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Sample records for heavily boron-doped silicon

  1. Superconductivity in heavily boron-doped silicon carbide

    Directory of Open Access Journals (Sweden)

    Markus Kriener, Takahiro Muranaka, Junya Kato, Zhi-An Ren, Jun Akimitsu and Yoshiteru Maeno

    2008-01-01

    Full Text Available The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped silicon carbide. The sample used for that study consisted of cubic and hexagonal SiC phase fractions and hence this led to the question which of them participated in the superconductivity. Here we studied a hexagonal SiC sample, free from cubic SiC phase by means of x-ray diffraction, resistivity, and ac susceptibility.

  2. Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

    International Nuclear Information System (INIS)

    Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang; Yang, Deren; Lu, Yunhao

    2014-01-01

    The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B 2 I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition

  3. Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn; Yang, Deren [State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Lu, Yunhao, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn [International Center for New-Structured Materials and Laboratory of New-Structured Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2014-01-20

    The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B{sub 2}I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition.

  4. Iron solubility in highly boron-doped silicon

    International Nuclear Information System (INIS)

    McHugo, S.A.; McDonald, R.J.; Smith, A.R.; Hurley, D.L.; Weber, E.R.

    1998-01-01

    We have directly measured the solubility of iron in high and low boron-doped silicon using instrumental neutron activation analysis. Iron solubilities were measured at 800, 900, 1000, and 1100thinsp degree C in silicon doped with either 1.5x10 19 or 6.5x10 14 thinspboronthinspatoms/cm 3 . We have measured a greater iron solubility in high boron-doped silicon as compared to low boron-doped silicon, however, the degree of enhancement is lower than anticipated at temperatures >800thinsp degree C. The decreased enhancement is explained by a shift in the iron donor energy level towards the valence band at elevated temperatures. Based on this data, we have calculated the position of the iron donor level in the silicon band gap at elevated temperatures. We incorporate the iron energy level shift in calculations of iron solubility in silicon over a wide range of temperatures and boron-doping levels, providing a means to accurately predict iron segregation between high and low boron-doped silicon. copyright 1998 American Institute of Physics

  5. Precision interplanar spacings measurements of boron doped silicon

    International Nuclear Information System (INIS)

    Soares, D.A.W.; Pimentel, C.A.F.

    1982-05-01

    A study of lattice parameters of boron doped silicon (10 14 -10 19 atom/cc) grown in and directions by Czochralski technique has been undertaken. Interplanar spacings (d) were measured by pseudo-Kossel technique to a precision up to 0,001%; different procedures to obtain d and the errors are discussed. It is concluded that the crystallographic planes contract preferentially and the usual study of parameter variation must be made as a function of d. The diffused B particularly contracts the [333] plane and in a more pronunciate way in high concentrations. An orientation dependence of the diffusion during growth was observed. (Author) [pt

  6. Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films

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    T. Yokoya, T. Nakamura, T. Matushita, T. Muro, H. Okazaki, M. Arita, K. Shimada, H. Namatame, M. Taniguchi, Y. Takano, M. Nagao, T. Takenouchi, H. Kawarada and T. Oguchi

    2006-01-01

    Full Text Available We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES of microwave plasma-assisted chemical vapor deposition diamond films with different B concentrations in order to study the origin of the metallic behavior of superconducting diamond. SXARPES results clearly show valence band dispersions with a bandwidth of ~23 eV and with a top of the valence band at gamma point in the Brillouin zone, which are consistent with the calculated valence band dispersions of pure diamond. Boron concentration-dependent band dispersions near the Fermi level (EF exhibit a systematic shift of EF, indicating depopulation of electrons due to hole doping. These SXARPES results indicate that diamond bands retain for heavy boron doping and holes in the diamond band are responsible for the metallic states leading to superconductivity at low temperature. A high-resolution photoemission spectroscopy spectrum near EF of a heavily boron-doped diamond superconductor is also presented.

  7. Toward deep blue nano hope diamonds: heavily boron-doped diamond nanoparticles.

    Science.gov (United States)

    Heyer, Steffen; Janssen, Wiebke; Turner, Stuart; Lu, Ying-Gang; Yeap, Weng Siang; Verbeeck, Jo; Haenen, Ken; Krueger, Anke

    2014-06-24

    The production of boron-doped diamond nanoparticles enables the application of this material for a broad range of fields, such as electrochemistry, thermal management, and fundamental superconductivity research. Here we present the production of highly boron-doped diamond nanoparticles using boron-doped CVD diamond films as a starting material. In a multistep milling process followed by purification and surface oxidation we obtained diamond nanoparticles of 10-60 nm with a boron content of approximately 2.3 × 10(21) cm(-3). Aberration-corrected HRTEM reveals the presence of defects within individual diamond grains, as well as a very thin nondiamond carbon layer at the particle surface. The boron K-edge electron energy-loss near-edge fine structure demonstrates that the B atoms are tetrahedrally embedded into the diamond lattice. The boron-doped diamond nanoparticles have been used to nucleate growth of a boron-doped diamond film by CVD that does not contain an insulating seeding layer.

  8. Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

    Energy Technology Data Exchange (ETDEWEB)

    Achatz, Philipp

    2009-05-15

    During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n{sub c} for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers ({approx} 500 cm{sup -1}) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g{sub c}. The granularity also influences significantly the superconducting properties by introducing the superconducting gap {delta} in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the

  9. Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

    International Nuclear Information System (INIS)

    Achatz, Philipp

    2009-01-01

    During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n c for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers (∼ 500 cm -1 ) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g c . The granularity also influences significantly the superconducting properties by introducing the superconducting gap Δ in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the first time in aluminum

  10. Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

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    Behzad, Somayeh, E-mail: somayeh.behzad@gmail.co [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Moradian, Rostam [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Nano Science and Technology Research Center, Razi University, Kermanshah (Iran, Islamic Republic of); Computational Physical Science Research Laboratory, Department of Nano Science, Institute for Studies in Theoretical Physics and Mathematics (IPM), P.O. Box 19395-5531, Tehran (Iran, Islamic Republic of); Chegel, Raad [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of)

    2010-12-01

    The effects of boron doping on the structural and electronic properties of (6,0)-(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

  11. Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

    International Nuclear Information System (INIS)

    Behzad, Somayeh; Moradian, Rostam; Chegel, Raad

    2010-01-01

    The effects of boron doping on the structural and electronic properties of (6,0)-(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

  12. Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

    Science.gov (United States)

    Behzad, Somayeh; Moradian, Rostam; Chegel, Raad

    2010-12-01

    The effects of boron doping on the structural and electronic properties of (6,0)@(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

  13. Activation and deactivation in heavily boron-doped silicon

    International Nuclear Information System (INIS)

    Yoo, Seung-Han; Ro, Jae-Sang

    2003-01-01

    A shallow p + /n junction was formed using a ultra-low-energy (ULE) implanter. Activation by rapid thermal annealing (RTA) exhibited both solid phase epitaxy, in which the sheet resistance dropped rapidly, and reverse annealing, in a manner similar to furnace annealing. The temperature ranges in which these phenomena were observed, however, were higher in the case of RTA processing than they were in the case of furnace annealing due to the low thermal budget associated with the former. Deactivation phenomena were investigated for the shallow source/drain junction based on measurements of the post-annealing time and temperature following the RTA treatments. We found that the deactivation kinetics was divided into two regions. In the first regions, the rate of deactivation increased exponentially with the annealing temperature up to 850 .deg. C. In the second regions, it was found to decrease linearly with the annealing temperature beyond 850 .deg. C. We believe that the first region is kinetically limited while the second is thermodynamically limited. We also observed 'transient enhanced deactivation' an anomalous increase in the sheet resistance during the early stage of annealing at temperatures higher than 800 .deg. C. The activation energy for transient enhanced deactivation was measured to be in the 1.75 ∼ 1.87 eV range while that for normal deactivation was found to be between 3.49 and 3.69 eV.

  14. Role of aluminum in silver paste contact to boron-doped silicon emitters

    Directory of Open Access Journals (Sweden)

    Wei Wu

    2017-01-01

    Full Text Available The addition of aluminum to silver metallization pastes has been found to lower the contact resistivity of a silver metallization on boron-doped silicon emitters for n-type Si solar cells. However, the addition of Al also induces more surface recombination and increases the Ag pattern′s line resistivity, both of which ultimately limit the cell efficiency. There is a need to develop a fundamental understanding of the role that Al plays in reducing the contact resistivity and to explore alternative additives. A fritless silver paste is used to allow direct analysis of the impact of Al on the Ag-Si interfacial microstructure and isolate the influence of Al on the electrical contact from the complicated Ag-Si interfacial glass layer. Electrical analysis shows that in a simplified system, Al decreases the contact resistivity by about three orders of magnitude. Detailed microstructural studies show that in the presence of Al, microscale metallic spikes of Al-Ag alloy and nanoscale metallic spikes of Ag-Si alloy penetrate the surface of the boron-doped Si emitters. These results demonstrate the role of Al in reducing the contact resistivity through the formation of micro- and nano-scale metallic spikes, allowing the direct contact to the emitters.

  15. Anodic oxidation of wastewater containing the Reactive Orange 16 Dye using heavily boron-doped diamond electrodes

    International Nuclear Information System (INIS)

    Migliorini, F.L.; Braga, N.A.; Alves, S.A.; Lanza, M.R.V.; Baldan, M.R.; Ferreira, N.G.

    2011-01-01

    Highlights: → Electrochemical advanced oxidation process was studied using BDD based anodes with different boron concentrations. → The difference between the non-active and active anodes for organics degradation. → The influence of morphologic and structural properties of BDD electrodes on the RO-16 dye degradation. - Abstract: Boron-doped diamond (BDD) films grown on the titanium substrate were used to study the electrochemical degradation of Reactive Orange (RO) 16 Dye. The films were produced by hot filament chemical vapor deposition (HFCVD) technique using two different boron concentrations. The growth parameters were controlled to obtain heavily doped diamond films. They were named as E1 and E2 electrodes, with acceptor concentrations of 4.0 and 8.0 x 10 21 atoms cm -3 , respectively. The boron levels were evaluated from Mott-Schottky plots also corroborated by Raman's spectra, which characterized the film quality as well as its physical property. Scanning Electron Microscopy showed well-defined microcrystalline grain morphologies with crystal orientation mixtures of (1 1 1) and (1 0 0). The electrode efficiencies were studied from the advanced oxidation process (AOP) to degrade electrochemically the Reactive Orange 16 azo-dye (RO16). The results were analyzed by UV/VIS spectroscopy, total organic carbon (TOC) and high-performance liquid chromatography (HPLC) techniques. From UV/VIS spectra the highest doped electrode (E2) showed the best efficiency for both, the aromaticity reduction and the azo group fracture. These tendencies were confirmed by the TOC and chromatographic measurements. Besides, the results showed a direct relationship among the BDD morphology, physical property, and its performance during the degradation process.

  16. Reduction in Recombination Current Density in Boron Doped Silicon Using Atomic Hydrogen

    Science.gov (United States)

    Young, Matthew Garett

    The solar industry has grown immensely in recent years and has reached a point where solar energy has now become inexpensive enough that it is starting to emerge as a mainstream electrical generation source. However, recent economic analysis has suggested that for solar to become a truly wide spread source of electricity, the costs still need to plummet by a factor of 8x. This demands new and innovative concepts to help lower such cost. In pursuit of this goal, this dissertation examines the use of atomic hydrogen to lessen the recombination current density in the boron doped region of n-type silicon solar cells. This required the development of a boron diffusion process that maintained the bulk lifetime of n-type silicon such that the recombination current density could be extracted by photoconductance spectroscopy. It is demonstrated that by hydrogenating boron diffusions, the majority carrier concentration can be controlled. By using symmetrically diffused test structures with quinhydrone-methanol surface passivation the recombination current density of a hydrogenated boron profile is shown to be less than that of a standard boron profile, by as much as 30%. This is then applied to a modified industrial silicon solar cell process to demonstrate an efficiency enhancement of 0.4%.

  17. Modeling the Microstructure Curvature of Boron-Doped Silicon in Bulk Micromachined Accelerometer

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    Xiaoping He

    2013-01-01

    Full Text Available Microstructure curvature, or buckling, is observed in the micromachining of silicon sensors because of the doping of impurities for realizing certain electrical and mechanical processes. This behavior can be a key source of error in inertial sensors. Therefore, identifying the factors that influence the buckling value is important in designing MEMS devices. In this study, the curvature in the proof mass of an accelerometer is modeled as a multilayered solid model. Modeling is performed according to the characteristics of the solid diffusion mechanism in the bulk-dissolved wafer process (BDWP based on the self-stopped etch technique. Moreover, the proposed multilayered solid model is established as an equivalent composite structure formed by a group of thin layers that are glued together. Each layer has a different Young’s modulus value and each undergoes different volume shrinkage strain owing to boron doping in silicon. Observations of five groups of proof mass blocks of accelerometers suggest that the theoretical model is effective in determining the buckling value of a fabricated structure.

  18. Wet chemical treatment of boron doped emitters on n-type (1 0 0) c-Si prior to amorphous silicon passivation

    Energy Technology Data Exchange (ETDEWEB)

    Meddeb, H., E-mail: hosny.meddeb@gmail.com [KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Research and Technology Center of Energy, Photovoltaic Department, Borj-Cedria Science and Technology Park, BP 95, 2050 (Tunisia); University of Carthage, Faculty of Sciences of Bizerta (Tunisia); Bearda, T.; Recaman Payo, M.; Abdelwahab, I. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Abdulraheem, Y. [Electrical Engineering Department, College of Engineering & Petroleum, Kuwait University, P.O. Box 5969, 13060 Safat (Kuwait); Ezzaouia, H. [Research and Technology Center of Energy, Photovoltaic Department, Borj-Cedria Science and Technology Park, BP 95, 2050 (Tunisia); Gordon, I.; Szlufcik, J. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Poortmans, J. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Department of Electrical Engineering (ESAT), K.U. Leuven, 3001 Leuven (Belgium); Faculty of Sciences, University of Hasselt, Martelarenlaan 42, 3500 Hasselt (Belgium)

    2015-02-15

    Highlights: • The influence of the cleaning process using different HF-based cleaning on the amorphous silicon passivation of homojunction boron doped emitters is analyzed. • The effect of boron doping level on surface characteristics after wet chemical cleaning: For heavily doped surfaces, the reduction in contact angle was less pronounced, which proves that such surfaces are more resistant to oxide formation and remain hydrophobic for a longer time. In the case of low HF concentration, XPS measurements show higher oxygen concentrations for samples with higher doping level, probably due to the incomplete removal of the native oxide. • Higher effective lifetime is achieved at lower doping for all considered different chemical pre-treatments. • A post-deposition annealing improves the passivation level yielding emitter saturation currents determined by Auger recombination in the order of 70 fA/cm{sup 2} and below. • The dominance of Auger recombination over other type of B-induced defects on lifetime quality in the case of our p+ emitter. - Abstract: The influence of the cleaning process on the amorphous silicon passivation of homojunction emitters is investigated. A significant variation in the passivation quality following different cleaning sequences is not observed, even though differences in cleaning performance are evident. These results point out the effectiveness of our cleaning treatment and provide a hydrogen termination for intrinsic amorphous silicon passivation. A post-deposition treatment improves the passivation level yielding emitter saturation currents determined by Auger recombination in the order of 70 fA/cm{sup 2} and below.

  19. Investigation of charges carrier density in phosphorus and boron doped SiNx:H layers for crystalline silicon solar cells

    International Nuclear Information System (INIS)

    Paviet-Salomon, B.; Gall, S.; Slaoui, A.

    2013-01-01

    Highlights: ► We investigate the properties of phosphorus and boron-doped silicon nitride films. ► Phosphorus-doped layers yield higher lifetimes than undoped ones. ► The fixed charges density decreases when increasing the films phosphorus content. ► Boron-doped films feature very low lifetimes. ► These doped layers are of particular interest for crystalline silicon solar cells. -- Abstract: Dielectric layers are of major importance in crystalline silicon solar cells processing, especially as anti-reflection coatings and for surface passivation purposes. In this paper we investigate the fixed charge densities (Q fix ) and the effective lifetimes (τ eff ) of phosphorus (P) and boron (B) doped silicon nitride layers deposited by plasma-enhanced chemical vapour deposition. P-doped layers exhibit a higher τ eff than standard undoped layers. In contrast, B-doped layers exhibit lower τ eff . A strong Q fix decrease is to be seen when increasing the P content within the film. Based on numerical simulations we also demonstrate that the passivation obtained with P- and B-doped layers are limited by the interface states rather than by the fixed charges

  20. Light-induced enhancement of the minority carrier lifetime in boron-doped Czochralski silicon passivated by doped silicon nitride

    International Nuclear Information System (INIS)

    Wang, Hongzhe; Chen, Chao; Pan, Miao; Sun, Yiling; Yang, Xi

    2015-01-01

    Graphical abstract: - Highlights: • The phosphorus-doped SiN x with negative fixed charge was deposited by PECVD. • The increase of lifetime was observed on P-doped SiN x passivated Si under illumination. • The enhancement of lifetime was caused by the increase of negative fixed charges. - Abstract: This study reports a doubling of the effective minority carrier lifetime under light soaking conditions, observed in a boron-doped p-type Czochralski grown silicon wafer passivated by a phosphorus-doped silicon nitride thin film. The analysis of capacitance–voltage curves revealed that the fixed charge in this phosphorus-doped silicon nitride film was negative, which was unlike the well-known positive fixed charges observed in traditional undoped silicon nitride. The analysis results revealed that the enhancement phenomenon of minority carrier lifetime was caused by the abrupt increase in the density of negative fixed charge (from 7.2 × 10 11 to 1.2 × 10 12 cm −2 ) after light soaking.

  1. Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD

    Energy Technology Data Exchange (ETDEWEB)

    Pawbake, Amit [School of Energy Studies, Savitribai Phule Pune University, Pune 411 007 (India); Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Mayabadi, Azam; Waykar, Ravindra; Kulkarni, Rupali; Jadhavar, Ashok [School of Energy Studies, Savitribai Phule Pune University, Pune 411 007 (India); Waman, Vaishali [Modern College of Arts, Science and Commerce, Shivajinagar, Pune 411 005 (India); Parmar, Jayesh [Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Bhattacharyya, Somnath [Department of Metallurgical and Materials Engineering, IIT Madras, Chennai 600 036 (India); Ma, Yuan‐Ron [Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan (China); Devan, Rupesh; Pathan, Habib [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Jadkar, Sandesh, E-mail: sandesh@physics.unipune.ac.in [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India)

    2016-04-15

    Highlights: • Boron doped nc-3C-SiC films prepared by HW-CVD using SiH{sub 4}/CH{sub 4}/B{sub 2}H{sub 6}. • 3C-Si-C films have preferred orientation in (1 1 1) direction. • Introduction of boron into SiC matrix retard the crystallanity in the film structure. • Film large number of SiC nanocrystallites embedded in the a-Si matrix. • Band gap values, E{sub Tauc} and E{sub 04} (E{sub 04} > E{sub Tauc}) decreases with increase in B{sub 2}H{sub 6} flow rate. - Abstract: Boron doped nanocrystalline cubic silicon carbide (3C-SiC) films have been prepared by HW-CVD using silane (SiH{sub 4})/methane (CH{sub 4})/diborane (B{sub 2}H{sub 6}) gas mixture. The influence of boron doping on structural, optical, morphological and electrical properties have been investigated. The formation of 3C-SiC films have been confirmed by low angle XRD, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), Fourier transform infra-red (FTIR) spectroscopy and high resolution-transmission electron microscopy (HR-TEM) analysis whereas effective boron doping in nc-3C-SiC have been confirmed by conductivity, charge carrier activation energy, and Hall measurements. Raman spectroscopy and HR-TEM analysis revealed that introduction of boron into the SiC matrix retards the crystallanity in the film structure. The field emission scanning electron microscopy (FE-SEM) and non contact atomic force microscopy (NC-AFM) results signify that 3C-SiC film contain well resolved, large number of silicon carbide (SiC) nanocrystallites embedded in the a-Si matrix having rms surface roughness ∼1.64 nm. Hydrogen content in doped films are found smaller than that of un-doped films. Optical band gap values, E{sub Tauc} and E{sub 04} decreases with increase in B{sub 2}H{sub 6} flow rate.

  2. Effects of substrate temperature on structural and electrical properties of SiO2-matrix boron-doped silicon nanocrystal thin films

    International Nuclear Information System (INIS)

    Huang, Junjun; Zeng, Yuheng; Tan, Ruiqin; Wang, Weiyan; Yang, Ye; Dai, Ning; Song, Weijie

    2013-01-01

    In this work, silicon-rich SiO 2 (SRSO) thin films were deposited at different substrate temperatures (T s ) and then annealed by rapid thermal annealing to form SiO 2 -matrix boron-doped silicon-nanocrystals (Si-NCs). The effects of T s on the micro-structure and electrical properties of the SiO 2 -matrix boron-doped Si-NC thin films were investigated using Raman spectroscopy and Hall measurements. Results showed that the crystalline fraction and dark conductivity of the SiO 2 -matrix boron-doped Si-NC thin films both increased significantly when the T s was increased from room temperature to 373 K. When the T s was further increased from 373 K to 676 K, the crystalline fraction of 1373 K-annealed thin films decreased from 52.2% to 38.1%, and the dark conductivity reduced from 8 × 10 −3 S/cm to 5.5 × 10 −5 S/cm. The changes in micro-structure and dark conductivity of the SiO 2 -matrix boron-doped Si-NC thin films were most possibly due to the different amount of Si-O 4 bond in the as-deposited SRSO thin films. Our work indicated that there was an optimal T s , which could significantly increase the crystallization and conductivity of Si-NC thin films. Also, it was illumined that the low-resistivity SiO 2 -matrix boron-doped Si-NC thin films can be achieved under the optimal substrate temperatures, T s .

  3. Boron-Doped Diamond (BDD) Coatings Protect Underlying Silicon in Aqueous Acidic Media–Application to the Hydrogen Evolution Reaction

    International Nuclear Information System (INIS)

    Halima, A.F.; Rana, U.A.; MacFarlane, D.R.

    2014-01-01

    Abstract: Silicon has potential application as a functional semiconductor electrode in proposed solar water splitting cells. It is abundant and has excellent photovoltaic attributes, however it is extremely susceptible to corrosion, even in the dark, resulting in the formation of an electrochemically passive oxide upon interaction with aqueous media. This work investigates the potential for conductive, inert and transparent boron doped diamond (BDD) coatings to protect p-type Silicon (p-Si). The stability and electrochemical performance of p-Si and p-Si|BDD were investigated using voltammetric techniques in 1 M H 2 SO 4 , before and after long-term exposure to the acidic medium (up to 280 hours) under no applied potential bias. Unprotected Si degraded very rapidly whilst BDD was shown to protect the underlying Si, as evident from I-V curves that indicated no increased resistance across the Si-diamond interface. Furthermore, BDD supported facile proton reduction at significantly lower onset potential for the hydrogen evolution reaction (up to -500 mV vs. SCE) compared with bare Si cathode (-850 mV vs. SCE). The activity of the BDD electrode/electrolyte interface was further improved by coating with platinum catalyst particles, to produce a p-Si|BDD|Pt strucure, which reduced the HER onset to nearly zero overpotential. Tafel analysis indicated that desirable electrochemical activity and stability were achieved for p-Si|BDD|Pt, making this a promising electrode for application in water splitting cells

  4. Effect of Thermal Annealing on Light-Induced Minority Carrier Lifetime Enhancement in Boron-Doped Czochralski Silicon

    International Nuclear Information System (INIS)

    Wang Hong-Zhe; Zheng Song-Sheng; Chen Chao

    2015-01-01

    The effect of thermal annealing on the light-induced effective minority carrier lifetime enhancement (LIE) phenomenon is investigated on the p-type Czochralski silicon (Cz-Si) wafer passivated by a phosphorus-doped silicon nitride (P-doped SiN_x) thin film. The experimental results show that low temperature annealing (below 300°C) can not only increase the effective minority carrier lifetime of P-doped SiN_x passivated boron-doped Cz-Si, but also improve the LIE phenomenon. The optimum annealing temperature is 180°C, and its corresponding effective minority carrier lifetime can be increased from initial 7.5 μs to maximum 57.7 μs by light soaking within 15 min after annealing. The analysis results of high-frequency dark capacitance-voltage characteristics reveal that the mechanism of the increase of effective minority carrier lifetime after low temperature annealing is due to the sharp enhancement of field effect passivation induced by the negative fixed charge density, while the mechanism of the LIE phenomenon after low temperature annealing is attributed to the enhancement of both field effect passivation and chemical passivation. (paper)

  5. Use of B{sub 2}O{sub 3} films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Kalkofen, Bodo, E-mail: bodo.kalkofen@ovgu.de; Amusan, Akinwumi A.; Bukhari, Muhammad S. K.; Burte, Edmund P. [Institute of Micro and Sensor Systems, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Garke, Bernd [Institute for Experimental Physics, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Lisker, Marco [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Gargouri, Hassan [SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin (Germany)

    2015-05-15

    Plasma-assisted atomic layer deposition (PALD) was carried for growing thin boron oxide films onto silicon aiming at the formation of dopant sources for shallow boron doping of silicon by rapid thermal annealing (RTA). A remote capacitively coupled plasma source powered by GaN microwave oscillators was used for generating oxygen plasma in the PALD process with tris(dimethylamido)borane as boron containing precursor. ALD type growth was obtained; growth per cycle was highest with 0.13 nm at room temperature and decreased with higher temperature. The as-deposited films were highly unstable in ambient air and could be protected by capping with in-situ PALD grown antimony oxide films. After 16 weeks of storage in air, degradation of the film stack was observed in an electron microscope. The instability of the boron oxide, caused by moisture uptake, suggests the application of this film for testing moisture barrier properties of capping materials particularly for those grown by ALD. Boron doping of silicon was demonstrated using the uncapped PALD B{sub 2}O{sub 3} films for RTA processes without exposing them to air. The boron concentration in the silicon could be varied depending on the source layer thickness for very thin films, which favors the application of ALD for semiconductor doping processes.

  6. Substrate temperature dependence of microcrystallinity in plasma-deposited, boron-doped hydrogenated silicon alloys

    International Nuclear Information System (INIS)

    Rajeswaran, G.; Kampas, F.J.; Vanier, P.E.; Sabatini, R.L.; Tafto, J.

    1983-01-01

    The glow-discharge decomposition of silane diluted in hydrogen using diborane as a dopant results in the deposition of p-type microcrystalline silicon films at relatively low temperatures. The conductivity of these films is critically dependent on the substrate temperature when the ratio of silane flow rate to total gas flow rate is 1%. Electron micrographs show that highly conducting films contain numerous clusters of 2.5-nm crystallites that are embedded in an amorphous medium

  7. Boron-doped nanodiamonds as possible agents for local hyperthermia

    Science.gov (United States)

    Vervald, A. M.; Burikov, S. A.; Vlasov, I. I.; Ekimov, E. A.; Shenderova, O. A.; Dolenko, T. A.

    2017-04-01

    In this work, the effective heating of surrounding water by heavily-boron-doped nanodiamonds (NDs) under laser irradiation of visible wavelength was found. Using Raman scattering spectroscopy of aqueous suspensions of boron-doped NDs, it was found that this abnormally high heating results in the weakening of hydrogen bonds much more so (2-5 times stronger) than for undoped NDs. The property of boron-doped NDs to heat a solvent under the influence of laser radiation (1-5 W cm-2) opens broad prospects for their use to create nanoagents for medical oncology and local hyperthermia.

  8. Improvement on p-type CVD diamond semiconducting properties by fabricating thin heavily-boron-doped multi-layer clusters isolated each other in unintentionally boron-doped diamond layer

    Science.gov (United States)

    Maida, Osamu; Tabuchi, Tomohiro; Ito, Toshimichi

    2017-12-01

    We have developed a new fabrication process to decrease the effective activation energy of B atoms doped in diamond without a significant decrease in the carrier mobility by fabricating heavily B-doped clusters with very low mobility which are embedded in lightly-B-doped diamond layers. The resistivities of the heavily B-doped and unintentionally B-doped diamond stacked layers had almost no temperature dependence, suggesting the presence of an impurity-band conduction in these diamond layers. On the other hand, the resistivities of the samples after the embedding growth process of the stacked layers that had been appropriately divided to innumerable small clusters by means of a suitable etching process increased with decreasing the temperature from 330 to 130 K. The effective activation energies and Hall mobilities at room temperature of both samples were estimated to be 0.21 eV, 106 cm2 V-1 s-1 for micron-sized clusters and 0.23 eV, 470 cm2 V-1 s-1 for nano-sized clusters, respectively, indicating that the diamond film structure fabricated in this work is effective for the improvement of the p-type performance for the B-doped CVD diamond.

  9. Study on excimer laser irradiation for controlled dehydrogenation and crystallization of boron doped hydrogenated amorphous/nanocrystalline silicon multilayers

    International Nuclear Information System (INIS)

    Gontad, F.; Conde, J.C.; Filonovich, S.; Cerqueira, M.F.; Alpuim, P.; Chiussi, S.

    2013-01-01

    We report on the excimer laser annealing (ELA) induced temperature gradients, allowing controlled crystallization and dehydrogenation of boron-doped a-Si:H/nc-Si:H multilayers. Depth of the dehydrogenation and crystallization process has been studied numerically and experimentally, showing that temperatures below the monohydride decomposition can be used and that significant changes of the doping profile can be avoided. Calculation of temperature profiles has been achieved through numerical modeling of the heat conduction differential equation. Increase in the amount of nano-crystals, but not in their size, has been demonstrated by Raman spectroscopy. Effective dehydrogenation and shape of the boron profile have been studied by time of flight secondary ion mass spectroscopy. The relatively low temperature threshold for dehydrogenation, below the monohydride decomposition temperature, has been attributed to both, the large hydrogen content of the original films and the partial crystallization during the ELA process. The results of this study show that UV-laser irradiation is an effective tool to improve crystallinity and dopant activation in p + -nc-Si:H films without damaging the substrate. - Highlights: • An efficient dehydrogenation is possible through excimer laser annealing. • 140 mJ/cm 2 is enough for dehydrogenation without significant changes in doping profile. • Fluences up to 300 mJ/cm 2 promote partial crystallization of the amorphous structures

  10. Study on excimer laser irradiation for controlled dehydrogenation and crystallization of boron doped hydrogenated amorphous/nanocrystalline silicon multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Gontad, F., E-mail: fran_gontad@yahoo.es [Applied Physics Department, University of Vigo, E.I. Industrial, Campus de As Lagoas, Marcosende, E-36310, Vigo (Spain); Conde, J.C. [Applied Physics Department, University of Vigo, E.I. Industrial, Campus de As Lagoas, Marcosende, E-36310, Vigo (Spain); Filonovich, S.; Cerqueira, M.F.; Alpuim, P. [Department of Physics, University of Minho, Campus de Azurém, 4800-058 Guimarães (Portugal); Chiussi, S. [Applied Physics Department, University of Vigo, E.I. Industrial, Campus de As Lagoas, Marcosende, E-36310, Vigo (Spain)

    2013-06-01

    We report on the excimer laser annealing (ELA) induced temperature gradients, allowing controlled crystallization and dehydrogenation of boron-doped a-Si:H/nc-Si:H multilayers. Depth of the dehydrogenation and crystallization process has been studied numerically and experimentally, showing that temperatures below the monohydride decomposition can be used and that significant changes of the doping profile can be avoided. Calculation of temperature profiles has been achieved through numerical modeling of the heat conduction differential equation. Increase in the amount of nano-crystals, but not in their size, has been demonstrated by Raman spectroscopy. Effective dehydrogenation and shape of the boron profile have been studied by time of flight secondary ion mass spectroscopy. The relatively low temperature threshold for dehydrogenation, below the monohydride decomposition temperature, has been attributed to both, the large hydrogen content of the original films and the partial crystallization during the ELA process. The results of this study show that UV-laser irradiation is an effective tool to improve crystallinity and dopant activation in p{sup +}-nc-Si:H films without damaging the substrate. - Highlights: • An efficient dehydrogenation is possible through excimer laser annealing. • 140 mJ/cm{sup 2} is enough for dehydrogenation without significant changes in doping profile. • Fluences up to 300 mJ/cm{sup 2} promote partial crystallization of the amorphous structures.

  11. Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation

    OpenAIRE

    Meddeb, H.; Bearda, Twan; Payo, M. Recaman; Abdelwahab, I.; Abdulraheem, Yaser; Ezzaouia, H.; Gordon, I.; Szlufcik, J.; POORTMANS, Jef

    2015-01-01

    The influence of the cleaning process on the amorphous silicon passivation of homojunction emitters is investigated. A significant variation in the passivation quality following different cleaning sequences is not observed, even though differences in cleaning performance are evident. These results point out the effectiveness of our cleaning treatment and provide a hydrogen termination for intrinsic amorphous silicon passivation. A post-deposition treatment improves the passivation level yield...

  12. Studies on the oxygen precipitation in highly boron doped silicon; Untersuchungen zur Sauerstoffausscheidung in hoch bordotiertem Silicium

    Energy Technology Data Exchange (ETDEWEB)

    Zschorsch, Markus

    2007-12-14

    The aim of this thesis was the getting of new knowledge on the elucidation of the oxygen precipitation in highly doped silicon. In the study of the early phases of the oxygen precipitation boron-oxygen complexes and their kinetics could be indirectly detected. These arise already during the cooling of the crystal and can be destroyed by subsequent temperature processes. The formation of the here as BO assumed species during the cooling after the silicon crystal fabrication could be numerically reproduced. Furthermore the study of early precipitation phases by means of neutron small angle scattering a maximum of the oxygen precipitation at {rho}=9 m{omega}cm. It could be shown that the decreasing of this at increasing boron concentration can be most probably reduced to boron precipitations. Furthermore it could be shown that after a tempering time of 24 hours at 700 C in silicon with {rho}=9 m{omega}cm platelet-shaped precipitates form. By the study of the precipitate growth could be shown that also in this phase the oxygen precipitation in silicon is strongest with a specific resistance of {rho}=9 m{omega}cm. By means of FTIR spectroscopy a new absorption band at a wave number of 1038 cm{sup -1} was found, which could be assigned to a boron species. By different experiments it is considered as probable that at this species it deals with BI respectively B{sub 2}I complexes.

  13. Hydrogen-boron complexes in heavily boron-doped silicon treated with high concentration of hydrogen atoms

    International Nuclear Information System (INIS)

    Fukata, N.; Fukuda, S.; Sato, S.; Ishioka, K.; Kitajima, M.; Hishita, S.; Murakami, K.

    2006-01-01

    The formation of hydrogen (H)-related complexes was investigated in boron (B)-doped Si treated with high concentration of H. The isotope shifts of H-related Raman peaks by replacement of H to deuterium and 1 B to 11 B clearly showed the formation of the B-H complexes in which H directly bonds to B in Si. The results of the resistivity measurements suggested that the B acceptors are passivated via the formation of the B-H complexes, as well as the well-known passivation center in B-doped Si, namely, H-B passivation center

  14. Boron-Proton Nuclear-Fusion Enhancement Induced in Boron-Doped Silicon Targets by Low-Contrast Pulsed Laser

    Directory of Open Access Journals (Sweden)

    A. Picciotto

    2014-08-01

    Full Text Available We show that a spatially well-defined layer of boron dopants in a hydrogen-enriched silicon target allows the production of a high yield of alpha particles of around 10^{9} per steradian using a nanosecond, low-contrast laser pulse with a nominal intensity of approximately 3×10^{16}  W cm^{−2}. This result can be ascribed to the nature of the long laser-pulse interaction with the target and with the expanding plasma, as well as to the optimal target geometry and composition. The possibility of an impact on future applications such as nuclear fusion without production of neutron-induced radioactivity and compact ion accelerators is anticipated.

  15. Hydrogen diffusion and microstructure in undoped and boron-dope hydrogenated amorphous silicon: An IR and SIMS study

    International Nuclear Information System (INIS)

    Mitra, S.

    1991-01-01

    Hydrogenated amorphous silicon (a-Si:H) prepared by rf sputtering of a polycrystalline Si target at various rf powers 50 ≤ P ≤ 550 W (0.27--2.97 W/cm 2 ), target to substrate distance 1 ≤ d ≤ 2 double-prime, and varying hydrogen partial pressures. Doping was accomplished by introducing diborane (B 2 H 6 ) in the plasma. Hydrogen diffusion was studied from the depth profiles obtained from the SIMS on multilayered a-Si:H/a-Si:(H,D)/a-Si:H samples. The properties of the samples were characterized by IR absorption, optical gap measurements and ESR. IR yielded quantitative and qualitative information total hydrogen content and the nature of the hydrogen bonding, respectively. Hence the hydrogen microstructure of the samples could be varied in a systematic manner and monitored from the hydrogen vibrational modes. The ESR gave information on the number of paramagnetic defects per unit volume in the samples. The IR absorption of both as-deposited and annealed samples were closely monitored and the results clearly demonstrate a strong correlation between hydrogen diffusion and its microstructure. It is shown that microvoids in a-Si:H play a critical role in the process of diffusion by inducing deep hydrogen trapping sites that render them immobile. Consequently, as the microvoid density increases beyond a critical density hydrogen diffusion is totally quenched. The diffusion results are discussed both in the context of multiple trapping transport of hydrogen in an exponential distribution of trapping sites and the floating bond model

  16. Growth of misfit dislocation-free p/p+ thick epitaxial silicon wafers on Ge-B-codoped substrates

    International Nuclear Information System (INIS)

    Jiang Huihua; Yang Deren; Ma Xiangyang; Tian Daxi; Li Liben; Que Duanlin

    2006-01-01

    The growth of p/p + silicon epitaxial silicon wafers (epi-wafers) without misfit dislocations has been successfully achieved by using heavily boron-doped Czochralski (CZ) silicon wafers codoped with desirable level of germanium as the substrates. The lattice compensation by codoping of germanium and boron into the silicon matrix to reduce the lattice mismatch between the substrate (heavily boron-doped) and epi-layer (lightly boron-doped) is the basic idea underlying in the present achievement. In principle, the codoping of germanium and boron in the CZ silicon can be tailored to achieve misfit dislocation-free epi-layer with required thickness. It is reasonably expected that the presented solution to elimination of misfit dislocations in the p/p + silicon wafers can be applied in the volume production

  17. a Study of Oxygen Precipitation in Heavily Doped Silicon.

    Science.gov (United States)

    Graupner, Robert Kurt

    Gettering of impurities with oxygen precipitates is widely used during the fabrication of semiconductors to improve the performance and yield of the devices. Since the effectiveness of the gettering process is largely dependent on the initial interstitial oxygen concentration, accurate measurements of this parameter are of considerable importance. Measurements of interstitial oxygen following thermal cycles are required for development of semiconductor fabrication processes and for research into the mechanisms of oxygen precipitate nucleation and growth. Efforts by industrial associations have led to the development of standard procedures for the measurement of interstitial oxygen in wafers. However practical oxygen measurements often do not satisfy the requirements of such standard procedures. An additional difficulty arises when the silicon wafer has a low resitivity (high dopant concentration). In such cases the infrared light used for the measurement is severely attenuated by the electrons of holes introduced by the dopant. Since such wafers are the substrates used for the production of widely used epitaxial wafers, this measurement problem is economically important. Alternative methods such as Secondary Ion Mass Spectroscopy or Gas Fusion Analysis have been developed to measure oxygen in these cases. However, neither of these methods is capable of distinguishing interstitial oxygen from precipitated oxygen as required for precipitation studies. In addition to the commercial interest in heavily doped silicon substrates, they are also of interest for research into the role of point defects in nucleation and precipitation processes. Despite considerable research effort, there is still disagreement concerning the type of point defect and its role in semiconductor processes. Studies of changes in the interstitial oxygen concentration of heavily doped and lightly doped silicon wafers could help clarify the role of point defects in oxygen nucleation and precipitation

  18. Growth and characterization of heavily doped silicon crystals

    Energy Technology Data Exchange (ETDEWEB)

    Scala, R.; Porrini, M. [MEMC Electronic Materials SpA, via Nazionale 59, 39012 Merano (Italy); Borionetti, G. [MEMC Electronic Materials SpA, viale Gherzi 31, Novara (Italy)

    2011-08-15

    Silicon crystals grown with the Czochralski method are still the most common material used for the production of electronic devices. In recent years, a growing need of large diameter crystals with increasingly higher doping levels is observed, especially to support the expanding market of discrete devices and its trend towards lower and lower resistivity levels for the silicon substrate. The growth of such heavily doped, large-diameter crystals poses several new challenges to the crystal grower, and the presence of a high dopant concentration in the crystal affects significantly its main properties, requiring also the development of dedicated characterization techniques. This paper illustrates the recent advances in the growth and characterization of silicon crystals heavily doped with antimony, arsenic, phosphorus and boron. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Fabrication and characterization of boron-doped nanocrystalline diamond-coated MEMS probes

    Science.gov (United States)

    Bogdanowicz, Robert; Sobaszek, Michał; Ficek, Mateusz; Kopiec, Daniel; Moczała, Magdalena; Orłowska, Karolina; Sawczak, Mirosław; Gotszalk, Teodor

    2016-04-01

    Fabrication processes of thin boron-doped nanocrystalline diamond (B-NCD) films on silicon-based micro- and nano-electromechanical structures have been investigated. B-NCD films were deposited using microwave plasma assisted chemical vapour deposition method. The variation in B-NCD morphology, structure and optical parameters was particularly investigated. The use of truncated cone-shaped substrate holder enabled to grow thin fully encapsulated nanocrystalline diamond film with a thickness of approx. 60 nm and RMS roughness of 17 nm. Raman spectra present the typical boron-doped nanocrystalline diamond line recorded at 1148 cm-1. Moreover, the change in mechanical parameters of silicon cantilevers over-coated with boron-doped diamond films was investigated with laser vibrometer. The increase of resonance to frequency of over-coated cantilever is attributed to the change in spring constant caused by B-NCD coating. Topography and electrical parameters of boron-doped diamond films were investigated by tapping mode AFM and electrical mode of AFM-Kelvin probe force microscopy (KPFM). The crystallite-grain size was recorded at 153 and 238 nm for boron-doped film and undoped, respectively. Based on the contact potential difference data from the KPFM measurements, the work function of diamond layers was estimated. For the undoped diamond films, average CPD of 650 mV and for boron-doped layer 155 mV were achieved. Based on CPD values, the values of work functions were calculated as 4.65 and 5.15 eV for doped and undoped diamond film, respectively. Boron doping increases the carrier density and the conductivity of the material and, consequently, the Fermi level.

  20. Tracking with heavily irradiated silicon detectors operated at cryogenic temperatures

    International Nuclear Information System (INIS)

    Casagrande, L.; Barnett, B.M.; Bartalina, P.

    1999-01-01

    In this work, the authors show that a heavily irradiated double-sided silicon microstrip detector recovers its performance when operated at cryogenic temperatures. A DELPHI microstrip detector, irradiated to a fluence of ∼4 x 10 14 p/cm 2 , no longer operational at room temperature, cannot be distinguished from a non-irradiated one when operated at T < 120 K. Besides confirming the previously observed Lazarus effect in single diodes, these results establish, for the first time, the possibility of using standard silicon detectors for tracking applications in extremely demanding radiation environments

  1. Photovoltaic investigation of minority carrier lifetime in the heavily-doped emitter layer of silicon junction solar cell

    Science.gov (United States)

    Ho, C.-T.

    1982-01-01

    The results of experiments on the recombination lifetime in a phosphorus diffused N(+) layer of a silicon solar cell are reported. The cells studied comprised three groups of Czochralski grown crystals: boron doped to one ohm-cm, boron doped to 6 ohm-cm, and aluminum doped to one ohm-cm, all with a shunt resistance exceeding 500 kilo-ohms. The characteristic bulk diffusion length of a cell sample was determined from the short circuit current response to light at a wavelength of one micron. The recombination rates were obtained by measurement of the open circuit voltage as a function of the photogeneration rate. The recombination rate was found to be dependent on the photoinjection level, and is positive-field controlled at low photoinjection, positive-field influence Auger recombination at a medium photoinjection level, and negative-field controlled Auger recombination at a high photoinjection level.

  2. On the origin of the changes in the opto-electrical properties of boron-doped zinc oxide films after plasma surface treatment for thin-film silicon solar cell applications

    Science.gov (United States)

    Le, Anh Huy Tuan; Kim, Youngkuk; Lee, Youn-Jung; Hussain, Shahzada Qamar; Nguyen, Cam Phu Thi; Lee, Jaehyung; Yi, Junsin

    2018-03-01

    The modification of the steep and sharp valleys on the surface of the boron-doped zinc oxide (BZO) front electrodes by plasma surface treatment is a critical process for avoiding a significant reduction in the electrical performance of thin-film silicon solar cells. In this work, we report the origin of the changes in the electrical and optical properties of the BZO films that occur after this process. On the basis of an analysis of the chemical states, we found an improvement of the carrier concentration along with the treatment time that was mainly due to an increase of the oxygen vacancy. This indicated a deficiency of the oxygen in the BZO films under argon-ion bombardment. The red-shift of the A1 longitudinal optical mode frequency in the Raman spectra that was attributed to the existence of vacancy point defects within the films also strengthened this argument. The significant reduction of the haze ratio as well as the appearance of interference peaks on the transmittance spectra as the treatment time was increased were mainly due to the smoothing of the film surface, which indicated a degradation of the light-scattering capability of the BZO films. We also observed a gain of the visible-region transmittance that was attributed to the decrease of the thickness of the BZO films after the plasma surface treatment, instead of the crystallinity improvement. On the basis of our findings, we have proposed a further design rule of the BZO front electrodes for thin-film silicon solar cell applications.

  3. Near-infrared free carrier absorption in heavily doped silicon

    International Nuclear Information System (INIS)

    Baker-Finch, Simeon C.; McIntosh, Keith R.; Yan, Di; Fong, Kean Chern; Kho, Teng C.

    2014-01-01

    Free carrier absorption in heavily doped silicon can have a significant impact on devices operating in the infrared. In the near infrared, the free carrier absorption process can compete with band to band absorption processes, thereby reducing the number of available photons to optoelectronic devices such as solar cells. In this work, we fabricate 18 heavily doped regions by phosphorus and boron diffusion into planar polished silicon wafers; the simple sample structure facilitates accurate and precise measurement of the free carrier absorptance. We measure and model reflectance and transmittance dispersion to arrive at a parameterisation for the free carrier absorption coefficient that applies in the wavelength range between 1000 and 1500 nm, and the range of dopant densities between ∼10 18 and 3 × 10 20  cm −3 . Our measurements indicate that previously published parameterisations underestimate the free carrier absorptance in phosphorus diffusions. On the other hand, published parameterisations are generally consistent with our measurements and model for boron diffusions. Our new model is the first to be assigned uncertainty and is well-suited to routine device analysis

  4. Front and back side SIMS analysis of boron-doped delta-layer in diamond

    Energy Technology Data Exchange (ETDEWEB)

    Pinault-Thaury, M.-A., E-mail: marie-amandine.pinault-thaury@uvsq.fr [Groupe d’Etude de la Matière Condensée, CNRS, University of Paris Saclay, University of Versailles St Quentin, 45 Avenue des Etats-Unis, 78035 Versailles Cedex (France); Jomard, F. [Groupe d’Etude de la Matière Condensée, CNRS, University of Paris Saclay, University of Versailles St Quentin, 45 Avenue des Etats-Unis, 78035 Versailles Cedex (France); Mer-Calfati, C.; Tranchant, N.; Pomorski, M.; Bergonzo, P.; Arnault, J.-C. [CEA, LIST, Diamond Sensors Laboratory, 91191 Gif-sur-Yvette (France)

    2017-07-15

    Highlights: • Front and back side SIMS analysis of delta-layer boron-doped is a first for diamond. • Combination of front and back side depth profiling improves delta-layer analyses. • Sharp interfaces are evidenced on both sides of the delta-layer boron-doped diamond. • The growth of delta-layer boron doped diamond is now well controlled. - Abstract: Nowadays the availability of very thin diamond layers in the range of nanometers as well as the possibility to characterize such delta-layer structures are required for the field of photonics and spintronics, but also for the development of next generation high power devices involving boron doping. The fabrication of diamond structures with abrupt interfaces such as superlattices and quantum wells has been recently improved. A very accurate characterization is then essential even though the analysis of such structures is arduous and challenging. SIMS analyses are commonly used to obtain depth profiles of dopants. However, below 10 nm in thickness, SIMS induced ion mixing effects which are no longer negligible. Then the raw SIMS profile might differ from the real dopant profile. In this study, we have analyzed a diamond structure containing a thin boron epilayer, especially synthesized to achieve SIMS analysis on both sides and to overcome the effects of ion mixing. We evidence the ion mixing induced by primary ions. Such a structure is a delta diamond layer, comparable to classical boron-doped delta-layer in silicon. Our results show that the growth of boron-doped delta-layer in diamond is now well controlled in terms of thickness and interfaces.

  5. Continuous growth of low-temperature Si epitaxial layer with heavy phosphorous and boron doping using photoepitaxy

    International Nuclear Information System (INIS)

    Yamazaki, T.; Minakata, H.; Ito, T.

    1990-01-01

    The authors grew p + -n + silicon epitaxial layers, heavily doped with phosphorus and boron, continuously at 650 degrees C using low-temperature photoepitaxy. Then N + photoepitaxial layer with a phosphorus concentration above 10 17 cm -3 grown on p - substrate shows high-density surface pits, and as a result, poor crystal quality. However, when this n + photoepitaxial layer is grown continuously on a heavily boron-doped p + photoepitaxial layer, these surface pits are drastically decreased, disappearing completely above a hole concentration of 10 19 cm -3 in the p + photoepitaxial layer. The phosphorus activation ratio and electron Hall mobility in the heavily phosphorus-doped n + photoexpitaxial layer were also greatly improved. The authors investigated the cause of the surface pitting using a scanning transmission electron microscope, secondary ion mass spectroscopy, and energy-dispersive x-ray spectroscopy. They characterized the precipitation of phosphorus atoms on the crystal surface at the initial stage of the heavily phosphorus-doped n + photoexpitaxial layer growth

  6. Comparison on mechanical properties of heavily phosphorus- and arsenic-doped Czochralski silicon wafers

    Science.gov (United States)

    Yuan, Kang; Sun, Yuxin; Lu, Yunhao; Liang, Xingbo; Tian, Daxi; Ma, Xiangyang; Yang, Deren

    2018-04-01

    Heavily phosphorus (P)- and arsenic (As)-doped Czochralski silicon (CZ-Si) wafers generally act as the substrates for the epitaxial silicon wafers used to fabricate power and communication devices. The mechanical properties of such two kinds of n-type heavily doped CZ silicon wafers are vital to ensure the quality of epitaxial silicon wafers and the manufacturing yields of devices. In this work, the mechanical properties including the hardness, Young's modulus, indentation fracture toughness and the resistance to dislocation motion have been comparatively investigated for heavily P- and As-doped CZ-Si wafers. It is found that heavily P-doped CZ-Si possesses somewhat higher hardness, lower Young's modulus, larger indentation fracture toughness and stronger resistance to dislocation motion than heavily As-doped CZ-Si. The mechanisms underlying this finding have been tentatively elucidated by considering the differences in the doping effects of P and As in silicon.

  7. Morphological and electrochemical studies of spherical boron doped diamond electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Mendes de Barros, R.C. [IQ/USP, Av. Lineu Prestes, 748, Bloco 2 Superior, Cidade Universitaria, Sao Paulo/SP, 05508-900 (Brazil); Ferreira, N.G. [LAS/INPE, Av. dos Astronautas, 1758, Jardim da Granja, Sao Jose dos Campos/SP, 12245-970 (Brazil); Azevedo, A.F. [LAS/INPE, Av. dos Astronautas, 1758, Jardim da Granja, Sao Jose dos Campos/SP, 12245-970 (Brazil); Corat, E.J. [LAS/INPE, Av. dos Astronautas, 1758, Jardim da Granja, Sao Jose dos Campos/SP, 12245-970 (Brazil); Sumodjo, P.T.A. [IQ/USP, Av. Lineu Prestes, 748, Bloco 2 Superior, Cidade Universitaria, Sao Paulo/SP, 05508-900 (Brazil); Serrano, S.H.P. [IQ/USP, Av. Lineu Prestes, 748, Bloco 2 Superior, Cidade Universitaria, Sao Paulo/SP, 05508-900 (Brazil)]. E-mail: shps@iq.usp.br

    2006-08-14

    Morphological and electrochemical characteristics of boron doped diamond electrode in new geometric shape are presented. The main purpose of this study is a comparison among voltammetric behavior of planar glassy carbon electrode (GCE), planar boron doped diamond electrode (PDDE) and spherical boron doped diamond electrode (SDDE), obtained from similar experimental parameters. SDDE was obtained by the growth of boron doped film on textured molybdenum tip. This electrode does not present microelectrode characteristics. However, its voltammetric peak current, determined at low scan rates, is largest associated to the smallest {delta}E {sub p} values for ferrocyanide system when compared with PDDE or GCE. In addition, the capacitance is about 200 times smaller than that for GCE. These results show that the analytical performance of boron doped diamond electrodes can be implemented just by the change of sensor geometry, from plane to spherical shape.

  8. Growing of synthetic diamond boron-doped films for analytical applications

    International Nuclear Information System (INIS)

    Barros, Rita de Cassia Mendes de; Suarez-Iha, Maria Encarnacion Vazquez; Corat, Evaldo Jose; Iha, Koshun

    1999-01-01

    Chemical vapor deposition (CVD) technology affords the possibility of producing synthetic diamond film electrodes, with several advantageous properties due the unique characteristics of diamond. In this work, we present the study of boron-doped diamond films growth on molybdenum and silicon substrates, using boron trioxide as dopant in a filament assisted CVD reactor. The objective was to obtain semiconductor diamond for use as electrode. The samples were characterized by scanning electron microscopy and Raman spectroscopy to confirm morphology and doping levels. We have assembled electrodes with the various samples, Pt, Mo, Si and diamond, by utilizing brass and left as base materials. The electrodes were tested in neutralization potentiometric titrations for future use in electroanalysis. Boron-doped electrodes have very good performance compared with Pt, widely used in analytical chemistry. (author)

  9. Thermal diffusion boron doping of single-crystal natural diamond

    Energy Technology Data Exchange (ETDEWEB)

    Seo, Jung-Hun; Mikael, Solomon; Mi, Hongyi; Venkataramanan, Giri; Ma, Zhenqiang, E-mail: mazq@engr.wisc.edu [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Wu, Henry; Morgan, Dane [Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Blanchard, James P. [Department of Nuclear Engineering and Engineering Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Zhou, Weidong [Department of Electrical Engineering, NanoFAB Center, University of Texas at Arlington, Arlington, Texas 76019 (United States); Gong, Shaoqin [Department of Biomedical Engineering and Wisconsin Institute for Discovery, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

    2016-05-28

    With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

  10. Thermal diffusion boron doping of single-crystal natural diamond

    International Nuclear Information System (INIS)

    Seo, Jung-Hun; Mikael, Solomon; Mi, Hongyi; Venkataramanan, Giri; Ma, Zhenqiang; Wu, Henry; Morgan, Dane; Blanchard, James P.; Zhou, Weidong; Gong, Shaoqin

    2016-01-01

    With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

  11. Charge collection properties of heavily irradiated epitaxial silicon detectors

    International Nuclear Information System (INIS)

    Kramberger, G.; Cindro, V.; Dolenc, I.; Fretwurst, E.; Lindstroem, G.; Mandic, I.; Mikuz, M.; Zavrtanik, M.

    2005-01-01

    Detectors processed on epitaxial silicon seem to be a viable solution for the extreme radiation levels in the innermost layers of tracking detectors at upgraded LHC (SLHC). A set of epitaxial pad detectors of 50 and 75μm thicknesses (ρ=50Ωcm) was irradiated with 24GeV/c protons and reactor neutrons up to equivalent fluences of 10 16 cm -2 . Charge collection for minimum ionizing electrons from a 90 Sr source was measured using a charge sensitive preamplifier and a 25ns shaping circuit. The dependence of collected charge on annealing time and operation temperature was studied. Results were used to predict the performance of fine pitch pixel detectors proposed for SLHC

  12. Charge collection properties of heavily irradiated epitaxial silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Kramberger, G. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia)]. E-mail: Gregor.Kramberger@ijs.si; Cindro, V. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Dolenc, I. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Fretwurst, E. [University of Hamburg, Institut fuer Experimentalphysik, Luruper Chaussee 149, D-22761 Hamburg (Germany); Lindstroem, G. [University of Hamburg, Institut fuer Experimentalphysik, Luruper Chaussee 149, D-22761 Hamburg (Germany); Mandic, I. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Mikuz, M. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Zavrtanik, M. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia)

    2005-12-01

    Detectors processed on epitaxial silicon seem to be a viable solution for the extreme radiation levels in the innermost layers of tracking detectors at upgraded LHC (SLHC). A set of epitaxial pad detectors of 50 and 75{mu}m thicknesses ({rho}=50{omega}cm) was irradiated with 24GeV/c protons and reactor neutrons up to equivalent fluences of 10{sup 16}cm{sup -2}. Charge collection for minimum ionizing electrons from a {sup 90}Sr source was measured using a charge sensitive preamplifier and a 25ns shaping circuit. The dependence of collected charge on annealing time and operation temperature was studied. Results were used to predict the performance of fine pitch pixel detectors proposed for SLHC.

  13. Porous boron doped diamonds as metal-free catalysts for the oxygen reduction reaction in alkaline solution

    Science.gov (United States)

    Suo, Ni; Huang, Hao; Wu, Aimin; Cao, Guozhong; Hou, Xiaoduo; Zhang, Guifeng

    2018-05-01

    Porous boron doped diamonds (BDDs) were obtained on foam nickel substrates with a porosity of 80%, 85%, 90% and 95% respectively by hot filament chemical vapor deposition (HFCVD) technology. Scanning electron microscopy (SEM) reveals that uniform and compact BDDs with a cauliflower-like morphology have covered the overall frame of the foam nickel substrates. Raman spectroscopy shows that the BDDs have a poor crystallinity due to heavily doping boron. X-ray photoelectron spectroscopy (XPS) analysis effectively demonstrates that boron atoms can be successfully incorporated into the crystal lattice of diamonds. Electrochemical measurements indicate that the oxygen reduction potential is unaffected by the specific surface area (SSA), and both the onset potential and the limiting diffusion current density are enhanced with increasing SSA. It is also found that the durability and methanol tolerance of the boron doped diamond catalysts are attenuated as the increasing of SSA. The SSA of the catalyst is directly proportional to the oxygen reduction activity and inversely to the durability and methanol resistance. These results provide a reference to the application of porous boron doped diamonds as potential cathodic catalysts for the oxygen reduction reaction in alkaline solution by adjusting the SSA.

  14. Raman spectroscopy of boron-doped single-layer graphene.

    Science.gov (United States)

    Kim, Yoong Ahm; Fujisawa, Kazunori; Muramatsu, Hiroyuki; Hayashi, Takuya; Endo, Morinobu; Fujimori, Toshihiko; Kaneko, Katsumi; Terrones, Mauricio; Behrends, Jan; Eckmann, Axel; Casiraghi, Cinzia; Novoselov, Kostya S; Saito, Riichiro; Dresselhaus, Mildred S

    2012-07-24

    The introduction of foreign atoms, such as nitrogen, into the hexagonal network of an sp(2)-hybridized carbon atom monolayer has been demonstrated and constitutes an effective tool for tailoring the intrinsic properties of graphene. Here, we report that boron atoms can be efficiently substituted for carbon in graphene. Single-layer graphene substitutionally doped with boron was prepared by the mechanical exfoliation of boron-doped graphite. X-ray photoelectron spectroscopy demonstrated that the amount of substitutional boron in graphite was ~0.22 atom %. Raman spectroscopy demonstrated that the boron atoms were spaced 4.76 nm apart in single-layer graphene. The 7-fold higher intensity of the D-band when compared to the G-band was explained by the elastically scattered photoexcited electrons by boron atoms before emitting a phonon. The frequency of the G-band in single-layer substitutionally boron-doped graphene was unchanged, which could be explained by the p-type boron doping (stiffening) counteracting the tensile strain effect of the larger carbon-boron bond length (softening). Boron-doped graphene appears to be a useful tool for engineering the physical and chemical properties of graphene.

  15. Erratum to: Influence of boron doping on mechanical and tribological ...

    Indian Academy of Sciences (India)

    2016-08-26

    Aug 26, 2016 ... Erratum to: Influence of boron doping on mechanical and tribological properties in multilayer CVD-diamond coating systems. SAJAD HUSSAIN DIN M A SHAH N A SHEIKH K A NAJAR K RAMASUBRAMANIAN S BALAJI M S RAMACHANDRA RAO. Volume 39 Issue 7 December 2016 pp 1763-1763 ...

  16. Photoluminescence properties of boron doped InSe single crystals

    International Nuclear Information System (INIS)

    Ertap, H.; Bacıoğlu, A.; Karabulut, M.

    2015-01-01

    Undoped and boron doped InSe single crystals were grown by Bridgman–Stockbarger technique. The PL properties of undoped, 0.1% and 0.5% boron doped InSe single crystals have been investigated at different temperatures. PL measurements revealed four emission bands labeled as A, B, C and D in all the single crystals studied. These emission bands were associated with the radiative recombination of direct free excitons (n=1), impurity-band transitions, donor–acceptor recombinations and structural defect related band (impurity atoms, defects, defect complexes, impurity-vacancy complex etc.), respectively. The direct free exciton (A) bands of undoped, 0.1% and 0.5% boron doped InSe single crystals were observed at 1.337 eV, 1.335 eV and 1.330 eV in the PL spectra measured at 12 K, respectively. Energy positions and PL intensities of the emission bands varied with boron addition. The FWHM of direct free exciton band increases while the FWHM of the D emission band decreases with boron doping. Band gap energies of undoped and boron doped InSe single crystals were calculated from the PL measurements. It was found that the band gap energies of InSe single crystals decreased with increasing boron content. - Highlights: • PL spectra of InSe crystals have been studied as a function of temperature. • Four emission bands were observed in the PL spectra at low temperatures. • PL intensity and position of free exciton band vary with doping and temperature. • Temperature dependences of the bands observed in the PL spectra were analyzed

  17. Grain-boundary contamination and ductility loss in boron-doped Ni3Al

    International Nuclear Information System (INIS)

    Takeyama, M.; Liu, C.T.

    1989-01-01

    The effect of heat treatment on ductility loss in a boron-doped Ni 3 Al was studied by tensile tests of specimens exposed to contaminated environments. Specimens heat treated at 1323 K exhibit only 3.3 pct ductility at 1033 K, whereas a previous study reported a tensile ductility of about 24 pct for specimens heat treated in a high vacuum system. Aluminum oxide and silicon-contaminated regions were observed at and near external surfaces of annealed specimens. The reactions occurring during heat treatment are interpreted in terms of thermodynamics. An Auger electron spectroscopy study revealed oxygen penetration along grain boundaries during annealing. Although the surface oxide layer and silicon contamination both contribute to some reductions in ductility, the major cause for embrittlement comes from oxygen penetration along grain boundaries

  18. Possible observation of the Berezinskii-Kosterlitz-Thouless transition in boron-doped diamond films

    Science.gov (United States)

    Coleman, Christopher; Bhattacharyya, Somnath

    2017-11-01

    The occurrence of the Berezinskii-Kosterlitz-Thouless (BKT) transition is investigated in heavily boron-doped nanocrystalline diamond films through a combination of current-voltage and resistance measurements. We observe transport features suggesting a robust BKT transition along with transport features related to vortex pinning in nanocrystalline diamond films with smaller grain size. The vortex core energy determined through analysis of the resistance temperature curves was found to be anti-correlated to the BKT transition temperatures. It is also observed that the higher BKT temperature is related to an increased vortex-antivortex binding energy derived from the activated transport regions. Further, the magnetic field induced superconductor insulator transition shows the possibility of the charge glass state. The consequences of granularity such as localization and vortex pinning can lead to tuneable BKT temperatures and strongly affects the field induced insulating state.

  19. Optical Gaps in Pristine and Heavily Doped Silicon Nanocrystals: DFT versus Quantum Monte Carlo Benchmarks.

    Science.gov (United States)

    Derian, R; Tokár, K; Somogyi, B; Gali, Á; Štich, I

    2017-12-12

    We present a time-dependent density functional theory (TDDFT) study of the optical gaps of light-emitting nanomaterials, namely, pristine and heavily B- and P-codoped silicon crystalline nanoparticles. Twenty DFT exchange-correlation functionals sampled from the best currently available inventory such as hybrids and range-separated hybrids are benchmarked against ultra-accurate quantum Monte Carlo results on small model Si nanocrystals. Overall, the range-separated hybrids are found to perform best. The quality of the DFT gaps is correlated with the deviation from Koopmans' theorem as a possible quality guide. In addition to providing a generic test of the ability of TDDFT to describe optical properties of silicon crystalline nanoparticles, the results also open up a route to benchmark-quality DFT studies of nanoparticle sizes approaching those studied experimentally.

  20. Operation of heavily irradiated silicon detectors in non-depletion mode

    International Nuclear Information System (INIS)

    Verbitskaya, E.; Eremin, V.; Ilyashenko, I.; Li, Z.; Haerkoenen, J.; Tuovinen, E.; Luukka, P.

    2006-01-01

    The non-depletion detector operation mode has generally been disregarded as an option in high-energy physics experiments. In this paper, the non-depletion operation is examined by detailed analysis of the electric field distribution and the current pulse response of heavily irradiated silicon (Si) detectors. The previously reported model of double junction in heavily irradiated Si detector is further developed and a simulation of the current pulse response has been performed. It is shown that detectors can operate in a non-depletion mode due to the fact that the value of the electric field in a non-depleted region is high enough for efficient carrier drift. This electric field originates from the current flow through the detector and a consequent drop of the potential across high-resistivity bulk of a non-depleted region. It is anticipated that the electric field in a non-depleted region, which is still electrically neutral, increases with fluence that improves the non-depleted detector operation. Consideration of the electric field in a non-depleted region allows the explanation of the recorded double-peak current pulse shape of heavily irradiated Si detectors and definition of the requirements for the detector operational conditions. Detailed reconstruction of the electric field distribution gives new information on radiation effects in Si detectors

  1. Structure prediction of boron-doped graphene by machine learning

    Science.gov (United States)

    M. Dieb, Thaer; Hou, Zhufeng; Tsuda, Koji

    2018-06-01

    Heteroatom doping has endowed graphene with manifold aspects of material properties and boosted its applications. The atomic structure determination of doped graphene is vital to understand its material properties. Motivated by the recently synthesized boron-doped graphene with relatively high concentration, here we employ machine learning methods to search the most stable structures of doped boron atoms in graphene, in conjunction with the atomistic simulations. From the determined stable structures, we find that in the free-standing pristine graphene, the doped boron atoms energetically prefer to substitute for the carbon atoms at different sublattice sites and that the para configuration of boron-boron pair is dominant in the cases of high boron concentrations. The boron doping can increase the work function of graphene by 0.7 eV for a boron content higher than 3.1%.

  2. Model for the boron-doping dependence of the critical temperature of superconducting boron-doped diamond

    Czech Academy of Sciences Publication Activity Database

    Šopík, Břetislav

    2009-01-01

    Roč. 11, č. 10 (2009), 103026/1-103026/10 ISSN 1367-2630 R&D Projects: GA AV ČR IAA100100712 Grant - others:GAČR(CZ) GA202/07/0597 Institutional research plan: CEZ:AV0Z10100521 Keywords : superconductivity * boron-doped diamond Subject RIV: BE - Theoretical Physics Impact factor: 3.312, year: 2009

  3. Spin relaxation through lateral spin transport in heavily doped n -type silicon

    Science.gov (United States)

    Ishikawa, M.; Oka, T.; Fujita, Y.; Sugiyama, H.; Saito, Y.; Hamaya, K.

    2017-03-01

    We experimentally study temperature-dependent spin relaxation including lateral spin diffusion in heavily doped n -type silicon (n+-Si ) layers by measuring nonlocal magnetoresistance in small-sized CoFe/MgO/Si lateral spin-valve (LSV) devices. Even at room temperature, we observe large spin signals, 50-fold the magnitude of those in previous works on n+-Si . By measuring spin signals in LSVs with various center-to-center distances between contacts, we reliably evaluate the temperature-dependent spin diffusion length (λSi) and spin lifetime (τSi). We find that the temperature dependence of τSi is affected by that of the diffusion constant in the n+-Si layers, meaning that it is important to understand the temperature dependence of the channel mobility. A possible origin of the temperature dependence of τSi is discussed in terms of the recent theories by Dery and co-workers.

  4. Enhanced oxidation resistance of carbon fiber reinforced lithium aluminosilicate composites by boron doping

    International Nuclear Information System (INIS)

    Xia, Long; Jin, Feng; Zhang, Tao; Hu, Xueting; Wu, Songsong; Wen, Guangwu

    2015-01-01

    Highlights: • C f /LAS composites exhibit enhanced oxidation resistance by boron doping. • Boron doping is beneficial to the improvement of graphitization degree of carbon fibers. • Graphitization of carbon fibers together with the decrease of viscosity of LAS matrix is responsible to the enhancement of oxidation resistance of C f /LAS composites. - Abstract: Carbon fiber reinforced lithium aluminosilicate matrix composites (C f /LAS) modified with boron doping were fabricated and oxidized for 1 h in static air. Weight loss, residual strength and microstructure were analyzed. The results indicate that boron doping has a remarkable effect on improving the oxidation resistance for C f /LAS. The synergism of low viscosity of LAS matrix at high temperature and formation of graphite crystals on the surface of carbon fibers, is responsible for excellent oxidation resistance of the boron doped C f /LAS.

  5. Insight into boron-doped diamond Raman spectra characteristic features

    Czech Academy of Sciences Publication Activity Database

    Mortet, Vincent; Vlčková Živcová, Zuzana; Taylor, Andrew; Frank, Otakar; Hubík, Pavel; Trémouilles, D.; Jomard, F.; Barjon, J.; Kavan, Ladislav

    2017-01-01

    Roč. 115, May (2017), s. 279-284 ISSN 0008-6223 R&D Projects: GA ČR GA13-31783S; GA MŠk 7AMB16FR004 Grant - others:AV ČR(CZ) Fellowship J. E. Purkyně Institutional support: RVO:68378271 ; RVO:61388955 Keywords : diamond * boron doping * Raman spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism; CG - Electrochemistry (UFCH-W) OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.); Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis) (UFCH-W) Impact factor: 6.337, year: 2016

  6. The origin of double peak electric field distribution in heavily irradiated silicon detectors

    CERN Document Server

    Eremin, V; Li, Z

    2002-01-01

    The first observation of double peak (DP) electric field distribution in heavily neutron irradiated (>10 sup 1 sup 4 n/cm sup 2) semiconductor detectors has been published about 6 yr ago. However, this effect was not quantitatively analyzed up to now. The explanation of the DP electric field distribution presented in this paper is based on the properties of radiation induced deep levels in silicon, which act as deep traps, and on the distribution of the thermally generated free carrier concentration in the detector bulk. In the frame of this model, the earlier published considerations on the so-called 'double junction (DJ) effect' are discussed as well. The comparison of the calculated electric field profiles at different temperatures with the experimental ones allows one to determine a set of deep levels. This set of deep levels, and their charge filling status are essential to the value and the distribution of space charge in the space charge region in the range of 305-240 K, which is actual temperature ran...

  7. Thermal oxidation effect on structural and optical properties of heavily doped phosphorus polycrystalline silicon films

    Energy Technology Data Exchange (ETDEWEB)

    Birouk, B.; Madi, D. [Universite de Jijel, Laboratoire d' Etudes et de Modelisation en Electrotechnique (LAMEL), Cite Ouled Aissa, BP 98, Jijel (Algeria)

    2011-08-15

    The study reported in this paper contributes to better understanding the thermal oxidation effect on structural and optical properties of polycrystalline silicon heavily in situ P-LPCVD films. The deposits, doped at levels 3 x 10{sup 19} and 1.6 x 10{sup 20} cm{sup -3}, have been elaborated from silane decomposition (400 mTorrs, 605 C) on monosilicon substrate oriented left angle 111 right angle. The thermal oxidation was performed at temperatures: 850 C during 1 hour, 1000, 1050, and 1100 C during 15 minutes. The XRD spectra analysis pointed out significant left angle 111 right angle texture evolution, while in the case of left angle 220 right angle and left angle 311 right angle textures, the intensities are practically invariant (variations fall in the uncertainty intervals). The optical characterizations showed that refractive index and absorption coefficient are very sensitive to the oxidation treatment, mainly when the doping level is not very high. We think that atomic oxygen acts as defects passivating agent leading to carriers' concentration increasing. Besides, the optical behavior is modeled in visible and near infrared, by a seven-term polynomial function n {sup 2}=f({lambda} {sup 2}), with alternate signs, instead of theoretically unlimited terms number from Drude's model. It has been shown that fitting parameters fall on Gaussian curves like they do in the theoretical model. (orig.)

  8. Plasmonic Properties of Silicon Nanocrystals Doped with Boron and Phosphorus.

    Science.gov (United States)

    Kramer, Nicolaas J; Schramke, Katelyn S; Kortshagen, Uwe R

    2015-08-12

    Degenerately doped silicon nanocrystals are appealing plasmonic materials due to silicon's low cost and low toxicity. While surface plasmonic resonances of boron-doped and phosphorus-doped silicon nanocrystals were recently observed, there currently is poor understanding of the effect of surface conditions on their plasmonic behavior. Here, we demonstrate that phosphorus-doped silicon nanocrystals exhibit a plasmon resonance immediately after their synthesis but may lose their plasmonic response with oxidation. In contrast, boron-doped nanocrystals initially do not exhibit plasmonic response but become plasmonically active through postsynthesis oxidation or annealing. We interpret these results in terms of substitutional doping being the dominant doping mechanism for phosphorus-doped silicon nanocrystals, with oxidation-induced defects trapping free electrons. The behavior of boron-doped silicon nanocrystals is more consistent with a strong contribution of surface doping. Importantly, boron-doped silicon nanocrystals exhibit air-stable plasmonic behavior over periods of more than a year.

  9. Noncrucial role of the defects in the splitting for hydrogen implanted silicon with high boron concentration

    International Nuclear Information System (INIS)

    Popov, V.P.; Stas, V.F.; Antonova, I.V.

    1999-01-01

    The present work deals with the investigation of the electrical and structural properties of heavily boron-doped silicon irradiated by hydrogen. Blistering and splitting processes are enhanced with an increase in boron concentration in the crystal. The measured values of perpendicular strain are over 0.7% which corresponds to a gas overpressure of 0.5 GPa. Processes which lead to blistering and splitting is better described in the frame of a gas pressure model than a model of local stress caused by the defects

  10. Screening metal nanoparticles using boron-doped diamond microelectrodes

    Energy Technology Data Exchange (ETDEWEB)

    Ivandini, Tribidasari A., E-mail: ivandini.tri@sci.ui.ac.id; Rangkuti, Prasmita K. [Department of Chemistry, FMIPA, Universitas Indonesia, Kampus UI Depok (Indonesia); Einaga, Yasuaki [Department of Chemistry, Faculty of Science and Technology, Keio University (Japan); JST ACCEL, 3-14-1 Hiyoshi, Yokohama 223-8522 (Japan)

    2016-04-19

    Boron-doped diamond (BDD) microelectrodes were used to observe the correlation between electrocatalytic currents caused by individual Pt nanoparticle (Pt-np) collisions at the electrode. The BDD microelectrodes, ∼20 µm diameter and ∼2 µm particle size, were fabricated at the surface of tungsten wires. Pt-np with a size of 1 to 5 nm with agglomerations up to 20 nm was used for observation. The electrolytic currents were observed via catalytic reaction of 15 mM hydrazine in 50 mM phosphate buffer solution at Pt-np at 0.4 V when it collides with the surface of the microelectrodes. The low current noise and wider potential window in the measurements using BDD microelectrode produced a better results, which represents a better correlation to the TEM result of the Pt-np, compared to when gold microelectrodes was used.

  11. Detection of DNA nucleotides on pretreated boron doped diamond electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Garbellini, Gustavo S.; Uliana, Carolina V.; Yamanaka, Hideko [UNESP, Araraquara, SP (Brazil). Inst. de Quimica

    2011-07-01

    The individual detection and equimolar mixture of DNA nucleotides guanosine monophosphate (GMP), adenosine monophosphate (AMP), thymidine (TMP) and cytidine (CMP) 5'-monophosphate using square wave voltammetry was performed on boron doped diamond (BDD) electrodes cathodically (Red-DDB) and anodically (Oxi-DDB) pretreated. The oxidation of individual DNA nucleotides was more sensitive on Oxi-BDD electrode. In a simultaneous detection of nucleotides, the responses of GMP, AMP, TMP and CMP were very adequate on both treated electrodes. Particularly, more sensitive and separate peaks for TMP and CMP on Oxi-BDD and Red-BDD electrodes, respectively, were observed after deconvolution procedure. The detection of nucleotides in aqueous solutions will certainly contribute for genotoxic evaluation of substances and hybridization reactions by immobilizing ss or ds-DNA on BDD surface. (author)

  12. Electron field emission from boron doped microcrystalline diamond

    International Nuclear Information System (INIS)

    Roos, M.; Baranauskas, V.; Fontana, M.; Ceragioli, H.J.; Peterlevitz, A.C.; Mallik, K.; Degasperi, F.T.

    2007-01-01

    Field emission properties of hot filament chemical vapor deposited boron doped polycrystalline diamond have been studied. Doping level (N B ) of different samples has been varied by the B/C concentration in the gas feed during the growth process and doping saturation has been observed for high B/C ratios. Threshold field (E th ) for electron emission as function of B/C concentration has been measured, and the influences of grain boundaries, doping level and surface morphology on field emission properties have been investigated. Carrier transport through conductive grains and local emission properties of surface sites have been figured out to be two independent limiting effects in respect of field emission. Emitter current densities of 500 nA cm -2 were obtained using electric fields less than 8 V/μm

  13. Screening metal nanoparticles using boron-doped diamond microelectrodes

    International Nuclear Information System (INIS)

    Ivandini, Tribidasari A.; Rangkuti, Prasmita K.; Einaga, Yasuaki

    2016-01-01

    Boron-doped diamond (BDD) microelectrodes were used to observe the correlation between electrocatalytic currents caused by individual Pt nanoparticle (Pt-np) collisions at the electrode. The BDD microelectrodes, ∼20 µm diameter and ∼2 µm particle size, were fabricated at the surface of tungsten wires. Pt-np with a size of 1 to 5 nm with agglomerations up to 20 nm was used for observation. The electrolytic currents were observed via catalytic reaction of 15 mM hydrazine in 50 mM phosphate buffer solution at Pt-np at 0.4 V when it collides with the surface of the microelectrodes. The low current noise and wider potential window in the measurements using BDD microelectrode produced a better results, which represents a better correlation to the TEM result of the Pt-np, compared to when gold microelectrodes was used.

  14. Nanodiamonds for device applications: An investigation of the properties of boron-doped detonation nanodiamonds.

    Science.gov (United States)

    Afandi, Abdulkareem; Howkins, Ashley; Boyd, Ian W; Jackman, Richard B

    2018-02-19

    The inclusion of boron within nanodiamonds to create semiconducting properties would create a new class of applications in the field of nanodiamond electronics. Theoretical studies have differed in their conclusions as to whether nm-scale NDs would support a stable substitutional boron state, or whether such a state would be unstable, with boron instead aggregating or attaching to edge structures. In the present study detonation-derived NDs with purposefully added boron during the detonation process have been studied with a wide range of experimental techniques. The DNDs are of ~4 nm in size, and have been studied with CL, PL, Raman and IR spectroscopies, AFM and HR-TEM and electrically measured with impedance spectroscopy; it is apparent that the B-DNDs studied here do indeed support substitutional boron species and hence will be acting as semiconducting diamond nanoparticles. Evidence for moderate doping levels in some particles (~10 17 B cm -3 ), is found alongside the observation that some particles are heavily doped (~10 20 B cm -3 ) and likely to be quasi-metallic in character. The current study has therefore shown that substitutional boron doping in nm NDs is in fact possible, opening-up the path to a whole host of new applications for this interesting class of nano-particles.

  15. Dependence of reaction pressure on deposition and properties of boron-doped freestanding diamond films

    International Nuclear Information System (INIS)

    Li Liuan; Li Hongdong; Lue Xianyi; Cheng Shaoheng; Wang Qiliang; Ren Shiyuan; Liu Junwei; Zou Guangtian

    2010-01-01

    In this paper, we investigate the reaction pressure-dependent growth and properties of boron-doped freestanding diamond films, synthesized by hot filament chemical vapor deposition (HFCVD) at different boron-doping levels. With the decrease in pressure, the growth feature of the films varies from mixed [1 1 1] and [1 1 0] to dominated [1 1 1] texture. The low reaction pressure, as well as high boron-doping level, results in the increase (decrease) of carrier concentration (resistivity). The high concentration of atomic hydrogen in the ambient and preferable [1 1 1] growth, due to the low reaction pressure, is available for the enhancement of boron doping. The estimated residual stress increases with increase in the introducing boron level.

  16. The water decomposition reactions on boron-doped diamond electrodes

    International Nuclear Information System (INIS)

    Suffredini, Hugo B.; Machado, Sergio A.S; Avaca, Luis A.

    2004-01-01

    The electrochemical processes occurring at both edges of the wide electrochemical window of the boron doped diamond (BDD) electrode were studied by polarization curves experiments to evaluate the apparent energy of activation for the rate determining step in each reaction. It was found that the hydrogen evolution reaction occurs by a Volmer-Heyrovsky mechanism with the first step being the RDS. Moreover, the apparent energy of activation calculated from the Tafel plots presented a value as high as 150 kJ mol -1 , indicating the formation of the M-H intermediate that is characteristic for the Volmer step. On the other hand, the apparent energy of activation for the oxygen evolution reaction was found to be 106 kJ mol -1 suggesting that the RDS in this mechanism is the initial adsorption step. In this way, it was demonstrated that the interaction between water molecules and the electrode surface is strongly inhibited on BDD thus justifying the extended potential window observed for this material. (author)

  17. The water decomposition reactions on boron-doped diamond electrodes

    Directory of Open Access Journals (Sweden)

    Suffredini Hugo B

    2004-01-01

    Full Text Available The electrochemical processes occurring at both edges of the wide electrochemical window of the boron doped diamond (BDD electrode were studied by polarization curves experiments to evaluate the apparent energy of activation for the rate determining step in each reaction. It was found that the hydrogen evolution reaction occurs by a Volmer-Heyrovsky mechanism with the first step being the RDS. Moreover, the apparent energy of activation calculated from the Tafel plots presented a value as high as 150 kJ mol-1, indicating the formation of the M-H intermediate that is characteristic for the Volmer step. On the other hand, the apparent energy of activation for the oxygen evolution reaction was found to be 106 kJ mol-1 suggesting that the RDS in this mechanism is the initial adsorption step. In this way, it was demonstrated that the interaction between water molecules and the electrode surface is strongly inhibited on BDD thus justifying the extended potential window observed for this material.

  18. Boron Doped Nanocrystalline Diamond Films for Biosensing Applications

    Directory of Open Access Journals (Sweden)

    V. Petrák

    2011-01-01

    Full Text Available With the rise of antibiotic resistance of pathogenic bacteria there is an increased demand for monitoring the functionality of bacteria membranes, the disruption of which can be induced by peptide-lipid interactions. In this work we attempt to construct and disrupt supported lipid membranes (SLB on boron doped nanocrystalline diamond (B-NCD. Electrochemical Impedance Spectroscopy (EIS was used to study in situ changes related to lipid membrane formation and disruption by peptide-induced interactions. The observed impedance changes were minimal for oxidized B-NCD samples, but were still detectable in the low frequency part of the spectra. The sensitivity for the detection of membrane formation and disruption was significantly higher for hydrogenated B-NCD surfaces. Data modeling indicates large changes in the electrical charge when an electrical double layer is formed at the B-NCD/SLB interface, governed by ion absorption. By contrast, for oxidized B-NCD surfaces, these changes are negligible indicating little or no change in the surface band bending profile.

  19. Anode performance of boron-doped graphites prepared from shot and sponge cokes

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Tao; Luo, Ruiying [School of Science, Beihang University, Beijing 100083 (China); Yoon, Seong-Ho; Mochida, Isao [Institute for Materials Chemistry and Engineering, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan)

    2010-03-15

    The structures and anode performances of graphitized pristine and boron-doped shot and sponge cokes have been comparatively studied by means of scanning electron microscope (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and galvanostatic measurement. The results show that high degree of graphitization can be obtained by the substituted boron atom in the carbon lattice, and boron in the resultant boron-doped graphites mainly exist in the form of boron carbide and boron substituted in the carbon lattice. Both of boron-doped graphites from shot and sponge cokes obtain discharge capacity of 350 mAh g{sup -1} and coulombic efficiency above 90%. Apart from commonly observed discharge plateau for graphite, boron-doped samples in this study also show a small plateau at ca. 0.06 V. This phenomenon can be explained that Li ion stores in the site to be void-like spaces that are produced by ''molecular bridging'' between the edge sites of graphene layer stack with a release of boron atoms substituted at the edge of graphene layer. The effect of the amount of boron dopant and graphitization temperature on the anode performance of boron-doped graphite are also investigated in this paper. (author)

  20. Anode performance of boron-doped graphites prepared from shot and sponge cokes

    Science.gov (United States)

    Liu, Tao; Luo, Ruiying; Yoon, Seong-Ho; Mochida, Isao

    The structures and anode performances of graphitized pristine and boron-doped shot and sponge cokes have been comparatively studied by means of scanning electron microscope (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and galvanostatic measurement. The results show that high degree of graphitization can be obtained by the substituted boron atom in the carbon lattice, and boron in the resultant boron-doped graphites mainly exist in the form of boron carbide and boron substituted in the carbon lattice. Both of boron-doped graphites from shot and sponge cokes obtain discharge capacity of 350 mAh g -1 and coulombic efficiency above 90%. Apart from commonly observed discharge plateau for graphite, boron-doped samples in this study also show a small plateau at ca. 0.06 V. This phenomenon can be explained that Li ion stores in the site to be void-like spaces that are produced by "molecular bridging" between the edge sites of graphene layer stack with a release of boron atoms substituted at the edge of graphene layer. The effect of the amount of boron dopant and graphitization temperature on the anode performance of boron-doped graphite are also investigated in this paper.

  1. Effect of layer thickness on device response of silicon heavily supersaturated with sulfur

    Energy Technology Data Exchange (ETDEWEB)

    Hutchinson, David [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy NY 12180 (United States); Department of Physics and Nuclear Engineering, United States Military Academy, West Point NY 10996 (United States); Mathews, Jay [US Army ARDEC – Benét Laboratories, Watervliet NY 12189 (United States); Department of Physics, University of Dayton, Dayton, OH 45469 (United States); Sullivan, Joseph T.; Buonassisi, Tonio [School of Engineering, Massachusetts Institute of Technology, Cambridge MA 02139 (United States); Akey, Austin [School of Engineering, Massachusetts Institute of Technology, Cambridge MA 02139 (United States); Harvard John A. Paulson School of Engineering and Applied Sciences, Cambridge MA 02138 (United States); Aziz, Michael J. [Harvard John A. Paulson School of Engineering and Applied Sciences, Cambridge MA 02138 (United States); Persans, Peter [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy NY 12180 (United States); Warrender, Jeffrey M., E-mail: jwarrend@post.harvard.edu [US Army ARDEC – Benét Laboratories, Watervliet NY 12189 (United States)

    2016-05-15

    We report on a simple experiment in which the thickness of a hyperdoped silicon layer, supersaturated with sulfur by ion implantation followed by pulsed laser melting and rapid solidification, is systematically varied at constant average sulfur concentration, by varying the implantation energy, dose, and laser fluence. Contacts are deposited and the external quantum efficiency (EQE) is measured for visible wavelengths. We posit that the sulfur layer primarily absorbs light but contributes negligible photocurrent, and we seek to support this by analyzing the EQE data for the different layer thicknesses in two interlocking ways. In the first, we use the measured concentration depth profiles to obtain the approximate layer thicknesses, and, for each wavelength, fit the EQE vs. layer thickness curve to obtain the absorption coefficient of hyperdoped silicon for that wavelength. Comparison to literature values for the hyperdoped silicon absorption coefficients [S.H. Pan et al. Applied Physics Letters 98, 121913 (2011)] shows good agreement. Next, we essentially run this process in reverse; we fit with Beer’s law the curves of EQE vs. hyperdoped silicon absorption coefficient for those wavelengths that are primarily absorbed in the hyperdoped silicon layer, and find that the layer thicknesses obtained from the fit are in good agreement with the original values obtained from the depth profiles. We conclude that the data support our interpretation of the hyperdoped silicon layer as providing negligible photocurrent at high S concentrations. This work validates the absorption data of Pan et al. [Applied Physics Letters 98, 121913 (2011)], and is consistent with reports of short mobility-lifetime products in hyperdoped layers. It suggests that for optoelectronic devices containing hyperdoped layers, the most important contribution to the above band gap photoresponse may be due to photons absorbed below the hyperdoped layer.

  2. Effect of layer thickness on device response of silicon heavily supersaturated with sulfur

    Directory of Open Access Journals (Sweden)

    David Hutchinson

    2016-05-01

    Full Text Available We report on a simple experiment in which the thickness of a hyperdoped silicon layer, supersaturated with sulfur by ion implantation followed by pulsed laser melting and rapid solidification, is systematically varied at constant average sulfur concentration, by varying the implantation energy, dose, and laser fluence. Contacts are deposited and the external quantum efficiency (EQE is measured for visible wavelengths. We posit that the sulfur layer primarily absorbs light but contributes negligible photocurrent, and we seek to support this by analyzing the EQE data for the different layer thicknesses in two interlocking ways. In the first, we use the measured concentration depth profiles to obtain the approximate layer thicknesses, and, for each wavelength, fit the EQE vs. layer thickness curve to obtain the absorption coefficient of hyperdoped silicon for that wavelength. Comparison to literature values for the hyperdoped silicon absorption coefficients [S.H. Pan et al. Applied Physics Letters 98, 121913 (2011] shows good agreement. Next, we essentially run this process in reverse; we fit with Beer’s law the curves of EQE vs. hyperdoped silicon absorption coefficient for those wavelengths that are primarily absorbed in the hyperdoped silicon layer, and find that the layer thicknesses obtained from the fit are in good agreement with the original values obtained from the depth profiles. We conclude that the data support our interpretation of the hyperdoped silicon layer as providing negligible photocurrent at high S concentrations. This work validates the absorption data of Pan et al. [Applied Physics Letters 98, 121913 (2011], and is consistent with reports of short mobility-lifetime products in hyperdoped layers. It suggests that for optoelectronic devices containing hyperdoped layers, the most important contribution to the above band gap photoresponse may be due to photons absorbed below the hyperdoped layer.

  3. Stability of boron-doped graphene/copper interface: DFT, XPS and OSEE studies

    Science.gov (United States)

    Boukhvalov, D. W.; Zhidkov, I. S.; Kukharenko, A. I.; Slesarev, A. I.; Zatsepin, A. F.; Cholakh, S. O.; Kurmaev, E. Z.

    2018-05-01

    Two different types of boron-doped graphene/copper interfaces synthesized using two different flow rates of Ar through the bubbler containing the boron source were studied. X-ray photoelectron spectra (XPS) and optically stimulated electron emission (OSEE) measurements have demonstrated that boron-doped graphene coating provides a high corrosion resistivity of Cu-substrate with the light traces of the oxidation of carbon cover. The density functional theory calculations suggest that for the case of substitutional (graphitic) boron-defect only the oxidation near boron impurity is energetically favorable and creation of the vacancies that can induce the oxidation of copper substrate is energetically unfavorable. In the case of non-graphitic boron defects oxidation of the area, a nearby impurity is metastable that not only prevent oxidation but makes boron-doped graphene. Modeling of oxygen reduction reaction demonstrates high catalytic performance of these materials.

  4. Thermal conductivity of high-porosity heavily doped biomorphic silicon carbide prepared from sapele wood biocarbon

    Science.gov (United States)

    Parfen'eva, L. S.; Orlova, T. S.; Smirnov, B. I.; Smirnov, I. A.; Misiorek, H.; Mucha, J.; Jezowski, A.; Cabezas-Rodriguez, R.; Ramirez-Rico, J.

    2012-08-01

    The electrical resistivity and thermal conductivity of high-porosity (˜52 vol %, channel-type pores) bio-SiC samples prepared from sapele wood biocarbon templates have been measured in the temperature range 5-300 K. An analysis has been made of the obtained results in comparison with the data for bio-SiC samples based on beech and eucalyptus, as well as for polycrystalline β-SiC. The conclusion has been drawn that the electrical resistivity and thermal conductivity of bio-SiC samples based on natural wood are typical of heavily doped polycrystalline β-SiC.

  5. Understanding anodic wear at boron doped diamond film electrodes

    International Nuclear Information System (INIS)

    Chaplin, Brian P.; Hubler, David K.; Farrell, James

    2013-01-01

    This research investigated the mechanisms associated with anodic wear of boron-doped diamond (BDD) film electrodes. Cyclic voltammetry (CV), x-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and electrochemical impedance spectroscopy (EIS) were used to measure changes in electrode response and surface chemistry as a function of the charge passed and applied current density. Density functional theory (DFT) modeling was used to evaluate possible reaction mechanisms. The initial hydrogen-terminated surface was electrochemically oxidized at lower potentials than water oxidation (≤ 1.83 V/SHE), and was not catalyzed by the hydrogen-terminated surface. In the region where water oxidation produces hydroxyl radicals (OH·), the hydrogen-terminated surface may also be oxidized by chemical reaction with OH·. Oxygen atoms became incorporated into the surface via reaction of carbon atoms with OH·, forming both C = O and C-OH functional groups, that were also detected by XPS measurements. Experimental and DFT modeling results indicate that the oxygenated diamond surface lowers the potential for activationless water oxidation from 2.74 V/SHE for the hydrogen terminated surface to 2.29 V/SHE for the oxygenated surface. Electrode wear was accelerated at high current densities (i.e., 500 mA cm −2 ), where SEM results indicated oxidation of the BDD film resulted in significant surface roughening. These results are supported by EIS measurements that document an increase in the double-layer capacitance as a function of the charge passed. DFT simulations provide a possible mechanism that explains the observed diamond oxidation. DFT simulation results indicate that BDD edge sites (=CH 2 ) can be converted to COOH functional groups, which are further oxidized via reactions with OH· to form H 2 CO 3(aq.) with an activation energy of 58.9 kJ mol −1

  6. Enhanced Manifold of States Achieved in Heterostructures of Iron Selenide and Boron-Doped Graphene

    Directory of Open Access Journals (Sweden)

    Valentina Cantatore

    2017-10-01

    Full Text Available Enhanced superconductivity is sought by employing heterostructures composed of boron-doped graphene and iron selenide. Build-up of a composite manifold of near-degenerate noninteracting states formed by coupling top-of-valence-band states of FeSe to bottom-of-conduction-band states of boron-doped graphene is demonstrated. Intra- and intersubsystem excitons are explored by means of density functional theory in order to articulate a normal state from which superconductivity may emerge. The results are discussed in the context of electron correlation in general and multi-band superconductivity in particular.

  7. Simulation of Heavily Irradiated Silicon Pixel Sensors and Comparison with Test Beam Measurements

    CERN Document Server

    Chiochia, Vincenzo; Bortoletto, Daniela; Cremaldi, Lucien; Cucciarelli, Susanna; Dorokhov, Andrei; Hoermann, Christoph; Kim, Dongwook; Konecki, Marcin; Kotlinski, Danek; Prokofiev, Kirill; Regenfus, Christian; Rohe, Tilman; Sanders, David A.; Son, Seunghee; Speer, Thomas; Chiochia, Vincenzo; Swartz, Morris; Bortoletto, Daniela; Cremaldi, Lucien; Cucciarelli, Susanna; Dorokhov, Andrei; Hoermann, Christoph; Kim, Dongwook; Konecki, Marcin; Kotlinski, Danek; Prokofiev, Kirill; Regenfus, Christian; Rohe, Tilman; Sanders, David A.; Son, Seunghee; Speer, Thomas

    2004-01-01

    Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective doping density is inconsistent with the data. A two-trap double junction model implemented in the ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of charge trapping observed in the data.

  8. Lifetime studies of self-activated photoluminescence in heavily silicon-doped GaAs

    Science.gov (United States)

    Sauncy, T.; Palsule, C. P.; Holtz, M.; Gangopadhyay, S.; Massie, S.

    1996-01-01

    We report results of a detailed temperature dependence study of photoluminescence lifetime and continuous emission properties in silicon-doped GaAs. The primary focus is on a defect-related emission at 1.269 eV (T=20 K). GaAs crystals were grown using molecular-beam epitaxy with most of the experiments conducted on a sample having a carrier concentration of 4.9×1018 cm-3. The intensity is seen to decrease above 100 K, with no corresponding decrease in the measured lifetime of 9.63+/-0.25 ns. The intensity decrease implies an activation energy of 19+/-2 meV, which is approximately one order of magnitude smaller than what was previously obtained for similar defects in Czochralski-grown GaAs with other dopants. We interpret our results in terms of a configuration coordinate model and obtain a more complete picture of the energy-level structure. The experiments indicate that the upper level in the recombination process is about 20 meV below the conduction-band continuum, with the lower state approximately 300 meV above the valence band. Our results are consistent with the identification of the corresponding defect complex microstructure as being a silicon-at-gallium substitution, weakly interacting with a gallium vacancy second-nearest neighbor, known as the Si-Y defect complex.

  9. Room-temperature near-infrared electroluminescence from boron-diffused silicon pn junction diodes

    Directory of Open Access Journals (Sweden)

    Si eLi

    2015-02-01

    Full Text Available Silicon pn junction diodes with different doping concentrations were prepared by boron diffusion into Czochralski (CZ n-type silicon substrate. Their room-temperature near-infrared electroluminescence (EL was measured. In the EL spectra of the heavily boron doped diode, a luminescence peak at ~1.6 m (0.78 eV was observed besides the band-to-band line (~1.1eV under the condition of high current injection, while in that of the lightly boron doped diode only the band-to-band line was observed. The intensity of peak at 0.78 eV increases exponentially with current injection with no observable saturation at room temperature. Furthermore, no dislocations were found in the cross-sectional transmission electron microscopy image, and no dislocation-related luminescence was observed in the low-temperature photoluminescence spectra. We deduce the 0.78 eV emission originates from the irradiative recombination in the strain region of diodes caused by the diffusion of large number of boron atoms into silicon crystal lattice.

  10. Charge collection efficiency recovery in heavily irradiated silicon detectors operated at cryogenic temperatures

    CERN Document Server

    Da Vià, C; Berglund, P; Borchi, E; Borer, K; Bruzzi, Mara; Buontempo, S; Casagrande, L; Chapuy, S; Cindro, V; Dimcovski, Zlatomir; D'Ambrosio, N; de Boer, Wim; Dezillie, B; Esposito, A P; Granat, V; Grigoriev, E; Heijne, Erik H M; Heising, S; Janos, S; Koivuniemi, J H; Konotov, I; Li, Z; Lourenço, C; Mikuz, M; Niinikoski, T O; Pagano, S; Palmieri, V G; Paul, S; Pirollo, S; Pretzl, Klaus P; Ropotar, I; Ruggiero, G; Salmi, J; Seppä, H; Suni, I; Smith, K; Sonderegger, P; Valtonen, M J; Zavrtanik, M

    1998-01-01

    The charge collection efficiency (CCE) of high resistivity silicon detectors, previously neutron irradiated up to 2*10/sup 15/ n/cm/sup 2/, was measured at different cryogenic temperatures and different bias voltages. In order to $9 study reverse annealing (RA) effects, a few samples were heated to 80 degrees C and kept at room temperature for several months after irradiation. For comparison other samples (NRA) where kept at -10 C after irradiation. The RA and $9 NRA samples, measured at 250 V forward and reverse bias voltage, present a common temperature threshold at 150 K. Below 120 K the CCE is constant and ranges between 55and 65 0.000000or the RA and NRA sample respectively. Similar CCE $9 was measured for a device processed with low resistivity contacts (OHMIC), opening the prospect for a consistent reduction of the cost of large area particle tracking. (7 refs).

  11. Surface structuring of boron doped CVD diamond by micro electrical discharge machining

    Science.gov (United States)

    Schubert, A.; Berger, T.; Martin, A.; Hackert-Oschätzchen, M.; Treffkorn, N.; Kühn, R.

    2018-05-01

    Boron doped diamond materials, which are generated by Chemical Vapor Deposition (CVD), offer a great potential for the application on highly stressed tools, e. g. in cutting or forming processes. As a result of the CVD process rough surfaces arise, which require a finishing treatment in particular for the application in forming tools. Cutting techniques such as milling and grinding are hardly applicable for the finish machining because of the high strength of diamond. Due to its process principle of ablating material by melting and evaporating, Electrical Discharge Machining (EDM) is independent of hardness, brittleness or toughness of the workpiece material. EDM is a suitable technology for machining and structuring CVD diamond, since boron doped CVD diamond is electrically conductive. In this study the ablation characteristics of boron doped CVD diamond by micro electrical discharge machining are investigated. Experiments were carried out to investigate the influence of different process parameters on the machining result. The impact of tool-polarity, voltage and discharge energy on the resulting erosion geometry and the tool wear was analyzed. A variation in path overlapping during the erosion of planar areas leads to different microstructures. The results show that micro EDM is a suitable technology for finishing of boron doped CVD diamond.

  12. Thermal shock resistance of thick boron-doped diamond under extreme heat loads

    NARCIS (Netherlands)

    De Temmerman, G.; Dodson, J.; Linke, J.; Lisgo, S.; Pintsuk, G.; Porro, S.; Scarsbrook, G.

    2011-01-01

    Thick free-standing boron-doped diamonds were prepared by microwave plasma assisted chemical vapour deposition. Samples with a final thickness close to 5 mm and with lateral dimensions 25 x 25 mm were produced. The thermal shock resistance of the material was tested by exposure in the JUDITH

  13. Visible-light sensitization of boron-doped nanocrystalline diamond through non-covalent surface modification

    Czech Academy of Sciences Publication Activity Database

    Krýsová, Hana; Vlčková Živcová, Zuzana; Bartoň, Jan; Petrák, Václav; Nesladek, M.; Cígler, Petr; Kavan, Ladislav

    2015-01-01

    Roč. 17, č. 2 (2015), s. 1165-1172 ISSN 1463-9076 R&D Projects: GA ČR GA13-31783S Institutional support: RVO:61388955 ; RVO:61388963 ; RVO:68378271 Keywords : nanocrystallines * visible-light sensitization * boron-doped diamond Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 4.449, year: 2015

  14. Boron doping compensation of hydrogenated amorphous and polymorphous germanium thin films for infrared detection applications

    International Nuclear Information System (INIS)

    Moreno, M.; Delgadillo, N.; Torres, A.; Ambrosio, R.; Rosales, P.; Kosarev, A.; Reyes-Betanzo, C.; Hidalga-Wade, J. de la; Zuniga, C.; Calleja, W.

    2013-01-01

    In this work we have studied boron doping of hydrogenated amorphous germanium a-Ge:H and polymorphous germanium (pm-Ge:H) in low regimes, in order to compensate the material from n-type (due to oxygen contamination that commonly occurs during plasma deposition) to intrinsic, and in this manner improve the properties that are important for infrared (IR) detection, as activation energy (E a ) and temperature coefficient of resistance (TCR). Electrical, structural and optical characterization was performed on the films produced. Measurements of the temperature dependence of conductivity, room temperature conductivity (σ RT ), E a and current–voltage characteristics under IR radiation were performed in the compensated a-Ge:H and pm-Ge:H films. Our results demonstrate that, effectively, the values of E a , TCR and IR detection are improved on the a-Ge:H/pm-Ge:H films, using boron doping in low regimes, which results of interest for infrared detectors. - Highlights: • We reported boron doping compensation of amorphous and polymorphous germanium. • The films were deposited by plasma enhanced chemical vapor deposition. • The aim is to use the films as thermo-sensing elements in un-cooled microbolometers. • Those films have advantages over boron doped a-Si:H used in commercial detectors

  15. Boron-Doped Diamond Electrodes for the Electrochemical Oxidation and Cleavage of Peptides

    NARCIS (Netherlands)

    Roeser, Julien; Alting, Niels F. A.; Permentier, Hjalmar P.; Bruins, Andries P.; Bischoff, Rainer

    2013-01-01

    Electrochemical oxidation of peptides and proteins is traditionally performed on carbon-based electrodes. Adsorption caused by the affinity of hydrophobic and aromatic amino acids toward these surfaces leads to electrode fouling. We compared the performance of boron-doped diamond (BDD) and glassy

  16. Boron doping compensation of hydrogenated amorphous and polymorphous germanium thin films for infrared detection applications

    Energy Technology Data Exchange (ETDEWEB)

    Moreno, M., E-mail: mmoreno@inaoep.mx [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Delgadillo, N. [Universidad Autónoma de Tlaxcala, Av. Universidad No. 1, Z. P. 90006 Tlaxcala (Mexico); Torres, A. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Ambrosio, R. [Technology and Engineering Institute, Ciudad Juarez University UACJ, Av. Del Charro 450N, Z. P. 32310 Chihuahua (Mexico); Rosales, P.; Kosarev, A.; Reyes-Betanzo, C.; Hidalga-Wade, J. de la; Zuniga, C.; Calleja, W. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico)

    2013-12-02

    In this work we have studied boron doping of hydrogenated amorphous germanium a-Ge:H and polymorphous germanium (pm-Ge:H) in low regimes, in order to compensate the material from n-type (due to oxygen contamination that commonly occurs during plasma deposition) to intrinsic, and in this manner improve the properties that are important for infrared (IR) detection, as activation energy (E{sub a}) and temperature coefficient of resistance (TCR). Electrical, structural and optical characterization was performed on the films produced. Measurements of the temperature dependence of conductivity, room temperature conductivity (σ{sub RT}), E{sub a} and current–voltage characteristics under IR radiation were performed in the compensated a-Ge:H and pm-Ge:H films. Our results demonstrate that, effectively, the values of E{sub a}, TCR and IR detection are improved on the a-Ge:H/pm-Ge:H films, using boron doping in low regimes, which results of interest for infrared detectors. - Highlights: • We reported boron doping compensation of amorphous and polymorphous germanium. • The films were deposited by plasma enhanced chemical vapor deposition. • The aim is to use the films as thermo-sensing elements in un-cooled microbolometers. • Those films have advantages over boron doped a-Si:H used in commercial detectors.

  17. Boron-doped nanocrystalline diamond electrodes for neural interfaces: in vivo biocompatibility evaluation

    Czech Academy of Sciences Publication Activity Database

    Alcaide, M.; Taylor, Andrew; Fjorback, M.; Zachar, V.; Pennisi, C.P.

    2016-01-01

    Roč. 10, Mar (2016), 1-9, č. článku 87. ISSN 1662-453X Institutional support: RVO:68378271 Keywords : nanocrystalline diamond * neuroprosthetic interfaces * neural electrodes * boron-doped diamond * titanium nitride * foreign body reaction Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.566, year: 2016

  18. Electronic structures and three-dimensional effects of boron-doped carbon nanotubes

    International Nuclear Information System (INIS)

    Koretsune, Takashi; Saito, Susumu

    2008-01-01

    We study boron-doped carbon nanotubes by first-principles methods based on the density functional theory. To discuss the possibility of superconductivity, we calculate the electronic band structure and the density of states (DOS) of boron-doped (10,0) nanotubes by changing the boron density. It is found that the Fermi level density of states D(ε F ) increases upon lowering the boron density. This can be understood in terms of the rigid band picture where the one-dimensional van Hove singularity lies at the edge of the valence band in the DOS of the pristine nanotube. The effect of three-dimensionality is also considered by performing the calculations for bundled (10,0) nanotubes and boron-doped double-walled carbon nanotubes (10,0)/(19,0). From the calculation of the bundled nanotubes, it is found that interwall dispersion is sufficiently large to broaden the peaks of the van Hove singularity in the DOS. Thus, to achieve the high D(ε F ) using the bundle of nanotubes with single chirality, we should take into account the distance from each nanotube. In the case of double-walled carbon nanotubes, we find that the holes introduced to the inner tube by boron doping spread also on the outer tube, while the band structure of each tube remains almost unchanged.

  19. Electrochemical protein cleavage in a microfluidic cell with integrated boron doped diamond electrodes

    NARCIS (Netherlands)

    van den Brink, Floris Teunis Gerardus; Zhang, Tao; Ma, Liwei; Odijk, Mathieu; Olthuis, Wouter; Permentier, Hjalmar P.; Bischoff, Rainer P.H.; van den Berg, Albert

    2015-01-01

    We present a microfluidic electrochemical cell with integrated boron doped diamond (BDD) electrodes which is designed for high electrochemical conversion efficiencies. With our newest developments, we aim to exploit the benefits of BDD as a novel electrode material to conduct tyrosine- and

  20. Electrochemical impedance spectroscopy of polycrystalline boron doped diamond layers with hydrogen and oxygen terminated surface

    Czech Academy of Sciences Publication Activity Database

    Vlčková Živcová, Zuzana; Petrák, Václav; Frank, Otakar; Kavan, Ladislav

    2015-01-01

    Roč. 55, MAY 2015 (2015), s. 70-76 ISSN 0925-9635 R&D Projects: GA ČR GA13-31783S Institutional support: RVO:61388955 ; RVO:68378271 Keywords : Boron doped diamond * Electrochemical impedance spectroscopy * Aqueous electrolyte solution Subject RIV: CG - Electrochemistry Impact factor: 2.125, year: 2015

  1. First principle investigations on Boron doped Fe2VAl Heusler alloy

    International Nuclear Information System (INIS)

    Venkatesh, Ch.; Srivastava, S.K.; Rao, V.V.

    2014-01-01

    The role of atomic size of sp-element is investigated through theoretical calculations and basic experiments to understand the physical properties of Boron doped Fe 2 VAl alloy. The results of ab-initio calculations on ordered L2 1 structure of Fe 2 VAl 1-x B x (x=0, 0.5, 1) alloys have been compared to understand the role of sp-element size on the hybridization among their respective valance states. Interestingly, semi-metallic and paramagnetic like ground states were found in the Boron doped alloys in similar to Fe 2 VAl, eliminating the role of size of the doppent sp-atom. These calculations result in hybridization where the covalent distribution of valance states among the atoms is responsible to produce a finite pseudo-gap at the Fermi level. The observed features could be explained on the basis of covalent theory of magnetism in which an amount of spectral weight transfer occurs in the DOS spectrum among the same spin orbitals, leading to symmetric distribution of bonding and anti-bonding states. However, the obtained experimental findings on Boron doped alloys are in contrast with these calculations, indicating that experimentally the alloy formation into an ideal L2 1 lattice does not happen while doping with Boron. Further, the micro structural analysis shows Boron segregation across the grain boundaries that may form magnetic inhomogeneities in the lattice of Boron doped Fe 2 VAl alloys which preferably cause these experimental anomalies

  2. Factors influencing voltammetric reduction of 5-nitroquinoline at boron-doped diamond electrodes

    Czech Academy of Sciences Publication Activity Database

    Vosáhlová, J.; Zavázalová, J.; Petrák, Václav; Schwarzová-Pecková, K.

    2016-01-01

    Roč. 147, č. 1 (2016), s. 21-29 ISSN 0026-9247 Institutional support: RVO:68378271 Keywords : voltammetry * boron-doped diamond electrode * boron concentration * reduction * electrochemistry Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.282, year: 2016

  3. Plasma-induced high efficient synthesis of boron doped reduced graphene oxide for supercapacitors

    DEFF Research Database (Denmark)

    Li, Shaobo; Wang, Zhaofeng; Jiang, Hanmei

    2016-01-01

    In this work, we presented a novel route to synthesize boron doped reduced graphene oxide (rGO) by using the dielectric barrier discharge (DBD) plasma technology under ambient conditions. The doping of boron (1.4 at%) led to a significant improvement in the capacitance of rGO and supercapacitors ...

  4. Comprehensive device Simulation modeling of heavily irradiated silicon detectors at cryogenic temperatures

    CERN Document Server

    Moscatelli, F; MacEvoy, B; Hall, G; Passeri, D; Petasecca, M; Pignatel, Giogrio Umberto

    2004-01-01

    Radiation hardness is a critical design concern for present and future silicon detectors in high energy physics. Tracking systems at the CERN Large Hadron Collider (LHC) are expected to operate for ten years and to receive fast hadron fluences equivalent to 10/sup 15/cm /sup -2/ 1-MeV neutrons. Recently, low temperature operating conditions have been suggested as a means of suppressing the negative effects of radiation damage on detector charge collection properties. To investigate this effect, simulations have been carried out using the ISE-TCAD DESSIS device simulator. The so-called "three-level model" has been used. A comprehensive analysis of the influence of the V/sub 2/, C/sub i/O/sub i/ and V/sub 2/O capture cross sections on the effective doping concentration (N/sub eff/) as a function of temperature and fluence has been carried out. The capture cross sections have been varied in the range 10/sup -18/-10/sup -12/ cm/sup 2/. The simulated results are compared with charge collection spectra obtained wit...

  5. Reduced-pressure chemical vapor deposition of boron-doped Si and Ge layers

    International Nuclear Information System (INIS)

    Bogumilowicz, Y.; Hartmann, J.M.

    2014-01-01

    We have studied the in-situ boron (B) doping of germanium (Ge) and silicon (Si) in Reduced Pressure-Chemical Vapor Deposition. Three growth temperatures have been investigated for the B-doping of Ge: 400, 600 and 750 °C at a constant growth pressure of 13300 Pa (i.e. 100 Torr). The B concentration in the Ge:B epilayer increases linearly with the diborane concentration in the gaseous phase. Single-crystalline Ge:B layers with B concentrations in-between 9 ∙ 10 17 and 1 ∙ 10 20 cm −3 were achieved. For the in-situ B doping of Si at 850 °C, two dichlorosilane mass flow ratios (MFR) have been assessed: F[SiH 2 Cl 2 ]/F[H 2 ] = 0.0025 and F[SiH 2 Cl 2 ]/F[H 2 ] = 0.0113 at a growth pressure of 2660 Pa (i.e. 20 Torr). Linear boron incorporation with the diborane concentration in the gas phase has been observed and doping levels in-between 3.5 ∙ 10 17 and 1 ∙ 10 20 cm −3 were achieved. We almost kept the same ratio of B versus Si atoms in the gas phase and in the Si epilayer. By contrast, roughly half of the B atoms present in the gas phase were incorporated in the Ge:B layers irrespective of the growth temperature. X-Ray Diffraction (XRD) allowed us to extract from the angular position of the Ge:B layer diffraction peak the substitutional B concentration. Values close to the B concentrations obtained by 4-probe resistivity measurements were obtained. Ge:B layers were smooth (< 1 m root mean square roughness associated with 20 × 20 μm 2 Atomic Force Microscopy images). Only for high F[B 2 H 6 ]/F[GeH 4 ] MFR (3.2 10 −3 ) did the Ge:B layers became rough; they were however still mono-crystalline (XRD). Above this MFR value, Ge:B layers became polycrystalline. - Highlights: • Boron doping of germanium and silicon in Reduced Pressure-Chemical Vapor Deposition • Linear boron incorporation in Ge:B and Si:B with the diborane flow • Single-crystal Ge:B layers with B concentrations in-between 9 ∙ 10 17 and 1 ∙ 10 20 cm −3 • Single-crystal Si

  6. Mobility and Device Applications of Heavily Doped Silicon and Strained SILICON(1-X) Germanium(x) Layers

    Science.gov (United States)

    Carns, Timothy Keith

    With the advent of Si molecular beam epitaxy (Si -MBE), a significant amount of research has occurred to seek alternative high conductivity Si-based materials such as rm Si_{1-x}Ge_ {x} and delta-doped Si. These materials have brought improvements in device speeds and current drives with the added advantage of monolithic integration into Si VLSI circuits. The bulk of research in Si-based materials has been devoted to the implementation of strained rm Si_{1-x}Ge_{x} as the base layer of a rm Si_ {1-x}Ge_{x}/Si heterojunction bipolar transistor (HBT). Because of the valence band offset, the rm Si_{1-x}Ge _{x} layer can be heavily doped, leading to lower base sheet resistances and hence, improved speed performances. The Ge content in the base can also be graded to increase the drift field in the base. However, very few hole mobility measurements have been done in these strained layers, leading to limitations in device modeling and in understanding the transport behavior in this important material. In addition to rm Si_{1 -x}Ge_{x}, much potential also exists in using delta-doping in Si for improved conductivities over those of bulk Si. However, as of yet, delta-doped Si has received little attention. Therefore, this dissertation is dedicated to the investigation of both of these Si-based materials (strained rm Si_{1-x}Ge_{x } and delta-doped Si and rm Si_{1-x}Ge_ {x}) for the purpose of obtaining higher conductivities than comparably doped bulk Si. This work is divided into three parts to accomplish this objective. The first part is contained in Chapter 3 and is comprised of a comprehensive characterization of the hole mobility in compressively strained rm Si_{1 -x}Ge_{x}. Few results have been obtained prior to this research which has led to many inaccuracies in device modeling. The second part of this dissertation in Chapters 4 and 5 is devoted to the study of the mobility behavior in both boron and antimony delta-doped Si and rm Si_ {1-x}Ge_{x}. The important

  7. Contribution to the study, by magnetic resonance, of the properties of heavily doped silicon at low temperature

    International Nuclear Information System (INIS)

    Jerome, D.

    1965-10-01

    The magnetic properties of heavily doped silicon at low temperature have been studied in a range of concentration on either side of the Mott transition. For impurity densities less than that of the transition a magnetic double resonance method allows the exchange coupling between localized donors to be measured, and in addition the existence of paramagnetic centers (pairs of neutral and ionized donors) is demonstrated. The behaviour of the spin-lattice relaxation of 29 Ci is explained in terms of the dipolar coupling between nuclei and paramagnetic centers. In the range of concentration 10 16 -10 17 impurities/cm 3 , the concentration dependent relaxation of donors is studied experimentally. A theoretical explanation is proposed for the latter mechanism, the basis of which is the presence of ionized pairs of donors. At increasing impurity concentrations the electronic delocalization increases. For the concentration of 2.5 X 10 18 P/cm 3 the hyperfine coupling is responsible for the 29 Si relaxation. It is shown that the electron density has a very large maximum near the impurities in the metallic domain of concentrations. An estimation of the impurity band width (19 deg. K) is deduced from the measurement of the paramagnetic part of the electronic susceptibility at low temperature. (author) [fr

  8. Communication: Towards catalytic nitric oxide reduction via oligomerization on boron doped graphene

    Energy Technology Data Exchange (ETDEWEB)

    Cantatore, Valentina, E-mail: valcan@chalmers.se; Panas, Itai [Department of Chemistry and Chemical Engineering, Energy & Materials, Chalmers University of Technology, Gothenburg (Sweden)

    2016-04-21

    We use density functional theory to describe a novel way for metal free catalytic reduction of nitric oxide NO utilizing boron doped graphene. The present study is based on the observation that boron doped graphene and O—N=N—O{sup −} act as Lewis acid-base pair allowing the graphene surface to act as a catalyst. The process implies electron assisted N=N bond formation prior to N—O dissociation. Two N{sub 2} + O{sub 2} product channels, one of which favoring N{sub 2}O formation, are envisaged as outcome of the catalytic process. Besides, we show also that the N{sub 2} + O{sub 2} formation pathways are contrasted by a side reaction that brings to N{sub 3}O{sub 3}{sup −} formation and decomposition into N{sub 2}O + NO{sub 2}{sup −}.

  9. Enhanced field emission characteristics of boron doped diamond films grown by microwave plasma assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Koinkar, Pankaj M. [Center for International Cooperation in Engineering Education (CICEE), University of Tokushima, 2-1 Minami-josanjima-cho, Tokushima 770-8506 (Japan); Patil, Sandip S. [Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Kim, Tae-Gyu [Department of Nano System and Process Engineering, Pusan National University, 50 Cheonghak-ri, Samrangjin-eup, Miryang, Gyeongnam, Pusan 627-706 (Korea, Republic of); Yonekura, Daisuke [Department of Mechanical Engineering, University of Tokushima, 2-1 Minami-josanjima-cho, Tokushima 770-8506 (Japan); More, Mahendra A., E-mail: mam@physics.unipune.ac.in [Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Joag, Dilip S. [Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Murakami, Ri-ichi, E-mail: murakami@me.tokushima-u.ac.jp [Department of Mechanical Engineering, University of Tokushima, 2-1 Minami-josanjima-cho, Tokushima 770-8506 (Japan)

    2011-01-01

    Boron doped diamond films were synthesized on silicon substrates by microwave plasma chemical vapor deposition (MPCVD) technique. The effect of B{sub 2}O{sub 3} concentration varied from 1000 to 5000 ppm on the field emission characteristics was examined. The surface morphology and quality of films were characterized by scanning electron microscope (SEM) and Raman spectroscopy. The surface morphology obtained by SEM showed variation from facetted microcrystal covered with nanometric grains to cauliflower of nanocrystalline diamond (NCD) particles with increasing B{sub 2}O{sub 3} concentration. The Raman spectra confirm the formation of NCD films. The field emission properties of NCD films were observed to improve upon increasing boron concentration. The values of the onset field and threshold field are observed to be as low as 0.36 and 0.08 V/{mu}m, respectively. The field emission current stability investigated at the preset value of {approx}1 {mu}A is observed to be good, in each case. The enhanced field emission properties are attributed to the better electrical conductivity coupled with the nanometric features of the diamond films.

  10. Fabrication and characterization of n-type zinc oxide/p-type boron doped diamond heterojunction

    Czech Academy of Sciences Publication Activity Database

    Marton, M.; Mikolášek, M.; Bruncko, J.; Novotný, I.; Ižák, Tibor; Vojs, M.; Kozak, Halyna; Varga, Marián; Artemenko, Anna; Kromka, Alexander

    2015-01-01

    Roč. 66, č. 5 (2015), s. 277-281 ISSN 1335-3632 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk(CZ) 7AMB14SK024 Institutional support: RVO:68378271 Keywords : boron doped diamond * zinc oxide * Raman spectroscopy * bipolar heterostructure * wide-bandgap Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.407, year: 2015

  11. Plasma-induced highly efficient synthesis of boron doped reduced graphene oxide for supercapacitors.

    Science.gov (United States)

    Li, Shaobo; Wang, Zhaofeng; Jiang, Hanmei; Zhang, Limei; Ren, Jingzheng; Zheng, Mingtao; Dong, Lichun; Sun, Luyi

    2016-09-21

    In this work, we presented a novel route to synthesize boron doped reduced graphene oxide (rGO) by using the dielectric barrier discharge (DBD) plasma technology under ambient conditions. The doping of boron (1.4 at%) led to a significant improvement in the capacitance of rGO and supercapacitors based on the as-synthesized B-rGO exhibited an outstanding specific capacitance.

  12. Electrochemical Biosensor Based on Boron-Doped Diamond Electrodes with Modified Surfaces

    OpenAIRE

    Yu, Yuan; Zhou, Yanli; Wu, Liangzhuan; Zhi, Jinfang

    2012-01-01

    Boron-doped diamond (BDD) thin films, as one kind of electrode materials, are superior to conventional carbon-based materials including carbon paste, porous carbon, glassy carbon (GC), carbon nanotubes in terms of high stability, wide potential window, low background current, and good biocompatibility. Electrochemical biosensor based on BDD electrodes have attracted extensive interests due to the superior properties of BDD electrodes and the merits of biosensors, such as specificity, sensitiv...

  13. Metallization and superconductivity in a multizone doped semiconductor: boron-doped diamond

    International Nuclear Information System (INIS)

    Loktev, V.M.; Pogorelov, Yu.G.

    2005-01-01

    Within the framework of Anderson's s - d hybride model, metallization of a semiconductor at collectivization of impurity states is discussed. Taking in mind the description of boron-doped diamond CB x , the model is generalized for the case of the multiband initial spectrum and cluster acceptor states, due to the pairs of the nearest neighbor impurities ('impurity dumbbells'). The parameters of the calculated band of collective impurity states are compared to those observed in metallized and superconducting CB x

  14. Electrochemical treatment of wastewaters containing 4-chlororesorcinol using boron doped diamond anodes

    International Nuclear Information System (INIS)

    Nasr, B.; Abdelatif, G.

    2009-01-01

    The electrochemical oxidation of aqueous wastes polluted with 4-chlororesorcinol has been studied on boron-doped diamond electrodes on acidic medium. The voltammetric results showed that in the potential region where the supporting electrolyte is stable, reactions occur, resulting in the loss of activity due to electrode fouling. Galvanostatic electrolysis study showed that the oxidation of these wastes in single-compartment electrochemical flow cell with boron doped diamond anodes deal to the complete mineralization of the organics but is no indication of electrode fouling. Resorcinol, 1,2,4-trihydroxybenzene, benzoquinone, maleic, fumaric, and oxalic acids have been detected as soluble organics and chlorides (Cl - ) and hypochlorites (ClO - ) as mineral products during the electrolysis of 4-chlororesorcinol. The electrochemical oxidation of 4-chlororesorcinol consists of a sequence of steps: Release of Cl and/or hydroxylation of the aromatic ring; formation of quinonic compounds; oxidative opening of aromatic ring to form carboxylic acids; and oxidation of carboxylic acids to carbon dioxide. Both, direct oxidation at boron doped diamond surface and mediated oxidation by powerful oxidants electrogenerated from electrolyte oxidation at anode surface are involved in these stages. (author)

  15. Electrochemical reactivity at graphitic micro-domains on polycrystalline boron doped diamond thin-films electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Mahe, E. [LI2C CNRS/UMR 7612, Laboratoire d' Electrochimie, Universite Pierre-et-Marie Curie - case courrier 51, 4, Place Jussieu, 75252 Paris Cedex 05 (France); Devilliers, D. [LI2C CNRS/UMR 7612, Laboratoire d' Electrochimie, Universite Pierre-et-Marie Curie - case courrier 51, 4, Place Jussieu, 75252 Paris Cedex 05 (France); Comninellis, Ch. [Unite de Genie Electrochimique, Institut de sciences des procedes chimiques et biologiques, Ecole Polytechnique Federale de Lausanne, 1015, Lausanne (Switzerland)

    2005-04-01

    This paper deals with the electrochemical reactivity of boron doped diamond (BDD) electrodes. A comparative study has been carried out to show the influence of the presence of graphitic micro-domains upon the surface of these films. Those graphitic domains are sometimes present on as-grown boron doped diamond electrodes. The effect of doping a pure Csp{sup 3} diamond electrode is established by highly oriented pyrolytic graphite (HOPG) abrasion onto the diamond surface. In order to establish the effect of doping on a pure Csp{sup 3} diamond electrode, the amount of graphitic domains was increased by means of HOPG crystals grafted onto the BDD surface. Indeed that method allows the enrichment of the Csp{sup 2} contribution of the electrode. The presence of graphitic domains can be correlatively associated with the presence of kinetically active redox sites. The electrochemical reactivity of boron doped diamond electrodes shows a distribution of kinetic constants on the whole surface of the electrode corresponding to different active sites. In this paper, we have studied by cyclic voltammetry and electrochemical impedance spectroscopy the kinetics parameters of the ferri/ferrocyanide redox couple in KCl electrolyte. A method is proposed to diagnose the presence of graphitic domains on diamond electrodes, and an electrochemical 'pulse cleaning' procedure is proposed to remove them.

  16. The Immunosuppressive drug – Rapamycin – Electroanalytical Sensing Using Boron- Doped Diamond electrode

    International Nuclear Information System (INIS)

    Stanković, Dalibor M.; Kalcher, Kurt

    2015-01-01

    Graphical abstract: Display Omitted -- Abstract: This paper presents for the first time the study of electrochemical behavior of well known immunosuppressant drug – rapamycin (sirolimus) using boron-doped diamond electrode. Rapamycin provided single and oval-shaped oxidation peak at +1.1 V vs. Ag/AgCl electrode in Britton–Robinson buffer solution at pH 3 confirming highly irreversible behavior of analyte at boron-doped diamond electrode. A differential pulse voltammetry was used for quantification of tested drug under the optimum experimental conditions. The calibration curve was linear over the range from 0.5 to 19.5 μM (R 2 = 0.9976) with detection limit of 0.22 μM. Repeatability of ten successfully measurements of three different concentrations (5, 10 and 15 μM) was 2.5, 1.9 and 1,7 %, respectively. Influence of most common biomolecules presented in urine samples was evaluated. The suggested analytical methodology was successfully applied for determination of rapamycin in four urine samples with excellent recoveries. The developed approach could be beneficial in analysis of rapamycin in biological samples using boron-doped diamond electrode as up-to-date electrochemical sensor and could represent inexpensive analytical alternative to separation methods

  17. Boron doped ZnO embedded into reduced graphene oxide for electrochemical supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Alver, Ü., E-mail: ualver@ktu.edu.tr [Karadeniz Technical University, Dept. of Metallurgical and Materials Engineering, 61080 Trabzon (Turkey); Tanrıverdi, A. [Kahramanmaras Sutcu Imam University, Department of Physics, 46100 Kahramanmaraş (Turkey)

    2016-08-15

    Highlights: • Boron doped ZnO particles are fabricated and embedded into reduced graphene oxide (RGO) by hydrothermal method. • RGO/ZnO:B composites are used as electrodes for supercapacitors. • Presence of boron in RGO/ZnO composites caused increasing the stability and specific capacitance of electrodes. - Abstract: In this work, reduced graphene oxide/boron doped zinc oxide (RGO/ZnO:B) composites were fabricated by a hydrothermal process and their electrochemical properties were investigated as a function of dopant concentration. First, boron doped ZnO (ZnO:B) particles was fabricated with different boron concentrations (5, 10, 15 and 20 wt%) and then ZnO:B particles were embedded into RGO sheets. The physical properties of sensitized composites were characterized by XRD and SEM. Characterization indicated that the ZnO:B particles with plate-like structure in the composite were dispersed on graphene sheets. The electrochemical properties of the RGO/ZnO:B composite were investigated through cyclic voltammetry, galvanostatic charge/discharge measurements in a 6 M KOH electrolyte. Electrochemical measurements show that the specific capacitance values of RGO/ZnO:B electrodes increase with increasing boron concentration. RGO/ZnO:B composite electrodes (20 wt% B) display the specific capacitance as high as 230.50 F/g at 5 mV/s, which is almost five times higher than that of RGO/ZnO (52.71 F/g).

  18. Boron doped ZnO embedded into reduced graphene oxide for electrochemical supercapacitors

    International Nuclear Information System (INIS)

    Alver, Ü.; Tanrıverdi, A.

    2016-01-01

    Highlights: • Boron doped ZnO particles are fabricated and embedded into reduced graphene oxide (RGO) by hydrothermal method. • RGO/ZnO:B composites are used as electrodes for supercapacitors. • Presence of boron in RGO/ZnO composites caused increasing the stability and specific capacitance of electrodes. - Abstract: In this work, reduced graphene oxide/boron doped zinc oxide (RGO/ZnO:B) composites were fabricated by a hydrothermal process and their electrochemical properties were investigated as a function of dopant concentration. First, boron doped ZnO (ZnO:B) particles was fabricated with different boron concentrations (5, 10, 15 and 20 wt%) and then ZnO:B particles were embedded into RGO sheets. The physical properties of sensitized composites were characterized by XRD and SEM. Characterization indicated that the ZnO:B particles with plate-like structure in the composite were dispersed on graphene sheets. The electrochemical properties of the RGO/ZnO:B composite were investigated through cyclic voltammetry, galvanostatic charge/discharge measurements in a 6 M KOH electrolyte. Electrochemical measurements show that the specific capacitance values of RGO/ZnO:B electrodes increase with increasing boron concentration. RGO/ZnO:B composite electrodes (20 wt% B) display the specific capacitance as high as 230.50 F/g at 5 mV/s, which is almost five times higher than that of RGO/ZnO (52.71 F/g).

  19. Synthesis and characterization of p-type boron-doped IIb diamond large single crystals

    International Nuclear Information System (INIS)

    Li Shang-Sheng; Li Xiao-Lei; Su Tai-Chao; Jia Xiao-Peng; Ma Hong-An; Huang Guo-Feng; Li Yong

    2011-01-01

    High-quality p-type boron-doped IIb diamond large single crystals are successfully synthesized by the temperature gradient method in a china-type cubic anvil high-pressure apparatus at about 5.5 GPa and 1600 K. The morphologies and surface textures of the synthetic diamond crystals with different boron additive quantities are characterized by using an optical microscope and a scanning electron microscope respectively. The impurities of nitrogen and boron in diamonds are detected by micro Fourier transform infrared technique. The electrical properties including resistivities, Hall coefficients, Hall mobilities and carrier densities of the synthesized samples are measured by a four-point probe and the Hall effect method. The results show that large p-type boron-doped diamond single crystals with few nitrogen impurities have been synthesized. With the increase of quantity of additive boron, some high-index crystal faces such as {113} gradually disappear, and some stripes and triangle pits occur on the crystal surface. This work is helpful for the further research and application of boron-doped semiconductor diamond. (cross-disciplinary physics and related areas of science and technology)

  20. Boron-doped MnO{sub 2}/carbon fiber composite electrode for supercapacitor

    Energy Technology Data Exchange (ETDEWEB)

    Chi, Hong Zhong, E-mail: hzchi@hdu.edu.cn [College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Zhu, Hongjie [College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Gao, Linhui [Center of Materials Engineering, Zhejiang Sci-Tech University, Hangzhou 310018 (China)

    2015-10-05

    Highlights: • Interstitial ion in MnO{sub 2} lattice. • Porous film composed by interlocking worm-like nanostructure. • Boron-doped birnessite-type MnO{sub 2}/carbon fiber composite electrode. • Enhanced capacitive properties through nonmetal element doping. - Abstract: The boron-doped MnO{sub 2}/carbon fiber composite electrode has been prepared via in situ redox reaction between potassium permanganate and carbon fibers in the presence of boric acid. The addition of boron as dopant results in the increase of growth-rate of MnO{sub 2} crystal and the formation of worm-like nanostructure. Based on the analysis of binding energy, element boron incorporates into the MnO{sub 2} lattice through interstitial mode. The doped electrode with porous framework is beneficial to pseudocapacitive reaction and surface charge storage, leading to higher specific capacitance and superior rate capability. After experienced 1000 cycles, the boron-doped MnO{sub 2} still retain a higher specific capacitance by about 80% of its initial value. The fall in capacitance is blamed to be the combination of the formation of soluble Mn{sup 2+} and the absence of active site on the outer surface.

  1. Electrochemical reactivity at graphitic micro-domains on polycrystalline boron doped diamond thin-films electrodes

    International Nuclear Information System (INIS)

    Mahe, E.; Devilliers, D.; Comninellis, Ch.

    2005-01-01

    This paper deals with the electrochemical reactivity of boron doped diamond (BDD) electrodes. A comparative study has been carried out to show the influence of the presence of graphitic micro-domains upon the surface of these films. Those graphitic domains are sometimes present on as-grown boron doped diamond electrodes. The effect of doping a pure Csp 3 diamond electrode is established by highly oriented pyrolytic graphite (HOPG) abrasion onto the diamond surface. In order to establish the effect of doping on a pure Csp 3 diamond electrode, the amount of graphitic domains was increased by means of HOPG crystals grafted onto the BDD surface. Indeed that method allows the enrichment of the Csp 2 contribution of the electrode. The presence of graphitic domains can be correlatively associated with the presence of kinetically active redox sites. The electrochemical reactivity of boron doped diamond electrodes shows a distribution of kinetic constants on the whole surface of the electrode corresponding to different active sites. In this paper, we have studied by cyclic voltammetry and electrochemical impedance spectroscopy the kinetics parameters of the ferri/ferrocyanide redox couple in KCl electrolyte. A method is proposed to diagnose the presence of graphitic domains on diamond electrodes, and an electrochemical 'pulse cleaning' procedure is proposed to remove them

  2. Conductivity and superconductivity in heavily vacant diamond

    Directory of Open Access Journals (Sweden)

    S A Jafari

    2009-08-01

    Full Text Available   Motivated by the idea of impurity band superconductivity in heavily Boron doped diamond, we investigate the doping of various elements into diamond to address the question, which impurity band can offer a better DOS at the Fermi level. Surprisingly, we find that the vacancy does the best job in producing the largest DOS at the Fermi surface. To investigate the effect of disorder in Anderson localization of the resulting impurity band, we use a simple tight-binding model. Our preliminary study based on the kernel polynomial method shows that the impurity band is already localized at the concentration of 10-3. Around the vacancy concentration of 0.006 the whole spectrum of diamond becomes localized and quantum percolation takes place. Therefore to achieve conducting bands at concentrations on the scale of 5-10 percent, one needs to introduce correlations such as hopping among the vacancies .

  3. Synthesis, Characterization, and Evaluation of Boron-Doped Iron Oxides for the Photocatalytic Degradation of Atrazine under Visible Light

    Directory of Open Access Journals (Sweden)

    Shan Hu

    2012-01-01

    Full Text Available Photocatalytic degradation of atrazine by boron-doped iron oxides under visible light irradiation was investigated. In this work, boron-doped goethite and hematite were successfully prepared by sol-gel method with trimethylborate as boron precursor. The powders were characterized by XRD, UV-vis diffuse reflectance spectra, and porosimetry analysis. The results showed that boron doping could influence the crystal structure, enlarge the BET surface area, improve light absorption ability, and narrow their band-gap energy. The photocatalytic activity of B-doped iron oxides was evaluated in the degradation of atrazine under the visible light irradiation, and B-doped iron oxides showed higher atrazine degradation rate than that of pristine iron oxides. Particularly, B-doped goethite exhibited better photocatalytic activity than B-doped hematite.

  4. Improving the electrochemical properties of nanosized LiFePO4-based electrode by boron doping

    International Nuclear Information System (INIS)

    Trócoli, Rafael; Franger, Sylvain; Cruz, Manuel; Morales, Julián; Santos-Peña, Jesús

    2014-01-01

    Highlights: • Thermal treatment of boron phosphate with LiFePO 4 provides electrode materials with high performance in lithium half-cells: 160 mAh·g -1 (90% of theoretical capacity) under C/5 rate • The products are composites containing boron-modified LiFePO 4 , FePO 4 and an amorphous phase with ionic diffusion properties • The boron treatment affects textural, conductive and lithium diffusivity of the electrode material leading to higher performance • A limited boron-doping of the phospholivine structure is observed - Abstract: Electrode materials with homogeneous distribution of boron were obtained by heating mixtures of nanosized carbon-coated lithium iron phosphate and BPO 4 in 3-9% weight at 700 °C. The materials can be described as nanocomposites containing i) LiFePO 4 , possibly doped with a low amount of boron, ii) FePO 4 and iii) an amorphous layer based on Li 4 P 2 O 7 -derived material that surrounds the phosphate particles. The thermal treatment with BPO 4 also triggered changes in the carbon coating graphitic order. Galvanostatic and voltammetric studies in lithium half-cells showed smaller polarisation, higher capacity and better cycle life for the boron-doped composites. For instance, one of the solids, called B 6 -LiFePO 4 , provided close to 150 and 140 mAhg -1 (87% and 81% of theoretical capacity, respectively) under C/2.5 and C regimes after several cycles. Improved specific surface area, carbon graphitization, conductivity and lithium ion diffusivity in the boron-doped phospholivine network account for this excellent rate performance. The properties of an amorphous layer surrounding the phosphate particles also account for such higher performance

  5. Electrochemical oxidation of biological pretreated and membrane separated landfill leachate concentrates on boron doped diamond anode

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Bo, E-mail: 357436235@qq.com [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); Yu, Zhiming, E-mail: zhiming@csu.edu.cn [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Wei, Qiuping, E-mail: qiupwei@csu.edu.cn [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Long, HangYu, E-mail: 55686385@qq.com [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); Xie, Youneng, E-mail: 1187272844@qq.com [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); Wang, Yijia, E-mail: 503630433@qq.com [School of Materials Science and Engineering, Central South University, Changsha 410083 (China)

    2016-07-30

    Highlights: • High quality boron-doped diamond film electrodes were synthesized on Nb substrates. • Electrochemical oxidation on boron-doped diamond anode is an effective method for treating landfill leachate concentrates. • Optimal operating conditions for electrochemical oxidation of landfill leachate concentrates is determined. • 87.5% COD removal and 74.06% NH{sub 3}−N removal were achieved after 6 h treatment. - Abstract: In the present study, the high quality boron-doped diamond (BDD) electrodes with excellent electrochemical properties were deposited on niobium (Nb) substrates by hot filament chemical vapor deposition (HFCVD) method. The electrochemical oxidation of landfill leachate concentrates from disc tube reverse osmosis (DTRO) process over a BDD anode was investigated. The effects of varying operating parameters, such as current density, initial pH, flow velocity and cathode material on degradation efficiency were also evaluated following changes in chemical oxygen demand (COD) and ammonium nitrogen (NH{sub 3}−N). The instantaneous current efficiency (ICE) was used to appraise different operating conditions. As a result, the best conditions obtained were as follows, current density 50 mA cm{sup −2}, pH 5.16, flow velocity 6 L h{sup −1}. Under these conditions, 87.5% COD and 74.06% NH{sub 3}−N removal were achieved after 6 h treatment, with specific energy consumption of 223.2 kWh m{sup −3}. In short, these results indicated that the electrochemical oxidation with BDD/Nb anode is an effective method for the treatment of landfill leachate concentrates.

  6. Diamond anvil cells using boron-doped diamond electrodes covered with undoped diamond insulating layer

    Science.gov (United States)

    Matsumoto, Ryo; Yamashita, Aichi; Hara, Hiroshi; Irifune, Tetsuo; Adachi, Shintaro; Takeya, Hiroyuki; Takano, Yoshihiko

    2018-05-01

    Diamond anvil cells using boron-doped metallic diamond electrodes covered with undoped diamond insulating layers have been developed for electrical transport measurements under high pressure. These designed diamonds were grown on a bottom diamond anvil via a nanofabrication process combining microwave plasma-assisted chemical vapor deposition and electron beam lithography. The resistance measurements of a high-quality FeSe superconducting single crystal under high pressure were successfully demonstrated by just putting the sample and gasket on the bottom diamond anvil directly. The superconducting transition temperature of the FeSe single crystal was increased to up to 43 K by applying uniaxial-like pressure.

  7. Polymerisation occurrence in the anodic oxidation of phosphite on a boron-doped diamond electrode

    International Nuclear Information System (INIS)

    Petrucci, Elisabetta; Montanaro, Daniele; Merli, Carlo

    2008-01-01

    The electrogeneration of polymeric phosphorus compounds during the anodic oxidation of aqueous solutions of phosphites on a boron-doped diamond electrode has been studied. Although the main oxidation product is orthophosphate, the results indicate the simultaneous generation of short-chain and cyclic compounds containing two and three phosphorus atoms whose evolution has been followed by ion chromatography. The effect on the reaction yield of several operative parameters such as current density, pH, temperature and initial phosphite concentration has been investigated. Consistently with the data presented, a new process for the generation of polymeric phosphates is obtained

  8. Density functional theory prediction for diffusion of lithium on boron-doped graphene surface

    International Nuclear Information System (INIS)

    Gao Shuanghong; Ren Zhaoyu; Wan Lijuan; Zheng Jiming; Guo Ping; Zhou Yixuan

    2011-01-01

    The density functional theory (DFT) investigation shows that graphene has changed from semimetal to semiconductor with the increasing number of doped boron atoms. Lithium and boron atoms acted as charge contributors and recipients, which attracted to each other. Further investigations show that, the potential barrier for lithium diffusion on boron-doped graphene is higher than that of intrinsic graphene. The potential barrier is up to 0.22 eV when six boron atoms doped (B 6 C 26 ), which is the lowest potential barrier in all the doped graphene. The potential barrier is dramatically affected by the surface structure of graphene.

  9. Laser-excited photoemission spectroscopy study of superconducting boron-doped diamond

    Directory of Open Access Journals (Sweden)

    K. Ishizaka, R. Eguchi, S. Tsuda, T. Kiss, T. Shimojima, T. Yokoya, S. Shin, T. Togashi, S. Watanabe, C.-T. Chen, C.Q. Zhang, Y. Takano, M. Nagao, I. Sakaguchi, T. Takenouchi and H. Kawarada

    2006-01-01

    Full Text Available We have investigated the low-energy electronic state of boron-doped diamond thin film by the laser-excited photoemission spectroscopy. A clear Fermi-edge is observed for samples doped above the semiconductor–metal boundary, together with the characteristic structures at 150×n meV possibly due to the strong electron–lattice coupling effect. In addition, for the superconducting sample, we observed a shift of the leading edge below Tc indicative of a superconducting gap opening. We discuss the electron–lattice coupling and the superconductivity in doped diamond.

  10. Rectifying Properties of a Nitrogen/Boron-Doped Capped-Carbon-Nanotube-Based Molecular Junction

    International Nuclear Information System (INIS)

    Zhao Peng; Zhang Ying; Wang Pei-Ji; Zhang Zhong; Liu De-Sheng

    2011-01-01

    Based on the non-equilibrium Green's function method and first-principles density functional theory calculations, we investigate the electronic transport properties of a nitrogen/boron-doped capped-single-walled carbon-nanotube-based molecular junction. Obvious rectifying behavior is observed and it is strongly dependent on the doping site. The best rectifying performance can be carried out when the nitrogen/boron atom dopes at a carbon site in the second layer. Moreover, the rectifying performance can be further improved by adjusting the distance between the C 60 nanotube caps. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  11. Controlling physical and chemical bonding of polypyrrole to boron doped diamond by surface termination

    Czech Academy of Sciences Publication Activity Database

    Ukraintsev, Egor; Kromka, Alexander; Janssen, W.; Haenen, K.; Rezek, Bohuslav

    2013-01-01

    Roč. 8, č. 1 (2013), s. 17-26 ISSN 1452-3981 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA ČR GAP108/12/0996 Grant - others:EU FP7 Marie Curie ITN MATCON(XE) PITN-GA-2009-238201 Institutional support: RVO:68378271 Keywords : electrochemical growth * polypyrrole * boron doped diamond * scanning electron microscopy * Kelvin force microscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.956, year: 2013 http://www.electrochemsci.org/papers/vol8/80100017.pdf

  12. Polycrystalline boron-doped diamond electrodes for electrocatalytic and electrosynthetic applications.

    Science.gov (United States)

    Ivandini, Tribidasari A; Einaga, Yasuaki

    2017-01-24

    Boron-doped diamond (BDD) electrodes are recognized as being superior to other electrode materials due to their outstanding chemical and dimensional stability, their exceptionally low background current, the extremely wide potential window for water electrolysis that they have, and their excellent biocompatibility. However, whereas these properties have been utilized in the rapid development of electroanalytical applications, very few studies have been done in relation to their applications in electrocatalysis or electrosynthesis. In this report, following on from reports of the electrosynthesis of various products through anodic and cathodic reactions using BDD electrodes, the potential use of these electrodes in electrosynthesis is discussed.

  13. Textured surface boron-doped ZnO transparent conductive oxides on polyethylene terephthalate substrates for Si-based thin film solar cells

    International Nuclear Information System (INIS)

    Chen Xinliang; Lin Quan; Ni Jian; Zhang Dekun; Sun Jian; Zhao Ying; Geng Xinhua

    2011-01-01

    Textured surface boron-doped zinc oxide (ZnO:B) thin films were directly grown via low pressure metal organic chemical vapor deposition (LP-MOCVD) on polyethylene terephthalate (PET) flexible substrates at low temperatures and high-efficiency flexible polymer silicon (Si) based thin film solar cells were obtained. High purity diethylzinc and water vapors were used as source materials, and diborane was used as an n-type dopant gas. P-i-n silicon layers were fabricated at ∼ 398 K by plasma enhanced chemical vapor deposition. These textured surface ZnO:B thin films on PET substrates (PET/ZnO:B) exhibit rough pyramid-like morphology with high transparencies (T ∼ 80%) and excellent electrical properties (Rs ∼ 10 Ω at d ∼ 1500 nm). Finally, the PET/ZnO:B thin films were applied in flexible p-i-n type silicon thin film solar cells (device structure: PET/ZnO:B/p-i-n a-Si:H/Al) with a high conversion efficiency of 6.32% (short-circuit current density J SC = 10.62 mA/cm 2 , open-circuit voltage V OC = 0.93 V and fill factor = 64%).

  14. Sequential Electrodeposition of Platinum-Ruthenium at Boron-Doped Diamond Electrodes for Methanol Oxidation

    Directory of Open Access Journals (Sweden)

    Ileana González-González

    2011-01-01

    Full Text Available Sequential electrodeposition of Pt and Ru on boron-doped diamond (BDD films, in 0.5 M H2SO4 by cyclic voltammetry, has been prepared. The potential cycling, in the aqueous solutions of the respective metals, was between 0.00 and 1.00 V versus Ag/AgCl. The catalyst composites, Pt and PtRu, deposited on BDD film substrates, were tested for methanol oxidation. The modified diamond surfaces were also characterized by scanning electron microscopy-X-ray fluorescence-energy dispersive spectroscopy, X-ray photoelectron spectroscopy, and Auger electron spectroscopy. The scanning Auger electron spectroscopy mapping showed the ruthenium signal only in areas where platinum was electrodeposited. Ruthenium does not deposit on the oxidized diamond surface of the boron-doped diamond. Particles with 5–10% of ruthenium with respect to platinum exhibited better performance for methanol oxidation in terms of methanol oxidation peak current and chronoamperometric current stability. The electrogenerated •OH radicals on BDD may interact with Pt surface, participating in the methanol oxidation as shown in oxidation current and the shift in the peak position. The conductive diamond surface is a good candidate as the support for the platinum electrocatalyst, because it ensures catalytic activity, which compares with the used carbon, and higher stability under severe anodic and cathodic conditions.

  15. Boron doped ZnO embedded into reduced graphene oxide for electrochemical supercapacitors

    Science.gov (United States)

    Alver, Ü.; Tanrıverdi, A.

    2016-08-01

    In this work, reduced graphene oxide/boron doped zinc oxide (RGO/ZnO:B) composites were fabricated by a hydrothermal process and their electrochemical properties were investigated as a function of dopant concentration. First, boron doped ZnO (ZnO:B) particles was fabricated with different boron concentrations (5, 10, 15 and 20 wt%) and then ZnO:B particles were embedded into RGO sheets. The physical properties of sensitized composites were characterized by XRD and SEM. Characterization indicated that the ZnO:B particles with plate-like structure in the composite were dispersed on graphene sheets. The electrochemical properties of the RGO/ZnO:B composite were investigated through cyclic voltammetry, galvanostatic charge/discharge measurements in a 6 M KOH electrolyte. Electrochemical measurements show that the specific capacitance values of RGO/ZnO:B electrodes increase with increasing boron concentration. RGO/ZnO:B composite electrodes (20 wt% B) display the specific capacitance as high as 230.50 F/g at 5 mV/s, which is almost five times higher than that of RGO/ZnO (52.71 F/g).

  16. High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties

    Science.gov (United States)

    Yeom, Da-Young; Jeon, Woojin; Tu, Nguyen Dien Kha; Yeo, So Young; Lee, Sang-Soo; Sung, Bong June; Chang, Hyejung; Lim, Jung Ah; Kim, Heesuk

    2015-05-01

    For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000 °C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B2O3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.

  17. Electron transfer at boron-doped diamond electrodes modified by graphitic micro-domains

    Energy Technology Data Exchange (ETDEWEB)

    Mahe, E.; Devilliers, D. [Pierre et Marie Curie Univ., Paris (France). Electrochemistry Lab.; Comninellis, C. [Lausanne Ecole Polytechnique, Lausanne (Switzerland). Groupe de Genie Electrochimique

    2006-07-01

    Boron-doped (BDD) electrodes have been used in electrolysis procedures for the last 10 years. The mechanical stability of the electrode, its large electrochemical window and its low capacitive current place this new electrode material as an alternative for replacing more costly or toxic materials such as mercury. However, the ferri/ferrocyanide system of boron-doped electrodes has shown contradictory results in the literature. This study proposed a cathodic pre-treatment which relied on the presence of residual graphitic domains formed during the preparation of the BDD film. An experiment was conducted in which the doping procedure was used to control the amount of graphitic phase on the electrode with highly oriented pyrolytic graphite (HOPG) grafted on the BDD surface. Surface characterization with Raman spectroscopy and Scanning Electron Microscopy (SEM) was then carried out using cyclic voltammetry and electrochemical impedance spectroscopy. The electroanalytical determination of the amount of graphitic micro-domains was described and a pulse procedure was proposed which obtained a reproducible surface state. 2 refs., 2 figs.

  18. Boron-doped hydrogenated Al{sub 3} clusters: A material for hydrogen storage

    Energy Technology Data Exchange (ETDEWEB)

    Muz, İskender, E-mail: iskender.muz@nevsehir.edu.tr [Faculty of Education, Department of Science Education, Nevsehir Haci Bektas Veli University, 50300, Nevsehir (Turkey); Atiş, Murat [Kayseri Vocational School, Electricity and Energy Department, Erciyes University, 38300, Kayseri (Turkey)

    2016-05-15

    The energetic and structural stabilities of Al{sub 3}BH{sub 2n} (n = 0–6) clusters are investigated using ab initio calculations. Structural isomers are found using the stochastic search method to search for minima structures, followed by B3LYP optimizations; single-point CCSD(T) calculations are performed to compute relative energies. Chemical bonding analysis is also performed using the adaptive natural density partitioning method to investigate the chemical bonding in the clusters and to elucidate their structural evolution. Our results and analyses indicate that the stability of the boron-doped hydrogenated Al{sub 3} clusters increases as more hydrogen molecules are adsorbed, whereas the H{sub 2} loss energy decreases. The results are in good agreement with available theoretical findings. - Highlights: • The boron-doped hydrogenated Al{sub 3} clusters are generated using stochastic search method. • The energetic and structural stabilities are investigated in detail. • The chemical bonding analysis is performed by using AdNDP analysis. • The doping by boron allows development of better aluminum-based metal hydrides.

  19. Electrochemical mineralization pathway of quinoline by boron-doped diamond anodes.

    Science.gov (United States)

    Wang, Chunrong; Ma, Keke; Wu, Tingting; Ye, Min; Tan, Peng; Yan, Kecheng

    2016-04-01

    Boron-doped diamond anodes were selected for quinoline mineralization, and the resulting intermediates, phenylpropyl aldehyde, phenylpropionic acid, and nonanal were identified and followed during quinoline oxidation by gas chromatography-mass spectrometry and high-performance liquid chromatography. The evolutions of formic acid, acetic acid, oxalic acid, NO2(-), NO3(-), and NH4(+) were quantified. A new reaction pathway for quinoline mineralization by boron-doped diamond anodes has been proposed, where the pyridine ring in quinoline is cleaved by a hydroxyl radical giving phenylpropyl aldehyde and NH4(+). Phenylpropyl aldehyde is quickly oxidized into phenylpropionic acid, and the benzene ring is cleaved giving nonanal. This is further oxidized to formic acid, acetic acid, and oxalic acid. Finally, these organic intermediates are mineralized to CO2 and H2O. NH4(+) is also oxidized to NO2(-) and on to NO3(-). The results will help to gain basic reference for clearing intermediates and their toxicity. Copyright © 2016 Elsevier Ltd. All rights reserved.

  20. Density functional theory investigation of oxygen interaction with boron-doped graphite

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Juan; Wang, Chen [State Key Lab of New Ceramic and Fine Processing, Institute of Nuclear and New Energy Technology, Tsinghua University, Beijing 100084 (China); Liang, Tongxiang, E-mail: txliang@tsinghua.edu.cn [State Key Lab of New Ceramic and Fine Processing, Institute of Nuclear and New Energy Technology, Tsinghua University, Beijing 100084 (China); Lai, Wensheng [Advanced Material Laboratory, School of Materials Science & Engineering, Tsinghua University, Beijing, 100084 (China)

    2016-12-30

    Highlights: • Density-functional approach is applied to study the interaction of oxygen with boron-doped graphite. • Adsorption and diffusion of oxygen atoms on boron doped graphite surfaces are studied. • Recombination of oxygen is investigated by ER and LH mechanisms. • Low boron concentration facilitates O{sub 2} formation while high boron loading inhibits the recombination. • The presence of B−B bonds due to boron accumulation makes it impossible for oxygen recombination. - Abstract: Boron inserted as impurity by substitution of carbon atoms in graphite is known to change (improve or deteriorate) oxidation resistance of nuclear graphite, but the reason for both catalytic and inhibiting oxidation is still uncertain. As a first step, this work is more specially devoted to the adsorption and diffusion of oxygen atoms on the surface and related to the problem of oxygen retention on the pure and boron-containing graphite surfaces. Adsorption energies and energy barriers associated to the diffusion for molecular oxygen recombination are calculated in the density functional theory framework. The existence of boron modifies the electronic structure of the surface, which results in an increase of the adsorption energy for O. However, low boron loading makes it easier for the recombination into molecular oxygen. For high boron concentration, it induces a better O retention capability in graphite because the presence of B-B bonds decreases recombination of the adsorbed oxygen atoms. A possible explanation for both catalytic and inhibiting effects of boron in graphite is proposed.

  1. High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties.

    Science.gov (United States)

    Yeom, Da-Young; Jeon, Woojin; Tu, Nguyen Dien Kha; Yeo, So Young; Lee, Sang-Soo; Sung, Bong June; Chang, Hyejung; Lim, Jung Ah; Kim, Heesuk

    2015-05-05

    For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000 °C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B2O3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.

  2. Electrochemical Incineration of Phenolic Compounds from the Hydrocarbon Industry Using Boron-Doped Diamond Electrodes

    Directory of Open Access Journals (Sweden)

    Alejandro Medel

    2012-01-01

    Full Text Available Electrochemical incineration using boron-doped diamond electrodes was applied to samples obtained from a refinery and compared to the photo-electro-Fenton process in order to selectively eliminate the phenol and phenolic compounds from a complex matrix. Due to the complex chemical composition of the sample, a pretreatment to the sample in order to isolate the phenolic compounds was applied. The effects of the pretreatment and of pH on the degradation of the phenolic compounds were evaluated. The results indicate that the use of a boron-doped diamond electrode in an electrochemical incineration process mineralizes 99.5% of the phenolic sample content. Working in acidic medium (pH = 1, and applying 2 A at 298 K under constant stirring for 2 hours, also results in the incineration of the reaction intermediates reflected by 97% removal of TOC. In contrast, the photo-electro-Fenton process results in 99.9% oxidation of phenolic compounds with only a 25.69% removal of TOC.

  3. Study of the passivation mechanisms of boron doped diamond using the Amplitude Modulated Step Scan Fourier Transform Photocurrent Spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Kociniewski, T.; Remeš, Zdeněk; Mer, C.; Nesládek, Miloš; Habka, N.; Barjon, J.; Jomard, F.; Chevallier, J.; Omnès, F.; Tromson, D.; Bergonzo, P.

    2009-01-01

    Roč. 18, 5-8 (2009), s. 827-830 ISSN 0925-9635 Institutional research plan: CEZ:AV0Z10100521 Keywords : AMFTPS * DBP * boron doped diamond * passivation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.822, year: 2009

  4. Green synthesis of boron doped graphene and its application as high performance anode material in Li ion battery

    Energy Technology Data Exchange (ETDEWEB)

    Sahoo, Madhumita; Sreena, K.P.; Vinayan, B.P.; Ramaprabhu, S., E-mail: ramp@iitm.ac.in

    2015-01-15

    Graphical abstract: Boron doped graphene (B-G), synthesized by simple hydrogen induced reduction technique using boric acid as boron precursor, have more uneven surface as a result of smaller bonding distance of boron compared to carbon, showed high capacity and high rate capability compared to pristine graphene as an anode material for Li ion battery application. - Abstract: The present work demonstrates a facile route for the large-scale, catalyst free, and green synthesis approach of boron doped graphene (B-G) and its use as high performance anode material for Li ion battery (LIB) application. Boron atoms were doped into graphene framework with an atomic percentage of 5.93% via hydrogen induced thermal reduction technique using graphite oxide and boric acid as precursors. Various characterization techniques were used to confirm the boron doping in graphene sheets. B-G as anode material shows a discharge capacity of 548 mAh g{sup −1} at 100 mA g{sup −1} after 30th cycles. At high current density value of 1 A g{sup −1}, B-G as anode material enhances the specific capacity by about 1.7 times compared to pristine graphene. The present study shows a simplistic way of boron doping in graphene leading to an enhanced Li ion adsorption due to the change in electronic states.

  5. Green synthesis of boron doped graphene and its application as high performance anode material in Li ion battery

    International Nuclear Information System (INIS)

    Sahoo, Madhumita; Sreena, K.P.; Vinayan, B.P.; Ramaprabhu, S.

    2015-01-01

    Graphical abstract: Boron doped graphene (B-G), synthesized by simple hydrogen induced reduction technique using boric acid as boron precursor, have more uneven surface as a result of smaller bonding distance of boron compared to carbon, showed high capacity and high rate capability compared to pristine graphene as an anode material for Li ion battery application. - Abstract: The present work demonstrates a facile route for the large-scale, catalyst free, and green synthesis approach of boron doped graphene (B-G) and its use as high performance anode material for Li ion battery (LIB) application. Boron atoms were doped into graphene framework with an atomic percentage of 5.93% via hydrogen induced thermal reduction technique using graphite oxide and boric acid as precursors. Various characterization techniques were used to confirm the boron doping in graphene sheets. B-G as anode material shows a discharge capacity of 548 mAh g −1 at 100 mA g −1 after 30th cycles. At high current density value of 1 A g −1 , B-G as anode material enhances the specific capacity by about 1.7 times compared to pristine graphene. The present study shows a simplistic way of boron doping in graphene leading to an enhanced Li ion adsorption due to the change in electronic states

  6. Boron-doped Diamond Electrodes: Electrochemical, Atomic Force Microscopy and Raman Study towards Corrosion-modifications at Nanoscale

    Czech Academy of Sciences Publication Activity Database

    Kavan, Ladislav; Vlčková Živcová, Zuzana; Petrák, Václav; Frank, Otakar; Janda, Pavel; Tarábková, Hana; Nesladek, M.; Mortet, Vincent

    2015-01-01

    Roč. 179, OCT 2015 (2015), s. 626-636 ISSN 0013-4686 R&D Projects: GA ČR GA13-31783S Institutional support: RVO:61388955 ; RVO:68378271 Keywords : Raman spectroelectrochemistry * atomic force microscopy * boron doped diamond Subject RIV: CG - Electrochemistry Impact factor: 4.803, year: 2015

  7. Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films

    DEFF Research Database (Denmark)

    Meijs, Suzan; McDonald, Matthew; Sørensen, Søren

    2015-01-01

    The aim of this study was to investigate the feasibility of depositing a thin layer of boron-doped nanocrystalline diamond (B-NCD) on titanium nitride (TiN) coated electrodes and the effect this has on charge injection properties. The charge storage capacity increased by applying the B-NCD film...

  8. Structural and mechanical characterization of boron doped biphasic calcium phosphate produced by wet chemical method and subsequent thermal treatment

    Energy Technology Data Exchange (ETDEWEB)

    Albayrak, Onder, E-mail: albayrakonder@mersin.edu.tr

    2016-03-15

    In the current study, boron doped biphasic calcium phosphate bioceramics consisting of a mixture of boron doped hydroxyapatite (BHA) and beta tricalcium phosphate (β-TCP) of varying BHA/β-TCP ratios were obtained after sintering stage. The effects of varying boron contents and different sintering temperatures on the BHA/β-TCP ratios and on the sinterability of the final products were investigated. Particle sizes and morphologies of the obtained precipitates were determined using SEM. XRD and FTIR investigation were conducted to detect the boron formation in the structure of HA and quantitative analysis was performed to determine the BHA/β-TCP ratio before and after sintering stage. In order to determine the sinterability of the obtained powders, pellets were prepared and sintered; the rates of densification were calculated and obtained results were correlated by SEM images. Also Vickers microhardness values of the sintered samples were determined. The experimental results verified that boron doped hydroxyapatite powders were obtained after sintering stage and the structure consists of a mixture of BHA and β-TCP. As the boron content used in the precipitation stage increases, β-TCP content of the BHA/β-TCP ratio increases but sinterability, density and microhardness deteriorate. As the sintering temperature increases, β-TCP content, density and microhardness of the samples increase and sinterability improves. - Highlights: • This is the first paper about boron doped biphasic calcium phosphate bioceramics. • Boron doping affects the structural and mechanical properties. • BHA/β-TCP ratio can be adjustable with boron content and sintering temperature.

  9. Degradation of creatinine using boron-doped diamond electrode: Statistical modeling and degradation mechanism.

    Science.gov (United States)

    Zhang, Zhefeng; Xian, Jiahui; Zhang, Chunyong; Fu, Degang

    2017-09-01

    This study investigated the degradation performance and mechanism of creatinine (a urine metabolite) with boron-doped diamond (BDD) anodes. Experiments were performed using a synthetic creatinine solution containing two supporting electrolytes (NaCl and Na 2 SO 4 ). A three-level central composite design was adopted to optimize the degradation process, a mathematical model was thus constructed and used to explore the optimum operating conditions. A maximum mineralization percentage of 80% following with full creatinine removal had been achieved within 120 min of electrolysis, confirming the strong oxidation capability of BDD anodes. Moreover, the results obtained suggested that supporting electrolyte concentration should be listed as one of the most important parameters in BDD technology. Lastly, based on the results from quantum chemistry calculations and LC/MS analyses, two different reaction pathways which governed the electrocatalytic oxidation of creatinine irrespective of the supporting electrolytes were identified. Copyright © 2017 Elsevier Ltd. All rights reserved.

  10. Fabrication of porous boron-doped diamond on SiO.sub.2./sub. fiber templates

    Czech Academy of Sciences Publication Activity Database

    Petrák, Václav; Vlčková Živcová, Zuzana; Krýsová, Hana; Frank, Otakar; Zukal, Arnošt; Klimša, Ladislav; Kopeček, Jaromír; Taylor, Andrew; Kavan, Ladislav; Mortet, Vincent

    2017-01-01

    Roč. 114, Jan (2017), s. 457-464 ISSN 0008-6223 R&D Projects: GA MŠk LO1409; GA MŠk LM2015088; GA ČR GA13-31783S Grant - others:FUNBIO(XE) CZ.2.16/3.1.00/21568; AV ČR(CZ) Fellowship J. E. Purkyně Institutional support: RVO:68378271 ; RVO:61388955 Keywords : boron-doped diamond * electrochemical properties Subject RIV: BM - Solid Matter Physics ; Magnetism; CG - Electrochemistry (UFCH-W) OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.); Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis) (UFCH-W) Impact factor: 6.337, year: 2016

  11. Electrochemical degradation of some herbicides in aqueous solution on boron doped diamond anodes

    International Nuclear Information System (INIS)

    Zaouak, Amira; Dachraoui, Mohamed; Matoussi, Fatma

    2009-01-01

    Bifenox(a) and acifluorfen(b), respectively (Methyl 5-(2,4-dichlorophenoxy)-2-nitrobenzoate and 5-(2-Chloro-4-trifluoro methylphenoxy)-2-nitrobenzoic acid, are two highly toxic herbicides of the diphenyl ether class. They are widely used in agriculture. Their electrochemical oxidation behaviour is studied by cyclic voltammetry in various media with different electrodes. When galvanostatic electrolysis is realized on Boron Doped Diamond electrode (BDD) we observe that the studied contaminants undergo an almost complete degradation due to hydroxy radical action as commonly suggested. The rate of the mineralization is followed by spectrophotometric analysis and COD measurements. The optimization of this advanced oxidation process is studied as a function of the current density. It shows that the best results are obtained with low current densities. The obtained COD abatement values are superior to 90 pour cent.

  12. New Pathways and Metrics for Enhanced, Reversible Hydrogen Storage in Boron-Doped Carbon Nanospaces

    Energy Technology Data Exchange (ETDEWEB)

    Pfeifer, Peter [University of Missouri; Wexler, Carlos [University of Missouri; Hawthorne, M. Frederick [University of Missouri; Lee, Mark W. [University of Missouri; Jalistegi, Satish S. [University of Missouri

    2014-08-14

    This project, since its start in 2007—entitled “Networks of boron-doped carbon nanopores for low-pressure reversible hydrogen storage” (2007-10) and “New pathways and metrics for enhanced, reversible hydrogen storage in boron-doped carbon nanospaces” (2010-13)—is in support of the DOE's National Hydrogen Storage Project, as part of the DOE Hydrogen and Fuel Cells Program’s comprehensive efforts to enable the widespread commercialization of hydrogen and fuel cell technologies in diverse sectors of the economy. Hydrogen storage is widely recognized as a critical enabling technology for the successful commercialization and market acceptance of hydrogen powered vehicles. Storing sufficient hydrogen on board a wide range of vehicle platforms, at energy densities comparable to gasoline, without compromising passenger or cargo space, remains an outstanding technical challenge. Of the main three thrust areas in 2007—metal hydrides, chemical hydrogen storage, and sorption-based hydrogen storage—sorption-based storage, i.e., storage of molecular hydrogen by adsorption on high-surface-area materials (carbons, metal-organic frameworks, and other porous organic networks), has emerged as the most promising path toward achieving the 2017 DOE storage targets of 0.055 kg H2/kg system (“5.5 wt%”) and 0.040 kg H2/liter system. The objective of the project is to develop high-surface-area carbon materials that are boron-doped by incorporation of boron into the carbon lattice at the outset, i.e., during the synthesis of the material. The rationale for boron-doping is the prediction that boron atoms in carbon will raise the binding energy of hydro- gen from 4-5 kJ/mol on the undoped surface to 10-14 kJ/mol on a doped surface, and accordingly the hydro- gen storage capacity of the material. The mechanism for the increase in binding energy is electron donation from H2 to electron-deficient B atoms, in the form of sp2 boron-carbon bonds. Our team is proud to have

  13. Covalent modification of boron-doped diamond electrodes with an imidazolium-based ionic liquid

    Energy Technology Data Exchange (ETDEWEB)

    Wang Mei [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France); School of Materials Science and Engineering, Shandong University, 19723 Jingshi Road, Jinan, Shandong Province (China); Schneider, Amene [Austrian Centre of Competence for Tribology, Viktor Kaplan Strasse 2, 2700, Wiener Neustadt (Austria); Niedziolka-Joensson, Joanna; Marcon, Lionel [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France); Ghodbane, Slimane; Steinmueller-Nethl, Doris [Rho-BeSt Coating GmbH, Exlgasse 20a, 6020 Innsbruck (Austria); Li Musen [School of Materials Science and Engineering, Shandong University, 19723 Jingshi Road, Jinan, Shandong Province (China); Boukherroub, Rabah [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France); Szunerits, Sabine, E-mail: sabine.szunerits@iri.univ-lille1.f [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France)

    2010-02-01

    An ionic liquid (IL, 1-(methylcarboxylic acid)-3-octylimidazolium-bis (trifluoromethylsulfonyl)imide) was covalently coupled onto a boron-doped diamond (BDD) surface through an esterification reaction. The resulting surface was characterized by X-ray photoelectron spectroscopy, water contact angle and electrochemical measurements. Selective electron transfer towards positively and negatively charged redox species was recorded. While the presence of Fe(CN){sub 6}{sup 4-} could be detected on the IL-modified BDD interface, no surface-immobilized Ru(NH{sub 3}){sub 6}{sup 3+} was recorded. The IL-modified BDD electrode showed in addition changes in surface wettability when immersed into aqueous solution containing different anions.

  14. Chemical Modification of Boron-Doped Diamond Electrodes for Applications to Biosensors and Biosensing.

    Science.gov (United States)

    Svítková, Jana; Ignat, Teodora; Švorc, Ľubomír; Labuda, Ján; Barek, Jiří

    2016-05-03

    Boron-doped diamond (BDD) is a prospective electrode material that possesses many exceptional properties including wide potential window, low noise, low and stable background current, chemical and mechanical stability, good biocompatibility, and last but not least exceptional resistance to passivation. These characteristics extend its usability in various areas of electrochemistry as evidenced by increasing number of published articles over the past two decades. The idea of chemically modifying BDD electrodes with molecular species attached to the surface for the purpose of creating a rational design has found promising applications in the past few years. BDD electrodes have appeared to be excellent substrate materials for various chemical modifications and subsequent application to biosensors and biosensing. Hence, this article presents modification strategies that have extended applications of BDD electrodes in electroanalytical chemistry. Different methods and steps of surface modification of this electrode material for biosensing and construction of biosensors are discussed.

  15. Electrolyte influence on the Cu nanoparticles electrodeposition onto boron doped diamond electrode

    International Nuclear Information System (INIS)

    Matsushima, Jorge Tadao; Santos, Laura Camila Diniz; Couto, Andrea Boldarini; Baldan, Mauricio Ribeiro; Ferreira, Neidenei Gomes

    2012-01-01

    This paper presents the electrolyte influence on deposition and dissolution processes of Cu nanoparticles on boron doped diamond electrodes (DDB). Morphological, structural and electrochemical analysis showed BDD films with good reproducibility, quality and reversible in a specific redox system. Electrodeposition of Cu nanoparticles on DDB electrodes in three different solutions was influenced by pH and ionic strength of the electrolytic medium. Analyzing the process as function of the scan rate, it was verified a better efficiency in 0,5 mol L -1 Na 2 SO 4 solution. Under the influence of the pH and ionic strength, Cu nanoparticles on DDB may be obtained with different morphologies and it was important for defining the desired properties. (author)

  16. Electrochemical and morphological characterization of gold nanoparticles deposited on boron-doped diamond electrode

    Energy Technology Data Exchange (ETDEWEB)

    Limat, Meriadec; El Roustom, Bahaa [Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Chemical Sciences and Engineering, CH-1015 Lausanne (Switzerland); Jotterand, Henri [Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Physics of the Complex Matter, CH-1015 Lausanne (Switzerland); Foti, Gyoergy [Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Chemical Sciences and Engineering, CH-1015 Lausanne (Switzerland)], E-mail: gyorgy.foti@epfl.ch; Comninellis, Christos [Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Chemical Sciences and Engineering, CH-1015 Lausanne (Switzerland)

    2009-03-30

    A novel two-step method was employed to synthesize gold nanoparticles dispersed on boron-doped diamond (BDD) electrode. It consisted of sputter deposition at ambient temperature of maximum 15 equivalent monolayers of gold, followed by a heat treatment in air at 600 deg. C. Gold nanoparticles with an average diameter between 7 and 30 nm could be prepared by this method on polycrystalline BDD film electrode. The obtained Au/BDD composite electrode appeared stable under conditions of electrochemical characterization performed using ferri-/ferrocyanide and benzoquinone/hydroquinone redox couples in acidic medium. The electrochemical behavior of Au/BDD was compared to that of bulk Au and BDD electrodes. Finally, the Au/BDD composite electrode was regarded as an array of Au microelectrodes dispersed on BDD substrate.

  17. Fabrication of cone-shaped boron doped diamond and gold nanoelectrodes for AFM-SECM

    Energy Technology Data Exchange (ETDEWEB)

    Avdic, A; Lugstein, A; Bertagnolli, E [Solid State Electronics Institute, Vienna University of Technology, Floragasse 7, 1040 Vienna (Austria); Wu, M; Gollas, B [Competence Centre for Electrochemical Surface Technology, Viktor Kaplan Strasse 2, 2700 Wiener Neustadt (Austria); Pobelov, I; Wandlowski, T [Department of Chemistry and Biochemistry, University of Bern, Freiestrasse 3, 3012 Bern (Switzerland); Leonhardt, K; Denuault, G, E-mail: alois.lugstein@tuwien.ac.at [School of Chemistry, University of Southampton, Highfield, Southampton SO17 1BJ (United Kingdom)

    2011-04-08

    We demonstrate a reliable microfabrication process for a combined atomic force microscopy (AFM) and scanning electrochemical microscopy (SECM) measurement tool. Integrated cone-shaped sensors with boron doped diamond (BDD) or gold (Au) electrodes were fabricated from commercially available AFM probes. The sensor formation process is based on mature semiconductor processing techniques, including focused ion beam (FIB) machining, and highly selective reactive ion etching (RIE). The fabrication approach preserves the geometry of the original AFM tips resulting in well reproducible nanoscaled sensors. The feasibility and functionality of the fully featured tips are demonstrated by cyclic voltammetry, showing good agreement between the measured and calculated currents of the cone-shaped AFM-SECM electrodes.

  18. Preparation and reactivity of carboxylic acid-terminated boron-doped diamond electrodes

    International Nuclear Information System (INIS)

    Niedziolka-Joensson, Joanna; Boland, Susan; Leech, Donal; Boukherroub, Rabah; Szunerits, Sabine

    2010-01-01

    The paper reports on the formation of carboxy-terminated boron-doped diamond (BDD) electrodes. The carboxylic acid termination was prepared in a controlled way by reacting photochemically oxidized BDD with succinic anhydride. The resulting interface was readily employed for the linking of an amine-terminated ligand such as an osmium complex bearing an amine terminal group. The interfaces were characterized using X-ray photoelectron spectroscopy (XPS) and cyclic voltammetry (CV). Contact angle measurements were used to follow the changes in surface wetting properties due to surface functionalization. The chemical reactivity of the carboxyl-terminated BDD was investigated by covalent coupling of the acid groups to an amine-terminated osmium complex.

  19. Electrochemical Biosensor Based on Boron-Doped Diamond Electrodes with Modified Surfaces

    Directory of Open Access Journals (Sweden)

    Yuan Yu

    2012-01-01

    Full Text Available Boron-doped diamond (BDD thin films, as one kind of electrode materials, are superior to conventional carbon-based materials including carbon paste, porous carbon, glassy carbon (GC, carbon nanotubes in terms of high stability, wide potential window, low background current, and good biocompatibility. Electrochemical biosensor based on BDD electrodes have attracted extensive interests due to the superior properties of BDD electrodes and the merits of biosensors, such as specificity, sensitivity, and fast response. Electrochemical reactions perform at the interface between electrolyte solutions and the electrodes surfaces, so the surface structures and properties of the BDD electrodes are important for electrochemical detection. In this paper, the recent advances of BDD electrodes with different surfaces including nanostructured surface and chemically modified surface, for the construction of various electrochemical biosensors, were described.

  20. Electroreduction of CO{sub 2} using copper-deposited on boron-doped diamond (BDD)

    Energy Technology Data Exchange (ETDEWEB)

    Panglipur, Hanum Sekar; Ivandini, Tribidasari A., E-mail: ivandini.tri@sci.ui.ac.id [Department of Chemistry, FMIPA, Universitas Indonesia, Kampus UI Depok (Indonesia); Einaga, Yasuaki [Department of Chemistry, Keio University (Japan); Wibowo, Rahmat

    2016-04-19

    Electroreduction of CO{sub 2} was studied at copper-modified boron-doped diamond (Cu-BDD) electrodes as the working electrode. The Cu-BDD electrodes were prepared by electrochemical reduction with various concentrations of CuSO{sub 4} solutions. FE-SEM was utilized to characterize the electrodes. At Cu-BDD electrodes, a reduction peak at around -1.2 V (vs Ag/AgCl) attributtable to CO{sub 2} reductions could be observed by cyclic voltammetry technique of CO{sub 2} bubbled in water containing 0.1M NaCl. Accordingly, electroreduction of CO{sub 2} was conducted at -1.2 V (vs Ag/AgCl) using amperometry technique. The chemical products of the electroreduction analyzed by using HPLC showed the formation of formaldehyde, formic acid, and acetic acid at Cu-BDD electrodes.

  1. Fabrication of a Microfluidic Device with Boron-doped Diamond Electrodes for Electrochemical Analysis

    International Nuclear Information System (INIS)

    Watanabe, Takeshi; Shibano, Shuhei; Maeda, Hideto; Sugitani, Ai; Katayama, Michinobu; Matsumoto, Yoshinori; Einaga, Yasuaki

    2016-01-01

    A prototype microfluidic device using boron-doped diamond (BDD) electrodes patterned on an alumina chip was designed and fabricated. Electrochemical microfluidic devices have advantages in that the amount of sample required is small, the measurement throughput is high, different functions can be integrated on a single device, and they are highly durable. In using the device for the flow injection analysis of oxalic acid, the application of a brief conditioning step ensured that the reproducibility of the current signal was excellent. Furthermore, the fabricated system also performed as a prototype of “elimination-detection flow system”, in which interfering species are eliminated using “elimination electrodes” prior to the species reaching the “detection electrode”. The fabricated device reduced the current due to interfering species by 78%. Designs of devices to improve this efficiency are also discussed.

  2. Electrochemical and morphological characterization of gold nanoparticles deposited on boron-doped diamond electrode

    International Nuclear Information System (INIS)

    Limat, Meriadec; El Roustom, Bahaa; Jotterand, Henri; Foti, Gyoergy; Comninellis, Christos

    2009-01-01

    A novel two-step method was employed to synthesize gold nanoparticles dispersed on boron-doped diamond (BDD) electrode. It consisted of sputter deposition at ambient temperature of maximum 15 equivalent monolayers of gold, followed by a heat treatment in air at 600 deg. C. Gold nanoparticles with an average diameter between 7 and 30 nm could be prepared by this method on polycrystalline BDD film electrode. The obtained Au/BDD composite electrode appeared stable under conditions of electrochemical characterization performed using ferri-/ferrocyanide and benzoquinone/hydroquinone redox couples in acidic medium. The electrochemical behavior of Au/BDD was compared to that of bulk Au and BDD electrodes. Finally, the Au/BDD composite electrode was regarded as an array of Au microelectrodes dispersed on BDD substrate

  3. Simultaneous detection of iodine and iodide on boron doped diamond electrodes.

    Science.gov (United States)

    Fierro, Stéphane; Comninellis, Christos; Einaga, Yasuaki

    2013-01-15

    Individual and simultaneous electrochemical detection of iodide and iodine has been performed via cyclic voltammetry on boron doped diamond (BDD) electrodes in a 1M NaClO(4) (pH 8) solution, representative of typical environmental water conditions. It is feasible to compute accurate calibration curve for both compounds using cyclic voltammetry measurements by determining the peak current intensities as a function of the concentration. A lower detection limit of about 20 μM was obtained for iodide and 10 μM for iodine. Based on the comparison between the peak current intensities reported during the oxidation of KI, it is probable that iodide (I(-)) is first oxidized in a single step to yield iodine (I(2)). The latter is further oxidized to obtain IO(3)(-). This technique, however, did not allow for a reasonably accurate detection of iodate (IO(3)(-)) on a BDD electrode. Copyright © 2012 Elsevier B.V. All rights reserved.

  4. Batch fabrication of mesoporous boron-doped nickel oxide nanoflowers for electrochemical capacitors

    International Nuclear Information System (INIS)

    Yang, Jing-He; Yu, Qingtao; Li, Yamin; Mao, Liqun; Ma, Ding

    2014-01-01

    Highlights: • A new facile liquid-phase method has been employed for synthesis boron-doped NiO nanoflowers. • The specific surface area of NiO is as high as 200 m 2 g −1 . • NiO nanoflowers exhibit a high specific capacitance of ∼1309 F g −1 at a charge and discharge current density of 3 A g −1 . • NiO nanoflowers have excellent cycling ability and even after 2500 cycles there is no significant reduction in specific capacitance. - Abstract: Boron-doped nickel oxide (B-NiO) nanoflowers are prepared by simple thermal decomposition of nickel hydroxide. B-NiO is porous sphere with a diameter of about 400 nm. B-NiO nanoflowers are composed of approximately 30 nm nanoplates and the thickness of the nanosheets is approximately 3 nm. The specific surface area of the material is as high as 200 m 2 g −1 and the pore size distribution curves of B-NiO has three typical peaks in the range of mesoporous (5 nm, 13 nm and 18 nm). As an electrode for supercapacitors, the crystalline B-NiO nanoflowers have favorable characteristics, for instance, a specific capacitance of 1309 F g −1 at a current density of 3 A g −1 and no significant reduction in Coulombic efficiency after 2500 cycles at 37.5 A g −1 . This remarkable electrochemical performance will make B-NiO nanoflowers a promising electrode material for high performance supercapacitors

  5. Boron-doped cadmium oxide composite structures and their electrochemical measurements

    Energy Technology Data Exchange (ETDEWEB)

    Lokhande, B.J., E-mail: bjlokhande@yahoo.com [Lab of Smart Mtrls Supercapacitive and Energy Studies, School of Physical Sciences, Solapur University, Solapur 413255, Maharashtra (India); Ambare, R.C. [Lab of Smart Mtrls Supercapacitive and Energy Studies, School of Physical Sciences, Solapur University, Solapur 413255, Maharashtra (India); Mane, R.S. [School of Physical Sciences, Swami Ramanand Teerth Marathwada University, Nanded 431606 (India); Bharadwaj, S.R. [Chemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India)

    2013-08-01

    Graphical abstract: Conducting nano-fibrous 3% boron doped cadmium oxide thin films were prepared by SILAR and its super capacitive properties were studied. - Highlights: • Samples are of nanofibrous nature. • All samples shows pseudocapacitive behavior. • 3% B doped CdO shows good specific capacitance. • 3% B doped CdO shows maximum 74.93% efficiency at 14 mA/cm{sup 2}. • 3% B doped CdO shows 0.8 Ω internal resistance. - Abstract: Boron-doped and undoped cadmium oxide composite nanostructures in thin film form were prepared onto stainless steel substrates by a successive ionic layer adsorption and reaction method using aqueous solutions of cadmium nitrate, boric acid and 1% H{sub 2}O{sub 2}. As-deposited films were annealed at 623 K for 1 h. The X-ray diffraction study shows crystalline behavior for both doped and undoped films with a porous topography and nano-wires type architecture, as observed in SEM image. Wettability test confirms the hydrophilic surface with 58° contact angle value. Estimated band gap energy is around 1.9 eV. Electrochemical behavior of the deposited films is attempted in 1 M KOH electrolyte using cyclic voltammetry (CV), electrochemical impedance spectroscopy and galvanostatic charge–discharge tests. Maximum values of the specific capacitance, specific energy and specific power obtained for 3% B doped CdO film at 2 mV/s scan rate are 20.05 F/g, 1.22 Wh/kg and 3.25 kW/kg, respectively.

  6. High field magnetic behavior in Boron doped Fe{sub 2}VAl Heusler alloys

    Energy Technology Data Exchange (ETDEWEB)

    Venkatesh, Ch., E-mail: venkyphysicsiitm@gmail.com [Department of Physics, Indian Institute of Technology, Kharagpur (India); DCMP & MS, Tata Institute of Fundamental Research, Mumbai (India); Vasundhara, M., E-mail: vasu.mutta@gmail.com [Materials Science and Technology Division, National Institute for Interdisciplinary Science and Technology, CSIR, Trivandrum 695019 (India); Srinivas, V. [Department of Physics, Indian Institute of Technology, Chennai (India); Rao, V.V. [Cryogenic Engineering Centre, Indian Institute of Technology, Kharagpur (India)

    2016-11-15

    We have investigated the magnetic behavior of Fe{sub 2}VAl{sub 1−x}B{sub x} (x=0, 0.03, 0.06 and 0.1) alloys under high temperature and high magnetic field conditions separately. Although, the low temperature DC magnetization data for the alloys above x>0 show clear magnetic transitions, the zero field cooled (ZFC) and field cooled (FC) curves indicate the presence of spin cluster like features. Further, critical exponent (γ) deduced from the initial susceptibility above the T{sub c}, does not agree with standard models derived for 3 dimensional long range magnetic systems. The deviation in γ values are consistent with the short range magnetic nature of these alloys. We further extend the analysis of magnetic behavior by carrying the magnetization measurements at high temperatures and high magnetic fields distinctly. We mainly emphasize the following observations; (i) The magnetic hysteresis loops show sharp upturns at lower fields even at 900 K for all the alloys. (ii) High temperature inverse susceptibility do not overlap until T=900 K, indicating the persistent short range magnetic correlations even at high temperatures. (iii) The Arrott's plot of magnetization data shows spontaneous moment (M{sub S}) for the x=0 alloy at higher magnetic fields which is absent at lower fields (<50 kOe), while the Boron doped samples show feeble M{sub S} at lower fields. The origin of this short range correlation is due to presence of dilute magnetic heterogeneous phases which are not detected from the X-ray diffraction method. - Highlights: • Short range magnetic character has been confirmed by the critical exponents analysis. • Magnetoresistace is about −14% with non-saturating tendency even at 150 kOe for Fe{sub 2}VAl alloy. • Boron doped Fe{sub 2}VAl alloys show a weak magnetism even at T=900 K.

  7. First-principles studies of a photovoltaic material based on silicon heavily codoped with sulfur and nitrogen

    Science.gov (United States)

    Dong, Xiao; Wang, Yongyong; Song, Xiaohui; Yang, Feng

    2018-03-01

    In silicon co-hyperdoped with nitrogen and sulfur, dopant atoms tend to form dimers in the near-equilibrium process. The dimer that contains substitutional N and S atoms has the lowest formation energy and can form an impurity band that overlaps with the conduction band (CB). When separating the two atoms far apart from each other, the impurity band is clearly isolated from the CB and becomes an intermediate band (IB). The sub-band-gap absorption decreases with the decrease in the substitutional atom distance. The sub-band-gap absorption of the material is the combined effect of the configurations with different N-S distances.

  8. Test-beam evaluation of heavily irradiated silicon strip modules for ATLAS Phase-II Strip Tracker Upgrade

    CERN Document Server

    Blue, Andrew; The ATLAS collaboration

    2018-01-01

    The planned HL-LHC (High Luminosity LHC) is being designed to maximise the physics potential of the LHC with 10 years of operation at instantaneous luminosities of 7.5x1034cm−2s−1. A consequence of this increased luminosity is the expected radiation damage requiring the tracking detectors to withstand hadron equivalences to over 1x1015 1 MeV neutron equivalent per cm2 in the ATLAS Strips system. The silicon strip tracker exploits the concept of modularity. Fast readout electronics, deploying 130nm CMOS front-end electronics are glued on top of a silicon sensor to make a module. The radiation hard n-in-p micro-strip sensors used have been developed by the ATLAS ITk Strip Sensor collaboration and produced by Hamamatsu Photonics. A series of tests were performed at the DESY-II and CERN SPS test beam facilities to investigate the detailed performance of a strip module with both 2.5cm and 5cm length strips before and after irradiation with 8x1014neqcm−2 protons and a total ionising dose of 37.2MRad. The DURA...

  9. In vivo pH monitoring using boron doped diamond microelectrode and silver needles: Application to stomach disorder diagnosis

    OpenAIRE

    Fierro, St?phane; Seishima, Ryo; Nagano, Osamu; Saya, Hideyuki; Einaga, Yasuaki

    2013-01-01

    This study presents the in vivo electrochemical monitoring of pH using boron doped diamond (BDD) microelectrode and silver needles for potential application in medical diagnosis. Accurate calibration curve for pH determination were obtained through in vitro electrochemical measurements. The increase induced in stomach pH by treatment with pantoprazole was used to demonstrate that it is possible to monitor the pH in vivo using the simple and noninvasive system proposed herein. Using the result...

  10. Influence of boron content on the morphological, spectral, and electroanalytical characteristics of anodically oxidized boron-doped diamond electrodes

    Czech Academy of Sciences Publication Activity Database

    Schwarzová-Pecková, K.; Vosáhlová, J.; Barek, J.; Šloufová, I.; Pavlova, Ewa; Petrák, Václav; Zavázalová, J.

    2017-01-01

    Roč. 243, 20 July (2017), s. 170-182 ISSN 0013-4686 R&D Projects: GA TA ČR(CZ) TE01020118 Institutional support: RVO:61389013 ; RVO:68378271 Keywords : 2-aminobiphenyl * boron content * boron-doped diamond Subject RIV: CD - Macromolecular Chemistry; CG - Electrochemistry (FZU-D) OBOR OECD: Polymer science; Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis) (FZU-D) Impact factor: 4.798, year: 2016

  11. Electrochemical evaluation and determination of antiretroviral drug fosamprenavir using boron-doped diamond and glassy carbon electrodes.

    Science.gov (United States)

    Gumustas, Mehmet; Ozkan, Sibel A

    2010-05-01

    Fosamprenavir is a pro-drug of the antiretroviral protease inhibitor amprenavir and is oxidizable at solid electrodes. The anodic oxidation behavior of fosamprenavir was investigated using cyclic and linear sweep voltammetry at boron-doped diamond and glassy carbon electrodes. In cyclic voltammetry, depending on pH values, fosamprenavir showed one sharp irreversible oxidation peak or wave depending on the working electrode. The mechanism of the oxidation process was discussed. The voltammetric study of some model compounds allowed elucidation of the possible oxidation mechanism of fosamprenavir. The aim of this study was to determine fosamprenavir levels in pharmaceutical formulations and biological samples by means of electrochemical methods. Using the sharp oxidation response, two voltammetric methods were described for the determination of fosamprenavir by differential pulse and square-wave voltammetry at the boron-doped diamond and glassy carbon electrodes. These two voltammetric techniques are 0.1 M H(2)SO(4) and phosphate buffer at pH 2.0 which allow quantitation over a 4 x 10(-6) to 8 x 10(-5) M range using boron-doped diamond and a 1 x 10(-5) to 1 x 10(-4) M range using glassy carbon electrodes, respectively, in supporting electrolyte. All necessary validation parameters were investigated and calculated. These methods were successfully applied for the analysis of fosamprenavir pharmaceutical dosage forms, human serum and urine samples. The standard addition method was used in biological media using boron-doped diamond electrode. No electroactive interferences from the tablet excipients or endogenous substances from biological material were found. The results were statistically compared with those obtained through an established HPLC-UV technique; no significant differences were found between the voltammetric and HPLC methods.

  12. Kinetics and mechanism of the deep electrochemical oxidation of sodium diclofenac on a boron-doped diamond electrode

    Science.gov (United States)

    Vedenyapina, M. D.; Borisova, D. A.; Rosenwinkel, K.-H.; Weichgrebe, D.; Stopp, P.; Vedenyapin, A. A.

    2013-08-01

    The kinetics and mechanism of the deep oxidation of sodium diclofenac on a boron-doped diamond electrode are studied to develop a technique for purifying wastewater from pharmaceutical products. The products of sodium diclofenac electrolysis are analyzed using cyclic voltammetry and nuclear magnetic resonance techniques. It is shown that the toxicity of the drug and products of its electrolysis decreases upon its deep oxidation.

  13. Electrochemistry and in situ Raman spectroelectrochemistry of low and high quality boron doped diamond layers in aqueous electrolyte solution

    Czech Academy of Sciences Publication Activity Database

    Vlčková Živcová, Zuzana; Frank, Otakar; Petrák, Václav; Tarábková, Hana; Vacík, Jiří; Nesládek, M.; Kavan, Ladislav

    2013-01-01

    Roč. 87, JAN 2013 (2013), s. 518-525 ISSN 0013-4686 R&D Projects: GA AV ČR IAA400400804; GA AV ČR KAN200100801 Grant - others:European Commission CORDIS(XE) FP7-ENERGY-2010-FET, projekt 256617 Institutional support: RVO:61389005 ; RVO:61388955 ; RVO:68378271 Keywords : boron doped diamond * electrochemistry * aqueous electrolyte solution Subject RIV: CG - Electrochemistry Impact factor: 4.086, year: 2013

  14. Resistance to protein adsorption and adhesion of fibroblasts on nanocrystalline diamond films: the role of topography and boron doping

    Czech Academy of Sciences Publication Activity Database

    Alcaide, M.; Papaioannou, S.; Taylor, Andrew; Fekete, Ladislav; Gurevich, L.; Zachar, V.; Pennisi, C.P.

    2016-01-01

    Roč. 27, č. 5 (2016), s. 90-1-12 ISSN 0957-4530 R&D Projects: GA MŠk LO1409 Grant - others:FUNBIO(XE) CZ.2.16/3.1.00/21568 Institutional support: RVO:68378271 Keywords : protein adsorption * fibroblasts adhesion * nanocrystalline diamond * boron doping * topography Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.325, year: 2016

  15. Boron-Doped Carbon Nano-/Microballs from Orthoboric Acid-Starch: Preparation, Characterization, and Lithium Ion Storage Properties

    Directory of Open Access Journals (Sweden)

    Xinhua Lu

    2018-01-01

    Full Text Available A boron-doped carbon nano-/microballs (BC was successfully obtained via a two-step procedure including hydrothermal reaction (180°C and carbonization (800°C with cheap starch and H3BO3 as the carbon and boron source. As a new kind of boron-doped carbon, BC contained 2.03 at% B-content and presented the morphology as almost perfect nano-/microballs with different sizes ranging from 500 nm to 5 μm. Besides that, due to the electron deficient boron, BC was explored as anode material and presented good lithium storage performance. At a current density of 0.2 C, the first reversible specific discharge capacity of BC electrode reached as high as 964.2 mAh g–1 and kept at 699 mAh g–1 till the 11th cycle. BC also exhibited good cycle ability with a specific capacity of 356 mAh g–1 after 79 cycles at a current density of 0.5 C. This work proved to be an effective approach for boron-doped carbon nanostructures which has potential usage for lithium storage material.

  16. Deposition of boron doped DLC films on TiNb and characterization of their mechanical properties and blood compatibility.

    Science.gov (United States)

    Liza, Shahira; Hieda, Junko; Akasaka, Hiroki; Ohtake, Naoto; Tsutsumi, Yusuke; Nagai, Akiko; Hanawa, Takao

    2017-01-01

    Diamond-like carbon (DLC) material is used in blood contacting devices as the surface coating material because of the antithrombogenicity behavior which helps to inhibit platelet adhesion and activation. In this study, DLC films were doped with boron during pulsed plasma chemical vapor deposition (CVD) to improve the blood compatibility. The ratio of boron to carbon (B/C) was varied from 0 to 0.4 in the film by adjusting the flow rate of trimethylboron and acetylene. Tribological tests indicated that boron doping with a low B/C ratio of 0.03 is beneficial for reducing friction (μ = 0.1), lowering hardness and slightly increasing wear rate compared to undoped DLC films. The B/C ratio in the film of 0.03 and 0.4 exhibited highly hydrophilic surface owing to their high wettability and high surface energy. An in vitro platelet adhesion experiment was conducted to compare the blood compatibility of TiNb substrates before and after coating with undoped and boron doped DLC. Films with highly hydrophilic surface enhanced the blood compatibility of TiNb, and the best results were obtained for DLC with the B/C ratio of 0.03. Boron doped DLC films are promising surface coatings for blood contacting devices.

  17. High-field EPR spectroscopy of thermal donors in silicon

    DEFF Research Database (Denmark)

    Dirksen, R.; Rasmussen, F.B.; Gregorkiewicz, T.

    1997-01-01

    Thermal donors generated in p-type boron-doped Czochralski-grown silicon by a 450 degrees C heat treatment have been studied by high-field magnetic resonance spectroscopy. In the experiments conducted at a microwave frequency of 140 GHz and in a magnetic field of approximately 5 T four individual...

  18. Boron doped nanostructure ZnO films deposited by ultrasonic spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Karakaya, Seniye, E-mail: seniyek@ogu.edu.tr; Ozbas, Omer

    2015-02-15

    Highlights: • Nanostructure undoped and boron doped ZnO films were deposited by USP technique. • Influences of doping on the surface and optical properties of the ZnO films were investigated. • XRD spectra of the films exhibited a variation in crystalline quality depending on the B content. - Abstract: ZnO is an II–VI compound semiconductor with a wide direct band gap of 3.3 eV at room temperature. Doped with group III elements (B, Al or Ga), it becomes an attractive candidate to replace tin oxide (SnO{sub 2}) or indium tin oxide (ITO) as transparent conducting electrodes in solar cell devices and flat panel display due to competitive electrical and optical properties. In this work, ZnO and boron doped ZnO (ZnO:B) films have been deposited onto glass substrates at 350 ± 5 °C by a cost-efficient ultrasonic spray pyrolysis technique. The optical, structural, morphological and electrical properties of nanostructure undoped and ZnO:B films have been investigated. Electrical resistivity of films has been analyzed by four-probe technique. Optical properties and thicknesses of the films have been examined in the wavelength range 1200–1600 nm by using spectroscopic ellipsometry (SE) measurements. The optical constants (refractive index (n) and extinction coefficient (k)) and the thicknesses of the films have been fitted according to Cauchy model. The optical method has been used to determine the band gap value of the films. Transmission spectra have been taken by UV spectrophotometer. It is found that both ZnO and ZnO:B films have high average optical transmission (≥80%). X-ray diffraction (XRD) patterns indicate that the obtained ZnO has a hexagonal wurtzite type structure. The morphological properties of the films were studied by atomic force microscopy (AFM). The surface morphology of the nanostructure films is found to depend on the concentration of B. As a result, ZnO:B films are promising contender for their potential use as transparent window layer and

  19. Investigations on photoelectrochemical performance of boron doped ZnO nanorods synthesized by facile hydrothermal technique

    Science.gov (United States)

    Sharma, Akash; Chakraborty, Mohua; Thangavel, R.

    2018-05-01

    Undoped and 10% Boron (B)-doped Zinc Oxide nanorods (ZnO NRs) on Tin doped Indium Oxide (ITO) coated glass substrates were synthesized using facile sol-gel, spin coating and hydrothermal method. The impact of adding Boron on the structural, optical properties, surface morphology and photoelectrochemical (PEC) performances of the ZnO NRs have been investigated. The XRD pattern confirmed the formation of pure hexagonal phase with space group P63mc (186). The same can also be clearly observed form the FESEM images. The UV-Vis study shows the narrowing in band gap from 3.22 eV to 3.19 eV with incorporation of Boron in ZnO matrix. The B-doped ZnO NRs sample shows an enhanced photocurrent density of 1.31 mA/cm2 at 0.5 V (vs. Ag/AgCl), which is more than 171% enhancement compared to bare ZnO NRs (0.483 mA/cm2) in 0.1 M Na2SO4 aqueous solution. The results clearly indicates that the boron doped ZnO NRs can be used as an efficient photoelectrode material for photoelectrochemical cell.

  20. Electrochemical incineration of dimethyl phthalate by anodic oxidation with boron-doped diamond electrode

    Institute of Scientific and Technical Information of China (English)

    HOU Yining; QU Jiuhui; ZHAO Xu; LIU Huijuan

    2009-01-01

    The anodic oxidation of aqueous solutions containing dimethyl phthalate (DMP) up to 125 mg/L with sodium sulfate (Na2SO4) as supporting electrolyte within the pH range 2.0-10.0 was studied using a one-compartment batch reactor employing a boron-doped diamond (BDD) as anode. Electrolyses were carried out at constant current density (1.5-4.5 mA/cm2). Complete mineralization was always achieved owing to the great concentration of hydroxyl radical (·OH) generated at the BDD surface. The effect of pH, apparent current density and initial DMP concentration on the degradation rate of DMP, the specific charge required for its total mineralization and mineralization current efficiency was investigated systematically. The mineralization rate of DMP was found to be pH-independent and to increase with increasing applied current density. Results indicated that this electrochemical process was subjected, at least partially, to the mass transfer of organics onto the BDD surface. Kinetic analysis of the temporal change of DMP concentration during electrolysis determined by High Performance Liquid Chromatography (HPLC) revealed that DMP decay under all tested conditions followed a pseudo first-order reaction. Aromatic intermediates and generated carboxylic acids were identified by Gas Chromatography-Mass Spectrometry (GC-MS) and a general pathway for the electrochemical incineration of DMP on BDD was proposed.

  1. Boron-doped, carbon-coated SnO2/graphene nanosheets for enhanced lithium storage.

    Science.gov (United States)

    Liu, Yuxin; Liu, Ping; Wu, Dongqing; Huang, Yanshan; Tang, Yanping; Su, Yuezeng; Zhang, Fan; Feng, Xinliang

    2015-03-27

    Heteroatom doping is an effective method to adjust the electrochemical behavior of carbonaceous materials. In this work, boron-doped, carbon-coated SnO2 /graphene hybrids (BCTGs) were fabricated by hydrothermal carbonization of sucrose in the presence of SnO2/graphene nanosheets and phenylboronic acid or boric acid as dopant source and subsequent thermal treatment. Owing to their unique 2D core-shell architecture and B-doped carbon shells, BCTGs have enhanced conductivity and extra active sites for lithium storage. With phenylboronic acid as B source, the resulting hybrid shows outstanding electrochemical performance as the anode in lithium-ion batteries with a highly stable capacity of 1165 mA h g(-1) at 0.1 A g(-1) after 360 cycles and an excellent rate capability of 600 mA h g(-1) at 3.2 A g(-1), and thus outperforms most of the previously reported SnO2-based anode materials. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Fabrication and Characterization of N-Type Zinc Oxide/P-Type Boron Doped Diamond Heterojunction

    Science.gov (United States)

    Marton, Marián; Mikolášek, Miroslav; Bruncko, Jaroslav; Novotný, Ivan; Ižák, Tibor; Vojs, Marian; Kozak, Halyna; Varga, Marián; Artemenko, Anna; Kromka, Alexander

    2015-09-01

    Diamond and ZnO are very promising wide-bandgap materials for electronic, photovoltaic and sensor applications because of their excellent electrical, optical, physical and electrochemical properties and biocompatibility. In this contribution we show that the combination of these two materials opens up the potential for fabrication of bipolar heterojunctions. Semiconducting boron doped diamond (BDD) thin films were grown on Si and UV grade silica glass substrates by HFCVD method with various boron concentration in the gas mixture. Doped zinc oxide (ZnO:Al, ZnO:Ge) thin layers were deposited by diode sputtering and pulsed lased deposition as the second semiconducting layer on the diamond films. The amount of dopants within the films was varied to obtain optimal semiconducting properties to form a bipolar p-n junction. Finally, different ZnO/BDD heterostructures were prepared and analyzed. Raman spectroscopy, SEM, Hall constant and I-V measurements were used to investigate the quality, structural and electrical properties of deposited heterostructures, respectively. I-V measurements of ZnO/BDD diodes show a rectifying ratio of 55 at ±4 V. We found that only very low dopant concentrations for both semiconducting materials enabled us to fabricate a functional p-n junction. Obtained results are promising for fabrication of optically transparent ZnO/BDD bipolar heterojunction.

  3. Simultaneous Chronoamperometric Sensing of Ascorbic Acid and Acetaminophen at a Boron-Doped Diamond Electrode

    Directory of Open Access Journals (Sweden)

    Ciprian Radovan

    2008-06-01

    Full Text Available Cyclic voltammetry (CV and chronoamperometry (CA have been used to sense and determine simultaneously L-ascorbic acid (AA and acetaminophen (AC at a boron-doped diamond electrode (BDDE in a Britton-Robinson buffer solution. The calibration plots of anodic current peak versus concentration obtained from CV and CA data for both investigated compounds in single and di-component solutions over the concentration range 0.01 mM – 0.1 mM proved to be linear, with very good correlation parameters. Sensitivity values and RSD of 2-3% were obtained for various situations, involving both individual and simultaneous presence of AA and AC. The chronoamperometric technique associated with standard addition in sequential one step and/or two successive and continuous chronoamperograms at two characteristic potential levels represented a feasible option for the simultaneous determination of AA and AC in real sample systems such as pharmaceutical formulations. The average values indicated by the supplier were confirmed to a very close approximation from chronoamperomgrams by using several additions with the application of suitable current correction factors.

  4. Origin of spin-polarization in edge boron doped zigzag graphene nanoribbon: a potential spin filter.

    Science.gov (United States)

    Chakrabarty, Soubhik; Wasey, A H M Abdul; Thapa, Ranjit; Das, Gour Prasad

    2018-06-04

    To realize the graphene based spintronic device the prime challenge is to control the electronic structure of edges. In this work we find the origin of spin filtering property in edge boron doped zigzag graphene nanoribbon (ZGNRs) and provide a guide to prepare the graphene based next generation spin filter based device. Here we unveil the role of orbital (p-electron) to tune the electronic, magnetic and transport properties of the edge B doped ZGNRs. When all the edge carbon atoms at one of the edges of ZGNRs are replaced by B (100% edge B-doping), the system undergoes semiconductor to metal transition. The role of passivation of the edge with single/double atomic hydrogen on the electronic properties and its relation with the p electron is correlated in-depth. 50% edge B-doped ZGNRs (50% of the edge C atoms at one of the edges are replaced by B) also shows half-metallicity when the doped edge is left unpassivated. The half-metallic systems show 100% spin-filtering efficiency for a wide range of bias voltages. Zero bias transmission function of the other configurations shows asymmetric behavior for the up and down spin channels, thereby indicating their possible application potential in nano-spintronics. © 2018 IOP Publishing Ltd.

  5. Anodic oxidation of slaughterhouse wastewater on boron-doped diamond: process variables effect.

    Science.gov (United States)

    Abdelhay, Arwa; Jum'h, Inshad; Abdulhay, Enas; Al-Kazwini, Akeel; Alzubi, Mashael

    2017-12-01

    A non-sacrificial boron-doped diamond electrode was prepared in the laboratory and used as a novel anode for electrochemical oxidation of poultry slaughterhouse wastewater. This wastewater poses environmental threats as it is characterized by a high content of recalcitrant organics. The influence of several process variables, applied current density, initial pH, supporting electrolyte nature, and concentration of electrocoagulant, on chemical oxygen demand (COD) removal, color removal, and turbidity removal was investigated. Results showed that raising the applied current density to 3.83 mA/cm 2 has a positive effect on COD removal, color removal, and turbidity removal. These parameters increased to 100%, 90%, and 80% respectively. A low pH of 5 favored oxidants generation and consequently increased the COD removal percentage to reach 100%. Complete removal of COD had occurred in the presence of NaCl (1%) as supporting electrolyte. Na 2 SO 4 demonstrated lower efficiency than NaCl in terms of COD removal. The COD decay kinetics follows the pseudo-first-order reaction. The simultaneous use of Na 2 SO 4 and FeCl 3 decreased the turbidity in wastewater by 98% due to electrocoagulation.

  6. Parabens abatement from surface waters by electrochemical advanced oxidation with boron doped diamond anodes.

    Science.gov (United States)

    Domínguez, Joaquín R; Muñoz-Peña, Maria J; González, Teresa; Palo, Patricia; Cuerda-Correa, Eduardo M

    2016-10-01

    The removal efficiency of four commonly-used parabens by electrochemical advanced oxidation with boron-doped diamond anodes in two different aqueous matrices, namely ultrapure water and surface water from the Guadiana River, has been analyzed. Response surface methodology and a factorial, composite, central, orthogonal, and rotatable (FCCOR) statistical design of experiments have been used to optimize the process. The experimental results clearly show that the initial concentration of pollutants is the factor that influences the removal efficiency in a more remarkable manner in both aqueous matrices. As a rule, as the initial concentration of parabens increases, the removal efficiency decreases. The current density also affects the removal efficiency in a statistically significant manner in both aqueous matrices. In the water river aqueous matrix, a noticeable synergistic effect on the removal efficiency has been observed, probably due to the presence of chloride ions that increase the conductivity of the solution and contribute to the generation of strong secondary oxidant species such as chlorine or HClO/ClO - . The use of a statistical design of experiments made it possible to determine the optimal conditions necessary to achieve total removal of the four parabens in ultrapure and river water aqueous matrices.

  7. Fabrication and application of boron doped diamond BDD electrode in olive mill wastewater treatment in Jordan

    Directory of Open Access Journals (Sweden)

    Inshad Jum'h

    2017-12-01

    Full Text Available A boron doped diamond (BDD electrode was employed in an electrochemical reactor to oxidize the phenolic content of Jordanian olive mill wastewater. The BDD anode was fabricated using hot filament chemical vapor deposition on niobium and the morphology of the BDD electrode was characterized using an atomic force microscope. Then, electrolysis batch runs were carried out at laboratory scale to test the effect of different process parameters, namely, initial chemical oxygen demand (COD load (72.9, 33.8, and 0.18 g/L, the addition of Na2SO4 as supporting electrolyte, and adding NaCl along with Na2SO4, on the efficiency of the treatment process. The results were reported in terms of COD, color and turbidity removal, and pH variation. The experiments revealed that electrochemical oxidation using BDD significantly reduced the COD by 85% with no supporting electrolytes. It was observed that adding Na2SO4 with NaCl brought the COD removal to higher than 90% after 7 hours of treatment for COD loads of 72.9 and 33.8 g/L, and after 2 hours for a COD load of 0.18 g/L. Likewise, color was completely removed regardless of the initial COD load. The turbidity for samples with 72.9 and 33.8 g/L as COD load reached a minimal value of 2.5 and 1 NTU respectively.

  8. In-situ boron doping of chemical-bath deposited CdS thin films

    International Nuclear Information System (INIS)

    Khallaf, Hani; Park, S.; Schulte, Alfons; Chai, Guangyu; Lupan, Oleg; Chow, Lee; Heinrich, Helge

    2009-01-01

    In-situ boron doping of CdS using chemical-bath deposition (CBD) is reported. The effect of B doping on optical properties, as well as electrical properties, crystal structure, chemistry, and morphology of CdS films is studied. We present a successful approach towards B doping of CdS using CBD, where a resistivity as low as 1.7 x 10 -2 Ωcm and a carrier density as high as 1.91 x 10 19 cm -3 were achieved. The bandgap of B-doped films was found to slightly decrease as the[B]/[Cd] ratio in the solution increases. X-ray diffraction studies showed B 3+ ions likely enter the lattice substitutionally. A phase transition, due to annealing, as well as induced lattice defects, due to B doping, were detected by micro-Raman spectroscopy and transmission electron microscopy. The chemistry and morphology of films were unaffected by B doping. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Comparison of electrocatalytic characterization of boron-doped diamond and SnO2 electrodes

    International Nuclear Information System (INIS)

    Lv, Jiangwei; Feng, Yujie; Liu, Junfeng; Qu, Youpeng; Cui, Fuyi

    2013-01-01

    Boron-doped diamond (BDD) and SnO 2 electrodes were prepared by direct current plasma chemical vapor deposition (DC-PCVD) and sol–gel method, respectively. Electrochemical characterization of the two electrodes were investigated by phenol electrochemical degradation, accelerated service life test, cyclic voltammetry (CV) in phenol solution, polarization curves in H 2 SO 4 . The surface morphology and crystal structure of two electrodes were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analysis. The results showed a considerable difference between the two electrodes in their electrocatalytic activity, electrochemical stability and surface properties. Phenol was readily mineralized to CO 2 at BDD electrode, favoring electrochemical combustion, but its degradation was much slower at SnO 2 electrode. The service life of BDD electrode was 10 times longer than that of SnO 2 . Higher electrocatalytic activity and electrochemical stability of BDD electrode arise from its high oxygen evolution potential and the physically absorbed hydroxyl radicals (·OH) on electrode surface.

  10. Electrochemical degradation of chlorobenzene on boron-doped diamond and platinum electrodes

    International Nuclear Information System (INIS)

    Liu Lei; Zhao Guohua; Wu Meifen; Lei Yanzhu; Geng Rong

    2009-01-01

    In this paper the electrochemical degradation of chlorobenzene (CB) was investigated on boron-doped diamond (BDD) and platinum (Pt) anodes, and the degradation kinetics on these two electrodes was compared. Compared with the total mineralization with a total organic carbon (TOC) removal of 85.2% in 6 h on Pt electrode, the TOC removal reached 94.3% on BDD electrode under the same operate condition. Accordingly, the mineralization current efficiency (MCE) during the mineralization on BDD electrode was higher than that on the Pt electrode. Besides TOC, the conversion of CB, the productions and decay of intermediates were also monitored. Kinetic study indicated that the decay of CB on BDD and Pt electrodes were both pseudo-first-order reactions, and the reaction rate constant (k s ) on BDD electrode was higher than that on Pt electrode. The different reaction mechanisms on the two electrodes were investigated by the variation of intermediates concentrations. Two different reaction pathways for the degradation of CB on BDD electrode and Pt electrode involving all these intermediates were proposed.

  11. Electrochemical detection of L-cysteine using a boron-doped carbon nanotube-modified electrode

    International Nuclear Information System (INIS)

    Deng Chunyan; Chen Jinhua; Chen Xiaoli; Wang Mengdong; Nie Zhou; Yao Shouzhuo

    2009-01-01

    A boron-doped carbon nanotube (BCNT)-modified glassy carbon (GC) electrode was constructed for the detection of L-cysteine (L-CySH). The electrochemical behavior of BCNTs in response to L-cysteine oxidation was investigated. The response current of L-CySH oxidation at the BCNT/GC electrode was obviously higher than that at the bare GC electrode or the CNT/GC electrode. This finding may be ascribed to the excellent electrochemical properties of the BCNT/GC electrode. Moreover, on the basis of this finding, a determination of L-CySH at the BCNT/GC electrode was carried out. The effects of pH, scan rate and interferents on the response of L-CySH oxidation were investigated. Under the optimum experimental conditions, the detection response for L-CySH on the BCNT/GC electrode was fast (within 7 s). It was found to be linear from 7.8 x 10 -7 to 2 x 10 -4 M (r = 0.998), with a high sensitivity of 25.3 ± 1.2 nA mM -1 and a low detection limit of 0.26 ± 0.01 μM. The BCNT/GC electrode exhibited high stability and good resistance against interference by other oxidizable amino acids (tryptophan and tyrosine)

  12. Comparison of glassy carbon and boron doped diamond electrodes: Resistance to biofouling

    Energy Technology Data Exchange (ETDEWEB)

    Trouillon, Raphael, E-mail: raphael.trouillon06@imperial.ac.u [Department of Bioengineering, Imperial College London, Royal School of Mines Building, London SW7 2AZ (United Kingdom); O' Hare, Danny [Department of Bioengineering, Imperial College London, Royal School of Mines Building, London SW7 2AZ (United Kingdom)

    2010-09-01

    Carbon based electrodes are widely used for in vivo and in vitro electrochemical studies. In particular, monoamine neurochemistry has been investigated using carbon microfibre electrodes. Similarly, glassy carbon (GC) is the preferred material for many biochemical applications, such as electrochemical detection in chromatography. More recently, boron doped diamond (BDD) has been utilized for biosensing, as its carbon sp{sup 3} structure is expected to provide better resistance to analyte fouling. However, the main factor limiting the use of electrochemical sensors for biological studies is the effect of the biological matrix. Indeed, in vivo or in situ measurements expose the sensor to a complex matrix of proteins, which adsorb on the sensing surface and interfere with the electrochemical measurements. Here, we compare the performance of three carbon based electrodes: GC, GC with low surface oxides and BDD. The redox species ruthenium(III) hexaammine (outer-sphere), ferrocyanide (surface sensitive) and the biologically significant dopamine have been investigated in protein and blood-mimicking matrices. Cyclic voltammetry and electrochemical impedance spectroscopy have been used to examine the effect of spectator molecules and reaction products on electrode mechanisms. Our results show that BDD generally exhibits the best performance for most conditions and reactions and should therefore be preferred for measurements in biologically fouling environments. Furthermore, surface oxides seem also to improve resistance of the GC electrode to biofouling.

  13. Dibenzothiophene adsorption at boron doped carbon nanoribbons studied within density functional theory

    Energy Technology Data Exchange (ETDEWEB)

    López-Albarrán, P. [Facultad de Ingeniería en Tecnología de la Madera, Universidad Michoacana de San Nicolás de Hidalgo, Santiago Tapia 403, CP 58000, Morelia, Michoacán (Mexico); Navarro-Santos, P., E-mail: pnavarrosa@conacyt.mx [Instituto de Investigaciones Químico-Biológicas, Universidad Michoacana de San Nicolás de Hidalgo, Santiago Tapia 403, CP 58000, Morelia, Michoacán (Mexico); Garcia-Ramirez, M. A. [Research Centre for Innovation in Aeronautical Engineering, Universidad Autónoma de Nuevo León, Ciudad Universitaria, San Nicolás de los Garza, CP 66451 Nuevo León (Mexico); Ricardo-Chávez, J. L. [Instituto Potosino de Investigación Científica y Tecnológica, Camino a la Presa San José 2055, Lomas 4" asección, CP 78216, San Luis Potosí, S. L. P. (Mexico)

    2015-06-21

    The adsorption of dibenzothiophene (DBT) on bare and boron-doped armchair carbon nanoribbons (ACNRs) is being investigated in the framework of the density functional theory by implementing periodic boundary conditions that include corrections from dispersion interactions. The reactivity of the ACNRs is characterized by using the Fukui functions as well as the electrostatic potential as local descriptors. Non-covalent adsorption mechanism is found when using the local Perdew-Becke-Ernzerhof functional, regardless of the DBT orientation and adsorption location. The dispersion interactions addition is a milestone to describe the adsorption process. The charge defects introduced in small number (i.e., by doping with B atoms), within the ACNRs increases the selectivity towards sulfur mainly due to the charge depletion at B sites. The DBT magnitude in the adsorption energy shows non-covalent interactions. As a consequence, the configurations where the DBT is adsorbed on a BC{sub 3} island increase the adsorption energy compared to random B arrangements. The stability of these configurations can be explained satisfactorily in terms of dipole interactions. Nevertheless, from the charge-density difference analysis and the weak Bader charge-distribution interactions cannot be ruled out completely. This is why the electronic properties of the ribbons are analyzed in order to elucidate the key role played by the B and DBT states in the adsorbed configurations.

  14. Electro-oxidation of diclofenac at boron doped diamond: Kinetics and mechanism

    International Nuclear Information System (INIS)

    Zhao Xu; Hou Yining; Liu Huijuan; Qiang Zhimin; Qu Jiuhui

    2009-01-01

    Diclofenac is a common anti-inflammatory drug. Its electrochemical degradation at boron doped diamond electrode was investigated in aqueous solution. The degradation kinetics and the intermediate products were studied. Results showed that electro-oxidation was effective in inducing the degradation of diclofenac with 30 mg/L initial concentration, ensuring a mineralization degree of 72% after a 4 h treatment with the applied bias potential of 4.0 V. The effects of applied bias potential and addition of NaCl on diclofenac degradation were investigated. Different degradation mechanisms of diclofenac were involved at various applied bias potentials. With the addition of NaCl, some chlorination intermediates including dichlorodiclofenac were identified, which lead to the total organic carbon increase compared with the electrolysis process without NaCl addition at the reaction initial period. The main intermediates including 2,6-dichlorobenzenamine, 2,5-dihydroxybenzyl alcohol, and benzoic acid are identified at the time of 2 h. 1-(2,6-Dichlorocyclohexa-2,4-dienyl)indolin-2-one were also identified. These intermediates disappeared gradually with the extension of reaction time. Small molecular acids were identified finally. Based on these results, a degradation pathway of diclofenac was proposed.

  15. Electro-oxidation of diclofenac at boron doped diamond: Kinetics and mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Zhao Xu; Hou Yining; Liu Huijuan; Qiang Zhimin [State Key Laboratory of Environmental Aquatic Chemistry, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing, 100085 (China); Qu Jiuhui [State Key Laboratory of Environmental Aquatic Chemistry, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing, 100085 (China)], E-Mail: jhqu@mail.rcees.ac.cn

    2009-07-01

    Diclofenac is a common anti-inflammatory drug. Its electrochemical degradation at boron doped diamond electrode was investigated in aqueous solution. The degradation kinetics and the intermediate products were studied. Results showed that electro-oxidation was effective in inducing the degradation of diclofenac with 30 mg/L initial concentration, ensuring a mineralization degree of 72% after a 4 h treatment with the applied bias potential of 4.0 V. The effects of applied bias potential and addition of NaCl on diclofenac degradation were investigated. Different degradation mechanisms of diclofenac were involved at various applied bias potentials. With the addition of NaCl, some chlorination intermediates including dichlorodiclofenac were identified, which lead to the total organic carbon increase compared with the electrolysis process without NaCl addition at the reaction initial period. The main intermediates including 2,6-dichlorobenzenamine, 2,5-dihydroxybenzyl alcohol, and benzoic acid are identified at the time of 2 h. 1-(2,6-Dichlorocyclohexa-2,4-dienyl)indolin-2-one were also identified. These intermediates disappeared gradually with the extension of reaction time. Small molecular acids were identified finally. Based on these results, a degradation pathway of diclofenac was proposed.

  16. Temperature-dependent Photoluminescence of Boron-doped ZnO Nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Soaram; Park, Hyunggil; Nam, Giwoong; Yoon, Hyunsik; Leem, Jaeyoung [Inje Univ., Gimhae (Korea, Republic of); Kim, Jong Su; Lee, Sangheon [Yeungnam Univ., Gyeongsan (Korea, Republic of); Kim, Jin Soo [Chonbuk National Univ., Jeonju (Korea, Republic of); Son, Jeongsik [Kyungwoon Univ., Gumi (Korea, Republic of)

    2013-11-15

    Boron-doped ZnO (BZO) nanorods were grown on quartz substrates using hydrothermal synthesis, and the temperature-dependence of their photoluminescence (PL) was measured in order to investigate the origins of their PL properties. In the UV range, near-band-edge emission (NBE) was observed from 3.1 to 3.4 eV; this was attributed to various transitions including recombination of free excitons and their longitudinal optical (LO) phonon replicas, and donor-acceptor pair (DAP) recombination, depending on the local lattice configuration and the presence of defects. At a temperature of 12 K, the NBE produces seven peaks at 3.386, 3.368, 3.337, 3.296, 3.258, 3.184, and 3.106 eV. These peaks are, respectively, assigned to free excitons (FX), neutral-donor bound excitons (D{sup o}X), and the first LO phonon replicas of D{sup o}X, DAP, DAP-1LO, DAP-2LO, and DAP-3LO. The peak position of the FX and DAP were also fitted to Varshni's empirical formula for the variation in the band gap energy with temperature. The activation energy of FX was about ∼70 meV, while that of DAP was about ∼38 meV. We also discuss the low temperature PL near 2.251 eV, related to structural defects.

  17. Direct electrochemistry of blue copper proteins at boron-doped diamond electrodes

    Energy Technology Data Exchange (ETDEWEB)

    McEvoy, James P. [Department of Chemistry, University of Oxford, Chemistry Research Laboratory, Mansfield Road, Oxford, OX1 3TA (United Kingdom); Foord, John S. [Department of Chemistry, University of Oxford, Chemistry Research Laboratory, Mansfield Road, Oxford, OX1 3TA (United Kingdom)]. E-mail: john.foord@chem.ox.ac.uk

    2005-05-05

    Boron-doped diamond (BDD) is a promising electrode material for use in the spectro-electrochemical study of redox proteins and, in this investigation, cyclic voltammetry was used to obtain quasi-reversible electrochemical responses from two blue copper proteins, parsley plastocyanin and azurin from Pseudomonas aeruginosa. No voltammetry was observed at the virgin electrodes, but signals were observed if the electrodes were anodised, or abraded with alumina, prior to use. Plastocyanin, which has a considerable overall negative charge and a surface acidic patch which is important in forming a productive electron transfer complex with its redox partners, gave a faradaic signal at pre-treated BDD only in the presence of neomycin, a positively charged polyamine. The voltammetry of azurin, which has a small overall charge and no surface acidic patch, was obtained identically in the presence and absence of neomycin. Investigations were also carried out into the voltammetry of two site-directed mutants of azurin, M64E azurin and M44K azurin, each of which introduce a charge into the protein's surface hydrophobic patch. The oxidizing and cleaning effects of the BDD electrode pre-treatments were studied electrochemically using two inorganic probe ions, Fe(China){sub 6} {sup 3-} and Ru(NH{sub 3}){sub 6} {sup 3+}, and by X-ray photoelectron spectroscopy (XPS). All of the electrochemical results are discussed in relation to the electrostatic and hydrophobic contributions to the protein/diamond electrochemical interaction.

  18. Direct electrochemistry of blue copper proteins at boron-doped diamond electrodes

    International Nuclear Information System (INIS)

    McEvoy, James P.; Foord, John S.

    2005-01-01

    Boron-doped diamond (BDD) is a promising electrode material for use in the spectro-electrochemical study of redox proteins and, in this investigation, cyclic voltammetry was used to obtain quasi-reversible electrochemical responses from two blue copper proteins, parsley plastocyanin and azurin from Pseudomonas aeruginosa. No voltammetry was observed at the virgin electrodes, but signals were observed if the electrodes were anodised, or abraded with alumina, prior to use. Plastocyanin, which has a considerable overall negative charge and a surface acidic patch which is important in forming a productive electron transfer complex with its redox partners, gave a faradaic signal at pre-treated BDD only in the presence of neomycin, a positively charged polyamine. The voltammetry of azurin, which has a small overall charge and no surface acidic patch, was obtained identically in the presence and absence of neomycin. Investigations were also carried out into the voltammetry of two site-directed mutants of azurin, M64E azurin and M44K azurin, each of which introduce a charge into the protein's surface hydrophobic patch. The oxidizing and cleaning effects of the BDD electrode pre-treatments were studied electrochemically using two inorganic probe ions, Fe(China) 6 3- and Ru(NH 3 ) 6 3+ , and by X-ray photoelectron spectroscopy (XPS). All of the electrochemical results are discussed in relation to the electrostatic and hydrophobic contributions to the protein/diamond electrochemical interaction

  19. Electrochemical oxidation of nitrogen-heterocyclic compounds at boron-doped diamond electrode.

    Science.gov (United States)

    Xing, Xuan; Zhu, Xiuping; Li, Hongna; Jiang, Yi; Ni, Jinren

    2012-01-01

    Nitrogen-heterocyclic compounds (NHCs) are toxic and bio-refractory contaminants widely spread in environment. This study investigated electrochemical degradation of NHCs at boron-doped diamond (BDD) anode with particular attention to the effect of different number and position of nitrogen atoms in molecular structure. Five classical NHCs with similar structures including indole (ID), quinoline (QL), isoquinoline (IQL), benzotriazole (BT) and benzimidazole (BM) were selected as the target compounds. Results of bulk electrolysis showed that degradation of all NHCs was fit to a pseudo first-order equation. The five compounds were degraded with the following sequence: ID>QL>IQL>BT>BM in terms of their rates of oxidation. Quantum chemical calculation was combined with experimental results to describe the degradation character of NHCs at BDD anode. A linear relationship between degradation rate and delocalization energy was observed, which demonstrated that electronic charge was redistributed through the conjugation system and accumulated at the active sites under the attack of hydroxyl radicals produced at BDD anode. Moreover, atom charge was calculated by semi empirical PM3 method and active sites of NHCs were identified respectively. Analysis of intermediates by GC-MS showed agreement with calculation results. Copyright © 2011 Elsevier Ltd. All rights reserved.

  20. Raman Microscopic Analysis of Internal Stress in Boron-Doped Diamond

    Directory of Open Access Journals (Sweden)

    Kevin E. Bennet

    2015-05-01

    Full Text Available Analysis of the induced stress on undoped and boron-doped diamond (BDD thin films by confocal Raman microscopy is performed in this study to investigate its correlation with sample chemical composition and the substrate used during fabrication. Knowledge of this nature is very important to the issue of long-term stability of BDD coated neurosurgical electrodes that will be used in fast-scan cyclic voltammetry, as potential occurrence of film delaminations and dislocations during their surgical implantation can have unwanted consequences for the reliability of BDD-based biosensing electrodes. To achieve a more uniform deposition of the films on cylindrically-shaped tungsten rods, substrate rotation was employed in a custom-built chemical vapor deposition reactor. In addition to visibly preferential boron incorporation into the diamond lattice and columnar growth, the results also reveal a direct correlation between regions of pure diamond and enhanced stress. Definite stress release throughout entire film thicknesses was found in the current Raman mapping images for higher amounts of boron addition. There is also a possible contribution to the high values of compressive stress from sp2 type carbon impurities, besides that of the expected lattice mismatch between film and substrate.

  1. Comparison of glassy carbon and boron doped diamond electrodes: Resistance to biofouling

    International Nuclear Information System (INIS)

    Trouillon, Raphael; O'Hare, Danny

    2010-01-01

    Carbon based electrodes are widely used for in vivo and in vitro electrochemical studies. In particular, monoamine neurochemistry has been investigated using carbon microfibre electrodes. Similarly, glassy carbon (GC) is the preferred material for many biochemical applications, such as electrochemical detection in chromatography. More recently, boron doped diamond (BDD) has been utilized for biosensing, as its carbon sp 3 structure is expected to provide better resistance to analyte fouling. However, the main factor limiting the use of electrochemical sensors for biological studies is the effect of the biological matrix. Indeed, in vivo or in situ measurements expose the sensor to a complex matrix of proteins, which adsorb on the sensing surface and interfere with the electrochemical measurements. Here, we compare the performance of three carbon based electrodes: GC, GC with low surface oxides and BDD. The redox species ruthenium(III) hexaammine (outer-sphere), ferrocyanide (surface sensitive) and the biologically significant dopamine have been investigated in protein and blood-mimicking matrices. Cyclic voltammetry and electrochemical impedance spectroscopy have been used to examine the effect of spectator molecules and reaction products on electrode mechanisms. Our results show that BDD generally exhibits the best performance for most conditions and reactions and should therefore be preferred for measurements in biologically fouling environments. Furthermore, surface oxides seem also to improve resistance of the GC electrode to biofouling.

  2. The irradiation induced creep of graphite under accelerated damage produced by boron doping

    International Nuclear Information System (INIS)

    Brocklehurst, J.E.

    1975-01-01

    The presence of boron enhances fast neutron irradiation damage in graphite by providing nucleation sites for interstitial loop formation. Doping with 11 B casues an increase in the irradiation induced macroscopic dimensional changes, which have been shown to result from an acceleration in the differential crystal growth rate for a given carbon atom displacement rate. Models of irradiation induced creep in graphite have centred around those in which creep is induced by internal stresses due to the anisotopic crystal growth, and those in which creep is activated by atomic displacements. A creep test on boron doped graphite has been performed in an attempt to establish which of these mechanisms is the determining factor. An isotropic nuclear graphite was doped to a 11 B concentration of 0.27 wt.%. The irradiation induced volume shrinkage rate at 750 0 C increased by a factor of 3 over that of the virgin graphite, in agreement with predictions from the earlier work, but the total creep strains were comparable in both doped and virgin samples. This observation supports the view that irradiation induced creep is dependent only on the carbon atom displacement rate and not on the internal stress level determined by the differential crystal growth rate. The implications of this result on the irradiation behaviour of graphite containing significant concentrations of boron are briefly discussed. (author)

  3. Amperometric Determination of Sulfite by Gas Diffusion- Sequential Injection with Boron-Doped Diamond Electrode

    Directory of Open Access Journals (Sweden)

    Orawon Chailapakul

    2008-03-01

    Full Text Available A gas diffusion sequential injection system with amperometric detection using aboron-doped diamond electrode was developed for the determination of sulfite. A gasdiffusion unit (GDU was used to prevent interference from sample matrices for theelectrochemical measurement. The sample was mixed with an acid solution to generategaseous sulfur dioxide prior to its passage through the donor channel of the GDU. Thesulfur dioxide diffused through the PTFE hydrophobic membrane into a carrier solution of 0.1 M phosphate buffer (pH 8/0.1% sodium dodecyl sulfate in the acceptor channel of theGDU and turned to sulfite. Then the sulfite was carried to the electrochemical flow cell anddetected directly by amperometry using the boron-doped diamond electrode at 0.95 V(versus Ag/AgCl. Sodium dodecyl sulfate was added to the carrier solution to preventelectrode fouling. This method was applicable in the concentration range of 0.2-20 mgSO32−/L and a detection limit (S/N = 3 of 0.05 mg SO32−/L was achieved. This method wassuccessfully applied to the determination of sulfite in wines and the analytical resultsagreed well with those obtained by iodimetric titration. The relative standard deviations forthe analysis of sulfite in wines were in the range of 1.0-4.1 %. The sampling frequency was65 h−1.

  4. Boron-doped nanocrystalline diamond microelectrode arrays monitor cardiac action potentials.

    Science.gov (United States)

    Maybeck, Vanessa; Edgington, Robert; Bongrain, Alexandre; Welch, Joseph O; Scorsone, Emanuel; Bergonzo, Philippe; Jackman, Richard B; Offenhäusser, Andreas

    2014-02-01

    The expansion of diamond-based electronics in the area of biological interfacing has not been as thoroughly explored as applications in electrochemical sensing. However, the biocompatibility of diamond, large safe electrochemical window, stability, and tunable electronic properties provide opportunities to develop new devices for interfacing with electrogenic cells. Here, the fabrication of microelectrode arrays (MEAs) with boron-doped nanocrystalline diamond (BNCD) electrodes and their interfacing with cardiomyocyte-like HL-1 cells to detect cardiac action potentials are presented. A nonreductive means of structuring doped and undoped diamond on the same substrate is shown. The resulting BNCD electrodes show high stability under mechanical stress generated by the cells. It is shown that by fabricating the entire surface of the MEA with NCD, in patterns of conductive doped, and isolating undoped regions, signal detection may be improved up to four-fold over BNCD electrodes passivated with traditional isolators. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Anodic voltammetry of zolmitriptan at boron-doped diamond electrode and its analytical applications.

    Science.gov (United States)

    Uslu, B; Canbaz, D

    2010-04-01

    The electrooxidative behavior and determination of zolmitriptan at a boron-doped diamond electrode were investigated using cyclic, linear sweep, differential pulse and square wave voltammetric techniques. Zolmitriptan undergoes irreversible oxidation at a peak potential of about +0.9 V (vs Ag/AgCl/3 M KCl). DPV and SWV techniques are proposed for the determination of zolmitriptan in phosphate buffer at pH 3.03, which allows quantitation over the two different ranges (8 x 10(-7) - 8 x 10(-6) M and 1 x 10(-5) - 1 x 10(-4) M) in supporting electrolyte for both methods. A linear response was obtained in phosphate buffer over two different ranges (6 x 10(-7) - 8 x 10(-6) M and 1 x 10(-5) - 1 x 10(-4) M) for spiked serum samples at pH 3.03 for both techniques. The repeatability and reproducibility of the methods for all media were determined. The standard addition method was used in serum. Precision and accuracy were also checked in all media. No electroactive interferences from the excipients and endegenous substances were found in the pharmaceutical dosage form and the biological sample, respectively.

  6. Boron-doped diamond electrode: synthesis, characterization, functionalization and analytical applications.

    Science.gov (United States)

    Luong, John H T; Male, Keith B; Glennon, Jeremy D

    2009-10-01

    In recent years, conductive diamond electrodes for electrochemical applications have been a major focus of research and development. The impetus behind such endeavors could be attributed to their wide potential window, low background current, chemical inertness, and mechanical durability. Several analytes can be oxidized by conducting diamond compared to other carbon-based materials before the breakdown of water in aqueous electrolytes. This is important for detecting and/or identifying species in solution since oxygen and hydrogen evolution do not interfere with the analysis. Thus, conductive diamond electrodes take electrochemical detection into new areas and extend their usefulness to analytes which are not feasible with conventional electrode materials. Different types of diamond electrodes, polycrystalline, microcrystalline, nanocrystalline and ultrananocrystalline, have been synthesized and characterized. Of particular interest is the synthesis of boron-doped diamond (BDD) films by chemical vapor deposition on various substrates. In the tetrahedral diamond lattice, each carbon atom is covalently bonded to its neighbors forming an extremely robust crystalline structure. Some carbon atoms in the lattice are substituted with boron to provide electrical conductivity. Modification strategies of doped diamond electrodes with metallic nanoparticles and/or electropolymerized films are of importance to impart novel characteristics or to improve the performance of diamond electrodes. Biofunctionalization of diamond films is also feasible to foster several useful bioanalytical applications. A plethora of opportunities for nanoscale analytical devices based on conducting diamond is anticipated in the very near future.

  7. Plasma etching treatment for surface modification of boron-doped diamond electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Kondo, Takeshi [Department of Industrial Chemistry, Faculty of Engineering, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601 (Japan); Ito, Hiroyuki [Department of Industrial Chemistry, Faculty of Engineering, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601 (Japan); Kusakabe, Kazuhide [Department of Applied Physics, Faculty of Science, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601 (Japan); Ohkawa, Kazuhiro [Department of Applied Physics, Faculty of Science, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601 (Japan); Einaga, Yasuaki [Department of Chemistry, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Yokohama 223-8522 (Japan); Fujishima, Akira [Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu-ku, Kawasaki, Kanagawa 213-0012 (Japan); Kawai, Takeshi [Department of Industrial Chemistry, Faculty of Engineering, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601 (Japan)]. E-mail: kawai@ci.kagu.tus.ac.jp

    2007-03-01

    Boron-doped diamond (BDD) thin film surfaces were modified by brief plasma treatment using various source gases such as Cl{sub 2}, CF{sub 4}, Ar and CH{sub 4}, and the electrochemical properties of the surfaces were subsequently investigated. From X-ray photoelectron spectroscopy analysis, Cl and F atoms were detected on the BDD surfaces after 3 min of Cl{sub 2} and CF{sub 4} plasma treatments, respectively. From the results of cyclic voltammetry and electrochemical AC impedance measurements, the electron-transfer rate for Fe(CN){sub 6} {sup 3-/4-} and Fe{sup 2+/3+} at the BDD electrodes was found to decrease after Cl{sub 2} and CF{sub 4} plasma treatments. However, the electron-transfer rate for Ru(NH{sub 3}){sub 6} {sup 2+/3+} showed almost no change after these treatments. This may have been related to the specific interactions of surface halogen (C-Cl and C-F) moieties with the redox species because no electrical passivation was observed after the treatments. In addition, Raman spectroscopy showed that CH{sub 4} plasma treatment of diamond surfaces formed an insulating diamond-like carbon thin layer on the surfaces. Thus, by an appropriate choice of plasma source, short-duration plasma treatments can be an effective way to functionalize diamond surfaces in various ways while maintaining a wide potential window and a low background current.

  8. The atomic and electronic structure of nitrogen- and boron-doped phosphorene.

    Science.gov (United States)

    Boukhvalov, Danil W

    2015-10-28

    First principles modeling of nitrogen- and boron-doped phosphorene demonstrates the tendency toward the formation of highly ordered structures. Nitrogen doping leads to the formation of -N-P-P-P-N- lines. Further transformation into -P-N-P-N- lines across the chains of phosphorene occurs with increasing band gap and increasing nitrogen concentration, which coincides with the decreasing chemical activity of N-doped phosphorene. In contrast to the case of nitrogen, boron atoms prefer to form -B-B- pairs with the further formation of -P-P-B-B-P-P- patterns along the phosphorene chains. The low concentration of boron dopants converts the phosphorene from a semiconductor into a semimetal with the simultaneous enhancement of its chemical activity. Co-doping of phosphorene by both boron and nitrogen starts from the formation of -B-N- pairs, which provides flat bands and further transformation of these pairs into hexagonal BN lines and ribbons across the phosphorene chains.

  9. Fabrication of Nickel/nanodiamond/boron-doped diamond electrode for non-enzymatic glucose biosensor

    International Nuclear Information System (INIS)

    Dai, Wei; Li, Mingji; Gao, Sumei; Li, Hongji; Li, Cuiping; Xu, Sheng; Wu, Xiaoguo; Yang, Baohe

    2016-01-01

    Highlights: • Nanodiamonds (NDs) were electrophoretically deposited on the BDD film. • The NDs significantly extended the potential window. • Ni/NDs/BDD electrode was prepared by electrodeposition. • The electrode shows good catalytic activity for glucose oxidation. - Abstract: A stable and sensitive non-enzymatic glucose sensor was prepared by modifying a boron-doped diamond (BDD) electrode with nickel (Ni) nanosheets and nanodiamonds (NDs). The NDs were electrophoretically deposited on the BDD surface, and acted as nucleation sites for the subsequent electrodeposition of Ni. The morphology and composition of the modified BDD electrodes were characterized by field-emission scanning electron microscopy and energy-dispersive X-ray spectroscopy, respectively. The Ni nanosheet-ND modified BDD electrode exhibited good current response towards the non-enzymatic oxidation of glucose in alkaline media. The NDs significantly extended the potential window. The response to glucose was linear over the 0.2–1055.4-μM range. The limit of detection was 0.05 μM, at a signal-to-noise ratio of 3. The Ni nanosheet-ND/BDD electrode exhibited good selectivity, reproducibility and stability. Its electrochemical performance, low cost and simple preparation make it a promising non-enzymatic glucose sensor.

  10. Optical and electrical properties of boron doped diamond thin conductive films deposited on fused silica glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ficek, M.; Sobaszek, M.; Gnyba, M. [Department of Metrology and Optoelectronics, Gdansk University of Technology, 11/12G. Narutowicza St., 80-233 Gdansk (Poland); Ryl, J. [Department of Electrochemistry, Corrosion and Material Engineering, Gdansk University of Technology, 11/12 Narutowicza St., 80-233 Gdansk (Poland); Gołuński, Ł. [Department of Metrology and Optoelectronics, Gdansk University of Technology, 11/12G. Narutowicza St., 80-233 Gdansk (Poland); Smietana, M.; Jasiński, J. [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, 75 Koszykowa St., 00-662 Warsaw (Poland); Caban, P. [Institute of Electronic Materials Technology, 133 Wolczynska St., 01-919 Warsaw (Poland); Bogdanowicz, R., E-mail: rbogdan@eti.pg.gda.pl [Department of Metrology and Optoelectronics, Gdansk University of Technology, 11/12G. Narutowicza St., 80-233 Gdansk (Poland); Materials and Process Simulation Center, California Institute of Technology, Pasadena, CA 91125 (United States)

    2016-11-30

    Highlights: • Growth of 60% of transmittance diamond films with resistivity as low as 48 Ω cm. • Two step seeding process of fused silica: plasma hydrogenation and wet seeding. • Nanodiamond seeding density of 2 × 10{sup 10} cm{sup −2} at fused silica substrates. • High refractive index (2.4 @550 nm) was achieved for BDD films deposited at 500 °C. - Abstract: This paper presents boron-doped diamond (BDD) film as a conductive coating for optical and electronic purposes. Seeding and growth processes of thin diamond films on fused silica have been investigated. Growth processes of thin diamond films on fused silica were investigated at various boron doping level and methane admixture. Two step pre-treatment procedure of fused silica substrate was applied to achieve high seeding density. First, the substrates undergo the hydrogen plasma treatment then spin-coating seeding using a dispersion consisting of detonation nanodiamond in dimethyl sulfoxide with polyvinyl alcohol was applied. Such an approach results in seeding density of 2 × 10{sup 10} cm{sup −2}. The scanning electron microscopy images showed homogenous, continuous and polycrystalline surface morphology with minimal grain size of 200 nm for highly boron doped films. The sp{sup 3}/sp{sup 2} ratio was calculated using Raman spectra deconvolution method. A high refractive index (range of 2.0–2.4 @550 nm) was achieved for BDD films deposited at 500 °C. The values of extinction coefficient were below 0.1 at λ = 550 nm, indicating low absorption of the film. The fabricated BDD thin films displayed resistivity below 48 Ohm cm and transmittance over 60% in the visible wavelength range.

  11. Anodic stripping voltammetry of synthesized CdS nanoparticles at boron-doped diamond electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Hayat, Mohammad; Ivandini, Tribidasari A., E-mail: ivandini.tri@sci.ui.ac.id; Saepudin, Endang [Department of Chemistry, FMIPA, Universitas Indonesia, Kampus UI Depok (Indonesia); Einaga, Yasuaki [Department of Chemistry, Keio University (Japan)

    2016-04-19

    Cadmium sulphide (CdS) nanoparticles were chemically synthesized using reverse micelles microreactor methods. By using different washing treatments, UV-Vis spectroscopy showed that the absorption peaks appeared at 465 nm, 462 nm, 460 nm, and 459 nm respectively for CdS nanoparticles without and with 1, 2, and 3 times washing treatments using pure water. In comparison with the absorbance peak of bulk CdS at 512 nm, the shifted absorption peaks, indicates that the different sizes of CdS can be prepared. Anodic stripping voltammetry of the CdS nanoparticles was then studied at a boron-doped diamond electrode using 0.1 M KClO{sub 4} and 0.1 M HClO{sub 4} as the electrolytes. A scan rate of 100 mV/s with a deposition potential of -1000 mV (vs. Ag/AgCl) for 60 s at a potential scan from -1600 mV to +800 mV (vs. Ag/AgCl) was applied as the optimum condition of the measurements. Highly-accurate linear calibration curves (R{sup 2} = 0.99) in 0.1 M HClO{sub 4} with the sensitivity of 0.075 mA/mM and the limit of detection of 81 µM in 0.1 M HClO{sub 4} can be achieved, which is promising for an application of CdS nanoparticles as a label for biosensors.

  12. Electrical conductivity enhancement by boron-doping in diamond using first principle calculations

    Science.gov (United States)

    Ullah, Mahtab; Ahmed, Ejaz; Hussain, Fayyaz; Rana, Anwar Manzoor; Raza, Rizwan

    2015-04-01

    Boron doping in diamond plays a vital role in enhancing electrical conductivity of diamond by making it a semiconductor, a conductor or even a superconductor. To elucidate this fact, partial and total density of states has been determined as a function of B-content in diamond. Moreover, the orbital charge distributions, B-C bond lengths and their population have been studied for B-doping in pristine diamond thin films by applying density functional theory (DFT). These parameters have been found to be influenced by the addition of different percentages of boron atoms in diamond. The electronic density of states, B-C bond situations as well as variations in electrical conductivities of diamond films with different boron content and determination of some relationship between these parameters were the basic tasks of this study. Diamond with high boron concentration (∼5.88% B-atoms) showed maximum splitting of energy bands (caused by acceptor impurity states) at the Fermi level which resulted in the enhancement of electron/ion conductivities. Because B atoms either substitute carbon atoms and/or assemble at grain boundaries (interstitial sites) inducing impurity levels close to the top of the valence band. At very high B-concentration, impurity states combine to form an impurity band which accesses the top of the valence band yielding metal like conductivity. Moreover, bond length and charge distributions are found to decrease with increase in boron percentage in diamond. It is noted that charge distribution decreased from +1.89 to -1.90 eV whereas bond length reduced by 0.04 Å with increasing boron content in diamond films. These theoretical results support our earlier experimental findings on B-doped diamond polycrystalline films which depict that the addition of boron atoms to diamond films gives a sudden fall in resistivity even up to 105 Ω cm making it a good semiconductor for its applications in electrical devices.

  13. Boron-doped diamond electrodes for the electrochemical oxidation and cleavage of peptides.

    Science.gov (United States)

    Roeser, Julien; Alting, Niels F A; Permentier, Hjalmar P; Bruins, Andries P; Bischoff, Rainer

    2013-07-16

    Electrochemical oxidation of peptides and proteins is traditionally performed on carbon-based electrodes. Adsorption caused by the affinity of hydrophobic and aromatic amino acids toward these surfaces leads to electrode fouling. We compared the performance of boron-doped diamond (BDD) and glassy carbon (GC) electrodes for the electrochemical oxidation and cleavage of peptides. An optimal working potential of 2000 mV was chosen to ensure oxidation of peptides on BDD by electron transfer processes only. Oxidation by electrogenerated OH radicals took place above 2500 mV on BDD, which is undesirable if cleavage of a peptide is to be achieved. BDD showed improved cleavage yield and reduced adsorption for a set of small peptides, some of which had been previously shown to undergo electrochemical cleavage C-terminal to tyrosine (Tyr) and tryptophan (Trp) on porous carbon electrodes. Repeated oxidation with BDD electrodes resulted in progressively lower conversion yields due to a change in surface termination. Cathodic pretreatment of BDD at a negative potential in an acidic environment successfully regenerated the electrode surface and allowed for repeatable reactions over extended periods of time. BDD electrodes are a promising alternative to GC electrodes in terms of reduced adsorption and fouling and the possibility to regenerate them for consistent high-yield electrochemical cleavage of peptides. The fact that OH-radicals can be produced by anodic oxidation of water at elevated positive potentials is an additional advantage as they allow another set of oxidative reactions in analogy to the Fenton reaction, thus widening the scope of electrochemistry in protein and peptide chemistry and analytics.

  14. Degradation of microcystin-RR using boron-doped diamond electrode

    International Nuclear Information System (INIS)

    Zhang Chunyong; Fu Degang; Gu Zhongze

    2009-01-01

    Microcystins (MCs), produced by blue-green algae, are one of the most common naturally occurring toxins found in natural environment. The presence of MCs in drinking water sources poses a great threat to people's health. In this study, the degradation behavior of microcystin-RR on boron-doped diamond (BDD) electrode was investigated under galvanostatic conditions. Such parameters as reaction time, supporting electrolyte and applied current density were varied in order to determine their effects on this oxidation process. The experimental results revealed the suitability of electrochemical processes employing BDD electrode for removing MC-RR from the solution. However, the efficient removal of MC-RR only occurred in the presence of sodium chloride that acted as redox mediators and the reaction was mainly affected by the chloride concentration (c NaCl ) and applied current density (I appl ). Full and quick removal of 0.50 μg/ml MC-RR in solution was achieved when the operating conditions of c NaCl and I appl were 20 mM and 46.3 mA/cm 2 , or 35 mM and 18.2 mA/cm 2 respectively. The kinetics for MC-RR degradation followed a pesudo-first order reaction in most cases, indicating the process was under mass transfer control. As a result of its excellent performance, the BDD technology could be considered as a promising alternative to promote the degradation of MC-RR than chlorination in drinking water supplies.

  15. Electrochemical oxidation and electroanalytical determination of xylitol at a boron-doped diamond electrode.

    Science.gov (United States)

    Lourenço, Anabel S; Sanches, Fátima A C; Magalhães, Renata R; Costa, Daniel J E; Ribeiro, Williame F; Bichinho, Kátia M; Salazar-Banda, Giancarlo R; Araújo, Mário C U

    2014-02-01

    Xylitol is a reduced sugar with anticariogenic properties used by insulin-dependent diabetics, and which has attracted great attention of the pharmaceutical, cosmetics, food and dental industries. The detection of xylitol in different matrices is generally based on separation techniques. Alternatively, in this paper, the application of a boron-doped diamond (BDD) electrode allied to differing voltammetric techniques is presented to study the electrochemical behavior of xylitol, and to develop an analytical methodology for its determination in mouthwash. Xylitol undergoes two oxidation steps in an irreversible diffusion-controlled process (D=5.05 × 10(-5)cm(2)s(-1)). Differential pulse voltammetry studies revealed that the oxidation mechanism for peaks P1 (3.4 ≤ pH ≤ 8.0), and P2 (6.0 ≤ pH ≤ 9.0) involves transfer of 1H(+)/1e(-), and 1e(-) alone, respectively. The oxidation process P1 is mediated by the (•)OH generated at the BDD hydrogen-terminated surface. The maximum peak current was obtained at a pH of 7.0, and the electroanalytical method developed, (employing square wave voltammetry) yielded low detection (1.3 × 10(-6) mol L(-1)), and quantification (4.5 × 10(-6) mol L(-1)) limits, associated with good levels of repeatability (4.7%), and reproducibility (5.3%); thus demonstrating the viability of the methodology for detection of xylitol in biological samples containing low concentrations. © 2013 Elsevier B.V. All rights reserved.

  16. In situ boron doping during heteroepitaxial growth of diamond on Ir/YSZ/Si

    Energy Technology Data Exchange (ETDEWEB)

    Sartori, Andre F.; Fischer, Martin; Gsell, Stefan; Schreck, Matthias [Universitaet Augsburg, Institut fuer Physik, 86135 Augsburg (Germany)

    2012-09-15

    In situ boron doping of heteroepitaxial diamond films grown by microwave plasma chemical vapor deposition on Ir/YSZ/Si (001) is investigated. The study comprises the analysis of the gas phase by optical emission spectroscopy (OES) and measurements of B doped films by secondary ion mass spectroscopy (SIMS), cathodoluminescence (CL), and X-ray diffraction (XRD). The OE intensity of BH species scales linearly with the concentration of the boron precursor trimethylboron (TMB) in the feed gas. Addition of CO{sub 2} as an oxygen source causes a proportional reduction of the BH signal. At a ratio C:O = 1, a reduction factor of {proportional_to}50 is obtained. It is shown for two diamond samples that the boron incorporation drops nearly identical to the BH emission intensity. We conclude that the influence of oxygen on boron incorporation is a pure gas phase effect. In contrast, CN and BH emission indicate a negligible interaction between N{sub 2} and TMB added to the feed gas. At the same time, preliminary growth rate measurements show that the boron background pressure in the chamber after growth with TMB completely cancels the growth acceleration by nitrogen up to N{sub 2} concentrations of 100 ppm which points to the dominance of surface processes. Heteroepitaxial diamond films grown on Ir at 50 mbar between 720 and 900 C contain high intrinsic stress that varies from -2.2 GPa compressive at the lowest to slightly tensile at the highest deposition temperature. The observed behavior is similar to former work at 200 mbar in which effective climb of dislocations was suggested as responsible mechanism. Addition of boron rather enhances the stress formation than causing a relaxation. The B concentration in the heteroepitaxial films is deduced by SIMS, CL, and XRD and correlated with the TMB concentration in the gas phase. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Electrochemical Properties of Boron-Doped Fullerene Derivatives for Lithium-Ion Battery Applications.

    Science.gov (United States)

    Sood, Parveen; Kim, Ki Chul; Jang, Seung Soon

    2018-03-19

    The high electron affinity of fullerene C 60 coupled with the rich chemistry of carbon makes it a promising material for cathode applications in lithium-ion batteries. Since boron has one electron less than carbon, the presence of boron on C 60 cages is expected to generate electron deficiency in C 60 , and thereby to enhance its electron affinity. By using density functional theory (DFT), we studied the redox potentials and electronic properties of C 60 and C 59 B. We have found that doping C 60 with one boron atom results in a substantial increase in redox potential from 2.462 V to 3.709 V, which was attributed to the formation of an open shell system. We also investigated the redox and electronic properties of C 59 B functionalized with various redox-active oxygen containing functional groups (OCFGs). For the combination of functionalization with OCFGs and boron doping, it is found that the enhancement of redox potential is reduced, which is mainly attributed to the open shell structure being changed to a closed-shell one. Nevertheless, the redox potentials are still higher than that of pristine C 60 . From the observation that the lowest unoccupied molecular orbital of closed-shell OCFG- functionalized C 59 B is correlated well with the redox potential, it was confirmed that the spin state is crucial to be considered to understand the relationship between electronic structure and redox properties. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Fluorination of Boron-Doped Diamond Film Electrodes for Minimization of Perchlorate Formation.

    Science.gov (United States)

    Gayen, Pralay; Chaplin, Brian P

    2017-08-23

    This research investigated the effects of surface fluorination on both rates of organic compound oxidation (phenol and terephthalic acid (TA)) and ClO 4 - formation at boron-doped diamond (BDD) film anodes at 22 °C. Different fluorination methods (i.e., electrochemical oxidation with perfluorooctanoic acid (PFOA), radio frequency plasma, and silanization) were used to incorporate fluorinated moieties on the BDD surface, which was confirmed by X-ray photoelectron spectroscopy (XPS). The silanization method was found to be the most effective fluorination method using a 1H,1H,2H,2H-perfluorodecyltrichlorosilane precursor to form a self-assembled monolayer (SAM) on the oxygenated BDD surface. The ClO 4 - formation decreased from rates of 0.45 ± 0.03 mmol m -2 min -1 during 1 mM NaClO 3 oxidation and 0.28 ± 0.01 mmol m -2 min -1 during 10 mM NaCl oxidation on the BDD electrode to below detectable levels (layer on the BDD surface that inhibited charge transfer via steric hindrance and hydrophobic effects. The surface coverages and thicknesses of the fluorinated films controlled the charge transfer rates, which was confirmed by estimates of film thicknesses using XPS and density functional theory simulations. The aliphatic silanized electrode also showed very high stability during OH • production. Perchlorate formation rates were below the detection limit (<0.12 μmoles m -2 min -1 ) for up to 10 consecutive NaClO 3 oxidation experiments.

  19. Monitoring of peptide induced disruption of artificial lipid membrane constructed on boron-doped nanocrystalline diamond by electrochemical impedance spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Petrák, V.; Grieten, L.; Taylor, Andrew; Fendrych, František; Ledvina, Miroslav; Janssens, S. D.; Nesládek, M.; Haenen, K.; Wagner, P.

    2011-01-01

    Roč. 208, č. 9 (2011), s. 2099-2103 ISSN 1862-6300 R&D Projects : GA AV ČR KAN200100801; GA AV ČR(CZ) KAN400480701; GA MŠk(CZ) LD11076 Grant - others:European RD projects (XE) 238201-MATCON Institutional research plan: CEZ:AV0Z40550506; CEZ:AV0Z10100520 Keywords : biosensor * boron-doped nanocrystalline diamond * electrochemical impedance spectroscopy Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.463, year: 2011

  20. Highly transparent and conducting boron doped zinc oxide films for window of Dye Sensitized Solar Cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Vinod, E-mail: vinod.phy@gmail.com [Materials Science Group, Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Department of Physics, Gurukula Kangri University, Haridwar 249404 (India); Singh, R.G. [Department of Electronic Science, Maharaja Agrasen College University of Delhi, New Delhi 110096 (India); Singh, Fouran [Materials Science Group, Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Purohit, L.P. [Department of Physics, Gurukula Kangri University, Haridwar 249404 (India)

    2012-12-15

    Highlights: Black-Right-Pointing-Pointer Synthesis of Boron doped ZnO (ZnO:B) films. Black-Right-Pointing-Pointer Minimum of resistivity is observed to be 7.9 Multiplication-Sign 10{sup -4} {Omega} cm. Black-Right-Pointing-Pointer Maximum transmittance {approx}91% for 450 Degree-Sign C annealed films. Black-Right-Pointing-Pointer Applicable for window materials in Dye Sensitized Solar Cell. - Abstract: Highly transparent and conducting boron doped zinc oxide (ZnO:B) films grown by sol-gel method are reported. The annealing temperature is varied from 350 to 550 Degree-Sign C and doping concentration of boron is kept fixed for 0.6 at.% for all the films. At low temperature the stress in the films is compressive, which becomes tensile for the films annealed at higher temperature. A minimum resistivity of 7.9 Multiplication-Sign 10{sup -4} {Omega} cm and maximum transmittance of {approx}91% are observed for the film annealed at 450 Degree-Sign C. This could be attributed to minimum stress of films, which is further evident by the evolution of A{sub 1} and defect related Raman modes without any shifting in its position. Such kind of highly transparent and conducting ZnO:B thin film could be used as window material in Dye Sensitized Solar Cell (DSSC).

  1. CE with a boron-doped diamond electrode for trace detection of endocrine disruptors in water samples.

    Science.gov (United States)

    Browne, Damien J; Zhou, Lin; Luong, John H T; Glennon, Jeremy D

    2013-07-01

    Off-line SPE and CE coupled with electrochemical detection have been used for the determination of bisphenol A (BPA), bisphenol F, 4-ethylphenol, and bisphenol A diglycidyl ether in bottled drinking water. The use of boron-doped diamond electrode as an electrochemical detector in amperometric mode that provides a favorable analytical performance for detecting these endocrine-disrupting compounds, such as lower noise levels, higher peak resolution with enhanced sensitivity, and improved resistance against electrode passivation. The oxidative electrochemical detection of the endocrine-disrupting compounds was accomplished by boron-doped diamond electrode poised at +1.4 V versus Ag/AgCl without electrode pretreatment. An off-line SPE procedure (Bond Elut® C18 SPE cartridge) was utilized to extract and preconcentrate the compounds prior to separation and detection. The minimum concentration detectable for all four compounds ranged from 0.01 to 0.06 μM, having S/N equal to three. After exposing the plastic bottle water container under sunlight for 7 days, the estimated concentration of BPA in the bottled drinking water was estimated to be 0.03 μM. This proposed approach has great potential for rapid and effective determination of BPA content present in water packaging of plastic bottles that have been exposed to sunlight for an extended period of time. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Boron doped diamond sensor for sensitive determination of metronidazole: Mechanistic and analytical study by cyclic voltammetry and square wave voltammetry

    Energy Technology Data Exchange (ETDEWEB)

    Ammar, Hafedh Belhadj, E-mail: hbelhadjammar@yahoo.fr; Brahim, Mabrouk Ben; Abdelhédi, Ridha; Samet, Youssef

    2016-02-01

    The performance of boron-doped diamond (BDD) electrode for the detection of metronidazole (MTZ) as the most important drug of the group of 5-nitroimidazole was proven using cyclic voltammetry (CV) and square wave voltammetry (SWV) techniques. A comparison study between BDD, glassy carbon and silver electrodes on the electrochemical response was carried out. The process is pH-dependent. In neutral and alkaline media, one irreversible reduction peak related to the hydroxylamine derivative formation was registered, involving a total of four electrons. In acidic medium, a prepeak appears probably related to the adsorption affinity of hydroxylamine at the electrode surface. The BDD electrode showed higher sensitivity and reproducibility analytical response, compared with the other electrodes. The higher reduction peak current was registered at pH 11. Under optimal conditions, a linear analytical curve was obtained for the MTZ concentration in the range of 0.2–4.2 μmol L{sup −1}, with a detection limit of 0.065 μmol L{sup −1}. - Highlights: • SWV for the determination of MTZ • Boron-doped diamond as a new electrochemical sensor • Simple and rapid detection of MTZ • Efficiency of BDD for sensitive determination of MTZ.

  3. Boron doped diamond sensor for sensitive determination of metronidazole: Mechanistic and analytical study by cyclic voltammetry and square wave voltammetry

    International Nuclear Information System (INIS)

    Ammar, Hafedh Belhadj; Brahim, Mabrouk Ben; Abdelhédi, Ridha; Samet, Youssef

    2016-01-01

    The performance of boron-doped diamond (BDD) electrode for the detection of metronidazole (MTZ) as the most important drug of the group of 5-nitroimidazole was proven using cyclic voltammetry (CV) and square wave voltammetry (SWV) techniques. A comparison study between BDD, glassy carbon and silver electrodes on the electrochemical response was carried out. The process is pH-dependent. In neutral and alkaline media, one irreversible reduction peak related to the hydroxylamine derivative formation was registered, involving a total of four electrons. In acidic medium, a prepeak appears probably related to the adsorption affinity of hydroxylamine at the electrode surface. The BDD electrode showed higher sensitivity and reproducibility analytical response, compared with the other electrodes. The higher reduction peak current was registered at pH 11. Under optimal conditions, a linear analytical curve was obtained for the MTZ concentration in the range of 0.2–4.2 μmol L"−"1, with a detection limit of 0.065 μmol L"−"1. - Highlights: • SWV for the determination of MTZ • Boron-doped diamond as a new electrochemical sensor • Simple and rapid detection of MTZ • Efficiency of BDD for sensitive determination of MTZ

  4. Boron-doped zinc oxide thin films for large-area solar cells grown by metal organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Chen, X.L.; Xu, B.H.; Xue, J.M.; Zhao, Y.; Wei, C.C.; Sun, J.; Wang, Y.; Zhang, X.D.; Geng, X.H.

    2007-01-01

    Boron-doped zinc oxide (ZnO:B) films were grown by metal organic chemical vapor deposition using diethylzinc (DEZn), and H 2 O as reactant gases and diborane (B 2 H 6 ) as an n-type dopant gas. The structural, electrical and optical properties of ZnO films doped at different B 2 H 6 flow rates were investigated. X-ray diffraction spectra and scanning electron microscopy images indicate that boron-doping plays an important role on the microstructure of ZnO films, which induced textured morphology. With optimized conditions, low sheet resistance (∼ 30 Ω/□), high transparency (> 85% in the visible light and infrared range) and high mobility (17.8 cm 2 V -1 s -1 ) were obtained for 700-nm ZnO:B films deposited on 20 cm x 20 cm glass substrates at the temperature of 443 K. After long-term exposure in air, the ZnO:B films also showed a better electrical stability than the un-doped samples. With the application of ZnO:B/Al back contacts, the short circuit current density was effectively enhanced by about 3 mA/cm 2 for a small area a-Si:H cell and a high efficiency of 9.1% was obtained for a large-area (20 cm x 20 cm) a-Si solar module

  5. Assessment of Electrodes Prepared from Wafers of Boron-doped Diamond for the Electrochemical Oxidation of Waste Lubricants

    International Nuclear Information System (INIS)

    Taylor, G.T.; Sullivan, I.A.; Newey, A.W.E.

    2006-01-01

    Electrochemical oxidation using boron-doped diamond electrodes is being investigated as a treatment process for radioactively contaminated oily wastes. Previously, it was shown that electrodes coated with a thin film of diamond were able to oxidise a cutting oil but not a mineral oil. These tests were inconclusive, because the electrodes lost their diamond coating during operation. Accordingly, an electrode prepared from a 'solid' wafer of boron-doped diamond is being investigated to determine whether it will oxidise mineral oils. The electrode has been tested with sucrose, a cutting oil and an emulsified mineral oil. Before and after each test, the state of the electrode was assessed by cyclic voltammetry with the ferro/ferricyanide redox couple. Analysis of the cyclic voltammogram suggested that material accumulated on the surface of the electrode during the tests. The magnitude of the effect was in the order: - emulsified mineral oil > cutting oil > sucrose. Despite this, the results indicated that the electrode was capable of oxidising the emulsified mineral oil. Confirmatory tests were undertaken in the presence of alkali to trap the carbon dioxide, but they had to be abandoned when the adhesive holding the diamond in the electrode was attacked by the alkali. Etching of the diamond wafer was also observed at the end of the tests. Surface corrosion is now regarded as an intrinsic part of the electrochemical oxidation on diamond, and it is expected that the rate of attack will determine the service life of the electrodes. (authors)

  6. Evaluation of freestanding boron-doped diamond grown by chemical vapour deposition as substrates for vertical power electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Issaoui, R.; Achard, J.; Tallaire, A.; Silva, F.; Gicquel, A. [LSPM-CNRS (formerly LIMHP), Universite Paris 13, 99, Avenue Jean-Baptiste Clement, 93430 Villetaneuse (France); Bisaro, R.; Servet, B.; Garry, G. [Thales Research and Technology France, Campus de Polytechnique, 1 Avenue Augustin Fresnel, F-91767 Palaiseau Cedex (France); Barjon, J. [GEMaC-CNRS, Universite de Versailles Saint Quentin Batiment Fermat, 45 Avenue des Etats-Unis, 78035 Versailles Cedex (France)

    2012-03-19

    In this study, 4 x 4 mm{sup 2} freestanding boron-doped diamond single crystals with thickness up to 260 {mu}m have been fabricated by plasma assisted chemical vapour deposition. The boron concentrations measured by secondary ion mass spectroscopy were 10{sup 18} to 10{sup 20} cm{sup -3} which is in a good agreement with the values calculated from Fourier transform infrared spectroscopy analysis, thus indicating that almost all incorporated boron is electrically active. The dependence of lattice parameters and crystal mosaicity on boron concentrations have also been extracted from high resolution x-ray diffraction experiments on (004) planes. The widths of x-ray rocking curves have globally shown the high quality of the material despite a substantial broadening of the peak, indicating a decrease of structural quality with increasing boron doping levels. Finally, the suitability of these crystals for the development of vertical power electronic devices has been confirmed by four-point probe measurements from which electrical resistivities as low as 0.26 {Omega} cm have been obtained.

  7. Efficiency and stability of spectral sensitization of boron-doped-diamond electrodes through covalent anchoring of a donor–acceptor organic chromophore (P1)

    Czech Academy of Sciences Publication Activity Database

    Krýsová, Hana; Bartoň, Jan; Petrák, Václav; Jurok, R.; Kuchař, M.; Cígler, Petr; Kavan, Ladislav

    2016-01-01

    Roč. 18, č. 24 (2016), s. 16444-16450 ISSN 1463-9076 R&D Projects: GA ČR GA13-31783S Institutional support: RVO:61388955 ; RVO:61388963 ; RVO:68378271 Keywords : dye-sensitized solar cells * boron-doped diamond * nanoscale Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 4.123, year: 2016

  8. In vivo pH monitoring using boron doped diamond microelectrode and silver needles: Application to stomach disorder diagnosis

    Science.gov (United States)

    Fierro, Stéphane; Seishima, Ryo; Nagano, Osamu; Saya, Hideyuki; Einaga, Yasuaki

    2013-11-01

    This study presents the in vivo electrochemical monitoring of pH using boron doped diamond (BDD) microelectrode and silver needles for potential application in medical diagnosis. Accurate calibration curve for pH determination were obtained through in vitro electrochemical measurements. The increase induced in stomach pH by treatment with pantoprazole was used to demonstrate that it is possible to monitor the pH in vivo using the simple and noninvasive system proposed herein. Using the results of the in vivo and in vitro experiments, a quantitative analysis of the increase in stomach pH is also presented. It is proposed that the catheter-free pH monitoring system presented in this study could be potentially employed in any biological environment.

  9. Detection of trace levels of Pb2+ in tap water at boron-doped diamond electrodes with anodic stripping voltammetry

    International Nuclear Information System (INIS)

    Dragoe, Diana; Spataru, Nicolae; Kawasaki, Ryuji; Manivannan, Ayyakkannu; Spataru, Tanta; Tryk, Donald A.; Fujishima, Akira

    2006-01-01

    Boron-doped diamond (BDD) electrodes were used to investigate the possibility of detecting trace levels of lead by linear-sweep anodic stripping voltammetry. The low limit of detection (2 nM) is an advantage compared to other electrode materials, and it was found that at low pH values, copper concentrations that are usually present in drinking water do not affect to a large extent the detection of lead. These findings recommend anodic stripping voltammetry at the BDD electrodes as a suitable mercury-free method for the determination of trace levels of lead in drinking water. The results obtained for the lead detection in tap water real samples are in excellent agreement with those found by inductively coupled plasma-mass spectrometry (ICP-MS), demonstrating the practical analytical utility of the method

  10. Destination of organic pollutants during electrochemical oxidation of biologically-pretreated dye wastewater using boron-doped diamond anode.

    Science.gov (United States)

    Zhu, Xiuping; Ni, Jinren; Wei, Junjun; Xing, Xuan; Li, Hongna

    2011-05-15

    Electrochemical oxidation of biologically-pretreated dye wastewater was performed in a boron-doped diamond (BDD) anode system. After electrolysis of 12h, the COD was decreased from 532 to 99 mg L(-1) (destination of organic pollutants during electrochemical oxidation process was carefully investigated by molecular weight distribution measurement, resin fractionation, ultraviolet-visible spectroscopy, HPLC and GC-MS analysis, and toxicity test. As results, most organic pollutants were completely removed by electrochemical oxidation and the rest was primarily degraded to simpler compounds (e.g., carboxylic acids and short-chain alkanes) with less toxicity, which demonstrated that electrochemical oxidation of biologically-pretreated dye wastewater with BDD anode was very effective and safe. Especially, the performance of BDD anode system in degradation of large molecular organics such as humic substances makes it very promising in practical applications as an advanced treatment of biologically-pretreated wastewaters. Copyright © 2011 Elsevier B.V. All rights reserved.

  11. Destination of organic pollutants during electrochemical oxidation of biologically-pretreated dye wastewater using boron-doped diamond anode

    International Nuclear Information System (INIS)

    Zhu, Xiuping; Ni, Jinren; Wei, Junjun; Xing, Xuan; Li, Hongna

    2011-01-01

    Electrochemical oxidation of biologically-pretreated dye wastewater was performed in a boron-doped diamond (BDD) anode system. After electrolysis of 12 h, the COD was decreased from 532 to 99 mg L -1 ( -1 , the National Discharge Standard of China). More importantly, the destination of organic pollutants during electrochemical oxidation process was carefully investigated by molecular weight distribution measurement, resin fractionation, ultraviolet-visible spectroscopy, HPLC and GC-MS analysis, and toxicity test. As results, most organic pollutants were completely removed by electrochemical oxidation and the rest was primarily degraded to simpler compounds (e.g., carboxylic acids and short-chain alkanes) with less toxicity, which demonstrated that electrochemical oxidation of biologically-pretreated dye wastewater with BDD anode was very effective and safe. Especially, the performance of BDD anode system in degradation of large molecular organics such as humic substances makes it very promising in practical applications as an advanced treatment of biologically-pretreated wastewaters.

  12. Effect of the Channel Length on the Transport Characteristics of Transistors Based on Boron-Doped Graphene Ribbons

    Directory of Open Access Journals (Sweden)

    Paolo Marconcini

    2018-04-01

    Full Text Available Substitutional boron doping of devices based on graphene ribbons gives rise to a unipolar behavior, a mobility gap, and an increase of the I O N / I O F F ratio of the transistor. Here we study how this effect depends on the length of the doped channel. By means of self-consistent simulations based on a tight-binding description and a non-equilibrium Green’s function approach, we demonstrate a promising increase of the I O N / I O F F ratio with the length of the channel, as a consequence of the different transport regimes in the ON and OFF states. Therefore, the adoption of doped ribbons with longer aspect ratios could represent a significant step toward graphene-based transistors with an improved switching behavior.

  13. Giant magnetic anisotropy and robust quantum anomalous Hall effect in boron-doped graphene with Re-adsorption

    Science.gov (United States)

    Zhang, Kai-Cheng; Li, Yong-Feng; Liu, Yong; Zhu, Yan

    2018-04-01

    Recently topological materials have attracted much attention due to their quantization transports as well as edge states. It will be excellent to realize the robust quantum anomalous Hall transports in graphene-based devices. Using density-functional theory and tight-binding method, we investigated the structural, magnetic and topological properties for the boron-doped graphene with Re-adsorption. A large band-gap of 32.5 meV is opened by the Rashba spin-orbital coupling, and the band-gap is robust against the shape deformation of  ± 4% along the zigzag direction. Giant magnetic anisotropy emerges in this adsorption system together with the Fermi level lying in the band gap. Both the magnetic anisotropy and the band gap can be tuned by a moderate electric field. Calculations reveal that the system exhibits the quantization transports with the Chern number C=2 .

  14. Fabrication of boron-doped nanocrystalline diamond nanoflowers based on 3D Cu(OH){sub 2} dendritic architectures

    Energy Technology Data Exchange (ETDEWEB)

    Sim, Huijun; Hong, Sukin; Lee, Seungkoo; Lim, Daesoon; Jin, Juneon; Hwang, Sungwoo [Korea University, Seoul (Korea, Republic of)

    2012-03-15

    Hot-filament chemical vapor deposition (HFCVD) was used to prepare boron-doped nanocrystalline diamond (BDND) nanoflowers on a Cu substrate with a Cu(OH){sub 2} dendritic architecture that had been formed by using electrostatic self-assembly (ESA) method with nanodiamond particles. The formation of diamond nanoflowers is controlled by the reaction time between the Cu(OH){sub 2} nanoflowers and the polymeric linker for the electrostatic attachment of nanodiamonds and by the deposition time for CVD diamond growth with a high nucleation density. Through analysis by field emission scanning electron microscopy (FESEM) and Raman spectroscopy, the optimal conditions for the synthesis of BDND nanoflowers are determined, and a possible explanation is provided.

  15. Fabrication of boron-doped nanocrystalline diamond nanoflowers based on 3D Cu(OH)2 dendritic architectures

    International Nuclear Information System (INIS)

    Sim, Huijun; Hong, Sukin; Lee, Seungkoo; Lim, Daesoon; Jin, Juneon; Hwang, Sungwoo

    2012-01-01

    Hot-filament chemical vapor deposition (HFCVD) was used to prepare boron-doped nanocrystalline diamond (BDND) nanoflowers on a Cu substrate with a Cu(OH) 2 dendritic architecture that had been formed by using electrostatic self-assembly (ESA) method with nanodiamond particles. The formation of diamond nanoflowers is controlled by the reaction time between the Cu(OH) 2 nanoflowers and the polymeric linker for the electrostatic attachment of nanodiamonds and by the deposition time for CVD diamond growth with a high nucleation density. Through analysis by field emission scanning electron microscopy (FESEM) and Raman spectroscopy, the optimal conditions for the synthesis of BDND nanoflowers are determined, and a possible explanation is provided.

  16. Study of Electrochemical Oxidation and Quantification of the Pesticide Pirimicarb Using a Boron-Doped Diamond Electrode

    International Nuclear Information System (INIS)

    Selva, Thiago Matheus Guimarães; De Araujo, William Reis; Bacil, Raphael Prata; Paixão, Thiago Regis Longo Cesar

    2017-01-01

    Highlights: •A complete electro-oxidation mechanism of the pesticide Pirimicarb was proposed. •The electrochemical mechanism was supported by voltammetry techniques and mass spectrometry data. •An electroanalytical method using boron-doped diamond electrode was proposed to quantify Pirimicarb in natural waters. •The proposed analytical method is simple, low-cost, accurate and portable. -- Abstract: An electrochemical study of the carbamate pesticide pirimicarb (PMC), which acts on the central nervous system, was performed using a boron-doped diamond working electrode. Cyclic, differential pulse, and square-wave voltammetry experiments across a wide pH range (2.0 to 8.0) showed three irreversible oxidation processes in the voltammetric behavior of PMC. The two first processes were pH-dependent, while the third was not. The three oxidation process were independent of each other, and each involved the transfer of one electron. A reaction proposal for the electrochemical oxidation of PMC is shown, and it is supported by mass spectrometry experiments. After this, an analytical method for PMC quantification in water samples by differential pulse (DP) voltammetry is proposed. The optimal DP voltammetric parameters (step potential, amplitude potential, and scan rate) were optimized using experimental design, and an analytical curve was obtained from 2.0 to 219 μmol L −1 with an estimated detection limit of 1.24 μmol L −1 . The accuracy of the proposed method was evaluated by the addition and recovery method, with recoveries ranging from 88.6 to 96.3%. Some highlights of the proposed analytical method are its simplicity, reliability, and portability.

  17. High-rate and ultralong cycle-life LiFePO_4 nanocrystals coated by boron-doped carbon as positive electrode for lithium-ion batteries

    International Nuclear Information System (INIS)

    Feng, Jinpeng; Wang, Youlan

    2016-01-01

    Highlights: • B-doped carbon decorated LiFePO_4 has been fabricated for the first time. • The LiFePO_4@B-CdisplaysimprovedbatteryperformancecomparedtoLiFePO_4@C. • The LiFePO_4@B-C is good candidate for high-performance lithium-ion batteries. - Abstract: An evolutionary modification approach, boron-doped carbon coating, has been used to improve the electrochemical performances of positive electrodes for lithium-ion batteries, and demonstrates apparent and significant modification effects. In this study, the boron-doped carbon coating is firstly adopted and used to decorate the performance of LiFePO_4. The obtained composite exhibits a unique core-shell structure with an average diameter of 140 nm and a 4 nm thick boron-doped carbon shell that uniformly encapsulates the core. Owing to the boron element which could induce high amount of defects in the carbon, the electronic conductivity of LiFePO_4 is greatly ameliorated. Thus, the boron-doped composite shows superior rate capability and cycle stability than the undoped sample. For instance, the reversible specific capacity of LiFePO_4@B_0_._4-C can reach 164.1 mAh g"−"1 at 0.1C, which is approximately 96.5% of the theoretical capacity (170 mAh g"−"1). Even at high rate of 10C, it still shows a high specific capacity of 126.8 mAh g"−"1 and can be maintained at 124.5 mAh g"−"1 after 100 cycles with capacity retention ratio of about 98.2%. This outstanding Li-storage property enable the present design strategy to open up the possibility of fabricating the LiFePO_4@B-C composite for high-performance lithium-ion batteries.

  18. Occurrence of pharmaceuticals, illicit drugs, and resistant types of bacteria in hospital effluent and their effective degradation by boron-doped diamond electrodes

    Czech Academy of Sciences Publication Activity Database

    Mackuľak, T.; Vojs, M.; Grabic, R.; Golovko, O.; Staňová, A.; Birošová, L.; Medveďová, A.; Híveš, J.; Gál, M.; Kromka, Alexander; Hanusová, A.

    2016-01-01

    Roč. 147, č. 1 (2016), s. 93-103 ISSN 0026-9247. [35th International Conference on Modern Electrochemical Methods (MEM). Jetřichovice, 18.05.2015-22.05.2015] Institutional support: RVO:68378271 Keywords : hospital wastewater * antibiotics * ecology * boron-doped diamond electrode * mass spectroscopy * pharmaceuticals Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.282, year: 2016

  19. High-rate and ultralong cycle-life LiFePO4 nanocrystals coated by boron-doped carbon as positive electrode for lithium-ion batteries

    Science.gov (United States)

    Feng, Jinpeng; Wang, Youlan

    2016-12-01

    An evolutionary modification approach, boron-doped carbon coating, has been used to improve the electrochemical performances of positive electrodes for lithium-ion batteries, and demonstrates apparent and significant modification effects. In this study, the boron-doped carbon coating is firstly adopted and used to decorate the performance of LiFePO4. The obtained composite exhibits a unique core-shell structure with an average diameter of 140 nm and a 4 nm thick boron-doped carbon shell that uniformly encapsulates the core. Owing to the boron element which could induce high amount of defects in the carbon, the electronic conductivity of LiFePO4 is greatly ameliorated. Thus, the boron-doped composite shows superior rate capability and cycle stability than the undoped sample. For instance, the reversible specific capacity of LiFePO4@B0.4-C can reach 164.1 mAh g-1 at 0.1C, which is approximately 96.5% of the theoretical capacity (170 mAh g-1). Even at high rate of 10C, it still shows a high specific capacity of 126.8 mAh g-1 and can be maintained at 124.5 mAh g-1 after 100 cycles with capacity retention ratio of about 98.2%. This outstanding Li-storage property enable the present design strategy to open up the possibility of fabricating the LiFePO4@B-C composite for high-performance lithium-ion batteries.

  20. Roughness-based monitoring of transparency and conductivity in boron-doped ZnO thin films prepared by spray pyrolysis

    International Nuclear Information System (INIS)

    Gaikwad, Rajendra S.; Bhande, Sambhaji S.; Mane, Rajaram S.; Pawar, Bhagwat N.; Gaikwad, Sanjay L.; Han, Sung-Hwan; Joo, Oh-Shim

    2012-01-01

    Graphical abstract: Display Omitted Highlights: ► We report surface roughness dependent transparency and conductivity in ZnO films. ► The surface roughness with respected to boron doping concentrations is studied. ► Boron doped and pristine Zinc oxide thin films have showed ≥95% transmittance. ► Increased carrier concentration of 9.21 × 10 21 cm −3 revealed from Hall measurement. -- Abstract: Sprayed polycrystalline ZnO and boron-doped ZnO thin films composed of spherical grains of 25–32 nm in diameters are used in roughness measurement and further correlated with the transparency and the conductivity characteristics. The surface roughness is increased up to Zn 0.98 B 0.02 O and then declined at higher boron concentrations. The sprayed ZnO films revealed ≥95% transmittance in the visible wavelength range, 1.956 × 10 −4 Ω cm electrical resistivity, 46 cm 2 /V s Hall mobility and 9.21 × 10 21 cm −3 charge carrier concentration. The X-ray photoelectron spectroscopy study has confirmed 0.15 eV binding energy change for Zn 2p 3/2 when 2 at% boron content is mixed without altering electro-optical properties substantially. Finally, using soft modeling importance of these textured ZnO over non-textured films for enhancing the solar cells performance is explored.

  1. Fabrication and characterization of composite TiO{sub 2} nanotubes/boron-doped diamond electrodes towards enhanced supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Sobaszek, M. [Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications and Informatics, Gdańsk University of Technology, 11/12 G. Narutowicza St., 80-233 Gdańsk (Poland); Siuzdak, K.; Sawczak, M. [Centre for Plasma and Laser Engineering, The Szewalski Institute of Fluid-Flow Machinery, Polish Academy of Sciences, 14 Fiszera St., 80-231 Gdansk (Poland); Ryl, J. [Department of Electrochemistry, Corrosion and Material Engineering, Faculty of Chemistry, Gdańsk University of Technology, 11/12 G. Narutowicza St., 80-233 Gdańsk (Poland); Bogdanowicz, R., E-mail: rbogdan@eti.pg.gda.pl [Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications and Informatics, Gdańsk University of Technology, 11/12 G. Narutowicza St., 80-233 Gdańsk (Poland)

    2016-02-29

    The composite TiO{sub 2} nanotubes/boron-doped diamond electrodes were deposited using Microwave Plasma Enhanced Chemical Vapor Deposition resulting in the improved electrochemical performance. This composite electrode can deliver high specific capacitance of 7.46 mF cm{sup −2} comparing to boron-doped diamond (BDD) deposited onto flat Ti plate (0.11 mF cm{sup −2}).The morphology and composition of composite electrode were characterized by scanning electron microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) techniques. According to XPS and Raman analyses, the structure of TiO{sub 2} was greatly changed during Chemical Vapor Deposition process: formation of Ti{sup 3+} sites, partial anatase to rutile transformation and titanium carbide phase formation. This effect is attributed to the simultaneous presence of activated hydrogen and carbon in the plasma leading to enhanced dehydration of NTs (nanotubes) followed by carbon bonding. The enhanced capacitive effect of TiO{sub 2} NT/BDD could be recognized as: (1) the unique synergistic morphology of NTs and BDD providing more efficient conducting pathway for the diffusion of ions and (2) partial decomposition of NTs and transformation towards to TiC and Ti{sub 2}O{sub 3} fractions. Finally, highly ordered titania nanotubes produced via simply, quick and controllable method — anodization, could act as promising substrate for conductive BDD layer deposition and further application of such composites for supercapacitor construction. - Highlights: • The TiO{sub 2} nanotube (NT)/diamond electrode delivers capacitance of 7.46 mF cm{sup −2}. • The NTs are not affected by diamond growth process and keep their pristine shape. • The BDD overlayer fully encapsulates TiO{sub 2} NTs exhibiting typical columnar growth. • The activated hydrogen and carbon in the plasma lead to enhanced dehydration of NTs. • The presence of TiC and Ti{sub 2}O{sub 3} fractions introducing additional capacitance.

  2. Application of electrochemical technology for removing petroleum hydrocarbons from produced water using lead dioxide and boron-doped diamond electrodes.

    Science.gov (United States)

    Gargouri, Boutheina; Gargouri, Olfa Dridi; Gargouri, Bochra; Trabelsi, Souhel Kallel; Abdelhedi, Ridha; Bouaziz, Mohamed

    2014-12-01

    Although diverse methods exist for treating polluted water, the most promising and innovating technology is the electrochemical remediation process. This paper presents the anodic oxidation of real produced water (PW), generated by the petroleum exploration of the Petrobras plant-Tunisia. Experiments were conducted at different current densities (30, 50 and 100 mA cm(-2)) using the lead dioxide supported on tantalum (Ta/PbO2) and boron-doped diamond (BDD) anodes in an electrolytic batch cell. The electrolytic process was monitored by the chemical oxygen demand (COD) and the residual total petroleum hydrocarbon [TPH] in order to know the feasibility of electrochemical treatment. The characterization and quantification of petroleum wastewater components were performed by gas chromatography mass spectrometry. The COD removal was approximately 85% and 96% using PbO2 and BDD reached after 11 and 7h, respectively. Compared with PbO2, the BDD anode showed a better performance to remove petroleum hydrocarbons compounds from produced water. It provided a higher oxidation rate and it consumed lower energy. However, the energy consumption and process time make useless anodic oxidation for the complete elimination of pollutants from PW. Cytotoxicity has shown that electrochemical oxidation using BDD could be efficiently used to reduce more than 90% of hydrocarbons compounds. All results suggest that electrochemical oxidation could be an effective approach to treat highly concentrated organic pollutants present in the industrial petrochemical wastewater and significantly reduce the cost and time of treatment. Copyright © 2014 Elsevier Ltd. All rights reserved.

  3. Simultaneous determination of paracetamol and ibuprofen in pharmaceutical samples by differential pulse voltammetry using a boron-doped diamond electrode

    Energy Technology Data Exchange (ETDEWEB)

    Lima, Amanda B.; Guimaraes, Carlos F.R.C.; Verly, Rodrigo M.; Silva, Leonardo M. da [Universidade Federal dos Vales do Jequitinhonha e Mucuri (UFVJM), Diamantina, MG (Brazil). Departamento de Quimica; Torres, Livia M.F.C.; Carvalho, Junior, Alvaro D.; Santos, Wallans T. P. dos, E-mail: wallanst@ufvjm.edu.br [Universidade Federal dos Vales do Jequitinhonha e Mucuri (UFVJM), Diamantina, MG (Brazil). Departamento de Farmacia

    2014-03-15

    This work presents a simple, fast and low-cost methodology for the simultaneous determination of paracetamol (PC) and ibuprofen (IB) in pharmaceutical formulations by differential pulse voltammetry using a boron-doped diamond (BDD) electrode. A well-defined oxidation peak was observed using the BDD electrode for each analyte (0.85 V for PC and 1.72 V for IB (vs. Ag/AgCl)) in 0.1 mol L{sup -1} H{sub 2}SO{sub 4} solution containing 10% (v/v) of ethanol. Calibration curves for the simultaneous determination of PC and IB showed a linear response for both drugs in a concentration range of 20 to 400 μmol L{sup -1} (r{sup 2} = 0.999), with a detection limit of 7.1 μmol L{sup -1} for PC and 3.8 μmol L{sup -1} for IB. The addition-recovery studies in samples were about 100% and the results were validated by chromatographic methods. (author)

  4. Oxidation of carbon monoxide, hydrogen peroxide and water at a boron doped diamond electrode: the competition for hydroxyl radicals.

    Science.gov (United States)

    Kisacik, Izzet; Stefanova, Ana; Ernst, Siegfried; Baltruschat, Helmut

    2013-04-07

    Boron doped diamond (BDD) electrodes have an extremely high over-voltage for oxygen evolution from water, which favours its use in oxidation processes of other compounds at high potentials. We used a rotating ring disc (RRDE) assembly and differential electrochemical mass spectrometry (DEMS) in order to monitor the consumption or the production of species in the course of the electrode processes. By intercepting the intermediate of the electrochemical water oxidation with chemical reactions we demonstrate clearly, albeit indirectly, that in the water oxidation process at BDD above 2.5 V the first step is the formation of ˙OH radicals. The electro-oxidation of CO to CO2 at BDD electrodes proceeds only via a first attack by ˙OH radicals followed by a further electron transfer to the electrode. At potentials below the onset of oxygen evolution from water, H2O2 is oxidised by a direct electron transfer to the BDD electrode, while at higher potentials, two different reactions paths compete for the ˙OH radicals formed in the first electron transfer from water: one, where these ˙OH radicals react with each other followed by further electron transfers leading to O2 on the one hand and one, where ˙OH radicals react with other species like H2O2 or CO with subsequent electron transfers on the other hand.

  5. Voltammetric determination of mixtures of caffeine and chlorogenic acid in beverage samples using a boron-doped diamond electrode.

    Science.gov (United States)

    Yardım, Yavuz; Keskin, Ertugrul; Şentürk, Zühre

    2013-11-15

    Herein, a boron-doped diamond (BDD) electrode that is anodically pretreated was used for the simultaneous determination of caffeine (CAF) and chlorogenic acid (CGA) by cyclic and adsorptive stripping voltammetry. The dependence of peak current and potential on pH, scan rate, accumulation parameters and other experimental variables were studied. By using square-wave stripping mode after 60 s accumulation under open-circuit voltage, the BDD electrode was able to separate the oxidation peak potentials of CAF and CGA present in binary mixtures by about 0.4V in Britton-Robinson buffer at pH 1.0. The limits of detection were 0.107 µg mL(-1) (5.51×10(-7) M) for CAF, and 0.448 µg mL(-1) (1.26×10(-6) M) for CGA. The practical applicability of this methodology was tested in commercially available beverage samples. © 2013 Elsevier B.V. All rights reserved.

  6. Enhanced selectivity of boron doped diamond electrodes for the detection of dopamine and ascorbic acid by increasing the film thickness

    Energy Technology Data Exchange (ETDEWEB)

    Qi, Yao; Long, Hangyu [School of Material Science and Engineering, Central South University, Changsha 410083 (China); Ma, Li, E-mail: marycsupm@csu.edu.cn [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Wei, Quiping, E-mail: qiupwei@csu.edu.cn [School of Material Science and Engineering, Central South University, Changsha 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Li, Site [School of Material Science and Engineering, Central South University, Changsha 410083 (China); Yu, Zhiming [School of Material Science and Engineering, Central South University, Changsha 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Hu, Jingyuan [School of Material Science and Engineering, Central South University, Changsha 410083 (China); Liu, Peizhi [Key laboratory of interface science and engineering in advanced materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024,PR China (China); Wang, Yijia [School of Material Science and Engineering, Central South University, Changsha 410083 (China); Meng, Lingcong [Department of Chemistry, University of Warwick, Coventry, West Midlands CV4 7AL (United Kingdom)

    2016-12-30

    Highlights: • BDD electrodes with different thickness have been fabricated. • BDD electrodes are used for simultaneous detection of DA and AA. • Anodic pretreatment enhance the separation of DA and AA oxidation peak potential. • Thicker BDD electrode show better performance for DA detection coexisting with AA. - Abstract: In this paper, boron doped diamond (BDD) with different thickness were prepared by hot filament chemical vapor deposition. The performance of BDD electrodes for detecting dopamine (DA) and ascorbic acid (AA) were investigated. Scanning electron microscopy and Raman spectra reveal the grain size increases and the film quality improves with the increase of film thickness. Electrochemical test show that the transfer coefficient in [Fe{sub 3} (CN) {sub 6}]{sup 3−/4−} redox system increases with the increase of the film thickness. The results of selectivity and sensitivity for DA mixed with AA detection show that 8h-BDD and 12h-BDD electrodes possess well selective separated oxidation peaks of DA and AA, and the 12h-BDD electrode exhibits optimal sensitivity until the DA concentration drops to 1 μ M.

  7. Electrochemical oxidation of tramadol in low-salinity reverse osmosis concentrates using boron-doped diamond anodes.

    Science.gov (United States)

    Lütke Eversloh, Christian; Schulz, Manoj; Wagner, Manfred; Ternes, Thomas A

    2015-04-01

    The electrochemical treatment of low-salinity reverse osmosis (RO) concentrates was investigated using tramadol (100 μM) as a model substance for persistent organic contaminants. Galvanostatic degradation experiments using boron-doped diamond electrodes at different applied currents were conducted in RO concentrates as well as in ultra-pure water containing either sodium chloride or sodium sulfate. Kinetic investigations revealed a significant influence of in-situ generated active chlorine besides direct anodic oxidation. Therefore, tramadol concentrations decreased more rapidly at elevated chloride content. Nevertheless, reduction of total organic carbon (TOC) was found to be comparatively low, demonstrating that transformation rather than mineralization was taking place. Early stage product formation could be attributed to both direct and indirect processes, including demethylation, hydroxylation, dehydration, oxidative aromatic ring cleavage and halogenation reactions. The latter led to various halogenated derivatives and resulted in AOX (adsorbable organic halogens) formation in the lower mg/L-range depending on the treatment conditions. Characterisation of transformation products (TPs) was achieved via MS(n) experiments and additional NMR measurements. Based on identification and quantification of the main TPs in different matrices and on additional potentiostatic electrolysis, a transformation pathway was proposed. Copyright © 2014 Elsevier Ltd. All rights reserved.

  8. Electrochemical incineration of chloromethylphenoxy herbicides in acid medium by anodic oxidation with boron-doped diamond electrode

    International Nuclear Information System (INIS)

    Boye, Birame; Brillas, Enric; Marselli, Beatrice; Michaud, Pierre-Alain; Comninellis, Christos; Farnia, Giuseppe; Sandona, Giancarlo

    2006-01-01

    The electrochemical degradation of saturated solutions of herbicides 4-chloro-2-methylphenoxyacetic acid, 2-(4-chlorophenoxy)-2-methylpropionic acid and 2-(4-chloro-2-methylphenoxy)propionic acid in 1 M HClO 4 on a boron-doped diamond (BDD) thin film anode has been studied by chronoamperometry, cyclic voltammetry and bulk electrolysis. At low anodic potentials polymeric products are formed causing the fouling and deactivation of BDD. This is reactivated at high potentials when water decomposes producing hydroxyl radical as strong oxidant of organics. Electrolyses in a batch recirculation system at constant current density ≥8 mA cm -2 yielded overall decontamination of all saturated solution. The effect of current density and herbicide concentration on the degradation rate of each compound, the specific charge required for its total mineralization and instantaneous current efficiency have been investigated. Experimental results have been compared with those predicted by a theoretical model based on a fast anodic oxidation of initial herbicides, showing that at 30 mA cm -2 their degradation processes are completely controlled by mass transfer. Kinetic analysis of the change of herbicide concentration with time during electrolysis, determined by high-performance liquid chromatography, revealed that all compounds follow a pseudo first-order reaction. Aromatic intermediates and generated carboxylic acids have been identified using this technique and a general pathway for the electrochemical incineration of all herbicides on BDD is proposed

  9. Destination of organic pollutants during electrochemical oxidation of biologically-pretreated dye wastewater using boron-doped diamond anode

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Xiuping [Department of Environmental Engineering, Peking University, the Key Laboratory of Water and Sediment Sciences, Ministry of Education, Beijing100871 (China); Ni, Jinren, E-mail: nijinren@iee.pku.edu.cn [Department of Environmental Engineering, Peking University, the Key Laboratory of Water and Sediment Sciences, Ministry of Education, Beijing100871 (China); Wei, Junjun; Xing, Xuan; Li, Hongna [Department of Environmental Engineering, Peking University, the Key Laboratory of Water and Sediment Sciences, Ministry of Education, Beijing100871 (China)

    2011-05-15

    Electrochemical oxidation of biologically-pretreated dye wastewater was performed in a boron-doped diamond (BDD) anode system. After electrolysis of 12 h, the COD was decreased from 532 to 99 mg L{sup -1} (<100 mg L{sup -1}, the National Discharge Standard of China). More importantly, the destination of organic pollutants during electrochemical oxidation process was carefully investigated by molecular weight distribution measurement, resin fractionation, ultraviolet-visible spectroscopy, HPLC and GC-MS analysis, and toxicity test. As results, most organic pollutants were completely removed by electrochemical oxidation and the rest was primarily degraded to simpler compounds (e.g., carboxylic acids and short-chain alkanes) with less toxicity, which demonstrated that electrochemical oxidation of biologically-pretreated dye wastewater with BDD anode was very effective and safe. Especially, the performance of BDD anode system in degradation of large molecular organics such as humic substances makes it very promising in practical applications as an advanced treatment of biologically-pretreated wastewaters.

  10. Use of a Boron Doped Spherical Phantom for the Investigation of Neutron Directional Properties: Comparison Between Experiment and MCNP Simulation

    Energy Technology Data Exchange (ETDEWEB)

    Drake, P.; Kierkegaard, J

    1999-07-01

    A boron doped 19 cm diameter spherical phantom was constructed to give information on the direction of neutrons inside the Ringhals 4 containment. The phantom was made of 40% paraffin and 60% boric acid. 10B contributes 2% of the total phantom weight. The phantom was tested for its angular sensitivity to neutrons. The response was tested with a {sup 252}Cf source and with a Monte Carlo calculation (MCNP) simulating a {sup 252}Cf source. In these investigations the phantom showed a strong directional response. However, there was only a fair correspondence between the experiment and the simulation. The discrepancies are, at least in part, due to the difference in energy and angular response of the dosemeters as compared with the idealised response characteristics in the MCNP calculation. In the MCNP calculation the experimental conditions were not fully simulated. The investigations also showed that the addition of boron to the phantom reduces the leakage of thermalised neutrons from the phantom, and the production of neutron induced photons in the phantom to insignificant levels. (author)

  11. Electrochemical treatment of reverse osmosis concentrate on boron-doped electrodes in undivided and divided cell configurations.

    Science.gov (United States)

    Bagastyo, Arseto Y; Batstone, Damien J; Kristiana, Ina; Escher, Beate I; Joll, Cynthia; Radjenovic, Jelena

    2014-08-30

    An undivided electrolytic cell may offer lower electrochlorination through reduction of chlorine/hypochlorite at the cathode. This study investigated the performance of electrooxidation of reverse osmosis concentrate using boron-doped diamond electrodes in membrane-divided and undivided cells. In both cell configurations, similar extents of chemical oxygen demand and dissolved organic carbon removal were obtained. Continuous formation of chlorinated organic compounds was observed regardless of the membrane presence. However, halogenation of the organic matter did not result in a corresponding increase in toxicity (Vibrio fischeri bioassay performed on extracted samples), with toxicity decreasing slightly until 10AhL(-1), and generally remaining near the initial baseline-toxicity equivalent concentration (TEQ) of the raw concentrate (i.e., ∼2mgL(-1)). The exception was a high range toxicity measure in the undivided cell (i.e., TEQ=11mgL(-1) at 2.4AhL(-1)), which rapidly decreased to 4mgL(-1). The discrepancy between the halogenated organic matter and toxicity patterns may be a consequence of volatile and/or polar halogenated by-products formed in oxidation by OH electrogenerated at the anode. The undivided cell exhibited lower energy compared to the divided cell, 0.25kWhgCOD(-1) and 0.34kWhgCOD(-1), respectively, yet it did not demonstrate any improvement regarding by-products formation. Copyright © 2014 Elsevier B.V. All rights reserved.

  12. Monitoring the evolution of boron doped porous diamond electrode on flexible retinal implant by OCT and in vivo impedance spectroscopy

    International Nuclear Information System (INIS)

    Hébert, Clément; Cottance, Myline; Degardin, Julie; Scorsone, Emmanuel; Rousseau, Lionel; Lissorgues, Gaelle; Bergonzo, Philippe; Picaud, Serge

    2016-01-01

    Nanocrystalline Boron doped Diamond proved to be a very attractive material for neural interfacing, especially with the retina, where reduce glia growth is observed with respect to other materials, thus facilitating neuro-stimulation over long terms. In the present study, we integrated diamond microelectrodes on a polyimide substrate and investigated their performances for the development of neural prosthesis. A full description of the microfabrication of the implants is provided and their functionalities are assessed using cyclic voltammetry and electrochemical impedance spectroscopy. A porous structure of the electrode surface was thus revealed and showed promising properties for neural recording or stimulation. Using the flexible implant, we showed that is possible to follow in vivo the evolution of the electric contact between the diamond electrodes and the retina over 4 months by using electrochemical impedance spectroscopy. The position of the implant was also monitored by optical coherence tomography to corroborate the information given by the impedance measurements. The results suggest that diamond microelectrodes are very good candidates for retinal prosthesis. - Highlights: • Microfabrication of porous diamond electrode on flexible retinal implant • Electrochemical characterization of microelectrode for neural interfacing • In vivo impedance spectroscopy of retinal tissue

  13. Electrochemical Sensing and Assessment of Parabens in Hydro- Alcoholic Solutions and Water Using a Boron-Doped Diamond Electrode

    Directory of Open Access Journals (Sweden)

    Vasile Ostafe

    2008-07-01

    Full Text Available In this paper, the electrochemical behaviour of several parabens preservatives, i.e. esters of p-hydroxybenzoic acid, methyl-, ethyl- and propyl-4-hydroxybenzoates as methyl-, ethyl- and propyl-parabens (MB, EB, and PB, has been investigated at a commercial boron-doped diamond electrode (BDDE, especially in the anodic potential range, in both hydro-alcoholic and aqueous media. The cyclic voltammetric and chronoamperometric measurements yielded calibration plots with very good linearity (R2 between 0.990 and 0.998 and high sensitivity, useful for detection and analytical applications. The determination of the characteristics of individual compounds, of an “overall paraben index”, the assessment of the stability and the saturation solubility in water, and the amperometric sensing and determination in double distilled, tap and river water matrix of the relatively slightly soluble investigated parabens have been carried out using electrochemical alternative. Estimated water solubility was correlated with the octanol-water partition coefficient. Several ideas regarding stability and persistence of the presumptive eco-toxic investigated preservatives in the environment or water systems have been adjacently discussed.

  14. Use of a Boron Doped Spherical Phantom for the Investigation of Neutron Directional Properties: Comparison Between Experiment and MCNP Simulation

    International Nuclear Information System (INIS)

    Drake, P.; Kierkegaard, J.

    1999-01-01

    A boron doped 19 cm diameter spherical phantom was constructed to give information on the direction of neutrons inside the Ringhals 4 containment. The phantom was made of 40% paraffin and 60% boric acid. 10B contributes 2% of the total phantom weight. The phantom was tested for its angular sensitivity to neutrons. The response was tested with a 252 Cf source and with a Monte Carlo calculation (MCNP) simulating a 252 Cf source. In these investigations the phantom showed a strong directional response. However, there was only a fair correspondence between the experiment and the simulation. The discrepancies are, at least in part, due to the difference in energy and angular response of the dosemeters as compared with the idealised response characteristics in the MCNP calculation. In the MCNP calculation the experimental conditions were not fully simulated. The investigations also showed that the addition of boron to the phantom reduces the leakage of thermalised neutrons from the phantom, and the production of neutron induced photons in the phantom to insignificant levels. (author)

  15. The Use of Boron-doped Diamond Electrode on Yeast-based Microbial Fuel Cell for Electricity Production

    Science.gov (United States)

    Hanzhola, G.; Tribidasari, A. I.; Endang, S.

    2018-01-01

    The dependency of fossil energy in Indonesia caused the crude oil production to be drastically decreased since 2001, while energy consumption increased. In addition, The use of fossil energy can cause several environmental problems. Therefore, we need an alternative environment-friendly energy as solution for these problems. A microbial fuel cell is one of the prospective alternative source of an environment-friendly energy source to be developed. In this study, Boron-doped diamond electrode was used as working electrode and Candida fukuyamaensis as biocatalyst in microbial fuel cell. Different pH of anode compartment (pH 6.5-7.5) and mediator concentration (10-100 μM) was used to produce an optimal electricity. MFC was operated for 3 hours. During operation, the current and voltage density was measured with potensiostat. The maximum power and current density are 425,82 mW/m2 and 440 mA/m2, respectively, for MFC using pH 7.5 at anode compartment without addition of methylene blue. The addition of redox mediator is lowering the produced electricity because of its anti microbial properties that can kill the microbe.

  16. Simultaneous determination of paracetamol and ibuprofen in pharmaceutical samples by differential pulse voltammetry using a boron-doped diamond electrode

    International Nuclear Information System (INIS)

    Lima, Amanda B.; Guimaraes, Carlos F.R.C.; Verly, Rodrigo M.; Silva, Leonardo M. da; Torres, Livia M.F.C.; Carvalho Junior, Alvaro D.; Santos, Wallans T. P. dos

    2014-01-01

    This work presents a simple, fast and low-cost methodology for the simultaneous determination of paracetamol (PC) and ibuprofen (IB) in pharmaceutical formulations by differential pulse voltammetry using a boron-doped diamond (BDD) electrode. A well-defined oxidation peak was observed using the BDD electrode for each analyte (0.85 V for PC and 1.72 V for IB (vs. Ag/AgCl)) in 0.1 mol L -1 H 2 SO 4 solution containing 10% (v/v) of ethanol. Calibration curves for the simultaneous determination of PC and IB showed a linear response for both drugs in a concentration range of 20 to 400 μmol L -1 (r 2 = 0.999), with a detection limit of 7.1 μmol L -1 for PC and 3.8 μmol L -1 for IB. The addition-recovery studies in samples were about 100% and the results were validated by chromatographic methods. (author)

  17. Effects of Calcination Temperature on Preparation of Boron-Doped TiO2 by Sol-Gel Method

    Directory of Open Access Journals (Sweden)

    Wenjie Zhang

    2012-01-01

    Full Text Available Boron-doped TiO2 photocatalyst was prepared by a modified sol-gel method. Being calcinated at temperatures from 300°C to 600°C, all the 3% B-TiO2 samples presented anatase TiO2 phase, and TiO2 crystallite sizes were calculated to be 7.6, 10.3, 13.6, and 27.3 nm, respectively. The samples were composed of irregular particles with rough surfaces in the size range within 3 μm. Ti atoms were in an octahedron skeleton and existed mainly in the form of Ti4+, while the Ti-O-B structure was the main boron existing form in the 3% B-TiO2 sample. When calcination temperature increased from 300°C to 600°C, specific surface area decreased sharply from 205.6 m2/g to 31.8 m2/g. The average pore diameter was 10.53 nm with accumulative pore volume of 0.244 mL/g for the 3% B-TiO2 sample calcinated at 400°C, which performed optimal photocatalytic degradation activity. After 90 min of UV-light irradiation, degradation rate of methyl orange was 96.7% on the optimized photocatalyst.

  18. Anodic stripping voltammetry of gold nanoparticles at boron-doped diamond electrodes and its application in immunochromatographic strip tests.

    Science.gov (United States)

    Ivandini, Tribidasari A; Wicaksono, Wiyogo P; Saepudin, Endang; Rismetov, Bakhadir; Einaga, Yasuaki

    2015-03-01

    Anodic stripping voltammetry (ASV) of colloidal gold-nanoparticles (AuNPs) was investigated at boron-doped diamond (BDD) electrodes in 50 mM HClO4. A deposition time of 300 s at-0.2 V (vs. Ag/AgCl) was fixed as the condition for the ASV. The voltammograms showed oxidation peaks that could be attributed to the oxidation of gold. These oxidation peaks were then investigated for potential application in immunochromatographic strip tests for the selective and quantitative detection of melamine, in which AuNPs were used as the label for the antibody of melamine. Linear regression of the oxidation peak currents appeared in the concentration range from 0.05-0.6 μg/mL melamine standard, with an estimated LOD of 0.069 μg/mL and an average relative standard deviation of 8.0%. This indicated that the method could be considered as an alternative method for selective and quantitative immunochromatographic applications. The validity was examined by the measurements of melamine injected into milk samples, which showed good recovery percentages during the measurements. Copyright © 2014 Elsevier B.V. All rights reserved.

  19. Experimental approach to controllably vary protein oxidation while minimizing electrode adsorption for boron-doped diamond electrochemical surface mapping applications.

    Science.gov (United States)

    McClintock, Carlee S; Hettich, Robert L

    2013-01-02

    Oxidative protein surface mapping has become a powerful approach for measuring the solvent accessibility of folded protein structures. A variety of techniques exist for generating the key reagent (i.e., hydroxyl radicals) for these measurements; however, these approaches range significantly in their complexity and expense of operation. This research expands upon earlier work to enhance the controllability of boron-doped diamond (BDD) electrochemistry as an easily accessible tool for producing hydroxyl radicals in order to oxidize a range of intact proteins. Efforts to modulate the oxidation level while minimizing the adsorption of protein to the electrode involved the use of relatively high flow rates to reduce protein residence time inside the electrochemical flow chamber. Additionally, a different cell activation approach using variable voltage to supply a controlled current allowed us to precisely tune the extent of oxidation in a protein-dependent manner. In order to gain perspective on the level of protein adsorption onto the electrode surface, studies were conducted to monitor protein concentration during electrolysis and gauge changes in the electrode surface between cell activation events. This report demonstrates the successful use of BDD electrochemistry for greater precision in generating a target number of oxidation events upon intact proteins.

  20. On the changing electrochemical behaviour of boron-doped diamond surfaces with time after cathodic pre-treatments

    International Nuclear Information System (INIS)

    Salazar-Banda, Giancarlo R.; Andrade, Leonardo S.; Nascente, Pedro A.P.; Pizani, Paulo S.; Rocha-Filho, Romeu C.; Avaca, Luis A.

    2006-01-01

    The electrochemical response of the Fe(CN) 6 4-/3- redox couple on boron-doped diamond (BDD) electrodes immediately after a cathodic pre-treatment and as a function of time exposed to atmospheric conditions is reported here. After this pre-treatment the electrode exhibits a changing electrochemical behaviour, i.e., a loss of the reversibility for the Fe(CN) 6 4-/3- redox couple as a function of time. Raman spectra showed that neither important bulk structural differences nor significant changes in the sp 2 /sp 3 content are introduced into the BDD film by the cathodic pre-treatment indicating that H-terminated sites play an important role in the electrochemical response of the electrodes. Thus, the changing behaviour reflected by a progressive decrease of the electron transfer rate with time must be associated to a loss of superficial hydrogen due to oxidation by oxygen from the air, as confirmed by X-ray photoelectron spectroscopy (XPS) analysis. Moreover, it was also found that this changing electrochemical behaviour is inversely proportional to the doping level, suggesting that the boron content has a stabilizing effect on the H-terminated surface. These results point out the necessity of doing the cathodic pre-treatment just before the electrochemical experiments are carried out in order to ensure reliable and reproducible results

  1. Determination of propylthiouracil in pharmaceuticals by differential pulse voltammetry using a cathodically pretreated boron-doped diamond electrode

    Energy Technology Data Exchange (ETDEWEB)

    Sartori, Elen Romao [Universidade Estadual de Londrina, PR (Brazil). Dept. de Quimica; Trench, Aline Barrios; Rocha-Filho, Romeu C.; Fatibello-Filho, Orlando, E-mail: bello@ufscar.br [Universidade Federal de Sao Carlos (UFSCAR), SP (Brazil). Dept. de Quimica

    2013-09-15

    A simple procedure is described for the determination of propylthiouracil (PTU) by differential pulse voltammetry (DPV) using a cathodically pretreated boron-doped diamond (BDD) electrode. Cyclic voltammetry studies indicate that the oxidation of PTU is irreversible at a peak potential of 1.42 V (vs. Ag/AgCl (3.0 mol L{sup -1} KCl)) in a Britton-Robinson (BR) buffer solution (pH 2.0). Under optimized conditions, the obtained analytical curve was linear (r = 0.9985) for the PTU concentration range of 1.0 to 29.1 {mu}mol L{sup -1} in a BR buffer solution (pH 2.0), with a detection limit of 0.90 {mu}mol L{sup -1}. The proposed method was successfully applied in the determination of PTU in pharmaceutical samples, with results in agreement at a 95% confidence level with those obtained using an official titration method. (author)

  2. Simultaneous square-wave voltammetric determination of aspartame and cyclamate using a boron-doped diamond electrode.

    Science.gov (United States)

    Medeiros, Roberta Antigo; de Carvalho, Adriana Evaristo; Rocha-Filho, Romeu C; Fatibello-Filho, Orlando

    2008-07-30

    A simple and highly selective electrochemical method was developed for the simultaneous determination of aspartame and cyclamate in dietary products at a boron-doped diamond (BDD) electrode. In square-wave voltammetric (SWV) measurements, the BDD electrode was able to separate the oxidation peak potentials of aspartame and cyclamate present in binary mixtures by about 400 mV. The detection limit for aspartame in the presence of 3.0x10(-4) mol L(-1) cyclamate was 4.7x10(-7) mol L(-1), and the detection limit for cyclamate in the presence of 1.0x10(-4) mol L(-1) aspartame was 4.2x10(-6) mol L(-1). When simultaneously changing the concentration of both aspartame and cyclamate in a 0.5 mol L(-1) sulfuric acid solution, the corresponding detection limits were 3.5x10(-7) and 4.5x10(-6) mol L(-1), respectively. The relative standard deviation (R.S.D.) obtained was 1.3% for the 1.0x10(-4) mol L(-1) aspartame solution (n=5) and 1.1% for the 3.0x10(-3) mol L(-1) cyclamate solution. The proposed method was successfully applied in the determination of aspartame in several dietary products with results similar to those obtained using an HPLC method at 95% confidence level.

  3. Highly sensitive detection of influenza virus by boron-doped diamond electrode terminated with sialic acid-mimic peptide.

    Science.gov (United States)

    Matsubara, Teruhiko; Ujie, Michiko; Yamamoto, Takashi; Akahori, Miku; Einaga, Yasuaki; Sato, Toshinori

    2016-08-09

    The progression of influenza varies according to age and the presence of an underlying disease; appropriate treatment is therefore required to prevent severe disease. Anti-influenza therapy, such as with neuraminidase inhibitors, is effective, but diagnosis at an early phase of infection before viral propagation is critical. Here, we show that several dozen plaque-forming units (pfu) of influenza virus (IFV) can be detected using a boron-doped diamond (BDD) electrode terminated with a sialic acid-mimic peptide. The peptide was used instead of the sialyloligosaccharide receptor, which is the common receptor of influenza A and B viruses required during the early phase of infection, to capture IFV particles. The peptide, which was previously identified by phage-display technology, was immobilized by click chemistry on the BDD electrode, which has excellent electrochemical characteristics such as low background current and weak adsorption of biomolecules. Electrochemical impedance spectroscopy revealed that H1N1 and H3N2 IFVs were detectable in the range of 20-500 pfu by using the peptide-terminated BDD electrode. Our results demonstrate that the BDD device integrated with the receptor-mimic peptide has high sensitivity for detection of a low number of virus particles in the early phase of infection.

  4. Monitoring the evolution of boron doped porous diamond electrode on flexible retinal implant by OCT and in vivo impedance spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Hébert, Clément, E-mail: clement.hebert@icn2.cat [CEA-LIST, Diamond Sensors Laboratory, Gif-sur-Yvette 91191 (France); Cottance, Myline [Université Paris-Est, ESYCOM-ESIEE Paris, Noisy le Grand (France); Degardin, Julie [INSERM, U968, Institut de la Vision, Paris (France); Scorsone, Emmanuel [CEA-LIST, Diamond Sensors Laboratory, Gif-sur-Yvette 91191 (France); Rousseau, Lionel; Lissorgues, Gaelle [Université Paris-Est, ESYCOM-ESIEE Paris, Noisy le Grand (France); Bergonzo, Philippe [CEA-LIST, Diamond Sensors Laboratory, Gif-sur-Yvette 91191 (France); Picaud, Serge [INSERM, U968, Institut de la Vision, Paris (France)

    2016-12-01

    Nanocrystalline Boron doped Diamond proved to be a very attractive material for neural interfacing, especially with the retina, where reduce glia growth is observed with respect to other materials, thus facilitating neuro-stimulation over long terms. In the present study, we integrated diamond microelectrodes on a polyimide substrate and investigated their performances for the development of neural prosthesis. A full description of the microfabrication of the implants is provided and their functionalities are assessed using cyclic voltammetry and electrochemical impedance spectroscopy. A porous structure of the electrode surface was thus revealed and showed promising properties for neural recording or stimulation. Using the flexible implant, we showed that is possible to follow in vivo the evolution of the electric contact between the diamond electrodes and the retina over 4 months by using electrochemical impedance spectroscopy. The position of the implant was also monitored by optical coherence tomography to corroborate the information given by the impedance measurements. The results suggest that diamond microelectrodes are very good candidates for retinal prosthesis. - Highlights: • Microfabrication of porous diamond electrode on flexible retinal implant • Electrochemical characterization of microelectrode for neural interfacing • In vivo impedance spectroscopy of retinal tissue.

  5. Optically transparent boron-doped nanocrystalline diamond films for spectroelectrochemical measurements on different substrates

    International Nuclear Information System (INIS)

    Sobaszek, M.; Bogdanowicz, R.; Pluciński, J.; Siuzdak, K.; Skowroński, Ł.

    2016-01-01

    Fabrication process of optically transparent boron nanocrystalline diamond (B- NCD) electrode on silicon and quartz substrate was shown. The B-NCD films were deposited on the substrates using Microwave Plasma Assisted Chemical Vapor Deposition (MWPACVD) at glass substrate temperature of 475 °C. A homogenous, continuous and polycrystalline surface morphology with high sp 3 content in B-NCD films and film thickness depending from substrate in the range of 60-300 nm was obtained. The high refraction index and transparency in visible (VIS) wavelength range was achieved. Moreover, cyclic voltammograms (CV) were recorded to determine reaction reversibility at the B-NCD electrode. CV measurements in aqueous media consisting of 1 mM K 3 [Fe(CN) 6 ] in 0.5 M Na 2 SO 4 demonstrated relatively fast kinetics expressed by a redox peak splitting below 503 mV for B-NCD/silicon and 110 mv for B-NCD/quartz

  6. Thermal equilibrium concentration of intrinsic point defects in heavily doped silicon crystals - Theoretical study of formation energy and formation entropy in area of influence of dopant atoms-

    Science.gov (United States)

    Kobayashi, K.; Yamaoka, S.; Sueoka, K.; Vanhellemont, J.

    2017-09-01

    It is well known that p-type, neutral and n-type dopants affect the intrinsic point defect (vacancy V and self-interstitial I) behavior in single crystal Si. By the interaction with V and/or I, (1) growing Si crystals become more V- or I-rich, (2) oxygen precipitation is enhanced or retarded, and (3) dopant diffusion is enhanced or retarded, depending on the type and concentration of dopant atoms. Since these interactions affect a wide range of Si properties ranging from as-grown crystal quality to LSI performance, numerical simulations are used to predict and to control the behavior of both dopant atoms and intrinsic point defects. In most cases, the thermal equilibrium concentrations of dopant-point defect pairs are evaluated using the mass action law by taking only the binding energy of closest pair to each other into account. The impacts of dopant atoms on the formation of V and I more distant than 1st neighbor and on the change of formation entropy are usually neglected. In this study, we have evaluated the thermal equilibrium concentrations of intrinsic point defects in heavily doped Si crystals. Density functional theory (DFT) calculations were performed to obtain the formation energy (Ef) of the uncharged V and I at all sites in a 64-atom supercell around a substitutional p-type (B, Ga, In, and Tl), neutral (C, Ge, and Sn) and n-type (P, As, and Sb) dopant atom. The formation (vibration) entropies (Sf) of free I, V and I, V at 1st neighboring site from B, C, Sn, P and As atoms were also calculated with the linear response method. The dependences of the thermal equilibrium concentrations of trapped and total intrinsic point defects (sum of free I or V and I or V trapped with dopant atoms) on the concentrations of B, C, Sn, P and As in Si were obtained. Furthermore, the present evaluations well explain the experimental results of the so-called ;Voronkov criterion; in B and C doped Si, and also the observed dopant dependent void sizes in P and As doped Si

  7. Boron-proton nuclear-fusion enhancement induced in boron-doped silicon targets by low-contrast pulsed laser

    Czech Academy of Sciences Publication Activity Database

    Picciotto, A.; Margarone, Daniele; Velyhan, Andriy; Bellutti, P.; Krása, Josef; Szydlowsky, A.; Bertuccio, G.; Shi, Y.; Mangione, A.; Prokůpek, Jan; Malinowska, A.; Krouský, Eduard; Ullschmied, Jiří; Láska, Leoš; Kucharik, M.; Korn, Georg

    2014-01-01

    Roč. 4, č. 3 (2014), , "031030-1"-"031030-8" ISSN 2160-3308 R&D Projects: GA MŠk ED1.1.00/02.0061; GA MŠk(CZ) LD14089; GA MŠk LM2010014 EU Projects: European Commission(XE) 284464 - LASERLAB-EUROPE Grant - others:ELI Beamlines(XE) CZ.1.05/1.1.00/02.0061; AVČR(CZ) M100101210 Institutional support: RVO:68378271 ; RVO:61389021 Keywords : thermonuclear fusion * fast ions * plasmas * energy * acceleration * hydrogen * detector Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders; BL - Plasma and Gas Discharge Physics (UFP-V) Impact factor: 9.043, year: 2014

  8. Influence of boron concentration on growth characteristic and electro-catalytic performance of boron-doped diamond electrodes prepared by direct current plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Feng Yujie; Lv Jiangwei; Liu Junfeng; Gao Na; Peng Hongyan; Chen Yuqiang

    2011-01-01

    A series of boron-doped diamond (BDD) electrodes were prepared by direct current plasma chemical vapor deposition (DC-PCVD) with different compositions of CH 4 /H 2 /B(OCH 3 ) 3 gas mixture. A maximum growth rate of 0.65 mg cm -2 h -1 was obtained with CH 4 /H 2 /B(OCH 3 ) 3 radio of 4/190/10 and this growth condition was also a turning point for discharge plasma stability which arose from the addition of B(OCH 3 ) 3 that changed electron energy distribution and influenced the plasma reaction. The surface coating structure and electro-catalytic performance of the BDD electrodes were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, Hall test, and electrochemical measurement and electro-catalytic oxidation in phenol solution. It is suggested that the boron doping level and the thermal stress in the films are the main factors affecting the electro-catalytic characteristics of the electrodes. Low boron doping level with CH 4 /H 2 /B(OCH 3 ) 3 ratio of 4/199/1 decreased the films electrical conductivity and its electro-catalytic activity. When the carrier concentration in the films reached around 10 20 cm -3 with CH 4 /H 2 /B(OCH 3 ) 3 ratio over a range of 4/195/5-4/185/15, the thermal stress in the films was the key reason that influenced the electro-catalytic activity of the electrodes for its effect on diamond lattice expansion. Therefore, the BDD electrode with modest CH 4 /H 2 /B(OCH 3 ) 3 ratio of 4/190/10 possessed the best phenol removal efficiency.

  9. Boron doped bcc-W films: Achieving excellent mechanical properties and tribological performance by regulating substrate bias voltage

    Science.gov (United States)

    Yang, Lina; Zhang, Kan; Zeng, Yi; Wang, Xin; Du, Suxuan; Tao, Chuanying; Ren, Ping; Cui, Xiaoqiang; Wen, Mao

    2017-11-01

    Boron doped bcc-W (WBx, x = B/W) films were deposited on Si(100) substrates by magnetron co-sputtering pure W and B targets. Our results reveal that when the absolute value of substrate bias voltage (Vb) increases from floating to 240 V, the value of x monotonously decreases from 0.18 to 0.04, accompanied by a phase transition from a mixture of tetragonal γ-W2B and body-centered cubic α-W(B) phase (-Vb ≤ 60 V) to α-W(B) single phase (-Vb > 60 V). Hardness, depending on Vb, increases first and then drops, where the maximum hardness of 30.8 GPa was obtained at -Vb = 60 V and far higher than pure W and W2B theoretical value. In the mixed phase structure, the grain boundaries strengthening, Hall-Petch effect and solid-solution strengthening induced by B dominate the strengthening mechanism. Astonishingly, the film grown at -Vb = 120 V still possesses twice higher hardness than pure W, wherein unexpectedly low (6.7 at.%) B concentration and only the single α-W(B) phase can be identified. In this case, both Hall-Petch effect and solid-solution strengthening work. Besides, low friction coefficient of ∼0.18 can be obtained for the films with α-W(B) phase, which is competitive to that of reported B-rich transition-metal borides, such as TiB2, CrB and CrB2.

  10. Removal of organic contaminants from secondary effluent by anodic oxidation with a boron-doped diamond anode as tertiary treatment

    Energy Technology Data Exchange (ETDEWEB)

    Garcia-Segura, Sergi, E-mail: sergigarcia@ub.edu [Advanced Water Management Centre, The University of Queensland, Level 4, Gehrmann Bld. (60), St Lucia, QLD 072 (Australia); Laboratori d’Electroquímica dels Materials i del Medi Ambient, Departament de Química Física, Facultat de Química, Universitat de Barcelona, Martí i Franquès 1-11, 08028 Barcelona (Spain); Keller, Jürg [Advanced Water Management Centre, The University of Queensland, Level 4, Gehrmann Bld. (60), St Lucia, QLD 072 (Australia); Brillas, Enric [Laboratori d’Electroquímica dels Materials i del Medi Ambient, Departament de Química Física, Facultat de Química, Universitat de Barcelona, Martí i Franquès 1-11, 08028 Barcelona (Spain); Radjenovic, Jelena, E-mail: j.radjenovic@awmc.uq.edu.au [Advanced Water Management Centre, The University of Queensland, Level 4, Gehrmann Bld. (60), St Lucia, QLD 072 (Australia)

    2015-02-11

    Graphical abstract: - Highlights: • Mineralization of secondary effluent by anodic oxidation with BDD anode. • Complete removal of 29 pharmaceuticals and pesticides at trace level concentrations. • Organochlorine and organobromine byproducts were formed at low μM concentrations. • Chlorine species evolution assessed to evaluate the anodic oxidation applicability. - Abstract: Electrochemical advanced oxidation processes (EAOPs) have been widely investigated as promising technologies to remove trace organic contaminants from water, but have rarely been used for the treatment of real waste streams. Anodic oxidation with a boron-doped diamond (BDD) anode was applied for the treatment of secondary effluent from a municipal sewage treatment plant containing 29 target pharmaceuticals and pesticides. The effectiveness of the treatment was assessed from the contaminants decay, dissolved organic carbon and chemical oxygen demand removal. The effect of applied current and pH was evaluated. Almost complete mineralization of effluent organic matter and trace contaminants can be obtained by this EAOP primarily due to the action of hydroxyl radicals formed at the BDD surface. The oxidation of Cl{sup −} ions present in the wastewater at the BDD anode gave rise to active chlorine species (Cl{sub 2}/HClO/ClO{sup −}), which are competitive oxidizing agents yielding chloramines and organohalogen byproducts, quantified as adsorbable organic halogen. However, further anodic oxidation of HClO/ClO{sup −} species led to the production of ClO{sub 3}{sup −} and ClO{sub 4}{sup −} ions. The formation of these species hampers the application as a single-stage tertiary treatment, but posterior cathodic reduction of chlorate and perchlorate species may reduce the risks associated to their presence in the environment.

  11. Electrochemical degradation of a real textile effluent using boron-doped diamond or β-PbO2 as anode

    International Nuclear Information System (INIS)

    Aquino, Jose M.; Pereira, Gabriel F.; Rocha-Filho, Romeu C.; Bocchi, Nerilso; Biaggio, Sonia R.

    2011-01-01

    Highlights: · Diamond anode enables total abatement of a real textile effluent COD with low energy consumption. · Use of diamond anode enables excellent decolorization rate of effluent in the presence of Cl - ions. · Diamond anode might be an excellent option for electrochemical treatment of real textile effluents. · PbO 2 anode, due to low cost and easiness of preparation, may be an option to decolorize the effluents. - Abstract: Constant current electrolyses are carried out in a filter-press reactor using a boron-doped diamond (Nb/BDD) or a Ti-Pt/β-PbO 2 anode, varying current density (j) and temperature. The degradation of the real textile effluent is followed by its decolorization and chemical oxygen demand (COD) abatement. The effect of adding NaCl (1.5 g L -1 ) on the degradation of the effluent is also investigated. The Nb/BDD anode yields much higher decolorization (attaining the DFZ limit) and COD-abatement rates than the Ti-Pt/β-PbO 2 anode, at any experimental condition. The best conditions are j = 5 mA cm -2 and 55 o C, for the system's optimized hydrodynamic conditions. The addition of chloride ions significantly increases the decolorization rate; thus a decrease of more than 90% of the effluent relative absorbance is attained using an applied electric charge per unit volume of the electrolyzed effluent (Q ap ) of only about 2 kA h m -3 . Practically total abatement of the effluent COD is attained with the Nb/BDD anode using a Q ap value of only 7 kA h m -3 , with an energy consumption of about 30 kW h m -3 . This result allows to conclude that the Nb/BDD electrode might be an excellent option for the remediation of textile effluents.

  12. Boron-doped diamond electrooxidation of ethyl paraben: The effect of electrolyte on by-products distribution and mechanisms.

    Science.gov (United States)

    Frontistis, Zacharias; Antonopoulou, Maria; Yazirdagi, Melis; Kilinc, Zeynep; Konstantinou, Ioannis; Katsaounis, Alexandros; Mantzavinos, Dionissios

    2017-06-15

    Ethyl paraben (EP), a representative emerging pollutant of the parabens family, was subject to electrochemical oxidation over a boron-doped diamond (BDD) anode. Experiments were carried out in a single-compartment cell at 10-70 mA cm -2 current density, 200-600 μg L -1 EP concentration, initial solution pH 3-9 and 0.1 M electrolyte concentration. The degradation rate is favored at increased current densities and in the presence of NaCl as the supporting electrolyte, while the pH effect is inconsiderable. For instance, the first order rate constant for the degradation of 200 μg L -1 EP at 30 mA cm -2 was 0.25, 0.1 and 0.07 min -1 with NaCl, Na 2 SO 4 and HClO 4 , respectively. Degradation in secondary treated wastewater was faster than in pure water presumably due to the action of chloride ions present in the effluent. Liquid chromatography time-of-flight mass spectrometry (LC-TOF-MS) was employed to determine major transformation by-products (TBPs). The route of EP degradation with Na 2 SO 4 involves hydroxylation and demethylation reactions, signifying the role of electrogenerated hydroxyl radicals in the process. Twenty one TBPs were identified with NaCl as the electrolyte, including several chlorinated and non-chlorinated dimers and trimers; these findings suggest that indirect oxidation mediated by chlorine radicals and other chlorine active species also takes place. In this view, the role of the supporting electrolyte is crucial since it can influence both reaction kinetics and pathways. Copyright © 2016 Elsevier Ltd. All rights reserved.

  13. Potential and pH dependence of photocurrent transients for boron-doped diamond electrodes in aqueous electrolyte

    International Nuclear Information System (INIS)

    Green, S.J.; Mahe, L.S.A.; Rosseinsky, D.R.; Winlove, C.P.

    2013-01-01

    Using illumination at energies below the intrinsic diamond energy gap, photocurrent transients have been recorded for boron-doped diamond (BDD) as an electrode in an aqueous electrolyte of 0.1 M KH 2 PO 4 . The commercially-supplied BDD was in the form of a free-standing, polycrystalline film grown by chemical vapour deposition (CVD), with a boron acceptor concentration of ≥10 20 cm −3 . The effects of mechanical polishing of the BDD, of electrochemical hydrogen evolution and of electrochemical oxygen evolution (in 0.1 M KH 2 PO 4 ), on the potential dependence of the photocurrent transients have been examined. Measurements of the cathodic photocurrent at light switch-on have been used to determine the photocurrent onset potential as a measure of the flatband potential. Comparison with and between related literature observations has shown broad agreement across considerably varying BDD/electrolyte systems. The flatband potential shifted positively following electrochemical oxygen evolution, indicating the formation of oxygen-containing groups on the diamond surface, these increasing the potential drop across the Helmholtz layer. For the electrochemically oxidised electrode, the cathodic photocurrent transient at a fixed potential changed reproducibly with changing solution pH, owing to the participation of the oxygen-containing surface groups in acid–base equilibrium with the solution. This clear demonstration of BDD as a photoelectrochemical pH sensor is in principle extendable to mapping the spatial variation in pH across a BDD surface by use of a focussed light spot

  14. Real-time fluorescence assay of alkaline phosphatase in living cells using boron-doped graphene quantum dots as fluorophores.

    Science.gov (United States)

    Chen, Li; Yang, Guancao; Wu, Ping; Cai, Chenxin

    2017-10-15

    This work reports a convenient and real-time assay of alkaline phosphatase (ALP) in living cells based on a fluorescence quench-recovery process at a physiological pH using the boron-doped graphene quantum dots (BGQDs) as fluorophore. The fluorescence of BGQDs is found to be effectively quenched by Ce 3+ ions because of the coordination of Ce 3+ ions with the carboxyl group of BGQDs. Upon addition of adenosine triphosphate (ATP) into the system, the quenched fluorescence can be recovered by the ALP-positive expressed cells (such as MCF-7 cells) due to the removal of Ce 3+ ions from BGQDs surface by phosphate ions, which are generated from ATP under catalytic hydrolysis of ALP that expressed in cells. The extent of fluorescence signal recovery depends on the level of ALP in cells, which establishes the basis of ALP assay in living cells. This approach can also be used for specific discrimination of the ALP expression levels in different type of cells and thus sensitive detection of those ALP-positive expressed cells (for example MCF-7 cells) at a very low abundance (10±5 cells mL -1 ). The advantages of this approach are that it has high sensitivity because of the significant suppression of the background due to the Ce 3+ ion quenching the fluorescence of BGQDs, and has the ability of avoiding false signals arising from the nonspecific adsorption of non-target proteins because it operates via a fluorescence quench-recovery process. In addition, it can be extended to other enzyme systems, such as ATP-related kinases. Copyright © 2017 Elsevier B.V. All rights reserved.

  15. Conductive Boron-Doped Graphene as an Ideal Material for Electrocatalytically Switchable and High-Capacity Hydrogen Storage.

    Science.gov (United States)

    Tan, Xin; Tahini, Hassan A; Smith, Sean C

    2016-12-07

    Electrocatalytic, switchable hydrogen storage promises both tunable kinetics and facile reversibility without the need for specific catalysts. The feasibility of this approach relies on having materials that are easy to synthesize, possessing good electrical conductivities. Graphitic carbon nitride (g-C 4 N 3 ) has been predicted to display charge-responsive binding with molecular hydrogen-the only such conductive sorbent material that has been discovered to date. As yet, however, this conductive variant of graphitic carbon nitride is not readily synthesized by scalable methods. Here, we examine the possibility of conductive and easily synthesized boron-doped graphene nanosheets (B-doped graphene) as sorbent materials for practical applications of electrocatalytically switchable hydrogen storage. Using first-principle calculations, we find that the adsorption energy of H 2 molecules on B-doped graphene can be dramatically enhanced by removing electrons from and thereby positively charging the adsorbent. Thus, by controlling charge injected or depleted from the adsorbent, one can effectively tune the storage/release processes which occur spontaneously without any energy barriers. At full hydrogen coverage, the positively charged BC 5 achieves high storage capacities up to 5.3 wt %. Importantly, B-doped graphene, such as BC 49 , BC 7 , and BC 5 , have good electrical conductivity and can be easily synthesized by scalable methods, which positions this class of material as a very good candidate for charge injection/release. These predictions pave the route for practical implementation of electrocatalytic systems with switchable storage/release capacities that offer high capacity for hydrogen storage.

  16. Boron-doped Diamond Electrodes: Electrochemical, Atomic Force Microscopy and Raman Study towards Corrosion-modifications at Nanoscale

    International Nuclear Information System (INIS)

    Kavan, Ladislav; Vlckova Zivcova, Zuzana; Petrak, Vaclav; Frank, Otakar; Janda, Pavel; Tarabkova, Hana; Nesladek, Milos; Mortet, Vincent

    2015-01-01

    Highlights: • B-doped diamond is nanostructured by corrosion-driven modifications occurring at carbonaceous impurity sites (sp 2 -carbons). • The electrochemical oxidation partly transforms a hydrogen-terminated diamond surface to O-terminated one, but the electrocatalytic activity of plasmatically O-terminated diamond is not achieved. • In contrast to all usual sp 2 carbons, the Raman spectra of B-doped diamond electrodes do not change upon electrochemical charging/discharging. - Abstract: Comparative studies of boron-doped diamonds electrodes (polycrystalline, single-crystalline, H-/O-terminated, and with different sp 3 /sp 2 ratios) indicate morphological modifications of diamond which are initiated by corrosion at nanoscale. In-situ electrochemical AFM imaging evidences that the textural changes start at non-diamond carbonaceous impurity sites treated at high positive potentials (>2.2 V vs. Ag/AgCl). The primary perturbations subsequently develop into sub-micron-sized craters. Raman spectroscopy shows that the primary erosion site is graphite-like (sp 2 -carbon), which is preferentially removed by anodic oxidation. Other non-diamond impurity, viz. tetrahedral amorphous carbon (t-aC), is less sensitive to oxidative decomposition. The diamond-related Raman features, including the B-doping-assigned modes, are intact during reversible electrochemical charging/discharging, which is a salient difference from all usual sp 2 -carbons. The electrochemical oxidation partly transforms a hydrogen-terminated diamond surface to O-terminated one, but the electrocatalytic activity of plasmatically O-terminated diamond is not achieved for a model redox couple, Fe 3+/2+ . Electrochemical impedance spectra were fitted to six different equivalent circuits. The determination of acceptor concentrations is feasible even for highly-doped diamond electrodes.

  17. Simultaneous determination of paracetamol and penicillin V by square-wave voltammetry at a bare boron-doped diamond electrode

    International Nuclear Information System (INIS)

    Švorc, Ľubomír; Sochr, Jozef; Tomčík, Peter; Rievaj, Miroslav; Bustin, Dušan

    2012-01-01

    Highlights: ► Unmodified BDD electrode = sensitive electrochemical sensor for drugs determination. ► No special pretreatment of samples except simple dilution. ► Selective method, common compounds present in urine do not interfere in high excess. ► Simultaneous determination of PAR and PEN has yet not been published in literature. - Abstract: A simple, sensitive and selective square-wave voltammetry method for simultaneous determination of paracetamol and penicillin V on a bare (unmodified) boron-doped diamond electrode has been developed. The good potential separation of about 0.35 V between the oxidation peak potentials of both drugs present in mixture was found. It was found by cyclic voltammetry that paracetamol gave quasireversible wave and penicillin V provided irreversible oxidation peak. The effect of supporting electrolyte, pH and scan rate on voltammetric response of both drugs was studied to select the optimum experimental conditions. The optimal conditions for quantitative simultaneous determination were obtained in acetate buffer solution at pH 5.0. The oxidation peak of paracetamol and penicillin V showed a systematic increase in peak currents with increase of their concentration. The calibration curves for the simultaneous determination of paracetamol and penicillin V exhibited the good linear responses within the concentration range from 0.4 to 100 μM for both drugs. The detection limit was established to 0.21 and 0.32 μM for paracetamol and penicillin V, respectively. The method proved the good sensitivity, repeatability (RSD of 1.5 and 2.1% for mixture solution of 10 μM PCM and PEN) and selectivity when influence of interferents commonly existing in human urine was negligible. The practical analytical utility of proposed method was demonstrated by simultaneous determination of paracetamol and penicillin V in human urine samples, with results similar to those obtained using a high-performance liquid chromatography method as an

  18. Electrochemical degradation of Novacron Yellow C-RG using boron-doped diamond and platinum anodes: Direct and Indirect oxidation

    International Nuclear Information System (INIS)

    Rocha, J.H. Bezerra; Gomes, M.M. Soares; Santos, E. Vieira dos; Moura, E.C. Martins de; Silva, D. Ribeiro da; Quiroz, M.A.; Martínez-Huitle, C.A.

    2014-01-01

    Graphical abstract: - Highlights: • Nature of electrode material decides the electrocatalytic mechanism followed. • Electrogenerated strong oxidants on BDD surface improve the color and organic load removal. • Chlorine active species act in solution cage oxidizing organic matter. - Abstract: The present study discusses the electrochemical degradation process of a textile dye, Novacron Yellow C-RG (NY), dissolved in synthetic wastewaters, via direct and indirect oxidation. Experiments were conducted using boron-doped diamond (BDD) and platinum supported on Ti (Pt/Ti) electrodes in the absence and presence of NaCl in the solution. The direct process for removing color is relatively similar for both anodes, while the electrochemical degradation is significantly accelerated by the presence of halogen salt in the solution. Interestingly, it does not depend on applied current density, but rather on NaCl concentration. Therefore, the electrochemical processes (direct/indirect) favor specific oxidation pathways depending on electrocatalytic material. Whereas, the Pt/Ti anode favors preferentially color removal by direct and indirect oxidation (100% of color removal) due to the fragmentation of the azo dye group; BDD electrode favors color and organic load removals in both processes (95% and up to 87%, respectively), due to the rupture of dye in different parts of its chemical structure. Parameters of removal efficiency and energy consumption for the electrochemical process were estimated. Finally, an explanation has been attempted for the role of halide, in relation with the oxygen evolution reaction, concomitant with the electrochemical incineration as well as electrocatalytic mechanisms, for each one of the electrodes used

  19. Electrochemical treatment of reverse osmosis concentrate on boron-doped electrodes in undivided and divided cell configurations

    Energy Technology Data Exchange (ETDEWEB)

    Bagastyo, Arseto Y. [Advanced Water Management Centre, The University of Queensland, St Lucia, QLD 4072 (Australia); Department of Environmental Engineering, Institut Teknologi Sepuluh Nopember, Surabaya 60111 (Indonesia); Batstone, Damien J. [Advanced Water Management Centre, The University of Queensland, St Lucia, QLD 4072 (Australia); Kristiana, Ina [Curtin Water Quality Research Centre, Resources and Chemistry Precinct, Department of Chemistry, Curtin University, Bentley, Perth, WA 6102 (Australia); Escher, Beate I. [National Research Centre for Environmental Toxicology (Entox), The University of Queensland, Brisbane, QLD 4108 (Australia); Joll, Cynthia [Curtin Water Quality Research Centre, Resources and Chemistry Precinct, Department of Chemistry, Curtin University, Bentley, Perth, WA 6102 (Australia); Radjenovic, Jelena, E-mail: j.radjenovic@uq.edu.au [Advanced Water Management Centre, The University of Queensland, St Lucia, QLD 4072 (Australia)

    2014-08-30

    Highlights: • 100% of COD and ∼70% of DOC was removed in both cell configurations. • ∼21.7 mg L{sup −1} of AOCl and ∼2.3 mg L{sup −1} of AOBr was formed regardless of the membrane use. • The TEQ was far lower than expected given the high AOCl concentrations. • The undivided cell consumed lower energy compared to the divided cell. - Abstract: An undivided electrolytic cell may offer lower electrochlorination through reduction of chlorine/hypochlorite at the cathode. This study investigated the performance of electrooxidation of reverse osmosis concentrate using boron-doped diamond electrodes in membrane-divided and undivided cells. In both cell configurations, similar extents of chemical oxygen demand and dissolved organic carbon removal were obtained. Continuous formation of chlorinated organic compounds was observed regardless of the membrane presence. However, halogenation of the organic matter did not result in a corresponding increase in toxicity (Vibrio fischeri bioassay performed on extracted samples), with toxicity decreasing slightly until 10 Ah L{sup −1}, and generally remaining near the initial baseline-toxicity equivalent concentration (TEQ) of the raw concentrate (i.e., ∼2 mg L{sup −1}). The exception was a high range toxicity measure in the undivided cell (i.e., TEQ = 11 mg L{sup −1} at 2.4 Ah L{sup −1}), which rapidly decreased to 4 mg L{sup −1}. The discrepancy between the halogenated organic matter and toxicity patterns may be a consequence of volatile and/or polar halogenated by-products formed in oxidation by OH· electrogenerated at the anode. The undivided cell exhibited lower energy compared to the divided cell, 0.25 kWh gCOD{sup −1} and 0.34 kWh gCOD{sup −1}, respectively, yet it did not demonstrate any improvement regarding by-products formation.

  20. Boron doped diamond synthesized from detonation nanodiamond in a C-O-H fluid at high pressure and high temperature

    Science.gov (United States)

    Shakhov, Fedor M.; Abyzov, Andrey M.; Takai, Kazuyuki

    2017-12-01

    Boron doped diamond (BDD) was synthesized under high pressure and high temperature (HPHT) of 7 GPa, 1230 °C in a short time of 10 s from a powder mixtures of detonation nanodiamond (DND), pentaerythritol C5H8(OH)4 and amorphous boron. SEM, TEM, XRD, XPS, FTIR and Raman spectroscopy indicated that BDD nano- and micro-crystals have formed by consolidation of DND particles (4 nm in size). XRD showed the enlargement of crystallites size to 6-80 nm and the increase in diamond lattice parameter by 0.02-0.07% without appearance of any microstrains. Raman spectroscopy was used to estimate the content of boron atoms embedded in the diamond lattice. It was found that the Raman diamond peak shifts significantly from 1332 cm-1 to 1290 cm-1 without appearance of any non-diamond carbon. The correlation between Raman peak position, its width, and boron content in diamond is proposed. Hydrogenated diamond carbon in significant amount was detected by IR spectroscopy and XPS. Due to the doping with boron content of about 0.1 at%, the electrical conductivity of the diamond achieved approximately 0.2 Ω-1 cm-1. Reaction mechanism of diamond growth (models of recrystallization and oriented attachment) is discussed, including the initial stages of pentaerythritol pyrolysis and thermal desorption of functional groups from the surface of DND particles with the generation of supercritical fluid of low-molecular substances (H2O, CH4, CO, CO2, etc.), as well as byproducts formation (B2O3, B4C).

  1. Electrochemical destruction of chlorophenoxy herbicides by anodic oxidation and electro-Fenton using a boron-doped diamond electrode

    International Nuclear Information System (INIS)

    Brillas, Enric; Boye, Birame; Sires, Ignasi; Garrido, Jose Antonio; Rodriguez, Rosa Maria; Arias, Conchita; Cabot, Pere-Lluis; Comninellis, Christos

    2004-01-01

    The degradation of herbicides 4-chlorophenoxyacetic acid (4-CPA), 4-chloro-2-methylphenoxyacetic acid (MCPA), 2,4-dichlorophenoxyacetic acid (2,4-D) and 2,4,5-trichlorophenoxyacetic acid (2,4,5-T) in aqueous medium of pH 3.0 has been comparatively studied by anodic oxidation and electro-Fenton using a boron-doped diamond (BDD) anode. All solutions are totally mineralized by electro-Fenton, even at low current, being the process more efficient with 1 mM Fe 2+ as catalyst. This is due to the production of large amounts of oxidant hydroxyl radical (OH·) on the BDD surface by water oxidation and from Fenton's reaction between added Fe 2+ and H 2 O 2 electrogenerated at the O 2 -diffusion cathode. The herbicide solutions are also completely depolluted by anodic oxidation. Although a quicker degradation is found at the first stages of electro-Fenton, similar times are required for achieving overall mineralization in both methods. The decay kinetics of all herbicides always follows a pseudo first-order reaction. Reversed-phase chromatography allows detecting 4-chlorophenol, 4-chloro-o-cresol, 2,4-dichlorophenol and 2,4,5-trichlorophenol as primary aromatic intermediates of 4-CPA, MCPA, 2,4-D and 2,4,5-T, respectively. Dechlorination of these products gives Cl - , which is slowly oxidized on BDD. Ion-exclusion chromatography reveals the presence of persistent oxalic acid in electro-Fenton by formation of Fe 3+ -oxalato complexes, which are slowly destroyed by OH· adsorbed on BDD. In anodic oxidation, oxalic acid is mineralized practically at the same rate as generated

  2. H-terminated polycrystalline boron doped diamond electrode for geochemical sensing into underground components of nuclear repositories

    International Nuclear Information System (INIS)

    Boussadi, A.; Betelu, S.; Ignatiadis, I.; Silva, F.

    2012-01-01

    Document available in extended abstract form only. Nuclear waste repositories are being installed in deep excavated rock formations in some places in Europe to isolate and store radioactive waste. In France, Callovo-Oxfordian formation (COx) is potential candidate for nuclear waste repository. It is thus necessary to measure in situ the state of a structure's health during its entire life. The monitoring of the near-field rock and the knowledge of the geochemical transformations can be carried out by a set of sensors for a sustainable management of long-term safety, reversibility and retrievability. Among the chemical parameters, the most significant are pH, conductivity and redox potential. Wide band gap semiconductors are favored materials for chemical sensing because of their high stability to many chemical agents. Among the wide band gap materials, Chemical Vapor Deposition (CVD) boron doped diamond (BDD) benefits from a large band gap, which gives rise to a wide electrochemical potential window. It is moreover described as a radiation, corrosion and bio-corrosion resistant. These remarkable properties, in addition to a low double layer capacity and a low residual current, make BDD a promising material for geochemical sensor elaboration. This work aimed to investigate BDD- based electrodes coated with p-type polycrystalline BDD-hydrogen- terminated surfaces (1 cm 2 ) for pH and/or redox measurements into the underground components of nuclear repositories. The boron-doped p-type channel was grown in a microwave plasma reactor (BJS 150). The boron-doped channel was hydrogen terminated by a hydrogen plasma treatment in the CVD reactor, resulting in full saturation of the surface carbon bonds with hydrogen atoms. Scanning Electron Microscopy (SEM) of the polycrystalline BDD coating with a Bore/Carbon ratio of 500 ppm shows the typical columnar growth of the polycrystalline CVD diamond. A homogeneous surface was observed concerning the crystallite size which average

  3. Boron doped diamond electrodes for the dopamine identification by anodic stripping voltammetry

    International Nuclear Information System (INIS)

    Vojs, M.; Behul, M.; Michniak, P.; Rehacek, V.; Tvarozek, V.; Vesely, M.; Rossberg, M.; Schaaf, P.

    2012-01-01

    Polycrystalline BDD films 200-280 nm thick (Fig. 1) were produced in the double bias enhanced HF CVD reactor with sheet resistivity ∼ 100 Ω/sq. As a substrate, highly conductive (0.008-0.024 Ωcm) N (100) type silicon substrate was used with ∼ 200 nm wet SiO 2 oxide. Throughout the deposition, gas flows in reaction chamber were controlled to be 1 % CH 4 in H 2 and trymethylboron (TMB) in the range of 0-200 sccm (corresponding to 0-13 333 ppm of B/C). We have compared different measurements in presence of biological molecules (DA) with various BDD electrodes. These electrodes exhibited very high sensitivity, long-therm stability and high reproducibility. A very good performance (LOD = 6.02, R 2 =0.9921) of the BDD surface has been demonstrated only for very high 10 000 ppm B/C ratio (B doping levels n = 3.6·10 21 cm -3 ) for surface sensitive reactions in complex biological matrices. (authors)

  4. Synthesis and Doping of Silicon Nanocrystals for Versatile Nanocrystal Inks

    Science.gov (United States)

    Kramer, Nicolaas Johannes

    atmospheric pressures necessitates high plasma densities to reach temperatures required for crystallization of nanoparticles. Using experimentally determined plasma properties from the literature, the model estimates the nanoparticle temperature that is achieved during synthesis at atmospheric pressures. It was found that temperatures well above those required for crystallization can be achieved. Now that the synthesis of nanocrystals is understood, the second half of this thesis will focus on doping of the nanocrystals. The doping of semiconductor nanocrystals, which is vital for the optimization of nanocrystal-based devices, remains a challenge. Gas phase plasma approaches have been very successful in incorporating dopant atoms into nanocrystals by simply adding a dopant precursor during synthesis. However, little is known about the electronic activation of these dopants. This was investigated with field-effect transistor measurements using doped silicon nanocrystal films. It was found that, analogous to bulk silicon, boron and phosphorous electronically dope silicon nanocrystals. However, the dopant activation efficiency remains low as a result of self-purification of the dopants to the nanocrystal surface. Next the plasmonic properties of heavily doped silicon nanocrystals was explored. While the synthesis method was identical, the plasmonic behavior of phosphorus-doped and boron-doped nanocrystals was found the be significantly different. Phosphorus-doped nanocrystals exhibit a plasmon resonance immediately after synthesis, while boron-doped nanocrystals require a post-synthesis annealing or oxidation treatment. This is a result of the difference in dopant location. Phosphorus is more likely to be incorporated into the core of the nanocrystal, while the majority of boron is placed on the surface of the nanocrystal. The oxidized boron-doped particles exhibit stable plasmonic properties, and therefore this allows for the production of air-stable silicon-based plasmonic

  5. Electrochemical reduction of oxygen on gold and boron-doped diamond electrodes in ambient temperature, molten acetamide-urea-ammonium nitrate eutectic melt

    International Nuclear Information System (INIS)

    Dilimon, V.S.; Venkata Narayanan, N.S.; Sampath, S.

    2010-01-01

    The electrochemical reduction of oxygen has been studied on gold, boron-doped diamond (BDD) and glassy carbon (GC) electrodes in a ternary eutectic mixture of acetamide (CH 3 CONH 2 ), urea (NH 2 CONH 2 ) and ammonium nitrate (NH 4 NO 3 ). Cyclic voltammetry (CV), differential pulse voltammetry (DPV), chronoamperometry and rotating disk electrode (RDE) voltammetry techniques have been employed to follow oxygen reduction reaction (ORR). The mechanism for the electrochemical reduction of oxygen on polycrystalline gold involves 2-step, 2-electron pathways of O 2 to H 2 O 2 and further reduction of H 2 O 2 to H 2 O. The first 2-electron reduction of O 2 to H 2 O 2 passes through superoxide intermediate by 1-electron reduction of oxygen. Kinetic results suggest that the initial 1-electron reduction of oxygen to HO 2 is the rate-determining step of ORR on gold surfaces. The chronoamperometric and RDE studies show a potential dependent change in the number of electrons on gold electrode. The oxygen reduction reaction on boron-doped diamond (BDD) seems to proceed via a direct 4-electron process. The reduction of oxygen on the glassy carbon (GC) electrode is a single step, irreversible, diffusion limited 2-electron reduction process to peroxide.

  6. Increased radiation resistance in lithium-counterdoped silicon solar cells

    Science.gov (United States)

    Weinberg, I.; Swartz, C. K.; Mehta, S.

    1984-01-01

    Lithium-counterdoped n(+)p silicon solar cells are found to exhibit significantly increased radiation resistance to 1-MeV electron irradiation when compared to boron-doped n(+)p silicon solar cells. In addition to improved radiation resistance, considerable damage recovery by annealing is observed in the counterdoped cells at T less than or equal to 100 C. Deep level transient spectroscopy measurements are used to identify the defect whose removal results in the low-temperature aneal. It is suggested that the increased radiation resistance of the counterdoped cells is primarily due to interaction of the lithium with interstitial oxygen.

  7. Electrogeneration of disinfection byproducts at a boron-doped diamond anode with resorcinol as a model substance

    International Nuclear Information System (INIS)

    Li Hongna; Ni Jinren

    2012-01-01

    Highlights: ► DBPs formation was studied in BDD cell with several organics. ► Accumulated chloroform was wholly mineralized in the electrolysis. ► Chlorate produced was oxidized to perchlorate as electrolysis continued. ► Inorganic byproducts should be carefully watched in electrolysis with BDD. ► Resorcinol had the greatest reactivity for DBPs production in the studied precursors. - Abstract: Electrochemical disinfection in chloride electrolyte with a boron-doped diamond (BDD) electrode has unique advantages due to the high oxidizing ability of active chlorine and reactive oxygen species produced under certain conditions in the electrolysis. However, the electrogeneration of disinfection byproducts (DBPs) in the presence of organics in the system has rarely been reported. In this study, the discontinuous formation of DBPs (chloroform, chlorate and perchlorate) was investigated in model water containing chloride electrolyte (10 mM) with a BDD anode in the presence of resorcinol (0.5 mM) at a current density of 20 mA cm −2 . We found that the formation of chloroform and chlorate increased with the free available chlorine production at the beginning and reached peaks at 2 h (0.01 mM), 4 h (1.67 mM), respectively. When the free available chlorine started to decrease, chloroform was gradually mineralized and chlorate was oxidized to perchlorate due to the strong and non-selective oxidizing ability of the BDD. After electrolysis for 25 h, only perchlorate was left (3.84 mM). So inorganic DBPs should be carefully watched in the BDD system. The chloride concentration in the electrolyte affected the production of all three DBPs, due to its influence on the active chlorine production. Organic was not involved in the chlorate and perchlorate formation, and thus the resorcinol concentration had little impact on inorganic DBPs. DBPs formation at acidic pH was lower than that in the basic condition, mainly due to the different forms of resorcinol and chlorine

  8. FTIR studies of swift silicon and oxygen ion irradiated porous silicon

    International Nuclear Information System (INIS)

    Bhave, Tejashree M.; Hullavarad, S.S.; Bhoraskar, S.V.; Hegde, S.G.; Kanjilal, D.

    1999-01-01

    Fourier Transform Infrared Spectroscopy has been used to study the bond restructuring in silicon and oxygen irradiated porous silicon. Boron doped p-type (1 1 1) porous silicon was irradiated with 10 MeV silicon and a 14 MeV oxygen ions at different doses ranging between 10 12 and 10 14 ions cm -2 . The yield of PL in porous silicon irradiated samples was observed to increase considerably while in oxygen irradiated samples it was seen to improve only by a small extent for lower doses whereas it decreased for higher doses. The results were interpreted in view of the relative intensities of the absorption peaks associated with O-Si-H and Si-H stretch bonds

  9. Sensitivity of energy-packed compounds based on superfine and nanoporous silicon to pulsed electrical treatments

    Energy Technology Data Exchange (ETDEWEB)

    Zegrya, G. G. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Savenkov, G. G. [Saint-Petersburg State Engineering Institute (Technical University) (Russian Federation); Morozov, V. A. [Saint-Petersburg State University (Russian Federation); Zegrya, A. G.; Ulin, N. V., E-mail: Ulin@mail.ioffe.ru; Ulin, V. P. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Lukin, A. A. [Saint-Petersburg State Engineering Institute (Technical University) (Russian Federation); Bragin, V. A.; Oskin, I. A. [AO Scientific Production Association Poisk (Russian Federation); Mikhailov, Yu. M. [Russian Academy of Sciences, Institute of Problems of Chemical Physics (Russian Federation)

    2017-04-15

    The sensitivity of an energy-packed compound based on nanoporous silicon and calcium perchlorate to a high-current electron beam is studied. The initiation of explosive transformations in a mixture of potassium picrate with a highly dispersed powder of boron-doped silicon by means of a high-voltage discharge is examined. It is shown that explosive transformation modes (combustion and explosion) appear in the energy-packed compound under study upon its treatment with an electron beam. A relationship is established between the explosive transformation modes and the density of the energy-packed compound and between the breakdown (initiation) voltage and the mass fraction of the silicon powder.

  10. Radiation damage and defect behavior in ion-implanted, lithium counterdoped silicon solar cells

    Science.gov (United States)

    Weinberg, I.; Mehta, S.; Swartz, C. K.

    1984-01-01

    Boron doped silicon n+p solar cells were counterdoped with lithium by ion implantation and the resuitant n+p cells irradiated by 1 MeV electrons. The function of fluence and a Deep Level Transient Spectroscopy (DLTS) was studied to correlate defect behavior with cell performance. It was found that the lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. It is concluded that the annealing behavior is controlled by dissociation and recombination of defects. The DLTS studies show that counterdoping with lithium eliminates at least three deep level defects and results in three new defects. It is speculated that the increased radiation resistance of the counterdoped cells is due primarily to the interaction of lithium with oxygen, single vacanies and divacancies and that the lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

  11. Effects of processing and dopant on radiation damage removal in silicon solar cells

    Science.gov (United States)

    Weinberg, I.; Brandhorst, H. W., Jr.; Swartz, C. K.; Mehta, S.

    1982-01-01

    Gallium and boron doped silicon solar cells, processed by ion-implantation followed by either laser or furnace anneal were irradiated by 1 MeV electrons and their post-irradiation recovery by thermal annealing determined. During the post-irradiation anneal, gallium-doped cells prepared by both processes recovered more rapidly and exhibited none of the severe reverse annealing observed for similarly processed 2 ohm-cm boron doped cells. Ion-implanted furnace annealed 0.1 ohm-cm boron doped cells exhibited the lowest post-irradiation annealing temperatures (200 C) after irradiation to 5 x 10 to the 13th e(-)/sq cm. The drastically lowered recovery temperature is attributed to the reduced oxygen and carbon content of the 0.1 ohm-cm cells. Analysis based on defect properties and annealing kinetics indicates that further reduction in annealing temperature should be attainable with further reduction in the silicon's carbon and/or divacancy content after irradiation.

  12. Polycrystalline ZnO: B grown by LPCVD as TCO for thin film silicon solar cells

    International Nuclear Information System (INIS)

    Fay, Sylvie; Steinhauser, Jerome; Nicolay, Sylvain; Ballif, Christophe

    2010-01-01

    Conductive zinc oxide (ZnO) grown by low pressure chemical vapor deposition (LPCVD) technique possesses a rough surface that induces an efficient light scattering in thin film silicon (TF Si) solar cells, which makes this TCO an ideal candidate for contacting such devices. IMT-EPFL has developed an in-house LPCVD process for the deposition of nanotextured boron doped ZnO films used as rough TCO for TF Si solar cells. This paper is a general review and synthesis of the study of the electrical, optical and structural properties of the ZnO:B that has been performed at IMT-EPFL. The influence of the free carrier absorption and the grain size on the electrical and optical properties of LPCVD ZnO:B is discussed. Transport mechanisms at grain boundaries are studied. It is seen that high doping of the ZnO grains facilitates the tunnelling of the electrons through potential barriers that are located at the grain boundaries. Therefore, even if these potential barriers increase after an exposition of the film to a humid atmosphere, the heavily doped LPCVD ZnO:B layers show a remarkable stable conductivity. However, the introduction of diborane in the CVD reaction induces also a degradation of the intra-grain mobility and increases over-proportionally the optical absorption of the ZnO:B films. Hence, the necessity to finely tune the doping level of LPCVD ZnO:B films is highlighted. Finally, the next challenges to push further the optimization of LPCVD ZnO:B films for thin film silicon solar cells are discussed, as well as some remarkable record cell results achieved with LPCVD ZnO:B as front electrode.

  13. Amorphous silicon passivation for 23.3% laser processed back contact solar cells

    Science.gov (United States)

    Carstens, Kai; Dahlinger, Morris; Hoffmann, Erik; Zapf-Gottwick, Renate; Werner, Jürgen H.

    2017-08-01

    This paper presents amorphous silicon deposited at temperatures below 200 °C, leading to an excellent passivation layer for boron doped emitter and phosphorus doped back surface field areas in interdigitated back contact solar cells. A higher deposition temperature degrades the passivation of the boron emitter by an increased hydrogen effusion due to lower silicon hydrogen bond energy, proved by hydrogen effusion measurements. The high boron surface doping in crystalline silicon causes a band bending in the amorphous silicon. Under these conditions, at the interface, the intentionally undoped amorphous silicon becomes p-type conducting, with the consequence of an increased dangling bond defect density. For bulk amorphous silicon this effect is described by the defect pool model. We demonstrate, that the defect pool model is also applicable to the interface between amorphous and crystalline silicon. Our simulation shows the shift of the Fermi energy towards the valence band edge to be more pronounced for high temperature deposited amorphous silicon having a small bandgap. Application of optimized amorphous silicon as passivation layer for the boron doped emitter and phosphorus doped back surface field on the rear side of laser processed back contact solar cells, fabricated using four laser processing steps, yields an efficiency of 23.3%.

  14. Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zeng, Xiangbin, E-mail: eexbzeng@mail.hust.edu.cn; Wen, Xixing; Sun, Xiaohu; Liao, Wugang; Wen, Yangyang

    2016-04-30

    Boron-doped zinc oxide (BZO) films were grown by metal organic chemical vapor deposition. The influence of B{sub 2}H{sub 6} flow rate and substrate temperature on the microstructure, optical, and electrical properties of BZO films was investigated by X-ray diffraction spectrum, scanning electron microscope, optical transmittance spectrum, and Hall measurements. The BZO films with optical transmittance above 85% in the visible and infrared light range, resistivity of 0.9–1.0 × 10{sup −3} Ω cm, mobility of 16.5–25.5 cm{sup 2}/Vs, and carrier concentration of 2.2–2.7 × 10{sup 20} cm{sup −3} were deposited under optimized conditions. The optimum BZO films were applied on the bifacial BZO/p-type a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n{sup +}-type a-Si:H/BZO heterojunction solar cell as both front and back transparent electrodes. Meanwhile, the bifacial heterojunction solar cell with indium tin oxide (ITO) as both front and back transparent electrodes was fabricated. The efficiencies of 17.788% (open-circuit voltage: 0.628 V, short-circuit current density: 41.756 mA/cm{sup 2} and fill factor: 0.678) and 16.443% (open-circuit voltage: 0.590 V, short-circuit current density: 36.515 mA/cm{sup 2} and fill factor: 0.762) were obtained on the a-Si/c-Si heterojunction solar cell with BZO and ITO transparent electrodes, respectively. - Highlights: • Boron-doped zinc oxide films with low resistivity were fabricated. • The boron-doped zinc oxide films have the high transmittance. • B-doped ZnO film was applied in a-Si:H/c-Si solar cell as transparent electrodes. • The a-Si:H/c-Si solar cell with efficiency of 17.788% was obtained.

  15. Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

    International Nuclear Information System (INIS)

    Zeng, Xiangbin; Wen, Xixing; Sun, Xiaohu; Liao, Wugang; Wen, Yangyang

    2016-01-01

    Boron-doped zinc oxide (BZO) films were grown by metal organic chemical vapor deposition. The influence of B_2H_6 flow rate and substrate temperature on the microstructure, optical, and electrical properties of BZO films was investigated by X-ray diffraction spectrum, scanning electron microscope, optical transmittance spectrum, and Hall measurements. The BZO films with optical transmittance above 85% in the visible and infrared light range, resistivity of 0.9–1.0 × 10"−"3 Ω cm, mobility of 16.5–25.5 cm"2/Vs, and carrier concentration of 2.2–2.7 × 10"2"0 cm"−"3 were deposited under optimized conditions. The optimum BZO films were applied on the bifacial BZO/p-type a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n"+-type a-Si:H/BZO heterojunction solar cell as both front and back transparent electrodes. Meanwhile, the bifacial heterojunction solar cell with indium tin oxide (ITO) as both front and back transparent electrodes was fabricated. The efficiencies of 17.788% (open-circuit voltage: 0.628 V, short-circuit current density: 41.756 mA/cm"2 and fill factor: 0.678) and 16.443% (open-circuit voltage: 0.590 V, short-circuit current density: 36.515 mA/cm"2 and fill factor: 0.762) were obtained on the a-Si/c-Si heterojunction solar cell with BZO and ITO transparent electrodes, respectively. - Highlights: • Boron-doped zinc oxide films with low resistivity were fabricated. • The boron-doped zinc oxide films have the high transmittance. • B-doped ZnO film was applied in a-Si:H/c-Si solar cell as transparent electrodes. • The a-Si:H/c-Si solar cell with efficiency of 17.788% was obtained.

  16. The interplay between hydrogen evolution reaction and nitrate reduction on boron-doped diamond in aqueous solution: the effect of alkali cations

    International Nuclear Information System (INIS)

    Manzo-Robledo, A.; Lévy-Clément, C.; Alonso-Vante, N.

    2014-01-01

    The nitrate ion reduction was studied on boron-doped diamond (BDD) electrodes by real-time on-line differential electrochemical mass spectrometry (DEMS) coupled with chronoamperometry in K + , Na + cation-containing electrolyte solutions. It was found, via steady state voltammetry, that the hydrogen evolution reaction (HER) was affected by the presence of K + or Na + . A moderate HER occurs in K + -containing electrolyte solution favoring the reaction between NO 3 − and H 2 species, whereas in Na + -containing electrolyte solutions, the HER kinetics was more important leading to a suppression of molecular nitrogen generation. The use of isotope-labeled nitrogen and DEMS confirmed the influence of alkali cations toward the nitrate ion reduction

  17. Highly efficient and energy-saving sectional treatment of landfill leachate with a synergistic system of biochemical treatment and electrochemical oxidation on a boron-doped diamond electrode

    International Nuclear Information System (INIS)

    Zhao Guohua; Pang Yaning; Liu Lei; Gao Junxia; Lv Baoying

    2010-01-01

    In this paper, a synergistic combination of the biochemical treatment and electrochemical oxidation (SBEO) of landfill leachate with sectional treatment on a boron-doped diamond (BDD) electrode is proposed. The first stage involves the synergistic system of biochemical treatment and electrochemical oxidation. Then, the second stage is followed by individual biochemical treatment. Comparisons among the SBEO, electrochemical oxidation, biochemical treatment and biochemical treatment with the pretreatment of electrochemical oxidation are made systematically, which show that this method is both highly efficient and energy-saving. The higher TOC removal and low energy cost on the BDD electrode can be explained by the conversion of the bio-refractory pollutants to biodegradable organics in the electrochemical oxidation process, improving the current efficiency and reducing the energy cost. The treated wastewater is degraded only with biochemical treatment in the second stage, which further improves efficiency and reduced the energy cost.

  18. Electrolyte influence on the Cu nanoparticles electrodeposition onto boron doped diamond electrode; Influencia do eletrolito na eletrodeposicao de nanoparticulas de Cu sobre eletrodo de diamante dopado com boro

    Energy Technology Data Exchange (ETDEWEB)

    Matsushima, Jorge Tadao; Santos, Laura Camila Diniz; Couto, Andrea Boldarini; Baldan, Mauricio Ribeiro; Ferreira, Neidenei Gomes [Instituto Nacional de Pesquisas Espaciais (INPE), Sao Jose dos Campos, SP (Brazil)

    2012-07-01

    This paper presents the electrolyte influence on deposition and dissolution processes of Cu nanoparticles on boron doped diamond electrodes (DDB). Morphological, structural and electrochemical analysis showed BDD films with good reproducibility, quality and reversible in a specific redox system. Electrodeposition of Cu nanoparticles on DDB electrodes in three different solutions was influenced by pH and ionic strength of the electrolytic medium. Analyzing the process as function of the scan rate, it was verified a better efficiency in 0,5 mol L{sup -1} Na{sub 2}SO{sub 4} solution. Under the influence of the pH and ionic strength, Cu nanoparticles on DDB may be obtained with different morphologies and it was important for defining the desired properties. (author)

  19. Improved stability of titanium based boron-doped chemical vapor deposited diamond thin-film electrode by modifying titanium substrate surface

    International Nuclear Information System (INIS)

    Lim, P.Y.; Lin, F.Y.; Shih, H.C.; Ralchenko, V.G.; Varnin, V.P.; Pleskov, Yu.V.; Hsu, S.F.; Chou, S.S.; Hsu, P.L.

    2008-01-01

    The film quality and electrochemical properties of BDD (boron-doped diamond) thin films grown by hot-filament chemical vapor deposition technique on titanium substrates that had been subjected to a range of pre-treatment processes were evaluated. The pre-roughened Ti-substrates are shown to support more adherent BDD films. It is evident that acid-etching the Ti-substrate involves surface hydrogenation that enhances nucleation and formation of diamond thereon. The prepared BDD film exhibits wide potential window and electrochemical reversibility. It also demonstrated a better long-term electrochemical stability based on the low variation in voltametric background current upon the exposing of the electrodes to repeated cycles of electrochemical metal deposition/stripping process

  20. A simple square-wave voltammetric method for the determination of scopolamine in pharmaceuticals using a boron-doped diamond electrode

    Directory of Open Access Journals (Sweden)

    Simone Birkheur Santos

    2014-01-01

    Full Text Available A simple procedure is described for the determination of scopolamine by square-wave voltammetry using a cathodically pretreated boron-doped diamond electrode. Cyclic voltammetry studies indicate that the oxidation of scopolamine is irreversible at a peak potential of 1.59 V (vs. Ag/AgCl (3.0 mol L-1 KCl in a 0.50 mol L-1 sulfuric acid solution. Under optimized conditions, the analytical curve obtained was linear (r = 0.9996 for the scopolamine concentration range of 1.0 to 110 µmol L-1, with a detection limit of 0.84 µmol L-1. The method was successfully applied to the determination of scopolamine in pharmaceutical formulations with minimum sample preparation.

  1. Electrochemically deposited Cu{sub 2}O cubic particles on boron doped diamond substrate as efficient photocathode for solar hydrogen generation

    Energy Technology Data Exchange (ETDEWEB)

    Mavrokefalos, Christos K. [Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Mansfield Road, Oxford, OX1 3TA, England (United Kingdom); Hasan, Maksudul, E-mail: maksudul.hasan@chem.ox.ac.uk [Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Mansfield Road, Oxford, OX1 3TA, England (United Kingdom); Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland); Rohan, James F. [Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland); Compton, Richard G. [Department of Chemistry, Physical and Theoretical Chemistry Laboratory, University of Oxford, South Parks Road, Oxford, OX1 3QZ, England (United Kingdom); Foord, John S., E-mail: john.foord@chem.ox.ac.uk [Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Mansfield Road, Oxford, OX1 3TA, England (United Kingdom)

    2017-06-30

    Highlights: • Fabrication of low-cost photocathode by electrochemical method is described. • Boron-doped diamond is presented as catalyst support. • NiO nanoparticles on Cu{sub 2}O surface enhances photocurrent and electrode stability. • Synergy of metallic interaction between Cu and Ni leads to high efficiency. - Abstract: Herein, we report a novel photocathode for the water splitting reaction. The electrochemical deposition of Cu{sub 2}O particles on boron doped diamond (BDD) electrodes and the subsequent decoration with NiO nanoparticles by a dip coating method to act as co-catalyst for hydrogen evolution reaction is described. The morphology analysis by scanning electron microscope (SEM) revealed that Cu{sub 2}O particles are cubic and decorated sporadically with NiO nanoparticles. X-ray photoelectron spectroscopy (XPS) confirmed the electronic interaction at the interface between Cu{sub 2}O and NiO through a binding energy shift of the main Cu 2p peak. The photoelectrochemical (PEC) performance of NiO-Cu{sub 2}O/BDD showed a much higher current density (−0.33 mA/cm{sup 2}) and photoconversion efficiency (0.28%) compared to the unmodified Cu{sub 2}O/BDD electrode, which are only −0.12 mA/cm{sup 2} and 0.06%, respectively. The enhancement in PEC performance is attributable to the synergy of NiO as an electron conduction mediator leading to the enhanced charge separation and transfer to the reaction interface for hydrogen evolution as evidenced by electrochemical impedance spectroscopy (EIS) and charge carrier density calculation. Stability tests showed that the NiO nanoparticles loading content on Cu{sub 2}O surface is a crucial parameter in this regard.

  2. Mercury-free sono-electroanalytical detection of lead in human blood by use of bismuth-film-modified boron-doped diamond electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Kruusma, Jaanus [Institute of Physical Chemistry, University of Tartu, Jakobi 2, 51013, Tartu (Estonia); Banks, Craig E.; Compton, Richard G. [Physical and Theoretical Chemistry Laboratory, Oxford University, South Parks Road, OX1 3QZ, Oxford (United Kingdom)

    2004-06-01

    We report the electroanalytical determination of lead by anodic stripping voltammetry at in-situ-formed, bismuth-film-modified, boron-doped diamond electrodes. Detection limits in 0.1 mol L{sup -1} nitric acid solution of 9.6x10{sup -8} mol L{sup -1} (0.2 ppb) and 1.1x10{sup -8} mol L{sup -1} (2.3 ppb) were obtained after 60 and 300 s deposition times, respectively. An acoustically assisted deposition procedure was also investigated and found to result in improved limits of detection of 2.6 x 10{sup -8} mol L{sup -1} (5.4 ppb) and 8.5 x 10{sup -10} mol L{sup -1} (0.18 ppb) for 60 and 300 s accumulation times, respectively. Furthermore, the sensitivity obtained under quiescent and insonated conditions increased from 5.5 (quiescent) to 76.7 A mol{sup -1} L (insonated) for 60 s accumulation and from 25.8 (quiescent) to 317.6 A mol{sup -1} L (insonated) for 300 s accumulation. Investigation of the use of ultrasound with diluted blood revealed detection limits of the order of 10{sup -8} mol L{sup -1} were achievable with excellent inter- and intra-reproducibility and sensitivity of 411.9 A mol{sup -1} L. For the first time, electroanalytical detection of lead in diluted blood is shown to be possible by use of insonated in-situ-formed bismuth-film-modified boron-doped diamond electrodes. This method is a rapid, sensitive, and non-toxic means of clinical sensing of lead in whole human blood. (orig.)

  3. An All-Solid-State pH Sensor Employing Fluorine-Terminated Polycrystalline Boron-Doped Diamond as a pH-Insensitive Solution-Gate Field-Effect Transistor.

    Science.gov (United States)

    Shintani, Yukihiro; Kobayashi, Mikinori; Kawarada, Hiroshi

    2017-05-05

    A fluorine-terminated polycrystalline boron-doped diamond surface is successfully employed as a pH-insensitive SGFET (solution-gate field-effect transistor) for an all-solid-state pH sensor. The fluorinated polycrystalline boron-doped diamond (BDD) channel possesses a pH-insensitivity of less than 3mV/pH compared with a pH-sensitive oxygenated channel. With differential FET (field-effect transistor) sensing, a sensitivity of 27 mv/pH was obtained in the pH range of 2-10; therefore, it demonstrated excellent performance for an all-solid-state pH sensor with a pH-sensitive oxygen-terminated polycrystalline BDD SGFET and a platinum quasi-reference electrode, respectively.

  4. Participation of oxygen and carbon in formation of oxidation-induced stacking faults in monocrystalline silicon

    Directory of Open Access Journals (Sweden)

    Иван Федорович Червоный

    2015-11-01

    Full Text Available It is experimentally established, that density of oxidation-induced stacking faults (OISF in the boron doped monocrystalline silicon plates, that above, than it is more relation of oxygen atoms concentration to carbon atoms concentration in them.On research results of geometry of OISF rings in the different sections of single-crystal geometry of areas is reconstructed with their different closeness. At adjustment of the growing modes of single-crystals of silicon the increase of output of suitable product is observed

  5. Defect generation/passivation by low energy hydrogen implant for silicon solar cells

    International Nuclear Information System (INIS)

    Sopori, B.L.; Zhou, T.Q.; Rozgonyi, G.A.

    1990-01-01

    Low energy ion implant is shown to produce defects in silicon. These defects include surface damage, hydrogen agglomeration, formation of platelets with (111) habit plane and decoration of dislocations. Hydrogen also produces an inversion type of surface on boron doped silicon. These effects indicate that a preferred approach for passivation is to incorporate hydrogen from the back side of the cell. A backside H + implant technique is described. The results show that degree of passivation differs for various devices. A comparison of the defect structures of hydrogenated devices indicates that the structure and the distribution of defects in the bulk of the material plays a significant role in determining the degree of passivation

  6. Preliminary study on 2-dimensional distributions of 10B reaction rate in a water phantom with boron-doped CR-39 for 7Li(p, n)7Be neutrons by 1.95 MeV protons

    International Nuclear Information System (INIS)

    Hasegawa, Y.; Tanaka, K.; Tsuruta, T.

    2000-01-01

    In an Accelerator-based neutron irradiation field using 7 Li(p, n) 7 Be neutrons by 1.95 MeV protons, the distributions of 10 B reaction rates and thermal neutron fluence in a water phantom were measured using Boron-doped CR-39 and Au activation analysis, respectively. Comparing the results of the measurements, we discussed the validity of the evaluation method of 10 B reaction rate using thermal neutron fluence. (author)

  7. Indirect Voltammetric Sensing Platforms For Fluoride Detection on Boron-Doped Diamond Electrode Mediated via [FeF6]3− and [CeF6]2− Complexes Formation

    International Nuclear Information System (INIS)

    Culková, Eva; Tomčík, Peter; Švorc, Ľubomír; Cinková, Kristína; Chomisteková, Zuzana; Durdiak, Jaroslav; Rievaj, Miroslav; Bustin, Dušan

    2014-01-01

    Very simple and sensitive electroanalytical technique based on synergistic combination of reaction electrochemistry (specificity) and bare boron-doped diamond electrode (sensitivity) for the detection of fluorides in drinking water was developed as variant based on dynamic electrochemistry to ISE analysis. It is based on the formation of electroinactive fluoride complexes with Fe(III) and Ce(IV) ions decreasing such diffusion current of free metal on boron-doped diamond electrode. Due to low background signal of boron-doped diamond electrode reasonably low detection limits of the order of 10 −6 mol L −1 for linear sweep voltammetric method using formation of [FeF 6 ] 3− and 10 −7 mol L −1 in a square-wave variant of this technique have been achieved. This is approximately 1–2 orders lower than in the case of platinum comb-shaped interdigitated microelectrode array. Linear sweep voltammetric method based on [CeF 6 ] 2− complex formation has lower sensitivity and may be suitable for samples with higher content of fluoride and not to analysis of drinking water

  8. Structures of Pt clusters on graphene doped with nitrogen, boron, and silicon: a theoretical study

    Institute of Scientific and Technical Information of China (English)

    Dai Xian-Qi; Tang Ya-Nan; Dai Ya-Wei; Li Yan-Hui; Zhao Jian-Hua; Zhao Bao; Yang Zong-Xian

    2011-01-01

    The structures of Pt clusters on nitrogen-, boron-, silicon- doped graphenes are theoretically studied using densityfunctional theory. These dopants (nitrogen, boron and silicon) each do not induce a local curvature in the graphene and the doped graphenes all retain their planar form. The formation energy of the silicon-graphene system is lower than those of the nitrogen-, boron-doped graphenes, indicating that the silicon atom is easier to incorporate into the graphene.All the substitutional impurities enhance the interaction between the Pt atom and the graphene. The adsorption energy of a Pt adsorbed on the silicon-doped graphene is much higher than those on the nitrogen- and boron-doped graphenes.The doped silicon atom can provide more charges to enhance the Pt-graphene interaction and the formation of Pt clusters each with a large size. The stable structures of Pt clusters on the doped-graphenes are dimeric, triangle and tetrahedron with the increase of the Pt coverage. Of all the studied structures, the tetrahedron is the most stable cluster which has the least influence on the planar surface of doped-graphene.

  9. Facile Synthesis of Boron-doped Graphene Nanosheets with Hierarchical Microstructure at Atmosphere Pressure for Metal-free Electrochemical Detection of Hydrogen Peroxide

    International Nuclear Information System (INIS)

    Yeh, Min-Hsin; Li, Yan-Sheng; Chen, Guan-Lin; Lin, Lu-Yin; Li, Ta-Jen; Chuang, Hui-Min; Hsieh, Cheng-Yu; Lo, Shen-Chuan; Chiang, Wei-Hung; Ho, Kuo-Chuan

    2015-01-01

    Graphical abstract: Display Omitted -- Highlights: • B-doped graphene nanosheets (BGNs) were used as a catalyst for sensing H 2 O 2 . • BGNs were synthesized by an atmospheric-pressure carbothermal reaction. • BGNs with hierarchical microstructure provide more electron transport pathways. • B atoms act as the active sites by transferring charges to neighboring C atoms. • Electrocatalytic ability of BGNs was characterized by a rotating disk electrode. -- Abstract: Hydrogen peroxide (H 2 O 2 ) is an essential mediator for most of the oxidative biological reactions in enzyme-based biosensor systems, such as glucose oxidase, cholesterol oxidase, and alcohol oxidase. Synthesis of new catalysts to detect the concentration of H 2 O 2 more precisely is indispensable for enzyme-based electrochemical biosensors. In this study, boron-doped graphene nanosheets (BGNs) with 2.2 atomic percentage (at%) boron doping level and a hierarchical microstructure were synthesized by an atmospheric-pressure carbothermal reaction as a noble-metal free catalyst for sensing H 2 O 2 . The isolated boron atoms on the BGNs surface act as the electrocatalytic sites by transferring charges to neighbor carbon atoms, and the hierarchical microstructure provides multidimensional electron transport pathways for charge transfer and therefore enhances the electrocatalytic ability. BGNs possess a higher reduction current in the cyclic voltammetry (CV) measurement than that of pristine graphene nanosheets (GNs) over the detection range of 0.0 to 10.0 mM at −0.4 V (vs. Ag/AgCl). The BGNs modified electrochemical sensor shows a linear range from 1.0 to 20.0 mM of H 2 O 2 with a sensitivity of 266.7 ± 3.8 μA mM −1 cm −2 and limit of detection (LOD) of 3.8 μM at a signal-to-noise (S/N) ratio of 3. The beneficial hierarchical microstructure and the synergetic effects arising from doping boron in GNs accomplish the better performance of the BGNs modified electrochemical sensor

  10. Identification of photoluminescence P line in indium doped silicon as In{sub Si}-Si{sub i} defect

    Energy Technology Data Exchange (ETDEWEB)

    Lauer, Kevin, E-mail: klauer@cismst.de; Möller, Christian [CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt (Germany); Schulze, Dirk [TU Ilmenau, Institut für Physik, Weimarer Str. 32, 98693 Ilmenau (Germany); Ahrens, Carsten [Infineon Technologies AG, Am Campeon 1-12, 85579 Neubiberg (Germany)

    2015-01-15

    Indium and carbon co-implanted silicon was investigated by low-temperature photoluminescence spectroscopy. A photoluminescence peak in indium doped silicon (P line) was found to depend on the position of a silicon interstitial rich region, the existence of a SiN{sub x}:H/SiO{sub x} stack and on characteristic illumination and annealing steps. These results led to the conclusion that silicon interstitials are involved in the defect and that hydrogen impacts the defect responsible for the P line. By applying an unique illumination and annealing cycle we were able to link the P line defect with a defect responsible for degradation of charge carrier lifetime in indium as well as boron doped silicon. We deduced a defect model consisting of one acceptor and one silicon interstitial atom denoted by A{sub Si}-Si{sub i}, which is able to explain the experimental data of the P line as well as the light-induced degradation in indium and boron doped silicon. Using this model we identified the defect responsible for the P line as In{sub Si}-Si{sub i} in neutral charge state and C{sub 2v} configuration.

  11. Assessment of Boron Doped Diamond Electrode Quality and Application to In Situ Modification of Local pH by Water Electrolysis.

    Science.gov (United States)

    Read, Tania L; Macpherson, Julie V

    2016-01-06

    Boron doped diamond (BDD) electrodes have shown considerable promise as an electrode material where many of their reported properties such as extended solvent window, low background currents, corrosion resistance, etc., arise from the catalytically inert nature of the surface. However, if during the growth process, non-diamond-carbon (NDC) becomes incorporated into the electrode matrix, the electrochemical properties will change as the surface becomes more catalytically active. As such it is important that the electrochemist is aware of the quality and resulting key electrochemical properties of the BDD electrode prior to use. This paper describes a series of characterization steps, including Raman microscopy, capacitance, solvent window and redox electrochemistry, to ascertain whether the BDD electrode contains negligible NDC i.e. negligible sp(2) carbon. One application is highlighted which takes advantage of the catalytically inert and corrosion resistant nature of an NDC-free surface i.e. stable and quantifiable local proton and hydroxide production due to water electrolysis at a BDD electrode. An approach to measuring the local pH change induced by water electrolysis using iridium oxide coated BDD electrodes is also described in detail.

  12. Diazo dye Congo Red degradation using a Boron-doped diamond anode: An experimental study on the effect of supporting electrolytes.

    Science.gov (United States)

    Jalife-Jacobo, H; Feria-Reyes, R; Serrano-Torres, O; Gutiérrez-Granados, S; Peralta-Hernández, Juan M

    2016-12-05

    Diazo dye Congo Red (CR) solutions at 100mg/L, were degraded using different supporting electrolytes in an electrochemical advanced oxidation process (EAOPs), like the anodic oxidation (AOx/BDD). All experiments were carried out in a 3L flow reactor with a Boron-doped diamond (BDD) anode and stainless steel cathode (AISI 304), at 7.5, 15, 30 and 50mA/cm(2) current densities (j). Furthermore, each experiment was carried out under a flow rate of 7L/min. Additionally, HClO4, NaCl, Na2SO4, and H2SO4 were tested as supporting electrolytes at a 50mM concentration. The degradation process was at all times considerably faster in NaCl medium. Solutions containing SO4(2-) or ClO4(-) ions were less prompted to degradation due to the low oxidation power of these species into the bulk. Dissolved organic carbon (DOC) analysis, was carried out to evaluate the mineralization of CR. The degradation of CR, was evaluated with the HPLC analysis of the treated solutions. Copyright © 2016 Elsevier B.V. All rights reserved.

  13. Boron Doped diamond films as electron donors in photovoltaics: An X-ray absorption and hard X-ray photoemission study

    Energy Technology Data Exchange (ETDEWEB)

    Kapilashrami, M.; Zegkinoglou, I. [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Physics, University of Wisconsin Madison, Madison, Wisconsin 53706 (United States); Conti, G.; Nemšák, S.; Conlon, C. S.; Fadley, C. S. [Department of Physics, University of California, Davis, California 95616 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Törndahl, T.; Fjällström, V. [Ångström Solar Center, Uppsala University, Box 534, SE-751 21 Uppsala (Sweden); Lischner, J. [Department of Physics, University of California, Berkeley, California 94720 (United States); Louie, Steven G. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Physics, University of California, Berkeley, California 94720 (United States); Hamers, R. J.; Zhang, L. [Department of Chemistry, University of Wisconsin Madison, Madison, Wisconsin 53706 (United States); Guo, J.-H. [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Himpsel, F. J., E-mail: fhimpsel@wisc.edu [Department of Physics, University of Wisconsin Madison, Madison, Wisconsin 53706 (United States)

    2014-10-14

    Highly boron-doped diamond films are investigated for their potential as transparent electron donors in solar cells. Specifically, the valence band offset between a diamond film (as electron donor) and Cu(In,Ga)Se₂ (CIGS) as light absorber is determined by a combination of soft X-ray absorption spectroscopy and hard X-ray photoelectron spectroscopy, which is more depth-penetrating than standard soft X-ray photoelectron spectroscopy. In addition, a theoretical analysis of the valence band is performed, based on GW quasiparticle band calculations. The valence band offset is found to be small: VBO=VBM{sub CIGS} – VBM{sub diamond}=0.3 eV±0.1 eV at the CIGS/Diamond interface and 0.0 eV±0.1 eV from CIGS to bulk diamond. These results provide a promising starting point for optimizing the band offset by choosing absorber materials with a slightly lower valence band maximum.

  14. Voltammetric detection of antimony in natural water on cathodically pretreated microcrystalline boron doped diamond electrode: A possibility how to eliminate interference of arsenic without surface modification.

    Science.gov (United States)

    Lukáčová-Chomisteková, Zuzana; Culková, Eva; Bellová, Renata; Melicherčíková, Danica; Durdiak, Jaroslav; Beinrohr, Ernest; Rievaj, Miroslav; Tomčík, Peter

    2018-02-01

    Very simple and fast electroanalytical method for the detection Sb(III) on chemically unmodified boron-doped diamond electrode (BDDE) has been developed. Voltammetric behavior of antimony was investigated in various acidic supporting electrolytes and the most suitable medium for the determination of Sb(III) on bare BDDE has been 6molL -1 HClO 4 solution. The analytical performance was studied with differential pulse anodic stripping voltammetry (DPASV) with optimized conditions (deposition potential -1V vs. Ag/ AgCl and deposition time 240s). An analysis of possible effects due to the presence of other metal ions (especially As(III)) in the solution was eliminated using NaH 2 PO 4 as supporting electrolyte with addition EDTA as selective complexing agent for Sb(III). Speciation of antimony was also investigated. The detection limit of this analytical strategy achieved value of 1.08 × 10 -7 molL -1 . The proposed method was validated and applied for natural water from former antimony mines as real samples. Copyright © 2017 Elsevier B.V. All rights reserved.

  15. Enhancing the electrochemical oxidation of acid-yellow 36 azo dye using boron-doped diamond electrodes by addition of ferrous ion

    International Nuclear Information System (INIS)

    Villanueva-Rodriguez, M.; Hernandez-Ramirez, A.; Peralta-Hernandez, J.M.; Bandala, Erick R.; Quiroz-Alfaro, Marco A.

    2009-01-01

    This work shows preliminary results on the electrochemical oxidation process (EOP) using boron-doped diamond (BDD) electrode for acidic yellow 36 oxidation, a common azo dye used in textile industry. The study is centred in the synergetic effect of ferrous ions and hydroxyl free radicals for improving discoloration of azo dye. The assays were carried out in a typical glass cell under potentiostatic conditions. On experimental conditions, the EOP was able to partially remove the dye from the reaction mixture. The reaction rate increased significantly by addition of Fe 2+ (1 mM as ferrous sulphate) to the system and by (assumed) generation of ferrate ion [Fe(VI)] over BDD electrode. Ferrate is considered as a highly oxidizing reagent capable of removing the colorant from the reaction mixture, in synergistic action with the hydroxyl radicals produced on the BDD surface. Further increases in the Fe 2+ concentration lead to depletion of the reaction rate probably due to the hydroxyl radical scavenging effect of Fe 2+ excess in the system.

  16. Development of solar-driven electrochemical and photocatalytic water treatment system using a boron-doped diamond electrode and TiO2 photocatalyst.

    Science.gov (United States)

    Ochiai, Tsuyoshi; Nakata, Kazuya; Murakami, Taketoshi; Fujishima, Akira; Yao, Yanyan; Tryk, Donald A; Kubota, Yoshinobu

    2010-02-01

    A high-performance, environmentally friendly water treatment system was developed. The system consists mainly of an electrochemical and a photocatalytic oxidation unit, with a boron-doped diamond (BDD) electrode and TiO(2) photocatalyst, respectively. All electric power for the mechanical systems and the electrolysis was able to be provided by photovoltaic cells. Thus, this system is totally driven by solar energy. The treatment ability of the electrolysis and photocatalysis units was investigated by phenol degradation kinetics. An observed rate constant of 5.1 x 10(-3)dm(3)cm(-2)h(-1) was calculated by pseudo-first-order kinetic analysis for the electrolysis, and a Langmuir-Hinshelwood rate constant of 5.6 microM(-1)min(-1) was calculated by kinetic analysis of the photocatalysis. According to previous reports, these values are sufficient for the mineralization of phenol. In a treatment test of river water samples, large amounts of chemical and biological contaminants were totally wet-incinerated by the system. This system could provide 12L/day of drinking water from the Tama River using only solar energy. Therefore, this system may be useful for supplying drinking water during a disaster. (c) 2009 Elsevier Ltd. All rights reserved.

  17. Demonstration Of Electrochemical Oxidation Of Oils Using Boron-Doped Diamond Electrodes And Its Potential Role In The Disposal Of Radioactively Contaminated Waste Lubricants

    International Nuclear Information System (INIS)

    Taylor, G.T.; Newey, A.W.E.; Bates, C.J.; King, C.R.; Dawes, K.

    2009-01-01

    Electrochemical oxidation using a boron-doped diamond (BDD) anode is being investigated as a possible method for treating radiologically-contaminated oils. It has the potential to oxidise oils to carbon dioxide and water, and it would be particularly beneficial for oils contaminated with plutonium. It was found that simultaneous application of sonication and electro-oxidation produced and maintained an oil emulsion, so enabling its oxidation. This treatment was shown to be effective with 3 different oils: an unused hydraulic oil, an unused vacuum pump oil and a waste used machine tool oil, although the addition of a small amount of surfactant was required for the effective emulsification and oxidation of the vacuum pump oil. Essentially complete oxidation of the hydraulic oil in the absence of other organic material was demonstrated. The rate of oxidation appeared to be limited by the applied current when the concentration of oil was high and the current was low. Similarly, it was limited by the oil concentration when the concentration of oil was low and the current was relatively high. The required scale-up from a laboratory electrochemical cell is estimated to be 10,000 fold, which could entail a cell with a total BDD surface area of 3 m 2 , drawing a current of about 2000 A. It is anticipated that it should be possible to minimise the size of the cell by optimisation during the design of the prototype equipment. (authors)

  18. Photoassisted electrochemical recirculation system with boron-doped diamond anode and carbon nanotubes containing cathode for degradation of a model azo dye

    International Nuclear Information System (INIS)

    Vahid, Behrouz; Khataee, Alireza

    2013-01-01

    In this research work, a photoassisted electrochemical system under recirculation mode and with UV irradiation was designed for treatment of C.I. Acid Blue 92 (AB92) as a model anionic azo dye in aqueous solution. Degradation experiments were carried out with boron-doped diamond (BDD) anode and carbon nanotubes-polytetrafluoroethylene (CNTs-PTFE) cathode in the presence of sulfate as an electrolyte. A comparative study of AB92 degradation by photolysis, electrochemical oxidation and photoassisted electrochemical processes after 45 min of treatment demonstrated that degradation efficiency was 27.89, 37.65 and 95.86%, respectively. Experimental data revealed that the degradation rate of AB92 in all of the processes obeyed pseudo-first-order kinetics and application of photoassisted electrochemical system reduced electrical energy per order (E EO ), considerably. Degradation efficiency of photoassisted electrochemical process enhanced by increasing applied current and flow rate values, but vice versa trend was observed for initial dye concentration and an optimum amount of 6 was obtained for initial pH. The TOC measurement results demonstrated that 93.24% of organic substrates were mineralized after 120 min of photoassisted electrochemical process and GC–Mass analysis was performed for identification of degradation intermediates

  19. A Comparative Analysis of 2-(Thiocyanomethylthio-Benzothiazole Degradation Using Electro-Fenton and Anodic Oxidation on a Boron-Doped Diamond Electrode

    Directory of Open Access Journals (Sweden)

    Armando Vázquez

    2018-01-01

    Full Text Available 2-(Thiocyanomethylthio-benzothiazole (TCMTB is used as fungicide in the paper, tannery, paint, and coatings industries, and its study is important as it is considered toxic to aquatic life. In this study, a comparison of direct anodic oxidation (AO using a boron-doped diamond electrode (BDD and electro-Fenton (EF processes for TCMTB degradation in acidic chloride and sulfate media using a FM01-LC reactor was performed. The results of the electrolysis processes studied in the FM01-LC reactor showed a higher degradation of TCMTB with the anodic oxidation process than with the electro-Fenton process, reaching 81% degradation for the former process versus 47% degradation for the latter process. This difference was attributed to the decrease in H2O2 during the EF process, due to parallel oxidation of chlorides. The degradation rate and current efficiency increased as a function of volumetric flow rate, indicating that convection promotes anodic oxidation and electro-Fenton processes. The results showed that both AO and EF processes could be useful strategies for TCMTB toxicity reduction in wastewaters.

  20. Enhanced electrochemical response in oxidative differential pulse voltammetry of dopamine in the presence of ascorbic acid at carboxyl-terminated boron-doped diamond electrodes

    International Nuclear Information System (INIS)

    Kondo, Takeshi; Niwano, Yu; Tamura, Akira; Imai, Junichi; Honda, Kensuke; Einaga, Yasuaki; Tryk, Donald A.; Fujishima, Akira; Kawai, Takeshi

    2009-01-01

    The differential pulse voltammetric (DPV) peak for dopamine (DA) oxidation was found to be highly amplified by the addition of ascorbic acid (AA) when carboxyl-terminated boron-doped diamond (BDD) electrodes were used as the working electrode. The DP voltammogram for a solution containing DA and AA obtained using a 4-pentenoic acid-modified BDD (4PA-BDD) electrode showed well-separated oxidation peaks for DA and AA at 0.4 and 0.6 V vs. Ag/AgCl, respectively. In addition, as the DA concentration increased at constant AA concentration, a simultaneous increase in the DA peak current density and decrease in the AA peak current density were observed. The slope of the calibration curve for the [DA] range of 1-10 μM in the presence of AA (500 μM) was seven times larger than that obtained in the absence of AA. Such an enhancement was found to be more efficient at 4PA-BDD than at oxidized-BDD, partly due to simple electrostatic effects and partly due to suppression of the polymerization of DA oxidation products by the terminal carboxyl groups. The enhanced detection method using a carboxyl-terminated BDD electrode should be an effective analytical tool, especially for determining low concentrations of DA in the presence of high concentrations of AA

  1. Facile Synthesis of Boron-Doped rGO as Cathode Material for High Energy Li–O 2 Batteries

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Feng [Beijing Key Laboratory; amp, Engineering, Beijing Institute of Technology, Beijing 100081, PR China; Collaborative Innovation Center; Xing, Yi [Beijing Key Laboratory; amp, Engineering, Beijing Institute of Technology, Beijing 100081, PR China; Li, Li [Beijing Key Laboratory; amp, Engineering, Beijing Institute of Technology, Beijing 100081, PR China; Collaborative Innovation Center; Qian, Ji [Beijing Key Laboratory; amp, Engineering, Beijing Institute of Technology, Beijing 100081, PR China; Qu, Wenjie [Beijing Key Laboratory; amp, Engineering, Beijing Institute of Technology, Beijing 100081, PR China; Wen, Jianguo [Electron Microscopy; Miller, Dean [Electron Microscopy; Ye, Yusheng [Beijing Key Laboratory; amp, Engineering, Beijing Institute of Technology, Beijing 100081, PR China; Chen, Renjie [Beijing Key Laboratory; amp, Engineering, Beijing Institute of Technology, Beijing 100081, PR China; Collaborative Innovation Center; Amine, Khalil [Chemical Science and Engineering Division, Argonne; Lu, Jun [Chemical Science and Engineering Division, Argonne

    2016-08-29

    To improve the electrochemical performance of the high energy Li–O2 batteries, it is important to design and construct a suitable and effective oxygen-breathing cathode. Herein, a three-dimensional (3D) porous boron-doped reduction graphite oxide (B-rGO) material with a hierarchical structure has been prepared by a facile freeze-drying method. In this design, boric acid as the boron source helps to form the 3D porous structure, owing to its cross-linking and pore-forming function. This architecture facilitates the rapid oxygen diffusion and electrolyte penetration in the electrode. Meanwhile, the boron–oxygen functional groups linking to the carbon surface or edge serve as additional reaction sites to activate the ORR process. It is vital that boron atoms have been doped into the carbon lattices to greatly activate the electrons in the carbon π system, which is beneficial for fast charge under large current densities. Density functional theory calculation demonstrates that B-rGO exhibits much stronger interactions with Li5O6 clusters, so that B-rGO more effectively activates Li–O bonds to decompose Li2O2 during charge than rGO does. With B-rGO as a catalytic substrate, the Li–O2 battery achieves a high discharge capacity and excellent rate capability. Moreover, catalysts could be added into the B-rGO substrate to further lower the overpotential and enhance the cycling performance in future.

  2. Electrochemical treatment of phenolic waters in presence of chloride with boron-doped diamond (BDD) anodes: Experimental study and mathematical model

    International Nuclear Information System (INIS)

    Mascia, Michele; Vacca, Annalisa; Polcaro, Anna Maria; Palmas, Simonetta; Ruiz, Jesus Rodriguez; Da Pozzo, Anna

    2010-01-01

    This work deals with an experimental and numerical study on the electrochemical treatment of waters containing phenolic compounds with boron-doped diamond (BDD) anodes. Anodic oxidation of m-cresol, as a model of phenolic compound, was investigated by galvanostatic electrolyses. The electrolyses were carried out under different experimental conditions by using an impinging-jet flow cell inserted in a hydraulic circuit in a closed loop. On the basis of the experimental results a mathematical model was implemented to simulate the effect of the chemistry of organic compounds and solution on the process, in particular the effect of chlorides on the kinetics of m-cresol oxidation. The effect of hydrodynamics of the cell on the mass transfer towards the electrode surface was also considered. The model was validated through comparison with experimental data: the results showed that the proposed model well interpreted the complex effect on removal efficiency of such operative parameters as current density, hydrodynamic of the reactor and chemistry of the solution. The model predictions were utilised to obtain quantitative information on the reaction mechanism, as well as to predict the performance of the process under different operative conditions, by calculating some relevant figures of merit.

  3. Electrochemical determination of resveratrol in dietary supplements at a boron-doped diamond electrode in the presence of hexadecyltrimethylammonium bromide using square-wave adsorptive stripping voltammetry

    Directory of Open Access Journals (Sweden)

    Yardim Yavuz

    2017-01-01

    Full Text Available A sensitive electroanalytical methodology for the determination of resveratrol is presented for the first time using adsorptive stripping voltammetry at a bare boron-doped diamond (BDD electrode. In cyclic voltammetry, resveratrol shows one irreversible and an adsorption-controlled oxidation peak at a BDD electrode. The voltammetric results indicated that in the presence of hexadecyl trimethyl ammonium bromide, the BDD electrode remarkably enhanced the oxidation of resveratrol, which leads to an improvement in the peak current with a shift of the peak potential to more positive values. Using the square-wave stripping mode, the compound yielded a well-defined voltammetric response in 0.1 M nitric acid solution containing 100 μmol L-1 hexadecyl trimethyl ammonium bromide at 0.74 V (vs. Ag/AgCl, after 60 s accumulation at the open-circuit condition. A linear calibration graph was obtained in the concentration range 0.025 to 60.0 μg mL-1, with a detection limit of 0.0063 μg mL-1. The applicability of the proposed method was verified by analysis of resveratrol in commercial dietary supplements.

  4. Assessment of Boron Doped Diamond Electrode Quality and Application to In Situ Modification of Local pH by Water Electrolysis

    Science.gov (United States)

    Read, Tania L.; Macpherson, Julie V.

    2016-01-01

    Boron doped diamond (BDD) electrodes have shown considerable promise as an electrode material where many of their reported properties such as extended solvent window, low background currents, corrosion resistance, etc., arise from the catalytically inert nature of the surface. However, if during the growth process, non-diamond-carbon (NDC) becomes incorporated into the electrode matrix, the electrochemical properties will change as the surface becomes more catalytically active. As such it is important that the electrochemist is aware of the quality and resulting key electrochemical properties of the BDD electrode prior to use. This paper describes a series of characterization steps, including Raman microscopy, capacitance, solvent window and redox electrochemistry, to ascertain whether the BDD electrode contains negligible NDC i.e. negligible sp2 carbon. One application is highlighted which takes advantage of the catalytically inert and corrosion resistant nature of an NDC-free surface i.e. stable and quantifiable local proton and hydroxide production due to water electrolysis at a BDD electrode. An approach to measuring the local pH change induced by water electrolysis using iridium oxide coated BDD electrodes is also described in detail. PMID:26779959

  5. An Experimental Approach to Controllably Vary Protein Oxidation While Minimizing Electrode Adsorption for Boron-Doped Diamond Electrochemical Surface Mapping Applications

    Science.gov (United States)

    McClintock, Carlee S; Hettich, Robert L.

    2012-01-01

    Oxidative protein surface mapping has become a powerful approach for measuring the solvent accessibility of folded protein structures. A variety of techniques exist for generating the key reagent – hydroxyl radicals – for these measurements; however, these approaches range significantly in their complexity and expense of operation. This research expands upon earlier work to enhance the controllability of boron-doped diamond (BDD) electrochemistry as an easily accessible tool for producing hydroxyl radicals in order to oxidize a range of intact proteins. Efforts to modulate oxidation level while minimizing the adsorption of protein to the electrode involved the use of relatively high flow rates to reduce protein residence time inside the electrochemical flow chamber. Additionally, a different cell activation approach using variable voltage to supply a controlled current allowed us to precisely tune the extent of oxidation in a protein-dependent manner. In order to gain perspective on the level of protein adsorption onto the electrode surface, studies were conducted to monitor protein concentration during electrolysis and gauge changes in the electrode surface between cell activation events. This report demonstrates the successful use of BDD electrochemistry for greater precision in generating a target number of oxidation events upon intact proteins. PMID:23210708

  6. Boron Doped diamond films as electron donors in photovoltaics: An X-ray absorption and hard X-ray photoemission study

    International Nuclear Information System (INIS)

    Kapilashrami, M.; Zegkinoglou, I.; Conti, G.; Nemšák, S.; Conlon, C. S.; Fadley, C. S.; Törndahl, T.; Fjällström, V.; Lischner, J.; Louie, Steven G.; Hamers, R. J.; Zhang, L.; Guo, J.-H.; Himpsel, F. J.

    2014-01-01

    Highly boron-doped diamond films are investigated for their potential as transparent electron donors in solar cells. Specifically, the valence band offset between a diamond film (as electron donor) and Cu(In,Ga)Se 2 (CIGS) as light absorber is determined by a combination of soft X-ray absorption spectroscopy and hard X-ray photoelectron spectroscopy, which is more depth-penetrating than standard soft X-ray photoelectron spectroscopy. In addition, a theoretical analysis of the valence band is performed, based on GW quasiparticle band calculations. The valence band offset is found to be small: VBO = VBM CIGS – VBM diamond  = 0.3 eV ± 0.1 eV at the CIGS/Diamond interface and 0.0 eV ± 0.1 eV from CIGS to bulk diamond. These results provide a promising starting point for optimizing the band offset by choosing absorber materials with a slightly lower valence band maximum.

  7. Enhanced electrochemical response in oxidative differential pulse voltammetry of dopamine in the presence of ascorbic acid at carboxyl-terminated boron-doped diamond electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Kondo, Takeshi [Department of Industrial Chemistry, Faculty of Engineering, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601 (Japan)], E-mail: t.kondo@ci.kagu.tus.ac.jp; Niwano, Yu; Tamura, Akira; Imai, Junichi [Department of Industrial Chemistry, Faculty of Engineering, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601 (Japan); Honda, Kensuke [Department of Chemistry and Earth Sciences, Faculty of Science, Yamaguchi University, 1677-1 Yoshida, Yamaguchi-shi, Yamaguchi 753-8521 (Japan); Einaga, Yasuaki [Department of Chemistry, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Yokohama 223-0012 (Japan); Tryk, Donald A. [Fuel Cell Nanomaterials Center, University of Yamanashi, Takeda 4-3-11, Kofu, Yamanashi 400-8511 (Japan); Fujishima, Akira [Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu-ku, Kawasaki, Kanagawa 213-0012 (Japan); Kawai, Takeshi [Department of Industrial Chemistry, Faculty of Engineering, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601 (Japan)

    2009-03-01

    The differential pulse voltammetric (DPV) peak for dopamine (DA) oxidation was found to be highly amplified by the addition of ascorbic acid (AA) when carboxyl-terminated boron-doped diamond (BDD) electrodes were used as the working electrode. The DP voltammogram for a solution containing DA and AA obtained using a 4-pentenoic acid-modified BDD (4PA-BDD) electrode showed well-separated oxidation peaks for DA and AA at 0.4 and 0.6 V vs. Ag/AgCl, respectively. In addition, as the DA concentration increased at constant AA concentration, a simultaneous increase in the DA peak current density and decrease in the AA peak current density were observed. The slope of the calibration curve for the [DA] range of 1-10 {mu}M in the presence of AA (500 {mu}M) was seven times larger than that obtained in the absence of AA. Such an enhancement was found to be more efficient at 4PA-BDD than at oxidized-BDD, partly due to simple electrostatic effects and partly due to suppression of the polymerization of DA oxidation products by the terminal carboxyl groups. The enhanced detection method using a carboxyl-terminated BDD electrode should be an effective analytical tool, especially for determining low concentrations of DA in the presence of high concentrations of AA.

  8. On the role of salts for the treatment of wastewaters containing pharmaceuticals by electrochemical oxidation using a boron doped diamond anode

    International Nuclear Information System (INIS)

    Lan, Yandi; Coetsier, Clémence; Causserand, Christel; Groenen Serrano, Karine

    2017-01-01

    Refractory pharmaceuticals remain in biologically treated wastewater and are continuously discharged into aquatic systems due to their limited biodegradability. Electrochemical oxidation is promising for the treatment of such refractory compounds, in particular using a boron doped diamond (BDD) anode. This study investigates the role of salts, such as sulfates and chlorides in the electrochemical treatment of wastewater. The presence of sulfates accelerated the removal of ciprofloxacin and sulfamethoxazole, but had no effect on the oxidation of salbutamol. This comparison highlights the selectivity of the reaction between organics and sulfate radicals. The addition of chlorides into the solution led to a remarkably-faster degradation of ciprofloxacin. However, incomplete mineralization was observed at high current densities due to the significant formation of halogenated organic compounds (AOX). The formation of refractory and toxic compounds such as ClO_4"− and AOX can be limited under the control of (i) applied current intensity and (ii) duration of electrolysis. Electrochemical oxidation of concentrated biologically-treated hospital wastewater investigated the excellent removal of biorefractory pharmaceuticals and confirmed the acceleration effect of salts on pharmaceutical degradation.

  9. The improvement of boron-doped diamond anode system in electrochemical degradation of p-nitrophenol by zero-valent iron

    International Nuclear Information System (INIS)

    Zhu Xiuping; Ni Jinren

    2011-01-01

    Boron-doped diamond (BDD) electrodes are promising anode materials in electrochemical treatment of wastewaters containing bio-refractory organic compounds due to their strong oxidation capability and remarkable corrosion stability. In order to further improve the performance of BDD anode system, electrochemical degradation of p-nitrophenol were initially investigated at the BDD anode in the presence of zero-valent iron (ZVI). The results showed that under acidic condition, the performance of BDD anode system containing zero-valent iron (BDD-ZVI system) could be improved with the joint actions of electrochemical oxidation at the BDD anode (39.1%), Fenton's reaction (28.5%), oxidation–reduction at zero-valent iron (17.8%) and coagulation of iron hydroxides (14.6%). Moreover, it was found that under alkaline condition the performance of BDD-ZVI system was significantly enhanced, mainly due to the accelerated release of Fe(II) ions from ZVI and the enhanced oxidation of Fe(II) ions. The dissolved oxygen concentration was significantly reduced by reduction at the cathode, and consequently zero-valent iron corroded to Fe(II) ions in anaerobic highly alkaline environments. Furthermore, the oxidation of released Fe(II) ions to Fe(III) ions and high-valent iron species (e.g., FeO 2+ , FeO 4 2− ) was enhanced by direct electrochemical oxidation at BDD anode.

  10. Investigation of the synergistic effects for p-nitrophenol mineralization by a combined process of ozonation and electrolysis using a boron-doped diamond anode

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, Cuicui [School of Environment, State Key Joint Laboratory of Environmental Simulation and Pollution Control, Tsinghua University, Beijing 100084 (China); Yuan, Shi [School of Environment, State Key Joint Laboratory of Environmental Simulation and Pollution Control, Tsinghua University, Beijing 100084 (China); Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055 (China); Li, Xiang; Wang, Huijiao; Bakheet, Belal [School of Environment, State Key Joint Laboratory of Environmental Simulation and Pollution Control, Tsinghua University, Beijing 100084 (China); Komarneni, Sridhar [Department of Ecosystem Science and Management and Material Research Institute, 205 MRL Building, The Pennsylvania State University, University Park, PA 16802 (United States); Wang, Yujue, E-mail: wangyujue@tsinghua.edu.cn [School of Environment, State Key Joint Laboratory of Environmental Simulation and Pollution Control, Tsinghua University, Beijing 100084 (China); Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055 (China)

    2014-09-15

    Graphical abstract: - Highlights: • Combining electrolysis with ozonation greatly enhances nitrophenol mineralization. • O{sub 3} can rapidly degrade nitrophenol to carboxylic acids in the bulk solution. • Carboxylic acids can be mineralized by ·OH generated from multiple sources in the electrolysis-O{sub 3} process. • Electrolysis and ozonation can compensate for each other's weakness on pollutant degradation. - Abstract: Electrolysis and ozonation are two commonly used technologies for treating wastewaters contaminated with nitrophenol pollutants. However, they are often handicapped by their slow kinetics and low yields of total organic carbon (TOC) mineralization. To improve TOC mineralization efficiency, we combined electrolysis using a boron-doped diamond (BDD) anode with ozonation (electrolysis-O{sub 3}) to treat a p-nitrophenol (PNP) aqueous solution. Up to 91% TOC was removed after 60 min of the electrolysis-O{sub 3} process. In comparison, only 20 and 44% TOC was respectively removed by individual electrolysis and ozonation treatment conducted under similar reaction conditions. The result indicates that when electrolysis and ozonation are applied simultaneously, they have a significant synergy for PNP mineralization. This synergy can be mainly attributed to (i) the rapid degradation of PNP to carboxylic acids (e.g., oxalic acid and acetic acid) by O{sub 3}, which would otherwise take a much longer time by electrolysis alone, and (ii) the effective mineralization of the ozone-refractory carboxylic acids to CO{sub 2} by ·OH generated from multiple sources in the electrolysis-O{sub 3} system. The result suggests that combining electrolysis with ozonation can provide a simple and effective way to mutually compensate the limitations of the two processes for degradation of phenolic pollutants.

  11. A novel paper-based device coupled with a silver nanoparticle-modified boron-doped diamond electrode for cholesterol detection

    Energy Technology Data Exchange (ETDEWEB)

    Nantaphol, Siriwan [Electrochemistry and Optical Spectroscopy Research Unit, Department of Chemistry, Faculty of Science, Chulalongkorn University, 254 Phayathai Road, Pathumwan, Bangkok 10330 (Thailand); Chailapakul, Orawon, E-mail: corawon@chula.ac.th [Electrochemistry and Optical Spectroscopy Research Unit, Department of Chemistry, Faculty of Science, Chulalongkorn University, 254 Phayathai Road, Pathumwan, Bangkok 10330 (Thailand); Center for Petroleum, Petrochemicals and Advanced Materials, Chulalongkorn University, 254 Phayathai Road, Pathumwan, Bangkok 10330 (Thailand); Siangproh, Weena, E-mail: weenasi@hotmail.com [Department of Chemistry, Faculty of Science, Srinakharinwirot University, Sukhumvit 23, Wattanna, Bangkok 10110 (Thailand)

    2015-09-03

    A novel paper-based analytical device (PAD) coupled with a silver nanoparticle-modified boron-doped diamond (AgNP/BDD) electrode was first developed as a cholesterol sensor. The AgNP/BDD electrode was used as working electrode after modification by AgNPs using an electrodeposition method. Wax printing was used to define the hydrophilic and hydrophobic areas on filter paper, and then counter and reference electrodes were fabricated on the hydrophilic area by screen-printing in house. For the amperometric detection, cholesterol and cholesterol oxidase (ChOx) were directly drop-cast onto the hydrophilic area, and H{sub 2}O{sub 2} produced from the enzymatic reaction was monitored. The fabricated device demonstrated a good linearity (0.39 mg dL{sup −1} to 270.69 mg dL{sup −1}), low detection limit (0.25 mg dL{sup −1}), and high sensitivity (49.61 μA mM{sup −1} cm{sup −2}). The precision value for ten replicates was 3.76% RSD for 1 mM H{sub 2}O{sub 2}. In addition, this biosensor exhibited very high selectivity for cholesterol detection and excellent recoveries for bovine serum analysis (in the range of 99.6–100.8%). The results showed that this new sensing platform will be an alternative tool for cholesterol detection in routine diagnosis and offers the advantages of low sample/reagent consumption, low cost, portability, and short analysis time. - Highlights: • Novel PAD coupled with AgNP/BDDE for cholesterol determination was developed. • Wide linear range, low detection limit and high selectivity were achieved. • This sensor was successfully applied for cholesterol determination in bovine serum. • This platform offers the advantages of low sample/reagent consumption and low cost.

  12. Electrical and photocatalytic properties of boron-doped ZnO nanostructure grown on PET-ITO flexible substrates by hydrothermal method

    Science.gov (United States)

    Wang, Wei; Ai, Taotao; Yu, Qi

    2017-02-01

    Boron-doped zinc oxide sheet-spheres were synthesized on PET-ITO flexible substrates using a hydrothermal method at 90 °C for 5 h. The results of X-ray diffraction and X-ray photoelectron spectroscopy indicated that the B atoms were successfully doped into the ZnO lattice, the incorporation of B led to an increase in the lattice constant of ZnO and a change in its internal stress. The growth mechanism of pure ZnO nanorods and B-doped ZnO sheet-spheres was specifically investigated. The as-prepared BZO/PET-ITO heterojunction possessed obvious rectification properties and its positive turn-on voltage was 0.4 V. The carrier transport mechanisms involved three models such as hot carrier tunneling theory, tunneling recombination, and series-resistance effect were explored. The BZO/PET-ITO nanostructures were more effective than pure ZnO to degrade the RY 15, and the degradation rate reached 41.45%. The decomposition process with BZO nanostructure followed first-order reaction kinetics. The photocurrent and electrochemical impedance spectroscopy revealed that the B-doping could promote the separation of photo-generated electron-hole pairs, which was beneficial to enhance the photocatalytic activity. The photocurrent density of B-doped and pure ZnO/PET-ITO were 0.055 mA/cm2 and 0.016 mA/cm2, respectively. The photocatalytic mechanism of the sample was analyzed by the energy band theory.

  13. Degradation of 4,6-dinitro-o-cresol from water by anodic oxidation with a boron-doped diamond electrode

    International Nuclear Information System (INIS)

    Flox, Cristina; Garrido, Jose Antonio; Rodriguez, Rosa Maria; Centellas, Francesc; Cabot, Pere-Lluis; Arias, Conchita; Brillas, Enric

    2005-01-01

    Anodic oxidation of 4,6-dinitro-o-cresol (DNOC) has been studied in a cell of 100 ml with a boron-doped diamond anode and a graphite cathode, both of 3-cm 2 area. Solutions containing up to approximately 240 mg l -1 of compound in the pH range 2.0-12.0 have been treated at 100, 300 and 450 mA between 15 and 50 deg C. Total mineralization is always achieved due to the great amount of hydroxyl radical (·OH) produced as oxidant on the anode surface. Total organic carbon is more rapidly removed in acid medium, being the optimum pH 3.0. The degradation rate increases when temperature, current and DNOC concentration increase. However, at 100 mA depollution becomes more effective from 71 mg l -1 of initial pollutant. A pseudo first-order kinetics for DNOC decay is always found by reversed-phase chromatography, with a rate constant practically independent of pH, as expected if the same electroactive species is oxidized in all media. Ion-exclusion chromatography allowed the detection of oxalic acid as the ultimate carboxylic acid. The mineralization process leads to the complete release of NO 3 - ions from the destruction of nitroderivative intermediates. These products are oxidized simultaneously with accumulated oxalic acid up to the end of electrolyses. Comparative treatment of the same solutions with a Pt anode yields a quite poor depollution because of the generation of much lower amounts of reactive ·OH on its surface

  14. Controlled sp(2) Functionalization of Boron Doped Diamond as a Route for the Fabrication of Robust and Nernstian pH Electrodes.

    Science.gov (United States)

    Ayres, Zoë J; Borrill, Alexandra J; Newland, Jonathan C; Newton, Mark E; Macpherson, Julie V

    2016-01-05

    The development of a voltammetric boron doped diamond (BDD) pH sensor is described. To obtain pH sensitivity, laser micromachining (ablation) is utilized to introduce controlled regions of sp(2) carbon into a high quality polycrystalline BDD electrode. The resulting sp(2) carbon is activated to produce electrochemically reducible quinone groups using a high temperature acid treatment, followed by anodic polarization. Once activated, no further treatment is required. The quinone groups show a linear (R(2) = 0.999) and Nernstian (59 mV/(pH unit)) pH-dependent reductive current-voltage response over a large analyzable pH range, from pH 2 to pH 12. Using the laser approach, it is possible to optimize sp(2) coverage on the BDD surface, such that a measurable pH response is recorded, while minimizing background currents arising from oxygen reduction reactions on sp(2) carbon in the potential region of interest. This enables the sensor to be used in aerated solutions, boding well for in situ analysis. The voltammetric response of the electrode is not compromised by the presence of excess metal ions such as Pb(2+), Cd(2+), Cu(2+), and Zn(2+). Furthermore, the pH sensor is stable over a 3 month period (the current time period of testing), can be stored in air between measurements, requires no reactivation of the surface between measurements, and can be reproducibly fabricated using the proposed approach. The efficacy of this pH sensor in a real-world sample is demonstrated with pH measurements in U.K. seawater.

  15. Degradation of the beta-blocker propranolol by electrochemical advanced oxidation processes based on Fenton's reaction chemistry using a boron-doped diamond anode

    Energy Technology Data Exchange (ETDEWEB)

    Isarain-Chavez, Eloy; Rodriguez, Rosa Maria; Garrido, Jose Antonio; Arias, Conchita; Centellas, Francesc; Cabot, Pere Lluis [Laboratori d' Electroquimica dels Materials i del Medi Ambient, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain); Brillas, Enric, E-mail: brillas@ub.ed [Laboratori d' Electroquimica dels Materials i del Medi Ambient, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain)

    2010-12-15

    The electro-Fenton (EF) and photoelectro-Fenton (PEF) degradation of solutions of the beta-blocker propranolol hydrochloride with 0.5 mmol dm{sup -3} Fe{sup 2+} at pH 3.0 has been studied using a single cell with a boron-doped diamond (BDD) anode and an air diffusion cathode (ADE) for H{sub 2}O{sub 2} electrogeneration and a combined cell containing the above BDD/ADE pair coupled in parallel to a Pt/carbon felt (CF) cell. This naphthalene derivative can be mineralized by both methods with a BDD anode. Almost overall mineralization is attained for the PEF treatments, more rapidly with the combined system due to the generation of higher amounts of hydroxyl radical from Fenton's reaction by the continuous Fe{sup 2+} regeneration at the CF cathode, accelerating the oxidation of organics to Fe(III)-carboxylate complexes that are more quickly photolyzed by UVA light. The homologous EF processes are less potent giving partial mineralization. The effect of current density, pH and Fe{sup 2+} and drug concentrations on the oxidation power of PEF process in combined cell is examined. Propranolol decay follows a pseudo first-order reaction in most cases. Aromatic intermediates such as 1-naphthol and phthalic acid and generated carboxylic acids such as maleic, formic, oxalic and oxamic are detected and quantified by high-performance liquid chromatography. The chloride ions present in the starting solution are slowly oxidized at the BDD anode. In PEF treatments, all initial N of propranolol is completely transformed into inorganic ions, with predominance of NH{sub 4}{sup +} over NO{sub 3}{sup -} ion.

  16. Preparation of TiO2/boron-doped diamond/Ta multilayer films and use as electrode materials for supercapacitors

    Science.gov (United States)

    Shi, Chao; Li, Hongji; Li, Cuiping; Li, Mingji; Qu, Changqing; Yang, Baohe

    2015-12-01

    We report nanostructured TiO2/boron-doped diamond (BDD)/Ta multilayer films and their electrochemical performances as supercapacitor electrodes. The BDD films were grown on Ta substrates using electron-assisted hot filament chemical vapor deposition. Ti metal layers were deposited on the BDD surfaces by radio frequency magnetron sputtering, and nanostructured TiO2/BDD/Ta thin films were prepared by electrochemical etching and thermal annealing. The successful formation of TiO2 and Ta layered nanostructures was demonstrated using scanning electron and transmission electron microscopies. The electrochemical responses of these electrodes were evaluated by examining their use as electrical double-layer capacitors, using cyclic voltammetry, and galvanostatic charge/discharge and impedance measurements. When the TiO2/BDD/Ta film was used as the working electrode with 0.1 M Na2SO4 as the electrolyte, the capacitor had a specific capacitance of 5.23 mF cm-2 at a scan rate of 5 mV s-1 for a B/C ratio of 0.1% w/w. Furthermore, the TiO2/BDD/Ta film had improved electrochemical stability, with a retention of 89.3% after 500 cycles. This electrochemical behavior is attributed to the quality of the BDD, the surface roughness and electrocatalytic activities of the TiO2 layer and Ta nanoporous structures, and the synergies between them. These results show that TiO2/BDD/Ta films are promising as capacitor electrodes for special applications.

  17. Degradation of amaranth dye in alkaline medium by ultrasonic cavitation coupled with electrochemical oxidation using a boron-doped diamond anode

    International Nuclear Information System (INIS)

    Barros, Willyam R.P.; Steter, Juliana R.; Lanza, Marcos R.V.; Motheo, Artur J.

    2014-01-01

    Amaranth dye is used widely in the processing of paper, textiles, foods, cosmetics, beverages and medicines, and effluents contaminated with this compound are discharged daily into the environment. Recent studies have shown that azo dyes, especially those such as amaranth dye that have been classified as endocrine disruptors, may cause adverse effects to animal and human health. This paper describes the application of electrochemical oxidation (with a boron-doped diamond BDD thin-film anode) coupled with ultrasound sonolysis (20 kHz and 523 W cm −2 ) to the removal of amaranth dye from dilute alkaline solution. The electrochemical and sonoelectrochemical processes (ECh and SECh, respectively) were carried out at constant current density (10 to 50 mA cm −2 ) in a single compartment cylindrical cell. Sonolysis was virtually less useful for the decolorization and degradation of amaranth dye, whilst ECh and SECh were more effective in degrading the dye with almost complete removal (90 - 95%) attained after 90 min of experiment at an applied current density of 50 mA cm −2 . Degradation of the dye followed pseudo first-order kinetics in both processes, but the rate of reaction was faster with the SECh treatment confirming a synergistic effect between the cavitation process and the electrochemical system. Additionally, at low applied current densities (10 and 25 mA cm −2 ), SECh was considerably more effective than ECh for the amaranth dye mineralization. Although at 35 and 50 mA cm −2 , the two processes showed the respective removal of total organic carbon values: (i) 85% for the ECh and 90% for the SECh at 35 mA cm −2 ; (ii) 96% for the ECh and 98% for the SECh at 50 mA cm −2 . It is concluded that SECh presented the most favorable results for the decontamination of wastewaters containing azo dye compounds

  18. A novel paper-based device coupled with a silver nanoparticle-modified boron-doped diamond electrode for cholesterol detection

    International Nuclear Information System (INIS)

    Nantaphol, Siriwan; Chailapakul, Orawon; Siangproh, Weena

    2015-01-01

    A novel paper-based analytical device (PAD) coupled with a silver nanoparticle-modified boron-doped diamond (AgNP/BDD) electrode was first developed as a cholesterol sensor. The AgNP/BDD electrode was used as working electrode after modification by AgNPs using an electrodeposition method. Wax printing was used to define the hydrophilic and hydrophobic areas on filter paper, and then counter and reference electrodes were fabricated on the hydrophilic area by screen-printing in house. For the amperometric detection, cholesterol and cholesterol oxidase (ChOx) were directly drop-cast onto the hydrophilic area, and H 2 O 2 produced from the enzymatic reaction was monitored. The fabricated device demonstrated a good linearity (0.39 mg dL −1 to 270.69 mg dL −1 ), low detection limit (0.25 mg dL −1 ), and high sensitivity (49.61 μA mM −1  cm −2 ). The precision value for ten replicates was 3.76% RSD for 1 mM H 2 O 2 . In addition, this biosensor exhibited very high selectivity for cholesterol detection and excellent recoveries for bovine serum analysis (in the range of 99.6–100.8%). The results showed that this new sensing platform will be an alternative tool for cholesterol detection in routine diagnosis and offers the advantages of low sample/reagent consumption, low cost, portability, and short analysis time. - Highlights: • Novel PAD coupled with AgNP/BDDE for cholesterol determination was developed. • Wide linear range, low detection limit and high selectivity were achieved. • This sensor was successfully applied for cholesterol determination in bovine serum. • This platform offers the advantages of low sample/reagent consumption and low cost.

  19. Electrochemical degradation of the herbicide picloram using a filter-press flow reactor with a boron-doped diamond or β-PbO2 anode

    International Nuclear Information System (INIS)

    Pereira, Gabriel F.; Rocha-Filho, Romeu C.; Bocchi, Nerilso; Biaggio, Sonia R.

    2015-01-01

    Galvanostatic electrolyses are performed in a filter-press reactor to investigate the electrochemical degradation of picloram (100 mg L −1 , from a commercial herbicide formulation) using a boron-doped diamond (BDD) or β-PbO 2 anode. The effect of pH (3, 6, or 10), applied current density (j apl = 10, 30, or 50 mA cm −2 ), and absence or presence of Cl – ions (25 mM) in the supporting electrolyte (aqueous 0.10 M Na 2 SO 4 ) is investigated, while the picloram concentration, solution chemical oxygen demand (COD) and total organic carbon content (TOC), and energy consumption are monitored as a function of electrolysis time. From the obtained results, it is clear that the electrochemical degradation of picloram is possible using either of the anodes, but with different overall performances. In general, the presence of Cl – ions in the supporting electrolyte (leading to electrogenerated active chlorine) has a positive effect on the performance of both anodes, except for TOC abatement using the BDD anode; the best electrodegradation performances are attained at pH values around 6, when HClO is the predominant active-chlorine species. Faster rates of initial electrodegradation of picloram and of solution TOC abatement are obtained as j apl is increased, but, as expected, lower energy consumptions are always attained at the lowest value of j apl . The performances of the two anodes are virtually the same in the initial degradation of picloram; however, the BDD anode greatly surpasses the β-PbO 2 anode in the abatement of solution COD or TOC. This confirms the importance of the oxidation power of the anode, even when indirect oxidation by active chlorine plays a concomitant role.

  20. Diclofenac on boron-doped diamond electrode: from electroanalytical determination to prediction of the electrooxidation mechanism with HPLC-ESI/HRMS and computational simulations.

    Science.gov (United States)

    Lucas, Francisco Willian de S; Mascaro, Lucia H; Fill, Taicia P; Rodrigues-Filho, Edson; Franco-Junior, Edison; Homem-de-Mello, Paula; de Lima-Neto, Pedro; Correia, Adriana N

    2014-05-20

    Using square-wave voltammetry coupled to the boron-doped diamond electrode (BDDE), it was possible to develop an analytical methodology for identification and quantification of diclofenac (DCL) in tablets and synthetic urine. The electroanalytical procedure was validated, with results being statistically equal to those obtained by chromatographic standard method, showing linear range of 4.94 × 10(-7) to 4.43 × 10(-6) mol L(-1), detection limit of 1.15 × 10(-7) mol L(-1), quantification limit of 3.85 × 10(-7) mol L(-1), repeatability of 3.05% (n = 10), and reproducibility of 1.27% (n = 5). The association of electrochemical techniques with UV-vis spectroscopy, computational simulations and HPLC-ESI/HRMS led us to conclude that the electrooxidation of DCL on the BDDE involved two electrons and two protons, where the products are colorful and easily hydrolyzable dimers. Density functional theory calculations allowed to evaluate the stability of dimers A, B, and C, suggesting dimer C was more stable than the other two proposed structures, ca. 4 kcal mol(-1). The comparison of the dimers stabilities with the stabilities of the molecular ions observed in the MS, the compounds that showed retention time (RT) of 15.53, 21.44, and 22.39 min were identified as the dimers B, C, and A, respectively. Corroborating the observed chromatographic profile, dimer B had a dipole moment almost twice higher than that of dimers A and C. As expected, dimer B has really shorter RT than dimers A and C. The majority dimer was the A (71%) and the C (19.8%) should be the minority dimer. However, the minority was the dimer B, which was formed in the proportion of 9.2%. This inversion between the formation proportion of dimer B and dimer C can be explained by preferential conformation of the intermediaries (cation-radicals) on the surface.

  1. Amorphous boron-doped sodium titanates hydrates: Efficient and reusable adsorbents for the removal of Pb{sup 2+} from water

    Energy Technology Data Exchange (ETDEWEB)

    Di Bitonto, Luigi; Volpe, Angela; Pagano, Michele; Bagnuolo, Giuseppe; Mascolo, Giuseppe [CNR-IRSA, Via de Blasio 5, 70132 Bari (Italy); La Parola, Valeria [CNR-ISMN, Via U. La Malfa, 153, 90146 Palermo (Italy); Di Leo, Paola [CNR-IMAA, Via S. Loja, Tito Scalo (PZ) (Italy); Pastore, Carlo, E-mail: carlo.pastore@ba.irsa.cnr.it [CNR-IRSA, Via de Blasio 5, 70132 Bari (Italy)

    2017-02-15

    Highlights: • Amorphous B-doped sodium titanates hydrates were mildly synthesized. • These compounds resulted efficiently used in removing Pb{sup 2+} from natural water. • Adsorption occurs with a partial ionic exchange mechanism. • Adsorbents were easily recoverable and reusable for further new cycles. - Abstract: Amorphous titanium hydroxide and boron-doped (B-doped) sodium titanates hydrates were synthetized and used as adsorbents for the removal of Pb{sup 2+} from water. The use of sodium borohydride (NaBH{sub 4}) and titanium(IV) isopropoxide (TTIP) as precursors permits a very easy synthesis of B-doped adsorbents at 298 K. The new adsorbent materials were first chemically characterized (XRD, XPS, SEM, DRIFT and elemental analysis) and then tested in Pb{sup 2+} adsorption batch experiments, in order to define kinetics and equilibrium studies. The nature of interaction between such sorbent materials and Pb{sup 2+} was also well defined: besides a pure adsorption due to hydroxyl interaction functionalities, there is also an ionic exchange between Pb{sup 2+} and sodium ions even working at pH 4.4. Langmuir model presented the best fitting with a maximum adsorption capacity up to 385 mg/g. The effect of solution pH and common ions (i.e. Na{sup +}, Ca{sup 2+} and Mg{sup 2+}) onto Pb{sup 2+} sorption were also investigated. Finally, recovery was positively conducted using EDTA. Very efficient adsorption (>99.9%) was verified even using tap water spiked with traces of Pb{sup 2+} (50 ppb).

  2. Voltammetric detection of the interactions between RNO2?- and electron acceptors in aqueous medium at highly boron doped diamond electrode (HBDDE)

    International Nuclear Information System (INIS)

    Juliao, Murilo S. da S.; Ferreira, Elizabeth I.; Ferreira, Neidenei G.; Serrano, Silvia H.P.

    2006-01-01

    This paper describes the electrochemical behavior of the nitrofurazone (NFZ), in predominantly aqueous medium, in the absence and presence of glutathione (reduced form) (GSH), l-cysteine (Cys) and O 2 using a highly boron doped diamond electrode (HBDDE). In presence of [Thiol]>=3.7x10 -2 molL -1 NFZ is directly reduced to RNO-Thiol adducts in an electrochemical process involving two electrons and two protons. On the other side, O 2 acts as a RNO 2 *- scavenger and the velocity constant for the reaction, k O 2 , is 60Lmol -1 s -1 . The process is catalytic and can be used to the analytical determination of NFZ in the range of 9.9x10 -7 -bar [NFZ]-bar 1.1x10 -5 molL -1 at pH 8.0, with sensitivity of 2.2x10 6 μAmol -1 cm -2 and detection limit of 3.4x10 -7 molL -1 . The analytical parameters were similar to those obtained at pH 4.0 using the direct reduction of NFZ to the respective amine derivative in a process involving six electrons and six protons. The characterization of NFZ global reduction process in aqueous medium and at relative low scan rate, 100mVs -1 , was only possible due the intrinsic superficial characteristics of the HBDDE, which stabilize the RNO 2 ? - free radical, allowing to work in a large potential window, without losing the RNO 2 ? - oxidation signal

  3. Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon

    Energy Technology Data Exchange (ETDEWEB)

    Zhukavin, R. Kh., E-mail: zhur@ipmras.ru; Kovalevsky, K. A.; Orlov, M. L.; Tsyplenkov, V. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Hübers, H.-W. [DLR Institute of Optical Sensor Systems (Germany); Dessmann, N. [Humboldt University of Berlin, Institute of Physics (Germany); Kozlov, D. V.; Shastin, V. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2016-11-15

    Experimental data on the spontaneous emission and absorption modulation in boron-doped silicon under CO{sub 2} laser excitation depending on the uniaxial stress applied along the [001] and [011] crystallographic directions are presented. Room-temperature radiation is used as the probe radiation. Low stress (less than 0.5 kbar) is shown to reduce losses in the terahertz region by 20%. The main contribution to absorption modulation at zero and low stress is made by A{sup +} centers. Intersubband free hole transitions additionally contribute to terahertz absorption at higher stress. These contributions can be minimized by compensation.

  4. High-rate and ultralong cycle-life LiFePO{sub 4} nanocrystals coated by boron-doped carbon as positive electrode for lithium-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Jinpeng, E-mail: goldminer@sina.com; Wang, Youlan

    2016-12-30

    Highlights: • B-doped carbon decorated LiFePO{sub 4} has been fabricated for the first time. • The LiFePO{sub 4}@B-CdisplaysimprovedbatteryperformancecomparedtoLiFePO{sub 4}@C. • The LiFePO{sub 4}@B-C is good candidate for high-performance lithium-ion batteries. - Abstract: An evolutionary modification approach, boron-doped carbon coating, has been used to improve the electrochemical performances of positive electrodes for lithium-ion batteries, and demonstrates apparent and significant modification effects. In this study, the boron-doped carbon coating is firstly adopted and used to decorate the performance of LiFePO{sub 4}. The obtained composite exhibits a unique core-shell structure with an average diameter of 140 nm and a 4 nm thick boron-doped carbon shell that uniformly encapsulates the core. Owing to the boron element which could induce high amount of defects in the carbon, the electronic conductivity of LiFePO{sub 4} is greatly ameliorated. Thus, the boron-doped composite shows superior rate capability and cycle stability than the undoped sample. For instance, the reversible specific capacity of LiFePO{sub 4}@B{sub 0.4}-C can reach 164.1 mAh g{sup −1} at 0.1C, which is approximately 96.5% of the theoretical capacity (170 mAh g{sup −1}). Even at high rate of 10C, it still shows a high specific capacity of 126.8 mAh g{sup −1} and can be maintained at 124.5 mAh g{sup −1} after 100 cycles with capacity retention ratio of about 98.2%. This outstanding Li-storage property enable the present design strategy to open up the possibility of fabricating the LiFePO{sub 4}@B-C composite for high-performance lithium-ion batteries.

  5. Reduced annealing temperatures in silicon solar cells

    Science.gov (United States)

    Weinberg, I.; Swartz, C. K.

    1981-01-01

    Cells irradiated to a fluence of 5x10,000,000,000,000/square cm showed short circuit current on annealing at 200 C, with complete annealing occurring at 275 C. Cells irradiated to 100,000,000,000,000/square cm showed a reduction in annealing temperature from the usual 500 to 300 C. Annealing kinetic studies yield an activation energy of (1.5 + or - 2) eV for the low fluence, low temperature anneal. Comparison with activation energies previously obtained indicate that the presently obtained activation energy is consistent with the presence of either the divacancy or the carbon interstitial carbon substitutional pair, a result which agrees with the conclusion based on defect behavior in boron-doped silicon.

  6. Electronic properties and gas adsorption behaviour of pristine, silicon-, and boron-doped (8, 0) single-walled carbon nanotube: A first principles study.

    Science.gov (United States)

    Azam, Mohd Asyadi; Alias, Farizul Muiz; Tack, Liew Weng; Seman, Raja Noor Amalina Raja; Taib, Mohamad Fariz Mohamad

    2017-08-01

    Carbon nanotubes (CNTs) have received enormous attention due to their fascinating properties to be used in various applications including electronics, sensing, energy storage and conversion. The first principles calculations within density functional theory (DFT) have been carried out in order to investigate the structural, electronic and optical properties of un-doped and doped CNT nanostructures. O 2 , CO 2 , and CH 3 OH have been chosen as gas molecules to study the adsorption properties based on zigzag (8,0) SWCNTs. The results demonstrate that the adsorption of O 2 , CO 2, and CH 3 OH gas molecules on pristine, Si-doped and B-doped SWCNTs are either physisorption or chemisorption. Moreover, the electronic properties indicating SWCNT shows significant improvement toward gas adsorption which provides the impact of selecting the best gas sensor materials towards detecting gas molecule. Therefore, these pristine, Si-, and B-doped SWCNTs can be considered to be very good potential candidates for sensing application. Copyright © 2017 Elsevier Inc. All rights reserved.

  7. Concentration and electrode material dependence of the voltammetric response of iodide on platinum, glassy carbon and boron-doped diamond in the room temperature ionic liquid 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide

    International Nuclear Information System (INIS)

    Bentley, Cameron L.; Bond, Alan M.; Hollenkamp, Anthony F.; Mahon, Peter J.; Zhang, Jie

    2013-01-01

    The electro-oxidation of iodide has been investigated as a function of concentration using steady-state microelectrode voltammetry, transient cyclic voltammetry and linear-sweep semi-integral voltammetry on platinum, glassy carbon and boron-doped diamond electrodes in the room temperature ionic liquid 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide. Two oxidation processes are observed on all of the investigated electrode materials, with the first being assigned to the oxidation of iodide to triiodide (confirmed by UV/visible spectroscopy) and the second being attributed to the oxidation of triiodide to iodine. Iodide oxidation is kinetically more facile on platinum compared to glassy carbon or boron-doped diamond. At elevated bulk iodide concentrations, the nucleation and growth of sparingly soluble electrogenerated iodine at the electrode surface was observed and imaged in situ using optical microscopy. The diffusion coefficient of iodide was determined to be 2.59 (±0.04) × 10 −7 cm 2 s −1 and independent of the bulk concentration of iodide. The steady-state iodide oxidation current measured at a platinum microelectrode was found to be a linear function of iodide concentration, as expected if there are no contributions from non-Stokesian mass-transport processes (electron hopping and/or Grotthuss-type exchange) under the investigated conditions

  8. Eliminating Light-Induced Degradation in Commercial p-Type Czochralski Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Brett Hallam

    2017-12-01

    Full Text Available This paper discusses developments in the mitigation of light-induced degradation caused by boron-oxygen defects in boron-doped Czochralski grown silicon. Particular attention is paid to the fabrication of industrial silicon solar cells with treatments for sensitive materials using illuminated annealing. It highlights the importance and desirability of using hydrogen-containing dielectric layers and a subsequent firing process to inject hydrogen throughout the bulk of the silicon solar cell and subsequent illuminated annealing processes for the formation of the boron-oxygen defects and simultaneously manipulate the charge states of hydrogen to enable defect passivation. For the photovoltaic industry with a current capacity of approximately 100 GW peak, the mitigation of boron-oxygen related light-induced degradation is a necessity to use cost-effective B-doped silicon while benefitting from the high-efficiency potential of new solar cell concepts.

  9. Preparation of TiO{sub 2}/boron-doped diamond/Ta multilayer films and use as electrode materials for supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Chao, E-mail: sc_sq1988@163.com [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Li, Hongji, E-mail: hongjili@yeah.net [Tianjin Key Laboratory of Organic Solar Cells and Photochemical Conversion, School of Chemistry and Chemical Engineering, Tianjin University of Technology, Tianjin 300384 (China); Li, Cuiping, E-mail: licp226@126.com [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Li, Mingji, E-mail: limingji@163.com [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Qu, Changqing, E-mail: quchangqing@tjut.edu.cn [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Yang, Baohe, E-mail: bhyang207@163.com [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China)

    2015-12-01

    Highlights: • BDD film was deposited on Ta substrate by hot filament CVD method. • Ti layer was deposited on BDD film by radio frequency magnetron sputtering. • Nanostructured TiO{sub 2}/BDD/nanoporous Ta films were prepared. • The films exhibit good capacitance performance and excellent stability. - Abstract: We report nanostructured TiO{sub 2}/boron-doped diamond (BDD)/Ta multilayer films and their electrochemical performances as supercapacitor electrodes. The BDD films were grown on Ta substrates using electron-assisted hot filament chemical vapor deposition. Ti metal layers were deposited on the BDD surfaces by radio frequency magnetron sputtering, and nanostructured TiO{sub 2}/BDD/Ta thin films were prepared by electrochemical etching and thermal annealing. The successful formation of TiO{sub 2} and Ta layered nanostructures was demonstrated using scanning electron and transmission electron microscopies. The electrochemical responses of these electrodes were evaluated by examining their use as electrical double-layer capacitors, using cyclic voltammetry, and galvanostatic charge/discharge and impedance measurements. When the TiO{sub 2}/BDD/Ta film was used as the working electrode with 0.1 M Na{sub 2}SO{sub 4} as the electrolyte, the capacitor had a specific capacitance of 5.23 mF cm{sup −2} at a scan rate of 5 mV s{sup −1} for a B/C ratio of 0.1% w/w. Furthermore, the TiO{sub 2}/BDD/Ta film had improved electrochemical stability, with a retention of 89.3% after 500 cycles. This electrochemical behavior is attributed to the quality of the BDD, the surface roughness and electrocatalytic activities of the TiO{sub 2} layer and Ta nanoporous structures, and the synergies between them. These results show that TiO{sub 2}/BDD/Ta films are promising as capacitor electrodes for special applications.

  10. Rapid and sensitive electrochemical determination of codeine in pharmaceutical formulations and human urine using a boron-doped diamond film electrode

    International Nuclear Information System (INIS)

    Švorc, Ľubomír; Sochr, Jozef; Svítková, Jana; Rievaj, Miroslav; Bustin, Dušan

    2013-01-01

    Highlights: ► Novel electrochemical sensor for the determination of codeine is presented. ► Codeine provided a single oxidation peak at +1.0 V vs. Ag/AgCl in BRBS at pH 7. ► Detection limit of 0.08 μM was achieved without electrode surface modification. ► Benefits of method: rapidity, low cost, low elaborateness and high repeatability. ► Possibility for drug quality control and drug analysis of biological samples. - Abstract: An unmodified boron-doped diamond film electrode was used for the first time as a sensitive and selective electrochemical sensor for the determination of codeine by the use of differential pulse voltammetry. Codeine provided a single well-defined oxidation peak at +1.0 V vs. Ag/AgCl in Britton-Robinson buffer solution at pH 7.0. Using the optimal differential pulse voltammetric conditions (modulation amplitude of 50 mV, modulation time of 40 ms and scan rate of 50 mV s −1 ), the detection limit of 0.08 μM, the linear response of peak current on codeine concentration in the range from 0.1 to 60 μM (R 2 = 0.998, n = 6) and relative standard deviation of 0.9% at 10 μM concentration level (n = 10) were achieved without any electrode surface modification. The influence of potential interfering agents on the current response was also studied and the results indicated that the proposed method was sufficiently selective. The method was successfully applied in the determination of codeine in real samples including pharmaceutical tablets and human urine with results similar to those declared by manufacturer and obtained by reference high-performance liquid chromatography method, respectively. The typical benefits of the method may be summarized as: rapidity (20 determinations per hour), sensitivity and selectivity, low cost and elaborateness, simplicity, wide linear concentration range, low detection limit and excellent repeatability. It might also represent the competitive alternative to the existing analytical methods in monitoring of

  11. Development and application of a labmade apparatus using open-source “arduino” hardware for the electrochemical pretreatment of boron-doped diamond electrodes

    International Nuclear Information System (INIS)

    Rosa, Thalles Ramon; Betim, Fernando Silva; Ferreira, Rafael de Queiroz

    2017-01-01

    Highlights: • BDD electrodes use an electrochemical pretreatment (anodic and/or cathodic) to restore their original characteristics and promote the reproduction of previous voltammograms; • Automatic system can carefully reproduce the electrochemical pretreatment of BDD electrode quickly and efficiently; • Open source platform “Arduino” can be used to developed a labmade apparatus to control a BDD electrode pretreatment system for analytical purposes; • The main advantages of this labmade apparatus are: low supporting electrolyte consumption (20 mL), a total time for each pretreatment of 80 seconds and an average cost of production below US$ 200. - Abstract: Every day, new electroanalytical methodologies are developed to supplant the established spectrometric and chromatographic methods due to their versatility, low cost and ability to perform measurements without sample treatment. Electroanalytical techniques have provided an alternative to quantify substances due to the direct relationship between the analyte concentration and some electrical property of the system. However, this ratio between the concentration and peak current is valid only if the electrochemically active area of the working electrode is constant in each electrochemical test. For years, classic polarography ensured the reproducibility of the mercury electrode surface due to its liquid state at room temperature. However, this metal has a high toxicity, driving the search for new inert materials for their replacement, most notably boron-doped diamond (BDD) electrodes. This electrode material has, among other attractive advantages for electroanalysis, a potential range higher than that of the mercury working electrode under the same conditions. Solid electrodes are, in general, polished to promote the reproducibility of their electrochemical performance. For BDD, the use of an electrochemical pretreatment (anodic and/or cathodic) has been sufficient to restore their original

  12. Substrate and p-layer effects on polymorphous silicon solar cells

    Directory of Open Access Journals (Sweden)

    Abolmasov S.N.

    2014-07-01

    Full Text Available The influence of textured transparent conducting oxide (TCO substrate and p-layer on the performance of single-junction hydrogenated polymorphous silicon (pm-Si:H solar cells has been addressed. Comparative studies were performed using p-i-n devices with identical i/n-layers and back reflectors fabricated on textured Asahi U-type fluorine-doped SnO2, low-pressure chemical vapor deposited (LPCVD boron-doped ZnO and sputtered/etched aluminum-doped ZnO substrates. The p-layers were hydrogenated amorphous silicon carbon and microcrystalline silicon oxide. As expected, the type of TCO and p-layer both have a great influence on the initial conversion efficiency of the solar cells. However they have no effect on the defect density of the pm-Si:H absorber layer.

  13. Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

    Science.gov (United States)

    Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

    2016-12-28

    The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiC x (p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiC x (p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiC x (p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm -2 on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a V oc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p + /p-wafer full-side-passivated rear-side scheme shown here.

  14. Application of electrochemical advanced oxidation processes with a boron-doped diamond anode to degrade acidic solutions of Reactive Blue 15 (Turqueoise Blue) dye

    International Nuclear Information System (INIS)

    Solano, Aline Maria Sales; Martínez-Huitle, Carlos Alberto; Garcia-Segura, Sergi; El-Ghenymy, Abdellatif

    2016-01-01

    Highlights: • Degradation of Reactive Blue 15 solution at pH 3.0 by electrochemical oxidation, electro-Fenton and photoelectro-Fenton. • Hard destruction of the dye and its products by BDD(·OH) and much more rapidly by ·OH. • 94% mineralization by the most powerful photoelectro-Fenton at 66.7 mA cm"−"2, with acetic acid accumulation. • 25 aromatics and heteroaromatics, 30 hydroxylated derivatives and 4 carboxylic acids as products. • Release of Cl"−, SO_4"2"− and pre-eminently NO_3"− during dye mineralization. - Abstract: The degradation of the copper-phthalocyanine dye Reactive Blue 15 dye in sulfate medium has been comparatively studied by electrochemical oxidation with electrogenerated H_2O_2 (EO-H_2O_2), electro-Fenton (EF) and photoelectro-Fenton (PEF). Experiments with 100 cm"3 solutions of 0.203 mmol dm"−"3 dye were performed with a stirred tank reactor containing a boron-doped diamond (BDD) anode and an air-diffusion cathode for continuous H_2O_2 production. Experimental conditions of pH 3.0 and 0.50 mmol dm"−"3 Fe"2"+ as catalyst were found optimal for the EF process by the predominant oxidation with hydroxyl radicals formed in the bulk from Fenton’s reaction between added Fe"2"+ and generated H_2O_2. The kinetics of Reactive Blue 15 abatement was followed by reversed-phase HPLC and always obeyed a pseudo-first-order reaction. The decolorization rate in EO-H_2O_2 was much lower than dye decay due to the formation of large quantities of colored intermediates under the action of hydroxyl radicals generated at the BDD anode from water oxidation. In contrast, the color and dye removals were much more rapid in EF and PEF by the most efficient oxidation of hydroxyl radicals produced from Fenton’s reaction. PEF was the most powerful treatment owing to the photolytic action of UVA irradiation, yielding 94% mineralization after 360 min at 66.7 mA cm"−"2. The effect of current density over the performance of all methods was examined. LC

  15. Highly sensitive electrochemical biosensor for bisphenol A detection based on a diazonium-functionalized boron-doped diamond electrode modified with a multi-walled carbon nanotube-tyrosinase hybrid film.

    Science.gov (United States)

    Zehani, Nedjla; Fortgang, Philippe; Saddek Lachgar, Mohamed; Baraket, Abdoullatif; Arab, Madjid; Dzyadevych, Sergei V; Kherrat, Rochdi; Jaffrezic-Renault, Nicole

    2015-12-15

    A highly sensitive electrochemical biosensor for the detection of Bisphenol A (BPA) in water has been developed by immobilizing tyrosinase onto a diazonium-functionalized boron doped diamond electrode (BDD) modified with multi-walled carbon nanotubes (MWCNTs). The fabricated biosensor exhibits excellent electroactivity towards o-quinone, a product of this enzymatic reaction of BPA oxidation catalyzed by tyrosinase. The developed BPA biosensor displays a large linear range from 0.01 nM to 100 nM, with a detection limit (LOD) of 10 pM. The feasibility of the proposed biosensor has been demonstrated on BPA spiked water river samples. Therefore, it could be a promising and reliable analytical tool for on-site monitoring of BPA in waste water. Copyright © 2015 Elsevier B.V. All rights reserved.

  16. Square-wave voltammetric determination of fungicide fenfuram in real samples on bare boron-doped diamond electrode, and its corrosion properties on stainless steels used to produce agricultural tools

    International Nuclear Information System (INIS)

    Brycht, Mariola; Skrzypek, Sławomira; Kaczmarska, Kinga; Burnat, Barbara; Leniart, Andrzej; Gutowska, Natalia

    2015-01-01

    Graphical abstract: Display Omitted -- Highlights: • A bare boron-doped diamond electrode was first used to determine fenfuram. • A sensitive voltammetric procedure for the determination of fenfuram was developed. • The sensor showed high sensitivity, selectivity, and wide linear range. • The procedure was successfully applied to detect fenfuram in real samples. • The effect of fenfuram on the uniform and pitting corrosion of steel was stated. -- Abstract: A simple, selective, and sensitive electroanalytical method for the determination of a novel fungicide, fenfuram (Fnf), on a bare boron-doped diamond electrode (BDDE) using square-wave voltammetry (SWV) was developed. For the first time, the electrochemical oxidation of Fnf at BDDE at about 1.5 V vs. Ag/AgCl reference electrode in 0.35 mol L −1 sulfuric acid was investigated. To select the optimum experimental conditions, the effects of the supporting electrolyte, pH, frequency, amplitude, and step potential were studied. The developed method allowed the determination of Fnf in the concentration range of 2.4 × 10 −5 to 2.6 × 10 −4 mol L −1 (LOD = 6.3 × 10 −6 mol L −1 , LOQ = 2.1 × 10 −5 mol L −1 ). The validation of the method was carried out. The proposed procedure was successfully applied to determine Fnf in the spiked natural water samples collected from Polish rivers and in the spiked triticale seed samples by the standard addition method. To understand the Fnf electrode mechanism, the cyclic voltammetry (CV) technique was applied. The oxidation mechanism was also confirmed using mass spectrometry with the electrospray ionization (ESI-MS) technique. Using electrochemical techniques, the effect of Fnf on the corrosion properties of stainless steel which is used to produce agricultural tools was studied

  17. Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals.

    Science.gov (United States)

    Diroll, Benjamin T; Schramke, Katelyn S; Guo, Peijun; Kortshagen, Uwe R; Schaller, Richard D

    2017-10-11

    Dynamic optical control of infrared (IR) transparency and refractive index is achieved using boron-doped silicon nanocrystals excited with mid-IR optical pulses. Unlike previous silicon-based optical switches, large changes in transmittance are achieved without a fabricated structure by exploiting strong light coupling of the localized surface plasmon resonance (LSPR) produced from free holes of p-type silicon nanocrystals. The choice of optical excitation wavelength allows for selectivity between hole heating and carrier generation through intraband or interband photoexcitation, respectively. Mid-IR optical pumping heats the free holes of p-Si nanocrystals to effective temperatures greater than 3500 K. Increases of the hole effective mass at high effective hole temperatures lead to a subpicosecond change of the dielectric function, resulting in a redshift of the LSPR, modulating mid-IR transmission by as much as 27%, and increasing the index of refraction by more than 0.1 in the mid-IR. Low hole heat capacity dictates subpicosecond hole cooling, substantially faster than carrier recombination, and negligible heating of the Si lattice, permitting mid-IR optical switching at terahertz repetition frequencies. Further, the energetic distribution of holes at high effective temperatures partially reverses the Burstein-Moss effect, permitting the modulation of transmittance at telecommunications wavelengths. The results presented here show that doped silicon, particularly in micro- or nanostructures, is a promising dynamic metamaterial for ultrafast IR photonics.

  18. Hot spots and heavily dislocated regions in multicrystalling silicon cells

    International Nuclear Information System (INIS)

    Simo, A.; Martinuzzi, S.

    1990-01-01

    The formation mechanism and the electrical consequences of hot spots have been investigated in multicrystalline solar cells. The hot spots were revealed by means of an infrared camera when the cells are reverse biassed in the dark. The minority carrier diffusion length (L n ), the photovoltage (V oc ) and the photocurrent (J sc ) were measured in the hot spot area and far from this zone thanks to mesa diodes. Dark forward I-V curves lead to values of ideality factor (M) and reverse saturation current (J o ). It is found that J o and M are higher in the hot spot area, while J sc , V oc and at a less extent L n are smaller. Large densities of dislocations and lineages structures are revealed in the abnormally heated regions

  19. Intermediate band mobility in heavily titanium-doped silicon layers

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-Diaz, G.; Olea, J.; Martil, I.; Pastor, D. [Dpto. de Fisica Aplicada III (Electricidad y Electronica), Facultad de Ciencias Fisicas, Universidad Complutense de Madrid, 28040 Madrid (Spain); Marti, A.; Antolin, E.; Luque, A [Instituto de Energia Solar, Universidad Politecnica de Madrid, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Ciudad Universitaria sn, 28040 Madrid (Spain)

    2009-09-15

    The sheet resistance and the Hall mobility of high-purity Si wafers, in whose surface Ti atoms are implanted and laser annealed reaching concentrations above 10{sup 21} cm{sup -3}, are measured in the 90-370 K range. Below 240 K, an unconventional behavior is observed that is well explained on the basis of the appearance of an intermediate band (IB) region able to form a blocking junction with the substrate and of the appearance of an IB conduction. Explanations based on ordinary device physics fail to justify all the unconventional behavior of the characteristics observed. (author)

  20. Magnetic field dependence of the critical superconducting current induced by the proximity effect in silicon

    International Nuclear Information System (INIS)

    Nishino, T.; Kawabe, U.; Yamada, E.

    1986-01-01

    The magnetic field dependence of the critical superconducting current induced by the proximity effect in heavily-boron-doped Si is studied experimentally. It is found that the critical current flowing through the p-type-Si-coupled junction decreases with increasing applied magnetic field. The critical current can be expressed as the product of three factors: the current induced by de Gennes's proximity effect, the exponential decrease due to pair breaking by the magnetic field, and the usual diffraction-pattern-like dependence on the magnetic field due to the Josephson effect. The second factor depends on the carrier concentration in the semiconductor. The local critical current shows a rapid decrease at the edge of the electrodes

  1. The effects of lithium counterdoping on radiation damage and annealing in n(+)p silicon solar cells

    Science.gov (United States)

    Weinberg, I.; Brandhorst, H. W., Jr.; Mehta, S.; Swartz, C. K.

    1984-01-01

    Boron-doped silicon n(+)p solar cells were counterdoped with lithium by ion implantation and the resultant n(+)p cells irradiated by 1 MeV electrons. Performance parameters were determined as a function of fluence and a deep level transient spectroscopy (DLTS) study was conducted. The lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. Isochronal annealing studies of cell performance indicate that significant annealing occurs at 100 C. Isochronal annealing of the deep level defects showed a correlation between a single defect at E sub v + 0.43 eV and the annealing behavior of short circuit current in the counterdoped cells. The annealing behavior was controlled by dissociation and recombination of this defect. The DLTS studies showed that counterdoping with lithium eliminated three deep level defects and resulted in three new defects. The increased radiation resistance of the counterdoped cells is due to the interaction of lithium with oxygen, single vacancies and divacancies. The lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

  2. Electrochemical oxidation of acid black 210 dye on the boron-doped diamond electrode in the presence of phosphate ions: Effect of current density, pH, and chloride ions

    International Nuclear Information System (INIS)

    Costa, Carla Regina; Montilla, Francisco; Morallon, Emilia; Olivi, Paulo

    2009-01-01

    The electrochemical oxidation of acid black 210 dye (AB-210) on the boron-doped diamond (BDD) was investigated under different pH conditions. The best performance for the AB-210 oxidation occurred in alkaline phosphate solution. This is probably due to oxidizing agents such as phosphate radicals and peroxodiphosphate ions, which can be electrochemically produced with good yields on the BDD anode, mainly in alkaline solution. Under this condition, the COD (chemical oxygen demand) removal was higher than that obtained from the model proposed by Comninellis. Electrolyses performed in phosphate buffer and in the presence of chloride ions resulted in faster COD and color removals in acid and neutral solutions, but in alkaline phosphate solution, a better performance in terms of TOC removal was obtained in the absence of chloride. Moreover, organochloride compounds were detected in all electrolyses performed in the presence of chloride. The AB-210 electrooxidation on BDD using phosphate as supporting electrolyte proved to be interesting since oxidizing species generated from phosphate ions were able to completely degrade the dye without producing organochloride compounds.

  3. Phenol removal from wastewaters by electrochemical oxidation using boron doped diamond (BDD) and Ti/Ti{sub 0.7}Ru{sub 0.3}O{sub 2} DSA Registered-Sign electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Britto-Costa, P.H.; Ruotolo, L.A.M., E-mail: pluis@ufscar.br [Universidade Federal de Sao Carlos (UFSCAR), SP (Brazil). Dept. de Engenharia Quimica

    2012-10-15

    Industrial wastewater containing non-biodegradable organic pollutants consists of highly toxic effluents whose treatment is necessary due to environmental and economical restrictions. In order to treat these effluents, an electrochemical process using a dimensionally stable anode (DSA Registered-Sign ) and boron-doped diamond (BDD) electrode was studied. The performance of these electrodes for COD removal from aqueous phenol solution was evaluated in the absence and presence of different chloride concentrations. The results showed that DSA Registered-Sign could be successfully used to remove COD when high chloride concentration (3035 mg L{sup -1}Cl{sup -}) and mild current density are employed (50 mA cm{sup -2}). On the other hand, the presence of chloride did not have the same significant effect on the COD depletion rate using BDD; however, under mild conditions (50 mA cm{sup -2}, 0.190 m s{sup -1}), the addition of 607 mg L{sup -1} Cl{sup -} improved the COD removal by approximately 52% after 8 hours of electrolysis. The effect of current density (i) and flow velocity (v) were also studied, and it was verified that they have an important role on the process performance, especially when DSA Registered-Sign is used. (author)

  4. A multidimensional high performance liquid chromatography method coupled with amperometric detection using a boron-doped diamond electrode for the simultaneous determination of sulfamethoxazole and trimethoprim in bovine milk

    Energy Technology Data Exchange (ETDEWEB)

    Andrade, Leonardo S.; Moraes, Marcela C. de; Rocha-Filho, Romeu C.; Fatibello-Filho, Orlando [Departamento de Quimica, Universidade Federal de Sao Carlos, C.P. 676, 13560-970 Sao Carlos - SP (Brazil); Cass, Quezia B., E-mail: quezia@pesquisador.cnpq.br [Departamento de Quimica, Universidade Federal de Sao Carlos, C.P. 676, 13560-970 Sao Carlos - SP (Brazil)

    2009-11-10

    The development and validation of a multidimensional HPLC method using an on-line clean-up column coupled with amperometric detection employing a boron-doped diamond (BDD) electrode for the simultaneous determination of sulfamethoxazole (SMX) and trimethoprim (TMP) in bovine milk are presented. Aliquots of pre-prepared skim-milk samples were directly injected into a RAM octyl-BSA column in order to remove proteins that otherwise would interfere with milk analysis. After exclusion of the milk proteins, SMX and TMP were transferred to the analytical column (an octyl column) and the separation of the compounds from one another and from other endogenous milk components was achieved. SMX and TMP were detected amperometrically at 1.25 V vs. Ag/AgCl (3.0 mol L{sup -1} KCl). Results with good linearity in the concentration ranges 50-800 and 25-400 {mu}g L{sup -1} for SMX and TMP, respectively, were obtained and no fouling of the BDD electrode was observed within the experimental period of several hours. The intra- and inter-assay coefficients of variation were less than 10% for both drugs and the obtained LOD values for SMX and TMP were 25.0 and 15.0 {mu}g L{sup -1}, respectively.

  5. A multidimensional high performance liquid chromatography method coupled with amperometric detection using a boron-doped diamond electrode for the simultaneous determination of sulfamethoxazole and trimethoprim in bovine milk

    International Nuclear Information System (INIS)

    Andrade, Leonardo S.; Moraes, Marcela C. de; Rocha-Filho, Romeu C.; Fatibello-Filho, Orlando; Cass, Quezia B.

    2009-01-01

    The development and validation of a multidimensional HPLC method using an on-line clean-up column coupled with amperometric detection employing a boron-doped diamond (BDD) electrode for the simultaneous determination of sulfamethoxazole (SMX) and trimethoprim (TMP) in bovine milk are presented. Aliquots of pre-prepared skim-milk samples were directly injected into a RAM octyl-BSA column in order to remove proteins that otherwise would interfere with milk analysis. After exclusion of the milk proteins, SMX and TMP were transferred to the analytical column (an octyl column) and the separation of the compounds from one another and from other endogenous milk components was achieved. SMX and TMP were detected amperometrically at 1.25 V vs. Ag/AgCl (3.0 mol L -1 KCl). Results with good linearity in the concentration ranges 50-800 and 25-400 μg L -1 for SMX and TMP, respectively, were obtained and no fouling of the BDD electrode was observed within the experimental period of several hours. The intra- and inter-assay coefficients of variation were less than 10% for both drugs and the obtained LOD values for SMX and TMP were 25.0 and 15.0 μg L -1 , respectively.

  6. A multidimensional high performance liquid chromatography method coupled with amperometric detection using a boron-doped diamond electrode for the simultaneous determination of sulfamethoxazole and trimethoprim in bovine milk.

    Science.gov (United States)

    Andrade, Leonardo S; de Moraes, Marcela C; Rocha-Filho, Romeu C; Fatibello-Filho, Orlando; Cass, Quezia B

    2009-11-10

    The development and validation of a multidimensional HPLC method using an on-line clean-up column coupled with amperometric detection employing a boron-doped diamond (BDD) electrode for the simultaneous determination of sulfamethoxazole (SMX) and trimethoprim (TMP) in bovine milk are presented. Aliquots of pre-prepared skim-milk samples were directly injected into a RAM octyl-BSA column in order to remove proteins that otherwise would interfere with milk analysis. After exclusion of the milk proteins, SMX and TMP were transferred to the analytical column (an octyl column) and the separation of the compounds from one another and from other endogenous milk components was achieved. SMX and TMP were detected amperometrically at 1.25V vs. Ag/AgCl (3.0molL(-1) KCl). Results with good linearity in the concentration ranges 50-800 and 25-400microgL(-1) for SMX and TMP, respectively, were obtained and no fouling of the BDD electrode was observed within the experimental period of several hours. The intra- and inter-assay coefficients of variation were less than 10% for both drugs and the obtained LOD values for SMX and TMP were 25.0 and 15.0microgL(-1), respectively.

  7. Mid-infrared plasmonic resonances exploiting heavily-doped Ge on Si

    Science.gov (United States)

    Biagioni, P.; Sakat, E.; Baldassarre, L.; Calandrini, E.; Samarelli, A.; Gallacher, K.; Frigerio, J.; Isella, G.; Paul, D. J.; Ortolani, M.

    2015-03-01

    We address the behavior of mid-infrared localized plasmon resonances in elongated germanium antennas integrated on silicon substrates. Calculations based on Mie theory and on the experimentally retrieved dielectric constant allow us to study the tunability and the figures of merit of plasmon resonances in heavily-doped germanium and to preliminarily compare them with those of the most established plasmonic material, gold.

  8. Hall mobility reduction in single-crystalline silicon gradually compensated by thermal donors activation

    Science.gov (United States)

    Veirman, J.; Dubois, S.; Enjalbert, N.; Garandet, J. P.; Heslinga, D. R.; Lemiti, M.

    2010-06-01

    This letter focuses on the variation of the Hall majority carrier mobility with the dopant compensation level in purely Boron-doped Czochralski grown silicon single crystals. Compensation was varied continuously at the sample scale via a step by step activation of the oxygen-based thermal donors. At room temperature, we show a strong drop in mobility for high compensation levels in both p- and n-type Si. Mobility models taking into account carrier scattering on ionized impurities and phonons could not reproduce this drop. We conclude that a specific effect of compensation must be taken into account to explain the observed behaviour. We qualitatively discuss physical mechanisms susceptible to reduce mobility in highly compensated Si.

  9. Effect of electron injection on defect reactions in irradiated silicon containing boron, carbon, and oxygen

    Science.gov (United States)

    Makarenko, L. F.; Lastovskii, S. B.; Yakushevich, H. S.; Moll, M.; Pintilie, I.

    2018-04-01

    Comparative studies employing Deep Level Transient Spectroscopy and C-V measurements have been performed on recombination-enhanced reactions between defects of interstitial type in boron doped silicon diodes irradiated with alpha-particles. It has been shown that self-interstitial related defects which are immobile even at room temperatures can be activated by very low forward currents at liquid nitrogen temperatures. Their activation is accompanied by the appearance of interstitial carbon atoms. It has been found that at rather high forward current densities which enhance BiOi complex disappearance, a retardation of Ci annealing takes place. Contrary to conventional thermal annealing of the interstitial boron-interstitial oxygen complex, the use of forward current injection helps to recover an essential part of charge carriers removed due to irradiation.

  10. Highly conducting p-type nanocrystalline silicon thin films preparation without additional hydrogen dilution

    Science.gov (United States)

    Patra, Chandralina; Das, Debajyoti

    2018-04-01

    Boron doped nanocrystalline silicon thin film has been successfully prepared at a low substrate temperature (250 °C) in planar inductively coupled RF (13.56 MHz) plasma CVD, without any additional hydrogen dilution. The effect of B2H6 flow rate on structural and electrical properties of the films has been studied. The p-type nc-Si:H films prepared at 5 ≤ B2H6 (sccm) ≤ 20 retains considerable amount of nanocrystallites (˜80 %) with high conductivity ˜101 S cm-1 and dominant crystallographic orientation which has been correlated with the associated increased ultra- nanocrystalline component in the network. Such properties together make the material significantly effective for utilization as p-type emitter layer in heterojunction nc-Si solar cells.

  11. Electro-Fenton, UVA photoelectro-Fenton and solar photoelectro-Fenton degradation of the drug ibuprofen in acid aqueous medium using platinum and boron-doped diamond anodes

    International Nuclear Information System (INIS)

    Skoumal, Marcel; Rodriguez, Rosa Maria; Cabot, Pere Lluis; Centellas, Francesc; Garrido, Jose Antonio; Arias, Conchita; Brillas, Enric

    2009-01-01

    The degradation of a 41 mg dm -3 ibuprofen (2-(4-isobutylphenyl)propionic acid) solution of pH 3.0 has been comparatively studied by electrochemical advanced oxidation processes (EAOPs) like electro-Fenton, UVA photoelectro-Fenton and solar photoelectro-Fenton at constant current density. Experiments were performed in a one-compartment cell with a Pt or boron-doped diamond (BDD) anode and an O 2 -diffusion cathode. Heterogeneous hydroxyl radical (·OH) is generated at the anode surface from water oxidation, while homogeneous ·OH is formed from Fenton's reaction between Fe 2+ and H 2 O 2 generated at the cathode, being its production strongly enhanced from photo-Fenton reaction induced by sunlight. Higher mineralization is attained in all methods using BDD instead Pt, because the former produces greater quantity of ·OH enhancing the oxidation of pollutants. The mineralization rate increases under UVA and solar irradiation by the rapid photodecomposition of complexes of Fe(III) with acidic intermediates. The most potent method is solar photoelectro-Fenton with BDD giving 92% mineralization due to the formation of a small proportion of highly persistent final by-products. The effect of Fe 2+ content, pH and current density on photoelectro-Fenton degradation has been studied. The ibuprofen decay always follows a pseudo-first-order kinetics and its destruction rate is limited by current density and UV intensity. Aromatics such as 1-(1-hydroxyethyl)-4-isobutylbenzene, 4-isobutylacetophenone, 4-isobutylphenol and 4-ethylbenzaldehyde, and carboxylic acids such as pyruvic, acetic, formic and oxalic have been identified as oxidation by-products. Oxalic acid is the ultimate by-product and the fast photodecarboxylation of its complexes with Fe(III) under UVA or solar irradiation explains the higher oxidation power of photoelectro-Fenton methods in comparison to electro-Fenton procedures

  12. Influence of hydrogen effusion from hydrogenated silicon nitride layers on the regeneration of boron-oxygen related defects in crystalline silicon

    International Nuclear Information System (INIS)

    Wilking, S.; Ebert, S.; Herguth, A.; Hahn, G.

    2013-01-01

    The degradation effect boron doped and oxygen-rich crystalline silicon materials suffer from under illumination can be neutralized in hydrogenated silicon by the application of a regeneration process consisting of a combination of slightly elevated temperature and carrier injection. In this paper, the influence of variations in short high temperature steps on the kinetics of the regeneration process is investigated. It is found that hotter and longer firing steps allowing an effective hydrogenation from a hydrogen-rich silicon nitride passivation layer result in an acceleration of the regeneration process. Additionally, a fast cool down from high temperature to around 550 °C seems to be crucial for a fast regeneration process. It is suggested that high cooling rates suppress hydrogen effusion from the silicon bulk in a temperature range where the hydrogenated passivation layer cannot release hydrogen in considerable amounts. Thus, the hydrogen content of the silicon bulk after the complete high temperature step can be increased resulting in a faster regeneration process. Hence, the data presented here back up the theory that the regeneration process might be a hydrogen passivation of boron-oxygen related defects

  13. Radiation hard cryogenic silicon detectors

    International Nuclear Information System (INIS)

    Casagrande, L.; Abreu, M.C.; Bell, W.H.; Berglund, P.; Boer, W. de; Borchi, E.; Borer, K.; Bruzzi, M.; Buontempo, S.; Chapuy, S.; Cindro, V.; Collins, P.; D'Ambrosio, N.; Da Via, C.; Devine, S.; Dezillie, B.; Dimcovski, Z.; Eremin, V.; Esposito, A.; Granata, V.; Grigoriev, E.; Hauler, F.; Heijne, E.; Heising, S.; Janos, S.; Jungermann, L.; Konorov, I.; Li, Z.; Lourenco, C.; Mikuz, M.; Niinikoski, T.O.; O'Shea, V.; Pagano, S.; Palmieuri, V.G.; Paul, S.; Pirollo, S.; Pretzl, K.; Rato, P.; Ruggiero, G.; Smith, K.; Sonderegger, P.; Sousa, P.; Verbitskaya, E.; Watts, S.; Zavrtanik, M.

    2002-01-01

    It has been recently observed that heavily irradiated silicon detectors, no longer functional at room temperature, 'resuscitate' when operated at temperatures below 130 K. This is often referred to as the 'Lazarus effect'. The results presented here show that cryogenic operation represents a new and reliable solution to the problem of radiation tolerance of silicon detectors

  14. Effect of boron-doping on the luminescent and electrical properties of a CdS/Si heterostructure based on Si nanoporous pillar array

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Ling Ling [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); College of Physics and Chemistry, Henan Polytechnic University, Jiaozuo 454000 (China); Wang, Xiao Bo [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); College of Physics and Electrical Engineering, Anyang Normal University, Anyang 455000 (China); Cai, Xiao Jun [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); Li, Xin Jian, E-mail: lixj@zzu.edu.cn [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China)

    2015-05-25

    Highlights: • B-doped CdS/Si-NPA heterostructure was prepared by a CBD method. • B-doping does not affect the crystal structure and surface morphology of CdS/Si-NPA. • The optical/electrical properties of CdS/Si-NPA could be tuned by changing [B]/[Cd] ratio. • CdS/Si-NPA with optimal physical properties could be prepared with [B]/[Cd] = 0.01. • The method may find applications in preparing CdS/Si-NPA devices with high device performances. - Abstract: Using silicon nanoporous pillar array (Si-NPA) as substrates and boric acid as dopant source, a series of CdS/Si nanoheterostructures were prepared by growing B-doped CdS thin films on Si-NPA via a chemical bath deposition (CBD) method. The structural, optical and electrical properties of CdS/Si-NPA were studied as a function of the [B]/[Cd] ratio of the initial CBD solutions. Our results disclosed that B concentration could be tuned effectively through changing the ratio of [B]/[Cd], which would bring large variation on the optical and electrical properties of CdS/Si-NPA without affecting its crystal structure and surface morphology. The samples with optimal optical and electrical properties were prepared with [B]/[Cd] = 0.01, in which the physical properties of relatively strong light absorption, small electrical resistivity, low turn-on voltage, small leakage current density and high breakdown voltage could be obtained. These results indicated that B-doping might be an effective path for promoting the performance of the optoelectronic devices based on CdS/Si-NPA.

  15. Electro-Fenton, UVA photoelectro-Fenton and solar photoelectro-Fenton degradation of the drug ibuprofen in acid aqueous medium using platinum and boron-doped diamond anodes

    Energy Technology Data Exchange (ETDEWEB)

    Skoumal, Marcel; Rodriguez, Rosa Maria; Cabot, Pere Lluis; Centellas, Francesc; Garrido, Jose Antonio; Arias, Conchita [Laboratori d' Electroquimica dels Materials i del Medi Ambient, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain); Brillas, Enric [Laboratori d' Electroquimica dels Materials i del Medi Ambient, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain)], E-mail: brillas@ub.edu

    2009-02-28

    The degradation of a 41 mg dm{sup -3} ibuprofen (2-(4-isobutylphenyl)propionic acid) solution of pH 3.0 has been comparatively studied by electrochemical advanced oxidation processes (EAOPs) like electro-Fenton, UVA photoelectro-Fenton and solar photoelectro-Fenton at constant current density. Experiments were performed in a one-compartment cell with a Pt or boron-doped diamond (BDD) anode and an O{sub 2}-diffusion cathode. Heterogeneous hydroxyl radical ({center_dot}OH) is generated at the anode surface from water oxidation, while homogeneous {center_dot}OH is formed from Fenton's reaction between Fe{sup 2+} and H{sub 2}O{sub 2} generated at the cathode, being its production strongly enhanced from photo-Fenton reaction induced by sunlight. Higher mineralization is attained in all methods using BDD instead Pt, because the former produces greater quantity of {center_dot}OH enhancing the oxidation of pollutants. The mineralization rate increases under UVA and solar irradiation by the rapid photodecomposition of complexes of Fe(III) with acidic intermediates. The most potent method is solar photoelectro-Fenton with BDD giving 92% mineralization due to the formation of a small proportion of highly persistent final by-products. The effect of Fe{sup 2+} content, pH and current density on photoelectro-Fenton degradation has been studied. The ibuprofen decay always follows a pseudo-first-order kinetics and its destruction rate is limited by current density and UV intensity. Aromatics such as 1-(1-hydroxyethyl)-4-isobutylbenzene, 4-isobutylacetophenone, 4-isobutylphenol and 4-ethylbenzaldehyde, and carboxylic acids such as pyruvic, acetic, formic and oxalic have been identified as oxidation by-products. Oxalic acid is the ultimate by-product and the fast photodecarboxylation of its complexes with Fe(III) under UVA or solar irradiation explains the higher oxidation power of photoelectro-Fenton methods in comparison to electro-Fenton procedures.

  16. Mineralization of phthalic acid by solar photoelectro-Fenton with a stirred boron-doped diamond/air-diffusion tank reactor: Influence of Fe3+ and Cu2+ catalysts and identification of oxidation products

    International Nuclear Information System (INIS)

    Garcia-Segura, Sergi; Salazar, Ricardo; Brillas, Enric

    2013-01-01

    Highlights: • Almost total mineralization of phthalic acid by solar photoelectro-Fenton with Fe 3+ , Cu 2+ and Fe 3+ –Cu 2+ mixtures. • Hydroxyl radical generation from photo-Fenton reaction under solar radiation. • Enhancement of the mineralization rate using Fe 3+ and small amounts of Cu 2+ . • Detection of eleven aromatic intermediates and six short-linear carboxylic acids. • Oxidation of Cu(II)-carboxylate complexes with ·OH and photolysis of Fe(III)-carboxylate species. -- Abstract: Here, the substrate decay and mineralization rate for 100 cm 3 of a 2.0 mM phthalic acid solution in 0.10 M Na 2 SO 4 of pH 3.0 have been studied by electro-Fenton (EF) and solar photoelectro-Fenton (SPEF). The electrochemical cell was a stirred tank reactor containing a 3 cm 2 boron-doped diamond (BDD) anode and a 3 cm 2 air-diffusion cathode that generates H 2 O 2 . Cu 2+ and/or Fe 3+ were added as catalysts with total concentration of 0.50 mM and a constant current density of 33.3 mA cm −2 was applied. In EF with Cu 2+ or Fe 3+ alone and SPEF with only Cu 2+ , phthalic acid decayed slowly and poor mineralization was reached because the main oxidant was ·OH produced at the BDD surface from water oxidation. In contrast, the substrate destruction was largely enhanced using SPEF with 0.50 mM Fe 3+ since a high quantity of oxidant ·OH was produced in the bulk induced by photo-Fenton reaction. This treatment led to an almost total mineralization by the photolysis of generated Fe(III)-carboxylate complexes. In all cases, the decay of phthalic acid obeyed a pseudo-first-order reaction. The combination of Cu 2+ and Fe 3+ as catalysts accelerated the mineralization process in SPEF because Cu(II)-carboxylate complexes were also removed with ·OH formed from photo-Fenton reaction. The best SPEF process was found for 0.125 mM Cu 2+ + 0.375 mM Fe 3+ , giving rise to 99% mineralization with 40% current efficiency and 0.294 kWh g −1 TOC energy consumption. Eleven aromatics

  17. Resistivity and thickness effects in dendritic web silicon solar cells

    Science.gov (United States)

    Meier, D. L.; Hwang, J. M.; Greggi, J.; Campbell, R. B.

    1987-01-01

    The decrease of minority carrier lifetime as resistivity decreases in dendritic-web silicon solar cells is addressed. This variation is shown to be consistent with the presence of defect levels in the bandgap which arise from extended defects in the web material. The extended defects are oxide precipitates (SiOx) and the dislocation cores they decorate. Sensitivity to this background distribution of defect levels increases with doping because the Fermi level moves closer to the majority carrier band edge. For high-resistivity dendritic-web silicon, which has a low concentration of these extended defects, cell efficiencies as high as 16.6 percent (4 sq cm, 40 ohm-cm boron-doped base, AM1.5 global, 100 mW/sq cm, 25 C JPL LAPSS1 measurement) and a corresponding electron lifetime of 38 microsec have been obtained. Thickness effects occur in bifacial cell designs and in designs which use light trapping. In some cases, the dislocation/precipitate defect can be passivated through the full thickness of web cells by hydrogen ion implantation.

  18. A buffer-layer/a-SiO{sub x}:H(p) window-layer optimization for thin film amorphous silicon based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Park, Jinjoo; Dao, Vinh Ai [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Shin, Chonghoon [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Park, Hyeongsik [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Minbum; Jung, Junhee [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Doyoung [School of Electricity and Electronics, Ulsan College West Campus, Ulsan 680-749 (Korea, Republic of); Yi, Junsin, E-mail: yi@yurim.skku.ac.kr [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2013-11-01

    Amorphous silicon based (a-Si:H-based) solar cells with a buffer-layer/boron doped hydrogenated amorphous silicon oxide (a-SiO{sub x}:H(p)) window-layer were fabricated and investigated. In the first part, in order to reduce the Schottky barrier height at the fluorine doped tin oxide (FTO)/a-SiO{sub x}:H(p) window-layer heterointerface, we have used buffer-layer/a-SiO{sub x}:H(p) for the window-layer, in which boron doped hydrogenated amorphous silicon (a-Si:H(p)) or boron doped microcrystalline silicon (μc-Si:H(p)) is introduced as a buffer layer between the a-SiO{sub x}:H(p) and FTO of the a-Si:H-based solar cells. The a-Si:H-based solar cell using a μc-Si:H(p) buffer-layer shows the highest efficiency compared to the optimized bufferless, and a-Si:H(p) buffer-layer in the a-Si:H-based solar cells. This highest performance was attributed not only to the lower absorption of the μc-Si:H(p) buffer-layer but also to the lower Schottky barrier height at the FTO/window-layer interface. Then, we present the dependence of the built-in potential (V{sub bi}) and blue response of the devices on the inversion of activation energy (ξ) of the a-SiO{sub x}:H(p), in the μc-Si:H(p)/a-SiO{sub x}:H(p) window-layer. The enhancement of both V{sub bi} and blue response is observed, by increasing the value of ξ. The improvement of V{sub bi} and blue response can be ascribed to the enlargement of the optical gap of a-SiO{sub x}:H(p) films in the μc-Si:H(p)/a-SiO{sub x}:H(p) window-layer. Finally, the conversion efficiency was increased by 22.0%, by employing μc-Si:H(p) as a buffer-layer and raising the ξ of the a-SiO{sub x}:H(p), compared to the optimized bufferless case, with a 10 nm-thick a-SiO{sub x}:H(p) window-layer. - Highlights: • Low Schottky barrier height benefits fill factor, and open-circuit voltage (V{sub oc}). • High band gap is beneficial for short-circuit current density (J{sub sc}). • Boron doped microcrystalline silicon is a suitable buffer-layer for

  19. Positron trapping in heavily irradiated semiconductors

    International Nuclear Information System (INIS)

    Moser, P.; Pautrat, J.L.; Corbel, C.; Hautojarvi, P.

    1985-01-01

    Vacancy processes are studied in several heavily irradiated semiconductors. Specimens are ZnTe, CdTe, CdTe (In), InP, InP (Cr), InP (Zn) and Ge. Irradiations are made at 20 K using a 3 MeV Van de Graaff electron accelerator. Doses are 4 x 10 18 e - /cm 2 . Lifetime measurements are made at 77 K at each step of an isochronal annealing (30 min 20 K). In each specimen, the results show a significant increase of the lifetime (+ 30 at + 50 ps) which anneals out in different steps restoring the initial lifetime. The steps are sharp (ΔT/T=0.3) with the exception of InP, InP(Cr), InP(Zn), (ΔT/T=0.9). Tentative interpretations are given

  20. Boron-doped manganese dioxide for supercapacitors.

    Science.gov (United States)

    Chi, Hong Zhong; Li, Yuwei; Xin, Yingxu; Qin, Haiying

    2014-11-11

    The addition of boron as a dopant during the reaction between carbon fiber and permanganate led to significant enhancement of the growth-rate and formation of the porous framework. The doped MnO2 was superior to the pristine sample as electrode materials for supercapacitors in terms of the specific capacitance and rate capability.

  1. Characterization of boron doped nanocrystalline diamonds

    International Nuclear Information System (INIS)

    Peterlevitz, A C; Manne, G M; Sampaio, M A; Quispe, J C R; Pasquetto, M P; Iannini, R F; Ceragioli, H J; Baranauskas, V

    2008-01-01

    Nanostructured diamond doped with boron was prepared using a hot-filament assisted chemical vapour deposition system fed with an ethyl alcohol, hydrogen and argon mixture. The reduction of the diamond grains to the nanoscale was produced by secondary nucleation and defects induced by argon and boron atoms via surface reactions during chemical vapour deposition. Raman measurements show that the samples are nanodiamonds embedded in a matrix of graphite and disordered carbon grains, while morphological investigations using field electron scanning microscopy show that the size of the grains ranges from 20 to 100 nm. The lowest threshold fields achieved were in the 1.6 to 2.4 V/μm range

  2. XPS analysis of boron doped heterofullerenes

    Energy Technology Data Exchange (ETDEWEB)

    Schnyder, B; Koetz, R [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muhr, H J; Nesper, R [ETH Zurich, Zurich (Switzerland)

    1997-06-01

    Boron heterofullerenes were generated through arc-evaporation of doped graphite rods in a helium atmosphere. According to mass spectrometric analysis only mono-substituted fullerenes like C{sub 59}B, C{sub 69}B and higher homologues together with a large fraction of higher undoped fullerenes were extracted and enriched when pyridine was used as the solvent. XPS analysis of the extracts indicated the presence of two boron species with significantly different binding energies. One peak was assigned to borid acid. The second one corresponds to boron in the fullerene cage, which is mainly C{sub 59}B, according to the mass spectrum. This boron is in a somewhat higher oxidation state than that of ordinary boron-carbon compounds. The reported synthesis and extraction procedure opens a viable route for production of macroscopic amounts of these compounds. (author) 2 figs., 1 tab., 7 refs.

  3. A novel fabrication method of silicon nano-needles using MEMS TMAH etching techniques

    International Nuclear Information System (INIS)

    Yan Sheping; Xu Yang; Yang Junyi; Wang Huiquan; Jin Zhonghe; Wang Yuelin

    2011-01-01

    Nano-needles play important roles in nanoscale operations. However, current nano-needle fabrication is usually expensive and controling the sizes and angles is complicated. We have developed a simple and low cost silicon nano-needle fabrication method using traditional microelectromechanical system (MEMS) tetramethyl ammonium hydroxide (TMAH) etching techniques. We take advantage of the fact that the decrease of the silicon etch rate in TMAH solutions exhibits an inverse fourth power dependence on the boron doping concentration in our nano-needle fabrication. Silicon nano-needles, with high aspect ratio and sharp angles θ as small as 2.9 deg., are obtained, which could be used for bio-sensors and nano-handling procedures, such as penetrating living cells. An analytic model is proposed to explain the etching evolution of the experimental results, which is used to predict the needle angle, length, and etching time. Based on our method, nano-needles with small acute angle θ can be obtained.

  4. The CMS silicon tracker

    International Nuclear Information System (INIS)

    D'Alessandro, R.; Biggeri, U.; Bruzzi, M.; Catacchini, E.; Civinini, C.; Focardi, E.; Lenzi, M.; Loreti, M.; Meschini, M.; Parrini, G.; Pieri, M.; Albergo, S.; Boemi, D.; Potenza, R.; Tricomi, A.; Angarano, M.; Creanza, D.; Palma, M. de; Fiore, L.; Maggi, G.; My, S.; Raso, G.; Selvaggi, G.; Tempesta, P.; Azzi, P.; Bacchetta, N.; Bisello, D.; Candelori, A.; Castro, A.; Da Rold, M.; Giraldo, A.; Martignon, G.; Paccagnella, A.; Stavitsky, I.; Babucci, E.; Bartalini, P.; Bilei, G.M.; Checcucci, B.; Ciampolini, P.; Lariccia, P.; Mantovani, G.; Passeri, D.; Santocchia, A.; Servoli, L.; Wang, Y.; Bagliesi, G.; Basti, A.; Bosi, F.; Borello, L.; Bozzi, C.; Castaldi, R.; Dell'Orso, R.; Giassi, A.; Messineo, A.; Palla, F.; Raffaelli, F.; Sguazzoni, G.; Starodumov, A.; Tonelli, G.; Vannini, C.; Verdini, P.G.; Xie, Z.; Breuker, H.; Caner, A.; Elliott-Peisert, A.; Feld, L.; Glessing, B.; Hammerstrom, R.; Huhtinen, M.; Mannelli, M.; Marchioro, A.; Schmitt, B.; Stefanini, G.; Connotte, J.; Gu, W.H.; Luebelsmeyer, K.; Pandoulas, D.; Siedling, R.; Wittmer, B.; Della Marina, R.; Freudenreich, K.; Lustermann, W.; Viertel, G.; Eklund, C.; Karimaeki, V.; Skog, K.; French, M.; Hall, G.; Mc Evoy, B.; Raymond, M.; Hrubec, J.; Krammer, M.; Piperov, S.; Tuuva, T.; Watts, S.; Silvestris, L.

    1998-01-01

    The new silicon tracker layout (V4) is presented. The system aspects of the construction are discussed together with the expected tracking performance. Because of the high radiation environment in which the detectors will operate, particular care has been devoted to the study of the characteristics of heavily irradiated detectors. This includes studies on performance (charge collection, cluster size, resolution, efficiency) as a function of the bias voltage, integrated fluence, incidence angle and temperature. (author)

  5. High mechanical Q-factor measurements on silicon bulk samples

    Energy Technology Data Exchange (ETDEWEB)

    Nawrodt, R; Zimmer, A; Koettig, T; Schwarz, C; Heinert, D; Hudl, M; Neubert, R; Thuerk, M; Nietzsche, S; Vodel, W; Seidel, P [Friedrich-Schiller-Universitaet, Institut fuer Festkoerperphysik, Helmholtzweg 5, D-07743 Jena (Germany); Tuennermann, A [Friedrich-Schiller-Universitaet, Institut fuer Angewandte Physik, Max-Wien-Platz 1, D-07743 Jena (Germany)], E-mail: ronny.nawrodt@uni-jena.de

    2008-07-15

    Future gravitational wave detectors will be limited by different kinds of noise. Thermal noise from the coatings and the substrate material will be a serious noise contribution within the detection band of these detectors. Cooling and the use of a high mechanical Q-factor material as a substrate material will reduce the thermal noise contribution from the substrates. Silicon is one of the most interesting materials for a third generation cryogenic detector. Due to the fact that the coefficient of thermal expansion vanishes at 18 and 125 K the thermoelastic contribution to the thermal noise will disappear. We present a systematic analysis of the mechanical Q-factor at low temperatures between 5 and 300 K on bulk silicon (100) samples which are boron doped. The thickness of the cylindrical samples is varied between 6, 12, 24, and 75mm with a constant diameter of 3 inches. For the 75mm substrate a comparison between the (100) and the (111) orientation is presented. In order to obtain the mechanical Q-factor a ring-down measurement is performed. Thus, the substrate is excited to resonant vibrations by means of an electrostatic driving plate and the subsequent ring-down is recorded using a Michelson-like interferometer. The substrate itself is suspended as a pendulum by means of a tungsten wire loop. All measurements are carried out in a special cryostat which provides a temperature stability of better than 0.1K between 5 and 300K during the experiment. The influence of the suspension on the measurements is experimentally investigated and discussed. At 5.8K a highest Q-factor of 4.5 x 10{sup 8} was achieved for the 14.9 kHz mode of a silicon (100) substrate with a diameter of 3 inches and a thickness of 12 mm.

  6. Study of boron distribution in silicon structure by side long section technique

    International Nuclear Information System (INIS)

    Kadirova, M.; Zhumaev, N.; Simakhin, Yu.F.; Usmanova, M.M.

    1997-01-01

    To study deep boron diffusion in the complex silicon structures, consisting of interchange boron doping layers of mono- and polycrystalline silicon, separated by oxide films a technique of side long section by using Solid State Nuclear Track Detector (SSNTD) has been elaborated. The boron distribution technique is based on the detection of alpha-particles from the 10 B(n,α) 7 Li reaction with cellulose nitrate film. The etched α-track registering cellulose nitrite film show the structure image magnified 1/sinφ fold. Boron concentration defined by density of the etched pits appearing on the film surface. An optical microscope analysis of the sample track-mapping image is realised by examination with closely spaced (Δl < Δx/sinφ) and largely spaced (Δl ≥ Δx/sinφ) movements. For analysis of both experimental data the computer application programs have been developed. An universal algorithm for determination of the boron profiles has been created to take into account influence of a deeper layers on a total measurement of track density when Δl < Δx/sinφ. (author)

  7. Near infrared photoluminescence properties of porous silicon prepared under the influence of light illumination

    International Nuclear Information System (INIS)

    Hamadeh, H; Naddaf, M; Jazmati, A

    2008-01-01

    Porous silicon (PS) has been prepared by anodic etching of boron doped silicon under the influence of monochromatic light illumination. The optical properties of the PS samples have been investigated using temperature dependent photoluminescence (PL) spectroscopy. An overall enhancement of the infrared luminescence yield is caused by the light illumination. In the visible spectral range, changes at the low energy side of the broad PL band were observed. In the near infrared spectral range, a new PL band at 850 nm, which is strongly correlated with light illumination, was detected. The new PL band disappears once blue light is used, whereas an increase in its intensity is observed, when the etching is performed under the illumination of light with wavelengths close to the band gap. By increasing the temperature, the 850 nm transition band grows at the expense of the main near infrared transition at 1100 nm. The recombination characteristics of this PL band are indicative of its extrinsic nature. The macroscopic morphology shows strong dependence on the wavelength of the illumination light. Photoassisted preparation could provide a tool for the control of the optical and structural properties of PS.

  8. Near infrared photoluminescence properties of porous silicon prepared under the influence of light illumination

    Energy Technology Data Exchange (ETDEWEB)

    Hamadeh, H; Naddaf, M; Jazmati, A [Department of Physics, Atomic Energy Commission of Syria, PO Box 6091, Damascus (Syrian Arab Republic)], E-mail: Scientific8@aec.org.sy

    2008-12-21

    Porous silicon (PS) has been prepared by anodic etching of boron doped silicon under the influence of monochromatic light illumination. The optical properties of the PS samples have been investigated using temperature dependent photoluminescence (PL) spectroscopy. An overall enhancement of the infrared luminescence yield is caused by the light illumination. In the visible spectral range, changes at the low energy side of the broad PL band were observed. In the near infrared spectral range, a new PL band at 850 nm, which is strongly correlated with light illumination, was detected. The new PL band disappears once blue light is used, whereas an increase in its intensity is observed, when the etching is performed under the illumination of light with wavelengths close to the band gap. By increasing the temperature, the 850 nm transition band grows at the expense of the main near infrared transition at 1100 nm. The recombination characteristics of this PL band are indicative of its extrinsic nature. The macroscopic morphology shows strong dependence on the wavelength of the illumination light. Photoassisted preparation could provide a tool for the control of the optical and structural properties of PS.

  9. Near infrared photoluminescence properties of porous silicon prepared under the influence of light illumination

    International Nuclear Information System (INIS)

    Hamadeh, H.; Naddaf, M.; Jazmati, A.

    2009-01-01

    Porous silicon (PS) has been prepared by anodic etching of boron doped silicon under the influence of monochromatic light illumination. The optical properties of the PS samples have been investigated using temperature dependent photoluminescence (PL) spectroscopy. An overall enhancement of the infrared luminescence yield is caused by the light illumination. In the visible spectral range, changes at the low energy side of the broad PL band were observed. In the near infrared spectral range, a new PL band at 850 nm, which is strongly correlated with light illumination, was detected. The new PL band disappears once blue light is used, whereas an increase of its intensity is observed, when the etching is performed under the illumination of light with wavelengths close to the band gap. By increasing the temperature, the 850 nm transition band grows at the expense of the main near infrared transition at 1100 nm. The recombination characteristics of this PL band are indicative of its extrinsic nature. The macroscopic morphology shows strong dependence on the wavelength of the illumination light. Photoassisted preparation could provide a tool for the control of the optical and structural properties of PS. (author)

  10. Near infrared photoluminescence properties of porous silicon prepared under the influence of light illumination

    Science.gov (United States)

    Hamadeh, H.; Naddaf, M.; Jazmati, A.

    2008-12-01

    Porous silicon (PS) has been prepared by anodic etching of boron doped silicon under the influence of monochromatic light illumination. The optical properties of the PS samples have been investigated using temperature dependent photoluminescence (PL) spectroscopy. An overall enhancement of the infrared luminescence yield is caused by the light illumination. In the visible spectral range, changes at the low energy side of the broad PL band were observed. In the near infrared spectral range, a new PL band at 850 nm, which is strongly correlated with light illumination, was detected. The new PL band disappears once blue light is used, whereas an increase in its intensity is observed, when the etching is performed under the illumination of light with wavelengths close to the band gap. By increasing the temperature, the 850 nm transition band grows at the expense of the main near infrared transition at 1100 nm. The recombination characteristics of this PL band are indicative of its extrinsic nature. The macroscopic morphology shows strong dependence on the wavelength of the illumination light. Photoassisted preparation could provide a tool for the control of the optical and structural properties of PS.

  11. The effects of trichloroethane HCl and ion-implantation on the oxidation rate of silicon

    International Nuclear Information System (INIS)

    Ahmed, W.; Ahmed, E.

    1994-01-01

    The thermal oxidation of silicon was studied using a large-scale industrial oxidation system. The characteristics of the oxides resulting from pure hydrogen/oxygen (Hsub(2)/Osub(2)), trichloroethane/oxygen (TCA/Osub(2) and hydrogen chloride/oxygen (HCI/Osub(2)) mixtures are compared. Both HCI and TCA addition to oxygen produced an enhanced oxidation rate. The oxidation rate for TCA/Osub(2) was approximately 30-40% higher than for HCI/Osub(2) mixtures. A molar ratio of TCA/Osub(2) of 1% gives an optimum process for very-large-scale industrial (VLSI) applications. However, 3% HCI/Osub(2) gives comparable results to 1% TCA. In addition, boron and phosphorus implantation are observed to increase the oxidation rate. Phosphorus doping of the silicon yields a higher rate than boron-doped wafers. This behaviour is explained in terms of surface damage and chemistry. It appears that the overall mechanisms governing all these processes are similar. (8 figures, 22 references) (Author)

  12. Two-dimensional numerical simulation of boron diffusion for pyramidally textured silicon

    International Nuclear Information System (INIS)

    Ma, Fa-Jun; Duttagupta, Shubham; Shetty, Kishan Devappa; Meng, Lei; Hoex, Bram; Peters, Ian Marius; Samudra, Ganesh S.

    2014-01-01

    Multidimensional numerical simulation of boron diffusion is of great relevance for the improvement of industrial n-type crystalline silicon wafer solar cells. However, surface passivation of boron diffused area is typically studied in one dimension on planar lifetime samples. This approach neglects the effects of the solar cell pyramidal texture on the boron doping process and resulting doping profile. In this work, we present a theoretical study using a two-dimensional surface morphology for pyramidally textured samples. The boron diffusivity and segregation coefficient between oxide and silicon in simulation are determined by reproducing measured one-dimensional boron depth profiles prepared using different boron diffusion recipes on planar samples. The established parameters are subsequently used to simulate the boron diffusion process on textured samples. The simulated junction depth is found to agree quantitatively well with electron beam induced current measurements. Finally, chemical passivation on planar and textured samples is compared in device simulation. Particularly, a two-dimensional approach is adopted for textured samples to evaluate chemical passivation. The intrinsic emitter saturation current density, which is only related to Auger and radiative recombination, is also simulated for both planar and textured samples. The differences between planar and textured samples are discussed

  13. Silicone metalization

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  14. Remote Excavation of Heavily Contaminated UXO Sites. The Range Master

    National Research Council Canada - National Science Library

    Crandall, Alan L

    2007-01-01

    USA Environmental, Inc., and Timberline Environmental Services, Inc., developed the Range Master, a remote controlled scraper with an integrated power screen, to excavate and sift the top 12 inches of heavily contaminated UXO sites...

  15. Radiation damage and defect behavior in proton irradiated lithium-counterdoped n+p silicon solar cells

    Science.gov (United States)

    Stupica, John; Goradia, Chandra; Swartz, Clifford K.; Weinberg, Irving

    1987-01-01

    Two lithium-counterdoped n+p silicon solar cells with different lithium concentrations were irradiated by 10-MeV protons. Cell performance was measured as a function of fluence, and it was found that the cell with the highest concentration of lithium had the highest radiation resistance. Deep level transient spectroscopy which showed two deep level defects that were lithium related. Relating the defect energy levels obtained from this study with those from earlier work using 1-MeV electron irradiation shows no correlation of the defect energy levels. There is one marked similarity: the absence of the boron-interstitial-oxygen-interstitial defect. This consistency strengthens the belief that lithium interacts with oxygen to prevent the formation of the boron interstitial-oxygen interstitial defect. The results indicate that, in general, addition of lithium in small amounts to the p-base of a boron doped silicon solar cell such that the base remains p-type, tends to increase the radiation resistance of the cell.

  16. Radiation damage and defect behavior in proton irradiated lithium-counterdoped n/sup +/p silicon solar cells

    International Nuclear Information System (INIS)

    Stupica, J.; Goradia, C.; Swartz, C.K.; Weinberg, I.

    1987-01-01

    Two lithium-counterdoped n/sup +/p silicon solar cells with different lithium concentrations were irradiated by 10 MeV protons. Cell performance was measured as a function of fluence, and it was found that the cell with the highest concentration of lithium had the higher radiation resistance. Deep level defects were studied using deep level transient spectroscopy which yielded two defects that were lithium related. Relating the defect energy levels obtained from this study under 10 MeV protons, with an earlier work using 1 MeV electron irradiations shows no correlation of the defect energy levels. There is one marked comparison though. The absence of the boron interstitial-oxygen interstitial defect. This consistency strengthens the belief that lithium interacts with oxygen to prevent the formation of the boron interstitial-oxygen interstitial defect. The present results indicate that, in general, addition of lithium in small amounts to the p-base of a boron doped silicon solar cell such that the base remains p-type, tends to increase the radiation resistance of the cell

  17. Quasi-periodic Fibonacci and periodic one-dimensional hypersonic phononic crystals of porous silicon: Experiment and simulation

    Energy Technology Data Exchange (ETDEWEB)

    Aliev, Gazi N., E-mail: g.aliev@bath.ac.uk; Goller, Bernhard [Department of Physics, University of Bath, Bath BA2 7AY (United Kingdom)

    2014-09-07

    A one-dimensional Fibonacci phononic crystal and a distributed Bragg reflector were constructed from porous silicon. The structures had the same number of layers and similar acoustic impedance mismatch, and were electrochemically etched in highly boron doped silicon wafers. The thickness of the individual layers in the stacks was approximately 2 μm. Both types of hypersonic band gap structure were studied by direct measurement of the transmittance of longitudinal acoustic waves in the 0.1–2.6 GHz range. Acoustic band gaps deeper than 50 dB were detected in both structures. The experimental results were compared with model calculations employing the transfer matrix method. The acoustic properties of periodic and quasi-periodic structures in which half-wave retarding bi-layers do not consist of two quarter-wave retarding layers are discussed. The strong correlation between width and depth of gaps in the transmission spectra is demonstrated. The dominant mechanisms of acoustic losses in porous multilayer structures are discussed. The elastic constants remain proportional over our range of porosity, and hence, the Grüneisen parameter is constant. This simplifies the expression for the porosity dependence of the Akhiezer damping.

  18. The CMS silicon tracker

    International Nuclear Information System (INIS)

    Focardi, E.; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bosi, F.; Borrello, L.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Buffini, A.; Busoni, S.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B; Ciampolini, P.; Civinini, C.; Creanza, D.; D'Alessandro, R.; Da Rold, M.; Demaria, N.; De Palma, M.; Dell'Orso, R.; Della Marina, R.; Dutta, S.; Eklund, C.; Feld, L.; Fiore, L.; French, M.; Freudenreich, K.; Frey, A.; Fuertjes, A.; Giassi, A.; Giorgi, M.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammarstrom, R.; Hebbeker, T.; Honma, A.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Leubelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B.Mc; Meschini, M.; Messineo, A.; Migliore, E.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Papi, A.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Radicci, V.; Raffaelli, F.; Raymond, M.; Rizzo, F.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Surrow, B.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Yahong, Li; Watts, S.; Wittmer, B.

    2000-01-01

    This paper describes the Silicon microstrip Tracker of the CMS experiment at LHC. It consists of a barrel part with 5 layers and two endcaps with 10 disks each. About 10 000 single-sided equivalent modules have to be built, each one carrying two daisy-chained silicon detectors and their front-end electronics. Back-to-back modules are used to read-out the radial coordinate. The tracker will be operated in an environment kept at a temperature of T=-10 deg. C to minimize the Si sensors radiation damage. Heavily irradiated detectors will be safely operated due to the high-voltage capability of the sensors. Full-size mechanical prototypes have been built to check the system aspects before starting the construction

  19. Electron beam silicon purification

    Energy Technology Data Exchange (ETDEWEB)

    Kravtsov, Anatoly [SIA ' ' KEPP EU' ' , Riga (Latvia); Kravtsov, Alexey [' ' KEPP-service' ' Ltd., Moscow (Russian Federation)

    2014-11-15

    Purification of heavily doped electronic grade silicon by evaporation of N-type impurities with electron beam heating was investigated in process with a batch weight up to 50 kilos. Effective temperature of the melt, an indicative parameter suitable for purification process characterization was calculated and appeared to be stable for different load weight processes. Purified material was successfully approbated in standard CZ processes of three different companies. Each company used its standard process and obtained CZ monocrystals applicable for photovoltaic application. These facts enable process to be successfully scaled up to commercial volumes (150-300 kg) and yield solar grade silicon. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Effect of p-layer properties on nanocrystalline absorber layer and thin film silicon solar cells

    International Nuclear Information System (INIS)

    Chowdhury, Amartya; Adhikary, Koel; Mukhopadhyay, Sumita; Ray, Swati

    2008-01-01

    The influence of the p-layer on the crystallinity of the absorber layer and nanocrystalline silicon thin film solar cells has been studied. Boron doped Si : H p-layers of different crystallinities have been prepared under different power pressure conditions using the plasma enhanced chemical vapour deposition method. The crystalline volume fraction of p-layers increases with the increase in deposition power. Optical absorption of the p-layer reduces as the crystalline volume fraction increases. Structural studies at the p/i interface have been done by Raman scattering studies. The crystalline volume fraction of the i-layer increases as that of the p-layer increases, the effect being more prominent near the p/i interface. Grain sizes of the absorber layer decrease from 9.2 to 7.2 nm and the density of crystallites increases as the crystalline volume fraction of the p-layer increases and its grain size decreases. With increasing crystalline volume fraction of the p-layer solar cell efficiency increases

  1. Multipulse nanosecond laser irradiation of silicon for the investigation of surface morphology and photoelectric properties

    Science.gov (United States)

    Sardar, Maryam; Chen, Jun; Ullah, Zaka; Jelani, Mohsan; Tabassum, Aasma; Cheng, Ju; Sun, Yuxiang; Lu, Jian

    2017-12-01

    We irradiate the single crystal boron-doped silicon (Si) with different number of laser pulses at constant fluence (7.5 J cm-2) in ambient air using Nd:YAG laser and examine its surface morphology and photoelectric properties in details. The results obtained from optical micrographs reveal the increase in heat affected zone (HAZ) and melted area of laser irradiated Si with increasing number of laser pulses. The SEM micrographs evidence the formation of various surface morphologies like laser induced periodic surface structures, crater, microcracks, clusters, cavities, pores, trapped bubbles, nucleation sites, micro-bumps, redeposited material and micro- and nano-particles on the surface of irradiated Si. The surface profilometry analysis informs that the depth of crater is increased with increase in number of incident laser pulses. The spectroscopic ellipsometry reveals that the multipulse irradiation of Si changes its optical properties (refractive index and extinction coefficient). The current-voltage (I-V) characteristic curves of laser irradiated Si show that although the multipulse laser irradiation produces considerable number of surface defects and damages, the electrical properties of Si are well sustained after the multipulse irradiation. The current findings suggest that the multipulse irradiation can be an effective way to tune the optical properties of Si for the fabrication of wide range of optoelectronic devices.

  2. Spectroscopy of bound multi exciton complexes and deep centers in implanted and annealed silicon

    International Nuclear Information System (INIS)

    Babich, V.M.; Valakh, M.Ya.; Kovalchuk, V.B.; Rudko, G.Yu.; Shakhrajchuk, N.I.

    1989-01-01

    The change of silicon properties relevant to device physics caused by ion implantation and thermal annealing is studied. It is shown that in boron-doped p-Si the increase of P + ions implantation doses from 10 12 to 10 14 ions/cm 2 lead to a decrease of the broadening of boron bound exciton bands. This behaviour is caused by implantation-induced disordering of the lattice. The subsequent thermal annealing restores the intensity and the halfwidth of the above-mentioned bands and initiates the increase of the bands which correspond to excitons bond on the implanted phosphorus ions. Measurements of phosphorus bound exciton band intensities are applicable to the characterization of the process of phosphorus activation. Analysis of low energy region of luminescence spectra of heat treated samples shows that there is a correlation between the process of implanted phosphorus activation and the one of radiation defects transformation. The influence of germanium doping on the generation of thermal donors by means of spectroscopy of deep centres luminescence has been investigated. It is shown that the introduction of germanium in concentrations of 10 19 -10 20 cm -3 effectively suppresses the generation of thermal donors and deep centres under investigation. (author)

  3. Further considerations for damping in heavily insulated pipe systems

    International Nuclear Information System (INIS)

    Anderson, M.J.; Lindquist, M.R.; Severud, L.K.

    1985-01-01

    Over the past several years a body of test data has been accumulated which demonstrates that damping in small diameter heavily insulated pipe systems is much larger than presently recommended by Regulatory Guide 1.61. This data is generally based on pipe systems using a stand-off insulation design with a heater annulus. Additional tests have how been completed on similar pipe systems using a strap-on insulation design without the heater annulus. Results indicate some reduction in damping over the stand-off designs. Test data has also been obtained on a larger sixteen-inch diameter heavily insulated pipe system. Results of these two additional test series are presented. Revised damping values for seismic design of heavily insulated pipe systems are then recommended

  4. Further considerations for damping in heavily insulated pipe systems

    International Nuclear Information System (INIS)

    Anderson, M.J.; Lindquist, M.R.; Severud, L.K.

    1985-01-01

    Over the past several years a body of test data has been accumulated which demonstrates that damping in small diameter heavily insulated pipe systems is much larger than presently recommended by Regulatory Code 1.61. This data is generally based on pipe systems using a stand-off insulation design with a heater annulus. Additional tests have now been completed on similar pipe systems using a strap-on insulation design without the heater annulus. Results indicate some reduction in damping over the stand-off designs. Test data has also been obtained on a larger sixteen-inch diameter heavily insulated pipe system. Results of these two additional test series are presented. Revised damping values for seismic design for heavily insulated pipe systems are then recommended

  5. Semiconductor Grade, Solar Silicon Purification Project. [photovoltaic solar energy conversion

    Science.gov (United States)

    Ingle, W. M.; Rosler, R. S.; Thompson, S. W.; Chaney, R. E.

    1979-01-01

    A low cost by-product, SiF4, is reacted with mg silicon to form SiF2 gas which is polymerized. The (SiF2)x polymer is heated forming volatile SixFy homologues which disproportionate on a silicon particle bed forming silicon and SiF4. The silicon analysis procedure relied heavily on mass spectroscopic and emission spectroscopic analysis. These analyses demonstrated that major purification had occured and some samples were indistinguishable from semiconductor grade silicon (except possibly for phosphorus). However, electrical analysis via crystal growth reveal that the product contains compensated phosphorus and boron.

  6. Explosive phenomena in heavily irradiated NaCl

    NARCIS (Netherlands)

    denHartog, HW; Vainshtein, DI; Matthews, GE; Williams, RT

    1997-01-01

    In heavily irradiated NaCl crystals explosive phenomena can be initiated during irradiation or afterwards when samples are heated to temperatures between 100 and 250 degrees C. During irradiation of NaCl Na and Cl-2 precipitates and void structures are produced along with the accumulation of stored

  7. Silicon detectors

    International Nuclear Information System (INIS)

    Klanner, R.

    1984-08-01

    The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

  8. Heavily nitrogen doped, graphene supercapacitor from silk cocoon

    International Nuclear Information System (INIS)

    Sahu, Vikrant; Grover, Sonia; Tulachan, Brindan; Sharma, Meenakshi; Srivastava, Gaurav; Roy, Manas; Saxena, Manav; Sethy, Niroj; Bhargava, Kalpana; Philip, Deepu; Kim, Hansung; Singh, Gurmeet; Singh, Sushil Kumar; Das, Mainak; Sharma, Raj Kishore

    2015-01-01

    Doping of graphene with nitrogen is of much interest, since it improves the overall conductivity and supercapacitive properties. Besides conductivity, nitrogen doping also enhances the pseudo-capacitance due to fast and reversible surface redox processes. In this work, we have developed a cheap and easy process for synthesizing heavily nitrogen doped graphene (15% nitrogen) from non-mulberry silk cocoon membrane (Tassar, Antheraea mylitta) by pyrolyzing the cocoon at 400 °C in argon atmosphere. Further we have investigated the performance of this heavily ‘nitrogen doped graphene’ (NDG) in a supercapacitor device. Our results suggest that NDG obtained from cocoon has improved supercapacitor performance. The improved performance is due to the high electronegativity of nitrogen that forms dipoles on the graphene surface. These dipoles consequently enhance the tendency of graphene to attract charged species to its surface. This is a green and clean synthesis approach for developing electronic materials for energy applications

  9. Neutralization study of boron and some metallic impurities (gold, titanium, manganese, chromium) by hydrogen implantation in monocrystal silicon

    International Nuclear Information System (INIS)

    Zundel, T.

    1987-02-01

    Boron doped silicon implanted with hydrogen at low energy in the temperature range 80-140 0 C shows a large decrease of the electrically active dopant concentration up to a depth which increases with the temperature, the implantation duration and the starting material resistivity. This effect is assigned to the formation of an electrically inactive BH complex. The hydrogen incorporation process shows a weakly temperature dependent enhanced diffusion step followed by a normal diffusion phase which may be described by a thermally activated diffusion coefficient. Heating at 80 0 C produces a complete dissociation of the BH complexes in the space charge region of reverse biased Schottky diodes. Consequently the released hydrogen drifts under the electric field and the neutralization becomes more pronounced in the bulk. Hydrogen neutralizes the gold, chromium, manganese related deep levels but has no effect on titanium related defect levels. Thermal annealing at 495 0 C of hydrogenated chromium or manganese doped samples produces four majority carriers levels which disappear at 700 0 C [fr

  10. Quantitative SIMS measurement of high concentration of boron in silicon (up to 20 at.%) using an isotopic comparative method

    International Nuclear Information System (INIS)

    Dubois, Christiane; Prudon, Gilles; Gautier, Brice; Dupuy, Jean-Claude

    2008-01-01

    Highly boron doped (up to 20 at.%) silicon samples have been analysed by SIMS with the aim of quantifying the boron concentration in a range where the dilute regime may not be valid any more. An original method is used based on the simultaneous analysis of two different isotopes, namely 10 B and 11 B, in order that the known concentration of the first isotope (initially present with a far lower, constant concentration) is the basis of the quantification of the concentration of the second, present with a very high dose. Argon and oxygen beams have been used and conclusions are drawn about the presence of matrix effects in the case of the analysis of highly doped samples. It appears that only the use of a 8 keV O 2 + beam leads to a significant matrix effect, whereas it is nearly absent in the case of an analysis under 8 keV Ar + beam. The proposed method may be applied to any element showing at least two isotopes in any binary alloys under any primary beam

  11. Solid-state diffusion as an efficient doping method for silicon nanowires and nanowire field effect transistors

    International Nuclear Information System (INIS)

    Moselund, K E; Ghoneim, H; Schmid, H; Bjoerk, M T; Loertscher, E; Karg, S; Signorello, G; Webb, D; Tschudy, M; Beyeler, R; Riel, H

    2010-01-01

    In this work we investigate doping by solid-state diffusion from a doped oxide layer, obtained by plasma-enhanced chemical vapor deposition (PECVD), as a means for selectively doping silicon nanowires (NWs). We demonstrate both n-type (phosphorous) and p-type (boron) doping up to concentrations of 10 20 cm -3 , and find that this doping mechanism is more efficient for NWs as opposed to planar substrates. We observe no diameter dependence in the range of 25 to 80 nm, which signifies that the NWs are uniformly doped. The drive-in temperature (800-950 deg. C) can be used to adjust the actual doping concentration in the range 2 x 10 18 to 10 20 cm -3 . Furthermore, we have fabricated NMOS and PMOS devices to show the versatility of this approach and the possibility of achieving segmented doping of NWs. The devices show high I on /I off ratios of around 10 7 and, especially for the PMOS, good saturation behavior and low hysteresis.

  12. Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity

    Directory of Open Access Journals (Sweden)

    Verena Steckenreiter

    2017-03-01

    Full Text Available Based on contactless carrier lifetime measurements performed on p-type boron-doped Czochralski-grown silicon (Cz-Si wafers, we examine the rate constant Rde of the permanent deactivation process of the boron-oxygen-related defect center as a function of the illumination intensity I at 170°C. While at low illumination intensities, a linear increase of Rde on I is measured, at high illumination intensities, Rde seems to saturate. We are able to explain the saturation by assuming that Rde increases proportionally with the excess carrier concentration Δn and take the fact into account that at sufficiently high illumination intensities, the carrier lifetime decreases with increasing Δn and hence the slope of Δn(I decreases, leading to an apparent saturation. Importantly, on low-lifetime Cz-Si samples no saturation of the deactivation rate constant is observed for the same illumination intensities, proving that the deactivation is stimulated by the presence of excess electrons and not directly by the photons.

  13. Tungsten silicide contacts to polycrystalline silicon and silicon-germanium alloys

    International Nuclear Information System (INIS)

    Srinivasan, G.; Bain, M.F.; Bhattacharyya, S.; Baine, P.; Armstrong, B.M.; Gamble, H.S.; McNeill, D.W.

    2004-01-01

    Silicon-germanium alloy layers will be employed in the source-drain engineering of future MOS transistors. The use of this technology offers advantages in reducing series resistance and decreasing junction depth resulting in reduction in punch-through and SCE problems. The contact resistance of metal or metal silicides to the raised source-drain material is a serious issue at sub-micron dimensions and must be minimised. In this work, tungsten silicide produced by chemical vapour deposition has been investigated as a contact metallization scheme to both boron and phosphorus doped polycrystalline Si 1- x Ge x , with 0 ≤x ≤ 0.3. Cross bridge Kelvin resistor (CKBR) structures were fabricated incorporating CVD WSi 2 and polycrystalline SiGe. Tungsten silicide contacts to control polysilicon CKBR structures have been shown to be of high quality with specific contact resistance ρ c values 3 x 10 -7 ohm cm 2 and 6 x 10 -7 ohm cm 2 obtained to boron and phosphorus implanted samples respectively. The SiGe CKBR structures show that the inclusion of Ge yields a reduction in ρ c for both dopant types. The boron doped SiGe exhibits a reduction in ρ c from 3 x 10 -7 to 5 x 10 -8 ohm cm 2 as Ge fraction is increased from 0 to 0.3. The reduction in ρ c has been shown to be due to (i) the lowering of the tungsten silicide Schottky barrier height to p-type SiGe resulting from the energy band gap reduction, and (ii) increased activation of the implanted boron with increased Ge fraction. The phosphorus implanted samples show less sensitivity of ρ c to Ge fraction with a lowest value in this work of 3 x 10 -7 ohm cm 2 for a Ge fraction of 0.3. The reduction in specific contact resistance to the phosphorus implanted samples has been shown to be due to increased dopant activation alone

  14. Electrochemical Decontamination of Painted and Heavily Corroded Metals

    International Nuclear Information System (INIS)

    Marczak, S.; Anderson, J.; Dziewinski, J.

    1998-01-01

    The radioactive metal wastes that are generated from nuclear fuel plants and radiochemical laboratories are mainly contaminated by the surface deposition of radioactive isotopes. There are presently several techniques used in removing surface contamination involving physical and chemical processes. However, there has been very little research done in the area of soiled, heavily oxidized, and painted metals. Researchers at Los Alamos National Laboratory have been developing electrochemical procedures for the decontamination of bare and painted metal objects. These methods have been found to be effective on highly corroded as well as relatively new metals. This study has been successful in decontaminating projectiles and shrapnel excavated during environmental restoration projects after 40+ years of exposure to the elements. Heavily corroded augers used in sampling activities throughout the area were also successfully decontaminated. This process has demonstrated its effectiveness and offers several advantages over the present metal decontamination practices of media blasting and chemical solvents. These advantages include the addition of no toxic or hazardous chemicals, low operating temperature and pressure, and easily scaleable equipment. It is in their future plans to use this process in the decontamination of gloveboxes destined for disposal as TRU waste

  15. Advanced silicon materials for photovoltaic applications

    CERN Document Server

    Pizzini, Sergio

    2012-01-01

    Today, the silicon feedstock for photovoltaic cells comes from processes which were originally developed for the microelectronic industry. It covers almost 90% of the photovoltaic market, with mass production volume at least one order of magnitude larger than those devoted to microelectronics. However, it is hard to imagine that this kind of feedstock (extremely pure but heavily penalized by its high energy cost) could remain the only source of silicon for a photovoltaic market which is in continuous expansion, and which has a cumulative growth rate in excess of 30% in the last few years. Ev

  16. Interface properties of the amorphous silicon/crystalline silicon heterojunction photovoltaic cell

    Science.gov (United States)

    Halliop, Basia

    Amorphous-crystalline silicon (a-Si:H/c-Si) heterojunctions have the potential of being a very high efficiency silicon photovoltaic platform technology with accompanying cost and energy budget reductions. In this research a heterojunction cell structure based on a-Si:H deposited using a DC saddle field plasma enhanced vapour deposition (DCSF PECVD) technique is studied, and the a-Si:H/c-Si and indium tin oxide/a-Si:H interfaces are examined using several characterization methods. Photocarrier radiometry (PCR) is used for the first time to probe the a-Si:H/c-Si junction. PCR is demonstrated as a carrier lifetime measurement technique -- specifically, confirming carrier lifetimes above 1 ms for 1-5 Ocm phosphorous-doped c-Si wafers passivated on both sides with 30 nm of i-a-Si:H. PCR is also used to determine surface recombination velocity and mobility, and to probe recombination at the a-Si:H/c-Si interface, distinguishing interface recombination from recombination within the a-Si:H layer or at the a-Si:H surface. A complementary technique, lateral conductivity is applied over a temperature range of 140 K to 430 K to construct energy band diagrams of a-Si:H/c-Si junctions. Boron doped a-Si:H films on glass are shown to have activation energies of 0.3 to 0.35 eV, tuneable by adjusting the diborane to silane gas ratio during deposition. Heterojunction samples show evidence of a strong hole inversion layer and a valence band offset of approximately 0.4 eV; carrier concentration in the inversion layer is reduced in p-a-Si:H/i-a-Si:H/ c-Si structures as intrinsic layer thickness increases, while carrier lifetime is increased. The indium tin oxide/amorphous silicon interface is also examined. Optimal ITO films were prepared with a sheet resistance of 17.3 O/[special character omitted] and AM1.5 averaged transmittance of 92.1%., for a film thickness of approximately 85 nm, using temperatures below 200°C. Two different heat treatments are found to cause crystallization of

  17. Effect of Rapid Thermal Processing on Light-Induced Degradation of Carrier Lifetime in Czochralski p-Type Silicon Bare Wafers

    Science.gov (United States)

    Kouhlane, Y.; Bouhafs, D.; Khelifati, N.; Belhousse, S.; Menari, H.; Guenda, A.; Khelfane, A.

    2016-11-01

    The electrical properties of Czochralski silicon (Cz-Si) p-type boron-doped bare wafers have been investigated after rapid thermal processing (RTP) with different peak temperatures. Treated wafers were exposed to light for various illumination times, and the effective carrier lifetime ( τ eff) measured using the quasi-steady-state photoconductance (QSSPC) technique. τ eff values dropped after prolonged illumination exposure due to light-induced degradation (LID) related to electrical activation of boron-oxygen (BO) complexes, except in the sample treated with peak temperature of 785°C, for which the τ eff degradation was less pronounced. Also, a reduction was observed when using the 830°C peak temperature, an effect that was enhanced by alteration of the wafer morphology (roughness). Furthermore, the electrical resistivity presented good stability under light exposure as a function of temperature compared with reference wafers. Additionally, the optical absorption edge shifted to higher wavelength, leading to increased free-carrier absorption by treated wafers. Moreover, a theoretical model is used to understand the lifetime degradation and regeneration behavior as a function of illumination time. We conclude that RTP plays an important role in carrier lifetime regeneration for Cz-Si wafers via modification of optoelectronic and structural properties. The balance between an optimized RTP cycle and the rest of the solar cell elaboration process can overcome the negative effect of LID and contribute to achievement of higher solar cell efficiency and module performance.

  18. Performance potential of low-defect density silicon thin-film solar cells obtained by electron beam evaporation and laser crystallisation

    Directory of Open Access Journals (Sweden)

    Kim K. H.

    2013-01-01

    Full Text Available A few microns thick silicon films on glass coated with a dielectric intermediate layer can be crystallised by a single pass of a line-focused diode laser beam. Under favorable process conditions relatively large linear grains with low defect density are formed. Most grain boundaries are defect-free low-energy twin-boundaries. Boron-doped laser crystallised films are processed into solar cells by diffusing an emitter from a phosphorous spin-on-dopant source, measuring up to 539 mV open-circuit voltage prior to metallisation. After applying a point-contact metallisation the best cell achieves 7.8% energy conversion efficiency, open-circuit voltage of 526 mV and short-circuit current of 26 mA/cm2. The efficiency is significantly limited by a low fill-factor of 56% due to the simplified metallisation approach. The internal quantum efficiency of laser crystallised cells is consistent with low front surface recombination. By improving cell metallisation and enhancing light-trapping the efficiencies of above 13% can be achieved.

  19. Influence of the formation- and passivation rate of boron-oxygen defects for mitigating carrier-induced degradation in silicon within a hydrogen-based model

    International Nuclear Information System (INIS)

    Hallam, Brett; Abbott, Malcolm; Nampalli, Nitin; Hamer, Phill; Wenham, Stuart

    2016-01-01

    A three-state model is used to explore the influence of defect formation- and passivation rates of carrier-induced degradation related to boron-oxygen complexes in boron-doped p-type silicon solar cells within a hydrogen-based model. The model highlights that the inability to effectively mitigate carrier-induced degradation at elevated temperatures in previous studies is due to the limited availability of defects for hydrogen passivation, rather than being limited by the defect passivation rate. An acceleration of the defect formation rate is also observed to increase both the effectiveness and speed of carrier-induced degradation mitigation, whereas increases in the passivation rate do not lead to a substantial acceleration of the hydrogen passivation process. For high-throughput mitigation of such carrier-induced degradation on finished solar cell devices, two key factors were found to be required, high-injection conditions (such as by using high intensity illumination) to enable an acceleration of defect formation whilst simultaneously enabling a rapid passivation of the formed defects, and a high temperature to accelerate both defect formation and defect passivation whilst still ensuring an effective mitigation of carrier-induced degradation

  20. Stored energy and annealing behavior of heavily deformed aluminium

    DEFF Research Database (Denmark)

    Kamikawa, Naoya; Huang, Xiaoxu; Kondo, Yuka

    2012-01-01

    It has been demonstrated in previous work that a two-step annealing treatment, including a low-temperature, long-time annealing and a subsequent high-temperature annealing, is a promising route to control the microstructure of a heavily deformed metal. In the present study, structural parameters...... are quantified such as boundary spacing, misorientation angle and dislocation density for 99.99% aluminium deformed by accumulative roll-bonding to a strain of 4.8. Two different annealing processes have been applied; (i) one-step annealing for 0.5 h at 100-400°C and (ii) two-step annealing for 6 h at 175°C...... followed by 0.5 h annealing at 200-600°C, where the former treatment leads to discontinuous recrystallization and the latter to uniform structural coarsening. This behavior has been analyzed in terms of the relative change during annealing of energy stored as elastic energy in the dislocation structure...

  1. Measurement of surface recombination velocity on heavily doped indium phosphide

    International Nuclear Information System (INIS)

    Jenkins, P.; Ghalla-Goradia, M.; Faur, M.; Bailey, S.

    1990-01-01

    The controversy surrounding the published low values of surface recombination velocity (SRV) in n-InP, solidified in recent years when modeling of existing n/p InP solar cells revealed that the front surface SRV had to be higher than 1 x 10 6 cm/sec in order to justify the poor blue response that is characteristic of all n/p InP solar cells. In this paper, SRV on heavily doped (>10 18 cm -3 )n-type and p-type InP is measured as a function of surface treatment. For the limited range of substrates and surface treatments studied, SRV and surface stability depend strongly on the surface treatment. SRVs of ∼10 5 cm/sec in both p-type and n-type InP are obtainable, but in n-type the low SRV surfaces were unstable, and the only stable surfaces on n-type had SRVs of >10 6 cm/sec

  2. Einstein's photoemission emission from heavily-doped quantized structures

    CERN Document Server

    Ghatak, Kamakhya Prasad

    2015-01-01

    This monograph solely investigates the Einstein's Photoemission(EP) from Heavily Doped(HD) Quantized Structures on the basis of newly formulated electron dispersion laws. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The EP in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields  that control the studies of such quantum effect devices. The suggestions for the experimental determinations of different important physical quantities in HD 2D and 3D materials  and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring   physical properties in the presence of intense light waves w...

  3. Boron doped diamond electrode for the wastewater treatment

    International Nuclear Information System (INIS)

    Quiroz Alfaro, Marco Antonio; Ferro, Sergio; Martinez-Huitle, Carlos Alberto; Vong, Yunny Meas

    2006-01-01

    Electrochemical studies of diamond were started more than fifteen years ago with the first paper on diamond electrochemistry published by Pleskov. After that, work started in Japan, United States of America, France, Switzerland and other countries. Over the last few years, the number of publications has increased considerably. Diamond films have been the subject of applications and fundamental research in electrochemistry, opening up a new branch known as the electrochemistry of diamond electrodes. Here, we first present a brief history and the process of diamond film synthesis. The principal objective of this work is to summarize the most important results in the electrochemical oxidation using diamond electrodes. (author)

  4. Influence of boron doping on mechanical and tribological properties ...

    Indian Academy of Sciences (India)

    applying at three different normal loads of 1, 5 and 10 N. A sli- ding speed of 8 cm s. −1 ... excellent process control system was used, with growth rate of 1 μmh. −1 ... of tungsten wires (ø 0.12mm) in systematic order were used as hot filaments ...

  5. Boron doped diamond electrode for the wastewater treatment

    Directory of Open Access Journals (Sweden)

    Alfaro Marco Antonio Quiroz

    2006-01-01

    Full Text Available Electrochemical studies of diamond were started more than fifteen years ago with the first paper on diamond electrochemistry published by Pleskov. After that, work started in Japan, United States of America, France, Switzerland and other countries. Over the last few years, the number of publications has increased considerably. Diamond films have been the subject of applications and fundamental research in electrochemistry, opening up a new branch known as the electrochemistry of diamond electrodes. Here, we first present a brief history and the process of diamond film synthesis. The principal objective of this work is to summarize the most important results in the electrochemical oxidation using diamond electrodes.

  6. Vertically aligned nanowires from boron-doped diamond.

    Science.gov (United States)

    Yang, Nianjun; Uetsuka, Hiroshi; Osawa, Eiji; Nebel, Christoph E

    2008-11-01

    Vertically aligned diamond nanowires with controlled geometrical properties like length and distance between wires were fabricated by use of nanodiamond particles as a hard mask and by use of reactive ion etching. The surface structure, electronic properties, and electrochemical functionalization of diamond nanowires were characterized by atomic force microscopy (AFM) and scanning tunneling microscopy (STM) as well as electrochemical techniques. AFM and STM experiments show that diamond nanowire etched for 10 s have wire-typed structures with 3-10 nm in length and with typically 11 nm spacing in between. The electrode active area of diamond nanowires is enhanced by a factor of 2. The functionalization of nanowire tips with nitrophenyl molecules is characterized by STM on clean and on nitrophenyl molecule-modified diamond nanowires. Tip-modified diamond nanowires are promising with respect to biosensor applications where controlled biomolecule bonding is required to improve chemical stability and sensing significantly.

  7. Quantum transport in boron-doped nanocrystalline diamond

    Czech Academy of Sciences Publication Activity Database

    Mareš, Jiří J.; Hubík, Pavel; Krištofik, Jozef; Kindl, Dobroslav; Nesládek, Miloš

    2008-01-01

    Roč. 14, č. 7-8 (2008), s. 161-172 ISSN 0948-1907 R&D Projects: GA ČR GA202/07/0525; GA AV ČR IAA1010404; GA ČR(CZ) GA202/06/0040 Institutional research plan: CEZ:AV0Z10100521 Keywords : nanocrystalline diamond film * ballistic transport * superconductivity * Josephson’s effects Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.483, year: 2008

  8. The Impact of Metallic Impurities on Minority Carrier Lifetime in High Purity N-type Silicon

    Science.gov (United States)

    Yoon, Yohan

    Boron-doped p-type silicon is the industry standard silicon solar cell substrate. However, it has serious limitations: iron boron (Fe-B) pairs and light induced degradation (LID). To suppress LID, the replacement of boron by gallium as a p-type dopant has been proposed. Although this eliminates B-O related defects, gallium-related pairing with iron, oxygen, and carbon can reduce lifetime in this material. In addition resistivity variations are more pronounced in gallium doped ingots, however Continuous-Czochralski (c-Cz) growth technologies are being developed to overcome this problem. In this work lifetime limiting factors and resistivity variations have been investigated in this material. The radial and axial variations of electrically active defects were observed using deep level transient spectroscopy (DLTS) these have been correlated to lifetime and resistivity variations. The DLTS measurements demonstrated that iron-related pairs are responsible for the lifetime variations. Specifically, Fe-Ga pairs were found to be important recombination sites and are more detrimental to lifetime than Fei. Typically n-type silicon has a higher minority carrier lifetime than p-type silicon with similar levels of contamination. That is because n-type silicon is more tolerant to metallic impurities, especially Fe. Also, it has no serious issues in relation to lifetime degradation, such as FeB pairs and light-induced degradation (LID). However, surface passivation of the p + region in p+n solar cells is much more problematic than the n+p case where silicon nitride provides very effective passivation of the cell. SiO2 is the most effective passivation for n type surfaces, but it does not work well on B-doped surfaces, resulting in inadequate performance. Al2O3 passivation layer suggested for B-doped emitters. With this surface passivation layer a 23.2 % conversion efficiency has been achieved. After this discovery n-type silicon is now being seriously considered for

  9. Silicon Qubits

    Energy Technology Data Exchange (ETDEWEB)

    Ladd, Thaddeus D. [HRL Laboratories, LLC, Malibu, CA (United States); Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2018-02-28

    Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of a single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.

  10. Silicon calorimetry for the SSC[ Superconducting Supercollider

    International Nuclear Information System (INIS)

    Bertrand, C.; Borchi, E.; Brau, J.E.

    1989-01-01

    SSC experiments will rely heavily on their calorimeters. Silicon calorimetry, which has been introduced in recent years as a useful technology, has many attractive characteristics which may make it a viable option for consideration. The many attractive properties of silicon detectors are reviewed. The relevant present day applications of large areas of silicon detectors are summarize to illustrate the emerging use. The troublesome issue of radiation damage in a high luminosity environment like the SSC is considered with a summary of much of the recent new measurements which help clarify this situation. A discussion of the electronics and a possible mechanical configuration is presented, followed by a summary of the outstanding R and D issues. 31 refs., 11 figs., 3 tabs

  11. White light emission from engineered silicon carbide

    DEFF Research Database (Denmark)

    Ou, Haiyan

    Silicon carbide (SiC) is a wide indirect bandgap semiconductor. The light emission efficiency is low in nature. But this material has very unique physical properties like good thermal conductivity, high break down field etc in addition to its abundance. Therefore it is interesting to engineer its...... light emission property so that to take fully potential applications of this material. In this talk, two methods, i.e. doping SiC heavily by donor-acceptor pairs and making SiC porous are introduced to make light emission from SiC. By co-doping SiC with nitrogen and boron heavily, strong yellow emission...... is demonstrated. After optimizing the passivation conditions, strong blue-green emission from porous SiC is demonstrated as well. When combining the yellow emission from co-doped SiC and blue-green from porous SiC, a high color rendering index white light source is achieved....

  12. Geochemistry of silicon isotopes

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Tiping; Li, Yanhe; Gao, Jianfei; Hu, Bin [Chinese Academy of Geological Science, Beijing (China). Inst. of Mineral Resources; Jiang, Shaoyong [China Univ. of Geosciences, Wuhan (China).

    2018-04-01

    Silicon is one of the most abundant elements in the Earth and silicon isotope geochemistry is important in identifying the silicon source for various geological bodies and in studying the behavior of silicon in different geological processes. This book starts with an introduction on the development of silicon isotope geochemistry. Various analytical methods are described and compared with each other in detail. The mechanisms of silicon isotope fractionation are discussed, and silicon isotope distributions in various extraterrestrial and terrestrial reservoirs are updated. Besides, the applications of silicon isotopes in several important fields are presented.

  13. Microfabricated Ice-Detection Sensor

    National Research Council Canada - National Science Library

    DeAnna, Russell

    1997-01-01

    .... The sensor is capable of distinguishing between an ice covered and a clean surface. It employs a bulk micromachined wafer with a 7 micrometers thick, boron doped, silicon diaphragm which serves as one plate of a parallel plate capacitor...

  14. CMOS Thermal Ox and Diffusion Furnace: Tystar Tytan 2000

    Data.gov (United States)

    Federal Laboratory Consortium — Description:CORAL Names: CMOS Wet Ox, CMOS Dry Ox, Boron Doping (P-type), Phos. Doping (N-Type)This four-stack furnace bank is used for the thermal growth of silicon...

  15. TOSCA simulation of some effects observed in irradiated silicon detectors

    International Nuclear Information System (INIS)

    Moszczynski, A.S.

    2001-12-01

    TOSCA package has been used to simulate some effects observed recently in heavily irradiated silicon detectors. In particular, unexpected possibility of α-particle registration at p+ contact has been explained without presented elsewhere assumption that there was p-n junction of unknown origin beneath p+ layer. Performed simulations showed that assumption on relaxation-like character of irradiated silicon material is also not necessary to explain such effects like low-voltage capacitance peak in reverse bias and negative capacitance in forward bias. (author)

  16. Heavy doping effects in high efficiency silicon solar cells

    Science.gov (United States)

    Lindholm, F. A.; Neugroschel, A.

    1986-01-01

    The temperature dependence of the emitter saturation current for bipolar devices was studied by varying the surface recombination velocity at the emitter surface. From this dependence, the value was derived for bandgap narrowing that is in better agreement with other determinations that were obtained from the temperature dependence measure on devices with ohmic contacts. Results of the first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer were reported. The value was obtained by a high-frequency conductance method recently developed and used for doped Si. Experimental evidence is presented for significantly greater charge storage in highly excited silicon near room temperature than conventional theory would predict. These data are compared with various data for delta E sub G in heavily doped silicon.

  17. Buried oxide layer in silicon

    Science.gov (United States)

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  18. Dielectric properties of DNA oligonucleotides on the surface of silicon nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Bagraev, N. T., E-mail: bagraev@mail.ioffe.ru [St. Petersburg Polytechnic University (Russian Federation); Chernev, A. L. [Russian Academy of Sciences, St. Petersburg Academic University—Nanotechnology Research and Education Center (Russian Federation); Klyachkin, L. E. [St. Petersburg Polytechnic University (Russian Federation); Malyarenko, A. M. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Emel’yanov, A. K.; Dubina, M. V. [Russian Academy of Sciences, St. Petersburg Academic University—Nanotechnology Research and Education Center (Russian Federation)

    2016-10-15

    Planar silicon nanostructures that are formed as a very narrow silicon quantum well confined by δ barriers heavily doped with boron are used to study the dielectric properties of DNA oligonucleotides deposited onto the surface of the nanostructures. The capacitance characteristics of the silicon nanostructures with oligonucleotides deposited onto their surface are determined by recording the local tunneling current–voltage characteristics by means of scanning tunneling microscopy. The results show the possibility of identifying the local dielectric properties of DNA oligonucleotide segments consisting of repeating G–C pairs. These properties apparently give grounds to correlate the segments with polymer molecules exhibiting the properties of multiferroics.

  19. Influence of post-hydrogenation upon electrical, optical and structural properties of hydrogen-less sputter-deposited amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Gerke, S., E-mail: sebastian.gerke@uni-konstanz.de [Department of Physics, University of Konstanz, Konstanz, 78457 (Germany); Becker, H.-W.; Rogalla, D. [RUBION — Central Unit for Ion Beams and Radioisotopes, University of Bochum, Bochum, 44780 (Germany); Singer, F.; Brinkmann, N.; Fritz, S.; Hammud, A.; Keller, P.; Skorka, D.; Sommer, D. [Department of Physics, University of Konstanz, Konstanz, 78457 (Germany); Weiß, C. [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg (Germany); Flege, S. [Department of Materials Science, TU Darmstadt, Darmstadt 64287 (Germany); Hahn, G. [Department of Physics, University of Konstanz, Konstanz, 78457 (Germany); Job, R. [Department of Electrical Engineering and Computer Science, Münster University of Applied Sciences, Steinfurt 48565 (Germany); Terheiden, B. [Department of Physics, University of Konstanz, Konstanz, 78457 (Germany)

    2016-01-01

    Amorphous silicon (a-Si) is common in the production of technical devices and can be deposited by several techniques. In this study intrinsic and doped, hydrogen-less amorphous silicon films are RF magnetron sputter deposited and post-hydrogenated in a remote hydrogen plasma reactor at a temperature of 370 °C. Secondary ion mass spectrometry of a boron doped (p) a-Si layer shows that the concentration of dopants in the sputtered layer becomes the same as present in the sputter-target. Improved surface passivation of phosphorous doped 5 Ω cm, FZ, (n) c-Si can be achieved by post-hydrogenation yielding a minority carrier lifetime of ~ 360 μs finding an optimum for ~ 40 nm thin films, deposited at 325 °C. This relatively low minority carrier lifetime indicates high disorder of the hydrogen-less sputter deposited amorphous network. Post-hydrogenation leads to a decrease of the number of localized states within the band gap. Optical band gaps (Taucs gab as well as E{sub 04}) can be determined to ~ 1.88 eV after post-hydrogenation. High resolution transmission electron microscopy and optical Raman investigations show that the sputtered layers are amorphous and stay like this during post-hydrogenation. As a consequence of the missing hydrogen during deposition, sputtered a-Si forms a rough surface compared to CVD a-Si. Atomic force microscopy points out that the roughness decreases by up to 25% during post-hydrogenation. Nuclear resonant reaction analysis permits the investigation of hydrogen depth profiles and allows determining the diffusion coefficients of several post-hydrogenated samples from of a model developed within this work. A dependency of diffusion coefficients on the duration of post-hydrogenation indicates trapping diffusion as the main diffusion mechanism. Additional Fourier transform infrared spectroscopy measurements show that hardly any interstitial hydrogen exists in the post-hydrogenated a-Si layers. The results of this study open the way for

  20. Silicon: electrochemistry and luminescence

    NARCIS (Netherlands)

    Kooij, Ernst Stefan

    1997-01-01

    The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible

  1. NuSTAR observations of heavily obscured quasars at z ~ 0.5

    DEFF Research Database (Denmark)

    Lansbury, G. B.; Alexander, D. M.; Del Moro, A.

    2014-01-01

    We present NuSTAR hard X-ray observations of three Type 2 quasars at z ≈ 0.4-0.5, optically selected from the Sloan Digital Sky Survey. Although the quasars show evidence for being heavily obscured, Compton-thick systems on the basis of the 2-10 keV to [O III] luminosity ratio and multiwavelength...

  2. Gemcitabine and capecitabine for heavily pre-treated metastatic colorectal cancer patients

    DEFF Research Database (Denmark)

    Spindler, Karen-Lise G; Pallisgaard, Niels; Andersen, Rikke F

    2014-01-01

    AIM: We investigated the efficacy and safety of capecitabine and gemcitabin (GemCap) in heavily pre-treated, therapy-resistant metastatic colorectal cancer (mCRC) patients and the clinical importance of cell-free DNA (cfDNA) measurement. PATIENTS AND METHODS: Patients' inclusion criteria included...

  3. AFM of metallic nano-particles and nano-structures in heavily irradiated NaCl

    NARCIS (Netherlands)

    Gaynutdinov, R; Vainshtein, DI; Hak, SJ; Tolstikhina, A; Den Hartog, HW

    2003-01-01

    AFM investigations are reported for heavily, electron irradiated NaCl crystals in ultra high vacuum (UHV) in the non-contact mode-with an UHV AFM/STM Omicron system. To avoid chemical reactions between the radiolytic Na and oxygen and water, the irradiated samples were cleaved and prepared for the

  4. Becoming a Heavily Tattooed Young Body: From a Bodily Experience to a Body Project

    Science.gov (United States)

    Ferreira, Vitor Sérgio

    2014-01-01

    Why some young people start to tattoo their bodies? And why some of them keep going on with this practice, until having all body tattooed? What doing so means to them? These are some of the questions that underlie a qualitative research project carried out in Portugal on heavily tattooed young people. In this article, the author discusses their…

  5. Dual Inhibition of EGFR and VEGF in Heavily Pretreated Patients with Metastatic Colorectal Cancer

    DEFF Research Database (Denmark)

    Larsen, Finn Ole; Markussen, Alice; Nielsen, Dorte

    2017-01-01

    : The combination of irinotecan, bevacizumab, and cetuximab/panitumumab is safe and shows a toxicity profile corresponding to what is expected from the agents alone. The results indicate that the combination in the 4th line may result in a high rate of disease control in heavily pretreated patients with metastatic...

  6. Silicon heterojunction transistor

    International Nuclear Information System (INIS)

    Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

    1979-01-01

    SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

  7. The chemistry of silicon

    CERN Document Server

    Rochow, E G; Emeléus, H J; Nyholm, Ronald

    1975-01-01

    Pergamon Texts in Organic Chemistry, Volume 9: The Chemistry of Silicon presents information essential in understanding the chemical properties of silicon. The book first covers the fundamental aspects of silicon, such as its nuclear, physical, and chemical properties. The text also details the history of silicon, its occurrence and distribution, and applications. Next, the selection enumerates the compounds and complexes of silicon, along with organosilicon compounds. The text will be of great interest to chemists and chemical engineers. Other researchers working on research study involving s

  8. Silicon Microspheres Photonics

    International Nuclear Information System (INIS)

    Serpenguzel, A.

    2008-01-01

    Electrophotonic integrated circuits (EPICs), or alternatively, optoelectronic integrated circuit (OEICs) are the natural evolution of the microelectronic integrated circuit (IC) with the addition of photonic capabilities. Traditionally, the IC industry has been based on group IV silicon, whereas the photonics industry on group III-V semiconductors. However, silicon based photonic microdevices have been making strands in siliconizing photonics. Silicon microspheres with their high quality factor whispering gallery modes (WGMs), are ideal candidates for wavelength division multiplexing (WDM) applications in the standard near-infrared communication bands. In this work, we will discuss the possibility of using silicon microspheres for photonics applications in the near-infrared

  9. Addition of sunitinib to cetuximab and irinotecan in patients with heavily pre-treated advanced colorectal cancer

    DEFF Research Database (Denmark)

    Qvortrup, Camilla; Jensen, Benny Vittrup; Jørgensen, Trine Lembrecht

    2010-01-01

    Results of continuous sunitinib, in combination with cetuximab and irinotecan every other week (SIC) for compassionate use in heavily pre-treated patients with mCRC are presented.......Results of continuous sunitinib, in combination with cetuximab and irinotecan every other week (SIC) for compassionate use in heavily pre-treated patients with mCRC are presented....

  10. Chiral silicon nanostructures

    International Nuclear Information System (INIS)

    Schubert, E.; Fahlteich, J.; Hoeche, Th.; Wagner, G.; Rauschenbach, B.

    2006-01-01

    Glancing angle ion beam assisted deposition is used for the growth of amorphous silicon nanospirals onto [0 0 1] silicon substrates in a temperature range from room temperature to 475 deg. C. The nanostructures are post-growth annealed in an argon atmosphere at various temperatures ranging from 400 deg. C to 800 deg. C. Recrystallization of silicon within the persisting nanospiral configuration is demonstrated for annealing temperatures above 800 deg. C. Transmission electron microscopy and Raman spectroscopy are used to characterize the silicon samples prior and after temperature treatment

  11. Silicon web process development

    Science.gov (United States)

    Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Skutch, M. E.; Driggers, J. M.; Hopkins, R. H.

    1981-01-01

    The silicon web process takes advantage of natural crystallographic stabilizing forces to grow long, thin single crystal ribbons directly from liquid silicon. The ribbon, or web, is formed by the solidification of a liquid film supported by surface tension between two silicon filaments, called dendrites, which border the edges of the growing strip. The ribbon can be propagated indefinitely by replenishing the liquid silicon as it is transformed to crystal. The dendritic web process has several advantages for achieving low cost, high efficiency solar cells. These advantages are discussed.

  12. Silicone rubbers for dielectric elastomers with improved dielectric and mechanical properties as a result of substituting silica with titanium dioxide

    DEFF Research Database (Denmark)

    Yu, Liyun; Skov, Anne Ladegaard

    2016-01-01

    One prominent method of modifying the properties of dielectric elastomers (DEs) is by adding suitable metal oxide fillers. However, almost all commercially available silicone elastomers are already heavily filled with silica to reinforce the otherwise rather weak silicone network and the resulting...... and dynamic viscosity. Filled silicone elastomers with high loadings of nano-sized titanium dioxide (TiO2) particles were also studied. The best overall performing formulation had 35 wt.% TiO2 nanoparticles in the POWERSIL® XLR LSR, where the excellent ensemble of relative dielectric permittivity of 4.9 at 0...

  13. Periodically poled silicon

    Science.gov (United States)

    Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

    2010-02-01

    Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

  14. Nonlinear silicon photonics

    Science.gov (United States)

    Tsia, Kevin K.; Jalali, Bahram

    2010-05-01

    An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

  15. Nonlinear silicon photonics

    Science.gov (United States)

    Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

    2017-09-01

    Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

  16. Nice Guys Finish Last: Are People with Higher Tax Morale Taxed more Heavily?

    OpenAIRE

    Philipp Doerrenberg; Denvil Duncan; Clemens Fuest; Andreas Peichl

    2012-01-01

    This paper is the first to provide evidence of efficient taxation of groups with heterogeneous levels of 'tax morale'. We set up an optimal income tax model where high tax morale implies a high subjective cost of evading taxes. The model predicts that 'nice guys finish last': groups with higher tax morale will be taxed more heavily, simply because taxing them is less costly. Based on unique cross-country micro data and an IV approach to rule out reverse causality, we find empirical support fo...

  17. High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

    International Nuclear Information System (INIS)

    Tu, Nguyen Thanh; Hai, Pham Nam; Anh, Le Duc; Tanaka, Masaaki

    2016-01-01

    We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga_1_−_x,Fe_x)Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

  18. In situ observation of triple junction motion during recovery of heavily deformed aluminum

    DEFF Research Database (Denmark)

    Yu, Tianbo; Hughes, Darcy A.; Hansen, Niels

    2015-01-01

    -junctions are pinned by deformation-induced interconnecting and lamellar boundaries, which slow down the recovery process and lead to a stop-go migration pattern. This pinning mechanism stabilizes the deformation microstructure, i.e. the structure is stabilized by balancing the driving and pinning forces controlling......Microstructural evolution during in situ annealing of heavily cold-rolled aluminum has been studied by transmission electron microscopy, confirming that an important recovery mechanism is migration of triple junctions formed by three lamellar boundaries (Y-junctions). The migrating Y...

  19. AFM of metallic nano-particles and nano-structures in heavily irradiated NaCl

    OpenAIRE

    Gaynutdinov, R; Vainshtein, DI; Hak, SJ; Tolstikhina, A; Den Hartog, HW

    2003-01-01

    AFM investigations are reported for heavily, electron irradiated NaCl crystals in ultra high vacuum (UHV) in the non-contact mode-with an UHV AFM/STM Omicron system. To avoid chemical reactions between the radiolytic Na and oxygen and water, the irradiated samples were cleaved and prepared for the experiments in UHV At the surface of freshly cleaved samples, we have observed sodium nano-precipitates with shapes, which depend on the irradiation dose and the volume fraction of the radiolytic Na...

  20. High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

    Energy Technology Data Exchange (ETDEWEB)

    Tu, Nguyen Thanh [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physics, Ho Chi Minh City University of Pedagogy, 280, An Duong Vuong Street, District 5, Ho Chi Minh City 748242 (Viet Nam); Hai, Pham Nam [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Anh, Le Duc [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2016-05-09

    We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

  1. An X-ray wave theory for heavily distorted crystals. 1

    International Nuclear Information System (INIS)

    Ohkawa, T.; Hashimoto, H.

    1985-01-01

    An X-ray diffraction theory is developed of monochromatic waves having spherical wave front, which is applicable to an interpretation of divergent X-ray diffraction images of crystals containing arbitral types of strain field. The theory is divided into two parts. In part I, Takagi's theory is expanded by introducing amplitude and phase correction functions and a new improved representation for the X-ray diffraction theory is given. In part II dispersion surfaces in heavily distorted crystals are discussed, and in the discussion the resonance shift functions are introduced. These formulations can lead to a complete understanding of the extinction phenomena. (author)

  2. Quantitative Microstructural Characterization of Thick Aluminum Plates Heavily Deformed Using Equal Channel Angular Extrusion

    DEFF Research Database (Denmark)

    Mishin, Oleg; Segal, V.M.; Ferrasse, S.

    2012-01-01

    A detailed quantitative analysis of the microstructure has been performed in three orthogonal planes of 15-mm-thick aluminum plates heavily deformed via two equal channel angular extrusion (ECAE) routes. One route was a conventional route A with no rotation between passes. Another route involved...... sequential 90 deg rotations about the normal direction (ND) between passes. The microstructure in the center of these plates, and especially the extent of microstructural heterogeneity, has been characterized quantitatively and compared with that in bar samples extruded via either route A or route Bc with 90...... Bc. © The Minerals, Metals & Materials Society and ASM International 2012...

  3. Effect of internal gettering of iron on electrical characteristics of devices

    International Nuclear Information System (INIS)

    Talvitie, H.; Haarahiltunen, A.; Savin, H.; Yli-Koski, M.; Asghar, M.I.; Sinkkonen, J.

    2009-01-01

    Different types of gettering treatments were applied to a real device process to evaluate their ability to remove iron contamination from the device layer and improve the electrical characteristics of the devices. NMOS and PMOS transistors and other test structures were manufactured on boron doped, both iron contaminated and uncontaminated Cz silicon wafers with or without gettering treatment. Gettering treatments, which were designed to induce sufficient iron precipitate nucleation in the bulk to ensure iron precipitation, were inserted in the fabrication process after the last high temperature treatment in which the iron solubility was higher than the contamination level. The electrical characteristics of the devices, such as leakage currents, were measured. The applied gettering treatments were found to be inefficient to improve the device performance, possibly due to stronger gettering to heavily doped, ion implantation damaged device layer.

  4. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  5. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed; Rubin, Andrew; Refaat, Mohamed; Sedky, Sherif; Abdo, Mohammad

    2014-01-01

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  6. Electrical property studies of neutron-transmutation-doped silicon

    International Nuclear Information System (INIS)

    Cleland, J.W.; Fleming, P.H.; Westbrook, R.D.; Wood, R.F.; Young, R.T.

    1978-01-01

    Results of studies of electrical properties of neutron-transmutation-doped (NTD) silicon are presented. Annealing requirements to remove lattice damage were obtained. The electrical role of clustered oxygen and defect-oxygen complex was investigated. An NTD epitaxial layer on a heavily doped n- or p- type substrate can be produced. There is no evident interaction between lithium introduced by diffusion and phosphorous 31 introduced by irradiation. There may be some type of pairing reaction between lithium 7 introduced by boron 10 fission and any remaining boron

  7. Electrically tunable solid-state silicon nanopore ion filter

    Directory of Open Access Journals (Sweden)

    Gracheva Maria

    2006-01-01

    Full Text Available AbstractWe show that a nanopore in a silicon membrane connected to a voltage source can be used as an electrically tunable ion filter. By applying a voltage between the heavily doped semiconductor and the electrolyte, it is possible to invert the ion population inside the nanopore and vary the conductance for both cations and anions in order to achieve selective conduction of ions even in the presence of significant surface charges in the membrane. Our model based on the solution of the Poisson equation and linear transport theory indicates that in narrow nanopores substantial gain can be achieved by controlling electrically the width of the charge double layer.

  8. Marine reserves and reproductive biomass: a case study of a heavily targeted reef fish.

    Directory of Open Access Journals (Sweden)

    Brett M Taylor

    Full Text Available Recruitment overfishing (the reduction of a spawning stock past a point at which the stock can no longer replenish itself is a common problem which can lead to a rapid and irreversible fishery collapse. Averting this disaster requires maintaining a sufficient spawning population to buffer stochastic fluctuations in recruitment of heavily harvested stocks. Optimal strategies for managing spawner biomass are well developed for temperate systems, yet remain uncertain for tropical fisheries, where the danger of collapse from recruitment overfishing looms largest. In this study, we explored empirically and through modeling, the role of marine reserves in maximizing spawner biomass of a heavily exploited reef fish, Lethrinus harak around Guam, Micronesia. On average, spawner biomass was 16 times higher inside the reserves compared with adjacent fished sites. Adult density and habitat-specific mean fish size were also significantly greater. We used these data in an age-structured population model to explore the effect of several management scenarios on L. harak demography. Under minimum-size limits, unlimited extraction and all rotational-closure scenarios, the model predicts that preferential mortality of larger and older fish prompt dramatic declines in spawner biomass and the proportion of male fish, as well as considerable declines in total abundance. For rotational closures this occurred because of the mismatch between the scales of recovery and extraction. Our results highlight how alternative management scenarios fall short in comparison to marine reserves in preserving reproductively viable fish populations on coral reefs.

  9. Cytogenetic abnormalities of the descendants of permanent residents of heavily contaminated East Kazakhstan.

    Science.gov (United States)

    Chaizhunusova, Nailya; Madiyeva, Madina; Tanaka, Kimio; Hoshi, Masaharu; Kawano, Noriyuki; Noso, Yoshihiro; Takeichi, Nobuo; Rakhypbekov, Tolebay; Urazalina, Nailya; Dovgal, Galina; Rymbaeva, Tamara; Tokanova, Sholpan; Beisengazina, Meruert; Kembayeva, Kulypash; Inoue, Ken

    2017-11-01

    More than 400 nuclear explosion tests were conducted at the Semipalatinsk Nuclear Test Site (SNTS) and significant radioactive substances were released. The long-term consequences of the activities at the SNTS and the appearance of any hereditary effects remain insufficiently studied about 25 years after the test site was closed. The population living in villages near the SNTS are considered to have been heavily exposed to external and internal radiation. This study aims to perform an assessment and comprehensive cytogenetic analysis of the inhabitants living near the SNTS, and their first-(F1) and second-(F2) generation children. Residents of the East Kazakhstan region living in the area covered by the former SNTS were included in the study. To evaluate the hereditary effects of nuclear testing, comprehensive chromosome analyses were performed in lymphocytes using conventional Giemsa and fluorescent in situ hybridization methods in 115 F1 and F2 descendants in the villages of Dolon and Sarzhal, which were heavily contaminated. The parents of the subjects had permanently lived in the villages. A higher number of stable-type chromosome aberrations such as translocations was found in these residents than in 80 residents of the control area, Kokpecty, which indicates the possibility that radiation had biological effects on the exposed subjects.

  10. Long-Term Stability of Oxide Nanowire Sensors via Heavily Doped Oxide Contact.

    Science.gov (United States)

    Zeng, Hao; Takahashi, Tsunaki; Kanai, Masaki; Zhang, Guozhu; He, Yong; Nagashima, Kazuki; Yanagida, Takeshi

    2017-12-22

    Long-term stability of a chemical sensor is an essential quality for long-term collection of data related to exhaled breath, environmental air, and other sources in the Internet of things (IoT) era. Although an oxide nanowire sensor has shown great potential as a chemical sensor, the long-term stability of sensitivity has not been realized yet due to electrical degradation under harsh sensing conditions. Here, we report a rational concept to accomplish long-term electrical stability of metal oxide nanowire sensors via introduction of a heavily doped metal oxide contact layer. Antimony-doped SnO 2 (ATO) contacts on SnO 2 nanowires show much more stable and lower electrical contact resistance than conventional Ti contacts for high temperature (200 °C) conditions, which are required to operate chemical sensors. The stable and low contact resistance of ATO was confirmed for at least 1960 h under 200 °C in open air. This heavily doped oxide contact enables us to realize the long-term stability of SnO 2 nanowire sensors while maintaining the sensitivity for both NO 2 gas and light (photo) detections. The applicability of our method is confirmed for sensors on a flexible polyethylene naphthalate (PEN) substrate. Since the proposed fundamental concept can be applied to various oxide nanostructures, it will give a foundation for designing long-term stable oxide nanomaterial-based IoT sensors.

  11. Yield strength of a heavily drawn Cu-20% Nb filamentary microcomposite

    International Nuclear Information System (INIS)

    Hong, S.I.

    1998-01-01

    It has been well documented that heavily-drawn, copper-niobium microcomposites possess high strength and high conductivity. Since niobium has little solubility in copper, the conductivity of the copper is not strongly affected by the addition of niobium. Following extensive mechanical deformation of Cu-Nb, niobium dendrites transform into fine niobium ribbons as a result of the niobium texture upon drawing. This nanostructure contributes to the ultrahigh strength of Cu-Nb microcomposites. The strength of heavily deformed Cu-Nb exceeds that predicted by the rule-of-mixtures (ROM), and a fundamental understanding of the strengthening mechanisms involved has been the subject of much discussion. Spitzig and his coworkers suggests a barrier strengthening model while Funkenbusch and Courtney believe that stored dislocations have a role in substructural hardening. Hangen and Raabe recently proposed an analytical model for the calculation of the yield strength of Cu-Nb microcomposite. The model of Hangen and Raabe and that of Spitzig and his coworkers have a great deal of resemblance since both models attribute the strength to the difficulty of propagating plastic flow through the interface. The purpose of this study was to enhance the understanding of the strengthening mechanisms associated with Cu-Nb microcomposites by examining the previous studies on mechanical and microstructural stability of Cu-based microcomposites

  12. Sharp boron spikes in silicon grown at reduced and atmospheric pressure by fast-gas-switching CVD

    NARCIS (Netherlands)

    Vink, A.T.; Roksnoer, P.J.; Maes, J.W.F.M.; Vriezema, C.J.; IJzendoorn, van L.J.; Zalm, P.C.

    1990-01-01

    Boron doping spikes in Si were grown by fast-gas-switching CVD at 800 and 850°C using Si2H6 and B2H6 in 0.03, 0.1 and 1 atm H2 as the carrier gas. The B2H6 doping gas was added for 2 s by two methods, namely during growth or as a flush while the Si2H6 flow was interrupted. High-resolution SIMS

  13. Process for making silicon

    Science.gov (United States)

    Levin, Harry (Inventor)

    1987-01-01

    A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

  14. Hydrogen in amorphous silicon

    International Nuclear Information System (INIS)

    Peercy, P.S.

    1980-01-01

    The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH 1 ) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon

  15. Transformational silicon electronics

    KAUST Repository

    Rojas, Jhonathan Prieto

    2014-02-25

    In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

  16. The effect of oxidation on physical properties of porous silicon layers for optical applications

    Energy Technology Data Exchange (ETDEWEB)

    Pirasteh, Parasteh [Laboratoire d' Optronique, CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT Tecnhopole Anticipa, 6 rue de Kerampont, BP 447, 22305 Lannion Cedex (France); Charrier, Joel [Laboratoire d' Optronique, CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT Tecnhopole Anticipa, 6 rue de Kerampont, BP 447, 22305 Lannion Cedex (France)]. E-mail: joel.charrier@univ-rennes1.fr; Soltani, Ali [Institut d' Electronique, de Microemectronique et de Nanotechnologie, CNRS-UMR 8520, Cite Scientifique Avenue Poincare, BP 69, 59652 Villeneuve d' Ascq Cedex (France); Haesaert, Severine [Laboratoire d' Optronique, CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT Tecnhopole Anticipa, 6 rue de Kerampont, BP 447, 22305 Lannion Cedex (France); Haji, Lazhar [Laboratoire d' Optronique, CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT Tecnhopole Anticipa, 6 rue de Kerampont, BP 447, 22305 Lannion Cedex (France); Godon, Christine [Laboratoire de Physique Crystalline, Institut des Materiaux Jean Rouxel, 44322 Nantes Cedex 3 (France); Errien, Nicolas [Laboratoire de Physique Crystalline, Institut des Materiaux Jean Rouxel, 44322 Nantes Cedex 3 (France)

    2006-12-15

    In order to understand the optical loss mechanisms in porous silicon based waveguides, structural and optical studies have been performed. Scanning and transmission electron microscopic observations of porous silicon layers are obtained before and after an oxidation process at high temperature in wet O{sub 2}. Pore size and shape of heavily p-type doped Si wafers are estimated and correlated to the optical properties of the material before and after oxidation. The refractive index was measured and compared to that determined by the Bruggeman model.

  17. Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

    KAUST Repository

    Bahabry, R. R.; Gumus, A.; Kutbee, A. T.; Wehbe, N.; Ahmed, S. M.; Ghoneim, M. T.; Lee, K. -T.; Rogers, J. A.; Hussain, M. M.

    2016-01-01

    We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.

  18. Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

    KAUST Repository

    Bahabry, R. R.

    2016-11-30

    We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.

  19. Silicon micromachined vibrating gyroscopes

    Science.gov (United States)

    Voss, Ralf

    1997-09-01

    This work gives an overview of silicon micromachined vibrating gyroscopes. Market perspectives and fields of application are pointed out. The advantage of using silicon micromachining is discussed and estimations of the desired performance, especially for automobiles are given. The general principle of vibrating gyroscopes is explained. Vibrating silicon gyroscopes can be divided into seven classes. for each class the characteristic principle is presented and examples are given. Finally a specific sensor, based on a tuning fork for automotive applications with a sensitivity of 250(mu) V/degrees is described in detail.

  20. Porous silicon gettering

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Menna, P.; Pitts, J.R. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    The authors have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. They found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. The authors used metallurgical-grade Si (MG-Si) prepared by directional solidification casing as the starting material. They propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

  1. Silicon etch process

    International Nuclear Information System (INIS)

    Day, D.J.; White, J.C.

    1984-01-01

    A silicon etch process wherein an area of silicon crystal surface is passivated by radiation damage and non-planar structure produced by subsequent anisotropic etching. The surface may be passivated by exposure to an energetic particle flux - for example an ion beam from an arsenic, boron, phosphorus, silicon or hydrogen source, or an electron beam. Radiation damage may be used for pattern definition and/or as an etch stop. Ethylenediamine pyrocatechol or aqueous potassium hydroxide anisotropic etchants may be used. The radiation damage may be removed after etching by thermal annealing. (author)

  2. Silicon integrated circuit process

    International Nuclear Information System (INIS)

    Lee, Jong Duck

    1985-12-01

    This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

  3. Silicon integrated circuit process

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jong Duck

    1985-12-15

    This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

  4. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.; Peters, Craig; Brongersma, Mark; Cui, Yi; McGehee, Mike

    2010-01-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  5. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.

    2010-06-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  6. Radiation damage study for silicon calorimetry: Summary of first year's activity

    International Nuclear Information System (INIS)

    Russ, J.S.

    1988-01-01

    In the first contract year of this activity at Carnegie-Mellon we have had two major objectives. These were to devise and test a non-intrusive means to measure the energy and spatial profiles of the neutrons generated in a hadronic cascade at high energy; and to study the calibration systematics of silicon diode detectors as a prelude to their evaluation for SSC calorimetry. These objectives have been carried out, as are described in this paper. In addition we have recoded the ORNL detector simulation program HETC to operate on a VAX and are working on the conversion of the low energy neutron transport program MORSE. These programs are used heavily at Oak Ridge (Gabriel and coworkers) for cascade studies. For silicon calorimetry one wants to have more control over the energy deposition routines, especially in MORSE. Unfortunately, MORSE is heavily-laden with machine code, and its conversion is going slowly. 11 refs., 5 figs

  7. Joining elements of silicon carbide

    International Nuclear Information System (INIS)

    Olson, B.A.

    1979-01-01

    A method of joining together at least two silicon carbide elements (e.g.in forming a heat exchanger) is described, comprising subjecting to sufficiently non-oxidizing atmosphere and sufficiently high temperature, material placed in space between the elements. The material consists of silicon carbide particles, carbon and/or a precursor of carbon, and silicon, such that it forms a joint joining together at least two silicon carbide elements. At least one of the elements may contain silicon. (author)

  8. Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

    International Nuclear Information System (INIS)

    Shuleiko, D V; Ilin, A S

    2016-01-01

    Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

  9. Advances in silicon nanophotonics

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Pu, Minhao

    Silicon has long been established as an ideal material for passive integrated optical circuitry due to its high refractive index, with corresponding strong optical confinement ability, and its low-cost CMOS-compatible manufacturability. However, the inversion symmetry of the silicon crystal lattice.......g. in high-bit-rate optical communication circuits and networks, it is vital that the nonlinear optical effects of silicon are being strongly enhanced. This can among others be achieved in photonic-crystal slow-light waveguides and in nano-engineered photonic-wires (Fig. 1). In this talk I shall present some...... recent advances in this direction. The efficient coupling of light between optical fibers and the planar silicon devices and circuits is of crucial importance. Both end-coupling (Fig. 1) and grating-coupling solutions will be discussed along with polarization issues. A new scheme for a hybrid III...

  10. Integrated silicon optoelectronics

    CERN Document Server

    Zimmermann, Horst

    2000-01-01

    'Integrated Silicon Optoelectronics'assembles optoelectronics and microelectronics The book concentrates on silicon as the major basis of modern semiconductor devices and circuits Starting from the basics of optical emission and absorption and from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included The book, furthermore, contains a review of the state of research on eagerly expected silicon light emitters In order to cover the topic of the book comprehensively, integrated waveguides, gratings, and optoelectronic power devices are included in addition Numerous elaborate illustrations promote an easy comprehension 'Integrated Silicon Optoelectronics'will be of value to engineers, physicists, and scientists in industry and at universities The book is also recommendable for graduate students speciali...

  11. Silicon microfabricated beam expander

    International Nuclear Information System (INIS)

    Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

    2015-01-01

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed

  12. Silicon microfabricated beam expander

    Science.gov (United States)

    Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

    2015-03-01

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  13. Silicon microfabricated beam expander

    Energy Technology Data Exchange (ETDEWEB)

    Othman, A., E-mail: aliman@ppinang.uitm.edu.my; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A. [Faculty of Electrical Engineering, Universiti Teknologi MARA Malaysia, 40450, Shah Alam, Selangor (Malaysia); Ain, M. F. [School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300,Nibong Tebal, Pulau Pinang (Malaysia)

    2015-03-30

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  14. Porous Silicon Nanowires

    Science.gov (United States)

    Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

    2011-01-01

    In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

  15. Structural coarsening during annealing of an aluminum plate heavily deformed using ECAE

    DEFF Research Database (Denmark)

    Mishin, Oleg V.; Zhang, Yubin; Godfrey, A.

    2015-01-01

    The microstructure and softening behaviour have been investigated in an aluminum plate heavily deformed by equal channel angular extrusion and subsequently annealed at 170 °C. It is found that at this temperature the microstructure evolves by coarsening with no apparent signs of recrystallization...... even after 2 h of annealing. Both coarsening and softening are rapid within first 10 minutes of annealing followed by a slower evolution with increasing annealing duration. Evidence of triple junction (TJ) motion during coarsening is obtained by inspecting the microstructure in one region using...... the electron backscatter diffraction technique both before and after annealing for 10 minutes. The fraction of fast-migrating TJs is found to strongly depend of the type of boundaries composing a junction. The greatest fraction of fast-migrating TJs is in the group, where all boundaries forming a junction...

  16. Anomalous transmission through heavily doped conducting polymer films with periodic subwavelength hole array

    Science.gov (United States)

    Matsui, Tatsunosuke; Vardeny, Z. Valy; Agrawal, Amit; Nahata, Ajay; Menon, Reghu

    2006-08-01

    We observed resonantly enhanced (or anomalous transmission) terahertz transmission through two-dimensional (2D) periodic arrays of subwavelength apertures with various periodicities fabricated on metallic organic conducting polymer films of polypyrrole heavily doped with PF 6 molecules [PPy(PF6)]. The anomalous transmission spectra are in good agreement with a model involving surface plasmon polariton excitations on the film surfaces. We also found that the resonantly enhanced transmission peaks are broader in the exotic metallic PPy(PF6) films compared to those formed in 2D aperture array in regular metallic films such as silver, indicating that the surface plasmon polaritons on the PPy(PF6) film surfaces have higher attenuation.

  17. Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source

    Energy Technology Data Exchange (ETDEWEB)

    Daniltsev, V. M.; Demidov, E. V.; Drozdov, M. N.; Drozdov, Yu. N., E-mail: drozdyu@ipmras.ru; Kraev, S. A.; Surovegina, E. A.; Shashkin, V. I.; Yunin, P. A. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2016-11-15

    The capabilities of GaAs epitaxial layers extremely heavily doped with tellurium by metal-organic vapor-phase epitaxy using diisopropyl telluride as a source are studied. It is shown that tellurium incorporation into GaAs occurs to an atomic concentration of 10{sup 21} cm{sup –3} without appreciable diffusion and segregation effects. Good carrier concentrations (2 × 10{sup 19} cm{sup –3}) and specific contact resistances of non-alloyed ohmic contacts (1.7 × 10{sup –6} Ω cm{sup 2}) give grounds to use such layers to create non-alloyed ohmic contacts in electronic devices. A sharp decrease in the electrical activity of Te atoms, a decrease in the electron mobility, and an increase in the contact resistance at atomic concentrations above 2 × 10{sup 20} cm{sup –3} are detected.

  18. Defects in heavily phosphorus-doped Si epitaxial films probed by monoenergetic positron beams

    International Nuclear Information System (INIS)

    Uedono, Akira; Tanigawa, Shoichiro; Suzuki, Ryoichi; Ohgaki, Hideaki; Mikado, Tomohisa.

    1994-01-01

    Vacancy-type defects in heavily phosphorus-doped Si epitaxial films were probed by monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured for the epitaxial films grown on the Si substrates by plasma chemical vapor deposition. For the as-deposited film, divacancy-phosphorus complexes were found with high concentration. After 600degC annealing, vacancy clusters were formed near the Si/Si interface, while no drastic change in the depth distribution of the divacancy-phosphorus complexes was observed. By 900degC annealing, the vacancy clusters were annealed out; however, the average number of phosphorus atoms coupled with divacancies increased. The relationship between the vacancy-type defects probed by the positron annihilation technique and the carrier concentration was confirmed. (author)

  19. Defects in heavily phosphorus-doped Si epitaxial films probed by monoenergetic positron beams

    Energy Technology Data Exchange (ETDEWEB)

    Uedono, Akira; Tanigawa, Shoichiro [Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science; Suzuki, Ryoichi; Ohgaki, Hideaki; Mikado, Tomohisa

    1994-11-01

    Vacancy-type defects in heavily phosphorus-doped Si epitaxial films were probed by monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured for the epitaxial films grown on the Si substrates by plasma chemical vapor deposition. For the as-deposited film, divacancy-phosphorus complexes were found with high concentration. After 600degC annealing, vacancy clusters were formed near the Si/Si interface, while no drastic change in the depth distribution of the divacancy-phosphorus complexes was observed. By 900degC annealing, the vacancy clusters were annealed out; however, the average number of phosphorus atoms coupled with divacancies increased. The relationship between the vacancy-type defects probed by the positron annihilation technique and the carrier concentration was confirmed. (author).

  20. Launch prices for new pharmaceuticals in the heavily regulated and subsidized Spanish market, 1995-2007.

    Science.gov (United States)

    Puig-Junoy, Jaume; López-Valcárcel, Beatriz González

    2014-06-01

    This paper provides empirical evidence on the explanatory factors affecting introductory prices of new pharmaceuticals in a heavily regulated and highly subsidized market. We collect a data set consisting of all new chemical entities launched in Spain between 1997 and 2005, and model launch prices following an extended version of previous economic models. We found that, unlike in the US and Sweden, therapeutically "innovative" products are not overpriced relative to "imitative" ones after having controlled for other factors. Price setting is mainly used as a mechanism to adjust for inflation independently of the degree of innovation. The drugs that enter through the centralized EMA approval procedure are overpriced, which may be a consequence of market globalization and international price setting. Copyright © 2014 Elsevier Ireland Ltd. All rights reserved.