Distribution of impurity elements in slag-silicon equilibria for oxidative refining of metallurgical silicon for solar cell applications

Energy Technology Data Exchange (ETDEWEB)

Johnston, M.D.; Barati, M. [Department of Materials Science and Engineering, The University of Toronto, 184 College Street, Toronto, Ont. (Canada)

2010-12-15

The possibility of refining metallurgical grade silicon to a high-purity product for solar cell applications by the slagging of impurity elements was investigated. Distribution coefficients were determined for B, Ca, Mg, Fe, K and P between magnesia or alumina saturated Al{sub 2}O{sub 3}-CaO-MgO-SiO{sub 2} and Al{sub 2}O{sub 3}-BaO-SiO{sub 2} slags and silicon at 1500 C. The partitioning of the impurity elements between molten silicon and slag was examined in terms of basicity and oxygen potential of the slag, with particular focus on the behaviour of boron and phosphorus. The experimental results showed that both of these aspects of slag chemistry have a significant influence on the distribution coefficient of B and P. Increasing the oxygen potential by additions of silica was found to increase the distribution coefficients for both B and P. Increasing the basicity of the slag was not always effective in achieving high removal of these elements from silicon as excess amounts of basic oxides lower the activity of silica and consequently the oxygen potential. The extent of this effect is such that increasing basicity can lead to a decrease in distribution coefficient. Increasing lime in the slag increased distribution coefficients for B and P, but this counterbalancing effect was such that distributions were the lowest in barium-containing slags, despite barium oxide being the most basic of the fluxes used in this study. The highest removal efficiencies achieved were of the order of 80% and 90% for B and P, respectively. It was demonstrated that for the removal of B and P from metallurgical-grade silicon to solar-grade levels, a slag mass about 5 times the mass of silicon would be required. (author)

Performance Analysis of a Grid-Connected Upgraded Metallurgical Grade Silicon Photovoltaic System

Directory of Open Access Journals (Sweden)

Chao Huang

2016-05-01

Full Text Available Because of their low cost, photovoltaic (PV cells made from upgraded metallurgical grade silicon (UMG-Si are a promising alternative to conventional solar grade silicon-based PV cells. This study investigates the outdoor performance of a 1.26 kW grid-connected UMG-Si PV system over five years, reporting the energy yields and performance ratio and estimating the long-term performance degradation rate. To make this investigation more meaningful, the performance of a mono-Si PV system installed at the same place and studied during the same period of time is presented for reference. Furthermore, this study systematizes and rationalizes the necessity of a data selection and filtering process to improve the accuracy of degradation rate estimation. The impact of plane-of-array irradiation threshold for data filtering on performance ratio and degradation rate is also studied. The UMG-Si PV system’s monthly performance ratio after data filtering ranged from 84% to 93% over the observation period. The annual degradation rate was 0.44% derived from time series of monthly performance ratio using the classical decomposition method. A comparison of performance ratio and degradation rate to conventional crystalline silicon-based PV systems suggests that performance of the UMG-Si PV system is comparable to that of conventional systems.

Development of processes for the production of solar grade silicon from halides and alkali metals

Science.gov (United States)

Dickson, C. R.; Gould, R. K.

1980-01-01

High temperature reactions of silicon halides with alkali metals for the production of solar grade silicon in volume at low cost were studied. Experiments were performed to evaluate product separation and collection processes, measure heat release parameters for scaling purposes, determine the effects of reactants and/or products on materials of reactor construction, and make preliminary engineering and economic analyses of a scaled-up process.

Gettering improvements of minority-carrier lifetimesin solar grade silicon

DEFF Research Database (Denmark)

Osinniy, Viktor; Nylandsted Larsen, Arne; Dahl, Espen

2012-01-01

The minority-carrier lifetime in p-type solar-grade silicon (SoG-Si) produced by Elkem Solar was investigated after different types of heat treatment. Two groups of samples differing by the as-grown lifetimes were exposed to internal and phosphorus gettering using constant and variable temperature...... processes. Optimal heat-treatment parameters for each group of samples were then identified which improved the minority-carrier lifetimes to values higher than the minimum value needed for solar cells. Phosphorus gettering using a variable temperature process enhanced in particular the lifetime within each...

INTRAVASAL INJECTION OF FORMED-IN-PLACE MEDICAL GRADE SILICONE-RUBBER FOR VAS OCCLUSION

NARCIS (Netherlands)

SOEBADI, DM; GARDJITO, W; MENSINK, HJA

This paper describes two consecutive studies: a volume study and an efficacy study. The volume study determined the appropriate volume of Medical Grade Silicone Rubber (MSR) needed to achieve complete occlusion of the vas deferens. This was done by in-vitro testing of 130 human vas specimens

Extraordinary Light-Trapping Enhancement in Silicon Solar Cell Patterned with Graded Photonic Super-Crystals

Directory of Open Access Journals (Sweden)

Safaa Hassan

2017-12-01

Full Text Available Light-trapping enhancement in newly discovered graded photonic super-crystals (GPSCs with dual periodicity and dual basis is herein explored for the first time. Broadband, wide-incident-angle, and polarization-independent light-trapping enhancement was achieved in silicon solar cells patterned with these GPSCs. These super-crystals were designed by multi-beam interference, rendering them flexible and efficient. The optical response of the patterned silicon solar cell retained Bloch-mode resonance; however, light absorption was greatly enhanced in broadband wavelengths due to the graded, complex unit super-cell nanostructures, leading to the overlap of Bloch-mode resonances. The broadband, wide-angle light coupling and trapping enhancement mechanism are understood to be due to the spatial variance of the index of refraction, and this spatial variance is due to the varying filling fraction, the dual basis, and the varying lattice constants in different directions.

Resonant Raman scattering in ion-beam-synthesized Mg2Si in a silicon matrix

International Nuclear Information System (INIS)

Baleva, M.; Zlateva, G.; Atanassov, A.; Abrashev, M.; Goranova, E.

2005-01-01

Resonant Raman scattering by ion beam synthesized in silicon matrix Mg 2 Si phase is studied. The samples are prepared with the implantation of 24 Mg + ions with dose 4x10 17 cm -2 and with two different energies 40 and 60 keV into (100)Si substrates. The far infrared spectra are used as criteria for the formation of the Mg 2 Si phase. The Raman spectra are excited with different lines of Ar + laser, with energies of the lines lying in the interval from 2.40 to 2.75 eV. The resonant scattering can be investigated using these laser lines, as far as according to the Mg 2 Si band structure, there are direct gaps with energies in the same region. The energy dependences of the scattered intensities in the case of the scattering by the allowed F 2g and the forbidden LO-type modes are experimentally obtained and theoretically interpreted. On the base of the investigation energies of the interband transitions in the Mg 2 Si are determined. It is found also that the resonant Raman scattering appears to be a powerful tool for characterization of a material with inclusions in it. In the particular case it is concluded that the Mg 2 Si phase is present in the form of a surface layer in the sample, prepared with implantation energy 40 keV and as low-dimensional precipitates, embedded in the silicon matrix, in the sample, prepared with the higher implantation energy

Resistivity measurements on the neutron irradiated detector grade silicon materials

Energy Technology Data Exchange (ETDEWEB)

Li, Zheng

1993-11-01

Resistivity measurements under the condition of no or low electrical field (electrical neutral bulk or ENB condition) have been made on various device configurations on detector grade silicon materials after neutron irradiation. Results of the measurements have shown that the ENB resistivity increases with neutron fluence ({Phi}{sub n}) at low {phi}{sub n} (<10{sup 13} n/cm{sup 2}) and saturates at a value between 300 and 400 k{Omega}-cm at {phi}{sub n} {approximately}10{sup 13} n/cm{sup 2}. Meanwhile, the effective doping concentration N{sub eff} in the space charge region (SCR) obtained from the C-V measurements of fully depleted p{sup +}/n silicon junction detectors has been found to increase nearly linearly with {phi}{sub n} at high fluences ({phi}{sub n} > 10{sup 13} n/cm{sup 2}). The experimental results are explained by the deep levels crossing the Fermi level in the SCR and near perfect compensation in the ENB by all deep levels, resulting in N{sub eff} (SCR) {ne} n or p (free carrier concentrations in the ENB).

Phosphorus Diffusion Gettering Efficacy in Upgraded Metallurgical-Grade Solar Silicon

Science.gov (United States)

Jiménez, A.; del Cañizo, C.; Cid, C.; Peral, A.

2018-05-01

In the context of the continuous price reduction in photovoltaics (PV) in recent years, Si feedstock continues to be a relevant component in the cost breakdown of a PV module, highlighting the need for low-cost, low-capital expenditure (CAPEX) silicon technologies to further reduce this cost component. Upgraded metallurgical-grade silicon (UMG Si) has recently received much attention, improving its quality and even attaining, in some cases, solar cell efficiencies similar to those of conventional material. However, some technical challenges still have to be addressed when processing this material to compensate efficiently for the high content of impurities and contaminants. Adaptation of a conventional solar cell process to monocrystalline UMG Si wafers has been studied in this work. In particular, a tailored phosphorus diffusion gettering step followed by a low-temperature anneal at 700°C was implemented, resulting in enhanced bulk lifetime and emitter recombination properties. In spite of the need for further research and material optimization, UMG Si wafers were successfully processed, achieving efficiencies in the range of 15% for a standard laboratory solar cell process with aluminum back surface field.

Acceptable contamination levels in solar grade silicon: From feedstock to solar cell

International Nuclear Information System (INIS)

Hofstetter, J.; Lelievre, J.F.; Canizo, C.; Luque, A. del

2009-01-01

Ultimately, alternative ways of silicon purification for photovoltaic applications are developed and applied. There is an ongoing debate about what are the acceptable contamination levels within the purified silicon feedstock to specify the material as solar grade silicon. Applying a simple model and making some additional assumptions, we calculate the acceptable contamination levels of different characteristic impurities for each fabrication step of a typical industrial mc-Si solar cell. The acceptable impurity concentrations within the finished solar cell are calculated for SRH recombination exclusively and under low injection conditions. It is assumed that during solar cell fabrication impurity concentrations are only altered by a gettering step. During the crystallization process, impurity segregation at the solid-liquid interface and at extended defects are taken into account. Finally, the initial contamination levels allowed within the feedstock are deduced. The acceptable concentration of iron in the finished solar cell is determined to be 9.7x10 -3 ppma whereas the concentration in the silicon feedstock can be as high as 12.5 ppma. In comparison, the titanium concentration admitted in the solar cell is calculated to be 2.7x10 -4 ppma and the allowed concentration of 2.2x10 -2 ppma in the feedstock is only two orders of magnitude higher. Finally, it is shown theoretically and experimentally that slow cooling rates can lead to a decrease of the interstitial Fe concentration and thus relax the purity requirements in the feedstock.

Electronic and local atomistic structure of MgSiO3 glass under pressure: a study of X-ray Raman scattering at the silicon and magnesium L-edges

Science.gov (United States)

Fukui, Hiroshi; Hiraoka, Nozomu

2018-02-01

We applied X-ray Raman scattering technique to MgSiO3 glass, a precursor to magnesium silicate melts, with respect to magnesium and silicon under high-pressure conditions as well as some polycrystalline phases of MgSiO3 at ambient conditions. We also performed ab initio calculations to interpret the X-ray Raman spectra. Experimentally obtained silicon L-edge spectra indicate that the local environment around silicon started changing at pressure above 10 GPa, where the electronic structure of oxygen is known to change. In contrast, the shape of the magnesium L-edge spectrum changed below 10 GPa. This indicates that the magnesium sites in MgSiO3 glass first distort and that the local structure around magnesium shows a wide variation under pressure. The framework structure consisting of silicon and oxygen changed above 10 GPa, where the coordination number of silicon was more than four. Our results imply that 6-oxygen-coordinated silicon was formed above 20 GPa.

Removal of inclusions from silicon

Science.gov (United States)

Ciftja, Arjan; Engh, Thorvald Abel; Tangstad, Merete; Kvithyld, Anne; Øvrelid, Eivind Johannes

2009-11-01

The removal of inclusions from molten silicon is necessary to satisfy the purity requirements for solar grade silicon. This paper summarizes two methods that are investigated: (i) settling of the inclusions followed by subsequent directional solidification and (infiltration by ceramic foam filters. Settling of inclusions followed by directional solidification is of industrial importance for production of low-cost solar grade silicon. Filtration is reported as the most efficient method for removal of inclusions from the top-cut silicon scrap.

MgB2 thin films on silicon nitride substrates prepared by an in situ method

International Nuclear Information System (INIS)

Monticone, Eugenio; Gandini, Claudio; Portesi, Chiara; Rajteri, Mauro; Bodoardo, Silvia; Penazzi, Nerino; Dellarocca, Valeria; Gonnelli, Renato S

2004-01-01

Large-area MgB 2 thin films were deposited on silicon nitride and sapphire substrates by co-deposition of Mg and B. After a post-annealing in Ar atmosphere at temperatures between 773 and 1173 K depending on the substrate, the films showed a critical temperature higher than 35 K with a transition width less than 0.5 K. The x-ray diffraction pattern suggested a c-axis preferential orientation in films deposited on amorphous substrate. The smooth surface and the good structural properties of these MgB 2 films allowed their reproducible patterning by a standard photolithographic process down to dimensions of the order of 10 μm and without a considerable degradation of the superconducting properties

Mg/Ca ratio in fertilization and agricultural soils, Mg percent of liming ...

African Journals Online (AJOL)

Strong increase of NPK (nitrogen, phosphorus and potassium) in mineral fertilization (fm) included relative delay in Mg supplementation and dilution in plant available silicon (Si) via recycled nutrients (rcl). (Silicon is not included in essential fertilizers in Finland.) Methods: We have assessed old data on Ca and Mg in ...

Development of processes for the production of solar grade silicon from halides and alkali metals, phase 1 and phase 2

Science.gov (United States)

Dickson, C. R.; Gould, R. K.; Felder, W.

1981-01-01

High temperature reactions of silicon halides with alkali metals for the production of solar grade silicon are described. Product separation and collection processes were evaluated, measure heat release parameters for scaling purposes and effects of reactants and/or products on materials of reactor construction were determined, and preliminary engineering and economic analysis of a scaled up process were made. The feasibility of the basic process to make and collect silicon was demonstrated. The jet impaction/separation process was demonstrated to be a purification process. The rate at which gas phase species from silicon particle precursors, the time required for silane decomposition to produce particles, and the competing rate of growth of silicon seed particles injected into a decomposing silane environment were determined. The extent of silane decomposition as a function of residence time, temperature, and pressure was measured by infrared absorption spectroscopy. A simplistic model is presented to explain the growth of silicon in a decomposing silane enviroment.

Solar Grade Silicon from Agricultural By-products

Energy Technology Data Exchange (ETDEWEB)

Laine, Richard M

2012-08-20

In this project, Mayaterials developed a low cost, low energy and low temperature method of purifying rice hull ash to high purity (5-6Ns) and converting it by carbothermal reduction to solar grade quality silicon (Sipv) using a self-designed and built electric arc furnace (EAF). Outside evaluation of our process by an independent engineering firm confirms that our technology greatly lowers estimated operating expenses (OPEX) to $5/kg and capital expenses (CAPEX) to $24/kg for Sipv production, which is well below best-in-class plants using a Siemens process approach (OPEX of 14/kg and CAPEX of $87/kg, respectively). The primary limiting factor in the widespread use of photovoltaic (PV) cells is the high cost of manufacturing, compared to more traditional sources to reach 6 g Sipv/watt (with averages closer to 8+g/watt). In 2008, the spot price of Sipv rose to $450/kg. While prices have since dropped to a more reasonable $25/kg; this low price level is not sustainable, meaning the longer-term price will likely return to $35/kg. The 6-8 g Si/watt implies that the Sipv used in a module will cost $0.21-0.28/watt for the best producers (45% of the cost of a traditional solar panel), a major improvement from the cost/wafer driven by the $50/kg Si costs of early 2011, but still a major hindrance in fulfilling DOE goal of lowering the cost of solar energy below $1/watt. The solar cell industry has grown by 40% yearly for the past eight years, increasing the demand for Sipv. As such, future solar silicon price spikes are expected in the next few years. Although industry has invested billions of dollars to meet this ever-increasing demand, the technology to produce Sipv remains largely unchanged requiring the energy intensive, and chlorine dependent Siemens process or variations thereof. While huge improvements have been made, current state-of-the-art industrial plant still use 65 kWh/kg of silicon purified. Our technology offers a key distinction to other technologies as it

Dry Sliding Wear Behavior of A356 Alloy/Mg2Sip Functionally Graded in-situ Composites: Effect of Processing Conditions

Directory of Open Access Journals (Sweden)

S.C. Ram

2016-09-01

Full Text Available In present study, the effect of dry sliding wear conditions of A356 alloy/Mg2Sip functionally graded in-situ composites developed by centrifugal casting method has been studied. A pure commercial A356 alloy (Al–7.5Si–0.3Mg was selected to be the matrix of the composites and primary Mg2Sip reinforcing particles were formed by in-situ chemical reaction with an average grain size of 40-47.8 µm. The Al–(Mg2Sip functionally graded metal matrix composites (FGMMC’s were synthesized by centrifugal casting technique with radial geometry, using two different mould rotating speeds ( 1200 and 1600 rpm. The X-ray diffraction (XRD characterization technique was carried out to confirm the in-situ formed Mg2Si particles in composites. Optical microscopy examination was carried out to reveals the grain refinement of Al-rich grains due to in-situ formed Mg2Si particles. Scanning electron microscope (SEM and Energy dispersive X-ray spectroscopy (EDS techniques were carried out to reveal the distribution of phases, morphological characteristics and confirmation of primary Mg2Si particles in the matrix. The sliding wear behavior was studied using a Pin-on-Disc set-up machine with sliding wear parameters: effect of loads (N, effect of sliding distances (m and effect of Mg on wear at room temperature with a high-carbon chromium steel disc (HRC-64 as counter surfaces. A good correlation was evidenced between the dry sliding behaviour of functionally graded in-situ composites and the distribution of Mg2Si reinforcing particles. Beside the above processing conditions, the dominant wear mechanisms of functionally graded in-situ composites have been correlated with the microstructures. The hardness and wear resistance properties of these composites increase with increasing volume percent of reinforced primary Si/Mg2Si particles toward inner zone of cast cylindrical shapes. The objective of this works was to study the tribological characteristics under dry sliding

Microstructure and Mechanical Behaviour of Stir-Cast Al-Mg-Sl Alloy Matrix Hybrid Composite Reinforced with Corn Cob Ash and Silicon Carbide

Directory of Open Access Journals (Sweden)

Oluwagbenga Babajide Fatile

2014-10-01

Full Text Available In this present study, the microstructural and mechanical behaviour of Al-Mg-Si alloy matrix composites reinforced with silicon carbide (SiC and Corn cob ash (An agro‑waste was investigated. This research work was aimed at assessing the suitability of developing low cost- high performance Al-Mg-Si hybrid composite. Silicon carbide (SiC particulates added with 0,1,2,3 and 4 wt% Corn cob ash (CCA were utilized to prepare 10 wt% of the reinforcing phase with Al-Mg-Si alloy as matrix using two-step stir casting method. Microstructural characterization, density measurement, estimated percent porosity, tensile testing, and micro‑hardness measurement were used to characterize the composites produced. From the results obtained, CCA has great potential to serve as a complementing reinforcement for the development of low cost‑high performance aluminum hybrid composites.

Modification mechanism of eutectic silicon in Al–6Si–0.3Mg alloy with scandium

Energy Technology Data Exchange (ETDEWEB)

Patakham, Ussadawut [Manufacturing and Systems Engineering Program, Department of Production Engineering, Faculty of Engineering, King Mongkut’s University of Technology Thonburi, 126 Pracha-Utid Rd., Bangmod, Tungkhru, Bangkok 10140 (Thailand); Kajornchaiyakul, Julathep [National Metal and Material Technology Center, National Science and Technology Development Agency, 114 Thailand Science Park, Klong Nueng, Klong Luang, Pathumthani 12120 (Thailand); Limmaneevichitr, Chaowalit, E-mail: chaowalit.lim@kmutt.ac.th [Manufacturing and Systems Engineering Program, Department of Production Engineering, Faculty of Engineering, King Mongkut’s University of Technology Thonburi, 126 Pracha-Utid Rd., Bangmod, Tungkhru, Bangkok 10140 (Thailand)

2013-10-25

Highlights: •Morphologies and growth of Sc and Sr-modified eutectic silicon resemble those of dendrites. •Crystal orientation of eutectic aluminum depends on growth characteristics of eutectic silicon. •We report strong evidence of the occurrence of an impurity-induced twinning mechanism. -- Abstract: The modification mechanism of eutectic silicon in Al–6Si–0.3Mg alloy with scandium was studied. The crystallographic orientation relationships between primary dendrites and the eutectic phase of unmodified and modified Al–6Si–0.3 Mg alloys were determined using electron backscatter diffraction (EBSD). The orientation of aluminum modified with scandium in the eutectic phase was different from that of the neighboring primary dendrites. This result implies that eutectic aluminum grows epitaxially from the surrounding primary aluminum dendrites in the unmodified alloy and that eutectic aluminum grows competitively from the surrounding primary aluminum dendrites in the modified alloy. The pole figure maps of eutectic Si in the [1 0 0], [1 1 0] and [1 1 1] axes of the unmodified and Sc-modified alloys were different, suggesting that the eutectic Al and Si crystals in modified alloy growth are more isotropic and cover a larger set of directions. The lattice fringes of Si of the alloys with and without Sc modification were different in the TEM results. The lattice fringes of Si in modified alloy were found to be multiple twins. However, this was not observed in the unmodified alloy. The growth characteristic of eutectic Si crystal in modified alloy suggests the occurrence of multiple twinning reactions and the formation of a high density of twins. This modification mechanism by Sc is explained by the results of scanning electron microscopy (SEM), electron backscatter diffraction (EBSD) and transmission electron microscopy (TEM) analysis, which provide strong evidence of the occurrence of the impurity-induced twinning (IIT) mechanism.

Recycling of silicon: from industrial waste to biocompatible nanoparticles for nanomedicine

Science.gov (United States)

Kozlov, N. K.; Natashina, U. A.; Tamarov, K. P.; Gongalsky, M. B.; Solovyev, V. V.; Kudryavtsev, A. A.; Sivakov, V.; Osminkina, L. A.

2017-09-01

The formation of photoluminescent porous silicon (PSi) nanoparticles (NPs) is usually based on an expensive semiconductor grade wafers technology. Here, we report a low-cost method of PSi NPs synthesis from the industrial silicon waste remained after the wafer production. The proposed method is based on metal-assisted wet-chemical etching (MACE) of the silicon surface of cm-sized metallurgical grade silicon stones which leads to a nanostructuring of the surface due to an anisotropic etching, with subsequent ultrasound fracturing in water. The obtained PSi NPs exhibit bright red room temperature photoluminescence (PL) and demonstrate similar microstructure and physical characteristics in comparison with the nanoparticles synthesized from semiconductor grade Si wafers. PSi NPs prepared from metallurgical grade silicon stones, similar to silicon NPs synthesized from high purity silicon wafer, show low toxicity to biological objects that open the possibility of using such type of NPs in nanomedicine.

Nondestructive ultrasonic characterization of armor grade silicon carbide

Science.gov (United States)

Portune, Andrew Richard

Ceramic materials have traditionally been chosen for armor applications for their superior mechanical properties and low densities. At high strain rates seen during ballistic events, the behavior of these materials relies upon the total volumetric flaw concentration more so than any single anomalous flaw. In this context flaws can be defined as any microstructural feature which detriments the performance of the material, potentially including secondary phases, pores, or unreacted sintering additives. Predicting the performance of armor grade ceramic materials depends on knowledge of the absolute and relative concentration and size distribution of bulk heterogeneities. Ultrasound was chosen as a nondestructive technique for characterizing the microstructure of dense silicon carbide ceramics. Acoustic waves interact elastically with grains and inclusions in large sample volumes, and were well suited to determine concentration and size distribution variations for solid inclusions. Methodology was developed for rapid acquisition and analysis of attenuation coefficient spectra. Measurements were conducted at individual points and over large sample areas using a novel technique entitled scanning acoustic spectroscopy. Loss spectra were split into absorption and scattering dominant frequency regimes to simplify analysis. The primary absorption mechanism in polycrystalline silicon carbide was identified as thermoelastic in nature. Correlations between microstructural conditions and parameters within the absorption equation were established through study of commercial and custom engineered SiC materials. Nonlinear least squares regression analysis was used to estimate the size distributions of boron carbide and carbon inclusions within commercial SiC materials. This technique was shown to additionally be capable of approximating grain size distributions in engineered SiC materials which did not contain solid inclusions. Comparisons to results from electron microscopy

Synthesis of Novel Reactive Disperse Silicon-Containing Dyes and Their Coloring Properties on Silicone Rubbers

Directory of Open Access Journals (Sweden)

Ning Yu

2018-01-01

Full Text Available Novel red and purple reactive disperse silicon-containing dyes were designed and synthesized using p-nitroaniline and 6-bromo-2,4-dinitro-aniline as diazonium components, the first condensation product of cyanuric chloride and 3-(N,N-diethylamino-aniline as coupling component, and 3-aminopropylmethoxydimethylsilane, 3-aminopropylmethyldimethoxysilane, and 3-aminopropyltrimethoxysilane as silicone reactive agents. These dyes were characterized by UV-Vis, 1H-NMR, FT-IR, and MS. The obtained reactive disperse silicon-containing dyes were used to color silicone rubbers and the color fastness of the dyes were evaluated. The dry/wet rubbing and washing fastnesses of these dyes all reached 4–5 grade and the sublimation fastness was also above 4 grade, indicating outstanding performance in terms of color fastness. Such colored silicone rubbers showed bright and rich colors without affecting its static mechanical properties.

Influence of MgO containing strontium on the structure of ceramic film formed on grain oriented silicon steel surface

Directory of Open Access Journals (Sweden)

Daniela C. Leite Vasconcelos

1999-07-01

Full Text Available The oxide layer formed on the surface of a grain oriented silicon steel was characterized by SEM and EDS. 3% Si steel substrates were coated by two types of slurries: one formed by MgO and water and other formed by MgO, water and SrSO4. The ceramic films were evaluated by SEM, EDS and X-ray diffraction. Depth profiles of Fe, Si and Mg were obtained by GDS. The magnetic core losses (at 1.7 Tesla, 60 Hz of the coated steel samples were evaluated as well. The use of MgO containing strontium reduced the volume fraction of forsterite particles beneath the outermost ceramic layer. It was observed a reduced magnetic core loss with the use of the slurry with MgO containing strontium.

Quasi-2D silicon structures based on ultrathin Me2Si (Me = Mg, Ca, Sr, Ba) films

Science.gov (United States)

Migas, D. B.; Bogorodz, V. O.; Filonov, A. B.; Borisenko, V. E.; Skorodumova, N. V.

2018-04-01

By means of ab initio calculations with hybrid functionals we show a possibility for quasi-2D silicon structures originated from semiconducting Mg2Si, Ca2Si, Sr2Si and Ba2Si silicides to exist. Such a 2D structure is similar to the one of transition metal chalcogenides where silicon atoms form a layer in between of metal atoms aligned in surface layers. These metal surface atoms act as pseudo passivation species stabilizing crystal structure and providing semiconducting properties. Considered 2D Mg2Si, Ca2Si, Sr2Si and Ba2Si have band gaps of 1.14 eV, 0.69 eV, 0.33 eV and 0.19 eV, respectively, while the former one is also characterized by a direct transition with appreciable oscillator strength. Electronic states of the surface atoms are found to suppress an influence of the quantum confinement on the band gaps. Additionally, we report Sr2Si bulk in the cubic structure to have a direct band gap of 0.85 eV as well as sizable oscillator strength of the first direct transition.

Corrosion behaviour of groundnut shell ash and silicon carbide hybrid reinforced Al-Mg-Si alloy matrix composites in 3.5% NaCl and 0.3M H2SO4 solutions

Directory of Open Access Journals (Sweden)

Kenneth Kanayo ALANEME

2015-05-01

Full Text Available The corrosion behaviour of Al-Mg-Si alloy based composites reinforced with groundnut shell ash (GSA and silicon carbide (SiC was investigated. The aim is to assess the corrosion properties of Al-Mg-Si alloy based hybrid reinforced composites developed using different mix ratios of GSA (a cheaply processed agro waste derivative which served as partial replacement for SiC and SiC as reinforcing materials. GSA and SiC mixed in weight ratios 0:1, 1:3, 1:1, 3:1, and 1:0 were utilized to prepare 6 and 10 wt% of the reinforcing phase with Al‐Mg‐Si alloy as matrix using two‐step stir casting method. Mass loss and corrosion rate measurement was used to study the corrosion behaviour of the produced composites in 3.5% NaCl and 0.3M H2SO4 solutions. The results show that the Al-Mg-Si alloy based composites containing 6 and 10 wt% GSA and SiC in varied weight ratios were resistant to corrosion in 3.5% NaCl solution. The composites were however more susceptible to corrosion in 0.3M H2SO4 solution (in comparison with the 3.5% NaCl solution. It was noted that the Al-Mg-Si/6 wt% GSA-SiC hybrid composite grades containing GSA and SiC in weight ratio 1:3 and 3:1 respectively exhibited superior corrosion resistance in the 0.3M H2SO4 solution compared to other composites produced for this series. In the case of the Al-Mg-Si/10 wt% GSA-SiC hybrid composite grades, the corrosion resistance was relatively superior for the composites containing a greater weight ratio of GSA (75% and 100% in 0.3M H2SO4 solution.

Process for making silicon

Science.gov (United States)

Levin, Harry (Inventor)

1987-01-01

A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

Effects of 400 keV electrons flux on two space grade silicone rubbers

Energy Technology Data Exchange (ETDEWEB)

Jochem, H. [ONERA – The French Aerospace Lab, F-31055 Toulouse (France); Université de Toulouse, UPS, and CNRS, LHFA, UMR 5069, 118 route de Narbonne, F-31062 Toulouse Cedex 9 (France); CNES – French Aerospace Agency, 18 Avenue Edouard Belin, F-31401 Toulouse Cedex 9 (France); Rejsek-Riba, V. [ONERA – The French Aerospace Lab, F-31055 Toulouse (France); Maerten, E., E-mail: maerten@chimie.ups-tlse.fr [Université de Toulouse, UPS, and CNRS, LHFA, UMR 5069, 118 route de Narbonne, F-31062 Toulouse Cedex 9 (France); Remaury, S. [CNES – French Aerospace Agency, 18 Avenue Edouard Belin, F-31401 Toulouse Cedex 9 (France); Solé, S.; Sierra, G. [MAP Coatings – ZI, 2 Rue Clément Ader, 09100 Pamiers (France); Baceiredo, A. [Université de Toulouse, UPS, and CNRS, LHFA, UMR 5069, 118 route de Narbonne, F-31062 Toulouse Cedex 9 (France); Guillaumon, O. [MAP Coatings – ZI, 2 Rue Clément Ader, 09100 Pamiers (France)

2013-08-15

Two different space grade silicone rubbers were irradiated by an electron flux of 400 keV. The irradiation impact strongly depends on the chemical structure of rubbers (one reinforced with MQ resins, and the other one functionalized with phenyl groups at the silicon atoms and reinforced with silica). The irradiated rubbers were studied by means of solvent swelling, solid-state {sup 29}Si NMR, and ATR–FTIR spectroscopy. Physical properties were evaluated by thermal (differential scanning calorimetry), mechanical (dynamic mechanical analysis), and thermo-optical (ultraviolet–visible–near infrared spectroscopy) analyses. The formation of silicium T units and Si–CH{sub 2}–Si networks were evidenced by {sup 29}Si NMR, and the increase of the glass transition temperature and of modulus reflect the substantial increase in the macromolecular chain rigidity of the irradiated material. Dramatic damages of mechanical properties were observed, depending on the reinforced materials used. Slight changes of thermo-optical properties were highlighted independently to the initial chemical structure. - Highlights: • Electron flux radiations generate chains cross-linking. • Cross-linking occurs by T and Si–CH{sub 2}–Si units formation. • The cross-linking rate is slightly faster for 2D rubber compared to 3D rubber. • Modulus increases much more significantly for 3D rubber.

Impact of diagenesis and low grade metamorphosis on Triassic sabkha dolomite δ26Mg

Science.gov (United States)

Immenhauser, A.; Geske, A.; Richter, D.; Buhl, D.; Niedermayr, A.

2012-12-01

Dolomite is a common rock forming mineral in the geological record but its value as archive of ancient seawater δ26Mg signatures and their variations in time are at present underexplored. Unknown factors include the sensitivity of δ26Mg ratio to processes in the diagenetic and low grade metamorphic domain. Here, we document and discusses the first detailed δ26Mg data set from early diagenetic and burial dolomites. Samples come from the Upper Triassic Hauptdolomit (Dolomia Principale; The Dolomites, Italy) and include coeval dolmicrites that underwent differential burial diagenesis in a temperature range between about 100 and more than 350°C. As indicated by dolmicrite 87/86Sr ratios, sabkha calcian D1 dolomites precipitated from evaporated seawater and stabilized at an early diagenetic stage to D2 dolomites analysed here. With increasing burial temperature, dolomite δ26Mg ratio scatter in the data set decreases with increasing Mg/Ca ratio and degree of order. Specifically, δ26Mg ratio variability is reduced from ~0.7‰ at burial temperatures beneath 100°C to about ~0.2‰ at temperatures in excess of 350°C, respectively, with mean δ26Mg values ranging constantly near -1.9‰. This suggests that, at least for the rock buffered system investigated here, dolmicrite δ26Mg proxy data are conservative and preserve near pristine values even at elevated burial temperatures. At present, the main element of uncertainty is the Mg-isotope fractionation factor between (evaporated) seawater and dolomite. A possible solution to this problem includes the compilation of a data from modern sabkha environments including pore water and calcian dolomite δ26Mg isotope signatures.

Investigation of optimized experimental parameters including laser wavelength for boron measurement in photovoltaic grade silicon using laser-induced breakdown spectroscopy

International Nuclear Information System (INIS)

Darwiche, S.; Benmansour, M.; Eliezer, N.; Morvan, D.

2010-01-01

The quantification of boron and other impurities in photovoltaic grade silicon was investigated using the LIBS technique with attention to the laser wavelength employed, temporal parameters, and the nature of the ambient gas. The laser wavelength was found to have a moderate effect on the performance of the process, while the type of purge gas and temporal parameters had a strong effect on the signal-to-background ratio (SBR) of the boron spectral emission, which was used to determine the boron concentration in silicon. The three parameters are not independent, meaning that for each different purge gas, different optimal temporal parameters are observed. Electron density was also calculated from Stark broadening of the 390.5 nm silicon emission line in order to better understand the different performances observed when using different gases and gating parameters. Calibration curves were made for boron measurement in silicon using certified standards with different purge gases while using the temporal parameters which had been optimized for that gas. By comparing the calibration curves, it was determined that argon is superior to helium or air for use as the analysis chamber purge gas with an UV laser.

Determination of surface recombination velocity and bulk lifetime in detector grade silicon and germanium crystals

International Nuclear Information System (INIS)

Derhacobian, N.; Fine, P.; Walton, J.T.; Wong, Y.K.; Rossington, C.S.; Luke, P.N.

1993-10-01

Utility of a noncontact photoconductive decay (PCD) technique is demonstrated in measuring bulk lifetime, τ B , and surface recombination velocity, S, in detector grade silicon and germanium crystals. We show that the simple analytical equations which relate the observed effective lifetimes in PCD transients to τ B and S have a limited range of applicability. The noncontact PCD technique is used to determine the effect of several surface treatments on the observed effective lifetimes in Si and Ge. A degradation of the effective lifetime in Si is reported as result of the growth of a thin layer of native oxide at room temperature under atmospheric conditions

Graded index and randomly oriented core-shell silicon nanowires for broadband and wide angle antireflection

Directory of Open Access Journals (Sweden)

P. Pignalosa

2011-09-01

Full Text Available Antireflection with broadband and wide angle properties is important for a wide range of applications on photovoltaic cells and display. The SiOx shell layer provides a natural antireflection from air to the Si core absorption layer. In this work, we have demonstrated the random core-shell silicon nanowires with both broadband (from 400nm to 900nm and wide angle (from normal incidence to 60º antireflection characteristics within AM1.5 solar spectrum. The graded index structure from the randomly oriented core-shell (Air/SiOx/Si nanowires may provide a potential avenue to realize a broadband and wide angle antireflection layer.

Apparatus for making molten silicon

Science.gov (United States)

Levin, Harry (Inventor)

1988-01-01

A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

Formation mechanism and control of MgO·Al2O3 inclusions in non-oriented silicon steel

Science.gov (United States)

Sun, Yan-hui; Zeng, Ya-nan; Xu, Rui; Cai, Kai-ke

2014-11-01

On the basis of the practical production of non-oriented silicon steel, the formation of MgO·Al2O3 inclusions was analyzed in the process of "basic oxygen furnace (BOF) → RH → compact strip production (CSP)". The thermodynamic and kinetic conditions of the formation of MgO·Al2O3 inclusions were discussed, and the behavior of slag entrapment in molten steel during RH refining was simulated by computational fluid dynamics (CFD) software. The results showed that the MgO/Al2O3 mass ratio was in the range from 0.005 to 0.017 and that MgO·Al2O3 inclusions were not observed before the RH refining process. In contrast, the MgO/Al2O3 mass ratio was in the range from 0.30 to 0.50, and the percentage of MgO·Al2O3 spinel inclusions reached 58.4% of the total inclusions after the RH refining process. The compositions of the slag were similar to those of the inclusions; furthermore, the critical velocity of slag entrapment was calculated to be 0.45 m·s-1 at an argon flow rate of 698 L·min-1, as simulated using CFD software. When the test steel was in equilibrium with the slag, [Mg] was 0.00024wt%-0.00028wt% and [Al]s was 0.31wt%-0.37wt%; these concentrations were theoretically calculated to fall within the MgO·Al2O3 formation zone, thereby leading to the formation of MgO·Al2O3 inclusions in the steel. Thus, the formation of MgO·Al2O3 inclusions would be inhibited by reducing the quantity of slag entrapment, controlling the roughing slag during casting, and controlling the composition of the slag and the MgO content in the ladle refractory.

Electron beam silicon purification

Energy Technology Data Exchange (ETDEWEB)

Kravtsov, Anatoly [SIA ' ' KEPP EU' ' , Riga (Latvia); Kravtsov, Alexey [' ' KEPP-service' ' Ltd., Moscow (Russian Federation)

2014-11-15

Purification of heavily doped electronic grade silicon by evaporation of N-type impurities with electron beam heating was investigated in process with a batch weight up to 50 kilos. Effective temperature of the melt, an indicative parameter suitable for purification process characterization was calculated and appeared to be stable for different load weight processes. Purified material was successfully approbated in standard CZ processes of three different companies. Each company used its standard process and obtained CZ monocrystals applicable for photovoltaic application. These facts enable process to be successfully scaled up to commercial volumes (150-300 kg) and yield solar grade silicon. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Metallurgical Parameters Controlling the Eutectic Silicon Charateristics in Be-Treated Al-Si-Mg Alloys.

Science.gov (United States)

Ibrahim, Mohamed F; Elgallad, Emad M; Valtierra, Salvador; Doty, Herbert W; Samuel, Fawzy H

2016-01-27

The present work was carried out on Al-7%Si-0.4%Mg-X alloy (where X = Mg, Fe, Sr or Be), where the effect of solidification rate on the eutectic silicon characteristics was investigated. Two solidification rates corresponding to dendrite arm spacings (DAS) of 24 and 65 μm were employed. Samples with 24 μm DAS were solution heat-treated at 540 °C for 5 and 12 h prior to quenching in warm water at 65 °C. Eutectic Si particle charateristics were measured using an image analyzer. The results show that the addition of 0.05% Be leads to partial modification of the Si particles. Full modification was only obtained when Sr was added in an amount of 150-200 ppm, depending on the applied solidification rate. Increasing the amount of Mg to 0.8% in Sr-modified alloys leads to a reduction in the effectiveness of Sr as the main modifier. Similar observations were made when the Fe content was increased in Be-treated alloys due to the Be-Fe interaction. Over-modification results in the precipitation of hard Sr-rich particles, mainly Al₄SrSi₂, whereas overheating causes incipient melting of the Al-Cu eutectic and hence the surrounding matrix. Both factors lead to a deterioration in the alloy mechanical properties. Furthermore, the presence of long, acicular Si particles accelerates the occurrence of fracture and, as a result, yields poor ductility. In low iron (less than 0.1 wt%) Al-Si-Mg alloys, the mechanical properties in the as cast, as well as heat treated conditions, are mainly controlled by the eutectic Si charatersitics. Increasing the iron content and, hence, the volume fraction of Fe-based intermetallics leads to a complex fracture mode.

Metallurgical Parameters Controlling the Eutectic Silicon Charateristics in Be-Treated Al-Si-Mg Alloys

Directory of Open Access Journals (Sweden)

Mohamed F. Ibrahim

2016-01-01

Full Text Available The present work was carried out on Al-7%Si-0.4%Mg-X alloy (where X = Mg, Fe, Sr or Be, where the effect of solidification rate on the eutectic silicon characteristics was investigated. Two solidification rates corresponding to dendrite arm spacings (DAS of 24 and 65 μm were employed. Samples with 24 μm DAS were solution heat-treated at 540 °C for 5 and 12 h prior to quenching in warm water at 65 °C. Eutectic Si particle charateristics were measured using an image analyzer. The results show that the addition of 0.05% Be leads to partial modification of the Si particles. Full modification was only obtained when Sr was added in an amount of 150–200 ppm, depending on the applied solidification rate. Increasing the amount of Mg to 0.8% in Sr-modified alloys leads to a reduction in the effectiveness of Sr as the main modifier. Similar observations were made when the Fe content was increased in Be-treated alloys due to the Be-Fe interaction. Over-modification results in the precipitation of hard Sr-rich particles, mainly Al4SrSi2, whereas overheating causes incipient melting of the Al-Cu eutectic and hence the surrounding matrix. Both factors lead to a deterioration in the alloy mechanical properties. Furthermore, the presence of long, acicular Si particles accelerates the occurrence of fracture and, as a result, yields poor ductility. In low iron (less than 0.1 wt% Al-Si-Mg alloys, the mechanical properties in the as cast, as well as heat treated conditions, are mainly controlled by the eutectic Si charatersitics. Increasing the iron content and, hence, the volume fraction of Fe-based intermetallics leads to a complex fracture mode.

Effect of CH3COOH on Hydrometallurgical Purification of Metallurgical-Grade Silicon Using HCl-HF Leaching

Science.gov (United States)

Tian, Chunjin; Lu, Haifei; Wei, Kuixian; Ma, Wenhui; Xie, Keqiang; Wu, Jijun; Lei, Yun; Yang, Bin; Morita, Kazuki

2018-04-01

The present study investigated the effects of adding CH3COOH to HCl and HF used to purify metallurgical-grade Si (MG-Si). After 6 h of leaching MG-Si with an acid mixture consisting of 4 mol L-1 HCl, 3 mol L-1 HF, and 3 mol L-1 CH3COOH at 348 K, the total impurity removal efficiency was 88.5%, exceeding the 81.5% removal efficiency obtained without addition of CH3COOH. The microstructural evolution of Si after etching with the two lixiviants indicated better dissolution of metal impurities in MG-Si when using the HCl-HF-CH3COOH mixture. Furthermore, the leaching kinetics of Fe using the HCl-HF and HCl-HF-CH3COOH mixtures were observed to depend on the interfacial chemical reactions.

Direct Production of Silicones From Sand

Energy Technology Data Exchange (ETDEWEB)

Larry N. Lewis; F.J. Schattenmann: J.P. Lemmon

2001-09-30

Silicon, in the form of silica and silicates, is the second most abundant element in the earth's crust. However the synthesis of silicones (scheme 1) and almost all organosilicon chemistry is only accessible through elemental silicon. Silicon dioxide (sand or quartz) is converted to chemical-grade elemental silicon in an energy intensive reduction process, a result of the exceptional thermodynamic stability of silica. Then, the silicon is reacted with methyl chloride to give a mixture of methylchlorosilanes catalyzed by cooper containing a variety of tract metals such as tin, zinc etc. The so-called direct process was first discovered at GE in 1940. The methylchlorosilanes are distilled to purify and separate the major reaction components, the most important of which is dimethyldichlorosilane. Polymerization of dimethyldichlorosilane by controlled hydrolysis results in the formation of silicone polymers. Worldwide, the silicones industry produces about 1.3 billion pounds of the basic silicon polymer, polydimethylsiloxane.

Development of low cost silicon solar cells by reusing the silicon saw dust collected during wafering process

International Nuclear Information System (INIS)

Zaidi, Z.I.; Raza, B.; Ahmed, M.; Sheikh, H.; Qazi, I.A.

2002-01-01

Silicon material due to its abundance in nature and maximum conversion efficiency has been successfully being used for the fabrication of electronic and photovoltaic devices such as ICs, diodes, transistors and solar cells. The 80% of the semiconductor industry is ruled by silicon material. Single crystal silicon solar cells are in use for both space and terrestrial application, due to the well developed technology and better efficiency than polycrystalline and amorphous silicon solar cells. The current research work is an attempt to reduce the cost of single crystal silicon solar cells by reusing the silicon saw dust obtained during the watering process. During the watering process about 45% Si material is wasted in the form of Si powder dust. Various waste powder silicon samples were analyzed using inductively Coupled Plasma (ICP) technique, for metallic impurities critical for solar grade silicon material. The results were evaluated from impurity and cost point of view. (author)

Low Cost Solar Array Project. Feasibility of the silane process for producing semiconductor-grade silicon. Final report, October 1975-March 1979

Energy Technology Data Exchange (ETDEWEB)

1979-06-01

The commercial production of low-cost semiconductor-grade silicon is an essential requirement of the JPL/DOE (Department of Energy) Low-Cost Solar Array (LSA) Project. A 1000-metric-ton-per-year commercial facility using the Union Carbide Silane Process will produce molten silicon for an estimated price of $7.56/kg (1975 dollars, private financing), meeting the DOE goal of less than $10/kg. Conclusions and technology status are reported for both contract phases, which had the following objectives: (1) establish the feasibility of Union Carbide's Silane Process for commercial application, and (2) develop an integrated process design for an Experimental Process System Development Unit (EPSDU) and a commercial facility, and estimate the corresponding commercial plant economic performance. To assemble the facility design, the following work was performed: (a) collection of Union Carbide's applicable background technology; (b) design, assembly, and operation of a small integrated silane-producing Process Development Unit (PDU); (c) analysis, testing, and comparison of two high-temperature methods for converting pure silane to silicon metal; and (d) determination of chemical reaction equilibria and kinetics, and vapor-liquid equilibria for chlorosilanes.

Process for making silicon from halosilanes and halosilicons

Science.gov (United States)

Levin, Harry (Inventor)

1988-01-01

A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

[Effects of silicon on the ultrastructures of wheat radical cells under copper stress].

Science.gov (United States)

Zhang, Dai-Jing; Ma, Jian-Hui; Yang, Shu-Fang; Chen, Hui-Ting; Liu, Pei; Wang, Wen-Fei; Li, Chun-Xi

2014-08-01

To explore the alleviation effect of silicon on wheat growth under copper stress, cultivar Aikang 58 was chosen as the experimental material. The growth, root activities and root tip ultrastructures of wheat seedlings, which were cultured in Hoagland nutrient solution with five different treatments (control, 15 mg x L(-1) Cu2+, 30 mg x L(-1) Cu2+, 15 mg x L(-1) Cu2+ and 50 mg x L(-1) silicon, 30 mg x L(-1) Cu2+ and 50 mg x L(-1) silicon), were fully analyzed. The results showed that root length, plant height and root activities of wheat seedlings were significantly restrained under the copper treatments compared with the control (P effects were alleviated after adding silicon to copper-stress Hoagland nutrient solution. Under copper stress, the cell wall and cell membrane of wheat seedling root tips suffered to varying degrees of destruction, which caused the increase of intercellular space and the disappearance of some organelles. After adding silicon, the cell structure was maintained intact, although some cells and organelles were still slightly deformed compared with the control. In conclusion, exogenous silicon could alleviate the copper stress damages on wheat seedlings and cellular components to some extent.

Fiscal 2000 achievement report. Development of energy use rationalization-oriented silicon manufacturing process (Survey and study of analysis of commercialization of solar-grade silicon material manufacturing technology); 2000 nendo shin energy sangyo gijutsu sogo kaihatsu kiko kyodo kenkyu gyomu seika hokokusho. Energy shiyo gorika silicon seizo process kaihatsu (Taiyodenchiyou silicon genryo seizo gijutsu no jitsuyoka kaiseki ni kansuru chosa kenkyu)

Energy Technology Data Exchange (ETDEWEB)

NONE

2001-03-01

The trend of technology development, problems harbored therein, trend of the market, and the like were investigated for supporting the development of technologies for the mass production and commercialization of solar-grade silicon materials. Concerning the future of production enhancement and cost reduction in the manufacture of polycrystalline silicon solar cells, studies were made from the technological viewpoint. The results are shown below. It is estimated that approximately 4,500 tons of material silicon will be necessary in 2005 and 6,500-10,700 tons in 2010. Since the melting purification method of NEDO (New Energy and Industrial Technology Development Organization) now under development step by step toward commercialization as well as the conventional source will provide the necessary amount of material silicon, it is inferred that the development of solar cells will go on without any restraint originating in the semiconductor industry. With the commercialization of the technologies so far developed and the development/commercialization of the fast-acting high-performance solar cell technology, probabilities are high that the polycrystalline silicon solar cell manufacturing cost in 2010 will be as low as to be on the 100 yen/W (93-118 yen/W) level which is the level now held up as the goal. (NEDO)

Optical properties of ZnO/MgZnO quantum wells with graded thickness

International Nuclear Information System (INIS)

Lv, X Q; Liu, W J; Hu, X L; Chen, M; Zhang, B P; Zhang, J Y

2011-01-01

The optical properties of ZnO/Mg 0.1 Zn 0.9 O single quantum wells with graded well width were studied using temperature-dependent photoluminescence (PL) spectroscopy. The ratio of emission intensity between the well and barrier layers was found to increase monotonically when the sample temperature was increased from 78 to 210 K, indicating an efficient carrier transfer from the barrier to the well. The emission peak of the Mg 0.1 Zn 0.9 O barrier exhibited a blueshift first and then a redshift with increasing temperature, which was attributed to the repopulation of localized carriers in energy-tail states induced by alloy composition fluctuations. Such an anomalous temperature dependence of PL energy contributed to the carrier transfer. On the other hand, the emission from the well layer exhibited a transition behaviour from localized to free excitons with increasing temperature. A further analysis of the temperature-dependent emission peaks of different well widths revealed that the localization energy of excitons was related to the potential variation induced mainly by well width fluctuations. Moreover, by comparing experimental results with calculation, the separation between the quantum confinement regime and quantum-confined Stark regime was found to occur at a well width of about 3 nm.

Effects of nanostructurized silicon on proliferation of stem and cancer cell.

Science.gov (United States)

Osminkina, L A; Luckyanova, E N; Gongalsky, M B; Kudryavtsev, A A; Gaydarova, A Kh; Poltavtseva, R A; Kashkarov, P K; Timoshenko, V Yu; Sukhikh, G T

2011-05-01

In vitro experiments showed that stem and cancer cells retained their viability on the surface of porous silicon with 10-100 nm nanostructures, but their proliferation was inhibited. Silicon nanoparticles of 100 nm in size obtained by mechanical grinding of porous silicon films or crystal silicon plates in a concentration below 1 mg/ml in solution did not modify viability and proliferation of mouse fibroblast and human laryngeal cancer cells. Additional ultrasonic exposure of cancer cells in the presence of 1 mg/ml silicon nanoparticles added to nutrient medium led to complete destruction of cells or to the appearance of membrane defects blocking their proliferation and initiating their apoptotic death.

The impact of silicon feedstock on the PV module cost

NARCIS (Netherlands)

del Coso, G.; del Cañizo, C.; Sinke, W.C.

2010-01-01

The impact of the use of new (solar grade) silicon feedstock materials on the manufacturing cost of wafer-based crystalline silicon photovoltaic modules is analyzed considering effects of material cost, efficiency of utilisation, and quality. Calculations based on data provided by European industry

Solidification and properties of photovoltaic silicon

International Nuclear Information System (INIS)

Anon.

2007-01-01

Strenuous efforts are being made to develop an economical process for purifying liquid metallurgical-grade silicon, in response to the growing shortages in high-purity silicon for use in manufacturing photovoltaic cells. A research project is studying this issue at C.E. Saclay, Gif-sur-Yvette, France, co-funded by ADEME (the French Environment and Energy Management Agency) and CEA-INSTN (French Atomic Energy Commission National Institute for Nuclear Science and Technology). (authors)

Solutionizing temperature and abrasive wear behaviour of cast Al-Si-Mg alloys

International Nuclear Information System (INIS)

Sharma, Rajesh; Anesh; Dwivedi, D.K.

2007-01-01

In the present paper, the influence of solutionizing temperature during artificial age hardening treatment (T 6 ) of cast Al-(8, 12, 16%)Si-0.3%Mg on abrasive wear behaviour has been reported. Alloys were prepared by controlled melting and casting. Cast alloys were given artificial age hardening treatment having a sequence of solutionizing, quenching and artificial aging. All the alloys were solutionized at 450 deg. C, 480 deg. C, 510 deg. C, and 550 deg. C for 8 h followed by water quenching (30 deg. C) and aging hardening at 170 deg. C for 12 h. Abrasive wear tests were conducted against 320 grade SiC polishing papers at 5 N and 10 N normal loads. It was observed that the silicon content and solution temperature affected the wear resistance significantly. Increase in solution temperature improved the wear resistance. Hypereutectic alloy showed better wear resistance than the eutectic and hypoeutectic alloys under identical conditions. Optical microstructure study of alloys revealed that the increase in solutionizing temperature improved distribution of silicon grains. Scanning electron microscopy (SEM) of wear surface was carried out to analyze the wear mechanism

Improving Crystalline Silicon Solar Cell Efficiency Using Graded-Refractive-Index SiON/ZnO Nanostructures

Directory of Open Access Journals (Sweden)

Yung-Chun Tu

2015-01-01

Full Text Available The fabrication of silicon oxynitride (SiON/ZnO nanotube (NT arrays and their application in improving the energy conversion efficiency (η of crystalline Si-based solar cells (SCs are reported. The SiON/ZnO NT arrays have a graded-refractive-index that varies from 3.5 (Si to 1.9~2.0 (Si3N4 and ZnO to 1.72~1.75 (SiON to 1 (air. Experimental results show that the use of 0.4 μm long ZnO NT arrays coated with a 150 nm thick SiON film increases Δη/η by 39.2% under AM 1.5 G (100 mW/cm2 illumination as compared to that of regular SCs with a Si3N4/micropyramid surface. This enhancement can be attributed to SiON/ZnO NT arrays effectively releasing surface reflection and minimizing Fresnel loss.

Oxygen and carbon transfer during solidification of semiconductor grade silicon in different processes

Science.gov (United States)

Ribeyron, P. J.; Durand, F.

2000-03-01

A model is established for comparing the solute distribution resulting from four solidification processes currently applied to semiconductor grade silicon: Czochralski pulling (CZ), floating zone (FZ), 1D solidification and electromagnetic continuous pulling (EMCP). This model takes into account solid-liquid interface exchange, evaporation to or contamination by the gas phase, container dissolution, during steady-state solidification, and in the preliminary preparation of the melt. For simplicity, the transfers are treated in the crude approximation of perfectly mixed liquid and boundary layers. As a consequence, only the axial ( z) distribution can be represented. Published data on oxygen and carbon transfer give a set of acceptable values for the thickness of the boundary layers. In the FZ and EMCP processes, oxygen evaporation can change the asymptotic behaviour of the reference Pfann law. In CZ and in 1D-solidification, a large variety of solute profile curves can be obtained, because they are very sensitive to the balance between crucible dissolution and evaporation. The CZ process clearly brings supplementary degrees of freedom via the geometry of the crucible, important for the dissolution phenomena, and via the rotation rate of the crystal and of the crucible, important for acting on transfer kinetics.

A study on the effect of silicon content on mechanical properties

International Nuclear Information System (INIS)

Kwon, C.T.; Nam, T.W.; Lee, S.I.

1978-01-01

In Al-Si alloy, the variation of mechanical properties with silicon contents was investigated the silicon content being varied from 5% to 25%, and the effects of additives and refining elements were also studied. The results obtained are as follows: 1) Sodium treatment made the primary silicon crystals refined and spheroidized, and made the matrix structure intensified. The effect of P treatment on refining primary silicon crystals was greater then that of Na. 2) Tensile strength showed the maximum value at near the eutectic composition and was improved considerably by addition of Mg and treatment with Na. 3) The variation of matrix hardness with silicon contents was not perceptible and the hardness was improved by addition of Mg and treatment with Na. (author)

Experimental transconjunctival diode laser retinal photocoagulation through silicone scleral exoplants.

Science.gov (United States)

Nanda, S K; Han, D P

1995-07-01

To study the feasibility of inducing a chorioretinal lesion under a previously placed scleral buckle by experimental transconjunctival diode laser photocoagulation. We performed transconjunctival diode laser photocoagulation in the peripheral retinas of seven pigmented rabbit eyes with a silicone exoplant (No. 42 band or No. 276 tire) and seven eyes without an exoplant. Each eye received burns with an intensity of grades 1 to 3 in different quadrants at varying power levels, with a 0.5-second duration and 650-micron spot size. Eyes were enucleated for histopathologic studies 1 day and 1 week after treatment. Although the irradiance emitted through the No. 42 band and the No. 276 tire was attenuated by 17% and 23%, respectively, the range of threshold powers needed to produce grades 1 to 3 burns was similar between eyes with and without a silicone exoplant. At 1 day, full-thickness coagulative necrosis was observed in all lesions, except that the ganglion cell layer and inner nuclear layer were preserved in two of four grade 1 burns and the ganglion cell layer was intact in one of six grade 2 burns. Inner scleral changes were noted acutely in three of five grade 3 lesions. At 1 week, burns of all intensity grades showed a full-thickness atrophic chorioretinal lesion with inner scleral changes. Experimental transconjunctival diode laser photocoagulation through hard silicone elements reproducibly created a chorioretinal lesion with histopathologic findings similar to those of lesions obtained without these elements. Although retinal photocoagulative effects were prominent, inner scleral abnormalities were also observed histologically.

Porous silicon based anode material formed using metal reduction

Science.gov (United States)

Anguchamy, Yogesh Kumar; Masarapu, Charan; Deng, Haixia; Han, Yongbong; Venkatachalam, Subramanian; Kumar, Sujeet; Lopez, Herman A.

2015-09-22

A porous silicon based material comprising porous crystalline elemental silicon formed by reducing silicon dioxide with a reducing metal in a heating process followed by acid etching is used to construct negative electrode used in lithium ion batteries. Gradual temperature heating ramp(s) with optional temperature steps can be used to perform the heating process. The porous silicon formed has a high surface area from about 10 m.sup.2/g to about 200 m.sup.2/g and is substantially free of carbon. The negative electrode formed can have a discharge specific capacity of at least 1800 mAh/g at rate of C/3 discharged from 1.5V to 0.005V against lithium with in some embodiments loading levels ranging from about 1.4 mg/cm.sup.2 to about 3.5 mg/cm.sup.2. In some embodiments, the porous silicon can be coated with a carbon coating or blended with carbon nanofibers or other conductive carbon material.

Solar cell structure incorporating a novel single crystal silicon material

Science.gov (United States)

Pankove, Jacques I.; Wu, Chung P.

1983-01-01

A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

Leaching of Titanium and Silicon from Low-Grade Titanium Slag Using Hydrochloric Acid Leaching

Science.gov (United States)

Zhao, Longsheng; Wang, Lina; Qi, Tao; Chen, Desheng; Zhao, Hongxin; Liu, Yahui; Wang, Weijing

2018-05-01

Acid-leaching behaviors of the titanium slag obtained by selective reduction of vanadium-bearing titanomagnetite concentrates were investigated. It was found that the optimal leaching of titanium and silicon were 0.7% and 1.5%, respectively. The titanium and silicon in the titanium slag were firstly dissolved in the acidic solution to form TiO2+ and silica sol, and then rapidly reprecipitated, forming hydrochloric acid (HCl) leach residue. Most of the silicon presented in the HCl leach residue as floccules-like silica gel, while most of the titanium was distributed in the nano-sized rod-like clusters with crystallite refinement and intracrystalline defects, and, as such, 94.3% of the silicon was leached from the HCl leach residue by alkaline desilication, and 96.5% of the titanium in the titanium-rich material with some rutile structure was then digested by the concentrated sulfuric acid. This provides an alternative route for the comprehensive utilization of titanium and silicon in titanium slag.

Siloxanes in silicone products intended for food contact

DEFF Research Database (Denmark)

Cederberg, Tommy Licht; Jensen, Lisbeth Krüger

oligomers which might migrate to the food when the product is being used. DTU has proposed two action limits for low molecular weight siloxanes in food contact materials. For the sum of cyclic siloxanes D3 to D8 the limits are 12 mg/kg food for adults and 2 mg/kg food for children. For the sum of cyclic...... siloxanes D3 to D13 and linear siloxanes L3-L13 the limit is 60 mg/kg food. In 49 samples of silicone products intended for food contact from the Norwegian markets content of siloxanes has been measured. Coated paper for baking constituted 8 of the samples and in none of those samples siloxanes were found......Silicone is used in food contact materials due to its excellent physical and chemical properties. It is thermostable and flexible and is used in bakeware and kitchen utensils. Silicone is also used to coat paper to make it water and fat resistant. There is no specific regulation in EU which covers...

Surface Area, and Oxidation Effects on Nitridation Kinetics of Silicon Powder Compacts

Science.gov (United States)

Bhatt, R. T.; Palczer, A. R.

1998-01-01

Commercially available silicon powders were wet-attrition-milled from 2 to 48 hr to achieve surface areas (SA's) ranging from 1.3 to 70 sq m/g. The surface area effects on the nitridation kinetics of silicon powder compacts were determined at 1250 or 1350 C for 4 hr. In addition, the influence of nitridation environment, and preoxidation on nitridation kinetics of a silicon powder of high surface area (approximately equals 63 sq m/g) was investigated. As the surface area increased, so did the percentage nitridation after 4 hr in N2 at 1250 or 1350 C. Silicon powders of high surface area (greater than 40 sq m/g) can be nitrided to greater than 70% at 1250 C in 4 hr. The nitridation kinetics of the high-surface-area powder compacts were significantly delayed by preoxidation treatment. Conversely, the nitridation environment had no significant influence on the nitridation kinetics of the same powder. Impurities present in the starting powder, and those accumulated during attrition milling, appeared to react with the silica layer on the surface of silicon particles to form a molten silicate layer, which provided a path for rapid diffusion of nitrogen and enhanced the nitridation kinetics of high surface area silicon powder.

Silicon materials task of the Low Cost Solar Array Project: Effect of impurities and processing on silicon solar cells

Science.gov (United States)

Hopkins, R. H.; Davis, J. R.; Rohatgi, A.; Hanes, M. H.; Rai-Choudhury, P.; Mollenkopf, H. C.

1982-01-01

The effects of impurities and processing on the characteristics of silicon and terrestrial silicon solar cells were defined in order to develop cost benefit relationships for the use of cheaper, less pure solar grades of silicon. The amount of concentrations of commonly encountered impurities that can be tolerated in typical p or n base solar cells was established, then a preliminary analytical model from which the cell performance could be projected depending on the kinds and amounts of contaminants in the silicon base material was developed. The impurity data base was expanded to include construction materials, and the impurity performace model was refined to account for additional effects such as base resistivity, grain boundary interactions, thermal processing, synergic behavior, and nonuniform impurity distributions. A preliminary assessment of long term (aging) behavior of impurities was also undertaken.

Variation of the properties of siliconized graphite during neutron irradiation

International Nuclear Information System (INIS)

Virgil'ev, Y.S.; Chugunova, T.K.; Pikulik, R.G.

1986-01-01

The authors evaluate the radiation-induced property changes in siliconized graphite of the industrial grades SG-P and SG-M. The authors simultaneously tested the reference (control) specimens of graphite that are used as the base for obtaining the SG-M siliconized graphite by impregnating with silicon. The suggested scheme (model) atributes the dimensional changes of the siliconized graphite specimens to the effect of the quantitative ratio of the carbide phase and carbon under different conditions of irradiation. If silicon is insufficient for the formation of a dense skeleton, graphite plays a devisive role, and it may be assumed that at an irradiation temperature greater than 600 K, the material shrinks. The presence of isolated carbide inclusions also affects the physicomechanical properties (including the anitfriction properties)

Absorption of silicon from artesian aquifer water and its impact on bone health in postmenopausal women: a 12 week pilot study

Directory of Open Access Journals (Sweden)

Lee Tsz

2010-10-01

Full Text Available Abstract Background Decreased bone mineral density and osteoporosis in postmenopausal women represents a growing source of physical limitations and financial concerns in our aging population. While appropriate medical treatments such as bisphosphonate drugs and hormone replacement therapy exist, they are associated with serious side effects such as osteonecrosis of the jaw or increased cardiovascular risk. In addition to calcium and vitamin D supplementation, previous studies have demonstrated a beneficial effect of dietary silicon on bone health. This study evaluated the absorption of silicon from bottled artesian aquifer water and its effect on markers of bone metabolism. Methods Seventeen postmenopausal women with low bone mass, but without osteopenia or osteoporosis as determined by dual x-ray absorptiometry (DEXA were randomized to drink one liter daily of either purified water of low-silicon content (PW or silicon-rich artesian aquifer water (SW (86 mg/L silica for 12 weeks. Urinary silicon and serum markers of bone metabolism were measured at baseline and after 12 weeks and analyzed with two-sided t-tests with p Results The urinary silicon level increased significantly from 0.016 ± 0.010 mg/mg creatinine at baseline to 0.037 ± 0.014 mg/mg creatinine at week 12 in the SW group (p = 0.003, but there was no change for the PW group (0.010 ± 0.004 mg/mg creatinine at baseline vs. 0.009 ± 0.006 mg/mg creatinine at week 12, p = 0.679. The urinary silicon for the SW group was significantly higher in the silicon-rich water group compared to the purified water group (p Conclusions These findings indicate that bottled water from artesian aquifers is a safe and effective way of providing easily absorbed dietary silicon to the body. Although the silicon did not affect bone turnover markers in the short-term, the mineral's potential as an alternative prevention or treatment to drug therapy for osteoporosis warrants further longer-term investigation

Obtaining of polycrystalline silicon for semiconductor industry

International Nuclear Information System (INIS)

Mukashev, F.; Nauryzbaev, M.; Kolesnikov, B.; Ivanov, Y.

1996-01-01

The purpose of the project is to create pilot equipment and optimize the process of obtaining polycrystalline silicon on semi-industrial level. In the past several decades, the historical experience in the developing countries has shown that one of the most promising ways to improve the economy,of a country is to establish semiconductor industry. First of all, the results can help increase defense, national security and create industrial production. The silane method, which has been traditionally' used for obtaining technical and polycrystalline silicon, is to obtain and then to pyrolyzed mono-and poly silanes. Although the traditional methods of obtaining silicon hydrides have specific advantages, such as utilizing by-products, they also have clear shortcomings, i.e. either low output of the ultimate product ( through hydrolysis of Mg 2 Si) or high contents of by-products in it or high contents of dissolving vapors (through decomposing Mg 2 Si in non-water solutions)

Silicon fertilization and soil water tensions on rice development and yield

Directory of Open Access Journals (Sweden)

Jakeline R. de Oliveira

2016-02-01

Full Text Available ABSTRACT The cultivation of upland rice (Oryza sativa in Brazil occurs mainly in the Cerrado, a region with adverse weather conditions. The use of silicon in its cultivation becomes important, since this nutrient provides higher rigidity, lower transpiration and higher resistance to dry spells in rice plants. The objective of the present study was to evaluate the effect of silicon fertilization and soil water tensions on upland rice development and yield in a Cerrado Oxisol. A 5 x 5 fractionated factorial with five soil water tensions (0, 15, 30, 45 and 60 kPa and five silicon doses (0, 120, 240, 480 and 960 mg dm-3 was used, which were distributed in a randomized block design, with four replicates. Plant height, number of tillers, number of panicles, number of grains per panicle, numbers of full and empty grains and percentage of empty grains were evaluated. Silicon fertilization promotes increased tillering in rice plants at the dose of 960 mg dm-3. The numbers of tillers and panicles decreased with the application of silicon up to the doses of 460 and 490 mg dm-3, respectively. The increase in soil water tensions reduced plant height and the number of full grains, and increased the percentage of empty grains of upland rice.

Properties of textile grade ceramic fibers

International Nuclear Information System (INIS)

Pudnos, E.

1992-01-01

The availability of textile grade ceramic fibers has sparked great interest for applications in composite reinforcement and high temperature insulation. This paper summarizes the properties of various small diameter textile grade ceramic fibers currently available. Room temperature mechanical and electrical properties of the fibers are discussed for three cases: ambient conditions, after heat aging in argon, and after heat aging in wet air. Dow Corning (R) HPZ Ceramic Fiber, a silicon nitride type fiber, is shown to have improved retention of mechanical and electrical properties above 1200 C

Large volume liquid silicone injection in the upper thighs : a never ending story

NARCIS (Netherlands)

Hofer, SOP; Damen, A; Nicolai, JPA

This report concerns a 26-year-old male-to-female transsexual who had received a large volume liquid silicone injection of unknown grade into her upper lateral thighs to gain female contour. She presented at our outpatient clinic 4 years after the silicone injection with complaints of pain and

Flat-plate solar array project. Volume 2: Silicon material

Science.gov (United States)

Lutwack, R.

1986-10-01

The goal of the Silicon Material Task, a part of the Flat Plate Solar Array (FSA) Project, was to develop and demonstate the technology for the low cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. Summarized are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and Government researchers. The silane production section of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. The other process developments are described to varying extents. Studies are reported on the effects of impurities in silicon on both silicon-material properties and on solar cell performance. These studies on the effects of impurities yielded extensive information and models for relating specific elemental concentrations to levels of deleterious effects.

Flat-plate solar array project. Volume 2: Silicon material

Science.gov (United States)

Lutwack, R.

1986-01-01

The goal of the Silicon Material Task, a part of the Flat Plate Solar Array (FSA) Project, was to develop and demonstate the technology for the low cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. Summarized are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and Government researchers. The silane production section of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. The other process developments are described to varying extents. Studies are reported on the effects of impurities in silicon on both silicon-material properties and on solar cell performance. These studies on the effects of impurities yielded extensive information and models for relating specific elemental concentrations to levels of deleterious effects.

Silicon mediated biochemical changes in wheat under salinized and ...

African Journals Online (AJOL)

Silicon (Si) can alleviate salinity damage, a major threat to agriculture that causes instability in wheat production. We report on the effects of silicon (150 mg L-1) on the morphological, physiological and biochemical traits in wheat (Triticum aestivum L.) cultivars (salt sensitive; Auqab-2000 and salt tolerant; SARC-5) differing ...

A green preparation of Mn-based product with high purity from low-grade rhodochrosite

Science.gov (United States)

Lian, F.; Ma, L.; Chenli, Z.; Mao, L.

2018-01-01

The low-grade rhodochrosite, the main resources for exploitation and applications in China, contains multiple elements such as iron, silicon, calcium and magnesium. So the conventional preparation of manganese sulphate and manganese oxide with high purity from electrolytic product is characterized by long production-cycle, high-resource input and high-pollution discharge. In our work, a sustainable preparation approach of high pure MnSO4 solution and Mn3O4 was studied by employing low-grade rhodochrosite (13.86%) as raw material. The repeated leaching of rhodochrosite with sulphuric acid was proposed in view of the same ion effect, in order to improve the solubility of Mn2+ and inhibit the dissolution of the impurities Ca2+ and Mg2+. With the aid of theoretical calculation, BaF2 was chosen to remove Ca2+ and Mg2+ completely in the process of purifying. The results showed that the impurities such as Ca2+, Mg2+, Na+ were decreased to less than 20ppm, and the Ni- and Fe- impurities were decreased to less than 1ppm, which meets the standards of high pure reagent for energy and electronic materials. The extraction ratio and the recovery ratio of manganese reached 94.3% and 92.7%, respectively. Moreover, the high pure Mn3O4 was one-step synthesized via the oxidation of MnSO4 solution with the ratios of OH-/Mn2+=2 and Mn2+/H2O2=1.03, and the recovery rate of manganese reaches 99%.

Combined Effects of Phytoestrogen Genistein and Silicon on Ovariectomy-Induced Bone Loss in Rat.

Science.gov (United States)

Qi, Shanshan; Zheng, Hongxing

2017-06-01

This study was performed to evaluate the effect of concomitant supplementation of genistein and silicon on bone mineral density and bone metabolism-related markers in ovariectomized rat. Three-month-old Sprague Dawley female rats were subjected to bilateral ovariectomy (OVX) or sham surgery, and then the OVX rats were randomly divided into four groups: OVX-GEN, OVX-Si, OVX-GEN-Si, and OVX. Genistein and silicon supplementation was started immediately after OVX and continued for 10 weeks. In the OVX-GEN group, 5 mg genistein per gram body weight was injected subcutaneously. The OVX-Si group was given soluble silicon daily in demineralized water (Si 20 mg/kg body weight/day). The OVX-GEN-Si group was given subcutaneous injections of 5 mg genistein per gram body weight, at the same time, given soluble silicon daily (Si 20 mg/kg body weight/day). The results showed that the genistein supplementation in the OVX rats significantly prevented the loss of uterus weight; however, the silicon supplementation showed no effect on the uterus weight loss. The lumbar spine and femur bone mineral density was significantly decreased after OVX surgery; however, this decrease was inhibited by the genistein and/or silicon, and the BMD of the lumbar spine and femur was the highest in the OVX-GEN-Si-treated group. Histomorphometric analyses showed that the supplementation of genistein and/or silicon restored bone volume and trabecular thickness of femoral trabecular bone in the OVX group. Besides, the treatment with genistein and silicon for 10 weeks increased the serum levels of calcium and phosphorus in the OVX rats; serum calcium and serum phosphorus in the OVX-GEN-Si group were higher than those in the OVX-GEN and OVX-Si group (P silicon decreased serum alkaline phosphatase (ALP) and osteocalcin, which were increased by ovariectomy; serum ALP and osteocalcin in the OVX-GEN-Si group were lower than those in the OVX-GEN and OVX-Si groups (P silicon have synergistic effects on

Release of low molecular weight silicones and platinum from silicone breast implants.

Science.gov (United States)

Lykissa, E D; Kala, S V; Hurley, J B; Lebovitz, R M

1997-12-01

We have conducted a series of studies addressing the chemical composition of silicone gels from breast implants as well as the diffusion of low molecular weight silicones (LM-silicones) and heavy metals from intact implants into various surrounding media, namely, lipid-rich medium (soy oil), aqueous tissue culture medium (modified Dulbecco's medium, DMEM), or an emulsion consisting of DMEM plus 10% soy oil. LM-silicones in both implants and surrounding media were detected and quantitated using gas chromatography (GC) coupled with atomic emission (GC-AED) as well as mass spectrometric (GC/MS) detectors, which can detect silicones in the nanogram range. Platinum, a catalyst used in the preparation of silicone gels, was detected and quantitated using inductive argon-coupled plasma/mass spectrometry (ICP-MS), which can detect platinum in the parts per trillion range. Our results indicate that GC-detectable low molecular weight silicones contribute approximately 1-2% to the total gel mass and consist predominantly of cyclic and linear poly-(dimethylsiloxanes) ranging from 3 to 20 siloxane [(CH3)2-Si-O] units (molecular weight 200-1500). Platinum can be detected in implant gels at levels of approximately 700 micrograms/kg by ICP-MS. The major component of implant gels appears to be high molecular weight silicone polymers (HM-silicones) too large to be detected by GC. However, these HM-silicones can be converted almost quantitatively (80% by mass) to LM-silicones by heating implant gels at 150-180 degrees C for several hours. We also studied the rates at which LM-silicones and platinum leak through the intact implant outer shell into the surrounding media under a variety of conditions. Leakage of silicones was greatest when the surrounding medium was lipid-rich, and up to 10 mg/day LM-silicones was observed to diffuse into a lipid-rich medium per 250 g of implant at 37 degrees C. This rate of leakage was maintained over a 7-day experimental period. Similarly, platinum was

Effect of the pretreatment of silicone penetrant on the performance of the chromium-free chemfilm coated on AZ91D magnesium alloys

International Nuclear Information System (INIS)

Chang, Shiuan-Ho; Niu, Liyuan; Su, Yichang; Wang, Wenquan; Tong, Xian; Li, Guangyu

2016-01-01

This paper reported a new pretreatment of silicone penetrant for forming the chromium-free chemfilm (chemical conversion coating) on the surface of an AZ91D magnesium (Mg) alloy. Through applying micro current on the pretreatment solution, an uniform mask membrane was created on the surface of a Mg alloy. By using X-ray diffraction (XRD), scanning electron microscope (SEM), and Energy Dispersive Spectrometer (EDS) analyses, the chromium-free chemfilm on a Mg alloy was examined to analyze the performance during initial, middle, and final deposition periods. As a result, the pretreatment of silicone penetrant can effectively prevent the chemfilm from cracking, improve the anticorrosion ability and nucleation rate of the chromium-free chemfilm on a Mg alloy, and make the surface crystallization transform a long strip into short axis shape. - Highlights: • An AZ91D Mg alloy was pretreated by using silicone penetrant. • Surface crystallization of the chemfilm on a silicone-pretreated Mg alloy is smooth. • The pretreatment of silicone penetrant for a Mg alloy enhanced the anticorrosion ability.

Effect of the pretreatment of silicone penetrant on the performance of the chromium-free chemfilm coated on AZ91D magnesium alloys

Energy Technology Data Exchange (ETDEWEB)

Chang, Shiuan-Ho, E-mail: 1802186169@qq.com [College of Electronic Information and Mechatronic Engineering, Zhaoqing University, Zhaoqing Road, Duanzhou District, Zhaoqing, Guangdong, 526061 (China); Niu, Liyuan [Department of Material Engineer, Zhejiang Industry & Trade Vocational Colledge, WenZhou, 325000 (China); Su, Yichang [Department of Material Engineer, Zhejiang Industry & Trade Vocational Colledge, WenZhou, 325000 (China); College of Materials Science and Engineering, Jilin University, Nanling Campus, Changchun, 130025 (China); Wang, Wenquan [College of Materials Science and Engineering, Jilin University, Nanling Campus, Changchun, 130025 (China); Tong, Xian [Department of Material Engineer, Zhejiang Industry & Trade Vocational Colledge, WenZhou, 325000 (China); Li, Guangyu [College of Materials Science and Engineering, Jilin University, Nanling Campus, Changchun, 130025 (China)

2016-03-01

This paper reported a new pretreatment of silicone penetrant for forming the chromium-free chemfilm (chemical conversion coating) on the surface of an AZ91D magnesium (Mg) alloy. Through applying micro current on the pretreatment solution, an uniform mask membrane was created on the surface of a Mg alloy. By using X-ray diffraction (XRD), scanning electron microscope (SEM), and Energy Dispersive Spectrometer (EDS) analyses, the chromium-free chemfilm on a Mg alloy was examined to analyze the performance during initial, middle, and final deposition periods. As a result, the pretreatment of silicone penetrant can effectively prevent the chemfilm from cracking, improve the anticorrosion ability and nucleation rate of the chromium-free chemfilm on a Mg alloy, and make the surface crystallization transform a long strip into short axis shape. - Highlights: • An AZ91D Mg alloy was pretreated by using silicone penetrant. • Surface crystallization of the chemfilm on a silicone-pretreated Mg alloy is smooth. • The pretreatment of silicone penetrant for a Mg alloy enhanced the anticorrosion ability.

Production of rare earth-silicon-iron alloys

International Nuclear Information System (INIS)

Mehra, O.K.; Bose, D.K.; Gupta, C.K.

1987-01-01

At Metallurgy Division, BARC, improved procedures for producing rare earth-silicon alloys have been investigated. In these methods, reduction of mixed rare earth oxide by a ferro-silicon and aluminium mixture in combination with CaO-MgO flux/CaO-CaF 2 flux have been tried to prepare an alloy product with a higher rare earth recovery at a higher rare earth content than the present commercial production method. The rare earth recovery using CaO-CaF 2 was 85 per cent while in the case of CaO-MgO flux it was 76 per cent. The corresponding rare earth contents in the alloy correspond to 40 per cent and 55 per cent by weight respectively. (author)

Heteroepitaxial growth of In{sub 0.30}Ga{sub 0.70}As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

Energy Technology Data Exchange (ETDEWEB)

Kohen, David, E-mail: david.kohen@asm.com; Nguyen, Xuan Sang; Made, Riko I; Lee, Kwang Hong; Lee, Kenneth Eng Kian [Low Energy Electronic Systems IRG (LEES), Singapore-MIT Alliance for Research and Technology, 1 CREATE Way, Singapore 138602 (Singapore); Yadav, Sachin; Kumar, Annie; Gong, Xiao; Yeo, Yee Chia [National University of Singapore, 21 Lower Kent Ridge Rd, Singapore 119077 (Singapore); Heidelberger, Christopher [Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139 (United States); Yoon, Soon Fatt [Low Energy Electronic Systems IRG (LEES), Singapore-MIT Alliance for Research and Technology, 1 CREATE Way, Singapore 138602 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Fitzgerald, Eugene A. [Low Energy Electronic Systems IRG (LEES), Singapore-MIT Alliance for Research and Technology, 1 CREATE Way, Singapore 138602 (Singapore); Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139 (United States)

2016-08-15

We report on the growth of an In{sub 0.30}Ga{sub 0.70}As channel high-electron mobility transistor (HEMT) on a 200 mm silicon wafer by metal organic vapor phase epitaxy. By using a 3 μm thick buffer comprising a Ge layer, a GaAs layer and an InAlAs compositionally graded strain relaxing buffer, we achieve threading dislocation density of (1.0 ± 0.3) × 10{sup 7} cm{sup −2} with a surface roughness of 10 nm RMS. No phase separation was observed during the InAlAs compositionally graded buffer layer growth. 1.4 μm long channel length transistors are fabricated from the wafer with I{sub DS} of 70 μA/μm and g{sub m} of above 60 μS/μm, demonstrating the high quality of the grown materials.

Simultaneous Purification and Perforation of Low-Grade Si Sources for Lithium-Ion Battery Anode.

Science.gov (United States)

Jin, Yan; Zhang, Su; Zhu, Bin; Tan, Yingling; Hu, Xiaozhen; Zong, Linqi; Zhu, Jia

2015-11-11

Silicon is regarded as one of the most promising candidates for lithium-ion battery anodes because of its abundance and high theoretical capacity. Various silicon nanostructures have been heavily investigated to improve electrochemical performance by addressing issues related to structure fracture and unstable solid-electrolyte interphase (SEI). However, to further enable widespread applications, scalable and cost-effective processes need to be developed to produce these nanostructures at large quantity with finely controlled structures and morphologies. In this study, we develop a scalable and low cost process to produce porous silicon directly from low grade silicon through ball-milling and modified metal-assisted chemical etching. The morphology of porous silicon can be drastically changed from porous-network to nanowire-array by adjusting the component in reaction solutions. Meanwhile, this perforation process can also effectively remove the impurities and, therefore, increase Si purity (up to 99.4%) significantly from low-grade and low-cost ferrosilicon (purity of 83.4%) sources. The electrochemical examinations indicate that these porous silicon structures with carbon treatment can deliver a stable capacity of 1287 mAh g(-1) over 100 cycles at a current density of 2 A g(-1). This type of purified porous silicon with finely controlled morphology, produced by a scalable and cost-effective fabrication process, can also serve as promising candidates for many other energy applications, such as thermoelectrics and solar energy conversion devices.

Effect of magnesium content on the microstructure and dry sliding wear behavior of centrifugally cast functionally graded A356-Mg2Si in situ composites

Science.gov (United States)

Ram, Subhash Chandra; Chattopadhyay, K.; Chakrabarty, I.

2018-04-01

Functionally graded A356 alloy (Al–7.2Si–0.3Mg) –Mg2Si in situ composites have been synthesized via centrifugal casting route. Mg2Si particles tend to migrate towards the core of the tubular product by centrifugal force. The in situ formed Mg2Si particles in composites are characterized by x-ray diffraction (XRD) analysis, Energy dispersive spectrometry (EDS), Optical, Scanning Electron and Transmission Electron Microscopy. Apart from primary blocky Mg2Si particles the matrix contains other phases viz. Al-Si eutectic, pseudo-binary Al-Mg2Si eutectic and Al-Fe-Si intermetallics. Density is found to decrease and %porosity is increased with increase in volume fraction of Mg2Si. Maximum hardness was observed at the inner core region due to maximum segregation of Mg2Si particles and gradually decreases towards the outer periphery region. The dry sliding wear was evaluated with varying parameters such as normal loads (N) and sliding distances (m). A substantial increase in wear resistance at the inner core region is observed. From the worn surface characterization, the wear mechanisms have been explained.

Determination of phosphorus in semiconductor grade silicon by neutron activation analysis

International Nuclear Information System (INIS)

Jaskolska, H.; Rowinska, L.

1975-01-01

A method of determination of phosphorus in silicon has been elaborated. The separation of phosphorus is based on the extraction of phosphomolybdic complex in the presence of hold-back carriers of Ta and Au. Contamination factors for various impurities were determined. The lower limit of determination equals 3.10 -11 g P. Types of errors in the determination of concentration profiles are discussed. The method meets the following requirements: 1./ It ensures good separation of phosphorus from elements occuring in silicon plates (i.e. Ta, Au, Sn, Ge, Ce, Sb, As, Cu, and Na). 2./ It ensures high chemical yield of phosphorus separation. 3./ It ensures high efficiency of the measurement of 32 P β-activity. 4./ It is simple and rapid, since, for the determination of a implantation profile, it is necessary to analyse several tens of layers. (T.G.)

Aging temperature and abrasive wear behaviour of cast Al-(4%, 12%, 20%)Si-0.3% Mg alloys

International Nuclear Information System (INIS)

Shah, K.B.; Kumar, Sandeep; Dwivedi, D.K.

2007-01-01

In the present paper, influence of aging temperature during artificial age hardening treatment (T 6 ) of cast Al-(4, 12, 20%)Si-0.3% Mg on abrasive wear behaviour has been reported. Alloys were prepared by controlled melting and casting. Cast alloys were given age hardening treatment having sequence of solutionizing, quenching and artificial aging. All the alloys were solutionized at 510 deg. C for 8 h followed by water quenching (30 deg. C) and aging hardening at 150, 170, 190, 210 and 230 deg. C for 12 h. Abrasive wear tests were conducted against of 320 grade SiC abrasive medium at 5 and 10 N normal loads. It was observed that the silicon content and aging temperature significantly affect the wear resistance. Increase in aging temperature improves the wear resistance. Hypereutectic alloy showed better wear resistance than the eutectic alloy under identical conditions. Optical microstructure study of alloys under investigation has shown that cast dendritic structure is destroyed besides the spheroidization of eutectic silicon crystals after the heat treatment. The extent of change in structure depends on aging temperature. Scanning electron microscopy (SEM) of wear surface was carried to analyze the wear mechanism

Photoacoustic study of nanocrystalline silicon produced by mechanical grinding

Energy Technology Data Exchange (ETDEWEB)

Poffo, C.M. [Departamento de Engenharia Mecanica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Lima, J.C. de, E-mail: fsc1jcd@fisica.ufsc.b [Departamento de Fisica, Universidade Federal de Santa Catarina, Campus Trindade, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Souza, S.M.; Triches, D.M. [Departamento de Engenharia Mecanica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Grandi, T.A. [Departamento de Fisica, Universidade Federal de Santa Catarina, Campus Trindade, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Biasi, R.S. de [Secao de Engenharia Mecanica e de Materiais, Instituto Militar de Engenharia, 22290-270 Rio de Janeiro, RJ (Brazil)

2011-04-01

Mechanical grinding (MG) was used to produce nanocrystalline silicon and its thermal and transport properties were investigated by photoacoustic absorption spectroscopy (PAS). The experimental results suggest that in as-milled nanocrystalline silicon for 10 h the heat transfer through the crystalline and interfacial components is similar, and after annealed at 470 {sup o}C the heat transfer is controlled by crystalline component.

Photoacoustic study of nanocrystalline silicon produced by mechanical grinding

International Nuclear Information System (INIS)

Poffo, C.M.; Lima, J.C. de; Souza, S.M.; Triches, D.M.; Grandi, T.A.; Biasi, R.S. de

2011-01-01

Mechanical grinding (MG) was used to produce nanocrystalline silicon and its thermal and transport properties were investigated by photoacoustic absorption spectroscopy (PAS). The experimental results suggest that in as-milled nanocrystalline silicon for 10 h the heat transfer through the crystalline and interfacial components is similar, and after annealed at 470 o C the heat transfer is controlled by crystalline component.

Preparation and characterization of a calcium-phosphate-silicon coating on a Mg-Zn-Ca alloy via two-step micro-arc oxidation.

Science.gov (United States)

Dou, Jinhe; Chen, Yang; Chi, Yiming; Li, Huancai; Gu, Guochao; Chen, Chuanzhong

2017-06-14

Magnesium alloys are the most promising implant materials due to their excellent biodegradability. However, their high degradation rate limits their practical application. In this study, we produced a calcium-phosphate (Ca-P) coating and a calcium-phosphate-silicon (Ca-P-Si) coating via one-step and two-step micro-arc oxidation processes, respectively. The microstructure and chemical composition of the MAO coatings were characterized using SEM, XRD and EDS. The degradation behaviors of the MAO coatings and the substrate were investigated using electrochemical techniques and immersion tests in simulated body fluid (SBF). The results show that the silicate was successfully incorporated into the Ca-P coating in the second MAO step, and this also increased the thickness of the coating. The Ca-P-Si coatings remarkably reduced the corrosion rate of the Mg alloy and Ca-P coating during 18 days of immersion in SBF. In addition, the bone-like apatite layer on the sample surface demonstrated the good biomineralization ability of the Ca-P-Si coating. Potentiodynamic polarization results showed that the MAO coating could clearly enhance the corrosion resistance of the Mg alloy. Moreover, we propose the growth mechanism of the MAO coating in the second step.

Low-grade liquid silicone injections as a penile enhancement procedure: Is bigger better?

Directory of Open Access Journals (Sweden)

Ramesh Sasidaran

2012-01-01

Full Text Available To report our experience with 5 cases of complications of penile enhancement procedures secondary to liquid silicone injections and our method of management of its debilitating effects. All five patients were treated with excision of penile shaft skin down to buck′s fascia followed by resurfacing with split thickness skin grafting. We conclude that penile enhancement procedures with liquid silicone by non-medical personnel could result in devastating consequences. We also demonstrate that a simple method of excision of the entire penile shaft skin and resurfacing with split skin grafting showed improvement in cosmetic as well as functional outcome.

Plasma texturing on large-area industrial grade CZ silicon solar cells

DEFF Research Database (Denmark)

Davidsen, Rasmus Schmidt; Nordseth, Ørnulf; Schmidt, Michael Stenbæk

2013-01-01

We report on an experimental study of nanostructuring of silicon solar cells using reactive ion etching (RIE). A simple mask-less, scalable RIE nanostructuring of the solar cell surface is shown to reduce the AM1.5-weighted average reflectance to a level below 1 % in a fully optimized RIE texturi...

Silicon in Imperata cylindrica (L.) P. Beauv: content, distribution, and ultrastructure.

Science.gov (United States)

Rufo, Lourdes; Franco, Alejandro; de la Fuente, Vicenta

2014-07-01

Silicon concentration, distribution, and ultrastructure of silicon deposits in the Poaceae Imperata cylindrica (L.) P. Beauv. have been studied. This grass, known for its medicinal uses and also for Fe hyperaccumulation and biomineralization capacities, showed a concentration of silicon of 13,705 ± 9,607 mg/kg dry weight. Silicon was found as an important constituent of cell walls of the epidermis of the whole plant. Silica deposits were found in silica bodies, endodermis, and different cells with silicon-collapsed lumen as bulliforms, cortical, and sclerenchyma cells. Transmission electron microscope observations of these deposits revealed an amorphous material of an ultrastructure similar to that previously reported in silica bodies of other Poaceae.

Damage effects and mechanisms of proton irradiation on methyl silicone rubber

International Nuclear Information System (INIS)

Zhang, L.X.; He, Sh.Y.; Xu, Zh.; Wei, Q.

2004-01-01

A study was performed on the damage effects and mechanisms of proton irradiation with 150 keV energy to space-grade methyl silicone rubber. The changes in surface morphology, mechanical properties, infrared attenuated total reflection (ATR) spectrum, mass spectrum and pyrolysis gas chromatography-mass spectrum (PYGC-MS) indicated that, under lower fluence, the proton radiation would induce cross-linking effect, resulting in an increase in tensile strengths and hardness of the methyl silicon rubber. However, under higher proton fluence, the radiation-induced degradation, which decreased the tensile strengths and hardness, became a dominant effect. A macromolecular-network destruction model for the silicone rubber radiated with the protons was proposed

Update on the possible nutritional importance of silicon.

Science.gov (United States)

Nielsen, Forrest H

2014-10-01

Convincing evidence that silicon is a bioactive beneficial trace element continues to accumulate. The evidence, which has come from human, animal, and in vitro studies performed by several laboratories, indicate that silicon in nutritional and supra nutritional amounts promotes bone and connective tissue health, may have a modulating effect on the immune or inflammatory response, and has been associated with mental health. A plausible mechanism of action for the beneficial effects of silicon is the binding of hydroxyl groups of polyols such that it influences the formation and/or utilization of glycosaminoglycans, mucopolysaccharides, and collagen in connective tissue and bone. In addition, silicon may affect the absorption, retention or action of other mineral elements (e.g., aluminum, copper, magnesium). Based on findings from both animal and human experiments, an intake of silicon of near 25mg/d would be a reasonable suggestion for an adequate intake that would assure its nutritional benefits. Increased intakes of silicon through consuming unrefined grains, certain vegetables, and beverages and cereals made from grains should be recognized as a reasonable dietary recommendation. Published by Elsevier GmbH.

Thermodynamics of Boron Removal from Silicon Using CaO-MgO-Al2O3-SiO2 Slags

Science.gov (United States)

Jakobsson, Lars Klemet; Tangstad, Merete

2018-04-01

Slag refining is one of few metallurgical methods for removal of boron from silicon. It is important to know the thermodynamic properties of boron in slags to understand the refining process. The relation of the distribution coefficient of boron to the activity of silica, partial pressure of oxygen, and capacity of slags for boron oxide was investigated. The link between these parameters explains why the distribution coefficient of boron does not change much with changing slag composition. In addition, the thermodynamic properties of dilute boron oxide in CaO-MgO-Al2O3-SiO2 slags was determined. The ratio of the activity coefficient of boron oxide and silica was found to be the most important parameter for understanding changes in the distribution coefficient of boron for different slags. Finally, the relation between the activity coefficient of boron oxide and slag structure was investigated. It was found that the structure can explain how the distribution coefficient of boron changes depending on slag composition.

Development of technology of complex aluminum-silicon-chrome alloy with utilization of off grade raw materials

Directory of Open Access Journals (Sweden)

A. Mekhtiev

2015-01-01

Full Text Available Experimental studies on obtaining a complex aluminum-silicon-chrome alloy (FASCh from Karaganda high-ash coals and high-carbon ferrochromefines were carried out. A method for smelting low-carbon ferrochrome using aluminum-silicon-chrome alloy as a reductant is suggested.

Silicon is in short supply for the growth in solar cell production

International Nuclear Information System (INIS)

Halvorsen, Finn

2003-01-01

Polycrystalline silicon will be in short supply by 2006. This is the conclusion of two independent studies, one done for the European Union and one for the Photovoltaic Industry Association. The most important reason is the rapid growth in the solar cell market, which is expected to be about 15 per cent per year until 2010. If so, the world's solar cell manufacturers will need 8,000 tonnes of pure silicon at that time. This growth presupposes that the price of silicon does not rise, but it readily might. Because the general situation for the semiconductor industry has been difficult, silicon has been readily available to the manufacturers of solar cells in recent years. This is true of discard, which has always been used for solar cells, but also of silicon that was intended to become microprocessors, storage chips and other advanced semiconductor devices. As the semiconductor market improves, the amount of silicon from this source will shrink. Manufacturers of solar cells cannot afford to pay as much as the semiconductor manufacturers, and some consider making solar cell grade silicon themselves

Study of optical and luminescence properties of silicon — semiconducting silicide — silicon multilayer nanostructures

International Nuclear Information System (INIS)

Galkin, N.G.; Galkin, K.N.; Dotsenko, S.A.; Goroshko, D.L.; Shevlyagin, A.V.; Chusovitin, E.A.; Chernev, I.M.

2017-01-01

By method of in situ differential spectroscopy it was established that at the formation of monolayer Fe, Cr, Ca, Mg silicide and Mg stannide islands on the atomically clean silicon surface an appearance of loss peaks characteristic for these materials in the energy range of 1.1-2.6 eV is observed. An optimization of growth processes permit to grow monolithic double nanoheterostructures (DNHS) with embedded Fe, Cr and Ca nanocrystals, and also polycrystalline DNHS with NC of Mg silicide and Mg stannide and Ca disilicide. By methods of optical spectroscopy and Raman spectroscopy it was shown that embedded NC form intensive peaks in the reflectance spectra at energies up to 2.5 eV and Raman peaks. In DNS with β-FeSi2 NC a photoluminescence and electroluminescence at room temperature were firstly observed.

Electro-optical properties of dislocations in silicon and their possible application for light emitters

Energy Technology Data Exchange (ETDEWEB)

Arguirov, Tzanimir Vladimirov

2007-10-14

This thesis addresses the electro-optical properties of silicon, containing dislocations. The work demonstrates that dislocation specific radiation may provide a means for optical diagnostics of solar cell grade silicon. It provides insight into the mechanisms governing the dislocation recombination activity, their radiation, and how are they influenced by other defects present in silicon. We demonstrate that photoluminescence mapping is useful for monitoring the recombination activity in solar cell grade silicon and can be applied for identification of contaminants, based on their photoluminescence signatures. It is shown that the recombination at dislocations is strongly influenced by the presence of metals at the dislocation sites. The dislocation radiation activity correlates with their electrical activity. It is shown that the dislocation and band-to-band luminescence are essentially anti-correlated. {beta}FeSi{sub 2} precipitates, with a luminescence at 0.8 eV, were detected within the grains of block cast materials. They exhibit a characteristic feature of quantum dots, namely blinking. The second aspect of the thesis concerns the topic of silicon based light emitters for on-chip optical interconnects. The goal is an enhancement of sub-band-gap or band-to-band radiation by controlled formation of dislocation-rich areas in microelectronics-grade silicon as well as understanding of the processes governing such enhancement. For light emitters based on band-to-band emission it is shown, that internal quantum efficiency of nearly 2 % can be achieved, but the emission is essentially generated in the bulk of the wafer. On the other hand, light emitters utilizing the emission from dislocation-rich areas of a well localized wafer depth were explored. Three different methods for reproducible formation of a dislocation-rich region beneath the wafer surface were investigated and evaluated in view of their room temperature sub-band-gap radiation: (1) silicon implantation

Low cost silicon solar array project: Feasibility of low-cost, high-volume production of silane and pyrolysis of silane to semiconductor-grade silicon

Science.gov (United States)

Breneman, W. C.

1978-01-01

Silicon epitaxy analysis of silane produced in the Process Development Unit operating in a completely integrated mode consuming only hydrogen and metallurgical silicon resulted in film resistivities of up to 120 ohms cm N type. Preliminary kinetic studies of dichlorosilane disproportionation in the liquid phase have shown that 11.59% SiH4 is formed at equilibrium after 12 minutes contact time at 56 C. The fluid-bed reactor was operated continuously for 48 hours with a mixture of one percent silane in helium as the fluidizing gas. A high silane pyrolysis efficiency was obtained without the generation of excessive fines. Gas flow conditions near the base of the reactor were unfavorable for maintaining a bubbling bed with good heat transfer characteristics. Consequently, a porous agglomerate formed in the lower portion of the reactor. Dense coherent plating was obtained on the silicon seed particles which had remained fluidizied throughout the experiment.

Silicon Nitride Antireflection Coatings for Photovoltaic Cells

Science.gov (United States)

Johnson, C.; Wydeven, T.; Donohoe, K.

1984-01-01

Chemical-vapor deposition adapted to yield graded index of refraction. Silicon nitride deposited in layers, refractive index of which decreases with distance away from cell/coating interface. Changing index of refraction allows adjustment of spectral transmittance for wavelengths which cell is most effective at converting light to electric current. Average conversion efficiency of solar cells increased from 8.84 percent to 12.63 percent.

Determination of aluminium, silicon and magnesium content in water samples by nuclear physical methods using XRFA and the MT-25 microtron

International Nuclear Information System (INIS)

Maslov, O.D.; Gustova, M.V.; Belov, A.G.; Drobina, T.P.

2011-01-01

Some of element contents in the samples have been determined by nuclear physical methods (XRFA, GAA and NAA). The possibility of determining Al, Si and Mg content in water samples has been studied. The detection limits of 0.03 mg/1 for Al, 0.3 mg/1 for Si and 0.1 mg/1 for Mg in water samples have been obtained. Monitoring of the aluminium and silicon content in water is important because the high concentration of aluminium or the low content of silicon in drinking water may be risk factors for Alzheimer's disease

Electronic structure of deep levels in silicon. A study of gold, magnesium, and iron centers in silicon

International Nuclear Information System (INIS)

Thilderkvist, A. L.

1994-02-01

The electronic structure of gold, magnesium and iron related deep centers in silicon is investigated. Their deep and shallow levels are studied by means of fourier transform spectroscopy, combined with uniaxial stress and Zeeman spectroscopy. The neutral substitutional gold center in silicon is investigated and the center is paramagnetic, S=1/2, with g||≅2.8 and g≅0, and has a static distortion. Reorientation between different equivalent distortions is observed even at 1.9 K. A gold pair center in silicon is studied and several line series, with a zero-phonon line followed by several phonon replicas, are observed. Uniaxial stress and Zeeman results reveal a trigonal symmetry of the center, which together with the high dissociation energy of 1.7 eV suggests that the center consists of two nearest-neighbor substitutional gold atoms. A divacancy model is employed to explain the electronic properties of the center. The interstitial magnesium double donor in silicon in its two charge states Mg o and Mg + is investigated. Deviations in the binding energies of the excited states from those calculated within the effective-mass theory (EMT) are found and explained by a perturbation in the central-cell region. The quadratic Zeeman effect of shallow donors in silicon is analyzed within the framework of the EMT using a numerical approach. The wave functions are calculated in a discrete radial mesh and the Zeeman Hamiltonian has be evaluated for the lowest excited states for fields up to 6 T. The neutral interstitial iron defect in silicon gives rise to two sets of line spectra. The first set arises when an electron is excited to a shallow donor like state where the electron is decoupled from the Fe + core which has a 4 T 1 ground state term. The second set arises when an excited electron of a 1 symmetry is coupled by exchange interaction to the core, yielding at 5 T 1 final state. Experiments determine the multiplet splitting of the 4 T 1 and 5 T 1 states due to spring

Making MgO/SiO2 Glasses By The Sol-Gel Process

Science.gov (United States)

Bansal, Narottam P.

1989-01-01

Silicon dioxide glasses containing 15 mole percent magnesium oxide prepared by sol-gel process. Not made by conventional melting because ingredients immiscible liquids. Synthesis of MgO/SiO2 glass starts with mixing of magnesium nitrate hexahydrate with silicon tetraethoxide, both in alcohol. Water added, and transparent gel forms. Subsequent processing converts gel into glass. Besides producing glasses of new composition at lower processing temperatures, sol-gel method leads to improved homogeneity and higher purity.

Deposition, characterization, and in vivo performance of parylene coating on general-purpose silicone for examining potential biocompatible surface modifications

Energy Technology Data Exchange (ETDEWEB)

Chou, Chia-Man [Division of Pediatric Surgery, Department of Surgery, Taichung Veterans General Hospital, 160, Sec. 3, Taichung Port Rd., Taichung 40705, Taiwan, ROC (China); Department of Medicine, National Yang-Ming University, 155, Sec. 2, Linong Street, Taipei 11221, Taiwan, ROC (China); Shiao, Chiao-Ju [Department of Materials Science and Engineering, Feng Chia University, 100, Wen-Hwa Rd., Taichung 40724, Taiwan, ROC (China); Chung, Chi-Jen, E-mail: cjchung@seed.net.tw [Department of Dental Technology and Materials Science, Central Taiwan University of Science and Technology, 666 Buzih Rd., Beitun District, Taichung 40601, Taiwan, ROC (China); He, Ju-Liang [Department of Materials Science and Engineering, Feng Chia University, 100, Wen-Hwa Rd., Taichung 40724, Taiwan, ROC (China)

2013-12-31

In this study, a thorough investigation of parylene coatings was conducted, as follows: microstructure (i.e., X-ray diffractometer (XRD) and cold field emission scanning electron microscope (FESEM)), mechanical property (i.e., pencil hardness and cross-cut adhesion test), surface property (i.e., water contact angle measurement, IR, and X-ray photoelectron spectroscopy (XPS)), and biocompatibility tests (i.e., fibroblast cell culture, platelet adhesion, and animal studies). The results revealed that parylene, a crystalline and brittle coating, exhibited satisfactory film adhesion and relative hydrophobicity, thereby contributing to its effective barrier properties. Fibroblast cell culturing on the parylene-deposited specimen demonstrated improved cell proliferation and equivalent to or superior blood compatibility than that of the medical-grade silicone (currently used clinically). In the animal study, parylene coatings exhibited similar subcutaneous inflammatory reactions compared with the medical-grade silicone. Both in vitro and in vivo tests demonstrated the satisfactory biocompatibility of parylene coatings. - Highlights: • A complete investigation to identify the characteristics of parylene coatings on general-purpose silicones. • Microstructures, surface properties and mechanical properties of parylene coatings were examined. • In vitro (Cell culture, platelet adhesion) tests and animal studies revealed satisfactory biocompatibility. • An alternative of medical-grade silicones is expected to be obtained.

Deposition, characterization, and in vivo performance of parylene coating on general-purpose silicone for examining potential biocompatible surface modifications

International Nuclear Information System (INIS)

Chou, Chia-Man; Shiao, Chiao-Ju; Chung, Chi-Jen; He, Ju-Liang

2013-01-01

In this study, a thorough investigation of parylene coatings was conducted, as follows: microstructure (i.e., X-ray diffractometer (XRD) and cold field emission scanning electron microscope (FESEM)), mechanical property (i.e., pencil hardness and cross-cut adhesion test), surface property (i.e., water contact angle measurement, IR, and X-ray photoelectron spectroscopy (XPS)), and biocompatibility tests (i.e., fibroblast cell culture, platelet adhesion, and animal studies). The results revealed that parylene, a crystalline and brittle coating, exhibited satisfactory film adhesion and relative hydrophobicity, thereby contributing to its effective barrier properties. Fibroblast cell culturing on the parylene-deposited specimen demonstrated improved cell proliferation and equivalent to or superior blood compatibility than that of the medical-grade silicone (currently used clinically). In the animal study, parylene coatings exhibited similar subcutaneous inflammatory reactions compared with the medical-grade silicone. Both in vitro and in vivo tests demonstrated the satisfactory biocompatibility of parylene coatings. - Highlights: • A complete investigation to identify the characteristics of parylene coatings on general-purpose silicones. • Microstructures, surface properties and mechanical properties of parylene coatings were examined. • In vitro (Cell culture, platelet adhesion) tests and animal studies revealed satisfactory biocompatibility. • An alternative of medical-grade silicones is expected to be obtained

Lower reflectivity and higher minority carrier lifetime of hand-tailored porous silicon

International Nuclear Information System (INIS)

Zhang Nansheng; Ma Zhongquan; Zhou Chengyue; He Bo

2009-01-01

Solar cell grade crystalline silicon with very low reflectivity has been obtained by electrochemically selective erosion. The porous silicon (PS) structure with a mixture of nano- and micro-crystals shows good antireflection properties on the surface layer, which has potential for application in commercial silicon photovoltaic devices after optimization. The morphology and reflectivity of the PS layers are easily modulated by controlling the electrochemical formation conditions (i.e., the current density and the anodization time). It has been shown that much a lower reflectivity of approximately 1.42% in the range 380-1100 nm is realized by using optimized conditions. In addition, the minority carrier lifetime of the PS after removing the phosphorus silicon layer is measured to be ∼3.19 μs. These values are very close to the reflectivity and the minority carrier lifetime of Si 3 N 4 as a passivation layer on a bulk silicon-based solar cell (0.33% and 3.03 μs, respectively).

Properties of CMOS devices and circuits fabricated on high-resistivity, detector-grade silicon

International Nuclear Information System (INIS)

Holland, S.

1991-11-01

A CMOS process that is compatible with silicon p-i-n radiation detectors has been developed and characterized. A total of twelve mask layers are used in the process. The NMOS device is formed in a retrograde well while the PMOS device is fabricated directly in the high-resistivity silicon. Isolation characteristics are similar to a standard foundary CMOS process. Circuit performance using 3 μm design rules has been evaluated. The measured propagation delay and power-delay product for a 51-stage ring oscillator was 1.5 ns and 43 fJ, respectively. Measurements on a simple cascode amplifier results in a gain-bandwidth product of 200 MHz at a bias current of 15 μA. The input-referred noise of the cascode amplifier is 20 nV/√Hz at 1 MHz

Towards scalable binderless electrodes: carbon coated silicon nanofiber paper via Mg reduction of electrospun SiO2 nanofibers.

Science.gov (United States)

Favors, Zachary; Bay, Hamed Hosseini; Mutlu, Zafer; Ahmed, Kazi; Ionescu, Robert; Ye, Rachel; Ozkan, Mihrimah; Ozkan, Cengiz S

2015-02-06

The need for more energy dense and scalable Li-ion battery electrodes has become increasingly pressing with the ushering in of more powerful portable electronics and electric vehicles (EVs) requiring substantially longer range capabilities. Herein, we report on the first synthesis of nano-silicon paper electrodes synthesized via magnesiothermic reduction of electrospun SiO2 nanofiber paper produced by an in situ acid catalyzed polymerization of tetraethyl orthosilicate (TEOS) in-flight. Free-standing carbon-coated Si nanofiber binderless electrodes produce a capacity of 802 mAh g(-1) after 659 cycles with a Coulombic efficiency of 99.9%, which outperforms conventionally used slurry-prepared graphite anodes by over two times on an active material basis. Silicon nanofiber paper anodes offer a completely binder-free and Cu current collector-free approach to electrode fabrication with a silicon weight percent in excess of 80%. The absence of conductive powder additives, metallic current collectors, and polymer binders in addition to the high weight percent silicon all contribute to significantly increasing capacity at the cell level.

Effect of silicon content and defects on the lifetime of ductile cast iron

Directory of Open Access Journals (Sweden)

Alhussein Akram

2014-06-01

Full Text Available In this work, the influence of microstructure on the mechanical properties has been studied for different grades of ferritic ductile cast iron. Mechanical tests were carried out and the effect of silicon on the resistance of material was well noticed. An increasing silicon content increases the strength and decreases the ductility of material. The lifetime and endurance limit of material were affected by the presence of defects in material and microstructure heterogeneity. Metallurgical characterizations showed that the silicon was highly segregated around graphite nodules which leads to the initiation of cracks. The presence of defects causes the stress concentration and leads to the initiation and propagation of cracks.

Silicon induced improvement in morpho-physiological traits of maize (zea mays l.) under water deficit

International Nuclear Information System (INIS)

Amin, M.; Ahmad, R.; Basra, S.M.A.; Murtaza, G.

2014-01-01

Current water scarcity is an emerging issue in semi-arid regions like Pakistan and cause of deterioration in productivity of crops to reduce crop yield all over the world. Silicon is known to be better against the deleterious effects of drought on plant growth and development. A pot study was conducted to evaluate the effect of Si nutrition (0, 50, 100 and 150 mg/kg) on the growth of a relatively drought tolerant (P-33H25) and sensitive (FH-810) maize hybrids. Two levels of soil water content were used viz. 100 and 60% of field capacity. Water deficit condition in soil significantly reduced morphological and physiological attributes of maize plants. Silicon application significantly improved the plant height, leaf area per plant, primary root length, dry matter of shoot and roots and plant dry matter, water relation and gas exchange characteristics of both maize cultivars under water deficit condition. Poor growth of drought stressed plants was significantly improved with Si application. The silicon fertilized (100 mg/kg) drought stressed plants of hybrid P-33H25 produced maximum (21.68% more) plant dry matter as compared to plants that were not provided with silicon nutrition. Nonetheless, silicon application (150 mg/kg) resulted in maximum increase (26.03%) in plant dry weight of hybrid FH-810 plants that were grown under limited moisture supply i.e., 60% FC. In conclusion silicon application to drought stressed maize plants was better to improve the growth and dry matter could be attributed to improved osmotic adjustment, photosynthetic rate and lowered transpiration. (author)

Methods To Determine the Silicone Oil Layer Thickness in Sprayed-On Siliconized Syringes.

Science.gov (United States)

Loosli, Viviane; Germershaus, Oliver; Steinberg, Henrik; Dreher, Sascha; Grauschopf, Ulla; Funke, Stefanie

2018-01-01

The silicone lubricant layer in prefilled syringes has been investigated with regards to siliconization process performance, prefilled syringe functionality, and drug product attributes, such as subvisible particle levels, in several studies in the past. However, adequate methods to characterize the silicone oil layer thickness and distribution are limited, and systematic evaluation is missing. In this study, white light interferometry was evaluated to close this gap in method understanding. White light interferometry demonstrated a good accuracy of 93-99% for MgF 2 coated, curved standards covering a thickness range of 115-473 nm. Thickness measurements for sprayed-on siliconized prefilled syringes with different representative silicone oil distribution patterns (homogeneous, pronounced siliconization at flange or needle side, respectively) showed high instrument (0.5%) and analyst precision (4.1%). Different white light interferometry instrument parameters (autofocus, protective shield, syringe barrel dimensions input, type of non-siliconized syringe used as base reference) had no significant impact on the measured average layer thickness. The obtained values from white light interferometry applying a fully developed method (12 radial lines, 50 mm measurement distance, 50 measurements points) were in agreement with orthogonal results from combined white and laser interferometry and 3D-laser scanning microscopy. The investigated syringe batches (lot A and B) exhibited comparable longitudinal silicone oil layer thicknesses ranging from 170-190 nm to 90-100 nm from flange to tip and homogeneously distributed silicone layers over the syringe barrel circumference (110- 135 nm). Empty break-loose (4-4.5 N) and gliding forces (2-2.5 N) were comparably low for both analyzed syringe lots. A silicone oil layer thickness of 100-200 nm was thus sufficient for adequate functionality in this particular study. Filling the syringe with a surrogate solution including short

Determination of impurity distributions in ingots of solar grade silicon by neutron activation analysis

Energy Technology Data Exchange (ETDEWEB)

Karches, Barbara; Hampel, Gabriele; Plonka, Christian; Stieghorst, Christian; Wiehl, Norbert [Mainz Univ. (Germany). Inst. for Nuclear Chemistry; Schoen, Jonas; Krenckel, Patricia; Riepe, Stephan [Fraunhofer Institute for Solar Energy Systems, Freiburg (Germany); Gerstenberg, Heiko [Technische Univ. Muenchen, Garching (Germany). Heinz-Maier-Leibniz Zentrum; Ponsard, Bernard [Belgian Nuclear Research Centre (SCK CEN), Mol (Belgium). BR2 reactor

2017-09-01

In a series of crystallization experiments, the directional solidification of silicon was investigated as a low cost path for the production of silicon wafers for solar cells. Instrumental neutron activation analysis was employed to measure the influence of different crystallization parameters on the distribution of 3d-metal impurities of the produced ingots. A theoretical model describing the involved diffusion and segregation processes during the solidification and cooling of the ingots could be verified by the experimental results. By successive etching of the samples after the irradiation, it could be shown that a layer of at least 60 μm of the samples has to be removed to get real bulk concentrations.

Optimization of the Surface Structure on Black Silicon for Surface Passivation.

Science.gov (United States)

Jia, Xiaojie; Zhou, Chunlan; Wang, Wenjing

2017-12-01

Black silicon shows excellent anti-reflection and thus is extremely useful for photovoltaic applications. However, its high surface recombination velocity limits the efficiency of solar cells. In this paper, the effective minority carrier lifetime of black silicon is improved by optimizing metal-catalyzed chemical etching (MCCE) method, using an Al 2 O 3 thin film deposited by atomic layer deposition (ALD) as a passivation layer. Using the spray method to eliminate the impact on the rear side, single-side black silicon was obtained on n-type solar grade silicon wafers. Post-etch treatment with NH 4 OH/H 2 O 2 /H 2 O mixed solution not only smoothes the surface but also increases the effective minority lifetime from 161 μs of as-prepared wafer to 333 μs after cleaning. Moreover, adding illumination during the etching process results in an improvement in both the numerical value and the uniformity of the effective minority carrier lifetime.

Evaluation of selected chemical processes for production of low-cost silicon

Science.gov (United States)

Blocher, J. M., Jr.; Browning, M. F.; Wilson, W. J.; Carmichael, D. C.

1976-01-01

Plant construction costs and manufacturing costs were estimated for the production of solar-grade silicon by the reduction of silicon tetrachloride in a fluidized bed of seed particles, and several modifications of the iodide process using either thermal decomposition on heated filaments (rods) or hydrogen reduction in a fluidized bed of seed particles. Energy consumption data for the zinc reduction process and each of the iodide process options are given and all appear to be acceptable from the standpoint of energy pay back. Information is presented on the experimental zinc reduction of SiCl4 and electrolytic recovery of zinc from ZnCl2. All of the experimental work performed thus far has supported the initial assumption as to technical feasibility of producing semiconductor silicon by the zinc reduction or iodide processes proposed. The results of a more thorough thermodynamic evaluation of the iodination of silicon oxide/carbon mixtures are presented which explain apparent inconsistencies in an earlier cursory examination of the system.

Non-drainage scleral buckling with solid silicone elements

Directory of Open Access Journals (Sweden)

Pukhraj Rishi

2014-01-01

Full Text Available Background: With the increasing number of cataract surgeries, incidence of posterior segment complications including rhegmatogenous retinal detachment (RRD is likely to rise. Scleral buckling (SB surgery is an effective and less expensive option. The primary advantage of non-drainage procedure is avoidance of possible complications associated with trans-choroidal drainage. The aim of present study is to describe the clinical profile of subjects undergoing non-drainage SB surgery with solid silicone elements for RRD and analyze their treatment outcomes. Materials and Methods: This was a retrospective, non-randomized, interventional study at a tertiary care center. Three hundred and six eyes of 298 patients undergoing non-drainage SB surgery with solid silicone elements from year 2000 to 2006 were included. Inclusion criteria were primary RRD, peripheral depressible retinal break, media clarity affording peripheral retinal view and proliferative vitreo-retinopathy (PVR up to grade C2. Uni- and multivariate analyses was done to analyze factors affecting anatomical and visual outcomes. Statistical analysis was performed using SPSS Version 10. Results: Mean follow-up was 303 ± 393.33 days. Primary anatomical success was obtained in 279 (91.2% eyes; primary functional success in 286 (93.5% eyes. PVR (grade B or C, intraocular pressure <10 mm Hg and the inability to find a retinal break were significantly associated with final anatomical failure. Baseline vision ≤3/60 was significantly associated with poor visual recovery. Conclusions: SB surgery is reasonably safe and highly efficacious. Solid silicone elements are effective in non-drainage SB surgery. However, case selection is important.

Structural and optical properties of silicon rich oxide films in graded-stoichiometric multilayers for optoelectronic devices

Energy Technology Data Exchange (ETDEWEB)

Palacios-Huerta, L.; Aceves-Mijares, M. [Electronics Department, INAOE, Apdo. 51, Puebla, Pue. 72000, México (Mexico); Cabañas-Tay, S. A.; Cardona-Castro, M. A.; Morales-Sánchez, A., E-mail: alfredo.morales@cimav.edu.mx [Centro de Investigación en Materiales Avanzados S.C., Unidad Monterrey-PIIT, Apodaca, NL 66628, México (Mexico); Domínguez-Horna, C. [Instituto de Microelectrónica de Barcelona, IMB-CNM (CSIC), Bellaterra 08193, Barcelona (Spain)

2016-07-18

Silicon nanocrystals (Si-ncs) are excellent candidates for the development of optoelectronic devices. Nevertheless, different strategies are still necessary to enhance their photo and electroluminescent properties by controlling their structural and compositional properties. In this work, the effect of the stoichiometry and structure on the optical properties of silicon rich oxide (SRO) films in a multilayered (ML) structure is studied. SRO MLs with silicon excess gradually increased towards the top and bottom and towards the center of the ML produced through the variation of the stoichiometry in each SRO layer were fabricated and confirmed by X-ray photoelectron spectroscopy. Si-ncs with three main sizes were observed by a transmission electron microscope, in agreement with the stoichiometric profile of each SRO layer. The presence of the three sized Si-ncs and some oxygen related defects enhances intense violet/blue and red photoluminescence (PL) bands. The SRO MLs were super-enriched with additional excess silicon by Si{sup +} implantation, which enhanced the PL intensity. Oxygen-related defects and small Si-ncs (<2 nm) are mostly generated during ion implantation enhancing the violet/blue band to become comparable to the red band. The structural, compositional, and luminescent characteristics of the multilayers are the result of the contribution of the individual characteristics of each layer.

A bioactive metallurgical grade porous silicon-polytetrafluoroethylene sheet for guided bone regeneration applications.

Science.gov (United States)

Chadwick, E G; Clarkin, O M; Raghavendra, R; Tanner, D A

2014-01-01

The properties of porous silicon make it a promising material for a host of applications including drug delivery, molecular and cell-based biosensing, and tissue engineering. Porous silicon has previously shown its potential for the controlled release of pharmacological agents and in assisting bone healing. Hydroxyapatite, the principle constituent of bone, allows osteointegration in vivo, due to its chemical and physical similarities to bone. Synthetic hydroxyapatite is currently applied as a surface coating to medical devices and prosthetics, encouraging bone in-growth at their surface and improving osseointegration. This paper examines the potential for the use of an economically produced porous silicon particulate-polytetrafluoroethylene sheet for use as a guided bone regeneration device in periodontal and orthopaedic applications. The particulate sheet is comprised of a series of microparticles in a polytetrafluoroethylene matrix and is shown to produce a stable hydroxyapatite on its surface under simulated physiological conditions. The microstructure of the material is examined both before and after simulated body fluid experiments for a period of 1, 7, 14 and 30 days using Scanning Electron Microscopy. The composition is examined using a combination of Energy Dispersive X-ray Spectroscopy, Thin film X-ray diffraction, Attenuated Total Reflectance-Fourier Transform Infrared Spectroscopy and the uptake/release of constituents at the fluid-solid interface is explored using Inductively Coupled Plasma-Optical Emission Spectroscopy. Microstructural and compositional analysis reveals progressive growth of crystalline, 'bone-like' apatite on the surface of the material, indicating the likelihood of close bony apposition in vivo.

Aligned three-dimensional prismlike magnesium nanostructures realized onto silicon substrate

International Nuclear Information System (INIS)

Zhang Kaili; Rossi, Carole; Tenailleau, Christophe; Alphonse, Pierre

2008-01-01

A simple approach is proposed to realize three-dimensional (3D) prismlike Mg nanostructures, which has several advantages over previous investigations such as suitable for mass production, reduced impurities, tailored dimensions, and easier integration into microsystem. 3D Mg nanostructures are realized onto silicon substrate using a conventional thermal evaporator, where the incident angle of Mg vapor flux with respect to the substrate surface normal is fixed at 88 deg. The as-prepared 3D Mg nanostructures are characterized by scanning electron microscopy, x-ray diffraction, energy dispersive x-ray analysis, transmission electron microscopy, high-resolution transmission electron microscopy, and surface area measurement

Sub-micron silicon nitride waveguide fabrication using conventional optical lithography.

Science.gov (United States)

Huang, Yuewang; Zhao, Qiancheng; Kamyab, Lobna; Rostami, Ali; Capolino, Filippo; Boyraz, Ozdal

2015-03-09

We demonstrate a novel technique to fabricate sub-micron silicon nitride waveguides using conventional contact lithography with MEMS-grade photomasks. Potassium hydroxide anisotropic etching of silicon facilitates line reduction and roughness smoothing and is key to the technique. The fabricated waveguides is measured to have a propagation loss of 0.8dB/cm and nonlinear coefficient of γ = 0.3/W/m. A low anomalous dispersion of <100ps/nm/km is also predicted. This type of waveguide is highly suitable for nonlinear optics. The channels naturally formed on top of the waveguide also make it promising for plasmonics and quantum efficiency enhancement in sensing applications.

On the characterisation of the dynamic compressive behaviour of silicon carbides subjected to isentropic compression experiments

Directory of Open Access Journals (Sweden)

Zinszner Jean-Luc

2015-01-01

Full Text Available Ceramic materials are commonly used as protective materials particularly due to their very high hardness and compressive strength. However, the microstructure of a ceramic has a great influence on its compressive strength and on its ballistic efficiency. To study the influence of microstructural parameters on the dynamic compressive behaviour of silicon carbides, isentropic compression experiments have been performed on two silicon carbide grades using a high pulsed power generator called GEPI. Contrary to plate impact experiments, the use of the GEPI device and of the lagrangian analysis allows determining the whole loading path. The two SiC grades studied present different Hugoniot elastic limit (HEL due to their different microstructures. For these materials, the experimental technique allowed evaluating the evolution of the equivalent stress during the dynamic compression. It has been observed that these two grades present a work hardening more or less pronounced after the HEL. The densification of the material seems to have more influence on the HEL than the grain size.

Silicate fertilization of tropical soils: silicon availability and recovery index of sugarcane

Directory of Open Access Journals (Sweden)

Mônica Sartori de Camargo

2013-10-01

Full Text Available Sugarcane is considered a Si-accumulating plant, but in Brazil, where several soil types are used for cultivation, there is little information about silicon (Si fertilization. The objectives of this study were to evaluate the silicon availability, uptake and recovery index of Si from the applied silicate on tropical soils with and without silicate fertilization, in three crops. The experiments in pots (100 L were performed with specific Si rates (0, 185, 370 and 555 kg ha-1 Si, three soils (Quartzipsamment-Q, 6 % clay; Rhodic Hapludox-RH, 22 % clay; and Rhodic Acrudox-RA, 68 % clay, with four replications. The silicon source was Ca-Mg silicate. The same Ca and Mg quantities were applied to all pots, with lime and/or MgCl2, when necessary. Sugarcane was harvested in the plant cane and first- and second-ratoon crops. The silicon rates increased soil Si availability and Si uptake by sugarcane and had a strong residual effect. The contents of soluble Si were reduced by harvesting and increased with silicate application in the following decreasing order: Q>RH>RA. The silicate rates promoted an increase in soluble Si-acetic acid at harvest for all crops and in all soils, except RA. The amounts of Si-CaCl2 were not influenced by silicate in the ratoon crops. The plant Si uptake increased according to the Si rates and was highest in RA at all harvests. The recovery index of applied Si (RI of sugarcane increased over time, and was highest in RA.

Deposition of MgB2 Thin Films on Alumina-Buffered Si Substrates by using Hybrid Physical-Chemical Vapor Deposition Method

International Nuclear Information System (INIS)

Lee, T. G.; Park, S. W.; Seong, W. K.; Huh, J. Y.; Jung, S. G.; Kang, W. N.; Lee, B. K.; An, K. S.

2008-01-01

[ MgB 2 ] thin films were fabricated using hybrid physical-chemical vapor deposition (HPCVD) method on silicon substrates with buffers of alumina grown by using atomic layer deposition method. The growth war in a range of temperatures 500 - 600 degrees C and under the reactor pressures of 25 - 50 degrees C. There are some interfacial reactions in the as-grown films with impurities of mostly Mg 2 Si, MgAl 2 O 4 , and other phases. The T c 's of MgB 2 films were observed to be as high as 39 K, but the transition widths were increased with growth temperatures. The magnetization was measured as a function of temperature down to the temperature of 5 K, but the complete Meissner effect was not observed, which shows that the granular nature of weak links is prevailing. The formation of mostly Mg 2 Si impurity in HPCVD process is discussed, considering the diffusion and reaction of Mg vapor with silicon substrates.

Preparation and dielectric properties of compositionally graded lead barium zirconate thin films

Energy Technology Data Exchange (ETDEWEB)

Hao, Xihong, E-mail: xhhao@imust.edu.c [Functional Materials Research Laboratory, Tongji University, Shanghai 200092 (China); School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Baotou 014010 (China); Zhang, Zhiqing [School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Baotou 014010 (China); Zhou, Jing [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); An, Shengli [School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Baotou 014010 (China); Zhai, Jiwei [Functional Materials Research Laboratory, Tongji University, Shanghai 200092 (China)

2010-07-09

Both up and down compositionally graded (Pb{sub 1-x}Ba{sub x})ZrO{sub 3} (PBZ) thin films with increasing x from 0.4 to 0.6 were deposited on Pt(1 1 1)-buffer layered silicon substrates through a sol-gel method. The microstructure and dielectric properties of graded PBZ thin films were investigated systemically. X-ray diffraction patterns confirmed that both PBZ films had crystallized into a pure perovskite phase after annealed 700 {sup o}C. Electrical measurement results showed that although up graded films had a slightly larger tunability, dielectric loss of down graded films was much lower than that of up graded films. Therefore, the figure of merit of down graded PBZ films was greatly enhanced, as compared with up graded films. Moreover, down graded PBZ thin films also displayed excellent temperature stability with a smaller temperature coefficient of capacitance (TCC) of -0.59 x 10{sup -3} {sup o}C{sup -1} from 20 {sup o}C to 80 {sup o}C.

FY 1977 Annual report on Sunshine Project results. Research and development of photovoltaic power generation systems (Research and development of particle nonacceleration growth type silicon thin-film crystals); 1977 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Ryushi hikasoku seichogata silicon usumaku kessho no kenkyu kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1978-03-01

As part of the research and development project for producing photovoltaic power generation systems at reduced cost, the R and D efforts are made for producing particle nonacceleration growth type silicon thin-film crystals. The research items are (1) research on thin-film crystals, and (2) research on cell-structuring method. The item (1) studies quantities, types and electrical properties of impurities and crystal defects in the polycrystalline ingots, produced by the Czochralski method from metal grade silicon and purified metal grade silicon stocks. Next, the substrate prepared above is coated with a thin film of silicon by the vapor-phase growth method with dichlorosilane as the source, to evaluate the thin-film crystals by measuring the crystal defects and lifetime of small numbers of carriers. The item (2) studies the effects of the solder dipping method. In addition, unevenness of photoelectric current is analyzed by a laser scanning microscope, to investigate the effects of the secondary impurities and crystal defects in the substrate crystals on photoelectric current. As a result, it is found that conversion efficiency is improved by grading the hole concentration in the p-type activated layer. The targets of 10 to 20 m{sup 2} as the area and 7 to 8% as the conversion efficiency are attained by preparing the crystals again. (NEDO)

Bonding silicon nitride using glass-ceramic

International Nuclear Information System (INIS)

Dobedoe, R.S.

1995-01-01

Silicon nitride has been successfully bonded to itself using magnesium-aluminosilicate glass and glass-ceramic. For some samples, bonding was achieved using a diffusion bonder, but in other instances, following an initial degassing hold, higher temperatures were used in a nitrogen atmosphere with no applied load. For diffusion bonding, a small applied pressure at a temperature below which crystallisation occurs resulted in intimate contact. At slightly higher temperatures, the extent of the reaction at the interface and the microstructure of the glass-ceramic joint was highly sensitive to the bonding temperature. Bonding in a nitrogen atmosphere resulted in a solution-reprecipitation reaction. A thin layer of glass produced a ''dry'', glass-free joint, whilst a thicker layer resulted in a continuous glassy join across the interface. The chromium silicide impurities within the silicon nitride react with the nucleating agent in the glass ceramic, which may lead to difficulty in producing a fine glass-ceramic microstructure. Slightly lower temperatures in nitrogen resulted in a polycrystalline join but the interfacial contact was poor. It is hoped that one of the bonds produced may be developed to eventually form part of a graded joint between silicon nitride and a high temperature nickel alloy. (orig.)

Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

International Nuclear Information System (INIS)

Shuleiko, D V; Ilin, A S

2016-01-01

Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

Alternative Liquid Fuel Effects on Cooled Silicon Nitride Marine Gas Turbine Airfoils

Energy Technology Data Exchange (ETDEWEB)

Holowczak, J.

2002-03-01

With prior support from the Office of Naval Research, DARPA, and U.S. Department of Energy, United Technologies is developing and engine environment testing what we believe to be the first internally cooled silicon nitride ceramic turbine vane in the United States. The vanes are being developed for the FT8, an aeroderivative stationary/marine gas turbine. The current effort resulted in further manufacturing and development and prototyping by two U.S. based gas turbine grade silicon nitride component manufacturers, preliminary development of both alumina, and YTRIA based environmental barrier coatings (EBC's) and testing or ceramic vanes with an EBC coating.

Monitoring of degradation of porous silicon photonic crystals using digital photography

Science.gov (United States)

2014-01-01

We report the monitoring of porous silicon (pSi) degradation in aqueous solutions using a consumer-grade digital camera. To facilitate optical monitoring, the pSi samples were prepared as one-dimensional photonic crystals (rugate filters) by electrochemical etching of highly doped p-type Si wafers using a periodic etch waveform. Two pSi formulations, representing chemistries relevant for self-reporting drug delivery applications, were tested: freshly etched pSi (fpSi) and fpSi coated with the biodegradable polymer chitosan (pSi-ch). Accelerated degradation of the samples in an ethanol-containing pH 10 aqueous basic buffer was monitored in situ by digital imaging with a consumer-grade digital camera with simultaneous optical reflectance spectrophotometric point measurements. As the nanostructured porous silicon matrix dissolved, a hypsochromic shift in the wavelength of the rugate reflectance peak resulted in visible color changes from red to green. While the H coordinate in the hue, saturation, and value (HSV) color space calculated using the as-acquired photographs was a good monitor of degradation at short times (t  pSi-ch. PMID:25242902

Design of a charge sensitive preamplifier on high resistivity silicon

International Nuclear Information System (INIS)

Radeka, V.; Rehak, P.; Rescia, S.; Gatti, E.; Longoni, A.; Sampietro, M.; Holl, P.; Strueder, L.; Kemmer, J.

1987-01-01

A low noise, fast charge sensitive preamplifier was designed on high resistivity, detector grade silicon. It is built at the surface of a fully depleted region of n-type silicon. This allows the preamplifier to be placed very close to a detector anode. The preamplifier uses the classical input cascode configuration with a capacitor and a high value resistor in the feedback loop. The output stage of the preamplifier can drive a load up to 20pF. The power dissipation of the preamplifier is 13mW. The amplifying elements are ''Single Sided Gate JFETs'' developed especially for this application. Preamplifiers connected to a low capacitance anode of a drift type detector should achieve a rise time of 20ns and have an equivalent noise charge (ENC), after a suitable shaping, of less than 50 electrons. This performance translates to a position resolution better than 3μm for silicon drift detectors. 6 refs., 9 figs

Characterization of Nanocrystalline SiGe Thin Film Solar Cell with Double Graded-Dead Absorption Layer

Directory of Open Access Journals (Sweden)

Chao-Chun Wang

2012-01-01

Full Text Available The nanocrystalline silicon-germanium (nc-SiGe thin films were deposited by high-frequency (27.12 MHz plasma-enhanced chemical vapor deposition (HF-PECVD. The films were used in a silicon-based thin film solar cell with graded-dead absorption layer. The characterization of the nc-SiGe films are analyzed by scanning electron microscopy, UV-visible spectroscopy, and Fourier transform infrared absorption spectroscopy. The band gap of SiGe alloy can be adjusted between 0.8 and 1.7 eV by varying the gas ratio. For thin film solar cell application, using double graded-dead i-SiGe layers mainly leads to an increase in short-circuit current and therefore cell conversion efficiency. An initial conversion efficiency of 5.06% and the stabilized efficiency of 4.63% for an nc-SiGe solar cell were achieved.

Kinetic Modeling of a Silicon Refining Process in a Moist Hydrogen Atmosphere

Science.gov (United States)

Chen, Zhiyuan; Morita, Kazuki

2018-06-01

We developed a kinetic model that considers both silicon loss and boron removal in a metallurgical grade silicon refining process. This model was based on the hypotheses of reversible reactions. The reaction rate coefficient kept the same form but error of terminal boron concentration could be introduced when relating irreversible reactions. Experimental data from published studies were used to develop a model that fit the existing data. At 1500 °C, our kinetic analysis suggested that refining silicon in a moist hydrogen atmosphere generates several primary volatile species, including SiO, SiH, HBO, and HBO2. Using the experimental data and the kinetic analysis of volatile species, we developed a model that predicts a linear relationship between the reaction rate coefficient k and both the quadratic function of p(H2O) and the square root of p(H2). Moreover, the model predicted the partial pressure values for the predominant volatile species and the prediction was confirmed by the thermodynamic calculations, indicating the reliability of the model. We believe this model provides a foundation for designing a silicon refining process with a fast boron removal rate and low silicon loss.

Material and Energy Flows Associated with Select Metals in GREET 2. Molybdenum, Platinum, Zinc, Nickel, Silicon

Energy Technology Data Exchange (ETDEWEB)

Benavides, Pahola T. [Argonne National Lab. (ANL), Argonne, IL (United States); Dai, Qiang [Argonne National Lab. (ANL), Argonne, IL (United States); Sullivan, John L. [Argonne National Lab. (ANL), Argonne, IL (United States); Kelly, Jarod C. [Argonne National Lab. (ANL), Argonne, IL (United States); Dunn, Jennifer B. [Argonne National Lab. (ANL), Argonne, IL (United States)

2015-09-01

In this work, we analyzed the material and energy consumption from mining to production of molybdenum, platinum, zinc, and nickel. We also analyzed the production of solar- and semiconductor-grade silicon. We described new additions to and expansions of the data in GREET 2. In some cases, we used operating permits and sustainability reports to estimate the material and energy flows for molybdenum, platinum, and nickel, while for zinc and silicon we relied on information provided in the literature.

Report on achievements in fiscal 1998. Development of silicon manufacturing process to rationalize energy usage (Development of mass production technology for solar-grade silicon); 1998 nendo energy shiyo gorika silicon seizo process kaihatsu seika hokokusho. Taiyo denchiyo silicon ryosanka seizo gijutsu no kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1999-03-01

In the proliferation stage of solar cells, a technology is required to manufacture low-cost SOG-Si that can handle small quantity production. Development is being made on a manufacturing technology using high purity metallic silicon (99.5%) as the raw material. Considering that the subject impurities are P, B and metallic impurities (Fe, Ti and Al), a manufacturing method consisting of the following processes is being developed: metallic silicon/phosphorus removal, solidification and rough refining/boron removal, solidification and fine refining. Discussions are being advanced on phosphorus removal by using a large electron beam fusion equipment, and at the same time, the discussions are supported by fabricating and installing a large equipment intended of removing boron and the metallic impurities. Boron is removed by oxidizing it with steam. Therefore, the basic mechanism of the equipment is to spray argon plasma added with steam onto the molten silicon surface. In boron removal, diffusion of boron onto the reaction interface in the primary reaction determines the rate. A boron removal rate for B/10 to 0.1 ppm of 45 kg/h as maximum was achieved. The derived silicon has met the requirement. (NEDO)

Design and development of fluidized bed reactor system for production of trichlorosilane as a precursor for high purity silicon

International Nuclear Information System (INIS)

Kumar, Rajesh; Mohan, Sadhana; Bhanja, K.; Nayak, S.; Bhattacharya, S.K.

2009-01-01

Trichlorosilane is widely used as precursor material for production of high purity silicon. It is mainly produced by reaction of metallurgical grade silicon with anhydrous HCl gas in a fluidized bed reactor. To develop this process on commercial scale a pilot size fluidized bed reactor system was designed and developed and successfully operated. This paper discusses the critical issues related to these activities. (author)

Effects of deep impurities and structural defects in polycrystalline silicon for photovoltaic applications

International Nuclear Information System (INIS)

Galluzzi, F.; Scafe, E.; Beghi, M.; Fossati, S.; Tincani, M.; Pizzini, S.

1985-01-01

An extensive experimental study of minority carrier recombination in CZ grown polycrystalline silicon intentionally doped with metallic impurities (Ti, V, Fe, Cr, Zr) is reported. Experimental values of average diffusion lengths have been compared with values calculated by a simple model of carrier recombination, taking into account the effects of impurities, grain boundaries and intragrain crystal defects. The results are fairly consistent and allow the determination of threshold densities for structural defects and deep impurities. The author's analysis gives a simple quantitative description of recombination processes in solar-grade silicon, as far as the average behaviour is concerned

Preparing rare earth-silicon-iron-aluminum alloys

International Nuclear Information System (INIS)

Marchant, J.D.; Morrice, E.; Herve, B.P.; Wong, M.M.

1980-01-01

As part of its mission to assure the maximum recovery and use of the Nation's mineral resources, the Bureau of Mines, investigated an improved procedure for producing rare earth-silicon alloys. For example, a charge consisting of 681 grams of mixed rare-earth oxides, 309 grams of ferrosilicon (75 wt-pct Si), and 182 grams of aluminum metal along with a flux consisting of 681 grams of CaO and 45 grams of MgO was reacted at 1500 0 C in an induction furnace. Good slag-metal separation was achieved. The alloy product contained, in weight-percent, 53 RE, 28 Si, 11 Fe, and 4 Al with a rare earth recovery of 80 pct. In current industrial practice rare earth recoveries are usually about 60 pct in alloy products that contain approximately 30 wt-pct each of rare earths and silicon. Metallurgical evaluations showed the alloys prepared in this investigation to be as effective in controlling the detrimental effect of sulfur in steel and cast iron as the commercial rare earth-silicon-iron alloys presently used in the steel industry

SIMULATED 8 MeV NEUTRON RESPONSE FUNCTIONS OF A THIN SILICON NEUTRON SENSOR.

Science.gov (United States)

Takada, Masashi; Matsumoto, Tetsuro; Masuda, Akihiko; Nunomiya, Tomoya; Aoyama, Kei; Nakamura, Takashi

2017-12-22

Neutron response functions of a thin silicon neutron sensor are simulated using PHITS2 and MCNP6 codes for an 8 MeV neutron beam at angles of incidence of 0°, 30° and 60°. The contributions of alpha particles created from the 28Si(n,α)25Mg reaction and the silicon nuclei scattered elastically by neutrons in the silicon sensor have not been well reproduced using the MCNP6 code. The 8 MeV neutron response functions simulated using the PHITS2 code with an accurate event generator mode are in good agreement with experimental results and include the contributions of the alpha particles and silicon nuclei. © The Author(s) 2017. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Method for Forming Fiber Reinforced Composite Bodies with Graded Composition and Stress Zones

Science.gov (United States)

Singh, Mrityunjay (Inventor); Levine, Stanley R. (Inventor); Smialek, James A. (Inventor)

1999-01-01

A near-net, complex shaped ceramic fiber reinforced silicon carbide based composite bodies with graded compositions and stress zones is disclosed. To provide the composite a fiber preform is first fabricated and an interphase is applied by chemical vapor infiltration, sol-gel or polymer processes. This first body is further infiltrated with a polymer mixture containing carbon, and/or silicon carbide, and additional oxide, carbide, or nitride phases forming a second body. One side of the second body is spray coated or infiltrated with slurries containing high thermal expansion and oxidation resistant. crack sealant phases and the other side of this second body is coated with low expansion phase materials to form a third body. This third body consisting of porous carbonaceous matrix surrounding the previously applied interphase materials, is then infiltrated with molten silicon or molten silicon-refractory metal alloys to form a fourth body. The resulting fourth body comprises dense composites consisting of fibers with the desired interphase which are surrounded by silicon carbide and other second phases materials at the outer and inner surfaces comprising material of silicon, germanium, refractory metal suicides, borides, carbides, oxides, and combinations thereof The resulting composite fourth body has different compositional patterns from one side to the other.

Evaluation of hydrogen and oxygen impurity levels on silicon surfaces

Energy Technology Data Exchange (ETDEWEB)

Kenny, M.J.; Wielunski, L.S.; Netterfield, R.P.; Martin, P.J.; Leistner, A. [Commonwealth Scientific and Industrial Research Organisation (CSIRO), Lindfield, NSW (Australia). Div. of Applied Physics

1996-12-31

This paper reports on surface analytical techniques used to quantify surface concentrations of impurities such as oxygen and hydrogen. The following analytical techniques were used: Rutherford and Backscattering, elastic recoil detection, time-of-flight SIMS, spectroscopic ellipsometry, x-ray photoelectron spectroscopy. The results have shown a spread in thickness of oxide layer, ranging from unmeasurable to 1.6 nm. The data must be considered as preliminary at this stage, but give some insight into the suitability of the techniques and a general idea of the significance of impurities at the monolayer level. These measurements have been carried out on a small number of silicon surfaces both semiconductor grade <111> crystalline material and silicon which has been used in sphere fabrication. 5 refs., 1 fig.

Evaluation of hydrogen and oxygen impurity levels on silicon surfaces

Energy Technology Data Exchange (ETDEWEB)

Kenny, M J; Wielunski, L S; Netterfield, R P; Martin, P J; Leistner, A [Commonwealth Scientific and Industrial Research Organisation (CSIRO), Lindfield, NSW (Australia). Div. of Applied Physics

1997-12-31

This paper reports on surface analytical techniques used to quantify surface concentrations of impurities such as oxygen and hydrogen. The following analytical techniques were used: Rutherford and Backscattering, elastic recoil detection, time-of-flight SIMS, spectroscopic ellipsometry, x-ray photoelectron spectroscopy. The results have shown a spread in thickness of oxide layer, ranging from unmeasurable to 1.6 nm. The data must be considered as preliminary at this stage, but give some insight into the suitability of the techniques and a general idea of the significance of impurities at the monolayer level. These measurements have been carried out on a small number of silicon surfaces both semiconductor grade <111> crystalline material and silicon which has been used in sphere fabrication. 5 refs., 1 fig.

Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Annual Subcontract Report, 1 October 2003--30 September 2004

Energy Technology Data Exchange (ETDEWEB)

Wohlgemuth, J.; Narayanan, M.

2005-03-01

The major objectives of this program are to continue the advancement of BP Solar polycrystalline silicon manufacturing technology. The program includes work in the following areas: Efforts in the casting area to increase ingot size, improve ingot material quality, and improve handling of silicon feedstock as it is loaded into the casting stations; developing wire saws to slice 100- m-thick silicon wafers on 290- m centers; developing equipment for demounting and subsequent handling of very thin silicon wafers; developing cell processes using 100- m-thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%; expanding existing in-line manufacturing data reporting systems to provide active process control; establishing a 50-MW (annual nominal capacity) green-field Mega-plant factory model template based on this new thin polycrystalline silicon technology; facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock.

Polyethylene Nanocomposites for the Next Generation of Ultralow-Transmission-Loss HVDC Cables: Insulation Containing Moisture-Resistant MgO Nanoparticles.

Science.gov (United States)

Pourrahimi, Amir Masoud; Pallon, Love K H; Liu, Dongming; Hoang, Tuan Anh; Gubanski, Stanislaw; Hedenqvist, Mikael S; Olsson, Richard T; Gedde, Ulf W

2016-06-15

The use of MgO nanoparticles in polyethylene for cable insulation has attracted considerable interest, although in humid media the surface regions of the nanoparticles undergo a conversion to a hydroxide phase. A facile method to obtain MgO nanoparticles with a large surface area and remarkable inertness to humidity is presented. The method involves (a) low temperature (400 °C) thermal decomposition of Mg(OH)2, (b) a silicone oxide coating to conceal the nanoparticles and prevent interparticle sintering upon exposure to high temperatures, and (c) heat treatment at 1000 °C. The formation of the hydroxide phase on these silicone oxide-coated MgO nanoparticles after extended exposure to humid air was assessed by thermogravimetry, infrared spectroscopy, and X-ray diffraction. The nanoparticles showed essentially no sign of any hydroxide phase compared to particles prepared by the conventional single-step thermal decomposition of Mg(OH)2. The moisture-resistant MgO nanoparticles showed improved dispersion and interfacial adhesion in the LDPE matrix with smaller nanosized particle clusters compared with conventionally prepared MgO. The addition of 1 wt % moisture-resistant MgO nanoparticles was sufficient to decrease the conductivity of polyethylene 30 times. The reduction in conductivity is discussed in terms of defect concentration on the surface of the moisture-resistant MgO nanoparticles at the polymer/nanoparticle interface.

Effective Chemical Route to 2D Nanostructured Silicon Electrode Material: Phase Transition from Exfoliated Clay Nanosheet to Porous Si Nanoplate

International Nuclear Information System (INIS)

Adpakpang, Kanyaporn; Patil, Sharad B.; Oh, Seung Mi; Kang, Joo-Hee; Lacroix, Marc; Hwang, Seong-Ju

2016-01-01

Graphical abstract: Effective morphological control of porous silicon 2D nanoplate can be achieved by the magnesiothermically-induced phase transition of exfoliated silicate clay nanosheets. The promising lithium storage performance of the obtained silicon materials with huge capacity and excellent rate characteristics underscores the prime importance of porously 2D nanostructured morphology of silicon. - Highlights: • 2D nanostructured silicon electrode materials are successfully synthesized via the magnesiothermically-induced phase transition of exfoliated clay 2D nanosheets. • High discharge capacity and rate capability are achieved from the 2D nanoplates of silicon. • Silicon 2D nanoplates can enhance both Li"+ diffusion and charge-transfer kinetics. • 2D nanostructured silicon is beneficial for the cycling stability by minimizing the volume change during lithiation-delithiation. - Abstract: An efficient and economical route for the synthesis of porous two-dimensional (2D) nanoplates of silicon is developed via the magnesiothermically-induced phase transition of exfoliated clay 2D nanosheets. The magnesiothermic reaction of precursor clay nanosheets prepared by the exfoliation and restacking with Mg"2"+ cations yields porous 2D nanoplates of elemental silicon. The variation in the Mg:SiO_2 ratio has a significant effect on the porosity and connectivity of silicon nanoplates. The porous silicon nanoplates show a high discharge capacity of 2000 mAh g"−"1 after 50 cycles. Of prime importance is that this electrode material still retains a large discharge capacity at higher C-rates, which is unusual for the elemental silicon electrode. This is mainly attributed to the improved diffusion of lithium ions, charge-transfer kinetics, and the preservation of the electrical connection of the porous 2D plate-shaped morphology. This study highlights the usefulness of clay mineral as an economical and scalable precursor of high-performance silicon electrodes with

Analysis of heating effect on the process of high deposition rate microcrystalline silicon

International Nuclear Information System (INIS)

Xiao-Dan, Zhang; He, Zhang; Chang-Chun, Wei; Jian, Sun; Guo-Fu, Hou; Shao-Zhen, Xiong; Xin-Hua, Geng; Ying, Zhao

2010-01-01

A possible heating effect on the process of high deposition rate microcrystalline silicon has been studied. It includes the discharge time-accumulating heating effect, discharge power, inter-electrode distance, and total gas flow rate induced heating effect. It is found that the heating effects mentioned above are in some ways quite similar to and in other ways very different from each other. However, all of them will directly or indirectly cause the increase of the substrate surface temperature during the process of depositing microcrystalline silicon thin films, which will affect the properties of the materials with increasing time. This phenomenon is very serious for the high deposition rate of microcrystalline silicon thin films because of the high input power and the relatively small inter-electrode distance needed. Through analysis of the heating effects occurring in the process of depositing microcrystalline silicon, it is proposed that the discharge power and the heating temperature should be as low as possible, and the total gas flow rate and the inter-electrode distance should be suitable so that device-grade high quality deposition rate microcrystalline silicon thin films can be fabricated

The Effectiveness of Al-Si Coatings for Preventing Interfacial Reaction in Al - Mg Dissimilar Metal Welding

OpenAIRE

Wang, Yin; Al-Zubaidy, Basem; Prangnell, Philip

2017-01-01

The dissimilar welding of aluminum to magnesium is challenging because of the rapid formation of brittle intermetallic compounds (IMC) at the weld interface. An Al-Si coating interlayer was selected to address this problem, based on thermodynamic calculations that predicted silicon would change the reaction path to avoid formation of the normally observed binary Al-Mg IMC phases (-Al3Mg2 and -Al12Mg17). Long-term static heat treatments confirmed that a Si-rich coating will preferentially pr...

Silicone metalization

Energy Technology Data Exchange (ETDEWEB)

Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

2008-12-09

A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

Science.gov (United States)

Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

2018-03-01

Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

Microcrystalline bottom cells in large area thin film silicon MICROMORPH™ solar modules

Czech Academy of Sciences Publication Activity Database

Hoetzel, J.E.; Caglar, O.; Cashmore, J.S.; Goury, C.; Kalaš, J.; Klindworth, M.; Kupich, M.; Leu, G.F.; Lindic, M.H.; Losio, P.A.; Mates, Tomáš; Mereu, B.; Roschek, T.; Sinicco, I.

2016-01-01

Roč. 157, Dec (2016), s. 178-189 ISSN 0927-0248 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : microcrystalline silicon * material quality * PECVD * Raman crystallinity * grading * micromorph Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 4.784, year: 2016

Composites comprising silicon carbide fibers dispersed in magnesia-aluminate matrix and fabrication thereof and of other composites by sinter forging

Science.gov (United States)

Panda, Prakash C.; Seydel, Edgar R.; Raj, Rishi

1989-10-03

A novel ceramic-ceramic composite of a uniform dispersion of silicon carbide fibers in a matrix of MgO.multidot.nAl.sub.2 O.sub.3 wherein n ranges from about 1 to about 4.5, said composite comprising by volume from 1 to 50% silicon carbide fibers and from 99 to 50% MgO.multidot.nAl.sub.2 O.sub.3. The composite is readily fabricated by forming a powder comprising a uniform dispersion of silicon carbide fibers in poorly crystalline phase comprising MgO and Al.sub.2 O.sub.3 in a mole ratio of n and either (a) hot pressing or preferably (b) cold pressing to form a preform and then forging utilizing a temperature in the range of 1100.degree. C. to 1900.degree. C. and a strain rate ranging from about 10.sup.-5 seconds .sup.-1 to about 1 seconds .sup.-1 so that surfaces cracks do not appear to obtain a shear deformation greater than 30%.

CdCl2 passivation of polycrystalline CdMgTe and CdZnTe absorbers for tandem photovoltaic cells

Science.gov (United States)

Swanson, Drew E.; Reich, Carey; Abbas, Ali; Shimpi, Tushar; Liu, Hanxiao; Ponce, Fernando A.; Walls, John M.; Zhang, Yong-Hang; Metzger, Wyatt K.; Sampath, W. S.; Holman, Zachary C.

2018-05-01

As single-junction silicon solar cells approach their theoretical limits, tandems provide the primary path to higher efficiencies. CdTe alloys can be tuned with magnesium (CdMgTe) or zinc (CdZnTe) for ideal tandem pairing with silicon. A II-VI/Si tandem holds the greatest promise for inexpensive, high-efficiency top cells that can be quickly deployed in the market using existing polycrystalline CdTe manufacturing lines combined with mature silicon production lines. Currently, all high efficiency polycrystalline CdTe cells require a chloride-based passivation process to passivate grain boundaries and bulk defects. This research examines the rich chemistry and physics that has historically limited performance when extending Cl treatments to polycrystalline 1.7-eV CdMgTe and CdZnTe absorbers. A combination of transmittance, quantum efficiency, photoluminescence, transmission electron microscopy, and energy-dispersive X-ray spectroscopy clearly reveals that during passivation, Mg segregates and out-diffuses, initially at the grain boundaries but eventually throughout the bulk. CdZnTe exhibits similar Zn segregation behavior; however, the onset and progression is localized to the back of the device. After passivation, CdMgTe and CdZnTe can render a layer that is reduced to predominantly CdTe electro-optical behavior. Contact instabilities caused by inter-diffusion between the layers create additional complications. The results outline critical issues and paths for these materials to be successfully implemented in Si-based tandems and other applications.

Low-energy nuclear physics with high-segmentation silicon arrays

International Nuclear Information System (INIS)

Betts, R.R.; Univ. of Illinois, Chicago, IL

1994-01-01

A brief history is given of silicon detectors leading up to the development of ion-implanted strip detectors. Two examples of their use in low energy nuclear physics are discussed; the search for exotic alpha-chain states in 24 Mg and studies of anomalous positron-electron pairs produced in collisions of very heavy ions

Hot corrosion studies on nickel-based alloys containing silicon

International Nuclear Information System (INIS)

Kerr, T.W.; Simkovich, G.

1976-01-01

Alloys of Ni--Cr, Ni--Si and Ni--Cr--Si were oxidized and ''hot corroded'' in pure oxygen at 1000 0 C. In the oxidation experiments it was found that small amounts of either chromium or silicon in nickel increased the oxidation rates in comparison to pure nickel in accord with Wagner's parabolic oxidation theory. At high concentrations of the alloying elements the oxidation rates decreased due to the formation of oxide phases other than nickel oxide in the scale. Hot corrosion experiments were conducted on both binary and ternary alloys by oxidizing samples coated with 1.0 mg/cm 2 of Na 2 SO 4 in oxygen at 1000 0 C. In general it was found that high chromium and high silicon alloys displayed excellent resistance to the hot corrosion process gaining or losing less than 0.5 mg/cm 2 in 1800 min at temperature. Microprobe and x-ray diffraction studies of the alloy and the scale indicate that amorphous SiO 2 probably formed to aid in retarding both the oxidation and the hot corrosion process

Suitability of the double Langevin function for description of anhysteretic magnetization curves in NO and GO electrical steel grades

Directory of Open Access Journals (Sweden)

Simon Steentjes

2017-05-01

Full Text Available This paper compares the match obtained using the classical Langevin function, the tanh function as well as a recently by the authors proposed double Langevin function with the measured anhysteretic magnetization curve of three different non-oriented electrical steel grades and one grain-oriented grade. Two standard non-oriented grades and a high-silicon grade (Si content of 6.5% made by CVD are analyzed. An excellent match is obtained using the double Langevin function, whereas the classical solutions are less appropriate. Thereby, problems such as those due to propagation of approximation errors observed in hysteresis modeling can be bypassed.

Oxygen defect processes in silicon and silicon germanium

KAUST Repository

Chroneos, A.

2015-06-18

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

Oxygen defect processes in silicon and silicon germanium

KAUST Repository

Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlö gl, Udo

2015-01-01

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

The pH dependence of silicon-iron interaction in rats.

Science.gov (United States)

Jia, X; Emerick, R J; Kayongo-Male, H

1997-01-01

A 2 x 2 x 3 factorial experiment was conducted to study the pH dependence of a silicon-iron interaction in vivo. The dietary treatments used in the factorial design were the following (mg/kg of diet): silicon, 0 and 500; iron, 35 and 187; acid-base, ammonium chloride as 0.5% of total diet (acidic), sodium bicarbonate as 1.0% of total diet (basic), or no supplementation of acid or base (control). The supplementation of 500 mg silicon/kg of diet increased plasma-iron concentration in rats fed the acidic or control diets, but not in rats fed the basic diet. A high dietary-iron level suppressed copper absorption and utilization and subsequently imposed a negative effect on its own utilization. An increase in the plasma total-cholesterol concentration caused by high dietary-iron level was likely a consequence of the antagonistic effect of iron on copper absorption and utilization. The use of cupric sulfate pentahydrate as the dietary-copper source in this study resulted in plasma copper concentrations that were approximately twice those obtained in a related study using cupric carbonate. Also, a 42% coefficient of variation (C.V.) for plasma-copper concentrations of rats fed cupric sulfate in this study was greatly reduced from the C.V. = 108% previously associated with the dietary cupric carbonate.

Efficacy of On-Demand Therapy Using 20-mg Vonoprazan for Mild Reflux Esophagitis.

Science.gov (United States)

Umezawa, Mariko; Kawami, Noriyuki; Hoshino, Shintaro; Hoshikawa, Yoshimasa; Koizumi, Eriko; Takenouchi, Nana; Hanada, Yuriko; Kaise, Mitsuru; Iwakiri, Katsuhiko

2018-01-01

The study aimed to evaluate the efficacy of on-demand therapy using 20-mg vonoprazan for mild reflux esophagitis (RE). On-demand therapy by taking one 20-mg tablet of vonoprazan only when reflux symptoms occurred was performed for 24 weeks using 30 patients with mild RE who were receiving maintenance therapy with proton pomp inhibitors (PPIs). The presence or absence of RE, degree of overall satisfaction with the treatment, score of symptoms, and fasting gastrin level before breakfast were examined before and after on-demand therapy. The number of tablets taken during the 24-week period was also noted. One of the 30 patients dropped out of on-demand therapy 1 week after its initiation. Remission was maintained in 25 (86.2%) of the 29 patients (all 10 [100%] Los Angeles classification grade A patients and 15 (78.9%) of the 19 grade B patients). However, 4 grade B patients exhibited grade B relapse. There were no differences in the degree of overall satisfaction, score of symptoms or the gastrin level between PPI and on-demand therapies. The number of vonoprazan tablets taken during the observation period was 33 tablets (median)/24 weeks. On-demand therapy using 20-mg vonoprazan tablets is an effective alternative maintenance therapy for mild RE. © 2018 S. Karger AG, Basel.

Development and evaluation of die materials for use in the growth of silicon ribbons by the inverted ribbon growth process, task 2. LSSA project

Science.gov (United States)

Duffy, M. T.; Berkman, S.; Moss, H. S.; Cullen, G. W.

1978-01-01

The results of emission spectroscopic analysis indicate that molten silicon can remain in contact with hot-pressed Si3N4 (99.2 percent theoretical density) for prolonged periods without attaining the impurity content level of the nitride. Although MgO was used as binder, Mg was not found present in the silicon sessile drop in quantities much above the level initially present in the silicon source material. Preliminary experiments with EFG-type dies coated with CVD Si3N4 or CVD SiOxNy indicate that capillary rise does not occur readily in these dies. The same was found to be true of hot-pressed and reaction-sintered Si3N4 obtained commercially. However, when dies were formed by depositing CVD layers on shaped silicon slabs, a column of molten silicon was maintained in each CVD die while being heated in contact with a crucible of molten silicon. Preliminary wetting of dies appears necessary for EFG growth. Several ribbon growth experiments were performed from V-shaped dies.

Advances in Contactless Silicon Defect and Impurity Diagnostics Based on Lifetime Spectroscopy and Infrared Imaging

Directory of Open Access Journals (Sweden)

Jan Schmidt

2007-01-01

Full Text Available This paper gives a review of some recent developments in the field of contactless silicon wafer characterization techniques based on lifetime spectroscopy and infrared imaging. In the first part of the contribution, we outline the status of different lifetime spectroscopy approaches suitable for the identification of impurities in silicon and discuss—in more detail—the technique of temperature- and injection-dependent lifetime spectroscopy. The second part of the paper focuses on the application of infrared cameras to analyze spatial inhomogeneities in silicon wafers. By measuring the infrared signal absorbed or emitted from light-generated free excess carriers, high-resolution recombination lifetime mappings can be generated within seconds to minutes. In addition, mappings of non-recombination-active trapping centers can be deduced from injection-dependent infrared lifetime images. The trap density has been demonstrated to be an important additional parameter in the characterization and assessment of solar-grade multicrystalline silicon wafers, as areas of increased trap density tend to deteriorate during solar cell processing.

Thermodynamic analysis of the conditions of deoxidation and secondary treatment of low-silicon steel grade

Directory of Open Access Journals (Sweden)

Євген Анатолійович Чичкарьов

2015-10-01

Full Text Available This article is concerned with analysis and production testing of technological solutions aimed at reducing the consumption of aluminium for steel deoxidation and reducing level of metal contamination by oxide non-metal inclusions, as well as preventing silicon reduction during out-of-furnace treatment. The conditions of low-silicon steel deoxidation and out-of-furnace treatment have been analysed. It has been found that the scope of oxygen activity variation in the converter before tapping increases while the mass fraction of carbon in the metal decreases. For the converter meltings with a mass fraction of carbon over the range 0,05-0,07 % [C] before tapping the real range of variation was 150-300 ppm. The effect of meltings carburizing on aluminium consumption and the degree of aluminium assimilation have been analysed. It has been shown that in fact the same specific consumption of ferromanganese and comparable changes within the metal oxidation change range before tapping (400-1100 ppm the addition of the carburizer decreases the consumption of aluminium by 0,15 kg/t (in amounts of pure aluminium. The variation interval of assimilation degree of aluminium, consumed for binding the dissolved oxygen in metal and for dissolution in metal has been found. It has been shown that in the melting of low-silicon steel with out- of-furnace treatment but without the use of furnace-ladle unit the rational limit of variation of mass fraction of magnesium oxide variation in the ladle slag is equal to- 6-8 % by weight

Silicon epitaxy on textured double layer porous silicon by LPCVD

International Nuclear Information System (INIS)

Cai Hong; Shen Honglie; Zhang Lei; Huang Haibin; Lu Linfeng; Tang Zhengxia; Shen Jiancang

2010-01-01

Epitaxial silicon thin film on textured double layer porous silicon (DLPS) was demonstrated. The textured DLPS was formed by electrochemical etching using two different current densities on the silicon wafer that are randomly textured with upright pyramids. Silicon thin films were then grown on the annealed DLPS, using low-pressure chemical vapor deposition (LPCVD). The reflectance of the DLPS and the grown silicon thin films were studied by a spectrophotometer. The crystallinity and topography of the grown silicon thin films were studied by Raman spectroscopy and SEM. The reflectance results show that the reflectance of the silicon wafer decreases from 24.7% to 11.7% after texturing, and after the deposition of silicon thin film the surface reflectance is about 13.8%. SEM images show that the epitaxial silicon film on textured DLPS exhibits random pyramids. The Raman spectrum peaks near 521 cm -1 have a width of 7.8 cm -1 , which reveals the high crystalline quality of the silicon epitaxy.

Optimization of Fluorescent Silicon Nano material Production Using Peroxide/ Acid/ Salt Technique

International Nuclear Information System (INIS)

Abuhassan, L.H.

2009-01-01

Silicon nano material was prepared using the peroxide/ acid/ salt technique in which an aqueous silicon-based salt solution was added to H 2 O 2 / HF etchants. In order to optimize the experimental conditions for silicon nano material production, the amount of nano material produced was studied as a function of the volume of the silicon salt solution used in the synthesis. A set of samples was prepared using: 0, 5, 10, 15, and 20 ml of an aqueous 1 mg/ L metasilicate solution. The area under the corresponding peaks in the infrared (ir) absorption spectra was used as a qualitative indicator to the amount of the nano material present. The results indicated that using 10 ml of the metasilicate solution produced the highest amount of nano material. Furthermore, the results demonstrated that the peroxide/ acid/ salt technique results in the enhancement of the production yield of silicon nano material at a reduced power demand and with a higher material to void ratio. A model in which the silicon salt forms a secondary source of silicon nano material is proposed. The auxiliary nano material is deposited into the porous network causing an increase in the amount of nano material produced and a reduction in the voids present. Thus a reduction in the resistance of the porous layer, and consequently reduction in the power required, are expected. (author)

Nanoparticle enhanced evaporation of liquids: A case study of silicone oil and water

OpenAIRE

Zhang, Wenbin; Shen, Rong; Lu, Kunquan; Ji, Ailing; Cao, Zexian

2012-01-01

Evaporation is a fundamental physical phenomenon, of which many challenging questions remain unanswered. Enhanced evaporation of liquids in some occasions is of enormous practical significance. Here we report the enhanced evaporation of the nearly permanently stable silicone oil by dispersing with nanopariticles including CaTiO3, anatase and rutile TiO2. An evaporation rate as high as 1.33 mg/h·cm2 was measured in silicone oil when dispersed with 100 nm-sized CaTiO3 particles. Dependence of e...

Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Final Subcontract Report, 1 April 2002--28 February 2006

Energy Technology Data Exchange (ETDEWEB)

Wohlgemuth, J.; Narayanan, M.

2006-07-01

The major objectives of this program were to continue advances of BP Solar polycrystalline silicon manufacturing technology. The Program included work in the following areas. (1) Efforts in the casting area to increase ingot size, improve ingot material quality, and improve handling of silicon feedstock as it is loaded into the casting stations. (2) Developing wire saws to slice 100-..mu..m-thick silicon wafers on 290-..mu..m-centers. (3) Developing equipment for demounting and subsequent handling of very thin silicon wafers. (4) Developing cell processes using 100-..mu..m-thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%. (5) Expanding existing in-line manufacturing data reporting systems to provide active process control. (6) Establishing a 50-MW (annual nominal capacity) green-field Mega-plant factory model template based on this new thin polycrystalline silicon technology. (7) Facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock..

Silicon Alleviates Nonalcoholic Steatohepatitis by Reducing Apoptosis in Aged Wistar Rats Fed a High-Saturated Fat, High-Cholesterol Diet.

Science.gov (United States)

Garcimartín, Alba; López-Oliva, M Elvira; Sántos-López, Jorge A; García-Fernández, Rosa A; Macho-González, Adrián; Bastida, Sara; Benedí, Juana; Sánchez-Muniz, Francisco J

2017-06-01

Background: Lipoapoptosis has been identified as a key event in the progression of nonalcoholic fatty liver disease (NAFLD), and hence, antiapoptotic agents have been recommended as a possible effective treatment for nonalcoholic steatohepatitis (NASH). Silicon, included in meat as a functional ingredient, improves lipoprotein profiles and liver antioxidant defenses in aged rats fed a high-saturated fat, high-cholesterol diet (HSHCD). However, to our knowledge, the antiapoptotic effect of this potential functional meat on the liver has never been tested. Objective: This study was designed to evaluate the effect of silicon on NASH development and the potential antiapoptotic properties of silicon in aged rats. Methods: One-year-old male Wistar rats weighing ∼500 g were fed 3 experimental diets containing restructured pork (RP) for 8 wk: 1 ) a high-saturated fat diet, as an NAFLD control, with 16.9% total fat, 0.14 g cholesterol/kg diet, and 46.8 mg SiO 2 /kg (control); 2 ) the HSHCD as a model of NASH, with 16.6% total fat, 16.3 g cholesterol/kg diet, and 46.8 mg SiO 2 /kg [high-cholesterol diet (Chol-C)]; and 3 ) the HSHCD with silicon-supplemented RP with amounts of fat and cholesterol identical to those in the Chol-C diet, but with 750 mg SiO 2 /kg (Chol-Si). Detailed histopathological assessments were performed, and the NAFLD activity score (NAS) was calculated. Liver apoptosis and damage markers were evaluated by Western blotting and immunohistochemical staining. Results: Chol-C rats had a higher mean NAS (7.4) than did control rats (1.9; P silicon substantially affects NASH development in aged male Wistar rats fed an HSHCD by partially blocking apoptosis. These results suggest that silicon-enriched RP could be used as an effective nutritional strategy in preventing NASH. © 2017 American Society for Nutrition.

Report on 1979 result of Sunshine Project. R and D on solar power generation system (R and D on particle non-accelerated growth type silicon thin film crystal); 1979 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Ryushi hikasoku seichogata silicon usumaku kessho no kenkyu kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1980-03-01

The R and D was intended to establish the manufacturing technology of a particle non-accelerated growth type silicon thin film crystal, for the purpose of developing a technology for enabling the production of a solar power generation system, whose price is practically 1/100 compared with that of building the system with the current technology, and the R and D was also intended to build the system using such silicon material. While a simple purification method was examined for a low purity metallurgical-grade silicon, a solar-grade silicon (SOG) was developed as the new material this year, with a solar cell experimentally manufactured having a structure directly joined to the substrate material and with evaluation carried out on the characteristic of such solar cell. The application of 'gettering' was tried which was for removing harmful impurities from the substrate obtained from such material, bringing an outlook of manufacturing a solar cell with a conversion efficiency of 10%. Concerning the SOG-Si, the efficiency of 13% or higher was attained through the improvement of the manufacturing process. This was the value comparable to the case of using a conventional high purity monocrystal wafer. Further, the application of an ion implantation method was studied for the purpose of getting a low cost. (NEDO)

Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Annual Subcontract Report, 1 April 2002--30 September 2003 (Revised)

Energy Technology Data Exchange (ETDEWEB)

Wohlgemuth, J.; Shea, S. P.

2004-04-01

The goal of BP Solar's Crystalline PVMaT program is to improve the present polycrystalline silicon manufacturing facility to reduce cost, improve efficiency, and increase production capacity. Key components of the program are: increasing ingot size; improving ingot material quality; improving material handling; developing wire saws to slice 100 ..mu..m thick silicon wafers on 200 ..mu..m centers; developing equipment for demounting and subsequent handling of very thin silicon wafers; developing cell processes using 100 ..mu..m thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%; expanding existing in-line manufacturing data reporting systems to provide active process control; establishing a 50 MW (annual nominal capacity) green-field Mega plant factory model template based on this new thin polycrystalline silicon technology; and facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock.

Thin films of thermoelectric compound Mg2Sn deposited by co-sputtering assisted by multi-dipolar microwave plasma

International Nuclear Information System (INIS)

Le-Quoc, H.; Lacoste, A.; Hlil, E.K.; Bes, A.; Vinh, T. Tan; Fruchart, D.; Skryabina, N.

2011-01-01

Highlights: → Mg 2 Sn thin films deposited by plasma co-sputtering, on silicon and glass substrates. → Formation of nano-grained polycrystalline films on substrates at room temperature. → Structural properties vary with target biasing and target-substrate distance. → Formation of the hexagonal phase of Mg 2 Sn in certain deposition conditions. → Power factor ∼5.0 x 10 -3 W K -2 m -1 for stoichiometric Mg 2 Sn films doped with ∼1 at.% Ag. - Abstract: Magnesium stannide (Mg 2 Sn) thin films doped with Ag intended for thermoelectric applications are deposited on both silicon and glass substrates at room temperature by plasma assisted co-sputtering. Characterization by scanning electron microscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction confirms the formation of fine-grained polycrystalline thin films with thickness of 1-3 μm. Stoichiometry, microstructure and crystal structure of thin films are found to vary with target biasing and the distance from targets to substrate. Measurements of electrical resistivity and Seebeck coefficient at room temperature show the maximum power factor of ∼5.0 x 10 -3 W K -2 m -1 for stoichiometric Mg 2 Sn thin films doped with ∼1 at.% Ag.

Property control of graphene aerogels by in situ growth of silicone polymer

Science.gov (United States)

Zhou, Shuai; Zhou, Xiang; Hao, Gazi; Jiang, Wei; Wang, Tianhe

2018-05-01

Modulation of the density (from 3.5 to 64 mg cm-3), hydrophobicity and oil-uptake capability of graphene aerogels in extensive ranges were achieved by reacting (3-Mercaptopropyl)trimethoxysilane (MPS) with graphene oxide solutions under heating. The reaction allowed a characteristic silicone substructure to be formed on graphene and joint the graphene layers firmly together. With the increase of MPS concentrations (≤ca. 0.2 vol%), the nano silicone polymer grown on graphene functioned as a "linker" and "spacer", leading to a substantial decrease of the aerogel density. Because of the formation of silicone polymer and the characteristic nano-micro substructures on the backbones of graphene aerogels, the graphene aerogels exhibited a high hydrophobicity with the water contact angle consistently exceeding 142 degrees. Functionalized graphene aerogels with a density of 3.5 mg cm-3 were conveniently fabricated that displayed an extraordinary oil absorption capacity, 182 times for lubricating oil and 143 times for n-hexane of its own weight. Furthermore, the aerogels maintained their ultra-high absorption capability even after 20 absorption-distillation cycles, due to structural integrity held by the strong interfacial adhesion between graphene sheets and polymer chains of aerogels. This study offers a promising graphene aerogels and also provides a strategy for fabricating extra low dense functional materials.

Manufacture of ribbon and solar cells of material of semiconductor grade

International Nuclear Information System (INIS)

1980-01-01

A method is described of producing ribbon-like substantially monocrystalline bodies of silicon or other materials of semiconductor grade suitable for use in solar cells or other semiconductor devices. A tube of the material is made and a photovoltaic junction formed in it. The tube is then divided lengthwise into a number of ribbon-like bodies. The photovoltaic junction can be formed either by diffusion or by ion-implantation. (U.K.)

Micromachined silicon seismic accelerometer development

Energy Technology Data Exchange (ETDEWEB)

Barron, C.C.; Fleming, J.G.; Montague, S. [and others

1996-08-01

Batch-fabricated silicon seismic transducers could revolutionize the discipline of seismic monitoring by providing inexpensive, easily deployable sensor arrays. Our ultimate goal is to fabricate seismic sensors with sensitivity and noise performance comparable to short-period seismometers in common use. We expect several phases of development will be required to accomplish that level of performance. Traditional silicon micromachining techniques are not ideally suited to the simultaneous fabrication of a large proof mass and soft suspension, such as one needs to achieve the extreme sensitivities required for seismic measurements. We have therefore developed a novel {open_quotes}mold{close_quotes} micromachining technology that promises to make larger proof masses (in the 1-10 mg range) possible. We have successfully integrated this micromolding capability with our surface-micromachining process, which enables the formation of soft suspension springs. Our calculations indicate that devices made in this new integrated technology will resolve down to at least sub-{mu}G signals, and may even approach the 10{sup -10} G/{radical}Hz acceleration levels found in the low-earth-noise model.

Lattice location of impurities in silicon Carbide

CERN Document Server

AUTHOR|(CDS)2085259; Correia Martins, João Guilherme

The presence and behaviour of transition metals (TMs) in SiC has been a concern since the start of producing device-grade wafers of this wide band gap semiconductor. They are unintentionally introduced during silicon carbide (SiC) production, crystal growth and device manufacturing, which makes them difficult contaminants to avoid. Once in SiC they easily form deep levels, either when in the isolated form or when forming complexes with other defects. On the other hand, using intentional TM doping, it is possible to change the electrical, optical and magnetic properties of SiC. TMs such as chromium, manganese or iron have been considered as possible candidates for magnetic dopants in SiC, if located on silicon lattice sites. All these issues can be explored by investigating the lattice site of implanted TMs. This thesis addresses the lattice location and thermal stability of the implanted TM radioactive probes 56Mn, 59Fe, 65Ni and 111Ag in both cubic 3C- and hexagonal 6H SiC polytypes by means of emission cha...

Optimizing silicon application to improve salinity tolerance in wheat

Directory of Open Access Journals (Sweden)

A. Ali

2009-05-01

Full Text Available Salinity often suppresses the wheat performance. As wheat is designated as silicon (Si accumulator, hence Si application may alleviate the salinity induced damages. With the objective to combat the salinity stress in wheat by Si application (0, 50, 100, 150 and 200 mg L-1 using calcium silicate, an experiment was conducted on two contrasting wheat genotypes (salt sensitive; Auqab-2000 and salt tolerant; SARC-5 in salinized (10 dS m-1 and non-salinized (2 dS m-1 solutions. Plants were harvested 32 days after transplanting and evaluation was done on the basis of different morphological and analytical characters. Silicon supplementation into the solution culture improved wheat growth and K+/Na+ with reduced Na+ and enhanced K+ uptake. Concomitant improvement in shoot growth was observed; nonetheless the root growth remained unaffected by Si application. Better results were obtained with 150 and 200 mg L-1 of Si which were found almost equally effective. It was concluded that SARC-5 is better than Auqab-2000 against salt stress and Si inclusion into the solution medium is beneficial for wheat and can improve the crop growth both under optimal and salt stressful conditions.

Effects of silicon:carbon P+ layer interfaces on solar cells

International Nuclear Information System (INIS)

Jeffrey, F.R.; Vernstrom, G.D.; Weber, M.F.; Gilbert, J.R.

1987-01-01

Results are presented showing the effects on amorphous silicon (a-Si) photovoltaic performance of the interfaces associated with a silicon carbide (a-Si:C) p+ layer. Carbon grading into the intrinsic layer from the p+ layer increases open circuit voltage (Voc) from 0.7V to 0.88V. This effect is very similar to the boron profile effect reported earlier and supports the contention that Voc is being limited by an electron current at the p-i interface. The interface between the p+ a-Si:C layer and the transparent conductive oxide (TCO) is shown to be a potential source of high series resistance, with an abrupt interface showing the most serious problem. The effect is explained by electron injection from the TCO into the p+ layer being inhibited as a result of band mismatch

Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

Science.gov (United States)

Whitman, Pamela K.; Feke, Donald L.

1986-01-01

The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

Phase II study of imatinib mesylate and hydroxyurea for recurrent grade III malignant gliomas.

Science.gov (United States)

Desjardins, Annick; Quinn, Jennifer A; Vredenburgh, James J; Sathornsumetee, Sith; Friedman, Allan H; Herndon, James E; McLendon, Roger E; Provenzale, James M; Rich, Jeremy N; Sampson, John H; Gururangan, Sridharan; Dowell, Jeannette M; Salvado, August; Friedman, Henry S; Reardon, David A

2007-05-01

Recent reports demonstrate the activity of imatinib mesylate, an ATP-mimetic, tyrosine kinase inhibitor, plus hydroxyurea, a ribonucleotide reductase inhibitor, in patients with recurrent glioblastoma multiforme. We performed the current phase 2 study to evaluate this regimen among patients with recurrent WHO grade III malignant glioma (MG). Patients with grade III MG at any recurrence, received imatinib mesylate plus hydroxyurea (500 mg twice a day) orally on a continuous, daily schedule. The imatinib mesylate dose was 500 mg twice a day for patients on enzyme inducing anti-epileptic drugs (EIAEDs) and 400 mg once a day for those not on EIAEDs. Clinical assessments were performed monthly and radiographic assessments were obtained at least every 2 months. The primary endpoint was 6-month progression-free survival (PFS) rate. Thirty-nine patients were enrolled. All patients had progressive disease after prior radiotherapy and at least temozolomide-based chemotherapy. The median number of episodes of prior progression was 2 (range, 1-7) and the median number of prior treatment regimens was 3 (range, 1-8). With a median follow-up of 82.9 weeks, 24% of patients were progression-free at 6 months. The radiographic response rate was 10%, while 33% achieved stable disease. Among patients who achieved at least stable disease at first evaluation, the 6-month and 12-month PFS rates were 53% and 29%, respectively. The most common grade 3 or greater toxicities were hematologic and complicated less than 4% of administered courses. Imatinib mesylate plus hydroxyurea, is well tolerated and associated with anti-tumor activity in some patients with recurrent grade 3 MG.

Transformation of medical grade silicone rubber under Nd:YAG and excimer laser irradiation: First step towards a new miniaturized nerve electrode fabrication process

International Nuclear Information System (INIS)

Dupas-Bruzek, C.; Robbe, O.; Addad, A.; Turrell, S.; Derozier, D.

2009-01-01

Medical grade silicone rubber, poly-dimethylsiloxane (PDMS) is a widely used biomaterial. Like for many polymers, its surface can be modified in order to change one or several of its properties which further allow this surface to be functionalized. Laser-induced surface modification of PDMS under ambient conditions is an easy and powerful method for the surface modification of PDMS without altering its bulk properties. In particular, we profit from both UV laser inducing surface modification and of UV laser micromachining to develop a first part of a new process aiming at increasing the number of contacts and tracks within the same electrode surface to improve the nerve selectivity of implantable self sizing spiral cuff electrodes. The second and last part of the process is to further immerse the engraved electrode in an autocatalytic Pt bath leading in a selective Pt metallization of the laser irradiated tracks and contacts and thus to a functionalized PDMS surface. In the present work, we describe the different physical and chemical transformations of a medical grade PDMS as a function of the UV laser and of the irradiation conditions used. We show that the ablation depths, chemical composition, structure and morphology vary with (i) the laser wavelength (using an excimer laser at 248 nm and a frequency-quadrupled Nd:YAG laser at 266 nm), (ii) the conditions of irradiation and (iii) the pulse duration. These different modified properties are expected to have a strong influence on the nucleation and growth rates of platinum which govern the adhesion and the thickness of the Pt layer on the electrodes and thus the DC resistance of tracks.

Mg doping of GaN by molecular beam epitaxy

International Nuclear Information System (INIS)

Lieten, R R; Buchowicz, G; Dubon, O; Motsnyi, V; Zhang, L; Cheng, K; Leys, M; Degroote, S; Borghs, G

2011-01-01

We present a systematic study on the influence of growth conditions on the incorporation and activation of Mg in GaN layers grown by plasma-assisted molecular beam epitaxy. We show that high quality p-type GaN layers can be obtained on GaN-on-silicon templates. The Mg incorporation and the electrical properties have been investigated as a function of growth temperature, Ga : N flux ratio and Mg : Ga flux ratio. It was found that the incorporation of Mg and the electrical properties are highly sensitive to the Ga : N flux ratio. The highest hole mobility and lowest resistivity were achieved for slightly Ga-rich conditions. In addition to an optimal Ga : N ratio, an optimum Mg : Ga flux ratio was also observed at around 1%. We observed a clear Mg flux window for p-type doping of GaN : 0.31% 17 cm -3 and a mobility of 15 cm 2 V -1 s -1 . Temperature-dependent Hall effect measurements indicate an acceptor depth in these samples of 100 meV for a hole concentration of 5.5 x 10 17 cm -3 . The corresponding Mg concentration is 5 x 10 19 cm -3 , indicating approximately 1% activation at room temperature. In addition to continuous growth of Mg-doped GaN layers we also investigated different modulated growth procedures. We show that a modulated growth procedure has only limited influence on Mg doping at a growth temperature of 800 deg. or higher. This result is thus in contrast to previously reported GaN : Mg doping at much lower growth temperatures of 500 deg. C.

Arsenic implantation into polycrystalline silicon and diffusion to silicon substrate

International Nuclear Information System (INIS)

Tsukamoto, K.; Akasaka, Y.; Horie, K.

1977-01-01

Arsenic implantation into polycrystalline silicon and drive-in diffusion to silicon substrate have been investigated by MeV He + backscattering analysis and also by electrical measurements. The range distributions of arsenic implanted into polycrystalline silicon are well fitted to Gaussian distributions over the energy range 60--350 keV. The measured values of R/sub P/ and ΔR/sub P/ are about 10 and 20% larger than the theoretical predictions, respectively. The effective diffusion coefficient of arsenic implanted into polycrystalline silicon is expressed as D=0.63 exp[(-3.22 eV/kT)] and is independent of the arsenic concentration. The drive-in diffusion of arsenic from the implanted polycrystalline silicon layer into the silicon substrate is significantly affected by the diffusion atmosphere. In the N 2 atmosphere, a considerable amount of arsenic atoms diffuses outward to the ambient. The outdiffusion can be suppressed by encapsulation with Si 3 N 4 . In the oxidizing atmosphere, arsenic atoms are driven inward by growing SiO 2 due to the segregation between SiO 2 and polycrystalline silicon, and consequently the drive-in diffusion of arsenic is enhanced. At the interface between the polycrystalline silicon layer and the silicon substrate, arsenic atoms are likely to segregate at the polycrystalline silicon side

Porous silicon: silicon quantum dots for photonic applications

International Nuclear Information System (INIS)

Pavesi, L.; Guardini, R.

1996-01-01

Porous silicon formation and structure characterization are briefly illustrated. Its luminescence properties rae presented and interpreted on the basis of exciton recombination in quantum dot structures: the trap-controlled hopping mechanism is used to describe the recombination dynamics. Porous silicon application to photonic devices is considered: porous silicon multilayer in general, and micro cavities in particular are described. The present situation in the realization of porous silicon LEDs is considered, and future developments in this field of research are suggested. (author). 30 refs., 30 figs., 13 tabs

Effect of silicon and nanosilicon on reduction of damage caused by salt stress in maize (Zea mays seedlings

Directory of Open Access Journals (Sweden)

Assieh Behdad

2015-12-01

Full Text Available Salinity reduced the efficiency of agricultural production like maize as one of the most important cereals for food and oil for humans. Silicon is the second most abundant element in the soil and alleviates the biotic and abiotic stresses in plants. The aim of this study is evaluate the effect of silicon and nanosilicon on improvement of salt stress in maize (Zea mays. For this propose, the interaction between the effects of different levels of salinity (0 and 100 mM, silicon and nanosilicon (50, 100 and 150 mg /mL was studied in completely randomized block design with factorial experiments and with three replications. The results showed that salinity significantly decreased root and shoot growth, amount of chlorophyll and carotenoid pigments, protein and potassium contents, compared to control. Treating plants with silicon and nanosilicon caused reduction of salinity effects and increase above indices. Salinity stress also caused a significant increase in proline, anthocyanin and soluble carbohydrate contents, lipid peroxidation, and catalase activity and treatment with silicon and nanosilicon alleviates effects of salt stress and reduced the amount of above indices. 150 mg/mL of nanosilicon showed the maximum effect on diminishing negative effects of salt stress on all examined parameters. So, the use of this element is proposed as alleviator of salt stress on maize.

Effect of Projectile Materials on Foreign Object Damage of a Gas-Turbine Grade Silicon Nitride

Science.gov (United States)

Choi, Sung R.; Racz, Zsolt; Bhatt, Ramakrishna T.; Brewer, David N.; Gyekenyesi, John P.

2005-01-01

Foreign object damage (FOD) behavior of AS800 silicon nitride was determined using four different projectile materials at ambient temperature. The target test specimens rigidly supported were impacted at their centers by spherical projectiles with a diameter of 1.59 mm. Four different types of projectiles were used including hardened steel balls, annealed steel balls, silicon nitride balls, and brass balls. Post-impact strength of each target specimen impacted was determined as a function of impact velocity to better understand the severity of local impact damage. The critical impact velocity where target specimens fail upon impact was highest with brass balls, lowest with ceramic ball, and intermediate with annealed and hardened steel balls. Degree of strength degradation upon impact followed the same order as in the critical impact velocity with respect to projectile materials. For steel balls, hardened projectiles yielded more significant impact damage than annealed counterparts. The most important material parameter affecting FOD was identified as hardness of projectiles and was correlated in terms of critical impact velocity, impact deformation, and impact load.

Mg2BIV: Narrow Bandgap Thermoelectric Semiconductors

Science.gov (United States)

Kim, Il-Ho

2018-05-01

Thermoelectric materials can convert thermal energy directly into electric energy and vice versa. The electricity generation from waste heat via thermoelectric devices can be considered as a new energy source. For instance, automotive exhaust gas and all industrial processes generate an enormous amount of waste heat that can be converted to electricity by using thermoelectric devices. Magnesium compound Mg2BIV (BIV = Si, Ge or Sn) has a favorable combination of physical and chemical properties and can be a good base for the development of new efficient thermoelectrics. Because they possess similar properties to those of group BIV elemental semiconductors, they have been recognized as good candidates for thermoelectric applications. Mg2Si, Mg2Ge and Mg2Sn with an antifluorite structure are narrow bandgap semiconductors with indirect band gaps of 0.77 eV, 0.74 eV, and 0.35 eV, respectively. Mg2BIV has been recognized as a promising material for thermoelectric energy conversion at temperatures ranging from 500 K to 800 K. Compared to other thermoelectric materials operating in the similar temperature range, such as PbTe and filled skutterudites, the important aspects of Mg2BIV are non-toxic and earth-abundant elements. Based on classical thermoelectric theory, the material factor β ( m* / m e)3/2μκ L -1 can be utilized as the criterion for thermoelectric material selection, where m* is the density-of-states effective mass, me is the mass of an electron, μ is the carrier mobility, and κL is the lattice thermal conductivity. The β for magnesium silicides is 14, which is very high compared to 0.8 for iron silicides, 1.4 for manganese silicides, and 2.6 for silicon-germanium alloys. In this paper, basic phenomena of thermoelectricity and transport parameters for thermoelectric materials were briefly introduced, and thermoelectric properties of Mg2BIV synthesized by using a solid-state reaction were reviewed. In addition, various Mg2BIV compounds were discussed

Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

Science.gov (United States)

Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

2016-12-28

The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiC x (p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiC x (p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiC x (p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm -2 on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a V oc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p + /p-wafer full-side-passivated rear-side scheme shown here.

Enhancing shelf life of minimally processed multiplier onion using silicone membrane.

Science.gov (United States)

Naik, Ravindra; Ambrose, Dawn C P; Raghavan, G S Vijaya; Annamalai, S J K

2014-12-01

The aim of storage of minimal processed product is to increase the shelf life and thereby extend the period of availability of minimally processed produce. The silicone membrane makes use of the ability of polymer to permit selective passage of gases at different rates according to their physical and chemical properties. Here, the product stored maintains its own atmosphere by the combined effects of respiration process of the commodity and the diffusion rate through the membrane. A study was undertaken to enhance the shelf life of minimally processed multiplier onion with silicone membrane. The respiration activity was recorded at a temperature of 30 ± 2 °C (RH = 60 %) and 5 ± 1 °C (RH = 90 %). The respiration was found to be 23.4, 15.6, 10 mg CO2kg(-1)h(-1) at 5 ± 1 °C and 140, 110, 60 mg CO2kg(-1) h(-1) at 30 ± 2° for the peeled, sliced and diced multiplier onion, respectively. The respiration rate for the fresh multiplier onion was recorded to be 5, 10 mg CO2kg(-1) h(-1) at 5 ± 1 °C and 30 ± 1 ° C, respectively. Based on the shelf life studies and on the sensory evaluation, it was found that only the peeled multiplier onion could be stored. The sliced and diced multiplier onion did not have the required shelf life. The shelf life of the multiplier onion in the peel form could be increased from 4-5 days to 14 days by using the combined effect of silicone membrane (6 cm(2)/kg) and low temperature (5 ± 1 °C).

Synchrotron X-ray imaging applied to solar photovoltaic silicon

International Nuclear Information System (INIS)

Lafford, T A; Villanova, J; Plassat, N; Dubois, S; Camel, D

2013-01-01

Photovoltaic (PV) cell performance is dictated by the material of the cell, its quality and purity, the type, quantity, size and distribution of defects, as well as surface treatments, deposited layers and contacts. A synchrotron offers unique opportunities for a variety of complementary X-ray techniques, given the brilliance, spectrum, energy tunability and potential for (sub-) micron-sized beams. Material properties are revealed within in the bulk and at surfaces and interfaces. X-ray Diffraction Imaging (X-ray Topography), Rocking Curve Imaging and Section Topography reveal defects such as dislocations, inclusions, misorientations and strain in the bulk and at surfaces. Simultaneous measurement of micro-X-Ray Fluorescence (μ-XRF) and micro-X-ray Beam Induced Current (μ-XBIC) gives direct correlation between impurities and PV performance. Together with techniques such as microscopy and Light Beam Induced Current (LBIC) measurements, the correlation between structural properties and photovoltaic performance can be deduced, as well as the relative influence of parameters such as defect type, size, spatial distribution and density (e.g [1]). Measurements may be applied at different stages of solar cell processing in order to follow the evolution of the material and its properties through the manufacturing process. Various grades of silicon are under study, including electronic and metallurgical grades in mono-crystalline, multi-crystalline and mono-like forms. This paper aims to introduce synchrotron imaging to non-specialists, giving example results on selected solar photovoltaic silicon samples.

Integrated porous-silicon light-emitting diodes: A fabrication process using graded doping profiles

International Nuclear Information System (INIS)

Barillaro, G.; Diligenti, A.; Pieri, F.; Fuso, F.; Allegrini, M.

2001-01-01

A fabrication process, compatible with an industrial bipolar+complementary metal - oxide - semiconductor (MOS)+diffusion MOS technology, has been developed for the fabrication of efficient porous-silicon-based light-emitting diodes. The electrical contact is fabricated with a double n + /p doping, achieving a high current injection efficiency and thus lower biasing voltages. The anodization is performed as the last step of the process, thus reducing potential incompatibilities with industrial processes. The fabricated devices show yellow-orange electroluminescence, visible with the naked eye in room lighting. A spectral characterization of light emission is presented and briefly discussed. [copyright] 2001 American Institute of Physics

Recombination via point defects and their complexes in solar silicon

Energy Technology Data Exchange (ETDEWEB)

Peaker, A.R.; Markevich, V.P.; Hamilton, B. [Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Parada, G.; Dudas, A.; Pap, A. [Semilab, 2 Prielle Kornelia Str, 1117 Budapest (Hungary); Don, E. [Semimetrics, PO Box 36, Kings Langley, Herts WD4 9WB (United Kingdom); Lim, B.; Schmidt, J. [Institute for Solar Energy Research (ISFH) Hamlen, 31860 Emmerthal (Germany); Yu, L.; Yoon, Y.; Rozgonyi, G. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907 (United States)

2012-10-15

Electronic grade Czochralski and float zone silicon in the as grown state have a very low concentration of recombination generation centers (typically <10{sup 10} cm{sup -3}). Consequently, in integrated circuit technologies using such material, electrically active inadvertent impurities and structural defects are rarely detectable. The quest for cheap photovoltaic cells has led to the use of less pure silicon, multi-crystalline material, and low cost processing for solar applications. Cells made in this way have significant extrinsic recombination mechanisms. In this paper we review recombination involving defects and impurities in single crystal and in multi-crystalline solar silicon. Our main techniques for this work are recombination lifetime mapping measurements using microwave detected photoconductivity decay and variants of deep level transient spectroscopy (DLTS). In particular, we use Laplace DLTS to distinguish between isolated point defects, small precipitate complexes and decorated extended defects. We compare the behavior of some common metallic contaminants in solar silicon in relation to their effect on carrier lifetime and cell efficiency. Finally, we consider the role of hydrogen passivation in relation to transition metal contaminants, grain boundaries and dislocations. We conclude that recombination via point defects can be significant but in most multi-crystalline material the dominant recombination path is via decorated dislocation clusters within grains with little contribution to the overall recombination from grain boundaries. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Geochemistry of silicon isotopes

Energy Technology Data Exchange (ETDEWEB)

Ding, Tiping; Li, Yanhe; Gao, Jianfei; Hu, Bin [Chinese Academy of Geological Science, Beijing (China). Inst. of Mineral Resources; Jiang, Shaoyong [China Univ. of Geosciences, Wuhan (China).

2018-04-01

Silicon is one of the most abundant elements in the Earth and silicon isotope geochemistry is important in identifying the silicon source for various geological bodies and in studying the behavior of silicon in different geological processes. This book starts with an introduction on the development of silicon isotope geochemistry. Various analytical methods are described and compared with each other in detail. The mechanisms of silicon isotope fractionation are discussed, and silicon isotope distributions in various extraterrestrial and terrestrial reservoirs are updated. Besides, the applications of silicon isotopes in several important fields are presented.

Sequential purification and crystal growth for the production of low cost silicon substrates. Quarterly technical progress report No. 1, 15 September 1979-31 December 1979

Energy Technology Data Exchange (ETDEWEB)

Liaw, M.; Secco, F.; Ingle, B.; Down, D.

1980-02-01

Over the past several years, Motorola's Materials Technology Laboratory (MTL), has been conducting several projects with goals directed at the production of high quality low cost silicon crystals. One of the projects which is being investigated is the direct purification of MG-Si. A unique characteristic of the approach used by this project is the use of a crystal puller to perform both purification and crystal growth. Sequential steps of purification were taken. By the completion of this series of purification, the purified MG-Si melt will be further purified by impurity redistribution using ingot pulling. The final purified silicon will be in an ingot form of desired dimensions for slicing into silicon sheets. The sequential steps of purification include: (1) leaching of MG-Si charge, (2) phase separation, (3) reactive gas treatment, (4) liquid-liquid extraction (called Slagging), and (5) purification by redistribution of impurities using ingot pulling. Progress on items (1) and (2) is reported. (WHK)

Porous silicon nanoparticle as a stabilizing support for chondroitinase.

Science.gov (United States)

Daneshjou, Sara; Dabirmanesh, Bahareh; Rahimi, Fereshteh; Khajeh, Khosro

2017-01-01

Chondroitinase ABCI (cABCI) from Proteus vulgaris is a drug enzyme that can be used to treat spinal cord injuries. One of the main problems of chondroitinase ABC1 is its low thermal stability. The objective of the current study was to stabilize the enzyme through entrapment within porous silicon (pSi) nanoparticles. pSi was prepared by an electrochemical etch of p-type silicon using hydrofluoric acid/ethanol. The size of nanoparticles were determined 180nm by dynamic light scattering and the mean pore diameter was in the range of 40-60nm obtained by scanning electron microscopy. Enzymes were immobilized on porouse silicon nanoparticles by entrapment. The capacity of matrix was 35μg enzyme per 1mg of silicon. The immobilized enzyme displayed lower V max values compared to the free enzyme, but Km values were the same for both enzymes. Immobilization significantly increased the enzyme stability at various temperatures (-20, 4, 25 and 37°C). For example, at 4°C, the free enzyme (in 10mM imidazole) retained 20% of its activity after 100min, while the immobilized one retained 50% of its initial activity. Nanoparticles loading capacity and the enzyme release rate showed that the selected particles could be a pharmaceutically acceptable carrier for chondroitinase. Copyright © 2016 Elsevier B.V. All rights reserved.

Simulation and analysis of Au-MgF2 structure in plasmonic sensor in near infrared spectral region

Science.gov (United States)

Sharma, Anuj K.

2018-05-01

Plasmonic sensor based on metal-dielectric combination of gold and MgF2 layers is studied in near infrared (NIR) spectral region. An emphasis is given on the effect of variable thickness of MgF2 layer in combination with operating wavelength and gold layer thickness on the sensor's performance in NIR. It is established that the variation in MgF2 thickness in connection with plasmon penetration depth leads to significant variation in sensor's performance. The analysis leads to a conclusion that taking smaller values of MgF2 layer thickness and operating at longer NIR wavelength leads to enhanced sensing performance. Also, fluoride glass can provide better sensing performance than chalcogenide glass and silicon substrate.

Crystal chemistry of six-coordinated silicon: A key to understanding the earth's deep interior

International Nuclear Information System (INIS)

Finger, L.W.; Hazen, R.M.

1991-01-01

A survey of high-pressure silicates reveals 12 distinct high-density structural topologies with octahedral Si. Seven of these structure types - stishovite, perovskite, ilmenite, hollandite, calcium ferrite, pyrochlore and K 2 NiF 4 type - contain only six-corrdinated silicon. Other high-pressure silicates, including those with the garnet, pyroxene, wadeite, anhydrous phase B and phase B structures, contain both tetrahedral and octahedral Si. Five systematic trends among these dozen structures suggest the existence of other, as yet unobserved, possible mantle Si phases. The criteria are: (1) Structures like rutile, hollandite and calcium ferrite formed from edge-sharing chains of silicon octahedra; (2) germanates synthesized at room pressure with octahedral Ge; (3) isomorphs of room-pressure oxides with 3+ or 4+ transition-metal cations; (4) high-pressure magnesium silicates related to room-pressure aluminates by the substitution 2Al→Mg+Si; and (5) the homologous structures in system Mg-Si-O-H that includes phase B and anhydrous phase B. Each of these criteria can be used to predict other potential octahedral Si phases. Of special interest are predicted structure types that fulfill more than one criterion: Diaspore-type (MgSi)O 2 (OH) 2 , aerugite-type Mg 10 Si 3 O 16 , sphene-type CaSi 2 O 5 , benitoite-type BaSi 4 O 9 , gibbsite-type MgSi(OH) 6 and pseudobrookite-type Fe 2 SiO 5 . (orig.)

Dielectric discontinuity at interfaces in the atomic-scale limit: permittivity of ultrathin oxide films on silicon.

Science.gov (United States)

Giustino, Feliciano; Umari, Paolo; Pasquarello, Alfredo

2003-12-31

Using a density-functional approach, we study the dielectric permittivity across interfaces at the atomic scale. Focusing on the static and high-frequency permittivities of SiO2 films on silicon, for oxide thicknesses from 12 A down to the atomic scale, we find a departure from bulk values in accord with experiment. A classical three-layer model accounts for the calculated permittivities and is supported by the microscopic polarization profile across the interface. The local screening varies on length scales corresponding to first-neighbor distances, indicating that the dielectric transition is governed by the chemical grading. Silicon-induced gap states are shown to play a minor role.

The potential of postharvest silicon dips to regulate phenolics in ...

African Journals Online (AJOL)

This study investigated the ability of silicon dips to enhance the phenolic content in order to reduce the incidence of chilling injury in lemon fruit. Fruits were obtained from two farms and dipped in 0, 50, 150 and 250 mg L-1 solutions of K2SiO3 for 30 min and afterward, fruit were air dried and waxed. Thereafter, fruits were ...

Silicon heterojunction transistor

International Nuclear Information System (INIS)

Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

1979-01-01

SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

Effect of silicon application on physiological characteristics and growth of wheat (Triticum aestivum L. under drought stress condition

Directory of Open Access Journals (Sweden)

A. Karmollachaab

2016-05-01

Full Text Available In order to investigate the effect of silicon application on some physiological characteristics and growth of Wheat (Triticum aestivum L. under late drought stress condition, an experiment was conducted at the Agriculture and Natural Resources University of Ramin, Khuzestan during year 2012. The experiment was conducted in the open environment as factorial randomized complete block design with three levels of drought stress (irrigation after 25, 50 and 75% depletion of available water content as the first factor and four levels of silicon (0, 10, 20 and 30 mg Si.kg-1 soil as the second factor with three replications. The results showed that drought stress imposed a negative significant effect on all traits. The drought stress led to increased electrolyte leakage and proline content, cuticular wax, leaf silicon concentration, superoxide dismutase activity (SOD and grain potassium were decreased. The severe drought stress has most effect on electrolyte leakage (up to 53%. The application of silicon except the shoot/root parameter, on all characters have been affected so that application of 30 mg Si.kg-1 soil led to decrease electrolyte leakage up to 22.5% and increased SOD activity, proline content, cuticular wax grain K and flag leaf Si concentration, 25, 12.8, 21, 17 and 30% compared to control, respectively. In general, the results showed a positive effect of silicon on wheat plant under stress conditions that were higher than no stress condition.

Leaching of assimilable silicon species from fly ash

International Nuclear Information System (INIS)

Piekos, R.; Paslawska, S.

1998-01-01

The objective of this study was to investigate the leaching of assimilable silicon species from coal fly ash with distilled water, sea waterand synthetic sea water at various fly ash/water ratios, pHs and temperatures. At the 1 g/100 ml fly ash/water ratio, less than 1 mg Si was found in 11 of aqueous slurries over the pH range 4-8 after 2 h at ambient temperature. The leaching was most effective at pH 10.5. At the fly ash/waterratio indicated, the pH of the suspensions decreased from 10.4 to 8.4 after 5days. The pH of fly ash slurries in sea water varied only slightly over time as compared with that in distilled water. Generally, the leaching of assimilable silicon species with distilled water was more intense than that with the sea water. 27 refs., 6 figs., 3 tabs

Study of electron-beam-evaporated MgO films using electron diffraction, optical absorption and cathodoluminescence

Energy Technology Data Exchange (ETDEWEB)

Aboelfotoh, M.O.; Ramsey, J.N.

1982-05-21

Reflection high energy electron diffraction, optical absorption and cathodoluminescence were used to study MgO films deposited onto fused silica, single-crystal silicon and LiF substrates at various temperatures. Results showed that some of the same optical absorption and emission bands observed in X- or UV-irradiated, additively colored or mechanically deformed MgO crystals were observed in evaporated MgO films. The peak positions and the relative peak intensities of the optical absorption and emission bands depended on the substrate temperature during film deposition as well as on the structure of the film. The effect of heating the films in air and vacuum on the optical absorption and emission bands is also discussed.

Suppression of Mg propagation into subsequent layers grown by MOCVD

Science.gov (United States)

Agarwal, Anchal; Tahhan, Maher; Mates, Tom; Keller, Stacia; Mishra, Umesh

2017-01-01

Low temperature (LT) flow modulation epitaxy (FME) or "pulsed" growth was successfully used to prevent magnesium from Metalorganic Chemical Vapor Deposition (MOCVD) grown p-GaN:Mg layers riding into subsequently deposited n-type layers. Mg concentration in the subsequent layers was lowered from ˜1 × 1018 cm-3 for a medium temperature growth at 950 °C to ˜1 × 1016 cm-3 for a low temperature growth at 700 °C via FME. The slope of the Mg concentration drop in the 700 °C FME sample was 20 nm/dec—the lowest ever demonstrated by MOCVD. For growth on Mg implanted GaN layers, the drop for a medium temperature regrowth at 950 °C was ˜10 nm/dec compared to >120 nm/dec for a high temperature regrowth at 1150 °C. This drop-rate obtained at 950 °C or lower was maintained even when the growth temperature in the following layers was raised to 1150 °C. A controlled silicon doping series using LT FME was also demonstrated with the lowest and highest achieved doping levels being 5 × 1016 cm-3 and 6 × 1019 cm-3, respectively.

Microstructure and Mechanical Properties of Al-5Mg-0.8Mn Alloys with Various Contents of Fe and Si Cast under Near-Rapid Cooling

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Yulin Liu

2017-10-01

Full Text Available Al-5Mg-0.8Mn alloys (AA5083 with various iron and silicon contents were cast under near-rapid cooling and rolled into sheets. The aim was to study the feasibility of minimizing the deteriorating level of the harmful Fe-rich phases on the mechanical properties through refining the intermetallics by significantly increasing the casting rate. The results showed that the size and density of the intermetallic particles that remained in the hot bands and the cold rolled sheets increased as the contents of iron and silicon in the alloys were increased. However, the increment of the particle sizes was limited due to the significant refinement of the intermetallics formed during casting under near-rapid cooling. The mechanical properties of the alloys reduced as the contents of iron and silicon in the alloys increased. However, the decrement of tensile strengths and ductility was quite small. Therefore, higher contents of iron and silicon could be used in the Al-5Mg-0.8Mn alloy (AA5083 alloy when the material is cast under near-rapid cooling, such as in the continuous strip casting process.

The Rechargeability of Silicon-Air Batteries

Science.gov (United States)

2012-06-01

an Si-air electrochemical cell a source of water for other applications. Metal-air batteries, silicon-air, electrochemistry , rechargeable batteries UU...be based on constant amount of water in the IL.  The electrochemistry has to be based on more robust reference electrode. Some use of ferrocence...MgO  -569.4  -601.7  3942  6859  Zn  Zn + 1/2O2 ZnO   -320.8  -350.7  1363  9677  Si  Si + O2 SiO2  -856.5  -910.9  8470  21090  7 electrode. RTIL

Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

Science.gov (United States)

Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

2013-07-29

We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

Phase I Clinical Trial Assessing Temozolomide and Tamoxifen With Concomitant Radiotherapy for Treatment of High-Grade Glioma

International Nuclear Information System (INIS)

Patel, Shilpen; DiBiase, Steven; Meisenberg, Barry; Flannery, Todd; Patel, Ashish; Dhople, Anil; Cheston, Sally; Amin, Pradip

2012-01-01

Purpose: The new standard treatment of glioblastoma multiforme is concurrent radiotherapy (RT) and temozolomide. The proliferation of high-grade gliomas might be partly dependent on protein kinase C-mediated pathways. Tamoxifen has been shown in vitro to inhibit protein kinase C through estrogen receptor-independent antineoplastic effects. This Phase I trial was designed to determine the maximal tolerated dose (MTD) of tamoxifen when given with temozolomide and concurrent RT to patients with high-grade gliomas. Methods and Materials: A total of 17 consecutive patients in four cohorts with World Health Organization Grade 3 (n = 2) and 4 (n = 15) gliomas were given tamoxifen twice daily during 6 weeks of concurrent RT and temozolomide. Eligibility included histologic diagnosis, age >18 years old, Karnofsky performance status ≥60, and no previous brain RT or chemotherapy. The starting dose was 50 mg/m 2 divided twice daily. If no dose-limiting toxicities (DLTs) occurred in 3 patients, the dose was escalated in 25-mg/m 2 increments until the MTD was reached. When ≥2 patients within a cohort experienced a DLT, the MTD had been exceeded. Temozolomide was given with RT at 75 mg/m 2 . A dose of 60 Gy in 2 Gy/d fractions to a partial brain field was delivered. Results: A total of 6 patients in Cohort 4 had received tamoxifen at 125 mg/m 2 . One patient was excluded, and the fourth patient developed Grade 4 thrombocytopenia (DLT). Thus, 3 more patients needed to be enrolled. A deep venous thrombosis (DLT) occurred in the sixth patient. Thus, the MTD was 100 mg/m 2 . Conclusions: The MTD of tamoxifen was 100 mg/m 2 when given concurrently with temozolomide 75 mg/m 2 and RT. Tamoxifen might have a role in the initial treatment of high-grade gliomas and should be studied in future Phase II trials building on the newly established platform of concurrent chemoradiotherapy.

Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II

Energy Technology Data Exchange (ETDEWEB)

Sundberg, G.J.

1994-01-01

Techniques were developed to produce reliable silicon nitride to silicon nitride (NCX-5101) curved joins which were used to manufacture spin test specimens as a proof of concept to simulate parts such as a simple rotor. Specimens were machined from the curved joins to measure the following properties of the join interlayer: tensile strength, shear strength, 22 C flexure strength and 1370 C flexure strength. In parallel, extensive silicon nitride tensile creep evaluation of planar butt joins provided a sufficient data base to develop models with accurate predictive capability for different geometries. Analytical models applied satisfactorily to the silicon nitride joins were Norton's Law for creep strain, a modified Norton's Law internal variable model and the Monkman-Grant relationship for failure modeling. The Theta Projection method was less successful. Attempts were also made to develop planar butt joins of siliconized silicon carbide (NT230).

Formation of Al2O3-HfO2 Eutectic EBC Film on Silicon Carbide Substrate

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Kyosuke Seya

2015-01-01

Full Text Available The formation mechanism of Al2O3-HfO2 eutectic structure, the preparation method, and the formation mechanism of the eutectic EBC layer on the silicon carbide substrate are summarized. Al2O3-HfO2 eutectic EBC film is prepared by optical zone melting method on the silicon carbide substrate. At high temperature, a small amount of silicon carbide decomposed into silicon and carbon. The components of Al2O3 and HfO2 in molten phase also react with the free carbon. The Al2O3 phase reacts with free carbon and vapor species of AlO phase is formed. The composition of the molten phase becomes HfO2 rich from the eutectic composition. HfO2 phase also reacts with the free carbon and HfC phase is formed on the silicon carbide substrate; then a high density intermediate layer is formed. The adhesion between the intermediate layer and the substrate is excellent by an anchor effect. When the solidification process finished before all of HfO2 phase is reduced to HfC phase, HfC-HfO2 functionally graded layer is formed on the silicon carbide substrate and the Al2O3-HfO2 eutectic structure grows from the top of the intermediate layer.

Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

Science.gov (United States)

Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

2018-06-01

Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

Fluorescence and thermoluminescence in silicon oxide films rich in silicon

International Nuclear Information System (INIS)

Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

2009-10-01

In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

Electron confinement at diffuse ZnMgO/ZnO interfaces

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Maddison L. Coke

2017-01-01

Full Text Available Abrupt interfaces between ZnMgO and ZnO are strained due to lattice mismatch. This strain is relaxed if there is a gradual incorporation of Mg during growth, resulting in a diffuse interface. This strain relaxation is however accompanied by reduced confinement and enhanced Mg-ion scattering of the confined electrons at the interface. Here we experimentally study the electronic transport properties of the diffuse heteroepitaxial interface between single-crystal ZnO and ZnMgO films grown by molecular-beam epitaxy. The spatial extent of the interface region is controlled during growth by varying the zinc flux. We show that, as the spatial extent of the graded interface is reduced, the enhancement of electron mobility due to electron confinement more than compensates for any suppression of mobility due to increased strain. Furthermore, we determine the extent to which scattering of impurities in the ZnO substrate limits the electron mobility in diffuse ZnMgO–ZnO interfaces.

Electron confinement at diffuse ZnMgO/ZnO interfaces

Science.gov (United States)

Coke, Maddison L.; Kennedy, Oscar W.; Sagar, James T.; Warburton, Paul A.

2017-01-01

Abrupt interfaces between ZnMgO and ZnO are strained due to lattice mismatch. This strain is relaxed if there is a gradual incorporation of Mg during growth, resulting in a diffuse interface. This strain relaxation is however accompanied by reduced confinement and enhanced Mg-ion scattering of the confined electrons at the interface. Here we experimentally study the electronic transport properties of the diffuse heteroepitaxial interface between single-crystal ZnO and ZnMgO films grown by molecular-beam epitaxy. The spatial extent of the interface region is controlled during growth by varying the zinc flux. We show that, as the spatial extent of the graded interface is reduced, the enhancement of electron mobility due to electron confinement more than compensates for any suppression of mobility due to increased strain. Furthermore, we determine the extent to which scattering of impurities in the ZnO substrate limits the electron mobility in diffuse ZnMgO-ZnO interfaces.

Buried oxide layer in silicon

Science.gov (United States)

Sadana, Devendra Kumar; Holland, Orin Wayne

2001-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Investigation on the improved radiation hardness of silicon detectors with high oxygen concentration

CERN Document Server

Moll, Michael; Lindström, G

2000-01-01

We present an investigation on the influence of the oxygen concentration on radiation-induced changes in the effective doping concentration of silicon detectors. Diodes fabricated from silicon with interstitial oxygen content ranging from below 2*10/sup 14/ to 9*10/sup 17/ cm/sup -3/ have been irradiated with fast neutrons up to a fluence of 2*10/sup 15/ cm/sup -2/. Our main interest focused on the so-called stable damage component in the change of the effective doping concentration being of prime importance for the application of silicon detectors in high-energy physics experiments. We demonstrate, that with a high oxygen enrichment the donor removal is appreciably reduced, reaching a value of only 10601130f the initial doping concentration for [O/sub i/]=9*10/sup 17/ cm/sup -3/, while for normal detector grade material with [O/sub i/] below 5*10/sup 16/ cm /sup -3/ that value is 60-90Furthermore, we show that the fluence proportional introduction of stable acceptors is independent of the oxygen concentratio...

Microstructural stability concerning a potential nuclear use of Al-Mg-Si

International Nuclear Information System (INIS)

Urreta de Pereyra, S.E.

1990-01-01

Mechanical properties and microstructures in an Al-Mg-Si alloy (6061) are known to change during irradiation. Many authors report that mechanical strength reduces after irradiation and that the main cause of this drastic softening was shown to be the dissolution of hardening precipitates. In this work, the stability of needle-shaped precipitates before irradiation is studied. Evidence is provided to suggest that β' may not transform directly in β ' by growth, but that another nucleation event is necessary. For concentrations of about 1wt% Mg 2 Si, accidental reversion treatments of short times above 250 deg C are found to lead to a catastrophic drop in strength as a result of β' phase dissolution without simultaneous precipitation of β ' . It was also found that these phases may differ in composition as well as in structure as reported in the literature. Small precipitates are found in grain boundaries that are richer in silicon than the equilibrium phase Mg 2 Si. (Author)

Ion beam studied of silicon oxynitride and silicon nitroxide thin layers

International Nuclear Information System (INIS)

Oude Elferink, J.B.

1989-01-01

In this the processes occurring during high temperature treatments of silicon oxynitride and silicon oxide layers are described. Oxynitride layers with various atomic oxygen to nitrogen concentration ration (O/N) are considered. The high energy ion beam techniques Rutherford backscattering spectroscopy, elastic recoil detection and nuclear reaction analysis have been used to study the layer structures. A detailed discussion of these ion beam techniques is given. Numerical methods used to obtain quantitative data on elemental compositions and depth profiles are described. The electrical compositions and depth profiles are described. The electrical properties of silicon nitride films are known to be influenced by the behaviour of hydrogen in the film during high temperature anneling. Investigations of the behaviour of hydrogen are presented. Oxidation of silicon (oxy)nitride films in O 2 /H 2 0/HCl and nitridation of silicon dioxide films in NH 3 are considered since oxynitrides are applied as an oxidation mask in the LOCOS (Local oxidation of silicon) process. The nitridation of silicon oxide layers in an ammonia ambient is considered. The initial stage and the dependence on the oxide thickness of nitrogen and hydrogen incorporation are discussed. Finally, oxidation of silicon oxynitride layers and of silicon oxide layers are compared. (author). 76 refs.; 48 figs.; 1 tab

Process design and simulation for optimizing the oxygen concentration in Czochralski-grown single-crystal silicon

International Nuclear Information System (INIS)

Jung, Y. J.; Kim, W. K.; Jung, J. H.

2014-01-01

The highest-concentration impurity in a single-crystal silicon ingot is oxygen, which infiltrates the ingot during growth stage. This oxygen adversely affects the wafer is quality. This study was aimed at finding an optimal design for the Czochralski (Cz) process to enable high-quality and low cost (by reducing power consumption) wafer production by controlling the oxygen concentration in the silicon ingots. In the Cz process, the characteristics of silicon ingots during crystallization are greatly influenced by the design and the configuration of the hot zone, and by crystallization rate. In order to identify process conditions for obtaining an optimal oxygen concentration of 11 - 13 ppma (required for industrial-grade ingots), designed two shield shapes for the hot zone. Furthermore, oxygen concentrations corresponding to these two shapes were compared by evaluating each shape at five different production speeds. In addition, simulations were performed to identify the optimal shield design for industrial applications.

Process design and simulation for optimizing the oxygen concentration in Czochralski-grown single-crystal silicon

Energy Technology Data Exchange (ETDEWEB)

Jung, Y. J.; Kim, W. K.; Jung, J. H. [Yeungnam University, Gyeongsan (Korea, Republic of)

2014-08-15

The highest-concentration impurity in a single-crystal silicon ingot is oxygen, which infiltrates the ingot during growth stage. This oxygen adversely affects the wafer is quality. This study was aimed at finding an optimal design for the Czochralski (Cz) process to enable high-quality and low cost (by reducing power consumption) wafer production by controlling the oxygen concentration in the silicon ingots. In the Cz process, the characteristics of silicon ingots during crystallization are greatly influenced by the design and the configuration of the hot zone, and by crystallization rate. In order to identify process conditions for obtaining an optimal oxygen concentration of 11 - 13 ppma (required for industrial-grade ingots), designed two shield shapes for the hot zone. Furthermore, oxygen concentrations corresponding to these two shapes were compared by evaluating each shape at five different production speeds. In addition, simulations were performed to identify the optimal shield design for industrial applications.

Phase II trial of cystemustine, a new nitrosourea, as treatment of high-grade brain tumors in adults.

Science.gov (United States)

Roche, H; Cure, H; Adenis, A; Fargeot, P; Terret, C; Lentz, M A; Madelmont, J C; Fumoleau, P; Hanausk, A; Chollet, P

2000-09-01

This study included 39 patients (37 evaluable, of whom 30 patients with recurrent gliomas and 7 patients with gliomas untreated by radiotherapy); they were enrolled into a phase II trial using a new nitrosourea, cystemustine, administrated every 2 weeks at 60 mg/m2 as a 15 min-infusion. Pathology at inclusion was (WHO classification): 14 glioblastomas, 20 grade 3-4 astrocytomas and 3 grade 3 oligodendrogliomas. Four partial responses have been obtained, giving an overall response rate of 10.8%. Four additional patients had a partial response, which for various reasons was not confirmed 4 weeks later; 12 patients had a stable disease for at least 8 weeks, 15 patients had progressive disease. Of the 4 responses, 2 were with a grade 3 oligodendroglioma and 2 glioblastoma. Toxicity (WHO grading) was mainly hematological: leukopenia (16.2% grade 3-4), neutropenia (29.7% grade 3-4), thrombopenia (27% grade 3-4). No other toxicity greater than grade 2 was observed. In conclusion, cystemustine at 60 mg/m2 has moderate clinical activity in relapsing glioma. Our results warrant further investigation of this agent with an increased dose or modified scheme.

Nonlinear silicon photonics

Science.gov (United States)

Tsia, Kevin K.; Jalali, Bahram

2010-05-01

An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

Release of Si from Silicon, a Ferrosilicon (FeSi) Alloy and a Synthetic Silicate Mineral in Simulated Biological Media

Science.gov (United States)

Herting, Gunilla; Jiang, Tao; Sjöstedt, Carin; Odnevall Wallinder, Inger

2014-01-01

Unique quantitative bioaccessibility data has been generated, and the influence of surface/material and test media characteristics on the elemental release process were assessed for silicon containing materials in specific synthetic body fluids at certain time periods at a fixed loading. The metal release test protocol, elaborated by the KTH team, has previously been used for classification, ranking, and screening of different alloys and metals. Time resolved elemental release of Si, Fe and Al from particles, sized less than 50 µm, of two grades of metallurgical silicon (high purity silicon, SiHG, low purity silicon, SiLG), an alloy (ferrosilicon, FeSi) and a mineral (aluminium silicate, AlSi) has been investigated in synthetic body fluids of varying pH, composition and complexation capacity, simple models of for example dermal contact and digestion scenarios. Individual methods for analysis of released Si (as silicic acid, Si(OH)4) in synthetic body fluids using GF-AAS were developed for each fluid including optimisation of solution pH and graphite furnace parameters. The release of Si from the two metallurgical silicon grades was strongly dependent on both pH and media composition with the highest release in pH neutral media. No similar effect was observed for the FeSi alloy or the aluminium silicate mineral. Surface adsorption of phosphate and lactic acid were believed to hinder the release of Si whereas the presence of citric acid enhanced the release as a result of surface complexation. An increased presence of Al and Fe in the material (low purity metalloid, alloy or mineral) resulted in a reduced release of Si in pH neutral media. The release of Si was enhanced for all materials with Al at their outermost surface in acetic media. PMID:25225879

Release of Si from silicon, a ferrosilicon (FeSi alloy and a synthetic silicate mineral in simulated biological media.

Directory of Open Access Journals (Sweden)

Gunilla Herting

Full Text Available Unique quantitative bioaccessibility data has been generated, and the influence of surface/material and test media characteristics on the elemental release process were assessed for silicon containing materials in specific synthetic body fluids at certain time periods at a fixed loading. The metal release test protocol, elaborated by the KTH team, has previously been used for classification, ranking, and screening of different alloys and metals. Time resolved elemental release of Si, Fe and Al from particles, sized less than 50 µm, of two grades of metallurgical silicon (high purity silicon, SiHG, low purity silicon, SiLG, an alloy (ferrosilicon, FeSi and a mineral (aluminium silicate, AlSi has been investigated in synthetic body fluids of varying pH, composition and complexation capacity, simple models of for example dermal contact and digestion scenarios. Individual methods for analysis of released Si (as silicic acid, Si(OH4 in synthetic body fluids using GF-AAS were developed for each fluid including optimisation of solution pH and graphite furnace parameters. The release of Si from the two metallurgical silicon grades was strongly dependent on both pH and media composition with the highest release in pH neutral media. No similar effect was observed for the FeSi alloy or the aluminium silicate mineral. Surface adsorption of phosphate and lactic acid were believed to hinder the release of Si whereas the presence of citric acid enhanced the release as a result of surface complexation. An increased presence of Al and Fe in the material (low purity metalloid, alloy or mineral resulted in a reduced release of Si in pH neutral media. The release of Si was enhanced for all materials with Al at their outermost surface in acetic media.

The use of electro-deoxidation in molten salts to reduce the energy consumption of solar grade silicon and increase the output of PV solar cells

Directory of Open Access Journals (Sweden)

Paul R. Coxon

2015-12-01

Full Text Available Solar photovoltaics, based upon silicon, are the most popular form of solar cell with efficiencies around 20%. These efficiencies can be further increased by employing light trapping schemes to minimise optical losses through scattering and reflection which enhances the amount of light absorbed and number of photo-carriers generated. Typical approaches employ antireflection coatings (ARCs or texturise the surface of the silicon disks, so that the structure consists of an array of needles which can absorb most of the light. Usually, these structures are created by leaching the silicon with hydrofluoric-based acids or by reactive ion etching (RIE methods. This paper reviews some of the methods for improving the energy efficiency of silicon production, and describes the use of electro-deoxidation of SiO2 layers, on silicon, in molten calcium chloride to form nano-porous black silicon (b-Si structures. By coating b-Si surface with TiO2, a common ARC, extremely black surfaces with negligible reflectance of about 0.1%, are produced, which can have applications for low-cost high efficiency solar cells.

Liquid phase epitaxial growth of silicon on porous silicon for photovoltaic applications

International Nuclear Information System (INIS)

Berger, S.; Quoizola, S.; Fave, A.; Kaminski, A.; Perichon, S.; Barbier, D.; Laugier, A.

2001-01-01

The aim of this experiment is to grow a thin silicon layer ( 2 atmosphere, and finally LPE silicon growth with different temperature profiles in order to obtain a silicon layer on the sacrificial porous silicon (p-Si). We observed a pyramidal growth on the surface of the (100) porous silicon but the coalescence was difficult to obtain. However, on a p-Si (111) oriented wafer, homogeneous layers were obtained. (orig.)

Assessment of the effect of silicon on antioxidant enzymes in cotton plants by multivariate analysis.

Science.gov (United States)

Alberto Moldes, Carlos; Fontão de Lima Filho, Oscar; Manuel Camiña, José; Gabriela Kiriachek, Soraya; Lia Molas, María; Mui Tsai, Siu

2013-11-27

Silicon has been extensively researched in relation to the response of plants to biotic and abiotic stress, as an element triggering defense mechanisms which activate the antioxidant system. Furthermore, in some species, adding silicon to unstressed plants modifies the activity of certain antioxidant enzymes participating in detoxifying processes. Thus, in this study, we analyzed the activity of antioxidant enzymes in leaves and roots of unstressed cotton plants fertilized with silicon (Si). Cotton plants were grown in hydroponic culture and added with increasing doses of potassium silicate; then, the enzymatic activity of catalase (CAT), guaiacol peroxidase (GPOX), ascorbate peroxidase (APX), and lipid peroxidation were determined. Using multivariate analysis, we found that silicon altered the activity of GPOX, APX, and CAT in roots and leaves of unstressed cotton plants, whereas lipid peroxidation was not affected. The analysis of these four variables in concert showed a clear differentiation among Si treatments. We observed that enzymatic activities in leaves and roots changed as silicon concentration increased, to stabilize at 100 and 200 mg Si L(-1) treatments in leaves and roots, respectively. Those alterations would allow a new biochemical status that could be partially responsible for the beneficial effects of silicon. This study might contribute to adjust the silicon application doses for optimal fertilization, preventing potential toxic effects and unnecessary cost.

COMPARISON OF POLYJET PRINTING AND SILICON MOULDING AS RAPID PLASTIC MOULDING SOLUTIONS

Directory of Open Access Journals (Sweden)

R. Singh

2012-12-01

Full Text Available The aim of the present investigation is to compare two rapid molding (RM solutions, namely polyjet printing (PP and silicon molding (SM, for the manufacture of plastic components. The comparison has been made on the basis of dimensional accuracy (as per IT grades, mechanical properties (namely surface hardness, surface roughness and production cost. The comparison of the experimental results will serve as a yard stick for the further selection of processes for industrial applications.

Oral antioxidant treatment partly improves integrity of human sperm DNA in infertile grade I varicocele patients.

Science.gov (United States)

Gual-Frau, Josep; Abad, Carlos; Amengual, María J; Hannaoui, Naim; Checa, Miguel A; Ribas-Maynou, Jordi; Lozano, Iris; Nikolaou, Alexandros; Benet, Jordi; García-Peiró, Agustín; Prats, Juan

2015-09-01

Infertile males with varicocele have the highest percentage of sperm cells with damaged DNA, compared to other infertile groups. Antioxidant treatment is known to enhance the integrity of sperm DNA; however, there are no data on the effects in varicocele patients. We thus investigated the potential benefits of antioxidant treatment specifically in grade I varicocele males. Twenty infertile patients with grade I varicocele were given multivitamins (1500 mg L-Carnitine, 60 mg vitamin C, 20 mg coenzyme Q10, 10 mg vitamin E, 200 μg vitamin B9, 1 μg vitamin B12, 10 mg zinc, 50 μg selenium) daily for three months. Semen parameters including total sperm count, concentration, progressive motility, vitality, and morphology were determined before and after treatment. In addition, sperm DNA fragmentation and the amount of highly degraded sperm cells were analyzed by Sperm Chromatin Dispersion. After treatment, patients showed an average relative reduction of 22.1% in sperm DNA fragmentation (p = 0.02) and had 31.3% fewer highly degraded sperm cells (p = 0.07). Total numbers of sperm cells were increased (p = 0.04), but other semen parameters were unaffected. These data suggest that sperm DNA integrity in grade I varicocele patients may be improved by oral antioxidant treatment.

Gemcitabine and docetaxel in relapsed and unresectable high-grade osteosarcoma and spindle cell sarcoma of bone

OpenAIRE

Palmerini, E.; Jones, R. L.; Marchesi, E.; Paioli, A.; Cesari, M.; Longhi, A.; Meazza, C.; Coccoli, L.; Fagioli, F.; Asaftei, S.; Grignani, G.; Tamburini, A.; Pollack, S. M.; Picci, P.; Ferrari, S.

2016-01-01

Background Few new compounds are available for relapsed osteosarcoma. We retrospectively evaluated the activity of gemcitabine (G) plus docetaxel (D) in patients with relapsed high-grade osteosarcoma and high-grade spindle cell sarcoma of bone (HGS). Methods Patients receiving G 900?mg/m2 d 1, 8; D 75?mg/m2 d 8, every 21?days were eligible. Primary end-point: progression-free survival (PFS) at 4?months; secondary end-point: overall survival (OS) and response rate. Results Fifty-one patients w...

Effect of samarium (Sm) addition on the microstructures and mechanical properties of Al–7Si–0.7Mg alloys

International Nuclear Information System (INIS)

Qiu, Hongxu; Yan, Hong; Hu, Zhi

2013-01-01

Highlights: •Sm affected the secondary dendrite arm spacing of Al–7Si–0.7Mg alloy. •The coarse plate-like eutectic silicon was fully modified into a fine branched and particle structure when 0.6 wt.% Sm added. •The tensile properties were enhanced by the addition of Sm. •Sm has marked effects on eutectic temperature and the latent heat ΔH R on remelting behavior. •The morphology and chemical composition of Sm-rich intermetallics were studied. -- Abstract: The effects of samarium (Sm) additions (0–0.9 wt.%) on the microstructures and mechanical properties of Al–7Si–0.7Mg alloys have been studied in this article. The microstructures of the as-cast samples were examined by optical microscopy (OM) and scanning electron microscopy (SEM). The experimental results indicated that the rare earth Sm affected the secondary dendrite arm spacing (SDAS) of Al–7Si–0.7Mg alloy. And it was found that Sm had great modification effects on the microstructures of eutectic silicon. When 0.6 wt.% Sm was added to the alloy, the coarse plate-like eutectic silicon was fully modified into a fine fibrous structure; the dendrites of Al–7Si–0.7Mg alloy was best refined. The mechanical properties were investigated by tensile test. The findings indicate that the tensile properties and elongation were improved by the addition of Sm. And a good combination of ultimate tensile strength (215 MPa) and elongation (3.3%) was obtained when the Sm addition was up to 0.6 wt.%. Furthermore the results of thermal analysis reveal that Sm addition had marked effects on eutectic temperature and the latent heat ΔH R on remelting behavior

Crystal spectroscopy of silicon aero-gel end-caps driven by a dynamic hohlraum on Z

International Nuclear Information System (INIS)

Nash, T.J.; Sanford, T.W.L.; Mock, R.C.; Leeper, R.J.; Chandler, G.A.; Bailey, J.E.; McKenney, J.L.; Mehlhorn, T.A.; Seaman, J.F.; McGurn, J.; Schroen, D.; Russell, C.; Lake, P.E.; Jobe, D.O.; Gilliland, T.; Nielsen, D.S.; Lucas, J.; Moore, T.; Torres, J.A.; MacFarlane, J.J.; Apruzese, J.P.; Chrien, R.; Idzorek, G.; Peterson, D.L.; Watt, R.

2005-01-01

We present results from crystal spectroscopic analysis of silicon aero-gel foams heated by dynamic hohlraums on Z. The dynamic hohlraum on Z creates a radiation source with a 230-eV average temperature over a 2.4-mm diameter. In these experiments silicon aero-gel foams with 10-mg/cm3 densities and 1.7-mm lengths were placed on both ends of the dynamic hohlraum. Several crystal spectrometers were placed both above and below the z-pinch to diagnose the temperature of the silicon aero-gel foam using the K-shell lines of silicon. The crystal spectrometers were (1) temporally integrated and spatially resolved, (2) temporally resolved and spatially integrated, and (3) both temporally and spatially resolved. The results indicate that the dynamic hohlraum heats the silicon aero-gel to approximately 150-eV at peak power. As the dynamic hohlraum source cools after peak power the silicon aero-gel continues to heat and jets axially at an average velocity of approximately 50-cm/μs. The spectroscopy has also shown that the reason for the up/down asymmetry in radiated power on Z is that tungsten enters the line-of-sight on the bottom of the machine much more than on the top

Dietary Silicon Intake of Korean Young Adult Males and Its Relation to their Bone Status.

Science.gov (United States)

Choi, Mi-Kyeong; Kim, Mi-Hyun

2017-03-01

Accumulated data suggests a positive effect of silicon on bone health; however, limited research exists on the silicon content of foods. To further the understanding of the relationship between dietary silicon intake and bone health, a food composition database of commonly consumed foods in Korea is required. For quantitative data on the intake levels of silicon, we analyzed the silicon content of 365 food items commonly consumed in Korea using inductively coupled plasma-atomic emission spectrometry following microwave-assisted digestion. To investigate the dietary silicon intake status and to examine the potential role of dietary silicon intake in the bone status of men, a total of 400 healthy Korean adult males aged 19-25 were observed for their diet intake and calcaneus bone density using the 24-h recall method and quantitative ultrasound, respectively. Clinical markers reflecting bone metabolism such as serum total alkaline phosphatase, N-mid osteocalcin, and type 1 collagen C-terminal telopeptide concentrations were also analyzed. Silicon intake of the subjects was estimated as 37.5 ± 22.2 mg/day. Major food sources of dietary silicon in the Korean male were cereal and cereal products (25.6 % of total silicon intake), vegetables (22.7 %), beverages and liquors (21.2 %), and milk and milk products (7.0 %). Silicon intake correlated positively with age, weight, energy intake, protein intake, calcium intake, and alcohol intake. After adjusted for age, weight, energy intake, protein intake, calcium intake, alcohol intake, smoking cigarettes, and regular exercise status, daily total silicon intake had no correlation with calcaneus bone density and the bone metabolism markers, but silicon intake from vegetables had a positive correlation with serum total alkaline phosphatase activity, a bone formation maker. These findings show the possible positive relationship between dietary silicon intake from vegetables and the bone formation of young adult males. Further

Polycrystalline Silicon: a Biocompatibility Assay

International Nuclear Information System (INIS)

Pecheva, E.; Fingarova, D.; Pramatarova, L.; Hikov, T.; Laquerriere, P.; Bouthors, Sylvie; Dimova-Malinovska, D.; Montgomery, P.

2010-01-01

Polycrystalline silicon (poly-Si) layers were functionalized through the growth of biomimetic hydroxyapatite (HA) on their surface. HA is the mineral component of bones and teeth and thus possesses excellent bioactivity and biocompatibility. MG-63 osteoblast-like cells were cultured on both HA-coated and un-coated poly-Si surfaces for 1, 3, 5 and 7 days and toxicity, proliferation and cell morphology were investigated. The results revealed that the poly-Si layers were bioactive and compatible with the osteoblast-like cells. Nevertheless, the HA coating improved the cell interactions with the poly-Si surfaces based on the cell affinity to the specific chemical composition of the bone-like HA and/or to the higher HA roughness.

On the way to enhance the optical absorption of a-Si in NIR by embedding Mg_2Si thin film

International Nuclear Information System (INIS)

Chernev, I. M.; Shevlyagin, A. V.; Galkin, K. N.; Stuchlik, J.; Remes, Z.; Fajgar, R.; Galkin, N. G.

2016-01-01

Mg_2Si thin film was embedded in amorphous silicon matrix by solid phase epitaxy. The structure and optical properties were investigated by electron energy loss, X-ray photoelectron, Raman, and photo thermal deflection spectroscopy measurements. It was found that in the photon energy range of 0.8–1.7 eV, the light absorption of the structure with magnesium silicide (Mg_2Si) film embedded in a-Si(i) matrix is 1.5 times higher than that for the same structure without Mg_2Si.

Nonlinear silicon photonics

Science.gov (United States)

Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

2017-09-01

Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

Transformational silicon electronics

KAUST Repository

Rojas, Jhonathan Prieto

2014-02-25

In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

Steroid treatment of acute graft-versus-host disease grade I: a randomized trial

OpenAIRE

Bacigalupo, Andrea; Milone, Giuseppe; Cupri, Alessandra; Severino, Antonio; Fagioli, Franca; Berger, Massimo; Santarone, Stella; Chiusolo, Patrizia; Sica, Simona; Mammoliti, Sonia; Sorasio, Roberto; Massi, Daniela; Van Lint, Maria Teresa; Raiola, Anna Maria; Gualandi, Francesca

2017-01-01

Patients with acute graft-versus-host disease (GvHD) grade I were randomized to an observation arm (n=85) or to a treatment arm (n=86) consisting of 6-methylprednisolone 1 mg/kg/day, after stratification for age and donor type. The primary end point was development of grade II–IV GvHD. The cumulative incidence of grade II–IV GvHD was 50% in the observation arm and 33% in the treatment arm (P=0.005). However, grade III–IV GvHD was comparable (13% vs. 10%, respectively; P=0.6), and this was tru...

Silicon Microspheres Photonics

International Nuclear Information System (INIS)

Serpenguzel, A.

2008-01-01

Electrophotonic integrated circuits (EPICs), or alternatively, optoelectronic integrated circuit (OEICs) are the natural evolution of the microelectronic integrated circuit (IC) with the addition of photonic capabilities. Traditionally, the IC industry has been based on group IV silicon, whereas the photonics industry on group III-V semiconductors. However, silicon based photonic microdevices have been making strands in siliconizing photonics. Silicon microspheres with their high quality factor whispering gallery modes (WGMs), are ideal candidates for wavelength division multiplexing (WDM) applications in the standard near-infrared communication bands. In this work, we will discuss the possibility of using silicon microspheres for photonics applications in the near-infrared

Quantitative analysis of complexes in electron irradiated CZ silicon

International Nuclear Information System (INIS)

Inoue, N.; Ohyama, H.; Goto, Y.; Sugiyama, T.

2007-01-01

Complexes in helium or electron irradiated silicon are quantitatively analyzed by highly sensitive and accurate infrared (IR) absorption spectroscopy. Carbon concentration (1x10 15 -1x10 17 cm -3 ) and helium dose (5x10 12 -5x10 13 cm -2 ) or electron dose (1x10 15 -1x10 17 cm -2 ) are changed by two orders of magnitude in relatively low regime compared to the previous works. It is demonstrated that the carbon-related complex in low carbon concentration silicon of commercial grade with low electron dose can be detected clearly. Concentration of these complexes is estimated. It is clarified that the complex configuration and thermal behavior in low carbon and low dose samples is simple and almost confined within the individual complex family compared to those in high concentration and high dose samples. Well-established complex behavior in electron-irradiated sample is compared to that in He-irradiated samples, obtained by deep level transient spectroscopy (DLTS) or cathodoluminescence (CL), which had close relation to the Si power device performance

Exploring the island of inversion with the d({sup 30}Mg,p){sup 31}Mg reaction

Energy Technology Data Exchange (ETDEWEB)

Bildstein, Vinzenz

2010-12-07

In this thesis the results of a d({sup 30}Mg,p){sup 31}Mg experiment at REX-ISOLDE are presented. {sup 31}Mg is located directly on the border of the so-called ''Island of Inversion'', a region of the nuclear chart around {sup 32}Mg where deformed intruder states of the fp shell form the ground states of the nuclei instead of the normal spherical states of the sd shell. A recent experiment has shown the ground state of {sup 31}Mg to be a 1/2{sup +} state and indicates more than 90% intruder configuration. The question whether the low-lying excited states of {sup 31}Mg are deformed intruder states as well or rather spherical states from the sd shell, indicating shape coexistence, is still open. The d({sup 30}Mg,p) {sup 31}Mg reaction is thus a good tool to gain more insight into the nature of the Island of Inversion. In the framework of this thesis the angular distribution of protons was measured for the second excited state at 221 keV in coincidence with de-excitation {gamma}-rays. The angular distribution was compared to DWBA calculations for different transferred orbital momenta, identifying the state for the first time as an l=1 state. The experiment was performed with the new charged particle detector setup T-REX. The setup is optimized for transfer reactions with radioactive beams in inverse kinematics. T-REX was developed, built, installed, and used for this first one neutron transfer experiment in the context of this thesis. The T-REX setup consists of {delta}E-E{sub Rest} telescopes made out of position sensitive silicon detectors that cover almost 4{pi} of the solid angle and can be combined with the MINIBALL {gamma}-ray detector array. It has a large solid angle for the detection and identification of the light recoils from transfer reactions. T-REX allows in combination with the MINIBALL Germanium detector array the tagging of the excited states by their characteristic {gamma}-rays. The combination of T-REX and MINIBALL achieves an

Extraction-spectrophotometric method for silicon determination in high-purity substances. 2. Silicon determination in cadmium

Energy Technology Data Exchange (ETDEWEB)

Yudelevich, I G; Shaburova, V P; Shamrina, L V [AN SSSR, Novosibirsk (USSR). Inst. Neorganicheskoj Khimii

1989-01-01

Cadmium extraction by tributyl phosphate and trialkylbenzylammonium chloride (TABAC) depending on acid (HCl, HI), extracting agent concentration, volume of aqueous and organic phases, number of extraction steps is investigated. On the basis of the obtained results the spectrophotometric method for silicon determination in cadmium and CdCl/sub 2/ using malachite green with preliminary extraction of the base by the TABAC from HCl solutions. The method detection limit is 3.9x10/sup -4/ % Si with respect to initial cadmium sample of 100 mg and 7.8x10/sup -5/ % with respect to 0.5 g of CdCl/sub 2/. The relative standard deviation is S/sub r/-0.07-0.13.

Production of technical silicon and silicon carbide from rice-husk

Directory of Open Access Journals (Sweden)

A. Z. Issagulov

2014-10-01

Full Text Available In the article there are studied physical and chemical properties of silicon-carbonic raw material – rice-husk, thermophysical characteristics of the process of rice-husk pyrolysis in nonreactive and oxidizing environment; structure and phase composition of products of the rice-husk pyrolysis in interval of temperatures 150 – 850 °С and high temperature pyrolysis in interval of temperatures 900 – 1 500 °С. There are defined the silicon-carbon production conditions, which meet the requirements applicable to charging materials at production of technical silicon and silicon carbide.

Photovoltaic characteristics of porous silicon /(n+ - p) silicon solar cells

International Nuclear Information System (INIS)

Dzhafarov, T.D.; Aslanov, S.S.; Ragimov, S.H.; Sadigov, M.S.; Nabiyeva, A.F.; Yuksel, Aydin S.

2012-01-01

Full text : The purpose of this work is to improve the photovoltaic parameters of the screen-printed silicon solar cells by formation the nano-porous silicon film on the frontal surface of the cell. The photovoltaic characteristics of two type silicon solar cells with and without porous silicon layer were measured and compared. A remarkable increment of short-circuit current density and the efficiency by 48 percent and 20 percent, respectively, have been achieved for PS/(n + - pSi) solar cell comparing to (n + - p)Si solar cell without PS layer

TXRF analysis of trace metals in thin silicon nitride films

International Nuclear Information System (INIS)

Vereecke, G.; Arnauts, S.; Verstraeten, K.; Schaekers, M.; Heyrts, M.M.

2000-01-01

As critical dimensions of integrated circuits continue to decrease, high dielectric constant materials such as silicon nitride are being considered to replace silicon dioxide in capacitors and transistors. The achievement of low levels of metal contamination in these layers is critical for high performance and reliability. Existing methods of quantitative analysis of trace metals in silicon nitride require high amounts of sample (from about 0.1 to 1 g, compared to a mass of 0.2 mg for a 2 nm thick film on a 8'' silicon wafer), and involve digestion steps not applicable to films on wafers or non-standard techniques such as neutron activation analysis. A novel approach has recently been developed to analyze trace metals in thin films with analytical techniques currently used in the semiconductor industry. Sample preparation consists of three steps: (1) decomposition of the silicon nitride matrix by moist HF condensed at the wafer surface to form ammonium fluosilicate. (2) vaporization of the fluosilicate by a short heat treatment at 300 o C. (3) collection of contaminants by scanning the wafer surface with a solution droplet (VPD-DSC procedure). The determination of trace metals is performed by drying the droplet on the wafer and by analyzing the residue by TXRF, as it offers the advantages of multi-elemental analysis with no dilution of the sample. The lower limits of detection for metals in 2 nm thick films on 8'' silicon wafers range from about 10 to 200 ng/g. The present study will focus on the matrix effects and the possible loss of analyte associated with the evaporation of the fluosilicate salt, in relation with the accuracy and the reproducibility of the method. The benefits of using an internal standard will be assessed. Results will be presented from both model samples (ammonium fluoride contaminated with metallic salts) and real samples (silicon nitride films from a production tool). (author)

Diatom-induced silicon isotopic fractionation in Antarctic sea ice

Science.gov (United States)

Francois, F.; Damien, C.; Jean-Louis, T.; Anthony, W.; Luc, A.

2006-12-01

We measured silicon-isotopic composition of dissolved silicon and biogenic silica collected by sequential melting from spring 2003 Antarctic pack ice (Australian sector). Sea ice is a key ecosystem in the Southern Ocean and its melting in spring has been often thought to have a seeding effect for the surface waters, triggering blooms in the mixed layer. This work is the first investigation of the silicon isotopes' proxy in sea ice and allows to estimate the activity of sea-ice diatoms in the different brine structures and the influence of sea- ice diatoms on the spring ice edge blooms. The relative use of the dissolved silicon pool by sea-ice diatoms is usually assessed by calculating nutrient:salinity ratios in the brines. However such an approach is biased by difficulties in evaluating the initial nutrient concentrations in the different brines structures, and by the impossibility to account for late sporadic nutrient replenishments. The silicon-isotopic composition of biogenic silica is a convenient alternative since it integrates an average Si utilization on all generations of diatoms. Measurements were performed on a MC-ICP-MS, in dry plasma mode using external Mg doping. Results are expressed as delta29Si relative to the NBS28 standard. From three sea ice cores with contrasted physico-chemical characteristics, we report significant isotopic fractionations linked to the diatoms activity, with distinct silicon biogeochemical dynamics between different brine structure. The diatoms in snow ice and in brine pockets of frazil or congelation ice have the most positive silicon-isotopic composition (+0.53 to +0.86 p.mil), indicating that they grow in a closed system and use a significant part of the small dissolved silicon pool. In the brine channels and skeletal layer, diatoms display a relatively less positive Si-isotopic composition (+0.41 to +0.70 p.mil), although it is still heavier compared to equilibrium fractionation (+0.38 p.mil). This suggests that they have

Performance improvement of silicon solar cells by nanoporous silicon coating

Directory of Open Access Journals (Sweden)

Dzhafarov T. D.

2012-04-01

Full Text Available In the present paper the method is shown to improve the photovoltaic parameters of screen-printed silicon solar cells by nanoporous silicon film formation on the frontal surface of the cell using the electrochemical etching. The possible mechanisms responsible for observed improvement of silicon solar cell performance are discussed.

Reprogramming hMSCs morphology with silicon/porous silicon geometric micro-patterns.

Science.gov (United States)

Ynsa, M D; Dang, Z Y; Manso-Silvan, M; Song, J; Azimi, S; Wu, J F; Liang, H D; Torres-Costa, V; Punzon-Quijorna, E; Breese, M B H; Garcia-Ruiz, J P

2014-04-01

Geometric micro-patterned surfaces of silicon combined with porous silicon (Si/PSi) have been manufactured to study the behaviour of human Mesenchymal Stem Cells (hMSCs). These micro-patterns consist of regular silicon hexagons surrounded by spaced columns of silicon equilateral triangles separated by PSi. The results show that, at an early culture stage, the hMSCs resemble quiescent cells on the central hexagons with centered nuclei and actin/β-catenin and a microtubules network denoting cell adhesion. After 2 days, hMSCs adapted their morphology and cytoskeleton proteins from cell-cell dominant interactions at the center of the hexagonal surface. This was followed by an intermediate zone with some external actin fibres/β-catenin interactions and an outer zone where the dominant interactions are cell-silicon. Cells move into silicon columns to divide, migrate and communicate. Furthermore, results show that Runx2 and vitamin D receptors, both specific transcription factors for skeleton-derived cells, are expressed in cells grown on micropatterned silicon under all observed circumstances. On the other hand, non-phenotypic alterations are under cell growth and migration on Si/PSi substrates. The former consideration strongly supports the use of micro-patterned silicon surfaces to address pending questions about the mechanisms of human bone biogenesis/pathogenesis and the study of bone scaffolds.

Use of porous MgO in pyrochemical applications

International Nuclear Information System (INIS)

Maiya, P.S.; Sweeney, S.M.; Carroll, L.A.; Dusek, J.T.

1994-11-01

Pyrochemical methods for the extraction of transuranic elements from light water reactor spent fuel require a reduction step in which the oxide fuel is reduced to metals by Li in molten LiCl. The Li 2 O formed is electrolytically reduced to metal in a cell that uses a carbon (or inert) anode and a Li cathode to recycle the salt and minimize the waste. Use of a carbon anode causes carbon dust that interferes with the process. Moreover, current efficiency is reduced as a result of oxidation of Li to Li 2 O by CO 2 . A porous MgO shroud around the anode was found to obviate these problems. Porous MgO crucibles and rectangular bar specimens were fabricated from MgO powders (electrically fused MgO, reagent grade MgO were mixed in appropriate combinations with a binder and lubricant). Particle size, force applied to the powders during cold pressing, and sintering temperature were varied to achieve a total porosity of >45% (mostly open porosity) and to control pore size and pore distribution. Mercury intrusion porosimetry was used to determine the pore size and pore size distribution. Flexural strength is observed to be proportional to the square root of pore size, which is consistent with fracture mechanics

Study on structural properties of epitaxial silicon films on annealed double layer porous silicon

International Nuclear Information System (INIS)

Yue Zhihao; Shen Honglie; Cai Hong; Lv Hongjie; Liu Bin

2012-01-01

In this paper, epitaxial silicon films were grown on annealed double layer porous silicon by LPCVD. The evolvement of the double layer porous silicon before and after thermal annealing was investigated by scanning electron microscope. X-ray diffraction and Raman spectroscopy were used to investigate the structural properties of the epitaxial silicon thin films grown at different temperature and different pressure. The results show that the surface of the low-porosity layer becomes smooth and there are just few silicon-bridges connecting the porous layer and the substrate wafer. The qualities of the epitaxial silicon thin films become better along with increasing deposition temperature. All of the Raman peaks of silicon films with different deposition pressure are situated at 521 cm -1 under the deposition temperature of 1100 °C, and the Raman intensity of the silicon film deposited at 100 Pa is much closer to that of the monocrystalline silicon wafer. The epitaxial silicon films are all (4 0 0)-oriented and (4 0 0) peak of silicon film deposited at 100 Pa is more symmetric.

Effects of DC bias on magnetic performance of high grades grain-oriented silicon steels

Energy Technology Data Exchange (ETDEWEB)

Ma, Guang; Cheng, Ling [Global Energy Interconnection Research Institute, State Key Laboratory of Advanced Transmission Technology,Beijing 102211 (China); Lu, Licheng [State Grid Corporation of China, Beijing 100031 (China); Yang, Fuyao; Chen, Xin [Global Energy Interconnection Research Institute, State Key Laboratory of Advanced Transmission Technology,Beijing 102211 (China); Zhu, Chengzhi [State Grid Zhejiang Electric Power Company, Hangzhou 310007 (China)

2017-03-15

When high voltage direct current (HVDC) transmission adopting mono-polar ground return operation mode or unbalanced bipolar operation mode, the invasion of DC current into neutral point of alternating current (AC) transformer will cause core saturation, temperature increasing, and vibration acceleration. Based on the MPG-200D soft magnetic measurement system, the influence of DC bias on magnetic performance of 0.23 mm and 0.27 mm series (P{sub 1.7}=0.70–1.05 W/kg, B{sub 8}>1.89 T) grain-oriented (GO) silicon steels under condition of AC / DC hybrid excitation were systematically realized in this paper. For the high magnetic induction GO steels (core losses are the same), greater thickness can lead to stronger ability of resisting DC bias, and the reasons for it were analyzed. Finally, the magnetostriction and A-weighted magnetostriction velocity level of GO steel under DC biased magnetization were researched. - Highlights: • Magnetic properties of 0.23 mm and 0.27 mm series (P{sub 1.7}=0.70–1.05 W/kg, B{sub 8}>1.89 T) grain-oriented (GO) silicon steels under condition of AC / DC hybrid excitation were systematically analyzed. • Influence of DC biased magnetization on core loss, magnetostriction, and A-weighted magnetostriction velocity level of GO steel were researched. • Greater thickness and relatively lower magnetic induction (B{sub 8}>1.89 T yet) of GO steel can lead to stronger ability of resisting DC bias, and the reasons for it were analyzed.

Magnesium Oxide (MgO) pH-sensitive Sensing Membrane in Electrolyte-Insulator-Semiconductor Structures with CF4 Plasma Treatment.

Science.gov (United States)

Kao, Chyuan-Haur; Chang, Chia Lung; Su, Wei Ming; Chen, Yu Tzu; Lu, Chien Cheng; Lee, Yu Shan; Hong, Chen Hao; Lin, Chan-Yu; Chen, Hsiang

2017-08-03

Magnesium oxide (MgO) sensing membranes in pH-sensitive electrolyte-insulator-semiconductor structures were fabricated on silicon substrate. To optimize the sensing capability of the membrane, CF 4 plasma was incorporated to improve the material quality of MgO films. Multiple material analyses including FESEM, XRD, AFM, and SIMS indicate that plasma treatment might enhance the crystallization and increase the grain size. Therefore, the sensing behaviors in terms of sensitivity, linearity, hysteresis effects, and drift rates might be improved. MgO-based EIS membranes with CF 4 plasma treatment show promise for future industrial biosensing applications.

Impurity segregation behavior in polycrystalline silicon ingot grown with variation of electron-beam power

Science.gov (United States)

Lee, Jun-Kyu; Lee, Jin-Seok; Jang, Bo-Yun; Kim, Joon-Soo; Ahn, Young-Soo; Cho, Churl-Hee

2014-08-01

Electron beam melting (EBM) systems have been used to improve the purity of metallurgical grade silicon feedstock for photovoltaic application. Our advanced EBM system is able to effectively remove volatile impurities using a heat source with high energy from an electron gun and to continuously allow impurities to segregate at the top of an ingot solidified in a directional solidification (DS) zone in a vacuum chamber. Heat in the silicon melt should move toward the ingot bottom for the desired DS. However, heat flux though the ingot is changed as the ingot becomes longer due to low thermal conductivity of silicon. This causes a non-uniform microstructure of the ingot, finally leading to impurity segregation at its middle. In this research, EB power irradiated on the silicon melt was controlled during the ingot growth in order to suppress the change of heat flux. EB power was reduced from 12 to 6.6 kW during the growth period of 45 min with a drop rate of 0.125 kW/min. Also, the silicon ingot was grown under a constant EB power of 12 kW to estimate the effect of the drop rate of EB power. When the EB power was reduced, the grains with columnar shape were much larger at the middle of the ingot compared to the case of constant EB power. Also, the present research reports a possible reason for the improvement of ingot purity by considering heat flux behaviors.

Fabrication of silicon solar cell with >18% efficiency using spin-on-film processing for phosphorus diffusion and SiO{sub 2}/graded index TiO{sub 2} anti-reflective coating

Energy Technology Data Exchange (ETDEWEB)

Lee, Yi-Yu; Ho, Wen-Jeng, E-mail: wjho@ntut.edu.tw; Yeh, Chien-Wu

2015-11-01

Highlights: • Employed SOF technology for both phosphorus diffusion and multi-layer ARCs. • Optical properties of TiO{sub 2}, SiO{sub 2}, and SiO{sub 2}/TiO{sub 2}/TiO{sub 2} films are characterized. • Photovoltaic performances of the fabricated solar cells are measured and compared. • An impressive efficiency of 18.25% was obtained by using the SOF processes. - Abstract: This study employed spin-on film (SOF) technology for the fabrication of phosphorus diffusion and multi-layer anti-reflective coatings (ARCs) with a graded index on silicon (Si) wafers. Low cost and high efficiency solar cells are important issues for the operating cost of a photovoltaic system. SOF technology for the fabrication of solar cells can be for the achievement of this goal. This study succeeded in the application of SOF technology in the preparation of both phosphorus diffusion and SiO{sub 2}/graded index TiO{sub 2} ARCs for Si solar cells. Optical properties of TiO{sub 2}, SiO{sub 2}, and multi-layer SiO{sub 2}/TiO{sub 2} deposition by SOF are characterized. Electrical and optical characteristics of the fabricated solar cells are measured and compared. An impressive efficiency of 18.25% was obtained by using the SOF processes.

Regenerable, innovative porous silicon-based polymer-derived ceramics for removal of methylene blue and rhodamine B from textile and environmental waters.

Science.gov (United States)

Bruzzoniti, Maria Concetta; Appendini, Marta; Onida, Barbara; Castiglioni, Michele; Del Bubba, Massimo; Vanzetti, Lia; Jana, Prasanta; Sorarù, Gian Domenico; Rivoira, Luca

2018-04-01

The presence of residual color in treated textile wastewater above the regulation limits is still a critical issue in many textile districts. Innovative, polymer-derived ceramics of the Si-C-O system were here synthesized in order to obtain porous nanocomposite materials where a free carbon phase is dispersed into a silicon carbide/silicon oxycarbide network. The sorbents were comprehensively characterized for the removal of two model water-soluble dyes (i.e., the cation methylene blue and the zwitterion rhodamine B). Adsorption is very rapid and controlled by intra-particle and/or film diffusion, depending on dye concentration. Among the nanocomposites studied, the SiOC aerogel (total capacity about 45 mg/g, is easily regenerated under mild treatment (250 °C, 2 h). Adsorption of dyes is not affected by the matrix composition: removals of 150 mg/L methylene blue from river water and simulated textile wastewater with high content of metal ions (2-50 mg/L) and chemical oxygen demand (800 mg/L) were higher than 92% and quantitative for a dye concentration of 1 mg/L.

TEM microstructural characterization of melt-spun aged Al-6Si-3Cu-xMg alloys

International Nuclear Information System (INIS)

Lopez, Ismeli Alfonso; Zepeda, Cuauhtemoc Maldonado; Gonzalez Reyes, Jose Gonzalo; Flores, Ariosto Medina; Rodriguez, Juan Serrato; Gomez, Luis Bejar

2007-01-01

Three Al-6Si-3Cu-xMg alloys (x = 0.59, 3.80 and 6.78 wt.%) were produced using melt-spinning. As-melt-spun ribbons were aged at 150, 180 and 210 deg. C for times between 0.05 and 100 h. Microstructural changes were examined using transmission electron microscopy (TEM) and microhardness was measured. TEM analysis of the as-melt-spun alloys revealed 5 nm nanoparticles and larger particles (50 nm) composed of Al 2 Cu (θ) for the 0.59% Mg alloy and Al 5 Cu 2 Mg 8 Si 6 (Q) for 3.80% and 6.78% Mg alloys. Silicon solid solubility was extended to 9.0 at.% and Mg in solid solution reached 6.7 at.%. After aging treatments the 6.78% Mg alloy exhibited the most significant increase in microhardness, reaching 260 kg/mm 2 . TEM analysis of aged specimens also showed θ and Q phase (5-20 nm nanoparticles and 35-40 nm particles). The combination of the volume fraction and size of the particles plays an important role in microhardness variation

Light emitting structures porous silicon-silicon substrate

International Nuclear Information System (INIS)

Monastyrskii, L.S.; Olenych, I.B.; Panasjuk, M.R.; Savchyn, V.P.

1999-01-01

The research of spectroscopic properties of porous silicon has been done. Complex of photoluminescence, electroluminescence, cathodoluminescence, thermostimulated depolarisation current analyte methods have been applied to study of geterostructures and free layers of porous silicon. Light emitting processes had tendency to decrease. The character of decay for all kinds of luminescence were different

Investigation of blue luminescence in Mg doped AlN films

Energy Technology Data Exchange (ETDEWEB)

Sun, Xiliang; Xiong, Juan, E-mail: xiongjuana@163.com; Zhang, Weihai; Liu, Lei; Gu, Haoshuang, E-mail: guhsh@hubu.edu.cn

2015-02-05

Highlights: • AlN films doped with 0.8–4.4 at.% Mg were deposited by magnetron sputtering. • Structural and photoluminescence properties of Mg-doped AlN films were synthesized in detailed. • A broad blue band centered at 420 nm and 440 nm was observed in Mg-doped AlN films. • An enhancement of A1 (TO) mod and a slightly blue-shift of E2 (high) mode were observed. - Abstract: The Al{sub 1−x}Mg{sub x}N thin films were deposited on (1 0 0) silicon substrates by magnetron sputtering. The structural and photoluminescence properties of the films with varying Mg concentrations were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Raman spectra and photoluminescence (PL), respectively. The results clearly showed that the Mg atoms successfully incorporated into AlN, while the crystal structure of the films was maintained. The Raman spectra of Al{sub 1−x}Mg{sub x}N films reveals the enhancement of A{sub 1} (TO) mode, a slightly blue-shift and an augment in FWHM for E{sub 2} (high) phonon mode with increasing Mg content, which can be associated with the deterioration of (0 0 2) orientation and the appearance of (1 0 0) orientation. A broad blue band centered at 420 nm and 440 nm was observed in Mg-doped AlN films. It was suggested that the transitions from the shallow donor level not only to the ground state but also to the excited states of the deep level was responsible for the broad blue emission band. This work indicates the AlN film for the application in lighting emission devices.

Gelcasting of SiC/Si for preparation of silicon nitride bonded silicon carbide

International Nuclear Information System (INIS)

Xie, Z.P.; Tsinghua University, Beijing,; Cheng, Y.B.; Lu, J.W.; Huang, Y.

2000-01-01

In the present paper, gelcasting of aqueous slurry with coarse silicon carbide(1mm) and fine silicon particles was investigated to fabricate silicon nitride bonded silicon carbide materials. Through the examination of influence of different polyelectrolytes on the Zeta potential and viscosity of silicon and silicon carbide suspensions, a stable SiC/Si suspension with 60 vol% solid loading could be prepared by using polyelectrolyte of D3005 and sodium alginate. Gelation of this suspension can complete in 10-30 min at 60-80 deg C after cast into mold. After demolded, the wet green body can be dried directly in furnace and the green strength will develop during drying. Complex shape parts with near net size were prepared by the process. Effects of the debindering process on nitridation and density of silicon nitride bonded silicon carbide were also examined. Copyright (2000) The Australian Ceramic Society

Multifunctional Graphene-Silicone Elastomer Nanocomposite, Method of Making the Same, and Uses Thereof

Science.gov (United States)

Pan, Shuyang (Inventor); Aksay, Ilhan A. (Inventor); Prud'Homme, Robert K. (Inventor)

2018-01-01

A nanocomposite composition having a silicone elastomer matrix having therein a filler loading of greater than 0.05 wt %, based on total nanocomposite weight, wherein the filler is functional graphene sheets (FGS) having a surface area of from 300 sq m/g to 2630 sq m2/g; and a method for producing the nanocomposite and uses thereof.

Silicon detectors

International Nuclear Information System (INIS)

Klanner, R.

1984-08-01

The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

FTIR studies of swift silicon and oxygen ion irradiated porous silicon

International Nuclear Information System (INIS)

Bhave, Tejashree M.; Hullavarad, S.S.; Bhoraskar, S.V.; Hegde, S.G.; Kanjilal, D.

1999-01-01

Fourier Transform Infrared Spectroscopy has been used to study the bond restructuring in silicon and oxygen irradiated porous silicon. Boron doped p-type (1 1 1) porous silicon was irradiated with 10 MeV silicon and a 14 MeV oxygen ions at different doses ranging between 10 12 and 10 14 ions cm -2 . The yield of PL in porous silicon irradiated samples was observed to increase considerably while in oxygen irradiated samples it was seen to improve only by a small extent for lower doses whereas it decreased for higher doses. The results were interpreted in view of the relative intensities of the absorption peaks associated with O-Si-H and Si-H stretch bonds

Fabrication and optical characterization of light trapping silicon nanopore and nanoscrew devices

International Nuclear Information System (INIS)

Jin, Hyunjong; Logan Liu, G

2012-01-01

We have fabricated nanotextured Si substrates that exhibit controllable optical reflection intensities and colors. Si nanopore has a photon trapping nanostructure but has abrupt changes in the index of refraction displaying a darkened specular reflection. Nanoscrew Si shows graded refractive-index photon trapping structures that enable diffuse reflection to be as low as 2.2% over the visible wavelengths. By tuning the 3D nanoscale silicon structure, the optical reflection peak wavelength and intensity are changed in the wavelength range of 300–800 nm, making the surface have different reflectivity and apparent colors. The relation between the surface optical properties with the spatial features of the photon trapping nanostructures is examined. Integration of photon trapping structures with planar Si structure on the same substrate is also demonstrated. The tunable photon trapping silicon structures have potential applications in enhancing the performance of semiconductor photoelectric devices. (paper)

On the way to enhance the optical absorption of a-Si in NIR by embedding Mg{sub 2}Si thin film

Energy Technology Data Exchange (ETDEWEB)

Chernev, I. M., E-mail: igor-chernev7@mail.ru; Shevlyagin, A. V.; Galkin, K. N. [Institute of Automation and Control Processes of FEB RAS, Radio St. 5, 690041 Vladivostok (Russian Federation); Stuchlik, J. [Institute of Physics of the ASCR, v. v. i., Cukrovarnická 10/112, 162 00 Praha 6 (Czech Republic); Remes, Z. [Institute of Physics of the ASCR, v. v. i., Cukrovarnická 10/112, 162 00 Praha 6 (Czech Republic); FBE CTU, Nam. Sitna 3105, 272 01 Kladno (Czech Republic); Fajgar, R. [Institute of Chemical Process Fundamentals of the ASCR, v. v. i., Rozvojová 135, 165 02 Praha 6 (Czech Republic); Galkin, N. G. [Institute of Automation and Control Processes of FEB RAS, Radio St. 5, 690041 Vladivostok (Russian Federation); Far Eastern Federal University, School of Natural Sciences, Sukhanova St. 8, 690950 Vladivostok (Russian Federation)

2016-07-25

Mg{sub 2}Si thin film was embedded in amorphous silicon matrix by solid phase epitaxy. The structure and optical properties were investigated by electron energy loss, X-ray photoelectron, Raman, and photo thermal deflection spectroscopy measurements. It was found that in the photon energy range of 0.8–1.7 eV, the light absorption of the structure with magnesium silicide (Mg{sub 2}Si) film embedded in a-Si(i) matrix is 1.5 times higher than that for the same structure without Mg{sub 2}Si.

Annealing temperature dependence of photoluminescent characteristics of silicon nanocrystals embedded in silicon-rich silicon nitride films grown by PECVD

International Nuclear Information System (INIS)

Chao, D.S.; Liang, J.H.

2013-01-01

Recently, light emission from silicon nanostructures has gained great interest due to its promising potential of realizing silicon-based optoelectronic applications. In this study, luminescent silicon nanocrystals (Si–NCs) were in situ synthesized in silicon-rich silicon nitride (SRSN) films grown by plasma-enhanced chemical vapor deposition (PECVD). SRSN films with various excess silicon contents were deposited by adjusting SiH 4 flow rate to 100 and 200 sccm and keeping NH 3 one at 40 sccm, and followed by furnace annealing (FA) treatments at 600, 850 and 1100 °C for 1 h. The effects of excess silicon content and post-annealing temperature on optical properties of Si–NCs were investigated by photoluminescence (PL) and Fourier transform infrared spectroscopy (FTIR). The origins of two groups of PL peaks found in this study can be attributed to defect-related interface states and quantum confinement effects (QCE). Defect-related interface states lead to the photon energy levels almost kept constant at about 3.4 eV, while QCE results in visible and tunable PL emission in the spectral range of yellow and blue light which depends on excess silicon content and post-annealing temperature. In addition, PL intensity was also demonstrated to be highly correlative to the excess silicon content and post-annealing temperature due to its corresponding effects on size, density, crystallinity, and surface passivation of Si–NCs. Considering the trade-off between surface passivation and structural properties of Si–NCs, an optimal post-annealing temperature of 600 °C was suggested to maximize the PL intensity of the SRSN films

Antibody-guided three-step therapy for high grade glioma with yttrium-90 biotin

International Nuclear Information System (INIS)

Paganelli, G.; Grana, C.; Chinol, M.; Cremonesi, M.; De Cicco, C.; Zoboli, S.; De Braud, F.; Robertson, C.; Zurrida, S.; Veronesi, U.; Casadio, C.; Siccardi, A.G.

1999-01-01

While the incidence of brain tumours seems to be increasing, median survival in patients with glioblastoma remains less than 1 year, despite improved diagnostic imaging and neurosurgical techniques, and innovations in treatment. We have developed an avidin-biotin pre-targeting approach for delivering therapeutic radionuclides to gliomas, using anti-tenascin monoclonal antibodies, which seems potentially effective for treating these tumours. We treated 48 eligible patients with histologically confirmed grade III or IV glioma and documented residual disease or recurrence after conventional treatment. Three-step radionuclide therapy was performed by intravenous administration of 35 mg/m 2 of biotinylated anti-tenascin monoclonal antibody (1st step), followed 36 h later by 30 mg of avidin and 50 mg of streptavidin (2nd step), and 18-24 h later by 1-2 mg of yttrium-90-labelled biotin (3rd step). 90 Y doses of 2.22-2.96 GBq/m 2 were administered; maximum tolerated dose (MTD) was determined at 2.96 GBq/m 2 . Tumour mass reduction (>25%-100%), documented by computed tomography or magnetic resonance imaging, occurred in 12/48 patients (25%), with 8/48 having a duration of response of at least 12 months. At present, 12 patients are still in remission, comprising four with a complete response, two with a parital response, two with a minor response and four with stable disease. Median survival from 90 Y treatment is 11 months for grade IV glioblastoma and 19 months for grade III anaplastic gliomas. Avidin-biotin based three-step radionuclide therapy is well tolerated at the dose of 2.2 GBq/m 2 , allowing the injection of 90 Y-biotin without bone marrow transplantation. This new approach interferes with the progression of high-grade glioma and may produce tumour regression in patients no longer responsive to other therapies. (orig.)

Performance of multilayer coated silicon pore optics

Science.gov (United States)

Ackermann, M. D.; Collon, M. J.; Jensen, C. P.; Christensen, F. E.; Krumrey, M.; Cibik, L.; Marggraf, S.; Bavdaz, M.; Lumb, D.; Shortt, B.

2010-07-01

The requirements for the IXO (International X-ray Observatory) telescope are very challenging in respect of angular resolution and effective area. Within a clear aperture with 1.7 m > R > 0.25 m that is dictated by the spacecraft envelope, the optics technology must be developed to satisfy simultaneously requirements for effective area of 2.5 m2 at 1.25 keV, 0.65 m2 at 6 keV and 150 cm2 at 30 keV. The reflectivity of the bare mirror substrate materials does not allow these requirements to be met. As such the IXO baseline design contains a coating layout that varies as a function of mirror radius and in accordance with the variation in grazing incidence angle. The higher energy photon response is enhanced through the use of depth-graded multilayer coatings on the inner radii mirror modules. In this paper we report on the first reflectivity measurements of wedged ribbed silicon pore optics mirror plates coated with a depth graded W/Si multilayer. The measurements demonstrate that the deposition and performance of the multilayer coatings is compatible with the SPO production process.

Strategies for doped nanocrystalline silicon integration in silicon heterojunction solar cells

Czech Academy of Sciences Publication Activity Database

Seif, J.; Descoeudres, A.; Nogay, G.; Hänni, S.; de Nicolas, S.M.; Holm, N.; Geissbühler, J.; Hessler-Wyser, A.; Duchamp, M.; Dunin-Borkowski, R.E.; Ledinský, Martin; De Wolf, S.; Ballif, C.

2016-01-01

Roč. 6, č. 5 (2016), s. 1132-1140 ISSN 2156-3381 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : microcrystalline silicon * nanocrystalline silicon * silicon heterojunctions (SHJs) * solar cells Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.712, year: 2016

Microstructure and wear behavior of friction stir processed cast hypereutectic aluminum silicon

Directory of Open Access Journals (Sweden)

Ahmad Rosli

2017-01-01

Full Text Available Hypereutectic as-cast Al-18Si-Cu-Ni alloy was subjected to friction stir processing (FSP. The resultant effect of FSP on the alloy was evaluated by microstructure analysis and wear tests (dry sliding. A significant microstructural modification and enhancement in wear behavior of Al-18Si-Cu-Ni alloy was recorded after friction stir processing. Wear resistance improvement was related to considerable modification in size, morphology and distribution of silicon particles, and hardness improvement. It was found that lower tool rotation speed was more effective to refine silicon particles and in turn increase wear resistance. Minimum Si particle mean area of about 47.8 µm2, and wear rate of 0.0155 mg/m was achieved.

Periodically poled silicon

Science.gov (United States)

Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

2010-02-01

Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

Paclitaxel poliglumex, temozolomide, and radiation for newly diagnosed high-grade glioma: a Brown University Oncology Group Study.

Science.gov (United States)

Jeyapalan, Suriya; Boxerman, Jerrold; Donahue, John; Goldman, Marc; Kinsella, Timothy; Dipetrillo, Thomas; Evans, Devon; Elinzano, Heinrich; Constantinou, Maria; Stopa, Edward; Puthawala, Yakub; Cielo, Deus; Santaniello, Alyson; Oyelese, Adetokunbo; Mantripragada, Kalyan; Rosati, Kayla; Isdale, Debora; Safran, Howard

2014-10-01

Paclitaxel poliglumex (PPX), a drug conjugate that links paclitaxel to poly-L-glutamic acid, is a potent radiation sensitizer. Prior studies in esophageal cancer have demonstrated that PPX (50 mg/m/wk) can be administered with concurrent radiation with acceptable toxicity. The primary objective of this study was to determine the safety of the combination of PPX with temozolomide and concurrent radiation for high-grade gliomas. Eligible patients were required to have WHO grade 3 or 4 gliomas. Patients received weekly PPX (50 mg/m/wk) combined with standard daily temozolomide (75 mg/m) for 6 weeks with concomitant radiation (2.0 Gy, 5 d/wk for a total dose of 60 Gy). Twenty-five patients were enrolled, 17 with glioblastoma and 8 with grade 3 gliomas. Seven of 25 patients had grade 4 myelosuppression. Hematologic toxicity lasted up to 5 months suggesting a drug interaction between PPX and temozolomide. For patients with glioblastoma, the median progression-free survival was 11.5 months and the median overall survival was 18 months. PPX could not be safely combined with temozolomide due to grade 4 hematologic toxicity. However, the favorable progression-free and overall survival suggest that PPX may enhance radiation for glioblastoma. A randomized study of single agent PPX/radiation versus temozolomide/radiation for glioblastoma without MGMT methylation is underway.

Efficiency Enhancement of Silicon Solar Cells by Porous Silicon Technology

Directory of Open Access Journals (Sweden)

Eugenijus SHATKOVSKIS

2012-09-01

Full Text Available Silicon solar cells produced by a usual technology in p-type, crystalline silicon wafer were investigated. The manufactured solar cells were of total thickness 450 mm, the junction depth was of 0.5 mm – 0.7 mm. Porous silicon technologies were adapted to enhance cell efficiency. The production of porous silicon layer was carried out in HF: ethanol = 1 : 2 volume ratio electrolytes, illuminating by 50 W halogen lamps at the time of processing. The etching current was computer-controlled in the limits of (6 ÷ 14 mA/cm2, etching time was set in the interval of (10 ÷ 20 s. The characteristics and performance of the solar cells samples was carried out illuminating by Xenon 5000 K lamp light. Current-voltage characteristic studies have shown that porous silicon structures produced affect the extent of dark and lighting parameters of the samples. Exactly it affects current-voltage characteristic and serial resistance of the cells. It has shown, the formation of porous silicon structure causes an increase in the electric power created of solar cell. Conversion efficiency increases also respectively to the initial efficiency of cell. Increase of solar cell maximum power in 15 or even more percent is found. The highest increase in power have been observed in the spectral range of Dl @ (450 ÷ 850 nm, where ~ 60 % of the A1.5 spectra solar energy is located. It has been demonstrated that porous silicon technology is effective tool to improve the silicon solar cells performance.DOI: http://dx.doi.org/10.5755/j01.ms.18.3.2428

Chiral silicon nanostructures

International Nuclear Information System (INIS)

Schubert, E.; Fahlteich, J.; Hoeche, Th.; Wagner, G.; Rauschenbach, B.

2006-01-01

Glancing angle ion beam assisted deposition is used for the growth of amorphous silicon nanospirals onto [0 0 1] silicon substrates in a temperature range from room temperature to 475 deg. C. The nanostructures are post-growth annealed in an argon atmosphere at various temperatures ranging from 400 deg. C to 800 deg. C. Recrystallization of silicon within the persisting nanospiral configuration is demonstrated for annealing temperatures above 800 deg. C. Transmission electron microscopy and Raman spectroscopy are used to characterize the silicon samples prior and after temperature treatment

Placement of tracheobronchial silicone Y-stents: Multicenter experience and systematic review of the literature

Directory of Open Access Journals (Sweden)

Inderpaul Singh Sehgal

2017-01-01

Full Text Available Background: Airway obstruction or tracheoesophageal fistula (TEF near the tracheal carina requires placement of Y-shaped stents. Herein, we describe our multicenter experience with the placement of Dumon silicone Y-stents. We also conduct a systematic review for studies describing the deployment of airway silicone Y-stents. Methods: This was a retrospective analysis of consecutive subjects who underwent placement of silicone Y-stents. The clinical details including the underlying diagnosis, indication for the placement of silicone Y-stents, success of stent placement, and follow-up are presented. The PubMed and EMBASE databases were also reviewed for studies describing the placement of silicone Y-stents. Results: During the study, 27 silicone Y-stents were placed. The mean (standard deviation age of the study population (85.2% males was 57.7 (13.5 years. The stents were placed for airway obstruction in 77.8% and TEF in 29.6% of the patients. The most common underlying disease was carcinoma of the esophagus. The degree of airway obstruction was grade 3–4 in 18 subjects, and respiratory failure was encountered in 18 subjects. The stent was deployed successfully in all the subjects. No deaths were encountered during stent placement. Most subjects had rapid relief of symptoms following the procedure. Excessive secretions and mucostasis were the most common stent-related complications followed by the development of granulation tissue. The systematic review yielded nine studies (338 subjects with airway obstruction and/or TEF. The most common indication for silicone Y-stent placement was tracheobronchial obstruction and TEF due to malignancy. Benign disorders that necessitated stent placement included postintubation tracheal stenosis, airway malacia, and others. The stent was successfully placed in 98% with only one periprocedural death. Granulation tissue formation and mucostasis were the most common stent-related complications. Conclusion

Enhancement of struvite pellets crystallization in a full-scale plant using an industrial grade magnesium product.

Science.gov (United States)

Crutchik, D; Morales, N; Vázquez-Padín, J R; Garrido, J M

2017-02-01

A full-scale struvite crystallization system was operated for the treatment of the centrate obtained from the sludge anaerobic digester in a municipal wastewater treatment plant. Additionally, the feasibility of an industrial grade Mg(OH) 2 as a cheap magnesium and alkali source was also investigated. The struvite crystallization plant was operated for two different periods: period I, in which an influent with low phosphate concentration (34.0 mg P·L -1 ) was fed to the crystallization plant; and period II, in which an influent with higher phosphate concentration (68.0 mg P·L -1 ) was used. A high efficiency of phosphorus recovery by struvite crystallization was obtained, even when the effluent treated had a high level of alkalinity. Phosphorus recovery percentage was around 77%, with a phosphate concentration in the effluent between 10.0 and 30.0 mg P·L -1 . The experiments gained struvite pellets of 0.5-5.0 mm size. Moreover, the consumption of Mg(OH) 2 was estimated at 1.5 mol Mg added·mol P recovered -1 . Thus, industrial grade Mg(OH) 2 can be an economical alternative as magnesium and alkali sources for struvite crystallization at industrial scale.

Responses to graded phytic acid in young Japanese quail

International Nuclear Information System (INIS)

Fox, M.R.S.; Tao, S.H.; Fry, B.E. Jr.; Phillippy, B.Q.; Lee, Y.H.; Johnston, M.R.

1986-01-01

Graded levels of phytic acid (PA) were fed to day-old Japanese quail (Coturnix coturnix japonica) for 7 d to establish responses for evaluating effects of inositol tri-, tetra-, and pentaphosphates. Sodium phytate was added to supply 1.4, 2.8, 5.5, 8.4, 11.0, and 13.8 g PA/kg adequate casein-gelatin diet containing 20 mg Zn/kg. Eleven g phytic acid approximates that in diets containing defatted soy flour as the protein source. PA:Zn molar ratios were 7, 14, 27, 41, 54, and 68. The effects and graded response ranges (g PA/kg diet) were as follows: decreased body weight, 2.8-13.8; defective feathering, 1.4-5.5; decreased tibia Zn, 1.4-5.5; decreased tibia ash, 1.4-13.8; and decreased pancreas Zn, 1.4-5.5. The lowest level of PA produced marked decreases in tibia and pancreas Zn; thus the PA ranges can be extended to even lower levels. The effects of PA were reproducible between experiments and the mean values were reproducible except for tibia ash and liver Mn, which varied somewhat. There were no effects of PA on liver Zn and Mg, or on pancreas Fe and Mg; the effects on liver Fe and Cu, and tibia Fe and Mg were small and inconsistent. The responses to PA and the dose ranges provide a realistic basis for assessing the biological effects of other inositol phosphates that can be formed during food processing

The chemistry of silicon

CERN Document Server

Rochow, E G; Emeléus, H J; Nyholm, Ronald

1975-01-01

Pergamon Texts in Organic Chemistry, Volume 9: The Chemistry of Silicon presents information essential in understanding the chemical properties of silicon. The book first covers the fundamental aspects of silicon, such as its nuclear, physical, and chemical properties. The text also details the history of silicon, its occurrence and distribution, and applications. Next, the selection enumerates the compounds and complexes of silicon, along with organosilicon compounds. The text will be of great interest to chemists and chemical engineers. Other researchers working on research study involving s

Synthesis of high surface area spinel-type MgAl2O4 nanoparticles by

Indian Academy of Sciences (India)

68

Spinel-type magnesium aluminate, MgAl2O4, is an effective refractory ceramic for ... such as good mechanical strength at high temperatures, high resistance to ... Materials. The starting chemicals with laboratory grade purity were provided ...

The effect of carbon mole ratio on the fabrication of silicon carbide

Directory of Open Access Journals (Sweden)

Sutham Niyomwas

2008-03-01

Full Text Available Silicon Carbide (SiC particles were synthesized by self-propagating high temperature synthesis (SHS from a powder mixture of SiO2-C-Mg. The reaction was carried out in a SHS reactor under static argon gas at a pressure of 0.5 MPa. The standard Gibbs energy minimization method was used to calculate the equilibrium composition of the reacting species. The effects of carbon mole ratio on the precursor mixture (C/SiO2/Mg: 1/1/2 to 3/1/2 and on the SiC conversion were investigated using X-ray diffraction and scanning electron microscope technique. The as-synthesized products of SiC-MgO powders were leached with 0.1M HCl acid solution to obtain the SiC particles.

Safety and efficacy of fimasartan in Mexican patients with grade 1-2 essential hypertension.

Science.gov (United States)

Cardona-Muñoz, Ernesto G; López-Alvarado, Agustín; Conde-Carmona, Ignacio; Sánchez-Mejorada, Gerardo; Pascoe-González, Sara; Banda-Elizondo, Ramiro G; García-Castillo, Armando; González-Gálvez, Guillermo; Velasco-Sánchez, Raúl G; Vidrio-Velázquez, Maricela; Leiva-Pons, José L; Villeda-Espinosa, Efraín; Guerra-López, Arturo; Esturau-Santalo, Ramón M

To evaluate efficacy and safety of 60mg and 120mg Fimasartan (FMS) alone or combined with 12.5mg hydrochlorothiazide (HCTZ) in a Mexican population. A six month, treat-to-target, open study was conducted on subjects with grade 1-2 hypertension. The subjects were initially treated with 60mg FMS once daily. In week 8, those with Diastolic Blood Pressure (DBP) <90mmHg continued on the same FMS dose during the rest of the study, while those with DBP ≥90mmHg were randomised to either 120mg FMS or 60mg FMS + 12.5mg HCTZ once daily. In week 12, randomised subjects with DBP ≥90mmHg received 120mg FMS+12.5mg HCTZ, while those achieving target continued with their assigned treatment until the end of the study. FMS 60mg (n=272) decreased both DBP and Systolic Blood Pressure (SBP) by 11.3±8.9 (p<.0001) and 16.0±14.1 (p<.0001)mmHg, respectively, with 75.4% of subjects reaching the treatment target. Subjects assigned to FMS 120mg, FMS 60mg+HCTZ 12.5mg, or FMS 120mg+HCTZ 12.5mg once daily, showed significant reductions in DBP and SBP with their assigned treatment. At the end of the study, 237/272 subjects (87.1%) achieved a DBP<90mmHg and an SBP<140mmHg. The most frequently reported adverse reactions included headache (3.7%), dry mouth (1.1%), transient liver enzyme increase (1.1%), and dizziness (0.7%). Fimasartan is safe and effective in Mexican subjects with grade 1-2 essential hypertension. Copyright © 2017 Instituto Nacional de Cardiología Ignacio Chávez. Publicado por Masson Doyma México S.A. All rights reserved.

Hydrophobic recovery of repeatedly plasma-treated silicone rubber .2. A comparison of the hydrophobic recovery in air, water, or liquid nitrogen

NARCIS (Netherlands)

Everaert, EP; VanderMei, HC; Busscher, HJ

1996-01-01

Surfaces of medical grade silicone rubber (Q7-4750, Dow Coming) were modified by repeated (six times) RF plasma treatments using various discharge gases: oxygen, argon, carbon dioxide, and ammonia. The treated samples were stored for a period of 3 months in ambient air, water, or liquid nitrogen.

Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

International Nuclear Information System (INIS)

Wang, Xiaojuan; Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli; Zhou, Jun; Zhang, Zengxing

2015-01-01

Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

Energy Technology Data Exchange (ETDEWEB)

Wang, Xiaojuan [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhou, Jun, E-mail: zhoujunzhou@tongji.edu.cn [Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhang, Zengxing, E-mail: zhangzx@tongji.edu.cn [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China)

2015-10-01

Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

Porous silicon powder as an adsorbent of heavy metal (nickel)

Science.gov (United States)

Nabil, Marwa; Motaweh, Hussien A.

2018-04-01

New and inexpensive nanoporous silicon (NPS) powder was prepared by alkali chemical etching using sonication technique and was subsequently investigated as an adsorbent in batch systems for the adsorption Ni(II) ions in an aqueous solution. The optimum conditions for the Ni(II) ion adsorption capacity of the NPS powder were studied in detail by varying parameters such as the initial Ni(II) concentration, the solution pH value, the adsorption temperature and contact time. The results indicated that the maximum adsorption capacity and the maximum removal percent of Ni(II) reached 2665.33 mg/g and 82.6%, respectively, at an initial Ni(II) concentration of 100 mg/L, adsorption time of 30 min and no effect of the solution pH and adsorption temperature.

Low cost silicon solar array project silicon materials task: Establishment of the feasibility of a process capable of low-cost, high volume production of silane (step 1) and the pyrolysis of silane to semiconductor-grade silicon (step 2)

Science.gov (United States)

Breneman, W. C.; Cheung, H.; Farrier, E. G.; Morihara, H.

1977-01-01

A quartz fluid bed reactor capable of operating at temperatures of up to 1000 C was designed, constructed, and successfully operated. During a 30 minute experiment, silane was decomposed within the reactor with no pyrolysis occurring on the reactor wall or on the gas injection system. A hammer mill/roller-crusher system appeared to be the most practical method for producing seed material from bulk silicon. No measurable impurities were detected in the silicon powder produced by the free space reactor, using the cathode layer emission spectroscopic technique. Impurity concentration followed by emission spectroscopic examination of the residue indicated a total impurity level of 2 micrograms/gram. A pellet cast from this powder had an electrical resistivity of 35 to 45 ohm-cm and P-type conductivity.

Irradiation effects of swift heavy ions on gallium arsenide, silicon and silicon diodes

International Nuclear Information System (INIS)

Bhoraskar, V.N.

2001-01-01

The irradiation effects of high energy lithium, boron, oxygen and silicon ions on crystalline silicon, gallium arsenide, porous silicon and silicon diodes were investigated. The ion energy and fluence were varied over the ranges 30 to 100 MeV and 10 11 to 10 14 ions/cm 2 respectively. Semiconductor samples were characterized with the x-ray fluorescence, photoluminescence, thermally stimulated exo-electron emission and optical reflectivity techniques. The life-time of minority carriers in crystalline silicon was measured with a pulsed electron beam and the lithium depth distribution in GaAs was measured with the neutron depth profiling technique. The diodes were characterized through electrical measurements. The results of optical reflectivity, life-time of minority carriers and photoluminescence show that swift heavy ions induce defects in the surface region of crystalline silicon. In the ion-irradiated GaAs, migration of silicon, oxygen and lithium atoms from the buried region towards the surface was observed, with orders of magnitude enhancement in the diffusion coefficients. Enhancement in the photoluminescence intensity was observed in the GaAs and porous silicon samples that, were irradiated with silicon ions. The trade-off between the turn-off time and the voltage, drop in diodes irradiated with different swift heavy ions was also studied. (author)

Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

Energy Technology Data Exchange (ETDEWEB)

Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S. [Norton Co., Northboro, MA (United States). Advanced Ceramics Div.

1994-10-01

The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

Hydrogen in amorphous silicon

International Nuclear Information System (INIS)

Peercy, P.S.

1980-01-01

The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH 1 ) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon

A convenient way of manufacturing silicon nanotubes on a silicon substrate

Energy Technology Data Exchange (ETDEWEB)

Zhang, Changchang; Cheng, Heming; Liu, Xiang, E-mail: liuxiang@ahut.edu.cn

2016-07-01

A convenient approach of preparing silicon nanotubes (SiNTs) on a silicon substrate is described in this work in detail. Firstly, a porous silicon (PSi) slice is prepared by a galvanic displacement reaction. Then it is put into aqueous solutions of 20% (w%) ammonium fluoride and 2.5 mM cobalt nitrate for a predetermined time. The cobalt ions are reduced and the resulted cobalt particles are deposited on the PSi slice. After the cobalt particles are removed with 5 M nitric acid a plenty of SiNTs come out and exhibit disorderly on the silicon substrate, which are illustrated by scanning electron microscopy (SEM). The compositions of the SiNTs are examined by energy-dispersive X-ray spectroscopy. Based on the SEM images, a suggested mechanism is put forward to explain the generation of the SiNTs on the PSi substrate. - Highlights: • A facile approach of preparing silicon nano tubes was invented. • The experimental results demonstrated the strong reducibility of Si-H{sub x} species. • It provided a new way of manufacturing silicon-contained hybrids.

Development of Radiation Hard Radiation Detectors, Differences between Czochralski Silicon and Float Zone Silicon

CERN Document Server

Tuominen, Eija

2012-01-01

The purpose of this work was to develop radiation hard silicon detectors. Radiation detectors made ofsilicon are cost effective and have excellent position resolution. Therefore, they are widely used fortrack finding and particle analysis in large high-energy physics experiments. Silicon detectors willalso be used in the CMS (Compact Muon Solenoid) experiment that is being built at the LHC (LargeHadron Collider) accelerator at CERN (European Organisation for Nuclear Research). This work wasdone in the CMS programme of Helsinki Institute of Physics (HIP).Exposure of the silicon material to particle radiation causes irreversible defects that deteriorate theperformance of the silicon detectors. In HIP CMS Programme, our approach was to improve theradiation hardness of the silicon material with increased oxygen concentration in silicon material. Westudied two different methods: diffusion oxygenation of Float Zone silicon and use of high resistivityCzochralski silicon.We processed, characterised, tested in a parti...

Crystallisation and microstructure of low-silicon silumins with alloy additions

Directory of Open Access Journals (Sweden)

S. Pietrowski

2011-07-01

Full Text Available The paper presents the results of the analysis of crystallisation and microstructure of non-alloy silumins that contain: 2,0÷6,0% of Si and alloy additions, approximately: 4,0% Ni, 4,0% of Cu and 0,5% of Mg, the knowledge of which is still very little. It has been proven that in non-alloy silumins, the increase of silicone concentration causes extending of crystallisation time of the eutectic mixture α+and refinement of α phase dendrites. It also causes the increase of the temperature of crystallisation of the eutectic mixture α+ . Alloy additions: Ni, Cu and Mg decrease by approximately 30 C the liquidus and solidus temperatures of silumins and extend the time of their crystallisation by around 100 sec. in comparison with non-alloy silumins. It is caused by crystallisation of additional phases Al3NiCu, Mg2Si and Al2Cu. Nickel, copper and magnesium refine the microstructure of castings.

CHARACTERIZATION OF THE ELECTROPHYSICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE USING PROBE ELECTROMETRY METHODS

Directory of Open Access Journals (Sweden)

V. А. Pilipenko

2017-01-01

Full Text Available Introduction of submicron design standards into microelectronic industry and a decrease of the gate dielectric thickness raise the importance of the analysis of microinhomogeneities in the silicon-silicon dioxide system. However, there is very little to no information on practical implementation of probe electrometry methods, and particularly scanning Kelvin probe method, in the interoperational control of real semiconductor manufacturing process. The purpose of the study was the development of methods for nondestructive testing of semiconductor wafers based on the determination of electrophysical properties of the silicon-silicon dioxide interface and their spatial distribution over wafer’s surface using non-contact probe electrometry methods.Traditional C-V curve analysis and scanning Kelvin probe method were used to characterize silicon- silicon dioxide interface. The samples under testing were silicon wafers of KEF 4.5 and KDB 12 type (orientation <100>, diameter 100 mm.Probe electrometry results revealed uniform spatial distribution of wafer’s surface potential after its preliminary rapid thermal treatment. Silicon-silicon dioxide electric potential values were also higher after treatment than before it. This potential growth correlates with the drop in interface charge density. At the same time local changes in surface potential indicate changes in surface layer structure.Probe electrometry results qualitatively reflect changes of interface charge density in silicon-silicon dioxide structure during its technological treatment. Inhomogeneities of surface potential distribution reflect inhomogeneity of damaged layer thickness and can be used as a means for localization of interface treatment defects.

Silicon microphotonic waveguides

International Nuclear Information System (INIS)

Ta'eed, V.; Steel, M.J.; Grillet, C.; Eggleton, B.; Du, J.; Glasscock, J.; Savvides, N.

2004-01-01

Full text: Silicon microphotonic devices have been drawing increasing attention in the past few years. The high index-difference between silicon and its oxide (Δn = 2) suggests a potential for high-density integration of optical functions on to a photonic chip. Additionally, it has been shown that silicon exhibits strong Raman nonlinearity, a necessary property as light interaction can occur only by means of nonlinearities in the propagation medium. The small dimensions of silicon waveguides require the design of efficient tapers to couple light to them. We have used the beam propagation method (RSoft BeamPROP) to understand the principles and design of an inverse-taper mode-converter as implemented in several recent papers. We report on progress in the design and fabrication of silicon-based waveguides. Preliminary work has been conducted by patterning silicon-on-insulator (SOI) wafers using optical lithography and reactive ion etching. Thus far, only rib waveguides have been designed, as single-mode ridge-waveguides are beyond the capabilities of conventional optical lithography. We have recently moved to electron beam lithography as the higher resolutions permitted will provide the flexibility to begin fabricating sub-micron waveguides

Frontalis Sling Operation using Silicone Rod Compared with Autogenous Fascia Lata for Simple Congenital Ptosis

Directory of Open Access Journals (Sweden)

Purnima Rajkarnikar Sthapit

2014-09-01

Full Text Available Introduction: To evaluate the cosmetic results and recurrence of unilateral frontalis sling surgery using a silicone rod compared with autogenous fascia lata in cases of simple congenital ptosis. Methods: This is a retrospective comparative study of 59 patients who underwent a frontalis sling operation for congenital ptosis. Patients were divided into two groups according to the sling material used; an autogeneous fascia lata (fl group (n = 24 and a silicone rod group (sl (n = 35. Cosmetic results and recurrence rates were compared between these 2 groups. The cosmetic results of the frontalis sling operation were assessed as good, fair, or poor based on the difference between the Margin Reflex Distance of both eyelids and graded as good if the difference in two eyes was ≤1mm and poor if it was 2mm or more. Recurrence was defined as the conversion of the cosmetic result from good or fair to poor category. Results: At postoperative day seven and 30, MRD of both the groups were good but on three months follow-up MRD of silicon rod group dropped, however it was not statistically significant .Lid contour was good in both the groups, however, lid symmetry was poor in two cases of fascia lata at three months follow-up. Repeat surgery for poor outcome was done in 8.6% of cases in silicon rod and 8.3% of fascia lata group. Conclusions: The frontalis sling operation using either a silicone rod or autogenous fascia lata showed equally good cosmetic results and lower recurrence rate at three months follow up. Keywords: congenital ptosis; fascia lata; frontalis sling surgery; margin reflex distance; silicone rod.

Ceramic silicon-boron-carbon fibers from organic silicon-boron-polymers

Science.gov (United States)

Riccitiello, Salvatore R. (Inventor); Hsu, Ming-Ta S. (Inventor); Chen, Timothy S. (Inventor)

1993-01-01

Novel high strength ceramic fibers derived from boron, silicon, and carbon organic precursor polymers are discussed. The ceramic fibers are thermally stable up to and beyond 1200 C in air. The method of preparation of the boron-silicon-carbon fibers from a low oxygen content organosilicon boron precursor polymer of the general formula Si(R2)BR(sup 1) includes melt-spinning, crosslinking, and pyrolysis. Specifically, the crosslinked (or cured) precursor organic polymer fibers do not melt or deform during pyrolysis to form the silicon-boron-carbon ceramic fiber. These novel silicon-boron-carbon ceramic fibers are useful in high temperature applications because they retain tensile and other properties up to 1200 C, from 1200 to 1300 C, and in some cases higher than 1300 C.

Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

Energy Technology Data Exchange (ETDEWEB)

Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca [Queensland Micro and Nanotechnology Centre and Environmental Futures Research Institute, Griffith University, Nathan QLD 4111 (Australia); Boeckl, John J. [Materials and Manufacturing Directorate, Air Force Research Laboratories, Wright-Patterson Air Force Base, Ohio 45433 (United States); Hellerstedt, Jack; Fuhrer, Michael S. [Monash Centre for Atomically Thin Materials, Monash University, Monash, VIC 3800 (Australia)

2016-07-04

Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High–resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

Electrical production testing of the D0 Silicon microstrip tracker detector modules

Energy Technology Data Exchange (ETDEWEB)

D0, SMT Production Testing Group; /Fermilab

2006-03-01

The D0 Silicon Microstrip Tracker (SMT) is the innermost system of the D0 detector in Run 2. It consists of 912 detector units, corresponding to 5 different types of assemblies, which add up to a system with 792,576 readout channels. The task entrusted to the Production Testing group was to thoroughly debug, test and grade each detector module before its installation in the tracker. This note describes the production testing sequence and the procedures by which the detector modules were electrically tested and characterized at the various stages of their assembly.

Potassium Silicate Foliar Fertilizer Grade from Geothermal Sludge and Pyrophyllite

Directory of Open Access Journals (Sweden)

Muljani Srie

2016-01-01

Full Text Available Potassium silicate fertilizer grade were successfully produced by direct fusion of silica (SiO2 and potasium (KOH and K2CO3 in furnaces at temperatures up to melting point of mixture. The geothermal sludge (98% SiO2 and the pyrophyllite (95% SiO2 were used as silica sources. The purposes of the study was to synthesise potassium silicate fertilizer grade having solids concentrations in the range of 31-37% K2O, and silica in the range of 48-54% SiO2. The weight ratio of silicon dioxide/potasium solid being 1:1 to 5:1. Silica from geothermal sludge is amorphous, whereas pyrophylite is crystalline phase. The results showed that the amount of raw materials needed to get the appropriate molar ratio of potassium silicate fertilizer grade are different, as well as the fusion temperature of the furnace. Potassium silicate prepared from potassium hydroxide and geothermal sludge produced a low molar ratio (2.5: 1 to 3: 1. The potassium required quite small (4:1 in weight ratio, and on a fusion temperature of about 900 °C. Meanwhile, the potassium silicate prepared from pyrophyllite produced a high molar ratio (1.4 - 9.4 and on a fusion temperature of about 1350 °C, so that potassium needed large enough to meet the required molar ratio for the fertilizer grade. The product potassium silicate solid is amorphous with a little trace of crystalline.

Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

International Nuclear Information System (INIS)

Choi, Sangmoo; Yang, Hyundeok; Chang, Man; Baek, Sungkweon; Hwang, Hyunsang; Jeon, Sanghun; Kim, Juhyung; Kim, Chungwoo

2005-01-01

Silicon nitride with silicon nanocrystals formed by low-energy silicon plasma immersion ion implantation has been investigated as a charge trapping layer of a polycrystalline silicon-oxide-nitride-oxide-silicon-type nonvolatile memory device. Compared with the control sample without silicon nanocrystals, silicon nitride with silicon nanocrystals provides excellent memory characteristics, such as larger width of capacitance-voltage hysteresis, higher program/erase speed, and lower charge loss rate at elevated temperature. These improved memory characteristics are derived by incorporation of silicon nanocrystals into the charge trapping layer as additional accessible charge traps with a deeper effective trap energy level

Comparison of weekly administration of cisplatin versus three courses of cisplatin 100 mg/m2 for definitive radiochemotherapy of locally advanced head-and-neck cancers

International Nuclear Information System (INIS)

Rades, Dirk; Seidl, Daniel; Janssen, Stefan; Bajrovic, Amira; Karner, Katarina; Strojan, Primoz; Schild, Steven E

2016-01-01

To compare definitive radiochemotherapy with weekly administration of 30–40 mg/m 2 of cisplatin to 100 mg/m 2 of cisplatin on days 1, 22 and 43 for outcomes and toxicity in patients with squamous cell carcinoma of the head-and-neck. Seventy-five patients receiving radiochemotherapy with weekly cisplatin (30–40 mg/m 2 ) were compared to 58 patients receiving radiochemotherapy with 100 mg/m 2 cisplatin on days 1, 22 and 43. Radiochemotherapy regimen plus seven characteristics (age, gender, performance score, tumor site, T-/N-category, histologic grading) were evaluated for locoregional control (LRC), metastases-free survival (MFS) and overall survival (OS). Radiochemotherapy groups were compared for toxicity. On multivariate analysis, improved LRC was associated with cisplatin 100 mg/m 2 (hazard ratio [HR] 1.57; p = 0.008) and female gender (HR 4.37; p = 0.003). Radiochemotherapy regimen was not significantly associated with MFS on univariate analysis (p = 0.66). On multivariate analysis, better MFS was associated with ECOG performance score 0–1 (HR 5.63; p < 0.001) and histological grade 1–2 (HR 1.81; p = 0.002). On multivariate analysis, improved OS was associated with cisplatin 100 mg/m 2 (HR 1.33; p = 0.023), ECOG performance score 0–1 (HR 2.15; p = 0.029) and female gender (HR 1.98; p = 0.026). Cisplatin 100 mg/m 2 was associated with higher rates of grade ≥3 hematotoxicity (p = 0.004), grade ≥2 renal failure (p = 0.004) and pneumonia/sepsis (p = 0.033). Radiochemotherapy with 100 mg/m 2 of cisplatin every 3 weeks resulted in better LRC and OS than weekly doses of 30–40 mg/m 2 . Given the limitations of a retrospective study, 100 mg/m 2 of cisplatin appears preferable. Since this regimen was associated with considerable acute toxicity, patients require close monitoring

Use of hydroxypropylmethylcellulose 2% for removing adherent silicone oil from silicone intraocular lenses

OpenAIRE

Wong , S Chien; Ramkissoon , Yashin D; Lopez , Mauricio; Page , Kristopher; Parkin , Ivan P; Sullivan , Paul M

2009-01-01

Abstract Background / aims: To investigate the effect of hydroxypropylmethylcellulose (HPMC) on the physical interaction (contact angle) between silicone oil and a silicone intraocular lens (IOL). Methods: In vitro experiments were performed, to determine the effect of HPMC (0.5%, 1% or 2%), with or without an additional simple mechanical manoeuvre, on the contact angle of silicone oil at the surface of both silicone and acrylic (control) IOLs. A balanced salt solu...

Dissolution of Monocrystalline Silicon Nanomembranes and Their Use as Encapsulation Layers and Electrical Interfaces in Water-Soluble Electronics.

Science.gov (United States)

Lee, Yoon Kyeung; Yu, Ki Jun; Song, Enming; Barati Farimani, Amir; Vitale, Flavia; Xie, Zhaoqian; Yoon, Younghee; Kim, Yerim; Richardson, Andrew; Luan, Haiwen; Wu, Yixin; Xie, Xu; Lucas, Timothy H; Crawford, Kaitlyn; Mei, Yongfeng; Feng, Xue; Huang, Yonggang; Litt, Brian; Aluru, Narayana R; Yin, Lan; Rogers, John A

2017-12-26

The chemistry that governs the dissolution of device-grade, monocrystalline silicon nanomembranes into benign end products by hydrolysis serves as the foundation for fully eco/biodegradable classes of high-performance electronics. This paper examines these processes in aqueous solutions with chemical compositions relevant to groundwater and biofluids. The results show that the presence of Si(OH) 4 and proteins in these solutions can slow the rates of dissolution and that ion-specific effects associated with Ca 2+ can significantly increase these rates. This information allows for effective use of silicon nanomembranes not only as active layers in eco/biodegradable electronics but also as water barriers capable of providing perfect encapsulation until their disappearance by dissolution. The time scales for this encapsulation can be controlled by introduction of dopants into the Si and by addition of oxide layers on the exposed surfaces.The former possibility also allows the doped silicon to serve as an electrical interface for measuring biopotentials, as demonstrated in fully bioresorbable platforms for in vivo neural recordings. This collection of findings is important for further engineering development of water-soluble classes of silicon electronics.

Single-Event Effects in Silicon and Silicon Carbide Power Devices

Science.gov (United States)

Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

2014-01-01

NASA Electronics Parts and Packaging program-funded activities over the past year on single-event effects in silicon and silicon carbide power devices are presented, with focus on SiC device failure signatures.

Porous Silicon Nanowires

Science.gov (United States)

Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

2011-01-01

In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

Magnesium-Based Sacrificial Anode Cathodic Protection Coatings (Mg-Rich Primers for Aluminum Alloys

Directory of Open Access Journals (Sweden)

Michael D. Blanton

2012-09-01

Full Text Available Magnesium is electrochemically the most active metal employed in common structural alloys of iron and aluminum. Mg is widely used as a sacrificial anode to provide cathodic protection of underground and undersea metallic structures, ships, submarines, bridges, decks, aircraft and ground transportation systems. Following the same principle of utilizing Mg characteristics in engineering advantages in a decade-long successful R&D effort, Mg powder is now employed in organic coatings (termed as Mg-rich primers as a sacrificial anode pigment to protect aerospace grade aluminum alloys against corrosion. Mg-rich primers have performed very well on aluminum alloys when compared against the current chromate standard, but the carcinogenic chromate-based coatings/pretreatments are being widely used by the Department of Defense (DoD to protect its infrastructure and fleets against corrosion damage. Factors such as reactivity of Mg particles in the coating matrix during exposure to aggressive corrosion environments, interaction of atmospheric gases with Mg particles and the impact of Mg dissolution, increases in pH and hydrogen gas liberation at coating-metal interface, and primer adhesion need to be considered for further development of Mg-rich primer technology.

Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies

Science.gov (United States)

Blewer, Robert S.; Gullinger, Terry R.; Kelly, Michael J.; Tsao, Sylvia S.

1991-01-01

A method of forming a multiple level porous silicon substrate for semiconductor integrated circuits including anodizing non-porous silicon layers of a multi-layer silicon substrate to form multiple levels of porous silicon. At least one porous silicon layer is then oxidized to form an insulating layer and at least one other layer of porous silicon beneath the insulating layer is metallized to form a buried conductive layer. Preferably the insulating layer and conductive layer are separated by an anodization barrier formed of non-porous silicon. By etching through the anodization barrier and subsequently forming a metallized conductive layer, a fully or partially insulated buried conductor may be fabricated under single crystal silicon.

Silicon: electrochemistry and luminescence

NARCIS (Netherlands)

Kooij, Ernst Stefan

1997-01-01

The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible

Polycrystalline Silicon Gettered by Porous Silicon and Heavy Phosphorous Diffusion

Institute of Scientific and Technical Information of China (English)

LIU Zuming(刘祖明); Souleymane K Traore; ZHANG Zhongwen(张忠文); LUO Yi(罗毅)

2004-01-01

The biggest barrier for photovoltaic (PV) utilization is its high cost, so the key for scale PV utilization is to further decrease the cost of solar cells. One way to improve the efficiency, and therefore lower the cost, is to increase the minority carrier lifetime by controlling the material defects. The main defects in grain boundaries of polycrystalline silicon gettered by porous silicon and heavy phosphorous diffusion have been studied. The porous silicon was formed on the two surfaces of wafers by chemical etching. Phosphorous was then diffused into the wafers at high temperature (900℃). After the porous silicon and diffusion layers were removed, the minority carrier lifetime was measured by photo-conductor decay. The results show that the lifetime's minority carriers are increased greatly after such treatment.

EMMPRIN expression positively correlates with WHO grades of astrocytomas and meningiomas.

Science.gov (United States)

Tsai, Wen-Chiuan; Chen, Ying; Huang, Li-Chun; Lee, Herng-Sheng; Ma, Hsin-I; Huang, Shih-Ming; Sytwu, Huey-Kang; Hueng, Dueng-Yuan

2013-09-01

High-grade primary brain tumors possessed poor outcome due to invasiveness. Extracellular matrix metalloproteinase inducer (EMMPRIN) stimulates peri-tumoral fibroblasts to secrete matrix metalloproteinase and promote invasiveness. This study hypothesized that high-grade brain tumors overexpress EMMPRIN. Analyzing the public delinked database from the Gene Expression Omnibus profile, the results showed that the EMMPRIN mRNA level was higher in WHO grade IV (n = 81) than in grade III (n = 19, p EMMPRIN levels positively correlated with WHO grades for astrocytomas (p = 0.008) and meningiomas (p = 0.048). EMMPRIN mRNA levels in conventional glioma cell lines (n = 36) was not less than those in glioma primary culture cells (n = 27) and glioblastoma stem-like cells (n = 12). The GBM8401, U87MG, and LN229 human glioma cell lines also overexpressed EMMPRIN. Hematoxylin and eosin, IHC, and immunofluorescence staining of xenografts confirmed that high-grade brain tumors overexpressed EMMPRIN. Lastly, Kaplan-Meier analysis revealed poorer survival in WHO grade IV (n = 56) than in grade III astrocytomas (n = 21, by log-rank test; p = 0.0001, 95 % CI: 1.842-3.053). However, in high-grade astrocytomas, there was no difference in survival between high and low EMMPRIN mRNA levels. Thus, this study identified that high-grade brain tumors overexpress EMMPRIN, which positively correlates with WHO grades in human astrocytomas and meningiomas, and suggests that EMMPRIN may be a therapeutic target of brain tumor.

Autoimmune Syndrome Induced by Adjuvants (ASIA after Silicone Breast Augmentation Surgery

Directory of Open Access Journals (Sweden)

Daniel Nunes e Silva, MD

2017-09-01

Full Text Available Summary:. Generally, the main complications of silicone implantation are local symptoms. However, some patients develop late-onset systemic symptoms often associated with a rare form of hyperactive immune response, as part of a syndrome known as autoimmune syndrome induced by adjuvants (ASIA. Reported cases of ASIA have shown resolution with explantation, but not with immunomodulatory therapy. In this report, we described a case of a previously healthy 23-year-old woman, who has undergone silicone breast implant augmentation, for aesthetic reasons, and developed localized cutaneous impairment 3 years postsurgery. She received a diagnosis of ASIA with a new presentation: Lupus-like manifestation through localized cutaneous impairment. This patient’s symptoms were managed without the need for surgical intervention, which has not been previously reported, because the patient did not want an explantation for aesthetic reasons. The patient was started on hydroxychloroquine, 400 mg per day, and remains asymptomatic after 2 years of treatment. The exact predisposition to ASIA is still unknown. Without implant explantation and with immunomodulatory treatment, this patient’s condition substantially improved. Based on our current understanding of this disease, it might not be prudent to indicate breast augmentation with silicone implants in patients with documented autoimmune reaction to an adjuvant, an established autoimmune condition, or genetic predisposition. However, if a patient does develop silicone-induced ASIA, explantation is no longer the only successfully reported option, as these symptoms can be managed with immune suppression.

Thermoelectric characteristics of Pt-silicide/silicon multi-layer structured p-type silicon

International Nuclear Information System (INIS)

Choi, Wonchul; Jun, Dongseok; Kim, Soojung; Shin, Mincheol; Jang, Moongyu

2015-01-01

Electric and thermoelectric properties of silicide/silicon multi-layer structured devices were investigated with the variation of silicide/silicon heterojunction numbers from 3 to 12 layers. For the fabrication of silicide/silicon multi-layered structure, platinum and silicon layers are repeatedly sputtered on the (100) silicon bulk substrate and rapid thermal annealing is carried out for the silicidation. The manufactured devices show ohmic current–voltage (I–V) characteristics. The Seebeck coefficient of bulk Si is evaluated as 195.8 ± 15.3 μV/K at 300 K, whereas the 12 layered silicide/silicon multi-layer structured device is evaluated as 201.8 ± 9.1 μV/K. As the temperature increases to 400 K, the Seebeck coefficient increases to 237.2 ± 4.7 μV/K and 277.0 ± 1.1 μV/K for bulk and 12 layered devices, respectively. The increase of Seebeck coefficient in multi-layered structure is mainly attributed to the electron filtering effect due to the Schottky barrier at Pt-silicide/silicon interface. At 400 K, the thermal conductivity is reduced by about half of magnitude compared to bulk in multi-layered device which shows the efficient suppression of phonon propagation by using Pt-silicide/silicon hetero-junctions. - Highlights: • Silicide/silicon multi-layer structured is proposed for thermoelectric devices. • Electric and thermoelectric properties with the number of layer are investigated. • An increase of Seebeck coefficient is mainly attributed the Schottky barrier. • Phonon propagation is suppressed with the existence of Schottky barrier. • Thermal conductivity is reduced due to the suppression of phonon propagation

Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

KAUST Repository

Chaieb, Sahraoui

2015-04-09

Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

KAUST Repository

Chaieb, Saharoui; Mughal, Asad Jahangir

2015-01-01

Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

The effect of silicon crystallographic orientation on the formation of silicon nanoclusters during anodic electrochemical etching

International Nuclear Information System (INIS)

Timokhov, D. F.; Timokhov, F. P.

2009-01-01

Possible ways for increasing the photoluminescence quantum yield of porous silicon layers have been investigated. The effect of the anodization parameters on the photoluminescence properties for porous silicon layers formed on silicon substrates with different crystallographic orientations was studied. The average diameters for silicon nanoclusters are calculated from the photoluminescence spectra of porous silicon. The influence of the substrate crystallographic orientation on the photoluminescence quantum yield of porous silicon is revealed. A model explaining the effect of the substrate orientation on the photoluminescence properties for the porous silicon layers formed by anode electrochemical etching is proposed.

Photoluminescence of Mg_2Si films fabricated by magnetron sputtering

International Nuclear Information System (INIS)

Liao, Yang-Fang; Xie, Quan; Xiao, Qing-Quan; Chen, Qian; Fan, Meng-Hui; Xie, Jing; Huang, Jin; Zhang, Jin-Min; Ma, Rui; Wang, Shan-Lan; Wu, Hong-Xian; Fang, Di

2017-01-01

Highlights: • High quality Mg_2Si films were grown on Si (111) and glass substrates with magnetron sputtering, respectively. • The first observation of Photoluminescence (PL) of Mg_2Si films was reported. • The Mg_2Si PL emission wavelengths are almost independence on temperature in the range of 77–300 K. • The strongest PL emissions may be attributed to interstitial Mg donor level to valence band transitions. • The activation energy of Mg_2Si is determined from the quenching of major luminescence peaks. - Abstract: To understand the photoluminescence mechanisms and optimize the design of Mg_2Si-based light-emitting devices, Mg_2Si films were fabricated on silicon (111) and glass substrates by magnetron sputtering technique, and the influences of different substrates on the photoelectric properties of Mg_2Si films were investigated systematically. The crystal structure, cross-sectional morphology, composition ratios and temperature-dependent photoluminescence (PL) of the Mg_2Si films were examined using X-ray diffraction (XRD), Scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS) and PL measurement system, respectively. XRD results indicate that the Mg_2Si film on Si (111) displays polycrystalline structure, whereas Mg_2Si film on glass substrate is of like-monocrystalline structure.SEM results show that Mg_2Si film on glass substrate is very compact with a typical dense columnar structure, and the film on Si substrate represents slight delamination phenomenon. EDS results suggest that the stoichiometry of Mg and Si is approximately 2:1. Photoluminescence (PL) of Mg_2Si films was observed for the first time. The PL emission wavelengths of Mg_2Si are almost independence on temperature in the range of 77–300 K. The PL intensity decreases gradually with increasing temperature. The PL intensity of Mg_2Si films on glass substrate is much larger than that of Mg_2Si film on Si (111) substrate. The activation energy of 18 meV is

P-n junction diodes with polarization induced p-type graded InxGa1-xN layer

Science.gov (United States)

Enatsu, Yuuki; Gupta, Chirag; Keller, Stacia; Nakamura, Shuji; Mishra, Umesh K.

2017-10-01

In this study, p-n junction diodes with polarization induced p-type layer are demonstrated on Ga polar (0001) bulk GaN substrates. A quasi-p-type region is obtained by linearly grading the indium composition in un-doped InxGa1-xN layers from 0% to 5%, taking advantage of the piezoelectric and spontaneous polarization fields which exist in group III-nitride heterostructures grown in the typical (0001) or c-direction. The un-doped graded InxGa1-xN layers needed to be capped with a thin Mg-doped InxGa1-xN layer to make good ohmic contacts and to reduce the on-resistance of the p-n diodes. The Pol-p-n junction diodes exhibited similar characteristics compared to reference samples with traditional p-GaN:Mg layers. A rise in breakdown voltage from 30 to 110 V was observed when the thickness of the graded InGaN layer was increased from 100 to 600 nm at the same grade composition.

Joining elements of silicon carbide

International Nuclear Information System (INIS)

Olson, B.A.

1979-01-01

A method of joining together at least two silicon carbide elements (e.g.in forming a heat exchanger) is described, comprising subjecting to sufficiently non-oxidizing atmosphere and sufficiently high temperature, material placed in space between the elements. The material consists of silicon carbide particles, carbon and/or a precursor of carbon, and silicon, such that it forms a joint joining together at least two silicon carbide elements. At least one of the elements may contain silicon. (author)

Graphitized silicon carbide microbeams: wafer-level, self-aligned graphene on silicon wafers

International Nuclear Information System (INIS)

Cunning, Benjamin V; Ahmed, Mohsin; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca; Wood, Barry

2014-01-01

Currently proven methods that are used to obtain devices with high-quality graphene on silicon wafers involve the transfer of graphene flakes from a growth substrate, resulting in fundamental limitations for large-scale device fabrication. Moreover, the complex three-dimensional structures of interest for microelectromechanical and nanoelectromechanical systems are hardly compatible with such transfer processes. Here, we introduce a methodology for obtaining thousands of microbeams, made of graphitized silicon carbide on silicon, through a site-selective and wafer-scale approach. A Ni-Cu alloy catalyst mediates a self-aligned graphitization on prepatterned SiC microstructures at a temperature that is compatible with silicon technologies. The graphene nanocoating leads to a dramatically enhanced electrical conductivity, which elevates this approach to an ideal method for the replacement of conductive metal films in silicon carbide-based MEMS and NEMS devices. (paper)

Crack detection and analyses using resonance ultrasonic vibrations in full-size crystalline silicon wafers

International Nuclear Information System (INIS)

Belyaev, A.; Polupan, O.; Dallas, W.; Ostapenko, S.; Hess, D.; Wohlgemuth, J.

2006-01-01

An experimental approach for fast crack detection and length determination in full-size solar-grade crystalline silicon wafers using a resonance ultrasonic vibrations (RUV) technique is presented. The RUV method is based on excitation of the longitudinal ultrasonic vibrations in full-size wafers. Using an external piezoelectric transducer combined with a high sensitivity ultrasonic probe and computer controlled data acquisition system, real-time frequency response analysis can be accomplished. On a set of identical crystalline Si wafers with artificially introduced periphery cracks, it was demonstrated that the crack results in a frequency shift in a selected RUV peak to a lower frequency and increases the resonance peak bandwidth. Both characteristics were found to increase with the length of the crack. The frequency shift and bandwidth increase serve as reliable indicators of the crack appearance in silicon wafers and are suitable for mechanical quality control and fast wafer inspection

Randomised clinical trial: daily pantoprazole magnesium 40 mg vs. esomeprazole 40 mg for gastro-oesophageal reflux disease, assessed by endoscopy and symptoms.

Science.gov (United States)

Moraes-Filho, J P; Pedroso, M; Quigley, E M M

2014-01-01

Pantoprazole magnesium (pantoprazole-Mg) may display extended inhibition of the proton pump with the potential for improved clinical efficacy in gastro-oesophageal reflux disease (GERD). To compare the efficacy of pantoprazole-Mg and esomeprazole in GERD. Gastro-oesophageal reflux disease (Los Angeles grades A-D) patients were randomised to 4 weeks of treatment with pantoprazole-Mg (n = 290) or esomeprazole (n = 288), both 40 mg once daily, in this multicentre (14 Brazilian sites in 9 cities), double-blind study, with an additional 4 weeks' treatment in nonresponding patients. Severity of oesophagitis (at endoscopy) and GERD-related symptoms (ReQuest-GI) were assessed. The primary end point was the proportion of patients in complete remission (ReQuest-GI score <1.73 plus endoscopic healing) at week 4. Complete remission occurred in 61% of patients in each treatment group at 4 weeks (primary endpoint) and in 81% and 79% of patients in the pantoprazole-Mg and esomeprazole groups at 8 weeks, with no significant differences. Mucosal healing rates were high and not significantly different. At 8 weeks, symptom relief with pantoprazole-Mg was significantly greater than that with esomeprazole (91.6% vs. 86.0%, P = 0.0370) because of continued improvement in symptoms with pantoprazole-Mg from week 4 to week 8 (P = 0.0206). Pantoprazole-Mg 40 mg was at least as effective as esomeprazole 40 mg for complete remission and the mucosal healing rate was high. Symptom relief with pantoprazole-Mg continued to improve from 4 to 8 weeks and was greater than that with esomeprazole at week 8, suggesting an extended period of treatment effect (ClinicalTrials.gov identifier: NCT01132638). © 2013 John Wiley & Sons Ltd.

Silicon liquid for cooling coal cutter loader motors

Energy Technology Data Exchange (ETDEWEB)

Donets, I K; Sukhanov, V V; Tsingarelli, E P; Dmitrenko, Yu I; Kovalev, E B

1983-05-01

Several silicones were tested with a view to their suitability for use as a cutter loader engine coolant. None were particularly toxic and FM-5.6AP had the best engineering properties; a full toxicological evaluation was therefore made of it. Threshold concentrations of FM-5.6AP were 450 and 24.1 mg/m/sup 3/ for the acute and chronic tests respectively. Increased temperature (120 C) did not affect the toxicity of the vapors significantly. No influence on the phagocytosis, deposition and elimination of coal dust in the lungs was found. Tests carried out underground in a Donbass mine revealed no harmful effects on miners. Laboratory and mine tests using an EhKVZh-315 cutter loader engine revealed that the quantity of FM-5.6AP vapor present in the air flow is less than the detectable minimum (0.01 mg/ml). It may therefore safely be used as a dielectric liquid in cutter loader engines.

Comparison of 1000-Centistoke versus 5000-Centistoke Silicone Oil in Complex Retinal Detachment Surgery.

Science.gov (United States)

Zafar, Shakir; Shakir, Munira; Mahmood, Syed Asaad; Amin, Saima; Iqbal, Zafar

2016-01-01

To compare the efficacy and complications of using 1000-centistoke versus 5000-centistoke silicone oil for complex retinal detachment repair. Case series. LRBT Tertiary Eye Hospital, Karachi, from January 2007 to June 2013. Eighty-five eyes (85 patients) presenting with superior rhegmatogenous retinal detachments associated with PVR grades B and C (involving not more than 3 clock hours) were randomized to either 1000 centistokes (n=44) or 5000 centistokes (n=41) silicone oil group. All patients underwent 23-gauge pars plana vitrectomy surgery with silicone oil intraocular tamponade. Patient data was analysed at 18 months post-operatively. IBM SPSS 21 was used for data analysis. There were 52 male and 33 female patients aged between 22 and 70 years (45.2 ±16.2). After the first surgery, successful reattachment of the retina was achieved in 67 eyes (78.8%); of which 35 eyes were in 1000-centistoke and 32 eyes in 5000-centistoke groups. Mean pre-operative Best Corrected Visual Acuity (BCVA) was 1.63 ±0.54 which was improved to a mean post-operative BCVAof 1.46 ±0.78 (1.42 ±0.74 in 1000-centistoke group; 1.49 ±0.78 in 5000 centistoke group). The 1000-centistoke group had a significantly higher frequency of oil emulsification which necessitated early removal of silicone oil. There were 66 eyes (77%) with at least one complication (34 eyes in 1000-centistoke group; 32 eyes in 5000-centistoke group) including cataract, corneal abnormalities, raised IOP, hypotony, vitreous haemorrhage and retinal redetachment. Although visual and anatomical outcomes were comparable between the two groups, the 1000-centistoke silicone oil group developed early oil emulsification necessitating its early removal.

Use of porous silicon to minimize oxidation induced stacking fault defects in silicon

International Nuclear Information System (INIS)

Shieh, S.Y.; Evans, J.W.

1992-01-01

This paper presents methods for minimizing stacking fault defects, generated during oxidation of silicon, include damaging the back of the wafer or depositing poly-silicon on the back. In either case a highly defective structure is created and this is capable of gettering either self-interstitials or impurities which promote nucleation of stacking fault defects. A novel method of minimizing these defects is to form a patch of porous silicon on the back of the wafer by electrochemical etching. Annealing under inert gas prior to oxidation may then result in the necessary gettering. Experiments were carried out in which wafers were subjected to this treatment. Subsequent to oxidation, the wafers were etched to remove oxide and reveal defects. The regions of the wafer adjacent to the porous silicon patch were defect-free, whereas remote regions had defects. Deep level transient spectroscopy has been used to examine the gettering capability of porous silicon, and the paper discusses the mechanism by which the porous silicon getters

Indentation fatigue in silicon nitride, alumina and silicon carbide ...

Indian Academy of Sciences (India)

Repeated indentation fatigue (RIF) experiments conducted on the same spot of different structural ceramics viz. a hot pressed silicon nitride (HPSN), sintered alumina of two different grain sizes viz. 1 m and 25 m, and a sintered silicon carbide (SSiC) are reported. The RIF experiments were conducted using a Vicker's ...

Silicon web process development

Science.gov (United States)

Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Skutch, M. E.; Driggers, J. M.; Hopkins, R. H.

1981-01-01

The silicon web process takes advantage of natural crystallographic stabilizing forces to grow long, thin single crystal ribbons directly from liquid silicon. The ribbon, or web, is formed by the solidification of a liquid film supported by surface tension between two silicon filaments, called dendrites, which border the edges of the growing strip. The ribbon can be propagated indefinitely by replenishing the liquid silicon as it is transformed to crystal. The dendritic web process has several advantages for achieving low cost, high efficiency solar cells. These advantages are discussed.

Characterization of silicon oxynitride films prepared by the simultaneous implantation of oxygen and nitrogen ions into silicon

International Nuclear Information System (INIS)

Hezel, R.; Streb, W.

1985-01-01

Silicon oxynitride films about 5 nm in thickness were prepared by simultaneously implanting 5 keV oxygen and nitrogen ions into silicon at room temperature up to saturation. These films with concentrations ranging from pure silicon oxide to silicon nitride were characterized using Auger electron spectroscopy, electron energy loss spectroscopy and depth-concentration profiling. The different behaviour of the silicon oxynitride films compared with those of silicon oxide and silicon nitride with regard to thermal stability and hardness against electron and argon ion irradiation is pointed out. (Auth.)

Determination of silicon and aluminum in silicon carbide nanocrystals by high-resolution continuum source graphite furnace atomic absorption spectrometry.

Science.gov (United States)

Dravecz, Gabriella; Bencs, László; Beke, Dávid; Gali, Adam

2016-01-15

The determination of Al contaminant and the main component Si in silicon carbide (SiC) nanocrystals with the size-distribution of 1-8nm dispersed in an aqueous solution was developed using high-resolution continuum source graphite furnace atomic absorption spectrometry (HR-CS-GFAAS). The vaporization/atomization processes were investigated in a transversally heated graphite atomizer by evaporating solution samples of Al and Si preserved in various media (HCl, HNO3). For Si, the best results were obtained by applying a mixture of 5µg Pd plus 5µg Mg, whereas for Al, 10µg Mg (each as nitrate solution) was dispensed with the samples, but the results obtained without modifier were found to be better. This way a maximum pyrolysis temperature of 1200°C for Si and 1300°C for Al could be used, and the optimum (compromise) atomization temperature was 2400°C for both analytes. The Si and Al contents of different sized SiC nanocrystals, dispersed in aqueous solutions, were determined against aqueous (external) calibration standards. The correlation coefficients (R values) of the calibrations were found to be 0.9963 for Si and 0.9991 for Al. The upper limit of the linear calibration range was 2mg/l Si and 0.25mg/l Al. The limit of detection was 3µg/l for Si and 0.5µg/l for Al. The characteristic mass (m0) was calculated to be 389pg Si and 6.4pg Al. The Si and Al content in the solution samples were found to be in the range of 1.0-1.7mg/l and 0.1-0.25mg/l, respectively. Copyright © 2015 Elsevier B.V. All rights reserved.

Silicon germanium mask for deep silicon etching

KAUST Repository

Serry, Mohamed

2014-07-29

Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

Silicon germanium mask for deep silicon etching

KAUST Repository

Serry, Mohamed; Rubin, Andrew; Refaat, Mohamed; Sedky, Sherif; Abdo, Mohammad

2014-01-01

Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

Evanescent field phase shifting in a silicon nitride waveguide using a coupled silicon slab

DEFF Research Database (Denmark)

Jensen, Asger Sellerup; Oxenløwe, Leif Katsuo; Green, William M. J.

2015-01-01

An approach for electrical modulation of low-loss silicon nitride waveguides is proposed, using a silicon nitride waveguide evanescently loaded with a thin silicon slab. The thermooptic phase-shift characteristics are investigated in a racetrack resonator configuration....

Analysis of Silicones Released from Household Items and Baby Articles by Direct Analysis in Real Time-Mass Spectrometry

Science.gov (United States)

Gross, Jürgen H.

2015-03-01

Direct analysis in real time-mass spectrometry (DART-MS) enables screening of articles of daily use made of polydimethylsiloxanes (PDMS), commonly known as silicone rubber, to assess their tendency to release low molecular weight silicone oligomers. DART-MS analyses were performed on a Fourier transform ion cyclotron resonance (FT-ICR) mass spectrometer. Flexible silicone baking molds, a watch band, and a dough scraper, as baby articles different brands of pacifiers, nipples, and a teething ring have been examined. While somewhat arbitrarily chosen, the set can be regarded as representative of household items, baby articles, and other objects made of silicone rubber. For comparison, two brands of silicone septa and as blanks a glass slide and a latex pacifier were included. Differences between the objects were mainly observed in terms of molecular weight distribution and occasional release of other compounds in addition to PDMS. Other than that, all objects made of silicone rubber released significant amounts of PDMS during DART analysis. To provide a coarse quantification, a calibration based on silicone oil was established, which delivered PDMS losses from 20 μg to >100 μg during the 16-s period per measurement. Also, the extraction of baking molds in rapeseed oil demonstrated a PDMS release at the level of 1 μg mg-1. These findings indicate a potential health hazard from frequent or long-term use of such items. This work does not intend to blame certain brands of such articles. Nonetheless, a higher level of awareness of this source of daily silicone intake is suggested.

Selective formation of porous silicon

Science.gov (United States)

Fathauer, Robert W. (Inventor); Jones, Eric W. (Inventor)

1993-01-01

A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO3:H2O. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70 percent, the porous silicon pattern emits visible light at room temperature.

Scalable Production of Si Nanoparticles Directly from Low Grade Sources for Lithium-Ion Battery Anode.

Science.gov (United States)

Zhu, Bin; Jin, Yan; Tan, Yingling; Zong, Linqi; Hu, Yue; Chen, Lei; Chen, Yanbin; Zhang, Qiao; Zhu, Jia

2015-09-09

Silicon, one of the most promising candidates as lithium-ion battery anode, has attracted much attention due to its high theoretical capacity, abundant existence, and mature infrastructure. Recently, Si nanostructures-based lithium-ion battery anode, with sophisticated structure designs and process development, has made significant progress. However, low cost and scalable processes to produce these Si nanostructures remained as a challenge, which limits the widespread applications. Herein, we demonstrate that Si nanoparticles with controlled size can be massively produced directly from low grade Si sources through a scalable high energy mechanical milling process. In addition, we systematically studied Si nanoparticles produced from two major low grade Si sources, metallurgical silicon (∼99 wt % Si, $1/kg) and ferrosilicon (∼83 wt % Si, $0.6/kg). It is found that nanoparticles produced from ferrosilicon sources contain FeSi2, which can serve as a buffer layer to alleviate the mechanical fractures of volume expansion, whereas nanoparticles from metallurgical Si sources have higher capacity and better kinetic properties because of higher purity and better electronic transport properties. Ferrosilicon nanoparticles and metallurgical Si nanoparticles demonstrate over 100 stable deep cycling after carbon coating with the reversible capacities of 1360 mAh g(-1) and 1205 mAh g(-1), respectively. Therefore, our approach provides a new strategy for cost-effective, energy-efficient, large scale synthesis of functional Si electrode materials.

Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

OpenAIRE

K?nig, Dirk; Hiller, Daniel; Gutsch, Sebastian; Zacharias, Margit; Smith, Sean

2017-01-01

All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusi...

Optical property of silicon quantum dots embedded in silicon nitride by thermal annealing

Energy Technology Data Exchange (ETDEWEB)

Kim, Baek Hyun, E-mail: bhkim@andrew.cmu.ed [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates (United States); Davis, Robert F. [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates (United States); Park, Seong-Ju [Nanophotonic Semiconductors Laboratory, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 500-712 (Korea, Republic of)

2010-01-01

We present the effects on the thermal annealing of silicon quantum dots (Si QDs) embedded in silicon nitride. The improved photoluminescence (PL) intensities and the red-shifted PL spectra were obtained with annealing treatment in the range of 700 to 1000 {sup o}C. The shifts of PL spectra were attributed to the increase in the size of Si QDs. The improvement of the PL intensities was also attributed to the reduction of point defects at Si QD/silicon nitride interface and in the silicon nitride due to hydrogen passivation effects.

Silicon photonics fundamentals and devices

CERN Document Server

Deen, M Jamal

2012-01-01

The creation of affordable high speed optical communications using standard semiconductor manufacturing technology is a principal aim of silicon photonics research. This would involve replacing copper connections with optical fibres or waveguides, and electrons with photons. With applications such as telecommunications and information processing, light detection, spectroscopy, holography and robotics, silicon photonics has the potential to revolutionise electronic-only systems. Providing an overview of the physics, technology and device operation of photonic devices using exclusively silicon and related alloys, the book includes: * Basic Properties of Silicon * Quantum Wells, Wires, Dots and Superlattices * Absorption Processes in Semiconductors * Light Emitters in Silicon * Photodetectors , Photodiodes and Phototransistors * Raman Lasers including Raman Scattering * Guided Lightwaves * Planar Waveguide Devices * Fabrication Techniques and Material Systems Silicon Photonics: Fundamentals and Devices outlines ...

Twenty-fold plasmon-induced enhancement of radiative emission rate in silicon nanocrystals embedded in silicon dioxide

International Nuclear Information System (INIS)

Gardelis, S; Gianneta, V.; Nassiopoulou, A.G

2016-01-01

We report on a 20-fold enhancement of the integrated photoluminescence (PL) emission of silicon nanocrystals, embedded in a matrix of silicon dioxide, induced by excited surface plasmons from silver nanoparticles, which are located in the vicinity of the silicon nanocrystals and separated from them by a silicon dioxide layer of a few nanometers. The electric field enhancement provided by the excited surface plasmons increases the absorption cross section and the emission rate of the nearby silicon nanocrystals, resulting in the observed enhancement of the photoluminescence, mainly attributed to a 20-fold enhancement in the emission rate of the silicon nanocrystals. The observed remarkable improvement of the PL emission makes silicon nanocrystals very useful material for photonic, sensor and solar cell applications.

Flexible Thermoelectric Generators on Silicon Fabric

KAUST Repository

Sevilla, Galo T.

2012-11-01

In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart textile, wearable electronics and many other exciting applications. However, low thermal budget processing and fundamentally limited electron mobility hinders its potential to be competitive with well established and highly developed silicon technology. The use of silicon in flexible electronics involve expensive and abrasive materials and processes. In this work, high performance flexible thermoelectric energy harvesters are demonstrated from low cost bulk silicon (100) wafers. The fabrication of the micro- harvesters was done using existing silicon processes on silicon (100) and then peeled them off from the original substrate leaving it for reuse. Peeled off silicon has 3.6% thickness of bulk silicon reducing the thermal loss significantly and generating nearly 30% more output power than unpeeled harvesters. The demonstrated generic batch processing shows a pragmatic way of peeling off a whole silicon circuitry after conventional fabrication on bulk silicon wafers for extremely deformable high performance integrated electronics. In summary, by using a novel, low cost process, this work has successfully integrated existing and highly developed fabrication techniques to introduce a flexible energy harvester for sustainable applications.

Subwavelength silicon photonics

International Nuclear Information System (INIS)

Cheben, P.; Bock, P.J.; Schmid, J.H.; Lapointe, J.; Janz, S.; Xu, D.-X.; Densmore, A.; Delage, A.; Lamontagne, B.; Florjanczyk, M.; Ma, R.

2011-01-01

With the goal of developing photonic components that are compatible with silicon microelectronic integrated circuits, silicon photonics has been the subject of intense research activity. Silicon is an excellent material for confining and manipulating light at the submicrometer scale. Silicon optoelectronic integrated devices have the potential to be miniaturized and mass-produced at affordable cost for many applications, including telecommunications, optical interconnects, medical screening, and biological and chemical sensing. We review recent advances in silicon photonics research at the National Research Council Canada. A new type of optical waveguide is presented, exploiting subwavelength grating (SWG) effect. We demonstrate subwavelength grating waveguides made of silicon, including practical components operating at telecom wavelengths: input couplers, waveguide crossings and spectrometer chips. SWG technique avoids loss and wavelength resonances due to diffraction effects and allows for single-mode operation with direct control of the mode confinement by changing the refractive index of a waveguide core over a range as broad as 1.6 - 3.5 simply by lithographic patterning. The light can be launched to these waveguides with a coupling loss as small as 0.5 dB and with minimal wavelength dependence, using coupling structures similar to that shown in Fig. 1. The subwavelength grating waveguides can cross each other with minimal loss and negligible crosstalk which allows massive photonic circuit connectivity to overcome the limits of electrical interconnects. These results suggest that the SWG waveguides could become key elements for future integrated photonic circuits. (authors)

Highly nonlinear sub-micron silicon nitride trench waveguide coated with gold nanoparticles

Science.gov (United States)

Huang, Yuewang; Zhao, Qiancheng; Sharac, Nicholas; Ragan, Regina; Boyraz, Ozdal

2015-05-01

We demonstrate the fabrication of a highly nonlinear sub-micron silicon nitride trench waveguide coated with gold nanoparticles for plasmonic enhancement. The average enhancement effect is evaluated by measuring the spectral broadening effect caused by self-phase-modulation. The nonlinear refractive index n2 was measured to be 7.0917×10-19 m2/W for a waveguide whose Wopen is 5 μm. Several waveguides at different locations on one wafer were measured in order to take the randomness of the nanoparticle distribution into consideration. The largest enhancement is measured to be as high as 10 times. Fabrication of this waveguide started with a MEMS grade photomask. By using conventional optical lithography, the wide linewidth was transferred to a wafer. Then the wafer was etched anisotropically by potassium hydroxide (KOH) to engrave trapezoidal trenches with an angle of 54.7º. Side wall roughness was mitigated by KOH etching and thermal oxidation that was used to generate a buffer layer for silicon nitride waveguide. The guiding material silicon nitride was then deposited by low pressure chemical vapor deposition. The waveguide was then patterned with a chemical template, with 20 nm gold particles being chemically attached to the functionalized poly(methyl methacrylate) domains. Since the particles attached only to the PMMA domains, they were confined to localized regions, therefore forcing the nanoparticles into clusters of various numbers and geometries. Experiments reveal that the waveguide has negligible nonlinear absorption loss, and its nonlinear refractive index can be greatly enhanced by gold nano clusters. The silicon nitride trench waveguide has large nonlinear refractive index, rendering itself promising for nonlinear applications.

Silicon photonic integration in telecommunications

Directory of Open Access Journals (Sweden)

Christopher Richard Doerr

2015-08-01

Full Text Available Silicon photonics is the guiding of light in a planar arrangement of silicon-based materials to perform various functions. We focus here on the use of silicon photonics to create transmitters and receivers for fiber-optic telecommunications. As the need to squeeze more transmission into a given bandwidth, a given footprint, and a given cost increases, silicon photonics makes more and more economic sense.

Silicon microphones - a Danish perspective

DEFF Research Database (Denmark)

Bouwstra, Siebe; Storgaard-Larsen, Torben; Scheeper, Patrick

1998-01-01

Two application areas of microphones are discussed, those for precision measurement and those for hearing instruments. Silicon microphones are under investigation for both areas, and Danish industry plays a key role in both. The opportunities of silicon, as well as the challenges and expectations......, are discussed. For precision measurement the challenge for silicon is large, while for hearing instruments silicon seems to be very promising....

Integrated silicon optoelectronics

CERN Document Server

Zimmermann, Horst

2000-01-01

'Integrated Silicon Optoelectronics'assembles optoelectronics and microelectronics The book concentrates on silicon as the major basis of modern semiconductor devices and circuits Starting from the basics of optical emission and absorption and from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included The book, furthermore, contains a review of the state of research on eagerly expected silicon light emitters In order to cover the topic of the book comprehensively, integrated waveguides, gratings, and optoelectronic power devices are included in addition Numerous elaborate illustrations promote an easy comprehension 'Integrated Silicon Optoelectronics'will be of value to engineers, physicists, and scientists in industry and at universities The book is also recommendable for graduate students speciali...

Silicon etch process

International Nuclear Information System (INIS)

Day, D.J.; White, J.C.

1984-01-01

A silicon etch process wherein an area of silicon crystal surface is passivated by radiation damage and non-planar structure produced by subsequent anisotropic etching. The surface may be passivated by exposure to an energetic particle flux - for example an ion beam from an arsenic, boron, phosphorus, silicon or hydrogen source, or an electron beam. Radiation damage may be used for pattern definition and/or as an etch stop. Ethylenediamine pyrocatechol or aqueous potassium hydroxide anisotropic etchants may be used. The radiation damage may be removed after etching by thermal annealing. (author)

Phase I study of vorinostat in combination with temozolomide in patients with high-grade gliomas: North American Brain Tumor Consortium Study 04-03.

Science.gov (United States)

Lee, Eudocia Q; Puduvalli, Vinay K; Reid, Joel M; Kuhn, John G; Lamborn, Kathleen R; Cloughesy, Timothy F; Chang, Susan M; Drappatz, Jan; Yung, W K Alfred; Gilbert, Mark R; Robins, H Ian; Lieberman, Frank S; Lassman, Andrew B; McGovern, Renee M; Xu, Jihong; Desideri, Serena; Ye, Xiabu; Ames, Matthew M; Espinoza-Delgado, Igor; Prados, Michael D; Wen, Patrick Y

2012-11-01

A phase I, dose-finding study of vorinostat in combination with temozolomide (TMZ) was conducted to determine the maximum tolerated dose (MTD), safety, and pharmacokinetics in patients with high-grade glioma (HGG). This phase I, dose-finding, investigational study was conducted in two parts. Part 1 was a dose-escalation study of vorinostat in combination with TMZ 150 mg/m(2)/day for 5 days every 28 days. Part 2 was a dose-escalation study of vorinostat in combination with TMZ 150 mg/m(2)/day for 5 days of the first cycle and 200 mg/m(2)/day for 5 days of the subsequent 28-day cycles. In part 1, the MTD of vorinostat administered on days 1 to 7 and 15 to 21 of every 28-day cycle, in combination with TMZ, was 500 mg daily. Dose-limiting toxicities (DLT) included grade 3 anorexia, grade 3 ALT, and grade 5 hemorrhage in the setting of grade 4 thrombocytopenia. In part 2, the MTD of vorinostat on days 1 to 7 and 15 to 21 of every 28-day cycle, combined with TMZ, was 400 mg daily. No DLTs were encountered, but vorinostat dosing could not be escalated further due to thrombocytopenia. The most common serious adverse events were fatigue, lymphopenia, thrombocytopenia, and thromboembolic events. There were no apparent pharmacokinetic interactions between vorinostat and TMZ. Vorinostat treatment resulted in hyperacetylation of histones H3 and H4 in peripheral mononuclear cells. Vorinostat in combination with temozolomide is well tolerated in patients with HGG. A phase I/II trial of vorinostat with radiotherapy and concomitant TMZ in newly diagnosed glioblastoma is underway. ©2012 AACR.

Investigation of the interface region between a porous silicon layer and a silicon substrate

International Nuclear Information System (INIS)

Lee, Ki-Won; Park, Dae-Kyu; Kim, Young-You; Shin, Hyun-Joon

2005-01-01

Atomic force microscopy (AFM) measurement and X-ray diffraction (XRD) analysis were performed to investigate the physical and structural characteristics of the interface region between a porous silicon layer and a silicon substrate. We discovered that, when anodization time was increased under a constant current density, the Si crystallites in the interface region became larger and formed different lattice parameters than observed in the porous silicon layer. Secondary ion mass spectrometry (SIMS) analysis also revealed that the Si was more concentrated in the interface region than in the porous silicon layer. These results were interpreted by the deficiency of the HF solution in reaching to the interface through the pores during the porous silicon formation

Study of boron detection limit using the in-air PIGE set-up at LAMFI-USP

International Nuclear Information System (INIS)

Moro, M. V.; Silva, T. F.; Trindade, G. F.; Added, N.; Tabacniks, M. H.

2014-01-01

The quantification of small amounts of boron in materials is of extreme importance in different areas of materials science. Boron is an important contaminant and also a silicon dopant in the semiconductor industry. Boron is also extensively used in nuclear power plants, either for neutron shielding or for safety control and boron is an essential nutrient for life, either vegetable or animal. The production of silicon solar cells, by refining metallurgical-grade silicon (MG-Si) requires the control and reduction of several silicon contaminants to very low concentration levels. Boron is one of the contaminants of solar-grade silicon (SG-Si) that must be controlled and quantified at sub-ppm levels. In the metallurgical purification, boron quantification is usually made by Inductive Coupled Plasma Mass Spectrometry, (ICP-MS) but the results need to be verified by an independent analytical method. In this work we present the results of the analysis of silicon samples by Particle Induced Gamma-Ray Emission (PIGE) aiming the quantification of low concentrations of boron. PIGE analysis was carried out using the in-air external beam line of the Laboratory for Materials Analysis with Ion Beams (LAMFI-USP) by the 10 B(p,αγ( 7 Be nuclear reaction, and measuring the 429 keV γ-ray. The in-air PIGE measurements at LAMFI have a quantification limit of the order of 10 16 at/cm 2

Study of boron detection limit using the in-air PIGE set-up at LAMFI-USP

Science.gov (United States)

Moro, M. V.; Silva, T. F.; Trindade, G. F.; Added, N.; Tabacniks, M. H.

2014-11-01

The quantification of small amounts of boron in materials is of extreme importance in different areas of materials science. Boron is an important contaminant and also a silicon dopant in the semiconductor industry. Boron is also extensively used in nuclear power plants, either for neutron shielding or for safety control and boron is an essential nutrient for life, either vegetable or animal. The production of silicon solar cells, by refining metallurgical-grade silicon (MG-Si) requires the control and reduction of several silicon contaminants to very low concentration levels. Boron is one of the contaminants of solar-grade silicon (SG-Si) that must be controlled and quantified at sub-ppm levels. In the metallurgical purification, boron quantification is usually made by Inductive Coupled Plasma Mass Spectrometry, (ICP-MS) but the results need to be verified by an independent analytical method. In this work we present the results of the analysis of silicon samples by Particle Induced Gamma-Ray Emission (PIGE) aiming the quantification of low concentrations of boron. PIGE analysis was carried out using the in-air external beam line of the Laboratory for Materials Analysis with Ion Beans (LAMFI-USP) by the 10B ( p ,αγ(7Be nuclear reaction, and measuring the 429 keV γ-ray. The in-air PIGE measurements at LAMFI have a quantification limit of the order of 1016 at/cm2.

Vapor Pressure and Evaporation Coefficient of Silicon Monoxide over a Mixture of Silicon and Silica

Science.gov (United States)

Ferguson, Frank T.; Nuth, Joseph A., III

2012-01-01

The evaporation coefficient and equilibrium vapor pressure of silicon monoxide over a mixture of silicon and vitreous silica have been studied over the temperature range (1433 to 1608) K. The evaporation coefficient for this temperature range was (0.007 plus or minus 0.002) and is approximately an order of magnitude lower than the evaporation coefficient over amorphous silicon monoxide powder and in general agreement with previous measurements of this quantity. The enthalpy of reaction at 298.15 K for this reaction was calculated via second and third law analyses as (355 plus or minus 25) kJ per mol and (363.6 plus or minus 4.1) kJ per mol respectively. In comparison with previous work with the evaporation of amorphous silicon monoxide powder as well as other experimental measurements of the vapor pressure of silicon monoxide gas over mixtures of silicon and silica, these systems all tend to give similar equilibrium vapor pressures when the evaporation coefficient is correctly taken into account. This provides further evidence that amorphous silicon monoxide is an intimate mixture of small domains of silicon and silica and not strictly a true compound.

High temperature corrosion of silicon carbide and silicon nitride in the presence of chloride compound

International Nuclear Information System (INIS)

McNallan, M.

1993-01-01

Silicon carbide and silicon nitride are resistant to oxidation because a protective silicon dioxide films on their surfaces in most oxidizing environments. Chloride compounds can attack the surface in two ways: 1) chlorine can attack the silicon directly to form a volatile silicon chloride compound or 2) alkali compounds combined with the chlorine can be transported to the surface where they flux the silica layer by forming stable alkali silicates. Alkali halides have enough vapor pressure that a sufficient quantity of alkali species to cause accelerated corrosion can be transported to the ceramic surface without the formation of a chloride deposit. When silicon carbide is attacked simultaneously by chlorine and oxygen, the corrosion products include both volatile and condensed spices. Silicon nitride is much more resistance to this type of attack than silicon carbide. Silicon based ceramics are exposed to oxidizing gases in the presence of alkali chloride vapors, the rate of corrosion is controlled primarily by the driving force for the formation of alkali silicate, which can be quantified as the activity of the alkali oxide in equilibrium with the corrosive gas mixture. In a gas mixture containing a fixed partial pressure of KCl, the rate of corrosion is accelerated by increasing the concentration of water vapor and inhibited by increasing the concentration of HCl. Similar results have been obtained for mixtures containing other alkalis and halogens. (Orig./A.B.)

Peripheral blood picture changes induced by chronic radone and silicon dioxide treatment (in combination or separately)

International Nuclear Information System (INIS)

Ivanov, Z.; Dermendzhiev, Kh.; Nikolova, M.

1975-01-01

Peripheral blood changes have been studied in rats after the following treatments: 4 hours daily for six months with a radon concentration of 1.10 -10 Ci/1 (group I), 1.10 -12 Ci/1 (group II) 50 mg pure silicon dioxide in 1 ml physiological solution (group III), and intratracheal incorporation of radon concentration in air of 1.10 -10 Ci/1 and silicon dioxide (group IV). Examinations during the third and sixth month after the start of experiment showed development of leukopenia in groups I, III and IV; lymphopenia was established in groups I and IV, and lymphocytosis in group III. Atypical morphological changes were observed in red blood cells. (A.B.)

RBS/channeling analysis of hydrogen-implanted single crystals of FZ silicon and 6H silicon

International Nuclear Information System (INIS)

Irwin, R.B.

1984-01-01

Single crystals of FZ silicon and 6H silicon carbide were implanted with hydrogen ions (50 and 80 keV, respectively) to fluences from 2 x 10 16 H + /cm 2 to 2 x 10 18 H+/cm 2 . The implantations were carried out at three temperatures: approx.95K, 300 K, and approx.800 K. Swelling of the samples was measured by surface profilometry. RBS/channeling was used to obtain the damage profiles and to determine the amount of hydrogen retained in the lattice. The damage profiles are centered around X/sub m/ for the implants into silicon and around R/sub p/ for silicon carbide. For silicon carbide implanted at 95 K and 300 K and for silicon implanted at 95 K, the peak damage region is amorphous for fluences above 8 x 10 16 H + /cm 2 , 4 x 10 17 H + /cm 2 , and 2 x 10 17 H + /cm 2 , respectively. Silicon implanted at 300 and 800 K and silicon carbide implanted at 800 K remain crystalline up to fluences of 1 x 10 18 H + /cm 2 . The channeling damage results agree with previously reported TEM and electron diffraction data. The predictions of a simple disorder-accumulation model with a linear annealing term explains qualitatively the observed damage profiles in silicon carbide. Quantitatively, however, the model predicts faster development of the damage profiles than is observed at low fluences in both silicon and silicon carbide. For samples implanted at 300 and 800 K, the model also predicts substantially less peak disorder than is observed. The effect of the surface, the retained hydrogen, the shape of S/sub D/(X), and the need for a nonlinear annealing term may be responsible for the discrepancy

Quantum mechanical theory of epitaxial transformation of silicon to silicon carbide

International Nuclear Information System (INIS)

Kukushkin, S A; Osipov, A V

2017-01-01

The paper focuses on the study of transformation of silicon crystal into silicon carbide crystal via substitution reaction with carbon monoxide gas. As an example, the Si(1 0 0) surface is considered. The cross section of the potential energy surface of the first stage of transformation along the reaction pathway is calculated by the method of nudged elastic bands. It is found that in addition to intermediate states associated with adsorption of CO and SiO molecules on the surface, there is also an intermediate state in which all the atoms are strongly bonded to each other. This intermediate state significantly reduces the activation barrier of transformation down to 2.6 eV. The single imaginary frequencies corresponding to the two transition states of this transformation are calculated, one of which is reactant-like, whereas the other is product-like. By methods of quantum chemistry of solids, the second stage of this transformation is described, namely, the transformation of precarbide silicon into silicon carbide. Energy reduction per one cell is calculated for this ‘collapse’ process, and bond breaking energy is also found. Hence, it is concluded that the smallest size of the collapsing islet is 30 nm. It is shown that the chemical bonds of the initial silicon crystal are coordinately replaced by the bonds between Si and C in silicon carbide, which leads to a high quality of epitaxy and a low concentration of misfit dislocations. (paper)

Silicon Nanocrystal Synthesis in Microplasma Reactor

Science.gov (United States)

Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

Nanocrystalline silicon particles with grains smaller than 5 nm are widely recognized as a key material in optoelectronic devices, lithium battery electrodes, and bio-medical labels. Another important characteristic is that silicon is an environmentally safe material that is used in numerous silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma-enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. In this study, we explore the possibility of microplasma technologies for efficient production of mono-dispersed nanocrystalline silicon particles on a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using a very-high-frequency (144 MHz) power source in a capillary glass tube with volume of less than 1 μl. Fundamental plasma parameters of the microplasma were characterized using optical emission spectroscopy, which respectively indicated electron density of 1015 cm-3, argon excitation temperature of 5000 K, and rotational temperature of 1500 K. Such high-density non-thermal reactive plasma can decompose silicon tetrachloride into atomic silicon to produce supersaturated silicon vapor, followed by gas-phase nucleation via three-body collision: particle synthesis in high-density plasma media is beneficial for promoting nucleation processes. In addition, further growth of silicon nuclei can be terminated in a short-residence-time reactor. Micro-Raman scattering spectra showed that as-deposited particles are mostly amorphous silicon with a small fraction of silicon nanocrystals. Transmission electron micrography confirmed individual 3-15 nm silicon nanocrystals. Although particles were not mono-dispersed, they were well separated and not coagulated.

Nanostructured silicon for thermoelectric

Science.gov (United States)

Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

2011-06-01

Thermoelectric modules convert thermal energy into electrical energy and vice versa. At present bismuth telluride is the most widely commercial used material for thermoelectric energy conversion. There are many applications where bismuth telluride modules are installed, mainly for refrigeration. However, bismuth telluride as material for energy generation in large scale has some disadvantages. Its availability is limited, it is hot stable at higher temperatures (>250°C) and manufacturing cost is relatively high. An alternative material for energy conversion in the future could be silicon. The technological processing of silicon is well advanced due to the rapid development of microelectronics in recent years. Silicon is largely available and environmentally friendly. The operating temperature of silicon thermoelectric generators can be much higher than of bismuth telluride. Today silicon is rarely used as a thermoelectric material because of its high thermal conductivity. In order to use silicon as an efficient thermoelectric material, it is necessary to reduce its thermal conductivity, while maintaining high electrical conductivity and high Seebeck coefficient. This can be done by nanostructuring into arrays of pillars. Fabrication of silicon pillars using ICP-cryogenic dry etching (Inductive Coupled Plasma) will be described. Their uniform height of the pillars allows simultaneous connecting of all pillars of an array. The pillars have diameters down to 180 nm and their height was selected between 1 micron and 10 microns. Measurement of electrical resistance of single silicon pillars will be presented which is done in a scanning electron microscope (SEM) equipped with nanomanipulators. Furthermore, measurement of thermal conductivity of single pillars with different diameters using the 3ω method will be shown.

Studies on the reactive melt infiltration of silicon and silicon-molybdenum alloys in porous carbon

Science.gov (United States)

Singh, M.; Behrendt, D. R.

1992-01-01

Investigations on the reactive melt infiltration of silicon and silicon-1.7 and 3.2 at percent molybdenum alloys into porous carbon preforms have been carried out by process modeling, differential thermal analysis (DTA) and melt infiltration experiments. These results indicate that the initial pore volume fraction of the porous carbon preform is a critical parameter in determining the final composition of the raction-formed silicon carbide and other residual phases. The pore size of the carbon preform is very detrimental to the exotherm temperatures due to liquid silicon-carbon reactions encountered during the reactive melt infiltration process. A possible mechanism for the liquid silicon-porous (glassy) carbon reaction has been proposed. The composition and microstructure of the reaction-formed silicon carbide has been discussed in terms of carbon preform microstructures, infiltration materials, and temperatures.

1366 Project Silicon: Reclaiming US Silicon PV Leadership

Energy Technology Data Exchange (ETDEWEB)

Lorenz, Adam [1366 Technologies, Bedford, MA (United States)

2016-02-16

1366 Technologies’ Project Silicon addresses two of the major goals of the DOE’s PV Manufacturing Initiative Part 2 program: 1) How to reclaim a strong silicon PV manufacturing presence and; 2) How to lower the levelized cost of electricity (“LCOE”) for solar to $0.05-$0.07/kWh, enabling wide-scale U.S. market adoption. To achieve these two goals, US companies must commercialize disruptive, high-value technologies that are capable of rapid scaling, defensible from foreign competition, and suited for US manufacturing. These are the aims of 1366 Technologies Direct Wafer ™ process. The research conducted during Project Silicon led to the first industrial scaling of 1366’s Direct Wafer™ process – an innovative, US-friendly (efficient, low-labor content) manufacturing process that destroys the main cost barrier limiting silicon PV cost-reductions: the 35-year-old grand challenge of making quality wafers (40% of the cost of modules) without the cost and waste of sawing. The SunPath program made it possible for 1366 Technologies to build its demonstration factory, a key and critical step in the Company’s evolution. The demonstration factory allowed 1366 to build every step of the process flow at production size, eliminating potential risk and ensuring the success of the Company’s subsequent scaling for a 1 GW factory to be constructed in Western New York in 2016 and 2017. Moreover, the commercial viability of the Direct Wafer process and its resulting wafers were established as 1366 formed key strategic partnerships, gained entry into the $8B/year multi-Si wafer market, and installed modules featuring Direct Wafer products – the veritable proving grounds for the technology. The program also contributed to the development of three Generation 3 Direct Wafer furnaces. These furnaces are the platform for copying intelligently and preparing our supply chain – large-scale expansion will not require a bigger machine but more machines. SunPath filled the

Bioavailability of everolimus administered as a single 5 mg tablet versus five 1 mg tablets: a randomized, open-label, two-way crossover study of healthy volunteers.

Science.gov (United States)

Thudium, Karen; Gallo, Jorge; Bouillaud, Emmanuel; Sachs, Carolin; Eddy, Simantini; Cheung, Wing

2015-01-01

The mammalian target of rapamycin (mTOR) inhibitor everolimus has a well-established pharmacokinetics profile. We conducted a randomized, single-center, open-label, two-sequence, two-period crossover study of healthy volunteers to assess the relative bioavailability of everolimus administered as one 5 mg tablet or five 1 mg tablets. Subjects were randomized 1:1 to receive everolimus dosed as one 5 mg tablet or as five 1 mg tablets on day 1, followed by a washout period on days 8-14 and then the opposite formulation on day 15. Blood sampling for pharmacokinetic evaluation was performed at prespecified time points, with 17 samples taken for each treatment period. Primary variables for evaluation of relative bioavailability were area under the concentration-time curve from time zero to infinity (AUCinf) and maximum blood concentration (Cmax). Safety was assessed by reporting the incidence of adverse events (AEs). Twenty-two participants received everolimus as one 5 mg tablet followed by five 1 mg tablets (n=11) or the opposite sequence (n=11). The Cmax of five 1 mg tablets was 48% higher than that of one 5 mg tablet (geometric mean ratio, 1.48; 90% confidence interval [CI], 1.35-1.62). AUCinf was similar (geometric mean ratio, 1.08; 90% CI, 1.02-1.16), as were the extent of absorption and the distribution and elimination kinetics. AEs, all grade 1 or 2, were observed in 54.5% of subjects. Although the extent of absorption was similar, the Cmax of five 1 mg tablets was higher than that of one 5 mg tablet, suggesting these formulations lead to different peak blood concentrations and are not interchangeable at the dose tested.

Silicon-micromachined microchannel plates

CERN Document Server

Beetz, C P; Steinbeck, J; Lemieux, B; Winn, D R

2000-01-01

Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of approx 0.5 to approx 25 mu m, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposite...

Measurement and analysis of quadruple (αγγ) angular correlations for high spin states of 24Mg

International Nuclear Information System (INIS)

Wiedenhoever, I.; Wuosmaa, A. H.; Lister, C. J.; Carpenter, M. P.; Janssens, R. V. F.; Amro, H.; Caggiano, J.; Heinz, A.; Kondev, F. G.; Lauritsen, T.; Siem, S.; Sonzogni, A.; Bhattacharyya, P.; Devlin, M.; Sarantites, D. G.; Sobotka, L. G.

2000-01-01

The high-lying, α-decaying states in 24 Mg have been studied by measuring the complete decay path of α and γ emissions using five segmented Silicon detectors in conjunction with GAMMASPHERE. The authors analyzed the (αγ) triple angular correlations and, for the first time, (αγγ) quadruple correlations. The data analysis is based on a new Fourier transformation technique. The power of the technique is demonstrated

Porous silicon carbide (SIC) semiconductor device

Science.gov (United States)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1996-01-01

Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

Silicon Photonics Cloud (SiCloud)

DEFF Research Database (Denmark)

DeVore, P. T. S.; Jiang, Y.; Lynch, M.

2015-01-01

Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths.......Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths....

[Silicone breast prosthesis and rheumatoid arthritis: a new systemic disease: siliconosis. A case report and a critical review of the literature].

Science.gov (United States)

Iannello, S; Belfiore, F

1998-04-01

Today the number of women receiving breast implants of silicone gel, for augmentation or reconstruction of the breast, is increasing. Silicon implants may cause local complications (such as capsular contracture, rupture, closed capsulotomy, gel "bleed", nodular foreign body granulomas in the capsular tissue and lymph nodes) or general symptoms. An adverse immune reaction with signs and symptoms of rheumatoid disorders is also possible, although an increased frequency of true autoimmune systemic connective tissue diseases is controversial. The US Food and Drug Administration advised that these silicone implants should be used only in reconstructive surgery and as part of clinical trials. Silicone is not an inert substance and silicone compounds were found in the blood and liver of women with silicone breast implants. The development of disease related to silicone implants would depend on genetic factors, so that only a very few women are potentially at risk. HLA-DR53 may be a marker of predisposed subjects. Breast-feeding by women with silicone implants should not be recommended for possible autoimmune disorders in the children. We report the case of an adult female patient with silicone breast implantation for bilateral mastectomy (performed 12 months before) and a unique syndrome characterized by low-grade fever, chronic fatigue, arthralgias of the hands, dysphagia, dry eye, increased level of rheumatoid factor and decreased value of complement C3 and C4. No increased erythrocyte sedimentation rate occurred, and no ANA, nDNA, ENA and AAT autoantibodies were evidence. A critical review of literature (source: MEDLINE 1980-1997) was performed and our case seems to be the first one reported in Italy. The internist should become familiar with the immunological disorders related to silicone breast implants, often so marked to require the explantation of the prostheses to improve symptomatology. However, perhaps due to the leak and spreading of silicone, the progression

Evaluation of Schottky and MgO-based tunnelling diodes with different ferromagnets for spin injection in n-Si

International Nuclear Information System (INIS)

Uhrmann, T; Dimopoulos, T; Brueckl, H; Kovacs, A; Kohn, A; Weyers, S; Paschen, U; Smoliner, J

2009-01-01

In this work we present the electrical properties of sputter-deposited ferromagnetic (FM) Schottky diodes and MgO-based tunnelling diodes to n-doped (0 0 1) silicon. The effective Schottky barrier height (SBH) has been evaluated as a function of the FM electrode (Co 70 Fe 30 , Co 40 Fe 40 B 20 and Ni 80 Fe 20 ), the silicon doping density (10 15 to 10 18 cm -3 ), the MgO tunnelling barrier thickness (0, 1.5 and 2.5 nm) and post-deposition annealing up to 400 0 C. The ideality factors of the Schottky diodes are close to unity, indicating transport by thermionic emission and the absence of an interfacial oxide layer, which is confirmed by transmission electron microscopy. The effective SBH is found to be approximately 0.65 eV, independent of the FM material and decreasing with increasing doping density. The changes induced by high temperature annealing at the current-voltage characteristic of the Schottky diodes depend strongly on the FM electrode. The effective SBH for the tunnelling diodes is as low as 0.3 eV, which suggests a high density of oxide and interface traps. It is again independent of the FM electrode, decreasing with increasing doping density and annealing temperature. The inclusion of MgO leads to higher thermal stability of the tunnelling diodes. The measured contact resistance values are discussed with respect to the conductivity mismatch for spin injection and detection.

Influence of the Sr and Mg Alloying Additions on the Bonding Between Matrix and Reinforcing Particles in the AlSi7Mg/SiC-Cg Hybrid Composite

Directory of Open Access Journals (Sweden)

Dolata A. J.

2016-06-01

Full Text Available The aim of the work was to perform adequate selection of the phase composition of the composite designated for permanent - mould casting air compressor pistons. The hybrid composites based on AlSi7Mg matrix alloy reinforced with mixture of silicon carbide (SiC and glassy carbon (Cg particles were fabricated by the stir casting method. It has been shown that the proper selection of chemical composition of matrix alloy and its modification by used magnesium and strontium additions gives possibility to obtain both the advantageous casting properties of composite suspensions as well as good bonding between particles reinforcements and matrix.

Effects of human food grade titanium dioxide nanoparticle dietary exposure on Drosophila melanogaster survival, fecundity, pupation and expression of antioxidant genes.

Science.gov (United States)

Jovanović, Boris; Cvetković, Vladimir J; Mitrović, Tatjana Lj

2016-02-01

The fruitfly, Drosophila melanogaster was exposed to the human food grade of E171 titanium dioxide (TiO2). This is a special grade of TiO2 which is frequently omitted in nanotoxicology studies dealing with TiO2, yet it is the most relevant grade regarding oral exposure of humans. D. melanogaster larvae were exposed to 0.002 mg mL(-1), 0.02 mg mL(-1), 0.2 mg mL(-1), and 2 mg mL(-1) of TiO2 in feeding medium, and the survival, fecundity, pupation time, and expression of genes involved in oxidative stress response were monitored. TiO2 did not affect survival but significantly increased time to pupation (p TiO2 was present in a significant amount in larvae, but was not transferred to adults during metamorphosis. Two individuals with aberrant phenotype similar to previously described gold nanoparticles induced mutant phenotypes were detected in the group exposed to TiO2. In general, TiO2 showed little toxicity toward D. melanogaster at concentrations relevant to oral exposure of humans. Copyright © 2015 Elsevier Ltd. All rights reserved.

The silicon-silicon oxide multilayers utilization as intrinsic layer on pin solar cells

International Nuclear Information System (INIS)

Colder, H.; Marie, P.; Gourbilleau, F.

2008-01-01

Silicon nanostructures are promising candidate for the intrinsic layer on pin solar cells. In this work we report on new material: silicon-rich silicon oxide (SRSO) deposited by reactive magnetron sputtering of a pure silica target and an interesting structure: multilayers consisting of a stack of SRSO and pure silicon oxide layers. Two thicknesses of the SRSO sublayer, t SRSO , are studied 3 nm and 5 nm whereas the thickness of silica sublayer is maintaining at 3 nm. The presence of nanocrystallites of silicon, evidenced by X-Ray diffraction (XRD), leads to photoluminescence (PL) emission at room temperature due to the quantum confinement of the carriers. The PL peak shifts from 1.3 eV to 1.5 eV is correlated to the decreasing of t SRSO from 5 nm down to 3 nm. In the purpose of their potential utilization for i-layer, the optical properties are studied by absorption spectroscopy. The achievement a such structures at promising absorption properties. Moreover by favouring the carriers injection by the tunnel effect between silicon nanograins and silica sublayers, the multilayers seem to be interesting for solar cells

The Influence of Silicon and Multinutrient Fertilizer On the Quality and Chemical Composition of Gazania Rigens ‘Kiss Yellow’, Salvia Farinacea ‘Fairy Queen’ and Verbena ‘Obsession Lilac’ Plants

Directory of Open Access Journals (Sweden)

Dębicz Regina

2017-06-01

Full Text Available Silicon supplementation may lead to positive changes in plant quality, including their appearance. The two-factorial experiment with three ornamental plant taxa Gazania rigens ‘Kiss Yellow’, Salvia farinacea ‘Fairy Queen’ and Verbena ‘Obsession Lilac’ was conducted in the years 2012-2013. The first factor was foliar application of Si in form of ortho-silicic acid stabilized with choline (YaraVita Actisil at the concentrations of 60, 120 and 180 mg·dm-3, while the second was soil application of multinutrient fertilizer (Insol U at the concentrations of 0.25% and 0.50%. Biometric measurements of plants were carried out at the beginning of flowering. The laboratory analyses included the determination of the content of P, K, Ca, Mg and Si as well as chlorophyll content in the leaves. Silicon had a beneficial influence on a majority of the analysed morphological features. Plants reacted best to high silicon doses (120 and 180 mg·dm-3. Particularly beneficial effects were noted with respect to improved flowering of all analysed plant taxa and to the vegetative development of Salvia and Gazania. Insol U supplementation noticeably improved the flowering of Verbena.

Method of forming buried oxide layers in silicon

Science.gov (United States)

Sadana, Devendra Kumar; Holland, Orin Wayne

2000-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Raman spectroscopy for grading of live osteosarcoma cells.

Science.gov (United States)

Chiang, Yi-Hung; Wu, Stewart H; Kuo, Yi-Chun; Chen, How-Foo; Chiou, Arthur; Lee, Oscar K

2015-04-18

Osteosarcoma is the most common primary malignant bone tumor, and the grading of osteosarcoma cells relies on traditional histopathology and molecular biology methods, which require RNA extraction, protein isolation and immunohistological staining. All these methods require cell isolation, lysis or fixation, which is time-consuming and requires certain amount of tumor specimen. In this study, we report the use of Raman spectroscopy for grading of malignant osteosarcoma cells. We demonstrate that, based on the detection of differential production of mineral species, Raman spectroscopy can be used as a live cell analyzer to accurately assess the grades of osteosarcoma cells by evaluating their mineralization levels. Mineralization level was assessed by measuring amount of hydroxyapatite (HA), which is highly expressed in mature osteoblasts, but not in poorly differentiated osteosarcoma cell or mesenchymal stem cells, the putative cell-of-origin of osteosarcoma. We found that under Raman spectroscopy, the level of HA production was high in MG-63 cells, which are low-grade. Moreover, hydroxyapatite production was low in high-grade osteosarcoma cells such as 143B and SaOS2 cells (p Raman spectroscopy for the measurement of HA production by the protocol reported in this study may serve as a useful tool to rapidly and accurately assess the degree of malignancy in osteosarcoma cells in a label-free manner. Such application may shorten the period of pathological diagnosis and may benefit patients who are inflicted with osteosarcoma.

Effects of ion implantation on charges in the silicon--silicon dioxide system

International Nuclear Information System (INIS)

Learn, A.J.; Hess, D.W.

1977-01-01

Structures consisting of thermally grown oxide on silicon were implanted with boron, arsenic, or argon ions. For argon implantation through oxides, an increased fixed oxide charge (Q/sub ss/) was observed with the increase being greater for than for silicon. This effect is attributed to oxygen recoil which produces additional excess ionized silicon in the oxide of a type similar to that arising in thermal oxidation. Fast surface state (N/sub st/) generation was also noted which in most cases obscured the Q/sub ss/ increase. Of various heat treatments tested, only a 900 degreeC anneal in hydrogen annihilated N/sub st/ and allowed Q/sub ss/ measurement. Such N/sub st/ apparently arises as a consequence of implantation damage at the silicon--silicon dioxide interface. With the exception of boron implantations into thick oxides or through aluminum electrodes, reduction of the mobile ionic charge (Q/sub o/) was achieved by implantation. The reduction again is presumably damage related and is not negated by high-temperature annealing but may be counterbalanced by aluminum incorporation in the oxide

High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers

Energy Technology Data Exchange (ETDEWEB)

Antoniadis, H.

2011-03-01

Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

Silicon-micromachined microchannel plates

International Nuclear Information System (INIS)

Beetz, Charles P.; Boerstler, Robert; Steinbeck, John; Lemieux, Bryan; Winn, David R.

2000-01-01

Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of ∼0.5 to ∼25 μm, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposited or nucleated in the channels or the first strike surface. Results on resistivity, secondary emission and gain are presented

Silicon Tracking Upgrade at CDF

International Nuclear Information System (INIS)

Kruse, M.C.

1998-04-01

The Collider Detector at Fermilab (CDF) is scheduled to begin recording data from Run II of the Fermilab Tevatron in early 2000. The silicon tracking upgrade constitutes both the upgrade to the CDF silicon vertex detector (SVX II) and the new Intermediate Silicon Layers (ISL) located at radii just beyond the SVX II. Here we review the design and prototyping of all aspects of these detectors including mechanical design, data acquisition, and a trigger based on silicon tracking

Radiation Hardening of Silicon Detectors

CERN Multimedia

Leroy, C; Glaser, M

2002-01-01

%RD48 %title\\\\ \\\\Silicon detectors will be widely used in experiments at the CERN Large Hadron Collider where high radiation levels will cause significant bulk damage. In addition to increased leakage current and charge collection losses worsening the signal to noise, the induced radiation damage changes the effective doping concentration and represents the limiting factor to long term operation of silicon detectors. The objectives are to develop radiation hard silicon detectors that can operate beyond the limits of the present devices and that ensure guaranteed operation for the whole lifetime of the LHC experimental programme. Radiation induced defect modelling and experimental results show that the silicon radiation hardness depends on the atomic impurities present in the initial monocrystalline material.\\\\ \\\\ Float zone (FZ) silicon materials with addition of oxygen, carbon, nitrogen, germanium and tin were produced as well as epitaxial silicon materials with epilayers up to 200 $\\mu$m thickness. Their im...

Silicon Alloying On Aluminium Based Alloy Surface

International Nuclear Information System (INIS)

Suryanto

2002-01-01

Silicon alloying on surface of aluminium based alloy was carried out using electron beam. This is performed in order to enhance tribological properties of the alloy. Silicon is considered most important alloying element in aluminium alloy, particularly for tribological components. Prior to silicon alloying. aluminium substrate were painted with binder and silicon powder and dried in a furnace. Silicon alloying were carried out in a vacuum chamber. The Silicon alloyed materials were assessed using some techniques. The results show that silicon alloying formed a composite metal-non metal system in which silicon particles are dispersed in the alloyed layer. Silicon content in the alloyed layer is about 40% while in other place is only 10.5 %. The hardness of layer changes significantly. The wear properties of the alloying alloys increase. Silicon surface alloying also reduced the coefficient of friction for sliding against a hardened steel counter face, which could otherwise be higher because of the strong adhesion of aluminium to steel. The hardness of the silicon surface alloyed material dropped when it underwent a heating cycle similar to the ion coating process. Hence, silicon alloying is not a suitable choice for use as an intermediate layer for duplex treatment

Silicon microfabricated beam expander

Science.gov (United States)

Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

2015-03-01

The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

Silicon germanium as a novel mask for silicon deep reactive ion etching

KAUST Repository

Serry, Mohamed Y.

2013-10-01

This paper reports on the use of p-type polycrystalline silicon germanium (poly-Si1-xGex) thin films as a new masking material for the cryogenic deep reactive ion etching (DRIE) of silicon. We investigated the etching behavior of various poly-Si1-xGex:B (0silicon, silicon oxide, and photoresist was determined at different etching temperatures, ICP and RF powers, and SF6 to O2 ratios. The study demonstrates that the etching selectivity of the SiGe mask for silicon depends strongly on three factors: Ge content; boron concentration; and etching temperature. Compared to conventional SiO2 and SiN masks, the proposed SiGe masking material exhibited several advantages, including high etching selectivity to silicon (>1:800). Furthermore, the SiGe mask was etched in SF6/O2 plasma at temperatures ≥ - 80°C and at rates exceeding 8 μm/min (i.e., more than 37 times faster than SiO2 or SiN masks). Because of the chemical and thermodynamic stability of the SiGe film as well as the electronic properties of the mask, it was possible to deposit the proposed film at CMOS backend compatible temperatures. The paper also confirms that the mask can easily be dry-removed after the process with high etching-rate by controlling the ICP and RF power and the SF6 to O2 ratios, and without affecting the underlying silicon substrate. Using low ICP and RF power, elevated temperatures (i.e., > - 80°C), and an adjusted O2:SF6 ratio (i.e., ~6%), we were able to etch away the SiGe mask without adversely affecting the final profile. Ultimately, we were able to develop deep silicon- trenches with high aspect ratio etching straight profiles. © 1992-2012 IEEE.

Phase II study of Gleevec® plus hydroxyurea in adults with progressive or recurrent low-grade glioma1

Science.gov (United States)

Reardon, David A.; Desjardins, Annick; Vredenburgh, James J.; Herndon, James E.; Coan, April; Gururangan, Sridharan; Peters, Katherine B.; McLendon, Roger; Sathornsumetee, Sith; Rich, Jeremy N.; Lipp, Eric S.; Janney, Dorothea; Friedman, Henry S.

2013-01-01

Background We evaluated the efficacy of imatinib plus hydroxyurea in patients with progressive/recurrent low-grade glioma. Methods A total of 64 patients with recurrent/progressive low-grade glioma were enrolled in this single-center study that stratified patients into astrocytoma and oligodendroglioma cohorts. All patients received 500 mg of hydroxyurea twice a day. Imatinib was administered at 400 mg per day for patients not on EIAEDs and at 500 mg twice a day if on EIAEDs. The primary endpoint was progression-free survival at 12 months (PFS-12) and secondary endpoints were safety, median progression-free survival and radiographic response rate. Results Thirty-two patients were enrolled into each cohort. Eleven patients (17%) had prior radiotherapy and 24 (38%) had received prior chemotherapy. The median PFS and PFS-12 were 11 months and 39%, respectively. Outcome did not differ between the histologic cohorts. No patient achieved a radiographic response. The most common grade 3 or greater adverse events were neutropenia (11%), thrombocytopenia (3%) and diarrhea (3%). Conclusions Imatinib plus hydroxyurea was well tolerated among recurrent/progressive LGG patients but this regimen demonstrated negligible anti-tumor activity. PMID:22371319

Structural modification of silicon during the formation process of porous silicon

International Nuclear Information System (INIS)

Martin-Palma, R.J.; Pascual, L.; Landa-Canovas, A.R.; Herrero, P.; Martinez-Duart, J.M.

2005-01-01

Direct examination of porous silicon (PS) by the use of high resolution transmission electron microscopy (HRTEM) allowed us to perform a deep insight into the formation mechanisms of this material. In particular, the structure of the PS/Si interface and that of the silicon nanocrystals that compose porous silicon were analyzed in detail. Furthermore, image processing was used to study in detail the structure of PS. The mechanism of PS formation and lattice matching between the PS layer and the Si substrate is analyzed and discussed. Finally, a formation mechanism for PS based on the experimental observations is proposed

Thin film silicon on silicon nitride for radiation hardened dielectrically isolated MISFET's

International Nuclear Information System (INIS)

Neamen, D.; Shedd, W.; Buchanan, B.

1975-01-01

The permanent ionizing radiation effects resulting from charge trapping in a silicon nitride isolation dielectric have been determined for a total ionizing dose up to 10 7 rads (Si). Junction FET's, whose active channel region is directly adjacent to the silicon-silicon nitride interface, were used to measure the effects of the radiation induced charge trapping in the Si 3 N 4 isolation dielectric. The JFET saturation current and channel conductance versus junction gate voltage and substrate voltage were characterized as a function of the total ionizing radiation dose. The experimental results on the Si 3 N 4 are compared to results on similar devices with SiO 2 dielectric isolation. The ramifications of using the silicon nitride for fabricating radiation hardened dielectrically isolated MIS devices are discussed

The silicon vertex tracker for star and future applications of silicon drift detectors

International Nuclear Information System (INIS)

Bellwied, Rene

2001-01-01

The Silicon Vertex Tracker (SVT) for the STAR experiment at the Relativistic Heavy Ion Collider at Brookhaven National Laboratory has recently been completed and installed. First data were taken in July 2001. The SVT is based on a novel semi-conductor technology called Silicon Drift Detectors. 216 large area (6 by 6 cm) Silicon wafers were employed to build a three barrel device capable of vertexing and tracking in a high occupancy environment. Its intrinsic radiation hardness, its operation at room temperature and its excellent position resolution (better than 20 micron) in two dimensions with a one dimensional detector readout, make this technology very robust and inexpensive and thus a viable alternative to CCD, Silicon pixel and Silicon strip detectors in a variety of applications from fundamental research in high-energy and nuclear physics to astrophysics to medical imaging. I will describe the development that led to the STAR-SVT, its performance and possible applications for the near future

Optoelectronic enhancement of monocrystalline silicon solar cells by porous silicon-assisted mechanical grooving

Energy Technology Data Exchange (ETDEWEB)

Ben Rabha, Mohamed; Mohamed, Seifeddine Belhadj; Dimassi, Wissem; Gaidi, Mounir; Ezzaouia, Hatem; Bessais, Brahim [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

2011-03-15

One of the most important factors influencing silicon solar cells performances is the front side reflectivity. Consequently, new methods for efficient reduction of this reflectivity are searched. This has always been done by creating a rough surface that enables incident light of being absorbed within the solar cell. Combination of texturization-porous silicon surface treatment was found to be an attractive technical solution for lowering the reflectivity of monocrystalline silicon (c-Si). The texturization of the monocrystalline silicon wafer was carried out by means of mechanical grooving. A specific etching procedure was then applied to form a thin porous silicon layer enabling to remove mechanical damages. This simple and low cost method reduces the total reflectivity from 29% to 7% in the 300 - 950 nm wavelength range and enhances the diffusion length of the minority carriers from 100 {mu}m to 790 {mu}m (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

The dark side of silicon energy efficient computing in the dark silicon era

CERN Document Server

Liljeberg, Pasi; Hemani, Ahmed; Jantsch, Axel; Tenhunen, Hannu

2017-01-01

This book presents the state-of-the art of one of the main concerns with microprocessors today, a phenomenon known as "dark silicon". Readers will learn how power constraints (both leakage and dynamic power) limit the extent to which large portions of a chip can be powered up at a given time, i.e. how much actual performance and functionality the microprocessor can provide. The authors describe their research toward the future of microprocessor development in the dark silicon era, covering a variety of important aspects of dark silicon-aware architectures including design, management, reliability, and test. Readers will benefit from specific recommendations for mitigating the dark silicon phenomenon, including energy-efficient, dedicated solutions and technologies to maximize the utilization and reliability of microprocessors. Enables readers to understand the dark silicon phenomenon and why it has emerged, including detailed analysis of its impacts; Presents state-of-the-art research, as well as tools for mi...

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

KAUST Repository

Hussain, Muhammad Mustafa

2013-05-30

Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

KAUST Repository

Hussain, Muhammad Mustafa; Rojas, Jhonathan Prieto; Sevilla, Galo T.

2013-01-01

Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Colloidal characterization of silicon nitride and silicon carbide

Science.gov (United States)

Feke, Donald L.

1986-01-01

The colloidal behavior of aqueous ceramic slips strongly affects the forming and sintering behavior and the ultimate mechanical strength of the final ceramic product. The colloidal behavior of these materials, which is dominated by electrical interactions between the particles, is complex due to the strong interaction of the solids with the processing fluids. A surface titration methodology, modified to account for this interaction, was developed and used to provide fundamental insights into the interfacial chemistry of these systems. Various powder pretreatment strategies were explored to differentiate between true surface chemistry and artifacts due to exposure history. The colloidal behavior of both silicon nitride and carbide is dominated by silanol groups on the powder surfaces. However, the colloid chemistry of silicon nitride is apparently influenced by an additional amine group. With the proper powder treatments, silicon nitride and carbide powder can be made to appear colloidally equivalent. The impact of these results on processing control will be discussed.

Silicon-to-silicon wafer bonding using evaporated glass

DEFF Research Database (Denmark)

Weichel, Steen; Reus, Roger De; Lindahl, M.

1998-01-01

Anodic bending of silicon to silicon 4-in. wafers using an electron-beam evaporated glass (Schott 8329) was performed successfully in air at temperatures ranging from 200 degrees C to 450 degrees C. The composition of the deposited glass is enriched in sodium as compared to the target material....... The roughness of the as-deposited films was below 5 nm and was found to be unchanged by annealing at 500 degrees C for 1 h in air. No change in the macroscopic edge profiles of the glass film was found as a function of annealing; however, small extrusions appear when annealing above 450 degrees C. Annealing...... of silicon/glass structures in air around 340 degrees C for 15 min leads to stress-free structures. Bonded wafer pairs, however, show no reduction in stress and always exhibit compressive stress. The bond yield is larger than 95% for bonding temperatures around 350 degrees C and is above 80% for bonding...

Elite silicon and solar power

International Nuclear Information System (INIS)

Yasamanov, N.A.

2000-01-01

The article is of popular character, the following issues being considered: conversion of solar energy into electric one, solar batteries in space and on the Earth, growing of silicon large-size crystals, source material problems relating to silicon monocrystals production, outlooks of solar silicon batteries production [ru

Porous silicon: X-rays sensitivity

International Nuclear Information System (INIS)

Gerstenmayer, J.L.; Vibert, Patrick; Mercier, Patrick; Rayer, Claude; Hyvernage, Michel; Herino, Roland; Bsiesy, Ahmad

1994-01-01

We demonstrate that high porosity anodically porous silicon is radioluminescent. Interests of this study are double. Firstly: is the construction of porous silicon X-rays detectors (imagers) possible? Secondly: is it necessary to protect silicon porous based optoelectronic systems from ionising radiations effects (spatial environment)? ((orig.))

High-density oxidized porous silicon

International Nuclear Information System (INIS)

Gharbi, Ahmed; Souifi, Abdelkader; Remaki, Boudjemaa; Halimaoui, Aomar; Bensahel, Daniel

2012-01-01

We have studied oxidized porous silicon (OPS) properties using Fourier transform infraRed (FTIR) spectroscopy and capacitance–voltage C–V measurements. We report the first experimental determination of the optimum porosity allowing the elaboration of high-density OPS insulators. This is an important contribution to the research of thick integrated electrical insulators on porous silicon based on an optimized process ensuring dielectric quality (complete oxidation) and mechanical and chemical reliability (no residual pores or silicon crystallites). Through the measurement of the refractive indexes of the porous silicon (PS) layer before and after oxidation, one can determine the structural composition of the OPS material in silicon, air and silica. We have experimentally demonstrated that a porosity approaching 56% of the as-prepared PS layer is required to ensure a complete oxidation of PS without residual silicon crystallites and with minimum porosity. The effective dielectric constant values of OPS materials determined from capacitance–voltage C–V measurements are discussed and compared to FTIR results predictions. (paper)

Silicon spintronics with ferromagnetic tunnel devices

International Nuclear Information System (INIS)

Jansen, R; Sharma, S; Dash, S P; Min, B C

2012-01-01

In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of silicon spintronics, namely the creation, detection and manipulation of spin polarization in silicon. Ferromagnetic tunnel contacts are the key elements and provide a robust and viable approach to induce and probe spins in silicon, at room temperature. We describe the basic physics of spin tunneling into silicon, the spin-transport devices, the materials aspects and engineering of the magnetic tunnel contacts, and discuss important quantities such as the magnitude of the spin accumulation and the spin lifetime in the silicon. We highlight key experimental achievements and recent progress in the development of a spin-based information technology. (topical review)

Radiation stable, hybrid, chemical vapor infiltration/preceramic polymer joining of silicon carbide components

Energy Technology Data Exchange (ETDEWEB)

Khalifa, Hesham E., E-mail: hesham.khalifa@ga.com [General Atomics, 3550 General Atomics Ct., San Diego 92121, CA (United States); Koyanagi, Takaaki [Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge 37831, TN (United States); Jacobsen, George M.; Deck, Christian P.; Back, Christina A. [General Atomics, 3550 General Atomics Ct., San Diego 92121, CA (United States)

2017-04-15

This paper reports on a nuclear-grade joining material for bonding of silicon carbide-based components. The joint material is fabricated via a hybrid preceramic polymer, chemical vapor infiltration process. The joint is comprised entirely of β-SiC and results in excellent mechanical and permeability performance. The joint strength, composition, and microstructure have been characterized before and after irradiation to 4.5 dpa at 730 °C in the High Flux Isotope Reactor. The hybrid preceramic polymer-chemical vapor infiltrated joint exhibited complete retention of shear strength and no evidence of microstructural evolution or damage was detected following irradiation.

Study of double porous silicon surfaces for enhancement of silicon solar cell performance

Science.gov (United States)

Razali, N. S. M.; Rahim, A. F. A.; Radzali, R.; Mahmood, A.

2017-09-01

In this work, design and simulation of double porous silicon surfaces for enhancement of silicon solar cell is carried out. Both single and double porous structures are constructed by using TCAD ATHENA and TCAD DEVEDIT tools of the SILVACO software respectively. After the structures were created, I-V characteristics and spectral response of the solar cell were extracted using ATLAS device simulator. Finally, the performance of the simulated double porous solar cell is compared with the performance of both single porous and bulk-Si solar cell. The results showed that double porous silicon solar cell exhibited 1.8% efficiency compared to 1.3% and 1.2% for single porous silicon and bulk-Si solar cell.

Effects of selected casting methods on mechanical behaviour of Al-Mg-Si alloy

Directory of Open Access Journals (Sweden)

Henry Kayode TALABI

2014-11-01

Full Text Available This study investigated the effects of selected casting methods on mechanical behaviour of Al-Mg-Si alloy. The casting methods used was spin, sand and die casting, these were done with a view to determine which of the casting methods will produce the best properties. The pure aluminium scrap, magnesium and silicon were subjected to chemical analysis using spectrometric analyzer, thereafter the charge calculation to determine the amount needed to be charged into the furnace was properly worked out and charged into the crucible furnace from which as-cast aluminium was obtained. The mechanical properties of the casting produced were assessed by hardness and impact toughness test. The optical microscopy and experimental density and porosity were also investigated. From the results it was observed that magnesium and silicon were well dispersed in aluminium matrix of the spin casting. It was observed from visual examination after machining that there were minimal defects. It was also observed that out of the three casting methods, spin casting possesses the best mechanical properties (hardness and impact toughness.

All-solid-state supercapacitors on silicon using graphene from silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Wang, Bei; Ahmed, Mohsin; Iacopi, Francesca, E-mail: f.iacopi@griffith.edu.au [Environmental Futures Research Institute, Griffith University, Nathan 4111 (Australia); Wood, Barry [Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia 4072 (Australia)

2016-05-02

Carbon-based supercapacitors are lightweight devices with high energy storage performance, allowing for faster charge-discharge rates than batteries. Here, we present an example of all-solid-state supercapacitors on silicon for on-chip applications, paving the way towards energy supply systems embedded in miniaturized electronics with fast access and high safety of operation. We present a nickel-assisted graphitization method from epitaxial silicon carbide on a silicon substrate to demonstrate graphene as a binder-free electrode material for all-solid-state supercapacitors. We obtain graphene electrodes with a strongly enhanced surface area, assisted by the irregular intrusion of nickel into the carbide layer, delivering a typical double-layer capacitance behavior with a specific area capacitance of up to 174 μF cm{sup −2} with about 88% capacitance retention over 10 000 cycles. The fabrication technique illustrated in this work provides a strategic approach to fabricate micro-scale energy storage devices compatible with silicon electronics and offering ultimate miniaturization capabilities.

All-solid-state supercapacitors on silicon using graphene from silicon carbide

International Nuclear Information System (INIS)

Wang, Bei; Ahmed, Mohsin; Iacopi, Francesca; Wood, Barry

2016-01-01

Carbon-based supercapacitors are lightweight devices with high energy storage performance, allowing for faster charge-discharge rates than batteries. Here, we present an example of all-solid-state supercapacitors on silicon for on-chip applications, paving the way towards energy supply systems embedded in miniaturized electronics with fast access and high safety of operation. We present a nickel-assisted graphitization method from epitaxial silicon carbide on a silicon substrate to demonstrate graphene as a binder-free electrode material for all-solid-state supercapacitors. We obtain graphene electrodes with a strongly enhanced surface area, assisted by the irregular intrusion of nickel into the carbide layer, delivering a typical double-layer capacitance behavior with a specific area capacitance of up to 174 μF cm"−"2 with about 88% capacitance retention over 10 000 cycles. The fabrication technique illustrated in this work provides a strategic approach to fabricate micro-scale energy storage devices compatible with silicon electronics and offering ultimate miniaturization capabilities.

Enhanced Raman scattering in porous silicon grating.

Science.gov (United States)

Wang, Jiajia; Jia, Zhenhong; Lv, Changwu

2018-03-19

The enhancement of Raman signal on monocrystalline silicon gratings with varying groove depths and on porous silicon grating were studied for a highly sensitive surface enhanced Raman scattering (SERS) response. In the experiment conducted, porous silicon gratings were fabricated. Silver nanoparticles (Ag NPs) were then deposited on the porous silicon grating to enhance the Raman signal of the detective objects. Results show that the enhancement of Raman signal on silicon grating improved when groove depth increased. The enhanced performance of Raman signal on porous silicon grating was also further improved. The Rhodamine SERS response based on Ag NPs/ porous silicon grating substrates was enhanced relative to the SERS response on Ag NPs/ porous silicon substrates. Ag NPs / porous silicon grating SERS substrate system achieved a highly sensitive SERS response due to the coupling of various Raman enhancement factors.

Metal impurities profile in a 450kg multi-crystalline silicon ingot by Cold Neutron Prompt Gamma-ray Activation Analysis

International Nuclear Information System (INIS)

Baek, Hani; Sun, Gwang Min; Kim, Ji seok; Oh, Mok; Chung, Yong Sam; Moon, Jong Hwa; Kim, Sun Ha; Baek, Sung Yeol; Tuan, Hoang Sy Minh

2014-01-01

Metal impurities are harmful to multi-crystalline silicon solar cells. They reduce solar cell conversion efficiencies through increased carrier recombination. They are present as isolated point-like impurities or precipitates. This work is to study the concentration profiles of some metal impurities of the directionally solidified 450kg multi-crystalline silicon ingot grown for solar cell production. The concentration of such impurities are generally below 10 15 cm -3 , and as such cannot be detected by physical techniques such as secondary-ion-mass spectroscopy(SIMS). So, we have tried to apply Cold Neutron - Prompt Gamma ray Activation Analysis(CN-PGAA) at the HANARO reactor research. The impurity concentrations of Au, Mn, Pt, Mo of a photovoltaic grade multi-crystalline silicon ingot appear by segregation from the liquid to the solid phase in the central region of the ingot during the crystallization. In the impurities concentration of the bottom region is higher than middle region due to the solid state diffusion. Towards the top region the segregation impurities diffused, during cooling process

The Influence of Aluminum on the Microstructure and Hardness of Mg-5Si-7Sn Alloy

Directory of Open Access Journals (Sweden)

Rzychoń T.

2016-03-01

Full Text Available Magnesium alloys due the low density and good mechanical properties are mainly used in the automotive and aerospace industry. In recent years, magnesium alloys are extensively developed for use in high temperatures (above 120°C. Among these alloys, magnesium alloys containing tin and silicon have large possibilities of application due to the formation of thermally stable intermetallic Mg2Sn and Mg2Si. In this paper the influence of aluminum and heat treatment on the on the microstructure and hardness of Mg-7Sn-5Si alloy is reported. It was found that the microstructure of Mg-7Sn-5Si alloy consist of α-Mg solid solution, Mg2Sn and Mg2Si compounds. Addition of 2 wt% of Al to Mg-7Sn-5Si alloy causes the formation of Al2Sn phase. Moreover, Al dissolves in the α-Mg solid solution. The solution heat-treatment of tested alloys at 500°C for 24 h causes the dissolve the Mg2Sn phase in the α-Mg matrix and spheroidization of Mg2Si compound. The Mg2Si primary crystals are stable at solution temperature. After ageing treatment the precipitation process of equilibrium Mg2Sn phase was found in both alloys. The addition of aluminum has a positive effect on the hardness of Mg-7Sn-5Si alloy. In case of Mg-5Si-7Sn-2Al alloy the highest hardness was obtained for sample aged for 148 h at 250°C (88 HV2, while in case of Al-free alloy the highest hardness is 70 HV for material aged for 148 h at 250°C.

Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption

Directory of Open Access Journals (Sweden)

Kae Dal Kwack

2011-01-01

Full Text Available A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.

Photo-EMF sensitivity of porous silicon thin layer-crystalline silicon heterojunction to ammonia adsorption.

Science.gov (United States)

Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

2011-01-01

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.

Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption

Science.gov (United States)

Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

2011-01-01

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light. PMID:22319353

Reduction of absorption loss in multicrystalline silicon via combination of mechanical grooving and porous silicon

Energy Technology Data Exchange (ETDEWEB)

Ben Rabha, Mohamed; Mohamed, Seifeddine Belhadj; Dimassi, Wissem; Gaidi, Mounir; Ezzaouia, Hatem; Bessais, Brahim [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

2011-03-15

Surface texturing of silicon wafer is a key step to enhance light absorption and to improve the solar cell performances. While alkaline-texturing of single crystalline silicon wafers was well established, no efficient chemical solution has been successfully developed for multicrystalline silicon wafers. Thus, the use of alternative new methods for effective texturization of multicrystalline silicon is worth to be investigated. One of the promising texturing techniques of multicrystalline silicon wafers is the use of mechanical grooves. However, most often, physical damages occur during mechanical grooves of the wafer surface, which in turn require an additional step of wet processing-removal damage. Electrochemical surface treatment seems to be an adequate solution for removing mechanical damage throughout porous silicon formation. The topography of untreated and porous silicon-treated mechanically textured surface was investigated using scanning electron microscopy (SEM). As a result of the electrochemical surface treatment, the total reflectivity drops to about 5% in the 400-1000 nm wavelength range and the effective minority carrier diffusion length enhances from 190 {mu}m to about 230 {mu}m (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

The Effectiveness of Al-Si Coatings for Preventing Interfacial Reaction in Al-Mg Dissimilar Metal Welding

Science.gov (United States)

Wang, Yin; Al-Zubaidy, Basem; Prangnell, Philip B.

2018-01-01

The dissimilar welding of aluminum to magnesium is challenging because of the rapid formation of brittle intermetallic compounds (IMC) at the weld interface. An Al-Si coating interlayer was selected to address this problem, based on thermodynamic calculations which predicted that silicon would change the reaction path to avoid formation of the normally observed binary Al-Mg IMC phases ( β-Al3Mg2 and γ-Al12Mg17). Long-term static heat treatments confirmed that a Si-rich coating will preferentially produce the Mg2Si phase in competition with the less stable, β-Al3Mg2 and γ-Al12Mg17 binary IMC phases, and this reduced the overall reaction layer thickness. However, when an Al-Si clad sheet was tested in a real welding scenario, using the Refill™ friction stir spot welding (FSSW) technique, Mg2Si was only produced in very small amounts owing to the much shorter reaction time. Surprisingly, the coating still led to a significant reduction in the IMC reaction layer thickness and the welds exhibited enhanced mechanical performance, with improved strength and fracture energy. This beneficial behavior has been attributed to the softer coating material both reducing the welding temperature and giving rise to the incorporation of Si particles into the reaction layer, which toughened the brittle interfacial IMC phases during crack propagation.

Laboratory course on silicon sensors

CERN Document Server

Crescio, E; Roe, S; Rudge, A

2003-01-01

The laboratory course consisted of four different mini sessions, in order to give the student some hands-on experience on various aspects of silicon sensors and related integrated electronics. The four experiments were. 1. Characterisation of silicon diodes for particle detection 2. Study of noise performance of the Viking readout circuit 3. Study of the position resolution of a silicon microstrip sensor 4. Study of charge transport in silicon with a fast amplifier The data in the following were obtained during the ICFA school by the students.

Performance Evaluation of an Automotive-Grade, High Speed Gate Driver for SiC FETs, Type UCC27531, Over a Wide Temperature Range

Science.gov (United States)

Boomer, Kristen; Hammoud, Ahmad

2015-01-01

Silicon carbide (SiC) devices are becoming widely used in electronic power circuits as replacement for conventional silicon parts due to their attractive properties that include low on-state resistance, high temperature tolerance, and high frequency operation. These attributes have a significant impact by reducing system weight, saving board space, and conserving power. In this work, the performance of an automotive-grade high speed gate driver with potential use in controlling SiC FETs (field-Effect Transistors) in converters or motor control applications was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

Application of hydrogen-plasma technology for property modification of silicon and producing the silicon-based structures

International Nuclear Information System (INIS)

Fedotov, A.K.; Mazanik, A.V.; Ul'yashin, A.G.; Dzhob, R; Farner, V.R.

2000-01-01

Effects of atomic hydrogen on the properties of Czochralski-grown single crystal silicon as well as polycrystalline shaped silicon have been investigated. It was established that the buried defect layers created by high-energy hydrogen or helium ion implantation act as a good getter centers for hydrogen atoms introduced in silicon in the process of hydrogen plasma hydrogenation. Atomic hydrogen was shown to be active as a catalyzer significantly enhancing the rate of thermal donors formation in p-type single crystal silicon. This effect can be used for n-p- and p-n-p-silicon based device structures producing [ru

Effect of Mg and Si co-substitution on microstructure and strength of tricalcium phosphate ceramics.

Science.gov (United States)

García-Páez, Ismael H; Carrodeguas, Raúl García; De Aza, Antonio H; Baudín, Carmen; Pena, Pilar

2014-02-01

Magnesium and silicon co-doped tricalcium phosphate (TCP) ceramics with compositions corresponding to 0, 5 and 10wt% CaMg(SiO3)2 in the system Ca3(PO4)2-CaMg(SiO3)2 were obtained by conventional sintering of compacted mixtures of Ca3(PO4)2, MgO, SiO2 and CaCO3 powders at temperatures between 1100 and 1450°C. Microstructural analyses were performed by X-ray diffraction and field emission scanning electron microscopy with energy dispersive spectroscopy. Major phases in the obtained ceramics were β- or α+β-tricalcium phosphate containing Mg and Si in solid solution. Certain amounts of liquid were formed during sintering depending on composition and temperature. There were found significant differences in distributions of strength determined by the diametral compression of disc tests (DCDT). Failure strengths were controlled by microstructural defects associated with phase development. Mg and Si additions were found to be effective to improve densification and associated strength of TCP bioceramics due to the enhancement of sintering by the low viscosity liquids formed. The highest density and strength were obtained for the TCP ceramic containing 5wt% CaMg(SiO3)2 sintered at 1300°C. Cracking and porosity increased at higher temperatures due to grain growth and swelling. © 2013 Published by Elsevier Ltd.

Silicon microfabricated beam expander

International Nuclear Information System (INIS)

Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

2015-01-01

The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed

Silicon microfabricated beam expander

Energy Technology Data Exchange (ETDEWEB)

Othman, A., E-mail: aliman@ppinang.uitm.edu.my; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A. [Faculty of Electrical Engineering, Universiti Teknologi MARA Malaysia, 40450, Shah Alam, Selangor (Malaysia); Ain, M. F. [School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300,Nibong Tebal, Pulau Pinang (Malaysia)

2015-03-30

The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

Using silicon nanostructures for the improvement of silicon solar cells' efficiency

International Nuclear Information System (INIS)

Torre, J. de la; Bremond, G.; Lemiti, M.; Guillot, G.; Mur, P.; Buffet, N.

2006-01-01

Silicon nanostructures (ns-Si) show interesting optical and electrical properties as a result of the band gap widening caused by quantum confinement effects. Along with their potential utilization for silicon-based light emitters' fabrication, they could also represent an appealing option for the improvement of energy conversion efficiency in silicon-based solar cells whether by using their luminescence properties (photon down-conversion) or the excess photocurrent produced by an improved high-energy photon's absorption. In this work, we report on the morphological and optical studies of non-stoichiometric silica (SiO x ) and silicon nitride (SiN x ) layers containing silicon nanostructures (ns-Si) in view of their application for solar cell's efficiency improvement. The morphological studies of the samples performed by transmission electron microscopy (TEM) unambiguously show the presence of ns-Si in a crystalline form for high temperature-annealed SiO x layers and for low temperature deposition of SiN x layers. The photoluminescence emission (PL) shows a rather high efficiency in both kind of layers with an intensity of only a factor ∼ 100 lower than that of porous silicon (pi-Si). The photocurrent spectroscopy (PC) shows a significant increase of absorption at high photon energy excitation most probably related to photon absorption within ns-Si quantized states. Moreover, the absorption characteristics obtained from PC spectra show a good agreement with the PL emission states unambiguously demonstrating a same origin, related to Q-confined excitons within ns-Si. Finally, the major asset of this material is the possibility to incorporate it to solar cells manufacturing processing for an insignificant cost

Silicon processing for photovoltaics II

CERN Document Server

Khattak, CP

2012-01-01

The processing of semiconductor silicon for manufacturing low cost photovoltaic products has been a field of increasing activity over the past decade and a number of papers have been published in the technical literature. This volume presents comprehensive, in-depth reviews on some of the key technologies developed for processing silicon for photovoltaic applications. It is complementary to Volume 5 in this series and together they provide the only collection of reviews in silicon photovoltaics available.The volume contains papers on: the effect of introducing grain boundaries in silicon; the

Phase I and pharmacokinetic study of preirradiation chemotherapy with BCNU, cisplatin, etoposide, and accelerated radiation therapy in patients with high-grade glioma

International Nuclear Information System (INIS)

Rajkumar, S. Vincent; Buckner, Jan C.; Schomberg, Paula J.; Reid, Joel M.; Bagniewski, Pamela J.; Ames, Matthew M.; Cascino, Terrence L.; Marks, Randolph S.

1998-01-01

Purpose: We conducted a Phase I study of bischloroethylnitrosourea (BCNU), cisplatin, and oral etoposide administered prior to and during accelerated hyperfractionated radiation therapy in newly diagnosed high-grade glioma. Pharmacokinetic studies of oral etoposide were also done. Methods and Materials: Patients started chemotherapy after surgery but prior to definitive radiation therapy (160 cGy twice daily x 15 days; 4800 cGy total). Initial chemotherapy consisted of BCNU 40 mg/m 2 days 1-3, cisplatin 30 mg/m 2 days 1-3 and 29-31, and etoposide 50 mg orally days 1-14 and 29-42, repeated in 8 weeks concurrent with radiation therapy. BCNU 200 mg/m 2 every 8 weeks x 4 cycles was given after radiation therapy. Results: Sixteen patients, 5 with grade 3 anaplastic astrocytoma and 11 with glioblastoma were studied. Grade 3-4 leukopenia (38%) and thrombocytopenia (31%) were dose-limiting. Other toxicities were anorexia (81%), nausea (94%), emesis (56%), alopecia (88%), and ototoxicity (38%). The maximum tolerated dose was BCNU 40 mg/m 2 days 1-3, cisplatin 20 mg/m 2 days 1-3 and 29-31, and oral etoposide 50 mg days 1-21 and 29-49 prior to radiation therapy and repeated in 8 weeks with the start of radiation therapy followed by BCNU 200 mg/m 2 every 8 weeks for 4 cycles. Median time to progression and survival were 13 and 14 months respectively. Responses occurred in 2 of 9 (22%) patients with evaluable disease. In pharmacokinetic studies, all patients achieved plasma concentrations of >0.1 μg/ml etoposide (the in vitro radiosensitizing threshold), following a 50 mg oral dose. The mean ± SD 2 hr and 6 hr plasma concentrations were 0.92 ± 0.43 μg/ml and 0.36 ± 0.12 μg/ml, respectively. Estimated duration of exposure to >0.1 μg/ml etoposide was 10-17 hr. Conclusions: Preirradiation chemotherapy with BCNU, cisplatin, and oral etoposide with accelerated hyperfractionated radiation therapy in high-grade gliomas is feasible and merits further investigation. Sustained

Production of carrier-free 28Mg and 24Na by 50-180 MeV protons on Si, P, S, Cl, Ar and K. Excitation functions and chemical separation

International Nuclear Information System (INIS)

Lundqvist, H.; Malmborg, P.

1976-01-01

This work investigates the possible use of high energy proton bomardment of silicon, phosphorous, sulphur, chlorine, argon or potassium for production of carrier-free 28 Mg. A chemical separation is essential in this preparation in order to get rid of the bulk of target material and contaminating radionuclides. A simple and efficient method to get carrier-free 28 Mg with neglectible amounts of radio-chemical impurities has been established. (Auth.)

Photoluminescence of Mg{sub 2}Si films fabricated by magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Liao, Yang-Fang [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China); School of Physics and Electronic Science of Guizhou Normal University, Guiyang 550001 (China); Xie, Quan, E-mail: qxie@gzu.edu.cn [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China); Xiao, Qing-Quan [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China); Engineering Center for Avionics Electrical and Information Network of Guizhou Provincial Colleges and Universities, Anshun 561000 (China); Chen, Qian; Fan, Meng-Hui [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China); Xie, Jing [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China); School of Physics and Electronic Science of Guizhou Normal University, Guiyang 550001 (China); Huang, Jin; Zhang, Jin-Min; Ma, Rui; Wang, Shan-Lan; Wu, Hong-Xian; Fang, Di [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China)

2017-05-01

Highlights: • High quality Mg{sub 2}Si films were grown on Si (111) and glass substrates with magnetron sputtering, respectively. • The first observation of Photoluminescence (PL) of Mg{sub 2}Si films was reported. • The Mg{sub 2}Si PL emission wavelengths are almost independence on temperature in the range of 77–300 K. • The strongest PL emissions may be attributed to interstitial Mg donor level to valence band transitions. • The activation energy of Mg{sub 2}Si is determined from the quenching of major luminescence peaks. - Abstract: To understand the photoluminescence mechanisms and optimize the design of Mg{sub 2}Si-based light-emitting devices, Mg{sub 2}Si films were fabricated on silicon (111) and glass substrates by magnetron sputtering technique, and the influences of different substrates on the photoelectric properties of Mg{sub 2}Si films were investigated systematically. The crystal structure, cross-sectional morphology, composition ratios and temperature-dependent photoluminescence (PL) of the Mg{sub 2}Si films were examined using X-ray diffraction (XRD), Scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS) and PL measurement system, respectively. XRD results indicate that the Mg{sub 2}Si film on Si (111) displays polycrystalline structure, whereas Mg{sub 2}Si film on glass substrate is of like-monocrystalline structure.SEM results show that Mg{sub 2}Si film on glass substrate is very compact with a typical dense columnar structure, and the film on Si substrate represents slight delamination phenomenon. EDS results suggest that the stoichiometry of Mg and Si is approximately 2:1. Photoluminescence (PL) of Mg{sub 2}Si films was observed for the first time. The PL emission wavelengths of Mg{sub 2}Si are almost independence on temperature in the range of 77–300 K. The PL intensity decreases gradually with increasing temperature. The PL intensity of Mg{sub 2}Si films on glass substrate is much larger than that of Mg

Sol-gel synthesis of magnesium oxide-silicon dioxide glass compositions

Science.gov (United States)

Bansal, Narottam P.

1988-01-01

MgO-SiO2 glasses containing up to 15 mol pct MgO, which could not have been prepared by the conventional glass melting method due to the presence of stable liquid-liquid immiscibility, were synthesized by the sol-gel technique. Clear and transparent gels were obtained from the hydrolysis and polycondensation of silicon tetraethoxide (TEOS) and magnesium nitrate hexahydrate when the water/TEOS mole ratio was four or more. The gelling time decreased with increase in magnesium content, water/TEOS ratio, and reaction temperature. Magnesium nitrate hexahydrate crystallized out of the gels containing 15 and 20 mol pct MgO on slow drying. This problem was partially alleviated by drying the gels quickly at higher temperatures. Monolithic gel samples were prepared using glycerol as the drying control additive. The gels were subjected to various thermal treatments and characterized by several methods. No organic groups could be detected in the glasses after heat treatments to approx. 800 C, but trace amounts of hydroxyl groups were still present. No crystalline phase was found from X-ray diffraction in the gel samples to approx. 890 C. At higher temperatures, alpha quartz precipitated out as the crystalline phase in gels containing up to 10 mol pct MgO. The overall activation energy for gel formation in 10MgO-90SiO2 (mol pct) system for water/TEOS mole ratio of 7.5 was calculated to be 58.7 kJ/mol.

Nano-ridge fabrication by local oxidation of silicon edges with silicon nitride as a mask

NARCIS (Netherlands)

Haneveld, J.; Berenschot, Johan W.; Maury, P.A.; Jansen, Henricus V.

2005-01-01

A method to fabricate nano-ridges over a full wafer is presented. The fabrication method uses local oxidation of silicon, with silicon nitride as a mask, and wet anisotropic etching of silicon. The realized structures are 7-20 nm wide, 40-100 nm high and centimeters long. All dimensions are easily

Silicon nanowire hybrid photovoltaics

KAUST Repository

Garnett, Erik C.

2010-06-01

Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

Silicon nanowire hybrid photovoltaics

KAUST Repository

Garnett, Erik C.; Peters, Craig; Brongersma, Mark; Cui, Yi; McGehee, Mike

2010-01-01

Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

Evaluation of neutron irradiated near-stoichiometric silicon carbide fiber composites

International Nuclear Information System (INIS)

Snead, L.L.; Katoh, Y.; Kohyama, A.; Bailey, J.L.; Vaughn, N.L.; Lowden, R.A.

2000-01-01

Composites have been fabricated by chemical vapor infiltration of silicon carbide (SiC) into SiC-based fiber preforms. Fibers were Ceramic Grade Nicalon TM , Hi-Nicalon TM and Hi-Nicalon TM Type-S. Results are presented for two parallel studies on the effects of neutron irradiation on these materials. In the first study, neutron irradiation induced changes in mechanical properties, as measured by bend testing, for Hi-Nicalon TM fiber materials of varied interphase structures is measured. Results indicate that both the Ceramic Grade Nicalon TM and Hi-Nicalon TM materials degrade substantially under irradiation, though the higher oxygen content Ceramic Grade fiber degrades more rapidly and more substantially. Of the three interfaces studied in the Hi-Nicalon TM system, the multilayer SiC is the most radiation resistant. At a dose of ∼1 dpa the mechanical property degradation of the Hi-Nicalon TM composite is consistent with a fiber densification-induced debonding. At a dose of 10 dpa the properties continue to degrade raising the question of degradation in the CVD SiC matrix as well. Low-dose results on the Hi-Nicalon TM Type-S fabricated material are encouraging, as they appear to not lose, and perhaps slightly increase, in ultimate bend strength. This result is consistent with the supposition that as the oxygen content in SiC-based fibers is reduced, the irradiation stability and hence composite performance under irradiation will improve

Design and Fabrication of Silicon-on-Silicon-Carbide Substrates and Power Devices for Space Applications

Directory of Open Access Journals (Sweden)

Gammon P.M.

2017-01-01

Full Text Available A new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications. 200-600 V lateral transistors and diodes are being fabricated in a thin layer of silicon (Si wafer bonded to silicon carbide (SiC. This novel silicon-on-silicon-carbide (Si/SiC substrate solution promises to combine the benefits of silicon-on-insulator (SOI technology (i.e device confinement, radiation tolerance, high and low temperature performance with that of SiC (i.e. high thermal conductivity, radiation hardness, high temperature performance. Details of a process are given that produces thin films of silicon 1, 2 and 5 μm thick on semi-insulating 4H-SiC. Simulations of the hybrid Si/SiC substrate show that the high thermal conductivity of the SiC offers a junction-to-case temperature ca. 4× less that an equivalent SOI device; reducing the effects of self-heating, and allowing much greater power density. Extensive electrical simulations are used to optimise a 600 V laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET implemented entirely within the silicon thin film, and highlight the differences between Si/SiC and SOI solutions.

Silicon oxide nanoimprint stamp fabrication by edge lithography reinforced with silicon nitride

NARCIS (Netherlands)

Zhao, Yiping; Berenschot, Johan W.; de Boer, Meint J.; Jansen, Henricus V.; Tas, Niels Roelof; Huskens, Jurriaan; Elwenspoek, Michael Curt

2007-01-01

The fabrication of silicon oxide nanoimprint stamp employing edge lithography in combination with silicon nitride deposition is presented. The fabrication process is based on conventional photolithography an weg etching methods. Nanoridges with width dimension of sub-20 nm were fabricated by edge

Amorphous silicon rich silicon nitride optical waveguides for high density integrated optics

DEFF Research Database (Denmark)

Philipp, Hugh T.; Andersen, Karin Nordström; Svendsen, Winnie Edith

2004-01-01

Amorphous silicon rich silicon nitride optical waveguides clad in silica are presented as a high-index contrast platform for high density integrated optics. Performance of different cross-sectional geometries have been measured and are presented with regards to bending loss and insertion loss...

Process for forming a porous silicon member in a crystalline silicon member

Science.gov (United States)

Northrup, M. Allen; Yu, Conrad M.; Raley, Norman F.

1999-01-01

Fabrication and use of porous silicon structures to increase surface area of heated reaction chambers, electrophoresis devices, and thermopneumatic sensor-actuators, chemical preconcentrates, and filtering or control flow devices. In particular, such high surface area or specific pore size porous silicon structures will be useful in significantly augmenting the adsorption, vaporization, desorption, condensation and flow of liquids and gasses in applications that use such processes on a miniature scale. Examples that will benefit from a high surface area, porous silicon structure include sample preconcentrators that are designed to adsorb and subsequently desorb specific chemical species from a sample background; chemical reaction chambers with enhanced surface reaction rates; and sensor-actuator chamber devices with increased pressure for thermopneumatic actuation of integrated membranes. Examples that benefit from specific pore sized porous silicon are chemical/biological filters and thermally-activated flow devices with active or adjacent surfaces such as electrodes or heaters.

7 CFR 810.2204 - Grades and grade requirements for wheat.

Science.gov (United States)

2010-01-01

... 7 Agriculture 7 2010-01-01 2010-01-01 false Grades and grade requirements for wheat. 810.2204... OFFICIAL UNITED STATES STANDARDS FOR GRAIN United States Standards for Wheat Principles Governing the Application of Standards § 810.2204 Grades and grade requirements for wheat. (a) Grades and grade requirements...