo, Yi; Yu, Shu-Hong

    2018-03-14

    Inorganic perovskite CsPbBr 3 nanocrystals (NCs) are emerging, highly attractive light emitters with high color purity and good thermal stability for light-emitting diodes (LEDs). Their high photo/electroluminescence efficiencies are very important for fabricating efficient LEDs. Here, we propose a novel strategy to enhance the photo/electroluminescence efficiency of CsPbBr 3 NCs through doping of heterovalent Ce 3+ ions via a facile hot-injection method. The Ce 3+ cation was chosen as the dopant for CsPbBr 3 NCs by virtue of its similar ion radius and formation of higher energy level of conduction band with bromine in comparison with the Pb 2+ cation to maintain the integrity of perovskite structure without introducing additional trap states. It was found that by increasing the doping amount of Ce 3+ in CsPbBr 3 NCs to 2.88% (atomic percentage of Ce compared to Pb) the photoluminescence quantum yield (PLQY) of CsPbBr 3 NCs reached up to 89%, a factor of 2 increase in comparison with the native, undoped ones. The ultrafast transient absorption and time-resolved photoluminescence (PL) spectroscopy revealed that Ce 3+ -doping can significantly modulate the PL kinetics to enhance the PL efficiency of doped CsPbBr 3 NCs. As a result, the LED device fabricated by adopting Ce 3+ -doped CsPbBr 3 NCs as the emitting layers exhibited a pronounced improvement of electroluminescence with external quantum efficiency (EQE) from 1.6 to 4.4% via Ce 3+ -doping.

  2. ZnO-Based Transparent Conductive Thin Films: Doping, Performance, and Processing

    International Nuclear Information System (INIS)

    Liu, Y.; Li, Y.; Zeng, H.

    2013-01-01

    ZnO-based transparent conductive thin films have attracted much attention as a promising substitute material to the currently used indium-tin-oxide thin films in transparent electrode applications. However, the detailed function of the dopants, acting on the electrical and optical properties of ZnO-based transparent conductive thin films, is not clear yet, which has limited the development and practical applications of ZnO transparent conductive thin films. Growth conditions such as substrate type, growth temperature, and ambient atmosphere all play important roles in structural, electrical, and optical properties of films. This paper takes a panoramic view on properties of ZnO thin films and reviews the very recent works on new, efficient, low-temperature, and high-speed deposition technologies. In addition, we highlighted the methods of producing ZnO-based transparent conductive film on flexible substrate, one of the most promising and rapidly emerging research areas. As optimum-processing-parameter conditions are being obtained and their influencing mechanism is becoming clear, we can see that there will be a promising future for ZnO-based transparent conductive films.

  3. Enhanced photovoltaic performance of dye-sensitized solar cells based on nickel oxide supported on nitrogen-doped graphene nanocomposite as a photoanode.

    Science.gov (United States)

    Ranganathan, Palraj; Sasikumar, Ragu; Chen, Shen-Ming; Rwei, Syang-Peng; Sireesha, Pedaballi

    2017-10-15

    We applied the nitrogen-doped graphene@nickel oxide (NGE/NiO) nanocomposite doped TiO 2 as a photo-anode for dye-sensitized solar cells (DSSCs) on fluorine-doped tin oxide (FTO) substrates by screen printing method. Power conversion efficiency (PCE) of 9.75% was achieved for this DSSCs device, which is greater than that of DSSCs devices using GO/TiO 2 , and NiO/TiO 2 based photo-anodes (PCE=8.55, and 9.11%). Also, the fill factor (FF) of the DSSCs devices using the NGE/NiO/TiO 2 nanocomposite photo-anode was better than that of other photo-anodes. The NGE/NiO/TiO 2 short-circuit photocurrent density (J sc ) of 19.04mAcm -2 , open circuit voltage (V oc ) of 0.76V, fill factor (FF) of 0.67 and dye absorption rate 0.21×10 -6 molcm -2 . The obtained results suggest that as-prepared NGE/NiO/TiO 2 nanocomposite is suitable photo-anode for DSSCs application. Copyright © 2017 Elsevier Inc. All rights reserved.

  4. Chitosan-doped-hybrid/TiO2 nanocomposite based sol-gel coating for the corrosion resistance of aluminum metal in 3.5% NaCl medium.

    Science.gov (United States)

    J, Balaji; M G, Sethuraman

    2017-11-01

    The study outlines the role of chitosan, a biopolymer on corrosion behavior of Hy/nano-TiO 2 based sol-gel coating over aluminum metal. In this study organic-inorganic hybrid sols were synthesized through hydrolysis and condensation of 3-glycidoxypropyltrimethoxy silane (GPTMS), tetraethoxysilane (TEOS) and titanium (IV) isopropoxide (TIP) in acidic solution. Chitosan was doped into sol-gel matrix and self-assembled over aluminum substrate. The resultant chitosan-doped-Hy/nano-TiO 2 sol-gel coating was characterized by Fourier Transform Infrared (FT-IR) spectra, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM) and Energy-Dispersive X-ray Spectroscopy (EDX) analyses. The as-tailored aluminum substrate was evaluated for corrosion resistance in neutral medium. The protection ability of these coatings was evaluated by electrochemical impedance studies (EIS) and potentiodynamic polarization (PP) measurements in 3.5% NaCl medium. The EIS and PP results showed that chitosan-doped- Hy/nano-TiO 2 sol-gel coating exhibited better protection from corrosion than the undoped Hy/TiO 2 nanocomposite coating. Copyright © 2017 Elsevier B.V. All rights reserved.

  5. Experimental study on the 4H-SiC-based VDMOSFETs with lightly doped P-well field-limiting rings termination

    Science.gov (United States)

    He, Yan Jing; Lv, Hong Liang; Tang, Xiao Yan; Song, Qing Wen; Zhang, Yi Meng; Han, Chao; Zhang, Yi Men; Zhang, Yu Ming

    2017-03-01

    A lightly doped P-well field-limiting rings (FLRs) termination on 4H-SiC vertical double-implanted metal-oxide-semiconductor field-effect transistors (VDMOSFETs) has been investigated. Based on the simulation, the proposed termination applied to 4H-SiC VDMOSFET could achieve an almost same breakdown voltage (BV) and have the advantage of lower ion-implantation damage comparing with P+ FLRs termination. Meanwhile, this kind of termination also reduces the difficulty and consumption of fabrication process. 4H-SiC VDMOSFETs with lightly doped P-well (FLRs) termination have been fabricated on 10 μm thick epi-layer with nitrogen doping concentration of 6.2 × 1015 cm-3. The maximum breakdown voltage of the 4H-SiC VDMOSFETs has achieved as high as 1610 V at a current of 15 μA, which is very close to the simulated result of 1643 V and about 90% of the plane parallel breakdown voltage of 1780 V. It is considered that P-well FLRs termination is an effective, robust and process-tolerant termination structure suitable for 4H-SiC VDMOSFET.

  6. A DFT-Based Model on the Adsorption Behavior of H2O, H+, Cl−, and OH− on Clean and Cr-Doped Fe(110 Planes

    Directory of Open Access Journals (Sweden)

    Jun Hu

    2018-01-01

    Full Text Available The impact of four typical adsorbates, namely H2O, H+, Cl−, and OH−, on three different planes, namely, Fe(110, Cr(110 and Cr-doped Fe(110, was investigated by using a density functional theory (DFT-based model. It is verified by the adsorption mechanism of the abovementioned four adsorbates that the Cr-doped Fe(110 plane is the most stable facet out of the three. As confirmed by the adsorption energy and electronic structure, Cr doping will greatly enhance the electron donor ability of neighboring Fe atoms, which in turn prompts the adsorption of the positively charged H+. Meanwhile, the affinity of Cr to negatively charged adsorbates (e.g., Cl− and O of H2O, OH− is improved due to the weakening of its electron donor ability. On the other hand, the strong bond between surface atoms and the adsorbates can also weaken the bond between metal atoms, which results in a structure deformation and charge redistribution among the native crystal structure. In this way, the crystal becomes more vulnerable to corrosion.

  7. Interpretation of Mechanical and Thermal Properties of Heavy Duty Epoxy Based Floor Coating Doped by Nanosilica

    Science.gov (United States)

    Nikje, M. M. Alavi; Khanmohammadi, M.; Garmarudi, A. Bagheri

    Epoxy-nano silica composites were prepared using Bisphenol-A epoxy resin (Araldite® GY 6010) resin obtained from in situ polymerization or blending method. SiO2 nanoparticles were pretreated by a silan based coupling agent. Surface treated nano silica was dispersed excellently by mechanical and ultrasonic homogenizers. A dramatic increase in the interfacial area between fillers and polymer can significantly improve the properties of the epoxy coating product such as tensile, elongation, abrasion resistance, etc.

  8. Low temperature synthesis and electrical characterization of germanium doped Ti-based nanocrystals for nonvolatile memory

    International Nuclear Information System (INIS)

    Feng, Li-Wei; Chang, Chun-Yen; Chang, Ting-Chang; Tu, Chun-Hao; Wang, Pai-Syuan; Lin, Chao-Cheng; Chen, Min-Chen; Huang, Hui-Chun; Gan, Der-Shin; Ho, New-Jin; Chen, Shih-Ching; Chen, Shih-Cheng

    2011-01-01

    Chemical and electrical characteristics of Ti-based nanocrystals containing germanium, fabricated by annealing the co-sputtered thin film with titanium silicide and germanium targets, were demonstrated for low temperature applications of nonvolatile memory. Formation and composition characteristics of nanocrystals (NCs) at various annealing temperatures were examined by transmission electron microscopy and X-ray photon-emission spectroscopy, respectively. It was observed that the addition of germanium (Ge) significantly reduces the proposed thermal budget necessary for Ti-based NC formation due to the rise of morphological instability and agglomeration properties during annealing. NC structures formed after annealing at 500 °C, and separated well at 600 °C annealing. However, it was also observed that significant thermal desorption of Ge atoms occurs at 600 °C due to the sublimation of formatted GeO phase and results in a serious decrease of memory window. Therefore, an approach to effectively restrain Ge thermal desorption is proposed by encapsulating the Ti-based trapping layer with a thick silicon oxide layer before 600 °C annealing. The electrical characteristics of data retention in the sample with the 600 °C annealing exhibited better performance than the 500 °C-annealed sample, a result associated with the better separation and better crystallization of the NC structures.

  9. Non-Doped Sky-Blue OLEDs Based on Simple Structured AIE Emitters with High Efficiencies at Low Driven Voltages.

    Science.gov (United States)

    Islam, Amjad; Zhang, Dongdong; Peng, Ruixiang; Yang, Rongjuan; Hong, Ling; Song, Wei; Wei, Qiang; Duan, Lian; Ge, Ziyi

    2017-09-05

    Blue organic light-emitting diodes (OLEDs) are necessary for flat-panel display technologies and lighting applications. To make more energy-saving, low-cost and long-lasting OLEDs, efficient materials as well as simple structured devices are in high demand. However, a very limited number of blue OLEDs achieving high stability and color purity have been reported. Herein, three new sky-blue emitters, 1,4,5-triphenyl-2-(4-(1,2,2-triphenylvinyl)phenyl)-1H-imidazole (TPEI), 1-(4-methoxyphenyl)-4,5-diphenyl-2-(4-(1,2,2-triphenylvinyl)phenyl)-1H-imidazole (TPEMeOPhI) and 1-phenyl-2,4,5-tris(4-(1,2,2-triphenylvinyl)phenyl)-1H-imidazole (3TPEI), with a combination of imidazole and tetraphenylethene groups, have been developed. High photoluminescence quantum yields are obtained for these materials. All derivatives have demonstrated aggregation-induced emission (AIE) behavior, excellent thermal stability with high decomposition and glass transition temperatures. Non-doped sky-blue OLEDs with simple structure have been fabricated employing these materials as emitters and realized high efficiencies of 2.41 % (4.92 cd A -1 , 2.70 lm W -1 ), 2.16 (4.33 cd A -1 , 2.59 lm W -1 ) and 3.13 % (6.97 cd A -1 , 4.74 lm W -1 ) for TPEI, TPEMeOPhI and 3TPEI, with small efficiency roll-off. These are among excellent results for molecules constructed from the combination of imidazole and TPE reported so far. The high performance of a 3TPEI-based device shows the promising potential of the combination of imidazole and AIEgen for synthesizing efficient electroluminescent materials for OLED devices. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. A silver ion-doped calcium phosphate-based ceramic nanopowder-coated prosthesis increased infection resistance.

    Science.gov (United States)

    Kose, Nusret; Otuzbir, Ali; Pekşen, Ceren; Kiremitçi, Abdurrahman; Doğan, Aydin

    2013-08-01

    Despite progress in surgical techniques, 1% to 2% of joint arthroplasties become complicated by infection. Coating implant surfaces with antimicrobial agents have been attempted to prevent initial bacterial adhesion to implants with varying success rates. We developed a silver ion-containing calcium phosphate-based ceramic nanopowder coating to provide antibacterial activity for orthopaedic implants. We asked whether titanium prostheses coated with this nanopowder would show resistance to bacterial colonization as compared with uncoated prostheses. We inserted titanium implants (uncoated [n = 9], hydroxyapatite-coated [n = 9], silver-coated [n = 9]) simulating knee prostheses into 27 rabbits' knees. Before implantation, 5 × 10(2) colony-forming units of Staphylococcus aureus were inoculated into the femoral canal. Radiology, microbiology, and histology findings were quantified at Week 6 to define the infection, microbiologically by increased rate of implant colonization/positive cultures, histologically by leukocyte infiltration, necrosis, foreign-body granuloma, and devitalized bone, and radiographically by periosteal reaction, osteolysis, or sequestrum formation. Swab samples taken from medullary canals and implants revealed a lower proportion of positive culture in silver-coated implants (one of nine) than in uncoated (eight of nine) or hydroxyapatite-coated (five of nine) implants. Silver-coated implants also had a lower rate of colonization. No cellular inflammation or foreign-body granuloma was observed around the silver-coated prostheses. Silver ion-doped ceramic nanopowder coating of titanium implants led to an increase in resistance to bacterial colonization compared to uncoated implants. Silver-coated orthopaedic implants may be useful for resistance to local infection but will require in vivo confirmation.

  11. Highly selective detection of p-nitrophenol using fluorescence assay based on boron, nitrogen co-doped carbon dots.

    Science.gov (United States)

    Xiao, Na; Liu, Shi Gang; Mo, Shi; Li, Na; Ju, Yan Jun; Ling, Yu; Li, Nian Bing; Luo, Hong Qun

    2018-07-01

    p-Nitrophenol (p-NP) contaminants seriously endanger environmental and living beings health, hence to establish a sensitive and selective method is of great importance for the determination of p-NP. In this work, boron and nitrogen co-doped carbon dots (B,N-CDs) were synthesized by one-step hydrothermal method using 3-aminophenylboronic acid as the sole precursor. The product was characterized through high-resolution transmission electron microscopy, fluorescence spectroscopy, UV-visible absorption spectroscopy, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy. Without any functionalized modification, B,N-CDs can be directly applied as a 'turn-off' fluorescent probe for rapid, highly selective, and sensitive detection of p-NP. The fluorescent sensor based on the B,N-CDs exhibited a broad linear response to the concentration of p-NP in the range of 0.5 - 60 μM and 60 - 200 μM, respectively, and provided a detection limit of 0.2 μM. It was found that only the absorption spectrum of p-NP has a wide overlap with the fluorescence excitation and emission spectra of B,N-CDs compared to those of other representative analogues. The response mechanism was due to the inner filter effect and the formation of dynamic covalent B-O bonds between B,N-CDs and p-NP, which endowed the sensing platform with the rapid response and high selectivity to p-NP. Finally, the sensor showed the practicability of p-NP determination in environmental water samples. Copyright © 2018 Elsevier B.V. All rights reserved.

  12. Enhanced photovoltaic performance of ZnO nanorod-based dye-sensitized solar cells by using Ga doped ZnO seed layer

    Energy Technology Data Exchange (ETDEWEB)

    Dou, Yuanyao [State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing 400044 (China); Department of Applied Physics, College of Physics, Chongqing University, Chongqing 401331 (China); Wu, Fang, E-mail: fang01234@163.com [State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing 400044 (China); Department of Applied Physics, College of Physics, Chongqing University, Chongqing 401331 (China); Mao, Caiying [Department of Applied Physics, College of Physics, Chongqing University, Chongqing 401331 (China); Fang, Liang, E-mail: lfang@cqu.edu.cn [State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing 400044 (China); Department of Applied Physics, College of Physics, Chongqing University, Chongqing 401331 (China); Guo, Shengchun [Department of Applied Physics, College of Physics, Chongqing University, Chongqing 401331 (China); Zhou, Miao [State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing 400044 (China)

    2015-06-05

    Highlights: • ZnO nanorods were grown on Ga-doped ZnO seed layers using hydrothermal method. • Using the ZnO nanorods as photoanodes for fabricated dye-sensitized solar cells. • The highest η of 1.23% can be achieved in a DSSC with 3 at.% Ga-doped in seeds. • The effects of ZnO seed layers on electron transport properties were investigated. • The enhancement performance of DSSCs contributed to higher dye loading and η{sub cc}. - Abstract: Zinc oxide (ZnO) nanorod arrays were grown on FTO substrates with a Ga-doped ZnO (GZO) seed layer by a hydrothermal method. GZO seed layers were obtained via sol–gel technology with Ga concentration in the range of 0–4 at.%. The dye sensitized solar cells (DSSCs) using ZnO nanorod arrays as the photoanode layers were prepared. The effect of Ga dopant concentrations in ZnO seed layer on the morphology features of ZnO nanorod arrays and the performance of DSSCs were systematically investigated. Results indicate that the average diameter and density of ZnO nanorod arrays decrease with increasing Ga concentration, but their length shows an opposite trend. The photocurrent density–voltage (J–V) characteristics reveal that the DSSCs with GZO seed layer exhibit significantly improved photovoltaic performance. In particular, the highest energy conversion efficiency (η) of 1.23% can be achieved in a DSSC with 3 at.% Ga doping, which is increased by 86.36% compared with that of the undoped DSSC. The external quantum efficiency (EQE) spectra and electrochemical impedance spectroscopy (EIS) were employed to explore the photon-to-electron conversion process in DSSCs. It is demonstrated that the performance enhancement of DSSCs based on GZO seed layer can be attributed to higher amount of dye loading, more efficient electron transportation and better electrons collection efficiency.

  13. Effect of boron-doping on the luminescent and electrical properties of a CdS/Si heterostructure based on Si nanoporous pillar array

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Ling Ling [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); College of Physics and Chemistry, Henan Polytechnic University, Jiaozuo 454000 (China); Wang, Xiao Bo [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); College of Physics and Electrical Engineering, Anyang Normal University, Anyang 455000 (China); Cai, Xiao Jun [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); Li, Xin Jian, E-mail: lixj@zzu.edu.cn [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China)

    2015-05-25

    Highlights: • B-doped CdS/Si-NPA heterostructure was prepared by a CBD method. • B-doping does not affect the crystal structure and surface morphology of CdS/Si-NPA. • The optical/electrical properties of CdS/Si-NPA could be tuned by changing [B]/[Cd] ratio. • CdS/Si-NPA with optimal physical properties could be prepared with [B]/[Cd] = 0.01. • The method may find applications in preparing CdS/Si-NPA devices with high device performances. - Abstract: Using silicon nanoporous pillar array (Si-NPA) as substrates and boric acid as dopant source, a series of CdS/Si nanoheterostructures were prepared by growing B-doped CdS thin films on Si-NPA via a chemical bath deposition (CBD) method. The structural, optical and electrical properties of CdS/Si-NPA were studied as a function of the [B]/[Cd] ratio of the initial CBD solutions. Our results disclosed that B concentration could be tuned effectively through changing the ratio of [B]/[Cd], which would bring large variation on the optical and electrical properties of CdS/Si-NPA without affecting its crystal structure and surface morphology. The samples with optimal optical and electrical properties were prepared with [B]/[Cd] = 0.01, in which the physical properties of relatively strong light absorption, small electrical resistivity, low turn-on voltage, small leakage current density and high breakdown voltage could be obtained. These results indicated that B-doping might be an effective path for promoting the performance of the optoelectronic devices based on CdS/Si-NPA.

  14. Efficient light emitting devices based on phosphorescent partially doped emissive layers

    KAUST Repository

    Yang, Xiaohui

    2013-05-29

    We report efficient organic light emitting devices employing an ultrathin phosphor emissive layer. The electroluminescent spectra of these devices can be tuned by introducing a low-energy emitting phosphor layer into the emission zone. Devices with the emissive layer consisting of multiple platinum-complex/spacer layer cells show a peak external quantum efficiency of 18.1%, which is among the best EQE values for platinum-complex based light emitting devices. Devices with an ultrathin phosphor emissive layer show stronger luminance decay with the operating time compared to the counterpart devices having a host-guest emissive layer.

  15. Durability Issues of High Temperature Proton Exchange Membrane Fuel Cells Based on Acid Doped Polybenzimidazole Membranes

    DEFF Research Database (Denmark)

    . As a critical concern, issues of long term durability of PBI based fuel cells are addressed in this talk, including oxidative degradation of the polymer, mechanical failures of the membrane, acid leaching out, corrosion of carbon support and sintering of catalysts particles. Excellent polymer durability has...... or ionically cross-linking and structure modification With load, thermal or startup-shutdown cycling, the performance loss was found to be much bigger, about 300 µV per cycle or 40 µV per operating hour, due to the increased acid loss and catalyst support corrosion, particularly under open circuit voltage...... operation. Further efforts are outlined to the future work....

  16. Integrated oxygen sensors based on Mg-doped SrTiO3 fabricated by screen-printing

    DEFF Research Database (Denmark)

    Zheng, H.; Toft Sørensen, O.

    1998-01-01

    This paper describes the fabrication and testing of Mg-doped SrTiO3 thick-film oxygen sensors with an integrated Pt heater. The results show that the sensor exhibits a PO2 dependence according to R proportional to PO2-1/4 in the considered PO2 range(2.5 x 10(-5) bar

  17. A Fast Humidity Sensor Based on Li+-Doped SnO2 One-Dimensional Porous Nanofibers

    Directory of Open Access Journals (Sweden)

    Min Yin

    2017-05-01

    Full Text Available One-dimensional SnO2- and Li+-doped SnO2 porous nanofibers were easily fabricated via electrospinning and a subsequent calcination procedure for ultrafast humidity sensing. Different Li dopant concentrations were introduced to investigate the dopant’s role in sensing performance. The response properties were studied under different relative humidity levels by both statistic and dynamic tests. The best response was obtained with respect to the optimal doping of Li+ into SnO2 porous nanofibers with a maximum 15 times higher response than that of pristine SnO2 porous nanofibers, at a relative humidity level of 85%. Most importantly, the ultrafast response and recovery time within 1 s was also obtained with the 1.0 wt % doping of Li+ into SnO2 porous nanofibers at 5 V and at room temperature, benefiting from the co-contributions of Li-doping and the one-dimensional porous structure. This work provides an effective method of developing ultrafast sensors for practical applications—especially fast breathing sensors.

  18. Transmission electron microscopy of GaN based, doped semiconductor heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Pretorius, A.

    2006-07-01

    This thesis addresses the analysis of GaN based heterostructures with transmission electron microscopy (TEM). Basic properties of the material of interest are introduced in chapter 2. These include the structural and optical properties as well as an introduction to the growth methods used for the samples analysed in this work. In chapter 3 a brief theoretical treatment of TEM is given. As one main topic of this work is the determination of the In concentration in InGaN islands using strain state analysis, a detailed description of the method is given. Chapter 4 describes the results obtained for pyramidal defects present in metalorganic vapour phase epitaxy grown GaN:Mg with high dopant concentration. Based on the experimental results and the well established knowledge that GaN of inverted polarity is present inside the pyramidal defects, a variety of basal plane inversion domain boundary models was set up. From these models, HRTEM images were simulated using the multislice approach, followed by a quantitative comparison to experimentally obtained HRTEM images. Another focus of this work is the analysis of In{sub x}Ga{sub 1-x}N islands grown on GaN presented in chapter 5. Following a literature survey which describes different methods used to obtain In{sub x}Ga{sub 1-x}N islands, the first topic is the distinction of In{sub x}Ga{sub 1-x}N islands and metal droplets, which can form during growth. This is followed by the experimental results of molecular beam epitaxy and metalorganic vapour phase epitaxy grown In{sub x}Ga{sub 1-x}N island and quantum dot samples. (orig.)

  19. Characterization of aqueous interactions of copper-doped phosphate-based glasses by vapour sorption.

    Science.gov (United States)

    Stähli, Christoph; Shah Mohammadi, Maziar; Waters, Kristian E; Nazhat, Showan N

    2014-07-01

    Owing to their adjustable dissolution properties, phosphate-based glasses (PGs) are promising materials for the controlled release of bioinorganics, such as copper ions. This study describes a vapour sorption method that allowed for the investigation of the kinetics and mechanisms of aqueous interactions of PGs of the formulation 50P2O5-30CaO-(20-x)Na2O-xCuO (x=0, 1, 5 and 10mol.%). Initial characterization was performed using (31)P magic angle spinning nuclear magnetic resonance and attenuated total reflectance-Fourier transform infrared spectroscopy. Increasing CuO content resulted in chemical shifts of the predominant Q(2) NMR peak and of the (POP)as and (PO(-)) Fourier transform infrared absorptions, owing to the higher strength of the POCu bond compared to PONa. Vapour sorption and desorption were gravimetrically measured in PG powders exposed to variable relative humidity (RH). Sorption was negligible below 70% RH and increased exponentially with RH from 70 to 90%, where it exhibited a negative correlation with CuO content. Vapour sorption in 0% and 1% CuO glasses resulted in phosphate chain hydration and hydrolysis, as evidenced by protonated Q(0)(1H) and Q(1)(1H) species. Dissolution rates in deionized water showed a linear correlation (R(2)>0.99) with vapour sorption. Furthermore, cation release rates could be predicted based on dissolution rates and PG composition. The release of orthophosphate and short polyphosphate species corroborates the action of hydrolysis and was correlated with pH changes. In conclusion, the agreement between vapour sorption and routine characterization techniques in water demonstrates the potential of this method for the study of PG aqueous reactions. Copyright © 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

  20. Superconductivity in doped two-leg ladder cuprates

    International Nuclear Information System (INIS)

    Qin Jihong; Yuan Feng; Feng Shiping

    2006-01-01

    Within the t-J ladder model, superconductivity with a modified d-wave symmetry in doped two-leg ladder cuprates is investigated based on the kinetic energy driven superconducting mechanism. It is shown that the spin-liquid ground-state at the half-filling evolves into the superconducting ground-state upon doping. In analogy to the doping dependence of the superconducting transition temperature in the planar cuprate superconductors, the superconducting transition temperature in doped two-leg ladder cuprates increases with increasing doping in the underdoped regime, and reaches a maximum in the optimal doping, then decreases in the overdoped regime

  1. In-situ epitaxial growth of heavily phosphorus doped SiGe by low pressure chemical vapor deposition

    CERN Document Server

    Lee, C J

    1998-01-01

    We have studied epitaxial crystal growth of Si sub 1 sub - sub x Ge sub x films on silicon substrates at 550 .deg. C by low pressure chemical vapor deposition. In a low PH sub 3 partial pressure region such as below 1.25x10 sup - sup 3 Pa, both the phosphorus and carrier concentrations increased with increasing PH sub 3 partial pressure, but the deposition rate and the Ge fraction remained constant. In a higher PH sub 3 partial pressure region, the deposition rate, the phosphorus concentration, and the carrier concentration decreased, while the Ge fraction increased. These suggest that high surface coverage of phosphorus suppresses both SiH sub 4 and GeH sub 4 adsorption/reactions on the surfaces, and its suppression effect on SiH sub 4 is actually much stronger than on GeH sub 4. In particular, epitaxial crystal growth is largely controlled by surface coverage effect of phosphorus in a higher PH sub 3 partial pressure region.

  2. Synthesis, structure and properties of heavily Mn-doped perovskite-type SrTiO.sub.3./sub. nanoparticles

    Czech Academy of Sciences Publication Activity Database

    Trepakov, Vladimír; Makarova, Marina; Stupakov, Oleksandr; Tereshina, Evgeniya; Drahokoupil, Jan; Čerňanský, Marian; Potůček, Zdeněk; Borodavka, Fedir; Valvoda, V.; Lynnyková, Anna; Jäger, Aleš; Jastrabík, Lubomír; Dejneka, Alexandr

    2014-01-01

    Roč. 143, č. 2 (2014), s. 570-577 ISSN 0254-0584 R&D Projects: GA TA ČR TA01010517; GA ČR GAP108/12/1941; GA ČR GBP108/12/G043; GA MŠk(CZ) LM2011026 Institutional support: RVO:68378271 Keywords : nanostructures * oxides * ferroelectricity * magnetic properties Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.259, year: 2014 http://www.sciencedirect.com/science/article/pii/S0254058413007141

  3. The infrared optical properties of heavily B-doped nanocrystalline diamond films on low alkaline glass substrates

    Czech Academy of Sciences Publication Activity Database

    Remeš, Zdeněk; Nesladek, M.

    2006-01-01

    Roč. 203, č. 12 (2006), s. 3016-3020 ISSN 0031-8965 R&D Projects: GA AV ČR KJB100100623 Institutional research plan: CEZ:AV0Z10100521 Keywords : diamond * boron * dielectric function * glass Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.221, year: 2006

  4. Synthesis and characterization of phosphors based on calcium and magnesium silicates doped with europium and dysprosium

    International Nuclear Information System (INIS)

    Misso, Agatha Matos

    2016-01-01

    Ca and Mg silicates based phosphors were prepared by sol-gel method combined with the molten salts process. The gel of silica was obtained from Na 2 SiO 3 solution by using europium, dysprosium, calcium and magnesium chloride solutions. Therefore, those chlorides were homogeneously dispersed into the gel. The obtained gel was dried and heat treated to 900° C for 1h to allow the fusion of the present salts. Then it was water washed until negative test for Cl - , and dried. The reduction of the europium to Eu 2+ was performed under atmosphere of 5% of H 2 and 95% of Ar to 900° C for 3h, to reach CaMgSi 2 O 6 :Eu 2+ and CaMgSi 2 O 6 :Eu 2+ :Dy 3+ phosphors. Diopside was identified as main crystalline phase and quartz, as secondary phase from XRD (X-ray diffraction) patterns. SEM (scanning electron microscopy) micrographs, of the samples showed needles, spheres, leaves and rods of particles and agglomerates. Thermal analysis (TGA-DTGA) curves revealed that the crystallization temperature of CaMgSi 2 O 6 :Eu 2+ lies around 765° C. Photoluminescence spectroscopy of the phosphors was studied based on interconfigurational 4f N → 4f N-1 5d transition of Eu 2+ ion. The spectra of excitation showed 4f N → 4f N-1 5d transition of Eu 2+ ion broad band, related to the ligand to metal charge transfer transition (LMCT) O 2- (2p) → Eu 3+ in the 250 nm region, when the emission is monitored at 583,5 nm. It also presents the 4f ↔ 4f transitions of Eu 3+ ion bands, showing the 7 F 0 → 5 L 6 transition at 393 nm. From emission spectra with excitation monitored at 393 nm, it can be observed fine peaks between 570 and 750 nm which are characteristics of 5 D 0 → 7 F J (J = 0 - 5) transition of Eu 3+ ion, indicating that the Eu 3+ ion occupies a site with center of inversion. Finally, the obtained results indicate that the developed method is suitable to synthesize CaMgSi 2 O 6 :Eu 2+ and CaMgSi 2 O 6 :Eu 2+ :Dy 3+ phosphors, as it has been proposed. (author)

  5. Soda-based glass fabricated from Thailand quartz sands doped with silver compound

    Science.gov (United States)

    Won-in, Krit; Dararutana, Pisutti

    2012-10-01

    Yellow colored glass which used for luxury art glass in ancient time was fabricated by the addition of silver compound into the molten glass. It was proved that it was actually silver nanoparticle technology. In this work, the SiO2-(Na2O,K2O)-CaO-B2O3-Al2O3-MgO glass system was prepared in the laboratory scale based on local quartz sands from Trat Province, eastern area of Thailand as the silica raw material. Various concentrations of silver nitrate were added. After the complete conventional melting process, the bubble-free yellow glasses were yielded. Physical and optical properties such as density, refractive index and optical absorption spectra were measured. Scanning electron microscope coupled with energy dispersive spectroscopy was carried out to study their morphology. The refractive indices and densities were increased as the increase of the silver contents. Electron micrographs showed the presence of silver nanoparticle in the glass matrix. UV-VIS spectra were in good agreement with that found from SEM measurements and corresponded with the universally accepted. It was also showed that the more brilliance on the surface of the glass products was obtained after firing with a gas torch.

  6. Proton irradiation induced defects in Cd and Zn doped InP

    International Nuclear Information System (INIS)

    Rybicki, G.C.; Williams, W.S.

    1993-01-01

    Proton irradiation induced defects in Zn and Cd doped InP have been studied by deep level transient spectroscopy, (DLTS). After 2 MeV proton irradiation the defects H4 and H5 were observed in lightly Zn doped InP, while the defects H3 and H5 were observed in more heavily Zn and Cd doped InP. The defect properties were not affected by the substitution of Cd for Zn, but the introduction rate of H5 was lower in Cd doped InP. The annealing rate of defects was also higher in Cd doped InP. The use of Cd doped InP may thus result in an InP solar cell with even greater radiation resistance

  7. Ultramicroporous carbon with extremely narrow pore distribution and very high nitrogen doping for efficient methane mixture gases upgrading

    KAUST Repository

    Yao, Kexin

    2017-06-24

    It is notably challenging to fabricate heavily heteroatom-doped porous carbonaceous materials with narrow ultramicropore size distributions for highly effective mixed-gas separation. In this study, new carbon-based materials with narrow ultramicropore size (<7 Å) distributions (>95%) and high N doping contents (>10 at%) are fabricated through the pyrolysis of a perchloro-substituted porous covalent triazine-based framework (ClCTF). In particular, the sample prepared at 650 °C (ClCTF-1-650) possesses the highest ultramicropores content (98%) and large N content (12 at%) and demonstrates a very high CH and CO capacity, as well as a low N uptake under ambient conditions. The extraordinarily high CH/N and CO/N selectivities correlate with both the ideal adsorption solution theory (IAST) method and performed dynamic separation experiments (breakthrough experiments). The results reported in this study far exceed the CH/N and CO/N selectivities of previously reported carbon-based adsorbents including various nitrogen-doped ones. These results are believed to be associated with the unusually high N content, as well as the suitably narrow ultramicropore size distribution. This report introduces a new pathway to design porous absorbents with precisely controlled ultramicropores for gas separation.

  8. Ho3+-doped AlF3-TeO2-based glass fibers for 2.1 µm laser applications

    Science.gov (United States)

    Wang, S. B.; Jia, Z. X.; Yao, C. F.; Ohishi, Y.; Qin, G. S.; Qin, W. P.

    2017-05-01

    Ho3+-doped AlF3-TeO2-based glass fibers based on AlF3-BaF2-CaF2-YF3-SrF2-MgF2-TeO2 glasses are fabricated by using a rod-in-tube method. The glass rod including a core and a thick cladding layer is prepared by using a suction method, where the thick cladding layer is used to protect the core from the effect of surface crystallization during the fiber drawing. By inserting the glass rod into a glass tube, the glass fibers with relatively low loss (~2.3 dB m-1 @ 1560 nm) are prepared. By using a 38 cm long Ho3+-doped AlF3-TeO2-based glass fiber as the gain medium and a 1965 nm fiber laser as the pump source, 2065 nm lasing is obtained for a threshold pump power of ~220 mW. With further increasing the pump power to ~325 mW, the unsaturated output power of the 2065 nm laser is about 82 mW and the corresponding slope efficiency is up to 68.8%. The effects of the gain fiber length on the lasing threshold, the slope efficiency, and the operating wavelength are also investigated. Our experimental results show that Ho3+-doped AlF3-TeO2-based glass fibers are promising gain media for 2.1 µm laser applications.

  9. Electrical property studies of neutron-transmutation-doped silicon

    International Nuclear Information System (INIS)

    Cleland, J.W.; Fleming, P.H.; Westbrook, R.D.; Wood, R.F.; Young, R.T.

    1978-01-01

    Results of studies of electrical properties of neutron-transmutation-doped (NTD) silicon are presented. Annealing requirements to remove lattice damage were obtained. The electrical role of clustered oxygen and defect-oxygen complex was investigated. An NTD epitaxial layer on a heavily doped n- or p- type substrate can be produced. There is no evident interaction between lithium introduced by diffusion and phosphorous 31 introduced by irradiation. There may be some type of pairing reaction between lithium 7 introduced by boron 10 fission and any remaining boron

  10. Temperature stability and electrical properties in La-doped KNN-based ceramics

    KAUST Repository

    Lv, Xiang; Wu, Jiagang; Zhu, Jianguo; Xiao, Dingquan; Zhang, Xixiang

    2018-01-01

    To improve the temperature stability and electrical properties of KNN‐based ceramics, we simultaneously consider the phase boundary and the addition of rare earth element (La), 0.96K0.5Na0.5Nb0.96Sb0.04O3‐0.04(Bi1‐xLax)0.5Na0.5ZrO3 (0 ≤ x ≤ 1.0) ceramics. More specifically, we investigate how the phase boundary and the addition of La3+ affect the phase structure, electrical properties, and temperature stability of the ceramic. We show that increasing the La3+ content leads to a change in phase structure, from a rhombohedral‐tetragonal (R‐T) phase coexistence to a cubic phase. More importantly, we show that the appropriate addition of La3+ (x = 0.2) can simultaneously improve the unipolar strain (from 0.127% to 0.147%) and the temperature stability (i.e., the unipolar strain of 0.147% remains unchanged when T is increased from 25 to 80°C). In addition, we find that the ceramics with x = 0.2 exhibit a large piezoelectric constant (d33) of ~430 pC/N, a high Curie temperature (TC) of ~240°C and a fatigue‐free behavior (after 106 electric cycles). The enhanced electrical properties mostly originate from the easy domain switching, whereas the improved temperature stability can be attributed to the R‐T phase boundary and the appropriate addition of La3+.

  11. Temperature stability and electrical properties in La-doped KNN-based ceramics

    KAUST Repository

    Lv, Xiang

    2018-04-16

    To improve the temperature stability and electrical properties of KNN‐based ceramics, we simultaneously consider the phase boundary and the addition of rare earth element (La), 0.96K0.5Na0.5Nb0.96Sb0.04O3‐0.04(Bi1‐xLax)0.5Na0.5ZrO3 (0 ≤ x ≤ 1.0) ceramics. More specifically, we investigate how the phase boundary and the addition of La3+ affect the phase structure, electrical properties, and temperature stability of the ceramic. We show that increasing the La3+ content leads to a change in phase structure, from a rhombohedral‐tetragonal (R‐T) phase coexistence to a cubic phase. More importantly, we show that the appropriate addition of La3+ (x = 0.2) can simultaneously improve the unipolar strain (from 0.127% to 0.147%) and the temperature stability (i.e., the unipolar strain of 0.147% remains unchanged when T is increased from 25 to 80°C). In addition, we find that the ceramics with x = 0.2 exhibit a large piezoelectric constant (d33) of ~430 pC/N, a high Curie temperature (TC) of ~240°C and a fatigue‐free behavior (after 106 electric cycles). The enhanced electrical properties mostly originate from the easy domain switching, whereas the improved temperature stability can be attributed to the R‐T phase boundary and the appropriate addition of La3+.

  12. Random laser based on Rhodamine 6G (Rh6G doped poly(methyl methacrylate (PMMA films coating on ZnO nanorods synthesized by hydrothermal oxidation

    Directory of Open Access Journals (Sweden)

    Hua Zhang

    Full Text Available Random laser based on Rh6G doped PMMA thin films coating on ZnO nanorods synthesized by a simple hydrothermal oxidation method has been demonstrated. This kind of random laser medium is based on waveguide structure consisting of ZnO nanorods, Rh6G doped PMMA film and air. By controlling the time of hydrothermal oxidation reaction, wheat-like and hexagonal prism ZnO nanorods have been successfully fabricated. The emission spectra of these gain mediums based on different ZnO nanorods are different. The one based on wheat-like ZnO nanorods mainly exhibits amplified spontaneous emission, and the other one based on hexagonal prism ZnO nanorods shows random laser emission. The threshold of the random laser medium is about 73.8 μJ/pulse, and the full width at half maximum (FWHM is around 2.1 nm. The emission spectra measured at different detecting angles reveal that the output direction is strongly confined in ±30° by the waveguide effect. Our experiments demonstrate a promising method to achieve organic random laser medium. Keywords: Random laser, ZnO nanorods, Hydrothermal oxidation, Rhodamine 6G (Rh6G, Poly(methyl methacrylate (PMMA

  13. The Effects of Doping and Processing on the Thermoelectric Properties of Platinum Diantimonide Based Materials for Cryogenic Peltier Cooling Applications

    Science.gov (United States)

    Waldrop, Spencer Laine

    The study of thermoelectrics is nearly two centuries old. In that time a large number of applications have been discovered for these materials which are capable of transforming thermal energy into electricity or using electrical work to create a thermal gradient. Current use of thermoelectric materials is in very niche applications with contemporary focus being upon their capability to recover waste heat. A relatively undeveloped region for thermoelectric application is focused upon Peltier cooling at low temperatures. Materials based on bismuth telluride semiconductors have been the gold standard for close to room temperature applications for over sixty years. For applications below room temperature, semiconductors based on bismuth antimony reign supreme with few other possible materials. The cause of this diculty in developing new, higher performing materials is due to the interplay of the thermoelectric properties of these materials. The Seebeck coecient, which characterizes the phenomenon of the conversion of heat to electricity, the electrical conductivity, and the thermal conductivity are all interconnected properties of a material which must be optimized to generate a high performance thermoelectric material. While for above room temperature applications many advancements have been made in the creation of highly ecient thermoelectric materials, the below room temperature regime has been stymied by ill-suited properties, low operating temperatures, and a lack of research. The focus of this work has been to investigate and optimize the thermoelectric properties of platinum diantimonide, PtSb2, a nearly zero gap semiconductor. The electronic properties of PtSb2 are very favorable for cryogenic Peltier applications, as it exhibits good conductivity and large Seebeck coecient below 200 K. It is shown that both n- and p-type doping may be applied to this compound to further improve its electronic properties. Through both solid solution formation and processing

  14. Mechanisms of catalytic activity in heavily coated hydrocracking catalysts

    Energy Technology Data Exchange (ETDEWEB)

    Millan, M.; Adell, C.; Hinojosa, C.; Herod, A.A.; Kandiyoti, R. [University of London Imperial College Science Technology & Medicine, London (United Kingdom). Dept. of Chemical Engineering

    2008-01-15

    Catalyst deactivation by coke deposition has a direct impact on the economic viability of heavy hydrocarbon upgrading processes, such as coal liquefaction and oil residue hydroprocessing. Coke deposition is responsible for rapid loss of catalytic activity and it mostly takes place in the early stages of hydrocracking. The effect of carbonaceous deposition on the catalytic activity of a chromium pillared montmorillonite has been studied in the present work. Its catalytic activity in hydrocracking a coal extract was evaluated based on the boiling point distributions of feed and products obtained by thermogravimetric analysis (TGA), and their characterisation by size exclusion chromatography (SEC) and UV-Fluorescence spectroscopy (UV-F). A large deposition on the catalyst was observed after two successive 2-hour long runs in which the catalyst recovered from the first run was reused in the second. The pillared clay retained its activity even though it showed high carbon loading, a large drop in surface area and complete apparent pore blockage. Some observations may contribute to explain this persistent catalytic activity. First, there is evidence suggesting the dynamic nature of the carbonaceous deposits, which continuously exchange material with the liquid, allowing catalytic activity to continue. Secondly, Scanning Electron Microscopy (SEM) on the used Cr montmorillonite has shown preferential deposition on some regions of the catalyst, which leaves a fraction of the surface relatively exposed. Finally, evidence from SEM coupled to X-ray microanalysis also suggest that deposits are thinner in areas where the active phase of the catalyst is present in higher concentrations. Hydrogenation on the active sites would make the deposits more soluble in the liquid cleaning of surrounding area from deposits.

  15. Phosphorescent inner filter effect-based sensing of xanthine oxidase and its inhibitors with Mn-doped ZnS quantum dots.

    Science.gov (United States)

    Tang, Dandan; Zhang, Jinyi; Zhou, Rongxin; Xie, Ya-Ni; Hou, Xiandeng; Xu, Kailai; Wu, Peng

    2018-05-10

    Overexpression and crystallization of uric acid have been recognized as the course of hyperuricemia and gout, which is produced via xanthine oxidase (XOD)-catalyzed oxidation of xanthine. Therefore, the medicinal therapy of hyperuricemia and gout is majorly based on the inhibition of the XOD enzymatic pathway. The spectroscopic nature of xanthine and uric acid, namely both absorption (near the ultraviolet region) and emission (non-fluorescent) characteristics, hinders optical assay development for XOD analysis. Therefore, the state-of-the-art analysis of XOD and the screening of XOD inhibitors are majorly based on chromatography. Here, we found the near ultraviolet absorption of uric acid overlapped well with the absorption of a large bandgap semiconductor quantum dots, ZnS. On the other hand, the intrinsic weak fluorescence of ZnS QDs can be substantially improved via transition metal ion doping. Therefore, herein, we developed an inner filter effect-based assay for XOD analysis and inhibitor screening with Mn-doped ZnS QDs. The phosphorescence of Mn-doped ZnS QDs could be quenched by uric acid generated from xanthine catabolism by XOD, leading to the phosphorescence turn-off detection of XOD with a limit of detection (3σ) of 0.02 U L-1. Furthermore, the existence of XOD inhibitors could inhibit the XOD enzymatic reaction, resulting in weakened phosphorescence quenching. Therefore, the proposed assay could also be explored for the facile screening analysis of XOD inhibitors, which is important for the potential medicinal therapy of hyperuricemia and gout.

  16. Geographic correlation between tapeworm carriers and heavily infected cysticercotic pigs.

    Directory of Open Access Journals (Sweden)

    Seth E O'Neal

    Full Text Available Neurocysticercosis is a leading cause of preventable epilepsy in the developing world. Sustainable community-based interventions are urgently needed to control transmission of the causative parasite, Taenia solium. We examined the geospatial relationship between live pigs with visible cysticercotic cysts on their tongues and humans with adult intestinal tapeworm infection (taeniasis in a rural village in northern Peru. The objective was to determine whether tongue-positive pigs could indicate high-risk geographic foci for taeniasis to guide targeted screening efforts. This approach could offer significant benefit compared to mass intervention.We recorded geographic coordinates of all village houses, collected stool samples from all consenting villagers, and collected blood and examined tongues of all village pigs. Stool samples were processed by enzyme-linked immunosorbent assay (ELISA for presence of Taenia sp. coproantigens indicative of active taeniasis; serum was processed by enzyme-linked immunoelectrotransfer blot for antibodies against T. solium cysticercosis (EITB LLGP and T. solium taeniasis (EITB rES33.Of 548 pigs, 256 (46.7% were positive for antibodies against cysticercosis on EITB LLGP. Of 402 fecal samples, 6 (1.5% were positive for the presence of Taenia sp. coproantigens. The proportion of coproantigen-positive individuals differed significantly between residents living within 100-meters of a tongue-positive pig (4/79, 5.1% and residents living >100 meters from a tongue-positive pig (2/323, 0.6% (p = 0.02. The prevalence of taeniasis was >8 times higher among residents living within 100 meters of a tongue-positive pig compared to residents living outside this range (adjusted PR 8.1, 95% CI 1.4-47.0.Tongue-positive pigs in endemic communities can indicate geospatial foci in which the risk for taeniasis is increased. Targeted screening or presumptive treatment for taeniasis within these high-risk foci may be an effective and

  17. Geographic Correlation between Tapeworm Carriers and Heavily Infected Cysticercotic Pigs

    Science.gov (United States)

    O'Neal, Seth E.; Moyano, Luz M.; Ayvar, Viterbo; Gonzalvez, Guillermo; Diaz, Andre; Rodriguez, Silvia; Wilkins, Patricia P.; Tsang, Victor C. W.; Gilman, Robert H.; Garcia, Hector H.; Gonzalez, Armando E.

    2012-01-01

    Background Neurocysticercosis is a leading cause of preventable epilepsy in the developing world. Sustainable community-based interventions are urgently needed to control transmission of the causative parasite, Taenia solium. We examined the geospatial relationship between live pigs with visible cysticercotic cysts on their tongues and humans with adult intestinal tapeworm infection (taeniasis) in a rural village in northern Peru. The objective was to determine whether tongue-positive pigs could indicate high-risk geographic foci for taeniasis to guide targeted screening efforts. This approach could offer significant benefit compared to mass intervention. Methods We recorded geographic coordinates of all village houses, collected stool samples from all consenting villagers, and collected blood and examined tongues of all village pigs. Stool samples were processed by enzyme-linked immunosorbent assay (ELISA) for presence of Taenia sp. coproantigens indicative of active taeniasis; serum was processed by enzyme-linked immunoelectrotransfer blot for antibodies against T. solium cysticercosis (EITB LLGP) and T. solium taeniasis (EITB rES33). Findings Of 548 pigs, 256 (46.7%) were positive for antibodies against cysticercosis on EITB LLGP. Of 402 fecal samples, 6 (1.5%) were positive for the presence of Taenia sp. coproantigens. The proportion of coproantigen-positive individuals differed significantly between residents living within 100-meters of a tongue-positive pig (4/79, 5.1%) and residents living >100 meters from a tongue-positive pig (2/323, 0.6%) (p = 0.02). The prevalence of taeniasis was >8 times higher among residents living within 100 meters of a tongue-positive pig compared to residents living outside this range (adjusted PR 8.1, 95% CI 1.4–47.0). Conclusions Tongue-positive pigs in endemic communities can indicate geospatial foci in which the risk for taeniasis is increased. Targeted screening or presumptive treatment for taeniasis within these high

  18. Knowledge of pharmacy students about doping, and the need for doping education: a questionnaire survey.

    Science.gov (United States)

    Shibata, Keita; Ichikawa, Koichi; Kurata, Naomi

    2017-08-11

    Anti-doping activities are carried out on a global scale. Based on these activities, the specialty of "sports pharmacist," which entails a deeper comprehension of doping, use of supplements, and appropriate drug use for athletes, was established in 2009 in Japan. It is difficult to say whether the education on doping is adequate for pharmacy students who will be eligible to become sports pharmacists. It is also unclear how well these students understand doping. Therefore, the aim of this study was to investigate pharmacy students' current knowledge of appropriate drug use, doping and use of supplements, and to explore the need for further education on these topics. A questionnaire survey was conducted from July 3rd to August 2nd in 2014 at Showa University in Japan. A total of 406 respondents (2nd- to 6th-year students) were assessed as eligible. Group comparison was used to compare those who had attended a lecture about doping and those who had not. Most of the students only knew the word doping and had not attended a lecture on the subject, but 72% of them expressed a desire to attend one. Over half did not know that the most common doping violation in Japan is unintentional doping, and were unfamiliar with certain past cases of doping. In addition, 41% did not know that over-the-counter medicines and dietary supplements might contain prohibited substances, and 87% were unaware that names of prohibited substances might not appear on the ingredient labels of dietary supplements. In contrast, attending a lecture on doping was effective in facilitating the acquisition of all these types of knowledge. It is important to provide more opportunities for appropriate education of pharmacy students on the topic of doping, given that interest exists and attending a lecture on the topic appears to be useful. More education about doping for pharmacy students would be as effective for anti-doping activities as is education of athletes.

  19. Effect of ‘A’-site non stoichiometry in strontium doped lanthanum ferrite based solid oxide fuel cell cathodes

    Energy Technology Data Exchange (ETDEWEB)

    Banerjee, Koyel; Mukhopadhyay, Jayanta, E-mail: jayanta_mu@cgcri.res.in; Barman, Madhurima; Basu, Rajendra N., E-mail: rnbasu@cgcri.res.in

    2015-12-15

    Highlights: • La{sub 1−x}Sr{sub x}Co{sub y}Fe{sub 1−y}O{sub 3−δ}, x = 0.4; y = 0.2 system varying La-site (0.6–0.54) are studied. • Combustion synthesis technique is used to prepare the powder samples. • Highest electrical conductivity observed with largest A-site deficit composition. • Lowest cathode polarization is found with the same composition (0.02 Ω cm{sup 2}). • Composition with largest A-site deficiency exhibits best performance (2.84 A cm{sup −2}). - Abstract: Effect of A-site non-stoichiometry in strontium doped lanthanum cobalt ferrite (La{sub 1−x}Sr{sub x}Co{sub y}Fe{sub 1−y}O{sub 3−δ}, x = 0.4; y = 0.2) is studied in a systematic manner with variation of ‘A’ site stoichiometry from 1 to 0.94. The perovskite based cathode compositions are synthesized by combustion synthesis. Powder characterizations reveal rhombohedral crystal structure with crystallite size ranging from 29 to 34 nm with minimum lattice spacing of 0.271 nm. Detailed sintering studies along with total DC electrical conductivities are evaluated in the bulk form with variation of sintering temperatures. The electrode polarizations are measured in the symmetric cell configuration by impedance spectroscopy which is found to be the lowest (0.02 Ω cm{sup 2} at 800 °C) for cathode having highest degree of ‘A’-site deficiency. The same cathode composition exhibits a current density of 2.84 A cm{sup −2} (at 0.7 V, 800 °C) in anode-supported single cell. An attempt has been made to correlate the trend of electrical behaviour with increasing ‘A’-site deficiency for such cathode compositions.

  20. Nitrogen-doped carbon capsules via poly(ionic liquid)-based layer-by-layer assembly.

    Science.gov (United States)

    Zhao, Qiang; Fellinger, Tim-Patrick; Antonietti, Markus; Yuan, Jiayin

    2012-07-13

    Layer-by-layer (LbL) assembly technique is applied for the first time for the preparation of nitrogen-doped carbon capsules. This approach uses colloid silica as template and two polymeric deposition components, that is, poly(ammonium acrylate) and a poly (ionic liquid) poly(3-cyanomethyl-1-vinylimidazolium bromide), which acts as both the carbon precursor and nitrogen source. Nitrogen-doped carbon capsules are prepared successfully by polymer wrapping, subsequent carbonization and template removal. The as-synthesized carbon capsules contain ≈7 wt% of nitrogen and have a structured specific surface area of 423 m(2) g(-1). Their application as supercapacitor has been briefly introduced. This work proves that LbL assembly methodology is available for preparing carbon structures of complex morphology. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Integrated oxygen sensors based on Mg-doped SrTiO3 fabricated by screen-printing

    DEFF Research Database (Denmark)

    Zheng, H.; Sørensen, Ole Toft

    2000-01-01

    This paper describes the fabrication and testing of Mg-doped SrTiO3 thick-film oxygen sensors with an integrated Pt heater. The results show that the sensor exhibits a P-o2 dependence according to R proportional to p(o2)(-1/4) in the considered P-o2 range(2.5 x 10(-5) bar

  2. Leakage current phenomena in Mn-doped Bi(Na,K)TiO_3-based ferroelectric thin films

    International Nuclear Information System (INIS)

    Walenza-Slabe, J.; Gibbons, B. J.

    2016-01-01

    Mn-doped 80(Bi_0_._5Na_0_._5)TiO_3-20(Bi_0_._5K_0_._5)TiO_3 thin films were fabricated by chemical solution deposition on Pt/TiO_2/SiO_2/Si substrates. Steady state and time-dependent leakage current were investigated from room temperature to 180 °C. Undoped and low-doped films showed space-charge-limited current (SCLC) at high temperatures. The electric field marking the transition from Ohmic to trap-filling-limited current increased monotonically with Mn-doping. With 2 mol. % Mn, the current was Ohmic up to 430 kV/cm, even at 180 °C. Modeling of the SCLC showed that all films exhibited shallow trap levels and high trap concentrations. In the regime of steady state leakage, there were also observations of negative differential resistivity and positive temperature coefficient of resistivity near room temperature. Both of these phenomena were confined to relatively low temperatures (below ∼60 °C). Transient currents were observed in the time-dependent leakage data, which was measured out to several hundred seconds. In the undoped films, these were found to be a consequence of oxygen vacancy migration modulating the electronic conductivity. The mobility and thermal activation energy for oxygen vacancies was extracted as μ_i_o_n ≈ 1.7 × 10"−"1"2 cm"2 V"−"1 s"−"1 and E_A_,_i_o_n ≈ 0.92 eV, respectively. The transient current displayed different characteristics in the 1 mol. % Mn-doped films which were not readily explained by oxygen vacancy migration.

  3. Effects of doping concentration ratio on electrical characterization in pseudomorphic HEMT-based MMIC switches for ICT system

    Science.gov (United States)

    Mun, Jae-Kyoung; Oh, Jung-Hun; Sung, Ho-Kun; Wang, Cong

    2015-12-01

    The effects of the doping concentration ratios between upper and lower silicon planar-doping layers on the DC and RF characteristics of the double planar doped pseudomorphic high electron mobility transistors (pHEMTs) are investigated. From the device simulation, an increase of maximum extrinsic transconductance and a decrease of total on- and off-state capacitances are observed, as well as an increase of the upper to lower planar-doping concentration ratios (UTLPDR), which give rise to an enhancement of the switching speed and isolation characteristics. On the basis of simulation results, two types of pHEMTs are fabricated with two different UTLPDRs of 4:1 and 1:2. After applying these two types' pHEMTs, single-pole-double-throw (SPDT) transmitter/receiver monolithic microwave integrated circuit (MMIC) switches are also designed and fabricated. The SPDT MMIC switch with a 4:1 UTLPDR shows an insertion loss of 0.58 dB, isolation of 40.2 dB, and switching speed of 100 ns, respectively, which correspondingly indicate a 0.23 dB lower insertion loss, 2.90 dB higher isolation and 2.5 times faster switching speed than those of 1:2 UTLPDR at frequency range of 2-6 GHz. From the simulation results and comparative studies, we propose that the UTLPDR must be greater than 4:1 for the best switching performance. With the abovementioned excellent performances, the proposed switch would be quite promising in the application of information and communications technology system.

  4. Tailoring Highly N-Doped Carbon Materials from Hexamine-Based MOFs: Superior Performance and New Insight into the Roles of N Configurations in Na-Ion Storage.

    Science.gov (United States)

    Liu, Sitong; Zhou, Jisheng; Song, Huaihe

    2018-03-01

    To prepare highly N-doped carbon materials (HNCs) as well as to determine the influence of N dopants on Na-ion storage performance, hexamine-based metal-organic frameworks are employed as new and efficient precursors in the preparation of HNCs. The HNCs possess reversible capacities as high as 160 and 142 mA h g -1 at 2 A g -1 (≈8 C) and 5 A g -1 (≈20 C), respectively, and maintain values of 145 and 123 mA h g -1 after 500 cycles, thus exhibiting excellent rate and long-term cyclic performance. Based on systematic analysis, a new insight into the roles of the different N configurations in Na-ion storage is proposed. The adsorption of Na ions on pyridinic-N (N-6) and pyrrolic-N (N-5) is fully irreversible, whereas the adsorption on graphitic-N (N-Q) is partially reversible and the adsorption on N-oxide (N-O) is fully reversible. More importantly, the N-6/N-Q ratio is an intrinsic parameter that reflects the relationship between the N configurations and carbon textures for N-doped carbons prepared from in situ pyrolysis of organic precursors. The cyclic stability and rate-performance improve with decreasing N-6/N-Q ratio. Therefore, this work is of great significance for the design of N-doped carbon electrodes with high performance for sodium ion batteries. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Simple preparation of fluorescent composite films based on cerium and europium doped LaF3 nanoparticles

    Science.gov (United States)

    Secco, Henrique de L.; Ferreira, Fabio F.; Péres, Laura O.

    2018-03-01

    The combination of materials to form hybrids with unique properties, different from those of the isolated components, is a strategy used to prepare functional materials with improved properties aiming to allow their application in specific fields. The doping of lanthanum fluoride with other rare earth elements is used to obtain luminescent particles, which may be useful to the manufacturing of electronic devices' displays and biological markers, for instance. The application of the powder of nanoparticles has limitations in some fields; to overcome this, the powder may be incorporated in a suitable polymeric matrix. In this work, lanthanum fluoride nanoparticles, undoped and doped with cerium and europium, were synthesized through the co-precipitation method in aqueous solution. Aiming the formation of solid state films, composites of nanoparticles in an elastomeric matrix, the nitrile rubber (NBR), were prepared. The flexibility and the transparency of the matrix in the regions of interest are advantages for the application of the luminescent composites. The composites were applied as films using the casting and the spin coating techniques and luminescent materials were obtained in the samples doped with europium and cerium. Scanning electron microscopy images showed an adequate dispersion of the particles in the matrix in both film formation techniques. Aggregates of the particles were detected in the samples which may affect the uniformity of the emission of the composites.

  6. Rare-earth doped gadolinia based phosphors for potential multicolor and white light emitting deep UV LEDs.

    Science.gov (United States)

    Bedekar, Vinila; Dutta, Dimple P; Mohapatra, M; Godbole, S V; Ghildiyal, R; Tyagi, A K

    2009-03-25

    Gadolinium oxide host and europium/dysprosium/terbium doped gadolinium oxide nanoparticles were synthesized using the sonochemical technique. Gadolinium oxide nanocrystals were also co-doped with total 2 mol% of Eu(3+)/Dy(3+),Eu(3+)/Tb(3+),Dy(3+)/Tb(3+), and also Eu(3+)/Dy(3+)/Tb(3+) ions, by the same method. The nanoparticles obtained were characterized using powder x-ray diffraction (XRD), transmission electron microscopy (TEM), and selected area electron diffraction (SAED) techniques. The size of the particles ranged from 15 to 30 nm. The triple doped samples showed multicolor emission on single wavelength excitation. The photoluminescence results were correlated with the lifetime data to get an insight into the luminescence and energy transfer processes taking place in the system. On excitation at 247 nm, the novel nanocrystalline Gd(2)O(3):RE (RE = Dy, Tb) phosphor resulted in having very impressive CIE chromaticity coordinates of x = 0.315 and y = 0.316, and a correlated color temperature of 6508 K, which is very close to standard daylight.

  7. Electrochemical dopamine sensor based on P-doped graphene: Highly active metal-free catalyst and metal catalyst support.

    Science.gov (United States)

    Chu, Ke; Wang, Fan; Zhao, Xiao-Lin; Wang, Xin-Wei; Tian, Ye

    2017-12-01

    Heteroatom doping is an effective strategy to enhance the catalytic activity of graphene and its hybrid materials. Despite a growing interest of P-doped graphene (P-G) in energy storage/generation applications, P-G has rarely been investigated for electrochemical sensing. Herein, we reported the employment of P-G as both metal-free catalyst and metal catalyst support for electrochemical detection of dopamine (DA). As a metal-free catalyst, P-G exhibited prominent DA sensing performances due to the important role of P doping in improving the electrocatalytic activity of graphene toward DA oxidation. Furthermore, P-G could be an efficient supporting material for loading Au nanoparticles, and resulting Au/P-G hybrid showed a dramatically enhanced electrocatalytic activity and extraordinary sensing performances with a wide linear range of 0.1-180μM and a low detection limit of 0.002μM. All these results demonstrated that P-G might be a very promising electrode material for electrochemical sensor applications. Copyright © 2017 Elsevier B.V. All rights reserved.

  8. Hybrid Films Based on a Bridged Silsesquioxane Doped with Goethite and Montmorillonite Nanoparticles as Sorbents of Wastewater Contaminants

    Directory of Open Access Journals (Sweden)

    Carolina V. Waiman

    2016-01-01

    Full Text Available The synthesis and characterization of silsesquioxane (SSO films with pendant dodecyl groups and doped with goethite (Gt or montmorillonite (MMT nanoparticles were carried out and the new materials tested as sorbents of diverse contaminants. The synthetic method used yielded SSO films with the inorganic substrates homogeneously distributed within the polymeric matrices. The new materials were characterized by SEM, FTIR, XRD, and DSC and tested to evaluate their capability for adsorbing metallic cations, organic dyes, and phosphate, frequent contaminants of industrial effluents. All films were found suitable for removing metallic cations. Results also showed that the SSO films undoped and doped with Gt are primarily apt for anionic compounds removal. Although the SSO films doped with MMT are capable of removing cationic contaminants from aqueous samples, the stiffness of the SSO matrix hinders MMT properties as an adsorbent. The possibility of dispersing nanoparticulate systems in the stable and chemically inert SSO matrices simplifies their application for contaminant removal, particularly because it makes the separation process of the absorbed pollutant from the treated medium easier.

  9. Analysis of the electronic structures of 3d transition metals doped CuGaS2 based on DFT calculations

    International Nuclear Information System (INIS)

    Zhao Zongyan; Zhou Dacheng; Yi Juan

    2014-01-01

    3d transition metals doped CuGaS 2 are considered as possible absorbing material candidates for intermediated band thin film solar cells. The electronic structure and optical properties of 3d transition metals doped CuGaS 2 are investigated by using density functional theory calculations with the GGA + U method in the present work. The doping with 3d transition metals does not obviously change the crystal structure, band gap, and optical absorption edge of the CuGaS 2 host. However, in the case of CuGa 1−x TM x S 2 (TM = Ti, V, Cr, Fe, and Ni), there is at least one distinct isolated impurity energy level in the band gap, and the optical absorption is enhanced in the ultraviolet-light region. Therefore, these materials are ideal absorber material candidates for intermediated band thin film solar cells. The calculated results are very well consistent with experimental observations, and could better explain them. (semiconductor materials)

  10. Simple Hydrogen Plasma Doping Process of Amorphous Indium Gallium Zinc Oxide-Based Phototransistors for Visible Light Detection.

    Science.gov (United States)

    Kang, Byung Ha; Kim, Won-Gi; Chung, Jusung; Lee, Jin Hyeok; Kim, Hyun Jae

    2018-02-28

    A homojunction-structured amorphous indium gallium zinc oxide (a-IGZO) phototransistor that can detect visible light is reported. The key element of this technology is an absorption layer composed of hydrogen-doped a-IGZO. This absorption layer is fabricated by simple hydrogen plasma doping, and subgap states are induced by increasing the amount of hydrogen impurities. These subgap states, which lead to a higher number of photoexcited carriers and aggravate the instability under negative bias illumination stress, enabled the detection of a wide range of visible light (400-700 nm). The optimal condition of the hydrogen-doped absorption layer (HAL) is fabricated at a hydrogen partial pressure ratio of 2%. As a result, the optimized a-IGZO phototransistor with the HAL exhibits a high photoresponsivity of 1932.6 A/W, a photosensitivity of 3.85 × 10 6 , and a detectivity of 6.93 × 10 11 Jones under 635 nm light illumination.

  11. Wideband and flat-gain amplifier based on high concentration erbium-doped fibres in parallel double-pass configuration

    International Nuclear Information System (INIS)

    Hamida, B A; Cheng, X S; Harun, S W; Naji, A W; Arof, H; Al-Khateeb, W; Khan, S; Ahmad, H

    2012-01-01

    A wideband and flat gain erbium-doped fibre amplifier (EDFA) is demonstrated using a hybrid gain medium of a zirconiabased erbium-doped fibre (Zr-EDF) and a high concentration erbium-doped fibre (EDF). The amplifier has two stages comprising a 2-m-long ZEDF and 9-m-long EDF optimised for C- and L-band operations, respectively, in a double-pass parallel configuration. A chirp fibre Bragg grating (CFBG) is used in both stages to ensure double propagation of the signal and thus to increase the attainable gain in both C- and L-band regions. At an input signal power of 0 dBm, a flat gain of 15 dB is achieved with a gain variation of less than 0.5 dB within a wide wavelength range from 1530 to 1605 nm. The corresponding noise figure varies from 6.2 to 10.8 dB within this wavelength region.

  12. Photovoltaic Performance Enhancement of Silicon Solar Cells Based on Combined Ratios of Three Species of Europium-Doped Phosphors

    Directory of Open Access Journals (Sweden)

    Wen-Jeng Ho

    2018-05-01

    Full Text Available This paper presents a scheme for the enhancement of silicon solar cells in terms of luminescent emission band and photovoltaic performance. The proposed devices are coated with an luminescent down-shifting (LDS layer comprising three species of europium (Eu-doped phosphors mixed within a silicate film (SiO2 using a spin-on film deposition. The three species of phosphor were mixed at ratios of 0.5:1:1.5, 1:1:1, or 1.5:1:0.5 in weight percentage (wt %. The total quantity of Eu-doped phosphors in the silicate solution was fixed at 3 wt %. The emission wavelengths of the Eu-doped phosphors were as follows: 518 nm (specie-A, 551 nm (specie-B, and 609 nm (specie-C. We examined the extended luminescent emission bands via photoluminescence measurements at room temperature. Closely matching the luminescent emission band to the high responsivity band of the silicon semiconductor resulted in good photovoltaic performance. Impressive improvements in efficiency were observed in all three samples: 0.5:1:1.5 (20.43%, 1:1:1 (19.67%, 1.5:1:0.5 (16.81%, compared to the control with a layer of pure SiO2 (13.80%.

  13. Photovoltaic Performance Enhancement of Silicon Solar Cells Based on Combined Ratios of Three Species of Europium-Doped Phosphors.

    Science.gov (United States)

    Ho, Wen-Jeng; You, Bang-Jin; Liu, Jheng-Jie; Bai, Wen-Bin; Syu, Hong-Jhang; Lin, Ching-Fuh

    2018-05-18

    This paper presents a scheme for the enhancement of silicon solar cells in terms of luminescent emission band and photovoltaic performance. The proposed devices are coated with an luminescent down-shifting (LDS) layer comprising three species of europium (Eu)-doped phosphors mixed within a silicate film (SiO₂) using a spin-on film deposition. The three species of phosphor were mixed at ratios of 0.5:1:1.5, 1:1:1, or 1.5:1:0.5 in weight percentage (wt %). The total quantity of Eu-doped phosphors in the silicate solution was fixed at 3 wt %. The emission wavelengths of the Eu-doped phosphors were as follows: 518 nm (specie-A), 551 nm (specie-B), and 609 nm (specie-C). We examined the extended luminescent emission bands via photoluminescence measurements at room temperature. Closely matching the luminescent emission band to the high responsivity band of the silicon semiconductor resulted in good photovoltaic performance. Impressive improvements in efficiency were observed in all three samples: 0.5:1:1.5 (20.43%), 1:1:1 (19.67%), 1.5:1:0.5 (16.81%), compared to the control with a layer of pure SiO₂ (13.80%).

  14. [Doping and urologic tumors].

    Science.gov (United States)

    Pinto, F; Sacco, E; Volpe, A; Gardi, M; Totaro, A; Calarco, A; Racioppi, M; Gulino, G; D'Addessi, A; Bassi, P F

    2010-01-01

    Several substances such as growth hormone (GH), erythropoietin (Epo), and anabolic steroids (AS) are improperly utilized to increase the performance of athletes. Evaluating the potential cancer risk associated with doping agents is difficult since these drugs are often used at very high doses and in combination with other licit or illicit drugs. The GH, via its mediator, the insulin-like growth factor 1 (IGF-1), is involved in the development and progression of cancer. Animal studies suggested that high levels of GH/IGF-1 increase progression of androgen-independent prostate cancer. Clinical data regarding prostate cancer are mostly based on epidemiological studies or indirect data such as IGF-1 high levels in patients with prostate cancer. Even if experimental studies showed a correlation between Epo and cancer, no clinical data are currently available on cancer development related to Epo as a doping agent. Androgens are involved in prostate carcinogenesis modulating genes that regulate cell proliferation, apoptosis and angiogenesis. Most information on AS is anecdotal (case reports on prostate, kidney and testicular cancers). Prospective epidemiologic studies failed to support the hypothesis that circulating androgens are positively associated with prostate cancer risk. Currently, clinical and epidemiological studies supporting association between doping and urological neoplasias are not available. Nowadays, exposure to doping agents starts more prematurely with a consequent longer exposition period; drugs are often used at very high doses and in combination with other licit or illicit drugs. Due to all these elements it is impossible to predict all the side effects, including cancer; more detailed studies are therefore necessary.

  15. Doping profile measurements in silicon using terahertz time domain spectroscopy (THz-TDS) via electrochemical anodic oxidation

    Science.gov (United States)

    Tulsyan, Gaurav

    Doping profiles are engineered to manipulate device properties and to determine electrical performances of microelectronic devices frequently. To support engineering studies afterward, essential information is usually required from physically characterized doping profiles. Secondary Ion Mass Spectrometry (SIMS), Spreading Resistance Profiling (SRP) and Electrochemical Capacitance Voltage (ECV) profiling are standard techniques for now to map profile. SIMS yields a chemical doping profile via ion sputtering process and owns a better resolution, whereas ECV and SRP produce an electrical doping profile detecting free carriers in microelectronic devices. The major difference between electrical and chemical doping profiles is at heavily doped regions greater than 1020 atoms/cm3. At the profile region over the solubility limit, inactive dopants induce a flat plateau and detected by electrical measurements only. Destructive techniques are usually designed as stand-alone systems to study impurities. For an in-situ process control purpose, non-contact methods, such as ellipsometry and non-contact capacitance voltage (CV) techniques are current under development. In this theses work, terahertz time domain spectroscopy (THz-TDS) is utilized to achieve electrical doping profile in both destructive and non-contact manners. In recent years the Terahertz group at Rochester Institute Technology developed several techniques that use terahertz pulses to non-destructively map doping profiles. In this thesis, we study a destructive but potentially higher resolution version of the terahertz based approach to map the profile of activated dopants and augment the non-destructive approaches already developed. The basic idea of the profile mapping approach developed in this MS thesis is to anodize, and thus oxidize to silicon dioxide, thin layers (down to below 10 nm) of the wafer with the doping profile to be mapped. Since the dopants atoms and any free carriers in the silicon oxide thin

  16. The origin of double peak electric field distribution in heavily irradiated silicon detectors

    CERN Document Server

    Eremin, V; Li, Z

    2002-01-01

    The first observation of double peak (DP) electric field distribution in heavily neutron irradiated (>10 sup 1 sup 4 n/cm sup 2) semiconductor detectors has been published about 6 yr ago. However, this effect was not quantitatively analyzed up to now. The explanation of the DP electric field distribution presented in this paper is based on the properties of radiation induced deep levels in silicon, which act as deep traps, and on the distribution of the thermally generated free carrier concentration in the detector bulk. In the frame of this model, the earlier published considerations on the so-called 'double junction (DJ) effect' are discussed as well. The comparison of the calculated electric field profiles at different temperatures with the experimental ones allows one to determine a set of deep levels. This set of deep levels, and their charge filling status are essential to the value and the distribution of space charge in the space charge region in the range of 305-240 K, which is actual temperature ran...

  17. A highly sensitive chemical gas detecting device based on N-doped ZnO as a modified nanostructure media: A DFT+NBO analysis

    Science.gov (United States)

    Abbasi, Amirali; Sardroodi, Jaber Jahanbin

    2018-02-01

    We presented a density functional theory study of the adsorption of O3 and NO2 molecules on ZnO nanoparticles. Various adsorption geometries of O3 and NO2 over the nanoparticles were considered. For both O3 and NO2 adsorption systems, it was found that the adsorption on the N-doped nanoparticle is more favorable in energy than that on the pristine one. Therefore, the N-doped ZnO has a better efficiency to be utilized as O3 and NO2 detection device. For all cases, the binding sites were located on the zinc atoms of the nanoparticle. The charge analysis based on natural bond orbital (NBO) analysis indicates that charge was transferred from the surface to the adsorbed molecule. The projected density of states of the interacting atoms represent the formation of chemical bonds at the interface region. Molecular orbitals of the adsorption systems indicate that the HOMOs were mainly localized on the adsorbed O3 and NO2 molecules, whereas the electronic densities in the LUMOs were dominant at the ZnO nanocrystal surface. By examining the distribution of spin densities, we found that the magnetization was mainly located over the adsorbed molecules. For NO2 adsorbate, we found that the symmetric and asymmetric stretches were shifted to a lower frequency. The bending stretch mode was shifted to the higher frequency. Our DFT results thus provide a theoretical basis for why the adsorption of O3 and NO2 molecules on the N-doped ZnO nanoparticles may increase, giving rise to design and development of innovative and highly efficient sensor devices for O3 and NO2 recognition.

  18. Effect of Ti Doping to Maintain Structural Disorder in InOx-Based Thin-Film Transistors Fabricated by RF Magnetron Sputtering

    Science.gov (United States)

    Aikawa, Shinya

    2017-12-01

    The effect of Ti doping in an indium oxide (InOx)-based semiconductor is investigated for the thin-film transistor (TFT) property and crystal structure of the film. InOx and Ti-doped InOx (InTiOx) films deposited by RF magnetron sputtering under the same O2 partial pressure conditions were systematically compared. The TFT behavior of the InOx showed higher conductivity than that of the InTiOx and was drastically changed to metallic conduction after annealing at 150 °C. Under the annealing conditions when the electrical transition to the metallic behavior occurred, the InOx film was crystallized. The X-ray diffraction analysis revealed that the shrinkage of the In2O3 unit cell is pronounced in the case of InOx films. Thus, Ti dopants may play the role as a suppressor for shrinkage of the unit cell, i.e. maintaining neighboring In-In distances, in addition to suppression of oxygen vacancies. The In-In distance, which is related to the overlapping of In 5 s orbitals, is considered to be one of the key factor for which InOx-based materials are utilized as conducting films or semiconducting channels.

  19. Bright white upconversion luminescence from Er3+/Tm3+/Yb3+-doped titanate-based glasses prepared by aerodynamic levitation method

    Science.gov (United States)

    Zhang, Minghui; Yu, Jianding; Jiang, Wan; Liu, Yan; Ai, Fei; Wen, Haiqin; Jiang, Meng; Yu, Huimei; Pan, Xiuhong; Tang, Meibo; Gai, Lijun

    2017-10-01

    Aerodynamic levitation method was employed to prepare Er3+/Tm3+/Yb3+-doped titanate-based glasses. DTA results show that the glass performs high thermal stability with the glass transition temperature of 799 °C. The interaction among rare earth ions has been discussed by adjusting the relative concentration. Er3+ ions can quench the upconversion luminescence of Tm3+ ions. Tm3+ ions play a strong role in quenching the emissions of Er3+ and Tm3+ when the content of Tm3+ ions is greater than or equal 0.05. From the view of the ratio of red emission to green emission, Tm3+ ions can improve the red emission of Er3+ ions to some extent in contrast with the green emissions of Er3+ ions. 980 nm incident laser can be efficiently absorbed by Yb3+ ions. The relative intensity of red, green, and blue upconversion luminescence has been tuned to obtain white light. The composition with white upconversion luminescence of the color coordinate (0.291, 0.3292) has been found. Moreover, white upconversion luminescence mechanism is a two-photon process of ET, ESA, and cooperative sensitization. Rare earth ions doped titanate-based glasses with bright upconversion luminescence perform potential applications in color display, back light, et al.

  20. Simultaneous aluminizing and chromizing of steels to form (Fe,Cr){sub 3}Al coatings and Ge-doped silicide coatings of Cr-Zr base alloys

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, M.; He, Y.R.; Rapp, R.A. [Ohio State Univ., Columbus, OH (United States). Dept. of Materials Science and Engineering

    1997-12-01

    A halide-activated cementation pack involving elemental Al and Cr powders has been used to achieve surface compositions of approximately Fe{sub 3}Al plus several percent Cr for low alloy steels (T11, T2 and T22) and medium carbon steel (1045 steel). A two-step treatment at 925 C and 1150 C yields the codeposition and diffusion of aluminum and chromium to form dense and uniform ferrite coatings of about 400 {micro}m thickness, while preventing the formation of a blocking chromium carbide at the substrate surfaces. Upon cyclic oxidation in air at 700 C, the coated steel exhibits a negligible 0.085 mg/cm{sup 2} weight gain for 1900 one-hour cycles. Virtually no attack was observed on coated steels tested at ABB in simulated boiler atmospheres at 500 C for 500 hours. But coatings with a surface composition of only 8 wt% Al and 6 wt% Cr suffered some sulfidation attack in simulated boiler atmospheres at temperatures higher than 500 C for 1000 hours. Two developmental Cr-Zr based Laves phase alloys (CN129-2 and CN117(Z)) were silicide/germanide coated. The cross-sections of the Ge-doped silicide coatings closely mimicked the microstructure of the substrate alloys. Cyclic oxidation in air at 1100 C showed that the Ge-doped silicide coating greatly improved the oxidation resistance of the Cr-Zr based alloys.