Flotation separation of hafnium(IV) from aqueous solutions

Energy Technology Data Exchange (ETDEWEB)

Downey, D.M.; Narick, C.N.; Cohen, T.A.

1985-09-01

A simple, rapid method for the separation of hafnium from aqueous solutions was investigated using sup(175 + 181)Hf tracer. Cationic hafnium complex ions were floated from dilute acid solutions with sodium lauryl sulfate (SLS) and anionic hafnium complexes were floated from basic and oxalic acid solutions with hexadecyltrimethyl ammonium bromide (HTMAB). The conditions necessary for quantitative recovery of the metal and mechanisms of flotation are described. (author). 21 refs.; 5 figs.

Kinetic studies on the hafnium nad deuterium

International Nuclear Information System (INIS)

Bing Wenzeng; Long Xinggui; Zhu Zuliang

2009-04-01

Through the method of reaction rate analysis in a constant volume reactor, the time dependence of the pressure drop of the hafnium deuteride formation are studied over a temperature range 573-873 K on a metal hydride thermodynamic and kinetic parameters measuring apparatus. The rate constants of the hafnium deuteride formation, which are 0.0530 s -1 , 0.0452 s -1 , 0.0319 s -1 , 0.0261 s -1 , are calculated at a serial temperatures of 573 K, 673 K, 773 K, 873 K and the initial pressure of 13 kPa. The activation energy of the reaction is (-10.1±1.5) kJ·mol -1 . Comparing the above results with those of titanium deuteride formation on the same measuring apparatus, the kinetic mechanism of the deuteride formation of hafnium and titanium is considered different. It is concluded that the reaction rate of hafnium absorbing deuterium may be controlled by phase transformation and surface oxidation. (authors)

Electronic properties of hafnium oxide: A contribution from defects and traps

Energy Technology Data Exchange (ETDEWEB)

Gritsenko, Vladimir A., E-mail: grits@isp.nsc.ru; Perevalov, Timofey V.; Islamov, Damir R., E-mail: damir@isp.nsc.ru

2016-02-15

In the present article, we give a review of modern data and latest achievements pertaining to the study of electronic properties of oxygen vacancies in hafnium oxide. Hafnium oxide is a key dielectric for use in many advanced silicon devices. Oxygen vacancies in hafnium oxide largely determine the electronic properties of the material. We show that the electronic transitions between the states due to oxygen vacancies largely determine the optical absorption and luminescent properties of hafnium oxide. We discuss the role of oxygen vacancies as traps that facilitate charge transport in hafnium oxide films. Also, we demonstrate the fact that the electrical conductivity in hafnium oxide is controlled by the phonon-assisted tunnelling of charge carriers between traps that were identified as oxygen vacancies.

Preparation of complexes of zirconium and hafnium tetrachlorides with phosphorus oxychloride

International Nuclear Information System (INIS)

McLaughlin, D.F.

1989-01-01

This patent describes an improvement in a method for separating hafnium tetrachloride from zirconium tetrachloride where a complex of zirconium-hafnium tetrachlorides and phosphorus oxychloride is prepared from zirconium-hafnium tetrachlorides and the complex of zirconium-hafnium tetrachlorides and phosphorus oxychloride is introduced into a distillation column, which distillation column has a reboiler connected at the bottom and a reflux condenser connected at the top and where a hafnium tetrachloride enriched stream is taken from the top of the column and a zirconium enriched tetrachloride stream is taken from the bottom of the column. The improvement comprising: prepurifying the zirconium-hafnium tetrachlorides, prior to preparation of the complex and introduction of the complex into a distillation column, to substantially eliminate iron chloride from the zirconium hafnium tetrachlorides, whereby buildup or iron chloride in the distillation column and in the reboiler is substantially eliminated and the column can be operated in a continuous, stable and efficient manner

Study of fine structure of deformed hafnium

International Nuclear Information System (INIS)

Voskresenskaya, L.A.; Petukhova, A.S.; Kovalev, K.S.

1978-01-01

Variations in the hafnium fine structure following the cold plastic deformation have been studied. The fine structure condition has been studied through the harmonic analysis of the profile of the X-ray diffraction line, obtained at the DRON-I installation. Received has been the dependence of the crystal lattice microdistortions value on the deformation extent for hafnium. This dependence is compared with the corresponding one for zirconium. It is found out that at all the deformations the microdistortion distribution is uniform. The microdistortion value grows with the increase in the compression. During the mechanical impact higher microdistortions of the crystal lattice occur in the hafnium rather than in zirconium

Properties of filmogen solutions and films of hafnium compounds

International Nuclear Information System (INIS)

Sviridova, A.I.

1986-01-01

Study on hafnium hydrolizing compound solutions, used for hafnium oxide homogeneous layer formation, is conducted. In particular, electric conductivity, acidity and refractive index were investigated depending on the sal on ether concentration and the storage time. Oxyhafnium nitrate, hafnium chloride in ethanol, dichlorodiethoxyhafnium, hafnium oxychloride were used as initial compounds. Hydrolysis of hafnium compounds in solution occurs partially; further process occurs in the thin layer on the optical element surface; final decomposition is performed under heat treatment. It is ascertained, that alcoholic-aqueous solutions of inorganic salts can be filmogen only at definite acidity, density and viscosity (1.33-2.5 cp.). It is also ascertained that refractive index values and transmission spectral boundary of coatings, produced from alkoxy compound solutions and from chloride salt solutions, are practically the same. Transmittance boundary in ultraviolet region of spectrum of oxide films produced from nitrate and chloride solutions, varies with the heating temperature increase differently

Investigation of ferromagnetism in oxygen deficient hafnium oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Hildebrandt, Erwin; Kurian, Jose; Krockenberger, Yoshiharu; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany); Suter, Andreas [PSI, Villingen (Switzerland); Wilhelm, Fabrice; Rogalev, Andrei [ESRF, Grenoble (France)

2008-07-01

Oxygen deficient thin films of hafnium oxide were grown on single crystal r-cut and c-cut sapphire by reactive molecular beam epitaxy. RF-activated oxygen was used for the in situ oxidation of hafnium oxide thin films. Oxidation conditions were varied substantially in order to create oxygen deficiency in hafnium oxide films intentionally. The films were characterized by X-ray and magnetic measurements. X-ray diffraction studies show an increase in lattice parameter with increasing oxygen deficiency. Oxygen deficient hafnium oxide thin films also showed a decreasing bandgap with increase in oxygen deficiency. The magnetisation studies carried out with SQUID did not show any sign of ferromagnetism in the whole oxygen deficiency range. X-ray magnetic circular dichroism measurements also confirmed the absence of ferromagnetism in oxygen deficient hafnium oxide thin films.

Titanium zirconium and hafnium coordination compounds with vanillin thiosemicarbazone

International Nuclear Information System (INIS)

Konunova, Ts.B.; Kudritskaya, S.A.

1987-01-01

Coordination compounds of titanium zirconium and hafnium tetrachlorides with vanillin thiosemicarbazone of MCl 4 x nLig composition, where n=1.5, 4 for titanium and 1, 2, 4 for zirconium and hafnium, are synthesized. Molar conductivity of ethanol solutions is measured; IR spectroscopic and thermochemical investigation are carried out. The supposition about ligand coordination via sulfur and azomethine nitrogen atoms is made. In all cases hafnium forms stable compounds than zirconium

Hafnium - material for chemical apparatus engineering

International Nuclear Information System (INIS)

Jennert, D.

1981-01-01

This work describes - on the background of available literature - the properties of hafnium in technical quality (DIN-material No. 2.6400) as material for chemical apparatus engineering. The occurence, refining, physical and chemical properties will be described as well as the material behavior. In conclusion, it has been found that there is, at present, sufficient information for the engineering of hafnium which has to be completed by additional investigations for special applications. (orig.) [de

Internal Dosimetry for Inhalation of Hafnium Tritide Aerosols

Energy Technology Data Exchange (ETDEWEB)

Inkret, W.C.T.; Schillaci, M.E.; Boyce, M.K.; Cheng, Y.S.; Efurd, D.W.; Little, T.T.; Miller, G.; Musgrave, J.A.; Wermer, J.R

2001-07-01

Metal tritides with low dissolution rates may have residence times in the lungs which are considerably longer than the biological half-time normally associated with tritium in body water, resulting in long-term irradiation of the lungs by low energy {beta} particles and bremsstrahlung X rays. Samples of hafnium tritide were placed in a lung simulant fluid to determine approximate lung dissolution rates. Hafnium hydride samples were analysed for particle size distribution with a scanning electron microscope. Lung simulant data indicated a biological dissolution half-time for hafnium tritide on the order of 10{sup 5}d. Hafnium hydride particle sizes ranged between 2 and 10 {mu}m, corresponding to activity median aerodynamic diameters of 5 to 25 {mu}m. Review of in vitro dissolution data, development of a biokinetic model, and determination of secondary limits for 1 {mu}m AMAD particles are presented and discussed. (author)

Irradiation behavior of miniature experimental uranium silicide fuel plates

International Nuclear Information System (INIS)

Hofman, G.L.; Neimark, L.A.; Mattas, R.F.

1983-01-01

Uranium silicides, because of their relatively high uranium density, were selected as candidate dispersion fuels for the higher fuel densities required in the Reduced Enrichment Research and Test Reactor (RERTR) Program. Irradiation experience with this type of fuel, however, was limited to relatively modest fission densities in the bulk from, on the order of 7 x 10 20 cm -3 , far short of the approximately 20 x 10 20 cm -3 goal established for the RERTR program. The purpose of the irradiation experiments on silicide fuels on the ORR, therefore, was to investigate the intrinsic irradiation behavior of uranium silicide as a dispersion fuel. Of particular interest was the interaction between the silicide particles and the aluminum matrix, the swelling behavior of the silicide particles, and the maximum volume fraction of silicide particles that could be contained in the aluminum matrix

Titanium(IV), zirconium, hafnium and thorium

International Nuclear Information System (INIS)

Brown, Paul L.; Ekberg, Christian

2016-01-01

Titanium can exist in solution in a number of oxidation states. The titanium(IV) exists in acidic solutions as the oxo-cation, TiO 2+ , rather than Ti 4+ . Zirconium is used in the ceramics industry and in nuclear industry as a cladding material in reactors where its reactivity towards hydrolysis reactions and precipitation of oxides may result in degradation of the cladding. In nature, hafnium is found together with zirconium and as a consequence of the contraction in ionic radii that occurs due to the 4f -electron shell, the ionic radius of hafnium is almost identical to that of zirconium. All isotopes of thorium are radioactive and, as a consequence of it being fertile, thorium is important in the nuclear fuel cycle. The polymeric hydrolysis species that have been reported for thorium are somewhat different to those identified for zirconium and hafnium, although thorium does form the Th 4 (OH) 8 8+ species.

Ferroelectricity in undoped hafnium oxide

International Nuclear Information System (INIS)

Polakowski, Patrick; Müller, Johannes

2015-01-01

We report the observation of ferroelectric characteristics in undoped hafnium oxide thin films in a thickness range of 4–20 nm. The undoped films were fabricated using atomic layer deposition (ALD) and embedded into titanium nitride based metal-insulator-metal (MIM) capacitors for electrical evaluation. Structural as well as electrical evidence for the appearance of a ferroelectric phase in pure hafnium oxide was collected with respect to film thickness and thermal budget applied during titanium nitride electrode formation. Using grazing incidence X-Ray diffraction (GIXRD) analysis, we observed an enhanced suppression of the monoclinic phase fraction in favor of an orthorhombic, potentially, ferroelectric phase with decreasing thickness/grain size and for a titanium nitride electrode formation below crystallization temperature. The electrical presence of ferroelectricity was confirmed using polarization measurements. A remanent polarization P r of up to 10 μC cm −2 as well as a read/write endurance of 1.6 × 10 5 cycles was measured for the pure oxide. The experimental results reported here strongly support the intrinsic nature of the ferroelectric phase in hafnium oxide and expand its applicability beyond the doped systems

Hafnium-Based Contrast Agents for X-ray Computed Tomography.

Science.gov (United States)

Berger, Markus; Bauser, Marcus; Frenzel, Thomas; Hilger, Christoph Stephan; Jost, Gregor; Lauria, Silvia; Morgenstern, Bernd; Neis, Christian; Pietsch, Hubertus; Sülzle, Detlev; Hegetschweiler, Kaspar

2017-05-15

Heavy-metal-based contrast agents (CAs) offer enhanced X-ray absorption for X-ray computed tomography (CT) compared to the currently used iodinated CAs. We report the discovery of new lanthanide and hafnium azainositol complexes and their optimization with respect to high water solubility and stability. Our efforts culminated in the synthesis of BAY-576, an uncharged hafnium complex with 3:2 stoichiometry and broken complex symmetry. The superior properties of this asymmetrically substituted hafnium CA were demonstrated by a CT angiography study in rabbits that revealed excellent signal contrast enhancement.

40 CFR 471.90 - Applicability; description of the zirconium-hafnium forming subcategory.

Science.gov (United States)

2010-07-01

... zirconium-hafnium forming subcategory. 471.90 Section 471.90 Protection of Environment ENVIRONMENTAL... POINT SOURCE CATEGORY Zirconium-Hafnium Forming Subcategory § 471.90 Applicability; description of the zirconium-hafnium forming subcategory. This subpart applies to discharges of pollutants to waters of the...

Calorimetric measurements on hafnium titanate

International Nuclear Information System (INIS)

Kandan, R.; Prabhakara Reddy, B.; Panneerselvam, G.; Nagarajan, K.

2012-01-01

Owing to its desirable nuclear and mechanical properties such as good absorption cross-section for thermal neutrons (105 barns), hafnium titanate (HfTiO 4 ) finds application as control rods for nuclear reactors. An accurate knowledge of the thermo physical properties of this material is necessary for design of control rod and for modeling its performance. Heat capacity is an important thermodynamic property that determines the temperature dependent variation of all other thermodynamic properties. Hence enthalpy increments of hafnium titanate (HfTiO 4 ) were measured in the temperature range 803-1663 K by employing the method of inverse drop calorimetry using high temperature differential calorimeter

Preparation of complexes of zirconium and hafnium tetrachlorides with phosphorus oxychloride

International Nuclear Information System (INIS)

Snyder, T.S.; Stoltz, R.A.

1989-01-01

This patent describes an improvement in a method for separating hafnium chloride from zirconium chloride using a distillation column, with a hafnium chloride enriched vapor stream taken from the top of the column and a zirconium enriched chloride stream taken from the bottom of the column. The improvement comprising: purifying the zirconium-hafnium chloride in a molten salt purification vessel prior to or after introduction into the distillation column to substantially eliminate iron chloride from the zirconium-hafnium chloride by at least periodically removing iron chloride from the molten salt purification vessel by electrochemically plating iron onto an electrode in the molten salt purification vessel. The molten salt in the molten salt purification vessel consisting essentially of a mixture of chlorides selected from the group consisting of alkali metals, alkaline earth metals, zirconium, hafnium, aluminum, manganese, and zinc

Recent Advances in Nb-silicide in-situ composites

International Nuclear Information System (INIS)

Bewlay, B.P.; Jackson, M.R.; Subramanian, P.R.; Briant, C.L.

2001-01-01

In-situ composites based on Nb silicides have great potential for future high-temperature applications. These Nb-silicide composites combine a ductile Nb-based matrix with high-strength silicides. With the appropriate combination of alloying elements, such as Ti, Hf, Cr, AI, it is possible to achieve a promising balance of fracture toughness, high-temperature creep performance, and oxidation resistance. This paper will describe the effect of volume fraction of silicide on microstructure, high-temperature creep performance, and oxidation resistance. The ratio of Nb:(W+Ti) is critical in determining both creep rate and oxidation performance. If this ratio goes below ∼1.5, the creep rate increases substantially. In more complex silicide-based systems, other intermetallics, such as laves phases and a boron-rich T-2 phase, are added for oxidation resistance. To understand the role of each phase on the creep resistance and oxidation performance of these composites, we determined the creep and oxidation behavior of the individual phases and composites at temperatures up to 1200 o C. These data allow quantification of the load-bearing capability of the individual phases in the Nb-silicide based in-situ composites. (author)

Method of purifying zirconium tetrachloride and hafnium tetrachloride in a vapor stream

International Nuclear Information System (INIS)

Snyder, T.S.; Stolz, R.A.

1992-01-01

This patent describes a method of purifying zirconium tetrachloride and hafnium tetrachloride in a vapor stream from a sand chlorinator in which the silicon and metals present in sand fed to the chlorinator are converted to chlorides at temperatures over about 800 degrees C. It comprises cooling a vapor stream from a sand chlorinator, the vapor stream containing principally silicon tetrachloride, zirconium tetrachloride, and hafnium tetrachloride contaminated with ferric chloride, to a temperature of from about 335 degrees C to about 600 degrees C; flowing the vapor stream through a gaseous diffusion separative barrier to produce a silicon tetrachloride-containing vapor stream concentrated in zirconium tetrachloride and hafnium tetrachloride and a silicon tetrachloride-containing vapor stream depleted in zirconium tetrachloride and hafnium tetrachloride; adsorbing the ferric chloride in the separative barrier; and recovering the silicon tetrachloride stream concentrated in zirconium tetrachloride and hafnium tetrachloride separately from the silicon tetrachloride stream depleted in zirconium tetrachloride and hafnium tetrachloride

TiSi2 integrity within a doped silicide process step

International Nuclear Information System (INIS)

Crean, G.M.; Cole, P.D.; Stoemenos, J.

1993-01-01

Degradation of arsenic implanted titanium silicide (TiSi 2 ) thin films as a result of thermal processing for shallow junction formation is investigated. Significant arsenic diffusion from the silicide overlayer into the silicon substrate has been detected by Rutherford Backscattering Spectrometry at drive-in temperatures > 1,050 C. Cross-sectional transmission electron micrographs have shown the silicide film become increasingly non-uniform as the thermal budget increases, ultimately leading to discontinuities forming in the silicide film. This observed degradation of the titanium silicide film is also supported by sheet resistance measurements which show the film to degrade significantly above a threshold thermal budget

Subsurface contributions in epitaxial rare-earth silicides

Energy Technology Data Exchange (ETDEWEB)

Luebben, Olaf; Shvets, Igor V. [Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), School of Physics, Trinity College, Dublin (Ireland); Cerda, Jorge I. [Instituto de Ciencia de Materiales de Madrid, ICMM-CSIC, Cantoblanco, Madrid (Spain); Chaika, Alexander N. [Institute of Solid State Physics, RAS, Chernogolovka (Russian Federation)

2015-07-01

Metallic thin films of heavy rare-earth silicides epitaxially grown on Si(111) substrates have been widely studied in recent years because of their appealing properties: unusually low values of the Schottky barrier height, an abrupt interface, and a small lattice mismatch. Previous studies also showed that these silicides present very similar atomic and electronic structures. Here, we examine one of these silicides (Gd{sub 3}Si{sub 5}) using scanning tunneling microscopy (STM) image simulations that go beyond the Tersoff-Hamann approach. These simulations strongly indicate an unusual STM depth sensitivity for this system.

Spectrofluorimetric determination of hafnium and zirconium with 3,7-dihydroxyflavone

Energy Technology Data Exchange (ETDEWEB)

Ito, Takushi; Suzuki, Osamu; Seuzuki, Tetsuo; Murata, Akira

1986-04-01

The absorptive and fluorescent characteristics of the hafnium and zirconium complexes of 3-hydroxyflavone and its 12 hydroxy and methoxy derivatives have been studied. The fluorescence of the 1:1 hafnium - 3,7-dihydroxyflavone complex (lambdasub(ex.)397 nm,lambdasub(em.) 465 nm) in 3 M hydrochloric acid has been used to determine 2-40 ng ml/sup -1/ of hafnium. The fluorescence of the 1:1 zirconium - 3,7-dihydroxyflavone complex (lambdasub(ex.) 395 nm, lambda sub(em.) 465 nm) at pH 2.0 in 0.02 M sulphate solution has been used to determine 2-40 ng ml/sup -1/ of zirconium. These methods are very sensitive and can be used for the simultaneous determination of hafnium and zirconium with an error of about 5%.

Molten salt extractive distillation process for zirconium-hafnium separation

International Nuclear Information System (INIS)

McLaughlin, D.F.; Stoltz, R.A.

1989-01-01

This patent describes an improvement in a process for zirconium-hafnium separation. It utilizes an extractive distillation column with a mixture of zirconium and hafnium tetrachlorides introduced into a distillation column having a top and bottom with hafnium enriched overheads taken from the top of the column and a molten salt solvent circulated through the column to provide a liquid phase, and with molten salt solvent containing zirconium chloride being taken from the bottom of the distillation column. The improvements comprising: utilizing a molten salt solvent consisting principally of lithium chloride and at least one of sodium, potassium, magnesium and calcium chlorides; stripping of the zirconium chloride taken from the bottom of the distillation column by electrochemically reducing zirconium from the molten salt solvent; and utilizing a pressurized reflux condenser on the top of the column to add the hafnium chloride enriched overheads to the molten salt solvent previously stripped of zirconium chloride

40 CFR 421.330 - Applicability: Description of the primary zirconium and hafnium subcategory.

Science.gov (United States)

2010-07-01

... primary zirconium and hafnium subcategory. 421.330 Section 421.330 Protection of Environment ENVIRONMENTAL... CATEGORY Primary Zirconium and Hafnium Subcategory § 421.330 Applicability: Description of the primary zirconium and hafnium subcategory. The provisions of this subpart are applicable to discharges resulting...

Morphology of Si/tungsten-silicides/Si interlayers

International Nuclear Information System (INIS)

Theodore, N.; Secco d'Aragona, F.; Blackstone, S.

1992-01-01

Tungsten and tungsten-silicides are of interest for semiconductor technology because of their refractory nature, low electrical-resistivity and high electromigration-resistance. This paper presents the first formation of buried tungsten-silicide layers in silicon, by proximity adhesion. The interlayers, created by a combination of chemical vapor-deposition (CVD) and proximity-adhesion were studied using transmission electron-microscopy (TEM). The behavior of the layers in the presence and absence of an adjacent silicon-dioxide interlayer was also investigated. Buried silicide layers were successfully formed with or without the adjacent silicon-dioxide. The silicide formed continuous layers with single grains encompassing the width of the interlayer. Individual grains were globular, with cusps at grain boundaries. This caused interlayer-thicknesses to be non-uniform, with lower thickness values being present at the cusps. Occasional voids were observed at grain-boundary cusps. The voids were smaller and less frequent in the presence of an adjacent oxide-layer, due to flow of the oxide during proximity adhesion. Electron-diffraction revealed a predominance of tungsten-disilicide in the interlayers, with some free tungsten being present. Stresses in the silicide layers caused occasional glide dislocations to propagate into the silicon substrate beneath the interlayers. The dislocations propagate only ∼100 nm into the substrate and therefore should not be detrimental to use of the buried layers. Occasional precipitates were observed at the end of glide-loops. These possibly arise due to excess tungsten from the interlayer diffusion down the glide dislocation to finally precipitate out as tungsten-silicide

Analyses on Silicide Coating for LOCA Resistant Cladding

Energy Technology Data Exchange (ETDEWEB)

Sweidan, Faris B.; Lee, You Ho; Ryu, Ho Jin [KAIST, Daejeon (Korea, Republic of)

2015-10-15

A particular focus of accident-tolerant fuel has been cladding due to the rapid high-temperature oxidation of zirconium-based cladding with the evolution of H2 when steam is a reactant. Some key features of the coated cladding include high-temperature resistance to oxidation, lower processing temperatures, and a high melting point of the coating. Zirconium alloys exhibit a reasonably high melting temperature, so a coating for the cladding is appealing if the coating increases the high-temperature resistance to oxidation. In this case, the cladding is protected from complete oxidation. The cladding coating involves the application of zirconium silicide onto Zr-based cladding. Zirconium silicide coating is expected to produce a glassy layer that becomes more protective at elevated temperature. For this reason, silicide coatings on cladding offer the potential for improved reliability at normal operating temperatures and at the higher transient temperatures encountered during accidents. Although ceramic coatings are brittle and may have weak points to be used as coating materials, several ceramic coatings were successful and showed adherent behavior and high resistance to oxidation. In this study, the oxidation behavior of zirconium silicide and its oxidation kinetics are analyzed. Zirconium silicide is a new suggested material to be used as coatings on existing Zr-based cladding alloys, the aim of this study is to evaluate if zirconium silicide is applicable to be used, so they can be more rapidly developed using existing cladding technology with some modifications. These silicide coatings are an attractive alternative to the use of coatings on zirconium claddings or to the lengthy development of monolithic ceramic or ceramic composite claddings and coatings.

Analyses on Silicide Coating for LOCA Resistant Cladding

International Nuclear Information System (INIS)

Sweidan, Faris B.; Lee, You Ho; Ryu, Ho Jin

2015-01-01

A particular focus of accident-tolerant fuel has been cladding due to the rapid high-temperature oxidation of zirconium-based cladding with the evolution of H2 when steam is a reactant. Some key features of the coated cladding include high-temperature resistance to oxidation, lower processing temperatures, and a high melting point of the coating. Zirconium alloys exhibit a reasonably high melting temperature, so a coating for the cladding is appealing if the coating increases the high-temperature resistance to oxidation. In this case, the cladding is protected from complete oxidation. The cladding coating involves the application of zirconium silicide onto Zr-based cladding. Zirconium silicide coating is expected to produce a glassy layer that becomes more protective at elevated temperature. For this reason, silicide coatings on cladding offer the potential for improved reliability at normal operating temperatures and at the higher transient temperatures encountered during accidents. Although ceramic coatings are brittle and may have weak points to be used as coating materials, several ceramic coatings were successful and showed adherent behavior and high resistance to oxidation. In this study, the oxidation behavior of zirconium silicide and its oxidation kinetics are analyzed. Zirconium silicide is a new suggested material to be used as coatings on existing Zr-based cladding alloys, the aim of this study is to evaluate if zirconium silicide is applicable to be used, so they can be more rapidly developed using existing cladding technology with some modifications. These silicide coatings are an attractive alternative to the use of coatings on zirconium claddings or to the lengthy development of monolithic ceramic or ceramic composite claddings and coatings

Design and fabrication of hafnium tube to control the power of the irradiation test fuel in HANARO

Energy Technology Data Exchange (ETDEWEB)

Kim, D. H.; Lee, C. B.; Kim, Y. M.; Yang, Y. S.; Jung, Y. H

2003-05-01

For the irradiation test at HANARO, non-instrumentation capsule was manufactured and hafnium tube was used to control LHGR of HANARO. Hafnium tube can control the irradiation condition of HANARO similar to that of commercial reactor. Hafnium tube thickness was determined by the LHGR calculated at OR-4 irradiation hole to be installed the non-instrumented capsule. To fabricate the hafnium tube with hafnium plate, the fabrication method was determined by using the hafnium mechanical properties. And the tensile strength of hafnium was confirmed by tensile test. This report is confirmed the LHGR control at the OR-4 and the Hafnium fabrication for in used which the AFPCAP non-instrumented irradiation capsule.

Use of X-ray fluorescence analysis for the determination of hafnium in zircalloys

International Nuclear Information System (INIS)

Sato, I.M.; Salvador, V.L.R.; Lordello, A.R.

1985-01-01

The determination of hafnium at trace levels (ppm) in the presence of zirconium by X-ray fluorescence technique is presented. The samples were prepared in the form of double-layer pellets, with boric acid as the binding material. The most sensitive first order line of hafnium HfLα (0.157 nm), which is used analyticaly, has approximately 67% overlapping with second order line of zirconium ZrKα 1 , (0.079 nm). As the excitation potencial of zirconium is larger than hafnium, the best condition was selected, so that the interference of zirconium intensity would not be significant in hafnium analytical line. The method allowed the determination of hafnium above 5.0 ppm (LLd = 1.5 ppm) with an accuracy of less than 10%. (Author) [pt

Use of hafnium in control bars of nuclear reactors

International Nuclear Information System (INIS)

Ramirez S, J.R.; Alonso V, G.

2003-01-01

Recently the use of hafnium as neutron absorber material in nuclear reactors has been reason of investigation by virtue of that this material has nuclear properties as to the neutrons absorption and structural that can prolong the useful life of the control mechanisms of the nuclear reactors. In this work some of those more significant hafnium properties are presented like nuclear material. Also there are presented calculations carried out with the HELIOS code for fuel cells of uranium oxide and of uranium and plutonium mixed oxides under controlled conditions with conventional bars of boron carbide and also with similar bars to which are substituted the absorbent material by metallic hafnium, the results are presented in this work. (Author)

Production of Mo-99 using low-enriched uranium silicide

International Nuclear Information System (INIS)

Hutter, J.C.; Srinivasan, B.; Vicek, M.; Vandegrift, G.F.

1994-01-01

Over the last several years, uranium silicide fuels have been under development as low-enriched uranium (LEU) targets for Mo-99. The use of LEU silicide is aimed at replacing the UAl x alloy in the highly-enriched uranium dissolution process. A process to recover Mo-99 from low-enriched uranium silicide is being developed at Argonne National Laboratory. The uranium silicide is dissolved in alkaline hydrogen peroxide. Experiments performed to determine the optimum dissolution procedure are discussed, and the results of dissolving a portion of a high-burnup (>40%) U 3 Si 2 miniplate are presented. Future work related to Mo-99 separation and waste disposal are also discussed

Room temperature ferromagnetic gadolinium silicide nanoparticles

Science.gov (United States)

Hadimani, Magundappa Ravi L.; Gupta, Shalabh; Harstad, Shane; Pecharsky, Vitalij; Jiles, David C.

2018-03-06

A particle usable as T1 and T2 contrast agents is provided. The particle is a gadolinium silicide (Gd5Si4) particle that is ferromagnetic at temperatures up to 290 K and is less than 2 .mu.m in diameter. An MRI contrast agent that includes a plurality of gadolinium silicide (Gd.sub.5Si.sub.4) particles that are less than 1 .mu.m in diameter is also provided. A method for creating gadolinium silicide (Gd5Si4) particles is also provided. The method includes the steps of providing a Gd5Si4 bulk alloy; grinding the Gd5Si4 bulk alloy into a powder; and milling the Gd5Si4 bulk alloy powder for a time of approximately 20 minutes or less.

The corrosion behavior of hafnium in high-temperature-water environments

Energy Technology Data Exchange (ETDEWEB)

Rishel, D.M.; Smee, J.D.; Kammenzind, B.F.

1999-10-01

The high-temperature-water corrosion performance of hafnium is evaluated. Corrosion kinetic data are used to develop correlations that are a function of time and temperature. The evaluation is based on corrosion tests conducted in out-of-pile autoclaves and in out-of-flux locations of the Advanced Test Reactor (ATR) at temperatures ranging from 288 to 360 C. Similar to the corrosion behavior of unalloyed zirconium, the high-temperature-water corrosion response of hafnium exhibits three corrosion regimes: pretransition, posttransition, and spalling. In the pretransition regime, cubic corrosion kinetics are exhibited, whereas in the posttransition regime, linear corrosion kinetics are exhibited. Because of the scatter in the spalling regime data, it is not reasonable to use a best fit of the data to describe spalling regime corrosion. Data also show that neutron irradiation does not alter the corrosion performance of hafnium. Finally, the data illustrate that the corrosion rate of hafnium is significantly less than that of Zircaloy-2 and Zircaloy-4.

Palladium silicide - a new contact for semiconductor radiation detectors

International Nuclear Information System (INIS)

Totterdell, D.H.J.

1981-11-01

Silicide layers can be used as low resistance contacts in semiconductor devices. The formation of a metal rich palladium silicide Pd 2 Si is discussed. A palladium film 100A thick is deposited at 300 0 C and the resulting silicide layer used as an ohmic contact in an n + p silicon detector. This rugged contact has electrical characteristics comparable with existing evaporated gold contacts and enables the use of more reproducible bonding techniques. (author)

Corrosion potentials of hafnium in molten alkaline-earth metal chlorides

International Nuclear Information System (INIS)

Kovalik, O.Yu.; Tkhaj, V.D.

2000-01-01

Corrosion potentials of hafnium in molten calcium, strontium and barium chlorides are measured and their temperature dependences are determined. It is stated that the corrosion potential of hafnium becomes more electropositive with an increase of the environment temperature. If the temperature is the same the potential shifts to the interval of more electronegative values in the row of CaCl 2 , SrCl 2 , BaCl 2 which corresponds to a lesser corrosion rate in environments positioned from left to right. the comparison of hafnium corrosion potentials with previously measured values for titanium and zirconium shows that a metal activity decrease results in a more electronegative corrosion potential [ru

Electronic structure of pentacene on hafnium studied by ultraviolet photoelectron spectroscopy

International Nuclear Information System (INIS)

Kang, Seong Jun; Yi, Yeon Jin; Kim, Chung Yi; Whang, Chung Nam

2005-01-01

The electronic structure of pentacene on hafnium, which is a low work function metal, was analyzed by using ultraviolet photoelectron spectroscopy. The energy level alignment was studied by using the onset of the highest occupied molecular orbital level and the shift of the vacuum level of the pentacene layer, which was deposited on a clean hafnium surface in a stepwise manner. The measured onset of the highest occupied molecular orbital energy level was 1.52 eV from the Fermi level of hafnium. The vacuum level was shifted 0.28 eV toward higher binding energy with additional pentacene layers, which means an interfacial dipole exists at the interface between pentacene and hafnium. We confirm that a small electron injection barrier can be achieved by inserting a low work function metal in a pentacene thin-film transistor.

Synthesis of Hafnium-Based Ceramic Materials for Ultra-High Temperature Aerospace Applications

Science.gov (United States)

Johnson, Sylvia; Feldman, Jay

2004-01-01

This project involved the synthesis of hafnium (Hf)-based ceramic powders and Hf-based precursor solutions that were suitable for preparation of Hf-based ceramics. The Hf-based ceramic materials of interest in this project were hafnium carbide (with nominal composition HE) and hafnium dioxide (HfO2). The materials were prepared at Georgia Institute of Technology and then supplied to research collaborators Dr. Sylvia Johnson and Dr. Jay Feldman) at NASA Ames Research Center.

A study of CoSix silicide formed by recoil implantation

International Nuclear Information System (INIS)

Kwok, H.L.

1989-01-01

This work investigated the formation of CoSi x silicides on n-Si by recoil implantation through a thin cobalt layer using an inert gas ion beam. The results suggest the formation of a very shallow (35 to 45 nm) silicide surface layer under the specific conditions of preparation. The surface layer resistivity was comparable to values reported for Co 2 Si and CoSi, although below the surface, the resistivity decreased. This appeared to suggest a change-over from cobalt-rich silicides near the surface to a more conducting silicide (CoSi 2 ) at the interface. (author)

Application of hafnium hydride control rod to large sodium cooled fast breeder reactor

Energy Technology Data Exchange (ETDEWEB)

Ikeda, Kazumi, E-mail: kazumi_ikeda@mfbr.mhi.co.jp [Mitsubishi FBR Systems, Inc., 34-17, Jingumae 2-Chome, Shibuya-ku, Tokyo 150-0001 (Japan); Moriwaki, Hiroyuki, E-mail: hiroyuki_moriwaki@mfbr.mhi.co.jp [Mitsubishi FBR Systems, Inc., 34-17, Jingumae 2-Chome, Shibuya-ku, Tokyo 150-0001 (Japan); Ohkubo, Yoshiyuki, E-mail: yoshiyuki_okubo@mfbr.mhi.co.jp [Mitsubishi FBR Systems, Inc., 34-17, Jingumae 2-Chome, Shibuya-ku, Tokyo 150-0001 (Japan); Iwasaki, Tomohiko, E-mail: tomohiko.iwasaki@qse.tohoku.ac.jp [Department of Quantum Science and Energy Engineering, Tohoku University, Aoba, Aramaki, Aoba-ku, Sendai-shi, Miyagi-ken 980-8579 (Japan); Konashi, Kenji, E-mail: konashi@imr.tohoku.ac.jp [Institute for Materials Research, Tohoku University, Narita-cho, Oarai-machi, Higashi-Ibaraki-gun, Ibaraki-ken 311-1313 (Japan)

2014-10-15

Highlights: • Application of hafnium hydride control rod to large sodium cooled fast breeder reactor. • This paper treats application of an innovative hafnium hydride control rod to a large sodium cooled fast breeder reactor. • Hydrogen absorption triples the reactivity worth by neutron spectrum shift at H/Hf ratio of 1.3. • Lifetime of the control rod quadruples because produced daughters of hafnium isotopes are absorbers. • Nuclear and thermal hydraulic characteristics of the reactor are as good as or better than B-10 enriched boron carbide. - Abstract: This study treats the feasibility of long-lived hafnium hydride control rod in a large sodium-cooled fast breeder reactor by nuclear and thermal analyses. According to the nuclear calculations, it is found that hydrogen absorption of hafnium triples the reactivity by the neutron spectrum shift at the H/Hf ratio of 1.3, and a hafnium transmutation mechanism that produced daughters are absorbers quadruples the lifetime due to a low incineration rate of absorbing nuclides under irradiation. That is to say, the control rod can function well for a long time because an irradiation of 2400 EFPD reduces the reactivity by only 4%. The calculation also reveals that the hafnium hydride control rod can apply to the reactor in that nuclear and thermal characteristics become as good as or better than 80% B-10 enriched boron carbide. For example, the maximum linear heat rate becomes 3% lower. Owing to the better power distribution, the required flow rate decreases approximately by 1%. Consequently, it is concluded on desk analyses that the long lived hafnium hydride control rod is feasible in the large sodium-cooled fast breeder reactor.

Analysis of reactivity accidents of the RSG-GAS core with silicide fuel

International Nuclear Information System (INIS)

Tukiran

2002-01-01

The fuels of RSG-GAS reactor is changed from uranium oxide to uranium silicide. For time being, the fuel of RSG-GAS core are mixed up between oxide and silicide fuels with 250 gr of loading and 2.96 g U/cm 3 of density, respectively. While, silicide fuel with 300 gr of loading is still under research. The advantages of silicide fuels are can be used in high density, so that, it can be stayed longer in the core at higher burn-up, therefore, the length of cycle is longer. The silicide fuel in RSG-GAS core is used in step-wise by using mixed up core. Firstly, it is used silicide fuel with 250 gr of loading and then, silicide fuel with 300 gr of loading (3.55 g U/cm 3 of density). In every step-wise of fuel loading must be analysed its safety margin. In this occasion, it is analysed the reactivity accident of RSG-GAS core with 300 gr of silicide fuel loading. The calculation was done by using POKDYN code which available at P2TRR. The calculation was done by reactivity insertion at start up and power rangers. From all cases which were have been done, the results of analysis showed that there is no anomaly and safety margin break at RSG-GAS core with 300 gr silicide fuel loading

Neutronic design of the RSG-GAS silicide core

Energy Technology Data Exchange (ETDEWEB)

Sembiring, T.M.; Kuntoro, I.; Hastowo, H. [Center for Development of Research Reactor Technology National Nuclear Energy Agency BATAN, PUSPIPTEK Serpong Tangerang, 15310 (Indonesia)

2002-07-01

The objective of core conversion program of the RSG-GAS multipurpose reactor is to convert the fuel from oxide, U{sub 3}O{sub 8}-Al to silicide, U{sub 3}Si{sub 2}-Al. The aim of the program is to gain longer operation cycle by having, which is technically possible for silicide fuel, a higher density. Upon constraints of the existing reactor system and utilization, an optimal fuel density in amount of 3.55 g U/cc was found. This paper describes the neutronic parameter design of the silicide equilibrium core and the design of its transition cores as well. From reactivity control point of view, a modification of control rod system is also discussed. All calculations are carried out by means of diffusion codes, Batan-EQUIL-2D, Batan-2DIFF and -3DIFF. The silicide core shows that longer operation cycle of 32 full power days can be achieved without decreasing the safety criteria and utilization capabilities. (author)

X-Ray Photoemission Study of the Oxidation of Hafnium

International Nuclear Information System (INIS)

Chourasia, R.; Hickman, J.L.; Miller, R.L.; Nixon, G.A.; Seabolt, M.A.

2011-01-01

About 20 angstrom of hafnium were deposited on silicon substrates using the electron beam evaporation technique. Two types of samples were investigated. In one type, the substrate was kept at the ambient temperature. After the deposition, the substrate temperature was increased to 100, 200, and 300 degree C. In the other type, the substrate temperature was held fixed at some value during the deposition. For this type, the substrate temperatures used were 100, 200, 300, 400, 500, 550, and 600 degree C. The samples were characterized in situ by the technique of X-ray photoelectron spectroscopy. No trace of elemental hafnium is observed in the deposited overlayer. Also, there is no evidence of any chemical reactivity between the overlayer and the silicon substrate over the temperature range used. The hafnium overlayer shows a mixture of the dioxide and the suboxide. The ratio of the suboxide to dioxide is observed to be more in the first type of samples. The spectral data indicate that hafnium has a strong affinity for oxygen. The overlayer gets completely oxidized to form HfO 2 at substrate temperature around 300 degree C for the first type of samples and at substrate temperature greater than 550 degree C for the second type

X-Ray Photoemission Study of the Oxidation of Hafnium

Directory of Open Access Journals (Sweden)

A. R. Chourasia

2009-01-01

Full Text Available About 20 Å of hafnium were deposited on silicon substrates using the electron beam evaporation technique. Two types of samples were investigated. In one type, the substrate was kept at the ambient temperature. After the deposition, the substrate temperature was increased to 100, 200, and 300∘C. In the other type, the substrate temperature was held fixed at some value during the deposition. For this type, the substrate temperatures used were 100, 200, 300, 400, 500, 550, and 600∘C. The samples were characterized in situ by the technique of X-ray photoelectron spectroscopy. No trace of elemental hafnium is observed in the deposited overlayer. Also, there is no evidence of any chemical reactivity between the overlayer and the silicon substrate over the temperature range used. The hafnium overlayer shows a mixture of the dioxide and the suboxide. The ratio of the suboxide to dioxide is observed to be more in the first type of samples. The spectral data indicate that hafnium has a strong affinity for oxygen. The overlayer gets completely oxidized to form HfO2 at substrate temperature around 300∘C for the first type of samples and at substrate temperature greater than 550∘C for the second type.

High temperature diffusion of hafnium in tungsten and a tungsten-hafnium carbide alloy

International Nuclear Information System (INIS)

Ozaki, Y.; Zee, R.H.

1994-01-01

Refractory metals and ceramics are used extensively in energy systems due to their high temperature properties. This is particularly important in direct conversion systems where thermal to electric conversion efficiency is a direct function of temperature. Tungsten, which has the highest melting temperature among elemental metals, does not possess sufficient creep resistance at temperature above 1,600 K. Different dispersion strengthened tungsten alloys have been developed to extend the usefulness of tungsten to higher temperatures. One of these alloys, tungsten with 0.4 mole percent of finely dispersed HfC particles (W-HfC), has the optimum properties for high temperature applications. Hafnium carbide is used as the strengthening agent due to its high chemical stability and its compatibility with tungsten. The presence of HfC particles retards the rate of grain growth as well as restricting dislocation motion. Both of which are beneficial for creep resistance. The long term behavior of this alloy depends largely on the evolution of its microstructure which is governed by the diffusion of its constituents. Data on the diffusion of carbon in tungsten and tungsten self-diffusion are available, but no direct measurements have been made on the diffusion of hafnium in tungsten. The only diffusion data available are estimated from a coarsening study and these data are highly unreliable. In this study, the diffusion behavior of hafnium in pure tungsten and in a W-HfC alloy was directly measured by means of Secondary Ion Mass Spectroscopy (SIMS). The selection of the W-HfC alloy is due to its importance in high temperature engineering applications, and its higher recrystallization temperature. The presence of HfC particles in tungsten restricts grain growth resulting in better high temperature creep resistance. The higher recrystallization temperature allows measurements to be made over a wider range of temperatures at a relatively constant grain size

Room temperature ferromagnetic gadolinium silicide nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Hadimani, Magundappa Ravi L.; Gupta, Shalabh; Harstad, Shane; Pecharsky, Vitalij; Jiles, David C.

2018-03-06

A particle usable as T₁ and T₂ contrast agents is provided. The particle is a gadolinium silicide (Gd₅Si₄) particle that is ferromagnetic at temperatures up to 290 K and is less than 2 .mu.m in diameter. An MRI contrast agent that includes a plurality of gadolinium silicide (Gd.sub.5Si.sub.4) particles that are less than 1 .mu.m in diameter is also provided. A method for creating gadolinium silicide (Gd₅Si₄) particles is also provided. The method includes the steps of providing a Gd₅Si₄ bulk alloy; grinding the Gd₅Si₄ bulk alloy into a powder; and milling the Gd₅Si₄ bulk alloy powder for a time of approximately 20 minutes or less.

Irradiation behavior of experimental miniature uranium silicide fuel plates

International Nuclear Information System (INIS)

Hofman, Gerard L.; Neimark, L.A.; Mattas, R.F.

1983-01-01

Uranium silicides, because of their relatively high uranium density, were selected as candidate dispersion fuels for the higher fuel densities required in the Reduced Enrichment Research and Test Reactor (RERTR) Program. Irradiation experience with this type of fuel, however, was limited to relatively modest fission densities in the bulk form, on the order of 7 x 10 20 cm -3 , far short of he approximately 20 x 10 20 cm -3 goal established for the RERTR Program. The purpose of the irradiation experiments on silicide fuels in the ORR, therefore, was to investigate the intrinsic irradiation behavior of uranium silicide as a dispersion fuel. Of particular interest was the interaction between the silicide particles and the aluminum matrix, the swelling behavior of the silicide particles, and the maximum volume fraction of silicide particles that could be contained in the aluminum matrix. The first group of experimental 'mini' fuel plates have recently reached the program's goal burnup and are in various stages of examination. Although the results to date indicate some limitations, it appears that within the range of parameters examined thus far the uranium silicide dispersion holds promise for satisfying most of the needs of the RERTR Program. The twelve experimental silicide dispersion fuel plates that were irradiated to approximately their goal exposure show the 30-vol % U 3 Si-Al plates to be in a stage of relatively rapid fission-gas-driven swelling at a fission density of 2 x 10 20 cm -3 . This fuel swelling will likely result in unacceptably large plate-thickness increases. The U 3 Si plates appear to be superior in this respect; however, they, too, are starting to move into the rapid fuel-swelling stage. Analysis of the currently available post irradiation data indicates that a 40-vol % dispersed fuel may offer an acceptable margin to the onset of unstable thickness changes at exposures of 2 x 10 21 fission/cm 3 . The interdiffusion between fuel and matrix

Determination of accurate metal silicide layer thickness by RBS

International Nuclear Information System (INIS)

Kirchhoff, J.F.; Baumann, S.M.; Evans, C.; Ward, I.; Coveney, P.

1995-01-01

Rutherford Backscattering Spectrometry (RBS) is a proven useful analytical tool for determining compositional information of a wide variety of materials. One of the most widely utilized applications of RBS is the study of the composition of metal silicides (MSi x ), also referred to as polycides. A key quantity obtained from an analysis of a metal silicide is the ratio of silicon to metal (Si/M). Although compositional information is very reliable in these applications, determination of metal silicide layer thickness by RBS techniques can differ from true layer thicknesses by more than 40%. The cause of these differences lies in how the densities utilized in the RBS analysis are calculated. The standard RBS analysis software packages calculate layer densities by assuming each element's bulk densities weighted by the fractional atomic presence. This calculation causes large thickness discrepancies in metal silicide thicknesses because most films form into crystal structures with distinct densities. Assuming a constant layer density for a full spectrum of Si/M values for metal silicide samples improves layer thickness determination but ignores the underlying physics of the films. We will present results of RBS determination of the thickness various metal silicide films with a range of Si/M values using a physically accurate model for the calculation of layer densities. The thicknesses are compared to scanning electron microscopy (SEM) cross-section micrographs. We have also developed supporting software that incorporates these calculations into routine analyses. (orig.)

Si-Ge Nano-Structured with Tungsten Silicide Inclusions

Science.gov (United States)

Mackey, Jon; Sehirlioglu, Alp; Dynys, Fred

2014-01-01

Traditional silicon germanium high temperature thermoelectrics have potential for improvements in figure of merit via nano-structuring with a silicide phase. A second phase of nano-sized silicides can theoretically reduce the lattice component of thermal conductivity without significantly reducing the electrical conductivity. However, experimentally achieving such improvements in line with the theory is complicated by factors such as control of silicide size during sintering, dopant segregation, matrix homogeneity, and sintering kinetics. Samples are prepared using powder metallurgy techniques; including mechanochemical alloying via ball milling and spark plasma sintering for densification. In addition to microstructural development, thermal stability of thermoelectric transport properties are reported, as well as couple and device level characterization.

Elaboration and characterisation of yttrium oxide and hafnium oxide powders by the sol-gel process

International Nuclear Information System (INIS)

Hours, T.

1988-01-01

The two classical sol-gel processes, colloidal and polymeric are studied for the preparation of yttrium oxide and hafnium oxide high performance powders. In the colloidal process, controlled and reproducible conditions for the preparation of yttrium oxide and hafnium oxide sols from salts or alkoxides are developed and the hydrothermal synthesis monodisperse hafnium oxide colloids is studied. The polymeric process is studied with hafnium ethyl-hexylate, hydrolysis kinetics for controlled preparation of sols and gels is investigated. Each step of preparation is detailed and powders obtained are characterized [fr

Modelling of Zirconium and Hafnium separation using continuous annular chromatography

International Nuclear Information System (INIS)

Moch-Setyadji; Endang Susiantini

2014-01-01

Nuclear degrees of zirconium in the form of a metal alloy is the main material for fuel cladding of NPP. Zirconium is also used as sheathing UO 2 kernel in the form of ZrC as a substitute of SiC in the fuel elements of High Temperature Reactor (HTR). Difficulty separating hafnium from zirconium because it has a lot of similarities in the chemical properties of Zr and Hf. Annular chromatography is a device that can be used for separating of zirconium and hafnium to obtain zirconium nuclear grade. Therefore, it is necessary to construct the mathematical modelling that can describe the separation of zirconium and hafnium in the annular chromatography containing anion resin dowex-1X8. The aim of research is to perform separation simulation by using the equilibrium model and mass transfer coefficient resulted from research. Zr and Hf feed used in this research were 26 and 1 g/l, respectively. Height of resin (L), angular velocity (ω) and the superficial flow rate (uz) was varied to determine the effect of each parameter on the separation of Zr and Hf. By using Kd and Dv values resulted previous research. Simulation results showed that zirconium and hafnium can be separated using a continuous annular chromatography with high resin (long bed) 50 cm, superficial flow rate of 0.001 cm/s, the rotation speed of 0.006 rad/min and 20 cm diameter annular. In these conditions the results obtained zirconium concentration of 10,303.226 g/m 3 and hafnium concentration of 12.324 g/m 3 (ppm). (author)

Joint titrimetric determination of zirconium and hafnium

International Nuclear Information System (INIS)

Vazquez, Cristina; Botbol, Moises; Bianco de Salas, G.N.; Cornell de Casas, M.I.

1980-01-01

A method for the joint titrimetric determination of zirconium and hafnium, which are elements of similar chemical behaviour, is described. The disodic salt of the ethylendiaminetetracetic acid (EDTA) is used for titration, while xilenol orange serves as final point indicator. Prior to titration it is important to evaporate with sulfuric acid, the solution resulting from the zirconium depolymerization process, to adjust the acidity and to eliminate any interferences. The method, that allows the quick and precise determination of zirconium and hafnium in quantities comprised between 0.01 and mg, was applied to the analysis of raw materials and of intermediate and final products in the fabrication of zirconium sponge and zircaloy. (M.E.L.) [es

Compositional characterization of hafnium alloy used as control rod material in nuclear reactor

International Nuclear Information System (INIS)

Sharma, P.K.; Bassan, M.K.T.; Avhad, D.K.; Singhal, R.K.

2014-01-01

Hafnium (Hf) is a heavy, steel-gray metal in the reactive metals group that is very closely related to zirconium (Zr) and forms a continuous solid-solution at all concentrations of zirconium and hafnium. Hafnium occurs naturally with zirconium at a ratio of approximately 1:50 and is produced exclusively as a co-product of nuclear-grade zirconium. It is used in a variety of applications where few substitutes are available. Thus with its relatively high thermal neutron absorption cross-section, hafnium's biggest application is as control rod material in nuclear reactors. During this work, major (Zirconium (Zr), Cobalt (Co) and Molybdenum (Mo)) and trace ((Iron (Fe), Nickel (Ni) and Titanium (Ti)) elements were measured in the bulk matrices of Hf. These materials are also associated with other impurities such as O, N, H etc.

Bond formation in hafnium atom implantation into SiC induced by high-energy electron irradiation

International Nuclear Information System (INIS)

Yasuda, H.; Mori, H.; Sakata, T.; Naka, M.; Fujita, H.

1992-01-01

Bilayer films of Hf (target atoms)/α-SiC (substrate) were irradiated with 2 MeV electrons in an ultra-high voltage electron microscope (UHVEM), with the electron beam incident on the hafnium layer. As a result of the irradiation, hafnium atoms were implanted into the SiC substrate. Changes in the microstructure and valence electronic states associated with the implantation were studied by a combination of UHVEM and Auger valence electron spectroscopy. The implantation process is summarized as follows. (1) Irradiation with 2 MeV electrons first induces a crystalline-to-amorphous transition in α-SiC. (2) Hafnium atoms which have been knocked-off from the hafnium layer by collision with the 2 MeV electrons are implanted into the resultant amorphous SiC. (3) The implanted hafnium atoms make preferential bonding to carbon atoms. (4) With continued irradiation, the hafnium atoms repeat the displacement along the beam direction and the subsequent bonding with the dangling hybrids of carbon and silicon. The repetition of the displacement and subsequent bonding lead to the deep implantation of hafnium atoms into the SiC substrate. It is concluded that implantation successfully occurs when the bond strength between a constituent atom of a substrate and an injected atom is stronger than that between constituent atoms of a substrate. (Author)

Hafnium Resonance Parameter Analysis Using Neutron Capture and Transmission Experiments

International Nuclear Information System (INIS)

MJ Trbovich; DP Barry; RE Slovacck; Y Danon; RC Block; JA Burke; NJ Drindak; G Leinweber; RV Ballad

2004-01-01

The focus of this work is to determine resonance parameters for stable hafnium isotopes in the 0.005-200 eV region, with special emphasis on the overlapping 176 Hf and 178 Hf resonances near 8 eV. The large neutron cross section of hafnium, combined with its corrosion resistance and excellent mechanical properties, make it a useful material for controlling nuclear reactions. Experiments measuring neutron capture and transmission were performed at the Rensselaer Polytechnic Institute (RPI) electron linear accelerator (LINAC) using the time of flight method. 6 Li glass scintillation detectors were used for transmission experiments at flight path lengths of 15 and 25 m. Capture experiments were done using a sixteen section NaI(Tl) multiplicity detector at a flight path length of 25 m. These experiments utilized various thicknesses of metallic and isotopically-enriched liquid samples. The liquid samples were designed to provide information on the 176 Hf and 178 Hf contributions to the 8 eV doublet without saturation. Data analysis was done using the R-matrix Bayesian code SAMMY version M6 beta. SAMMY is able to account for experimental resolution effects for each of the experimental setups at the RPI LINAC, and also can correct for multiple scattering effects in neutron capture yield data. The combined capture and transmission data analysis yielded resonance parameters for all hafnium isotopes from 0.005-200 eV. Resonance integrals were calculated along with errors for each hafnium isotope using the NJOY [1] and INTER [2] codes. The isotopic resonance integrals calculated were significantly different than previously published values; however the calculated elemental hafnium resonance integral changed very little

Synthesis and design of silicide intermetallic materials

Energy Technology Data Exchange (ETDEWEB)

Petrovic, J.J.; Castro, R.G.; Butt, D.P. [Los Alamos National Lab., NM (United States)] [and others

1997-04-01

The overall objective of this program is to develop structural silicide-based materials with optimum combinations of elevated temperature strength/creep resistance, low temperature fracture toughness, and high temperature oxidation and corrosion resistance for applications of importance to the U.S. processing industry. A further objective is to develop silicide-based prototype industrial components. The ultimate aim of the program is to work with industry to transfer the structural silicide materials technology to the private sector in order to promote international competitiveness in the area of advanced high temperature materials and important applications in major energy-intensive U.S. processing industries. The program presently has a number of developing industrial connections, including a CRADA with Schuller International Inc. targeted at the area of MoSi{sub 2}-based high temperature materials and components for fiberglass melting and processing applications. The authors are also developing an interaction with the Institute of Gas Technology (IGT) to develop silicides for high temperature radiant gas burner applications, for the glass and other industries. Current experimental emphasis is on the development and characterization of MoSi{sub 2}-Si{sub 3}N{sub 4} and MoSi{sub 2}-SiC composites, the plasma spraying of MoSi{sub 2}-based materials, and the joining of MoSi{sub 2} materials to metals.

Zirconium and hafnium in the southeastern Atlantic States

Science.gov (United States)

Mertie, J.B.

1958-01-01

The principal source of zirconium and hafnium is zircon, though a minor source is baddeleyite, mined only in Brazil. Zircon is an accessory mineral in igneous, metamorphic, and sedimentary rocks, but rarely occurs in hardrock in minable quantities. The principal sources of zircon are therefore alluvial deposits, which are mined in many countries of five continents. The principal commercial deposits in the United States are in Florida, though others exist elsewhere in the southeastern Coastal Plain. The evidence indicates that conditions for the accumulation of workable deposits of heavy minerals were more favorable during the interglacial stages of the Pleistocene epoch than during Recent time. Therefore detrital ores of large volume and high tenor are more likely to be found in the terrace deposits than along the present beaches. Other concentrations of heavy minerals, however, are possible at favored sites close to the Fall Line where the Tuscaloosa formation rests upon the crystalline rocks of the Piedmont province. A score of heavy and semiheavy minerals occur in the detrital deposits of Florida, but the principal salable minerals are ilmenite, leucoxene, rutile, and zircon, though monazite and staurolite are saved at some mining plants. Commercial deposits of heavy minerals are generally required to have a tenor of 4 percent, though ores with a lower tenor can be mined at a profit if the content of monazite is notably high. The percentages of zircon in the concentrates ranges from 10 to 16 percent, and in eastern Florida from 13 to 15 percent. Thus the tenor in zircon of the ore-bearing sands ranges from 0.4 to 0.6 percent. The content of hafnium in zircon is immaterial for many uses, but for some purposes very high or very low tenors in hafnium are required. Alluvial zircon cannot be separated into such varieties, which, if needed, must be obtained from sources in bedrock. It thus becomes necessary to determine the Hf : Zr ratios in zircon from many kinds of

Niobium and hafnium grown on porous membranes

International Nuclear Information System (INIS)

Morant, C.; Marquez, F.; Campo, T.; Sanz, J.M.; Elizalde, E.

2010-01-01

In this work we report on a method for fabricating highly ordered nanostructures of niobium and hafnium metals by physical vapour deposition using two different templates: anodized aluminum oxide membranes (AAO) and zirconium onto AAO membranes (Zr/AAO). The growth mechanism of these metal nanostructures is clearly different depending on the material used as a template. A different morphology was obtained by using AAO or Zr/AAO templates: when the metal is deposited onto AAO membranes, nanospheres with ordered hexagonal regularity are obtained; however, when the metal is deposited onto a Zr/AAO template, highly ordered nanocones are formed. The experimental approach described in this work is simple and suitable for synthesizing nanospheres or nanoholes of niobium and hafnium metals in a highly ordered structure.

Analytical study of zirconium and hafnium α-hydroxy carboxylates

International Nuclear Information System (INIS)

Terra, V.R.

1991-01-01

The analytical study of zirconium and hafnium α-hydroxy carboxylates was described. For this purpose dl-mandelic, dl-p-bromo mandelic, dl-2-naphthyl glycolic, and benzilic acids were prepared. These were used in conjunction with glycolic, dl-lactic, dl-2-hydroxy isovaleric, dl-2-hydroxy hexanoic, and dl-2-hydroxy dodecanoic acids in order to synthesize the zirconium(IV) and hafnium(IV) tetrakis(α-hydroxy carboxylates). The compounds were characterized by melting point determination, infrared spectroscopy, thermogravimetric analysis, calcination to oxides and X-ray diffractometry by the powder method. (C.G.C)

High temperature evaporation of titanium, zirconium and hafnium carbides

International Nuclear Information System (INIS)

Gusev, A.I.; Rempel', A.A.

1991-01-01

Evaporation of cubic nonstoichiometric carbides of titanium, zirconium and hafnium in a comparatively low-temperature interval (1800-2700) with detailed crystallochemical sample certification is studied. Titanium carbide is characterized by the maximum evaporation rate: at T>2300 K it loses 3% of sample mass during an hour and at T>2400 K titanium carbide evaporation becomes extremely rapid. Zirconium and hafnium carbide evaporation rates are several times lower than titanium carbide evaporation rates at similar temperatures. Partial pressures of metals and carbon over the carbides studied are calculated on the base of evaporation rates

Determination of hafnium, molybdenum, and vanadium in niobium and niobium-based alloys by atomic absorption spectrometry

International Nuclear Information System (INIS)

Ide, Kunikazu; Kobayashi, Takeshi; Sudo, Emiko.

1985-01-01

The analytical procedure is as follows: Weigh 1 g of a sample and put it into a 100 cm 3 PTFE beaker. Add 5 ml of distilled water and 5 ml of hydrofluoric acid, and then heat the solution on a hot plate, adding 3 ml of nitric acid dropwise. Dilute the solution to 100 cm 3 with distilled water. When hafnium is determined, add 2 g of diammonium titanium hexafluoride ((NH 4 ) 2 TiF 6 )) before dilution. Working standard solutions are prepared by adding the stock standard solutions of hafnium, molybdenum, and vanadium into niobium solutions. When hafnium is determined, add 2 g of (NH 4 ) 2 TiF 6 and the alloying elements in amounts corresponding to those in sample solutions into the working standard solutions. The tolerable amounts of hydrofluoric acid were 2.9 M, 2.1 M, and 3.1 M and those of nitric acid were 1.0 M, 1.6 M, and 1.6 M for hafnium, molybdenum, and vanadium, respectively. It was found that (NH 4 ) 2 TiF 6 greatly increased the sensitivity for hafnium determination. Niobium showed minus effect for hafnium and plus effect for molybdenum and vanadium. The atomic absorption of molybdenum and vanadium were not influenced by the presence of 20 % of each alloying element, while the atomic absorption of hafnium was given plus effect by 20 % of zirconium, iron, cobalt, nickel, manganese, chromium or vanadium and minus effect by 20 % tungsten. The analytical values of hafnium, molybdenum, and vanadium in niobium-based alloys by this method showed a good agreement with those by X-ray fluorescence analysis. The lower limits of determination (S/N=2) were 0.05, 0.001, and 0.002 % and the relative standard deviation were 3, 1, and 1.5 % for hafnium, molybdenum, and vanadium, respectively. (author)

Magnesium silicide production and silane synthesis on its basis

International Nuclear Information System (INIS)

Taurbaev, T.I.; Mukashev, F.A.; Manakov, S.M.; Francev, U.V.; Kalblanbekov, B.M.; Akhter, P.; Abbas, M.; Hussain, A.

2003-01-01

We had developed an alternative method of production of magnesium silicide with use of ferroalloys of silicon. Magnesium silicide is raw material for silane synthesis. The essence of the method consist of sintering FS -75 (ferrosilicium with 75 % of silicon and 25 % of iron, made by ferroalloy factories) with metal magnesium at temperature of 650 deg. C. The X-ray analysis has shown formation of magnesium silicide. That is further used for synthesis of silane. The output of silane is 60 % in respect of the contents of silicon. After removing the water vapors the mass-spectrometer analysis has estimated the purity of silane as 99.95 % with no detection of phosphine and diborane. (author)

Thermal stability of Ni-Pt-Ta alloy silicides on epi-Si1-xCx

International Nuclear Information System (INIS)

Yoo, Jung-Ho; Chang, Hyun-Jin; Min, Byoung-Gi; Ko, Dae-Hong; Cho, Mann-Ho; Sohn, Hyunchul; Lee, Tae-Wan

2008-01-01

We investigated the silicide formation in Ni/epi-Si 1-x C x systems. Ni-Pt and Ni-Pt-Ta films were deposited on epi-Si 1-x C x /Si substrates by DC magnetron sputtering and processed at various temperatures. The sheet resistance of the silicide from the Ni alloy/epi-Si 1-x C x systems was maintained at low values compared to that from Ni/Si systems. By TEM and EDS analyses, we confirmed the presence of a Pt alloy layer at the top of the Ni-silicide layer. The stability of the silicide layer in the Ni alloy/epi-Si 1-x C x system is explained by not only the Pt rich layer on the top of the Ni-silicide layer, but also by the presence of a small amount of Pt in the Ni-silicide layer or at the grain boundaries. And both the thermal stability and the morphology of silicide were greatly improved by the addition of Ta in Ni-Pt films

Reprocessing of LEU silicide fuel at Dounreay

International Nuclear Information System (INIS)

Cartwright, P.

1996-01-01

UKAEA have recently reprocessed two LEU silicide fuel elements in their MTR fuel reprocessing plant at Dounreay. The reprocessing was undertaken to demonstrate UKAEA's commitment to the world-wide research reactor communities future needs. Reprocessing of LEU silicide fuel is seen as a waste treatment process, resulting in the production of a liquid feed suitable for conditioning in a stable form of disposal. The uranium product from the reprocessing can be used as a blending feed with the HEU to produce LEU for use in the MTR cycle. (author)

Separation of zirconium from hafnium by ion exchange

Energy Technology Data Exchange (ETDEWEB)

Felipe, Elaine C.B.; Palhares, Hugo G.; Ladeira, Ana Claudia Q., E-mail: elainecfelipe@yahoo.com.br, E-mail: hugopalhares@gmail.com, E-mail: ana.ladeira@cdtn.br [Centro de Desenvolvimento da Tecnologia Nuclear (CDTN/CNEN-MG), Belo Horizonte, MG (Brazil)

2013-07-01

Zirconium and hafnium are two of the most important metals for the nuclear industry. Hafnium occurs in all zirconium ores usually in the range 2 - 3%. However, for the most nuclear industry applications, it is necessary to use a zirconium of extremely pure level. The current work consists in the separation of zirconium and hafnium by the ion exchange method in order to obtain a zirconium concentrate of high purity. The zirconium and hafnium liquors were produced from the leaching of the Zr(OH){sub 4} and Hf(OH){sub 4} with nitric acid for 24 hours. From these two liquors it was prepared one solution containing 7.5 x 10{sup -2} mol L{sup -1} of Zr and 5.8 x 10{sup -3} mol L{sup -1} of Hf with acidity of 1 M. Ion exchange experiments were carried out in batch with the resins Dowex 50WX4, Dowex 50WX8 100, Dowex 50WX8 50, Amberlite IR-120 and Marathon C at constant temperature 28 deg C. Other variables such as, acidity and agitation were kept constant. The data were adjusted to Langmuir equation in order to calculate the maximum loading capacity (q{sub max}) of the resins, the distribution coefficient (K{sub d}) for Zr and Hf and the separation factor (α{sub Hf}{sup Zr} ). The results of maximum loading capacity (q{sub max}) for Zr and Hf, in mmol g{sup -}1, showed that the most suitable resins for columns experiments are: Dowex 50WX4 50 (q{sub max} Z{sub r} = 2.21, Hf = 0.18), Dowex 50WX8 50 (q{sub max} Zr = 1.89, Hf = 0.13) and Amberlite (q{sub max} Zr = 1.64, Hf = 0.12). However, separations factors, α{sub Hf}{sup Zr}, showed that the resins are not selective. (author)

On the stabilization of niobium(V) solutions by zirconium(IV) and hafnium(IV)

DEFF Research Database (Denmark)

Sørensen, E.; Bjerre, A.B.

1992-01-01

Niobium cannot be separated from zirconium or hafnium when these elements occur together in solution with common anions such as chloride and sulphate. This is ascribed to the co-polymerization of niobium(V) and the hydrolysed ionic species of zirconium(IV) and hafnium(IV) to form colloidal...

Mechanoactivation of chromium silicide formation in the SiC-Cr-Si system

Directory of Open Access Journals (Sweden)

Vlasova M.

2002-01-01

Full Text Available The processes of simultaneous grinding of the components of a SiC-Cr-Si mixture and further temperature treatment in the temperature range 1073-1793 K were studied by X-ray phase analysis, IR spectroscopy, electron microscopy, and X-ray microanalysis. It was established that, during grinding of the mixture, chromium silicides form. A temperature treatment completes the process. Silicide formation proceeds within the framework of the diffusion of silicon into chromium. In the presence of SiO2 in the mixture, silicide formation occurs also as a result of the reduction of silica by silicon and silicon carbide. The sintering of synthesized composite SiC-chromium silicides powders at a high temperature under a high pressure (T = 2073 K, P = 5 GPa is accompanied by the destruction of cc-SiC particles, the cc/3 transition in silicon carbide and deformation distortions of the lattices of chromium silicides.

Thermoelectric characteristics of Pt-silicide/silicon multi-layer structured p-type silicon

International Nuclear Information System (INIS)

Choi, Wonchul; Jun, Dongseok; Kim, Soojung; Shin, Mincheol; Jang, Moongyu

2015-01-01

Electric and thermoelectric properties of silicide/silicon multi-layer structured devices were investigated with the variation of silicide/silicon heterojunction numbers from 3 to 12 layers. For the fabrication of silicide/silicon multi-layered structure, platinum and silicon layers are repeatedly sputtered on the (100) silicon bulk substrate and rapid thermal annealing is carried out for the silicidation. The manufactured devices show ohmic current–voltage (I–V) characteristics. The Seebeck coefficient of bulk Si is evaluated as 195.8 ± 15.3 μV/K at 300 K, whereas the 12 layered silicide/silicon multi-layer structured device is evaluated as 201.8 ± 9.1 μV/K. As the temperature increases to 400 K, the Seebeck coefficient increases to 237.2 ± 4.7 μV/K and 277.0 ± 1.1 μV/K for bulk and 12 layered devices, respectively. The increase of Seebeck coefficient in multi-layered structure is mainly attributed to the electron filtering effect due to the Schottky barrier at Pt-silicide/silicon interface. At 400 K, the thermal conductivity is reduced by about half of magnitude compared to bulk in multi-layered device which shows the efficient suppression of phonon propagation by using Pt-silicide/silicon hetero-junctions. - Highlights: • Silicide/silicon multi-layer structured is proposed for thermoelectric devices. • Electric and thermoelectric properties with the number of layer are investigated. • An increase of Seebeck coefficient is mainly attributed the Schottky barrier. • Phonon propagation is suppressed with the existence of Schottky barrier. • Thermal conductivity is reduced due to the suppression of phonon propagation

Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

Energy Technology Data Exchange (ETDEWEB)

Ozcan, Ahmet S., E-mail: asozcan@us.ibm.com [IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States); Lavoie, Christian; Jordan-Sweet, Jean [IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598 (United States); Alptekin, Emre; Zhu, Frank [IBM Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, New York 12533 (United States); Leith, Allen; Pfeifer, Brian D.; LaRose, J. D.; Russell, N. M. [TEL Epion Inc., 900 Middlesex Turnpike, Bldg. 6, Billerica, Massachusetts 01821 (United States)

2016-04-21

We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.

NMOS contact resistance reduction with selenium implant into NiPt silicide

Science.gov (United States)

Rao, K. V.; Khaja, F. A.; Ni, C. N.; Muthukrishnan, S.; Darlark, A.; Lei, J.; Peidous, I.; Brand, A.; Henry, T.; Variam, N.; Erokhin, Y.

2012-11-01

A 25% reduction in NMOS contact resistance (Rc) was achieved by Selenium implantation into NiPt silicide film in VIISta Trident high-current single-wafer implanter. The Trident implanter is designed for shallow high-dose implants with high beam currents to maintain high throughput (for low CoO), with improved micro-uniformity and no energy contamination. The integration of Se implant was realized using a test chip dedicated to investigating silicide/junction related electrical properties and testable after silicidation. The silicide module processes were optimized, including the pre-clean (prior to RF PVD NiPt dep) and pre- and post-implant anneals. A 270°C soak anneal was used for RTP1, whereas a msec laser anneal was employed for RTP2 with sufficient process window (800-850°C), while maintaining excellent junction characteristics without Rs degradation.

Analysis of hafnium in zirconium alloys

International Nuclear Information System (INIS)

Kondo, Isao; Sakai, Fumiaki; Ohuchi, Yoshifusa; Nakamura, Hisashi

1977-01-01

It is required to analyse alloying components and impurity elements in the acceptance analysis of zirconium alloys as the material for fuel cladding tubes and pressure tubes for advanced thermal reactors. Because of extreme similarity in chemical properties between zirconium and hafnium, about 100 ppm of hafnium is usually contained in zirconium alloys. Zircaloy-2 alloy and 2.5% Nb-zirconium with the addition of hafnium had been prepared as in-house standard samples for rapid analysis. Study was made on fluorescent X-ray analysis and emission spectral analysis to establish the analytical method. By using these in-house standard samples, acceptance analysis was successfully carried out for the fuel cladding tubes for advanced thermal reactors. Sulfuric acid solution was prepared from JAERI-Z 1, 2 and 3, the standard sample for zircaloy-2 prepared by the Analytical Committee on Nuclear Fuel and Reactor Materials, JAERI, and zirconium oxide (Hf 1 ppm/Zr). Standard Hf solution was added to the sulfuric acid solution step by step, to make up a series of the standard oxide samples by the precipitation process. By the use of these standard samples, the development of the analytical method and joint analysis were made by the three-member analytical technique research group including PNC. The analytical precision for the fluorescent X-ray analysis was improved by attaching a metallic yttrium filter to the window of an X-ray tube so as to suppress the effect due to zirconium matrix. The variation factor of the joint analysis was about 10% to show good agreement, and the indication value was determined. (Kobatake, H.)

Technology CAD of silicided Schottky barrier MOSFET for elevated source-drain engineering

International Nuclear Information System (INIS)

Saha, A.R.; Chattopadhyay, S.; Bose, C.; Maiti, C.K.

2005-01-01

Technology CAD has been used to study the performance of a silicided Schottky barrier (SB) MOSFET with gate, source and drain contacts realized with nickel-silicide. Elevated source-drain structures have been used towards the S/D engineering of CMOS devices. A full process-to-device simulation has been employed to predict the performance of sub-micron SB n-MOSFETs for the first time. A model for the diffusion and alloy growth kinetics has been incorporated in SILVACO-ATLAS and ATHENA to explore the processing and design parameter space for the Ni-silicided MOSFETs. The temperature and concentration dependent diffusion model for NiSi have been developed and necessary material parameters for nickel-silicide and epitaxial-Si have been incorporated through the C-interpreter function. Two-dimensional (2D) process-to-device simulations have also been used to study the dc and ac (RF) performance of silicided Schottky barrier (SB) n-MOSFETs. The extracted sheet resistivity, as a function of annealing temperature of the silicided S/D contacts, is found to be lower than the conventional contacts currently in use. It is also shown that the Technology CAD has the full capability to predict the possible dc and ac performance enhancement of a MOSFET with elevated S/D structures. While the simulated dc performance shows a clear enhancement, the RF analyses show no performance degradation in the cut-off frequency/propagation delay and also improve the ac performance due to the incorporation of silicide contacts in the S/D region

Technology CAD of silicided Schottky barrier MOSFET for elevated source-drain engineering

Energy Technology Data Exchange (ETDEWEB)

Saha, A.R. [Department of Electronics and ECE, IIT, Kharagpur 721302 (India)]. E-mail: ars.iitkgp@gmail.com; Chattopadhyay, S. [Department of Electronics and ECE, IIT, Kharagpur 721302 (India); School of Electrical, Electronics and Computer Engineering, University of Newcastle, Newcastle upon Tyne (United Kingdom); Bose, C. [Department of Electronics and Telecommunication Engineering, Jadavpur University, Calcutta 700032 (India); Maiti, C.K. [Department of Electronics and ECE, IIT, Kharagpur 721302 (India)

2005-12-05

Technology CAD has been used to study the performance of a silicided Schottky barrier (SB) MOSFET with gate, source and drain contacts realized with nickel-silicide. Elevated source-drain structures have been used towards the S/D engineering of CMOS devices. A full process-to-device simulation has been employed to predict the performance of sub-micron SB n-MOSFETs for the first time. A model for the diffusion and alloy growth kinetics has been incorporated in SILVACO-ATLAS and ATHENA to explore the processing and design parameter space for the Ni-silicided MOSFETs. The temperature and concentration dependent diffusion model for NiSi have been developed and necessary material parameters for nickel-silicide and epitaxial-Si have been incorporated through the C-interpreter function. Two-dimensional (2D) process-to-device simulations have also been used to study the dc and ac (RF) performance of silicided Schottky barrier (SB) n-MOSFETs. The extracted sheet resistivity, as a function of annealing temperature of the silicided S/D contacts, is found to be lower than the conventional contacts currently in use. It is also shown that the Technology CAD has the full capability to predict the possible dc and ac performance enhancement of a MOSFET with elevated S/D structures. While the simulated dc performance shows a clear enhancement, the RF analyses show no performance degradation in the cut-off frequency/propagation delay and also improve the ac performance due to the incorporation of silicide contacts in the S/D region.

Structural and electronic properties of rare-earth silicide thin films at Si(111)

Energy Technology Data Exchange (ETDEWEB)

Dues, Christof; Schmidt, Wolf Gero; Sanna, Simone [Lehrstuhl fuer Theoretische Physik, Universitaet Paderborn (Germany)

2016-07-01

Rare-earth (RE) silicides thin films on silicon surfaces are currently of high interest. They grow nearly defect-free because of the small lattice mismatch, and exhibit very low Schottky-barriers on n-type silicon. They even give rise to the self-organized formation of RE silicide nanowires on the Si(001) and vicinal surfaces. Depending on the amount of deposited RE atoms, a plethora of reconstructions are observed for the RE silicide. While one monolayer leads to the formation of a 1 x 1-reconstruction, several monolayer thick silicides crystallize in a √(3) x √(3) R30 {sup circle} superstructure. Submonolayer RE deposition leads to different periodicities. In this work we investigate the formation of RE silicides thin films on Si(111) within the density functional theory. The energetically favored adsorption site for RE adatoms is determined calculating the potential energy surface. As prototypical RE, Dysprosium is used. Additional calculations are performed for silicides formed by different RE elements. We calculate structural properties, electronic band structures and compare measured and simulated STM images. We consider different terminations for the 5 x 2 reconstruction occurring in the submonolayer regime and investigate their stability by means of ab initio thermodynamics. The same method is employed to predict the stable silicide structure as a function of the deposited RE atoms.

Silicide/Silicon Heterointerfaces, Reaction Kinetics and Ultra-short Channel Devices

Science.gov (United States)

Tang, Wei

Nickel silicide is one of the electrical contact materials widely used on very large scale integration (VLSI) of Si devices in microelectronic industry. This is because the silicide/silicon interface can be formed in a highly controlled manner to ensure reproducibility of optimal structural and electrical properties of the metal-Si contacts. These advantages can be inherited to Si nanowire (NW) field-effect transistors (FET) device. Due to the technological importance of nickel silicides, fundamental materials science of nickel silicides formation (Ni-Si reaction), especially in nanoscale, has raised wide interest and stimulate new insights and understandings. In this dissertation, in-situ transmission electron microscopy (TEM) in combination with FET device characterization will be demonstrated as useful tools in nano-device fabrication as well as in gaining insights into the process of nickel silicide formation. The shortest transistor channel length (17 nm) fabricated on a vapor-liquid-solid (VLS) grown silicon nanowire (NW) has been demonstrated by controlled reaction with Ni leads on an in-situ transmission electron microscope (TEM) heating stage at a moderate temperature of 400 ºC. NiSi2 is the leading phase, and the silicide-silicon interface is an atomically sharp type-A interface. At such channel lengths, high maximum on-currents of 890 (microA/microm) and a maximum transconductance of 430 (microS/microm) were obtained, which pushes forward the performance of bottom-up Si NW Schottky barrier field-effect transistors (SB-FETs). Through accurate control over the silicidation reaction, we provide a systematic study of channel length dependent carrier transport in a large number of SB-FETs with channel lengths in the range of (17 nm -- 3.6 microm). Our device results corroborate with our transport simulations and reveal a characteristic type of short channel effects in SB-FETs, both in on- and off-state, which is different from that in conventional MOSFETs

Neutronic Analysis and Radiological Safety of RSG-GAS Reactor on 300 Grams Uranium Silicide Core

International Nuclear Information System (INIS)

Pande Made Udiyani; Lily Suparlina; Rokhmadi

2007-01-01

As starting of usage silicide U 250 g fuel element in the core of RSG-GAS and will be continued with usage of silicide U 300 g fuel element, hence done beforehand neutronic analyse and radiological safety of RSG-GAS. Calculation done by ORIGEN2.1 code to calculate source term, and also by PC-COSYMA code to calculate radiological safety of radioactive dispersion from RSG-GAS. Calculation of radioactive dispersion done at condition of reactor is postulated be happened an accident of LOCA causing one fuel element to melt. Neutronic analysis indicate that silicide U 250 g full core shall to be operated beforehand during 625 MWD before converted to silicide U 300 g core. During operation of transition core with mixture of silicide U 250 g and 300 g, all parameter fulfill criterion of safety Designed Balance core of silicide U 300 g will be reached at the time of fifth full core. Result of calculation indicate that through mixture core of silicide U 250 and 300 g proposed can form silicide U 300 g balance core of reactor RSG-GAS safely. Calculation of radiology safety by deterministic for silicide U 300 g balance core, and accident postulation which is equal to core of silicide U 250 g yield output in the form of radiation activity (radionuclide concentration in the air and deposition on the ground), radiation dose (collective and individual), radiation effect (short- and long-range), which accepted by society in each perceived sector. Result of calculation indicated that dose accepted by society is not pass permitted boundary for public society if happened accident. (author)

Knight shift in scandium and its alloys with hafnium and titanium

International Nuclear Information System (INIS)

Chachkhiani, Z.B.; Chechernikov, V.I.; Martynova, L.F.; Nidel'ko, V.I.; Chachkhiani, L.G.; Georgadze, G.S.

1981-01-01

Results of the investigation of NMR on 45 Sc nuclei and magnetic susceptibility of scandium and its solid solutions with titanium and hafnium are presented. It is shown that the existing hybridization of S and d zones in pure scandium and its alloys with titanium and hafnium affects the Knight shift reducing the value of the contact contribution. The temperature behaviour of the Knight shift from the temperature dependence and spin susceptibility of collectivized d electrons [ru

Composition and microstructure of zirconium and hafnium germanates obtained by different chemical routes

International Nuclear Information System (INIS)

Utkin, A.V.; Prokip, V.E.; Baklanova, N.I.

2014-01-01

The phase composition and morphology of zirconium and hafnium germanates synthesized by ceramic and co-precipitation routes were studied. The products were characterized using high-temperature X-ray diffraction analysis (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and thermal (TG/DTA) analysis. To investigate the phase composition and stoichiometry of compounds the unit cell parameters were refined by full-profile Rietveld XRD analysis. The morphology of products and its evolution during high-temperature treatment was examined by SEM analysis. It was stated that there is the strong dependence of the phase composition and morphology of products on the preparation route. The ceramic route requires a multi-stage high-temperature treatment to obtain zirconium and hafnium germanates of 95% purity or more. Also, there are strong diffusion limitations to obtain hafnium germanate Hf 3 GeO 8 by ceramic route. On the contrary, the co-precipitation route leads to the formation of nanocrystalline single phase germanates of stoichiometric composition at a relatively low temperatures (less than 1000 °C). The results of quantitative XRD analysis showed the hafnium germanates are stoichiometric compounds in contrast to zirconium germanates that form a set of solid solutions. This distinction may be related to the difference in the ion radii of Zr and Hf. - Graphical abstract: The phase composition and morphology of zirconium and hafnium germanates synthesized by ceramic and co-precipitation routes were studied. It was stated that there is the strong dependence of the phase composition and morphology of products on the preparation route. Display Omitted - Highlights: • Zr and Hf germanates were synthesized by ceramic and co-precipitation routes. • The morphology of products depends on the synthesis parameters. • Zirconium germanates forms a set of solid solutions. • Hafnium germanates are stoichiometric compounds

Silicide Schottky Contacts to Silicon: Screened Pinning at Defect Levels

Energy Technology Data Exchange (ETDEWEB)

Drummond, T.J.

1999-03-11

Silicide Schottky contacts can be as large as 0.955 eV (E{sub v} + 0.165 eV) on n-type silicon and as large as 1.05 eV (E{sub c} {minus} 0.07 eV) on p-type silicon. Current models of Schottky barrier formation do not provide a satisfactory explanation of occurrence of this wide variation. A model for understanding Schottky contacts via screened pinning at defect levels is presented. In the present paper it is shown that most transition metal silicides are pinned approximately 0.48 eV above the valence band by interstitial Si clusters. Rare earth disilicides pin close to the divacancy acceptor level 0.41 eV below the conduction band edge while high work function silicides of Ir and Pt pin close to the divacancy donor level 0.21 eV above the valence band edge. Selection of a particular defect pinning level depends strongly on the relative positions of the silicide work function and the defect energy level on an absolute energy scale.

Recovery of hafnium radioisotopes from a proton irradiated tantalum target

International Nuclear Information System (INIS)

Taylor, W.A.; Garcia, J.G.; Hamilton, V.T.; Heaton, R.C.; Jamriska, D.J.; Ott, M.A.; Philips, D.R.; Radzinski, S.D.

1998-01-01

The 178m2 Hf nucleus, with its long half-life (31 y) and high-spin isomeric state (16 + ) is desired for new and exotic nuclear physics studies. The Los Alamos Radioisotope Program irradiated a kilogram of natural tantalum at the Los Alamos Meson Physics Facility in early 1981. After fifteen years of decay, this target was ideal for the recovery of 178m2 Hf. There was more than a millicurie of 178m2 Hf produced during this irradiation and there has been a sufficient period of time for most of the other hafnium radioisotopes to decayed away. Traditionally, separation techniques for recovering hafnium isotopes from tantalum targets employ solvent extractions with reagents that are considered hazardous. These techniques are no longer condoned because they generate a mixed-waste (radioactive and hazardous components) that can not be treated for disposal. In this paper we describe a new and unique procedure for the recovery of hafnium radioisotopes from a highly radioactive, proton irradiated, tantalum target using reagents that do not contribute a hazardous waste component. (author)

Kinetics of nickel silicide growth in silicon nanowires: From linear to square root growth

International Nuclear Information System (INIS)

Yaish, Y. E.; Beregovsky, M.; Katsman, A.; Cohen, G. M.

2011-01-01

The common practice for nickel silicide formation in silicon nanowires (SiNWs) relies on axial growth of silicide along the wire that is initiated from nickel reservoirs at the source and drain contacts. In the present work the silicide intrusions were studied for various parameters including wire diameter (25-50 nm), annealing time (15-120 s), annealing temperature (300-440 deg. C), and the quality of the initial Ni/Si interface. The silicide formation was investigated by high-resolution scanning electron microscopy, high-resolution transmission electron microscopy (TEM), and atomic force microscopy. The main part of the intrusion formed at 420 deg. C consists of monosilicide NiSi, as was confirmed by energy dispersive spectroscopy STEM, selected area diffraction TEM, and electrical resistance measurements of fully silicided SiNWs. The kinetics of nickel silicide axial growth in the SiNWs was analyzed in the framework of a diffusion model through constrictions. The model calculates the time dependence of the intrusion length, L, and predicts crossover from linear to square root time dependency for different wire parameters, as confirmed by the experimental data.

Evaluation of the oxide and silicide fuels reactivity in the RSG-GAS core

International Nuclear Information System (INIS)

S, Tukiran; M S, Tagor; S, Lily; Pinem, S.

2000-01-01

Fuel exchange of The RSG-GAS reactor core from uranium oxide to uranium silicide in the same loading, density, and enrichment, that is, 250 gr, 2.98 gr/cm 3 , and 19.75 % respectively, will be performed in-step wise. In every cycle of exchange with 5/l mode, it is needed to evaluate the parameter of reactor core operation. One of the important operation parameters is fuel reactivity that gives effect to the core reactivity. The experiment was performed at core no. 36, BOC, low power which exist 2 silicide fuels. The evaluation was done based on the RSG-GAS control rod calibration consisting of 40 fuels and 8 control rod.s. From 40 fuels in the core, there are 2 silicide fuels, RI-225/A-9 and RI-224/C-3. For inserting 2 silicide fuels, the reactivity effect to the core must be know. To know this effect , it was performed fuels reactivity experiment, which based on control rod calibration. But in this case the RSG-GAS has no other fresh oxide fuel so that configuration of the RSG-GAS core was rearranged by taking out the both silicide fuels and this configuration is used as reference core. Then silicide fuel RI-224 was inserted to position F-3 replacing the fresh oxide fuel RI-260 so the different reactivity of the fuels is obtained. The experiment result showed that the fuel reactivity change is in amount of 12.85 cent (0.098 % ) The experiment result was compared to the calculation result, using IAFUEL code which amount to 13.49 cent (0.103 %) The result showed that the reactivity change of oxide to silicide fuel is small so that the fuel exchange from uranium oxide to uranium silicide in the first step can be done without any significant change of the operation parameter

Neutronic design of mixed oxide-silicide cores for the core conversion of rsg-gas reactor

International Nuclear Information System (INIS)

Sembiring, Tagor Malem; Tukiran; Pinem surian; Febrianto

2001-01-01

The core conversion of rsg-gas reactor from an all-oxide (U 3 O 8 -Al) core, through a series of mixed oxide-silicide core, to an all-silicide (U 3 Si 2 -Al) core for the same meat density of 2.96 g U/cc is in progress. The conversion is first step of the step-wise conversion and will be followed by the second step that is the core conversion from low meat density of silicide core, through a series of mixed lower-higher density of silicide core, to an all-higher meat density of 3.55 g/cc core. Therefore, the objectives of this work is to design the mixed cores on the neutronic performance to achieve safety a first full-silicide core for the reactor with the low uranium meat density of 2.96gU/cc. The neutronic design of the mixed cores was performed by means of Batan-EQUIL-2D and Batan-3DIFF computer codes for 2 and 3 dimension diffusion calculation, respectively. The result shows that all mixed oxide-silicide cores will be feasible to achieve safety a fist full-silicide core. The core performs the same neutronic core parameters as those of the equilibrium silicide core. Therefore, the reactor availability and utilization during the core conversion is not changed

Influence of IR-laser irradiation on α-SiC-chromium silicides ceramics

International Nuclear Information System (INIS)

Vlasova, M.; Marquez Aguilar, P.A.; Resendiz-Gonzalez, M.C.; Kakazey, M.; Bykov, A.; Gonzalez Morales, I.

2005-01-01

This project investigated the influence of IR-laser irradiation (λ = 1064 nm, P = 240 mW) on composite ceramics SiC-chromium silicides (CrSi 2 , CrSi, Cr 5 Si 3 ) by methods of X-ray diffraction, electron microscopy, atomic force microscopy, and X-ray microanalysis. Samples were irradiated in air. It was established that a surface temperature of 1990 K was required to melt chromium silicides, evaporate silicon from SiC, oxidize chromium silicides, and enrich superficial layer by carbon and chromium oxide

Prediction of barrier inhomogeneities and carrier transport in Ni-silicided Schottky diode

International Nuclear Information System (INIS)

Saha, A.R.; Dimitriu, C.B.; Horsfall, A.B.; Chattopadhyay, S.; Wright, N.G.; O'Neill, A.G.; Maiti, C.K.

2006-01-01

Based on Quantum Mechanical (QM) carrier transport and the effects of interface states, a theoretical model has been developed to predict the anomalous current-voltage (I-V) characteristics of a non-ideal Ni-silicided Schottky diode at low temperatures. Physical parameters such as barrier height, ideality factor, series resistance and effective Richardson constant of a silicided Schottky diode were extracted from forward I-V characteristics and are subsequently used for the simulation of both forward and reverse I-V characteristics using a QM transport model in which the effects of interface state and bias dependent barrier reduction are incorporated. The present analysis indicates that the effects of barrier inhomogeneity caused by incomplete silicide formation at the junction and the interface states may change the conventional current transport process, leading to anomalous forward and reverse I-V characteristics for the Ni-silicided Schottky diode

Comparison of HfCl4, HfI4, TEMA-Hf, and TDMA-Hf as precursors in early growing stages of HfO2 films deposited by ALD: A DFT study

International Nuclear Information System (INIS)

Cortez-Valadez, M.; Fierro, C.; Farias-Mancilla, J.R.; Vargas-Ortiz, A.; Flores-Acosta, M.; Ramírez-Bon, R.; Enriquez-Carrejo, J.L.

2016-01-01

Highlights: • Hafnium oxide growth on Si(100) by atomic layer deposition was simulated. • The interface structure was considered as silicate and silicide. • The interface was studied employing DFT. • TDMA-Hf precursor show better interface stability. - Abstract: The final structure of HfO 2 films grown by atomic layer deposition (ALD) after reaction with OH − ions has been analyzed by DFT (density functional theory). The interaction of the precursors: HfCl 4 (hafnium tetrachloride), HfI 4 (hafnium tetraiodide), TEMA-Hf (tetrakis-ethylmethylamino hafnium), and TDMA-Hf (tetrakis-dimethylamino hafnium) with HO–H was studied employing the B3LYP (Becke 3-parameter, Lee–Yang–Parr) hybrid functional and the PBE (Perdew–Burke–Ernzerhof) generalized gradient functional. The structural evolution at the Si(100) surface has been analyzed by LDA (local density approximation). The structural parameters: bond length and bond angle, and the vibrational parameters for the optimized structures are also reported. The presence of hafnium silicate at the interface was detected. The infrared spectra and structural parameters obtained in this work agree with previously reported experimental results.

Analysis Of Core Management For The Transition Cores Of RSG-GAS Reactor To Full-Silicide Core

International Nuclear Information System (INIS)

Malem Sembiring, Tagor; Suparlina, Lily; Tukiran

2001-01-01

The core conversion of RSG-GAS reactor from oxide to silicide core with meat density of 2.96 g U/cc is still doing. At the end of 2000, the reactor has been operated for 3 transition cores which is the mixed core of oxide-silicide. Based on previous work, the calculated core parameter for the cores were obtained and it is needed 10 transition cores to achieve a full-silicide core. The objective of this work is to acquire the effect of the increment of the number of silicide fuel on the core parameters such as excess reactivity and shutdown margin. The measurement of the core parameters was carried out using the method of compensation of couple control rods. The experiment shows that the excess reactivity trends lower with the increment of the number of silicide fuel in the core. However, the shutdown margin is not change with the increment of the number of silicide fuel. Therefore, the transition cores can be operated safety to a full-silicide core

Far-infrared spectroscopy of thermally annealed tungsten silicide films

International Nuclear Information System (INIS)

Amiotti, M.; Borghesi, A.; Guizzetti, G.; Nava, F.; Santoro, G.

1991-01-01

The far-infrared transmittance spectrum of tungsten silicide has been observed for the first time. WSi 2 polycrystalline films were prepared by coevaporation and chemical-vapour deposition on silicon wafers, and subsequently thermally annealed at different temperatures. The observed structures are interpreted, on the basis of the symmetry properties of the crystal, such as infrared-active vibrational modes. Moreover, the marked lineshape dependence on annealing temperature enables this technique to analyse the formation of the solid silicide phases

Texture in thin film silicides and germanides: A review

International Nuclear Information System (INIS)

De Schutter, B.; De Keyser, K.; Detavernier, C.; Lavoie, C.

2016-01-01

Silicides and germanides are compounds consisting of a metal and silicon or germanium. In the microelectronics industry, silicides are the material of choice for contacting silicon based devices (over the years, CoSi_2, C54-TiSi_2, and NiSi have been adopted), while germanides are considered as a top candidate for contacting future germanium based electronics. Since also strain engineering through the use of Si_1_−_xGe_x in the source/drain/gate regions of MOSFET devices is an important technique for improving device characteristics in modern Si-based microelectronics industry, a profound understanding of the formation of silicide/germanide contacts to silicon and germanium is of utmost importance. The crystallographic texture of these films, which is defined as the statistical distribution of the orientation of the grains in the film, has been the subject of scientific studies since the 1970s. Different types of texture like epitaxy, axiotaxy, fiber, or combinations thereof have been observed in such films. In recent years, it has become increasingly clear that film texture can have a profound influence on the formation and stability of silicide/germanide contacts, as it controls the type and orientation of grain boundaries (affecting diffusion and agglomeration) and the interface energy (affecting nucleation during the solid-state reaction). Furthermore, the texture also has an impact on the electrical characteristics of the contact, as the orientation and size of individual grains influences functional properties such as contact resistance and sheet resistance and will induce local variations in strain and Schottky barrier height. This review aims to give a comprehensive overview of the scientific work that has been published in the field of texture studies on thin film silicide/germanide contacts.

Texture in thin film silicides and germanides: A review

Science.gov (United States)

De Schutter, B.; De Keyser, K.; Lavoie, C.; Detavernier, C.

2016-09-01

Silicides and germanides are compounds consisting of a metal and silicon or germanium. In the microelectronics industry, silicides are the material of choice for contacting silicon based devices (over the years, CoSi2, C54-TiSi2, and NiSi have been adopted), while germanides are considered as a top candidate for contacting future germanium based electronics. Since also strain engineering through the use of Si1-xGex in the source/drain/gate regions of MOSFET devices is an important technique for improving device characteristics in modern Si-based microelectronics industry, a profound understanding of the formation of silicide/germanide contacts to silicon and germanium is of utmost importance. The crystallographic texture of these films, which is defined as the statistical distribution of the orientation of the grains in the film, has been the subject of scientific studies since the 1970s. Different types of texture like epitaxy, axiotaxy, fiber, or combinations thereof have been observed in such films. In recent years, it has become increasingly clear that film texture can have a profound influence on the formation and stability of silicide/germanide contacts, as it controls the type and orientation of grain boundaries (affecting diffusion and agglomeration) and the interface energy (affecting nucleation during the solid-state reaction). Furthermore, the texture also has an impact on the electrical characteristics of the contact, as the orientation and size of individual grains influences functional properties such as contact resistance and sheet resistance and will induce local variations in strain and Schottky barrier height. This review aims to give a comprehensive overview of the scientific work that has been published in the field of texture studies on thin film silicide/germanide contacts.

Texture in thin film silicides and germanides: A review

Energy Technology Data Exchange (ETDEWEB)

De Schutter, B., E-mail: bob.deschutter@ugent.be; De Keyser, K.; Detavernier, C. [Department of Solid State Sciences, Ghent University, Ghent (Belgium); Lavoie, C. [IBM Research Division, T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (United States)

2016-09-15

Silicides and germanides are compounds consisting of a metal and silicon or germanium. In the microelectronics industry, silicides are the material of choice for contacting silicon based devices (over the years, CoSi{sub 2}, C54-TiSi{sub 2}, and NiSi have been adopted), while germanides are considered as a top candidate for contacting future germanium based electronics. Since also strain engineering through the use of Si{sub 1−x}Ge{sub x} in the source/drain/gate regions of MOSFET devices is an important technique for improving device characteristics in modern Si-based microelectronics industry, a profound understanding of the formation of silicide/germanide contacts to silicon and germanium is of utmost importance. The crystallographic texture of these films, which is defined as the statistical distribution of the orientation of the grains in the film, has been the subject of scientific studies since the 1970s. Different types of texture like epitaxy, axiotaxy, fiber, or combinations thereof have been observed in such films. In recent years, it has become increasingly clear that film texture can have a profound influence on the formation and stability of silicide/germanide contacts, as it controls the type and orientation of grain boundaries (affecting diffusion and agglomeration) and the interface energy (affecting nucleation during the solid-state reaction). Furthermore, the texture also has an impact on the electrical characteristics of the contact, as the orientation and size of individual grains influences functional properties such as contact resistance and sheet resistance and will induce local variations in strain and Schottky barrier height. This review aims to give a comprehensive overview of the scientific work that has been published in the field of texture studies on thin film silicide/germanide contacts.

Development of Silicide Coating on Molybdenum Alloy Cladding

International Nuclear Information System (INIS)

Lim, Woojin; Ryu, Ho Jin

2015-01-01

The molybdenum alloy is considered as one of the accident tolerant fuel (ATF) cladding materials due to its high temperature mechanical properties. However, molybdenum has a weak oxidation resistance at elevated temperatures. To modify the oxidation resistance of molybdenum cladding, silicide coating on the cladding is considered. Molybdenum silicide layers are oxidized to SiO 2 in an oxidation atmosphere. The SiO 2 protective layer isolates the substrate from the oxidizing atmosphere. Pack cementation deposition technique is widely adopted for silicide coating for molybdenum alloys due to its simple procedure, homogeneous coating quality and chemical compatibility. In this study, the pack cementation method was conducted to develop molybdenum silicide layers on molybdenum alloys. It was found that the Mo 3 Si layer was deposited on substrate instead of MoSi 2 because of short holding time. It means that through the extension of holding time, MoSi 2 layer can be formed on molybdenum substrate to enhance the oxidation resistance of molybdenum. The accident tolerant fuel (ATF) concept is to delay the process following an accident by reducing the oxidation rate at high temperatures and to delay swelling and rupture of fuel claddings. The current research for Atf can be categorized into three groups: First, modification of existing zirconium-based alloy cladding by improving the high temperature oxidation resistance and strength. Second, replacing Zirconium based alloys with alternative metallic materials such as refractory elements with high temperature oxidation resistance and strength. Third, designing alternative fuel structures using ceramic and composite systems

Oxidation behavior of molybdenum silicides and their composites

International Nuclear Information System (INIS)

Natesan, K.; Deevi, S. C.

2000-01-01

A key materials issue associated with the future of high-temperature structural silicides is the resistance of these materials to oxidation at low temperatures. Oxidation tests were conducted on Mo-based silicides over a wide temperature range to evaluate the effects of alloy composition and temperature on the protective scaling characteristics and testing regime for the materials. The study included Mo 5 Si 3 alloys that contained several concentrations of B. In addition, oxidation characteristics of MoSi 2 -Si 3 N 4 composites that contained 20--80 vol.% Si 3 N 4 were evaluated at 500--1,400 C

Investigation of colourless complexes of thorium, hafnium and zirconium

International Nuclear Information System (INIS)

Kiciak, S.; Stefanowicz, T.; Gontarz, H.; Swit, Z.

1980-01-01

The investigations conducted in the Institute of General Chemistry of Poznan Technical University in partial cooperation with Kharkhof Technical University related with thorium, hafnium and zirconium complexes are reviewed. (author)

Microstructure and mechanical properties of metal/oxide and metal/silicide interfaces

International Nuclear Information System (INIS)

Shaw, L.; Miracle, D.; Abbaschian, R.

1995-01-01

Fracture energies of Al 2 O 3 /Nb interfaces and MoSi 2 /Nb interfaces with and without Al 2 O 3 coating were measured using sandwich-type chevron-notched specimens. The relations between the mechanical properties, microstructures, types of bonds at the interface and processing routes were explored. The fracture energy of the Al 2 O 3 /Nb interface was determined to be 9 J/m 2 and changed to 16 J/m 2 when Nb was pre-oxidized before the formation of the Al 2 O 3 /Nb interface. The fracture energy of the MoSi 2 /Nb interface could not be determined directly because of the formation of the interfacial compounds. However, the fracture energy at the MoSi 2 /Nb interfacial region was found to depend on the interfacial bond strength, roughness of interfaces and microstructure of interfacial compounds. The interfacial fracture energies of Al 2 O 3 with silicides, MoSi 2 , Nb 5 Si 3 , or (Nb, Mo)Si 2 were estimated to be about 16 J/m 2 , while the interfacial fracture energies between two silicides or between Nb and a silicide were larger than 34 J/m 2 . The measured fracture energies between two silicides or between Nb and a silicide were larger than 34 J/m 2 . The measured fracture energies of the various interfaces are discussed in terms of the interfacial microstructures and types of bonds at the interfaces

Evaluation of In-Core Fuel Management for the Transition Cores of RSG-GAS Reactor to Full-Silicide Core

International Nuclear Information System (INIS)

S, Tukiran; MS, Tagor; P, Surian

2003-01-01

The core conversion of RSG-GAS reactor from oxide to silicide core with meat density of 2.96 gU/cc has been done. The core-of RSG-GAS reactor has been operated full core of silicide fuels which is started with the mixed core of oxide-silicide start from core 36. Based on previous work, the calculated core parameter for the cores were obtained and it is needed 9 transition cores (core 36 - 44) to achieve a full-silicide core (core 45). The objective of this work is to acquire the effect of the increment of the number of silicide fuel on the core parameters. Conversion core was achieved by transition cores mixed oxide-silicide fuels. Each transition core is calculated and measured core parameter such as, excess reactivity and shutdown margin. Calculation done by Batan-EQUIL-2D code and measurement of the core parameters was carried out using the method of compensation of couple control rods. The results of calculation and experiment shows that the excess reactivity trends lower with the increment of the number of silicide fuel in the core. However, the shutdown margin is not change with the increment of the number of silicide fuel. Therefore, the transition cores can be operated safely to a full-silicide core

Thermal stability of Ni-Pt-Ta alloy silicides on epi-Si{sub 1-x}C{sub x}

Energy Technology Data Exchange (ETDEWEB)

Yoo, Jung-Ho; Chang, Hyun-Jin [Department of Ceramic Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Min, Byoung-Gi [Department of Ceramic Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Jusung Engineering Co., Ltd., 49, Neungpyeong-ri, Opo-eup, Gwangju-Si, Kyunggi-do 464-892 (Korea, Republic of); Ko, Dae-Hong [Department of Ceramic Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of)], E-mail: dhko@yonsei.ac.kr; Cho, Mann-Ho [Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749 (Korea, Republic of); Sohn, Hyunchul [Department of Ceramic Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Lee, Tae-Wan [Jusung Engineering Co., Ltd., 49, Neungpyeong-ri, Opo-eup, Gwangju-Si, Kyunggi-do 464-892 (Korea, Republic of)

2008-12-05

We investigated the silicide formation in Ni/epi-Si{sub 1-x}C{sub x} systems. Ni-Pt and Ni-Pt-Ta films were deposited on epi-Si{sub 1-x}C{sub x}/Si substrates by DC magnetron sputtering and processed at various temperatures. The sheet resistance of the silicide from the Ni alloy/epi-Si{sub 1-x}C{sub x} systems was maintained at low values compared to that from Ni/Si systems. By TEM and EDS analyses, we confirmed the presence of a Pt alloy layer at the top of the Ni-silicide layer. The stability of the silicide layer in the Ni alloy/epi-Si{sub 1-x}C{sub x} system is explained by not only the Pt rich layer on the top of the Ni-silicide layer, but also by the presence of a small amount of Pt in the Ni-silicide layer or at the grain boundaries. And both the thermal stability and the morphology of silicide were greatly improved by the addition of Ta in Ni-Pt films.

Exploitation of a self-limiting process for reproducible formation of ultrathin Ni1-xPtx silicide films

International Nuclear Information System (INIS)

Zhang Zhen; Zhu Yu; Rossnagel, Steve; Murray, Conal; Jordan-Sweet, Jean; Yang, Bin; Gaudet, Simon; Desjardins, Patrick; Kellock, Andrew J.; Ozcan, Ahmet; Zhang Shili; Lavoie, Christian

2010-01-01

This letter reports on a process scheme to obtain highly reproducible Ni 1-x Pt x silicide films of 3-6 nm thickness formed on a Si(100) substrate. Such ultrathin silicide films are readily attained by sputter deposition of metal films, metal stripping in wet chemicals, and final silicidation by rapid thermal processing. This process sequence warrants an invariant amount of metal intermixed with Si in the substrate surface region independent of the initial metal thickness, thereby leading to a self-limiting formation of ultrathin silicide films. The crystallographic structure, thickness, uniformity, and morphological stability of the final silicide films depend sensitively on the initial Pt fraction.

Separation process of zirconium and hafnium; Procede de separation du zirconium et du hafnium

Energy Technology Data Exchange (ETDEWEB)

Hure, J; Saint-James, R [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

1955-07-01

About the separation different processes of zirconium-hafnium, the extraction by solvent in cross-current is the most easily the process usable on an industrial scale. It uses tributyl phosphate as solvent, diluted with white spirit to facilitate the decanting. Some exploratory tests showed that nitric environment seemed the most favorable for extraction; but a lot of other factors intervene in the separation process. We studied the influence of the acidity successively, the NO{sub 3}{sup -} ions concentration, the role of the cation coming with NO{sub 3}{sup -}, as well as the influence of the concentration of zirconium in the solution on the separation coefficient {beta} = {alpha}{sub Zr} / {alpha}{sub Hf}. (M.B.) [French] Des differents procedes de separation zirconium-hafnium, l'extraction par solvant en contre-courant est le procede le plus facilement utilisable a l'echelle industrielle. On utilise comme solvant le phosphate de tributyle, dilue avec du white spirit pour faciliter les decantations. Des essais preliminaires ont montre que le milieu nitrique semblait le plus favorable a l'extraction; mais beaucoup d'autres facteurs interviennent dans le processus de separation. Nous avons etudie successivement l'influence de l'acidite, celle de la concentration en ions NO{sub 3}{sup -}, le role du cation accompagnant NO{sub 3}{sup -}, ainsi que l'influence de la concentration en zirconium de la solution sur le coefficient de separation {beta} = {alpha}{sub Zr} / {alpha}{sub Hf}. (MB)

Uranium silicide activities at Babcock and Wilcox

International Nuclear Information System (INIS)

Noel, W.W.; Freim, J.B.

1983-01-01

Babcock and Wilcox, Naval Nuclear Fuel Division (NNFD) in conjunction with Argonne National Laboratory (ANL) is actively involved in the Reduced Enrichment Research Test Reactor (RERTR) Program to produce low enriched fuel elements for research reactors. B and W and ANL have undertaken a joint effort in which NNFD will fabricate two low enriched uranium (LEU), Oak Ridge Reactor (ORR) elements with uranium silicide fuel furnished by ANL. These elements are being fabricated for irradiation testing at Oak Ridge National Laboratory (ORNL). Concurrently with this program, NNFD is developing and implementing the uranium silicide and uranium aluminide fuel fabrication technology. NNFD is fabricating the uranium silicide ORR elements in a two-phase program, Development and Production. To summarize: 1. Full size fuel plates can be made with U 3 SiAl but the fabricator must prevent oxidation of the compact prior to hot roll bonding; 2. Providing the ANL U 3 Si x irradiation results are successful, NNFD plans to provide two ORR elements during February 1983; 3. NNFD is developing and implementing U 3 Si x and UAI x fuel fabrication technology to be operational in 1983; 4. NNFD can supply U 3 O 8 high enriched uranium (HEU) or low enriched uranium (LEU) research reactor elements; 5. NNFD is capable of providing high quality, cost competitive LEU or HEU research reactor elements to meet the needs of the customer

Further data of silicide fuel for the LEU conversion of JMTR

International Nuclear Information System (INIS)

Saito, M.; Futamura, Y.; Nakata, H.; Ando, H.; Sakurai, F.; Ooka, N.; Sakakura, A.; Ugajin, M.; Shirai, E.

1990-01-01

Silicide fuel data for the safety assessment of the JMTR LEU fuel conversion are being measured. The data include fission product release, thermal properties, behaviour under accident conditions, and metallurgical characteristics. The methods used in the experiments are discussed. Results of fission products release at high temperature are described. The release of iodine from the silicide fuel is considerably lower than for U-Al alloy fuel

Evaluation Of Oxide And Silicide Mixed Fuels Of The RSG-GAS Core

International Nuclear Information System (INIS)

Tukiran; Sembiring, Tagor Malem; Suparlina, Lily

2000-01-01

Fuel exchange of the RSG-GAS reactor core from uranium oxide to uranium silicide in the same loading, density, and enrichment, that is 250 gr, 2.98 gr/cm 3 , and 19.75%, respectively, will be performed in-step wise. In every cycle of exchange with 5/1 mode, it is needed to evaluate the parameter of reactor core operation. The parameters of the reactor operation observed are criticality mass of fuels, reactivity balance, and fuel reactivity that give effect to the reactor operation. The evaluation was done at beginning of cycle of the first and second transition core with compared between experiment and calculation results. The experiments were performed at transition core I and II, BOC, and low power. At transition core I, there are 2 silicide fuels (RI-224 and R1-225) in the core and then, added five silicide fuels (R1-226, R1-252, R1-263, and R1-264) to the core, so that there are seven silicide fuels in the transition core II. The evaluation was done based on the experiment of criticality, control rod calibration, fuel reactivity of the RSG-GAS transition core. For inserting 2 silicide fuels in the transition core I dan 7 fuels in the transition core II, the operation of RSG-GAS core fulfilled the safety margin and the parameter of reactor operation change is not occur drastically in experiment and calculation results. So that, the reactor was operated during 36 days at 15 MW, 540 MWD at the first transition core. The general result showed that the parameter of reactor operation change is small so that the fuel exchange from uranium oxide to uranium silicide in the next step can be done

Strong influence of polymer architecture on the microstructural evolution of hafnium-alkoxide-modified silazanes upon ceramization.

Science.gov (United States)

Papendorf, Benjamin; Nonnenmacher, Katharina; Ionescu, Emanuel; Kleebe, Hans-Joachim; Riedel, Ralf

2011-04-04

The present study focuses on the synthesis and ceramization of novel hafnium-alkoxide-modified silazanes as well as on their microstructure evolution at high temperatures. The synthesis of hafnia-modified polymer-derived SiCN ceramic nanocomposites is performed via chemical modification of a polysilazane and of a cyclotrisilazane, followed by cross-linking and pyrolysis in argon atmosphere. Spectroscopic investigation (i.e., NMR, FTIR, and Raman) shows that the hafnium alkoxide reacts with the N-H groups of the cyclotrisilazane; in the case of polysilazane, reactions of N-H as well as Si-H groups with the alkoxide are observed. Consequently, scanning and transmission electron microscopy studies reveal that the ceramic nanocomposites obtained from cyclotrisilazane and polysilazane exhibited markedly different microstructures, which is a result of the different reaction pathways of the hafnium alkoxide with cyclotrisilazane and with polysilazane. Furthermore, the two prepared ceramic nanocomposites are unexpectedly found to exhibit extremely different high-temperature behavior with respect to decomposition and crystallization; this essential difference is found to be related to the different distribution of hafnium throughout the ceramic network in the two samples. Thus, the homogeneous distribution of hafnium observed in the polysilazane-derived ceramic leads to an enhanced thermal stability with respect to decomposition, whereas the local enrichment of hafnium within the matrix of the cyclotrisilazane-based sample induces a pronounced decomposition upon annealing at high temperatures. The results indicate that the chemistry and architecture of the precursor has a crucial effect on the microstructure of the resulting ceramic material and consequently on its high-temperature behavior. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Improvement of Silicide Coating Method as Diffusion Barrier for U-Mo Dispersion Fuel

Energy Technology Data Exchange (ETDEWEB)

Nam, Ji Min; Kim, Sunghwan; Lee, Kyu Hong; Park, Jong Man [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2014-10-15

The excessive interaction between the U-Mo alloys and their surrounding Al matrix lead to excessive local swelling called 'pillowing'. For this reason, KAERI suggested several remedies such as alloying U-Mo with Ti, or Al matrix with Si. In addition, silicide or nitride coatings on the surface of U-Mo particles have also been proposed to hinder the growth of the interaction layer. In this study, centrifugally atomized U-Mo-Ti alloy powders were coated with silicide layers. The coating process was improved when compared to the previous coating in terms of the ball milling and heat treatment conditions. Subsequently, silicide coated U-Mo-Ti powders and pure aluminum powders were mixed and made into a compact for the annealing test. The compacts were annealed at 550 .deg. C for 2hr, and characterized using scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDS). 1. Uniform, homogeneous, thickness controllable silicide layers were successfully coated on the surface of U-7wt%Mo-1wt%Ti powders. 2. U{sub 3}Si, U{sub 3}Si{sub 2} silicide layers formed on the surface of U-7wt%Mo-1wt%Ti powders, and were identified by XRD and EDS analyses.

Comparison of HfCl{sub 4}, HfI{sub 4}, TEMA-Hf, and TDMA-Hf as precursors in early growing stages of HfO{sub 2} films deposited by ALD: A DFT study

Energy Technology Data Exchange (ETDEWEB)

Cortez-Valadez, M. [Departamento de Investigación en Física, Universidad de Sonora, Apdo. Postal 5-88, 83190 Hermosillo, Son. (Mexico); Fierro, C.; Farias-Mancilla, J.R. [Instituto de Ingeniería y Tecnología, Departamento de Física y Matemáticas, Universidad Autónoma de Ciudad Juárez, Av. del Charro 450, Cd. Juárez C.P. 32310, Chihuahua (Mexico); Vargas-Ortiz, A. [Universidad Autónoma de Sinaloa, Facultad de Ingeniería Mochis, Ciudad Universitaria, C.P. 81223 Los Mochis, Sinaloa (Mexico); Flores-Acosta, M. [Departamento de Investigación en Física, Universidad de Sonora, Apdo. Postal 5-88, 83190 Hermosillo, Son. (Mexico); Ramírez-Bon, R. [Centro de Investigación y Estudios Avanzados del IPN, Unidad Querétaro, Apdo. Postal 1-798, 76001 Querétaro, Qro. (Mexico); Enriquez-Carrejo, J.L. [Instituto de Ingeniería y Tecnología, Departamento de Física y Matemáticas, Universidad Autónoma de Ciudad Juárez, Av. del Charro 450, Cd. Juárez C.P. 32310, Chihuahua (Mexico); and others

2016-06-15

Highlights: • Hafnium oxide growth on Si(100) by atomic layer deposition was simulated. • The interface structure was considered as silicate and silicide. • The interface was studied employing DFT. • TDMA-Hf precursor show better interface stability. - Abstract: The final structure of HfO{sub 2} films grown by atomic layer deposition (ALD) after reaction with OH{sup −} ions has been analyzed by DFT (density functional theory). The interaction of the precursors: HfCl{sub 4} (hafnium tetrachloride), HfI{sub 4} (hafnium tetraiodide), TEMA-Hf (tetrakis-ethylmethylamino hafnium), and TDMA-Hf (tetrakis-dimethylamino hafnium) with HO–H was studied employing the B3LYP (Becke 3-parameter, Lee–Yang–Parr) hybrid functional and the PBE (Perdew–Burke–Ernzerhof) generalized gradient functional. The structural evolution at the Si(100) surface has been analyzed by LDA (local density approximation). The structural parameters: bond length and bond angle, and the vibrational parameters for the optimized structures are also reported. The presence of hafnium silicate at the interface was detected. The infrared spectra and structural parameters obtained in this work agree with previously reported experimental results.

Separation of hafnium from zirconium in sulfuric acid solutions using pressurized ion exchange

International Nuclear Information System (INIS)

Hurst, F.J.

1981-01-01

High-resolution pressurized ion exchange has been used successfully to study and separate hafnium and zirconium sulfate complexes by chromatographic elution from Dowex 50W-X8 (15 to 25 μm) resin with sulfuric acid solutions. Techniques were developed to continuously monitor the column effluents for zirconium and hafnium by reaction with fluorometric and colorimetric reagents. Since neither reagent was specific for either metal ion, peak patterns were initially identified by using the stable isotopes 90 Zr and 180 Hf as fingerprints of their elution position. Distribution ratios for both zirconium and hafnium decrease as the inverse fourth power of the sulfuric acid concentration below 2N and as the inverse second power at higher acid concentration. The hafnium-to-zirconium separation factor is approximately constant (approx. 8) over the 0.5 to 3N range. Under certain conditions, an unseparated fraction was observed that was not retained by the resin. The amount of this fraction which is thought to be a polymeric hydrolysis product appears to be a function of metal and sulfuric acid concentrations. Conditions are being sought to give the highest zirconium concentration and the lowest acid concentration that can be used as a feed material for commercial scale-up in the continuous annular chromatographic (CAC) unit without formation of the polymer

Formation of silicides in a cavity applicator microwave system

International Nuclear Information System (INIS)

Thompson, D.C.; Kim, H.C.; Alford, T.L.; Mayer, J.W.

2003-01-01

Metal silicides of nickel and cobalt are formed in a cavity applicator microwave system with a magnetron power of 1200 W and a frequency of 2.45 GHz. X-ray diffraction, Rutherford backscattering spectrometry, and four-point-probe measurements are used to identify the silicide phase present and layer thicknesses. Additional processing confirmed that the products attained from heating by microwaves do not differ appreciably from those attained in heating by thermal processes. Materials properties are used to explain microwave power absorption and demonstrate how to tailor a robust process in which thin film reactions can be attained and specific products isolated

Separation of zirconium and hafnium from acompanying elements by paper chromatography in the systems of alcohol-acid

International Nuclear Information System (INIS)

Lebedeva, G.G.; Viktorova, M.E.

1980-01-01

Solvents have been chosen and investigated which provide expressed separation of zirconium and hafnium at the analysis of mineral raw materials by paper chromatography. The systems with HNO 3 and HCl containing methyl, ethyl, propyl and butyl alcohols have been studied as mobile phases for separation of zirconium and hafnium. It has been shown that alcohol contents and solvent acidity affect the Rsub(f) value of these elements. The C 2 H 5 OH-5MHCl and C 2 H 5 OH-5MHNO 3 systems are most optimal for pre-concentration of zirconium and hafnium

Effects of Silicide Coating on the Interdiffusion between U-7Mo and Al

Energy Technology Data Exchange (ETDEWEB)

Nam, Ji Min; Kim, Ji Hyun; Kim, Sunghwan; Lee, Kyu Hong; Park, Jong Man; Jeong, Yong Jin; Kim, Ki Nam [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2015-05-15

The excessive interaction between the U-Mo alloys and their surrounding Al matrix lead to and excessive local swelling called 'pillowing'. For this reason, KAERI suggested several remedies such as alloying U-Mo with Ti, or Al matrix with Si. In addition, silicide, or nitride coatings on the surface of U-Mo particles have also been proposed to hinder the growth of interaction layer. In this study, centrifugally atomized U-7Mo alloy powders were coated with silicide layers at varying T (T = 900 and 1000 .deg. C) for 30 min, respectively. U-Mo alloy powder was blended with Si powders and subsequently heat-treated to form uranium-silicide coating layers on the surface of U-Mo alloy particles. For an annealing test, silicide-coated U-Mo alloy powders were made into a compact, and Al powders were used as a matrix. From EDS results, transformed uranium aluminide intermetallic compounds were mainly U(Al,Si)3. U(Al,Si)3 phase left the silicide coating layer behind, and formed inside of U-7Mo particles, as shown in Fig. 3(a) and (b). In the case of sample B, Al could not penetrate the silicide coating layer and the coating layers were remained constant, as shown in Fig. 3(c) and (d). From the results, we made a comparison between the compacts of sample A and B, and it was shown that Al can easily diffuse into unreacted Si and U{sub 3}Si{sub 5} mixed layer while U{sub 3}Si{sub 2} acted as a good diffusion barrier at 550 .deg. C though those layers had the same thickness.

Effects of Silicide Coating on the Interdiffusion between U-7Mo and Al

International Nuclear Information System (INIS)

Nam, Ji Min; Kim, Ji Hyun; Kim, Sunghwan; Lee, Kyu Hong; Park, Jong Man; Jeong, Yong Jin; Kim, Ki Nam

2015-01-01

The excessive interaction between the U-Mo alloys and their surrounding Al matrix lead to and excessive local swelling called 'pillowing'. For this reason, KAERI suggested several remedies such as alloying U-Mo with Ti, or Al matrix with Si. In addition, silicide, or nitride coatings on the surface of U-Mo particles have also been proposed to hinder the growth of interaction layer. In this study, centrifugally atomized U-7Mo alloy powders were coated with silicide layers at varying T (T = 900 and 1000 .deg. C) for 30 min, respectively. U-Mo alloy powder was blended with Si powders and subsequently heat-treated to form uranium-silicide coating layers on the surface of U-Mo alloy particles. For an annealing test, silicide-coated U-Mo alloy powders were made into a compact, and Al powders were used as a matrix. From EDS results, transformed uranium aluminide intermetallic compounds were mainly U(Al,Si)3. U(Al,Si)3 phase left the silicide coating layer behind, and formed inside of U-7Mo particles, as shown in Fig. 3(a) and (b). In the case of sample B, Al could not penetrate the silicide coating layer and the coating layers were remained constant, as shown in Fig. 3(c) and (d). From the results, we made a comparison between the compacts of sample A and B, and it was shown that Al can easily diffuse into unreacted Si and U 3 Si 5 mixed layer while U 3 Si 2 acted as a good diffusion barrier at 550 .deg. C though those layers had the same thickness

Nanoscale investigation of the interface situation of plated nickel and thermally formed nickel silicide for silicon solar cell metallization

Energy Technology Data Exchange (ETDEWEB)

Mondon, A., E-mail: andrew.mondon@ise.fraunhofer.de [Fraunhofer ISE, Heidenhofst. 2, D-79110 Freiburg (Germany); Wang, D. [Karlsruhe Nano Micro Facility (KNMF), H.-von-Helmholz-Platz 1, D-76344 Eggenstein-Leopoldshafen (Germany); Zuschlag, A. [Universität Konstanz FB Physik, Jacob-Burckhardt-Str. 27, D-78464 Konstanz (Germany); Bartsch, J.; Glatthaar, M.; Glunz, S.W. [Fraunhofer ISE, Heidenhofst. 2, D-79110 Freiburg (Germany)

2014-12-30

Highlights: • Adhesion of metallization of fully plated nickel–copper contacts on silicon solar cells can be achieved by formation of nickel silicide at the cost of degraded cell performance. • Understanding of silicide growth mechanisms and controlled growth may lead to high performance together with excellent adhesion. • Silicide formation is well known from CMOS production from PVD-Ni on flat surfaces. Yet the deposition methods and therefore layer characteristics and the surface topography are different for plated metallization. • TEM analysis is performed for differently processed samples. • A nickel silicide growth model is created for plated Ni on textured silicon solar cells. - Abstract: In the context of nickel silicide formation from plated nickel layers for solar cell metallization, there are several open questions regarding contact adhesion and electrical properties. Nanoscale characterization by transmission electron microscopy has been employed to support these investigations. Interfacial oxides and silicide phases were investigated on differently prepared samples by different analytical methods associated with transmission electron microscopy analysis. Processing variations included the pre-treatment of samples before nickel plating, the used plating solution and the thermal budget for the nickel–silicon solid-state reaction. It was shown that interface oxides of only few nm thickness on both silicon and nickel silicide are present on the samples, depending on the chosen process sequence, which have been shown to play an important role in adhesion of nickel on silicide in an earlier publication. From sample pretreatment variations, conclusions about the role of an interfacial oxide in silicide formation and its influence on phase formation were drawn. Such an oxide layer hinders silicide formation except for pinhole sites. This reduces the availability of Ni and causes a silicide with low Ni content to form. Without an interfacial oxide

Analysis of impurity effect on Silicide fuels of the RSG-GAS core

International Nuclear Information System (INIS)

Tukiran-Surbakti

2003-01-01

Simulation of impurity effect on silicide fuel of the RSG-GAS core has been done. The aim of this research is to know impurity effect of the U-234 and U-236 isotopes in the silicide fuels on the core criticality. The silicide fuels of 250 g U loading and 19.75 of enrichment is used in this simulation. Cross section constant of fuels and non-structure material of core are generated by WIMSD/4 computer code, meanwhile impurity concentration was arranged from 0.01% to 2%. From the result of analysis can be concluded that the isotopes impurity in the fuels could make trouble in the core and the core can not be operated at critical after a half of its cycle length (350 MW D)

Ceramic material suitable for repair of a space vehicle component in a microgravity and vacuum environment, method of making same, and method of repairing a space vehicle component

Science.gov (United States)

Riedell, James A. (Inventor); Easler, Timothy E. (Inventor)

2009-01-01

A precursor of a ceramic adhesive suitable for use in a vacuum, thermal, and microgravity environment. The precursor of the ceramic adhesive includes a silicon-based, preceramic polymer and at least one ceramic powder selected from the group consisting of aluminum oxide, aluminum nitride, boron carbide, boron oxide, boron nitride, hafnium boride, hafnium carbide, hafnium oxide, lithium aluminate, molybdenum silicide, niobium carbide, niobium nitride, silicon boride, silicon carbide, silicon oxide, silicon nitride, tin oxide, tantalum boride, tantalum carbide, tantalum oxide, tantalum nitride, titanium boride, titanium carbide, titanium oxide, titanium nitride, yttrium oxide, zirconium diboride, zirconium carbide, zirconium oxide, and zirconium silicate. Methods of forming the ceramic adhesive and of repairing a substrate in a vacuum and microgravity environment are also disclosed, as is a substrate repaired with the ceramic adhesive.

The influence of alloying on the phase formation sequence of ultra-thin nickel silicide films and on the inheritance of texture

Science.gov (United States)

Geenen, F. A.; Solano, E.; Jordan-Sweet, J.; Lavoie, C.; Mocuta, C.; Detavernier, C.

2018-05-01

The controlled formation of silicide materials is an ongoing challenge to facilitate the electrical contact of Si-based transistors. Due to the ongoing miniaturisation of the transistor, the silicide is trending to ever-thinner thickness's. The corresponding increase in surface-to-volume ratio emphasises the importance of low-energetic interfaces. Intriguingly, the thickness reduction of nickel silicides results in an abrupt change in phase sequence. This paper investigates the sequence of the silicides phases and their preferential orientation with respect to the Si(001) substrate, for both "thin" (i.e., 9 nm) and "ultra-thin" (i.e., 3 nm) Ni films. Furthermore, as the addition of ternary elements is often considered in order to tailor the silicides' properties, additives of Al, Co, and Pt are also included in this study. Our results show that the first silicide formed is epitaxial θ-Ni2Si, regardless of initial thickness or alloyed composition. The transformations towards subsequent silicides are changed through the additive elements, which can be understood through solubility arguments and classical nucleation theory. The crystalline alignment of the formed silicides with the substrate significantly differs through alloying. The observed textures of sequential silicides could be linked through texture inheritance. Our study illustrates the nucleation of a new phase drive to reduce the interfacial energy at the silicide-substrate interface as well as at the interface with the silicide which is being consumed for these sub-10 nm thin films.

Nanoscale investigation of the interface situation of plated nickel and thermally formed nickel silicide for silicon solar cell metallization

Science.gov (United States)

Mondon, A.; Wang, D.; Zuschlag, A.; Bartsch, J.; Glatthaar, M.; Glunz, S. W.

2014-12-01

In the context of nickel silicide formation from plated nickel layers for solar cell metallization, there are several open questions regarding contact adhesion and electrical properties. Nanoscale characterization by transmission electron microscopy has been employed to support these investigations. Interfacial oxides and silicide phases were investigated on differently prepared samples by different analytical methods associated with transmission electron microscopy analysis. Processing variations included the pre-treatment of samples before nickel plating, the used plating solution and the thermal budget for the nickel-silicon solid-state reaction. It was shown that interface oxides of only few nm thickness on both silicon and nickel silicide are present on the samples, depending on the chosen process sequence, which have been shown to play an important role in adhesion of nickel on silicide in an earlier publication. From sample pretreatment variations, conclusions about the role of an interfacial oxide in silicide formation and its influence on phase formation were drawn. Such an oxide layer hinders silicide formation except for pinhole sites. This reduces the availability of Ni and causes a silicide with low Ni content to form. Without an interfacial oxide a continuous nickel silicide of greater depth, polycrystalline modification and expected phase according to thermal budget is formed. Information about the nature of silicide growth on typical solar cell surfaces could be obtained from silicide phase and geometric observations, which were supported by FIB tomography. The theory of isotropic NiSi growth and orientation dependent NiSi2 growth was derived. By this, a very well performing low-cost metallization for silicon solar cells has been brought an important step closer to industrial introduction.

A Study on Silicide Coatings as Diffusion barrier for U-7Mo Dispersion Fuel

Energy Technology Data Exchange (ETDEWEB)

Won, Ju Jin; Kim, Sung Hwan; Lee, Kyu Hong; Jeong, Yong Jin; Kim, Ki Nam; Park, Jong Man; Lee, Chong Tak [KAERI, Daejeon (Korea, Republic of)

2016-05-15

Gamma phase U-Mo alloys are regarded as one of the promising candidates for advanced research reactor fuel when it comes to the irradiation performance. However, it has been reported that interaction layer formation between the UMo alloys and Al matrix degrades the irradiation performance of U-Mo dispersion fuel. The excessive interaction between the U-Mo alloys and their surrounding Al matrix lead to excessive local swelling called 'pillowing'. For this reason, KAERI suggested several remedies such as alloying U-Mo with Al matrix with Si. In addition, silicide or nitride coatings on the surface of U-Mo particles have also been proposed to hinder the growth of the interaction layer. In this study, centrifugally atomized U-7Mo alloy powders were coated with silicide layers at 900 .deg. C for 1hr. U-Mo alloy powder was mixed with MoSi{sub 2}, Si and ZrSi{sub 2} powders and subsequently heat-treated to form uranium-silicide coating layers on the surface of U-Mo alloy particles. Silicide coated U-Mo powders and characterized using scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDS) and X-ray diffractometer (XRD). The ZrSi{sub 2} coating layers has a thickness of about 1∼ 2μm. The surface of a silicide coated particle was very rough and silicide powder attached to the surface of the coating layer. 3. The XRD analysis of the coating layers showed that, they consisted of compounds such as U3Si{sub 2}, USi{sub 2}.

The Accident Analysis Due to Reactivity Insertion of RSG GAS 3.55 g U/cc Silicide Core

International Nuclear Information System (INIS)

Endiah Puji-Hastuti; Surbakti, Tukiran

2004-01-01

The fuels of RSG-GAS reactor was changed from uranium oxide with 250 g U of loading or 2.96 g U/cc of fuel loading to uranium silicide with the same loading. The silicide fuels can be used in higher density, staying longer in the reactor core and hence having a longer cycle length. The silicide fuel in RSG-GAS core was made up in step-wise by using mixed up core Firstly, it was used silicide fuel with 250 g U of loading and then, silicide fuel with 300 g U of loading (3.55 g U/cc of fuel loading). In every step-wise of fuel loading, it must be analyzed its safety margin. In this occasion, the reactivity accident of RSG-GAS core with 300 g U of silicide fuel loading is analyzed. The calculation was done using EUREKA-2/RR code available at P2TRR. The calculation was done by reactivity insertion at start up and power rangers. The worst case accident is transient due to control rod with drawl failure at start up by means of lowest initial power (0.1 W), either in power range. From all cases which have been done, the results of analysis showed that there is no anomaly and safety margin break at RSG-GAS core with 300 g U silicide fuel loading. (author)

Evaluation of anomalies during nickel and titanium silicide formation using the effective heat of formation mode

CSIR Research Space (South Africa)

Pretorius, R

1993-11-01

Full Text Available , as well as the observed sequence of growth of different silicide phases, are not in agree- ment with thermodynamic considerations [26]. In the case of the nickel silicides Ni,Si is nearly always found to be the first... to determine how the oxygen content in the silicon affects phase formation. We also show how the anomalous behaviour of titanium and nickel silicide formation can be explained thermodynamically by using the ?effective heat...

Low-voltage bendable pentacene thin-film transistor with stainless steel substrate and polystyrene-coated hafnium silicate dielectric.

Science.gov (United States)

Yun, Dong-Jin; Lee, Seunghyup; Yong, Kijung; Rhee, Shi-Woo

2012-04-01

The hafnium silicate and aluminum oxide high-k dielectrics were deposited on stainless steel substrate using atomic layer deposition process and octadecyltrichlorosilane (OTS) and polystyrene (PS) were treated improve crystallinity of pentacene grown on them. Besides, the effects of the pentacene deposition condition on the morphologies, crystallinities and electrical properties of pentacene were characterized. Therefore, the surface treatment condition on dielectric and pentacene deposition conditions were optimized. The pentacene grown on polystyrene coated high-k dielectric at low deposition rate and temperature (0.2-0.3 Å/s and R.T.) showed the largest grain size (0.8-1.0 μm) and highest crystallinity among pentacenes deposited various deposition conditions, and the pentacene TFT with polystyrene coated high-k dielectric showed excellent device-performance. To decrease threshold voltage of pentacene TFT, the polystyrene-thickness on high-k dielectric was controlled using different concentration of polystyrene solution. As the polystyrene-thickness on hafnium silicate decreases, the dielectric constant of polystyrene/hafnium silicate increases, while the crystallinity of pentacene grown on polystyrene/hafnium silicate did not change. Using low-thickness polystyrene coated hafnium silicate dielectric, the high-performance and low voltage operating (pentacene thin film transistor (μ: ~2 cm(2)/(V s), on/off ratio, >1 × 10(4)) and complementary inverter (DC gains, ~20) could be fabricated.

Primary hafnium metal sponge and other forms, approved standard 1973

International Nuclear Information System (INIS)

Anon.

1975-01-01

A specification is presented covering virgin hafnium metal commonly designated as sponge because of its porous, sponge-like texture; it may also be in other forms such as chunklets. The specification does not cover crystal bar

Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers

Energy Technology Data Exchange (ETDEWEB)

Yuryev, V. A., E-mail: vyuryev@kapella.gpi.ru; Chizh, K. V.; Chapnin, V. A.; Mironov, S. A.; Dubkov, V. P.; Uvarov, O. V.; Kalinushkin, V. P. [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow 119991 (Russian Federation); Senkov, V. M. [P. N. Lebedev Physical Institute of the Russian Academy of Sciences, 53 Leninskiy Avenue, Moscow 119991 (Russian Federation); Nalivaiko, O. Y. [JSC “Integral” – “Integral” Holding Management Company, 121A, Kazintsa I. P. Street, Minsk 220108 (Belarus); Novikau, A. G.; Gaiduk, P. I. [Belarusian State University, 4 Nezavisimosti Avenue, 220030 Minsk (Belarus)

2015-05-28

Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si{sub 3}N{sub 4}/SiO{sub 2}/Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by a low-temperature process have been studied by means of the scanning transmission electron microscopy; they have also been explored by means of the two-wavelength X-ray structural phase analysis and the X-ray photoelectron spectroscopy. Temperature coefficient of voltage for the forward current of a single diode is shown to reach the value of about −2%/ °C in the temperature interval from 25 to 50 °C.

Evolution of the hafnium isotopic composition in the RBMK reactor

International Nuclear Information System (INIS)

Jurkevicius, A.; Remeikis, V.

2002-01-01

The isotopic composition of hafnium in the radial neutron flux sensor of the RBMK-1500 reactor, the rates of the neutron absorption on Hf isotopes and the neutron spectrum in the sensor were numerically modeled. The sequence SAS2 (Shielding Analysis Sequence) program from the package SCALE 4.4A and the HELIOS code system were used for calculations. It has been obtained that the overall neutron absorption rates in hafnium for the sensors located in the 2.4 % and 2.6 % enrichment uranium-erbium nuclear fuel assemblies are by 16 % and 19 % lower than in the 2.0 % enrichment uranium nuclear fuel assemblies. The overall neutron absorption rate in hafnium decreases 2.70-2.75 times due to the sensor burnup to 5800 MW d. The sensitivity of the Hf sensors to the thermal neutron flux increases twice due to the nuclear fuel assembly burnup to 3000 MW d. The corrective factors ξ d (I) at the different integral current I of the sensors and ξ td (E) at the different burnup E of the nuclear fuel assemblies were calculated. The obtained dependence ξ d (I) calculated numerically was compared to the experimental one determined by comparing signals of the fresh sensor and the sensor with the integral current I and by processing repeated calibration results of Hf sensors in RBMK-1500 reactors. The relative relationship coefficients K T (T FA ) were found for all RBMK-1500 nuclear fuel types. (author)

Preparation of hafnium metal by calciothermic reduction of HfO2

International Nuclear Information System (INIS)

Sharma, I.G.; Vijay, P.L.; Sehra, J.C.; Sundaram, C.V.

1975-01-01

Hafnium metal powder has been produced by the calciothermic reduction of hafnium oxide. The influence of various experimental parameters - such as amount of calcium in excess of stoichiometric requirement, temperature, and time of reduction - on the yield and purity of the metal has been studied. The metal powder obtained by reduction at 960 0 C (two hours) with a calcium excess of 70% analysed 600 ppm of oxygen and 147 ppm of nitrogen. A reduction efficiency of 96% has been achieved under these conditions. The refining of the powder by electron beam melting, fused salt electrolysis, and iodide process has been studied. The oxygen content in the metal could be brought down from 6900 to 148 ppm by electron beam melt-refining. (author)

ENTIRELY AQUEOUS SOLUTION-GEL ROUTE FOR THE PREPARATION OF ZIRCONIUM CARBIDE, HAFNIUM CARBIDE AND THEIR TERNARY CARBIDE POWDERS

Directory of Open Access Journals (Sweden)

Zhang Changrui

2016-07-01

Full Text Available An entirely aqueous solution-gel route has been developed for the synthesis of zirconium carbide, hafnium carbide and their ternary carbide powders. Zirconium oxychloride (ZrOCl₂.8H₂O, malic acid (MA and ethylene glycol (EG were dissolved in water to form the aqueous zirconium carbide precursor. Afterwards, this aqueous precursor was gelled and transformed into zirconium carbide at a relatively low temperature (1200 °C for achieving an intimate mixing of the intermediate products. Hafnium and the ternary carbide powders were also synthesized via the same aqueous route. All the zirconium, hafnium and ternary carbide powders exhibited a particle size of ∼100 nm.

Molybdenum silicide based materials and their properties

International Nuclear Information System (INIS)

Yao, Z.; Stiglich, J.; Sudarshan, T.S.

1999-01-01

Molybdenum disilicide (MoSi 2 ) is a promising candidate material for high temperature structural applications. It is a high melting point (2030 C) material with excellent oxidation resistance and a moderate density (6.24 g/cm 3 ). However, low toughness at low temperatures and high creep rates at elevated temperatures have hindered its commercialization in structural applications. Much effort has been invested in MoSi 2 composites as alternatives to pure molybdenum disilicide for oxidizing and aggressive environments. Molybdenum disilicide-based heating elements have been used extensively in high-temperature furnaces. The low electrical resistance of silicides in combination with high thermal stability, electron-migration resistance, and excellent diffusion-barrier characteristics is important for microelectronic applications. Projected applications of MoSi 2 -based materials include turbine airfoils, combustion chamber components in oxidizing environments, missile nozzles, molten metal lances, industrial gas burners, diesel engine glow plugs, and materials for glass processing. On this paper, synthesis, fabrication, and properties of the monolithic and composite molybdenum silicides are reviewed

On the phase formation of sputtered hafnium oxide and oxynitride films

International Nuclear Information System (INIS)

Sarakinos, K.; Music, D.; Mraz, S.; Baben, M. to; Jiang, K.; Nahif, F.; Braun, A.; Zilkens, C.; Schneider, J. M.; Konstantinidis, S.; Renaux, F.; Cossement, D.; Munnik, F.

2010-01-01

Hafnium oxynitride films are deposited from a Hf target employing direct current magnetron sputtering in an Ar-O 2 -N 2 atmosphere. It is shown that the presence of N 2 allows for the stabilization of the transition zone between the metallic and the compound sputtering mode enabling deposition of films at well defined conditions of target coverage by varying the O 2 partial pressure. Plasma analysis reveals that this experimental strategy facilitates control over the flux of the O - ions which are generated on the oxidized target surface and accelerated by the negative target potential toward the growing film. An arrangement that enables film growth without O - ion bombardment is also implemented. Moreover, stabilization of the transition sputtering zone and control of the O - ion flux without N 2 addition is achieved employing high power pulsed magnetron sputtering. Structural characterization of the deposited films unambiguously proves that the phase formation of hafnium oxide and hafnium oxynitride films with the crystal structure of HfO 2 is independent from the O - bombardment conditions. Experimental and theoretical data indicate that the presence of vacancies and/or the substitution of O by N atoms in the nonmetal sublattice favor the formation of the cubic and/or the tetragonal HfO 2 crystal structure at the expense of the monoclinic HfO 2 one.

Solvent extraction of titanium(IV), zirconium(IV) and hafnium(IV) salicylates using liquid ion exchangers

Energy Technology Data Exchange (ETDEWEB)

Sundaramurthi, N M; Shinde, V M

1989-02-01

A solvent extraction method is proposed for the extraction of quadrivalent titanium, zirconium an hafnium from salicylate media using liquid ion exchangers such as Aliquat 336 and trioctylamine dissolved in xylene. The optimum conditions were evaluated from a critical study of the following: pH, salicylate concentration, amine concentration, diluent and period of equilibration. The method allows the separation of titanium, zirconium and hafnium from binary mixtures containing commonly associated metal ions and is applicable to the analysis of real samples such as BCS-CRM 387 nimonic 901, BCS-CRM 243/4 ferro-titanium, BCS-CRM 307 magnesium alloy and BCS-CRM 388 zircon. Titanium is determined either with hydrogen peroxide or by atomic absorption spectrometry whereas zirconium and hafnium are determined spectrophotometrically with Alizarin Red S and Zylenol Orange, respectively. The results of both separation and analysis are reported. The method is precise, accurate and fast.

Solvent extraction of zirconium and hafnium using MIBK-HSCN-HCL process

International Nuclear Information System (INIS)

Borges, J.A.L.; Cunha, O.G.C. da

1985-01-01

The separation process of zirconium and hafnium, using MIBK as extractant in a set of mixer-settler is described. The chemical analysis was done by X-ray fluorescence and emission spectrography. (Author) [pt

Post-pulse detail metallographic examinations of low-enriched uranium silicide plate-type miniature fuel

International Nuclear Information System (INIS)

Yanagisawa, Kazuaki

1991-10-01

Pulse irradiation at Nuclear Safety Research Reactor (NSRR) was performed using low-enriched (19.89 w% 235 U) unirradiated silicide plate-type miniature fuel which had a density of 4.8 gU/cm 3 . Experimental aims are to understand the dimensional stability and to clarify the failure threshold of the silicide plate-type miniature fuel under power transient conditions through post-pulse detail metallographic examinations. A silicide plate-type miniature fuel was loaded into an irradiation capsule and irradiated by a single pulse. Deposited energies given in the experiments were 62, 77, 116 and 154 cal/g·fuel, which lead to corresponding peak fuel plate temperatures, 201 ± 28degC, 187 ± 10degC, 418 ± 74degC and 871 ± 74degC, respectively. Below 400degC, reliability and dimensional stability of the silicide plate fuel was sustained, and the silicide plate fuel was intact. Up to 540degC, wall-through intergranular crackings occurred in the Al-3%Mg alloy cladding. With the increase of the temperature, the melting of the aluminum cladding followed by recrystallization, the denudation of fuel core and the plate-through intergranular cracking were observed. With the increase of the temperature beyond 400degC, the bowing of fuel plate became significant. Above the temperature of 640degC molten aluminum partially reacted with the fuel core, partially flowed downward under the influence of surface tension and gravity, and partially formed agglomerations. Judging from these experimental observations, the fuel-plate above 400degC tends to reduce its dimensional stability. Despite of the apparent silicide fuel-plate failure, neither generation of pressure pulse nor that of mechanical energy occurred at all. (J.P.N.)

RA-3 core with uranium silicide fuel elements

International Nuclear Information System (INIS)

Abbate, Maximo J.; Sbaffoni, Maria M.

2000-01-01

Following on with studies on uranium silicide fuel elements, this paper reports some comparisons between the use of standard ECN [U 3 O 8 ] fuel elements and type P-06 [from U 3 Si 2 ] fuel elements in the RA-3 core.The first results showed that the calculated overall mean burn up is in agreement with that reported for the facility, which gives more confidence to the successive ones. Comparing the mentioned cores, the silicide one presents several advantages such as: -) a mean burn up increase of 18 %; -) an extraction burn up increase of 20 %; -) 37.4 % increase in full power days, for mean burn up. All this is meritorious for this fuel. Moreover, grouped and homogenized libraries were prepared for CITVAP code that will be used for planning experiments and other bidimensional studies. Preliminary calculations were also performed. (author)

Radiation effects on the electrical properties of hafnium oxide based MOS capacitors.

Energy Technology Data Exchange (ETDEWEB)

Petrosky, J. C. (Air Force Institute of Technology, Wright-Patterson Air Force Base, OH); McClory, J. W. (Air Force Institute of Technology, Wright-Patterson Air Force Base, OH); Bielejec, Edward Salvador; Foster, J. C. (Air Force Institute of Technology, Wright-Patterson Air Force Base, OH)

2010-10-01

Hafnium oxide-based MOS capacitors were investigated to determine electrical property response to radiation environments. In situ capacitance versus voltage measurements were analyzed to identify voltage shifting as a result of changes to trapped charge with increasing dose of gamma, neutron, and ion radiation. In situ measurements required investigation and optimization of capacitor fabrication to include dicing, cleaning, metalization, packaging, and wire bonding. A top metal contact of 200 angstroms of titanium followed by 2800 angstroms of gold allowed for repeatable wire bonding and proper electrical response. Gamma and ion irradiations of atomic layer deposited hafnium oxide on silicon devices both resulted in a midgap voltage shift of no more than 0.2 V toward less positive voltages. This shift indicates recombination of radiation induced positive charge with negative trapped charge in the bulk oxide. Silicon ion irradiation caused interface effects in addition to oxide trap effects that resulted in a flatband voltage shift of approximately 0.6 V also toward less positive voltages. Additionally, no bias dependent voltage shifts with gamma irradiation and strong oxide capacitance room temperature annealing after ion irradiation was observed. These characteristics, in addition to the small voltage shifts observed, demonstrate the radiation hardness of hafnium oxide and its applicability for use in space systems.

Investigation of chlorination of zirconium and hafnium and their compounds in discharge from hollow cathode

International Nuclear Information System (INIS)

Ioffe, R.B.; Korovin, Yu.I.

1978-01-01

The possibility is investigated of chlorinating various zirconium and hafnium compounds (metal, oxide, carbide) in a hot discharge from a hollow cathode with various chlorinating reagents: copper monochloride, nickel chloride, magnesium chloride, for the purpose of accelerating their entrance into the excitation zone. It has been shown thermodynamically and experimentally that chlorination of metal zirconium and hafnium and their carbides with copper monochloride in hot hollow cathode conditions provides a sharp increase in the intensity of the lines of these elements

Development and characterization of ultrathin hafnium titanates as high permittivity gate insulators

Science.gov (United States)

Li, Min

High permittivity or high-kappa materials are being developed for use as gate insulators for future ultrascaled metal oxide semiconductor field effect transistors (MOSFETs). Hafnium containing compounds are the leading candidates. Due to its moderate permittivity, however, it is difficult to achieve HfO2 gate structures with an EOT well below 1.0 nm. One approach to increase HfO2 permittivity is combining it with a very high-kappa material, such as TiO2. In this thesis, we systematically studied the electrical and physical characteristics of high-kappa hafnium titanates films as gate insulators. A series of HfxTi1-xO2 films with well-controlled composition were deposited using an MOCVD system. The physical properties of the films were analyzed using a variety of characterization techniques. X-ray micro diffraction indicates that the Ti-rich thin film is more immune to crystallization. TEM analysis showed that the thick stoichiometric HfTiO 4 film has an orthorhombic structure and large anisotropic grains. The C-V curves from the devices with the hafnium titanates films displayed relatively low hysteresis. In a certain composition range, the interfacial layer (IL) EOT and permittivity of HfxTi1-x O2 increases linearly with increasing Ti. The charge is negative for HfxTi1-xO2/IL and positive for Si/IL interface, and the magnitude increases as Hf increases. For ultra-thin films (less than 2 nm EOT), the leakage current increases with increasing HE Moreover, the Hf-rich sample has weaker temperature dependence of the current. In the MOSFET devices with the hafnium titanates films, normal transistor characteristics were observed, also electron mobility degradation. Next, we investigated the effects that different pre-deposition surface treatments, including HF dipping, NH3 surface nitridation, and HfO2 deposition, have on the electrical properties of hafnium titanates. Surface nitridation shows stronger effect than the thin HfO2 layer. The nitrided samples displayed a

Separation of zirconium and hafnium using paper distribution chromatography

International Nuclear Information System (INIS)

Lebedeva, G.G.; Viktorova, M.E.

1981-01-01

A method is suggested of chromatographic separation of zirconium and hafnium in a CCl 4 -tributyl phosphate system (1:9) containing KCl as a salting-out agent in 5 M HNO 3 at 28-30 deg C. Zr and Hf are deterfmined in articiial mixtures under optimal chromatography conditions using visual colorimetry [ru

Hafnium as a prospective absorber for VVER-1000 reactors of Ukraine

International Nuclear Information System (INIS)

Afanas'ev, A.A.; Konotop, Yu.F.; Odejchuk, N.L.

2000-01-01

Nuclear-physical parameters of hafnium having in mind its use as an absorber, are considered. Technical aspects of Hf production are exposed. Use of B 4 C/Hf absorber is twice cheaper than a standard one

Near surface silicide formation after off-normal Fe-implantation of Si(001) surfaces

Energy Technology Data Exchange (ETDEWEB)

Khanbabaee, B., E-mail: khanbabaee@physik.uni-siegen.de; Pietsch, U. [Solid State Physics, University of Siegen, D-57068 Siegen (Germany); Lützenkirchen-Hecht, D. [Fachbereich C - Physik, Bergische Universität Wuppertal, D-42097 Wuppertal (Germany); Hübner, R.; Grenzer, J.; Facsko, S. [Helmholtz-Zentrum Dresden-Rossendorf, 01314 Dresden (Germany)

2014-07-14

We report on formation of non-crystalline Fe-silicides of various stoichiometries below the amorphized surface of crystalline Si(001) after irradiation with 5 keV Fe{sup +} ions under off-normal incidence. We examined samples prepared with ion fluences of 0.1 × 10{sup 17} and 5 × 10{sup 17} ions cm{sup −2} exhibiting a flat and patterned surface morphology, respectively. Whereas the iron silicides are found across the whole surface of the flat sample, they are concentrated at the top of ridges at the rippled surface. A depth resolved analysis of the chemical states of Si and Fe atoms in the near surface region was performed by combining X-ray photoelectron spectroscopy and X-ray absorption spectroscopy (XAS) using synchrotron radiation. The chemical shift and the line shape of the Si 2p core levels and valence bands were measured and associated with the formation of silicide bonds of different stoichiometric composition changing from an Fe-rich silicides (Fe{sub 3}Si) close to the surface into a Si-rich silicide (FeSi{sub 2}) towards the inner interface to the Si(001) substrate. This finding is supported by XAS analysis at the Fe K-edge which shows changes of the chemical environment and the near order atomic coordination of the Fe atoms in the region close to surface. Because a similar Fe depth profile has been found for samples co-sputtered with Fe during Kr{sup +} ion irradiation, our results suggest the importance of chemically bonded Fe in the surface region for the process of ripple formation.

Evaluation of thermodynamic data on zirconium and hafnium halides and oxyhalides by means of transport experiments

International Nuclear Information System (INIS)

Dittmer, G.; Niemann, U.

1987-01-01

A consistent set of thermodynamic data for zirconium and hafnium halides, oxides and oxyhalides was achieved. It was found that formation enthalpies of gaseous compounds could be derived from solubility measurements together with theoretical estimations and a revision of literature data. Free energy functions were calculated employing statistical mechanics. Data for liquid and solid compounds were obtained via sublimation and vaporization data. Chemical equilibria of zirconium and hafnium with halogens are discussed. 51 refs.; 16 figs.; 14 tabs

Nickel silicide thin films as masking and structural layers for silicon bulk micro-machining by potassium hydroxide wet etching

International Nuclear Information System (INIS)

Bhaskaran, M; Sriram, S; Sim, L W

2008-01-01

This paper studies the feasibility of using titanium and nickel silicide thin films as mask materials for silicon bulk micro-machining. Thin films of nickel silicide were found to be more resistant to wet etching in potassium hydroxide. The use of nickel silicide as a structural material, by fabricating micro-beams of varying dimensions, is demonstrated. The micro-structures were realized using these thin films with wet etching using potassium hydroxide solution on (1 0 0) and (1 1 0) silicon substrates. These results show that nickel silicide is a suitable alternative to silicon nitride for silicon bulk micro-machining

Electrodeposition in molten salts of metals used in nuclear industry: hafnium and uranium

International Nuclear Information System (INIS)

Serrano, K.

1998-01-01

The aim of this work is to study the electrodeposition in molten salts of metals used in nuclear industry: hafnium and uranium. The experiment is carried out in a molten alkaline halogenide medium in a temperature range between 670 and 750 degrees Celsius. The first part of this work concerns more particularly the electrochemical behaviour of the hafnium and uranium ions in the electrolytic solution. The reduction mechanisms of these ions have been studied by the use of three methods: cyclic voltametry, chrono-potentiometry and square wave voltametry. Results have shown that the process of metal deposition is difficult to explain because secondary reactions (as for instance: adsorption phenomena or cathodic deposit dissolution) occur. The uranium germination has then been studied by modelling of chrono-amperograms. The experiments have shown that the deposition is the result of the initial uranium crystal growth and depends on the electrolyte diffusion. The second part of this work deals with the implementation of hafnium and uranium deposition taking into account the preceding mechanistic studies. Depositions have all been observed by physical methods as for instance scanning electron microscopy. Particular experimental solutions (soluble anode, addition of fluoride ions to the electrolyte) have been used. The obtained deposition of hafnium is smooth and adheres very well to the substrate. The uranium depositions have been implemented with the use of a soluble anode. Uranium is deposited in a dendritic shape to the cathode. It has also been shown that the electro-kinetic parameters (temperature, uranium ions concentration, current density) have not an important influence on the dendritic morphology of the deposition. This morphology could be the consequence of particular convection movements to the surface of the cathode. (O.M.)

Self-organized patterns along sidewalls of iron silicide nanowires on Si(110) and their origin

Energy Technology Data Exchange (ETDEWEB)

Das, Debolina; Mahato, J. C.; Bisi, Bhaskar; Dev, B. N., E-mail: msbnd@iacs.res.in [Department of Materials Science, Indian Association for the Cultivation of Science, Kolkata 700032 (India); Satpati, B. [Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700064 (India)

2014-11-10

Iron silicide (cubic FeSi{sub 2}) nanowires have been grown on Si(110) by reactive deposition epitaxy and investigated by scanning tunneling microscopy and scanning/transmission electron microscopy. On an otherwise uniform nanowire, a semi-periodic pattern along the edges of FeSi{sub 2} nanowires has been discovered. The origin of such growth patterns has been traced to initial growth of silicide nanodots with a pyramidal Si base at the chevron-like atomic arrangement of a clean reconstructed Si(110) surface. The pyramidal base evolves into a comb-like structure along the edges of the nanowires. This causes the semi-periodic structure of the iron silicide nanowires along their edges.

Core conversion study from silicide to molybdenum fuel in the Indonesian 30 MW multipurpose reactor G.A. Siwabessy (RSG-GAS)

International Nuclear Information System (INIS)

Sembiring, T.M.; Kuntoro, I.

2005-01-01

This paper describes the core conversion from silicide to molybdenum core through a series of silicide (2.96 gU cm -3 ) - molybdenum (3.55 gUcm -3 ) mixed transition cores for the Indonesian 30 MW-Multipurpose G.A. Siwabessy (RSGGAS) reactor. The core calculations are carried out using the two-dimensional multigroup neutron diffusion method code of Batan-EQUIL-2D. The calculated results showed that the proposed silicide-molybdenum mixed transition cores, using the same refueling/reshuffling scheme, meet the safety criteria and it can be used in safely converting from an all-silicide core to an all-molybdenum core. (author)

Synthesis and characterization of Ho3+ doped hafnium oxide TLD for radiation dosimeter

International Nuclear Information System (INIS)

Sekar, Nandakumar; Ganesan, Bharanidharan; Sahib, Hajee Reyaz Ali; Aruna, Prakasarao; Ganesan, Singaravelu; Thamilkumar, P.; Rai, R.R.

2017-01-01

Cancer is a dreaded disease which is treated by Radiotherapy, Chemotherapy and Surgery. Radiotherapy plays a vital role in treatment of cancer and recently measurements of invivo radiation dosimetric in patient is of great interest due to high dose gradients in advanced technology like IMRT, IGRT etc. Hence, for the last few decades, a great degree of interest has been shown for the hafnium oxide for radiation dosimetric applications, due to its high dielectric constant, wide band gap and better interface properties such as chemical stability, conduction band offset and thermodynamic stability. In the present study, Synthesis and characterization of Ho 3+ doped Hafnium oxide were carried out and its applications towards radiation dosimeter were investigated

Use of hafnium in control bars of nuclear reactors; Uso de hafnio en barras de control de reactores nucleares

Energy Technology Data Exchange (ETDEWEB)

Ramirez S, J.R.; Alonso V, G. [ININ, 52045 Ocoyoacac, Estado de Mexico (Mexico)]. e-mail: jrrs@nuclear.inin-mx

2003-07-01

Recently the use of hafnium as neutron absorber material in nuclear reactors has been reason of investigation by virtue of that this material has nuclear properties as to the neutrons absorption and structural that can prolong the useful life of the control mechanisms of the nuclear reactors. In this work some of those more significant hafnium properties are presented like nuclear material. Also there are presented calculations carried out with the HELIOS code for fuel cells of uranium oxide and of uranium and plutonium mixed oxides under controlled conditions with conventional bars of boron carbide and also with similar bars to which are substituted the absorbent material by metallic hafnium, the results are presented in this work. (Author)

Multi-layered silicides coating for vanadium alloys for generation IV reactors

International Nuclear Information System (INIS)

Mathieu, S.; Chaia, N.; Vilasi, M.; Le Flem, M.

2012-01-01

The halide-activated pack-cementation technique was employed to fabricate a diffusion coating that is resistant both to isothermal and to cyclic oxidation in air at 650 degrees C on the surface of the V-4Cr-4Ti vanadium alloy that is a potential core component of future nuclear systems. A thermodynamic assessment determined the deposit conditions in terms of master alloy, activator, filler and temperature. The partial pressures of the main gaseous species (SiCl 4 , SiCl 2 and VCl 2 ) in the pack were calculated with the master alloy Si and the mixture VSi 2 + Si. The VSi 2 + Si master alloy was used to limit vanadium loss from the surface. The obtained coating consisted of multi-layered V x Si y silicides with an outer layer of VSi 2 . This silicide developed a protective layer of silica at 650 degrees C in air and was not susceptible to the pest phenomenon, unlike other refractory silicides (MoSi 2 , NbSi 2 ). We suggest that VSi 2 exhibits no risk of rapid degradation in the gas fast reactor (GFR) conditions. (authors)

Plasma spraying of zirconium carbide – hafnium carbide – tungsten cermets

Czech Academy of Sciences Publication Activity Database

Brožek, Vlastimil; Ctibor, Pavel; Cheong, D.-I.; Yang, S.-H.

2009-01-01

Roč. 9, č. 1 (2009), s. 49-64 ISSN 1335-8987 Institutional research plan: CEZ:AV0Z20430508 Keywords : Plasma spraying * cermet coatings * microhardness * zirconium carbide * hafnium carbide * tungsten * water stabilized plasma Subject RIV: JH - Ceramics, Fire-Resistant Materials and Glass

Fuel-cycle cost comparisons with oxide and silicide fuels

International Nuclear Information System (INIS)

Matos, J.E.; Freese, K.E.

1982-01-01

This paper addresses fuel cycle cost comparisons for a generic 10 MW reactor with HEU aluminide fuel and with LEU oxide and silicide fuels in several fuel element geometries. The intention of this study is to provide a consistent assessment of various design options from a cost point of view. Fuel cycle cost benefits could result if a number of reactors were to utilize fuel elements with the same number or different numbers of the same standard fuel plate. Data are presented to quantify these potential cost benefits. This analysis shows that there are a number of fuel element designs using LEU oxide or silicide fuels that have either the same or lower total fuel cycle costs than the HEU design. Use of these fuels with the uranium densities considered requires that they are successfully demonstrated and licensed

The Leakage Current Improvement of a Ni-Silicided SiGe/Si Junction Using a Si Cap Layer and the PAI Technique

International Nuclear Information System (INIS)

Chang Jian-Guang; Wu Chun-Bo; Ji Xiao-Li; Ma Hao-Wen; Yan Feng; Shi Yi; Zhang Rong

2012-01-01

We investigate the leakage current of ultra-shallow Ni-silicided SiGe/Si junctions for 45 nm CMOS technology using a Si cap layer and the pre-amorphization implantation (PAI) process. It is found that with the conventional Ni silicide method, the leakage current of a p + (SiGe)—n(Si) junction is large and attributed to band-to-band tunneling and the generation-recombination process. The two leakage contributors can be suppressed quite effectively when a Si cap layer is added in the Ni silicide method. The leakage reduction is about one order of magnitude and could be associated with the suppression of the agglomeration of the Ni germano-silicide film. In addition, the PAI process after the application of a Si cap layer has little effect on improving the junction leakage but reduces the sheet resistance of the silicide film. As a result, the novel Ni silicide method using a Si cap combined with PAI is a promising choice for SiGe junctions in advanced technology. (cross-disciplinary physics and related areas of science and technology)

Safeguarding subcriticality during loading and shuffling operations in the higher density of the RSG-GAS's silicide core

International Nuclear Information System (INIS)

Sembiring, T.M.; Kuntoro, I.

2003-01-01

The core conversion program of the RSG-GAS reactor is to convert the all-oxide to all-silicide core. The silicide equilibrium core with fuel meat density of 3.55 gU cm -3 is an optimal core for RSG-GAS reactor and it can significantly increase the operation cycle length from 25 to 32 full power days. Nevertheless, the subcriticality of the shutdown core and the shutdown margin are lower than of the oxide core. Therefore, the deviation of subcriticality condition in the higher silicide core caused by the fuel loading and shuffling error should be reanalysed. The objective of this work is to analyse the sufficiency of the subcriticality condition of the shutdown core to face the worst condition caused by an error during loading and shuffling operations. The calculations were carried out using the 2-dimensional multigroup neutron diffusion code of Batan-FUEL. In the fuel handling error, the calculated results showed that the subcriticality condition of the shutdown higher density silicide equilibrium core of RSG-GAS can be maintained. Therefore, all fuel management steps are fixed in the present reactor operation manual can be applied in the higher silicide equilibrium core of RSG-GAS reactor. (author)

Kinetics of low pressure chemical vapor deposition of tungsten silicide from dichlorocilane reduction of tungsten hexafluoride

International Nuclear Information System (INIS)

Srinivas, D.; Raupp, G.B.; Hillman, J.

1990-01-01

The authors report on experiments to determine the intrinsic surface reaction rate dependences and film properties' dependence on local reactant partial pressures and wafer temperature in low pressure chemical vapor deposition (LPCVD) of tungsten silicide from dichlorosilane reduction of tungsten hexafluoride. Films were deposited in a commercial-scale Spectrum CVD cold wall single wafer reactor under near differential, gradientless conditions. Over the range of process conditions investigated, deposition rate was found to be first order in dichlorosillane and negative second order in tungsten hexafluoride partial pressure. The apparent activation energy in the surface reaction limited regime was found to be 70-120 kcal/mol. The silicon to tungsten ratio of as deposited silicide films ranged from 1.1 to 2.4, and increased with increasing temperature and dichlorosillane partial pressure, and decreased with increasing tungsten hexafluoride pressure. These results suggest that the apparent silicide deposition rate and composition are controlled by the relative rates of at least two competing reactions which deposit stoichiometric tungsten silicides and/or silicon

Extraction of zirconium and hafnium thiocyanates by CH3COCH2CH.(CH3)2-HSCN solvent from chloride medium

International Nuclear Information System (INIS)

Okada, A.T.

1982-01-01

A zirconium-hafnium separation process for application in nuclear industry is presented. The extraction of zirconium and hafnium thiocyanates in chloride medium by hexone-HSCN solvent was studied. The extraction process was developed, varying the parameters, such as, concentrations of the metals, the thiocyanate ion, the sulphate ion and free acidity in aqueous phase. (Author) [pt

Tungsten silicide contacts to polycrystalline silicon and silicon-germanium alloys

International Nuclear Information System (INIS)

Srinivasan, G.; Bain, M.F.; Bhattacharyya, S.; Baine, P.; Armstrong, B.M.; Gamble, H.S.; McNeill, D.W.

2004-01-01

Silicon-germanium alloy layers will be employed in the source-drain engineering of future MOS transistors. The use of this technology offers advantages in reducing series resistance and decreasing junction depth resulting in reduction in punch-through and SCE problems. The contact resistance of metal or metal silicides to the raised source-drain material is a serious issue at sub-micron dimensions and must be minimised. In this work, tungsten silicide produced by chemical vapour deposition has been investigated as a contact metallization scheme to both boron and phosphorus doped polycrystalline Si 1- x Ge x , with 0 ≤x ≤ 0.3. Cross bridge Kelvin resistor (CKBR) structures were fabricated incorporating CVD WSi 2 and polycrystalline SiGe. Tungsten silicide contacts to control polysilicon CKBR structures have been shown to be of high quality with specific contact resistance ρ c values 3 x 10 -7 ohm cm 2 and 6 x 10 -7 ohm cm 2 obtained to boron and phosphorus implanted samples respectively. The SiGe CKBR structures show that the inclusion of Ge yields a reduction in ρ c for both dopant types. The boron doped SiGe exhibits a reduction in ρ c from 3 x 10 -7 to 5 x 10 -8 ohm cm 2 as Ge fraction is increased from 0 to 0.3. The reduction in ρ c has been shown to be due to (i) the lowering of the tungsten silicide Schottky barrier height to p-type SiGe resulting from the energy band gap reduction, and (ii) increased activation of the implanted boron with increased Ge fraction. The phosphorus implanted samples show less sensitivity of ρ c to Ge fraction with a lowest value in this work of 3 x 10 -7 ohm cm 2 for a Ge fraction of 0.3. The reduction in specific contact resistance to the phosphorus implanted samples has been shown to be due to increased dopant activation alone

Separation process of zirconium and hafnium

International Nuclear Information System (INIS)

Hure, J.; Saint-James, R.

1955-01-01

About the separation different processes of zirconium-hafnium, the extraction by solvent in cross-current is the most easily the process usable on an industrial scale. It uses tributyl phosphate as solvent, diluted with white spirit to facilitate the decanting. Some exploratory tests showed that nitric environment seemed the most favorable for extraction; but a lot of other factors intervene in the separation process. We studied the influence of the acidity successively, the NO 3 - ions concentration, the role of the cation coming with NO 3 - , as well as the influence of the concentration of zirconium in the solution on the separation coefficient β = α Zr / α Hf . (M.B.) [fr

Formation of copper silicides by high dose metal vapor vacuum arc ion implantation

International Nuclear Information System (INIS)

Rong Chun; Zhang Jizhong; Li Wenzhi

2003-01-01

Si(1 1 1) was implanted by copper ions with different doses and copper distribution in silicon matrix was obtained. The as-implanted samples were annealed at 300 and 540 deg. C, respectively. Formation of copper silicides in as-implanted and annealed samples were studied. Thermodynamics and kinetics of the reaction were found to be different from reaction at copper-silicon interface that was applied in conventional studies of copper-silicon interaction. The defects in silicon induced by implantation and formation of copper silicides were recognized by Si(2 2 2) X-ray diffraction (XRD)

High temperature structural silicides

International Nuclear Information System (INIS)

Petrovic, J.J.

1997-01-01

Structural silicides have important high temperature applications in oxidizing and aggressive environments. Most prominent are MoSi 2 -based materials, which are borderline ceramic-intermetallic compounds. MoSi 2 single crystals exhibit macroscopic compressive ductility at temperatures below room temperature in some orientations. Polycrystalline MoSi 2 possesses elevated temperature creep behavior which is highly sensitive to grain size. MoSi 2 -Si 3 N 4 composites show an important combination of oxidation resistance, creep resistance, and low temperature fracture toughness. Current potential applications of MoSi 2 -based materials include furnace heating elements, molten metal lances, industrial gas burners, aerospace turbine engine components, diesel engine glow plugs, and materials for glass processing

Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon

International Nuclear Information System (INIS)

Escobedo-Cousin, Enrique; Vassilevski, Konstantin; Hopf, Toby; Wright, Nick; O'Neill, Anthony; Horsfall, Alton; Goss, Jonathan; Cumpson, Peter

2013-01-01

Patterned few-layer graphene (FLG) films were obtained by local solid phase growth from nickel silicide supersaturated with carbon, following a fabrication scheme, which allows the formation of self-aligned ohmic contacts on FLG and is compatible with conventional SiC device processing methods. The process was realised by the deposition and patterning of thin Ni films on semi-insulating 6H-SiC wafers followed by annealing and the selective removal of the resulting nickel silicide by wet chemistry. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) were used to confirm both the formation and subsequent removal of nickel silicide. The impact of process parameters such as the thickness of the initial Ni layer, annealing temperature, and cooling rates on the FLG films was assessed by Raman spectroscopy, XPS, and atomic force microscopy. The thickness of the final FLG film estimated from the Raman spectra varied from 1 to 4 monolayers for initial Ni layers between 3 and 20 nm thick. Self-aligned contacts were formed on these patterned films by contact photolithography and wet etching of nickel silicide, which enabled the fabrication of test structures to measure the carrier concentration and mobility in the FLG films. A simple model of diffusion-driven solid phase chemical reaction was used to explain formation of the FLG film at the interface between nickel silicide and silicon carbide.

Behavior of silicon in nitric media. Application to uranium silicides fuels reprocessing

International Nuclear Information System (INIS)

Cheroux, L.

2001-01-01

Uranium silicides are used in some research reactors. Reprocessing them is a solution for their cycle end. A list of reprocessing scenarios has been set the most realistic being a nitric dissolution close to the classic spent fuel reprocessing. This uranium silicide fuel contains a lot of silicon and few things are known about polymerization of silicic acid in concentrated nitric acid. The study of this polymerization allows to point out the main parameters: acidity, temperature, silicon concentration. The presence of aluminum seems to speed up heavily the polymerization. It has been impossible to find an analytical technique smart and fast enough to characterize the first steps of silicic acid polymerization. However the action of silicic species on emulsions stabilization formed by mixing them with an organic phase containing TBP has been studied, Silicon slows down the phase separation by means of oligomeric species forming complex with TBP. The existence of these intermediate species is short and heating can avoid any stabilization. When non irradiated uranium silicide fuel is attacked by a nitric solution, aluminum and uranium are quickly dissolved whereas silicon mainly stands in solid state. That builds a gangue of hydrated silica around the uranium silicide particulates without preventing uranium dissolution. A small part of silicon passes into the solution and polymerize towards the highly poly-condensed forms, just 2% of initial silicon is still in molecular form at the end of the dissolution. A thermal treatment of the fuel element, by forming inter-metallic phases U-Al-Si, allows the whole silicon to pass into the solution and next to precipitate. The behavior of silicon in spent fuels should be between these two situations. (author)

Information for irradiation and post-irradiation of the silicide fuel element prototype P-07

International Nuclear Information System (INIS)

Abbate, Maximo J.; Sbaffoni, Maria M.

2003-01-01

Included in the 'Silicides' Project, developed by the Nuclear Fuels Department of the National Atomic Energy Commission (CNEA), it is foreseen the qualification of this type of fuel for research reactors in order to be used in the Argentine RA-3 reactor and to confirm the CNEA as an international supplier. The paper presents basic information on several parameters corresponding to the new silicide prototype, called P-07, to be taken into account for its irradiation, postirradiation and qualification. (author)

Synthesis and characterization of hafnium oxide films for thermo and photoluminescence applications

International Nuclear Information System (INIS)

Guzman Mendoza, J.; Aguilar Frutis, M.A.; Flores, G. Alarcon; Garcia Hipolito, M.; Maciel Cerda, A.; Azorin Nieto, J.; Rivera Montalvo, T.; Falcony, C.

2010-01-01

Hafnium oxide (HfO 2 ) films were deposited by the ultrasonic spray pyrolysis process. The films were synthesized from hafnium chloride as raw material in deionized water as solvent and were deposited on corning glass substrates at temperatures from 300 to 600 deg. C. For substrate temperatures lower than 400 deg. C the deposited films were amorphous, while for substrate temperatures higher than 450 deg. C, the monoclinic phase of HfO 2 appeared. Scanning electron microscopy showed that the film's surface resulted rough with semi-spherical promontories. The films showed a chemical composition close to HfO 2 , with an Hf/O ratio of about 0.5. UV radiation was used in order to achieve the thermoluminescent characterization of the films; the 240 nm wavelength induced the best response. In addition, preliminary photoluminescence spectra, as a function of the deposition temperatures, are shown.

Formation of (Nd,Y)-silicides by sequential channeled implantation of Y and Nd ions

International Nuclear Information System (INIS)

Jin, S.; Bender, H.; Wu, M.F.; Vantomme, A.; Langouche, G.

2000-01-01

A buried hexagonal Nd 0.32 Y 0.68 Si 1.7 layer is formed by a sequential implantation of Y and Nd ions into (1 1 1)-oriented silicon wafers. The orientation relationship between the epitaxial Nd 0.32 Y 0.68 Si 1.7 and the silicon is (0 0 0 1) Nd 0.32 Y 0.68 Si 1.7 //(1 1 1) Si with Nd 0.32 Y 0.68 Si 1.7 // Si . High temperature annealing (1000 deg. C) results in a gradual transition into an orthorhombic ternary (Nd,Y)-silicide. Between the orthorhombic (Nd,Y)-silicide and the Si a preferential orientation relationship exists: (1 1 0) orth //(1 1(bar) 0) Si with orth // Si . However, as not all orthorhombic silicide grains follow this epitaxial relationship, the minimum yield in the Rutherford backscattering spectrometry (RBS) spectrum increases compared to the results after a low temperature annealing

Formation of (Nd,Y)-silicides by sequential channeled implantation of Y and Nd ions

Science.gov (United States)

Jin, S.; Bender, H.; Wu, M. F.; Vantomme, A.; Langouche, G.

2000-03-01

A buried hexagonal Nd0.32Y0.68Si1.7 layer is formed by a sequential implantation of Y and Nd ions into (1 1 1)-oriented silicon wafers. The orientation relationship between the epitaxial Nd0.32Y0.68Si1.7 and the silicon is (0 0 0 1)Nd0.32Y0.68Si1.7//(1 1 1)Si with Nd0.32Y0.68Si1.7//Si. High temperature annealing (1000°C) results in a gradual transition into an orthorhombic ternary (Nd,Y)-silicide. Between the orthorhombic (Nd,Y)-silicide and the Si a preferential orientation relationship exists: (1 1 0)orth//(1 1¯ 0)Si with orth//Si. However, as not all orthorhombic silicide grains follow this epitaxial relationship, the minimum yield in the Rutherford backscattering spectrometry (RBS) spectrum increases compared to the results after a low temperature annealing.

Fracture of niobium-base silicide coated alloy

International Nuclear Information System (INIS)

Davydova, A.D.; Zotov, Yu.P.; Ivashchenko, O.V.; Kushnareva, N.P.; Yarosh, I.P.

1990-01-01

Mechanical properties and character of fracture of Nb-W-Mo-Zr-C alloy composition with complex by composition and structure silicide coating under different states of stage-by-stage coating are studied. Structural features, character of fracture from ductile to quasibrittle transcrystalline one and, respectively, the composition plasticity level are defined by interrelation of fracture processes in coating, matrix plastic flow and possibility and way of stress relaxation on their boundary

A study of a production process for hafnium-free zirconium from zircon

International Nuclear Information System (INIS)

Ratanalert, N.

1985-01-01

The purpose of this experiment was to extract and purify the zirconium from zircon. The effects of time of extraction and stripping of zirconium, concentration of feed solution, concentration of hydrochloric acid in stripping process, equilibrium curve of extraction of zirconium and hafnium and equilibrium curve of stripping zirconium or scrubbing hafnium were studied from standard zirconium and hafnium. The results, subsequently were applied to the extraction procedures for zirconium from zircon. Minus 100 mesh zircon was fused with sodium hydroxide in the ratio of 1 : 6 at 700 degree C for l hour. After fusion the zirconate was leached with water and dissolved in hot concentrated hydrochloric acid. Zirconyl chloride octahydrate crystallized out when the solution was cooled. An agueons solution of zirconyl chloride was used as the feed to the hexone - thiocyanate solvent extraction process. This was prepared by dissolving zirconyl chloride octahydrate crystal in waster. This zirconium feed solution in 1 M HCl and 1 M N H 4 CNS was extracted with 2.7 m N H 4 CNS in hexone and then stripped with 3.6 M HCl the aqueous phase was got rid of thiocyanate ion by extracting with pure hexone, then the zirconium in aqueous phase was precipitated with sulfuric acid and ammonium hydroxide at pH 1.8 - 2.0 and zirconium oxide was obtained by ignition at 700 degree C. The process could be modified to improve the purity of zirconium by using cation exchange resin to get rid of thiocyanate ion after solvent extraction process

Composites having an intermetallic containing matrix

International Nuclear Information System (INIS)

Nagle, D.C.; Brupbacher, J.M.; Christodoulou, L.

1990-01-01

This paper describes a composite material. It comprises: a dispersion of in-situ precipitated second phase particles selected from the group consisting of borides, carbides, nitrides, and sulfides, in an intermetallic containing matrix selected from the group consisting of the aluminides, silicides, and beryllides of nickel, copper, titanium, cobalt, iron, platinum, gold, silver, niobium, tantalum, zinc, molybdenum, hafnium, tin, tungsten, lithium, magnesium, thorium, chromium, vanadium, zirconium, and manganese

Effect of Utilization of Silicide Fuel with the Density 4.8 gU/cc on the Kinetic Parameters of RSG-GAS Reactor

International Nuclear Information System (INIS)

Setiyanto; Sembiring, Tagor M.; Pinem, Surian

2007-01-01

Presently, the RSG-GAS reactor using silicide fuel element of 2.96 gU/cc. For increasing reactor operation time, its planning to change to higher density fuel. The kinetic calculation of silicide core with density 4.8 gU/cc has been carried out, since it has an influence on the reactor operation safety. The calculated kinetic parameters are the effective delayed neutron fraction, the delayed neutron decay constant, prompt neutron lifetime and feedback reactivity coefficient very important for reactor operation safety. the calculation is performed in 2-dimensional neutron diffusion-perturbation method using modified Batan-2DIFF code. The calculation showed that the effective delayed neutron fraction is 7. 03256x10 -03 , total delay neutron time constant is 7.85820x10 -02 s -1 and the prompt neutron lifetime is 55.4900 μs. The result of prompt neutron lifetime smaller 10 % compare with silicide fuel of 4.8 gU/cc. The calculated results showed that all of the feedback reactivity coefficient silicide core 4.8 gU/cc is negative. Totally, the feedback reactivity coefficient of silicide fuel of 4.8 gU/cc is 10% less than that of silicide fuel of 2.96 gU/cc. The results shown that kinetic parameters result decrease compared with the silicide core with density 2.96 gU/cc, but no significant influence in the RSG-GAS reactor operation. (author)

Vapor pressure, heat capacities, and phase transitions of tetrakis(tert-butoxy)hafnium

Czech Academy of Sciences Publication Activity Database

Fulem, Michal; Růžička, K.

2011-01-01

Roč. 311, Dec. (2011), s. 25-29 ISSN 0378-3812 Institutional research plan: CEZ:AV0Z10100521 Keywords : tetrakis(tert-butoxy)hafnium * MO precursor * vapor pressure * heat capacity * vaporization enthalpy * enthalpy of fusion Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.139, year: 2011

Solvent extraction studies of RERTR silicide fuels

International Nuclear Information System (INIS)

Gouge, Anthony P.

1983-01-01

Uranium silicide fuels, which are candidate RERTR fuel compositions, may require special considerations in solvent extraction reprocessing. Since Savannah River Plant may be reprocessing RERTR fuels as early as 1985, studies have been conducted at Savannah River Laboratory to demonstrate the solvent extraction behavior of this fuel. Results of solvent extraction studies with both unirradiated and irradiated fuel are presented along with the preliminary RERTR solvent extraction reprocessing flow sheet for Savannah River Plant. (author)

Phase transformations in Higher Manganese Silicides

Energy Technology Data Exchange (ETDEWEB)

Allam, A. [MADIREL, UMR 7246 CNRS - Universite Aix-Marseille, av Normandie-Niemen, 13397 Marseille Cedex 20 (France); IM2NP, UMR 7334 CNRS - Universite Aix-Marseille, av Normandie-Niemen, Case 142, 13397 Marseille Cedex 20 (France); Boulet, P. [MADIREL, UMR 7246 CNRS - Universite Aix-Marseille, av Normandie-Niemen, 13397 Marseille Cedex 20 (France); Nunes, C.A. [Departamento de Engenharia de Materiais (DEMAR), Escola de Engenharia de Lorena (EEL), Universidade de Sao Paulo - USP, Caixa Postal 116, 12600-970 Lorena, Sao Paulo (Brazil); Sopousek, J.; Broz, P. [Masaryk University, Faculty of Science, Department of Chemistry, Kolarska 2, 611 37 Brno (Czech Republic); Masaryk University, Central European Institute of Technology, CEITEC, Kamenice 753/5, 625 00 Brno (Czech Republic); Record, M.-C., E-mail: m-c.record@univ-cezanne.fr [IM2NP, UMR 7334 CNRS - Universite Aix-Marseille, av Normandie-Niemen, Case 142, 13397 Marseille Cedex 20 (France)

2013-02-25

Highlights: Black-Right-Pointing-Pointer The phase transitions of the Higher Manganese Silicides were investigated. Black-Right-Pointing-Pointer The samples were characterised by XRD, DTA and DSC. Black-Right-Pointing-Pointer Mn{sub 27}Si{sub 47} is the stable phase at room temperature and under atmospheric pressure. Black-Right-Pointing-Pointer At around 800 Degree-Sign C, Mn{sub 27}Si{sub 47} is transformed into Mn{sub 15}Si{sub 26}. Black-Right-Pointing-Pointer The phase transition is of a second order. - Abstract: This work is an investigation of the phase transformations of the Higher Manganese Silicides in the temperature range [100-1200 Degree-Sign C]. Several complementary experimental techniques were used, namely in situ X-ray Diffraction (XRD), Differential Thermal Analysis (DTA) and Differential Scanning Calorimetry (DSC). The evolution of both the lattice parameters and the thermal expansion coefficients was determined from in situ XRD measurements. The stability of the samples was investigated by thermal analysis (DTA) and Cp measurements (DSC). This study shows that Mn{sub 27}Si{sub 47} which is the stable phase at room temperature and under atmospheric pressure undergoes a phase transformation at around 800 Degree-Sign C. Mn{sub 27}Si{sub 47} is transformed into Mn{sub 15}Si{sub 26}. This phase transformation seems to be of a second order one. Indeed it was not evidenced by DTA and by contrast it appears on the Cp curve.

Pentamethylcyclopentadienyl Zirconium and Hafnium Polyhydride Complexes : Synthesis, Structure, and Reactivity

NARCIS (Netherlands)

Visser, Cindy; Hende, Johannes R. van den; Meetsma, Auke; Hessen, Bart; Teuben, Jan H.

2001-01-01

The half-sandwich zirconium and hafnium N,N-dimethylaminopropyl complexes Cp*M[(CH2)3NMe2]Cl2 (Cp* = η5-C5Me5, M = Zr, 1; Hf, 2) and Cp*M[(CH2)3NMe2]2Cl (M = Zr, 3; Hf, 4) were synthesized by mono- or dialkylation of Cp*MCl3 with the corresponding alkyllithium and Grignard reagents. Hydrogenolysis

The electronic structure of 4d and 5d silicides

NARCIS (Netherlands)

Speier, W.; Kumar, L.; Sarma, D.D.; Groot, R.A. de; Fuggle, J.C.

1989-01-01

A systematic experimental and theoretical study of the electronic structure of stoichiometric silicides with Nb, Mo, Ta and W is presented. We have employed x-ray photoemission and bremsstrahlung isochromat spectroscopy as experimental techniques and interpreted the measured data by calculation of

Babcock and Wilcox plate fabrication experience with uranium silicide spherical fuel

International Nuclear Information System (INIS)

Todd, Lawrence E.; Pace, Brett W.

1996-01-01

This report is written to present the fuel fabrication experience of Babcock and Wilcox using atomized spherical uranium silicide powder. The intent is to demonstrate the ability to fabricate fuel plates using spherical powder and to provide useful information proceeding into the next phase of work using this type of fuel. The limited quantity of resources- spherical powder and time, did not allow for much process optimizing in this work scope. However, the information contained within provides optimism for the future of spherical uranium silicide fuel plate fabrication at Babcock and Wilcox.The success of assembling fuel elements with spherical powder will enable Babcock and Wilcox to reduce overall costs to its customers while still maintaining our reputation for providing high quality research and test reactor products. (author)

Properties of neutron-rich hafnium high-spin isomers

CERN Multimedia

Tungate, G; Walker, P M; Neyens, G; Billowes, J; Flanagan, K; Koester, U H; Litvinov, Y

It is proposed to study highly-excited multi-quasiparticle isomers in neutron-rich hafnium (Z=72) isotopes. Long half-lives have already been measured for such isomers in the storage ring at GSI, ensuring their accessibility with ISOL production. The present proposal focuses on:\\\\ (i) an on-line experiment to measure isomer properties in $^{183}$Hf and $^{184}$Hf, and\\\\ (ii) an off-line molecular breakup test using REXTRAP, to provide Hf$^{+}$ beams for future laser spectroscopy and greater sensitivity for the future study of more neutron-rich isotopes.

Silicon-germanium and platinum silicide nanostructures for silicon based photonics

Science.gov (United States)

Storozhevykh, M. S.; Dubkov, V. P.; Arapkina, L. V.; Chizh, K. V.; Mironov, S. A.; Chapnin, V. A.; Yuryev, V. A.

2017-05-01

This paper reports a study of two types of silicon based nanostructures prospective for applications in photonics. The first ones are Ge/Si(001) structures forming at room temperature and reconstructing after annealing at 600°C. Germanium, being deposited from a molecular beam at room temperature on the Si(001) surface, forms a thin granular film composed of Ge particles with sizes of a few nanometers. A characteristic feature of these films is that they demonstrate signs of the 2 x 1 structure in their RHEED patterns. After short-term annealing at 600°C under the closed system conditions, the granular films reconstruct to heterostructures consisting of a Ge wetting layer and oval clusters of Ge. A mixed type c(4x2) + p(2x2) reconstruction typical to the low-temperature MBE (Tgr Ge. The other type of the studied nanostructures is based on Pt silicides. This class of materials is one of the friendliest to silicon technology. But as silicide film thickness reaches a few nanometers, low resistivity becomes of primary importance. Pt3Si has the lowest sheet resistance among the Pt silicides. However, the development of a process of thin Pt3Si films formation is a challenging task. This paper describes formation of a thin Pt3Si/Pt2Si structures at room temperature on poly-Si films. Special attention is paid upon formation of poly-Si and amorphous Si films on Si3N4 substrates at low temperatures.

Mechanochemical synthesis and spark plasma sintering of the cerium silicides

Energy Technology Data Exchange (ETDEWEB)

Alanko, Gordon A.; Jaques, Brian; Bateman, Allyssa [Department of Materials Science and Engineering, College of Engineering, Boise State University, 1910 University Drive, Boise, ID 83725 (United States); Butt, Darryl P., E-mail: darrylbutt@boisestate.edu [Department of Materials Science and Engineering, College of Engineering, Boise State University, 1910 University Drive, Boise, ID 83725 (United States); Center for Advanced Energy Studies, 995 University Boulevard, Idaho Falls, ID 83401 (United States)

2014-12-15

Highlights: • Ce{sub 5}Si{sub 3}, Ce{sub 3}Si{sub 2}, CeSi, CeSi{sub 2−x} and CeSi{sub 2} were mechanochemically synthesized. • Temperature and pressure were monitored to investigate reaction progress. • All syntheses proceeded through a MSR event followed by rapid solid-state diffusion. • Milling time before MSR correlates well with effective heat of formation. • Some synthesized material was densified by spark plasma sintering. - Abstract: The cerium silicides, Ce{sub 5}Si{sub 3}, Ce{sub 3}Si{sub 2}, CeSi, CeSi{sub 2−y}, and CeSi{sub 2−x}, have been prepared from the elements by mechanochemical processing in a planetary ball mill. Preparation of the cerium silicide Ce{sub 5}Si{sub 4} was unsuccessfully attempted and potential reasons for this are discussed. Temperature and pressure of the milling vial were monitored in situ to gain insight into the mechanochemical reaction kinetics, which include a mechanically-induced self-propagating reaction (MSR). Some prepared powders were consolidated by spark plasma sintering to high density. Starting materials, as-milled powders, and consolidated samples were characterized by X-ray diffraction, scanning electron microscopy, and energy dispersive spectroscopy. The results obtained help elucidate key questions in mechanochemical processing of intermetallics, showing first phase formation similar to thin films, MSR ignition times that are composition- and milling speed-dependent, and sensitivity of stable compound formation on the impact pressure. The results demonstrate mechanochemical synthesis as a viable technique for rare earth silicides.

Towards the improvement of the oxidation resistance of Nb-silicides in situ composites: A solid state diffusion approach

International Nuclear Information System (INIS)

Mathieu, S.; Knittel, S.; François, M.; Portebois, L.; Mathieu, S.; Vilasi, M.

2014-01-01

Highlights: •Local equilibrium is attained during oxidation at phase boundaries (steady state conditions). •A solid state diffusion model explains the oxidation mechanism of Nb-silicides composites. •The Nb ss fraction is not the only parameters governing the oxidation rate of Nb-silicides. •Aluminium increases the thermodynamic activity of Si in the Nb-silicides composites. •The results indicate the need to develop a Nb–Ti–Hf–Al–Cr–Si thermodynamic database. -- Abstract: The present study focuses on the oxidation mechanism of Nb-silicide composites and on the effect of the composition on the oxidation rate at 1100 °C. A theoretical approach is proposed based on experimental results and used to optimise the oxidation resistance. The growth model based on multiphase diffusion was experimentally tested and confirmed by manufacturing seven composites with different compositions. It was also found that the effect of the composition has to be evaluated at 1100 °C within a short time duration (50 h), where the oxide scale and the internal oxidation zone both grow according to parabolic kinetics

Quantitative EPMA of Nano-Phase Iron-Silicides in Apollo 16 Lunar Regolith

Science.gov (United States)

Gopon, P.; Fournelle, J.; Valley, J. W.; Pinard, P. T.; Sobol, P.; Horn, W.; Spicuzza, M.; Llovet, X.; Richter, S.

2013-12-01

Until recently, quantitative EPMA of phases under a few microns in size has been extremely difficult. In order to achieve analytical volumes to analyze sub-micron features, accelerating voltages between 5 and 8 keV need to be used. At these voltages the normally used K X-ray transitions (of higher Z elements) are no longer excited, and we must rely of outer shell transitions (L and M). These outer shell transitions are difficult to use for quantitative EPMA because they are strongly affected by different bonding environments, the error associated with their mass attenuation coefficients (MAC), and their proximity to absorption edges. These problems are especially prevalent for the transition metals, because of the unfilled M5 electron shell where the Lα transition originates. Previous studies have tried to overcome these limitations by using standards that almost exactly matched their unknowns. This, however, is cumbersome and requires accurate knowledge of the composition of your sample beforehand, as well as an exorbitant number of well characterized standards. Using a 5 keV electron beam and utilizing non-standard X-ray transitions (Ll) for the transition metals, we are able to conduct accurate quantitative analyses of phases down to ~300nm. The Ll transition in the transition metals behaves more like a core-state transition, and unlike the Lα/β lines, is unaffected by bonding effects and does not lie near an absorption edge. This allows for quantitative analysis using standards do not have to exactly match the unknown. In our case pure metal standards were used for all elements except phosphorus. We present here data on iron-silicides in two Apollo 16 regolith grains. These plagioclase grains (A6-7 and A6-8) were collected between North and South Ray Craters, in the lunar highlands, and thus are associated with one or more large impact events. We report the presence of carbon, nickel, and phosphorus (in order of abundance) in these iron-silicide phases

Immobilization of Uranium Silicide in Sintered Iron-Phosphate Glass

International Nuclear Information System (INIS)

Mateos, Patricia; Russo, Diego; Rodriguez, Diego; Heredia, A; Sanfilippo, M.; Sterba, Mario

2003-01-01

This work is a continuation of a previous one performed in vitrification of uranium silicide in borosilicate and iron-silicate glasses, by sintering.We present the results obtained with an iron-phosphate glass developed at our laboratory and we compare this results with those obtained with the above mentioned glasses. The main objective was to develop a method as simple as possible, so as to get a monolithic glass block with the appropriate properties to be disposed in a deep geological repository.The thermal transformation of the uranium silicide was characterized by DTA/TG analysis and X-ray diffraction.We determined the evolution of the crystalline phases and the change in weight.Calcined uranium silicide was mixed with natural U 3 O 8 , the amount of U 3 O 8 was calculated to simulate an isotopic dilution of 4%.This material was mixed with powdered iron-phosphate glass (in wt.%: 64,9 P 2 O 5 ; 22,7 Fe 2 O 3 ; 8,1 Al 2 O 3 ; 4,3 Na 2 O) in different proportions (in wt%): 7%, 10% y 15%.The powders were pressed and sintered at temperatures between 585 y 670 °C. Samples of the sintered pellet were prepared for the lixiviation tests (MCC-1P: monolithic samples; deionised water; 90° C; 7, 14 and 28 days).The samples showed a quite good durability (0,6 g.m -2 .day -1 ), similar to borosilicate glasses.The microstructure of the glass samples showed that the uranium particles are much better integrated to the glass matrix in the iron-phosphate glasses than in the borosilicate or iron-silicate glasses.We can conclude that the sintered product obtained could be a good alternative for the immobilization of nuclear wastes with high content of uranium, as the ones arising from the conditioning of research reactors spent fuels

The formation of magnetic silicide Fe3Si clusters during ion implantation

Science.gov (United States)

Balakirev, N.; Zhikharev, V.; Gumarov, G.

2014-05-01

A simple two-dimensional model of the formation of magnetic silicide Fe3Si clusters during high-dose Fe ion implantation into silicon has been proposed and the cluster growth process has been computer simulated. The model takes into account the interaction between the cluster magnetization and magnetic moments of Fe atoms random walking in the implanted layer. If the clusters are formed in the presence of the external magnetic field parallel to the implanted layer, the model predicts the elongation of the growing cluster in the field direction. It has been proposed that the cluster elongation results in the uniaxial magnetic anisotropy in the plane of the implanted layer, which is observed in iron silicide films ion-beam synthesized in the external magnetic field.

The formation of magnetic silicide Fe3Si clusters during ion implantation

International Nuclear Information System (INIS)

Balakirev, N.; Zhikharev, V.; Gumarov, G.

2014-01-01

A simple two-dimensional model of the formation of magnetic silicide Fe 3 Si clusters during high-dose Fe ion implantation into silicon has been proposed and the cluster growth process has been computer simulated. The model takes into account the interaction between the cluster magnetization and magnetic moments of Fe atoms random walking in the implanted layer. If the clusters are formed in the presence of the external magnetic field parallel to the implanted layer, the model predicts the elongation of the growing cluster in the field direction. It has been proposed that the cluster elongation results in the uniaxial magnetic anisotropy in the plane of the implanted layer, which is observed in iron silicide films ion-beam synthesized in the external magnetic field

Phase analyses of silicide or nitride coated U–Mo and U–Mo–Ti particle dispersion fuel after out-of-pile annealing

Energy Technology Data Exchange (ETDEWEB)

Kim, Woo Jeong [Korea Atomic Energy Research Institute, 989-111 Daedeok-daero, Yuseong, Daejeon 305-353 (Korea, Republic of); Palancher, Hervé [CEA, DEN, DEC, F-13108 Saint Paul Lez Durance Cedex (France); Ryu, Ho Jin, E-mail: hojinryu@kaist.ac.kr [Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong, Daejeon 305-701 (Korea, Republic of); Park, Jong Man; Nam, Ji Min [Korea Atomic Energy Research Institute, 989-111 Daedeok-daero, Yuseong, Daejeon 305-353 (Korea, Republic of); Bonnin, Anne [CEA, DEN, DEC, F-13108 Saint Paul Lez Durance Cedex (France); ESRF, 6, rue J. Horowitz, F-38000 Grenoble Cedex (France); Honkimäki, Veijo [ESRF, 6, rue J. Horowitz, F-38000 Grenoble Cedex (France); Charollais, François [CEA, DEN, DEC, F-13108 Saint Paul Lez Durance Cedex (France); Lemoine, Patrick [CEA, DEN, DISN, 91191 Gif sur Yvette (France)

2014-03-15

Highlights: • Silicide or nitride layers were coated on atomized U–Mo or U–Mo–Ti powder. • The constituent phases after annealing were identified through high-energy XRD. • U{sub 3}Si{sub 5} and U{sub 4}Mo(Mo{sub x}Si{sub 1−x})Si{sub 2} were identified in the silicide coating layers. • UN was identified for U–Mo particles and UN and U{sub 4}N{sub 7} formed on U–Mo–Ti particles. -- Abstract: The coating of silicide or nitride layers on U–7 wt%Mo or U–7 wt%Mo–1 wt%Ti particles has been proposed for the minimization of the interaction phase growth in U–Mo/Al dispersion fuel during irradiation. Out-of-pile annealing tests show reduced inter-diffusion by forming silicide or nitride protective layers on U–Mo and U–Mo–Ti particles. To characterize the constituent phases of the coated layers on U–Mo and U–Mo–Ti particles and the interaction phases of coated U–Mo and U–Mo–Ti particle dispersed Al matrix fuel, synchrotron X-ray diffraction experiments have been performed. It was identified that silicide coating layers consisted mainly of U{sub 3}Si{sub 5} and U{sub 4}Mo(Mo{sub x}Si{sub 1−x})Si{sub 2}, and nitride coating layers were composed of mainly UN and U{sub 4}N{sub 7}. The interaction phases obtained after annealing of coated U–Mo and U–Mo–Ti particle dispersion samples were identical to those found in U–Mo/Al–Si and U–Mo/Al systems. Nitride-coated particles showed less interaction formation than silicide-coated particles after annealing at 580 °C for 1 h owing to the higher susceptibility to breakage of the silicide coating layers during hot extrusion.

Ion-bombardment-induced reduction in vacancies and its enhanced effect on conductivity and reflectivity in hafnium nitride films

Energy Technology Data Exchange (ETDEWEB)

Gu, Zhiqing; Wang, Jiafu; Hu, Chaoquan; Zhang, Xiaobo; Dang, Jianchen; Gao, Jing; Zheng, Weitao [Jilin University, School of Materials Science and Engineering, Key Laboratory of Mobile Materials, MOE, and State Key Laboratory of Superhard Materials, Changchun (China); Zhang, Sam [Nanyang Technological University, School of Mechanical and Aerospace Engineering, Singapore (Singapore); Wang, Xiaoyi [Chinese Academy of Sciences, Key Laboratory of Optical System Advanced Manufacturing Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Changchun (China); Chen, Hong [Jilin University, Department of Control Science and Engineering, Changchun (China)

2016-08-15

Although the role of ion bombardment on electrical conductivity and optical reflectivity of transition metal nitrides films was reported previously, the results were controversial and the mechanism was not yet well explored. Here, we show that proper ion bombardment, induced by applying the negative bias voltage (V{sub b}), significantly improves the electrical conductivity and optical reflectivity in rocksalt hafnium nitride films regardless of level of stoichiometry (i.e., in both near-stoichiometric HfN{sub 1.04} and over-stoichiometric HfN{sub 1.17} films). The observed improvement arises from the increase in the concentration of free electrons and the relaxation time as a result of reduction in nitrogen and hafnium vacancies in the films. Furthermore, HfN{sub 1.17} films have always much lower electrical conductivity and infrared reflectance than HfN{sub 1.04} films for a given V{sub b}, owing to more hafnium vacancies because of larger composition deviation from HfN exact stoichiometry (N:Hf = 1:1). These new insights are supported by good agreement between experimental results and theoretical calculations. (orig.)

Optical anisotropy of quasi-1D rare-earth silicide nanostructures on Si(001)

Energy Technology Data Exchange (ETDEWEB)

Chandola, S., E-mail: sandhya.chandola@isas.de [Leibniz-Institut für Analytische Wissenschaften – ISAS – e.V., Schwarzschildstraße 8, 12489 Berlin (Germany); Speiser, E.; Esser, N. [Leibniz-Institut für Analytische Wissenschaften – ISAS – e.V., Schwarzschildstraße 8, 12489 Berlin (Germany); Appelfeller, S.; Franz, M.; Dähne, M. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin (Germany)

2017-03-31

Highlights: • Reflectance anisotropy spectroscopy (RAS) is capable of distinguishing optically between the semiconducting wetting layer and the metallic nanowires of rare earth (Tb and Dy) silicide nanostructures grown on vicinal Si(001). • The spectra of the wetting layer show a distinctive line shape with a large peak appearing at 3.8 eV, which is assigned to the formation of 2 × 3 and 2 × 4-like subunits of the 2 × 7 reconstruction. The spectra of the metallic nanowires show peaks at the E{sub 1} and E{sub 2} transitions of bulk Si which is assigned to strong substrate strain induced by the nanowires. • The optical anisotropy of the Tb nanowires is larger than for the Dy nanowires, which is related to the preferential formation of more strained bundles as well as larger areas of clean Si surfaces in the case of Tb. • RAS is shown to be a powerful addition to surface science techniques for studying the formation of rare-earth silicide nanostructures. Its surface sensitivity and rapidity of response make it an ideal complement to the slower but higher resolution of scanning probes of STM and AFM. - Abstract: Rare earth metals are known to interact strongly with Si(001) surfaces to form different types of silicide nanostructures. Using STM to structurally characterize Dy and Tb silicide nanostructures on vicinal Si(001), it will be shown that reflectance anisotropy spectroscopy (RAS) can be used as an optical fingerprint technique to clearly distinguish between the formation of a semiconducting two-dimensional wetting layer and the metallic one-dimensional nanowires. Moreover, the distinctive spectral features can be related to structural units of the nanostructures. RAS spectra of Tb and Dy nanostructures are found to show similar features.

Cross-Bridge Kelvin Resistor (CBKR) structures for silicide-semiconductor junctions characterization

NARCIS (Netherlands)

Stavitski, N.; van Dal, M.J.H.; Klootwijk, J.H.; Wolters, Robertus A.M.; Kovalgin, Alexeij Y.; Schmitz, Jurriaan

2006-01-01

Analyzing the contact geometry factors for the conventional CBKR structures, it appeared that the contact geometries conventionally used for the metal-to-silicide contact resistance measurements were not always satisfactory to reveal the specific contact resistance values. To investigate these

Results for heterogeneous poisoning of the critical HTR-test facility KAHTER using absorber elements containing hafnium and boron

International Nuclear Information System (INIS)

Drueke, V.; Filges, D.; Nabi, R.; Neef, R.D.; Paul, N.; Schaal, H.

1979-10-01

Experiments and checking computations for investigating the initial-core poisoning of the pebble bed high temperature reactor are described. Following the example of the THTR-300, THTR absorber elements poisoned with hafnium/boron were added to the THTR fuel- and graphite elements of the KAHTER core. Three different hafnium-boron poisoned core loadings, corresponding to 2.7, 5.3 and 8% reactivity compensation, were used in the experiments. For purposes of comparison, two cores exclusively boron poisoned were also studied. The poisoning of these cores correspond to 2.7 and 8% reactivity compensation. The experiments and checking computations should serve to test the accuracy of the theoretical models and data sets in modeling the reactivity effects of absorber poisoned elements in the THTR. In particular, the applicability of the nuclear data of hafnium and the treatment of resonance calculations should be verified. In addition, to determining critical masses and ksub(eff), special emphasis was placed in the experiments on the exact determination of all reactivity effects. In some cases, repeated loading of a configuration also provided a measure of the reproducibility of ksub(eff). The experiments were checked computationally using the GAMTEREX code package and the program system RSYST. These two computation packages contain different data bases, - although the hafnium data are identical -, and the computing models differ in certain phases of the calculations. Both code systems compute ksub(eff) values to within the present accuracy requirements, whereas the program system RSYST gives better agreement with experimental measurements. (orig.) 891 RW/orig. 892 RDG [de

Synthesis of molybdenum borides and molybdenum silicides in molten salts and their oxidation behavior in an air-water mixture

NARCIS (Netherlands)

Kuznetsov, S.A.; Kuznetsova, S.V.; Rebrov, E.V.; Mies, M.J.M.; Croon, de M.H.J.M.; Schouten, J.C.

2005-01-01

The formation of various coatings in molybdenum-boron and molybdenum-silicon systems was investigated. Boronizing and siliciding treatments were conducted in molten salts under inert gas atm. in the 850-1050 DegC temp. range for 7 h. The presence of boride (e.g. Mo2B, MoB, Mo2B5) and silicide

Influence of impurities on silicide contact formation

International Nuclear Information System (INIS)

Kazdaev, Kh.R.; Meermanov, G.B.; Kazdaev, R.Kh.

2002-01-01

Research objectives of this work are to investigate the influence of light impurities implantation on peculiarities of the silicides formation in molybdenum monocrystal implanted by silicon, and in molybdenum films sputtered on silicon substrate at subsequent annealing. Implantation of the molybdenum samples was performed with silicon ions (90 keV, 5x10 17 cm -2 ). Phase identification was performed by X ray analysis with photographic method of registration. Analysis of the results has shown the formation of the molybdenum silicide Mo 3 Si at 900 deg. C. To find out the influence of impurities present in the atmosphere (C,N,O) on investigated processes we have applied combined implantation. At first, molybdenum was implanted with ions of the basic component (silicon) and then -- with impurities ions. Acceleration energies (40keV for C, 45 keV for N and 50 keV for O) were chosen to obtain the same distribution profiles for basic and impurities ions. Ion doses were 5x10 17 cm -2 for Si-ions and 5x10 16 cm -2 - for impurities. The most important results are reported here. The first, for all three kinds of impurities the decreased formation temperatures of the phase Mo 3 Si were observed; in the case of C and N it was ∼100 deg. and in the case of nitrogen - ∼200 deg. Further, simultaneously with the Mo 3 Si phase, the appearance of the rich-metal phase Mo 5 Si 3 was registered (not observed in the samples without additional implantation). In case of Mo/Si-structure, the implantation of the impurities (N,O) was performed to create the peak concentration (∼4at/%) located in the middle of the molybdenum film (∼ 150nm) deposited on silicon substrate. Investigation carried out on unimplanted samples showed the formation of the silicide molybdenum MoSi 2 , observed after annealing at temperatures 900/1000 deg. C, higher than values 500-600 deg. C reported in other works. It is discovered that electrical conductivity of Mo 5 Si 3 -films synthesized after impurities

Thermal behaviour of hafnium diethylenetriaminepentaacetate studied using the perturbed angular correlation technique

Energy Technology Data Exchange (ETDEWEB)

Chain, Cecilia Y. [Universidad Nacional de La Plata (Argentina). Dept. de Fisica; Consejo Nacional de Investigaciones Cientificas y Tecnicas (CONICET), La Plata (Argentina). IFLP-CCT; Consejo Nacional de Investigaciones Cientificas y Tecnicas, Buenos Aires (Argentina); Rivas, Patricia [Consejo Nacional de Investigaciones Cientificas y Tecnicas (CONICET), La Plata (Argentina). IFLP-CCT; Consejo Nacional de Investigaciones Cientificas y Tecnicas, Buenos Aires (Argentina); Universidad Nacional de La Plata (Argentina). Facultad de Ciencias Agrarias y Forestales; Pasquevich, Alberto F. [Universidad Nacional de La Plata (Argentina). Dept. de Fisica; Consejo Nacional de Investigaciones Cientificas y Tecnicas (CONICET), La Plata (Argentina). IFLP-CCT; Comision de Investigaciones Cientificas de la Provincia de Buenos Aires (CIC-PBA) (Argentina)

2014-07-01

Polyaminecarboxilic ligands like diethylenetriaminepentaacetic acid form stable complexes with many heavy metal ions, excelling as cation chelants especially in the field of radiopharmacy. The aim of this work is to characterize, by using the Time Differential Perturbed Angular Correlations (TDPAC) technique, the hyperfine interactions at hafnium sites in hafnium diethylenetriaminepentaacetate and to investigate their evolution as temperature increases. TDPAC results for KHfDTPA.3H{sub 2}O obtained by chemical synthesis yield a well defined and highly asymmetric interaction of quadrupole frequency ω{sub Q} = 141 Mrad/s, which is consistent with the existence of a unique site for the metal in the crystal lattice. The thermal behaviour of the chelate is investigated by means of differential scanning calorimetry and thermogravimetrical analyses revealing that an endothermic dehydration of KHfDTPA.3H{sub 2}O takes place in one step between 80 C and 180 C. The anhydrous KHfDTPA thus arising is characterized by a fully asymmetric and well defined interaction of quadrupole frequency ω{sub Q} = 168 Mrad/s. (orig.)

Thermal behaviour of hafnium diethylenetriaminepentaacetate studied using the perturbed angular correlation technique

International Nuclear Information System (INIS)

Chain, Cecilia Y.; Rivas, Patricia

2014-01-01

Polyaminecarboxilic ligands like diethylenetriaminepentaacetic acid form stable complexes with many heavy metal ions, excelling as cation chelants especially in the field of radiopharmacy. The aim of this work is to characterize, by using the Time Differential Perturbed Angular Correlations (TDPAC) technique, the hyperfine interactions at hafnium sites in hafnium diethylenetriaminepentaacetate and to investigate their evolution as temperature increases. TDPAC results for KHfDTPA.3H 2 O obtained by chemical synthesis yield a well defined and highly asymmetric interaction of quadrupole frequency ω Q = 141 Mrad/s, which is consistent with the existence of a unique site for the metal in the crystal lattice. The thermal behaviour of the chelate is investigated by means of differential scanning calorimetry and thermogravimetrical analyses revealing that an endothermic dehydration of KHfDTPA.3H 2 O takes place in one step between 80 C and 180 C. The anhydrous KHfDTPA thus arising is characterized by a fully asymmetric and well defined interaction of quadrupole frequency ω Q = 168 Mrad/s. (orig.)

Fuel cycle cost comparisons with oxide and silicide fuels

Energy Technology Data Exchange (ETDEWEB)

Matos, J E; Freese, K E [RERTR Program, Argonne National Laboratory (United States)

1983-09-01

This paper addresses fuel cycle cost comparisons for a generic 10 MW reactor with HEU aluminide fuel and with LEU oxide and silicide fuels in several fuel element geometries. The intention of this study is to provide a consistent assessment of various design options from a cost point of view. The status of the development and demonstration of the oxide and silicide fuels are presented in several papers in these proceedings. Routine utilization of these fuels with the uranium densities considered here requires that they are successfully demonstrated and licensed. Thermal-hydraulic safety margins, shutdown margins, mixed cores, and transient analyses are not addressed here, but analyses of these safety issues are in progress for a limited number of the most promising design options. Fuel cycle cost benefits could result if a number of reactors were to utilize fuel elements with the same number or different numbers of the same standard fuel plate. Data is presented to quantify these potential cost benefits. This analysis shows that there are a number of fuel element designs using LEU oxide or silicide fuels that have either the same or lower total fuel cycle costs than the HEU design. Use of these fuels with the uranium densities considered requires that they are successfully demonstrated and licensed. All safety criteria for the reactor with these fuel element designs need to be satisfied as well. With LEU oxide fuel, 31 g U/cm{sup 3} 1 and 0.76 mm--thick fuel meat, elements with 18-22 plates 320-391 g {sup 235}U) result in the same or lower total costs than with the HEU element 23 plates, 280 g {sup 235}U). Higher LEU loadings (more plates per element) are needed for larger excess reactivity requirements. However, there is little cost advantage to using more than 20 of these plates per element. Increasing the fuel meat thickness from 0.76 mm to 1.0 mm with 3.1 g U/cm{sup 3} in the design with 20 plates per element could result in significant cost reductions if the

Detailed analysis of uranium silicide dispersion fuel swelling

International Nuclear Information System (INIS)

Hofmann, G.L.; Ryu, Woo-Seog

1991-01-01

Swelling of U 3 Si and U 3 Si 2 is analyzed. The growth of fission gas bubbles appears to be affected by fission rate, fuel loading, and micro structural change taking place in the fuel compounds during irradiation. Several mechanisms are explored to explain the observations. The present work is aimed at a better understanding of the basic swelling phenomenon in order to accurately model irradiation behavior of uranium silicide dispersion fuel. (orig.)

The formation of magnetic silicide Fe{sub 3}Si clusters during ion implantation

Energy Technology Data Exchange (ETDEWEB)

Balakirev, N. [Kazan National Research Technological University, K.Marx st. 68, Kazan 420015 (Russian Federation); Zhikharev, V., E-mail: valzhik@mail.ru [Kazan National Research Technological University, K.Marx st. 68, Kazan 420015 (Russian Federation); Gumarov, G. [Zavoiskii Physico-Technical Institute of Russian Academy of Sciences, 10/7 Sibirskii trakt st., Kazan 420029 (Russian Federation)

2014-05-01

A simple two-dimensional model of the formation of magnetic silicide Fe{sub 3}Si clusters during high-dose Fe ion implantation into silicon has been proposed and the cluster growth process has been computer simulated. The model takes into account the interaction between the cluster magnetization and magnetic moments of Fe atoms random walking in the implanted layer. If the clusters are formed in the presence of the external magnetic field parallel to the implanted layer, the model predicts the elongation of the growing cluster in the field direction. It has been proposed that the cluster elongation results in the uniaxial magnetic anisotropy in the plane of the implanted layer, which is observed in iron silicide films ion-beam synthesized in the external magnetic field.

Secondary neutral mass spectrometry depth profile analysis of silicides

International Nuclear Information System (INIS)

Beckmann, P.; Kopnarski, M.; Oechsner, H.

1985-01-01

The Direct Bombardment Mode (DBM) of Secondary Neutral Mass Spectrometry (SNMS) has been applied for depth profile analysis of two different multilayer systems containing metal silicides. Due to the extremely high depth resolution obtained with low energy SNMS structural details down to only a few atomic distances are detected. Stoichiometric information on internal oxides and implanted material is supplied by the high quantificability of SNMS. (Author)

Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology.

Science.gov (United States)

Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

2015-12-03

This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm(2), and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p(+-)n homojunction through the formation of re-grown crystalline silicon layer (~5-10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method.

Influence of Al addition on phase transformation and thermal stability of nickel silicides on Si(0 0 1)

International Nuclear Information System (INIS)

Huang, Shih-Hsien; Twan, Sheng-Chen; Cheng, Shao-Liang; Lee, Tu; Hu, Jung-Chih; Chen, Lien-Tai; Lee, Sheng-Wei

2014-01-01

Highlights: ► The presence of Al slows down the Ni 2 Si–NiSi phase transformation but significantly promotes the NiSi 2−x Al x formation. ► The behavior of phase transformation strongly depends on the Al concentration of the initial Ni 1−x Al x alloys. ► The Ni 0.91 Al 0.09 /Si system exhibits remarkably improved thermal stability, even after high temperature annealing for 1000 s. ► The relationship between microstructures, electrical property, and thermal stability of Ni(Al) silicides is discussed. -- Abstract: The influence of Al addition on the phase transformation and thermal stability of Ni silicides on (0 0 1)Si has been systematically investigated. The presence of Al atoms is found to slow down the Ni 2 Si–NiSi phase transformation but significantly promote the NiSi 2−x Al x formation during annealing. The behavior of phase transformation strongly depends on the Al concentration of the initial Ni 1−x Al x alloys. Compared to the Ni 0.95 Pt 0.05 /Si and Ni 0.95 Al 0.05 /Si system, the Ni 0.91 Al 0.09 /Si sample exhibits remarkably enhanced thermal stability, even after high temperature annealing for 1000 s. The relationship between microstructures, electrical property, and thermal stability of Ni silicides is discussed to elucidate the role of Al during the Ni 1−x Al x alloy silicidation. This work demonstrated that thermally stable Ni 1−x Al x alloy silicides would be a promising candidate as source/drain (S/D) contacts in advanced complementary metal–oxide-semiconductor (CMOS) devices

Studies on Optical and Electrical Properties of Hafnium Oxide Nanoparticles

Science.gov (United States)

Jayaraman, Venkatachalam; Sagadevan, Suresh; Sudhakar, Rajesh

2017-07-01

In this paper, the synthesis and physico-chemical properties of hafnium oxide nanoparticles (HfO2 NPs) are analyzed and reported. The synthesis was carried out by the precipitation route by using hafnium tetrachloride (HfCl4) as precursor material with potassium hydroxide (KOH) dissolved in Millipore water. In the precipitation technique, the chemical reaction is comparatively simple, low-cost and non-toxic compared to other synthetic methods. The synthesized HfO2 NPs were characterized by using powder x-ray diffraction (PXRD), ultraviolet-visible (UV-Vis) spectroscopy, Raman analysis, and high-resolution transmission electron microscopy (HRTEM). The monoclinic structure of the HfO2 NPs was resolved utilizing x-ray diffraction (XRD). The optical properties were studied from the UV-Vis absorption spectrum. The optical band gap of the HfO2NPs was observed to be 5.1 eV. The Raman spectrum shows the presence of HfO2 NPs. The HRTEM image showed that the HfO2 NPs were of spherical shape with an average particle size of around 28 nm. The energy-dispersive x-ray spectroscopy (EDS) spectrum obviously demonstrated the presence of HfO2 NPs. Analysis and studies on the dielectric properties of the HfO2 NPs such as the dielectric constant, the dielectric loss, and alternating current (AC) conductivity were carried out at varying frequencies and temperatures.

Rare-earth hafnium oxide materials for magnetohydrodynamic (MHD) generator application

Energy Technology Data Exchange (ETDEWEB)

Marchant, D. D; Bates, J. L.

1979-01-01

Several ceramic materials based on rare-earth hafnium oxides have been identified as potential high-temperature electrodes and low-temperature current leadouts for open cycle coal-fired MHD generator channels. The electrode-current leadouts combination must operate at temperatures between 400 and 2000K with an electrical conductivity greater than 10/sup -2/ ohm/sup -1/ cm/sup -1/. The electrodes will be exposed to flowing (linear flow rates up to 100 m/s) potassium seeded coal combustion gases (plasma core temperatures between 2400 to 3200/sup 0/K) and coal slag. During operation the electrodes must conduct direct electric current at densities near 1.5 amp/cm/sup 2/. Consequently, the electrodes must be resistant to electrochemical decompositions and interactions with both the coal slag and potassium salts (e.g., K/sub 2/SO/sub 4/, K/sub 2/CO/sub 3/). The current leadout materials are placed between the hot electrodes and the water-cooled copper structural members and must have electrical conductivities greater than 10/sup -2/ ohm/sup -1/ cm/sup -1/ between 1400 and 400/sup 0/K. The current leadouts must be thermally and electrochemically compatible with the electrode, copper, and potassium salts. Ideally, the electrodes and current leadouts should exhibit minimal ionic conductivity. The fabrication, electrical conductivity, and electrochemical corrosion of rare-earth hafnium oxide materials are discussed. (WHK)

Making of fission 99Mo from LEU silicide(s): A radiochemists' view

International Nuclear Information System (INIS)

Kolar, Z.I.; Wolterbeek, H.Th.

2005-01-01

The present-day industrial scale production of 99 Mo is fission based and involves thermal-neutron irradiation in research reactors of highly enriched uranium (HEU, > 20 % 235 U) containing targets, followed by radiochemical processing of the irradiated targets resulting in the final product: a 99 Mo containing chemical compound of molybdenum. In 1978 a program (RERTR) was started to develop a substitute for HEU reactor fuel i.e. a low enriched uranium (LEU, 235 U) one. In the wake of that program studies were undertaken to convert HEU into LEU based 99 Mo production. Both new targets and radiochemical treatments leading to 99 Mo compounds were proposed. One of these targets is based on LEU silicide, U 3 Si 2 . Present paper aims at comparing LEU U 3 Si 2 and LEU U 3 Si with another LEU target i.e. target material and arriving at some preferences pertaining to 99 Mo production. (author)

Detailed analysis of uranium silicide dispersion fuel swelling

International Nuclear Information System (INIS)

Hofman, G.L.; Ryu, Woo-Seog.

1989-01-01

Swelling of U 3 Si and U 3 Si 2 is analyzed. The growth of fission gas bubbles appears to be affected by fission rate, fuel loading, and microstructural change taking place in the fuel compounds during irradiation. Several mechanisms are explored to explain the observations. The present work is aimed at a better understanding of the basic swelling phenomenon in order to accurately model irradiation behavior of uranium silicide disperson fuel. 5 refs., 10 figs

Hafnium isotope evidence for a transition in the dynamics of continental growth 3.2 Gyr ago.

Science.gov (United States)

Næraa, T; Scherstén, A; Rosing, M T; Kemp, A I S; Hoffmann, J E; Kokfelt, T F; Whitehouse, M J

2012-05-30

Earth's lithosphere probably experienced an evolution towards the modern plate tectonic regime, owing to secular changes in mantle temperature. Radiogenic isotope variations are interpreted as evidence for the declining rates of continental crustal growth over time, with some estimates suggesting that over 70% of the present continental crustal reservoir was extracted by the end of the Archaean eon. Patterns of crustal growth and reworking in rocks younger than three billion years (Gyr) are thought to reflect the assembly and break-up of supercontinents by Wilson cycle processes and mark an important change in lithosphere dynamics. In southern West Greenland numerous studies have, however, argued for subduction settings and crust growth by arc accretion back to 3.8 Gyr ago, suggesting that modern-day tectonic regimes operated during the formation of the earliest crustal rock record. Here we report in situ uranium-lead, hafnium and oxygen isotope data from zircons of basement rocks in southern West Greenland across the critical time period during which modern-like tectonic regimes could have initiated. Our data show pronounced differences in the hafnium isotope-time patterns across this interval, requiring changes in the characteristics of the magmatic protolith. The observations suggest that 3.9-3.5-Gyr-old rocks differentiated from a >3.9-Gyr-old source reservoir with a chondritic to slightly depleted hafnium isotope composition. In contrast, rocks formed after 3.2 Gyr ago register the first additions of juvenile depleted material (that is, new mantle-derived crust) since 3.9 Gyr ago, and are characterized by striking shifts in hafnium isotope ratios similar to those shown by Phanerozoic subduction-related orogens. These data suggest a transitional period 3.5-3.2 Gyr ago from an ancient (3.9-3.5 Gyr old) crustal evolutionary regime unlike that of modern plate tectonics to a geodynamic setting after 3.2 Gyr ago that involved juvenile crust generation by plate

The interaction of fast neutrons with hafnium

International Nuclear Information System (INIS)

Smith, A.B.

2002-01-01

Elemental hafnium neutron total cross sections are measured from ∼0.75 to 4.5 MeV in steps of ∼40 keV. Differential neutron elastic-scattering cross sections are measured from ∼4.5 to 10.0 MeV in ∼0.5 MeV steps and at 40 scattering angles distributed between ∼17 and 160 deg. These data are combined with those found in the literature to construct a comprehensive experimental data base which is interpreted in terms of coupled-channels models. Physical characteristics of the resulting potentials are discussed. Comparisons are made with ENDF/B-6 (MAT 7200). A detailed report of this work is given by Smith (Smith, A., 2001. Argonne National Laboratory Report ANL/NDM-153)

Reinforcement against crack propagation of PWR absorbers by development of boron-carbon-hafnium composites

International Nuclear Information System (INIS)

Provot, B.; Herter, P.

2000-01-01

In order to improve the mechanical behaviour of materials used as neutron absorbers in nuclear reactors, we have developed CERCER or CERMET composites with boron and hafnium. Thus a new composite B 4 C/HfB 2 has been especially studied. We have identified three kinds of degradation under irradiation (thermal gradient, swelling due to fission products and accidental corrosion) that induce imposed deformations cracking phenomena. Mechanical behaviour and crack propagation resistance have been studied by ball-on-three-balls and double torsion tests. A special device was developed to enable crack propagation and associated stress intensity factor measurements. Effects of structure and of a second phase are underline. First results show that these materials present crack initiation and propagation resistance much higher than pure boron carbide or hafnium diboride. We observe R-Curves effects, crack bridging or branching, crack arrests, and toughness increases that we can relate respectively to the composite structures. (author)

X-ray photoemission spectromicroscopy of titanium silicide formation in patterned microstructures

Energy Technology Data Exchange (ETDEWEB)

Singh, S.; Solak, H.; Cerrina, F. [Univ. of Wisconsin-Madison, Stoughton, WI (United States)] [and others

1997-04-01

Titanium silicide has the lowest resistivity of all the refractory metal silicides and has good thermal stability as well as excellent compatibility with Al metallization. It is used as an intermediate buffer layer between W vias and the Si substrate to provide good electrical contact in ULSI technology, whose submicron patterned features form the basis of the integrated circuits of today and tomorrow, in the self aligned silicide (salicide) formation process. TiSi{sub 2} exists in two phases: a metastable C49 base-centered orthorhombic phase with specific resistivity of 60-90 {mu}{Omega}-cm that is formed at a lower temperature (formation anneal) and the stable 12-15 {mu}{Omega}-cm resistivity face-centered orthorhombic C54 phase into which C49 is transformed with a higher temperature (conversion anneal) step. C54 is clearly the target for low resistivity VLSI interconnects. However, it has been observed that when dimensions shrink below 1/mic (or when the Ti thickness drops below several hundred angstroms), the transformation of C49 into C54 is inhibited and agglomeration often occurs in fine lines at high temperatures. This results in a rise in resistivity due to incomplete transformation to C54 and because of discontinuities in the interconnect line resulting from agglomeration. Spectromicroscopy is an appropriate tool to study the evolution of the TiSi2 formation process because of its high resolution chemical imaging ability which can detect bonding changes even in the absence of changes in the relative amounts of species and because of the capability of studying thick {open_quotes}as is{close_quotes} industrial samples.

X-ray photoemission spectromicroscopy of titanium silicide formation in patterned microstructures

International Nuclear Information System (INIS)

Singh, S.; Solak, H.; Cerrina, F.

1997-01-01

Titanium silicide has the lowest resistivity of all the refractory metal silicides and has good thermal stability as well as excellent compatibility with Al metallization. It is used as an intermediate buffer layer between W vias and the Si substrate to provide good electrical contact in ULSI technology, whose submicron patterned features form the basis of the integrated circuits of today and tomorrow, in the self aligned silicide (salicide) formation process. TiSi 2 exists in two phases: a metastable C49 base-centered orthorhombic phase with specific resistivity of 60-90 μΩ-cm that is formed at a lower temperature (formation anneal) and the stable 12-15 μΩ-cm resistivity face-centered orthorhombic C54 phase into which C49 is transformed with a higher temperature (conversion anneal) step. C54 is clearly the target for low resistivity VLSI interconnects. However, it has been observed that when dimensions shrink below 1/mic (or when the Ti thickness drops below several hundred angstroms), the transformation of C49 into C54 is inhibited and agglomeration often occurs in fine lines at high temperatures. This results in a rise in resistivity due to incomplete transformation to C54 and because of discontinuities in the interconnect line resulting from agglomeration. Spectromicroscopy is an appropriate tool to study the evolution of the TiSi2 formation process because of its high resolution chemical imaging ability which can detect bonding changes even in the absence of changes in the relative amounts of species and because of the capability of studying thick open-quotes as isclose quotes industrial samples

Titrimetric determination of thiocyanate in solutions of the hafnium-zirconium separation process

International Nuclear Information System (INIS)

Vazquez, Cristina; Botbol, Moises; Hernandez, M.H.

1980-01-01

The control of the thiocyanate concentration is necessary during the process of separating hafnium from zirconium by the hexone-thiocyanate method. Said control is carried out by titrimetric determination of thiocyanate in aqueous and organic solutions containing hydrochloric acid and ammonium thiocyanate in presence or absence of zirconium and/or hafnium. The method consists in a redox volumetric analysis using a cerium (IV) salt as titrating agent, and ferroine as the final point indicator. Owing to the instability of thiocyanate in an acid medium it is necessary to know previously if the decomposition of solutions with different concentration of ammonium thiocyanate and hydrochloric acid may have an influence upon the analytic results or may even invalidate them. In order to obtain reliable results, it must be taken into account that the stability of the solutions depends on the thiocyanate concentration, the acidity and the time elapsed from the moment the sample is taken until the test is performed. The decomposition process can be slowed down by cooling the solutions. This method allows to control the plant and does not require any special equipment. (M.E.L) [es

Synthesis and characterization of hafnium oxide for luminescent applications

International Nuclear Information System (INIS)

Guzman Mendoza, J.; Aguilar Frutis, M.A.; Flores, G. Alarcon; Garcia Hipolito, M.; Azorin Nieto, J.; Rivera Montalvo, T.; Falcony, C.

2008-01-01

Full text: Hafnium oxide (HfO 2 ) is a material with a wide range of possible technological applications because it's chemical and physical properties such as high melting point, high chemical stability, high refraction index, high dielectric constant and hardness near to diamond in the tetragonal phase. The large energy gap and low phonon frequencies of the HfO 2 makes it appropriate as a host matrix for been doped with rare earth activators. Efficient luminescent materials find wide application in electroluminescent flat panel displays; color plasma displays panels, scintillators, cathode ray tubes, fluorescent lamps, lasers, etc. In recent years the study of luminescent materials based on HfO 2 has been intensified. Some groups have studied the optical properties of doped and undoped HfO 2 . In this contribution, Hafnium Oxide (HfO 2 ) films were prepared using the spray pyrolysis deposition technique. The material was synthesized using chlorides as raw materials in deionised water as solvent and deposited on Corning glass substrates at temperatures from 300 deg C to 600 deg C. For substrate temperatures lower than 400 deg C, the deposited films are amorphous, while for substrate temperatures higher than 450 deg C, the monoclinic phase of HfO 2 appears. Scanning electron microscopy with microprobe analysis was use to observe the microstructure and obtain the chemical composition of the films; rough surfaces with spherical particles were appreciated. UV and low energy X Ray radiations were used in order to achieve the thermoluminescent characterization of the films as a function of the deposition temperature

Titanium, zirconium- and hafnium containing initiators in the polymerization of acrylic monomers to ''living'' polymers

International Nuclear Information System (INIS)

Farnham, W.B.; Hertler, W.R.

1988-01-01

This patent describes a process for preparing ''living'' polymer. The process comprises contacting one or more acrylic monomers under polymerizing conditions with a polymerization-initiating amount of a tetra-coordinate organotitanium, organozirconium or organo-hafnium polymerization initiator, and ''living'' polymers produced thereby

Zirconium and hafnium tetrachloride separation by extractive distillation with molten zinc chloride lead chloride solvent

International Nuclear Information System (INIS)

McLaughlin, D.F.; Stoltz, R.A.

1988-01-01

In an extractive distillation method for separating hafniuim tetrachloride from zirconium tetrachloride of the type wherein a mixture of zirconium and hafnium tetrachlorides is introduced into an extractive distillation column, which extractive distillation column has a reboiler connected at the bottom and a reflux condenser connected at the top and wherein a molten salt solvent is circulated into the reflux condenser and through the column to provide a liquid phase, and wherein molten salt solvent containing zirconium tetrachloride is taken from the reboiler and run through a stripper to remove zirconium tetrachloride product from the molten salt solvent and the stripped molten salt solvent is returned to the reflux condenser and hafnium tetrachloride enriched vapor is taken as product from the reflux condenser, the improvement is described comprising: the molten salt having a composition of at least 30 mole percent zinc chloride and at least 10 mole percent of lead chloride

Atomic layer deposition of calcium oxide and calcium hafnium oxide films using calcium cyclopentadienyl precursor

International Nuclear Information System (INIS)

Kukli, Kaupo; Ritala, Mikko; Sajavaara, Timo; Haenninen, Timo; Leskelae, Markku

2006-01-01

Calcium oxide and calcium hafnium oxide thin films were grown by atomic layer deposition on borosilicate glass and silicon substrates in the temperature range of 205-300 o C. The calcium oxide films were grown from novel calcium cyclopentadienyl precursor and water. Calcium oxide films possessed refractive index 1.75-1.80. Calcium oxide films grown without Al 2 O 3 capping layer occurred hygroscopic and converted to Ca(OH) 2 after exposure to air. As-deposited CaO films were (200)-oriented. CaO covered with Al 2 O 3 capping layers contained relatively low amounts of hydrogen and re-oriented into (111) direction upon annealing at 900 o C. In order to examine the application of CaO in high-permittivity dielectric layers, mixtures of Ca and Hf oxides were grown by alternate CaO and HfO 2 growth cycles at 230 and 300 o C. HfCl 4 was used as a hafnium precursor. When grown at 230 o C, the films were amorphous with equal amounts of Ca and Hf constituents (15 at.%). These films crystallized upon annealing at 750 o C, showing X-ray diffraction peaks characteristic of hafnium-rich phases such as Ca 2 Hf 7 O 16 or Ca 6 Hf 19 O 44 . At 300 o C, the relative Ca content remained below 8 at.%. The crystallized phase well matched with rhombohedral Ca 2 Hf 7 O 16 . The dielectric films grown on Si(100) substrates possessed effective permittivity values in the range of 12.8-14.2

Rare earth silicide nanowires on silicon surfaces

International Nuclear Information System (INIS)

Wanke, Martina

2008-01-01

The growth, structure and electronic properties of rare earth silicide nanowires are investigated on planar and vicinal Si(001) und Si(111) surfaces with scanning tunneling microscopy (STM), low energy electron diffraction (LEED) and angle-resolved photoelectron spectroscopy (ARPES). On all surfaces investigated within this work hexagonal disilicides are grown epitaxially with a lattice mismatch of -2.55% up to +0.83% along the hexagonal a-axis. Along the hexagonal c-axis the lattice mismatch is essentially larger with 6.5%. On the Si(001)2 x 1 surface two types of nanowires are grown epitaxially. The socalled broad wires show a one-dimensional metallic valence band structure with states crossing the Fermi level. Along the nanowires two strongly dispersing states at the anti J point and a strongly dispersing state at the anti Γ point can be observed. Along the thin nanowires dispersing states could not be observed. Merely in the direction perpendicular to the wires an intensity variation could be observed, which corresponds to the observed spacial structure of the thin nanowires. The electronic properties of the broad erbium silicide nanowires are very similar to the broad dysprosium silicide nanowires. The electronic properties of the DySi 2 -monolayer and the Dy 3 Si 5 -multilayer on the Si(111) surface are investigated in comparison to the known ErSi 2 /Si(111) and Er 3 Si 5 /Si(111) system. The positions and the energetic locations of the observed band in the surface Brillouin zone will be confirmed for dysprosium. The shape of the electron pockets in the vector k parallel space is elliptical at the anti M points, while the hole pocket at the anti Γ point is showing a hexagonal symmetry. On the Si(557) surface the structural and electronic properties depend strongly on the different preparation conditions likewise, in particular on the rare earth coverage. At submonolayer coverage the thin nanowires grow in wide areas of the sample surface, which are oriented

Separation of zirconium--hafnium by nitride precipitation

International Nuclear Information System (INIS)

Anderson, R.N.; Parlee, N.A.

1977-01-01

A method is described for the separation of a light reactive metal (e.g., zirconium) from a heavy reactive metal (e.g., hafnium) by forming insoluble nitrides of the metals in a molten metal solvent (e.g., copper) inert to nitrogen and having a suitable density for the light metal nitride to form a separate phase in the upper portion of the solvent and for the heavy metal nitride to form a separate phase in the lower portion of the solvent. Nitriding is performed by maintaining a nitrogen-containing atmosphere over the bath. The light and heavy metals may be an oxide mixture and carbothermically reduced to metal form in the same bath used for nitriding. The nitrides are then separately removed and decomposed to form the desired separate metals. 16 claims, 1 figure

Modified method for zirconium or hafnium gravimetric determination with glycolic acid derivatives

International Nuclear Information System (INIS)

Barbieri, R.S.; Rocha, J.C.; Terra, V.R.; Marques Neto, A.

1989-01-01

The conditions for gravimetric determination of zirconium or hafnium by glicolic acid derivatives were studied by thermogravimetric analysis. The method utilized shown that after precipitation, washing and drying of precipitates at 150 0 C, the resulting solid was weighed in the form of [M{RCH(OH)COO} 4 ] (M = Zr,Hf;R = C 6 H 5 , β-C 10 H 7 ,p-BrC 6 H 4 ). (author) [pt

Correlations between nuclear data and integral slab experiments: the case of hafnium; Correlations entre donnees nucleaires et experiences integrales a plaques: le cas du hafnium

Energy Technology Data Exchange (ETDEWEB)

Palau, J M

1999-07-01

The aim of this work was to evaluate how much integral slab experiments can both reduce discrepancies between experimental results and calculations, and improve the knowledge of hafnium isotopes neutronic parameters by an adapted sensitivity and uncertainty method. A statistical approach, based on the generalized least squares method and perturbation theory, has been incorporated into our calculation system in order to deduce microscopic cross-section adjustments from observed integral measurements on this particular 'mock-up' reactor.In this study it has been established that the correlations between integral parameters and hafnium capture cross-sections enable specific variations in the region of resolved resonances at the level of multigroup and punctual cross-sections recommended data (JEF-2.2 evaluation) to be highlighted. The use of determinist methods together with Monte Carlo- type simulations enabled a depth analysis of the modelling approximations to be carried out. Furthermore, the sensitivity coefficient validation technique employed leads to a reliable assessment of the quality of the new basic nuclear data. In this instance, the adjustments proposed for certain isotope {sup 177}Hf resonance parameters reduce, after error propagation, by 3 to 5 per cent the difference between experimental results and calculations related to this absorbent's efficiency. Beyond this particular application, the qualification methodology integrated in our calculation system should enable other basic sizing parameters to be treated (chemical / geometric data or other unexplored nuclear data) to make technological requirements less stringent. (author)

Correlations between nuclear data and integral slab experiments: the case of hafnium; Correlations entre donnees nucleaires et experiences integrales a plaques: le cas du hafnium

Energy Technology Data Exchange (ETDEWEB)

Palau, J.M

1999-07-01

The aim of this work was to evaluate how much integral slab experiments can both reduce discrepancies between experimental results and calculations, and improve the knowledge of hafnium isotopes neutronic parameters by an adapted sensitivity and uncertainty method. A statistical approach, based on the generalized least squares method and perturbation theory, has been incorporated into our calculation system in order to deduce microscopic cross-section adjustments from observed integral measurements on this particular 'mock-up' reactor.In this study it has been established that the correlations between integral parameters and hafnium capture cross-sections enable specific variations in the region of resolved resonances at the level of multigroup and punctual cross-sections recommended data (JEF-2.2 evaluation) to be highlighted. The use of determinist methods together with Monte Carlo- type simulations enabled a depth analysis of the modelling approximations to be carried out. Furthermore, the sensitivity coefficient validation technique employed leads to a reliable assessment of the quality of the new basic nuclear data. In this instance, the adjustments proposed for certain isotope {sup 177}Hf resonance parameters reduce, after error propagation, by 3 to 5 per cent the difference between experimental results and calculations related to this absorbent's efficiency. Beyond this particular application, the qualification methodology integrated in our calculation system should enable other basic sizing parameters to be treated (chemical / geometric data or other unexplored nuclear data) to make technological requirements less stringent. (author)

Oxidation-resistant Ge-doped silicide coating on Cr-Cr2Nb alloys by pack cementation

International Nuclear Information System (INIS)

He Yirong

1997-01-01

The halide-activated pack cementation process was modified to produce a Ge-doped silicide diffusion coating on Cr-Cr 2 Nb alloys in a single processing step. The morphology and composition of the coating depended both on the pack composition and processing schedule and also on the composition and microstructure of the substrate. Higher Ge content in the pack suppressed the formation of CrSi 2 and reduced the growth kinetics of the coating. Ge was not homogeneously distributed in the coatings. Under cyclic and isothermal oxidation conditions, the Ge-doped silicide coating protected the Cr-Nb alloys from significant oxidation and from pesting by the formation of a Ge-doped silica film. (orig.)

On-line separation of refractory hafnium and tantalum isotopes at the ISOCELE separator

CERN Document Server

Liang, C F; Obert, J; Paris, P; Putaux, J C

1981-01-01

By chemical evaporation technique, neutron deficient hafnium nuclei have been on-line separated at the ISOCELE facility, from the isobar rare-earth elements, in the metal-fluoride HfF/sub 3//sup +/ ion form. Half-lives of /sup 162-165/Hf have been measured. Similarly, tantalum has been selectively separated on the TaF/sub 4//sup +/ form. (4 refs) .

RA-3 reactor core with uranium silicide fuel elements P-07 type

International Nuclear Information System (INIS)

Abbate, Maximo J.; Sbaffoni, Maria M.

2003-01-01

Following the studies on the utilization of fuel elements (FE) containing uranium silicide, core of the RA-3 was analyzed with several calculation models. At first, the present situation, i.e. the core charged with normal FE (U 3 O 8 ), has been analyzed to validate the simulation methodology comparing with experimental results and to establish reference data to 5 and 10 MW able to be compared with future new situations. Also, CITVAP's nuclear data libraries to be used in irradiation experiment planning were completed. The results were satisfactory and were applied to the study of the core containing P-07 FE [U 3 Si 2 ], in face of a future core change. Comparing with the performance of the U 3 O 8 FE, the silicides ones show the following advantages: - average burnup: 45 % greater; -extraction burnup increase 12 %; and, -the residence time [in full power days] could be a 117 % greater. (author)

Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide.

Science.gov (United States)

Timm, Rainer; Head, Ashley R; Yngman, Sofie; Knutsson, Johan V; Hjort, Martin; McKibbin, Sarah R; Troian, Andrea; Persson, Olof; Urpelainen, Samuli; Knudsen, Jan; Schnadt, Joachim; Mikkelsen, Anders

2018-04-12

Atomic layer deposition (ALD) enables the ultrathin high-quality oxide layers that are central to all modern metal-oxide-semiconductor circuits. Crucial to achieving superior device performance are the chemical reactions during the first deposition cycle, which could ultimately result in atomic-scale perfection of the semiconductor-oxide interface. Here, we directly observe the chemical reactions at the surface during the first cycle of hafnium dioxide deposition on indium arsenide under realistic synthesis conditions using photoelectron spectroscopy. We find that the widely used ligand exchange model of the ALD process for the removal of native oxide on the semiconductor and the simultaneous formation of the first hafnium dioxide layer must be significantly revised. Our study provides substantial evidence that the efficiency of the self-cleaning process and the quality of the resulting semiconductor-oxide interface can be controlled by the molecular adsorption process of the ALD precursors, rather than the subsequent oxide formation.

X-ray-emission studies of chemical bonding in transition-metal silicides

NARCIS (Netherlands)

Weijs, P.J.W.; Leuken, H. van; Groot, R.A. de; Fuggle, J.C.; Reiter, S.; Wiech, G.; Buschow, K.H.J.

1991-01-01

We present Si L2,3 emission-band spectra of a series of 3d and 4d transition-metal (TM) silicides, together wtih Si K emission-band spectra of four 3d TM disilicides. The data are compared with augmented-spherical-wave density-of-states (DOS) calculations, and good agreement is found. The trends we

High pressure studies on uranium and thorium silicide compounds: Experiment and theory

DEFF Research Database (Denmark)

Yagoubi, S.; Heathman, S.; Svane, A.

2013-01-01

The actinide silicides ThSi, USi and USi2 have been studied under high pressure using both theory and experiment. High pressure synchrotron X-ray diffraction experiments were performed on polycrystalline samples in diamond anvil cells at room temperature and for pressures up to 54, 52 and 26 GPa...

Ground-state structures of Hafnium clusters

Energy Technology Data Exchange (ETDEWEB)

Ng, Wei Chun; Yoon, Tiem Leong [School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia); Lim, Thong Leng [Faculty of Engineering and Technoloty, Multimedia University, Melaca Campus, 75450 Melaka (Malaysia)

2015-04-24

Hafnium (Hf) is a very large tetra-valence d-block element which is able to form relatively long covalent bond. Researchers are interested to search for substitution to silicon in the semi-conductor industry. We attempt to obtain the ground-state structures of small Hf clusters at both empirical and density-functional theory (DFT) levels. For calculations at the empirical level, charge-optimized many-body functional potential (COMB) is used. The lowest-energy structures are obtained via a novel global-minimum search algorithm known as parallel tempering Monte-Carlo Basin-Hopping and Genetic Algorithm (PTMBHGA). The virtue of using COMB potential for Hf cluster calculation lies in the fact that by including the charge optimization at the valence shells, we can encourage the formation of proper bond hybridization, and thus getting the correct bond order. The obtained structures are further optimized using DFT to ensure a close proximity to the ground-state.

Molecular structure, vibrational, HOMO-LUMO, MEP and NBO analysis of hafnium selenite

Science.gov (United States)

Yankova, Rumyana; Genieva, Svetlana; Dimitrova, Ginka

2017-08-01

In hydrothermal condition hafnium selenite with estimated chemical composition Hf(SeO3)2·n(H2O) was obtained and characterized by powder X-Ray diffraction, IR spectroscopy and thermogravimetrical analysis. The composition of the obtained crystalline phase was established as dihydrate of tetraaqua complex of the hafnium selenite [Hf(SeO3)2(H2O)4]·2H2O. The results of the thermogravimetrical analysis are shown that the two hydrated water molecules are released in the temperature interval 80-110°C, while the four coordinated water molecules - at 210-300°C. By DFT method, with Becke's three parameter exchange-functional combined with gradient-corrected correlation functional of Lee, Yang and Parr and 6-31G(d), 6-311 + G(d,p) basis sets and LANL2DZ for Hf atom were calculated the molecular structure, vibrational frequencies and thermodynamic properties of the structure. The UV-Vis spectra and electronic properties are presented. The energy and oscillator strength calculated by time-dependent density functional theory corresponds well with the experimental ones. Molecular electrostatic potential (MEP) was performed. Mulliken population analysis on atomic charges was also calculated. The stability and intramolecular interactions are interpreted by NBO analysis.

Near net shape processing of zirconium or hafnium metals and alloys

International Nuclear Information System (INIS)

Evans, S.C.

1992-01-01

This patent describes a process for producing a metal shape. It comprises: plasma arc melting a metal selected from zirconium, hafnium and alloys thereof comprising at least about 90 w/o of these metals to form a liquid pool; pouring the metal form the pool into a mold to form a near net shape; and reducing the metal from its near net shape to a final size while maintaining the metal temperature below the alpha-beta transition temperature throughout the size reducing step

The fabrication and performance of Canadian silicide dispersion fuel for test reactors

International Nuclear Information System (INIS)

Sears, D.F.; Wood, J.C.; Berthiaume, L.C.; Herbert, L.N.; Schaefer, J.D.

1985-01-01

Fuel fabrication effort is now concentrated on the commissioning of large-scale process equipment, defining product specifications, developing a quality assurance plan, and setting up a mini-computer material accountancy system. In the irradiation testing program, full-size NRU assemblies containing 20% enriched silicide dispersion fuel have been Irradiated successfully to burnups in the range 65-80 atomic percent. Irradiations have also been conducted on mini-elements having 1.2 mm diameter holes In their mid-sections, some drilled before irradiation and others after irradiation to 22-83 atomic percent burnup. Uranium was lost to the coolant in direct proportion to the surface area of exposed core material. Pre-irradiation in the intact condition appeared to reduce in-reactor corrosion. Fuel cores developed for the NRU reactor are dimensionally very stable, swelling by only 6-8% at the very high burnup of 93 atomic percent. Two important factors contributing to this good performance are cylindrical clad restraint and coarse silicide particles. Thermal ramping tests were conducted on irradiated silicide aspersion fuels. Small segments of fuel cores released 85 Kr starting at about 520 deg. C and peaking at about 680 deg C. After a holding period of 1 hour at 720 deg. C a secondary 85 Kr peak occurred during cooling (at about 330 deg. C) probably due to thermal contraction cracking. Whole mini-elements irradiated to 93 atomic percent burnup were also ramped thermally, with encouraging results. After about 0.25 h at 530 deg. C the aluminum cladding developed very localized small blisters, some with penetrating pin-hole cracks preventing gross pillowing or ballooning. (author)

The fabrication and performance of Canadian silicide dispersion fuel for test reactors

Energy Technology Data Exchange (ETDEWEB)

Sears, D F; Wood, J C; Berthiaume, L C; Herbert, L N; Schaefer, J D

1985-07-01

Fuel fabrication effort is now concentrated on the commissioning of large-scale process equipment, defining product specifications, developing a quality assurance plan, and setting up a mini-computer material accountancy system. In the irradiation testing program, full-size NRU assemblies containing 20% enriched silicide dispersion fuel have been Irradiated successfully to burnups in the range 65-80 atomic percent. Irradiations have also been conducted on mini-elements having 1.2 mm diameter holes In their mid-sections, some drilled before irradiation and others after irradiation to 22-83 atomic percent burnup. Uranium was lost to the coolant in direct proportion to the surface area of exposed core material. Pre-irradiation in the intact condition appeared to reduce in-reactor corrosion. Fuel cores developed for the NRU reactor are dimensionally very stable, swelling by only 6-8% at the very high burnup of 93 atomic percent. Two important factors contributing to this good performance are cylindrical clad restraint and coarse silicide particles. Thermal ramping tests were conducted on irradiated silicide aspersion fuels. Small segments of fuel cores released {sup 85}Kr starting at about 520 deg. C and peaking at about 680 deg C. After a holding period of 1 hour at 720 deg. C a secondary {sup 85}Kr peak occurred during cooling (at about 330 deg. C) probably due to thermal contraction cracking. Whole mini-elements irradiated to 93 atomic percent burnup were also ramped thermally, with encouraging results. After about 0.25 h at 530 deg. C the aluminum cladding developed very localized small blisters, some with penetrating pin-hole cracks preventing gross pillowing or ballooning. (author)

In-Pile Experiment of a New Hafnium Aluminide Composite Material to Enable Fast Neutron Testing in the Advanced Test Reactor

Energy Technology Data Exchange (ETDEWEB)

Donna Post Guillen; Douglas L. Porter; James R. Parry; Heng Ban

2010-06-01

A new hafnium aluminide composite material is being developed as a key component in a Boosted Fast Flux Loop (BFFL) system designed to provide fast neutron flux test capability in the Advanced Test Reactor. An absorber block comprised of hafnium aluminide (Al3Hf) particles (~23% by volume) dispersed in an aluminum matrix can absorb thermal neutrons and transfer heat from the experiment to pressurized water cooling channels. However, the thermophysical properties, such as thermal conductivity, of this material and the effect of irradiation are not known. This paper describes the design of an in-pile experiment to obtain such data to enable design and optimization of the BFFL neutron filter.

Complexing of zirconium and hafnium with ortho-aminobenzoic acid and paraaminobenzoic acid

International Nuclear Information System (INIS)

Alekseeva, I.I.; Nemzer, I.I.; Yuranova, L.I.; Borisova, V.V.; Prozorovskaya, Z.N.

1977-01-01

Formation of complexes between zirconium and hafnium and ortho- and para-aminobenzoic acids has been studied by the kinetic method. It has been found that at pH=1.3-2.0 and concentrations of metals 10 -5 -10 -6 mole complex compounds are formed with composition Me:L=1:2 and 1:1 (Me=Zr, Hf; L=ortho- or para-aminobenzoic acids). Stepwise constants and overall effective constants of complex formation have been calculated

Correlations between nuclear data and results of integral slab experiments. Case of hafnium; Correlations entre donnees nucleaires et experiences integrales a plaques: le cas du hafnium

Energy Technology Data Exchange (ETDEWEB)

Palau, J M

1997-10-22

The aim of this thesis was to evaluate how much integral slab experiments can both reduce discrepancies between experimental results and calculations, and improve the knowledge of hafnium isotopes neutronic parameters by an adapted sensitivity and uncertainty method. A statistical approach, based on the generalized least squares method and perturbation theory, has been incorporated into our calculation system in order to deduce microscopic cross-section adjustments from observed integral measurements on this particular `mock-up` reactor. In this study it has been established that the correlations between integral parameters and hafnium capture cross-sections enable specific variations in the region of resolved resonances at the level of multigroup and punctual cross-sections recommended data (JEF-2.2 evaluation) to be highlighted. The use of determinist methods (APOLLO2 code) together with Monte Carlo- type simulations (TRIPOLI4 code) enabled a depth analysis of the modelling approximations to be carried out. Furthermore, the sensitivity coefficient validation technique employed leads to a reliable assessment of the quality of the new basic nuclear data. In this instance, the adjustments proposed for certain isotope {sup 177}Hf resonance parameters reduce, after error propagation, by 3 to 5 per cent the difference between experimental results and calculations related to this absorbent`s efficiency. Beyond this particular application, the qualification methodology integrated in our calculation system should enable other basic sizing parameters to be treated (chemical / geometric data or other unexplored nuclear data) to make technological requirements less stringent. (author) 128 refs.

High temperature thermodynamics of solutions of oxygen in zirconium and hafnium

International Nuclear Information System (INIS)

Boureau, G.; Gerdanian, P.

1984-01-01

The Tian-Calvet microcalorimetric method has been applied to the determination at 1323 Kelvin of ΔH(O 2 ), the partial molar enthalpy of mixing of oxygen in zirconium and in hafnium. No measurable departure from Henry's law has been found for dilute solutions (ratio oxygen over metal smaller than 0.1). For concentrated solutions repulsive interactions are found in agreement with the existence of ordered structures at lower temperatures. The domain of homogeneity of zirconium has been found larger than previously assumed. (author)

Rare earth silicide nanowires on silicon surfaces

Energy Technology Data Exchange (ETDEWEB)

Wanke, Martina

2008-11-10

The growth, structure and electronic properties of rare earth silicide nanowires are investigated on planar and vicinal Si(001) und Si(111) surfaces with scanning tunneling microscopy (STM), low energy electron diffraction (LEED) and angle-resolved photoelectron spectroscopy (ARPES). On all surfaces investigated within this work hexagonal disilicides are grown epitaxially with a lattice mismatch of -2.55% up to +0.83% along the hexagonal a-axis. Along the hexagonal c-axis the lattice mismatch is essentially larger with 6.5%. On the Si(001)2 x 1 surface two types of nanowires are grown epitaxially. The socalled broad wires show a one-dimensional metallic valence band structure with states crossing the Fermi level. Along the nanowires two strongly dispersing states at the anti J point and a strongly dispersing state at the anti {gamma} point can be observed. Along the thin nanowires dispersing states could not be observed. Merely in the direction perpendicular to the wires an intensity variation could be observed, which corresponds to the observed spacial structure of the thin nanowires. The electronic properties of the broad erbium silicide nanowires are very similar to the broad dysprosium silicide nanowires. The electronic properties of the DySi{sub 2}-monolayer and the Dy{sub 3}Si{sub 5}-multilayer on the Si(111) surface are investigated in comparison to the known ErSi{sub 2}/Si(111) and Er{sub 3}Si{sub 5}/Si(111) system. The positions and the energetic locations of the observed band in the surface Brillouin zone will be confirmed for dysprosium. The shape of the electron pockets in the (vector)k {sub parallel} space is elliptical at the anti M points, while the hole pocket at the anti {gamma} point is showing a hexagonal symmetry. On the Si(557) surface the structural and electronic properties depend strongly on the different preparation conditions likewise, in particular on the rare earth coverage. At submonolayer coverage the thin nanowires grow in wide areas

Reactivity And Neutron Flux At Silicide Fuel Element In The Core Of RSG-GAS

International Nuclear Information System (INIS)

Hamzah, Amir

2000-01-01

In order to 4.8 and 5.2 gr U/cm exp 3 loading of U 3 Si 2 --Al fuel plates characterization, he core reactivity change and neutron flux depression had been done. Control rod calibration method was used to reactivity change measurement and neutron flux distribution was measured using foil activation method. Measurement of insertion of A-type of testing fuel element with U-loading above cannot be done due to technical reason, so the measurement using full type silicide fuel element of 2.96 gr U/cm exp 3 loading. The reactivity change measurement result of insertion in A-9 and C-3 is + 2.67 cent. The flux depression at silicide fuel in A-9 is 1.69 times bigger than oxide and in C-3 is 0.68 times lower than oxide

A long-term ultrahigh temperature application of layered silicide coated Nb alloy in air

Science.gov (United States)

Sun, Jia; Fu, Qian-Gang; Li, Tao; Wang, Chen; Huo, Cai-Xia; Zhou, Hong; Yang, Guan-Jun; Sun, Le

2018-05-01

Nb-based alloy possessed limited application service life at ultrahigh temperature (>1400 °C) in air even taking the effective protective coating strategy into consideration for last decades. In this work a long duration of above 128 h at 1500 °C in air was successfully achieved on Nb-based alloy thanked to multi-layered silicide coating. Through optimizing interfaces, the MoSi2/NbSi2 silicide coating with Al2O3-adsorbed-particles layer exhibited three-times higher of oxidation resistance capacity than the one without it. In MoSi2-Al2O3-NbSi2 multilayer coating, the Al2O3-adsorbed-particles layer playing as an element-diffusion barrier role, as well as the formed porous Nb5Si3 layer as a stress transition zone, contributed to the significant improvement.

Electrical and optical properties of sub-10 nm nickel silicide films for silicon solar cells

International Nuclear Information System (INIS)

Brahmi, Hatem; Ravipati, Srikanth; Yarali, Milad; Wang, Weijie; Ryou, Jae-Hyun; Mavrokefalos, Anastassios; Shervin, Shahab

2017-01-01

Highly conductive and transparent films of ultra-thin p-type nickel silicide films have been prepared by RF magnetron sputtering of nickel on silicon substrates followed by rapid thermal annealing in an inert environment in the temperature range 400–600 °C. The films are uniform throughout the wafer with thicknesses in the range of 3–6 nm. The electrical and optical properties are presented for nickel silicide films with varying thickness. The Drude–Lorentz model and Fresnel equations were used to calculate the dielectric properties, sheet resistance, absorption and transmission of the films. These ultrathin nickel silicide films have excellent optoelectronic properties for p-type contacts with optical transparencies up to 80% and sheet resistance as low as ∼0.15 µΩ cm. Furthermore, it was shown that the use of a simple anti-reflection (AR) coating can recover most of the reflected light approaching the values of a standard Si solar cell with the same AR coating. Overall, the combination of ultra-low thickness, high transmittance, low sheet resistance and ability to recover the reflected light by utilizing standard AR coating makes them ideal for utilization in silicon based photovoltaic technologies as a p-type transparent conductor. (paper)

Electrical and optical properties of sub-10 nm nickel silicide films for silicon solar cells

Science.gov (United States)

Brahmi, Hatem; Ravipati, Srikanth; Yarali, Milad; Shervin, Shahab; Wang, Weijie; Ryou, Jae-Hyun; Mavrokefalos, Anastassios

2017-01-01

Highly conductive and transparent films of ultra-thin p-type nickel silicide films have been prepared by RF magnetron sputtering of nickel on silicon substrates followed by rapid thermal annealing in an inert environment in the temperature range 400-600 °C. The films are uniform throughout the wafer with thicknesses in the range of 3-6 nm. The electrical and optical properties are presented for nickel silicide films with varying thickness. The Drude-Lorentz model and Fresnel equations were used to calculate the dielectric properties, sheet resistance, absorption and transmission of the films. These ultrathin nickel silicide films have excellent optoelectronic properties for p-type contacts with optical transparencies up to 80% and sheet resistance as low as ~0.15 µΩ cm. Furthermore, it was shown that the use of a simple anti-reflection (AR) coating can recover most of the reflected light approaching the values of a standard Si solar cell with the same AR coating. Overall, the combination of ultra-low thickness, high transmittance, low sheet resistance and ability to recover the reflected light by utilizing standard AR coating makes them ideal for utilization in silicon based photovoltaic technologies as a p-type transparent conductor.

Extraction of hafnium by 1-phenyl-3-methyl-4-benzoyl-5-pyralozone from aqueous-alcoholic solutions

International Nuclear Information System (INIS)

Hala, J.; Prihoda, J.

1975-01-01

Extraction of hafnium by 1-phenyl-3-methyl-4-benzoyl-5-pyrazolone (HL) in benzene, toluene, chloroform and tetrachloromethane from aqueous-alcoholic solutions of the formal acidity of 2M-HClO 4 was studied. Methyl, ethyl, n- and isopropyl, tert-butyl and allyl alcohol as well as ethylene glycol monomethyl ether and propylene glycol were used as organic components of the mixed aqueous-organic phase. Their presence in some cases resulted in a synergic increase in the distribution ratio of hafnium. The increase is interpreted using the results of a slope analysis and measurements of the alcohol distribution and the relative permittivity of the organic phase. It is suggested that HfL 4 molecules were solvated by alcohol molecules in the organic phase. At high alcohol concentration synergism changed into antagonism. This was caused by changes in the distribution of HL and its interaction with the alcohol in the organic phase. (author)

Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate

International Nuclear Information System (INIS)

Liu, Hsi-Wen; Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Chang, Ting-Chang; Chen, Ching-En; Tseng, Tseung-Yuen; Lin, Chien-Yu; Cheng, Osbert; Huang, Cheng-Tung; Ye, Yi-Han

2016-01-01

This work investigates the effect on hot carrier degradation (HCD) of doping zirconium into the hafnium oxide high-k layer in the nanoscale high-k/metal gate n-channel metal-oxide-semiconductor field-effect-transistors. Previous n-metal-oxide semiconductor-field effect transistor studies demonstrated that zirconium-doped hafnium oxide reduces charge trapping and improves positive bias temperature instability. In this work, a clear reduction in HCD is observed with zirconium-doped hafnium oxide because channel hot electron (CHE) trapping in pre-existing high-k bulk defects is the main degradation mechanism. However, this reduced HCD became ineffective at ultra-low temperature, since CHE traps in the deeper bulk defects at ultra-low temperature, while zirconium-doping only passivates shallow bulk defects.

Determination of hafnium with the inductively coupled plasma (ICP)

International Nuclear Information System (INIS)

Wuensch, G.; Pose, K.

1985-01-01

The relative intensities of 198 hafnium lines in the Ar-ICP are listed. Spectral interference tables are given for the 9 analytically best lines, covering the range of +-60 pm around the Hf-lines. They include measured (not calculated) data of the interferent equivalent concentrations (IEC) and the critical concentration ratios (CCR) for 115 lines of all 34 possibly interfering elements. In many cases, these IEC- or CCR-data differ by 1 or 2 orders of magnitude from those calculated from intensities observed in the NBS-copper arc. Since no intense Hf-line is free from spectral interferences, examples are given for the calculation of the most suitable line for a known matrix. (orig.) [de

Thermal expansion and elastic moduli of the silicide based intermetallic alloys Ti5Si3(X) and Nb5Si3

International Nuclear Information System (INIS)

Zhang, L.; Wu, J.

1997-01-01

Silicides are among those potential candidates for high temperature application because of their high melting temperature, low density and good oxidation resistance. Recent interest is focused on molybdenum silicides and titanium silicides. Extensive investigation has been carried out on MoSi 2 , yet comparatively less work was performed on titanium silicides such as Ti 5 Si 3 and Ti 3 and TiSi 2 which are of lower density than MoSi 2 . Fundamental understanding of the titanium silicides' properties for further evaluation their potential for practical application are thus needed. The thermal expansion coefficients and elastic moduli of intermetallic compounds are two properties important for evaluation as a first step. The thermal expansion determines the possible stress that might arise during cooling for these high melting point compounds, which is crucial to the preparation of defect free specimens; and the elastic moduli are usually reflections of the cohesion in crystal. In Frommeyer's work and some works afterwards, the coefficients of thermal expansion were measured on both polycrystalline and single crystal Ti 5 Si 3 . The elastic modulus of polycrystalline Ti 5 Si 3 was measured by Frommeyer and Rosenkranz. However, in the above works, the referred Ti 5 Si 3 was the binary one, no alloying effect has been reported on this matter. Moreover, the above parameters (coefficient of thermal expansion and elastic modulus) of Nb 5 Si 3 remain unreported so far. In this paper, the authors try to extend the knowledge of alloyed Ti 5 Si 3 compounds with Nb and Cr additions. Results on the coefficients of thermal expansion and elastic moduli of Ti 5 Si 3 compounds and Nb 5 Si 3 are presented and the discussion is focused on the alloying effect

Core-hole effects in the x-ray-absorption spectra of transition-metal silicides

NARCIS (Netherlands)

WEIJS, PJW; CZYZYK, MT; VANACKER, JF; SPEIER, W; GOEDKOOP, JB; VANLEUKEN, H; HENDRIX, HJM; DEGROOT, RA; VANDERLAAN, G; BUSCHOW, KHJ; WIECH, G; FUGGLE, JC

1990-01-01

We report systematic differences between the shape of the Si K x-ray-absorption spectra of transition-metal silicides and broadened partial densities of Si p states. We use a variety of calculations to show that the origin of these discrepancies is the core-hole potential appropriate to the final

A Study on Characterization of Light-Induced Electroless Plated Ni Seed Layer and Silicide Formation for Solar Cell Application

Science.gov (United States)

Takaloo, Ashkan Vakilipour; Joo, Seung Ki; Es, Firat; Turan, Rasit; Lee, Doo Won

2018-03-01

Light-induced electroless plating (LIEP) is an easy and inexpensive method that has been widely used for seed layer deposition of Nickel/Copper (Ni/Cu)-based metallization in the solar cell. In this study, material characterization aspects of the Ni seed layer and Ni silicide formation at different bath conditions and annealing temperatures on the n-side of a silicon diode structure have been examined to achieve the optimum cell contacts. The effects of morphology and chemical composition of Ni film on its electrical conductivity were evaluated and described by a quantum mechanical model. It has been found that correlation exists between the theoretical and experimental conductivity of Ni film. Residual stress and phase transformation of Ni silicide as a function of annealing temperature were evaluated using Raman and XRD techniques. Finally, transmission line measurement (TLM) technique was employed to determine the contact resistance of Ni/Si stack after thermal treatment and to understand its correlation with the chemical-structural properties. Results indicated that low electrical resistive mono-silicide (NiSi) phase as low as 5 mΩ.cm2 was obtained.

Atom-vacancy ordering and magnetic susceptibility of nonstoichiometric hafnium carbide

International Nuclear Information System (INIS)

Gusev, A.I.; Zyryanova, A.N.

1999-01-01

Experimental results on magnetic susceptibility of nonstoichiometric hafnium carbide HfC y (0.6 0.71 , HfC 0.78 and HfC 0.83 in the range of 870-930 K the anomalies are revealed which are associated with superstructure short-range ordering in a non-metallics sublattice. It is shown that a short-range order in HfC 0.71 and HfC 0.78 carbides corresponds to Hf 3 C 2 ordered phase, and in HfC 0.83 carbide - to Hf 6 C 5 ordered phase. HfC 0.78 carbide is found to possesses zero magnetic susceptibility in temperature range 910-980 K [ru

Controlling the formation and stability of ultra-thin nickel silicides - An alloying strategy for preventing agglomeration

Science.gov (United States)

Geenen, F. A.; van Stiphout, K.; Nanakoudis, A.; Bals, S.; Vantomme, A.; Jordan-Sweet, J.; Lavoie, C.; Detavernier, C.

2018-02-01

The electrical contact of the source and drain regions in state-of-the-art CMOS transistors is nowadays facilitated through NiSi, which is often alloyed with Pt in order to avoid morphological agglomeration of the silicide film. However, the solid-state reaction between as-deposited Ni and the Si substrate exhibits a peculiar change for as-deposited Ni films thinner than a critical thickness of tc = 5 nm. Whereas thicker films form polycrystalline NiSi upon annealing above 450 ° C , thinner films form epitaxial NiSi2 films that exhibit a high resistance toward agglomeration. For industrial applications, it is therefore of utmost importance to assess the critical thickness with high certainty and find novel methodologies to either increase or decrease its value, depending on the aimed silicide formation. This paper investigates Ni films between 0 and 15 nm initial thickness by use of "thickness gradients," which provide semi-continuous information on silicide formation and stability as a function of as-deposited layer thickness. The alloying of these Ni layers with 10% Al, Co, Ge, Pd, or Pt renders a significant change in the phase sequence as a function of thickness and dependent on the alloying element. The addition of these ternary impurities therefore changes the critical thickness tc. The results are discussed in the framework of classical nucleation theory.

Study of optical and luminescence properties of silicon — semiconducting silicide — silicon multilayer nanostructures

International Nuclear Information System (INIS)

Galkin, N.G.; Galkin, K.N.; Dotsenko, S.A.; Goroshko, D.L.; Shevlyagin, A.V.; Chusovitin, E.A.; Chernev, I.M.

2017-01-01

By method of in situ differential spectroscopy it was established that at the formation of monolayer Fe, Cr, Ca, Mg silicide and Mg stannide islands on the atomically clean silicon surface an appearance of loss peaks characteristic for these materials in the energy range of 1.1-2.6 eV is observed. An optimization of growth processes permit to grow monolithic double nanoheterostructures (DNHS) with embedded Fe, Cr and Ca nanocrystals, and also polycrystalline DNHS with NC of Mg silicide and Mg stannide and Ca disilicide. By methods of optical spectroscopy and Raman spectroscopy it was shown that embedded NC form intensive peaks in the reflectance spectra at energies up to 2.5 eV and Raman peaks. In DNS with β-FeSi2 NC a photoluminescence and electroluminescence at room temperature were firstly observed.

Hafnium carbide nanocrystal chains for field emitters

International Nuclear Information System (INIS)

Tian, Song; Li, Hejun; Zhang, Yulei; Ren, Jincui; Qiang, Xinfa; Zhang, Shouyang

2014-01-01

A hafnium carbide (HfC) nanostructure, i.e., HfC nanocrystal chain, was synthesized by a chemical vapor deposition (CVD) method. X-ray diffractometer, field-emission scanning electron microscope, transmission electron microscope, and energy-dispersive X-ray spectrometer were employed to characterize the product. The synthesized one-dimensional (1D) nanostructures with many faceted octahedral nanocrystals possess diameters of tens of nanometers to 500 nm and lengths of a few microns. The chain-like structures possess a single crystalline structure and preferential growth direction along the [1 0 0] crystal orientation. The growth of the chains occurred through the vapor–liquid–solid process along with a negative-feedback mechanism. The field emission (FE) properties of the HfC nanocrystal chains as the cold cathode emitters were examined. The HfC nanocrystal chains display good FE properties with a low turn-on field of about 3.9 V μm −1 and a high field enhancement factor of 2157, implying potential applications in vacuum microelectronics.

Simplified method for gravimetric determination of zirconium or hafnium with α-hydroxy carboxylic acids

International Nuclear Information System (INIS)

Barbieri, R.S.; Rocha, J.C.; Terra, V.R.; Marques Netto, A.

1989-01-01

The conditions for gravimetric determination of zirconium or hafnium by glicoloc acids derivatives were studied by thermogravimetric analysis. The method utilized shownd that after precipitation, washing and drying of precipitates at 150 o C, the resulting solid was weighed in the form of [M (RCH(OH)COO) 4 ] (M = Zr, Hf; R + C 6 H 5 , β-C 10 H 7 , p-BrC 6 H 4 ). (author)

Complexonometric determination of hafnium (4) in the presence of europium(3) or tantalum(5)

International Nuclear Information System (INIS)

Oziashvili, E.D.; Ehsakiya, K.E.; Sirakanyan, N.M.

1986-01-01

Complexonometric determination of hafnium in the presence of Ta or Eu in samples which can be decomposed by acids, i.e. in double borides has been investigated. Initial solutions are prepared by fusing with K 2 S 2 O 8 excess, the fusion was leached by hot water, H 2 SO L 4 was added and Hf was titrated by complexone 3 in the presence of xylenol orange

Investigation of interaction of zirconium and hafnium tetrafluorides with strontium fluoride

International Nuclear Information System (INIS)

Ratnikova, I.D.; Korenev, Yu.M.; Novoselova, A.V.

1980-01-01

Diagrams of the condensated state of systems SrF 2 -EF 4 have been plotted, where E represents Zr, Hf. In these systems, three intermediate compounds of Sr 3 EF 10 , Sr 2 EF 8 and Sr EF 6 compositions are formed. All those compounds melt incongruently at temperatures of 982, 865 and 750 deg C, respectively - zirconium salt; at temperatures of 1000, 900 and 820 deg C - hafnium salts. Fluoro-metallates of composition 2:1, and 1:1, exist in two polymorphic forms. Tetrafluorides were found to dissolve in strontium fluoride: they form solid solutions having fluorite structure

Role of Ti 3 Al/silicides on tensile properties of Timetal 834 at ...

Indian Academy of Sciences (India)

Extremely fine coherent precipitates of ordered Ti3Al and relatively coarse incoherent precipitates of 2 silicide exist together in the near -titanium alloy, Timetal 834, in the dual phase matrix of primary and transformed . In order to assess the role of these precipitates, three heat treatments viz. WQ, WQ–A and WQ–OA, ...

Prospect of Uranium Silicide fuel element with hypostoichiometric (Si ≤3.7%)

International Nuclear Information System (INIS)

Suripto, A.; Sardjono; Martoyo

1996-01-01

An attempt to obtain high uranium-loading in silicide dispersion fuel element using the fabrication technology applicable nowadays can reach Uranium-loading slightly above 5 gU/cm 3 . It is difficult to achieve a higher uranium-loading than that because of fabricability constraints. To overcome those difficulties, the use of uranium silicide U 3 Si based is considered. The excess of U is obtained by synthesising U 3 Si 2 in Si-hypostoichiometric stage, without applying heat treatment to the ingot as it can generate undesired U 3 Si. The U U will react with the matrix to form U al x compound, that its pressure is tolerable. This experiment is to consider possibilities of employing the U 3 Si 2 as nuclear fuel element which have been performed by synthesising U 3 Si 2 -U with the composition of 3.7 % weigh and 3 % weigh U. The ingot was obtained and converted into powder form which then was fabricated into experimental plate nuclear fuel element. The interaction between free U and Al-matrix during heat-treatment is the rolling phase of the fuel element was observed. The study of the next phase will be conducted later

Correlations between nuclear data and integral slab experiments: the case of hafnium

International Nuclear Information System (INIS)

Palau, J.M.

1999-01-01

The aim of this work was to evaluate how much integral slab experiments can both reduce discrepancies between experimental results and calculations, and improve the knowledge of hafnium isotopes neutronic parameters by an adapted sensitivity and uncertainty method. A statistical approach, based on the generalized least squares method and perturbation theory, has been incorporated into our calculation system in order to deduce microscopic cross-section adjustments from observed integral measurements on this particular 'mock-up' reactor.In this study it has been established that the correlations between integral parameters and hafnium capture cross-sections enable specific variations in the region of resolved resonances at the level of multigroup and punctual cross-sections recommended data (JEF-2.2 evaluation) to be highlighted. The use of determinist methods together with Monte Carlo- type simulations enabled a depth analysis of the modelling approximations to be carried out. Furthermore, the sensitivity coefficient validation technique employed leads to a reliable assessment of the quality of the new basic nuclear data. In this instance, the adjustments proposed for certain isotope 177 Hf resonance parameters reduce, after error propagation, by 3 to 5 per cent the difference between experimental results and calculations related to this absorbent's efficiency. Beyond this particular application, the qualification methodology integrated in our calculation system should enable other basic sizing parameters to be treated (chemical / geometric data or other unexplored nuclear data) to make technological requirements less stringent. (author)

Neutronic study on conversion of SAFARI-1 to LEU silicide fuel

International Nuclear Information System (INIS)

Ball, G.; Pond, R.; Hanan, N.; Matos, J.

1995-01-01

This paper marks the initial study into the technical and economic feasibility of converting the SAFARI-1 reactor in South Africa to LEU silicide fuel. Several MTR assembly geometries and LEU uranium densities have been studied and compared with MEU and HEU fuels. Two factors of primary importance for conversion of SAFARI-1 to LEU fuel are the economy of the fuel cycle and the performance of the incore and excore irradiation positions

Laser coating of hafnium on Ti6Al4 for biomedical applications

CSIR Research Space (South Africa)

Phume, L

2012-12-01

Full Text Available Al4V FOR BIOMEDICAL APPLICATIONS Lerato Phume 1, 2, S.L. Pityana 1, 2, C. Meacock 1, A.P.I Popoola 2 1. National Laser Centre, Council for Scientific and Industrial Research, P.O. Box 395, Pretoria, 0001, South Africa 2. Department of Chemical... and Metallurgical Engineering, Tshwane University of Technology, Private Bag X 680, Pretoria, 0001, South Africa (b) (c) (e) To investigate laser surface coating of Ti6Al4V with preplaced Hafnium powder, to determine the influence of the energy density...

Techno-economic study on conversion of SAFARI-1 to LEU silicide fuel

International Nuclear Information System (INIS)

Ball, G.; Malherbe, F.J.

2004-01-01

This paper marks the conclusion of the techno-economic study into the conversion of SAFARI-1 reactor in South Africa to LEU silicide fuel. Several different fuel types were studied and their characteristics compared to the current HEU fuel. The technical feasibility of operating SAFARI-1 with the different fuels as well as the overall economic impact of the fuels is discussed and conclusions drawn.(author)

Preparation, structure and properties of hafnium compounds in the system Hf-C-N-O

International Nuclear Information System (INIS)

Brundiers, G.D.

1975-08-01

Highly dense, homogenous and single phase hafnium carbonitride samples (with low oxygen content) were prepared in the whole concentration range of the ternary cubic carbonitrides. Stoichiometric hafnium oxicarbides were also prepared within the range of solubility. The procedure involved the hot pressing of powders of HfC, HfN, Hf, Hf-Oxide and carbon at temperatures of 3,000 0 C and pressures up to 550 kpf/cm 2 using a novel technique. Small single crystals of slightly substoichiometric HfN were also repared. The densification of the powders was studied as a function of the non-metal concentration. Carbonitrides with N/Hf ratio of 0.37 were prepared in a high temperature autoclave operating at medium pressures by the reaction of HfC with nitrogen. All the samples were characterized by density measurements, chemical, X-ray and metallographic analysis and in some cases with the aid of quantitative metallography and microprobe analysis. Typical properties investigated were lattice parameter, thermal expansion, microhardness and electrical resistivity as function of the non-metal content. For specific concentrations extreme values in the properties are attained. With the aid of the valence electron concentration (VEC) parameter, the properties can be correlated with the density of states of electrons at the Fermi level. (orig./HK) [de

Neutronic calculations of PARR-1 cores using LEU silicide fuel

International Nuclear Information System (INIS)

Arshad, M.; Bakhtyar, S.; Hayat, T.; Salahuddin, A.

1991-08-01

Detailed neutronic calculations have been carried out for different PARR-1 cores utilizing low enriched uranium (LEU) silicide fuel and operating at an upgraded power of 9 MW. The calculations include the search for critical loadings in open and stall ends of the pool, neutronic analysis of the first full equilibrium core and calculations cores. The burnup study of inventory have also been carried out. Further, the reactivity coefficients of the first full power operation core are evaluated for use in the accident analysis. 14 figs. (author)

Moissanite (SiC) with metal-silicide and silicon inclusions from tuff of Israel: Raman spectroscopy and electron microscope studies

Science.gov (United States)

Dobrzhinetskaya, Larissa; Mukhin, Pavel; Wang, Qin; Wirth, Richard; O'Bannon, Earl; Zhao, Wenxia; Eppelbaum, Lev; Sokhonchuk, Tatiana

2018-06-01

Here, we present studies of natural SiC that occurs in situ in tuff related to the Miocene alkaline basalt formation deposited in northern part of Israel. Raman spectroscopy, SEM and FIB-assisted TEM studies revealed that SiC is primarily hexagonal polytypes 4H-SiC and 6H-SiC, and that the 4H-SiC polytype is the predominant phase. Both SiC polytypes contain crystalline inclusions of silicon (Sio) and inclusions of metal-silicide with varying compositions (e.g. Si58V25Ti12Cr3Fe2, Si41Fe24Ti20Ni7V5Zr3, and Si43Fe40Ni17). The silicides crystal structure parameters match Si2TiV5 (Pm-3m space group, cubic), FeSi2Ti (Pbam space group, orthorhombic), and FeSi2 (Cmca space group, orthorhombic) respectively. We hypothesize that SiC was formed in a local ultra-reduced environment at respectively shallow depths (60-100 km), through a reaction of SiO2 with highly reducing fluids (H2O-CH4-H2-C2H6) arisen from the mantle "hot spot" and passing through alkaline basalt magma reservoir. SiO2 interacting with the fluids may originate from the walls of the crustal rocks surrounding this magmatic reservoir. This process led to the formation of SiC and accompanied by the reducing of metal-oxides to native metals, alloys, and silicides. The latter were trapped by SiC during its growth. Hence, interplate "hot spot" alkali basalt volcanism can now be included as a geological environment where SiC, silicon, and silicides can be found.

Postirradiation analysis of experimental uranium-silicide dispersion fuel plates

International Nuclear Information System (INIS)

Hofman, G.L.; Neimark, L.A.

1985-01-01

Low-enriched uranium silicide dispersion fuel plates were irradiated to maximum burnups of 96% of 235 U. Fuel plates containing 33 v/o U 3 Si and U 3 Si 2 behaved very well up to this burnup. Plates containing 33 v/o U 3 Si-Al pillowed between 90 and 96% burnup of the fissile atoms. More highly loaded U 3 Si-Al plates, up to 50 v/o were found to pillow at lower burnups. Plates containing 40 v/o U 3 Si showed an increase swelling rate around 85% burnup. 5 refs., 10 figs

Systematic investigation of electromagnetic properties of all stable hafnium isotopes

International Nuclear Information System (INIS)

Napiorkowski, T.J.; Choinski, J.; Czosnyka, T.; Iwanicki, J.; Kownacki, J.; Zemlo, L.; Srebrny, J.; Starosta, K.; Boer, J. de.; Gollwitzer, A.; Loewe, M.; Wuerkner, M.; Guenther, C.; Weber, T.; Hagemann, G.; Sletten, G.

1996-01-01

In a systematic investigation of the electromagnetic structure of hafnium stable isotopes enriched targets of 176, 177, 178, 179, 180 Hf were Coulomb exciting using: 67 MeV 19 F beam from NBITAL FN Tandem, 125 MeV 32 S beam from MP Tandem in Accelerator Laboratory LMU and TU Munich, 225 MeV 58 Ni beam from NBITAL FN Tandem plus 2 Liniac Boosters complex. Scattered particle-gamma as well as p-γ-γ coincidence were registered. A further simultaneous analysis of Coulomb excitation cross section as a function of scattering angle of 19 F, 32 S, 58 Ni projectiles should be sufficient to deduce reduced probabilities of E2 transitions in ground state band

Impact of Nickel silicide Rear Metallization on Series Resistance of Crystalline Silicon Solar Cells

KAUST Repository

Bahabry, Rabab R; Hanna, Amir N; Kutbee, Arwa T; Gumus, Abdurrahman; Hussain, Muhammad Mustafa

2018-01-01

the electrical characteristics of nickel mono-silicide (NiSi)/Cu-Al ohmic contact on the rear side of c-Si solar cells. We observe a significant enhancement in the fill factor of around 6.5% for NiSi/Cu-Al rear contacts leading to increasing the efficiency by 1.2

Highly substituted zirconium and hafnium cyclopentadienyl bifunctional β-diketiminate complexes – Synthesis, structure, and catalytic activity towards ethylene polymerization

Czech Academy of Sciences Publication Activity Database

Havlík, A.; Lamač, Martin; Pinkas, Jiří; Varga, Vojtěch; Růžička, A.; Olejník, R.; Horáček, Michal

2015-01-01

Roč. 786, JUN 2015 (2015), s. 71-80 ISSN 0022-328X R&D Projects: GA ČR GAP106/10/0924 Institutional support: RVO:61388955 Keywords : Zirconium * Hafnium * Cyclopentadienyl Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.336, year: 2015

Waste Photovoltaic Panels for Ultrapure Silicon and Hydrogen through the Low-Temperature Magnesium Silicide.

Czech Academy of Sciences Publication Activity Database

Dytrych, Pavel; Bumba, Jakub; Kaštánek, František; Fajgar, Radek; Koštejn, Martin; Šolcová, Olga

Roč. 56, č. 45 ( 2017 ), s. 12863-12869 ISSN 0888-5885 R&D Projects: GA ČR GA15-14228S Institutional support: RVO:67985858 Keywords : magnesium silicide * waste photovoltaic panels * ultrapure silicon Subject RIV: CI - Industrial Chemistry, Chemical Engineering OBOR OECD: Chemical process engineering Impact factor: 2.843, year: 2016

Progress in doping of ruthenium silicide (Ru2Si3)

International Nuclear Information System (INIS)

Vining, C.B.; Allevato, C.E.

1992-01-01

This paper reports that ruthenium silicide (Ru 2 Si 3 ) is currently under development as a promising thermoelectric material suitable for space power applications. Key to realizing the potentially high figure of merit values of this material is the development of appropriate doping techniques. In this study, manganese and iridium have been identified as useful p- and n-type dopants, respectively. Resistivity values have been reduced by more than 3 orders of magnitude. Anomalous Hall effect results, however, complicate interpretation of some of the results and further effort is required to achieve optimum doping levels

Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

International Nuclear Information System (INIS)

Zhou, Dayu; Xu, Jin; Li, Qing; Guan, Yan; Cao, Fei; Dong, Xianlin; Müller, Johannes; Schenk, Tony; Schröder, Uwe

2013-01-01

Hafnium oxide based ferroelectric thin films have shown potential as a promising alternative material for non-volatile memory applications. This work reports the switching stability of a Si-doped HfO 2 film under bipolar pulsed-field operation. High field cycling causes a “wake-up” in virgin “pinched” polarization hysteresis loops, demonstrated by an enhancement in remanent polarization and a shift of negative coercive voltage. The rate of wake-up is accelerated by either reducing the frequency or increasing the amplitude of the cycling field. We suggest de-pinning of domains due to reduction of the defect concentration at bottom electrode interface as origin of the wake-up

Correlations between nuclear data and results of integral slab experiments. Case of hafnium

International Nuclear Information System (INIS)

Palau, J.M.

1997-01-01

The aim of this thesis was to evaluate how much integral slab experiments can both reduce discrepancies between experimental results and calculations, and improve the knowledge of hafnium isotopes neutronic parameters by an adapted sensitivity and uncertainty method. A statistical approach, based on the generalized least squares method and perturbation theory, has been incorporated into our calculation system in order to deduce microscopic cross-section adjustments from observed integral measurements on this particular 'mock-up' reactor. In this study it has been established that the correlations between integral parameters and hafnium capture cross-sections enable specific variations in the region of resolved resonances at the level of multigroup and punctual cross-sections recommended data (JEF-2.2 evaluation) to be highlighted. The use of determinist methods (APOLLO2 code) together with Monte Carlo- type simulations (TRIPOLI4 code) enabled a depth analysis of the modelling approximations to be carried out. Furthermore, the sensitivity coefficient validation technique employed leads to a reliable assessment of the quality of the new basic nuclear data. In this instance, the adjustments proposed for certain isotope 177 Hf resonance parameters reduce, after error propagation, by 3 to 5 per cent the difference between experimental results and calculations related to this absorbent's efficiency. Beyond this particular application, the qualification methodology integrated in our calculation system should enable other basic sizing parameters to be treated (chemical / geometric data or other unexplored nuclear data) to make technological requirements less stringent. (author)

Extraction of hafnium with chelating agents from aqueous-alcoholic solutions

International Nuclear Information System (INIS)

Hala, J.; Prihoda, J.

1975-01-01

The extraction was studied of hafnium into solutions of N-benzoyl-N-phenylhydroxylamine, 2-thenoyltrifluoroacetone and di-n-butylphosphoric acid in benzene, toluene, chloroform and tetrachloromethane from aqueous alcoholic solutions with a formal acidity of 2M-HClO 4 . Methyl-, ethyl-, n- and isopropyl- and tert-butyl alcohol were used as organic components in the mixed aqueous-organic phase. In the extraction into N-benzoyl-N-phenylhydroxylamine the presence of the alcohols resulted in synergic effects analogous to the previously described extraction by substituted benzoylpyrazolone. With the other two extractants, the effect of the alcohols was antagonistic, due to the interaction of alcohol or water with the reagent in the organic phase, and to the decrease in the reagent distribution constant. (author)

Optical metrology of Ni and NiSi thin films used in the self-aligned silicidation process

International Nuclear Information System (INIS)

Kamineni, V. K.; Bersch, E. J.; Diebold, A. C.; Raymond, M.; Doris, B. B.

2010-01-01

The thickness-dependent optical properties of nickel metal and nickel monosilicide (NiSi) thin films, used for self-aligned silicidation process, were characterized using spectroscopic ellipsometry. The thickness-dependent complex dielectric function of nickel metal films is shown to be correlated with the change in Drude free electron relaxation time. The change in relaxation time can be traced to the change in grain boundary (GB) reflection coefficient and grain size. A resistivity based model was used as the complementary method to the thickness-dependent optical model to trace the change in GB reflection coefficient and grain size. After silicidation, the complex dielectric function of NiSi films exhibit non-Drude behavior due to superimposition of interband absorptions arising at lower frequencies. The Optical models of the complete film stack were refined using x-ray photoelectron spectroscopy, Rutherford backscattered spectroscopy, and x-ray reflectivity (XRR).

Studies of high-K isomers in hafnium nuclei

International Nuclear Information System (INIS)

Sletten, G.; Gjoerup, N.L.

1991-01-01

K-isomeric states built on high-Ω Nilsson orbitals from deformation-aligned high-j levels near the Fermi surface are found to cluster in the neutron rich Hf, W and Os nuclei. It has been shown that some of the high seniority states of this type have decay properties that indicate strong mixing of configurations and that in Osmium nuclei γ-softness cause strong deviations from the well established K-selection rule. Also in the Hafnium nuclei is the expected forbiddenness in isomeric decays an order of magnitude smaller than expected from the K-selection rule. A new 9 quasiparticle isomer has been discovered in 175 Hf at I=57/2. This isomer has the anomalous decay as the dominant mode. Other lower seniority states are also identified. At spin 35/2 and 45/2 the deformation aligned states become yrast, but the structure of the yrast line to even higher spins is not yet understood. (author)

Luminescent determination of zirconium and hafnium with myricetin

International Nuclear Information System (INIS)

Talipov, Sh.T.; Zel'tser, L.E.; Morozova, L.A.; Tashkhodzhaev, A.T.

1978-01-01

Reaction of formation of 3, 5, 7, 3', 4', 5' - hexaoxiflavone - myricetin complexes with zirconium and hafnium ions has been the basis for development of luminescent method of determining these elements. Optimum conditions for complexing have been determined. For Hf they are : 8-9 HCl concentration, maximum fluorescence wave length (lambda fl.)of 520 nm, wave length of exciting light (lambda el) of 436 nm, for Zr lambda fl = 536nm, lambda el = 436 nm. Stable fluorescence establishes after 25 min. for Zr and after 15 min for Hf in the presence of 40% ethanol. Usage of various camouflage agents has permitted to attain high selectivity of the method. Possibility for determination of Zr with myricetin in the presence of a 10-time excess of Hf, Cr, Cu, 50-time excess of Mo and Ti is shown. Sensitivity of Zr determination is 2.0x10 μg -2 /ml, for Hf it is 9.0x10 μg -3 and mineral waters

Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors

Directory of Open Access Journals (Sweden)

Sheng-Po Chang

2012-01-01

Full Text Available We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (α-HfIZO thin film transistors (TFTs. Co-sputtering-processed α-HfIZO thin films have shown an amorphous phase in nature. We could modulate the In, Hf, and Zn components by changing the co-sputtering power. Additionally, the chemical composition of α-HfIZO had a significant effect on reliability, hysteresis, field-effect mobility (μFE, carrier concentration, and subthreshold swing (S of the device. Our results indicated that we could successfully and easily fabricate α-HfIZO TFTs with excellent performance by the co-sputtering process. Co-sputtering-processed α-HfIZO TFTs were fabricated with an on/off current ratio of ~106, higher mobility, and a subthreshold slope as steep as 0.55 V/dec.

Fuel element burnup measurements for the equilibrium LEU silicide RSG GAS (MPR-30) core under a new fuel management strategy

International Nuclear Information System (INIS)

Pinem, Surian; Liem, Peng Hong; Sembiring, Tagor Malem; Surbakti, Tukiran

2016-01-01

Highlights: • Burnup measurement of fuel elements comprising the new equilibrium LEU silicide core of RSG GAS. • The burnup measurement method is based on a linear relationship between reactivity and burnup. • Burnup verification was conducted using an in-house, in-core fuel management code BATAN-FUEL. • A good agreement between the measured and calculated burnup was confirmed. • The new fuel management strategy was confirmed and validated. - Abstract: After the equilibrium LEU silicide core of RSG GAS was achieved, there was a strong need to validate the new fuel management strategy by measuring burnup of fuel elements comprising the core. Since the regulatory body had a great concern on the safety limit of the silicide fuel element burnup, amongst the 35 burnt fuel elements we selected 22 fuel elements with high burnup classes i.e. from 20 to 53% loss of U-235 (declared values) for the present measurements. The burnup measurement method was based on a linear relationship between reactivity and burnup where the measurements were conducted under subcritical conditions using two fission counters of the reactor startup channel. The measurement results were compared with the declared burnup evaluated by an in-house in-core fuel management code, BATAN-FUEL. A good agreement between the measured burnup values and the calculated ones was found within 8% uncertainties. Possible major sources of differences were identified, i.e. large statistical errors (i.e. low fission counters’ count rates), variation of initial U-235 loading per fuel element and accuracy of control rod indicators. The measured burnup of the 22 fuel elements provided the confirmation of the core burnup distribution planned for the equilibrium LEU silicide core under the new fuel management strategy.

Understanding and Improving High-Temperature Structural Properties of Metal-Silicide Intermetallics

Energy Technology Data Exchange (ETDEWEB)

Bruce S. Kang

2005-10-10

The objective of this project was to understand and improve high-temperature structural properties of metal-silicide intermetallic alloys. Through research collaboration between the research team at West Virginia University (WVU) and Dr. J.H. Schneibel at Oak Ridge National Laboratory (ORNL), molybdenum silicide alloys were developed at ORNL and evaluated at WVU through atomistic modeling analyses, thermo-mechanical tests, and metallurgical studies. In this study, molybdenum-based alloys were ductilized by dispersing MgAl2O4 or MgO spinel particles. The addition of spinel particles is hypothesized to getter impurities such as oxygen and nitrogen from the alloy matrix with the result of ductility improvement. The introduction of fine dispersions has also been postulated to improve ductility by acting as a dislocation source or reducing dislocation pile-ups at grain boundaries. The spinel particles, on the other hand, can also act as local notches or crack initiation sites, which is detrimental to the alloy mechanical properties. Optimization of material processing condition is important to develop the desirable molybdenum alloys with sufficient room-temperature ductility. Atomistic analyses were conducted to further understand the mechanism of ductility improvement of the molybdenum alloys and the results showed that trace amount of residual oxygen may be responsible for the brittle behavior of the as-cast Mo alloys. For the alloys studied, uniaxial tensile tests were conducted at different loading rates, and at room and elevated temperatures. Thermal cycling effect on the mechanical properties was also studied. Tensile tests for specimens subjected to either ten or twenty thermal cycles were conducted. For each test, a follow-up detailed fractography and microstructural analysis were carried out. The test results were correlated to the size, density, distribution of the spinel particles and processing time. Thermal expansion tests were carried out using thermo

Development of molecular dynamics potential for uranium silicide fuels

Energy Technology Data Exchange (ETDEWEB)

Yu, Jianguo; Zhang, Yongfeng; Hales, Jason D.

2016-09-01

Use of uranium–silicide (U-Si) in place of uranium dioxide (UO2) is one of the promising concepts being proposed to increase the accident tolerance of nuclear fuels. This is due to a higher thermal conductivity than UO2 that results in lower centerline temperatures. U-Si also has a higher fissile density, which may enable some new cladding concepts that would otherwise require increased enrichment limits to compensate for their neutronic penalty. However, many critical material properties for U-Si have not been determined experimentally. For example, silicide compounds (U3Si2 and U3Si) are known to become amorphous under irradiation. There was clear independent experimental evidence to support a crystalline to amorphous transformation in those compounds. However, it is still not well understood how the amorphous transformation will affect on fuel behavior. It is anticipated that modeling and simulation may deliver guidance on the importance of various properties and help prioritize experimental work. In order to develop knowledge-based models for use at the engineering scale with a minimum of empirical parameters and increase the predictive capabilities of the developed model, inputs from atomistic simulations are essential. First-principles based density functional theory (DFT) calculations will provide the most reliable information. However, it is probably not possible to obtain kinetic information such as amorphization under irradiation directly from DFT simulations due to size and time limitations. Thus, a more feasible way may be to employ molecular dynamics (MD) simulation. Unfortunately, so far no MD potential is available for U-Si to discover the underlying mechanisms. Here, we will present our recent progress in developing a U-Si potential from ab initio data. This work is supported by the Nuclear Energy Advanced Modeling and Simulation (NEAMS) program funded by the U.S. Department of Energy, Office of Nuclear Energy.

Differential perturbed angular correlation: use of physico-chemical study of some hafnium complexes derivates of hydroxy acids and EDTA

International Nuclear Information System (INIS)

Silveira, J.G. da.

1981-01-01

Measures of quadrupolar interaction to nucleus level of the metal, in some hafnium complexes are presented, including the analysis by combustion, microanalysis, infrared spectroscopy and thermogravimetry. The hyperfine interaction parameters, the temperature effects and the thermal neutrons capture effects over the irradiated Hf Y (Y = EDTA) are also studied. (author)

On the interdiffusion in multilayered silicide coatings for the vanadium-based alloy V-4Cr-4Ti

Energy Technology Data Exchange (ETDEWEB)

Chaia, N., E-mail: nabil.chaia@usp.br [Escola de Engenharia de Lorena, Universidade de São Paulo, Pólo Urbo-Industrial Gleba AI-6, 12602-810 Lorena, SP (Brazil); Portebois, L., E-mail: leo.portebois@univ-lorraine.fr [Université de Lorraine, Institut Jean Lamour, UMR7198, Boulevard des Aiguillettes, BP70239, 54506 Vandoeuvre-lès-Nancy, Cedex (France); Mathieu, S., E-mail: stephane.mathieu@univ-lorraine.fr [Université de Lorraine, Institut Jean Lamour, UMR7198, Boulevard des Aiguillettes, BP70239, 54506 Vandoeuvre-lès-Nancy, Cedex (France); David, N., E-mail: nicolas.david@univ-lorraine.fr [Université de Lorraine, Institut Jean Lamour, UMR7198, Boulevard des Aiguillettes, BP70239, 54506 Vandoeuvre-lès-Nancy, Cedex (France); Vilasi, M., E-mail: michel.vilasi@univ-lorraine.fr [Université de Lorraine, Institut Jean Lamour, UMR7198, Boulevard des Aiguillettes, BP70239, 54506 Vandoeuvre-lès-Nancy, Cedex (France)

2017-02-15

To provide protection against corrosion at high temperatures, silicide diffusion coatings were developed for the V-4Cr-4Ti alloy, which can be used as the fuel cladding in next-generation sodium-cooled fast breeder reactors. The multilayered coatings were prepared by halide-activated pack cementation using MgF{sub 2} as the transport agent and pure silicon (high activity) as the master alloy. Coated pure vanadium and coated V-4Cr-4Ti alloy were studied and compared as substrates. In both cases, the growth of the silicide layers (V{sub 3}Si, V{sub 5}Si{sub 3}, V{sub 6}Si{sub 5} and VSi{sub 2}) was controlled exclusively by solid-state diffusion, and the growth kinetics followed a parabolic law. Wagner's analysis was adopted to calculate the integrated diffusion coefficients for all silicides. The estimated values of the integrated diffusion coefficients range from approximately 10{sup −9} to 10{sup −13} cm{sup 2} s{sup −1}. Then, a diffusion-based numerical approach was used to evaluate the growth and consumption of the layers when the coated substrates were exposed at critical temperatures. The estimated lifetimes of the upper VSi{sub 2} layer were 400 h and 280 h for pure vanadium and the V-4Cr-4Ti alloy, respectively. The result from the numeric simulation was in good agreement with the layer thicknesses measured after aging the coated samples at 1150 °C under vacuum. - Highlights: • The pack cementation technique is implemented to study interdiffusion in V/Si and V-4Cr-4Ti/Si couples. • Interdiffusion coefficients of vanadium silicides were experimentally determined within the range 1100–1250 °C. • For either V/Si or V-4Cr-4Ti/Si couples, the VSi{sub 2} layer has the highest growth rate. • The Cr and Ti alloying elements mainly modified the V{sub 5}Si{sub 3} and V{sub 6}Si{sub 5} growth rate. • Numerical simulation allows for a confident assessment of the VSi{sub 2} coating lifetime on V-4Cr-4Ti.

Rhodium and Hafnium Influence on the Microstructure, Phase Composition, and Oxidation Resistance of Aluminide Coatings

OpenAIRE

Maryana Zagula-Yavorska; Małgorzata Wierzbińska; Jan Sieniawski

2017-01-01

A 0.5 μm thick layer of rhodium was deposited on the CMSX 4 superalloy by the electroplating method. The rhodium-coated superalloy was hafnized and aluminized or only aluminized using the Chemical vapour deposition method. A comparison was made of the microstructure, phase composition, and oxidation resistance of three aluminide coatings: nonmodified (a), rhodium-modified (b), and rhodium- and hafnium-modified (c). All three coatings consisted of two layers: the additive layer and the interdi...

Study of bulk Hafnium oxide (HfO2) under compression

Science.gov (United States)

Pathak, Santanu; Mandal, Guruprasad; Das, Parnika

2018-04-01

Hafnium oxide (HfO2) is a technologically important material. This material has K-value of 25 and band gap 5.8 eV. A k value of 25-30 is preferred for a gate dielectric [1]. As it shows good insulating and capacitive properties, HfO2 is being considered as a replacement to SiO2 in microelectronic devices as gate dielectrics. On the other hand because of toughening mechanism due to phase transformation induced by stress field observed in these oxides, HFO2 has been a material of investigations in various configurations for a very long time. However the controversies about phase transition of HfO2 under pressure still exists. High quality synchrotron radiation has been used to study the structural phase transition of HfO2 under pressure.

Hafnium at subduction zones: isotopic budget of input and output fluxes; L'hafnium dans les zones de subduction: bilan isotopique des flux entrant et sortant

Energy Technology Data Exchange (ETDEWEB)

Marini, J.Ch

2004-05-15

Subduction zones are the primary regions of mass exchanges between continental crust and mantle of Earth through sediment subduction toward the earth's mantle and by supply of mantellic magmas to volcanic arcs. We analyze these mass exchanges using Hafnium and Neodymium isotopes. At the Izu-Mariana subduction zone, subducting sediments have Hf and Nd isotopes equivalent to Pacific seawater. Altered oceanic crust has Hf and Nd isotopic compositions equivalent to the isotopic budget of unaltered Pacific oceanic crust. At Luzon and Java subduction zones, arc lavas present Hf isotopic ratios highly radiogenic in comparison to their Nd isotopic ratios. Such compositions of the Luzon and Java arc lavas are controlled by a contamination of their sources by the subducted oceanic sediments. (author)

Microstructure of the irradiated U 3Si 2/Al silicide dispersion fuel

Science.gov (United States)

Gan, J.; Keiser, D. D.; Miller, B. D.; Jue, J.-F.; Robinson, A. B.; Madden, J. W.; Medvedev, P. G.; Wachs, D. M.

2011-12-01

The silicide dispersion fuel of U 3Si 2/Al is recognized as the best performance fuel for many nuclear research and test reactors with up to 4.8 gU/cm 3 fuel loading. An irradiated U 3Si 2/Al dispersion fuel ( 235U ˜ 75%) from the high-flux side of a fuel plate (U0R040) from the Reduced Enrichment for Research and Test Reactors (RERTR)-8 test was characterized using transmission electron microscopy (TEM). The fuel was irradiated in the Advanced Test Reactor (ATR) for 105 days. The average irradiation temperature and fission density of the U 3Si 2 fuel particles for the TEM sample are estimated to be approximately 110 °C and 5.4 × 10 27 f/m 3. The characterization was performed using a 200-kV TEM. The U/Si ratio for the fuel particle and (Si + Al)/U for the fuel-matrix-interaction layer are approximately 1.1 and 4-10, respectively. The estimated average diameter, number density and volume fraction for small bubbles (<1 μm) in the fuel particle are ˜94 nm, 1.05 × 10 20 m -3 and ˜11%, respectively. The results and their implication on the performance of the U 3Si 2/Al silicide dispersion fuel are discussed.

Steady-state thermal hydraulic analysis and flow channel blockage accident analysis of JRR-3 silicide core

International Nuclear Information System (INIS)

Kaminaga, Masanori

1997-03-01

JRR-3 is a light water moderated and cooled, beryllium and heavy water reflected pool type research reactor using low enriched uranium (LEU) plate-type fuels. Its thermal power is 20 MW. The core conversion program from uranium-aluminum (UAl x -Al) dispersion type fuel (aluminide fuel) to uranium-silicon-aluminum (U 3 Si 2 -Al) dispersion type fuel (silicide fuel) is currently conducted at the JRR-3. This report describes about the steady-state thermal hydraulic analysis results and the flow channel blockage accident analysis result. In JRR-3, there are two operation mode. One is high power operation mode up to 20 MW, under forced convection cooling using the primary and the secondary cooling systems. The other is low power operation mode up to 200 kW, under natural circulation cooling between the reactor core and the reactor pool without the primary and the secondary cooling systems. For the analysis of the flow channel blockage accident, COOLOD code was used. On the other hand, steady-state thermal hydraulic analysis for both of the high power operation mode under forced convection cooling and low power operation under natural convection cooling, COOLOD-N2 code was used. From steady-state thermal hydraulic analysis results of both forced and natural convection cooling, fuel temperature, minimum DNBR etc. meet the design criteria and JRR-3 LEU silicide core has enough safety margin under normal operation conditions. Furthermore, flow channel blockage accident analysis results show that one channel flow blockage accident meet the safety criteria for accident conditions which have been established for JRR-3 LEU silicide core. (author)

Impact of Nickel silicide Rear Metallization on Series Resistance of Crystalline Silicon Solar Cells

KAUST Repository

Bahabry, Rabab R

2018-01-11

The Silicon-based solar cell is one of the most important enablers toward high efficiency and low-cost clean energy resource. Metallization of silicon-based solar cells typically utilizes screen printed silver-Aluminium (Ag-Al) which affects the optimal electrical performance. To date, metal silicide-based ohmic contacts are occasionally used as an alternative candidate only to the front contact grid lines in crystalline silicon (c-Si) based solar cells. In this paper, we investigate the electrical characteristics of nickel mono-silicide (NiSi)/Cu-Al ohmic contact on the rear side of c-Si solar cells. We observe a significant enhancement in the fill factor of around 6.5% for NiSi/Cu-Al rear contacts leading to increasing the efficiency by 1.2% compared to Ag-Al. This is attributed to the improvement of the parasitic resistance in which the series resistance decreased by 0.737 Ω.cm². Further, we complement experimental observation with a simulation of different contact resistance values, which manifests NiSi/Cu-Al rear contact as a promising low-cost metallization for c-Si solar cells with enhanced efficiency.

High-Temperature Compatible Nickel Silicide Thermometer And Heater For Catalytic Chemical Microreactors

DEFF Research Database (Denmark)

Jensen, Søren; Quaade, U.J.; Hansen, Ole

2005-01-01

Integration of heaters and thermometers is important for agile and accurate control and measurement of the thermal reaction conditions in microfabricated chemical reactors (microreactors). This paper describes development and operation of nickel silicide heaters and temperature sensors...... for temperatures exceeding 700 °C. The heaters and thermometers are integrated with chemical microreactors for heterogeneous catalytic conversion of gasses, and thermally activated catalytic conversion of CO to CO2 in the reactors is demonstrated. The heaters and thermometers are shown to be compatible...

Pilot plant production at Riso of LEU silicide fuel for the Danish reactor DR3

International Nuclear Information System (INIS)

Toft, P.; Borring, J.; Adolph, E.

1988-01-01

A pilot plant for fabricating LEU silicide fuel elements has been established at Riso National Laboratory. Three test elements for the Danish reactor DR3 have been fabricated, based on 19.88% enriched U 3 Si 2 powder that has been purchased elsewhere. The pilot plant has been set up and 3 test elements fabricated without any major difficulties

Morphological and electrical properties of self-assembled iron silicide nanoparticles on Si(0 0 1) and Si(1 1 1) substrates

International Nuclear Information System (INIS)

Molnár, G.; Dózsa, L.; Erdélyi, R.; Vértesy, Z.; Osváth, Z.

2015-01-01

Highlights: • Epitaxial iron silicide nanostructures were grown on Si(1 1 1) and Si(0 0 1) substrates. • The size and shape of the particles are the function of the thickness and annealing. • The local current–voltage characteristics were measured by conductive AFM. • The different size and shape nanoparticles show similar I–V characteristics. • The tip current is dominated in few nm size sites, visible in the AFM phase image. - Abstract: Epitaxial iron silicide nanostructures are grown by solid phase epitaxy on Si(0 0 1) and Si(1 1 1), and by reactive deposition epitaxy on Si(0 0 1) substrates. The formation process is monitored by reflection high-energy electron diffraction. The morphology, size, and electrical properties of the nanoparticles are investigated by scanning electron microscopy, by electrically active scanning probe microscopy, and by confocal Raman spectroscopy. The results show that the shape, size, orientation, and density of the nanoobjects can be tuned by self-assembly, controlled by the lattice misfit between the substrates and iron silicides. The size distribution and shape of the grown nanoparticles depend on the substrate orientation, on the initial thickness of the evaporated iron, on the temperature and time of the annealing, and on the preparation method. The so-called Ostwald ripening phenomena, which state that the bigger objects develop at the expense of smaller ones, controls the density of the nanoparticles. Raman spectra show the bigger objects do not contain β-FeSi 2 phase. The different shape nanoparticles exhibit small, about 100 mV barrier compared to the surrounding silicon. The local leakage current of the samples measured by conductive AFM using a Pt coated Si tip is localized in a few nanometers size sites, and the sites which we assume are very small silicide nanoparticles or point defects.

Hafnium at subduction zones: isotopic budget of input and output fluxes

International Nuclear Information System (INIS)

Marini, J.Ch.

2004-05-01

Subduction zones are the primary regions of mass exchanges between continental crust and mantle of Earth through sediment subduction toward the earth's mantle and by supply of mantellic magmas to volcanic arcs. We analyze these mass exchanges using Hafnium and Neodymium isotopes. At the Izu-Mariana subduction zone, subducting sediments have Hf and Nd isotopes equivalent to Pacific seawater. Altered oceanic crust has Hf and Nd isotopic compositions equivalent to the isotopic budget of unaltered Pacific oceanic crust. At Luzon and Java subduction zones, arc lavas present Hf isotopic ratios highly radiogenic in comparison to their Nd isotopic ratios. Such compositions of the Luzon and Java arc lavas are controlled by a contamination of their sources by the subducted oceanic sediments. (author)

Process Parameters Optimization of 14nm MOSFET Using 2-D Analytical Modelling

Directory of Open Access Journals (Sweden)

Noor Faizah Z.A.

2016-01-01

Full Text Available This paper presents the modeling and optimization of 14nm gate length CMOS transistor which is down-scaled from previous 32nm gate length. High-k metal gate material was used in this research utilizing Hafnium Dioxide (HfO2 as dielectric and Tungsten Silicide (WSi2 and Titanium Silicide (TiSi2 as a metal gate for NMOS and PMOS respectively. The devices are fabricated virtually using ATHENA module and characterized its performance evaluation via ATLAS module; both in Virtual Wafer Fabrication (VWF of Silvaco TCAD Tools. The devices were then optimized through a process parameters variability using L9 Taguchi Method. There were four process parameter with two noise factor of different values were used to analyze the factor effect. The results show that the optimal value for both transistors are well within ITRS 2013 prediction where VTH and IOFF are 0.236737V and 6.995705nA/um for NMOS device and 0.248635 V and 5.26nA/um for PMOS device respectively.

Influence of layout parameters on snapback characteristic for a gate-grounded NMOS device in 0.13-μm silicide CMOS technology

International Nuclear Information System (INIS)

Jiang Yuxi; Li Jiao; Ran Feng; Cao Jialin; Yang Dianxiong

2009-01-01

Gate-grounded NMOS (GGNMOS) devices with different device dimensions and layout floorplans have been designed and fabricated in 0.13-μm silicide CMOS technology. The snapback characteristics of these GGNMOS devices are measured using the transmission line pulsing (TLP) measurement technique. The relationships between snapback parameters and layout parameters are shown and analyzed. A TCAD device simulator is used to explain these relationships. From these results, the circuit designer can predict the behavior of the GGNMOS devices under high ESD current stress, and design area-efficient ESD protection circuits to sustain the required ESD level. Optimized layout rules for ESD protection in 0.13-μm silicide CMOS technology are also presented. (semiconductor devices)

Thermal expansion studies on Hafnium titanate (HfTiO4)

International Nuclear Information System (INIS)

Panneerselvam, G.; Subramanian, G.G.S.; Antony, M.P.

2006-01-01

The lattice thermal expansion characteristics of hafnium titanate (HfTiO 4 ) have been studied by measuring the lattice parameter as a function of temperature by high temperature X-ray diffraction technique (HT-XRD) in the temperature range 298-1973K. Percentage linear thermal expansion and mean linear thermal expansion coefficients were computed from the lattice parameter data. The thermal expansion of HfTiO 4 is highly anisotropic. The expansivity along 'a' axis is large; as compared to the expansivity along 'b' axis which is negative below 1073 K. The percentage linear thermal expansion in the temperature range 298-1973 K along a, b and c axis are 2.74, 0.901 and 1.49 respectively. Thermal expansion values obtained in the present study are in reasonable agreement with the existing thermal expansion data. (author)

Characterization of tungsten silicides formed by rapid thermal annealing

International Nuclear Information System (INIS)

Siegal, M.; Santiago, J.J.; VanDerSpiegel, J.

1986-01-01

Tungsten silicide samples were formed by sputter depositing 80 nm W metal onto (100) oriented, 5 ohm-cm Si wafers. After deposition, the samples were fast radiatively processed in an RTA system using quartz-halogen tungsten lamps as radiation sources for time intervals ranging from 20 to 60s under high vacuum. Films processed at 22-25 W/cm 2 radiation with the film side of the samples oriented away from the lamps result in films which are metallic or cloudy in color, and have mixed composition as evidenced by x-ray diffraction (W, W 5 Si 3 and WSi 2 ). Films processed with the film side oriented toward the lamps show the occurrence of a phase transformation clearly nucleated at the film edge

In-pile test results of U-silicide or U-nitride coated U-7Mo particle dispersion fuel in Al

Science.gov (United States)

Kim, Yeon Soo; Park, J. M.; Lee, K. H.; Yoo, B. O.; Ryu, H. J.; Ye, B.

2014-11-01

U-silicide or U-nitride coated U-Mo particle dispersion fuel in Al (U-Mo/Al) was in-pile tested to examine the effectiveness of the coating as a diffusion barrier between the U-7Mo fuel kernels and Al matrix. This paper reports the PIE data and analyses focusing on the effectiveness of the coating in terms of interaction layer (IL) growth and general fuel performance. The U-silicide coating showed considerable success, but it also provided evidence for additional improvement for coating process. The U-nitride coated specimen showed largely inefficient results in reducing IL growth. From the test, important observations were also made that can be utilized to improve U-Mo/Al fuel performance. The heating process for coating turned out to be beneficial to suppress fuel swelling. The use of larger fuel particles confirmed favorable effects on fuel performance.

In-pile test results of U-silicide or U-nitride coated U-7Mo particle dispersion fuel in Al

Energy Technology Data Exchange (ETDEWEB)

Kim, Yeon Soo, E-mail: yskim@anl.gov [Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439 (United States); Park, J.M.; Lee, K.H.; Yoo, B.O. [Korea Atomic Energy Research Institute, 989-111 Daedeokdaero, Yuseong-gu, Daejeon 305-353 (Korea, Republic of); Ryu, H.J. [Dept. of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Ye, B. [Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439 (United States)

2014-11-15

U-silicide or U-nitride coated U-Mo particle dispersion fuel in Al (U-Mo/Al) was in-pile tested to examine the effectiveness of the coating as a diffusion barrier between the U-7Mo fuel kernels and Al matrix. This paper reports the PIE data and analyses focusing on the effectiveness of the coating in terms of interaction layer (IL) growth and general fuel performance. The U-silicide coating showed considerable success, but it also provided evidence for additional improvement for coating process. The U-nitride coated specimen showed largely inefficient results in reducing IL growth. From the test, important observations were also made that can be utilized to improve U-Mo/Al fuel performance. The heating process for coating turned out to be beneficial to suppress fuel swelling. The use of larger fuel particles confirmed favorable effects on fuel performance.

Silicide induced surface defects in FePt nanoparticle fcc-to-fct thermally activated phase transition

International Nuclear Information System (INIS)

Chen, Shu; Lee, Stephen L.; André, Pascal

2016-01-01

Magnetic nanoparticles (MnPs) are relevant to a wide range of applications including high density information storage and magnetic resonance imaging to name but a few. Among the materials available to prepare MnPs, FePt is attracting growing attention. However, to harvest the strongest magnetic properties of FePt MnPs, a thermal annealing is often required to convert face-centered cubic as synthesized nPs into its tetragonal phase. Rarely addressed are the potential side effects of such treatments on the magnetic properties. In this study, we focus on the impact of silica shells often used in strategies aiming at overcoming MnP coalescence during the thermal annealing. While we show that this shell does prevent sintering, and that fcc-to-fct conversion does occur, we also reveal the formation of silicide, which can prevent the stronger magnetic properties of fct-FePt MnPs from being fully realised. This report therefore sheds lights on poorly investigated and understood interfacial phenomena occurring during the thermal annealing of MnPs and, by doing so, also highlights the benefits of developing new strategies to avoid silicide formation.

Mössbauer spectroscopy study of surfactant sputtering induced Fe silicide formation on a Si surface

Energy Technology Data Exchange (ETDEWEB)

Beckmann, C.; Zhang, K. [2nd Institute of Physics, University of Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany); Hofsäss, H., E-mail: hans.hofsaess@phys.uni-goettingen.de [2nd Institute of Physics, University of Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany); Brüsewitz, C.; Vetter, U. [2nd Institute of Physics, University of Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany); Bharuth-Ram, K. [Physics Department, Durban University of Technology, Durban 4001 (South Africa)

2015-12-01

Highlights: • We study the formation of self-organized nanoscale dot and ripple patterns on Si. • Patterns are created by keV noble gas ion irradiation and simultaneous {sup 57}Fe co-deposition. • Ion-induced phase separation and the formation of a-FeSi{sub 2} is identified as relevant process. - Abstract: The formation of Fe silicides in surface ripple patterns, generated by erosion of a Si surface with keV Ar and Xe ions and simultaneous co-deposition of Fe, was investigated with conversion electron Mössbauer spectroscopy, atomic force microscopy and Rutherford backscattering spectrometry. For the dot and ripple patterns studied, we find an average Fe concentration in the irradiated layer between 6 and 25 at.%. The Mössbauer spectra clearly show evidence of the formation of Fe disilicides with Fe content close to 33 at.%, but very little evidence of the formation of metallic Fe particles. The results support the process of ion-induced phase separation toward an amorphous Fe disilicide phase as pattern generation mechanism. The observed amorphous phase is in agreement with thermodynamic calculations of amorphous Fe silicides.

Silicide induced surface defects in FePt nanoparticle fcc-to-fct thermally activated phase transition

Energy Technology Data Exchange (ETDEWEB)

Chen, Shu; Lee, Stephen L. [School of Physics and Astronomy, SUPA, University of St Andrews, St Andrews KY16 9SS (United Kingdom); André, Pascal, E-mail: pjpandre@riken.jp [School of Physics and Astronomy, SUPA, University of St Andrews, St Andrews KY16 9SS (United Kingdom); RIKEN, Wako 351-0198 (Japan); Department of Physics, CNRS-Ewha International Research Center (CERC), Ewha W. University, Seoul 120-750 (Korea, Republic of)

2016-11-01

Magnetic nanoparticles (MnPs) are relevant to a wide range of applications including high density information storage and magnetic resonance imaging to name but a few. Among the materials available to prepare MnPs, FePt is attracting growing attention. However, to harvest the strongest magnetic properties of FePt MnPs, a thermal annealing is often required to convert face-centered cubic as synthesized nPs into its tetragonal phase. Rarely addressed are the potential side effects of such treatments on the magnetic properties. In this study, we focus on the impact of silica shells often used in strategies aiming at overcoming MnP coalescence during the thermal annealing. While we show that this shell does prevent sintering, and that fcc-to-fct conversion does occur, we also reveal the formation of silicide, which can prevent the stronger magnetic properties of fct-FePt MnPs from being fully realised. This report therefore sheds lights on poorly investigated and understood interfacial phenomena occurring during the thermal annealing of MnPs and, by doing so, also highlights the benefits of developing new strategies to avoid silicide formation.

Magnesium and Manganese Silicides For Efficient And Low Cost Thermo-Electric Power Generation

Energy Technology Data Exchange (ETDEWEB)

Trivedi, Sudhir B. [Brimrose Technology Corporation; Kutcher, Susan W. [Brimrose Technology Corporation; Rosemeier, Cory A. [Brimrose Technology Corporation; Mayers, David [Brimrose Technology Corporation; Singh, Jogender [Pennsylvania State University

2013-12-02

Thermoelectric Power Generation (TEPG) is the most efficient and commercially deployable power generation technology for harvesting wasted heat from such things as automobile exhausts, industrial furnaces, and incinerators, and converting it into usable electrical power. We investigated the materials magnesium silicide (Mg2Si) and manganese silicide (MnSi) for TEG. MgSi2 and MnSi are environmentally friendly, have constituent elements that are abundant in the earth's crust, non-toxic, lighter and cheaper. In Phase I, we successfully produced Mg2Si and MnSi material with good TE properties. We developed a novel technique to synthesize Mg2Si with good crystalline quality, which is normally very difficult due to high Mg vapor pressure and its corrosive nature. We produced n-type Mg2Si and p-type MnSi nanocomposite pellets using FAST. Measurements of resistivity and voltage under a temperature gradient indicated a Seebeck coefficient of roughly 120 V/K on average per leg, which is quite respectable. Results indicated however, that issues related to bonding resulted in high resistivity contacts. Determining a bonding process and bonding material that can provide ohmic contact from room temperature to the operating temperature is an essential part of successful device fabrication. Work continues in the development of a process for reproducibly obtaining low resistance electrical contacts.

Electron spectroscopy in the X-ray range for occupied and free levels and the application to transition metal silicides

International Nuclear Information System (INIS)

Speier, W.

1988-03-01

Intermetallic compounds of transition metals are investigated by means of XPS, Bremsstrahlung Isochromate Spectroscopy and XAS. Occupied and free levels are characterized and moreover a systematic overview over the electronic structure of the transition element silicides is given. (BHO)

Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide

Directory of Open Access Journals (Sweden)

Fu-Chien Chiu

2013-01-01

Full Text Available The interfacial properties between silicon and hafnium oxide (HfO2 are explored by the gated-diode method and the subthreshold measurement. The density of interface-trapped charges, the current induced by surface defect centers, the surface recombination velocity, and the surface state capture cross-section are obtained in this work. Among the interfacial properties, the surface state capture cross-section is approximately constant even if the postdeposition annealing condition is changed. This effective capture cross-section of surface states is about 2.4 × 10−15 cm2, which may be an inherent nature in the HfO2/Si interface.

A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide

Directory of Open Access Journals (Sweden)

S. Riedel

2016-09-01

Full Text Available Ferroelectric properties in hafnium oxide based thin films have recovered the scaling potential for ferroelectric memories due to their ultra-thin-film- and CMOS-compatibility. However, the variety of physical phenomena connected to ferroelectricity allows a wider range of applications for these materials than ferroelectric memory. Especially mixed HfxZr1-xO2 thin films exhibit a broad compositional range of ferroelectric phase stability and provide the possibility to tailor material properties for multiple applications. Here it is shown that the limited thermal stability and thick-film capability of HfxZr1-xO2 can be overcome by a laminated approach using alumina interlayers.

Influence of plastic deformation on nitriding of a molybdenum-hafnium alloy

International Nuclear Information System (INIS)

Lakhtin, Yu.M.; Kogan, Ya.D.; Shashkov, D.P.; Likhacheva, T.E.

1982-01-01

The influence of a preliminary plastic strain on the structure and properties of molybdenum alloy with 0.2 wt.% Hf upon nitriding in the ammonia medium at 900-1200 deg C during 1-6 h is investigated. The study of microhardness distribution across the nitrided layer thickness has shown that with increase of the degree of preliminary plastic strain up to 50 % the nitrided layer hardness decreases and with further reduction growth up to 90 % - increases. Nitriding sharply (hundred times) increases wear resistance of molybdenum alloy with hafnium addition. At the reduction degree 25 % the wear resistance is less than at other values of percentage reduction in area owing to the minimum thickness of the nitride zone. The alloy strained before nitriding by 25 % has shown the best results during heat resistance testing

Microstructure and mechanical properties of molybdenum silicides with Al additions

International Nuclear Information System (INIS)

Rosales, I.; Bahena, D.; Colin, J.

2007-01-01

Several molybdenum silicides alloys with different aluminum additions were produced by the arc-cast method. Microstructure observed in the alloys presented a variation of the precipitated second phase respect to the aluminum content. Evaluation of the compressive behavior at high temperature of the alloys shows an important improvement in its ductility, approximately of 20%. Fracture toughness was increased proportionally with Al content. In addition at room temperature the alloys show a better mechanical behavior in comparison with the sample unalloyed. In general, Al additions result to be a good alternative to improve the resistance of these intermetallic alloys. The results are interpreted on the base of the analysis of second phase strengthening

Evaluation of powder metallurgical processing routes for multi-component niobium silicide-based high-temperature alloys

Energy Technology Data Exchange (ETDEWEB)

Seemueller, Hans Christoph Maximilian

2016-03-22

Niobium silicide-based composites are potential candidates to replace nickel-base superalloys for turbine applications. The goal of this work was to evaluate the feasibility and differences in ensuing properties of various powder metallurgical processing techniques that are capable of manufacturing net-shape turbine components. Two routes for powder production, mechanical alloying and gas atomization were combined with compaction via hot isostatic pressing and powder injection molding.

Capacitance-voltage characterization of fully silicided gated MOS capacitor

International Nuclear Information System (INIS)

Wang Baomin; Ru Guoping; Jiang Yulong; Qu Xinping; Li Bingzong; Liu Ran

2009-01-01

This paper investigates the capacitance-voltage (C-V) measurement on fully silicided (FUSI) gated metal-oxide-semiconductor (MOS) capacitors and the applicability of MOS capacitor models. When the oxide leakage current of an MOS capacitor is large, two-element parallel or series model cannot be used to obtain its real C-V characteristic. A three-element model simultaneously consisting of parallel conductance and series resistance or a four-element model with further consideration of a series inductance should be used. We employed the three-element and the four-element models with the help of two-frequency technique to measure the Ni FUSI gated MOS capacitors. The results indicate that the capacitance of the MOS capacitors extracted by the three-element model still shows some frequency dispersion, while that extracted by the four-element model is close to the real capacitance, showing little frequency dispersion. The obtained capacitance can be used to calculate the dielectric thickness with quantum effect correction by NCSU C-V program. We also investigated the influence of MOS capacitor's area on the measurement accuracy. The results indicate that the decrease of capacitor area can reduce the dissipation factor and improve the measurement accuracy. As a result, the frequency dispersion of the measured capacitance is significantly reduced, and real C-V characteristic can be obtained directly by the series model. In addition, this paper investigates the quasi-static C-V measurement and the photonic high-frequency C-V measurement on Ni FUSI metal gated MOS capacitor with a thin leaky oxide. The results indicate that the large tunneling current through the gate oxide significantly perturbs the accurate measurement of the displacement current, which is essential for the quasi-static C-V measurement. On the other hand, the photonic high-frequency C-V measurement can bypass the leakage problem, and get reliable low-frequency C-V characteristic, which can be used to

Dielectric response and ac conductivity analysis of hafnium oxide nanopowder

International Nuclear Information System (INIS)

Karahaliou, P K; Xanthopoulos, N; Krontiras, C A; Georga, S N

2012-01-01

The dielectric response of hafnium oxide nanopowder was studied in the frequency range of 10 -2 -10 6 MHz and in the temperature range of 20-180 °C. Broadband dielectric spectroscopy was applied and the experimental results were analyzed and discussed using the electric modulus (M*) and alternating current (ac) conductivity formalisms. The analyses of the dc conductivity and electric modulus data revealed the presence of mechanisms which are thermally activated, both with almost the same activation energy of 1.01 eV. A fitting procedure involving the superposition of the thermally activated dc conductivity, the universal dielectric responce and the near constant loss terms has been used to describe the frequency evolution of the real part of the specific electrical conductivity. The conductivity master curve was obtained, suggesting that the time-temperature superposition principle applies for the studied system, thus implying that the conductivity mechanisms are temperature independent.

Interface and oxide traps in high-κ hafnium oxide films

International Nuclear Information System (INIS)

Wong, H.; Zhan, N.; Ng, K.L.; Poon, M.C.; Kok, C.W.

2004-01-01

The origins of the interface trap generation and the effects of thermal annealing on the interface and bulk trap distributions are studied in detail. We found that oxidation of the HfO 2 /Si interface, removal of deep trap centers, and crystallization of the as-deposited film will take place during the post-deposition annealing (PDA). These processes will result in the removal of interface traps and deep oxide traps and introduce a large amount of shallow oxide traps at the grain boundaries of the polycrystalline film. Thus, trade-off has to be made in considering the interface trap density and oxide trap density when conducting PDA. In addition, the high interface trap and oxide trap densities of the HfO 2 films suggest that we may have to use the SiO 2 /HfO 2 stack or hafnium silicate structure for better device performance

Effects of oxygen partial pressure and annealing temperature on the residual stress of hafnium oxide thin-films on silicon using synchrotron-based grazing incidence X-ray diffraction

Energy Technology Data Exchange (ETDEWEB)

Biswas, Debaleen [Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India); Sinha, Anil Kumar [ISU, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India); Homi Bhabha National Institute, BARC, Mumbai 400 094 (India); Chakraborty, Supratic, E-mail: supratic.chakraborty@saha.ac.in [Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India)

2016-10-30

Highlights: • Residual stress estimation thin hafnium oxide film with thickness of <10 nm. • A mathematical expression is proposed for stress estimation of thin-film using GIXRD. • Residual stress varies with argon content in Ar/O{sub 2} plasma and annealing temperature. • Variation of stress is explained by IL swelling and enhanced structural relaxation. - Abstract: Synchrotron radiation-based grazing incidence X-ray diffraction (GI-XRD) technique is employed here to estimate the residual stress of < 10 nm thin hafnium oxide film deposited on Si (100) substrate at different argon/oxygen ratios using reactive rf sputtering. A decrease in residual stress, tensile in nature, is observed at higher annealing temperature for the samples deposited with increasing argon ratio in the Ar/O{sub 2} plasma. The residual stress of the films deposited at higher p{sub Ar} (Ar:O{sub 2} = 4:1) is also found to be decreased with increasing annealing temperature. But the stress is more or less constant with annealing temperature for the films deposited at lower Ar/O{sub 2} (1:4) ratio. All the above phenomena can be explained on the basis of swelling of the interfacial layer and enhanced structural relaxation in the presence of excess Hf in hafnium oxide film during deposition.

Hot wire chemical vapor deposition: limits and opportunities of protecting the tungsten catalyzer from silicide with a cavity

International Nuclear Information System (INIS)

Frigeri, P.A.; Nos, O.; Bengoechea, S.; Frevert, C.; Asensi, J.M.; Bertomeu, J.

2009-01-01

Hot Wire Chemical Vapor Deposition (HW-CVD) is one of the most promising techniques for depositing the intrinsic microcrystalline silicon layer for the production of micro-morph solar cells. However, the silicide formation at the colder ends of the tungsten wire drastically reduces the lifetime of the catalyzer, thus limiting its industrial exploitation. A simple but interesting strategy to decrease the silicide formation is to hide the electrical contacts of the catalyzer in a long narrow cavity which reduces the probability of the silane molecules to reach the colder ends of the wire. In this paper, the working mechanism of the cavity is elucidated. Measurements of the thickness profile of the silicon deposited in the internal walls of the cavity have been compared with those predicted using a simple diffusion model based on the assumption of Knudsen flow. A lifetime study of the protected and unprotected wires has been carried out. The different mechanisms which determine the deterioration of the catalyzer have been identified and discussed.

The heat capacity and entropy of the lithium silicides Li17Si4 and Li16.42Si4 in the temperature range from (2 to 873) K

International Nuclear Information System (INIS)

Thomas, Daniel; Zeilinger, Michael; Gruner, Daniel; Hüttl, Regina; Seidel, Jürgen; Wolter, Anja U.B.; Fässler, Thomas F.; Mertens, Florian

2015-01-01

Highlights: • High quality experimental heat capacities of the new lithium rich silicides Li 17 Si 4 and Li 16.42 Si 4 are reported. • Two different calorimeters have been used to cover the broad temperature range from (2 to 873) K. • Samples were prepared and characterized (XRD) by the original authors who firstly described these new silicide phases in 2013. • Supply of polynomial heat capacity functions for four temperature intervals. • Calculation of standard entropies and entropies of formation of the lithium silicides. - Abstract: This work presents the heat capacities and standard entropies of the recently described lithium rich silicide phases Li 17 Si 4 and Li 16.42 Si 4 as a function of temperature in the range from (2 to 873) K. The measurements were carried out using two different calorimeters. The heat capacities were determined in the range from T = (2 to 300) K by a relaxation technique using a Physical Properties Measurement System (PPMS) from Quantum Design, and in the range from T = (283 to 873) K by means of a Sensys DSC from Setaram applying the C p -by-step method. The experimental data are given with an accuracy of (1 to 2)% above T = 20 K and the error increases up to 7% below T = 20 K. The results of the measurements at low temperatures permit the calculation of additional thermodynamic parameters such as the standard entropy as well as the temperature coefficients of electronic and lattice contributions to the heat capacity. Additionally, differential scanning calorimetric (DSC) measurements were carried out to verify the phase transition temperatures of the studied lithium silicide phases. The results represent a significant contribution to the data basis for thermodynamic calculations (e.g. CALPHAD) and to the understanding of the phase equilibria in the (Li + Si) system, especially in the lithium rich region

Analysis Influence of Mixing Gd2O3 in the Silicide Fuel Element to Core Excess Reactivity of RSG-GAS

International Nuclear Information System (INIS)

Susilo, Jati

2004-01-01

Gadolinium (Gd 2 O 3 ) is a burnable poison material mixed in the pin fuel element of the LWR core used to decrease core excess reactivity. In this research, analysis influence of mixing Gd 2 O 3 in the silicide fuel element to excess reactivity of the RSG-GAS core had been done. Equivalent cell of the equilibrium core developed by L.E.Strawbridge from Westing House Co. burn-up calculation has been done using SRAC-PIJ computer code achieve infinite multiplication factor (k x ). Value of Gd 2 O 3 concentration in the fuel element (pcm) showed by mass ratio of Gd 2 O 3 (gram) to that U 3 Si 2 (gram) times 10 5 , that is 0 pcm ∼ 100 pcm. From the calculation results analysis showed that Gd 2 O 3 concentration added should be considered. because a large number of Gd 2 O 3 will result in not achieving criticality at the Beginning Of Cycle. The maximum concentration of Gd 2 O 3 for RSG-GAS equilibrium fueled silicide 2.96 grU/cc is 80 pcm or 52.02 mgram/fuel plate. Maximum reduction of core excess reactivity due to mixing of Gd 2 O 3 in the RSG-GAS silicide fuels was around 1.502 %Δk/k, and hence not achieving the standard nominal excess reactivity for RSG-GAS core using high density of U 3 Si 2 -Al fuel. (author)

Estimations on uranium silicide fuel prototypes for their irradiation and postirradiation

International Nuclear Information System (INIS)

Sbaffoni, Maria M.

2000-01-01

The 'Silicide' project includes the qualification of this type of research reactor fuel to be used i.e. in the Argentine RA-3 and to confirm CNEA's role as an international supplier. The present paper shows complementary basic information for P-04 prototype post-irradiation, which is already under way, and some parameter values related to the new P-06 prototype to be taken into account for planning its irradiation and post-irradiation. The reliability of these values has been evaluated through comparison with experimental results. The reported results contribute, also, to a parallel study on the nuclear data libraries used in calculations for this type of reactor. (author)

Pyroelectricity of silicon-doped hafnium oxide thin films

Science.gov (United States)

Jachalke, Sven; Schenk, Tony; Park, Min Hyuk; Schroeder, Uwe; Mikolajick, Thomas; Stöcker, Hartmut; Mehner, Erik; Meyer, Dirk C.

2018-04-01

Ferroelectricity in hafnium oxide thin films is known to be induced by various doping elements and in solid-solution with zirconia. While a wealth of studies is focused on their basic ferroelectric properties and memory applications, thorough studies of the related pyroelectric properties and their application potential are only rarely found. This work investigates the impact of Si doping on the phase composition and ferro- as well as pyroelectric properties of thin film capacitors. Dynamic hysteresis measurements and the field-free Sharp-Garn method were used to correlate the reported orthorhombic phase fractions with the remanent polarization and pyroelectric coefficient. Maximum values of 8.21 µC cm-2 and -46.2 µC K-1 m-2 for remanent polarization and pyroelectric coefficient were found for a Si content of 2.0 at%, respectively. Moreover, temperature-dependent measurements reveal nearly constant values for the pyroelectric coefficient and remanent polarization over the temperature range of 0 ° C to 170 ° C , which make the material a promising candidate for IR sensor and energy conversion applications beyond the commonly discussed use in memory applications.

Implantation of titanium, chromium, yttrium, molybdenum, silver, hafnium, tantalum, tungsten and platinum ions generated by a metal vapor vacuum ion source into 440C stainless steel

International Nuclear Information System (INIS)

Sasaki, Jun; Hayashi, Kazunori; Sugiyama, Kenji; Ichiko, Osami; Hashiguchi, Yoshihiro

1992-01-01

Titanium, yttrium, molybdenum, silver, chromium, hafnium, tantalum, tungsten and platinum ions generated by a metal vapor vacuum arc (MEVVA) ion source were implanted into 440C stainless steel in the dose region 10 17 ions cm -2 with extraction voltages of up to 70 kV. Glow discharge spectroscopy (GDS), friction coefficient, and Vickers microhardness of the specimens were studied. Grooves made by friction tests were investigated by electron probe microanalysis (EPMA). GDS showed incorporation of carbon in the yttrium, hafnium, tantalum, tungsten and platinum implanted specimens, as well as titanium implanted samples. A large amount of oxygen was observed in the yttrium implanted specimen. The friction coefficient was measured by reciprocating sliding of an unimplanted 440C ball without lubricant at a load of 0.245 N. The friction decreased and achieved a stable state after implantation of titanium, hafnium and tantalum. The friction coefficient of the platinum implanted specimen showed a gradual decrease after several cycles of sliding at high friction coefficient. The yttrium implanted sample exhibited a decreased but slightly unstable friction coefficient. Results from EPMA showed that the implanted elements, which gave decreased friction, remained even after sliding of 200 cycles. Implantation of chromium, molybdenum, silver and tungsten did not provide a decrease in friction and the implants were gone from the wear grooves after the sliding tests. (orig.)

Intermetallic nickel silicide nanocatalyst-A non-noble metal-based general hydrogenation catalyst.

Science.gov (United States)

Ryabchuk, Pavel; Agostini, Giovanni; Pohl, Marga-Martina; Lund, Henrik; Agapova, Anastasiya; Junge, Henrik; Junge, Kathrin; Beller, Matthias

2018-06-01

Hydrogenation reactions are essential processes in the chemical industry, giving access to a variety of valuable compounds including fine chemicals, agrochemicals, and pharmachemicals. On an industrial scale, hydrogenations are typically performed with precious metal catalysts or with base metal catalysts, such as Raney nickel, which requires special handling due to its pyrophoric nature. We report a stable and highly active intermetallic nickel silicide catalyst that can be used for hydrogenations of a wide range of unsaturated compounds. The catalyst is prepared via a straightforward procedure using SiO 2 as the silicon atom source. The process involves thermal reduction of Si-O bonds in the presence of Ni nanoparticles at temperatures below 1000°C. The presence of silicon as a secondary component in the nickel metal lattice plays the key role in its properties and is of crucial importance for improved catalytic activity. This novel catalyst allows for efficient reduction of nitroarenes, carbonyls, nitriles, N-containing heterocycles, and unsaturated carbon-carbon bonds. Moreover, the reported catalyst can be used for oxidation reactions in the presence of molecular oxygen and is capable of promoting acceptorless dehydrogenation of unsaturated N-containing heterocycles, opening avenues for H 2 storage in organic compounds. The generality of the nickel silicide catalyst is demonstrated in the hydrogenation of over a hundred of structurally diverse unsaturated compounds. The wide application scope and high catalytic activity of this novel catalyst make it a nice alternative to known general hydrogenation catalysts, such as Raney nickel and noble metal-based catalysts.

Critical evaluation of the determination of zirconium and hafnium by instrumental and radiochemical neutron activation analysis

International Nuclear Information System (INIS)

Burger, Mario; Kraehenbuehl, Urs

1991-01-01

Neutron activation analysis (instrument or radiochemical) is suitable for the determination of zirconium and hafnium in samples of geochemical origin only when sufficient attention is paid to inter-fering nuclides. The size of the necessary correction for INAA depends on the composition of the sample; this problem is discussed. The radio-chemical technique which is recommended involves separation of the samples, precipitations and anion-exchange separation. Results are given for various standard reference materials and for meteorites. (author). 12 refs.; 1 fig.; 9 tabs

Surface effect on the electronic and the magnetic properties of rock-salt alkaline-earth metal silicides

International Nuclear Information System (INIS)

Bialek, Beata; Lee, Jaeil

2011-01-01

An all electron ab-initio method was employed to study the electronic and the magnetic properties of the (001) surface of alkaline-earth metal silicides, CaSi, SrSi, and BaSi, in the rock-salt structure. The three compounds retain their ferromagnetic metallic properties at the surface. Due to the surface effects, the magnetism of the topmost layer is changed as compared with the bulk. This is a short-range effect. In CaSi, the magnetism of the surface layer is noticeably reduced, as compared with the bulk: magnetic moments (MMs) on both Ca and Si atoms are reduced. In SrSi (001), the polarization of electrons in the surface atoms is similar to that in the bulk atoms, and the values of MMs on the component atoms in the topmost layer do not change as much as in CaSi. In BaSi (001), the magnetic properties of Si surface atoms are enhanced slightly, and the magnetism of Ba atoms is not affected considerably by the surface effect. The calculated densities of states confirm the short-range effect of the surface on the electronic properties of the metal silicides.

A fast response hafnium selective polymeric membrane electrode based on N,N'-bis(α-methyl-salicylidene)-dipropylenetriamine as a neutral carrier

International Nuclear Information System (INIS)

Rezaei, B.; Meghdadi, S.; Zarandi, R. Fazel

2008-01-01

In this study a new hafnium selective sensor was fabricated from polyvinylchloride (PVC) matrix membrane containing neutral carrier N,N'-bis(α-methyl-salicylidene)-dipropylenetriamine (Mesaldpt) as a new ionophore, sodium tetraphenyl borate (NaTPB) as anionic discriminator and dioctyl phthalate (DOP) as plasticizing solvent mediator in tetrahydrofuran solvent. The electrode exhibits Nernstian response for Hf 4+ (Hafnium(IV)) over a wide concentration range (2.0 x 10 -7 to 1.0 x 10 -1 M) with the determination coefficient of 0.9966 and slope of 15.1 ± 0.1 mV decades -1 . The limit of detection is 1.9 x 10 -7 M. The electrode has a fast response time of 18 s and a working pH range of 4-8. The proposed membrane shows excellent discriminating ability towards Hf 4+ ion with regard to several alkali, alkaline earth transition and heavy metal ions. It can be used over a period of 1.5 months with good reproducibility. It is successfully applied for direct determination of Hf 4+ in solutions by standard addition method for real sample analysis

High-temperature oxidation of silicide-aluminide layer on the TiAl6V4 alloy prepared by liquid-phase siliconizing

Czech Academy of Sciences Publication Activity Database

Kubatík, Tomáš František

2016-01-01

Roč. 50, č. 2 (2016), s. 257-261 ISSN 1580-2949 Institutional support: RVO:61389021 Keywords : TiAl6V4 * silicides * high-temperature oxidation * liquid-phase silicon izing Subject RIV: JG - Metallurgy Impact factor: 0.436, year: 2016

Study of hafnium (IV) oxide nanoparticles synthesized by polymerized complex and polymer precursor derived sol-gel methods

KAUST Repository

Ramos-Gonzá lez, R.; Garcí a-Cerda, L. A.; Alshareef, Husam N.; Gnade, Bruce E.; Quevedo-Ló pez, Manuel Angel Quevedo

2010-01-01

This work reports the preparation and characterization of hafnium (IV) oxide (HfO2) nanoparticles grown by derived sol-gel routes that involves the formation of an organic polymeric network. A comparison between polymerized complex (PC) and polymer precursor (PP) methods is presented. For the PC method, citric acid (CA) and ethylene glycol (EG) are used as the chelating and polymerizable reagents, respectively. In the case of PP method, poly(acrylic acid) (PAA) is used as the chelating reagent. In both cases, different precursor gels were prepared and the hafnium (IV) chloride (HfCl4) molar ratio was varied from 0.1 to 1.0 for the PC method and from 0.05 to 0.5 for the PP method. In order to obtain the nanoparticles, the precursors were heat treated at 500 and 800 °C. The thermal characterization of the precursor gels was carried out by thermogravimetric analysis (TGA) and the structural and morphological characterization by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The XRD patterns of the samples obtained by both methods shows the formation of HfO2 at 500 °C with monoclinic crystalline phase. The PC method exhibited also the cubic phase. Finally, the HfO2 nanoparticles size (4 to 11 nm) was determined by TEM and XRD patterns. © (2010) Trans Tech Publications.

Study of hafnium (IV) oxide nanoparticles synthesized by polymerized complex and polymer precursor derived sol-gel methods

KAUST Repository

Ramos-González, R.

2010-03-01

This work reports the preparation and characterization of hafnium (IV) oxide (HfO2) nanoparticles grown by derived sol-gel routes that involves the formation of an organic polymeric network. A comparison between polymerized complex (PC) and polymer precursor (PP) methods is presented. For the PC method, citric acid (CA) and ethylene glycol (EG) are used as the chelating and polymerizable reagents, respectively. In the case of PP method, poly(acrylic acid) (PAA) is used as the chelating reagent. In both cases, different precursor gels were prepared and the hafnium (IV) chloride (HfCl4) molar ratio was varied from 0.1 to 1.0 for the PC method and from 0.05 to 0.5 for the PP method. In order to obtain the nanoparticles, the precursors were heat treated at 500 and 800 °C. The thermal characterization of the precursor gels was carried out by thermogravimetric analysis (TGA) and the structural and morphological characterization by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The XRD patterns of the samples obtained by both methods shows the formation of HfO2 at 500 °C with monoclinic crystalline phase. The PC method exhibited also the cubic phase. Finally, the HfO2 nanoparticles size (4 to 11 nm) was determined by TEM and XRD patterns. © (2010) Trans Tech Publications.

Attempt to produce silicide fuel elements in Indonesia

International Nuclear Information System (INIS)

Soentono, S.; Suripto, A.

1991-01-01

After the successful experiment to produce U 3 Si 2 powder and U 3 Si 2 -Al fuel plates using depleted U and Si of semiconductor quality, silicide fuel was synthesized using x -Al available at the Fuel Element Production Installation (FEPI) at Serpong, Indonesia. Two full-size U 3 Si 2 -Al fuel elements, having similar specifications to the ones of U 3 O 8 -Al for the RSG-GAS (formerly known as MPR-30), have been produced at the FEPI. All quality controls required have been imposed to the feeds, intermediate, as well as final products throughout the production processes of the two fuel elements. The current results show that these fuel elements are qualified from fabrication point of view, therefore it is expected that they will be permitted to be tested in the RSG-GAS, sometime by the end of 1989, for normal (∝50%) and above normal burn-up. (orig.)

Preliminary investigations on the use of uranium silicide targets for fission Mo-99 production

Energy Technology Data Exchange (ETDEWEB)

Cols, H.; Cristini, P.; Marques, R.

1997-08-01

The National Atomic Energy Commission (CNEA) of Argentine Republic owns and operates an installation for production of molybdenum-99 from fission products since 1985, and, since 1991, covers the whole national demand of this nuclide, carrying out a program of weekly productions, achieving an average activity of 13 terabecquerel per week. At present they are finishing an enlargement of the production plant that will allow an increase in the volume of production to about one hundred of terabecquerel. Irradiation targets are uranium/aluminium alloy with 90% enriched uranium with aluminium cladding. In view of international trends held at present for replacing high enrichment uranium (HEU) for enrichment values lower than 20 % (LEU), since 1990 the authors are in contact with the RERTR program, beginning with tests to adapt their separation process to new irradiation target conditions. Uranium silicide (U{sub 3}Si{sub 2}) was chosen as the testing material, because it has an uranium mass per volume unit, so that it allows to reduce enrichment to a value of 20%. CNEA has the technology for manufacturing miniplates of uranium silicide for their purposes. In this way, equivalent amounts of Molybdenum-99 could be obtained with no substantial changes in target parameters and irradiation conditions established for the current process with Al/U alloy. This paper shows results achieved on the use of this new target.

Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

KAUST Repository

Bahabry, R. R.; Gumus, A.; Kutbee, A. T.; Wehbe, N.; Ahmed, S. M.; Ghoneim, M. T.; Lee, K. -T.; Rogers, J. A.; Hussain, M. M.

2016-01-01

We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.

Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

KAUST Repository

Bahabry, R. R.

2016-11-30

We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.

Temperature and thickness dependence of the grain boundary scattering in the Ni–Si silicide films formed on silicon substrate at 500 °C by RTA

International Nuclear Information System (INIS)

Utlu, G.; Artunç, N.; Selvi, S.

2012-01-01

Highlights: ► It is a systematic study of various thicknesses (18–290 nm) of Ni–Si silicide films. ► The temperature-dependent resistivity measurements of the films are studied. ► Resistivity variation of the films with temperature exhibits an unusual behavior. ► Parallel-resistor formula is reduced to Matthiessen's rule in this study. ► Reflection coefficients have been found in a wide temperature and thickness range. - Abstract: The temperature-dependent resistivity measurements of Ni–Si silicide films with 18–290 nm thicknesses are studied as a function of temperature and film thickness over the temperature range of 100–900 K. The most striking behavior is that the variation of the resistivity of the films with temperature exhibits an unusual behavior. The total resistivity of the Ni–Si silicide films in this work increases linearly with temperature up to a T m temperature, thereafter decreases rapidly and finally reaches zero. Our analyses have shown that in the temperature range of 100 to T m (K), parallel-resistor formula reduces to Matthiessen's rule and θ D Debye temperature becomes independent of the temperature for the given thickness range, whereas at high temperatures (above T m ) it increases slightly with thickness. θ D Debye temperature have been found to be about 400–430 K for the films. We have also shown that for temperature range of 100 to T m (K), linear variation of the resistivity of the silicide films with temperature has been caused from both grain-boundary scattering and electron–phonon scattering. That is why, resistivity data could have been analyzed in terms of the Mayadas–Schatzkes (M–S) model successfully. Theoretical and experimental values of reflection coefficients have been calculated by analyzing resistivity data using M–S model. According to our analysis, R increases with decreasing film thickness for a given temperature, while it is almost constant for the thickness range of 200–67 nm and 47�

Rapid formation of nanocrystalline HfO2 powders from amorphous hafnium hydroxide under ultrasonically assisted hydrothermal treatment

International Nuclear Information System (INIS)

Meskin, Pavel E.; Sharikov, Felix Yu.; Ivanov, Vladimir K.; Churagulov, Bulat R.; Tretyakov, Yury D.

2007-01-01

Peculiarities of hafnium hydroxide hydrothermal decomposition were studied by in situ heat flux calorimetry for the first time. It was shown that this process occurs in one exothermal stage (ΔH = -17.95 kJ mol -1 ) at 180-250 deg. C resulting in complete crystallization of amorphous phase with formation of pure monoclinic HfO 2 . It was found that the rate of m-HfO 2 formation can be significantly increased by combining hydrothermal treatment with simultaneous ultrasonic activation

Improvement of aging kinetics and precipitate size refinement in Mg–Sn alloys by hafnium additions

Energy Technology Data Exchange (ETDEWEB)

Behdad, S. [Department of Mechanical and Materials Engineering, Florida International University, Miami, FL 33174 (United States); Zhou, L. [Department of Materials Science and Engineering and Advanced Materials Processing and Analysis Center, University of Central Florida, Orlando, FL 32816 (United States); Henderson, H.B.; Manuel, M.V. [Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611 (United States); Sohn, Y. [Department of Materials Science and Engineering and Advanced Materials Processing and Analysis Center, University of Central Florida, Orlando, FL 32816 (United States); Agarwal, A. [Department of Mechanical and Materials Engineering, Florida International University, Miami, FL 33174 (United States); Boesl, B., E-mail: bboesl@fiu.edu [Department of Mechanical and Materials Engineering, Florida International University, Miami, FL 33174 (United States)

2016-01-10

Two Mg–Sn alloys were microalloyed by addition of Hafnium and their age-hardening response was studied at 200 °C. Time to reach peak hardness was significantly reduced and improved by Hf addition. TEM study showed Hf clusters in the close vicinity and at the surface of Mg{sub 2}Sn precipitates, which confirms that Hf clusters act as additional nucleation centers for Mg{sub 2}Sn precipitate formation. Our results support the validity of thermokinetic criterion proposed by Mendis for selection of microalloying elements in order to refine precipitate size, accelerate aging kinetics and enhance peak hardness.

Vertically grown multiwalled carbon nanotube anode and nickel silicide integrated high performance microsized (1.25 μl) microbial fuel cell

KAUST Repository

Mink, Justine E.

2012-02-08

Microbial fuel cells (MFCs) are an environmentally friendly method for water purification and self-sustained electricity generation using microorganisms. Microsized MFCs can also be a useful power source for lab-on-a-chip and similar integrated devices. We fabricated a 1.25 μL microsized MFC containing an anode of vertically aligned, forest type multiwalled carbon nanotubes (MWCNTs) with a nickel silicide (NiSi) contact area that produced 197 mA/m 2 of current density and 392 mW/m 3 of power density. The MWCNTs increased the anode surface-to-volume ratio, which improved the ability of the microorganisms to couple and transfer electrons to the anode. The use of nickel silicide also helped to boost the output current by providing a low resistance contact area to more efficiently shuttle electrons from the anode out of the device. © 2012 American Chemical Society.

The fabrication of metal silicide nanodot arrays using localized ion implantation

International Nuclear Information System (INIS)

Han, Jin; Kim, Tae-Gon; Min, Byung-Kwon; Lee, Sang Jo

2010-01-01

We propose a process for fabricating nanodot arrays with a pitch size of less than 25 nm. The process consists of localized ion implantation in a metal thin film on a Si wafer using a focused ion beam (FIB), followed by chemical etching. This process utilizes the etching resistivity changes of the ion beam irradiated region that result from metal silicide formation by ion implantation. To control the nanodot diameter, a threshold ion dose model is proposed using the Gaussian distribution of the ion beam intensities. The process is verified by fabricating nanodots with various diameters. The mechanism of etching resistivity is investigated via x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES).

Influence of iron and beryllium additions on heat resistance of silicide coatings on TsMB-30 molybdenum alloy

International Nuclear Information System (INIS)

Zajtseva, A.L.; Fedorchuk, N.M.; Lazarev, Eh.M.; Korotkov, N.A.

1985-01-01

Alloying of titanium modified silicide coatings on TsMB-30 molybdenum alloy with iron or beryllium is stated to improve their protective properties. Coatings with low content of alloying elements have the best protective properties. Service life of coatings is determined by the formed oxide film and phase transformations taking place in the coating

Reclamation and reuse of LEU silicide fuel from manufacturing scrap

International Nuclear Information System (INIS)

Gale, G.R.; Pace, B.W.; Evans, R.S.

2004-01-01

In order to provide an understanding of the organization which is the sole supplier of United States plate type research and test reactor fuel and LEU core conversions, a brief description of the structure and history is presented. Babcock and Wilcox (B and W) is a part of McDermott International, Inc. which is a large diversified corporation employing over 20,000 people primarily in engineering and construction for the off-shore oil and power generation industries throughout the world. B and W provides many energy related products requiring precision machining and high quality systems. This is accomplished by using state-of-the-art equipment, technology and highly skilled people. The RTRFE group within B and W has the ability to produce various complexly shaped fuel elements with a wide variety of fuels and enrichments. B and W RTRFE has fabricated over 200,000 plates since 1981 and gained the diversified experience necessary to satisfy many customer requirements. This accomplishment was possible with the support of McDermott International and all of its resources. B and W has always had a commitment to high quality and integrity. This is apparent by the success and longevity (125 years) of the company. A lower cost to convert cores to LEU provides direct support to RERTR and demonstrates Babcock and Wilcox's commitment to the program. As a supporter of RERTR reactor conversion from HEU to LEU, B and W has contributed a significant amount of R and D money to improve the silicide fuel process which ultimately lowers the LEU core costs. In the most recent R and D project, B and W is constructing a LEU silicide reclamation facility to re-use the unirradiated fuel scrap generated from the production process. Remanufacturing use of this fuel completes the fuel cycle and provides a contribution to LEU cores by reducing scrap inventory and handling costs, lowering initial purchase of fuel due to increasing the process yields, and lowering the replacement costs. This

Status of the atomized uranium silicide fuel development at KAERI

Energy Technology Data Exchange (ETDEWEB)

Kim, C.K.; Kim, K.H.; Park, H.D.; Kuk, I.H. [Korea Atomic Energy Research Institute, Taejon (Korea, Republic of)

1997-08-01

While developing KMRR fuel fabrication technology an atomizing technique has been applied in order to eliminate the difficulties relating to the tough property of U{sub 3}Si and to take advantage of the rapid solidification effect of atomization. The comparison between the conventionally comminuted powder dispersion fuel and the atomized powder dispersion fuel has been made. As the result, the processes, uranium silicide powdering and heat treatment for U{sub 3}Si transformation, become simplified. The workability, the thermal conductivity and the thermal compatibility of fuel meat have been investigated and found to be improved due to the spherical shape of atomized powder. In this presentation the overall developments of atomized U{sub 3}Si dispersion fuel and the planned activities for applying the atomizing technique to the real fuel fabrication are described.

Interaction of copper metallization with rare-earth metals and silicides

International Nuclear Information System (INIS)

Molnar, G. L.; Peto, G.; Zsoldos, E.; Horvath, Z. E.

2001-01-01

Solid-phase reactions of copper films with underlying gadolinium, erbium, and erbium - silicide layers on Si(100) substrates were investigated. For the phase analysis, x-ray diffraction and cross-sectional transmission electron microscopy were used. In the case of Cu/Gd/Si(100), an orthorhombic GdSi 2 formed, and, at higher temperatures, copper aggregated into islands. Annealed Cu/Er/Si(100) samples resulted in a hexagonal Er 5 Si 3 phase. In the Cu/ErSi 2-x /Si system, the copper catalyzes the transformation of the highly oriented hexagonal ErSi 2-x phase into hexagonal Er 5 Si 3 . Diverse phase developments of the samples with Gd and Er are based on reactivity differences of the two rare-earth metals. [copyright] 2001 American Institute of Physics

Characterization of uranium silicide powder using XRD

International Nuclear Information System (INIS)

Garcia, Rafael H.L.; Saliba-Silva, Adonis M.; Carvalho, Elita F.U.; Lima, Nelson B.; Ichikawa, Rodrigo U.; Martinez, Luiz G.

2013-01-01

Uranium silicide (U 3 Si 2 ) is an intermetallic used as nuclear fuel in most modern MTR - Materials Test Reactor. Dispersed in aluminum, this fuel allows high uranium densities, up to 4.8 gU/cm 3 . At IPEN, the fabrication of fuel elements based on U 3 Si 2 for the IEA-R1 reactor is carried out in the Nuclear Fuel Center (CCN), by vacuum induction melting of uranium and silicon, followed by grinding. Before employed in a nuclear reactor, U 3 Si 2 must be submitted to a strict quality control, which includes granulometry, density, X-ray radiography for dispersion homogeneity, chemical and crystallographic characterization. Concerning phase composition for a qualified fuel, the fraction of U 3 Si 2 should be higher than 80wt.%. Aiming at the development of a routine methodology for quantification of phases via analysis of XRD data using the Rietved method, six samples from two production baths of CCN were submitted to X-ray diffraction. The data were analyzed using software GSAS and line profile analysis methods. The results suggest that fusion product have preferred orientation and grinding step is important for a better refinement. (author)

Trace metal assay of uranium silicide fuel

International Nuclear Information System (INIS)

Kulkarni, M.J.; Argekar, A.A.; Thulasidas, S.K.; Dhawale, B.A.; Rajeswari, B.; Adya, V.C.; Purohit, P.J.; Neelam, G.; Bangia, T.R.; Page, A.G.; Sastry, M.D.; Iyer, R.H.

1994-01-01

A comprehensive trace metal assay of uranium silicide, a fuel for nuclear research reactors that employs low-enrichment uranium, is carried out by atomic spectrometry. Of the list of specification elements, 21 metallic elements are determined by a direct current (dc) arc carrier distillation technique; the rare earths yttrium and zirconium are chemically separated from the major matrix followed by a dc arc/inductively coupled argon plasma (ICP) excitation technique in atomic emission spectrometry (AES); silver is determined by electrothermal atomization-atomic absorption spectrometry (ETA-AAS) without prior chemical separation of the major matrix. Gamma radioactive tracers are used to check the recovery of rare earths during the chemical separation procedure. The detection limits for trace metallics vary in the 0.1- to 40-ppm range. The precision of the determinations as evaluated from the analysis of the synthetic sample with intermediate range analyte concentration is better than 25% relative standard deviation (RSD) for most of the elements employing dc arc-AES, while that for silver determination by ETS-AAS is 10% RSD. The precision of the determinations for four crucially important rare earths by ICP-AES is better than 3% RSD

Solvent extraction of hafnium(IV) by dinonylnaphthalene sulfonic acid from mixed aqueous-organic media

International Nuclear Information System (INIS)

Hala, J.; Piperkovova, H.

1979-01-01

The extraction of hafnium(IV) by heptane and toluene solutions of dinonylnaphthalene sulfonic acid (HD) from mixed aqueous-organic solutions has been studied. Alcohols, ketones, carboxylic acids, cyclic ethers, dimethylsulfoxide and dimethylformamide were used as the organic component of the mixed phase. Methanol, ethanol, formic acid and dioxane increased the extractability of Hf(IV) whereas other solvents showed only an antagonistic effect. The results were discussed from the point of view of the changes in micellar structure of HD, and compared with the uptake of Hf(IV) by resinous cation exchangers. The solubilization by HD of alcohols, carboxylic acids and dimethylsulfoxide was demonstrated by using the corresponding 14 C and 35 S labelled compounds. (author)

The interfacial orientation relationship of oxide nanoparticles in a hafnium-containing oxide dispersion-strengthened austenitic stainless steel

Energy Technology Data Exchange (ETDEWEB)

Miao, Yinbin, E-mail: miao2@illinois.edu [Department of Nuclear, Plasma and Radiological Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (United States); Mo, Kun [Nuclear Engineering Division, Argonne National Laboratory, Lemont, IL 60493 (United States); Cui, Bai [Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588 (United States); Department of Material Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (United States); Chen, Wei-Ying [Department of Nuclear, Plasma and Radiological Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (United States); Miller, Michael K.; Powers, Kathy A. [Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37830 (United States); McCreary, Virginia; Gross, David [Department of Material Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (United States); Almer, Jonathan [X-ray Science Division, Argonne National Laboratory, Lemont, IL 60493 (United States); Robertson, Ian M. [Department of Material Science and Engineering, University of Wisconsin-Madison, Madison, WA 53706 (United States); Department of Material Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (United States); Stubbins, James F. [Department of Nuclear, Plasma and Radiological Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (United States)

2015-03-15

This work reports comprehensive investigations on the orientation relationship of the oxide nanoparticles in a hafnium-containing austenitic oxide dispersion-strengthened 316 stainless steel. The phases of the oxide nanoparticles were determined by a combination of scanning transmission electron microscopy–electron dispersive X-ray spectroscopy, atom probe tomography and synchrotron X-ray diffraction to be complex Y–Ti–Hf–O compounds with similar crystal structures, including bixbyite Y{sub 2}O{sub 3}, fluorite Y{sub 2}O{sub 3}–HfO{sub 2} solid solution and pyrochlore (or fluorite) Y{sub 2}(Ti,Hf){sub 2−x}O{sub 7−x}. High resolution transmission electron microscopy was used to characterize the particle–matrix interfaces. Two different coherency relationships along with one axis-parallel relation between the oxide nanoparticles and the steel matrix were found. The size of the nanoparticles significantly influences the orientation relationship. The results provide insight into the relationship of these nanoparticles with the matrix, which has implications for interpreting material properties as well as responses to radiation. - Highlights: • The oxide nanoparticles in a hafnium-containing austenitic ODS were characterized. • The nanoparticles are Y–Hf–Ti–O enriched phases according to APT and STEM–EDS. • Two coherency and an axis-parallel orientation relationships were found by HR-TEM. • Particle size has a prominent effect on the orientation relationship (OR). • Formation mechanism of the oxide nanoparticles was discussed based on the ORs.

The series production in a standardized fabrication line for silicide fuels and commercial aspects

International Nuclear Information System (INIS)

Wehner, E.L.; Hassel, H.W.

1987-01-01

NUKEM has been responsible for the development and fabrication of LEU fuel elements for MTR reactors under the frame of the German AF program since 1979. The AF program is part of the international RERTR efforts, which were initiated by the INFCE Group in 1978. This paper describes the actual status of development and the transition from the prototype to the series production in a standardized manufacturing line for silicide fuels at NUKEM. Technical provisions and a customer oriented standardized product range aim at an economized manufacturing. (Author)

Behavior of silicon in nitric media. Application to uranium silicides fuels reprocessing; Comportement du silicium en milieu nitrique. Application au retraitement des combustibles siliciures d'uranium

Energy Technology Data Exchange (ETDEWEB)

Cheroux, L

2001-07-01

Uranium silicides are used in some research reactors. Reprocessing them is a solution for their cycle end. A list of reprocessing scenarios has been set the most realistic being a nitric dissolution close to the classic spent fuel reprocessing. This uranium silicide fuel contains a lot of silicon and few things are known about polymerization of silicic acid in concentrated nitric acid. The study of this polymerization allows to point out the main parameters: acidity, temperature, silicon concentration. The presence of aluminum seems to speed up heavily the polymerization. It has been impossible to find an analytical technique smart and fast enough to characterize the first steps of silicic acid polymerization. However the action of silicic species on emulsions stabilization formed by mixing them with an organic phase containing TBP has been studied, Silicon slows down the phase separation by means of oligomeric species forming complex with TBP. The existence of these intermediate species is short and heating can avoid any stabilization. When non irradiated uranium silicide fuel is attacked by a nitric solution, aluminum and uranium are quickly dissolved whereas silicon mainly stands in solid state. That builds a gangue of hydrated silica around the uranium silicide particulates without preventing uranium dissolution. A small part of silicon passes into the solution and polymerize towards the highly poly-condensed forms, just 2% of initial silicon is still in molecular form at the end of the dissolution. A thermal treatment of the fuel element, by forming inter-metallic phases U-Al-Si, allows the whole silicon to pass into the solution and next to precipitate. The behavior of silicon in spent fuels should be between these two situations. (author)

Milling uranium silicide powder for dispersion nuclear fuels

Energy Technology Data Exchange (ETDEWEB)

Vieira, E.; Silva, D.G.; Souza, J.A.B.; Durazzo, M. [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil); Riella, H.G. [Universidade Federal de Santa Catarina (UFSC), Florianopolis, SC (Brazil)

2009-07-01

Full text: Uranium silicide (U3Si2) is presently considered the best fuel qualified so far in terms of uranium loading and performance. Stability of the U3Si2 fuel with uranium density of 4.8 g/cm3 was confirmed by burnup stability tests performed during the Reduced Enrichment for Research and Test Reactors (RERTR) program. This fuel was chosen to compose the first core of the new Brazilian Multipurpose Research Reactor (RMB), planned to be constructed in the next years. This new reactor will consume bigger quantities of U3Si2 powder, when compared with the small consumption of the IEA-R1 research reactor of IPEN-CNEN/SP, the unique MTR type research reactor operating in the country. At the present time, the milling operation of U3Si2 ingots is made manually. In order to increase the powder production capacity, the manual milling must be replaced by an automated procedure. This paper describes a new milling machine and procedure developed to produce U3Si2 powder with higher efficiency. (author)

Hafnium oxide nanoparticles: toward an in vitro predictive biological effect?

International Nuclear Information System (INIS)

Marill, Julie; Anesary, Naeemunnisa Mohamed; Zhang, Ping; Vivet, Sonia; Borghi, Elsa; Levy, Laurent; Pottier, Agnes

2014-01-01

Hafnium oxide, NBTXR3 nanoparticles were designed for high dose energy deposition within cancer cells when exposed to ionizing radiation. The purpose of this study was to assess the possibility of predicting in vitro the biological effect of NBTXR3 nanoparticles when exposed to ionizing radiation. Cellular uptake of NBTXR3 nanoparticles was assessed in a panel of human cancer cell lines (radioresistant and radiosensitive) by transmission electron microscopy. The radioenhancement of NBTXR3 nanoparticles was measured by the clonogenic survival assay. NBTXR3 nanoparticles were taken up by cells in a concentration dependent manner, forming clusters in the cytoplasm. Differential nanoparticle uptake was observed between epithelial and mesenchymal or glioblastoma cell lines. The dose enhancement factor increased with increase NBTXR3 nanoparticle concentration and radiation dose. Beyond a minimum number of clusters per cell, the radioenhancement of NBTXR3 nanoparticles could be estimated from the radiation dose delivered and the radiosensitivity of the cancer cell lines. Our preliminary results suggest a predictable in vitro biological effect of NBTXR3 nanoparticles exposed to ionizing radiation

Simultaneous aluminizing and chromizing of steels to form (Fe,Cr){sub 3}Al coatings and Ge-doped silicide coatings of Cr-Zr base alloys

Energy Technology Data Exchange (ETDEWEB)

Zheng, M.; He, Y.R.; Rapp, R.A. [Ohio State Univ., Columbus, OH (United States). Dept. of Materials Science and Engineering

1997-12-01

A halide-activated cementation pack involving elemental Al and Cr powders has been used to achieve surface compositions of approximately Fe{sub 3}Al plus several percent Cr for low alloy steels (T11, T2 and T22) and medium carbon steel (1045 steel). A two-step treatment at 925 C and 1150 C yields the codeposition and diffusion of aluminum and chromium to form dense and uniform ferrite coatings of about 400 {micro}m thickness, while preventing the formation of a blocking chromium carbide at the substrate surfaces. Upon cyclic oxidation in air at 700 C, the coated steel exhibits a negligible 0.085 mg/cm{sup 2} weight gain for 1900 one-hour cycles. Virtually no attack was observed on coated steels tested at ABB in simulated boiler atmospheres at 500 C for 500 hours. But coatings with a surface composition of only 8 wt% Al and 6 wt% Cr suffered some sulfidation attack in simulated boiler atmospheres at temperatures higher than 500 C for 1000 hours. Two developmental Cr-Zr based Laves phase alloys (CN129-2 and CN117(Z)) were silicide/germanide coated. The cross-sections of the Ge-doped silicide coatings closely mimicked the microstructure of the substrate alloys. Cyclic oxidation in air at 1100 C showed that the Ge-doped silicide coating greatly improved the oxidation resistance of the Cr-Zr based alloys.

Ytterbium silicide (YbSi{sub 2}). A promising thermoelectric material with a high power factor at room temperature

Energy Technology Data Exchange (ETDEWEB)

Tanusilp, Sora-at; Ohishi, Yuji; Muta, Hiroaki [Graduate School of Engineering, Osaka University, Suita, Osaka (Japan); Yamanaka, Shinsuke [Graduate School of Engineering, Osaka University, Suita, Osaka (Japan); Research Institute of Nuclear Engineering, University of Fukui, Tsuruga (Japan); Nishide, Akinori [Graduate School of Engineering, Osaka University, Suita, Osaka (Japan); Center for Exploratory Research, Research and Development Group, Hitachi, Ltd., Kokubunji, Tokyo (Japan); Hayakawa, Jun [Center for Exploratory Research, Research and Development Group, Hitachi, Ltd., Kokubunji, Tokyo (Japan); Kurosaki, Ken [Graduate School of Engineering, Osaka University, Suita, Osaka (Japan); Research Institute of Nuclear Engineering, University of Fukui, Tsuruga (Japan); JST, PRESTO, Kawaguchi, Saitama (Japan)

2018-02-15

Metal silicide-based thermoelectric (TE) materials have attracted attention in the past two decades, because they are less toxic, with low production cost and high chemical stability. Here, we study the TE properties of ytterbium silicide YbSi{sub 2} with a specific layered structure and the mixed valence state of Yb{sup 2+} and Yb{sup 3+}. YbSi{sub 2} exhibits large Seebeck coefficient, S, accompanied by high electrical conductivity, σ, leading to high power factor, S{sup 2}σ, of 2.2 mW m{sup -1} K{sup -2} at room temperature, which is comparable to those of state-of-the-art TE materials such as Bi{sub 2}Te{sub 3} and PbTe. Moreover, YbSi{sub 2} exhibits high Grueneisen parameter of 1.57, which leads to relatively low lattice thermal conductivity, κ{sub lat}, of 3.0 W m{sup -1} K{sup -1} at room temperature. The present study reveals that YbSi{sub 2} can be a good candidate of TE materials working near room temperature. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Nano-scale Radiotherapy-NBTXR3 Hafnium Oxide Nanoparticles as Promising Cancer Therapy

International Nuclear Information System (INIS)

Maggiorella, L.; Barouch, G.; Devaux, C.; Pottier, A.; Levy, L.; Deutsch, E.; Bourhis, J.; Borghi, E.

2011-01-01

Complete text of publication follows: Background: There is considerable interest in approaches that could improve the therapeutic window of radiotherapy, which represents a crucial modality of treatment in oncology. We present the rationale for designing NBTXR3 nanoparticles activated by radiotherapy and validate the concept. We performed the Monte Carlo calculations for the first time based on the 'local model' simulation that showed a dose enhancement of radiation to tumour cells of approximately nine-fold. NBTXR3 was shown to deposit high energy when the ionizing radiation source is 'on' and to have chemically inert behavior in cellular and subcellular systems demonstrated by very good systemic tolerance, thus decreasing potential health hazards. Material and Methods: We used conventional methods, implemented in different ways, to explore interactions of high Z matter and ionizing radiation with biological systems. In addition, microtomography was performed to explore the nanoparticle volume occupancy inside the tumour and its persistence overtime in mouse tumour models. The antitumour activity of NBTXR3 and tolerance were evaluated in Ewing tumour (A673) and fibrosarcoma (HT1080) using high energy source. Results and Conclusion: We created and developed NBTXR3 nanoparticles with a crystalline hafnium oxide core which provide high electron density structure and inert behavior in biological media. NBTXR3 nanoparticles' characteristics, size, charge and shape, allow for efficient interaction with biological entities, cell membrane binding and cellular uptake. The nanoparticles were shown to form clusters at the subcellular level in tumour models. Of most importance, we show NBTXR3 intra-tumour bioavailability with dispersion of nanoparticles in the three dimensions and persistence within the tumour structure, supporting the use of NBTXR3 as effective antitumour therapeutic agent. Antitumour activity of NBTXR3 showed marked advantage in terms of survival, tumour

A fast response hafnium selective polymeric membrane electrode based on N,N'-bis({alpha}-methyl-salicylidene)-dipropylenetriamine as a neutral carrier

Energy Technology Data Exchange (ETDEWEB)

Rezaei, B. [Department of Chemistry, Isfahan University of Technology, Isfahan 84156-83111 (Iran, Islamic Republic of)], E-mail: rezaei@cc.iut.ac.ir; Meghdadi, S.; Zarandi, R. Fazel [Department of Chemistry, Isfahan University of Technology, Isfahan 84156-83111 (Iran, Islamic Republic of)

2008-08-30

In this study a new hafnium selective sensor was fabricated from polyvinylchloride (PVC) matrix membrane containing neutral carrier N,N'-bis({alpha}-methyl-salicylidene)-dipropylenetriamine (Mesaldpt) as a new ionophore, sodium tetraphenyl borate (NaTPB) as anionic discriminator and dioctyl phthalate (DOP) as plasticizing solvent mediator in tetrahydrofuran solvent. The electrode exhibits Nernstian response for Hf{sup 4+} (Hafnium(IV)) over a wide concentration range (2.0 x 10{sup -7} to 1.0 x 10{sup -1} M) with the determination coefficient of 0.9966 and slope of 15.1 {+-} 0.1 mV decades{sup -1}. The limit of detection is 1.9 x 10{sup -7} M. The electrode has a fast response time of 18 s and a working pH range of 4-8. The proposed membrane shows excellent discriminating ability towards Hf{sup 4+} ion with regard to several alkali, alkaline earth transition and heavy metal ions. It can be used over a period of 1.5 months with good reproducibility. It is successfully applied for direct determination of Hf{sup 4+} in solutions by standard addition method for real sample analysis.

Rate Theory Modeling and Simulations of Silicide Fuel at LWR Conditions

Energy Technology Data Exchange (ETDEWEB)

Miao, Yinbin [Argonne National Lab. (ANL), Argonne, IL (United States); Ye, Bei [Argonne National Lab. (ANL), Argonne, IL (United States); Mei, Zhigang [Argonne National Lab. (ANL), Argonne, IL (United States); Hofman, Gerard [Argonne National Lab. (ANL), Argonne, IL (United States); Yacout, Abdellatif [Argonne National Lab. (ANL), Argonne, IL (United States)

2015-12-10

Uranium silicide (U₃Si₂) fuel has higher thermal conductivity and higher uranium density, making it a promising candidate for the accident-tolerant fuel (ATF) used in light water reactors (LWRs). However, previous studies on the fuel performance of U₃Si₂, including both experimental and computational approaches, have been focusing on the irradiation conditions in research reactors, which usually involve low operation temperatures and high fuel burnups. Thus, it is important to examine the fuel performance of U₃Si₂ at typical LWR conditions so as to evaluate the feasibility of replacing conventional uranium dioxide fuel with this silicide fuel material. As in-reactor irradiation experiments involve significant time and financial cost, it is appropriate to utilize modeling tools to estimate the behavior of U₃Si₂ in LWRs based on all those available research reactor experimental references and state-of-the-art density functional theory (DFT) calculation capabilities at the early development stage. Hence, in this report, a comprehensive investigation of the fission gas swelling behavior of U₃Si₂ at LWR conditions is introduced. The modeling efforts mentioned in this report was based on the rate theory (RT) model of fission gas bubble evolution that has been successfully applied for a variety of fuel materials at devious reactor conditions. Both existing experimental data and DFT-calculated results were used for the optimization of the parameters adopted by the RT model. Meanwhile, the fuel-cladding interaction was captured by the coupling of the RT model with simplified mechanical correlations. Therefore, the swelling behavior of U₃Si₂ fuel and its consequent interaction with cladding in LWRs was predicted by the rate theory modeling, providing valuable information for the development of U₃Si₂ fuel as an accident

Hafnium-doped hydroxyapatite nanoparticles with ionizing radiation for lung cancer treatment.

Science.gov (United States)

Chen, Min-Hua; Hanagata, Nobutaka; Ikoma, Toshiyuki; Huang, Jian-Yuan; Li, Keng-Yuan; Lin, Chun-Pin; Lin, Feng-Huei

2016-06-01

Recently, photodynamic therapy (PDT) is one of the new clinical options by generating cytotoxic reactive oxygen species (ROS) to kill cancer cells. However, the optical approach of PDT is limited by tissue penetration depth of visible light. In this study, we propose that a ROS-enhanced nanoparticle, hafnium-doped hydroxyapatite (Hf:HAp), which is a material to yield large quantities of ROS inside the cells when the nanoparticles are bombarded with high penetrating power of ionizing radiation. Hf:HAp nanoparticles are generated by wet chemical precipitation with total doping concentration of 15mol% Hf(4+) relative to Ca(2+) in HAp host material. The results show that the HAp particles could be successfully doped with Hf ions, resulted in the formation of nano-sized rod-like shape and with pH-dependent solubility. The impact of ionizing radiation on Hf:HAp nanoparticles is assessed by using in-vitro and in-vivo model using A549 cell line. The 2',7'-dichlorofluorescein diacetate (DCFH-DA) results reveal that after being exposed to gamma rays, Hf:HAp could significantly lead to the formation of ROS in cells. Both cell viability (WST-1) and cytotoxicity (LDH) assay show the consistent results that A549 lung cancer cell lines are damaged with changes in the cells' ROS level. The in-vivo studies further demonstrate that the tumor growth is inhibited owing to the cells apoptosis when Hf:HAp nanoparticles are bombarded with ionizing radiation. This finding offer a new therapeutic method of interacting with ionizing radiation and demonstrate the potential of Hf:HAp nanoparticles in tumor treatment, such as being used in a palliative treatment after lung surgical procedure. Photodynamic therapy (PDT) is one of the new clinical options by generating cytotoxic reactive oxygen species (ROS) to kill cancer cells. Unfortunately, the approach of PDT is usually limited to the treatment of systemic disease and deeper tumor, due to the limited tissue penetration depth of visible

CEMS Investigations of Fe-Silicide Phases Formed by the Method of Concentration Controlled Phase Selection

Energy Technology Data Exchange (ETDEWEB)

Moodley, M. K.; Bharuth-Ram, K. [University of Durban-Westville, Physics Department (South Africa); Waal, H. de; Pretorius, R. [University of Stellenbosch, Physics Department (South Africa)

2002-03-15

Conversion electron Moessbauer spectroscopy (CEMS) measurements have been made on Fe-silicide samples formed using the method of concentration controlled phase selection. To prepare the samples a 10 nm layer of Fe{sub 30}M{sub 70} (M=Cr, Ni) was evaporated onto Si(100) surfaces, followed by evaporation of a 60 nm Fe layer. Diffusion of the Fe into the Si substrate and the formation of different Fe-Si phases was achieved by subjecting the evaporated samples to a series of heating stages, which consisted of (a) a 10 min anneal at 800 deg. C plus etch of the residual surface layer, (b) a further 3 hr anneal at 800 deg. C, (c) a 60 mJ excimer laser anneal to an energy density of 0.8 J/cm{sup 2}, and (d) a final 3 hr anneal at 800 deg. C. CEMS measurements were used to track the Fe-silicide phases formed. The CEMS spectra consisted of doublets which, based on established hyperfine parameters, could be assigned to {alpha}- or {beta}-FeSi{sub 2} or cubic FeSi. The spectra showed that {beta}-FeSi{sub 2} had formed already at the first annealing stage. Excimer laser annealing resulted in the formation of a phase with hyperfine parameters consistent with those of {alpha}-FeSi{sub 2}. A further 3 hr anneal at 800 deg. C resulted in complete reversal to the semiconducting {beta}-FeSi{sub 2} phase.

Sub-10 nm low current resistive switching behavior in hafnium oxide stack

Energy Technology Data Exchange (ETDEWEB)

Hou, Y., E-mail: houyi@pku.edu.cn, E-mail: lfliu@pku.edu.cn [Institute of Microelectronics, Peking University, 100871 Beijing (China); IMEC, Kapeldreef 75, B-3001 Heverlee (Belgium); Department of Physics and Astronomy, KU Leuven, Celestijnenlaan 200D, B-3001 Heverlee (Belgium); Celano, U.; Xu, Z.; Vandervorst, W. [IMEC, Kapeldreef 75, B-3001 Heverlee (Belgium); Department of Physics and Astronomy, KU Leuven, Celestijnenlaan 200D, B-3001 Heverlee (Belgium); Goux, L.; Fantini, A.; Degraeve, R.; Youssef, A.; Jurczak, M. [IMEC, Kapeldreef 75, B-3001 Heverlee (Belgium); Liu, L., E-mail: houyi@pku.edu.cn, E-mail: lfliu@pku.edu.cn; Cheng, Y.; Kang, J. [Institute of Microelectronics, Peking University, 100871 Beijing (China)

2016-03-21

In this letter, a tip-induced cell relying on the conductive atomic force microscope is proposed. It is verified as a referable replica of an integrated resistive random access memory (RRAM) device. On the basis of this cell, the functionality of sub-10 nm resistive switching is confirmed in hafnium oxide stack. Moreover, the low current switching behavior in the sub-10 nm dimension is found to be more pronounced than that of a 50 × 50 nm{sup 2} device. It shows better ON/OFF ratio and low leakage current. The enhanced memory performance is ascribed to a change in the shape of the conductive filament as the device dimensions are reduced to sub-10 nm. Therefore, device downscaling provides a promising approach for the resistance optimization that benefits the RRAM array design.

Submicron Features in Higher Manganese Silicide

Directory of Open Access Journals (Sweden)

Yatir Sadia

2013-01-01

Full Text Available The world energy crisis had increased the demand for alternative energy sources and as such is one of the topics at the forefront of research. One way for reducing energy consumption is by thermoelectricity. Thermoelectric effects enable direct conversion of thermal into electrical energy. Higher manganese silicide (HMS, MnSi1.75 is one of the promising materials for applications in the field of thermoelectricity. The abundance and low cost of the elements, combined with good thermoelectric properties and high mechanical and chemical stability at high temperatures, make it very attractive for thermoelectric applications. Recent studies have shown that Si-rich HMS has improved thermoelectric properties. The most interesting of which is the unusual reduction in thermal conductivity. In the current research, transmission (TEM and scanning (SEM electron microscopy as well as X-ray diffraction methods were applied for investigation of the govern mechanisms resulting in very low thermal conductivity values of an Si-rich HMS composition, following arc melting and hot-pressing procedures. In this paper, it is shown that there is a presence of sub-micron dislocations walls, stacking faults, and silicon and HMS precipitates inside each other apparent in the matrix, following a high temperature (0.9 Tm hot pressing for an hour. These are not just responsible for the low thermal conductivity values observed but also indicate the ability to create complicate nano-structures that will last during the production process and possibly during the application.

Development of Self-Healing Zirconium-Silicide Coatings for Improved Performance Zirconium-Alloy Fuel Cladding

Energy Technology Data Exchange (ETDEWEB)

Sridharan, Kumar [University of Wisconsin-Madison; Mariani, Robert [Idaho National Lab. (INL), Idaho Falls, ID (United States); Bai, Xianming [Idaho National Lab. (INL), Idaho Falls, ID (United States); Xu, Peng [Westinghouse Electric Company; Lahoda, Ed [Westinghouse Electric Company

2018-03-31

Given the long-term goal of developing such coatings for use with nuclear reactor fuel cladding, this work describes results of oxidation and corrosion behavior of bulk zirconium-silicide and fabrication of zirconium-silicide coatings on zirconium-alloy test flats, tube configurations, and SiC test flats. In addition, boiling heat transfer of these modified surfaces (including ZrSi2 coating) during clad quenching experiments is discussed in detail. Oxidation of bulk ZrSi2 was found to be negligible compared to Zircaloy-4 (a common Zr-alloy cladding material) and mechanical integrity of ZrSi2 was superior to that of bulk Zr2Si at high temperatures in ambient air. Very interesting and unique multi-nanolayered composite of ZrO2 and SiO2 were observed. Physical model for the oxidation has been proposed wherein Zr–Si–O mixture undergoes a spinodal phase decomposition into ZrO2 and SiO2, which is manifested as a nanoscale assembly of alternating layer of the two oxides. Steam corrosion at high pressure (10.3 MPa) led to weight loss of ZrSi2 and produced oxide scale with depletion of silicon, possibly attributed to volatile silicon hydroxide, gaseous silicon monoxide, and a solubility of silicon dioxide in water. Only Zircon phase (ZrSiO4) formed during oxidation of ZrSi2 at 1400°C in air, and allowed for immobilization silicon species in oxide scale in the aqueous environments. Zirconium-silicide coatings (on zirconium-alloy substrates) investigated in this study were deposited primarily using magnetron sputter deposition method and slurry method, although powder spray deposition processes cold spray and thermal spray methods were also investigated. The optimized ZrSi2 sputtered coating exhibited a highly protective nature at elevated temperatures in ambient air by mitigating oxygen permeation to the underlying zirconium alloy substrate. The high oxidation resistance of the coating has been shown to be due to nanocrystalline SiO2 and ZrSiO4 phases in the amorphous

Safety analysis of RSG-GAS Silicide core using one line cooling system

International Nuclear Information System (INIS)

Endiah-Puji-Hastuti

2003-01-01

In the frame of minimizing the operation-cost, operation mode using one line cooling system is being evaluated. Maximum reactor has been determined and to continuing this program, steady state and transient analysis were done. The analysis was done by means of a core thermal hydraulic code, COOLOD-N, and PARET. The codes solves core thermal hydraulic equation at steady state conditions and transient, respectively. By using silicide core data and coast down flow rate as the input, thermal hydraulics parameters such as fuel cladding and fuel meat temperatures as well as safety margin against flow instability were calculated. Imposing the safety criteria to the results of steady state and transient analysis, maximum permissible power for this operation was obtained as much as 17.1 MW

X-ray absorption fine structure (XAFS) studies of cobalt silicide thin films

International Nuclear Information System (INIS)

Naftel, S.J.; Coulthard, I.; Hu, Y.; Sham, T.K.; Zinke-Allmang, M.

1998-01-01

Cobalt silicide thin films, prepared on Si(100) wafers, have been studied by X-ray absorption near edge structures (XANES) at the Si K-, L 2,3 - and Co K-edges utilizing both total electron (TEY) and fluorescence yield (FLY) detection as well as extended X-ray absorption fine structure (EXAFS) at the Co K-edge. Samples made using DC sputter deposition on clean Si surfaces and MBE were studied along with a bulk CoSi 2 sample. XANES and EXAFS provide information about the electronic structure and morphology of the films. It was found that the films studied have essentially the same structure as bulk CoSi 2 . Both the spectroscopy and materials characterization aspects of XAFS (X-ray absorption fine structures) are discussed

Separation of hafnium from zirconium in their tetrachloride solution in molten alkali metal chlorides

Energy Technology Data Exchange (ETDEWEB)

Salyulev, A B; Kudyakov, V Ya; Smirnov, M V; Moskalenko, N I [AN SSSR, Sverdlovsk. Inst. Ehlektrokhimii

1984-08-01

The coefficient of HfCl/sub 4/ and ZrCl/sub 4/ separation in the process of vapour sublimation from their solutions in molten NaCl, KCl, CsCl, NaCl-KCl and NaCl-CsCl equimolar mixtures is found to vary in the series from approximately 1.10 to approximately 1.22 and practically not to depend on the temperature (in the 600-910 deg) range and concentration (2-25 mol.% ZrCl/sub 4/+HfCl/sub 4/). HfCl/sub 4/ and ZrCl/sub 4/ are shown to form almost perfect solutions with each other, which in their turn form imperfect solutions with molten alkali metal chlorides, with the strength of hafnium complex chloride anions increasing higher than that of zirconium in the series from NaCl to CsCl.

Separation of hafnium from zirconium in their tetrachloride solution in molten alkali metal chlorides

International Nuclear Information System (INIS)

Salyulev, A.B.; Kudyakov, V.Ya.; Smirnov, M.V.; Moskalenko, N.I.

1984-01-01

The coefficient of HfCl 4 and ZrCl 4 separation in the process of vapour sublimation from their solutions in molten NaCl, KCl, CsCl, NaCl-KCl and NaCl-CsCl equimolar mixtures is found to vary in the series from approximately 1.10 to approximately 1.22 and practically not to depend on the temperature (in the 600-910 deg) range and concentration (2-25 mol.% ZrCl 4 +HfCl 4 ). HfCl 4 and ZrCl 4 are shown to form almost perfect solutions with each other, which in their turn form imperfect solutions with molten alkali metal chlorides, with the strength of hafnium complex chloride anions increasing higher than that of zirconium in the series from NaCl to CsCl

Study of surface segregation of Si on palladium silicide using Auger electron spectroscopy

International Nuclear Information System (INIS)

Abhaya, S; Amarendra, G; Gopalan, Padma; Reddy, G L N; Saroja, S

2004-01-01

The transformation of Pd/Si to Pd 2 Si/Si is studied using Auger electron spectroscopy over a wide temperature range of 370-1020 K. The Pd film gets totally converted to Pd 2 Si upon annealing at 520 K, and beyond 570 K, Si starts segregating on the surface of silicide. It is found that the presence of surface oxygen influences the segregation of Si. The time evolution study of Si segregation reveals that segregation kinetics is very fast and the segregated Si concentration increases as the temperature is increased. Scanning electron microscopy measurements show that Pd 2 Si is formed in the form of islands, which grow as the annealing temperature is increased

Program description for the qualification of CNEA - Argentina as a supplier of LEU silicide fuel and post-irradiation examinations plan for the first prototype irradiated in Argentina

International Nuclear Information System (INIS)

Rugirello, Gabriel; Adelfang, Pablo; Denis, Alicia; Zawerucha, Andres; Marco, Agustin di; Guillaume, Eduardo; Sbaffoni, Monica; Lacoste, Pablo

1998-01-01

In this report we present a description of the ongoing and future stages of the program for the qualification of CNEA, Argentina, as a supplier of low enriched uranium silicide fuel elements for research reactor. Particularly we will focus on the characteristics of the future irradiation experiment on a new detachable prototype, the post-irradiation examinations (PIE) plan for the already irradiated prototype PO4 and an overview of the recently implemented PIE facilities and equipment. The program is divided in several steps, some of which have been already completed. It concludes: development of the uranium silicide fissile material, irradiation and PIE of several full-scale prototypes. Important investments have been already carried out in the facilities for the FE production and PIE. (author)

Silicide formation by Ar/sup +/ ion bombardment of Pd/Si

Energy Technology Data Exchange (ETDEWEB)

Lee, R Y; Whang, C N; Kim, H K; Smith, R J

1988-08-01

Palladium films, 45 nm thick, evaporated on to Si(111) were irradiated to various doses with 78 keV Ar/sup +/ ions to promote silicide formation. Rutherford backscattering spectroscopy (RBS) shows that intermixing has occurred across the Pd/Si interface at room temperature. The mixing behaviour is increased with dose which coincides well with the theoretical model of cascade mixing. The absence of deep RBS tails for palladium and the small area of this for silicon spectra indicate that short-range mixing occurs. From the calculated damage profiles computed with TRIM code, the dominant diffusion species is found to be silicon atoms in the Pd/Si system. It is also found that the initial compound formed by Ar/sup +/ irradiation is Pd/sub 2/Si which increases with dose. At a dose of 1 x 10/sup 16/ Ar/sup +/ cm/sup -2/, a 48 nm thickness of Pd/sub 2/Si was formed by ion-beam mixing at room temperature.

The ability of silicide coating to delay the catastrophic oxidation of vanadium under severe conditions

Energy Technology Data Exchange (ETDEWEB)

Chaia, N., E-mail: nabil.chaia@univ-lorraine.fr [Université de Lorraine, Institut Jean Lamour – UMR7198, Boulevard des Aiguillettes, BP70239, 54506 Vandoeuvre-lès-Nancy Cedex (France); Mathieu, S., E-mail: stephane.mathieu@univ-lorraine.fr [Université de Lorraine, Institut Jean Lamour – UMR7198, Boulevard des Aiguillettes, BP70239, 54506 Vandoeuvre-lès-Nancy Cedex (France); Rouillard, F., E-mail: fabien.rouillard@cea.fr [CEA, DEN, DPC, SCCME, Laboratoire d’Etude de la Corrosion Non Aqueuse, F-91191 Gif-sur-Yvette (France); Vilasi, M., E-mail: michel.vilasi@univ-lorraine.fr [Université de Lorraine, Institut Jean Lamour – UMR7198, Boulevard des Aiguillettes, BP70239, 54506 Vandoeuvre-lès-Nancy Cedex (France)

2015-02-15

Highlights: • Oxidation protection is due to the formation of a pure silica layer. • V–4Cr–4Ti with V{sub x}Si{sub y} silicide coating withstands 400 1-h cycles (1100 °C-T{sub amb}) in air. • Three-point flexure testing at 950 °C and 75 MPa does not induce coating breakdown. • No delamination between coating and substrate is observed in any test. - Abstract: V–4Cr–4Ti vanadium alloy is a potential cladding material for sodium-cooled fast-neutron reactors (SFRs). However, its affinity for oxygen and the subsequent embrittlement that oxygen induces causes a need for an oxygen diffusion barrier, which can be obtained by manufacturing a multi-layered silicide coating. The present work aims to evaluate the effects of thermal cycling (using a cyclic oxidation device) and tensile and compressive stresses (using the three-point flexure test) on the coated alloy system. Tests were performed in air up to 1100 °C, which is 200 °C higher than the accidental temperature for SFR applications. The results showed that the VSi{sub 2} coating was able to protect the vanadium substrate from oxidation for more than 400 1-h cycles between 1100 °C and room temperature. The severe bending applied to the coated alloy at 950 °C using a load of 75 MPa did not lead to specimen breakage. It can be suggested that the VSi{sub 2} coating has mechanical properties compatible with the V–4Cr–4Ti alloy for SFR applications.

Technical report: technical development on the silicide plate-type fuel experiment at nuclear safety research reactor

International Nuclear Information System (INIS)

Yanagisawa, Kazuaki; Soyama, Kazuhiko; Ichikawa, Hiroki

1991-08-01

According to a reduction of fuel enrichment from 45 w/o 235 U to 20 w/o, an aluminide plate-type fuel used currently in the domestic research and material testing reactors will be replaced by a silicide plate-type one. One of the major concern arisen from this alternation is to understand the fuel behavior under simulated reactivity initiated accident (RIA) conditions, this is strongly necessary from the safety and licensing point of view. The in-core RIA experiments are, therefore, carried out at Nuclear Safety Research Reactor (NSRR) in Japan Atomic Energy Research Institute (JAERI). The silicide plate-type fuel consisted of the ternary alloy of U-Al-Si as a meat with uranium density up to 4.8 g/cm 3 having thickness by 0.51 mm and the binary alloy of Al-3%Mg as a cladding by thickness of 0.38 mm. Comparison of the physical properties of this metallic plate fuel with the UO 2 -zircaloy fuel rod used conventionally in commercial light water reactors shows that the heat conductivity of the former is of the order of about 13 times greater than the latter, however the melting temperature is only one-half (1570degC). Prior to in-core RIA experiments, there were some difficulties lay in our technical path. This report summarized the technical achievements obtained through our four years work. (J.P.N.)

Ferromagnetic properties of manganese doped iron silicide

Science.gov (United States)

Ruiz-Reyes, Angel; Fonseca, Luis F.; Sabirianov, Renat

We report the synthesis of high quality Iron silicide (FeSi) nanowires via Chemical Vapor Deposition (CVD). The materials exhibits excellent magnetic response at room temperature, especially when doped with manganese showing values of 2.0 X 10-04 emu for the FexMnySi nanowires. SEM and TEM characterization indicates that the synthesized nanowires have a diameter of approximately 80nm. MFM measurements present a clear description of the magnetic domains when the nanowires are doped with manganese. Electron Diffraction and XRD measurements confirms that the nanowires are single crystal forming a simple cubic structure with space group P213. First-principle calculations were performed on (111) FeSi surface using the Vienna ab initio simulation package (VASP). The exchange correlations were treated under the Ceperley-Alder (CA) local density approximation (LDA). The Brillouin Zone was sampled with 8x8x1 k-point grid. A total magnetic moment of about 10 μB was obtained for three different surface configuration in which the Iron atom nearest to the surface present the higher magnetization. To study the effect of Mn doping, Fe atom was replaced for a Mn. Stronger magnetization is presented when the Mn atom is close to the surface. The exchange coupling constant have been evaluated calculating the energy difference between the ferromagnetic and anti-ferromagnetic configurations.

First-principles investigations of the physical properties of binary uranium silicide alloys

International Nuclear Information System (INIS)

Yang, Jin; Long, Jianping; Yang, Lijun; Li, Dongmei

2013-01-01

Graphical abstract: Total density of states for USi 2 . Display Omitted -- Abstract: The structural, elastic properties and the Debye temperature of binary Uranium Silicide (U-Si) alloys are investigated by using the first-principles plane-wave pseudopotential density function theory within the generalized gradient approximation (GGA). The ground states properties are found to agree with the available experimental data. The mechanical properties like shear modulus, Young’s modulus, Poisson’s ratio σ and ratio B/G are also calculated. Finally, The averaged sound velocity (v m ), the longitudinal sound velocity (v l ), transverse sound velocity (v t ) and the Debye temperature (θ D ) are obtained. However, the theoretical values are slightly different from few existed experiment data because the latter was obtained at room temperature while the former one at 0 K

Density and surface tension of melts of zirconium and hafnium fluorides with lithium fluoride

International Nuclear Information System (INIS)

Katyshev, S.F.; Artemov, V.V.; Desyatnik, V.N.

1988-01-01

A study was conducted to determine the temperature dependence of the density and surface tension of melts of LiF-ZrF 4 and LiF-HfF 4 . Density and surface tension were determined by the method of maximum pressure in an argon bubble. On the basis of experimental data over the entire concentration range the molar volumes and their relative deviations from the additive molar volumes were calculated for 1100 0 K. The positive deviations of the molar volumes from additivity in the LiF-HfF 4 system (22.45%) were greater than in the LiF-ZrF 4 system (15.75%). This indicated that the reaction with lithium fluoride is intensified with the switch to the hafnium fluoride. Results also demonstrated that the fluorides are surface-active components in the molten mixtures

Hydrogen generation systems utilizing sodium silicide and sodium silica gel materials

Science.gov (United States)

Wallace, Andrew P.; Melack, John M.; Lefenfeld, Michael

2015-07-14

Systems, devices, and methods combine reactant materials and aqueous solutions to generate hydrogen. The reactant materials can sodium silicide or sodium silica gel. The hydrogen generation devices are used in fuels cells and other industrial applications. One system combines cooling, pumping, water storage, and other devices to sense and control reactions between reactant materials and aqueous solutions to generate hydrogen. Multiple inlets of varied placement geometries deliver aqueous solution to the reaction. The reactant materials and aqueous solution are churned to control the state of the reaction. The aqueous solution can be recycled and returned to the reaction. One system operates over a range of temperatures and pressures and includes a hydrogen separator, a heat removal mechanism, and state of reaction control devices. The systems, devices, and methods of generating hydrogen provide thermally stable solids, near-instant reaction with the aqueous solutions, and a non-toxic liquid by-product.

Bimetallic low thermal-expansion panels of Co-base and silicide-coated Nb-base alloys for high-temperature structural applications

International Nuclear Information System (INIS)

Rhein, R.K.; Novak, M.D.; Levi, C.G.; Pollock, T.M.

2011-01-01

Research highlights: → Low net thermal expansion bimetallic structural lattice constructed. → Temperatures on the order of 1000 deg. C reached. → Improved silicide coating for niobium alloy developed. - Abstract: The fabrication and high temperature performance of low thermal expansion bimetallic lattices composed of Co-base and Nb-base alloys have been investigated. A 2D sheet lattice with a coefficient of thermal expansion (CTE) lower than the constituent materials of construction was designed for thermal cycling to 1000 deg. C with the use of elastic-plastic finite element analyses. The low CTE lattice consisted of a continuous network of the Nb-base alloy C-103 with inserts of high CTE Co-base alloy Haynes 188. A new coating approach wherein submicron alumina particles were incorporated into (Nb, Cr, Fe) silicide coatings was employed for oxidation protection of the Nb-base alloy. Thermal gravimetric analysis results indicate that the addition of submicron alumina particles reduced the oxidative mass gain by a factor of four during thermal cycling, increasing lifetime. Bimetallic cells with net expansion of 6 x 10 -6 /deg. C and 1 x 10 -6 /deg. C at 1000 deg. C were demonstrated and their measured thermal expansion characteristics were consistent with analytical models and finite element analysis predictions.

Mixing of Al into uranium silicides reactor fuels

International Nuclear Information System (INIS)

Ding, F.R.; Birtcher, R.C.; Kestel, B.J.; Baldo, P.M.

1996-11-01

SEM observations have shown that irradiation induced interaction of the aluminum cladding with uranium silicide reactor fuels strongly affects both fission gas and fuel swelling behaviors during fuel burn-up. The authors have used ion beam mixing, by 1.5 MeV Kr, to study this phenomena. RBS and the 27 Al(p, γ) 28 Si resonance nuclear reaction were used to measure radiation induced mixing of Al into U 3 Si and U 3 Si 2 after irradiation at 300 C. Initially U mixes into the Al layer and Al mixes into the U 3 Si. At a low dose, the Al layer is converted into UAl 4 type compound while near the interface the phase U(Al .93 Si .07 ) 3 grows. Under irradiation, Al diffuses out of the UAl 4 surface layer, and the lower density ternary, which is stable under irradiation, is the final product. Al mixing into U 3 Si 2 is slower than in U 3 Si, but after high dose irradiation the Al concentration extends much farther into the bulk. In both systems Al mixing and diffusion is controlled by phase formation and growth. The Al mixing rates into the two alloys are similar to that of Al into pure uranium where similar aluminide phases are formed

Tribo-electrochemical characterization of hafnium multilayer systems deposited on nitride/vanadium nitride AISI 4140 steel

Science.gov (United States)

Mora, M.; Vera, E.; Aperador, W.

2016-02-01

In this work is presented the synergistic behaviour among corrosion/wear (tribocorrosion) of the multilayer coatings hafnium nitride/vanadium nitride [HfN/VN]n. The multilayers were deposited on AISI 4140 steel using the technique of physical vapor deposition PVD magnetron sputtering, the tests were performed using a pin-on-disk tribometer, which has an adapted potentiostat galvanostat with three-electrode electrochemical cell. Tribocorrosive parameters such as: Friction coefficient between the coating and the counter body (100 Cr6 steel ball); Polarization resistance by means of electrochemical impedance spectroscopy technique and corrosion rate by polarization curves were determined. It was observed an increase in the polarization resistance, a decrease in the corrosion rate and a low coefficient of friction in comparison with the substrate, due to an increase on the number of bilayers.

Tribo-electrochemical characterization of hafnium multilayer systems deposited on nitride/vanadium nitride AISI 4140 steel

International Nuclear Information System (INIS)

Mora, M; Vera, E; Aperador, W

2016-01-01

In this work is presented the synergistic behaviour among corrosion/wear (tribocorrosion) of the multilayer coatings hafnium nitride/vanadium nitride [HfN/VN]n. The multilayers were deposited on AISI 4140 steel using the technique of physical vapor deposition PVD magnetron sputtering, the tests were performed using a pin-on-disk tribometer, which has an adapted potentiostat galvanostat with three-electrode electrochemical cell. Tribocorrosive parameters such as: Friction coefficient between the coating and the counter body (100 Cr6 steel ball); Polarization resistance by means of electrochemical impedance spectroscopy technique and corrosion rate by polarization curves were determined. It was observed an increase in the polarization resistance, a decrease in the corrosion rate and a low coefficient of friction in comparison with the substrate, due to an increase on the number of bilayers. (paper)

Rapid screening of nuclear grade zirconium silicate without separation of hafnium from the bulk matrix

International Nuclear Information System (INIS)

Venkatesh, Manisha; Sharma, P.K.; Avhad, D.K.; Basu, H.; Singhal, R.K.; Reddy, A.V.R.

2014-01-01

Zirconium silicate, also zirconium orthosilicate, (ZrSiO 4 ) is a chemical compound, and occurs in nature as zircon, a silicate mineral. The concentration of Hafnium in nuclear grade Zirconium must be less than 0.2% w/w of Zr. In view of this it must be accurately chemically characterized before issuing a certification for export under non nuclear category. As the chemistry of Zr and Hf is similar, it is difficult to separate Hf by direct wet chemical method. During this work, concentration of Hf in zirconium silicate was measured by Field Portable X-ray Fluorescence (FPXRF) and results obtained were validated by using detailed chemical method. FPXRF spectrometry has become a common analytical technique for on-site screening and fast turnaround analysis of contaminant elements in environmental samples

Hafnium Films and Magnetic Shielding for TIME, A mm-Wavelength Spectrometer Array

Science.gov (United States)

Hunacek, J.; Bock, J.; Bradford, C. M.; Butler, V.; Chang, T.-C.; Cheng, Y.-T.; Cooray, A.; Crites, A.; Frez, C.; Hailey-Dunsheath, S.; Hoscheit, B.; Kim, D. W.; Li, C.-T.; Marrone, D.; Moncelsi, L.; Shirokoff, E.; Steinbach, B.; Sun, G.; Trumper, I.; Turner, A.; Uzgil, B.; Weber, A.; Zemcov, M.

2018-04-01

TIME is a mm-wavelength grating spectrometer array that will map fluctuations of the 157.7-μm emission line of singly ionized carbon ([CII]) during the epoch of reionization (redshift z ˜ 5-9). Sixty transition-edge sensor (TES) bolometers populate the output arc of each of the 32 spectrometers, for a total of 1920 detectors. Each bolometer consists of gold absorber on a ˜ 3 × 3 mm silicon nitride micro-mesh suspended near the corners by 1 × 1 × 500 μm silicon nitride legs targeting a photon-noise-dominated NEP ˜ 1 × 10^{-17} W/√{Hz} . Hafnium films are explored as a lower-T_c alternative to Ti (500 mK) for TIME TESs, allowing thicker support legs for improved yield. Hf T_c is shown to vary between 250 and 450 mK when varying the resident Ar pressure during deposition. Magnetic shielding designs and simulations are presented for the TIME first-stage SQUIDs. Total axial field suppression is predicted to be 5 × 10^7.

Nickel silicide formation in silicon implanted nickel

Science.gov (United States)

Rao, Z.; Williams, J. S.; Pogany, A. P.; Sood, D. K.; Collins, G. A.

1995-04-01

Nickel silicide formation during the annealing of very high dose (≥4.5×1017 ions/cm2) Si implanted Ni has been investigated, using ion beam analytical techniques, electron microscopy, and x-ray diffraction analysis. An initial amorphous Si-Ni alloy, formed as a result of high dose ion implantation, first crystallized to Ni2Si upon annealing in the temperature region of 200-300 °C. This was followed by the formation of Ni5Si2 in the temperature region of 300-400 °C and then by Ni3Si at 400-600 °C. The Ni3Si layer was found to have an epitaxial relationship with the substrate Ni, which was determined as Ni3Si∥Ni and Ni3Si∥Ni for Ni(100) samples. The minimum channeling yield in the 2 MeV He Rutherford backscattering and channeling spectra of this epitaxial layer improved with higher annealing temperatures up to 600 °C, and reached a best value measured at about 8%. However, the epitaxial Ni3Si dissolved after long time annealing at 600 °C or annealing at higher temperatures to liberate soluble Si into the Ni substrate. The epitaxy is attributed to the excellent lattice match between the Ni3Si and the Ni. The annealing behavior follows the predictions of the Ni-Si phase diagram for this nickel-rich binary system.

Irradiation of an uranium silicide prototype in RA-3 reactor

International Nuclear Information System (INIS)

Calabrese, R.; Estrik, G.; Notari, C.

1996-01-01

The factibility of irradiation of an uranium silicide (U 3 Si 2 ) prototype in the RA-3 reactor was studied. The standard RA-3 fuel element uses U 3 O 8 as fissible material. The enrichment of both standard and prototype is the same: 20% U 235 and also the frame geometry and number of plates is identical. The differences are in the plate dimensions and the fissile content which is higher in the prototype. The cooling conditions of the core allow the insertion of the prototype in any core position, even near the water trap, if the overall power is kept below 5Mw. Nevertheless, the recommendation was to begin irradiation near the periphery and later on move the prototype towards more central positions in order to increase the burnup rate. The prototype was effectively introduced in a peripheral position and the thermal fluxes were measured between plates with the foil activation technique. These were also evaluated with the fuel management codes and a reasonable agreement was found. (author). 5 refs., 3 figs., 3 tabs

A spanish mineral of zirconium and hafnium. Separation of the two elements by liquid-liquid extraction, using tributyl phosphate as chelating agent

International Nuclear Information System (INIS)

Ruiz Sanchez, F.; Cruz Castillo, F. de la; Fernandez Cellini, R.

1962-01-01

The zirconium and Hafnium oxides are obtained from a Spanish mineral of zircon with an average contest of 55% in ZrO 2 -HfO 2 . An alkaline fusion to open the mineral, followed by a purification by crystallization as (Zr O-Hf O)Cl 2 H 2 O or as (Zr-Hf) (SO 4 ) 2 . 4H 2 O, is used. A discussion of the best experimental conditions for opening the mineral and of the purification method is made. (Author) 45 refs

Evaluation Of Radioactivity Concentration In The Primary Cooling Water System Of The RSG-GAS During Operation With 30% Silicide Fuels

International Nuclear Information System (INIS)

Hartoyo, Unggul; Udiyani, P.M.; Setiawanto, Anto

2001-01-01

The evaluating radioactivity concentration in the primary cooling water of the RSG-GAS during operation with 30% silicide fuels has been performed. The method of the research is sampling of primary cooling water during operation of the reactor and calculation of its radioactivity concentration. Based on the data obtained from calculation, the identified nuclides in the water are, Mn-56, Sb-124, Sb-122 and Na-24, under the limit of safety value

A study of strain in thin epitaxial films of yttrium silicide on Si(111)

Science.gov (United States)

Siegal, Michelle F.; Martínez-Miranda, L. J.; Santiago-Avilés, J. J.; Graham, W. R.; Siegal, M. P.

1994-02-01

We present the results of an x-ray diffraction analysis of epitaxial yttrium silicide films grown on Si(111), with thicknesses ranging from 14 to 100 Å. The macroscopic strain along the out-of-plane direction for films containing pits or pinholes follows the trend observed previously in films of thicknesses up to 510 Å. The out-of-plane lattice parameter decreases linearly with film thickness. We show preliminary evidence that pinhole-free films do not follow the above trend, and that strain in these films has the opposite sign than in films with pinholes. Finally, our results also indicate that the mode of growth, coupled to the interfacial thermal properties of the films, affects the observed value for the strain in the films.

A study of strain in thin epitaxial films of yttrium silicide on Si(111)

International Nuclear Information System (INIS)

Siegal, M.F.; Martinez-Miranda, L.J.; Santiago-Aviles, J.J.; Graham, W.R.; Siegal, M.P.

1994-01-01

We present the results of an x-ray diffraction analysis of epitaxial yttrium silicide films grown on Si(111), with thicknesses ranging from 14 to 100 A. The macroscopic strain along the out-of-plane direction for films containing pits or pinholes follows the trend observed previously in films of thicknesses up to 510 A. The out-of-plane lattice parameter decreases linearly with film thickness. We show preliminary evidence that pinhole-free films do not follow the above trend, and that strain in these films has the opposite sign than in films with pinholes. Finally, our results also indicate that the mode of growth, coupled to the interfacial thermal properties of the films, affects the observed value for the strain in the films

Construction of a four tip scanning tunneling microscope/scanning electron microscope combination and conductivity measurements of silicide nanowires

International Nuclear Information System (INIS)

Zubkov, Evgeniy

2013-01-01

In this work the combination of a four-tip scanning tunneling microscope with a scanning electron microscope is presented. By means of this apparatus it is possible to perform the conductivity measurements on the in-situ prepared nanostructures in ultra-high vacuum. With the aid of a scanning electron microscope (SEM), it becomes possible to position the tunneling tips of the four-tip scanning tunneling microscope (STM), so that an arrangement for a four-point probe measurement on nanostructures can be obtained. The STM head was built according to the novel coaxial Beetle concept. This concept allows on the one hand, a very compact arrangement of the components of the STM and on the other hand, the new-built STM head has a good mechanical stability, in order to achieve atomic resolution with all four STM units. The atomic resolution of the STM units was confirmed by scanning a Si(111)-7 x 7 surface. The thermal drift during the STM operation, as well as the resonant frequencies of the mechanical structure of the STM head, were determined. The scanning electron microscope allows the precise and safe navigation of the tunneling tips on the sample surface. Multi tip spectroscopy with up to four STM units can be performed synchronously. To demonstrate the capabilities of the new-built apparatus the conductivity measurements were carried out on metallic yttrium silicide nanowires. The nanowires were prepared by the in-situ deposition of yttrium on a heated Si(110) sample surface. Current-voltage curves were recorded on the nanowires and on the wetting layer in-between. The curves indicate an existence of the Schottky barrier between the yttrium silicide nanowires and the silicon bulk. By means of the two-tip measurements with a gate, the insulating property of the Schottky barrier has been confirmed. Using this Schottky barrier, it is possible to limit the current to the nanowire and to prevent it from flowing through the silicon bulk. A four-tip resistance measurement

George de Hevesy (1885-1966). Discoverer of hafnium, founder of radioanalytical chemistry and X-ray fluorescence analysis and father of nuclear medicine

International Nuclear Information System (INIS)

Niese, Siegfried

2017-01-01

George de Hevesy known as discoverer of hafnium, founder of radioanalytical chemistry and X-ray fluorescence analysis and father of nuclear medicine has done important research work in inorganic, physical and radioanalytical and physiological chemistry as well as in geochemistry, radiation biology and medicine. When he must flee for political reasons from a country he must change his colleagues, his equipments, and the topic of his work. It is extremely surprising that he could receive important results under such circumstances even at an advanced age. (author)

Probing the thermal decomposition behaviors of ultrathin HfO2 films by an in situ high temperature scanning tunneling microscope.

Science.gov (United States)

Xue, Kun; Wang, Lei; An, Jin; Xu, Jianbin

2011-05-13

The thermal decomposition of ultrathin HfO(2) films (∼0.6-1.2 nm) on Si by ultrahigh vacuum annealing (25-800 °C) is investigated in situ in real time by scanning tunneling microscopy. Two distinct thickness-dependent decomposition behaviors are observed. When the HfO(2) thickness is ∼ 0.6 nm, no discernible morphological changes are found below ∼ 700 °C. Then an abrupt reaction occurs at 750 °C with crystalline hafnium silicide nanostructures formed instantaneously. However, when the thickness is about 1.2 nm, the decomposition proceeds gradually with the creation and growth of two-dimensional voids at 800 °C. The observed thickness-dependent behavior is closely related to the SiO desorption, which is believed to be the rate-limiting step of the decomposition process.

Silicon-doped hafnium oxide anti-ferroelectric thin films for energy storage

Science.gov (United States)

Ali, Faizan; Liu, Xiaohua; Zhou, Dayu; Yang, Xirui; Xu, Jin; Schenk, Tony; Müller, Johannes; Schroeder, Uwe; Cao, Fei; Dong, Xianlin

2017-10-01

Motivated by the development of ultracompact electronic devices as miniaturized energy autonomous systems, great research efforts have been expended in recent years to develop various types of nano-structural energy storage components. The electrostatic capacitors characterized by high power density are competitive; however, their implementation in practical devices is limited by the low intrinsic energy storage density (ESD) of linear dielectrics like Al2O3. In this work, a detailed experimental investigation of energy storage properties is presented for 10 nm thick silicon-doped hafnium oxide anti-ferroelectric thin films. Owing to high field induced polarization and slim double hysteresis, an extremely large ESD value of 61.2 J/cm3 is achieved at 4.5 MV/cm with a high efficiency of ˜65%. In addition, the ESD and the efficiency exhibit robust thermal stability in 210-400 K temperature range and an excellent endurance up to 109 times of charge/discharge cycling at a very high electric field of 4.0 MV/cm. The superior energy storage performance together with mature technology of integration into 3-D arrays suggests great promise for this recently discovered anti-ferroelectric material to replace the currently adopted Al2O3 in fabrication of nano-structural supercapacitors.

Tuning the magnetic properties of pure hafnium by high pressure torsion

International Nuclear Information System (INIS)

Cepeda-Jiménez, C.M.; Beltrán, J.I.; Hernando, A.; García, M.A.; Ynduráin, F.; Zhilyaev, A.; Pérez-Prado, M.T.

2017-01-01

This work demonstrates that room temperature (RT) ferromagnetism might be triggered in pure hafnium (Hf), a classic paramagnet, by severe plastic deformation (SPD) via high pressure torsion (HPT). The origin of this phenomenon is elucidated by a combined approach including density functional theory (DFT) calculations and transmission electron microscopy (TEM). In particular, it is shown that the elastic lattice distorsions induced in pure Hf as a consequence of grain refinement down to the nanocrystalline regime by HPT lead to the development of a new monoclinic crystalline structure that exhibits a spontaneous magnetization at RT. DFT calculations are utilized to prove that local stretching of the original pure Hf hexagonal close packed (hcp) lattice along specific pyramidal directions, due to the presence of internal stresses in the deformed nanostructure, may give rise to the emergence of the monoclinic phase, which is endowed with a net magnetic moment. An excellent agreement is found between DFT calculations and experimental TEM observations, which provide a first evidence of the presence of the pure Hf monoclinic crystal lattice. This work shows that SPD may constitute a viable, yet widely unexplored, strategy to tune the magnetic properties and, in particular, to induce RT ferromagnetism in bulk non-magnetic metals.

Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Briggs, B.D.; Bishop, S.M. [SUNY College of Nanoscale Science and Engineering, 255 Fuller Road, Albany, NY 12203 (United States); Leedy, K.D. [Air Force Research Laboratory, 2241 Avionics Circle, Wright Patterson Air Force Base, Dayton, OH 45433 (United States); Cady, N.C., E-mail: ncady@albany.edu [SUNY College of Nanoscale Science and Engineering, 255 Fuller Road, Albany, NY 12203 (United States)

2014-07-01

Hafnium oxide-based resistive memory devices have been fabricated on copper bottom electrodes. The HfO{sub x} active layers in these devices were deposited by atomic layer deposition (ALD) at 250 °C with tetrakis(dimethylamido)hafnium(IV) as the metal precursor and an O{sub 2} plasma as the reactant. Depth profiles of the HfO{sub x} by X-ray photoelectron spectroscopy and secondary ion mass spectroscopy revealed a copper concentration on the order of five atomic percent throughout the HfO{sub x} film. In addition to the Cu doped HfO{sub x}, a thin layer (20 nm) of Cu{sub x}O is present at the surface. This surface layer is believed to have formed during the ALD process, and greatly complicates the analysis of the switching mechanism. The resistive memory structures fabricated from the ALD HfO{sub x} exhibited non-polar resistive switching, independent of the top metal electrode (Ni, Pt, Al, Au). Resistive switching current voltage (I–V) curves were analyzed using Schottky emission and ionic hopping models to gain insight into the physical mechanisms underpinning the device behavior. During the forming process it was determined that, at voltages in excess of 2.5 V, an ionic hopping model is in good agreement with the I–V data. The extracted ion hopping distance ∼ 4 Å was within the range of interatomic spacing of HfO{sub 2} during the forming process consistent with ionic motion of Cu{sup 2+} ions. Lastly the on state I–V data was dominated at larger voltages by Schottky emission with an estimated barrier height of ∼ 0.5 eV and a refractive index of 2.59. The consequence of the Schottky emission analysis indicates the on state resistance to be a product of a Pt/Cu{sub 2}O/Cu filament(s)/Cu{sub 2}O/Cu structure. - Highlights: • HfO{sub 2} was grown via atomic layer deposition at 250 and 100 °C on Cu substrates. • A Cu{sub 2}O surface layer and Cu doping were observed in post-deposition of HfO{sub 2}. • Resistive memory devices were fabricated and

Contributions to the preparation of 241americium metal and a few 241americium silicides

International Nuclear Information System (INIS)

Wittmann, F.D.

1980-01-01

In order to take a closer look at the americium-silicon system, three further silicides of americium: Am 5 Si 3 , Am 2 Si 3 and AmSi 2 were prepared in addition to the already known americium monosilicide and starting from the knowledge gained from the latters preparation. Radiographic investigations were carried out into the temperature region of 900 0 C. They showed no change of structure in the three compounds. It was possible to prepare residue-free americium metal by reducing AmF 3 with Si, whereby the SiF 4 formed can be easily separated off as volatile compound, and the Am metal is brought into a very pure form by sublimation suitable for spectrochemical investigations. Attempts to prepare binary germanides and gallides of 241 americium were unsuccessful. (RB) [de

Burn-up analysis of uranium silicide fuels 20% 235U, in the LFR facility

International Nuclear Information System (INIS)

Amor, Ricardo A.; Bouza, Edgardo; Cabrejas, Julian L.; Devida, Claudio A.; Gil, Daniel A.; Stankevicius, Alejandro; Gautier, Eduardo; Garavaglia, Ricardo N.; Lobo, Alfredo

2003-01-01

The LFR Facility is a laboratory designed and constructed with a Hot-Cells line, a Globe-Box and a Fume-Hood, all of them suited to work with radioactive materials such as samples of irradiated silicide MTR fuel elements. A series of dissolutions of this material was performed. From the resulting solutions, two fractions were separated by HPLC. One contained U + Pu, and other the fission product Nd. The concentrations of these elements were obtained by isotopic dilution and mass spectrometry (IDMS). It is concluded that this technique is very powerful and accurate when properly applied, and makes the validation of burn-up calculation codes possible. It is worth remarking the Lfr capacity to carry on different Research and Development (R + D) tasks in the Nuclear Fuel Cycle field. (author)

Thermodynamic and kinetic studies in the systems alkali chloride-zinconium (or hafnium) tetrachloride: Part I. Vapour pressure measurements over hexachloro compounds and use of vapour pressure data in fractional decomposition

International Nuclear Information System (INIS)

Ray, H.S.; Bhat, B.G.; Reddy, G.S.; Biswas, A.K.

1978-01-01

A molten tin isoteniscope has been used to measure the vapour pressures over ZrCl 4 , HfCl 4 and the hexachlore zirconates (M 2 ZrCl 6 ) and the hexachloro hafnates (M 2 HfCl 6 ) of four alkali metals (M = Na,K,Rb,Cs). The method of preparation of these compounds and the effect of small amounts of residual alkali chlorides on the their vapour pressure are discussed. The pressure-temperature plots are examined in the light of some theoretical postulates. A scheme for separation of hafnium from zirconoium by multistage fractional decomposition of the hexachlore compounds of any alkali metal is described. The scheme, which is analogous to rectification in liquid-vapour systems, employs a countercurrent flow of Zr(Hf)Cl 4 in a gas stream and a moving bed of alkali chlorides. The separation is based on the difference in the dissociation equilibrium for zirconium and hafnium compounds. Stage calculations for such a scheme and the main conclusions of a computational work are presented. (author)

Characterization of titanium silicide thin films by X-ray diffraction techniques

International Nuclear Information System (INIS)

Morimoto, N.J.

1987-01-01

This thesis deals with characterization techniques of thin films by means of X-ray diffraction. This includes phase identification and residual stress, microstress and crystallite size calculations. The techniques developed were applied on the study of the titanium silicide formation obtained by means of Rapidy Thermal Processing (RTP) pf Ti films deposited on silicon substratum. The different phases were studied in relation with processing temperature and time in one and two anneling steps. The low resistivity TiSi 2 phase was observed for temperature of 700 0 C and higher. The experimental results indicate that the residual stress of TiSi 2 films doesn't vary significantly with the annealing conditions. On the other hand, the microstress is reduced with annealing time at 800 0 C, while the crystallite size is almost not affected. For the microstress and the crystallite size determination technique, two methods were implemented and compared. The Riella's method appeared to be very efficient, while the Gangulle's method seemed to be inadequate, because the results oscillate too much [pt

In situ atomic-level observation of the formation of platinum silicide at platinum-silicon oxide interfaces under electron irradiation

Directory of Open Access Journals (Sweden)

Takeshi Nagase

2018-05-01

Full Text Available In situ atomic-level observation of the formation of Pt2Si at Pt/SiOx interface by electronic excitation under electron irradiation was performed by using scanning transmission electron microscopy. Scanning of an electron-beam probe stimulates silicide formation at the Pt/SiOx interface; the change in the Pt column corresponding to Pt2Si formation with a crystallographic orientation of (001Pt//(001Pt2Si and [110]Pt//[110]Pt2Si was observed in high-angle annular dark-field images.

Hydrogen generation systems and methods utilizing sodium silicide and sodium silica gel materials

Energy Technology Data Exchange (ETDEWEB)

Wallace, Andrew P.; Melack, John M.; Lefenfeld, Michael

2017-12-19

Systems, devices, and methods combine thermally stable reactant materials and aqueous solutions to generate hydrogen and a non-toxic liquid by-product. The reactant materials can sodium silicide or sodium silica gel. The hydrogen generation devices are used in fuels cells and other industrial applications. One system combines cooling, pumping, water storage, and other devices to sense and control reactions between reactant materials and aqueous solutions to generate hydrogen. Springs and other pressurization mechanisms pressurize and deliver an aqueous solution to the reaction. A check valve and other pressure regulation mechanisms regulate the pressure of the aqueous solution delivered to the reactant fuel material in the reactor based upon characteristics of the pressurization mechanisms and can regulate the pressure of the delivered aqueous solution as a steady decay associated with the pressurization force. The pressure regulation mechanism can also prevent hydrogen gas from deflecting the pressure regulation mechanism.

Metallorganic chemical vapor deposition and atomic layer deposition approaches for the growth of hafnium-based thin films from dialkylamide precursors for advanced CMOS gate stack applications

Science.gov (United States)

Consiglio, Steven P.

To continue the rapid progress of the semiconductor industry as described by Moore's Law, the feasibility of new material systems for front end of the line (FEOL) process technologies needs to be investigated, since the currently employed polysilicon/SiO2-based transistor system is reaching its fundamental scaling limits. Revolutionary breakthroughs in complementary-metal-oxide-semiconductor (CMOS) technology were recently announced by Intel Corporation and International Business Machines Corporation (IBM), with both organizations revealing significant progress in the implementation of hafnium-based high-k dielectrics along with metal gates. This announcement was heralded by Gordon Moore as "...the biggest change in transistor technology since the introduction of polysilicon gate MOS transistors in the late 1960s." Accordingly, the study described herein focuses on the growth of Hf-based dielectrics and Hf-based metal gates using chemical vapor-based deposition methods, specifically metallorganic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD). A family of Hf source complexes that has received much attention recently due to their desirable properties for implementation in wafer scale manufacturing is the Hf dialkylamide precursors. These precursors are room temperature liquids and possess sufficient volatility and desirable decomposition characteristics for both MOCVD and ALD processing. Another benefit of using these sources is the existence of chemically compatible Si dialkylamide sources as co-precursors for use in Hf silicate growth. The first part of this study investigates properties of MOCVD-deposited HfO2 and HfSixOy using dimethylamido Hf and Si precursor sources using a customized MOCVD reactor. The second part of this study involves a study of wet and dry surface pre-treatments for ALD growth of HfO2 using tetrakis(ethylmethylamido)hafnium in a wafer scale manufacturing environment. The third part of this study is an investigation of

Recoil Induced Room Temperature Stable Frenkel Pairs in a-Hafnium Upon Thermal Neutron Capture

Science.gov (United States)

Butz, Tilman; Das, Satyendra K.; Dey, Chandi C.; Ghoshal, Shamik

2013-11-01

Ultrapure hafnium metal (110 ppm zirconium) was neutron activated with a thermal neutron flux of 6:6 · 1012 cm-2s-1 in order to obtain 181Hf for subsequent time differential perturbed angular correlation (TDPAC) experiments using the nuclear probe 181Hf(β-) 181Ta. Apart from the expected nuclear quadrupole interaction (NQI) signal for a hexagonal close-packed (hcp) metal, three further discrete NQIs were observed with a few percent fraction each. The TDPAC spectra were recorded for up to 11 half lives with extreme statistical accuracy. The fitted parameters vary slightly within the temperature range between 248 K and 373 K. The signals corresponding to the three additional sites completely disappear after `annealing' at 453 K for one minute. Based on the symmetry of the additional NQIs and their temperature dependencies, they are tentatively attributed to Frenkel pairs produced by recoil due to the emission of a prompt 5:694 MeV -ray following thermal neutron capture and reported by the nuclear probe in three different positions. These Frenkel pairs are stable up to at least 373 K.

The energy landscape of glassy dynamics on the amorphous hafnium diboride surface

Science.gov (United States)

Nguyen, Duc; Mallek, Justin; Cloud, Andrew N.; Abelson, John R.; Girolami, Gregory S.; Lyding, Joseph; Gruebele, Martin

2014-11-01

Direct visualization of the dynamics of structural glasses and amorphous solids on the sub-nanometer scale provides rich information unavailable from bulk or conventional single molecule techniques. We study the surface of hafnium diboride, a conductive ultrahigh temperature ceramic material that can be grown in amorphous films. Our scanning tunneling movies have a second-to-hour dynamic range and single-point current measurements extend that to the millisecond-to-minute time scale. On the a-HfB2 glass surface, two-state hopping of 1-2 nm diameter cooperatively rearranging regions or "clusters" occurs from sub-milliseconds to hours. We characterize individual clusters in detail through high-resolution (single cluster vertical displacements, we can reconstruct the local free energy landscape of individual clusters, complete with activation barrier height, a reaction coordinate in nanometers, and the shape of the free energy landscape basins between which hopping occurs. The experimental images are consistent with the compact shape of α-relaxors predicted by random first order transition theory, whereas the rapid hopping rate, even taking less confined motion at the surface into account, is consistent with β-relaxations. We make a proposal of how "mixed" features can show up in surface dynamics of glasses.

About the structure and stability of complex carbonates of thorium (IV), cerium (IV), zirconium (IV), hafnium (IV)

International Nuclear Information System (INIS)

Dervin, Jacqueline

1972-01-01

This research thesis addressed the study of complex carbonates of cations of metals belonging to the IV A column, i.e. thorium (IV), zirconium (IV), hafnium (IV), and also cerium (IV) and uranium (VI), and more particularly focused on ionic compounds formed in solution, and also on the influence of concentration and nature of cations on stability and nature of the formed solid. The author first presents methods used in this study, discusses their precision and scope of validity. She reports the study of the formation of different complex ions which have been highlighted in solution, and the determination of their formation constants. She reports the preparation and study of the stability domain of solid complexes. The next part reports the use of thermogravimetric analysis, IR spectrometry, and crystallography for the structural study of these compounds

The whole-core LEU silicide fuel demonstration in the JMTR

Energy Technology Data Exchange (ETDEWEB)

Aso, Tomokazu; Akashi, Kazutomo; Nagao, Yoshiharu [Japan Atomic Energy Research Institute, Ibaraki-ken (Japan)] [and others

1997-08-01

The JMTR was fully converted to LEU silicide (U{sub 3}Si{sub 2}) fuel with cadmium wires as burnable absorber in January, 1994. The reduced enrichment program for the JMTR was initiated in 1979, and the conversion to MEU (enrichment ; 45%) aluminide fuel was carried out in 1986 as the first step of the program. The final goal of the program was terminated by the present LEU conversion. This paper describes the results of core physics measurement through the conversion phase from MEU fuel core to LEU fuel core. Measured excess reactivities of the LEU fuel cores are mostly in good agreement with predicted values. Reactivity effect and burnup of cadmium wires, therefore, were proved to be well predicted. Control rod worth in the LEU fuel core is mostly less than that in the MEU fuel core. Shutdown margin was verified to be within the safety limit. There is no significant difference in temperature coefficient of reactivity between the MEU and LEU fuel cores. These results verified that the JMTR was successfully and safely converted to LEU fuel. Extension of the operating cycle period was achieved and reduction of spend fuel elements is expected by using the fuel with high uranium density.

Irradiation behavior of uranium-silicide dispersion fuels

International Nuclear Information System (INIS)

Hofman, G.L.; Neimark, L.A.

1984-01-01

This paper describes and analyzes the irradiation behavior of experimental fuel plates containing U 3 Si, U 3 Si-1.5 w/o Al, and U 3 Si 2 particulate fuel dispersed and clad in aluminum. The fuel is nominally 19.9%-enriched 235 U and the fuel volume fraction in the central ''meat'' section of the plates is approximately 33%. Sets of fuel plates were removed from the Oak Ridge Research reactor at burnup levels of 35, 83, and 94% 235 U depletion and examined at the Alpha-Gamma Hot-Cell Facility at Argonne National Laboratory. The results of the examination may be summarized as follows. The dimensional stability of the U 3 Si 2 and pure U 3 Si fuel was excellent throughout the entire burnup range, with uniform plate thickness increases up to a maximum of 4 mils at the highest burnup level (94% 235 U depletion). This corresponds to a meat volume increase of 11%. The swelling was partially due to solid fission products but to a larger extent to fission gas bubbles. The fission gas bubbles in U 3 Si 2 were small (submicrometer size) and very uniformly distributed, indicating great stability. To a large extent this was also the case for U 3 Si; however, larger bubbles ( 3 Si-1.5 w/o Al fuel became unstable at the higher burnup levels. Fission gas bubbles were larger than in the other two fuels and were present throughout the fuel particles. At 94% 235 U depletion, the formation of fission gas bubbles with diameters up to 20 mils caused the plates to pillow. It is proposed that aluminum in U 3 Si destabilizes fission gas bubble formation to the point of severe breakaway swelling in the prealloyed silicide fuel. (author)

Neutron irradiated uranium silicides studied by neutron diffraction and Rietveld analysis

International Nuclear Information System (INIS)

Birtcher, R.C.; Mueller, M.H.; Richardson, J.W. Jr.; Faber, J. Jr.

1989-11-01

Uranium silicides have been considered for use as reactor fuels in both high power and low enrichment applications. However, U 3 Si was found to become amorphous under irradiation and to become mechanically unstable to rapid growth by plastic flow. U 2 Si 2 appears to be stable against amorphization at low displacement rates, but the extent of this stability is uncertain. Although the mechanisms responsible for plastic flow in U 3 Si and other amorphous systems are unknown, as is the importance of crystal structure for amorphization, it may not be surprising that these materials amorphize, in light of the fact that many radioactive nuclide - containing minerals are known to metaminctize (lose crystallinity) under irradiation. The present experiment follows the detailed changes in the crystal structures of U 3 Si and U 3 Si 2 introduced by neutron bombardment and subsequent uranium fission at room temperature. U-Si seems the ideal system for a neutron diffraction investigation since the crystallographic and amorphous forms can be studied simultaneously by combining conventional Rietveld refinement of the crystallographic phases with Fourier-filtering of the non-crystalline scattering component

Prompt Neutron Decay Constant Determination Of Silicide Transition Core Using Noise Method

International Nuclear Information System (INIS)

Jujuratisbela, Uju; Yulianto, Yusi Eko; Cahyana

2001-01-01

Chairman of BATAN had decided to replace the Oxide fuel element type of RSG-GAS into silicide element type step by step. The replacement will create core transitions. Kinetic characteristic of the transition cores have to be monitored in order to know the deviation of core behavior. For that reason, the kinetic parameters have to be measured. Prompt neutron decay constant (alpha) is one of the kinetic parameters that has to be monitored continuously in the transition cores. In order not to disturb the normal operation of reactor, alpha parameter should be measured by using noise analysis method. The voltage of neutron flux at power of 15 MW is connected to preamplifier and filter then to the Dynamic Signal Analyzer Version-2 and then the auto power spectral density (APSD) was determined by using Fast Fourier transform. From the APSD curve of each channel of JKT03, the cut off frequency of each channel can be determined by using linear regression technique such that the prompt neutron decay constant can be estimated

A search for long-lived radionuclides produced by fast-neutron irradiations of copper, silver, europium, terbium, and hafnium

International Nuclear Information System (INIS)

Meadows, J.W.; Smith, D.L.; Ikeda, Y.; Konno, C.

1990-01-01

Identical sample packets, each containing samples of elemental copper, silver, europium, terbium, and hafnium, as well as titanium, iron and nickel as dosimeters, have been irradiated in three distinct accelerator neutron fields (at Argonne National Laboratory and Los Alamos National Laboratory in the U.S.A., and Japan Atomic Energy Research Institute, Tokai, Japan) as part of an interlaboratory research collaboration to search for the production of long-lived radionuclides for fusion waste disposal applications. This paper is a progress report on this project. To date, we have detected the following activities, and have obtained preliminary experimental cross section values for several of these: Ag-106m,108m,110m; Eu-150m,152g,154; Tb-158,160; and Hf-175,178m2,179m2,181. (author). 11 refs, 1 fig., 4 tabs

Ferroelectric transistors with monolayer molybdenum disulfide and ultra-thin aluminum-doped hafnium oxide

Science.gov (United States)

Yap, Wui Chung; Jiang, Hao; Liu, Jialun; Xia, Qiangfei; Zhu, Wenjuan

2017-07-01

In this letter, we demonstrate ferroelectric memory devices with monolayer molybdenum disulfide (MoS2) as the channel material and aluminum (Al)-doped hafnium oxide (HfO2) as the ferroelectric gate dielectric. Metal-ferroelectric-metal capacitors with 16 nm thick Al-doped HfO2 are fabricated, and a remnant polarization of 3 μC/cm2 under a program/erase voltage of 5 V is observed. The capability of potential 10 years data retention was estimated using extrapolation of the experimental data. Ferroelectric transistors based on embedded ferroelectric HfO2 and MoS2 grown by chemical vapor deposition are fabricated. Clockwise hysteresis is observed at low program/erase voltages due to slow bulk traps located near the 2D/dielectric interface, while counterclockwise hysteresis is observed at high program/erase voltages due to ferroelectric polarization. In addition, the endurances of the devices are tested, and the effects associated with ferroelectric materials, such as the wake-up effect and polarization fatigue, are observed. Reliable writing/reading in MoS2/Al-doped HfO2 ferroelectric transistors over 2 × 104 cycles is achieved. This research can potentially lead to advances of two-dimensional (2D) materials in low-power logic and memory applications.

Simulated Fission Gas Behavior in Silicide Fuel at LWR Conditions

Energy Technology Data Exchange (ETDEWEB)

Miao, Yinbin [Argonne National Lab. (ANL), Argonne, IL (United States); Mo, Kun [Argonne National Lab. (ANL), Argonne, IL (United States); Yacout, Abdellatif [Argonne National Lab. (ANL), Argonne, IL (United States); Harp, Jason [Argonne National Lab. (ANL), Argonne, IL (United States)

2016-09-15

As a promising candidate for the accident tolerant fuel (ATF) used in light water reactors (LWRs), the fuel performance of uranium silicide (U₃Si₂) at LWR conditions needs to be well-understood. However, existing experimental post-irradiation examination (PIE) data are limited to the research reactor conditions, which involve lower fuel temperature compared to LWR conditions. This lack of appropriate experimental data significantly affects the development of fuel performance codes that can precisely predict the microstructure evolution and property degradation at LWR conditions, and therefore evaluate the qualification of U₃Si₂ as an AFT for LWRs. Considering the high cost, long timescale, and restrictive access of the in-pile irradiation experiments, this study aims to utilize ion irradiation to simulate the inpile behavior of the U₃Si₂ fuel. Both in situ TEM ion irradiation and ex situ high-energy ATLAS ion irradiation experiments were employed to simulate different types of microstructure modifications in U₃Si₂. Multiple PIE techniques were used or will be used to quantitatively analyze the microstructure evolution induced by ion irradiation so as to provide valuable reference for the development of fuel performance code prior to the availability of the in-pile irradiation data.

Status of core conversion with LEU silicide fuel in JRR-4

Energy Technology Data Exchange (ETDEWEB)

Nakajima, Teruo; Ohnishi, Nobuaki; Shirai, Eiji [Japan Atomic Energy Research Institute, Ibaraki-ken (Japan)

1997-08-01

Japan Research Reactor No.4 (JRR-4) is a light water moderated and cooled, 93% enriched uranium ETR-type fuel used and swimming pool type reactor with thermal output of 3.5MW. Since the first criticality was achieved on January 28, 1965, JRR-4 has been used for shielding experiments, radioisotope production, neutron activation analyses, training for reactor engineers and so on for about 30 years. Within the framework of the RERTR Program, the works for conversion to LEU fuel are now under way, and neutronic and thermal-hydraulic calculations emphasizing on safety and performance aspects are being carried out. The design and evaluation for the core conversion are based on the Guides for Safety Design and Evaluation of research and testing reactor facilities in Japan. These results show that the JRR-4 will be able to convert to use LEU fuel without any major design change of core and size of fuel element. LEU silicide fuel (19.75%) will be used and maximum neutron flux in irradiation hole would be slightly decreased from present neutron flux value of 7x10{sup 13}(n/cm{sup 2}/s). The conversion works are scheduled to complete in 1998, including with upgrade of the reactor building and utilization facilities.

Status of core conversion with LEU silicide fuel in JRR-4

International Nuclear Information System (INIS)

Nakajima, Teruo; Ohnishi, Nobuaki; Shirai, Eiji

1997-01-01

Japan Research Reactor No.4 (JRR-4) is a light water moderated and cooled, 93% enriched uranium ETR-type fuel used and swimming pool type reactor with thermal output of 3.5MW. Since the first criticality was achieved on January 28, 1965, JRR-4 has been used for shielding experiments, radioisotope production, neutron activation analyses, training for reactor engineers and so on for about 30 years. Within the framework of the RERTR Program, the works for conversion to LEU fuel are now under way, and neutronic and thermal-hydraulic calculations emphasizing on safety and performance aspects are being carried out. The design and evaluation for the core conversion are based on the Guides for Safety Design and Evaluation of research and testing reactor facilities in Japan. These results show that the JRR-4 will be able to convert to use LEU fuel without any major design change of core and size of fuel element. LEU silicide fuel (19.75%) will be used and maximum neutron flux in irradiation hole would be slightly decreased from present neutron flux value of 7x10 13 (n/cm 2 /s). The conversion works are scheduled to complete in 1998, including with upgrade of the reactor building and utilization facilities

Oxidation behavior of niobium aluminide intermetallics protected by aluminide and silicide diffusion coatings

International Nuclear Information System (INIS)

Li, Y.; Soboyejo, W.; Rapp, R.A.

1999-01-01

The isothermal and cyclic oxidation behavior of a new class of damage-tolerant niobium aluminide (Nb 3 Al-xTi-yCr) intermetallics is studied between 650 C and 850 C. Protective diffusion coatings were deposited by pack cementation to achieve the siliciding or aluminizing of substrates with or without intervening Mo or Ni layers, respectively. The compositions and microstructures of the resulting coatings and oxidized surfaces were characterized. The isothermal and cyclic oxidation kinetics indicate that uncoated Nb-40Ti-15Al-based intermetallics may be used up to ∼750 C. Alloying with Cr improves the isothermal oxidation resistance between 650 C and 850 C. The most significant improvement in oxidation resistance is achieved by the aluminization of electroplated Ni interlayers. The results suggest that the high-temperature limit of niobium aluminide-based alloys may be increased to 800 C to 850 C by aluminide-based diffusion coatings on ductile Ni interlayers. Indentation fracture experiments also indicate that the ductile nickel interlayers are resistant to crack propagation in multilayered aluminide-based coatings

FY 1997 report on the improvement of toughness of silicide system intermetallic compounds by complex texture; 1997 nendo chosa hokokusho (fukugo soshikika ni yoru silicide kei kinzokukan kagobutsu no kyojinsei kaizen)

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-03-01

In order to develop new materials superior in both room- temperature ductility and high-temperature strength, the basic data on MoSi2 intermetallic compounds with complex texture were stored. Intermetallic compound is one of the promising candidates of new super heat-resistant materials superior to conventional super heat-resistant alloys, however, it is extremely poor in ductility at room temperature. Based on available information on isothermal sectional phase diagrams of ternary system (Mo-Si-X system) composed of Mo silicide and the third element (X), some alloy systems were selected in consideration of use of carbide and nitride stably existing as dispersed phase of deposits at high temperature. A knowledge on phase diagrams of ternary system specimens with various compositions was obtained through arc melting, X-ray diffraction and texture observation, and heat treatment conditions for obtaining target complex textures were also determined. Storage of the basic data suggested that improvement of the ductility is possible by forming fine texture through addition of the third element and teat treatment. 21 refs., 58 figs., 15 tabs.

Development of new ORIGEN2 data library sets for research reactors with light water cooled oxide and silicide LEU (20 w/o) fuels based on JENDL-3.3 nuclear data

International Nuclear Information System (INIS)

Liem, Peng Hong; Sembiring, Tagor Malem

2013-01-01

Highlights: • We developed new ORIGEN2 data library sets for research reactors based on JENDL-3.3. • The sets cover oxide and silicide LEU fuels with meat density up to 4.74 g U/cm 3 . • Two kinds of data library sets are available: fuel region and non-fuel regions. • We verified the new data library sets with other codes. • We validated the new data library against a non-destructive test. -- Abstract: New sets of ORIGEN2 data library dedicated to research/testing reactors with light water cooled oxide and silicide LEU fuel plates based on JENDL-3.3 nuclear data were developed, verified and validated. The new sets are considered to be an extension of the most recent release of ORIGEN2.2UPJ code, i.e. the ORLIBJ33 library sets. The newly generated ORIGEN2 data library sets cover both oxide and silicide LEU fuels with fuel meat density range from 2.96 to 4.74 g U/cm 3 used in the present and future operation of the Indonesian 30 MWth RSG GAS research reactor. The new sets are expected applicable also for other research/testing reactors which utilize similar fuels or have similar neutron spectral indices. In addition to the traditional ORIGEN2 library sets for fuel depletion analyses in fuel regions, in the new data library sets, new ORIGEN2 library sets for irradiation/activation analyses were also prepared which cover all representative non-fuel regions of RSG GAS such as reflector elements, irradiation facilities, etc. whose neutron spectra are significantly softer than fuel regions. Verification with other codes as well as validation with a non-destructive test result showed promising results where a good agreement was confirmed

Radiation Re-solution Calculation in Uranium-Silicide Fuels

International Nuclear Information System (INIS)

Matthews, Christopher; Andersson, Anders David Ragnar; Unal, Cetin

2017-01-01

The release of fission gas from nuclear fuels is of primary concern for safe operation of nuclear power plants. Although the production of fission gas atoms can be easily calculated from the fission rate in the fuel and the average yield of fission gas, the actual diffusion, behavior, and ultimate escape of fission gas from nuclear fuel depends on many other variables. As fission gas diffuses through the fuel grain, it tends to collect into intra-granular bubbles, as portrayed in Figure 1.1. These bubbles continue to grow due to absorption of single gas atoms. Simultaneously, passing fission fragments can cause collisions in the bubble that result in gas atoms being knocked back into the grain. This so called ''re-solution'' event results in a transient equilibrium of single gas atoms within the grain. As single gas atoms progress through the grain, they will eventually collect along grain boundaries, creating inter-granular bubbles. As the inter-granular bubbles grow over time, they will interconnect with other grain-face bubbles until a pathway is created to the outside of the fuel surface, at which point the highly pressurized inter-granular bubbles will expel their contents into the fuel plenum. This last process is the primary cause of fission gas release. From the simple description above, it is clear there are several parameters that ultimately affect fission gas release, including the diffusivity of single gas atoms, the absorption and knockout rate of single gas atoms in intra-granular bubbles, and the growth and interlinkage of intergranular bubbles. Of these, the knockout, or re-solution rate has an particularly important role in determining the transient concentration of single gas atoms in the grain. The re-solution rate will be explored in the following sections with regards to uranium-silicide fuels in order to support future models of fission gas bubble behavior.

The Comparison Of Silicon Analysis For The Uranium Silicide Fuel Using Spectrophotometrical And Gravimetrical Methods

International Nuclear Information System (INIS)

Putro, P. K.; Suripto, A.; Putra, S.; Gunanjar

1996-01-01

The analysis of silicon content in the uranium silicide fuel spectro-photometrical and gravimetrical method have been performed. The nitrous oxide-acetylene was used in the atomic absorption spectrophotometry (AAS) on the wave length of 251.6 nm, and the mixture of ammonium hepta molybdate complexes and SnC1 2 as reductor were applied during analysis by UV-VIS spectrophotometry (UV-VIS) on the wave length of 757.5 mm. The reagent of HCLO 4 and HNO 3 were used for determining Si content by gravimetrical methods. The results of this comparison is as follows: the accuracy result is around 96.37 % + 0.24 % for the Si concentration up to 300 ppm (the AAS), is 138.60 % = 0.43 % for the Si concentration range between 0.1-1.5 ppm (UV-VIS), and is 51.13 % + 0.8 % for 1 gram of Si (gravimetry). The results also show that the lowest analytical error is obtained by AAS method

Analysis of gamma dose for 4,8 gU/cm3 density silicide core at the RSG-GAS reactor using MCNP code

International Nuclear Information System (INIS)

Ardani

2011-01-01

Radiation safety analysis should be done following of substitution of fuel density of 2.96 gU/cc to density of 4,8 gU/cc silicide fuels for the RSG-GAS reactor. MCNP-5 code has been used to perform gamma dose calculation of the RSG-GAS reactor. Gamma radiation source at reactor consists of capture gamma rays, prompt fission gamma rays, and gamma rays of decay of fission and activation products. The strength of the prompt fission gamma rays is obtained by gamma releases of fission process of U-235 and reactor power of 30 MWt., during 46,6 days operation. Radiation dose is calculated at the experimental hall by detection point at the surface of outer of biological shielding and the operation hall by detection point at the top of the pool. The calculation is conducted at reactor on the normal operation and on the worst postulated accident causing the water level at the pool decreases. Calculation result shows that the biggest source strength of gamma rays come from the decay process. The highest calculated dose at the experiment hall is 4,07x10 -3 μSv/h, far from the maximum external dose permitted 25 μSv/h. The highest calculated dose at the operation hall is 19.98 μSv/h. Even though the calculated dose is still acceptable but this is close to the maximum permitted dose for worker. It concluded that loading of 4,8 gU/cc silicide fuel for the RSG-GAS still safe. (author)

IER-297 CED-2: Final Design for Thermal/Epithermal eXperiments with Jemima Plates with Polyethylene and Hafnium

Energy Technology Data Exchange (ETDEWEB)

Nelson, A. J. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Percher, C. M. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Zywiec, W. J. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Heinrichs, D. P. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

2018-01-11

This report presents the final design (CED-2) for IER-297, and focuses on 15 critical configurations using highly enriched uranium (HEU) Jemima plates moderated by polyethylene with and without hafnium diluent. The goal of the U.S. Nuclear Criticality Safety Program’s Thermal/Epithermal eXperiments (TEX) is to design and conduct new critical experiments to address high priority nuclear data needs from the nuclear criticality safety and nuclear data communities, with special emphasis on intermediate energy (0.625 eV – 100 keV) assemblies that can be easily modified to include various high priority diluent materials. The TEX (IER 184) CED-1 Report [1], completed in 2012, demonstrated the feasibility of meeting the TEX goals with two existing NCSP fissile assets, plutonium Zero Power Physics Reactor (ZPPR) plates and highly enriched uranium (HEU) Jemima plates. The first set of TEX experiments will focus on using the plutonium ZPPR plates with polyethylene moderator and tantalum diluents.

Large-format platinum silicide microwave kinetic inductance detectors for optical to near-IR astronomy.

Science.gov (United States)

Szypryt, P; Meeker, S R; Coiffard, G; Fruitwala, N; Bumble, B; Ulbricht, G; Walter, A B; Daal, M; Bockstiegel, C; Collura, G; Zobrist, N; Lipartito, I; Mazin, B A

2017-10-16

We have fabricated and characterized 10,000 and 20,440 pixel Microwave Kinetic Inductance Detector (MKID) arrays for the Dark-speckle Near-IR Energy-resolved Superconducting Spectrophotometer (DARKNESS) and the MKID Exoplanet Camera (MEC). These instruments are designed to sit behind adaptive optics systems with the goal of directly imaging exoplanets in a 800-1400 nm band. Previous large optical and near-IR MKID arrays were fabricated using substoichiometric titanium nitride (TiN) on a silicon substrate. These arrays, however, suffered from severe non-uniformities in the TiN critical temperature, causing resonances to shift away from their designed values and lowering usable detector yield. We have begun fabricating DARKNESS and MEC arrays using platinum silicide (PtSi) on sapphire instead of TiN. Not only do these arrays have much higher uniformity than the TiN arrays, resulting in higher pixel yields, they have demonstrated better spectral resolution than TiN MKIDs of similar design. PtSi MKIDs also do not display the hot pixel effects seen when illuminating TiN on silicon MKIDs with photons with wavelengths shorter than 1 µm.

Analysis Of Temperature Effects On Reactivity Of The Rsg-Gas Core Using Silicide Fuels

International Nuclear Information System (INIS)

Surbakti, Tukiran; Pinem, Surian

2001-01-01

RSG-GAS has been operating using new silicide fuels so that it is necessary to estimate and to measure the effect of temperature on reactivity of the core. The parameters to be determined due to temperature effect are reactivity coefficient of moderator temperature, temperature coefficient of fuel element and power reactivity coefficient. By doing a couple compensation method, determination of reactivity coefficient as well as the reactivity coefficient of moderator temperature can be obtained. Furthermore, coefficient of the reactivity was successfully estimated using the combination of WIMS-D4 and Batan-2DIFF. The cell calculation was done by using WIMS-D4 code to get macroscopic cross section and Batan-2DIFF code is used for core calculation. The calculation and experimental results of reactivity coefficient do not show any deviation from RSG-GAS safety margin. The results are -2,84 sen/ o C, -1,29 sen/MW and -0,64 sen/ o C for reactivity coefficients of temperature, power, fuel element and moderator temperature, respectively. All of 3 parameters are absolutely met with safety criteria

Reactivity management and burn-up management on JRR-3 silicide-fuel-core

International Nuclear Information System (INIS)

Kato, Tomoaki; Araki, Masaaki; Izumo, Hironobu; Kinase, Masami; Torii, Yoshiya; Murayama, Yoji

2007-08-01

On the conversion from uranium-aluminum-dispersion-type fuel (aluminide fuel) to uranium-silicon-aluminum-dispersion-type fuel (silicide fuel), uranium density was increased from 2.2 to 4.8 g/cm 3 with keeping uranium-235 enrichment of 20%. So, burnable absorbers (cadmium wire) were introduced for decreasing excess reactivity caused by the increasing of uranium density. The burnable absorbers influence reactivity during reactor operation. So, the burning of the burnable absorbers was studied and the influence on reactor operation was made cleared. Furthermore, necessary excess reactivity on beginning of operation cycle and the time limit for restart after unplanned reactor shutdown was calculated. On the conversion, limit of fuel burn-up was increased from 50% to 60%. And the fuel exchange procedure was changed from the six-batch dispersion procedure to the fuel burn-up management procedure. The previous estimation of fuel burn-up was required for the planning of fuel exchange, so that the estimation was carried out by means of past operation data. Finally, a new fuel exchange procedure was proposed for effective use of fuel elements. On the procedure, burn-up of spent fuel was defined for each loading position. The average length of fuel's staying in the core can be increased by two percent on the procedure. (author)

Improved DC performance of AlGaN/GaN high electron mobility transistors using hafnium oxide for surface passivation

International Nuclear Information System (INIS)

Liu, Chang; Chor, Eng Fong; Tan, Leng Seow

2007-01-01

Improved DC performance of AlGaN/GaN high electron mobility transistors (HEMTs) have been demonstrated using reactive-sputtered hafnium oxide (HfO 2 ) thin film as the surface passivation layer. Hall data indicate a significant increase in the product of sheet carrier concentration (n s ) and electron mobility (μ n ) in the HfO 2 -passivated HEMTs, compared to the unpassivated HEMTs. This improvement in electron carrier characteristics gives rise to a 22% higher I Dmax and an 18% higher g mmax in HEMTs with HfO 2 passivation relative to the unpassivated devices. On the other hand, I gleak of the HEMTs decreases by nearly one order of magnitude when HfO 2 passivation is applied. In addition, drain current is measured in the subthreshold regime. Compared to the unpassivated HEMTs, HfO 2 -passivated HEMTs exhibit a much smaller off-state I D , indicating better turn-off characteristics

Protective coatings of hafnium dioxide by atomic layer deposition for microelectromechanical systems applications

Energy Technology Data Exchange (ETDEWEB)

Berdova, Maria, E-mail: maria.berdova@aalto.fi [Aalto University, Department of Materials Science and Engineering, 02150, Espoo (Finland); Wiemer, Claudia; Lamperti, Alessio; Tallarida, Grazia; Cianci, Elena [Laboratorio MDM, IMM CNR, Via C. Olivetti 2, 20864, Agrate Brianza, MB (Italy); Lamagna, Luca; Losa, Stefano; Rossini, Silvia; Somaschini, Roberto; Gioveni, Salvatore [STMicroelectronics, Via C. Olivetti 2, 20864, Agrate Brianza, MB (Italy); Fanciulli, Marco [Laboratorio MDM, IMM CNR, Via C. Olivetti 2, 20864, Agrate Brianza, MB (Italy); Università degli studi di Milano Bicocca, Dipartimento di Scienza dei Materiali, 20126, Milano (Italy); Franssila, Sami, E-mail: sami.franssila@aalto.fi [Aalto University, Department of Materials Science and Engineering, 02150, Espoo (Finland)

2016-04-15

Graphical abstract: - Highlights: • Atomic layer deposition of HfO{sub 2} from (CpMe){sub 2}Hf(OMe)Me or Hf(NMeEt){sub 4} and ozone for potential applications in microelectromechanical systems. • ALD HfO{sub 2} protects aluminum substrates from degradation in moist environment and at the same time retains good reflectance properties of the underlying material. • The resistance of hafnium dioxide to moist environment is independent of chosen precursors. - Abstract: This work presents the investigation of HfO{sub 2} deposited by atomic layer deposition (ALD) from either HfD-CO4 or TEMAHf and ozone for microelectromechanical systems (MEMS) applications, in particular, for environmental protection of aluminum micromirrors. This work shows that HfO{sub 2} films successfully protect aluminum in moist environment and at the same time retain good reflectance properties of underlying material. In our experimental work, the chemical composition, crystal structure, electronic density and roughness of HfO{sub 2} films remained the same after one week of humidity treatment (relative humidity of 85%, 85 °C). The reflectance properties underwent only minor changes. The observed shift in reflectance was only from 80–90% to 76–85% in 400–800 nm spectral range when coated with ALD HfO{sub 2} films grown with Hf(NMeEt){sub 4} and no shift (remained in the range of 68–83%) for films grown from (CpMe){sub 2}Hf(OMe)Me.

Efficient UV-emitting X-ray phosphors: octahedral Zr(PO4)6 luminescence centers in potassium hafnium-zirconium phosphates K2Hf1-xZrx(PO4)2 and KHf2(1-x)Zr2x(PO4)3

International Nuclear Information System (INIS)

Torardi, C.C.; Miao, C.R.; Li, J.

2003-01-01

Potassium hafnium-zirconium phosphates, K 2 Hf 1-x Zr x (PO 4 ) 2 and KHf 2(1-x) Zr 2x (PO 4 ) 3 , are broad-band UV-emitting phosphors. At room temperature, they have emission peak maxima at approximately 322 and 305 nm, respectively, under 30 kV peak molybdenum X-ray excitation. Both phosphors demonstrate luminescence efficiencies that make them up to ∼60% as bright as commercially available CaWO 4 Hi-Plus. The solid-state and flux synthesis conditions, and X-ray excited UV luminescence of these two phosphors are discussed. Even though the two compounds have different atomic structures, they contain zirconium in the same active luminescence environment as that found in highly efficient UV-emitting BaHf 1-x Zr x (PO 4 ) 2 . All the three materials have hafnium and zirconium in octahedral coordination via oxygen-atom corner sharing with six separate PO 4 tetrahedra. This octahedral Zr(PO 4 ) 6 moiety appears to be an important structural element for efficient X-ray excited luminescence, as are the edge-sharing octahedral TaO 6 chains for tantalate emission

Electronic structure and bonding in the ternary silicide YNiSi3

International Nuclear Information System (INIS)

Sung, Gi Hong; Kang, Dae Bok

2003-01-01

An analysis of the electronic structure and bonding in the ternary silicide YNiSi 3 is made, using extended Hueckel tight-binding calculations. The YNiSi 3 structure consists of Ni-capped Si 2 dimer layers and Si zigzag chains. Significant bonding interactions are present between the silicon atoms in the structure. The oxidation state formalism of (Y 3+ )(Ni 0 )(Si 3 ) 3- for YNiSi 3 constitutes a good starting point to describe its electronic structure. Si atoms receive electrons form the most electropositive Y in YNiSi 3 , and Ni 3d and Si 3p states dominate below the Fermi level. There is an interesting electron balance between the two Si and Ni sublattices. Since the π orbitals in the Si chain and the Ni d and s block levels are almost completely occupied, the charge balance for YNiSi 3 can be rewritten as (Y 3+ )(Ni 2- )(Si 2- )(Si-Si) + , making the Si 2 layers oxidized. These results suggest that the Si zigzag chain contains single bonds and the Si 2 double layer possesses single bonds within a dimer with a partial double bond character. Stronger Si-Si and Ni-Si bonding interactions are important for giving stability to the structure, while essentially no metal-metal bonding exists at all. The 2D metallic behavior of this compound is due to the Si-Si interaction leading to dispersion of the several Si 2 π bands crossing the Fermi level in the plane perpendicular to the crystallographic b axis

Rate Theory Modeling and Simulation of Silicide Fuel at LWR Conditions

Energy Technology Data Exchange (ETDEWEB)

Miao, Yinbin [Argonne National Lab. (ANL), Argonne, IL (United States). Nuclear Engineering Division; Ye, Bei [Argonne National Lab. (ANL), Argonne, IL (United States). Nuclear Engineering Division; Hofman, Gerard [Argonne National Lab. (ANL), Argonne, IL (United States). Nuclear Engineering Division; Yacout, Abdellatif [Argonne National Lab. (ANL), Argonne, IL (United States). Nuclear Engineering Division; Gamble, Kyle [Idaho National Lab. (INL), Idaho Falls, ID (United States). Fuel Modeling and Simulation; Mei, Zhi-Gang [Argonne National Lab. (ANL), Argonne, IL (United States). Nuclear Engineering Division

2016-08-29

As a promising candidate for the accident tolerant fuel (ATF) used in light water reactors (LWRs), the fuel performance of uranium silicide (U₃Si₂) at LWR conditions needs to be well understood. In this report, rate theory model was developed based on existing experimental data and density functional theory (DFT) calculations so as to predict the fission gas behavior in U₃Si₂ at LWR conditions. The fission gas behavior of U₃Si₂ can be divided into three temperature regimes. During steady-state operation, the majority of the fission gas stays in intragranular bubbles, whereas the dominance of intergranular bubbles and fission gas release only occurs beyond 1000 K. The steady-state rate theory model was also used as reference to establish a gaseous swelling correlation of U₃Si₂ for the BISON code. Meanwhile, the overpressurized bubble model was also developed so that the fission gas behavior at LOCA can be simulated. LOCA simulation showed that intragranular bubbles are still dominant after a 70 second LOCA, resulting in a controllable gaseous swelling. The fission gas behavior of U₃Si₂ at LWR conditions is benign according to the rate theory prediction at both steady-state and LOCA conditions, which provides important references to the qualification of U₃Si₂ as a LWR fuel material with excellent fuel performance and enhanced accident tolerance.

BASIC program to compute uranium density and void volume fraction in laboratory-scale uranium silicide aluminum dispersion plate-type fuel

International Nuclear Information System (INIS)

Ugajin, Mitsuhiro

1991-05-01

BASIC program simple and easy to operate has been developed to compute uranium density and void volume fraction for laboratory-scale uranium silicide aluminum dispersion plate-type fuel, so called miniplate. An example of the result of calculation is given in order to demonstrate how the calculated void fraction correlates with the microstructural distribution of the void in a miniplate prepared in our laboratory. The program is also able to constitute data base on important parameters for miniplates from experimentally-determined values of density, weight of each constituent and dimensions of miniplates. Utility programs pertinent to the development of the BASIC program are also given which run in the popular MS-DOS environment. All the source lists are attached and brief description for each program is made. (author)

Recovery of metal chlorides from their complexes by molten salt displacement

International Nuclear Information System (INIS)

McLaughlin, D.F.; Stoltz, R.A.

1989-01-01

This patent describes a process for recovering zirconium or hafnium chloride from a complex of zirconium or hafnium tetrachloride and phosphorus oxychloride. The process comprising: introducing liquid complex of zirconium or hafnium tetrachloride and phosphorus oxychloride into an upper portion of a feed column containing zirconium or hafnium tetrachloride vapor and phosphorus oxychloride vapor. The liquid complex absorbing zirconium or hafnium tetrachloride vapor and producing a bottoms liquid and also producing a phosphorus oxychloride vapor stripped of zirconium or hafnium tetrachloride; introducing the bottoms liquid into a molten salt containing displacement reactor, the reactor containing molten salt comprising at least 30 mole percent lithium chloride and at least 30 mole percent of at least one other alkali metal chloride, the reactor being heated to 30-450 0 C to displace phosphorus oxychloride from the complex and product zirconium or hafnium tetrachloride vapor and phosphorus oxychloride vapor and zirconium or hafnium tetrachloride-containing molten salt; introducing the zirconium or hafnium tetrachloride vapor and the phosphorus oxychloride vapor into the feed column below the point of introduction of the liquid stream; introducing the zirconium or hafnium tetrachloride containing-molten salt into a recovery vessel where zirconium or hafnium tetrachloride is removed from the molten salt to produce zirconium or hafnium tetrachloride product and zirconium or hafnium chloride-depleted molten salt; and recycling the zirconium or hafnium tetachloride-depleted molten salt to the displacement reactor

Experimental studies of thermal and chemical interactions between oxide and silicide nuclear fuels with water

Energy Technology Data Exchange (ETDEWEB)

farahani, A.A.; Corradini, M.L. [Univ. of Wisconsi, Madison, WI (United States)

1995-09-01

Given some transient power/cooling mismatch is a nuclear reactor and its inability to establish the necessary core cooling, energetic fuel-coolant interactions (FCI`s commonly called `vapor explosions`) could occur as a result of the core melting and coolant contact. Although a large number of studies have been done on energetic FCI`s, very few experiments have been performed with the actual fuel materials postulated to be produced in severe accidents. Because of the scarcity of well-characterized FCI data for uranium allows in noncommercial reactors (cermet and silicide fuels), we have conducted a series of experiments to provide a data base for the foregoing materials. An existing 1-D shock-tube facility was modified to handle depleted radioactive materials (U{sub 3}O{sub 8}-Al, and U{sub 3}Si{sub 2}-Al). Our objectives have been to determine the effects of the initial fuel composition and temperature and the driving pressure (triggering) on the explosion work output, dynamic pressures, transient temperatures, and the hydrogen production. Experimental results indicate limited energetics, mainly thermal interactions, for these fuel materials as compared to aluminum where more chemical reactions occur between the molten aluminum and water.

Ternary silicides ScIr{sub 4}Si{sub 2} and RERh{sub 4}Si{sub 2} (RE = Sc, Y, Tb-Lu) and quaternary derivatives RERh{sub 4}Si{sub 2-x}Sn{sub x} (RE = Y, Nd, Sm, Gd-Lu) - structure, chemical bonding, and solid state NMR spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Vosswinkel, Daniel; Benndorf, Christopher; Poettgen, Rainer [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie; Eckert, Hellmut [Muenster Univ. (Germany). Inst. fuer Physikalische Chemie; Sao Paulo Univ., Sao Carlos (Brazil). Inst. of Physics; Matar, Samir F. [Bordeaux Univ., CNRS, ICMCB, UPR 9048, Pessac (France)

2016-11-01

The silicides ScIr{sub 4}Si{sub 2} and RERh{sub 4}Si{sub 2} (RE = Sc, Y, Tb-Lu) and silicide stannides RERh{sub 4}Si{sub 2-x}Sn{sub x}(RE = Y, Nd, Sm, Gd-Lu) were synthesized from the elements by arc-melting and subsequent annealing. The new compounds crystallize with the orthorhombic YRh{sub 4}Ge{sub 2} type structure, space group Pnma. They were characterized by X-ray powder patterns and several structures were refined from single crystal X-ray diffractometer data. The main structural motifs of this series of silicides are tricapped trigonal prisms formed by the transition metal and rare earth atoms. One of the two crystallographically independent silicon sites allows for formation of solid solutions with tin, exemplarily studied for ErRh{sub 4}Si{sub 2-x}Sn{sub x}. Electronic structure calculations reveal strong covalent Rh-Si bonding as the main stability factor. Multinuclear ({sup 29}Si, {sup 45}Sc, and {sup 89}Y) magic-angle spinning (MAS) NMR spectra of the structure representatives with diamagnetic rare-earth elements (Sc, Y, Lu) are found to be consistent with the crystallographic data and specifically confirm the selective substitution of Sn in the Si2 sites in the quaternary compounds YRh{sub 4}SiSn and LuRh{sub 4}SiSn.

A comparison of the metallurgical behaviour of dispersion fuels with uranium silicides and U6Fe as dispersants

International Nuclear Information System (INIS)

Nazare, S.

1984-01-01

In the past few years metallurgical studies have been carried out to develop fuel dispersions with U-densities up to 7.0 Mg U m -3 . Uranium silicides have been considered to be the prime candidates as dispersants; U 6 Fe being a potential alternative on account of its higher U-density. The objective of this paper is to compare the metallurgical behaviour of these two material combinations with regard to the following aspects: (1) preparation of the compounds U 3 Si, U 3 Si 2 and U 6 Fe; (2) powder metallurgical processing to miniature fuel element plates; (3) reaction behaviour under equilibrium conditions in the relevant portions of the ternary U-Si-Al and U-Fe-Al systems; (4) dimensional stability of the fuel plates after prolonged thermal treatment; (5) thermochemical behaviour of fuel plates at temperatures near the melting point of the cladding. Based on this data, the possible advantages of each fuel combination are discussed. (author)

Synthesis, Characterization, and Mechanism of Formation of Janus-Like Nanoparticles of Tantalum Silicide-Silicon (TaSi2/Si

Directory of Open Access Journals (Sweden)

Andrey V. Nomoev

2014-12-01

Full Text Available Metal-semiconductor Janus-like nanoparticles with the composition tantalum silicide-silicon (TaSi2/Si were synthesized for the first time by means of an evaporation method utilizing a high-power electron beam. The composition of the synthesized particles were characterized using high-resolution transmission electron microscopy (HRTEM, X-ray diffraction (XRD, selective area electron diffraction (SAED, and energy dispersive X-ray fluorescence (EDX analysis. The system is compared to previously synthesized core-shell type particles in order to show possible differences responsible for the Janus-like structure forming instead of a core-shell architecture. It is proposed that the production of Janus-like as opposed to core-shell or monophase particles occurs due to the ability of Ta and Si to form compounds and the relative content of Ta and Si atoms in the produced vapour. Based on the results, a potential mechanism of formation for the TaSi2/Si nanoparticles is discussed.

Growth of HfO{sub x} thin films by reactive molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany)

2008-07-01

Thin films of hafnium oxide were grown on single crystal r-cut and c-cut sapphire by reactive molecular beam epitaxy. The conditions for the growth of single oriented hafnium oxide thin films have been established. Hafnium oxide thin films were characterized by X-ray diffraction and optical absorption measurements. It was found that hafnium oxide thin films grown on r-cut sapphire were (00l) oriented whereas, on c-cut sapphire, hafnium oxide films showed different orientations depending on the growth temperature and oxidation conditions. The hafnium oxide films grown at higher temperature and under strong oxidation conditions yielded (001) oriented films on c-cut sapphire whereas slightly weaker oxidation condition leads to (111) oriented hafnium oxide films. The bandgap deducted from optical absorption measurement carried out on hafnium oxide films grown under optimized conditions agreed well with the values reported in literature. A range of oxygen deficient thin films of hafnium oxide were also grown on single crystal sapphire substrates in order to investigate the effect of oxygen vacancies on dielectric properties of hafnium oxide. The oxygen deficient thin films of hafnium oxide show a decrease in bandgap with increase in oxygen deficiency.

Evaluation and Enhancement of the Oxygen Reduction Reaction Activity on Hafnium Oxide Nanoparticles Assisted by L(+)-lysine

International Nuclear Information System (INIS)

Chisaka, Mitsuharu; Itagaki, Noriaki

2016-01-01

Evaluation of the oxygen reduction reaction (ORR) on oxide compounds is difficult owing to the insulating nature of oxides. In this study, various amounts of L(+)-lysine were added to the precursor dispersion for the hydrothermal synthesis of hafnium oxide nanoparticles on reduced graphene oxide sheets (HfO_x–rGO) to coat the HfO_x catalysts with layers of carbon, thereby increasing the conductivity and number of active sites. When the mass ratio of L(+)-lysine to GO, R, was above 26, carbon layers were formed and the amount monotonically increased with increasing R, as noted by cyclic voltammogrametry. X-ray photoelectron spectroscopy and rotating disk electrode analyses revealed that pyrolysis produced ORR-active oxygen defects, whose formation was proposed to involve carbothermal reduction. When 53 ≤ R ≤ 210, HfO_x–rGO contained a similar amount of oxygen defects and ORR activity, as represented by an onset potential of 0.9 V versus the reversible hydrogen electrode in 0.1 mol dm"−"3 H_2SO_4. However, the number of active sites depended on R due to the amount of L(+)-lysine-derived carbon layers that increased both the number of active sites and resistivity towards oxygen diffusion.

Mechanistic Studies of Hafnium-Pyridyl Amido-Catalyzed 1-Octene Polymerization and Chain Transfer Using Quench-Labeling Methods.

Science.gov (United States)

Cueny, Eric S; Johnson, Heather C; Anding, Bernie J; Landis, Clark R

2017-08-30

Chromophore quench-labeling applied to 1-octene polymerization as catalyzed by hafnium-pyridyl amido precursors enables quantification of the amount of active catalyst and observation of the molecular weight distribution (MWD) of Hf-bound polymers via UV-GPC analysis. Comparison of the UV-detected MWD with the MWD of the "bulk" (all polymers, from RI-GPC analysis) provides important mechanistic information. The time evolution of the dual-detection GPC data, concentration of active catalyst, and monomer consumption suggests optimal activation conditions for the Hf pre-catalyst in the presence of the activator [Ph 3 C][B(C 6 F 5 ) 4 ]. The chromophore quench-labeling agents do not react with the chain-transfer agent ZnEt 2 under the reaction conditions. Thus, Hf-bound polymeryls are selectively labeled in the presence of zinc-polymeryls. Quench-labeling studies in the presence of ZnEt 2 reveal that ZnEt 2 does not influence the rate of propagation at the Hf center, and chain transfer of Hf-bound polymers to ZnEt 2 is fast and quasi-irreversible. The quench-label techniques represent a means to study commercial polymerization catalysts that operate with high efficiency at low catalyst concentrations without the need for specialized equipment.

Characteristics of laser produced plasmas of hafnium and tantalum in the 1-7 nm region

Science.gov (United States)

Li, Bowen; Otsuka, Takamitsu; Sokell, Emma; Dunne, Padraig; O'Sullivan, Gerry; Hara, Hiroyuki; Arai, Goki; Tamura, Toshiki; Ono, Yuichi; Dinh, Thanh-Hung; Higashiguchi, Takeshi

2017-11-01

Soft X-ray (SXR) spectra from hafnium and tantalum laser produced plasmas were recorded in the 1-7 nm region using two Nd:YAG lasers with pulse lengths of 170 ps and 10 ns, respectively, operating at a range of power densities. The maximum focused peak power density was 2. 3 × 1014 W cm-2 for 170 ps pulses and 1. 8 × 1012 W cm-2 for 10 ns pulses, respectively. Two intense quasicontinuous intensity bands resulting from n = 4 - n = 4 and n = 4 - n = 5 unresolved transition arrays (UTAs) dominate both sets of experimental spectra. Comparison with calculations performed with the Cowan suite of atomic structure codes as well as consideration of previous experimental and theoretical results aided identification of the most prominent features in the spectra. For the 10 ns spectrum, the highest ion stage that could be identified from the n = 4 - n = 5 arrays were lower than silver-like Hf25+ and Ta26+ (which has a 4 d 104 f ground configuration) indicating that the plasma temperature attained was too low to produce ions with an outermost 4 d subshell, while for the 170 ps plasmas the presence of significantly higher stages was deduced and lines due to 4 d-5 p transitions were clearly evident. Furthermore, we show an enhancement of emission from tantalum using dual laser irradiation, and the effect of pre-pulse durations and delay times between two pulses are demonstrated.

Construction of a four tip scanning tunneling microscope/scanning electron microscope combination and conductivity measurements of silicide nanowires; Aufbau einer Vierspitzen-Rastertunnelmikroskop/Rasterelektronenmikroskop-Kombination und Leitfaehigkeitsmessungen an Silizid Nanodraehten

Energy Technology Data Exchange (ETDEWEB)

Zubkov, Evgeniy

2013-09-01

In this work the combination of a four-tip scanning tunneling microscope with a scanning electron microscope is presented. By means of this apparatus it is possible to perform the conductivity measurements on the in-situ prepared nanostructures in ultra-high vacuum. With the aid of a scanning electron microscope (SEM), it becomes possible to position the tunneling tips of the four-tip scanning tunneling microscope (STM), so that an arrangement for a four-point probe measurement on nanostructures can be obtained. The STM head was built according to the novel coaxial Beetle concept. This concept allows on the one hand, a very compact arrangement of the components of the STM and on the other hand, the new-built STM head has a good mechanical stability, in order to achieve atomic resolution with all four STM units. The atomic resolution of the STM units was confirmed by scanning a Si(111)-7 x 7 surface. The thermal drift during the STM operation, as well as the resonant frequencies of the mechanical structure of the STM head, were determined. The scanning electron microscope allows the precise and safe navigation of the tunneling tips on the sample surface. Multi tip spectroscopy with up to four STM units can be performed synchronously. To demonstrate the capabilities of the new-built apparatus the conductivity measurements were carried out on metallic yttrium silicide nanowires. The nanowires were prepared by the in-situ deposition of yttrium on a heated Si(110) sample surface. Current-voltage curves were recorded on the nanowires and on the wetting layer in-between. The curves indicate an existence of the Schottky barrier between the yttrium silicide nanowires and the silicon bulk. By means of the two-tip measurements with a gate, the insulating property of the Schottky barrier has been confirmed. Using this Schottky barrier, it is possible to limit the current to the nanowire and to prevent it from flowing through the silicon bulk. A four-tip resistance measurement

Development of silicide coating over molybdenum based refractory alloy and its characterization

International Nuclear Information System (INIS)

Chakraborty, S.P.; Banerjee, S.; Sharma, I.G.; Suri, A.K.

2010-01-01

Molybdenum based refractory alloys are potential candidate materials for structural applications in high temperature compact nuclear reactors and fusion reactors. However, these alloys being highly susceptible to oxidation in air or oxygen at elevated temperature, undergoes severe losses from highly volatile molybdenum trioxide species. Present investigation, therefore, examines the feasibility of development of silicide type of coating over molybdenum base TZM alloy shape (Mo > 99 wt.%) using pack cementation coating technique. TZM alloy was synthesized in this laboratory from oxide intermediates of MoO 2 , TiO 2 and ZrO 2 in presence of requisite amount of carbon, by alumino-thermic reduction smelting technique. The arc melted and homogenized samples of TZM alloy substrate was then embedded in the chosen and intimately mixed pack composition consisting of inert matrix (Al 2 O 3 ), coating powder (Si) and activator (NH 4 Cl) taken in the judicious proportion. The sealed charge packs contained in an alumina crucible were heated at temperatures of 1000 o C for 8-16 h heating cycle to develop the coating. The coating phase was confirmed to be of made of MoSi 2 by XRD analysis. The morphology of the coating was studied by SEM characterization. It had revealed that the coating was diffusion bonded where Si from coating diffused inward and Mo from TZM substrate diffused outward to form the coating. The coating was found to be resistant to oxidation when tested in air up to 1200 o C. A maximum 100 μm of coating thickness was achieved on each side of the substrate.

Neutronic Analysis of the RSG-GAS Compact Core without CIP Silicide 3.55 g U/cc and 4.8 g U/cc

International Nuclear Information System (INIS)

Jati S; Lily S; Tukiran S

2004-01-01

Fuel conversion from U 3 O 8 -Al to U 3 Si 2 -Al 2.96 g U/cc density in the RSG-GAS core had done successfully step by step since 36 th core until 44 th core. So that, since the 45 th core until now (48 th core) had been using full of silicide 2.96 g U/cc. Even though utilization program of silicide fuel with high density (3.55 g U/cc and 4.8 g U/cc) and optimize operation of RSG-GAS core under research. Optimalitation of core with increasing operation cycle have been analyzing about compact core. The mean of compact core is the RSG-GAS core with decrease number of IP or CIP position irradiation. In this research, the neutronic calculation to cover RSG-GAS core and RSG-GAS core without CIP that are using U 3 Si 2 -Al 2.96 g U/cc, 3.55 g U/cc and 4.8 g U/cc had done. Two core calculation done at 15 MW power using SRAC-ASMBURN code. The calculation result show that fuel conversion from 2.96 g U/cc density to 3.55 g U/cc and 4.8 g U/cc will increasing cycle length for both RSG-GAS core and RSG-GAS compact core without CIP. However, increasing of excess reactivity exceeded from nominal value of first design that 9.2%. Change of power peaking factor is not show significant value and still less than 1.4. Core fuelled with U 3 Si 2 -Al 4.8 g U/cc density have maximum discharge burn-up which exceeded from licensing value (70%). RSG-GAS compact core without CIP fuelled U 3 Si 2 -Al 2.96 g U/cc have longer cycle operation then RSG-GAS core and fulfil limitation neutronic parameter at the first design value. (author)

Materials properties of hafnium and zirconium silicates: Metal interdiffusion and dopant penetration studies

Science.gov (United States)

Quevedo Lopez, Manuel Angel

Hafnium and Zirconium based gate dielectrics are considered potential candidates to replace SiO2 or SiON as the gate dielectric in CMOS processing. Furthermore, the addition of nitrogen into this pseudo-binary alloy has been shown to improve their thermal stability, electrical properties, and reduce dopant penetration. Because CMOS processing requires high temperature anneals (up to 1050°C), it is important to understand the diffusion properties of any metal associated with the gate dielectric in silicon at these temperatures. In addition, dopant penetration from the doped polysilicon gate into the Si channel at these temperatures must also be studied. Impurity outdiffusion (Hf, Zr) from the dielectric, or dopant (B, As, P) penetration through the dielectric into the channel region would likely result in deleterious effects upon the carrier mobility. In this dissertation extensive thermal stability studies of alternate gate dielectric candidates ZrSixOy and HfSixO y are presented. Dopant penetration studies from doped-polysilicon through HfSixOy and HfSixOyNz are also presented. Rutherford Backscattering Spectroscopy (RBS), Heavy Ion RBS (HI-RBS), X-ray Photoelectron Spectroscopy (XPS), High Resolution Transmission Electron Microscopy (HR-TEM), and Time of Flight and Dynamic Secondary Ion Mass Spectroscopy (ToF-SIMS, D-SIMS) methods were used to characterize these materials. The dopant diffusivity is calculated by modeling of the dopant profiles in the Si substrate. In this disseration is reported that Hf silicate films are more stable than Zr silicate films, from the metal interdiffusion point of view. On the other hand, dopant (B, As, and P) penetration is observed for HfSixO y films. However, the addition of nitrogen to the Hf - Si - O systems improves the dopant penetration properties of the resulting HfSi xOyNz films.

Lifetime embrittlement of reactor core materials

International Nuclear Information System (INIS)

Kreyns, P.H..; Bourgeois, W.F.; Charpentier, P.L.; Kammenzind, B.F.; Franklin, D.G.; White, C.J.

1994-08-01

Over a core lifetime, the reactor materials Zircaloy-2, Zircaloy-4, and hafnium may become embrittled due to the absorption of corrosion- generated hydrogen and to neutron irradiation damage. Results are presented on the effects of fast fluence on the fracture toughness of wrought Zircaloy-2, Zircaloy-4, and hafnium; Zircaloy-4 to hafnium butt welds; and hydrogen precharged beta treated and weld metal Zircaloy-4 for fluences up to a maximum of approximately 150 x 10 24 n/M 2 (> 1 Mev). While Zircaloy-4 did not exhibit a decrement in K IC due to irradiation, hafnium and butt welds between hafnium and Zircaloy-4 are susceptible to embrittlement with irradiation. The embrittlement can be attributed to irradiation strengthening, which promotes cleavage fracture in hafnium and hafnium-Zircaloy welds, and, in part, to the lower chemical potential of hydrogen in Zircaloy-4 compared to hafnium, which causes hydrogen, over time, to drift from the hafnium end toward the Zircaloy-4 end and to precipitate at the interface between the weld and base-metal interface. Neutron radiation apparently affects the fracture toughness of Zircaloy-2, Zircaloy-4, and hafnium in different ways. Possible explanations for these differences are suggested. It was found that Zircaloy-4 is preferred over Zircaloy-2 in hafnium-to- Zircaloy butt-weld applications due to its absence of a radiation- induced reduction in K IC plus its lower hydrogen absorption characteristics compared with Zircaloy-2

The energy landscape of glassy dynamics on the amorphous hafnium diboride surface

International Nuclear Information System (INIS)

Nguyen, Duc; Girolami, Gregory S.; Mallek, Justin; Cloud, Andrew N.; Abelson, John R.; Lyding, Joseph; Gruebele, Martin

2014-01-01

Direct visualization of the dynamics of structural glasses and amorphous solids on the sub-nanometer scale provides rich information unavailable from bulk or conventional single molecule techniques. We study the surface of hafnium diboride, a conductive ultrahigh temperature ceramic material that can be grown in amorphous films. Our scanning tunneling movies have a second-to-hour dynamic range and single-point current measurements extend that to the millisecond-to-minute time scale. On the a-HfB 2 glass surface, two-state hopping of 1–2 nm diameter cooperatively rearranging regions or “clusters” occurs from sub-milliseconds to hours. We characterize individual clusters in detail through high-resolution (<0.5 nm) imaging, scanning tunneling spectroscopy and voltage modulation, ruling out individual atoms, diffusing adsorbates, or pinned charges as the origin of the observed two-state hopping. Smaller clusters are more likely to hop, larger ones are more likely to be immobile. HfB 2 has a very high bulk glass transition temperature T g , and we observe no three-state hopping or sequential two-state hopping previously seen on lower T g glass surfaces. The electronic density of states of clusters does not change when they hop up or down, allowing us to calibrate an accurate relative z-axis scale. By directly measuring and histogramming single cluster vertical displacements, we can reconstruct the local free energy landscape of individual clusters, complete with activation barrier height, a reaction coordinate in nanometers, and the shape of the free energy landscape basins between which hopping occurs. The experimental images are consistent with the compact shape of α-relaxors predicted by random first order transition theory, whereas the rapid hopping rate, even taking less confined motion at the surface into account, is consistent with β-relaxations. We make a proposal of how “mixed” features can show up in surface dynamics of glasses

Microstructure Evolution and Durability of Advanced Environmental Barrier Coating Systems for SiC/SiC Ceramic Matrix Composites

Science.gov (United States)

Zhu, Dongming; Evans, Laura J.; McCue, Terry R.; Harder, Bryan

2016-01-01

Environmental barrier coated SiC-SiC ceramic matrix composites (CMCs) systems will play a crucial role in next generation turbine engines for hot-section component applications because of their ability to significantly increase engine operating temperatures with improved efficiency, reduce engine weight and cooling requirements. Advanced HfO2 and rare earth silicate environmental barrier coatings (EBCs), along with multicomponent hafnium and rare earth silicide EBC bond coats have been developed. The coating degradation mechanisms in the laboratory simulated engine thermal cycling, and fatigue-creep operating environments are also being investigated. This paper will focus on the microstructural and compositional evolutions of an advanced environmental barrier coating system on a SiC-SiC CMC substrate during the high temperature simulated durability tests, by using a Field Emission Gun Scanning Electron Microscopy, Energy Dispersive Spectroscopy (EDS) and Wavelength Dispersive Spectroscopy (WDS). The effects of Calcium-Magnesium-Alumino-Silicate (CMAS) from road sand or volcano-ash deposits on the degradation mechanisms of the environmental barrier coating systems will also be discussed. The detailed analysis results help understand the EBC-CMC system performance, aiming at the durability improvements to achieve more robust, prime-reliant environmental barrier coatings.

Charge plasma based source/drain engineered Schottky Barrier MOSFET: Ambipolar suppression and improvement of the RF performance

Science.gov (United States)

Kale, Sumit; Kondekar, Pravin N.

2018-01-01

This paper reports a novel device structure for charge plasma based Schottky Barrier (SB) MOSFET on ultrathin SOI to suppress the ambipolar leakage current and improvement of the radio frequency (RF) performance. In the proposed device, we employ dual material for the source and drain formation. Therefore, source/drain is divided into two parts as main source/drain and source/drain extension. Erbium silicide (ErSi1.7) is used as main source/drain material and Hafnium metal is used as source/drain extension material. The source extension induces the electron plasma in the ultrathin SOI body resulting reduction of SB width at the source side. Similarly, drain extension also induces the electron plasma at the drain side. This significantly increases the SB width due to increased depletion at the drain end. As a result, the ambipolar leakage current can be suppressed. In addition, drain extension also reduces the parasitic capacitances of the proposed device to improve the RF performance. The optimization of length and work function of metal used in the drain extension is performed to achieve improvement in device performance. Moreover, the proposed device makes fabrication simpler, requires low thermal budget and free from random dopant fluctuations.

An Auger electron spectroscopy study on the anodization process of high-quality thin-film capacitors made of hafnium

International Nuclear Information System (INIS)

Noya, Atsushi; Sasaki, Katsutaka; Umezawa, Toshiji

1989-01-01

Formation process of the anodic oxide film of hafnium for use as a thin-film capacitor has been examined by the current-voltage characteristics of the anodization and the in-depth analysis of formed oxide using Auger electron spectroscopy. It is found that the oxide growth obeys three different rate laws such as the linear rate law at first and next the parabolic rate law during the constant current anodization, and then the reciprocal logarithmic rate law during the constant voltage anodization following after the constant current process. From the Auger electron spectroscopy analysis, it is found that the shape of the compositional depth profile of the grown oxide film varies associating with the rate law of oxidation obeyed. The variation of depth profile correlating with the rate law is discussed with respect to each elementary process such as the transport and/or the reaction of chemical species interpreted from the over-all behavior of anodization process. It is revealed that the stoichiometric film having an interface with sharp transition, which is favorable for obtaining excellent electrical properties of the capacitor, can be obtained under the condition that the phase-boundary reaction is the rate-determining step of the anodization. The constant voltage anodization process also satisfies such circumstances and therefore can be favorable method for preparing highquality thin-film capacitors. (author)

Contribution towards ALD and MOCVD of rare earth oxides and hafnium oxide. From precursor evaluation to process development and thin film characterization

International Nuclear Information System (INIS)

Xu, Ke

2013-01-01

elements for ALD applications. A possible synthesis route is the salt metatheses route. It could be expected that the monodentate guanidine ligand would provide increased reactivity towards water, where the bulky guanidine ligands will shield the RE center providing self-limiting growth behavior. In Chapter 4 and 7, ALD of rare earth oxides and hafnium oxide using corresponding guanidinate precursors are in detail investigated. According to the measurements, these processes are true ALD processes with broad ALD windows, high growth per cycle in the saturated area. Furthermore, the rare earth guanidinate and hafnium guanidinate precursors exhibit matching ALD window in the temperature range of 200 - 225 C. This motivated us to deposite trinary oxide thin films (HfREOx) using corresponding precursor combinations.

An overview of the oxidation performance of silicide diffusion coatings for vanadium-based alloys for generation IV reactors

International Nuclear Information System (INIS)

Chaia, N.; Mathieu, S.; Cozzika, T.; Rouillard, F.; Desgranges, C.; Courouau, J.L.; Petitjean, C.; David, N.; Vilasi, M.

2013-01-01

Highlights: ► Diffusion barrier to oxygen were manufactured by pack cementation diffusion process. ► The use of CrSi 2 + Si and TiSi 2 + Si as masteralloys increased the quality of the coating. ► Thermodynamic stability (coatings/vanadium) was obtained at the operating temperature. ► MSi 2 coatings developed low growing oxide scale in air and at low oxygen pressure. ► Coatings presented high compatibility with liquid sodium ( 2 ) for 360 h. - Abstract: This study focuses on the development of new protective coatings for the vanadium-based alloy V-4Cr-4Ti. Halide-activated pack-cementation (HAPC) technique was used to develop V x Si y multilayered diffusive silicide coatings. The outer layers (coatings) were formed of VSi 2 doped with 27 at.% Cr or TiSi 2 . These compounds exhibited a very low oxidation rate at 650 °C, both in air and at a low oxygen pressure (He, 5 ppm O 2 ). The coatings formed mainly of MSi 2 were found to be insensitive to pesting and largely unreactive to liquid sodium ( 2 ) during a 360 h compatibility test at 550 °C.

Effects of ball milling on microstructures and thermoelectric properties of higher manganese silicides

International Nuclear Information System (INIS)

Chen, Xi; Shi, Li; Zhou, Jianshi; Goodenough, John B.

2015-01-01

Highlights: • The already low κ L of HMS can be suppressed further by decreasing the grain size. • The ball milling process can lead to the formation of secondary MnSi and W/C-rich phases. • The formation of the MnSi ad W/C rich phases is found to suppress the thermoelectric power factor. - Abstract: Bulk nanostructured higher manganese silicide (HMS) samples with different grain size are prepared by melting, subsequent ball milling (BM), and followed by spark plasma sintering (SPS). The effects of BM time on the microstructures and thermoelectric properties of these samples are investigated. It is found that BM effectively reduces the grain size to about 90 nm in the sample after SPS, which leads to a decrease in both the thermal conductivity and electrical conductivity. By prolonging the BM time, MnSi and tungsten/carbon-rich impurity phases are formed due to the impact-induced decomposition of HMS and contamination from the tungsten carbide jar and balls during the BM, respectively. These impurities result in a reduced Seebeck coefficient and increased thermal conductivity above room temperature. The measured size-dependent lattice thermal conductivities agree qualitatively with the reported calculation results based on a combined phonon and diffuson model. The size effects are found to be increasingly significant as temperature decreases. Because of the formation of the impurity phases and a relatively large grain size, the ZT values are not improved in the ball-milled HMS samples. These findings suggest the need of alternative approaches for the synthesis of pure HMS with further reduced grain size and controlled impurity doping in order to enhance the thermoelectric figure-of-merit of HMS via nanostructuring

Nano-crystals of cerium–hafnium binary oxide: Their size-dependent structure

Energy Technology Data Exchange (ETDEWEB)

Raitano, Joan M. [Department of Applied Physics and Applied Mathematics, Materials Science and Engineering Program, Columbia University, New York, NY 10027 (United States); Khalid, Syed [National Synchrotron Light Source, Brookhaven National Laboratory, Upton, NY 11973 (United States); Marinkovic, Nebojsa [Chemical Engineering Department, Columbia University, 500 W 120th St, Mudd 801, New York, NY 10027 (United States); Chan, Siu-Wai, E-mail: sc174@columbia.edu [Department of Applied Physics and Applied Mathematics, Materials Science and Engineering Program, Columbia University, New York, NY 10027 (United States)

2015-09-25

Highlights: • (1 − x)CeO{sub 2}–xHfO{sub 2} was precipitated (0 < x < 1) and calcined in air. • For x ⩽ 0.14, crystallites ⩽140 nm in size exhibit only the fluorite structure. • This low hafnia solubility is attributable to no auto-reduction (Ce{sup 3+} = 0). • The low solubility is also due to the high temperature required for homogenization. • Coarsening is lessened as Hf{sup 4+} ions slow cation diffusion in these crystallites. - Abstract: Cerium oxide (CeO{sub 2}, “ceria”) and hafnium oxide (HfO{sub 2}, “hafnia”) were aqueously co-precipitated and subsequently calcined to allow for homogenization. The size of the (1−x)CeO{sub 2}–xHfO{sub 2} crystallites, determined by the Scherrer equation, varied from 140 nm for x = 0 to 15 nm for x = 0.73. For x ⩽ 0.14, only cubic structures are visible in X-ray diffractograms, and the lattice parameters are consistent with the values expected for structurally cubic solid solutions of hafnia in ceria. At x = 0.26, tetragonal and monoclinic phases nucleated with the former not being observed in the bulk phase diagram for ceria–hafnia. Therefore, the solubility limit of the cubic structure is between x = 0.14 and x = 0.26 for 40–61 nm crystallites, the sizes of these respective compositions. More specifically, for the 40 nm crystallites of x = 0.26 (1 − x)CeO{sub 2}–xHfO{sub 2}, 15% of the hafnia remains in a structurally cubic solid solution with ceria based on the observed cubic lattice parameter. The compositional domain for the cubic fluorite structure in this study is narrower than other nanostructured (1 − x)CeO{sub 2}–xHfO{sub 2} studies, especially studies with crystallite sizes less than 10 nm, but wider than observed in the bulk and helps to expand the size regime over which the relationship between crystallite size and phase stability is known. The extent of this cubic-structure domain is mainly attributable to the intermediate crystallite size and the roughly zero Ce{sup 3

Processing map and hot working mechanisms in a P/M TiAl alloy composite with in situ carbide and silicide dispersions

International Nuclear Information System (INIS)

Rao, K.P.; Prasad, Y.V.R.K.

2010-01-01

Research highlights: Mechanical alloying of Ti and Al with small additions of Si and C was used to synthesize metastable phases, which were incorporated in Ti-Al matrices using powder metallurgy techniques. These metastable phases (or also called as precursors), at higher temperatures, transformed in situ into very fine hard reinforcements that develop coherent interface with the surrounding matrix. Typically, Ti5Si3 and TiC are the end products after the synthesis of composite. In this study, hot working behavior of such composites has been studied using the concepts of processing maps to identify the safe and best processing conditions that should be adopted while forming this composite. Also, kinetic analysis of hot deformation has been performed to identify the dominant deformation mechanism. The results are compared with that of base TiAl matrix. The powder metallurgy route offers the advantage of working the material at much lower temperatures compared to the traditional cast and forge route. - Abstract: A titanium aluminide alloy composite with in situ carbide and silicide dispersions has been synthesized by mixing 90% of matrix with elemental composition of 46Ti-46Al-4Nb-2Cr-2Mn and 10% precursor with composition 55Ti-27Al-12Si-6C prepared by mechanical alloying. The powder mixture was blended for 2 h followed by hot isostatic pressing (HIP) at 1150 deg. C for 4 h under a pressure of 150 MPa. In addition to TiAl alloy matrix, the microstructure of the HIP'ed billet showed a small volume fraction of Nb-rich intermetallic phase along with carbide and silicide dispersions formed in situ during HIP'ing. Cylindrical specimens from the HIP'ed billets were compressed at temperatures and strain rates in the ranges of 800-1050 deg. C and 0.0001-1 s -1 . The flow curves exhibited flow softening leading to a steady-state flow at strain rates lower than 0.01 s -1 while fracture occurred at higher strain rates. The processing map developed on the basis of flow stress at

Mechanical properties of thermoelectric n-type magnesium silicide synthesized employing in situ spark plasma reaction sintering

Science.gov (United States)

Muthiah, Saravanan; Singh, R. C.; Pathak, B. D.; Dhar, Ajay

2017-07-01

Thermoelectric devices employing magnesium silicide (Mg2Si) offer an inexpensive and non-toxic solution for green energy generation compared to other existing conventional thermoelectric materials in the mid-temperature range. However, apart from the thermoelectric performance, their mechanical properties are equally important in order to avoid the catastrophic failure of their modules during actual operation. In the present study, we report the synthesis of Mg2Si co-doped with Bi and Sb employing in situ spark plasma reaction sintering and investigate its broad range of mechanical properties. The mechanical properties of the sintered co-doped Mg2Si suggest a significantly enhanced value of hardness ~5.4  ±  0.2 GPa and an elastic modulus ~142.5  ±  6 GPa with a fracture toughness of ~1.71  ±  0.1 MPa  √m. The thermal shock resistance, which is one of the most vital parameter for designing thermoelectric devices, was found to be ~300 W m-1, which is higher than most of the other existing state-of-the-art mid-temperature thermoelectric materials. The friction and wear characteristics of sintered co-doped Mg2Si have been reported for the first time, in order to realize the sustainability of their thermoelectric modules under actual hostile environmental conditions.

L2₁ and XA Ordering Competition in Hafnium-Based Full-Heusler Alloys Hf₂VZ (Z = Al, Ga, In, Tl, Si, Ge, Sn, Pb).

Science.gov (United States)

Wang, Xiaotian; Cheng, Zhenxiang; Wang, Wenhong

2017-10-20

For theoretical designing of full-Heusler based spintroinc materials, people have long believed in the so-called Site Preference Rule (SPR). Very recently, according to the SPR, there are several studies on XA-type Hafnium-based Heusler alloys X₂YZ, i.e., Hf₂VAl, Hf₂CoZ (Z = Ga, In) and Hf₂CrZ (Z = Al, Ga, In). In this work, a series of Hf₂-based Heusler alloys, Hf₂VZ (Z = Al, Ga, In, Tl, Si, Ge, Sn, Pb), were selected as targets to study the site preferences of their atoms by first-principle calculations. It has been found that all of them are likely to exhibit the L2₁-type structure instead of the XA one. Furthermore, we reveal that the high values of spin-polarization of XA-type Hf₂VZ (Z = Al, Ga, In, Tl, Si, Ge, Sn, Pb) alloys have dropped dramatically when they form the L2₁-type structure. Also, we prove that the electronic, magnetic, and physics nature of these alloys are quite different, depending on the L2₁-type or XA-type structures.

Controlled growth of periodically aligned copper-silicide nanocrystal arrays on silicon directed by laser-induced periodic surface structures (LIPSS)

Science.gov (United States)

Nürnberger, Philipp; Reinhardt, Hendrik M.; Rhinow, Daniel; Riedel, René; Werner, Simon; Hampp, Norbert A.

2017-10-01

In this paper we introduce a versatile tool for the controlled growth and alignment of copper-silicide nanocrystals. The method takes advantage of a unique self-organization phenomenon denoted as laser-induced periodic surface structures (LIPSS). Copper films (3 ± 0.2 nm) are sputter-deposited onto single crystal silicon (100) substrates with a thin oxide layer (4 ± 0.2 nm), and subsequently exposed to linearly polarized nanosecond laser pulses (τ ≈ 6 ns) at a central wavelength of 532 nm. The irradiation triggers dewetting of the Cu film and simultaneous formation of periodic Cu nanowires (LIPSS), which partially penetrate the oxide layer to the Si substrate. These LIPSS act as nucleation centers for the growth of Cu-Si crystals during thermal processing at 500 °C under forming gas 95/5 atmosphere. Exemplified by our model system Cu/SiO2/Si, LIPSS are demonstrated to facilitate the diffusion reaction between Cu and underlying Si. Moreover, adjustment of the laser polarization allows us to precisely control the nanocrystal alignment with respect to the LIPSS orientation. Potential applications and conceivable alternatives of this process are discussed.

Synthesis and characterization of β-phase iron silicide nano-particles by chemical reduction

International Nuclear Information System (INIS)

Sen, Sabyasachi; Gogurla, Narendar; Banerji, Pallab; Guha, Prasanta K.; Pramanik, Panchanan

2015-01-01

Graphical abstract: - Highlights: • β-FeSi 2 nano-particle was synthesized by reducing with Mg and by diluting with MgO. • XRD profile shows the iron di-silicide phase to be semiconducting β-FeSi 2 . • HRTEM and FESEM images indicate the β-FeSi 2 average particle size to be 60–70 nm. • Absorption, reflectance and PL spectroscopy show band gap to be direct 0.87 eV. • Nano-β-FeSi 2 is p-type with hole density of 4.38 × 10 18 cm −3 and mobility 8.9 cm 2 /V s. - Abstract: Nano-particles of β-FeSi 2 have been synthesized by chemical reduction of a glassy phase of [Fe 2 O 3 , 4SiO 2 ] by Mg-metal where MgO is used as diluent to prevent the agglomeration of nano crystallites into micro-particles and also act as a negative catalyst for the formation of other phases. The sample is characterized by XRD, FESEM, HRTEM, EDX, ultra-violet-visible-infrared and PL spectroscopy and electronic properties have been investigated by Hall measurement. XRD profile shows that the synthesized powder consists of purely β-FeSi 2 semiconducting phase. The average crystallite size of β-FeSi 2 is determined to be around 65.4 nm from XRD peaks as well as from FESEM also. The optical absorption and PL spectroscopy shows that synthesized β-FeSi 2 phase is a direct band gap semiconductor with a value of 0.87 eV. Hall measurements show that β-FeSi 2 nano-particles is p-type with hole concentration of 4.38 × 10 18 cm −3 and average hole mobility of 8.9 cm 2 /V s at 300 K

Effects of ball milling on microstructures and thermoelectric properties of higher manganese silicides

Energy Technology Data Exchange (ETDEWEB)

Chen, Xi [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, TX 78712 (United States); Shi, Li, E-mail: lishi@mail.utexas.edu [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, TX 78712 (United States); Department of Mechanical Engineering, The University of Texas at Austin, Austin, TX 78712 (United States); Zhou, Jianshi; Goodenough, John B. [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, TX 78712 (United States); Department of Mechanical Engineering, The University of Texas at Austin, Austin, TX 78712 (United States)

2015-08-25

Highlights: • The already low κ{sub L} of HMS can be suppressed further by decreasing the grain size. • The ball milling process can lead to the formation of secondary MnSi and W/C-rich phases. • The formation of the MnSi ad W/C rich phases is found to suppress the thermoelectric power factor. - Abstract: Bulk nanostructured higher manganese silicide (HMS) samples with different grain size are prepared by melting, subsequent ball milling (BM), and followed by spark plasma sintering (SPS). The effects of BM time on the microstructures and thermoelectric properties of these samples are investigated. It is found that BM effectively reduces the grain size to about 90 nm in the sample after SPS, which leads to a decrease in both the thermal conductivity and electrical conductivity. By prolonging the BM time, MnSi and tungsten/carbon-rich impurity phases are formed due to the impact-induced decomposition of HMS and contamination from the tungsten carbide jar and balls during the BM, respectively. These impurities result in a reduced Seebeck coefficient and increased thermal conductivity above room temperature. The measured size-dependent lattice thermal conductivities agree qualitatively with the reported calculation results based on a combined phonon and diffuson model. The size effects are found to be increasingly significant as temperature decreases. Because of the formation of the impurity phases and a relatively large grain size, the ZT values are not improved in the ball-milled HMS samples. These findings suggest the need of alternative approaches for the synthesis of pure HMS with further reduced grain size and controlled impurity doping in order to enhance the thermoelectric figure-of-merit of HMS via nanostructuring.

Growth of conductive HfO{sub 2-x} thin films by reactive molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany); Kleebe, Hans-Joachim [Institut fuer Angewandte Geowissenschaften, TU Darmstadt (Germany)

2009-07-01

Thin films of oxygen deficient hafnium oxide were grown on single crystal c-cut and r-cut sapphire substrates by reactive molecular beam epitaxy. The oxidation conditions during growth were varied within a wide range using RF-activated oxygen. Hafnium oxide thin films were characterized using X-ray diffraction, resistivity measurements ({rho}-T) and transmission electron microscopy (TEM). The results show a dramatic increase in conductivity of the deposited oxygen deficient hafnium oxide thin films with decreasing oxidation conditions during growth. The electrical properties of deficient hafnium oxide thin films varied from insulating over semiconducting to conducting. X-ray diffraction data as well as TEM data rule out the possibility of conductivity due to metallic hafnium.

Hafnium in peralkaline and peraluminous boro-aluminosilicate glass, and glass subcomponents: a solubility study

International Nuclear Information System (INIS)

Davis, Linda L.; Darab, John G.; Qian, Maoxu; Zhao, Donggao; Palenik, Christopher S.; Li, Hong; Strachan, Denis M.; Li, Liyu

2003-01-01

A relationship between the solubility of hafnia (HfO2) and the host glass composition was explored by determining the solubility limits of HfO2 in peralkaline and peraluminous borosilicate glasses in the system SiO2-Al2O3-B2O3-Na2O, and in glasses in the system SiO2-Na2O-Al2O3 in air at 1450 C. The only Hf-bearing phase to crystallize in the peralkaline borosilicate melts is hafnia, while in the boron-free melts sodium-hafnium silicates crystallize. All peraluminous borosilicate melts crystallize hafnia, but the slightly peraluminous glasses also have sector-zoned hafnia crystals that contain Al and Si. The more peraluminous borosilicate glasses also crystallize a B-containing mullite. The general morphology of the hafnia crystals changes as peralkalinity (Na2O/(Na2O+Al2O3)) decreases, as expected in melts with increasing viscosity. In all of the glasses with Na2O > Al2O3, the solubility of hafnia is linearly and positively correlated with Na2O/(Na2O + Al2O3) or Na2O - Al2O3 (excess sodium), despite the presence of 5 to 16 mol% B2O3. The solubility of hafnia is higher in the sodium-aluminum borosilicate glasses than in the sodium-aluminosilicate glasses, suggesting that the boron is enhancing the effect that excess sodium has on the incorporation of Hf into the glass structure. The results of this solubility study are compared to other studies of high-valence cation solubility in B-free silicate melts. From this, for peralkaline B-bearing glasses, it is shown that, although the solubility limits are higher, the solution behavior of hafnia is the same as in B-free silicate melts previously studied. By comparison, also, it is shown that in peraluminous melts, there must be a different solution mechanism for hafnia: different than for peralkaline sodium-aluminum borosilicate glasses and different than for B-free silicate melts studied by others

Loading rate and test temperature effects on fracture of in situ niobium silicide-niobium composites

International Nuclear Information System (INIS)

Rigney, J.D.; Lewandowski, J.J.

1996-01-01

Arc cast, extruded, and heat-treated in situ composites of niobium silicide (Nb 5 Si 3 ) intermetallic with niobium phases (primary--Nb p and secondary--Nb s ) exhibited high fracture resistance in comparison to monolithic Nb 5 Si 3 . In toughness tests conducted at 298 K and slow applied loading rates, the fracture process proceeded by the microcracking of the Nb 5 Si 3 and plastic deformation of the Nb p and Nb s phases, producing resistance-curve behavior and toughnesses of 28 MPa√m with damage zone lengths less than 500 microm. The effects of changes in the Nb p yield strength and fracture behavior on the measured toughnesses were investigated by varying the loading rates during fracture tests at both 77 and 298 K. Quantitative fractography was utilized to completely characterize each fracture surface created at 298 K in order to determine the type of fracture mode (i.e., dimpled, cleavage) exhibited by the Nb p . Specimens tested at either higher loading rates or lower test temperatures consistently exhibited a greater amount of cleavage fracture in the Nb p , while the Nb s always remained ductile. However, the fracture toughness values determined from experiments spanning six orders of magnitude in loading rate at 298 and 77 K exhibited little variation, even under conditions when the majority of Nb p phases failed by cleavage at 77 K. The changes in fracture mode with increasing loading rate and/or decreasing test temperature and their effects on fracture toughness are rationalized by comparison to existing theoretical models

Evaluation of steam corrosion and water quenching behavior of zirconium-silicide coated LWR fuel claddings

Science.gov (United States)

Yeom, Hwasung; Lockhart, Cody; Mariani, Robert; Xu, Peng; Corradini, Michael; Sridharan, Kumar

2018-02-01

This study investigates steam corrosion of bulk ZrSi2, pure Si, and zirconium-silicide coatings as well as water quenching behavior of ZrSi2 coatings to evaluate its feasibility as a potential accident-tolerant fuel cladding coating material in light water nuclear reactor. The ZrSi2 coating and Zr2Si-ZrSi2 coating were deposited on Zircaloy-4 flats, SiC flats, and cylindrical Zircaloy-4 rodlets using magnetron sputter deposition. Bulk ZrSi2 and pure Si samples showed weight loss after the corrosion test in pure steam at 400 °C and 10.3 MPa for 72 h. Silicon depletion on the ZrSi2 surface during the steam test was related to the surface recession observed in the silicon samples. ZrSi2 coating (∼3.9 μm) pre-oxidized in 700 °C air prevented substrate oxidation but thin porous ZrO2 formed on the coating. The only condition which achieved complete silicon immobilization in the oxide scale in aqueous environments was the formation of ZrSiO4 via ZrSi2 coating oxidation in 1400 °C air. In addition, ZrSi2 coatings were beneficial in enhancing quenching heat transfer - the minimum film boiling temperature increased by 6-8% in the three different environmental conditions tested. During repeated thermal cycles (water quenching from 700 °C to 85 °C for 20 s) performed as a part of quench tests, no spallation and cracking was observed and the coating prevented oxidation of the underlying Zircaloy-4 substrate.

Jordan Research and Training Reactor (JRTR) Utilization Facilities

International Nuclear Information System (INIS)

Xoubi, N.

2013-01-01

Jordan Research and Training Reactor (JRTR) is a 5 MW light water open pool multipurpose reactor that serves as the focal point for Jordan National Nuclear Centre, and is designed to be utilized in three main areas: Education and training, nuclear research, and radioisotopes production and other commercial and industrial services. The reactor core is composed of 18 fuel assemblies, MTR plate type 19.75% enriched uranium silicide (U 3 Si 2 ) in aluminium matrix, and is reflected on all sides by beryllium and graphite. The reactor power is upgradable to 10 MW with a maximum thermal flux of 1.45×10 14 cm -2 s -1 , and is controlled by a Hafnium control absorber rod and B 4 C shutdown rod. The reactor is designed to include laboratories and classrooms that will support the establishment of a nuclear reactor school for educating and training students in disciplines like nuclear engineering, reactor physics, radiochemistry, nuclear technology, radiation protection, and other related scientific fields where classroom instruction and laboratory experiments will be related in a very practical and realistic manner to the actual operation of the reactor. JRTR is designed to support advanced nuclear research as well as commercial and industrial services, which can be preformed utilizing any of its 35 experimental facilities. (author)

Crucible-Free Synthesis of Silicides and Borides; Synthese de siliciures et de borures sans creuset; Bestigel'nyj sintez silitsidov i boridov; Sintesis de siliciuros y boruros sin crisol

Energy Technology Data Exchange (ETDEWEB)

Ban, Z.; Sikirica, M. [Rudjer Boskovic Institute, Zagreb, Yugoslavia (Croatia)

1963-11-15

The laboratory method for preparing pure silicides and borides, reducing the corresponding oxides of metals, has been developed. Synthesis of silicides was carried out in the floating zone of molten silicon. The floating zone was obtained by means of electron bombardment. Synthesis of borides is similar but reactions are generally of the solid-solid type. Initial heating of the reaction mixture was also obtained by means of the electron beam but further heating was produced by the ionized gaseous products of the reaction. (author) [French] On a mis au point une methode pour la preparation en laboratoire de siliciures et de borures purs, par reduction des oxydes des metaux correspondants. La synthese des siliciures a pu etre faite dans la ''zone flottante'' du silicium fondu. Cette zone flottante a ete obtenue par bombardement electronique. La synthese des borures est analogue, mais les reactions ont lieu generalement a Tetat solide. Le chauffage initial du melange reactionnel a egalement ete obtenu pai bombardement electronique, mais le chauffage ulterieur etait assure par les electrons diffuses des produits ionises gazeux de la reaction. (author) [Spanish] Los autores idearon un metodo de laboratorio para preparar siliciuros y boruros puros por reduccion de los respectivos oxidos metalicos. La sintesis de los siliciuros se llevo a cabo en la zona flotante del silicio fundido. Esa zona se obtuvo por bombardeo electronico. La sintesis de los boruros se llevo a cabo de manera similar, pero generalmente las reacciones son del tipo solido-solido. El calentamiento inicial de la mezcla se efectuo tambien mediante un haz electronico, pero el calentamiento ulterior es producido por la dispersion electronica en los productos de reaccion ionizados en estado gaseoso. (author) [Russian] Razrabotan laboratornyj metod prigotovleniya chistykh silitsidov i boridov putem vosstanovleniya sootvetstvennykh okislov metalla. Sintez, silitsidov provodili v plavayushchej zone

Fuel loading and homogeneity analysis of HFIR design fuel plates loaded with uranium silicide fuel

International Nuclear Information System (INIS)

Blumenfeld, P.E.

1995-08-01

Twelve nuclear reactor fuel plates were analyzed for fuel loading and fuel loading homogeneity by measuring the attenuation of a collimated X-ray beam as it passed through the plates. The plates were identical to those used by the High Flux Isotope Reactor (HFIR) but were loaded with uranium silicide rather than with HFIR's uranium oxide fuel. Systematic deviations from nominal fuel loading were observed as higher loading near the center of the plates and underloading near the radial edges. These deviations were within those allowed by HFIR specifications. The report begins with a brief background on the thermal-hydraulic uncertainty analysis for the Advanced Neutron Source (ANS) Reactor that motivated a statistical description of fuel loading and homogeneity. The body of the report addresses the homogeneity measurement techniques employed, the numerical correction required to account for a difference in fuel types, and the statistical analysis of the resulting data. This statistical analysis pertains to local variation in fuel loading, as well as to ''hot segment'' analysis of narrow axial regions along the plate and ''hot streak'' analysis, the cumulative effect of hot segment loading variation. The data for all twelve plates were compiled and divided into 20 regions for analysis, with each region represented by a mean and a standard deviation to report percent deviation from nominal fuel loading. The central regions of the plates showed mean values of about +3% deviation, while the edge regions showed mean values of about -7% deviation. The data within these regions roughly approximated random samplings from normal distributions, although the chi-square (χ 2 ) test for goodness of fit to normal distributions was not satisfied

Synthesis and characterization of hafnium carbide microcrystal chains with a carbon-rich shell via CVD

International Nuclear Information System (INIS)

Tian, Song; Li, Hejun; Zhang, Yulei; Liu, Sen; Fu, Yangxi; Li, Yixian; Qiang, Xinfa

2013-01-01

Graphical abstract: Novel HfC microcrystal chains have been synthesized via a catalyst-assisted chemical vapor deposition process. SEM results show the chains have a periodically changing diameter and a nanoscale sharpening tip. Analysis of TEM/SAED/EELS/EDX data shows the single-crystal chains grow along a [0 0 1] direction and consist of a HfC core and a thin carbon-rich shell with embedded HfC nanocrystallites surrounding the core. This work achieves the controllable preparation of nanoscale HfC sharpening tips for application as a point electron emission source and facilitates the application of HfC ultrafast laser-triggered tips in attosecond science. Highlights: •HfC microcrystal chains were synthesized by a catalyst-assisted CVD. •The chains grow along a [0 0 1] direction and have a periodically changing diameter. •Single-crystal HfC core is sheathed by a thin carbon-rich shell. •A growth mechanism model is proposed to explain the growth of microcrystal chians. •This work achieves the controllable preparation of nanoscale HfC sharpening tips. -- Abstract: Novel hafnium carbide (HfC) microcrystal chains, with a periodically changing diameter and a nanoscale sharpening tip at the chain end, have been synthesized via a catalyst-assisted chemical vapor deposition (CVD) process. The as-synthesized chains with many octahedral microcrystals have diameters of between several hundreds of nm and 6 μm and lengths of ∼500 μm. TEM diffraction studies show that the chains are single-crystalline HfC and preferentially grow along a [0 0 1] crystal orientation. TEM/EELS/EDX analysis proves the chains are composed of a HfC core and a thin (several tens of nm to 100 nm) carbon-rich shell with the embedded HfC nanocrystallites (typically below 10 nm) surrounding the core. The growth mechanism model for the chains based on the vapor–liquid–solid process, the vapor–solid process, and the HfC crystal growth characteristics is discussed

Design of an Extractive Distillation Column for the Environmentally Benign Separation of Zirconium and Hafnium Tetrachloride for Nuclear Power Reactor Applications

Directory of Open Access Journals (Sweden)

Le Quang Minh

2015-09-01

Full Text Available Nuclear power with strengthened safety regulations continues to be used as an important resource in the world for managing atmospheric greenhouse gases and associated climate change. This study examined the environmentally benign separation of zirconium tetrachloride (ZrCl4 and hafnium tetrachloride (HfCl4 for nuclear power reactor applications through extractive distillation using a NaCl-KCl molten salt mixture. The vapor–liquid equilibrium behavior of ZrCl4 and HfCl4 over the molten salt system was correlated with Raoult’s law. The molten salt-based extractive distillation column was designed optimally using a rigorous commercial simulator for the feasible separation of ZrCl4 and HfCl4. The molten salt-based extractive distillation approach has many potential advantages for the commercial separation of ZrCl4 and HfCl4 compared to the conventional distillation because of its milder temperatures and pressure conditions, smaller number of required separation trays in the column, and lower energy requirement for separation, while still taking the advantage of environmentally benign feature by distillation. A heat-pump-assisted configuration was also explored to improve the energy efficiency of the extractive distillation process. The proposed enhanced configuration reduced the energy requirement drastically. Extractive distillation can be a promising option competing with the existing extraction-based separation process for zirconium purification for nuclear power reactor applications.

Cobalt(II), nickel(II), copper(II), zinc(II) and hafnium(IV) complexes of N'-(furan-3-ylmethylene)-2-(4-methoxyphenylamino)acetohydrazide.

Science.gov (United States)

Emam, Sanaa M; El-Saied, Fathy A; Abou El-Enein, Saeyda A; El-Shater, Heba A

2009-03-01

Cobalt(II), nickel(II), copper(II), zinc(II) and hafnium(IV) complexes of furan-2-carbaldehyde 4-methoxy-N-anilinoacetohydrazone were synthesized and characterized by elemental and thermal (TG and DTA) analyses, IR, UV-vis and (1)H NMR spectra as well as magnetic moment and molar conductivity. Mononuclear complexes are obtained with 1:1 molar ratio except complexes 3 and 9 which are obtained with 1:2 molar ratios. The IR spectra of ligand and metal complexes reveal various modes of chelation. The ligand behaves as a neutral bidentate one and coordination occurs via the carbonyl oxygen atom and azomethine nitrogen atom. The ligand behaves also as a monobasic tridentate one and coordination occurs through the enolic oxygen atom, azomethine nitrogen atom and the oxygen atom of furan ring. Moreover, the ligand behaves as a neutral tridentate and coordination occurs via the carbonyl oxygen, azomethine nitrogen and furan oxygen atoms as well as a monobasic bidentate and coordination occurs via the enolic oxygen atom and azomethine nitrogen atom. The electronic spectra and magnetic moment measurements reveal that all complexes possess octahedral geometry except the copper complex 10 possesses a square planar geometry. The thermal studies showed the type of water molecules involved in metal complexes as well as the thermal decomposition of some metal complexes.

Comparison of HfCl4, HfI4, TEMA-Hf, and TDMA-Hf as precursors in early growing stages of HfO2 films deposited by ALD: A DFT study

Science.gov (United States)

Cortez-Valadez, M.; Fierro, C.; Farias-Mancilla, J. R.; Vargas-Ortiz, A.; Flores-Acosta, M.; Ramírez-Bon, R.; Enriquez-Carrejo, J. L.; Soubervielle-Montalvo, C.; Mani-Gonzalez, P. G.

2016-06-01

The final structure of HfO2 films grown by atomic layer deposition (ALD) after reaction with OH- ions has been analyzed by DFT (density functional theory). The interaction of the precursors: HfCl4 (hafnium tetrachloride), HfI4 (hafnium tetraiodide), TEMA-Hf (tetrakis-ethylmethylamino hafnium), and TDMA-Hf (tetrakis-dimethylamino hafnium) with HO-H was studied employing the B3LYP (Becke 3-parameter, Lee-Yang-Parr) hybrid functional and the PBE (Perdew-Burke-Ernzerhof) generalized gradient functional. The structural evolution at the Si(100) surface has been analyzed by LDA (local density approximation). The structural parameters: bond length and bond angle, and the vibrational parameters for the optimized structures are also reported. The presence of hafnium silicate at the interface was detected. The infrared spectra and structural parameters obtained in this work agree with previously reported experimental results.

A spanish mineral of zirconium and hafnium. Separation of the two elements by liquid-liquid extraction, using tributyl phosphate as chelating agent; Beneficio de un mineral espanol de circonio-hafnio. Separacion de ambos elementos por extraccion liquido-liquido, empleando fosfato de tributilo como agente de quelacion

Energy Technology Data Exchange (ETDEWEB)

Ruiz Sanchez, F; Cruz Castillo, F. de la; Fernandez Cellini, R

1962-07-01

The zirconium and Hafnium oxides are obtained from a Spanish mineral of zircon with an average contest of 55% in ZrO{sub 2}-HfO{sub 2}. An alkaline fusion to open the mineral, followed by a purification by crystallization as (Zr O-Hf O)Cl{sub 2} H{sub 2}O or as (Zr-Hf) (SO{sub 4}){sub 2}. 4H{sub 2}O, is used. A discussion of the best experimental conditions for opening the mineral and of the purification method is made. (Author) 45 refs.

6-Peroxo-6-zirconium crown and its hafnium analogue embedded in a triangular polyanion: [M6(O2)6(OH)6(gamma-SiW10O36)3]18- (M = Zr, Hf).

Science.gov (United States)

Bassil, Bassem S; Mal, Sib Sankar; Dickman, Michael H; Kortz, Ulrich; Oelrich, Holger; Walder, Lorenz

2008-05-28

We have synthesized and structurally characterized the unprecedented peroxo-zirconium(IV) containing [Zr6(O2)6(OH)6(gamma-SiW10O36)3]18- (1). Polyanion 1 comprises a cyclic 6-peroxo-6-zirconium core stabilized by three decatungstosilicate units. We have also prepared the isostructural hafnium(IV) analogue [Hf6(O2)6(OH)6(gamma-SiW10O36)3]18- (2). We investigated the acid/base and redox properties of 1 by UV-vis spectroscopy and electrochemistry studies. Polyanion 1 represents the first structurally characterized Zr-peroxo POM with side-on, bridging peroxo units. The simple, one-pot synthesis of 1 and 2 involving dropwise addition of aqueous hydrogen peroxide could represent a general procedure for incorporating peroxo groups into a large variety of transition metal and lanthanide containing POMs.

The Ce-Ni-Si system as a representative of the rare earth-Ni-Si family: Isothermal section and new rare-earth nickel silicides

Energy Technology Data Exchange (ETDEWEB)

Morozkin, A.V., E-mail: morozkin@tech.chem.msu.ru [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, Moscow, GSP-1, 119991 (Russian Federation); Knotko, A.V.; Garshev, A.V. [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, Moscow, GSP-1, 119991 (Russian Federation); Faculty of Materials Science, Moscow State University, Leninskie Gory, House 1, Building 73, Moscow, GSP-1, 119991 (Russian Federation); Yapaskurt, V.O. [Department of Petrology, Geological Faculty Moscow State University, Leninskie Gory, Moscow 119991 (Russian Federation); Nirmala, R. [Indian Institute of Technology Madras, Chennai 600036 (India); Quezado, S.; Malik, S.K. [Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, Natal, 59082-970 (Brazil)

2016-11-15

Si{sub 2}; while no appreciable solubility was observed for the other binary compounds of the Ce-Ni-Si system. As a prolongation of Rare Earth-Ni-Si system’s isostructural rows, LaNi{sub 7}Si{sub 6} and YNi{sub 6.6}Si{sub 6.1} (GdNi{sub 7}Si{sub 6}-type), ScNi{sub 6}Si{sub 6} (YCo{sub 6}Ge{sub 6}-type), NdNi{sub 6}Si{sub 6} (YNi{sub 6}Si{sub 6}-type), (Tb, Ho){sub 2}Ni{sub 15}Si{sub 2} (Th{sub 2}Zn{sub 17}-type), Nd{sub 2}Ni{sub 2.3}Si{sub 0.7} and Sm{sub 2}Ni{sub 2.2}Si{sub 0.8} (Mo{sub 2}NiB{sub 2}-type), Nd{sub 3}Ni{sub 2.55}Si{sub 1.45} (W{sub 3}CoB{sub 3}-type) and (Tb, Dy){sub 7}Ni{sub 50}Si{sub 19} (Y{sub 7}Ni{sub 49}Si{sub 20}-type) compounds were synthesized and investigated. Magnetic properties of the CeNi{sub 6}Si{sub 6}, CeNi{sub 7}Si{sub 6}, CeNi{sub 8.8}Si{sub 4.2}, Ce{sub 6}Ni{sub 7}Si{sub 4}, CeNi{sub 5}Si, Ce{sub 2}Ni{sub 2.5}Si{sub 0.5}, Nd{sub 2}Ni{sub 2.3}Si{sub 0.7} and Dy{sub 7}Ni{sub 50}Si{sub 19} compounds have also been investigated and are presented here. - Highlights: • Ce-Ni-Si isothermal section was obtained at 870/1070 K. • Twenty one known ternary cerium nickel silicides were confirmed in Ce-Ni-Si. • Five new cerium nickel silicides were detected in Ce-Ni-Si. • Eleven new rare earth nickel silicides were detected in R-Ni-Si. • Magnetic properties of eight rare earth nickel silicides were investigated.

Significant enhancement in thermoelectric performance of nanostructured higher manganese silicides synthesized employing a melt spinning technique.

Science.gov (United States)

Muthiah, Saravanan; Singh, R C; Pathak, B D; Avasthi, Piyush Kumar; Kumar, Rishikesh; Kumar, Anil; Srivastava, A K; Dhar, Ajay

2018-01-25

The limited thermoelectric performance of p-type Higher Manganese Silicides (HMS) in terms of their low figure-of-merit (ZT), which is far below unity, is the main bottle-neck for realising an efficient HMS based thermoelectric generator, which has been recognized as the most promising material for harnessing waste-heat in the mid-temperature range, owing to its thermal stability, earth-abundant and environmentally friendly nature of its constituent elements. We report a significant enhancement in the thermoelectric performance of nanostructured HMS synthesized using rapid solidification by optimizing the cooling rates during melt-spinning followed by spark plasma sintering of the resulting melt-spun ribbons. By employing this experimental strategy, an unprecedented ZT ∼ 0.82 at 800 K was realized in spark plasma sintered 5 at% Al-doped MnSi 1.73 HMS, melt spun at an optimized high cooling rate of ∼2 × 10 7 K s -1 . This enhancement in ZT represents a ∼25% increase over the best reported values thus far for HMS and primarily originates from a nano-crystalline microstructure consisting of a HMS matrix (20-40 nm) with excess Si (3-9 nm) uniformly distributed in it. This nanostructure, resulting from the high cooling rates employed during the melt-spinning of HMS, introduces a high density of nano-crystallite boundaries in a wide spectrum of nano-scale dimensions, which scatter the low-to-mid-wavelength heat-carrying phonons. This abundant phonon scattering results in a significantly reduced thermal conductivity of ∼1.5 W m -1 K -1 at 800 K, which primarily contributes to the enhancement in ZT.

Irradiation of an uranium silicide prototype in RA-3 reactor; Irradiacion de un elemento combustible prototipo de siliciuro de uranio en el RA-3

Energy Technology Data Exchange (ETDEWEB)

Calabrese, R; Estrik, G; Notari, C [Comision Nacional de Energia Atomica, San Martin (Argentina). Unidad de Actividad Reactores y Centrales Nucleares

1997-12-31

The factibility of irradiation of an uranium silicide (U{sub 3} Si{sub 2}) prototype in the RA-3 reactor was studied. The standard RA-3 fuel element uses U{sub 3} O{sub 8} as fissible material. The enrichment of both standard and prototype is the same: 20% U{sub 235} and also the frame geometry and number of plates is identical. The differences are in the plate dimensions and the fissile content which is higher in the prototype. The cooling conditions of the core allow the insertion of the prototype in any core position, even near the water trap, if the overall power is kept below 5Mw. Nevertheless, the recommendation was to begin irradiation near the periphery and later on move the prototype towards more central positions in order to increase the burnup rate. The prototype was effectively introduced in a peripheral position and the thermal fluxes were measured between plates with the foil activation technique. These were also evaluated with the fuel management codes and a reasonable agreement was found. (author). 5 refs., 3 figs., 3 tabs.

Valence electron structure analysis of the cubic silicide intermetallics in rapidly solidified Al-Fe-V-Si alloy

International Nuclear Information System (INIS)

Wang, J.Q.; Qian, C.F.; Zhang, B.J.; Tseng, M.K.; Xiong, S.W.

1996-01-01

The application of rapid solidification for the development of elevated temperature aluminum alloys has resulted in the emergence of several alloys based on the Al-Fe alloy system. Of particular interest are Al-Fe-V-Si alloys which have excellent room temperature and high temperature mechanical properties. In a pioneering study, Skinner et al. showed the stabilization of the cubic phase in ternary Al-Fe-Si alloy by the addition of a quaternary element, vanadium. The evolution of the microstructure in these alloys both during rapid solidification and subsequent processing is of crucial importance. Kim has demonstrated that the composition of the silicide phase in rapidly solidified Al-Fe-V-Si alloy is very close to Al 12 (Fe,V) 3 Si with the body centered cubic (bcc) structure. The structure is closely related to that of quasicrystals.In view of the structural features and the relationship between the α 12 and α 13 phases, the researching emphasis should firstly be put on the α 12 phase. In this paper the authors analyzed the α -(AlFeSi)(α 12 -type) phase from the angle of atomic valence electron structure other than the traditional methods of obtaining the diffraction spots of the phase. Several pieces of information were obtained about the hybrid levels and bond natures of every kind of atom in the α -(AlFeSi) phase. Finally the authors explained the phenomenon which V atom can substitute for Fe atom in the α 12 phase and improve the thermal stability of the phase in Al-Fe-V-Si alloy

Effects of (Al,Ge) double doping on the thermoelectric properties of higher manganese silicides

Energy Technology Data Exchange (ETDEWEB)

Chen, Xi; Salta, Daniel; Zhang, Libin [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Weathers, Annie [Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Zhou, Jianshi; Goodenough, John B.; Shi, Li [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States)

2013-11-07

Experiments and analysis have been carried out to investigate the effects of Al and (Al,Ge) doping on the microstructure and thermoelectric properties of polycrystalline higher manganese silicide (HMS) samples, which were prepared by solid-state reaction, ball milling, and followed by spark plasma sintering. It has been found that Al doping effectively increases the hole concentration, which leads to an increase in the electrical conductivity and power factor. By introducing the second dopant Ge into Al-doped HMS, the electrical conductivity is increased, and the Seebeck coefficient is decreased as a result of further increased hole concentration. The peak power factor is found to occur at a hole concentration between 1.8 × 10{sup 21} and 2.2 × 10{sup 21} cm{sup −3} measured at room temperature. The (Al,Ge)-doped HMS samples show lower power factors owing to their higher hole concentrations. The mobility of Mn(Al{sub 0.0035}Ge{sub y}Si{sub 0.9965-y}){sub 1.8} with y = 0.035 varies approximately as T{sup −3/2} above 200 K, suggesting acoustic phonon scattering is the dominant scattering mechanism. The thermal conductivity of HMS does not change appreciably by Al or (Al,Ge) doping. The maximum ZT of (Al,Ge)-doped HMS is 0.57 at 823 K, which is similar to the highest value found in the Al-doped HMS samples. The ZT values were reduced in the Mn(Al{sub 0.0035}Ge{sub y}Si{sub 0.9965-y}){sub 1.8} samples with high Ge concentration of y = 0.025 and 0.035, because of reduced power factor. In addition, a two-band model was employed to show that the hole contribution to the thermal conductivity dominates the bipolar and electron contributions for all samples from 300 to 823 K and accounts for about 12% of the total thermal conductivity at about 800 K.

Effects of (Al,Ge) double doping on the thermoelectric properties of higher manganese silicides

International Nuclear Information System (INIS)

Chen, Xi; Salta, Daniel; Zhang, Libin; Weathers, Annie; Zhou, Jianshi; Goodenough, John B.; Shi, Li

2013-01-01

Experiments and analysis have been carried out to investigate the effects of Al and (Al,Ge) doping on the microstructure and thermoelectric properties of polycrystalline higher manganese silicide (HMS) samples, which were prepared by solid-state reaction, ball milling, and followed by spark plasma sintering. It has been found that Al doping effectively increases the hole concentration, which leads to an increase in the electrical conductivity and power factor. By introducing the second dopant Ge into Al-doped HMS, the electrical conductivity is increased, and the Seebeck coefficient is decreased as a result of further increased hole concentration. The peak power factor is found to occur at a hole concentration between 1.8 × 10 21 and 2.2 × 10 21  cm −3 measured at room temperature. The (Al,Ge)-doped HMS samples show lower power factors owing to their higher hole concentrations. The mobility of Mn(Al 0.0035 Ge y Si 0.9965-y ) 1.8 with y = 0.035 varies approximately as T −3/2 above 200 K, suggesting acoustic phonon scattering is the dominant scattering mechanism. The thermal conductivity of HMS does not change appreciably by Al or (Al,Ge) doping. The maximum ZT of (Al,Ge)-doped HMS is 0.57 at 823 K, which is similar to the highest value found in the Al-doped HMS samples. The ZT values were reduced in the Mn(Al 0.0035 Ge y Si 0.9965-y ) 1.8 samples with high Ge concentration of y = 0.025 and 0.035, because of reduced power factor. In addition, a two-band model was employed to show that the hole contribution to the thermal conductivity dominates the bipolar and electron contributions for all samples from 300 to 823 K and accounts for about 12% of the total thermal conductivity at about 800 K

Corrosion resistant surface for vanadium nitride and hafnium nitride layers as function of grain size

Science.gov (United States)

Escobar, C. A.; Caicedo, J. C.; Aperador, W.

2014-01-01

In this research it was studied vanadium nitride (VN) and hafnium nitride (HfN) film, which were deposited onto silicon (Si (100)) and AISI 4140 steel substrates via r.f. magnetron sputtering technique in Ar/N2 atmosphere with purity at 99.99% for both V and Hf metallic targets. Both films were approximately 1.2±0.1 μm thick. The crystallography structures that were evaluated via X-ray diffraction analysis (XRD) showed preferential orientations in the Bragg planes VN (200) and HfN (111). The chemical compositions for both films were characterized by EDX. Atomic Force Microscopy (AFM) was used to study the morphology; the results reveal grain sizes of 78±2 nm for VN and 58±2 nm for HfN and roughness values of 4.2±0.1 nm for VN and 1.5±0.1 nm for HfN films. The electrochemical performance in VN and HfN films deposited onto steel 4140 were studied by Tafel polarization curves and impedance spectroscopy methods (EIS) under contact with sodium chloride at 3.5 wt% solution, therefore, it was found that the corrosion rate decreased about 95% in VN and 99% for HfN films in relation to uncoated 4140 steel, thus demonstrating, the protecting effect of VN and HfN films under a corrosive environment as function of morphological characteristics (grain size). VN(grain size)=78±2.0 nm, VN(roughness)=4.2±0.1 nm, VN(corrosion rate)=40.87 μmy. HfN(grain size)=58±2.0 nm, HfN(roughness)=1.5±0.1 nm, HfN(corrosion rate)=0.205 μmy. It was possible to analyze that films with larger grain size, can be observed smaller grain boundary thus generating a higher corrosion rate, therefore, in this work it was found that the HfN layer has better corrosion resistance (low corrosion rate) in relation to VN film which presents a larger grain size, indicating that the low grain boundary in (VN films) does not restrict movement of the Cl- ion and in this way the corrosion rate increases dramatically.

A SEED OF SOLAR FORSTERITE AND POSSIBLE NEW EVOLUTIONAL SCENARIO OF COSMIC SILICATES

International Nuclear Information System (INIS)

Kimura, Yuki; Nuth, Joseph A.

2009-01-01

Laboratory experiments suggest that magnesium silicide (Mg 2 Si) grains could be produced in the hydrogen dominant gas outflow from evolved stars in addition to amorphous oxide minerals. If the magnesium silicide grains were incorporated into the primitive solar nebula, the magnesium silicide would easily become forsterite (Mg 2 SiO 4 ) by oxidation as it reacted with the relatively oxygen-rich, solar composition gas. This hypothesis can explain the existence of abundant forsterite grains with solar oxygen composition in meteorites, i.e., magnesium silicide could be the precursor of much of the forsterite found in our solar system. In addition, if a significant fraction of the solar forsterite is derived from magnesium silicide, it could explain the apparent low abundance of presolar forsterite. Furthermore, the lower degree of crystallinity observed in silicates formed in outflows of lower mass-loss-rate stars might be caused by the formation of magnesium silicide in this relatively hydrogen-rich environment.

Ion-beam mixed ultra-thin cobalt suicide (CoSi2) films by cobalt sputtering and rapid thermal annealing

Science.gov (United States)

Kal, S.; Kasko, I.; Ryssel, H.

1995-10-01

The influence of ion-beam mixing on ultra-thin cobalt silicide (CoSi2) formation was investigated by characterizing the ion-beam mixed and unmixed CoSi2 films. A Ge+ ion-implantation through the Co film prior to silicidation causes an interface mixing of the cobalt film with the silicon substrate and results in improved silicide-to-silicon interface roughness. Rapid thermal annealing was used to form Ge+ ion mixed and unmixed thin CoSi2 layer from 10 nm sputter deposited Co film. The silicide films were characterized by secondary neutral mass spectroscopy, x-ray diffraction, tunneling electron microscopy (TEM), Rutherford backscattering, and sheet resistance measurements. The experi-mental results indicate that the final rapid thermal annealing temperature should not exceed 800°C for thin (micrographs of the ion-beam mixed and unmixed CoSi2 films reveals that Ge+ ion mixing (45 keV, 1 × 1015 cm-2) produces homogeneous silicide with smooth silicide-to-silicon interface.

Dysprosium disilicide nanostructures on silicon(001) studied by scanning tunneling microscopy and transmission electron microscopy

International Nuclear Information System (INIS)

Ye Gangfeng; Nogami, Jun; Crimp, Martin A.

2006-01-01

The microstructure of self-assembled dysprosium silicide nanostructures on silicon(001) has been studied by scanning tunneling microscopy and transmission electron microscopy. The studies focused on nanostructures that involve multiple atomic layers of the silicide. Cross-sectional high resolution transmission electron microscopy images and fast Fourier transform analysis showed that both hexagonal and orthorhombic/tetragonal silicide phases were present. Both the magnitude and the anisotropy of lattice mismatch between the silicide and the substrate play roles in the morphology and epitaxial growth of the nanostructures formed

Newly synthesized MgAl2Ge2: A first-principles comparison with its silicide and carbide counterparts

Science.gov (United States)

Tanveer Karim, A. M. M.; Hadi, M. A.; Alam, M. A.; Parvin, F.; Naqib, S. H.; Islam, A. K. M. A.

2018-06-01

Using plane-wave pseudopotential density functional theory (DFT), the first-principle calculations are performed to investigate the structural aspects, mechanical behaviors and electronic features of the newly synthesized CaAl2Si2-prototype intermetallic compound, MgAl2Ge2 for the first time and the results are compared with those calculated for its silicide and carbide counterparts MgAl2Si2 and MgAl2C2. The calculated lattice constants agree fairly well with their corresponding experimental values. The estimated elastic tensors satisfy the mechanical stability conditions for MgAl2Ge2 along with MgAl2Si2 and MgAl2C2. The level of elastic anisotropy increases following the sequence of X-elements Ge → Si → C. MgAl2Ge2 and MgAl2Si2 are expected to be ductile and damage tolerant, while MgAl2C2 is a brittle one. MgAl2Ge2 and MgAl2Si2 should exhibit better thermal shock resistance and low thermal conductivity and accordingly these can be used as thermal barrier coating (TBC) materials. The Debye temperature of MgAl2Ge2 is lowest among three intermetallic compounds. MgAl2Ge2 and MgAl2Si2 should exhibit metallic conductivity; while the dual characters of weak-metals and semiconductors are expected for MgAl2C2. The values of theoretical Vickers hardness for MgAl2Ge2, MgAl2Si2, and MgAl2C2 are 3.3, 2.7, and 7.7 GPa, respectively, indicating that these three intermetallics are soft and easily machinable.

Technical Note: A simulation study on the feasibility of radiotherapy dose enhancement with calcium tungstate and hafnium oxide nano- and microparticles.

Science.gov (United States)

Sherck, Nicholas J; Won, You-Yeon

2017-12-01

To assess the radiotherapy dose enhancement (RDE) potential of calcium tungstate (CaWO 4 ) and hafnium oxide (HfO 2 ) nano- and microparticles (NPs). A Monte Carlo simulation study was conducted to gauge their respective RDE potentials relative to that of the broadly studied gold (Au) NP. The study was warranted due to the promising clinical and preclinical studies involving both CaWO 4 and HfO 2 NPs as RDE agents in the treatment of various types of cancers. The study provides a baseline RDE to which future experimental RDE trends can be compared to. All three materials were investigated in silico with the software Penetration and Energy Loss of Positrons and Electrons (PENELOPE 2014) developed by Francesc Salvat and distributed in the United States by the Radiation Safety Information Computational Center (RSICC) at Oak Ridge National Laboratory. The work utilizes the extensively studied Au NP as the "gold standard" for a baseline. The key metric used in the evaluation of the materials was the local dose enhancement factor (DEF loc ). An additional metric used, termed the relative enhancement ratio (RER), evaluates material performance at the same mass concentrations. The results of the study indicate that Au has the strongest RDE potential using the DEF loc metric. HfO 2 and CaWO 4 both underperformed relative to Au with lower DEF loc of 2-3 × and 4-100 ×, respectively. The computational investigation predicts the RDE performance ranking to be: Au > HfO 2 > CaWO 4 . © 2017 American Association of Physicists in Medicine.

Effect of Advanced Plasma Source bias voltage on properties of HfO2 films prepared by plasma ion assisted electron evaporation from metal hafnium

International Nuclear Information System (INIS)

Zhu, Meiping; Yi, Kui; Arhilger, Detlef; Qi, Hongji; Shao, Jianda

2013-01-01

HfO 2 films, using metal hafnium as starting material, are deposited by plasma-ion assisted electron evaporation with different Advanced Plasma Source (APS) bias voltages. The refractive index and extinction coefficient are calculated, the chemical state and composition, as well as the stress and aging behavior is investigated. Laser induced damage threshold (LIDT) and damage mechanism are also evaluated and discussed. Optical, structural, mechanical and laser induced damage properties of HfO 2 films are found to be sensitive to APS bias voltage. The film stress can be tuned by varying the APS bias voltage. Damage morphologies indicate the LIDT of the HfO 2 films at 1064 nm and 532 nm are dominated by the nodular-defect density in coatings, while the 355 nm LIDT is dominated by the film absorption. HfO 2 films with higher 1064 nm LIDT than samples evaporated from hafnia are achieved with bias voltage of 100 V. - Highlights: • HfO 2 films are evaporated with different Advanced Plasma Source (APS) bias voltages. • Properties of HfO 2 films are sensitive to APS bias voltage. • With a bias voltage of 100 V, HfO 2 coatings without any stress can be achieved. • Higher 1064 nm laser induced damage threshold is achieved at a bias voltage of 100 V

Properties of ion implanted epitaxial CoSi2/Si(1 0 0) after rapid thermal oxidation

International Nuclear Information System (INIS)

Zhao, Q.T.; Kluth, P.; Xu, J.; Kappius, L.; Zastrow, U.; Wang, Z.L.; Mantl, S.

2000-01-01

Epitaxial CoSi 2 layers were grown on Si(1 0 0) using molecular beam allotaxy. Boron ion implantations and rapid thermal oxidation (RTO) were performed. During oxidation, SiO 2 formed on the surface of the CoSi 2 layers, and the silicides was pushed into the substrate. The diffusion of boron was slightly retarded during oxidation for the specimen with a 20 nm epitaxial CoSi 2 capping layer as compared to the specimen without CoSi 2 capping layer. The electrical measurements showed that the silicide has good Schottky contacts with the boron doped silicon layer after RTO. A nanometer silicide patterning process, based on local oxidation of silicide (LOCOSI) layer, was also investigated. It shows two back-to-back Schottky diodes between the two separated parts of the silicide

The role of intermetallic precipitates in Ti-62222S

Energy Technology Data Exchange (ETDEWEB)

Evans, D J [US Air Force Mater. Directorate Wright Lab., Wright Patterson AFB, OH (United States); Broderick, T F [US Air Force Mater. Directorate Wright Lab., Wright Patterson AFB, OH (United States); Woodhouse, J B [UES Inc, Dayton, OH (United States); Hoenigman, J R [Wright State Univ., Dayton, OH (United States). Research Inst.

1996-08-15

Samples of Ti-62222-0.23wt.%Si were heat treated and aged at temperatures ranging from 1150 F to 1500 F with the view of effecting selective precipitation of {alpha}{sub 2} precipitates and silicides (i.e. Ti{sub x}Zr{sub 5-x}Si{sub 3}). The effect of these intermetallic precipitates on the mechanical properties and fracture morphology was assessed via three separate microstructural conditions: Ti-62222S with {alpha}{sub 2} precipitates, Ti-62222S with {alpha}{sub 2} and silicide precipitates, and Ti-62222S with silicide precipitates. Both types of intermetallic precipitate appear to lower the fracture toughness, however {alpha}{sub 2} promotes intergranular fracture while silicides lead to transgranular failure and dimpling. The combined presence of the {alpha}{sub 2} and silicides leads to mixed mode failure. Further, since {alpha}{sub 2} is present in the {alpha} phase and silicides precipitate out in the {beta} phase, it appears that the effect of each of these intermetallics in Ti-62222S is additive rather than synergistic. (orig.)

Sensitivity analysis of power excursion in RSG-GAS reactor due to reactivity insertion

International Nuclear Information System (INIS)

Pinem, Surian; Sembiring, Tagor Malem

2002-01-01

Reactor kinetics has a very important role in reactor operation safety and nuclear reactor control. One of the important aspects in reactor kinetics is power behavior as function of time due to chain reaction in the core. The calculation was performed using kinetic equation and feedback reactivity and evaluated using static power coefficient. Analysis was performed for oxide 250 g, silicide 250 g and silicide 300 g fuel elements with insertion of positive reactivity, negative reactivity and reactivity close to delay neutron fraction. The calculation of power excursion sensitivity showed that the insertion of 0,5 % Δk/k, in the fuel element of silicide 300 g is bigger 5 % than the one of oxide 250 g or silicide 250 g. If inserted by - 1,2 % Δk/k, there is no change among three fuel elements. Therefore, in kinetic point of view, it is showed there is no significant influence in the RSG-GAS reactor operation safety is the current core of oxide 250 g is converted to silicide 250 g or to silicide 300 g

Impedance Characterization of the Capacitive field-Effect pH-Sensor Based on a thin-Layer Hafnium Oxide Formed by Atomic Layer Deposition

Directory of Open Access Journals (Sweden)

Michael LEE

2014-05-01

Full Text Available As a sensing element, silicon dioxide (SiO2 has been applied within ion-sensitive field effect transistors (ISFET. However, a requirement of increasing pH-sensitivity and stability has observed an increased number of insulating materials that obtain high-k gate being applied as FETs. The increased high-k gate reduces the required metal oxide layer and, thus, the fabrication of thin hafnium oxide (HfO2 layers by atomic layer deposition (ALD has grown with interest in recent years. This metal oxide presents advantageous characteristics that can be beneficial for the advancements within miniaturization of complementary metal oxide semiconductor (CMOS technology. In this article, we describe a process for fabrication of HfO2 based on ALD by applying water (H2O as the oxygen precursor. As a first, electrochemical impedance spectroscopy (EIS measurements were performed with varying pH (2-10 to demonstrate the sensitivity of HfO2 as a potential pH sensing material. The Nyquist plot demonstrates a high clear shift of the polarization resistance (Rp between pH 6-10 (R2 = 0.9986, Y = 3,054X + 12,100. At acidic conditions (between pH 2-10, the Rp change was small due to the unmodified oxide gate (R2 = 0.9655, Y = 2,104X + 4,250. These preliminary results demonstrate the HfO2 substrate functioned within basic to neutral conditions and establishes a great potential for applying HfO2 as a dielectric material for future pH measuring FET sensors.

A silicon doped hafnium oxide ferroelectric p–n–p–n SOI tunneling field–effect transistor with steep subthreshold slope and high switching state current ratio

Directory of Open Access Journals (Sweden)

Saeid Marjani

2016-09-01

Full Text Available In this paper, a silicon–on–insulator (SOI p–n–p–n tunneling field–effect transistor (TFET with a silicon doped hafnium oxide (Si:HfO2 ferroelectric gate stack is proposed and investigated via 2D device simulation with a calibrated nonlocal band–to–band tunneling model. Utilization of Si:HfO2 instead of conventional perovskite ferroelectrics such as lead zirconium titanate (PbZrTiO3 and strontium bismuth tantalate (SrBi2Ta2O9 provides compatibility to the CMOS process as well as improved device scalability. By using Si:HfO2 ferroelectric gate stack, the applied gate voltage is effectively amplified that causes increased electric field at the tunneling junction and reduced tunneling barrier width. Compared with the conventional p–n–p–n SOI TFET, the on–state current and switching state current ratio are appreciably increased; and the average subthreshold slope (SS is effectively reduced. The simulation results of Si:HfO2 ferroelectric p–n–p–n SOI TFET show significant improvement in transconductance (∼9.8X enhancement at high overdrive voltage and average subthreshold slope (∼35% enhancement over nine decades of drain current at room temperature, indicating that this device is a promising candidate to strengthen the performance of p–n–p–n and conventional TFET for a switching performance.

Synergistic effect of carbon nanotube as sintering aid and toughening agent in spark plasma sintered molybdenum disilicide-hafnium carbide composite

Energy Technology Data Exchange (ETDEWEB)

Mukherjee, Biswajyoti; Asiq Rahman, O.S.; Sribalaji, M [Materials Science and Engineering, Indian Institute of Technology Patna, Bihta Kanpa Road, Bihta, Patna, Bihar 801103 (India); Bakshi, Srinivasa Rao [Department of Metallurgical and Materials Engineering, Indian Institute of Technology Madras, Chennai 600036 (India); Keshri, Anup Kumar, E-mail: anup@iitp.ac.in [Materials Science and Engineering, Indian Institute of Technology Patna, Bihta Kanpa Road, Bihta, Patna, Bihar 801103 (India)

2016-12-15

Hafnium carbide (HfC) along with sintering aids was consolidated at a relatively lower temperature i.e. 1600 °C (i.e. T=~0.41 T{sub m}) under a uniaxial load of 50 MPa by spark plasma sintering. Two different sintering aids such as molybdenum disilicide (MoSi{sub 2}) and carbon nanotube (CNT) were added to enhance the densification and lower the extent of grain growth in the sintered pellets. Density of the sintered pellet increased from 96.0±0.8% in HfC +5 wt% MoSi{sub 2} (HM) to 99.0±0.5% with the addition of 2 wt% CNT in HfC+5 wt% MoSi{sub 2} (HMC) at sintering temperature of 1600 °C. Further, the extent of grain growth drastically reduced from 204% in HM to 50% in HMC. Analysis of linear shrinkage during densification revealed that CNT addition increased densification rate and decreased the time required to reach the density of 99.0±0.5% at 1600 °C. Increased densification and lower degree of grain growth could be due to the synergistic effect offered by the CNT, which are as follows: (i) Lubrication effect of CNT, (ii) Lower activation energy for grain boundary diffusion (iii) Reduction in liquid phase sintering temperature and (iv) Grain boundary pinning. Fracture toughness of the sintered HM and HMC composite was obtained using indentation technique. By the addition of 2 wt% CNT in HM, drastic increase of 91% in fracture toughness was seen. This significant improvement in fracture toughness was due to the enhanced densification and relatively lower grain size of HMC. Also crack bridging, crack deflection, crack arrest, CNT and graphene sheet pull-out and swording played major role in toughening of HMC pellet.

X-ray tube targets

International Nuclear Information System (INIS)

Hirsch, H.H.

1980-01-01

In rotary targets for X-ray tubes warping is a problem which causes X-ray deficiency. A rotary target is described in which warping is reduced by using alloys of molybdenum with 0.05 to 10% iron, silicon, cobalt, tantalum, niobium, hafnium, stable metal oxide or mixture thereof. Suitable mixtures are 0.5 to 10% of tantalum, niobium or hafnium with from 0.5 to 5% yttrium oxide, or 0.05 to 0.3% of cobalt or silicon. Optionally 0.1 to 5% by weight of additional material may be alloyed with the molybdenum, such as tantalum or hafnium carbides. (author)

Eutectics Me5Si3-MeSi2 in a triple system Mo-W-Si

International Nuclear Information System (INIS)

Gnesin, B.A.; Gurjiyants, P.A.; Borisenko, E.B.

2001-01-01

Refractory metals silicides high-melting point eutectics are of great interest for different high temperature applications: production of composite materials with silicon carbide skeleton, antioxidant protective coatings on carbon materials, brazing of carbon, silicon carbide and refractory metals alloys materials. Phase diagrams Mo-Si and W-Si are compared: diagrams are similar but not in all significant details. Number of possible crystal structures for molybdenum silicides is at least twice more, than for tungsten and this difference is manifested distinctly for composite samples with different W-Mo ratio air high-temperature tests. In tests of new silicon carbide-refractory metal silicides composites materials (REFSIC) with 10-20 seconds heating time up to 1700 o C and 20-40 seconds time of cooling silicides with molybdenum prevalence were not so steady as tungsten based silicides. Experimental data concerning eutectic temperature dependence on W-Mo ratio, X-ray diffraction data, scanning electron and optical microscopy structure investigations results and some properties are discussed. (author)

40 CFR 421.332 - Effluent limitations guidelines representing the degree of effluent reduction attainable by the...

Science.gov (United States)

2010-07-01

... times. (d) SiCl4 purification wet air pollution control. BPT Limitations for the Primary Zirconium and...) Sand drying wet air pollution control. BPT Limitations for the Primary Zirconium and Hafnium... chlorination off-gas wet air pollution control. BPT Limitations for the Primary Zirconium and Hafnium...

Infrared sensors and sensor fusion; Proceedings of the Meeting, Orlando, FL, May 19-21, 1987

International Nuclear Information System (INIS)

Buser, R.G.; Warren, F.B.

1987-01-01

The present conference discusses topics in the fields of IR sensor multifunctional design; image modeling, simulation, and detection; IR sensor configurations and components; thermal sensor arrays; silicide-based IR sensors; and IR focal plane array utilization. Attention is given to the fusion of lidar and FLIR for target segmentation and enhancement, the synergetic integration of thermal and visual images for computer vision, the 'Falcon Eye' FLIR system, multifunctional electrooptics and multiaperture sensors for precision-guided munitions, and AI approaches to data integration. Also discussed are the comparative performance of Ir silicide and Pt silicide photodiodes, high fill-factor silicide monolithic arrays, and the characterization of noise in staring IR focal plane arrays

The Dy–Ni–Si system as a representative of the rare earth–Ni–Si family: Its isothermal section and new rare-earth nickel silicides

Energy Technology Data Exchange (ETDEWEB)

Yuan, Fang; Mozharivskyj, Y. [Department of Chemistry and Chemical Biology, McMaster University, 1280 Main Street West, Hamilton, Ontario, Canada L8S 4M1 (Canada); Morozkin, A.V., E-mail: morozkin@general.chem.msu.ru [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, Moscow GSP-2, 119992 (Russian Federation); Knotko, A.V. [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, Moscow GSP-2, 119992 (Russian Federation); Yapaskurt, V.O. [Department of Petrology, Geological Faculty, Moscow State University, Leninskie Gory, Moscow 119992 (Russian Federation); Pani, M.; Provino, A.; Manfrinetti, P. [Institute SPIN-CNR and Dipartimento di Chimica e Chimica Industriale, Università di Genova, Via Dodecaneso 31, 16146 Genova (Italy)

2014-11-15

}Si{sub 24}, ∼Dy{sub 16}Ni{sub 62}Si{sub 22}, DyNi{sub 7}Si{sub 6}, Dy{sub 3}Ni{sub 8}Si, DyNi{sub 2}Si, ∼Dy{sub 40}Ni{sub 47}Si{sub 13} and ∼Dy{sub 5}Ni{sub 2}Si{sub 3}. Quasi–binary solid solutions were detected for Dy{sub 2}Ni{sub 17}, DyNi{sub 5}, DyNi{sub 7}, DyNi{sub 3}, DyNi{sub 2}, DyNi, DySi{sub 2} and DySi{sub 1.67}. The crystal structures and magnetic properties of new phases RNi{sub 7}Si{sub 6} (GdNi{sub 7}Si{sub 6}-type), R{sub 3}Ni{sub 8}Si (Ce{sub 3}Co{sub 8}Si-type), RNi{sub 2}Si (YPd{sub 2}Si-type) and R{sub 3}Ni{sub 12}Si{sub 4} (Gd{sub 3}Ru{sub 4}Al{sub 12}-type), with R=Y, Gd–Tm, are also reported. - Highlights: • Dy–Ni–Si isothermal section was obtained at 870 K/1070 K. • Twelve known ternary dysprosium nickel silicides were confirmed in Dy–Ni–Si. • Nine new dysprosium nickel silicides were detected in Dy–Ni–Si. • Seventeen new rare earth nickel silicides were detected in (Y, Gd–Tm)–Ni–Si. • Tb{sub 3}Ni{sub 8}Si, Dy{sub 3}Ni{sub 8}Si, Ho{sub 3}Ni{sub 12}Si{sub 4} and DyNi{sub 2}Si show ferromagnetic-like ordering.

Electrochemical-metallothermic reduction of zirconium in molten salt solutions

International Nuclear Information System (INIS)

McLaughlin, D.F.; Talko, F.

1990-01-01

This patent describes a method for separating hafnium from zirconium of the type wherein a feed containing zirconium and hafnium chlorides is prepared from zirconium-hafnium chloride and the feed is introduced into a distillation column, which distillation column has a reboiler connected at the bottom and a reflux condenser connected at the top and wherein a hafnium chloride enriched stream is taken from the top of the column and a zirconium enriched chloride stream is taken from the bottom of the column. It comprises: reducing the zirconium enriched chloride stream taken from the distillation column to metal by electrochemically reducing an alkaline earth metal in a molten salt bath with the molten salt in the molten salt bath consisting essentially of a mixture of at least one alkali metal chloride and at least one alkaline earth metal chloride and zirconium chloride, with the reduced alkaline earth metal reacting with the zirconium chloride to produce zirconium metal and alkaline earth metal chloride

Analysis of quadrupole splitting of multiple Fe sites intermixed in Si(111) with Mössbauer spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Kawauchi, Taizo, E-mail: kawauchi@iis.u-tokyo.ac.jp [Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Zhang, Xiaowei [Institute of Materials Structure Science, High Energy Accelerator Research Organization, 1-1, Oho, Tsukuba, Ibaraki 305-0801 (Japan); Fukutani, Katsuyuki [Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

2016-12-01

The iron silicide has various interesting phases both fundamentally and technologically, which have acquired much attention to date. Iron silicides are often fabricated on a Si substrate by a solid phase epitaxy method, and the initial stage of intermixing of iron atoms with substrate Si is of crucial importance for silicide fabrication, which remains to be clarified. Here, we have investigated the initial stage of the iron-silicide formation before crystallization with Mössbauer spectroscopy suited to characterization of magnetic and chemical properties of {sup 57}Fe atoms in materials. The sample was prepared by deposition of {sup 57}Fe of 1 nm on a Si(111) surface at 450 K. Conventional Mössbauer spectroscopy in the energy domain revealed presence of two iron sites with similar quadrupole splits and isomer shifts, which hampered complete analysis of this system. By combining the time-domain spectroscopy using polarized synchrotron radiation, we have separately analyzed the quadrupole splits and isomer shifts for the two iron sites. By using the theoretical simulation, furthermore, we successfully reproduced the experimentally observed time spectrum of the nuclear resonant scattering on the assumption that iron atoms randomly occupy the substitutional sites for Si at the initial stage of intermixing before crystallization of an iron silicide. - Highlights: • Quadrupole split of Fe in an iron silicide is measured by Mossbauer spectroscopy. • Two components are separately analyzed with time- and energy-domain spectra. • The time spectrum is well reproduced by numerical simulation. • Results indicate that Fe atoms randomly occupy two possible sites in Fe silicide.

Determination of hafnium at the 10−4% level (relative to zirconium content) using neutron activation analysis, inductively coupled plasma mass spectrometry and inductively coupled plasma atomic emission spectrometry

International Nuclear Information System (INIS)

Smolik, Marek; Polkowska-Motrenko, Halina; Hubicki, Zbigniew; Jakóbik-Kolon, Agata; Danko, Bożena

2014-01-01

Graphical abstract: -- Highlights: •We worked out ICP-MS method of Hf determination in Zr and Zr compounds. •We used NAA method as reference one. •We obtained pure zirconium matrix by ion exchange (Diphonix ® resin). •These permit to determine ≥1 × 10 −4 % Hf in Zr sample by ICP MS with good precision and accuracy. -- Abstract: Hafnium at the very low level of 1–8 ppm (in relation to zirconium) was determined in zirconium sulfate solutions (originating from investigations of the separation of ca. 44 ppm Hf from zirconium by means of the ion exchange method) by using three independent methods: inductively coupled plasma mass spectrometry (ICP MS), neutron activation analysis (NAA) and inductively coupled plasma atomic emission spectrometry (ICP-AES). The results of NAA and ICP MS determinations were consistent with each other across the entire investigated range (the RSD of both methods did not exceed 38%). The results of ICP-AES determination were more diverse, particularly at less than 5 ppm Hf (RSD was significantly higher: 29–253%). The ion exchange method exploiting Diphonix ® resin proved sufficient efficiency in Zr–Hf separation when the initial concentration ratio of the elements ([Zr] 0 /[Hf] 0 ) ranged from 1200 to ca. 143,000

PtSi Clustering in Silicon Probed by Transport Spectroscopy

Directory of Open Access Journals (Sweden)

Massimo Mongillo

2013-12-01

Full Text Available Metal silicides formed by means of thermal annealing processes are employed as contact materials in microelectronics. Control of the structure of silicide/silicon interfaces becomes a critical issue when the characteristic size of the device is reduced below a few tens of nanometers. Here, we report on silicide clustering occurring within the channel of PtSi/Si/PtSi Schottky-barrier transistors. This phenomenon is investigated through atomistic simulations and low-temperature resonant-tunneling spectroscopy. Our results provide evidence for the segregation of a PtSi cluster with a diameter of a few nanometers from the silicide contact. The cluster acts as a metallic quantum dot giving rise to distinct signatures of quantum transport through its discrete energy states.