High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

Energy Technology Data Exchange (ETDEWEB)

Tu, Nguyen Thanh [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physics, Ho Chi Minh City University of Pedagogy, 280, An Duong Vuong Street, District 5, Ho Chi Minh City 748242 (Viet Nam); Hai, Pham Nam [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Anh, Le Duc [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

2016-05-09

We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

Heavily doped n-type a-IGZO by F plasma treatment and its thermal stability up to 600 °C

Science.gov (United States)

Um, Jae Gwang; Jang, Jin

2018-04-01

We report the electrical properties and thermal stability of heavily doped, amorphous indium-gallium-zinc-oxide (a-IGZO) treated with fluorine (F) plasma. When the F doping concentration in a-IGZO is 17.51 × 1021/cm-3, the a-IGZO exhibits a carrier concentration of 6 × 1019 cm-3, a resistivity of 3 × 10-3 Ω cm, and a Hall mobility of 20 cm2/V s. This indicates that F is a suitable n-type dopant in a-IGZO. The similarity of the ionic radius of F to that of oxygen (O) allows substitutional doping by replacing O with F or the occupation of the oxygen vacancy (VO) site by F and consequent reduction in defect density. The semiconducting property of a-IGZO can change into metallic behavior by F doping. The defect passivation by F incorporation is confirmed by the XPS depth profile, which reveals the significant reduction in the VO concentration due to the formation of In-F bonds. The heavily doped a-IGZO exhibits thermally stable conductivity up to 600 °C annealing and thus can be widely used for the ohmic contact of a-IGZO devices.

Einstein's photoemission emission from heavily-doped quantized structures

CERN Document Server

Ghatak, Kamakhya Prasad

2015-01-01

This monograph solely investigates the Einstein's Photoemission(EP) from Heavily Doped(HD) Quantized Structures on the basis of newly formulated electron dispersion laws. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The EP in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields  that control the studies of such quantum effect devices. The suggestions for the experimental determinations of different important physical quantities in HD 2D and 3D materials  and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring   physical properties in the presence of intense light waves w...

Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films

Directory of Open Access Journals (Sweden)

T. Yokoya, T. Nakamura, T. Matushita, T. Muro, H. Okazaki, M. Arita, K. Shimada, H. Namatame, M. Taniguchi, Y. Takano, M. Nagao, T. Takenouchi, H. Kawarada and T. Oguchi

2006-01-01

Full Text Available We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES of microwave plasma-assisted chemical vapor deposition diamond films with different B concentrations in order to study the origin of the metallic behavior of superconducting diamond. SXARPES results clearly show valence band dispersions with a bandwidth of ~23 eV and with a top of the valence band at gamma point in the Brillouin zone, which are consistent with the calculated valence band dispersions of pure diamond. Boron concentration-dependent band dispersions near the Fermi level (EF exhibit a systematic shift of EF, indicating depopulation of electrons due to hole doping. These SXARPES results indicate that diamond bands retain for heavy boron doping and holes in the diamond band are responsible for the metallic states leading to superconductivity at low temperature. A high-resolution photoemission spectroscopy spectrum near EF of a heavily boron-doped diamond superconductor is also presented.

Near-Field Imaging of Free Carriers in ZnO Nanowires with a Scanning Probe Tip Made of Heavily Doped Germanium

Science.gov (United States)

Sakat, Emilie; Giliberti, Valeria; Bollani, Monica; Notargiacomo, Andrea; Pea, Marialilia; Finazzi, Marco; Pellegrini, Giovanni; Hugonin, Jean-Paul; Weber-Bargioni, Alexander; Melli, Mauro; Sassolini, Simone; Cabrini, Stefano; Biagioni, Paolo; Ortolani, Michele; Baldassarre, Leonetta

2017-11-01

A novel scanning probe tip made of heavily doped semiconductor is fabricated and used instead of standard gold-coated tips in infrared scattering-type near-field microscopy. Midinfrared near-field microscopy experiments are conducted on ZnO nanowires with a lateral resolution better than 100 nm, using tips made of heavily electron-doped germanium with a plasma frequency in the midinfrared (plasma wavelength of 9.5 μ m ). Nanowires embedded in a dielectric matrix are imaged at two wavelengths, 11.3 and 8.0 μ m , above and below the plasma wavelength of the tips. An opposite sign of the imaging contrasts between the nanowire and the dielectric matrix is observed at the two infrared wavelengths, indicating a clear role of the free-electron plasma in the heavily doped germanium tip in building the imaging contrast. Electromagnetic simulations with a multispherical dipole model accounting for the finite size of the tip are well consistent with the experiments. By comparison of the simulated and measured imaging contrasts, an estimate for the local free-carrier density in the investigated ZnO nanowires in the low 1019 cm-3 range is retrieved. The results are benchmarked against the scattering intensity and phase maps obtained on the same sample with a gold-coated probe tip in pseudoheterodyne detection mode.

Unusual near-band-edge photoluminescence at room temperature in heavily-doped ZnO:Al thin films prepared by pulsed laser deposition

International Nuclear Information System (INIS)

Mohanty, Bhaskar Chandra; Yeon, Deuk Ho; Das, Sachindra Nath; Kwak, Ji Hye; Yoon, Kyung Hoon; Cho, Yong Soo

2013-01-01

Room temperature photoluminescence (PL) properties of heavily-doped ZnO:Al thin films (with carrier concentration n in the range of 5–20 × 10 20 cm −3 ) prepared by pulsed laser deposition have been investigated. Despite their high carrier concentration, the films exhibited strong room temperature near-band-edge bound excitons at ∼3.34 eV and an unusual peak at ∼3.16 eV, and negligible deep-level emission even for the films deposited at a temperature as low as 25 °C. The radiative efficiency of the films increased with growth temperature as a result of increased n and improved crystallinity. A large blue shift of optical band gap was observed, which is consistent with the n-dependent Burstein–Moss and band gap-renormalization effects. Comparison of the results of the PL and optical measurements revealed a large Stokes shift that increased with increase in n. It has been explained by a model based on local potential fluctuations caused by randomly-distributed doping impurities. - Highlights: • Studied PL properties of heavily-doped ZnO:Al films grown by PLD. • Unusual strong near-band-edge emissions and negligible deep-level emission at RT. • Increased optical band gap with growth temperature and thus carrier concentration. • Stokes shift and PL peak width increased with carrier concentration. • Results explained by a model based on local potential fluctuations

Influence of quantum confinement on the carrier contribution to the elastic constants in quantum confined heavily doped non-linear optical and optoelectronic materials: simplified theory and the suggestion for experimental determination

International Nuclear Information System (INIS)

Baruah, D; Choudhury, S; Singh, K M; Ghatak, K P

2007-01-01

In this paper we study the carrier contribution to elastic constants in quantum confined heavily doped non-linear optical compounds on the basis of a newly formulated electron dispersion law taking into account the anisotropies of the effective electron masses and spin orbit splitting constants together with the proper inclusion of the crystal field splitting in the Hamiltonian within the framework of k.p formalism. All the results of heavily doped three, and two models of Kane for heavily doped III-V materials form special cases of our generalized analysis. It has been found, taking different heavily doped quantum confined materials that, the carrier contribution to the elastic constants increases with increase in electron statistics and decrease in film thickness in ladder like manners for all types of quantum confinements with different numerical values which are totally dependent on the energy band constants. The said contribution is greatest in quantum dots and least in quantum wells together with the fact the heavy doping enhances the said contributions for all types of quantum confined materials. We have suggested an experimental method of determining the carrier contribution to the elastic constants in nanostructured materials having arbitrary band structures

Features of the band structure and conduction mechanisms of n-HfNiSn heavily doped with Y

Energy Technology Data Exchange (ETDEWEB)

Romaka, V. A., E-mail: vromaka@polynet.lviv.ua [National Academy of Sciences of Ukraine, Pidstryhach Institute for Applied Problems of Mechanics and Mathematics (Ukraine); Rogl, P. [Universitet Wien, Institut für Physikalische Chemie (Austria); Romaka, V. V. [National University “Lvivska Politechnika” (Ukraine); Kaczorowski, D. [Polish Academy of Sciences, Institute of Low Temperature and Structure Research (Poland); Krayovskyy, V. Ya. [National University “Lvivska Politechnika” (Ukraine); Stadnyk, Yu. V.; Horyn, A. M. [Ivan Franko Lviv National University (Ukraine)

2017-02-15

The crystalline and electronic structures, energy, kinetic, and magnetic characteristics of n-HfNiSn semiconductor heavily doped with Y acceptor impurity are studied in the ranges: T = 80–400 K, N{sub A}{sup Y} ≈ 1.9 × 10{sup 20}–5.7 × 10{sup 21} cm{sup –3} (x = 0.01–0.30), and H ≤ 10 kG. The nature of the mechanism of structural defect generation is determined, which leads to a change in the band gap and the degree of semiconductor compensation, the essence of which is the simultaneous reduction and elimination of structural donor-type defects as a result of the displacement of ~1% of Ni atoms from the Hf (4a) site, and the generation of structural acceptor-type defects by substituting Hf atoms with Y atoms at the 4a site. The results of calculations of the electronic structure of Hf{sub 1–x}Y{sub x}NiSn are in agreement with the experimental data. The discussion is performed within the Shklovskii–Efros model of a heavily doped and compensated semiconductor.

Measurement of surface recombination velocity on heavily doped indium phosphide

International Nuclear Information System (INIS)

Jenkins, P.; Ghalla-Goradia, M.; Faur, M.; Bailey, S.

1990-01-01

The controversy surrounding the published low values of surface recombination velocity (SRV) in n-InP, solidified in recent years when modeling of existing n/p InP solar cells revealed that the front surface SRV had to be higher than 1 x 10 6 cm/sec in order to justify the poor blue response that is characteristic of all n/p InP solar cells. In this paper, SRV on heavily doped (>10 18 cm -3 )n-type and p-type InP is measured as a function of surface treatment. For the limited range of substrates and surface treatments studied, SRV and surface stability depend strongly on the surface treatment. SRVs of ∼10 5 cm/sec in both p-type and n-type InP are obtainable, but in n-type the low SRV surfaces were unstable, and the only stable surfaces on n-type had SRVs of >10 6 cm/sec

Heavily-doped 2D-quantized structures and the Einstein relation

CERN Document Server

Ghatak, Kamakhya P

2015-01-01

This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped(HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nanodevices and strong external photo excitation (for measuring photon induced physical properties) are also discussed in this context. The influence of crossed electric and quantizing ma...

Anomalous transmission through heavily doped conducting polymer films with periodic subwavelength hole array

Science.gov (United States)

Matsui, Tatsunosuke; Vardeny, Z. Valy; Agrawal, Amit; Nahata, Ajay; Menon, Reghu

2006-08-01

We observed resonantly enhanced (or anomalous transmission) terahertz transmission through two-dimensional (2D) periodic arrays of subwavelength apertures with various periodicities fabricated on metallic organic conducting polymer films of polypyrrole heavily doped with PF 6 molecules [PPy(PF6)]. The anomalous transmission spectra are in good agreement with a model involving surface plasmon polariton excitations on the film surfaces. We also found that the resonantly enhanced transmission peaks are broader in the exotic metallic PPy(PF6) films compared to those formed in 2D aperture array in regular metallic films such as silver, indicating that the surface plasmon polaritons on the PPy(PF6) film surfaces have higher attenuation.

Prospective high thermoelectric performance of the heavily p-doped half-Heusler compound CoVSn

International Nuclear Information System (INIS)

Shi, Hongliang; Ming, Wenmei; Parker, David S.; Du, Mao-Hua; Singh, David J.

2017-01-01

The electronic structure and transport properties of the half-Heusler compound CoVSn are studied in this paper systematically by combining first-principles electronic structure calculations and Boltzmann transport theory. The band structure at the valence-band edge is complex with multiple maxima derived from hybridized transition element d states. The result is a calculated thermopower larger than 200 μV /Κ within a wide range of doping concentrations and temperatures for heavily doped p-type CoVSn. The thermoelectric properties additionally benefit from the corrugated shapes of the hole pockets in our calculated isoenergy surfaces. Our calculated power factor S"2σ/τ (with respect to an average unknown scattering time) of CoVSn is comparable to that of FeNbSb. A smaller lattice thermal conductivity can be expected from the smaller group velocities of acoustical modes compared to FeNbSb. Finally, overall, good thermoelectric performance for CoVSn can be expected by considering the electronic transport and lattice thermal conductivity.

Comparison of the Thermal Degradation of Heavily Nb-Doped and Normal PZT Thin Films.

Science.gov (United States)

Yang, Jeong-Suong; Kang, YunSung; Kang, Inyoung; Lim, SeungMo; Shin, Seung-Joo; Lee, JungWon; Hur, Kang Heon

2017-03-01

The degradation of niobium-doped lead zirconate titanate (PZT) and two types of PZT thin films were investigated. Undoped PZT, two-step PZT, and heavily Nb-doped PZT (PNZT) around the morphotropic phase boundary were in situ deposited under optimum condition by RF-magnetron sputtering. All 2- [Formula: see text]-thick films had dense perovskite columnar grain structure and self-polarized (100) dominant orientation. PZT thin films were deposited on Pt/TiO x bottom electrode on Si wafer, and PNZT thin film was on Ir/TiW electrode with the help of orientation control. Sputtered PZT films formed on microelectromechanical system (MEMS) gyroscope and the degradation rates were compared at different temperatures. PNZT showed the best resistance to the thermal degradation, followed by two-step PZT. To clarify the effect of oxygen vacancies on the degradation of the film at high temperature, photoluminescence measurement was conducted, which confirmed that oxygen vacancy rate was the lowest in heavy PNZT. Nb-doping PZT thin films suppressed the oxygen deficit and made high imprint with self-polarization. This defect distribution and high internal field allowed PNZT thin film to make the piezoelectric sensors more stable and reliable at high temperature, such as reflow process of MEMS packaging.

Effect of impurity correlation on the density of states in slightly compensated heavily doped semiconductors

International Nuclear Information System (INIS)

Doan Nhat Quang; Nguyen Nhu Dat; Dinh Van An

1993-07-01

A theory is developed of the electron density of states (DOS) in slightly compensated heavily doped semiconductors which undergo a thermal treatment. The calculation is carried out within the semiclassical approach to the random impurity field, taking adequately into account high-temperature correlation among the impurities and low temperature screening due to the free carriers as well. Then, a simple analytic expression for the DOS is obtained which exhibits the same energy dependence as in the case of a random impurity distribution, but now with some correlation-induced changes in the coefficients. A numerical estimation on non-compensated n-type sample of GaAs at a doping level of 5 x 10 18 cm -3 shows that in the tail region the correlated DOS turns out to be somewhat larger and cut less sharply than the random one. (author). 45 refs, 2 figs, 1 tab

Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN

International Nuclear Information System (INIS)

Wu, L L; Zhao, D G; Jiang, D S; Chen, P; Le, L C; Li, L; Liu, Z S; Zhang, S M; Zhu, J J; Wang, H; Zhang, B S; Yang, H

2013-01-01

The growth condition of thin heavily Mg-doped GaN capping layer and its effect on ohmic contact formation of p-type GaN were investigated. It is confirmed that the excessive Mg doping can effectively enhance the Ni/Au contact to p-GaN after annealing at 550 °C. When the flow rate ratio between Mg and Ga gas sources is 6.4% and the layer width is 25 nm, the capping layer grown at 850 °C exhibits the best ohmic contact properties with respect to the specific contact resistivity (ρ c ). This temperature is much lower than the conventional growth temperature of Mg-doped GaN, suggesting that the deep-level-defect induced band may play an important role in the conduction of capping layer. (paper)

High Thermoelectric Performance by Convergence of Bands in IV-VI Semiconductors, Heavily Doped PbTe, and Alloys/Nanocomposites

Science.gov (United States)

Snyder, G. Jeffrey (Inventor); Pei, Yanzhong (Inventor)

2015-01-01

The present invention teaches an effective mechanism for enhancing thermoelectric performance through additional conductive bands. Using heavily doped p-PbTe materials as an example, a quantitative explanation is disclosed, as to why and how these additional bands affect the figure of merit. A high zT of approaching 2 at high temperatures makes these simple, likely more stable (than nanostructured materials) and Tl-free materials excellent for thermoelectric applications.

Carrier compensation mechanism in heavily Nb-doped anatase Ti{sub 1-x}Nb{sub x}O{sub 2+{delta}} epitaxial thin films

Energy Technology Data Exchange (ETDEWEB)

Nogawa, H; Chikamatsu, A; Hirose, Y; Hasegawa, T [Department of Chemistry, University of Tokyo, Tokyo 113-0033 (Japan); Nakao, S [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Kumigashira, H; Oshima, M, E-mail: chikamatsu@chem.s.u-tokyo.ac.jp [Department of Applied Chemistry, University of Tokyo, Tokyo 113-8656 (Japan)

2011-09-14

We investigated the electronic structures of anatase Ti{sub 1-x}Nb{sub x}O{sub 2+{delta}} (TNO) thin films as a function of Nb concentration x using photoemission spectroscopy (PES) measurements to elucidate the origin of the abrupt decrease in carrier activation in heavily Nb-doped regime. The existing intensity ratio of Nb{sup 5+} evaluated from Nb 3d core-level PES spectra maintained a constant value of {approx}0.8 at x = 0.06-0.3, implying that electron carriers generated by Nb doping are compensated by p-type defects. Ti 2p-3d and O1s-2p resonant PES measurements of x = 0.06-0.3 films revealed that the in-gap states positioned {approx}1 eV below the Fermi level (E{sub F}) have a mixed character of Ti 3d and O 2p orbitals, whereas the states at E{sub F} mainly have a Ti 3d nature. We proposed a carrier compensation mechanism that interstitial oxygen atoms strongly combined with surrounding Nb atoms kill conduction electrons in heavily Nb-doped anatase TiO{sub 2}.

Defects in heavily phosphorus-doped Si epitaxial films probed by monoenergetic positron beams

International Nuclear Information System (INIS)

Uedono, Akira; Tanigawa, Shoichiro; Suzuki, Ryoichi; Ohgaki, Hideaki; Mikado, Tomohisa.

1994-01-01

Vacancy-type defects in heavily phosphorus-doped Si epitaxial films were probed by monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured for the epitaxial films grown on the Si substrates by plasma chemical vapor deposition. For the as-deposited film, divacancy-phosphorus complexes were found with high concentration. After 600degC annealing, vacancy clusters were formed near the Si/Si interface, while no drastic change in the depth distribution of the divacancy-phosphorus complexes was observed. By 900degC annealing, the vacancy clusters were annealed out; however, the average number of phosphorus atoms coupled with divacancies increased. The relationship between the vacancy-type defects probed by the positron annihilation technique and the carrier concentration was confirmed. (author)

Defects in heavily phosphorus-doped Si epitaxial films probed by monoenergetic positron beams

Energy Technology Data Exchange (ETDEWEB)

Uedono, Akira; Tanigawa, Shoichiro [Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science; Suzuki, Ryoichi; Ohgaki, Hideaki; Mikado, Tomohisa

1994-11-01

Vacancy-type defects in heavily phosphorus-doped Si epitaxial films were probed by monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured for the epitaxial films grown on the Si substrates by plasma chemical vapor deposition. For the as-deposited film, divacancy-phosphorus complexes were found with high concentration. After 600degC annealing, vacancy clusters were formed near the Si/Si interface, while no drastic change in the depth distribution of the divacancy-phosphorus complexes was observed. By 900degC annealing, the vacancy clusters were annealed out; however, the average number of phosphorus atoms coupled with divacancies increased. The relationship between the vacancy-type defects probed by the positron annihilation technique and the carrier concentration was confirmed. (author).

Spin relaxation through lateral spin transport in heavily doped n -type silicon

Science.gov (United States)

Ishikawa, M.; Oka, T.; Fujita, Y.; Sugiyama, H.; Saito, Y.; Hamaya, K.

2017-03-01

We experimentally study temperature-dependent spin relaxation including lateral spin diffusion in heavily doped n -type silicon (n+-Si ) layers by measuring nonlocal magnetoresistance in small-sized CoFe/MgO/Si lateral spin-valve (LSV) devices. Even at room temperature, we observe large spin signals, 50-fold the magnitude of those in previous works on n+-Si . By measuring spin signals in LSVs with various center-to-center distances between contacts, we reliably evaluate the temperature-dependent spin diffusion length (λSi) and spin lifetime (τSi). We find that the temperature dependence of τSi is affected by that of the diffusion constant in the n+-Si layers, meaning that it is important to understand the temperature dependence of the channel mobility. A possible origin of the temperature dependence of τSi is discussed in terms of the recent theories by Dery and co-workers.

Anodic oxidation of wastewater containing the Reactive Orange 16 Dye using heavily boron-doped diamond electrodes

International Nuclear Information System (INIS)

Migliorini, F.L.; Braga, N.A.; Alves, S.A.; Lanza, M.R.V.; Baldan, M.R.; Ferreira, N.G.

2011-01-01

Highlights: → Electrochemical advanced oxidation process was studied using BDD based anodes with different boron concentrations. → The difference between the non-active and active anodes for organics degradation. → The influence of morphologic and structural properties of BDD electrodes on the RO-16 dye degradation. - Abstract: Boron-doped diamond (BDD) films grown on the titanium substrate were used to study the electrochemical degradation of Reactive Orange (RO) 16 Dye. The films were produced by hot filament chemical vapor deposition (HFCVD) technique using two different boron concentrations. The growth parameters were controlled to obtain heavily doped diamond films. They were named as E1 and E2 electrodes, with acceptor concentrations of 4.0 and 8.0 x 10 21 atoms cm -3 , respectively. The boron levels were evaluated from Mott-Schottky plots also corroborated by Raman's spectra, which characterized the film quality as well as its physical property. Scanning Electron Microscopy showed well-defined microcrystalline grain morphologies with crystal orientation mixtures of (1 1 1) and (1 0 0). The electrode efficiencies were studied from the advanced oxidation process (AOP) to degrade electrochemically the Reactive Orange 16 azo-dye (RO16). The results were analyzed by UV/VIS spectroscopy, total organic carbon (TOC) and high-performance liquid chromatography (HPLC) techniques. From UV/VIS spectra the highest doped electrode (E2) showed the best efficiency for both, the aromaticity reduction and the azo group fracture. These tendencies were confirmed by the TOC and chromatographic measurements. Besides, the results showed a direct relationship among the BDD morphology, physical property, and its performance during the degradation process.

Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

International Nuclear Information System (INIS)

Li Xiao-Jing; Zhao De-Gang; Jiang De-Sheng; Chen Ping; Zhu Jian-Jun; Liu Zong-Shun; Yang Jing; He Xiao-Guang; Yang Hui; Zhang Li-Qun; Zhang Shu-Ming; Le Ling-Cong; Liu Jian-Ping

2015-01-01

The influence of a deep-level-defect (DLD) band formed in a heavily Mg-doped GaN contact layer on the performance of Ni/Au contact to p-GaN is investigated. The thin heavily Mg-doped GaN (p ++ -GaN) contact layer with DLD band can effectively improve the performance of Ni/Au ohmic contact to p-GaN. The temperature-dependent I–V measurement shows that the variable-range hopping (VRH) transportation through the DLD band plays a dominant role in the ohmic contact. The thickness and Mg/Ga flow ratio of p ++ -GaN contact layer have a significant effect on ohmic contact by controlling the Mg impurity doping and the formation of a proper DLD band. When the thickness of the p ++ -GaN contact layer is 25 nm thick and the Mg/Ga flow rate ratio is 10.29%, an ohmic contact with low specific contact resistivity of 6.97× 10 −4 Ω·cm 2 is achieved. (paper)

Resonantly-enhanced transmission through a periodic array of subwavelength apertures in heavily-doped conducting polymer films

Science.gov (United States)

Matsui, Tatsunosuke; Vardeny, Z. Valy; Agrawal, Amit; Nahata, Ajay; Menon, Reghu

2006-02-01

We observed resonantly-enhanced terahertz transmission through two-dimensional (2D) periodic arrays of subwavelength apertures with various periodicities fabricated on metallic organic conducting polymer films of polypyrrole heavily doped with PF6 molecules [PPy(PF6)]. The "anomalous transmission" spectra are in good agreement with a model involving surface plasmon polariton excitations on the film surfaces. We also found that the `anomalous transmission' peaks are broader in the exotic metallic PPy (PF6) films compared to those formed in 2D aperture array in regular metallic films such as silver, showing that the surface plasmon polaritons on the PPy (PF6) film surfaces have higher attenuation.

High critical currents in heavily doped (Gd,Y)Ba2Cu3Ox superconductor tapes

Energy Technology Data Exchange (ETDEWEB)

Selvamanickam, V; Gharahcheshmeh, MH; Xu, A; Galstyan, E; Delgado, L; Cantoni, C

2015-01-19

REBa2Cu3Ox ((REBCO), RE = rare earth) superconductor tapes with moderate levels of dopants have been optimized for high critical current density in low magnetic fields at 77 K, but they do not exhibit exemplary performance in conditions of interest for practical applications, i.e., temperatures less than 50K and fields of 2-30 T. Heavy doping of REBCO tapes has been avoided by researchers thus far due to deterioration in properties. Here, we report achievement of critical current densities (J(c)) above 20 MA/cm(2) at 30 K, 3 T in heavily doped (25 mol.% Zr-added) (Gd,Y)Ba2Cu3Ox superconductor tapes, which is more than three times higher than the J(c) typically obtained in moderately doped tapes. Pinning force levels above 1000 GN/m(3) have also been attained at 20 K. A composition map of lift factor in J(c) (ratio of J(c) at 30 K, 3 T to the J(c) at 77 K, 0 T) has been developed which reveals the optimum film composition to obtain lift factors above six, which is thrice the typical value. A highly c-axis aligned BaZrO3 (BZO) nanocolumn defect density of nearly 7 x 10(11) cm(-2) as well as 2-3 nm sized particles rich in Cu and Zr have been found in the high J(c) films. (C) 2015 AIP Publishing LLC.

Effect of Aluminum Doping on the Nanocrystalline ZnS:Al3+ Films Fabricated on Heavily-Doped p-type Si(100) Substrates by Chemical Bath Deposition Method

Science.gov (United States)

Zhu, He-Jie; Liang, Yan; Gao, Xiao-Yong; Guo, Rui-Fang; Ji, Qiang-Min

2015-06-01

Intrinsic ZnS and aluminum-doped nanocrystalline ZnS (ZnS:Al3+) films with zinc-blende structure were fabricated on heavily-doped p-type Si(100) substrates by chemical bath deposition method. Influence of aluminum doping on the microstructure, and photoluminescent and electrical properties of the films, were intensively investigated. The average crystallite size of the films varying in the range of about 9.0 ˜ 35.0 nm initially increases and then decreases with aluminum doping contents, indicating that the crystallization of the films are initially enhanced and then weakened. The incorporation of Al3+ was confirmed from energy dispersive spectrometry and the induced microstrain in the films. Strong and stable visible emission band resulting from the defect-related light emission were observed for the intrinsic ZnS and ZnS:Al3+ films at room temperature. The photoluminescence related to the aluminum can annihilate due to the self-absorption of ZnS:Al3+ when the Al3+ content surpasses certain value. The variation of the resistivity of the films that initially reduces and then increases is mainly caused by the partial substitute for Zn2+ by Al3+ as well as the enhanced crystallization, and by the enhanced crystal boundary scattering, respectively.

Defect formation in heavily doped Si upon irradiation

International Nuclear Information System (INIS)

Gubskaya, V.I.; Kuchinskii, P.V.; Lomako, V.M.

1981-01-01

The rates of the carrier removal and radiation defect introduction into n- and p-Si in the concentration range of 10 14 to 10 17 cm -3 upon 7-MeV-electron irradiation have been studied. The spectrum of the vacancy-type defects, defining the carrier removal rate in lightly doped crystals has been found. With doping level increase the carrier removal rate grows irrespective of conductivity type, and at n 0 , p 0 > 10 17 cm -3 is close to the total displacement number. At the same time a decrease in the introduction rate of the known vacancy-type defects is observed. x It is shown that a considerable growth of the carrier removal rate is defined neither by introduction of shallow compensating centers, nor by change in the primary defect charge state. It is suggested that at high doping impurity concentrations compensation in Si is due to the introduction of complexes doping impurity-interstitial or (impurity atom-interstitial) + vacancy, which give deep levels. (author)

The effect of irradiation temperature on the optical attenuation recovery in heavily Ge-doped single mode silica core fibers

International Nuclear Information System (INIS)

Bertolotti, M.; Mabrouk, M.A.; Ferrari, A.; Serra, A.; Viezzoli, G.

1992-01-01

The behaviour under irradiation of a single mode fiber heavily doped with germanium has been investigated at 0.85 μm and 1.3 μm under different irradiation temperatures in the range from -65degC to 60degC. The time behaviour of the recovery of the induced attenuation has been described using empirical equations, for different temperatures. An nth order kinetics seems appropriate to describe the results and the order of kinetics has been determined at different temperatures. (orig.)

Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors

International Nuclear Information System (INIS)

Zheng Yuzhan; Lu Wu; Ren Diyuan; Wang Yiyuan; Wang Zhikuan; Yang Yonghui

2010-01-01

The characteristics of radiation damage under a high or low dose rate in lateral PNP transistors with a heavily or lightly doped emitter is investigated. Experimental results show that as the total dose increases, the base current of transistors would increase and the current gain decreases. Furthermore, more degradation has been found in lightly-doped PNP transistors, and an abnormal effect is observed in heavily doped transistors. The role of radiation defects, especially the double effects of oxide trapped charge, is discussed in heavily or lightly doped transistors. Finally, through comparison between the high- and low-dose-rate response of the collector current in heavily doped lateral PNP transistors, the abnormal effect can be attributed to the annealing of the oxide trapped charge. The response of the collector current, in heavily doped PNP transistors under high- and low-dose-rate irradiation is described in detail. (semiconductor integrated circuits)

High critical currents in heavily doped (Gd,Y)Ba2Cu3Ox superconductor tapes

International Nuclear Information System (INIS)

Selvamanickam, V.; Gharahcheshmeh, M. Heydari; Xu, A.; Galstyan, E.; Delgado, L.; Cantoni, C.

2015-01-01

REBa 2 Cu 3 O x ((REBCO), RE = rare earth) superconductor tapes with moderate levels of dopants have been optimized for high critical current density in low magnetic fields at 77 K, but they do not exhibit exemplary performance in conditions of interest for practical applications, i.e., temperatures less than 50 K and fields of 2–30 T. Heavy doping of REBCO tapes has been avoided by researchers thus far due to deterioration in properties. Here, we report achievement of critical current densities (J c ) above 20 MA/cm 2 at 30 K, 3 T in heavily doped (25 mol. % Zr-added) (Gd,Y)Ba 2 Cu 3 O x superconductor tapes, which is more than three times higher than the J c typically obtained in moderately doped tapes. Pinning force levels above 1000 GN/m 3 have also been attained at 20 K. A composition map of lift factor in J c (ratio of J c at 30 K, 3 T to the J c at 77 K, 0 T) has been developed which reveals the optimum film composition to obtain lift factors above six, which is thrice the typical value. A highly c-axis aligned BaZrO 3 (BZO) nanocolumn defect density of nearly 7 × 10 11  cm −2 as well as 2–3 nm sized particles rich in Cu and Zr have been found in the high J c films

Conductivity and superconductivity in heavily vacant diamond

Directory of Open Access Journals (Sweden)

S A Jafari

2009-08-01

Full Text Available   Motivated by the idea of impurity band superconductivity in heavily Boron doped diamond, we investigate the doping of various elements into diamond to address the question, which impurity band can offer a better DOS at the Fermi level. Surprisingly, we find that the vacancy does the best job in producing the largest DOS at the Fermi surface. To investigate the effect of disorder in Anderson localization of the resulting impurity band, we use a simple tight-binding model. Our preliminary study based on the kernel polynomial method shows that the impurity band is already localized at the concentration of 10-3. Around the vacancy concentration of 0.006 the whole spectrum of diamond becomes localized and quantum percolation takes place. Therefore to achieve conducting bands at concentrations on the scale of 5-10 percent, one needs to introduce correlations such as hopping among the vacancies .

Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

Energy Technology Data Exchange (ETDEWEB)

Jeong, Ho-young [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of); LG Display R and D Center, 245 Lg-ro, Wollong-myeon, Paju-si, Gyeonggi-do 413-811 (Korea, Republic of); Lee, Bok-young; Lee, Young-jang; Lee, Jung-il; Yang, Myoung-su; Kang, In-byeong [LG Display R and D Center, 245 Lg-ro, Wollong-myeon, Paju-si, Gyeonggi-do 413-811 (Korea, Republic of); Mativenga, Mallory; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of)

2014-01-13

We report thermally stable coplanar amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with heavily doped n{sup +} a-IGZO source/drain regions. Doping is through He plasma treatment in which the resistivity of the a-IGZO decreases from 2.98 Ω cm to 2.79 × 10{sup −3} Ω cm after treatment, and then it increases to 7.92 × 10{sup −2} Ω cm after annealing at 300 °C. From the analysis of X-ray photoelectron spectroscopy, the concentration of oxygen vacancies in He plasma treated n{sup +}a-IGZO does not change much after thermal annealing at 300 °C, indicating thermally stable n{sup +} a-IGZO, even for TFTs with channel length L = 4 μm. Field-effect mobility of the coplanar a-IGZO TFTs with He plasma treatment changes from 10.7 to 9.2 cm{sup 2}/V s after annealing at 300 °C, but the performance of the a-IGZO TFT with Ar or H{sub 2} plasma treatment degrades significantly after 300 °C annealing.

Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

International Nuclear Information System (INIS)

Jeong, Ho-young; Lee, Bok-young; Lee, Young-jang; Lee, Jung-il; Yang, Myoung-su; Kang, In-byeong; Mativenga, Mallory; Jang, Jin

2014-01-01

We report thermally stable coplanar amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with heavily doped n + a-IGZO source/drain regions. Doping is through He plasma treatment in which the resistivity of the a-IGZO decreases from 2.98 Ω cm to 2.79 × 10 −3 Ω cm after treatment, and then it increases to 7.92 × 10 −2 Ω cm after annealing at 300 °C. From the analysis of X-ray photoelectron spectroscopy, the concentration of oxygen vacancies in He plasma treated n + a-IGZO does not change much after thermal annealing at 300 °C, indicating thermally stable n + a-IGZO, even for TFTs with channel length L = 4 μm. Field-effect mobility of the coplanar a-IGZO TFTs with He plasma treatment changes from 10.7 to 9.2 cm 2 /V s after annealing at 300 °C, but the performance of the a-IGZO TFT with Ar or H 2 plasma treatment degrades significantly after 300 °C annealing

Path-integral calculation of the density of states in heavily doped strongly compensated semiconductors in a magnetic field

International Nuclear Information System (INIS)

Koinov, Z.G.; Yanchev, I.Y.

1981-09-01

The density of states in heavily doped strongly compansated semiconductors in a strong magnetic field is calculated by using the path-integral method. The case is considered when correlation exists in the impurity positions owing to the Coulomb interactions between the charged donors and acceptors during the high-temperature preparation of the samples. The semiclassical formula is rederived and corrections to it due to the long-range character of the potential and its short-range fluctuations are obtained. The density of states in the tail is studied and analytical results are given in the classical and quantum cases. (author)

Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source

Energy Technology Data Exchange (ETDEWEB)

Daniltsev, V. M.; Demidov, E. V.; Drozdov, M. N.; Drozdov, Yu. N., E-mail: drozdyu@ipmras.ru; Kraev, S. A.; Surovegina, E. A.; Shashkin, V. I.; Yunin, P. A. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2016-11-15

The capabilities of GaAs epitaxial layers extremely heavily doped with tellurium by metal-organic vapor-phase epitaxy using diisopropyl telluride as a source are studied. It is shown that tellurium incorporation into GaAs occurs to an atomic concentration of 10{sup 21} cm{sup –3} without appreciable diffusion and segregation effects. Good carrier concentrations (2 × 10{sup 19} cm{sup –3}) and specific contact resistances of non-alloyed ohmic contacts (1.7 × 10{sup –6} Ω cm{sup 2}) give grounds to use such layers to create non-alloyed ohmic contacts in electronic devices. A sharp decrease in the electrical activity of Te atoms, a decrease in the electron mobility, and an increase in the contact resistance at atomic concentrations above 2 × 10{sup 20} cm{sup –3} are detected.

Thermal oxidation effect on structural and optical properties of heavily doped phosphorus polycrystalline silicon films

Energy Technology Data Exchange (ETDEWEB)

Birouk, B.; Madi, D. [Universite de Jijel, Laboratoire d' Etudes et de Modelisation en Electrotechnique (LAMEL), Cite Ouled Aissa, BP 98, Jijel (Algeria)

2011-08-15

The study reported in this paper contributes to better understanding the thermal oxidation effect on structural and optical properties of polycrystalline silicon heavily in situ P-LPCVD films. The deposits, doped at levels 3 x 10{sup 19} and 1.6 x 10{sup 20} cm{sup -3}, have been elaborated from silane decomposition (400 mTorrs, 605 C) on monosilicon substrate oriented left angle 111 right angle. The thermal oxidation was performed at temperatures: 850 C during 1 hour, 1000, 1050, and 1100 C during 15 minutes. The XRD spectra analysis pointed out significant left angle 111 right angle texture evolution, while in the case of left angle 220 right angle and left angle 311 right angle textures, the intensities are practically invariant (variations fall in the uncertainty intervals). The optical characterizations showed that refractive index and absorption coefficient are very sensitive to the oxidation treatment, mainly when the doping level is not very high. We think that atomic oxygen acts as defects passivating agent leading to carriers' concentration increasing. Besides, the optical behavior is modeled in visible and near infrared, by a seven-term polynomial function n {sup 2}=f({lambda} {sup 2}), with alternate signs, instead of theoretically unlimited terms number from Drude's model. It has been shown that fitting parameters fall on Gaussian curves like they do in the theoretical model. (orig.)

High reliability EPI-base radiation hardened power transistor

International Nuclear Information System (INIS)

Clark, L.E.; Saltich, J.L.

1978-01-01

A high-voltage power transistor is described which is able to withstand fluences as high as 3 x 10 14 neutrons per square centimeter and still be able to operate satisfactorily. The collector may be made essentially half as thick and twice as heavily doped as normally and its base is made in two regions which together are essentially four times as thick as the normal power transistor base region. The base region has a heavily doped upper region and a lower region intermediate the upper heavily doped region and the collector. The doping in the intermediate region is as close to intrinsic as possible, in any event less than about 3 x 10 15 impurities per cubic centimeter. The second base region has small width in comparison to the first base region, the ratio of the first to the second being at least about 5 to 1. The base region having the upper heavily doped region and the intermediate or lower low doped region contributes to the higher breakdown voltage which the transistor is able to withstand. The high doping of the collector region essentially lowers that portion of the breakdown voltage achieved by the collector region. Accordingly, it is necessary to transfer certain of this breakdown capability to the base region and this is achieved by using the upper region of heavily doped and an intermediate or lower region of low doping

Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability

CERN Document Server

Pereira, LMC; Correia, JG; Decoster, S; da Silva, MR; Araújo, JP; Vantomme, A

2011-01-01

We report on the lattice location of Mn in heavily p-type doped GaAs by means of $\\beta^{-}$-emission channeling from the decay of $^{56}$Mn. The majority of the Mn atoms substitute for Ga and up to 31% occupy the tetrahedral interstitial site with As nearest neighbors. Contrary to the general belief, we find that interstitial Mn is immobile up to 400$^{\\circ}$C, with an activation energy for diffusion of 1.7–2.3 eV. Such high thermal stability of interstitial Mn has significant implications on the strategies and prospects for achieving room temperature ferromagnetism in Ga$_{1−x}$Mn$_{x}$As.

Electron transport in heavily doped GdN

Science.gov (United States)

Maity, T.; Trodahl, H. J.; Natali, F.; Ruck, B. J.; Vézian, S.

2018-01-01

We report measurements of electron transport phenomena in the intrinsic ferromagnetic semiconductor GdN doped with 1.3 ×1021cm-3 electrons. The conductivity, carrier concentration, and thermoelectric power are compared with expectations based on an LSDA+U band structure. In the ferromagnetic state the carriers fill the majority-spin conduction band pockets to the bottom of the minority-spin band. The resistance implies an electron mobility of 18 cm2V-1s-1 at zero temperature, and in turn a mean-free path of 10-30 nm. Spin disorder scattering rapidly reduces the mobility near the 70 K Curie temperature (TC). The thermoelectric power is negative in the paramagnetic phase, as expected for a n -type conductor, with a magnitude that is in agreement with the Fermi energy implied by the band structure. The thermopower reverses sign to be positive in the ferromagnetic phase, which correlates with a strongly temperature-dependent electron diffusion from spin-disorder scattering that increases rapidly as the temperature rises toward TC.

Toward deep blue nano hope diamonds: heavily boron-doped diamond nanoparticles.

Science.gov (United States)

Heyer, Steffen; Janssen, Wiebke; Turner, Stuart; Lu, Ying-Gang; Yeap, Weng Siang; Verbeeck, Jo; Haenen, Ken; Krueger, Anke

2014-06-24

The production of boron-doped diamond nanoparticles enables the application of this material for a broad range of fields, such as electrochemistry, thermal management, and fundamental superconductivity research. Here we present the production of highly boron-doped diamond nanoparticles using boron-doped CVD diamond films as a starting material. In a multistep milling process followed by purification and surface oxidation we obtained diamond nanoparticles of 10-60 nm with a boron content of approximately 2.3 × 10(21) cm(-3). Aberration-corrected HRTEM reveals the presence of defects within individual diamond grains, as well as a very thin nondiamond carbon layer at the particle surface. The boron K-edge electron energy-loss near-edge fine structure demonstrates that the B atoms are tetrahedrally embedded into the diamond lattice. The boron-doped diamond nanoparticles have been used to nucleate growth of a boron-doped diamond film by CVD that does not contain an insulating seeding layer.

Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

International Nuclear Information System (INIS)

Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang; Yang, Deren; Lu, Yunhao

2014-01-01

The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B 2 I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition

Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

Energy Technology Data Exchange (ETDEWEB)

Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn; Yang, Deren [State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Lu, Yunhao, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn [International Center for New-Structured Materials and Laboratory of New-Structured Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

2014-01-20

The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B{sub 2}I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition.

Tuning electronic properties of In2O3 nanowires by doping control

International Nuclear Information System (INIS)

Lei, B.; Li, C.; Zhang, D.; Tang, D.; Zhou, C.

2004-01-01

We present two effective routes to tune the electronic properties of single-crystalline In 2 O 3 nanowires by controlling the doping. The first method involves using different O 2 concentrations during the synthesis. Lightly (heavily) doped nanowires were produced by using high (low) O 2 concentrations, respectively, as revealed by the conductances and threshold voltages of nanowire-based field-effect transistors. Our second method exploits post-synthesis baking, as baking heavily doped nanowires in ambient air led to suppressed conduction and a positive shift of the threshold voltage, whereas baking lightly doped nanowires in vacuum displayed the opposite behavior. Our approaches offer viable ways to tune the electronic properties of many nonstoichiometric metal oxide systems such as In 2 O 3 , SnO 2 , and ZnO nanowires for various applications

Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

Energy Technology Data Exchange (ETDEWEB)

Achatz, Philipp

2009-05-15

During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n{sub c} for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers ({approx} 500 cm{sup -1}) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g{sub c}. The granularity also influences significantly the superconducting properties by introducing the superconducting gap {delta} in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the

Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

International Nuclear Information System (INIS)

Achatz, Philipp

2009-01-01

During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n c for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers (∼ 500 cm -1 ) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g c . The granularity also influences significantly the superconducting properties by introducing the superconducting gap Δ in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the first time in aluminum-doped

Estimation of free carrier concentrations in high-quality heavily doped GaN:Si micro-rods by photoluminescence and Raman spectroscopy

Science.gov (United States)

Mohajerani, M. S.; Khachadorian, S.; Nenstiel, C.; Schimpke, T.; Avramescu, A.; Strassburg, M.; Hoffmann, A.; Waag, A.

2016-03-01

The controlled growth of highly n-doped GaN micro rods is one of the major challenges in the fabrication of recently developed three-dimensional (3D) core-shell light emitting diodes (LEDs). In such structures with a large active area, higher electrical conductivity is needed to achieve higher current density. In this contribution, we introduce high quality heavily-doped GaN:Si micro-rods which are key elements of the newly developed 3D core-shell LEDs. These structures were grown by metal-organic vapor phase epitaxy (MOVPE) using selective area growth (SAG). We employed spatially resolved micro-Raman and micro-photoluminescence (PL) in order to directly determine a free-carrier concentration profile in individual GaN micro-rods. By Raman spectroscopy, we analyze the low-frequency branch of the longitudinal optical (LO)-phonon-plasmon coupled modes and estimate free carrier concentrations from ≍ 2.4 × 1019 cm-3 up to ≍ 1.5 × 1020 cm-3. Furthermore, free carrier concentrations are determined by estimating Fermi energy level from the near band edge emission measured by low-temperature PL. The results from both methods reveal a good consistency.

High critical currents in heavily doped (Gd,Y)Ba{sub 2}Cu{sub 3}O{sub x} superconductor tapes

Energy Technology Data Exchange (ETDEWEB)

Selvamanickam, V., E-mail: selva@uh.edu; Gharahcheshmeh, M. Heydari; Xu, A.; Galstyan, E.; Delgado, L. [Department of Mechanical Engineering and Texas Center for Superconductivity, University of Houston, 4800 Calhoun Rd., Houston, Texas 77204-4006 (United States); Cantoni, C. [Oak Ridge National Laboratory, Oak Ridge, Tennessee 37381 (United States)

2015-01-19

REBa{sub 2}Cu{sub 3}O{sub x} ((REBCO), RE = rare earth) superconductor tapes with moderate levels of dopants have been optimized for high critical current density in low magnetic fields at 77 K, but they do not exhibit exemplary performance in conditions of interest for practical applications, i.e., temperatures less than 50 K and fields of 2–30 T. Heavy doping of REBCO tapes has been avoided by researchers thus far due to deterioration in properties. Here, we report achievement of critical current densities (J{sub c}) above 20 MA/cm{sup 2} at 30 K, 3 T in heavily doped (25 mol. % Zr-added) (Gd,Y)Ba{sub 2}Cu{sub 3}O{sub x} superconductor tapes, which is more than three times higher than the J{sub c} typically obtained in moderately doped tapes. Pinning force levels above 1000 GN/m{sup 3} have also been attained at 20 K. A composition map of lift factor in J{sub c} (ratio of J{sub c} at 30 K, 3 T to the J{sub c} at 77 K, 0 T) has been developed which reveals the optimum film composition to obtain lift factors above six, which is thrice the typical value. A highly c-axis aligned BaZrO{sub 3} (BZO) nanocolumn defect density of nearly 7 × 10{sup 11 }cm{sup −2} as well as 2–3 nm sized particles rich in Cu and Zr have been found in the high J{sub c} films.

Surface plasmon enhanced SWIR absorption at the ultra n-doped substrate/PbSe nanostructure layer interface

Science.gov (United States)

Wittenberg, Vladimir; Rosenblit, Michael; Sarusi, Gabby

2017-08-01

This work presents simulation results of the plasmon enhanced absorption that can be achieved in the short wavelength infrared (SWIR - 1200 nm to 1800 nm) spectral range at the interface between ultra-heavily doped substrates and a PbSe nanostructure non-epitaxial growth absorbing layer. The absorption enhancement simulated in this study is due to surface plasmon polariton (SPP) excitation at the interface between these ultra-heavily n-doped GaAs or GaN substrates, which are nearly semimetals to SWIR light, and an absorption layer made of PbSe nano-spheres or nano-columns. The ultra-heavily doped GaAs or GaN substrates are simulated as examples, based on the Drude-Lorentz permittivity model. In the simulation, the substrates and the absorption layer were patterned jointly to forma blazed lattice, and then were back-illuminated using SWIR with a central wavelength of 1500 nm. The maximal field enhancement achieved was 17.4 with a penetration depth of 40 nm. Thus, such architecture of an ultra-heavily doped semiconductor and infrared absorbing layer can further increase the absorption due to the plasmonic enhanced absorption effect in the SWIR spectral band without the need to use a metallic layer as in the case of visible light.

Surface modification by vacuum annealing for field emission from heavily phosphorus-doped homoepitaxial (1 1 1) diamond

International Nuclear Information System (INIS)

Yamada, Takatoshi; Nebel, Christoph E.; Somu, Kumaragurubaran; Shikata, Shin-ichi

2008-01-01

The relationship between field emission properties and C 1s core level shifts of heavily phosphorus-doped homoepitaxial (1 1 1) diamond is investigated as a function of annealing temperature in order to optimize surface carbon bonding configurations for device applications. A low field emission threshold voltage is observed from surfaces annealed at 800 deg. C for hydrogen-plasma treated surface, while a low field emission threshold voltage of wet-chemical oxidized surface is observed after annealing at 900 deg. C. The C 1s core level by X-ray photoelectron spectroscopy (XPS) showed a shoulder peak at 1 eV below the main peak over 800 and 900 deg. C annealing temperature for hydrogen-plasma treated and wet-chemical oxidized surfaces, respectively. When the shoulder peak intensity is less than 10% of the main peak intensity, lower threshold voltages are observed. This is due to the carbon-reconstruction which gives rise to a small positive electron affinity. By increasing annealing temperature, the shoulder peak ratios also increase, which indicates that a surface graphitization takes place. This leads to higher threshold voltages

Electronic transport in heavily doped Ag/n-Si composite films

Directory of Open Access Journals (Sweden)

Clayton W. Bates Jr.

2013-10-01

Full Text Available Hall measurements characterized Ag/n-Si composite films 1 micron thick produced by magnetron co-sputtering onto high resistivity Si (111 substrates at 550°C. The targets were Ag and n-type Si doped with 3 × 1019/cm3 of antimony. Films were prepared with 13, 16 and 22 at. % Ag and measured over a temperature range 77–500°K. Conduction takes place at low temperatures by variable rang hopping in localized states at the Fermi level and by thermal activation over grain boundaries at higher temperatures. The Log Resistivity vs 1/kT curves for the three Ag concentrations vary in a similar manner, but decrease in magnitude with increasing Ag due to the smaller number of grain boundaries between Ag nanoparticles occurring with increasing Ag concentration. At low temperatures Hall mobilities are essentially independent of temperature as the carrier densities for the three Ag concentrations are constant from 77 to slightly under 300°K with resistivities varying by small amounts. The mobilities at all Ag concentrations increase with temperature and approach each other as the effects of grain boundaries become less important. This work presents for the first time the effects of metal particles embedded in a semiconductor on the transport properties of carriers in the semiconductor. Though these effects are for a given average particle size most of the results are expected to hold over a range of particle sizes. Free electrons produced in films containing 13 and 16 at. % Ag result in concentrations of 1.5 × 1019/cm3, one half the antimony doping, while those with 22 at. % Ag, the carrier concentrations are three orders of magnitude higher. These constant carrier concentrations are due to the metal-insulator transition that occurs in doped crystalline and polycrystalline silicon for carrier densities nc >3.9 × 1018/cm3. The three orders of magnitude higher carrier concentration produced in films with 22 at. % Ag is argued to be due to doping of the Si

Cathodoluminescence studies of anomalous ion implantation defect introduction in lightly and heavily doped liquid phase epitaxial GaAs:Sn

International Nuclear Information System (INIS)

Norris, C.B.; Barnes, C.E.

1980-01-01

The anomalous postrange defect introduction produced by shallow ion implantation in GaAs has been investigated in Sn-doped liquid phase epitaxial (LPE) material using depth-resolved cathodoluminescence in conjunction with layer removal by chemical etching. 100-keV Ne + or 200-keV Zn + ions were implanted into lightly or heavily Sn-doped LPE layers at temperatures between 80 and 300 K. All implantations were subsequently annealed at 300 K. Although the projected ion ranges for the implants were on the order of 1000 A, significant postrange damage was observed at far greater depths. At depths up to several microns, the damage introduction produced severe nonradiative recombination but simultaneously caused an apparent increase in the concentration of incumbent luminescence centers responsible for an extrinsic band near 1.39 eV. A weak damage-related band near 1.2 eV could also be seen in one instance. At depths of 5--30 μm, the postrange damage had the opposite effect of annihilating incumbent 1.39-eV luminescence centers. The efficiency of the damage introduction has a complicated temperature dependence which is significantly different for the ion/substrate combinations investigated. However, no conditions were found for which the damage introduction could be inhibited. While our measurements are the most extensive to date concerning the anomalous ion implant damage introduction in GaAs, the detailed mechanisms responsible for this effect still remain obscure owing in part to the limited understanding of defects in GaAs

Inhomogeneous electronic structures in heavily Pb-doped Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub y} single crystals probed by low temperature STM/STS

Energy Technology Data Exchange (ETDEWEB)

Kinoda, Go; Nakao, Shoichiro; Motohashi, Teruki; Nakayama, Yuri; Shimizu, Keisuke; Shimoyama, Junichi; Kishio, Koji; Hanaguri, Tetsuo; Kitazawa, Koichi; Hasegawa, Tetsuya

2003-05-15

We have performed cryogenic scanning tunneling microscopy/spectroscopy (STM/STS) of heavily Pb-doped Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub y} single crystals to investigate local electronic structures in the overdoped regime. The obtained STM/STS results at 4.3 K clearly showed local inhomogeneity of gap structure {delta} ({delta}=20-60 meV) in a scale of several nm, suggesting the coexistence of superconducting and pseudogap-like regions, even in the overdoped regime.

Rapid enhancement of nodal quasiparticle mass with heavily underdoping in Bi2212

Science.gov (United States)

Anzai, Hiroaki; Arita, Masashi; Namatame, Hirofumi; Taniguchi, Masaki; Ishikado, Motoyuki; Fujita, Kazuhiro; Ishida, Shigeyuki; Uchida, Shin-ichi; Ino, Akihiro

2018-05-01

We report substantial advance of our low-energy angle-resolved photoemission study of nodal quasiparticles in Bi2Sr2CaCu2O8+δ. The new data cover the samples from underdoped down to heavily underdoped levels. We also present the nodal Fermi velocities that determined by using an excitation-photon energy of hν = 7.0 eV over a wide doping range. The consistency between the results with hν = 8.1 and 7.0 eV allows us to rule out the effect of photoemission matrix elements. In comparison with the data previously reported, the nodal effective mass increases by a factor of ∼ 1.5 in going from optimally doped to heavily underdoped levels. We find a rapid enhancement of the nodal quasiparticle mass at low doping levels near the superconductor-to-insulator transition. The effective coupling spectrum, λ (ω) , is extracted directly from the energy derivatives of the quasiparticle dispersion and scattering rate, as a causal function of the mass enhancement factor. A steplike increase in Reλ (ω) around ∼ 65 meV is demonstrated clearly by the Kramers-Kronig transform of Imλ (ω) . To extract the low-energy renormalization effect, we calculated a simple model for the electron-boson interaction. This model reveals that the contribution of the renormalization at | ω | ≤ 15 meV to the quasiparticle mass is larger than that around 65 meV in underdoped samples.

Surface photovoltage in heavily doped GaN:Si,Zn

Science.gov (United States)

McNamara, J. D.; Behrends, A.; Mohajerani, M. S.; Bakin, A.; Waag, A.; Baski, A. A.; Reshchikov, M. A.

2014-02-01

In n-type GaN, an upward band bending of about 1 eV is caused by negative charge at the surface. UV light reduces the band bending by creating a surface photovoltage (SPV), which can be measured by a Kelvin probe. Previously, we reported a fast SPV signal of about 0.6 eV in undoped and moderately doped GaN. In this work, we have studied degenerate GaN co-doped with Zn and Si, with a Si concentration of about 1019 cm-3 and a Zn concentration of 6×1017 cm-3. At room temperature, a fast component of about 0.6 eV was observed. However, after preheating the sample at 600 K for one hour and subsequently cooling the sample to 300 K (all steps performed in vacuum), the fast component disappeared. Instead, a very slow (minutes) and logarithmic in time rise of the SPV was observed with UV illumination. The total change in SPV was about 0.4 eV. This slow SPV transient can be reversibly converted into the "normal" fast (subsecond) rise by letting air or dry oxygen in at room temperature. Possible explanations of the observed unusual SPV transients are discussed.

Continuous growth of low-temperature Si epitaxial layer with heavy phosphorous and boron doping using photoepitaxy

International Nuclear Information System (INIS)

Yamazaki, T.; Minakata, H.; Ito, T.

1990-01-01

The authors grew p + -n + silicon epitaxial layers, heavily doped with phosphorus and boron, continuously at 650 degrees C using low-temperature photoepitaxy. Then N + photoepitaxial layer with a phosphorus concentration above 10 17 cm -3 grown on p - substrate shows high-density surface pits, and as a result, poor crystal quality. However, when this n + photoepitaxial layer is grown continuously on a heavily boron-doped p + photoepitaxial layer, these surface pits are drastically decreased, disappearing completely above a hole concentration of 10 19 cm -3 in the p + photoepitaxial layer. The phosphorus activation ratio and electron Hall mobility in the heavily phosphorus-doped n + photoexpitaxial layer were also greatly improved. The authors investigated the cause of the surface pitting using a scanning transmission electron microscope, secondary ion mass spectroscopy, and energy-dispersive x-ray spectroscopy. They characterized the precipitation of phosphorus atoms on the crystal surface at the initial stage of the heavily phosphorus-doped n + photoexpitaxial layer growth

Contribution to the study, by magnetic resonance, of the properties of heavily doped silicon at low temperature

International Nuclear Information System (INIS)

Jerome, D.

1965-10-01

The magnetic properties of heavily doped silicon at low temperature have been studied in a range of concentration on either side of the Mott transition. For impurity densities less than that of the transition a magnetic double resonance method allows the exchange coupling between localized donors to be measured, and in addition the existence of paramagnetic centers (pairs of neutral and ionized donors) is demonstrated. The behaviour of the spin-lattice relaxation of 29 Ci is explained in terms of the dipolar coupling between nuclei and paramagnetic centers. In the range of concentration 10 16 -10 17 impurities/cm 3 , the concentration dependent relaxation of donors is studied experimentally. A theoretical explanation is proposed for the latter mechanism, the basis of which is the presence of ionized pairs of donors. At increasing impurity concentrations the electronic delocalization increases. For the concentration of 2.5 X 10 18 P/cm 3 the hyperfine coupling is responsible for the 29 Si relaxation. It is shown that the electron density has a very large maximum near the impurities in the metallic domain of concentrations. An estimation of the impurity band width (19 deg. K) is deduced from the measurement of the paramagnetic part of the electronic susceptibility at low temperature. (author) [fr

Thermal equilibrium concentration of intrinsic point defects in heavily doped silicon crystals - Theoretical study of formation energy and formation entropy in area of influence of dopant atoms-

Science.gov (United States)

Kobayashi, K.; Yamaoka, S.; Sueoka, K.; Vanhellemont, J.

2017-09-01

It is well known that p-type, neutral and n-type dopants affect the intrinsic point defect (vacancy V and self-interstitial I) behavior in single crystal Si. By the interaction with V and/or I, (1) growing Si crystals become more V- or I-rich, (2) oxygen precipitation is enhanced or retarded, and (3) dopant diffusion is enhanced or retarded, depending on the type and concentration of dopant atoms. Since these interactions affect a wide range of Si properties ranging from as-grown crystal quality to LSI performance, numerical simulations are used to predict and to control the behavior of both dopant atoms and intrinsic point defects. In most cases, the thermal equilibrium concentrations of dopant-point defect pairs are evaluated using the mass action law by taking only the binding energy of closest pair to each other into account. The impacts of dopant atoms on the formation of V and I more distant than 1st neighbor and on the change of formation entropy are usually neglected. In this study, we have evaluated the thermal equilibrium concentrations of intrinsic point defects in heavily doped Si crystals. Density functional theory (DFT) calculations were performed to obtain the formation energy (Ef) of the uncharged V and I at all sites in a 64-atom supercell around a substitutional p-type (B, Ga, In, and Tl), neutral (C, Ge, and Sn) and n-type (P, As, and Sb) dopant atom. The formation (vibration) entropies (Sf) of free I, V and I, V at 1st neighboring site from B, C, Sn, P and As atoms were also calculated with the linear response method. The dependences of the thermal equilibrium concentrations of trapped and total intrinsic point defects (sum of free I or V and I or V trapped with dopant atoms) on the concentrations of B, C, Sn, P and As in Si were obtained. Furthermore, the present evaluations well explain the experimental results of the so-called ;Voronkov criterion; in B and C doped Si, and also the observed dopant dependent void sizes in P and As doped Si

Simulation of Heavily Irradiated Silicon Pixel Sensors and Comparison with Test Beam Measurements

CERN Document Server

Chiochia, Vincenzo; Bortoletto, Daniela; Cremaldi, Lucien; Cucciarelli, Susanna; Dorokhov, Andrei; Hoermann, Christoph; Kim, Dongwook; Konecki, Marcin; Kotlinski, Danek; Prokofiev, Kirill; Regenfus, Christian; Rohe, Tilman; Sanders, David A.; Son, Seunghee; Speer, Thomas; Chiochia, Vincenzo; Swartz, Morris; Bortoletto, Daniela; Cremaldi, Lucien; Cucciarelli, Susanna; Dorokhov, Andrei; Hoermann, Christoph; Kim, Dongwook; Konecki, Marcin; Kotlinski, Danek; Prokofiev, Kirill; Regenfus, Christian; Rohe, Tilman; Sanders, David A.; Son, Seunghee; Speer, Thomas

2004-01-01

Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective doping density is inconsistent with the data. A two-trap double junction model implemented in the ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of charge trapping observed in the data.

Thermal diffusion boron doping of single-crystal natural diamond

Energy Technology Data Exchange (ETDEWEB)

Seo, Jung-Hun; Mikael, Solomon; Mi, Hongyi; Venkataramanan, Giri; Ma, Zhenqiang, E-mail: mazq@engr.wisc.edu [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Wu, Henry; Morgan, Dane [Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Blanchard, James P. [Department of Nuclear Engineering and Engineering Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Zhou, Weidong [Department of Electrical Engineering, NanoFAB Center, University of Texas at Arlington, Arlington, Texas 76019 (United States); Gong, Shaoqin [Department of Biomedical Engineering and Wisconsin Institute for Discovery, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

2016-05-28

With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

Thermal diffusion boron doping of single-crystal natural diamond

International Nuclear Information System (INIS)

Seo, Jung-Hun; Mikael, Solomon; Mi, Hongyi; Venkataramanan, Giri; Ma, Zhenqiang; Wu, Henry; Morgan, Dane; Blanchard, James P.; Zhou, Weidong; Gong, Shaoqin

2016-01-01

With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

Heavy doping effects in high efficiency silicon solar cells

Science.gov (United States)

Lindholm, F. A.; Neugroschel, A.

1986-01-01

The temperature dependence of the emitter saturation current for bipolar devices was studied by varying the surface recombination velocity at the emitter surface. From this dependence, the value was derived for bandgap narrowing that is in better agreement with other determinations that were obtained from the temperature dependence measure on devices with ohmic contacts. Results of the first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer were reported. The value was obtained by a high-frequency conductance method recently developed and used for doped Si. Experimental evidence is presented for significantly greater charge storage in highly excited silicon near room temperature than conventional theory would predict. These data are compared with various data for delta E sub G in heavily doped silicon.

Spectroscopic XPEEM of highly conductive SI-doped GaN wires

Energy Technology Data Exchange (ETDEWEB)

Renault, O., E-mail: olivier.renault@cea.fr [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Morin, J. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Tchoulfian, P. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); CNRS, Inst. NEEL, F-38042 Grenoble (France); Chevalier, N. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Feyer, V. [Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Center Jülich, D-52425 Jülich (Germany); Pernot, J. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CNRS, Inst. NEEL, F-38042 Grenoble (France); Institut Universitaire de France, F-75005 Paris (France); Schneider, C.M. [Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Center Jülich, D-52425 Jülich (Germany)

2015-12-15

Using soft X-ray photoelectron emission microscopy (XPEEM), complemented by scanning Auger microscopy (SAM) and scanning capacitance microscopy, we have quantitatively studied the incorporation of silicon and band bending at the surface (m-facet) of an individual, highly conductive Si-doped GaN micro-wires (Tchoulfian et al., Applied Physics Letters 102 (12), 2013). Electrically active n-dopants Si atoms in Ga interstitial sites are detected as nitride bonding states in the high-resolution Si2p core level spectra, and represent only a small fraction (<10%) of the overall Si surface concentration measured by SAM. The derived carrier concentration of 2×10{sup 21} at cm{sup −3} is in reasonable agreement with electrical measurements. A consistent surface band bending of ~1 eV is directly evidenced by surface photo-voltage measurements. Such an approach combining different surface-sensitive microscopies is of interest for studying other heavily doped semiconducting wires. - Highlights: • XPEEM analysis of state-of-the-art, heavily doped GaN wires with insights on the issue of the origin of the increased conductivity. • Combined microscopic approach with Scanning Auger microscopy and X-ray Photoeletron Emission Microscopy, to quantity the electrically active Si-dopants in GaN. • The determined concentration is found in reasonable agreement with the one derived from bulk electrical measurements. • The proposed method is of interest for studying the electronics and chemistry of doping in other heavily doped semiconducting wires.

Faraday rotation and photoluminescence in heavily Tb(3+)-doped GeO2-B2O3-Al2O3-Ga2O3 glasses for fiber-integrated magneto-optics.

Science.gov (United States)

Gao, Guojun; Winterstein-Beckmann, Anja; Surzhenko, Oleksii; Dubs, Carsten; Dellith, Jan; Schmidt, Markus A; Wondraczek, Lothar

2015-03-10

We report on the magneto-optical (MO) properties of heavily Tb(3+)-doped GeO2-B2O3-Al2O3-Ga2O3 glasses towards fiber-integrated paramagnetic MO devices. For a Tb(3+) ion concentration of up to 9.7 × 10(21) cm(-3), the reported glass exhibits an absolute negative Faraday rotation of ~120 rad/T/m at 632.8 nm. The optimum spectral ratio between Verdet constant and light transmittance over the spectral window of 400-1500 nm is found for a Tb(3+) concentration of ~6.5 × 10(21) cm(-3). For this glass, the crystallization stability, expressed as the difference between glass transition temperature and onset temperature of melt crystallization exceeds 100 K, which is a prerequisite for fiber drawing. In addition, a high activation energy of crystallization is achieved at this composition. Optical absorption occurs in the NUV and blue spectral region, accompanied by Tb(3+) photoluminescence. In the heavily doped materials, a UV/blue-to-green photo-conversion gain of ~43% is achieved. The lifetime of photoluminescence is ~2.2 ms at a stimulated emission cross-section σem of ~1.1 × 10(-21) cm(2) for ~ 5.0 × 10(21) cm(-3) Tb(3+). This results in an optical gain parameter σem*τ of ~2.5 × 10(-24) cm(2)s, what could be of interest for implementation of a Tb(3+) fiber laser.

Faraday rotation and photoluminescence in heavily Tb3+-doped GeO2-B2O3-Al2O3-Ga2O3 glasses for fiber-integrated magneto-optics

Science.gov (United States)

Gao, Guojun; Winterstein-Beckmann, Anja; Surzhenko, Oleksii; Dubs, Carsten; Dellith, Jan; Schmidt, Markus A.; Wondraczek, Lothar

2015-01-01

We report on the magneto-optical (MO) properties of heavily Tb3+-doped GeO2-B2O3-Al2O3-Ga2O3 glasses towards fiber-integrated paramagnetic MO devices. For a Tb3+ ion concentration of up to 9.7 × 1021 cm−3, the reported glass exhibits an absolute negative Faraday rotation of ~120 rad/T/m at 632.8 nm. The optimum spectral ratio between Verdet constant and light transmittance over the spectral window of 400–1500 nm is found for a Tb3+ concentration of ~6.5 × 1021 cm−3. For this glass, the crystallization stability, expressed as the difference between glass transition temperature and onset temperature of melt crystallization exceeds 100 K, which is a prerequisite for fiber drawing. In addition, a high activation energy of crystallization is achieved at this composition. Optical absorption occurs in the NUV and blue spectral region, accompanied by Tb3+ photoluminescence. In the heavily doped materials, a UV/blue-to-green photo-conversion gain of ~43% is achieved. The lifetime of photoluminescence is ~2.2 ms at a stimulated emission cross-section σem of ~1.1 × 10−21 cm2 for ~ 5.0 × 1021 cm−3 Tb3+. This results in an optical gain parameter σem*τ of ~2.5 × 10−24 cm2s, what could be of interest for implementation of a Tb3+ fiber laser. PMID:25754819

Effect of 60Co γ-irradiation on the nature of electronic transport in heavily doped n-type GaN based Schottky photodetectors

Science.gov (United States)

Chatterjee, Abhishek; Khamari, Shailesh K.; Porwal, S.; Kher, S.; Sharma, T. K.

2018-04-01

GaN Schottky photodetectors are fabricated on heavily doped n-type GaN epitaxial layers grown by the hydride vapour phase epitaxy technique. The effect of 60Co γ-radiation on the electronic transport in GaN epilayers and Schottky detectors is studied. In contrast to earlier observations, a steady rise in the carrier concentration with increasing irradiation dose is clearly seen. By considering a two layer model, the contribution of interfacial dislocations in carrier transport is isolated from that of the bulk layer for both the pristine and irradiated samples. The bulk carrier concentration is fitted by using the charge balance equation which indicates that no new electrically active defects are generated by γ-radiation even at 500 kGy dose. The irradiation induced rise in the bulk carrier concentration is attributed to the activation of native Si impurities that are already present in an electrically inert form in the pristine sample. Further, the rise in interfacial contribution in the carrier concentration is governed by the enhanced rate of formation of nitrogen vacancies by irradiation, which leads to a larger diffusion of oxygen impurities. A large value of the characteristic tunnelling energy for both the pristine and irradiated Au/Ni/GaN Schottky devices confirms that the dislocation-assisted tunnelling dominates the low temperature current transport even after irradiation. The advantage of higher displacement energy and larger bandgap of GaN as compared to GaAs is evident from the change in leakage current after irradiation. Further, a fast recovery of the photoresponse of GaN photodetectors after irradiation signifies their compatibility to operate in high radiation zones. The results presented here are found to be crucial in understanding the interaction of 60Co γ-irradiation with n+-GaN epilayers.

Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes

Science.gov (United States)

Ullah, A. R.; Carrad, D. J.; Krogstrup, P.; Nygârd, J.; Micolich, A. P.

2018-02-01

Doping is a common route to reducing nanowire transistor on-resistance but it has limits. A high doping level gives significant loss in gate performance and ultimately complete gate failure. We show that electrolyte gating remains effective even when the Be doping in our GaAs nanowires is so high that traditional metal-oxide gates fail. In this regime we obtain a combination of subthreshold swing and contact resistance that surpasses the best existing p -type nanowire metal-oxide semiconductor field-effect transistors (MOSFETs). Our subthreshold swing of 75 mV/dec is within 25 % of the room-temperature thermal limit and comparable with n -InP and n -GaAs nanowire MOSFETs. Our results open a new path to extending the performance and application of nanowire transistors, and motivate further work on improved solid electrolytes for nanoscale device applications.

Observation of an electron band above the Fermi level in FeTe0.55Se0.45 from in-situ surface doping

International Nuclear Information System (INIS)

Zhang, P.; Ma, J.; Qian, T.; Richard, P.; Ding, H.; Xu, N.; Xu, Y.-M.; Fedorov, A. V.; Denlinger, J. D.; Gu, G. D.

2014-01-01

We used in-situ potassium (K) evaporation to dope the surface of the iron-based superconductor FeTe 0.55 Se 0.45 . The systematic study of the bands near the Fermi level confirms that electrons are doped into the system, allowing us to tune the Fermi level of this material and to access otherwise unoccupied electronic states. In particular, we observe an electron band located above the Fermi level before doping that shares similarities with a small three-dimensional pocket observed in the cousin, heavily electron-doped KFe 2−x Se 2 compound.

Challenges and threats to implementing the fight against doping in sport.

Science.gov (United States)

Dvorak, Jiri; Saugy, Martial; Pitsiladis, Yannis P

2014-05-01

Prominent doping cases in certain sports have recently raised public awareness of doping and reinforced the perception that doping is widespread. Efforts to deal with doping in sport have intensified in recent years, yet the general public believes that the 'cheaters' are ahead of the testers. Therefore, there is an urgent need to change the antidoping strategy. For example, the increase in the number of individual drug tests conducted between 2005 and 2012 was approximately 90 000 and equivalent to an increase of about 50%, yet the number of adverse analytical findings remained broadly the same. There is also a strikingly different prevalence of doping substances and methods in sports such as a 0.03% prevalence of anabolic steroids in football compared to 0.4% in the overall WADA statistics. Future efforts in the fight against doping should therefore be more heavily based on preventative strategies such as education and on the analysis of data and forensic intelligence and also on the experiences of relevant stakeholders such as the national antidoping organisations, the laboratories, athletes or team physicians and related biomedical support staff. This strategy is essential to instigate the change needed to more effectively fight doping in sport.

Efficiency enhancement of InGaN/GaN light-emitting diodes with pin-doped GaN quantum barrier

International Nuclear Information System (INIS)

Sirkeli, Vadim P; Al-Daffaie, Shihab; Oprea, Ion; Küppers, Franko; Hartnagel, Hans L; Yilmazoglu, Oktay; Ong, Duu Sheng

2017-01-01

Blue InGaN/GaN light-emitting diodes with undoped, heavily Si-doped, Si delta-doped, heavily Mg-doped, Mg delta-doped, and Mg–Si pin-doped GaN barrier are investigated numerically. The simulation results demonstrate that the Mg–Si pin-doping in the GaN barrier effectively reduces the polarization-induced electric field between the InGaN well and the GaN barrier in the multiple quantum well, suppresses the quantum-confined Stark effect, and enhances the hole injection and electron confinement in the active region. For this light-emitting diode (LED) device structure, we found that the turn-on voltage is 2.8 V, peak light emission is at 415.3 nm, and internal quantum efficiency is 85.9% at 100 A cm −2 . It is established that the LED device with Mg–Si pin-doping in the GaN barrier has significantly improved efficiency and optical output power performance, and lower efficiency droop up to 400 A cm −2 compared with LED device structures with undoped or Si(Mg)-doped GaN barrier. (paper)

Doping of wide-bandgap titanium-dioxide nanotubes: optical, electronic and magnetic properties

Science.gov (United States)

Alivov, Yahya; Singh, Vivek; Ding, Yuchen; Cerkovnik, Logan Jerome; Nagpal, Prashant

2014-08-01

Doping semiconductors is an important step for their technological application. While doping bulk semiconductors can be easily achieved, incorporating dopants in semiconductor nanostructures has proven difficult. Here, we report a facile synthesis method for doping titanium-dioxide (TiO2) nanotubes that was enabled by a new electrochemical cell design. A variety of optical, electronic and magnetic dopants were incorporated into the hollow nanotubes, and from detailed studies it is shown that the doping level can be easily tuned from low to heavily-doped semiconductors. Using desired dopants - electronic (p- or n-doped), optical (ultraviolet bandgap to infrared absorption in co-doped nanotubes), and magnetic (from paramagnetic to ferromagnetic) properties can be tailored, and these technologically important nanotubes can be useful for a variety of applications in photovoltaics, display technologies, photocatalysis, and spintronic applications.Doping semiconductors is an important step for their technological application. While doping bulk semiconductors can be easily achieved, incorporating dopants in semiconductor nanostructures has proven difficult. Here, we report a facile synthesis method for doping titanium-dioxide (TiO2) nanotubes that was enabled by a new electrochemical cell design. A variety of optical, electronic and magnetic dopants were incorporated into the hollow nanotubes, and from detailed studies it is shown that the doping level can be easily tuned from low to heavily-doped semiconductors. Using desired dopants - electronic (p- or n-doped), optical (ultraviolet bandgap to infrared absorption in co-doped nanotubes), and magnetic (from paramagnetic to ferromagnetic) properties can be tailored, and these technologically important nanotubes can be useful for a variety of applications in photovoltaics, display technologies, photocatalysis, and spintronic applications. Electronic supplementary information (ESI) available: See DOI: 10.1039/c4nr02417f

Boron-doped nanodiamonds as possible agents for local hyperthermia

Science.gov (United States)

Vervald, A. M.; Burikov, S. A.; Vlasov, I. I.; Ekimov, E. A.; Shenderova, O. A.; Dolenko, T. A.

2017-04-01

In this work, the effective heating of surrounding water by heavily-boron-doped nanodiamonds (NDs) under laser irradiation of visible wavelength was found. Using Raman scattering spectroscopy of aqueous suspensions of boron-doped NDs, it was found that this abnormally high heating results in the weakening of hydrogen bonds much more so (2-5 times stronger) than for undoped NDs. The property of boron-doped NDs to heat a solvent under the influence of laser radiation (1-5 W cm-2) opens broad prospects for their use to create nanoagents for medical oncology and local hyperthermia.

Hydrogen-boron complexes in heavily boron-doped silicon treated with high concentration of hydrogen atoms

International Nuclear Information System (INIS)

Fukata, N.; Fukuda, S.; Sato, S.; Ishioka, K.; Kitajima, M.; Hishita, S.; Murakami, K.

2006-01-01

The formation of hydrogen (H)-related complexes was investigated in boron (B)-doped Si treated with high concentration of H. The isotope shifts of H-related Raman peaks by replacement of H to deuterium and 1 B to 11 B clearly showed the formation of the B-H complexes in which H directly bonds to B in Si. The results of the resistivity measurements suggested that the B acceptors are passivated via the formation of the B-H complexes, as well as the well-known passivation center in B-doped Si, namely, H-B passivation center

Proton irradiation induced defects in Cd and Zn doped InP

International Nuclear Information System (INIS)

Rybicki, G.C.; Williams, W.S.

1993-01-01

Proton irradiation induced defects in Zn and Cd doped InP have been studied by deep level transient spectroscopy, (DLTS). After 2 MeV proton irradiation the defects H4 and H5 were observed in lightly Zn doped InP, while the defects H3 and H5 were observed in more heavily Zn and Cd doped InP. The defect properties were not affected by the substitution of Cd for Zn, but the introduction rate of H5 was lower in Cd doped InP. The annealing rate of defects was also higher in Cd doped InP. The use of Cd doped InP may thus result in an InP solar cell with even greater radiation resistance

Insertion of a pentacene layer into the gold/poly(methyl methacrylate)/heavily doped p-type Si/indium device leading to the modulation of resistive switching characteristics

Science.gov (United States)

Hung, Cheng-Chun; Lin, Yow-Jon

2018-01-01

In order to get a physical insight into the pentacene interlayer-modulated resistive switching (RS) characteristics, the Au/pentacene/poly(methyl methacrylate) (PMMA)/heavily doped p-type Si (p+-Si)/In and Au/PMMA/p+-Si/In devices are fabricated and the device performance is provided. The Au/pentacene/PMMA/p+-Si/In device shows RS behavior, whereas the Au/PMMA/p+-Si/In device exhibits the set/reset-free hysteresis current-voltage characteristics. The insertion of a pentacene layer is a noticeable contribution to the RS characteristic. This is because of the occurrence of carrier accumulation/depletion in the pentacene interlayer. The transition from carrier depletion to carrier accumulation (carrier accumulation to carrier depletion) in pentacene occurring under negative (positive) voltage induces the process of set (reset). The switching conduction mechanism is primarily described as space charge limited conduction according to the electrical transport properties measurement. The concept of a pentacene/PMMA heterostructure opens a promising direction for organic memory devices.

Electrical property studies of neutron-transmutation-doped silicon

International Nuclear Information System (INIS)

Cleland, J.W.; Fleming, P.H.; Westbrook, R.D.; Wood, R.F.; Young, R.T.

1978-01-01

Results of studies of electrical properties of neutron-transmutation-doped (NTD) silicon are presented. Annealing requirements to remove lattice damage were obtained. The electrical role of clustered oxygen and defect-oxygen complex was investigated. An NTD epitaxial layer on a heavily doped n- or p- type substrate can be produced. There is no evident interaction between lithium introduced by diffusion and phosphorous 31 introduced by irradiation. There may be some type of pairing reaction between lithium 7 introduced by boron 10 fission and any remaining boron

High-beam quality, high-efficiency laser based on fiber with heavily Yb(3+)-doped phosphate core and silica cladding.

Science.gov (United States)

Egorova, O N; Semjonov, S L; Medvedkov, O I; Astapovich, M S; Okhrimchuk, A G; Galagan, B I; Denker, B I; Sverchkov, S E; Dianov, E M

2015-08-15

We have fabricated and tested a composite fiber with an Yb(3+)-doped phosphate glass core and silica cladding. Oscillation with a slope efficiency of 74% was achieved using core pumping at 976 nm with fiber lengths of 48-90 mm in a simple laser configuration, where the cavity was formed by a high-reflectivity Bragg grating and the cleaved fiber end. The measured M(2) factors were as low as 1.05-1.22 even though the fiber was multimode at the lasing wavelength.

Density Functional Investigation of Graphene Doped with Amine-Based Organic Molecules

Directory of Open Access Journals (Sweden)

Yeun Hee Hwang

2015-01-01

Full Text Available To improve the electronic properties of graphene, many doping techniques have been studied. Herein, we investigate the electronic and molecular structure of doped graphene using density functional theory, and we report the effects of amine-based benzene dopants adsorbed on graphene. Density functional theory (DFT calculations were performed to determine the role of amine-based aromatic compounds in graphene doping. These organic molecules bind to graphene through long-range interactions such as π-π interactions and C-H⋯π hydrogen bonding. We compared the electronic structures of pristine graphene and doped graphene to understand the electronic structure of doped graphene at the molecular level. Also, work functions of doped graphene were obtained from electrostatic potential calculations. A decrease in the work function was observed when the amine-based organic compounds were adsorbed onto graphene. Because these systems are based on physisorption, there was no obvious band structure change at point K at the Fermi level after doping. However, the amine-based organic dopants did change the absolute Fermi energy levels. In this study, we showed that the Fermi levels of the doped graphene were affected by the HOMO energy level of the dopants and by the intermolecular charge transfer between the adsorbed molecules and graphene.

An In0.52Al0.48As/n+-In0.53Ga0.47As MISFET with a modulation-doped channel

International Nuclear Information System (INIS)

DelAlamo, J.A.

1989-01-01

A heterostructure metal-insulator-semiconductor field-effect transistor (MISFET) with a modulation-doped channel is proposed. In this device, a very thin undoped subchannel is located between the undoped wide-bandgap insulator and a thin heavily doped channel. In the depletion mode of operation, electron transport takes place along the heavily doped channel. When the device enters the accumulation mode of operation, electrons pile up against the heterointerface in the high-mobility undoped subchannel. This should result in markedly improved transport characteristics at the onset of accumulation. The concept is demonstrated in the In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As system on InP

Photovoltaic investigation of minority carrier lifetime in the heavily-doped emitter layer of silicon junction solar cell

Science.gov (United States)

Ho, C.-T.

1982-01-01

The results of experiments on the recombination lifetime in a phosphorus diffused N(+) layer of a silicon solar cell are reported. The cells studied comprised three groups of Czochralski grown crystals: boron doped to one ohm-cm, boron doped to 6 ohm-cm, and aluminum doped to one ohm-cm, all with a shunt resistance exceeding 500 kilo-ohms. The characteristic bulk diffusion length of a cell sample was determined from the short circuit current response to light at a wavelength of one micron. The recombination rates were obtained by measurement of the open circuit voltage as a function of the photogeneration rate. The recombination rate was found to be dependent on the photoinjection level, and is positive-field controlled at low photoinjection, positive-field influence Auger recombination at a medium photoinjection level, and negative-field controlled Auger recombination at a high photoinjection level.

Further considerations for damping in heavily insulated pipe systems

International Nuclear Information System (INIS)

Anderson, M.J.; Lindquist, M.R.; Severud, L.K.

1985-01-01

Over the past several years a body of test data has been accumulated which demonstrates that damping in small diameter heavily insulated pipe systems is much larger than presently recommended by Regulatory Guide 1.61. This data is generally based on pipe systems using a stand-off insulation design with a heater annulus. Additional tests have how been completed on similar pipe systems using a strap-on insulation design without the heater annulus. Results indicate some reduction in damping over the stand-off designs. Test data has also been obtained on a larger sixteen-inch diameter heavily insulated pipe system. Results of these two additional test series are presented. Revised damping values for seismic design of heavily insulated pipe systems are then recommended

Further considerations for damping in heavily insulated pipe systems

International Nuclear Information System (INIS)

Anderson, M.J.; Lindquist, M.R.; Severud, L.K.

1985-01-01

Over the past several years a body of test data has been accumulated which demonstrates that damping in small diameter heavily insulated pipe systems is much larger than presently recommended by Regulatory Code 1.61. This data is generally based on pipe systems using a stand-off insulation design with a heater annulus. Additional tests have now been completed on similar pipe systems using a strap-on insulation design without the heater annulus. Results indicate some reduction in damping over the stand-off designs. Test data has also been obtained on a larger sixteen-inch diameter heavily insulated pipe system. Results of these two additional test series are presented. Revised damping values for seismic design for heavily insulated pipe systems are then recommended

Current Status of Doping in Japan Based on Japan Anti-Doping Disciplinary Panels of the Japan Anti-Doping Agency (JADA): A Suggestion on Anti-Doping Activities by Pharmacists in Japan.

Science.gov (United States)

Imanishi, Takashi; Kawabata, Takayoshi; Takayama, Akira

2017-01-01

In 2009, the Japan Anti-Doping Agency (JADA) established the "Sports Pharmacist Accreditation Program" to prevent doping in sports. Since then, anti-doping activities in Japan have been attracting attention. In this study, we investigated research about the current status of doping from 2007 to 2014 in Japan to make anti-doping activities more concrete, and we also discussed future anti-doping activities by pharmacists. In Japan, bodybuilding was the sporting event with the highest number and rate of doping from 2007 to 2014. Many of the positive doping cases were detected for class S1 (anabolic agents), S5 (diuretics and masking agents), and S6 (stimulants). Within class S1, supplements were the main cause of positive doping. Within class S5, medicines prescribed by medical doctors were the main cause of positive doping. Within class S6, non-prescription medicines (e.g., OTC) were the main cause of positive doping. When we looked at the global statistics on doping, many of the positive doping cases were detected for class S1. On comparing the Japanese statistics with the global statistics, the rate of positive doping caused by class S1 was significantly lower, but that caused by classes S5 and S6 was significantly higher in Japan than in the world. In conclusion, pharmacists in Japan should pay attention to class S1, S5, and S6 prohibited substances and to the sport events of bodybuilding. Based on this study, sports pharmacists as well as common pharmacists should suggest new anti-doping activities to prevent doping in the future.

Heavily Graphitic-Nitrogen Self-doped High-porosity Carbon for the Electrocatalysis of Oxygen Reduction Reaction

Science.gov (United States)

Feng, Tong; Liao, Wenli; Li, Zhongbin; Sun, Lingtao; Shi, Dongping; Guo, Chaozhong; Huang, Yu; Wang, Yi; Cheng, Jing; Li, Yanrong; Diao, Qizhi

2017-11-01

Large-scale production of active and stable porous carbon catalysts for oxygen reduction reaction (ORR) from protein-rich biomass became a hot topic in fuel cell technology. Here, we report a facile strategy for synthesis of nitrogen-doped porous nanocarbons by means of a simple two-step pyrolysis process combined with the activation of zinc chloride and acid-treatment process, in which kidney bean via low-temperature carbonization was preferentially adopted as the only carbon-nitrogen sources. The results show that this carbon material exhibits excellent ORR electrocatalytic activity, and higher durability and methanol-tolerant property compared to the state-of-the-art Pt/C catalyst for the ORR, which can be mainly attributed to high graphitic-nitrogen content, high specific surface area, and porous characteristics. Our results can encourage the synthesis of high-performance carbon-based ORR electrocatalysts derived from widely-existed natural biomass.

Nanoparticles doped film sensing based on terahertz metamaterials

Science.gov (United States)

Liu, Weimin; Fan, Fei; Chang, Shengjiang; Hou, Jiaqing; Chen, Meng; Wang, Xianghui; Bai, Jinjun

2017-12-01

A nanoparticles concentration sensor based on doped film and terahertz (THz) metamaterial has been proposed. By coating the nanoparticles doped polyvinyl alcohol (PVA) film on the surface of THz metamaterial, the effects of nanoparticle concentration on the metamaterial resonances are investigated through experiments and numerical simulations. Results show that resonant frequency of the metamaterial linearly decreases with the increment of doping concentration. Furthermore, numerical simulations illustrate that the redshift of resonance results from the changes of refractive index of the doped film. The concentration sensitivity of this sensor is 3.12 GHz/0.1%, and the refractive index sensitivity reaches 53.33 GHz/RIU. This work provides a non-contact, nondestructive and sensitive method for the detection of nanoparticles concentration and brings out a new application on THz film metamaterial sensing.

Affinity-based biosensors as promising tools for gene doping detection.

Science.gov (United States)

Minunni, Maria; Scarano, Simona; Mascini, Marco

2008-05-01

Innovative bioanalytical approaches can be foreseen as interesting means for solving relevant emerging problems in anti-doping control. Sport authorities fear that the newer form of doping, so-called gene doping, based on a misuse of gene therapy, will be undetectable and thus much less preventable. The World Anti-Doping Agency has already asked scientists to assist in finding ways to prevent and detect this newest kind of doping. In this Opinion article we discuss the main aspects of gene doping, from the putative target analytes to suitable sampling strategies. Moreover, we discuss the potential application of affinity sensing in this field, which so far has been successfully applied to a variety of analytical problems, from clinical diagnostics to food and environmental analysis.

Different annealing temperature suitable for different Mg doped P-GaN

Science.gov (United States)

Liu, S. T.; Yang, J.; Zhao, D. G.; Jiang, D. S.; Liang, F.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Li, X.; Liu, W.; Zhang, L. Q.; Long, H.; Li, M.

2017-04-01

In this work, epitaxial GaN with different Mg doping concentration annealed at different temperature is investigated. Through Hall and PL spectra measurement we found that when Mg doping concentration is different, different annealing temperature is needed for obtaining the best p-type conduction of GaN, and this difference comes from the different influence of annealing on compensated donors. For ultra-heavily Mg doped sample, the process of Mg related donors transferring to non-radiative recombination centers is dominated, so the performance of P-GaN deteriorates with temperature increase. But for low Mg doped sample, the process of Mg related donors transfer to non-raditive recombination is weak compare to the Mg acceptor activation, so along the annealing temperature increase the performance GaN gets better.

Application of an improved band-gap narrowing model to the numerical simulation of recombination properties of phosphorus-doped silicon emitters

Energy Technology Data Exchange (ETDEWEB)

Schumacher, J.O. [Fraunhofer Institute for Solar Energy Systems ISE, Oltmannsstr, 5, D-79100 Freiburg (Germany); Altermatt, P.P.; Heiser, G.; Aberle, A.G. [Photovoltaics Special Research Centre, University of NSW, 2052 Sydney (Australia)

2001-01-01

The commonly used band-gap narrowing (BGN) models for crystalline silicon do not describe heavily doped emitters with desirable precision. One of the reasons for this is that the applied BGN models were empirically derived from measurements assuming Boltzmann statistics. We apply a new BGN model derived by Schenk from quantum mechanical principles and demonstrate that carrier degeneracy and the new BGN model both substantially affect the electron-hole product within the emitter region. Simulated saturation current densities of heavily phosphorus-doped emitters, calculated with the new BGN model, are lower than results obtained with the widely used empirical BGN model of del Alamo.

Excimer laser doping technique for application in an integrated CdTe imaging device

CERN Document Server

Mochizuki, D; Aoki, T; Tomita, Y; Nihashi, T; Hatanaka, Y

1999-01-01

CdTe is an attractive semiconductor material for applications in solid-state high-energy X-ray and gamma-ray imaging systems because of its high absorption coefficient, large band gap, good mobility lifetime product of holes and stability at normal atmospheric conditions. We propose a new concept for fabricating an integrated CdTe with monolithic circuit configuration for two-dimensional imaging systems suitable for medical, research or industrial applications and operation at room temperature. A new doping technique has been recently developed that employs excimer laser radiation to diffuse impurity atoms into the semiconductor. Accordingly, heavily doped n- and p-type layers with resistivities less than 1 OMEGA cm can be formed on the high resistive CdTe crystals. We have further extended this technique for doping with spatial pattern. We will present the laser doping technique and various results thus obtained. Spatially patterned doping is demonstrated and we propose the use of these doping techniques for...

Coexistence of magnetism and superconductivity in the hole doped FeAs-based superconducting compound

International Nuclear Information System (INIS)

Lu, T.P.; Wu, C.C.; Chou, W.H.; Lan, M.D.

2010-01-01

The magnetic and superconducting properties of the Sm-doped FeAs-based superconducting compound were investigated under wide ranges of temperature and magnetic field. After the systematical magnetic ion substitution, the superconducting transition temperature decreases with increasing magnetic moment. The hysteresis loop of the La 0.87-x Sm x Sr 0.13 FeAsO sample shows a superconducting hysteresis and a paramagnetic background signal. The paramagnetic signal is mainly attributed to the Sm moments. The experiment demonstrates that the coexistence of magnetism and superconductivity in the hole doped FeAs-based superconducting compounds is possible. Unlike the electron doped FeAs-based superconducting compounds SmFeAsOF, the hole doped superconductivity is degraded by the substitution of La by Sm. The hole-doped and electron-doped sides are not symmetric.

Electrical activation of nitrogen heavily implanted 3C-SiC(1 0 0)

Energy Technology Data Exchange (ETDEWEB)

Li, Fan, E-mail: f.li.1@warwick.ac.uk [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom); Sharma, Yogesh; Shah, Vishal; Jennings, Mike [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom); Pérez-Tomás, Amador [ICN2 – Institut Catala de Nanociència i Nanotecnologia, Campus UAB, 08193 Bellaterra, Barcelona (Spain); Myronov, Maksym [Physics Department, University of Warwick, Coventry CV4 7AL (United Kingdom); Fisher, Craig [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom); Leadley, David [Physics Department, University of Warwick, Coventry CV4 7AL (United Kingdom); Mawby, Phil [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom)

2015-10-30

Highlights: • Nitrogen is fully activated by 1175 °C annealing for 1.5 × 10{sup 19} cm{sup −3} doped 3C-SiC. • Free donor concentration is found to readily saturate in 3C-SiC at ∼7 × 10{sup 19} cm{sup −3}. • 3C-SiC is found to have complete donor thermal ionization above 150 K. • Donor in 1.5 × 10{sup 19} cm{sup −3} nitrogen implanted 3C-SiC has an energy level ∼15 meV. • The SiO{sub 2} cap is found to have a bigger influence on low and medium doped samples. - Abstract: A degenerated wide bandgap semiconductor is a rare system. In general, implant levels lie deeper in the band-gap and carrier freeze-out usually takes place at room temperature. Nevertheless, we have observed that heavily doped n-type degenerated 3C-SiC films are achieved by nitrogen implantation level of ∼6 × 10{sup 20} cm{sup −3} at 20 K. According to temperature dependent Hall measurements, nitrogen activation rates decrease with the doping level from almost 100% (1.5 × 10{sup 19} cm{sup −3}, donor level 15 meV) to ∼12% for 6 × 10{sup 20} cm{sup −3}. Free donors are found to saturate in 3C-SiC at ∼7 × 10{sup 19} cm{sup −3}. The implanted film electrical performances are characterized as a function of the dopant doses and post implantation annealing (PIA) conditions by fabricating Van der Pauw structures. A deposited SiO{sub 2} layer was used as the surface capping layer during the PIA process to study its effect on the resultant film properties. From the device design point of view, the lowest sheet resistivity (∼1.4 mΩ cm) has been observed for medium doped (4 × 10{sup 19} cm{sup −3}) sample with PIA 1375 °C 2 h without a SiO{sub 2} cap.

Performance of conversion efficiency of a crystalline silicon solar cell with base doping density

Directory of Open Access Journals (Sweden)

Gokhan Sahin

Full Text Available In this study, we investigate theoretically the electrical parameters of a crystalline silicon solar cell in steady state. Based on a one-dimensional modeling of the cell, the short circuit current density, the open circuit voltage, the shunt and series resistances and the conversion efficiency are calculated, taking into account the base doping density. Either the I-V characteristic, series resistance, shunt resistance and conversion efficiency are determined and studied versus base doping density. The effects applied of base doping density on these parameters have been studied. The aim of this work is to show how short circuit current density, open circuit voltage and parasitic resistances are related to the base doping density and to exhibit the role played by those parasitic resistances on the conversion efficiency of the crystalline silicon solar. Keywords: Crystalline silicon solar cell, Base doping density, Series resistance, Shunt resistance, Conversion efficiency

Spin-Glass Transition and Giant Paramagnetism in Heavily Hole-Doped Bi2Sr2Co2Oy

Science.gov (United States)

Hsu, Hung Chang; Lee, Wei-Li; Lin, Jiunn-Yuan; Young, Ben-Li; Kung, Hsiang-Hsi; Huang, Jian; Chou, Fang Cheng

2014-02-01

Hole-doped single crystals of misfit-layered cobaltate Bi2-xPbxSr2-zCo2Oy (x = 0-0.61, y = 8.28-8.62, and z = 0.01-0.22) have been successfully grown using the optical floating-zone method. Heavier hole doping has been achieved through both Pb substitution in the Bi site and the more effective Sr vacancy formation. The Co4+ : Co3+ ratio can be raised significantly from its original ˜1 : 1 to 4.5 : 1, as confirmed by iodometric titration. A spin-glass transition temperature of Tg ˜ 70 K is confirmed by ac susceptibility measurement when the Co4+ : Co3+ ratio becomes higher than 2 : 1, presumably owing to the significantly increased probability of triangular geometrical frustration among antiferromagnetically coupled localized Co4+ spins.

Experimental results on performance improvement of doped carbon-base materials

International Nuclear Information System (INIS)

Xu Zengyu

2002-01-01

Carbon-base materials is one of candidate plasma facing materials and have been widely used in current tokamak facilities in the world. But some defect properties are presented on high yield of chemical sputtering , high yield of radiation enhancement sublimate (RES), cracking after heat flux and so on. It can be improved by doped some little other elements into the carbon-base materials, such as boron, silicon, titanium and so on. Experimental results indicate that it is feasible and successful to improve thermo-physics and chemical properties of carbon-base materials by multi-element doped. Doped 12 % silicon can strained RES and chemical sputtering yield do not changed. It is the same level of chemical sputtering yield for B 4 C from 3 % to 10 % , but their resistance thermal shock properties ability increases with B 4 C increases

Scintillation properties of quantum-dot doped styrene based plastic scintillators

International Nuclear Information System (INIS)

Park, J.M.; Kim, H.J.; Hwang, Y.S.; Kim, D.H.; Park, H.W.

2014-01-01

We fabricated quantum-dot doped plastic scintillators in order to control the emission wavelength. We studied the characterization of the quantum-dots (CdSe/ZnS) and PPO (2, 5-diphenyloxazole) doped styrene based plastic scintillators. PPO is usually used as a dopant to enhance the scintillation properties of organic scintillators with a maximum emission wavelength of 380 nm. In order to study the scintillation properties of the quantum-dots doped plastic scintillators, the samples were irradiated with X-ray, photon, and 45 MeV proton beams. We observed that only PPO doped plastic scintillators shows a luminescence peak around 380 nm. However, both the quantum-dots and PPO doped plastic scintillators shows luminescence peaks around 380 nm and 520 nm. Addition of quantum-dots had shifted the luminescence spectrum from 380 nm (PPO) toward the region of 520 nm (Quantum-dots). Emissions with wavelength controllable plastic scintillators can be matched to various kinds of photosensors such as photomultiplier tubes, photo-diodes, avalanche photo-diodes, and CCDs, etc. Also quantum-dots doped plastic scintillator, which is irradiated 45 MeV proton beams, shows that the light yield of quantum-dots doped plastic scintillator is increases as quantum-dots doping concentration increases at 520 nm. And also the plastic scintillators were irradiated with Cs-137 γ-ray for measuring fluorescence decay time. -- Highlights: • Quantum-dot doped plastic scintillator is grown by the thermal polymerization method. • Quantum-dot doped plastic scintillators can control the emission wavelength to match with photo-sensor. • Quantum-dots and PPO doped plastic scintillators emitted luminescence peaks around 380 nm and 520 nm. • We observed the energy transfer from PPO to quantum-dot in the quantum-dot doped plastic scintillator

Scintillation properties of quantum-dot doped styrene based plastic scintillators

Energy Technology Data Exchange (ETDEWEB)

Park, J.M.; Kim, H.J., E-mail: hongjooknu@gmail.com; Hwang, Y.S.; Kim, D.H.; Park, H.W.

2014-02-15

We fabricated quantum-dot doped plastic scintillators in order to control the emission wavelength. We studied the characterization of the quantum-dots (CdSe/ZnS) and PPO (2, 5-diphenyloxazole) doped styrene based plastic scintillators. PPO is usually used as a dopant to enhance the scintillation properties of organic scintillators with a maximum emission wavelength of 380 nm. In order to study the scintillation properties of the quantum-dots doped plastic scintillators, the samples were irradiated with X-ray, photon, and 45 MeV proton beams. We observed that only PPO doped plastic scintillators shows a luminescence peak around 380 nm. However, both the quantum-dots and PPO doped plastic scintillators shows luminescence peaks around 380 nm and 520 nm. Addition of quantum-dots had shifted the luminescence spectrum from 380 nm (PPO) toward the region of 520 nm (Quantum-dots). Emissions with wavelength controllable plastic scintillators can be matched to various kinds of photosensors such as photomultiplier tubes, photo-diodes, avalanche photo-diodes, and CCDs, etc. Also quantum-dots doped plastic scintillator, which is irradiated 45 MeV proton beams, shows that the light yield of quantum-dots doped plastic scintillator is increases as quantum-dots doping concentration increases at 520 nm. And also the plastic scintillators were irradiated with Cs-137 γ-ray for measuring fluorescence decay time. -- Highlights: • Quantum-dot doped plastic scintillator is grown by the thermal polymerization method. • Quantum-dot doped plastic scintillators can control the emission wavelength to match with photo-sensor. • Quantum-dots and PPO doped plastic scintillators emitted luminescence peaks around 380 nm and 520 nm. • We observed the energy transfer from PPO to quantum-dot in the quantum-dot doped plastic scintillator.

Genetic algorithm based approach to investigate doped metal oxide materials: Application to lanthanide-doped ceria

Science.gov (United States)

Hooper, James; Ismail, Arif; Giorgi, Javier B.; Woo, Tom K.

2010-06-01

A genetic algorithm (GA)-inspired method to effectively map out low-energy configurations of doped metal oxide materials is presented. Specialized mating and mutation operations that do not alter the identity of the parent metal oxide have been incorporated to efficiently sample the metal dopant and oxygen vacancy sites. The search algorithms have been tested on lanthanide-doped ceria (L=Sm,Gd,Lu) with various dopant concentrations. Using both classical and first-principles density-functional-theory (DFT) potentials, we have shown the methodology reproduces the results of recent systematic searches of doped ceria at low concentrations (3.2% L2O3 ) and identifies low-energy structures of concentrated samarium-doped ceria (3.8% and 6.6% L2O3 ) which relate to the experimental and theoretical findings published thus far. We introduce a tandem classical/DFT GA algorithm in which an inexpensive classical potential is first used to generate a fit gene pool of structures to enhance the overall efficiency of the computationally demanding DFT-based GA search.

Extended X-ray absorption fine structure studies of impulsive-type hardening in the heavily Be-doped ZnSe ternaries

Energy Technology Data Exchange (ETDEWEB)

Khan, Shabina; Singh, Pankaja [Barkatullah University, Bhopal (India); Mazher, Javed [Addis Ababa University, Addis Ababa (Ethiopia)

2014-02-15

Inherently soft zinc-selenides have been hardened through beryllium doping. High-quality stoichiometric ternaries of Be{sub x}Zn{sub 1-x}Se have been synthesized by using the Bridgeman technique. State-of-art X-ray absorption spectroscopy is performed by varying the concentration of the cationic dopant, Be, from 6% to 55% in the host ZnSe. Extended X-ray absorption fine structure analyses are carried out to study the next-neighbor and next nearest neighbor atomic positions, nature of the substitutional doping, extent of bond length homogeneity, the presence of involuntary contrast among path distances, and the crossover from a soft to a hard character of the ternary with increasing Be concentration. Our results indicate the presence of a non-regular impulsive hardening in the ternary with a disparity at the lower and the higher Be-doping levels, which are discussed vis-a-vis self-accommodation of substitutional dopants in the host lattice.

Exploring the doping effects of Ag in p-type PbSe compounds with enhanced thermoelectric performance

Science.gov (United States)

Wang, Shanyu; Zheng, Gang; Luo, Tingting; She, Xiaoyu; Li, Han; Tang, Xinfeng

2011-11-01

In this study, we prepared a series of Ag-doped PbSe bulk materials by a melting-quenching process combined with a subsequent spark plasma sintering process, and systematically investigated the doping effects of Ag on the thermoelectric properties. Ag substitution in the Pb site does not introduce resonant levels near the valence band edge or detectable change in the density of state in the vicinity of the Fermi level, but moves the Fermi level down and increases the carrier concentration to a maximum value of ~4.7 × 1019 cm-3 which is still insufficient for heavily doped PbSe compounds. Nonetheless, the non-monotonic variation in carrier concentration with increasing Ag content indicates that Ag doping reaches the solution limit at ~1.0% and the excessive Ag presumably acts as donors in the materials. Moreover, the large energy gap of the PbSe-based material wipes off significant 'roll-over' in the Seebeck coefficient at elevated temperatures which gives rise to high power factors, being comparable to p-type Te analogues. Consequently, the maximum ZT reaches ~1.0 for the 1.5% Ag-doped samples with optimized carrier density, which is ~70% improvement in comparison with an undoped sample and also superior to the commercialized p-type PbTe materials.

Ultramicroporous carbon with extremely narrow pore distribution and very high nitrogen doping for efficient methane mixture gases upgrading

KAUST Repository

Yao, Kexin

2017-06-24

It is notably challenging to fabricate heavily heteroatom-doped porous carbonaceous materials with narrow ultramicropore size distributions for highly effective mixed-gas separation. In this study, new carbon-based materials with narrow ultramicropore size (<7 Å) distributions (>95%) and high N doping contents (>10 at%) are fabricated through the pyrolysis of a perchloro-substituted porous covalent triazine-based framework (ClCTF). In particular, the sample prepared at 650 °C (ClCTF-1-650) possesses the highest ultramicropores content (98%) and large N content (12 at%) and demonstrates a very high CH and CO capacity, as well as a low N uptake under ambient conditions. The extraordinarily high CH/N and CO/N selectivities correlate with both the ideal adsorption solution theory (IAST) method and performed dynamic separation experiments (breakthrough experiments). The results reported in this study far exceed the CH/N and CO/N selectivities of previously reported carbon-based adsorbents including various nitrogen-doped ones. These results are believed to be associated with the unusually high N content, as well as the suitably narrow ultramicropore size distribution. This report introduces a new pathway to design porous absorbents with precisely controlled ultramicropores for gas separation.

Effect of Mg Doping on the Photoluminescence of GaN:Mg Films by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

International Nuclear Information System (INIS)

Sui Yan-Ping; Yu Guang-Hui

2011-01-01

We investigate undoped GaN and Mg-doped GaN grown by rf plasma-assisted molecular beam epitaxy (MBE) with different Mg concentrations by photoluminescence (PL) at low temperature, Hall-effect and XRD measurements. In the PL spectra of lightly Mg-doped GaN films, a low intensity near band edge (NBE) emission and strong donor-acceptor pair (DAP) emission with its phonon replicas are observed. As the Mg concentration is increased, the DAP and NBE bands become weaker and a red shift of these bands is observed in the PL spectra. Yellow luminescence (YL) is observed in heavily Mg-doped GaN. The x-ray diffraction is employed to study the structure of the films. Hall measurement shows that there is a maximum value (3.9 × 10 18 cm −3 ) of hole concentration with increasing Mg source temperature for compensation effect. PL spectra of undoped GaN are also studied under N-rich and Ga-rich growth conditions. Yellow luminescences of undoped Ga-rich GaN and heavily Mg-doped GaN are compared, indicating the different origins of the YL bands. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Synthesis and photocatalytic activity of graphene based doped TiO2 nanocomposites

International Nuclear Information System (INIS)

Gu, Yongji; Xing, Mingyang; Zhang, Jinlong

2014-01-01

Graphical abstract: - Highlights: • Graphene based doped TiO 2 nanocomposites were prepared. • The intimate contact between doped TiO 2 and graphene is achieved simultaneously. • These nanocomposites showed higher photocatalytic activity than TiO 2 and doped TiO 2 . • Photocatalytic mechanism was explained thoroughly. - Abstract: The nanocomposites of reduced graphene oxide based nitrogen doped TiO 2 (N–TiO 2 –RGO) and reduced graphene oxide based nitrogen and vanadium co-doped TiO 2 (N, V–TiO 2 –RGO) were prepared via a facile hydrothermal reaction of graphene oxide and TiO 2 in a water solvent. In this hydrothermal treatment, the reduction of graphene oxide and the intimate contact between nitrogen doped TiO 2 (N–TiO 2 ) or nitrogen and vanadium co-doped TiO 2 (N,V–TiO 2 ) and the RGO sheet is achieved simultaneously. Both N–TiO 2 –RGO and N,V–TiO 2 –RGO nanocomposites exhibit much higher visible light photocatalytic activity than N–TiO 2 and N,V–TiO 2 , and the order of visible light photocatalytic activity is N,V–TiO 2 –RGO > N–TiO 2 –RGO > N,V–TiO 2 > N–TiO 2 > TiO 2 . According to the characterization, the enhanced photocatalytic activity of the nanocomposites is attributed to reasons, such as enhancement of adsorption of pollutants, light absorption intensity, minimizing the recombination of photoinduced electrons and holes and more excited states of these nanocomposites under visible light irradiation. Overall, this work provides a more marked contrast of graphene based semiconductor nanocomposites and a more comprehensive explanation of the mechanism

Chemical state analysis of heavily phosphorus-doped epitaxial silicon films grown on Si (1 0 0) by X-ray photoelectron spectroscopy

Science.gov (United States)

Lee, Minhyeong; Kim, Sungtae; Ko, Dae-Hong

2018-06-01

In this work, we investigated the chemical bonding states in highly P-doped Si thin films epitaxially grown on Si (0 0 1) substrates using high-resolution X-ray photoelectron spectroscopy (HR-XPS). HR-XPS P 2p core-level spectra clearly show spin-orbital splitting between P 2p1/2 and P 2p3/2 peaks in Si films doped with a high concentration of P. Moreover, the intensities of P 2p1/2 and P 2p3/2 peaks for P-doped Si films increase with P concentrations, while their binding energies remained almost identical. These results indicate that more P atoms are incorporated into the substitutional sites of the Si lattice with the increase of P concentrations. In order to identify the chemical states of P-doped Si films shown in XPS Si 2p spectra, the spectra of bulk Si were subtracted from those of Si:P samples, which enables us to clearly identify the new chemical state related to Sisbnd P bonds. We observed that the presence of the two well-resolved new peaks only for the Si:P samples at the binding energy higher than those of a Sisbnd Si bond, which is due to the strong electronegativity of P than that of Si. Experimental findings in this study using XPS open up new doors for evaluating the chemical states of P-doped Si materials in fundamental researches as well as in industrial applications.

A comparative study of semiconductor-based plasmonic metamaterials

DEFF Research Database (Denmark)

Naik, Gururaj V.; Boltasseva, Alexandra

2011-01-01

and very large negative real permittivity values, and in addition, their optical properties cannot be tuned. These issues that put severe constraints on the device applications of MMs could be overcome if semiconductors are used as plasmonic materials instead of metals. Heavily doped, wide bandgap oxide...... semiconductors could exhibit both a small negative real permittivity and relatively small losses in the NIR. Heavily doped oxides of zinc and indium were already reported to be good, low loss alternatives to metals in the NIR range. Here, we consider these transparent conducting oxides (TCOs) as alternative...

A Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics

KAUST Repository

Kiefer, David; Yu, Liyang; Fransson, Erik; Gó mez, André s; Primetzhofer, Daniel; Amassian, Aram; Campoy-Quiles, Mariano; Mü ller, Christian

2016-01-01

Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm−1 and Seebeck coefficient from 100 to 60 μV K−1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m−1 K−1 gives rise to a thermoelectric Figure of merit ZT ∼ 10−4 that remains unaltered for an insulator content of more than 60 wt%. Free-standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends.

A Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics

KAUST Repository

Kiefer, David

2016-09-01

Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm−1 and Seebeck coefficient from 100 to 60 μV K−1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m−1 K−1 gives rise to a thermoelectric Figure of merit ZT ∼ 10−4 that remains unaltered for an insulator content of more than 60 wt%. Free-standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends.

Stratigraphy of a diamond epitaxial three-dimensional overgrowth using doping superlattices

Science.gov (United States)

Lloret, F.; Fiori, A.; Araujo, D.; Eon, D.; Villar, M. P.; Bustarret, E.

2016-05-01

The selective doped overgrowth of 3D mesa patterns and trenches has become an essential fabrication step of advanced monolithic diamond-based power devices. The methodology here proposed combines the overgrowth of plasma-etched cylindrical mesa structures with the sequential growth of doping superlattices. The latter involve thin heavily boron doped epilayers separating thicker undoped epilayers in a periodic fashion. Besides the classical shape analysis under the scanning electron microscope relying on the appearance of facets corresponding to the main crystallographic directions and their evolution toward slow growing facets, the doping superlattices were used as markers in oriented cross-sectional lamellas prepared by focused ion beam and observed by transmission electron microscopy. This stratigraphic approach is shown here to be applicable to overgrown structures where faceting was not detectable. Intermediate growth directions were detected at different times of the growth process and the periodicity of the superlattice allowed to calculate the growth rates and parameters, providing an original insight into the planarization mechanism. Different configurations of the growth front were obtained for different sample orientations, illustrating the anisotropy of the 3D growth. Dislocations were also observed along the lateral growth fronts with two types of Burger vector: b 01 1 ¯ = /1 2 [ 01 1 ¯ ] and b 112 = /1 6 [ 112 ] . Moreover, the clustering of these extended defects in specific regions of the overgrowth prompted a proposal of two different dislocation generation mechanisms.

Compensation and persistent photocapacitance in homoepitaxial Sn-doped β-Ga2O3

Science.gov (United States)

Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V.; Gogova, D.; Tarelkin, S. A.; Pearton, S. J.

2018-03-01

The electrical properties of epitaxial β-Ga2O3 doped with Sn (1016-9 × 1018 cm-3) and grown by metalorganic chemical vapor deposition on semi-insulating β-Ga2O3 substrates are reported. Shallow donors attributable to Sn were observed only in a narrow region near the film/substrate interface and with a much lower concentration than the total Sn density. For heavily Sn doped films (Sn concentration, 9 × 1018 cm-3), the electrical properties in the top portion of the layer were determined by deep centers with a level at Ec-0.21 eV not described previously. In more lightly doped layers, the Ec-0.21 eV centers and deeper traps at Ec-0.8 eV were present, with the latter pinning the Fermi level. Low temperature photocapacitance and capacitance voltage measurements of illuminated samples indicated the presence of high densities (1017-1018 cm-3) of deep acceptors with an optical ionization threshold of 2.3 eV. Optical deep level transient spectroscopy (ODLTS) and photoinduced current transient spectroscopy (PICTS) detected electron traps at Ec-0.8 eV and Ec-1.1 eV. For lightly doped layers, the compensation of film conductivity was mostly provided by the Ec-2.3 eV acceptors. For heavily Sn doped films, deep acceptor centers possibly related to Ga vacancies were significant. The photocapacitance and the photocurrent caused by illumination at low temperatures were persistent, with an optical threshold of 1.9 eV and vanished only at temperatures of ˜400 K. The capture barrier for electrons causing the persistent photocapacitance effect was estimated from ODLTS and PICTS to be 0.25-0.35 eV.

Optical Gaps in Pristine and Heavily Doped Silicon Nanocrystals: DFT versus Quantum Monte Carlo Benchmarks.

Science.gov (United States)

Derian, R; Tokár, K; Somogyi, B; Gali, Á; Štich, I

2017-12-12

We present a time-dependent density functional theory (TDDFT) study of the optical gaps of light-emitting nanomaterials, namely, pristine and heavily B- and P-codoped silicon crystalline nanoparticles. Twenty DFT exchange-correlation functionals sampled from the best currently available inventory such as hybrids and range-separated hybrids are benchmarked against ultra-accurate quantum Monte Carlo results on small model Si nanocrystals. Overall, the range-separated hybrids are found to perform best. The quality of the DFT gaps is correlated with the deviation from Koopmans' theorem as a possible quality guide. In addition to providing a generic test of the ability of TDDFT to describe optical properties of silicon crystalline nanoparticles, the results also open up a route to benchmark-quality DFT studies of nanoparticle sizes approaching those studied experimentally.

Characteristic of doping and diffusion of heavily doped n and p type InP and InGaAs epitaxial layers grown by metal organic chemical vapor deposition

International Nuclear Information System (INIS)

Pinzone, C.J.; Dupuis, R.D.; Ha, N.T.; Luftman, H.S.; Gerrard, N.D.

1990-01-01

Electronic and photonic device applications of the InGaAs/InP materials system often require the growth of epitaxial material doped to or near the solubility limit of the impurity in the host material. These requirements present an extreme challenge for the crystal grower. To produce devices with abrupt dopant profiles, preserve the junction during subsequent growth, and retain a high degree of crystalline perfection, it is necessary to understand the limits of dopant incorporation and the behavior of the impurity in the material. In this study, N-type doping above 10 19 cm -3 has been achieved in InP and InGaAs using Sn as a dopant. P-type Zn doping at these levels has also been achieved in these materials but p type activation above ∼3 x 10 18 cm -3 in InP has not been seen. All materials were grown by the metalorganic chemical vapor deposition (MOCVD) crystal growth technique. Effective diffusion coefficients have been measured for Zn and Sn in both materials from analysis of secondary ion mass spectra (SIMS) of specially grown and annealed samples

Exploring the doping effects of Ag in p-type PbSe compounds with enhanced thermoelectric performance

International Nuclear Information System (INIS)

Wang Shanyu; Zheng Gang; Luo Tingting; She Xiaoyu; Li Han; Tang Xinfeng

2011-01-01

In this study, we prepared a series of Ag-doped PbSe bulk materials by a melting-quenching process combined with a subsequent spark plasma sintering process, and systematically investigated the doping effects of Ag on the thermoelectric properties. Ag substitution in the Pb site does not introduce resonant levels near the valence band edge or detectable change in the density of state in the vicinity of the Fermi level, but moves the Fermi level down and increases the carrier concentration to a maximum value of ∼4.7 × 10 19 cm -3 which is still insufficient for heavily doped PbSe compounds. Nonetheless, the non-monotonic variation in carrier concentration with increasing Ag content indicates that Ag doping reaches the solution limit at ∼1.0% and the excessive Ag presumably acts as donors in the materials. Moreover, the large energy gap of the PbSe-based material wipes off significant 'roll-over' in the Seebeck coefficient at elevated temperatures which gives rise to high power factors, being comparable to p-type Te analogues. Consequently, the maximum ZT reaches ∼1.0 for the 1.5% Ag-doped samples with optimized carrier density, which is ∼70% improvement in comparison with an undoped sample and also superior to the commercialized p-type PbTe materials.

The electrical properties of a strongly disordered system based on lightly doped germanium compensated by disordered regions

International Nuclear Information System (INIS)

Evseev, V.A.; Konopleva, R.F.; Yuferev, A.A.

1976-01-01

A study was made of lightly doped (Nsub(Sb) approximately 10 15 cm -3 ) n-Ge, heavily compensated (K = Nsub(A)/N sub(D) approximately 1) by fast neutrons from a reactor. Irradiation is shown to produce, near n-p conversion (annealing has the same effect near p-n conversion), a random relief of electrostatic potential which is caused by the overlap of the space-charge regions surrounding disordered regions (DR). the random potential field results in a spatial 'bending' of the whole band spectrum of germanium, similar to the way it is observed in amorphous semiconductors because of their disorder. Experiments show the conduction in the DR overlap region to be of an activated nature, associated with the ejection of carriers to the corresponding 'percolation' levels. The activation energy of such conduction varies with the degree of compensation. The shift of the Fermi level depends on the degree of compensation here in a much more sensitive way than in the case of compensation by chemical impurities. The properties of Ge obtained by DR overlap and by compensation with chemical impurities are compared. A superlinear I-V characteristic producing the switching effect is observed in strong electric fields (E approximately 10 3 V cm -1 ). A suggestion is made that a study of disordered systems, based on lightly doped germanium which is compensated with DRs produced by high-energy particles, should both help to obtain new information on the parameters of the DRs proper and help to simulate the properties of the amorphous semiconductors. (author)

Performance of a carbon monoxide sensor based on zirconia-doped ceria

Directory of Open Access Journals (Sweden)

Noriya Izu

2016-06-01

Full Text Available Resistive-type carbon monoxide sensors were fabricated using zirconia-doped ceria, and their sensing properties were evaluated and compared with equivalent devices based on non-doped ceria. The response of both sensor types was found to increase with decreasing temperature, while the response at 450 °C of a sensor fired at 950 °C was greater than that of a sensor fired at 1100 °C. When fired at 950 °C, however, the response at 450 °C of a sensor created using zirconia-doped ceria was slightly less than that of a sensor constructed from non-doped ceria. Multivariate analysis confirmed that the response of both sensor types is proportional to the resistance raised to the power of about 0.5, and inversely proportional to the particle size raised to a power of about 0.8. The sensor response time can be considered almost the same regardless of whether zirconia doping is used or not.

Direct Current Sputter Epitaxy of Heavily Doped p+ Layer for Monocrystalline Si Solar Cells

Directory of Open Access Journals (Sweden)

Wenchang Yeh

2017-01-01

Full Text Available Sputter epitaxy of p+ layer for fabrication of Si solar cells (SCs was demonstrated. Hall carrier concentration of p+ layer was 2.6 × 1020 cm−3 owing to cosputtering of B with Si at low temperature, which had enabled heavy and shallow p+ dope layer. p+nn+ SCs were fabricated and influence of p+ and n+ layers was investigated. Internal quantum efficiency (IQE of p+nn+ SCs was 95% at visible light and was larger than 60% at ultraviolet (UV light when the p+ layer was thinner than 30 nm. At near infrared (NIR, extra increment on IQE was achieved by rear n+ back surface field (BSF layer with a thickness thinner than 100 nm.

Rectifying Properties of a Nitrogen/Boron-Doped Capped-Carbon-Nanotube-Based Molecular Junction

International Nuclear Information System (INIS)

Zhao Peng; Zhang Ying; Wang Pei-Ji; Zhang Zhong; Liu De-Sheng

2011-01-01

Based on the non-equilibrium Green's function method and first-principles density functional theory calculations, we investigate the electronic transport properties of a nitrogen/boron-doped capped-single-walled carbon-nanotube-based molecular junction. Obvious rectifying behavior is observed and it is strongly dependent on the doping site. The best rectifying performance can be carried out when the nitrogen/boron atom dopes at a carbon site in the second layer. Moreover, the rectifying performance can be further improved by adjusting the distance between the C 60 nanotube caps. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Highly efficient and concentration-insensitive organic light-emitting devices based on self-quenching-resistant orange–red iridium complex

Energy Technology Data Exchange (ETDEWEB)

Qi, Yige; Wang, Xu [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Li, Ming [College of Chemistry, Sichuan University, Chengdu 610064 (China); Lu, Zhiyun, E-mail: luzhiyun@scu.edu.cn [College of Chemistry, Sichuan University, Chengdu 610064 (China); Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

2014-11-15

Orange–red phosphorescent organic light-emitting devices (PHOLEDs) with high efficiency and concentration insensitivity based on a novel iridium complex, bis[2-(biphenyl-4-yl)benzothiazole-N,C{sup 2}′]iridium(III) (acetylacetonate) [(4Phbt){sub 2}Ir(acac)], were fabricated. With the heavily doped emissive layer (EML) of 4,4′-N,N′-dicarbazolylbiphenyl (CBP): (4Phbt){sub 2}Ir(acac) in a wide and easily controlled dopant concentration range from 12 wt% to 24 wt%, a maximum power efficiency of 29 lm/W and an external quantum efficiency of >16% of the PHOLEDs were obtained, implying the insensitivity of electroluminescence (EL) properties to doping concentration. Meanwhile, a maximum power efficiency of 5.0 lm/W was achieved from a non-doped device with neat (4Phbt){sub 2}Ir(acac) as the EML, indicating a superior property of self-quenching resistance. The mechanism of direct exciton formation, in which exciton-formation regions are distributed throughout the EML, is responsible for the significant alleviation of triplet–triplet annihilation and superior EL performance. - Highlights: • Highly efficient and concentration-insensitive PHOLEDs were obtained. • The high efficiency of non-doped PHOLEDs indicated a quenching-resistant property. • The independence of EL spectra on doping concentration was observed. • The heavily doped devices were dominated by mechanism of direct exciton formation.

Effects of Ba doping on physical properties of La-Ca-Mn-O thin films

CERN Document Server

Hong, N H; Sakai, J; Iwasaki, H

2003-01-01

Transport and magnetic properties of La-Ba-Ca-Mn-O thin films fabricated by the pulsed laser deposition technique had been investigated systematically to see the effects of substitution of the small atom Ca by Ba which is much bigger. The induced insulator-to-metal (IM) transition was obtained not only in compositions near 0.5 and 0.18 which are boundaries between metallic and insulating phases but also in the heavily doped region. In the region of x > 0.5, the Ba doping causes an anomalous response of the system to the magnetic field and a positive magnetoresistance was observed. Besides, our results concerning the vicinity of 0.5 imply the existence of phase separation. As for x < 0.5, the doping enhances remarkably the paramagnetism-ferromagnetism transition and the IM transition temperatures.

Antimony segregation in Ge and formation of n-type selectively doped Ge films in molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Yurasov, D. V., E-mail: Inquisitor@ipm.sci-nnov.ru; Antonov, A. V.; Drozdov, M. N.; Schmagin, V. B.; Novikov, A. V. [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhni Novgorod, 23 Prospekt Gagarina, 603950 Nizhny Novgorod (Russian Federation); Spirin, K. E. [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation)

2015-10-14

Antimony segregation in Ge(001) films grown by molecular beam epitaxy was studied. A quantitative dependence of the Sb segregation ratio in Ge on growth temperature was revealed experimentally and modeled theoretically taking into account both the terrace-mediated and step-edge-mediated segregation mechanisms. A nearly 5-orders-of-magnitude increase in the Sb segregation ratio in a relatively small temperature range of 180–350 °C was obtained, which allowed to form Ge:Sb doped layers with abrupt boundaries and high crystalline quality using the temperature switching method that was proposed earlier for Si-based structures. This technique was employed for fabrication of different kinds of n-type Ge structures which can be useful for practical applications like heavily doped n{sup +}-Ge films or δ-doped layers. Estimation of the doping profiles sharpness yielded the values of 2–5 nm per decade for the concentration gradient at the leading edge and 2–3 nm for the full-width-half-maximum of the Ge:Sb δ-layers. Electrical characterization of grown Ge:Sb structures revealed nearly full electrical activation of Sb atoms and the two-dimensional nature of charge carrier transport in δ-layers.

Stability and diffusion of interstitital and substitutional Mn in GaAs of different doping types

CERN Document Server

Pereira, LMC; Decoster, S; Correia, JG; Amorim, LM; da Silva, MR; Araújo, JP; Vantomme, A

2012-01-01

We report on the lattice location of Mn impurities (< 0.05%) in undoped (semi-insulating) and heavily $n$-type doped GaAs, by means of $\\beta^{-}$-emission channeling from the decay of $^{56}$Mn produced at ISOLDE/CERN. In addition to the majority substituting for Ga, we locate up to 30% of the Mn impurites on tetrahedral interstitial sites with As nearest neighbors. In line with the recently reported high thermal stability of interstitial Mn in heavily $p$-type doped GaAs [L. M. C. Pereira et al., Appl. Phys. Lett. 98, 201905 (2011)], the interstitial fraction is found to be stable up to 400$^{\\circ}$C, with an activation energy for diffusion of 1.7–2.3 eV. By varying the concentration of potentially trapping defects, without a measurable effect on the migration energy of the interstitial impurities, we conclude that the observed high thermal stability is characteristic of isolated interstitial Mn. Being difficult to reconcile with the general belief that interstitial Mn is the donor defect that out-dif...

Lifetime studies of self-activated photoluminescence in heavily silicon-doped GaAs

Science.gov (United States)

Sauncy, T.; Palsule, C. P.; Holtz, M.; Gangopadhyay, S.; Massie, S.

1996-01-01

We report results of a detailed temperature dependence study of photoluminescence lifetime and continuous emission properties in silicon-doped GaAs. The primary focus is on a defect-related emission at 1.269 eV (T=20 K). GaAs crystals were grown using molecular-beam epitaxy with most of the experiments conducted on a sample having a carrier concentration of 4.9×1018 cm-3. The intensity is seen to decrease above 100 K, with no corresponding decrease in the measured lifetime of 9.63+/-0.25 ns. The intensity decrease implies an activation energy of 19+/-2 meV, which is approximately one order of magnitude smaller than what was previously obtained for similar defects in Czochralski-grown GaAs with other dopants. We interpret our results in terms of a configuration coordinate model and obtain a more complete picture of the energy-level structure. The experiments indicate that the upper level in the recombination process is about 20 meV below the conduction-band continuum, with the lower state approximately 300 meV above the valence band. Our results are consistent with the identification of the corresponding defect complex microstructure as being a silicon-at-gallium substitution, weakly interacting with a gallium vacancy second-nearest neighbor, known as the Si-Y defect complex.

ZnO-based semiconductors studied by Raman spectroscopy. Semimagnetic alloying, doping, and nanostructures

Energy Technology Data Exchange (ETDEWEB)

Schumm, Marcel

2009-07-01

ZnO-based semiconductors were studied by Raman spectroscopy and complementary methods (e.g. XRD, EPS) with focus on semimagnetic alloying with transition metal ions, doping (especially p-type doping with nitrogen as acceptor), and nanostructures (especially wet-chemically synthesized nanoparticles). (orig.)

Evaluation of local free carrier concentrations in individual heavily-doped GaN:Si micro-rods by micro-Raman spectroscopy

Science.gov (United States)

Mohajerani, M. S.; Khachadorian, S.; Schimpke, T.; Nenstiel, C.; Hartmann, J.; Ledig, J.; Avramescu, A.; Strassburg, M.; Hoffmann, A.; Waag, A.

2016-02-01

Three-dimensional III-nitride micro-structures are being developed as a promising candidate for the future opto-electrical devices. In this study, we demonstrate a quick and straight-forward method to locally evaluate free-carrier concentrations and a crystalline quality in individual GaN:Si micro-rods. By employing micro-Raman mapping and analyzing lower frequency branch of A1(LO)- and E1(LO)-phonon-plasmon-coupled modes (LPP-), the free carrier concentrations are determined in axial and planar configurations, respectively. Due to a gradual doping profile along the micro-rods, a highly spatially resolved mapping on the sidewall is exploited to reconstruct free carrier concentration profile along the GaN:Si micro-rods. Despite remarkably high free carrier concentrations above 1 × 1020 cm-3, the micro-rods reveal an excellent crystalline quality, without a doping-induced stress.

Improve photovoltaic performance of titanium dioxide nanorods based dye-sensitized solar cells by Ca-doping

International Nuclear Information System (INIS)

Li, Weixin; Yang, Junyou; Zhang, Jiaqi; Gao, Sheng; Luo, Yubo; Liu, Ming

2014-01-01

Highlights: • TiO 2 nanorods doped with Ca ions were synthesized by one-step hydrothermal method. • The flat band edge of rutile TiO 2 shifted positively via Ca-doping. • The photoelectric conversion efficiency of dye-sensitized solar cells (DSSCs) based on TiO 2 electrode was much enhanced by Ca-doping. • A relatively high open circuit voltage was obtained by adopting Ca-doped TiO 2 nanorods electrode. - Abstract: Ca-doped TiO 2 nanorod arrays were prepared via the one-step hydrothermal method successfully, and the effect of Ca ions content on the photovoltaic conversion efficiency of dye-sensitized solar cells has been fully discussed in the paper. Although no obvious change on the microstructure and morphology was observed by field emission scanning electron microscope and transmission electron microscope for the Ca-doped samples, the results of X-ray diffraction and X-ray photoelectron spectroscopy confirmed that Ti 4+ was substituted with Ca 2+ successfully. UV–vis spectroscopy results revealed that the flat band edge shifted positively by Ca ions doping. The photovoltaic conversion efficiency of the dye-sensitized solar cells based on the 2 mol% Ca-doped TiO 2 electrode was 43% higher than that of the undoped one due to the less recombination possibility

Fabrication of Microcapsules for Dye-Doped Polymer-Dispersed Liquid Crystal-Based Smart Windows.

Science.gov (United States)

Kim, Mingyun; Park, Kyun Joo; Seok, Seunghwan; Ok, Jong Min; Jung, Hee-Tae; Choe, Jaehoon; Kim, Do Hyun

2015-08-19

A dye-doped polymer-dispersed liquid crystal (PDLC) is an attractive material for application in smart windows. Smart windows using a PDLC can be operated simply and have a high contrast ratio compared to those of other devices that employed photochromic or thermochromic material. However, in conventional dye-doped PDLC methods, dye contamination can cause problems and has a limited degree of commercialization of electric smart windows. Here, we report on an approach to resolve dye-related problems by encapsulating the dye in monodispersed capsules. By encapsulation, a fabricated dye-doped PDLC had a contrast ratio of >120 at 600 nm. This fabrication method of encapsulating the dye in a core-shell structured microcapsule in a dye-doped PDLC device provides a practical platform for dye-doped PDLC-based smart windows.

PCR-based detection of gene transfer vectors: application to gene doping surveillance.

Science.gov (United States)

Perez, Irene C; Le Guiner, Caroline; Ni, Weiyi; Lyles, Jennifer; Moullier, Philippe; Snyder, Richard O

2013-12-01

Athletes who illicitly use drugs to enhance their athletic performance are at risk of being banned from sports competitions. Consequently, some athletes may seek new doping methods that they expect to be capable of circumventing detection. With advances in gene transfer vector design and therapeutic gene transfer, and demonstrations of safety and therapeutic benefit in humans, there is an increased probability of the pursuit of gene doping by athletes. In anticipation of the potential for gene doping, assays have been established to directly detect complementary DNA of genes that are top candidates for use in doping, as well as vector control elements. The development of molecular assays that are capable of exposing gene doping in sports can serve as a deterrent and may also identify athletes who have illicitly used gene transfer for performance enhancement. PCR-based methods to detect foreign DNA with high reliability, sensitivity, and specificity include TaqMan real-time PCR, nested PCR, and internal threshold control PCR.

Illegal performance enhancing drugs and doping in sport: a picture-based brief implicit association test for measuring athletes’ attitudes

Science.gov (United States)

2014-01-01

Background Doping attitude is a key variable in predicting athletes’ intention to use forbidden performance enhancing drugs. Indirect reaction-time based attitude tests, such as the implicit association test, conceal the ultimate goal of measurement from the participant better than questionnaires. Indirect tests are especially useful when socially sensitive constructs such as attitudes towards doping need to be described. The present study serves the development and validation of a novel picture-based brief implicit association test (BIAT) for testing athletes’ attitudes towards doping in sport. It shall provide the basis for a transnationally compatible research instrument able to harmonize anti-doping research efforts. Method Following a known-group differences validation strategy, the doping attitudes of 43 athletes from bodybuilding (representative for a highly doping prone sport) and handball (as a contrast group) were compared using the picture-based doping-BIAT. The Performance Enhancement Attitude Scale (PEAS) was employed as a corresponding direct measure in order to additionally validate the results. Results As expected, in the group of bodybuilders, indirectly measured doping attitudes as tested with the picture-based doping-BIAT were significantly less negative (η2 = .11). The doping-BIAT and PEAS scores correlated significantly at r = .50 for bodybuilders, and not significantly at r = .36 for handball players. There was a low error rate (7%) and a satisfactory internal consistency (r tt  = .66) for the picture-based doping-BIAT. Conclusions The picture-based doping-BIAT constitutes a psychometrically tested method, ready to be adopted by the international research community. The test can be administered via the internet. All test material is available “open source”. The test might be implemented, for example, as a new effect-measure in the evaluation of prevention programs. PMID:24479865

Illegal performance enhancing drugs and doping in sport: a picture-based brief implicit association test for measuring athletes' attitudes.

Science.gov (United States)

Brand, Ralf; Heck, Philipp; Ziegler, Matthias

2014-01-30

Doping attitude is a key variable in predicting athletes' intention to use forbidden performance enhancing drugs. Indirect reaction-time based attitude tests, such as the implicit association test, conceal the ultimate goal of measurement from the participant better than questionnaires. Indirect tests are especially useful when socially sensitive constructs such as attitudes towards doping need to be described. The present study serves the development and validation of a novel picture-based brief implicit association test (BIAT) for testing athletes' attitudes towards doping in sport. It shall provide the basis for a transnationally compatible research instrument able to harmonize anti-doping research efforts. Following a known-group differences validation strategy, the doping attitudes of 43 athletes from bodybuilding (representative for a highly doping prone sport) and handball (as a contrast group) were compared using the picture-based doping-BIAT. The Performance Enhancement Attitude Scale (PEAS) was employed as a corresponding direct measure in order to additionally validate the results. As expected, in the group of bodybuilders, indirectly measured doping attitudes as tested with the picture-based doping-BIAT were significantly less negative (η2 = .11). The doping-BIAT and PEAS scores correlated significantly at r = .50 for bodybuilders, and not significantly at r = .36 for handball players. There was a low error rate (7%) and a satisfactory internal consistency (rtt = .66) for the picture-based doping-BIAT. The picture-based doping-BIAT constitutes a psychometrically tested method, ready to be adopted by the international research community. The test can be administered via the internet. All test material is available "open source". The test might be implemented, for example, as a new effect-measure in the evaluation of prevention programs.

Electrochemical bisphenol A sensor based on N-doped graphene sheets

International Nuclear Information System (INIS)

Fan Haixia; Li Yan; Wu Dan; Ma Hongmin; Mao Kexia; Fan Dawei; Du Bin; Li He; Wei Qin

2012-01-01

Highlights: ► N-doped graphene sheets have catalytic activity towards the BPA oxidation. ► The biosensor based on N-doped graphene sheets and chitosan. ► This method was proposed for determination of BPA utilizing N-doped graphene sheets. - Abstract: Bisphenol A (BPA), which could disrupt endocrine system and cause cancer, has been considered as an endocrine disruptor. Therefore, it is very important and necessary to develop a sensitive and selective method for detection of BPA. Herein, nitrogen-doped graphene sheets (N-GS) and chitosan (CS) were used to prepare electrochemical BPA sensor. Compared with graphene, N-GS has favorable electron transfer ability and electrocatalytic property, which could enhance the response signal towards BPA. CS also exhibits excellent film forming ability and improves the electrochemical behavior of N-GS modified electrode. The sensor exhibits a sensitive response to BPA in the range of 1.0 × 10 −8 –1.3 × 10 −6 mol L −1 with a low detection limit of 5.0 × 10 −9 mol L −1 under the optimal conditions. Finally, this proposed sensor was successfully employed to determine BPA in water samples with satisfactory results.

Preparation of nanometer sized Mn doped Zn based oxides powder for DMS applications

CSIR Research Space (South Africa)

Das, J

2009-01-01

Full Text Available In order to study the size dependent DMS (Diluted Magnetic Semiconductor) behavior of Mn doped ZnO, the authors have systematically prepared a series of nanosized green powder based on Mn doped ZnO (Zn 1-x Mn x O, where x=0.02 - 0.1) materials using...

Superconductivity and low temperature electrical transport in B-doped CVD nanocrystalline diamond

Directory of Open Access Journals (Sweden)

Milos Nesladek, Jiri J. Mares, Dominique Tromson, Christine Mer, Philippe Bergonzo, Pavel Hubik and Jozef Kristofik

2006-01-01

Full Text Available In this work, we report on superconductivity (SC found in thin B-doped nanocrystalline diamond films, prepared by the PE-CVD technique. The thickness of the films varies from about 100 to 400 nm, the films are grown on low-alkaline glass at substrate temperatures of about 500–700 °C. The SIMS measurements show that films can be heavily doped with boron in concentrations in the range of 3×1021 cm−3. The Raman spectra show Fano resonances, confirming the substitutional B-incorporation. The low temperature magnetotransport measurements reveal a positive magnetoresistance. The SC transition is observed at about Tc=1.66 K. A simple theory exploiting the concept of weak localization accounting for this transition is proposed.

Insight into destabilization mechanism of Mg-based hydrides interstitially co-doped with nonmetals: a DFT study

Science.gov (United States)

Wu, Zhen; Zhu, Luying; Yang, Fusheng; Zhang, Zaoxiao; Nyamsi, Serge N.

2018-04-01

Mg-based metal hydride is one of the most promising materials for hydrogen energy storage. However, the high thermal stability due to strong bonding effects between the atoms limits its practical application. In order to reduce the thermal stability, a method of doping double nonmetals into Mg-based system was proposed in this study. The density functional theory (DFT) calculation results showed that the thermal stabilities of both the B-N co-doped Mg-based alloy and its hydride are reduced compared with pure Mg-based system. The relative formation enthalpies of the alloy and its hydride are 0.323 and 0.595 eV atom-1, respectively. The values are much higher than those for either singly B- or N-doped Mg-based system. The more significant destabilization by doping double nonmetal elements than single element is mainly attributed to a dual effect in weakening Mg-Ni/NiH4 bonds, caused by criss-cross interactions between B-Ni and N-Mg bonds.

To dope or not to dope

DEFF Research Database (Denmark)

Overbye, Marie Birch; Knudsen, Mette Lykke; Pfister, Gertrud Ursula

2013-01-01

tAim: This study aims to examine the circumstances which athletes say affect their (hypothetical) consid-erations of whether to dope or not and explore the differences between athletes of different gender, ageand sport type.Methods: 645 elite athletes (mean age: 22.12; response rate: 43%) represe......tAim: This study aims to examine the circumstances which athletes say affect their (hypothetical) consid-erations of whether to dope or not and explore the differences between athletes of different gender, ageand sport type.Methods: 645 elite athletes (mean age: 22.12; response rate: 43......%) representing 40 sports completed aweb-based questionnaire. Participants were asked to imagine themselves in a situation in which theyhad to decide whether to dope or not to dope and then evaluate how different circumstances would affecttheir decisions.Results: Multiple circumstances had an effect on athletes......’ hypothetical decisions. The most effective deter-rents were related to legal and social sanctions, side-effects and moral considerations. Female athletesand younger athletes evaluated more reasons as deterrents than older, male athletes. When confrontedwith incentives to dope, the type of sport was often...

Hole transport in c-plane InGaN-based green laser diodes

Energy Technology Data Exchange (ETDEWEB)

Cheng, Yang; Liu, Jianping, E-mail: jpliu2010@sinano.ac.cn; Tian, Aiqin; Zhang, Feng; Feng, Meixin; Hu, Weiwei; Zhang, Shuming; Ikeda, Masao; Li, Deyao; Zhang, Liqun; Yang, Hui [Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); School of Nano Technology and Nano Bionics, University of Science and Technology of China, Suzhou 215123 (China)

2016-08-29

Hole transport in c-plane InGaN-based green laser diodes (LDs) has been investigated by both simulations and experiments. It is found that holes can overflow from the green double quantum wells (DQWs) at high current density, which reduces carrier injection efficiency of c-plane InGaN-based green LDs. A heavily silicon-doped layer right below the green DQWs can effectively suppress hole overflow from the green DQWs.

Tunneling Negative Magnetoresistance via δ Doping in a Graphene-Based Magnetic Tunnel Junction

International Nuclear Information System (INIS)

Yuan Jian-Hui; Chen Ni; Mo Hua; Zhang Yan; Zhang Zhi-Hai

2016-01-01

We investigate the tunneling magnetoresistance via δ doping in a graphene-based magnetic tunnel junction in detail. It is found that the transmission probability and the conductance oscillates with the position and the aptitude of the δ doping. Also, both the transmission probability and the conductance at the parallel configuration are suppressed by the magnetic field more obviously than that at the antiparallel configuration, which implies a large negative magnetoresistance for this device. The results show that the negative magnetoresistance of over 300% at B = 1.0 T is observed by choosing suitable doped parameters, and the temperature plays an important role in the magnetoresistance. Thus it is possible to open a way to effectively manipulate the magnetoresistance devices, and to make a type of magnetoresistance device by controlling the structural parameter of the δ doping. (paper)

Reconceptualising the Gender of Fitness Doping: Performing and Negotiating Masculinity through Drug-Use Practices

Directory of Open Access Journals (Sweden)

Jesper Andreasson

2015-08-01

Full Text Available This article analyses self-portrayals and gender constructions among Swedish male bodybuilders who are engaged in fitness doping. The empirical material comes from a larger ethnographic investigation into gym culture. The results show that there is a strong propensity to conform with particular gender fantasies that rests heavily on a binary understanding of gendered, doped bodies. However, this storyline does not apprehend the entire self-presentation of the analysed drug users. Negotiations and inclusive subversions of traditional gender norms are also expressed. For example, the narratives show how the use of performance-enhancing substances makes it possible for (heterosexual men to approach, touch and express feelings of desire towards other men and their bodies. As such, this practice can be viewed as a contestation of hegemonic gender values, in which masculinity and fitness doping are detached from a quite heterosexist understanding, and turned into a symbolic world of homoerotic pleasure.

Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires.

Science.gov (United States)

Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T; Martinez, Julio A

2016-01-08

The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. Selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

Fitness Doping and Body Management

DEFF Research Database (Denmark)

Thualagant, Nicole

This PhD thesis examines in a first paper the conceptualization of fitness doping and its current limitations. Based on a review of studies on bodywork and fitness doping it is emphasised that the definition of doping does not provide insights into bodywork of both men and women. Moreover......, it is argued that the social and a cultural context are missing in the many epidemiological studies on the prevalence of doping. The second paper explores the difficulties of implementing an anti-doping policy, which was originally formulated in an elite sport context, in a fitness context and more......-based fitness centres. Based on a survey in ten Danish club-based fitness centres and on narratives from semi-structured interviews, it is highlighted that the objectives of bodywork differ according to the users’ age and gender. Two different ways of investing in the body are explored in the paper, namely...

Experimental evidence for importance of Hund's exchange interaction for incoherence of charge carriers in iron-based superconductors

Science.gov (United States)

Fink, J.; Rienks, E. D. L.; Thirupathaiah, S.; Nayak, J.; van Roekeghem, A.; Biermann, S.; Wolf, T.; Adelmann, P.; Jeevan, H. S.; Gegenwart, P.; Wurmehl, S.; Felser, C.; Büchner, B.

2017-04-01

Angle-resolved photoemission spectroscopy is used to study the scattering rates of charge carriers from the hole pockets near Γ in the iron-based high-Tc hole-doped superconductors KxBa1 -xFe2As2 , x =0.4 , and KxEu1 -xFe2As2 , x =0.55 , and the electron-doped compound Ba (Fe1-xCox) 2As2 , x =0.075 . The scattering rate for any given band is found to depend linearly on the energy, indicating a non-Fermi-liquid regime. The scattering rates in the hole-doped compound are considerably higher than those in the electron-doped compounds. In the hole-doped systems the scattering rate of the charge carriers of the inner hole pocket is about three times higher than the binding energy, indicating that the spectral weight is heavily incoherent. The strength of the scattering rates and the difference between electron- and hole-doped compounds signals the importance of Hund's exchange coupling for correlation effects in these iron-based high-Tc superconductors. The experimental results are in qualitative agreement with theoretical calculations in the framework of combined density functional dynamical mean-field theory.

Excitonic optical bistability in n-type doped semiconductors

International Nuclear Information System (INIS)

Nguyen Ba An; Le Thi Cat Tuong

1991-07-01

A resonant monochromatic pump laser generates coherent excitons in an n-type doped semiconductor. Both exciton-exciton and exciton-donor interactions come into play. The former interaction can give rise to the appearance of optical bistability which is heavily influenced by the latter one. When optical bistability occurs at a fixed laser frequency both its holding intensity and hysteresis loop size are shown to decrease with increasing donor concentration. Two possibilities are suggested for experimentally determining one of the two parameters of the system - the exciton-donor coupling constant and the donor concentration, if the other parameter is known beforehand. (author). 36 refs, 2 figs

Two-band analysis of hole mobility and Hall factor for heavily carbon-doped p-type GaAs

Science.gov (United States)

Kim, B. W.; Majerfeld, A.

1996-02-01

We solve a pair of Boltzmann transport equations based on an interacting two-isotropic-band model in a general way first to get transport parameters corresponding to the relaxation time. We present a simple method to calculate effective relaxation times, separately for each band, which compensate for the inherent deficiencies in using the relaxation time concept for polar optical-phonon scattering. Formulas for calculating momentum relaxation times in the two-band model are presented for all the major scattering mechanisms of p-type GaAs for simple, practical mobility calculations. In the newly proposed theoretical framework, first-principles calculations for the Hall mobility and Hall factor of p-type GaAs at room temperature are carried out with no adjustable parameters in order to obtain direct comparisons between the theory and recently available experimental results. In the calculations, the light-hole-band nonparabolicity is taken into account on the average by the use of energy-dependent effective mass obtained from the kṡp method and valence-band anisotropy is taken partly into account by the use the Wiley's overlap function.. The calculated Hall mobilities show a good agreement with our experimental data for carbon-doped p-GaAs samples in the range of degenerate hole densities. The calculated Hall factors show rH=1.25-1.75 over hole densities of 2×1017-1×1020 cm-3.

Theory of photoresistors on the base of trapezoidal δ-doped superlattices

International Nuclear Information System (INIS)

Osipov, V.V.; Selyakov, A.Yu.; Foygel, M.

1999-01-01

A theory of far infrared photoresistors that is based on trapezoidal δ-doped superlattices (TSL) has been developed. It is shown that photoconductivity of TSL in monopolar despite the interband absorption and generation of electron - hole pairs. In this way, photoelectric gain and responsivity of TSL photoresistor can reach gigantic values. It is established that tunneling-radiative lifetime of electron-hole pairs determines the kinetics of photoconductivity decay. It is shown that a surprising effect takes place: voltage responsivity does not depend virtually on lifetime of nonequilibrium carriers and on the doping level of TSL photoresistor and can reach gigantic values [ru

Doping profile measurements in silicon using terahertz time domain spectroscopy (THz-TDS) via electrochemical anodic oxidation

Science.gov (United States)

Tulsyan, Gaurav

Doping profiles are engineered to manipulate device properties and to determine electrical performances of microelectronic devices frequently. To support engineering studies afterward, essential information is usually required from physically characterized doping profiles. Secondary Ion Mass Spectrometry (SIMS), Spreading Resistance Profiling (SRP) and Electrochemical Capacitance Voltage (ECV) profiling are standard techniques for now to map profile. SIMS yields a chemical doping profile via ion sputtering process and owns a better resolution, whereas ECV and SRP produce an electrical doping profile detecting free carriers in microelectronic devices. The major difference between electrical and chemical doping profiles is at heavily doped regions greater than 1020 atoms/cm3. At the profile region over the solubility limit, inactive dopants induce a flat plateau and detected by electrical measurements only. Destructive techniques are usually designed as stand-alone systems to study impurities. For an in-situ process control purpose, non-contact methods, such as ellipsometry and non-contact capacitance voltage (CV) techniques are current under development. In this theses work, terahertz time domain spectroscopy (THz-TDS) is utilized to achieve electrical doping profile in both destructive and non-contact manners. In recent years the Terahertz group at Rochester Institute Technology developed several techniques that use terahertz pulses to non-destructively map doping profiles. In this thesis, we study a destructive but potentially higher resolution version of the terahertz based approach to map the profile of activated dopants and augment the non-destructive approaches already developed. The basic idea of the profile mapping approach developed in this MS thesis is to anodize, and thus oxidize to silicon dioxide, thin layers (down to below 10 nm) of the wafer with the doping profile to be mapped. Since the dopants atoms and any free carriers in the silicon oxide thin

Doped graphene supercapacitors

Science.gov (United States)

Ashok Kumar, Nanjundan; Baek, Jong-Beom

2015-12-01

Heteroatom-doped graphitic frameworks have received great attention in energy research, since doping endows graphitic structures with a wide spectrum of properties, especially critical for electrochemical supercapacitors, which tend to complement or compete with the current lithium-ion battery technology/devices. This article reviews the latest developments in the chemical modification/doping strategies of graphene and highlights the versatility of such heteroatom-doped graphitic structures. Their role as supercapacitor electrodes is discussed in detail. This review is specifically focused on the concept of material synthesis, techniques for electrode fabrication and metrics of performance, predominantly covering the last four years. Challenges and insights into the future research and perspectives on the development of novel electrode architectures for electrochemical supercapacitors based on doped graphene are also discussed.

Doped graphene supercapacitors

International Nuclear Information System (INIS)

Kumar, Nanjundan Ashok; Baek, Jong-Beom

2015-01-01

Heteroatom-doped graphitic frameworks have received great attention in energy research, since doping endows graphitic structures with a wide spectrum of properties, especially critical for electrochemical supercapacitors, which tend to complement or compete with the current lithium-ion battery technology/devices. This article reviews the latest developments in the chemical modification/doping strategies of graphene and highlights the versatility of such heteroatom-doped graphitic structures. Their role as supercapacitor electrodes is discussed in detail. This review is specifically focused on the concept of material synthesis, techniques for electrode fabrication and metrics of performance, predominantly covering the last four years. Challenges and insights into the future research and perspectives on the development of novel electrode architectures for electrochemical supercapacitors based on doped graphene are also discussed. (topical review)

Design analysis of doped-silicon surface plasmon resonance immunosensors in mid-infrared range.

Science.gov (United States)

DiPippo, William; Lee, Bong Jae; Park, Keunhan

2010-08-30

This paper reports the design analysis of a microfabricatable mid-infrared (mid-IR) surface plasmon resonance (SPR) sensor platform. The proposed platform has periodic heavily doped profiles implanted into intrinsic silicon and a thin gold layer deposited on top, making a physically flat grating SPR coupler. A rigorous coupled-wave analysis was conducted to prove the design feasibility, characterize the sensor's performance, and determine geometric parameters of the heavily doped profiles. Finite element analysis (FEA) was also employed to compute the electromagnetic field distributions at the plasmon resonance. Obtained results reveal that the proposed structure can excite the SPR on the normal incidence of mid-IR light, resulting in a large probing depth that will facilitate the study of larger analytes. Furthermore, the whole structure can be microfabricated with well-established batch protocols, providing tunability in the SPR excitation wavelength for specific biosensing needs with a low manufacturing cost. When the SPR sensor is to be used in a Fourier-transform infrared (FTIR) spectroscopy platform, its detection sensitivity and limit of detection are estimated to be 3022 nm/RIU and ~70 pg/mm(2), respectively, at a sample layer thickness of 100 nm. The design analysis performed in the present study will allow the fabrication of a tunable, disposable mid-IR SPR sensor that combines advantages of conventional prism and metallic grating SPR sensors.

Temperature and Pressure Sensors Based on Spin-Allowed Broadband Luminescence of Doped Orthorhombic Perovskite Structures

Science.gov (United States)

Eldridge, Jeffrey I. (Inventor); Chambers, Matthew D. (Inventor)

2014-01-01

Systems and methods that are capable of measuring pressure or temperature based on luminescence are discussed herein. These systems and methods are based on spin-allowed broadband luminescence of sensors with orthorhombic perovskite structures of rare earth aluminates doped with chromium or similar transition metals, such as chromium-doped gadolinium aluminate. Luminescence from these sensors can be measured to determine at least one of temperature or pressure, based on either the intense luminescence of these sensors, even at high temperatures, or low temperature techniques discussed herein.

The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes

Energy Technology Data Exchange (ETDEWEB)

Chen, P.; Zhao, D. G., E-mail: dgzhao@red.semi.ac.cn; Jiang, D. S.; Zhu, J. J.; Liu, Z. S.; Yang, J.; Li, X.; Le, L. C.; He, X. G.; Liu, W.; Li, X. J.; Liang, F. [State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Zhang, B. S.; Yang, H. [Key Laboratory of Nano-devices and Applications of CAS, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Zhang, Y. T.; Du, G. T. [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023 (China)

2016-03-15

In order to reduce the internal optical loss of InGaN laser diodes, an unintentionally doped GaN (u-GaN) interlayer is inserted between InGaN/GaN multiple quantum well active region and Al{sub 0.2}Ga{sub 0.8}N electron blocking layer. The thickness design of u-GaN interlayer matching up with background doping level for improving laser performance is studied. It is found that a suitably chosen u-GaN interlayer can well modulate the optical absorption loss and optical confinement factor. However, if the value of background doping concentration of u-GaN interlayer is too large, the output light power may decrease. The analysis of energy band diagram of a LD structure with 100 nm u-GaN interlayer shows that the width of n-side depletion region decreases when the background concentration increases, and may become even too small to cover whole MQW, resulting in a serious decrease of the output light power. It means that a suitable interlayer thickness design matching with the background doping level of u-GaN interlayer is significant for InGaN-based laser diodes.

The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes

Directory of Open Access Journals (Sweden)

P. Chen

2016-03-01

Full Text Available In order to reduce the internal optical loss of InGaN laser diodes, an unintentionally doped GaN (u-GaN interlayer is inserted between InGaN/GaN multiple quantum well active region and Al0.2Ga0.8N electron blocking layer. The thickness design of u-GaN interlayer matching up with background doping level for improving laser performance is studied. It is found that a suitably chosen u-GaN interlayer can well modulate the optical absorption loss and optical confinement factor. However, if the value of background doping concentration of u-GaN interlayer is too large, the output light power may decrease. The analysis of energy band diagram of a LD structure with 100 nm u-GaN interlayer shows that the width of n-side depletion region decreases when the background concentration increases, and may become even too small to cover whole MQW, resulting in a serious decrease of the output light power. It means that a suitable interlayer thickness design matching with the background doping level of u-GaN interlayer is significant for InGaN-based laser diodes.

Resonant Raman and FTIR spectra of carbon doped GaN

Science.gov (United States)

Ito, S.; Kobayashi, H.; Araki, K.; Suzuki, K.; Sawaki, N.; Yamashita, K.; Honda, Y.; Amano, H.

2015-03-01

Intentionally carbon (C) doped (0 0 0 1)GaN was grown using C2H2 on a sapphire substrate by metalorganic vapor phase epitaxy. Optical spectra of the heavily doped samples were investigated at room temperature. In Raman spectra excited by the 325 nm line of a He-Cd laser, multiple LO phonon scattering signals up to 7th order were observed, and the A1(LO) phonon energy was determined to be 737.5 cm-1 (91.45 meV). In infrared reflectance spectra, on the other hand, a local vibration mode was found at 777.5 cm-1, which is attributed to a Ga-C bond in the GaN matrix suggesting that the C sits on an N site (CN). In spite of the strong suggestion of CN, the samples did not show p-type conduction. Possible origin of the carrier compensation is discussed in relation to the enhancement of defect related yellow luminescence in the photoluminescence spectra.

Stark shift of impurity doped quantum dots: Role of noise

Science.gov (United States)

Arif, Sk. Md.; Bera, Aindrila; Ghosh, Anuja; Ghosh, Manas

2018-02-01

Present study makes a punctilious investigation of the profiles of Stark shift (SS) of doped GaAs quantum dot (QD) under the supervision of Gaussian white noise. A few physical parameters have been varied and the consequent variations in the SS profiles have been monitored. The said physical parameters comprise of magnetic field, confinement potential, dopant location, dopant potential, noise strength, aluminium concentration (only for AlxGa1-x As alloy QD), position-dependent effective mass (PDEM), position-dependent dielectric screening function (PDDSF), anisotropy, hydrostatic pressure (HP) and temperature. The SS profiles unfurl interesting features that heavily depend upon the particular physical quantity concerned, presence/absence of noise and the manner (additive/multiplicative) noise enters the system. The study highlights feasible means of maximizing SS of doped QD in presence of noise by suitable adjustment of several control parameters. The study deems importance in view of technological applications of QD devices where noise plays some prominent role.

Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

Science.gov (United States)

Okumura, Hironori; Martin, Denis; Grandjean, Nicolas

2016-12-01

Mg-doped GaN with a net acceptor concentration (NA-ND) in the high 1019 cm-3 range was grown using ammonia molecular-beam epitaxy. Electrical properties of NiO contact on this heavily doped p-type GaN were investigated. A potential-barrier height of 0.24 eV was extracted from the relationship between NA-ND and the specific contact resistivity (ρc). We found that there is an optimum NA-ND value of 5 × 1019 cm-3 for which ρc is as low as 2 × 10-5 Ω cm2. This low ρc is ascribed to hole tunneling through the potential barrier at the NiO/p+-GaN interface, which is well accounted for by the field-emission model.

Boron doping induced thermal conductivity enhancement of water-based 3C-Si(B)C nanofluids.

Science.gov (United States)

Li, Bin; Jiang, Peng; Zhai, Famin; Chen, Junhong; Bei, Guo-Ping; Hou, Xinmei; Chou, Kuo-Chih

2018-06-04

In this paper, the fabrication and thermal conductivity of water-based nanofluids using boron (B) doped SiC as dispersions are reported. Doping B into β-SiC phase leads to the shrinkage of SiC lattice due to the substitution of Si atoms (radius: 0.134 nm) by smaller B atoms (radius: 0.095 nm). The presence of B in SiC phase also promotes crystallization and grain growth of obtained particles. The tailored crystal structure and morphology of B doped SiC nanoparticles are beneficial for the thermal conductivity improvement of the nanofluids by using them as dispersions. Serving B doped SiC nanoparticles as dispersions for nanofluids, a remarkable improvement of the stability was achieved in SiC-B6 nanofluid at pH 11 by means of the Zeta potential measurement. Dispersing B doped SiC nanoparticles in water based fluids, the thermal conductivity of the as prepared nanofluids containing only 0.3 vol. % SiC-B6 nanoparticles is remarkably raised up to 39.3 % at 30 °C compared to the base fluids and is further enhanced with the increased temperature. The main reasons for the improvement of thermal conductivity of SiC-B6 nanofluids are more stable dispersion and intensive charge ions vibration around the surface of nanoparticles as well as the enhanced thermal conductivity of the SiC-B dispersions. © 2018 IOP Publishing Ltd.

Synthesis and Doping of Silicon Nanocrystals for Versatile Nanocrystal Inks

Science.gov (United States)

Kramer, Nicolaas Johannes

atmospheric pressures necessitates high plasma densities to reach temperatures required for crystallization of nanoparticles. Using experimentally determined plasma properties from the literature, the model estimates the nanoparticle temperature that is achieved during synthesis at atmospheric pressures. It was found that temperatures well above those required for crystallization can be achieved. Now that the synthesis of nanocrystals is understood, the second half of this thesis will focus on doping of the nanocrystals. The doping of semiconductor nanocrystals, which is vital for the optimization of nanocrystal-based devices, remains a challenge. Gas phase plasma approaches have been very successful in incorporating dopant atoms into nanocrystals by simply adding a dopant precursor during synthesis. However, little is known about the electronic activation of these dopants. This was investigated with field-effect transistor measurements using doped silicon nanocrystal films. It was found that, analogous to bulk silicon, boron and phosphorous electronically dope silicon nanocrystals. However, the dopant activation efficiency remains low as a result of self-purification of the dopants to the nanocrystal surface. Next the plasmonic properties of heavily doped silicon nanocrystals was explored. While the synthesis method was identical, the plasmonic behavior of phosphorus-doped and boron-doped nanocrystals was found the be significantly different. Phosphorus-doped nanocrystals exhibit a plasmon resonance immediately after synthesis, while boron-doped nanocrystals require a post-synthesis annealing or oxidation treatment. This is a result of the difference in dopant location. Phosphorus is more likely to be incorporated into the core of the nanocrystal, while the majority of boron is placed on the surface of the nanocrystal. The oxidized boron-doped particles exhibit stable plasmonic properties, and therefore this allows for the production of air-stable silicon-based plasmonic

Large capacitance enhancement induced by metal-doping in graphene-based supercapacitors: a first-principles-based assessment.

Science.gov (United States)

Paek, Eunsu; Pak, Alexander J; Hwang, Gyeong S

2014-08-13

Chemically doped graphene-based materials have recently been explored as a means to improve the performance of supercapacitors. In this work, we investigate the effects of 3d transition metals bound to vacancy sites in graphene with [BMIM][PF6] ionic liquid on the interfacial capacitance; these results are compared to the pristine graphene case with particular attention to the relative contributions of the quantum and electric double layer capacitances. Our study highlights that the presence of metal-vacancy complexes significantly increases the availability of electronic states near the charge neutrality point, thereby enhancing the quantum capacitance drastically. In addition, the use of metal-doped graphene electrodes is found to only marginally influence the microstructure and capacitance of the electric double layer. Our findings indicate that metal-doping of graphene-like electrodes can be a promising route toward increasing the interfacial capacitance of electrochemical double layer capacitors, primarily by enhancing the quantum capacitance.

Strong coupling between bi-dimensional electron gas and nitrogen localized states in heavily doped GaAs1-xN x structures

International Nuclear Information System (INIS)

Hamdouni, A.; Bousbih, F.; Ben Bouzid, S.; Oueslati, M.; Chtourou, R.; Harmand, J.C.

2005-01-01

We report a low-temperature photoluminescence spectra (LTPL) of GaAs 1-x N x layers and two-dimension electron gas (2DEG) GaAs 1-x N x /AlGaAs modulation doped heterostructure grown on GaAs substrates by molecular beam epitaxy (MBE) with low nitrogen content [N] = 2 x 10 18 cm -3 . At low temperature, PL spectra of GaAs 1-x N x layers are governed by several features associate to the excitons bound to nitrogen complexes, these features disappear in (2DEG) GaAs 1-x N x /AlGaAs modulation doped heterostructure and the PL peak energy decrease with the laser power excitation. This effect is explained by the strongly coupling of the (2DEG) fundamental state with the nitrogen localized states. An activated energy of about 55 meV is deduced by photoluminescence measurements in the 10-300 K range for a laser power excitation P = 6 W/cm 2

Wet chemical treatment of boron doped emitters on n-type (1 0 0) c-Si prior to amorphous silicon passivation

Energy Technology Data Exchange (ETDEWEB)

Meddeb, H., E-mail: hosny.meddeb@gmail.com [KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Research and Technology Center of Energy, Photovoltaic Department, Borj-Cedria Science and Technology Park, BP 95, 2050 (Tunisia); University of Carthage, Faculty of Sciences of Bizerta (Tunisia); Bearda, T.; Recaman Payo, M.; Abdelwahab, I. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Abdulraheem, Y. [Electrical Engineering Department, College of Engineering & Petroleum, Kuwait University, P.O. Box 5969, 13060 Safat (Kuwait); Ezzaouia, H. [Research and Technology Center of Energy, Photovoltaic Department, Borj-Cedria Science and Technology Park, BP 95, 2050 (Tunisia); Gordon, I.; Szlufcik, J. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Poortmans, J. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Department of Electrical Engineering (ESAT), K.U. Leuven, 3001 Leuven (Belgium); Faculty of Sciences, University of Hasselt, Martelarenlaan 42, 3500 Hasselt (Belgium)

2015-02-15

Highlights: • The influence of the cleaning process using different HF-based cleaning on the amorphous silicon passivation of homojunction boron doped emitters is analyzed. • The effect of boron doping level on surface characteristics after wet chemical cleaning: For heavily doped surfaces, the reduction in contact angle was less pronounced, which proves that such surfaces are more resistant to oxide formation and remain hydrophobic for a longer time. In the case of low HF concentration, XPS measurements show higher oxygen concentrations for samples with higher doping level, probably due to the incomplete removal of the native oxide. • Higher effective lifetime is achieved at lower doping for all considered different chemical pre-treatments. • A post-deposition annealing improves the passivation level yielding emitter saturation currents determined by Auger recombination in the order of 70 fA/cm{sup 2} and below. • The dominance of Auger recombination over other type of B-induced defects on lifetime quality in the case of our p+ emitter. - Abstract: The influence of the cleaning process on the amorphous silicon passivation of homojunction emitters is investigated. A significant variation in the passivation quality following different cleaning sequences is not observed, even though differences in cleaning performance are evident. These results point out the effectiveness of our cleaning treatment and provide a hydrogen termination for intrinsic amorphous silicon passivation. A post-deposition treatment improves the passivation level yielding emitter saturation currents determined by Auger recombination in the order of 70 fA/cm{sup 2} and below.

Functionalization of silicon-doped single walled carbon nanotubes at the doping site: An ab initio study

International Nuclear Information System (INIS)

Song Chen; Xia Yueyuan; Zhao Mingwen; Liu Xiangdong; Li Feng; Huang Boda; Zhang Hongyu; Zhang Bingyun

2006-01-01

We performed ab initio calculations on the cytosine-functionalized silicon-doped single walled carbon nanotubes (SWNT). The results show that silicon substitutional doping to SWNT can dramatically change the atomic and electronic structures of the SWNT. And more importantly, it may provide an efficient pathway for further sidewall functionalization to synthesize more complicated SWNT based complex materials, for example, our previously proposed base-functionalized SWNTs, because the doping silicon atom can improve the reaction activity of the tube at the doping site due to its preference to form sp3 hybridization bonding

Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation

Science.gov (United States)

Duffy, Ray; Ricchio, Alessio; Murphy, Ruaidhrí; Maxwell, Graeme; Murphy, Richard; Piaszenski, Guido; Petkov, Nikolay; Hydes, Alan; O'Connell, Dan; Lyons, Colin; Kennedy, Noel; Sheehan, Brendan; Schmidt, Michael; Crupi, Felice; Holmes, Justin D.; Hurley, Paul K.; Connolly, James; Hatem, Chris; Long, Brenda

2018-03-01

The advent of high surface-to-volume ratio devices has necessitated a revised approach to parameter extraction and process evaluation in field-effect transistor technologies. In this work, active doping concentrations are extracted from the electrical analysis of Si nanowire devices with high surface-to-volume ratios. Nanowire resistance and Si resistivity are extracted, by first extracting and subtracting out the contact resistance. Resistivity (ρ) is selected as the benchmark parameter to compare different doping processes with each other. The impacts of nanowire diameter scaling to 10 nm and of nanowire spacing scaling to resistivity and higher dopant activation, with dependencies on the nanowire width greater than on nanowire spacing. Limitations in ADP P monolayer doping with a SiO2 cap are due to the difficulties in dopant incorporation, as it is based on in-diffusion, and P atoms must overcome a potential barrier on the Si surface.

Modeling of Mid-IR Amplifier Based on an Erbium-Doped Chalcogenide Microsphere

Directory of Open Access Journals (Sweden)

P. Bia

2012-01-01

Full Text Available An optical amplifier based on a tapered fiber and an Er3+-doped chalcogenide microsphere is designed and optimized. A dedicated 3D numerical model, which exploits the coupled mode theory and the rate equations, is used. The main transitions among the erbium energy levels, the amplified spontaneous emission, and the most important secondary transitions pertaining to the ion-ion interactions have been considered. Both the pump and signal beams are efficiently injected and obtained by a suitable design of the taper angle and the fiber-microsphere gap. Moreover, a good overlapping between the optical signals and the rare-earth-doped region is also obtained. In order to evaluate the amplifier performance in reduced computational time, the doped area is partitioned in sectors. The obtained simulation results highlight that a high-efficiency midinfrared amplification can be obtained by using a quite small microsphere.

Versatile and Tunable Transparent Conducting Electrodes Based on Doped Graphene

KAUST Repository

Mansour, Ahmed

2016-01-01

Herein, we explore non-covalent doping routes of CVD FLG, such as surface doping, intercalation and combination thereof, through in-depth and systematic characterization of the electrical transport properties and energy levels shifts. The intercalation of FLG with Br2 and FeCl3 is demonstrated, showing the highest improvements of the figure of merit of TCEs of any doping scheme, which results from up to a five-fold increase in conductivity while maintaining the transmittance within 3% of that for the pristine value. Importantly the intercalation yields TCEs that are air-stable, due to encapsulation of the intercalant in the bulk of FLG. Surface doping with novel solution-processed metal-organic molecular species (n- and p-type) is demonstrated with an unprecedented range of work function modulation, resulting from electron transfer and the formation of molecular surface dipoles. However, the conductivity increases compared modestly to intercalation as the electron transfer is limited to the uppermost graphene layers. Finally, a novel and universal multi-modal doping strategy is developed, thanks to the unique platform offered by FLG, where surface and intercalation doping are combined to mutually achieve high conductivity with an extended tunability of the work function. This work presents doped-FLG as a prospective and versatile candidate among emerging TCEs, given the need for efficient and stable doping routes capable of controllably tuning its properties to meet the criteria of a broad range of applications.

Ion-channeling analysis of As relocation in heavily doped Si:As irradiated with high-energy ions

International Nuclear Information System (INIS)

Lulli, G.; Albertazzi, E.; Bianconi, M.; Ferri, M.

2003-01-01

Silicon on insulator layers doped with 8x10 20 As cm -3 and thermally equilibrated at 1100 deg. C, have been irradiated with 2 MeV Si + ions. Rutherford backscattering-channeling analysis shows an increase in As disorder upon irradiation significantly larger than the increase in Si disorder, while electrical measurements show a large decrease in electrical activation. Monte Carlo simulation of channeling angular scans suggests that the enhanced As disorder effect is due to the preferential relocation of dopant atoms slightly displaced from lattice sites, which appear the main reason responsible for the electrical deactivation in the unirradiated sample and are believed to be in the form of As-vacancy clusters. Upon 600 deg. C 15 s annealing, the As atoms randomly relocated by ion irradiation almost completely recover their original configuration, probably capturing vacancies and forming, again, the complexes dissociated by ion irradiation

Activation and deactivation in heavily boron-doped silicon

International Nuclear Information System (INIS)

Yoo, Seung-Han; Ro, Jae-Sang

2003-01-01

A shallow p + /n junction was formed using a ultra-low-energy (ULE) implanter. Activation by rapid thermal annealing (RTA) exhibited both solid phase epitaxy, in which the sheet resistance dropped rapidly, and reverse annealing, in a manner similar to furnace annealing. The temperature ranges in which these phenomena were observed, however, were higher in the case of RTA processing than they were in the case of furnace annealing due to the low thermal budget associated with the former. Deactivation phenomena were investigated for the shallow source/drain junction based on measurements of the post-annealing time and temperature following the RTA treatments. We found that the deactivation kinetics was divided into two regions. In the first regions, the rate of deactivation increased exponentially with the annealing temperature up to 850 .deg. C. In the second regions, it was found to decrease linearly with the annealing temperature beyond 850 .deg. C. We believe that the first region is kinetically limited while the second is thermodynamically limited. We also observed 'transient enhanced deactivation' an anomalous increase in the sheet resistance during the early stage of annealing at temperatures higher than 800 .deg. C. The activation energy for transient enhanced deactivation was measured to be in the 1.75 ∼ 1.87 eV range while that for normal deactivation was found to be between 3.49 and 3.69 eV.

Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

International Nuclear Information System (INIS)

Song, Erdong; Martinez, Julio A; Li, Qiming; Pan, Wei; Wang, George T; Swartzentruber, Brian

2016-01-01

The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. Selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power. (paper)

Enhanced n-Doping Efficiency of a Naphthalenediimide-Based Copolymer through Polar Side Chains for Organic Thermoelectrics

KAUST Repository

Kiefer, David

2018-01-05

N-doping of conjugated polymers either requires a high dopant fraction or yields a low electrical conductivity because of their poor compatibility with molecular dopants. We explore n-doping of the polar naphthalenediimide–bithiophene copolymer p(gNDI-gT2) that carries oligoethylene glycol-based side chains and show that the polymer displays superior miscibility with the benzimidazole–dimethylbenzenamine-based n-dopant N-DMBI. The good compatibility of p(gNDI-gT2) and N-DMBI results in a relatively high doping efficiency of 13% for n-dopants, which leads to a high electrical conductivity of more than 10–1 S cm–1 for a dopant concentration of only 10 mol % when measured in an inert atmosphere. We find that the doped polymer is able to maintain its electrical conductivity for about 20 min when exposed to air and recovers rapidly when returned to a nitrogen atmosphere. Overall, solution coprocessing of p(gNDI-gT2) and N-DMBI results in a larger thermoelectric power factor of up to 0.4 μW K–2 m–1 compared to other NDI-based polymers.

Thermal, dielectric studies on pure and amino acid ( L-glutamic acid, L-histidine, L-valine) doped KDP single crystals

Science.gov (United States)

Kumaresan, P.; Moorthy Babu, S.; Anbarasan, P. M.

2008-05-01

Amino acids ( L-glutamic acid, L-histidine, L-valine) doped potassium dihydrogen phospate crystals are grown by solution growth technique. Slow cooling as well as slow evaporation methods were employed to grow these crystals. The concentration of dopants in the mother solution was varied from 0.1 mol% to 10 mol%. The solubility data for all dopants concentration were determined. There is variation in pH value and hence, there is habit modification of the grown crystals were characterized with UV-VIS, FT-IR studies, SHG trace elements and dielectric studies reveal slight distortion of lattice parameter for the heavily doped KDP crystals. UV-Visible spectra confirm the improvement in the transparency of these crystals on doping metal ions. FT-IR spectra reveal strong absorption band between 1400 and 1600 cm -1 for metal ion doped crystals. TGA-DTA studies reveal good thermal stability. The dopants increase the hardness value of the material and it also depends on the concentration of the dopants. Amino acids doping improved the NLO properties. The detailed results on the spectral parameters, habit modifications and constant values will be presented.

Porous boron doped diamonds as metal-free catalysts for the oxygen reduction reaction in alkaline solution

Science.gov (United States)

Suo, Ni; Huang, Hao; Wu, Aimin; Cao, Guozhong; Hou, Xiaoduo; Zhang, Guifeng

2018-05-01

Porous boron doped diamonds (BDDs) were obtained on foam nickel substrates with a porosity of 80%, 85%, 90% and 95% respectively by hot filament chemical vapor deposition (HFCVD) technology. Scanning electron microscopy (SEM) reveals that uniform and compact BDDs with a cauliflower-like morphology have covered the overall frame of the foam nickel substrates. Raman spectroscopy shows that the BDDs have a poor crystallinity due to heavily doping boron. X-ray photoelectron spectroscopy (XPS) analysis effectively demonstrates that boron atoms can be successfully incorporated into the crystal lattice of diamonds. Electrochemical measurements indicate that the oxygen reduction potential is unaffected by the specific surface area (SSA), and both the onset potential and the limiting diffusion current density are enhanced with increasing SSA. It is also found that the durability and methanol tolerance of the boron doped diamond catalysts are attenuated as the increasing of SSA. The SSA of the catalyst is directly proportional to the oxygen reduction activity and inversely to the durability and methanol resistance. These results provide a reference to the application of porous boron doped diamonds as potential cathodic catalysts for the oxygen reduction reaction in alkaline solution by adjusting the SSA.

Effects of Mg doping in the quantum barriers on the efficiency droop of GaN based light emitting diodes

International Nuclear Information System (INIS)

Liu Yang; Yang Yongchun

2016-01-01

The effects of Mg doping in the quantum barriers (QBs) on the efficiency droop of GaN based light emitting diodes (LEDs) were investigated through a duel wavelength method. Barrier Mg doping would lead to the enhanced hole transportation and reduced polarization field in the quantum wells (QWs), both may reduce the efficiency droop. However, heavy Mg doping in the QBs would strongly deteriorate the crystal quality of the QWs grown after the doped QB. When increasing the injection current, the carriers would escape from the QWs between n-GaN and the doped QB and recombine non-radiatively in the QWs grown after the doped QB, leading to a serious efficiency droop. (paper)

Density functional theory based study of chlorine doped WS2-metal interface

International Nuclear Information System (INIS)

Chanana, Anuja; Mahapatra, Santanu

2016-01-01

Investigation of a transition metal dichalcogenide (TMD)-metal interface is essential for the effective functioning of monolayer TMD based field effect transistors. In this work, we employ the Density Functional Theory calculations to analyze the modulation of the electronic structure of monolayer WS 2 with chlorine doping and the relative changes in the contact properties when interfaced with gold and palladium. We initially examine the atomic and electronic structures of pure and doped monolayer WS 2 supercell and explore the formation of midgap states with band splitting near the conduction band edge. Further, we analyze the contact nature of the pure supercell with Au and Pd. We find that while Au is physiosorbed and forms n-type contact, Pd is chemisorped and forms p-type contact with a higher valence electron density. Next, we study the interface formed between the Cl-doped supercell and metals and observe a reduction in the Schottky barrier height (SBH) in comparison to the pure supercell. This reduction found is higher for Pd in comparison to Au, which is further validated by examining the charge transfer occurring at the interface. Our study confirms that Cl doping is an efficient mechanism to reduce the n-SBH for both Au and Pd, which form different types of contact with WS 2 .

Intermediate band mobility in heavily titanium-doped silicon layers

Energy Technology Data Exchange (ETDEWEB)

Gonzalez-Diaz, G.; Olea, J.; Martil, I.; Pastor, D. [Dpto. de Fisica Aplicada III (Electricidad y Electronica), Facultad de Ciencias Fisicas, Universidad Complutense de Madrid, 28040 Madrid (Spain); Marti, A.; Antolin, E.; Luque, A [Instituto de Energia Solar, Universidad Politecnica de Madrid, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Ciudad Universitaria sn, 28040 Madrid (Spain)

2009-09-15

The sheet resistance and the Hall mobility of high-purity Si wafers, in whose surface Ti atoms are implanted and laser annealed reaching concentrations above 10{sup 21} cm{sup -3}, are measured in the 90-370 K range. Below 240 K, an unconventional behavior is observed that is well explained on the basis of the appearance of an intermediate band (IB) region able to form a blocking junction with the substrate and of the appearance of an IB conduction. Explanations based on ordinary device physics fail to justify all the unconventional behavior of the characteristics observed. (author)

Thermal Conductivity and Specific Heat Capacity of Dodecylbenzenesulfonic Acid-Doped Polyaniline Particles—Water Based Nanofluid

Directory of Open Access Journals (Sweden)

Tze Siong Chew

2015-07-01

Full Text Available Nanofluid has attracted great attention due to its superior thermal properties. In this study, chemical oxidative polymerization of aniline was carried out in the presence of dodecylbenzenesulfonic acid (DBSA as a dopant. Particles of DBSA-doped polyaniline (DBSA-doped PANI with the size range of 15 to 50 nm were obtained, as indicated by transmission electron microscope (TEM. Results of ultra violet-visible (UV-Vis absorption and Fourier transform infrared (FTIR spectroscopies as well as thermogravimetric analysis showed that PANI nanoparticles were doped with DBSA molecules. The doping level found was 36.8%, as calculated from elemental analysis data. Thermal conductivity of water was enhanced by 5.4% when dispersed with 1.0 wt% of DBSA-PANI nanoparticles. Specific heat capacity of water-based nanofluids decreased with increasing amount of DBSA-PANI nanoparticles.

Effect of the Channel Length on the Transport Characteristics of Transistors Based on Boron-Doped Graphene Ribbons

Directory of Open Access Journals (Sweden)

Paolo Marconcini

2018-04-01

Full Text Available Substitutional boron doping of devices based on graphene ribbons gives rise to a unipolar behavior, a mobility gap, and an increase of the I O N / I O F F ratio of the transistor. Here we study how this effect depends on the length of the doped channel. By means of self-consistent simulations based on a tight-binding description and a non-equilibrium Green’s function approach, we demonstrate a promising increase of the I O N / I O F F ratio with the length of the channel, as a consequence of the different transport regimes in the ON and OFF states. Therefore, the adoption of doped ribbons with longer aspect ratios could represent a significant step toward graphene-based transistors with an improved switching behavior.

STRUCTURAL CHARACTERISTICS & DIELECTRIC PROPERTIES OF TANTALUM OXIDE DOPED BARIUM TITANATE BASED MATERIALS

Directory of Open Access Journals (Sweden)

Md. Fakhrul Islam

2013-01-01

Full Text Available In this research, the causal relationship between the dielectric properties and the structural characteristics of 0.5 & 1.0 mole % Ta2O5 doped BaTiO3 based ceramic materials were investigated under different sintering conditions. Dielectric properties and microstructure of BaTio3 ceramics were significantly influenced by the addition of a small amount of Ta2O5. Dielectric properties were investigated by measuring the dielectric constant (k as a function of temperature and frequency. Percent theoretical density (%TD above 90 % was achieved for 0.5 and 1.0 mole %Ta2O5 doped BaTiO3. It was observed that the grain size decreased markedly above a doping concentration of 0.5 mole % Ta2O5. Although fine grain size down to 200 - 300 nm was attained, grain sizes in the range of 1-1.8µm showed the most alluring properties. The fine-grain quality and high density of the Ta2O5 doped BaTiO3 ceramic resulted in tenfold increase of dielectric constant. Stable value of dielectric constant as high as 13000 - 14000 was found in the temperature range of 55 to 80 °C, for 1.0 mole % Ta2O5 doped samples with corresponding shift of Curie point to ~82 °C. Experiments divulged that incorporation of a proper content of Ta2O5 in BaTiO3 could control the grain growth, shift the Curie temperature and hence significantly improve the dielectric property of the BaTiO3 ceramics.

Improvement in the performance of graphene nanoribbon p-i-n tunneling field effect transistors by applying lightly doped profile on drain region

Science.gov (United States)

Naderi, Ali

2017-12-01

In this paper, an efficient structure with lightly doped drain region is proposed for p-i-n graphene nanoribbon field effect transistors (LD-PIN-GNRFET). Self-consistent solution of Poisson and Schrödinger equation within Nonequilibrium Green’s function (NEGF) formalism has been employed to simulate the quantum transport of the devices. In proposed structure, source region is doped by constant doping density, channel is an intrinsic GNR, and drain region contains two parts with lightly and heavily doped doping distributions. The important challenge in tunneling devices is obtaining higher current ratio. Our simulations demonstrate that LD-PIN-GNRFET is a steep slope device which not only reduces the leakage current and current ratio but also enhances delay, power delay product, and cutoff frequency in comparison with conventional PIN GNRFETs with uniform distribution of impurity and with linear doping profile in drain region. Also, the device is able to operate in higher drain-source voltages due to the effectively reduced electric field at drain side. Briefly, the proposed structure can be considered as a more reliable device for low standby-power logic applications operating at higher voltages and upper cutoff frequencies.

Insight about electrical properties of low-temperature solution-processed Al-doped ZnO nanoparticle based layers for TFT applications

Energy Technology Data Exchange (ETDEWEB)

Diallo, Abdou Karim; Gaceur, Meriem; Fall, Sadiara; Didane, Yahia; Ben Dkhil, Sadok; Margeat, Olivier, E-mail: margeat@cinam.univ-mrs.fr; Ackermann, Jörg; Videlot-Ackermann, Christine, E-mail: videlot@cinam.univ-mrs.fr

2016-12-15

Highlights: • Al-doped ZnO (AZO) nanoparticles. • Impact of dispersion state and solid state on electrical properties. • Extrinsic doping with Al for high conducting AZO nanoparticle based layers. • Low-temperature operating nanoparticulate AZO TFTs. - Abstract: Aluminium-doped zinc oxide nanoparticles (NPs) with controlled Al doping contents (AZO{sub x} with x = 0–0.8 at% of Al) were explored as new oxide semiconductor materials to study the impact of doping on both solution and solid states. Polycrystalline AZO{sub x} thin films were produced by spin-coating the dispersions following by a thermal post-treatment at low-temperature (80 °C or 150 °C). The coated AZO{sub x} films were employed as active layer in thin-film transistors. Morphology and microstructure were studied by scanning electron microscopy and X-ray diffraction. The impact on the device performances (mobility, conductivity, charge carrier density) of Al-doping content together with the solution state was examined. Spin-coated films delivered an electron mobility up to 3 × 10{sup −2} cm{sup 2}/Vs for the highest Al-doping ratio AZO{sub 0.8}. Despite highly different morphologies, extrinsic doping with aluminium significantly increases the conductivity of low temperature solution-processed AZO{sub x} NPs series based layers by several orders of magnitude from AZO{sub 0} to AZO{sub 0.8}.

High Capacity of Hard Carbon Anode in Na-Ion Batteries Unlocked by PO _x Doping

Energy Technology Data Exchange (ETDEWEB)

Li, Zhifei; Ma, Lu; Surta, Todd Wesley; Bommier, Clement; Jian, Zelang; Xing, Zhenyu; Stickle, William F.; Dolgos, Michelle; Amine, Khalil; Lu, Jun; Wu, Tianpin; Ji, Xiulei

2016-08-12

The capacity of hard carbon anodes in Na-ion batteries 2.5 rarely reaches values beyond 300 mAh/g. We report that doping POx into local structures of hard carbon increases its reversible capacity from 283 to 359 mAh/g. We confirm that the doped POx is redox inactive by X-ray adsorption near edge structure measurements, thus not contributing to the higher capacity. We observe two significant changes of hard carbon's local structures caused by doping. First, the (002) d-spacing inside the turbostratic nanodomains is increased, revealed by both laboratory and synchrotron X-ray diffraction. Second, doping turns turbostratic nanodomains more defective along ab planes, indicated by neutron total scattering and the associated pair distribution function studies. The local structural changes of hard carbon are correlated to the higher capacity, where both the plateau and slope regions in the potential profiles are enhanced. Our study demonstrates that Na-ion storage in hard carbon heavily depends on carbon local structures, where such structures, despite being disordered, can be tuned toward unusually high capacities.

Explosive phenomena in heavily irradiated NaCl

NARCIS (Netherlands)

denHartog, HW; Vainshtein, DI; Matthews, GE; Williams, RT

1997-01-01

In heavily irradiated NaCl crystals explosive phenomena can be initiated during irradiation or afterwards when samples are heated to temperatures between 100 and 250 degrees C. During irradiation of NaCl Na and Cl-2 precipitates and void structures are produced along with the accumulation of stored

Synthesis, characterization and potential utility of doped ceramics based catalysts

Science.gov (United States)

Sharma, Ritika; Yadav, Deepshikha; Singh, G. P.; Vyas, G.; Bhojak, N.

2018-05-01

Excessive utilization of petrol, diesel and other fossil fuels, continuous increase in their prices, and the big problem of carbon dioxide mission have encouraged scientists and technologist to find either new sources of energy or to develop technologies for the sustainable utilization of fuel. Biofuels are the only energy technologies that can resolve the problem of carbon dioxide emission in the atmosphere as well as reduce the amount of fossil fuel burned. Bio ethanol and biodiesel are the most common types of biofuel which are being used at present. Biodiesel has become more interesting for all the researchers in present scenario. Various feedstock viz. edible, nonedible oils, waste cooking oil, animal fat, algae etc, are using for the production of biodiesel worldwide according to their availability. Selection of efficient heterogeneous catalysts for biodiesel preparation still needs more attention of researchers. The present investigation deals with determination of synthesis, characterization and applications of doped ceramic based materials in different medium. Two of doped ceramic based catalysts which has been potentially used for the production of biodiesel. The Engine performance of biodiesel samples, made from industrial waste oils and ceramic based catalyst, have also been investigated and found up to satisfactory levels.

Electrochemical Biosensor Based on Boron-Doped Diamond Electrodes with Modified Surfaces

OpenAIRE

Yu, Yuan; Zhou, Yanli; Wu, Liangzhuan; Zhi, Jinfang

2012-01-01

Boron-doped diamond (BDD) thin films, as one kind of electrode materials, are superior to conventional carbon-based materials including carbon paste, porous carbon, glassy carbon (GC), carbon nanotubes in terms of high stability, wide potential window, low background current, and good biocompatibility. Electrochemical biosensor based on BDD electrodes have attracted extensive interests due to the superior properties of BDD electrodes and the merits of biosensors, such as specificity, sensitiv...

Versatile and Tunable Transparent Conducting Electrodes Based on Doped Graphene

KAUST Repository

Mansour, Ahmed E.

2016-11-25

The continued growth of the optoelectronics industry and the emergence of wearable and flexible electronics will continue to place an ever increasing pressure on replacing ITO, the most widely used transparent conducting electrode (TCE). Among the various candidates, graphene shows the highest optical transmittance in addition to promising electrical transport properties. The currently available large-scale synthesis routes of graphene result in polycrystalline samples rife with grain boundaries and other defects which limit its transport properties. Chemical doping of graphene is a viable route towards increasing its conductivity and tuning its work function. However, dopants are typically present at the surface of the graphene sheet, making them highly susceptible to degradation in environmental conditions. Few-layers graphene (FLG) is a more resilient form of graphene exhibiting higher conductivity and performance stability under stretching and bending as contrasted to single-layer graphene. In addition FLG presents the advantage of being amenable bulk doping by intercalation. Herein, we explore non-covalent doping routes of CVD FLG, such as surface doping, intercalation and combination thereof, through in-depth and systematic characterization of the electrical transport properties and energy levels shifts. The intercalation of FLG with Br2 and FeCl3 is demonstrated, showing the highest improvements of the figure of merit of TCEs of any doping scheme, which results from up to a five-fold increase in conductivity while maintaining the transmittance within 3% of that for the pristine value. Importantly the intercalation yields TCEs that are air-stable, due to encapsulation of the intercalant in the bulk of FLG. Surface doping with novel solution-processed metal-organic molecular species (n- and p-type) is demonstrated with an unprecedented range of work function modulation, resulting from electron transfer and the formation of molecular surface dipoles. However

Structural Characteristics & Dielectric Properties of Tantalum Oxide Doped Barium Titanate Based Materials

Directory of Open Access Journals (Sweden)

Rubayyat Mahbub

2012-11-01

Full Text Available In this research, the causal relationship between the dielectric properties and the structural characteristics of 0.5 & 1.0 mol% Ta2O5 doped BaTiO3 based ceramic materials were investigated under different sintering conditions. Dielectric properties and microstructure of BaTio3 ceramics were significantly influenced by the addition of a small amount of Ta2O5. Dielectric properties were investigated by measuring the dielectric constant (k as a function of temperature and frequency. Percent theoretical density (%TD above 90% was achieved for 0.5 and 1.0 mol% Ta2O5 doped BaTiO3. It was observed that the grain size decreased markedly above a doping concentration of 0·5 mol% Ta2O5. Although fine grain size down to 200-300nm was attained, grain sizes in the range of 1-1.8µm showed the most alluring properties. The fine-grain quality and high density of the Ta2O5 doped BaTiO3 ceramic resulted in tenfold increase of dielectric constant. Stable value of dielectric constant as high as 13000-14000 was found in the temperature range of  55 to 80°C, for 1.0 mol% Ta2O5 doped samples with corresponding shift of Curie point to ~82°C. Experiments divulged that incorporation of a proper content of Ta2O5 in BaTiO3 could control the grain growth, shift the Curie temperature and hence significantly improve the dielectric property of the BaTiO3 ceramics.

Effects of the F₄TCNQ-Doped Pentacene Interlayers on Performance Improvement of Top-Contact Pentacene-Based Organic Thin-Film Transistors.

Science.gov (United States)

Fan, Ching-Lin; Lin, Wei-Chun; Chang, Hsiang-Sheng; Lin, Yu-Zuo; Huang, Bohr-Ran

2016-01-13

In this paper, the top-contact (TC) pentacene-based organic thin-film transistor (OTFT) with a tetrafluorotetracyanoquinodimethane (F₄TCNQ)-doped pentacene interlayer between the source/drain electrodes and the pentacene channel layer were fabricated using the co-evaporation method. Compared with a pentacene-based OTFT without an interlayer, OTFTs with an F₄TCNQ:pentacene ratio of 1:1 showed considerably improved electrical characteristics. In addition, the dependence of the OTFT performance on the thickness of the F₄TCNQ-doped pentacene interlayer is weaker than that on a Teflon interlayer. Therefore, a molecular doping-type F₄TCNQ-doped pentacene interlayer is a suitable carrier injection layer that can improve the TC-OTFT performance and facilitate obtaining a stable process window.

Affinity-based biosensors in sport medicine and doping control analysis.

Science.gov (United States)

Mazzei, Franco; Antiochia, Riccarda; Botrè, Francesco; Favero, Gabriele; Tortolini, Cristina

2014-01-01

Affinity-based biosensors (ABBs) have started to be considered in sport medicine and doping control analysis because they are cheap, easy to use and sufficiently selective analytical devices, characterized by a reversible interaction with the analyte under investigation allowing the use of the same sensor for multiple analyses. In this review we describe the main categories of substances reported in the World Anti-Doping Agency Prohibited List and how ABBs may contribute to their detection. Although several ABBs proposed in the last few years display limit of detections that are in principle matching the World Anti-Doping Agency requirements, their application in the framework of 'traditional' antidoping tests seems quite unlikely, mainly because of the still insufficient selectivity especially in the case of 'pseudo-endogenous' compounds, and on the lack of complete information regarding potential matrix effects in real samples and following their routine use. At the same time, ABBs could contribute to fill a significant information gap concerning complementary evidence that can be obtained from their use 'on the spot', as well as to preselect a risk population of individuals to be targeted for a full antidoping test; while in sport medicine they could contribute to obtaining analytical information of physiological relevance from the measurement of specific parameters or markers before, during and after physical exercise.

Effect of Mg-doping on the degradation of LiNiO2-based cathode materials by combined spectroscopic methods

OpenAIRE

Muto, Shunsuke; Tatsumi, Kazuyoshi; Kojima, Yuji; Oka, Hideaki; Kondo, Hiroki; Horibuchi, Kayo; Ukyo, Yoshio

2012-01-01

The performance of a LiNiO2-based cell has been shown to be significantly improved by Mg-doping of LiNi0.8Co0.15Al0.05O2 (Mg-doped NCA) cathode materials. In the present study, the effects of Mg-doping were examined by electrochemical impedance spectroscopy (EIS) and scanning transmission electron microscopy-electron energy loss spectroscopy. EIS analysis revealed that the activation energy of Mg-doped NCA for the charge-transfer reaction was larger than that of undoped NCA by a factor of ∼10...

Development of efficient, radiation-insensitive GaAs:Zn LEDs

International Nuclear Information System (INIS)

Barnes, C.E.

1977-01-01

Although amphoterically Si doped GaAs LEDs are commercially popular because of their high light output, they are extremely sensitive to irradiation. Therefore, it would be desirable to have a viable alternative available for radiation environment applications. In this work it is shown that by increasing the hole concentration in the active region of nonamphoterically doped GaAs LEDs, one can simultaneously achieve high light output and low radiation sensitivity. Experimental results indicate that the minority carrier lifetime is smaller in more heavily doped devices so that the lifetime-damage constant, tau/sub o/K, is also smaller. Hence, the heavily doped devices should have greater radiation hardness. Neutron-induced light output degradation data as a function of hole concentration confirm this conclusion. The results also show that the pre-irradiation light output is greatest in the heavily doped LEDs. The accompanying decrease of tau/sub o/ in the heavily doped devices indicates that the total minority carrier lifetime is at least partially controlled by the radiative lifetime; a requirement for simultaneously achieving radiation hardness and high initial light output. Finally, an experimental comparison with amphoterically Si doped LEDs shows that the heavily doped devices are superior for neutron fluences greater than 2 x 10 12 n/cm 2

Back wall solar cell

Science.gov (United States)

Brandhorst, H. W., Jr. (Inventor)

1978-01-01

A solar cell is disclosed which comprises a first semiconductor material of one conductivity type with one face having the same conductivity type but more heavily doped to form a field region arranged to receive the radiant energy to be converted to electrical energy, and a layer of a second semiconductor material, preferably highly doped, of opposite conductivity type on the first semiconductor material adjacent the first semiconductor material at an interface remote from the heavily doped field region. Instead of the opposite conductivity layer, a metallic Schottky diode layer may be used, in which case no additional back contact is needed. A contact such as a gridded contact, previous to the radiant energy may be applied to the heavily doped field region of the more heavily doped, same conductivity material for its contact.

Highly luminescent Eu{sup 3+}-doped benzenetricarboxylate based materials

Energy Technology Data Exchange (ETDEWEB)

Silva, Ivan G.N. [Departamento de Química Fundamental, Instituto de Química da Universidade de São Paulo, Av. Prof. Lineu Prestes 748, São Paulo 05508-900, SP (Brazil); Mustafa, Danilo, E-mail: dmustafa@iq.usp.br [Departamento de Química Fundamental, Instituto de Química da Universidade de São Paulo, Av. Prof. Lineu Prestes 748, São Paulo 05508-900, SP (Brazil); Andreoli, Bruno [Departamento de Química Fundamental, Instituto de Química da Universidade de São Paulo, Av. Prof. Lineu Prestes 748, São Paulo 05508-900, SP (Brazil); Felinto, Maria C.F.C. [Centro de Química do Meio Ambiente, Instituto de Pesquisas Energéticas e Nucleares, Av. Prof. Lineu Prestes 2242, São Paulo 05508-000, SP (Brazil); Malta, Oscar L. [Departamento de Química Fundamental, Universidade Federal de Pernambuco, Av. Prof. Moraes Rego, 1235, Recife 50670-90, PE (Brazil); Brito, Hermi F., E-mail: hefbrito@iq.usp.br [Departamento de Química Fundamental, Instituto de Química da Universidade de São Paulo, Av. Prof. Lineu Prestes 748, São Paulo 05508-900, SP (Brazil)

2016-02-15

[RE(TMA)] anhydrous complexes (RE{sup 3+}: Y, Gd and Lu) present high red emission intensity with a quantum efficiency (~45%) for the [Y(TMA):Eu{sup 3+}] complexes, due to the absence of non-radioactive decay pathways mediated by water molecules. The complexes were prepared in mild conditions. All the compounds are crystalline and thermostable up to 460 °C. Phosphorescence data of the complexes with Y, Gd and Lu show that the T{sub 1} state of the TMA{sup 3−} anion has energy higher than the {sup 5}D{sub 0} emitting level of the Eu{sup 3+} ion, indicating that the ligand can act as an intramolecular energy sensitizer. The photoluminescence properties of the doped materials were studied based on the excitation and emission spectra and luminescence decay curves. The experimental intensity parameters (Ω{sub λ}), lifetimes (τ), radiative (A{sub rad}) and non-radiative (A{sub nrad}) decay rates were determined and discussed. - Highlights: • Highly luminescent Europium doped anhydrous complexes. • Efficient monochromatic red light conversion molecular devices (LCMDs). • High emission quantum efficiencies.

Formaldehyde sensor based on Ni-doped tetrapod-shaped ZnO nanopowder induced by external magnetic field

Science.gov (United States)

Bai, Zikui; Xie, Changsheng; Hu, Mulin; Zhang, Shunping

2008-12-01

The sensors based on Ni-doped ZnO nanopowder with tetrapod-shape (T-ZnO) were fabricated by screen-printing technique with external magnetic field in different direction. The morphologies and crystal structures of the thick film were characterized by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FE-SEM), respectively. Gas-sensing property of sensors responded to 100 ppm formaldehyde was also detected. The results show that the direction of magnetic field has crucial effect on the sensor sensitivity. The sensors based on 5 wt% Ni-doped T-ZnO induced by magnetic field in parallel direction to the thick film surface, has the optimization sensitivity, the shortest response and recovery time, which are 10.6, 16 and 15 s, respectively. The magnetic-field induction model and the gas-sensing mechanism of the Ni-doped T-ZnO are proposed.

Controlled electrochemical doping of graphene-based 3D nanoarchitecture electrodes for supercapacitors and capacitive deionisation.

Science.gov (United States)

Abdelkader, A M; Fray, D J

2017-10-05

Chemically-doped graphenes are promising electrode materials for energy storage and electrosorption applications. Here, an affordable electrochemical green process is introduced to dope graphene with nitrogen. The process is based on reversing the polarity of two identical graphene oxide (GO) electrodes in molten KCl-LiCl-Li 3 N. During the cathodic step, the oxygen functional groups on the GO surface are removed through direct electro-deoxidation reactions or a reaction with the deposited lithium. In the anodic step, nitrogen is adsorbed onto the surface of graphene and subsequently reacts to form nitrogen-doped graphene. The doping process is controllable, and graphene with up to 7.4 at% nitrogen can be produced. The electrochemically treated electrodes show a specific capacitance of 320 F g -1 in an aqueous KOH electrolyte and maintain 96% of this value after 10 000 cycles. The electrodes also display excellent electrosorption performance in capacitive deionisation devices with the salt removal efficiency reaching up to 18.6 mg g -1 .

First-Principles Study of Antimony Doping Effects on the Iron-Based Superconductor CaFe(SbxAs1-x)2

Science.gov (United States)

Nagai, Yuki; Nakamura, Hiroki; Machida, Masahiko; Kuroki, Kazuhiko

2015-09-01

We study antimony doping effects on the iron-based superconductor CaFe(SbxAs1-x)2 by using the first-principles calculation. The calculations reveal that the substitution of a doped antimony atom into As of the chainlike As layers is more stable than that into FeAs layers. This prediction can be checked by experiments. Our results suggest that doping homologous elements into the chainlike As layers, which only exist in the novel 112 system, is responsible for rising up the critical temperature. We discuss antimony doping effects on the electronic structure. It is found that the calculated band structures with and without the antimony doping are similar to each other within our framework.

Valence band states in Si-based p-type delta-doped field effect transistors

International Nuclear Information System (INIS)

Martinez-Orozco, J C; Vlaev, Stoyan J

2009-01-01

We present tight-binding calculations of the hole level structure of δ-doped Field Effect Transistor in a Si matrix within the first neighbors sp 3 s* semi-empirical tight-binding model including spin. We employ analytical expressions for Schottky barrier potential and the p-type δ-doped well based on a Thomas-Fermi approximation, we consider these potentials as external ones, so in the computations they are added to the diagonal terms of the tight-binding Hamiltonian, by this way we have the possibility to study the energy levels behavior as we vary the backbone parameters in the system: the two-dimensional impurity density (p 2d ) of the p-type δ-doped well and the contact voltage (V c ). The aim of this calculation is to demonstrate that the tight-binding approximation is suitable for device characterization that permits us to propose optimal values for the input parameters involved in the device design.

Valence band states in Si-based p-type delta-doped field effect transistors

Energy Technology Data Exchange (ETDEWEB)

Martinez-Orozco, J C; Vlaev, Stoyan J, E-mail: jcmover@correo.unam.m [Unidad Academica de Fisica, Universidad Autonoma de Zacatecas, Calzada Solidaridad esquina con Paseo la Bufa S/N, C.P. 98060, Zacatecas, Zac. (Mexico)

2009-05-01

We present tight-binding calculations of the hole level structure of delta-doped Field Effect Transistor in a Si matrix within the first neighbors sp{sup 3}s* semi-empirical tight-binding model including spin. We employ analytical expressions for Schottky barrier potential and the p-type delta-doped well based on a Thomas-Fermi approximation, we consider these potentials as external ones, so in the computations they are added to the diagonal terms of the tight-binding Hamiltonian, by this way we have the possibility to study the energy levels behavior as we vary the backbone parameters in the system: the two-dimensional impurity density (p{sub 2d}) of the p-type delta-doped well and the contact voltage (V{sub c}). The aim of this calculation is to demonstrate that the tight-binding approximation is suitable for device characterization that permits us to propose optimal values for the input parameters involved in the device design.

A stabilized optical frequency comb based on an Er-doped fiber femtosecond laser

Science.gov (United States)

Xia, Chuanqing; Wu, Tengfei; Zhao, Chunbo; Xing, Shuai

2018-03-01

An optical frequency comb based on a 250 MHz home-made Er-doped fiber femtosecond laser is presented in this paper. The Er-doped fiber laser has a ring cavity and operates mode-locked in femtosecond regime with the technique of nonlinear polarization rotation. The pulse duration is 118 fs and the spectral width is 30 nm. A part of the femtosecond laser is amplified in Er-doped fiber amplifier before propagating through a piece of highly nonlinear fiber for expanding the spectrum. The carrier-envelope offset frequency of the comb which has a signal-to-noise ratio more than 35 dB is extracted by means of f-2f beating. It demonstrates that both carrier-envelope offset frequency and repetition frequency keep phase locked to a Rubidium atomic clock simultaneously for 2 hours. The frequency stabilized fiber combs will be increasingly applied in optical metrology, attosecond pulse generation, and absolute distance measurement.

A high-performance supercapacitor electrode based on N-doped porous graphene

Science.gov (United States)

Dai, Shuge; Liu, Zhen; Zhao, Bote; Zeng, Jianhuang; Hu, Hao; Zhang, Qiaobao; Chen, Dongchang; Qu, Chong; Dang, Dai; Liu, Meilin

2018-05-01

The development of high-performance supercapacitors (SCs) often faces some contradictory and competing requirements such as excellent rate capability, long cycling life, and high energy density. One effective strategy is to explore electrode materials of high capacitance, electrode architectures of fast charge and mass transfer, and electrolytes of wide voltage window. Here we report a facile and readily scalable strategy to produce high-performance N-doped graphene with a high specific capacitance (∼390 F g-1). A symmetric SC device with a wide voltage window of 3.5 V is also successfully fabricated based on the N-doped graphene electrode. More importantly, the as-assembled symmetric SC delivers a high energy density of 55 Wh kg-1 at a power density of 1800 W kg-1 while maintaining superior cycling life (retaining 96.6% of the initial capacitance after 20,000 cycles). Even at a power density as high as 8800 W kg-1, it still retains an energy density of 29 Wh kg-1, higher than those of previously reported graphene-based symmetric SCs.

Germanium content and base doping level influence on extrinsic base resistance and dynamic performances of SiGe:C heterojunction bipolar transistors

International Nuclear Information System (INIS)

Ramirez-Garcia, E; Valdez-Monroy, L A; Rodriguez-Mendez, L M; Valdez-Perez, D; Galaz-Larios, M C; Enciso-Aguilar, M A; Zerounian, N; Aniel, F

2014-01-01

We describe a reliable technique to separate the different contributions to the apparent base resistance (R B  = R Bx  + X R Bi ) of silicon germanium carbon (SiGe:C) heterojunction bipolar transistors (HBTs). The extrinsic base resistance (R Bx ) is quantified using small-signal measurements. The base-collector junction distribution factor (X) and the intrinsic base resistance (R Bi ) are extracted from high frequency noise (MWN) measurements. This method is applied to five different SiGe:C HBTs varying in base doping level and germanium content. The results show that high doping levels improve high frequency noise performances while germanium gradient helps to maintain outstanding dynamic performances. This method could be used to elucidate the base technological configuration that ensures low noise together with remarkable dynamic performances in state-of-the-art SiGe:C HBTs. (paper)

Heavily doped M1−xUxF2+2x fluorites studied by quasielastic neutron scattering(M=Ba) and specific heat measurements (M=Pb)

DEFF Research Database (Denmark)

Andersen, Niels Hessel; Clausen, Kurt Nørgaard; Kjems, Jørgen

1983-01-01

of doping is an increase of the thermally generated defect concentration; at high temperatures the effect is reversed. The microscopic defect structure of Ba0.9U0.1F2.2 has been studied by diffuse quasielastic neutron scattering experiments at room temperature. The experimental observations are in good......The thermal generation of defects in pure and doped Pb1−xUxF2+2x (x=0, 0.05and0.10) has been studied by specific heat measurements between 475 k and 875 k. A simple phenomenological mean field thermodynamic model has been developed and used to interpret the data. At low temperatures the result...

Thermal, Dielectric Studies on Pure and Amino Acid L-Glutamic Acid, L-Histidine L-Valine Doped Potassium Dihydrogen Phosphate Single Crystals

Science.gov (United States)

Kumaresan, P.; Babu, S. Moorthy; Anbarasan, P. M.

Amino acids (L-Glutamic acid, L-Histidine, L-Valine) doped potassium dihydrogen phosphate crystals were grown by the solution growth technique. Slow cooling as well as slow evaporation methods were employed to grow these crystals. The concentration of dopants in the mother solution was varied from 0.1 mole % to 10 mole %. The solubility data for all dopant concentrations were determined. The variation in pH and the corresponding habit modification of the grown crystals were characterized with UV - VIS, FT-IR and SHG trace elements, and dielectric studies reveal slight distortion of lattice parameter for the heavily doped KDP crystals. TGA-DTA studies reveal good thermal stability. The dopants increase the hardness value of the material, which also depends on the concentration of the dopants. Amino acids doping improved the NLO properties. The detailed results on the spectral parameters, habit modifications and constant values will be presented.

Synthesis, characterization and gas sensing properties of undoped and Zn-doped γ-Fe2O3-based gas sensors

International Nuclear Information System (INIS)

Jing Zhihong

2006-01-01

In this study, undoped and Zn-doped γ-Fe 2 O 3 nanopowders have been prepared using Fe(NO 3 ) 3 .9H 2 O and Zn(NO 3 ) 2 .6H 2 O as starting materials and lauryl alcohol as anhydrous medium. Thermo-gravimetric analysis (TGA), differential thermal analysis (DTA), X-ray diffraction (XRD) and transmission electron micrograph (TEM) were employed to characterize the products. Sensitivity characteristics of the undoped and Zn-doped γ-Fe 2 O 3 semiconductor gas sensors have been investigated. The results show that both of the undoped and 15 mol% Zn-doped γ-Fe 2 O 3 -based gas sensors present good sensitivity and selectivity to acetone and ethanol in presence of CH 4 , H 2 and CO at the operating temperatures of 240 and 270 deg. C, respectively. After being doped with 15 mol% Zn addition, the γ-Fe 2 O 3 -based gas element displays higher sensitivity and selectivity as well as shorter response-recovery time compared with the undoped, suggesting that the promoting effect of ZnO is excellent. So, it seems that the γ-Fe 2 O 3 -based gas sensor doped with 15 mol% Zn is expected to be a promising sensor for detecting acetone and ethanol

Si-doping bone composite based on protein template-mediated assembly for enhancing bone regeneration

Science.gov (United States)

Yang, Qin; Du, Yingying; Wang, Yifan; Wang, Zhiying; Ma, Jun; Wang, Jianglin; Zhang, Shengmin

2017-06-01

Bio-inspired hybrid materials that contain organic and inorganic networks interpenetration at the molecular level have been a particular focus of interest on designing novel nanoscale composites. Here we firstly synthesized a series of hybrid bone composites, silicon-hydroxyapatites/silk fibroin/collagen, based on a specific molecular assembled strategy. Results of material characterization confirmed that silicate had been successfully doped into nano-hydroxyapatite lattice. In vitro evaluation at the cellular level clearly showed that these Si-doped composites were capable of promoting the adhesion and proliferation of rat mesenchymal stem cells (rMSCs), extremely enhancing osteoblastic differentiation of rMSCs compared with silicon-free composite. More interestingly, we found there was a critical point of silicon content in the composition on regulating multiple cell behaviors. In vivo animal evaluation further demonstrated that Si-doped composites enabled to significantly improve the repair of cranial bone defect. Consequently, our current work not only suggests fabricating a potential bone repair materials by integrating element-doping and molecular assembled strategy in one system, but also paves a new way for constructing multi-functional composite materials in the future.

Si-doping bone composite based on protein template-mediated assembly for enhancing bone regeneration

Institute of Scientific and Technical Information of China (English)

Qin YANG; Yingying DU; Yifan WANG; Zhiying WANG; Jun MA; Jianglin WANG; Shengmin ZHANG

2017-01-01

Bio-inspired hybrid materials that contain organic and inorganic networks interpenetration at the molecular level have been a particular focus of interest on designing novel nanoscale composites.Here we firstly synthesized a series of hybrid bone composites,silicon-hydroxyapatites/silk fibroin/collagen,based on a specific molecular assembled strategy.Results of material characterization confirmed that silicate had been successfully doped into nano-hydroxyapatite lattice.In vitro evaluation at the cellular level clearly showed that these Si-doped composites were capable of promoting the adhesion and proliferation of rat mesenchymal stem cells (rMSCs),extremely enhancing osteoblastic differentiation of rMSCs compared with silicon-free composite.More interestingly,we found there was a critical point of silicon content in the composition on regulating multiple cell behaviors.In vivo animal evaluation further demonstrated that Si-doped composites enabled to significantly improve the repair of cranial bone defect.Consequently,our current work not only suggests fabricating a potential bone repair materials by integrating element-doping and molecular assembled strategy in one system,but also paves a new way for constructing multi-functional composite materials in the future.

Watermelon-like iron nanoparticles: Cr doping effect on magnetism and magnetization interaction reversal

Energy Technology Data Exchange (ETDEWEB)

Kaur, Maninder; Dai, Qilin; Bowden, Mark E.; Engelhard, Mark H.; Wu, Yaqiao; Tang, Jinke; Qiang, You

2013-06-26

Chromium (Cr) forms a solid solution with iron (Fe) lattice when doped in core-shell iron -iron oxide nanocluster (NC) and shows a mixed phase of sigma (σ) FeCr and bcc Fe. The Cr dopant affects heavily the magnetization and magnetic reversal process, and causes the hysteresis loop to shrink near the zero field axis. Dramatic transformation happens from dipolar interaction (0 at. % Cr) to strong exchange interaction (8 at. % of Cr) is confirmed from the Henkel plot and delta M plot, and is explained by a water-melon model of core-shell NC system.

Superconductivity in doped two-leg ladder cuprates

International Nuclear Information System (INIS)

Qin Jihong; Yuan Feng; Feng Shiping

2006-01-01

Within the t-J ladder model, superconductivity with a modified d-wave symmetry in doped two-leg ladder cuprates is investigated based on the kinetic energy driven superconducting mechanism. It is shown that the spin-liquid ground-state at the half-filling evolves into the superconducting ground-state upon doping. In analogy to the doping dependence of the superconducting transition temperature in the planar cuprate superconductors, the superconducting transition temperature in doped two-leg ladder cuprates increases with increasing doping in the underdoped regime, and reaches a maximum in the optimal doping, then decreases in the overdoped regime

Striking the Right Balance : Effectiveness of Anti-Doping Policies

NARCIS (Netherlands)

de Hon, O.M.

2016-01-01

Doping, and anti-doping, is in the news on a continuous basis. At the core of these stories and discussions is the question how effective anti-doping policies are to curb the use of doping in sports. Anti-doping policies are based on ethical values, a juridical framework, laboratory analyses,

Erbium-doped phosphate glass waveguide on silicon with 4.1 dB/cm gain at 1.535 µm

Science.gov (United States)

Yan, Y. C.; Faber, A. J.; de Waal, H.; Kik, P. G.; Polman, A.

1997-11-01

Erbium-doped multicomponent phosphate glass waveguides were deposited by rf sputtering techniques. The Er concentration was 5.3×1020cm-3. By pumping the waveguide at 980 nm with a power of ˜21 mW, a net optical gain of 4.1 dB at 1.535 μm was achieved. This high gain per unit length at low pump power could be achieved because the Er-Er cooperative upconversion interactions in this heavily Er-doped phosphate glass are very weak [the upconversion coefficient is (2.0±0.5)×10-18 cm3/s], presumably due to the homogeneous distribution of Er in the glass and due to the high optical mode confinement in the waveguide which leads to high pump power density at low pump power.

A Possibility for Construction of an Iodine Cleaning System Based on Doping for π-Conjugated Polymers

Directory of Open Access Journals (Sweden)

Hiromasa Goto

2011-05-01

Full Text Available An iodine accumulation method using polyaniline (PANI and a textile composite is proposed. PANI/pulp paper sheets prepared by a paper making technique are suitable for iodine adsorption, because of good processability. The PANI-based paper sheets can be applied for iodine cleanup as air filters, water filters, and floorcloth. This concept may lead to a development of an iodine cleaning machine or iodine shield cloth based on π-conjugated polymer composites. In-situ vapor phase doping of iodine, observation of surface images, and IR measurements are carried out to examine iodine doping function for the PANI/pulp paper sheets.

First-principles study of antimony doping effects on the iron-based superconductor CaFe(SbxAs1−x)2

International Nuclear Information System (INIS)

Nagai, Yuki; Nakamura, Hiroki; Machida, Masahiko; Kuroki, Kazuhiko

2015-01-01

We study antimony doping effects on the iron-based superconductor CaFe(Sb x As 1−x ) 2 by using the first-principles calculation. The calculations reveal that the substitution of a doped antimony atom into As of the chainlike As layers is more stable than that into FeAs layers. This prediction can be checked by experiments. Our results suggest that doping homologous elements into the chainlike As layers, which only exist in the novel 112 system, is responsible for rising up the critical temperature. We discuss antimony doping effects on the electronic structure. It is found that the calculated band structures with and without the antimony doping are similar to each other within our framework. (author)

Hybrid Doping of Few-Layer Graphene via a Combination of Intercalation and Surface Doping

KAUST Repository

Mansour, Ahmed

2017-05-23

Surface molecular doping of graphene has been shown to modify its work function and increase its conductivity. However, the associated shifts in work function and increases in carrier concentration are highly coupled and limited by the surface coverage of dopant molecules on graphene. Here we show that few-layer graphene (FLG) can be doped using a hybrid approach, effectively combining surface doping by larger (metal-)organic molecules, while smaller molecules, such as Br2 and FeCl3, intercalate into the bulk. Intercalation tunes the carrier concentration more effectively, whereas surface doping of intercalated FLG can be used to tune its work function without reducing the carrier mobility. This multi-modal doping approach yields a very high carrier density and tunable work function for FLG, demonstrating a new versatile platform for fabricating graphene-based contacts for electronic, optoelectronic and photovoltaic applications.

Hybrid Doping of Few-Layer Graphene via a Combination of Intercalation and Surface Doping

KAUST Repository

Mansour, Ahmed; Kirmani, Ahmad R.; Barlow, Stephen; Marder, Seth R.; Amassian, Aram

2017-01-01

Surface molecular doping of graphene has been shown to modify its work function and increase its conductivity. However, the associated shifts in work function and increases in carrier concentration are highly coupled and limited by the surface coverage of dopant molecules on graphene. Here we show that few-layer graphene (FLG) can be doped using a hybrid approach, effectively combining surface doping by larger (metal-)organic molecules, while smaller molecules, such as Br2 and FeCl3, intercalate into the bulk. Intercalation tunes the carrier concentration more effectively, whereas surface doping of intercalated FLG can be used to tune its work function without reducing the carrier mobility. This multi-modal doping approach yields a very high carrier density and tunable work function for FLG, demonstrating a new versatile platform for fabricating graphene-based contacts for electronic, optoelectronic and photovoltaic applications.

Synthesis and characterization of arsenic-doped cysteine-capped thoria-based nanoparticles

International Nuclear Information System (INIS)

Pereira, F. J.; Díez, M. T.; Aller, A. J.

2013-01-01

Thoria materials have been largely used in the nuclear industry. Nonetheless, fluorescent thoria-based nanoparticles provide additional properties to be applied in other fields. Thoria-based nanoparticles, with and without arsenic and cysteine, were prepared in 1,2-ethanediol aqueous solutions by a simple precipitation procedure. The synthesized thoria-based nanoparticles were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), energy dispersive X-ray spectrometry (ED-XRS), Raman spectroscopy, Fourier transform infrared (FT-IR) spectroscopy and fluorescence microscopy. The presence of arsenic and cysteine, as well as the use of a thermal treatment facilitated fluorescence emission of the thoria-based nanoparticles. Arsenic-doped and cysteine-capped thoria-based nanoparticles prepared in 2.5 M 1,2-ethanediol solutions and treated at 348 K showed small crystallite sizes and strong fluorescence. However, thoria nanoparticles subjected to a thermal treatment at 873 K also produced strong fluorescence with a very narrow size distribution and much smaller crystallite sizes, 5 nm being the average size as shown by XRD and TEM. The XRD data indicated that, even after doping of arsenic in the crystal lattice of ThO 2 , the samples treated at 873 K were phase pure with the fluorite cubic structure. The Raman and FT-IR spectra shown the most characteristics vibrational peaks of cysteine together with other peaks related to the bonds of this molecule to thoria and arsenic when present

Broad spectral response photodetector based on individual tin-doped CdS nanowire

Directory of Open Access Journals (Sweden)

Weichang Zhou

2014-12-01

Full Text Available High purity and tin-doped 1D CdS micro/nano-structures were synthesized by a convenient thermal evaporation method. SEM, EDS, XRD and TEM were used to examine the morphology, composition, phase structure and crystallinity of as-prepared samples. Raman spectrum was used to confirm tin doped into CdS effectively. The effect of impurity on the photoresponse properties of photodetectors made from these as-prepared pure and tin-doped CdS micro/nano-structures under excitation of light with different wavelength was investigated. Various photoconductive parameters such as responsivity, external quantum efficiency, response time and stability were analyzed to evaluate the advantage of doped nanowires and the feasibility for photodetector application. Comparison with pure CdS nanobelt, the tin-doped CdS nanowires response to broader spectral range while keep the excellect photoconductive parameters. Both trapped state induced by tin impurity and optical whispering gallery mode microcavity effect in the doped CdS nanowires contribute to the broader spectral response. The micro-photoluminescence was used to confirm the whispering gallery mode effect and deep trapped state in the doped CdS nanowires.

Density functional theory based study of chlorine doped WS{sub 2}-metal interface

Energy Technology Data Exchange (ETDEWEB)

Chanana, Anuja; Mahapatra, Santanu, E-mail: santanu@dese.iisc.ernet.in [NanoScale Device Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science, Bengaluru, Karnataka 560012 (India)

2016-03-07

Investigation of a transition metal dichalcogenide (TMD)-metal interface is essential for the effective functioning of monolayer TMD based field effect transistors. In this work, we employ the Density Functional Theory calculations to analyze the modulation of the electronic structure of monolayer WS{sub 2} with chlorine doping and the relative changes in the contact properties when interfaced with gold and palladium. We initially examine the atomic and electronic structures of pure and doped monolayer WS{sub 2} supercell and explore the formation of midgap states with band splitting near the conduction band edge. Further, we analyze the contact nature of the pure supercell with Au and Pd. We find that while Au is physiosorbed and forms n-type contact, Pd is chemisorped and forms p-type contact with a higher valence electron density. Next, we study the interface formed between the Cl-doped supercell and metals and observe a reduction in the Schottky barrier height (SBH) in comparison to the pure supercell. This reduction found is higher for Pd in comparison to Au, which is further validated by examining the charge transfer occurring at the interface. Our study confirms that Cl doping is an efficient mechanism to reduce the n-SBH for both Au and Pd, which form different types of contact with WS{sub 2}.

Ba-DOPED ZnO MATERIALS: A DFT SIMULATION TO INVESTIGATE THE DOPING EFFECT ON FERROELECTRICITY

Directory of Open Access Journals (Sweden)

Luis H. da S. Lacerda

2016-04-01

Full Text Available ZnO is a semiconductor material largely employed in the development of several electronic and optical devices due to its unique electronic, optical, piezo-, ferroelectric and structural properties. This study evaluates the properties of Ba-doped wurtzite-ZnO using quantum mechanical simulations based on the Density Functional Theory (DFT allied to hybrid functional B3LYP. The Ba-doping caused increase in lattice parameters and slight distortions at the unit cell angle in a wurtzite structure. In addition, the doping process presented decrease in the band-gap (Eg at low percentages suggesting band-gap engineering. For low doping amounts, the wavelength characteristic was observed in the visible range; whereas, for middle and high doping amounts, the wavelength belongs to the Ultraviolet range. The Ba atoms also influence the ferroelectric property, which is improved linearly with the doping amount, except for doping at 100% or wurtzite-BaO. The ferroelectric results indicate the ZnO:Ba is an strong option to replace perovskite materials in ferroelectric and flash-type memory devices.

Genetic doping and health damages.

Science.gov (United States)

Fallahi, Aa; Ravasi, Aa; Farhud, Dd

2011-01-01

Use of genetic doping or gene transfer technology will be the newest and the lethal method of doping in future and have some unpleasant consequences for sports, athletes, and outcomes of competitions. The World Anti-Doping Agency (WADA) defines genetic doping as "the non-therapeutic use of genes, genetic elements, and/or cells that have the capacity to enhance athletic performance ". The purpose of this review is to consider genetic doping, health damages and risks of new genes if delivered in athletes. This review, which is carried out by reviewing relevant publications, is primarily based on the journals available in GOOGLE, ELSEVIER, PUBMED in fields of genetic technology, and health using a combination of keywords (e.g., genetic doping, genes, exercise, performance, athletes) until July 2010. There are several genes related to sport performance and if they are used, they will have health risks and sever damages such as cancer, autoimmunization, and heart attack.

Effects of the F4TCNQ-Doped Pentacene Interlayers on Performance Improvement of Top-Contact Pentacene-Based Organic Thin-Film Transistors

Directory of Open Access Journals (Sweden)

Ching-Lin Fan

2016-01-01

Full Text Available In this paper, the top-contact (TC pentacene-based organic thin-film transistor (OTFT with a tetrafluorotetracyanoquinodimethane (F4TCNQ-doped pentacene interlayer between the source/drain electrodes and the pentacene channel layer were fabricated using the co-evaporation method. Compared with a pentacene-based OTFT without an interlayer, OTFTs with an F4TCNQ:pentacene ratio of 1:1 showed considerably improved electrical characteristics. In addition, the dependence of the OTFT performance on the thickness of the F4TCNQ-doped pentacene interlayer is weaker than that on a Teflon interlayer. Therefore, a molecular doping-type F4TCNQ-doped pentacene interlayer is a suitable carrier injection layer that can improve the TC-OTFT performance and facilitate obtaining a stable process window.

Effects of the F4TCNQ-Doped Pentacene Interlayers on Performance Improvement of Top-Contact Pentacene-Based Organic Thin-Film Transistors

Science.gov (United States)

Fan, Ching-Lin; Lin, Wei-Chun; Chang, Hsiang-Sheng; Lin, Yu-Zuo; Huang, Bohr-Ran

2016-01-01

In this paper, the top-contact (TC) pentacene-based organic thin-film transistor (OTFT) with a tetrafluorotetracyanoquinodimethane (F4TCNQ)-doped pentacene interlayer between the source/drain electrodes and the pentacene channel layer were fabricated using the co-evaporation method. Compared with a pentacene-based OTFT without an interlayer, OTFTs with an F4TCNQ:pentacene ratio of 1:1 showed considerably improved electrical characteristics. In addition, the dependence of the OTFT performance on the thickness of the F4TCNQ-doped pentacene interlayer is weaker than that on a Teflon interlayer. Therefore, a molecular doping-type F4TCNQ-doped pentacene interlayer is a suitable carrier injection layer that can improve the TC-OTFT performance and facilitate obtaining a stable process window. PMID:28787845

Gene doping.

Science.gov (United States)

Haisma, H J; de Hon, O

2006-04-01

Together with the rapidly increasing knowledge on genetic therapies as a promising new branch of regular medicine, the issue has arisen whether these techniques might be abused in the field of sports. Previous experiences have shown that drugs that are still in the experimental phases of research may find their way into the athletic world. Both the World Anti-Doping Agency (WADA) and the International Olympic Committee (IOC) have expressed concerns about this possibility. As a result, the method of gene doping has been included in the list of prohibited classes of substances and prohibited methods. This review addresses the possible ways in which knowledge gained in the field of genetic therapies may be misused in elite sports. Many genes are readily available which may potentially have an effect on athletic performance. The sporting world will eventually be faced with the phenomena of gene doping to improve athletic performance. A combination of developing detection methods based on gene arrays or proteomics and a clear education program on the associated risks seems to be the most promising preventive method to counteract the possible application of gene doping.

Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias

International Nuclear Information System (INIS)

Pooth, Alexander; Uren, Michael J.; Cäsar, Markus; Kuball, Martin; Martin, Trevor

2015-01-01

Charge trapping and transport in the carbon doped GaN buffer of a GaN-based hetero-structure field effect transistor (HFET) has been investigated under both positive and negative substrate bias. Clear evidence of redistribution of charges in the carbon doped region by thermally generated holes is seen, with electron injection and capture observed during positive bias. Excellent agreement is found with simulations. It is shown that these effects are intrinsic to the carbon doped GaN and need to be controlled to provide reliable and efficient GaN-based power HFETs

Pr3 + -doped GeSx-based glasses for fiber amplifiers at 1.3 µm

Science.gov (United States)

Simons, D. R.; Faber, A. J.; de Waal, H.

1995-03-01

The photoluminescence properties of Pr3+ -doped GeS x -based glasses are studied and compared with those of other sulfide and fluoride glasses. The possibility of highly pump-power-efficient fiber amplifiers based on these GeSx-containing glasses in the telecommunications window at 1.3 mu m is discussed.

Electrochemical reduction induced self-doping of Ti3+ for efficient water splitting performance on TiO2 based photoelectrodes

KAUST Repository

Zhang, Zhonghai

2013-01-01

Hetero-element doping (e.g., N, F, C) of TiO2 is inevitably accompanied by significantly increased structural defects due to the dopants\\' nature being foreign impurities. Very recently, in situ self-doping with homo-species (e.g., Ti3+) has been emerging as a rational solution to enhance TiO2 photoactivity within both UV and visible light regions. Herein we demonstrate that conventional electrochemical reduction is indeed a facile and effective strategy to induce in situ self-doping of Ti3+ into TiO2 and the self-doped TiO2 photoelectrodes showed remarkably improved and very stable water splitting performance. In this study, hierarchical TiO2 nanotube arrays (TiO2 NTs) were chosen as TiO2 substrates and then electrochemically reduced under varying conditions to produce Ti3+ self-doped TiO2 NTs (ECR-TiO2 NTs). The optimized saturation photocurrent density and photoconversion efficiency on the ECR-TiO2 NTs under simulated AM 1.5G illumination were identified to be 2.8 mA cm-2 at 1.23 V vs. RHE and 1.27% respectively, which are the highest values ever reported for TiO 2 based photoelectrodes. The electrochemical impedance spectra measurement confirms that the electrochemical induced Ti3+ self-doping improved the electrical conductivity of the ECR-TiO2 NTs. The versatility and effectiveness of the electrochemical reduction method for Ti3+ self-doping in P25 based TiO2 was also examined and confirmed. This journal is © 2013 the Owner Societies.

Yield strength of a heavily drawn Cu-20% Nb filamentary microcomposite

International Nuclear Information System (INIS)

Hong, S.I.

1998-01-01

It has been well documented that heavily-drawn, copper-niobium microcomposites possess high strength and high conductivity. Since niobium has little solubility in copper, the conductivity of the copper is not strongly affected by the addition of niobium. Following extensive mechanical deformation of Cu-Nb, niobium dendrites transform into fine niobium ribbons as a result of the niobium texture upon drawing. This nanostructure contributes to the ultrahigh strength of Cu-Nb microcomposites. The strength of heavily deformed Cu-Nb exceeds that predicted by the rule-of-mixtures (ROM), and a fundamental understanding of the strengthening mechanisms involved has been the subject of much discussion. Spitzig and his coworkers suggests a barrier strengthening model while Funkenbusch and Courtney believe that stored dislocations have a role in substructural hardening. Hangen and Raabe recently proposed an analytical model for the calculation of the yield strength of Cu-Nb microcomposite. The model of Hangen and Raabe and that of Spitzig and his coworkers have a great deal of resemblance since both models attribute the strength to the difficulty of propagating plastic flow through the interface. The purpose of this study was to enhance the understanding of the strengthening mechanisms associated with Cu-Nb microcomposites by examining the previous studies on mechanical and microstructural stability of Cu-based microcomposites

Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

International Nuclear Information System (INIS)

Chicot, G.; Fiori, A.; Tran Thi, T. N.; Bousquet, J.; Delahaye, J.; Grenet, T.; Eon, D.; Omnès, F.; Bustarret, E.; Volpe, P. N.; Tranchant, N.; Mer-Calfati, C.; Arnault, J. C.; Gerbedoen, J. C.; Soltani, A.; De Jaeger, J. C.; Alegre, M. P.; Piñero, J. C.; Araújo, D.; Jomard, F.

2014-01-01

Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white beam topography. The chemical composition and thickness of these so-called delta-doped structures have been studied by secondary ion mass spectrometry, transmission electron microscopy, and spectroscopic ellipsometry. Temperature-dependent Hall effect and four probe resistivity measurements have been performed on mesa-patterned Hall bars. The temperature dependence of the hole sheet carrier density and mobility has been investigated over a broad temperature range (6 K  2 /Vs, independently of the layer thickness and the substrate type. Comparison with previously published data and theoretical calculations showed that scattering by ionized impurities explained only partially this low common value. None of the delta-layers showed any sign of confinement-induced mobility enhancement, even for thicknesses lower than 2 nm

Microstructure evolution and phase transition in La/Mn doped barium titanate ceramics

Directory of Open Access Journals (Sweden)

Vesna Paunović

2010-12-01

Full Text Available La/Mn codoped BaTiO3 with different La2O3 content, ranging from 0.1 to 5.0 at% La, was investigated regarding their microstructural and dielectric characteristics. The content of 0.05 at% Mn was constant in all investigated samples. The samples were sintered at 1320°C and 1350°C for two hours. Microstructural studies were done using SEM and EDS analysis. The fine-grained microstructure was obtained even for low content of La. The appearance of secondary abnormal grains with serrated features along grain boundaries was observed in 1.0 at% La-BaTiO3 sintered at 1350°C. Nearly flat permittivity-temperature response was obtained in specimens with 2.0 and 5.0 at% La. Using the modified Curie-Weiss law a critical exponent γ and C’were calculated. The obtained values of γ pointed out the diffuse phase transformation in heavily doped BaTiO3 and great departure from the Curie-Weiss law for low doped ceramics.

Characterization of a gamma radiation dosimeter based of glass doped with copper

International Nuclear Information System (INIS)

Laameri, Mohamed Hadi; Ben Mansour, Issam

2010-01-01

Commercial sodo-calcic silicate glass was studied by thermo luminescence in order to evaluate its potential like material sensitive to the gamma radiation for dosimetric application. We have examined in particular the effect of doping glass copper ion exchange C U-N A for different concentrations technique and multiple conditions of doping on luminescent thermo sensitivity on a very wide range of doses ranging from 10 mGy up to 100 kGy. We have also tried to explain the origin of thermoluminescence observed by exploiting the doped and non-doped samples EPR spectra.

Molecular modeling of protonic acid doping of emeraldine base polyaniline for chemical sensors

NARCIS (Netherlands)

Chen, X.; Yuan, C.A.; Wong, C.K.Y.; Ye, H.; Leung, S.Y.Y.; Zhang, G.

2012-01-01

We proposed a molecular modeling methodology to study the protonic acid doping of emeraldine base polyaniline which can used in gas detection. The commercial forcefield COMPASS was used for the polymer and protonic acid molecules. The molecular model, which is capable of representing the polyaniline

High performance supercapacitors based on highly conductive nitrogen-doped graphene sheets.

Science.gov (United States)

Qiu, Yongcai; Zhang, Xinfeng; Yang, Shihe

2011-07-21

Thermal nitridation of reduced graphene oxide sheets yields highly conductive (∼1000-3000 S m(-1)) N-doped graphene sheets, as a result of the restoration of the graphene network by the formation of C-N bonded groups and N-doping. Even without carbon additives, supercapacitors made of the N-doped graphene electrodes can deliver remarkable energy and power when operated at higher voltages, in the range of 0-4 V. This journal is © the Owner Societies 2011

Pr3+-doped GeSx-based glasses for fiber amplifiers at 1.3 mm

NARCIS (Netherlands)

Simons, D.R.; Faber, A.J.; Waal, de H.

1995-01-01

The luminescence of Pr3+-doped GeSx-based glasses were studied and compared with those of other sulfide and fluoride glasses. The possibility of highly pump-power-efficient fiber amplifiers based on these GeSx-contg. glasses in the telecommunications window at 1.3 mm is discussed. [on SciFinder (R)

Operation of heavily irradiated silicon detectors in non-depletion mode

International Nuclear Information System (INIS)

Verbitskaya, E.; Eremin, V.; Ilyashenko, I.; Li, Z.; Haerkoenen, J.; Tuovinen, E.; Luukka, P.

2006-01-01

The non-depletion detector operation mode has generally been disregarded as an option in high-energy physics experiments. In this paper, the non-depletion operation is examined by detailed analysis of the electric field distribution and the current pulse response of heavily irradiated silicon (Si) detectors. The previously reported model of double junction in heavily irradiated Si detector is further developed and a simulation of the current pulse response has been performed. It is shown that detectors can operate in a non-depletion mode due to the fact that the value of the electric field in a non-depleted region is high enough for efficient carrier drift. This electric field originates from the current flow through the detector and a consequent drop of the potential across high-resistivity bulk of a non-depleted region. It is anticipated that the electric field in a non-depleted region, which is still electrically neutral, increases with fluence that improves the non-depleted detector operation. Consideration of the electric field in a non-depleted region allows the explanation of the recorded double-peak current pulse shape of heavily irradiated Si detectors and definition of the requirements for the detector operational conditions. Detailed reconstruction of the electric field distribution gives new information on radiation effects in Si detectors

Doping dependence of the anisotropic quasiparticle interference in NaFe(1-x)Co(x)As iron-based superconductors.

Science.gov (United States)

Cai, Peng; Ruan, Wei; Zhou, Xiaodong; Ye, Cun; Wang, Aifeng; Chen, Xianhui; Lee, Dung-Hai; Wang, Yayu

2014-03-28

We use scanning tunneling microscopy to investigate the doping dependence of quasiparticle interference (QPI) in NaFe1-xCoxAs iron-based superconductors. The goal is to study the relation between nematic fluctuations and Cooper pairing. In the parent and underdoped compounds, where fourfold rotational symmetry is broken macroscopically, the QPI patterns reveal strong rotational anisotropy. At optimal doping, however, the QPI patterns are always fourfold symmetric. We argue this implies small nematic susceptibility and, hence, insignificant nematic fluctuation in optimally doped iron pnictides. Since TC is the highest this suggests nematic fluctuation is not a prerequistite for strong Cooper pairing.

Galvanomagnetic properties and electronic structure of iron-doped PbTe

Energy Technology Data Exchange (ETDEWEB)

Skipetrov, E. P., E-mail: skip@mig.phys.msu.ru [Faculty of Physics, M.V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Faculty of Materials Science, M.V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Kruleveckaya, O. V.; Skipetrova, L. A. [Faculty of Physics, M.V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Knotko, A. V. [Faculty of Materials Science, M.V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Faculty of Chemistry, M.V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Slynko, E. I.; Slynko, V. E. [Institute of Materials Science Problems, National Academy of Sciences of Ukraine, Chernivtsy 58001 (Ukraine)

2015-11-21

We synthesize an iron-doped PbTe single-crystal ingot and investigate the phase composition and distribution of the iron impurity along the ingot as well as galvanomagnetic properties in weak magnetic fields (4.2 K ≤ T ≤ 300 K, B ≤ 0.07 T) of Pb{sub 1−y}Fe{sub y}Te alloys. We find microscopic inclusions enriched with iron and regions with a chemical composition close to FeTe in the heavily doped samples, while the iron impurity content in the main phase rises only slightly along the length of the ingot reaching the impurity solubility limit at approximately 0.6 mol. %. Samples from the initial and the middle parts of the ingot are characterized by p-type metal conductivity. An increase of the iron impurity content leads to a decrease in the free hole concentration and to a stabilization of galvanomagnetic parameters due to the pinning of the Fermi level by the iron resonant impurity level E{sub Fe} lying under the bottom of the valence band (E{sub v} − E{sub Fe} ≈ 16 meV). In the samples from the end of the ingot, a p-n inversion of the conductivity type and an increase of the free electron concentration along the ingot are revealed despite the impurity solubility limit being reached. The kinetics of changes of charge carrier concentration and of the Fermi energy along the ingot is analyzed in the framework of the six-band Dimmock dispersion relation. A model is proposed for the electronic structure rearrangement of Pb{sub 1−y}Fe{sub y}Te with doping, which may also be used for PbTe doped with other transition metals.

New Polymer Electrolyte Membranes Based on Acid Doped PBI For Fuel Cells Operating above 100°C

DEFF Research Database (Denmark)

Li, Qingfeng

2003-01-01

The technical achievement and challenges for the PEMFC technology based on perfluorosulfonic acid (PFSA) polymer membranes (e.g. Nafion®) are briefly discussed. The newest development for alternative polymer electrolytes for operation above 100°C. As one of the successful approaches to high...... operational temperatures, the development and evaluation of acid doped PBI membranes are reviewed, covering polymer synthesis, membrane casting, acid doping, physiochemical characterization and fuel cell tests....

Bragg-grating-based rare-earth-ion-doped channel waveguide lasers and their applications

NARCIS (Netherlands)

Bernhardi, Edward

2012-01-01

The research presented in this thesis concerns the investigation and development of Bragggrating-based integrated cavities for the rare-earth-ion-doped Al2O3 (aluminium oxide) waveguide platform, both from a theoretical and an experimental point of view, with the primary purpose of realizing

Influences of Mg Doping on the Electrochemical Performance of TiO2 Nanodots Based Biosensor Electrodes

Directory of Open Access Journals (Sweden)

M. S. H. Al-Furjan

2014-01-01

Full Text Available Electrochemical biosensors are essential for health monitors to help in diagnosis and detection of diseases. Enzyme adsorptions on biosensor electrodes and direct electron transfer between them have been recognized as key factors to affect biosensor performance. TiO2 has a good protein adsorption ability and facilitates having more enzyme adsorption and better electron transfer. In this work, Mg ions are introduced into TiO2 nanodots in order to further improve electrode performance because Mg ions are considered to have good affinity with proteins or enzymes. Mg doped TiO2 nanodots on Ti substrates were prepared by spin-coating and calcining. The effects of Mg doping on the nanodots morphology and performance of the electrodes were investigated. The density and size of TiO2 nanodots were obviously changed with Mg doping. The sensitivity of 2% Mg doped TiO2 nanodots based biosensor electrode increased to 1377.64 from 897.8 µA mM−1 cm−2 and its KMapp decreases to 0.83 from 1.27 mM, implying that the enzyme achieves higher catalytic efficiency due to better affinity of the enzyme with the Mg doped TiO2. The present work could provide an alternative to improve biosensor performances.

Record power, ultra-broadband supercontinuum source based on highly GeO2 doped silica fiber

DEFF Research Database (Denmark)

Jain, Deepak; Sidharthan, R.; Moselund, Peter M.

2016-01-01

the potential of germania based photonic crystal fiber or a step-index fiber supercontinuum source for high power ultra-broad band emission being by pumped a 1060 nm or a 1550 nm laser source. To the best of our knowledge, this is the record power, ultra-broadband, and all-fiberized supercontinuum light source...... based on silica and germania fiber ever demonstrated to the date. (C) 2016 Optical Society of America......We demonstrate highly germania doped fibers for mid-infrared supercontinuum generation. Experiments ensure a highest output power of 1.44 W for a broadest spectrum from 700 nm to 3200 nm and 6.4 W for 800 nm to 2700 nm from these fibers, while being pumped by a broadband Erbium-Ytterbium doped...

Nanodiamonds for device applications: An investigation of the properties of boron-doped detonation nanodiamonds.

Science.gov (United States)

Afandi, Abdulkareem; Howkins, Ashley; Boyd, Ian W; Jackman, Richard B

2018-02-19

The inclusion of boron within nanodiamonds to create semiconducting properties would create a new class of applications in the field of nanodiamond electronics. Theoretical studies have differed in their conclusions as to whether nm-scale NDs would support a stable substitutional boron state, or whether such a state would be unstable, with boron instead aggregating or attaching to edge structures. In the present study detonation-derived NDs with purposefully added boron during the detonation process have been studied with a wide range of experimental techniques. The DNDs are of ~4 nm in size, and have been studied with CL, PL, Raman and IR spectroscopies, AFM and HR-TEM and electrically measured with impedance spectroscopy; it is apparent that the B-DNDs studied here do indeed support substitutional boron species and hence will be acting as semiconducting diamond nanoparticles. Evidence for moderate doping levels in some particles (~10 17 B cm -3 ), is found alongside the observation that some particles are heavily doped (~10 20 B cm -3 ) and likely to be quasi-metallic in character. The current study has therefore shown that substitutional boron doping in nm NDs is in fact possible, opening-up the path to a whole host of new applications for this interesting class of nano-particles.

Knowledge of pharmacy students about doping, and the need for doping education: a questionnaire survey.

Science.gov (United States)

Shibata, Keita; Ichikawa, Koichi; Kurata, Naomi

2017-08-11

Anti-doping activities are carried out on a global scale. Based on these activities, the specialty of "sports pharmacist," which entails a deeper comprehension of doping, use of supplements, and appropriate drug use for athletes, was established in 2009 in Japan. It is difficult to say whether the education on doping is adequate for pharmacy students who will be eligible to become sports pharmacists. It is also unclear how well these students understand doping. Therefore, the aim of this study was to investigate pharmacy students' current knowledge of appropriate drug use, doping and use of supplements, and to explore the need for further education on these topics. A questionnaire survey was conducted from July 3rd to August 2nd in 2014 at Showa University in Japan. A total of 406 respondents (2nd- to 6th-year students) were assessed as eligible. Group comparison was used to compare those who had attended a lecture about doping and those who had not. Most of the students only knew the word doping and had not attended a lecture on the subject, but 72% of them expressed a desire to attend one. Over half did not know that the most common doping violation in Japan is unintentional doping, and were unfamiliar with certain past cases of doping. In addition, 41% did not know that over-the-counter medicines and dietary supplements might contain prohibited substances, and 87% were unaware that names of prohibited substances might not appear on the ingredient labels of dietary supplements. In contrast, attending a lecture on doping was effective in facilitating the acquisition of all these types of knowledge. It is important to provide more opportunities for appropriate education of pharmacy students on the topic of doping, given that interest exists and attending a lecture on the topic appears to be useful. More education about doping for pharmacy students would be as effective for anti-doping activities as is education of athletes.

Doping dependence of charge order in electron-doped cuprate superconductors

Science.gov (United States)

Mou, Yingping; Feng, Shiping

2017-12-01

In the recent studies of the unconventional physics in cuprate superconductors, one of the central issues is the interplay between charge order and superconductivity. Here the mechanism of the charge-order formation in the electron-doped cuprate superconductors is investigated based on the t-J model. The experimentally observed momentum dependence of the electron quasiparticle scattering rate is qualitatively reproduced, where the scattering rate is highly anisotropic in momentum space, and is intriguingly related to the charge-order gap. Although the scattering strength appears to be weakest at the hot spots, the scattering in the antinodal region is stronger than that in the nodal region, which leads to the original electron Fermi surface is broken up into the Fermi pockets and their coexistence with the Fermi arcs located around the nodal region. In particular, this electron Fermi surface instability drives the charge-order correlation, with the charge-order wave vector that matches well with the wave vector connecting the hot spots, as the charge-order correlation in the hole-doped counterparts. However, in a striking contrast to the hole-doped case, the charge-order wave vector in the electron-doped side increases in magnitude with the electron doping. The theory also shows the existence of a quantitative link between the single-electron fermiology and the collective response of the electron density.

Ultrasensitive ppb-level NO2 gas sensor based on WO3 hollow nanosphers doped with Fe

Science.gov (United States)

Zhang, Ziyue; haq, Mahmood; Wen, Zhen; Ye, Zhizhen; Zhu, Liping

2018-03-01

WO3 mesoporous hollow nanospheres doped with Fe synthesized by a facile method have mesoporous hollow nanospherical like morphology, small grain size (10 nm), high crystalline quality and ultrahigh surface area (165 m2/g). XRD spectra and Raman spectra indicate the Fe doping leading to the smaller cell parameters as compared to pure WO3, and the slight distortion in the crystal lattice produces a number of defects, making it a better candidate for gas sensing. XPS analysis shows that Fe-doped WO3 mesoporous hollow nanospheres have more oxygen vacancies than pure WO3, which is beneficial to the adsorption of oxygen and NO2 and its surface reaction. The gas sensor based on Fe-WO3 exhibited excellent low ppb-level (10 ppb) NO2 detecting performance and outstanding selectivity.

All ITO-based transparent resistive switching random access memory using oxygen doping method

International Nuclear Information System (INIS)

Kim, Hee-Dong; Yun, Min Ju; Kim, Sungho

2015-01-01

Recently, transparent memory would be useful in invisible electronics. In this work, for the first time we present a feasibility of stable unipolar resistive switching (RS) characteristics with reset current of sub-micron ampere for the fully transparent ITO/oxygen-doped ITO/ITO memory capacitors, i.e., all ITO structures, produced by sputtering method, which shows a high optical transmittance of approximately 80% in the visible region as well as near ultra-violet region. In addition, in a RS test to evaluate a reliability for the proposed memory devices, we observed a stable endurance of >100 cycles and a retention time of >10 4  s at 85 °C, with a current ratio of ∼10 2 to ∼10 3 . This result indicates that this transparent memory by engineering the amount of oxygen ions within the ITO films could be a milestone for future see-through electronic devices. - Highlights: • The resistive switching characteristics of the transparent ITO/O-doped ITO/ITO RRAM cells have investigated. • All ITO-based RRAM cell is achieved using oxygen doping method. • Good endurance and long retention time were observed.

Preparation of Polyaniline-Doped Fullerene Whiskers

Directory of Open Access Journals (Sweden)

Bingzhe Wang

2013-01-01

Full Text Available Fullerene C60 whiskers (FWs doped with polyaniline emeraldine base (PANI-EB were synthesized by mixing PANI-EB/N-methyl pyrrolidone (NMP colloid and FWs suspension based on the nature of the electron acceptor of C60 and electron donor of PANI-EB. Scanning electron microscopy (SEM, Fourier transform infrared (FT-IR, and ultraviolet-visible (UV-Vis spectra characterized the morphology and molecular structure of the FWs doped with PANI-EB. SEM observation showed that the smooth surface of FWs was changed to worm-like surface morphology after being doped with PANI-EB. The UV-Vis spectra suggested that charge-transfer (CT complex of C60 and PANI-EB was formed as PANI-EBδ+-C60δ-. PANI-EB-doped FWs might be useful as a new type of antibacterial and self-cleaning agent as well as multifunctional material to improve the human health and living environment.

Electronic Raman response in electron-doped cuprate superconductors

International Nuclear Information System (INIS)

Geng Zhihao; Feng Shiping

2012-01-01

The electronic Raman response in the electron-doped cuprate superconductors is studied based on the t-t'-J model. It is shown that although the domelike shape of the doping dependent peak energy in the B 2g symmetry is a common feature for both electron-doped and hole-doped cuprate superconductors, there are pronounced deviations from a cubic response in the B 2g channel and a linear response in the B 2g channel for the electron-doped case in the low energy limit. It is also shown that these pronounced deviations are mainly caused by a nonmonotonic d-wave gap in the electron-doped cuprate superconductors.

A pure silica ytterbium-doped sol–gel-based fiber laser

International Nuclear Information System (INIS)

Baz, Assaad; El Hamzaoui, Hicham; Fsaifes, Ihsan; Bouwmans, Géraud; Bouazaoui, Mohamed; Bigot, Laurent

2013-01-01

In this letter it is demonstrated that the sol–gel route combined with fiber fabrication by the stack and draw method can be used to realize efficient fiber lasers. More precisely, a pure silica ytterbium-doped photonic crystal fiber with a core obtained by the sol–gel polymeric technique is studied, and a laser efficiency of more than 73% is achieved for a laser emission around 1034 nm. The optical and spectroscopic properties of the monolith and fiber are investigated, together with the sensitivity of the fiber to photodarkening. The dimensions of the ytterbium-doped monolith combined with the uniform doping and refractive index that are reported make this technique particularly interesting for the realization of large-mode area fibers. (letter)

Heavy Mg-doping of (Al,Ga)N films for potential applications in deep ultraviolet light-emitting structures

Science.gov (United States)

Liang, Y. H.; Towe, E.

2018-03-01

Doping of high aluminum-containing (Al,Ga)N thin films has remained a challenging problem that has hindered progress in the development of deep ultraviolet light-emitters. This paper reports on the synthesis and use of heavily doped (Al,Ga)N films in deep ultraviolet (˜274 nm) light-emitting structures; these structures were synthesized by molecular beam epitaxy under liquid-metal growth conditions that facilitate the incorporation of extremely high density of Mg dopant impurities (up to 5 × 1019 cm-3) into aluminum-rich (Al,Ga)N thin films. Prototypical light-emitting diode structures incorporating Al0.7Ga0.3N films doped with Mg impurities that ionize to give free hole carrier concentrations of up to 6 × 1017 cm-3 exhibit external quantum efficiencies of up 0.56%; this is an improvement from previous devices made from molecular beam epitaxy-grown materials. This improvement is believed to be due to the high hole carrier concentration enabled by the relatively low activation energy of 220 meV compared to the expected values of 408-507 meV for Al0.7Ga0.3N films.

Nitrogen-doped graphene forests as electrodes for high-performance wearable supercapacitors

International Nuclear Information System (INIS)

Wang, Mei; Ma, Yifei

2017-01-01

Highlights: •N-doped graphene forest (GF) is successfully synthesized by in-situ PECVD process. •Morphology of N-doped GF electrode realizes a better in-plane electron transfer. •Areal and volumetric capacitances increase 26% and 89% by the N-doping of GF. •Energy and power densities increase 87% and 50% by the N-doping of GF. •The N-doped GF-based EDLC shows excellent bendability and reliable durability. -- Abstract: Recently, a graphene forest (GF) is synthesized by a plasma enhanced chemical vapor deposition (PECVD) process, which subverts the stereotyped morphology of vertical graphene. The GF is demonstrated to possess excellent performance in flexible and bendable electrical double-layer capacitors (EDLCs). In this work, synthesis process of the GF has been optimized and N-doped GF is successfully achieved by introducing NH 3 as the nitrogen precursor during the PECVD process. The N-doping obviously affects the morphology of the GF and the in-plane conductivity of GF is desirably enhanced. The specific area capacitances and volumetric capacitances of N-doped GF-based EDLC increases 26% and 89% in average, respectively, at different current densities compared with the non-doped GF-based EDLC. In addition, both the energy and power densities are improved, and impressively, the energy densities improve 87% by the N-doping of GF electrodes. The GF-based EDLC also provides the desirable stability that no degradation can be observed within 10,000 cycles. Finally, the flexible N-doped GF-based EDLC is also tested as a wearable supercapacitor, exhibiting no capacitance decrease under the dynamic bending situation. Our approach to synthesize the N-doped GF electrodes can achieve the fine-scale nano-structured GF electrodes and provide a new way forward for improved energy storage devices.

Long-Life Lithium-Sulfur Battery Derived from Nori-Based Nitrogen and Oxygen Dual-Doped 3D Hierarchical Biochar.

Science.gov (United States)

Wu, Xian; Fan, Lishuang; Wang, Maoxu; Cheng, Junhan; Wu, Hexian; Guan, Bin; Zhang, Naiqing; Sun, Kening

2017-06-07

Due to restrictions on the low conductivity of sulfur and soluble polysulfides during discharge, lithium sulfur batteries are unsuitable for further large scale applications. The current carbon based cathodes suffer from poor cycle stability and high cost. Recently, heteroatom doped carbons have been considered as a settlement to enhance the performance of lithium sulfur batteries. With this strategy, we report the low cost activated nori based N,O-doped 3D hierarchical carbon material (ANC) as a sulfur host. The N,O dual-doped ANC reveals an elevated electrochemical performance, which exhibits not only a good rate performance over 5 C, but also a high sulfur content of 81.2%. Further importantly, the ANC represents an excellent cycling stability, the cathode reserves a capacity of 618 mAh/g at 2 C after 1000 cycles, which shows a 0.022% capacity decay per cycle.

Supercapacitors based on nitrogen-doped reduced graphene oxide and borocarbonitrides

Science.gov (United States)

Gopalakrishnan, K.; Moses, Kota; Govindaraj, A.; Rao, C. N. R.

2013-12-01

Nitrogen-doped reduced graphene oxide (RGO) samples with different nitrogen content, prepared by two different methods, as well as nitrogen-doped few-layer graphene have been investigated as supercapacitor electrodes. Two electrode measurements have been carried out both in aqueous (6M KOH) and in ionic liquid media. Nitrogen-doped reduced graphene oxides exhibit satisfactory specific capacitance, the values reaching 126F/g at a scan rate of 10mV/s in aqueous medium. Besides providing supercapacitor characteristics, the study has shown the nitrogen content and surface area to be important factors. High surface-area borocarbonitrides, BxCyNz, prepared by the urea route appear to be excellent supercapacitor electrode materials. Thus, BC4.5N exhibits a specific capacitance of 169F/g at a scan rate of 10mV/s in aqueous medium. In an ionic liquid medium, nitrogen-doped RGO and BC4.5N exhibit specific capacitance values of 258F/g and 240F/g at a scan rate of 5mV/s. The ionic liquid enables a larger operating voltage range of 0.0-2.5V compared to 0.0-1V in aqueous medium.

Effect of cadmium doping on some properties of glass-insulated bismuth-based microwires

International Nuclear Information System (INIS)

Meglei, D.; Dyntu, M.

2011-01-01

Full text: According to the literature, semiconductor converters based on films and wire crystals are widely used in present-day microelectronics. However, the production of efficient semiconductor converters requires crystals of high structural perfection with a given composition and desired electrical and mechanical properties. In this work, we describe the study of the perfection of the microstructure and mechanical properties of glass-insulated microwires based on Bi doped with cadmium (Cd) and the technique of preparation of micro resistors suitable for instrumentation applications. Microscopic studies of ground, polished, and chemically etched microwires doped with cadmium showed that they have smooth cylindrical surfaces in the entire range of diameters. Sizes of defects in the form of micropores, microcracks, dislocations, and twins on their surface are much smaller than those of pure bismuth microwire. It is also found that the tendency to twinning and the number and size of surface defects decrease with decreasing diameters; at the same time, their homogeneity increases. The tensile strength of the studied microwires with glass insulation is high for all tested diameters and ranges within 33.274.1 kg/mm with respect to internal diameters of 5.6 21.2 m; in addition, they withstand a breaking force up to 130 g and more, whereas the samples of pure bismuth microwires withstood a force up to 80 g. It is also found that the tensile strength of cadmium doped microwires is significantly higher than that of undoped samples. The bending strength as a measure of elasticity was determined using a special installation according to the critical bending radius of the sample at which the sample integrity is violated. The results of bending tests showed that, with increasing diameter of the doped samples, the critical radius linearly increases; that is, in this case, the elasticity increases with decreasing diameter. Metallographic analysis revealed that cadmium in the

Remote Excavation of Heavily Contaminated UXO Sites. The Range Master

National Research Council Canada - National Science Library

Crandall, Alan L

2007-01-01

USA Environmental, Inc., and Timberline Environmental Services, Inc., developed the Range Master, a remote controlled scraper with an integrated power screen, to excavate and sift the top 12 inches of heavily contaminated UXO sites...

Ionically conducting Er3+-doped DNA-based biomembranes for electrochromic devices

International Nuclear Information System (INIS)

Leones, R.; Fernandes, M.; Sentanin, F.; Cesarino, I.; Lima, J.F.; Zea Bermudez, V. de; Pawlicka, A.; Magon, C.J.; Donoso, J.P.; Silva, M.M.

2014-01-01

Biopolymer-based membranes have particular interest due to their biocompatibility, Biodegradability, easy extraction from natural resources and low cost. The incorporation of Er 3+ ions into natural macromolecule hosts with the purpose of producing highly efficient emitting phosphors is of widespread interest in materials science, due to their important roles in display devices. Thus, biomembranes may be viewed as innovative materials for the area of optics. This paper describes studies of luminescent material DNA-based membranes doped with erbium triflate and demonstrates that their potential technological applications may be expanded to electrochromic devices. The sample that exhibits the highest ionic conductivity is DNA 10 Er, (1.17 × 10 −5 and 7.76 × 10 −4 S.cm −1 at 30 and 100 °C, respectively). DSC, XRD and POM showed that the inclusion of the guest salt into DNA does not change significantly its amorphous nature. The overall redox stability was ca. 2.0 V indicating that these materials have an acceptable stability window for applications in solid state electrochemical devices. The EPR analysis suggested that the Er 3+ ions are distributed in various environments. A small ECD comprising a Er 3+ -doped DNA-based membrane was assembled and tested by cyclic voltammetry and chronoamperometry. These electrochemical analyses revealed a pale blue color to transparent color change and a decrease of the charge density from -4.0 to -1.2 mC.cm −2 during 4000 color/bleaching cycles

Electrochemical Decontamination of Painted and Heavily Corroded Metals

International Nuclear Information System (INIS)

Marczak, S.; Anderson, J.; Dziewinski, J.

1998-01-01

The radioactive metal wastes that are generated from nuclear fuel plants and radiochemical laboratories are mainly contaminated by the surface deposition of radioactive isotopes. There are presently several techniques used in removing surface contamination involving physical and chemical processes. However, there has been very little research done in the area of soiled, heavily oxidized, and painted metals. Researchers at Los Alamos National Laboratory have been developing electrochemical procedures for the decontamination of bare and painted metal objects. These methods have been found to be effective on highly corroded as well as relatively new metals. This study has been successful in decontaminating projectiles and shrapnel excavated during environmental restoration projects after 40+ years of exposure to the elements. Heavily corroded augers used in sampling activities throughout the area were also successfully decontaminated. This process has demonstrated its effectiveness and offers several advantages over the present metal decontamination practices of media blasting and chemical solvents. These advantages include the addition of no toxic or hazardous chemicals, low operating temperature and pressure, and easily scaleable equipment. It is in their future plans to use this process in the decontamination of gloveboxes destined for disposal as TRU waste

Reduced-graphene-oxide supported tantalum-based electrocatalysts: Controlled nitrogen doping and oxygen reduction reaction

Science.gov (United States)

Yang, Xiaoyun; Mo, Qijie; Guo, Yulin; Chen, Nana; Gao, Qingsheng

2018-03-01

Controlled N-doping is feasible to engineer the surface stoichiometry and the electronic configuration of metal-oxide electrocatalysts toward efficient oxygen reduction reactions (ORR). Taking reduced graphene oxide supported tantalum-oxides (TaOx/RGO) for example, this work illustrated the controlled N-doping in both metal-oxides and carbon supports, and the contribution to the improved ORR activity. The active N-doped TaOx/RGO electrocatalysts were fabricated via SiO2-assisted pyrolysis, in which the amount and kind of N-doping were tailored toward efficient electrocatalysis. The optimal nanocomposites showed a quite positive half-wave potential (0.80 V vs. RHE), the excellent long-term stability, and the outstanding tolerance to methanol crossing. The improvement in ORR was reasonably attributed to the synergy between N-doped TaOx and N-doped RGO. Elucidating the importance of controlled N-doping for electrocatalysis, this work will open up new opportunities to explore noble-metal-free materials for renewable energy applications.

Optical study of Erbium-doped-porous silicon based planar waveguides

Energy Technology Data Exchange (ETDEWEB)

Najar, A. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B.P. 80518, 22305 Lannion Cedex (France) and Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 ElManar, Tunis (Tunisia)]. E-mail: najar.adel@laposte.net; Ajlani, H. [Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 ElManar, Tunis (Tunisia); Charrier, J. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B.P. 80518, 22305 Lannion Cedex (France); Lorrain, N. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B.P. 80518, 22305 Lannion Cedex (France); Haesaert, S. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B.P. 80518, 22305 Lannion Cedex (France); Oueslati, M. [Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 ElManar, Tunis (Tunisia); Haji, L. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B.P. 80518, 22305 Lannion Cedex (France)

2007-06-15

Planar waveguides were formed from porous silicon layers obtained on P{sup +} substrates. These waveguides were then doped by erbium using an electrochemical method. Erbium concentration in the range 2.2-2.5 at% was determined by energy dispersive X-ray (EDX) analysis performed on SEM cross sections. The refractive index of layers was studied before and after doping and thermal treatments. The photoluminescence of Er{sup 3+} ions in the IR range and the decay curve of the 1.53 {mu}m emission peak were studied as a function of the excitation power. The value of excited Er density was equal to 0.07%. Optical loss contributions were analyzed on these waveguides and the losses were equal to 1.1 dB/cm at 1.55 {mu}m after doping.

Magnetic properties of Fe-doped organic-inorganic nanohybrids

Science.gov (United States)

Silva, N. J. O.; Amaral, V. S.; Carlos, L. D.; de Zea Bermudez, V.

2003-05-01

We present a magnetic study of Fe-doped diureasils (siloxane-based networks to which poly(ethylene oxide)-based chains are grafted by urea cross linkages doped with Fe(II) or Fe(III) ions. Structural studies show that the Fe(II) ions interact mainly with the organic chain, whereas the incorporation of Fe(III) leads to the formation of iron-based nanoclusters, with radius increasing from 20 to 40 Å. Fe(II)-doped samples behave as simple paramagnets, with μeff=5.32μB. Fe(III)-doped hybrids present antiferromagnetic interactions, with TN increasing with Fe(III) concentration up to 13.6 K for 6% doping. Thermal irreversibility was observed below ˜40 K and is stronger for higher concentrations. The coercive fields (HC) are of the order of 1000 Oe at 5 K. Hysteresis cycles are shifted to negative fields, revealing the presence of exchange anisotropy interactions with exchange fields (HE) of the order of 100 Oe. Both fields decrease rapidly with increasing temperature. We analyze this behavior in terms of the contribution of surface spin disorder to exchange anisotropy.

Laboratory-based recording of holographic fine structure in X-ray absorption anisotropy using polycapillary optics

Energy Technology Data Exchange (ETDEWEB)

Dabrowski, K.M. [Institute of Physics, Jagiellonian University, Reymonta 4, 30-059 Krakow (Poland); Korecki, P., E-mail: pawel.korecki@uj.edu.pl [Institute of Physics, Jagiellonian University, Reymonta 4, 30-059 Krakow (Poland)

2012-08-15

Highlights: Black-Right-Pointing-Pointer Holographic fine structures in X-ray absorption recorded using a tabletop setup. Black-Right-Pointing-Pointer Setup based on polycapillary collimating optics and an HOPG crystal. Black-Right-Pointing-Pointer Demonstration of element sensitivity by detection of X-ray fluorescence. Black-Right-Pointing-Pointer Potential of laboratory-based experiments for heavily doped crystals and thin films. - Abstract: A tabletop setup composed of a collimating polycapillary optics and a highly oriented pyrolytic graphite monochromator (HOPG) was characterized and used for recording two-dimensional maps of X-ray absorption anisotropy (XAA). XAA originates from interference of X-rays directly inside the sample. Depending on experimental conditions, fine structures in XAA can be interpreted in terms of X-ray holograms or X-ray standing waves and can be used for an element selective atomic-resolved structural analysis. The implementation of polycapillary optics resulted in a two-order of magnitude gain in the radiant intensity (photons/s/solid angle) as compared to a system without optics and enabled efficient recording of XAA with a resolution of 0.15 Degree-Sign for Mo K{alpha} radiation. Element sensitivity was demonstrated by acquisition of distinct XAA signals for Ga and As atoms in a GaAs (1 1 1) wafer by using X-ray fluorescence as a secondary signal. These results indicate the possibility of performing laboratory-based XAA experiments for heavily doped single crystals or thin films. So far, because of the weak holographic modulation of XAA, such experiments could be only performed using synchrotron radiation.

Effect of Sn doping on the room temperature magnetodielectric properties of yttrium iron garnet

Energy Technology Data Exchange (ETDEWEB)

Zhang, Zhizhi; Chen, Fu; Li, Junnan; Feng, Zekun; Nie, Yan, E-mail: nieyan@hust.edu.cn [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan (China)

2015-10-21

The structures, magnetic properties, permittivity spectra, and magnetodielectric (MD) effects of polycrystalline Y{sub 3}Fe{sub 5−x}Sn{sub x}O{sub 12} compounds prepared by solid state reactions were systematically investigated. The substitution of Sn{sup 4+} leads to lattice expansion and the donation of excess electrons in ceramics, which affects the concentration of Fe{sup 2+}, space charge, and electric dipole. As a result, as the amount of Sn dopant increases, so does saturation magnetization and permittivity in the low frequency band. The MD coefficient ([ε{sub r}(H) − ε{sub r}(0)]/ε{sub r}(0)) of lightly doped samples (x ≤ 0.05) is negative in the entire frequency band, reaching −2.3% at 350 MHz and 0.6 T for Y{sub 3}Fe{sub 4.95}Sn{sub 0.05}O{sub 12} ceramics. The MD coefficient of heavily doped samples (x > 0.05) is positive in the low frequency band, reaching 0.83% at 10 MHz and 0.6 T for Y{sub 3}Fe{sub 4.925}Sn{sub 0.075}O{sub 12} ceramics, and then decreasing with the increasing frequency, gradually becoming negative in the high frequency band. A detailed explanation is provided based on the origin of permittivity. This study provides a new methodology according to which the MD materials may be designed in order to satisfy the requirements of engineering applications.

Calcium decorated and doped phosphorene for gas adsorption

Energy Technology Data Exchange (ETDEWEB)

Lalitha, Murugan; Nataraj, Yuvarani; Lakshmipathi, Senthilkumar, E-mail: lsenthilkumar@buc.edu.in

2016-07-30

Highlights: • Phosphorene exhibits n-type/p-type nature on decorating/doping calcium respectively. • Gas molecules (CH{sub 4}, CO{sub 2}, H{sub 2} and NH{sub 3}) are physisorbed on phosphorene. • Ca decorated Phosphorene is recommended for high density hydrogen storage applications. • Calcium doping on zigzag and armchair sites makes phosphorene more reactive. • CH{sub 4}, CO{sub 2}, H{sub 2} prefer Ca-doped on zigzag1 site, whereas ammonia prefers Ca-doped on armchair. - Abstract: In this paper, we present the results from first-principles study based on the electronic structure and adsorption characteristics of CH{sub 4}, CO{sub 2}, H{sub 2} and NH{sub 3} adsorbed on Ca decorated/doped phosphorene. Our study finds that phosphorene exhibits n-type behaviour on decorating calcium, and p-type on doping calcium. Gas molecules are physisorbed on both pristine and calcium-mediated phosphorene, visible through their lower binding energy and charge transfer values. Ca decorated phosphorene is suitable for hydrogen storage due to its higher binding energy for H{sub 2}. Ca doped structures shows increased binding affinity towards CH{sub 4} and NH{sub 3} in zigzag1 direction and armchair directions respectively. The extracts of our study implies that Ca doped phosphorene possess increased binding affinity towards gas molecules, and the results are highly helpful for gas adsorption and to design gas sensors based on calcium doped or decorated phosphorene.

Developing strategies for detection of gene doping.

Science.gov (United States)

Baoutina, Anna; Alexander, Ian E; Rasko, John E J; Emslie, Kerry R

2008-01-01

It is feared that the use of gene transfer technology to enhance athletic performance, the practice that has received the term 'gene doping', may soon become a real threat to the world of sport. As recognised by the anti-doping community, gene doping, like doping in any form, undermines principles of fair play in sport and most importantly, involves major health risks to athletes who partake in gene doping. One attraction of gene doping for such athletes and their entourage lies in the apparent difficulty of detecting its use. Since the realisation of the threat of gene doping to sport in 2001, the anti-doping community and scientists from different disciplines concerned with potential misuse of gene therapy technologies for performance enhancement have focused extensive efforts on developing robust methods for gene doping detection which could be used by the World Anti-Doping Agency to monitor athletes and would meet the requirements of a legally defensible test. Here we review the approaches and technologies which are being evaluated for the detection of gene doping, as well as for monitoring the efficacy of legitimate gene therapy, in relation to the detection target, the type of sample required for analysis and detection methods. We examine the accumulated knowledge on responses of the body, at both cellular and systemic levels, to gene transfer and evaluate strategies for gene doping detection based on current knowledge of gene technology, immunology, transcriptomics, proteomics, biochemistry and physiology. (c) 2008 John Wiley & Sons, Ltd.

Doping graphene films via chemically mediated charge transfer

Directory of Open Access Journals (Sweden)

Ishikawa Ryousuke

2011-01-01

Full Text Available Abstract Transparent conductive films (TCFs are critical components of a myriad of technologies including flat panel displays, light-emitting diodes, and solar cells. Graphene-based TCFs have attracted a lot of attention because of their high electrical conductivity, transparency, and low cost. Carrier doping of graphene would potentially improve the properties of graphene-based TCFs for practical industrial applications. However, controlling the carrier type and concentration of dopants in graphene films is challenging, especially for the synthesis of p-type films. In this article, a new method for doping graphene using the conjugated organic molecule, tetracyanoquinodimethane (TCNQ, is described. Notably, TCNQ is well known as a powerful electron accepter and is expected to favor electron transfer from graphene into TCNQ molecules, thereby leading to p-type doping of graphene films. Small amounts of TCNQ drastically improved the resistivity without degradation of optical transparency. Our carrier doping method based on charge transfer has a huge potential for graphene-based TCFs.

All fiber passively mode locked zirconium-based erbium-doped fiber laser

Science.gov (United States)

Ahmad, H.; Awang, N. A.; Paul, M. C.; Pal, M.; Latif, A. A.; Harun, S. W.

2012-04-01

All passively mode locked erbium-doped fiber laser with a zirconium host is demonstrated. The fiber laser utilizes the Non-Linear Polarization Rotation (NPR) technique with an inexpensive fiber-based Polarization Beam Splitter (PBS) as the mode-locking element. A 2 m crystalline Zirconia-Yttria-Alumino-silicate fiber doped with erbium ions (Zr-Y-Al-EDF) acts as the gain medium and generates an Amplified Spontaneous Emission (ASE) spectrum from 1500 nm to 1650 nm. The generated mode-locked pulses have a spectrum ranging from 1548 nm to more than 1605 nm, as well as a 3-dB bandwidth of 12 nm. The mode-locked pulse train has an average output power level of 17 mW with a calculated peak power of 1.24 kW and energy per pulse of approximately 730 pJ. The spectrum also exhibits a Signal-to-Noise Ratio (SNR) of 50 dB as well as a repetition rate of 23.2 MHz. The system is very stable and shows little power fluctuation, in addition to being repeatable.

Sensitivity Improvement of Ammonia Gas Sensor Based on Poly(3,4-ethylenedioxy thiophene):Poly(styrenesulfonate) by Employing Doping of Bromo cresol Green

International Nuclear Information System (INIS)

Aba, L.; Yusuf, Y.; Triyana, K.; Aba, L.; Siswanta, D.

2014-01-01

The aim of this research is to improve the sensitivity of ammonia gas sensor (hereafter referred to as sensor) based on poly(3,4-ethylenedioxy thiophene):poly(styrenesulfonate) (PEDOT:PSS) by employing the doping dye of bromo cresol green (BCG). The doping process was carried out by mixing the BCG and the PEDOT:PSS in a solution with an optimum ratio of 1:1 in volume. The sensor was fabricated by using spin-coating technique followed by annealing process. For comparison, the BCG thin film and the PEDOT:PSS thin film were also deposited with the same method on glass substrates. For optical characterization, a red-light laser diode with a 650 nm wavelength was used as light source. Under illumination with the laser diode, the bare glass substrate and BCG film showed no absorption. The sensor exhibited linear response to ammonia gas for the range of 200 ppm to 800 ppm. It increased the sensitivity of sensor based on PEDOT:PSS with BCG doping being about twofold higher compared to that of without BCG doping. Furthermore, the response time and the recovery time of the sensor were found very fast. It suggests that the optical sensor based on BCG-doped PEDOT:PSS is promising for application as ammonia gas sensor.

Graphene Oxide-Based Q-Switched Erbium-Doped Fiber Laser

International Nuclear Information System (INIS)

Yap, Y. K.; Harun, S. W.; Ahmad, H.; Huang, N. M.

2013-01-01

We demonstrate a pulsed ring erbium-doped fiber laser based on graphene oxide (GO), employing a simplified Hummer's method to synthesize the GO via chemical oxidation of graphite flakes at room temperature. By dipping a fiber ferrule end face onto the GO suspension, GO is successfully coated onto the end face, making it a simple saturable absorption device. A stable Q-switched pulsed fiber laser is achieved with a low pump threshold of 9.5 mW at 980 nm. The pulse repetition rate ranges from 16.0 to 57.0 kHz. The pulse width and the pulse energy are studied and discussed

Nice Guys Finish Last: Are People with Higher Tax Morale Taxed more Heavily?

OpenAIRE

Philipp Doerrenberg; Denvil Duncan; Clemens Fuest; Andreas Peichl

2012-01-01

This paper is the first to provide evidence of efficient taxation of groups with heterogeneous levels of 'tax morale'. We set up an optimal income tax model where high tax morale implies a high subjective cost of evading taxes. The model predicts that 'nice guys finish last': groups with higher tax morale will be taxed more heavily, simply because taxing them is less costly. Based on unique cross-country micro data and an IV approach to rule out reverse causality, we find empirical support fo...

Vanadia-based SCR Catalysts Supported on Tungstated and Sulfated Zirconia: Influence of Doping with Potassium

DEFF Research Database (Denmark)

Due-Hansen, Johannes; Boghosian, Soghomon; Kustov, Arkadii

2007-01-01

A series of vanadium-based SCR catalysts supported on sulfated or tungstated ZrO2 were synthesized and characterized by means of N2-BET, XRD, NH3-TPD and in situ Raman spectroscopy. The effect of potassium doping on the properties of vanadia species is studied in detail. A number of catalyst...... and morphology, the surface composition and the molecular configuration of the dispersed vanadates. It was observed that poisoning with potassium had a negligible effect on the surface vanadate species (especially the V=O stretching frequency observed by in situ Raman spectroscopy) if supported on the sulfated...... the observed decrease in V=O stretching frequency and the higher proportion of dimers and higher polymers through coordination between K+ and two neighbouring V=O. The results suggest an increased resistance towards potassium doping for the vanadia-based catalysts supported on sulfated zirconia....

Cysteine detection using a high-fluorescence sensor based on a nitrogen-doped graphene quantum dot–mercury(II) system

Energy Technology Data Exchange (ETDEWEB)

Liu, Zhenzhen; Gong, Yan; Fan, Zhefeng, E-mail: zhefengfan@126.com

2016-07-15

A novel and highly sensitive fluorescence sensor, which was based on the recovered fluorescence of a nitrogen-doped graphene quantum dot–Hg(II) system, was developed for cysteine detection. An easy, green, one-pot synthesis of nitrogen-doped graphene quantum dots was established by using citric acid and urea as carbon and nitrogen sources, respectively. The fluorescence of nitrogen-doped graphene quantum dots was significantly quenched by Hg(II) because of the efficient electron transfer between nitrogen-doped graphene quantum dots and Hg(II). Subsequently, fluorescence was recovered gradually upon cysteine addition to form a stable complex with Hg(II). The fluorescence sensor showed a response to cysteine within a wide concentration range of 0.05–30 μmol L{sup −1}, with a detection limit of 1.3 nmol L{sup −1}. The sensor was successfully applied to detect cysteine in honey and beer samples, with a recovery range of 98–105%.

Cysteine detection using a high-fluorescence sensor based on a nitrogen-doped graphene quantum dot–mercury(II) system

International Nuclear Information System (INIS)

Liu, Zhenzhen; Gong, Yan; Fan, Zhefeng

2016-01-01

A novel and highly sensitive fluorescence sensor, which was based on the recovered fluorescence of a nitrogen-doped graphene quantum dot–Hg(II) system, was developed for cysteine detection. An easy, green, one-pot synthesis of nitrogen-doped graphene quantum dots was established by using citric acid and urea as carbon and nitrogen sources, respectively. The fluorescence of nitrogen-doped graphene quantum dots was significantly quenched by Hg(II) because of the efficient electron transfer between nitrogen-doped graphene quantum dots and Hg(II). Subsequently, fluorescence was recovered gradually upon cysteine addition to form a stable complex with Hg(II). The fluorescence sensor showed a response to cysteine within a wide concentration range of 0.05–30 μmol L −1 , with a detection limit of 1.3 nmol L −1 . The sensor was successfully applied to detect cysteine in honey and beer samples, with a recovery range of 98–105%.

Nitrogen-Doped Carbon for Red Phosphorous Based Anode Materials for Lithium Ion Batteries

Directory of Open Access Journals (Sweden)

Jiaoyang Li

2018-01-01

Full Text Available Serving as conductive matrix and stress buffer, the carbon matrix plays a pivotal role in enabling red phosphorus to be a promising anode material for high capacity lithium ion batteries and sodium ion batteries. In this paper, nitrogen-doping is proved to effective enhance the interface interaction between carbon and red phosphorus. In detail, the adsorption energy between phosphorus atoms and oxygen-containing functional groups on the carbon is significantly reduced by nitrogen doping, as verified by X-ray photoelectron spectroscopy. The adsorption mechanisms are further revealed on the basis of DFT (the first density functional theory calculations. The RPNC (red phosphorus/nitrogen-doped carbon composite material shows higher cycling stability and higher capacity than that of RPC (red phosphorus/carbon composite anode. After 100 cycles, the RPNC still keeps discharge capacity of 1453 mAh g−1 at the current density of 300 mA g−1 (the discharge capacity of RPC after 100 cycles is 1348 mAh g−1. Even at 1200 mA g−1, the RPNC composite still delivers a capacity of 1178 mAh g−1. This work provides insight information about the interface interactions between composite materials, as well as new technology develops high performance phosphorus based anode materials.

Application of response surface methodology for the implementation, optimization and characterization of a new radiation sensor based on commercial glass doped with copper

International Nuclear Information System (INIS)

Mezzi, Ines

2012-01-01

In order to realize a dosimeter based on a silica glass doped with copper and detecting low doses, we used the method of ion exchange and studied the influence of various parameters of doping: the percentage of CuSO4, temperature and heating time in the oven. Our results showed that the doped glass can be used as a dosimeter for gamma radiation in the range of doses of 1 Gy to 100kGy. To optimize the experimental conditions of doping the glass with copper, we used a central composite design (CCD).

Detection of EPO gene doping in blood.

Science.gov (United States)

Neuberger, Elmo W I; Jurkiewicz, Magdalena; Moser, Dirk A; Simon, Perikles

2012-11-01

Gene doping--or the abuse of gene therapy--will continue to threaten the sports world. History has shown that progress in medical research is likely to be abused in order to enhance human performance. In this review, we critically discuss the progress and the risks associated with the field of erythropoietin (EPO) gene therapy and its applicability to EPO gene doping. We present typical vector systems that are employed in ex vivo and in vivo gene therapy trials. Due to associated risks, gene doping is not a feasible alternative to conventional EPO or blood doping at this time. Nevertheless, it is well described that about half of the elite athlete population is in principle willing to risk its health to gain a competitive advantage. This includes the use of technologies that lack safety approval. Sophisticated detection approaches are a prerequisite for prevention of unapproved and uncontrolled use of gene therapy technology. In this review, we present current detection approaches for EPO gene doping, with a focus on blood-based direct and indirect approaches. Gene doping is detectable in principle, and recent DNA-based detection strategies enable long-term detection of transgenic DNA (tDNA) following in vivo gene transfer. Copyright © 2012 John Wiley & Sons, Ltd.

Optical and magneto-optical properties of the electron-doped and hole-doped C{sub 82} crystal

Energy Technology Data Exchange (ETDEWEB)

Rostampour, E., E-mail: el_rostampour@yahoo.com [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Koohi, A. [Plasma Physics and Nuclear Fusion Research School, Nuclear Science and Technology Research Institute, AEOI, Tehran (Iran, Islamic Republic of)

2015-01-15

The optical and magnetic properties of the doped C{sub 82} crystal have been investigated by Su–Schrieffer–Heeger (SSH) model, which is based on the Ewald method. When the C{sub 82} molecule is doped with one electron (or hole), a single electron is remained in the energy level that affects the optical and magnetic properties of the C{sub 82} crystal. The lattice and electronic structures of C{sub 82} changed with doping electron (or hole) in the molecule of C{sub 82}. Therefore, polarons are predicted in doped fullerenes. The obtained results showed that the dielectric tensor of the C{sub 82} crystal increased with doping electron (or hole) in the molecule of C{sub 82}. The spectral shapes of the dielectric tensor, circular dichroism and birefringence coefficient of the C{sub 82} crystal turn out to be determined mainly by the geometrical distributions of the pentagons in the fullerene structures.

Current anti-doping policy: a critical appraisal.

Science.gov (United States)

Kayser, Bengt; Mauron, Alexandre; Miah, Andy

2007-03-29

Current anti-doping in competitive sports is advocated for reasons of fair-play and concern for the athlete's health. With the inception of the World Anti Doping Agency (WADA), anti-doping effort has been considerably intensified. Resources invested in anti-doping are rising steeply and increasingly involve public funding. Most of the effort concerns elite athletes with much less impact on amateur sports and the general public. We review this recent development of increasingly severe anti-doping control measures and find them based on questionable ethical grounds. The ethical foundation of the war on doping consists of largely unsubstantiated assumptions about fairness in sports and the concept of a "level playing field". Moreover, it relies on dubious claims about the protection of an athlete's health and the value of the essentialist view that sports achievements reflect natural capacities. In addition, costly antidoping efforts in elite competitive sports concern only a small fraction of the population. From a public health perspective this is problematic since the high prevalence of uncontrolled, medically unsupervised doping practiced in amateur sports and doping-like behaviour in the general population (substance use for performance enhancement outside sport) exposes greater numbers of people to potential harm. In addition, anti-doping has pushed doping and doping-like behaviour underground, thus fostering dangerous practices such as sharing needles for injection. Finally, we argue that the involvement of the medical profession in doping and anti-doping challenges the principles of non-maleficience and of privacy protection. As such, current anti-doping measures potentially introduce problems of greater impact than are solved, and place physicians working with athletes or in anti-doping settings in an ethically difficult position. In response, we argue on behalf of enhancement practices in sports within a framework of medical supervision. Current anti-doping

Attitudes and doping: a structural equation analysis of the relationship between athletes' attitudes, sport orientation and doping behaviour

Directory of Open Access Journals (Sweden)

Petróczi Andrea

2007-11-01

Full Text Available Abstract Background For effective deterrence methods, individual, systemic and situational factors that make an athlete or athlete group more susceptible to doping than others should be fully investigated. Traditional behavioural models assume that the behaviour in question is the ultimate end. However, growing evidence suggests that in doping situations, the doping behaviour is not the end but a means to an end, which is gaining competitive advantage. Therefore, models of doping should include and anti-doping policies should consider attitudes or orientations toward the specific target end, in addition to the attitude toward the 'tool' itself. Objectives The aim of this study was to empirically test doping related dispositions and attitudes of competitive athletes with the view of informing anti-doping policy developments and deterrence methods. To this end, the paper focused on the individual element of the drug availability – athlete's personality – situation triangle. Methods Data were collected by questionnaires containing a battery of psychological tests among competitive US male college athletes (n = 199. Outcome measures included sport orientation (win and goal orientation and competitiveness, doping attitude, beliefs and self-reported past or current use of doping. A structural equation model was developed based on the strength of relationships between these outcome measures. Results Whilst the doping model showed satisfactory fit, the results suggested that athletes' win and goal orientation and competitiveness do not play a statistically significant role in doping behaviour, but win orientation has an effect on doping attitude. The SEM analysis provided empirical evidence that sport orientation and doping behaviour is not directly related. Conclusion The considerable proportion of doping behaviour unexplained by the model suggests that other factors play an influential role in athletes' decisions regarding prohibited methods

Promoting functional foods as acceptable alternatives to doping: potential for information-based social marketing approach

Directory of Open Access Journals (Sweden)

Petróczi Andrea

2010-11-01

Full Text Available Abstract Background Substances with performance enhancing properties appear on a continuum, ranging from prohibited performance enhancing drugs (PED through dietary supplements to functional foods (FF. Anti-doping messages designed to dissuade athletes from using PEDs have been typically based on moralising sport competition and/or employing scare campaigns with focus on the negative consequences. Campaigns offering comparable and acceptable alternatives are nonexistent, nor are athletes helped in finding these for themselves. It is timely that social marketing strategies for anti-doping prevention and intervention incorporate media messages that complement the existing approaches by promoting comparable and acceptable alternatives to doping. To facilitate this process, the aim of this study was to ascertain whether a single exposure knowledge-based information intervention led to increased knowledge and subsequently result in changes in beliefs and automatic associations regarding performance enhancements. Methods In a repeated measure design, 115 male recreational gym users were recruited and provided with a brief information pamphlet on nitrite/nitrate and erythropoietin as a comparison. Measures of knowledge, beliefs and automatic associations were taken before and after the intervention with at least 24 hours between the two assessments. The psychological tests included explicit measures of beliefs and cognitive attitudes toward FF and PED using a self-reported questionnaire and computerised assessments of automatic associations using the modified and shortened version of the Implicit Association Test. Results The information based intervention significantly increased knowledge (p p p Conclusion Evidence was found that even a single exposure to a persuasive positive message can lead to belief change and can create new or alter existing associations - but only in the specific domain. Interventions to change outcome expectations in a positive

Palladium on Nitrogen-Doped Mesoporous Carbon: A Bifunctional Catalyst for Formate-Based, Carbon-Neutral Hydrogen Storage.

Science.gov (United States)

Wang, Fanan; Xu, Jinming; Shao, Xianzhao; Su, Xiong; Huang, Yanqiang; Zhang, Tao

2016-02-08

The lack of safe, efficient, and economical hydrogen storage technologies is a hindrance to the realization of the hydrogen economy. Reported herein is a reversible formate-based carbon-neutral hydrogen storage system that is established over a novel catalyst comprising palladium nanoparticles supported on nitrogen-doped mesoporous carbon. The support was fabricated by a hard template method and nitridated under a flow of ammonia. Detailed analyses demonstrate that this bicarbonate/formate redox equilibrium is promoted by the cooperative role of the doped nitrogen functionalities and the well-dispersed, electron-enriched palladium nanoparticles. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Anion exchange membrane based on alkali doped poly(2,5-benzimidazole) for fuel cell

CSIR Research Space (South Africa)

Luo, H

2012-02-01

Full Text Available The properties of alkali doped poly(2,5-benzimidazole) membrane with different alkali doping level for fuel cell application is reported in this work. The alkali doping level played an important role for the ion conductivity of the membrane. The ion...

Evaluation of surface energy state distribution and bulk defect concentration in DSSC photoanodes based on Sn, Fe, and Cu doped TiO{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Ako, Rajour Tanyi [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam); Ekanayake, Piyaisiri, E-mail: piyasiri.ekanayake@ubd.edu.bn [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam); Young, David James [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam); Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research -A*STAR, 3 Research Link, 117602 (Singapore); Faculty of Science, Health, Education and Engineering, University of the Sunshine Coast, Locked Bag 4, Maroochydore DC, Queensland, 4558 (Australia); Hobley, Jonathan [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam); Chellappan, Vijila [Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research - A*STAR, 3 Research Link, 117602 (Singapore); Tan, Ai Ling [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam); Gorelik, Sergey; Subramanian, Gomathy Sandhya [Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research - A*STAR, 3 Research Link, 117602 (Singapore); Lim, Chee Ming [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam)

2015-10-01

Graphical abstract: - Highlights: • The structural, optical and optoelectronic properties of 1 mol.% Fe, Sn and Cu doped TiO{sub 2} have been compared. • Transient lifetimes for pure TiO{sub 2} and Sn doped TiO{sub 2} were considerably shorter than Fe and Cu doped TiO{sub 2}. • A good correlation between the bulk defects and transient decay for the doped TiO{sub 2} powders was observed. • Photon to current conversion efficiency of DSSC based on the metal doped TiO{sub 2} were in order Sn-TiO{sub 2} > Cu-TiO{sub 2} > Pure >> Fe-TiO{sub 2}. • DSSC based on Fe doped photoanodes is limited by a high concentration of surface free holes observed at 433 nm. - Abstract: Electron transfer dynamics in the oxide layers of the working electrodes in both dye-sensitized solar cells and photocatalysts greatly influences their performance. A proper understanding of the distribution of surface and bulk energy states on/in these oxide layers can provide insights into the associated electron transfer processes. Metal ions like Iron (Fe), Copper (Cu) and Tin (Sn) doped onto TiO{sub 2} have shown enhanced photoactivity in these processes. In this work, the structural, optical and transient properties of Fe, Cu and Sn doped TiO{sub 2} nanocrystalline powders have been investigated and compared using EDX, Raman spectroscopy, X-ray Photoelectron spectroscopy (XPS), and Transient Absorption spectroscopy (TAS). Surface free energy states distributions were probed using Electrochemical Impedance spectroscopy (EIS) on Dye Sensitized Solar Cells (DSSC) based on the doped TiO{sub 2} photoanodes. Raman and XPS Ti2p{sub 3/2} peak shifts and broadening showed that the concentration of defects were in the order: Cu doped TiO{sub 2} > Fe doped TiO{sub 2} > Sn doped TiO{sub 2} > pure TiO{sub 2}. Nanosecond laser flash photolysis of Fe and Cu doped TiO{sub 2} indicated slower transient decay kinetics than that of Sn doped TiO{sub 2} or pure TiO{sub 2}. A broad absorption peak and fast

Ultraviolet electroluminescence from nitrogen-doped ZnO-based heterojuntion light-emitting diodes prepared by remote plasma in situ atomic layer-doping technique.

Science.gov (United States)

Chien, Jui-Fen; Liao, Hua-Yang; Yu, Sheng-Fu; Lin, Ray-Ming; Shiojiri, Makoto; Shyue, Jing-Jong; Chen, Miin-Jang

2013-01-23

Remote plasma in situ atomic layer doping technique was applied to prepare an n-type nitrogen-doped ZnO (n-ZnO:N) layer upon p-type magnesium-doped GaN (p-GaN:Mg) to fabricate the n-ZnO:N/p-GaN:Mg heterojuntion light-emitting diodes. The room-temperature electroluminescence exhibits a dominant ultraviolet peak at λ ≈ 370 nm from ZnO band-edge emission and suppressed luminescence from GaN, as a result of the decrease in electron concentration in ZnO and reduced electron injection from n-ZnO:N to p-GaN:Mg because of the nitrogen incorporation. The result indicates that the in situ atomic layer doping technique is an effective approach to tailoring the electrical properties of materials in device applications.

Promoting functional foods as acceptable alternatives to doping: potential for information-based social marketing approach.

Science.gov (United States)

James, Ricky; Naughton, Declan P; Petróczi, Andrea

2010-11-10

Substances with performance enhancing properties appear on a continuum, ranging from prohibited performance enhancing drugs (PED) through dietary supplements to functional foods (FF). Anti-doping messages designed to dissuade athletes from using PEDs have been typically based on moralising sport competition and/or employing scare campaigns with focus on the negative consequences. Campaigns offering comparable and acceptable alternatives are nonexistent, nor are athletes helped in finding these for themselves. It is timely that social marketing strategies for anti-doping prevention and intervention incorporate media messages that complement the existing approaches by promoting comparable and acceptable alternatives to doping. To facilitate this process, the aim of this study was to ascertain whether a single exposure knowledge-based information intervention led to increased knowledge and subsequently result in changes in beliefs and automatic associations regarding performance enhancements. In a repeated measure design, 115 male recreational gym users were recruited and provided with a brief information pamphlet on nitrite/nitrate and erythropoietin as a comparison. Measures of knowledge, beliefs and automatic associations were taken before and after the intervention with at least 24 hours between the two assessments. The psychological tests included explicit measures of beliefs and cognitive attitudes toward FF and PED using a self-reported questionnaire and computerised assessments of automatic associations using the modified and shortened version of the Implicit Association Test. The information based intervention significantly increased knowledge (p social marketing campaigns for drug free sport should follow appropriate market segmentation and use targeted messages via promoting the natural form as opposed to the purified form of the main active ingredient.

Influence of rare-earth additives (La, Sm and Dy on the microstructure and dielectric properties of doped BaTiO3 ceramics

Directory of Open Access Journals (Sweden)

Paunović Vesna

2010-01-01

Full Text Available A series of La/Mn, Sm/Mn and Dy/Mn codoped BaTiO3 samples were prepared by the conventional solid state procedure with dopant concentrations ranging from 0.1 up to 2.0 at%. The specimens were sintered at 1320°C and 1350°C in an air atmosphere for two hours. The low doped samples demonstrated a mainly uniform and homogeneous microstructure with average grain sizes ranging from 0.3 μm to 5.0 μm. The appearance of secondary abnormal grains in the fine grain matrix and core-shell structure were observed in highly doped La/BaTiO3 and Dy/BaTiO3 sintered at 1350°C. The low doped samples, sintered at 1350°C, display a high value of dielectric permittivity at room temperature, 6800 for Sm/BaTiO3, 5900 for Dy/BaTiO3 and 3100 for La/BaTiO3. A nearly flat permittivity-response was obtained in specimens with 2.0 at% additive content. Using a modified Curie-Weiss law the Curie-like constant C⁄ and a critical exponent γ were calculated. The obtained values of γ pointed out the diffuse phase transformation in heavily doped BaTiO3 samples.

Effect of cerium oxide doping on the performance of CaO-based sorbents during calcium looping cycles.

Science.gov (United States)

Wang, Shengping; Fan, Shasha; Fan, Lijing; Zhao, Yujun; Ma, Xinbin

2015-04-21

A series of CaO-based sorbents were synthesized through a sol-gel method and doped with different amounts of CeO2. The sorbent with a Ca/Ce molar ratio of 15:1 showed an excellent absorption capacity (0.59 gCO2/g sorbent) and a remarkable cycle durability (up to 18 cycles). The admirable capture performance of CaCe-15 was ascribed to its special morphology formed by the doping of CeO2 and the well-distributed CeO2 particles. The sorbents doped with CeO2 possessed a loose shell-connected cross-linking structure, which was beneficial for the contact between CaO and CO2. CaO and CeO2 were dispersed homogeneously, and the existence of CeO2 also decreased the grain size of CaO. The well-dispersed CeO2, which could act as a barrier, effectively prevented the CaO crystallite from growing and sintering, thus the sorbent exhibited outstanding stability. The doping of CeO2 also improved the carbonation rate of the sorbent, resulting in a high capacity in a short period of time.

Tunable ultraviolet solid-state dye laser based on MPMMA doped with pyrromethene 597

International Nuclear Information System (INIS)

Jiang, Y G; Fan, R W; Xia, Y Q; Chen, D Y

2011-01-01

Solid-state dye sample based on modified polymethyl methacrylate (MPMMA) co-doped with pyrromethene 597 (PM597), and coumarin 460 (C460) were prepared. A frequency-doubled pulsed Nd:YAG laser is used to pump solid-state dye sample, and the narrow linewidth dye laser of 94.4 mJ was obtained at 582 nm in an oscillator-amplifier configuration. Using a beta-BaB 2 O 4 (BBO) crystal to frequency double the dye laser into ultraviolet (UV), a tuning range from 279 to 305 nm was demonstrated from a single doped PM597 dye. To the best of our knowledge, the UV tuning range is the best under the same condition so far. The conversion slope efficiency from solid dye laser to UV laser was 8.9% and the highest UV laser output energy reached 6.94 mJ at 291 nm

CdS-based p-i-n diodes using indium and copper doped CdS films by pulsed laser deposition

International Nuclear Information System (INIS)

Hernandez-Como, N; Berrellez-Reyes, F; Mizquez-Corona, R; Ramirez-Esquivel, O; Mejia, I; Quevedo-Lopez, M

2015-01-01

In this work we report a method to dope cadmium sulfide (CdS) thin films using pulsed laser deposition. Doping is achieved during film growth at substrate temperatures of 100 °C by sequential deposition of the CdS and the dopant material. Indium sulfide and copper disulfide targets were used as the dopant sources for n-type and p-type doping, respectively. Film resistivities as low as 0.2 and 1 Ω cm were achieved for indium and copper doped films, respectively. Hall effect measurements demonstrated the change in conductivity type from n-type to p-type when the copper dopants are incorporated into the film. The controlled incorporation of indium or copper, in the undoped CdS film, results in substitutional defects in the CdS, which increases the electron and hole concentration up to 4 × 10 18 cm −3 and 3 × 10 20 cm −3 , respectively. The results observed with CdS doping can be expanded to other chalcogenides material compounds by just selecting different targets. With the optimized doped films, CdS-based p-i-n diodes were fabricated yielding an ideality factor of 4, a saturation current density of 2 × 10 −6 A cm −2 and a rectification ratio of three orders of magnitude at ±3 V. (paper)

The Anti-Doping Movement.

Science.gov (United States)

Willick, Stuart E; Miller, Geoffrey D; Eichner, Daniel

2016-03-01

Historical reports of doping in sports date as far back as the ancient Greek Olympic Games. The anti-doping community considers doping in sports to be cheating and a violation of the spirit of sport. During the past century, there has been an increasing awareness of the extent of doping in sports and the health risks of doping. In response, the anti-doping movement has endeavored to educate athletes and others about the health risks of doping and promote a level playing field. Doping control is now undertaken in most countries around the world and at most elite sports competitions. As athletes have found new ways to dope, however, the anti-doping community has endeavored to strengthen its educational and deterrence efforts. It is incumbent upon sports medicine professionals to understand the health risks of doping and all doping control processes. Copyright © 2016 American Academy of Physical Medicine and Rehabilitation. Published by Elsevier Inc. All rights reserved.

Non-intentional doping in sports.

Science.gov (United States)

Yonamine, Mauricio; Garcia, Paula Rodrigues; de Moraes Moreau, Regina Lúcia

2004-01-01

Compulsory drug testing was introduced in 1968 by the International Olympic Committee. Since then, several doping cases have been reported in sports competition world wide. Positive results are based on the detection of prohibited substances, their metabolites and markers in biological (mainly urine) samples supplied by athletes. In some cases, the evidences were not contested and athletes admitted the use of banned substances. However, in other cases, athletes denied the use of doping to enhance performance and claimed to have inadvertently or passively absorbed the drug. Unfortunately, no current accepted analytical method is capable of distinguishing between a sample from a cheater and one from an athlete who was passively exposed to a doping agent. Athletes' allegations have included the passive inhalation of drug smoke (e.g. marijuana) or the ingestion of food or products sold as nutritional supplements that contained prohibited substances. In the scientific literature, several studies have been performed to investigate the possibility of an accidental exposure being the reason for the appearance of detectable quantities of banned substances in urine samples. Based on these studies, this article discusses those cases where the athlete's claims could be possible in generating a positive result in doping control and in which circumstances it would be improbable to happen.

Biological passport in the fight against doping

Directory of Open Access Journals (Sweden)

Mitja Ferlež

2012-10-01

for new ways of proving abuse of prohibited substances and methods. One of these is the strategy of long-term monitoring of biomarkers for identifying and sanctioning blood doping in athletes. This strategy is based on the assumption that doping will change values of biomarkers of the athlete that are otherwise kept in homeostasis. If we use a validated mathematical model, it is possible to determine whether the change in the values of biomarkers is due to doping or due to natural variations. Such a model is a biological passport, which enables the identification of the abnormal blood changes in biological indicators of the athlete. Since 2010 it has been possible to introduce sanctions against the athlete for breach of anti-doping rules based solely on an abnormal change of biomarkers. The introduction of the biological passport is a milestone in demonstrating drug abuse in sports, because it substantiates the abnormal deviations of biomarkers from the expected, although the cause of it remains unknown.

Doped Organic Transistors.

Science.gov (United States)

Lüssem, Björn; Keum, Chang-Min; Kasemann, Daniel; Naab, Ben; Bao, Zhenan; Leo, Karl

2016-11-23

Organic field-effect transistors hold the promise of enabling low-cost and flexible electronics. Following its success in organic optoelectronics, the organic doping technology is also used increasingly in organic field-effect transistors. Doping not only increases device performance, but it also provides a way to fine-control the transistor behavior, to develop new transistor concepts, and even improve the stability of organic transistors. This Review summarizes the latest progress made in the understanding of the doping technology and its application to organic transistors. It presents the most successful doping models and an overview of the wide variety of materials used as dopants. Further, the influence of doping on charge transport in the most relevant polycrystalline organic semiconductors is reviewed, and a concise overview on the influence of doping on transistor behavior and performance is given. In particular, recent progress in the understanding of contact doping and channel doping is summarized.

Linear all-fiber temperature sensor based on macro-bent erbium doped fiber

International Nuclear Information System (INIS)

Hajireza, P; Cham, C L; Kumar, D; Abdul-Rashid, H A; Emami, S D; Harun, S W

2010-01-01

A new all fiber temperature sensor is proposed and demonstrated based on a pair of 1 meter erbium-doped fiber (EDF), which are respectively macro-bent and straight. The sensor has a linear normalized loss (dB) response to temperature at 6.5 mm bending radius and 1580 nm input wavelength. The main advantage of this sensor is high temperature resolution (less than 1°C) and sensitivity (0.03 dB/°C) due to combination of temperature dependence of EDF and bending loss. The proposed silica based sensor, has the potential for wide range and high temperature applications in harsh environments

Effects of B site doping on electronic structures of InNbO4 based on hybrid density functional calculations

Science.gov (United States)

Lu, M. F.; Zhou, C. P.; Li, Q. Q.; Zhang, C. L.; Shi, H. F.

2018-01-01

In order to improve the photocatalytic activity under visible-light irradiation, we adopted first principle calculations based on density functional theory (DFT) to calculate the electronic structures of B site transition metal element doped InNbO4. The results indicated that the complete hybridization of Nb 4d states and some Ti 3d states contributed to the new conduction band of Ti doped InNbO4, barely changing the position of band edge. For Cr doping, some localized Cr 3d states were introduced into the band gap. Nonetheless, the potential of localized levels was too positive to cause visible-light reaction. When it came to Cu doping, the band gap was almost same with that of InNbO4 as well as some localized Cu 3d states appeared above the top of VB. The introduction of localized energy levels benefited electrons to migrate from valence band (VB) to conduction band (CB) by absorbing lower energy photons, realizing visible-light response.

Doping enhanced barrier lowering in graphene-silicon junctions

Science.gov (United States)

Zhang, Xintong; Zhang, Lining; Chan, Mansun

2016-06-01

Rectifying properties of graphene-semiconductor junctions depend on the Schottky barrier height. We report an enhanced barrier lowering in graphene-Si junction and its essential doping dependence in this paper. The electric field due to ionized charge in n-type Si induces the same type doping in graphene and contributes another Schottky barrier lowering factor on top of the image-force-induced lowering (IFIL). We confirm this graphene-doping-induced lowering (GDIL) based on well reproductions of the measured reverse current of our fabricated graphene-Si junctions by the thermionic emission theory. Excellent matching between the theoretical predictions and the junction data of the doping-concentration dependent barrier lowering serves as another evidence of the GDIL. While both GDIL and IFIL are enhanced with the Si doping, GDIL exceeds IFIL with a threshold doping depending on the as-prepared graphene itself.

Inside athletes' minds: Preliminary results from a pilot study on mental representation of doping and potential implications for anti-doping

Directory of Open Access Journals (Sweden)

Mazanov Jason

2011-05-01

Full Text Available Abstract Background Despite the growing body of literature and putative links between the use of ergogenic nutritional supplements, doping and illicit drugs, it remains unclear whether, in athletes' minds, doping aligns with illicit behaviour or with functional use of chemical or natural preparations. To date, no attempt has been made to quantitatively explore athletes' mental representation of doping in relation to illegality and functionality. Methods A convenience sample of student athletes from a large South-Eastern Australian university responded to an on-line survey. Competitive athletes (n = 46 were grouped based on self-reported use as follows: i none used (30%, ii supplement only (22%, iii illicit only (26% and iv both supplements and illicit drug use (22%. Whereas no athlete reported doping, data provided on projected supplement-, doping- and drug use by the four user groups allowed evaluation of doping-related cognition in the context of self-reported supplement- and illicit drug taking behaviour; and comparison between these substances. Results A significantly higher prevalence estimation was found for illicit drug use and a trend towards a biased social projection emerged for supplement use. Doping estimates by user groups showed mixed results, suggesting that doping had more in common with the ergogenic nutritional supplement domain than the illicit drug domain. Conclusions Assessing the behavioural domain to which doping belongs to in athletes' mind would greatly advance doping behaviour research toward prevention and intervention. Further investigation refining the peculiarity of the mental representation of doping with a larger study sample, controlling for knowledge of doping and other factors, is warranted.

Characterization and technology of AlGaAs/GaAs phototransistor with double delta-doped base

International Nuclear Information System (INIS)

Radziewicz, D.; Sciana, B.; Pucicki, D.; Zborowska-Lindert, I.; Kovac, J.; Skriniarova, J.; Vincze, A.

2011-01-01

This work describes the fabrication and measurements of n-p-n AlGaAs/GaAs heterojunction phototransistor with double Zn-delta-doped 50 nm - thick GaAs base region. Parameters of the particular transistor epilayers were optimized by computer simulations using Silvaco Atlas program. (authors)

Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD

International Nuclear Information System (INIS)

Tao Zhikuo; Zhang Rong; Xiu Xiangqian; Cui Xugao; Li Xin; Xie Zili; Zheng Youdou; Li Li; Zheng Rongkun; Ringer, Simon P

2012-01-01

We have grown transition metal (Fe, Mn) doped GaN thin films on c-oriented sapphire by metal-organic chemical vapor deposition. By varying the flow of the metal precursor, a series of samples with different ion concentrations are synthesized. Microstructural properties are characterized by using a high-resolution transmission electron microscope. For Fe over-doped GaN samples, hexagonal Fe 3 N clusters are observed with Fe 3 N(0002) parallel to GaN (0002) while for Mn over-doped GaN, hexagonal Mn 6 N 2.58 phases are observed with Mn 6 N 2.58 (0002) parallel to GaN(0002). In addition, with higher concentration ions doping into the lattice matrix, the partial lattice orientation is distorted, leading to the tilt of GaN(0002) planes. The magnetization of the Fe over-doped GaN sample is increased, which is ascribed to the participation of ferromagnetic iron and Fe 3 N. The Mn over-doped sample displays very weak ferromagnetic behavior, which probably originates from the Mn 6 N 2.58 . (semiconductor materials)

Can We Better Integrate the Role of Anti-Doping in Sports and Society? A Psychological Approach to Contemporary Value-Based Prevention.

Science.gov (United States)

Petróczi, Andrea; Norman, Paul; Brueckner, Sebastian

2017-01-01

In sport, a wide array of substances with established or putative performance-enhancing properties is used. Most substances are fully acceptable, whilst a defined set, revised annually, is prohibited; thus, using any of these prohibited substances is declared as cheating. In the increasingly tolerant culture of pharmacological and technical human enhancements, the traditional normative approach to anti-doping, which involves telling athletes what they cannot do to improve their athletic ability and performance, diverges from the otherwise positive values attached to human improvement and enhancement in society. Today, doping is the epitome of conflicting normative expectations about the goal (performance enhancement) and the means by which the goal is achieved (use of drugs). Owing to this moral-functional duality, addressing motivations for doping avoidance at the community level is necessary, but not sufficient, for effective doping prevention. Relevant and meaningful anti-doping must also recognise and respect the values of those affected, and consolidate them with the values underpinning structural, community level anti-doping. Effective anti-doping efforts are pragmatic, positive, preventive, and proactive. They acknowledge the progressive nature of how a "performance mindset" forms in parallel with the career transition to elite level, encompasses all levels and abilities, and directly addresses the reasons behind doping use with tangible solutions. For genuine integration into sport and society, anti-doping should consistently engage athletes and other stakeholders in developing positive preventive strategies to ensure that anti-doping education not only focuses on the intrinsic values associated with the spirit of sport but also recognises the values attached to performance enhancement, addresses the pressures athletes are under, and meets their needs for practical solutions to avoid doping. Organisations involved in anti- doping should avoid the image of

Positron trapping in heavily irradiated semiconductors

International Nuclear Information System (INIS)

Moser, P.; Pautrat, J.L.; Corbel, C.; Hautojarvi, P.

1985-01-01

Vacancy processes are studied in several heavily irradiated semiconductors. Specimens are ZnTe, CdTe, CdTe (In), InP, InP (Cr), InP (Zn) and Ge. Irradiations are made at 20 K using a 3 MeV Van de Graaff electron accelerator. Doses are 4 x 10 18 e - /cm 2 . Lifetime measurements are made at 77 K at each step of an isochronal annealing (30 min 20 K). In each specimen, the results show a significant increase of the lifetime (+ 30 at + 50 ps) which anneals out in different steps restoring the initial lifetime. The steps are sharp (ΔT/T=0.3) with the exception of InP, InP(Cr), InP(Zn), (ΔT/T=0.9). Tentative interpretations are given

Efficient acetone sensor based on Ni-doped ZnO nanostructures prepared by spray pyrolysis technique

Science.gov (United States)

Darunkar, Swapnil S.; Acharya, Smita A.

2018-05-01

Ni-doped ZnO thin film was prepared by home-built spray pyrolysis unit for the detection of acetone at 300°C. Scanning electron microscopic (SEM) images of as-developed thin film of undoped ZnO exhibits large quantity of spherical, non-agglomerated particles with uniform size while in Ni-doped ZnO, particles are quite non-uniform in nature. The particle size estimated by using image J are obtained to be around 20-200 nm. Ni-doping effect on band gaps are determined by UV-vis optical spectroscopy and band gap of Ni-doped ZnO is found to be 3.046 eV. Nickel doping exceptionally enhances the sensing response of ZnO as compared to undoped ZnO system. The major role of the Ni-doping is to create more active sites for chemisorbed oxygen on the surface of sensor and correspondingly, to improve the sensing response. The 6 at.% of Ni-doped ZnO exhibits the highest response (92%) for 100 ppm acetone at 300 °C.

Conductive Langmuir-Blodgett films. Doping with iodine or self-doping?

International Nuclear Information System (INIS)

Bourgoin, Jean-Philippe

1991-01-01

In this research thesis dealing with molecular architecture, the author reports the testing of two strategies aiming at reducing the importance of defects in conductive Langmuir-Blodgett films, and at enabling the production of conductive mono-molecular layer. According to the first strategy, conductive films are obtained after doping based on the use of iodine vapours of an insulating precursor film of molecules derived from BEDT-TTF. The so-produced films display a high conductivity and can be used as sensitive elements in gas sensors, but remain macroscopically insulating, probably because molecular reorganisation, as shown by a study based on different techniques (IR and UV linear dichroism, Raman spectroscopy, X ray diffraction), generates too many defects. The second strategy, self-doping, is based on a mixing of two derivatives of the same electro-active nucleus (the TCNQ, tetracyanoquinodimethane), an amphiphilic one and a semi-amphiphilic one. This strategy opens new perspectives in molecular engineering as it is a general way to produce conductive LB films from TCNQ [fr

Non-doped white organic light-emitting diodes based on aggregation-induced emission

Energy Technology Data Exchange (ETDEWEB)

Chen Shuming; Kwok, Hoi Sing [Center for Display Research, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong); Zhao Zujin; Tang, Ben Zhong, E-mail: eekwok@ust.h [Department of Chemistry, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

2010-03-10

Non-doped white organic light-emitting diodes (WOLEDs) based on newly synthesized bluish-green light-emitting material 1,3,6,8-tetrakis [4-(1,2,2-triphenylvinyl)phenyl]pyrene (TTPEPy) and red light-emitting material 4-(4-(1,2,2-triphenylvinyl)phenyl)-7-(5-(4-(1,2,2-triphenylvinyl) phenyl)thiophen-2-yl)benzo[c][1,2,5]thiadiazole (BTPETTD) have been demonstrated. A maximum efficiency of 7.4 cd A{sup -1}, 4 lm W{sup -1} and brightness of 18 000 cd m{sup -2} have been achieved by employing 3 nm thick 4, 4'-bis [N-(1-naphthyl-1-)-N-phenyl-amino]- biphenyl (NPB) as an electron-blocking layer. The WOLEDs exhibit a high colour rendering index of 90 and moderate colour stability with 1931 Commision International de L'Eclairage coordinates changing from (0.41, 0.41) to (0.38, 0.40) over a wide range of driving voltages. Moreover, the non-doped WOLEDs enjoy a reduced efficiency roll-off due to their nature of aggregation-induced emission.

Non-doped white organic light-emitting diodes based on aggregation-induced emission

International Nuclear Information System (INIS)

Chen Shuming; Kwok, Hoi Sing; Zhao Zujin; Tang, Ben Zhong

2010-01-01

Non-doped white organic light-emitting diodes (WOLEDs) based on newly synthesized bluish-green light-emitting material 1,3,6,8-tetrakis [4-(1,2,2-triphenylvinyl)phenyl]pyrene (TTPEPy) and red light-emitting material 4-(4-(1,2,2-triphenylvinyl)phenyl)-7-(5-(4-(1,2,2-triphenylvinyl) phenyl)thiophen-2-yl)benzo[c][1,2,5]thiadiazole (BTPETTD) have been demonstrated. A maximum efficiency of 7.4 cd A -1 , 4 lm W -1 and brightness of 18 000 cd m -2 have been achieved by employing 3 nm thick 4, 4'-bis [N-(1-naphthyl-1-)-N-phenyl-amino]- biphenyl (NPB) as an electron-blocking layer. The WOLEDs exhibit a high colour rendering index of 90 and moderate colour stability with 1931 Commision International de L'Eclairage coordinates changing from (0.41, 0.41) to (0.38, 0.40) over a wide range of driving voltages. Moreover, the non-doped WOLEDs enjoy a reduced efficiency roll-off due to their nature of aggregation-induced emission.

Implicit versus explicit attitude to doping: Which better predicts athletes' vigilance towards unintentional doping?

Science.gov (United States)

Chan, Derwin King Chung; Keatley, David A; Tang, Tracy C W; Dimmock, James A; Hagger, Martin S

2018-03-01

This preliminary study examined whether implicit doping attitude, explicit doping attitude, or both, predicted athletes' vigilance towards unintentional doping. A cross-sectional correlational design. Australian athletes (N=143;M age =18.13, SD=4.63) completed measures of implicit doping attitude (brief single-category implicit association test), explicit doping attitude (Performance Enhancement Attitude Scale), avoidance of unintentional doping (Self-Reported Treatment Adherence Scale), and behavioural vigilance task of unintentional doping (reading the ingredients of an unfamiliar food product). Positive implicit doping attitude and explicit doping attitude were negatively related to athletes' likelihood of reading the ingredients table of an unfamiliar food product, and positively related to athletes' vigilance towards unintentional doping. Neither attitude measures predicted avoidance of unintentional doping. Overall, the magnitude of associations by implicit doping attitude appeared to be stronger than that of explicit doping attitude. Athletes with positive implicit and explicit doping attitudes were less likely to read the ingredients table of an unknown food product, but were more likely to be aware of the possible presence of banned substances in a certain food product. Implicit doping attitude appeared to explain athletes' behavioural response to the avoidance of unintentional doping beyond variance explained by explicit doping attitude. Copyright © 2017 Sports Medicine Australia. Published by Elsevier Ltd. All rights reserved.

Optical and electrical improvements of semipolar (1 1 −2 2) GaN-based light emitting diodes by Si doping of n-GaN template

International Nuclear Information System (INIS)

Lee, Jae-Hwan; Han, Sang-Hyun; Song, Ki-Ryong; Lee, Sung-Nam

2014-01-01

Highlights: • In semipolar GaN, Si-doping is effective to reduce out-of plane PSFs toward [1−100]. • Interfacial quality of semipolar QWs was improved by increasing SiH4 flow of n-GaN. • Electrical properties of semipolar GaN were improved by increasing Si doping. • Light output power of semipolar LEDs were increased with SiH4 flow rate of n-type GaN. - Abstract: We report that the performance of semipolar (1 1 −2 2) GaN-based light-emitting diodes (LEDs) was improved by increasing the Si-doping concentration of n-type GaN templates. In-plane and out-of plane high-resolution X-ray diffraction demonstrated that crystal defects such as threading dislocation, partial stacking faults and basal stacking faults, were significantly decreased by increasing the Si-doping concentration. This resulted in the increase of carrier mobility due to reduction of the defect-scattering effect. Furthermore, the quality of InGaN/GaN quantum-well interfaces was improved by increasing the Si-doping concentration of the n-type GaN template. Based on these results, we suggest that the light-output power and operation voltage of semipolar (1 1 −2 2) GaN-based LEDs would be improved by increasing Si doping concentration of n-type GaN templates

Ultra-high Rates and Reversible Capacity of Li-S Battery with a Nitrogen-doping Conductive Lewis Base Matrix

International Nuclear Information System (INIS)

Cao, Yong; Li, Xi-long; Zheng, Ming-sen; Yang, Mao-ping; Yang, Xu-lai; Dong, Quan-feng

2016-01-01

Highlights: • A polypyrrole/reduced graphene oxide (PPy/rGO) composite was prepared from in-situ hybridization of graphene oxide and pyrrole without additional oxidant. • Nitrogen doped graphene (NG) was obtained from the calcination of the PPy/rGO composite under 1500 °C and was confirmed with abundant pyridinic type nitrogen doping. • NG was employed as a conductive Lewis base matrix of sulfur cathode and the obtained composite cathode exhibited ultra-high rates and reversible capacity. • The excellent electrochemical performance can be attributed to the efficient adsorption of Li 2 S n (n=4-8) on the pyridinic-N enriched NG surface. - Abstract: To improve the electrochemical performance of lithium sulfur batteries, a conductive Lewis base matrix, nitrogen doped graphene (NG), was prepared here through a facile strategy of annealing a polypyrrole/reduced graphene oxide composite. The obtained NG was demonstrated with enriched pyridinic-N doping and was employed as the matrix of sulfur cathode with ultra-high rates, reversible capacity and high coulombic efficiency. The improved performance can be attributed to the high conductivity of the NG and the enhanced adsorption energy of Li 2 S n (n=4-8) on the NG surface. The NG can act not only as an electronic conductive network but also as a Lewis base “catalyst” matrix that promotes the higher Li 2 S n to be further oxidized completely to S 8 as demonstrated in the cyclic voltammetry curve, which can thus significantly improve the sulfur utilization and cyclic stability even at a high sulfur loading of 75% (w/w) in the S@NG composite.

Carbon doped ZnO: Synthesis, characterization and interpretation

International Nuclear Information System (INIS)

Mishra, D.K.; Mohapatra, J.; Sharma, M.K.; Chattarjee, R.; Singh, S.K.; Varma, Shikha; Behera, S.N.; Nayak, Sanjeev K.; Entel, P.

2013-01-01

A novel thermal plasma in-flight technique has been adopted to synthesize nanocrystalline ZnO and carbon doped nanocrystalline ZnO matrix. Transmission electron microscopy (TEM) studies on these samples show the average particle sizes to be around 32 nm for ZnO and for carbon doped ZnO. An enhancement of saturation magnetization in nanosized carbon doped ZnO matrix by a factor of 3.8 has been found in comparison to ZnO nanoparticles at room temperature. Raman measurement clearly indicates the presence of Zn–C complexes surrounded by ZnO matrix in carbon doped ZnO. This indicates that the ferromagnetic signature in carbon doped ZnO arises from the creation of defects or the development of oxy-carbon clusters, in the carbon doped ZnO system. Theoretical studies based on density functional theory also support the experimental analyses. - Highlights: ► Synthesis of nanocrystalline ZnO and carbon doped ZnO matrix by inflight thermal plasma reactor. ► Enhancement of ferromagnetism in nanosized carbon doped ZnO in comparison to ZnO nanoparticles. ► Raman measurement indicates the presence of Zn–C complexes surrounded by ZnO matrix. ► Ferromagnetic signature in carbon doped ZnO arises from the development of oxy-carbon clusters. ► DFT supports experimental evidence of ferromagnetism in C doped ZnO nanoparticles.

Iron solubility in highly boron-doped silicon

International Nuclear Information System (INIS)

McHugo, S.A.; McDonald, R.J.; Smith, A.R.; Hurley, D.L.; Weber, E.R.

1998-01-01

We have directly measured the solubility of iron in high and low boron-doped silicon using instrumental neutron activation analysis. Iron solubilities were measured at 800, 900, 1000, and 1100thinsp degree C in silicon doped with either 1.5x10 19 or 6.5x10 14 thinspboronthinspatoms/cm 3 . We have measured a greater iron solubility in high boron-doped silicon as compared to low boron-doped silicon, however, the degree of enhancement is lower than anticipated at temperatures >800thinsp degree C. The decreased enhancement is explained by a shift in the iron donor energy level towards the valence band at elevated temperatures. Based on this data, we have calculated the position of the iron donor level in the silicon band gap at elevated temperatures. We incorporate the iron energy level shift in calculations of iron solubility in silicon over a wide range of temperatures and boron-doping levels, providing a means to accurately predict iron segregation between high and low boron-doped silicon. copyright 1998 American Institute of Physics

Preparation of new composite ceramics based on gadolinium-doped ceria and magnesia nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Yao, Jingying; Schelter, Matthias; Zosel, Jens; Oelssner, Wolfram [Kurt-Schwabe-Institut fuer Mess- und Sensortechnik e.V. Meinsberg, Waldheim (Germany); Mertig, Michael [Kurt-Schwabe-Institut fuer Mess- und Sensortechnik e.V. Meinsberg, Waldheim (Germany); Physikalische Chemie, Mess- und Sensortechnik, Technische Universitaet Dresden (Germany)

2017-09-15

To achieve solid electrolyte materials for electrochemical energy storage devices with very high oxygen ion conductivity, composites of gadolinium-doped ceria (GDC) and magnesia (MgO) are developed in this study. Three different preparation methods are used to prepare nanoparticles from these two components. According to the characterization results, the self-propagating high-temperature synthesis is best suited for the preparation of both nanometer-sized GDC powder as solid electrolyte and MgO powder as insulator. The structures of the prepared nanometer-sized powders have been characterized by X-ray diffraction and transmission electron microscopy. They show narrow size distributions in the lower nanometer range. Then, dense composite ceramics are prepared from a MgO-GDC mixture by sintering. The size of the crystallite domains in the sintered ceramic is in the upper nanometer range. TEM and TEM-EDX images of a new composite ceramic based on gadolinium-doped ceria and magnesia nanoparticles. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Preparation of new composite ceramics based on gadolinium-doped ceria and magnesia nanoparticles

International Nuclear Information System (INIS)

Yao, Jingying; Schelter, Matthias; Zosel, Jens; Oelssner, Wolfram; Mertig, Michael

2017-01-01

To achieve solid electrolyte materials for electrochemical energy storage devices with very high oxygen ion conductivity, composites of gadolinium-doped ceria (GDC) and magnesia (MgO) are developed in this study. Three different preparation methods are used to prepare nanoparticles from these two components. According to the characterization results, the self-propagating high-temperature synthesis is best suited for the preparation of both nanometer-sized GDC powder as solid electrolyte and MgO powder as insulator. The structures of the prepared nanometer-sized powders have been characterized by X-ray diffraction and transmission electron microscopy. They show narrow size distributions in the lower nanometer range. Then, dense composite ceramics are prepared from a MgO-GDC mixture by sintering. The size of the crystallite domains in the sintered ceramic is in the upper nanometer range. TEM and TEM-EDX images of a new composite ceramic based on gadolinium-doped ceria and magnesia nanoparticles. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

A novel flexible tactile sensor based on Ce-doped BaTiO3 nanofibers

Science.gov (United States)

Zhuang, Yongyong; Xu, Zhuo; Fu, Xiaotian; Li, Fei; Li, Jinglei; Liao, Zhipeng; Liu, Weihua

2017-07-01

The performance of a robotic hand is severely limited by the tactile feedback information similar to a human hand. Hence, a novel and robust tactile sensor has been developed to cope with the challenge of robotic hand technology. Piezoelectric material is proposed as a suitable candidate for a new efficient tactile sensor due to its excellent piezoelectric properties. In this paper, a novel flexible tactile sensor based on Ce-doped BTO nanofibers was developed. The doping mechanism of cerium ions and the working process of the sensor were analysed. The results showed that sheer stress had no contribution to the sensor, this indicated that the sensor was easy to control according to the individual’s wish. The output voltage of the sensor could reach up to 0.078 V which showed great potential for the future of intelligent robot skin application.

Gene doping in modern sport.

OpenAIRE

MAREK SAWCZUK; AGNIESZKA MACIEJEWSKA; PAWEL CIESZCZYK,

2009-01-01

Background: The subject of this paper is gene doping, which should be understood as "he non-therapeutic use of cells, genes, genetic elements, or of the modulation of gene expression, having the capacity to improve athletic performance". The authors of this work, based on the review of literature and previous research, make an attempt at wider characterization of gene doping and the discussion of related potential threats.Methods: This is a comprehensive survey of literature on the latest app...

Density functional theory calculations on the adsorption of formaldehyde and other harmful gases on pure, Ti-doped, or N-doped graphene sheets

International Nuclear Information System (INIS)

Zhang, Hong-ping; Luo, Xue-gang; Lin, Xiao-yang; Lu, Xiong; Leng, Yang; Song, Hong-tao

2013-01-01

Understanding the interaction mechanisms of CO, NO, SO 2 , and HCHO with graphene are important in developing graphene-based sensors for gas detection and removal. In this study, the effects of doped Ti or N atom on the interaction of these gases with graphene were investigated by density functional theory calculations. Analyses of adsorption energy, electron density difference, and density of states indicated that the doped Ti atom could greatly improve the interaction of gas molecules with graphene. The Ti-doped graphene sheet demonstrated selective gas absorption. The order of interaction between the gas molecules and the Ti-doped graphene sheet was as follows: SO 2 > NO > HCHO > CO. By contrast, the N-doped graphene sheet did not exhibit apparent selective gas absorption. These results imply that the Ti-doped graphene sheet is more effective than the N-doped graphene sheet in detecting and removing gas molecules because of its high selectivity.

Density functional theory calculations on the adsorption of formaldehyde and other harmful gases on pure, Ti-doped, or N-doped graphene sheets

Energy Technology Data Exchange (ETDEWEB)

Zhang, Hong-ping, E-mail: zhp1006@126.com [Engineering Research Center of Biomass Materials, Ministry of Education, School of Materials Science and Engineering, Southwest University of Science and Technology, Mianyang, Sichuan 621010 (China); Luo, Xue-gang, E-mail: lxg@swust.edu.cn [Engineering Research Center of Biomass Materials, Ministry of Education, School of Materials Science and Engineering, Southwest University of Science and Technology, Mianyang, Sichuan 621010 (China); Lin, Xiao-yang, E-mail: xylin-2004@163.com [Engineering Research Center of Biomass Materials, Ministry of Education, School of Materials Science and Engineering, Southwest University of Science and Technology, Mianyang, Sichuan 621010 (China); Lu, Xiong, E-mail: luxiong_2004@163.com [Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, Sichuan (China); Leng, Yang, E-mail: meleng@ust.hk [Department of Mechanical Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong (China); Song, Hong-tao, E-mail: yinyishushengsht@163.com [Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900 (China)

2013-10-15

Understanding the interaction mechanisms of CO, NO, SO{sub 2}, and HCHO with graphene are important in developing graphene-based sensors for gas detection and removal. In this study, the effects of doped Ti or N atom on the interaction of these gases with graphene were investigated by density functional theory calculations. Analyses of adsorption energy, electron density difference, and density of states indicated that the doped Ti atom could greatly improve the interaction of gas molecules with graphene. The Ti-doped graphene sheet demonstrated selective gas absorption. The order of interaction between the gas molecules and the Ti-doped graphene sheet was as follows: SO{sub 2} > NO > HCHO > CO. By contrast, the N-doped graphene sheet did not exhibit apparent selective gas absorption. These results imply that the Ti-doped graphene sheet is more effective than the N-doped graphene sheet in detecting and removing gas molecules because of its high selectivity.

Oxygen-doped zirconium nitride based transparent resistive random access memory devices fabricated by radio frequency sputtering method

International Nuclear Information System (INIS)

Kim, Hee-Dong; Yun, Min Ju; Kim, Kyeong Heon; Kim, Sungho

2016-01-01

In this work, we present a feasibility of bipolar resistive switching (RS) characteristics for Oxygen-doped zirconium nitride (O-doped ZrN_x) films, produced by sputtering method, which shows a high optical transmittance of approximately 78% in the visible region as well as near ultra-violet region. In addition, in a RS test, the device has a large current ratio of 5 × 10"3 in positive bias region and 5 × 10"5 in negative bias region. Then, to evaluate an ability of data storage for the proposed memory devices, we measured a retention time for 10"4 s at room temperature (RT) and 85 °C as well. As a result, the set and reset states were stably maintained with a current ratio of ∼10"2 at 85 °C to ∼10"3 at RT. This result means that the transparent memory by controlling the working pressure during sputtering process to deposit the ZrN_x films could be a milestone for future see-through electronic devices. - Highlights: • The resistive switching characteristics of the transparent O-doped ZrN_x-based RRAM cells have investigated. • Oxygen doping concentration within ZrN_x is optimized using working pressure of sputter. • Long retention time were observed.

Addition of sunitinib to cetuximab and irinotecan in patients with heavily pre-treated advanced colorectal cancer

DEFF Research Database (Denmark)

Qvortrup, Camilla; Jensen, Benny Vittrup; Jørgensen, Trine Lembrecht

2010-01-01

Results of continuous sunitinib, in combination with cetuximab and irinotecan every other week (SIC) for compassionate use in heavily pre-treated patients with mCRC are presented.......Results of continuous sunitinib, in combination with cetuximab and irinotecan every other week (SIC) for compassionate use in heavily pre-treated patients with mCRC are presented....

Light-extraction enhancement of GaN-based 395  nm flip-chip light-emitting diodes by an Al-doped ITO transparent conductive electrode.

Science.gov (United States)

Xu, Jin; Zhang, Wei; Peng, Meng; Dai, Jiangnan; Chen, Changqing

2018-06-01

The distinct ultraviolet (UV) light absorption of indium tin oxide (ITO) limits the performance of GaN-based near-UV light-emitting diodes (LEDs). Herein, we report an Al-doped ITO with enhanced UV transmittance and low sheet resistance as the transparent conductive electrode for GaN-based 395 nm flip-chip near-UV LEDs. The thickness dependence of optical and electrical properties of Al-doped ITO films is investigated. The optimal Al-doped ITO film exhibited a transmittance of 93.2% at 395 nm and an average sheet resistance of 30.1  Ω/sq. Meanwhile, at an injection current of 300 mA, the forward voltage decreased from 3.14 to 3.11 V, and the light output power increased by 13% for the 395 nm near-UV flip-chip LEDs with the optimal Al-doped ITO over those with pure ITO. This Letter provides a simple and repeatable approach to further improve the light extraction efficiency of GaN-based near-UV LEDs.

Doping dependence of Meissner effect in cuprate superconductors

International Nuclear Information System (INIS)

Feng Shiping; Huang Zheyu; Zhao Huaisong

2010-01-01

Within the t-t'-J model, the doping dependence of the Meissner effect in cuprate superconductors is studied based on the kinetic energy driven superconducting mechanism. Following the linear response theory, it is shown that the electromagnetic response consists of two parts, the diamagnetic current and the paramagnetic current, which exactly cancels the diamagnetic term in the normal state, and then the Meissner effect is obtained for all the temperature T ≤ T c throughout the superconducting dome. By considering the two-dimensional geometry of cuprate superconductors within the specular reflection model, the main features of the doping and temperature dependence of the local magnetic field profile, the magnetic field penetration depth, and the superfluid density observed on cuprate superconductors are well reproduced. In particular, it is shown that in analogy to the domelike shape of the doping dependent superconducting transition temperature, the maximal superfluid density occurs around the critical doping δ ∼ 0.195, and then decreases in both lower doped and higher doped regimes.

Cu-Doped-CdS/In-Doped-CdS Cosensitized Quantum Dot Solar Cells

Directory of Open Access Journals (Sweden)

Lin Li

2014-01-01

Full Text Available Cu-doped-CdS and In-doped-CdS cosensitized (Cu-doped-CdS/In-doped-CdS quantum dot solar cells (QDSCs are introduced here. Different cosensitized sequences, doping ratios, and the thickness (SILAR cycles of Cu-doped-CdS and In-doped-CdS are discussed. Compared with undoped CdS QDSCs, the short circuit current density, UV-Vis absorption spectra, IPCE (monochromatic incident photon-to-electron conversion, open circuit voltage, and so on are all improved. The photoelectric conversion efficiency has obviously improved from 0.71% to 1.28%.

Synthesis and Characterization of Highly Sensitive Hydrogen (H2 Sensing Device Based on Ag Doped SnO2 Nanospheres

Directory of Open Access Journals (Sweden)

Zhaorui Lu

2018-03-01

Full Text Available In this paper, pure and Ag-doped SnO2 nanospheres were synthesized by hydrothermal method and characterized via X-ray powder diffraction (XRD, field emission scanning electron microscopy (FESEM, energy dispersive spectroscopy (EDS, and X-ray photoelectron spectra (XPS, respectively. The gas sensing performance of the pure, 1 at.%, 3 at.%, and 5 at.% Ag-doped SnO2 sensing devices toward hydrogen (H2 were systematically evaluated. The results indicated that compared with pure SnO2 nanospheres, Ag-doped SnO2 nanospheres could not only decrease the optimum working temperature but also significantly improve H2 sensing such as higher gas response and faster response-recovery. Among all the samples, the 3 at.% Ag-doped SnO2 showed the highest response 39 to 100 μL/L H2 at 300 °C. Moreover, its gas sensing mechanism was discussed, and the results will provide reference and theoretical guidance for the development of high-performance SnO2-based H2 sensing devices.

High power, ultra-broadband supercontinuum source based on highly GeO2 doped silica fiber

DEFF Research Database (Denmark)

Jain, Deepak; Sidharthan, Raghuraman; Moselund, Peter M.

2017-01-01

We demonstrate a 74 mol % GeO2 doped fiber for mid-infrared supercontinuum generation. Experiments ensure a highest output power for a broadest spectrum from 700nm to 3200nm from this fiber, while being pumped by a broadband 4 stage Erbium fiber based MOPA. The effect of repetition rate of pump...

Highly concentrated, stable nitrogen-doped graphene for supercapacitors: Simultaneous doping and reduction

Energy Technology Data Exchange (ETDEWEB)

Jiang Baojiang [College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin (China); Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education of the People' s Republic of China, Heilongjiang University, Harbin (China); Tian Chungui; Wang Lei; Sun Li; Chen Chen; Nong Xiaozhen [Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education of the People' s Republic of China, Heilongjiang University, Harbin (China); Qiao Yingjie, E-mail: qiaoyingjie@hrbeu.edu.cn [College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin (China); Fu Honggang, E-mail: fuhg@vip.sina.com [Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education of the People' s Republic of China, Heilongjiang University, Harbin (China)

2012-02-01

In this work, we developed a concentrated ammonia-assisted hydrothermal method to obtain N-doped graphene sheets by simultaneous N-doping and reduction of graphene oxide (GO) sheets. The effects of hydrothermal temperature on the surface chemistry and the structure of N-doped graphene sheets were also investigated. X-ray photoelectron spectroscopy (XPS) study of N-doped graphene reveals that the highest doping level of 7.2% N is achieved at 180 Degree-Sign C for 12 h. N binding configurations of sample consist of pyridine N, quaternary N, and pyridine-N oxides. N doping is accompanied by the reduction of GO with decreases in oxygen levels from 34.8% in GO down to 8.5% in that of N-doped graphene. Meanwhile, the sample exhibits excellent N-doped thermal stability. Electrical measurements demonstrate that products have higher capacitive performance than that of pure graphene, the maximum specific capacitance of 144.6 F/g can be obtained which ascribe the pseudocapacitive effect from the N-doping. The samples also show excellent long-term cycle stability of capacitive performance.

Highly concentrated, stable nitrogen-doped graphene for supercapacitors: Simultaneous doping and reduction

Science.gov (United States)

Jiang, Baojiang; Tian, Chungui; Wang, Lei; Sun, Li; Chen, Chen; Nong, Xiaozhen; Qiao, Yingjie; Fu, Honggang

2012-02-01

In this work, we developed a concentrated ammonia-assisted hydrothermal method to obtain N-doped graphene sheets by simultaneous N-doping and reduction of graphene oxide (GO) sheets. The effects of hydrothermal temperature on the surface chemistry and the structure of N-doped graphene sheets were also investigated. X-ray photoelectron spectroscopy (XPS) study of N-doped graphene reveals that the highest doping level of 7.2% N is achieved at 180 °C for 12 h. N binding configurations of sample consist of pyridine N, quaternary N, and pyridine-N oxides. N doping is accompanied by the reduction of GO with decreases in oxygen levels from 34.8% in GO down to 8.5% in that of N-doped graphene. Meanwhile, the sample exhibits excellent N-doped thermal stability. Electrical measurements demonstrate that products have higher capacitive performance than that of pure graphene, the maximum specific capacitance of 144.6 F/g can be obtained which ascribe the pseudocapacitive effect from the N-doping. The samples also show excellent long-term cycle stability of capacitive performance.

Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant

KAUST Repository

Matsuoka, Hirofumi; Kanahashi, Kaito; Tanaka, Naoki; Shoji, Yoshiaki; Li, Lain-Jong; Pu, Jiang; Ito, Hiroshi; Ohta, Hiromichi; Fukushima, Takanori; Takenobu, Taishi

2018-01-01

Hole carrier doping into single-crystalline transition metal dichalcogenide (TMDC) films can be achieved with various chemical reagents. However, large-area polycrystalline TMDC monolayers produced by a chemical vapor deposition (CVD) growth method have yet to be chemically doped. Here, we report that a salt of a two-coordinate boron cation, Mes2B+ (Mes: 2,4,6-trimethylphenyl group), with a chemically stable tetrakis(pentafluorophenyl)borate anion, [(C6F5)4B]−, can serve as an efficient hole-doping reagent for large-area CVD-grown tungsten diselenide (WSe2) films. Upon doping, the sheet resistance of large-area polycrystalline WSe2 monolayers decreased from 90 GΩ/sq to 3.2 kΩ/sq.

Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant

KAUST Repository

Matsuoka, Hirofumi

2018-01-18

Hole carrier doping into single-crystalline transition metal dichalcogenide (TMDC) films can be achieved with various chemical reagents. However, large-area polycrystalline TMDC monolayers produced by a chemical vapor deposition (CVD) growth method have yet to be chemically doped. Here, we report that a salt of a two-coordinate boron cation, Mes2B+ (Mes: 2,4,6-trimethylphenyl group), with a chemically stable tetrakis(pentafluorophenyl)borate anion, [(C6F5)4B]−, can serve as an efficient hole-doping reagent for large-area CVD-grown tungsten diselenide (WSe2) films. Upon doping, the sheet resistance of large-area polycrystalline WSe2 monolayers decreased from 90 GΩ/sq to 3.2 kΩ/sq.

Ho3+-doped AlF3-TeO2-based glass fibers for 2.1 µm laser applications

Science.gov (United States)

Wang, S. B.; Jia, Z. X.; Yao, C. F.; Ohishi, Y.; Qin, G. S.; Qin, W. P.

2017-05-01

Ho3+-doped AlF3-TeO2-based glass fibers based on AlF3-BaF2-CaF2-YF3-SrF2-MgF2-TeO2 glasses are fabricated by using a rod-in-tube method. The glass rod including a core and a thick cladding layer is prepared by using a suction method, where the thick cladding layer is used to protect the core from the effect of surface crystallization during the fiber drawing. By inserting the glass rod into a glass tube, the glass fibers with relatively low loss (~2.3 dB m-1 @ 1560 nm) are prepared. By using a 38 cm long Ho3+-doped AlF3-TeO2-based glass fiber as the gain medium and a 1965 nm fiber laser as the pump source, 2065 nm lasing is obtained for a threshold pump power of ~220 mW. With further increasing the pump power to ~325 mW, the unsaturated output power of the 2065 nm laser is about 82 mW and the corresponding slope efficiency is up to 68.8%. The effects of the gain fiber length on the lasing threshold, the slope efficiency, and the operating wavelength are also investigated. Our experimental results show that Ho3+-doped AlF3-TeO2-based glass fibers are promising gain media for 2.1 µm laser applications.

Gemcitabine and capecitabine for heavily pre-treated metastatic colorectal cancer patients

DEFF Research Database (Denmark)

Spindler, Karen-Lise G; Pallisgaard, Niels; Andersen, Rikke F

2014-01-01

AIM: We investigated the efficacy and safety of capecitabine and gemcitabin (GemCap) in heavily pre-treated, therapy-resistant metastatic colorectal cancer (mCRC) patients and the clinical importance of cell-free DNA (cfDNA) measurement. PATIENTS AND METHODS: Patients' inclusion criteria included...

Scintillation properties and X-ray irradiation hardness of Ce3+-doped Gd2O3-based scintillation glass

International Nuclear Information System (INIS)

Liu, Liwan; Shao, Chongyun; Zhang, Yu; Liao, Xili; Yang, Qiuhong; Hu, Lili; Chen, Danping

2016-01-01

Ce 3+ -doped Gd 2 O 3 -based scintillation glasses are prepared within an air or CO atmosphere. The effects of fluorine, lutetium, barium, and the melting atmosphere on the optical properties, scintillation properties and irradiation hardness are studied. Absorption spectra, luminescence spectra under UV and X-ray excitation, and the X-ray radiation-induced spectra are presented. The results show that the density can be increased by doping with fluorine, lutetium and barium. The luminescence intensity decreases after X-ray irradiation. Because of charge transfer quenching, fluorine and lutetium enhance the UV-excited and X-ray excited luminescence intensity, but barium decreases. Moreover, fluorine and lutetium are advantageous to irradiation hardness while barium is not. In addition, a non-reducing atmosphere provides a higher irradiation hardness than a reducing atmosphere. Fluorine-doped glass is promising to enhance luminescence intensity, promote irradiation hardness, and increase the density.

Molecular modeling of the conductivity changes of the emeraldine base polyaniline due to protonic acid doping

NARCIS (Netherlands)

Chen, X.; Yuan, C.A.; Wong, C.K.Y.; Zhang, G.

2012-01-01

We propose a molecular modeling strategy, which is capable of predicting the conductivity change of emeraldine base polyaniline polymer due to different degree of protonic acid doping. The method is comprised of two key steps: (1) generating the amorphous unit cells with given number of polymer

Screening in veterinary drug analysis and sports doping control based on full-scan, accurate-mass spectrometry

NARCIS (Netherlands)

Peters, R.J.B.; Stolker, A.A.M.; Mol, J.G.J.; Lommen, A.; Lyris, E.; Angelis, Y.S.; Vonaparti, A.; Stamou, M.; Georgakopoulos, C.G.; Nielen, M.W.F.

2010-01-01

A common trend in food contaminants and sports doping control is towards a limited number of targeted, full-scan, accurate-mass spectrometry (MS) methods based on time-of-flight (TOF) or Fourier-transform orbital trap (Orbitrap) mass analyzers. Retrospective analysis of the full-scan datasets of

High-Performance Doping-Free Hybrid White OLEDs Based on Blue Aggregation-Induced Emission Luminogens.

Science.gov (United States)

Liu, Baiquan; Nie, Han; Lin, Gengwei; Hu, Shiben; Gao, Dongyu; Zou, Jianhua; Xu, Miao; Wang, Lei; Zhao, Zujin; Ning, Honglong; Peng, Junbiao; Cao, Yong; Tang, Ben Zhong

2017-10-04

Doping-free white organic light-emitting diodes (DF-WOLEDs) have aroused research interest because of their simple properties. However, to achieve doping-free hybrid WOLEDs (DFH-WOLEDs), avoiding aggregation-caused quenching is challenging. Herein, blue luminogens with aggregation-induced emission (AIE) characteristics, for the first time, have been demonstrated to develop DFH-WOLEDs. Unlike previous DFH-WOLEDs, both thin (10 nm) AIE luminogen (AIEgen) can be used for devices, enhancing the flexibility. Two-color devices show (i) pure-white emission, (ii) high CRI (85), and (iii) high efficiency. Particularly, 19.0 lm W 1- is the highest for pure-white DF-WOLEDs, while 35.0 lm W 1- is the best for two-color hybrid WOLEDs with CRI ≥ 80. A three-color DFH-WOLED shows broad color-correlated temperature span (2301-11628 K), (i) the first sunlight-like OLED (2500-8000 K) operating at low voltages, (ii) the broadest span among sunlight-like OLED, and (iii) possesses comparable efficiency with the best doping counterpart. Another three-color DFH-WOLED exhibits CRI > 90 at ≥3000 cd m -2 , (i) the first DF-WOLED with CRI ≥ 90 at high luminances, and (ii) the CRI (92.8) is not only the highest among AIE-based WOLEDs but also the highest among DF-WOLEDs. Such findings may unlock an alternative concept to develop DFH-WOLEDs.

Lithium ion conducting biopolymer electrolyte based on pectin doped with Lithium nitrate

Science.gov (United States)

Manjuladevi, R.; Selvin, P. Christopher; Selvasekarapandian, S.; Shilpa, R.; Moniha, V.

2018-04-01

The Biopolymer electrolyte based on pectin doped with lithium nitrate of different concentrations have been prepared by solution casting technique. The decrease in crystalline nature of the biopolymer has been identified by XRD analyses. The complex formation between the polymer and the salt has been revealed using FTIR analysis. The ionic conductivity has been explored using A.C. impedance spectroscopy which reveals that the biopolymer containing 30 wt% Pectin: 70wt%LiNO3 has highest ionic conductivity of 3.97 × 10-3 Scm-1.

Opinion paper: scientific, philosophical and legal consideration of doping in sports.

Science.gov (United States)

Negro, Massimo; Marzullo, Natale; Caso, Francesca; Calanni, Luca; D'Antona, Giuseppe

2018-04-01

The term doping is generally used to indicate practices based on the use of performance-enhancing drugs (PEDs) or the abuse of medical therapies. Mostly analysed by doctors and officials, doping nevertheless also requires a philosophical consideration to avoid being simplistically portrayed as an isolated practice. To do this, we need to pay attention to the contradictions and paradoxes in the modern approach to doping in sport. In this context, doping is not only relevant to the health of an individual involved in the violation of World Anti-Doping Agency (WADA) criteria, but it actually represents a double-edged phenomenon containing ethical and legal points of view. Several philosophical items affect the ethics of doping. While, indeed, through a deontological vision it is easy to morally condemn an athlete who takes the decision to turn to doping, the same condemnation becomes difficult when the practice of doping is compared with the strong social demand of winners in every field of life. This point must be considered to prevent doping from becoming accepted as a daily practice to excel at all costs and regarded not only as normal but as a necessity for those participating in sport at both an amateur and professional level. Furthermore, a complete discussion on doping has to consider not only the philosophy of performance-enhancing drug abuse, but also the widespread practice of an inappropriate and excessive intake of certain dietary supplements with the unique and obsessive purpose (similar to doping) of increasing physical or mental performance. Based on the above, the aim of this paper is to provide a critical opinion of the doping problem and its related practices and analyze possible solutions considering issues that go beyond the impact of doping on health and reflect on whether it is right or not that an athlete does all he can to improve his performance.

Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes

Science.gov (United States)

Zhang, Yiping; Zhang, Zi-Hui; Tan, Swee Tiam; Hernandez-Martinez, Pedro Ludwig; Zhu, Binbin; Lu, Shunpeng; Kang, Xue Jun; Sun, Xiao Wei; Demir, Hilmi Volkan

2017-01-01

Due to the limitation of the hole injection, p-type doping is essential to improve the performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs). In this work, we propose and show a depletion-region Mg-doping method. Here we systematically analyze the effectiveness of different Mg-doping profiles ranging from the electron blocking layer to the active region. Numerical computations show that the Mg-doping decreases the valence band barrier for holes and thus enhances the hole transportation. The proposed depletion-region Mg-doping approach also increases the barrier height for electrons, which leads to a reduced electron overflow, while increasing the hole concentration in the p-GaN layer. Experimentally measured external quantum efficiency indicates that Mg-doping position is vitally important. The doping in or adjacent to the quantum well degrades the LED performance due to Mg diffusion, increasing the corresponding nonradiative recombination, which is well supported by the measured carrier lifetimes. The experimental results are well numerically reproduced by modifying the nonradiative recombination lifetimes, which further validate the effectiveness of our approach.

Effects of reduction temperature on the optoelectronic properties of diodes based on n-type Si and reduced graphene oxide doped with a conductive polymer

International Nuclear Information System (INIS)

Zeng, Jian-Jhou; Lin, Yow-Jon; Ruan, Cheng-He; Lin, Jian-Huang

2013-01-01

The effect of reduction temperature on the optoelectronic properties of diodes based on n-type Si and reduced graphene oxide (RGO) doped with a conductive polymer [poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS)] was examined in this study. It is found that conductivity of RGO-doped PEDOT:PSS films increases with increasing reduction temperature of graphene oxide (GO) sheets. The improvement of electrical conductivity is considered to mainly come from the carrier mobility enhancement. In addition, the ideality factor of n-type Si/RGO-doped PEDOT:PSS diodes decreases with increasing reduction temperature of GO sheets. The device-performance improvement originates from high-mobility hole transport combined with long-lifetime electron trapping in the RGO-doped PEDOT:PSS film. In addition, note that a suitable reduction temperature is an important issue for improving the device performance. (paper)

Health-enhancing doping controls

DEFF Research Database (Denmark)

Christiansen, Ask Vest

2010-01-01

Editorial published at International Network of Humanistic Doping Research (INHDR) website: http://www.doping.au.dk/en/online-resources/editorials/......Editorial published at International Network of Humanistic Doping Research (INHDR) website: http://www.doping.au.dk/en/online-resources/editorials/...

Highly sensitive miniature fluidic flowmeter based on an FBG heated by Co2+-doped fiber

NARCIS (Netherlands)

Liu, Z.; Htein, L.; Cheng, L.K.; Martina, Q.; Jansen, R.; Tam, H.Y.

2017-01-01

In this paper, we present a miniature fluidic flow sensor based on a short fiber Bragg grating inscribed in a single mode fiber and heated by Co2+-doped multimode fibers. The proposed flow sensor was employed to measure the flow rates of oil and water, showing good sensitivity of 0.339 nm/(m/s) and

Oxygen-doped zirconium nitride based transparent resistive random access memory devices fabricated by radio frequency sputtering method

Energy Technology Data Exchange (ETDEWEB)

Kim, Hee-Dong, E-mail: khd0708@sejong.ac.kr [Department of Electrical Engineering, Sejong University, Neungdong-ro 209, Gwangjin-gu, Seoul 143-747 (Korea, Republic of); Yun, Min Ju [Department of Electrical Engineering, Sejong University, Neungdong-ro 209, Gwangjin-gu, Seoul 143-747 (Korea, Republic of); Kim, Kyeong Heon [School of Electrical Engineering, Korea University, Anam-dong, Sungbuk-gu, Seoul 163-701 (Korea, Republic of); Kim, Sungho, E-mail: sungho85.kim@sejong.ac.kr [Department of Electrical Engineering, Sejong University, Neungdong-ro 209, Gwangjin-gu, Seoul 143-747 (Korea, Republic of)

2016-08-05

In this work, we present a feasibility of bipolar resistive switching (RS) characteristics for Oxygen-doped zirconium nitride (O-doped ZrN{sub x}) films, produced by sputtering method, which shows a high optical transmittance of approximately 78% in the visible region as well as near ultra-violet region. In addition, in a RS test, the device has a large current ratio of 5 × 10{sup 3} in positive bias region and 5 × 10{sup 5} in negative bias region. Then, to evaluate an ability of data storage for the proposed memory devices, we measured a retention time for 10{sup 4} s at room temperature (RT) and 85 °C as well. As a result, the set and reset states were stably maintained with a current ratio of ∼10{sup 2} at 85 °C to ∼10{sup 3} at RT. This result means that the transparent memory by controlling the working pressure during sputtering process to deposit the ZrN{sub x} films could be a milestone for future see-through electronic devices. - Highlights: • The resistive switching characteristics of the transparent O-doped ZrN{sub x}-based RRAM cells have investigated. • Oxygen doping concentration within ZrN{sub x} is optimized using working pressure of sputter. • Long retention time were observed.

Investigation of the properties of carbon-base nanostructures doped YBa_2Cu_3O_7_−_δ high temperature superconductor

International Nuclear Information System (INIS)

Dadras, Sedigheh; Ghavamipour, Mahshid

2016-01-01

In this research, we have investigated the effects of three samples of carbon-base nanostructures (carbon nanoparticles, carbon nanotubes and silicon carbide nanoparticles) doping on the properties of Y_1Ba_2Cu_3O_7_−_δ (YBCO) high temperature superconductor. The pure and doped YBCO samples were synthesized by sol–gel method and characterized by resistivity versus temperature (ρ–T), current versus voltage (I–V), through X-ray diffraction (XRD) and scanning electron microscope (SEM) analysis. The results confirmed that for all the samples, the orthorhombic phase of YBCO compound is formed. We found that the pinning energy and critical current density of samples increase by adding carbon nanostructures to YBCO compound. Also critical temperature is improved by adding carbon nanotubes to YBCO compound, while it does not change much for carbon and silicon carbide nanoparticles doped compounds. Furthermore, the samples were characterized by UV–vis spectroscopy in 300 K and the band gap of the samples was determined. We found that the carbon nanotubes doping decreases YBCO band gap in normal state from 1.90 eV to 1.68 eV, while carbon and SiC nanoparticles doping increases it to 2.20 and 3.37 eV respectively.

Electrochemical Biosensor Based on Boron-Doped Diamond Electrodes with Modified Surfaces

Directory of Open Access Journals (Sweden)

Yuan Yu

2012-01-01

Full Text Available Boron-doped diamond (BDD thin films, as one kind of electrode materials, are superior to conventional carbon-based materials including carbon paste, porous carbon, glassy carbon (GC, carbon nanotubes in terms of high stability, wide potential window, low background current, and good biocompatibility. Electrochemical biosensor based on BDD electrodes have attracted extensive interests due to the superior properties of BDD electrodes and the merits of biosensors, such as specificity, sensitivity, and fast response. Electrochemical reactions perform at the interface between electrolyte solutions and the electrodes surfaces, so the surface structures and properties of the BDD electrodes are important for electrochemical detection. In this paper, the recent advances of BDD electrodes with different surfaces including nanostructured surface and chemically modified surface, for the construction of various electrochemical biosensors, were described.

Improving the electrochemical properties of nanosized LiFePO4-based electrode by boron doping

International Nuclear Information System (INIS)

Trócoli, Rafael; Franger, Sylvain; Cruz, Manuel; Morales, Julián; Santos-Peña, Jesús

2014-01-01

Highlights: • Thermal treatment of boron phosphate with LiFePO 4 provides electrode materials with high performance in lithium half-cells: 160 mAh·g -1 (90% of theoretical capacity) under C/5 rate • The products are composites containing boron-modified LiFePO 4 , FePO 4 and an amorphous phase with ionic diffusion properties • The boron treatment affects textural, conductive and lithium diffusivity of the electrode material leading to higher performance • A limited boron-doping of the phospholivine structure is observed - Abstract: Electrode materials with homogeneous distribution of boron were obtained by heating mixtures of nanosized carbon-coated lithium iron phosphate and BPO 4 in 3-9% weight at 700 °C. The materials can be described as nanocomposites containing i) LiFePO 4 , possibly doped with a low amount of boron, ii) FePO 4 and iii) an amorphous layer based on Li 4 P 2 O 7 -derived material that surrounds the phosphate particles. The thermal treatment with BPO 4 also triggered changes in the carbon coating graphitic order. Galvanostatic and voltammetric studies in lithium half-cells showed smaller polarisation, higher capacity and better cycle life for the boron-doped composites. For instance, one of the solids, called B 6 -LiFePO 4 , provided close to 150 and 140 mAhg -1 (87% and 81% of theoretical capacity, respectively) under C/2.5 and C regimes after several cycles. Improved specific surface area, carbon graphitization, conductivity and lithium ion diffusivity in the boron-doped phospholivine network account for this excellent rate performance. The properties of an amorphous layer surrounding the phosphate particles also account for such higher performance

Study of Si-Ge interdiffusion with phosphorus doping

KAUST Repository

Cai, Feiyang; Anjum, Dalaver H.; Zhang, Xixiang; Xia, Guangrui

2016-01-01

Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75doping, and a dislocation density of 108 to 109 cm−2 range were studied. The P-doped sample shows an accelerated Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

Study of Si-Ge interdiffusion with phosphorus doping

KAUST Repository

Cai, Feiyang

2016-10-28

Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75doping, and a dislocation density of 108 to 109 cm−2 range were studied. The P-doped sample shows an accelerated Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

Fabrication and characterization of boron-doped nanocrystalline diamond-coated MEMS probes

Science.gov (United States)

Bogdanowicz, Robert; Sobaszek, Michał; Ficek, Mateusz; Kopiec, Daniel; Moczała, Magdalena; Orłowska, Karolina; Sawczak, Mirosław; Gotszalk, Teodor

2016-04-01

Fabrication processes of thin boron-doped nanocrystalline diamond (B-NCD) films on silicon-based micro- and nano-electromechanical structures have been investigated. B-NCD films were deposited using microwave plasma assisted chemical vapour deposition method. The variation in B-NCD morphology, structure and optical parameters was particularly investigated. The use of truncated cone-shaped substrate holder enabled to grow thin fully encapsulated nanocrystalline diamond film with a thickness of approx. 60 nm and RMS roughness of 17 nm. Raman spectra present the typical boron-doped nanocrystalline diamond line recorded at 1148 cm-1. Moreover, the change in mechanical parameters of silicon cantilevers over-coated with boron-doped diamond films was investigated with laser vibrometer. The increase of resonance to frequency of over-coated cantilever is attributed to the change in spring constant caused by B-NCD coating. Topography and electrical parameters of boron-doped diamond films were investigated by tapping mode AFM and electrical mode of AFM-Kelvin probe force microscopy (KPFM). The crystallite-grain size was recorded at 153 and 238 nm for boron-doped film and undoped, respectively. Based on the contact potential difference data from the KPFM measurements, the work function of diamond layers was estimated. For the undoped diamond films, average CPD of 650 mV and for boron-doped layer 155 mV were achieved. Based on CPD values, the values of work functions were calculated as 4.65 and 5.15 eV for doped and undoped diamond film, respectively. Boron doping increases the carrier density and the conductivity of the material and, consequently, the Fermi level.

Electron-doping by hydrogen in transition-metal dichalcogenides

Science.gov (United States)

Oh, Sehoon; Im, Seongil; Choi, Hyoung Joon

Using first-principles calculations, we investigate the atomic and electronic structures of 2H-phase transition-metal dichalcogenides (TMDC), 2H-MX2, with and without defects, where M is Mo or W and X is S, Se or Te. We find that doping of atomic hydrogen on 2H-MX2 induces electron doping in the conduction band. To understand the mechanism of this electron doping, we analyze the electronic structures with and without impurities. We also calculate the diffusion energy barrier to discuss the spatial stability of the doping. Based on these results, we suggest a possible way to fabricate elaborately-patterned circuits by modulating the carrier type of 2H-MoTe2. We also discuss possible applications of this doping in designing nano-devices. This work was supported by NRF of Korea (Grant No. 2011-0018306) and KISTI supercomputing center (Project No. KSC-2016-C3-0052).

Neutron transmutation doping of silicon

International Nuclear Information System (INIS)

Mireshghi, A.

1989-01-01

After a brief review of the theoretical bases for Neutron Transmutation Doping (NTD) process, the equations necessary for calculation of doped crystal resistivity (p) in terms of parameters of irradiation, such as time and neutron flux, are derived. The procedure for production of NTD-Si is described, important considerations are outlined and the advantages and applications are introduced. Also, an assessment is made of the practicality of using AEOI Research Reactor thermal neutron irradiation facilities for production of NTD-Si, which is concluded to be possible at reactor nominal operation conditions

Investigation of doped Perovskite systems RAIO3 using density functional theory based electronic structure and thermoelectric studies

International Nuclear Information System (INIS)

Sandeep; Ghimire, M. P.; Thapa, R. K.; Rai, D. P.; Shankar, A

2016-01-01

Samarium doping effects on the thermoelectric properties in Eu 1-x Sm x AlO 3 (x=0%, 50%, and 100%) were studied using first principles calculations based thermal transport property measurement. The result indicate that the compound is an intrinsic n-type material. Samarium doping has a positive effect on the overall thermoelectric performance of the Eu 1-x Sm x AlO 3 system, with sharp increase in figure of merit (ZT) observed when x=0, 50 and 100% up to 150K. Compared to x=0 and 100%, the case of x=50% was found to have more positive increment in ZT value suggesting that the doing to have positive effect on figure of merit in Eu 1-x Sm x AlO 3 . Furthermore, all the samples show stable thermoelectric compatibility factors over a broad temperature range from 700 to 1000 K, which could have great benefits for their practical applications. It is concluded that the overall thermoelectric performance of the Eu 1-x Sm x AlO 3 could be highly enhanced using doping techniques. (paper)

Few-Layer WSe2 Schottky Junction-Based Photovoltaic Devices through Site-Selective Dual Doping.

Science.gov (United States)

Ko, Seungpil; Na, Junhong; Moon, Young-Sun; Zschieschang, Ute; Acharya, Rachana; Klauk, Hagen; Kim, Gyu-Tae; Burghard, Marko; Kern, Klaus

2017-12-13

Ultrathin sheets of two-dimensional (2D) materials like transition metal dichalcogenides have attracted strong attention as components of high-performance light-harvesting devices. Here, we report the implementation of Schottky junction-based photovoltaic devices through site-selective surface doping of few-layer WSe 2 in lateral contact configuration. Specifically, whereas the drain region is covered by a strong molecular p-type dopant (NDP-9) to achieve an Ohmic contact, the source region is coated with an Al 2 O 3 layer, which causes local n-type doping and correspondingly an increase of the Schottky barrier at the contact. By scanning photocurrent microscopy using green laser light, it could be confirmed that photocurent generation is restricted to the region around the source contact. The local photoinduced charge separation is associated with a photoresponsivity of up to 20 mA W -1 and an external quantum efficiency of up to 1.3%. The demonstrated device concept should be easily transferrable to other van der Waals 2D materials.

Facile hydrothermal method for synthesizing nitrogen-doped graphene nanoplatelets using aqueous ammonia: dispersion, stability in solvents and thermophysical performances

Science.gov (United States)

Shafiah Shazali, Siti; Amiri, Ahmad; Zubir, Mohd. Nashrul Mohd; Rozali, Shaifulazuar; Zakuan Zabri, Mohd; Sabri, Mohd Faizul Mohd

2018-03-01

A simple and green approach has been developed to synthesize nitrogen-doped graphene nanoplatelets (N-doped GNPs) for mass production with a very high stability in different solvents e.g. water, ethylene glycol, methanol, ethanol, and 1-hexanol. The strategy is based on mild oxidation of GNPs using hydrogen peroxide and doping with nitrogen using hydrothermal process. The modification of N-doped GNPs was demonstrated by FTIR, TGA, XPS, Raman spectroscopy and high resolution-transmission electron microscope (HRTEM). Further study was carried out by using N-doped GNPs as an additive to prepare different colloidal dispersions. Water-based N-doped GNPs, methanol-based N-doped GNPs, ethanol-based N-doped GNPs, ethylene-glycol based N-doped GNPs and 1-hexanol-based N-doped GNPs dispersions at 0.01 wt.% shown great colloidal stabilities, indicating 17%, 29%, 33%, 18%, and 43% sedimentations after a 15-days period, respectively. The thermophysical properties e.g., viscosity and thermal conductivity of water-based N-doped GNP nanofluids were also evaluated for different weight concentrations of 0.100, 0.075, 0.050, and 0.025 wt.%. Through this, it is found that the obtained dispersions have great potential to be used as working fluids for industrial thermal systems.

Electronic structure of B-doped diamond: A first-principles study

Directory of Open Access Journals (Sweden)

T. Oguchi

2006-01-01

Full Text Available Electronic structure of B-doped diamond is studied based on first-principles calculations with supercell models for substitutional and interstitial doping at 1.5–3.1 at.% B concentrations. Substitutional doping induces holes around the valence-band maximum in a rigid-band fashion. The nearest neighbor C site to B shows a large energy shift of 1s core state, which may explain reasonably experimental features in recent photoemission and X-ray absorption spectra. Doping at interstitial Td site is found to be unstable compared with that at the substitutional site

Potential thermoelectric performance of hole-doped Cu2O

International Nuclear Information System (INIS)

Chen, Xin; Parker, David; Du, Mao-Hua; Singh, David J

2013-01-01

High thermoelectric performance in oxides requires stable conductive materials that have suitable band structures. Here we show, based on an analysis of the thermopower and related properties using first-principles calculations and Boltzmann transport theory in the relaxation time approximation, that hole-doped Cu 2 O may be such a material. We find that hole-doped Cu 2 O has a high thermopower of above 200 μV K −1 even with doping levels as high as 5.2 × 10 20 cm −3 at 500 K, mainly attributed to the heavy valence bands of Cu 2 O. This is reminiscent of the cobaltate family of high-performance oxide thermoelectrics and implies that hole-doped Cu 2 O could be an excellent thermoelectric material if suitably doped. (paper)

Anomalous magnetism of superconducting Mg-doped InN film

Directory of Open Access Journals (Sweden)

P. H. Chang

2016-02-01

Full Text Available We report on the Meissner effect of Mg-doped InN film with superconducting transition onset temperature Tc,onset of 5 K. Mg-doped InN is magnetically ordered and exhibits a simultaneous first-order magnetic and electric transition near 50 K. Its behavior is similar to that of iron-based superconductors. A strong correlation is proposed to exist between structural distortion and superconductivity when Mg is doped into InN. The suppression of magnetic ordering close to Tc by doping is further demonstrated by anisotropic magnetoresistance and M-H measurements. The findings suggest that the superconducting mechanism in the system may not be conventional BCS.

Application of Surfactant Micellar Solutions as Extractants and Mobile Phases for TLC-Determination of Purine Bases and Doping Agents in Biological Liquids

Directory of Open Access Journals (Sweden)

Daria Victorovna Yedamenko

2015-04-01

Full Text Available Separation of caffeine and its metabolites (theophylline and theobromine and doping agents (spironolactone, propranolol, and ephedrine and determination of caffeine in serum sample and propranolol and ephedrine in urine were studied on normal-phase thin layers (“Sorbfil-UV-254”. Aqueous organic solvents and aqueous micellar surfactant solutions were compared as the mobile phases for separation. The acceptable separation of purine bases and doping agents was achieved by micellar Thin Layer Chromatography and normal-phase Thin Layer Chromatography. Anionic surfactant solution with added 1-propanol was the best eluent as for caffeine, theophylline, and theobromine separation, as for doping agents. The best characteristics of caffeine extraction from serum, and propranolol and ephedrine from urine were achieved when micellar eluent based on non-ionic Tween-80 surfactant was used. DOI: http://dx.doi.org/10.17807/orbital.v7i1.632

Sanctions for doping in sport

Directory of Open Access Journals (Sweden)

Mandarić Sanja

2014-01-01

Full Text Available Top-level sport imposes new and more demanding physical and psychological pressures, and the desire for competing, winning and selfassertion leads athletes into temptation to use prohibited substances in order to achieve the best possible results. Regardless of the fact that the adverse consequences of prohibited substances are well-known, prestige and the need to dominate sports arenas have led to their use in sports. Doping is one of the biggest issues in sport today, and the fight against it is a strategic objective on both global and national levels. World Anti-Doping Agency, the International Olympic Committee, international sports federations, national anti-doping agencies, national sports federations, as well as governments and their repressive apparatuses are all involved in the fight against doping in sport. This paper points to a different etymology and phenomenology of doping, the beginnings of doping in sport, sports doping scandals as well as the most important international instruments regulating this issue. Also, there is a special reference in this paper to the criminal and misdemeanor sanctions for doping in sport. In Serbia doping in sport is prohibited by the Law on Prevention of Doping in Sports which came into force in 2005 and which prescribes the measures and activities aimed at prevention of doping in sport. In this context, the law provides for the following three criminal offenses: use of doping substances, facilitating the use of doping substances, and unauthorized production and putting on traffic of doping substances. In addition, aiming at curbing the abuse of doping this law also provides for two violations. More frequent and repetitive doping scandals indicate that doping despite long-standing sanctions is still present in sports, which suggests that sanctions alone have not given satisfactory results so far.

Fabrication and characterization of Pd/Cu doped ZnO/Si and Ni/Cu doped ZnO/Si Schottky diodes

Energy Technology Data Exchange (ETDEWEB)

Agarwal, Lucky; Singh, Brijesh Kumar; Tripathi, Shweta [Department of Electronics & Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad 211004 (India); Chakrabarti, P., E-mail: pchakrabarti.ece@iitbhu.ac.in [Department of Electronics & Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad 211004 (India); Department of Electronics Engineering, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005 (India)

2016-08-01

In this paper, fabrication and characterization of copper doped ZnO (Cu doped ZnO) based Schottky devices have been reported. Cu doped ZnO thin films have been deposited on p-Si (100) samples by the sol-gel spin coating method. X-Ray diffraction (XRD) and atomic force microscopy (AFM) studies have been done in order to evaluate the structural and morphological properties of the film. The optical properties of the film have been determined by using variable angle ellipsometry. Further, Seebeck measurement of the deposited Cu doped ZnO film leads to positive Seebeck coefficient confirming the p-type conductivity of the sample. The resistivity and acceptor concentration of the film has also been evaluated using four probe measurement system. Pd and Ni metals have been deposited on separate Cu doped ZnO thin film samples using low cost thermal evaporation method to form Schottky contacts. The electrical characterization of the Schottky diode has been performed by semiconductor device analyzer (SDA). Electrical parameters such as barrier height, ideality factor, reverse saturation current and rectification ratio have also been determined for the as-prepared Schottky diode using conventional thermionic emission model and Cheung's method. - Highlights: • Fabrication of sol-gel derived Cu doped ZnO (p-type) Schottky contact proposed. • The p-type Conductivity of the sample confirmed by Seebeck Measurement. • Pd and Ni deposited on Cu doped ZnO film to form Schottky contacts. • Cu doped ZnO expected to emerge as a potential material for thin film solar cells.

Fabrication and characterization of Pd/Cu doped ZnO/Si and Ni/Cu doped ZnO/Si Schottky diodes

International Nuclear Information System (INIS)

Agarwal, Lucky; Singh, Brijesh Kumar; Tripathi, Shweta; Chakrabarti, P.

2016-01-01

In this paper, fabrication and characterization of copper doped ZnO (Cu doped ZnO) based Schottky devices have been reported. Cu doped ZnO thin films have been deposited on p-Si (100) samples by the sol-gel spin coating method. X-Ray diffraction (XRD) and atomic force microscopy (AFM) studies have been done in order to evaluate the structural and morphological properties of the film. The optical properties of the film have been determined by using variable angle ellipsometry. Further, Seebeck measurement of the deposited Cu doped ZnO film leads to positive Seebeck coefficient confirming the p-type conductivity of the sample. The resistivity and acceptor concentration of the film has also been evaluated using four probe measurement system. Pd and Ni metals have been deposited on separate Cu doped ZnO thin film samples using low cost thermal evaporation method to form Schottky contacts. The electrical characterization of the Schottky diode has been performed by semiconductor device analyzer (SDA). Electrical parameters such as barrier height, ideality factor, reverse saturation current and rectification ratio have also been determined for the as-prepared Schottky diode using conventional thermionic emission model and Cheung's method. - Highlights: • Fabrication of sol-gel derived Cu doped ZnO (p-type) Schottky contact proposed. • The p-type Conductivity of the sample confirmed by Seebeck Measurement. • Pd and Ni deposited on Cu doped ZnO film to form Schottky contacts. • Cu doped ZnO expected to emerge as a potential material for thin film solar cells.

Synthesis and study of the magnetic properties of thallium-based over-doped superconducting compounds

International Nuclear Information System (INIS)

Opagiste, C.

1994-07-01

The synthesis, structure and magnetic properties of the normal and superconducting states of over-doped Tl 2 Ba 2 Cu O 6±x and Tl 2 Ba 2 Ca Cu 2 O 8±x superconducting compounds, are presented. Synthesis under high pressure using Tl 2 Ba 2 O 5 as a precursor avoids thallium losses and Ba Cu O 2 formation. The entire over-doped region has been investigated (Tc ranging from 0 to 92 K) and the different stability zones for the two crystallographic structures have been explored. The orthorhombic structure is shown to be stoichiometric in cations, while the tetragonal one could present thallium deficiency. Clear correlations have been established between Tc and the lattice parameters for the two phases. It has been observed that the Meissner fraction increased with Tc and that the reversibility domain was more extended for samples having a Tc near the maximal value, which must be linked to the decrease of the anisotropy with over-doping. In the reversible regime, the mixed state is affected by thermal fluctuations around Tc. Evolution of the penetration depth with Tc is examined; it shows that the optimum doped compound (maximal Tc) behaves as a BCS type superconductor. The over-doping results in a penetration depth behaviour which strongly deviates from the standard model (BCS, two fluids). The zero temperature, obtained by extrapolation, seems to be independent of the over-doping. 54 figs., 3 tabs., 168 refs

Synthesis of Doped and non-Doped Nano MgO Ceramic Membranes

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Shiraz Labib

2013-12-01

Full Text Available Doped and non-doped MgO coated thin films on alumina substrates were prepared using a chelating sol-gel method under controlled conditions to prepare nanomaterials with unprecedented properties. The effect of doping of ZnO on thermal, surface and structural properties was investigated using DTA-TG, BET and XRD respectively. Also microstructural studies and coating thickness measurements of MgO thin film were conducted using SEM. An increase in the thermal stability of MgO with increasing ZnO doping percent was observed. The increase of ZnO doping percent showed a marked decrease in the average particle size of MgO powder as a result of the replacement of some Mg2+ by Zn2+ which has similar ionic radius as Mg2+. This decrease in particle size of MgO was also related to the decrease of the degree of MgO crystalinity. The increase of ZnO doping also showed a marked decrease in coating thickness values of the prepared membranes. This decrease was related to the  mechanism of ZnO doping into a MgO crystal lattice.

Recent Development of Nanomaterial-Doped Conductive Polymers

Science.gov (United States)

Asyraf, Mohammad; Anwar, Mahmood; Sheng, Law Ming; Danquah, Michael K.

2017-12-01

Conductive polymers (CPs) have received significant research attention in material engineering for applications in microelectronics, micro-scale sensors, electromagnetic shielding, and micro actuators. Numerous research efforts have been focused on enhancing the conductivity of CPs by doping. Various conductive materials, such as metal nanoparticles and carbon-based nanoparticles, and structures, such as silver nanoparticles and graphene nanosheets, have been converted into polypyrrole and polypyrrole compounds as the precursors to developing hybrids, conjugates, or crystal nodes within the matrix to enhance the various structural properties, particularly the electrical conductivity. This article reviews nanomaterial doping of conductive polymers alongside technological advancements in the development and application of nanomaterial-doped polymeric systems. Emphasis is given to conductive nanomaterials such as nano-silver particles and carbon-based nanoparticles, graphene nano-sheets, fullerene, and carbon nanotubes (CNT) as dopants for polypyrrole-based CPs. The nature of induced electrical properties including electromagnetic absorption, electrical capacitance, and conductivities of polypyrrole systems is also discussed. The prospects and challenges associated with the development and application of CPs are also presented.

A proposed GaAs-based superlattice solar cell structure with high efficiency and high radiation tolerance

Science.gov (United States)

Goradia, Chandra; Clark, Ralph; Brinker, David

1985-01-01

A solar cell structure is proposed which uses a GaAs nipi doping superlattice. An important feature of this structure is that photogenerated minority carriers are very quickly collected in a time shorter than bulk lifetime in the fairly heavily doped n and p layers and these carriers are then transported parallel to the superlattice layers to selective ohmic contacts. Assuming that these already-separated carriers have very long recombination lifetimes, due to their being across an indirect bandgap in real space, it is argued that the proposed structure may exhibit superior radiation tolerance along with reasonably high beginning-of-life efficiency.

Materials system for intermediate temperature solid oxide fuel cells based on doped lanthanum-gallate electrolyte

Science.gov (United States)

Gong, Wenquan

2005-07-01

The objective of this work was to identify a materials system for intermediate temperature solid oxide fuel cells (IT-SOFCs). Towards this goal, alternating current complex impedance spectroscopy was employed as a tool to study electrode polarization effects in symmetrical cells employing strontium and magnesium doped lanthanum gallate (LSGM) electrolyte. Several cathode materials were investigated including strontium doped lanthanum manganite (LSM), Strontium and iron doped lanthanum cobaltate (LSCF), LSM-LSGM, and LSCF-LSGM composites. Investigated Anode materials included nickel-gadolinium or lanthanum doped cerium oxide (Ni-GDC, or Ni-LDC) composites. The ohmic and the polarization resistances of the symmetrical cells were obtained as a function of temperature, time, thickness, and the composition of the electrodes. Based on these studies, the single phase LSM electrode had the highest polarization resistance among the cathode materials. The mixed-conducting LSCF electrode had polarization resistance orders of magnitude lower than that of the LSM-LSGM composite electrodes. Although incorporating LSGM in the LSCF electrode did not reduce the cell polarization resistance significantly, it could reduce the thermal expansion coefficient mismatch between the LSCF electrodes and LSGM electrolyte. Moreover, the polarization resistance of the LSCF electrode decreased asymptotically as the electrode thickness was increased thus suggesting that the electrode thickness needed not be thicker than this asymptotic limit. On the anode side of the IT-SOFC, Ni reacted with LSGM electrolyte, and lanthanum diffusion occurred from the LSGM electrolyte to the GDC barrier layer, which was between the LSGM electrolyte and the Ni-composite anode. However, LDC served as an effective barrier layer. Ni-LDC (70 v% Ni) anode had the largest polarization resistance, while all other anode materials, i.e. Ni-LDC (50 v% Ni), Ni-GDC (70 v% NO, and Ni-GDC (50 v% Ni), had similar polarization

Doping and thrombosis in sports.

Science.gov (United States)

Lippi, Giuseppe; Banfi, Giuseppe

2011-11-01

Historically, humans have long sought to enhance their "athletic" performance to increase body weight, aggressiveness, mental concentration and physical strength, contextually reducing fatigue, pain, and improving recovery. Although regular training is the mainstay for achieving these targets, the ancillary use of ergogenic aids has become commonplace in all sports. The demarcation between ergogenic aids and doping substances or practices is continuously challenging and mostly based on perceptions regarding the corruption of the fairness of competition and the potential side effects or adverse events arising from the use of otherwise unnecessary ergogenic substances. A kaleidoscope of side effects has been associated with the use of doping agents, including behavioral, skeletal, endocrinologic, metabolic, hemodynamic, and cardiovascular imbalances. Among the various doping substances, the most striking association with thrombotic complications has been reported for androgenic anabolic steroids (i.e., cardiomyopathy, fatal and nonfatal arrhythmias, myocardial infarction [MI], intracardiac thrombosis, stroke, venous thromboembolism [VTE], limb arterial thrombosis, branch retinal vein occlusion, cerebral venous sinus thrombosis) and blood boosting (i.e., VTE and MI, especially for epoetin and analogs). The potential thrombotic complication arising from misuse of other doping agents such as the administration of cortisol, growth hormone, prolactin, cocaine, and platelet-derived preparations is instead speculative or anecdotal at best. The present article provides an overview on the epidemiological association as well as the underlying biochemical and biological mechanisms linking the practice of doping in sports with the development of thrombosis. © Thieme Medical Publishers.

Performance optimization of MOS-like carbon nanotube-FETs with realistic source/drain contacts based on electrostatic doping

International Nuclear Information System (INIS)

Zhou Hailiang; Zhang Minxuan; Hao Yue

2010-01-01

Due to carrier band-to-band-tunneling (BTBT) through channel-source/drain contacts, conventional MOS-like Carbon Nanotube Field Effect Transistors (C-CNFETs) suffer from ambipolar conductance, which deteriorates the device performance greatly. In order to reduce such ambipolar behavior, a novel device structure based on electrostatic doping is proposed and all kinds of source/drain contacting conditions are considered in this paper. The non-equilibrium Green's function (NEGF) formalism based simulation results show that, with proper choice of tuning voltage, such electrostatic doping strategy can not only reduce the ambipolar conductance but also improve the sub-threshold performance, even with source/drain contacts being of Schottky type. And these are both quite desirable in circuit design to reduce the system power and improve the frequency as well. Further study reveals that the performance of the proposed design depends strongly on the choice of tuning voltage value, which should be paid much attention to obtain a proper trade-off between power and speed in application. (semiconductor devices)

Friction and wear behaviour of Mo-W doped carbon-based coating during boundary lubricated sliding

Science.gov (United States)

Hovsepian, Papken Eh.; Mandal, Paranjayee; Ehiasarian, Arutiun P.; Sáfrán, G.; Tietema, R.; Doerwald, D.

2016-03-01

A molybdenum and tungsten doped carbon-based coating (Mo-W-C) was developed in order to provide low friction in boundary lubricated sliding condition at ambient and at high temperature. The Mo-W-C coating showed the lowest friction coefficient among a number of commercially available state-of-the-art DLC coatings at ambient temperature. At elevated temperature (200 °C), Mo-W-C coating showed a significant reduction in friction coefficient with sliding distance in contrast to DLC coatings. Raman spectroscopy revealed the importance of combined Mo and W doping for achieving low friction at both ambient and high temperature. The significant decrease in friction and wear rate was attributed to the presence of graphitic carbon debris (from coating) and 'in situ' formed metal sulphides (WS2 and MoS2, where metals were supplied from coating and sulphur from engine oil) in the transfer layer.

Structure and photoluminescence of boron and nitrogen co-doped carbon nanorods

Energy Technology Data Exchange (ETDEWEB)

Wang, B.B. [College of Chemistry and Chemical Engineering, Chongqing University of Technology, 69 Hongguang Rd, Lijiatuo, Banan District, Chongqing 400054 (China); Gao, B. [College of Computer Science, Chongqing University, Chongqing 400044 (China); Chongqing Municipal Education Examinations Authority, Chongqing 401147 (China); Zhong, X.X., E-mail: xxzhong@sjtu.edu.cn [Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Shao, R.W.; Zheng, K. [Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124 (China)

2016-07-15

Graphical abstract: Boron- and nitrogen- doped carbon nanorods. - Highlights: • The co-doping of nitrogen and boron in carbon nanorods. • The doping mechanism of nitrogen and boron in carbon nanorods by plasma. • Photoluminescence properties of nitrogen- and boron-doped carbon nanorods. - Abstract: Boron and nitrogen doped carbon nanorods (BNCNRs) were synthesized by plasma-enhanced hot filament chemical vapor deposition, where methane, nitrogen and hydrogen were used as the reaction gases and boron carbide was the boron source. The results of scanning electron microscopy, micro-Raman spectroscopy, transmission electron microscopy and X-ray photoelectron spectroscopy indicate that boron and nitrogen can be used as co-dopants in amorphous carbon nanorods. Combined with the characterization results, the doping mechanism was studied. The mechanism is used to explain the formation of different carbon materials by different methods. The photoluminescence (PL) properties of BNCNRs were studied. The PL results show that the BNCNRs generate strong green PL bands and weak blue PL bands, and the PL intensity lowered due to the doping of boron. The outcomes advance our knowledge on the synthesis and optical properties of carbon-based nanomaterials and contribute to the development of optoelectronic nanodevices based on nano-carbon mateirals.

Doping optimization of polypyrrole with toluenesulfonic acid using Box-Behnken design

International Nuclear Information System (INIS)

Syed Draman, Sarifah Fauziah; Daik, Rusli; El-Sheikh, Said M.; Latif, Famiza Abdul

2013-01-01

A three-level Box-Behnken design was employed in doping optimization of polypyrrole with toluenesulfonic acid (TSA-doped PPy). The material was synthesized via chemical oxidative polymerization using pyrrole, toluenesulfonic acid (TSA) and ammonium persulfate (APS) as monomer, dopant and oxidant, respectively. The critical factors selected for this study were concentration of dopant, molar ratio between dopant to monomer (pyrrole) and concentration of oxidant. Obtaining adequate doping level of TSA-doped PPy is crucial because it affects the charge carriers for doped PPy and usually be responsible for electronic mobility along polymeric chain. Furthermore, the doping level also affects other properties such as electrical and thermal conductivity. Doping level was calculated using elemental analysis. SEM images shows that the prepared TSA-doped PPy particles are spherical in shape with the diameters of about. The range of nanoparticles size is around 80-100 nm. The statistical analysis based on a Box–Behnken design showed that 0.01 mol of TSA, 1:1 mole ratio TSA to pyrrole and 0.25 M APS were the optimum conditions for sufficient doping level

Doping optimization of polypyrrole with toluenesulfonic acid using Box-Behnken design

Energy Technology Data Exchange (ETDEWEB)

Syed Draman, Sarifah Fauziah; Daik, Rusli [School of Chemical Sciences and Food Technology, Faculty of Science and Technology, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); El-Sheikh, Said M. [Nanostructured Materials and Nanotechnology Division, Central Metallurgical Research and Development Institute,11421 Cairo (Egypt); Latif, Famiza Abdul [Faculty of Applied Sciences, Universiti Teknologi MARA Malaysia 40450 Shah Alam, Selangor (Malaysia)

2013-11-27

A three-level Box-Behnken design was employed in doping optimization of polypyrrole with toluenesulfonic acid (TSA-doped PPy). The material was synthesized via chemical oxidative polymerization using pyrrole, toluenesulfonic acid (TSA) and ammonium persulfate (APS) as monomer, dopant and oxidant, respectively. The critical factors selected for this study were concentration of dopant, molar ratio between dopant to monomer (pyrrole) and concentration of oxidant. Obtaining adequate doping level of TSA-doped PPy is crucial because it affects the charge carriers for doped PPy and usually be responsible for electronic mobility along polymeric chain. Furthermore, the doping level also affects other properties such as electrical and thermal conductivity. Doping level was calculated using elemental analysis. SEM images shows that the prepared TSA-doped PPy particles are spherical in shape with the diameters of about. The range of nanoparticles size is around 80-100 nm. The statistical analysis based on a Box–Behnken design showed that 0.01 mol of TSA, 1:1 mole ratio TSA to pyrrole and 0.25 M APS were the optimum conditions for sufficient doping level.

Rare-earth-doped fluorozirconate fiber lasers

International Nuclear Information System (INIS)

Brierly, M.C.; France, P.W.; Moore, M.W.; Davey, S.T.

1988-01-01

Rare-earth-doped fiber lasers fabricated using silica-based fibers are rapidly becoming an established technology. Simultaneously, in the search for lower losses to achieve longer repeaterless communications links, another fiber technology based on fluorozirconate glasses is emerging. Fluorozirconate glass systems are known to be suitable laser hosts, and the authors have already reported Nd-doped fiber lasers using this technology. Recently the authors have used a 0.5-m length of 44-μm core fluorozirconate fiber doped with 1000 ppm of Nd 3+ ions in a longitudinally pumped Fabry-Perot cavity with a 90% output coupler. They observed lasing at 1.05 μm with a threshold of 33-mW launched power at 514 nm and a slope efficiency of 16.8%. The authors attribute this improvement to the higher dopant concentration, better fiber to mirror coupling, and more optimum output coupler reflectivity. In addition the same fiber used with two high-reflector mirrors at 1.35μm produced lasing at 1.35μm with a threshold of 60-mW launched power

Borazino-Doped Polyphenylenes.

Science.gov (United States)

Marinelli, Davide; Fasano, Francesco; Najjari, Btissam; Demitri, Nicola; Bonifazi, Davide

2017-04-19

The divergent synthesis of two series of borazino-doped polyphenylenes, in which one or more aryl units are replaced by borazine rings, is reported for the first time, taking advantage of the decarbonylative [4 + 2] Diels-Alder cycloaddition reaction between ethynyl and tetraphenylcyclopentadienone derivatives. Because of the possibility of functionalizing the borazine core with different groups on the aryl substituents at the N and B atoms of the borazino core, we have prepared borazino-doped polyphenylenes featuring different doping dosages and orientations. To achieve this, two molecular modules were prepared: a core and a branching unit. Depending on the chemical natures of the central aromatic module and the reactive group, each covalent combination of the modules yields one exclusive doping pattern. By means of this approach, three- and hexa-branched hybrid polyphenylenes featuring controlled orientations and dosages of the doping B 3 N 3 rings have been prepared. Detailed photophysical investigations showed that as the doping dosage is increased, the strong luminescent signal is progressively reduced. This suggests that the presence of the B 3 N 3 rings engages additional deactivation pathways, possibly involving excited states with an increasing charge-separated character that are restricted in the full-carbon analogues. Notably, a strong effect of the orientational doping on the fluorescence quantum yield was observed for those hybrid polyphenylene structures featuring low doping dosages. Finally, we showed that Cu-catalyzed 1,3-dipolar cycloaddition is also chemically compatible with the BN core, further endorsing the inorganic benzene as a versatile aromatic scaffold for engineering of molecular materials with tailored and exploitable optoelectronic properties.

Exploring Knowledge, Attitudes and Abuse Concerning Doping in Sport among Syrian Pharmacy Students

Directory of Open Access Journals (Sweden)

Mazen El-Hammadi

2013-09-01

Full Text Available This study aimed to assess pharmacy students’ knowledge about doping substances used in sport, explore their attitudes toward doping and investigate their misuse of doping drugs. A questionnaire was developed and employed to collect data from bachelor of pharmacy (BPharm students at the International University for Science and Technology (IUST. Two-hundred and eighty students participated in this self-administrated, paper-based survey. Around 90% of the students did not appear to know that narcotics, β-blockers and diuretics were used in sport as doping agents. Additionally, proportions between 60% and 80% considered vitamins, energy drinks and amino acids as substances that possess performance-enhancing effects. The main reason for doping, based on students’ response, was to improve muscular body appearance. The vast majority of students agreed that pharmacists should play a major role in promoting awareness about risks of doping. While students showed negative attitudes toward doping, approximately 15% of them, primarily males, had already tried a doping drug or might do so in the future. More than 60% of the students believed that sports-mates and friends are the most influential in encouraging them to take a doping agent. The study highlights the need to provide pharmacy students with advanced theoretical background and practical training concerning doping. This can be achieved by adopting simple, but essential, changes to the current curricula.

Reversible and Precisely Controllable p/n-Type Doping of MoTe2 Transistors through Electrothermal Doping.

Science.gov (United States)

Chang, Yuan-Ming; Yang, Shih-Hsien; Lin, Che-Yi; Chen, Chang-Hung; Lien, Chen-Hsin; Jian, Wen-Bin; Ueno, Keiji; Suen, Yuen-Wuu; Tsukagoshi, Kazuhito; Lin, Yen-Fu

2018-03-01

Precisely controllable and reversible p/n-type electronic doping of molybdenum ditelluride (MoTe 2 ) transistors is achieved by electrothermal doping (E-doping) processes. E-doping includes electrothermal annealing induced by an electric field in a vacuum chamber, which results in electron (n-type) doping and exposure to air, which induces hole (p-type) doping. The doping arises from the interaction between oxygen molecules or water vapor and defects of tellurium at the MoTe 2 surface, and allows the accurate manipulation of p/n-type electrical doping of MoTe 2 transistors. Because no dopant or special gas is used in the E-doping processes of MoTe 2 , E-doping is a simple and efficient method. Moreover, through exact manipulation of p/n-type doping of MoTe 2 transistors, quasi-complementary metal oxide semiconductor adaptive logic circuits, such as an inverter, not or gate, and not and gate, are successfully fabricated. The simple method, E-doping, adopted in obtaining p/n-type doping of MoTe 2 transistors undoubtedly has provided an approach to create the electronic devices with desired performance. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Promoting functional foods as acceptable alternatives to doping: potential for information-based social marketing approach

OpenAIRE

Petróczi Andrea; Naughton Declan P; James Ricky

2010-01-01

Abstract Background Substances with performance enhancing properties appear on a continuum, ranging from prohibited performance enhancing drugs (PED) through dietary supplements to functional foods (FF). Anti-doping messages designed to dissuade athletes from using PEDs have been typically based on moralising sport competition and/or employing scare campaigns with focus on the negative consequences. Campaigns offering comparable and acceptable alternatives are nonexistent, nor are athletes he...

Thirteen years of the fight against doping in figures.

Science.gov (United States)

Aguilar, Millán; Muñoz-Guerra, Jesús; Plata, María Del Mar; Del Coso, Juan

2017-06-01

Every year, the World Anti-Doping Agency (WADA) publishes the main statistics reported by the accredited laboratories, which provide very valuable information for assessing changes in the patterns of doping in sports over time. Using the information provided since 2003 as the basis for the analysis, the evolution of doping/anti-doping figures over the last decade can be examined in reasonable detail, at least in reference to samples analyzed and categories of substances more commonly found in athletes' samples. This brief analysis of the WADA statistical reports leads us to the following outcomes: the increase in anti-doping pressure from 2003 to 2015, as evidenced by increased numbers of samples analyzed and banned substances, has not directly produced a higher frequency of adverse/atypical findings. Although this could be interpreted as steady state in the capacity to detect doping through this whole period, it also resulted in a significant increase in the absolute number of samples catalogued as doping (from 2247 in 2003 to 5912 in 2015). Anabolic agents have been the most common doping substances detected in all statistics reports while the remaining groups of substances are much less frequently found in doping control samples. Given that one might have expected the enhancement of the anti-doping programme led by WADA over this last decade to have increased the percentage of adverse/atypical findings, the fact that it did not might indicate the need to take another step in sampling strategies, such as 'more intelligent testing' based on the differences in the prevalence of doping substances among sports. Copyright © 2017 John Wiley & Sons, Ltd. Copyright © 2017 John Wiley & Sons, Ltd.

Copper doped borate dosimeters revisited

International Nuclear Information System (INIS)

Alajerami, Y.S.M.; Hashim, S.; Ghoshal, S.K.; Bradley, D.A.; Mhareb, M.; Saleh, M.A.

2014-01-01

We render a panoramic overview on copper (Cu) doped borate dosimeters. Preparing a dosimeter by mixing specific materials with precise weights and methods is a never-ending quest. The recommended composition is highly decisive for accurate estimation of the absorbed dose, prediction of the biological outcome, determination of the treatment dose for radiation therapy and facilitation of personal monitoring. Based on these principles, the proposed dosimeter must cover a series of dosimetric properties to realize the exact results and assessment. The doped borate dosimeters indeed demonstrate attractive thermoluminescence (TL) features. Several dedicated efforts are attempted to improve the luminescence properties by doping various transition metals or rare-earth elements. The Cu ion being one of the preferred activators shows excellent TL properties as revealed via detail comparison with other dosimeters. Two oxide states of Cu (Cu + and Cu ++ ) with reasonable atomic number allow easy interaction with boron network. Interestingly, the intrinsic luminescent centers of borate lattice are in cross linked with that of Cu + ions. Thus, the activation of borate dosimeter with Cu ions for the enhancement of the TL sensitivity is recognized. These dosimeters reveal similar glow curves as the standard TLD-100 (LiF:Mg,Ti) one irrespective of the use of modifiers and synthesis techniques. They display high sensitivity, low fading, dose response linearity over wide range and practical minimum detectable dose. Furthermore, the effective atomic number being the most beneficial aspect (equivalent to that of human tissue) of borate dosimeters do not show any change due to Cu ion activations. The past development, major challenges, excitement, applications, recent progress and the future promises of Cu doped borate TL dosimeters are highlighted. - Highlights: • The manuscript gives a panoramic overview on copper doped borate dosimeters. • Cu ions activated technique in borate

Preparation and Characterization of Mn/N Co-Doped TiO2 Loaded on Wood-Based Activated Carbon Fiber and Its Visible Light Photodegradation

Directory of Open Access Journals (Sweden)

Xiaojun Ma

2015-09-01

Full Text Available Using MnSO4·H2O as manganese source and urea as nitrogen source, Mn/N co-doped TiO2 loaded on wood-based activated carbon fiber (Mn/Ti-N-WACF was prepared by sol–gel method. Mn/Ti-N-WACF with different Mn doping contents was characterized by scanning electron microscopy, X-ray diffraction (XRD and X-ray photoelectron spectroscopies (XPS, and ultraviolet-visible spectrophotometer. Results showed that the loading rate of TiO2 in Mn/Ti-N-WACF was improved by Mn/N co-doping. After calcination at 450 °C, the degree of crystallinity of TiO2 was reduced due to Mn/N co-doption in the resulting Mn/Ti-N-WACF samples, but the TiO2 crystal phase was not changed. XPS spectra revealed that some Ti4+ ions from the TiO2 lattice of Mn/Ti-N-WACF system were substituted by doped Mn. Moreover, new bonds formed within N–Ti–N and Ti–N–O because of the doped N that substituted some oxygen atoms in the TiO2 lattice. Notably, the degradation rate of methylene blue for Mn/Ti-N-WACF was improved because of the co-doped Mn/N under visible-light irradiation.

Anomalous electron doping independent two-dimensional superconductivity

Science.gov (United States)

Zhou, Wei; Xing, Xiangzhuo; Zhao, Haijun; Feng, Jiajia; Pan, Yongqiang; Zhou, Nan; Zhang, Yufeng; Qian, Bin; Shi, Zhixiang

2017-07-01

Transition metal (Co and Ni) co-doping effects are investigated on an underdoped Ca0.94La0.06Fe2As2 compound. It is discovered that electron doping from substituting Fe with transition metal (TM = Co, Ni) can trigger high-{T}{{c}} superconductivity around 35 K, which emerges abruptly before the total suppression of the innate spin-density-wave/anti-ferromagnetism (SDW/AFM) state. Remarkably, the critical temperature for the high-{T}{{c}} superconductivity remains constant against a wide range of TM doping levels. And the net electron doping density dependence of the superconducting {T}{{c}} based on the rigid band model can be nicely scaled into a single curve for Co and Ni substitutions, in stark contrast to the case of Ba(Fe1-x TM x )2As2. This carrier density independent superconductivity and the unusual scaling behavior are presumably resulted from the interface superconductivity based on the similarity with the interface superconductivity in a La2-x Sr x CuO4-La2CuO4 bilayer. Evidence of the two-dimensional character of the superfluid by angle-resolved magneto-resistance measurements can further strengthen the interface nature of the high-{T}{{c}} superconductivity.

Theoretical study of bismuth-doped cadmium telluride

Science.gov (United States)

Menendez-Proupin, E.; Rios-Gonzalez, J. A.; Pena, J. L.

Cadmium telluride heavily doped with bismuth has been proposed as an absorber with an intermediate band for solar cells. Increase in the photocurrent has been shown recently, although the overall cell efficiency has not improved. In this work, we study the electronic structure and the formation energies of the defects associated to bismuth impurities. We have performed electronic structure calculations within generalized density functional theory, using the exchange-correlation functional HSE(w) , where the range-separation parameter w has been tuned to reproduce the CdTe bandgap. Improving upon previous reports, we have included the spin-orbit interaction, which modifies the structure of the valence band and the energy levels of bismuth. We have found that interstitial Bi (Bii) tends to occupy Cd vacancies, cadmium substitution (BiCd) creates single donor level, while tellurium substitution (BiTe) is a shallow single acceptor. We investigate the interaction between these point defects and how can they be combined to create a partially filled intermediate band. Supported by FONDECYT Grant 1130437, CONACYT-SENER SUSTENTABILIDAD ENERGETICA/project CeMIE-Sol PY-207450/25 and PY-207450/26. JARG acknowledges CONACYT fellowship for research visit. Powered@NLHPC (ECM-02).

Ab initio study of thermoelectric properties of doped SnO_2 superlattices

International Nuclear Information System (INIS)

Borges, P.D.; Silva, D.E.S.; Castro, N.S.; Ferreira, C.R.; Pinto, F.G.; Tronto, J.; Scolfaro, L.

2015-01-01

Transparent conductive oxides, such as tin dioxide (SnO_2), have recently shown to be promising materials for thermoelectric applications. In this work we studied the thermoelectric properties of Fe-, Sb- and Zn-uniformly doping and co-doping SnO_2, as well as of Sb and Zn planar (or delta)-doped layers in SnO_2 forming oxide superlattices (SLs). Based on the semiclassical Boltzmann transport equations (BTE) in conjunction with ab initio electronic structure calculations, the Seebeck coefficient (S) and figure of merit (ZT) are obtained for these systems, and are compared with available experimental data. The delta doping approach introduces a remarkable modification in the electronic structure of tin dioxide, when compared with the uniform doping, and colossal values for ZT are predicted for the delta-doped oxide SLs. This result is a consequence of the two-dimensional electronic confinement and the strong anisotropy introduced by the doped planes. In comparison with the uniformly doped systems, our predictions reveal a promising use of delta-doped SnO_2 SLs for enhanced S and ZT, which emerge as potential candidates for thermoelectric applications. - Graphical abstract: Band structure and Figure of merit for SnO2:Sb superlattice along Z direction, P. D. Borges, D. E. S. Silva, N. S. Castro, C. R. Ferreira, F. G. Pinto, J. Tronto and L. Scolfaro, Ab initio study of thermoelectric properties of doped SnO2 superlattices. - Highlights: • Thermoelectric properties of SnO_2-based alloys and superlattices. • High figure of merit is predicted for planar-doped SnO_2 superlattices. • Nanotechnology has an important role for the development of thermoelectric devices.

Photovoltaic X-ray detectors based on epitaxial GaAs structures

Energy Technology Data Exchange (ETDEWEB)

Achmadullin, R.A. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Artemov, V.V. [Shubnikov Institute of Crystallography, Russian Academy of Sciences, 59 Leninski pr., Moscow B-333, 117333 (Russian Federation); Dvoryankin, V.F. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation)]. E-mail: vfd217@ire216.msk.su; Dvoryankina, G.G. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Dikaev, Yu.M. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Ermakov, M.G. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Ermakova, O.N. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Chmil, V.B. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation); Holodenko, A.G. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation); Kudryashov, A.A.; Krikunov, A.I.; Petrov, A.G.; Telegin, A.A. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Vorobiev, A.P. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation)

2005-12-01

A new type of the photovoltaic X-ray detector based on epitaxial p{sup +}-n-n'-n{sup +} GaAs structures which provides a high efficiency of charge collection in the non-bias operation mode at room temperature is proposed. The GaAs epitaxial structures were grown by vapor-phase epitaxy on heavily doped n{sup +}-GaAs(1 0 0) substrates. The absorption efficiency of GaAs X-ray detector is discussed. I-V and C-V characteristics of the photovoltaic X-ray detectors are analyzed. The built-in electric field profiles in the depletion region of epitaxial structures are measured by the EBIC method. Charge collection efficiency to {alpha}-particles and {gamma}-radiation are measured. The application of X-ray detectors is discussed.

Possible observation of the Berezinskii-Kosterlitz-Thouless transition in boron-doped diamond films

Science.gov (United States)

Coleman, Christopher; Bhattacharyya, Somnath

2017-11-01

The occurrence of the Berezinskii-Kosterlitz-Thouless (BKT) transition is investigated in heavily boron-doped nanocrystalline diamond films through a combination of current-voltage and resistance measurements. We observe transport features suggesting a robust BKT transition along with transport features related to vortex pinning in nanocrystalline diamond films with smaller grain size. The vortex core energy determined through analysis of the resistance temperature curves was found to be anti-correlated to the BKT transition temperatures. It is also observed that the higher BKT temperature is related to an increased vortex-antivortex binding energy derived from the activated transport regions. Further, the magnetic field induced superconductor insulator transition shows the possibility of the charge glass state. The consequences of granularity such as localization and vortex pinning can lead to tuneable BKT temperatures and strongly affects the field induced insulating state.

Implantation doping of GaN

International Nuclear Information System (INIS)

Zolper, J.C.

1996-01-01

Ion implantation has played an enabling role in the realization of many high performance photonic and electronic devices in mature semiconductor materials systems such as Si and GaAs. This can also be expected to be the case in III-Nitride based devices as the material quality continues to improve. This paper reviews the progress in ion implantation processing of the III-Nitride materials, namely, GaN, AlN, InN and their alloys. Details are presented of the successful demonstrations of implant isolation as well as n- and p-type implantation doping of GaN. Implant doping has required activation annealing at temperatures in excess of 1,000 C. The nature of the implantation induced damage and its response to annealing is addressed using Rutherford Backscattering. Finally, results are given for the first demonstration of a GaN device fabricated using ion implantation doping, a GaN junction field effect transistor (JFET)

NuSTAR observations of heavily obscured quasars at z ~ 0.5

DEFF Research Database (Denmark)

Lansbury, G. B.; Alexander, D. M.; Del Moro, A.

2014-01-01

We present NuSTAR hard X-ray observations of three Type 2 quasars at z ≈ 0.4-0.5, optically selected from the Sloan Digital Sky Survey. Although the quasars show evidence for being heavily obscured, Compton-thick systems on the basis of the 2-10 keV to [O III] luminosity ratio and multiwavelength...

Dielectric loss property of strong acids doped polyaniline (PANi)

Science.gov (United States)

Amalia, Rianti; Hafizah, Mas Ayu Elita; Andreas, Manaf, Azwar

2018-04-01

In this study, strong acid doped polyaniline (PANi) has been successfully fabricated through the chemical oxidative polymerization process with various polymerization times. Nonconducting PANi resulting from the polymerization process at various polymerization times were then doped by a strong acid HClO4 to generate dielectric properties. Ammonium Persulfate (APS) as an initiator was used during Polymerization process to develop dark green precipitates which then called Emeraldine Base Polyaniline (PANi-EB). The PANi-EB was successively doped by strong acid HClO4 with dopant and PANi ratio 10:1 to enhance the electrical conductivity. The conductivity of doped PANi was evaluated by Four Point Probe. Results of evaluation showed that the conductivity values of HClO4 doped PANi were in the range 337-363 mS/cm. The dielectric properties of doped PANi were evaluated by Vector Network Analyzer (VNA) which suggested that an increase in the permittivity value in the conducting PANi. It is concluded that PANi could be a potential candidate for electromagnetic waves absorbing materials.

Highly selective manganese-doped zinc sulfide quantum dots based label free phosphorescent sensor for phosphopeptides in presence of zirconium (IV).

Science.gov (United States)

Gong, Yan; Fan, Zhefeng

2015-04-15

We report a room-temperature phosphorescence (RTP) sensor for phosphopeptides based on zirconium (IV)-modulated mercaptopropionic acid (MPA)-capped Mn-doped ZnS quantum dots (QDs). This sensor incorporates the advantages of the well-known Zr(4+)-phosphopeptide affinity pair and the RTP properties of doped QDs. The RTP of Mn-doped ZnS QDs capped with MPA can be effectively quenched by Zr(4+). The high affinity of phosphopeptides to Zr(4+) enables the dissociation of the ion from the surface of MPA-capped ZnS QDs, thereby forming a stable complex with phosphopeptides in the solution, and recovering the RTP of the QDs. The Zr(4+)-induced RTP quenching and subsequent phosphopeptide-induced RTP recovery for MPA-capped ZnS QDs provide a solid basis for the present RTP sensor based on QDs for the detection of phosphopeptides. The detection limit for phosphopeptides is 0.9ngmL(-1), the relative standard deviations is 2.5%, and the recovery of urine and serum samples with phosphopeptides addition rangs from 96% to 105% at optimal conditions. The proposed method was successfully applied to biological fluids and obtained satisfactory results. Copyright © 2014 Elsevier B.V. All rights reserved.

Synthesis, characterization and electrochemical behavior of Sb-doped ZnO microsphere film

Energy Technology Data Exchange (ETDEWEB)

Li, Qian [Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou, 310027 (China); Cheng, Kui, E-mail: chengkui@zju.edu.cn [Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou, 310027 (China); Weng, Wenjian, E-mail: wengwj@zju.edu.cn [Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou, 310027 (China); The Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050 (China); Du, Piyi; Han, Gaorong [Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou, 310027 (China)

2013-10-01

Sb-doped ZnO microsphere film was fabricated by a carboxylate ion assisted hydrothermal route coupled with a post-calcination process. The structure, chemical composition and optical band gap of the Sb-doped ZnO microsphere film were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, inductively couple plasma optical emission spectroscopy and UV–visible spectrophotometry, and compared with the un-doped ZnO microsphere film. The results suggest that the formation of zinc–antimony tartrate complex species during hydrothermal growth is the key to realize Sb-doped ZnO microstructures, and the present hydrothermal method with post-calcination is an effective way to dope Sb into ZnO. Furthermore, the Sb-doped ZnO microsphere film based electrochemical biosensor exhibits a good sensing performance for the detection of hydrogen peroxide, with a sensitivity of 271 μA mM{sup −1} cm{sup −2} which is more than three times higher than that of the un-doped ZnO biosensor. - Highlights: • Sb-doped ZnO microsphere (SZM) films were grown by hydrothermal deposition. • Carboxylate ions were used to form complex during hydrothermal growth. • The formation of Zn–Sb tartrate complex is the key to realize SZM. • The biosensors based on SZM film are feasible and sensitive to detect H{sub 2}O{sub 2}. • The Sb doping could improve the electrochemical property of ZnO.

Photothermally Driven Refreshable Microactuators Based on Graphene Oxide Doped Paraffin.

Science.gov (United States)

Hou, Sichao; Wang, Miao; Guo, Shouwu; Su, Ming

2017-08-09

Actuators based on phase change materials (paraffin) can simultaneously produce large stroke length and large force due to thermal expansion, but the low thermal conductivity of paraffin requires high power input and long actuation time. The graphene oxide (GO) doped paraffin dynamic actuator addresses the key challenges in the design of thermal phase change actuators: Thermal conductivity and light absorbing are increased, and the response time is reduced compared to the standard phase change actuator designed with metal heating resistors. The thermal properties of GO-paraffin composites with varied loading amount are characterized to confirm the optimal loading amount of 1.0%. A multicell phase change actuator was integrated into a digital micromirror controlled optical system. A series of photothermally driven refreshable patterns were generated and confirmed with infrared imaging.

Doping droops.

Science.gov (United States)

Chaturvedi, Aditi; Chaturvedi, Harish; Kalra, Juhi; Kalra, Sudhanshu

2007-01-01

Drug abuse is a major concern in the athletic world. The misconception among athletes and their coaches is that when an athlete breaks a record it is due to some "magic ingredient" and not because of training, hard work, mental attitude and championship performance. The personal motivation to win in competitive sports has been intensified by national, political, professional and economic incentives. Under this increased pressure athletes have turned to finding this "magic ingredient". Athlete turns to mechanical (exercise, massage), nutritional (vitamins, minerals), pharmacological (medicines) or gene therapies to have an edge over other players. The World Anti-Doping Agency (WADA) has already asked scientists to help find ways to prevent gene therapy from becoming the newest form of doping. The safety of the life of athletes is compromised with all forms of doping techniques, be it a side effect of a drug or a new technique of gene doping.

Thermodynamic analysis of Mg-doped p-type GaN semiconductor

International Nuclear Information System (INIS)

Li Jingbo; Liang Jingkui; Rao Guanghui; Zhang Yi; Liu Guangyao; Chen Jingran; Liu Quanlin; Zhang Weijing

2006-01-01

A thermodynamic modeling of Mg-doped p-type GaN was carried out to describe the thermodynamic behaviors of native defects, dopants (Mg and H) and carriers in GaN. The formation energies of charged component compounds in a four-sublattice model were defined as functions of the Fermi-level based on the results of the first-principles calculations and adjusted to fit experimental data. The effect of the solubility of Mg on the low doping efficiency of Mg in GaN and the role of H in the Mg-doping MOCVD process were discussed. The modeling provides a thermodynamic approach to understand the doping process of GaN semiconductors

Phosphorescent inner filter effect-based sensing of xanthine oxidase and its inhibitors with Mn-doped ZnS quantum dots.

Science.gov (United States)

Tang, Dandan; Zhang, Jinyi; Zhou, Rongxin; Xie, Ya-Ni; Hou, Xiandeng; Xu, Kailai; Wu, Peng

2018-05-10

Overexpression and crystallization of uric acid have been recognized as the course of hyperuricemia and gout, which is produced via xanthine oxidase (XOD)-catalyzed oxidation of xanthine. Therefore, the medicinal therapy of hyperuricemia and gout is majorly based on the inhibition of the XOD enzymatic pathway. The spectroscopic nature of xanthine and uric acid, namely both absorption (near the ultraviolet region) and emission (non-fluorescent) characteristics, hinders optical assay development for XOD analysis. Therefore, the state-of-the-art analysis of XOD and the screening of XOD inhibitors are majorly based on chromatography. Here, we found the near ultraviolet absorption of uric acid overlapped well with the absorption of a large bandgap semiconductor quantum dots, ZnS. On the other hand, the intrinsic weak fluorescence of ZnS QDs can be substantially improved via transition metal ion doping. Therefore, herein, we developed an inner filter effect-based assay for XOD analysis and inhibitor screening with Mn-doped ZnS QDs. The phosphorescence of Mn-doped ZnS QDs could be quenched by uric acid generated from xanthine catabolism by XOD, leading to the phosphorescence turn-off detection of XOD with a limit of detection (3σ) of 0.02 U L-1. Furthermore, the existence of XOD inhibitors could inhibit the XOD enzymatic reaction, resulting in weakened phosphorescence quenching. Therefore, the proposed assay could also be explored for the facile screening analysis of XOD inhibitors, which is important for the potential medicinal therapy of hyperuricemia and gout.

Doping control in sport

DEFF Research Database (Denmark)

Overbye, Marie Birch

2016-01-01

Doping testing is a key component enforced by anti-doping authorities to detect and deter doping in sport. Policy is developed to protect athletes' right to participate in doping-free sport; and testing is a key tool to secure this right. Accordingly, athletes' responses to anti-doping efforts...... are important. This article explores how the International Standards for Testing, which face different interpretations and challenges when policy is implemented, are perceived by elite athletes. Particularly, this article aims to investigate how elite athletes perceive the functioning of the testing system (i.......e., the efforts of stakeholders involved in testing) in their own sport both nationally and worldwide. Moreover, it seeks to identify whether specific factors such as previous experience of testing and perceived proximity of doping have an impact on athletes' perceptions of the testing system. The study comprises...

Radiophotoluminescence from silver-doped phosphate glass

International Nuclear Information System (INIS)

Miyamoto, Y.; Takei, Y.; Nanto, H.; Kurobori, T.; Konnai, A.; Yanagida, T.; Yoshikawa, A.; Shimotsuma, Y.; Sakakura, M.

2011-01-01

Glass dosimeter utilizing radiophotoluminescence (RPL) is one of accumulation type solid state dosimeters, which is based on luminescence phenomenon of silver (Ag + ions)-doped phosphate glass exposed to ionizing radiation. In this study, to clarify the emission mechanism of yellow and blue RPL peaks, optical properties of Ag + -doped glass, such as optical absorption spectrum, RPL excitation spectrum before and after X-ray irradiation as well as the lifetime of both RPL peaks are measured. From the results, we discuss the emission mechanism of yellow (peaked at 2.21 eV) and blue (peaked at 2.70 eV) RPL using a proposed energy band diagram for RPL emission and excitation in Ag + -doped phosphate glass. It is found that the radiative lifetime of blue RPL is three orders of magnitude faster than that of yellow RPL.

Unusual photoelectric behaviors of Mo-doped TiO2 multilayer thin films prepared by RF magnetron co-sputtering: effect of barrier tunneling on internal charge transfer

Science.gov (United States)

Yan, B. X.; Luo, S. Y.; Mao, X. G.; Shen, J.; Zhou, Q. F.

2013-01-01

Mo-doped TiO2 multilayer thin films were prepared by RF magnetron co-sputtering. Microstructures, crystallite parameters and the absorption band were investigated with atomic force microscopy, X-ray diffraction and ultraviolet-visible spectroscopy. Internal carrier transport characteristics and the photoelectric property of different layer-assemble modes were examined on an electrochemical workstation under visible light. The result indicates that the double-layer structure with an undoped surface layer demonstrated a red-shifted absorption edge and a much stronger photocurrent compared to the uniformly doped sample, signifying that the electric field implanted at the interface between particles in different layers accelerated internal charge transfer effectively. However, a heavily doped layer implanted at the bottom of the three-layer film merely brought about negative effects on the photoelectric property, mainly because of the Schottky junction existing above the substrate. Nevertheless, this obstacle was successfully eliminated by raising the Mo concentration to 1020 cm-3, where the thickness of the depletion layer fell into the order of angstroms and the tunneling coefficient manifested a dramatic increase. Under this circumstance, the Schottky junction disappeared and the strongest photocurrent was observed in the three-layer film.

Numerical analysis of band tails in nanowires and their effects on the performance of tunneling field-effect transistors

Science.gov (United States)

Tanaka, Takahisa; Uchida, Ken

2018-06-01

Band tails in heavily doped semiconductors are one of the important parameters that determine transfer characteristics of tunneling field-effect transistors. In this study, doping concentration and doing profile dependences of band tails in heavily doped Si nanowires were analyzed by a nonequilibrium Green function method. From the calculated band tails, transfer characteristics of nanowire tunnel field-effect transistors were numerically analyzed by Wentzel–Kramer–Brillouin approximation with exponential barriers. The calculated transfer characteristics demonstrate that the band tails induced by dopants degrade the subthreshold slopes of Si nanowires from 5 to 56 mV/dec in the worst case. On the other hand, surface doping leads to a high drain current while maintaining a small subthreshold slope.

AN AMELIORATED DETECTION STATISTICS FOR ADAPTIVE MASK MEDIAN FILTRATION OF HEAVILY NOISED DIGITAL IMAGES

Directory of Open Access Journals (Sweden)

Geeta Hanji

2016-11-01

Full Text Available Noise reduction is an important area of research in image processing applications. The performance of the digital image noise filtering method primarily depends upon the accuracy of noise detection scheme. This paper presents an effective detector based, adaptive mask, median filtration of heavily noised digital images affected with fixed value (or salt and pepper impulse noise. The proposed filter presents a novel approach; an ameliorated Rank Ordered Absolute Deviation (ROAD statistics to judge whether the input pixel is noised or noise free. If a pixel is detected as corrupted, it is subjected to adaptive mask median filtration; otherwise, it is kept unchanged. Extensive experimental results and comparative performance evaluations demonstrate that the proposed filter outperforms the existing decision type, median based filters with powerful noise detectors in terms of objective performance measures and visual retrieviation accuracy.

Doping Attitudes and Covariates of Potential Doping Behaviour in High-Level Team-Sport Athletes; Gender Specific Analysis

Science.gov (United States)

Sekulic, Damir; Tahiraj, Enver; Zvan, Milan; Zenic, Natasa; Uljevic, Ognjen; Lesnik, Blaz

2016-01-01

Team sports are rarely studied with regard to doping behaviour and doping-related factors regardless of their global popularity. This study aimed to investigate doping factors and covariates of potential doping behaviour in high-level team-sport athletes. The subjects were 457 high-performing, national- and international-level athletes (21.9 ± 3.4 years of age; 179 females) involved in volleyball (n = 77), soccer (n = 163), basketball (n = 114) and handball (n = 103). Previously validated self-administered questionnaires aimed at evidencing sport factors, doping-related factors, knowledge on sport nutrition and doping, and attitudes to performance enhancement were used. The results indicated a higher doping likelihood in male athletes, with a significant gender difference for basketball and handball. In males, a higher doping likelihood is found for athletes who had achieved better results at junior-age level, those who regularly consume dietary supplements, and who perceive their sport as being contaminated by doping. A higher sport achievement at senior-age level is protective against potential doping behaviour in males. In females, a higher likelihood of doping is evidenced in those athletes involved in binge drinking, while a lower tendency for doping is evidenced in female athletes who possess better knowledge on sport nutrition. Knowledge about doping is very low and thus education about doping is urgently needed. An improvement of knowledge on sport nutrition might be a potentially effective method for reducing the tendency for doping in females. Future studies should consider other approaches and theories, such as theory of planned behaviour and/or social-cognitive theory, in studying the problem of doping behaviour in team-sports. Key points The doping knowledge among Kosovar team-sport athletes is very low and systematic anti-doping education is urgently needed. The highest risk of doping behaviour in males is found for those athletes who had been

Relation between film thickness and surface doping of MoS2 based field effect transistors

Science.gov (United States)

Lockhart de la Rosa, César J.; Arutchelvan, Goutham; Leonhardt, Alessandra; Huyghebaert, Cedric; Radu, Iuliana; Heyns, Marc; De Gendt, Stefan

2018-05-01

Ultra-thin MoS2 film doping through surface functionalization with physically adsorbed species is of great interest due to its ability to dope the film without reduction in the carrier mobility. However, there is a need for understanding how the thickness of the MoS2 film is related to the induced surface doping for improved electrical performance. In this work, we report on the relation of MoS2 film thickness with the doping effect induced by the n-dopant adsorbate poly(vinyl-alcohol). Field effect transistors built using MoS2 films of different thicknesses were electrically characterized, and it was observed that the ION/OFF ratio after doping in thin films is more than four orders of magnitudes greater when compared with thick films. Additionally, a semi-classical model tuned with the experimental devices was used to understand the spatial distribution of charge in the channel and explain the observed behavior. From the simulation results, it was revealed that the two-dimensional carrier density induced by the adsorbate is distributed rather uniformly along the complete channel for thin films (<5.2 nm) contrary to what happens for thicker films.

Thermal conductivity and heat transport properties of nitrogen-doped graphene.

Science.gov (United States)

Goharshadi, Elaheh K; Mahdizadeh, Sayyed Jalil

2015-11-01

In the present study, the thermal conductivity (TC) and heat transport properties of nitrogen doped graphene (N-graphene) were investigated as a function of temperature (107-400K) and N-doped concentration (0.0-7.0%) using equilibrium molecular dynamics simulation based on Green-Kubo method. According to the results, a drastic decline in TC of graphene observed at very low N-doped concentration (0.5 and 1.0%). Substitution of just 1.0% of carbon atoms with nitrogens causes a 77.2, 65.4, 59.2, and 53.7% reduction in TC at 107, 200, 300, and 400K, respectively. The values of TC of N-graphene at different temperatures approach to each other as N-doped concentration increases. The results also indicate that TC of N-graphene is much less sensitive to temperature compared with pristine graphene and the sensitivity decreases as N-doped concentration increases. The phonon-phonon scattering relaxation times and the phonon mean free path of phonons were also calculated. The contribution of high frequency optical phonons for pristine graphene and N-graphene with 7.0% N-doped concentration is 0-2% and 4-8%, respectively. These findings imply that it is potentially feasible to control heat transfer on the nanoscale when designing N-graphene based thermal devices. Copyright © 2015 Elsevier Inc. All rights reserved.

Hole states in diamond p-delta-doped field effect transistors

International Nuclear Information System (INIS)

Martinez-Orozco, J C; Rodriguez-Vargas, I; Mora-Ramos, M E

2009-01-01

The p-delta-doping in diamond allows to create high density two-dimensional hole gases. This technique has already been applied in the design and fabrication of diamond-based field effect transistors. Consequently, the knowledge of the electronic structure is of significant importance to understand the transport properties of diamond p-delta-doped systems. In this work the hole subbands of diamond p-type delta-doped quantum wells are studied within the framework of a local-density Thomas-Fermi-based approach for the band bending profile. The calculation incorporates an independent three-hole-band scheme and considers the effects of the contact potential, the delta-channel to contact distance, and the ionized impurity density.

Hole states in diamond p-delta-doped field effect transistors

Energy Technology Data Exchange (ETDEWEB)

Martinez-Orozco, J C; Rodriguez-Vargas, I [Unidad Academica de Fisica, Universidad Autonoma de Zacatecas, Calzada Solidaridad Esquina con Paseo la Bufa S/N, CP 98060 Zacatecas, ZAC. (Mexico); Mora-Ramos, M E, E-mail: jcmover@correo.unam.m [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, Col. Chamilpa, CP 62209 Cuernavaca, MOR. (Mexico)

2009-05-01

The p-delta-doping in diamond allows to create high density two-dimensional hole gases. This technique has already been applied in the design and fabrication of diamond-based field effect transistors. Consequently, the knowledge of the electronic structure is of significant importance to understand the transport properties of diamond p-delta-doped systems. In this work the hole subbands of diamond p-type delta-doped quantum wells are studied within the framework of a local-density Thomas-Fermi-based approach for the band bending profile. The calculation incorporates an independent three-hole-band scheme and considers the effects of the contact potential, the delta-channel to contact distance, and the ionized impurity density.

Pr{sup 3+}-doped GeS{sub {ital x}}-based glasses for fiber amplifiers at 1.3 {mu}m

Energy Technology Data Exchange (ETDEWEB)

Simons, D.R.; Faber, A.J.; de Waal, H. [Glass Technology, Eindhoven University of Technology, P.O. Box 595, 5600 AN Eindhoven (Netherlands)

1995-03-01

The photoluminescence properties of Pr{sup 3+}-doped GeS{sub {ital x}}-based glasses are studied and compared with those of other sulfide and fluoride glasses. The possibility of highly pump-power-efficient fiber amplifiers based on these GeS{sub {ital x}}-containing glasses in the telecommunications window at 1.3 {mu}m is discussed.

A call for policy guidance on psychometric testing in doping control in sport.

Science.gov (United States)

Petróczi, Andrea; Backhouse, Susan H; Barkoukis, Vassilis; Brand, Ralf; Elbe, Anne-Marie; Lazuras, Lambros; Lucidi, Fabio

2015-11-01

One of the fundamental challenges in anti-doping is identifying athletes who use, or are at risk of using, prohibited performance enhancing substances. The growing trend to employ a forensic approach to doping control aims to integrate information from social sciences (e.g., psychology of doping) into organised intelligence to protect clean sport. Beyond the foreseeable consequences of a positive identification as a doping user, this task is further complicated by the discrepancy between what constitutes a doping offence in the World Anti-Doping Code and operationalized in doping research. Whilst psychology plays an important role in developing our understanding of doping behaviour in order to inform intervention and prevention, its contribution to the array of doping diagnostic tools is still in its infancy. In both research and forensic settings, we must acknowledge that (1) socially desirable responding confounds self-reported psychometric test results and (2) that the cognitive complexity surrounding test performance means that the response-time based measures and the lie detector tests for revealing concealed life-events (e.g., doping use) are prone to produce false or non-interpretable outcomes in field settings. Differences in social-cognitive characteristics of doping behaviour that are tested at group level (doping users vs. non-users) cannot be extrapolated to individuals; nor these psychometric measures used for individual diagnostics. In this paper, we present a position statement calling for policy guidance on appropriate use of psychometric assessments in the pursuit of clean sport. We argue that, to date, both self-reported and response-time based psychometric tests for doping have been designed, tested and validated to explore how athletes feel and think about doping in order to develop a better understanding of doping behaviour, not to establish evidence for doping. A false 'positive' psychological profile for doping affects not only the individual

Doping of organic semiconductors

Energy Technology Data Exchange (ETDEWEB)

Luessem, B.; Riede, M.; Leo, K. [Institut fuer Angewandte Photophysik, TU Dresden (Germany)

2013-01-15

The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Doping of organic semiconductors

International Nuclear Information System (INIS)

Luessem, B.; Riede, M.; Leo, K.

2013-01-01

The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Preparation of a Carbon Doped Tissue-Mimicking Material with High Dielectric Properties for Microwave Imaging Application

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Siang-Wen Lan

2016-07-01

Full Text Available In this paper, the oil-in-gelatin based tissue-mimicking materials (TMMs doped with carbon based materials including carbon nanotube, graphene ink or lignin were prepared. The volume percent for gelatin based mixtures and oil based mixtures were both around 50%, and the doping amounts were 2 wt %, 4 wt %, and 6 wt %. The effect of doping material and amount on the microwave dielectric properties including dielectric constant and conductivity were investigated over an ultra-wide frequency range from 2 GHz to 20 GHz. The coaxial open-ended reflection technology was used to evaluate the microwave dielectric properties. Six measured values in different locations of each sample were averaged and the standard deviations of all the measured dielectric properties, including dielectric constant and conductivity, were less than one, indicating a good uniformity of the prepared samples. Without doping, the dielectric constant was equal to 23 ± 2 approximately. Results showed with doping of carbon based materials that the dielectric constant and conductivity both increased about 5% to 20%, and the increment was dependent on the doping amount. By proper selection of doping amount of the carbon based materials, the prepared material could map the required dielectric properties of special tissues. The proposed materials were suitable for the phantom used in the microwave medical imaging system.

The Electronic and Optical Properties of Au Doped Single-Layer Phosphorene

Science.gov (United States)

Zhu, Ziqing; Chen, Changpeng; Liu, Jiayi; Han, Lu

2018-01-01

The electronic properties and optical properties of single and double Au-doped phosphorene have been comparatively investigated using the first-principles plane-wave pseudopotential method based on density functional theory. The decrease from direct band gap 0.78 eV to indirect band gap 0.22 and 0.11 eV are observed in the single and double Au-doped phosphorene, respectively. The red shifts of absorbing edge occur in both doped systems, which consequently enhance the absorbing of infrared light in phosphorene. Band gap engineering can, therefore, be used to directly tune the optical absorption of phosphorene system by substitutional Au doping.

DOPING CONTROL AND LIABILITY FOR THE USE OF DOPING IN SPORT

Directory of Open Access Journals (Sweden)

Lyudmila Aleksandrovna Kiryanova

2017-10-01

Full Text Available Purpose. The article is devoted to the use by athletes of different performance enhancing drugs and banned anabolic steroids to enhance athletic performance. Authors aim to justify the improvement of the Russian legislation and anti-doping education. Methodology. The study constitutes an analysis of the legal documents of international standards and Russian legislation, the formulation of the concept of “doping”, the definition of the role of WADA in the development of anti-doping information and education programs for young generation of athletes. The authors identified pedagogical and organizational issues of the fight against doping in sport. Results. The studies found that an important thing of educational work is the pedagogical aspect. The authors have developed anti-doping activities that are recommended for use in the system of youth sports and education in the universities of physical culture. Practical implications. The results of the study are recommended for use in educational techniques anti-doping character in the sphere of physical culture and sports.

First-principles study of doping effect on the phase transition of zinc oxide with transition metal doped

International Nuclear Information System (INIS)

Wu, Liang; Hou, Tingjun; Wang, Yi; Zhao, Yanfei; Guo, Zhenyu; Li, Youyong; Lee, Shuit-Tong

2012-01-01

Highlights: ► We study the doping effect on B4, B1 structures and phase transition of ZnO. ► We calculate the phase transition barrier and phase transition path of doped ZnO. ► The transition metal doping decreases the bulk modulus and phase transition pressure. ► The magnetic properties are influenced by the phase transition process. - Abstract: Zinc oxide (ZnO) is a promising material for its wide application in solid-state devices. With the pressure raised from an ambient condition, ZnO transforms from fourfold wurtzite (B4) to sixfold coordinated rocksalt (B1) structure. Doping is an efficient approach to improve the structures and properties of materials. Here we use density-functional theory (DFT) to study doped ZnO and find that the transition pressure from B4 phase to B1 phase of ZnO always decreases with different types of transition metal (V, Cr, Mn, Fe, Co, or Ni) doped, but the phase transition path is not affected by doping. This is consistent with the available experimental results for Mn-doped ZnO and Co-doped ZnO. Doping in ZnO causes the lattice distortion, which leads to the decrease of the bulk modulus and accelerates the phase transition. Mn-doped ZnO shows the strongest magnetic moment due to its half filled d orbital. For V-doped ZnO and Cr-doped ZnO, the magnetism is enhanced by phase transition from B4 to B1. But for Mn-doped ZnO, Fe-doped ZnO, Co-doped ZnO, and Ni-doped ZnO, B1 phase shows weaker magnetic moment than B4 phase. These results can be explained by the amount of charge transferred from the doped atom to O atom. Our results provide a theoretical basis for the doping approach to change the structures and properties of ZnO.

Performance Degradation Tests of Phosphoric Acid Doped Polybenzimidazole Membrane Based High Temperature Polymer Electrolyte Membrane Fuel Cells

DEFF Research Database (Denmark)

Zhou, Fan; Araya, Samuel Simon; Grigoras, Ionela

2015-01-01

Degradation tests of two phosphoric acid (PA) doped PBI membrane based HT-PEM fuel cells were reported in this paper to investigate the effects of start/stop and the presence of methanol in the fuel to the performance degradation of the HT-PEM fuel cell. Continuous tests with pure dry H2 and meth...

The feasibility of tunable p-type Mg doping in a GaN monolayer nanosheet

International Nuclear Information System (INIS)

Xia, Congxin; Peng, Yuting; Wei, Shuyi; Jia, Yu

2013-01-01

Based on density functional theory, the electronic structures, formation energy and transition energy level of a p-type Mg-doped GaN nanosheet are investigated. Numerical results show that the transition energy level decreases monotonously with increasing Mg doping concentration in Mg-doped GaN nanosheet systems, which is lower than that of the Mg-doped bulk GaN case. Moreover, the formation energy calculations indicate that Mg-doped GaN nanosheet structures can be realized under N-rich experimental growth conditions

Materials Integration and Doping of Carbon Nanotube-based Logic Circuits

Science.gov (United States)

Geier, Michael

symmetric threshold voltages. Additionally, a novel n-type doping procedure for SWCNT TFTs was also developed utilizing a solution-processed organometallic small molecule to demonstrate the first network top-gated n-type SWCNT TFTs. Lastly, new doping and encapsulation layers were incorporated to stabilize both p-type and n-type SWCNT TFT electronic properties, which enabled the fabrication of large-scale memory circuits. Employing these materials and processing advances has addressed many application specific barriers to commercialization. For instance, the first thin-film SWCNT complementary metal-oxide-semi-conductor (CMOS) logic devices are demonstrated with sub-nanowatt static power consumption and full rail-to-rail voltage transfer characteristics. With the introduction of a new n-type Rh-based molecular dopant, the first SWCNT TFTs are fabricated in top-gate geometries over large areas with high yield. Then by utilizing robust encapsulation methods, stable and uniform electronic performance of both p-type and n-type SWCNT TFTs has been achieved. Based on these complementary SWCNT TFTs, it is possible to simulate, design, and fabricate arrays of low-power static random access memory (SRAM) circuits, achieving large-scale integration for the first time based on solution-processed semiconductors. Together, this work provides a direct pathway for solution processable, large scale, power-efficient advanced integrated logic circuits and systems.

Adaptive Neuro-Fuzzy Based Gain Controller for Erbium-Doped Fiber Amplifiers

Directory of Open Access Journals (Sweden)

YUCEL, M.

2017-02-01

Full Text Available Erbium-doped fiber amplifiers (EDFA must have a flat gain profile which is a very important parameter such as wavelength division multiplexing (WDM and dense WDM (DWDM applications for long-haul optical communication systems and networks. For this reason, it is crucial to hold a stable signal power per optical channel. For the purpose of overcoming performance decline of optical networks and long-haul optical systems, the gain of the EDFA must be controlled for it to be fixed at a high speed. In this study, due to the signal power attenuation in long-haul fiber optic communication systems and non-equal signal amplification in each channel, an automatic gain controller (AGC is designed based on the adaptive neuro-fuzzy inference system (ANFIS for EDFAs. The intelligent gain controller is implemented and the performance of this new electronic control method is demonstrated. The proposed ANFIS-based AGC-EDFA uses the experimental dataset to produce the ANFIS-based sets and the rule base. Laser diode currents are predicted within the accuracy rating over 98 percent with the proposed ANFIS-based system. Upon comparing ANFIS-based AGC-EDFA and experimental results, they were found to be very close and compatible.

Homojunction p-n photodiodes based on As-doped single ZnO nanowire

International Nuclear Information System (INIS)

Cho, H. D.; Zakirov, A. S.; Yuldashev, Sh. U.; Kang, T. W.; Ahn, C. W.; Yeo, Y. K.

2013-01-01

Photovoltaic device was successfully grown solely based on the single ZnO p-n homojunction nanowire. The ZnO nanowire p-n diode consists of an as-grown n-type segment and an in-situ arsenic doped p-type segment. This p-n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased condition. Our results demonstrate that present ZnO p-n homojunction nanowire can be used as a self-powered ultraviolet photodetector as well as a photovoltaic cell, which can also be used as an ultralow electrical power source for nano-scale electronic, optoelectronic, and medical devices

Performance optimization of MOS-like carbon nanotube-FETs with realistic source/drain contacts based on electrostatic doping

Energy Technology Data Exchange (ETDEWEB)

Zhou Hailiang; Zhang Minxuan [School of Computer, National University of Defense Technology, Changsha 410073 (China); Hao Yue, E-mail: hlzhou@nudt.edu.cn [School of Microelectronics, Xidian University, Xi' an 710071 (China)

2010-12-15

Due to carrier band-to-band-tunneling (BTBT) through channel-source/drain contacts, conventional MOS-like Carbon Nanotube Field Effect Transistors (C-CNFETs) suffer from ambipolar conductance, which deteriorates the device performance greatly. In order to reduce such ambipolar behavior, a novel device structure based on electrostatic doping is proposed and all kinds of source/drain contacting conditions are considered in this paper. The non-equilibrium Green's function (NEGF) formalism based simulation results show that, with proper choice of tuning voltage, such electrostatic doping strategy can not only reduce the ambipolar conductance but also improve the sub-threshold performance, even with source/drain contacts being of Schottky type. And these are both quite desirable in circuit design to reduce the system power and improve the frequency as well. Further study reveals that the performance of the proposed design depends strongly on the choice of tuning voltage value, which should be paid much attention to obtain a proper trade-off between power and speed in application. (semiconductor devices)

High p-type doping, mobility, and photocarrier lifetime in arsenic-doped CdTe single crystals

Science.gov (United States)

Nagaoka, Akira; Kuciauskas, Darius; McCoy, Jedidiah; Scarpulla, Michael A.

2018-05-01

Group-V element doping is promising for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe for thin film solar cells, but there are roadblocks concerning point defects including the possibility of self-compensation by AX metastability. Herein, we report on doping, lifetime, and mobility of CdTe single crystals doped with As between 1016 and 1020 cm-3 grown from the Cd solvent by the travelling heater method. Evidence consistent with AX instability as a major contributor to compensation in samples doped below 1017 cm-3 is presented, while for higher-doped samples, precipitation of a second phase on planar structural defects is also observed and may explain spatial variation in properties such as lifetime. Rapid cooling after crystal growth increases doping efficiency and mobility for times up to 20-30 days at room temperature with the highest efficiencies observed close to 45% and a hole mobility of 70 cm2/Vs at room temperature. A doping limit in the low 1017/cm3 range is observed for samples quenched at 200-300 °C/h. Bulk minority carrier lifetimes exceeding 20 ns are observed for samples doped near 1016 cm-3 relaxed in the dark and for unintentionally doped samples, while a lifetime of nearly 5 ns is observed for 1018 cm-3 As doping. These results help us to establish limits on properties expected for group-V doped CdTe polycrystalline thin films for use in photovoltaics.

Ab initio study of thermoelectric properties of doped SnO{sub 2} superlattices

Energy Technology Data Exchange (ETDEWEB)

Borges, P.D., E-mail: pdborges@gmail.com [Instituto de Ciências Exatas e Tecnológicas, Universidade Federal de Viçosa, 38810-000 Rio Paranaíba, MG (Brazil); Silva, D.E.S.; Castro, N.S.; Ferreira, C.R.; Pinto, F.G.; Tronto, J. [Instituto de Ciências Exatas e Tecnológicas, Universidade Federal de Viçosa, 38810-000 Rio Paranaíba, MG (Brazil); Scolfaro, L. [Department of Physics, Texas State University, 78666 San Marcos, TX (United States)

2015-11-15

Transparent conductive oxides, such as tin dioxide (SnO{sub 2}), have recently shown to be promising materials for thermoelectric applications. In this work we studied the thermoelectric properties of Fe-, Sb- and Zn-uniformly doping and co-doping SnO{sub 2}, as well as of Sb and Zn planar (or delta)-doped layers in SnO{sub 2} forming oxide superlattices (SLs). Based on the semiclassical Boltzmann transport equations (BTE) in conjunction with ab initio electronic structure calculations, the Seebeck coefficient (S) and figure of merit (ZT) are obtained for these systems, and are compared with available experimental data. The delta doping approach introduces a remarkable modification in the electronic structure of tin dioxide, when compared with the uniform doping, and colossal values for ZT are predicted for the delta-doped oxide SLs. This result is a consequence of the two-dimensional electronic confinement and the strong anisotropy introduced by the doped planes. In comparison with the uniformly doped systems, our predictions reveal a promising use of delta-doped SnO{sub 2} SLs for enhanced S and ZT, which emerge as potential candidates for thermoelectric applications. - Graphical abstract: Band structure and Figure of merit for SnO2:Sb superlattice along Z direction, P. D. Borges, D. E. S. Silva, N. S. Castro, C. R. Ferreira, F. G. Pinto, J. Tronto and L. Scolfaro, Ab initio study of thermoelectric properties of doped SnO2 superlattices. - Highlights: • Thermoelectric properties of SnO{sub 2}-based alloys and superlattices. • High figure of merit is predicted for planar-doped SnO{sub 2} superlattices. • Nanotechnology has an important role for the development of thermoelectric devices.

VOx effectively doping CVD-graphene for transparent conductive films

Science.gov (United States)

Ji, Qinghua; Shi, Liangjing; Zhang, Qinghong; Wang, Weiqi; Zheng, Huifeng; Zhang, Yuzhi; Liu, Yangqiao; Sun, Jing

2016-11-01

Chemical vapor deposition(CVD)-synthesized graphene is potentially an alternative for tin-doped indium oxide (ITO) transparent conductive films (TCFs), however its sheet resistance is still too high to meet many demands. Vanadium oxide has been widely applied as smart window materials, however, no study has been reported to use it as dopant to improve the conductivity of graphene TCFs. In this study, we firstly reported that VOx doping can effectively lower the sheet resistance of CVD-graphene films while keeping its good optical properties, whose transmittance is as high as 86-90%. The optimized VOx-doped graphene exhibits a sheet resistance as low as 176 Ω/□, which decreases by 56% compared to the undoped graphene films. The doping process is convenient, stable, economical and easy to operate. What is more, VOx can effectively increase the work function(WF) of the film, making it more appropriate for use in solar cells. The evolution of the VOx species annealed at different temperatures below 400 °C has been detailed studied for the first time, based on which the doping mechanism is proposed. The prepared VOx doped graphene is expected to be a promising candidate for transparent conductive film purposes.

Electrically actuatable doped polymer flakes and electrically addressable optical devices using suspensions of doped polymer flakes in a fluid host

Science.gov (United States)

Trajkovska-Petkoska, Anka; Jacobs, Stephen D.; Marshall, Kenneth L.; Kosc, Tanya Z.

2010-05-11

Doped electrically actuatable (electrically addressable or switchable) polymer flakes have enhanced and controllable electric field induced motion by virtue of doping a polymer material that functions as the base flake matrix with either a distribution of insoluble dopant particles or a dopant material that is completely soluble in the base flake matrix. The base flake matrix may be a polymer liquid crystal material, and the dopants generally have higher dielectric permittivity and/or conductivity than the electrically actuatable polymer base flake matrix. The dopant distribution within the base flake matrix may be either homogeneous or non-homogeneous. In the latter case, the non-homogeneous distribution of dopant provides a dielectric permittivity and/or conductivity gradient within the body of the flakes. The dopant can also be a carbon-containing material (either soluble or insoluble in the base flake matrix) that absorbs light so as to reduce the unpolarized scattered light component reflected from the flakes, thereby enhancing the effective intensity of circularly polarized light reflected from the flakes when the flakes are oriented into a light reflecting state. Electro-optic devices contain these doped flakes suspended in a host fluid can be addressed with an applied electric field, thus controlling the orientation of the flakes between a bright reflecting state and a non-reflecting dark state.

Erythropoietin abuse and erythropoietin gene doping: detection strategies in the genomic era.

Science.gov (United States)

Diamanti-Kandarakis, Evanthia; Konstantinopoulos, Panagiotis A; Papailiou, Joanna; Kandarakis, Stylianos A; Andreopoulos, Anastasios; Sykiotis, Gerasimos P

2005-01-01

The administration of recombinant human erythropoietin (rhEPO) increases the maximum oxygen consumption capacity, and is therefore abused as a doping method in endurance sports. The detection of erythropoietin (EPO) abuse is based on direct pharmacological and indirect haematological approaches, both of which have several limitations. In addition, current detection methods cannot cope with the emerging doping strategies of EPO mimicry, analogues and gene doping, and thus novel detection strategies are urgently needed. Direct detection methods for EPO misuse can be either pharmacological approaches that identify exogenous substances based on their physicochemical properties, or molecular methods that recognise EPO transgenes or gene transfer vectors. Since direct detection with molecular methods requires invasive procedures, it is not appropriate for routine screening of large numbers of athletes. In contrast, novel indirect methods based on haematological and/or molecular profiling could be better suited as screening tools, and athletes who are suspect of doping would then be submitted to direct pharmacological and molecular tests. This article reviews the current state of the EPO doping field, discusses available detection methods and their shortcomings, outlines emerging pharmaceutical and genetic technologies in EPO misuse, and proposes potential directions for the development of novel detection strategies.

Doping Attitudes and Covariates of Potential Doping Behaviour in High-Level Team-Sport Athletes; Gender Specific Analysis

Directory of Open Access Journals (Sweden)

Damir Sekulic, Enver Tahiraj, Milan Zvan, Natasa Zenic, Ognjen Uljevic, Blaz Lesnik

2016-12-01

Full Text Available Team sports are rarely studied with regard to doping behaviour and doping-related factors regardless of their global popularity. This study aimed to investigate doping factors and covariates of potential doping behaviour in high-level team-sport athletes. The subjects were 457 high-performing, national- and international-level athletes (21.9 ± 3.4 years of age; 179 females involved in volleyball (n = 77, soccer (n = 163, basketball (n = 114 and handball (n = 103. Previously validated self-administered questionnaires aimed at evidencing sport factors, doping-related factors, knowledge on sport nutrition and doping, and attitudes to performance enhancement were used. The results indicated a higher doping likelihood in male athletes, with a significant gender difference for basketball and handball. In males, a higher doping likelihood is found for athletes who had achieved better results at junior-age level, those who regularly consume dietary supplements, and who perceive their sport as being contaminated by doping. A higher sport achievement at senior-age level is protective against potential doping behaviour in males. In females, a higher likelihood of doping is evidenced in those athletes involved in binge drinking, while a lower tendency for doping is evidenced in female athletes who possess better knowledge on sport nutrition. Knowledge about doping is very low and thus education about doping is urgently needed. An improvement of knowledge on sport nutrition might be a potentially effective method for reducing the tendency for doping in females. Future studies should consider other approaches and theories, such as theory of planned behaviour and/or social-cognitive theory, in studying the problem of doping behaviour in team-sports.

Chemical doping and improved flux pinning in Hg-based superconductors

International Nuclear Information System (INIS)

Kishio, K.; Shimoyama, J.; Yoshikawa, A.; Kitazawa, K.

1996-01-01

Chemical doping of a small amount (0.02∼0.3) of rhenium (Re) ion into HgBa 2 Ca n-1 Cu n O y (n=1∼4) has been studied. The flux pinning strength in these Hg-based superconductors is significantly enhanced compared to the undoped parent materials. Neutron diffraction analysis of representative samples (n=3) revealed that Re partially substitutes the Hg-site with octahedrally fully coordinated oxygen atoms, giving rise to the stabilization of Hg(Re)O layer and reduction of this blocking layer thickness. Associated with the expected hybridization of Re-5d and O-2p orbitals and possible metallization of the Hg(Re)O layer, the improved flux pinning behavior is considered to be caused by the decrease of the electromagnetic anisotropy and the enhanced interlayer superconducting coupling strength

Lignocellulose-derived porous phosphorus-doped carbon as advanced electrode for supercapacitors

Science.gov (United States)

Yi, Jianan; Qing, Yan; Wu, ChuTian; Zeng, Yinxiang; Wu, Yiqiang; Lu, Xihong; Tong, Yexiang

2017-05-01

Engineering porous heteroatom-doped carbon nanomaterials with remarkable capacitive performance is highly attractive. Herein, a simple and smart method has been developed to synthesize phosphorus (P) doped carbon with hierarchical porous structure derived from lignocellulose. Hierarchically porous P doped carbon is readily obtained by the pyrolysis of lignocellulose immersed in ZnCl2/NaH2PO4 aqueous solution, and exhibits excellent capacitive properties. The as-obtained P doped porous carbon delivers a significant capacitance of 133 F g-1 (146 mF cm-2) at a high current density of 10 A g-1 with outstanding rate performance. Furthermore, the P doped carbon electrode yields a long-term cycling durability with more than 97.9% capacitance retention after 10000 cycles as well. A symmetric supercapacitor with a maximum energy density of 4.7 Wh kg-1 is also demonstrated based on these P doped carbon electrodes.

Growth of nitrogen-doped graphene on copper: Multiscale simulations

Science.gov (United States)

Gaillard, P.; Schoenhalz, A. L.; Moskovkin, P.; Lucas, S.; Henrard, L.

2016-02-01

We used multiscale simulations to model the growth of nitrogen-doped graphene on a copper substrate by chemical vapour deposition (CVD). Our simulations are based on ab-initio calculations of energy barriers for surface diffusion, which are complemented by larger scale Kinetic Monte Carlo (KMC) simulations. Our results indicate that the shape of grown doped graphene flakes depends on the temperature and deposition flux they are submitted during the process, but we found no significant effect of nitrogen doping on this shape. However, we show that nitrogen atoms have a preference for pyridine-like sites compared to graphite-like sites, as observed experimentally.

Novel online security system based on rare-earth-doped glass microbeads

Science.gov (United States)

Officer, Simon; Prabhu, G. R.; Pollard, Pat; Hunter, Catherine; Ross, Gary A.

2004-06-01

A novel fluorescent security label has been produced that could replace numerous conventional fluorescent dyes in document security. This label utilizes rare earth ions doped in a borosilicate glass matrix to produce sharp spectral fluorescence peaks with characteristic long lifetimes due to the rare earth ions. These are subsequently detected by an online detection system based on fluorescence and the long lifetimes to avoid any interference from other fluorophores present in the background. Security is further enhanced by the interaction of the rare earth ions with each other and the effect of the host on the emission spectra and therefore the number of permutations that could be produced. This creates a very secure label with various applications for the security market.

First-principles study of Cu adsorption on vacancy-defected/Au-doped graphene

Science.gov (United States)

Liu, Yang; An, Libao; Gong, Liang

2018-04-01

To enhance the interaction between Cu and graphene in graphene reinforced Cu matrix composites, the first principles calculation was carried out to study the adsorption of Cu atoms on graphene. P-type doping and n-type doping were formed, respectively, on vacancy-defected and Au-doped graphene based on band structure analysis, and this was verified by subsequent investigation on density of states. A computation on charge transfer confirmed that p-type doping could promote the electron transport between Cu and graphene, while n-type doping would prevent it. In addition, adsorption energy and Mulliken population analysis revealed that both vacancy defects and Au doping could improve the stability of the Cu-graphene system. The research conducted in this paper provides useful guidance for the preparation of Cu/graphene composites.

[Doping and urologic tumors].

Science.gov (United States)

Pinto, F; Sacco, E; Volpe, A; Gardi, M; Totaro, A; Calarco, A; Racioppi, M; Gulino, G; D'Addessi, A; Bassi, P F

2010-01-01

Several substances such as growth hormone (GH), erythropoietin (Epo), and anabolic steroids (AS) are improperly utilized to increase the performance of athletes. Evaluating the potential cancer risk associated with doping agents is difficult since these drugs are often used at very high doses and in combination with other licit or illicit drugs. The GH, via its mediator, the insulin-like growth factor 1 (IGF-1), is involved in the development and progression of cancer. Animal studies suggested that high levels of GH/IGF-1 increase progression of androgen-independent prostate cancer. Clinical data regarding prostate cancer are mostly based on epidemiological studies or indirect data such as IGF-1 high levels in patients with prostate cancer. Even if experimental studies showed a correlation between Epo and cancer, no clinical data are currently available on cancer development related to Epo as a doping agent. Androgens are involved in prostate carcinogenesis modulating genes that regulate cell proliferation, apoptosis and angiogenesis. Most information on AS is anecdotal (case reports on prostate, kidney and testicular cancers). Prospective epidemiologic studies failed to support the hypothesis that circulating androgens are positively associated with prostate cancer risk. Currently, clinical and epidemiological studies supporting association between doping and urological neoplasias are not available. Nowadays, exposure to doping agents starts more prematurely with a consequent longer exposition period; drugs are often used at very high doses and in combination with other licit or illicit drugs. Due to all these elements it is impossible to predict all the side effects, including cancer; more detailed studies are therefore necessary.

On single doping and co-doping of spray pyrolysed ZnO films: Structural, electrical and optical characterisation

International Nuclear Information System (INIS)

Vimalkumar, T.V.; Poornima, N.; Jinesh, K.B.; Kartha, C. Sudha; Vijayakumar, K.P.

2011-01-01

In this paper we present studies on ZnO thin films (prepared using Chemical Spray pyrolysis (CSP) technique) doped in two different ways; in one set, 'single doping' using indium was done while in the second set, 'co-doping' using indium and fluorine was adopted. In the former case, effect of in-situ as well as ex-situ doping using In was analyzed. Structural (XRD studies), electrical (I-V measurements) and optical characterizations (through absorption, transmission and photoluminescence studies) of the films were done. XRD analysis showed that, for spray-deposited ZnO films, ex-situ doping using Indium resulted in preferred (0 0 2) plane orientation, while in-situ doping caused preferred orientation along (1 0 0), (0 0 2), (1 0 1) planes; however for higher percentage of in-situ doping, orientation of grains changed from (0 0 2) plane to (1 0 1) plane. The co-doped films had (0 0 2) and (1 0 1) planes. Lowest resistivity (2 x 10 -3 Ω cm) was achieved for the films, doped with 1% Indium through in-situ method. Photoluminescence (PL) emissions of ex-situ doped and co-doped samples had two peaks; one was the 'near band edge' emission (NBE) and the other was the 'blue-green' emission. But interestingly the PL emission of in-situ doped samples exhibited only the 'near band edge' emission. Optical band gap of the films increased with doping percentage, in all cases of doping.

Experimental study on the 4H-SiC-based VDMOSFETs with lightly doped P-well field-limiting rings termination

Science.gov (United States)

He, Yan Jing; Lv, Hong Liang; Tang, Xiao Yan; Song, Qing Wen; Zhang, Yi Meng; Han, Chao; Zhang, Yi Men; Zhang, Yu Ming

2017-03-01

A lightly doped P-well field-limiting rings (FLRs) termination on 4H-SiC vertical double-implanted metal-oxide-semiconductor field-effect transistors (VDMOSFETs) has been investigated. Based on the simulation, the proposed termination applied to 4H-SiC VDMOSFET could achieve an almost same breakdown voltage (BV) and have the advantage of lower ion-implantation damage comparing with P+ FLRs termination. Meanwhile, this kind of termination also reduces the difficulty and consumption of fabrication process. 4H-SiC VDMOSFETs with lightly doped P-well (FLRs) termination have been fabricated on 10 μm thick epi-layer with nitrogen doping concentration of 6.2 × 1015 cm-3. The maximum breakdown voltage of the 4H-SiC VDMOSFETs has achieved as high as 1610 V at a current of 15 μA, which is very close to the simulated result of 1643 V and about 90% of the plane parallel breakdown voltage of 1780 V. It is considered that P-well FLRs termination is an effective, robust and process-tolerant termination structure suitable for 4H-SiC VDMOSFET.

Destabilized LiBH4-NaAlH4 Mixtures Doped with Titanium Based Catalysts

DEFF Research Database (Denmark)

Shi, Qing; Yu, Xuebin; Feidenhans'l, Robert