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Sample records for heavily boron-doped silicon

  1. Superconductivity in heavily boron-doped silicon carbide

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    Markus Kriener, Takahiro Muranaka, Junya Kato, Zhi-An Ren, Jun Akimitsu and Yoshiteru Maeno

    2008-01-01

    Full Text Available The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped silicon carbide. The sample used for that study consisted of cubic and hexagonal SiC phase fractions and hence this led to the question which of them participated in the superconductivity. Here we studied a hexagonal SiC sample, free from cubic SiC phase by means of x-ray diffraction, resistivity, and ac susceptibility.

  2. Enhanced diffusion of oxygen depending on Fermi level position in heavily boron-doped silicon

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    Torigoe, Kazuhisa, E-mail: ktorigoe@sumcosi.com; Fujise, Jun; Ono, Toshiaki [Technology Division, Advanced Evaluation and Technology Development Department, SUMCO Corporation, 1-52 Kubara, Yamashiro-cho, Imari, Saga 849-4256 (Japan); Nakamura, Kozo [Department of Communication Engineering, Okayama Prefectural University, 111 Kuboki, Soja, Okayama 719-1197 (Japan)

    2014-11-21

    The enhanced diffusivity of oxygen in heavily boron doped silicon was obtained by analyzing oxygen out-diffusion profile changes found at the interface between a lightly boron-doped silicon epitaxial layer and a heavily boron-doped silicon substrate by secondary ion mass spectrometry. It was found that the diffusivity is proportional to the square root of boron concentration in the range of 10{sup 18 }cm{sup −3}–10{sup 19 }cm{sup −3} at temperatures from 750 °C to 950 °C. The model based on the diffusion of oxygen dimers in double positive charge state could explain the enhanced diffusion. We have concluded that oxygen diffusion enhanced in heavily boron-doped silicon is attributed to oxygen dimers ionized depending on Fermi level position.

  3. Influence of Boron doping on micro crystalline silicon growth

    Institute of Scientific and Technical Information of China (English)

    Li Xin-Li; Wang Guo; Chen Yong-Sheng; Yang Shi-E; Gu Jin-Hua; Lu Jing-Xiao; Gao Xiao-Yong; Li Rui; Jiao Yue-Chao; Gao Hai-Bo

    2011-01-01

    Microcrystalline silicon (Ftc-Si:H) thin films with and without boron doping are deposited using the radio-frequency plasmsrenhanced chemical vapour deposition method. The surface roughness evolutions of the silicon thin films are investigated using ex situ spectroscopic ellipsometry and an atomic force microscope. It is shown that the growth exponent β and the roughness exponent a are about 0.369 and 0.95 for the undoped thin film,respectively. Whereas,for the boron-doped pc-Si:H thin film,βincreases to 0.534 and a decreases to 0.46 due to the shadowing effect.

  4. Femtosecond Laser Crystallization of Boron-doped Amorphous Hydrogenated Silicon Films

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    P.D. Rybalko

    2016-10-01

    Full Text Available Crystallization of amorphous hydrogenated silicon films with femtosecond laser pulses is one of the promising ways to produce nanocrystalline silicon for photovoltaics. The structure of laser treated films is the most important factor determining materials' electric and photoelectric properties. In this work we investigated the effect of femtosecond laser irradiation of boron doped amorphous hydrogenated silicon films with different fluences on crystalline volume fraction and electrical properties of this material. A sharp increase of conductivity and essential decrease of activation energy of conductivity temperature dependences accompany the crystallization process. The results obtained are explained by increase of boron doping efficiency in crystalline phase of modified silicon film.

  5. Cathodoluminescence measurements on heavily boron doped homoepitaxial diamond films and their interfaces with their Ib substrates

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    Baron, C.; Deneuville, A.; Wade, M.; Jomard, F.; Chevallier, J.

    2006-02-01

    Heavily boron doped 1.8 to 2.4 μm thick homoepitaxial diamond films with 1.5 × 1021 cm-3 [B] 1.75 × 1021 cm-3 have been deposited directly on their (100) Ib substrates at 830 °C. Their cathodoluminescence spectra probe the controlled thicknesses from 0.28 to 2.8 μm, therefore the bulk of the films as well as their interfaces with their substrates. The bulk of these films exhibit a band with shoulders ascribed to BETO (5.036 eV), FETO (5.094 eV) and BENP (5.184 eV) excitons whose energies are downward shifted by about 180 meV in comparison with monocrystalline diamond with low [B] FETO and BENP from interfacial layers with low [B]. From their BETO to FETO ratio, their concentration of boron on isolated substitutional sites is significantly lower than their total low [B] content measured by SIMS. A tentative model is proposed to explain the characteristics of these 40 to 160 quasihomogeneous interfacial layers.

  6. Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films

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    T. Yokoya, T. Nakamura, T. Matushita, T. Muro, H. Okazaki, M. Arita, K. Shimada, H. Namatame, M. Taniguchi, Y. Takano, M. Nagao, T. Takenouchi, H. Kawarada and T. Oguchi

    2006-01-01

    Full Text Available We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES of microwave plasma-assisted chemical vapor deposition diamond films with different B concentrations in order to study the origin of the metallic behavior of superconducting diamond. SXARPES results clearly show valence band dispersions with a bandwidth of ~23 eV and with a top of the valence band at gamma point in the Brillouin zone, which are consistent with the calculated valence band dispersions of pure diamond. Boron concentration-dependent band dispersions near the Fermi level (EF exhibit a systematic shift of EF, indicating depopulation of electrons due to hole doping. These SXARPES results indicate that diamond bands retain for heavy boron doping and holes in the diamond band are responsible for the metallic states leading to superconductivity at low temperature. A high-resolution photoemission spectroscopy spectrum near EF of a heavily boron-doped diamond superconductor is also presented.

  7. Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

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    Achatz, Philipp

    2009-05-15

    During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n{sub c} for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers ({approx} 500 cm{sup -1}) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g{sub c}. The granularity also influences significantly the superconducting properties by introducing the superconducting gap {delta} in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the

  8. Raman scattering in heavily boron-doped single-crystal diamond

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    G. Faggio

    2011-09-01

    Full Text Available A series of boron-doped homoepitaxial diamond films grown by Microwave Plasma Enhanced Chemical Vapor Deposition at the University of Rome "Tor Vergata" have been investigated with Raman spectroscopy. As the boron content increases, we observed systematic modifications in the Raman spectra of single-crystal diamonds. A significant change in the lineshape of the first-order Raman peak as well as a wide and structured signal at lower wavenumbers appeared simultaneously in samples grown at higher boron content.

  9. Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

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    Behzad, Somayeh, E-mail: somayeh.behzad@gmail.co [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Moradian, Rostam [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Nano Science and Technology Research Center, Razi University, Kermanshah (Iran, Islamic Republic of); Computational Physical Science Research Laboratory, Department of Nano Science, Institute for Studies in Theoretical Physics and Mathematics (IPM), P.O. Box 19395-5531, Tehran (Iran, Islamic Republic of); Chegel, Raad [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of)

    2010-12-01

    The effects of boron doping on the structural and electronic properties of (6,0)-(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

  10. Copper diffusivity in boron-doped silicon wafer measured by dynamic secondary ion mass spectrometry

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    Koh, Songfoo [S.E.H (M) Sdn. Bhd., Lot 2, Lorong Enggang 35, Ulu Klang FTZ, 54200 Selangor (Malaysia); You, Ahheng [Faculty of Engineering and Technology, Multimedia University, Jalan Ayer Keroh Lama, Bukit Beruang, 75450 Melaka (Malaysia); Tou, Teckyong, E-mail: tytou@mmu.edu.my [Faculty of Engineering, Multimedia Univesity, Jalan Multimedia, 63100 Cyberjaya (Malaysia)

    2013-03-20

    Highlights: ► Effective copper diffusivity in boron-doped silicon wafer was measured. ► Dynamic secondary ion mass spectrometry was used. ► Interstitial copper ions were first drifted to surface region and allowed to back-diffuse. ► Boron concentration largely influenced the effect copper diffusivity. -- Abstract: The effective copper diffusivity (D{sub eff}) in boron-doped silicon wafer was measured using a Dynamic Secondary Ion Mass Spectrometry (D-SIMS) that was incorporated with an out-drift technique. By this technique, positive interstitial copper ions (Cu{sub I}{sup +}) migrated to the surface region when a continuous charge of electrons showered on the oxidized silicon wafer, which was also bombarded by primary O{sub 2}{sup +} ions. The Cu{sub I}{sup +} ions at the surface region diffused back to the bulk when the electron showering stopped. The D-SIMS recorded the real-time distribution of Cu{sub I}{sup +} ions, generating depth profiles for in-diffusion of copper for silicon-wafer samples with different boron concentrations. These were curve-fitted using the standard diffusion expressions to obtain different D{sub eff} values, and compared with other measurement techniques.

  11. Radiation tolerance of boron doped dendritic web silicon solar cells

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    Rohatgi, A.

    1980-01-01

    The potential of dendritic web silicon for giving radiation hard solar cells is compared with the float zone silicon material. Solar cells with n(+)-p-P(+) structure and approximately 15% (AMl) efficiency were subjected to 1 MeV electron irradiation. Radiation tolerance of web cell efficiency was found to be at least as good as that of the float zone silicon cell. A study of the annealing behavior of radiation-induced defects via deep level transient spectroscopy revealed that E sub v + 0.31 eV defect, attributed to boron-oxygen-vacancy complex, is responsible for the reverse annealing of the irradiated cells in the temperature range of 150 to 350 C.

  12. Bare and boron-doped cubic silicon carbide nanowires for electrochemical detection of nitrite sensitively.

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    Yang, Tao; Zhang, Liqin; Hou, Xinmei; Chen, Junhong; Chou, Kuo-Chih

    2016-04-25

    Fabrication of eletrochemical sensors based on wide bandgap compound semiconductors has attracted increasing interest in recent years. Here we report for the first time electrochemical nitrite sensors based on cubic silicon carbide (SiC) nanowires (NWs) with smooth surface and boron-doped cubic SiC NWs with fin-like structure. Multiple techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS) were used to characterize SiC and boron-doped SiC NWs. As for the electrochemical behavior of both SiC NWs electrode, the cyclic voltammetric results show that both SiC electrodes exhibit wide potential window and excellent electrocatalytic activity toward nitrite oxidation. Differential pulse voltammetry (DPV) determination reveals that there exists a good linear relationship between the oxidation peak current and the concentration in the range of 50-15000 μmoL L(-1) (cubic SiC NWs) and 5-8000 μmoL L(-1) (B-doped cubic SiC NWs) with the detection limitation of 5 and 0.5 μmoL L(-1) respectively. Compared with previously reported results, both as-prepared nitrite sensors exhibit wider linear response range with comparable high sensitivity, high stability and reproducibility.

  13. Modeling and simulation of boron-doped nanocrystalline silicon carbide thin film by a field theory.

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    Xiong, Liming; Chen, Youping; Lee, James D

    2009-02-01

    This paper presents the application of a multiscale field theory in modeling and simulation of boron-doped nanocrystalline silicon carbide (B-SiC). The multiscale field theory was briefly introduced. Based on the field theory, numerical simulations show that intergranular glassy amorphous films (IGFs) and nano-sized pores exist in triple junctions of the grains for nanocrystalline B-SiC. Residual tensile stress in the SiC grains and compressive stress on the grain boundaries (GBs) were observed. Under tensile loading, it has been found that mechanical response of 5 wt% boron-SiC exhibits five characteristic regimes. Deformation mechanism at atomic scale has been revealed. Tensile strength and Young's modulus of nanocrystalline SiC were accurately reproduced.

  14. Reduction of Light-induced Degradation of Boron-doped Solar-grade Czochralski Silicon by Corona Charging

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    Boulfrad, Yacine; Lindroos, Jeanette; Inglese, Alessandro; Yli-Koski, Marko; Savin, Hele

    2013-01-01

    Abstract This study aims at the reduction of light-induced degradation of boron-doped solar-grade Czochralski silicon wafers by corona charging. The method consists of deposition of negative charges on both surface sides of wafer and keeping the wafer in dark for 24 hours to allow the diffusion of positively-charged interstitial copper towards the surfaces. This method proves to be useful to reduce or eliminate light-induced degradation caused by copper. The degradation was significantly redu...

  15. Modeling the Microstructure Curvature of Boron-Doped Silicon in Bulk Micromachined Accelerometer

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    Xiaoping He

    2013-01-01

    Full Text Available Microstructure curvature, or buckling, is observed in the micromachining of silicon sensors because of the doping of impurities for realizing certain electrical and mechanical processes. This behavior can be a key source of error in inertial sensors. Therefore, identifying the factors that influence the buckling value is important in designing MEMS devices. In this study, the curvature in the proof mass of an accelerometer is modeled as a multilayered solid model. Modeling is performed according to the characteristics of the solid diffusion mechanism in the bulk-dissolved wafer process (BDWP based on the self-stopped etch technique. Moreover, the proposed multilayered solid model is established as an equivalent composite structure formed by a group of thin layers that are glued together. Each layer has a different Young’s modulus value and each undergoes different volume shrinkage strain owing to boron doping in silicon. Observations of five groups of proof mass blocks of accelerometers suggest that the theoretical model is effective in determining the buckling value of a fabricated structure.

  16. Humid environment stability of low pressure chemical vapor deposited boron doped zinc oxide used as transparent electrodes in thin film silicon solar cells

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    Steinhauser, Jerome, E-mail: jerome.steinhauser@oerlikon.com [Institute of Microtechnology (IMT), University of Neuchatel, CH-2000 Neuchatel (Switzerland); Meyer, Stefan; Schwab, Marlene; Fay, Sylvie; Ballif, Christophe [Institute of Microtechnology (IMT), University of Neuchatel, CH-2000 Neuchatel (Switzerland); Kroll, U.; Borrello, D. [Oerlikon Solar-Lab, 2000 Neuchatel (Switzerland)

    2011-10-31

    The stability in humid environment of low pressure chemical vapor deposited boron doped zinc oxide (LPCVD ZnO:B) used as transparent conductive oxide in thin film silicon solar cells is investigated. Damp heat treatment (exposure to humid and hot atmosphere) induces a degradation of the electrical properties of unprotected LPCVD ZnO:B layers. By combining analyses of the electrical and optical properties of the films, we are able to attribute this behavior to an increase of electron grain boundary scattering. This is in contrast to the intragrain scattering mechanisms, which are not affected by damp heat exposure. The ZnO stability is enhanced for heavily doped films due to easier tunneling through potential barrier at grain boundaries.

  17. Effect of substrate temperature on the growth and properties of boron-doped microcrystalline silicon films

    Institute of Scientific and Technical Information of China (English)

    Lei Qing-Song; Wu Zhi-Meng; Geng Xin-Hua; Zhao Ying; Sun Jian; Xi Jian-Ping

    2006-01-01

    Highly conductive boron-doped hydrogenated microcrystalline silicon (μc-Si:H) films are prepared by very high frequency plasma enhanced chemical vapour deposition (VHF PECVD) at the substrate temperatures (Ts) ranging from 90℃ to 270℃. The effects of Ts on the growth and properties of the films are investigated. Results indicate that the growth rate, the electrical (dark conductivity, carrier concentration and Hall mobility) and structural (crystallinity and grain size) properties are all strongly dependent on Ts. As Ts increases, it is observed that 1) the growth rate initially increases and then arrives at a maximum value of 13.3 nm/min at Ts=210℃, 2) the crystalline volume fraction (Xc) and the grain size increase initially, then reach their maximum values at Ts = 140℃, and finally decrease, 3) the dark conductivity (σd),carrier concentration and Hall mobility have a similar dependence on Tg and arrive at their maximum values at Ts=190℃. In addition, it is also observed that at a lower substrate temperature Ts, a higher dopant concentration is required in order to obtain a maximum σd.

  18. Low-level boron doping and light-induced effects in amorphous silicon pin solar cells

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    Moeller, M.; Rauscher, B.; Kruehler, W.; Plaettner, R.; Pfleiderer, H.

    Amorphous silicon solar cells with the structure pin/ITO produced in the laboratory show an AM1 efficiency of up to 7.4 percent on 6 sq mm. The impact of doping the i-layer slightly with boron on the cell performance was studied together with its possible influence on the cell stability. Cells exposed to continuous AM1 illumination (up to 2000 hours) show a degradation of the efficiency. Differences in the bias-voltage during the deposition lead to significant differences in the stability whereas the influence of boron doping was not so prominent. The nu-tau-products for electrons and holes were shown to degrade differently through light-soaking for different doping-level. A further investigation was made by evaluating the frequency dependence of the capacitance via a new p i n junction model to obtain the density of states and the drift field in the i-layer for doping and light-soaking.

  19. Wet chemical treatment of boron doped emitters on n-type (1 0 0) c-Si prior to amorphous silicon passivation

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    Meddeb, H., E-mail: hosny.meddeb@gmail.com [KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Research and Technology Center of Energy, Photovoltaic Department, Borj-Cedria Science and Technology Park, BP 95, 2050 (Tunisia); University of Carthage, Faculty of Sciences of Bizerta (Tunisia); Bearda, T.; Recaman Payo, M.; Abdelwahab, I. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Abdulraheem, Y. [Electrical Engineering Department, College of Engineering & Petroleum, Kuwait University, P.O. Box 5969, 13060 Safat (Kuwait); Ezzaouia, H. [Research and Technology Center of Energy, Photovoltaic Department, Borj-Cedria Science and Technology Park, BP 95, 2050 (Tunisia); Gordon, I.; Szlufcik, J. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Poortmans, J. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Department of Electrical Engineering (ESAT), K.U. Leuven, 3001 Leuven (Belgium); Faculty of Sciences, University of Hasselt, Martelarenlaan 42, 3500 Hasselt (Belgium)

    2015-02-15

    Highlights: • The influence of the cleaning process using different HF-based cleaning on the amorphous silicon passivation of homojunction boron doped emitters is analyzed. • The effect of boron doping level on surface characteristics after wet chemical cleaning: For heavily doped surfaces, the reduction in contact angle was less pronounced, which proves that such surfaces are more resistant to oxide formation and remain hydrophobic for a longer time. In the case of low HF concentration, XPS measurements show higher oxygen concentrations for samples with higher doping level, probably due to the incomplete removal of the native oxide. • Higher effective lifetime is achieved at lower doping for all considered different chemical pre-treatments. • A post-deposition annealing improves the passivation level yielding emitter saturation currents determined by Auger recombination in the order of 70 fA/cm{sup 2} and below. • The dominance of Auger recombination over other type of B-induced defects on lifetime quality in the case of our p+ emitter. - Abstract: The influence of the cleaning process on the amorphous silicon passivation of homojunction emitters is investigated. A significant variation in the passivation quality following different cleaning sequences is not observed, even though differences in cleaning performance are evident. These results point out the effectiveness of our cleaning treatment and provide a hydrogen termination for intrinsic amorphous silicon passivation. A post-deposition treatment improves the passivation level yielding emitter saturation currents determined by Auger recombination in the order of 70 fA/cm{sup 2} and below.

  20. Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD

    Energy Technology Data Exchange (ETDEWEB)

    Pawbake, Amit [School of Energy Studies, Savitribai Phule Pune University, Pune 411 007 (India); Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Mayabadi, Azam; Waykar, Ravindra; Kulkarni, Rupali; Jadhavar, Ashok [School of Energy Studies, Savitribai Phule Pune University, Pune 411 007 (India); Waman, Vaishali [Modern College of Arts, Science and Commerce, Shivajinagar, Pune 411 005 (India); Parmar, Jayesh [Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Bhattacharyya, Somnath [Department of Metallurgical and Materials Engineering, IIT Madras, Chennai 600 036 (India); Ma, Yuan‐Ron [Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan (China); Devan, Rupesh; Pathan, Habib [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Jadkar, Sandesh, E-mail: sandesh@physics.unipune.ac.in [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India)

    2016-04-15

    Highlights: • Boron doped nc-3C-SiC films prepared by HW-CVD using SiH{sub 4}/CH{sub 4}/B{sub 2}H{sub 6}. • 3C-Si-C films have preferred orientation in (1 1 1) direction. • Introduction of boron into SiC matrix retard the crystallanity in the film structure. • Film large number of SiC nanocrystallites embedded in the a-Si matrix. • Band gap values, E{sub Tauc} and E{sub 04} (E{sub 04} > E{sub Tauc}) decreases with increase in B{sub 2}H{sub 6} flow rate. - Abstract: Boron doped nanocrystalline cubic silicon carbide (3C-SiC) films have been prepared by HW-CVD using silane (SiH{sub 4})/methane (CH{sub 4})/diborane (B{sub 2}H{sub 6}) gas mixture. The influence of boron doping on structural, optical, morphological and electrical properties have been investigated. The formation of 3C-SiC films have been confirmed by low angle XRD, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), Fourier transform infra-red (FTIR) spectroscopy and high resolution-transmission electron microscopy (HR-TEM) analysis whereas effective boron doping in nc-3C-SiC have been confirmed by conductivity, charge carrier activation energy, and Hall measurements. Raman spectroscopy and HR-TEM analysis revealed that introduction of boron into the SiC matrix retards the crystallanity in the film structure. The field emission scanning electron microscopy (FE-SEM) and non contact atomic force microscopy (NC-AFM) results signify that 3C-SiC film contain well resolved, large number of silicon carbide (SiC) nanocrystallites embedded in the a-Si matrix having rms surface roughness ∼1.64 nm. Hydrogen content in doped films are found smaller than that of un-doped films. Optical band gap values, E{sub Tauc} and E{sub 04} decreases with increase in B{sub 2}H{sub 6} flow rate.

  1. Highly conductive boron doped micro/nanocrystalline silicon thin films deposited by VHF-PECVD for solar cell applications

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    Juneja, Sucheta; Sudhakar, S., E-mail: sudhakars@nplindia.org; Gope, Jhuma; Lodhi, Kalpana; Sharma, Mansi; Kumar, Sushil

    2015-09-15

    Graphical abstract: AFM images of boron doped micro/nanocrystalline silicon films at different diborane gas flow. - Highlights: • High deposition rate of 10 Å/s was achieved for boron doped silicon films. • Wide range of optical band gap from 1.32 eV to 1.84 eV observed for the deposited films. - Abstract: Boron doped hydrogenated micro/nanocrystalline silicon (μc/nc-Si:H) thin films have been deposited by plasma enhanced chemical vapor deposition technique (PECVD) using silane (SiH{sub 4}) diluted in argon. Diborane (B{sub 2}H{sub 6}) was used as the dopant gas and deposition was carried out at substrate temperature of 200 °C. The diborane flow (F{sub B}) varied in the range 0.00–0.30. Here, we report the effects of B{sub 2}H{sub 6} doping on electronic, optical and structural properties of hydrogenated micro/nanocrystalline silicon films. The structural properties were analyzed by atomic force microscopy (AFM) and X-ray diffraction (XRD). The doped micro/nano crystalline silicon films presented a crystallographic orientation preferentially in the (1 1 1) and (2 2 0) plane. We resolve the deposition parameters that lead to the formation of p-type micro/nanocrystalline silicon thin films with very high value of conductivity and lower optical band gap. Correlations between structural and electrical properties were also studied. Based on temperature dependent conductivity measurements, it has been observed that the room temperature dark conductivity varies in the range 1.45 × 10{sup −4} Ω{sup −1} cm{sup −1} to 2.02 Ω{sup −1} cm{sup −1} for the B-doped films. Meanwhile, the corresponding value of activation energies decreased to 0.06 eV for the B-doped films, which indicates the doped μc/nc-Si films with high conductivity can be achieved and these films prove to be a very good candidate for application in amorphous and micro/nano crystalline silicon solar cells as a p-type window layer.

  2. Solar cells on low-resistivity boron-doped Czochralski-grown silicon with stabilized efficiencies of 20%

    Science.gov (United States)

    Lim, Bianca; Hermann, Sonja; Bothe, Karsten; Schmidt, Jan; Brendel, Rolf

    2008-10-01

    Recently, it was shown that the boron-oxygen complex responsible for the light-induced lifetime degradation in oxygen-rich boron-doped silicon can be permanently deactivated by illumination at elevated temperatures. Since the degradation is particularly harmful in low-resistivity Czochralski silicon (Cz-Si), we apply the deactivation procedure to a high-efficiency rear interdigitated single evaporation emitter wrap-through solar cell made on 1.4Ωcm B-doped Cz-Si. The energy conversion efficiency is thereby increased by more than 1% absolute compared to the degraded state to 20.3% on a designated area of 92cm2 and is furthermore shown to be stable under illumination at room temperature.

  3. Boron Doped Nanocrystalline Film with Improved Work Function as a Buffer Layer in Thin Film Silicon Solar Cells.

    Science.gov (United States)

    Park, Jinjoo; Shin, Chonghoon; Park, Hyeongsik; Jung, Junhee; Lee, Youn-Jung; Bong, Sungjae; Dao, Vinh Ai; Balaji, Nagarajan; Yi, Junsin

    2015-03-01

    We investigated thin film silicon solar cells with boron doped hydrogenated nanocrystalline silicon/ hydrogenated amorphous silicon oxide [p-type nc-Si:H/a-SiOx:H] layer. First, we researched the bandgap engineering of diborane (B2H6) doped wide bandgap hydrogenated nanocryslline silicon (p-type nc-Si:H) films, which have excellent electrical properties of high dark conductivity, and low activation energy. The films prepared with lower doping ratio and higher hydrogen dilution ratio had higher optical gap (Eg), with higher dark conductivity (σ(d)), and lower activation energy (Ea). We controlled Eg from 2.10 eV to 1.75 eV, with σ(d) from 1.1 S/cm to 7.59 x 10(-3) S/cm, and Ea from 0.040 eV to 0.128 eV. Next, we focused on the fabrication of thin film silicon solar cells. By inserting p-type nc-Si:H film into the thin film silicon solar cells, we achieved a remarkable increase in the built-in potential from 0.803 eV to 0.901 eV. By forming p-type nc-Si:H film between SnO2:F/ZnO:Al (30 nm) and p-type a-SiOx:H layer, the solar cell properties of open circuit voltage (Voc), short circuit current density (Jsc), and efficiency (η) were improved by 3.7%, 9.2%, and 9.8%, respectively.

  4. Effects of the Boron-Doped p+ Emitter on the Efficiency of the n-Type Silicon Solar Cell

    Directory of Open Access Journals (Sweden)

    Eun-Young Kim

    2013-01-01

    Full Text Available The optimum structure of the p+ emitter for the n-type silicon solar cell was determined with the simulation of the boron doping concentration. The boron concentration (NB in the p+ emitter was varied in the range of 1×1017 and 2×1022 atoms/cm3 while maintaining the base doping concentration at 2×1016 atoms/cm3. With the increase of the boron concentration, the open circuit voltage (VOC of the cell increased up to 0.525 V and then was nearly saturated at NB>5×1018 atoms/cm3. On the other hand, the short circuit current density (JSC began to decrease at NB>1×1019 atoms/cm3 due to the increase of the surface recombination loss, and without considering the variation of the contact resistance along the emitter doping level, the maximum efficiency of the cell was obtained at around NB=5×1018 atoms/cm3. While the contact resistance of the electrode decreases with the increase of the doping concentration in the p+ emitter, and with consideration of the variation of the contact resistance, the optimum value of NB for maximum efficiency shifted to the higher doping level.

  5. Investigation of charges carrier density in phosphorus and boron doped SiN{sub x}:H layers for crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Paviet-Salomon, B., E-mail: bertrand.paviet-salomon@epfl.ch [Commissariat à l’Énergie Atomique (CEA), Laboratoire d’Innovation pour les Technologies des Énergies Nouvelles et les nanomatériaux (LITEN), Institut National de l’Énergie Solaire - INES, 50 avenue du Lac Léman, 73377 Le Bourget du Lac (France); Gall, S. [Commissariat à l’Énergie Atomique (CEA), Laboratoire d’Innovation pour les Technologies des Énergies Nouvelles et les nanomatériaux (LITEN), Institut National de l’Énergie Solaire - INES, 50 avenue du Lac Léman, 73377 Le Bourget du Lac (France); Slaoui, A. [Institut de l’Électronique du Solide et des Systèmes (InESS), Unité Mixte de Recherche 7163 Centre National de la Recherche Scientifique-Université de Strasbourg (UMR 7163 CNRS-UDS), 23 rue du Loess, BP 20 CR, 67037 Strasbourg (France)

    2013-05-15

    Highlights: ► We investigate the properties of phosphorus and boron-doped silicon nitride films. ► Phosphorus-doped layers yield higher lifetimes than undoped ones. ► The fixed charges density decreases when increasing the films phosphorus content. ► Boron-doped films feature very low lifetimes. ► These doped layers are of particular interest for crystalline silicon solar cells. -- Abstract: Dielectric layers are of major importance in crystalline silicon solar cells processing, especially as anti-reflection coatings and for surface passivation purposes. In this paper we investigate the fixed charge densities (Q{sub fix}) and the effective lifetimes (τ{sub eff}) of phosphorus (P) and boron (B) doped silicon nitride layers deposited by plasma-enhanced chemical vapour deposition. P-doped layers exhibit a higher τ{sub eff} than standard undoped layers. In contrast, B-doped layers exhibit lower τ{sub eff}. A strong Q{sub fix} decrease is to be seen when increasing the P content within the film. Based on numerical simulations we also demonstrate that the passivation obtained with P- and B-doped layers are limited by the interface states rather than by the fixed charges.

  6. Transport properties of boron-doped single-walled silicon carbide nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Y.T. [Key laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China); Ding, R.X., E-mail: rx_ding@163.co [Key laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China); Song, J.X. [Key laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China); School of Electronic Engineering, Xi' an Shiyou University, Xi' an 710075 (China)

    2011-01-15

    The doped boron (B) atom in silicon carbide nanotube (SiCNT) can substitute carbon or silicon atom, forming two different structures. The transport properties of both B-doped SiCNT structures are investigated by the method combined non-equilibrium Green's function with density functional theory (DFT). As the bias ranging from 0.8 to 1.0 V, the negative differential resistance (NDR) effect occurs, which is derived from the great difficulty for electrons tunneling from one electrode to another with the increasing of localization of molecular orbital. The high similar transport properties of both B-doped SiCNT indicate that boron is a suitable impurity for fabricating nano-scale SiCNT electronic devices.

  7. Physics and modeling of ion implantation induced transient deactivation and diffusion processes in boron doped silicon

    Science.gov (United States)

    Chakravarthi, Srinivasan

    The economics of silicon processing requires predictive modeling capabilities for the continued rapid advancement of semiconductor technology. This is because it has become prohibitively expensive to develop a new process by running a large series of test lots through multi-billion dollar fabrication facilities. Effective process modeling requires an accurate physical understanding of the various interacting processes. The complexity of this problem is compounded by highly non-equilibrium phenomena associated with IC fabrication processes such as implantation annealing. Point defect supersaturations of many orders of magnitude are introduced following ion implantation, which is used to introduce the dopants into silicon. Such supersaturations dramatically alter the diffusion of dopants and reduce the electrical activation during the initial phase of the anneal. Boron is the primary p-type dopant used in silicon and thus understanding and modeling its deactivation/activation and diffusion is critical to predictive process simulation. Since boron is smaller than silicon, boron agglomerates with interstitials becoming electrically inactive. Modeling of boron clusters is complicated, as there is a huge array of potential boron-interstitial cluster compositions. A physical model for boron clustering is derived by identifying dominant clusters and rate limiting steps via atomistic calculations performed at Lawrence Livermore National Labs. The model is then used successfully to match a wide variety of chemical and electrical data. We further apply this model to understand and successfully predict ultra shallow junction formation. We find it is possible to explain some intriguing phenomenon observed during the formation of ultra shallow junctions, like saturation in junction depth despite increasing ramp-up rates. Researchers are exploring novel experimental processing steps like high energy Si pre-implants to produce highly active and shallow B junctions. To understand

  8. Phosphorus- and boron-doped hydrogenated amorphous silicon films prepared using vaporized liquid cyclopentasilane

    Energy Technology Data Exchange (ETDEWEB)

    Masuda, Takashi, E-mail: mtakashi@jaist.ac.jp [Japan Advanced Institute of Science and Technology, Nomi, Ishikawa, 923-1292 (Japan); Takagishi, Hideyuki; Shen, Zhongrong; Ohdaira, Keisuke; Shimoda, Tatsuya [Japan Advanced Institute of Science and Technology, Nomi, Ishikawa, 923-1292 (Japan); Japan Science and Technology Agency, ALCA, Nomi, Ishikawa, 923-1211 (Japan)

    2015-08-31

    A simple, inexpensive method for fabricating a hydrogenated amorphous silicon (a-Si:H) film using thermal chemical vapor deposition from cyclopentasilane (CPS) at atmospheric pressure with a substrate temperature of 370 °C is described. The reactant gas was generated from liquid CPS by vaporization in the deposition chamber. The vaporized CPS gas was transformed immediately into a-Si:H film on a heated substrate. The a-Si:H films could be doped either n- or p-type by dissolving appropriate amounts of white phosphorus or decaborane, respectively, in the liquid CPS before vaporization. This process allows deposition of doped a-Si:H films of photovoltaic device-quality without the need for handling, storage, or transportation of large amounts of gaseous reactants. - Highlights: • B and P doped a-Si:H films made from liquid materials is presented. • Decaborane and white phosphorus is dissolved in the liquid materials. • A simple, inexpensive method for fabricating a-Si:H films using non-vacuum process. • The doped a-Si:H films with usable quality for photovoltaic devices are deposited.

  9. Effect of argon flow on promoting boron doping for in-situ grown silicon nitride thin films containing silicon quantum dots

    Science.gov (United States)

    Liu, Jia; Liu, Bin; Zhang, Xisheng; Guo, Xiaojia; (Frank Liu, Shengzhong

    2017-07-01

    Boron-doped silicon nitride thin films (SiNx) containing silicon quantum dots (Si QD) were prepared in situ by plasma enhanced chemical vapor deposition. With the aim of optimizing the performance of thin films, the mixed gas including argon and hydrogen was applied as dilution. The effects of Ar flow on the structural, electrical and optical properties of B-doped SiNx thin films were systemically studied through various characterizations. By tuning the Ar flow, the properties, such as QD size, crystallinity and optical band gap, can be effectively controlled. The B-doping efficiency in thin films was proved to be promoted by introducing moderate Ar flow. The maximum values of dark conductivity (1.52 S cm-1) and carrier concentration (2.41 × 1019 cm-3) were obtained for the B-doped SiNx thin films at the Ar flow of 200 sccm. Furthermore, the mechanism on the promotion in B-doping was illustrated in detail in this paper.

  10. Low-temperature TCT characterization of heavily proton irradiated p-type magnetic Czochralski silicon detectors

    CERN Document Server

    Härkönen, J; Luukka, P; Kassamakov, I; Autioniemi, M; Tuominen, E; Sane, P; Pusa, P; Räisänen, J; Eremin, V; Verbitskaya, E; Li, Z

    2007-01-01

    n+/p−/p+ pad detectors processed at the Microelectronics Center of Helsinki University of Technology on boron-doped p-type high-resistivity magnetic Czochralski (MCz-Si) silicon substrates have been investigated by the transient current technique (TCT) measurements between 100 and 240 K. The detectors were irradiated by 9 MeV protons at the Accelerator Laboratory of University of Helsinki up to 1 MeV neutron equivalent fluence of 2×1015 n/cm2. In some of the detectors the thermal donors (TD) were introduced by intentional heat treatment at 430 °C. Hole trapping time constants and full depletion voltage values were extracted from the TCT data. We observed that hole trapping times in the order of 10 ns were found in heavily (above 1×1015 neq/cm2) irradiated samples. These detectors could be fully depleted below 500 V in the temperature range of 140–180 K.

  11. Boron doping a semiconductor particle

    Science.gov (United States)

    Stevens, Gary Don; Reynolds, Jeffrey Scott; Brown, Louanne Kay

    1998-06-09

    A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.

  12. Boron-doped nanodiamonds as possible agents for local hyperthermia

    Science.gov (United States)

    Vervald, A. M.; Burikov, S. A.; Vlasov, I. I.; Ekimov, E. A.; Shenderova, O. A.; Dolenko, T. A.

    2017-04-01

    In this work, the effective heating of surrounding water by heavily-boron-doped nanodiamonds (NDs) under laser irradiation of visible wavelength was found. Using Raman scattering spectroscopy of aqueous suspensions of boron-doped NDs, it was found that this abnormally high heating results in the weakening of hydrogen bonds much more so (2–5 times stronger) than for undoped NDs. The property of boron-doped NDs to heat a solvent under the influence of laser radiation (1–5 W cm‑2) opens broad prospects for their use to create nanoagents for medical oncology and local hyperthermia.

  13. Low-Temperature Softening Due to Vacancy Orbital with Γ8 Quartet Ground State in Boron-Doped Floating Zone Silicon

    Science.gov (United States)

    Baba, Shotaro; Akatsu, Mitsuhiro; Mitsumoto, Keisuke; Komatsu, Satoru; Horie, Kunihiko; Nemoto, Yuichi; Yamada-Kaneta, Hiroshi; Goto, Terutaka

    2013-08-01

    We have carried out low-temperature ultrasonic measurements using shear-mode ultrasound to clarify the quantum state of a vacancy orbital in boron-doped silicon grown by the floating zone (FZ) method. The elastic constants (C11-C12)/2 and C44 of the transverse mode exhibit considerable softening below 2 and 5 K down to the base temperature of 30 mK, respectively. The elastic constant C44 measured by the three ultrasonic modes (kx,uy), (kz,ux), and (kx,uz) shows the different magnetic field dependences among the configurations under applied magnetic fields along the z-axis. The elastic softening and the magnetic field dependence of the elastic constants are accounted for by the quadrupole susceptibility based on the energy level scheme of the vacancy orbital with a Γ8 quartet ground state and Γ7 doublet excited state located at an energy of 1 K. The difference in C44 between the two ultrasonic modes (kz,ux) and (kx,uz) at fields along the z-axis indicates that the Γ8 quartet ground state is slightly split by local strain in the silicon sample. The quantum state of the vacancy orbital is expected to be sensitive to strain because of the extremely large quadrupole-strain coupling energy of gΓ≈ 105 K due to the extensively spreading orbital radius of r≈ 1 nm. The differences in variation of the low-temperature softening and magnetic field dependence among eight samples cut out from different locations of the present boron-doped FZ silicon ingot evidence the inhomogeneous distribution of the vacancy concentration.

  14. Boron-doped silicon surfaces from $B_2H_6$ passivated by ALD $Al_2O_3$ for solar cells

    NARCIS (Netherlands)

    Mok, K.R.C. (Caroline); Loo, van de Bas W.H.; Vlooswijk, Ard H.G.; Kessels, W.M.M. (Erwin); Nanver, Lis K.

    2015-01-01

    A p+-doping method for silicon solar cells is presented whereby boron atoms from a pure boron (PureB) layer deposited by chemical vapor deposition using B2H6 as precursor were thermally diffused into silicon. The applicability of this doping process for the doped surfaces of silicon solar cells was

  15. Global and local superconductivity in boron-doped granular diamond.

    Science.gov (United States)

    Zhang, Gufei; Turner, Stuart; Ekimov, Evgeny A; Vanacken, Johan; Timmermans, Matias; Samuely, Tomás; Sidorov, Vladimir A; Stishov, Sergei M; Lu, Yinggang; Deloof, Bart; Goderis, Bart; Van Tendeloo, Gustaaf; Van de Vondel, Joris; Moshchalkov, Victor V

    2014-04-02

    Strong granularity-correlated and intragrain modulations of the superconducting order parameter are demonstrated in heavily boron-doped diamond situated not yet in the vicinity of the metal-insulator transition. These modulations at the superconducting state (SC) and at the global normal state (NS) above the resistive superconducting transition, reveal that local Cooper pairing sets in prior to the global phase coherence.

  16. Bosonic Anomalies in Boron-Doped Polycrystalline Diamond

    Science.gov (United States)

    Zhang, Gufei; Samuely, Tomas; Kačmarčík, Jozef; Ekimov, Evgeny A.; Li, Jun; Vanacken, Johan; Szabó, Pavol; Huang, Junwei; Pereira, Paulo J.; Cerbu, Dorin; Moshchalkov, Victor V.

    2016-12-01

    Quantum confinement and coherence effects are considered the cause of many specific features for systems which are generally low dimensional, strongly disordered, and/or situated in the vicinity of the metal-insulator transition. Here, we report on the observation of anomalous resistance peak and specific heat peaks superimposed at the superconducting transition of heavily boron-doped polycrystalline bulk diamond, which is a three-dimensional system situated deep on the metallic side of the boron-doping-driven metal-insulator transition in diamond. The anomalous resistance peak and specific heat peaks are interpreted as a result of confinement and coherence effects in the presence of intrinsic and extrinsic granularity. Our data, obtained for superconducting diamond, provide a reference for understanding the superconductivity in other granular disordered systems. Furthermore, our study brings attention to the significant influence of granular disorder on the physical properties of boron-doped diamond, which is considered a promising candidate for electronics applications.

  17. Band Gap Narrowing in Heavily Doped Silicon.

    Science.gov (United States)

    Gupta, Tapan Kumar

    Two analytic models for transport and band gap narrowing in heavily doped (N_{rm D} > 10^{20} cm^ {-3}) silicon have been set up and verified through measurements on n^{+} -p junction devices. The first model is based on calculation of the ratio of the charge present in the emitter of the n^{+} region of the junction to that of the charge present in the absence of band gap shrinkage. Fermi-Dirac statistics are employed and are found to have a significant effect at this doping level. The second model is based on current transport of minority carriers in the n^{+} region. In this model only two parameters need to be known, the diffusion coefficient and the diffusion length for minority carriers, to calculate the band gap narrowing. An empirical relation between band gap narrowing and donor concentration has also been established based on experimental values of diffusion coefficient and mobility. These models have been verified by several different experimental techniques including surface photovoltage, open circuit voltage decay, photoconductivity decay and modulation reflection spectroscopy. The results indicate that, in the impurity range above about 10^{20} cm^{-3}, Fermi-Dirac statistics must be invoked in order to achieve a satisfactory fit with experimental data.

  18. Effect of boron doping on first-order Raman scattering in superconducting boron doped diamond films

    Science.gov (United States)

    Kumar, Dinesh; Chandran, Maneesh; Ramachandra Rao, M. S.

    2017-05-01

    Aggregation of impurity levels into an impurity band in heavily boron doped diamond results in a background continuum and discrete zone centre phonon interference during the inelastic light scattering process. In order to understand the Raman scattering effect in granular BDD films, systematically heavily doped samples in the semiconducting and superconducting regimes have been studied using the excitation wavelengths in the UV and visible regions. A comprehensive analysis of the Fano resonance effect as a function of the impurity concentrations and the excitation frequencies is presented. Various Raman modes available in BDD including signals from the grain boundaries are discussed.

  19. Studies on the oxygen precipitation in highly boron doped silicon; Untersuchungen zur Sauerstoffausscheidung in hoch bordotiertem Silicium

    Energy Technology Data Exchange (ETDEWEB)

    Zschorsch, Markus

    2007-12-14

    The aim of this thesis was the getting of new knowledge on the elucidation of the oxygen precipitation in highly doped silicon. In the study of the early phases of the oxygen precipitation boron-oxygen complexes and their kinetics could be indirectly detected. These arise already during the cooling of the crystal and can be destroyed by subsequent temperature processes. The formation of the here as BO assumed species during the cooling after the silicon crystal fabrication could be numerically reproduced. Furthermore the study of early precipitation phases by means of neutron small angle scattering a maximum of the oxygen precipitation at {rho}=9 m{omega}cm. It could be shown that the decreasing of this at increasing boron concentration can be most probably reduced to boron precipitations. Furthermore it could be shown that after a tempering time of 24 hours at 700 C in silicon with {rho}=9 m{omega}cm platelet-shaped precipitates form. By the study of the precipitate growth could be shown that also in this phase the oxygen precipitation in silicon is strongest with a specific resistance of {rho}=9 m{omega}cm. By means of FTIR spectroscopy a new absorption band at a wave number of 1038 cm{sup -1} was found, which could be assigned to a boron species. By different experiments it is considered as probable that at this species it deals with BI respectively B{sub 2}I complexes.

  20. Study of the effect of boron doping on the solid phase crystallisation of hydrogenated amorphous silicon films

    Energy Technology Data Exchange (ETDEWEB)

    Westra, J.M.; Swaaij, R.A.C.M.M. van [Photovoltaic Materials and Devices, Department of Sustainable Electrical Energy, Delft University of Technology, Delft (Netherlands); Šutta, P. [New Technologies-Research Centre, University of West Bohemia, Plzen (Czech Republic); Sharma, K.; Creatore, M. [Department of Applied Physics, Eindhoven University of Technology, Eindhoven (Netherlands); Zeman, M. [Photovoltaic Materials and Devices, Department of Sustainable Electrical Energy, Delft University of Technology, Delft (Netherlands)

    2014-10-01

    Thin-film polycrystalline silicon on glass obtained by crystallization of hydrogenated amorphous silicon (a-Si:H) films is an interesting alternative for thin-film silicon solar cells. Although the solar-cell efficiencies are still limited, this technique offers excellent opportunity to study the influence of B-doping on the crystallisation process of a-Si:H. Our approach is to slowly crystallize B-doped a-Si:H films by solid phase crystallization in the temperature range 580–600°C. We use plasma-enhanced chemical vapour deposition (PECVD) and expanding thermal plasma chemical vapour deposition (ETPCVD) for the B-doped a-Si:H deposition. In this work we show the first in-situ study of the crystallization process of B-doped a-Si:H films produced by ETPCVD and make a comparison to the crystallization of intrinsic ETPCVD deposited a-Si:H as well as intrinsic and B-doped a-Si:H films deposited by PECVD. The crystallization process is investigated by in-situ x-ray diffraction, using a high temperature chamber for the annealing procedure. The study shows a strong decrease in the time required for full crystallisation for B-doped a-Si:H films compared to the intrinsic films. The time before the onset of crystallisation is reduced by the incorporation of B as is the grain growth velocity. The time to full crystallisation can be manipulated by the B{sub 2}H{sub 6}-to-SiH{sub 4} ratio used during the deposition and by the microstructure of the as-deposited a-Si:H films. - Highlights: • Solid-phase crystallization of B-doped a-Si:H films is presented. • Crystallization study of B-doped and intrinsic a-Si:H by in-situ x-ray diffraction • The microstructure and B-doping of a-Si:H influences the crystallisation process. • B enhances the grain growth rate, but the effect on the nucleation rate is limited.

  1. Boron-Proton Nuclear-Fusion Enhancement Induced in Boron-Doped Silicon Targets by Low-Contrast Pulsed Laser

    Directory of Open Access Journals (Sweden)

    A. Picciotto

    2014-08-01

    Full Text Available We show that a spatially well-defined layer of boron dopants in a hydrogen-enriched silicon target allows the production of a high yield of alpha particles of around 10^{9} per steradian using a nanosecond, low-contrast laser pulse with a nominal intensity of approximately 3×10^{16}  W cm^{−2}. This result can be ascribed to the nature of the long laser-pulse interaction with the target and with the expanding plasma, as well as to the optimal target geometry and composition. The possibility of an impact on future applications such as nuclear fusion without production of neutron-induced radioactivity and compact ion accelerators is anticipated.

  2. Low temperature boron doping into crystalline silicon by boron-containing species generated in Cat-CVD apparatus

    Energy Technology Data Exchange (ETDEWEB)

    Ohta, Tatsunori, E-mail: s1130011@jaist.ac.jp [Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); CREST, Japan Science and Technology Agency (JST), 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan); Koyama, Koichi [Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); CREST, Japan Science and Technology Agency (JST), 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan); Ohdaira, Keisuke [Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Matsumura, Hideki [Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); CREST, Japan Science and Technology Agency (JST), 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan)

    2015-01-30

    We have discovered that phosphorus (P) atoms can be doped into crystalline silicon (c-Si) at temperatures below 350 °C or even at 80 °C by using species generated by catalytic cracking reaction of phosphine (PH{sub 3}) molecules with heated tungsten (W) catalyzer in Cat-CVD apparatus. As further investigation, here, we study the feasibility of low temperature doping of boron (B) atoms into c-Si by using decomposed species generated similarly from diborane (B{sub 2}H{sub 6}) molecules. Dependency of properties of doped layers on catalyzer temperature (T{sub cat}) and substrate temperature (T{sub s}) is studied by both the Van der Pauw method based on the Hall-effect measurements and secondary ion mass spectroscopy (SIMS) for B doping in addition to P doping. It is found that, similarly to P doping, the surface of n-type c-Si is converted to p-type even at T{sub s} = 80 °C for T{sub cat} over 800 °C when c-Si is exposed to B{sub 2}H{sub 6} cracked species for a few minutes, and that the heat of substrate over 300 °C is likely to help for B doping contrary to P doping.

  3. High quality boron-doped epitaxial layers grown at 200°C from SiF4/H2/Ar gas mixtures for emitter formation in crystalline silicon solar cells

    Science.gov (United States)

    Léal, Ronan; Haddad, Farah; Poulain, Gilles; Maurice, Jean-Luc; Roca i Cabarrocas, Pere

    2017-02-01

    Controlling the doping profile in solar cells emitter and front/back surface field is mandatory to reach high efficiencies. In the current state of the art, these doped layers are made by dopant diffusion at around 900°C, which implies potential temperature induced damages in the c-Si absorber and for which a precise control of doping is difficult. An alternative solution based on boron-doped epitaxial silicon layers grown by plasma-enhanced chemical vapor deposition (PECVD) from 200°C using SiF4/H2/Ar/B2H6 chemistry is reported. The structural properties of the doped and undoped epitaxial layers were assessed by spectroscopic ellipsometry (SE), high resolution transmission electron microscopy (HR-TEM) and X-ray diffraction (XRD). The incorporation of boron has been studied via plasma profiling time of flight mass spectrometry (PP-TOFMS) and secondary ion mass spectrometry (SIMS) measurements. The boron-doped epitaxial layers revealed excellent structural and electrical properties even for high carrier concentrations (>1019cm-3). Sheet resistances between 100 and 130 Ω/sq can been obtained depending on the thickness and the doping concentration, which is within the range of targeted values for emitters in c-Si solar cells. Electrochemical capacitance voltage (ECV) revealed a uniform doping profile around 3.1019 cm-3 and by comparing with SIMS measurement a doping efficiency around 50% has been found.

  4. High quality boron-doped epitaxial layers grown at 200°C from SiF4/H2/Ar gas mixtures for emitter formation in crystalline silicon solar cells

    Directory of Open Access Journals (Sweden)

    Ronan Léal

    2017-02-01

    Full Text Available Controlling the doping profile in solar cells emitter and front/back surface field is mandatory to reach high efficiencies. In the current state of the art, these doped layers are made by dopant diffusion at around 900°C, which implies potential temperature induced damages in the c-Si absorber and for which a precise control of doping is difficult. An alternative solution based on boron-doped epitaxial silicon layers grown by plasma-enhanced chemical vapor deposition (PECVD from 200°C using SiF4/H2/Ar/B2H6 chemistry is reported. The structural properties of the doped and undoped epitaxial layers were assessed by spectroscopic ellipsometry (SE, high resolution transmission electron microscopy (HR-TEM and X-ray diffraction (XRD. The incorporation of boron has been studied via plasma profiling time of flight mass spectrometry (PP-TOFMS and secondary ion mass spectrometry (SIMS measurements. The boron-doped epitaxial layers revealed excellent structural and electrical properties even for high carrier concentrations (>1019cm-3. Sheet resistances between 100 and 130 Ω/sq can been obtained depending on the thickness and the doping concentration, which is within the range of targeted values for emitters in c-Si solar cells. Electrochemical capacitance voltage (ECV revealed a uniform doping profile around 3.1019 cm-3 and by comparing with SIMS measurement a doping efficiency around 50% has been found.

  5. Determination of active doping in highly resistive boron doped silicon nanocrystals embedded in SiO{sub 2} by capacitance voltage measurement on inverted metal oxide semiconductor structure

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Tian, E-mail: tianz@student.unsw.edu.au; Puthen-Veettil, Binesh; Wu, Lingfeng; Jia, Xuguang; Lin, Ziyun; Yang, Terry Chien-Jen; Conibeer, Gavin; Perez-Wurfl, Ivan [Australian Centre for Advanced Photovoltaics, UNSW Australia, Kensington, New South Wales 2052 (Australia)

    2015-10-21

    We investigate the Capacitance-Voltage (CV) measurement to study the electrically active boron doping in Si nanocrystals (ncSi) embedded in SiO{sub 2}. The ncSi thin films with high resistivity (200–400 Ω cm) can be measured by using an inverted metal oxide semiconductor (MOS) structure (Al/ncSi (B)/SiO{sub 2}/Si). This device structure eliminates the complications from the effects of lateral current flow and the high sheet resistance in standard lateral MOS structures. The characteristic MOS CV curves observed are consistent with the effective p-type doping. The CV modeling method is presented and used to evaluate the electrically active doping concentration. We find that the highly boron doped ncSi films have electrically active doping of 10{sup 18}–10{sup 19 }cm{sup −3} despite their high resistivity. The saturation of doping at about 1.4 × 10{sup 19 }cm{sup −3} and the low doping efficiency less than 5% are observed and discussed. The calculated effective mobility is in the order of 10{sup −3} cm{sup 2}/V s, indicating strong impurity/defect scattering effect that hinders carriers transport.

  6. Determination of active doping in highly resistive boron doped silicon nanocrystals embedded in SiO2 by capacitance voltage measurement on inverted metal oxide semiconductor structure

    Science.gov (United States)

    Zhang, Tian; Puthen-Veettil, Binesh; Wu, Lingfeng; Jia, Xuguang; Lin, Ziyun; Yang, Terry Chien-Jen; Conibeer, Gavin; Perez-Wurfl, Ivan

    2015-10-01

    We investigate the Capacitance-Voltage (CV) measurement to study the electrically active boron doping in Si nanocrystals (ncSi) embedded in SiO2. The ncSi thin films with high resistivity (200-400 Ω cm) can be measured by using an inverted metal oxide semiconductor (MOS) structure (Al/ncSi (B)/SiO2/Si). This device structure eliminates the complications from the effects of lateral current flow and the high sheet resistance in standard lateral MOS structures. The characteristic MOS CV curves observed are consistent with the effective p-type doping. The CV modeling method is presented and used to evaluate the electrically active doping concentration. We find that the highly boron doped ncSi films have electrically active doping of 1018-1019 cm-3 despite their high resistivity. The saturation of doping at about 1.4 × 1019 cm-3 and the low doping efficiency less than 5% are observed and discussed. The calculated effective mobility is in the order of 10-3 cm2/V s, indicating strong impurity/defect scattering effect that hinders carriers transport.

  7. Opportunities and challenges in the use of heavily doped polycrystalline silicon as a thermoelectric material. An experimental study

    OpenAIRE

    2010-01-01

    Large-volume deployment of Si-based Seebeck generators can be foreseen only if polycrystalline rather than single crystalline materials can be actually used. The aim of this study was therefore to verify whether polycrystalline Si films deposited on top of a SiO$_2$ insulating layer can develop interesting thermoelectric power factors. We prepared 450-nm thick heavily boron doped polysilicon layers, setting the initial boron content in the film to be in excess of the boron solubility in polyc...

  8. Ultratough single crystal boron-doped diamond

    Science.gov (United States)

    Hemley, Russell J [Carnegie Inst. for Science, Washington, DC ; Mao, Ho-Kwang [Carnegie Inst. for Science, Washington, DC ; Yan, Chih-Shiue [Carnegie Inst. for Science, Washington, DC ; Liang, Qi [Carnegie Inst. for Science, Washington, DC

    2015-05-05

    The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m.sup.1/2. The invention further relates to a method of manufacturing single crystal boron doped CVD diamond. The growth rate of the diamond can be from about 20-100 .mu.m/h.

  9. Oxygen precipitation behavior in heavily arsenic doped silicon crystals

    Science.gov (United States)

    Haringer, Stephan; Gambaro, Daniela; Porrini, Maria

    2017-01-01

    Silicon crystals containing different levels of arsenic concentration and oxygen content were grown, and samples were taken at various positions along the crystal, to study the influence of three main factors, i.e. the initial oxygen content, the dopant concentration and the thermal history, on the nucleation of oxygen precipitates during crystal growth and cooling in the puller. The crystal thermal history was reconstructed by means of computer modeling, simulating the temperature distribution in the crystal at several growth stages. The oxygen precipitation was characterized after a thermal cycle of 4 h at 800 °C for nuclei stabilization +16 h at 1000 °C for nuclei growth. Oxygen precipitates were counted under microscope on the cleaved sample surface after preferential etching. Lightly doped silicon samples were also included, as reference. Our results show that even in heavily arsenic doped silicon the oxygen precipitation is a strong function of the initial oxygen concentration, similar to what has been observed for lightly doped silicon. In addition, a precipitation retardation effect is observed in the arsenic doped samples when the dopant concentration is higher than 1.7×1019 cm-3 compared to lightly doped samples with the same initial oxygen content and crystal thermal history. Finally, a long permanence time of the crystal in the temperature range between 450 °C and 750 °C enhances the oxygen precipitation, showing that this is an effective temperature range for oxygen precipitation nucleation in heavily arsenic doped silicon.

  10. Comparative study of the effects of phosphorus and boron doping in vapor-liquid-solid growth with fixed flow of silicon gas

    Science.gov (United States)

    Islam, Md. Shofiqul; Mehedi, Ibrahim Mustafa

    2016-04-01

    This work was carried out to investigate the comparative effects of phosphorus and boron doing in vapor-liquid-solid (VLS) growth. Doped Si microneedles were grown by VLS mechanism at the temperature of 700 °C or less using Au as the catalyst. VLS growth using in-situ doping with the mixed gas of Si2H6 and PH3 produced phosphorus doped n-Si microneedles at Au dot sites, whereas, the mixed gas of Si2H6 and B2H6 produced boron doped p-Si microneedles. The variation of growth rate, diameter, resistivity, impurity concentration and carrier (electron, hole) mobility of these n-Si and p-Si microneeedles were investigated and compared with the variation of dopant gas (PH3 or B2H6) flow, with a fixed flow of Si gas (Si2H6). This comparative study shall be helpful while fabricating devices by growing n-Si and p-Si microneedles one above another by multistep (2-step or 3-step) VLS growth.

  11. Photovoltaic investigation of minority carrier lifetime in the heavily-doped emitter layer of silicon junction solar cell

    Science.gov (United States)

    Ho, C.-T.

    1982-01-01

    The results of experiments on the recombination lifetime in a phosphorus diffused N(+) layer of a silicon solar cell are reported. The cells studied comprised three groups of Czochralski grown crystals: boron doped to one ohm-cm, boron doped to 6 ohm-cm, and aluminum doped to one ohm-cm, all with a shunt resistance exceeding 500 kilo-ohms. The characteristic bulk diffusion length of a cell sample was determined from the short circuit current response to light at a wavelength of one micron. The recombination rates were obtained by measurement of the open circuit voltage as a function of the photogeneration rate. The recombination rate was found to be dependent on the photoinjection level, and is positive-field controlled at low photoinjection, positive-field influence Auger recombination at a medium photoinjection level, and negative-field controlled Auger recombination at a high photoinjection level.

  12. Near-infrared free carrier absorption in heavily doped silicon

    Energy Technology Data Exchange (ETDEWEB)

    Baker-Finch, Simeon C., E-mail: simeon.bakerfinch@gmail.com [School of Engineering, Australian National University, Canberra, ACT 0200 (Australia); PV Lighthouse, Coledale, NSW 2515 (Australia); McIntosh, Keith R. [PV Lighthouse, Coledale, NSW 2515 (Australia); Yan, Di; Fong, Kean Chern; Kho, Teng C. [School of Engineering, Australian National University, Canberra, ACT 0200 (Australia)

    2014-08-14

    Free carrier absorption in heavily doped silicon can have a significant impact on devices operating in the infrared. In the near infrared, the free carrier absorption process can compete with band to band absorption processes, thereby reducing the number of available photons to optoelectronic devices such as solar cells. In this work, we fabricate 18 heavily doped regions by phosphorus and boron diffusion into planar polished silicon wafers; the simple sample structure facilitates accurate and precise measurement of the free carrier absorptance. We measure and model reflectance and transmittance dispersion to arrive at a parameterisation for the free carrier absorption coefficient that applies in the wavelength range between 1000 and 1500 nm, and the range of dopant densities between ∼10{sup 18} and 3 × 10{sup 20} cm{sup −3}. Our measurements indicate that previously published parameterisations underestimate the free carrier absorptance in phosphorus diffusions. On the other hand, published parameterisations are generally consistent with our measurements and model for boron diffusions. Our new model is the first to be assigned uncertainty and is well-suited to routine device analysis.

  13. Dependence of transport properties in tunnel junction on boron doping

    Energy Technology Data Exchange (ETDEWEB)

    Shi, M.J.; Zeng, X.B.; Liu, S.Y.; Peng, W.B; Xiao, H.B; Liao, X.B.; Wang, Z.G.; Kong, G.L. [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2010-04-15

    Boron-doped hydrogenated silicon films with different gaseous doping ratio (B{sub 2}H{sub 6}/SiH{sub 4}) were fabricated as recombination p layers in tunnel junctions. The measurements of I-V characteristics of the junctions and transparency spectra of p layer indicated that the best gaseous doping ratio of the recombination layer is 0.04, which is correlated to the degradation of short range order (SRO) in the inserted p thin film. The junction with such recombination layer has small resistance, near ohmic contact. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Low temperature growth of heavy boron-doped hydrogenated Ge epilayers and its application in Ge/Si photodetectors

    Science.gov (United States)

    Kuo, Wei-Cheng; Lee, Ming Jay; Wu, Mount-Learn; Lee, Chien-Chieh; Tsao, I.-Yu; Chang, Jenq-Yang

    2017-04-01

    In this study, heavily boron-doped hydrogenated Ge epilayers are grown on Si substrates at a low growth temperature (220 °C). The quality of the boron-doped epilayers is dependent on the hydrogen flow rate. The optical emission spectroscopic, X-ray diffraction and Hall measurement results demonstrate that better quality boron-doped Ge epilayers can be obtained at low hydrogen flow rates (0 sccm). This reduction in quality is due to an excess of hydrogen in the source gas, which breaks one of the Ge-Ge bonds on the Ge surface, leading to the formation of unnecessary dangling bonds. The structure of the boron doped Ge epilayers is analyzed by transmission electron microscopy and atomic force microscopy. In addition, the performance, based on the I-V characteristics, of Ge/Si photodetectors fabricated with boron doped Ge epilayers produced under different hydrogen flow rates was examined. The photodetectors with boron doped Ge epilayers produced with a low hydrogen flow rate (0 sccm) exhibited a higher responsivity of 0.144 A/W and a lower dark current of 5.33 × 10-7 A at a reverse bias of 1 V.

  15. Temperature admittance spectroscopy of boron doped chemical vapor deposition diamond

    Energy Technology Data Exchange (ETDEWEB)

    Zubkov, V. I., E-mail: VZubkovspb@mail.ru; Kucherova, O. V.; Zubkova, A. V.; Ilyin, V. A.; Afanas' ev, A. V. [St. Petersburg State Electrotechnical University (LETI), Professor Popov Street 5, 197376 St. Petersburg (Russian Federation); Bogdanov, S. A.; Vikharev, A. L. [Institute of Applied Physics of the Russian Academy of Sciences, Ul' yanov Street 46, 603950 Nizhny Novgorod (Russian Federation); Butler, J. E. [St. Petersburg State Electrotechnical University (LETI), Professor Popov Street 5, 197376 St. Petersburg (Russian Federation); Institute of Applied Physics of the Russian Academy of Sciences, Ul' yanov Street 46, 603950 Nizhny Novgorod (Russian Federation); National Museum of Natural History (NMNH), P.O. Box 37012 Smithsonian Inst., Washington, D.C. 20013-7012 (United States)

    2015-10-14

    Precision admittance spectroscopy measurements over wide temperature and frequency ranges were carried out for chemical vapor deposition epitaxial diamond samples doped with various concentrations of boron. It was found that the experimentally detected boron activation energy in the samples decreased from 314 meV down to 101 meV with an increase of B/C ratio from 600 to 18000 ppm in the gas reactants. For the heavily doped samples, a transition from thermally activated valence band conduction to hopping within the impurity band (with apparent activation energy 20 meV) was detected at temperatures 120–150 K. Numerical simulation was used to estimate the impurity DOS broadening. Accurate determination of continuously altering activation energy, which takes place during the transformation of conduction mechanisms, was proposed by numerical differentiation of the Arrhenius plot. With increase of boron doping level the gradual decreasing of capture cross section from 3 × 10{sup −13} down to 2 × 10{sup −17} cm{sup 2} was noticed. Moreover, for the hopping conduction the capture cross section becomes 4 orders of magnitude less (∼2 × 10{sup −20} cm{sup 2}). At T > T{sub room} in doped samples the birth of the second conductance peak was observed. We attribute it to a defect, related to the boron doping of the material.

  16. Structure and superconductivity of isotope-enriched boron-doped diamond

    Directory of Open Access Journals (Sweden)

    Evgeny A Ekimov, Vladimir A Sidorov, Andrey V Zoteev, Yury B Lebed, Joe D Thompson and Sergey M Stishov

    2008-01-01

    Full Text Available Superconducting boron-doped diamond samples were synthesized with isotopes of 10B, 11B, 13C and 12C. We claim the presence of a carbon isotope effect on the superconducting transition temperature, which supports the 'diamond-carbon'-related nature of superconductivity and the importance of the electron–phonon interaction as the mechanism of superconductivity in diamond. Isotope substitution permits us to relate almost all bands in the Raman spectra of heavily boron-doped diamond to the vibrations of carbon atoms. The 500 cm−1 Raman band shifts with either carbon or boron isotope substitution and may be associated with vibrations of paired or clustered boron. The absence of a superconducting transition (down to 1.6 K in diamonds synthesized in the Co–C–B system at 1900 K correlates with the small boron concentration deduced from lattice parameters.

  17. Calculation of effective band gap narrowing in heavily-doped and compensated silicon

    Science.gov (United States)

    Polsky, B. S.; Rimshans, J. S.

    1991-06-01

    The effective band gap narrowing in heavily-doped and compensated silicon for different values of impurity concentration is calculated within the semiclassical approximation. The calculated and known measured data are compared.

  18. Effect of Rapid Thermal Process on Oxygen Precipitates in Heavily Sb-Doped Silicon Wafer

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Oxygen precipitates in heavily Sb-doped silicon after rapid thermal process (RTP) in Ar ambient were investigated by RTP at high temperature following annealing at 800 ℃ for 4 h and 1000 ℃ for 16 h. RTP temperature and cooling rates were changed from 1200 to 1260 ℃ and from 10 to 100 ℃·s-1, respectively. The experiment results show that high density of oxygen precipitates is observed in heavily Sb-doped wafer. It is found that the oxygen precipitates in heavily Sb-doped silicon are enhanced at high cooling rate.

  19. High Voltage Operation of heavily irradiated silicon microstrip detectors

    CERN Document Server

    Gu, W H; Angarano, M M; Bader, A; Biggeri, U; Boemi, D; Braibant, S; Breuker, H; Bruzzi, Mara; Caner, A; Catacchini, E; Civinini, C; Creanza, D; D'Alessandro, R; Demaria, N; Eklund, C; Peisert, Anna; Feld, L; Fiore, L; Focardi, E; Fürtjes, A; Glessing, B; Hall, G; Hammerstrom, R; Dollan, Ralph; Huhtinen, M; Karimäki, V; König, S; Lenzi, M; Lübelsmeyer, K; Maggi, G; Mannelli, M; Marchioro, A; Mariotti, C; Mättig, P; McEvoy, B; Meschini, M; My, S; Pandoulas, D; Parrini, G; Pieri, M; Dollan, Ralph; Potenza, R; Raso, G; Raymond, M; Schmitt, B; Selvaggi, G; Siedling, R; Silvestris, L; Skog, K; Stefanini, G; Tempesta, P; Tricomi, A; Watts, S; Wittmer, B; De Palma, M

    1999-01-01

    We discuss the results obtained from the R&D studies, done within the CMS experiment at LHC related to the behaviour of silicon microstrip prototype detectors when they are operated at high bias voltages before and after heavy irradiation, simulating up to 10 years of LHC running conditions. We have found detectors from several manufacturesrs that are able to work at V_bias > 500 Volts before and after the irradiation procedure, maintaining an acceptable performance with S/N > 14, efficiency close to 100% and few ghost hits.

  20. Synthesis and characterization of boron-doped carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Ceragioli, H J; Peterlevitz, A C; Quispe, J C R; Pasquetto, M P; Sampaio, M A; Baranauskas, V [Faculdade de Engenharia Eletrica e Computacao, Departamento de Semicondutores, Instrumentos e Fotonica, Universidade Estadual de Campinas, UNICAMP, Av. Albert Einstein N.400, 13083-852 Campinas SP Brasil (Brazil); Larena, A [Department of Chemical Industrial Engineering and Environment, Universidad Politecnica de Madrid, E.T.S. Ingenieros Industriales, C/ Jose Gutierrez Abascal, Madrid (Spain)], E-mail: vitor.baranauskas@gmail.com

    2008-03-15

    Boron-doped carbon nanotubes have been prepared by chemical vapour deposition of ethyl alcohol doped with B{sub 2}O{sub 3} using a hot-filament system. Multi-wall carbon nanotubes of diameters in the range of 30-100 nm have been observed by field emission scanning electron microscopy (FESEM). Raman measurements indicated that the degree of C-C sp{sup 2} order decreased with boron doping. Lowest threshold fields achieved were 1.0 V/{mu}m and 2.1 V/{mu}m for undoped and boron-doped samples, respectively.

  1. Bandgap narrowing in moderately to heavily doped silicon

    Science.gov (United States)

    Lanyon, H. P. D.; Tuft, R. A.

    1979-01-01

    A theoretical model of bandgap narrowing in silicon at high doping levels has been developed. The model takes into account the electrostatic energy of interaction between a minority carrier and the majority carriers surrounding it, which reduces the thermal energy necessary for creation of an electron-hole pair. A pair energy similar to the excitonic binding energy of bound electron-hole pairs in insulators is obtained. Theoretical results are in excellent agreement with experimental results in the doping range from 3 times 10 to the 17th to 1.5 times 10 to the 20th/cu cm at room temperature. These results indicate that at high injection levels such as a transistor biased into the conductivity-modulation regime or a solar cell whose surface is established by ion implantation into an oxide layer, the bandgap narrowing is determined by the injected carrier concentration rather than by the doping level.

  2. Cryogenic temperature performance of heavily irradiated silicon detectors

    CERN Document Server

    Da Vià, C; Casagrande, L; Granata, V; Palmieri, V G

    1999-01-01

    The charge collection efficiency (CCE) of silicon detectors, previously irradiated with high neutron fluences, has been measured at 4.2, 77 and 195 K. The CCE recovery measured after 1.2x10 sup 1 sup 4 n/cm sup 2 is 100% at a bias voltage of 50 V. For 2x10 sup 1 sup 5 n/cm sup 2 the most probable signal collected for minimum ionising particles is 13 000 electrons, corresponding to 50% CCE, at a bias voltage of 250 V. Negligible difference has been observed between 77 and 4.2 K operation, while no recovery was measurable at 195 K. The timing of the signal was measured to be better than 5 ns. The samples were irradiated and stored at room temperature and cooled only when operated. Reproducible results were obtained after several weeks and several thermal cycles. (author)

  3. Thermal diffusion boron doping of single-crystal natural diamond

    Science.gov (United States)

    Seo, Jung-Hun; Wu, Henry; Mikael, Solomon; Mi, Hongyi; Blanchard, James P.; Venkataramanan, Giri; Zhou, Weidong; Gong, Shaoqin; Morgan, Dane; Ma, Zhenqiang

    2016-05-01

    With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

  4. Band-to-band and free-carrier absorption coefficients in heavily doped silicon at 4 K and at room temperature

    Science.gov (United States)

    Jain, S. C.; Nathan, A.; Briglio, D. R.; Roulston, D. J.; Selvakumar, C. R.; Yang, T.

    1991-03-01

    Using the raw experimental data of Schmid and the known values of band-gap narrowing and Fermi energies for different doping concentrations, the band-to-band and free-carrier absorption coefficients in heavily doped Si are calculated. The behavior of boron-doped Si is different from that of arsenic doped Si. Near threshold, our values of the absorption coefficients are significantly different from those derived by Schmid from the same data. The enhancement of band-to-band transitions due to impurity or free-carrier scattering is not as important in heavily doped Si as in heavily doped Ge. Numerically fitted empirical expressions for the absorption coefficients, suitable for computer simulation studies of opto-electronic devices are given.

  5. Denuded Zone Formation in Germanium Codoped Heavily Phosphorus-Doped Czochralski Silicon

    Institute of Scientific and Technical Information of China (English)

    LIN Li-Xia; CHEN Jia-He; WU Peng; ZENG Yu-Heng; MA Xiang-Yang; YANG De-Ren

    2011-01-01

    The formation of a denuded zone(DZ) by conventional furnace annealing(CFA) and rapid thermal annealing (RTA) based denudation processing is investigated and the gettering of copper(Cu) atoms in germanium co-doped heavily phosphorus-doped Czochralski(GHPCZ)silicon wafers is evaluated. It is suggested that both a good quality defect-free DZ with a suitable width in the sub-surface area and a high density bulk micro-defect(BMD)region could be formed in heavily phosphorus-doped Czochralski(HPCZ)silicon and GHPCZ silicon wafers.This is ascribed to the formation of phosphorus-vacancy(P-V) related complexes and germanium-vacancy(GeV) related complexes. Compared with HPCZ silicon, the DZ width is wider in the GHPCZ silicon sample with CFA-based denudation processing but narrower in the one with two-step RTA pretreatments. These phenomena are ascribed to the enhancing effect of germanium on oxygen out-diffusion movement and oxygen precipitate nucleation, respectively. Furthermore, fairly clean DZs near the surface remain in both the HPCZ and GHPCZ silicon wafers after Cu in-diffusion, except for the HPCZ silicon wafer which underwent denudation processing with a CFA pretreatment, suggesting that germanium doping could improve the gettering of Cu contamination.

  6. Electrical band-gap narrowing in n- and p-type heavily doped silicon at 300 K

    Science.gov (United States)

    Van Cong, H.; Brunet, S.

    1986-09-01

    Based on previous results band-gap narrowing in heavily doped silicon at 300 K is investigated and expressed in terms of impurity size-and-doping effects. The results obtained for n- and p-type heavily doped silicon are compared with other theories and experiments.

  7. Hydrogen adsorption on boron doped graphene: an {\\it ab initio} study

    OpenAIRE

    Miwa, R. H.; Martins, T B; Fazzio, A.

    2007-01-01

    The electronic and structural properties of (i) boron doped graphene sheets, and (ii) the chemisorption processes of hydrogen adatoms on the boron doped graphene sheets have been examined by {\\it ab initio} total energy calculations.

  8. Measurement of carrier transport and recombination parameter in heavily doped silicon

    Science.gov (United States)

    Swanson, Richard M.

    1986-01-01

    The minority carrier transport and recombination parameters in heavily doped bulk silicon were measured. Both Si:P and Si:B with bulk dopings from 10 to the 17th and 10 to the 20th power/cu cm were studied. It is shown that three parameters characterize transport in bulk heavily doped Si: the minority carrier lifetime tau, the minority carrier mobility mu, and the equilibrium minority carrier density of n sub 0 and p sub 0 (in p-type and n-type Si respectively.) However, dc current-voltage measurements can never measure all three of these parameters, and some ac or time-transient experiment is required to obtain the values of these parameters as a function of dopant density. Using both dc electrical measurements on bipolar transitors with heavily doped base regions and transients optical measurements on heavily doped bulk and epitaxially grown samples, lifetime, mobility, and bandgap narrowing were measured as a function of both p and n type dopant densities. Best fits of minority carrier mobility, bandgap narrowing and lifetime as a function of doping density (in the heavily doped range) were constructed to allow accurate modeling of minority carrier transport in heavily doped Si.

  9. Band-gap narrowing in heavily doped silicon: A comparison of optical and electrical data

    Science.gov (United States)

    Wagner, Joachim; del Alamo, Jesús A.

    1988-01-01

    The band-gap narrowing in heavily doped silicon has been studied by optical techniques—namely, photoluminescence and photoluminescence excitation spectroscopy—and by electrical measurements on bipolar transistors. The optical experiments give a consistent set of data for the band-gap narrowing in n- and p-type material at low temperatures as well as at room temperature. A good agreement is found between the optical and electrical data removing the discrepancies existing so far in the literature.

  10. Built-in voltage of a silicon p-n junction having a heavily doped region

    Science.gov (United States)

    Sinha, Amitabha

    1984-01-01

    An analysis of the built-in voltage of a silicon p-n junction has been done, taking into account the band-gap narrowing effects in the heavily doped region. It has been observed that much lower values of built-in voltage are obtained when heavy doping effects are considered. Also, the magnitude of built-in voltage decreases when the temperature of the p-n junction is increased.

  11. 11B nuclear magnetic resonance in boron-doped diamond

    Directory of Open Access Journals (Sweden)

    Miwa Murakami, Tadashi Shimizu, Masataka Tansho and Yoshihiko Takano

    2008-01-01

    Full Text Available This review summarizes recent results obtained by 11B solid-state nuclear magnetic resonance (NMR on boron-doped diamond, grown by the high-pressure high-temperature (HPHT or chemical vapor deposition techniques. Simple single-pulse experiments as well as advanced two-dimensional NMR experiments were applied to the boron sites in diamond. It is shown that magic-angle spinning at magnetic fields above 10 T is suitable for observation of high-resolution 11B spectra of boron-doped diamond. For boron-doped HPHT diamonds, the existence of the excess boron that does not contribute to electrical conductivity was confirmed and its 11B NMR signal was characterized. The point-defect structures (B+H complexes and -B-B-/-B-C-B- clusters, postulated previously for the excess boron, were discarded and graphite-like structures were assigned instead.

  12. Characterization and photocatalytic activity of boron-doped TiO2 thin films prepared by liquid phase deposition technique

    Indian Academy of Sciences (India)

    Noor Shahina Begum; H M Farveez Ahmed; O M Hussain

    2008-10-01

    Boron doped TiO2 thin films have been successfully deposited on glass substrate and silicon wafer at 30°C from an aqueous solution of ammonium hexa-fluoro titanate and boron trifluoride by liquid phase deposition technique. The boric acid was used as an – scavenger. The resultant films were characterized by XRD, EDAX, UV and microstructures by SEM. The result shows the deposited film to be amorphous which becomes crystalline between 400 and 500°C. The EDAX and XRD data confirm the existence of boron atom in TiO2 matrix and a small peak corresponding to rutile phase was also found. Boron doped TiO2 thin films can be used as photocatalyst for the photodegradation of chlorobenzene which is a great environmental hazard. It was found that chlorobenzene undergoes degradation efficiently in presence of boron doped TiO2 thin films by exposing its aqueous solution to visible light. The photocatalytic activity increases with increase in the concentration of boron.

  13. Band-gap narrowing in the space-charge region of heavily doped silicon diodes

    Science.gov (United States)

    Lowney, Jeremiah R.

    1985-02-01

    The densities of states of the valence and conduction bands have been calculated in the space-charge region of a heavily doped linearly graded p- n junction silicon diode. Both the donor and acceptor densities were chosen to be equal to 6.2 × 10 18 cm -3. The results showed the emergence of band tails which penetrated deeply into the energy gap and accounted for the band-gap narrowing observed in such a diode by analysis of capacitance vs voltage measurements of the built-in voltage.

  14. Band-gap narrowing in heavily doped silicon at 20 and 300 K studied by photoluminescence

    Science.gov (United States)

    Wagner, Joachim

    1985-07-01

    The band-gap shrinkage in heavily doped n- and p-type silicon is studied by photoluminescence both at low temperatures (20 K) and at room temperature (300 K). A line-shape analysis was performed to determine the indirect band-gap energy from the emission spectra. Within the experimental accuracy the same band-gap shift is observed at room temperature as at low temperature. The present results are compared with experimental data from other optical studies and with theoretical calculations.

  15. Spin relaxation through lateral spin transport in heavily doped n -type silicon

    Science.gov (United States)

    Ishikawa, M.; Oka, T.; Fujita, Y.; Sugiyama, H.; Saito, Y.; Hamaya, K.

    2017-03-01

    We experimentally study temperature-dependent spin relaxation including lateral spin diffusion in heavily doped n -type silicon (n+-Si ) layers by measuring nonlocal magnetoresistance in small-sized CoFe/MgO/Si lateral spin-valve (LSV) devices. Even at room temperature, we observe large spin signals, 50-fold the magnitude of those in previous works on n+-Si . By measuring spin signals in LSVs with various center-to-center distances between contacts, we reliably evaluate the temperature-dependent spin diffusion length (λSi) and spin lifetime (τSi). We find that the temperature dependence of τSi is affected by that of the diffusion constant in the n+-Si layers, meaning that it is important to understand the temperature dependence of the channel mobility. A possible origin of the temperature dependence of τSi is discussed in terms of the recent theories by Dery and co-workers.

  16. A simple method of calculating the minority-carrier current in heavily doped silicon

    Science.gov (United States)

    Kleefstra, M.

    1985-10-01

    It is shown that the calculation of the one-dimensional minority-carrier current density in heavily doped silicon can be described by two coupled differential equations of the first order. These equations are derived with a minimum of assumptions and approximations and without the explicit use of an electric field. The relevant input parameters to these equations are the product of the equilibrium hole density with the diffusion coefficient and the product of the equilibrium hole density with the reciprocal value of the lifetime. These equations can very easily be solved numerically and the solution gives the minority-carrier density and the current density as a function of space coordinate. It is shown that values of the band gap narrowing cannot be derived from current measurements alone.

  17. Double peak electric field distortion in heavily irradiated silicon strip detectors

    CERN Document Server

    Eremin, Vladimir; Roe, Shaun; Ruggiero, G; Verbitskaya, E

    2004-01-01

    Non-uniform distribution of the electric field outlined as double peak distortion (DPD) is considered for heavily irradiated silicon strip detectors, which were developed for the CERN-ATLAS semiconductor tracker. DPD originates from the non-uniform accumulation of electrons and holes from the bulk generated current that are captured by radiation induced defects: deep acceptors and donors with mid-gap energy levels. This corresponds to the formation of the low electric field region in the detector central part that consequently will delay charge collection. The electric field distributions at different reverse biases, fluences and detector operational temperatures are calculated using a one-dimensional Poisson equation as it was done earlier for pad detectors. It has been shown that due to the electric field focusing at the strips the DPD effect is more pronounced for strip detectors as compared to that in pad detectors. The double peak electric field distribution is evinced experimentally in current pulse res...

  18. In vivo biocompatibility of boron doped and nitrogen included conductive-diamond for use in medical implants.

    Science.gov (United States)

    Garrett, David J; Saunders, Alexia L; McGowan, Ceara; Specks, Joscha; Ganesan, Kumaravelu; Meffin, Hamish; Williams, Richard A; Nayagam, David A X

    2016-01-01

    Recently, there has been interest in investigating diamond as a material for use in biomedical implants. Diamond can be rendered electrically conducting by doping with boron or nitrogen. This has led to inclusion of boron doped and nitrogen included diamond elements as electrodes and/or feedthroughs for medical implants. As these conductive device elements are not encapsulated, there is a need to establish their clinical safety for use in implants. This article compares the biocompatibility of electrically conducting boron doped diamond (BDD) and nitrogen included diamond films and electrically insulating poly crystalline diamond films against a silicone negative control and a BDD sample treated with stannous octoate as a positive control. Samples were surgically implanted into the back muscle of a guinea pig for a period of 4-15 weeks, excised and the implant site sectioned and submitted for histological analysis. All forms of diamond exhibited a similar or lower thickness of fibrotic tissue encapsulating compared to the silicone negative control samples. All forms of diamond exhibited similar or lower levels of acute, chronic inflammatory, and foreign body responses compared to the silicone negative control indicating that the materials are well tolerated in vivo.

  19. Effect of thermal annealing on the optical and electrical properties of boron doped a-SiO{sub x}:H for thin-film silicon solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Park, Jinjoo [College of Information and Communication Engineering, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Shin, Chonghoon [Department of Energy Science, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Lee, Sunwha [College of Information and Communication Engineering, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Applied Optics and Energy Research Group, Korea Institute of Industrial Technology, Oryong-dong 1110-9, Buk-ku, Gwangju 506-824 (Korea, Republic of); Kim, Sunbo; Jung, Junhee; Balaji, Nagarajan [Department of Energy Science, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Dao, Vinh Ai; Lee, Youn-Jung [College of Information and Communication Engineering, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Yi, Junsin, E-mail: yi@yurim.skku.ac.kr [College of Information and Communication Engineering, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of)

    2015-07-31

    The p-type layer in a p-i-n thin-film solar cell plays a crucial role in determining efficiency. The requirements for p-type layer films are high optical band gap (E{sub g}), narrow valence band tail to minimize optical absorption, high dark conductivity, and low activation energy to reduce the parasitic series resistance of the solar cell. We investigated the effects of temperature during film growth and post-deposition thermal annealing on the optical and electronic properties of p-type amorphous silicon oxide films (p-a-SiO{sub x}:H) for thin-film silicon solar cell applications. The activation energy of thermally annealed p-a-SiO{sub x}:H film prepared at low substrate temperature decreased from 0.72 eV to 0.56 eV with similar E{sub g}. Our improvements are explained in the changed ratio of conjugation with the three- and four-fold coordinated boron atoms by the shift of the B (1 s) X-ray photoelectron spectrum. Taking into account the reversible electrical change by thermal annealing while maintaining high optical properties, we propose necessary process-procedure conditions for obtaining high photovoltaic performance in thin-film-Si solar cells with high-quality p-a-SiO{sub x}:H. We carried out device modeling of p-i-n junction amorphous silicon solar cells by employing a thermal annealing effect on p-type a-SiO{sub x}:H layer, using an advanced semiconductor analysis simulator. Due to reduced E{sub a} with high E{sub g} of p-type a-SiO{sub x}:H layer after thermal annealing, the solar cell performance of the open circuit voltage, fill factor, and conversion efficiency improved by 11.1%, 60.42%, and 53.75%, respectively. - Highlights: • We investigated the effects thermal annealing on p-a-SiO{sub x}:H films. • The E{sub a} property of annealed p-a-SiO{sub x}:H film prepared at low temperature decreased. • The simulated performance of solar cell with annealed p-type a-SiO{sub x}:H improved.

  20. Friction and Wear Performance of Boron Doped, Undoped Microcrystalline and Fine Grained Composite Diamond Films

    Institute of Scientific and Technical Information of China (English)

    WANG Xinchang; WANG Liang; SHEN Bin; SUN Fanghong

    2015-01-01

    Chemical vapor deposition (CVD) diamond films have attracted more attentions due to their excellent mechanical properties. Whereas as-fabricated traditional diamond films in the previous studies don’t have enough adhesion or surface smoothness, which seriously impact their friction and wear performance, and thus limit their applications under extremely harsh conditions. A boron doped, undoped microcrystalline and fine grained composite diamond (BD-UM-FGCD) film is fabricated by a three-step method adopting hot filament CVD (HFCVD) method in the present study, presenting outstanding comprehensive performance, including the good adhesion between the substrate and the underlying boron doped diamond (BDD) layer, the extremely high hardness of the middle undoped microcrystalline diamond (UMCD) layer, as well as the low surface roughness and favorable polished convenience of the surface fine grained diamond (FGD) layer. The friction and wear behavior of this composite film sliding against low-carbon steel and silicon nitride balls are studied on a ball-on-plate rotational friction tester. Besides, its wear rate is further evaluated under a severer condition using an inner-hole polishing apparatus, with low-carbon steel wire as the counterpart. The test results show that the BD-UM-FGCD film performs very small friction coefficient and great friction behavior owing to its high surface smoothness, and meanwhile it also has excellent wear resistance because of the relatively high hardness of the surface FGD film and the extremely high hardness of the middle UMCD film. Moreover, under the industrial conditions for producing low-carbon steel wires, this composite film can sufficiently prolong the working lifetime of the drawing dies and improve their application effects. This research develops a novel composite diamond films owning great comprehensive properties, which have great potentials as protecting coatings on working surfaces of the wear-resistant and anti

  1. Friction and wear performance of boron doped, undoped microcrystalline and fine grained composite diamond films

    Science.gov (United States)

    Wang, Xinchang; Wang, Liang; Shen, Bin; Sun, Fanghong

    2015-01-01

    Chemical vapor deposition (CVD) diamond films have attracted more attentions due to their excellent mechanical properties. Whereas as-fabricated traditional diamond films in the previous studies don't have enough adhesion or surface smoothness, which seriously impact their friction and wear performance, and thus limit their applications under extremely harsh conditions. A boron doped, undoped microcrystalline and fine grained composite diamond (BD-UM-FGCD) film is fabricated by a three-step method adopting hot filament CVD (HFCVD) method in the present study, presenting outstanding comprehensive performance, including the good adhesion between the substrate and the underlying boron doped diamond (BDD) layer, the extremely high hardness of the middle undoped microcrystalline diamond (UMCD) layer, as well as the low surface roughness and favorable polished convenience of the surface fine grained diamond (FGD) layer. The friction and wear behavior of this composite film sliding against low-carbon steel and silicon nitride balls are studied on a ball-on-plate rotational friction tester. Besides, its wear rate is further evaluated under a severer condition using an inner-hole polishing apparatus, with low-carbon steel wire as the counterpart. The test results show that the BD-UM-FGCD film performs very small friction coefficient and great friction behavior owing to its high surface smoothness, and meanwhile it also has excellent wear resistance because of the relatively high hardness of the surface FGD film and the extremely high hardness of the middle UMCD film. Moreover, under the industrial conditions for producing low-carbon steel wires, this composite film can sufficiently prolong the working lifetime of the drawing dies and improve their application effects. This research develops a novel composite diamond films owning great comprehensive properties, which have great potentials as protecting coatings on working surfaces of the wear-resistant and anti

  2. High temperature surface Brillouin scattering study of mechanical properties of boron-doped epitaxial polysilicon

    Directory of Open Access Journals (Sweden)

    B. A. Mathe

    2017-02-01

    Full Text Available A study of the mechanical properties of a boron-doped epitaxial polysilicon layer deposited on a Si (100 substrate specimen has been carried out by surface Brillouin scattering at high temperatures. This type of specimen is widely used in micro-electro-mechanical systems (MEMS. By accumulating spectra with the Rayleigh mode and the Lamb continuum the isotropic elastic constants C44 and C11 were obtained, from which the values of the bulk, shear and Young’s moduli and Poisson’s ratio for the layer were determined over a range of temperatures from 20 °C to 110 °C. By contrast, an examination of the literature on polycrystalline silicon shows that other methods each provide a limited range of the above properties and thus additional experiments and techniques were needed. The SBS method is applicable to other polycrystalline materials such as silicon carbide, silicon nitride, silicon germanium and amorphous diamond that have also been used for MEMS applications.

  3. Effects of nanoscale features on infrared radiative properties of heavily doped silicon complex gratings

    Institute of Scientific and Technical Information of China (English)

    HSU; PeiFeng

    2010-01-01

    The infrared radiative properties of one heavily doped silicon complex grating and its corresponding four modified complex gratings with attached features at transverse magnetic wave incidence were numerically investigated by employing the finite-difference time-domain method.For the complex grating,by properly choosing the carrier concentration and geometry,it exhibited a broadband absorptance peak at wavelengths between 7 and 12μm resulting from the excitation of surface plasmon polaritons.As for the four modified complex gratings,though absorptance spectra of the gratings almost remained unchanged, their locations shifted towards longer wavelengths.Meanwhile,the spectral absorptance peaks of two modified complex gratings were wider than that of the grating without attached features.Such broadened peaks could be partly attributed to the cavity resonance within the grating structures demonstrated by the electromagnetic fields and Poynting vectors plots.Finally,through comparing the spectral absorptances of complex gratings with two symmetrical square features in three sizes,it was shown that the peak wavelength shifted toward longer wavelengths with enlarged feature size.This work theoretically laid a foundation for the optimized design and application of the infrared detector with high performance.

  4. Metal-bosonic insulator-superconductor transition in boron-doped granular diamond.

    Science.gov (United States)

    Zhang, Gufei; Zeleznik, Monika; Vanacken, Johan; May, Paul W; Moshchalkov, Victor V

    2013-02-15

    In a variety of superconductors, mostly in two-dimensional (2D) and one-dimensional (1D) systems, the resistive superconducting transition R(T) demonstrates in many cases an anomalous narrow R(T) peak just preceding the onset of the superconducting state R=0 at T(c). The amplitude of this R(T) peak in 1D and 2D systems ranges from a few up to several hundred percent. In three-dimensional (3D) systems, however, the R(T) peak close to T(c) is rarely observed, and it reaches only a few percent in amplitude. Here we report on the observation of a giant (∼1600%) and very narrow (∼1  K) resistance peak preceding the onset of superconductivity in heavily boron-doped diamond. This anomalous R(T) peak in a 3D system is interpreted in the framework of an empirical model based on the metal-bosonic insulator-superconductor transitions induced by a granularity-correlated disorder in heavily doped diamond.

  5. Chemical Vapor Deposition of Phosphorous- and Boron-Doped Graphene Using Phenyl-Containing Molecules.

    Science.gov (United States)

    Mekan Ovezmyradov; Magedov, Igor V; Frolova, Liliya V; Chandler, Gary; Garcia, Jill; Bethke, Donald; Shaner, Eric A; Kalugin, Nikolai G

    2015-07-01

    Simultaneous chemical vapor deposition (CVD) of graphene and "in-situ" phosphorous or boron doping of graphene was accomplished using Triphenylphosphine (TPP) and 4-Methoxyphenylboronic acid (4-MPBA). The TPP and 4-MPBA molecules were sublimated and supplied along with CH4 molecules during graphene growth at atmospheric pressure. The grown graphene samples were characterized using Raman spectroscopy. Phosphorous and boron presence in phosphorous and boron doped graphene was confirmed with Auger electron spectroscopy. The possibility of obtaining phosphorous and boron doped graphene using solid-source molecule precursors via CVD can lead to an easy and rapid production of modified large area graphene.

  6. Photoluminescence Characterization of Boron-doped Si Layers Grown by Molecular Beam Epitaxy

    Institute of Scientific and Technical Information of China (English)

    LI Cheng; LAI Hong-kai; CHEN Song-yan

    2005-01-01

    Photoluminescence spectra were used to characterize the boron-doped Si layers grown by molecular beam epitaxy using HBO2 as the doping source. The influence of boron doping concentration on the dislocation-related photoluminescence spectra of molecular beam epitaxy Si layers annealed at 900 ℃ was studied with different doping concentrations and growth temperature. The broad photoluminescence band(from 0.75 eV to 0.90 eV) including D1 and D2 bands was associated with high boron doping concentration in the samples, while D3 and D4 bands might be related to oxygen precipitates.

  7. Electron–phonon heat transport and electronic thermal conductivity in heavily doped silicon-on-insulator film

    OpenAIRE

    Kivinen, P; Savin, A.; Zgirski, M.; Törmä, P.; Pekola, Jukka P; Prunnila, M.; Ahopelto, J.

    2003-01-01

    Electron–phonon interaction and electronic thermal conductivity have been investigated in heavily doped silicon at subKelvin temperatures. The heat flow between electron and phonon systems is found to be proportional to T6. Utilization of a superconductor–semiconductor–superconductor thermometer enables a precise measurement of electron and substrate temperatures. The electronic thermal conductivity is consistent with the Wiedemann–Franz law. Peer reviewed

  8. Boron doped diamond biotechnology: from sensors to neurointerfaces.

    Science.gov (United States)

    Hébert, C; Scorsone, E; Bendali, A; Kiran, R; Cottance, M; Girard, H A; Degardin, J; Dubus, E; Lissorgues, G; Rousseau, L; Mailley, P; Picaud, S; Bergonzo, P

    2014-01-01

    Boron doped nanocrystalline diamond is known as a remarkable material for the fabrication of sensors, taking advantage of its biocompatibility, electrochemical properties, and stability. Sensors can be fabricated to directly probe physiological species from biofluids (e.g. blood or urine), as will be presented. In collaboration with electrophysiologists and biologists, the technology was adapted to enable structured diamond devices such as microelectrode arrays (MEAs), i.e. common electrophysiology tools, to probe neuronal activity distributed over large populations of neurons or embryonic organs. Specific MEAs can also be used to build neural prostheses or implants to compensate function losses due to lesions or degeneration of parts of the central nervous system, such as retinal implants, which exhibit real promise as biocompatible neuroprostheses for in vivo neuronal stimulations. New electrode geometries enable high performance electrodes to surpass more conventional materials for such applications.

  9. Boron-Doped Diamond Electrode in Sodium Sulphate Medium

    Directory of Open Access Journals (Sweden)

    Codruţa Cofan

    2011-01-01

    Full Text Available Differential pulse voltammetry (DPV and chronoamperometry (CA were used to detect and determine acetylsalicylic acid (ASA at a mildly oxidized boron-doped diamond (BDD electrode in a neutral sodium sulphate solution as supporting electrolyte. ASA determination in unbuffered medium was achieved using neutralized standard and real samples. Over the concentration range of 0.01 mM–0.1 mM, linear calibration plots of anodic current peaks in DPV and anodic currents in CA experiments versus concentration were obtained with very high correlation coefficients and good sensitivity values. The limits of detection were situated around 1 μM. The association of DPV and CA techniques with standard addition method represented a suitable option for the determination of ASA in real samples such as pharmaceutical formulations.

  10. Screening metal nanoparticles using boron-doped diamond microelectrodes

    Energy Technology Data Exchange (ETDEWEB)

    Ivandini, Tribidasari A., E-mail: ivandini.tri@sci.ui.ac.id; Rangkuti, Prasmita K. [Department of Chemistry, FMIPA, Universitas Indonesia, Kampus UI Depok (Indonesia); Einaga, Yasuaki [Department of Chemistry, Faculty of Science and Technology, Keio University (Japan); JST ACCEL, 3-14-1 Hiyoshi, Yokohama 223-8522 (Japan)

    2016-04-19

    Boron-doped diamond (BDD) microelectrodes were used to observe the correlation between electrocatalytic currents caused by individual Pt nanoparticle (Pt-np) collisions at the electrode. The BDD microelectrodes, ∼20 µm diameter and ∼2 µm particle size, were fabricated at the surface of tungsten wires. Pt-np with a size of 1 to 5 nm with agglomerations up to 20 nm was used for observation. The electrolytic currents were observed via catalytic reaction of 15 mM hydrazine in 50 mM phosphate buffer solution at Pt-np at 0.4 V when it collides with the surface of the microelectrodes. The low current noise and wider potential window in the measurements using BDD microelectrode produced a better results, which represents a better correlation to the TEM result of the Pt-np, compared to when gold microelectrodes was used.

  11. High-pressure behavior of superconducting boron-doped diamond

    Science.gov (United States)

    Abdel-Hafiez, Mahmoud; Kumar, Dinesh; Thiyagarajan, R.; Zhang, Q.; Howie, R. T.; Sethupathi, K.; Volkova, O.; Vasiliev, A.; Yang, W.; Mao, H. K.; Rao, M. S. Ramachandra

    2017-05-01

    This work investigates the high-pressure structure of freestanding superconducting (Tc=4.3 K) boron-doped diamond (BDD) and how it affects the electronic and vibrational properties using Raman spectroscopy and x-ray diffraction in the 0-30 GPa range. High-pressure Raman scattering experiments revealed an abrupt change in the linear pressure coefficients, and the grain boundary components undergo an irreversible phase change at 14 GPa. We show that the blueshift in the pressure-dependent vibrational modes correlates with the negative pressure coefficient of Tc in BDD. The analysis of x-ray diffraction data determines the equation of state of the BDD film, revealing a high bulk modulus of B0=510 ±28 GPa. The comparative analysis of high-pressure data clarified that the s p2 carbons in the grain boundaries transform into hexagonal diamond.

  12. Fabrication and Characterization of N-Type Zinc Oxide/P-Type Boron Doped Diamond Heterojunction

    National Research Council Canada - National Science Library

    Marián Marton; Miroslav Mikolášek; Jaroslav Bruncko; Ivan Novotný; Tibor Ižák; Marian Vojs; Halyna Kozak; Marián Varga; Anna Artemenko; Alexander Kromka

    2015-01-01

    .... Semiconducting boron doped diamond (BDD) thin films were grown on Si and UV grade silica glass substrates by HFCVD method with various boron concentration in the gas mixture. Doped zinc oxide (ZnO:Al, ZnO:Ge...

  13. High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties

    OpenAIRE

    Da-Young Yeom; Woojin Jeon; Nguyen Dien Kha Tu; So Young Yeo; Sang-Soo Lee; Bong June Sung; Hyejung Chang; Jung Ah Lim; Heesuk Kim

    2015-01-01

    For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of ...

  14. Characterization of boron doped diamond-like carbon film by HRTEM

    Energy Technology Data Exchange (ETDEWEB)

    Li, X.J., E-mail: lixj@alum.imr.ac.cn [College of Material Science and Engineering, Key Laboratory of Advanced Structural Materials, Ministry of Education, Changchun University of Technology, Changchun 130012 (China); He, L.L., E-mail: llhe@imr.ac.cn [Shenyang National Lab of Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China); Li, Y.S. [Department of Mechanical Engineering, University of Saskatchewan, Saskatoon, SK S7N 5A9 (Canada); Plasma Physics Laboratory, University of Saskatchewan, Saskatoon, SK S7N 5E2 (Canada); Yang, Q. [Department of Mechanical Engineering, University of Saskatchewan, Saskatoon, SK S7N 5A9 (Canada); Hirose, A. [Plasma Physics Laboratory, University of Saskatchewan, Saskatoon, SK S7N 5E2 (Canada)

    2015-12-01

    Graphical abstract: - Highlights: • The microstructure of B-DLC film is studied by HRTEM in cross-sectional observation. • Many crystalline nanoparticles dispersed in the amorphous matrix film are observed. • Through composition and structure analysis, the nanoparticles are identified as B{sub 2}O. • The work implies the doped B element exists as oxide state in the B-DLC film. - Abstract: Boron doped diamond-like carbon (B-DLC) film was synthesized on silicon (1 0 0) wafer by biased target ion beam deposition. High-resolution transmission electron microscopy (HRTEM) is employed to investigate the microstructure of the B-DLC thin film in cross-sectional observation. Many crystalline nanoparticles randomly dispersed and embedded in the amorphous matrix film are observed. Through chemical compositional analysis of the B-DLC film, some amount of O element is confirmed to be contained. And also, some nanoparticles with near zone axes are indexed, which are accordance with B{sub 2}O phase. Therefore, the contained O element causing the B element oxidized is proposed, resulting in the formation of the nanoparticles. Our work indicates that in the B-DLC film a significant amount of the doped B element exists as boron suboxide nanoparticles.

  15. Local impedance imaging of boron-doped polycrystalline diamond thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zieliński, A.; Ryl, J.; Burczyk, L.; Darowicki, K. [Department of Electrochemistry, Corrosion and Material Engineering, Gdansk University of Technology, 11/12 Narutowicza St., 80-233 Gdansk (Poland); Bogdanowicz, R., E-mail: rbogdan@eti.pg.gda.pl [Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications and Informatics, Gdansk University of Technology, 11/12 G. Narutowicza St., 80-233 Gdansk (Poland)

    2014-09-29

    Local impedance imaging (LII) was used to visualise surficial deviations of AC impedances in polycrystalline boron-doped diamond (BDD). The BDD thin film electrodes were deposited onto the highly doped silicon substrates via microwave plasma-enhanced CVD. The studied boron dopant concentrations, controlled by the [B]/[C] ratio in plasma, ranged from 1 × 10{sup 16} to 2 × 10{sup 21} atoms cm{sup −3}. The BDD films displayed microcrystalline structure, while the average size of crystallites decreased from 1 to 0.7 μm with increasing [B]/[C] ratios. The application of LII enabled a direct and high-resolution investigation of local distribution of impedance characteristics within the individual grains of BDD. Such an approach resulted in greater understanding of the microstructural control of properties at the grain level. We propose that the obtained surficial variation of impedance is correlated to the areas of high conductance which have been observed at the grain boundaries by using LII. We also postulate that the origin of high conductivity is due to either preferential boron accumulation, the presence of defects, or sp{sup 2} regions in the intragrain regions. The impedance modulus recorded by LII was in full agreement with the bulk impedance measurements. Both variables showed a decreasing trend with increasing [B]/[C] ratios, which is consistent with higher boron incorporation into BDD film.

  16. Formation of precipitates in heavily boron doped 4H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Linnarsson, M.K. [Royal Institute of Technology, Lab of Materials and Semiconductor Physics, P.O. Box E229, SE-164 40 Kista-Stockhom (Sweden)]. E-mail: marga@kth.se; Janson, M.S. [Royal Institute of Technology, Lab of Materials and Semiconductor Physics, P.O. Box E229, SE-164 40 Kista-Stockhom (Sweden); Nordell, N. [Royal Institute of Technology, Lab of Materials and Semiconductor Physics, P.O. Box E229, SE-164 40 Kista-Stockhom (Sweden); Wong-Leung, J. [Australian National University, Department of Electronics Material Engineering, Research School of Physical Sciences and Engineering, Canberra, ACT 0200 (Australia); Schoener, A. [ACREO AB, P.O. Box E236, SE-164 40 Kista-Stockholm (Sweden)

    2006-05-30

    Secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) are utilized to study precipitation and the solubility of B in 4H-SiC epitaxial layers super saturated with B. Heat treatments are performed in Ar atmosphere in an rf-heated furnace at temperatures between 1700 and 2000 deg. C. SIMS ion images, and TEM micrographs reveal the formation of two types of precipitates where the larger, more thermally stable one is suggested to be B{sub 4}C. The boron solubility is determined from SIMS depth profiles and is shown to follow the Arrhenius expression: 7.1 x 10{sup 22} exp(-1.4 eV/k {sub B} T) cm{sup -3} over the studied temperature range.

  17. Fabrication and characterization of micro-band boron-doped diamond electrode for an application in adenosine phosphates sensor

    Science.gov (United States)

    Prayikaputri, P. U.; Gunlazuardi, J.; Ivandini, T. A.

    2017-04-01

    Micro-band electrode was successfully fabricated by lamination method through sealing a piece of boron-doped diamond film inside a sandwich of two insulating plates, namely Teflon and silicon rubber as the gaskets. Characterization was performed using Raman and XPS spectra of the BDD film, while the fabricated micro-band was characterized by analyzing its SEM image. The electrode was examined for cyclic voltammetry of adenosine triphosphate solution, where an oxidation peak at +0.9 V vs. Ag/AgCl can be observed. The influence of scan rate and pH was also studied, in which pH 2 was selected as the optimum pH. The diffusion coefficient of 0.1 mM ATP at micro-band electrode was 3.84 x 10-8 m2/s, while the effective surface of the micro-band BDD electrode was 8.72 x 10-14 m2.

  18. TEM Observation of the Dislocations Nucleated from Cracks inside Lightly or Heavily Doped Czochralski Silicon Wafers

    Directory of Open Access Journals (Sweden)

    Seiji Shiba

    2011-01-01

    Full Text Available The crack propagation from the indent introduced with a Vickers hardness tester at room temperature and the dislocation nucleation from the cracks at 900°C inside lightly boron (B, heavily B, or heavily arsenic (As doped Czochralski (CZ Si wafers were investigated with transmission electron microscopy (TEM observations. It was found that the dopant concentration and the dopant type did not significantly affect the crack propagation and the dislocation nucleation. The slip dislocations with a density of about (0.8∼2.8 × 1013/cm3 were nucleated from the cracks propagated about 10 μm in depth. Furthermore, small dislocations that nucleated with very high density and without cracks were found around the indent introduced at 1000°C.

  19. Effect of layer thickness on device response of silicon heavily supersaturated with sulfur

    Directory of Open Access Journals (Sweden)

    David Hutchinson

    2016-05-01

    Full Text Available We report on a simple experiment in which the thickness of a hyperdoped silicon layer, supersaturated with sulfur by ion implantation followed by pulsed laser melting and rapid solidification, is systematically varied at constant average sulfur concentration, by varying the implantation energy, dose, and laser fluence. Contacts are deposited and the external quantum efficiency (EQE is measured for visible wavelengths. We posit that the sulfur layer primarily absorbs light but contributes negligible photocurrent, and we seek to support this by analyzing the EQE data for the different layer thicknesses in two interlocking ways. In the first, we use the measured concentration depth profiles to obtain the approximate layer thicknesses, and, for each wavelength, fit the EQE vs. layer thickness curve to obtain the absorption coefficient of hyperdoped silicon for that wavelength. Comparison to literature values for the hyperdoped silicon absorption coefficients [S.H. Pan et al. Applied Physics Letters 98, 121913 (2011] shows good agreement. Next, we essentially run this process in reverse; we fit with Beer’s law the curves of EQE vs. hyperdoped silicon absorption coefficient for those wavelengths that are primarily absorbed in the hyperdoped silicon layer, and find that the layer thicknesses obtained from the fit are in good agreement with the original values obtained from the depth profiles. We conclude that the data support our interpretation of the hyperdoped silicon layer as providing negligible photocurrent at high S concentrations. This work validates the absorption data of Pan et al. [Applied Physics Letters 98, 121913 (2011], and is consistent with reports of short mobility-lifetime products in hyperdoped layers. It suggests that for optoelectronic devices containing hyperdoped layers, the most important contribution to the above band gap photoresponse may be due to photons absorbed below the hyperdoped layer.

  20. Effect of layer thickness on device response of silicon heavily supersaturated with sulfur

    Science.gov (United States)

    Hutchinson, David; Mathews, Jay; Sullivan, Joseph T.; Akey, Austin; Aziz, Michael J.; Buonassisi, Tonio; Persans, Peter; Warrender, Jeffrey M.

    2016-05-01

    We report on a simple experiment in which the thickness of a hyperdoped silicon layer, supersaturated with sulfur by ion implantation followed by pulsed laser melting and rapid solidification, is systematically varied at constant average sulfur concentration, by varying the implantation energy, dose, and laser fluence. Contacts are deposited and the external quantum efficiency (EQE) is measured for visible wavelengths. We posit that the sulfur layer primarily absorbs light but contributes negligible photocurrent, and we seek to support this by analyzing the EQE data for the different layer thicknesses in two interlocking ways. In the first, we use the measured concentration depth profiles to obtain the approximate layer thicknesses, and, for each wavelength, fit the EQE vs. layer thickness curve to obtain the absorption coefficient of hyperdoped silicon for that wavelength. Comparison to literature values for the hyperdoped silicon absorption coefficients [S.H. Pan et al. Applied Physics Letters 98, 121913 (2011)] shows good agreement. Next, we essentially run this process in reverse; we fit with Beer's law the curves of EQE vs. hyperdoped silicon absorption coefficient for those wavelengths that are primarily absorbed in the hyperdoped silicon layer, and find that the layer thicknesses obtained from the fit are in good agreement with the original values obtained from the depth profiles. We conclude that the data support our interpretation of the hyperdoped silicon layer as providing negligible photocurrent at high S concentrations. This work validates the absorption data of Pan et al. [Applied Physics Letters 98, 121913 (2011)], and is consistent with reports of short mobility-lifetime products in hyperdoped layers. It suggests that for optoelectronic devices containing hyperdoped layers, the most important contribution to the above band gap photoresponse may be due to photons absorbed below the hyperdoped layer.

  1. Focused ion beam fabrication of boron-doped diamond ultramicroelectrodes.

    Science.gov (United States)

    Hu, Jingping; Holt, Katherine B; Foord, John S

    2009-07-15

    The fabrication of ultramicroelectrodes (UMEs) for analytical electrochemical applications has been explored, using boron-doped diamond as the active electrode material in an insulating coating formed by deposition of electrophoretic paint. Because of the rough nature of the diamond film, the property of such coatings that is normally exploited in the fabrication of UMEs, namely the tendency to retract automatically from sharp protrusions, cannot be used in the present instance. Instead focused ion beam (FIB) sputtering was employed to controllably produce UMEs with well-defined geometry, critical dimension of a few micrometers, and very thin insulating coatings. If the FIB machining is carried out at normal incidence to the diamond electrode surface, significant ion beam damage reduces the yield of successful electrodes. However, if a parallel machining geometry is employed, high yields of ultramicroelectrodes with a flat disk geometry can be obtained very reliably. The electrochemical properties of diamond UMEs are characterized. They show much lower background currents than the equivalent Pt or carbon fiber electrodes but more varied electrochemical response than macroscopic diamond electrodes.

  2. Elastic and mechanical softening in boron-doped diamond

    Science.gov (United States)

    Liu, Xiaobing; Chang, Yun-Yuan; Tkachev, Sergey N.; Bina, Craig R.; Jacobsen, Steven D.

    2017-01-01

    Alternative approaches to evaluating the hardness and elastic properties of materials exhibiting physical properties comparable to pure diamond have recently become necessary. The classic linear relationship between shear modulus (G) and Vickers hardness (HV), along with more recent non-linear formulations based on Pugh’s modulus extending into the superhard region (HV > 40 GPa) have guided synthesis and identification of novel superabrasives. These schemes rely on accurately quantifying HV of diamond-like materials approaching or potentially exceeding the hardness of the diamond indenter, leading to debate about methodology and the very definition of hardness. Elasticity measurements on such materials are equally challenging. Here we used a high-precision, GHz-ultrasonic interferometer in conjunction with a newly developed optical contact micrometer and 3D optical microscopy of indentations to evaluate elasticity-hardness relations in the ultrahard range (HV > 80 GPa) by examining single-crystal boron-doped diamond (BDD) with boron contents ranging from 50–3000 ppm. We observe a drastic elastic-mechanical softening in highly doped BDD relative to the trends observed for superhard materials, providing insight into elasticity-hardness relations for ultrahard materials. PMID:28233808

  3. Nucleosides and ODN electrochemical detection onto boron doped diamond electrodes.

    Science.gov (United States)

    Fortin, Elodie; Chane-Tune, Jérôme; Mailley, Pascal; Szunerits, Sabine; Marcus, Bernadette; Petit, Jean-Pierre; Mermoux, Michel; Vieil, Eric

    2004-06-01

    Boron doped diamond (BDD) is a promising material for electroanalytical chemistry due mainly to its chemical stability, its high electrical conductivity and to the large amplitude of its electroactive window in aqueous media. The latter feature allowed us to study the direct oxidation of the two electroactive nucleosides, guanosine and adenosine. The BDD electrode was first activated by applying high oxidizing potentials, allowing to increase anodically its working potential window through the oxidation of CH surface groups into hydroxyl and carbonyl terminations. Guanosine (1.2 V vs. Ag/AgCl) and adenosine (1.5 V vs. Ag/AgCl) could then be detected electrochemically with an acceptable signal to noise ratio. The electrochemical signature of each oxidizable base was assessed using differential pulse voltammetry (DPV), in solutions containing one or both nucleosides. These experiments pointed out the existence of adsorption phenomena of the oxidized products onto the diamond surface. Scanning electrochemical microscopy (SECM) was used to investigate these adsorption effects at the microscopic scale. The usefulness of BDD electrodes for the direct electrochemical detection of synthetic oligonucleotides is also evidenced.

  4. Boron Doped Nanocrystalline Diamond Films for Biosensing Applications

    Directory of Open Access Journals (Sweden)

    V. Petrák

    2011-01-01

    Full Text Available With the rise of antibiotic resistance of pathogenic bacteria there is an increased demand for monitoring the functionality of bacteria membranes, the disruption of which can be induced by peptide-lipid interactions. In this work we attempt to construct and disrupt supported lipid membranes (SLB on boron doped nanocrystalline diamond (B-NCD. Electrochemical Impedance Spectroscopy (EIS was used to study in situ changes related to lipid membrane formation and disruption by peptide-induced interactions. The observed impedance changes were minimal for oxidized B-NCD samples, but were still detectable in the low frequency part of the spectra. The sensitivity for the detection of membrane formation and disruption was significantly higher for hydrogenated B-NCD surfaces. Data modeling indicates large changes in the electrical charge when an electrical double layer is formed at the B-NCD/SLB interface, governed by ion absorption. By contrast, for oxidized B-NCD surfaces, these changes are negligible indicating little or no change in the surface band bending profile.

  5. Elastic and mechanical softening in boron-doped diamond.

    Science.gov (United States)

    Liu, Xiaobing; Chang, Yun-Yuan; Tkachev, Sergey N; Bina, Craig R; Jacobsen, Steven D

    2017-02-24

    Alternative approaches to evaluating the hardness and elastic properties of materials exhibiting physical properties comparable to pure diamond have recently become necessary. The classic linear relationship between shear modulus (G) and Vickers hardness (HV), along with more recent non-linear formulations based on Pugh's modulus extending into the superhard region (HV > 40 GPa) have guided synthesis and identification of novel superabrasives. These schemes rely on accurately quantifying HV of diamond-like materials approaching or potentially exceeding the hardness of the diamond indenter, leading to debate about methodology and the very definition of hardness. Elasticity measurements on such materials are equally challenging. Here we used a high-precision, GHz-ultrasonic interferometer in conjunction with a newly developed optical contact micrometer and 3D optical microscopy of indentations to evaluate elasticity-hardness relations in the ultrahard range (HV > 80 GPa) by examining single-crystal boron-doped diamond (BDD) with boron contents ranging from 50-3000 ppm. We observe a drastic elastic-mechanical softening in highly doped BDD relative to the trends observed for superhard materials, providing insight into elasticity-hardness relations for ultrahard materials.

  6. In/extrinsic granularity in superconducting boron-doped diamond

    Energy Technology Data Exchange (ETDEWEB)

    Willems, B.L. [INPAC - Institute for Nanoscale Physics and Chemistry, Katholieke Universiteit Leuven, Celestijnenlaan 200D, B - 3001 Leuven (Belgium); Facultad de Ciencias Fisicas, Universidad Nacional Mayor de San Marcos, P.O. 14-0149, Lima-14 (Peru); Zhang, G. [INPAC - Institute for Nanoscale Physics and Chemistry, Katholieke Universiteit Leuven, Celestijnenlaan 200D, B - 3001 Leuven (Belgium); Vanacken, J., E-mail: johan.vanacken@fys.kuleuven.b [INPAC - Institute for Nanoscale Physics and Chemistry, Katholieke Universiteit Leuven, Celestijnenlaan 200D, B - 3001 Leuven (Belgium); Moshchalkov, V.V. [INPAC - Institute for Nanoscale Physics and Chemistry, Katholieke Universiteit Leuven, Celestijnenlaan 200D, B - 3001 Leuven (Belgium); Guillamon, I.; Suderow, H.; Vieira, S. [Laboratorio de Bajas Temperaturas, Departamento de Fisica de la Materia Condensada, Universidad Autonoma de Madrid (Spain); Janssens, S.D. [Hasselt University, Institute for Materials Research, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); Haenen, K.; Wagner, P. [Hasselt University, Institute for Materials Research, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); Division IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek (Belgium)

    2010-10-01

    When charge carriers are introduced in diamond, e.g. by chemical doping with Boron (B), the C{sub 1-x}B{sub x} diamond:B can exhibit an insulator-to-metal transition (p{sub Mott{approx}}2x10{sup 20}cm{sup -3}). Under even heavier boron doping (n{sub B{approx}}10{sup 21}cm{sup -3}), diamond becomes superconducting. Using microwave plasma-assisted chemical vapor deposition (MPCVD) we have prepared diamond:B thin films with critical offset temperatures T{sub C} below 3 K. We have investigated the transport properties of these diamond:B thin films, which show pronounced granular effects. It turns out, that this granularity is both intrinsic as well as extrinsic. The extrinsic granularity is the effect of the growth method which needs to start from a seeding of the substrate with detonation nanodiamond, which acts as nucleation centers for further MPCVD growth of the film. In using SPM/STM techniques, we also observed intrinsic granularity, meaning that within physical grains, we observe also a strong intragrain modulation of the order parameter. As a consequence of these granularities, the transport properties show evidence of (i) strong superconducting fluctuations and (ii) Cooper pair tunneling and/or quasiparticle tunneling. The latter effects explain the observed negative magnetoresistance.

  7. Study of helium embrittlement in boron doped EUROFER97 steels

    Science.gov (United States)

    Gaganidze, E.; Petersen, C.; Aktaa, J.

    2009-04-01

    To simulate helium effects in Reduced Activation Ferritic/Martensitic steels, experimental heats ADS2, ADS3 and ADS4 with the basic composition of EUROFER97 (9%Cr-WVTa) were doped with different contents of natural boron and separated 10B-isotope (0.008-0.112 wt.%) and irradiated in High Flux Reactor (HFR) Petten up to 16.3 dpa at 250-450 °C and in Bor-60 fast reactor in Dimitrovgrad up to 31.8 dpa at 332-338 °C. The embrittlement and hardening are investigated by instrumented Charpy-V tests with subsize specimens. Complete burn-up of 10B isotope under neutron irradiation in HFR Petten led to generation of 84, 432 and 5580 appm He and partial boron-to-helium transformation in Bor-60 led to generation of 9, 46, 880 appm He in ADS2, ADS3 and ADS4 heats, respectively. At low irradiation temperatures Tirr ⩽ 340 °C the boron doped steels show progressive embrittlement with increasing helium amount. Irradiation induced DBTT shift of EUROFER97 based heat doped with 1120 wppm separated 10B isotope could not be quantified due to large embrittlement found in the investigated temperature range. At Tirr ⩽ 340 °C helium induced extra embrittlement is attributed to material hardening induced by helium bubbles and described in terms of phenomenological model.

  8. Polyoxometalate-Modified Boron-Doped Diamond Electrodes

    Science.gov (United States)

    Kondo, Takeshi; Taniguchi, Yuichi; Yuasa, Makoto; Kawai, Takeshi

    2012-09-01

    Polyoxometalates were immobilized on a boron-doped diamond (BDD) surface modified by a photochemical modification method. The BDD surface was first modified with allyltriethylammonium bromide (ATAB) to form surface quaternary ammonium groups. The ATAB-BDD was then immersed in a phosphomolybdic acid (H3PMo12O40, denoted as PMo12) solution to fabricate PMo12-adsorbed ATAB-BDD (PMo12-ATAB-BDD). The electrostatic interaction between PMo12 and the quaternary ammonium group on ATAB-BDD is considered to be critical to the stable immobilization. Polyoxometalate-modified BDD was also fabricated from phosphonic-acid-terminated BDD. BDD was first modified with vinylphosphonic acid (VPA), followed by the reaction of the surface phosphonic acid groups with ammonium molybdate to generate a lacunary phosphomolybdic acid (PMox) group. Although the coverage of the PMox group on PMox-BDD was less than that of PMo12-ATAB-BDD, PMox-BDD was found to be more stable to potential cycling than PMo12-ATAB-BDD, indicating that covalent modification methods are effective for creating stable functional groups on diamond.

  9. Flexible Boron-Doped Diamond (BDD) Electrodes for Plant Monitoring.

    Science.gov (United States)

    Tago, Shoko; Ochiai, Tsuyoshi; Suzuki, Seitaro; Hayashi, Mio; Kondo, Takeshi; Fujishima, Akira

    2017-07-15

    Detecting the bio-potential changes of plants would be useful for monitoring their growth and health in the field. A sensitive plant monitoring system with flexible boron-doped diamond (BDD) electrodes prepared from BDD powder and resin (Nafion or Vylon-KE1830) was investigated. The properties of the electrodes were compared with those of small BDD plate-type electrodes by monitoring the bioelectric potentials of potted Aloe and hybrid species in the genus Opuntia. While flexible BDD electrodes have wide potential windows, their cyclic voltammograms are different from those of the BDD plate. Further, the potential gap between a pair of electrodes attached to the plants changes as the plants are stimulated artificially with a finger touch, suggesting that the bioelectric potentials in the plant also changed, manifesting as changes in the potential gap between the electrodes. The BDD electrodes were assessed for their response reproducibility to a finger stimulus for 30 days. It was concluded that the plant monitoring system worked well with flexible BDD electrodes. Further, the electrodes were stable, and as reliable as the BDD plate electrodes in this study. Thus, a flexible and inexpensive BDD electrode system was successfully fabricated for monitoring the bioelectric potential changes in plants.

  10. The water decomposition reactions on boron-doped diamond electrodes

    Directory of Open Access Journals (Sweden)

    Suffredini Hugo B

    2004-01-01

    Full Text Available The electrochemical processes occurring at both edges of the wide electrochemical window of the boron doped diamond (BDD electrode were studied by polarization curves experiments to evaluate the apparent energy of activation for the rate determining step in each reaction. It was found that the hydrogen evolution reaction occurs by a Volmer-Heyrovsky mechanism with the first step being the RDS. Moreover, the apparent energy of activation calculated from the Tafel plots presented a value as high as 150 kJ mol-1, indicating the formation of the M-H intermediate that is characteristic for the Volmer step. On the other hand, the apparent energy of activation for the oxygen evolution reaction was found to be 106 kJ mol-1 suggesting that the RDS in this mechanism is the initial adsorption step. In this way, it was demonstrated that the interaction between water molecules and the electrode surface is strongly inhibited on BDD thus justifying the extended potential window observed for this material.

  11. Elastic and mechanical softening in boron-doped diamond

    Science.gov (United States)

    Liu, Xiaobing; Chang, Yun-Yuan; Tkachev, Sergey N.; Bina, Craig R.; Jacobsen, Steven D.

    2017-02-01

    Alternative approaches to evaluating the hardness and elastic properties of materials exhibiting physical properties comparable to pure diamond have recently become necessary. The classic linear relationship between shear modulus (G) and Vickers hardness (HV), along with more recent non-linear formulations based on Pugh’s modulus extending into the superhard region (HV > 40 GPa) have guided synthesis and identification of novel superabrasives. These schemes rely on accurately quantifying HV of diamond-like materials approaching or potentially exceeding the hardness of the diamond indenter, leading to debate about methodology and the very definition of hardness. Elasticity measurements on such materials are equally challenging. Here we used a high-precision, GHz-ultrasonic interferometer in conjunction with a newly developed optical contact micrometer and 3D optical microscopy of indentations to evaluate elasticity-hardness relations in the ultrahard range (HV > 80 GPa) by examining single-crystal boron-doped diamond (BDD) with boron contents ranging from 50–3000 ppm. We observe a drastic elastic-mechanical softening in highly doped BDD relative to the trends observed for superhard materials, providing insight into elasticity-hardness relations for ultrahard materials.

  12. Nanoparticles prepared from porous silicon nanowires for bio-imaging and sonodynamic therapy.

    Science.gov (United States)

    Osminkina, Liubov A; Sivakov, Vladimir A; Mysov, Grigory A; Georgobiani, Veronika A; Natashina, Ulyana А; Talkenberg, Florian; Solovyev, Valery V; Kudryavtsev, Andrew A; Timoshenko, Victor Yu

    2014-01-01

    Evaluation of cytotoxicity, photoluminescence, bio-imaging, and sonosensitizing properties of silicon nanoparticles (SiNPs) prepared by ultrasound grinding of porous silicon nanowires (SiNWs) have been investigated. SiNWs were formed by metal (silver)-assisted wet chemical etching of heavily boron-doped (100)-oriented single crystalline silicon wafers. The prepared SiNWs and aqueous suspensions of SiNPs exhibit efficient room temperature photoluminescence (PL) in the spectral region of 600 to 1,000 nm that is explained by the radiative recombination of excitons confined in small silicon nanocrystals, from which SiNWs and SiNPs consist of. On the one hand, in vitro studies have demonstrated low cytotoxicity of SiNPs and possibilities of their bio-imaging applications. On the other hand, it has been found that SiNPs can act as efficient sensitizers of ultrasound-induced suppression of the viability of Hep-2 cancer cells.

  13. Cytotoxicity of Boron-Doped Nanocrystalline Diamond Films Prepared by Microwave Plasma Chemical Vapor Deposition

    Science.gov (United States)

    Liu, Dan; Gou, Li; Ran, Junguo; Zhu, Hong; Zhang, Xiang

    2015-07-01

    Boron-doped nanocrystalline diamond (NCD) exhibits extraordinary mechanical properties and chemical stability, making it highly suitable for biomedical applications. For implant materials, the impact of boron-doped NCD films on the character of cell growth (i.e., adhesion, proliferation) is very important. Boron-doped NCD films with resistivity of 10-2 Ω·cm were grown on Si substrates by the microwave plasma chemical vapor deposition (MPCVD) process with H2 bubbled B2O3. The crystal structure, diamond character, surface morphology, and surface roughness of the boron-doped NCD films were analyzed using different characterization methods, such as X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and atomic force microscopy (AFM). The contact potential difference and possible boron distribution within the film were studied with a scanning kelvin force microscope (SKFM). The cytotoxicity of films was studied by in vitro tests, including fluorescence microscopy, SEM and MTT assay. Results indicated that the surface roughness value of NCD films was 56.6 nm and boron was probably accumulated at the boundaries between diamond agglomerates. MG-63 cells adhered well and exhibited a significant growth on the surface of films, suggesting that the boron-doped NCD films were non-toxic to cells. supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices (University of Electronic Science and Technology of China) (No. KFJJ201313)

  14. Boron-doped cobalt oxide thin films and its electrochemical properties

    Science.gov (United States)

    Kerli, S.

    2016-09-01

    The cobalt oxide and boron-doped cobalt oxide thin films were produced by spray deposition method. All films were obtained onto glass and fluorine-doped tin oxide (FTO) substrates at 400∘C and annealed at 550∘C. We present detailed analysis of the morphological and optical properties of films. XRD results show that boron doping disrupts the structure of the films. Morphologies of the films were investigated by using a scanning electron microscopy (SEM). Optical measurements indicate that the band gap energies of the films change with boron concentrations. The electrochemical supercapacitor performance test has been studied in aqueous 6 M KOH electrolyte and with scan rate of 5 mV/s. Measurements show that the largest capacitance is obtained for 3% boron-doped cobalt oxide film.

  15. The mechanism and process of spontaneous boron doping in graphene in the theoretical perspective

    Energy Technology Data Exchange (ETDEWEB)

    Deng, Xiaohui, E-mail: x.deng@hynu.edu.cn [Department of Physics and Electronic Information Science, Hengyang Normal University, Hengyang 421008 (China); Zeng, Jing [Department of Physics and Electronic Information Science, Hengyang Normal University, Hengyang 421008 (China); Si, Mingsu [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Lu, Wei [University Research Facility in Materials Characterization and Device Fabrication, The Hong Kong Polytechnic University (China)

    2016-10-07

    A theoretical model is presented that reveals the mechanism of spontaneous boron doping of graphene and is consistent with the microwave plasma experiment choosing trimethylboron as the doping source (Tang et al. (2012) [19]). The spontaneous boron doping originates from the synergistic effect of B and other groups (C, H, CH, CH{sub 2} or CH{sub 3}) decomposing from trimethylboron. This work successfully explains the above experimental phenomenon and proposes a novel and feasible method aiming at B doping of graphene. The mechanism presented here may be also suitable for other two-dimensional carbon-based materials. - Highlights: • Spontaneous boron doping; • Microwave plasma experiment; • First-principles calculations.

  16. The influence of boron doping level on quality and stability of diamond film on Ti substrate

    Energy Technology Data Exchange (ETDEWEB)

    Wei, J.J., E-mail: weijun81@yahoo.com.cn [Department of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Li, Ch.M., E-mail: chengmli@mater.ustb.edu.cn [Department of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Gao, X.H.; Hei, L.F.; Lvun, F.X. [Department of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China)

    2012-07-01

    In this study, we investigate the influence of boron doping level on film quality and stability of boron doped diamond (BDD) film deposited on titanium substrate (Ti/BDD) using microwave plasma chemical vapor deposition system. The results demonstrate that high boron concentration will improve the film conductivity, whereas the diamond film quality and adhesion are deteriorated obviously. The increase of total internal stress in the film and the variation of components within the interlayer will weaken the coating adhesion. According to the analysis of electrode inactivation mechanism, high boron doping level will be harmful to the electrode stability in the view of diamond quality and adhesion deterioration. In this study, 5000 ppm B/C ratio in the reaction gas is optimized for Ti/BDD electrode preparation.

  17. Impurity concentrations and surface charge densities on the heavily doped face of a silicon solar cell

    Science.gov (United States)

    Weinberg, I.; Hsu, L. C.

    1977-01-01

    Increased solar cell efficiencies are attained by reduction of surface recombination and variation of impurity concentration profiles at the n(+) surface of silicon solar cells. Diagnostic techniques are employed to evaluate the effects of specific materials preparation methodologies on surface and near surface concentrations. It is demonstrated that the MOS C-V method, when combined with a bulk measurement technique, yields more complete concentration data than are obtainable by either method alone. Specifically, new solar cell MOS C-V measurements are combined with bulk concentrations obtained by a successive layer removal technique utilizing measurements of sheet resistivity and Hall coefficient.

  18. Statistical comparisons of data on band-gap narrowing in heavily doped silicon - Electrical and optical measurements

    Science.gov (United States)

    Bennett, H. S.; Wilson, C. L.

    1984-05-01

    A system of subroutines for iteratively reweighted least squares (IRLS) computations has been applied to the published measured and theoretical data on band-gap narrowing in heavily doped silicon. The data include electrical and optical measurements at room temperature, photoluminescence and optical measurements for temperatures below 35 K, and theoretical calculations at 300 and 0 K. The IRLS procedure allows a clear graphical comparison of the various experimental and theoretical data in band-gap narrowing to be made. The results are (1) band-gap changes determined by the optical absorption are consistent at both 300 K and at temperatures below 35 K with recent theoretical calculations, (2) the electrical and optical measurements are not consistent with each other, and (3) the low temperature optical absorption data and the photoluminescence data are not consistent with each other.

  19. A theory of density-of-states effective masses in heavily doped silicon at high temperatures and its applications

    Science.gov (United States)

    Van Cong, H.

    2007-01-01

    A theory of density-of-states effective masses in the n(p)-type heavily doped silicon at high temperatures, T, was developed, taking into account the effects of nonparabolicity in the band and Fermi-Dirac statistics. It was applied to determine the intrinsic carrier density at 200⩽ T (K)⩽500 accurate to within 4.8%, and at 300 K semi-empirical forms for band gap narrowing (BGN) and apparent BGN with an accuracy of 17% and for optical gap with a precision of 1%, giving rise to a satisfactory description of both electrical and optical data. Furthermore, at 280⩽ T (K)⩽400, the BGN can be assumed to be T-independent, with a precision of 8.8%.

  20. Test beam results of heavily irradiated magnetic Czochralski silicon (MCz-Si) strip detectors

    CERN Document Server

    Luukka, P; Korjenevski, S; Maenpaa, T; Viljanen, H; Demina, R; Gotra, Y; Lemaitre, V; Moilanen, H; Militaru, O; Bhattacharya, S; Neuland, M; Maksimow, M; Harkonen, J; Kortelainen, M J; Spiegel, L; Hartmann, F; Dierlamm, A; Tuovinen, E; Lampen, T; Simonis, H J; Betchart, B; Czellar, S; Tuominiemi, J; Keutgen, T; Frey, M; Karimaki, V

    2010-01-01

    Strip detectors with an area of 16 cm(2) were processed on high resistivity n-type magnetic Czochralski silicon. In addition, detectors were processed on high resistivity Float Zone wafers with the same mask set for comparison. The detectors were irradiated to several different fluences up to the fluence of 3 x 10(15) 1 MeV n(eq)/cm(2) with protons or with mixed protons and neutrons. The detectors were fully characterized with CV- and IV-measurements prior to and after the irradiation. The beam test was carried out at the CERN H2 beam line using a silicon beam telescope that determines the tracks of the incoming particles and hence provides a reference measurement for the detector characterization. The n-type MCz-Si strip detectors have an acceptable SIN at least up to the fluence of 1 x 10(15) n(eq)/cm(2) and thus, they are a feasible option for the strip detector layers in the SLHC tracking systems. (C) 2009 Elsevier B.V. All rights reserved.

  1. Ultramicroelectrode array behavior of electrochemically partially blocked boron-doped diamond surface

    OpenAIRE

    Giancarlo R. Salazar-Banda; Eguiluz,Katlin I. B.; Carvalho, Adriana E.; Avaca,Luis A.

    2013-01-01

    It is demonstrated, for the first time using simple cyclic voltammetry experiments, that the anodic pre-polarization of boron-doped diamond electrodes (BDD) leads to partially blocked surfaces. Anodically pre-polarized BDD electrodes, with different boron-doping levels, presented sigmoidal cyclic voltammetry profiles to the ferro/ferri-cyanide redox couple under low scan rate (0.5 mV s-1). On the other hand, when the same electrodes are cathodically pre-polarized, quasi-reversible and reversi...

  2. Ionized dopant concentrations at the heavily doped surface of a silicon solar cell

    Science.gov (United States)

    Weinberg, I.; Broder, J. D.; Mazaris, G. A., Jr.; Hsu, L.

    1978-01-01

    Data are combined with concentrations obtained by a bulk measurement method using successive layer removal with measurements of Hall effect and resistivity. From the MOS (metal-oxide-semiconductor) measurements it is found that the ionized dopant concentration N has the value (1.4 + or - 0.1) x 10 to the 20th power/cu cm at distances between 100 and 220 nm from the n(+) surface. The bulk measurement technique yields average values of N over layers whose thickness is 2000 nm. Results show that, at the higher concentrations encountered at the n(+) surface, the MOS C-V technique, when combined with a bulk measurement method, can be used to evaluate the effects of materials preparation methodologies on the surface and near surface concentrations of silicon cells.

  3. Room-temperature near-infrared electroluminescence from boron-diffused silicon pn junction diodes

    Directory of Open Access Journals (Sweden)

    Si eLi

    2015-02-01

    Full Text Available Silicon pn junction diodes with different doping concentrations were prepared by boron diffusion into Czochralski (CZ n-type silicon substrate. Their room-temperature near-infrared electroluminescence (EL was measured. In the EL spectra of the heavily boron doped diode, a luminescence peak at ~1.6 m (0.78 eV was observed besides the band-to-band line (~1.1eV under the condition of high current injection, while in that of the lightly boron doped diode only the band-to-band line was observed. The intensity of peak at 0.78 eV increases exponentially with current injection with no observable saturation at room temperature. Furthermore, no dislocations were found in the cross-sectional transmission electron microscopy image, and no dislocation-related luminescence was observed in the low-temperature photoluminescence spectra. We deduce the 0.78 eV emission originates from the irradiative recombination in the strain region of diodes caused by the diffusion of large number of boron atoms into silicon crystal lattice.

  4. An enhanced device simulation of heavily irradiated silicon detectors at cryogenic temperatures

    CERN Document Server

    Moscatelli, F; MacEvoy, B; Hall, G; Passeri, D; Merlani, R; Pignatel, Giogrio Umberto

    2004-01-01

    Radiation hardness is a critical design concern for present and future silicon detectors in high energy physics. Tracking systems at the CERN Large Hadron Collider (LHC) are expected to operate for ten years and to receive fast hadron fluences equivalent to 10/sup 15/ cm /sup -2/ 1MeV neutrons. Recently, low temperature operating conditions have been suggested as an effective means to mitigate the damaging effects of radiation on detector charge collection properties. In order to investigate this effect, simulations have been carried out using the ISE-TCAD DESSIS device simulator. The so- called "three-level" model has been used. A comprehensive analysis of the influence of the V/sub 2/, C/sub i/O/sub i/ and V/sub 2/O defect capture cross-sections on the effective doping concentration (N/sub eff/) as a function of temperature and fluence has been carried out. The capture cross sections have been varied in the range 10/sup -18 /-10/sup -12/ cm/sup 2/. The simulated results are compared with charge collection s...

  5. Comprehensive device Simulation modeling of heavily irradiated silicon detectors at cryogenic temperatures

    CERN Document Server

    Moscatelli, F; MacEvoy, B; Hall, G; Passeri, D; Petasecca, M; Pignatel, Giogrio Umberto

    2004-01-01

    Radiation hardness is a critical design concern for present and future silicon detectors in high energy physics. Tracking systems at the CERN Large Hadron Collider (LHC) are expected to operate for ten years and to receive fast hadron fluences equivalent to 10/sup 15/cm /sup -2/ 1-MeV neutrons. Recently, low temperature operating conditions have been suggested as a means of suppressing the negative effects of radiation damage on detector charge collection properties. To investigate this effect, simulations have been carried out using the ISE-TCAD DESSIS device simulator. The so-called "three-level model" has been used. A comprehensive analysis of the influence of the V/sub 2/, C/sub i/O/sub i/ and V/sub 2/O capture cross sections on the effective doping concentration (N/sub eff/) as a function of temperature and fluence has been carried out. The capture cross sections have been varied in the range 10/sup -18/-10/sup -12/ cm/sup 2/. The simulated results are compared with charge collection spectra obtained wit...

  6. Boron-Doped Diamond Electrodes for the Electrochemical Oxidation and Cleavage of Peptides

    NARCIS (Netherlands)

    Roeser, Julien; Alting, Niels F. A.; Permentier, Hjalmar P.; Bruins, Andries P.; Bischoff, Rainer

    2013-01-01

    Electrochemical oxidation of peptides and proteins is traditionally performed on carbon-based electrodes. Adsorption caused by the affinity of hydrophobic and aromatic amino acids toward these surfaces leads to electrode fouling. We compared the performance of boron-doped diamond (BDD) and glassy ca

  7. Plasma-induced high efficient synthesis of boron doped reduced graphene oxide for supercapacitors

    DEFF Research Database (Denmark)

    Li, Shaobo; Wang, Zhaofeng; Jiang, Hanmei

    2016-01-01

    In this work, we presented a novel route to synthesize boron doped reduced graphene oxide (rGO) by using the dielectric barrier discharge (DBD) plasma technology under ambient conditions. The doping of boron (1.4 at%) led to a significant improvement in the capacitance of rGO and supercapacitors...

  8. Thermal shock resistance of thick boron-doped diamond under extreme heat loads

    NARCIS (Netherlands)

    De Temmerman, G.; Dodson, J.; Linke, J.; Lisgo, S.; Pintsuk, G.; Porro, S.; Scarsbrook, G.

    2011-01-01

    Thick free-standing boron-doped diamonds were prepared by microwave plasma assisted chemical vapour deposition. Samples with a final thickness close to 5 mm and with lateral dimensions 25 x 25 mm were produced. The thermal shock resistance of the material was tested by exposure in the JUDITH electro

  9. Deposition of boron doped diamond and carbon nanomaterials on graphite foam electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Marton, Marian, E-mail: marian.marton@stuba.sk; Vojs, Marian; Kotlár, Mário; Michniak, Pavol; Vančo, Ľubomír; Veselý, Marian; Redhammer, Robert

    2014-09-01

    Highlights: • The possibility of boron doped diamond deposition on porous carbon foam by HFCVD method was demonstrated. • Various carbon forms were synthesized including BDD, thin films of graphite nanosheets, carbon nanowalls, graphite nanotips and its composites. • Carbon nanowalls were overgrown by BDD nanocrystals, thus creating a new type of carbon nanomaterial not published yet, a CNW/BDD composite with a unique Raman spectrum. - Abstract: Boron doped diamond (BDD) has remarkable physical and chemical properties, that makes it an attractive material for electrochemical applications. In this study, deposition process of BDD on porous carbon foam electrodes was performed by HFCVD method. After depositions, the substrates were not homogenously covered by the BDD thin film only. Depending on the deposition temperature, foam porosity and distance from heated filaments, different carbon nanomaterials were synthesized. The boron doped diamond, graphite nanosheets, carbon nanowalls and its composites occurred on the foams outer and inner surfaces. Two new observed types of carbon structures, the carbon nanowalls – boron doped diamond composite and graphite nanotips are analyzed and described. Analyses were made by SEM and Raman spectroscopy. The influence of deposition conditions on the growth process is discussed.

  10. Boron-Doped Diamond Electrodes for the Electrochemical Oxidation and Cleavage of Peptides

    NARCIS (Netherlands)

    Roeser, Julien; Alting, Niels F. A.; Permentier, Hjalmar P.; Bruins, Andries P.; Bischoff, Rainer

    2013-01-01

    Electrochemical oxidation of peptides and proteins is traditionally performed on carbon-based electrodes. Adsorption caused by the affinity of hydrophobic and aromatic amino acids toward these surfaces leads to electrode fouling. We compared the performance of boron-doped diamond (BDD) and glassy

  11. Voltammetric determination of wedelolactone, an anti-HIV herbal drug, at boron-doped diamond electrode

    Indian Academy of Sciences (India)

    Sachin Saxena; Ratnanjali Shrivastava; Soami P Satsangee

    2015-05-01

    Boron-doped diamond electrode has been utilized for the study of electrochemical behaviour of an anti-HIV herbal drug wedelolactone in Britton-Robinson buffer (pH-2.5) by square-wave and cyclic voltammetry techniques. The response characteristics of cyclic voltammetry and square wave voltammetry showed a remarkable increase in the anodic peak current and electrochemical impedance spectroscopy revealed a lowering in charge transfer resistance at the boron-doped diamond electrode as compared to the glassy carbon electrode that can be attributed to the higher sensitivity of boron-doped diamond sensor. Cyclic voltammetry at the boron-doped diamond surface revealed the oxidation of wedelolactone with two oxidation peaks (P1 and P2) with Ep1 = 0.4V and Ep2 =1.00 V with scan rate varying from 10 - 220 mV/s and exhibits diffusion-controlled process. Based on the electrochemical measurements, a probable oxidation mechanism has been deduced and the electrode dynamics parameters have been evaluated. The effect of concentration on the peak currents of wedelolactone was found to have a linear relationship within the concentration range of 50–700 ng/mL. The LOD and LOQ were found to be 43.87 and 132.93 ng/mL respectively. The applicability of the proposed method was further scrutinized by the successful determination of wedelolactone in real plant samples.

  12. Ultramicroelectrode array behavior of electrochemically partially blocked boron-doped diamond surface

    National Research Council Canada - National Science Library

    Salazar-Banda, Giancarlo R; Eguiluz, Katlin I. B; Carvalho, Adriana E. de; Avaca, Luis A

    2013-01-01

    ...) leads to partially blocked surfaces. Anodically pre-polarized BDD electrodes, with different boron-doping levels, presented sigmoidal cyclic voltammetry profiles to the ferro/ferri-cyanide redox couple under low scan rate (0.5 mV s-1...

  13. Boron doping compensation of hydrogenated amorphous and polymorphous germanium thin films for infrared detection applications

    Energy Technology Data Exchange (ETDEWEB)

    Moreno, M., E-mail: mmoreno@inaoep.mx [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Delgadillo, N. [Universidad Autónoma de Tlaxcala, Av. Universidad No. 1, Z. P. 90006 Tlaxcala (Mexico); Torres, A. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Ambrosio, R. [Technology and Engineering Institute, Ciudad Juarez University UACJ, Av. Del Charro 450N, Z. P. 32310 Chihuahua (Mexico); Rosales, P.; Kosarev, A.; Reyes-Betanzo, C.; Hidalga-Wade, J. de la; Zuniga, C.; Calleja, W. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico)

    2013-12-02

    In this work we have studied boron doping of hydrogenated amorphous germanium a-Ge:H and polymorphous germanium (pm-Ge:H) in low regimes, in order to compensate the material from n-type (due to oxygen contamination that commonly occurs during plasma deposition) to intrinsic, and in this manner improve the properties that are important for infrared (IR) detection, as activation energy (E{sub a}) and temperature coefficient of resistance (TCR). Electrical, structural and optical characterization was performed on the films produced. Measurements of the temperature dependence of conductivity, room temperature conductivity (σ{sub RT}), E{sub a} and current–voltage characteristics under IR radiation were performed in the compensated a-Ge:H and pm-Ge:H films. Our results demonstrate that, effectively, the values of E{sub a}, TCR and IR detection are improved on the a-Ge:H/pm-Ge:H films, using boron doping in low regimes, which results of interest for infrared detectors. - Highlights: • We reported boron doping compensation of amorphous and polymorphous germanium. • The films were deposited by plasma enhanced chemical vapor deposition. • The aim is to use the films as thermo-sensing elements in un-cooled microbolometers. • Those films have advantages over boron doped a-Si:H used in commercial detectors.

  14. Synthesis of Boron-doped Diamond/Porous Ti Composite Materials——Effect of Carbon Concentration

    Institute of Scientific and Technical Information of China (English)

    MA Ming; CHANG Ming; LI Xiaowei

    2012-01-01

    Highly boron-doped diamond films were deposited on porous titanium substrates by hot filament chemical vapor deposition technique.The morphology variation of highly boron-doped diamond films grown on porous titanium substrates was investigated,and the effects of carbon concentration on nucleation density and diamond growth were also studied.The continuous change of surface morphology and structure of diamond film were characterized by scanning electron microscopy.The structures of diamond film and interlayer were analyzed by X-ray diffraction.The quality of boron-doped diamond film was confirmed by visible Raman spectroscopy.The experimental results reveal that surface morphology and quality of boron-doped diamond films are various due to the change of carbon concentration.The thickness of intermediate layer decreases with the carbon concentration increasing.

  15. Electroanalysis of tetracycline using nickel-implanted boron-doped diamond thin film electrode applied to flow injection system.

    Science.gov (United States)

    Treetepvijit, Surudee; Chuanuwatanakul, Suchada; Einaga, Yasuaki; Sato, Rika; Chailapakult, Orawon

    2005-05-01

    The electrochemical analysis of tetracycline was investigated using nickel-implanted boron-doped diamond thin film electrode by cyclic voltammetry and amperometry with a flow injection system. Cyclic voltammetry was used to study the electrochemical oxidation of tetracycline. Comparison experiments were carried out using as-deposited boron-doped diamond thin film electrode (BDD). Nickel-implanted boron-doped diamond thin film electrode (Ni-DIA) provided well-resolved oxidation irreversible cyclic voltammograms. The current signals were higher than those obtained using the as-deposited BDD electrode. Results using nickel-implanted boron-doped diamond thin film electrode in flow injection system coupled with amperometric detection are presented. The optimum potential for tetracycline was 1.55 V versus Ag/AgCl. The linear range of 1.0 to 100 microM and the detection limit of 10 nM were obtained. In addition, the application for drug formulation was also investigated.

  16. Formation of Boron-Carbon Nanosheets and Bilayers in Boron-Doped Diamond: Origin of Metallicity and Superconductivity

    National Research Council Canada - National Science Library

    Polyakov, S N; Denisov, V N; Mavrin, B N; Kirichenko, A N; Kuznetsov, M S; Martyushov, S Yu; Terentiev, S A; Blank, V D

    2016-01-01

    The insufficient data on a structure of the boron-doped diamond (BDD) has frustrated efforts to fully understand the fascinating electronic properties of this material and how they evolve with doping...

  17. Study of Electrochemical Degradation of Bromophenol Blue at Boron-doped Diamond Electrode by Using Factorial Design Analysis

    OpenAIRE

    Rong Fei; Ding Zhen; Zhang Chunyong; Deng Jianjun

    2015-01-01

    As an ideal anode material, Boron-doped diamond (BDD) has been widely applied in electro-chemical oxidation of various organic pollutants, for its unique physical and chemical properties. In this paper, the authors studied the degradation of bromophenol blue through the electrochemical anodic oxidation by using the boron-doped BDD as the anode. The effect of statistically important operating parameters on treatment per-formance, such as treatment time, flow rate, applied current and concentra...

  18. Critical boron-doping levels for generation of dislocations in synthetic diamond

    Energy Technology Data Exchange (ETDEWEB)

    Alegre, M. P., E-mail: maripaz.alegre@uca.es; Araújo, D.; Pinero, J. C.; Lloret, F.; Villar, M. P. [Departamento de Ciencias de los Materiales e Ingeniería Metalúrgica y Química, Universidad de Cádiz, 11510 Puerto Real, Cádiz (Spain); Fiori, A.; Achatz, P.; Chicot, G.; Bustarret, E. [Université Grenoble Alpes, Institut NEEL, 25 av. des Martyrs, 38042 Grenoble (France); Jomard, F. [GEMaC, CNRS and Université de Versailles St Quentin, 45 Avenue des États-Unis, 78035 Versailles (France)

    2014-10-27

    Defects induced by boron doping in diamond layers were studied by transmission electron microscopy. The existence of a critical boron doping level above which defects are generated is reported. This level is found to be dependent on the CH{sub 4}/H{sub 2} molar ratios and on growth directions. The critical boron concentration lied in the 6.5–17.0 × 10{sup 20}at/cm{sup 3} range in the 〈111〉 direction and at 3.2 × 10{sup 21 }at/cm{sup 3} for the 〈001〉 one. Strain related effects induced by the doping are shown not to be responsible. From the location of dislocations and their Burger vectors, a model is proposed, together with their generation mechanism.

  19. Cu and Boron Doped Carbon Nitride for Highly Selective Oxidation of Toluene to Benzaldehyde

    Directory of Open Access Journals (Sweden)

    Hongling Han

    2015-07-01

    Full Text Available A novel Cu and boron doped graphitic carbon nitride catalyst (Cu-CNB was synthesized using cheap precursors and systematically characterized. The selective oxidation of toluene proceeded very smoothly over the catalyst at 70 °C using tert-butyl hydroperoxide (TBHP as the oxidant to exclusively afford benzaldehyde. The catalyst can be used for at least five cycles without decrease in activity and selectivity.

  20. Electrochemical Incineration of Phenolic Compounds from the Hydrocarbon Industry Using Boron-Doped Diamond Electrodes

    OpenAIRE

    Alejandro Medel; Erika Bustos; Karen Esquivel; Godínez, Luis A.; Yunny Meas

    2012-01-01

    Electrochemical incineration using boron-doped diamond electrodes was applied to samples obtained from a refinery and compared to the photo-electro-Fenton process in order to selectively eliminate the phenol and phenolic compounds from a complex matrix. Due to the complex chemical composition of the sample, a pretreatment to the sample in order to isolate the phenolic compounds was applied. The effects of the pretreatment and of pH on the degradation of the phenolic compounds were evaluated. ...

  1. Graphitized boron-doped carbon foams: Performance as anodes in lithium-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez, Elena; Camean, Ignacio; Garcia, Roberto [Instituto Nacional del Carbon (CSIC), C/Francisco Pintado Fe 26, 33011 Oviedo (Spain); Garcia, Ana B., E-mail: anabgs@incar.csic.es [Instituto Nacional del Carbon (CSIC), C/Francisco Pintado Fe 26, 33011 Oviedo (Spain)

    2011-05-30

    Highlights: > Because of the catalytic effect of boron, graphite-like foams were prepared. > The presence of substitutional boron in carbon foams improves their anodic performance. > The graphitized boron-doped foams provide reversible capacities of 310 mA h g{sup -1}. - Abstract: The electrochemical performance as potential anodes in lithium-ion batteries of several boron-doped and non-doped graphitic foams with different degree of structural order was investigated by galvanostatic cycling. The boron-doped foams were prepared by the co-pyrolysis of a coal and two boron sources (boron oxide and a borane-pyridine complex), followed by heat treatment in the 2400-2800 deg. C temperature interval. The extent of the graphitization process of the carbon foams depends on boron concentration and source. Because of the catalytic effect of boron, lightweight graphite-like foams were prepared. Boron in the foams was found to be present as carbide (B{sub 4}C), in substitutional positions in the carbon lattice (B-C), bonded to nitrogen (B-N) and forming clusters. Larger reversible lithium storage capacities with values up to {approx}310 mA h g{sup -1} were achieved by using the boron oxide-based carbon foams. Moreover, since the electrochemical anodic performance of these boron-doped foams with different degree of structural order is similar, the beneficial effect of the presence of the B-C boron phase was inferred. However, the bonding of boron with nitrogen in the pyridine borane-based has a negative effect on lithium intercalation.

  2. Plasma-induced highly efficient synthesis of boron doped reduced graphene oxide for supercapacitors.

    Science.gov (United States)

    Li, Shaobo; Wang, Zhaofeng; Jiang, Hanmei; Zhang, Limei; Ren, Jingzheng; Zheng, Mingtao; Dong, Lichun; Sun, Luyi

    2016-09-21

    In this work, we presented a novel route to synthesize boron doped reduced graphene oxide (rGO) by using the dielectric barrier discharge (DBD) plasma technology under ambient conditions. The doping of boron (1.4 at%) led to a significant improvement in the capacitance of rGO and supercapacitors based on the as-synthesized B-rGO exhibited an outstanding specific capacitance.

  3. Cu and Boron Doped Carbon Nitride for Highly Selective Oxidation of Toluene to Benzaldehyde.

    Science.gov (United States)

    Han, Hongling; Ding, Guodong; Wu, Tianbin; Yang, Dexin; Jiang, Tao; Han, Buxing

    2015-07-13

    A novel Cu and boron doped graphitic carbon nitride catalyst (Cu-CNB) was synthesized using cheap precursors and systematically characterized. The selective oxidation of toluene proceeded very smoothly over the catalyst at 70 °C using tert-butyl hydroperoxide (TBHP) as the oxidant to exclusively afford benzaldehyde. The catalyst can be used for at least five cycles without decrease in activity and selectivity.

  4. Doping Silicon Wafers with Boron by Use of Silicon Paste

    Institute of Scientific and Technical Information of China (English)

    Yu Gao; Shu Zhou; Yunfan Zhang; Chen Dong; Xiaodong Pi; Deren Yang

    2013-01-01

    In this work we introduce recently developed silicon-paste-enabled p-type doping for silicon.Boron-doped silicon nanoparticles are synthesized by a plasma approach.They are then dispersed in solvents to form silicon paste.Silicon paste is screen-printed at the surface of silicon wafers.By annealing,boron atoms in silicon paste diffuse into silicon wafers.Chemical analysis is employed to obtain the concentrations of boron in silicon nanoparticles.The successful doping of silicon wafers with boron is evidenced by secondary ion mass spectroscopy (SIMS) and sheet resistance measurements.

  5. Synthesis and characterization of p-type boron-doped IIb diamond large single crystals

    Institute of Scientific and Technical Information of China (English)

    Li Shang-Sheng; Ma Hong-An; Li Xiao-Lei; Su Tai-Chao; Huang Guo-Feng; Li Yong; Jia Xiao-Peng

    2011-01-01

    High-quality p-type boron-doped II0b diamond large single crystals are successfully synthesized by the temperature gradient method in a china-type cubic anvil high-pressure apparatus at about 5.5 GPa and 1600 K. The morphologies and surface textures of the synthetic diamond crystals with different boron additive quantities are characterized by using an optical microscope and a scanning electron microscope respectively. The impurities of nitrogen and boron in diamonds are detected by micro Fourier transform infrared technique. The electrical properties including resistivities, Hall coefficients, Hall mobilities and carrier densities of the synthesized samples are measured by a four-point probe and the Hall effect method. The results show that large p-type boron-doped diamond single crystals with few nitrogen impurities have been synthesized. With the increase of quantity of additive boron, some high-index crystal faces such as {113} gradually disappear, and some stripes and triangle pits occur on the crystal surface. This work is helpful for the further research and application of boron-doped semiconductor diamond.

  6. Boron-doped MnO{sub 2}/carbon fiber composite electrode for supercapacitor

    Energy Technology Data Exchange (ETDEWEB)

    Chi, Hong Zhong, E-mail: hzchi@hdu.edu.cn [College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Zhu, Hongjie [College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Gao, Linhui [Center of Materials Engineering, Zhejiang Sci-Tech University, Hangzhou 310018 (China)

    2015-10-05

    Highlights: • Interstitial ion in MnO{sub 2} lattice. • Porous film composed by interlocking worm-like nanostructure. • Boron-doped birnessite-type MnO{sub 2}/carbon fiber composite electrode. • Enhanced capacitive properties through nonmetal element doping. - Abstract: The boron-doped MnO{sub 2}/carbon fiber composite electrode has been prepared via in situ redox reaction between potassium permanganate and carbon fibers in the presence of boric acid. The addition of boron as dopant results in the increase of growth-rate of MnO{sub 2} crystal and the formation of worm-like nanostructure. Based on the analysis of binding energy, element boron incorporates into the MnO{sub 2} lattice through interstitial mode. The doped electrode with porous framework is beneficial to pseudocapacitive reaction and surface charge storage, leading to higher specific capacitance and superior rate capability. After experienced 1000 cycles, the boron-doped MnO{sub 2} still retain a higher specific capacitance by about 80% of its initial value. The fall in capacitance is blamed to be the combination of the formation of soluble Mn{sup 2+} and the absence of active site on the outer surface.

  7. Boron doped ZnO embedded into reduced graphene oxide for electrochemical supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Alver, Ü., E-mail: ualver@ktu.edu.tr [Karadeniz Technical University, Dept. of Metallurgical and Materials Engineering, 61080 Trabzon (Turkey); Tanrıverdi, A. [Kahramanmaras Sutcu Imam University, Department of Physics, 46100 Kahramanmaraş (Turkey)

    2016-08-15

    Highlights: • Boron doped ZnO particles are fabricated and embedded into reduced graphene oxide (RGO) by hydrothermal method. • RGO/ZnO:B composites are used as electrodes for supercapacitors. • Presence of boron in RGO/ZnO composites caused increasing the stability and specific capacitance of electrodes. - Abstract: In this work, reduced graphene oxide/boron doped zinc oxide (RGO/ZnO:B) composites were fabricated by a hydrothermal process and their electrochemical properties were investigated as a function of dopant concentration. First, boron doped ZnO (ZnO:B) particles was fabricated with different boron concentrations (5, 10, 15 and 20 wt%) and then ZnO:B particles were embedded into RGO sheets. The physical properties of sensitized composites were characterized by XRD and SEM. Characterization indicated that the ZnO:B particles with plate-like structure in the composite were dispersed on graphene sheets. The electrochemical properties of the RGO/ZnO:B composite were investigated through cyclic voltammetry, galvanostatic charge/discharge measurements in a 6 M KOH electrolyte. Electrochemical measurements show that the specific capacitance values of RGO/ZnO:B electrodes increase with increasing boron concentration. RGO/ZnO:B composite electrodes (20 wt% B) display the specific capacitance as high as 230.50 F/g at 5 mV/s, which is almost five times higher than that of RGO/ZnO (52.71 F/g).

  8. Biophotonic low-coherence sensors with boron-doped diamond thin layer

    Science.gov (United States)

    Milewska, D.; Karpienko, K.; Sobaszek, M.; Jedrzejewska-Szczerska, M.

    2016-03-01

    Low-coherence sensors using Fabry-Perot interferometers are finding new applications in biophotonic sensing, especially due to the rapid technological advances in the development of new materials. In this paper we discuss the possibility of using boron-doped nanodiamond layers to protect mirror in a Fabry-Perot interferometer. A low-coherence sensor using Fabry-Perot interferometer with a boron-doped nanodiamond (B-NCD) thin protective layer has been developed. B-NCD layers with different boron doping level were investigated. The boron level, expressed as the boron to carbon (/[C]) ratio in the gas phase, was: 0, 2000, 5000 or 10000 ppm. B-NCD layers were grown by chemical vapor deposition (CVD). The sensing Fabry-Perot interferometer, working in the reflective mode, was connected to the source and to the optical processor by single-mode fibers. Superluminescent diodes with Gaussian spectral density were used as sources, while an optical spectrum analyzer was used as an optical processor. The design of the sensing interferometer was optimized to attain the maximum interference contrast. The experiment has shown that B-NCD thin layers can be successfully used in biophotonic sensors.

  9. Boron-doped MnTe semiconductor-sensitized ZnO solar cells

    Indian Academy of Sciences (India)

    Auttasit Tubtimtae; Suwanna Sheangliw; Kritsada Hongsith; Supab Choopun

    2014-10-01

    We studied the photovoltaic performance of boron-doped MnTe semiconductor-sensitized solar cells (B-doped MnTe SSCs). The B-doped MnTe semiconductor was grown on ZnO using two stages of the successive ionic layer adsorption and reaction (SILAR) technique. The two phases of B-doped semiconductor nanoparticles (NPs), i.e. MnTe and MnTe2 were observed with a diameter range of approximately 15–30 nm. The result of the energy conversion efficiency of the sample with boron doping was superior compared to that of an undoped sample, due to the substantial change in the short-circuit current density and the open-circuit voltage. In addition, plots of ( ℎ )2 vs ℎ with band gaps of 1.30 and 1.27 eV were determined for the undoped and B-doped MnTe NPs, respectively. It can be noted that the boron doping effects with the change in the band gap and lead to an improvement in the crystalline quality and also intimate contact between the larger sizes of MnTe NPs. Hence, a noticeably improved photovoltaic performance resulted. However, this kind of semiconductor sensitizer can be further extended by experiments on yielding a higher power conversion efficiency and greater stability of the device.

  10. Effect of boron doping in the carbon support on platinum nanoparticles and carbon corrosion

    Energy Technology Data Exchange (ETDEWEB)

    Acharya, Chethan K.; Li, Wei; Kwon, Gihan; Heath Turner, C.; Lane, Alan M.; Klein, Tonya [Department of Chemical and Biological Engineering, The University of Alabama, Tuscaloosa, AL 35487 (United States); Liu, Zhufang; Nikles, David [Department of Chemistry, The University of Alabama, Tuscaloosa, AL 35487 (United States); Weaver, Mark [Department of Metallurgical and Materials Engineering, The University of Alabama, Tuscaloosa, AL 35487 (United States)

    2009-07-15

    Carbon supported catalysts can lose their activity over a period of time due to the sintering of the nanometer-sized catalyst particles. The sintering of metal clusters on carbon supports can occur due to the weak interaction between the metal and the support and also due to the corrosion of carbon, especially in fuel cell electrocatalysts. The sintering may be reduced by increasing the interaction between the metal and the support and also by increasing the corrosion resistance of carbon supports. In an effort to mitigate the growth of the nanoparticles, carbon-substituted boron defects were introduced in the carbon lattice. The interaction between the Pt nanoparticles on the pure and boron-doped carbon supports was examined using X-ray photoelectron spectroscopy (XPS). The results indicate that the interaction between the Pt nanoparticles and the boron-doped carbon support was slightly stronger than the interaction between the Pt nanoparticles and the pure carbon support. Also, by using accelerated aging tests, the boron-doped system was found to be more resistant to carbon corrosion when compared to the pristine carbon-supported Pt catalyst. (author)

  11. Conductivity and superconductivity in heavily vacant diamond

    Directory of Open Access Journals (Sweden)

    S A Jafari

    2009-08-01

    Full Text Available   Motivated by the idea of impurity band superconductivity in heavily Boron doped diamond, we investigate the doping of various elements into diamond to address the question, which impurity band can offer a better DOS at the Fermi level. Surprisingly, we find that the vacancy does the best job in producing the largest DOS at the Fermi surface. To investigate the effect of disorder in Anderson localization of the resulting impurity band, we use a simple tight-binding model. Our preliminary study based on the kernel polynomial method shows that the impurity band is already localized at the concentration of 10-3. Around the vacancy concentration of 0.006 the whole spectrum of diamond becomes localized and quantum percolation takes place. Therefore to achieve conducting bands at concentrations on the scale of 5-10 percent, one needs to introduce correlations such as hopping among the vacancies .

  12. Synthesis, Characterization, and Evaluation of Boron-Doped Iron Oxides for the Photocatalytic Degradation of Atrazine under Visible Light

    Directory of Open Access Journals (Sweden)

    Shan Hu

    2012-01-01

    Full Text Available Photocatalytic degradation of atrazine by boron-doped iron oxides under visible light irradiation was investigated. In this work, boron-doped goethite and hematite were successfully prepared by sol-gel method with trimethylborate as boron precursor. The powders were characterized by XRD, UV-vis diffuse reflectance spectra, and porosimetry analysis. The results showed that boron doping could influence the crystal structure, enlarge the BET surface area, improve light absorption ability, and narrow their band-gap energy. The photocatalytic activity of B-doped iron oxides was evaluated in the degradation of atrazine under the visible light irradiation, and B-doped iron oxides showed higher atrazine degradation rate than that of pristine iron oxides. Particularly, B-doped goethite exhibited better photocatalytic activity than B-doped hematite.

  13. Doping Level of Boron-Doped Diamond Electrodes Controls the Grafting Density of Functional Groups for DNA Assays.

    Science.gov (United States)

    Švorc, Ĺubomír; Jambrec, Daliborka; Vojs, Marian; Barwe, Stefan; Clausmeyer, Jan; Michniak, Pavol; Marton, Marián; Schuhmann, Wolfgang

    2015-09-02

    The impact of different doping levels of boron-doped diamond on the surface functionalization was investigated by means of electrochemical reduction of aryldiazonium salts. The grafting efficiency of 4-nitrophenyl groups increased with the boron levels (B/C ratio from 0 to 20,000 ppm). Controlled grafting of nitrophenyldiazonium was used to adjust the amount of immobilized single-stranded DNA strands at the surface and further on the hybridization yield in dependence on the boron doping level. The grafted nitro functions were electrochemically reduced to the amine moieties. Subsequent functionalization with a succinic acid introduced carboxyl groups for subsequent binding of an amino-terminated DNA probe. DNA hybridization significantly depends on the probe density which is in turn dependent on the boron doping level. The proposed approach opens new insights for the design and control of doped diamond surface functionalization for the construction of DNA hybridization assays.

  14. Method for forming silicon on a glass substrate

    Science.gov (United States)

    McCarthy, A.M.

    1995-03-07

    A method by which single-crystal silicon microelectronics may be fabricated on glass substrates at unconventionally low temperatures. This is achieved by fabricating a thin film of silicon on glass and subsequently forming the doped components by a short wavelength (excimer) laser doping procedure and conventional patterning techniques. This method may include introducing a heavily boron doped etch stop layer on a silicon wafer using an excimer laser, which permits good control of the etch stop layer removal process. This method additionally includes dramatically reducing the remaining surface roughness of the silicon thin films after etching in the fabrication of silicon on insulator wafers by scanning an excimer laser across the surface of the silicon thin film causing surface melting, whereby the surface tension of the melt causes smoothing of the surface during recrystallization. Applications for this method include those requiring a transparent or insulating substrate, such as display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard and high temperature electronics. 15 figs.

  15. Electrochemical oxidation of biological pretreated and membrane separated landfill leachate concentrates on boron doped diamond anode

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Bo, E-mail: 357436235@qq.com [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); Yu, Zhiming, E-mail: zhiming@csu.edu.cn [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Wei, Qiuping, E-mail: qiupwei@csu.edu.cn [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Long, HangYu, E-mail: 55686385@qq.com [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); Xie, Youneng, E-mail: 1187272844@qq.com [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); Wang, Yijia, E-mail: 503630433@qq.com [School of Materials Science and Engineering, Central South University, Changsha 410083 (China)

    2016-07-30

    Highlights: • High quality boron-doped diamond film electrodes were synthesized on Nb substrates. • Electrochemical oxidation on boron-doped diamond anode is an effective method for treating landfill leachate concentrates. • Optimal operating conditions for electrochemical oxidation of landfill leachate concentrates is determined. • 87.5% COD removal and 74.06% NH{sub 3}−N removal were achieved after 6 h treatment. - Abstract: In the present study, the high quality boron-doped diamond (BDD) electrodes with excellent electrochemical properties were deposited on niobium (Nb) substrates by hot filament chemical vapor deposition (HFCVD) method. The electrochemical oxidation of landfill leachate concentrates from disc tube reverse osmosis (DTRO) process over a BDD anode was investigated. The effects of varying operating parameters, such as current density, initial pH, flow velocity and cathode material on degradation efficiency were also evaluated following changes in chemical oxygen demand (COD) and ammonium nitrogen (NH{sub 3}−N). The instantaneous current efficiency (ICE) was used to appraise different operating conditions. As a result, the best conditions obtained were as follows, current density 50 mA cm{sup −2}, pH 5.16, flow velocity 6 L h{sup −1}. Under these conditions, 87.5% COD and 74.06% NH{sub 3}−N removal were achieved after 6 h treatment, with specific energy consumption of 223.2 kWh m{sup −3}. In short, these results indicated that the electrochemical oxidation with BDD/Nb anode is an effective method for the treatment of landfill leachate concentrates.

  16. Structural Features of Boron-Doped Si(113) Surfaces Simulated by ab initio Calculations

    Institute of Scientific and Technical Information of China (English)

    LIAO Long-Zhong; LIU Zheng-Hui; ZHANG Zhao-Hui

    2008-01-01

    Based on ab initio calculations, boron-doped Si(113) surfaces have been simulated and atomic structures of the surfaces have been proposed. It has been determined that surface features of empty and filled states that are separately localized at pentamers and adatoms indicates a low surface density of B atoms, while it is attributed to heavy doping of B atoms at the second layer that pentamers and adatoms are both present in an image of scanning tunnelling microscopy. B doping at the second layer should be balanced by adsorbed B or Si atoms beside the adatoms and inserted B interstitials below the adatoms.

  17. Degradation of atrazine by electrochemical advanced oxidation processes using a boron-doped diamond anode

    OpenAIRE

    Borràs Cristòfol, Núria; Oliver Pujol, Ramon; Arias Tejerina, Concha; Brillas Coso, Enric

    2010-01-01

    Solutions of 30 mg L-1 of the herbicide atrazine have been degraded by environmentally friendly electrochemical advanced oxidation processes (EAOPs) such as anodic oxidation (AO), electro-Fenton (EF), and photoelectro-Fenton (PEF) using a small open and cylindrical cell with a boron-doped diamond (BDD) anode. AO has been carried out either with a stainless steel cathode or an O2 diffusion cathode able to generate H2O2. Hydroxyl radicals (•OH) formed at the BDD surface in all EAOPs and in t...

  18. Preparation of boron doped diamond modified by iridium for electroreduction of carbon dioxide (CO2)

    Science.gov (United States)

    Ichzan, A. M.; Gunlazuardi, J.; Ivandini, T. A.

    2017-04-01

    Electroreduction of carbon dioxide (CO2) at iridium oxide-modified boron-doped diamond (IrOx-BDD) electrodes in aqueous electrolytes was studied by voltammetric method. The aim of this study was to find out the catalytic effect of IrOx to produce fine chemicals contained of two or more carbon atoms (for example acetic acid) in high percentage. Characterization using FE-SEM and XPS indicated that IrO2 can be deposited at BDD electrode, whereas characterization using cyclic voltammetry indicated that the electrode was applicable to be used as working electrode for CO2 electroreduction.

  19. Anodic stripping voltammetry of nickel ions and nickel hydroxide nanoparticles at boron-doped diamond electrodes

    Science.gov (United States)

    Musyarofah, N. R. R.; Gunlazuardi, J.; Einaga, Y.; Ivandini, T. A.

    2017-04-01

    Anodic stripping voltammetry (ASV) of nickel ions in phosphate buffer solution (PBS) have been investigated at boron-doped diamond (BDD) electrodes. The deposition potential at 0.1 V (vs. Ag/AgCl) for 300 s in 0.1 M PBS pH 3 was found as the optimum condition. The condition was applied for the determination of nickel contained in nickel hydroxide nanoparticles. A linear calibration curve can be achieved of Ni(OH)2-NPs in the concentration range of x to x mM with an estimated limit of detection (LOD) of 5.73 × 10-6 mol/L.

  20. Preparation of hemoglobin-modified boron-doped diamond for acrylamide biosensors

    Science.gov (United States)

    Umam, K.; Saepudin, E.; Ivandini, T. A.

    2017-04-01

    Boron-doped diamond (BDD) electrode was modified with haemoglobin to develop electrochemical biosensors of acrylamide. Prior to modify with haemoglobin, the BDD was modified by gold nanoparticles to increase the affinity of BDD against haemoglobin. The electrochemical behaviour of the electrode in the presence of acrylamide was studied in comparison to haemoglobin-modified gold electrodes. Cyclic voltammetry indicated the optimum responses in 0.1 M sodium acetate buffer at pH 5. The responses were linear to the acrylamide concentration range of 5-50 μM with an estimated detection limit of 5.14 μM, suggesting that the electrode was promising for acrylamide biosensors.

  1. Detecting CO, NO and NO2 gases by Boron-doped graphene nanoribbon molecular devices

    Science.gov (United States)

    Xie, Zhen; Zuo, Xi; Zhang, Guang-Ping; Li, Zong-Liang; Wang, Chuan-Kui

    2016-07-01

    Combining nonequilibrium Green's function method and density functional theory, an azulene-like dipole molecule sandwiched between two graphene nanoribbon (GNR) electrodes are explored to gas sensors. Both the pristine zigzag edged GNR and Boron-doped armchair-edged GNR are considered in this study. It shows that certain specific toxic molecules CO, NO and NO2 would adsorb on the doped Boron atoms of the GNR, resulting in a dramatic change in the current-voltage profile. Changes in the subbands of electrodes, induced by gas adsorption, are responsible for the variation of current. The devices are thus demonstrated to be sensitive nanosensors for these toxic gases.

  2. Laser-excited photoemission spectroscopy study of superconducting boron-doped diamond

    Directory of Open Access Journals (Sweden)

    K. Ishizaka, R. Eguchi, S. Tsuda, T. Kiss, T. Shimojima, T. Yokoya, S. Shin, T. Togashi, S. Watanabe, C.-T. Chen, C.Q. Zhang, Y. Takano, M. Nagao, I. Sakaguchi, T. Takenouchi and H. Kawarada

    2006-01-01

    Full Text Available We have investigated the low-energy electronic state of boron-doped diamond thin film by the laser-excited photoemission spectroscopy. A clear Fermi-edge is observed for samples doped above the semiconductor–metal boundary, together with the characteristic structures at 150×n meV possibly due to the strong electron–lattice coupling effect. In addition, for the superconducting sample, we observed a shift of the leading edge below Tc indicative of a superconducting gap opening. We discuss the electron–lattice coupling and the superconductivity in doped diamond.

  3. First results on charge collection efficiency of heavily irradiated microstrip sensors fabricated on oxygenated p-type silicon

    Energy Technology Data Exchange (ETDEWEB)

    Casse, G. E-mail: gcasse@hep.ph.liv.ac.uk; Allport, P.P.; Marti i Garcia, S.; Lozano, M.; Turner, P.R

    2004-02-01

    Heavy hadron irradiation leads to type inversion of n-type silicon detectors. After type inversion, the charge collected at low bias voltages by silicon microstrip detectors is higher when read out from the n-side compared to p-side read out. The n-side read out has been successfully used in combination with oxygen-enriched n-type silicon substrate to maximise the radiation hardness of microstrip detectors. Alternatively, the n-side read out can be implemented on p-type substrates reducing the complexity of fabrication. Miniature silicon microstrip detectors made on standard and oxygen-enriched p-type substrate have been produced. The charge collection properties of such detectors with and without oxygenation are here compared for the first time after severe charged hadron irradiation.

  4. Auger recombination in heavily doped shallow-emitter silicon p-n-junction solar cells, diodes, and transistors

    Science.gov (United States)

    Shibib, M. A.; Lindholm, F. A.; Fossum, J. G.

    1979-01-01

    A rigorous analytic evaluation of an emitter model that includes Auger recombination but excludes bandgap narrowing is presented. It is shown that such a model cannot explain the experimentally observed values of the open-circuit voltage in p-n-junction silicon solar cells. Thus physical mechanisms in addition to Auger recombination are responsible for the experimentally observed values of the open-circuit voltage in silicon solar cells and the common-emitter current gain in bipolar transistors.

  5. Empirical determination of the energy band gap narrowing in p{sup +} silicon heavily doped with boron

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Di, E-mail: di.yan@anu.edu.au; Cuevas, Andres [Research School of Engineering, The Australian National University, Canberra ACT 0200 (Australia)

    2014-11-21

    In the analysis of highly doped silicon, energy band gap narrowing (BGN) and degeneracy effects may be accounted for separately, as a net BGN in conjunction with Fermi-Dirac statistics, or lumped together in an apparent BGN used with Boltzmann statistics. This paper presents an experimental study of silicon highly doped with boron, with the aim of evaluating the applicability of previously reported BGN models. Different boron diffusions covering a broad range of dopant densities were prepared, and their characteristic recombination current parameters J{sub 0} were measured using a contactless photoconductance technique. The BGN was subsequently extracted by matching theoretical simulations of carrier transport and recombination in each of the boron diffused regions and the measured J{sub 0} values. An evaluation of two different minority carrier mobility models indicates that their impact on the extraction of the BGN is relatively small. After considering possible uncertainties, it can be concluded that the BGN is slightly larger in p{sup +} silicon than in n{sup +} silicon, in qualitative agreement with theoretical predictions by Schenk. Nevertheless, in quantitative terms that theoretical model is found to slightly underestimate the BGN in p{sup +} silicon. With the two different parameterizations derived in this paper for the BGN in p{sup +} silicon, both statistical approaches, Boltzmann and Fermi-Dirac, provide a good agreement with the experimental data.

  6. High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties

    Science.gov (United States)

    Yeom, Da-Young; Jeon, Woojin; Tu, Nguyen Dien Kha; Yeo, So Young; Lee, Sang-Soo; Sung, Bong June; Chang, Hyejung; Lim, Jung Ah; Kim, Heesuk

    2015-05-01

    For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000 °C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B2O3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.

  7. Boron doped ZnO embedded into reduced graphene oxide for electrochemical supercapacitors

    Science.gov (United States)

    Alver, Ü.; Tanrıverdi, A.

    2016-08-01

    In this work, reduced graphene oxide/boron doped zinc oxide (RGO/ZnO:B) composites were fabricated by a hydrothermal process and their electrochemical properties were investigated as a function of dopant concentration. First, boron doped ZnO (ZnO:B) particles was fabricated with different boron concentrations (5, 10, 15 and 20 wt%) and then ZnO:B particles were embedded into RGO sheets. The physical properties of sensitized composites were characterized by XRD and SEM. Characterization indicated that the ZnO:B particles with plate-like structure in the composite were dispersed on graphene sheets. The electrochemical properties of the RGO/ZnO:B composite were investigated through cyclic voltammetry, galvanostatic charge/discharge measurements in a 6 M KOH electrolyte. Electrochemical measurements show that the specific capacitance values of RGO/ZnO:B electrodes increase with increasing boron concentration. RGO/ZnO:B composite electrodes (20 wt% B) display the specific capacitance as high as 230.50 F/g at 5 mV/s, which is almost five times higher than that of RGO/ZnO (52.71 F/g).

  8. Fabrication of vertically aligned diamond whiskers from highly boron-doped diamond by oxygen plasma etching.

    Science.gov (United States)

    Terashima, Chiaki; Arihara, Kazuki; Okazaki, Sohei; Shichi, Tetsuya; Tryk, Donald A; Shirafuji, Tatsuru; Saito, Nagahiro; Takai, Osamu; Fujishima, Akira

    2011-02-01

    Conductive diamond whiskers were fabricated by maskless oxygen plasma etching on highly boron-doped diamond substrates. The effects of the etching conditions and the boron concentration in diamond on the whisker morphology and overall substrate coverage were investigated. High boron-doping levels (greater than 8.4 × 10(20) cm(-3)) are crucial for the formation of the nanosized, densely packed whiskers with diameter of ca. 20 nm, length of ca. 200 nm, and density of ca. 3.8 × 10(10) cm(-2) under optimal oxygen plasma etching conditions (10 min at a chamber pressure of 20 Pa). Confocal Raman mapping and scanning electron microscopy illustrate that the boron distribution in the diamond surface region is consistent with the distribution of whisker sites. The boron dopant atoms in the diamond appear to lead to the initial fine column formation. This simple method could provide a facile, cost-effective means for the preparation of conductive nanostructured diamond materials for electrochemical applications as well as electron emission devices.

  9. Electrochemical Incineration of Phenolic Compounds from the Hydrocarbon Industry Using Boron-Doped Diamond Electrodes

    Directory of Open Access Journals (Sweden)

    Alejandro Medel

    2012-01-01

    Full Text Available Electrochemical incineration using boron-doped diamond electrodes was applied to samples obtained from a refinery and compared to the photo-electro-Fenton process in order to selectively eliminate the phenol and phenolic compounds from a complex matrix. Due to the complex chemical composition of the sample, a pretreatment to the sample in order to isolate the phenolic compounds was applied. The effects of the pretreatment and of pH on the degradation of the phenolic compounds were evaluated. The results indicate that the use of a boron-doped diamond electrode in an electrochemical incineration process mineralizes 99.5% of the phenolic sample content. Working in acidic medium (pH = 1, and applying 2 A at 298 K under constant stirring for 2 hours, also results in the incineration of the reaction intermediates reflected by 97% removal of TOC. In contrast, the photo-electro-Fenton process results in 99.9% oxidation of phenolic compounds with only a 25.69% removal of TOC.

  10. Boron-doped hydrogenated Al{sub 3} clusters: A material for hydrogen storage

    Energy Technology Data Exchange (ETDEWEB)

    Muz, İskender, E-mail: iskender.muz@nevsehir.edu.tr [Faculty of Education, Department of Science Education, Nevsehir Haci Bektas Veli University, 50300, Nevsehir (Turkey); Atiş, Murat [Kayseri Vocational School, Electricity and Energy Department, Erciyes University, 38300, Kayseri (Turkey)

    2016-05-15

    The energetic and structural stabilities of Al{sub 3}BH{sub 2n} (n = 0–6) clusters are investigated using ab initio calculations. Structural isomers are found using the stochastic search method to search for minima structures, followed by B3LYP optimizations; single-point CCSD(T) calculations are performed to compute relative energies. Chemical bonding analysis is also performed using the adaptive natural density partitioning method to investigate the chemical bonding in the clusters and to elucidate their structural evolution. Our results and analyses indicate that the stability of the boron-doped hydrogenated Al{sub 3} clusters increases as more hydrogen molecules are adsorbed, whereas the H{sub 2} loss energy decreases. The results are in good agreement with available theoretical findings. - Highlights: • The boron-doped hydrogenated Al{sub 3} clusters are generated using stochastic search method. • The energetic and structural stabilities are investigated in detail. • The chemical bonding analysis is performed by using AdNDP analysis. • The doping by boron allows development of better aluminum-based metal hydrides.

  11. Preparation of platinum-modified boron-doped diamond for electroreduction of CO2

    Science.gov (United States)

    Jasril; Gunlazuardi, J.; Ivandini, T. A.

    2017-04-01

    Metal-modified boron-doped diamond has been prepared for preliminary study of CO2 electroreduction. Pt was electrodeposited at boron-doped diamond (BDD) by using chronoamperometry technique. The precursor metal solution concentration of 6 mM was applied with deposition potentials of -0.3 V (vs Ag/AgCl). Characterization by using FESEM and XPS confirmed the presence of Pt on the surface of BDD. Cyclic voltammetry was applied to obtain an optimum condition for electroreduction of CO2. CO2 dissolved in 0.1 M NaCl and 0.1 M Na2SO4 solutions were applied. A reduction peak, attributable to CO2, appeared at a potential of -0.7 V (vs Ag/AgCl) in NaCl solution, while no peak was observed in Na2SO4 solution. The result indicated that the metal-modified electrodes has successfully prepared as a working electrode for CO2 electroreduction.

  12. Sequential Electrodeposition of Platinum-Ruthenium at Boron-Doped Diamond Electrodes for Methanol Oxidation

    Directory of Open Access Journals (Sweden)

    Ileana González-González

    2011-01-01

    Full Text Available Sequential electrodeposition of Pt and Ru on boron-doped diamond (BDD films, in 0.5 M H2SO4 by cyclic voltammetry, has been prepared. The potential cycling, in the aqueous solutions of the respective metals, was between 0.00 and 1.00 V versus Ag/AgCl. The catalyst composites, Pt and PtRu, deposited on BDD film substrates, were tested for methanol oxidation. The modified diamond surfaces were also characterized by scanning electron microscopy-X-ray fluorescence-energy dispersive spectroscopy, X-ray photoelectron spectroscopy, and Auger electron spectroscopy. The scanning Auger electron spectroscopy mapping showed the ruthenium signal only in areas where platinum was electrodeposited. Ruthenium does not deposit on the oxidized diamond surface of the boron-doped diamond. Particles with 5–10% of ruthenium with respect to platinum exhibited better performance for methanol oxidation in terms of methanol oxidation peak current and chronoamperometric current stability. The electrogenerated •OH radicals on BDD may interact with Pt surface, participating in the methanol oxidation as shown in oxidation current and the shift in the peak position. The conductive diamond surface is a good candidate as the support for the platinum electrocatalyst, because it ensures catalytic activity, which compares with the used carbon, and higher stability under severe anodic and cathodic conditions.

  13. Electrochemical Properties of Boron-Doped Diamond Electrodes Prepared by Hot Cathode Direct Current Plasma CVD

    Directory of Open Access Journals (Sweden)

    Hong Yan PENG

    2016-05-01

    Full Text Available A series of boron-doped diamond (BDD films were deposited by using a hot cathode direct current plasma chemical vapor deposition(HCDC-PCVD system with different ratios of CH4/H2/B(OCH33 (trimethylborate gas mixture. The morphology, structure and quality of BDD films were controled by SEM, XRD and Raman measurements. The electrochemical properties of the BDD films were investigated by electrochemical methods. Cyclic voltammetric performances of the BDD films indicated that the main determinant in the electrochemical characteristics of BDD films was the boron doping amount. The threshold potential for oxygen evolution increased from 1 V to 2.5 V. Meanwhile, the electrochemical potential window of BDD films was enlarged from 2.2 V to 4.5 V when the B content was increased from 1.75 × 1019cm-3 to 2.4 × 1021 cm−3. The cyclic voltammograms of BDD films in K4Fe(CN6 and K3Fe(CN6 mixed solution indicated that the behavior of Fe(CN6-3/-4 redox couple could be regarded as semi-reversible.DOI: http://dx.doi.org/10.5755/j01.ms.22.2.12926

  14. Rectifying Properties of a Nitrogen/Boron-Doped Capped-Carbon-Nanotube-Based Molecular Junction

    Institute of Scientific and Technical Information of China (English)

    ZHAO Peng; LIU De-Sheng; ZHANG Ying; WANG Pei-Ji; ZHANG Zhong

    2011-01-01

    @@ Based on the non-equilibrium Green's function method and first-principles density functional theory calculations, we investigate the electronic transport properties of a nitrogen/boron-doped capped-single-walled carbonnanotube-based molecular junction.Obvious rectifying behavior is observed and it is strongly dependent on the doping site.The best rectifying performance can be carried out when the nitrogen/boron atom dopes at a carbon site in the second layer.Moreover, the rectifying performance can be further improved by adjusting the distance between the Cso nanotube caps.%Based on the non-equilibrium Green's function method and first-principles density functional theory calculations, we investigate the electronic transport properties of a nitrogen/boron-doped capped-single-walled carbon-nanotube-based molecular junction. Obvious rectifying behavior is observed and it is strongly dependent on the doping site. The best rectifying performance can be carried out when the nitrogen/boron atom dopes at a carbon site in the second layer. Moreover, the rectifying performance can be further improved by adjusting the distance between the C60 nanotube caps.

  15. Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films

    DEFF Research Database (Denmark)

    Meijs, Suzan; McDonald, Matthew; Sørensen, Søren;

    2015-01-01

    The aim of this study was to investigate the feasibility of depositing a thin layer of boron-doped nanocrystalline diamond (B-NCD) on titanium nitride (TiN) coated electrodes and the effect this has on charge injection properties. The charge storage capacity increased by applying the B-NCD film...

  16. Boron-Doped Graphite for High Work Function Carbon Electrode in Printable Hole-Conductor-Free Mesoscopic Perovskite Solar Cells.

    Science.gov (United States)

    Duan, Miao; Tian, Chengbo; Hu, Yue; Mei, Anyi; Rong, Yaoguang; Xiong, Yuli; Xu, Mi; Sheng, Yusong; Jiang, Pei; Hou, Xiaomeng; Zhu, Xiaotong; Qin, Fei; Han, Hongwei

    2017-09-20

    Work function of carbon electrodes is critical in obtaining high open-circuit voltage as well as high device performance for carbon-based perovskite solar cells. Herein, we propose a novel strategy to upshift work function of carbon electrode by incorporating boron atom into graphite lattice and employ it in printable hole-conductor-free mesoscopic perovskite solar cells. The high-work-function boron-doped carbon electrode facilitates hole extraction from perovskite as verified by photoluminescence. Meanwhile, the carbon electrode is endowed with an improved conductivity because of a higher graphitization carbon of boron-doped graphite. These advantages of the boron-doped carbon electrode result in a low charge transfer resistance at carbon/perovskite interface and an extended carrier recombination lifetime. Together with the merit of both high work function and conductivity, the power conversion efficiency of hole-conductor-free mesoscopic perovskite solar cells is increased from 12.4% for the pristine graphite electrode-based cells to 13.6% for the boron-doped graphite electrode-based cells with an enhanced open-circuit voltage and fill factor.

  17. Cathodic reductive coupling of methyl cinnamate on boron-doped diamond electrodes and synthesis of new neolignan-type products.

    Science.gov (United States)

    Kojima, Taiki; Obata, Rika; Saito, Tsuyoshi; Einaga, Yasuaki; Nishiyama, Shigeru

    2015-01-01

    The electroreduction reaction of methyl cinnamate on a boron-doped diamond (BDD) electrode was investigated. The hydrodimer, dimethyl 3,4-diphenylhexanedioate (racemate/meso = 74:26), was obtained in 85% yield as the major product, along with small amounts of cyclic methyl 5-oxo-2,3-diphenylcyclopentane-1-carboxylate. Two new neolignan-type products were synthesized from the hydrodimer.

  18. Green synthesis of boron doped graphene and its application as high performance anode material in Li ion battery

    Energy Technology Data Exchange (ETDEWEB)

    Sahoo, Madhumita; Sreena, K.P.; Vinayan, B.P.; Ramaprabhu, S., E-mail: ramp@iitm.ac.in

    2015-01-15

    Graphical abstract: Boron doped graphene (B-G), synthesized by simple hydrogen induced reduction technique using boric acid as boron precursor, have more uneven surface as a result of smaller bonding distance of boron compared to carbon, showed high capacity and high rate capability compared to pristine graphene as an anode material for Li ion battery application. - Abstract: The present work demonstrates a facile route for the large-scale, catalyst free, and green synthesis approach of boron doped graphene (B-G) and its use as high performance anode material for Li ion battery (LIB) application. Boron atoms were doped into graphene framework with an atomic percentage of 5.93% via hydrogen induced thermal reduction technique using graphite oxide and boric acid as precursors. Various characterization techniques were used to confirm the boron doping in graphene sheets. B-G as anode material shows a discharge capacity of 548 mAh g{sup −1} at 100 mA g{sup −1} after 30th cycles. At high current density value of 1 A g{sup −1}, B-G as anode material enhances the specific capacity by about 1.7 times compared to pristine graphene. The present study shows a simplistic way of boron doping in graphene leading to an enhanced Li ion adsorption due to the change in electronic states.

  19. ortho-Selective phenol-coupling reaction by anodic treatment on boron-doped diamond electrode using fluorinated alcohols.

    Science.gov (United States)

    Kirste, Axel; Nieger, Martin; Malkowsky, Itamar M; Stecker, Florian; Fischer, Andreas; Waldvogel, Siegfried R

    2009-01-01

    Enlarged scope by fluorinated mediators: Oxyl radicals are easily formed on boron-doped diamond (BDD) electrodes and can be exploited for the ortho-selective coupling to the corresponding biphenols (see scheme). At partial conversion, a clean transformation is achieved that can be applied to electron-rich as well as fluorinated phenols.

  20. Electrochemical Biosensor Based on Boron-Doped Diamond Electrodes with Modified Surfaces

    Directory of Open Access Journals (Sweden)

    Yuan Yu

    2012-01-01

    Full Text Available Boron-doped diamond (BDD thin films, as one kind of electrode materials, are superior to conventional carbon-based materials including carbon paste, porous carbon, glassy carbon (GC, carbon nanotubes in terms of high stability, wide potential window, low background current, and good biocompatibility. Electrochemical biosensor based on BDD electrodes have attracted extensive interests due to the superior properties of BDD electrodes and the merits of biosensors, such as specificity, sensitivity, and fast response. Electrochemical reactions perform at the interface between electrolyte solutions and the electrodes surfaces, so the surface structures and properties of the BDD electrodes are important for electrochemical detection. In this paper, the recent advances of BDD electrodes with different surfaces including nanostructured surface and chemically modified surface, for the construction of various electrochemical biosensors, were described.

  1. New Pathways and Metrics for Enhanced, Reversible Hydrogen Storage in Boron-Doped Carbon Nanospaces

    Energy Technology Data Exchange (ETDEWEB)

    Pfeifer, Peter [University of Missouri; Wexler, Carlos [University of Missouri; Hawthorne, M. Frederick [University of Missouri; Lee, Mark W. [University of Missouri; Jalistegi, Satish S. [University of Missouri

    2014-08-14

    This project, since its start in 2007—entitled “Networks of boron-doped carbon nanopores for low-pressure reversible hydrogen storage” (2007-10) and “New pathways and metrics for enhanced, reversible hydrogen storage in boron-doped carbon nanospaces” (2010-13)—is in support of the DOE's National Hydrogen Storage Project, as part of the DOE Hydrogen and Fuel Cells Program’s comprehensive efforts to enable the widespread commercialization of hydrogen and fuel cell technologies in diverse sectors of the economy. Hydrogen storage is widely recognized as a critical enabling technology for the successful commercialization and market acceptance of hydrogen powered vehicles. Storing sufficient hydrogen on board a wide range of vehicle platforms, at energy densities comparable to gasoline, without compromising passenger or cargo space, remains an outstanding technical challenge. Of the main three thrust areas in 2007—metal hydrides, chemical hydrogen storage, and sorption-based hydrogen storage—sorption-based storage, i.e., storage of molecular hydrogen by adsorption on high-surface-area materials (carbons, metal-organic frameworks, and other porous organic networks), has emerged as the most promising path toward achieving the 2017 DOE storage targets of 0.055 kg H2/kg system (“5.5 wt%”) and 0.040 kg H2/liter system. The objective of the project is to develop high-surface-area carbon materials that are boron-doped by incorporation of boron into the carbon lattice at the outset, i.e., during the synthesis of the material. The rationale for boron-doping is the prediction that boron atoms in carbon will raise the binding energy of hydro- gen from 4-5 kJ/mol on the undoped surface to 10-14 kJ/mol on a doped surface, and accordingly the hydro- gen storage capacity of the material. The mechanism for the increase in binding energy is electron donation from H2 to electron-deficient B atoms, in the form of sp2 boron-carbon bonds. Our team is proud to have

  2. Effects of the surface-adsorption of boron-doped diamond electrode on its electrochemical behavior

    Institute of Scientific and Technical Information of China (English)

    LIU Fengbin; LI Xuemin; WANG Jiadao; LIU Bing; CHEN Darong

    2006-01-01

    To elucidate the effects of the hydro- genation and oxygenation of the boron-doped diamond (BDD) electrode on its electrochemical behaviors, the surface morphologies and phases of the two surface-adsorption BDD films have been investigated and the cyclic voltammograms and AC impedance spectra have been measured at these two BDD electrodes. The results indicate that compared with the hydrogen-adsorption BDD film, oxygen-adsor- ption BDD film is less conductive, and has a larger surface roughness and a lower sp3/sp2 ratio. The oxygenated BDD film electrode possesses a wider electrochemical window, larger diamond film resistance and capacitance and a larger polarization resistance than hydrogenated BDD electrode. In addition, the effect mechanism of the surface-adsorption of BDD electrode on its electrochemical behaviors has been discussed.

  3. Domestic and Industrial Water Disinfection Using Boron-Doped Diamond Electrodes

    Science.gov (United States)

    Rychen, Philippe; Provent, Christophe; Pupunat, Laurent; Hermant, Nicolas

    This chapter first describes main properties and manufacturing process (production using HF-CVD, quality-control measurements, etc.) of diamond electrodes and more specifically boron-doped diamond (BDD) electrodes. Their exceptional properties make such electrodes particularly suited for many disinfection applications as thanks to their wide working potential window and their high anodic potential, they allow generating a mixture of powerful oxidizing species mainly based on active oxygen and peroxides. Such mixture of disinfecting agents is far more efficient than conventional chemical or physical known techniques. Their efficiency was tested against numerous microorganisms and then proved to be greater than conventional methods. All bacteria and viruses tested up to date were inactivated 3-5 times faster with a treatment based on with BDD electrodes and the DiaCellⓇ technology than with other techniques. Several applications, either industrial or private (wellness and home use), are discussed with a focus on the dedicated products and the main technology advantages.

  4. Influence of boron doping on mechanical and tribological properties in multilayer CVD-diamond coating systems

    Indian Academy of Sciences (India)

    SAJAD HUSSAIN DIN; M A SHAH; N A SHEIKH; K A NAJAR; K RAMASUBRAMANIAN; S BALAJI; M S RAMACHANDRA RAO

    2016-12-01

    Titanium alloy (Ti6Al4V) substrates were deposited with smooth multilayer coatings, by hot filament chemical vapour deposition technique. The effect of boron doping on lattice parameter, residual stresses, hardness and coefficient of friction in multilayer-diamond coating system was studied. The frictional behaviour of the coatings was studied using a ball-on-disc micro-tribometer by sliding the coated samples of titanium alloy (Ti6Al4V) substrates against alumina (Al$_2$O$_3$) balls, and increasing normal load from 1 to 10N. The average friction coefficient decreased from 0.36 to 0.29 for undoped multilayer-diamond coating system and from 0.33 to 0.18 for borondoped (BD) multilayer-diamond coating system. The average indentation depths for undoped and BD multilayerdiamond coating systems were found to be equal to $\\sim$58 and $\\sim$65 nm, respectively, and their hardness values were 60 and 55~GPa, respectively.

  5. 11B-NMR study in boron-doped diamond films

    Directory of Open Access Journals (Sweden)

    H. Mukuda, T. Tsuchida, A. Harada, Y. Kitaoka, T. Takenouchi, Y. Takano, M. Nagao, I. Sakaguchi and H. Kawarada

    2006-01-01

    Full Text Available We have investigated an origin of the superconductivity discovered in boron (B-doped diamonds by means of 11B-NMR on heteroepitaxially grown (1 1 1 and (1 0 0 films and polycrystalline film. The characteristic difference of B-NMR spectral shape for the (1 1 1 and (1 0 0 thin films is demonstrated as arising from the difference in the concentration (nB(1 of boron substituted for carbon. It is revealed from a scaling between a superconducting transition temperature Tc and nB(1 that the holes doped into diamond via the substitution of boron for carbon are responsible for the onset of superconductivity. The result suggests that the superconductivity in boron-doped diamond is mediated by the electron–phonon interaction brought about a high Debye temperature ~1860 K characteristic for the diamond structure.

  6. Boron-doped diamond electrode: Preparation, characterization and application for electrocatalytic degradation of m-dinitrobenzene.

    Science.gov (United States)

    Bai, Hongmei; He, Ping; Pan, Jing; Chen, Jingchao; Chen, Yang; Dong, Faqing; Li, Hong

    2017-07-01

    Boron-doped diamond (BDD) electrode was successfully prepared via microwave plasma chemical vapor deposition method and it was used in electrocatalytic degradation of m-dinitrobenzene (m-DNB). The electrocatalytic degradation efficiency of m-DNB was evaluated under different experimental parameters including current density, temperature, pH, Na2SO4 concentration and initial m-DNB concentration. Under optimal parameters, degradation efficiency of m-DNB reached up to 82.7% after 150min. The degradation process of m-DNB was fitted well with pseudo first-order kinetics. Moreover, UV and HPLC analyses implied that m-DNB was totally destroyed and mineralized after 240min degradation, and the proposed mechanism during the electrocatalytic degradation process was analyzed. All these results demonstrated that BDD electrode possessed excellent electrocatalytic property and showed a great potential application in wastewater treatment.

  7. Boron-Doped Nanocrystalline Diamond Electrodes for Neural Interfaces: In vivo Biocompatibility Evaluation.

    Science.gov (United States)

    Alcaide, María; Taylor, Andrew; Fjorback, Morten; Zachar, Vladimir; Pennisi, Cristian P

    2016-01-01

    Boron-doped nanocrystalline diamond (BDD) electrodes have recently attracted attention as materials for neural electrodes due to their superior physical and electrochemical properties, however their biocompatibility remains largely unexplored. In this work, we aim to investigate the in vivo biocompatibility of BDD electrodes in relation to conventional titanium nitride (TiN) electrodes using a rat subcutaneous implantation model. High quality BDD films were synthesized on electrodes intended for use as an implantable neurostimulation device. After implantation for 2 and 4 weeks, tissue sections adjacent to the electrodes were obtained for histological analysis. Both types of implants were contained in a thin fibrous encapsulation layer, the thickness of which decreased with time. Although the level of neovascularization around the implants was similar, BDD electrodes elicited significantly thinner fibrous capsules and a milder inflammatory reaction at both time points. These results suggest that BDD films may constitute an appropriate material to support stable performance of implantable neural electrodes over time.

  8. Covalent modification of boron-doped diamond electrodes with an imidazolium-based ionic liquid

    Energy Technology Data Exchange (ETDEWEB)

    Wang Mei [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France); School of Materials Science and Engineering, Shandong University, 19723 Jingshi Road, Jinan, Shandong Province (China); Schneider, Amene [Austrian Centre of Competence for Tribology, Viktor Kaplan Strasse 2, 2700, Wiener Neustadt (Austria); Niedziolka-Joensson, Joanna; Marcon, Lionel [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France); Ghodbane, Slimane; Steinmueller-Nethl, Doris [Rho-BeSt Coating GmbH, Exlgasse 20a, 6020 Innsbruck (Austria); Li Musen [School of Materials Science and Engineering, Shandong University, 19723 Jingshi Road, Jinan, Shandong Province (China); Boukherroub, Rabah [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France); Szunerits, Sabine, E-mail: sabine.szunerits@iri.univ-lille1.f [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France)

    2010-02-01

    An ionic liquid (IL, 1-(methylcarboxylic acid)-3-octylimidazolium-bis (trifluoromethylsulfonyl)imide) was covalently coupled onto a boron-doped diamond (BDD) surface through an esterification reaction. The resulting surface was characterized by X-ray photoelectron spectroscopy, water contact angle and electrochemical measurements. Selective electron transfer towards positively and negatively charged redox species was recorded. While the presence of Fe(CN){sub 6}{sup 4-} could be detected on the IL-modified BDD interface, no surface-immobilized Ru(NH{sub 3}){sub 6}{sup 3+} was recorded. The IL-modified BDD electrode showed in addition changes in surface wettability when immersed into aqueous solution containing different anions.

  9. Preparation and reactivity of carboxylic acid-terminated boron-doped diamond electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Niedziolka-Joensson, Joanna [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France); Boland, Susan; Leech, Donal [School of Chemistry, National University of Irland, Galway (Ireland); Boukherroub, Rabah [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France); Szunerits, Sabine, E-mail: sabine.szunerits@iri.univ-lille1.f [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France)

    2010-01-01

    The paper reports on the formation of carboxy-terminated boron-doped diamond (BDD) electrodes. The carboxylic acid termination was prepared in a controlled way by reacting photochemically oxidized BDD with succinic anhydride. The resulting interface was readily employed for the linking of an amine-terminated ligand such as an osmium complex bearing an amine terminal group. The interfaces were characterized using X-ray photoelectron spectroscopy (XPS) and cyclic voltammetry (CV). Contact angle measurements were used to follow the changes in surface wetting properties due to surface functionalization. The chemical reactivity of the carboxyl-terminated BDD was investigated by covalent coupling of the acid groups to an amine-terminated osmium complex.

  10. Chemical Modification of Boron-Doped Diamond Electrodes for Applications to Biosensors and Biosensing.

    Science.gov (United States)

    Svítková, Jana; Ignat, Teodora; Švorc, Ľubomír; Labuda, Ján; Barek, Jiří

    2016-05-03

    Boron-doped diamond (BDD) is a prospective electrode material that possesses many exceptional properties including wide potential window, low noise, low and stable background current, chemical and mechanical stability, good biocompatibility, and last but not least exceptional resistance to passivation. These characteristics extend its usability in various areas of electrochemistry as evidenced by increasing number of published articles over the past two decades. The idea of chemically modifying BDD electrodes with molecular species attached to the surface for the purpose of creating a rational design has found promising applications in the past few years. BDD electrodes have appeared to be excellent substrate materials for various chemical modifications and subsequent application to biosensors and biosensing. Hence, this article presents modification strategies that have extended applications of BDD electrodes in electroanalytical chemistry. Different methods and steps of surface modification of this electrode material for biosensing and construction of biosensors are discussed.

  11. Standard electrochemical behavior of high-quality, boron-doped polycrystalline diamond thin-film electrodes

    Science.gov (United States)

    Granger; Witek; Xu; Wang; Hupert; Hanks; Koppang; Butler; Lucazeau; Mermoux; Strojek; Swain

    2000-08-15

    Standard electrochemical data for high-quality, boron-doped diamond thin-film electrodes are presented. Films from two different sources were compared (NRL and USU) and both were highly conductive, hydrogen-terminated, and polycrystalline. The films are acid washed and hydrogen plasma treated prior to use to remove nondiamond carbon impurity phases and to hydrogen terminate the surface. The boron-doping level of the NRL film was estimated to be in the mid 1019 B/cm3 range, and the boron-doping level of the USU films was approximately 5 x 10(20) B/cm(-3) based on boron nuclear reaction analysis. The electrochemical response was evaluated using Fe-(CN)6(3-/4-), Ru(NH3)6(3+/2+), IrCl6(2-/3-), methyl viologen, dopamine, ascorbic acid, Fe(3+/2+), and chlorpromazine. Comparisons are made between the apparent heterogeneous electron-transfer rate constants, k0(app), observed at these high-quality diamond films and the rate constants reported in the literature for freshly activated glassy carbon. Ru(NH3)6(3+/2+), IrCl6(2-/3-), methyl viologen, and chlorpromazine all involve electron transfer that is insensitive to the diamond surface microstructure and chemistry with k0(app) in the 10(-2)-10(-1) cm/s range. The rate constants are mainly influenced by the electronic properites of the films. Fe(CN)6(3-/4-) undergoes electron transfer that is extremely sensitive to the surface chemistry with k0(app) in the range of 10(-2)-10(-1) cm/s at the hydrogen-terminated surface. An oxygen surface termination severely inhibits the rate of electron transfer. Fe(3+/2+) undergoes slow electron transfer at the hydrogen-terminated surface with k0(app) near 10(-5) cm/s. The rate of electron transfer at sp2 carbon electrodes is known to be mediated by surface carbonyl functionalities; however, this inner-sphere, catalytic pathway is absent on diamond due to the hydrogen termination. Dopamine, like other catechol and catecholamines, undergoes sluggish electron transfer with k0(app) between 10

  12. Detection of aniline at boron-doped diamond electrodes with cathodic stripping voltammetry.

    Science.gov (United States)

    Spătaru, Tanţa; Spătaru, Nicolae; Fujishima, Akira

    2007-09-15

    Boron-doped diamond (BDD) electrodes were used to investigate the possibility of detecting aniline by linear-sweep cathodic stripping voltammetry. It was found that the dimeric species (p-aminodiphenylamine and benzidine) formed by anodic oxidation of aniline during the accumulation period are involved in electrochemically reversible redox processes and, in acidic media, the shape of the stripping voltammetric response is suitable for aniline detection in the micromolar concentration range. The low background current of conductive diamond is an advantage compared to other electrode materials and allows a detection limit of 1muM. Weak adsorption properties and the extreme electrochemical stability are additional advantages of BDD and it was found that, even after long-time measurements, the electrode surface can regain its initial activity by an anodic polarization in the potential region of water decomposition.

  13. Electroreduction of CO{sub 2} using copper-deposited on boron-doped diamond (BDD)

    Energy Technology Data Exchange (ETDEWEB)

    Panglipur, Hanum Sekar; Ivandini, Tribidasari A., E-mail: ivandini.tri@sci.ui.ac.id [Department of Chemistry, FMIPA, Universitas Indonesia, Kampus UI Depok (Indonesia); Einaga, Yasuaki [Department of Chemistry, Keio University (Japan); Wibowo, Rahmat

    2016-04-19

    Electroreduction of CO{sub 2} was studied at copper-modified boron-doped diamond (Cu-BDD) electrodes as the working electrode. The Cu-BDD electrodes were prepared by electrochemical reduction with various concentrations of CuSO{sub 4} solutions. FE-SEM was utilized to characterize the electrodes. At Cu-BDD electrodes, a reduction peak at around -1.2 V (vs Ag/AgCl) attributtable to CO{sub 2} reductions could be observed by cyclic voltammetry technique of CO{sub 2} bubbled in water containing 0.1M NaCl. Accordingly, electroreduction of CO{sub 2} was conducted at -1.2 V (vs Ag/AgCl) using amperometry technique. The chemical products of the electroreduction analyzed by using HPLC showed the formation of formaldehyde, formic acid, and acetic acid at Cu-BDD electrodes.

  14. Hydroxide Ion Oxidation in Aqueous Solutions Using Boron-Doped Diamond Electrodes.

    Science.gov (United States)

    Irkham; Watanabe, Takeshi; Einaga, Yasuaki

    2017-07-05

    The electrochemical oxidation behavior of hydroxide ions at the surface of boron-doped diamond (BDD) electrodes is presented. The hydroxide ion oxidation behavior was found to be affected by the surface conditions of the BDD electrode. Over the NaOH concentration range of 0.5-10 mM, a well-defined voltammetric wave attributed to hydroxide ion oxidation was observed at ∼1.25 V versus a Ag/AgCl reference electrode when using an anodically oxidized BDD (AO-BDD) electrode, while it was observed at around ∼1.15 V when a cathodically reduced BDD (CR-BDD) electrode was used. Although the hydroxide ion oxidation profiles were slightly different for the AO-BDD and CR-BDD electrodes, the peak currents was each found to have linear relationships with the NaOH concentration over the same range.

  15. Electrochemical behavior of nitrogen gas species adsorbed onto boron-doped diamond (BDD) electrodes.

    Science.gov (United States)

    Manzo-Robledo, A; Lévy-Clément, C; Alonso-Vante, N

    2007-11-06

    The adsorption of nitrogen species, in neutral electrolyte solutions, onto boron-doped diamond (BDD) electrode surfaces from dissolved NO2, NO, and N2O gases was induced at 0 V/SCE. Modified BDD electrode surfaces showed a different electrochemical response toward the hydrogen evolution reaction than did a nonmodified electrode surface in electrolyte base solution. The formation of molecular hydrogen and nitrogen gaseous species was confirmed by the online differential electrochemical mass spectrometry (DEMS) technique. Among the three nitrogen oxides gases, NO2 substantially modifies the electrolyte via hydrolysis leading to the formation of NO3- and its adsorption on the BDD electrode surface. The BDD/(NO3-) interface was the only N2O and N2 species generating system.

  16. Boron-doped nanocrystalline diamond electrodes for neural interfaces: In vivo biocompatibility evaluation

    Directory of Open Access Journals (Sweden)

    María eAlcaide

    2016-03-01

    Full Text Available Boron-doped nanocrystalline diamond (BDD electrodes have recently attracted attention as materials for neural electrodes due to their superior physical and electrochemical properties, however their biocompatibility remains largely unexplored. In this work, we aim to investigate the in vivo biocompatibility of BDD electrodes in relation to conventional titanium nitride (TiN electrodes using a rat subcutaneous implantation model. High quality BDD films were synthesized on electrodes intended for use as an implantable neurostimulation device. After implantation for 2 and 4 weeks, tissue sections adjacent to the electrodes were obtained for histological analysis. Both types of implants were contained in a thin fibrous encapsulation layer, the thickness of which decreased with time. Although the level of neovascularization around the implants was similar, BDD electrodes elicited significantly thinner fibrous capsules and a milder inflammatory reaction at both time points. These results suggest that BDD films may constitute an appropriate material to support stable performance of implantable neural electrodes over time.

  17. Benzene Oxidation on Boron-Doped Diamond Electrode: Electrochemical-Impedance Study of Adsorption Effects

    Directory of Open Access Journals (Sweden)

    Yuri Pleskov

    2012-01-01

    Full Text Available Benzene oxidation at a boron-doped diamond anode in 0.5 M K2SO4 aqueous solution is studied by cyclic voltammetry and electrochemical impedance spectroscopy. It is shown by measurements of differential capacitance and anodic current that in the ideal-polarizability potential region benzene either is not adsorbed at the diamond electrode or the benzene adsorption does not affect its capacitance. At more positive potentials, the adsorption of some intermediate of the benzene oxidation occurs at the electrode. The intermediate partially blocks the electrode surface and lowers the anodic current. The very fact of the electrode surface blocking is reflected in the complex-plane presentation of the impedance-potential plots.

  18. Effect of nitrogen on deposition and field emission properties of boron-doped micro-and nano-crystalline diamond films

    Institute of Scientific and Technical Information of China (English)

    L.A. Li; S.H. Cheng; H.D. Li; Q. Yu; J.W. Liu; X.Y. Lv

    2010-01-01

    In this paper, we report the effect of nitrogen on the deposition and properties of boron doped diamond films synthesized by hot filament chemical vapor deposition. The diamond films consisting of micro-grains (nano-grains) were realized with low (high) boron source flow rate during the growth processes. The transition of micro-grains to nano-grains is speculated to be strongly (weekly) related with the boron (nitrogen) flow rate. The grain size and Raman spectral feature vary insignificantly as a function of the nitrogen introduction at a certain boron flow rate. The variation of electron field emission characteristics dependent on nitrogen is different between microcrystalline and nanocrystalline boron doped diamond samples, which are related to the combined phase composition, boron doping level and texture structure. There is an optimum nitrogen proportion to improve the field emission properties of the boron-doped films.

  19. Boron-doped cadmium oxide composite structures and their electrochemical measurements

    Energy Technology Data Exchange (ETDEWEB)

    Lokhande, B.J., E-mail: bjlokhande@yahoo.com [Lab of Smart Mtrls Supercapacitive and Energy Studies, School of Physical Sciences, Solapur University, Solapur 413255, Maharashtra (India); Ambare, R.C. [Lab of Smart Mtrls Supercapacitive and Energy Studies, School of Physical Sciences, Solapur University, Solapur 413255, Maharashtra (India); Mane, R.S. [School of Physical Sciences, Swami Ramanand Teerth Marathwada University, Nanded 431606 (India); Bharadwaj, S.R. [Chemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India)

    2013-08-01

    Graphical abstract: Conducting nano-fibrous 3% boron doped cadmium oxide thin films were prepared by SILAR and its super capacitive properties were studied. - Highlights: • Samples are of nanofibrous nature. • All samples shows pseudocapacitive behavior. • 3% B doped CdO shows good specific capacitance. • 3% B doped CdO shows maximum 74.93% efficiency at 14 mA/cm{sup 2}. • 3% B doped CdO shows 0.8 Ω internal resistance. - Abstract: Boron-doped and undoped cadmium oxide composite nanostructures in thin film form were prepared onto stainless steel substrates by a successive ionic layer adsorption and reaction method using aqueous solutions of cadmium nitrate, boric acid and 1% H{sub 2}O{sub 2}. As-deposited films were annealed at 623 K for 1 h. The X-ray diffraction study shows crystalline behavior for both doped and undoped films with a porous topography and nano-wires type architecture, as observed in SEM image. Wettability test confirms the hydrophilic surface with 58° contact angle value. Estimated band gap energy is around 1.9 eV. Electrochemical behavior of the deposited films is attempted in 1 M KOH electrolyte using cyclic voltammetry (CV), electrochemical impedance spectroscopy and galvanostatic charge–discharge tests. Maximum values of the specific capacitance, specific energy and specific power obtained for 3% B doped CdO film at 2 mV/s scan rate are 20.05 F/g, 1.22 Wh/kg and 3.25 kW/kg, respectively.

  20. Electroanalytical determination of estriol hormone using a boron-doped diamond electrode.

    Science.gov (United States)

    Santos, Keliana D; Braga, Otoniel C; Vieira, Iolanda C; Spinelli, Almir

    2010-03-15

    A boron-doped diamond (BDD) electrode was used for the electroanalytical determination of estriol hormone in a pharmaceutical product and a urine sample taken during pregnancy by square-wave voltammetry. The optimized experimental conditions were: (1) a supporting electrolyte solution of NaOH at a pH of 12.0, and (2) a frequency of 20 Hz, a pulse height of 30 mV and a scan increment of 2 mV (for the square-wave parameters). The analytical curve was linear in the concentration range of 2.0 x 10(-7) to 2.0 x 10(-5) mol L(-1) (r=0.9994), with a detection limit of 1.7 x 10(-7) mol L(-1) and quantification limit of 8.5 x 10(-7) mol L(-1). Recoveries of estriol were in the range of 98.6-101.0%, for the pharmaceutical sample, and 100.2-103.4% for the urine sample, indicating no significant matrix interference effects on the analytical results. The accuracy of the electroanalytical methodology proposed was compared to that of the radioimmunoassay method. The values for the relative error between the proposed and standard methods were -7.29% for the determination of estriol in the commercial product and -4.98% in a urine sample taken during pregnancy. The results obtained suggest a reliable and interesting alternative method for electroanalytical determination of estriol in pharmaceutical products and urine samples taken during pregnancy using a boron-doped diamond electrode.

  1. Charge collection and charge sharing in heavily irradiated n-side read-out silicon microstrip detectors

    Energy Technology Data Exchange (ETDEWEB)

    Casse, G. E-mail: gcasse@hep.ph.liv.ac.uk; Allport, P.P.; Biagi, S.F.; Bowcock, T.J.V.; Greenall, A.; Turner, P.R

    2003-09-21

    Hadron radiation damage of n-bulk silicon detectors leads to a change in the effective space charge from positive to negative. This effect is called type inversion. Type inversion occurs after exposure to a fluence of a few 10{sup 13} proton cm{sup -2} and is characterized by migration of the diode junction to the n{sup +} implanted side (n-side) of the detector. After inversion the charge collection efficiency (CCE) of segmented detectors at low voltage is higher when the n-side, rather than the p-side, is read out. A p-side read out (p-in-n) and an n-side read out (n-in-n) strip detector with identical strip geometry and a wafer thickness of 200 {mu}m were simultaneously and inhomogenously irradiated to a maximum fluence of 7x10{sup 14} proton cm{sup -2} with 24 GeV c{sup -1} protons. A comparison of the CCE at very high irradiation doses is shown with these two read out geometries. The inhomogeneous irradiation induces an inhomogenous distribution of the effective space charge with a transverse component of the electric field that could in principle affect the resolution properties of the microstrip detector. The inter-strip charge sharing properties, as a function of dose, for the n-in-n detector have been measured. No systematic distortion of the reconstructed cluster position was detected within the limits of the measurement accuracy. The detectors were manufactured using oxygen enriched silicon substrates to limit the degradation of the full depletion voltage under charged hadron irradiation. The measured CCE confirms that the use of oxygenated n-in-n detectors is viable up to fluences of 7x10{sup 14} proton cm{sup -2}.

  2. Enhanced growth and osteogenic differentiation of human osteoblast-like cells on boron-doped nanocrystalline diamond thin films.

    Directory of Open Access Journals (Sweden)

    Lubica Grausova

    Full Text Available Intrinsic nanocrystalline diamond (NCD films have been proven to be promising substrates for the adhesion, growth and osteogenic differentiation of bone-derived cells. To understand the role of various degrees of doping (semiconducting to metallic-like, the NCD films were deposited on silicon substrates by a microwave plasma-enhanced CVD process and their boron doping was achieved by adding trimethylboron to the CH(4:H(2 gas mixture, the B∶C ratio was 133, 1000 and 6700 ppm. The room temperature electrical resistivity of the films decreased from >10 MΩ (undoped films to 55 kΩ, 0.6 kΩ, and 0.3 kΩ (doped films with 133, 1000 and 6700 ppm of B, respectively. The increase in the number of human osteoblast-like MG 63 cells in 7-day-old cultures on NCD films was most apparent on the NCD films doped with 133 and 1000 ppm of B (153,000 ± 14,000 and 152,000 ± 10,000 cells/cm(2, respectively, compared to 113,000 ± 10,000 cells/cm(2 on undoped NCD films. As measured by ELISA per mg of total protein, the cells on NCD with 133 and 1000 ppm of B also contained the highest concentrations of collagen I and alkaline phosphatase, respectively. On the NCD films with 6700 ppm of B, the cells contained the highest concentration of focal adhesion protein vinculin, and the highest amount of collagen I was adsorbed. The concentration of osteocalcin also increased with increasing level of B doping. The cell viability on all tested NCD films was almost 100%. Measurements of the concentration of ICAM-1, i.e. an immunoglobuline adhesion molecule binding inflammatory cells, suggested that the cells on the NCD films did not undergo significant immune activation. Thus, the potential of NCD films for bone tissue regeneration can be further enhanced and tailored by B doping and that B doping up to metallic-like levels is not detrimental for cells.

  3. Study of Electrochemical Degradation of Bromophenol Blue at Boron-doped Diamond Electrode by Using Factorial Design Analysis

    Directory of Open Access Journals (Sweden)

    Rong Fei

    2015-01-01

    Full Text Available As an ideal anode material, Boron-doped diamond (BDD has been widely applied in electro-chemical oxidation of various organic pollutants, for its unique physical and chemical properties. In this paper, the authors studied the degradation of bromophenol blue through the electrochemical anodic oxidation by using the boron-doped BDD as the anode. The effect of statistically important operating parameters on treatment per-formance, such as treatment time, flow rate, applied current and concentration of supporting electrolyte, was evaluated by employing a factorial design analysis in terms of color removal and COD removal amount. As a result, the BDD technology was approved to be highly effective in treating bromophenol blue. Moreover, the results revealed the applicability and potential of factorial design analysis in operating parameters optimization and practical engineering application of BDD technology.

  4. Electrochemical Sensing and Assessment of Parabens in Hydro-Alcoholic Solutions and Water Using a Boron-Doped Diamond Electrode

    OpenAIRE

    Vasile Ostafe; Codruta Cofan; Manuela Mincea; Florica Manea; Dan Cinghită; Ciprian Radovan

    2008-01-01

    In this paper, the electrochemical behaviour of several parabens preservatives, i.e. esters of p-hydroxybenzoic acid, methyl-, ethyl- and propyl-4-hydroxybenzoates as methyl-, ethyl- and propyl-parabens (MB, EB, and PB), has been investigated at a commercial boron-doped diamond electrode (BDDE), especially in the anodic potential range, in both hydro-alcoholic and aqueous media. The cyclic voltammetric and chronoamperometric measurements yielded calibration plots with very good linearity (R2 ...

  5. Cathodic reductive coupling of methyl cinnamate on boron-doped diamond electrodes and synthesis of new neolignan-type products

    Directory of Open Access Journals (Sweden)

    Taiki Kojima

    2015-02-01

    Full Text Available The electroreduction reaction of methyl cinnamate on a boron-doped diamond (BDD electrode was investigated. The hydrodimer, dimethyl 3,4-diphenylhexanedioate (racemate/meso = 74:26, was obtained in 85% yield as the major product, along with small amounts of cyclic methyl 5-oxo-2,3-diphenylcyclopentane-1-carboxylate. Two new neolignan-type products were synthesized from the hydrodimer.

  6. Biofouling resistance of boron-doped diamond neural stimulation electrodes is superior to titanium nitride electrodes in vivo

    DEFF Research Database (Denmark)

    Meijs, Suzan; Alcaide, Maria; Sørensen, Charlotte;

    2016-01-01

    OBJECTIVE: The goal of this study was to assess the electrochemical properties of boron-doped diamond (BDD) electrodes in relation to conventional titanium nitride (TiN) electrodes through in vitro and in vivo measurements. APPROACH: Electrochemical impedance spectroscopy, cyclic voltammetry and ...... electrodes possess a superior biofouling resistance, which provides significantly stable electrochemical properties both in protein solution as well as in vivo compared to TiN electrodes....

  7. Deposition of boron doped DLC films on TiNb and characterization of their mechanical properties and blood compatibility

    Science.gov (United States)

    Liza, Shahira; Hieda, Junko; Akasaka, Hiroki; Ohtake, Naoto; Tsutsumi, Yusuke; Nagai, Akiko; Hanawa, Takao

    2017-01-01

    Abstract Diamond-like carbon (DLC) material is used in blood contacting devices as the surface coating material because of the antithrombogenicity behavior which helps to inhibit platelet adhesion and activation. In this study, DLC films were doped with boron during pulsed plasma chemical vapor deposition (CVD) to improve the blood compatibility. The ratio of boron to carbon (B/C) was varied from 0 to 0.4 in the film by adjusting the flow rate of trimethylboron and acetylene. Tribological tests indicated that boron doping with a low B/C ratio of 0.03 is beneficial for reducing friction (μ = 0.1), lowering hardness and slightly increasing wear rate compared to undoped DLC films. The B/C ratio in the film of 0.03 and 0.4 exhibited highly hydrophilic surface owing to their high wettability and high surface energy. An in vitro platelet adhesion experiment was conducted to compare the blood compatibility of TiNb substrates before and after coating with undoped and boron doped DLC. Films with highly hydrophilic surface enhanced the blood compatibility of TiNb, and the best results were obtained for DLC with the B/C ratio of 0.03. Boron doped DLC films are promising surface coatings for blood contacting devices. PMID:28179961

  8. Resistance to protein adsorption and adhesion of fibroblasts on nanocrystalline diamond films: the role of topography and boron doping.

    Science.gov (United States)

    Alcaide, María; Papaioannou, Stavros; Taylor, Andrew; Fekete, Ladislav; Gurevich, Leonid; Zachar, Vladimir; Pennisi, Cristian Pablo

    2016-05-01

    Boron-doped nanocrystalline diamond (BNCD) films exhibit outstanding electrochemical properties that make them very attractive for the fabrication of electrodes for novel neural interfaces and prosthetics. In these devices, the physicochemical properties of the electrode materials are critical to ensure an efficient long-term performance. The aim of this study was to investigate the relative contribution of topography and doping to the biological performance of BNCD films. For this purpose, undoped and boron-doped NCD films were deposited on low roughness (LR) and high roughness (HR) substrates, which were studied in vitro by means of protein adsorption and fibroblast growth assays. Our results show that BNCD films significantly reduce the adsorption of serum proteins, mostly on the LR substrates. As compared to fibroblasts cultured on LR BNCD films, cells grown on the HR BNCD films showed significantly reduced adhesion and lower growth rates. The mean length of fibronectin fibrils deposited by the cells was significantly increased in the BNCD coated substrates, mainly in the LR surfaces. Overall, the largest influence on protein adsorption, cell adhesion, proliferation, and fibronectin deposition was due to the underlying sub-micron topography, with little or no influence of boron doping. In perspective, BNCD films displaying surface roughness in the submicron range may be used as a strategy to reduce the fibroblast growth on the surface of neural electrodes.

  9. Optical and electrical properties of boron doped diamond thin conductive films deposited on fused silica glass substrates

    Science.gov (United States)

    Ficek, M.; Sobaszek, M.; Gnyba, M.; Ryl, J.; Gołuński, Ł.; Smietana, M.; Jasiński, J.; Caban, P.; Bogdanowicz, R.

    2016-11-01

    This paper presents boron-doped diamond (BDD) film as a conductive coating for optical and electronic purposes. Seeding and growth processes of thin diamond films on fused silica have been investigated. Growth processes of thin diamond films on fused silica were investigated at various boron doping level and methane admixture. Two step pre-treatment procedure of fused silica substrate was applied to achieve high seeding density. First, the substrates undergo the hydrogen plasma treatment then spin-coating seeding using a dispersion consisting of detonation nanodiamond in dimethyl sulfoxide with polyvinyl alcohol was applied. Such an approach results in seeding density of 2 × 1010 cm-2. The scanning electron microscopy images showed homogenous, continuous and polycrystalline surface morphology with minimal grain size of 200 nm for highly boron doped films. The sp3/sp2 ratio was calculated using Raman spectra deconvolution method. A high refractive index (range of 2.0-2.4 @550 nm) was achieved for BDD films deposited at 500 °C. The values of extinction coefficient were below 0.1 at λ = 550 nm, indicating low absorption of the film. The fabricated BDD thin films displayed resistivity below 48 Ohm cm and transmittance over 60% in the visible wavelength range.

  10. Effects of boron doping in TiO2 nanotubes and the performance of dye-sensitized solar cells

    Science.gov (United States)

    Subramanian, Alagesan; Wang, Hong-Wen

    2012-06-01

    Titanium nanotubes doped with boron used as the photoelectrode for dye-sensitized solar cells were investigated. The materials were characterized by SEM, XRD, and UV-vis spectroscopy and their photoconversion efficiencies were evaluated. The chemical compositions of TiO2 nanotubes (TNA) and boron doped TNA (B-TNA) were identified by the energy dispersive X-ray spectroscopy (EDS). XRD evidenced the presence of anatase as the main phase and presented the existence of boron elements at interstitial sites between the TiO2 lattices. The UV-vis spectra indicated the narrowing of band gap upon doping boron into titanium nanotubes. The photovoltaic properties were measured by a current-voltage meter under AM1.5 simulated light radiation. The boron-doped TiO2 nanotube arrays showed an enhanced performance with a photocurrent density of 7.85 ± 0.20 mA/cm2 and an overall conversion efficiency (η) of 3.44 ± 0.10%. The enhanced performance was attributed to the enhanced electron injection rate and retardation of the charge recombination, which could be due to perfect matching between the LUMO of dye molecules and the conduction band of TiO2. Electrochemical impedance spectroscopy (EIS) measurement indicated the longer electron lifetime and reduced TiO2/dye/electrolyte interface resistance for boron doped TiO2 nanotubes than that of undoped TiO2 nanotubes.

  11. Electroanalytical investigation and determination of pefloxacin in pharmaceuticals and serum at boron-doped diamond and glassy carbon electrodes.

    Science.gov (United States)

    Uslu, Bengi; Topal, Burcu Dogan; Ozkan, Sibel A

    2008-02-15

    The anodic behavior and determination of pefloxacin on boron-doped diamond and glassy carbon electrodes were investigated using cyclic, linear sweep, differential pulse and square wave voltammetric techniques. In cyclic voltammetry, pefloxacin shows one main irreversible oxidation peak and additional one irreversible ill-defined wave depending on pH values for both electrodes. The results indicate that the process of pefloxacin is irreversible and diffusion controlled on boron-doped diamond electrode and irreversible but adsorption controlled on glassy carbon electrode. The peak current is found to be linear over the range of concentration 2x10(-6) to 2x10(-4)M in 0.5M H(2)SO(4) at about +1.20V (versus Ag/AgCl) for differential pulse and square wave voltammetric technique using boron-doped diamond electrode. The repeatability, reproducibility, precision and accuracy of the methods in all media were investigated. Selectivity, precision and accuracy of the developed methods were also checked by recovery studies. The procedures were successfully applied to the determination of the drug in pharmaceutical dosage forms and humans serum samples with good recovery results. No electroactive interferences from the excipients and endogenous substances were found in the pharmaceutical dosage forms and biological samples, respectively.

  12. Investigation of optical, structural and morphological properties of nanostructured boron doped TiO2 thin films

    Indian Academy of Sciences (India)

    Savaş Sönmezoǧlu; Banu Erdoǧan; İskender Askeroǧlu

    2013-12-01

    Pure and different ratios (1, 3, 5, 7 and 10%) of boron doped TiO2 thin films were grown on the glass substrate by using sol–gel dip coating method having some benefits such as basic and easy applicability compared to other thin film production methods. To investigate the effect of boron doped on the physical properties of TiO2, structural, morphological and optical properties of growth thin films were examined. 1% boron-doping has no effect on optical properties of TiO2 thin film; however, optical properties vary with > 1%. From X-ray diffraction spectra, it is seen that TiO2 thin films together with doping of boron were formed along with TiB2 hexagonal structure having (111) orientation, B2O3 cubic structure having (310) orientation, TiB0.024O2 tetragonal structure having rutile phase (110) orientation and polycrystalline structures. From SEM images, it is seen that particles together with doping of boron have homogeneously distributed and held onto surface.

  13. High-field EPR spectroscopy of thermal donors in silicon

    DEFF Research Database (Denmark)

    Dirksen, R.; Rasmussen, F.B.; Gregorkiewicz, T.

    1997-01-01

    Thermal donors generated in p-type boron-doped Czochralski-grown silicon by a 450 degrees C heat treatment have been studied by high-field magnetic resonance spectroscopy. In the experiments conducted at a microwave frequency of 140 GHz and in a magnetic field of approximately 5 T four individual...

  14. Synthesis and Doping of Silicon Nanocrystals for Versatile Nanocrystal Inks

    Science.gov (United States)

    Kramer, Nicolaas Johannes

    atmospheric pressures necessitates high plasma densities to reach temperatures required for crystallization of nanoparticles. Using experimentally determined plasma properties from the literature, the model estimates the nanoparticle temperature that is achieved during synthesis at atmospheric pressures. It was found that temperatures well above those required for crystallization can be achieved. Now that the synthesis of nanocrystals is understood, the second half of this thesis will focus on doping of the nanocrystals. The doping of semiconductor nanocrystals, which is vital for the optimization of nanocrystal-based devices, remains a challenge. Gas phase plasma approaches have been very successful in incorporating dopant atoms into nanocrystals by simply adding a dopant precursor during synthesis. However, little is known about the electronic activation of these dopants. This was investigated with field-effect transistor measurements using doped silicon nanocrystal films. It was found that, analogous to bulk silicon, boron and phosphorous electronically dope silicon nanocrystals. However, the dopant activation efficiency remains low as a result of self-purification of the dopants to the nanocrystal surface. Next the plasmonic properties of heavily doped silicon nanocrystals was explored. While the synthesis method was identical, the plasmonic behavior of phosphorus-doped and boron-doped nanocrystals was found the be significantly different. Phosphorus-doped nanocrystals exhibit a plasmon resonance immediately after synthesis, while boron-doped nanocrystals require a post-synthesis annealing or oxidation treatment. This is a result of the difference in dopant location. Phosphorus is more likely to be incorporated into the core of the nanocrystal, while the majority of boron is placed on the surface of the nanocrystal. The oxidized boron-doped particles exhibit stable plasmonic properties, and therefore this allows for the production of air-stable silicon-based plasmonic

  15. Boron-doped diamond semiconductor electrodes: Efficient photoelectrochemical CO2 reduction through surface modification

    Science.gov (United States)

    Roy, Nitish; Hirano, Yuiri; Kuriyama, Haruo; Sudhagar, Pitchaimuthu; Suzuki, Norihiro; Katsumata, Ken-Ichi; Nakata, Kazuya; Kondo, Takeshi; Yuasa, Makoto; Serizawa, Izumi; Takayama, Tomoaki; Kudo, Akihiko; Fujishima, Akira; Terashima, Chiaki

    2016-11-01

    Competitive hydrogen evolution and multiple proton-coupled electron transfer reactions limit photoelectrochemical CO2 reduction in aqueous electrolyte. Here, oxygen-terminated lightly boron-doped diamond (BDDL) thin films were synthesized as a semiconductor electron source to accelerate CO2 reduction. However, BDDL alone could not stabilize the intermediates of CO2 reduction, yielding a negligible amount of reduction products. Silver nanoparticles were then deposited on BDDL because of their selective electrochemical CO2 reduction ability. Excellent selectivity (estimated CO:H2 mass ratio of 318:1) and recyclability (stable for five cycles of 3 h each) for photoelectrochemical CO2 reduction were obtained for the optimum silver nanoparticle-modified BDDL electrode at -1.1 V vs. RHE under 222-nm irradiation. The high efficiency and stability of this catalyst are ascribed to the in situ photoactivation of the BDDL surface during the photoelectrochemical reaction. The present work reveals the potential of BDDL as a high-energy electron source for use with co-catalysts in photochemical conversion.

  16. Photo-assisted electrochemical degradation of polychlorinated biphenyls with boron-doped diamond electrodes.

    Science.gov (United States)

    Gutiérrez-Hernández, Rubén F; Bello-Mendoza, Ricardo; Hernández-Ramírez, Aracely; Malo, Edi A; Nájera-Aguilar, Hugo A

    2017-09-19

    The capacity of the photo electro-Fenton (PEF) process to degrade a mixture of seven polychlorinated biphenyl (PCB) congeners was studied. Boron-doped diamond (BDD) sheets were used as anode and cathode in the experimental electrolytic cell that contained Na2SO4 0.05 M at pH 3 as supporting electrolyte for the electro generation of H2O2 at the cathode. The effects of UV light intensity (254 and 365 nm), current density (8, 16 and 24 mA cm(-2)) and ferrous ion dosage (0.1, 0.2 and 0.3 mM) on PCB (C0 = 50 μg L(-1)) degradation were evaluated. The highest level of PCB degradation (97%) was achieved with 16 mA cm(-2) of current density, 0.1 mM of ferrous ion and UV light at 365 nm as irradiation source after 6 h of reaction. PCB28, PCB52 and PCB101 were not detected after 0.5, 1.5 and 3 h of reaction, respectively. The degradation of PCB138, PCB153, PCB180 and PCB209 was also high (>95%). The PEF system outperformed other oxidation processes (electro-Fenton, anodic oxidation, Fenton, photo-Fenton and UV photolysis) in terms of reaction rate and degradation efficiency. These results demonstrate for the first time the degradation of PCB209, the most highly chlorinated PCB congener, by an advanced electrochemical oxidation process.

  17. Electrochemical treatment of 2,4-dinitrophenol aqueous wastes using boron-doped diamond anodes

    Energy Technology Data Exchange (ETDEWEB)

    Canizares, P. [Department of Chemical Engineering, Facultad de Ciencias Quimicas, Universidad de Castilla-La Mancha, Campus Universitario s/n, 13071 Ciudad Real (Spain); Saez, C. [Department of Chemical Engineering, Facultad de Ciencias Quimicas, Universidad de Castilla-La Mancha, Campus Universitario s/n, 13071 Ciudad Real (Spain); Lobato, J. [Department of Chemical Engineering, Facultad de Ciencias Quimicas, Universidad de Castilla-La Mancha, Campus Universitario s/n, 13071 Ciudad Real (Spain); Rodrigo, M.A. [Department of Chemical Engineering, Facultad de Ciencias Quimicas, Universidad de Castilla-La Mancha, Campus Universitario s/n, 13071 Ciudad Real (Spain)]. E-mail: manuel.rodrigo@uclm.es

    2004-10-15

    The electrochemical oxidation of 2,4-dinitrophenol (2,4-DNP) aqueous wastes has been studied using both, bulk electrolysis and voltammetric techniques. To carry out the bulk electrolysis, a bench-scale plant with a single compartment electrochemical flow cell was used. Boron-doped diamond (BDD) materials were used as the anode and stainless steel (AISI 304) as the cathode. According to the obtained results, a simple mechanistic model has been proposed. The oxidation of 2,4-DNP leads to the appearance of phenol and quinonic compounds and to the release of the nitro groups from the aromatic ring, in a first step. In a second step, these organics are transformed into carboxylic acids (mainly maleic and oxalic acid). The process ends with the formation of carbon dioxide (CO{sub 2}). The effects of the waste characteristics (composition and pH) and of the operation parameters of the process (temperature and current density) have also been studied in this work. The complete removal of the organic compounds contained in the waste has been obtained in all essays.

  18. Synthesis and Antimicrobial Activity of Boron-doped Titania Nano-materials

    Institute of Scientific and Technical Information of China (English)

    王昱征; 薛向欣; 杨合

    2014-01-01

    Antibacterial activity of boron-doped TiO2 (B/TiO2) nano-materials under visible light irradiation and in the dark was investigated. A simple sol-gel method was used to synthesize TiO2 nano-materials. X-ray diffraction pattern of B/TiO2 nano-materials represents the diffraction peaks relating to the crystal planes of TiO2 (anatase and rutile). X-ray photoelectron spectroscopy result shows that part of boron ions incorporates into TiO2 lattice to form a possible chemical environment like Ti-O-B and the rest exist in the form of B2O3. The study on antibacterial effect of B/TiO2 nano-materials on fungal Candida albicans (ATCC10231), Gram-negative Escherichia coli (ATCC25922) and Gram-positive Staphylococcus aureus (ATCC6538) shows that the antibacterial action is more significant on Candida albicans than on Escherichia coli and Staphylococcus aureus. Under visible light irradiation, the antibacterial activity is superior to that in the dark.

  19. Homoepitaxial Boron Doped Diamond Anvil as Heating Element in a Diamond Anvil Cell

    Science.gov (United States)

    Montgomery, Jeffrey; Samudrala, Gopi; Vohra, Yogesh

    2012-02-01

    Recent advances in designer-diamond technology have allowed for the use of electrically and thermally conducting homoepitaxially-grown layers of boron-doped diamond (grown at 1200 C with a 2% mixture of CH4 in H, resulting in extremely high doping levels ˜ 10^20/cm^3) to be used as heating elements in a diamond anvil cell (DAC). These diamonds allow for precise control of the temperature inside of the diamond anvil itself, particularly when coupled with a cryostat. Furthermore, the unmatched thermally conducting nature of diamond ensures that no significant spatial gradient in temperature occurs across the culet area. Since a thermocouple can easily be attached anywhere on the diamond surface, we can also measure diamond temperatures directly. With two such heaters, one can raise sample temperatures uniformly, or with any desired gradient along the pressure axis while preserving optical access. In our initial experiments with these diamond anvils we report on the measurement of the thermal conductivity of copper-beryllium using a single diamond heater and two thermocouples. We augment these measurements with measurements of sample pressure via ruby fluorescence and electrical resistance of the sample and diamond heater.

  20. Homoepitaxial Boron Doped Diamond Anvils as Heating Elements in a Diamond Anvil Cell

    Science.gov (United States)

    Montgomery, Jeffrey; Samudrala, Gopi; Smith, Spencer; Tsoi, Georgiy; Vohra, Yogesh; Weir, Samuel

    2013-03-01

    Recent advances in designer-diamond technology have allowed for the use of electrically and thermally conducting homoepitaxially-grown layers of boron-doped diamond (grown at 1200 °C with a 2% mixture of CH4 in H, resulting in extremely high doping levels ~ 1020/cm3) to be used as heating elements in a diamond anvil cell (DAC). These diamonds allow for precise control of the temperature inside of the diamond anvil itself, particularly when coupled with a cryostat. Furthermore, the unmatched thermally conducting nature of diamond ensures that no significant lateral gradient in temperature occurs across the culet area. Since a thermocouple can easily be attached anywhere on the diamond surface, we can also measure diamond temperatures directly. With two such heaters, one can raise sample temperatures uniformly, or with any desired gradient along the pressure axis while preserving optical access. In our continuing set of benchmark experiments, we use two newly created matching heater anvils with 500 μm culets to analyze the various fluorescence emission lines of ruby microspheres, which show more complicated behavior than traditional ruby chips. We also report on the temperature dependence of the high-pressure Raman modes of paracetamol (C8H9NO2) up to 20 GPa.

  1. Electrochemical treatment of cork boiling wastewater with a boron-doped diamond anode.

    Science.gov (United States)

    Fernandes, Annabel; Santos, Diana; Pacheco, Maria José; Ciríaco, Lurdes; Simões, Rogério; Gomes, Arlindo C; Lopes, Ana

    2015-01-01

    Anodic oxidation at a boron-doped diamond anode of cork boiling wastewater was successfully used for mineralization and biodegradability enhancement required for effluent discharge or subsequent biological treatment, respectively. The influence of the applied current density (30-70 mA/cm2) and the background electrolyte concentration (0-1.5 g/L Na2SO4) on the performance of the electrochemical oxidation was investigated. The supporting electrolyte was required to achieve conductivities that enabled anodic oxidation at the highest current intensities applied. The results indicated that pollutant removal increased with the applied current density, and after 8 h, reductions greater than 90% were achieved for COD, dissolved organic carbon, total phenols and colour. The biodegradability enhancement was from 0.13 to 0.59 and from 0.23 to 0.72 for the BOD/COD ratios with BOD of 5 and 20 days' incubation period, respectively. The tests without added electrolyte were performed at lower applied electrical charges (15 mA/cm2 or 30 V) with good organic load removal (up to 80%). For an applied current density of 30 mA/cm2, there was a minimum of electric conductivity of 1.9 mS/cm (corresponding to 0.75 g/L of Na2SO4), which minimized the specific energy consumption.

  2. Raman Microscopic Analysis of Internal Stress in Boron-Doped Diamond

    Directory of Open Access Journals (Sweden)

    Kevin E. Bennet

    2015-05-01

    Full Text Available Analysis of the induced stress on undoped and boron-doped diamond (BDD thin films by confocal Raman microscopy is performed in this study to investigate its correlation with sample chemical composition and the substrate used during fabrication. Knowledge of this nature is very important to the issue of long-term stability of BDD coated neurosurgical electrodes that will be used in fast-scan cyclic voltammetry, as potential occurrence of film delaminations and dislocations during their surgical implantation can have unwanted consequences for the reliability of BDD-based biosensing electrodes. To achieve a more uniform deposition of the films on cylindrically-shaped tungsten rods, substrate rotation was employed in a custom-built chemical vapor deposition reactor. In addition to visibly preferential boron incorporation into the diamond lattice and columnar growth, the results also reveal a direct correlation between regions of pure diamond and enhanced stress. Definite stress release throughout entire film thicknesses was found in the current Raman mapping images for higher amounts of boron addition. There is also a possible contribution to the high values of compressive stress from sp2 type carbon impurities, besides that of the expected lattice mismatch between film and substrate.

  3. DC current and AC impedance measurements on boron-doped single crystalline diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Ye, Haitao; Gaudin, O.; Jackman, R.B. [Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE (United Kingdom); Muret, P.; Gheeraert, E. [Laboratoire d' Etudes des Proprietes Electroniques des Solides, BP166, 38042 Grenoble Cedex 9 (France)

    2003-09-01

    In this paper, we report the first measurement of impedance on boron-doped single crystalline diamond films from 0.1 Hz to 10 MHz with the temperature ranging from -100 C up to 300 C. The Cole-Cole (Z' via Z{sup ''}) plots are well fitted to a RC parallel circuit model and the equivalent Resistance and Capacitance for the diamond films have been estimated using the Zview curve fitting. The results show only one single semicircle response at each temperature measured. It was found that the resistance decreases from 70 G{omega} at -100 C to 5 k{omega} at 300 C. The linear curve fitting from -100 C to 150 C shows the sample has an activation energy of 0.37 eV, which is consistent with the theoretical value published of this kind of material. The equivalent capacitance is maintained at the level of pF up to 300 C suggesting that no grain boundaries are being involved, as expected from a single crystal diamond. The activation energy from the dc current-temperature curves is 0.36 eV, which is consistent with the value from ac impedance. The potential of this under-used technique for diamond film analysis will be discussed. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Parabens abatement from surface waters by electrochemical advanced oxidation with boron doped diamond anodes.

    Science.gov (United States)

    Domínguez, Joaquín R; Muñoz-Peña, Maria J; González, Teresa; Palo, Patricia; Cuerda-Correa, Eduardo M

    2016-10-01

    The removal efficiency of four commonly-used parabens by electrochemical advanced oxidation with boron-doped diamond anodes in two different aqueous matrices, namely ultrapure water and surface water from the Guadiana River, has been analyzed. Response surface methodology and a factorial, composite, central, orthogonal, and rotatable (FCCOR) statistical design of experiments have been used to optimize the process. The experimental results clearly show that the initial concentration of pollutants is the factor that influences the removal efficiency in a more remarkable manner in both aqueous matrices. As a rule, as the initial concentration of parabens increases, the removal efficiency decreases. The current density also affects the removal efficiency in a statistically significant manner in both aqueous matrices. In the water river aqueous matrix, a noticeable synergistic effect on the removal efficiency has been observed, probably due to the presence of chloride ions that increase the conductivity of the solution and contribute to the generation of strong secondary oxidant species such as chlorine or HClO/ClO (-). The use of a statistical design of experiments made it possible to determine the optimal conditions necessary to achieve total removal of the four parabens in ultrapure and river water aqueous matrices.

  5. Dibenzothiophene adsorption at boron doped carbon nanoribbons studied within density functional theory

    Energy Technology Data Exchange (ETDEWEB)

    López-Albarrán, P. [Facultad de Ingeniería en Tecnología de la Madera, Universidad Michoacana de San Nicolás de Hidalgo, Santiago Tapia 403, CP 58000, Morelia, Michoacán (Mexico); Navarro-Santos, P., E-mail: pnavarrosa@conacyt.mx [Instituto de Investigaciones Químico-Biológicas, Universidad Michoacana de San Nicolás de Hidalgo, Santiago Tapia 403, CP 58000, Morelia, Michoacán (Mexico); Garcia-Ramirez, M. A. [Research Centre for Innovation in Aeronautical Engineering, Universidad Autónoma de Nuevo León, Ciudad Universitaria, San Nicolás de los Garza, CP 66451 Nuevo León (Mexico); Ricardo-Chávez, J. L. [Instituto Potosino de Investigación Científica y Tecnológica, Camino a la Presa San José 2055, Lomas 4" asección, CP 78216, San Luis Potosí, S. L. P. (Mexico)

    2015-06-21

    The adsorption of dibenzothiophene (DBT) on bare and boron-doped armchair carbon nanoribbons (ACNRs) is being investigated in the framework of the density functional theory by implementing periodic boundary conditions that include corrections from dispersion interactions. The reactivity of the ACNRs is characterized by using the Fukui functions as well as the electrostatic potential as local descriptors. Non-covalent adsorption mechanism is found when using the local Perdew-Becke-Ernzerhof functional, regardless of the DBT orientation and adsorption location. The dispersion interactions addition is a milestone to describe the adsorption process. The charge defects introduced in small number (i.e., by doping with B atoms), within the ACNRs increases the selectivity towards sulfur mainly due to the charge depletion at B sites. The DBT magnitude in the adsorption energy shows non-covalent interactions. As a consequence, the configurations where the DBT is adsorbed on a BC{sub 3} island increase the adsorption energy compared to random B arrangements. The stability of these configurations can be explained satisfactorily in terms of dipole interactions. Nevertheless, from the charge-density difference analysis and the weak Bader charge-distribution interactions cannot be ruled out completely. This is why the electronic properties of the ribbons are analyzed in order to elucidate the key role played by the B and DBT states in the adsorbed configurations.

  6. Anodic oxidation of textile dyehouse effluents on boron-doped diamond electrode

    Energy Technology Data Exchange (ETDEWEB)

    Tsantaki, Eleni; Velegraki, Theodora; Katsaounis, Alexandros [Department of Environmental Engineering, Technical University of Crete, Polytechneioupolis, GR-73100 Chania (Greece); Mantzavinos, Dionissios, E-mail: mantzavi@mred.tuc.gr [Department of Environmental Engineering, Technical University of Crete, Polytechneioupolis, GR-73100 Chania (Greece)

    2012-03-15

    The electrochemical oxidation of textile effluents over a boron-doped diamond anode was investigated in the present study. Experiments were conducted with a multi-component synthetic solution containing seventeen dyes and other auxiliary inorganics, as well as an actual effluent from a textile dyeing process. The effect of varying operating parameters, such as current density (4-50 mA/cm{sup 2}), electrolyte concentration (0.1-0.5 M HClO{sub 4}), initial solution pH (1-12.3) and temperature (22-43 Degree-Sign C), on process efficiency was investigated following changes in total organic carbon (TOC), chemical oxygen demand (COD) and color. Complete decolorization accompanied by significant mineralization (up to 85% depending on the conditions) could be achieved after 180 min of treatment. Performance was improved at higher electrolyte concentrations and lower pH values, while the effect of temperature was marginal. Energy consumption per unit mass of COD removed was favored at lower current densities, since energy was unnecessarily wasted to side reactions at higher densities.

  7. Amperometric Determination of Sulfite by Gas Diffusion- Sequential Injection with Boron-Doped Diamond Electrode

    Directory of Open Access Journals (Sweden)

    Orawon Chailapakul

    2008-03-01

    Full Text Available A gas diffusion sequential injection system with amperometric detection using aboron-doped diamond electrode was developed for the determination of sulfite. A gasdiffusion unit (GDU was used to prevent interference from sample matrices for theelectrochemical measurement. The sample was mixed with an acid solution to generategaseous sulfur dioxide prior to its passage through the donor channel of the GDU. Thesulfur dioxide diffused through the PTFE hydrophobic membrane into a carrier solution of 0.1 M phosphate buffer (pH 8/0.1% sodium dodecyl sulfate in the acceptor channel of theGDU and turned to sulfite. Then the sulfite was carried to the electrochemical flow cell anddetected directly by amperometry using the boron-doped diamond electrode at 0.95 V(versus Ag/AgCl. Sodium dodecyl sulfate was added to the carrier solution to preventelectrode fouling. This method was applicable in the concentration range of 0.2-20 mgSO32−/L and a detection limit (S/N = 3 of 0.05 mg SO32−/L was achieved. This method wassuccessfully applied to the determination of sulfite in wines and the analytical resultsagreed well with those obtained by iodimetric titration. The relative standard deviations forthe analysis of sulfite in wines were in the range of 1.0-4.1 %. The sampling frequency was65 h−1.

  8. Boron-doped diamond nano/microelectrodes for bio-sensing and in vitro measurements

    Science.gov (United States)

    Dong, Hua; Wang, Shihua; Galligan, James J.; Swain, Greg M.

    2015-01-01

    Since the fabrication of the first diamond electrode in the mid 1980s, repid progress has been made on the development and application of this new type of electrode material. Boron-doped diamond (BDD) electrodes exhibit outstanding properties compared to oxygen-containing sp2 carbon electrodes. These properties make BDD electrodes an ideal choice for use in complex samples. In recent years, BDD microelectrodes have been applied to in vitro and in vivo measurements of biological molecules in animals, tissues and cells. This review will summarize recent progress in the development and applications of BDD electrodes in bio-sensing and in vitro measurements of biomolecules. In the first section, the methods for BDD nanocrystalline diamond film deposition and BDD microelectrodes preparation are described. This is followed by a description and discussion of several approaches for characterization of the BDD electrode surface structure, morphology, and electrochemical activity. Further, application of BDD microelectrodes for use in the in vitro analysis of norepinephrine (NE), serotonin (5-HT), nitric oxide (NO), histamine, and adenosine from tissues are summarized and finally some of the remaining challenges are discussed. PMID:21196394

  9. Structural modification of boron-doped ZnO layers caused by hydrogen outgassing

    Science.gov (United States)

    Lovics, R.; Csik, A.; Takáts, V.; Hakl, J.; Vad, K.

    2015-07-01

    Results of annealing experiments of boron-doped zinc oxide (ZnO:B) layers prepared by low pressure chemical vapor deposition method on polished Si, soda-lime glass for windows, and AF45 Schott alkali free thin glass substrates are presented. It is shown that short annealing of samples at 150 °C and 300 °C in air causes serious surface degradation of samples prepared on Si and soda-lime glass substrate. The characteristic feature of degradation is the creation of bubbles and craters on the sample surface which fully destroy the continuity of zinc oxide layers. The results of depth distribution mapping of elements indicate that the formation of bubbles is linked to increase in hydrogen concentration in the layer. The surface degradation was not noticed on samples deposited on AF45 Schott alkali free thin glass which has a SiO2 diffusion barrier layer on the surface, only much fewer and smaller bubbles were visible. The results indicate the important role of hydrogen outgassing from the substrate induced by a thermal shock.

  10. Structural modification of boron-doped ZnO layers caused by hydrogen outgassing

    Energy Technology Data Exchange (ETDEWEB)

    Lovics, R.; Csik, A., E-mail: csik@atomki.hu; Takáts, V.; Hakl, J.; Vad, K.

    2015-07-01

    Results of annealing experiments of boron-doped zinc oxide (ZnO:B) layers prepared by low pressure chemical vapor deposition method on polished Si, soda-lime glass for windows, and AF45 Schott alkali free thin glass substrates are presented. It is shown that short annealing of samples at 150 °C and 300 °C in air causes serious surface degradation of samples prepared on Si and soda-lime glass substrate. The characteristic feature of degradation is the creation of bubbles and craters on the sample surface which fully destroy the continuity of zinc oxide layers. The results of depth distribution mapping of elements indicate that the formation of bubbles is linked to increase in hydrogen concentration in the layer. The surface degradation was not noticed on samples deposited on AF45 Schott alkali free thin glass which has a SiO{sub 2} diffusion barrier layer on the surface, only much fewer and smaller bubbles were visible. The results indicate the important role of hydrogen outgassing from the substrate induced by a thermal shock.

  11. Direct electrochemistry of blue copper proteins at boron-doped diamond electrodes

    Energy Technology Data Exchange (ETDEWEB)

    McEvoy, James P. [Department of Chemistry, University of Oxford, Chemistry Research Laboratory, Mansfield Road, Oxford, OX1 3TA (United Kingdom); Foord, John S. [Department of Chemistry, University of Oxford, Chemistry Research Laboratory, Mansfield Road, Oxford, OX1 3TA (United Kingdom)]. E-mail: john.foord@chem.ox.ac.uk

    2005-05-05

    Boron-doped diamond (BDD) is a promising electrode material for use in the spectro-electrochemical study of redox proteins and, in this investigation, cyclic voltammetry was used to obtain quasi-reversible electrochemical responses from two blue copper proteins, parsley plastocyanin and azurin from Pseudomonas aeruginosa. No voltammetry was observed at the virgin electrodes, but signals were observed if the electrodes were anodised, or abraded with alumina, prior to use. Plastocyanin, which has a considerable overall negative charge and a surface acidic patch which is important in forming a productive electron transfer complex with its redox partners, gave a faradaic signal at pre-treated BDD only in the presence of neomycin, a positively charged polyamine. The voltammetry of azurin, which has a small overall charge and no surface acidic patch, was obtained identically in the presence and absence of neomycin. Investigations were also carried out into the voltammetry of two site-directed mutants of azurin, M64E azurin and M44K azurin, each of which introduce a charge into the protein's surface hydrophobic patch. The oxidizing and cleaning effects of the BDD electrode pre-treatments were studied electrochemically using two inorganic probe ions, Fe(China){sub 6} {sup 3-} and Ru(NH{sub 3}){sub 6} {sup 3+}, and by X-ray photoelectron spectroscopy (XPS). All of the electrochemical results are discussed in relation to the electrostatic and hydrophobic contributions to the protein/diamond electrochemical interaction.

  12. Microwave activated electrochemical degradation of 2,4-dichlorophenoxyacetic acid at boron-doped diamond electrode.

    Science.gov (United States)

    Gao, Junxia; Zhao, Guohua; Shi, Wei; Li, Dongming

    2009-04-01

    A method for improving the oxidation ability of the electrode is proposed by using microwave activation in electrochemical oxidation. The electrochemical degradation of 2,4-dichlorophenoxyacetic acid (2,4-D) with microwave radiation (MW-EC) was carried out in a continuous flow system under atmospheric pressure. In 3 h the removal of COD, ACE (average current efficiency) and Cl(-) concentration was 1.63, 2.25 and 1.67 times as that without microwave radiation, respectively. The high degradation ability was resulted from the more active centers at the electrode surface due to the microwave radiation. The decay kinetics of 2,4-D followed a pseudo first-order reaction. The rate constant was increased to 2.16x10(-4) s(-1) with the microwave radiation, while it was 8.52x10(-5) s(-1) with electrochemical treatment only (EC). Under both conditions, the main intermediates were identified and quantified by High Performance Liquid Chromatography (HPLC). The formation rate of intermediate products and further degradation rate were increased by about 50-120% with the microwave radiation. The activation of electrochemical oxidation by microwave was discussed from the diffusion process, adsorption and the temperature at boron-doped diamond (BDD) electrode.

  13. Preparation and characterization of boron-doped titania nano-materials with antibacterial activity

    Science.gov (United States)

    Xue, Xiangxin; Wang, Yuzheng; Yang, He

    2013-01-01

    Boron-doped TiO2 (B/TiO2) nano-materials were synthesized by a sol-gel method and characterized by X-ray diffraction pattern (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectrum (FT-IR) and UV-vis diffuse reflectance spectra (DRS). With the test of bacterial inhibition zone, the antibacterial properties of B/TiO2 nano-materials on Escherichia coli were investigated. The results show that the structure of TiO2 could be transformed from amorphous to anatase and then to rutile by increasing calcination temperature; part of the boron atoms probably have been weaved into the interstitial TiO2 structure or incorporated into the TiO2 lattice through occupying O sites, whereas others exist as B2O3. The results of antibacterial experiment under visible light irradiation show that the B/TiO2 nano-materials exhibit enhanced antibacterial efficiency compared with non-doped TiO2. Ultimately, the action mechanism of B/TiO2 doping is discussed.

  14. Direct and Simultaneous Determination of Phenol, Hydroquinone and Nitrophenol at Boron-Doped Diamond Film Electrode

    Institute of Scientific and Technical Information of China (English)

    ZHAO, Guo-Hua; TANG, Yi-Ting; LIU, Mei-Chuan; LEI, Yan-Zhu; XIAO, Xiao-E

    2007-01-01

    The electrochemical characteristics of multi-component phenolic pollutants, such as phenol (Ph), hydroquinone (HQ) and 4-nitrophenol (4-NP), were investigated on boron-doped diamond (BDD) film electrode by differential pulse voltammetry (DPV) technique. A simple and feasible platform was accordingly established for the direct and simultaneous determination of these three phenolic pollutants. Results showed that, Ph, HQ and 4-NP gave obvious oxidation peaks on BDD electrode at the potential of 1.24, 0.76 and 1.52 V, respectively. Each of them displayed good linear relationship between their oxidation peak currents and their corresponding concentrations in a rather wide range coexisting with one or two of the other phenolic pollutants. The detection limits of Ph, HQ and 4-NP were estimated to be as low as 1.82×10-6, 1.67×10-6 and 1.44×10-6mol·L-1, respectively. Therefore, a promising direct and simultaneous electrochemical determination method of multi-component phenolic pollutants in wastewater samples was constructed successfully on BDD electrode with advantages being rapid, simple, convenient, sensitive, in situ and inexpensive.

  15. Electrochemical properties of boron-doped ordered mesoporous carbon as electrocatalyst and Pt catalyst support.

    Science.gov (United States)

    Nsabimana, Anaclet; Bo, Xiangjie; Zhang, Yufan; Li, Mian; Han, Ce; Guo, Liping

    2014-08-15

    The electrochemical properties of boron-doped ordered mesoporous carbon (BOMC) as an electrode material and Pt catalyst support were investigated. The BOMC was synthesized and its structure was examined by transmission electron microscopy (TEM), scanning electron microscopy, nitrogen adsorption-desorption, X-ray diffraction, Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). More defective sites were introduced into OMC by the doping of boron. Six electroactive compounds were employed to investigate their electrochemical responses on BOMC and OMC modified glassy carbon electrodes. The BOMC, with more defective sites, exhibited high activity toward the electroactive compounds. The property of BOMC of supporting platinum nanoparticle catalyst was examined. Pt nanoparticles were loaded onto BOMC and OMC, and this was confirmed by TEM, XPS and thermogravimetric analysis. Pt nanoparticles with an average diameter of 2.62 nm were deposited on BOMC. The doping of boron into OMC facilitates the dispersion of Pt nanoparticles. Pt nanoparticles supported on BOMC (Pt-BOMC) and Pt nanoparticles supported on OMC (Pt-OMC) were electrochemically characterized. The electrocatalytic activity of Pt-BOMC toward methanol oxidation reaction was compared with that of Pt-OMC and commercial Pt-C catalyst. The results show that the electrocatalytic activity of BOMC is significantly higher than that of other used catalysts. Copyright © 2014 Elsevier Inc. All rights reserved.

  16. Electro-oxidation of diclofenac at boron doped diamond: Kinetics and mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Zhao Xu; Hou Yining; Liu Huijuan; Qiang Zhimin [State Key Laboratory of Environmental Aquatic Chemistry, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing, 100085 (China); Qu Jiuhui [State Key Laboratory of Environmental Aquatic Chemistry, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing, 100085 (China)], E-Mail: jhqu@mail.rcees.ac.cn

    2009-07-01

    Diclofenac is a common anti-inflammatory drug. Its electrochemical degradation at boron doped diamond electrode was investigated in aqueous solution. The degradation kinetics and the intermediate products were studied. Results showed that electro-oxidation was effective in inducing the degradation of diclofenac with 30 mg/L initial concentration, ensuring a mineralization degree of 72% after a 4 h treatment with the applied bias potential of 4.0 V. The effects of applied bias potential and addition of NaCl on diclofenac degradation were investigated. Different degradation mechanisms of diclofenac were involved at various applied bias potentials. With the addition of NaCl, some chlorination intermediates including dichlorodiclofenac were identified, which lead to the total organic carbon increase compared with the electrolysis process without NaCl addition at the reaction initial period. The main intermediates including 2,6-dichlorobenzenamine, 2,5-dihydroxybenzyl alcohol, and benzoic acid are identified at the time of 2 h. 1-(2,6-Dichlorocyclohexa-2,4-dienyl)indolin-2-one were also identified. These intermediates disappeared gradually with the extension of reaction time. Small molecular acids were identified finally. Based on these results, a degradation pathway of diclofenac was proposed.

  17. Continuous and selective measurement of oxytocin and vasopressin using boron-doped diamond electrodes

    Science.gov (United States)

    Asai, Kai; Ivandini, Tribidasari A.; Einaga, Yasuaki

    2016-09-01

    The electrochemical detection of oxytocin using boron-doped diamond (BDD) electrodes was studied. Cyclic voltammetry of oxytocin in a phosphate buffer solution exhibits an oxidation peak at +0.7 V (vs. Ag/AgCl), which is attributable to oxidation of the phenolic group in the tyrosyl moiety. Furthermore, the linearity of the current peaks obtained in flow injection analysis (FIA) using BDD microelectrodes over the oxytocin concentration range from 0.1 to 10.0 μM with a detection limit of 50 nM (S/N = 3) was high (R2 = 0.995). Although the voltammograms of oxytocin and vasopressin observed with an as-deposited BDD electrode, as well as with a cathodically-reduced BDD electrode, were similar, a clear distinction was observed with anodically-oxidized BDD electrodes due to the attractive interaction between vasopressin and the oxidized BDD surface. By means of this distinction, selective measurements using chronoamperometry combined with flow injection analysis at an optimized potential were demonstrated, indicating the possibility of making selective in situ or in vivo measurements of oxytocin.

  18. Electrochemical incineration of dimethyl phthalate by anodic oxidation with boron-doped diamond electrode

    Institute of Scientific and Technical Information of China (English)

    HOU Yining; QU Jiuhui; ZHAO Xu; LIU Huijuan

    2009-01-01

    The anodic oxidation of aqueous solutions containing dimethyl phthalate (DMP) up to 125 mg/L with sodium sulfate (Na2SO4) as supporting electrolyte within the pH range 2.0-10.0 was studied using a one-compartment batch reactor employing a boron-doped diamond (BDD) as anode. Electrolyses were carried out at constant current density (1.5-4.5 mA/cm2). Complete mineralization was always achieved owing to the great concentration of hydroxyl radical (·OH) generated at the BDD surface. The effect of pH, apparent current density and initial DMP concentration on the degradation rate of DMP, the specific charge required for its total mineralization and mineralization current efficiency was investigated systematically. The mineralization rate of DMP was found to be pH-independent and to increase with increasing applied current density. Results indicated that this electrochemical process was subjected, at least partially, to the mass transfer of organics onto the BDD surface. Kinetic analysis of the temporal change of DMP concentration during electrolysis determined by High Performance Liquid Chromatography (HPLC) revealed that DMP decay under all tested conditions followed a pseudo first-order reaction. Aromatic intermediates and generated carboxylic acids were identified by Gas Chromatography-Mass Spectrometry (GC-MS) and a general pathway for the electrochemical incineration of DMP on BDD was proposed.

  19. Granular superconductivity in metallic and insulating nanocrystalline boron-doped diamond thin films

    Energy Technology Data Exchange (ETDEWEB)

    Willems, B L; Zhang, G; Vanacken, J; Moshchalkov, V V [INPAC-Institute for Nanoscale Physics and Chemistry, Katholieke Universiteit Leuven, Celestijnenlaan 200-D, 3000-Leuven (Belgium); Janssens, S D; Haenen, K; Wagner, P, E-mail: bramleo@hotmail.co [Institute for Materials Research (IMO), Hasselt University, BE-3590 Diepenbeek (Belgium)

    2010-09-22

    The low-temperature electrical transport properties of nanocrystalline boron-doped diamond (b-NCD) thin films have been found to be strongly affected by the system's granularity. The important differences between the high and low-temperature behaviour are caused by the inhomogeneous nucleation of superconductivity in the samples. In this paper we will discuss the experimental data obtained on several b-NCD thin films, which were studied by either varying their thickness or boron concentration. It will be shown that the low-temperature properties are influenced by the b-NCD grain boundaries as well as by the appearance of an intrinsic granularity inside these granules. Moreover, superconducting effects have been found to be present even in insulating b-NCD films and are responsible for the negative magnetoresistance regime observed at low temperatures. On the other hand, the low-temperature electrical transport properties of b-NCD films show important similarities with those observed for granular superconductors.

  20. Properties of Boron-dopedμc-Ge:H Films Deposited by Hot-wire CVD

    Institute of Scientific and Technical Information of China (English)

    HUANG Haibin; SHEN Honglie; WU Tianru; LU Linfeng; TANG Zhengxia; SHEN Jiancang

    2015-01-01

    Boron-doped hydrogenated microcrystalline Germanium (μc-Ge:H)fi lms were deposited by hot-wire CVD. H2 diluted GeH4 and B2H6 were used as precursors and the substrate temperature was kept at 300ć. The properties of the samples were analyzed by XRD, Raman spectroscopy, Fourier transform infrared spectrometer and Hall Effect measurement with Van der Pauw method. It is found that thefi lms are partially crystallized, with crystalline fractions larger than 45% and grain sizes smaller than 50 nm. The B-doping can enhance the crystallization but reduce the grain sizes, and also enhance the preferential growth of Ge (220). The conductivity of thefi lms increases and tends to be saturated with increasingdiborane-to-germane ratio . All the Hall mobilities of the samples are larger than 3.8 cm2·V-1·s-1. A high conductivity of 41.3Ω-1ίcm-1 is gained at=6.7%.

  1. Boron-doped few-walled carbon nanotubes: novel synthesis and properties

    Science.gov (United States)

    Preston, Colin; Song, Da; Taillon, Josh; Cumings, John; Hu, Liangbing

    2016-11-01

    Few-walled carbon nanotubes offer a unique marriage of graphitic quality and robustness to ink-processing; however, doping procedures that may alter the band structure of these few-walled nanotubes are still lacking. This report introduces a novel solution-injected chemical vapor deposition growth process to fabricate the first boron-doped few-walled carbon nanotubes (B-FWNTs) reported in literature, which may have extensive applications in battery devices. A comprehensive characterization of the as-grown B-FWNTs confirms successful boron substitution in the graphitic lattice, and reveals varying growth parameters impact the structural properties of B-FWNT yield. An investigation into the optimal growth purification parameters and ink-making procedures was also conducted. This study introduces the first process technique to successfully grow intrinsically p-doped FWNTs, and provides the first investigation into the impact factors of the growth parameters, purification steps, and ink-making processes on the structural properties of the B-FWNTs and the electrical properties of the resulting spray-coated thin-film electrodes.

  2. Continuous and selective measurement of oxytocin and vasopressin using boron-doped diamond electrodes

    Science.gov (United States)

    Asai, Kai; Ivandini, Tribidasari A.; Einaga, Yasuaki

    2016-01-01

    The electrochemical detection of oxytocin using boron-doped diamond (BDD) electrodes was studied. Cyclic voltammetry of oxytocin in a phosphate buffer solution exhibits an oxidation peak at +0.7 V (vs. Ag/AgCl), which is attributable to oxidation of the phenolic group in the tyrosyl moiety. Furthermore, the linearity of the current peaks obtained in flow injection analysis (FIA) using BDD microelectrodes over the oxytocin concentration range from 0.1 to 10.0 μM with a detection limit of 50 nM (S/N = 3) was high (R2 = 0.995). Although the voltammograms of oxytocin and vasopressin observed with an as-deposited BDD electrode, as well as with a cathodically-reduced BDD electrode, were similar, a clear distinction was observed with anodically-oxidized BDD electrodes due to the attractive interaction between vasopressin and the oxidized BDD surface. By means of this distinction, selective measurements using chronoamperometry combined with flow injection analysis at an optimized potential were demonstrated, indicating the possibility of making selective in situ or in vivo measurements of oxytocin. PMID:27599852

  3. Preparation and characterization of vertically columnar boron doped diamond array electrode

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Yang; Yu, Hongtao; Quan, Xie, E-mail: quanxie@dlut.edu.cn; Chen, Shuo; Zhao, Huimin; Zhang, Yaobin

    2014-06-01

    A vertically columnar boron doped diamond (BDD) array electrode was fabricated by microwave plasma chemical vapor deposition. Observed by scanning electron microscopy, the fabricated samples were structured with aligned columns whose diameter and height was 8 μm and 12 μm, respectively, and the minimum interval of neighboring columns was 2 μm. The results of electrochemistry measurement showed that the columnar BDD array electrode possessed high oxygen evolution potential and low background current. Besides that, comparing with flat BDD electrode, the columnar BDD array electrode showed higher electrochemical activity (due to its inner active surface being up to 4.25 cm{sup 2}), lower impedance of electric double layer, and especially enhanced electrical response signal (2.12 μA/μM, 4 times of flat BDD in glucose detection as a sample). These excellent performances may open the door for the BDD materials to be applied in wide areas including electrochemical detection, electrochemistry degradation, electrochemical synthesis, and so on.

  4. Comparison of electrocatalytic characterization of boron-doped diamond and SnO{sub 2} electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Lv, Jiangwei [State Key Laboratory of Urban Water Resources and Environment, Harbin Institute of Technology, Harbin (China); School of Pharmacy, Harbin University of Commerce, Harbin (China); Feng, Yujie, E-mail: yujief@hit.edu.cn [State Key Laboratory of Urban Water Resources and Environment, Harbin Institute of Technology, Harbin (China); Liu, Junfeng [State Key Laboratory of Urban Water Resources and Environment, Harbin Institute of Technology, Harbin (China); Qu, Youpeng [School of Life Science and Technology, Harbin Institute of Technology, Harbin (China); Cui, Fuyi [State Key Laboratory of Urban Water Resources and Environment, Harbin Institute of Technology, Harbin (China)

    2013-10-15

    Boron-doped diamond (BDD) and SnO{sub 2} electrodes were prepared by direct current plasma chemical vapor deposition (DC-PCVD) and sol–gel method, respectively. Electrochemical characterization of the two electrodes were investigated by phenol electrochemical degradation, accelerated service life test, cyclic voltammetry (CV) in phenol solution, polarization curves in H{sub 2}SO{sub 4}. The surface morphology and crystal structure of two electrodes were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analysis. The results showed a considerable difference between the two electrodes in their electrocatalytic activity, electrochemical stability and surface properties. Phenol was readily mineralized to CO{sub 2} at BDD electrode, favoring electrochemical combustion, but its degradation was much slower at SnO{sub 2} electrode. The service life of BDD electrode was 10 times longer than that of SnO{sub 2}. Higher electrocatalytic activity and electrochemical stability of BDD electrode arise from its high oxygen evolution potential and the physically absorbed hydroxyl radicals (·OH) on electrode surface.

  5. Boron-doped diamond synthesized at high-pressure and high-temperature with metal catalyst

    Science.gov (United States)

    Shakhov, Fedor M.; Abyzov, Andrey M.; Kidalov, Sergey V.; Krasilin, Andrei A.; Lähderanta, Erkki; Lebedev, Vasiliy T.; Shamshur, Dmitriy V.; Takai, Kazuyuki

    2017-04-01

    The boron-doped diamond (BDD) powder consisting of 40-100 μm particles was synthesized at 5 GPa and 1500-1600 °C from a mixture of 50 wt% graphite and 50 wt% Ni-Mn catalyst with an addition of 1 wt% or 5 wt% boron powder. The size of crystal domains of doped and non-doped diamond was evaluated as a coherent scattering region by X-ray diffraction (XRD) and using small-angle neutron scattering (SANS), being ≥180 nm (XRD) and 100 nm (SANS). Magnetic impurities of NiMnx originating from the catalyst in the synthesis, which prevent superconductivity, were detected by magnetization measurements at 2-300 K. X-ray photoelectron spectroscopy, the temperature dependence of the resistivity, XRD, and Raman spectroscopy reveal that the concentration of electrically active boron is as high as (2±1)×1020 cm-3 (0.1 at%). To the best of our knowledge, this is the highest boron content for BDD synthesized in high-pressure high-temperature process with metal catalysts.

  6. Mineralization of bisphenol A (BPA) by anodic oxidation with boron-doped diamond (BDD) electrode.

    Science.gov (United States)

    Murugananthan, M; Yoshihara, S; Rakuma, T; Shirakashi, T

    2008-06-15

    Anodic oxidation of bisphenol A (BPA), a representative endocrine disrupting chemical, was carried out using boron-doped diamond (BDD) electrode at galvanostatic mode. The electro-oxidation behavior of BPA at BDD electrode was investigated by means of cyclic voltammetric technique. The extent of degradation and mineralization of BPA were monitored by HPLC and total organic carbon (TOC) value, respectively. The results obtained, indicate that the BPA removal at BDD depends on the applied current density (Iappl), initial concentration of BPA, pH of electrolyte and supporting medium. Galvanostatic electrolysis at BDD anode cause concomitant generation of hydroxyl radical that leads to the BPA destruction. The kinetics for the BPA degradation follows a pseudo-first order reaction with a higher rate constant 12.8x10(-5) s(-1) for higher Iappl value 35.7 mA cm(-2), indicating that the oxidation reaction is limited by Iappl control. Complete mineralization of BPA was achieved regardless of the variables and accordingly the mineralization current efficiency was calculated from the TOC removal measurements. Considering global oxidation process, the effect of supporting electrolytes has been discussed in terms of the electro generated inorganic oxidants. The better performance of BDD anode was proved on a comparative study with Pt and glassy carbon under similar experimental conditions. A possible reaction mechanism for BPA degradation involving three main aromatic intermediates, identified by GC-MS analysis, was proposed.

  7. Electrochemical decolorization of dye wastewater by surface-activated boron-doped nanocrystalline diamond electrode.

    Science.gov (United States)

    Chen, Chienhung; Nurhayati, Ervin; Juang, Yaju; Huang, Chihpin

    2016-07-01

    Complex organics contained in dye wastewater are difficult to degrade and often require electrochemical advanced oxidation processes (EAOPs) to treat it. Surface activation of the electrode used in such treatment is an important factor determining the success of the process. The performance of boron-doped nanocrystalline diamond (BD-NCD) film electrode for decolorization of Acid Yellow (AY-36) azo dye with respect to the surface activation by electrochemical polarization was studied. Anodic polarization found to be more suitable as electrode pretreatment compared to cathodic one. After anodic polarization, the originally H-terminated surface of BD-NCD was changed into O-terminated, making it more hydrophilic. Due to the oxidation of surface functional groups and some portion of sp(2) carbon in the BD-NCD film during anodic polarization, the electrode was successfully being activated showing lower background current, wider potential window and considerably less surface activity compared to the non-polarized one. Consequently, electrooxidation (EO) capability of the anodically-polarized BD-NCD to degrade AY-36 dye was significantly enhanced, capable of nearly total decolorization and chemical oxygen demand (COD) removal even after several times of re-using. The BD-NCD film electrode favored acidic condition for the dye degradation; and the presence of chloride ion in the solution was found to be more advantageous than sulfate active species.

  8. Bioelectrochemical degradation of urea at platinized boron doped diamond electrodes for bioregenerative systems

    Science.gov (United States)

    Nicolau, Eduardo; González-González, Ileana; Flynn, Michael; Griebenow, Kai; Cabrera, Carlos R.

    2009-10-01

    The recovery of potable water from space mission wastewater is critical for the life support and environmental health of crew members in long-term missions. NASA estimates reveal that at manned space missions 1.91 kg/person day of urine is produced, with urea and various salts as its main components. In this research we explore the utilization of urease (EC 3.5.1.5, 15,000 U/g) along with a platinized boron doped diamond electrode (Pt-BDD) to degrade urea. Urea is directly degraded to nitrogen by the in situ utilization of the reaction products as a strategy to increase the amount of clean water in future space expeditions. The biochemical reaction of urease produces ammonia and carbon dioxide from urea. Thereafter, ammonia is electrooxidized at the interface of the Pt-BDD producing molecular nitrogen. The herein presented system has been proven to have 20% urea conversion efficiency. This research has potential applications for future long-term space missions since the reaction byproducts could be used for a biomass subsystem (in situ resource recovery), while generating electricity from the same process.

  9. Simultaneous Chronoamperometric Sensing of Ascorbic Acid and Acetaminophen at a Boron-Doped Diamond Electrode

    Directory of Open Access Journals (Sweden)

    Ciprian Radovan

    2008-06-01

    Full Text Available Cyclic voltammetry (CV and chronoamperometry (CA have been used to sense and determine simultaneously L-ascorbic acid (AA and acetaminophen (AC at a boron-doped diamond electrode (BDDE in a Britton-Robinson buffer solution. The calibration plots of anodic current peak versus concentration obtained from CV and CA data for both investigated compounds in single and di-component solutions over the concentration range 0.01 mM – 0.1 mM proved to be linear, with very good correlation parameters. Sensitivity values and RSD of 2-3% were obtained for various situations, involving both individual and simultaneous presence of AA and AC. The chronoamperometric technique associated with standard addition in sequential one step and/or two successive and continuous chronoamperograms at two characteristic potential levels represented a feasible option for the simultaneous determination of AA and AC in real sample systems such as pharmaceutical formulations. The average values indicated by the supplier were confirmed to a very close approximation from chronoamperomgrams by using several additions with the application of suitable current correction factors.

  10. Electrochemical oxidation of N-nitrosodimethylamine with boron-doped diamond film electrodes.

    Science.gov (United States)

    Chaplin, Brian P; Schrader, Glenn; Farrell, James

    2009-11-01

    This research investigated NDMA oxidation by boron-doped diamond (BDD) film electrodes. Oxidation rates were measured as a function of electrode potential, current density, and temperature using rotating disk and flow-through reactors. Final NDMA reaction products were carbon dioxide, ammonium, and nitrate, with dimethylamine and methylamine as intermediate products. Reaction rates were first-order with respect to NDMA concentration and surface area normalized oxidation rates as high as 850 +/- 50 L/m(2)-hr were observed at a current density of 10 mA/cm(2). The flow-through reactor yielded mass transfer limited reaction rates that were first-order in NDMA concentration, with a half-life of 2.1 +/- 0.1 min. Experimental evidence indicates that NDMA oxidation proceeds via a direct electron transfer at potentials >1.8 V/SHE with a measured apparent activation energy of 3.1 +/- 0.5 kJ/mol at a potential of 2.5 V/SHE. Density functional theory calculations indicate that a direct two-electron transfer can produce a stable NDMA((+2)) species that is stabilized by forming an adduct with water. The transfer of two electrons from NDMA to the electrode allows an activation-less attack of hydroxyl radicals on the NDMA((+2)) water adduct. At higher overpotentials the oxidation of NDMA occurs by a combination of direct electron transfer and hydroxyl radicals produced via water electrolysis.

  11. Comparison of electrocatalytic characterization of boron-doped diamond and SnO2 electrodes

    Science.gov (United States)

    Lv, Jiangwei; Feng, Yujie; Liu, Junfeng; Qu, Youpeng; Cui, Fuyi

    2013-10-01

    Boron-doped diamond (BDD) and SnO2 electrodes were prepared by direct current plasma chemical vapor deposition (DC-PCVD) and sol-gel method, respectively. Electrochemical characterization of the two electrodes were investigated by phenol electrochemical degradation, accelerated service life test, cyclic voltammetry (CV) in phenol solution, polarization curves in H2SO4. The surface morphology and crystal structure of two electrodes were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analysis. The results showed a considerable difference between the two electrodes in their electrocatalytic activity, electrochemical stability and surface properties. Phenol was readily mineralized to CO2 at BDD electrode, favoring electrochemical combustion, but its degradation was much slower at SnO2 electrode. The service life of BDD electrode was 10 times longer than that of SnO2. Higher electrocatalytic activity and electrochemical stability of BDD electrode arise from its high oxygen evolution potential and the physically absorbed hydroxyl radicals (rad OH) on electrode surface.

  12. Boron-doped peroxo-zirconium oxide dielectric for high-performance, low-temperature, solution-processed indium oxide thin-film transistor.

    Science.gov (United States)

    Park, Jee Ho; Yoo, Young Bum; Lee, Keun Ho; Jang, Woo Soon; Oh, Jin Young; Chae, Soo Sang; Lee, Hyun Woo; Han, Sun Woong; Baik, Hong Koo

    2013-08-28

    We developed a solution-processed indium oxide (In2O3) thin-film transistor (TFT) with a boron-doped peroxo-zirconium (ZrO2:B) dielectric on silicon as well as polyimide substrate at 200 °C, using water as the solvent for the In2O3 precursor. The formation of In2O3 and ZrO2:B films were intensively studied by thermogravimetric differential thermal analysis (TG-DTA), attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FT IR), high-resolution X-ray diffraction (HR-XRD), and X-ray photoelectron spectroscopy (XPS). Boron was selected as a dopant to make a denser ZrO2 film. The ZrO2:B film effectively blocked the leakage current at 200 °C with high breakdown strength. To evaluate the ZrO2:B film as a gate dielectric, we fabricated In2O3 TFTs on the ZrO2:B dielectrics with silicon substrates and annealed the resulting samples at 200 and 250 °C. The resulting mobilities were 1.25 and 39.3 cm(2)/(V s), respectively. Finally, we realized a flexible In2O3 TFT with the ZrO2:B dielectric on a polyimide substrate at 200 °C, and it successfully operated a switching device with a mobility of 4.01 cm(2)/(V s). Our results suggest that aqueous solution-processed In2O3 TFTs on ZrO2:B dielectrics could potentially be used for low-cost, low-temperature, and high-performance flexible devices.

  13. Optical and electrical properties of boron doped diamond thin conductive films deposited on fused silica glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ficek, M.; Sobaszek, M.; Gnyba, M. [Department of Metrology and Optoelectronics, Gdansk University of Technology, 11/12G. Narutowicza St., 80-233 Gdansk (Poland); Ryl, J. [Department of Electrochemistry, Corrosion and Material Engineering, Gdansk University of Technology, 11/12 Narutowicza St., 80-233 Gdansk (Poland); Gołuński, Ł. [Department of Metrology and Optoelectronics, Gdansk University of Technology, 11/12G. Narutowicza St., 80-233 Gdansk (Poland); Smietana, M.; Jasiński, J. [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, 75 Koszykowa St., 00-662 Warsaw (Poland); Caban, P. [Institute of Electronic Materials Technology, 133 Wolczynska St., 01-919 Warsaw (Poland); Bogdanowicz, R., E-mail: rbogdan@eti.pg.gda.pl [Department of Metrology and Optoelectronics, Gdansk University of Technology, 11/12G. Narutowicza St., 80-233 Gdansk (Poland); Materials and Process Simulation Center, California Institute of Technology, Pasadena, CA 91125 (United States)

    2016-11-30

    Highlights: • Growth of 60% of transmittance diamond films with resistivity as low as 48 Ω cm. • Two step seeding process of fused silica: plasma hydrogenation and wet seeding. • Nanodiamond seeding density of 2 × 10{sup 10} cm{sup −2} at fused silica substrates. • High refractive index (2.4 @550 nm) was achieved for BDD films deposited at 500 °C. - Abstract: This paper presents boron-doped diamond (BDD) film as a conductive coating for optical and electronic purposes. Seeding and growth processes of thin diamond films on fused silica have been investigated. Growth processes of thin diamond films on fused silica were investigated at various boron doping level and methane admixture. Two step pre-treatment procedure of fused silica substrate was applied to achieve high seeding density. First, the substrates undergo the hydrogen plasma treatment then spin-coating seeding using a dispersion consisting of detonation nanodiamond in dimethyl sulfoxide with polyvinyl alcohol was applied. Such an approach results in seeding density of 2 × 10{sup 10} cm{sup −2}. The scanning electron microscopy images showed homogenous, continuous and polycrystalline surface morphology with minimal grain size of 200 nm for highly boron doped films. The sp{sup 3}/sp{sup 2} ratio was calculated using Raman spectra deconvolution method. A high refractive index (range of 2.0–2.4 @550 nm) was achieved for BDD films deposited at 500 °C. The values of extinction coefficient were below 0.1 at λ = 550 nm, indicating low absorption of the film. The fabricated BDD thin films displayed resistivity below 48 Ohm cm and transmittance over 60% in the visible wavelength range.

  14. Diamond-modified AFM probes: from diamond nanowires to atomic force microscopy-integrated boron-doped diamond electrodes.

    Science.gov (United States)

    Smirnov, Waldemar; Kriele, Armin; Hoffmann, René; Sillero, Eugenio; Hees, Jakob; Williams, Oliver A; Yang, Nianjun; Kranz, Christine; Nebel, Christoph E

    2011-06-15

    In atomic force microscopy (AFM), sharp and wear-resistant tips are a critical issue. Regarding scanning electrochemical microscopy (SECM), electrodes are required to be mechanically and chemically stable. Diamond is the perfect candidate for both AFM probes as well as for electrode materials if doped, due to diamond's unrivaled mechanical, chemical, and electrochemical properties. In this study, standard AFM tips were overgrown with typically 300 nm thick nanocrystalline diamond (NCD) layers and modified to obtain ultra sharp diamond nanowire-based AFM probes and probes that were used for combined AFM-SECM measurements based on integrated boron-doped conductive diamond electrodes. Analysis of the resonance properties of the diamond overgrown AFM cantilevers showed increasing resonance frequencies with increasing diamond coating thicknesses (i.e., from 160 to 260 kHz). The measured data were compared to performed simulations and show excellent correlation. A strong enhancement of the quality factor upon overgrowth was also observed (120 to 710). AFM tips with integrated diamond nanowires are shown to have apex radii as small as 5 nm and where fabricated by selectively etching diamond in a plasma etching process using self-organized metal nanomasks. These scanning tips showed superior imaging performance as compared to standard Si-tips or commercially available diamond-coated tips. The high imaging resolution and low tip wear are demonstrated using tapping and contact mode AFM measurements by imaging ultra hard substrates and DNA. Furthermore, AFM probes were coated with conductive boron-doped and insulating diamond layers to achieve bifunctional AFM-SECM probes. For this, focused ion beam (FIB) technology was used to expose the boron-doped diamond as a recessed electrode near the apex of the scanning tip. Such a modified probe was used to perform proof-of-concept AFM-SECM measurements. The results show that high-quality diamond probes can be fabricated, which are

  15. Enhanced capacitance of composite TiO2 nanotube/boron-doped diamond electrodes studied by impedance spectroscopy.

    Science.gov (United States)

    Siuzdak, K; Bogdanowicz, R; Sawczak, M; Sobaszek, M

    2015-01-14

    We report on novel composite nanostructures based on boron-doped diamond thin films grown on top of TiO2 nanotubes. The nanostructures made of BDD-modified titania nanotubes showed an increase in activity and performance when used as electrodes in electrochemical environments. The BDD thin films (∼200-500 nm) were deposited using microwave plasma assisted chemical vapor deposition (MW PA CVD) onto anodically fabricated TiO2 nanotube arrays. The influence of boron-doping level, methane admixture and growth time on the performance of the Ti/TiO2/BDD electrode was studied in detail. Scanning electron microscopy (SEM) was applied to investigate the surface morphology and grain size distribution. Moreover, the chemical composition of TiO2/BDD electrodes was investigated by means of micro-Raman spectroscopy. The composite electrodes TiO2/BDD are characterized by a significantly higher capacitive current compared to BDD films deposited directly onto a Ti substrate. The novel composite electrode of TiO2 nanotube arrays overgrown by boron-doped diamond (BDD) immersed in 0.1 M NaNO3 can deliver a specific capacitance of 2.10, 4.79, and 7.46 mF cm(-2) at a scan rate of 10 mV s(-1) for a [B]/[C] ratio of 2k, 5k and 10k, respectively. The substantial improvement of electrochemical performance and the excellent rate capability could be attributed to the synergistic effect of TiO2 treatment in CH4 : H2 plasma and the high electrical conductivity of BDD layers. The analysis of electrochemical impedance spectra using an electric equivalent circuit allowed us to determine the surface area on the basis of the value of constant phase element.

  16. Preparation and characterization of boron-doped titania nano-materials with antibacterial activity

    Energy Technology Data Exchange (ETDEWEB)

    Xue Xiangxin [Institute of Metallurgical Resources and Environmental Engineering, Northeastern University, Shenyang 110819 (China); Liaoning Key Laboratory of Metallurgical Resources Recycling Science, Shenyang 110819 (China); Liaoning Engineering and Technology Research Center of Boron Resources Comprehensive Utilization, Shenyang 110819 (China); Liaoning Provincial Universities Key Laboratory of Boron Resources Ecological Utilization Technology and Boron Materials, Shenyang 110819 (China); Wang Yuzheng, E-mail: zheng_wangyu@qq.com [Institute of Metallurgical Resources and Environmental Engineering, Northeastern University, Shenyang 110819 (China); Liaoning Key Laboratory of Metallurgical Resources Recycling Science, Shenyang 110819 (China); Liaoning Engineering and Technology Research Center of Boron Resources Comprehensive Utilization, Shenyang 110819 (China); Liaoning Provincial Universities Key Laboratory of Boron Resources Ecological Utilization Technology and Boron Materials, Shenyang 110819 (China); Yang He [Institute of Metallurgical Resources and Environmental Engineering, Northeastern University, Shenyang 110819 (China); Liaoning Key Laboratory of Metallurgical Resources Recycling Science, Shenyang 110819 (China); Liaoning Engineering and Technology Research Center of Boron Resources Comprehensive Utilization, Shenyang 110819 (China); Liaoning Provincial Universities Key Laboratory of Boron Resources Ecological Utilization Technology and Boron Materials, Shenyang 110819 (China)

    2013-01-01

    Highlights: Black-Right-Pointing-Pointer B/TiO{sub 2} nano-materials are prepared and doping improves particles agglomeration. Black-Right-Pointing-Pointer Absorption spectrum move to visible light after doped. Black-Right-Pointing-Pointer B/TiO{sub 2} nano-materials firstly applied to the fields of antibacterial materials. Black-Right-Pointing-Pointer Calcined at high temperature of 900 Degree-Sign C, B/TiO{sub 2} has still strong antibacterial. - Abstract: Boron-doped TiO{sub 2} (B/TiO{sub 2}) nano-materials were synthesized by a sol-gel method and characterized by X-ray diffraction pattern (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectrum (FT-IR) and UV-vis diffuse reflectance spectra (DRS). With the test of bacterial inhibition zone, the antibacterial properties of B/TiO{sub 2} nano-materials on Escherichia coli were investigated. The results show that the structure of TiO{sub 2} could be transformed from amorphous to anatase and then to rutile by increasing calcination temperature; part of the boron atoms probably have been weaved into the interstitial TiO{sub 2} structure or incorporated into the TiO{sub 2} lattice through occupying O sites, whereas others exist as B{sub 2}O{sub 3}. The results of antibacterial experiment under visible light irradiation show that the B/TiO{sub 2} nano-materials exhibit enhanced antibacterial efficiency compared with non-doped TiO{sub 2}. Ultimately, the action mechanism of B/TiO{sub 2} doping is discussed.

  17. Degradation of atrazine by electrochemical advanced oxidation processes using a boron-doped diamond anode.

    Science.gov (United States)

    Borràs, Núria; Oliver, Ramon; Arias, Conchita; Brillas, Enric

    2010-06-24

    Solutions of 30 mg L(-1) of the herbicide atrazine have been degraded by environmentally friendly electrochemical advanced oxidation processes (EAOPs) such as anodic oxidation (AO), electro-Fenton (EF), and photoelectro-Fenton (PEF) using a small open and cylindrical cell with a boron-doped diamond (BDD) anode. AO has been carried out either with a stainless steel cathode or an O(2) diffusion cathode able to generate H(2)O(2). Hydroxyl radicals ((*)OH) formed at the BDD surface in all EAOPs and in the bulk from Fenton's reaction between added Fe(2+) and electrogenerated H(2)O(2) in EF and PEF are the main oxidants. All treatments yielded almost overall mineralization, although the rate for total organic carbon (TOC) removal is limited by the oxidation of persistent byproducts with (*)OH at the BDD surface. In AO, TOC abatement is enhanced by parallel electrochemical reduction of organics at the stainless steel cathode, while in PEF, it also increases from additional photolysis of intermediates by UVA light under the synergistic action of (*)OH in the bulk. The effect of current and pH on the degradative behavior of EAOPs has been examined to determine their optimum values. Atrazine decay always follows a pseudo-first-order reaction, being more rapidly destroyed from (*)OH in the bulk than at the BDD surface. Aromatic intermediates such as desethylatrazine, desethyldesisopropylatrazine, and cyanuric acid and short linear carboxylic acids such as formic, oxalic, and oxamic have been identified and quantified by reversed-phase and ion-exclusion HPLC, respectively. Released inorganic ions such as Cl(-), NO(3)(-), and NH(4)(+) have been followed by ionic chromatography.

  18. Boundary Magnetization and Exchange Bias of Boron Doped Cr2O3 Pinning Layers

    Science.gov (United States)

    Street, Michael; Echtenkamp, Will; Dowben, Peter; Binek, Christian

    2014-03-01

    This research is part of an effort to utilize voltage-controlled boundary magnetization (BM) in the magnetoelectric (ME) Cr2O3 for spintronic applications. We exploit the electric switchable boundary magnetic moment (MM) of Cr2O3. The net MM at the interface can be useful to manipulate the magnetic states of an adjacent ferromagnetic (FM) material. Using a FM Pd/Co multilayer deposited on Cr2O3, reversible, room-temperature isothermal switching of the exchange bias field has been achieved by reversing the electric field. The voltage-controlled magnetization of the FM layer can be utilized as a state variable. However, to use voltage-controlled BM as a key spintronic material for devices operating at room temperature, the Néel temperature TN of the ME antiferromagnet must be increased above the bulk value of TN = 307 K of pure Cr2O3. First principles calculations show that boron doping of Cr2O3 can increase TN. We diagram structural and magnetic characterizations of pure and B-Cr2O3 grown on Al2O3. An increase in TN of 120 K is achieved making Cr2O3 suitable for room temperature spintronic applications. Further, we attempt to create an exchange bias (EB) system using a FM Pd/Co multilayer on B-doped Cr2O3. From this, we attempt to switch the EB field via the electric field. This project is supported by NSF through MRSEC DMR 0213808, by the NRC/NRI supplement to MRSEC, and by STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA.

  19. Anodic stripping voltammetry of synthesized CdS nanoparticles at boron-doped diamond electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Hayat, Mohammad; Ivandini, Tribidasari A., E-mail: ivandini.tri@sci.ui.ac.id; Saepudin, Endang [Department of Chemistry, FMIPA, Universitas Indonesia, Kampus UI Depok (Indonesia); Einaga, Yasuaki [Department of Chemistry, Keio University (Japan)

    2016-04-19

    Cadmium sulphide (CdS) nanoparticles were chemically synthesized using reverse micelles microreactor methods. By using different washing treatments, UV-Vis spectroscopy showed that the absorption peaks appeared at 465 nm, 462 nm, 460 nm, and 459 nm respectively for CdS nanoparticles without and with 1, 2, and 3 times washing treatments using pure water. In comparison with the absorbance peak of bulk CdS at 512 nm, the shifted absorption peaks, indicates that the different sizes of CdS can be prepared. Anodic stripping voltammetry of the CdS nanoparticles was then studied at a boron-doped diamond electrode using 0.1 M KClO{sub 4} and 0.1 M HClO{sub 4} as the electrolytes. A scan rate of 100 mV/s with a deposition potential of -1000 mV (vs. Ag/AgCl) for 60 s at a potential scan from -1600 mV to +800 mV (vs. Ag/AgCl) was applied as the optimum condition of the measurements. Highly-accurate linear calibration curves (R{sup 2} = 0.99) in 0.1 M HClO{sub 4} with the sensitivity of 0.075 mA/mM and the limit of detection of 81 µM in 0.1 M HClO{sub 4} can be achieved, which is promising for an application of CdS nanoparticles as a label for biosensors.

  20. Decomposition of various endocrine-disrupting chemicals at boron-doped diamond electrode

    Energy Technology Data Exchange (ETDEWEB)

    Yoshihara, S. [Department of Energy and Environmental Science, Graduate School of Engineering, Utsunomiya University, 7-1-2 Yoto, Utsunomiya, Tochigi 321-8585 (Japan)], E-mail: sachioy@cc.utsunomiya-u.ac.jp; Murugananthan, M. [Department of Energy and Environmental Science, Graduate School of Engineering, Utsunomiya University, 7-1-2 Yoto, Utsunomiya, Tochigi 321-8585 (Japan)

    2009-02-28

    Anodic decomposition of endocrine disrupting chemicals (EDCs) namely, 17{beta}-estradiol (E2) and Bisphenol A (BPA) at boron-doped diamond (BDD) has been studied with a working solution volume of 250 ml under galvanostatic mode. Cyclic voltammetric experiments were performed to examine the redox response of E2 and BPA as a function of cycle number. Kinetic analysis suggests that electro-oxidation reaction of EDCs undergo the control of applied current density (I{sub appl}). The mineralization behavior of EDCs was investigated at BDD anode monitoring the total organic carbon (TOC) value at three different I{sub appl}. Electrolysis at high anodic potential causes complex oxidation of EDCs that lead to form the final sole product as CO{sub 2}. From these TOC results, the mineralization current efficiency was evaluated and discussed. In order to examine the effect of electrolyte variables on EDCs, BPA compound was taken and undergone the supporting medium and pH variation experiments. Considering global oxidation process, the effect of supporting medium (Na{sub 2}SO{sub 4}, NaNO{sub 3}, and NaCl) has been discussed in terms of electro-generated inorganic oxidants such as S{sub 2}O{sub 8}{sup 2-}, H{sub 2}O{sub 2} and ClO{sup -}. The better performance of BDD anode was proved on a comparative study with Pt and glassy carbon under similar experimental conditions. A possible reaction mechanism for BPA degradation involving three main aromatic intermediates, identified by GC-MS analysis, was proposed.

  1. Degradation of microcystin-RR using boron-doped diamond electrode

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Chunyong, E-mail: batzcy3000@tom.com [State Key Laboratory of Bioelectronics, Southeast University, Nanjing 210096 (China); School of Science, Nanjing Agricultural University, Nanjing 210095 (China); Suzhou Key Laboratory of Environment and Biosafety, Suzhou Academy of Southeast University, Dushuhu Lake Higher Education Town, Suzhou 215123 (China); Fu Degang, E-mail: fudegang@seu.edu.cn [State Key Laboratory of Bioelectronics, Southeast University, Nanjing 210096 (China); Suzhou Key Laboratory of Environment and Biosafety, Suzhou Academy of Southeast University, Dushuhu Lake Higher Education Town, Suzhou 215123 (China); Gu Zhongze, E-mail: gu@seu.edu.cn [State Key Laboratory of Bioelectronics, Southeast University, Nanjing 210096 (China); Suzhou Key Laboratory of Environment and Biosafety, Suzhou Academy of Southeast University, Dushuhu Lake Higher Education Town, Suzhou 215123 (China)

    2009-12-30

    Microcystins (MCs), produced by blue-green algae, are one of the most common naturally occurring toxins found in natural environment. The presence of MCs in drinking water sources poses a great threat to people's health. In this study, the degradation behavior of microcystin-RR on boron-doped diamond (BDD) electrode was investigated under galvanostatic conditions. Such parameters as reaction time, supporting electrolyte and applied current density were varied in order to determine their effects on this oxidation process. The experimental results revealed the suitability of electrochemical processes employing BDD electrode for removing MC-RR from the solution. However, the efficient removal of MC-RR only occurred in the presence of sodium chloride that acted as redox mediators and the reaction was mainly affected by the chloride concentration (c{sub NaCl}) and applied current density (I{sub appl}). Full and quick removal of 0.50 {mu}g/ml MC-RR in solution was achieved when the operating conditions of c{sub NaCl} and I{sub appl} were 20 mM and 46.3 mA/cm{sup 2}, or 35 mM and 18.2 mA/cm{sup 2} respectively. The kinetics for MC-RR degradation followed a pesudo-first order reaction in most cases, indicating the process was under mass transfer control. As a result of its excellent performance, the BDD technology could be considered as a promising alternative to promote the degradation of MC-RR than chlorination in drinking water supplies.

  2. Boron doped nanostructure ZnO films deposited by ultrasonic spray pyrolysis

    Science.gov (United States)

    Karakaya, Seniye; Ozbas, Omer

    2015-02-01

    ZnO is an II-VI compound semiconductor with a wide direct band gap of 3.3 eV at room temperature. Doped with group III elements (B, Al or Ga), it becomes an attractive candidate to replace tin oxide (SnO2) or indium tin oxide (ITO) as transparent conducting electrodes in solar cell devices and flat panel display due to competitive electrical and optical properties. In this work, ZnO and boron doped ZnO (ZnO:B) films have been deposited onto glass substrates at 350 ± 5 °C by a cost-efficient ultrasonic spray pyrolysis technique. The optical, structural, morphological and electrical properties of nanostructure undoped and ZnO:B films have been investigated. Electrical resistivity of films has been analyzed by four-probe technique. Optical properties and thicknesses of the films have been examined in the wavelength range 1200-1600 nm by using spectroscopic ellipsometry (SE) measurements. The optical constants (refractive index (n) and extinction coefficient (k)) and the thicknesses of the films have been fitted according to Cauchy model. The optical method has been used to determine the band gap value of the films. Transmission spectra have been taken by UV spectrophotometer. It is found that both ZnO and ZnO:B films have high average optical transmission (≥80%). X-ray diffraction (XRD) patterns indicate that the obtained ZnO has a hexagonal wurtzite type structure. The morphological properties of the films were studied by atomic force microscopy (AFM). The surface morphology of the nanostructure films is found to depend on the concentration of B. As a result, ZnO:B films are promising contender for their potential use as transparent window layer and electrodes in solar cells.

  3. Elaboration and characterization of boron doping during SiC growth by VLS mechanism

    Science.gov (United States)

    Soueidan, Maher; Ferro, Gabriel; Nsouli, Bilal; Roumié, Mohamad; Habka, Nada; Souliere, Véronique; Bluet, Jean-Marie; Kazan, Michel

    2011-07-01

    VLS mechanism was used for growing boron doped homoepitaxial SiC layers on 4H-SiC(0 0 0 1) 8° off substrate. Si-based melts were fed by propane in the temperature range 1450-1500 °C. Two main approaches were studied to incorporate boron during growth: (1) adding elemental B in the initial melt, with two different compositions: Si 90B 10 and Si 27Ge 68B 5; the growth was performed at 1500 °C; (2) adding B 2H 6 to the gas phase during growth with a melt composition of Si 25Ge 75; the growth was performed at 1450 °C. In most cases, the growth time was limited by liquid loss. The longest growth duration (1 h) was obtained when adding B 2H 6 to the gas phase. In the case of Si 90B 10 melt, the surface morphology exhibits large and parallel terraces whereas the step front is more undulated when adding Ge. Raman and photoluminescence characterizations performed on these layers confirmed the 4H polytype of the layers in addition to the presence of B, which results in a strong B-N donor-acceptor band. The thickness and the growth rate were determined by micro-Infrared spectroscopy. Particle Induced γ-ray Emission (PIGE) was tentatively used to detect B incorporation inside the grown layers. These results were compared to SIMS measurements from which B concentration was found to vary from 10 18 to 10 19 at cm -3.

  4. Lithium insertion/deinsertion of boron doped graphitic carbons synthesized by different procedure

    Energy Technology Data Exchange (ETDEWEB)

    Frackowiak, E.; Kierzek, K.; Lota, G.; Machnikowski, J. [Poznan Technical University, Poznan (Poland)

    2008-05-15

    The lithium insertion/deinsertion behaviour for a series of pure and boron doped graphites prepared from coal tar derived pitch has been studied. Materials treated with boron were pitch-coke and graphitic carbon produced by heat treatment at 1000 and 2900{sup o}C, respectively. The powdered samples were mixed with 2 wt% of nanocrystalline boron and annealed at 2300{sup o}C for 0.5 h under argon. Additionally, post-treatment of samples in hydrogen at 700 degrees C for 1 h was applied. X-ray diffraction (XRD) analysis was performed. Lithium intercalation/deintercalation was monitored using voltammetry and galvanostatic methods. The results show that boron is a very effective catalyst of pitch-coke graphitization during heat treatment at 2300{sup o} C. When added to graphitic carbon, boron induces a slight improvement of structural ordering which has been established by preceding heat treatment at 2900{sup o}C, but the final effect is inferior to that of heat treatment at 3100{sup o}C without boron. Boron seems to have no positive effect on lithium insertion, whatever the procedure used. For all the graphitized materials lithium insertion/deinsertion occurs within a narrow potential range (0-0.5 V) with reversible capacity X{sub rev} between 0.75 and 0.83 (where X stands for Li insertion degree in the LixC6 compound, X = 1 corresponds to 372 mAh/g). Post-treatment of graphitic materials in hydrogen at 700{sup o}C has a profitable effect on lithium insertion/demsertion, giving the formation of stable passivating layer at first cycle and a decrease of irreversible capacity. Graphite produced by heat treatment at 2900{sup o}C followed by treatment in hydrogen gives the most promising electrochemical characteristics (X{sub rev} = 0.83 and X{sub irr} = 0. 10).

  5. Electrochemical degradation of PNP at boron-doped diamond and platinum electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yanrong, E-mail: yanrong_zhang@mail.hust.edu.cn [Environmental Science Research Institute, Huazhong University of Science and Technology, Wuhan 430074 (China); Yang, Nan [Environmental Science Research Institute, Huazhong University of Science and Technology, Wuhan 430074 (China); Murugananthan, Muthu [Dept of Chemistry and Applied Chemistry, PSG College of Technology, Peelamedu, Coimbatore 641 004 (India); Yoshihara, Sachio [Department of Energy and Environmental Science, Graduate School of Engineering, Utsunomiya University, 7-1-2 Yoto, Utsunomiya, Tochigi 321-8585 (Japan)

    2013-01-15

    Highlights: ► Low concentration of Cl{sup −} could improve the removal of PNP. ► High chlorine concentration inhibited the COD removal. ► BDD electrode was highly effective for the conversion of PNP to organic acids. ► Accumulation of degradation intermediates was happened at Pt electrode. -- Abstract: The electrochemical degradation of p-nitrophenol (PNP) at boron-doped diamond (BDD) and platinum (Pt) anodes was studied by varying the parameters such as Cl{sup −} concentration, pH of aqueous medium and applied current density. The results obtained were explained in terms of in situ concomitant generation of hydroxyl radicals and chloride based oxidant species. The degradation of PNP was highly promoted in low concentration of NaCl electrolyte (less than 0.10 M), on contrary, the mineralization efficiency was poor at both BDD and Pt anodes with the NaCl concentration up to 0.20 M, which was ascribed to the formation of refractory chlorinated organic compounds. A maximum of 100% and 70% of COD removal was achieved in 5 h of electrolysis period using both BDD and Pt anodes under similar experimental conditions. Kinetic study indicated that the degradation of PNP at BDD and Pt anodes followed pseudo-first-order reactions, and the reaction rate constant (k{sub s}) of the former was observed to be higher than that of the latter. Besides COD, conversion of PNP into various intermediate compounds and their degradations were also monitored. The mechanisms for PNP degradation at BDD and Pt anodes were proposed separately by considering the nature of respective intermediate species and their concentrations.

  6. Bioelectrochemical degradation of urea at platinized boron doped diamond electrodes for bioregenerative applications

    Science.gov (United States)

    Nicolau, Eduardo; Gonzalez, Ileana; Nicolau, Eduardo; Cabrera, Carlos R.

    The recovery of potable water from space mission wastewater is critical for the life support and environmental health of crew members in long-term missions. NASA estimates reveal that at manned space missions 0.06 kg/person·day of urine is produced, with urea and various salts as its main components. Current spacecraft water reclamation strategies include the utilization of not only multifiltration systems (MF) and reverse osmosis (RO), but also biological components to deal with crew urine streams. In this research we explore the utilization of urease (EC 3.5.1.5) to convert urea directly to nitrogen by the in-situ utilization of the reaction products, to increase the amount of clean water in future space expeditions. First of all, platinum was electrodeposited on boron doped diamond electrodes by cycling the potential between -0.2 V and 1.0 V in metal/0.5 M H2SO4 solution. SEM images of the electrodes showed a distribution of platinum nanoparticles ranging between 50 nm and 300 nm. The biochemical reaction of urease in nature produces ammonia and carbon dioxide from urea. Based on this, Cyclic Voltammetry experiments of an ammonium acetate solution at pH 10 were performed showing an anodic peak at -0.3 V vs. Ag/AgCl due to the ammonia oxidation. Then, a urease solution (Jack Bean) was poured into the electrochemical cell and subsequent additions of urea were performed with the potential held at -0.3 V in order to promote ammonia oxidation. Chronoamperometry data shows that with more than five urea additions the enzyme still responding by producing ammonia, which is being subsequently oxidized at the electrode surface and producing molecular nitrogen. This research has tremendous applications for future long-term space missions since the reaction byproducts could be used for a biomass subsystem (in-situ resource recovery), while generating electricity from the same process.

  7. The potency of electrical energy production from urine by microbial fuel cell using boron-doped diamond electrode

    Science.gov (United States)

    Rahmawati, I.; Ivandini, T. A.; Saepudin, E.

    2017-04-01

    Microbial fuel cell was developed since it is one of the prospective alternative energy and eco-friendly, using urine as the fuel and Candida fukuyamaensis as a biocatalyst. Boron-doped diamond was used as the electrode. At pH 7, maximum power and current densities of 109.6 mW/m2 and 970 mA/m2 can be obtained, respectively. The results indicated the potency of the system to produce an alternative energy. Furthermore, glucose and creatinine in urine are proposed to be responsible as the carbon sources for the metabolism of C. fukuyamaensis.

  8. Effect of Boron-Doping on the Graphene Aerogel Used as Cathode for the Lithium-Sulfur Battery.

    Science.gov (United States)

    Xie, Yang; Meng, Zhen; Cai, Tingwei; Han, Wei-Qiang

    2015-11-18

    A porous interconnected 3D boron-doped graphene aerogel (BGA) was prepared via a one-pot hydrothermal treatment. The BGA material was first loaded with sulfur to serve as cathode in lithium-sulfur batteries. Boron was positively polarized on the graphene framework, allowing for chemical adsorption of negative polysufide species. Compared with nitrogen-doped and undoped graphene aerogel, the BGA-S cathode could deliver a higher capacity of 994 mA h g(-1) at 0.2 C after 100 cycles, as well as an outstanding rate capability, which indicated the BGA was an ideal cathode material for lithium-sulfur batteries.

  9. Boron-doped diamond film electrode as a sensitive and selective electrochemical sensor for the determination of paracetamol

    OpenAIRE

    Švorc, Ľubomír; Sochr, Jozef; Rievaj, Miroslav; Bustin, Dušan

    2012-01-01

    A simple, sensitive and selective differential pulse voltammetry method for determination of paracetamol on a bare (unmodified) boron-doped diamond film electrode has been developed. It was found by cyclic voltammetry that paracetamol provided the quasireversible wave with oxidation peak on the forward scan about +0.90 V and smaller reduction peak on the reverse scan at +0.68 V vs. Ag/AgCl. The effect of supporting electrolyte, pH and scan rate on voltammetric response of paracetamol was stud...

  10. Feedback-amplified electrochemical dual-plate boron-doped diamond microtrench detector for flow injection analysis

    Science.gov (United States)

    Lewis, Grace E M; Gross, Andrew J; Kasprzyk-Hordern, Barbara; Lubben, Anneke T; Marken, Frank

    2015-01-01

    An electrochemical flow cell with a boron-doped diamond dual-plate microtrench electrode has been developed and demonstrated for hydroquinone flow injection electroanalysis in phosphate buffer pH 7. Using the electrochemical generator-collector feedback detector improves the sensitivity by one order of magnitude (when compared to a single working electrode detector). The diffusion process is switched from an analyte consuming “external” process to an analyte regenerating “internal” process with benefits in selectivity and sensitivity. PMID:25735831

  11. Interstitial Boron-Doped TiO2 Thin Films: The Significant Effect of Boron on TiO2 Coatings Grown by Atmospheric Pressure Chemical Vapor Deposition.

    Science.gov (United States)

    Quesada-González, Miguel; Boscher, Nicolas D; Carmalt, Claire J; Parkin, Ivan P

    2016-09-28

    The work presented here describes the preparation of transparent interstitial boron-doped TiO2 thin-films by atmospheric pressure chemical vapor deposition (APCVD). The interstitial boron-doping, on TiO2, proved by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD), is shown to enhance the crystallinity and significantly improve the photocatalytic activity of the TiO2 films. The synthesis, highly suitable for a reel-to-reel process, has been carried out in one step.

  12. Evaluation of freestanding boron-doped diamond grown by chemical vapour deposition as substrates for vertical power electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Issaoui, R.; Achard, J.; Tallaire, A.; Silva, F.; Gicquel, A. [LSPM-CNRS (formerly LIMHP), Universite Paris 13, 99, Avenue Jean-Baptiste Clement, 93430 Villetaneuse (France); Bisaro, R.; Servet, B.; Garry, G. [Thales Research and Technology France, Campus de Polytechnique, 1 Avenue Augustin Fresnel, F-91767 Palaiseau Cedex (France); Barjon, J. [GEMaC-CNRS, Universite de Versailles Saint Quentin Batiment Fermat, 45 Avenue des Etats-Unis, 78035 Versailles Cedex (France)

    2012-03-19

    In this study, 4 x 4 mm{sup 2} freestanding boron-doped diamond single crystals with thickness up to 260 {mu}m have been fabricated by plasma assisted chemical vapour deposition. The boron concentrations measured by secondary ion mass spectroscopy were 10{sup 18} to 10{sup 20} cm{sup -3} which is in a good agreement with the values calculated from Fourier transform infrared spectroscopy analysis, thus indicating that almost all incorporated boron is electrically active. The dependence of lattice parameters and crystal mosaicity on boron concentrations have also been extracted from high resolution x-ray diffraction experiments on (004) planes. The widths of x-ray rocking curves have globally shown the high quality of the material despite a substantial broadening of the peak, indicating a decrease of structural quality with increasing boron doping levels. Finally, the suitability of these crystals for the development of vertical power electronic devices has been confirmed by four-point probe measurements from which electrical resistivities as low as 0.26 {Omega} cm have been obtained.

  13. Electrochemical Detection of Clenbuterol in Pig Liver at Pyrrole-DNA Modified Boron-doped Diamond Electrode

    Institute of Scientific and Technical Information of China (English)

    WU Jing; LI Xiao-li; WU Xu-mei; HUAN Shuang-yan; SHEN Guo-li; YU Ru-qin

    2005-01-01

    The direct detection of clenbuterol(CL) in pig liver without any extraction separation at a pyrrole-DNA modified boron-doped diamond(BDD) electrode is reported. The pyrrole-DNA modified BDD electrode has a strong electrocatalytic effect on the redox reaction of CL. One oxidization and two reduction peaks of CL appear at 340.2, 299.8 and 166.6 mV(versus SCE), respectively. The pyrrole polymer alone cannot electrocatalyze the above reaction at a BDD electrode; the electrocatalytic effect of a BDD electrode modified with DNA membrane is unsufficient for the analytical detection of CL; the replacement of boron-doped diamond by glass carbon makes the electrocatalytic reaction impossible; the redox process is pH dependent. The influences of various experimental parameters on the pyrrole-DNA modified BDD electrode were investigated. A sensitive cyclic voltammetric response for CL was obtained in a linear range from 3.4×10-6 to 5×10-4 mol/L with a detection limit of 8.5×10-7 mol/L. A mean recovery of 102.7% of CL in the pig liver sample solution and a reproducibility of 3.2% were obtained.

  14. Effect of Boron-Doped Diamond Interlayer on Cutting Performance of Diamond Coated Micro Drills for Graphite Machining

    Directory of Open Access Journals (Sweden)

    Zhiming Zhang

    2013-07-01

    Full Text Available Thin boron doped diamond (BDD film is deposited from trimethyl borate/acetone/hydrogen mixture on Co-cemented tungsten carbide (WC-Co micro drills by using the hot filament chemical vapor deposition (HFCVD technique. The boron peak on Raman spectrum confirms the boron incorporation in diamond film. This film is used as an interlayer for subsequent CVD of micro-crystalline diamond (MCD film. The Rockwell indentation test shows that boron doping could effectively improve the adhesive strength on substrate of as deposited thin diamond films. Dry drilling of graphite is chosen to check the multilayer (BDD + MCD film performance. For the sake of comparison, machining tests are also carried out under identical conditions using BDD and MCD coated micro drills with no interlayer. The wear mechanism of the tools has been identified and correlated with the criterion used to evaluate the tool life. The results show that the multilayer (BDD + MCD coated micro drill exhibits the longest tool life. Therefore, thin BDD interlayer is proved to be a new viable alternative and a suitable option for adherent diamond coatings on micro cutting tools.

  15. Boron doped diamond sensor for sensitive determination of metronidazole: Mechanistic and analytical study by cyclic voltammetry and square wave voltammetry

    Energy Technology Data Exchange (ETDEWEB)

    Ammar, Hafedh Belhadj, E-mail: hbelhadjammar@yahoo.fr; Brahim, Mabrouk Ben; Abdelhédi, Ridha; Samet, Youssef

    2016-02-01

    The performance of boron-doped diamond (BDD) electrode for the detection of metronidazole (MTZ) as the most important drug of the group of 5-nitroimidazole was proven using cyclic voltammetry (CV) and square wave voltammetry (SWV) techniques. A comparison study between BDD, glassy carbon and silver electrodes on the electrochemical response was carried out. The process is pH-dependent. In neutral and alkaline media, one irreversible reduction peak related to the hydroxylamine derivative formation was registered, involving a total of four electrons. In acidic medium, a prepeak appears probably related to the adsorption affinity of hydroxylamine at the electrode surface. The BDD electrode showed higher sensitivity and reproducibility analytical response, compared with the other electrodes. The higher reduction peak current was registered at pH 11. Under optimal conditions, a linear analytical curve was obtained for the MTZ concentration in the range of 0.2–4.2 μmol L{sup −1}, with a detection limit of 0.065 μmol L{sup −1}. - Highlights: • SWV for the determination of MTZ • Boron-doped diamond as a new electrochemical sensor • Simple and rapid detection of MTZ • Efficiency of BDD for sensitive determination of MTZ.

  16. Boron-doped graphene quantum dots for selective glucose sensing based on the "abnormal" aggregation-induced photoluminescence enhancement.

    Science.gov (United States)

    Zhang, Li; Zhang, Zhi-Yi; Liang, Ru-Ping; Li, Ya-Hua; Qiu, Jian-Ding

    2014-05-06

    A hydrothermal approach for the cutting of boron-doped graphene (BG) into boron-doped graphene quantum dots (BGQDs) has been proposed. Various characterizations reveal that the boron atoms have been successfully doped into graphene structures with the atomic percentage of 3.45%. The generation of boronic acid groups on the BGQDs surfaces facilitates their application as a new photoluminescence (PL) probe for label free glucose sensing. It is postulated that the reaction of the two cis-diol units in glucose with the two boronic acid groups on the BGQDs surfaces creates structurally rigid BGQDs-glucose aggregates, restricting the intramolecular rotations and thus resulting in a great boost in the PL intensity. The present unusual "aggregation-induced PL increasing" sensing process excludes any saccharide with only one cis-diol unit, as manifested by the high specificity of BGQDs for glucose over its close isomeric cousins fructose, galactose, and mannose. It is believed that the doping of boron can introduce the GQDs to a new kind of surface state and offer great scientific insights to the PL enhancement mechanism with treatment of glucose.

  17. The electrochemical oxidation of homocysteine at boron-doped diamond electrodes with application to HPLC amperometric detection.

    Science.gov (United States)

    Chailapakul, O; Siangproh, W; Sarada, B V; Terashima, C; Rao, Tata N; Tryk, D A; Fujishima, A

    2002-09-01

    The electrochemical oxidation of homocysteine was studied at as-deposited and anodized (oxidized) boron-doped diamond (BDD) thin film electrodes with cyclic voltammetry, flow injection analysis and high-pressure liquid chromatography with amperometric detection. At anodized boron-doped diamond electrodes, highly reproducible, well-defined cyclic voltammograms for homocysteine oxidation were obtained in acidic media, while as-deposited diamond did not provide a detectable signal. In alkaline media, however, the oxidation response was obtained both at as-deposited and anodized diamond electrodes. The potential sweep rate dependence of homocysteine oxidation (peak currents for 1 mM homocysteine linearly proportional to v(1/2), within the range of 0.01 to 0.3 V s(-1)) indicates that the oxidation involves a diffusing species, with negligible adsorption on the BDD surface at this concentration. In the flow system, BDD exhibited a highly reproducible amperometric response, with a peak variation less than 2%. An extremely low detection limit (1 nM) was obtained at 1.6 V vs. Ag/AgCl. In addition, the determination of homocysteine in a standard mixture with aminothiols and disulfide compounds by means of isocratic reverse-phase HPLC with amperometric detection at diamond electrodes has been investigated. The results showed excellent separation, with a detection limit of 1 pmol and a linear range of three orders of magnitude.

  18. Characterization of Optical and Electrical Properties of Transparent Conductive Boron-Doped Diamond thin Films Grown on Fused Silica

    Directory of Open Access Journals (Sweden)

    Bogdanowicz Robert

    2014-12-01

    Full Text Available Abstract A conductive boron-doped diamond (BDD grown on a fused silica/quartz has been investigated. Diamond thin films were deposited by the microwave plasma enhanced chemical vapor deposition (MW PECVD. The main parameters of the BDD synthesis, i.e. the methane admixture and the substrate temperature were investigated in detail. Preliminary studies of optical properties were performed to qualify an optimal CVD synthesis and film parameters for optical sensing applications. The SEM micro-images showed the homogenous, continuous and polycrystalline surface morphology; the mean grain size was within the range of 100-250 nm. The fabricated conductive boron-doped diamond thin films displayed the resistivity below 500 mOhm cm-1 and the transmittance over 50% in the VIS-NIR wavelength range. The studies of optical constants were performed using the spectroscopic ellipsometry for the wavelength range between 260 and 820 nm. A detailed error analysis of the ellipsometric system and optical modelling estimation has been provided. The refractive index values at the 550 nm wavelength were high and varied between 2.24 and 2.35 depending on the percentage content of methane and the temperature of deposition.

  19. Growth and characterization of ZnO nanorod arrays on boron-doped diamond films by low temperature hydrothermal reaction

    Energy Technology Data Exchange (ETDEWEB)

    Gao Shiyong, E-mail: gaoshiyong@gmail.com [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Li Dongmei; Li Yingai; Lv Xianyi [State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012 (China); Wang Jinzhong; Li Hongtao; Yu Qingjiang; Guo Fengyun; Zhao Liancheng [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)

    2012-10-25

    Highlights: Black-Right-Pointing-Pointer Large-scale ZnO nanorods arrays were grown on boron-doped diamond films. Black-Right-Pointing-Pointer The growth behavior of ZnO nanorods is independent of diamond facets. Black-Right-Pointing-Pointer ZnO nanorods show good optical properties and crystal quality. - Abstract: A facile hydrothermal method has been developed to grow large-scale ZnO nanorods arrays (NRs) on boron-doped diamond (BDD) films at a low temperature of 95 Degree-Sign C. The ZnO nanorods with average diameter of 200 nm are single-crystal hexagonal structure and grow along the [0 0 1] direction. The thin ZnO film plays a key role in driving the nucleation and growth of the ZnO NRs on BDD films. It has been demonstrated that the ZnO nanorods are grown vertically on diamond facets, and this growth behavior is independent of types of diamond facets. The growth mechanism and room temperature photoluminescence (PL) properties of ZnO NRs are investigated.

  20. Morphology and Structure Properties of Boron-doped Diamond Films Prepared by Hot Cathode Direct Current Plasma Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Mengmei PAN

    2016-05-01

    Full Text Available Boron-doped diamond (BDD films were deposited by hot cathode direct current plasma chemical vapor deposition (HCDC-PCVD according to various mixture ratios of CH4/H2/B(OCH33 gas. The Raman performances and surface morphologies of the BDD films were then characterized by Raman spectroscopy and scanning electron microscopy (SEM. Results indicated that the flow rate of B(OCH33 had marked effects on the growth characteristics of the produced boron-doped diamond films. The presence and concentration of the doped boron atoms significantly altered both the surface morphologies and structures of the diamond films. With increasing flow rate of B(OCH33, the crystal grain surfaces became smooth as visible under SEM. The B-doping levels in these films increased from 1.75×1019cm-3 to a maximum of 2.4×1021cm-3, estimated from the Raman spectra. DOI: http://dx.doi.org/10.5755/j01.ms.22.2.12923

  1. Lead detection using micro/nanocrystalline boron-doped diamond by square-wave anodic stripping voltammetry.

    Science.gov (United States)

    Arantes, Tatiane M; Sardinha, André; Baldan, Mauricio R; Cristovan, Fernando H; Ferreira, Neidenei G

    2014-10-01

    Monitoring heavy metal ion levels in water is essential for human health and safety. Electroanalytical techniques have presented important features to detect toxic trace heavy metals in the environment due to their high sensitivity associated with their easy operational procedures. Square-wave voltammetry is a powerful electrochemical technique that may be applied to both electrokinetic and analytical measurements, and the analysis of the characteristic parameters of this technique also enables the mechanism and kinetic evaluation of the electrochemical process under study. In this work, we present a complete optimized study on the heavy metal detection using diamond electrodes. It was analyzed the influence of the morphology characteristics as well as the doping level on micro/nanocrystalline boron-doped diamond films by means of square-wave anodic stripping voltammetry (SWASV) technique. The SWASV parameters were optimized for all films, considering that their kinetic response is dependent on the morphology and/or doping level. The films presented reversible results for the Lead [Pb (II)] system studied. The Pb (II) analysis was performed in ammonium acetate buffer at pH 4.5, varying the lead concentration in the range from 1 to 10 μg L(-1). The analytical responses were obtained for the four electrodes. However, the best low limit detection and reproducibility was found for boron doped nanocrystalline diamond electrodes (BDND) doped with 2000 mg L(-1) in B/C ratio.

  2. Boron-Doped Anatase TiO2 as a High-Performance Anode Material for Sodium-Ion Batteries.

    Science.gov (United States)

    Wang, Baofeng; Zhao, Fei; Du, Guodong; Porter, Spencer; Liu, Yong; Zhang, Peng; Cheng, Zhenxiang; Liu, Hua Kun; Huang, Zhenguo

    2016-06-29

    Pristine and boron-doped anatase TiO2 were prepared via a facile sol-gel method and the hydrothermal method for application as anode materials in sodium-ion batteries (SIBs). The sol-gel method leads to agglomerated TiO2, whereas the hydrothermal method is conducive to the formation of highly crystalline and discrete nanoparticles. The structure, morphology, and electrochemical properties were studied. The crystal size of TiO2 with boron doping is smaller than that of the nondoped crystals, which indicates that the addition of boron can inhibit the crystal growth. The electrochemical measurements demonstrated that the reversible capacity of the B-doped TiO2 is higher than that for the pristine sample. B-doping also effectively enhances the rate performance. The capacity of the B-doped TiO2 could reach 150 mAh/g at the high current rate of 2C and the capacity decay is only about 8 mAh/g over 400 cycles. The remarkable performance could be attributed to the lattice expansion resulting from B doping and the shortened Li(+) diffusion distance due to the nanosize. These results indicate that B-doped TiO2 can be a good candidate for SIBs.

  3. Fabrication of porous boron-doped diamond electrodes by catalytic etching under hydrogen–argon plasma

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Chao [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Li, Cuiping, E-mail: licp226@126.com [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Li, Mingji, E-mail: limingji@163.com [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Li, Hongji [Tianjin Key Laboratory of Organic Solar Cells and Photochemical Conversion, School of Chemistry and Chemical Engineering, Tianjin University of Technology, Tianjin 300384 (China); Dai, Wei [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); School of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072 (China); Wu, Yongheng [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Yang, Baohe [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); School of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072 (China)

    2016-01-01

    Graphical abstract: - Highlights: • Porous BDD was prepared by hydrogen–argon plasma etching with Ni nanoparticles as a catalyst. • With the increase of etching time, the pore size increases and the pore density decreases. • The etching of BDD is independent of the crystal orientation. • The porous BDD electrode exhibited much higher special capacitance than that of pristine BDD. - Abstract: Porous boron-doped diamond (BDD) was prepared by hydrogen–argon plasma etching using electrodeposited Ni nanoparticles as a catalyst. The etching process and formation mechanism of porous BDD were investigated by changing the etching time from 30 s to 300 s. Pores were produced due to the C atoms around Ni nanoparticles are easy to react with hydrogen plasma and form methane. With the increase of etching time, the pore size increased, the pore density decreased, and the pore depth first increased and then maintained unchanged. The sp{sup 2}-bonded graphitic carbons existing on the surface of BDD increase with increasing etching time due to the increase of surface area. No preferential etching was observed due to the high energy of argon plasma. The electrochemical behaviors of the pristine and porous BDD electrodes were characterized by cyclic voltammetry (CV), galvanostatic charge–discharge (GCD) and electrochemical impedance spectroscopy (EIS). The results showed that the porous BDD electrode exhibited high specific capacitance, which is attributed to its high electrical conductivity and large specific surface area. The highest specific capacitance of porous BDD electrode is 9.55 mF cm{sup −2}, which is 22 times higher than that of pristine BDD electrode. The specific capacitance retention of the porous BDD electrode reduced to 98.2% of the initial capacitance after 500 cycles and then increased to 120.0% after 10,000 cycles. For the first 500 cycles, the reduction of capacitance can be attributed to the dissolution of Ni nanoparticles that attached on the

  4. Application of a boron doped diamond (BDD) electrode as an anode for the electrolytic reduction of UO2 in Li2O-LiCl-KCl molten salt

    Science.gov (United States)

    Park, Wooshin; Kim, Jong-Kook; Hur, Jin-Mok; Choi, Eun-Young; Im, Hun Suk; Hong, Sun-Seok

    2013-01-01

    A boron doped diamond thin film electrode was employed as an inert anode to replace a platinum electrode in a conventional electrolytic reduction process for UO2 reduction in Li2O-LiCl molten salt at 650 °C. The molten salt was changed into Li2O-LiCl-KCl to decrease the operation temperature to 550 °C at which the boron doped diamond was chemically stable. The potential for oxygen evolution on the boron doped diamond electrode was determined to be approximately 2.2 V vs. a Li-Pb reference electrode whereas that for Li deposition was around -0.58 V. The density of the anodic current was low compared to that of the cathodic current. Thus the potential of the cathode might not reach the potential for Li deposition if the surface area of the cathode is too wide compared to that of the anode. Therefore, the ratio of the surface areas of the cathode and anode should be precisely controlled. Because the reduction of UO2 is dependent on the reaction with Li, the deposition of Li is a prerequisite in the reduction process. In a consecutive reduction run, it was proved that the boron doped diamond could be employed as an inert anode.

  5. Destination of organic pollutants during electrochemical oxidation of biologically-pretreated dye wastewater using boron-doped diamond anode.

    Science.gov (United States)

    Zhu, Xiuping; Ni, Jinren; Wei, Junjun; Xing, Xuan; Li, Hongna

    2011-05-15

    Electrochemical oxidation of biologically-pretreated dye wastewater was performed in a boron-doped diamond (BDD) anode system. After electrolysis of 12h, the COD was decreased from 532 to 99 mg L(-1) (organic pollutants during electrochemical oxidation process was carefully investigated by molecular weight distribution measurement, resin fractionation, ultraviolet-visible spectroscopy, HPLC and GC-MS analysis, and toxicity test. As results, most organic pollutants were completely removed by electrochemical oxidation and the rest was primarily degraded to simpler compounds (e.g., carboxylic acids and short-chain alkanes) with less toxicity, which demonstrated that electrochemical oxidation of biologically-pretreated dye wastewater with BDD anode was very effective and safe. Especially, the performance of BDD anode system in degradation of large molecular organics such as humic substances makes it very promising in practical applications as an advanced treatment of biologically-pretreated wastewaters. Copyright © 2011 Elsevier B.V. All rights reserved.

  6. Enhanced selectivity of boron doped diamond electrodes for the detection of dopamine and ascorbic acid by increasing the film thickness

    Science.gov (United States)

    Qi, Yao; Long, Hangyu; Ma, Li; Wei, Quiping; Li, Site; Yu, Zhiming; Hu, Jingyuan; Liu, Peizhi; Wang, Yijia; Meng, Lingcong

    2016-12-01

    In this paper, boron doped diamond (BDD) with different thickness were prepared by hot filament chemical vapor deposition. The performance of BDD electrodes for detecting dopamine (DA) and ascorbic acid (AA) were investigated. Scanning electron microscopy and Raman spectra reveal the grain size increases and the film quality improves with the increase of film thickness. Electrochemical test show that the transfer coefficient in [Fe3 (CN) 6]3-/4- redox system increases with the increase of the film thickness. The results of selectivity and sensitivity for DA mixed with AA detection show that 8h-BDD and 12h-BDD electrodes possess well selective separated oxidation peaks of DA and AA, and the 12h-BDD electrode exhibits optimal sensitivity until the DA concentration drops to 1 μ M.

  7. In vivo pH monitoring using boron doped diamond microelectrode and silver needles: application to stomach disorder diagnosis.

    Science.gov (United States)

    Fierro, Stéphane; Seishima, Ryo; Nagano, Osamu; Saya, Hideyuki; Einaga, Yasuaki

    2013-11-19

    This study presents the in vivo electrochemical monitoring of pH using boron doped diamond (BDD) microelectrode and silver needles for potential application in medical diagnosis. Accurate calibration curve for pH determination were obtained through in vitro electrochemical measurements. The increase induced in stomach pH by treatment with pantoprazole was used to demonstrate that it is possible to monitor the pH in vivo using the simple and noninvasive system proposed herein. Using the results of the in vivo and in vitro experiments, a quantitative analysis of the increase in stomach pH is also presented. It is proposed that the catheter-free pH monitoring system presented in this study could be potentially employed in any biological environment.

  8. Science Letters:Development of supported boron-doping TiO2 catalysts by chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    In this study, supported nonmetal (boron) doping TiO2 coating photocatalysts were prepared by chemical vapor deposition (CVD) to enhance the activity under visible light irradiation and avoid the recovering of TiO2. Boron atoms were successfully doped into the lattice of TiO2 through CVD, as evidenced from XPS analysis. B-doped TiO2 coating catalysts showed drastic and strong absorption in the visible light range with a red shift in the band gap transition. This novel B-TiO2 coating photocatalyst showed higher photocatalytic activity in methyl orange degradation under visible light irradiation than that of the pure TiO2 photocatalyst.

  9. Square-Wave Voltammetric Determination of Antihistaminic Drug Hydroxyzine in Pharmaceuticals Using a Boron-doped Diamond Electrode

    Directory of Open Access Journals (Sweden)

    Jessica Scremin

    2016-07-01

    Full Text Available The determination of antihistaminic hydroxyzine using square-wave voltammetry and a cathodically pretreated boron-doped diamond electrode is described. The obtained analytical curve was linear in the hydroxyzine concentration range 0.50 – 20.0 mmol L–1 in 0.1 mol L–1 HCl solution, with a detection limit of 0.43 mmol L–1. Addition and recovery studies in commercial tables and liquid formulations showed excellent recovery values ranging from 94.3 % to 104 %. Furthermore, the proposed method was successfully applied in the determination of hydroxyzine in several pharmaceutical formulations and the results were in a close agreement at a 95 % confidence level with those obtained using an official potentiometric method. DOI: http://dx.doi.org/10.17807/orbital.v8i3.833

  10. TECHNIQUE OF ESTIMATE OF ABSORPTION COEFFICIENT LASER RADIATION IN BORON DOPED DIAMONDS BY INTENSITY OF RAMAN SCATTERING

    Directory of Open Access Journals (Sweden)

    O. N. Poklonskaya

    2013-01-01

    Full Text Available Results of measurements of Raman scattering at the room temperature in air in boron doped synthetic diamonds (five with boron concentrations 2·1017; 6·1017; 2·1018; 1,7·1019; 1·1020 cm–3 and one intentionally undoped are presented. The laser with wavelength 532 nm was used for Raman scattering excitation. Dependences of integral intensity and halfwidth of diamond Raman line with respect to the doping level are presented. In the geometrical optics approximation an expression for doped to undoped integral intensity ratio is obtained. Qualitative estimates of conductivity of the studied samples are conducted. The obtained results can be applied for mapping of near-surface laser radiation absorption coefficient of synthetic single crystal diamonds and for their quality control.

  11. Synthesis and characterization of boron-doped NiO thin films pro-duced by spray pyrolysis

    Institute of Scientific and Technical Information of China (English)

    U Alver; H Yaykasl; S Kerli; A Tanrverdi

    2013-01-01

    Boron-doped NiO thin films were prepared on glass substrates at 400◦C by airbrush spraying method using a solution of nickel nitrate hexahydrate. Their physical properties were investigated as a function of dopant concentration. From X-ray diff raction patterns, it is observed that the films have cubic structure with lattice parameters varying with boron concentration. The morphologies of the films were examined by using scanning electron microscopy, and the grain sizes were measured to be around 30-50 nm. Optical measurements show that the band gap energies of the films first decrease then increase with increasing boron concentration. The resistivities of the films were determined by four point probe method, and the changes in resistivity with boron concentration were investigated.

  12. Synthesis of boron-doped g-C3N4 with enhanced electro-catalytic activity and stability

    Science.gov (United States)

    Zhang, Suyun; Gao, Lina; Fan, Dongliang; Lv, Xiaomeng; Li, Yuan; Yan, Zaoxue

    2017-03-01

    Herein, we rationally designed 3D carbon nitride hierarchical architecture with an interconnected network of graphene-analogue nanosheets and doped with boron through co-condensation strategy. XPS spectra confirmed the incorporation of boron atoms in the polymeric g-C3N4, while X-ray diffraction and IR indicated the characteristic structural properties of pristine g-C3N4 and boron-doped g-C3N4 (Bx-GCN). The Bx-GCN shows promising electrocatalytic activity and stability in the reduction of p-nitrophenol according to cyclic voltammograms analysis. Additionally, the use of this metal-free, organic, semiconducting polymer as an electrocatalyst would open wide application of hybrid carbon nitride materials from both point view of economy and environment.

  13. Preparation of copper oxide modified boron-doped diamond electrodes and its preliminary study for CO2 reduction

    Science.gov (United States)

    Yetri, N. Y.; Ivandini, T. A.; Gunlazuardi, J.

    2017-04-01

    Preparation of boron-doped diamond (BDD) modified with Cu2O (Cu2O-BDD) electrodes was conducted to study the electrochemical reduction of CO2. The electrodes were prepared by electrochemical reduction using a solution containing 1mM Cu(CH3COO)2 and 0.1 M CH3COONa (1:1) at pH 5.7 for 60 s. The electrodeposition of Cu2O at BDD surface was performed by chronoamperometry technique at -0.4 V (vs Ag/AgCl). SEM-EDS and XPS were utilized to characterize the electrodes. At Cu2O-BDD electrodes, cyclic voltammetry of dissolved CO2 in 0.1 M NaCl solution exhibited a reduction peak at around -1.3 V (vs Ag/AgCl), indicated the possibility for application in electrochemical reduction of CO2.

  14. Phenol removal from wastewaters by electrochemical oxidation using boron doped diamond (BDD) and Ti/Ti0.7Ru0.3O2 dsa® electrodes

    National Research Council Canada - National Science Library

    Britto-Costa, P. H; Ruotolo, L. A. M

    2012-01-01

    ...®) and boron-doped diamond (BDD) electrode was studied. The performance of these electrodes for COD removal from aqueous phenol solution was evaluated in the absence and presence of different chloride concentrations...

  15. Long period gratings and rocking filters written with a CO 2 laser in highly-birefringent boron-doped photonic crystal fibers for sensing applications

    Science.gov (United States)

    Carvalho, J. P.; Anuszkiewicz, A.; Statkiewicz-Barabach, G.; Baptista, J. M.; Frazão, O.; Mergo, P.; Santos, J. L.; Urbanczyk, W.

    2012-02-01

    In this work, we demonstrate the possibility of fabricating short-length long-period gratings and rocking filters in highly birefringent Photonic Crystal Fiber using a CO 2 laser. In our experiments both kinds of gratings were made in the same Boron doped highly birefringent PCF using similar exposure parameters. We also present the sensing capabilities of both fabricated gratings to temperature, strain and hydrostatic pressure by interrogation of the wavelength shifts at different resonances.

  16. High-rate and ultralong cycle-life LiFePO4 nanocrystals coated by boron-doped carbon as positive electrode for lithium-ion batteries

    Science.gov (United States)

    Feng, Jinpeng; Wang, Youlan

    2016-12-01

    An evolutionary modification approach, boron-doped carbon coating, has been used to improve the electrochemical performances of positive electrodes for lithium-ion batteries, and demonstrates apparent and significant modification effects. In this study, the boron-doped carbon coating is firstly adopted and used to decorate the performance of LiFePO4. The obtained composite exhibits a unique core-shell structure with an average diameter of 140 nm and a 4 nm thick boron-doped carbon shell that uniformly encapsulates the core. Owing to the boron element which could induce high amount of defects in the carbon, the electronic conductivity of LiFePO4 is greatly ameliorated. Thus, the boron-doped composite shows superior rate capability and cycle stability than the undoped sample. For instance, the reversible specific capacity of LiFePO4@B0.4-C can reach 164.1 mAh g-1 at 0.1C, which is approximately 96.5% of the theoretical capacity (170 mAh g-1). Even at high rate of 10C, it still shows a high specific capacity of 126.8 mAh g-1 and can be maintained at 124.5 mAh g-1 after 100 cycles with capacity retention ratio of about 98.2%. This outstanding Li-storage property enable the present design strategy to open up the possibility of fabricating the LiFePO4@B-C composite for high-performance lithium-ion batteries.

  17. Tailoring of boron-doped MnTe semiconductor-sensitized TiO2 photoelectrodes as near-infrared solar cell devices

    Science.gov (United States)

    Tubtimtae, Auttasit; Hongto, Timakorn; Hongsith, Kritsada; Choopun, Supab

    2014-02-01

    We studied the photovoltaic performance of a new tailoring of boron-doped MnTe semiconductor-sensitized solar cells (B-doped MnTe SSCs). The B-doped MnTe semiconductor was grown on TiO2 using two-stages of the successive ionic layer adsorption and reaction (SILAR) technique as a photoelectrode. The phase of the boron-doped MnTe and MnTe2 semiconductor as sensitizers were characterized with ˜20-50 nm in diameter. The B-doped MnTe(5) exhibited the best efficiency of 0.04%, compared to that of the undoped sample of 0.006%. In addition, the band gaps of 1.30 and 1.26 eV were determined for the undoped and B-doped MnTe NPs, respectively. The change in the band gap after boron doping was performed due to crystal quality improvement and the larger size of the MnTe NPs, leading to a broader absorption of the sensitizer and a noticeable improvement in the photovoltaic performance. This kind of semiconductor and synthesis procedure can be applied for further improvement in a higher efficiency and more stability in SSCs.

  18. Simultaneous voltammetric determination of paracetamol and ascorbic acid using a boron-doped diamond electrode modified with Nafion and lead films.

    Science.gov (United States)

    Tyszczuk-Rotko, Katarzyna; Bęczkowska, Ilona; Wójciak-Kosior, Magdalena; Sowa, Ireneusz

    2014-11-01

    The paper describes the fabrication and application of a novel sensor (a boron-doped diamond electrode modified with Nafion and lead films) for the simultaneous determination of paracetamol and ascorbic acid by differential pulse voltammetry. The main advantage of the lead film and polymer covered boron-doped diamond electrode is that the sensitivity of the stripping responses is increased and the separation of paracetamol and ascorbic acid signals is improved due to the modification of the boron-doped diamond surface by the lead layer. Additionally, the repeatability of paracetamol and ascorbic acid signals is improved by the application of the Nafion film coating. In the presence of oxygen, linear calibration curves were obtained in a wide concentration range from 5×10(-7) to 2×10(-4) mol L(-1) for paracetamol and from 1×10(-6) to 5×10(-4) mol L(-1) for ascorbic acid. The analytical utility of the differential pulse voltammetric method elaborated was tested in the assay of paracetamol and ascorbic acid in commercially available pharmaceutical formulations and the method was validated by high performance liquid chromatography coupled with diode array detector.

  19. MnTe semiconductor-sensitized boron-doped TiO2 and ZnO photoelectrodes for solar cell applications.

    Science.gov (United States)

    Tubtimtae, Auttasit; Arthayakul, Khanittha; Teekwang, Bussayanee; Hongsith, Kritsada; Choopun, Supab

    2013-09-01

    We report a new tailoring MnTe semiconductor-sensitized solar cells (MnTe SSCs) using successive ionic layer adsorption and reaction (SILAR) technique. X-ray diffraction and SAED patterns reveal the orthorhombic MnTe and cubic MnTe2 phases were grown on boron-doped TiO2 and ZnO nanoparticles. The diameter of MnTe NPs ranged from 15 to 30nm on both B-doped metal oxide structures. The energy gaps of metal oxide become narrower after boron doping, which have an advantage for enhancing the light absorption from UV to visible region. Also, the energy gap of MnTe NPs on B-doped metal oxide was determined ~1.27-1.30eV. The best power conversion efficiency (η) of 0.033% and 0.030% yielded from B-doped TiO2/MnTe(7) and B-doped ZnO/MnTe(9), respectively. The reduction in power conversion efficiency by 103% and 91% was due to the absence of boron doping into TiO2 and ZnO nanostructures, respectively.

  20. Preparation of grain size controlled boron-doped diamond thin films and their applications in selective detection of glucose in basic solutions

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Boron-doped diamond (BDD) thin films with different crystal grain sizes were prepared by controlling the reacting gas pressure using hot filament chemical vapor deposition (HFCVD).The morphologies and structures of the prepared diamond thin films were characterized by scanning electron microscopy (SEM) and Raman spectroscopy.The electrochemical responses of K4Fe(CN)6 on different BDD electrodes were investigated.The results suggested that electron transfer was faster at the boron-doped nanocrystalline diamond (BDND) thin film electrodes in comparison with that at other BDD thin film electrodes.The prepared BDD thin film electrodes without any modification were used to directly detect glucose in the basic solution.The results showed that the as-prepared BDD thin film electrodes exhibited good selectivity for detecting glucose in the presence of ascorbic acid (AA) and uric acid (UA).The higher sensitivity was observed on the BDND thin film grown on the boron-doped microcrystalline diamond (BDMD) thin film surface,and the linear response range,sensitivity and the low detection limit were 0.25–10 mM,189.1 μA mmol-1 cm-2 and 25 μM (S/N=3) for glucose in the presence of AA and UA,respectively.

  1. Fabrication and characterization of composite TiO{sub 2} nanotubes/boron-doped diamond electrodes towards enhanced supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Sobaszek, M. [Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications and Informatics, Gdańsk University of Technology, 11/12 G. Narutowicza St., 80-233 Gdańsk (Poland); Siuzdak, K.; Sawczak, M. [Centre for Plasma and Laser Engineering, The Szewalski Institute of Fluid-Flow Machinery, Polish Academy of Sciences, 14 Fiszera St., 80-231 Gdansk (Poland); Ryl, J. [Department of Electrochemistry, Corrosion and Material Engineering, Faculty of Chemistry, Gdańsk University of Technology, 11/12 G. Narutowicza St., 80-233 Gdańsk (Poland); Bogdanowicz, R., E-mail: rbogdan@eti.pg.gda.pl [Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications and Informatics, Gdańsk University of Technology, 11/12 G. Narutowicza St., 80-233 Gdańsk (Poland)

    2016-02-29

    The composite TiO{sub 2} nanotubes/boron-doped diamond electrodes were deposited using Microwave Plasma Enhanced Chemical Vapor Deposition resulting in the improved electrochemical performance. This composite electrode can deliver high specific capacitance of 7.46 mF cm{sup −2} comparing to boron-doped diamond (BDD) deposited onto flat Ti plate (0.11 mF cm{sup −2}).The morphology and composition of composite electrode were characterized by scanning electron microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) techniques. According to XPS and Raman analyses, the structure of TiO{sub 2} was greatly changed during Chemical Vapor Deposition process: formation of Ti{sup 3+} sites, partial anatase to rutile transformation and titanium carbide phase formation. This effect is attributed to the simultaneous presence of activated hydrogen and carbon in the plasma leading to enhanced dehydration of NTs (nanotubes) followed by carbon bonding. The enhanced capacitive effect of TiO{sub 2} NT/BDD could be recognized as: (1) the unique synergistic morphology of NTs and BDD providing more efficient conducting pathway for the diffusion of ions and (2) partial decomposition of NTs and transformation towards to TiC and Ti{sub 2}O{sub 3} fractions. Finally, highly ordered titania nanotubes produced via simply, quick and controllable method — anodization, could act as promising substrate for conductive BDD layer deposition and further application of such composites for supercapacitor construction. - Highlights: • The TiO{sub 2} nanotube (NT)/diamond electrode delivers capacitance of 7.46 mF cm{sup −2}. • The NTs are not affected by diamond growth process and keep their pristine shape. • The BDD overlayer fully encapsulates TiO{sub 2} NTs exhibiting typical columnar growth. • The activated hydrogen and carbon in the plasma lead to enhanced dehydration of NTs. • The presence of TiC and Ti{sub 2}O{sub 3} fractions introducing additional capacitance.

  2. Size-Dependent Electrocatalytic Activity of Gold Nanoparticles on HOPG and Highly Boron-Doped Diamond Surfaces

    Directory of Open Access Journals (Sweden)

    Tine Brülle

    2011-12-01

    Full Text Available Gold nanoparticles were prepared by electrochemical deposition on highly oriented pyrolytic graphite (HOPG and boron-doped, epitaxial 100-oriented diamond layers. Using a potentiostatic double pulse technique, the average particle size was varied in the range from 5 nm to 30 nm in the case of HOPG as a support and between < 1 nm and 15 nm on diamond surfaces, while keeping the particle density constant. The distribution of particle sizes was very narrow, with standard deviations of around 20% on HOPG and around 30% on diamond. The electrocatalytic activity towards hydrogen evolution and oxygen reduction of these carbon supported gold nanoparticles in dependence of the particle sizes was investigated using cyclic voltammetry. For oxygen reduction the current density normalized to the gold surface (specific current density increased for decreasing particle size. In contrast, the specific current density of hydrogen evolution showed no dependence on particle size. For both reactions, no effect of the different carbon supports on electrocatalytic activity was observed.

  3. Electrochemical disinfection using boron-doped diamond electrode--the synergetic effects of in situ ozone and free chlorine generation.

    Science.gov (United States)

    Rajab, Mohamad; Heim, Carolin; Letzel, Thomas; Drewes, Jörg E; Helmreich, Brigitte

    2015-02-01

    This work investigated the capability of using a boron-doped diamond (BDD) electrode for bacterial disinfection in different water matrices containing varying amounts of chloride. The feed water containing Pseudomonas aeruginosa was electrochemically treated while applying different electrode conditions. Depending on the applied current density and the exposure time, inactivation between 4- and 8-log of the targeted microorganisms could be achieved. The disinfection efficiency was driven by the generation of free chlorine as a function of chloride concentration in the water. A synergetic effect of generating both free chlorine and ozone in situ during the disinfection process resulted in an effective bactericidal impact. The formation of the undesired by-products chlorate and perchlorate depended on the water matrix, the applied current density and the desired target disinfection level. In case of synthetic water with a low chloride concentration (20 mg L(-1)) and an applied current density of 167 mA cm(-2), a 6-log inactivation of Pseudomonas aeruginosa could be achieved after 5 min of exposure. The overall energy consumption ranged between 0.3 and 0.6 kW h m(-3) depending on the applied current density and water chemistry. Electrochemical water disinfection represents a suitable and efficient process for producing pathogen-free water without the use of any chemicals. Copyright © 2014 Elsevier Ltd. All rights reserved.

  4. The effect of substrate temperature and growth rate on the doping efficiency of single crystal boron doped diamond

    Energy Technology Data Exchange (ETDEWEB)

    Demlow, SN; Rechenberg, R; Grotjohn, T

    2014-10-01

    The substrate growth temperature dependence of the plasma gas-phase to solid-phase doping efficiency in single crystal, boron doped diamond (BDD) deposition is investigated. Single crystal diamond (SCD) is grown by microwave plasma assisted chemical vapor deposition (MPACVD) on high pressure, high temperature (HPHT) type Ib substrates. Samples are grown at substrate temperatures of 850-950 degrees C for each of five doping concentration levels, to determine the effect of the growth temperature on the doping efficiency and defect morphology. The substrate temperature during growth is shown to have a significant effect on the grown sample defect morphology, and a temperature dependence of the doping efficiency is also shown. The effect of the growth rate on the doping efficiency is discussed, and the ratio of the boron concentration in the gas phase to the flux of carbon incorporated into the solid diamond phase is shown to be a more predictive measure of the resulting boron concentration than the gas phase boron to carbon ratio that is more commonly reported. (C) 2014 Elsevier B.V. All rights reserved.

  5. Synergetic antibacterial activity of reduced graphene oxide and boron doped diamond anode in three dimensional electrochemical oxidation system

    Science.gov (United States)

    Qi, Xiujuan; Wang, Ting; Long, Yujiao; Ni, Jinren

    2015-05-01

    A 100% increment of antibacterial ability has been achieved due to significant synergic effects of boron-doped diamond (BDD) anode and reduced graphene oxide (rGO) coupled in a three dimensional electrochemical oxidation system. The rGO, greatly enhanced by BDD driven electric field, demonstrated strong antibacterial ability and even sustained its excellent performance during a reasonable period after complete power cut in the BDD-rGO system. Cell damage experiments and TEM observation confirmed much stronger membrane stress in the BDD-rGO system, due to the faster bacterial migration and charge transfer by the expanded electro field and current-carrying efficiency by quantum tunnel. Reciprocally the hydroxyl-radical production was eminently promoted with expanded area of electrodes and delayed recombination of the electron-hole pairs in presence of the rGO in the system. This implied a huge potential for practical disinfection with integration of the promising rGO and the advanced electrochemical oxidation systems.

  6. Electrochemical oxidation of tramadol in low-salinity reverse osmosis concentrates using boron-doped diamond anodes.

    Science.gov (United States)

    Lütke Eversloh, Christian; Schulz, Manoj; Wagner, Manfred; Ternes, Thomas A

    2015-04-01

    The electrochemical treatment of low-salinity reverse osmosis (RO) concentrates was investigated using tramadol (100 μM) as a model substance for persistent organic contaminants. Galvanostatic degradation experiments using boron-doped diamond electrodes at different applied currents were conducted in RO concentrates as well as in ultra-pure water containing either sodium chloride or sodium sulfate. Kinetic investigations revealed a significant influence of in-situ generated active chlorine besides direct anodic oxidation. Therefore, tramadol concentrations decreased more rapidly at elevated chloride content. Nevertheless, reduction of total organic carbon (TOC) was found to be comparatively low, demonstrating that transformation rather than mineralization was taking place. Early stage product formation could be attributed to both direct and indirect processes, including demethylation, hydroxylation, dehydration, oxidative aromatic ring cleavage and halogenation reactions. The latter led to various halogenated derivatives and resulted in AOX (adsorbable organic halogens) formation in the lower mg/L-range depending on the treatment conditions. Characterisation of transformation products (TPs) was achieved via MS(n) experiments and additional NMR measurements. Based on identification and quantification of the main TPs in different matrices and on additional potentiostatic electrolysis, a transformation pathway was proposed. Copyright © 2014 Elsevier Ltd. All rights reserved.

  7. Electrochemical Sensing and Assessment of Parabens in Hydro- Alcoholic Solutions and Water Using a Boron-Doped Diamond Electrode

    Directory of Open Access Journals (Sweden)

    Vasile Ostafe

    2008-07-01

    Full Text Available In this paper, the electrochemical behaviour of several parabens preservatives, i.e. esters of p-hydroxybenzoic acid, methyl-, ethyl- and propyl-4-hydroxybenzoates as methyl-, ethyl- and propyl-parabens (MB, EB, and PB, has been investigated at a commercial boron-doped diamond electrode (BDDE, especially in the anodic potential range, in both hydro-alcoholic and aqueous media. The cyclic voltammetric and chronoamperometric measurements yielded calibration plots with very good linearity (R2 between 0.990 and 0.998 and high sensitivity, useful for detection and analytical applications. The determination of the characteristics of individual compounds, of an “overall paraben index”, the assessment of the stability and the saturation solubility in water, and the amperometric sensing and determination in double distilled, tap and river water matrix of the relatively slightly soluble investigated parabens have been carried out using electrochemical alternative. Estimated water solubility was correlated with the octanol-water partition coefficient. Several ideas regarding stability and persistence of the presumptive eco-toxic investigated preservatives in the environment or water systems have been adjacently discussed.

  8. Electrochemical treatment of reverse osmosis concentrate on boron-doped electrodes in undivided and divided cell configurations.

    Science.gov (United States)

    Bagastyo, Arseto Y; Batstone, Damien J; Kristiana, Ina; Escher, Beate I; Joll, Cynthia; Radjenovic, Jelena

    2014-08-30

    An undivided electrolytic cell may offer lower electrochlorination through reduction of chlorine/hypochlorite at the cathode. This study investigated the performance of electrooxidation of reverse osmosis concentrate using boron-doped diamond electrodes in membrane-divided and undivided cells. In both cell configurations, similar extents of chemical oxygen demand and dissolved organic carbon removal were obtained. Continuous formation of chlorinated organic compounds was observed regardless of the membrane presence. However, halogenation of the organic matter did not result in a corresponding increase in toxicity (Vibrio fischeri bioassay performed on extracted samples), with toxicity decreasing slightly until 10AhL(-1), and generally remaining near the initial baseline-toxicity equivalent concentration (TEQ) of the raw concentrate (i.e., ∼2mgL(-1)). The exception was a high range toxicity measure in the undivided cell (i.e., TEQ=11mgL(-1) at 2.4AhL(-1)), which rapidly decreased to 4mgL(-1). The discrepancy between the halogenated organic matter and toxicity patterns may be a consequence of volatile and/or polar halogenated by-products formed in oxidation by OH electrogenerated at the anode. The undivided cell exhibited lower energy compared to the divided cell, 0.25kWhgCOD(-1) and 0.34kWhgCOD(-1), respectively, yet it did not demonstrate any improvement regarding by-products formation.

  9. Toward high-throughput screening of NAD(P)-dependent oxidoreductases using boron-doped diamond microelectrodes and microfluidic devices.

    Science.gov (United States)

    Oyobiki, Ryo; Kato, Taisuke; Katayama, Michinobu; Sugitani, Ai; Watanabe, Takeshi; Einaga, Yasuaki; Matsumoto, Yoshinori; Horisawa, Kenichi; Doi, Nobuhide

    2014-10-07

    Although oxidoreductases are widely used in many applications, such as biosensors and biofuel cells, improvements in the function of existing oxidoreductases or the discovery of novel oxidoreductases with greater activities is desired. To increase the activity of oxidoreductases by directed evolution, a powerful screening technique for oxidoreductases is required. In this study, we demonstrate the utility of boron-doped diamond (BDD) microelectrodes for quantitative and potentially high-throughput measurement of the activity of NAD(P)-dependent oxidoreductases. We first confirmed that BDD microelectrodes can quantify the activity of low concentrations (10-100 pM) of glucose-6-phosphate dehydrogenase and alcohol dehydrogenase with a measuring time of 1 ms per sample. In addition, we found that poisoning of BDD microelectrodes can be repressed by optimizing the pH and by adding l-arginine to the enzyme solution as an antiaggregation agent. Finally, we fabricated a microfluidic device containing a BDD electrode for the first time and observed the elevation of the oxidation current of NADH with increasing flow rate. These results imply that the combination of a BDD microelectrode and microfluidics can be used for high-throughput screening of an oxidoreductase library containing a large number (>10(6)) of samples, each with a small (nanoliter) sample volume.

  10. Oxidation of carbon monoxide, hydrogen peroxide and water at a boron doped diamond electrode: the competition for hydroxyl radicals.

    Science.gov (United States)

    Kisacik, Izzet; Stefanova, Ana; Ernst, Siegfried; Baltruschat, Helmut

    2013-04-07

    Boron doped diamond (BDD) electrodes have an extremely high over-voltage for oxygen evolution from water, which favours its use in oxidation processes of other compounds at high potentials. We used a rotating ring disc (RRDE) assembly and differential electrochemical mass spectrometry (DEMS) in order to monitor the consumption or the production of species in the course of the electrode processes. By intercepting the intermediate of the electrochemical water oxidation with chemical reactions we demonstrate clearly, albeit indirectly, that in the water oxidation process at BDD above 2.5 V the first step is the formation of ˙OH radicals. The electro-oxidation of CO to CO2 at BDD electrodes proceeds only via a first attack by ˙OH radicals followed by a further electron transfer to the electrode. At potentials below the onset of oxygen evolution from water, H2O2 is oxidised by a direct electron transfer to the BDD electrode, while at higher potentials, two different reactions paths compete for the ˙OH radicals formed in the first electron transfer from water: one, where these ˙OH radicals react with each other followed by further electron transfers leading to O2 on the one hand and one, where ˙OH radicals react with other species like H2O2 or CO with subsequent electron transfers on the other hand.

  11. Effects of Calcination Temperature on Preparation of Boron-Doped TiO2 by Sol-Gel Method

    Directory of Open Access Journals (Sweden)

    Wenjie Zhang

    2012-01-01

    Full Text Available Boron-doped TiO2 photocatalyst was prepared by a modified sol-gel method. Being calcinated at temperatures from 300°C to 600°C, all the 3% B-TiO2 samples presented anatase TiO2 phase, and TiO2 crystallite sizes were calculated to be 7.6, 10.3, 13.6, and 27.3 nm, respectively. The samples were composed of irregular particles with rough surfaces in the size range within 3 μm. Ti atoms were in an octahedron skeleton and existed mainly in the form of Ti4+, while the Ti-O-B structure was the main boron existing form in the 3% B-TiO2 sample. When calcination temperature increased from 300°C to 600°C, specific surface area decreased sharply from 205.6 m2/g to 31.8 m2/g. The average pore diameter was 10.53 nm with accumulative pore volume of 0.244 mL/g for the 3% B-TiO2 sample calcinated at 400°C, which performed optimal photocatalytic degradation activity. After 90 min of UV-light irradiation, degradation rate of methyl orange was 96.7% on the optimized photocatalyst.

  12. Simultaneous determination of paracetamol and ibuprofen in pharmaceutical samples by differential pulse voltammetry using a boron-doped diamond electrode

    Energy Technology Data Exchange (ETDEWEB)

    Lima, Amanda B.; Guimaraes, Carlos F.R.C.; Verly, Rodrigo M.; Silva, Leonardo M. da [Universidade Federal dos Vales do Jequitinhonha e Mucuri (UFVJM), Diamantina, MG (Brazil). Departamento de Quimica; Torres, Livia M.F.C.; Carvalho Junior, Alvaro D.; Santos, Wallans T. P. dos, E-mail: wallanst@ufvjm.edu.br [Universidade Federal dos Vales do Jequitinhonha e Mucuri (UFVJM), Diamantina, MG (Brazil). Departamento de Farmacia

    2014-03-15

    This work presents a simple, fast and low-cost methodology for the simultaneous determination of paracetamol (PC) and ibuprofen (IB) in pharmaceutical formulations by differential pulse voltammetry using a boron-doped diamond (BDD) electrode. A well-defined oxidation peak was observed using the BDD electrode for each analyte (0.85 V for PC and 1.72 V for IB (vs. Ag/AgCl)) in 0.1 mol L{sup -1} H{sub 2}SO{sub 4} solution containing 10% (v/v) of ethanol. Calibration curves for the simultaneous determination of PC and IB showed a linear response for both drugs in a concentration range of 20 to 400 μmol L{sup -1} (r{sup 2} = 0.999), with a detection limit of 7.1 μmol L{sup -1} for PC and 3.8 μmol L{sup -1} for IB. The addition-recovery studies in samples were about 100% and the results were validated by chromatographic methods. (author)

  13. [Comparative Study of Benzotriazole Electrochemical Oxidation at Boron-doped Diamond and PbO2 Anodes].

    Science.gov (United States)

    Wu, Juan-li; Zhang, Jia-wei; Wang, Ting; Ni, Jin-ren

    2015-07-01

    Electrochemical systems were built to investigate the degradation of benzotriazole (BTA) on boron-doped diamond (BUU) and PbO2 anodes and give an insight into the mineralization ability of two electrodes in terms of the amount and activity of hydroxyl radicals. Results of bulk electrolysis showed that both BDD and PbO2 displayed perfect BTA degradation performance after 12 hours' electrolysis, with the removal percentages of 99. 48% and 98. 36%, respectively, while the mineralization ability of BDD was much stronger than that of PbO2, with the efficiency of 87. 69% for BDD and 35. 96% for PbO2. Less hydroxyl radical and hydrogen production in BDD system suggested the less amount of active sites on BDD surface, thus further verified that the generated hydroxyl radical amount was not the primary factor determining the mineralization ability of anodes. However, BDD displayed larger binding energy of adsorbed oxygen and thinner adsorption layer than those of PbO2, indicating that the BDD electrode surface was of greater catalytic activity, thus the generated hydroxyl radicals were more free, which was the key to its better mineralization ability.

  14. Simultaneous square-wave voltammetric determination of aspartame and cyclamate using a boron-doped diamond electrode.

    Science.gov (United States)

    Medeiros, Roberta Antigo; de Carvalho, Adriana Evaristo; Rocha-Filho, Romeu C; Fatibello-Filho, Orlando

    2008-07-30

    A simple and highly selective electrochemical method was developed for the simultaneous determination of aspartame and cyclamate in dietary products at a boron-doped diamond (BDD) electrode. In square-wave voltammetric (SWV) measurements, the BDD electrode was able to separate the oxidation peak potentials of aspartame and cyclamate present in binary mixtures by about 400 mV. The detection limit for aspartame in the presence of 3.0x10(-4) mol L(-1) cyclamate was 4.7x10(-7) mol L(-1), and the detection limit for cyclamate in the presence of 1.0x10(-4) mol L(-1) aspartame was 4.2x10(-6) mol L(-1). When simultaneously changing the concentration of both aspartame and cyclamate in a 0.5 mol L(-1) sulfuric acid solution, the corresponding detection limits were 3.5x10(-7) and 4.5x10(-6) mol L(-1), respectively. The relative standard deviation (R.S.D.) obtained was 1.3% for the 1.0x10(-4) mol L(-1) aspartame solution (n=5) and 1.1% for the 3.0x10(-3) mol L(-1) cyclamate solution. The proposed method was successfully applied in the determination of aspartame in several dietary products with results similar to those obtained using an HPLC method at 95% confidence level.

  15. Highly sensitive detection of influenza virus by boron-doped diamond electrode terminated with sialic acid-mimic peptide.

    Science.gov (United States)

    Matsubara, Teruhiko; Ujie, Michiko; Yamamoto, Takashi; Akahori, Miku; Einaga, Yasuaki; Sato, Toshinori

    2016-08-09

    The progression of influenza varies according to age and the presence of an underlying disease; appropriate treatment is therefore required to prevent severe disease. Anti-influenza therapy, such as with neuraminidase inhibitors, is effective, but diagnosis at an early phase of infection before viral propagation is critical. Here, we show that several dozen plaque-forming units (pfu) of influenza virus (IFV) can be detected using a boron-doped diamond (BDD) electrode terminated with a sialic acid-mimic peptide. The peptide was used instead of the sialyloligosaccharide receptor, which is the common receptor of influenza A and B viruses required during the early phase of infection, to capture IFV particles. The peptide, which was previously identified by phage-display technology, was immobilized by click chemistry on the BDD electrode, which has excellent electrochemical characteristics such as low background current and weak adsorption of biomolecules. Electrochemical impedance spectroscopy revealed that H1N1 and H3N2 IFVs were detectable in the range of 20-500 pfu by using the peptide-terminated BDD electrode. Our results demonstrate that the BDD device integrated with the receptor-mimic peptide has high sensitivity for detection of a low number of virus particles in the early phase of infection.

  16. An aptasensor for ochratoxin A based on grafting of polyethylene glycol on a boron-doped diamond microcell.

    Science.gov (United States)

    Chrouda, A; Sbartai, A; Baraket, A; Renaud, L; Maaref, A; Jaffrezic-Renault, N

    2015-11-01

    A novel strategy for the fabrication of an electrochemical label-free aptasensor for small-size molecules is proposed and demonstrated as an aptasensor for ochratoxin A (OTA). A long spacer chain of polyethylene glycol (PEG) was immobilized on a boron-doped diamond (BDD) microcell via electrochemical oxidation of its terminal amino groups. The amino-aptamer was then covalently linked to the carboxyl end of the immobilized PEG as a two-piece macromolecule, autoassembled at the BDD surface, forming a dense layer. Due to a change in conformation of the aptamer on the target analyte binding, a decrease of the electron transfer rate of the redox [Fe(CN)6](4-/3-) probe was observed. To quantify the amount of OTA, the decrease of the square wave voltammetry (SWV) peak maximum of this probe was monitored. The plot of the peak maximum against the logarithm of OTA concentration was linear along the range from 0.01 to 13.2 ng/L, with a detection limit of 0.01 ng/L. This concept was validated on spiked real samples of rice.

  17. Boron-Doped Graphene As Active Electrocatalyst For Oxygen Reduction Reaction At A Fuel-Cell Cathode

    CERN Document Server

    Fazio, Gianluca; Di Valentin, Cristiana

    2016-01-01

    Boron-doped graphene was reported to be the best non-metal doped graphene electrocatalyst for the oxygen reduction reaction (ORR) working at an onset potential of 0.035 V [JACS 136 (2014) 4394]. In the present DFT study, intermediates and transition structures along the possible reaction pathways are determined. Both Langmuir-Hinschelwood and Eley-Rideal mechanisms are discussed. Molecular oxygen binds the positively charged B atom and forms an open shell end-on dioxygen intermediate. The associative path is favoured with respect to the dissociative one. The free energy diagrams along the four-reduction steps are investigated with the methodology by N{\\o}rskov and co. [JPC B 108 (2004) 17886] in both acidic and alkaline conditions. The pH effect on the stability of the intermediates of reduction is analyzed in terms of the Pourbaix diagram. At pH = 14 we compute an onset potential value for the electrochemical ORR of U = 0.05 V, which compares very well with the experimental value in alkaline conditions.

  18. Anodic oxidation of ketoprofen-An anti-inflammatory drug using boron doped diamond and platinum electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Murugananthan, M., E-mail: muruga.chem@gmail.com [National Metallurgical Laboratory Madras Centre, CSIR Madras Complex, Taramani, Chennai 600 113 (India); Latha, S.S.; Bhaskar Raju, G. [National Metallurgical Laboratory Madras Centre, CSIR Madras Complex, Taramani, Chennai 600 113 (India); Yoshihara, S. [Department of Advanced Interdisciplinary Science, Graduate School of Engineering, Utsunomiya University, 7-1-2 Yoto, Utsunomiya, Tochigi 321-8585 (Japan)

    2010-08-15

    The mineralization of ketoprofen (KP) by anodic oxidation was studied by employing boron doped diamond (BDD) and Pt electrodes. The redox behavior of KP molecule, fouling of electrodes, generation of oxygen and active chlorine species were studied by cyclic voltammetry. The effect of electrolyte, pH of aqueous medium and applied current density on the mineralization behavior of KP was also investigated. The degradation and mineralization were monitored by UV-vis spectrophotometer and total organic carbon analyzer, respectively. The results were explained in terms of in situ generation of hydroxyl radical ({center_dot}OH), peroxodisulfate (S{sub 2}O{sub 8}{sup 2-}), and active chlorine species (Cl{sub 2}, HOCl, OCl{sup -}). The physisorbed {center_dot}OH on BDD was observed to trigger the combustion of KP in to CO{sub 2} and H{sub 2}O. The poor mineralization at both BDD and Pt anodes in the presence of NaCl as supporting electrolyte was ascribed to the formation of chlorinated organic compounds which are refractory. Complete mineralization of KP molecule was achieved using Na{sub 2}SO{sub 4} as supporting electrolyte.

  19. Boron doped diamond sensor for sensitive determination of metronidazole: Mechanistic and analytical study by cyclic voltammetry and square wave voltammetry.

    Science.gov (United States)

    Ammar, Hafedh Belhadj; Brahim, Mabrouk Ben; Abdelhédi, Ridha; Samet, Youssef

    2016-02-01

    The performance of boron-doped diamond (BDD) electrode for the detection of metronidazole (MTZ) as the most important drug of the group of 5-nitroimidazole was proven using cyclic voltammetry (CV) and square wave voltammetry (SWV) techniques. A comparison study between BDD, glassy carbon and silver electrodes on the electrochemical response was carried out. The process is pH-dependent. In neutral and alkaline media, one irreversible reduction peak related to the hydroxylamine derivative formation was registered, involving a total of four electrons. In acidic medium, a prepeak appears probably related to the adsorption affinity of hydroxylamine at the electrode surface. The BDD electrode showed higher sensitivity and reproducibility analytical response, compared with the other electrodes. The higher reduction peak current was registered at pH11. Under optimal conditions, a linear analytical curve was obtained for the MTZ concentration in the range of 0.2-4.2μmolL(-1), with a detection limit of 0.065μmolL(-1). Copyright © 2015 Elsevier B.V. All rights reserved.

  20. Electrochemical Sensing and Assessment of Parabens in Hydro- Alcoholic Solutions and Water Using a Boron-Doped Diamond Electrode.

    Science.gov (United States)

    Radovan, Ciprian; Cinghită, Dan; Manea, Florica; Mincea, Manuela; Cofan, Codruta; Ostafe, Vasile

    2008-07-25

    In this paper, the electrochemical behaviour of several parabens preservatives, i.e. esters of p-hydroxybenzoic acid, methyl-, ethyl- and propyl-4-hydroxybenzoates as methyl-, ethyl- and propyl-parabens (MB, EB, and PB), has been investigated at a commercial boron-doped diamond electrode (BDDE), especially in the anodic potential range, in both hydro-alcoholic and aqueous media. The cyclic voltammetric and chronoamperometric measurements yielded calibration plots with very good linearity (R2 between 0.990 and 0.998) and high sensitivity, useful for detection and analytical applications. The determination of the characteristics of individual compounds, of an "overall paraben index", the assessment of the stability and the saturation solubility in water, and the amperometric sensing and determination in double distilled, tap and river water matrix of the relatively slightly soluble investigated parabens have been carried out using electrochemical alternative. Estimated water solubility was correlated with the octanol-water partition coefficient. Several ideas regarding stability and persistence of the presumptive eco-toxic investigated preservatives in the environment or water systems have been adjacently discussed.

  1. Biofouling resistance of boron-doped diamond neural stimulation electrodes is superior to titanium nitride electrodes in vivo

    Science.gov (United States)

    Meijs, S.; Alcaide, M.; Sørensen, C.; McDonald, M.; Sørensen, S.; Rechendorff, K.; Gerhardt, A.; Nesladek, M.; Rijkhoff, N. J. M.; Pennisi, C. P.

    2016-10-01

    Objective. The goal of this study was to assess the electrochemical properties of boron-doped diamond (BDD) electrodes in relation to conventional titanium nitride (TiN) electrodes through in vitro and in vivo measurements. Approach. Electrochemical impedance spectroscopy, cyclic voltammetry and voltage transient (VT) measurements were performed in vitro after immersion in a 5% albumin solution and in vivo after subcutaneous implantation in rats for 6 weeks. Main results. In contrast to the TiN electrodes, the capacitance of the BDD electrodes was not significantly reduced in albumin solution. Furthermore, BDD electrodes displayed a decrease in the VTs and an increase in the pulsing capacitances immediately upon implantation, which remained stable throughout the whole implantation period, whereas the opposite was the case for the TiN electrodes. Significance. These results reveal that BDD electrodes possess a superior biofouling resistance, which provides significantly stable electrochemical properties both in protein solution as well as in vivo compared to TiN electrodes.

  2. Boron doped diamond thin films on large area Ti6Al4V substrates for electrochemical application

    Directory of Open Access Journals (Sweden)

    Alessandra V. Diniz

    2003-01-01

    Full Text Available Boron doped diamond thin films were grown on titanium alloy substrates (Ti6Al4V with 36 × 35 × 1.3 mm at 873-933 K at 6.5 × 10³ Pa during 8 h by hot filament CVD assisted technique. The boron source was obtained from a H2 line forced to pass through a bubbler containing B2O3 dissolved in methanol (BC = 6000 ppm. The films were grown on both sides of perforated and non-perforated substrates. Emphasis for diamond growing on perforated substrates have been done in order to increase the active surface area and hereafter to promote an easier electrolyte flow for wastewater treatment. The electrode performance was determined by cyclic voltammetry measurements in KCl, KNO3, Na2SO4, HCl, HNO3 and H2SO4 solutions and the reversibility behavior of the Fe(CN6(3-/4- at the Ti6Al4V/Diamond electrode were studied. Also, Scaning Electron Microcopy and Raman Scattering Spectroscopy were used for morphology and diamond quality evaluation, respectively.

  3. Experimental Approach to Controllably Vary Protein Oxidation While Minimizing Electrode Adsorption for Boron-Doped Diamond Electrochemical Surface Mapping Applications

    Energy Technology Data Exchange (ETDEWEB)

    McClintock, Carlee [ORNL; Hettich, Robert {Bob} L [ORNL

    2013-01-01

    Oxidative protein surface mapping has become a powerful approach for measuring the solvent accessibility of folded protein structures. A variety of techniques exist for generating the key reagent hydroxyl radicals for these measurements; however, many of these approaches require use of radioactive sources or caustic oxidizing chemicals. The purpose of this research was to evaluate and optimize the use of boron-doped diamond (BDD) electrochemistry as a highly accessible tool for producing hydroxyl radicals as a means to induce a controllable level of oxidation on a range of intact proteins. These experiments utilize a relatively high flow rates to reduce protein residence time inside the electrochemical flow chamber, along with a unique cell activation approach to improve control over the intact protein oxidation yield. Studies were conducted to evaluate the level of protein adsorption onto the electrode surface. This report demonstrates a robust protocol for the use of BDD electrochemistry and high performance LC-MS/MS as a high-throughput experimental pipeline for probing higher order protein structure, and illustrates how it is complementary to predictive computational modeling efforts.

  4. Highly Sensitive Measurement of Bio-Electric Potentials by Boron-Doped Diamond (BDD) Electrodes for Plant Monitoring.

    Science.gov (United States)

    Ochiai, Tsuyoshi; Tago, Shoko; Hayashi, Mio; Fujishima, Akira

    2015-10-23

    We describe a sensitive plant monitoring system by the detection of the bioelectric potentials in plants with boron-doped diamond (BDD) electrodes. For sensor electrodes, we used commercially available BDD, Ag, and Pt plate electrodes. We tested this approach on a hybrid species in the genus Opuntia (potted) and three different trees (ground-planted) at different places in Japan. For the Opuntia, we artificially induced bioelectric potential changes by the surface potential using the fingers. We detected substantial changes in bioelectric potentials through all electrodes during finger touches on the surface of potted Opuntia hybrid plants, although the BDD electrodes were several times more sensitive to bioelectric potential change compared to the other electrodes. Similarly for ground-planted trees, we found that both BDD and Pt electrodes detected bioelectric potential change induced by changing environmental factors (temperature and humidity) for months without replacing/removing/changing electrodes, BDD electrodes were 5-10 times more sensitive in this detection than Pt electrodes. Given these results, we conclude that BDD electrodes on live plant tissue were able to consistently detect bioelectrical potential changes in plants.

  5. Electrochemical degradation of phenol and 2-chloro phenol using Pt/Ti and boron-doped diamond electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Janghee; Lee, Byoungseob; Choi, Seyong; Won, Misook [Busan Center, Busan (Korea, Republic of); Shim, Yoonbo [Pusan National Univ., Busan (Korea, Republic of)

    2012-07-15

    To test the efficiency of the BDD electrode for complete mineralization of organic wastewater, phenol and 2-chloro phenol (2-CP) were treated electrochemically with both an active Pt/Ti electrode and a nonactive boron doped diamond (BDD) electrode, respectively, in neutral aqueous medium. Aqueous solutions of both phenol and 2-chloro phenol were treated electrochemically using an in-house fabricated flow through electrochemical cell (FTEC). The experimental variables included current input, treatment time, and the flow rate of the solutions. Depending on the magnitude of the applied current and reaction time, the compounds were either completely degraded or partially oxidized to other intermediates. Removal efficiencies reached as high as 93.2% and 94.8% both at the Pt/Ti electrode and BDD electrode, respectively, at an applied current of 200 mA for a 3.0 hr reaction and a flow rate of 4 mL/min. The BDD electrode was much more efficient for the complete mineralization of phenol and 2-chloro phenol than the Pt/Ti electrode.

  6. Sensitive Electrochemical Detection of Glucose at Glucose Oxidase-Cobalt Phthalocyanine-Modified Boron-Doped Diamond Electrode

    Directory of Open Access Journals (Sweden)

    Takeshi Kondo

    2012-01-01

    Full Text Available Electrochemical detection of glucose was achieved at a glucose oxidase (GOx-cobalt phthalocyanine (CoPc-modified boron-doped diamond (BDD electrode without any additional electron mediator in the electrolyte solution. The surface of the hydrogen-terminated BDD thin film prepared by microwave plasma-assisted CVD was modified with 4-vinylpyridine (4VP via photochemical modification. The 4VP-BDD was then immersed in a CoPc solution to obtain CoPc-BDD. A poly(p-phenylenediamine (PPD thin film containing GOx was coated on the CoPc-BDD electrode surface via electropolymerization. At the GOx/PPD-CoPc-BDD electrode, anodic current for glucose oxidation was observed with a sigmoidal voltammetric curve, indicating successful electron mediation of H2O2 generated as the result of glucose oxidation at GOx. The signal-to-background ratio for voltammetric current of glucose detection was larger at the GOx/PPD-CoPc-BDD electrode than at the GOx/PPD-modified platinum electrode due to the smaller background current of the modified BDD electrode.

  7. Electrochemically deposited Cu2O cubic particles on boron doped diamond substrate as efficient photocathode for solar hydrogen generation

    Science.gov (United States)

    Mavrokefalos, Christos K.; Hasan, Maksudul; Rohan, James F.; Compton, Richard G.; Foord, John S.

    2017-06-01

    Herein, we report a novel photocathode for the water splitting reaction. The electrochemical deposition of Cu2O particles on boron doped diamond (BDD) electrodes and the subsequent decoration with NiO nanoparticles by a dip coating method to act as co-catalyst for hydrogen evolution reaction is described. The morphology analysis by scanning electron microscope (SEM) revealed that Cu2O particles are cubic and decorated sporadically with NiO nanoparticles. X-ray photoelectron spectroscopy (XPS) confirmed the electronic interaction at the interface between Cu2O and NiO through a binding energy shift of the main Cu 2p peak. The photoelectrochemical (PEC) performance of NiO-Cu2O/BDD showed a much higher current density (-0.33 mA/cm2) and photoconversion efficiency (0.28%) compared to the unmodified Cu2O/BDD electrode, which are only -0.12 mA/cm2 and 0.06%, respectively. The enhancement in PEC performance is attributable to the synergy of NiO as an electron conduction mediator leading to the enhanced charge separation and transfer to the reaction interface for hydrogen evolution as evidenced by electrochemical impedance spectroscopy (EIS) and charge carrier density calculation. Stability tests showed that the NiO nanoparticles loading content on Cu2O surface is a crucial parameter in this regard.

  8. Comparative study of oxidation ability between boron-doped diamond (BDD) and lead oxide (PbO2) electrodes

    Science.gov (United States)

    Wei, Jun-Jun; Zhu, Xiu-Ping; Lü, Fan-Xiu; Ni, Jin-Ren

    2011-10-01

    The electrochemical oxidation capabilities of two high-performance electrodes, the boron-doped diamond film on Ti (Ti/BDD) and the lead oxide film on Ti (Ti/PbO2), were discussed. Hydroxyl radicals (·HO) generated on the electrode surface were detected by using p-nitrosodimethylaniline (RNO) as the trapping reagent. Electrochemical oxidation measurements, including the chemical oxygen demand (COD) removal and the current efficiency (CE), were carried out via the degradation of p-nitrophenol (PNP) under the galvanostatic condition. The results indicate that an indirect reaction, which is attributed to free hydroxyl radicals with high activation, conducts on the Ti/BDD electrode, while the absorbed hydroxyl radicals generated at the Ti/PbO2 surface results in low degradation efficiency. Due to quick mineralization which combusts PNP to CO2 and H2O absolutely by the active hydroxyl radical directly, the CE obtained on the Ti/BDD electrode is much higher than that on the Ti/PbO2 electrode, notwithstanding the number of hydroxyl radicals produced on PbO2 is higher than that on the BDD surface.

  9. Development of an electrochemical sensor for the determination of the total antioxidant capacity in berries based on boron doped diamond

    Directory of Open Access Journals (Sweden)

    BRUNA PEKEC

    2013-02-01

    Full Text Available Many antioxidants can be electrochemically oxidized using graphite-based electrodes; nevertheless problems arise due to the strong adsorption of redox species at the sensing area. We have demonstrated that boron doped diamond (BDD electrodes do not show this property, which can be exploited for the design of a new amperometric sensor for the quantification of antioxidants as “total antioxidant capacity” (AOC. As reference substances hydroquinone (HQ and 6-hydroxy-2,5,7,8-tetramethylchromane-2-carboxylic acid (Trolox were studied in more detail. The supporting electrolyte was a phosphate buffer solution (PBS, 0.1 mol/L, pH 7.0. The limits of detection (LOD were 1.5 mg/L and 2.5 mg/L for HQ and Trolox, respectively. The repeatability was 3 % RSD for concentration of 200 mg/L HQ. The method could be applied for the determination of AOC in different berry samples, such as strawberry, blueberry, grape and bramble. A comparison with a standard photometric assay showed good correlation between both methods. The BDD sensor features good reproducibility without fatiguing over at least two months of operation.

  10. Application of electrochemical technology for removing petroleum hydrocarbons from produced water using lead dioxide and boron-doped diamond electrodes.

    Science.gov (United States)

    Gargouri, Boutheina; Gargouri, Olfa Dridi; Gargouri, Bochra; Trabelsi, Souhel Kallel; Abdelhedi, Ridha; Bouaziz, Mohamed

    2014-12-01

    Although diverse methods exist for treating polluted water, the most promising and innovating technology is the electrochemical remediation process. This paper presents the anodic oxidation of real produced water (PW), generated by the petroleum exploration of the Petrobras plant-Tunisia. Experiments were conducted at different current densities (30, 50 and 100 mA cm(-2)) using the lead dioxide supported on tantalum (Ta/PbO2) and boron-doped diamond (BDD) anodes in an electrolytic batch cell. The electrolytic process was monitored by the chemical oxygen demand (COD) and the residual total petroleum hydrocarbon [TPH] in order to know the feasibility of electrochemical treatment. The characterization and quantification of petroleum wastewater components were performed by gas chromatography mass spectrometry. The COD removal was approximately 85% and 96% using PbO2 and BDD reached after 11 and 7h, respectively. Compared with PbO2, the BDD anode showed a better performance to remove petroleum hydrocarbons compounds from produced water. It provided a higher oxidation rate and it consumed lower energy. However, the energy consumption and process time make useless anodic oxidation for the complete elimination of pollutants from PW. Cytotoxicity has shown that electrochemical oxidation using BDD could be efficiently used to reduce more than 90% of hydrocarbons compounds. All results suggest that electrochemical oxidation could be an effective approach to treat highly concentrated organic pollutants present in the industrial petrochemical wastewater and significantly reduce the cost and time of treatment. Copyright © 2014 Elsevier Ltd. All rights reserved.

  11. Anodic stripping voltammetry of gold nanoparticles at boron-doped diamond electrodes and its application in immunochromatographic strip tests.

    Science.gov (United States)

    Ivandini, Tribidasari A; Wicaksono, Wiyogo P; Saepudin, Endang; Rismetov, Bakhadir; Einaga, Yasuaki

    2015-03-01

    Anodic stripping voltammetry (ASV) of colloidal gold-nanoparticles (AuNPs) was investigated at boron-doped diamond (BDD) electrodes in 50 mM HClO4. A deposition time of 300 s at-0.2 V (vs. Ag/AgCl) was fixed as the condition for the ASV. The voltammograms showed oxidation peaks that could be attributed to the oxidation of gold. These oxidation peaks were then investigated for potential application in immunochromatographic strip tests for the selective and quantitative detection of melamine, in which AuNPs were used as the label for the antibody of melamine. Linear regression of the oxidation peak currents appeared in the concentration range from 0.05-0.6 μg/mL melamine standard, with an estimated LOD of 0.069 μg/mL and an average relative standard deviation of 8.0%. This indicated that the method could be considered as an alternative method for selective and quantitative immunochromatographic applications. The validity was examined by the measurements of melamine injected into milk samples, which showed good recovery percentages during the measurements.

  12. Determination of vanillin in commercial food product by adsorptive stripping voltammetry using a boron-doped diamond electrode.

    Science.gov (United States)

    Yardım, Yavuz; Gülcan, Mehmet; Şentürk, Zühre

    2013-12-01

    A method for the determination of food additive vanillin was developed by adsorptive stripping voltammetry. Its determination was carried out at the anodically pre-treated boron-doped diamond electrode in aqueous solutions. Using square-wave stripping mode, the compound yielded a well-defined voltammetric response in phosphate buffer, pH 2.5 at +1.14 V (vs. Ag/AgCl) (a pre-concentration step being carried out at open-circuit condition for 60s). A linear calibration graph was obtained in the concentration range of 0.5-15.0 μg mL(-1) (3.3×10(-6)-9.8×10(-5) mol L(-1)) with a detection limit of 0.024 μg mL(-1) (1.6×10(-7) mol L(-1)). As an example, the practical applicability of the proposed method was tested for the determination of this flavouring agent in commercial pudding powder of Keshkule (Turkish milk pudding with almond flour).

  13. Use of a Boron Doped Spherical Phantom for the Investigation of Neutron Directional Properties: Comparison Between Experiment and MCNP Simulation

    Energy Technology Data Exchange (ETDEWEB)

    Drake, P.; Kierkegaard, J

    1999-07-01

    A boron doped 19 cm diameter spherical phantom was constructed to give information on the direction of neutrons inside the Ringhals 4 containment. The phantom was made of 40% paraffin and 60% boric acid. 10B contributes 2% of the total phantom weight. The phantom was tested for its angular sensitivity to neutrons. The response was tested with a {sup 252}Cf source and with a Monte Carlo calculation (MCNP) simulating a {sup 252}Cf source. In these investigations the phantom showed a strong directional response. However, there was only a fair correspondence between the experiment and the simulation. The discrepancies are, at least in part, due to the difference in energy and angular response of the dosemeters as compared with the idealised response characteristics in the MCNP calculation. In the MCNP calculation the experimental conditions were not fully simulated. The investigations also showed that the addition of boron to the phantom reduces the leakage of thermalised neutrons from the phantom, and the production of neutron induced photons in the phantom to insignificant levels. (author)

  14. Determination of propylthiouracil in pharmaceuticals by differential pulse voltammetry using a cathodically pretreated boron-doped diamond electrode

    Energy Technology Data Exchange (ETDEWEB)

    Sartori, Elen Romao [Universidade Estadual de Londrina, PR (Brazil). Dept. de Quimica; Trench, Aline Barrios; Rocha-Filho, Romeu C.; Fatibello-Filho, Orlando, E-mail: bello@ufscar.br [Universidade Federal de Sao Carlos (UFSCAR), SP (Brazil). Dept. de Quimica

    2013-09-15

    A simple procedure is described for the determination of propylthiouracil (PTU) by differential pulse voltammetry (DPV) using a cathodically pretreated boron-doped diamond (BDD) electrode. Cyclic voltammetry studies indicate that the oxidation of PTU is irreversible at a peak potential of 1.42 V (vs. Ag/AgCl (3.0 mol L{sup -1} KCl)) in a Britton-Robinson (BR) buffer solution (pH 2.0). Under optimized conditions, the obtained analytical curve was linear (r = 0.9985) for the PTU concentration range of 1.0 to 29.1 {mu}mol L{sup -1} in a BR buffer solution (pH 2.0), with a detection limit of 0.90 {mu}mol L{sup -1}. The proposed method was successfully applied in the determination of PTU in pharmaceutical samples, with results in agreement at a 95% confidence level with those obtained using an official titration method. (author)

  15. Electrophoretic analysis of biomarkers using capillary modification with gold nanoparticles embedded in a polycation and boron doped diamond electrode.

    Science.gov (United States)

    Zhou, Lin; Glennon, Jeremy D; Luong, John H T

    2010-08-15

    Field-amplified sample stacking using a fused silica capillary coated with gold nanoparticles (AuNPs) embedded in poly(diallyl dimethylammonium) chloride (PDDA) has been investigated for the electrophoretic separation of indoxyl sulfate, homovanillic acid (HVA), and vanillylmandelic acid (VMA). AuNPs (27 nm) exhibit ionic and hydrophobic interactions, as well as hydrogen bonding with the PDDA network to form a stable layer on the internal wall of the capillary. This approach reverses electro-osmotic flow allowing for fast migration of the analytes while retarding other endogenous compounds including ascorbic acid, uric acid, catecholamines, and indoleamines. Notably, the two closely related biomarkers of clinical significance, HVA and VMA, displayed differential interaction with PDDA-AuNPs which enabled the separation of this pair. The detection limit of the three analytes obtained by using a boron doped diamond electrode was approximately 75 nM, which was significantly below their normal physiological levels in biological fluids. This combined separation and detection scheme was applied to the direct analysis of these analytes and other interfering chemicals including uric and ascorbic acids in urine samples without off-line sample treatment or preconcentration.

  16. Pilot scale performance of the electro-oxidation of landfill leachate at boron-doped diamond anodes.

    Science.gov (United States)

    Anglada, Angela; Urtiaga, Ane; Ortiz, Inmaculada

    2009-03-15

    During the electrochemical oxidation of real wastewaters, the different species present in the effluent may interact creating complex scenarios making the prediction of the behavior of the whole system difficult. In this paper the different phenomena that occur during the electro-oxidation process of landfill leachate at a pilot plant scale with boron-doped diamond (BDD) anodes are elucidated. The total BDD anode area of the pilot plant was 1.05 m2. The evolution of the concentration of chloride ions, chlorate, and inorganic carbon and the value of pH and redox potential were found to be inter-related. In turn, the concentration of chloride affected the oxidation of ammonia, which took place through indirect oxidation by active chlorine. Moreover, chloride ions competed with organic matter to be oxidized at the anode. The effect of current density was also investigated. Organic matter and ammonia oxidation were highly influenced by the applied current density value. A change in the mechanism of organic matter oxidation was observed when high current densities were applied. Two mathematical models, previously applied to the oxidation of synthetic wastewaters in the literature, were able to predict the evolution of chemical oxygen demand and ammonia for low current density values.

  17. Voltammetric and electrochemical impedance spectroscopy characterization of a cathodic and anodic pre-treated boron doped diamond electrode

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, S. Carlos B. [Departamento de Quimica, Faculdade de Ciencias e Tecnologia, Universidade de Coimbra, 3004-535 Coimbra (Portugal); Oliveira-Brett, Ana Maria, E-mail: brett@ci.uc.p [Departamento de Quimica, Faculdade de Ciencias e Tecnologia, Universidade de Coimbra, 3004-535 Coimbra (Portugal)

    2010-06-01

    The effect of boron doped diamond (BDD) surface termination, immediately after cathodic and anodic electrochemical pre-treatments, on the electrochemical response of a BDD electrode in aqueous media and the influence of the different supporting electrolytes utilized in these pre-treatments on the final surface termination was investigated with [Fe(CN){sub 6}]{sup 4-/3-}, as redox probe, by cyclic and differential pulse voltammetry and electrochemical impedance spectroscopy. The cyclic voltammetry results indicate that the electrochemical behavior for the redox couple [Fe(CN){sub 6}]{sup 4-/3-} is very dependent on the state of the BDD surface, and a reversible response was observed after the cathodic electrochemical pre-treatment, whereas a quasi-reversible response occurred after anodic electrochemical pre-treatment. Differential pulse voltammetry in acetate buffer also showed that the potential window is very much influenced by the electrochemical pre-treatment of the BDD surface. Electroactivity of non-diamond carbon surface species (sp{sup 2} inclusions) incorporated into the diamond structure was observed after cathodic and anodic pre-treatments. Electrochemical impedance spectroscopy confirmed the cyclic voltammetry results and indicates that the BDD surface resistance and capacitance vary significantly with the electrolyte and with the electrochemical pre-treatment, caused by different surface terminations of the BDD electrode surface.

  18. Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Duchamp, M.; Boothroyd, C.B.; Dunin-Borkowski, R.E. [Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C) and Peter Gruenberg Institute (PGI), Forschungszentrum Juelich, D-52425 Juelich (Germany); Moreno, M.S. [Centro Atomico Bariloche, 8400 - S. C. de Bariloche (Argentina); Van Aken, B.B.; Soppe, W.J. [ECN Solar Energy, High Tech Campus, Building 5, 5656 AE Eindhoven (Netherlands)

    2013-03-07

    Electron energy-loss spectroscopy (EELS) is used to study p-doped layers in n-i-p amorphous thin film Si solar cells grown on steel foil substrates. For a solar cell in which an intrinsic amorphous hydrogenated Si (a-Si-H) layer is sandwiched between 10-nm-thick n-doped and p-doped a-Si:H layers, we assess whether core-loss EELS can be used to quantify the B concentration. We compare the shape of the measured B K edge with real space ab initio multiple scattering calculations and show that it is possible to separate the weak B K edge peak from the much stronger Si L edge fine structure by using log-normal fitting functions. The measured B concentration is compared with values obtained from secondary ion mass spectrometry, as well as with EELS results obtained from test samples that contain ?200-nm-thick a-Si:H layers co-doped with B and C. We also assess whether changes in volume plasmon energy can be related to the B concentration and/or to the density of the material and whether variations of the volume plasmon line-width can be correlated with differences in the scattering of valence electrons in differently doped a-Si:H layers.

  19. The effect of dopants on the brittle-to-ductile transition in silicon single crystals

    Science.gov (United States)

    Hong, Youn Jeong; Tanaka, Masaki; Maeno, Keiki; Higashida, Kenji

    2010-07-01

    The brittle-to-ductile transition (BDT) in boron, antimony and arsenic doped Cz silicon crystals has been experimentally studied, respectively. The BDT temperatures in antimony and arsenic doped silicon wafers are lower than that in a non-doped wafer while the BDT temperature in a boron doped wafer is almost the same as that in the non-doped wafer. The activation energy was obtained from the strain rate dependence of the BDT temperature. It was found that the values of the activation energy in the antimony and arsenic doped wafers are lower than that in the non-doped and boron doped wafers, indicating that the dislocation velocity in the antimony and arsenic doped silicon is faster than that in the non-doped while the dislocation velocity in the boron doped is the same as that in the non-doped. The effect of increasing in dislocation velocity on the BDT temperature was calculated by two-dimensional discrete dislocation dynamics simulations, indicating that the increasing in dislocation velocity decreases the BDT temperature in silicon single crystals.

  20. The effect of dopants on the brittle-to-ductile transition in silicon single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Youn Jeong; Tanaka, Masaki; Maeno, Keiki; Higashida, Kenji, E-mail: hong@kyudai-mse.or [Department of Materials Science and Engineering, Kyushu University, 744 Motooka, Fukuoka, 819-0395 (Japan)

    2010-07-01

    The brittle-to-ductile transition (BDT) in boron, antimony and arsenic doped Cz silicon crystals has been experimentally studied, respectively. The BDT temperatures in antimony and arsenic doped silicon wafers are lower than that in a non-doped wafer while the BDT temperature in a boron doped wafer is almost the same as that in the non-doped wafer. The activation energy was obtained from the strain rate dependence of the BDT temperature. It was found that the values of the activation energy in the antimony and arsenic doped wafers are lower than that in the non-doped and boron doped wafers, indicating that the dislocation velocity in the antimony and arsenic doped silicon is faster than that in the non-doped while the dislocation velocity in the boron doped is the same as that in the non-doped. The effect of increasing in dislocation velocity on the BDT temperature was calculated by two-dimensional discrete dislocation dynamics simulations, indicating that the increasing in dislocation velocity decreases the BDT temperature in silicon single crystals.

  1. Optical Properties and Boron Doping-Induced Conduction-Type Change in SnO2 Thin Films

    Science.gov (United States)

    Tran, Quang-Phu; Fang, Jau-Shiung; Chin, Tsung-Shune

    2016-01-01

    Boron-doped tin oxide (BTO) films, 0-5 at.% B, were prepared by sol-gel dip coating on a glass substrate. Dried precursor films were post-annealed at a temperature between 400°C and 750°C for 2 h. The obtained BTO thin films were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet-visible light (UV-Vis) spectrometry, a four-point probe, and Hall-effect and Seebeck-effect measurements. Optimal optical transmittance was achieved for post-annealed BTO thin film at 700°C. XRD results show a rutile SnO2 structure with a preferred (110) orientation for all the films. The grain size is 47-21 nm, which reduces with increasing B contents. The optical transmittance is 84.6-88.5% at a wavelength of 550 nm and optical band gap of 3.52-3.75 eV. Electrical resistivity is (3.4-8.2) × 10-3 Ω cm, and figure of merit (0.9-4.3) × 10-3 Ω-1. Carrier concentration is (0.97-7.4) × 1020 cm-3 and mobility (2.5-7.8) cm2 V-1 s-1. BTO film with 4 at.% B shows an optimal combination of properties. Conduction type changes from n- (undoped) to p- (1-4 at.% B), then to n-types (5 at.% B), as evidenced from Hall-effect and Seebeck-effect measurements. This is explained by doping-generated defects and phase separations of Sn3O4 and B2O3.

  2. Electrolyzing synthesis of boron-doped graphene quantum dots for fluorescence determination of Fe(3+) ions in water samples.

    Science.gov (United States)

    Chen, Li; Wu, Chuanli; Du, Pan; Feng, Xiaowei; Wu, Ping; Cai, Chenxin

    2017-03-01

    This work reports a facile electrolyzing method to synthesize boron-doped graphene quantum dots (BGQDs) and uses the BGQDs as a fluorescent probe to determine Fe(3+) ion levels in water samples. The BGQDs were produced by oxidizing graphite in an aqueous borax solution at pH 7; then, the borate solution was filtered with BGQDs, and the borate was dialyzed from the filtrate, leaving a solution of BGQDs in water. The amount of the B in the BGQDs can be adjusted by changing the concentration of borax used for the electrolyte. The excitation wavelength- and B amount-dependent fluorescence characteristics of BQGDs were studied. The fluorescence intensity of the BGQDs is measurable in real time, and its quenching is very sensitive to the concentration of Fe(3+) ions in the system but not to other possible coexisting metal ions. The fluorescence quenching mechanism of Fe(3+) ions to BGQDs is studied and explained based on electrochemical voltammetry and DFT simulations. The analytical signal, which is defined as F0/F, where F0 and F are the fluorescence intensities of the BGQDs before and after interaction with Fe(3+) ions, respectively, displays a good linear relationship in the Fe(3+) ion concentration range of 0.01-100µm with a correlation coefficient of 0.999 and a limit of detection (LOD) of ~(0.005±0.001) μM. The LOD value is much lower than the water quality standards for Fe(3+) ions (0.3ppm, ~5.36µm) in drinking water suggested by the WHO (World Health Organization) and EPA (U.S. Environmental Protection Agency), implying that this method has great potential for applications in real sample assays. For example, the determination of the Fe(3+) ion levels in three water samples (tap water, groundwater, and lake water) gives approximately the same results as those determined by the EPA-recommended AAS (atomic adsorption spectroscopy) method.

  3. Determination of parabens in shampoo using high performance liquid chromatography with amperometric detection on a boron-doped diamond electrode.

    Science.gov (United States)

    Martins, Isarita; Carreira, Franciely Cristiani; Canaes, Larissa S; de Souza Campos Junior, Francisco Alberto; da Silva Cruz, Letícia Maria; Rath, Susanne

    2011-07-15

    Methylparaben (MePa), ethylparaben (EtPa) and propylparaben (PrPa) have been widely used, among others, as chemical preservatives in cosmetics, drugs and foods. As these compounds are linked with allergies, dermatitis and estrogenic properties, it is necessary to control the concentration of these substances in different matrices. The aim of this paper are: to evaluate the electrochemical behavior of parabens on the boron-doped diamond (BDD) electrode and the development of a chromatographic method, with electrochemical detection (HPLC-ED), for determination of parabens in shampoo. A BDD (8000 ppm) electrode was adapted in a thin layer mode analytical cell consisting of a stainless steel and a platinum wire as reference and auxiliary electrodes, respectively. Chromatographic separations were obtained with a reversed phase C8 analytical column and a mobile phase of 0.025 molL(-1) disodium phosphate, pH 7.0, and acetonitrile (40:60, v/v), delivered at a flow rate of 1.0 mL min(-1). Sample preparation was performed by solid phase extraction using C18 cartridges and acetonitrile for elution. Benzylparaben was employed as internal standard. The HPLC-ED method developed, using the BDD electrode, was validated for the determination of parabens in shampoos and presented adequate linearity (>0.999), in the range of 0.0125-0.500% (w/w), detectability 0.01% (w/w), precision (RSD of 2.3-9.8%) and accuracy (93.1-104.4%) and could be applied for routine quality control of shampoos containing MePa, EtPa and PrPa. Copyright © 2011 Elsevier B.V. All rights reserved.

  4. Mineralization of the recalcitrant oxalic and oxamic acids by electrochemical advanced oxidation processes using a boron-doped diamond anode.

    Science.gov (United States)

    Garcia-Segura, Sergi; Brillas, Enric

    2011-04-01

    Oxalic and oxamic acids are the ultimate and more persistent by-products of the degradation of N-aromatics by electrochemical advanced oxidation processes (EAOPs). In this paper, the kinetics and oxidative paths of these acids have been studied for several EAOPs using a boron-doped diamond (BDD) anode and a stainless steel or an air-diffusion cathode. Anodic oxidation (AO-BDD) in the presence of Fe(2+) (AO-BDD-Fe(2+)) and under UVA irradiation (AO-BDD-Fe(2+)-UVA), along with electro-Fenton (EF-BDD), was tested. The oxidation of both acids and their iron complexes on BDD was clarified by cyclic voltammetry. AO-BDD allowed the overall mineralization of oxalic acid, but oxamic acid was removed much more slowly. Each acid underwent a similar decay in AO-BDD-Fe(2+) and EF-BDD, as expected if its iron complexes were not attacked by hydroxyl radicals in the bulk. The faster and total mineralization of both acids was achieved in AO-BDD-Fe(2+)-UVA due to the high photoactivity of their Fe(III) complexes that were continuously regenerated by oxidation of their Fe(II) complexes. Oxamic acid always released a larger proportion of NH(4)(+) than NO(3)(-) ion, as well as volatile NO(x) species. Both acids were independently oxidized at the anode in AO-BDD, but in AO-BDD-Fe(2+)-UVA oxamic acid was more slowly degraded as its content decreased, without significant effect on oxalic acid decay. The increase in current density enhanced the oxidation power of the latter method, with loss of efficiency. High Fe(2+) contents inhibited the oxidation of Fe(II) complexes by the competitive oxidation of Fe(2+) to Fe(3+). Low current densities and Fe(2+) contents are preferable to remove more efficiently these acids by the most potent AO-BDD-Fe(2+)-UVA method.

  5. Electrochemical treatment of reverse osmosis concentrate on boron-doped electrodes in undivided and divided cell configurations

    Energy Technology Data Exchange (ETDEWEB)

    Bagastyo, Arseto Y. [Advanced Water Management Centre, The University of Queensland, St Lucia, QLD 4072 (Australia); Department of Environmental Engineering, Institut Teknologi Sepuluh Nopember, Surabaya 60111 (Indonesia); Batstone, Damien J. [Advanced Water Management Centre, The University of Queensland, St Lucia, QLD 4072 (Australia); Kristiana, Ina [Curtin Water Quality Research Centre, Resources and Chemistry Precinct, Department of Chemistry, Curtin University, Bentley, Perth, WA 6102 (Australia); Escher, Beate I. [National Research Centre for Environmental Toxicology (Entox), The University of Queensland, Brisbane, QLD 4108 (Australia); Joll, Cynthia [Curtin Water Quality Research Centre, Resources and Chemistry Precinct, Department of Chemistry, Curtin University, Bentley, Perth, WA 6102 (Australia); Radjenovic, Jelena, E-mail: j.radjenovic@uq.edu.au [Advanced Water Management Centre, The University of Queensland, St Lucia, QLD 4072 (Australia)

    2014-08-30

    Highlights: • 100% of COD and ∼70% of DOC was removed in both cell configurations. • ∼21.7 mg L{sup −1} of AOCl and ∼2.3 mg L{sup −1} of AOBr was formed regardless of the membrane use. • The TEQ was far lower than expected given the high AOCl concentrations. • The undivided cell consumed lower energy compared to the divided cell. - Abstract: An undivided electrolytic cell may offer lower electrochlorination through reduction of chlorine/hypochlorite at the cathode. This study investigated the performance of electrooxidation of reverse osmosis concentrate using boron-doped diamond electrodes in membrane-divided and undivided cells. In both cell configurations, similar extents of chemical oxygen demand and dissolved organic carbon removal were obtained. Continuous formation of chlorinated organic compounds was observed regardless of the membrane presence. However, halogenation of the organic matter did not result in a corresponding increase in toxicity (Vibrio fischeri bioassay performed on extracted samples), with toxicity decreasing slightly until 10 Ah L{sup −1}, and generally remaining near the initial baseline-toxicity equivalent concentration (TEQ) of the raw concentrate (i.e., ∼2 mg L{sup −1}). The exception was a high range toxicity measure in the undivided cell (i.e., TEQ = 11 mg L{sup −1} at 2.4 Ah L{sup −1}), which rapidly decreased to 4 mg L{sup −1}. The discrepancy between the halogenated organic matter and toxicity patterns may be a consequence of volatile and/or polar halogenated by-products formed in oxidation by OH· electrogenerated at the anode. The undivided cell exhibited lower energy compared to the divided cell, 0.25 kWh gCOD{sup −1} and 0.34 kWh gCOD{sup −1}, respectively, yet it did not demonstrate any improvement regarding by-products formation.

  6. Conductive Boron-Doped Graphene as an Ideal Material for Electrocatalytically Switchable and High-Capacity Hydrogen Storage.

    Science.gov (United States)

    Tan, Xin; Tahini, Hassan A; Smith, Sean C

    2016-12-07

    Electrocatalytic, switchable hydrogen storage promises both tunable kinetics and facile reversibility without the need for specific catalysts. The feasibility of this approach relies on having materials that are easy to synthesize, possessing good electrical conductivities. Graphitic carbon nitride (g-C4N3) has been predicted to display charge-responsive binding with molecular hydrogen-the only such conductive sorbent material that has been discovered to date. As yet, however, this conductive variant of graphitic carbon nitride is not readily synthesized by scalable methods. Here, we examine the possibility of conductive and easily synthesized boron-doped graphene nanosheets (B-doped graphene) as sorbent materials for practical applications of electrocatalytically switchable hydrogen storage. Using first-principle calculations, we find that the adsorption energy of H2 molecules on B-doped graphene can be dramatically enhanced by removing electrons from and thereby positively charging the adsorbent. Thus, by controlling charge injected or depleted from the adsorbent, one can effectively tune the storage/release processes which occur spontaneously without any energy barriers. At full hydrogen coverage, the positively charged BC5 achieves high storage capacities up to 5.3 wt %. Importantly, B-doped graphene, such as BC49, BC7, and BC5, have good electrical conductivity and can be easily synthesized by scalable methods, which positions this class of material as a very good candidate for charge injection/release. These predictions pave the route for practical implementation of electrocatalytic systems with switchable storage/release capacities that offer high capacity for hydrogen storage.

  7. Assessments of the Effect of Increasingly Severe Cathodic Pretreatments on the Electrochemical Activity of Polycrystalline Boron-Doped Diamond Electrodes.

    Science.gov (United States)

    Brocenschi, Ricardo F; Hammer, Peter; Deslouis, Claude; Rocha-Filho, Romeu C

    2016-05-17

    The electrochemical response of many redox species on boron-doped diamond (BDD) electrodes can be strongly dependent on the type of chemical termination on their surface, hydrogen (HT-BDD) or oxygen (OT-BDD). For instance, on an HT-BDD electrode the [Fe(CN)6](3-/4-) redox system presents a reversible voltammetric behavior, whereas the oxidation overpotential of ascorbic acid (AA) is significantly decreased. Moreover, the electrochemical activity of BDD electrodes can be significantly affected by electrochemical pretreatments, with cathodic pretreatments (CPTs) leading to redox behaviors associated with HT-BDD. Here we report on the effect of increasingly severe CPTs on the electrochemical activity of a highly doped BDD electrode, assessed with the [Fe(CN)6](3-/4-) and AA redox probes, and on the atomic bonding structure on the BDD surface, assessed by XPS. The hydrogenation level of the BDD surface was increased by CPTs, leading to decreases of the total relative level of oxidation of the BDD surface of up to 36%. Contrary to what is commonly assumed, we show that BDD surfaces do not need to be highly hydrogenated to ensure that a reversible voltammetric behavior is obtained for Fe(CN)6](3-/4-); after a CPT, this was attained even when the total relative level of oxidation on the BDD surface was about 15%. At the same time, the overpotential for AA oxidation was confirmed as being very sensitive to the level of oxidation of the BDD surface, a behavior that might allow the use of AA as a secondary indicator of the relative atomic bonding structure on the BDD surface.

  8. Degradation of the insecticide propoxur by electrochemical advanced oxidation processes using a boron-doped diamond/air-diffusion cell.

    Science.gov (United States)

    Guelfi, Diego Roberto Vieira; Gozzi, Fábio; Sirés, Ignasi; Brillas, Enric; Machulek, Amílcar; de Oliveira, Silvio César

    2017-03-01

    A solution with 0.38 mM of the pesticide propoxur (PX) at pH 3.0 has been comparatively treated by electrochemical oxidation with electrogenerated H2O2 (EO-H2O2), electro-Fenton (EF), and photoelectro-Fenton (PEF). The trials were carried out with a 100-mL boron-doped diamond (BDD)/air-diffusion cell. The EO-H2O2 process had the lowest oxidation ability due to the slow reaction of intermediates with (•)OH produced from water discharge at the BDD anode. The EF treatment yielded quicker mineralization due to the additional (•)OH formed between added Fe(2+) and electrogenerated H2O2. The PEF process was the most powerful since it led to total mineralization by the combined oxidative action of hydroxyl radicals and UVA irradiation. The PX decay agreed with a pseudo-first-order kinetics in EO-H2O2, whereas in EF and PEF, it obeyed a much faster pseudo-first-order kinetics followed by a much slower one, which are related to the oxidation of its Fe(II) and Fe(III) complexes, respectively. EO-H2O2 showed similar oxidation ability within the pH range 3.0-9.0. The effect of current density and Fe(2+) and substrate contents on the performance of the EF process was examined. Two primary aromatic products were identified by LC-MS during PX degradation.

  9. Removal of organic contaminants from secondary effluent by anodic oxidation with a boron-doped diamond anode as tertiary treatment

    Energy Technology Data Exchange (ETDEWEB)

    Garcia-Segura, Sergi, E-mail: sergigarcia@ub.edu [Advanced Water Management Centre, The University of Queensland, Level 4, Gehrmann Bld. (60), St Lucia, QLD 072 (Australia); Laboratori d’Electroquímica dels Materials i del Medi Ambient, Departament de Química Física, Facultat de Química, Universitat de Barcelona, Martí i Franquès 1-11, 08028 Barcelona (Spain); Keller, Jürg [Advanced Water Management Centre, The University of Queensland, Level 4, Gehrmann Bld. (60), St Lucia, QLD 072 (Australia); Brillas, Enric [Laboratori d’Electroquímica dels Materials i del Medi Ambient, Departament de Química Física, Facultat de Química, Universitat de Barcelona, Martí i Franquès 1-11, 08028 Barcelona (Spain); Radjenovic, Jelena, E-mail: j.radjenovic@awmc.uq.edu.au [Advanced Water Management Centre, The University of Queensland, Level 4, Gehrmann Bld. (60), St Lucia, QLD 072 (Australia)

    2015-02-11

    Graphical abstract: - Highlights: • Mineralization of secondary effluent by anodic oxidation with BDD anode. • Complete removal of 29 pharmaceuticals and pesticides at trace level concentrations. • Organochlorine and organobromine byproducts were formed at low μM concentrations. • Chlorine species evolution assessed to evaluate the anodic oxidation applicability. - Abstract: Electrochemical advanced oxidation processes (EAOPs) have been widely investigated as promising technologies to remove trace organic contaminants from water, but have rarely been used for the treatment of real waste streams. Anodic oxidation with a boron-doped diamond (BDD) anode was applied for the treatment of secondary effluent from a municipal sewage treatment plant containing 29 target pharmaceuticals and pesticides. The effectiveness of the treatment was assessed from the contaminants decay, dissolved organic carbon and chemical oxygen demand removal. The effect of applied current and pH was evaluated. Almost complete mineralization of effluent organic matter and trace contaminants can be obtained by this EAOP primarily due to the action of hydroxyl radicals formed at the BDD surface. The oxidation of Cl{sup −} ions present in the wastewater at the BDD anode gave rise to active chlorine species (Cl{sub 2}/HClO/ClO{sup −}), which are competitive oxidizing agents yielding chloramines and organohalogen byproducts, quantified as adsorbable organic halogen. However, further anodic oxidation of HClO/ClO{sup −} species led to the production of ClO{sub 3}{sup −} and ClO{sub 4}{sup −} ions. The formation of these species hampers the application as a single-stage tertiary treatment, but posterior cathodic reduction of chlorate and perchlorate species may reduce the risks associated to their presence in the environment.

  10. Electronic structures of B 2p levels in homo-epitaxial growth boron-doped diamond by soft X-rays absorption spectroscopy

    Science.gov (United States)

    Nakamura, Jin; Kabasawa, Eiki; Harada, Yoshihisa; Iriyama, Shingo; Kawano, Akihiro; Oguchi, Tamio; Kuroki, Kazuhiko; Takano, Yoshihiko; Kawarada, Hiroshi

    2010-12-01

    Four B-2p in-gap components are observed in B-K XAS spectra using single crystalline boron-doped diamond (BDD) sample. From the polarization dependence of the spectra, the weak peak labeled 1 near the Fermi level is assigned to the hybridized state with C-2p hole state. For the BDD sample grown along direction, B2 dimer is easily created along the growth direction and compensate carriers. A considerable amount of B-H complex and/or Bn cluster is also present. A growth of the peak-1 area intensity is most important to rise the superconducting transition temperature of BDD.

  11. Anodic behavior of sertindole and its voltammetric determination in pharmaceuticals and human serum using glassy carbon and boron-doped diamond electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Altun, Yuksel [Gazi University, Faculty of Education, Department of Chemistry, 06500 Teknikokullar, Ankara (Turkey); Dogan-Topal, Burcu; Uslu, Bengi [Ankara University, Faculty of Pharmacy, Department of Analytical Chemistry, 06100 Tandogan, Ankara (Turkey); Ozkan, Sibel A. [Ankara University, Faculty of Pharmacy, Department of Analytical Chemistry, 06100 Tandogan, Ankara (Turkey)], E-mail: ozkan@pharmacy.ankara.edu.tr

    2009-02-15

    The electrochemical oxidation of sertindole was investigated using cyclic, linear sweep voltammetry at a glassy carbon and boron-doped diamond electrodes. The aim of this study was to determine sertindole levels in serum and pharmaceutical formulations, by means of electrochemical methods. In cyclic voltammetry, depending on pH values, sertindole showed one or two irreversible oxidation responses. These two responses were found related to the different electroactive part of the molecule. Using second and sharp oxidation peak, two voltammetric methods were described for the determination of sertindole by differential pulse and square wave voltammetry at the glassy carbon and boron-doped diamond electrodes. Under optimized conditions, the current showed a linear dependence with concentration in the range between 1 x 10{sup -6} and 1 x 10{sup -4} M in acetate buffer at pH 3.5 and between 4 x 10{sup -6} and 1 x 10{sup -4} M in spiked human serum samples for both methods. The repeatability, reproducibility, selectivity, precision and accuracy of all the methods in all media were investigated and calculated. These methods were successfully applied for the analysis of sertindole pharmaceutical dosage forms and human serum samples. No electroactive interferences from the tablet excipients and endogenous substances from biological material were found.

  12. Synergistic effect on the visible light activity of Ti3+ doped TiO2 nanorods/boron doped graphene composite.

    Science.gov (United States)

    Xing, Mingyang; Li, Xiao; Zhang, Jinlong

    2014-06-30

    TiO2/graphene (TiO2-x/GR) composites, which are Ti(3+) self-doped TiO2 nanorods decorated on boron doped graphene sheets, were synthesized via a simple one-step hydrothermal method using low-cost NaBH4 as both a reducing agent and a boron dopant on graphene. The resulting TiO2 nanorods were about 200 nm in length with exposed (100) and (010) facets. The samples were characterized by X-ray diffraction (XRD), UV-visible diffuse reflectance spectroscopy, X-band electron paramagnetic resonance (EPR), X-ray photoelectron spectra (XPS), transmission electron microscope (TEM), Raman, and Fourier-transform infrared spectroscopy (FTIR). The XRD results suggest that the prepared samples have an anatase crystalline structure. All of the composites tested exhibited improved photocatalytic activities as measured by the degradation of methylene blue and phenol under visible light irradiation. This improvement was attributed to the synergistic effect of Ti(3+) self-doping on TiO2 nanorods and boron doping on graphene.

  13. Thin layer of ordered boron-doped TiO2 nanotubes fabricated in a novel type of electrolyte and characterized by remarkably improved photoactivity

    Science.gov (United States)

    Siuzdak, Katarzyna; Szkoda, Mariusz; Lisowska-Oleksiak, Anna; Grochowska, Katarzyna; Karczewski, Jakub; Ryl, Jacek

    2015-12-01

    This paper reports a novel method of boron doped titania nanotube arrays preparation by electrochemical anodization in electrolyte containing boron precursor - boron trifluoride diethyl etherate (BF3 C4H10O), simultaneously acting as an anodizing agent. A pure, ordered TiO2 nanotubes array, as a reference sample, was also prepared in solution containing a standard etching compound: ammonium fluoride. The doped and pure titania were characterized by scanning electron microscopy, UV-vis spectroscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, photoluminescence emission spectroscopy and by means of electrochemical methods. The B-doping decidedly shifts the absorption edge of TiO2 nanotubes towards the visible light region and significantly inhibits the radiative recombination processes. Despite the fact that the doped sample is characterized by 4.6 lower real surface area when compared to pure titania, it leads to the decomposition of methylene blue in 93%, that is over 2.3 times higher than the degradation efficiency exhibited by the undoped material. The formation rate of hydroxyl radicals (rad OH) upon illumination significantly favours boron doped titania as a photocatalytic material. Moreover, the simple doping of TiO2 nanotubes array results in the enhancement of generated photocurrent from 120 μA/cm2 to 350 μA/cm2 registered for undoped and doped electrode, respectively.

  14. Surface chemistry of boron-doped SiO{sub 2} CVD: Enhanced uptake of tetraethyl orthosilicate by hydroxyl groups bonded to boron

    Energy Technology Data Exchange (ETDEWEB)

    Bartram, M.E.; Moffat, H.K.

    1993-12-31

    Insight into how dopants can enhance deposition rates has been obtained by comparing reactivities of tetraethyl orthosilicate (TEOS, Si(OCH{sub 2}CH{sub 3}){sub 4}) with silanol and boranol groups on SiO{sub 2}. This comparison is relevant for boron-doped SiO{sub 2} film growth from TEOS and trimethyl borate (TMB, B(OCH{sub 3}){sub 3}) sources since boranols and silanols are expected to be present on surface during the (CVD). A silica substrate having coadsorbed deuterated silanols (SIOD) and boranols (BOD) was reacted with TEOS in a cold-wall reactor in the mTorr pressure regime at 1000K. Reactions were followed with Fourier transform infrared spectroscopy. Use of deuterated hydroxyls allowed consumption of hydroxyls by TEOS chemisorption to be distinguished from concurrent formation of SIOH and BOH that results from TEOS decomposition. It was found that TEOS reacts with BOD at twice the rate observed for SIOD demonstrating that hydroxyl groups bonded to boron increase the rate of TEOS chemisorption. Surface ethoxy groups produced by chemisorption of TEOS decompose at a slower rate in the presence of TMB decomposition products. Possible dependencies on reactor geometries and other deposition conditions may determine which of these two competing effects will control deposition rates. This may explain (in part) why the rate enhancement effect is not always observed in boron-doped SiO{sub 2} CVD processes.

  15. Sol-gel-modified boron-doped diamond surfaces for methanol and ethanol electro-oxidation in acid medium

    Science.gov (United States)

    Salazar-Banda, G. R.; Suffredini, H. B.; Calegaro, M. L.; Tanimoto, S. T.; Avaca, L. A.

    Studies of the methanol and ethanol electro-oxidation reactions on boron-doped diamond (BDD) electrode surfaces modified with Pt, Pt-RuO 2 and Pt-RuO 2-RhO 2 by the sol-gel method are reported here. The materials were initially characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX). The XRD analyses indicate that the sol-gel method produces nano-sized deposits on the BDD surfaces. These deposits also form nano-clusters with a size of ca. 100 nm as observed by SEM and AFM. The EDX maps showed that the metals are homogeneously distributed on the BDD surface and have a composition close to the expected one. Cyclic voltammetry experiments in acid medium revealed that the CO poisoning effect for the methanol and the ethanol oxidation reactions is largely inhibited on the Pt-RuO 2-RhO 2/BDD electrode showing the positive contribution of the rhodium oxide to the electrocatalysts performance in these reactions. Potentiostatic polarization curves and the corresponding Tafel plots showed that the addition of RuO 2 and RhO 2 to Pt/BDD produces a more reactive electrocatalyst that adsorbs methanol and ethanol more efficiently and changes the reactions onsets by 120 or 180 mV towards less positive potentials, respectively. Moreover, the stationary current density measured at a fixed potential for ethanol oxidation on the Pt-RuO 2-RhO 2/BDD composite electrode is more than one order of magnitude larger than on a Pt/BDD surface. In addition, chronoamperometric experiments indicate that on those composite electrodes the effect of CO poisoning only appears after a considerable amount of charge has passed through the interface. Consequently, the catalyst containing Pt, RuO 2 and RhO 2 deposited on BDD by the sol-gel method is a very promising composite material to be used in fuel cell anodes.

  16. Application of a boron doped diamond (BDD) electrode as an anode for the electrolytic reduction of UO{sub 2} in Li{sub 2}O-LiCl-KCl molten salt

    Energy Technology Data Exchange (ETDEWEB)

    Park, Wooshin, E-mail: wooshin@kaeri.re.kr [Nuclear Fuel Cycle Process Development Division, Korea Atomic Energy Research Institute (KAERI), 111, 989 Daedeok-daero, Yuseong-gu, Daejeon 305-353 (Korea, Republic of); Kim, Jong-Kook; Hur, Jin-Mok; Choi, Eun-Young; Im, Hun Suk; Hong, Sun-Seok [Nuclear Fuel Cycle Process Development Division, Korea Atomic Energy Research Institute (KAERI), 111, 989 Daedeok-daero, Yuseong-gu, Daejeon 305-353 (Korea, Republic of)

    2013-01-15

    A boron doped diamond thin film electrode was employed as an inert anode to replace a platinum electrode in a conventional electrolytic reduction process for UO{sub 2} reduction in Li{sub 2}O-LiCl molten salt at 650 Degree-Sign C. The molten salt was changed into Li{sub 2}O-LiCl-KCl to decrease the operation temperature to 550 Degree-Sign C at which the boron doped diamond was chemically stable. The potential for oxygen evolution on the boron doped diamond electrode was determined to be approximately 2.2 V vs. a Li-Pb reference electrode whereas that for Li deposition was around -0.58 V. The density of the anodic current was low compared to that of the cathodic current. Thus the potential of the cathode might not reach the potential for Li deposition if the surface area of the cathode is too wide compared to that of the anode. Therefore, the ratio of the surface areas of the cathode and anode should be precisely controlled. Because the reduction of UO{sub 2} is dependent on the reaction with Li, the deposition of Li is a prerequisite in the reduction process. In a consecutive reduction run, it was proved that the boron doped diamond could be employed as an inert anode.

  17. Amorphous silicon passivation for 23.3% laser processed back contact solar cells

    Science.gov (United States)

    Carstens, Kai; Dahlinger, Morris; Hoffmann, Erik; Zapf-Gottwick, Renate; Werner, Jürgen H.

    2017-08-01

    This paper presents amorphous silicon deposited at temperatures below 200 °C, leading to an excellent passivation layer for boron doped emitter and phosphorus doped back surface field areas in interdigitated back contact solar cells. A higher deposition temperature degrades the passivation of the boron emitter by an increased hydrogen effusion due to lower silicon hydrogen bond energy, proved by hydrogen effusion measurements. The high boron surface doping in crystalline silicon causes a band bending in the amorphous silicon. Under these conditions, at the interface, the intentionally undoped amorphous silicon becomes p-type conducting, with the consequence of an increased dangling bond defect density. For bulk amorphous silicon this effect is described by the defect pool model. We demonstrate, that the defect pool model is also applicable to the interface between amorphous and crystalline silicon. Our simulation shows the shift of the Fermi energy towards the valence band edge to be more pronounced for high temperature deposited amorphous silicon having a small bandgap. Application of optimized amorphous silicon as passivation layer for the boron doped emitter and phosphorus doped back surface field on the rear side of laser processed back contact solar cells, fabricated using four laser processing steps, yields an efficiency of 23.3%.

  18. Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zeng, Xiangbin, E-mail: eexbzeng@mail.hust.edu.cn; Wen, Xixing; Sun, Xiaohu; Liao, Wugang; Wen, Yangyang

    2016-04-30

    Boron-doped zinc oxide (BZO) films were grown by metal organic chemical vapor deposition. The influence of B{sub 2}H{sub 6} flow rate and substrate temperature on the microstructure, optical, and electrical properties of BZO films was investigated by X-ray diffraction spectrum, scanning electron microscope, optical transmittance spectrum, and Hall measurements. The BZO films with optical transmittance above 85% in the visible and infrared light range, resistivity of 0.9–1.0 × 10{sup −3} Ω cm, mobility of 16.5–25.5 cm{sup 2}/Vs, and carrier concentration of 2.2–2.7 × 10{sup 20} cm{sup −3} were deposited under optimized conditions. The optimum BZO films were applied on the bifacial BZO/p-type a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n{sup +}-type a-Si:H/BZO heterojunction solar cell as both front and back transparent electrodes. Meanwhile, the bifacial heterojunction solar cell with indium tin oxide (ITO) as both front and back transparent electrodes was fabricated. The efficiencies of 17.788% (open-circuit voltage: 0.628 V, short-circuit current density: 41.756 mA/cm{sup 2} and fill factor: 0.678) and 16.443% (open-circuit voltage: 0.590 V, short-circuit current density: 36.515 mA/cm{sup 2} and fill factor: 0.762) were obtained on the a-Si/c-Si heterojunction solar cell with BZO and ITO transparent electrodes, respectively. - Highlights: • Boron-doped zinc oxide films with low resistivity were fabricated. • The boron-doped zinc oxide films have the high transmittance. • B-doped ZnO film was applied in a-Si:H/c-Si solar cell as transparent electrodes. • The a-Si:H/c-Si solar cell with efficiency of 17.788% was obtained.

  19. Heavily doped polysilicon-contact solar cells

    Science.gov (United States)

    Lindholm, F. A.; Neugroschel, A.; Arienzo, M.; Iles, P. A.

    1985-01-01

    The first use of a (silicon)/heavily doped polysilicon)/(metal) structure to replace the conventional high-low junction or back-surface-field (BSF) structure of silicon solar cells is reported. Compared with BSF and back-ohmic-contact (BOC) control samples, the polysilicon-back solar cells show improvements in red spectral response (RSR) and open-circuit voltage. Measurement reveals that a decrease in effective surface recombination velocity S is responsible for this improvement. Decreased S results for n-type (Si:As) polysilicon, consistent with past findings for bipolar transistors, and for p-type (Si:B) polysilicon, reported here for the first time. Though the present polysilicon-back solar cells are far from optimal, the results suggest a new class of designs for high efficiency silicon solar cells. Detailed technical reasons are advanced to support this view.

  20. 掺硼金刚石膜/碳膜平面式复合电极的制备及电化学性能%Electrochemical performance and preparation of composite planar electrode based on boron doped diamond film/carbon film

    Institute of Scientific and Technical Information of China (English)

    练发东; 芶立

    2014-01-01

    采用微波等离子体化学气相沉积法在本征硅上制备掺硼金刚石膜/碳膜平面式复合电极,其中硅片的一面为掺硼金刚石膜,另一面为碳膜。通过SEM和拉曼光谱分析了薄膜的表面形貌和成分,掺硼金刚石膜为纳米级金刚石,碳膜表面有均匀分布的凹坑;利用四探针、循环伏安法和交流阻抗法表征电极导电性和电化学性能,随着沉积时间增加,电极方阻减小;在铁氰化钾溶液中电极发生准可逆氧化还原反应,电势差为119mV,在103 Hz附近阻抗为113Ω;多巴胺的检测限为5μmol·L-1。%Boron doped diamond/carbon composite film electrode of planar configuration was prepared on the intrinsic silicon by mi-crowave plasma chemical vapor deposition. Boron doped diamond ( BDD ) film was deposited on the silicon substrate while carbon film was on the backside of the substrates. The surface morphology and composition of these films was studied by SEM and Raman spectroscopy. The SEM and Raman results show that the BDD films is nanocrystalline and there are many pits on the surface of car-bon films. The conductivity and electrochemical properties of these films were characterized by four-probe? measurement,cyclic vol-tammetry and impedance spectroscopy. The results reveal that the surface square resistance of the samples decreases with the in-crease of the depositing time. Electrochemical reaction is a quasi-reversible reaction in potassium ferricyanide solution with the po-tential difference of 119mv. The impedance of the samples at the frequency about 1000 Hz is 113Ω. The minimum detection limit of dopamine is 5μmol·L-1 .

  1. Electrolyte influence on the Cu nanoparticles electrodeposition onto boron doped diamond electrode; Influencia do eletrolito na eletrodeposicao de nanoparticulas de Cu sobre eletrodo de diamante dopado com boro

    Energy Technology Data Exchange (ETDEWEB)

    Matsushima, Jorge Tadao; Santos, Laura Camila Diniz; Couto, Andrea Boldarini; Baldan, Mauricio Ribeiro; Ferreira, Neidenei Gomes [Instituto Nacional de Pesquisas Espaciais (INPE), Sao Jose dos Campos, SP (Brazil)

    2012-07-01

    This paper presents the electrolyte influence on deposition and dissolution processes of Cu nanoparticles on boron doped diamond electrodes (DDB). Morphological, structural and electrochemical analysis showed BDD films with good reproducibility, quality and reversible in a specific redox system. Electrodeposition of Cu nanoparticles on DDB electrodes in three different solutions was influenced by pH and ionic strength of the electrolytic medium. Analyzing the process as function of the scan rate, it was verified a better efficiency in 0,5 mol L{sup -1} Na{sub 2}SO{sub 4} solution. Under the influence of the pH and ionic strength, Cu nanoparticles on DDB may be obtained with different morphologies and it was important for defining the desired properties. (author)

  2. Fabrication of boron-doped carbon fibers by the decomposition of B4C and its excellent rate performance as an anode material for lithium-ion batteries

    Science.gov (United States)

    Wang, Huiqi; Ma, Canliang; Yang, Xueteng; Han, Tao; Tao, Zechao; Song, Yan; Liu, Zhanjun; Guo, Quangui; Liu, Lang

    2015-03-01

    A facile route, for the first time, was developed to fabricate boron-doped carbon fibers (BDCFs). Boron was doped into mesosphere pitch-based carbon fibers (CFs) by exposing the CFs in a vapor of boron by the decomposition of boron carbide. The microstructure of BDCFs was characterized by SEM, TEM, XRD and Raman spectroscopy. When used as anode materials for the lithium-ion batteries, BDCFs electrode exhibits an improved performance. Concretely, the specific capacity of BDCFs still had a value of over 400 mAh g-1 after 100 cycles. Moreover, BDCFs exhibits better rate capability and less hysteresis in comparison to the pristine CFs. Such enhanced lithium storage capability can be attributed to the improvement of graphitization properties and the high amount of defects induced by boron.

  3. Pulsed Amperometry for Anti-fouling of Boron-doped Diamond in Electroanalysis of β-Agonists: Application to Flow Injection for Pharmaceutical Analysis

    Directory of Open Access Journals (Sweden)

    Duangjai Nacapricha

    2006-01-01

    Full Text Available This work presents the construction and application of boron-doped diamond(BDD thin film electrode as sensor for the determination of three β-agonists, viz.salbutamol, terbutaline and clenbuterol. Although well-known as a chemically inertmaterial, BDD film however shows fouling in detection of these compounds using fixedpotentialmode amperometry. A suitable waveform for pulsed amperometric detection(PAD was developed and used to determine the agonist compounds. It was seen that thedeveloped PAD significantly refreshed the BDD surface for long-term detection in flowinjection analysis. Linear working ranges were 0.5-100 μM, 1.0-100 μM and 0.5-50 μM forsalbutamol, terbutaline and clenbuterol, respectively. The developed PAD-BDD system wasapplied to successfully determine salbutamol and terbutaline in commercial pharmaceuticalproducts. The methods were validated with a capillary electrophoresis method.

  4. Investigation of a Cu/Pd Bimetallic System Electrodeposited on Boron-Doped Diamond Films for Application in Electrocatalytic Reduction of Nitrate

    Directory of Open Access Journals (Sweden)

    Jorge T. Matsushima

    2012-01-01

    Full Text Available The Cu/Pd bimetallic system electrodeposited on boron-doped diamond (BDD films for application, as electrode material in the electrochemical reduction of nitrate was studied. The electrochemical behavior of Cu, Pd, and Cu/Pd bimetallic system was evaluated by cyclic voltammetry. From these results, the formation of the Cu/Pd composite was verified. In addition, Cu with different phases and a Cu/Pd phase in the composite were obtained. Morphological analysis by scanning electron microscopy (SEM revealed a homogeneous distribution of Cu/Pd bimetallic particles with intermediary dimensions compared to those observed in Cu or Pd electrodeposits separately. These composites were tested as electrocatalysts for nitrate reduction in Britton-Robinson buffer solution (pH 9. Electrochemical measurements showed that composites with higher Cu content displayed the best electrocatalytic activity for nitrate reduction, and the Cu/Pd phase in the bimetallic system served to improve the Cu adherence on BDD electrode.

  5. Large-amplitude Fourier transformed high-harmonic alternating current cyclic voltammetry: kinetic discrimination of interfering Faradaic processes at glassy carbon and at boron-doped diamond electrodes.

    Science.gov (United States)

    Zhang, Jie; Guo, Si-Xuan; Bond, Alan M; Marken, Frank

    2004-07-01

    Significant advantages of Fourier transformed large-amplitude ac higher (second to eighth) harmonics relative to responses obtained with conventional small-amplitude ac or dc cyclic voltammetric methods have been demonstrated with respect to (i) the suppression of capacitive background currents, (ii) the separation of the reversible reduction of [Ru(NH(3))(6)](3+) from the overlapping irreversible oxygen reduction process under conditions where aerobic oxygen remains present in the electrochemical cell, and (iii) the kinetic resolution of the reversible [Ru(NH(3))(6)](3+/2+) process in mixtures of [Fe(CN)(6)](3-) and [Ru(NH(3))(6)](3+) at appropriately treated boron-doped diamond electrodes, even when highly unfavorable [Fe(CN)(6)](3-) to [Ru(NH(3))(6)](3+) concentration ratios are employed. Theoretical support for the basis of kinetic discrimination in large-amplitude higher harmonic ac cyclic voltammetry is provided.

  6. Sono-cathodic stripping voltammetry of manganese at a polished boron-doped diamond electrode: application to the determination of manganese in instant tea.

    Science.gov (United States)

    Saterlay, A J; Foord, J S; Compton, R G

    1999-12-01

    Ultrasonically assisted cathodic stripping voltammetry at a boron-doped diamond electrode was developed for the detection of manganese. Differential-pulse voltammetry was used to give the analytical signal from a cathodic strip of electrodeposited MnO2; linearity was observed from 10(-11) M to at least 3 x 10(-7) M, with 10(-11) M being the detection limit for a 2 min deposition. The procedure involves both ultrasonic-anodic deposition of MnO2 and ultrasonic-cathodic stripping. This novel analytical tool is robust, reproducible, mercury free, oxygen insensitive and highly specific towards manganese. The differential-pulse sono-cathodic stripping voltammetric technique was used to determine successfully the manganese content of two instant tea samples, giving excellent agreement with independent AAS analyses.

  7. A simple square-wave voltammetric method for the determination of scopolamine in pharmaceuticals using a boron-doped diamond electrode

    Directory of Open Access Journals (Sweden)

    Simone Birkheur Santos

    2014-01-01

    Full Text Available A simple procedure is described for the determination of scopolamine by square-wave voltammetry using a cathodically pretreated boron-doped diamond electrode. Cyclic voltammetry studies indicate that the oxidation of scopolamine is irreversible at a peak potential of 1.59 V (vs. Ag/AgCl (3.0 mol L-1 KCl in a 0.50 mol L-1 sulfuric acid solution. Under optimized conditions, the analytical curve obtained was linear (r = 0.9996 for the scopolamine concentration range of 1.0 to 110 µmol L-1, with a detection limit of 0.84 µmol L-1. The method was successfully applied to the determination of scopolamine in pharmaceutical formulations with minimum sample preparation.

  8. Electroanalysis of sulfonamides by flow injection system/high-performance liquid chromatography coupled with amperometric detection using boron-doped diamond electrode.

    Science.gov (United States)

    Preechaworapun, Anchana; Chuanuwatanakul, Suchada; Einaga, Yasuaki; Grudpan, Kate; Motomizu, Shoji; Chailapakul, Orawon

    2006-02-28

    Sulfonamides (SAs) were electrochemically investigated using cyclic voltammetry at a boron-doped diamond (BDD) electrode. Comparison experiments were carried out using a glassy carbon electrode. The BDD electrode provided well-resolved oxidation, irreversible cyclic voltammograms and higher current signals when compared to the glassy carbon electrode. Results obtained from using the BDD electrode in a flow injection system coupled with amperometric detection were illustrated. The optimum potential from a hydrodynamic voltammogram was found to be 1100mV versus Ag/AgCl, which was chosen for the HPLC-amperometric system. Excellent results of linear range and detection limit were obtained. This method was also used for determination of sulfonamides in egg samples. The standard solutions of 5, 10, and 15ppm were spiked in a real sample, and percentage of recoveries was found to be between 90.0 and 107.7.

  9. Identification of photoluminescence P line in indium doped silicon as InSi-Sii defect

    Directory of Open Access Journals (Sweden)

    Kevin Lauer

    2015-01-01

    Full Text Available Indium and carbon co-implanted silicon was investigated by low-temperature photoluminescence spectroscopy. A photoluminescence peak in indium doped silicon (P line was found to depend on the position of a silicon interstitial rich region, the existence of a SiNx:H/SiOx stack and on characteristic illumination and annealing steps. These results led to the conclusion that silicon interstitials are involved in the defect and that hydrogen impacts the defect responsible for the P line. By applying an unique illumination and annealing cycle we were able to link the P line defect with a defect responsible for degradation of charge carrier lifetime in indium as well as boron doped silicon. We deduced a defect model consisting of one acceptor and one silicon interstitial atom denoted by ASi-Sii, which is able to explain the experimental data of the P line as well as the light-induced degradation in indium and boron doped silicon. Using this model we identified the defect responsible for the P line as InSi-Sii in neutral charge state and C2v configuration.

  10. Determination of Vickers microhardness on porous silicon surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Masis, M. [Department of Physics, Wright State University, Dayton OH 45435 (United States); Ramirez-Porras, A. [Centro de Investigacion en Ciencia e Ingenieria de Materiales (CICIMA) and Escuela de Fisica, Universidad de Costa Rica, San Pedro de Montes de Oca 2060 (Costa Rica)], E-mail: aramirez@fisica.ucr.ac.cr

    2008-02-29

    The Vickers microhardness values of two different sets of porous silicon layers were determined at applied load of 98 mN. The sets consisted of Boron-doped substrates anodized at diverse current densities for two different amounts of hydrofluoric acid (HF) in the etching solution. We found that the microhardness of the samples with lower content of HF at the anodization process showed higher values, whereas the Vickers parameter diminishes consistently for higher current densities. A possible explanation of this behavior is proposed.

  11. 直流电弧等离子体喷射CVD硼掺杂金刚石薄膜的制备及电化学性能研究%Electrochemical Properties of Boron Doped Diamond Films Prepared by DC Arc Plasma Jet CVD

    Institute of Scientific and Technical Information of China (English)

    张聪聪; 戴玮; 朱宁; 尹振超; 吴小国; 曲长庆

    2012-01-01

    Boron doped diamond films on silicon ( BDD) substrates were deposited by DC ARC Plasma Jet CVD (Chemical Vapor Deposition) , SEM, XRD and Raman spectroscopy were employed to analyze the morphology, crystal structure and film quality. The SEM and XRD show jointly that the samples are high-quality polycrystalline diamond films composed of micro meter-sized grains. The Raman spectrum show the 1126 cm-1,1336 cm -1and 1560 cm-1, respectively corresponds to peak due to boron incorporation, sp3 carbon peak ,and sp2 carbon peak. Study the effects of pressure and (100) BDD films were deposited at the pressure of 5500 Pa. The resistivity and carrier concentration of the (111) films measured by the Hall system, respectively corresponds to 0. 0095 Ω · cm and 1. 1 × 1020 cm-3. The electrochemical behaviors of the boron-doped diamond film electrode in sodium sulfate solution, potassium ferrocyanide/ potassium ferricyanide solution and dopamine solution are studied. The results show that the' diamond film electrode have a wide electrochemical window of about 4 V and a low background current close to zero in the aqua solution, meanwhile they have a high sensitivity, good stability and reversibility in the dopamine detection experiment which makes boron-doped diamond film obtained by DC ARC Plasma Jet CVD being an excellent material of electrochemical electrode.%采用直流电弧等离子体喷射CVD(Chemical Vapor Deposition)法在硅(100)衬底上制备了(111)占优的掺硼金刚石(BDD)薄膜,研究了压强对薄膜生长的影响,在压强为5500Pa时得到了(100)占优的金刚石薄膜,并用SEM、XRD及拉曼光谱分析了薄膜的表面形貌、晶体结构、薄膜品质.测试结果表明,掺硼金刚石膜具有较好的成膜质量.霍尔测试表明BDD的电阻率为0.0095Ω·cm,载流子浓度为1.1×1020 cm-3;研究了BDD薄膜电极在硫酸钠空白底液、铁氰化钾/亚铁氰化钾溶液和多巴胺溶液中的循环伏安曲线(CVs),发现该金刚

  12. Thermally Assisted Tunneling of the B-H Complex in Silicon

    Science.gov (United States)

    Noya, José C.; Herrero, Carlos P.; Ramírez, Rafael

    1997-07-01

    Jump rate constants of atomic hydrogen and deuterium in boron-doped crystalline silicon are calculated using quantum transition-state theory, based on the path-integral centroid formalism. A break in the slope of the Arrhenius plot for the jump rate of hydrogen is obtained at T~60 K, indicating a crossover from thermally activated quasiclassical motion over a barrier to thermally assisted quantum tunneling, in good agreement with previous experimental results. For deuterium, no deviation from an Arrhenius law is found down to 30 K. It is shown that the defect complex undergoing quantum tunneling consists of hydrogen, boron, and the nearest silicon atoms.

  13. Participation of oxygen and carbon in formation of oxidation-induced stacking faults in monocrystalline silicon

    Directory of Open Access Journals (Sweden)

    Иван Федорович Червоный

    2015-11-01

    Full Text Available It is experimentally established, that density of oxidation-induced stacking faults (OISF in the boron doped monocrystalline silicon plates, that above, than it is more relation of oxygen atoms concentration to carbon atoms concentration in them.On research results of geometry of OISF rings in the different sections of single-crystal geometry of areas is reconstructed with their different closeness. At adjustment of the growing modes of single-crystals of silicon the increase of output of suitable product is observed

  14. Boron-doped hydrogenated microcrystalline silicon oxide (μc-SiOx:H) for application in thin-film silicon solar cells

    NARCIS (Netherlands)

    Lambertz, A.; Finger, F.; Holländer, B.; Rath, J.K.; Schropp, R.E.I.

    2011-01-01

    We report on the development of p-type μc-SiOx:H material, in particular the relationship between the deposition parameters and the material properties like band gap, electrical conductivity, and crystalline volume fraction. The material was deposited from gas mixtures of silane, carbon dioxide and

  15. Structures of Pt clusters on graphene doped with nitrogen, boron, and silicon: a theoretical study

    Institute of Scientific and Technical Information of China (English)

    Dai Xian-Qi; Tang Ya-Nan; Dai Ya-Wei; Li Yan-Hui; Zhao Jian-Hua; Zhao Bao; Yang Zong-Xian

    2011-01-01

    The structures of Pt clusters on nitrogen-, boron-, silicon- doped graphenes are theoretically studied using densityfunctional theory. These dopants (nitrogen, boron and silicon) each do not induce a local curvature in the graphene and the doped graphenes all retain their planar form. The formation energy of the silicon-graphene system is lower than those of the nitrogen-, boron-doped graphenes, indicating that the silicon atom is easier to incorporate into the graphene.All the substitutional impurities enhance the interaction between the Pt atom and the graphene. The adsorption energy of a Pt adsorbed on the silicon-doped graphene is much higher than those on the nitrogen- and boron-doped graphenes.The doped silicon atom can provide more charges to enhance the Pt-graphene interaction and the formation of Pt clusters each with a large size. The stable structures of Pt clusters on the doped-graphenes are dimeric, triangle and tetrahedron with the increase of the Pt coverage. Of all the studied structures, the tetrahedron is the most stable cluster which has the least influence on the planar surface of doped-graphene.

  16. Identification of photoluminescence P line in indium doped silicon as In{sub Si}-Si{sub i} defect

    Energy Technology Data Exchange (ETDEWEB)

    Lauer, Kevin, E-mail: klauer@cismst.de; Möller, Christian [CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt (Germany); Schulze, Dirk [TU Ilmenau, Institut für Physik, Weimarer Str. 32, 98693 Ilmenau (Germany); Ahrens, Carsten [Infineon Technologies AG, Am Campeon 1-12, 85579 Neubiberg (Germany)

    2015-01-15

    Indium and carbon co-implanted silicon was investigated by low-temperature photoluminescence spectroscopy. A photoluminescence peak in indium doped silicon (P line) was found to depend on the position of a silicon interstitial rich region, the existence of a SiN{sub x}:H/SiO{sub x} stack and on characteristic illumination and annealing steps. These results led to the conclusion that silicon interstitials are involved in the defect and that hydrogen impacts the defect responsible for the P line. By applying an unique illumination and annealing cycle we were able to link the P line defect with a defect responsible for degradation of charge carrier lifetime in indium as well as boron doped silicon. We deduced a defect model consisting of one acceptor and one silicon interstitial atom denoted by A{sub Si}-Si{sub i}, which is able to explain the experimental data of the P line as well as the light-induced degradation in indium and boron doped silicon. Using this model we identified the defect responsible for the P line as In{sub Si}-Si{sub i} in neutral charge state and C{sub 2v} configuration.

  17. Direct electrochemistry of Shewanella loihica PV-4 on gold nanoparticles-modified boron-doped diamond electrodes fabricated by layer-by-layer technique.

    Science.gov (United States)

    Wu, Wenguo; Xie, Ronggang; Bai, Linling; Tang, Zuming; Gu, Zhongze

    2012-05-01

    Microbial Fuel Cells (MFCs) are robust devices capable of taping biological energy, converting pollutants into electricity through renewable biomass. The fabrication of nanostructured electrodes with good bio- and electrochemical activity, play a profound role in promoting power generation of MFCs. Au nanoparticles (AuNPs)-modified Boron-Doped Diamond (BDD) electrodes are fabricated by layer-by-layer (LBL) self-assembly technique and used for the direct electrochemistry of Shewanella loihica PV-4 in an electrochemical cell. Experimental results show that the peak current densities generated on the Au/PAH multilayer-modified BDD electrodes increased from 1.25 to 2.93 microA/cm(-2) as the layer increased from 0 to 6. Different cell morphologies of S. loihica PV-4 were also observed on the electrodes and the highest density of cells was attached on the (Au/PAH)6/BDD electrode with well-formed three-dimensional nanostructure. The electrochemistry of S. loihica PV-4 was enhanced on the (Au/PAH)4/BDD electrode due to the appropriate amount of AuNPsand thickness of PAH layer.

  18. Study of degradation intermediates formed during electrochemical oxidation of pesticide residue 2,6-dichlorobenzamide (BAM) at boron doped diamond (BDD) and platinum-iridium anodes.

    Science.gov (United States)

    Madsen, Henrik Tækker; Søgaard, Erik Gydesen; Muff, Jens

    2014-08-01

    Electrochemical oxidation is a promising technique for degradation of otherwise recalcitrant organic micropollutants in waters. In this study, the applicability of electrochemical oxidation was investigated concerning the degradation of the groundwater pollutant 2,6-dichlorobenzamide (BAM) through the electrochemical oxygen transfer process with two anode materials: Ti/Pt90-Ir10 and boron doped diamond (Si/BDD). Besides the efficiency of the degradation of the main pollutant, it is also of outmost importance to control the formation and fate of stable degradation intermediates. These were investigated quantitatively with HPLC-MS and TOC measurements and qualitatively with a combined HPLC-UV and HPLC-MS protocol. 2,6-Dichlorobenzamide was found to be degraded most efficiently by the BDD cell, which also resulted in significantly lower amounts of intermediates formed during the process. The anodic degradation pathway was found to occur via substitution of hydroxyl groups until ring cleavage leading to carboxylic acids. For the BDD cell, there was a parallel cathodic degradation pathway that occurred via dechlorination. The combination of TOC with the combined HPLC-UV/MS was found to be a powerful method for determining the amount and nature of degradation intermediates. Copyright © 2014 Elsevier Ltd. All rights reserved.

  19. Enhancing the electrochemical oxidation of acid-yellow 36 azo dye using boron-doped diamond electrodes by addition of ferrous ion

    Energy Technology Data Exchange (ETDEWEB)

    Villanueva-Rodriguez, M.; Hernandez-Ramirez, A. [Universidad Autonoma de Nuevo Leon, Facultad de Ciencias Quimicas, Av. Universidad s/n, Cd. Universitaria, San Nicolas de los Garza, NL. 66400 (Mexico); Peralta-Hernandez, J.M., E-mail: jperalta@fcq.uanl.mx [Universidad Autonoma de Nuevo Leon, Facultad de Ciencias Quimicas, Av. Universidad s/n, Cd. Universitaria, San Nicolas de los Garza, NL. 66400 (Mexico); Bandala, Erick R.; Quiroz-Alfaro, Marco A. [Universidad de Las Americas - Puebla, Escuela de Ingenieria y Ciencias, Sta. Catarina Martir - Cholula, Puebla 72820 (Mexico)

    2009-08-15

    This work shows preliminary results on the electrochemical oxidation process (EOP) using boron-doped diamond (BDD) electrode for acidic yellow 36 oxidation, a common azo dye used in textile industry. The study is centred in the synergetic effect of ferrous ions and hydroxyl free radicals for improving discoloration of azo dye. The assays were carried out in a typical glass cell under potentiostatic conditions. On experimental conditions, the EOP was able to partially remove the dye from the reaction mixture. The reaction rate increased significantly by addition of Fe{sup 2+} (1 mM as ferrous sulphate) to the system and by (assumed) generation of ferrate ion [Fe(VI)] over BDD electrode. Ferrate is considered as a highly oxidizing reagent capable of removing the colorant from the reaction mixture, in synergistic action with the hydroxyl radicals produced on the BDD surface. Further increases in the Fe{sup 2+} concentration lead to depletion of the reaction rate probably due to the hydroxyl radical scavenging effect of Fe{sup 2+} excess in the system.

  20. Electrochemical Imprinted Polycrystalline Nickel-Nickel Oxide Half-Nanotube-Modified Boron-Doped Diamond Electrode for the Detection of L-Serine.

    Science.gov (United States)

    Dai, Wei; Li, Hongji; Li, Mingji; Li, Cuiping; Wu, Xiaoguo; Yang, Baohe

    2015-10-21

    This paper presents a novel and versatile method for the fabrication of half nanotubes (HNTs) using a flexible template-based nanofabrication method denoted as electrochemical imprinting. With use of this method, polycrystalline nickel and nickel(II) oxide (Ni-NiO) HNTs were synthesized using pulsed electrodeposition to transfer Ni, deposited by radio frequency magnetron sputtering on a porous polytetrafluoroethylene template, onto a boron-doped diamond (BDD) film. The Ni-NiO HNTs exhibited semicircular profiles along their entire lengths, with outer diameters of 50-120 nm and inner diameters of 20-50 nm. The HNT walls were formed of Ni and NiO nanoparticles. A biosensor for the detection of L-serine was fabricated using a BDD electrode modified with Ni-NiO HNTs, and the device demonstrated satisfactory analytical performance with high sensitivity (0.33 μA μM(-1)) and a low limit of detection (0.1 μM). The biosensor also exhibited very good reproducibility and stability, as well as a high anti-interference ability against amino acids such as L-leucine, L-tryptophan, L-cysteine, L-phenylalanine, L-arginine, and L-lysine.

  1. A sandwich structured SiO(2)/cytochrome c/SiO(2) on a boron-doped diamond film electrode as an electrochemical nitrite biosensor.

    Science.gov (United States)

    Geng, Rong; Zhao, Guohua; Liu, Meichuan; Li, Mingfang

    2008-06-01

    A novel sandwich structured SiO(2) gel/cytochrome c (Cyt c)/SiO(2) gel was designed and constructed on conductive boron-doped diamond (BDD) film substrate. A SiO(2) gel membrane was first in situ deposited on the pretreated positive charged H-terminated BDD electrode with a simple and artful surface vapor sol-gel method. Cyt c was subsequently immobilized onto the SiO(2) membranes by electrostatic attraction, followed by another SiO(2) gel layer in situ depositing on it. The SiO(2) interlayer was conceived to play an important role in the resultant sandwich structured SiO(2)/Cyt c/SiO(2)/BDD electrode as a selective "semi-open" medium, which guaranteed the immobilized Cyt c to maintain high stability and perform good electrochemistry and biocatalysis responses. The bioactivity of Cyt c was well protected and the immobilized biomolecule even didn't denature at extremely high or low pH condition. More attractively, Cyt c in the sandwich structured electrode could be further oxidized into highly reactive Cyt c pi-cation by two-step electrochemical oxidation, which could oxidize NO(2)(-) into NO(3)(-) in the solution. A sensitive determination approach of nitrite was accordingly built up based on this biocatalytic oxidative interaction for the first time and a possible mechanism of the interaction was herein proposed.

  2. Investigation of the synergistic effects for p-nitrophenol mineralization by a combined process of ozonation and electrolysis using a boron-doped diamond anode.

    Science.gov (United States)

    Qiu, Cuicui; Yuan, Shi; Li, Xiang; Wang, Huijiao; Bakheet, Belal; Komarneni, Sridhar; Wang, Yujue

    2014-09-15

    Electrolysis and ozonation are two commonly used technologies for treating wastewaters contaminated with nitrophenol pollutants. However, they are often handicapped by their slow kinetics and low yields of total organic carbon (TOC) mineralization. To improve TOC mineralization efficiency, we combined electrolysis using a boron-doped diamond (BDD) anode with ozonation (electrolysis-O3) to treat a p-nitrophenol (PNP) aqueous solution. Up to 91% TOC was removed after 60 min of the electrolysis-O3 process. In comparison, only 20 and 44% TOC was respectively removed by individual electrolysis and ozonation treatment conducted under similar reaction conditions. The result indicates that when electrolysis and ozonation are applied simultaneously, they have a significant synergy for PNP mineralization. This synergy can be mainly attributed to (i) the rapid degradation of PNP to carboxylic acids (e.g., oxalic acid and acetic acid) by O3, which would otherwise take a much longer time by electrolysis alone, and (ii) the effective mineralization of the ozone-refractory carboxylic acids to CO2 by OH generated from multiple sources in the electrolysis-O3 system. The result suggests that combining electrolysis with ozonation can provide a simple and effective way to mutually compensate the limitations of the two processes for degradation of phenolic pollutants.

  3. Assessment of Boron Doped Diamond Electrode Quality and Application to In Situ Modification of Local pH by Water Electrolysis.

    Science.gov (United States)

    Read, Tania L; Macpherson, Julie V

    2016-01-06

    Boron doped diamond (BDD) electrodes have shown considerable promise as an electrode material where many of their reported properties such as extended solvent window, low background currents, corrosion resistance, etc., arise from the catalytically inert nature of the surface. However, if during the growth process, non-diamond-carbon (NDC) becomes incorporated into the electrode matrix, the electrochemical properties will change as the surface becomes more catalytically active. As such it is important that the electrochemist is aware of the quality and resulting key electrochemical properties of the BDD electrode prior to use. This paper describes a series of characterization steps, including Raman microscopy, capacitance, solvent window and redox electrochemistry, to ascertain whether the BDD electrode contains negligible NDC i.e. negligible sp(2) carbon. One application is highlighted which takes advantage of the catalytically inert and corrosion resistant nature of an NDC-free surface i.e. stable and quantifiable local proton and hydroxide production due to water electrolysis at a BDD electrode. An approach to measuring the local pH change induced by water electrolysis using iridium oxide coated BDD electrodes is also described in detail.

  4. Molecular Signature of Pseudomonas aeruginosa with Simultaneous Nanomolar Detection of Quorum Sensing Signaling Molecules at a Boron-Doped Diamond Electrode

    Science.gov (United States)

    Buzid, Alyah; Shang, Fengjun; Reen, F. Jerry; Muimhneacháin, Eoin Ó.; Clarke, Sarah L.; Zhou, Lin; Luong, John H. T.; O’Gara, Fergal; McGlacken, Gerard P.; Glennon, Jeremy D.

    2016-07-01

    Electroanalysis was performed using a boron-doped diamond (BDD) electrode for the simultaneous detection of 2-heptyl-3-hydroxy-4-quinolone (PQS), 2-heptyl-4-hydroxyquinoline (HHQ) and pyocyanin (PYO). PQS and its precursor HHQ are two important signal molecules produced by Pseudomonas aeruginosa, while PYO is a redox active toxin involved in virulence and pathogenesis. This Gram-negative and opportunistic human pathogen is associated with a hospital-acquired infection particularly in patients with compromised immunity and is the primary cause of morbidity and mortality in cystic fibrosis (CF) patients. Early detection is crucial in the clinical management of this pathogen, with established infections entering a biofilm lifestyle that is refractory to conventional antibiotic therapies. Herein, a detection procedure was optimized and proven for the simultaneous detection of PYO, HHQ and PQS in standard mixtures, biological samples, and P. aeruginosa spiked CF sputum samples with remarkable sensitivity, down to nanomolar levels. Differential pulse voltammetry (DPV) scans were also applicable for monitoring the production of PYO, HHQ and PQS in P. aeruginosa PA14 over 8 h of cultivation. The simultaneous detection of these three compounds represents a molecular signature specific to this pathogen.

  5. Synthesis of boron-doped diamond and its application as a heating material in a multi-anvil high-pressure apparatus

    Science.gov (United States)

    Xie, Longjian; Yoneda, Akira; Yoshino, Takashi; Yamazaki, Daisuke; Tsujino, Noriyoshi; Higo, Yuji; Tange, Yoshinori; Irifune, Tetsuo; Shimei, Toru; Ito, Eiji

    2017-09-01

    We developed methods to use synthesized boron-doped diamond (BDD) as a heater in a multi-anvil high-pressure apparatus. The synthesized BDD heater could stably generate an ultra-high temperature without the issues (anomalous melt, pressure drop, and instability of heating) arising from oxidation of boron into boron oxide and graphite-diamond conversion. We synthesized BDD blocks and tubes with boron contents of 0.5-3.0 wt. % from a mixture of graphite and amorphous boron at 15 GPa and 2000 °C. The electrical conductivity of BDD increased with increasing boron content. The stability of the heater and heating reproducibility were confirmed through repeated cycles of heating and cooling. Temperatures as high as ˜3700 °C were successfully generated at higher than 10 GPa using the BDD heater. The effect of the BDD heater on the pressure-generation efficiency was evaluated using MgO pressure scale by in situ X-ray diffraction study at the SPring-8 synchrotron. The pressure-generation efficiency was lower than that using a graphite-boron composite heater up to 1500 tons. The achievement of stable temperature generation above 3000 °C enables melting experiments of silicates and determination of some physical properties (such as viscosity) of silicate melts under the Earth's lower mantle conditions.

  6. A flow injection method for the analysis of tetracycline antibiotics in pharmaceutical formulations using electrochemical detection at anodized boron-doped diamond thin film electrode.

    Science.gov (United States)

    Wangfuengkanagul, N; Siangproh, W; Chailapakul, O

    2004-12-15

    A method using flow injection (FI) with amperometric detection at anodized boron-doped diamond (BDD) thin films has been developed and applied for the determination of tetracycline antibiotics (tetracycline, chlortetracycline, oxytetracycline and doxycycline). The electrochemical oxidation of the tetracycline antibiotics was studied at various carbon electrodes including glassy carbon (GC), as-deposited BDD and anodized BDD electrodes using cyclic voltammetry. The anodized BDD electrode exhibited well-defined irreversible cyclic voltammograms for the oxidation of tetracycline antibiotics with the highest current signals compared to the as-deposited BDD and glassy carbon electrodes. Low detection limit of 10nM (signal-to-noise ratio = 3) was achieved for each drug when using flow injection analysis with amperometric detection at anodized BDD electrodes. Linear calibrations were obtained from 0.1 to 50mM for tetracycline and 0.5-50mM for chlortetracycline, oxytetracycline and doxycycline. The proposed method has been successfully applied to determine the tetracycline antibiotics in some drug formulations. The results obtained in percent found (99.50-103.01%) were comparable to dose labeled.

  7. Electrochemical disinfection of biologically treated wastewater from small treatment systems by using boron-doped diamond (BDD) electrodes--contribution for direct reuse of domestic wastewater.

    Science.gov (United States)

    Schmalz, Viktor; Dittmar, Thomas; Haaken, Daniela; Worch, Eckhard

    2009-12-01

    The aim of the study was to demonstrate the application potential of boron-doped diamond electrodes (BDD) in electrochemical disinfection of biologically treated sewage for direct recycling of domestic wastewater. Discontinuous bulk disinfection experiments with secondary effluents and model solutions were performed to investigate the influence of operating conditions and wastewater parameters on disinfection efficiency and formation of disinfection by-products (adsorbable organically bound halogens, AOX). The inactivation rate accelerates with increasing current density caused by a faster generation of electrochemical oxidants (ECO). It could be shown that the effect of OH radicals in case of the direct electrochemical disinfection of chloride-containing secondary effluents with BDD is negligible because of their fast reaction with typical radical scavengers. The dominating role of electrochemically generated free chlorine in the disinfection process could be explicitly verified. It could be also shown that the disinfection efficiency is strongly affected by the specific wastewater parameters temperature and pH. These effects can be explained by the behaviour of the reactive species. The migration-controlled generation of ECO can be accelerated under turbulent hydrodynamic conditions. The formation of disinfection by-products (AOX) correlates with the introduced electric charge Q applied per volume and is independent of the applied current density.

  8. Delimiting the boron influence on the adsorptive properties of water and rad OH radicals on H-terminated Boron Doped Diamond catalysts: A Density Functional Theory analysis

    Science.gov (United States)

    Jaimes, Raciel; Vazquez-Arenas, Jorge; González, Ignacio; Galván, Marcelo

    2016-11-01

    Motivated for the success of Boron Doped Diamond (BDD) in electrocatalysis, where water and hydroxyl radical interactions play an overriding role on surface reactivity, this study presents a Density Functional Theory (DFT) analysis intended to correlate its structure and reactivity. H-terminated periodic surfaces (supercells 5 × 5) with atomic composition of one boron per 150 C atoms are used for these purposes, and where B position was varied in different layers. Analyses of total density of states (TDOS), localization of occupied and unoccupied states near the Fermi level and adsorption energies show that the effect of B doping on surface reactivity decreases as a function of its vertical distance from the BDD surface, and it is restricted to the first three surface layers. The adsorption free energy calculated for a water molecule corroborates the hydrophobic nature of these surfaces, becoming more repulsive as B is located within the first three surface layers. In contrast, the free energy computed for hydroxyl radical is always exergonic. Hydrogen abstraction by hydroxyl radical is an energy-enabled process for all surface hydrogens, regardless if they are bonded to C or B atoms, becoming more energetic when hydrogen is directly bonded to B or its nearest neighbor carbon, while other abstractions present very similar adsorption energies than in the absence of boron.

  9. Electrochemical treatment of phenolic waters in presence of chloride with boron-doped diamond (BDD) anodes: experimental study and mathematical model.

    Science.gov (United States)

    Mascia, Michele; Vacca, Annalisa; Polcaro, Anna Maria; Palmas, Simonetta; Ruiz, Jesus Rodriguez; Da Pozzo, Anna

    2010-02-15

    This work deals with an experimental and numerical study on the electrochemical treatment of waters containing phenolic compounds with boron-doped diamond (BDD) anodes. Anodic oxidation of m-cresol, as a model of phenolic compound, was investigated by galvanostatic electrolyses. The electrolyses were carried out under different experimental conditions by using an impinging-jet flow cell inserted in a hydraulic circuit in a closed loop. On the basis of the experimental results a mathematical model was implemented to simulate the effect of the chemistry of organic compounds and solution on the process, in particular the effect of chlorides on the kinetics of m-cresol oxidation. The effect of hydrodynamics of the cell on the mass transfer towards the electrode surface was also considered. The model was validated through comparison with experimental data: the results showed that the proposed model well interpreted the complex effect on removal efficiency of such operative parameters as current density, hydrodynamic of the reactor and chemistry of the solution. The model predictions were utilised to obtain quantitative information on the reaction mechanism, as well as to predict the performance of the process under different operative conditions, by calculating some relevant figures of merit.

  10. Electrochemical determination of resveratrol in dietary supplements at a boron-doped diamond electrode in the presence of hexadecyltrimethylammonium bromide using square-wave adsorptive stripping voltammetry

    Directory of Open Access Journals (Sweden)

    Yardim Yavuz

    2017-01-01

    Full Text Available A sensitive electroanalytical methodology for the determination of resveratrol is presented for the first time using adsorptive stripping voltammetry at a bare boron-doped diamond (BDD electrode. In cyclic voltammetry, resveratrol shows one irreversible and an adsorption-controlled oxidation peak at a BDD electrode. The voltammetric results indicated that in the presence of hexadecyl trimethyl ammonium bromide, the BDD electrode remarkably enhanced the oxidation of resveratrol, which leads to an improvement in the peak current with a shift of the peak potential to more positive values. Using the square-wave stripping mode, the compound yielded a well-defined voltammetric response in 0.1 M nitric acid solution containing 100 μmol L-1 hexadecyl trimethyl ammonium bromide at 0.74 V (vs. Ag/AgCl, after 60 s accumulation at the open-circuit condition. A linear calibration graph was obtained in the concentration range 0.025 to 60.0 μg mL-1, with a detection limit of 0.0063 μg mL-1. The applicability of the proposed method was verified by analysis of resveratrol in commercial dietary supplements.

  11. A Brief Review on Environmental Application of Boron Doped Diamond Electrodes as a New Way for Electrochemical Incineration of Synthetic Dyes

    Directory of Open Access Journals (Sweden)

    J. M. Peralta-Hernández

    2012-01-01

    Full Text Available The present study was stimulated by an authoritative review on decontamination of wastewaters containing synthetic organic dyes by electrochemical methods published in Martínez-Huitle and Brillas (2009. As reviewed by the authors, there have been significant efforts on investigating the decontamination of wastewaters containing synthetic dyes by electrochemical methods, and currently, more studies are being published. A high number of electrodes have been tested in this method, including boron doped diamond (BDD anodes. In this context, many papers have demonstrated that the use of a BDD thin film in electrochemical oxidation provides total mineralization with high current efficiency of different organics in real wastewaters. And this synthetic material deposited on several supports has been recently applied to dyestuff treatment. Although, in the last two years, more reports have been published treating electrochemically synthetic dyes wastewaters using BDD, there are few reports on the use of electrooxidation processes to degrade real textile effluents. The aim of this paper is to summarize and discuss the most important and recent results available in the literature about the application of BDD electrodes for removing azo dyes in synthetic and real wastewaters.

  12. Computational designing ultra-sensitive nano-composite based on boron doped and CuO decorated graphene to adsorb H2S and CO gaseous molecules

    Science.gov (United States)

    Asadi, Hamed; Vaezzadeh, Majid

    2017-07-01

    In this paper, interactions of carbon monoxide (CO) and hydrogen sulfide (H2S) with doped and decorated graphene were investigated by using density functional theory and quantum-espresso packages. First of all, impurity effects and properties like adsorption mechanism, the more probable position, binding energy, bond length, Lowdin charge analyze and density of state (DOS) have been determined and then the properties of CO and H2S adsorption calculated, and a brief comparison with other studies has been done. All of these lead to tuning the electronic structure of graphene sheet with impurities that show higher affinities with H2S and CO molecules in comparison to pristine graphene. The obtained results from DOS and charge transfer show that electrical conductance of the B doped graphene sheet and CuO Nano particle decorated—Boron doped graphene sheets are significantly changed compared to the pristine graphene sheet by an increase in the electronic states of near the Fermi’s energy states.

  13. Molecular Signature of Pseudomonas aeruginosa with Simultaneous Nanomolar Detection of Quorum Sensing Signaling Molecules at a Boron-Doped Diamond Electrode

    Science.gov (United States)

    Buzid, Alyah; Shang, Fengjun; Reen, F. Jerry; Muimhneacháin, Eoin Ó; Clarke, Sarah L.; Zhou, Lin; Luong, John H. T.; O’Gara, Fergal; McGlacken, Gerard P.; Glennon, Jeremy D.

    2016-01-01

    Electroanalysis was performed using a boron-doped diamond (BDD) electrode for the simultaneous detection of 2-heptyl-3-hydroxy-4-quinolone (PQS), 2-heptyl-4-hydroxyquinoline (HHQ) and pyocyanin (PYO). PQS and its precursor HHQ are two important signal molecules produced by Pseudomonas aeruginosa, while PYO is a redox active toxin involved in virulence and pathogenesis. This Gram-negative and opportunistic human pathogen is associated with a hospital-acquired infection particularly in patients with compromised immunity and is the primary cause of morbidity and mortality in cystic fibrosis (CF) patients. Early detection is crucial in the clinical management of this pathogen, with established infections entering a biofilm lifestyle that is refractory to conventional antibiotic therapies. Herein, a detection procedure was optimized and proven for the simultaneous detection of PYO, HHQ and PQS in standard mixtures, biological samples, and P. aeruginosa spiked CF sputum samples with remarkable sensitivity, down to nanomolar levels. Differential pulse voltammetry (DPV) scans were also applicable for monitoring the production of PYO, HHQ and PQS in P. aeruginosa PA14 over 8 h of cultivation. The simultaneous detection of these three compounds represents a molecular signature specific to this pathogen. PMID:27427496

  14. Superconductivity in carrier-doped silicon carbide

    Directory of Open Access Journals (Sweden)

    Takahiro Muranaka, Yoshitake Kikuchi, Taku Yoshizawa, Naoki Shirakawa and Jun Akimitsu

    2008-01-01

    Full Text Available We report growth and characterization of heavily boron-doped 3C-SiC and 6H-SiC and Al-doped 3C-SiC. Both 3C-SiC:B and 6H-SiC:B reveal type-I superconductivity with a critical temperature Tc=1.5 K. On the other hand, Al-doped 3C-SiC (3C-SiC:Al shows type-II superconductivity with Tc=1.4 K. Both SiC:Al and SiC:B exhibit zero resistivity and diamagnetic susceptibility below Tc with effective hole-carrier concentration n higher than 1020 cm−3. We interpret the different superconducting behavior in carrier-doped p-type semiconductors SiC:Al, SiC:B, Si:B and C:B in terms of the different ionization energies of their acceptors.

  15. Highly conducting and preferred oriented boron doped nc-Si films for window layers in nc-Si solar cells

    Science.gov (United States)

    Mondal, Praloy; Das, Debajyoti

    2016-05-01

    Growth and optimization of the boron dopednanocrystalline silicon (nc-Si) films have been studied by varyingthe gaspressure applied to the hydrogendiluted silane plasma in RF (13.56 MHz) plasma-enhanced chemical vapor deposition (PECVD) system, using diborane (B2H6) as the dopant gas. High magnitudeof electrical conductivity (~102 S cm-1) andorientedcrystallographic lattice planes have been obtained with high crystalline volume fraction (~86 %) at an optimum pressure of 2.5 Torr. XRD and Raman studies reveal good crystallinity with preferred orientation, suitable for applications in stacked layer devices, particularly in nc-Si solar cells.

  16. A comparative study of electrochemical oxidation of methidation organophosphorous pesticide on SnO2 and boron-doped diamond anodes.

    Science.gov (United States)

    Hachami, Fatima; Errami, Mohamed; Bazzi, Lahcen; Hilali, Mustapha; Salghi, Rachid; Jodeh, Shehdeh; Hammouti, Belkheir; Hamed, Othman A

    2015-01-01

    Electrochemical oxidation considered to be among the best methods in waste water desalination and removing toxic metals and organic pesticides from wastewater like Methidathion. The objective of this work is to study the electrochemical oxidation of aqueous wastes containing Methidathion using boron doped diamond thin-film electrodes and SnO2, and to determine the calculated partial charge and frontier electron density parameters. Electrolysis parameters such as current density, temperature, supporting electrolyte (NaCl) have been optimized. The influences of the electrode materials on methidathion degradation show that BDD is the best electrode material to oxidize this pesticide organophosphorous. Energetic cost has been determinate for all experiments. The results provide that 2 % of NaCl, 60 mA cm(-2) and 25 ºC like the optimized values to carry out the treatment. For BDD the achieved Chemical Oxidation Demand reduction was about 85 %, while for SnO2 it was about 73 %. The BDD anode appears to be the more promising one for the effective electrochemical treatment of methidathion. Finally the theoretical calculation was done by using the calculation program Gaussian 03W, they are a permit to identify the phenomena engaged near the electrode and to completely determine the structures of the products of electrochemical oxidation formed during the degradation and which they are not quantifiable in experiments because of their high reactivity. The comparison of the results relating to the two electrodes indicates that these materials have a power to reduce the quantity of the organic matter in the electrolyzed solution. But the speed of oxidation of these compounds is different according to the materials of the electrodes used. Graphical abstract:Structural of methidathion [O,O-dimethyl-S-(5-methoxy-1,3,4-thiadiazolinyl-3-methyl) dithiophosphate] used for study the electrochemical oxidation.

  17. Degradation of the beta-blocker propranolol by electrochemical advanced oxidation processes based on Fenton's reaction chemistry using a boron-doped diamond anode

    Energy Technology Data Exchange (ETDEWEB)

    Isarain-Chavez, Eloy; Rodriguez, Rosa Maria; Garrido, Jose Antonio; Arias, Conchita; Centellas, Francesc; Cabot, Pere Lluis [Laboratori d' Electroquimica dels Materials i del Medi Ambient, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain); Brillas, Enric, E-mail: brillas@ub.ed [Laboratori d' Electroquimica dels Materials i del Medi Ambient, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain)

    2010-12-15

    The electro-Fenton (EF) and photoelectro-Fenton (PEF) degradation of solutions of the beta-blocker propranolol hydrochloride with 0.5 mmol dm{sup -3} Fe{sup 2+} at pH 3.0 has been studied using a single cell with a boron-doped diamond (BDD) anode and an air diffusion cathode (ADE) for H{sub 2}O{sub 2} electrogeneration and a combined cell containing the above BDD/ADE pair coupled in parallel to a Pt/carbon felt (CF) cell. This naphthalene derivative can be mineralized by both methods with a BDD anode. Almost overall mineralization is attained for the PEF treatments, more rapidly with the combined system due to the generation of higher amounts of hydroxyl radical from Fenton's reaction by the continuous Fe{sup 2+} regeneration at the CF cathode, accelerating the oxidation of organics to Fe(III)-carboxylate complexes that are more quickly photolyzed by UVA light. The homologous EF processes are less potent giving partial mineralization. The effect of current density, pH and Fe{sup 2+} and drug concentrations on the oxidation power of PEF process in combined cell is examined. Propranolol decay follows a pseudo first-order reaction in most cases. Aromatic intermediates such as 1-naphthol and phthalic acid and generated carboxylic acids such as maleic, formic, oxalic and oxamic are detected and quantified by high-performance liquid chromatography. The chloride ions present in the starting solution are slowly oxidized at the BDD anode. In PEF treatments, all initial N of propranolol is completely transformed into inorganic ions, with predominance of NH{sub 4}{sup +} over NO{sub 3}{sup -} ion.

  18. 掺硼金刚石膜电极处理医院废水的研究%Study on Hospital Wastewater using Boron-doped Diamond Electrode

    Institute of Scientific and Technical Information of China (English)

    于鲁冀; 孔德芳; 王震; 杨强

    2013-01-01

    通过研究自制电解槽,利用掺硼金刚石膜电极(BDD)对医疗废水进行消毒实验研究.实验研究了电流密度、消毒时间及Cl-浓度对消毒效果的影响.实验结果表明:电流密度越大,消毒效果越好;消毒接触时间越长,消毒效果越好;Cl-浓度对消毒效果影响显著,医疗废水C1-质量浓度达到200 mg/L以上,消毒接触时间≥9s,出水即可满足GB 18466-2005《医疗机构水污染物排放标准》粪大肠茵群数均不得超过500 MPN/L.%Study on the disinfection effect of hospital wastewater using the boron-doped diamond film electrode (BDD) in the self-electrolyzer was carried out. The disinfection effect of current density, disinfection time and the concentration of CV were studied in this experiment. The results showed that the greater the electric current density is, the better disinfection effect will be. The longer the contact time is,the better disinfection effect will be. The concentration of Cl- is significant on the disinfection effect. When the concentration of Cl- in hospital wastewater is more than 200 mg/L as well as the disinfection contact time is more than 9 s,the effluent could meet the requirement of the Medical Institutions Sewage Discharge Standard (GB 18466—2005) in which the value of fecal coliform should be no more than 500 MPN/L.

  19. A novel paper-based device coupled with a silver nanoparticle-modified boron-doped diamond electrode for cholesterol detection

    Energy Technology Data Exchange (ETDEWEB)

    Nantaphol, Siriwan [Electrochemistry and Optical Spectroscopy Research Unit, Department of Chemistry, Faculty of Science, Chulalongkorn University, 254 Phayathai Road, Pathumwan, Bangkok 10330 (Thailand); Chailapakul, Orawon, E-mail: corawon@chula.ac.th [Electrochemistry and Optical Spectroscopy Research Unit, Department of Chemistry, Faculty of Science, Chulalongkorn University, 254 Phayathai Road, Pathumwan, Bangkok 10330 (Thailand); Center for Petroleum, Petrochemicals and Advanced Materials, Chulalongkorn University, 254 Phayathai Road, Pathumwan, Bangkok 10330 (Thailand); Siangproh, Weena, E-mail: weenasi@hotmail.com [Department of Chemistry, Faculty of Science, Srinakharinwirot University, Sukhumvit 23, Wattanna, Bangkok 10110 (Thailand)

    2015-09-03

    A novel paper-based analytical device (PAD) coupled with a silver nanoparticle-modified boron-doped diamond (AgNP/BDD) electrode was first developed as a cholesterol sensor. The AgNP/BDD electrode was used as working electrode after modification by AgNPs using an electrodeposition method. Wax printing was used to define the hydrophilic and hydrophobic areas on filter paper, and then counter and reference electrodes were fabricated on the hydrophilic area by screen-printing in house. For the amperometric detection, cholesterol and cholesterol oxidase (ChOx) were directly drop-cast onto the hydrophilic area, and H{sub 2}O{sub 2} produced from the enzymatic reaction was monitored. The fabricated device demonstrated a good linearity (0.39 mg dL{sup −1} to 270.69 mg dL{sup −1}), low detection limit (0.25 mg dL{sup −1}), and high sensitivity (49.61 μA mM{sup −1} cm{sup −2}). The precision value for ten replicates was 3.76% RSD for 1 mM H{sub 2}O{sub 2}. In addition, this biosensor exhibited very high selectivity for cholesterol detection and excellent recoveries for bovine serum analysis (in the range of 99.6–100.8%). The results showed that this new sensing platform will be an alternative tool for cholesterol detection in routine diagnosis and offers the advantages of low sample/reagent consumption, low cost, portability, and short analysis time. - Highlights: • Novel PAD coupled with AgNP/BDDE for cholesterol determination was developed. • Wide linear range, low detection limit and high selectivity were achieved. • This sensor was successfully applied for cholesterol determination in bovine serum. • This platform offers the advantages of low sample/reagent consumption and low cost.

  20. Investigation of the synergistic effects for p-nitrophenol mineralization by a combined process of ozonation and electrolysis using a boron-doped diamond anode

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, Cuicui [School of Environment, State Key Joint Laboratory of Environmental Simulation and Pollution Control, Tsinghua University, Beijing 100084 (China); Yuan, Shi [School of Environment, State Key Joint Laboratory of Environmental Simulation and Pollution Control, Tsinghua University, Beijing 100084 (China); Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055 (China); Li, Xiang; Wang, Huijiao; Bakheet, Belal [School of Environment, State Key Joint Laboratory of Environmental Simulation and Pollution Control, Tsinghua University, Beijing 100084 (China); Komarneni, Sridhar [Department of Ecosystem Science and Management and Material Research Institute, 205 MRL Building, The Pennsylvania State University, University Park, PA 16802 (United States); Wang, Yujue, E-mail: wangyujue@tsinghua.edu.cn [School of Environment, State Key Joint Laboratory of Environmental Simulation and Pollution Control, Tsinghua University, Beijing 100084 (China); Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055 (China)

    2014-09-15

    Graphical abstract: - Highlights: • Combining electrolysis with ozonation greatly enhances nitrophenol mineralization. • O{sub 3} can rapidly degrade nitrophenol to carboxylic acids in the bulk solution. • Carboxylic acids can be mineralized by ·OH generated from multiple sources in the electrolysis-O{sub 3} process. • Electrolysis and ozonation can compensate for each other's weakness on pollutant degradation. - Abstract: Electrolysis and ozonation are two commonly used technologies for treating wastewaters contaminated with nitrophenol pollutants. However, they are often handicapped by their slow kinetics and low yields of total organic carbon (TOC) mineralization. To improve TOC mineralization efficiency, we combined electrolysis using a boron-doped diamond (BDD) anode with ozonation (electrolysis-O{sub 3}) to treat a p-nitrophenol (PNP) aqueous solution. Up to 91% TOC was removed after 60 min of the electrolysis-O{sub 3} process. In comparison, only 20 and 44% TOC was respectively removed by individual electrolysis and ozonation treatment conducted under similar reaction conditions. The result indicates that when electrolysis and ozonation are applied simultaneously, they have a significant synergy for PNP mineralization. This synergy can be mainly attributed to (i) the rapid degradation of PNP to carboxylic acids (e.g., oxalic acid and acetic acid) by O{sub 3}, which would otherwise take a much longer time by electrolysis alone, and (ii) the effective mineralization of the ozone-refractory carboxylic acids to CO{sub 2} by ·OH generated from multiple sources in the electrolysis-O{sub 3} system. The result suggests that combining electrolysis with ozonation can provide a simple and effective way to mutually compensate the limitations of the two processes for degradation of phenolic pollutants.

  1. Electrical and photocatalytic properties of boron-doped ZnO nanostructure grown on PET-ITO flexible substrates by hydrothermal method.

    Science.gov (United States)

    Wang, Wei; Ai, Taotao; Yu, Qi

    2017-02-13

    Boron-doped zinc oxide sheet-spheres were synthesized on PET-ITO flexible substrates using a hydrothermal method at 90 °C for 5 h. The results of X-ray diffraction and X-ray photoelectron spectroscopy indicated that the B atoms were successfully doped into the ZnO lattice, the incorporation of B led to an increase in the lattice constant of ZnO and a change in its internal stress. The growth mechanism of pure ZnO nanorods and B-doped ZnO sheet-spheres was specifically investigated. The as-prepared BZO/PET-ITO heterojunction possessed obvious rectification properties and its positive turn-on voltage was 0.4 V. The carrier transport mechanisms involved three models such as hot carrier tunneling theory, tunneling recombination, and series-resistance effect were explored. The BZO/PET-ITO nanostructures were more effective than pure ZnO to degrade the RY 15, and the degradation rate reached 41.45%. The decomposition process with BZO nanostructure followed first-order reaction kinetics. The photocurrent and electrochemical impedance spectroscopy revealed that the B-doping could promote the separation of photo-generated electron-hole pairs, which was beneficial to enhance the photocatalytic activity. The photocurrent density of B-doped and pure ZnO/PET-ITO were 0.055 mA/cm(2) and 0.016 mA/cm(2), respectively. The photocatalytic mechanism of the sample was analyzed by the energy band theory.

  2. Degradation of 4,6-dinitro-o-cresol from water by anodic oxidation with a boron-doped diamond electrode

    Energy Technology Data Exchange (ETDEWEB)

    Flox, Cristina [Laboratori de Ciencia i Tecnologia Electroquimica de Materials, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain); Garrido, Jose Antonio [Laboratori de Ciencia i Tecnologia Electroquimica de Materials, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain); Rodriguez, Rosa Maria [Laboratori de Ciencia i Tecnologia Electroquimica de Materials, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain); Centellas, Francesc [Laboratori de Ciencia i Tecnologia Electroquimica de Materials, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain); Cabot, Pere-Lluis [Laboratori de Ciencia i Tecnologia Electroquimica de Materials, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain); Arias, Conchita [Laboratori de Ciencia i Tecnologia Electroquimica de Materials, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain); Brillas, Enric [Laboratori de Ciencia i Tecnologia Electroquimica de Materials, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain)]. E-mail: brillas@ub.edu

    2005-06-10

    Anodic oxidation of 4,6-dinitro-o-cresol (DNOC) has been studied in a cell of 100 ml with a boron-doped diamond anode and a graphite cathode, both of 3-cm{sup 2} area. Solutions containing up to approximately 240 mg l{sup -1} of compound in the pH range 2.0-12.0 have been treated at 100, 300 and 450 mA between 15 and 50 deg C. Total mineralization is always achieved due to the great amount of hydroxyl radical ({center_dot}OH) produced as oxidant on the anode surface. Total organic carbon is more rapidly removed in acid medium, being the optimum pH 3.0. The degradation rate increases when temperature, current and DNOC concentration increase. However, at 100 mA depollution becomes more effective from 71 mg l{sup -1} of initial pollutant. A pseudo first-order kinetics for DNOC decay is always found by reversed-phase chromatography, with a rate constant practically independent of pH, as expected if the same electroactive species is oxidized in all media. Ion-exclusion chromatography allowed the detection of oxalic acid as the ultimate carboxylic acid. The mineralization process leads to the complete release of NO{sub 3} {sup -} ions from the destruction of nitroderivative intermediates. These products are oxidized simultaneously with accumulated oxalic acid up to the end of electrolyses. Comparative treatment of the same solutions with a Pt anode yields a quite poor depollution because of the generation of much lower amounts of reactive {center_dot}OH on its surface.

  3. Diclofenac on boron-doped diamond electrode: from electroanalytical determination to prediction of the electrooxidation mechanism with HPLC-ESI/HRMS and computational simulations.

    Science.gov (United States)

    Lucas, Francisco Willian de S; Mascaro, Lucia H; Fill, Taicia P; Rodrigues-Filho, Edson; Franco-Junior, Edison; Homem-de-Mello, Paula; de Lima-Neto, Pedro; Correia, Adriana N

    2014-05-20

    Using square-wave voltammetry coupled to the boron-doped diamond electrode (BDDE), it was possible to develop an analytical methodology for identification and quantification of diclofenac (DCL) in tablets and synthetic urine. The electroanalytical procedure was validated, with results being statistically equal to those obtained by chromatographic standard method, showing linear range of 4.94 × 10(-7) to 4.43 × 10(-6) mol L(-1), detection limit of 1.15 × 10(-7) mol L(-1), quantification limit of 3.85 × 10(-7) mol L(-1), repeatability of 3.05% (n = 10), and reproducibility of 1.27% (n = 5). The association of electrochemical techniques with UV-vis spectroscopy, computational simulations and HPLC-ESI/HRMS led us to conclude that the electrooxidation of DCL on the BDDE involved two electrons and two protons, where the products are colorful and easily hydrolyzable dimers. Density functional theory calculations allowed to evaluate the stability of dimers A, B, and C, suggesting dimer C was more stable than the other two proposed structures, ca. 4 kcal mol(-1). The comparison of the dimers stabilities with the stabilities of the molecular ions observed in the MS, the compounds that showed retention time (RT) of 15.53, 21.44, and 22.39 min were identified as the dimers B, C, and A, respectively. Corroborating the observed chromatographic profile, dimer B had a dipole moment almost twice higher than that of dimers A and C. As expected, dimer B has really shorter RT than dimers A and C. The majority dimer was the A (71%) and the C (19.8%) should be the minority dimer. However, the minority was the dimer B, which was formed in the proportion of 9.2%. This inversion between the formation proportion of dimer B and dimer C can be explained by preferential conformation of the intermediaries (cation-radicals) on the surface.

  4. Electrical and photocatalytic properties of boron-doped ZnO nanostructure grown on PET–ITO flexible substrates by hydrothermal method

    Science.gov (United States)

    Wang, Wei; Ai, Taotao; Yu, Qi

    2017-02-01

    Boron-doped zinc oxide sheet-spheres were synthesized on PET–ITO flexible substrates using a hydrothermal method at 90 °C for 5 h. The results of X-ray diffraction and X-ray photoelectron spectroscopy indicated that the B atoms were successfully doped into the ZnO lattice, the incorporation of B led to an increase in the lattice constant of ZnO and a change in its internal stress. The growth mechanism of pure ZnO nanorods and B-doped ZnO sheet-spheres was specifically investigated. The as-prepared BZO/PET–ITO heterojunction possessed obvious rectification properties and its positive turn-on voltage was 0.4 V. The carrier transport mechanisms involved three models such as hot carrier tunneling theory, tunneling recombination, and series-resistance effect were explored. The BZO/PET–ITO nanostructures were more effective than pure ZnO to degrade the RY 15, and the degradation rate reached 41.45%. The decomposition process with BZO nanostructure followed first-order reaction kinetics. The photocurrent and electrochemical impedance spectroscopy revealed that the B-doping could promote the separation of photo-generated electron-hole pairs, which was beneficial to enhance the photocatalytic activity. The photocurrent density of B-doped and pure ZnO/PET–ITO were 0.055 mA/cm2 and 0.016 mA/cm2, respectively. The photocatalytic mechanism of the sample was analyzed by the energy band theory.

  5. AFM studies and electrochemical characterization of boron-doped diamond surfaces modified with metal oxides by the Sol-Gel method

    Directory of Open Access Journals (Sweden)

    Suffredini Hugo B.

    2006-01-01

    Full Text Available Continuing previous investigations, direct surface modifications of boron-doped diamond (BDD electrodes with metal oxides (PtOx, RuO2, IrO2 and PbO2 and with some mixed composites were carried out by the Sol-Gel technique. The materials were studied by atomic force microscopy (AFM to determine their surface topologies and by electrochemical techniques to establish the catalytic activity towards the oxygen evolution reaction (OER and also, for the PtOx and PtOx-RuO2 composites, the ethanol oxidation reactions in acid media. The stability of PtOx coating covered by a Nafion® film was also tested by long-term operation. The AFM results indicated sites of heterogeneous deposition and the electrochemical studies demonstrated that the active surface area changed considerably with the proposed method of modification. The IrO2/BDD electrode showed the best performance to the OER with the onset of the oxidation current at ~1.4 V, a value 200 mV lower than for the PtOx/BDD electrode. The enhanced stability of PtOx/BDD electrodes achieved by the application of a Nafion® film and already reported in acid media was further proved using the ethanol oxidation reaction. Only a small loss of activity (6% was observed after 4-hours electrolysis while one-thousand voltammetric cycles left the surface practically unchanged. In addition, preliminary studies for the same reaction on PtOx/BDD and PtOx-RuO2/BDD electrodes demonstrated the excellent activity of these mixed Sol-Gel coatings on the BDD surface and the possibility of further investigations for practical applications.

  6. 硼掺杂金刚石电极及其电分析应用%Electroanalytical Applications of Boron Doped Diamond Electrode

    Institute of Scientific and Technical Information of China (English)

    高成耀; 常明; 李晓伟; 李翠平

    2011-01-01

    一种新电极材料的发明往往会推动电分析测试的发展.硼掺杂金刚石(BDD)电极在电分析中具备宽电势窗口、低背景电流、耐腐蚀稳定性高和低吸附的特点,因而在电分析化学中引起了广泛的兴趣.本文对BDD电极的制备、表征和基本电分析性质进行了介绍,并对其在毛细管电泳、生物传感电极、痕量金属离子检测、化学修饰电极及化学需氧量快速测定方面的应用进行了综述.%Discoveries of new materials have significant impact on development of new methods and instrumentation for eletroanalysis.Boron doped diamond (BDD) electrode occupies a special place as an electrode material with interesting applications in electroanalysis because of its superior properties such as a wide potential window, low background current responses, remarkable corrosion stability, an inert surface with low adsorption.BDD electrodes have attracted the interests of many researchers for electrophoresis.The object of this article is to discuss the recent results available in the literature concerning the application of BDD electrodes to electroanalysis such as capillary electrophoresis end-column detection, electrochemical biosensor, anodic stripping voltammetry for trace metal ion detection, modified diamond electrodes and chemical oxygen demand detection.

  7. Filmes de diamante CVD dopado com boro. Parte I . Histórico, produção e caracterização Boron-doped CVD diamond films. Part I. History, production and characterization

    Directory of Open Access Journals (Sweden)

    Rita de Cássia Mendes de Barros

    2005-03-01

    Full Text Available This review presents a brief account concerning the production, characterization and evolution of the knowledge in the area of diamond and boron-doped diamond films. The most important methods used for the growth of these films, such as chemical vapor deposition and high pressure/high temperature systems, as well as the several kinds of reactors which can be employed are reviewed. However, larger emphasis is given to the CVD method. Morphological, structural and electric properties of these films, as well as their role in the performance of voltammetric electrodes for electrochemistry and electroanalytical chemistry are also discussed.

  8. Silicon solar cells with high open-circuit voltage

    Science.gov (United States)

    Minnucci, J. A.; Matthei, K. W.; Kirkpatrick, A. R.; Mccrosky, A.

    1980-01-01

    Open-circuit voltages as high as 0.645 V (AM0-25 C) have been obtained by a new process developed for low-resistivity silicon. The method utilizes high-dose phosphorus implantation, followed by furnace annealing and simultaneous oxide growth to form high-efficiency, shallow junctions. The effect of the thermally grown oxide is a reduction of surface recombination velocity; the oxide also acts as a moderately efficient AR coating. Boron doped silicon with resistivities from 0.1 to 0.3 ohm-cm has been processed according to this sequence; results show highest open-circuit voltage is attained with 0.1-ohm-cm starting material. The effects of bandgap narrowing, caused by high doping concentrations in the junction, were also investigated by implanting phosphorus over a wide range of dose levels.

  9. Electrochemical degradation of a real textile effluent using boron-doped diamond or {beta}-PbO{sub 2} as anode

    Energy Technology Data Exchange (ETDEWEB)

    Aquino, Jose M.; Pereira, Gabriel F. [Departmento de Quimica, Universidade Federal de Sao Carlos, C. P. 676, 13560-970 Sao Carlos, SP (Brazil); Rocha-Filho, Romeu C., E-mail: romeu@dq.ufscar.br [Departmento de Quimica, Universidade Federal de Sao Carlos, C. P. 676, 13560-970 Sao Carlos, SP (Brazil); Bocchi, Nerilso; Biaggio, Sonia R. [Departmento de Quimica, Universidade Federal de Sao Carlos, C. P. 676, 13560-970 Sao Carlos, SP (Brazil)

    2011-09-15

    Highlights: {center_dot} Diamond anode enables total abatement of a real textile effluent COD with low energy consumption. {center_dot} Use of diamond anode enables excellent decolorization rate of effluent in the presence of Cl{sup -} ions. {center_dot} Diamond anode might be an excellent option for electrochemical treatment of real textile effluents. {center_dot} PbO{sub 2} anode, due to low cost and easiness of preparation, may be an option to decolorize the effluents. - Abstract: Constant current electrolyses are carried out in a filter-press reactor using a boron-doped diamond (Nb/BDD) or a Ti-Pt/{beta}-PbO{sub 2} anode, varying current density (j) and temperature. The degradation of the real textile effluent is followed by its decolorization and chemical oxygen demand (COD) abatement. The effect of adding NaCl (1.5 g L{sup -1}) on the degradation of the effluent is also investigated. The Nb/BDD anode yields much higher decolorization (attaining the DFZ limit) and COD-abatement rates than the Ti-Pt/{beta}-PbO{sub 2} anode, at any experimental condition. The best conditions are j = 5 mA cm{sup -2} and 55 {sup o}C, for the system's optimized hydrodynamic conditions. The addition of chloride ions significantly increases the decolorization rate; thus a decrease of more than 90% of the effluent relative absorbance is attained using an applied electric charge per unit volume of the electrolyzed effluent (Q{sub ap}) of only about 2 kA h m{sup -3}. Practically total abatement of the effluent COD is attained with the Nb/BDD anode using a Q{sub ap} value of only 7 kA h m{sup -3}, with an energy consumption of about 30 kW h m{sup -3}. This result allows to conclude that the Nb/BDD electrode might be an excellent option for the remediation of textile effluents.

  10. Cleaning method for regeneration of boron-doped diamond electrode%掺硼金刚石电极的再生性清洗方法研究

    Institute of Scientific and Technical Information of China (English)

    罗昊; 苟立; 包晗

    2011-01-01

    Boron-doped diamond (BDD) film electrode is of interest because of its excellent chemical and electrochemical stability,and very low adsorption of chemical species.But after repeated detection of high concentration neurotransmitters such as dopamine (DA) and serotonin (5-HT) ,the BDD electrode was fouled.Especially for the surface modified electrode,the adsorbate cannot be removed easily.Electrodes were sonicated in different cleaning agents, such as deionized water, ethanol,isopropanol.Cyclic voltammerry using Fe(CN)3-/4- redox probe confirmed less adsorbate on the surface of BDD electrode after sonication in isopropanol.The unmodified electrode with weak adsorption is easier to clean than modified one.Hydrogen microwave plasma treatment for 15 min is beneficial to both electrodes to remove surface attachment.The cleaned electrode detected the same oxidation peak and reduction peak of DA as the fresh one.%掺硼金刚石电极(BDD)是一种化学和电化学稳定性高、不易吸附污染物的电极.但是多次重复检测较高浓度神经递质如多巴胺、羟色胺后,产生了电极污染.特别是经过表面改性的电极,其表面吸附物难以简单去除.以Fe(CN)3-/4-氧化还原对为探针,通过二次水、乙醇、异丙醇等不同液体超声清洗,发现异丙醇是较好的清洗剂.未改性电极表面吸附弱,比改性电极容易清洗.氢气等离子处理15分钟,可以有效去除两类电极表面的吸附物,多巴胺检测结果表明清洗后的电极与新鲜电极测试结果接近,实现了旧电极的再生.

  11. Mechanism of Enhanced Electrochemical Oxidation of 2,4-dichlorophenoxyacetic Acid with in situ Microwave Activated Boron-doped Diamond and Platinum Anodes

    Science.gov (United States)

    Gao, Junxia; Zhao, Guohua; Liu, Meichuan; Li, Dongming

    2009-09-01

    Remarkable enhancement in degradation effect is achieved at in situ activated boron-doped diamond (BDD) and Pt anodes with different extent through electrochemical oxidation (EC) of 2,4-dichlorophenoxyacetic acid (2,4-D) with microwave (MW) radiation in a flow system. Results show that when EC is activated with MW radiation, the complete mineralization time of 2,4-D at the BDD is reduced quickly from 10 to 4 h while Chemical oxygen demand (COD) removal at Pt is increased from 37.7 to 58.3% at 10 h; the initial current efficiency is both improved about 1.5 times while the pseudo-first-order rate constant is increased by 153 and 119% at the BDD and Pt, respectively. To gain insight into the higher efficiency in microwave activated EC, the mechanism has therefore been systematically evaluated from the essence of electrochemical reaction and the accumulated hydroxyl radical concentration. 2,4-Dichlorophenol, catechol, benquinone, and maleic and oxalic acids are the main intermediates on the Pt anode measured by high performance liquid chromatography (HPLC), while the intermediates on the BDD electrode include 2,4-dichlorophenol, hydroquinone, and maleic and oxalic acids. The reaction pathway with microwave radiation is the same as that in a conventional electrochemical oxidation on both electrodes. While less and lower aromatic intermediates produce at the BDD with MW, which suggests the higher ring-open ratio and the faster oxidation of carboxylic acids. With microwave radiation, the ring-open ratio at the BDD is increased to 98.8% from 85.6%; the value at Pt is increased to 67.3% from 35.9%. So microwave radiation can activate the electrochemical oxidation, which leads to the higher efficiency. This promotion is mainly due to the higher accumulated hydroxyl radical concentration and the effects by microwave radiation. All the results prove that the BDD electrode presents much better mineralization performance with MW. To the best of our knowledge, it is the first

  12. Surface Roughness and Critical Exponent Analyses of Boron-Doped Diamond Films Using Atomic Force Microscopy Imaging: Application of Autocorrelation and Power Spectral Density Functions

    Science.gov (United States)

    Gupta, S.; Vierkant, G. P.

    2014-09-01

    The evolution of the surface roughness of growing metal or semiconductor thin films provides much needed information about their growth kinetics and corresponding mechanism. While some systems show stages of nucleation, coalescence, and growth, others exhibit varying microstructures for different process conditions. In view of these classifications, we report herein detailed analyses based on atomic force microscopy (AFM) characterization to extract the surface roughness and growth kinetics exponents of relatively low boron-doped diamond (BDD) films by utilizing the analytical power spectral density (PSD) and autocorrelation function (ACF) as mathematical tools. The machining industry has applied PSD for a number of years for tool design and analysis of wear and machined surface quality. Herein, we present similar analyses at the mesoscale to study the surface morphology as well as quality of BDD films grown using the microwave plasma-assisted chemical vapor deposition technique. PSD spectra as a function of boron concentration (in gaseous phase) are compared with those for samples grown without boron. We find that relatively higher boron concentration yields higher amplitudes of the longer-wavelength power spectral lines, with amplitudes decreasing in an exponential or power-law fashion towards shorter wavelengths, determining the roughness exponent ( α ≈ 0.16 ± 0.03) and growth exponent ( β ≈ 0.54), albeit indirectly. A unique application of the ACF, which is widely used in signal processing, was also applied to one-dimensional or line analyses (i.e., along the x- and y-axes) of AFM images, revealing surface topology datasets with varying boron concentration. Here, the ACF was used to cancel random surface "noise" and identify any spatial periodicity via repetitive ACF peaks or spatially correlated noise. Periodicity at shorter spatial wavelengths was observed for no doping and low doping levels, while smaller correlations were observed for relatively

  13. Preparation of TiO{sub 2}/boron-doped diamond/Ta multilayer films and use as electrode materials for supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Chao, E-mail: sc_sq1988@163.com [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Li, Hongji, E-mail: hongjili@yeah.net [Tianjin Key Laboratory of Organic Solar Cells and Photochemical Conversion, School of Chemistry and Chemical Engineering, Tianjin University of Technology, Tianjin 300384 (China); Li, Cuiping, E-mail: licp226@126.com [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Li, Mingji, E-mail: limingji@163.com [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Qu, Changqing, E-mail: quchangqing@tjut.edu.cn [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Yang, Baohe, E-mail: bhyang207@163.com [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China)

    2015-12-01

    Highlights: • BDD film was deposited on Ta substrate by hot filament CVD method. • Ti layer was deposited on BDD film by radio frequency magnetron sputtering. • Nanostructured TiO{sub 2}/BDD/nanoporous Ta films were prepared. • The films exhibit good capacitance performance and excellent stability. - Abstract: We report nanostructured TiO{sub 2}/boron-doped diamond (BDD)/Ta multilayer films and their electrochemical performances as supercapacitor electrodes. The BDD films were grown on Ta substrates using electron-assisted hot filament chemical vapor deposition. Ti metal layers were deposited on the BDD surfaces by radio frequency magnetron sputtering, and nanostructured TiO{sub 2}/BDD/Ta thin films were prepared by electrochemical etching and thermal annealing. The successful formation of TiO{sub 2} and Ta layered nanostructures was demonstrated using scanning electron and transmission electron microscopies. The electrochemical responses of these electrodes were evaluated by examining their use as electrical double-layer capacitors, using cyclic voltammetry, and galvanostatic charge/discharge and impedance measurements. When the TiO{sub 2}/BDD/Ta film was used as the working electrode with 0.1 M Na{sub 2}SO{sub 4} as the electrolyte, the capacitor had a specific capacitance of 5.23 mF cm{sup −2} at a scan rate of 5 mV s{sup −1} for a B/C ratio of 0.1% w/w. Furthermore, the TiO{sub 2}/BDD/Ta film had improved electrochemical stability, with a retention of 89.3% after 500 cycles. This electrochemical behavior is attributed to the quality of the BDD, the surface roughness and electrocatalytic activities of the TiO{sub 2} layer and Ta nanoporous structures, and the synergies between them. These results show that TiO{sub 2}/BDD/Ta films are promising as capacitor electrodes for special applications.

  14. Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

    Science.gov (United States)

    Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

    2016-12-28

    The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiCx(p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiCx(p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiCx(p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm(-2) on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a Voc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p(+)/p-wafer full-side-passivated rear-side scheme shown here.

  15. Piezoresistive boron doped diamond nanowire

    Science.gov (United States)

    Sumant, Anirudha V.; Wang, Xinpeng

    2016-09-13

    A UNCD nanowire comprises a first end electrically coupled to a first contact pad which is disposed on a substrate. A second end is electrically coupled to a second contact pad also disposed on the substrate. The UNCD nanowire is doped with a dopant and disposed over the substrate. The UNCD nanowire is movable between a first configuration in which no force is exerted on the UNCD nanowire and a second configuration in which the UNCD nanowire bends about the first end and the second end in response to a force. The UNCD nanowire has a first resistance in the first configuration and a second resistance in the second configuration which is different from the first resistance. The UNCD nanowire is structured to have a gauge factor of at least about 70, for example, in the range of about 70 to about 1,800.

  16. Piezoresistive boron doped diamond nanowire

    Energy Technology Data Exchange (ETDEWEB)

    Sumant, Anirudha V.; Wang, Xinpeng

    2017-07-04

    A UNCD nanowire comprises a first end electrically coupled to a first contact pad which is disposed on a substrate. A second end is electrically coupled to a second contact pad also disposed on the substrate. The UNCD nanowire is doped with a dopant and disposed over the substrate. The UNCD nanowire is movable between a first configuration in which no force is exerted on the UNCD nanowire and a second configuration in which the UNCD nanowire bends about the first end and the second end in response to a force. The UNCD nanowire has a first resistance in the first configuration and a second resistance in the second configuration which is different from the first resistance. The UNCD nanowire is structured to have a gauge factor of at least about 70, for example, in the range of about 70 to about 1,800.

  17. Electrochemical detection of biapenem by a boron-doped diamond nanorod electrode%硼掺杂金刚石纳米棒电极对比阿培南的电化学检测研究

    Institute of Scientific and Technical Information of China (English)

    钟萍; 罗代兵; 任雁; 只金芳

    2011-01-01

    Biapenem is a new parenteral carbapenem that has antibacterial activity against a wide range of Gram-positive and -negative bacteria. Electroanalysis of biapenem and was made on a boron-doped diamond nanorod(BDDN ) electrode compared with a planar boron-doped diamond (BDD) electrode under the same conditions. The detection range of the BDDN electrode is wider and the sensitivity(0.038μ,A μM-1 )is higher than that of the BDD electrode(0.028μAμM-1 ). The BDDN electrode displays an amplified response than the flat BDD electrode. The BDDN electrode exhibits excellent electrochemical performance due to its higher e-lectro-active surface area and special nanostructures.%在自制的硅纳米线上采用热丝化学气相沉积方法制备了硼掺杂金刚石纳米棒电极.采用循环伏安及计时电流方法测定了在磷酸缓冲溶液中的药物比阿培南的浓度,灵敏度达到0.038μA μM-1较相同条件下制备得到的普通硼掺杂金刚石电极(0.028μA μM-1)相比有所提高.该纳米棒电极由于特殊的表面形貌,较普通硼掺杂金刚石电极表现出更优异的电化学检测性能.

  18. Study of silicon strain gauges under electron irradiation

    Directory of Open Access Journals (Sweden)

    Liakh-Kaguj N. S.

    2010-02-01

    Full Text Available The characteristics of semiconductor strain gauges based on boron doped р-type silicon whiskers under high energy electron irradiation were studied. Strain gauges were irradiated at room temperature by electrons with energies 4,2—14 MeV and different doses 5·1016—1·1018 el/cm2. The main parameters of irradiated strain gauges: resistance, its temperature dependence and resistance change vs strain at –196…+100°C and –269…+20°C temperature ranges were measured. There are determined the values of electron irradiation energy and dose at which the radiation stability of strain gauges could be ensured.

  19. Heavily Doped Semiconductor Nanocrystal Quantum Dots

    National Research Council Canada - National Science Library

    David Mocatta; Guy Cohen; Jonathan Schattner; Oded Millo; Eran Rabani; Uri Banin

    2011-01-01

    ... of fundamental understanding of this heavily doped limit under strong quantum confinement. We developed a method to dope semiconductor nanocrystals with metal impurities, enabling control of the band gap and Fermi energy...

  20. Mid-infrared plasmonic resonances exploiting heavily-doped Ge on Si

    Science.gov (United States)

    Biagioni, P.; Sakat, E.; Baldassarre, L.; Calandrini, E.; Samarelli, A.; Gallacher, K.; Frigerio, J.; Isella, G.; Paul, D. J.; Ortolani, M.

    2015-03-01

    We address the behavior of mid-infrared localized plasmon resonances in elongated germanium antennas integrated on silicon substrates. Calculations based on Mie theory and on the experimentally retrieved dielectric constant allow us to study the tunability and the figures of merit of plasmon resonances in heavily-doped germanium and to preliminarily compare them with those of the most established plasmonic material, gold.

  1. A multidimensional high performance liquid chromatography method coupled with amperometric detection using a boron-doped diamond electrode for the simultaneous determination of sulfamethoxazole and trimethoprim in bovine milk

    Energy Technology Data Exchange (ETDEWEB)

    Andrade, Leonardo S.; Moraes, Marcela C. de; Rocha-Filho, Romeu C.; Fatibello-Filho, Orlando [Departamento de Quimica, Universidade Federal de Sao Carlos, C.P. 676, 13560-970 Sao Carlos - SP (Brazil); Cass, Quezia B., E-mail: quezia@pesquisador.cnpq.br [Departamento de Quimica, Universidade Federal de Sao Carlos, C.P. 676, 13560-970 Sao Carlos - SP (Brazil)

    2009-11-10

    The development and validation of a multidimensional HPLC method using an on-line clean-up column coupled with amperometric detection employing a boron-doped diamond (BDD) electrode for the simultaneous determination of sulfamethoxazole (SMX) and trimethoprim (TMP) in bovine milk are presented. Aliquots of pre-prepared skim-milk samples were directly injected into a RAM octyl-BSA column in order to remove proteins that otherwise would interfere with milk analysis. After exclusion of the milk proteins, SMX and TMP were transferred to the analytical column (an octyl column) and the separation of the compounds from one another and from other endogenous milk components was achieved. SMX and TMP were detected amperometrically at 1.25 V vs. Ag/AgCl (3.0 mol L{sup -1} KCl). Results with good linearity in the concentration ranges 50-800 and 25-400 {mu}g L{sup -1} for SMX and TMP, respectively, were obtained and no fouling of the BDD electrode was observed within the experimental period of several hours. The intra- and inter-assay coefficients of variation were less than 10% for both drugs and the obtained LOD values for SMX and TMP were 25.0 and 15.0 {mu}g L{sup -1}, respectively.

  2. Phenol removal from wastewaters by electrochemical oxidation using boron doped diamond (BDD) and Ti/Ti{sub 0.7}Ru{sub 0.3}O{sub 2} DSA Registered-Sign electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Britto-Costa, P.H.; Ruotolo, L.A.M., E-mail: pluis@ufscar.br [Universidade Federal de Sao Carlos (UFSCAR), SP (Brazil). Dept. de Engenharia Quimica

    2012-10-15

    Industrial wastewater containing non-biodegradable organic pollutants consists of highly toxic effluents whose treatment is necessary due to environmental and economical restrictions. In order to treat these effluents, an electrochemical process using a dimensionally stable anode (DSA Registered-Sign ) and boron-doped diamond (BDD) electrode was studied. The performance of these electrodes for COD removal from aqueous phenol solution was evaluated in the absence and presence of different chloride concentrations. The results showed that DSA Registered-Sign could be successfully used to remove COD when high chloride concentration (3035 mg L{sup -1}Cl{sup -}) and mild current density are employed (50 mA cm{sup -2}). On the other hand, the presence of chloride did not have the same significant effect on the COD depletion rate using BDD; however, under mild conditions (50 mA cm{sup -2}, 0.190 m s{sup -1}), the addition of 607 mg L{sup -1} Cl{sup -} improved the COD removal by approximately 52% after 8 hours of electrolysis. The effect of current density (i) and flow velocity (v) were also studied, and it was verified that they have an important role on the process performance, especially when DSA Registered-Sign is used. (author)

  3. Boron-doped Graphene as Interlayer for Lithium-Sulfur Batteries%硼掺杂石墨烯用作锂硫电池夹层材料的研究

    Institute of Scientific and Technical Information of China (English)

    王璐

    2016-01-01

    Boron doped graphene (BGE) was fabricated from pyrolyzation of boric acid and reduced graphene oxide (rGO) and employed as the interlayer between sulfur cathode and separator. Research results were abtained that boron atom had been introduced into graphene skeleton, and improved the rate performance of~500 mAh/g capacity at 10C.%将硼酸和还原氧化石墨烯在高温下热解,制得硼掺杂石墨烯BGE,并用于硫正极和隔膜之间的夹层材料。形貌结构表征证明,硼原子被成功掺杂到石墨烯结构中。电化学测试表明,BGE夹层提高了电极导电性。得益于其对多硫化物的物理拦截和化学吸附功能特点,BGE夹层的采用提高了电池的倍率性能,取得了在10C下500 mAh·g-1的放电比容量。

  4. Investigation on mechanical property of HFCVD boron-doped composite diamond film%HFCVD 硼掺杂复合金刚石薄膜的机械性能研究

    Institute of Scientific and Technical Information of China (English)

    王新昶; 申笑天; 孙方宏; 沈彬

    2015-01-01

    综合不同种类单层金刚石薄膜的典型优点制备的复合金刚石薄膜具有优异的综合性能,本研究对比了 UMCD、BDMCD、UFGD 和两类新型硼掺杂复合金刚石薄膜的机械性能。研究结果表明:硼掺杂技术可有效改善金刚石薄膜的附着性能,因此 BDM-UMCD 和 BDM-UM-UFGCD 薄膜均具有较好的附着性能;表层为 UMCD 薄膜的 BDM-UMCD 薄膜(84.354 GPa)具有 UMCD 薄膜(82.058 GPa)表面硬度极高的优点,但是表面粗糙度较高(R a 304.41 nm)、表面可抛光性较差;相比之下,表层为 UFGD 薄膜的BDM-UM-UFGCD 薄膜则具有 UFGD 薄膜优异的表面光洁度(R a 104.71 nm)和表面可抛光性,此外由于硬度极高的中间层 UMCD 对于表层硬度的补充作用,该复合薄膜还具有相比于单层 UFGD 薄膜(67.925 GPa)而言较高的表面硬度(72.657 GPa)。%The composite diamond films combining typical merits of different types of monolayer diamond films show excellent comprehensive performance In this article mechanical properties of UMCD BDMCD UFGCD and two novel boron-doped composite diamond films were respectively evaluated and compared Research results showed that the boron doping technology could significantly improve the film-substrate adhesion so BDM-UMCD and BDM-UM-UFGCD films both presented favorable adhesive strength The surface layer of the BDM-UMCD film was UMCD layer consequently such the composite film had extremely high surface hardness 84 354 GPa similar to the monolayer UMCD film 82 058 GPa relatively high surface roughness R a 304 41 nm and bad polishability By contrast the BDM-UM-UFGCD film with the UFGD layer as the surface performed nice surface smoothness R a 104 71 nm and polishability as well as relatively higher surface hardness 72 657 GPa than the monolayer UFGD film 67 925 GPa attributed to the reinforcement effect of the ultra-hard middle UMCD layer.

  5. Terahertz Stimulated Emission from Silicon Doped by Hydrogenlike Acceptors

    Directory of Open Access Journals (Sweden)

    S. G. Pavlov

    2014-04-01

    Full Text Available Stimulated emission in the terahertz frequency range has been realized from boron acceptor centers in silicon. Population inversion is achieved at resonant optical excitation on the 1Γ_{8}^{+} → 1Γ_{7}^{−}, 1Γ_{6}^{−}, 4Γ_{8}^{−} intracenter transitions with a midinfrared free-electron laser. Lasing occurs on two intracenter transitions around 1.75 THz. The upper laser levels are the 1Γ_{7}^{−}, 1Γ_{6}^{−}, and 4Γ_{8}^{−} states, and the lower laser level for both emission lines is the 2Γ_{8}^{+} state. In contrast to n-type intracenter silicon lasers, boron-doped silicon lasers do not involve the excited states with the longest lifetimes. Instead, the absorption cross section for the pump radiation is the dominating factor. The four-level lasing scheme implies that the deepest even-parity boron state is the 2Γ_{8}^{+} state and not the 1Γ_{7}^{+} split-off ground state, as indicated by other experiments. This is confirmed by infrared absorption spectroscopy of Si:B.

  6. Ab initio modelling of boron related defects in amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, Tiago A.; Torres, Vitor J.B. [Department of Physics, University of Aveiro, Campus Santiago, 3810-193 Aveiro (Portugal)

    2012-10-15

    We have modeled boron related point defects in amorphous silicon, using an ab initio method, the Density functional theory-pseudopotential code Aimpro. The boron atoms were embedded in 64 atom amorphous silicon cubic supercells. The calculations were performed using boron defects in 15 different supercells. These supercells were developed using a modified Wooten-Winer-Weaire bond switching mechanism. In average, the properties of the 15 supercells agree with the observed radial and bond angle distributions, as well the electronic and vibrational density of states and Raman spectra. In amorphous silicon it has been very hard to find real self-interstitials, since for almost all the tested configurations, the amorphous lattice relaxes overall. We found that substitutional boron prefers to be 4-fold coordinated. We find also an intrinsic hole-trap in the non-doped amorphous lattice, which may explain the low efficiency of boron doping. The local vibrational modes are, in average, higher than the correspondent crystalline values (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Comparison between aluminium and boron-doped junction termination extensions for high voltage 6H-SiC planar bipolar diodes

    Energy Technology Data Exchange (ETDEWEB)

    Ortolland, S.; Locatelli, M.L.; Planson, D.; Chante, J.P. [CEGELY, INSA Lyon, Villeurbanne (France); Senes, A. [Schneider Electric S.A., Centre Telemecanique, Nanterre (France)

    1998-08-01

    Recent improvements in silicon carbide (SiC) substrate and epilayer quality have allowed to fabricate devices with high voltage blocking capabilities. The mesa structure is usually used as edge termination for power SiC diodes but different problems with the etching and the passivation remain. Thus we design, realise and characterise p{sup +}nn{sup +} structure with a planar edge termination, the idea is to create a lateral extension of the junction (JTE) by implanting boron or aluminum atoms around the Al-doped p{sup +} implanted emitter. Medici software was used to optimise the geometry of the junction protection. This paper consists in describing this kind of diodes and comparing electrical characteristics of bipolar diodes with a boron- or aluminium-implanted JTE. (orig.) 8 refs.

  8. Photoinduced carrier annihilation in silicon pn junction

    Science.gov (United States)

    Sameshima, Toshiyuki; Motoki, Takayuki; Yasuda, Keisuke; Nakamura, Tomohiko; Hasumi, Masahiko; Mizuno, Toshihisa

    2015-08-01

    We report analysis of the photo-induced minority carrier effective lifetime (τeff) in a p+n junction formed on the top surfaces of a n-type silicon substrate by ion implantation of boron and phosphorus atoms at the top and bottom surfaces followed by activation by microwave heating. Bias voltages were applied to the p+ boron-doped surface with n+ phosphorus-doped surface kept at 0 V. The values of τeff were lower than 1 × 10-5 s under the reverse-bias condition. On the other hand, τeff markedly increased to 1.4 × 10-4 s as the forward-bias voltage increased to 0.7 V and then it leveled off when continuous-wave 635 nm light was illuminated at 0.74 mW/cm2 on the p+ surface. The carrier annihilation velocity S\\text{p + } at the p+ surface region was numerically estimated from the experimental τeff. S\\text{p + } ranged from 4000 to 7200 cm/s under the reverse-bias condition when the carrier annihilation velocity S\\text{n + } at the n+ surface region was assumed to be a constant value of 100 cm/s. S\\text{p + } markedly decreased to 265 cm/s as the forward-bias voltage increased to 0.7 V.

  9. Effect of boron-doping on the luminescent and electrical properties of a CdS/Si heterostructure based on Si nanoporous pillar array

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Ling Ling [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); College of Physics and Chemistry, Henan Polytechnic University, Jiaozuo 454000 (China); Wang, Xiao Bo [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); College of Physics and Electrical Engineering, Anyang Normal University, Anyang 455000 (China); Cai, Xiao Jun [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); Li, Xin Jian, E-mail: lixj@zzu.edu.cn [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China)

    2015-05-25

    Highlights: • B-doped CdS/Si-NPA heterostructure was prepared by a CBD method. • B-doping does not affect the crystal structure and surface morphology of CdS/Si-NPA. • The optical/electrical properties of CdS/Si-NPA could be tuned by changing [B]/[Cd] ratio. • CdS/Si-NPA with optimal physical properties could be prepared with [B]/[Cd] = 0.01. • The method may find applications in preparing CdS/Si-NPA devices with high device performances. - Abstract: Using silicon nanoporous pillar array (Si-NPA) as substrates and boric acid as dopant source, a series of CdS/Si nanoheterostructures were prepared by growing B-doped CdS thin films on Si-NPA via a chemical bath deposition (CBD) method. The structural, optical and electrical properties of CdS/Si-NPA were studied as a function of the [B]/[Cd] ratio of the initial CBD solutions. Our results disclosed that B concentration could be tuned effectively through changing the ratio of [B]/[Cd], which would bring large variation on the optical and electrical properties of CdS/Si-NPA without affecting its crystal structure and surface morphology. The samples with optimal optical and electrical properties were prepared with [B]/[Cd] = 0.01, in which the physical properties of relatively strong light absorption, small electrical resistivity, low turn-on voltage, small leakage current density and high breakdown voltage could be obtained. These results indicated that B-doping might be an effective path for promoting the performance of the optoelectronic devices based on CdS/Si-NPA.

  10. Chronology of heavily cratered terrains on Mercury

    Science.gov (United States)

    Marchi, S.; Chapman, C. R.

    2012-12-01

    Imaging of Mercury by Mariner 10 revealed a planet with more extensive plains units than on the Moon. Even in heavily cratered terrain, there is a lack of craters Morbidelli et al., [1] in order to interpret new crater counts on these terrains. We find that these craters are probably not saturated but may have been in equilibrium with a rapid resurfacing process, presumably volcanism that formed the earliest recognized intercrater plains. The crater retention age for this terrain, which contains the oldest large craters on Mercury, is surprisingly young, perhaps hundreds of millions of years younger than the heavily cratered pre-Nectarian terrains on the Moon [2]. These results are important for understanding the early geological and geophysical evolution of Mercury. References: [1] Morbidelli A., Marchi S., Bottke W.F., and Kring D.A. 2012. A sawtooth timeline for the first billion years of the lunar bombardment. Earth and Planetary Science Letters, in press. [2] Marchi S., Bottke W.F., Kring D.A., and Morbidelli A. 2012. The onset of the lunar cataclysm as recorded in its ancient crater populations. Earth and Planetary Science Letters 325, 27-38.

  11. Dispersion relations in heavily-doped nanostructures

    CERN Document Server

    Ghatak, Kamakhya Prasad

    2016-01-01

    This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also disc...

  12. 掺硼金刚石薄膜电极的氨基化改性及电化学行为%Boron-doped diamond thin-film electrode modified by aminophenyl and its electrochemical behavior

    Institute of Scientific and Technical Information of China (English)

    朱虹; 芶立

    2011-01-01

    Boron-doped diamond thin-film electrode was modified by the electrochemical reduction of aryl diazonium salt to attach aminophenyl group.X ray photoelectron spectroscopy(XPS)indicates the presence of N1s at the surface of electrode.By analyzing the peaks centered at 406 eV and 400 eV,XPS also suggests that nitrophenyl groups are electrochemically reduced to aminophenyl groups.The aminophenyl layer attached onto diamond thin-film electrode was demonstrated by comparing the voltammetric profiles of the Fe(CN)6-3/-4 redox couple at the electrode.The electrochemical behaviors of modified electrode were detected by differential pulse voltammetry(DPV)and cyclic voltammetry.The DPV for simultaneous determination of dopamine and ascorbic acid shows well-separated oxidation peaks with the potential difference about 0.3 V.The plasma protein adsorption at the surface modified electrode blocks electron transfer of Fe(CN)6-3/-4 redox couple.However,it does not affect the detection of dopamine.%采用重氮盐电化学还原的方法对掺硼金刚石薄膜电极进行氨基化改性,光电子能谱(XPS)证明表面N元素的存在,同时可以通过406 eV、400 eV峰强度的变化,证明硝基还原为氨基。以Fe(CN)6-3/-4氧化还原电对为探针,进一步证明了氨基层的存在。采用循环伏安法和差分脉冲伏安法研究了改性后电极的电化学行为。通过分别检测多巴胺和抗坏血酸以及它们的混合溶液,表明选用差分脉冲伏安法,氨基化改性掺硼金刚石薄膜电极能够有效分离检测两者的氧化峰,分离后两峰电势差约为0.3 V。电极表面吸附血浆蛋白后,阻碍了Fe(CN)6-3/-4氧化还原对的电子传递,但是并不妨碍多巴胺的检测。

  13. 用于航天器冷凝水处理的硼掺杂金刚石电极的制备及应用%Fabrication and Application of Boron Doped Diamond Electrodes in Condensate Water Purification in Spacecraft

    Institute of Scientific and Technical Information of China (English)

    李浩; 杨彬; 李中坚; 王传增; 韩松; 雷乐成

    2013-01-01

    Objective To effectively apply boron doped diamond (BDD) electrodes through electrochemical catalytic oxidation technology in the treatment of condensate water in spacecraft.Methods The authors manufactured a large area,equally distributed BDD electrode deposited on the Nb substrate by hot filament chemical vapor deposition (HFCVD).Then it was used to process simulated condensate water.Results Simulated condensate water 200 mL was processed with the current density of 10,13,15 mA/cm2.When the percentage of TOC removal was 80%,the required time were 150,120,100 min,and power consumption were 7.48,11.4,14.59 W,respectively.After treatment,all the alcohol type of materials in condensate water were oxidzed and no obvious delamination of the film was observed.Conclusion Compared with the PbO2 electrode and the Nb/BDD electrode,the BDD electrode has remarkable advantages in stability and treatment efficiency.%目的 通过电化学催化氧化技术,将硼掺杂金刚石(BDD)电极高效应用于航天器冷凝水的处理工作中.方法 采用热丝化学气相沉积(HFCVD)技术在铌板上制备得到了大面积、均匀分布的BDD电极,并将制得的BDD电极用于降解模拟冷凝水实验.结果 模拟冷凝水处理量为200 mL,在电流密度为10,13,15 mA/cm2条件下,达到80% TOC去除率分别需要150,120,100 min,功耗为7.48,11.4,14.59W;对处理后的冷凝水成分分析发现,冷凝水中原有的醇类物质被完全氧化;而且电极在连续运行之后也并未发现明显的剥落现象.结论 制得的BDD电极与二氧化铅电极相比,无论是在稳定性还是处理效率方面,都具有显著的优势.

  14. Electro-Fenton, UVA photoelectro-Fenton and solar photoelectro-Fenton degradation of the drug ibuprofen in acid aqueous medium using platinum and boron-doped diamond anodes

    Energy Technology Data Exchange (ETDEWEB)

    Skoumal, Marcel; Rodriguez, Rosa Maria; Cabot, Pere Lluis; Centellas, Francesc; Garrido, Jose Antonio; Arias, Conchita [Laboratori d' Electroquimica dels Materials i del Medi Ambient, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain); Brillas, Enric [Laboratori d' Electroquimica dels Materials i del Medi Ambient, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain)], E-mail: brillas@ub.edu

    2009-02-28

    The degradation of a 41 mg dm{sup -3} ibuprofen (2-(4-isobutylphenyl)propionic acid) solution of pH 3.0 has been comparatively studied by electrochemical advanced oxidation processes (EAOPs) like electro-Fenton, UVA photoelectro-Fenton and solar photoelectro-Fenton at constant current density. Experiments were performed in a one-compartment cell with a Pt or boron-doped diamond (BDD) anode and an O{sub 2}-diffusion cathode. Heterogeneous hydroxyl radical ({center_dot}OH) is generated at the anode surface from water oxidation, while homogeneous {center_dot}OH is formed from Fenton's reaction between Fe{sup 2+} and H{sub 2}O{sub 2} generated at the cathode, being its production strongly enhanced from photo-Fenton reaction induced by sunlight. Higher mineralization is attained in all methods using BDD instead Pt, because the former produces greater quantity of {center_dot}OH enhancing the oxidation of pollutants. The mineralization rate increases under UVA and solar irradiation by the rapid photodecomposition of complexes of Fe(III) with acidic intermediates. The most potent method is solar photoelectro-Fenton with BDD giving 92% mineralization due to the formation of a small proportion of highly persistent final by-products. The effect of Fe{sup 2+} content, pH and current density on photoelectro-Fenton degradation has been studied. The ibuprofen decay always follows a pseudo-first-order kinetics and its destruction rate is limited by current density and UV intensity. Aromatics such as 1-(1-hydroxyethyl)-4-isobutylbenzene, 4-isobutylacetophenone, 4-isobutylphenol and 4-ethylbenzaldehyde, and carboxylic acids such as pyruvic, acetic, formic and oxalic have been identified as oxidation by-products. Oxalic acid is the ultimate by-product and the fast photodecarboxylation of its complexes with Fe(III) under UVA or solar irradiation explains the higher oxidation power of photoelectro-Fenton methods in comparison to electro-Fenton procedures.

  15. 19.4%-efficient large-area fully screen-printed silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gatz, Sebastian; Hannebauer, Helge; Hesse, Rene; Werner, Florian; Schmidt, Arne; Dullweber, Thorsten; Bothe, Karsten [Institute for Solar Energy Hamelin (ISFH), Am Ohrberg 1, 31860 Emmerthal (Germany); Schmidt, Jan; Brendel, Rolf [Institute for Solar Energy Hamelin (ISFH), Am Ohrberg 1, 31860 Emmerthal (Germany); Institute of Solid-State Physics, University of Hannover, Appelstrasse 2, 30167 Hannover (Germany)

    2011-04-15

    We demonstrate industrially feasible large-area solar cells with passivated homogeneous emitter and rear achieving energy conversion efficiencies of up to 19.4% on 125 x 125 mm{sup 2} p-type 2-3 {omega} cm boron-doped Czochralski silicon wafers. Front and rear metal contacts are fabricated by screen-printing of silver and aluminum paste and firing in a conventional belt furnace. We implement two different dielectric rear surface passivation stacks: (i) a thermally grown silicon dioxide/silicon nitride stack and (ii) an atomic-layer-deposited aluminum oxide/silicon nitride stack. The dielectrics at the rear result in a decreased surface recombination velocity of S{sub rear} = 70 cm/s and 80 cm/s, and an increased internal IR reflectance of up to 91% corresponding to an improved J{sub sc} of up to 38.9 mA/cm{sup 2} and V{sub oc} of up to 664 mV. We observe an increase in cell efficiency of 0.8% absolute for the cells compared to 18.6% efficient reference solar cells featuring a full-area aluminum back surface field. To our knowledge, the energy conversion efficiency of 19.4% is the best value reported so far for large area screen-printed solar cells. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Boron doped Si rich oxide/SiO{sub 2} and silicon rich nitride/SiN{sub x} bilayers on molybdenum-fused silica substrates for vertically structured Si quantum dot solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Ziyun, E-mail: z.lin@unsw.edu.au; Wu, Lingfeng; Jia, Xuguang; Zhang, Tian; Puthen-Veettil, Binesh; Yang, Terry Chien-Jen; Conibeer, Gavin; Perez-Wurfl, Ivan [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Building H6, Tyree Energy Technologies Building, Kensington, New South Wales 2052 (Australia)

    2015-07-28

    Vertically structured Si quantum dots (QDs) solar cells with molybdenum (Mo) interlayer on quartz substrates would overcome current crowding effects found in mesa-structured cells. This study investigates the compatibility between boron (B) doped Si QDs bilayers and Mo-fused silica substrate. Both Si/SiO{sub 2} and Si/SiN{sub x} based QDs bilayers were studied. The material compatibility under high temperature treatment was assessed by examining Si crystallinity, microstress, thin film adhesion, and Mo oxidation. It was observed that the presence of Mo interlayer enhanced the Si QDs size confinement, crystalline fraction, and QDs size uniformity. The use of B doping was preferred compared to phosphine (PH{sub 3}) doping studied previously in terms of better surface and interface properties by reducing oxidized spots on the film. Though crack formation due to thermal mismatch after annealing remained, methods to overcome this problem were proposed in this paper. Schematic diagram to fabricate full vertical structured Si QDs solar cells was also suggested.

  17. Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Luo, P.Q. [Solar Energy Institute, Department of Physics, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240 (China)], E-mail: robt@sjtu.edu.cn; Zhou, Z.B. [Solar Energy Institute, Department of Physics, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240 (China)], E-mail: zbzhou@sjtu.edu.cn; Chan, K.Y. [Thin Film Laboratory, Faculty of Engineering, Multimedia University, Jalan Multimedia, Cyberjaya 63100, Selangor (Malaysia); Tang, D.Y.; Cui, R.Q.; Dou, X.M. [Solar Energy Institute, Department of Physics, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240 (China)

    2008-12-30

    Hydrogenated nanocrystalline silicon (nc-Si:H) grown by hot-wire chemical vapor deposition (HWCVD) has recently drawn significant attention in the area of thin-film large area optoelectronics due to possibility of high deposition rate. We report on the effects of diborane (B{sub 2}H{sub 6}) doping ratio on the microstructural and optoelectrical properties of the p-type nc-Si:H thin films grown by HWCVD at low substrate temperature of 200 deg. C and with high hydrogen dilution ratio of 98.8%. An attempt has been made to elucidate the boron doping mechanism of the p-type nc-Si:H thin films deposited by HWCVD and the correlation between the B{sub 2}H{sub 6} doping ratio, crystalline volume fraction, optical band gap and dark conductivity.

  18. Characterization of boron doped nanocrystalline diamonds

    Energy Technology Data Exchange (ETDEWEB)

    Peterlevitz, A C; Manne, G M; Sampaio, M A; Quispe, J C R; Pasquetto, M P; Iannini, R F; Ceragioli, H J; Baranauskas, V [Faculdade de Engenharia Eletrica e Computacao, Departamento de Semicondutores, Instrumentos e Fotonica, Universidade Estadual de Campinas, UNICAMP, Av. Albert Einstein N.400, 13083-852 Campinas SP Brasil (Brazil)], E-mail: vitor.baranauskas@gmail.com

    2008-03-15

    Nanostructured diamond doped with boron was prepared using a hot-filament assisted chemical vapour deposition system fed with an ethyl alcohol, hydrogen and argon mixture. The reduction of the diamond grains to the nanoscale was produced by secondary nucleation and defects induced by argon and boron atoms via surface reactions during chemical vapour deposition. Raman measurements show that the samples are nanodiamonds embedded in a matrix of graphite and disordered carbon grains, while morphological investigations using field electron scanning microscopy show that the size of the grains ranges from 20 to 100 nm. The lowest threshold fields achieved were in the 1.6 to 2.4 V/{mu}m range.

  19. XPS analysis of boron doped heterofullerenes

    Energy Technology Data Exchange (ETDEWEB)

    Schnyder, B.; Koetz, R. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muhr, H.J.; Nesper, R. [ETH Zurich, Zurich (Switzerland)

    1997-06-01

    Boron heterofullerenes were generated through arc-evaporation of doped graphite rods in a helium atmosphere. According to mass spectrometric analysis only mono-substituted fullerenes like C{sub 59}B, C{sub 69}B and higher homologues together with a large fraction of higher undoped fullerenes were extracted and enriched when pyridine was used as the solvent. XPS analysis of the extracts indicated the presence of two boron species with significantly different binding energies. One peak was assigned to borid acid. The second one corresponds to boron in the fullerene cage, which is mainly C{sub 59}B, according to the mass spectrum. This boron is in a somewhat higher oxidation state than that of ordinary boron-carbon compounds. The reported synthesis and extraction procedure opens a viable route for production of macroscopic amounts of these compounds. (author) 2 figs., 1 tab., 7 refs.

  20. Electro-catalytic Oxidation of Humidity Condensate Wastewater at Boron-doped Diamond in Simulated Space Station.%BDD电催化氧化处理模拟空间站冷凝废水的实验研究

    Institute of Scientific and Technical Information of China (English)

    王传增; 余青霓; 周抗寒; 陈善广; 孙德智

    2011-01-01

    目的 为验证以硼掺杂的金刚石电极(BDD)作为阳极电催化氧化处理空间站中产生的冷凝废水的技术适用性.方法 比较了分别以BDD,PbO2和RuO2作为阳极去除模拟冷凝水中TOC的性能,并单独考察BDD作为阳极时的槽电压和通O2等条件对TOC去除的影响.结果 BDD阳极的电催化氧化性能要远好于另外两种电极;增加槽电压有利于提高TOC去除率,但同时也导致了废热、析氢析氧副反应的增加,实际应用中要考虑两者的平衡点进行槽电压的选择;O2的通入加快了传质,提高了醇类向酸的转化,但降低了矿化效率;能耗需求分析显示该工艺技术能够达到节省能耗及保证水质的要求.结论 初步的实验结果显示采用BDD电催化氧化处理冷凝废水是技术可行的.%Objective To verify the feasibility of humidity condensate wastewater treatment by electro-catalytic oxidation at boron-doped diamond (BDD) in space station. Methods We utilized BDD, PbO2 and RuO2 as the anode to oxidize the simulated humidity condensate wastewater. We also investigated the effects of cell voltage and O2 feeding on TOC removal with BDD anode. Results The performance of BDD anode electro-catalytic oxidation was much better than the other two electrodes. The increase of cell voltage was conducive for TOC removal. It also increased the waste heat and occurrences of side reaction such as oxygen and hydrogen production. The optimum cell voltage should be selected by taking the equilibrium point into consideration. The feeding of 02 accelerated mass transfer, improved the conversion of alcohols to the acids, but decreased the mineralization efficiency. The energy consumption demand analysis for the process showed that it could save energy consumption and also meet the requirements of water quality. Conclusion The results demonstrate that BDD electro-catalytic oxidation is feasible for the treatment of humidity condensate wastewater.

  1. Silicon superconducting quantum interference device

    Energy Technology Data Exchange (ETDEWEB)

    Duvauchelle, J. E.; Francheteau, A.; Marcenat, C.; Lefloch, F., E-mail: francois.lefloch@cea.fr [Université Grenoble Alpes, CEA - INAC - SPSMS, F-38000 Grenoble (France); Chiodi, F.; Débarre, D. [Université Paris-sud, CNRS - IEF, F-91405 Orsay - France (France); Hasselbach, K. [Université Grenoble Alpes, CNRS - Inst. Néel, F-38000 Grenoble (France); Kirtley, J. R. [Center for probing at nanoscale, Stanford University, Palo Alto, California 94305-4045 (United States)

    2015-08-17

    We have studied a Superconducting Quantum Interference Device (SQUID) made from a single layer thin film of superconducting silicon. The superconducting layer is obtained by heavily doping a silicon wafer with boron atoms using the gas immersion laser doping technique. The SQUID is composed of two nano-bridges (Dayem bridges) in a loop and shows magnetic flux modulation at low temperature and low magnetic field. The overall behavior shows very good agreement with numerical simulations based on the Ginzburg-Landau equations.

  2. The heavily polluted atmosphere of the DAZ white dwarf GALEX J193156.8+011745

    CERN Document Server

    Vennes, S; Nemeth, P

    2010-01-01

    We report on the discovery of a new heavily polluted white dwarf. The DAZ white dwarf GALEX J193156.8+011745 was identified in a joint GALEX/GSC survey of ultraviolet-excess objects. Optical spectra obtained at ESO NTT show strong absorption lines of magnesium and silicon and a detailed abundance analysis based on VLT-Kueyen UVES spectra reveal super-solar abundances of silicon and magnesium, and near-solar abundances of oxygen, calcium, and iron. The overall abundance pattern bears the signature of ongoing accretion onto the white dwarf atmosphere. The infrared spectral energy distribution shows an excess in the H and K bands likely associated with the accretion source.

  3. High mechanical Q-factor measurements on silicon bulk samples

    Energy Technology Data Exchange (ETDEWEB)

    Nawrodt, R; Zimmer, A; Koettig, T; Schwarz, C; Heinert, D; Hudl, M; Neubert, R; Thuerk, M; Nietzsche, S; Vodel, W; Seidel, P [Friedrich-Schiller-Universitaet, Institut fuer Festkoerperphysik, Helmholtzweg 5, D-07743 Jena (Germany); Tuennermann, A [Friedrich-Schiller-Universitaet, Institut fuer Angewandte Physik, Max-Wien-Platz 1, D-07743 Jena (Germany)], E-mail: ronny.nawrodt@uni-jena.de

    2008-07-15

    Future gravitational wave detectors will be limited by different kinds of noise. Thermal noise from the coatings and the substrate material will be a serious noise contribution within the detection band of these detectors. Cooling and the use of a high mechanical Q-factor material as a substrate material will reduce the thermal noise contribution from the substrates. Silicon is one of the most interesting materials for a third generation cryogenic detector. Due to the fact that the coefficient of thermal expansion vanishes at 18 and 125 K the thermoelastic contribution to the thermal noise will disappear. We present a systematic analysis of the mechanical Q-factor at low temperatures between 5 and 300 K on bulk silicon (100) samples which are boron doped. The thickness of the cylindrical samples is varied between 6, 12, 24, and 75mm with a constant diameter of 3 inches. For the 75mm substrate a comparison between the (100) and the (111) orientation is presented. In order to obtain the mechanical Q-factor a ring-down measurement is performed. Thus, the substrate is excited to resonant vibrations by means of an electrostatic driving plate and the subsequent ring-down is recorded using a Michelson-like interferometer. The substrate itself is suspended as a pendulum by means of a tungsten wire loop. All measurements are carried out in a special cryostat which provides a temperature stability of better than 0.1K between 5 and 300K during the experiment. The influence of the suspension on the measurements is experimentally investigated and discussed. At 5.8K a highest Q-factor of 4.5 x 10{sup 8} was achieved for the 14.9 kHz mode of a silicon (100) substrate with a diameter of 3 inches and a thickness of 12 mm.

  4. A study of ZnO:B films for thin film silicon solar cells

    Science.gov (United States)

    Yin, J.; Zhu, H.; Wang, Y.; Wang, Z.; Gao, J.; Mai, Y.; Ma, Y.; Wan, M.; Huang, Y.

    2012-10-01

    Boron doped zinc oxide (ZnO:B) films with different thicknesses were prepared with low pressure chemical vapor deposition (LPCVD) technique and implemented in thin film silicon solar cells as front and back electrodes. It is found that thick back ZnO:B film electrode in thin film silicon solar cells leads to a high fill factors (FF), which is attributed to an improvement of the electrical properties of the thick ZnO:B films, and in the meanwhile a slightly low short circuit currents (Jsc) due to a high light absorption in the thick back ZnO:B films. Differently, the thicker front ZnO:B film electrodes result in a high Jsc but a low FF of solar cells compared to the thinner ones. The low FF of the solar cells may be caused by the local shunt originated from the pinholes or by the cracks (zones of non-dense material) formed in particular in microcrystalline silicon materials deposited on rough front ZnO:B films. As to the high Jsc, it is expected to be due to a good light trapping effect inside solar cells grown on rough front ZnO:B films. Moreover, the application of high reflective polyvinyl butyral (PVB) foils effectively enhances the utilization of incident light in solar cells. By optimizing deposition process of the ZnO:B films, high efficiencies of 8.8% and 10% for single junction thin film amorphous silicon solar cells (a-Si:H, intrinsic layer thickness < 200 nm) and amorphous/microcrystalline silicon tandem solar cells (a-Si:H/μc-Si:H, intrinsic amorphous silicon layer thickness < 220 nm), respectively, are achieved.

  5. Full DFT-D description of a nanoporous supramolecular network on a silicon surface

    Science.gov (United States)

    Boukari, Khaoula; Duverger, Eric; Sonnet, Philippe

    2013-02-01

    We present a full density-functional-theory study taking into account the van der Waals interactions of a 2D supramolecular network adsorbed on the Si(111)√3x√3R30°-boron surface denoted SiB. We show that, contrarily to the previous calculations [B. Baris, V. Luzet, E. Duverger, Ph. Sonnet, F. Palmino, and F. Chérioux, Angew. Chem., Int. Ed. 50, 4094 (2011)], 10.1002/anie.201100332 molecule-molecule interactions are attractive, thanks to van der Waals corrections which are essential to describe such systems. We confirm the importance of the substrate effect to achieve the molecular network on the boron doped silicon surface without covalent bond. Our simulated STM images, calculated in the framework of the bSKAN code, give better agreement with the experimental STM images than those obtained by the integrated LDOS calculations within the Tersoff-Hamann approximation. The tungsten tip presence is essential to retrieve three paired lobes as observed experimentally. The observed protrusions arise from the phenyl arms located above silicon adatoms.

  6. Silicon ribbon growth by a capillary action shaping technique. Quarterly technical progress report No. 2

    Energy Technology Data Exchange (ETDEWEB)

    Schwuttke, G.H.; Ciszek, T.F.; Kran, A.

    1975-01-01

    Progress during the second quarter of the contractual effort is described. The work performed related mainly to ribbon growth by a capillary action shaping technique and to ribbon characterization. Actual progress in the crystal growth area includes the evaluation of 10 potential die materials other than carbon and the process development for 25-mm-wide ribon. From the die study it is concluded that boron carbide, silicon carbide, and silicon nitride may warrant further investigation as die materials. Process development for 25-mm ribbon growth resulted in ribbons of superior surface quality. Potential ribbongrowth problems encountered and discussed include a boron doping anomaly and frozen-in stresses in ribbons. The characterization effort concentrated on the development of a solar-cell process to be used for ribbon characterization. Material requirements and detailed process procedures are given. Solar cells fabricated by this process are compared with commercially available solar cells and compare favorably. A transmission electron microscopy study of planar boundaries frequently observed in ribbon crystals is reported. (auth)

  7. Tailored emitter, low-resistivity, ion-implanted silicon solar cells

    Science.gov (United States)

    Minnucci, J. A.; Kirkpatrick, A. R.; Matthei, K. W.

    1980-01-01

    Open-circuit voltages as high as 0.645 V (AM0, 25 C) have been obtained by a new process developed for low-resistivity silicon. The process utilizes high-dose phosphorus implantation followed by furnace annealing and simultaneous oxide growth. The effect of the thermally grown oxide is a reduction of surface recombination velocity; the oxide also acts as a moderately efficient antireflection (AR) coating. Boron-doped, float-zone silicon with resistivities from 0.1 to 1.0 (omega)(cm) has been processed according to this sequence; results show that the highest open-circuit voltage is obtained with 0.1(omega)(cm) starting material. The effects of Auger recombination and bandgap narrowing caused by high doping concentrations in the n(+)junction region have been investigated by implanting phosphorus over a wide range of dose levels. The effects of emitter-phosphorus concentrations tailored to optimize electric fields in the emitter have also been investigated.

  8. Microscopic structure and reorientation kinetics of B-H complexes in silicon

    Science.gov (United States)

    Noya, José C.; Herrero, Carlos P.; Ramírez, Rafael

    1997-12-01

    Structural and dynamical properties of hydrogen and deuterium in boron-doped silicon have been studied by the path-integral Monte Carlo method as a function of temperature in the range between 30 and 400 K. The Si-Si and Si-B interactions were modeled by Stillinger-Weber-type potentials, and the Si-H and B-H interactions were parametrized by following the results of earlier pseudopotential-density-functional calculations for this system. Impurity energy, nuclei delocalization, and lattice relaxation are analyzed, the latter resulting to be mass dependent. The reorientation rate of the complex is obtained from quantum transition-state theory. A break in the slope of the Arrhenius plot for the jump rate of hydrogen is obtained at T~60 K, indicating a crossover from thermally activated quasiclassical motion over a barrier to thermally assisted quantum tunneling, in good agreement with previous experimental results. For deuterium, this deviation from an Arrhenius law is found at T~35 K. Both the impurity and the host nuclei are treated quantum mechanically, and it is shown that the defect complex undergoing quantum tunneling consists of hydrogen, boron, and the nearest silicon atoms.

  9. Two-dimensional numerical simulation of boron diffusion for pyramidally textured silicon

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Fa-Jun, E-mail: Fajun.Ma@nus.edu.sg; Duttagupta, Shubham [Solar Energy Research Institute of Singapore (SERIS), National University of Singapore, 7 Engineering Drive 1, 117574 (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117576 (Singapore); Shetty, Kishan Devappa; Meng, Lei; Hoex, Bram; Peters, Ian Marius [Solar Energy Research Institute of Singapore (SERIS), National University of Singapore, 7 Engineering Drive 1, 117574 (Singapore); Samudra, Ganesh S. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117576 (Singapore); Solar Energy Research Institute of Singapore (SERIS), National University of Singapore, 7 Engineering Drive 1, 117574 (Singapore)

    2014-11-14

    Multidimensional numerical simulation of boron diffusion is of great relevance for the improvement of industrial n-type crystalline silicon wafer solar cells. However, surface passivation of boron diffused area is typically studied in one dimension on planar lifetime samples. This approach neglects the effects of the solar cell pyramidal texture on the boron doping process and resulting doping profile. In this work, we present a theoretical study using a two-dimensional surface morphology for pyramidally textured samples. The boron diffusivity and segregation coefficient between oxide and silicon in simulation are determined by reproducing measured one-dimensional boron depth profiles prepared using different boron diffusion recipes on planar samples. The established parameters are subsequently used to simulate the boron diffusion process on textured samples. The simulated junction depth is found to agree quantitatively well with electron beam induced current measurements. Finally, chemical passivation on planar and textured samples is compared in device simulation. Particularly, a two-dimensional approach is adopted for textured samples to evaluate chemical passivation. The intrinsic emitter saturation current density, which is only related to Auger and radiative recombination, is also simulated for both planar and textured samples. The differences between planar and textured samples are discussed.

  10. Study of back reflectors for thin film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, H.; Mai, Y. [Baoding Tianwei Solarfilms Co., Ltd., Baoding 071051 (China); Wan, M. [Department of Chemistry and Material Science, Hunan Institute of Humanities, Science and Technology, Loudi 417000 (China); Gao, J.; Wang, Y.; He, T.; Feng, Y.; Yin, J.; Du, J.; Wang, J.; Sun, R. [Baoding Tianwei Solarfilms Co., Ltd., Baoding 071051 (China); Huang, Y., E-mail: y.huang@btw-solarfilms.com [Baoding Tianwei Solarfilms Co., Ltd., Baoding 071051 (China)

    2013-07-31

    In this study, the reflection properties of transparent conductive oxide (TCO) films i.e. aluminum doped zinc oxide (ZnO:Al) and boron doped zinc oxide (ZnO:B) films plus aluminum (Al) films or white polyvinyl butyral (PVB) foils, which are usually used as the combined back reflectors of thin film silicon solar cells, are investigated. Sputtered ZnO:Al films were etched in diluted hydrochloric acid (1%) to achieve rough surface structures while textured ZnO:B films were directly prepared by a low pressure chemical vapor deposition technique. It is found that the rough TCO/Al reflectors show a low total reflection, which is mainly due to the parasitic absorption by the surface plasmons at the rough TCO/Al interfaces as well as the absorption in the TCO films. Differently, the rough TCO/white PVB foil reflectors display a slightly high light reflection regardless of the influence of the rough interface without the excitation of surface plasmons. Thus, the TCO/white PVB foil back reflectors could be a good candidate with respect to light utilization when they are applied in thin film silicon solar cells. - Highlights: • White polyvinyl butyral and transparent conductive oxide materials are used. • The reflection properties of TCO/Al and TCO/white PVB foil reflectors are studied. • The ZnO:Al and ZnO:B films are used as two types of TCO materials. • TCO/white PVB foil reflector shows a high reflection compared to TCO/Al reflector.

  11. A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel

    Institute of Scientific and Technical Information of China (English)

    Zhang Jian; Han Yu; Chan Mansun; He Jin; Zhou Xing-Ye; Zhang Li-Ning; Ma Yu-Tao; Chen Qin; Zhang Xu-Kai; Yang Zhang; Wang Rui-Fei

    2012-01-01

    A unified charge-based model for fully depleted silicon-on-insulator (SOI) metal-oxide semiconductor field-effect transistors (MOSFETs) is presented.The proposed model is accurate and applicable from intrinsic to heavily doped channels with various structure parameters.The framework starts from the one-dimensional Poisson-Boltzmann equation,and based on the full depletion approximation,an accurate inversion charge density equation is obtained.With the inversion charge density solution,the unified drain current expression is derived,and a unified terminal charge and intrinsic capacitance model is also derived in the quasi-static case.The validity and accuracy of the presented analytic model is proved by numerical simulations.

  12. Boron induced charge traps near the interface of Si/SiO{sub 2} probed by second harmonic generation

    Energy Technology Data Exchange (ETDEWEB)

    Park, Heungman; Varga, Kalman; Tolk, Norman [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States); Qi, Jingbo [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States); National High Magnetic Field Laboratory, Tallahassee, Florida 32310 (United States); Xu, Ying [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States); Zomega Terahertz Corporation, Troy, New York 12180 (United States); Weiss, Sharon M. [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States); Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235 (United States); Rogers, Bridget R. [Department of Chemical and Biomolecular Engineering, Nashville, Vanderbilt University, Tennessee 37235 (United States); Luepke, Gunter [Department of Applied Science, College of William and Mary, Williamsburg, Virginia 23187 (United States)

    2010-08-15

    We review recent second harmonic generation (SHG) measurements for highly boron-doped Si/SiO{sub 2} systems. Using electric field sensitive time-dependent SHG (TD-SHG), we determined that the direction of the initial DC electric field at the interface induced by boron induced charge traps is from oxide to silicon thus demonstrating that the boron induced charge traps in the oxide are positively charged. For a thin oxide ({proportional_to}2 nm) both boron traps and O{sub 2} surface oxide traps contribute. However, for a highly boron-doped Si/SiO{sub 2} sample with a thick thermally grown oxide (thickness: 12 nm), the TD-SHG signal exhibits a monotonic decrease arising from filling only the boron charge traps. By fitting our data, we show that the interface effective susceptibility vertical stroke {chi}{sup (2)} vertical stroke is heavily dependent on doping concentration. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  13. Quasi-periodic Fibonacci and periodic one-dimensional hypersonic phononic crystals of porous silicon: Experiment and simulation

    Energy Technology Data Exchange (ETDEWEB)

    Aliev, Gazi N., E-mail: g.aliev@bath.ac.uk; Goller, Bernhard [Department of Physics, University of Bath, Bath BA2 7AY (United Kingdom)

    2014-09-07

    A one-dimensional Fibonacci phononic crystal and a distributed Bragg reflector were constructed from porous silicon. The structures had the same number of layers and similar acoustic impedance mismatch, and were electrochemically etched in highly boron doped silicon wafers. The thickness of the individual layers in the stacks was approximately 2 μm. Both types of hypersonic band gap structure were studied by direct measurement of the transmittance of longitudinal acoustic waves in the 0.1–2.6 GHz range. Acoustic band gaps deeper than 50 dB were detected in both structures. The experimental results were compared with model calculations employing the transfer matrix method. The acoustic properties of periodic and quasi-periodic structures in which half-wave retarding bi-layers do not consist of two quarter-wave retarding layers are discussed. The strong correlation between width and depth of gaps in the transmission spectra is demonstrated. The dominant mechanisms of acoustic losses in porous multilayer structures are discussed. The elastic constants remain proportional over our range of porosity, and hence, the Grüneisen parameter is constant. This simplifies the expression for the porosity dependence of the Akhiezer damping.

  14. Effective surface passivation of p-type crystalline silicon with silicon oxides formed by light-induced anodisation

    Energy Technology Data Exchange (ETDEWEB)

    Cui, Jie, E-mail: j.cui@unsw.edu.au [School of Photovoltaic and Renewable Energy Engineering, The University of New South Wales, Sydney 2052 (Australia); Grant, Nicholas [Centre for Sustainable Energy Systems, Australian National University, Canberra, A.C.T. 0200 (Australia); Lennon, Alison [School of Photovoltaic and Renewable Energy Engineering, The University of New South Wales, Sydney 2052 (Australia)

    2014-12-30

    Highlights: • The surface passivation by anodic SiO{sub 2} formed by light-induced anodisation is investigated. • The anodic SiO{sub 2} grows lower temperatures with shorter growth times. After annealing in oxygen and then forming gas the effective minority carrier lifetime is increased to 150 μs. • It shows a very low positive Q{sub eff} of 3.4 × 10{sup 11} cm{sup −2}, a moderate D{sub it} of 6 × 10{sup 11} eV{sup −1} cm{sup −2}. • It has a very low leakage current density suggesting its application in solar cell as a functional dielectric. - Abstract: Electronic surface passivation of p-type crystalline silicon by anodic silicon dioxide (SiO{sub 2}) was investigated. The anodic SiO{sub 2} was grown by light-induced anodisation (LIA) in diluted sulphuric acid at room temperature, a process that is significantly less-expensive than thermal oxidation which is widely-used in silicon solar cell fabrication. After annealing in oxygen and then forming gas at 400 °C for 30 min, the effective minority carrier lifetime of 3–5 Ω cm, boron-doped Czochralski silicon wafers with a phosphorus-doped 80 Ω/□ emitter and a LIA anodic SiO{sub 2} formed on the p-type surface was increased by two orders of magnitude to 150 μs. Capacitance–voltage measurements demonstrated a very low positive charge density of 3.4 × 10{sup 11} cm{sup −2} and a moderate density of interface states of 6 × 10{sup 11} eV{sup −1} cm{sup −2}. This corresponded to a silicon surface recombination velocity of 62 cm s{sup −1}, which is comparable with values reported for other anodic SiO{sub 2} films, which required higher temperatures and longer growth times, and significantly lower than oxides grown by chemical vapour deposition techniques. Additionally, a very low leakage current density of 3.5 × 10{sup −10} and 1.6 × 10{sup −9} A cm{sup −2} at 1 and −1 V, respectively, was measured for LIA SiO{sub 2} suggesting its potential application as insulation layer in

  15. Almost Sure Central Limit Theorems for Heavily Trimmed Sums

    Institute of Scientific and Technical Information of China (English)

    Fang WANG; Shi Hong CHENG

    2004-01-01

    We obtain an almost sure central limit theorem (ASCLT) for heavily trimmed sums. We also prove a function-typed ASCLT under the same conditions that assure measurable functions to satisfy the ASCLT for the partial sums of i.i.d. random variables with EX1 = 0, EX12 = 1.

  16. Explosive phenomena in heavily irradiated NaCl

    NARCIS (Netherlands)

    denHartog, HW; Vainshtein, DI; Matthews, GE; Williams, RT

    1997-01-01

    In heavily irradiated NaCl crystals explosive phenomena can be initiated during irradiation or afterwards when samples are heated to temperatures between 100 and 250 degrees C. During irradiation of NaCl Na and Cl-2 precipitates and void structures are produced along with the accumulation of stored

  17. The CMS silicon tracker

    Energy Technology Data Exchange (ETDEWEB)

    Focardi, E. E-mail: focardi@pi.infn.it; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bosi, F.; Borrello, L.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Buffini, A.; Busoni, S.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B; Ciampolini, P.; Civinini, C.; Creanza, D.; D' Alessandro, R.; Da Rold, M.; Demaria, N.; De Palma, M.; Dell' Orso, R.; Della Marina, R.; Dutta, S.; Eklund, C.; Feld, L.; Fiore, L.; French, M.; Freudenreich, K.; Frey, A.; Fuertjes, A.; Giassi, A.; Giorgi, M.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammarstrom, R.; Hebbeker, T.; Honma, A.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Leubelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B.Mc; Meschini, M.; Messineo, A.; Migliore, E.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Papi, A.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Radicci, V.; Raffaelli, F.; Raymond, M.; Rizzo, F.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Surrow, B.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Yahong, Li; Watts, S.; Wittmer, B

    2000-10-11

    This paper describes the Silicon microstrip Tracker of the CMS experiment at LHC. It consists of a barrel part with 5 layers and two endcaps with 10 disks each. About 10 000 single-sided equivalent modules have to be built, each one carrying two daisy-chained silicon detectors and their front-end electronics. Back-to-back modules are used to read-out the radial coordinate. The tracker will be operated in an environment kept at a temperature of T=-10 deg. C to minimize the Si sensors radiation damage. Heavily irradiated detectors will be safely operated due to the high-voltage capability of the sensors. Full-size mechanical prototypes have been built to check the system aspects before starting the construction.

  18. Electron beam silicon purification

    Energy Technology Data Exchange (ETDEWEB)

    Kravtsov, Anatoly [SIA ' ' KEPP EU' ' , Riga (Latvia); Kravtsov, Alexey [' ' KEPP-service' ' Ltd., Moscow (Russian Federation)

    2014-11-15

    Purification of heavily doped electronic grade silicon by evaporation of N-type impurities with electron beam heating was investigated in process with a batch weight up to 50 kilos. Effective temperature of the melt, an indicative parameter suitable for purification process characterization was calculated and appeared to be stable for different load weight processes. Purified material was successfully approbated in standard CZ processes of three different companies. Each company used its standard process and obtained CZ monocrystals applicable for photovoltaic application. These facts enable process to be successfully scaled up to commercial volumes (150-300 kg) and yield solar grade silicon. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Test beam results of a heavily irradiated Current Injected Detector (CID)

    CERN Document Server

    Harkonen, J; Tuominen, E; Moilanen, H; Maenpaa, T; Verbitskaya, E; Eremin, V; Czellar, S; Dierlamm, A; Tuovinen, E; Lampen, T; Frey, M; Li, Z; Luukka, P

    2010-01-01

    A heavily irradiated (3 x 10(15) 1 MeV n(eq)/cm(2)) Current Injected Detector (CID) was tested with 225 GeV muon beam at CERN H2 beam line. In the CID concept the current is limited by the space charge. The injected carriers will be trapped by the deep levels and this induces a stable electric field through the entire bulk regardless of the irradiation fluence the detector has been exposed to. The steady-state density of the trapped charge is defined by the balance between the trapping and the emission rates of charge carriers (detrapping). Thus, the amount of charge injection needed for the electric field stabilization depends on the temperature. AC-coupled 16 cm(2) detector was processed on high resistivity n-type magnetic Czochralski silicon, and it had 768 strips, 50 mu m pitch, 10 mu m strip width and 3.9 cm strip length. The beam test was carried out using a silicon beam telescope that is based on the CMS detector readout prototype components, APV25 readout chips, and eight strip sensors made by Hamamat...

  20. The spectral response and efficiency of heavily doped emitters in silicon photovoltaic devices

    Science.gov (United States)

    Jain, S. C.; Tsao, J.; Kerwin, W. J.

    1987-09-01

    An analytical model of the spectral response and efficiency of an emitter is developed. The model is valid for an emitter of any thickness or any doping concentration and profiles. Explicit expression for the spectral response and efficiency of the emitter are derived. They take into account the space dependent mobility μp, band gap narrowing ΔEg, lifetime and electric field. The expression reduces to simpler forms for quasi-transparent and transparent emitters. It is found that unlike a dark emitter, the effect of electric field on the behavior of the illuminated emitter is not negligible. The effect of change in ΔEg and μp models on the spectral response and efficiency of the emitter is discussed. An increase in ΔEg degrades the performance of the emitter. An increase in μp at high doping also degrades the behavior but only if the surface recombination velocity Sp is large. If Sp is very small, an increase of μp improves the spectral response and the efficiency of the emitter. The results calculated theoretically are in good agreement with the experimental results of Ref. [25] both for thin and thick emitters except for λ ≤ 0.4 μm and λ > 1.0 μm. This discrepancy is attributed to the uncertainties in the experimental values of α at these wavelengths. It is shown that the value of μp at high dopings can be determined from the spectral response measurements provided that the value of Sp can be determined accurately from other independent measurements.

  1. Semiconductor Grade, Solar Silicon Purification Project. [photovoltaic solar energy conversion

    Science.gov (United States)

    Ingle, W. M.; Rosler, R. S.; Thompson, S. W.; Chaney, R. E.

    1979-01-01

    A low cost by-product, SiF4, is reacted with mg silicon to form SiF2 gas which is polymerized. The (SiF2)x polymer is heated forming volatile SixFy homologues which disproportionate on a silicon particle bed forming silicon and SiF4. The silicon analysis procedure relied heavily on mass spectroscopic and emission spectroscopic analysis. These analyses demonstrated that major purification had occured and some samples were indistinguishable from semiconductor grade silicon (except possibly for phosphorus). However, electrical analysis via crystal growth reveal that the product contains compensated phosphorus and boron.

  2. Elastic Softening of Surface Acoustic Wave Caused by Vacancy Orbital in Silicon Wafer

    Science.gov (United States)

    Mitsumoto, Keisuke; Akatsu, Mitsuhiro; Baba, Shotaro; Takasu, Rie; Nemoto, Yuichi; Goto, Terutaka; Yamada-Kaneta, Hiroshi; Furumura, Yuji; Saito, Hiroyuki; Kashima, Kazuhiko; Saito, Yoshihiko

    2014-03-01

    We have performed surface acoustic wave (SAW) measurements to examine vacancies in a surface layer of a boron-doped silicon wafer currently used in semiconductor industry. A SAW with a frequency of fs = 517 MHz was optimally generated by an interdigital transducer with a comb gap of w=2.5 µm on a piezoelectric ZnO film deposited on the (001) silicon surface. The SAW propagating along the [100] axis with a velocity of vs=4.967 km/s is in agreement with the Rayleigh wave, which shows an ellipsoidal trajectory motion in the displacement components ux and uz within a penetration depth of λp = 3.5 µm. The elastic constant Cs of the SAW revealed the softening of ΔCs/Cs = 1.9 × 10-4 below 2 K down to 23 mK. Applied magnetic fields of up to 2 T completely suppress the softening. The quadrupole susceptibilities based on the coupling between the electric quadrupoles Ou, Ov, and Ozx of the vacancy orbital consisting of Γ8-Γ7 states and the symmetry strains ɛu, ɛv, and ɛzx associated with the SAW account for the softening and its field dependence on Cs. We deduced a low vacancy concentration N = 3.1 × 1012/cm3 in the surface layer within λp = 3.5 µm of the silicon wafer. This result promises an innovative technology for vacancy evaluation in the fabrication of high-density semiconductor devices in industry.

  3. Dopant Diffusion and Activation in Silicon Nanowires Fabricated by ex Situ Doping: A Correlative Study via Atom-Probe Tomography and Scanning Tunneling Spectroscopy.

    Science.gov (United States)

    Sun, Zhiyuan; Hazut, Ori; Huang, Bo-Chao; Chiu, Ya-Ping; Chang, Chia-Seng; Yerushalmi, Roie; Lauhon, Lincoln J; Seidman, David N

    2016-07-13

    Dopants play a critical role in modulating the electric properties of semiconducting materials, ranging from bulk to nanoscale semiconductors, nanowires, and quantum dots. The application of traditional doping methods developed for bulk materials involves additional considerations for nanoscale semiconductors because of the influence of surfaces and stochastic fluctuations, which may become significant at the nanometer-scale level. Monolayer doping is an ex situ doping method that permits the post growth doping of nanowires. Herein, using atom-probe tomography (APT) with subnanometer spatial resolution and atomic-ppm detection limit, we study the distributions of boron and phosphorus in ex situ doped silicon nanowires with accurate control. A highly phosphorus doped outer region and a uniformly boron doped interior are observed, which are not predicted by criteria based on bulk silicon. These phenomena are explained by fast interfacial diffusion of phosphorus and enhanced bulk diffusion of boron, respectively. The APT results are compared with scanning tunneling spectroscopy data, which yields information concerning the electrically active dopants. Overall, comparing the information obtained by the two methods permits us to evaluate the diffusivities of each different dopant type at the nanowire oxide, interface, and core regions. The combined data sets permit us to evaluate the electrical activation and compensation of the dopants in different regions of the nanowires and understand the details that lead to the sharp p-i-n junctions formed across the nanowire for the ex situ doping process.

  4. Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics

    Science.gov (United States)

    Frigerio, Jacopo; Ballabio, Andrea; Isella, Giovanni; Sakat, Emilie; Pellegrini, Giovanni; Biagioni, Paolo; Bollani, Monica; Napolitani, Enrico; Manganelli, Costanza; Virgilio, Michele; Grupp, Alexander; Fischer, Marco P.; Brida, Daniele; Gallacher, Kevin; Paul, Douglas J.; Baldassarre, Leonetta; Calvani, Paolo; Giliberti, Valeria; Nucara, Alessandro; Ortolani, Michele

    2016-08-01

    Heavily doped semiconductor thin films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in the 5 to 50 μ m wavelength range at least. In this work, we investigate the electrodynamics of heavily n -type-doped germanium epilayers at infrared frequencies beyond the assumptions of the Drude model. The films are grown on silicon and germanium substrates, are in situ doped with phosphorous in the 1017 to 1019 cm-3 range, then screened plasma frequencies in the 100 to 1200 cm-1 range were observed. We employ infrared spectroscopy, pump-probe spectroscopy, and dc transport measurements to determine the tunability of the plasma frequency. Although no plasmonic structures have been realized in this work, we derive estimates of the decay time of mid-infrared plasmons and of their figures of merit for field confinement and for surface plasmon propagation. The average electron scattering rate increases almost linearly with excitation frequency, in agreement with quantum calculations based on a model of the ellipsoidal Fermi surface at the conduction band minimum of germanium accounting for electron scattering with optical phonons and charged impurities. Instead, we found weak dependence of plasmon losses on neutral impurity density. In films where a transient plasma was generated by optical pumping, we found significant dependence of the energy relaxation times in the few-picosecond range on the static doping level of the film, confirming the key but indirect role played by charged impurities in energy relaxation. Our results indicate that underdamped mid-infrared plasma oscillations are attained in n -type-doped germanium at room temperature.

  5. Measurement of surface recombination velocity on heavily doped indium phosphide

    Science.gov (United States)

    Jenkins, Phillip; Ghalla-Goradia, Manju; Faur, Mircea; Faur, Maria; Bailey, Sheila

    1990-01-01

    Surface recombination velocity (SRV) on heavily doped n-type and p-type InP was measured as a function of surface treatment. For the limited range of substrates and surface treatments studied, SRV and surface stability depend strongly on the surface treatment. SRVs of 100,000 cm/sec in both p-type and n-type InP are obtainable, but in n-type the low-SRV surfaces were unstable, and the only stable surfaces on n-type had SRVs of more than 10to the 6th cm/sec.

  6. Electrochemical Decontamination of Painted and Heavily Corroded Metals

    Energy Technology Data Exchange (ETDEWEB)

    Marczak, S.; Anderson, J.; Dziewinski, J.

    1998-09-08

    The radioactive metal wastes that are generated from nuclear fuel plants and radiochemical laboratories are mainly contaminated by the surface deposition of radioactive isotopes. There are presently several techniques used in removing surface contamination involving physical and chemical processes. However, there has been very little research done in the area of soiled, heavily oxidized, and painted metals. Researchers at Los Alamos National Laboratory have been developing electrochemical procedures for the decontamination of bare and painted metal objects. These methods have been found to be effective on highly corroded as well as relatively new metals. This study has been successful in decontaminating projectiles and shrapnel excavated during environmental restoration projects after 40+ years of exposure to the elements. Heavily corroded augers used in sampling activities throughout the area were also successfully decontaminated. This process has demonstrated its effectiveness and offers several advantages over the present metal decontamination practices of media blasting and chemical solvents. These advantages include the addition of no toxic or hazardous chemicals, low operating temperature and pressure, and easily scaleable equipment. It is in their future plans to use this process in the decontamination of gloveboxes destined for disposal as TRU waste.

  7. Study of TL response in heavily irradiated rock salt

    Energy Technology Data Exchange (ETDEWEB)

    Ortega, X.; Dies, X. (Univ. Politecnica de Catalunya, Barcelona (Spain). Inst. de Tecniques Energetiques); Cuevas, C. de las (Barcelona Univ. (Spain))

    1993-01-01

    Within the framework of the CEC R and D Programme ''Management and Storage of Radioactive Waste'', the study of the generation of radiation damage in heavily irradiated rock salt is being carried out. This work describes the experiments carried out for the validation of the TL techniques, in the assessment of the phenomena related to the energy absorbed by the rock salt, due to the high levels of irradiation. The samples analysed are natural rock salt coming from the Sallent mine (Spain). The chemical composition of the rocks is, in all cases, higher than 90% NaCl, having small amounts of SO[sub 4], Mg, K, Br and Sr as major impurities. A first set of irradiations was performed at the laboratory with a source of [sup 137]Cs. The doses reached were lower than 20Gy. A second set of irradiations was performed at an industrial facility with a source of [sup 60]Co, achieving doses up to 2.5 MGy. Afterwards the irradiated samples were analysed with TL and optical absorption techniques. The results have facilitated a study of the glow curves, their evolution in time and the influence of the chemical composition, the absorbed dose, and the absorbed dose rate. These experiments have increased knowledge of the behaviour of heavily irradiated rock salt. (Author).

  8. Improved thermoelectric properties in heavily doped FeGa3

    Science.gov (United States)

    Ponnambalam, V.; Morelli, Donald T.

    2015-12-01

    FeGa3, a hybridization gap semiconductor, has been substituted with an n-type dopant Ge to form a series of compositions FeGa3-xGex. Electrical and thermal transport properties of these compositions have been studied. Change in carrier density (n) is evident from the Hall measurements. The carrier density (n) can be as high as ˜1021 cm-3 in these compositions. In order to study the role of heavy doping on the thermoelectric properties of FeGa3, an alloy series Fe1-yCoyGa3-xGex has also been synthesized with higher concentrations of Ge (x = 0.1-0.35) and Co (y = 0.1-0.5). From resistivity and Seebeck coefficient measurements, it appears that heavy doping is accomplished by the simultaneous substitutions of Ge and Co. The systematic change in both resistivity (ρ) and Seebeck coefficient (α) is possibly due to change in the carrier density (n). The power factor (PF) α2/ρ improves steadily with increasing carrier density and the best PF ˜1.1 mW/m K2 is observed for the heavily doped compositions at 875 K. In the alloy series Fe1-yCoyGa3-xGex, thermal conductivity is also reduced substantially due to point defect scattering. Due to higher power factors, the figure of merit ZT improves to 0.25 at 875 K for the heavily doped compositions.

  9. Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity

    Science.gov (United States)

    Steckenreiter, Verena; Walter, Dominic C.; Schmidt, Jan

    2017-03-01

    Based on contactless carrier lifetime measurements performed on p-type boron-doped Czochralski-grown silicon (Cz-Si) wafers, we examine the rate constant Rde of the permanent deactivation process of the boron-oxygen-related defect center as a function of the illumination intensity I at 170°C. While at low illumination intensities, a linear increase of Rde on I is measured, at high illumination intensities, Rde seems to saturate. We are able to explain the saturation by assuming that Rde increases proportionally with the excess carrier concentration Δ n and take the fact into account that at sufficiently high illumination intensities, the carrier lifetime decreases with increasing Δ n and hence the slope of Δ n (I) decreases, leading to an apparent saturation. Importantly, on low-lifetime Cz-Si samples no saturation of the deactivation rate constant is observed for the same illumination intensities, proving that the deactivation is stimulated by the presence of excess electrons and not directly by the photons.

  10. Manipulation of space charge in silicon by intentional thermal donor activation

    Institute of Scientific and Technical Information of China (English)

    E. TUOVINEN; J. H(A)RK(O)NEN; P. LUUKKA; E. TUOMINEN

    2006-01-01

    A quantitative study about the thermal activation of thermal donors (TD) in high resistivity magnetic Czochralski (MCz) silicon was carried out. The samples are p+/p/n+ diodes (active area 0.25 cm2, thickness 300 μm) made of MCz p-type Si wafers with the resistivity of about 2 kΩ-cm. The concentration of interstitial oxygen (Oi) in this material was measured by the Fourier transformation infrared (FTIR) spectroscopy method and it is 4.9×1017 cm-3. The TD activation was performed through an isochronal thermal treatment at 430 ℃ up to a total time of 120 min. The space charge density after each annealing step was extracted from capacitance-voltage (CV) measurements. The TD generation can be utilized in processing of silicon detectors (pixel, strip and drift detectors) that are used e.g. in space applications, high-energy physics experiments, and several visual imaging applications. If the starting material is boron-doped p-type high-resistivity Cz-Si, the TD generation process can be utilized in order to produce p+/n-/n+ detectors. The last thermal process step, i.e. the sintering of aluminum, is intentionally carried out at the temperature where TD's are created. Due to the generated donors, the p-type bulk will eventually be compensated to n-type bulk. Moreover, the full depletion voltage of detectors (Vfd) could be tailored between a wide range from 30 V up to almost 1 000 V by changing heat treatment duration at 400-450 ℃ from 20 to 120 min.

  11. A study of ZnO:B films for thin film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Yin, J.; Zhu, H.; Wang, Y.; Wang, Z.; Gao, J.; Mai, Y.; Ma, Y. [Baoding Tianwei Solarfilms Co., Ltd., 071051, Baoding (China); Wan, M. [Department of Chemistry and Material science, Hunan Institute of Humanities, Science and Technology, 417000, Loudi (China); Huang, Y., E-mail: y.huang@btw-solarfilms.com [Baoding Tianwei Solarfilms Co., Ltd., 071051, Baoding (China)

    2012-10-15

    Highlights: Black-Right-Pointing-Pointer ZnO:B films with different thicknesses were prepared with LPCVD technique. Black-Right-Pointing-Pointer The thicker ZnO:B back electrodes lead to higher FF but slightly lower J{sub sc.} Black-Right-Pointing-Pointer Back polyvinyl butyral (PVB) foils improves the utilization of incident light in solar cells. Black-Right-Pointing-Pointer The thicker ZnO:B front electrode films result in high J{sub sc} but lower FF. - Abstract: Boron doped zinc oxide (ZnO:B) films with different thicknesses were prepared with low pressure chemical vapor deposition (LPCVD) technique and implemented in thin film silicon solar cells as front and back electrodes. It is found that thick back ZnO:B film electrode in thin film silicon solar cells leads to a high fill factors (FF), which is attributed to an improvement of the electrical properties of the thick ZnO:B films, and in the meanwhile a slightly low short circuit currents (J{sub sc}) due to a high light absorption in the thick back ZnO:B films. Differently, the thicker front ZnO:B film electrodes result in a high J{sub sc} but a low FF of solar cells compared to the thinner ones. The low FF of the solar cells may be caused by the local shunt originated from the pinholes or by the cracks (zones of non-dense material) formed in particular in microcrystalline silicon materials deposited on rough front ZnO:B films. As to the high J{sub sc}, it is expected to be due to a good light trapping effect inside solar cells grown on rough front ZnO:B films. Moreover, the application of high reflective polyvinyl butyral (PVB) foils effectively enhances the utilization of incident light in solar cells. By optimizing deposition process of the ZnO:B films, high efficiencies of 8.8% and 10% for single junction thin film amorphous silicon solar cells (a-Si:H, intrinsic layer thickness < 200 nm) and amorphous/microcrystalline silicon tandem solar cells (a-Si:H/{mu}c-Si:H, intrinsic amorphous silicon layer

  12. A Mobile GIS Application to Heavily Resource-Constrained Devices

    Institute of Scientific and Technical Information of China (English)

    Robert P.Biuk-Aghai

    2004-01-01

    GIS applications to mobile devices are becoming increasingly popular, utilizing a di-verserange of devices. Many of these devices suffer from serious constraints in three main areas: processor speed, memory space and screen size. This paper presents a GIS application, called "MacauMap", that is intended for heavily resource-constrained handheld devices. MacauMap is a tourism-oriented map application of the Macau territory for PalmOS and Pocket PC personal digital assistants. It was designed to perform satisfactorily on devices with as little as 16 MHz processor speed, and requires only 500 KB available memory for the GIS application and all GIS data. Memory requirements are kept low through a specially designed data format. The main challenge of satisfactory map drawing speed is addressed through a variety of techniques that were developed for this application. The paper describes the application's data format, outlines the map drawing techniques, and points out the areas for future development.

  13. Dynamical conductivity of boron carbide: heavily damped plasma vibrations.

    Science.gov (United States)

    Werheit, Helmut; Gerlach, Guido

    2014-10-22

    The FIR reflectivity spectra of boron carbide, measured down to ω~10 cm(-1) between 100 and 800 K, are essentially determined by heavily damped plasma vibrations. The spectra are fitted applying the classical Drude-Lorentz theory of free carriers. The fitting Parameter Π=ωp/ωτ yields the carrier densities, which are immediately correlated with the concentration of structural defects in the homogeneity range. This correlation is proved for band-type and hopping conductivity. The effective mass of free holes in the valence band is estimated at m*/me~2.5. The mean free path of the free holes has the order of the cell parameters.

  14. 纳米金颗粒在掺硼金刚石薄膜电极表面的自组装及其电化学性能分析∗%Self-assembly of gold nanoparticles onto boron-doped diamond electrode and its electrochemical properties

    Institute of Scientific and Technical Information of China (English)

    崔凯; 汪家道; 冯东; 陈大融

    2015-01-01

    Citrate-coated gold nanoparticles (diameter about 18 nm)were absorbed onto boron-doped diamond (BDD)film electrode through a self-assembly process after the surface of the anodized BDD film was animated. By changing the pH of gold nanoparticles solution,we synthesized gold nanoparticles modified BDD electrode with uniform distribution and high coverage (about 30%) of gold nanoparticles.In the system of [Fe (CN)6 ]3 -/4- ,through AC impedance analysis and cyclic voltammetry analysis,we find that heterogeneous elec-tron transfer rate constant (K app )of gold nanoparticles modified BDD electrode increased from 2.8 × 10 -4 to 8.9×10 -4 .After the BDD electrode was modified with gold nanoparticles,the oxidation potential of dopamine (DA)reduced from 0.54 to 0.3 V,and the oxidation peak was improved,confirming that gold nanoparticles have catalytic effect on DA.%对阳极氧化后的掺硼金刚石(BDD)薄膜进行表面氨基化处理,使柠檬酸根包裹的纳米金颗粒(粒径约18 nm)自组装到 BDD 薄膜的表面.通过改变纳米金溶液的 pH 值,在 BDD 薄膜表面制备出二维形貌分布均匀且相对覆盖度高(约30%)的纳米金颗粒.在[Fe(CN)6]3-/4-体系中,通过循环伏安分析和交流阻抗分析实验发现,纳米金颗粒修饰后的 BDD 电极表面异相电子转移速率常数(K app )由2.8×10-4提高到8.9×10-4.纳米金颗粒修饰的 BDD 电极对多巴胺的氧化电位由0.54 V 减小到0.3 V,且氧化峰峰值得到提高,证实了纳米金颗粒对多巴胺的催化作用.

  15. Phenol degradation by anodic oxidation on boron-doped diamond electrode combining TiO2 Photocatalysis%掺硼金刚石电极结合二氧化钛光催化阳极氧化降解苯酚

    Institute of Scientific and Technical Information of China (English)

    戎非; 顾林娟; 邱烨静; 付德刚; 吴巍

    2010-01-01

    Boron-doped diamond (BDD) electrocatalysis is combined with photocatalysis using titanium dioxide (TiO2) as a catalyst to improve pollutant-oxidation efficiency. Phenol solution is chosen as model wastewater. Different methods involving BDD and/or TiO2 during the degradation processes are compared. Parameters such as the currency density and initial concentration are varied in order to determine their effects on the oxidation process. Moreover, the degradation kinetics of phenol is experimentally studied. The results reveal the superiority of series combination of BDD and TiO2, especially the treatment process of electrocatalysis and succedent photocatalysis, and the optimum working currency density for electrocatalysis is 25.48 mA/cm2. The removal rate decreases with the increase in the initial phenol concentration and the degradation reaction follows quasi-first-order kinetics equation.%采用二氧化钛光催化结合掺硼金刚石电催化来提高污染物氧化效率.以苯酚作为模型废水污染物,分别比较了采用BDD电催化和TiO2光催化以及两者结合方法的降解过程,研究了电流密度和初始浓度等条件对降解效果的影响,并进行了反应动力学讨论.实验结果表明:与单独处理相比, BDD和TiO2组合处理方法拥有较优的苯酚去除效果,尤其是先电解后光催化的方式,其最优工作电流密度为25.48 mA/cm2,并且随着苯酚初始浓度增加,去除率随之下降.动力学研究表明反应符合准一级动力学方程.

  16. Einstein's photoemission emission from heavily-doped quantized structures

    CERN Document Server

    Ghatak, Kamakhya Prasad

    2015-01-01

    This monograph solely investigates the Einstein's Photoemission(EP) from Heavily Doped(HD) Quantized Structures on the basis of newly formulated electron dispersion laws. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The EP in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields  that control the studies of such quantum effect devices. The suggestions for the experimental determinations of different important physical quantities in HD 2D and 3D materials  and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring   physical properties in the presence of intense light waves w...

  17. Taenia taeniaeformis: colonic hyperplasia in heavily infected rats.

    Science.gov (United States)

    Lagapa, Jose Trinipil; Oku, Yuzaburo; Kamiya, Masao

    2008-12-01

    Only one study previously mentioned the involvement of colon during Taenia taeniaeformis larvae infection in rats with inconsistent occurrence of lesions. Present study aimed to determine the consistency of histopathologic changes in colonic epithelia, and the proliferation of mucosal cells through BrdU and PCNA immunohistochemistry. Results demonstrated that crypt hyperplasia of the colon was found in all infected rats, although variable in degree even in a single tissue section. Cystic cavities were frequently seen in severely hyperplastic mucosa. Proliferative zone lengths were significantly increased and PCNA positive cells were observed throughout the colonic crypt lengths at 9 but not at 6 weeks post infection. Cell proliferation involving the major types of cells in the epithelial colon was also increased in infected rats at 9 weeks post infection, with labeling indices significantly greater than the control rats throughout the BrdU time course labeling. Findings suggested that massive increases in epithelial cells and depth of colonic crypts were due to a remarkable increase in cell proliferation. The study concluded that enteropathy in the colon during T. taeniaeformis infection could be consistently observed in heavily infected rats.

  18. Silicon spintronics.

    Science.gov (United States)

    Jansen, Ron

    2012-04-23

    Worldwide efforts are underway to integrate semiconductors and magnetic materials, aiming to create a revolutionary and energy-efficient information technology in which digital data are encoded in the spin of electrons. Implementing spin functionality in silicon, the mainstream semiconductor, is vital to establish a spin-based electronics with potential to change information technology beyond imagination. Can silicon spintronics live up to the expectation? Remarkable advances in the creation and control of spin polarization in silicon suggest so. Here, I review the key developments and achievements, and describe the building blocks of silicon spintronics. Unexpected and puzzling results are discussed, and open issues and challenges identified. More surprises lie ahead as silicon spintronics comes of age.

  19. Advanced silicon materials for photovoltaic applications

    CERN Document Server

    Pizzini, Sergio

    2012-01-01

    Today, the silicon feedstock for photovoltaic cells comes from processes which were originally developed for the microelectronic industry. It covers almost 90% of the photovoltaic market, with mass production volume at least one order of magnitude larger than those devoted to microelectronics. However, it is hard to imagine that this kind of feedstock (extremely pure but heavily penalized by its high energy cost) could remain the only source of silicon for a photovoltaic market which is in continuous expansion, and which has a cumulative growth rate in excess of 30% in the last few years. Ev

  20. Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer

    Directory of Open Access Journals (Sweden)

    Kwang Hong Lee

    2016-02-01

    Full Text Available High quality germanium (Ge epitaxial film is grown directly on silicon (001 substrate with 6° off-cut using a heavily arsenic (As doped Ge seed layer. The growth steps consists of (i growth of a heavily As-doped Ge seed layer at low temperature (LT, at 400 °C, (ii Ge growth with As gradually reduced to zero at high temperature (HT, at 650 °C, (iii pure Ge growth at HT. This is followed by thermal cyclic annealing in hydrogen at temperature ranging from 600 to 850 °C. Analytical characterization have shown that the Ge epitaxial film with a thickness of ∼1.5 µm experiences thermally induced tensile strain of 0.20% with a treading dislocation density (TDD of mid 106/cm2 which is one order of magnitude lower than the control group without As doping and surface roughness of 0.37 nm. The reduction in TDD is due to the enhancement in velocity of dislocations in an As-doped Ge film.

  1. Influence of the formation- and passivation rate of boron-oxygen defects for mitigating carrier-induced degradation in silicon within a hydrogen-based model

    Energy Technology Data Exchange (ETDEWEB)

    Hallam, Brett, E-mail: brett.hallam@unsw.edu.au; Abbott, Malcolm; Nampalli, Nitin; Hamer, Phill; Wenham, Stuart [School of Photovoltaics and Renewable Energy Engineering, Level 1 Tyree Energy Technologies Building, University of New South Wales, Kensington, NSW 2052 (Australia)

    2016-02-14

    A three-state model is used to explore the influence of defect formation- and passivation rates of carrier-induced degradation related to boron-oxygen complexes in boron-doped p-type silicon solar cells within a hydrogen-based model. The model highlights that the inability to effectively mitigate carrier-induced degradation at elevated temperatures in previous studies is due to the limited availability of defects for hydrogen passivation, rather than being limited by the defect passivation rate. An acceleration of the defect formation rate is also observed to increase both the effectiveness and speed of carrier-induced degradation mitigation, whereas increases in the passivation rate do not lead to a substantial acceleration of the hydrogen passivation process. For high-throughput mitigation of such carrier-induced degradation on finished solar cell devices, two key factors were found to be required, high-injection conditions (such as by using high intensity illumination) to enable an acceleration of defect formation whilst simultaneously enabling a rapid passivation of the formed defects, and a high temperature to accelerate both defect formation and defect passivation whilst still ensuring an effective mitigation of carrier-induced degradation.

  2. Performance potential of low-defect density silicon thin-film solar cells obtained by electron beam evaporation and laser crystallisation

    Directory of Open Access Journals (Sweden)

    Kim K. H.

    2013-01-01

    Full Text Available A few microns thick silicon films on glass coated with a dielectric intermediate layer can be crystallised by a single pass of a line-focused diode laser beam. Under favorable process conditions relatively large linear grains with low defect density are formed. Most grain boundaries are defect-free low-energy twin-boundaries. Boron-doped laser crystallised films are processed into solar cells by diffusing an emitter from a phosphorous spin-on-dopant source, measuring up to 539 mV open-circuit voltage prior to metallisation. After applying a point-contact metallisation the best cell achieves 7.8% energy conversion efficiency, open-circuit voltage of 526 mV and short-circuit current of 26 mA/cm2. The efficiency is significantly limited by a low fill-factor of 56% due to the simplified metallisation approach. The internal quantum efficiency of laser crystallised cells is consistent with low front surface recombination. By improving cell metallisation and enhancing light-trapping the efficiencies of above 13% can be achieved.

  3. Electronic Properties of Boron and Silicon Doped (10, 0 Zigzag Single-Walled Carbon Nanotube upon Gas Molecular Adsorption: A DFT Comparative Study

    Directory of Open Access Journals (Sweden)

    P. A. Gowri sankar

    2013-01-01

    Full Text Available We have performed a comparative study of nine predominant gas molecules (H2, H2O, O2, CO, CO2, NO, NO2, NH3, and CH3OH adsorption property on the top surface of the (10, 0 zigzag single-walled pristine Carbon nanotube (C-CNT, Boron doped carbon nanotube (B-CNT, and Silicon doped carbon nanotube (Si-CNT are investigated by using density functional theory (DFT computations to exploit their potential applications as gas sensors. For the first time, we calculated the optimal equilibrium position, absorption energy (Ead, and density of states (DOS of the considered gas molecules adsorbed on the open end of zigzag single-walled (10, 0 B-CNT and Si-CNT. Our first principle calculations demonstrate that the B-CNT and Si-CNT adsorbent materials are able to adsorb the considered gas molecules with variety of adsorption energy and their electronic structure dramatic changes in the density of states near the Fermi level. The obtained comparative DFT studies results are useful for designing a high-fidelity gas sensor materials and selective adsorbents for a selective gas sensor.

  4. Effect of Rapid Thermal Processing on Light-Induced Degradation of Carrier Lifetime in Czochralski p-Type Silicon Bare Wafers

    Science.gov (United States)

    Kouhlane, Y.; Bouhafs, D.; Khelifati, N.; Belhousse, S.; Menari, H.; Guenda, A.; Khelfane, A.

    2016-11-01

    The electrical properties of Czochralski silicon (Cz-Si) p-type boron-doped bare wafers have been investigated after rapid thermal processing (RTP) with different peak temperatures. Treated wafers were exposed to light for various illumination times, and the effective carrier lifetime ( τ eff) measured using the quasi-steady-state photoconductance (QSSPC) technique. τ eff values dropped after prolonged illumination exposure due to light-induced degradation (LID) related to electrical activation of boron-oxygen (BO) complexes, except in the sample treated with peak temperature of 785°C, for which the τ eff degradation was less pronounced. Also, a reduction was observed when using the 830°C peak temperature, an effect that was enhanced by alteration of the wafer morphology (roughness). Furthermore, the electrical resistivity presented good stability under light exposure as a function of temperature compared with reference wafers. Additionally, the optical absorption edge shifted to higher wavelength, leading to increased free-carrier absorption by treated wafers. Moreover, a theoretical model is used to understand the lifetime degradation and regeneration behavior as a function of illumination time. We conclude that RTP plays an important role in carrier lifetime regeneration for Cz-Si wafers via modification of optoelectronic and structural properties. The balance between an optimized RTP cycle and the rest of the solar cell elaboration process can overcome the negative effect of LID and contribute to achievement of higher solar cell efficiency and module performance.

  5. Context of Carbonate Rocks in Heavily Eroded Martian Terrain

    Science.gov (United States)

    2008-01-01

    The color coding on this composite image of an area about 20 kilometers (12 miles) wide on Mars is based on infrared spectral information interpreted as evidence of various minerals present. Carbonate, which is indicative of a wet and non-acidic history, occurs in very small patches of exposed rock appearing green in this color representation, such as near the lower right corner. The scene is heavily eroded terrain to the west of a small canyon in the Nili Fossae region of Mars. It was one of the first areas where researchers on the Compact Reconnaissance Imaging Spectrometer for Mars (CRISM) science team detected carbonate in Mars rocks. The spectral information comes from infrared imaging by CRISM, one of six science instruments on NASA's Mars Reconnaissance Orbiter. That coloring is overlaid on a grayscale image from the same orbiter's Context Camera. The uppermost capping rock unit (purple) is underlain successively by banded olivine-bearing rocks (yellow) and rocks bearing iron-magnesium smectite clay (blue). Where the olivine is a greenish hue, it has been partially altered by interaction with water. The carbonate and olivine occupy the same level in the stratigraphy, and it is thought that the carbonate formed by aqueous alteration of olivine. The channel running from upper left to lower right through the image and eroding into the layers of bedrock testifies to the past presence of water in this region. That some of the channels are closely associated with carbonate (lower right) indicates that waters interacting with the carbonate were neutral to alkaline because acidic waters would have dissolved the carbonate. Information for the color coding came from CRISM images catalogued as FRT0000B438, FRT0000A4FC, and FRT00003E12. This composite was made using 2.38-micrometer-wavelenghth data as red, 1.80 micrometer as green and 1.15 micrometer as blue. The base black-and-white image, acquired at a resolution of 5 meters (16 feet) per pixel, is catalogued as CTX P

  6. Boron doped diamond electrode for the wastewater treatment

    Energy Technology Data Exchange (ETDEWEB)

    Quiroz Alfaro, Marco Antonio [Universidad de las Americas-Puebla, Santa Catarina Martir (Mexico). Escuela de Ciencias. Dept. de Quimica y Biologia; Ferro, Sergio; Martinez-Huitle, Carlos Alberto [University of Ferrara (Italy). Dept. of Chemistry; Vong, Yunny Meas [Centro de Investigacion y Desarrollo Tecnologico en Electroquimica S.C., Quertaro (Mexico). Parque Tecnologico Queretaro Sanfandila

    2006-03-15

    Electrochemical studies of diamond were started more than fifteen years ago with the first paper on diamond electrochemistry published by Pleskov. After that, work started in Japan, United States of America, France, Switzerland and other countries. Over the last few years, the number of publications has increased considerably. Diamond films have been the subject of applications and fundamental research in electrochemistry, opening up a new branch known as the electrochemistry of diamond electrodes. Here, we first present a brief history and the process of diamond film synthesis. The principal objective of this work is to summarize the most important results in the electrochemical oxidation using diamond electrodes. (author)

  7. Technology for boron-doped layers formation on the diamond

    Directory of Open Access Journals (Sweden)

    Zyablyuk K. N.

    2012-10-01

    Full Text Available The authors investigated natural type IIa diamond crystals and CVD diamond films. The article presents electrophysical parameters of the structures obtained in different modes of ion implantation of boron into the crystal with further annealing. Parameters of the crystals with a high nitrogen impurity density indicate that they can be used for the manufacture of microwave field-effect transistors operating at room temperature. CVD diamond films doped with boron during the growth process also have the required for MOSFET manufacture carrier mobility. However, due to the high activation energy of boron, the required channel conductivity is achieved at high operating temperatures.

  8. Boron doped simulated graphene field effect transistor model

    Science.gov (United States)

    Sharma, Preetika; Kaur, Inderpreet; Gupta, Shuchi; Singh, Sukhbir

    2016-05-01

    Graphene based electronic devices due to its unique properties has transformed electronics. A Graphene Field Effect Transistor (GNRFET) model is simulated in Virtual Nano Lab (VNL) and the calculations are based on density functional theory (DFT). Simulations were performed on this pristine GNRFET model and the transmission spectrum was observed. The graph obtained showed a uniform energy gap of +1 to -1eV and the highest transmission peak at -1.75 eV. To this pristine model of GNRFET, doping was introduced and its effect was seen on the Fermi level obtained in the transmission spectrum. Boron as a dopant was used which showed variations in both the transmission peaks and the energy gap. In this model, first the single boron was substituted in place of carbon and Fermi level showed an energy gap of 1.5 to -0.5eV with the highest transmission peak at -1.3 eV. In another variation in the model, two carbon atoms were replaced by two boron atoms and Fermi level shifted from 2 to 0.25eV. In this observation, the highest transmission peak was observed at -1(approx.). The use of nanoelectronic devices have opened many areas of applications as GFET is an excellent building block for electronic circuits, and is being used in applications such as high-performance frequency doublers and mixers, digital modulators, phase detectors, optoelectronics and spintronics.

  9. Adsorption Mechanism of Hydrogen on Boron-Doped Fullerenes

    Institute of Scientific and Technical Information of China (English)

    YU Liu-Min; SHI Guo-Sheng; WANG Zhi-Gang; JI Guang-Fu; LU Zhi-Peng

    2009-01-01

    The C35BH-H2 complex and two other possible isomers,C34BCαH-H2 and C34BCbH-H2,are investigated using the local-spin-density approximation (LSDA) method.The results indicate that a single hydrogen molecule could be strongly adsorbed on two isomers,C34BCaH and C34BCbH,with binding energies of 0.42 and 0.47eV,respectively,and that these calculated binding energies are suitable for reversible hydrogen adsorption/desorption near room temperature.However,it is difficult for the H2 molecule to be firmly adsorbed on C35BH.We analyze the interaction between C34BCxH (x = a,b) and the H2 molecule using dipole moments and molecular orbitals.The charge analysis showed there was a partial charge (about 0.32e)transfer from H2 to the doped fullerenes.These calculation results should broaden our understanding of the mechanisms of hydrogen storage using borondoped fullerenes.

  10. BDD 和 PbO2电极电化学氧化苯并三氮唑的对比研究%Comparative Study of Benzotriazole Electrochemical Oxidation at Boron-doped Diamond and PbO2 Anodes

    Institute of Scientific and Technical Information of China (English)

    伍娟丽; 张佳维; 王婷; 倪晋仁

    2015-01-01

    分别构建了以掺硼金刚石膜电极(BDD)和二氧化铅电极(PbO2)为阳极的电化学体系,对比考察了两种电极对难降解有机污染物苯并三氮唑(BTA)的降解及体系的矿化效果,并从电极产生羟基自由基(.OH)的数量与形态角度深入探讨了影响电极矿化能力大小的内在因素.结果表明:①BDD 和 PbO2电极均对 BTA 有较好的降解效果,电解12 h 后 BTA 去除率分别为99.48℅和98.36℅,但 BDD 电极的矿化能力明显强于 PbO2电极,电解12 h 后矿化率分别为87.69℅和35.96℅;②BDD体系阳极.OH产生速率和阴极 H2产生速率均低于 PbO2体系,即表面活性位点数量少于 PbO2电极,因此.OH数量不是决定矿化能力大小的关键;③BDD 电极表面吸附氧活性更强,结合能(532.37eV)大于 PbO2(530.74eV),且表面吸附层更薄,产生的.OH形态更自由,是决定其具有更大矿化能力的关键因素.%Electrochemical systems were built to investigate the degradation of benzotriazole (BTA) on boron-doped diamond (BDD) and PbO2 anodes and give an insight into the mineralization ability of two electrodes in terms of the amount and activity of hydroxyl radicals. Results of bulk electrolysis showed that both BDD and PbO2 displayed perfect BTA degradation performance after 12 hours’ electrolysis, with the removal percentages of 99. 48℅ and 98. 36℅ , respectively, while the mineralization ability of BDD was much stronger than that of PbO2 , with the efficiency of 87. 69℅ for BDD and 35. 96℅ for PbO2 . Less hydroxyl radical and hydrogen production in BDD system suggested the less amount of active sites on BDD surface, thus further verified that the generated hydroxyl radical amount was not the primary factor determining the mineralization ability of anodes. However, BDD displayed larger binding energy of adsorbed oxygen and thinner adsorption layer than those of PbO2 , indicating that the BDD electrode surface was of greater catalytic

  11. Efficiency Enhancement of Nanoporous Silicon/Polycrystalline-Silicon Solar Cells by Application of Trenched Electrodes

    OpenAIRE

    Kuen-Hsien Wu; Chia-Chun Tang

    2014-01-01

    Trenched electrodes were proposed to enhance the short-circuit current and conversion efficiency of polycrystalline-silicon (poly-Si) solar cells with nanoporous silicon (NPS) surface layers. NPS films that served as textured surface layers were firstly prepared on heavily doped p+-type (100) poly-Si wafers by anodic etching process. Interdigitated trenches were formed in the NPS layers by a reactive-ion-etch (RIE) process and Cr/Al double-layered metal was then deposited to fill the trenches...

  12. Infrared photoresponse of silicon devices at 1.15 microns

    Science.gov (United States)

    Lanyon, H. P. D.; Mccurdy, A. K.; Tuft, R. A.

    1978-01-01

    The photoconductive absorption of silicon devices at 1.15 microns is through band-to-band transitions with the simultaneous absorption of a 57.7 meV phonon. Its temperature dependence arises both from the changing phonon population and, more significantly, from the change in silicon bandgap with temperature. The temperature dependence of the photoresponse of quasi-intrinsic silicon samples is in good agreement with the optical absorption data of Macfarlane et al. More heavily doped silicon devices show a photoresponse extending to a lower temperature and having a smaller temperature dependence than intrinsic silicon. This is explained in terms of bandgap narrowing. Comparison with theoretical curves enables the resolution of bandgap reductions at the meV level.

  13. Silicon Spintronics

    NARCIS (Netherlands)

    Jansen, R.

    2008-01-01

    Integration of magnetism and mainstream semiconductor electronics could impact information technology in ways beyond imagination. A pivotal step is implementation of spin-based electronic functionality in silicon devices. Remarkable progress made during the last two years gives confidence that this

  14. Simulation of Low Gain Avalanche Detector characteristics based on the concept of negative feedback in irradiated silicon detectors with carrier impact ionization

    Science.gov (United States)

    Verbitskaya, E.; Eremin, V.; Zabrodskii, A.; Luukka, P.

    2016-12-01

    In this study the main characteristics of silicon Low Gain Avalanche Detectors (LGAD), the dependencies of the collected charge versus bias voltage and fluence, are calculated to fit experimental data. The calculations are based on two previously developed Ioffe Institute models of radiation degradation in Si detectors: 1) a model of two effective energy levels of radiation-induced defects, and 2) a mechanism of internal negative feedback responsible for the gain degradation in irradiated Si detectors originating from the avalanche multiplication at the detector junction. The combination of these models describes well the properties of irradiated p-i-n detectors in a wide range of fluences. For simulating the LGAD characteristics the models are adapted to its n+-pbi-p-p+ structure, where the built-in boron-doped layer pbi produces high electric field sufficient for carrier impact ionization. It is shown that the developed models give adequate quantitative description of the experimental results for the LGADs up to the fluence of 2×1015 n/cm2 including the detector pulse response; however, additional boron removal from the pbi layer is required to have the best correlation with the experimental data. Similar to the physical model developed for silicon strip detectors operated at high voltage, the results are interpreted in terms of the internal negative feedback mechanism. It is shown that in irradiated LGADs this feedback leads to the transfer of a significant fraction of the potential drop from the built-in layer toward the p+ contact. It initiates two negative effects, which both cause the gain degradation with irradiation: the lowering of the electric field in the n+-pbi region that reduces the multiplication probability, and the increase of the collection time and trapping-related charge losses.

  15. Lithographically patterned silicon nanostructures on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Megouda, Nacera [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Universite Lille1, Parc de la Haute Borne, 50 Avenue de Halley-BP 70478, 59658 Villeneuve d' Ascq and Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, CNRS-8520), Cite Scientifique, Avenue Poincare-B.P. 60069, 59652 Villeneuve d' Ascq (France); Faculte des Sciences, Universite Mouloud Mammeri, Tizi-Ouzou (Algeria); Unite de Developpement de la Technologie du Silicium (UDTS), 2 Bd. Frantz Fanon, B.P. 140 Alger-7 merveilles, Alger (Algeria); Piret, Gaeelle; Galopin, Elisabeth; Coffinier, Yannick [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Universite Lille1, Parc de la Haute Borne, 50 Avenue de Halley-BP 70478, 59658 Villeneuve d' Ascq and Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, CNRS-8520), Cite Scientifique, Avenue Poincare-B.P. 60069, 59652 Villeneuve d' Ascq (France); Hadjersi, Toufik, E-mail: hadjersi@yahoo.com [Unite de Developpement de la Technologie du Silicium (UDTS), 2 Bd. Frantz Fanon, B.P. 140 Alger-7 merveilles, Alger (Algeria); Elkechai, Omar [Faculte des Sciences, Universite Mouloud Mammeri, Tizi-Ouzou (Algeria); and others

    2012-06-01

    The paper reports on controlled formation of silicon nanostructures patterns by the combination of optical lithography and metal-assisted chemical dissolution of crystalline silicon. First, a 20 nm-thick gold film was deposited onto hydrogen-terminated silicon substrate by thermal evaporation. Gold patterns (50 {mu}m Multiplication-Sign 50 {mu}m spaced by 20 {mu}m) were transferred onto the silicon wafer by means of photolithography. The etching process of crystalline silicon in HF/AgNO{sub 3} aqueous solution was studied as a function of the silicon resistivity, etching time and temperature. Controlled formation of silicon nanowire arrays in the unprotected areas was demonstrated for highly resistive silicon substrate, while silicon etching was observed on both gold protected and unprotected areas for moderately doped silicon. The resulting layers were characterized using scanning electron microscopy (SEM).

  16. Inclusion of degeneracy in the analysis of heavily doped regions in silicon solar cells and other semiconductor devices

    Science.gov (United States)

    Shibib, M. A.

    1981-02-01

    A simple analytic approximation of Fermi-Dirac integrals of order 1/2 is presented and is used to derive an expression for the square of the effective intrinsic carrier concentration (n sub ie squared) in a semiconductor with energy band gap narrowing and degeneracy of the charge carriers. This expression is useful in the analysis of solar cells and of other semiconductor devices containing regions of heavy doping concentration.

  17. CMOS Thermal Ox and Diffusion Furnace: Tystar Tytan 2000

    Data.gov (United States)

    Federal Laboratory Consortium — Description:CORAL Names: CMOS Wet Ox, CMOS Dry Ox, Boron Doping (P-type), Phos. Doping (N-Type)This four-stack furnace bank is used for the thermal growth of silicon...

  18. Studies of silicon p-n junction solar cells

    Science.gov (United States)

    Neugroschel, A.; Lindholm, F. A.

    1979-01-01

    To provide theoretical support for investigating different ways to obtain high open-circuit voltages in p-n junction silicon solar cells, an analytical treatment of heavily doped transparent-emitter devices is presented that includes the effects of bandgap narrowing, Fermi-Dirac statistics, a doping concentration gradient, and a finite surface recombination velocity at the emitter surface. Topics covered include: (1) experimental determination of bandgap narrowing in the emitter of silicon p-n junction devices; (2) heavily doped transparent regions in junction solar cells, diodes, and transistors; (3) high-low-emitter solar cell; (4) determination of lifetimes and recombination currents in p-n junction solar cells; (5) MOS and oxide-charged-induced BSF solar cells; and (6) design of high efficiency solar cells for space and terrestrial applications.

  19. Heavy doping effects in high efficiency silicon solar cells

    Science.gov (United States)

    Lindholm, F. A.; Neugroschel, A.

    1986-01-01

    The temperature dependence of the emitter saturation current for bipolar devices was studied by varying the surface recombination velocity at the emitter surface. From this dependence, the value was derived for bandgap narrowing that is in better agreement with other determinations that were obtained from the temperature dependence measure on devices with ohmic contacts. Results of the first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer were reported. The value was obtained by a high-frequency conductance method recently developed and used for doped Si. Experimental evidence is presented for significantly greater charge storage in highly excited silicon near room temperature than conventional theory would predict. These data are compared with various data for delta E sub G in heavily doped silicon.

  20. Microstructure and properties of heavily deformed Cu-Ag-Ce in situ nano-filamentary composite

    Institute of Scientific and Technical Information of China (English)

    ZHANG; Xiao-hui; YAN; Lin; NING; Yuan-tao

    2005-01-01

    The microstructure and properties of heavily deformed Cu-Ag-Ce in situ nano-filamentary composite were studied in this paper. As cast, copper matrixes were dendritic and Ag-rich phases, some of which present spheroidizing tendency, were embedded in Cu dentritic arms. After heavily deforming, Agrich phases develop into fibers: the thick fibers with a size of more than 50 nm and the thin ones with a size of less than 30 nm. Strengthening of Cu-Ag-Ce in situ nano-filamentary composite could be divided into two stages and the combination of different strength and conductivity could be obtained through controlling reducing area, intermediate heat treatment and stabilizing treatment. The results revealed that heavily deformed Cu-Ag-Ce in situ nano-filamentary composite had high strength ( > 1.5GPa) and high conductivity(>65 %IACS).