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Sample records for gluten films electronic

  1. Identification by microscopy and MS-based electronic nose of a fraudulent addition to maize gluten

    Directory of Open Access Journals (Sweden)

    Frick G.

    2009-01-01

    Full Text Available Classical and chemometric methods have been used to detect falsified maize gluten products. Microscopic observations (numerous starch grains, seed envelopes and wheat bran fragments clearly showed the presence of atypical maize gluten particles in samples with otherwise normal crude protein levels (≥ 60% and the usual gold-yellow color. Chemical analyses in a few samples confirmed the presence of urea (19 to 174 g.kg-1, melamine (0 to 20 g.kg-1, and cyanuric acid (0 to 10 g.kg-1 coping for the low levels of methionine (0 to 13 g.kg-1 in incriminated products (genuine maize gluten methionine level ≥ 16 g.kg-1. Furthermore, a fast technique (an electronic nose based on mass spectrometry detection also proved to be reliable for the identification of falsified maize gluten products: 100% correct classification of model and unknown samples was achieved with principal component analysis. As a consequence of these results, the Swiss feed-inspection authority blocked the import, or restricted the use, of 2,500 tons of the falsified products.

  2. Development and characterization of edible films based on gluten from semi-hard and soft Brazilian wheat flours (development of films based on gluten from wheat flours Desenvolvimento e caracterização de filmes comestíveis de glúten de farinhas fortes e fracas de trigos brasileiros

    Directory of Open Access Journals (Sweden)

    Patrícia Sayuri Tanada-Palmu

    2003-08-01

    Full Text Available Edible films based on gluten from four types of Brazilian wheat gluten (2 "semi-hard" and 2 "soft" were prepared and mechanical and barrier properties were compared with those of wheat gluten films with vital gluten. Water vapor, oxygen permeability, tensile strength and percent elongation at break, solubility in water and surface morphology were measured. The films from "semi-hard" wheat flours showed similar water vapor permeability and solubility in water to films from vital gluten and better tensile strength than the films from "soft" and vital gluten. The films from vital gluten had higher elongation at break and oxygen permeability and also lower solubility in water than the films from the Brazilian wheat "soft" flours. In spite of the vital gluten showed greater mechanical resistance, desirable for the bakery products, for the purpose of developing gluten films Brazilian "semi-hard" wheat flours can be used instead of vital gluten, since they showed similar barrier and mechanical properties.Filmes à base de glúten de quatro tipos de farinhas de trigo brasileiras (2 "semi-fortes " e 2 "fracas" foram preparados e suas propriedades mecânicas e de barreira foram comparadas com filmes com glúten vital (comercial. Permeabilidade ao vapor d'água e oxigênio, resistência à tração, porcentagem de elongação na ruptura, solubilidade em água e morfologia de superfície foram medidas. Filmes de glúten das farinhas "semi-fortes" mostraram similar permeabilidade ao vapor d'água e solubilidade em água em comparação aos filmes de glúten vital e melhor resistência à tração do que os filmes das farinhas "fracas" e glúten vital. O filme de glúten vital apresentou maior elongação na ruptura e permeabilidade ao oxigênio do que os filmes das farinhas brasileiras e ainda mais baixa solubilidade que as farinhas fracas. Apesar do glúten vital ter uma grande resistência mecânica, desejável para produtos de panificação, para o prop

  3. Gluten Sensitivity

    Science.gov (United States)

    ... Getting Started Diet & Nutrition Adding Fiber to Your Gluten-Free Diet Celiac Disease in the Older Adult Flours, Grains, Thickening Agents, Starches GIG’s Gluten-Free Diet and Drug Instruction Gluten-Free Grains Heart Healthy ...

  4. Surface electrons of helium films

    International Nuclear Information System (INIS)

    Studart, N.; Hipolito, O.

    1986-01-01

    Theoretical calculations of some properties of two-dimensional electrons on a liquid helium film adsorbed on a solid substrate are reviewed. We describe the spectrum of electron bound states on bulk helium as well on helium films. The correlational properties, such as the structure factor and correlation energy, are determined as functions of the film thickness for different types of substrates in the framework of a Generalized Random-Phase Approximation. The collective excitations of this system are also described. The results for electrons on the surface of thin films and bulk helium are easily obtained. we examine the electron interaction with the excitations of the liquid helium surface resulting in a new polaron state, which was observed very recently. The ground state energy and the effective mass of this polaron are determined by using the path-integral formalism and unitary-transformation method. Recent speculations about the phase diagram of electrons on the helium film are also discussed. (Author) [pt

  5. Superconducting Electronic Film Structures

    Science.gov (United States)

    1991-02-14

    Segmuller, A., Cooper, E.I., Chisholm, M.F., Gupta, A. Shinde, S., and Laibowitz, R.B. Lanthanum gallate substrates for epitaxial high-T superconducting thin...M. F. Chisholm, A. Gupta, S. Shinde, and R. B. Laibowitz, " Lanthanum Gallate Substrates for Epitaxial High-T c Superconducting Thin Films," Appl...G. Forrester and J. Talvacchio, " Lanthanum Copper Oxide Buffer Layers for Growth of High-T c Superconductor Films," Disclosure No. RDS 90-065, filed

  6. Tailoring electronic structure of polyazomethines thin films

    OpenAIRE

    J. Weszka; B. Hajduk; M. Domański; M. Chwastek; J. Jurusik; B. Jarząbek; H. Bednarski; P. Jarka

    2010-01-01

    Purpose: The aim of this work is to show how electronic properties of polyazomethine thin films deposited by chemical vapor deposition method (CVD) can be tailored by manipulating technological parameters of pristine films preparation as well as modifying them while the as-prepared films put into iodine atmosphere.Design/methodology/approach: The recent achievements in the field of designing and preparation methods to be used while preparing polymer photovoltaic solar cells or optoelectronic ...

  7. Field electron emission from branched nanotubes film

    International Nuclear Information System (INIS)

    Zeng Baoqing; Tian Shikai; Yang Zhonghai

    2005-01-01

    We describe the preparation and analyses of films composed of branched carbon nanotubes (CNTs). The CNTs were grown on a Ni catalyst film using chemical vapor deposition from a gas containing acetylene. From scanning electron microscope (SEM) and transmission electron microscope (TEM) analyses, the branched structure of the CNTs was determined; the field emission characteristics in a vacuum chamber indicated a lower turn on field for branched CNTs than normal CNTs

  8. Electronic structure of semiconductor quantum films

    International Nuclear Information System (INIS)

    Zhang, S.B.; Yeh, C.; Zunger, A.

    1993-01-01

    The electronic structure of thin (≤30 A) free-standing ideal films of Si(001), Si(110), and GaAs(110) is calculated using a plane-wave pseudopotential description. Unlike the expectation based on the simple effective-mass model, we find the following. (i) The band gaps of (001) quantum films exhibit even-odd oscillation as a function of the number N of monolayers. (ii) In addition to sine-type envelope functions which vanish at the film boundaries, some states have cosine envelope functions with extrema at boundaries. (iii) Even-layer Si(001) films exhibit at the valence-band maximum a state whose energy does not vary with the film thickness. Such zero confinement states have constant envelope throughout the film. (iv) Optical transitions in films exhibit boundary-imposed selection rules. Furthermore, oscillator strengths for pseudodirect transitions in the vicinity of forbidden direct transitions can be enhanced by several orders of magnitude. These findings, obtained in direct supercell calculations, can be explained in terms of a truncated crystal (TC) analysis. In this approach the film's wave functions are expanded in terms of pairs of bulk wave functions exhibiting a destructive interference at the boundaries. This maps the eigenvalue spectra of a film onto the bulk band structure evaluated at special k points which satisfy the boundary conditions. We find that the TC representation reproduces accurately the above-mentioned results of direct diagonalization of the film's Hamiltonian. This provides a simple alternative to the effective-mass model and relates the properties of quantum structures to those of the bulk material

  9. Gluten Intolerance Group

    Science.gov (United States)

    ... Intolerance Group (GIG), the industry leader in the certification of gluten-free products and food services, announced today that a wide ... of gluten-free products. One of the top certification programs in the world, GFCO inspects products and manufacturing facilities for gluten, in an effort ...

  10. Electron field emission for ultrananocrystalline diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Krauss, A. R.; Auciello, O.; Ding, M. Q.; Gruen, D. M.; Huang, Y.; Zhirnov, V. V.; Givargizov, E. I.; Breskin, A.; Chechen, R.; Shefer, E. (and others)

    2001-03-01

    Ultrananocrystalline diamond (UNCD) films 0.1--2.4 {mu}m thick were conformally deposited on sharp single Si microtip emitters, using microwave CH{sub 4}--Ar plasma-enhanced chemical vapor deposition in combination with a dielectrophoretic seeding process. Field-emission studies exhibited stable, extremely high (60--100 {mu}A/tip) emission current, with little variation in threshold fields as a function of film thickness or Si tip radius. The electron emission properties of high aspect ratio Si microtips, coated with diamond using the hot filament chemical vapor deposition (HFCVD) process were found to be very different from those of the UNCD-coated tips. For the HFCVD process, there is a strong dependence of the emission threshold on both the diamond coating thickness and Si tip radius. Quantum photoyield measurements of the UNCD films revealed that these films have an enhanced density of states within the bulk diamond band gap that is correlated with a reduction in the threshold field for electron emission. In addition, scanning tunneling microscopy studies indicate that the emission sites from UNCD films are related to minima or inflection points in the surface topography, and not to surface asperities. These data, in conjunction with tight binding pseudopotential calculations, indicate that grain boundaries play a critical role in the electron emission properties of UNCD films, such that these boundaries: (a) provide a conducting path from the substrate to the diamond--vacuum interface, (b) produce a geometric enhancement in the local electric field via internal structures, rather than surface topography, and (c) produce an enhancement in the local density of states within the bulk diamond band gap.

  11. Modifying thin film diamond for electronic applications

    International Nuclear Information System (INIS)

    Baral, B.

    1999-01-01

    The unique combination of properties that diamond possesses are being exploited in both electronic and mechanical applications. An important step forward in the field has been the ability to grow thin film diamond by chemical vapour deposition (CVD) methods and to control parameters such as crystal orientation, dopant level and surface roughness. An extensive understanding of the surface of any potential electronic material is vital to fully comprehend its behaviour within device structures. The surface itself ultimately controls key aspects of device performance when interfaced with other materials. This study has provided insight into important chemical reactions on polycrystalline CVD diamond surfaces, addressing how certain surface modifications will ultimately affect the properties of the material. A review of the structure, bonding, properties and potential of diamond along with an account of the current state of diamond technology and CVD diamond growth is provided. The experimental chapter reviews bulk material and surface analytical techniques employed in this work and is followed by an investigation of cleaning treatments for polycrystalline CVD diamond aimed at removing non-diamond carbon from the surface. Selective acid etch treatments are compared and contrasted for efficacy with excimer laser irradiation and hydrogen plasma etching. The adsorption/desorption kinetics of potential dopant-containing precursors on polycrystalline CVD diamond surfaces have been investigated to compare their effectiveness at introducing dopants into the diamond during the growth stage. Both boron and sulphur-containing precursor compounds have been investigated. Treating polycrystalline CVD diamond in various atmospheres / combination of atmospheres has been performed to enhance electron field emission from the films. Films which do not emit electrons under low field conditions can be modified such that they emit at fields as low as 10 V/μm. The origin of this enhancement

  12. Electron beam curable polymer thick film

    International Nuclear Information System (INIS)

    Nagata, Hidetoshi; Kobayashi, Takashi

    1988-01-01

    Currently, most printed circuit boards are produced by the selective etching of copper clads laminated on dielectric substrates such as paper/phenolic resion or nonwoven glass/epoxy resin composites. After the etchig, various components such as transistors and capacitors are mounted on the boards by soldering. But these are troublesome works, therefore, as an alternative, printing method has been investigated recently. In the printing method, conductor circuits and resistors can be made by printing and curing of the specially prepared paste on dielectric substrates. In the near future, also capacitors are made by same method. Usually, conductor paste, resistor paste and dielectric paste are employed, and in this case, the printing is screen printing, and the curing is done thermally. In order to avoid heating and the deterioration of substrates, attention was paid to electron beam curing, and electron beam curable polymer thick film system was developed. The electron beam curable paste is the milled mixture of a filler and an electron beam curable binder of oligomer/monomer. The major advantage of electron beam curable polymer thick film, the typical data of a printed resistor of this type and its trial are reported. (K.I.)

  13. Principles of electron backscattering by solids and thin films

    International Nuclear Information System (INIS)

    Niedrig, H.

    1977-01-01

    The parameters concerning the electron backscattering from thin films and solids (atomic scattering cross-section, atomic number, single/multiple scattering, film thickness of self-supporting films and of surface films on bulk substrates, scattering angular distribution, angle of incidence, diffraction effects) are described. Their influence on some important contrast mechanisms in scanning electron microscopy (thickness contrast, Z/material contrast, tilting/topography contrast, orientation contrast) is discussed. The main backscattering electron detection systems are briefly described. (orig.) [de

  14. Avoiding Gluten Cross-Contamination

    Science.gov (United States)

    ... Meal Options for Kids with Food Allergies The Gluten-Free Diet Watch and Learn Videos View More What a ... on This Topic Does My Child Need a Gluten Free Diet Gluten is a protein found in certain grains ...

  15. Molecular characterization of organic electronic films.

    Science.gov (United States)

    DeLongchamp, Dean M; Kline, R Joseph; Fischer, Daniel A; Richter, Lee J; Toney, Michael F

    2011-01-18

    Organic electronics have emerged as a viable competitor to amorphous silicon for the active layer in low-cost electronics. The critical performance of organic electronic materials is closely related to their morphology and molecular packing. Unlike their inorganic counterparts, polymers combine complex repeat unit structure and crystalline disorder. This combination prevents any single technique from being able to uniquely solve the packing arrangement of the molecules. Here, a general methodology for combining multiple, complementary techniques that provide accurate unit cell dimensions and molecular orientation is described. The combination of measurements results in a nearly complete picture of the organic film morphology. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Microencapsulated Electrophoretic Films for Electronic Paper Displays

    Science.gov (United States)

    Amundson, Karl

    2003-03-01

    Despite the dominance of liquid crystal displays, they do not perform some functions very well. While backlit liquid crystal displays can offer excellent color performance, they wash out in bright lighting and suffer from high power consumption. Reflective liquid crystal displays have limited brightness, making these devices challenging to read for long periods of time. Flexible liquid crystal displays are difficult to manufacture and keep stable. All of these attributes (long battery lifetime, bright reflective appearance, compatibility with flexible substrates) are traits that would be found in an ideal electronic paper display - an updateable substitute for paper that could be employed in electronic books, newspapers, and other applications. I will discuss technologies that are being developed for electronic-paper-like displays, and especially on particle-based technologies. A microencapsulated electrophoretic display technology is being developed at the E Ink corporation. This display film offers offer high brightness and an ink-on-paper appearance, compatibility with flexible substrates, and image stability that can lead to very low power consumption. I will present some of the physical and chemical challenges associated with making display films with high performance.

  17. Printable Transparent Conductive Films for Flexible Electronics.

    Science.gov (United States)

    Li, Dongdong; Lai, Wen-Yong; Zhang, Yi-Zhou; Huang, Wei

    2018-03-01

    Printed electronics are an important enabling technology for the development of low-cost, large-area, and flexible optoelectronic devices. Transparent conductive films (TCFs) made from solution-processable transparent conductive materials, such as metal nanoparticles/nanowires, carbon nanotubes, graphene, and conductive polymers, can simultaneously exhibit high mechanical flexibility, low cost, and better photoelectric properties compared to the commonly used sputtered indium-tin-oxide-based TCFs, and are thus receiving great attention. This Review summarizes recent advances of large-area flexible TCFs enabled by several roll-to-roll-compatible printed techniques including inkjet printing, screen printing, offset printing, and gravure printing using the emerging transparent conductive materials. The preparation of TCFs including ink formulation, substrate treatment, patterning, and postprocessing, and their potential applications in solar cells, organic light-emitting diodes, and touch panels are discussed in detail. The rational combination of a variety of printed techniques with emerging transparent conductive materials is believed to extend the opportunities for the development of printed electronics within the realm of flexible electronics and beyond. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Gluten-free diet in gluten-related disorders.

    Science.gov (United States)

    Mulder, Chris J J; van Wanrooij, R L J; Bakker, S F; Wierdsma, N; Bouma, G

    2013-01-01

    A gluten-free diet (GFD) is recommended for all patients with coeliac disease (CD). The spectrum of gluten-related disorders in the early 1980s was simple: CD and dermatitis herpetiformis. In the last few years, wheat allergy, gluten ataxia and noncoeliac gluten sensitivity have become new gluten-related topics. Adherence to GFDs in CD is limited and factors influencing adherence are poorly understood. Noncoeliac gluten sensitivity has stimulated the GFD food industry not only in Australia but all over the world. This article provides an overview of GFD in daily practice. Copyright © 2013 S. Karger AG, Basel.

  19. Living Gluten Free

    Science.gov (United States)

    ... Disease" Articles Celiac Disease Changes Everything / What is Celiac Disease? / Symptoms, Diagnosis & Treatment / Four Inches and Seven Pounds… / Learning to Live Well with Celiac Disease / Living Gluten-Free Spring 2015 Issue: Volume 10 ...

  20. Correlation of CVD Diamond Electron Emission with Film Properties

    Science.gov (United States)

    Bozeman, S. P.; Baumann, P. K.; Ward, B. L.; Nemanich, R. J.; Dreifus, D. L.

    1996-03-01

    Electron field emission from metals is affected by surface morphology and the properties of any dielectric coating. Recent results have demonstrated low field electron emission from p-type diamond, and photoemission measurements have identified surface treatments that result in a negative electron affinity (NEA). In this study, the field emission from diamond is correlated with surface treatment, surface roughness, and film properties (doping and defects). Electron emission measurements are reported on diamond films synthesized by plasma CVD. Ultraviolet photoemission spectroscopy indicates that the CVD films exhibit a NEA after exposure to hydrogen plasma. Field emission current-voltage measurements indicate "threshold voltages" ranging from approximately 20 to 100 V/micron.

  1. Polycystalline silicon thin films for electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Jaeger, Christian Claus

    2012-01-15

    with an activation energy of E{sub A}{sup poly-Si}=1.1 eV. By long-lasting tempering or a short high-temperature step finally the stable layer configuration substrate/Al+Si islands(hillocks)/poly-Si can be reached (E{sub A}{sup hillocks}=2.4 eV). The further main topic of this thesis is the study of the applicability of the poly-silicon layers fabricated by means of the ALILE and R-ALILE process for electronic applications. First thin-film transistors were studied. Additionally thin-film solar cells with microcrystalline silicon as absorber material on polycrystalline R-ALILE seed layers were fabricated. Finally the suitedness of the fabricated poly-silicon layers for crytographic applications were studied.

  2. Digitisation of electron microscope films: Six useful tests applied to three film scanners

    International Nuclear Information System (INIS)

    Henderson, R.; Cattermole, D.; McMullan, G.; Scotcher, S.; Fordham, M.; Amos, W.B.; Faruqi, A.R.

    2007-01-01

    A series of simple tests have been used to measure the performance of flat-bed film scanners suitable for digitisation of electron micrographs. Two of the film scanners evaluated are commercially available and one has been constructed in the laboratory paying special attention to the needs of the electron microscopist. The tests may be useful for others

  3. Characterization of functional LB films using electron spin resonance spectroscopy

    International Nuclear Information System (INIS)

    Kuroda, Shin-ichi

    1995-01-01

    The role of ESR spectroscopy in the characterization of functional LB films is discussed. Unpaired electrons in LB films are associated with isolated radical molecules produced by charge transfer, paramagnetic metallic ions such as Cu 2+ , strongly interacting spins in the mixed valence states in charge-transfer salts, and so on. These spins often manifest the functions of materials. They can also act as microscopic probes in the ESR analysis devoted for the elucidation of characteristic properties of LB films. In structural studies, ESR is of particular importance in the analysis of molecular orientation of LB films. ESR can unambiguously determine the orientation of molecules through g-value anisotropy: different g value, different resonance field. Two types of new control methods of molecular orientation in LB films originated from the ESR analysis: study of in-plane orientation in dye LB films which led to the discovery of flow-orientation effect, and observation of drastic change of orientation of Cu-porphyrin in LB films using the trigger molecule, n-hexatriacontane. In the studies of electronic properties, hyperfine interactions between electron and nuclear spins provide information about molecular orbitals and local structures. Stable isotopes have been successfully applied to the stable radicals in merocyanine LB films to identify hyperfine couplings. In conducting LB films composed of charge-transfer salts, quasi-one-dimensional antiferromagnetism in semiconducting films and spin resonance of conduction electrons in metallic films are observed. Results provide microscopic evidence for the development of columnar structures of constituent molecules. Development of new functional LB films may provide more cases where ESR spectroscopy will clarify the nature of such films. (author)

  4. Starch Characteristics Linked to Gluten-Free Products

    Directory of Open Access Journals (Sweden)

    Stefan W. Horstmann

    2017-04-01

    Full Text Available The increasing prevalence of coeliac disease (CD and gluten-related disorders has led to increasing consumer demand for gluten-free products with quality characteristics similar to wheat bread. The replacement of gluten in cereal-based products remains a challenge for scientists, due to its unique role in network formation, which entraps air bubbles. When gluten is removed from a flour, starch is the main component left. Starch is used as gelling, thickening, adhesion, moisture-retention, stabilizing, film forming, texturizing and anti-staling ingredient. The extent of these properties varies depending on the starch source. The starches can additionally be modified increasing or decreasing certain properties of the starch, depending on the application. Starch plays an important role in the formulation of bakery products and has an even more important role in gluten-free products. In gluten-free products, starch is incorporated into the food formulation to improve baking characteristics such as the specific volume, colour and crumb structure and texture. This review covers a number of topics relating to starch; including; an overview of common and lesser researched starches; chemical composition; morphology; digestibility; functionality and methods of modification. The emphasis of this review is on starch and its properties with respect to the quality of gluten-free products.

  5. Starch Characteristics Linked to Gluten-Free Products.

    Science.gov (United States)

    Horstmann, Stefan W; Lynch, Kieran M; Arendt, Elke K

    2017-04-06

    The increasing prevalence of coeliac disease (CD) and gluten-related disorders has led to increasing consumer demand for gluten-free products with quality characteristics similar to wheat bread. The replacement of gluten in cereal-based products remains a challenge for scientists, due to its unique role in network formation, which entraps air bubbles. When gluten is removed from a flour, starch is the main component left. Starch is used as gelling, thickening, adhesion, moisture-retention, stabilizing, film forming, texturizing and anti-staling ingredient. The extent of these properties varies depending on the starch source. The starches can additionally be modified increasing or decreasing certain properties of the starch, depending on the application. Starch plays an important role in the formulation of bakery products and has an even more important role in gluten-free products. In gluten-free products, starch is incorporated into the food formulation to improve baking characteristics such as the specific volume, colour and crumb structure and texture. This review covers a number of topics relating to starch; including; an overview of common and lesser researched starches; chemical composition; morphology; digestibility; functionality and methods of modification. The emphasis of this review is on starch and its properties with respect to the quality of gluten-free products.

  6. Effects of gliadin addition on the rheological, microscopic and thermal characteristics of wheat gluten.

    Science.gov (United States)

    Khatkar, B S; Barak, Sheweta; Mudgil, Deepak

    2013-02-01

    In the present study, micro-structural, thermal and rheological changes in the gluten network upon addition of gliadins at 5% and 10% levels were investigated using scanning electron microscopy (SEM), thermo gravimetric analysis (TGA), differential scanning calorimetry (DSC) and dynamic rheometry. The addition of gliadins decreased the peak dough height inferring decrease in dough strength. The dough stability also decreased from 3.20 to 1.40 min upon addition of 10% gliadin to the base flour. The TGA profile and the glass transition behavior of the control gluten and gluten obtained from dough with gliadin added at 5% and 10% levels showed decrease in thermal stability. The SEM micrograph of the control gluten showed foam like protein matrix. As the gliadin percentage in the gluten was increased, the compactness of the gluten structure reduced considerably leading to the formation of a more open weak gluten network. Copyright © 2012 Elsevier B.V. All rights reserved.

  7. Electronic structure and lattice relaxations in quantum confined Pb films

    NARCIS (Netherlands)

    Mans, A.

    2005-01-01

    Epitaxial films that are only several atoms layers thick exhibit interesting properties associated with quantum confinement. The electrons form standing waves, just like a violin string, clamped at both ends. In ultrathin lead films, this so-called `quantum size effect' (QSE) alters the physical

  8. Gluten - Not a Friendly Protein

    OpenAIRE

    E Tafreshi; A Jafarzade Noghani; B Khairkhah; M Yazdani; S Seddighi; S khayam

    2014-01-01

    Introduction: Gluten is a protein found in grains.  Research has shown that the gluten that is in grains of wheat, barley, rye, and oats (to a lesser degree) is toxic to many individuals.  While gluten is essential for the make-up of these 4 grains, our bodies do not need it. Is it healthful?  The protein in today’s wheat is poorly digested and can be harmful.  An estimated 95% of prepared foods on the grocery shelves contain the toxic forms of gluten.   Non-Celiac Gluten Sensitivit...

  9. Microporous polyurethane-acrylamide film cured by electron beam irradiation

    International Nuclear Information System (INIS)

    Ando, Masayuki; Goto, Takakazu; Tsuchiya, Mitsuru; Uryu, Toshiyuki

    1988-01-01

    The morphology and aggregation structure of electron beam (EB)-cured microporous polyurethane-acrylamide film was investigated. The urethane-acrylamide prepolymer was synthesized by the reaction of poly(butylene adipate)diol, diphenylmethane diisocyanate, and N-(hydroxymethyl)acrylamide. It was found from scanning electron microscopy that the urethane-acrylamide film, which was prepared by using a methyl ethyl ketone and dimethylformamide (3:1 v/v) mixture as casting solvent, had a microporous structure with pore size of several micrometers, and that the morphology was fixed by EB irradiation. The pore volume of the EB-cured microporous film was determined to be about 460 mm 3 g -1 by mercury porosimetry. The micropores were not destroyed even after immersing in solvent, possibly because the cured film had high crystallinity and dense crosslinking. Moreover, it was found by X-ray photelectron spectroscopy that terminal portions of urethane-acrylamide were localized at the film surface. (author)

  10. Navigating the gluten-free boom.

    Science.gov (United States)

    Gaesser, Glenn A; Angadi, Siddhartha S

    2015-08-01

    Gluten-free diets have gained popularity with the public at a rate greater than would be expected based on the prevalence of gluten-related disorders such celiac disease, nonceliac gluten sensitivity, and wheat allergy. This article reviews gluten-related disorders, indications for gluten-free diets, and the possible health benefits of gluten. Despite the health claims for gluten-free eating, no published experimental evidence supports weight-loss with a gluten-free diet or suggests that the general population would benefit from avoiding gluten.

  11. Reactions induced by low energy electrons in cryogenic films

    International Nuclear Information System (INIS)

    Bass, A.D.; Sanche, L.

    2003-01-01

    We review recent research on reactions (including dissociation) initiated by low-energy electron bombardment of monolayer and multilayer molecular solids at cryogenic temperatures. With incident electrons of energies below 20 eV, dissociation is observed by the electron stimulated desorption (ESD) of anions from target films and is attributed to the processes of dissociative electron attachment (DEA) and to dipolar dissociation. It is shown that DEA to condensed molecules is sensitive to environmental factors such as the identity of co-adsorbed species and film morphology. The effects of image-charge induced polarization on cross-sections for DEA to CH3Cl are also discussed. Taking as examples, the electron-induced production of CO within multilayer films of methanol and acetone, it is shown that the detection of electronic excited states by high resolution electron energy loss spectroscopy can be used to monitor electron beam damage. In particular, the incident energy dependence of the CO indicates that below 19 eV, dissociation proceeds via the decay of transient negative ions (TNI) into electronically excited dissociative states. The electron induced dissociation of biomolecular targets is also considered, taking as examples the ribose analog tetrahydrofuran and DNA bases adenine and thymine, cytosine and guanine. The ESD of anions from such films also show dissociation via the formation of TNI. In multilayer molecular solids, fragment species resulting from dissociation, may react with neighboring molecules, as is demonstrated in anion ESD measurements from films containing O 2 and various hydrocarbon molecules. X-ray photoelectron spectroscopy measurements reported for electron irradiated monolayers of H 2 O and CF 4 on a Si - H passivated surface further show that DEA is an important initial step in the electron-induced chemisorption of fragment species

  12. Starch facilitates enzymatic wheat gluten hydrolysis

    NARCIS (Netherlands)

    Hardt, N.A.; Boom, R.M.; Goot, van der A.J.

    2015-01-01

    Wheat gluten can be hydrolyzed by either using (vital) wheat gluten or directly from wheat flour. This study investigates the influence of the presence of starch, the main component of wheat, on enzymatic wheat gluten hydrolysis. Wheat gluten present in wheat flour (WFG) and vital wheat gluten (VWG)

  13. Functional replacements for gluten

    NARCIS (Netherlands)

    Zannini, E.; Jones, J.M.; Renzetti, S.; Arendt, E.K.

    2012-01-01

    Celiac disease (CD) is an immune-mediated disease triggered in genetically susceptible individuals by ingested gluten from wheat, rye, barley, and other closely related cereal grains. Currently, the only therapy able to normalize the clinical and histological manifestation of the disease is a strict

  14. Sputtering of Thick Deuterium Films by KeV Electrons

    DEFF Research Database (Denmark)

    Thestrup Nielsen, Birgitte; Svendsen, Winnie Edith; Schou, Jørgen

    1994-01-01

    Sputtering of thick films of solid deuterium up to several μm by keV electrons is reported for the first time. The sputtering yield increases within a narrow range of thicknesses around 1.6 μm by about 2 orders of magnitude for 1.5 keV electrons. A similar behavior has not been observed for ion...

  15. Characterization of Polycaprolactone Films Biodeterioration by Scanning Electron Microscopy

    Czech Academy of Sciences Publication Activity Database

    Hrubanová, Kamila; Voberková, S.; Hermanová, S.; Krzyžánek, Vladislav

    2014-01-01

    Roč. 20, S3 (2014), s. 1950-1951 ISSN 1431-9276 R&D Projects: GA MŠk EE.2.3.20.0103; GA MŠk(CZ) LO1212 Institutional support: RVO:68081731 Keywords : polycaprolactone films * biodeterioration * scanning electron microscopy Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.877, year: 2014

  16. Thermal Transport in Diamond Films for Electronics Thermal Management

    Science.gov (United States)

    2018-03-01

    AFRL-RY-WP-TR-2017-0219 THERMAL TRANSPORT IN DIAMOND FILMS FOR ELECTRONICS THERMAL MANAGEMENT Samuel Graham Georgia Institute of Technology MARCH... ELECTRONICS THERMAL MANAGEMENT 5a. CONTRACT NUMBER FA8650-15-C-7517 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 61101E 6. AUTHOR(S) Samuel...seeded sample (NRL 010516, Die A5). The NCD membrane and Al layer thicknesses, tNCD, were measured via transmission electron microscopy (TEM). The

  17. Electron-beam deposition of vanadium dioxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Marvel, R.E.; Appavoo, K. [Vanderbilt University, Interdisciplinary Materials Science Program, Nashville, TN (United States); Choi, B.K. [Vanderbilt University, Department of Electrical Engineering and Computer Science, Nashville, TN (United States); Nag, J. [Vanderbilt University, Department of Physics and Astronomy, Nashville, TN (United States); Haglund, R.F. [Vanderbilt University, Interdisciplinary Materials Science Program, Nashville, TN (United States); Vanderbilt University, Institute for Nanoscale Science and Engineering, Nashville, TN (United States); Vanderbilt University, Department of Physics and Astronomy, Nashville, TN (United States)

    2013-06-15

    Developing a reliable and efficient fabrication method for phase-transition thin-film technology is critical for electronic and photonic applications. We demonstrate a novel method for fabricating polycrystalline, switchable vanadium dioxide thin films on glass and silicon substrates and show that the optical switching contrast is not strongly affected by post-processing annealing times. The method relies on electron-beam evaporation of a nominally stoichiometric powder, followed by fast annealing. As a result of the short annealing procedure we demonstrate that films deposited on silicon substrates appear to be smoother, in comparison to pulsed laser deposition and sputtering. However, optical performance of e-beam evaporated film on silicon is affected by annealing time, in contrast to glass. (orig.)

  18. High-Tc film development for electronic applications

    International Nuclear Information System (INIS)

    Talvacchio, J.; Wagner, G.R.

    1990-01-01

    In this paper, the authors describe the requirements and status of high-T c superconductor (HTS) films for the development of electronic applications with an emphasis on passive microwave devices. One of the most general requirements, a low rf Surface resistance relative to Cu, has been achieved in films of several different HTS compounds. However the best films, made of YBa 2 Cu 3 O 7 (YBCO) by any one of several techniques, have in common a residual surface resistance that is much greater than predicted by conventional superconductivity theory. Improvement in films is also limited by the current size and selection of single-crystal substrate materials. Other issues that must be resolved to develop a full integrated circuit technology for HTS are substrate heating during film deposition, deposited epitaxial insulators, and determination of which interfaces in a multilevel circuit must be formed in situ

  19. Studies on functional polymer films utilizing low energy electron beam

    International Nuclear Information System (INIS)

    Ando, Masayuki

    1992-01-01

    Also in adhesives and tackifiers, with the expansion of the fields of application, the required characteristics have become high grade and complex. As one of them, the instantaneous hardening of adhesives can be taken up. In the field of lamination works, the low energy type electron beam accelerators having the linear filament of accelerating voltage below 300 kV were developed in 1970s, and the interest in the development of electron beam-handened adhesives has heightend. The authors have carried out research aiming at heightening the functions of the polymer films obtained by electron beam hardening reaction, and developed the adhesives. In this report, the features of electron beam hardening reaction, the structure and properties of electron beam-hardened polymer films and the molecular design of electron beam-hardened monomer oligomers are described. The feature of electron beam hardening reaction is the cross-linking of high degree as the structure of oligomers is maintained. By controlling the structure at the time of electron beam hardening, the heightening of the functions of electron beam-hardened polymer films is feasible. (K.I.)

  20. Electron grafted barrier coatings for packaging film modification

    International Nuclear Information System (INIS)

    Rangwalla, I.J.; Nablo, S.V.

    1993-01-01

    The O 2 barrier performance of organosilane films, coated, dried and electron beam grafted to polyolefin film has been studied. Excellent anti-scalping properties based upon limonene (dipentene) transmission measurements have also been observed. Results are also reported on O 2 permeability reduction when the process is applied to common barrier polymers such as EVOH and acrylonitrile. Experience with its in-line application on LDPE is discussed. (author)

  1. Fluorinated graphene films with graphene quantum dots for electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Antonova, I. V., E-mail: antonova@isp.nsc.ru [Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Nebogatikova, N. A.; Prinz, V. Ya. [Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Novosibirsk 630090 (Russian Federation)

    2016-06-14

    This work analyzes carrier transport, the relaxation of non-equilibrium charge, and the electronic structure of fluorinated graphene (FG) films with graphene quantum dots (GQDs). The FG films with GQDs were fabricated by means of chemical functionalization in an aqueous solution of hydrofluoric acid. High fluctuations of potential relief inside the FG barriers have been detected in the range of up to 200 mV. A phenomenological expression that describes the dependence of the time of non-equilibrium charge emission from GQDs on quantum confinement levels and film thickness (potential barrier parameters between GQDs) is suggested. An increase in the degree of functionalization leads to a decrease in GQD size, the removal of the GQD effect on carrier transport, and the relaxation of non-equilibrium charge. The study of the electronic properties of FG films with GQDs has revealed a unipolar resistive switching effect in the films with a relatively high degree of fluorination and a high current modulation (up to ON/OFF ∼ 10{sup 4}–10{sup 5}) in transistor-like structures with a lower degree of fluorination. 2D films with GQDs are believed to have considerable potential for various electronic applications (nonvolatile memory, 2D connections with optical control and logic elements).

  2. Film dosimetry of small elongated electron beams for treatment planning

    International Nuclear Information System (INIS)

    Niroomand-Rad, A.

    1989-01-01

    The characteristics of 5, 7, 10, 12, 15, and 18 Mev electron beams for small elongated fields of dimensions L x W (where L=1, 2, 3, 4, 5, and 10 cm; and W=1, 2, 3, 4, 5, and 10 cm) have been studied. Film dosimetry and parallel-plate ion chamber measurements have been used to obtain various dose parameters. Selective results of a series of systematic measurements for central axis depth dose data, uniformity index, field flatness, and relative output factors of small elongated electron beams are reported. The square-root method is employed to predict the beam data of small elongated electron fields from corresponding small square electron fields using film dosimetry. The single parameter area/perimeter radio A/P is used to characterize the relative output factors of elongated electron beams. It is our conclusion that for clinical treatment planning square-root method may be applied with caution in determining the beam characteristics of small elongated electron fields from film dosimetry. The calculated and estimated relative output factors from square-root method and A/P ratio are in good agreement and show agreement to within 1% with the measured film values

  3. Application of electron accelerator for thin film in Indonesia

    International Nuclear Information System (INIS)

    Danu, Sugiarto; Darsono, Dadang

    2004-01-01

    Electron accelerator is widely used for the crosslinking of wire and cable insulation, the treatment of heat shrinkable products, precuring of tire components, and the sterilization of medical products. Research and development the use of electron accelerator for thin film in Indonesia covered radiation curing of surface coating, crosslinking of poly (butylenes succinate), crosslinking of wire, cable and heat shrinkable, sterilization of wound dressing, and prevulcanization of tire. In general, comparing with conventional method, electron beam processing have some advantages, such as, less energy consumption, much higher production rate, processing ability at ambient temperature and environmental friendly. Indonesia has a great potential to develop the application of electron accelerator, due to the remarkable growth industrial sector, the abundant of natural resources and the increasing demand of the high quality products. This paper describes the activities concerning with R and D, and application of electron accelerator for processing of thin film. (author)

  4. Nanostructured hybrid films containing nanophosphor: Fabrication and electronic spectral properties

    Energy Technology Data Exchange (ETDEWEB)

    Camacho, S.A. [Instituto de Biociencias, Letras e Ciencias Exatas, UNESP - Univ Estadual Paulista, Rua Cristovao Colombo, 2265, 15054-000 Sao Jose do Rio Preto, SP (Brazil); Aoki, P.H.B.; Constantino, C.J.L. [Faculdade de Ciencias e Tecnologia, UNESP - Univ Estadual Paulista, Rua Roberto Simonsen, 305, 19060-900 Presidente Prudente, SP (Brazil); Aroca, R.F. [Materials and Surface Science Group, University of Windsor, Windsor, Ont., Canada N9B3P4 (Canada); Pires, A.M., E-mail: anapires@fct.unesp.br [Faculdade de Ciencias e Tecnologia, UNESP - Univ Estadual Paulista, Rua Roberto Simonsen, 305, 19060-900 Presidente Prudente, SP (Brazil)

    2012-11-15

    Highlights: Black-Right-Pointing-Pointer Hybrid film containing the cationic polyelectrolyte PAH and Y{sub 2}O{sub 3}: Er, Yb nanophosphor. Black-Right-Pointing-Pointer LbL film growth was monitored by absorbance x concentration in UV-Vis absorption. Black-Right-Pointing-Pointer FTIR indicated existence of secondary interactions between PAH - nanophosphor layers. Black-Right-Pointing-Pointer The morphology and the spatial distribution of the LbL film were analyzed by Raman. Black-Right-Pointing-Pointer We observed intense electronic emission lines from doping ions in the micro-Raman. - Abstract: The intensive research of the optical properties of rare-earth ions is due to the high quantum efficiency of their emission, very narrow bands, and excellent fluorescence monochromaticity. The photoluminescence data presented here show that the nanophosphor remains a green emitter in Layer-by-Layer (LbL) films leading to potential application in optical devices or biological labeling. The LbL technique, an established method for thin film fabrication with molecular architecture control, is used in the manufacture of a hybrid film containing the cationic polyelectrolyte poly (allylamine hydrochloride) (PAH) and Y{sub 2}O{sub 3}: Er, Yb nanophosphor. The spectroscopic properties of this luminescent nanomaterial are extracted from the spectral data of the powder, cast film and LbL films. The growth of the LbL film was monitored by absorbance versus concentration plots in ultraviolet-visible (UV-Vis) absorption spectroscopy. The presence of both PAH and nanophosphor in the LbL film was confirmed by Fourier transform infrared (FTIR) absorption spectroscopy. The FTIR data also ruled out the existence of chemical interactions between the PAH and nanophosphor layers, which means that secondary interactions (like Van der Waals forces) might be the driving forces for LbL film growth. The morphology and the spatial distribution of the LbL film components along the film surface were

  5. Gluten intake and gluten-free diet in the Netherlands

    NARCIS (Netherlands)

    Hopman, Geertruida Dorothea

    2008-01-01

    Celiac disease is an intolerance to dietary gluten in genetically predisposed individuals, leading to alterations of the small bowel mucosa. The treatment consists of a life-long, gluten-free diet. The aims of this thesis were to measure some of the environmental factors considered to play a role

  6. Ionic molecular films. Applications. 3. Electron beam stimulated enhanced adherence

    Energy Technology Data Exchange (ETDEWEB)

    Baldacchini, G; Montereali, R M; Scavarda do Carmo, L C

    1989-11-01

    This paper reports on the advantages of the use of the technique of electron beam lithography to imprint enhanced sensitive patterns on ionic molecular substrates (bulk crystals or films). With this technique, localized superficial defects are produced which change the chemical properties of surfaces. Sensitized surfaces react with absorbates providing enhanced adherence of such substances. The use of spacially controlled electron beams allows the construction of small (sub-micron) feature chemical and very localized enhanced adherence of absorbates.

  7. Chemical Vapor-Deposited (CVD) Diamond Films for Electronic Applications

    Science.gov (United States)

    1995-01-01

    Diamond films have a variety of useful applications as electron emitters in devices such as magnetrons, electron multipliers, displays, and sensors. Secondary electron emission is the effect in which electrons are emitted from the near surface of a material because of energetic incident electrons. The total secondary yield coefficient, which is the ratio of the number of secondary electrons to the number of incident electrons, generally ranges from 2 to 4 for most materials used in such applications. It was discovered recently at the NASA Lewis Research Center that chemical vapor-deposited (CVD) diamond films have very high secondary electron yields, particularly when they are coated with thin layers of CsI. For CsI-coated diamond films, the total secondary yield coefficient can exceed 60. In addition, diamond films exhibit field emission at fields orders of magnitude lower than for existing state-of-the-art emitters. Present state-of-the-art microfabricated field emitters generally require applied fields above 5x10^7 V/cm. Research on field emission from CVD diamond and high-pressure, high-temperature diamond has shown that field emission can be obtained at fields as low as 2x10^4 V/cm. It has also been shown that thin layers of metals, such as gold, and of alkali halides, such as CsI, can significantly increase field emission and stability. Emitters with nanometer-scale lithography will be able to obtain high-current densities with voltages on the order of only 10 to 15 V.

  8. Low energy electron beam processing of YBCO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chromik, Š., E-mail: stefan.chromik@savba.sk [Institute of Electrical Engineering, SAS, Dúbravská cesta 9, 841 04 Bratislava (Slovakia); Camerlingo, C. [CNR-SPIN, Istituto Superconduttori, Materiali Innovativi e Dispositivi, via Campi Flegrei 34, 80078 Pozzuoli (Italy); Sojková, M.; Štrbík, V.; Talacko, M. [Institute of Electrical Engineering, SAS, Dúbravská cesta 9, 841 04 Bratislava (Slovakia); Malka, I.; Bar, I.; Bareli, G. [Department of Physics, Ben Gurion University of the Negev, P.O.B. 653, 84105 Beer Sheva (Israel); Jung, G. [Department of Physics, Ben Gurion University of the Negev, P.O.B. 653, 84105 Beer Sheva (Israel); Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw (Poland)

    2017-02-15

    Highlights: • Improvement of superconducting properties of irradiated bridges under certain conditions. • 30 keV irradiation influence CuO{sub 2} planes as well as oxygen chains. • Direct confirmation of changes in oxygen chains using micro-Raman spectroscopy. • Possibility of electron writing. - Abstract: Effects of low energy 30 keV electron irradiation of superconducting YBa{sub 2}Cu{sub 3}O{sub 7−δ} thin films have been investigated by means of transport and micro-Raman spectroscopy measurements. The critical temperature and the critical current of 200 nm thick films initially increase with increasing fluency of the electron irradiation, reach the maximum at fluency 3 − 4 × 10{sup 20} electrons/cm{sup 2}, and then decrease with further fluency increase. In much thinner films (75 nm), the critical temperature increases while the critical current decreases after low energy electron irradiation with fluencies below 10{sup 20} electrons/cm{sup 2}. The Raman investigations suggest that critical temperature increase in irradiated films is due to healing of broken Cu−O chains that results in increased carrier’s concentration in superconducting CuO{sub 2} planes. Changes in the critical current are controlled by changes in the density of oxygen vacancies acting as effective pinning centers for flux vortices. The effects of low energy electron irradiation of YBCO turned out to result from a subtle balance of many processes involving oxygen removal, both by thermal activation and kick-off processes, and ordering of chains environment by incident electrons.

  9. Radiation from silver films bombarded by low-energy electrons

    International Nuclear Information System (INIS)

    Chung, M.S.; Callcott, T.A.; Kretschmann, E.; Arakawa, E.T.

    1980-01-01

    Emission spectra from Ag films irradiated by low energy electrons (20-1500 eV) have been measured, and the results compared with theory. For relatively smooth films, two peaks in the spectra are resolved. One at 3.73 eV, the volume plasmon energy, is attributed to transition radiation and/or bremsstrahlung. The second, at about 3.60 eV, is very sensitive to surface roughness in both position and magnitude and is produced by roughness-coupled radiation from surface plasmons. For rough films, the roughness-coupled radiation dominates the emission. In addition to spectral shapes, the polarization of the radiation and its intensity as a function of electron energy were measured. The experimental results are compared with new calculations of roughness-coupled emission which account for most of our observations. They indicate that high wavevector roughness components play the dominant role in the emission process. (orig.)

  10. Electron beam induced modification of poly(ethylene terephthalate) films

    International Nuclear Information System (INIS)

    Vasiljeva, I.V.; Mjakin, S.V.; Makarov, A.V.; Krasovsky, A.N.; Varlamov, A.V.

    2006-01-01

    Electron beam processing of poly(ethylene terephthalate) (PET) films is found to promote significant changes in the melting heat, intrinsic viscosity and polymer film-liquid (water, isooctane and toluene) boundary surface tension. These properties are featured with several maximums depending on the absorbed dose and correlating with the modification of PET surface functionality. Studies using adsorption of acid-base indicators and IR-spectroscopy revealed that the increase of PET surface hydrophilicity is determined by the oxidation of methylene and methyne groups. Electron beam treatment of PET films on the surface of N-vinylpyrrolidone aqueous solution provided graft copolymerization with this comonomer at optimum process parameters (energy 700 keV, current 1 mA, absorbed dose 50 kGy)

  11. Electron beam induced modification of poly(ethylene terephthalate) films

    Energy Technology Data Exchange (ETDEWEB)

    Vasiljeva, I.V. [Technology Center RADIANT, 10, Kurchatova Str., 194223 St. Petersburg (Russian Federation)]. E-mail: radiant@skylink.spb.ru; Mjakin, S.V. [Technology Center RADIANT, 10, Kurchatova Str., 194223 St. Petersburg (Russian Federation); Makarov, A.V. [St.-Petersburg State University of Cinema and Television, 13, ul. Pravdy, 191126 St. Petersburg (Russian Federation); Krasovsky, A.N. [St.-Petersburg State University of Cinema and Television, 13, ul. Pravdy, 191126 St. Petersburg (Russian Federation); Varlamov, A.V. [St.-Petersburg State University of Cinema and Television, 13, ul. Pravdy, 191126 St. Petersburg (Russian Federation)

    2006-10-15

    Electron beam processing of poly(ethylene terephthalate) (PET) films is found to promote significant changes in the melting heat, intrinsic viscosity and polymer film-liquid (water, isooctane and toluene) boundary surface tension. These properties are featured with several maximums depending on the absorbed dose and correlating with the modification of PET surface functionality. Studies using adsorption of acid-base indicators and IR-spectroscopy revealed that the increase of PET surface hydrophilicity is determined by the oxidation of methylene and methyne groups. Electron beam treatment of PET films on the surface of N-vinylpyrrolidone aqueous solution provided graft copolymerization with this comonomer at optimum process parameters (energy 700 keV, current 1 mA, absorbed dose 50 kGy)

  12. Study of electron transmission through thin metallic films by the electron moessbauer spectroscopy

    International Nuclear Information System (INIS)

    Babikova, Yu.F.; Vakar, O.M.; Gruzin, O.M.; Petrikin, Yu.V.

    1983-01-01

    Results of the experimental study of the transmission of conversion electrons through aluminium, iron, tin and gold films are presented. Absorption of resonance electrons of the Moessbauer nuclide 57 Fe, formed during target irradiation with γ-quanta of 57 Co source in chromium matrix has been studied. It is asserted that absorption of conversion electrons in films of different elements is similar; at that, like in the case of β-particles, the law of absorption of resonance electrons, emitted from the flat layer, is exponential For conversion electrons of the Moessbauer nuclide 57 Fe the absorption coefficient is (0.025+-0.002) cm 2 /μg, which in the case of iron absorbing film corresponds to (20.0+-1.0)x10 4 cm -1

  13. Hydrophobicity of electron beam modified surface of hydroxyapatite films

    Energy Technology Data Exchange (ETDEWEB)

    Gregor, M., E-mail: gregor@fmph.uniba.sk [Department of Experimental Physics, Faculty of Mathematics, Physics and Informatics, Comenius University, 84248 Bratislava (Slovakia); Plecenik, T. [Department of Experimental Physics, Faculty of Mathematics, Physics and Informatics, Comenius University, 84248 Bratislava (Slovakia); Tofail, S.A.M. [Materials & Surface Science Institute, University of Limerick, Limerick (Ireland); Zahoran, M.; Truchly, M. [Department of Experimental Physics, Faculty of Mathematics, Physics and Informatics, Comenius University, 84248 Bratislava (Slovakia); Vargova, M. [Department of Inorganic Chemistry, Faculty of Natural Sciences, Comenius University, 84215 Bratislava (Slovakia); Laffir, F. [Materials & Surface Science Institute, University of Limerick, Limerick (Ireland); Plesch, G. [Department of Inorganic Chemistry, Faculty of Natural Sciences, Comenius University, 84215 Bratislava (Slovakia); Kus, P.; Plecenik, A. [Department of Experimental Physics, Faculty of Mathematics, Physics and Informatics, Comenius University, 84248 Bratislava (Slovakia)

    2015-05-15

    Highlights: • Surface potential of hydroxyapatite films were modified by focused electron beam. • Micron-sized domains of modified surface potential were created. • Wettability and surface free energy of the irradiated areas was studied. • Possible mechanisms of increased surface hydrophobicity are discussed. - Abstract: Arrays of micron-sized domains of modified surface potential were created on hydroxyapatite films by mid-energy (20 keV) electron beam irradiation available in a laboratory scanning electron microscope. The dosage of electron beam was varied between 10{sup −3} and 10{sup 3} μC/cm{sup 2} to inject charge into the film surface. Contrary to the conventional electrowetting theory, the dosage of injected charge used in creating such microdomains caused a gradual increase of the water contact angle from 57° to 93° due to the elimination of the polar component of the surface free energy. Surface contamination by carbonaceous species can be held only partially responsible for such behavior at lower dosage of electron beam. A transfer of free surface charge to water and an electron beam induced disruption of polar orientation of OH ions have been attributed to be influencial factors in the overall dewetting behavior.

  14. Electron confinement in thin metal films. Structure, morphology and interactions

    Energy Technology Data Exchange (ETDEWEB)

    Dil, J.H.

    2006-05-15

    This thesis investigates the interplay between reduced dimensionality, electronic structure, and interface effects in ultrathin metal layers (Pb, In, Al) on a variety of substrates (Si, Cu, graphite). These layers can be grown with such a perfection that electron confinement in the direction normal to the film leads to the occurrence of quantum well states in their valence bands. These quantum well states are studied in detail, and their behaviour with film thickness, on different substrates, and other parameters of growth are used here to characterise a variety of physical properties of such nanoscale systems. The sections of the thesis deal with a determination of quantum well state energies for a large data set on different systems, the interplay between film morphology and electronic structure, and the influence of substrate electronic structure on their band shape; finally, new ground is broken by demonstrating electron localization and correlation effects, and the possibility to measure the influence of electron-phonon coupling in bulk bands. (orig.)

  15. Properties of Commercial PVC Films with Respect to Electron Dosimetry

    DEFF Research Database (Denmark)

    Miller, Arne; Liqing, Xie

    The properties of three commercially available polyvinyl chloride (PVC) film supplies and one made without additives were tested with respect to their application as routine dose monitors at electron accelerators. Dose fractionation was found to increase the response and the post-irradiation heat...

  16. Electron microprobe analysis of tantalum--nitride thin films

    International Nuclear Information System (INIS)

    Stoltz, D.L.; Starkey, J.P.

    1979-06-01

    Quantitative chemical analysis of 500- and 2000-angstrom tantalum--nitride films on glass substrates has been accomplished using an electron microprobe x-ray analyzer. In order to achieve this analysis, modifications to the microprobe were necessary. A description of the calibration procedure, the method of analysis, and the quantitative results are discussed

  17. Front and backside processed thin film electronic devices

    Science.gov (United States)

    Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.; Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang

    2010-10-12

    This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

  18. Ferromagnetism and temperature-dependent electronic structure in metallic films

    International Nuclear Information System (INIS)

    Herrmann, T.

    1999-01-01

    In this work the influence of the reduced translational symmetry on the magnetic properties of thin itinerant-electron films and surfaces is investigated within the strongly correlated Hubbard model. Firstly, the possibility of spontaneous ferromagnetism in the Hubbard model is discussed for the case of systems with full translational symmetry. Different approximation schemes for the solution of the many-body problem of the Hubbard model are introduced and discussed in detail. It is found that it is vital for a reasonable description of spontaneous ferromagnetism to be consistent with exact results concerning the general shape of the single-electron spectral density in the limit of strong Coulomb interaction between the electrons. The temperature dependence of the ferromagnetic solutions is discussed in detail by use of the magnetization curves as well as the spin-dependent quasi particle spectrum. For the investigation of thin films and surfaces the approximation schemes for the bulk system have to be generalized to deal with the reduced translational symmetry. The magnetic behavior of thin Hubbard films is investigated by use of the layer dependent magnetization as a function of temperature as well as the thickness of the film. The Curie-temperature is calculated as a function of the film thickness. Further, the magnetic stability at the surface is discussed in detail. Here it is found that for strong Coulomb interaction the magnetic stability at finite temperatures is reduced at the surface compared to the inner layers. This observation clearly contradicts the well-known Stoner picture of band magnetism and can be explained in terms of general arguments which are based on exact results in the limit of strong Coulomb interaction. The magnetic behavior of the Hubbard films can be analyzed in detail by inspecting the local quasi particle density of states as well as the wave vector dependent spectral density. The electronic structure is found to be strongly spin

  19. 21 CFR 184.1322 - Wheat gluten.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 3 2010-04-01 2009-04-01 true Wheat gluten. 184.1322 Section 184.1322 Food and... Substances Affirmed as GRAS § 184.1322 Wheat gluten. (a) Wheat gluten (CAS Reg. No. 8002-80-0) is the principal protein component of wheat and consists mainly of gliadin and glutenin. Wheat gluten is obtained...

  20. How gluten properties are affected by pentosans

    NARCIS (Netherlands)

    Wang, M.; Vliet, T. van; Hamer, R.J.

    2004-01-01

    During the wet separation of starch and gluten, both water extractable pentosans (WEP) and water unextractable solids (WUS) have a negative effect on gluten yield. Gluten properties are also affected: the gluten becomes less extensible. In comparison to the control, addition of WUS or WEP resulted

  1. How gluten properties are effected by pentosans

    NARCIS (Netherlands)

    Wang, M.; Vliet, van T.; Hamer, R.J.

    2004-01-01

    During the wet separation of starch and gluten, both water extractable pentosans (WEP) and water unextractable solids (WUS) have a negative effect on gluten yield. Gluten properties are also affected: the gluten becomes less extensible. In comparison to the control, addition of WUS or WEP resulted

  2. Electron field emission from undoped and doped DLC films

    International Nuclear Information System (INIS)

    Chakhovskoi, A G; Evtukh, A A; Felter, T E; Klyui, N I; Kudzinovsky, S Y; Litovchenko, V G; Litvin, Y M

    1999-01-01

    Electron field emission and electrical conductivity of undoped and nitrogen doped DLC films have been investigated. The films were grown by the PE CVD method from CH(sub 4):H(sub 2) and CH(sub 4):H(sub 2):N(sub 2) gas mixtures, respectively. By varying nitrogen content in the gas mixture over the range 0 to 45%, corresponding concentrations of 0 to 8% (atomic) could be achieved in the films. Three different gas pressures were used in the deposition chamber: 0.2, 0.6 and 0.8 Torr. Emission current measurements were performed at approximately 10(sup -6) Torr using the diode method with emitter-anode spacing set at 20(micro)m. The current - voltage characteristics of the Si field electron emission arrays covered with DLC films show that threshold voltage (V(sub th)) varies in a complex manner with nitrogen content. As a function of nitrogen content, V(sub th) initially increases rapidly, then decreases and finally increases again for the highest concentration. Corresponding Fowler-Nordheim (F-N) plots follow F-N tunneling over a wide range. The F-N plots were used for determination of the work function, threshold voltage, field enhancement factor and effective emission area. For a qualitative explanation of experimental results, we treat the DLC film as a diamond-like (sp(sup 3) bonded) matrix with graphite-like inclusions

  3. Modification of C60/C70+Pd film structure under electric field influence during electron emission

    International Nuclear Information System (INIS)

    Czerwosz, E.; Dluzewski, P.; Kozlowski, M.

    2001-01-01

    We investigated the modification of structure of C 60 /C 70 +Pd films during cold electron emission from these films. Films were obtained by vacuum thermal deposition from two sources and were characterised before and after electron emission measurements by transmission electron microscopy and electron diffraction. Films were composed of nanocrystalline Pd objects dispersed in carbon/fullerenes matrix. I-V characteristics for electron emission were obtained in diode geometry with additionally applied voltage along the film surface. The modification of film structure occurred under applied electric field and the grouping of Pd nano crystals into bigger objects was observed

  4. Thin film transistors for flexible electronics: Contacts, dielectrics and semiconductors

    KAUST Repository

    Quevedo-López, Manuel Angel Quevedo

    2011-06-01

    The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, radiation detectors, etc. In this paper, we review the impact of gate dielectrics, contacts and semiconductor materials on thin film transistors for flexible electronics applications. We present our recent results to fully integrate hybrid complementary metal oxide semiconductors comprising inorganic and organic-based materials. In particular, we demonstrate novel gate dielectric stacks and semiconducting materials. The impact of source and drain contacts on device performance is also discussed. Copyright © 2011 American Scientific Publishers.

  5. Thin film transistors for flexible electronics: Contacts, dielectrics and semiconductors

    KAUST Repository

    Quevedo-Ló pez, Manuel Angel Quevedo; Wondmagegn, Wudyalew T.; Alshareef, Husam N.; Ramí rez-Bon, Rafael; Gnade, Bruce E.

    2011-01-01

    The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, radiation detectors, etc. In this paper, we review the impact of gate dielectrics, contacts and semiconductor materials on thin film transistors for flexible electronics applications. We present our recent results to fully integrate hybrid complementary metal oxide semiconductors comprising inorganic and organic-based materials. In particular, we demonstrate novel gate dielectric stacks and semiconducting materials. The impact of source and drain contacts on device performance is also discussed. Copyright © 2011 American Scientific Publishers.

  6. Simulation model for electron irradiated IGZO thin film transistors

    Science.gov (United States)

    Dayananda, G. K.; Shantharama Rai, C.; Jayarama, A.; Kim, Hyun Jae

    2018-02-01

    An efficient drain current simulation model for the electron irradiation effect on the electrical parameters of amorphous In-Ga-Zn-O (IGZO) thin-film transistors is developed. The model is developed based on the specifications such as gate capacitance, channel length, channel width, flat band voltage etc. Electrical parameters of un-irradiated IGZO samples were simulated and compared with the experimental parameters and 1 kGy electron irradiated parameters. The effect of electron irradiation on the IGZO sample was analysed by developing a mathematical model.

  7. Electron cyclotron resonance microwave ion sources for thin film processing

    International Nuclear Information System (INIS)

    Berry, L.A.; Gorbatkin, S.M.

    1990-01-01

    Plasmas created by microwave absorption at the electron cyclotron resonance (ECR) are increasingly used for a variety of plasma processes, including both etching and deposition. ECR sources efficiently couple energy to electrons and use magnetic confinement to maximize the probability of an electron creating an ion or free radical in pressure regimes where the mean free path for ionization is comparable to the ECR source dimensions. The general operating principles of ECR sources are discussed with special emphasis on their use for thin film etching. Data on source performance during Cl base etching of Si using an ECR system are presented. 32 refs., 5 figs

  8. Electronic transport properties of nanostructured MnSi-films

    Science.gov (United States)

    Schroeter, D.; Steinki, N.; Scarioni, A. Fernández; Schumacher, H. W.; Süllow, S.; Menzel, D.

    2018-05-01

    MnSi, which crystallizes in the cubic B20 structure, shows intriguing magnetic properties involving the existence of skyrmions in the magnetic phase diagram. Bulk MnSi has been intensively investigated and thoroughly characterized, in contrast to MnSi thin film, which exhibits widely varying properties in particular with respect to electronic transport. In this situation, we have set out to reinvestigate the transport properties in MnSi thin films by means of studying nanostructure samples. In particular, Hall geometry nanostructures were produced to determine the intrinsic transport properties.

  9. Thin dielectric film thickness determination by advanced transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Diebold, A.C.; Foran, B.; Kisielowski, C.; Muller, D.; Pennycook, S.; Principe, E.; Stemmer, S.

    2003-09-01

    High Resolution Transmission Electron Microscopy (HR-TEM) has been used as the ultimate method of thickness measurement for thin films. The appearance of phase contrast interference patterns in HR-TEM images has long been confused as the appearance of a crystal lattice by non-specialists. Relatively easy to interpret crystal lattice images are now directly observed with the introduction of annular dark field detectors for scanning TEM (STEM). With the recent development of reliable lattice image processing software that creates crystal structure images from phase contrast data, HR-TEM can also provide crystal lattice images. The resolution of both methods was steadily improved reaching now into the sub Angstrom region. Improvements in electron lens and image analysis software are increasing the spatial resolution of both methods. Optimum resolution for STEM requires that the probe beam be highly localized. In STEM, beam localization is enhanced by selection of the correct aperture. When STEM measurement is done using a highly localized probe beam, HR-TEM and STEM measurement of the thickness of silicon oxynitride films agree within experimental error. In this paper, the optimum conditions for HR-TEM and STEM measurement are discussed along with a method for repeatable film thickness determination. The impact of sample thickness is also discussed. The key result in this paper is the proposal of a reproducible method for film thickness determination.

  10. Hydrogel coating of RVNRL film by electron beam irradiation

    International Nuclear Information System (INIS)

    Chantara Thevy Ratnam; Khairul Zaman Hj, Mohd Dahlan; Fumio Yoshii; Keizo Makuuchi

    1996-01-01

    The tackiness properties of Radiation Vulcanized Natural Rubber Latex (RVNRL) film surfaces coated by various monomers have been investigated in order to understand the suitable hydrogels which reduce the tackiness of the film. In this context , different types of monomers namely, N-vinyl-2-pyrrolidone (NVP), N,N-dimethyl amino ethyl amide (DMAEA), acrylic acid (AAc), N-butyl acrylate (n-BA) and 2-hydroxyethyl methacrylate (HEMA) as well as monomer mixtures have been tried with varying degrees of success. It was found that coating the RVNRL with 80% HEMA/20% n-BA by irradiation at 80 kGy using low Energy Electron Beam gave remarkable reduction in surface tackiness of the RVNRL film. Several other attempts were made such as priming with acid and aluminum sulfate, mixing the aluminum sulfate into the monomer and dipping the partially wet RVNRL film into the monomer to enhance the wettability of he monomers with the film. Studies on surface topography revealed that the decrease in tackiness with coating is due to the increase of the surface roughness at 80 kGy, irradiation dose

  11. Cost analysis of low energy electron accelerator for film curing

    International Nuclear Information System (INIS)

    Ochi, Masafumi

    2003-01-01

    Low energy electron accelerators are recognized as one of the advanced curing means of converting processes for films and papers. In the last three years the price of the accelerator equipment has been greatly reduced. The targeted application areas are mainly processes of curing inks, coatings, and adhesives to make packaging materials. The operating cost analyses were made for electron beam (EB) processes over the conventional ones without EB. Then three new proposals for cost reduction of EB processes are introduced. Also being developed are new EB chemistries such as coatings, laminating adhesives and inks. EB processes give instantaneous cure and EB chemistries are basically non solvent causing less VOC emission to the environment. These developments of both equipment and chemistries might have a potential to change conventional packaging film industries. (author)

  12. Temperature dependence of electronic transport property in ferroelectric polymer films

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, X.L.; Wang, J.L., E-mail: jlwang@mail.sitp.ac.cn; Tian, B.B.; Liu, B.L.; Zou, Y.H.; Wang, X.D.; Sun, S.; Sun, J.L., E-mail: jlsun@mail.sitp.ac.cn; Meng, X.J.; Chu, J.H.

    2014-10-15

    Highlights: • The ferroelectric polymer was fabricated by Langmuir–Blodgett method. • The electrons as the dominant injected carrier were conformed in the ferroelectric polymer films. • The leakage current conduction mechanisms in ferroelectric polymer were investigated. - Abstract: The leakage current mechanism of ferroelectric copolymer of polyvinylidene fluoride with trifluoroethylene prepared by Langmuir–Blodgett was investigated in the temperature range from 100 K to 350 K. The electron as the dominant injected carrier was observed in the ferroelectric copolymer films. The transport mechanisms in copolymer strongly depend on the temperature and applied voltage. From 100 K to 200 K, Schottky emission dominates the conduction. With temperature increasing, the Frenkel–Poole emission instead of the Schottky emission to conduct the carrier transport. When the temperature gets to 260 K, the leakage current becomes independent of temperature, and the space charge limited current conduction was observed.

  13. Electron curing for high speed paper, film and foil converting

    International Nuclear Information System (INIS)

    Nablo, S.V.; Tripp, E.P.

    1979-01-01

    The status of self-shielded, compact electron processors for flexible web converting applications is reviewed. The uses of these units for a variety of laminating applications are described, with emphasis on the application techniques appropriate for low weight, (1 to 2 gm/m 2 ) 100% convertible adhesives. Performance data for electron cured adhesives with polyester/polyethylene systems is presented and compared with conventional urethane systems. The unique surface features of electron cured gravure coatings applied and cured at high speed are discussed, with reference to both paper and film substrates. An important advantage of electron curing of buried adhesive layers is the process quality control permitted by this 'all-electric' system. The performance characteristics of curing atmosphere control (inerting) for coatings are reviewed. Industrial experience with these processors has shown that effective inerting of coated flexible webs at speeds to 250 m/minute is both practical and economical. (author)

  14. The kinetics of low-temperature electron-phonon relaxation in a metallic film following instantaneous heating of the electrons

    International Nuclear Information System (INIS)

    Bezuglyi, A.I.; Shklovskii, V.A.

    1997-01-01

    The theoretical analysis of experiments on pulsed laser irradiation of metallic films sputtered on insulating supports is usually based on semiphenomenological dynamical equations for the electron and phonon temperatures, an approach that ignores the nonuniformity and the nonthermal nature of the phonon distribution function. In this paper we discuss a microscopic model that describes the dynamics of the electron-phonon system in terms of kinetic equations for the electron and phonon distribution functions. Such a model provides a microscopic picture of the nonlinear energy relaxation of the electron-phonon system of a rapidly heated film. We find that in a relatively thick film the energy relaxation of electrons consists of three stages: the emission of nonequilibrium phonons by 'hot' electrons, the thermalization of electrons and phonons due to phonon reabsorption, and finally the cooling of the thermalized electron-phonon system as a result of phonon exchange between film and substrate. In thin films, where there is no reabsorption of nonequilibrium phonons, the energy relaxation consists of only one stage, the first. The relaxation dynamics of an experimentally observable quantity, the phonon contribution to the electrical conductivity of the cooling film, is directly related to the dynamics of the electron temperature, which makes it possible to use the data of experiments on the relaxation of voltage across films to establish the electron-phonon and phonon-electron collision times and the average time of phonon escape from film to substrate

  15. Electron Microscopy Characterization of Vanadium Dioxide Thin Films and Nanoparticles

    Science.gov (United States)

    Rivera, Felipe

    Vanadium dioxide (VO_2) is a material of particular interest due to its exhibited metal to insulator phase transition at 68°C that is accompanied by an abrupt and significant change in its electronic and optical properties. Since this material can exhibit a reversible drop in resistivity of up to five orders of magnitude and a reversible drop in infrared optical transmission of up to 80%, this material holds promise in several technological applications. Solid phase crystallization of VO_2 thin films was obtained by a post-deposition annealing process of a VO_{x,x approx 2} amorphous film sputtered on an amorphous silicon dioxide (SiO_2) layer. Scanning electron microscopy (SEM) and electron-backscattered diffraction (EBSD) were utilized to study the morphology of the solid phase crystallization that resulted from this post-deposition annealing process. The annealing parameters ranged in temperature from 300°C up to 1000°C and in time from 5 minutes up to 12 hours. Depending on the annealing parameters, EBSD showed that this process yielded polycrystalline vanadium dioxide thin films, semi-continuous thin films, and films of isolated single-crystal particles. In addition to these films on SiO_2, other VO_2 thin films were deposited onto a-, c-, and r-cuts of sapphire and on TiO_2(001) heated single-crystal substrates by pulsed-laser deposition (PLD). The temperature of the substrates was kept at ˜500°C during deposition. EBSD maps and orientation imaging microscopy were used to study the epitaxy and orientation of the VO_2 grains deposited on the single crystal substrates, as well as on the amorphous SiO_2 layer. The EBSD/OIM results showed that: 1) For all the sapphire substrates analyzed, there is a predominant family of crystallographic relationships wherein the rutile VO_2{001} planes tend to lie parallel to the sapphire's {10-10} and the rutile VO_2{100} planes lie parallel to the sapphire's {1-210} and {0001}. Furthermore, while this family of

  16. The applications of electron accelerator. Liquid, thin film and gases

    International Nuclear Information System (INIS)

    Khairul Zaman Hj Mohd Dahlan; Kamaruddin Hashim; Zulkafli Ghazali

    2004-01-01

    As indicated by the results of this study, low energy electron beam accelerator of 200 keV to 500 keV can be utilized to irradiate thin hydrogel film in the range of 60 to 500 μm thickness. However, the industrial applications of this technology will depend on its applications. For thin films, cosmetic use such as faced mask is possible. The production of sago hydrogel for cosmetic used is in the process of commercialization in Malaysia. As for electron beam treatment of industrial wastewater in particular the effluent from the textile industry is still at infancy. Further work is necessary in order to have a base line data before the commercialization is taken place. Malaysia has also embarked on the electron beam treatment of flue gases and has completed the semi-pilot scale study by using 1.0 MeV electron accelerator voltage and 400 cum flue gas generated from diesel generator. This study was conducted together with the TNB Research, the research institute belongs to the electrical power company in Malaysia. For technology transfer and commercialization, MINT is planned to promote this technology to Independent Power Producers (IPP) in Malaysia. (author)

  17. ZnO Thin Film Electronics for More than Displays

    Science.gov (United States)

    Ramirez, Jose Israel

    Zinc oxide thin film transistors (TFTs) are investigated in this work for large-area electronic applications outside of display technology. A constant pressure, constant flow, showerhead, plasma-enhanced atomic layer deposition (PEALD) process has been developed to fabricate high mobility TFTs and circuits on rigid and flexible substrates at 200 °C. ZnO films and resulting devices prepared by PEALD and pulsed laser deposition (PLD) have been compared. Both PEALD and PLD ZnO films result in densely packed, polycrystalline ZnO thin films that were used to make high performance devices. PEALD ZnO TFTs deposited at 300 °C have a field-effect mobility of ˜ 40 cm2/V-s (and > 20 cm2/V-S deposited at 200 °C). PLD ZnO TFTs, annealed at 400 °C, have a field-effect mobility of > 60 cm2/V-s (and up to 100 cm2/V-s). Devices, prepared by either technique, show high gamma-ray radiation tolerance of up to 100 Mrad(SiO2) with only a small radiation-induced threshold voltage shift (VT ˜ -1.5 V). Electrical biasing during irradiation showed no enhanced radiation-induced effects. The study of the radiation effects as a function of material stack thicknesses revealed the majority of the radiation-induced charge collection happens at the semiconductor-passivation interface. A simple sheet-charge model at that interface can describe the radiation-induced charge in ZnO TFTs. By taking advantage of the substrate-agnostic process provided by PEALD, due to its low-temperature and excellent conformal coatings, ZnO electronics were monolithically integrated with thin-film complex oxides. Application-based examples where ZnO electronics provide added functionality to complex oxide-based devices are presented. In particular, the integration of arrayed lead zirconate titanate (Pb(Zr, Ti)O3 or PZT) thin films with ZnO electronics for microelectromechanical systems (MEMs) and deformable mirrors is demonstrated. ZnO switches can provide voltage to PZT capacitors with fast charging and slow

  18. Vibrational and electronic excitation of hexatriacontane thin films by low energy electron impact

    International Nuclear Information System (INIS)

    Vilar, M.R.; Schott, M.; Pfluger, P.

    1990-01-01

    Thin polycrystalline films of hexatriacontane (HTC) were irradiated with low energy (E=0.5--15 eV) electrons, and off-specular backscattered electron spectra were measured. Below E∼7 eV, single and multiple vibrational excitations only are observed, which relax the electrons down to the bottom of the HTC conduction band. Due to the negative electron affinity of HTC, thermal electrons are emitted into vacuum. Structure in the backscattered electron current at kinetic energies about 1.5 and 4 eV are associated to conduction band density of states. Above E∼7 eV, the dominant losses correspond to electronic excitations, excitons, or above a threshold (energy of the electron inside the HTC film) at 9.2±0.1 eV, electron--hole pair generation. The latter process is very efficient and reaches a yield of the order of one ∼11 eV. Evidence for chemical reaction above E∼4 eV is observed

  19. Nano-structured thin films : a Lorentz transmission electron microscopy and electron holography study

    NARCIS (Netherlands)

    Hosson, J.Th.M. de; Raedt, H.A. De; Zhong, ZY; Saka, H; Kim, TH; Holm, EA; Han, YF; Xie, XS

    2005-01-01

    This paper aims at applying advanced transmission electron microscopy (TEM) to functional materials, such as ultra-soft magnetic films for high-frequency inductors, to reveal the structure-property relationship. The ultimate goal is to delineate a more quantitative way to obtain information of the

  20. Photoemission electronic states of epitaxially grown magnetite films

    International Nuclear Information System (INIS)

    Zalecki, R.; Kolodziejczyk, A.; Korecki, J.; Spiridis, N.; Zajac, M.; Kozlowski, A.; Kakol, Z.; Antolak, D.

    2007-01-01

    The valence band photoemission spectra of epitaxially grown 300 A single crystalline magnetite films were measured by the angle-resolved ultraviolet photoemission spectroscopy (ARUPS) at 300 K. The samples were grown either on MgO(0 0 1) (B termination) or on (0 0 1) Fe (iron-rich A termination), thus intentionally presenting different surface stoichiometry, i.e. also different surface electronic states. Four main features of the electron photoemission at about -1.0, -3.0, -5.5 and -10.0 eV below a chemical potential show systematic differences for two terminations; this difference depends on the electron outgoing angle. Our studies confirm sensitivity of angle resolved PES technique on subtleties of surface states

  1. Rheological behaviour of wheat glutens at small and large deformations. Effect of gluten composition

    NARCIS (Netherlands)

    Janssen, A. M.; vanVliet, T; Vereijken, JM

    Glutens derived from two wheal cultivars with a known difference in bread making quality, i.e. cv. Katepwa (good) and cv. Obelisk (poor), were fractionated into gliadin and glutenin. Cultivar Katepwa gluten contained more glutenin than cv. Obelisk gluten. Reconstituted glutens were prepared by

  2. Dose controlled low energy electron irradiator for biomolecular films.

    Science.gov (United States)

    Kumar, S V K; Tare, Satej T; Upalekar, Yogesh V; Tsering, Thupten

    2016-03-01

    We have developed a multi target, Low Energy Electron (LEE), precise dose controlled irradiator for biomolecular films. Up to seven samples can be irradiated one after another at any preset electron energy and dose under UHV conditions without venting the chamber. In addition, one more sample goes through all the steps except irradiation, which can be used as control for comparison with the irradiated samples. All the samples are protected against stray electron irradiation by biasing them at -20 V during the entire period, except during irradiation. Ethernet based communication electronics hardware, LEE beam control electronics and computer interface were developed in house. The user Graphical User Interface to control the irradiation and dose measurement was developed using National Instruments Lab Windows CVI. The working and reliability of the dose controlled irradiator has been fully tested over the electron energy range of 0.5 to 500 eV by studying LEE induced single strand breaks to ΦX174 RF1 dsDNA.

  3. Dose controlled low energy electron irradiator for biomolecular films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, S. V. K., E-mail: svkk@tifr.res.in; Tare, Satej T.; Upalekar, Yogesh V.; Tsering, Thupten [Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400 005 (India)

    2016-03-15

    We have developed a multi target, Low Energy Electron (LEE), precise dose controlled irradiator for biomolecular films. Up to seven samples can be irradiated one after another at any preset electron energy and dose under UHV conditions without venting the chamber. In addition, one more sample goes through all the steps except irradiation, which can be used as control for comparison with the irradiated samples. All the samples are protected against stray electron irradiation by biasing them at −20 V during the entire period, except during irradiation. Ethernet based communication electronics hardware, LEE beam control electronics and computer interface were developed in house. The user Graphical User Interface to control the irradiation and dose measurement was developed using National Instruments Lab Windows CVI. The working and reliability of the dose controlled irradiator has been fully tested over the electron energy range of 0.5 to 500 eV by studying LEE induced single strand breaks to ΦX174 RF1 dsDNA.

  4. Thin Film Coatings for Suppressing Electron Multipacting in Particle Accelerators

    CERN Document Server

    Costa Pinto, P; Chiggiato, P; Neupert, H; Shaposhnikova, E N; Taborelli, M; Vollenberg, W; Yin Vallgren, C

    2011-01-01

    Thin film coatings are an effective way for suppressing electron multipacting in particle accelerators. For bakeable beam pipes, the TiZrV Non Evaporable Getter (NEG) developed at CERN can provide a Secondary Electron Yield (SEY) of 1.1 after activation at 180oC (24h). The coating process was implemented in large scale to coat the long straight sections and the experimental beam pipes for the Large Hadron Collider (LHC). For non bakeable beam pipes, as those of the Super Proton Synchrotron (SPS), CERN started a campaign to develop a coating having a low SEY without need of in situ heating. Magnetron sputtered carbon thin films have shown SEY of 1 with marginal deterioration when exposed in air for months. This material is now being tested in both laboratory and accelerator environment. At CERN’s SPS, tests with electron cloud monitors attached to carbon coated chambers show no degradation of the coating after two years of operation interleaved with a total of 3 months of air exposure during shutdown periods...

  5. Epitaxial stabilization of ultra thin films of electron doped manganites

    Energy Technology Data Exchange (ETDEWEB)

    Middey, S., E-mail: smiddey@uark.edu; Kareev, M.; Meyers, D.; Liu, X.; Cao, Y.; Tripathi, S.; Chakhalian, J. [Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Yazici, D.; Maple, M. B. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Ryan, P. J.; Freeland, J. W. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

    2014-05-19

    Ultra-thin films of the electron doped manganite La{sub 0.8}Ce{sub 0.2}MnO{sub 3} were grown in a layer-by-layer growth mode on SrTiO{sub 3} (001) substrates by pulsed laser interval deposition. High structural quality and surface morphology were confirmed by a combination of synchrotron based x-ray diffraction and atomic force microscopy. Resonant X-ray absorption spectroscopy measurements confirm the presence of Ce{sup 4+} and Mn{sup 2+} ions. In addition, the electron doping signature was corroborated by Hall effect measurements. All grown films show a ferromagnetic ground state as revealed by both dc magnetization and x-ray magnetic circular dichroism measurements and remain insulating contrary to earlier reports of a metal-insulator transition. Our results hint at the possibility of electron-hole asymmetry in the colossal magnetoresistive manganite phase diagram akin to the high-T{sub c} cuprates.

  6. Low-energy electron irradiation induced top-surface nanocrystallization of amorphous carbon film

    Science.gov (United States)

    Chen, Cheng; Fan, Xue; Diao, Dongfeng

    2016-10-01

    We report a low-energy electron irradiation method to nanocrystallize the top-surface of amorphous carbon film in electron cyclotron resonance plasma system. The nanostructure evolution of the carbon film as a function of electron irradiation density and time was examined by transmission electron microscope (TEM) and Raman spectroscopy. The results showed that the electron irradiation gave rise to the formation of sp2 nanocrystallites in the film top-surface within 4 nm thickness. The formation of sp2 nanocrystallite was ascribed to the inelastic electron scattering in the top-surface of carbon film. The frictional property of low-energy electron irradiated film was measured by a pin-on-disk tribometer. The sp2 nanocrystallized top-surface induced a lower friction coefficient than that of the original pure amorphous film. This method enables a convenient nanocrystallization of amorphous surface.

  7. Nanoporous metal film: An energy-dependent transmission device for electron waves

    International Nuclear Information System (INIS)

    Grech, S.; Degiovanni, A.; Lapena, L.; Morin, R.

    2011-01-01

    We measure electron transmission through free-standing ultrathin nanoporous gold films, using the coherent electron beam emitted by sharp field emission tips in a low energy electron projection microscope setup. Transmission coefficient versus electron wavelength plots show periodic oscillations between 75 and 850 eV. These oscillations result from the energy dependence of interference between paths through the gold and paths through the nanometer-sized pores of the film. We reveal that these films constitute high transmittance quantum devices acting on electron waves through a wavelength-dependent complex transmittance defined by the porosity and the thickness of the film.

  8. Semiclassical electronic transport in MnAs thin films

    International Nuclear Information System (INIS)

    Helman, C.; Milano, J.; Steren, L.; Llois, A.M.

    2008-01-01

    Magneto-transport experiments have been recently performed on MnAs thin films. Hall effect and transverse magnetoresistance measurements have shown interesting and, until now, unknown results. For instance, the transverse magnetoresistance shows no saturation in the presence of very high magnetic fields. In order to understand the contribution of the electronic band structure to the non-saturating magnetoresistance, we perform ab initio calculations, using the Wien2K code and analyze the magneto-transport properties within the semiclassical approximation. We show that non-saturation may be due to the presence of open orbits on the majority Fermi surface

  9. Semiclassical electronic transport in MnAs thin films

    Energy Technology Data Exchange (ETDEWEB)

    Helman, C. [Dpto de Fisica, ' Juan Jose Giambiagi' , Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, Buenos Aires (Argentina); Unidad de Actividad Fisica, Centro Atomico Constituyentes, Comision Nacional de Energia Atomica, Buenos Aires (Argentina)], E-mail: helman@tandar.cnea.gov.ar; Milano, J.; Steren, L. [Departamento de Fisica, Centro Atomico Bariloche, Comision Nacional de Energia Atomica, S.C. Bariloche (Argentina); Llois, A.M. [Dpto de Fisica, ' Juan Jose Giambiagi' , Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, Buenos Aires (Argentina); Unidad de Actividad Fisica, Centro Atomico Constituyentes, Comision Nacional de Energia Atomica, Buenos Aires (Argentina)

    2008-07-15

    Magneto-transport experiments have been recently performed on MnAs thin films. Hall effect and transverse magnetoresistance measurements have shown interesting and, until now, unknown results. For instance, the transverse magnetoresistance shows no saturation in the presence of very high magnetic fields. In order to understand the contribution of the electronic band structure to the non-saturating magnetoresistance, we perform ab initio calculations, using the Wien2K code and analyze the magneto-transport properties within the semiclassical approximation. We show that non-saturation may be due to the presence of open orbits on the majority Fermi surface.

  10. 21 CFR 184.1321 - Corn gluten.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 3 2010-04-01 2009-04-01 true Corn gluten. 184.1321 Section 184.1321 Food and... Substances Affirmed as GRAS § 184.1321 Corn gluten. (a) Corn gluten (CAS Reg. No. 66071-96-3), also known as corn gluten meal, is the principal protein component of corn endosperm. It consists mainly of zein and...

  11. Electron and hole transport in ambipolar, thin film pentacene transistors

    International Nuclear Information System (INIS)

    Saudari, Sangameshwar R.; Kagan, Cherie R.

    2015-01-01

    Solution-processed, ambipolar, thin-film pentacene field-effect transistors were employed to study both electron and hole transport simultaneously in a single, organic solid-state device. Electron and hole mobilities were extracted from the respective unipolar saturation regimes and show thermally activated behavior and gate voltage dependence. We fit the gate voltage dependent saturation mobility to a power law to extract the characteristic Meyer-Neldel (MN) energy, a measure of the width of the exponential distribution of localized states extending into the energy gap of the organic semiconductor. The MN energy is ∼78 and ∼28 meV for electrons and holes, respectively, which reflects a greater density of localized tail states for electrons than holes. This is consistent with the lower measured electron than hole mobility. For holes, the well-behaved linear regime allows for four-point probe measurement of the contact resistance independent mobility and separate characterization of the width of the localized density of states, yielding a consistent MN energy of 28 meV

  12. Electron and hole transport in ambipolar, thin film pentacene transistors

    Energy Technology Data Exchange (ETDEWEB)

    Saudari, Sangameshwar R. [Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States); Kagan, Cherie R. [Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States); Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States); Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)

    2015-01-21

    Solution-processed, ambipolar, thin-film pentacene field-effect transistors were employed to study both electron and hole transport simultaneously in a single, organic solid-state device. Electron and hole mobilities were extracted from the respective unipolar saturation regimes and show thermally activated behavior and gate voltage dependence. We fit the gate voltage dependent saturation mobility to a power law to extract the characteristic Meyer-Neldel (MN) energy, a measure of the width of the exponential distribution of localized states extending into the energy gap of the organic semiconductor. The MN energy is ∼78 and ∼28 meV for electrons and holes, respectively, which reflects a greater density of localized tail states for electrons than holes. This is consistent with the lower measured electron than hole mobility. For holes, the well-behaved linear regime allows for four-point probe measurement of the contact resistance independent mobility and separate characterization of the width of the localized density of states, yielding a consistent MN energy of 28 meV.

  13. Properties of TBCCO 2212 thin films for electronic applications

    International Nuclear Information System (INIS)

    Andreone, A.; Cassinese, A.; Palomba, F.; Pica, G.; Salluzzo, M.; Malandrino, G.; Ancarani, V.; Fragala, I.L.

    1999-01-01

    The authors report on the synthesis and structural and electrical characterization of high quality Tl 2 Ba 2 Ca 1 Cu 2 O x superconducting thin films. The samples have been prepared ex-situ by a combined approach of metal-Organic Chemical Vapor Deposition (MOCVD) and thallium vapor diffusion. The films have been grown on 10x10 mm 2 (100) LaAlO 3 substrates. X-ray diffraction (XRD), Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray analyses (EDX) have investigated the morphological and compositional nature of the films. The transport properties have been measured using both a four-probes and an inductive method. The highest critical temperature and critical current density are 104 K and 1 x 10 6 A/cm 2 respectively. The microwave response of two samples has been studied using a microstrip resonator technique. The best surface resistance values are below 200 μΩ at 1.2 GHz and 4.2 K. Measurements of the field dependence of the surface resistance have been performed

  14. Gluten-Free Labeling of Foods

    Science.gov (United States)

    ... issued a final rule defining “gluten-free” for food labeling, which will help consumers, especially those living with ... free” label on foods. Food Facts: Gluten and Food Labeling: FDA’s Regulation of “Gluten-Free” Claims Blog: A ...

  15. The response of Kodak EDR2 film in high-energy electron beams.

    Science.gov (United States)

    Gerbi, Bruce J; Dimitroyannis, Dimitri A

    2003-10-01

    Kodak XV2 film has been a key dosimeter in radiation therapy for many years. The advantages of the recently introduced Kodak EDR2 film for photon beam dosimetry have been the focus of several IMRT verification dosimetry publications. However, no description of this film's response to electron beams exists in the literature. We initiated a study to characterize the response and utility of this film for electron beam dosimetry. We exposed a series of EDR2 films to 6, 9, 12, 16, and 20 MeV electrons in addition to 6 and 18 MV x rays to develop standard characteristic curves. The linac was first calibrated to ensure that the delivered dose was known accurately. All irradiations were done at dmax in polystyrene for both photons and electrons, all films were from the same batch, and were developed at the same time. We also exposed the EDR2 films in a solid water phantom to produce central axis depth dose curves. These data were compared against percent depth dose curves measured in a water phantom using an IC-10 ion chamber, Kodak XV2 film, and a PTW electron diode. The response of this film was the same for both 6 and 18 MV x rays, but showed an apparent energy-dependent enhancement for electron beams. The response of the film also increased with increasing electron energy. This caused the percent depth dose curves using film to be shifted toward the surface compared to the ion chamber data.

  16. Gluten-free but also gluten-enriched (gluten+) diet prevent diabetes in NOD mice; the gluten enigma in type 1 diabetes.

    Science.gov (United States)

    Funda, David P; Kaas, Anne; Tlaskalová-Hogenová, Helena; Buschard, Karsten

    2008-01-01

    Environmental factors such as nutrition or exposure to infections play a substantial role in the pathogenesis of type 1 diabetes (T1D). We have previously shown that gluten-free, non-purified diet largely prevented diabetes in non-obese diabetic (NOD) mice. In this study we tested hypothesis that early introduction of gluten-enriched (gluten+) diet may increase diabetes incidence in NOD mice. Standard, gluten-free, gluten+ modified Altromin diets and hydrolysed-casein-based Pregestimil diet were fed to NOD females and diabetes incidence was followed for 310 days. Insulitis score and numbers of gut mucosal lymphocytes were determined in non-diabetic animals. A significantly lower diabetes incidence (p gluten-free diet (5.9%, n = 34) and Pregestimil diet (10%, n = 30) compared to mice on the standard Altromin diet (60.6%, n = 33). Surprisingly, gluten+ diet also prevented diabetes incidence, even at the level found with the gluten-free diet (p gluten+, gluten-free, Pregestimil) diets, did that slightly later compared to those on the standard diet. Lower insulitis score compared to control mice was found in non-diabetic NOD mice on the gluten-free, and to a lesser extent also gluten+ and Pregestimil diets. No substantial differences in the number of CD3(+), TCR-gammadelta(+), and IgA(+) cells in the small intestine were documented. Gluten+ diet prevents diabetes in NOD mice at the level found with the non-purified gluten-free diet. Possible mechanisms of the enigmatic, dual effect of dietary gluten on the development of T1D are discussed. 2007 John Wiley & Sons, Ltd

  17. Non-celiac gluten hypersensitivity

    DEFF Research Database (Denmark)

    Husby, Steffen; Murray, Joseph

    2015-01-01

    used double-blind placebo-controlled food challenges (DBPCFCs) for the diagnosis of NCGS, and none in children. Innate immune reactivity to amylase trypsin inhibitors has been suggested as the pathogenic principle in NCGS, but confirmatory evidence is lacking. Also, further clinical studies including...... transglutaminase 2, characteristic histological abnormalities of the small intestine, and an almost obligatory genetic haplotype (HLA-DQ2 or DQ8). The diagnosis of NCGS is based largely on the clinical suspicion of hyper-reactivity to gluten and the absence of the characteristics of CD. Few published studies have......Non-celiac gluten sensitivity (NCGS) has been introduced recently as a potentially common disease on the basis of studies of patients with claimed reactivity to gluten but without the characteristics of celiac disease (CD). CD is characterized by antibody reactivity toward the autoantigen...

  18. Electronic structure of semiconductor thin films (chalcopyrites) as absorbermaterials for thin film solar cells

    International Nuclear Information System (INIS)

    Lehmann, Carsten

    2007-01-01

    The objective of this work was to determine for the first time the band structure of CuInS 2 . For this purpose a new GSMBE process with TBDS as sulphur precursor was established to prevent the use of elemental sulphur in an UHV system. Additionally to the deposited films a cleave surface was prepared. The samples were characterized in situ by XPS/UPS and LEED. XRD and SEM were used for further ex situ investigations. The band structure was determined by ARUPS using synchrotron light. CuInS(001) and CuInS 2 (112) were deposited on Si and GaAs. The deposition of CuInS 2 on GaAs showed a strong dependence on the existing surface reconstruction. A 2 x 1 reconstruction of GaAs(001) yielded CuInS 2 (001) films featuring terraces. A deposition on 2 x 2 reconstructed GaAs(111)A surfaces led to a facetted CuInS 2 surface. On sulphur-passivated non-reconstructed GaAs(111)B a deposition of chalcopyrite ordered CuInS 2 free of facets was possible. On the surface of Cu-rich CuInS 2 films CuS crystallites formed. This yields ARUPS spectra showing the electronic stucture of CuInS 2 superimposed by non-dispergative states of the polycrystalline CuS segregations. The effective hole masses were derived from the k vertical stroke vertical stroke measurements. Finally the results of this work showed that the use of a (111) substrate leads to domain formation of the deposited CuInS 2 (112) films. Thus ARUPS spectra of such films show a superposition of the band structures along different directions. (orig.)

  19. HREELS to identify electronic structures of organic thin films.

    Science.gov (United States)

    Oeter, D; Ziegler, C; Göpel, W

    1995-10-01

    The electronic structure of alpha-oligothiophene (alphanT) thin films has been investigated for increasing chain lengths of n= 4-8 thiophene units with high resolution electron energy loss spectroscopy (HREELS) in the specular reflection geometry at a primary energy of 15 eV. The great advantage of this technique in contrast to UV/VIS absorption spectroscopy results from the fact, that the impact scattering mechanism of HREELS makes it possible to also detect optically forbidden electronic transitions. On the other hand, the electrons used as probes in HREELS have a wavelength which is two orders of magnitudes smaller if compared to those of photons used in UV/VIS absorption spectroscopy. Therefore individual molecules are excited by HREELS independent from each other and hence the excitation of collective excitons is not possible. As a result, information about the orientation of the molecules cannot be achieved with HREELS, which, however, is possible in polarization-dependent UV/VIS spectroscopy.

  20. Electron field emission from screen-printed graphene/DWCNT composite films

    International Nuclear Information System (INIS)

    Xu, Jinzhuo; Pan, Rong; Chen, Yiwei; Piao, Xianqin; Qian, Min; Feng, Tao; Sun, Zhuo

    2013-01-01

    Highlights: ► The field emission performance improved significantly when adding graphene into DWCNTs as the emission material. ► We set up a model of pure DWCNT films and graphene/DWCNT composite films. ► We discussed the contact barrier between emission films and electric substrates by considering the Fermi energies of silver, DWCNT and graphene. - Abstract: The electron field emission properties of graphene/double-walled carbon nanotube (DWCNT) composite films prepared by screen printing have been systematically studied. Comparing with the pure DWCNT films and pure graphene films, a significant enhancement of electron emission performance of the composite films are observed, such as lower turn-on field, higher emission current density, higher field enhancement factor, and long-term stability. The optimized composite films with 20% weight ratio of graphene show the best electron emission performance with a low turn-on field of 0.62 V μm −1 (at 1 μA cm −2 ) and a high field enhancement factor β of 13,000. A model of the graphene/DWCNT composite films is proposed, which indicate that a certain amount of graphene will contribute the electron transmission in the silver substrate/composite films interface and in the interior of composite films, and finally improve the electron emission performance of the graphene/DWCNT composite films.

  1. Gluten-free diet - facts and myths.

    OpenAIRE

    Hejduk Bobková, Barbora

    2017-01-01

    The aim of this bachelor thesis was to gain a comprehensive view of the gluten-free diet and to confirm or refute the claim that the gluten-free diet became a fashion trend in nutrition. The theoretical part explains the relationship between gluten-free diet and diseases caused by intolerance of gluten. Greater attention is paid to the most serious of these, celiac disease, whose only treatment is gluten-free diet Research of commonly available sources for the general public has produced a li...

  2. Adverse effects of gluten ingestion and advantages of gluten withdrawal in nonceliac autoimmune disease.

    Science.gov (United States)

    Lerner, Aaron; Shoenfeld, Yehuda; Matthias, Torsten

    2017-12-01

    In light of the coincident surge in overall gluten intake and the incidence of autoimmune diseases, the possible biological adverse effects of gluten were explored. PubMed, MEDLINE, and the Cochrane Library databases were screened for reports published between 1964 and 2016 regarding the adverse effects of gluten as well as the effects of a gluten-free diet on autoimmune diseases. In vitro and in vivo studies describing gluten intake in animal models or cell lines and gluten-free diets in human autoimmune diseases were reviewed. Multiple detrimental aspects of gluten affect human health, including gluten-dependent digestive and extradigestive manifestations mediated by potentially immunological or toxic reactions that induce gastrointestinal inadequacy. Gluten affects the microbiome and increases intestinal permeability. It boosts oxidative stress and affects epigenetic behavior. It is also immunogenic, cytotoxic, and proinflammatory. Gluten intake increases apoptosis and decreases cell viability and differentiation. In certain nonceliac autoimmune diseases, gluten-free diets may help curtail the adverse effects of gluten. Additional in vivo studies are needed to unravel the puzzle of gluten effects in humans and to explore the potential beneficial effects of gluten-free diets in autoimmune diseases. © The Author(s) 2017. Published by Oxford University Press on behalf of the International Life Sciences Institute. All rights reserved. For Permissions, please e-mail: journals.permissions@oup.com.

  3. Thin-film chemical sensors based on electron tunneling

    Science.gov (United States)

    Khanna, S. K.; Lambe, J.; Leduc, H. G.; Thakoor, A. P.

    1985-01-01

    The physical mechanisms underlying a novel chemical sensor based on electron tunneling in metal-insulator-metal (MIM) tunnel junctions were studied. Chemical sensors based on electron tunneling were shown to be sensitive to a variety of substances that include iodine, mercury, bismuth, ethylenedibromide, and ethylenedichloride. A sensitivity of 13 parts per billion of iodine dissolved in hexane was demonstrated. The physical mechanisms involved in the chemical sensitivity of these devices were determined to be the chemical alteration of the surface electronic structure of the top metal electrode in the MIM structure. In addition, electroreflectance spectroscopy (ERS) was studied as a complementary surface-sensitive technique. ERS was shown to be sensitive to both iodine and mercury. Electrolyte electroreflectance and solid-state MIM electroreflectance revealed qualitatively the same chemical response. A modified thin-film structure was also studied in which a chemically active layer was introduced at the top Metal-Insulator interface of the MIM devices. Cobalt phthalocyanine was used for the chemically active layer in this study. Devices modified in this way were shown to be sensitive to iodine and nitrogen dioxide. The chemical sensitivity of the modified structure was due to conductance changes in the active layer.

  4. Observation of weak superconductivity in electrons localized on a film surface

    International Nuclear Information System (INIS)

    Fogel', N.Y.; Kolin'ko, A.E.

    1984-01-01

    We have observed anomalous abrupt resistance changes in thick vanadium films [d>>xi(T)]. We have also observed a number of anomalies in the H--T phase diagrams for these films; these anomalies are most clearly seen when the field is parallel to, or at low angles of incidence with respect to, the film surface. We explain our results by assuming that there are two different electron systems present in the film. One of them is composed of electrons localized near a natural planar defect, the film surface. This subsystem is characterized by extremely small values of the critical current

  5. Fluence behavior of polyethylene films irradiated with high energy electrons

    International Nuclear Information System (INIS)

    Pino, Eddy Segura; Silva, Leonardo G. Andrade e

    1999-01-01

    Polymers are viscoelastic materials at all temperatures, so that mechanical loads induce time dependable deformations. The recovery of these deformations, on load release, take some time and it is not always recovered completely. The main objective of this work was to analyse the creep behavior of electron irradiated polyethylene films. From the experimental results, it was sated that polyethylene creeps less with an increase on irradiation dose and also that creep recovery in this material increases with doses but it is not complete. This behavior can be attributed to the crosslinking effect witch stabilize elements of the molecular structure of the polyethylene, thus reducing their mobility and so inhibiting the creep mechanism. The partial creep recovery could be also attributed to the reticulation effect and to the polyethylene plastic behavior. Additional information on the creep behavior was obtained by fitting the experimental data with exponential functions and evaluating the mathematical parameters with a modified Kelvin-Voigt mechanical model. (author)

  6. Studies of electronic and magnetic properties of LaVO3 thin film

    Science.gov (United States)

    Jana, Anupam; Karwal, Sharad; Choudhary, R. J.; Phase, D. M.

    2018-04-01

    We have investigated the electronic and magnetic properties of pulsed laser deposited Mott insulator LaVO3 (LVO) thin film. Structural characterization revels the single phase [00l] oriented LVO thin film. Enhancement of out of plane lattice parameter indicates the compressively strained LVO film. Electron spectroscopic studies demonstrate that vanadium is present in V3+ state. An energy dispersive X-ray spectroscopic study ensures the stoichiometric growth of the film. Very smooth surface is observed in scanning electron micrograph. Colour mapping for elemental distribution reflect the homogeneity of LVO film. The bifurcation between zero-field-cooled and Field-cooled curves clearly points towards the weak ferromagnetic phase presence in compressively strained LVO thin film. A finite value of coercivity at 300 K reflects the possibility of room temperature ferromagnetism of LVO thin film.

  7. Gluten sensitivity and neurological manifestations

    Directory of Open Access Journals (Sweden)

    Agostino Berio

    2015-12-01

    Full Text Available The authors report on six cases of gluten-sensitivity, also defined non-celiac gluten sensitivity, characterized by abdominal features (diarrhea, bloating, pain, genetic positivity for predisposition to celiac disease (DQB1* 02 in all cases; DQA1*05 in three; DQA1*02 in two, DQB1*03 in two, negative anti-t-Transglutaminase antibodies, normal mucosa on biopsy in four cases, type 1 of Marsh in one case. The subjects presented frequent central nervous system (CNS symptoms: headache in three patients, somnolence in one, electroencephalogram aspecific alterations in three (in two of them with previous seizures, leptomeningeal cyst in one, intracranial calcification in one, cerebral gliosis in two. After a gluten-free diet, all intestinal and clinical CNS features remitted, but re-appeared after gluten reintroduction. On the basis of the neurological signs, the authors stress the relevance of immune innate system in the pathogenesis of these cases with possible subsequent evolution on immune adaptive system involvement.

  8. GAGG:ce single crystalline films: New perspective scintillators for electron detection in SEM

    International Nuclear Information System (INIS)

    Bok, Jan; Lalinský, Ondřej; Hanuš, Martin; Onderišinová, Zuzana; Kelar, Jakub; Kučera, Miroslav

    2016-01-01

    Single crystal scintillators are frequently used for electron detection in scanning electron microscopy (SEM). We report gadolinium aluminum gallium garnet (GAGG:Ce) single crystalline films as a new perspective scintillators for the SEM. For the first time, the epitaxial garnet films were used in a practical application: the GAGG:Ce scintillator was incorporated into a SEM scintillation electron detector and it showed improved image quality. In order to prove the GAGG:Ce quality accurately, the scintillation properties were examined using electron beam excitation and compared with frequently used scintillators in the SEM. The results demonstrate excellent emission efficiency of the GAGG:Ce single crystalline films together with their very fast scintillation decay useful for demanding SEM applications. - Highlights: • First practical application of epitaxial garnet films demonstrated in SEM. • Improved image quality of SEM equipped with GAGG:Ce single crystalline thin film scintillator. • Scintillation properties of GAGG:Ce films compared with standard bulk crystal scintillators.

  9. Structural and electronic properties of polar MnO ultrathin film grown on Ag(111)

    Energy Technology Data Exchange (ETDEWEB)

    Kundu, Asish K., E-mail: asish.kundu@saha.ac.in; Menon, Krishnakumar S. R. [Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 70064 (India)

    2016-05-23

    Surface electronic structure of ultrathin polar MnO film was studied by Low-energy Electron Diffraction (LEED) and Photoemission Spectroscopic (PES) techniques. Epitaxial monolayer to facet formation with increasing film thickness has been observed by LEED. Our LEED result shows p(2x2) surface reconstruction along with facet formation, stabilize the polar MnO(111) surface. The core levels and the valence band electronic structure of MnO films have been studied as a function of film thickness using X-ray and ultraviolet photoelectron spectroscopy techniques.

  10. Use of thin films obtained by electron beam evaporation as optical wave guide

    International Nuclear Information System (INIS)

    Nobre, S.A.A.; Oliveira, C.A.S. de; Freire, G.F.de O.

    1986-01-01

    Thin films evaporated by electron beam for the fabrication of planar optical waveguides were used. The tested materials were aluminium oxide (Al 2 O 3 ) and tantalum pentoxide (Ta 2 O 5 ). The effect of annealing conditions on the film absorption was investigated for Ta 2 O 5 . The Al 2 O 3 films were characterized by the method of guided modes, in terms of refractive index measurements and film thickness. Atenuation measurements were also carried out. (M.C.K.) [pt

  11. Non-Celiac Gluten Sensitivity among Patients Perceiving Gluten-Related Symptoms.

    Science.gov (United States)

    Capannolo, Annalisa; Viscido, Angelo; Barkad, Mohamed Ali; Valerii, Giorgio; Ciccone, Fabiana; Melideo, Dina; Frieri, Giuseppe; Latella, Giovanni

    2015-01-01

    Non-celiac gluten sensitivity (NCGS) is a recently recognized disorder, characterized by the occurrence of symptoms following gluten ingestion. It is often self-diagnosed by the patient, but should be confirmed by the response to a gluten-free diet, followed by a gluten challenge. Celiac disease (CD) and wheat allergy (WA) must first be ruled out. (1) to determine the frequency of visits performed for symptoms self-perceived as gluten-related; (2) to assess in this cohort, the proportion of patients satisfying the diagnostic criteria for NCGS. A two-year prospective study including all consecutive patients complaining of gluten-related symptoms. NCGS was diagnosed on the basis of the disappearance of the symptoms within 6 months of a gluten-free diet, followed by their reappearance with the reintroduction of gluten in the diet for 1 month. Three hundred and ninety two patients complaining of gluten-related symptoms were enrolled; 26 of these (6.63%) were affected by CD, 2 (0.51%) by WA and 27 were diagnosed with NCGS (6.88%). The remaining 337 patients (85.96%) did not experience any change of symptoms with a gluten-free diet. The PPV of the gluten-related symptom was found to be 7%. Eighty six percent of patients reporting gluten-related symptoms have neither NCGS, nor CD, nor WA. Self-perceived gluten-related symptoms are rarely indicative of the presence of NCGS. © 2015 S. Karger AG, Basel.

  12. The Clinical Response to Gluten Challenge: A Review of the Literature

    Science.gov (United States)

    Bruins, Maaike J.

    2013-01-01

    The aim of this review was to identify, evaluate and summarize all relevant studies reporting on the clinical response to gluten challenge by adult or pediatric patients with suspected or diagnosed coeliac disease (CD) on a gluten-free diet. We evaluated the effect of gluten challenge on changes in symptoms, intestinal mucosa histology, and serum antibodies. A systematic electronic search was performed for studies published as of 1966 using PubMed and Scopus databases. In the reviewed studies, doses ranged from 0.2 to 30 g/day of wheat gluten or comprised a gluten-containing diet. The onset of symptoms upon gluten intake varied largely from days to months and did not parallel serum antibody or histological changes. Within 3 months of gluten challenge, 70%–100% of pediatric CD patients became positive for AGA-IgA and EMA-IgA antibodies and 50%–70% for AGA-IgG. A limited number of trials suggest that no more than half of adult patients developed positive AGA-IgA, EMA-IgA, tTG-IgA or DGP-IgA/IgG titers. Approximately 50%–100% of pediatric and adult patients experienced mucosal relapse of gluten provocation within 3 months, which was preceded by increased mucosal intra-epithelial lymphocytes within several days of challenge. A 3-month high-dose gluten challenge should be suitable to diagnose the majority of CD patients. In some cases prolonged challenge may be needed to verify diagnosis. Combination testing for antibodies and mucosal histology may fasten the diagnosis. PMID:24284613

  13. The Clinical Response to Gluten Challenge: A Review of the Literature

    Directory of Open Access Journals (Sweden)

    Maaike J. Bruins

    2013-11-01

    Full Text Available The aim of this review was to identify, evaluate and summarize all relevant studies reporting on the clinical response to gluten challenge by adult or pediatric patients with suspected or diagnosed coeliac disease (CD on a gluten-free diet. We evaluated the effect of gluten challenge on changes in symptoms, intestinal mucosa histology, and serum antibodies. A systematic electronic search was performed for studies published as of 1966 using PubMed and Scopus databases. In the reviewed studies, doses ranged from 0.2 to 30 g/day of wheat gluten or comprised a gluten-containing diet. The onset of symptoms upon gluten intake varied largely from days to months and did not parallel serum antibody or histological changes. Within 3 months of gluten challenge, 70%–100% of pediatric CD patients became positive for AGA-IgA and EMA-IgA antibodies and 50%–70% for AGA-IgG. A limited number of trials suggest that no more than half of adult patients developed positive AGA-IgA, EMA-IgA, tTG-IgA or DGP-IgA/IgG titers. Approximately 50%–100% of pediatric and adult patients experienced mucosal relapse of gluten provocation within 3 months, which was preceded by increased mucosal intra-epithelial lymphocytes within several days of challenge. A 3-month high-dose gluten challenge should be suitable to diagnose the majority of CD patients. In some cases prolonged challenge may be needed to verify diagnosis. Combination testing for antibodies and mucosal histology may fasten the diagnosis.

  14. Charging of carbon thin films in scanning and phase-plate transmission electron microscopy

    DEFF Research Database (Denmark)

    Hettler, Simon; Kano, Emi; Dries, Manuel

    2018-01-01

    A systematic study on charging of carbon thin films under intense electron-beam irradiation was performed in a transmission electron microscope to identify the underlying physics for the functionality of hole-free phase plates. Thin amorphous carbon films fabricated by different deposition techni...

  15. Dielectric properties of electron irradiated PbZrO 3 thin films

    Indian Academy of Sciences (India)

    The present paper deals with the study of the effects of electron (8 MeV) irradiation on the dielectric and ferroelectric properties of PbZrO3 thin films grown by sol–gel technique. The films were (0.62 m thick) subjected to electron irradiation using Microtron accelerator (delivered dose 80, 100, 120 kGy). The films were well ...

  16. Origin of spin-dependent asymmetries in electron transmission through ultrathin ferromagnetic films

    International Nuclear Information System (INIS)

    Gokhale, M.P.; Mills, D.L.

    1991-01-01

    We present theoretical calculations of exchange asymmetries in the transmission of electrons through ultrathin films of ferromagnetic Fe. The results account nicely for the magnitude of the asymmetries observed by Pappas et al. in photoemission studies of Cu covered by an ultrathin film of Fe. We argue that exchange asymmetry in the transmissivity of the Fe film, rather than the spin dependence of the electron mean free path, is responsible for the effects reported by these authors

  17. Quasi-one-dimensional electron transport over the surface of a liquid-helium film

    International Nuclear Information System (INIS)

    Sokolov, Sviatoslav; Studart, Nelson

    2003-01-01

    Quasi-one-dimensional mobility of surface electrons over a liquid-helium suspended film is studied for a conducting channel. The electron mobility is calculated taking into account the electron scattering by helium atoms in the vapor phase, ripplons, and surface defects of the film substrate both in one-electron regime and in the so-called complete-control limit where the influence of inter-electron collisions on the electron distribution function is taken into account. It is shown that the mobility for low temperatures is dominated by the surface-defect scattering and its temperature dependence is essentially different from that of the electron-ripplon scattering

  18. Fundamental Study on the Impact of Gluten-Free Starches on the Quality of Gluten-Free Model Breads

    Directory of Open Access Journals (Sweden)

    Stefan W. Horstmann

    2016-04-01

    Full Text Available Starch is widely used as an ingredient and significantly contributes to texture, appearance, and overall acceptability of cereal based foods, playing an important role due to its ability to form a matrix, entrapping air bubbles. A detailed characterisation of five gluten-free starches (corn, wheat, rice, tapioca, potato was performed in this study. In addition, the influence of these starches, with different compositional and morphological properties, was evaluated on a simple gluten-free model bread system. The morphological characterisation, evaluated using scanning electron microscopy, revealed some similarities among the starches, which could be linked to the baking performance of the breads. Moreover, the lipid content, though representing one of the minor components in starch, was found to have an influence on pasting, bread making, and staling. Quality differences in cereal root and tuber starch based breads were observed. However, under the baking conditions used, gluten-free rendered wheat starch performed best, followed by potato starch, in terms of loaf volume and cell structure. Tapioca starch and rice starch based breads were not further analysed, due to an inferior baking performance. This is the first study to evaluate gluten-free starch on a simple model bread system.

  19. Metal oxide semiconductor thin-film transistors for flexible electronics

    Energy Technology Data Exchange (ETDEWEB)

    Petti, Luisa; Vogt, Christian; Büthe, Lars; Cantarella, Giuseppe; Tröster, Gerhard [Electronics Laboratory, Swiss Federal Institute of Technology, Zürich (Switzerland); Münzenrieder, Niko [Electronics Laboratory, Swiss Federal Institute of Technology, Zürich (Switzerland); Sensor Technology Research Centre, University of Sussex, Falmer (United Kingdom); Faber, Hendrik; Bottacchi, Francesca; Anthopoulos, Thomas D. [Department of Physics and Centre for Plastic Electronics, Imperial College London, London (United Kingdom)

    2016-06-15

    The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In

  20. Application of printed nanocrystalline diamond film for electron emission cathode

    International Nuclear Information System (INIS)

    Zhang Xiuxia; Wei Shuyi; Lei Chongmin; Wei Jie; Lu Bingheng; Ding Yucheng; Zhu Changchun

    2011-01-01

    The low-cost and large area screen-printed nano-diamond film (NDF) for electronic emission was fabricated. The edges and corners of nanocrystalline diamond are natural field-emitters. The nano-diamond paste for screen-printing was fabricated of mixing nano-graphite and other inorganic or organic vehicles. Through enough disperse in isopropyl alcohol by ultrasonic nano-diamond paste was screen-printed on the substrates to form NDF. SEM images showed that the surface morphology of NDF was improved, and the nano-diamond emitters were exposed from NDF through the special thermal-sintering technique and post-treatment process. The field emission characteristics of NDF were measured under all conditions with 10 -6 Pa pressure. The results indicated that the field emission stability and emission uniformity of NDF were improved through hydrogen plasma post-treatment process. The turn-on field decreased from 1.60 V/μm to 1.25 V/μm. The screen-printed NDF can be applied to the displays electronic emission cathode for low-cost outdoor in large area.

  1. Electron-beam-induced conduction in polyethylene terephthalate films

    Energy Technology Data Exchange (ETDEWEB)

    Beckley, L M; Lewis, T J; Taylor, D M [University Coll. of North Wales, Bangor (UK). School of Electronic Engineering Science

    1976-06-21

    Measurements are reported of electron-beam-induced conduction in thin polyethylene terephthalate (PET) films for electron energies up to 10 keV. The ratio of induced dielectric current to incident beam current (the gain) is orders of magnitude less than unity over practically the whole range of beam penetration. This result is quite unlike that normally found for inorganic dielectrics where the gain will exceed unity and reach a maximum at or near full penetration. In spite of the very different gain characteristics it is shown that the model recently proposed by Nunes de Oliviera and Gross (J. App. Phys.; 46:3132 (1975)), and by Aris et al (IEE Conf. Publ. No.129.; 267 (1975) and J. Phys. C. Solid State Phys.; 9:797 (1976)) and applied to mica and tantalum oxide respectively is also applicable to PET. Use is made of the known carrier mobility and lifetime data for this polymer and it is shown that very large space-charge distortions of the field can be produced by the beam which may well account for the frequent sample failure experienced during the experiments. The work supports suggestions by earlier workers that the current in unirradiated PET is electrode limited and predicts the maximum (space-charge limited) current likely to occur in this polymer.

  2. Charging-assisted desorption of deuterium films by keV electrons

    DEFF Research Database (Denmark)

    Schou, Jørgen; Thestrup Nielsen, Birgitte; Pedersen, Thomas Garm

    2009-01-01

    m. The initial film thickness and the mass loss as result of desorption were monitored by the QCM. The electron beam current was kept at about or below 100 nA to avoid beam-induced evaporation. Secondary electron emission was suppressed to a value below 0.01-0.03 electrons/electron by a repeller...

  3. Gluten-Free Diet Indications, Safety, Quality, Labels, and Challenges

    OpenAIRE

    Rostami, Kamran; Bold, Justine; Parr, Alison; Johnson, Matt W.

    2017-01-01

    A gluten-free diet (GFD) is the safest treatment modality in patient with coeliac disease (CD) and other gluten-related disorders. Contamination and diet compliance are important factors behind persistent symptoms in patients with gluten related-disorders, in particular CD. How much gluten can be tolerated, how safe are the current gluten-free (GF) products, what are the benefits and side effects of GFD? Recent studies published in Nutrients on gluten-free products? quality, availability, saf...

  4. Biodegradability of wheat gluten based bioplastics.

    Science.gov (United States)

    Domenek, Sandra; Feuilloley, Pierre; Gratraud, Jean; Morel, Marie-Hélène; Guilbert, Stéphane

    2004-01-01

    A large variety of wheat gluten based bioplastics, which were plasticized with glycerol, were subjected to biodegradation. The materials covered the total range available for the biochemical control parameter Fi, which expresses the percentage of aggregated proteins. This quantity can be related to the density of covalent crosslinks in the wheat gluten network, which are induced by technological treatments. The biodegradability tests were performed in liquid medium (modified Sturm test) and in farmland soil. All gluten materials were fully degraded after 36 days in aerobic fermentation and within 50 days in farmland soil. No significant differences were observed between the samples. The mineralization half-life time of 3.8 days in the modified Sturm test situated gluten materials among fast degrading polymers. The tests of microbial inhibition experiments revealed no toxic effects of the modified gluten or of its metabolites. Thus, the protein bulk of wheat gluten materials is non-toxic and fully biodegradable, whatever the technological process applied.

  5. Interaction of water unextractable solids with gluten protein: Effect on dough properties and gluten quality

    NARCIS (Netherlands)

    Wang, M.; Oudgenoeg, G.; Vliet, T. van; Hamer, R.J.

    2003-01-01

    In a previous study, we have shown that water unextractable solids (WUS) interfere with gluten formation and affect the quality of the resulting gluten. In this study we aim to explain how WUS can affect the process of gluten formation. To this end, WUS were modified with NaOH, xylanase, horseradish

  6. Properties of Gluten Intolerance: Gluten Structure, Evolution, Pathogenicity and Detoxification Capabilities

    Science.gov (United States)

    Balakireva, Anastasia V.; Zamyatnin, Andrey A.

    2016-01-01

    Theterm gluten intolerance may refer to three types of human disorders: autoimmune celiac disease (CD), allergy to wheat and non-celiac gluten sensitivity (NCGS). Gluten is a mixture of prolamin proteins present mostly in wheat, but also in barley, rye and oat. Gluten can be subdivided into three major groups: S-rich, S-poor and high molecular weight proteins. Prolamins within the groups possess similar structures and properties. All gluten proteins are evolutionarily connected and share the same ancestral origin. Gluten proteins are highly resistant to hydrolysis mediated by proteases of the human gastrointestinal tract. It results in emergence of pathogenic peptides, which cause CD and allergy in genetically predisposed people. There is a hierarchy of peptide toxicity and peptide recognition by T cells. Nowadays, there are several ways to detoxify gluten peptides: the most common is gluten-free diet (GFD), which has proved its effectiveness; prevention programs, enzymatic therapy, correction of gluten pathogenicity pathways and genetically modified grains with reduced immunotoxicity. A deep understanding of gluten intolerance underlying mechanisms and detailed knowledge of gluten properties may lead to the emergence of novel effective approaches for treatment of gluten-related disorders. PMID:27763541

  7. Properties of Gluten Intolerance: Gluten Structure, Evolution, Pathogenicity and Detoxification Capabilities

    Directory of Open Access Journals (Sweden)

    Anastasia V. Balakireva

    2016-10-01

    Full Text Available Theterm gluten intolerance may refer to three types of human disorders: autoimmune celiac disease (CD, allergy to wheat and non-celiac gluten sensitivity (NCGS. Gluten is a mixture of prolamin proteins present mostly in wheat, but also in barley, rye and oat. Gluten can be subdivided into three major groups: S-rich, S-poor and high molecular weight proteins. Prolamins within the groups possess similar structures and properties. All gluten proteins are evolutionarily connected and share the same ancestral origin. Gluten proteins are highly resistant to hydrolysis mediated by proteases of the human gastrointestinal tract. It results in emergence of pathogenic peptides, which cause CD and allergy in genetically predisposed people. There is a hierarchy of peptide toxicity and peptide recognition by T cells. Nowadays, there are several ways to detoxify gluten peptides: the most common is gluten-free diet (GFD, which has proved its effectiveness; prevention programs, enzymatic therapy, correction of gluten pathogenicity pathways and genetically modified grains with reduced immunotoxicity. A deep understanding of gluten intolerance underlying mechanisms and detailed knowledge of gluten properties may lead to the emergence of novel effective approaches for treatment of gluten-related disorders.

  8. Interaction of water unextractable solids with gluten protein: effect on dough properties and gluten quality

    NARCIS (Netherlands)

    Wang, M.; Oudgenoeg, G.; Vliet, van T.; Hamer, R.J.

    2003-01-01

    Abstract In a previous study, we have shown that water unextractable solids (WUS) interfere with gluten formation and affect the quality of the resulting gluten. In this study we aim to explain how WUS can affect the process of gluten formation. To this end, WUS were modified with NaOH, xylanase,

  9. Interaction of water extractable pentosans with gluten protein : effect on dough properties and gluten quality

    NARCIS (Netherlands)

    Wang, M.; Hamer, R.J.; Vliet, van T.; Oudgenoeg, G.

    2002-01-01

    The effects of modified water extractable pentosans (WEP) on gluten yield, dough properties, gluten quality and composition were studied. The results show that WEP interfere with gluten formation in both a direct and an indirect way. WEP interfere indirectly by competing for water and thus changing

  10. Translational Chemistry Meets Gluten-Related Disorders.

    Science.gov (United States)

    Lammers, Karen M; Herrera, Maria G; Dodero, Veronica I

    2018-03-01

    Gluten-related disorders are a complex group of diseases that involve the activation of the immune system triggered by the ingestion of gluten. Among these, celiac disease, with a prevalence of 1 %, is the most investigated, but recently, a new pathology, named nonceliac gluten sensitivity, was reported with a general prevalence of 7 %. Finally, there other less-prevalent gluten-related diseases such as wheat allergy, gluten ataxia, and dermatitis herpetiformis (with an overall prevalence of less than 0.1 %). As mentioned, the common molecular trigger is gluten, a complex mixture of storage proteins present in wheat, barley, and a variety of oats that are not fully degraded by humans. The most-studied protein related to disease is gliadin, present in wheat, which possesses in its sequence many pathological fragments. Despite a lot of effort to treat these disorders, the only effective method is a long-life gluten-free diet. This Review summarizes the actual knowledge of gluten-related disorders from a translational chemistry point of view. We discuss what is currently known from the literature about the interaction of gluten with the gut and the critical host responses it evokes and, finally, connect them to our current and novel molecular understanding of the supramolecular organization of gliadin and the 33-mer gliadin peptide fragment under physiological conditions.

  11. Laser annealed HWCVD and PECVD thin silicon films. Electron field emission

    International Nuclear Information System (INIS)

    O'Neill, K.A.; Shaikh, M.Z.; Lyttle, G.; Anthony, S.; Fan, Y.C.; Persheyev, S.K.; Rose, M.J.

    2006-01-01

    Electron Field Emission (FE) properties of various laser annealed thin silicon films on different substrates were investigated. HWCVD microcrystalline and PECVD amorphous silicon films were irradiated with Nd : YAG and XeCl Excimer lasers at varying energy densities. Encouraging FE results were mainly from XeCl Excimer laser processed PECVD and HWCVD films on metal backplanes. FE measurements were complemented by the study of film surface morphology. Geometric field enhancement factors from surface measurements and Fowler-Nordheim Theory (FNT) were compared. FE properties of the films were also found to be particularly influenced by the backplane material

  12. Gafchromic EBT3 film dosimetry in electron beams — energy dependence and improved film read‐out

    Science.gov (United States)

    Ojala, Jarkko; Kaijaluoto, Sampsa; Jokelainen, Ilkka; Kosunen, Antti

    2016-01-01

    For megavoltage photon radiation, the fundamental dosimetry characteristics of Gafchromic EBT3 film were determined in  60Co gamma ray beam with addition of experimental and Monte Carlo (MC)‐simulated energy dependence of the film for 6 MV photon beam and 6 MeV, 9 MeV, 12 MeV, and 16 MeV electron beams in water phantom. For the film read‐out, two phase correction of scanner sensitivity was applied: a matrix correction for scanning area and dose‐dependent correction by iterative procedure. With these corrections, the uniformity of response can be improved to be within ±50 pixel values (PVs). To improve the read‐out accuracy, a procedure with flipped film orientations was established. With the method, scanner uniformity can be improved further and dust particles, scratches and/or dirt on scanner glass can be detected and eliminated. Responses from red and green channels were averaged for read‐out, which decreased the effect of noise present in values from separate channels. Since the signal level with the blue channel is considerably lower than with other channels, the signal variation due to different perturbation effects increases the noise level so that the blue channel is not recommended to be used for dose determination. However, the blue channel can be used for the detection of emulsion thickness variations for film quality evaluations with unexposed films. With electron beams ranging from 6 MeV to 16 MeV and at reference measurement conditions in water, the energy dependence of the EBT3 film is uniform within 0.5%, with uncertainties close to 1.6% (k=2). Including 6 MV photon beam and the electron beams mentioned, the energy dependence is within 1.1%. No notable differences were found between the experimental and MC‐simulated responses, indicating negligible change in intrinsic energy dependence of the EBT3 film for 6 MV photon beam and 6 MeV–16 MeV electron beams. Based on the dosimetric characteristics of the EBT3 film, the read

  13. Terahertz detectors using hot-electrons in superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Semenov, A. [DLR, Inst. of Planetary Research, Berlin (Germany)

    2007-07-01

    Recently the terahertz gap has been recognized as a prospective spectral range for radioastronomy as well as for material and security studies. Implementation of terahertz technology in these fields requires further improvement of instruments and their major subcomponents. Physical phenomena associated with the local and homogeneous non-equilibrium electron sates in thin superconducting films offer numerous possibilities for the development of terahertz and infrared detectors. Depending on the nature of the resistive state and the operation regime, a variety of detector can be realized. They are e.g. direct bolometric or kinetic inductance detectors, heterodyne mixers or photon counters. Operation principles and physical limitations of these devices will be discussed. Two examples of the detector development made in cooperation between the German Aerospace Center, the University of Karlsruhe and PTB, Berlin will be presented. The energy resolving single-photon detector with an almost fundamentally limited energy resolution of 0.6 eV at 6.5 K for photons with wavelengths from 400 nm to 2500 nm and the heterodyne mixer quasioptically coupled to radiation in the frequency range from 0.8 THz to 5 THz and providing a noise temperature of less then ten times the quantum limit. The mixers will be implemented in the terahertz radar for security screening (TERASEC) and in the heterodyne receiver of the stratospheric observatory SOFIA. (orig.)

  14. Electronic properties of thermally formed thin iron oxide films

    International Nuclear Information System (INIS)

    Wielant, J.; Goossens, V.; Hausbrand, R.; Terryn, H.

    2007-01-01

    The oxide layer, present between an organic coating and the substrate, guarantees adhesion of the coating and plays a determinating role in the delamination rate of the organic coating. The purpose of this study is to compare the resistive and semiconducting properties of thermal oxides formed on steel in two different atmospheres at 250 deg. C: an oxygen rich atmosphere, air, and an oxygen deficient atmosphere, N 2 . In N 2 , a magnetite layer grows while in air a duplex oxide film forms composed by an inner magnetite layer and a thin outer hematite scale. The heat treatment for different amounts of time at high temperature was used as method to sample the thickness variation and change in electronic and semiconducting properties of the thermal oxide layers. Firstly, linear voltammetric measurements were performed to have a first insight in the electrochemical behavior of the thermal oxides in a borate buffer solution. Electrochemical impedance spectroscopy in the same buffer combined with the Mott-Schottky analysis were used to determine the semiconducting properties of the thermal oxides. By spectroscopic ellipsometry (SE) and atomic force microscopy (AFM), respectively, the thickness and roughness of the oxide layers were determined supporting the physical interpretation of the voltammetric and EIS data. These measurements clearly showed that oxide layers with different constitution, oxide resistance, flatband potential and doping concentration can be grown by changing the atmosphere

  15. Some possibilities of the slow electron diffraction method when studying film systems

    International Nuclear Information System (INIS)

    Kirsanova, T.S.; Tumareva, T.A.; Kiseleva, L.A.

    1982-01-01

    A film structure of an initial thickness was studied with film probing in depth by an electron beam; for this purpose energy of incident electrons changed in sufficient wide ranges. Barium oxide films of 6-10 monolayer thickness deposited on a monocrystal (110) W have been chosen for the investigation. The structure was detected in a certain temperature range (850-1250 K) and the maximum development, the largest energy range fit approximatly 1000-1100 K temperature. Optimal temperature increases slightly with increasing an initial film thickness. The investigations carried on have shown that the structure of barium oxide films is heterogeneous in the layer thickness. This is concerned espicially the films of 6-10 monolayers. Notwithstanding the thickness trifle, the ''surface'' which structure was different from a region immediately adjacent to a substrate may be separated in films of this area. The method of the investigation in layers, i. e. the method for observing the film structure when varying incident electron energy permitted to establish that an absolute by certain structure of the layer adjacent to a substrate corresponds to each structure of the surface layer. In turn the structures of the layer adjacent to a substrate for the total film thickness of 6-10 monolayers turn out to be similar to the structures of 2-5 monolayer film, anyhow these structures are described with similar diffraction pictures

  16. Radiolytic preparation of thin Au film directly on resin substrate using high-energy electron beam

    Energy Technology Data Exchange (ETDEWEB)

    Ohkubo, Yuji, E-mail: okubo@upst.eng.osaka-u.ac.jp [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Seino, Satoshi; Nakagawa, Takashi; Kugai, Junichiro [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Ueno, Koji [Japan Electron Beam Irradiation Service Ltd., 5-3 Ozushima, Izumiohtsu, Osaka 595-0074 (Japan); Yamamoto, Takao A. [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)

    2016-04-01

    A novel method for preparing thin Au films directly on resin substrates using an electron beam was developed. The thin Au films were prepared on a resin substrate by the reduction of Au ions in an aqueous solution via irradiation with a high-energy electron beam (4.8 MeV). This reduction method required 7 s of the irradiation time of the electron beam. Furthermore, no reductant or catalyst was needed. As the concentration of Au ions in the precursor solution was increased, the amount of Au deposited on the resin substrate increased, too, and the structure of the prepared Au film changed. As a result, the film color changed as well. Cross-sectional scanning electron microscope images of the thus-prepared Au film indicated that the Au films were consisted of two layers: a particle layer and a bottom bulk layer. There was strong adhesion between the Au films and the underlying resin substrates. This was confirmed by the tape-peeling test and through ultrasonic cleaning. After both processes, Au remained on the resin substrates, while most of the particle-like moieties were removed. This indicated that the thin Au films prepared via irradiation with a high-energy electron beam adhered strongly to the resin substrates. - Highlights: • A thin gold (Au) film was formed by EBIRM for the first time. • The irradiation time of the electron beam was less than 10 s. • Thin Au films were obtained without reductant or catalyst. • Au films were consisted of two layers: a particle layer and a bottom bulk layer. • There was strong adhesion between the bottom bulk layer and the underlying resin substrates.

  17. Spin dependent transport of hot electrons through ultrathin epitaxial metallic films

    Energy Technology Data Exchange (ETDEWEB)

    Heindl, Emanuel

    2010-06-23

    In this work relaxation and transport of hot electrons in thin single crystalline metallic films is investigated by Ballistic Electron Emission Microscopy. The electron mean free paths are determined in an energy interval of 1 to 2 eV above the Fermi level. While fcc Au-films appear to be quite transmissive for hot electrons, the scattering lengths are much shorter for the ferromagnetic alloy FeCo revealing, furthermore, a strong spin asymmetry in hot electron transport. Additional information is gained from temperature dependent studies in combination with golden rule approaches in order to disentangle the impact of several relaxation and transport properties. It is found that bcc Fe-films are much less effective in spin filtering than films made of the FeCo-alloy. (orig.)

  18. Influence of electron irradiation on the structural and thermal properties of silk fibroin films

    Energy Technology Data Exchange (ETDEWEB)

    Asha, S.; Sangappa,; Sanjeev, Ganesh, E-mail: ganeshanjeev@rediffmail.com [Department of Studies in Physics, Mangalore University, Mangalagangotri, Mangalore - 574 199 (India)

    2015-06-24

    Radiation-induced changes in Bombyx mori silk fibroin (SF) films under electron irradiation were investigated and correlated with dose. SF films were irradiated in air at room temperature using 8 MeV electron beam in the range 0-150 kGy. Various properties of the irradiated SF films were studied using X-ray diffraction (XRD), Differential Scanning Calorimetry (DSC) and Thermogravimetric Analysis (TGA). Electron irradiation was found to induce changes in the physical and thermal properties, depending on the radiation dose.

  19. Helium ion beam induced electron emission from insulating silicon nitride films under charging conditions

    Science.gov (United States)

    Petrov, Yu. V.; Anikeva, A. E.; Vyvenko, O. F.

    2018-06-01

    Secondary electron emission from thin silicon nitride films of different thicknesses on silicon excited by helium ions with energies from 15 to 35 keV was investigated in the helium ion microscope. Secondary electron yield measured with Everhart-Thornley detector decreased with the irradiation time because of the charging of insulating films tending to zero or reaching a non-zero value for relatively thick or thin films, respectively. The finiteness of secondary electron yield value, which was found to be proportional to electronic energy losses of the helium ion in silicon substrate, can be explained by the electron emission excited from the substrate by the helium ions. The method of measurement of secondary electron energy distribution from insulators was suggested, and secondary electron energy distribution from silicon nitride was obtained.

  20. Sputtering of thin and intermediately thick films of solid deuterium by keV electrons

    DEFF Research Database (Denmark)

    Svendsen, Winnie Edith; Thestrup Nielsen, Birgitte; Schou, Jørgen

    1995-01-01

    Sputtering of films of solid deuterium by keV electrons was studied in a cryogenic set-up. The sputtering yield shows a minimum yield of about 4 D2/electron for 1.5 and 2 keV electrons at a thickness slightly larger than the average projected range of the electrons. We suggest that the yield around...... the minimum represents the value closest to a bulk-yield induced by electron bombardment. It may also include contributions from the mechanisms that enhance the yield for thin and very thick films....

  1. Nb{sub 3}Al thin film deposition for low-noise terahertz electronics

    Energy Technology Data Exchange (ETDEWEB)

    Dochev, D; Pavolotsky, A B; Belitsky, V; Olofsson, H [Group for Advanced Receiver Development and Onsala Space Observatory, Department of Radio- and Space Science, Chalmers University of Technology, SE 412 96 Gothenburg (Sweden)], E-mail: dimitar.dochev@chalmers.se

    2008-02-01

    Higher energy gap superconducting materials were always interesting for low-noise mixer applications such as superconductor-insulator-superconductor tunnel junctions (SIS) and hot-electron bolometer (HEB) used in sub-millimeter and terahertz parts of electro-magnetic spectrum. Here, we report a novel approach for producing Nb{sub 3}Al thin film by co-sputtering from two confocally arranged Nb and Al dc-magnetrons onto substrate heated up to 830 deg. C. Characterization of the deposited films revealed presence of the A15 phase and measured critical temperature was up to 15.7 K with the transition width 0.2-0.3 K for a 300 nm thick film. We measured the film critical magnetic field and studied influence of annealing on the film properties. We have investigated compositional depth profile of the deposited films by spectroscopy of reflected electrons.

  2. Nb3Al thin film deposition for low-noise terahertz electronics

    International Nuclear Information System (INIS)

    Dochev, D; Pavolotsky, A B; Belitsky, V; Olofsson, H

    2008-01-01

    Higher energy gap superconducting materials were always interesting for low-noise mixer applications such as superconductor-insulator-superconductor tunnel junctions (SIS) and hot-electron bolometer (HEB) used in sub-millimeter and terahertz parts of electro-magnetic spectrum. Here, we report a novel approach for producing Nb 3 Al thin film by co-sputtering from two confocally arranged Nb and Al dc-magnetrons onto substrate heated up to 830 deg. C. Characterization of the deposited films revealed presence of the A15 phase and measured critical temperature was up to 15.7 K with the transition width 0.2-0.3 K for a 300 nm thick film. We measured the film critical magnetic field and studied influence of annealing on the film properties. We have investigated compositional depth profile of the deposited films by spectroscopy of reflected electrons

  3. Field electron emission characteristics of chemical vapour deposition diamond films with controlled sp2 phase concentration

    International Nuclear Information System (INIS)

    Lu, X.; Yang, Q.; Xiao, C.; Hirose, A.

    2008-01-01

    Diamond films were synthesized in a microwave plasma-enhanced chemical vapour deposition reactor. The microstructure and surface morphology of deposited films were characterized by Raman spectroscope and scanning electron microscope. The sp 2 phase concentration in diamond films was varied and its effect on the field electron emission (FEE) properties was investigated. Diamond films deposited under higher methane concentration exhibit better FEE property including lower turn-on electric field and larger emission current. The predominating factor modifying the FEE property is presumed to be the increase of sp 2 phase concentration. The influence of bias voltage on the FEE property of diamond films is not monotonic. Postgrowth acid treatment reduces the sp 2 phase content in diamond films without changing diamond grain sizes. The corresponding FEE property was degraded

  4. Characterization of composite biofilms of wheat gluten and cellulose acetate phthalate

    Directory of Open Access Journals (Sweden)

    F. M. Fakhouri

    2004-06-01

    Full Text Available The objective of this research was to develop and characterize composite biofilms produced using wheat gluten and cellulose acetate phthalate. Biofilms act as barriers to moisture and oxygen diffusion through the film. The films were prepared with different thicknesses and component concentrations and were analyzed for water vapor and oxygen permeabilities, water and acid solubilities and mechanical properties. Results showed that the mixture improved film characteristics more than each of the individual components alone. The 1:1 mixture had properties of better permeability to water and oxygen. The composite films were completely soluble in water and acid, with the exception of the film with the highest gluten concentration, which was 50% soluble in water and acid. An increase in gluten concentration in the composite films resulted in a decrease in tensile strength. There was no significant difference in elongation at break between the composite films. No difference in thickness was detected either. Results showed that the mixture improved the characteristics more than of the individual components alone.

  5. Electron spin resonance study of the demagnetization fields of the ferromagnetic and paramagnetic films

    Directory of Open Access Journals (Sweden)

    I.I. Gimazov, Yu.I. Talanov

    2015-12-01

    Full Text Available The results of the electron spin resonance study of the La1-xCaxMnO3 manganite and the diphenyl-picrylhydrazyl thin films for the magnetic field parallel and perpendicular to plane of the films are presented. The temperature dependence of the demagnetizing field is obtained. The parameters of the Curie-Weiss law are estimated for the paramagnetic thin film.

  6. Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

    International Nuclear Information System (INIS)

    Tripathy, Sumanta K.; Rajeswari, V. P.

    2014-01-01

    Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn 3 O 4 , corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells

  7. Molecular and electronic structure of thin films of protoporphyrin(IX)Fe(III)Cl

    Science.gov (United States)

    Snyder, Shelly R.; White, Henry S.

    1991-11-01

    Electrochemical, scanning tunneling microscopy (STM), and tunneling spectroscopy studies of the molecular and electronic properties of thin films of protoporphyrin(IX)Fe(III)Cl (abbreviated as PP(IX)Fe(III)Cl) on highly oriented pyrolytic graphite (HOPG) electrodes are reported. PP(IX)Fe(III)Cl films are prepared by two different methods: (1) adsorption, yielding an electrochemically-active film, and (2) irreversible electrooxidative polymerization, yielding an electrochemically-inactive film. STM images, in conjunction with electro-chemical results, indicate that adsorption of PP(IX)Fe(III)Cl from aqueous solutions onto freshly cleaved HOPG results in a film comprised of molecular aggregates. In contrast, films prepared by irreversible electrooxidative polymerization of PP(IX)Fe(III)Cl have a denser, highly structured morphology, including what appear to be small pinholes (approx. 50A diameter) in an otherwise continuous film.

  8. Properties of commercial PVC-films with respect to electron dosimetry

    International Nuclear Information System (INIS)

    Miller, A.; Liqing, X.

    1985-05-01

    The properties of three commercially available polyvinyl chloride (PVC) film supplies and one made without additives were tested with respects to their application as routine dose monitors at electron accelerators. Dose fractionation was found to increase the response and the post-irradiation heat treatment was very critical for some of the films. (author)

  9. Electrical resistivity due to electron-phonon scattering in thin gadolinium films

    International Nuclear Information System (INIS)

    Urbaniak-Kucharczyk, A.

    1988-01-01

    The contribution to the electrical resistivity due to the electron-phonon scattering for the special case of h.c.p. structure is derived. The numerical results obtained for the case of polycrystalline gadolinum films show the resistivity dependence on the film thickness and the surface properties. (author)

  10. Electron transfer and energy transfer reactions in photoexcited a-nonathiophene/C60 films and solutions

    NARCIS (Netherlands)

    Janssen, R.A.J.; Moses, D.; Sariciftci, N.S.; Heeger, A.J.

    1994-01-01

    Photoexcitation of a nonathiophene in film or solution across the p-p* energy gap produces a metastable triplet state. In the presence of C60, on the other hand, an ultra fast electron transfer from the photoexcited nonathiophene onto C60 is observed in films, whereas in solution C60 is involved in

  11. Auger-electron spectroscopy investigation of thin Ag-As-S-Se films

    International Nuclear Information System (INIS)

    Todorov, R; Spasov, G; Petkov, K; Tasseva, J

    2010-01-01

    The photoinduced changes in the refractive index and optical band-gap of thin As 32 S 34 Se 34 films photodoped with silver were studied using spectrophotometric methods. The compositional profile of the films was revealed by means of Auger-electron spectroscopy.

  12. Auger-electron spectroscopy investigation of thin Ag-As-S-Se films

    Energy Technology Data Exchange (ETDEWEB)

    Todorov, R; Spasov, G; Petkov, K; Tasseva, J, E-mail: jordanka@clf.bas.b [Acad. J. Malinowski Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 109, 1113 Sofia (Bulgaria)

    2010-04-01

    The photoinduced changes in the refractive index and optical band-gap of thin As{sub 32}S{sub 34}Se{sub 34} films photodoped with silver were studied using spectrophotometric methods. The compositional profile of the films was revealed by means of Auger-electron spectroscopy.

  13. Gluten-free but also gluten-enriched (gluten+) diet prevent diabetes in NOD mice; the gluten enigma in type 1 diabetes

    Czech Academy of Sciences Publication Activity Database

    Funda, David P.; Kaas, A.; Tlaskalová, Helena; Buschard, K.

    2007-01-01

    Roč. 24, - (2007), s. 59-63 ISSN 1520-7552 R&D Projects: GA AV ČR IAA5020405; GA ČR GA303/06/1329 Institutional research plan: CEZ:AV0Z50200510 Keywords : gluten * gluten -free * type 1 diabetes Subject RIV: EE - Microbiology, Virology Impact factor: 3.087, year: 2007

  14. Lateral protonic/electronic hybrid oxide thin-film transistor gated by SiO2 nanogranular films

    International Nuclear Information System (INIS)

    Zhu, Li Qiang; Chao, Jin Yu; Xiao, Hui

    2014-01-01

    Ionic/electronic interaction offers an additional dimension in the recent advancements of condensed materials. Here, lateral gate control of conductivities of indium-zinc-oxide (IZO) films is reported. An electric-double-layer (EDL) transistor configuration was utilized with a phosphorous-doped SiO 2 nanogranular film to provide a strong lateral electric field. Due to the strong lateral protonic/electronic interfacial coupling effect, the IZO EDL transistor could operate at a low-voltage of 1 V. A resistor-loaded inverter is built, showing a high voltage gain of ∼8 at a low supply voltage of 1 V. The lateral ionic/electronic coupling effects are interesting for bioelectronics and portable electronics

  15. Lateral protonic/electronic hybrid oxide thin-film transistor gated by SiO{sub 2} nanogranular films

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Li Qiang, E-mail: lqzhu@nimte.ac.cn; Chao, Jin Yu; Xiao, Hui [Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)

    2014-12-15

    Ionic/electronic interaction offers an additional dimension in the recent advancements of condensed materials. Here, lateral gate control of conductivities of indium-zinc-oxide (IZO) films is reported. An electric-double-layer (EDL) transistor configuration was utilized with a phosphorous-doped SiO{sub 2} nanogranular film to provide a strong lateral electric field. Due to the strong lateral protonic/electronic interfacial coupling effect, the IZO EDL transistor could operate at a low-voltage of 1 V. A resistor-loaded inverter is built, showing a high voltage gain of ∼8 at a low supply voltage of 1 V. The lateral ionic/electronic coupling effects are interesting for bioelectronics and portable electronics.

  16. Strongly nonlinear electronic transport in Cr-Si composite films

    International Nuclear Information System (INIS)

    Burkov, A.T.; Vinzelberg, H.; Schumann, J.; Nakama, T.; Yagasaki, K.

    2004-01-01

    The phase formation, the resistivity and the thermopower of amorphous Cr 0.15 Si 0.85 , and nanocrystalline CrSi 2 -Si thin film composites have been studied. The films were produced by a magnetron sputtering of a composite target onto unheated substrates with subsequent crystallization of the film at high temperatures. As the film composite develops under the heat treatment from the initial amorphous state into the final polycrystalline material, two percolation thresholds were found. At first, the percolating cluster of nanocrystalline CrSi 2 is formed. However, this cluster is destroyed with further annealing due to crystallization and redistribution of Si. The composite films which are close to this insulating threshold reveal a strongly nonlinear conductivity. The conductivity increases with the current by two orders of magnitude

  17. Calculation of electron-beam induced displacement in thin films by using parameter-reduced formulas

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Qiang [College of Nuclear Science and Technology, Harbin Engineering University, Harbin 150001 (China); Chen, Di [Department of Nuclear Engineering, Texas A& M University, College Station, TX 77843 (United States); Wang, Qingyu; Li, Zhongyu [College of Nuclear Science and Technology, Harbin Engineering University, Harbin 150001 (China); Shao, Lin, E-mail: lshao@tamu.edu [Department of Nuclear Engineering, Texas A& M University, College Station, TX 77843 (United States)

    2017-03-01

    Based on the Mott cross sections of relativistic electron collisions with atoms, we calculate displacement creation by electron beams of arbitrary energies (up to 100 MeV) in thin films of arbitrary atomic numbers (up to Z = 90). In a comparison with Mont Carlo full damage cascade simulations, we find that total number of displacements in a film can be accurately estimated as the product of average displacements created per collision and average collision numbers in the film. To calculate average displacements per electron-atom collision, energy transfer from Mott cross section is combined with NRT model. To calculate collision numbers, mean deflection angles and multi-scattering theory are combined to extract collision number dependence on film thickness. For each key parameter, parameter-reduced formulas are obtained from data fitting. The fitting formulas provide a quick and accurate method to estimate radiation damage caused by electron beams.

  18. Scanning and transmission electron microscopy investigation of multiwall carbon nanotube/nickel oxide nanocomposite thin films

    CSIR Research Space (South Africa)

    Roro, Kittessa T

    2011-12-01

    Full Text Available Owing to their unique electronic and optical properties, nanocomposite thin films are widely used for converting solar radiation therapy into other conventional energy forms, such as heat and electricity. Carbon nanotube-based composites which can...

  19. Study of electron-beam-evaporated MgO films using electron diffraction, optical absorption and cathodoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Aboelfotoh, M.O.; Ramsey, J.N.

    1982-05-21

    Reflection high energy electron diffraction, optical absorption and cathodoluminescence were used to study MgO films deposited onto fused silica, single-crystal silicon and LiF substrates at various temperatures. Results showed that some of the same optical absorption and emission bands observed in X- or UV-irradiated, additively colored or mechanically deformed MgO crystals were observed in evaporated MgO films. The peak positions and the relative peak intensities of the optical absorption and emission bands depended on the substrate temperature during film deposition as well as on the structure of the film. The effect of heating the films in air and vacuum on the optical absorption and emission bands is also discussed.

  20. Gluten-free but also gluten-enriched (gluten+) diet prevent diabetes in NOD mice; the gluten enigma in type 1 diabetes

    DEFF Research Database (Denmark)

    Funda, D.P.; Kaas, A.; Tlaskalova-Hogenova, H.

    2008-01-01

    BACKGROUND: Environmental factors such as nutrition or exposure to infections play a substantial role in the pathogenesis of type 1 diabetes (T1D). We have previously shown that gluten-free, non-purified diet largely prevented diabetes in non-obese diabetic (NOD) mice. In this study we tested...... hypothesis that early introduction of gluten-enriched (gluten+) diet may increase diabetes incidence in NOD mice. METHODS: Standard, gluten-free, gluten+ modified Altromin diets and hydrolysed-casein-based Pregestimil diet were fed to NOD females and diabetes incidence was followed for 310 days. Insulitis...... score and numbers of gut mucosal lymphocytes were determined in non-diabetic animals. RESULTS: A significantly lower diabetes incidence (p diet (5.9%, n = 34) and Pregestimil diet (10%, n = 30) compared to mice on the standard Altromin diet (60.6%, n...

  1. Calibration of thin-film dosimeters irradiated with 80-120 kev electrons

    DEFF Research Database (Denmark)

    Helt-Hansen, J.; Miller, A.; McEwen, M.

    2004-01-01

    A method for calibration of thin-film dosimeters irradiated with 80-120keV electrons has been developed. The method is based on measurement of dose with a totally absorbing graphite calorimeter, and conversion of dose in the graphite calorimeter to dose in the film dosimeter by Monte Carlo calcul......V electron irradiation. The two calibrations were found to be equal within the estimated uncertainties of +/-10% at 1 s.d. (C) 2004 Elsevier Ltd. All rights reserved....

  2. Plasma alkylresorcinols reflect gluten intake and distinguish between gluten-rich and gluten-poor diets in a population at risk of metabolic syndrome

    DEFF Research Database (Denmark)

    Lind, Mads Vendelbo; Madsen, Mia Linda; Rumessen, Jüri J

    2016-01-01

    BACKGROUND: Many patients with celiac disease experience difficulties in adherence to a gluten-free diet. Methods for testing compliance to a gluten-free diet are costly and cumbersome. Thus, a simple biomarker of gluten intake is needed in a clinical setting and will be useful for epidemiologic...... in plasma total alkylresorcinols per 1-g increase in reported gluten intake (P gluten-free diet as well as to help investigations into the possible effects of gluten in the wider population. This trial...... 8 wk of a gluten-rich and gluten-poor diet separated by a washout period of ≥6 wk. We measured fasting plasma concentrations of alkylresorcinols to determine if they reflected differences in gluten intake as a secondary outcome of the original study. In addition, we investigated in 118 Danish adults...

  3. Adherence to a Gluten-Free Diet in Mexican Subjects with Gluten-Related Disorders: A High Prevalence of Inadvertent Gluten Intake.

    Science.gov (United States)

    Ramírez-Cervantes, Karen Lizzette; Romero-López, Angélica Viridiana; Núñez-Álvarez, Carlos Alberto; Uscanga-Domínguez, Luis F

    2016-01-01

    The rate of compliance with a gluten-free diet in patients with gluten-related disorders is unknown in most Latin American countries. To study the adherence to a gluten-free diet of Mexican individuals with celiac disease and nonceliac gluten sensitivity at the time of their first medical and nutritional consultation at a tertiary referral center. A cross-sectional study was performed. A specific questionnaire was used to gather information on demographics, clinical condition, and self-reported adherence to a gluten-free diet, and to determine strict compliance and intentional or inadvertent gluten consumption. All questionnaires were applied by a nutritionist with expertise in gluten-related disorders. Fifty-six patients with celiac disease and 24 with non-celiac gluten sensitivity were included. Overall, 46 (57.5%) subjects perceived themselves as strictly adherent; however, inadvertent gluten intake was frequent in both celiac disease and non-celiac gluten sensitivity patients (39.2 vs. 33.3%; p = 0.2). Intentional consumption was more prevalent in subjects with celiac disease (48.8 vs. 29.1%; p = 0.048) and individuals with non-celiac gluten sensitivity showed better adherence (37.5 vs. 12.5%; p = 0.035). The importance of a gluten-free diet is underestimated by Mexican patients with celiac disease. The role of a team with expertise in gluten-related disorders is essential to identify inadvertent gluten intake.

  4. Transferred metal electrode films for large-area electronic devices

    International Nuclear Information System (INIS)

    Yang, Jin-Guo; Kam, Fong-Yu; Chua, Lay-Lay

    2014-01-01

    The evaporation of metal-film gate electrodes for top-gate organic field-effect transistors (OFETs) limits the minimum thickness of the polymer gate dielectric to typically more than 300 nm due to deep hot metal atom penetration and damage of the dielectric. We show here that the self-release layer transfer method recently developed for high-quality graphene transfer is also capable of giving high-quality metal thin-film transfers to produce high-performance capacitors and OFETs with superior dielectric breakdown strength even for ultrathin polymer dielectric films. Dielectric breakdown strengths up to 5–6 MV cm −1 have been obtained for 50-nm thin films of polystyrene and a cyclic olefin copolymer TOPAS ® (Zeon). High-quality OFETs with sub-10 V operational voltages have been obtained this way using conventional polymer dielectrics and a high-mobility polymer semiconductor poly[2,5-bis(3-tetradecylthiophene-2-yl)thieno[3,2-b]thiophene-2,5-diyl]. The transferred metal films can make reliable contacts without damaging ultrathin polymer films, self-assembled monolayers and graphene, which is not otherwise possible from evaporated or sputtered metal films

  5. Electron transfer across anodic films formed on tin in carbonate-bicarbonate buffer solution

    International Nuclear Information System (INIS)

    Gervasi, C.A.; Folquer, M.E.; Vallejo, A.E.; Alvarez, P.E.

    2005-01-01

    Impedance and steady-state data were recorded in order to study the kinetics of electron transfer between passive tin electrodes and an electrolytic solution containing the K 3 Fe(CN) 6 -K 4 Fe(CN) 6 redox couple. Film thickness plays a key role in determining the type of electronic conduction of these oxide covered electrodes. Electron exchange with the oxide takes place with participation of the conduction band in the semiconducting film. A mechanism involving direct electron tunneling through the space charge barrier is the most suitable to interpret the experimental evidence

  6. Electron transfer across anodic films formed on tin in carbonate-bicarbonate buffer solution

    Energy Technology Data Exchange (ETDEWEB)

    Gervasi, C.A. [Universidad Nacional de La Plata (Argentina). Facultad de Ciencias Exactas; Universidad Nacional de La Plata (Argentina). Facultad de Ingenieria; Folquer, M.E. [Universidad Nacional de Tucaman (Argentina). Inst. de Quimica Fisica; Vallejo, A.E. [Universidad Nacional de La Plata (Argentina). Facultad de Ingenieria; Alvarez, P.E. [Universidad Nacional de Tucaman (Argentina). Inst. de Fisica

    2005-01-15

    Impedance and steady-state data were recorded in order to study the kinetics of electron transfer between passive tin electrodes and an electrolytic solution containing the K{sub 3}Fe(CN){sub 6}-K{sub 4}Fe(CN){sub 6} redox couple. Film thickness plays a key role in determining the type of electronic conduction of these oxide covered electrodes. Electron exchange with the oxide takes place with participation of the conduction band in the semiconducting film. A mechanism involving direct electron tunneling through the space charge barrier is the most suitable to interpret the experimental evidence. (Author)

  7. Problems in the measurement of electron-dose distribution with film dosimeters inserted into solid materials

    International Nuclear Information System (INIS)

    Okuda, Shuichi; Fukuda, Kyue; Tabata, Tatsuo; Okabe, Shigeru

    1981-01-01

    On the insertion of film dosimeters into solid materials, thin air gaps are formed. The influence of such gaps on measured profiles of depth-dose distributions was investigated for aluminum irradiated with collimated beams of 15-MeV electrons. Measurements were made by changing the gap width or the incidence angle of the electrons. The present results showed that streaming of incident electrons through the gaps resulted in the appearance of a peak and a minimum in a depth-dose curve measured. This effect was suppressed by the increase of the angle between the film and the electron-beam axis. (author)

  8. Control of composition and crystallinity in hydroxyapatite films deposited by electron cyclotron resonance plasma sputtering

    Science.gov (United States)

    Akazawa, Housei; Ueno, Yuko

    2014-01-01

    Hydroxyapatite (HAp) films were deposited by electron cyclotron resonance plasma sputtering under a simultaneous flow of H2O vapor gas. Crystallization during sputter-deposition at elevated temperatures and solid-phase crystallization of amorphous films were compared in terms of film properties. When HAp films were deposited with Ar sputtering gas at temperatures above 460 °C, CaO byproducts precipitated with HAp crystallites. Using Xe instead of Ar resolved the compositional problem, yielding a single HAp phase. Preferentially c-axis-oriented HAp films were obtained at substrate temperatures between 460 and 500 °C and H2O pressures higher than 1×10-2 Pa. The absorption signal of the asymmetric stretching mode of the PO43- unit (ν3) in the Fourier-transform infrared absorption (FT-IR) spectra was the narrowest for films as-crystallized during deposition with Xe, but widest for solid-phase crystallized films. While the symmetric stretching mode of PO43- (ν1) is theoretically IR-inactive, this signal emerged in the FT-IR spectra of solid-phase crystallized films, but was absent for as-crystallized films, indicating superior crystallinity for the latter. The Raman scattering signal corresponding to ν1 PO43- sensitively reflected this crystallinity. The surface hardness of as-crystallized films evaluated by a pencil hardness test was higher than that of solid-phase crystallized films.

  9. Stability of amorphous Ge-As(Sb)-Se films to high-energy electron irradiation

    International Nuclear Information System (INIS)

    Savchenko, N.D.

    1999-01-01

    The results of the investigation of high-energy electron (6.5 MeV) irradiation effect on structure, optical, electrical and mechanical properties for thin films obtained by thermal evaporation of Ge-As-Se and Ge-Sb-Se glasses have been presented. The electron-induced changes in film properties versus average coordination number and relative free volume for bulk glasses have been discussed. It has been found that the higher radiation stability is characteristic to the films deposited from the glasses with the lower relative free volume

  10. Thermal expansion coefficient measurement from electron diffraction of amorphous films in a TEM.

    Science.gov (United States)

    Hayashida, Misa; Cui, Kai; Malac, Marek; Egerton, Ray

    2018-05-01

    We measured the linear thermal expansion coefficients of amorphous 5-30 nm thick SiN and 17 nm thick Formvar/Carbon (F/C) films using electron diffraction in a transmission electron microscope. Positive thermal expansion coefficient (TEC) was observed in SiN but negative coefficients in the F/C films. In case of amorphous carbon (aC) films, we could not measure TEC because the diffraction radii required several hours to stabilize at a fixed temperature. Crown Copyright © 2018. Published by Elsevier B.V. All rights reserved.

  11. Fluorescence spectral shift of QD films with electron injection: Dependence on counterion proximity

    Science.gov (United States)

    Lu, Meilin; Li, Bo; Zhang, Yaxin; Liu, Weilong; Yang, Yanqiang; Wang, Yuxiao; Yang, Qingxin

    2017-05-01

    Due to the promising application of quantum dot (QD) films in solar cells, LEDs and environmental detectors, the fluorescence of charged QD films has achieved much attention during recent years. In this work, we observe the spectral shift of photoluminescence (PL) in charged CdSe/ZnS QD films controlled by electrochemical potential. The spectral center under negative bias changes from red-shift to blue-shift while introducing smaller inorganic counterions (potassium ions) into the electrolyte. This repeatable effect is attributed to the enhanced electron injection with smaller cations and the electronic perturbations of QD luminescence by these excess charges.

  12. Defects in CdSe thin films, induced by high energy electron irradiation

    International Nuclear Information System (INIS)

    Ion, L.; Antohe, S.; Tutuc, D.; Antohe, V.A.; Tazlaoanu, C.

    2004-01-01

    Defects induced in CdSe thin films by high energy electron irradiation are investigated by means of thermally stimulated currents (TSC) spectroscopy. Films were obtained by vacuum deposition from a single source and irradiated with a 5 x 10 13 electrons/cm 2 s -1 beam of 6-MeV energy. It was found that electrical properties of the films are controlled by a deep donor state, located at 0.38 eV below the bottom edge of the conduction band. Parameters of the traps responsible for the recorded TSC peaks were determined. (authors)

  13. Microstructural, thermal and antibacterial properties of electron beam irradiated Bombyx mori silk fibroin films

    Energy Technology Data Exchange (ETDEWEB)

    Asha, S.; Sanjeev, Ganesh, E-mail: ganeshsanjeev@rediffmail.com [Microtron Center, Department of Studies in Physics, Mangalore University, Mangalagangotri - 574199 (India); Sangappa [Department of Studies in Physics, Mangalore University, Mangalagangotri - 574199 (India); Naik, Prashantha; Chandra, K. Sharat [Department of Biosciences, Mangalore University, Mangalagangotri - 574199 (India)

    2014-04-24

    The Bombyx mori silk fibroin (SF) films were prepared by solution casting method and the effects of electron beam on structural, thermal and antibacterial responses of the prepared films were studied. The electron irradiation for different doses was carried out using 8 MeV Microtron facility at Mangalore University. The changes in microstructural parameters and thermal stability of the films were investigated using Wide Angle X-ray Scattering (WAXS) and thermogravimetric analysis (TGA) respectively. Both microstructuralline parameters (crystallite size and lattice strain (g in %)) and thermal stability of the irradiated films have increased with radiation dosage. Agar diffusion method demonstrated the antibacterial activity of SF film which was increased after irradiation on both Gram-positive and Gram-negative species.

  14. Surface electronic properties of discontinuous Pd films during hydrogen exposure

    International Nuclear Information System (INIS)

    Zhao, Ming; Nagata, Shinji; Shikama, Tatsuo; Inouye, Aichi; Yamamoto, Shunya; Yoshikawa, Masahito

    2011-01-01

    This paper explored the change in the surface resistance of the discontinuous palladium (Pd) films during hydrogen exposure. In our experiments, we observed a remarkable rise in the electrical resistance of the discontinuous film which consists of nano-sized particles, when it was exposed to thin hydrogen. By studying the resistance change ratio before and after hydrogen exposure, we have found that it demonstrates an inverse exponential relationship with the ratio of on-film particle radius to the inter island separation. This suggests that the change in the film resistance under hydrogen exposure is primarily associated with the variation of surface work function which is caused by the hydrogen absorption on the Pd surface. (author)

  15. Quantitative characterization of the composition, thickness and orientation of thin films in the analytical electron microscope

    International Nuclear Information System (INIS)

    Williams, D.B.; Watanabe, M.; Papworth, A.J.; Li, J.C.

    2003-01-01

    Compositional variations in thin films can introduce lattice-parameter changes and thus create stresses, in addition to the more usual stresses introduced by substrate-film mismatch, differential thermal expansion, etc. Analytical electron microscopy comprising X-ray energy-dispersive spectrometry within a probe-forming field-emission gun scanning transmission electron microscope (STEM) is one of the most powerful methods of composition measurement on the nanometer scale, essential for thin-film analysis. Recently, with the development of improved X-ray collection efficiencies and quantitative computation methods it has proved possible to map out composition variations in thin films with a spatial resolution approaching 1-2 nm. Because the absorption of X-rays is dependent on the film thickness, concurrent composition and film thickness determination is another advantage of X-ray microanalysis, thus correlating thickness and composition variations, either of which may contribute to stresses in the film. Specific phenomena such as segregation to interfaces and boundaries in the film are ideally suited to analysis by X-ray mapping. This approach also permits multiple boundaries to be examined, giving some statistical certainty to the analysis particularly in nano-crystalline materials with grain sizes greater than the film thickness. Boundary segregation is strongly affected by crystallographic misorientation and it is now possible to map out the orientation between many different grains in the (S)TEM

  16. Electron and ion beam degradation effects in AES analysis of silicon nitride thin films

    International Nuclear Information System (INIS)

    Fransen, F.; Vanden Berghe, R.; Vlaeminck, R.; Hinoul, M.; Remmerie, J.; Maes, H.E.

    1985-01-01

    Silicon nitride films are currently investigated by AES combined with ion profiling techniques for their stoichiometry and oxygen content. During this analysis, ion beam and primary electron effects were observed. The effect of argon ion bombardment is the preferential sputtering of nitrogen, forming 'covalent' silicon at the surface layer (AES peak at 91 eV). The electron beam irradiation results in a decrease of the covalent silicon peak, either by an electron beam annealing effect in the bulk of the silicon nitride film, or by an ionization enhanced surface diffusion process of the silicon (electromigration). By the electron beam annealing, nitrogen species are liberated in the bulk of the silicon nitride film and migrate towards the surface where they react with the covalent silicon. The ionization enhanced diffusion originates from local charging of the surface, induced by the electron beam. (author)

  17. Design of Novel Organic Thin Film Transistors for Wearable Electronics

    Science.gov (United States)

    2012-08-01

    TECHNOLOGICAL ACHIEVEMENTS 7 1.0 INTRODUCTION 7 2.0 CHARACTERISTICS OF OTFTS 3.0 USE OF PHTHALOCYANINE AS A BIOSENSOR 8 4.0 CATHODIC ELECTRODEPOSITION ...public release; distribution is unlimited. 12 4.0 CATHODIC ELECTRODEPOSITION OF ANATASE HIGH DİELECTRIC CONSTANT TITANIA Polycrystalline...oxidised film which is used and left in air for 3 months. 11 5 Raman Spectra for TiO2 films electrodeposited at temperatures: (a) 296K, (b) 318K

  18. Electronic structure investigation of oxidized aluminium films with electron momentum spectroscopy

    International Nuclear Information System (INIS)

    Guo, X.; Canney, S.; Kheifets, A.S.; Vos, M.; Fang, Z.; Utteridge, S.; McCarthy, I.E.; Weigold, E.

    1996-09-01

    Electron momentum spectroscopy (EMS) of (e, 2e) measurements with oxidized aluminium thin films have been performed. Due to the surface sensitive mature of the EMS spectrometer employed the measured (e, 2e) events come from the front oxidized layer as viewed by the electron detectors. The measurements show clearly two major features in the spectral momentum density distribution and they are related to the upper valence band and the lower valence band of aluminum oxide. The first is a 'dual parabola' energy-momentum dispersion pattern spanning about 8 eV in the upper valence band. This 'dual parabola' pattern has been qualitatively reproduced by a linear muffin-tin orbital (LMTO) calculation on spherically averaged α-A1 2 O 3 with nearly the same energy span. In the lower valence band, the LMTO calculation indicates a dispersion spanning about 5 eV, and the measured spectral momentum density plot shows a similar 'bowl' shape but with less dispersion. The possible causes which blur the dispersion in the lower valence band are discussed. Other features in the spectral momentum density distribution are also discussed and compared with the LMTO calculation. 45 refs., 1 tab., 10 figs

  19. Adsorbate-induced modification of electronic band structure of epitaxial Bi(111) films

    Energy Technology Data Exchange (ETDEWEB)

    Matetskiy, A.V., E-mail: mateckij@iacp.dvo.ru [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); Bondarenko, L.V.; Tupchaya, A.Y.; Gruznev, D.V. [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); Eremeev, S.V. [Institute of Strength Physics and Materials Science, 634021 Tomsk (Russian Federation); Tomsk State University, 634050 Tomsk (Russian Federation); Zotov, A.V. [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); School of Natural Sciences, Far Eastern Federal University, 690950 Vladivostok (Russian Federation); Department of Electronics, Vladivostok State University of Economics and Service, 690600 Vladivostok (Russian Federation); Saranin, A.A. [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); School of Natural Sciences, Far Eastern Federal University, 690950 Vladivostok (Russian Federation)

    2017-06-01

    Highlights: • Modification of electronic properties of ultrathin Bi films by adsorbates is demonstrated. • Due to electron doping from Cs adatoms, surface-state bands shift to higher binding energies. • As a result, only electron pockets are left in the Fermi map. • Tin acts as an acceptor dopant for Bi, shifting Fermi level upward. • As a result, only hole pockets are left in the Fermi map. - Abstract: Changes of the electronic band structure of Bi(111) films on Si(111) induced by Cs and Sn adsorption have been studied using angle-resolved photoemission spectroscopy and density functional theory calculations. It has been found that small amounts of Cs when it presents at the surface in a form of the adatom gas leads to shifting of the surface and quantum well states to the higher binding energies due to the electron donation from adsorbate to the Bi film. In contrast, adsorbed Sn dissolves into the Bi film bulk upon heating and acts as an acceptor dopant, that results in shifting of the surface and quantum well states upward to the lower binding energies. These results pave the way to manipulate with the Bi thin film electron band structure allowing to achieve a certain type of conductivity (electron or hole) with a single spin channel at the Fermi level making the adsorbate-modified Bi a reliable base for prospective spintronics applications.

  20. A probabilistic model of the electron transport in films of nanocrystals arranged in a cubic lattice

    Energy Technology Data Exchange (ETDEWEB)

    Kriegel, Ilka [Department of Nanochemistry, Istituto Italiano di Tecnologia (IIT), via Morego, 30, 16163 Genova (Italy); Scotognella, Francesco, E-mail: francesco.scotognella@polimi.it [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Center for Nano Science and Technology@PoliMi, Istituto Italiano di Tecnologia, Via Giovanni Pascoli, 70/3, 20133 Milan (Italy)

    2016-08-01

    The fabrication of nanocrystal (NC) films, starting from colloidal dispersion, is a very attractive topic in condensed matter physics community. NC films can be employed for transistors, light emitting diodes, lasers, and solar cells. For this reason the understanding of the film conductivity is of major importance. In this paper we describe a probabilistic model that allows the prediction of the conductivity of NC films, in this case of a cubic lattice of Lead Selenide or Cadmium Selenide NCs. The model is based on the hopping probability between NCs. The results are compared to experimental data reported in literature. - Highlights: • Colloidal nanocrystal (NC) film conductivity is a topic of major importance. • We present a probabilistic model to predict the electron conductivity in NC films. • The model is based on the hopping probability between NCs. • We found a good agreement between the model and data reported in literature.

  1. Epitaxial growth and electronic structure of oxyhydride SrVO{sub 2}H thin films

    Energy Technology Data Exchange (ETDEWEB)

    Katayama, Tsukasa; Chikamatsu, Akira, E-mail: chikamatsu@chem.s.u-tokyo.ac.jp; Yamada, Keisuke; Onozuka, Tomoya [Department of Chemistry, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033 (Japan); Shigematsu, Kei [Kanagawa Academy of Science and Technology, Kawasaki, Kanagawa 213-0012 (Japan); Minohara, Makoto; Kumigashira, Hiroshi [Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801 (Japan); Ikenaga, Eiji [Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8, Mikazuki-cho, Hyogo 679-5198 (Japan); Hasegawa, Tetsuya [Department of Chemistry, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033 (Japan); Kanagawa Academy of Science and Technology, Kawasaki, Kanagawa 213-0012 (Japan)

    2016-08-28

    Oxyhydride SrVO{sub 2}H epitaxial thin films were fabricated on SrTiO{sub 3} substrates via topotactic hydridation of oxide SrVO{sub 3} films using CaH{sub 2}. Structural and composition analyses suggested that the SrVO{sub 2}H film possessed one-dimensionally ordered V-H{sup −}-V bonds along the out-of-plane direction. The synthesis temperature could be lowered by reducing the film thickness, and the SrVO{sub 2}H film was reversible to SrVO{sub 3} by oxidation through annealing in air. Photoemission and X-ray absorption spectroscopy measurements revealed the V{sup 3+} valence state in the SrVO{sub 2}H film, indicating that the hydrogen existed as hydride. Furthermore, the electronic density of states was highly suppressed at the Fermi energy, consistent with the prediction that tetragonal distortion induces metal to insulation transition.

  2. Epitaxial growth and electronic structure of oxyhydride SrVO2H thin films

    Science.gov (United States)

    Katayama, Tsukasa; Chikamatsu, Akira; Yamada, Keisuke; Shigematsu, Kei; Onozuka, Tomoya; Minohara, Makoto; Kumigashira, Hiroshi; Ikenaga, Eiji; Hasegawa, Tetsuya

    2016-08-01

    Oxyhydride SrVO2H epitaxial thin films were fabricated on SrTiO3 substrates via topotactic hydridation of oxide SrVO3 films using CaH2. Structural and composition analyses suggested that the SrVO2H film possessed one-dimensionally ordered V-H--V bonds along the out-of-plane direction. The synthesis temperature could be lowered by reducing the film thickness, and the SrVO2H film was reversible to SrVO3 by oxidation through annealing in air. Photoemission and X-ray absorption spectroscopy measurements revealed the V3+ valence state in the SrVO2H film, indicating that the hydrogen existed as hydride. Furthermore, the electronic density of states was highly suppressed at the Fermi energy, consistent with the prediction that tetragonal distortion induces metal to insulation transition.

  3. Sputter Deposited TiOx Thin-Films as Electron Transport Layers in Organic Solar Cells

    DEFF Research Database (Denmark)

    Mirsafaei, Mina; Bomholt Jensen, Pia; Lakhotiya, Harish

    transparency and favorable energy-level alignment with many commonly used electron-acceptor materials. There are several methods available for fabricating compact TiOx thin-films for use in organic solar cells, including sol-gel solution processing, spray pyrolysis and atomic-layer deposition; however...... of around 7%, by incorporating sputter deposited TiOx thin-films as electron-transport and exciton-blocking layers. In the work, we report on the effect of different TiOx deposition temperatures and thicknesses on the organic-solar-cell device performance. Besides optical characterization, AFM and XRD...... analyses are performed to characterize the morphology and crystal structure of the films, and external quantum efficiency measurements are employed to shed further light on the device performance. Our study presents a novel method for implementation of TiOx thin-films as electron-transport layer in organic...

  4. Electrical, optical, and electronic properties of Al:ZnO films in a wide doping range

    International Nuclear Information System (INIS)

    Valenti, Ilaria; Valeri, Sergio; Benedetti, Stefania; Bona, Alessandro di; Lollobrigida, Valerio; Perucchi, Andrea; Di Pietro, Paola; Lupi, Stefano; Torelli, Piero

    2015-01-01

    The combination of photoemission spectroscopies, infrared and UV-VIS absorption, and electric measurements has allowed to clarify the mechanisms governing the conductivity and the electronic properties of Al-doped ZnO (AZO) films in a wide doping range. The contribution of defect-related in-gap states to conduction has been excluded in optimally doped films (around 4 at. %). The appearance of gap states at high doping, the disappearance of occupied DOS at Fermi level, and the bands evolution complete the picture of electronic structure in AZO when doped above 4 at. %. In this situation, compensating defects deplete the conduction band and increase the electronic bandgap of the material. Electrical measurements and figure of merit determination confirm the high quality of the films obtained by magnetron sputtering, and thus allow to extend their properties to AZO films in general

  5. Electrical, optical, and electronic properties of Al:ZnO films in a wide doping range

    Energy Technology Data Exchange (ETDEWEB)

    Valenti, Ilaria; Valeri, Sergio [CNR, Istituto Nanoscienze, S3, Via G. Campi 213/a, 41125 Modena (Italy); Dipartimento di Scienze Fisiche, Informatiche e Matematiche, Università di Modena e Reggio Emilia, Via G. Campi 213/a, 41125 Modena (Italy); Benedetti, Stefania, E-mail: stefania.benedetti@unimore.it; Bona, Alessandro di [CNR, Istituto Nanoscienze, S3, Via G. Campi 213/a, 41125 Modena (Italy); Lollobrigida, Valerio [Dipartimento di Scienze, Università Roma Tre, I-00146 Rome, Italy and Dipartimento di Matematica e Fisica, Università Roma Tre, I-00146 Rome (Italy); Perucchi, Andrea; Di Pietro, Paola [INSTM Udr Trieste-ST and Elettra-Sincrotrone Trieste S.C.p.A., Area Science Park, I-34012 Trieste (Italy); Lupi, Stefano [CNR-IOM and Dipartimento di Fisica, Università di Roma Sapienza, P.le Aldo Moro 2, I-00185 Roma (Italy); Torelli, Piero [Laboratorio TASC, IOM-CNR, S.S. 14 km 163.5, Basovizza, I-34149 Trieste (Italy)

    2015-10-28

    The combination of photoemission spectroscopies, infrared and UV-VIS absorption, and electric measurements has allowed to clarify the mechanisms governing the conductivity and the electronic properties of Al-doped ZnO (AZO) films in a wide doping range. The contribution of defect-related in-gap states to conduction has been excluded in optimally doped films (around 4 at. %). The appearance of gap states at high doping, the disappearance of occupied DOS at Fermi level, and the bands evolution complete the picture of electronic structure in AZO when doped above 4 at. %. In this situation, compensating defects deplete the conduction band and increase the electronic bandgap of the material. Electrical measurements and figure of merit determination confirm the high quality of the films obtained by magnetron sputtering, and thus allow to extend their properties to AZO films in general.

  6. Low-temperature (200 C or below) fabrication of diamond films for electronic application

    International Nuclear Information System (INIS)

    Hiraki, A.

    2003-01-01

    Fabrication of Diamond (including Diamond Like Carbon: DLC) films as electronic materials, for example: to be used as electron-emitter, requires several following conditions. They are: 1 ) Low temperature fabrication (or deposition on several substrates and sometimes ones with low melting point, like glasses) below 400 C, 2) Wide area film deposition onto wide substrates of several square inches, like Si wafer and glass substrate, 3) Reproducible deposition of well defined film quality, 4) others. In these respects, we have initiated, in the author's laboratories at Osaka University and Kochi University of Technology, a quite new approach to satisfy the above requirements by using microwave plasma CVD under a magnetic field to be called as m agneto-active plasma CVD . The films fabricated by the magnets-active plasma CVD and also recently by cathodic arc methods combined with cur special nano-seeding method, have been utilized for electron emitter to exhibit very high efficiency. (Author)

  7. Electron irradiation effects on partially fluorinated polymer films: Structure-property relationships

    International Nuclear Information System (INIS)

    Nasef, Mohamed Mahmoud; Dahlan, Khairul Zaman M.

    2003-01-01

    The effects of electron beam irradiation on two partially fluorinated polymer films i.e. poly(vinylidene fluoride) (PVDF) and poly(ethylene-tetrafluoroethylene) copolymer (ETFE) are studied at doses ranging from 100 to 1200 kGy in air at room temperature. Chemical structure, thermal and mechanical properties of irradiated films are investigated. FTIR show that both PVDF and ETFE films undergo similar changes in their chemical structures including the formation of carbonyl groups and double bonding. The changes in melting and crystallisation temperatures (T m and T c ) in both irradiated films are functions of irradiation dose and reflect the disorder in the chemical structure caused by the competition between crosslinking and chain scission. The heat of melting (ΔH m ) and the degree of crystallinity (X c ) of PVDF films show no significant changes with the dose increase, whereas those of ETFE films are reduced rapidly after the first 100 kGy. The tensile strength of PVDF films is improved by irradiation compared to its rapid deterioration in ETFE films, which stemmed from the degradation prompted by the presence of radiation sensitive tetrafluoroethylene (TFE) comonomer units. The elongation at break of both films drops gradually with the dose increase indicating the formation of predominant crosslinked structures at high doses. However, the response of each polymer to crosslinking and main chain scission at various irradiation doses varies from PVDF to ETFE films

  8. Estimated levels of gluten incidentally present in a Canadian gluten-free diet.

    Science.gov (United States)

    La Vieille, Sébastien; Dubois, Sheila; Hayward, Stephen; Koerner, Terence B

    2014-02-21

    Avoiding exposure to gluten is currently the only effective treatment for celiac disease. However, the evidence suggests that for most affected individuals, exposure to less than 10 mg/day is unlikely to cause histological changes to the intestinal mucosa. The daily diet of people with celiac disease does not rely solely on gluten-free pre-packaged foods, but also on naturally gluten-free grains (e.g., rice, buckwheat, ...) and foods with grain-derived ingredients (i.e., flour and starches) used for cooking and baking at home. The objective of this study was to estimate the level of incidental gluten potentially present in gluten-free diets from a Canadian perspective. We have conducted gluten exposure estimations from grain-containing foods and foods with grain-derived ingredients, taking into consideration the various rates of food consumption by different sex and age groups. These estimates have concluded that if gluten was present at levels not exceeding 20 ppm, exposure to gluten would remain below 10 mg per day for all age groups studied. However, in reality the level of gluten found in naturally gluten-free ingredients is not static and there may be some concerns related to the flours made from naturally gluten-free cereal grains. It was found that those containing a higher level of fiber and that are frequently used to prepare daily foods by individuals with celiac disease could be a concern. For this category of products, only the flours and starches labelled "gluten-free" should be used for home-made preparations.

  9. Estimated Levels of Gluten Incidentally Present in a Canadian Gluten-Free Diet

    Directory of Open Access Journals (Sweden)

    Sébastien La Vieille

    2014-02-01

    Full Text Available Avoiding exposure to gluten is currently the only effective treatment for celiac disease. However, the evidence suggests that for most affected individuals, exposure to less than 10 mg/day is unlikely to cause histological changes to the intestinal mucosa. The daily diet of people with celiac disease does not rely solely on gluten-free pre-packaged foods, but also on naturally gluten-free grains (e.g., rice, buckwheat, ... and foods with grain-derived ingredients (i.e., flour and starches used for cooking and baking at home. The objective of this study was to estimate the level of incidental gluten potentially present in gluten-free diets from a Canadian perspective. We have conducted gluten exposure estimations from grain-containing foods and foods with grain-derived ingredients, taking into consideration the various rates of food consumption by different sex and age groups. These estimates have concluded that if gluten was present at levels not exceeding 20 ppm, exposure to gluten would remain below 10 mg per day for all age groups studied. However, in reality the level of gluten found in naturally gluten-free ingredients is not static and there may be some concerns related to the flours made from naturally gluten-free cereal grains. It was found that those containing a higher level of fiber and that are frequently used to prepare daily foods by individuals with celiac disease could be a concern. For this category of products, only the flours and starches labelled “gluten-free” should be used for home-made preparations.

  10. Biofabricated film with enzymatic and redox-capacitor functionalities to harvest and store electrons

    International Nuclear Information System (INIS)

    Liba, Benjamin D; Kim, Eunkyoung; Martin, Alexandra N; Liu Yi; Bentley, William E; Payne, Gregory F

    2013-01-01

    Exciting opportunities in bioelectronics will be facilitated by materials that can bridge the chemical logic of biology and the digital logic of electronics. Here we report the fabrication of a dual functional hydrogel film that can harvest electrons from its chemical environment and store these electrons by switching the film's redox-state. The hydrogel scaffold was formed by the anodic deposition of the aminopolysaccharide chitosan. Electron-harvesting function was conferred by co-depositing the enzyme glucose dehydrogenase (GDH) with chitosan. GDH catalyzes the transfer of electrons from glucose to the soluble redox-shuttle NADP + . Electron-storage function was conferred by the redox-active food phenolic chlorogenic acid (CA) that was enzymatically grafted to the chitosan scaffold using tyrosinase. The grafted CA undergoes redox-cycling reactions with NADPH resulting in the net transfer of electrons to the film where they are stored in the reduced state of CA. The individual and dual functionalities of these films were demonstrated experimentally. There are three general conclusions from this proof-of-concept study. First, enzymatically-grafted catecholic moieties confer redox-capacitor function to the chitosan scaffold. Second, biological materials (i.e. chitosan and CA) and mechanisms (i.e. tyrosinase-mediated grafting) allow the reagentless fabrication of functional films that should be environmentally-friendly, safe and potentially even edible. Finally, the film's ability to mediate the transfer of electrons from a biological metabolite to an electrode suggests an approach to bridge the chemical logic of biology with the digital logic of electronics. (paper)

  11. Smooth Growth of Organic Semiconductor Films on Graphene for High-Efficiency Electronics

    NARCIS (Netherlands)

    Hlawacek, G.; Khokhar, F.S.; van Gastel, Raoul; Poelsema, Bene; Teichert, Christian

    2011-01-01

    High-quality thin films of conjugated molecules with smooth interfaces are important to assist the advent of organic electronics. Here, we report on the layer-by-layer growth of the organic semiconductor molecule p-sexiphenyl (6P) on the transparent electrode material graphene. Low energy electron

  12. Studies of ultrathin magnetic films and particle-surface interactions with spin-sensitive electron spectroscopies

    International Nuclear Information System (INIS)

    Walters, G.K.; Dunning, F.B.

    1991-06-01

    Research during the current grant year has focused on: Investigation of probing depth in electron scattering from epitaxially grown paramagnetic films by means of Spin-Polarized Electron Energy Loss Spectroscopy; and studies of the dynamics of metastable He(2 3 S) deexcitation at surfaces utilizing Spin-Polarized Metastable Deexcitation Spectroscopy . This report discussed this research

  13. Thin-film thickness measurement using x-ray peak ratioing in the scanning electron microscope

    International Nuclear Information System (INIS)

    Elliott, N.E.; Anderson, W.E.; Archuleta, T.A.; Stupin, D.M.

    1981-01-01

    The procedure used to measure laser target film thickness using a scanning electron microscope is summarized. This method is generally applicable to any coating on any substrate as long as the electron energy is sufficient to penetrate the coating and the substrate produces an x-ray signal which can pass back through the coating and be detected

  14. Balancing hole and electron conduction in ambipolar split-gate thin-film Transistors

    NARCIS (Netherlands)

    Yoo, H.; Ghittorelli, M.; Lee, D.-K.; Smits, E.C.P.; Gelinck, G.H.; Ahn, H.; Lee, H.-K.; Torricelli, F.; Kim, J.-J.

    2017-01-01

    Complementary organic electronics is a key enabling technology for the development of new applications including smart ubiquitous sensors, wearable electronics, and healthcare devices. High-performance, high-functionality and reliable complementary circuits require n- and p-type thin-film

  15. Symptomatic suspected gluten exposure is common among patients with coeliac disease on a gluten-free diet.

    Science.gov (United States)

    Silvester, J A; Graff, L A; Rigaux, L; Walker, J R; Duerksen, D R

    2016-09-01

    A gluten-free diet is the only recommended treatment for coeliac disease. To determine the prevalence and characteristics of reactions to gluten among persons with coeliac disease on a gluten-free diet. Adults with biopsy proven, newly diagnosed coeliac disease were prospectively enrolled. A survey related to diet adherence and reactions to gluten was completed at study entry and 6 months. The Coeliac Symptom Index, Coeliac Diet Assessment Tool (CDAT) and Gluten-Free Eating Assessment Tool (GF-EAT) were used to measure coeliac disease symptoms and gluten-free diet adherence. Of the 105 participants, 91% reported gluten exposure gluten was reported by 66%. Gluten consumption was unsuspected until a reaction occurred (63%) or resulted from problems ordering in a restaurant (29%). The amount of gluten consumed ranged from cross-contact (30%) to a major ingredient (10%). Median time to symptom onset was 1 h (range 10 min to 48 h), and median symptom duration was 24 h (range 1 h to 8 days). Common symptoms included abdominal pain (80%), diarrhoea (52%), fatigue (33%), headache (30%) and irritability (29%). Reactions to suspected gluten exposure are common among patients with coeliac disease on a gluten-free diet. Eating at restaurants and other peoples' homes remain a risk for unintentional gluten exposure. When following individuals with coeliac disease, clinicians should include questions regarding reactions to gluten as part of their assessment of gluten-free diet adherence. © 2016 John Wiley & Sons Ltd.

  16. Backscattered electron emission after proton impact on carbon and gold films: Experiments and simulations

    Energy Technology Data Exchange (ETDEWEB)

    Hespeels, F.; Heuskin, A.C. [University of Namur, PMR, 61 rue de Bruxelles, B-5000 Namur (Belgium); Scifoni, E. [TIFPA-INFN, Trento Institute for Fundamental Physics and Applications, Via Sommarive 14, I-38123 Trento (Italy); GSI-Helmholtzzentrum für Schwerionenforschung, Biophysik, Max Planck-Strasse 1, D-64291 Darmstadt (Germany); Kraemer, M. [GSI-Helmholtzzentrum für Schwerionenforschung, Biophysik, Max Planck-Strasse 1, D-64291 Darmstadt (Germany); Lucas, S., E-mail: stephane.lucas@unamur.be [University of Namur, PMR, 61 rue de Bruxelles, B-5000 Namur (Belgium)

    2017-06-15

    This work aims at measuring the proton induced secondary electron energy spectra from nanometer thin films. Backscattered electron energy spectra were measured within an energy range from 0 to 600 eV using a Retarding Field Analyser (RFA). This paper presents energy spectra obtained for proton (0.5 MeV; 1 MeV; 1.5 MeV; 2 MeV) irradiation of thin carbon films (50 and 100 nm thick) and thin gold film (200 nm). These experimental spectra were compared with Monte Carlo simulations based on TRAX code and Geant4 simulation toolkit. Good agreement between experimental, TRAX and Geant4 results were observed for the carbon target. For the gold target, we report major differences between both Monte Carlo environments. Limitation of Geant4 models for low energy electron emission was highlighted. On the contrary, TRAX simulations present encouraging results for the modeling of low-energy electron emission from gold target.

  17. GAGG:ce single crystalline films: New perspective scintillators for electron detection in SEM.

    Science.gov (United States)

    Bok, Jan; Lalinský, Ondřej; Hanuš, Martin; Onderišinová, Zuzana; Kelar, Jakub; Kučera, Miroslav

    2016-04-01

    Single crystal scintillators are frequently used for electron detection in scanning electron microscopy (SEM). We report gadolinium aluminum gallium garnet (GAGG:Ce) single crystalline films as a new perspective scintillators for the SEM. For the first time, the epitaxial garnet films were used in a practical application: the GAGG:Ce scintillator was incorporated into a SEM scintillation electron detector and it showed improved image quality. In order to prove the GAGG:Ce quality accurately, the scintillation properties were examined using electron beam excitation and compared with frequently used scintillators in the SEM. The results demonstrate excellent emission efficiency of the GAGG:Ce single crystalline films together with their very fast scintillation decay useful for demanding SEM applications. Copyright © 2016 Elsevier B.V. All rights reserved.

  18. Improved support films for electron microscopy of beam sensitive specimens

    International Nuclear Information System (INIS)

    Taylor, J.R.; Glaeser, R.M.

    1987-01-01

    Preliminary results indicate that technical innovations can address the problem of beam-induced movement and provide improved prospects for high resolution imaging of beam-sensitive specimens. Second-generation experiments with microgrid supports are in progress with efforts focusing on the objectives of maximizing the contact between the carbon film and its microgrid support and on improving the flatness of microgrids. When more robust support films are available they will be used in conjunction with small spot illumination. 4 refs., 2 figs

  19. Quantitative Analysis of Electron Beam Damage in Organic Thin Films

    OpenAIRE

    Leijten, Zino J. W. A.; Keizer, Arthur D. A.; de With, Gijsbertus; Friedrich, Heiner

    2017-01-01

    In transmission electron microscopy (TEM) the interaction of an electron beam with polymers such as P3HT:PCBM photovoltaic nanocomposites results in electron beam damage, which is the most important factor limiting acquisition of structural or chemical data at high spatial resolution. Beam effects can vary depending on parameters such as electron dose rate, temperature during imaging, and the presence of water and oxygen in the sample. Furthermore, beam damage will occur at different length s...

  20. Electronic structures of the L-cysteine film on dental alloys

    Energy Technology Data Exchange (ETDEWEB)

    Ogawa, K., E-mail: e7141@cc.saga-u.ac.jp [Synchrotron Light Application Center, Saga University, Saga 840-8502 (Japan); Tsujibayashi, T. [Department of Physics, Osaka Dental University, Osaka 573-1121 (Japan); Takahashi, K.; Azuma, J. [Synchrotron Light Application Center, Saga University, Saga 840-8502 (Japan); Kakimoto, K. [Department of Geriatric Dentistry, Osaka Dental University, Osaka 573-1121 (Japan); Kamada, M. [Synchrotron Light Application Center, Saga University, Saga 840-8502 (Japan)

    2011-04-15

    Research highlights: {yields} The electronic structures of dental alloys and L-cysteine film were studied by PES. {yields} The density of states in the dental alloy originates from Au and Cu as constituents. {yields} The Cu-3d states contribute dominantly to the occupied states near the Fermi level. {yields} The electronic structure of L-cysteine thin film is different from the thick film. {yields} The bonding between Cu-3d and S-3sp states are formed at the interface. - Abstract: Metal-organic interfaces have been attracting continuous attention in many fields including basic biosciences. The surface of dental alloys could be one of such interfaces since they are used in a circumstance full of organic compounds such as proteins and bacteria. In this work, electronic structures of Au-dominant dental alloys, which have Ag and Cu besides Au, and those of L-cysteine on the dental alloys have been studied by photoelectron spectroscopy with synchrotron radiation. It was found that the density of states in the dental alloy originate from gold and copper as constituents, and the Cu-3d states contribute dominantly to the occupied states near the Fermi level. It was also found that the electronic structure of the L-cysteine thin film on the dental alloy is different from that of the L-cysteine thick film. The result indicates the formation of the orbital bonding between Cu-3d and S-3sp states in the thin film on the dental alloy.

  1. Electronic structures of the L-cysteine film on dental alloys

    International Nuclear Information System (INIS)

    Ogawa, K.; Tsujibayashi, T.; Takahashi, K.; Azuma, J.; Kakimoto, K.; Kamada, M.

    2011-01-01

    Research highlights: → The electronic structures of dental alloys and L-cysteine film were studied by PES. → The density of states in the dental alloy originates from Au and Cu as constituents. → The Cu-3d states contribute dominantly to the occupied states near the Fermi level. → The electronic structure of L-cysteine thin film is different from the thick film. → The bonding between Cu-3d and S-3sp states are formed at the interface. - Abstract: Metal-organic interfaces have been attracting continuous attention in many fields including basic biosciences. The surface of dental alloys could be one of such interfaces since they are used in a circumstance full of organic compounds such as proteins and bacteria. In this work, electronic structures of Au-dominant dental alloys, which have Ag and Cu besides Au, and those of L-cysteine on the dental alloys have been studied by photoelectron spectroscopy with synchrotron radiation. It was found that the density of states in the dental alloy originate from gold and copper as constituents, and the Cu-3d states contribute dominantly to the occupied states near the Fermi level. It was also found that the electronic structure of the L-cysteine thin film on the dental alloy is different from that of the L-cysteine thick film. The result indicates the formation of the orbital bonding between Cu-3d and S-3sp states in the thin film on the dental alloy.

  2. Effects of Topography in Nano-Structured Thin Films : A Lorentz Transmission Electron Microscopy and Electron Holography Study

    NARCIS (Netherlands)

    Hosson, Jeff Th.M. De; Raedt, Hans A. De

    2003-01-01

    This paper aims at applying advanced transmission electron microscopy (TEM) to functional materials, such as ultra-soft magnetic films for high-frequency inductors, to reveal the structure-property relationship. The ultimate goal is to delineate a more quantitative way to obtain information of the

  3. Electronic Power System Application of Diamond-Like Carbon Films

    Science.gov (United States)

    Wu, Richard L. C.; Kosai, H.; Fries-Carr, S.; Weimer, J.; Freeman, M.; Schwarze, G. E.

    2003-01-01

    A prototype manufacturing technology for producing high volume efficiency and high energy density diamond-like carbon (DLC) capacitors has been developed. Unique dual ion-beam deposition and web-handling systems have been designed and constructed to deposit high quality DLC films simultaneously on both sides of capacitor grade aluminum foil and aluminum-coated polymer films. An optimized process, using inductively coupled RF ion sources, has been used to synthesize electrically robust DLC films. DLC films are amorphous and highly flexible, making them suitable for the production of wound capacitors. DLC capacitors are reliable and stable over a wide range of AC frequencies from 20 Hz to 1 MHz, and over a temperature range from .500 C to 3000 C. The compact DLC capacitors offer at least a 50% decrease in weight and volume and a greater than 50% increase in temperature handling capability over equal value capacitors built with existing technologies. The DLC capacitors will be suitable for high temperature, high voltage, pulsed power and filter applications.

  4. Electronic properties of intrinsic and doped amorphous silicon carbide films

    International Nuclear Information System (INIS)

    Vetter, M.; Voz, C.; Ferre, R.; Martin, I.; Orpella, A.; Puigdollers, J.; Andreu, J.; Alcubilla, R.

    2006-01-01

    Hydrogenated amorphous silicon carbide (a-SiC x : H) films have shown excellent surface passivation of crystalline silicon. With the aim of large area deposition of these films the influence of the rf plasma power was investigated. It is found that homogenous deposition with effective surface recombination velocity lower than 100 cms -1 is possible up to 6'' diameter in a simple parallel plate reactor by optimizing deposition parameters. For application in solar cell processes the conductivity of these a-SiC x : H films might become of importance since good surface passivation results from field-effect passivation which needs an insulating dielectric layer. Therefore, the temperature dependence of the dark dc conductivity of these films was investigated in the temperature range from - 20 to 260 deg. C. Two transition temperatures, T s ∼80 deg. C and T s ∼170 deg. C, were found where conductivity increases, resp. decreases over-exponential. From Arrhenius plots activation energy (E a ) and conductivity pre-factor (σ 0 ) were calculated for a large number of samples with different composition. A correlation between E a and σ 0 was found giving a Meyer-Neldel relation with a slope of 59 mV, corresponding to a material characteristic temperature T m = 400 deg. C, and an intercept at σ 00 = 0.1 Ω -1 cm -1

  5. Surface chemistry and electronic structure of nonpolar and polar GaN films

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Monu; Krishna, T.C. Shibin; Aggarwal, Neha; Gupta, Govind, E-mail: govind@nplindia.org

    2015-08-01

    Highlights: • Surface chemistry and electronic structure of polar and nonpolar GaN is reported. • Influence of polarization on electron affinity of p & np GaN films is investigated. • Correlation between surface morphology and polarity has been deduced. - Abstract: Photoemission and microscopic analysis of nonpolar (a-GaN/r-Sapphire) and polar (c-GaN/c-Sapphire) epitaxial gallium nitride (GaN) films grown via RF-Molecular Beam Epitaxy is reported. The effect of polarization on surface properties like surface states, electronic structure, chemical bonding and morphology has been investigated and correlated. It was observed that polarization lead to shifts in core level (CL) as well as valence band (VB) spectra. Angle dependent X-ray Photoelectron Spectroscopic analysis revealed higher surface oxide in polar GaN film compared to nonpolar GaN film. On varying the take off angle (TOA) from 0° to 60°, the Ga−O/Ga−N ratio varied from 0.11–0.23 for nonpolar and 0.17–0.36 for polar GaN film. The nonpolar film exhibited N-face polarity while Ga-face polarity was perceived in polar GaN film due to the inherent polarization effect. Polarization charge compensated surface states were observed on the polar GaN film and resulted in downward band bending. Ultraviolet photoelectron spectroscopic measurements revealed electron affinity and ionization energy of 3.4 ± 0.1 eV and 6.8 ± 0.1 eV for nonpolar GaN film and 3.8 ± 0.1 eV and 7.2 ± 0.1 eV for polar GaN film respectively. Field Emission Scanning Electron Microscopy measurements divulged smooth morphology with pits on polar GaN film. The nonpolar film on the other hand showed pyramidal structures having facets all over the surface.

  6. Ion irradiation of AZO thin films for flexible electronics

    Energy Technology Data Exchange (ETDEWEB)

    Boscarino, Stefano; Torrisi, Giacomo; Crupi, Isodiana [IMM-CNR and Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, 95123 Catania (Italy); Alberti, Alessandra [CNR-IMM, via Strada VIII 5, 95121 Catania (Italy); Mirabella, Salvatore; Ruffino, Francesco [IMM-CNR and Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, 95123 Catania (Italy); Terrasi, Antonio, E-mail: antonio.terrasi@ct.infn.it [IMM-CNR and Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, 95123 Catania (Italy)

    2017-02-01

    Highlights: • Evidence of electrical good quality AZO ultra thin films without thermal annealing. • Evidence of the main role of Oxygen vs. structural parameters in controlling the electrical performances of AZO. • Evidence of the role of the ion irradiation in improving the electrical properties of AZO ultra thin films. • Synthesis of AZO thin films on flexible/plastic substrates with good electrical properties without thermal processes. - Abstract: Aluminum doped Zinc oxide (AZO) is a promising transparent conductor for solar cells, displays and touch-screen technologies. The resistivity of AZO is typically improved by thermal annealing at temperatures not suitable for plastic substrates. Here we present a non-thermal route to improve the electrical and structural properties of AZO by irradiating the TCO films with O{sup +} or Ar{sup +} ion beams (30–350 keV, 3 × 10{sup 15}–3 × 10{sup 16} ions/cm{sup 2}) after the deposition on glass and flexible polyethylene naphthalate (PEN). X-ray diffraction, optical absorption, electrical measurements, Rutherford Backscattering Spectrometry and Atomic Force Microscopy evidenced an increase of the crystalline grain size and a complete relief of the lattice strain upon ion beam irradiation. Indeed, the resistivity of thin AZO films irradiated at room temperature decreased of two orders of magnitude, similarly to a thermal annealing at 400 °C. We also show that the improvement of the electrical properties does not simply depend on the strain or polycrystalline domain size, as often stated in the literature.

  7. Tuning the electronic properties at the surface of BaBiO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ferreyra, C. [GIyA y INN, CNEA, Av.Gral Paz 1499, (1650), San Martín, Buenos Aires (Argentina); Departamento de Física, Facultad Ciencias Exactas y Naturales, Universidad de Buenos Aires (Argentina); Guller, F.; Llois, A. M.; Vildosola, V. [GIyA y INN, CNEA, Av.Gral Paz 1499, (1650), San Martín, Buenos Aires (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); Marchini, F.; Williams, F. J. [Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); Departamento de Química Inorgánica, Analítica y Química-Física, INQUIMAE-CONICET, Facultad Ciencias Exactas y Naturales, Universidad de Buenos Aires, Pabellón 2, Ciudad Universitaria, Buenos Aires (Argentina); Lüders, U. [CRISMAT, CNRS UMR 6508, ENSICAEN, 6 Boulevard Maréchal Juin, 14050 Caen Cedex 4 (France); Albornoz, C. [GIyA y INN, CNEA, Av.Gral Paz 1499, (1650), San Martín, Buenos Aires (Argentina); Leyva, A. G. [GIyA y INN, CNEA, Av.Gral Paz 1499, (1650), San Martín, Buenos Aires (Argentina); Escuela de Ciencia y Tecnología, UNSAM, Campus Miguelete, (1650), San Martín, Buenos Aires (Argentina); and others

    2016-06-15

    The presence of 2D electron gases at surfaces or interfaces in oxide thin films remains a hot topic in condensed matter physics. In particular, BaBiO{sub 3} appears as a very interesting system as it was theoretically proposed that its (001) surface should become metallic if a Bi-termination is achieved (Vildosola et al., PRL 110, 206805 (2013)). Here we report on the preparation by pulsed laser deposition and characterization of BaBiO{sub 3} thin films on silicon. We show that the texture of the films can be tuned by controlling the growth conditions, being possible to stabilize strongly (100)-textured films. We find significant differences on the spectroscopic and transport properties between (100)-textured and non-textured films. We rationalize these experimental results by performing first principles calculations, which indicate the existence of electron doping at the (100) surface. This stabilizes Bi ions in a 3+ state, shortens Bi-O bonds and reduces the electronic band gap, increasing the surface conductivity. Our results emphasize the importance of surface effects on the electronic properties of perovskites, and provide strategies to design novel oxide heterostructures with potential interface-related 2D electron gases.

  8. Effect of electronic contribution on temperature-dependent thermal transport of antimony telluride thin film

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Won-Yong; Park, No-Won [Department of Physics, Chung-Ang University, Seoul 156-756 (Korea, Republic of); Hong, Ji-Eun [Department of Materials Engineering, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Yoon, Soon-Gil, E-mail: sgyoon@cnu.ac.kr [Department of Materials Engineering, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Koh, Jung-Hyuk [School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756 (Korea, Republic of); Lee, Sang-Kwon, E-mail: sangkwonlee@cau.ac.kr [Department of Physics, Chung-Ang University, Seoul 156-756 (Korea, Republic of)

    2015-01-25

    Highlights: • We investigated thermal transport of the antimony telluride thin films. • The contribution of the electronic thermal conductivity increased up to ∼77% at 300 K. • We theoretically analyze and explain the high contribution of electronic component. - Abstract: We study the theoretical and experimental characteristics of thermal transport of 100 nm and 500 nm-thick antimony telluride (Sb{sub 2}Te{sub 3}) thin films prepared by radio frequency magnetron sputtering. The thermal conductivity was measured at temperatures ranging from 20 to 300 K, using four-point-probe 3-ω method. Out-of-plane thermal conductivity of the Sb{sub 2}Te{sub 3} thin film was much lesser in comparison to the bulk material in the entire temperature range, confirming that the phonon- and electron-boundary scattering are enhanced in thin films. Moreover, we found that the contribution of the electronic thermal conductivity (κ{sub e}) in total thermal conductivity (κ) linearly increased up to ∼77% at 300 K with increasing temperature. We theoretically analyze and explain the high contribution of electronic component of thermal conductivity towards the total thermal conductivity of the film by a modified Callaway model. Further, we find the theoretical model predictions to correspond well with the experimental results.

  9. Properties of IGZO thin films irradiated by electron beams with various energies

    International Nuclear Information System (INIS)

    Jeong, So Hyun; Bae, Byung Seong; Yu, Kyeong Min; Yun, Eui Jung; Ryu, Min Ki; Cho, Kyoung Ik

    2012-01-01

    In this study, we investigated the effects of the key parameters of high-energy electron-beam irradiation (HEEBI) on the optical, electrical, and structural properties of indium-gallium-zinc oxide (IGZO) films grown on glass substrates at room temperature by using radio-frequency magnetron sputtering techniques. Hall, photoluminescence, X-ray photoelectron spectroscopy (XPS), and secondary ion mass spectroscopy measurements revealed that p-type conductivity might appear in films HEEBI-treated at high energy and dose, which was attributed to not only the formation of oxygen interstitial and zinc vacancy acceptor defects but also the reduction of hydrogen-related donor defects in the IGZO films due to HEEBI treatment. X-ray diffraction analyses showed an increase in the halo peak intensity at around 34 .deg. with increasing electron-beam energy, indicating that all films prepared in this study were more crystallized at a higher energy despite their amorphous main structure.

  10. Fabrication of Si3N4 thin films on phynox alloy substrates for electronic applications

    Science.gov (United States)

    Shankernath, V.; Naidu, K. Lakshun; Krishna, M. Ghanashyam; Padmanabhan, K. A.

    2018-04-01

    Thin films of Si3N4 are deposited on Phynox alloy substrates using radio frequency magnetron sputtering. The thickness of the films was varied between 80-150 nm by increasing the duration of deposition from 1 to 3 h at a fixed power density and working pressure. X-ray diffraction patterns reveal that the Si3N4 films had crystallized inspite of the substrates not being heated during deposition. This was confirmed using selected area electron diffraction and high resolution transmission electron microscopy also. It is postulated that a low lattice misfit between Si3N4 and Phynox provides energetically favourable conditions for ambient temperature crystallization. The hardness of the films is of the order of 6 to 9 GPa.

  11. Learn about gluten-free diets

    Science.gov (United States)

    ... gluten-free, including: Fruits and vegetables Meat, fish, poultry, and eggs Beans Nuts and seeds Dairy products ... including frozen foods, soups, and rice mixes Salad dressings, sauces, marinades, and gravies Some candies, licorice Some ...

  12. RHEOLOGICAL CHARACTERISTICS OF GLUTEN-FREE DOUGH

    Directory of Open Access Journals (Sweden)

    Iva Burešová

    2014-02-01

    Full Text Available Dynamic oscillation rheometry was used to determine the viscoelastic properties of gluten-free dough prepared from amaranth, chickpea, millet, corn, quinoa, buckwheat and rice flours. The viscoelastic properties was described by storage modulus G´, loss modulus G´´ and phase angle tg(δ. The relationship between viscoelastic properties of gluten-free dough and bread-making quality was evaluated. The results of this study indicated that dynamic oscillation rheometry may be used to differentiate the bread-making quality of gluten-free flour. Bread-making quality of gluten-free flour is the best characterised by curve slope of storage modulus G´and phase angle tg(δ while bread made from the flour with storage modulus and phase angle with non-linear slope in low deformation frequencies 0.01–0.10 Hz achieved the largest volume.

  13. Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

    Energy Technology Data Exchange (ETDEWEB)

    Tripathy, Sumanta K.; Rajeswari, V. P. [Centre for Nano Science and Technology, GVP College of Engineering (Autonomous), Visakhapatnam- 530048 (India)

    2014-01-28

    Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn{sub 3}O{sub 4}, corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells.

  14. Implanted ZnO thin films: Microstructure, electrical and electronic properties

    International Nuclear Information System (INIS)

    Lee, J.; Metson, J.; Evans, P.J.; Kinsey, R.; Bhattacharyya, D.

    2007-01-01

    Magnetron sputtered polycrystalline ZnO thin films were implanted using Al, Ag, Sn, Sb and codoped with TiN in order to improve the conductivity and to attempt to achieve p-type behaviour. Structural and electrical properties of the implanted ZnO thin films were examined with X-ray diffractometry (XRD), scanning electron microscopy (SEM), secondary ion mass spectrometry (SIMS), atomic force microscopy (AFM) and conductivity measurements. Depth profiles of the implanted elements varied with the implant species. Implantation causes a partial amorphisation of the crystalline structure and decreases the effective grain size of the films. One of the findings is the improvement, as a consequence of implantation, in the conductivity of initially poorly conductive samples. Heavy doping may help for the conversion of conduction type of ZnO thin films. Annealing in vacuum mitigated structural damage and stress caused by implantation, and improved the conductivity of the implanted ZnO thin films

  15. Laser assisted modification and chemical metallization of electron-beam deposited ceria thin films

    International Nuclear Information System (INIS)

    Krumov, E.; Starbov, N.; Starbova, K.; Perea, A.; Solis, J.

    2009-01-01

    Excimer laser processing is applied for tailoring the surface morphology and phase composition of CeO 2 ceramic thin films. E-beam evaporation technique is used to deposit samples on stainless steel and silicate glass substrates. The films are then irradiated with ArF* excimer laser pulses under different exposure conditions. Scanning electron microscopy, optical spectrophotometry, X-ray diffractometry and EDS microanalysis are used to characterize the non-irradiated and laser-processed films. Upon UV laser exposure there is large increase of the surface roughness that is accompanied by photo-darkening and ceria reduction. It is shown that the laser induced changes in the CeO 2 films facilitate the deposition of metal nano-aggregates in a commercial copper electroless plating bath. The significance of laser modification as a novel approach for the production of CeO 2 based thin film catalysts is discussed.

  16. Laser assisted modification and chemical metallization of electron-beam deposited ceria thin films

    Energy Technology Data Exchange (ETDEWEB)

    Krumov, E., E-mail: emodk@clf.bas.bg [Central Laboratory of Photoprocesses ' Acad. Jordan Malinowski' , Bulgarian Academy of Sciences, Acad. Georgy Bonchev Str., bl. 109, 1113 Sofia (Bulgaria); Starbov, N.; Starbova, K. [Central Laboratory of Photoprocesses ' Acad. Jordan Malinowski' , Bulgarian Academy of Sciences, Acad. Georgy Bonchev Str., bl. 109, 1113 Sofia (Bulgaria); Perea, A.; Solis, J. [Instituto de Optica ' Daza de Valdes' , CSIC, 28006 Madrid (Spain)

    2009-11-15

    Excimer laser processing is applied for tailoring the surface morphology and phase composition of CeO{sub 2} ceramic thin films. E-beam evaporation technique is used to deposit samples on stainless steel and silicate glass substrates. The films are then irradiated with ArF* excimer laser pulses under different exposure conditions. Scanning electron microscopy, optical spectrophotometry, X-ray diffractometry and EDS microanalysis are used to characterize the non-irradiated and laser-processed films. Upon UV laser exposure there is large increase of the surface roughness that is accompanied by photo-darkening and ceria reduction. It is shown that the laser induced changes in the CeO{sub 2} films facilitate the deposition of metal nano-aggregates in a commercial copper electroless plating bath. The significance of laser modification as a novel approach for the production of CeO{sub 2} based thin film catalysts is discussed.

  17. Novel lift-off technique for Transmission Electron Microscopy imaging of block copolymer films

    International Nuclear Information System (INIS)

    Roache, Fergus J.M.; Radjainia, Mazdak; Williams, David E.; Gerrard, Juliet A.; Travas-Sejdic, Jadranka; Malmström, Jenny

    2015-01-01

    We have developed a simple technique to allow for the lift-off and subsequent transfer of poly(styrene-block-ethylene glycol) films to Transmission Electron Microscopy (TEM) grids. The block copolymer is spin coated onto carbon coated mica and annealed. After the thin film is produced it can easily be floated onto water and picked up by a TEM grid. This method offers better control over film processing than dip coating the TEM grid and is also a significant improvement over methods using etchants such as hydrofluoric acid. - Highlights: • We have developed a simple method to lift block copolymer films to TEM grids. • Polymer films prepared on carbon coated mica are easily floated on water. • The new method circumvents the use of harsh chemicals

  18. Flexible barrier film, method of forming same, and organic electronic device including same

    Science.gov (United States)

    Blizzard, John; Tonge, James Steven; Weidner, William Kenneth

    2013-03-26

    A flexible barrier film has a thickness of from greater than zero to less than 5,000 nanometers and a water vapor transmission rate of no more than 1.times.10.sup.-2 g/m.sup.2/day at 22.degree. C. and 47% relative humidity. The flexible barrier film is formed from a composition, which comprises a multi-functional acrylate. The composition further comprises the reaction product of an alkoxy-functional organometallic compound and an alkoxy-functional organosilicon compound. A method of forming the flexible barrier film includes the steps of disposing the composition on a substrate and curing the composition to form the flexible barrier film. The flexible barrier film may be utilized in organic electronic devices.

  19. Structural and electronic characterization of 355 nm laser-crystallized silicon: Interplay of film thickness and laser fluence

    International Nuclear Information System (INIS)

    Semler, Matthew R.; Swenson, Orven F.; Hoey, Justin M.; Guruvenket, Srinivasan; Gette, Cody R.; Hobbie, Erik K.

    2014-01-01

    We present a detailed study of the laser crystallization of amorphous silicon thin films as a function of laser fluence and film thickness. Silicon films grown through plasma-enhanced chemical vapor deposition were subjected to a Q-switched, diode-pumped solid-state laser operating at 355 nm. The crystallinity, morphology, and optical and electronic properties of the films are characterized through transmission and reflectance spectroscopy, resistivity measurements, Raman spectroscopy, X-ray diffraction, atomic force microscopy, and optical and scanning-electron microscopy. Our results reveal a unique surface morphology that strongly couples to the electronic characteristics of the films, with a minimum laser fluence at which the film properties are optimized. A simple scaling model is used to relate film morphology to conductivity in the laser-processed films

  20. Dissolvable Films of Silk Fibroin for Ultrathin Conformal Bio-Integrated Electronics

    Science.gov (United States)

    2010-06-01

    implantation. *A full list of authors and their affiliations appears at the end of the paper. Silk is an appealing biopolymer as a temporary, soluble...18 APR 2010 2. REPORT TYPE 3. DATES COVERED 00-00-2010 to 00-00-2010 4. TITLE AND SUBTITLE Dissolvable films of silk fibroin for ultrathin...10.1038/NMAT2745 Dissolvable films of silk fibroin for ultrathin conformal bio-integrated electronics Dae-Hyeong Kim and Jonathan Viventi et al

  1. Dose response of thin-film dosimeters irradiated with 80-120 keV electrons

    DEFF Research Database (Denmark)

    Helt-Hansen, J.; Miller, A.; Sharpe, P.

    2005-01-01

    Thin-film dosimeters (Riso B3 and alanine films) were irradiated at 10 MeV and 80-120 keV electron accelerators, and it has been shown that the radiation response of the dosimeter materials (the radiation chemical yields) are constant at these irradiation energies. However, dose gradients within ...... are present within the dosimeter. (C) 2005 Elsevier Ltd. All rights reserved....

  2. The rise and fall of gluten!

    Science.gov (United States)

    Aziz, Imran; Branchi, Federica; Sanders, David S

    2015-08-01

    Mankind has existed for 2·5 million years but only in the last 10,000 years have we been exposed to wheat. Wheat was first cultivated in the Fertile Crescent (South Western Asia) with a farming expansion that lasted from about 9000BC to 4000BC. Thus it could be considered that wheat (and gluten) is a novel introduction to man's diet! Prior to 1939 the rationing system had already been devised. This led to an imperative to try to increase agricultural production. Thus it was agreed in 1941 that there was a need to establish a Nutrition Society. The very roots of the society were geared towards necessarily increasing the production of wheat. This goal was achieved and by the end of the 20th century, global wheat output had expanded 5-fold. Perhaps as a result the epidemiology of coeliac disease (CD) or gluten sensitive enteropathy has changed. CD is a state of heightened immunological responsiveness to ingested gluten in genetically susceptible individuals. CD now affects 1 % or more of all adults, for which the treatment is a strict lifelong gluten-free diet. However, there is a growing body of evidence to show that a far greater proportion of individuals without coeliac disease are taking a gluten-free diet of their own volition. This clinical entity has been termed non-coeliac gluten sensitivity (NCGS), although the condition is fraught with complexities due to overlap with other gluten-based constituents that can also trigger similar clinical symptoms. This review will explore the relationship between gluten, the rising prevalence of modern coeliac disease, and the new entity of NCGS along with its associated uncertainties.

  3. Rheological Properties of Gluten Free Dough Systems

    OpenAIRE

    Tandazo, Stephany Aurea

    2013-01-01

    Bread is the one of the oldest processed foods and a major wheat based product. The basic process involves mixing of ingredients until the flour is converted into dough, followed by baking the dough into a loaf. A very important step in breadmaking is to know how to make good quality dough. However, the increasing knowledge of people being diagnosed with celiac disease (gluten intolerance) has encouraged scientists to develop healthier and better quality gluten-free products that would greatl...

  4. Evaluating Origin of Electron Traps in Tris(8-hydroxyquinoline) Aluminum Thin Films using Thermally Stimulated Current Technique

    OpenAIRE

    Matsushima, Toshinori; Adachi, Chihaya

    2008-01-01

    We measured the energy distributions and concentrations of electron traps in O_2-unexposed and O_2-exposed tris(8-hydroxyquinoline) aluminum (Alq_3) films using a thermally stimulated current (TSC) technique to investigate how doping O_2 molecules in Alq_3 films affect the films' electron trap and electron transport characteristics. The results of our TSC studies revealed that Alq_3 films have an electron trap distribution with peak depths ranging from 0.075 to 0.1 eV and peak widths ranging ...

  5. Electron pulsed beam induced processing of thin film surface by Nb3Ge deposited into a stainless steel tape

    International Nuclear Information System (INIS)

    Vavra, I.; Korenev, S.A.

    1988-01-01

    A surface of superconductive thin film of Nb 3 Ge deposited onto a stainless steel tape was processed using the electron beam technique. The electron beam used had the following parameters: beam current density from 400 to 1000 A/cm 2 ; beam energy 100 keV; beam impulse length 300 ns. By theoretical analysis it is shown that the heating of film surface is an adiabatic process. It corresponds to our experimental data and pictures showing a surface remelting due to electron beam influence. After beam processing the superconductive parameters of the film remain unchanged. Roentgenograms have been analysed of Nb 3 Ge film surface recrystallized due to electron beam influence

  6. Electron transport determines the electrochemical properties of tetrahedral amorphous carbon (ta-C) thin films

    International Nuclear Information System (INIS)

    Palomäki, Tommi; Wester, Niklas; Caro, Miguel A.; Sainio, Sami; Protopopova, Vera; Koskinen, Jari; Laurila, Tomi

    2017-01-01

    Amorphous carbon based electrodes are very promising for electrochemical sensing applications. In order to better understand their structure-function relationship, the effect of film thickness on the electrochemical properties of tetrahedral amorphous carbon (ta-C) electrodes was investigated. ta-C thin films of 7, 15, 30, 50 and 100 nm were characterized in detail with Raman spectroscopy, transmission electron microscopy (TEM), conductive atomic force microscopy (c-AFM), scanning tunneling spectroscopy (STS) and X-ray absorption spectroscopy (XAS) to assess (i) the surface properties of the films, (ii) the effect of film thickness on their structure and electrical properties and (iii) the subsequent correlation with their electrochemistry. The electrochemical properties were investigated by cyclic voltammetry (CV) using two different outer-sphere redox probes, Ru(NH 3 ) 6 3+/2+ and FcMeOH, and by electrochemical impedance spectroscopy (EIS). Computational simulations using density functional theory (DFT) were carried out to rationalize the experimental findings. The characterization results showed that the sp 2 /sp 3 ratio increased with decreasing ta-C film thickness. This correlated with a decrease in mobility gap value and an increase in the average current through the films, which was also consistent with the computational results. XAS indicated that the surface of the ta-C films was always identical and composed of a sp 2 -rich layer. The CV measurements indicated reversible reaction kinetics for both outer-sphere redox probes at 7 and 15 nm ta-C films with a change to quasi-reversible behavior at a thickness of around 30 nm. The charge transfer resistance, obtained from EIS measurements, decreased with decreasing film thickness in accordance with the CV results. Based on the characterization and electrochemical results, we conclude that the reaction kinetics in the case of outer-sphere redox systems is determined mainly by the electron transport through the

  7. Electronic and geometric structure of electro-optically active organic films and associated interfaces

    International Nuclear Information System (INIS)

    Ivanco, J.; Haber, T.; Resel, R.; Netzer, F.P.; Ramsey, M.G.

    2006-01-01

    The electronic and structural properties of sexiphenyl and sexithiophene films grown under ultra-high vacuum conditions on a variety of well-controlled substrate surfaces have been examined. We show that, in contradiction with the general notion, the ionisation potential of the organic films is not a material constant. Considering the variable ionisation potential, the validity of the Schottky-Mott relationship, which expresses a dependence of the band alignment on the substrate work function, is analysed. We also briefly discuss the relevance of the built-in potential behaviour in organic films for the band-bending concept

  8. Gluten-Free Diet Indications, Safety, Quality, Labels, and Challenges.

    Science.gov (United States)

    Rostami, Kamran; Bold, Justine; Parr, Alison; Johnson, Matt W

    2017-08-08

    A gluten-free diet (GFD) is the safest treatment modality in patient with coeliac disease (CD) and other gluten-related disorders. Contamination and diet compliance are important factors behind persistent symptoms in patients with gluten related-disorders, in particular CD. How much gluten can be tolerated, how safe are the current gluten-free (GF) products, what are the benefits and side effects of GFD? Recent studies published in Nutrients on gluten-free products' quality, availability, safety, as well as challenges related to a GFD are discussed.

  9. Electronic structures and relevant physical properties of Ni2MnGa alloy films

    International Nuclear Information System (INIS)

    Kim, K. W.; Kim, J. B.; Huang, M. D.; Lee, N. N.; Lee, Y. P.; Kudryavtsev, Y. V.; Rhee, J. Y.

    2004-01-01

    The electronic structures and physical properties of the ordered and disordered Ni 2 MnGa alloy films were investigated in this study. Ordered and disordered Ni 2 MnGa alloy films were prepared by flash evaporation onto substrates maintained at 720 K and 150 K, respectively. The results show that the ordered films behave in nearly the same way as the bulk Ni 2 MnGa ferromagnetic shape-memory alloy, including the martensitic transformation at 200 K. It was also revealed that the film deposition onto substrates cooled by liquid nitrogen leads to the formation of a substantially-disordered or an amorphous phase which is not ferromagnetically ordered at room temperature. An annealing of such an amorphous film restores its crystallinity and also recovers the ferromagnetic order. It was also clarified how the structural disordering in the films influences the physical properties, including the loss of ferromagnetism in the disordered films, by performing electronic-structure calculations and a photoemission study.

  10. Epitaxial Lift-Off of Centimeter-Scaled Spinel Ferrite Oxide Thin Films for Flexible Electronics.

    Science.gov (United States)

    Shen, Lvkang; Wu, Liang; Sheng, Quan; Ma, Chunrui; Zhang, Yong; Lu, Lu; Ma, Ji; Ma, Jing; Bian, Jihong; Yang, Yaodong; Chen, Aiping; Lu, Xiaoli; Liu, Ming; Wang, Hong; Jia, Chun-Lin

    2017-09-01

    Mechanical flexibility of electronic devices has attracted much attention from research due to the great demand in practical applications and rich commercial value. Integration of functional oxide materials in flexible polymer materials has proven an effective way to achieve flexibility of functional electronic devices. However, the chemical and mechanical incompatibilities at the interfaces of dissimilar materials make it still a big challenge to synthesize high-quality single-crystalline oxide thin film directly on flexible polymer substrates. This study reports an improved method that is employed to successfully transfer a centimeter-scaled single-crystalline LiFe 5 O 8 thin film on polyimide substrate. Structural characterizations show that the transferred films have essentially no difference in comparison with the as-grown films with respect to the microstructure. In particular, the transferred LiFe 5 O 8 films exhibit excellent magnetic properties under various mechanical bending statuses and show excellent fatigue properties during the bending cycle tests. These results demonstrate that the improved transfer method provides an effective way to compose single-crystalline functional oxide thin films onto flexible substrates for applications in flexible and wearable electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. [Irritable bowel syndrome, celiac disease and gluten].

    Science.gov (United States)

    Mearin, Fermín; Montoro, Miguel

    2014-08-04

    For many years irritable bowel syndrome (IBS) and celiac disease (CD) have been considered 2 completely separate entities, with CD being clearly related to a permanent gluten intolerance and IBS having no relation with gluten ingestion. However IBS and CD symptoms may be indistinguishable, especially when diarrhea, bloating or abdominal pain predominate. In the last decade several studies have shown that the separation between CD and IBS is not so clear. Thus, some patients who have been diagnosed of IBS suffer in fact from CD. In addition, it seems that there is a group of patients who, without having CD, suffer gluten intolerance that cause them digestive symptoms similar to those of IBS. Gluten sensitivity is defined as the spectrum of morphological, immunological and functional abnormalities that respond to a gluten-free diet. This concept includes histological, immunological and clinical manifestations in the absence of evident morphological abnormalities. Therefore, it is mandatory to establish in a scientific way in which patients a gluten-free diet will be beneficial as well as when this is not justified. Copyright © 2013 Elsevier España, S.L. All rights reserved.

  12. Thin Film Technology of High-Critical-Temperature Superconducting Electronics.

    Science.gov (United States)

    1985-12-11

    ANALISIS OF THIN-FILM SUPERCONDUCTORS J. Talvacchio, M. A. Janocko, J. R. Gavaler, and A...in the areas of substrate preparation, niobum nitride, nlobium-tin, and molybdenum-rhenium. AN INTEGRATED DEPOSITION AND ANALISI - FACILITT The four...mobility low (64). The voids are separating 1-3 nm clusters of dense deposit. At low deposition temperatures this microstructure will persist near

  13. Chemical formation of palladium-free surface-nickelized polyimide film for flexible electronics

    International Nuclear Information System (INIS)

    Hsiao, Y.-S.; Whang, W.-T.; Wu, S.-C.; Chuang, Kuen-Ru

    2008-01-01

    Flexible polyimide (PI) films for flexible electronics were surface-nickelized using a fully solution-based process and excellent adhesion between the nickel and polyimide phases was observed. Polyimide substrates were modified by alkaline hydrolysis, ion exchange, reduction and nickel electroless deposition without palladium. Atomic force microscopy and field emission scanning electron microscopy were used to follow the growth of nickel nanoparticles (Ni-NPs) and nickel layers on the polyimide surface. The surface resistances of the Ni-NPs/PI films and Ni/PI films, measured using a four-point probe, were 1.6 x 10 7 and 0.83 Ω/cm 2 , respectively. The thicknesses of Ni-NPs and the Ni layer on the polyimide surface were 82 nm and 382 nm, respectively, as determined by transmission electron microscopy, and the Ni layer adhered well to PI, as determined by the adhesive tape testing method

  14. Ultrafast electron diffraction studies of optically excited thin bismuth films

    International Nuclear Information System (INIS)

    Rajkovic, Ivan

    2008-01-01

    This thesis contains work on the design and the realization of an experimental setup capable of providing sub-picosecond electron pulses for ultrafast electron diffraction experiments, and performing the study of ultrafast dynamics in bismuth after optical excitation using this setup. (orig.)

  15. Ultrafast electron diffraction studies of optically excited thin bismuth films

    Energy Technology Data Exchange (ETDEWEB)

    Rajkovic, Ivan

    2008-10-21

    This thesis contains work on the design and the realization of an experimental setup capable of providing sub-picosecond electron pulses for ultrafast electron diffraction experiments, and performing the study of ultrafast dynamics in bismuth after optical excitation using this setup. (orig.)

  16. Spherical aberration correction in a scanning transmission electron microscope using a sculpted thin film.

    Science.gov (United States)

    Shiloh, Roy; Remez, Roei; Lu, Peng-Han; Jin, Lei; Lereah, Yossi; Tavabi, Amir H; Dunin-Borkowski, Rafal E; Arie, Ady

    2018-06-01

    Nearly eighty years ago, Scherzer showed that rotationally symmetric, charge-free, static electron lenses are limited by an unavoidable, positive spherical aberration. Following a long struggle, a major breakthrough in the spatial resolution of electron microscopes was reached two decades ago by abandoning the first of these conditions, with the successful development of multipole aberration correctors. Here, we use a refractive silicon nitride thin film to tackle the second of Scherzer's constraints and demonstrate an alternative method for correcting spherical aberration in a scanning transmission electron microscope. We reveal features in Si and Cu samples that cannot be resolved in an uncorrected microscope. Our thin film corrector can be implemented as an immediate low cost upgrade to existing electron microscopes without re-engineering of the electron column or complicated operation protocols and can be extended to the correction of additional aberrations. Copyright © 2018 The Authors. Published by Elsevier B.V. All rights reserved.

  17. Frequency characteristics of the MIM thick film capacitors fabricated by laser micro-cladding electronic pastes

    International Nuclear Information System (INIS)

    Cao Yu; Li Xiangyou; Zeng Xiaoyan

    2008-01-01

    With rapid development of the electronic industry, how to respond the market requests quickly, shorten R and D prototyping fabrication period, and reduce the cost of the electronic devices have become a challenge work, which need flexible manufacturing methods. In this work, two direct write processing methods, direct material deposition by microPen and Nd:YAG laser micro-cladding, are integrated with CAD/CAM technology for the hybrid fabrication of passive electronic components. Especially, the metal-insulator-metal (MIM) type thick film capacitors are fabricated on ceramic substrates by this method. A basic two-step procedure of laser micro-cladding electronic pastes (LMCEPs) process for the thick film pattern preparation is presented. For a better understanding of the MIM thick film capacitor characterization, equivalent circuit models at low-frequency and high-frequency domains are introduced, respectively. The frequency characteristics tests up to 1.8 GHz of capacitance stability, equivalent series resistance (ESR), equivalent series inductance (ESL) and impendence are performed, and the results show good DC voltage stability (<2.48%), good frequency stability (<2.6%) and low dissipation factor (<0.6%) of the MIM thick film capacitors, which may get application to megahertz regions. The further developments of the LMCEP process for fabricating MIM thick film capacitors are also investigated

  18. Frequency characteristics of the MIM thick film capacitors fabricated by laser micro-cladding electronic pastes

    Energy Technology Data Exchange (ETDEWEB)

    Cao Yu; Li Xiangyou [Wuhan National Laboratory for Optoelectronics, Huazhong University of Sci and Tech, 430074 Wuhan, Hubei (China); Zeng Xiaoyan [Wuhan National Laboratory for Optoelectronics, Huazhong University of Sci and Tech, 430074 Wuhan, Hubei (China)], E-mail: xyzeng@mail.hust.edu.cn

    2008-05-25

    With rapid development of the electronic industry, how to respond the market requests quickly, shorten R and D prototyping fabrication period, and reduce the cost of the electronic devices have become a challenge work, which need flexible manufacturing methods. In this work, two direct write processing methods, direct material deposition by microPen and Nd:YAG laser micro-cladding, are integrated with CAD/CAM technology for the hybrid fabrication of passive electronic components. Especially, the metal-insulator-metal (MIM) type thick film capacitors are fabricated on ceramic substrates by this method. A basic two-step procedure of laser micro-cladding electronic pastes (LMCEPs) process for the thick film pattern preparation is presented. For a better understanding of the MIM thick film capacitor characterization, equivalent circuit models at low-frequency and high-frequency domains are introduced, respectively. The frequency characteristics tests up to 1.8 GHz of capacitance stability, equivalent series resistance (ESR), equivalent series inductance (ESL) and impendence are performed, and the results show good DC voltage stability (<2.48%), good frequency stability (<2.6%) and low dissipation factor (<0.6%) of the MIM thick film capacitors, which may get application to megahertz regions. The further developments of the LMCEP process for fabricating MIM thick film capacitors are also investigated.

  19. Effect of oxygen deficiency on electronic properties and local structure of amorphous tantalum oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Denny, Yus Rama [Department of Physics Education, University of Sultan Ageng Tirtayasa, Banten 42435 (Indonesia); Firmansyah, Teguh [Department of Electrical Engineering, University of Sultan Ageng Tirtayasa, Banten 42435 (Indonesia); Oh, Suhk Kun [Department of Physics, Chungbuk National University, Cheongju 28644 (Korea, Republic of); Kang, Hee Jae, E-mail: hjkang@cbu.ac.kr [Department of Physics, Chungbuk National University, Cheongju 28644 (Korea, Republic of); Yang, Dong-Seok [Department of Physics Education, Chungbuk National University, Cheongju 28644 (Korea, Republic of); Heo, Sung; Chung, JaeGwan; Lee, Jae Cheol [Analytical Engineering Center, Samsung Advanced Institute of Technology, Suwon 16678 (Korea, Republic of)

    2016-10-15

    Highlights: • The effect of oxygen flow rate on electronic properties and local structure of tantalum oxide thin films was studied. • The oxygen deficiency induced the nonstoichiometric state a-TaOx. • A small peak at 1.97 eV above the valence band side appeared on nonstoichiometric Ta{sub 2}O{sub 5} thin films. • The oxygen flow rate can change the local electronic structure of tantalum oxide thin films. - Abstract: The dependence of electronic properties and local structure of tantalum oxide thin film on oxygen deficiency have been investigated by means of X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and X-ray absorption spectroscopy (XAS). The XPS results showed that the oxygen flow rate change results in the appearance of features in the Ta 4f at the binding energies of 23.2 eV, 24.4 eV, 25.8, and 27.3 eV whose peaks are attributed to Ta{sup 1+}, Ta{sup 2+}, Ta{sup 3+}/Ta{sup 4+}, and Ta{sup 5+}, respectively. The presence of nonstoichiometric state from tantalum oxide (TaOx) thin films could be generated by the oxygen vacancies. In addition, XAS spectra manifested both the increase of coordination number of the first Ta-O shell and a considerable reduction of the Ta-O bond distance with the decrease of oxygen deficiency.

  20. Quality of shear fractionated wheat gluten – comparison to commercial vital wheat gluten

    NARCIS (Netherlands)

    Zalm, van der E.E.J.; Goot, van der A.J.; Boom, R.M.

    2011-01-01

    The functional properties of gluten obtained with a shear-induced separation process, recently proposed by Peighambardoust et al. (2008), are compared with a commercially available vital wheat gluten. Two tests were performed. First, a relatively strong wheat flour, Soissons, was enriched with

  1. Optical Analysis of Iron-Doped Lead Sulfide Thin Films for Opto-Electronic Applications

    Science.gov (United States)

    Chidambara Kumar, K. N.; Khadeer Pasha, S. K.; Deshmukh, Kalim; Chidambaram, K.; Shakil Muhammad, G.

    Iron-doped lead sulfide thin films were deposited on glass substrates using successive ionic layer adsorption and reaction method (SILAR) at room temperature. The X-ray diffraction pattern of the film shows a well formed crystalline thin film with face-centered cubic structure along the preferential orientation (1 1 1). The lattice constant is determined using Nelson Riley plots. Using X-ray broadening, the crystallite size is determined by Scherrer formula. Morphology of the thin film was studied using a scanning electron microscope. The optical properties of the film were investigated using a UV-vis spectrophotometer. We observed an increase in the optical band gap from 2.45 to 3.03eV after doping iron in the lead sulfide thin film. The cutoff wavelength lies in the visible region, and hence the grown thin films can be used for optoelectronic and sensor applications. The results from the photoluminescence study show the emission at 500-720nm. The vibrating sample magnetometer measurements confirmed that the lead sulfide thin film becomes weakly ferromagnetic material after doping with iron.

  2. Composite depth dose measurement for total skin electron (TSE) treatments using radiochromic film

    International Nuclear Information System (INIS)

    Gamble, Lisa M; Farrell, Thomas J; Jones, Glenn W; Hayward, Joseph E

    2003-01-01

    Total skin electron (TSE) radiotherapy is routinely used to treat cutaneous T-cell lymphomas and can be implemented using a modified Stanford technique. In our centre, the composite depth dose for this technique is achieved by a combination of two patient positions per day over a three-day cycle, and two gantry angles per patient position. Due to patient morphology, underdosed regions typically occur and have historically been measured using multiple thermoluminescent dosimeters (TLDs). We show that radiochromic film can be used as a two-dimensional relative dosimeter to measure the percent depth dose in TSE radiotherapy. Composite depth dose curves were measured in a cylindrical, polystyrene phantom and compared with TLD data. Both multiple films (1 film per day) and a single film were used in order to reproduce a realistic clinical scenario. First, three individual films were used to measure the depth dose, one per treatment day, and then compared with TLD data; this comparison showed a reasonable agreement. Secondly, a single film was used to measure the dose delivered over three daily treatments and then compared with TLD data; this comparison showed good agreement throughout the depth dose, which includes doses well below 1 Gy. It will be shown that one piece of radiochromic film is sufficient to measure the composite percent depth dose for a TSE beam, hence making radiochromic film a suitable candidate for monitoring underdosed patient regions

  3. Electron beam physical vapor deposition of thin ruby films for remote temperature sensing

    International Nuclear Information System (INIS)

    Li Wei; Coppens, Zachary J.; Greg Walker, D.; Valentine, Jason G.

    2013-01-01

    Thermographic phosphors (TGPs) possessing temperature-dependent photoluminescence properties have a wide range of uses in thermometry due to their remote access and large temperature sensitivity range. However, in most cases, phosphors are synthesized in powder form, which prevents their use in high resolution micro and nanoscale thermal microscopy. In the present study, we investigate the use of electron beam physical vapor deposition to fabricate thin films of chromium-doped aluminum oxide (Cr-Al 2 O 3 , ruby) thermographic phosphors. Although as-deposited films were amorphous and exhibited weak photoluminescence, the films regained the stoichiometry and α-Al 2 O 3 crystal structure of the combustion synthesized source powder after thermal annealing. As a consequence, the annealed films exhibit both strong photoluminescence and a temperature-dependent lifetime that decreases from 2.9 ms at 298 K to 2.1 ms at 370 K. Ruby films were also deposited on multiple substrates. To ensure a continuous film with smooth surface morphology and strong photoluminescence, we use a sapphire substrate, which is thermal expansion coefficient and lattice matched to the film. These thin ruby films can potentially be used as remote temperature sensors for probing the local temperatures of micro and nanoscale structures.

  4. The study of composition changes in thin film coatings of Ge-As-Se type under relativistic electron irradiation by means of electron Auger spectroscopy

    International Nuclear Information System (INIS)

    Kesler, L.G.; Dovgoshej, N.I.; Savchenko, N.D.

    1991-01-01

    Data on the influence of relativistic electrons on depth profile of Ge 33 As 12 Se 55 films were obtained for the first time. It was established that the most sufficient change of element composition of films in result of electron irradiation took place in the surface layer and on film-sublayer interface. It can be explained by increase of diffusion of impurities and free atoms

  5. A non-human primate model for gluten sensitivity.

    Directory of Open Access Journals (Sweden)

    Michael T Bethune

    2008-02-01

    Full Text Available Gluten sensitivity is widespread among humans. For example, in celiac disease patients, an inflammatory response to dietary gluten leads to enteropathy, malabsorption, circulating antibodies against gluten and transglutaminase 2, and clinical symptoms such as diarrhea. There is a growing need in fundamental and translational research for animal models that exhibit aspects of human gluten sensitivity.Using ELISA-based antibody assays, we screened a population of captive rhesus macaques with chronic diarrhea of non-infectious origin to estimate the incidence of gluten sensitivity. A selected animal with elevated anti-gliadin antibodies and a matched control were extensively studied through alternating periods of gluten-free diet and gluten challenge. Blinded clinical and histological evaluations were conducted to seek evidence for gluten sensitivity.When fed with a gluten-containing diet, gluten-sensitive macaques showed signs and symptoms of celiac disease including chronic diarrhea, malabsorptive steatorrhea, intestinal lesions and anti-gliadin antibodies. A gluten-free diet reversed these clinical, histological and serological features, while reintroduction of dietary gluten caused rapid relapse.Gluten-sensitive rhesus macaques may be an attractive resource for investigating both the pathogenesis and the treatment of celiac disease.

  6. Gluten-related disorders: certainties, questions and doubts.

    Science.gov (United States)

    Valenti, Simona; Corica, Domenico; Ricciardi, Luisa; Romano, Claudio

    2017-11-01

    In the last decade, the ingestion of gluten, a heterogeneous complex of proteins present in wheat, rice, barley and probably in oats, has been associated with clinical disorders, such as celiac disease, wheat allergy and recently to non-celiac gluten sensitivity or wheat intolerance syndrome. Gluten-related disorders, which are becoming epidemiologically relevant with an estimated global prevalence of about 5%, require the exclusion of gluten from the diet. For the past 5 years, an important shift in the availability of gluten-free products, together with increased consumption in the general population, has been recorded and is estimated to be about 12-25%. Many people follow a self-prescribed gluten-free diet, despite the fact that the majority have not first been previously excluded, or confirmed, as having gluten disorders. They rely on claims that a gluten-free diet improves general health. In this review, we provide an overview of the clinical disorders related to gluten or wheat ingestion, pointing out the current certainties, open questions, possible answers and several doubts in the management of these conditions. KEY MESSAGE Incidence of gluten-related disorders is increased in the last decade and self-diagnosis is frequent with inappropriate starting of a gluten-free diet. Gluten and wheat are considered as the most important triggers to coeliac disease, wheat allergy and non-celiac gluten sensitivity. Pediatricians, allergologist and gastroenterologist are involved in the management of these conditions and appropriate diagnostic protocols are required.

  7. Deposition of dielectric films on silicon using a fore-vacuum plasma electron source

    Energy Technology Data Exchange (ETDEWEB)

    Zolotukhin, D. B.; Tyunkov, A. V.; Yushkov, Yu. G., E-mail: yuyushkov@gmail.com [Tomsk State University of Control Systems and Radioelectronics, 40 Lenin Ave., Tomsk 634050 (Russian Federation); Oks, E. M. [Tomsk State University of Control Systems and Radioelectronics, 40 Lenin Ave., Tomsk 634050 (Russian Federation); Institute of High Current Electronics SB RAS, 2/3, Akademichesky Ave., Tomsk 634055 (Russian Federation)

    2016-06-15

    We describe an experiment on the use of a fore-vacuum-pressure, plasma-cathode, electron beam source with current up to 100 mA and beam energy up to 15 keV for deposition of Mg and Al oxide films on Si substrates in an oxygen atmosphere at a pressure of 10 Pa. The metals (Al and Mg) were evaporated and ionized using the electron beam with the formation of a gas-metal beam-plasma. The plasma was deposited on the surface of Si substrates. The elemental composition of the deposited films was analyzed.

  8. Gluten contamination in gluten-free bakery products: a risk for coeliac disease patients.

    Science.gov (United States)

    Farage, Priscila; de Medeiros Nóbrega, Yanna Karla; Pratesi, Riccardo; Gandolfi, Lenora; Assunção, Pedro; Zandonadi, Renata Puppin

    2017-02-01

    The present study aimed to assess the safety of gluten-free bakery products for consumption by coeliac patients. Design/setting In the current exploratory cross-sectional quantitative study, a total of 130 samples were collected from twenty-five bakeries in Brasilia (Brazil). For the quantification of gluten, an ELISA was used. The threshold of 20 ppm gluten was considered as the safe upper limit for gluten-free food, as proposed in the Codex Alimentarius. The results revealed a total of 21·5 % of contamination among the bakery products sampled. Sixty-four per cent of the bakeries sold at least one contaminated product in our sample. These findings represent a risk for coeliac patients since the ingestion of gluten traces may be sufficient to adversely impact on their health.

  9. Electron microscopy studies of octa-calcium phosphate thin films obtained by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Iliescu, Monica; Nelea, V.; Werckmann, J.; Mihailescu, I.N.; Socol, G.; Bigi, Adriana; Bracci, Barbara

    2004-04-01

    Octa-calcium phosphate (OCP), Ca{sub 8}(HPO{sub 4}){sub 2}(PO{sub 4}){sub 4}{center_dot}5H{sub 2}O, is present as transient compound in the precipitation of hydroxyapatite (HA) and biological apatites. Because of these characteristics, OCP plays a crucial role in the in-vivo mineralization of human bones and teeth. The use of OCP in developing new generations of bone prosthesis stands therefore for an innovative challenge. This paper reports studies of OCP structures grown in the form of thin films by pulsed laser deposition (PLD) with emphasis on electron microscopy investigations. OCP films were grown on etched Ti substrates, using an UV KrF* excimer laser source ({lambda}=248 nm, {tau}{>=}20 ns). Films were deposited in low-pressure (50 Pa) water vapors environment on substrates heated at 20-180 deg. C. We performed annealing treatments in water vapors and ambient pressure at substrate temperatures identical to those used during deposition. Comprehensive structural and morphological investigations were carried out with different based-electron microscopy procedures. Grazing incidence X-ray diffraction (GIXRD) and white light confocal microscopy were also applied to characterize the films. Ca/P atomic ratio of films was determined by energy dispersive X-ray spectrometry, electron energy loss spectroscopy and X-ray photoelectron spectroscopy. The obtained films generally exhibit an amorphous structure, as evidenced by GIXRD. Nevertheless, cross-section transmission electron microscopy investigations provide supplementary information about the film characteristics and material crystallization in small domains. OCP nanoparticles coalesce and grow perpendicular to the substrate in a tree-like structure, comparable to a coral reef.

  10. PLZT Film Capacitors for Power Electronics and Energy Storage Applications

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Beihai; Hu, Zhongqiang; Koritala, Rachel E.; Lee, Tae H.; Dorris, Stephen E.; Balachandran, Uthamalingam

    2015-12-01

    Ceramic film capacitors with high dielectric constant and high breakdown strength hold special promise for applications demanding high power density. By means of chemical solution deposition, we deposited ≈2-μm-thick films of lanthanum-doped lead zirconate titanate (PLZT) on LaNiO3-buffered Ni (LNO/Ni) foils and platinized silicon (PtSi) substrates. The dielectric properties and energy storage performance of the resulting samples were determined under a high level of applied electric field. X-ray diffraction stress analysis revealed that PLZT on LNO/Ni bears a compressive stress of ≈370 MPa while PLZT on PtSi endures a tensile stress of ≈250 MPa. Compressive stress was found to lead to heightened polarization, improved tunability, increased irreversible domain wall motion, and enhanced breakdown strength for PLZT deposited on the LNO/Ni as compared with the PtSi substrate. We observed a tunability of ≈55 and ≈40 % at room temperature under 100 kV/cm applied field, remanent polarization of ≈23.5 and ≈7.4 µC/cm^2, coercive electric field of ≈25.6 and ≈21.1 kV/cm, and dielectric breakdown strength of ≈2.6 and ≈1.5 MV/cm for PLZT deposited on LNO/Ni foils and PtSi substrates, respectively. A high recoverable energy density of ≈85 J/cm^3 and energy conversion efficiency of ≈65 % were measured on the PLZT film grown on LNO/Ni.

  11. Investigation of defects in In–Ga–Zn oxide thin film using electron spin resonance signals

    International Nuclear Information System (INIS)

    Nonaka, Yusuke; Kurosawa, Yoichi; Komatsu, Yoshihiro; Ishihara, Noritaka; Oota, Masashi; Nakashima, Motoki; Hirohashi, Takuya; Takahashi, Masahiro; Yamazaki, Shunpei; Obonai, Toshimitsu; Hosaka, Yasuharu; Koezuka, Junichi; Yamauchi, Jun

    2014-01-01

    In–Ga–Zn oxide (IGZO) is a next-generation semiconductor material seen as an alternative to silicon. Despite the importance of the controllability of characteristics and the reliability of devices, defects in IGZO have not been fully understood. We investigated defects in IGZO thin films using electron spin resonance (ESR) spectroscopy. In as-sputtered IGZO thin films, we observed an ESR signal which had a g-value of g = 2.010, and the signal was found to disappear under thermal treatment. Annealing in a reductive atmosphere, such as N 2 atmosphere, generated an ESR signal with g = 1.932 in IGZO thin films. The temperature dependence of the latter signal suggests that the signal is induced by delocalized unpaired electrons (i.e., conduction electrons). In fact, a comparison between the conductivity and ESR signal intensity revealed that the signal's intensity is related to the number of conduction electrons in the IGZO thin film. The signal's intensity did not increase with oxygen vacancy alone but also with increases in both oxygen vacancy and hydrogen concentration. In addition, first-principle calculation suggests that the conduction electrons in IGZO may be generated by defects that occur when hydrogen atoms are inserted into oxygen vacancies

  12. Investigation of defects in In–Ga–Zn oxide thin film using electron spin resonance signals

    Energy Technology Data Exchange (ETDEWEB)

    Nonaka, Yusuke; Kurosawa, Yoichi; Komatsu, Yoshihiro; Ishihara, Noritaka; Oota, Masashi; Nakashima, Motoki; Hirohashi, Takuya; Takahashi, Masahiro; Yamazaki, Shunpei [Semiconductor Energy Laboratory Co., Ltd., 398 Hase, Atsugi, Kanagawa 243-0036 (Japan); Obonai, Toshimitsu; Hosaka, Yasuharu; Koezuka, Junichi [Advanced Film Device, Inc., 161-2 Masuzuka, Tsuga-machi, Tochigi, Tochigi 328-0114 (Japan); Yamauchi, Jun [Semiconductor Energy Laboratory Co., Ltd., 398 Hase, Atsugi, Kanagawa 243-0036 (Japan); Emeritus Professor of Kyoto University, Oiwake-cho, Kitashirakawa, Kyoto 606-8502 (Japan)

    2014-04-28

    In–Ga–Zn oxide (IGZO) is a next-generation semiconductor material seen as an alternative to silicon. Despite the importance of the controllability of characteristics and the reliability of devices, defects in IGZO have not been fully understood. We investigated defects in IGZO thin films using electron spin resonance (ESR) spectroscopy. In as-sputtered IGZO thin films, we observed an ESR signal which had a g-value of g = 2.010, and the signal was found to disappear under thermal treatment. Annealing in a reductive atmosphere, such as N{sub 2} atmosphere, generated an ESR signal with g = 1.932 in IGZO thin films. The temperature dependence of the latter signal suggests that the signal is induced by delocalized unpaired electrons (i.e., conduction electrons). In fact, a comparison between the conductivity and ESR signal intensity revealed that the signal's intensity is related to the number of conduction electrons in the IGZO thin film. The signal's intensity did not increase with oxygen vacancy alone but also with increases in both oxygen vacancy and hydrogen concentration. In addition, first-principle calculation suggests that the conduction electrons in IGZO may be generated by defects that occur when hydrogen atoms are inserted into oxygen vacancies.

  13. High energy electron irradiation effects on Ga-doped ZnO thin films for optoelectronic space applications

    Science.gov (United States)

    Serrao, Felcy Jyothi; Sandeep, K. M.; Bhat, Shreesha; Dharmaprakash, S. M.

    2018-03-01

    Gallium-doped ZnO (GZO) thin films of thickness 394 nm were prepared by a simple, cost-effective sol-gel spin coating method. The effect of 8 MeV electron beam irradiation with different irradiation doses ranging from 0 to 10 kGy on the structural, optical and electrical properties was investigated. Electron irradiation influences the changes in the structural properties and surface morphology of GZO thin films. X-ray diffraction analysis showed that the polycrystalline nature of the GZO films is unaffected by the high energy electron irradiation. The grain size and the surface roughness were found maximum for the GZO film irradiated with 10 kGy electron dosage. The average transmittance of GZO thin films decreased after electron irradiation. The optical band gap of Ga-doped ZnO films was decreased with the increase in the electron dosage. The electrical resistivity of GZO films decreased from 4.83 × 10-3 to 8.725 × 10-4 Ω cm, when the electron dosage was increased from 0 to 10 kGy. The variation in the optical and electrical properties in the Ga-doped ZnO thin films due to electron beam irradiation in the present study is useful in deciding their compatibility in optoelectronic device applications in electron radiation environment.

  14. Performances of screen-printing silver thick films: Rheology, morphology, mechanical and electronic properties

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Jung-Shiun; Liang, Jau-En; Yi, Han-Liou [Department of Chemical Engineering, National Chung Cheng University, Chia Yi 621, Taiwan, ROC (China); Chen, Shu-Hua [China Steel Corporation, Kaohsiung City 806, Taiwan, ROC (China); Hua, Chi-Chung, E-mail: chmcch@ccu.edu.tw [Department of Chemical Engineering, National Chung Cheng University, Chia Yi 621, Taiwan, ROC (China)

    2016-06-15

    Numerous recent applications with inorganic solar cells and energy storage electrodes make use of silver pastes through processes like screen-printing to fabricate fine conductive lines for electron conducting purpose. To date, however, there have been few studies that systematically revealed the properties of the silver paste in relation to the mechanical and electronic performances of screen-printing thick films. In this work, the rheological properties of a series of model silver pastes made of silver powders of varying size (0.9, 1.3, and 1.5 μm) and shape (irregular and spherical) were explored, and the results were systematically correlated with the morphological feature (scanning electron microscopy, SEM) and mechanical (peeling test) and electronic (transmission line method, TLM) performances of screen-printing dried or sintered thick films. We provided evidence of generally intimate correlations between the powder dispersion state in silver pastes—which is shown to be well captured by the rheological protocols employed herein—and the performances of screen-printing thick films. Overall, this study suggests the powder dispersion state and the associated phase behavior of a paste sample can significantly impact not only the morphological and electronic but also mechanical performances of screen-printing thick films, and, in future perspectives, a proper combination of silver powders of different sizes and even shapes could help reconcile quality and stability of an optimum silver paste. - Highlights: • Powder dispersion correlates well with screen-printing thick film performances. • Rheological fingerprints can be utilized to fathom the powder dispersion state. • Good polymer-powder interactions in the paste ensure good powder dispersion. • Time-dependent gel-like viscoelastic features are found with optimum silver pastes. • The size and shape of functional powder affect the dispersion and film performances.

  15. Ion irradiation of AZO thin films for flexible electronics

    Science.gov (United States)

    Boscarino, Stefano; Torrisi, Giacomo; Crupi, Isodiana; Alberti, Alessandra; Mirabella, Salvatore; Ruffino, Francesco; Terrasi, Antonio

    2017-02-01

    Aluminum doped Zinc oxide (AZO) is a promising transparent conductor for solar cells, displays and touch-screen technologies. The resistivity of AZO is typically improved by thermal annealing at temperatures not suitable for plastic substrates. Here we present a non-thermal route to improve the electrical and structural properties of AZO by irradiating the TCO films with O+ or Ar+ ion beams (30-350 keV, 3 × 1015-3 × 1016 ions/cm2) after the deposition on glass and flexible polyethylene naphthalate (PEN). X-ray diffraction, optical absorption, electrical measurements, Rutherford Backscattering Spectrometry and Atomic Force Microscopy evidenced an increase of the crystalline grain size and a complete relief of the lattice strain upon ion beam irradiation. Indeed, the resistivity of thin AZO films irradiated at room temperature decreased of two orders of magnitude, similarly to a thermal annealing at 400 °C. We also show that the improvement of the electrical properties does not simply depend on the strain or polycrystalline domain size, as often stated in the literature.

  16. Celiac disease treatment: gluten-free diet and beyond.

    Science.gov (United States)

    Mäki, Markku

    2014-07-01

    The basis for celiac disease (CD) treatment is a strict lifelong gluten-free diet. On the diet, the small intestinal mucosal injury heals and gluten-induced symptoms and signs disappear. The mucosal healing is a prerequisite for sustaining health and is also obtained with a diet containing oats and trace amounts of gluten, industrially purified wheat starch-based gluten-free products. The small intestinal mucosa does not heal in noncompliant people, nor when a patient is inadvertently ingesting gluten. Development of adjunctive or alternative therapies is on its way. There are several novel treatment pipelines within academy and industry. Examples are the ideas of using glutenases as a drug to degrade the ingested gluten, polymers to bind and sequester the gluten to the feces, and also vaccine development for an immunotherapy to induce tolerance towards gluten. Clinical drug trials are to be foreseen in CD, soon also in children.

  17. Thermal Characteristics of Plastic Film Tension in Roll-to-Roll Gravure Printed Electronics

    Directory of Open Access Journals (Sweden)

    Kui He

    2018-02-01

    Full Text Available In the printing section of a roll-to-roll gravure printed electronics machine, the plastic film tension is directly associated with the product quality. The temperature distribution of the plastic film in the printing section is non-uniform, because of the higher drying temperature and the lower room temperature. Furthermore, the drying temperature and the room temperature are not constants in industrial production. As the plastic film is sensitive to temperature, the temperature of the plastic film will affects the web tension in the printing section. In this paper, the thermal characteristics of the plastic film tension in roll-to-roll gravure printed electronics are studied in order to help to improve the product quality. First, the tension model including the factor of temperature is derived based on the law of mass conservation. Then, some simulations and experiments are carried out in order to in-depth research the effects of the drying temperature and room temperature based on the relations between system inputs and outputs. The results show that the drying temperature and room temperature have significant influences on the web tension. The research on the thermal characteristics of plastic film tension would benefit the tension control accuracy for further study.

  18. Response of custom-developed radiochromic dye films after electron irradiation

    International Nuclear Information System (INIS)

    Vargas-Aburto, C.; Uribe, R.M.; McLauglin, W.L.; Dick, C.E.

    1995-01-01

    Radiochromic dye (RD) films with varying formulations have been produced in this laboratory and are being used to aid in the determination of both the absorbed dose in irradiated test materials as well as the spatial homogeneity of the electron beam used to perform the irradiations. Specifically, these films have been used during the irradiation of both photovoltaic (solar cells) and liquid crystal-based devices (light valves). However, the optical response of RD films is known to be affected by post-irradiation conditions, such as the storage time and temperature, among others. This work represents a study of the time-dependence of the response of the custom-developed RD films. The change in response has been studied for every formulation, as a function of two different post-irradiation storage temperatures (23 degrees C and 45 degrees C) for a period of six months. Results show that significant changes in the response of these films can be observed even after this extended period. These results are compared with those obtained by other authors on similar films subjected to both electron and gamma ( 60 Co) radiation

  19. Ion assistance effects on electron beam deposited MgF sub 2 films

    CERN Document Server

    Alvisi, M; Della Patria, A; Di Giulio, M; Masetti, E; Perrone, M R; Protopapa, M L; Tepore, A

    2002-01-01

    Thin films of MgF sub 2 have been deposited by the ion-assisted electron-beam evaporation technique in order to find out the ion beam parameters leading to films of high laser damage threshold whose optical properties are stable under uncontrolled atmosphere conditions. It has been found that the ion-assisted electron-beam evaporation technique allows getting films with optical properties (refraction index and extinction coefficient) of high environmental stability by properly choosing the ion-source voltage and current. But, the laser damage fluence at 308 nm was quite dependent on the assisting ion beam parameters. Larger laser damage fluences have been found for the films deposited by using assisting ion beams delivered at lower anode voltage and current values. It has also been found that the films deposited without ion assistance were characterized by the highest laser damage fluence (5.9 J/cm sup 2) and the lowest environmental stability. The scanning electron microscopy analysis of the irradiated areas...

  20. Influence of metallic surface states on electron affinity of epitaxial AlN films

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Monu; Krishna, Shibin; Aggarwal, Neha [Advanced Materials and Devices Division, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Gupta, Govind, E-mail: govind@nplindia.org [Advanced Materials and Devices Division, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India)

    2017-06-15

    The present article investigates surface metallic states induced alteration in the electron affinity of epitaxial AlN films. AlN films grown by plasma-assisted molecular beam epitaxy system with (30% and 16%) and without metallic aluminium on the surface were probed via photoemission spectroscopic measurements. An in-depth analysis exploring the influence of metallic aluminium and native oxide on the electronic structure of the films is performed. It was observed that the metallic states pinned the Fermi Level (FL) near valence band edge and lead to the reduction of electron affinity (EA). These metallic states initiated charge transfer and induced changes in surface and interface dipoles strength. Therefore, the EA of the films varied between 0.6–1.0 eV due to the variation in contribution of metallic states and native oxide. However, the surface barrier height (SBH) increased (4.2–3.5 eV) adversely due to the availability of donor-like surface states in metallic aluminium rich films.

  1. Characterization of Si:O:C:H films fabricated using electron emission enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Durrant, Steven F. [Laboratorio de Plasmas Tecnologicos, Campus Experimental de Sorocaba, Universidade Estadual Paulista-UNESP, Avenida Tres de Marco, 511, Alto da Boa Vista, 18087-180, Soracaba, SP (Brazil)], E-mail: steve@sorocaba.unesp.br; Rouxinol, Francisco P.M.; Gelamo, Rogerio V. [Instituto de Fisica Gleb Wataghin, Universidade Estadual de Campinas, 13083-970, Campinas, SP (Brazil); Trasferetti, B. Claudio [Present address: Superintendencia Regional da Policia Federal em Sao Paulo, Setor Tecnico-Cientifico, Rua Hugo d' Antola 95/10o Andar, Lapa de Baixo, 05038-090 Sao Paulo, SP (Brazil); Davanzo, C.U. [Instituto de Quimica, Universidade Estadual de Campinas, 13083-970, Campinas, SP (Brazil); Bica de Moraes, Mario A. [Instituto de Fisica Gleb Wataghin, Universidade Estadual de Campinas, 13083-970, Campinas, SP (Brazil)

    2008-01-15

    Silicon-based polymers and oxides may be formed when vapours of oxygen-containing organosilicone compounds are exposed to energetic electrons drawn from a hot filament by a bias potential applied to a second electrode in a controlled atmosphere in a vacuum chamber. As little deposition occurs in the absence of the bias potential, electron impact fragmentation is the key mechanism in film fabrication using electron-emission enhanced chemical vapour deposition (EEECVD). The feasibility of depositing amorphous hydrogenated carbon films also containing silicon from plasmas of tetramethylsilane or hexamethyldisiloxane has already been shown. In this work, we report the deposition of diverse films from plasmas of tetraethoxysilane (TEOS)-argon mixtures and the characterization of the materials obtained. The effects of changes in the substrate holder bias (V{sub S}) and of the proportion of TEOS in the mixture (X{sub T}) on the chemical structure of the films are examined by infrared-reflection absorption spectroscopy (IRRAS) at near-normal and oblique incidence using unpolarised and p-polarised, light, respectively. The latter is particularly useful in detecting vibrational modes not observed when using conventional near-normal incidence. Elemental analyses of the film were carried out by X-ray photoelectron spectroscopy (XPS), which was also useful in complementary structural investigations. In addition, the dependencies of the deposition rate on V{sub S} and X{sub T} are presented.

  2. Studies on the high electronic energy deposition in polyaniline thin films

    International Nuclear Information System (INIS)

    Deshpande, N.G.; Gudage, Y.G.; Vyas, J.C.; Singh, F.; Sharma, Ramphal

    2008-01-01

    We report here the physico-chemical changes brought about by high electronic energy deposition of gold ions in HCl doped polyaniline (PANI) thin films. PANI thin films were synthesized by in situ polymerization technique. The as-synthesized PANI thin films of thickness 160 nm were irradiated using Au 7+ ion of 100 MeV energy at different fluences, namely, 5 x 10 11 ions/cm 2 and 5 x 10 12 ions/cm 2 , respectively. A significant change was seen after irradiation in electrical and photo conductivity, which may be related to increased carrier concentration, and structural modifications in the polymer film. In addition, the high electronic energy deposition showed other effects like cross-linking of polymer chains, bond breaking and creation of defect sites. AFM observations revealed mountainous type features in all (before and after irradiation) PANI samples. The average size (diameter) and density of such mountainous clusters were found to be related with the ion fluence. The AFM profiles also showed change in the surface roughness of the films with respect to irradiation, which is one of the peculiarity of the high electronic energy deposition technique

  3. Bright luminance from silicon dioxide film with carbon nanotube electron beam exposure

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Su Woong; Hong, Ji Hwan; Kang, Jung Su; Callixte, Shikili; Park, Kyu Chang, E-mail: kyupark@khu.ac.kr

    2016-02-15

    We observed the bright bluish-white luminescence with naked eye from carbon nanotube electron beam exposed silicon dioxide (SiO{sub 2}) thin film on Si substrate. The luminescence shows a peak intensity at 2.7 eV (460 nm) with wide spread up to 600 nm after the C-beam exposed on SiO{sub 2} thin film. The C-beam exposure system is composed of carbon nanotube emitters as electron beam source. The brightness strongly depend on the exposure condition. Luminescence characteristic was optimized by C-beam adjustment to observe with the naked eye. The cause of luminescence in the C-beam exposed SiO{sub 2} thin film is analyzed by CL microscopy, FT-IR, AFM and ellipsometer. Decrease of Si–O bonding was observed after C-beam exposure, and this reveals that oxygen deficient defects which are irradiation-sensitive cause 2.7 eV peak of luminescence. - Highlights: • We observed bright luminescence for SiO{sub 2} thin film with naked eye by carbon nanotube electron beam (C-beam) exposure technique. • The bright luminance from C-beam exposed SiO{sub 2} film will open novel silicon optoelectronics.

  4. Characterization of Si:O:C:H films fabricated using electron emission enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Durrant, Steven F.; Rouxinol, Francisco P.M.; Gelamo, Rogerio V.; Trasferetti, B. Claudio; Davanzo, C.U.; Bica de Moraes, Mario A.

    2008-01-01

    Silicon-based polymers and oxides may be formed when vapours of oxygen-containing organosilicone compounds are exposed to energetic electrons drawn from a hot filament by a bias potential applied to a second electrode in a controlled atmosphere in a vacuum chamber. As little deposition occurs in the absence of the bias potential, electron impact fragmentation is the key mechanism in film fabrication using electron-emission enhanced chemical vapour deposition (EEECVD). The feasibility of depositing amorphous hydrogenated carbon films also containing silicon from plasmas of tetramethylsilane or hexamethyldisiloxane has already been shown. In this work, we report the deposition of diverse films from plasmas of tetraethoxysilane (TEOS)-argon mixtures and the characterization of the materials obtained. The effects of changes in the substrate holder bias (V S ) and of the proportion of TEOS in the mixture (X T ) on the chemical structure of the films are examined by infrared-reflection absorption spectroscopy (IRRAS) at near-normal and oblique incidence using unpolarised and p-polarised, light, respectively. The latter is particularly useful in detecting vibrational modes not observed when using conventional near-normal incidence. Elemental analyses of the film were carried out by X-ray photoelectron spectroscopy (XPS), which was also useful in complementary structural investigations. In addition, the dependencies of the deposition rate on V S and X T are presented

  5. Effect of ballistic electrons on ultrafast thermomechanical responses of a thin metal film

    International Nuclear Information System (INIS)

    Xiong Qi-lin; Tian Xin

    2017-01-01

    The ultrafast thermomechanical coupling problem in a thin gold film irradiated by ultrashort laser pulses with different electron ballistic depths is investigated via the ultrafast thermoelasticity model. The solution of the problem is obtained by solving finite element governing equations. The comparison between the results of ultrafast thermomechanical coupling responses with different electron ballistic depths is made to show the ballistic electron effect. It is found that the ballistic electrons have a significant influence on the ultrafast thermomechanical coupling behaviors of the gold thin film and the best laser micromachining results can be achieved by choosing the specific laser technology (large or small ballistic range). In addition, the influence of simplification of the ultrashort laser pulse source on the results is studied, and it is found that the simplification has a great influence on the thermomechanical responses, which implies that care should be taken when the simplified form of the laser source term is applied as the Gaussian heat source. (paper)

  6. Writing on ultra thin uniaxially oriented polymer films with an electron beam

    International Nuclear Information System (INIS)

    Petermann, J.; Wenderoth, K.

    1990-01-01

    Information storage polymers have been described and used for many years. When using an electron beam to store information, chemical changes in the macromolecules via local radiation damage is utilized to print the information into the polymer. This letter reports the writing of optically detectable information into birefringent polymer films. The method is based on the fact that preferred orientation of the macromolecules can be destroyed by electron radiation damage. The damage is produced by an electron beam in a transmission electron microscope. The resulting information is observed optically in a polarizing microscope. The polymer films used in the present study were polybutene 1 (PB 1), polyethylene (PE) and polyvinyl-idenfluoride (PVDF). (author)

  7. Complete chemical transformation of a molecular film by subexcitation electrons (<3 eV).

    Science.gov (United States)

    Balog, Richard; Illenberger, Eugen

    2003-11-21

    The potential of slow electrons to act as a soft tool to control a chemical reaction in the condensed phase is demonstrated. By setting the energy of a well defined electron beam to values below 3 eV, the surface of a thin film of 1,2-C(2)F(4)C(l2) molecules can completely be transformed into molecular chlorine (and by-products, possibly perfluorinated polymers). At higher energies (>6 eV) some equilibrium state between product and educt composition can be achieved, however, accompanied by a gradual overall degradation of the film. The effect of complete transformation is based on both the selectivity and particular energy dependence of the initial step of the reaction which is dissociative electron attachment to C(2)F(4)C(l2), but also the fact that the initial molecule is efficiently decomposed by subexcitation electrons while the product C(l2) is virtually unaffected.

  8. Low energy electron irradiation induced carbon etching: Triggering carbon film reacting with oxygen from SiO{sub 2} substrate

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Cheng [Institute of Nanosurface Science and Engineering (INSE), Shenzhen University, Shenzhen 518060 (China); Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060 (China); Wang, Chao, E-mail: cwang367@szu.edu.cn, E-mail: dfdiao@szu.edu.cn; Diao, Dongfeng, E-mail: cwang367@szu.edu.cn, E-mail: dfdiao@szu.edu.cn [Institute of Nanosurface Science and Engineering (INSE), Shenzhen University, Shenzhen 518060 (China)

    2016-08-01

    We report low-energy (50–200 eV) electron irradiation induced etching of thin carbon films on a SiO{sub 2} substrate. The etching mechanism was interpreted that electron irradiation stimulated the dissociation of the carbon film and SiO{sub 2}, and then triggered the carbon film reacting with oxygen from the SiO{sub 2} substrate. A requirement for triggering the etching of the carbon film is that the incident electron penetrates through the whole carbon film, which is related to both irradiation energy and film thickness. This study provides a convenient electron-assisted etching with the precursor substrate, which sheds light on an efficient pathway to the fabrication of nanodevices and nanosurfaces.

  9. Strontium titanate thin film deposition - structural and electronical characterization

    Energy Technology Data Exchange (ETDEWEB)

    Hanzig, Florian; Hanzig, Juliane; Stoecker, Hartmut; Mehner, Erik; Abendroth, Barbara; Meyer, Dirk C. [TU Bergakademie Freiberg, Institut fuer Experimentelle Physik (Germany); Franke, Michael [TU Bergakademie Freiberg, Institut fuer Elektronik- und Sensormaterialien (Germany)

    2012-07-01

    Strontium titanate is on the one hand a widely-used model oxide for solids which crystallize in perovskite type of structure. On the other hand, with its large band-gap energy and its mixed ionic and electronic conductivity, SrTiO{sub 3} is a promising isolating material in metal-insulator-metal (MIM) structures for resistive switching memory cells. Here, we used physical vapour deposition methods (e. g. electron-beam and sputtering) to produce strontium titanate layers. Sample thicknesses were probed with X-ray reflectometry (XRR) and spectroscopic ellipsometry (SE). Additionally, layer densities and dielectric functions were quantified with XRR and SE, respectively. Using infrared spectroscopy free electron concentrations were obtained. Phase and element composition analysis was carried out with grazing incidence X-ray diffraction and X-ray photoelectron spectroscopy. Subsequent temperature treatment of samples lead to crystallization of the initially amorphous strontium titanate.

  10. Experimental studies on the electronic structure of pyrite FeS2 films prepared by thermally sulfurizing iron films

    International Nuclear Information System (INIS)

    Zhang Hui; Wang Baoyi; Zhang Rengang; Zhang Zhe; Wei Long; Qian Haijie; Su Run; Kui Rexi

    2006-01-01

    Pyrite FeS 2 films have been prepared by thermally sulfurizing iron films deposited by magnetron sputtering. The electronic structures were studies by X-ray absorption near edge structure and X-ray photoemission spectrum. The results show that an S 3p valence band with relatively higher intensity compared to the calculation exists in 2-10 eV range and a high density below the Fermi level of Fe 3d states were detected. A second gap of 2.8 eV in the unoccupied density of states was found above the conduction band which was 2.4 eV by experimentally calculation. The difference between t 2g and e g which were formed in an octahedral crystal field was computed to be 2.1 eV. (authors)

  11. Magnetic and electronic properties of SrMnO3 thin films

    Science.gov (United States)

    Mandal, Arup Kumar; Panchal, Gyanendra; Choudhary, R. J.; Phase, D. M.

    2018-05-01

    Single phase hexagonal bulk SrMnO3 (SMO) was prepared by solid state route and it was used for depositing thin films by pulsed laser deposition (PLD) technique on single crystalline (100) oriented SrTiO3 (STO) substrate. X-ray diffraction shows that the thin film is deposited in cubic SrMnO3 phase. From X-ray absorption at the Mn L edge we observed the mixed valency of Mn (Mn3+& Mn4+) due to strain induced by the lattice mismatching between SMO and STO. Due to this mixed valency of Mn ion in SMO film, the ferromagnetic nature is observed at lower temperature because of double exchange. After post annealing with very low oxygen partial pressure, magnetic and electronic property of SMO films are effectively modified.

  12. Structural, morphological and electronic properties of pulsed laser grown Eu2O3 thin films

    Science.gov (United States)

    Kumar, Sandeep; Prakash, Ram; Choudhary, R. J.; Phase, D. M.

    2018-05-01

    Herein, we report the growth, structural, morphological and electronic properties of Europium sesquioxide (Eu2O3) thin films on Si [1 0 0] substrate using pulsed laser deposition technique. The films were deposited at ˜750 °C substrate temperature while the oxygen partial pressure (OPP) was varied (vacuum,˜1 mTorr, ˜10 mTorr and ˜300 mTorr). X-ray diffraction results confirm the single phase cubic structure of the film grown at ˜300 mTorr. The XRD results are also supported by the Raman's spectroscopy results. Eu-3d XPS core level spectra confirms the dominant contributions from the "3+" states of Eu in the film.

  13. Crystalline and electronic structure of epitaxial γ-Al2O3 films

    International Nuclear Information System (INIS)

    Wu, Huiyan; Lu, Dawei; Zhu, Kerong; Xu, Guoyong; Wang, Hu

    2013-01-01

    Epitaxial γ-Al 2 O 3 films were fabricated on SrTiO 3 (1 0 0) substrates using pulsed laser deposition (PLD) technique. The high quality of epitaxial growth γ-Al 2 O 3 films was confirmed by X-ray diffraction (XRD). Atomic force microscopy (AFM) images indicated the smooth surfaces and the step-flow growth of the films. In order to illuminate the electronic properties and the local structure of the epitaxial γ-Al 2 O 3 , we experimentally measured the X-ray absorption near-edge structure (XANES) spectrum at the O K-edge and compared the spectrum with the theoretical simulations by using various structure models. Our results based on XANES spectrum analysis indicated that the structure of the epitaxial γ-Al 2 O 3 film was a defective spinel with Al vacancies, which prefer to be located at the octahedral sites

  14. Electron tunneling studies of ultrathin films near the superconductor-to-insulator transition

    International Nuclear Information System (INIS)

    Valles, J.M. Jr.; Garno, J.P.

    1994-01-01

    Electron tunneling measurements on ultrathin quench-condensed films near the superconductor-to-insulator (SI) transition reveal that the superconducting state degrades with increasing normal state sheet resistance, R □ , in a manner that depends strongly on film morphology. In homogeneously disordered films, the superconducting energy gap Δ 0 decreases continuously and appears to go to zero at the SI transition. In granular films the transport properties degrade while Δ 0 remains constant. Measurements in the normal state reveal disorder enhanced e - -e - interaction corrections to the density of states. These effects are strong and depend on morphology in a manner that is consistent with their playing an important role in driving the SI transition. (orig.)

  15. Photoluminescence of electron beam evaporated CaS:Bi thin films

    CERN Document Server

    Smet, P F; Poelman, D R; Meirhaeghe, R L V

    2003-01-01

    For the first time, the photoluminescence (PL) of electron beam evaporated CaS:Bi thin films is reported. Luminescent CaS:Bi powder prepared out of aqueous solutions was used as source material. The influence of substrate temperature on the PL and the morphology of thin films is discussed, and an optimum is determined. Substrate temperatures between 200 deg. C and 300 deg. C lead to good quality thin films with sufficient PL intensity. As-deposited thin films show two emission bands, peaking at 450 and 530 nm. Upon annealing the emission intensity increases, and annealing at 800 deg. C is sufficient to obtain a homogeneously blue emitting thin film (CIE colour coordinates (0.17; 0.12)), thanks to a single remaining emission band at 450 nm. The influence of ambient temperature on the PL of CaS:Bi powder and thin films was also investigated and it was found that CaS:Bi thin films show a favourable thermal quenching behaviour near room temperature.

  16. Structure of ultrathin Pd films determined by low-energy electron microscopy and diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Santos, B; De la Figuera, J [Centro de Microanalisis de Materiales, Universidad Autonoma de Madrid, Madrid 28049 (Spain); Puerta, J M; Cerda, J I [Instituto de Ciencia de Materiales, CSIC, Madrid 28049 (Spain); Herranz, T [Instituto de Quimica-Fisica ' Rocasolano' , CSIC, Madrid 28006 (Spain); McCarty, K F [Sandia National Laboratories, Livermore, CA 94550 (United States)], E-mail: benitosantos001@gmail.com

    2010-02-15

    Palladium (Pd) films have been grown and characterized in situ by low-energy electron diffraction (LEED) and microscopy in two different regimes: ultrathin films 2-6 monolayers (ML) thick on Ru(0001), and {approx}20 ML thick films on both Ru(0001) and W(110). The thinner films are grown at elevated temperature (750 K) and are lattice matched to the Ru(0001) substrate. The thicker films, deposited at room temperature and annealed to 880 K, have a relaxed in-plane lattice spacing. All the films present an fcc stacking sequence as determined by LEED intensity versus energy analysis. In all the films, there is hardly any expansion in the surface-layer interlayer spacing. Two types of twin-related stacking sequences of the Pd layers are found on each substrate. On W(110) the two fcc twin types can occur on a single substrate terrace. On Ru(0001) each substrate terrace has a single twin type and the twin boundaries replicate the substrate steps.

  17. Electron irradiation effects on partially fluorinated polymer films: Structure-property relationships

    CERN Document Server

    Nasef, M M

    2003-01-01

    The effects of electron beam irradiation on two partially fluorinated polymer films i.e. poly(vinylidene fluoride) (PVDF) and poly(ethylene-tetrafluoroethylene) copolymer (ETFE) are studied at doses ranging from 100 to 1200 kGy in air at room temperature. Chemical structure, thermal and mechanical properties of irradiated films are investigated. FTIR show that both PVDF and ETFE films undergo similar changes in their chemical structures including the formation of carbonyl groups and double bonding. The changes in melting and crystallisation temperatures (T sub m and T sub c) in both irradiated films are functions of irradiation dose and reflect the disorder in the chemical structure caused by the competition between crosslinking and chain scission. The heat of melting (DELTA H sub m) and the degree of crystallinity (X sub c) of PVDF films show no significant changes with the dose increase, whereas those of ETFE films are reduced rapidly after the first 100 kGy. The tensile strength of PVDF films is improved b...

  18. Rate constant of free electrons and holes recombination in thin films CdSe

    International Nuclear Information System (INIS)

    Radychev, N.A.; Novikov, G.F.

    2006-01-01

    Destruction kinetics of electrons generated in thin films CdSe by laser impulse (wave length is 337 nm, period of impulse - 8 nc) is studied by the method of microwave photoconductivity (36 GHz) at 295 K. Model of the process was suggested using the analysis of kinetics of photo-responses decay, and it allowed determination of rate constant of recombination of free electrons and holes in cadmium selenide - (4-6)x10 -11 cm 3 s -1 [ru

  19. Low energy electron stimulated desorption from DNA films dosed with oxygen

    Energy Technology Data Exchange (ETDEWEB)

    Mirsaleh-Kohan, Nasrin; Bass, Andrew D.; Cloutier, Pierre; Massey, Sylvain; Sanche, Leon [Groupe en sciences des radiations, Faculte de medecine et des sciences de la sante, Universite de Sherbrooke, Sherbrooke, Quebec J1H 5N4 (Canada)

    2012-06-21

    Desorption of anions stimulated by 1-18 eV electron impact on self-assembled monolayer (SAM) films of single DNA strands is measured as a function of film temperature (50-250 K). The SAMs, composed of 10 nucleotides, are dosed with O{sub 2}. The OH{sup -} desorption yields increase markedly with exposure to O{sub 2} at 50 K and are further enhanced upon heating. In contrast, the desorption yields of O{sup -}, attributable to dissociative electron attachment to trapped O{sub 2} molecules decrease with heating. Irradiation of the DNA films prior to the deposition of O{sub 2} shows that this surprising increase in OH{sup -} desorption, at elevated temperatures, arises from the reaction of O{sub 2} with damaged DNA sites. These results thus appear to be a manifestation of the so-called 'oxygen fixation' effect, well known in radiobiology.

  20. Quantum-classical transition in the electron dynamics of thin metal films

    Energy Technology Data Exchange (ETDEWEB)

    Jasiak, R; Manfredi, G; Hervieux, P-A [Institut de Physique et Chimie des Materiaux, CNRS and Universite de Strasbourg, BP 43, F-67034 Strasbourg (France); Haefele, M [INRIA Nancy Grand-Est and Institut de Recherche en Mathematiques Avancees, 7 rue Rene Descartes, F-67084 Strasbourg (France)], E-mail: Giovanni.Manfredi@ipcms.u-strasbg.fr

    2009-06-15

    The quantum electrons dynamics in a thin metal film is studied numerically using the self-consistent Wigner-Poisson equations. The initial equilibrium is computed from the Kohn-Sham equations at finite temperature, and then mapped into the phase-space Wigner function. The time-dependent results are compared systematically with those obtained previously with a classical approach (Vlasov-Poisson equations). It is found that, for large excitations, the quantum and classical dynamics display the same low-frequency oscillations due to ballistic electrons bouncing back and forth on the film surfaces. However, below a certain excitation energy (roughly corresponding to one quantum of plasmon energy {Dirac_h}{omega}{sub p}), the quantum and classical results diverge, and the ballistic oscillations are no longer observed. These results provide an example of a quantum-classical transition that may be observed with current pump-probe experiments on thin metal films.

  1. Quantum-classical transition in the electron dynamics of thin metal films

    International Nuclear Information System (INIS)

    Jasiak, R; Manfredi, G; Hervieux, P-A; Haefele, M

    2009-01-01

    The quantum electrons dynamics in a thin metal film is studied numerically using the self-consistent Wigner-Poisson equations. The initial equilibrium is computed from the Kohn-Sham equations at finite temperature, and then mapped into the phase-space Wigner function. The time-dependent results are compared systematically with those obtained previously with a classical approach (Vlasov-Poisson equations). It is found that, for large excitations, the quantum and classical dynamics display the same low-frequency oscillations due to ballistic electrons bouncing back and forth on the film surfaces. However, below a certain excitation energy (roughly corresponding to one quantum of plasmon energy ℎω p ), the quantum and classical results diverge, and the ballistic oscillations are no longer observed. These results provide an example of a quantum-classical transition that may be observed with current pump-probe experiments on thin metal films.

  2. Characteristic electron energy loss in lanthanum films adsorbed on tungsten (110) single crystal

    International Nuclear Information System (INIS)

    Gorodetskij, D.A.; Gorchinskij, A.D.; Kobylyanskij, A.V.

    1988-01-01

    The spectrum of electron energy loss (ELS) in a wide range of energy loss 0-150 eV has been studied for La films adsorbed on W(110) single crystal with the coverage Θ from submonolayer to a few monolayers. The concentration dependence of loss energy peaks amplitude of different nature has been studied for the adsorption of rare earth element on refractory substrate. It has been shown that the essential information for the interpretation of the energy loss nature may be obtained by the investigation of such dependences for La adsorption on W(110). It is found that the surface and bulk plasmons peaks appear in ELS of La-W(110) system before the completion of the physical monolayer. Thus, the collectivization of valence electrons in the rare earth element film at the transition metal surface ensues for the submonolayer coverage like in the case of collective processes in alkali and alkaline earth element films

  3. Percolation model for electron conduction in films of metal nanoparticles linked by organic molecules

    International Nuclear Information System (INIS)

    Muller, K.H.; Herrmann, J.; Raguse, B.; Baxter, G.; Reda, T.

    2002-01-01

    Full text: We have investigated theoretically and experimentally the temperature dependence of the conductance of films of Au nanoparticles linked by alkane dithiol molecules in the temperature range between 5 K and 300 K. Conduction in these films is due to tunneling of single electrons between neighbouring metal nanoparticles. During tunnelling an electron has to overcome the Coulomb charging energy. We find that the observed temperature dependence of the conductance is non-Arrhenius like and can be described in terms of a percolation theory which takes account of disorder in the system. Disorder in our nanoparticle films is caused by variations in the nanoparticle size, fluctuations in the separation gaps between adjacent nanoparticles and by offset charges. To explain in detail our experimental data, a wide distribution of separation gaps and charging energies is needed. We find that a wide Coulomb charging energy distribution can arise from random offset charges even if the nanoparticle size distribution is narrow

  4. Implementation of Carbon Thin Film Coatings in the Super Proton Synchrotron (SPS) for Electron Cloud Mitigation

    CERN Document Server

    Costa Pinto, P; Basso, T; Edwards, P; Mensi, M; Sublet, A; Taborelli, M

    2014-01-01

    Low Secondary Electron Yield (SEY) carbon thin films eradicate electron multipacting in accelerator beam pipes. Two magnetic cells of the SPS were coated with such material and installed. In total more than forty vacuum vessels and magnet interconnections were treated. The feasibility of the coating process was validated. The performance of the carbon thin film will be tested with LHC nominal beams after the end of the long shutdown 1. Particular attention will be drawn to the long term behaviour. This paper presents the sputtering techniques used to coat the different components; their characterization (SEY measurements on coupons, RF multipacting tests and pump down curves); and the technology to etch the carbon film in case of a faulty coating. The strategy to coat the entire SPS will also be described.

  5. Effects of thickness on electronic structure of titanium thin films

    Indian Academy of Sciences (India)

    using near-edge X-ray absorption fine structure (NEXAFS) technique at titanium L2,3 edge in total electron yield .... the contribution of titanium L2,3 levels to the absorption co- ... all absorption coefficient of a sample is related to the atomic.

  6. Secondary electron emission yield on poled silica based thick films

    DEFF Research Database (Denmark)

    Braga, D.; Poumellec, B.; Cannas, V.

    2004-01-01

    Studies on the distribution of the electric field produced by a thermal poling process in a layer of Ge-doped silica on silicon substrate, by using secondary electron emission yield (SEEY) measurements () are presented. Comparing 0 between poled and unpoled areas, the SEEY at the origin of electr...

  7. Perturbation of the Electron Transport Mechanism by Proton Intercalation in Nanoporous TiO2 Films

    Energy Technology Data Exchange (ETDEWEB)

    Halverson, A. F.; Zhu, K.; Erslev, P. T.; Kim, J. Y.; Neale, N. R.; Frank, A. J.

    2012-04-11

    This study addresses a long-standing controversy about the electron-transport mechanism in porous metal oxide semiconductor films that are commonly used in dye-sensitized solar cells and related systems. We investigated, by temperature-dependent time-of-flight measurements, the influence of proton intercalation on the electron-transport properties of nanoporous TiO{sub 2} films exposed to an ethanol electrolyte containing different percentages of water (0-10%). These measurements revealed that increasing the water content in the electrolyte led to increased proton intercalation into the TiO{sub 2} films, slower transport, and a dramatic change in the dependence of the thermal activation energy (E{sub a}) of the electron diffusion coefficient on the photogenerated electron density in the films. Random walk simulations based on a microscopic model incorporating exponential conduction band tail (CBT) trap states combined with a proton-induced shallow trap level with a long residence time accounted for the observed effects of proton intercalation on E{sub a}. Application of this model to the experimental results explains the conditions under which E{sub a} dependence on the photoelectron density is consistent with multiple trapping in exponential CBT states and under which it appears at variance with this model.

  8. Electron transport in disordered films of metal nanoparticles linked by organic molecules

    International Nuclear Information System (INIS)

    Mueller, K.H.; Wei, G.; Herrmann, J.; Raguse, B.; Baxter, G.

    2004-01-01

    Full text: We have investigated theoretically and experimentally the mechanism of electron transport in films made of ∼10 nm sized gold nanoparticles linked by alkanedithiol molecules. Conduction in these films is due to linker-molecule assisted single-electron tunnelling between neighbouring nanoparticles where electrons have to overcome the Coulomb blockade energy. Strong disorder in our films in the form of separation gap fluctuations between adjacent nanoparticles and variations in Coulomb blockade energies cause electron current percolation. We have found that the dependence of the conduction on the length of the alkanedithiol molecules is affected by the degree of disorder. In addition, we have observed that percolation leads to a non-Arrhenius-like temperature dependence of the conduction and to a film-thickness dependent conductivity. I-V characteristics at low temperatures reveal Coulomb blockade effects. The strong dependence of the electrical conduction on the separation gaps between adjacent nanoparticles can be utilized in strain gauge and gas sensor applications

  9. A study on the microstructural parameters of 550 keV electron irradiated Lexan polymer films

    International Nuclear Information System (INIS)

    Hareesh, K.; Pramod, R.; Petwal, V. C.; Dwivedi, Jishnu; Sangappa; Sanjeev, Ganesh

    2012-01-01

    Lexan polymer films irradiated with 550 keV Electron Beam (EB) were characterized using Wide Angle Xray Scattering (WAXS) data to study the microstructural parameters. The crystal imperfection parameters like crystal size , lattice strain (g in %) and enthalpy (α) have been determined by Line Profile Analysis (LPA) using Fourier method of Warren.

  10. Complex composition film condensation in the sluice device of an electron microscope

    International Nuclear Information System (INIS)

    Kukuev, V.I.; Lesovoj, M.V.; Vlasov, D.A.; Malygin, M.V.; Domashevskaya, Eh.P.; Tomashpol'skij, Yu.Ya.

    1994-01-01

    Based on the sluice device of an electron microscope a system is developed for material laser evaporation and vapor condensation on a substrate, situated in the microscope specimen holder. Substrate heating by laser radiation to 100 deg C is used. The system is applied for investigating growth of high-temperature superconductor films

  11. Going Gluten-Free: Life with Celiac Disease

    Science.gov (United States)

    ... diagnose it. Diagnosis can often be difficult, as celiac disease symptoms are often similar to those of other conditions. ... of Diabetes and Digestive and Kidney Diseases (NIDDK) Celiac Disease or Gluten Sensitivity? Some of the symptoms of gluten sensitivity (also known as gluten intolerance) ...

  12. Effect of pentosans on gluten formation and properties.

    NARCIS (Netherlands)

    Wang, M.

    2003-01-01

    Keywords: pentosans, gluten yield, gluten properties, glutenin macropolymerThe gluten protein polymeric network plays a pivotal role in determining the end-use quality of wheat in many food products. The properties of this polymeric network are strongly affected by wheat flour

  13. Gluten: a two-edged sword. Immunopathogenesis of celiac disease

    NARCIS (Netherlands)

    Koning, de F.; Gilissen, L.J.W.J.; Wijmenga, C.

    2005-01-01

    Celiac disease (CD) is a small intestinal disorder caused by adaptive and innate immune responses triggered by the gluten proteins present in wheat. In the intestine, gluten is partially degraded and modified, which results in gluten peptides that bind with high affinity to HLA-DQ2 or HLA-DQ8 and

  14. Optical and electronic properties of HWCVD and PECVD silicon films irradiated using excimer and Nd:Yag lasers

    International Nuclear Information System (INIS)

    Shaikh, M.Z.; O'Neill, K.A.; Anthony, S.; Persheyev, S.K.; Rose, M.J.

    2006-01-01

    Thin silicon film samples were deposited using HWCVD and PECVD techniques to study the influence of laser annealing on their optical and electronic properties. Samples were annealed in air using a XeCl excimer and Nd:Yag lasers. Excimer laser annealing (ELA) at 50 to 222 mJ/cm 2 increased conductivity in PECVD films by 2 to 3 orders of magnitude and in HWCVD films by 1 to 2 orders of magnitude. ELA was also seen to decrease the optical gap in PECVD films by 0.5 eV and HWCVD films by 0.15 eV. Silicon-oxygen bond content was higher in as-deposited HWCVD films than PECVD films. Hydrogen content (at.%) in PECVD films was higher than HWCVD for higher H dilution ratios. A Nd:Yag laser 3-beam interference pattern was used to produce a periodic array of crystals in both PECVD and HWCVD films

  15. Electron magnetic chiral dichroism in CrO2 thin films using monochromatic probe illumination in a transmission electron microscope

    International Nuclear Information System (INIS)

    Loukya, B.; Zhang, X.; Gupta, A.; Datta, R.

    2012-01-01

    Electron magnetic chiral dichroism (EMCD) has been studied in CrO 2 thin films (with (100) and (110) growth orientations on TiO 2 substrates) using a gun monochromator in an aberration corrected transmission electron microscope operating at 300 kV. Excellent signal-to-noise ratio is obtained at spatial resolution ∼10 nm using a monochromatic probe as compared to conventional parallel illumination, large area convergent beam electron diffraction and scanning transmission electron microscopy techniques of EMCD. Relatively rapid exposure using mono probe illumination enables collection of EMCD spectra in total of 8–9 min in energy filtered imaging mode for a given Cr L 2,3 energy scan (energy range ∼35 eV). We compared the EMCD signal obtained by extracting the Cr L 2,3 spectra under three beam diffraction geometry of two different reciprocal vectors (namely g=110 and 200) and found that the g=200 vector enables acquisition of excellent EMCD signal from relatively thicker specimen area due to the associated larger extinction distance. Orbital to spin moment ratio has been calculated using EMCD sum rules for 3d elements and dichroic spectral features associated with CrO 2 are compared and discussed with XMCD theoretical spectra. - Highlights: ► Electron magnetic circular dichroism (EMCD) of CrO 2 thin film with two different orientations. ► Improved EMCD signal with Gun monochromator illumination. ► Improved EMCD signal with higher g vector.

  16. Chemical and Electronic Structure Studies of Refractory and Dielectric Thin Films.

    Science.gov (United States)

    Corneille, Jason Stephen

    This study presents the synthesis and characterization of oxide and refractory thin films under varying conditions. The deposition of the thin films is performed under vacuum conditions. The characterization of the growth, as well as the chemical and electronic properties of the thin films was accomplished using a broad array of surface analytical techniques. These model studies describe the relationship between the preparative processes and the stoichiometry, structure and electronic properties of the film products. From these efforts, the optimal deposition conditions for the production of high quality films have been established. The thin film oxides synthesized and studied here include magnesium oxide, silicon oxide and iron oxide. These oxides were synthesized on a refractory substrate using both post oxidation of thin films as well as reactive vapor deposition of the metals in the presence of an oxygen background. Comparisons and contrasts are presented for the various systems. Metallic magnesium films were grown and characterized as a preliminary study to the synthesis of magnesium oxide. Magnesium oxide (MgO(100)) was synthesized on Mo(100) by evaporating magnesium at a rate of one monolayer per minute in an oxygen background pressure of 1 times 10 ^{-6} Torr at room temperature. The resulting film was found to exhibit spectroscopic characteristics quite similar to those observed for bulk MgO. The acid/base characteristics of the films were studied using carbon monoxide, water and methanol as probe molecules. The film was found to exhibit essentially the same chemical properties as found in analogous powdered catalysts. Silicon dioxide was synthesized by evaporating silicon onto Mo(100) in an oxygen ambient. It is shown that the silicon oxide prepared at room temperature with a silicon deposition rate of {~ }{1.2}A/min and an oxygen pressure of 2 times 10^{ -8} Torr, consisted of predominantly silicon dioxide with a small fraction of suboxides. Annealing to

  17. Diagnosis of gluten related disorders: Celiac disease, wheat allergy and non-celiac gluten sensitivity.

    Science.gov (United States)

    Elli, Luca; Branchi, Federica; Tomba, Carolina; Villalta, Danilo; Norsa, Lorenzo; Ferretti, Francesca; Roncoroni, Leda; Bardella, Maria Teresa

    2015-06-21

    Cereal crops and cereal consumption have had a vital role in Mankind's history. In the recent years gluten ingestion has been linked with a range of clinical disorders. Gluten-related disorders have gradually emerged as an epidemiologically relevant phenomenon with an estimated global prevalence around 5%. Celiac disease, wheat allergy and non-celiac gluten sensitivity represent different gluten-related disorders. Similar clinical manifestations can be observed in these disorders, yet there are peculiar pathogenetic pathways involved in their development. Celiac disease and wheat allergy have been extensively studied, while non-celiac gluten sensitivity is a relatively novel clinical entity, believed to be closely related to other gastrointestinal functional syndromes. The diagnosis of celiac disease and wheat allergy is based on a combination of findings from the patient's clinical history and specific tests, including serology and duodenal biopsies in case of celiac disease, or laboratory and functional assays for wheat allergy. On the other hand, non-celiac gluten sensitivity is still mainly a diagnosis of exclusion, in the absence of clear-cut diagnostic criteria. A multimodal pragmatic approach combining findings from the clinical history, symptoms, serological and histological tests is required in order to reach an accurate diagnosis. A thorough knowledge of the differences and overlap in clinical presentation among gluten-related disorders, and between them and other gastrointestinal disorders, will help clinicians in the process of differential diagnosis.

  18. Diagnosis of gluten related disorders: Celiac disease, wheat allergy and non-celiac gluten sensitivity

    Science.gov (United States)

    Elli, Luca; Branchi, Federica; Tomba, Carolina; Villalta, Danilo; Norsa, Lorenzo; Ferretti, Francesca; Roncoroni, Leda; Bardella, Maria Teresa

    2015-01-01

    Cereal crops and cereal consumption have had a vital role in Mankind’s history. In the recent years gluten ingestion has been linked with a range of clinical disorders. Gluten-related disorders have gradually emerged as an epidemiologically relevant phenomenon with an estimated global prevalence around 5%. Celiac disease, wheat allergy and non-celiac gluten sensitivity represent different gluten-related disorders. Similar clinical manifestations can be observed in these disorders, yet there are peculiar pathogenetic pathways involved in their development. Celiac disease and wheat allergy have been extensively studied, while non-celiac gluten sensitivity is a relatively novel clinical entity, believed to be closely related to other gastrointestinal functional syndromes. The diagnosis of celiac disease and wheat allergy is based on a combination of findings from the patient’s clinical history and specific tests, including serology and duodenal biopsies in case of celiac disease, or laboratory and functional assays for wheat allergy. On the other hand, non-celiac gluten sensitivity is still mainly a diagnosis of exclusion, in the absence of clear-cut diagnostic criteria. A multimodal pragmatic approach combining findings from the clinical history, symptoms, serological and histological tests is required in order to reach an accurate diagnosis. A thorough knowledge of the differences and overlap in clinical presentation among gluten-related disorders, and between them and other gastrointestinal disorders, will help clinicians in the process of differential diagnosis. PMID:26109797

  19. Effect of gluten free diet on immune response to gliadin in patients with non-celiac gluten sensitivity.

    Science.gov (United States)

    Caio, Giacomo; Volta, Umberto; Tovoli, Francesco; De Giorgio, Roberto

    2014-02-13

    Non-celiac gluten sensitivity is a syndrome characterized by gastrointestinal and extra-intestinal symptoms occurring in a few hours/days after gluten and/or other wheat protein ingestion and rapidly improving after exclusion of potential dietary triggers. There are no established laboratory markers for non-celiac gluten sensitivity, although a high prevalence of first generation anti-gliadin antibodies of IgG class has been reported in this condition. This study was designed to characterize the effect of the gluten-free diet on anti-gliadin antibodies of IgG class in patients with non-celiac gluten sensitivity. Anti-gliadin antibodies of both IgG and IgA classes were assayed by ELISA in 44 non-celiac gluten sensitivity and 40 celiac disease patients after 6 months of gluten-free diet. The majority of non-celiac gluten sensitivity patients (93.2%) showed the disappearance of anti-gliadin antibodies of IgG class after 6 months of gluten-free diet; in contrast, 16/40 (40%) of celiac patients displayed the persistence of these antibodies after gluten withdrawal. In non-celiac gluten sensitivity patients anti-gliadin antibodies IgG persistence after gluten withdrawal was significantly correlated with the low compliance to gluten-free diet and a mild clinical response. Anti-gliadin antibodies of the IgG class disappear in patients with non-celiac gluten sensitivity reflecting a strict compliance to the gluten-free diet and a good clinical response to gluten withdrawal.

  20. Preparation of the Crosslinked Polyethersulfone Films by High Temperature Electron-Beam Irradiation

    International Nuclear Information System (INIS)

    Li, J.

    2006-01-01

    The aromatic polymers, mainly so called engineering plastics, were famed for the good stability under irradiation. However, high temperature irradiation of the aromatic polymers can result the crosslinked structure, due to the improved molecular mobility. Polyethersulfone (PES) is a wide used engineering plastic because of the high performance and high thermal stability. PES films were irradiated by electron-beam under nitrogen atmosphere above the glass transition temperature and then the covalently crosslinked PES (RX-PES) films were obtained. The irradiations were also performed at ambient temperature for comparison. The network structure formation of the RX-PES films was confirmed by the appearance of the gel, which were measured by soaking the irradiated PES films in the N,N-dimethylformamide (DMF) at room temperature. When the PES films were irradiated to 300 kGy, there was gel appeared. The gel percent increased with the increasing in the absorbed dose, and saturated when the absorbed dose exceeded 1200 kGy. However, there was no gel formed for the PES films irradiated at ambient temperature even to 2250 kGy. The G(S) and G(X) were calculated according to the Y-crosslinking mechanism. The results values are consistent in error range. G(S) of 0.10 and G(X) of 0.23 were obtained. As calculated, almost all the macromolecular radicals produced by chain scission were used for crosslinking. Also, the glass transition temperature of the RX-PES films increased with the increasing in the absorbed doses, while the glass transition temperature of the PES films irradiated at ambient temperature decreased with the increasing in the absorbed doses. The blending films of the PES with FEP or ETFE were prepared and the high temperature irradiation effects were also studies

  1. [Nutritional assessment of gluten-free diet. Is gluten-free diet deficient in some nutrient?].

    Science.gov (United States)

    Salazar Quero, J C; Espín Jaime, B; Rodríguez Martínez, A; Argüelles Martín, F; García Jiménez, R; Rubio Murillo, M; Pizarro Martín, A

    2015-07-01

    The gluten-free diet has traditionally been accepted as a healthy diet, but there are articles advocating that it may have some nutritional deficiencies. The current study assesses whether there was any change in the contributions of calories, essential elements, proportion of fatty acids, vitamins, minerals and fiber in children who were diagnosed with celiac diseases, comparing the diet with gluten prior one year after diagnosis with the diet without gluten to the year of diagnosis. The level of clinical or analytical impact that nutritional deficits could have was also assessed. A prospective,descriptive, observational study in which information was collected from a dietary survey, anthropometric and analytical data at pre-diagnosis of celiac disease and following a gluten diet and one year after celiac disease diagnosis, under gluten-free diet. A total of 37 patients meet the study criteria. A decrease in the intake of saturated fatty acids was found, with an increase of monounsaturated fatty acids and an increase in the intake of phosphorus in the diet without gluten. A deficient intake of vitamin D was found in both diets. Clinically, at year of gluten-free diet there was an improvement in weight and size. Analytically, there was an improvement in hemoglobin, ferritin, vitamin D, and parathyroid hormone in plasma. The gluten-free diet has minimal deficiencies, similar to those present in the diet with gluten, with an improvement in the lipid profile by increasing the proportion of monounsaturated fatty acids to the detriment of saturated fatty acids. Copyright © 2014 Asociación Española de Pediatría. Published by Elsevier España, S.L.U. All rights reserved.

  2. Evaluation of lens dose from anterior electron beams: comparison of Pinnacle and Gafchromic EBT3 film.

    Science.gov (United States)

    Sonier, Marcus; Wronski, Matt; Yeboah, Collins

    2015-03-08

    Lens dose is a concern during the treatment of facial lesions with anterior electron beams. Lead shielding is routinely employed to reduce lens dose and minimize late complications. The purpose of this work is twofold: 1) to measure dose pro-files under large-area lead shielding at the lens depth for clinical electron energies via film dosimetry; and 2) to assess the accuracy of the Pinnacle treatment planning system in calculating doses under lead shields. First, to simulate the clinical geometry, EBT3 film and 4 cm wide lead shields were incorporated into a Solid Water phantom. With the lead shield inside the phantom, the film was positioned at a depth of 0.7 cm below the lead, while a variable thickness of solid water, simulating bolus, was placed on top. This geometry was reproduced in Pinnacle to calculate dose profiles using the pencil beam electron algorithm. The measured and calculated dose profiles were normalized to the central-axis dose maximum in a homogeneous phantom with no lead shielding. The resulting measured profiles, functions of bolus thickness and incident electron energy, can be used to estimate the lens dose under various clinical scenarios. These profiles showed a minimum lead margin of 0.5 cm beyond the lens boundary is required to shield the lens to ≤ 10% of the dose maximum. Comparisons with Pinnacle showed a consistent overestimation of dose under the lead shield with discrepancies of ~ 25% occur-ring near the shield edge. This discrepancy was found to increase with electron energy and bolus thickness and decrease with distance from the lead edge. Thus, the Pinnacle electron algorithm is not recommended for estimating lens dose in this situation. The film measurements, however, allow for a reasonable estimate of lens dose from electron beams and for clinicians to assess the lead margin required to reduce the lens dose to an acceptable level.

  3. Electronic structure analysis of GaN films grown on r- and a-plane sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Monu; Krishna TC, Shibin; Aggarwal, Neha [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Vihari, Saket [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Gupta, Govind, E-mail: govind@nplindia.org [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India)

    2015-10-05

    Graphical abstract: Substrate orientation induced changes in surface chemistry, band bending, hybridization states, electronic properties and surface morphology of epitaxially grown GaN were investigated via photoemission spectroscopic and Atomic Force Microscopic measurements. - Highlights: • Electronic structure and surface properties of GaN film grown on r/a-plane sapphire. • Downward band bending (0.5 eV) and high surface oxide is observed for GaN/a-sapphire. • Electron affinity and ionization energy is found to be higher for GaN/a-sapphire. - Abstract: The electronic structure and surface properties of epitaxial GaN films grown on r- and a-plane sapphire substrates were probed via spectroscopic and microscopic measurements. X-ray photoemission spectroscopic (XPS) measurements were performed to analyse the surface chemistry, band bending and valence band hybridization states. It was observed that GaN/a-sapphire display a downward band bending of 0.5 eV and possess higher amount of surface oxide compared to GaN/r-sapphire. The valence band (VB) investigation revealed that the hybridization corresponds to the interactions of Ga 4s and Ga 4p orbitals with N 2p orbital, and result in N2p–Ga4p, N2p–Ga4s{sup ∗}, mixed and N2p–Ga4s states. The energy band structure and electronic properties were measured via ultraviolet photoemission spectroscopic (UPS) experiments. The band structure analysis and electronic properties calculations divulged that the electron affinity and ionization energy of GaN/a-sapphire were 0.3 eV higher than GaN/r-sapphire film. Atomic Force Microscopic (AFM) measurements revealed faceted morphology of GaN/r-sapphire while a smooth pitted surface was observed for GaN/a-sapphire film, which is closely related to surface oxide coverage.

  4. Strain Effect on Electronic Structure and Work Function in α-Fe2O3 Films

    Directory of Open Access Journals (Sweden)

    Li Chen

    2017-03-01

    Full Text Available We investigate the electronic structure and work function modulation of α-Fe2O3 films by strain based on the density functional method. We find that the band gap of clean α-Fe2O3 films is a function of the strain and is influenced significantly by the element termination on the surface. The px and py orbitals keep close to Fermi level and account for a pronounced narrowing band gap under compressive strain, while unoccupied dz2 orbitals from conduction band minimum draw nearer to Fermi level and are responsible for the pronounced narrowing band gap under tensile strain. The spin polarized surface state, arising from localized dangling-bond states, is insensitive to strain, while the bulk band, especially for pz orbital, arising from extended Bloch states, is very sensitive to strain, which plays an important role for work function decreasing (increasing under compressive (tensile strain in Fe termination films. In particular, the work function in O terminated films is insensitive to strain because pz orbitals are less sensitive to strain than that of Fe termination films. Our findings confirm that the strain is an effective means to manipulate electronic structures and corrosion potential.

  5. Confocal fluorescence microscopy investigation of visible emitting defects induced by electron beam lithography in LIF films

    International Nuclear Information System (INIS)

    Montereali, R. M.; Bigotta, S.; Pace, A.; Piccinini, M.; Burattini, E.; Grilli, A.; Raco, A.; Giammatteo, M.; L'Aquila Univ., L'Aquila; Picozzi, P.; Santucci, S.; L'Aquila Univ., L'Aquila

    2000-01-01

    Low energy electron irradiation of lithium fluoride (LiF), in the form of bulk crystals and films, gives rise to the stable formation of primary F defects and aggregated color centers in a thin layer located at the surface of the investigated material. For the first time a confocal light scanning microscope (CLSM) in fluorescence mode was used to reconstruct the depth distribution of efficiently emitting laser active color centers in a stripe-like region induced by 12 and 16 keV electrons on LiF films thermally evaporated on glass. The formation of the F3+ and F2 aggregated defects appears restricted to the electron penetration and proportional to their energy depth profile, as obtained from Monte Carlo simulations [it

  6. Electronic structure and local distortions in epitaxial ScGaN films

    International Nuclear Information System (INIS)

    Knoll, S M; Zhang, S; Rovezzi, M; Joyce, T B; Moram, M A

    2014-01-01

    High energy resolution fluorescence-detected x-ray absorption spectroscopy and density functional theory calculations were used to investigate the local bonding and electronic structure of Sc in epitaxial wurtzite-structure Sc x Ga 1−x N films with x ≤ 0.059. Sc atoms are found to substitute for Ga atoms, accompanied by a local distortion involving an increase in the internal lattice parameter u around the Sc atoms. The local bonding and electronic structure at Sc are not affected strongly by the strain state or the defect microstructure of the films. These data are consistent with theoretical predictions regarding the electronic structure of dilute Sc x Ga 1−x N alloys. (paper)

  7. Electromagnetic microwaves in metal films with electron-phonon interaction and a dc magnetic field

    DEFF Research Database (Denmark)

    Hasselberg, L.E.

    1976-01-01

    A quantum-mechanical treatment of electromagnetic microwaves is performed for a metal film. The directions of the exterior ac and dc fields are taken to be arbitrary and boundary conditions for the electrons are assumed to be specular. The relation between the current and the electromagnetic field...... in the transmission spectrum can perhaps be obtained by assuming a finite Debye temperature and specular reflections of the electrons at the boundary surfaces. A sharp peak entirely caused by the finite electron-phonon interaction is also discussed....

  8. Electron irradiation effects in amorphous antimony thin films obtained by cluster-beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Fuchs, G.; Treilleux, M.; Santos Aires, F.; Cabaud, B.; Melinon, P.; Hoareau, A. (Lyon-1 Univ., 69 - Villeurbanne (France))

    1991-03-01

    In order to understand the differences existing between films obtained with a classical molecular beam deposition (MBD) and the new low-energy cluster beam deposition (LECBD), transmission electron microscopy has been used to characterize the first stages of antimony LECBD. Antimony deposits are discontinuous and amorphous up to 2 nm in thickness. They are formed with isolated amorphous antimony particles surrounded by an amorphous antimony oxide shell. Moreover, under electron beam exposure in the microscope, an amorphous-crystal transformation has been observed in the oxide shell. Electron irradiation induces the formation of a crystallized antimony oxide (Sb{sub 2}O{sub 3}) around the amorphous antimony core. (author).

  9. Interfacial and Thin Film Chemistry in Electron Device Fabrication

    Science.gov (United States)

    1992-01-01

    Chemistry During Electronic Processing" by Professor Richard Osgood, Jr.; "In Situ Optical Diagnostics of Semiconductors Prepared by Laser Chemical Processing...N(Igde Area Code) 22c OFF ft SYMBO. Professors Georee Flynn and Richard Os~ood I MSL DD Form 1473, JUN 86 Previous edotions are obsolete SECURITY...and D. L. Smith, Phys.I Rev. Lett. 62, 649 (1989). 19. E. A. Caridi, T. Y. Chang, K. W. Goossen and L. F. Eastman, AOLi Phvs. Tett. 56, 659 (1990). 1

  10. Impact of silver metallization and electron irradiation on the mechanical deformation of polyimide films

    Science.gov (United States)

    Muradov, A. D.; Mukashev, K. M.; Yar-Mukhamedova, G. Sh.; Korobova, N. E.

    2017-11-01

    The impact of silver metallization and electron irradiation on the physical and mechanical properties of polyimide films has been studied. The metal that impregnated the structure of the polyimide substrate was 1-5 μm. The surface coatings contained 80-97% of the relative silver mirror in the visible and infrared regions. Irradiation was performed at the ELU-6 linear accelerator with an average beam electron energy of 2 MeV, an integral current of up to 1000 μA, a pulse repetition rate of 200 Hz, and a pulse duration of 5 μs. The absorbed dose in the samples was 10, 20, 30, and 40 MGy. The samples were deformed at room temperature under uniaxial tension on an Instron 5982 universal testing system. The structural changes in the composite materials that result from the impact of the physical factors were studied using an X-ray diffractometer DRON-2M in air at 293 K using Cu K α radiation (λαCu = 1.5418 Å). A substantial growth of mechanical characteristics resulting from the film metallization, as compared to the pure film, was observed. The growth of the ultimate strength by Δσ = 105 MPa and the plasticity by Δɛ = 75% is connected with the characteristics of the change of structure of the metallized films and the chemical etching conditions. The electron irradiation of the metallized polyimide film worsens its elastic and strength characteristics due to the formation of new phases in the form of silver oxide in the coating. The concentration of these phases increased with increasing dose, which was also the result of the violation of the ordered material structure, namely, the rupture of polyimide macromolecule bonds and the formation of new phases of silver in the coating. A mathematical model was obtained that predicts the elastic properties of silver metallized polyimide films. This model agrees with the experimental data.

  11. Characterization of ITO/CdO/glass thin films evaporated by electron beam technique

    Directory of Open Access Journals (Sweden)

    Hussein Abdel-Hafez Mohamed and Hazem Mahmoud Ali

    2008-01-01

    Full Text Available A thin buffer layer of cadmium oxide (CdO was used to enhance the optical and electrical properties of indium tin oxide (ITO films prepared by an electron-beam evaporation technique. The effects of the thickness and heat treatment of the CdO layer on the structural, optical and electrical properties of ITO films were carried out. It was found that the CdO layer with a thickness of 25 nm results in an optimum transmittance of 70% in the visible region and an optimum resistivity of 5.1×10−3 Ω cm at room temperature. The effect of heat treatment on the CdO buffer layer with a thickness of 25 nm was considered to improve the optoelectronic properties of the formed ITO films. With increasing annealing temperature, the crystallinity of ITO films seemed to improve, enhancing some physical properties, such as film transmittance and conductivity. ITO films deposited onto a CdO buffer layer heated at 450 °C showed a maximum transmittance of 91% in the visible and near-infrared regions of the spectrum associated with the highest optical energy gap of 3.61 eV and electrical resistivity of 4.45×10−4 Ω cm at room temperature. Other optical parameters, such as refractive index, extinction coefficient, dielectric constant, dispersion energy, single effective oscillator energy, packing density and free carrier concentration, were also studied.

  12. Visible light active TiO2 films prepared by electron beam deposition of noble metals

    International Nuclear Information System (INIS)

    Hou Xinggang; Ma Jun; Liu Andong; Li Dejun; Huang Meidong; Deng Xiangyun

    2010-01-01

    TiO 2 films prepared by sol-gel method were modified by electron beam deposition of noble metals (Pt, Pd, and Ag). Effects of noble metals on the chemical and surface characteristics of the films were studied using XPS, TEM and UV-Vis spectroscopy techniques. Photocatalytic activity of modified TiO 2 films was evaluated by studying the degradation of methyl orange dye solution under visible light UV irradiation. The result of TEM reveals that most of the surface area of TiO 2 is covered by tiny particles of noble metals with diameter less than 1 nm. Broad red shift of UV-Visible absorption band of modified photocatalysts was observed. The catalytic degradation of methyl orange in aqueous solutions under visible light illumination demonstrates a significant enhancement of photocatalytic activity of these films compared with the un-loaded films. The photocatalytic efficiency of modified TiO 2 films by this method is affected by the concentration of impregnating solution.

  13. Electronic Tongue Based on Nanostructured Hybrid Films of Gold Nanoparticles and Phthalocyanines for Milk Analysis

    Directory of Open Access Journals (Sweden)

    Luiza A. Mercante

    2015-01-01

    Full Text Available The use of gold nanoparticles combined with other organic and inorganic materials for designing nanostructured films has demonstrated their versatility for various applications, including optoelectronic devices and chemical sensors. In this study, we reported the synthesis and characterization of gold nanoparticles stabilized with poly(allylamine hydrochloride (Au@PAH NPs, as well as the capability of this material to form multilayer Layer-by-Layer (LbL nanostructured films with metal tetrasulfonated phthalocyanines (MTsPc. Film growth was monitored by UV-Vis absorption spectroscopy, atomic force microscopy (AFM, and Fourier transform infrared spectroscopy (FTIR. Once LbL films have been applied as active layers in chemical sensors, Au@PAH/MTsPc and PAH/MTsPc LbL films were used in an electronic tongue system for milk analysis regarding fat content. The capacitance data were treated using Principal Component Analysis (PCA, revealing the role played by the gold nanoparticles on the LbL films electrical properties, enabling this kind of system to be used for analyzing complex matrices such as milk without any prior pretreatment.

  14. Effect of annealing on the structural properties of electron beam deposited CIGS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Venkatachalam, M. [Department of Electronics, Erode Arts College, Erode (India)], E-mail: prabhu7737@yahoo.com; Kannan, M.D.; Jayakumar, S.; Balasundaraprabhu, R. [Thin Film Center, PSG College of Technology, Coimbatore (India); Muthukumarasamy, N. [Department of Physics, Coimbatore Institute of Technology, Coimbatore (India)

    2008-08-30

    CIGS bulk compound of three different compositions CuIn{sub 0.85}Ga{sub 0.15}Se{sub 2}, CuIn{sub 0.80}Ga{sub 0.20}Se{sub 2} and CuIn{sub 0.75}Ga{sub 0.25}Se{sub 2} have been prepared by direct reaction of elemental copper, indium, gallium and selenium. CIGS thin films of the three compositions have been deposited onto glass and silicon substrates using the prepared bulk by electron beam deposition method. The structural properties of the deposited films have been studied using X-ray diffraction technique. The as-deposited CIGS films have been found to be amorphous in nature. To study the effect of annealing on the structural properties, the films have been annealed in vacuum of the order of 10{sup -5} Torr. The X-ray diffractograms of the annealed CIGS films exhibited peaks revealing that the annealed films are crystalline in nature with tetragonal chalcopyrite structure. The (112) peak corresponding to the chalcopyrite structure has been observed to be the dominating peak in all the annealed films. The position of the (112) peak and other peaks in the X-ray diffraction pattern has been observed to shift to higher values of 2{theta} with the increase of gallium concentration. The lattice parameter values 'a' and 'c' have been calculated and they are found to be dependent on the concentration of gallium in the films. The FWHM in the X-ray diffraction pattern is found to decrease with an increase in annealing temperature indicating that the crystalline nature of the CIGS improves with increase in annealing temperature. The films grown on silicon substrates have been found to be of better crystalline quality than those deposited on glass substrates. The micro structural parameters like grain size, dislocation density and strain have been evaluated. The chemical constituents present in the deposited CIGS films have been identified using energy dispersive X-ray analysis. The surface topographical study on the films has been performed by AFM. The

  15. [Benefits of gluten-free diet: myth or reality?].

    Science.gov (United States)

    Coattrenec, Yann; Harr, Thomas; Pichard, Claude; Nendaz, Mathieu

    2015-10-14

    Non celiac gluten sensitivity may explain digestive and general symptoms in patients without celiac disease but this recently described entity is controversial. The role of gluten in comparison to other nutriments such as saccharides and polyols (FODMAPs) remains debated. If a gluten-free diet is clearly indicated in celiac disease and wheat allergy, it remains debatable in non-celiac gluten sensitivity given weak and contradictory evidence. There is no strong evidence for a strict indication to a gluten-free diet in endocrinological, psychiatric, and rheumatologic diseases, or to improve performance in elite sports.

  16. Observation of Internal Photoinduced Electron and Hole Separation in Hybrid Two-Dimentional Perovskite Films.

    Science.gov (United States)

    Liu, Junxue; Leng, Jing; Wu, Kaifeng; Zhang, Jun; Jin, Shengye

    2017-02-01

    Two-dimensional (2D) organolead halide perovskites are promising for various optoelectronic applications. Here we report a unique spontaneous charge (electron/hole) separation property in multilayered (BA) 2 (MA) n-1 Pb n I 3n+1 (BA = CH 3 (CH 2 ) 3 NH 3 + , MA = CH 3 NH 3 + ) 2D perovskite films by studying the charge carrier dynamics using ultrafast transient absorption and photoluminescence spectroscopy. Surprisingly, the 2D perovskite films, although nominally prepared as "n = 4", are found to be mixture of multiple perovskite phases, with n = 2, 3, 4 and ≈ ∞, that naturally align in the order of n along the direction perpendicular to the substrate. Driven by the band alignment between 2D perovskites phases, we observe consecutive photoinduced electron transfer from small-n to large-n phases and hole transfer in the opposite direction on hundreds of picoseconds inside the 2D film of ∼358 nm thickness. This internal charge transfer efficiently separates electrons and holes to the upper and bottom surfaces of the films, which is a unique property beneficial for applications in photovoltaics and other optoelectronics devices.

  17. On the theory of inelastic scattering of slow electrons by surface excitations: 2. Thin film formalism

    International Nuclear Information System (INIS)

    Nkoma, J.S.

    1982-08-01

    A quantum-mechanical theory for the inelastic scattering of slow electrons (ISSE) by surface excitations in a thin film is developed. The scattered wave function inside the thin film is obtained by solving the inhomogeneous Schroedinger equation, and it is found to contain terms which show that the back scattered intensity is smaller than the forward scattered intensity. A scattering cross-section for forward scattering is derived and is found to be dependent on transmission factors, wavevectors and fluctuations of the scattering potential. (author)

  18. Electronic hybridisation implications for the damage-tolerance of thin film metallic glasses.

    Science.gov (United States)

    Schnabel, Volker; Jaya, B Nagamani; Köhler, Mathias; Music, Denis; Kirchlechner, Christoph; Dehm, Gerhard; Raabe, Dierk; Schneider, Jochen M

    2016-11-07

    A paramount challenge in materials science is to design damage-tolerant glasses. Poisson's ratio is commonly used as a criterion to gauge the brittle-ductile transition in glasses. However, our data, as well as results in the literature, are in conflict with the concept of Poisson's ratio serving as a universal parameter for fracture energy. Here, we identify the electronic structure fingerprint associated with damage tolerance in thin film metallic glasses. Our correlative theoretical and experimental data reveal that the fraction of bonds stemming from hybridised states compared to the overall bonding can be associated with damage tolerance in thin film metallic glasses.

  19. Structures and electronic properties of thin-films of polycyclic aromatic hydrocarbons

    International Nuclear Information System (INIS)

    Natsume, Yutaka; Minakata, Takashi; Aoyagi, Takeshi

    2009-01-01

    We report the fabrication and characterization of organic thin-film transistors (TFTs) using several polycyclic aromatic hydrocarbons (PAHs). Pentacene, ovalene, dibenzocoronene and hexabenzocoronene were deposited as organic semiconductors on silicon wafers with gold electrodes as the bottom-contact configuration of the TFTs. The pentacene TFT showed the highest field-effect mobility of more than 0.1 cm 2 /Vs in comparison with the other PAHs. The results clarified that the high field-effect mobility of the pentacene thin film is due to large grain size and intrinsic electronic properties

  20. DFT calculations on electronic properties of ZnO thin films deposited by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Cordeiro, J.M.; Reynoso, V.C.; Azevedo, D.H.M. [Universidade Estadual Paulista Julio de Mesquita Filho (UNESP), SP (Brazil)

    2016-07-01

    Full text: Introduction - Thin films of Zinc oxide (ZnO) has a wide range of technological applications, as transparent conducting electrodes in solar cells, flat panel displays, and sensors, for example. More recently applications in optoelectronics, like light emitter diodes and laser diodes, due to its large band gap, are been explored. Studies of ZnO thin films are important for these applications. Methodology - In this study thin films of ZnO have been deposited by spray pyrolysis on glass substrate. The films were characterized by XRD and UV-VIS techniques and the electronic properties as a function of the film thickness have been investigated by DFT calculations with B3LYP hybrid potential implemented in the CRYSTAL09 code. Results - The diffractograms obtained for the ZnO thin films as a function of the thickness are shown. The films exhibit a hexagonal wurtzite structure with preferred c-axis orientation in (002) direction of ZnO crystal. A quantum mechanical approach based on the periodic Density Functional Theory (DFT), with B3LYP hybrid potential was used to investigate the electronic structure of the films as a function of the thickness. The CRYSTAL09 code has been used for the calculations on the wurtzite hexagonal structure of ZnO - spatial group P63mc. For optimizing the geometry of the pure ZnO crystal, the experimental lattice parameters were got as follows: a= 0.325 nm, b= 0.325 nm, c= 0.5207 nm with c/a= 1.602. Considering to the calculations of the band structure, it is suggested that the semiconducting properties of ZnO arises from the overlapping of the 4s orbital of the conducting band of Zn and the 2p orbital of the top of valence band of O. Conclusions - The structure of ZnO thin film deposited on glass substrate present preferential orientation in (002) direction. Variation in the optical properties as a function of the film thickness was observed. The band gap energy was determined from optical analysis to be ∼ 3.27 eV. The refractive

  1. Electrical properties of irradiated PVA film by using ion/electron beam

    Science.gov (United States)

    Abdelrahman, M. M.; Osman, M.; Hashhash, A.

    2016-02-01

    Ion/electron beam bombardment has shown great potential for improving the surface properties of polymers. Low-energy charged (ion/electron) beam irradiation of polymers is a good technique to modify properties such as electrical conductivity, structural behavior, and their mechanical properties. This paper reports on the effect of nitrogen and electron beam irradiation on the electrical properties of polyvinyl alcohol (PVA) films. PVA films of 4 mm were exposed to a charged (ion/electron) beam for different treatment times (15, 30, and 60 minutes); the beam was produced from a dual beam source using nitrogen gas with the other ion/electron source parameters optimized. The dielectric loss tangent tan δ , electrical conductivity σ , and dielectric constant ɛ ^' } in the frequency range 100 Hz-100 kHz were measured at room temperature. The variation of dielectric constant and loss tangent as a function of frequency was also studied at room temperature. The dielectric constant was found to be strongly dependent on frequency for both ion and electron beam irradiation doses. The real (ɛ ^' }) and imaginary (ɛ ^' ' }) parts of the dielectric constant decreased with frequency for all irradiated and non-irradiated samples. The AC conductivity showed an increase with frequency for all samples under the influence of both ion and electron irradiation for different times. Photoluminescence (PL) spectral changes were also studied. The formation of clusters and defects (which serve as non-radiative centers on the polymer surface) is confirmed by the decrease in the PL intensity.

  2. Balancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors.

    Science.gov (United States)

    Yoo, Hocheon; Ghittorelli, Matteo; Lee, Dong-Kyu; Smits, Edsger C P; Gelinck, Gerwin H; Ahn, Hyungju; Lee, Han-Koo; Torricelli, Fabrizio; Kim, Jae-Joon

    2017-07-10

    Complementary organic electronics is a key enabling technology for the development of new applications including smart ubiquitous sensors, wearable electronics, and healthcare devices. High-performance, high-functionality and reliable complementary circuits require n- and p-type thin-film transistors with balanced characteristics. Recent advancements in ambipolar organic transistors in terms of semiconductor and device engineering demonstrate the great potential of this route but, unfortunately, the actual development of ambipolar organic complementary electronics is currently hampered by the uneven electron (n-type) and hole (p-type) conduction in ambipolar organic transistors. Here we show ambipolar organic thin-film transistors with balanced n-type and p-type operation. By manipulating air exposure and vacuum annealing conditions, we show that well-balanced electron and hole transport properties can be easily obtained. The method is used to control hole and electron conductions in split-gate transistors based on a solution-processed donor-acceptor semiconducting polymer. Complementary logic inverters with balanced charging and discharging characteristics are demonstrated. These findings may open up new opportunities for the rational design of complementary electronics based on ambipolar organic transistors.

  3. Electronic transport in mixed-phase hydrogenated amorphous/nanocrystalline silicon thin films

    Science.gov (United States)

    Wienkes, Lee Raymond

    Interest in mixed-phase silicon thin film materials, composed of an amorphous semiconductor matrix in which nanocrystalline inclusions are embedded, stems in part from potential technological applications, including photovoltaic and thin film transistor technologies. Conventional mixed-phase silicon films are produced in a single plasma reactor, where the conditions of the plasma must be precisely tuned, limiting the ability to adjust the film and nanoparticle parameters independently. The films presented in this thesis are deposited using a novel dual-plasma co-deposition approach in which the nanoparticles are produced separately in an upstream reactor and then injected into a secondary reactor where an amorphous silicon film is being grown. The degree of crystallinity and grain sizes of the films are evaluated using Raman spectroscopy and X-ray diffraction respectively. I describe detailed electronic measurements which reveal three distinct conduction mechanisms in n-type doped mixed-phase amorphous/nanocrystalline silicon thin films over a range of nanocrystallite concentrations and temperatures, covering the transition from fully amorphous to ~30% nanocrystalline. As the temperature is varied from 470 to 10 K, we observe activated conduction, multiphonon hopping (MPH) and Mott variable range hopping (VRH) as the nanocrystal content is increased. The transition from MPH to Mott-VRH hopping around 100K is ascribed to the freeze out of the phonon modes. A conduction model involving the parallel contributions of these three distinct conduction mechanisms is shown to describe both the conductivity and the reduced activation energy data to a high accuracy. Additional support is provided by measurements of thermal equilibration effects and noise spectroscopy, both done above room temperature (>300 K). This thesis provides a clear link between measurement and theory in these complex materials.

  4. Electron beam influence on the carbon contamination of electron irradiated hydroxyapatite thin films

    International Nuclear Information System (INIS)

    Hristu, Radu; Stanciu, Stefan G.; Tranca, Denis E.; Stanciu, George A.

    2015-01-01

    Highlights: • Carbon contamination mechanisms of electron-beam-irradiated hydroxyapatite. • Atomic force microscopy phase imaging used to detect carbon contamination. • Carbon contamination dependence on electron energy, irradiation time, beam current. • Simulation of backscattered electrons confirms the experimental results. - Abstract: Electron beam irradiation which is considered a reliable method for tailoring the surface charge of hydroxyapatite is hindered by carbon contamination. Separating the effects of the carbon contamination from those of irradiation-induced trapped charge is important for a wide range of biological applications. In this work we focus on the understanding of the electron-beam-induced carbon contamination with special emphasis on the influence of the electron irradiation parameters on this phenomenon. Phase imaging in atomic force microscopy is used to evaluate the influence of electron energy, beam current and irradiation time on the shape and size of the resulted contamination patterns. Different processes involved in the carbon contamination of hydroxyapatite are discussed

  5. Flexible Electronics Powered by Mixed Metal Oxide Thin Film Transistors

    Science.gov (United States)

    Marrs, Michael

    A low temperature amorphous oxide thin film transistor (TFT) and amorphous silicon PIN diode backplane technology for large area flexible digital x-ray detectors has been developed to create 7.9-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature (200 °C) metal oxide TFT and a-Si PIN photodiode process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication and assembly of the flexible detectors. Mixed oxide semiconductor TFTs on flexible plastic substrates suffer from performance and stability issues related to the maximum processing temperature limitation of the polymer. A novel device architecture based upon a dual active layer improves both the performance and stability. Devices are directly fabricated below 200 ºC on a polyethylene naphthalate (PEN) substrate using mixed metal oxides of either zinc indium oxide (ZIO) or indium gallium zinc oxide (IGZO) as the active semiconductor. The dual active layer architecture allows for adjustment to the saturation mobility and threshold voltage stability without the requirement of high temperature annealing, which is not compatible with flexible plastic substrates like PEN. The device performance and stability is strongly dependent upon the composition of the mixed metal oxide; this dependency provides a simple route to improving the threshold voltage stability and drive performance. By switching from a single to a dual active layer, the saturation mobility increases from 1.2 cm2/V-s to 18.0 cm2/V-s, while the rate of the threshold voltage shift decreases by an order of magnitude. This approach could assist in enabling the production of devices on flexible substrates using amorphous oxide semiconductors. Low temperature (200°C) processed amorphous silicon photodiodes were developed successfully by balancing the tradeoffs

  6. Tracing Single Electrons in a Disordered Polymer Film at Room Temperature.

    Science.gov (United States)

    Wilma, Kevin; Issac, Abey; Chen, Zhijian; Würthner, Frank; Hildner, Richard; Köhler, Jürgen

    2016-04-21

    The transport of charges lies at the heart of essentially all modern (opto-) electronic devices. Although inorganic semiconductors built the basis for current technologies, organic materials have become increasingly important in recent years. However, organic matter is often highly disordered, which directly impacts the charge carrier dynamics. To understand and optimize device performance, detailed knowledge of the transport mechanisms of charge carriers in disordered matter is therefore of crucial importance. Here we report on the observation of the motion of single electrons within a disordered polymer film at room temperature, using single organic chromophores as probe molecules. The migration of a single electron gives rise to a varying electric field in its vicinity, which is registered via a shift of the emission spectra (Stark shift) of a chromophore. The spectral shifts allow us to determine the electron mobility and reveal for each nanoenvironment a distinct number of different possible electron-transfer pathways within the rugged energy landscape of the disordered polymer matrix.

  7. Development of Micron-Resolved Electron Spectroscopy to Study Organic Thin Films in Real Devices

    International Nuclear Information System (INIS)

    Wang, C.-H.; Fan, L.-J.; Yang, Y.-W.; Su, J.-W.; Chan, S.-W.; Chen, M.-C.

    2010-01-01

    A straightforward application of an electron energy analyzer equipped with an image detector to micron-resolved electron spectroscopic studies of organic thin film devices is reported. The electron spectroscopies implemented include synchrotron-based UPS, XPS, and Auger yield NEXAFS. Along the non-energy-dispersion direction of the analyzer, a spatial resolution of ∼40 μm is obtained through the employment of entrance slits, electrostatic lenses and segmented CCD detector. One significant benefit offered by the technique is that the electronic transport and electronic structure of the same micron-sized sample can be directly examined. The example illustrated is a top-contact organic field effect transistor (OFET) fabricated from semiconducting triethylsilylethynyl anthradithiophene and gold electrodes. It is found that an extensive out-diffusion of gold atoms to adjacent conduction channels takes place, presumably due to the inability of soft organic materials in dissipating the excess energy with which gaseous Au atoms possess.

  8. Celiac Disease and Nonceliac Gluten Sensitivity: A Review.

    Science.gov (United States)

    Leonard, Maureen M; Sapone, Anna; Catassi, Carlo; Fasano, Alessio

    2017-08-15

    The prevalence of gluten-related disorders is rising, and increasing numbers of individuals are empirically trying a gluten-free diet for a variety of signs and symptoms. This review aims to present current evidence regarding screening, diagnosis, and treatment for celiac disease and nonceliac gluten sensitivity. Celiac disease is a gluten-induced immune-mediated enteropathy characterized by a specific genetic genotype (HLA-DQ2 and HLA-DQ8 genes) and autoantibodies (antitissue transglutaminase and antiendomysial). Although the inflammatory process specifically targets the intestinal mucosa, patients may present with gastrointestinal signs or symptoms, extraintestinal signs or symptoms, or both, suggesting that celiac disease is a systemic disease. Nonceliac gluten sensitivity is diagnosed in individuals who do not have celiac disease or wheat allergy but who have intestinal symptoms, extraintestinal symptoms, or both, related to ingestion of gluten-containing grains, with symptomatic improvement on their withdrawal. The clinical variability and the lack of validated biomarkers for nonceliac gluten sensitivity make establishing the prevalence, reaching a diagnosis, and further study of this condition difficult. Nevertheless, it is possible to differentiate specific gluten-related disorders from other conditions, based on currently available investigations and algorithms. Clinicians cannot distinguish between celiac disease and nonceliac gluten sensitivity by symptoms, as they are similar in both. Therefore, screening for celiac disease must occur before a gluten-free diet is implemented, since once a patient initiates a gluten-free diet, testing for celiac disease is no longer accurate. Celiac disease and nonceliac gluten sensitivity are common. Although both conditions are treated with a gluten-free diet, distinguishing between celiac disease and nonceliac gluten sensitivity is important for long-term therapy. Patients with celiac disease should be followed up

  9. Extraction of electron beam dose parameters from EBT2 film data scored in a mini phantom.

    Science.gov (United States)

    O'Reilly, Dedri; Smit, Cobus J L; du Plessis, Freek C P

    2013-09-01

    Quality assurance of medical linear accelerators includes dosimetric parameter measurement of therapeutic electron beams e.g. relative dose at a depth of 80% (R₈₀). This parameter must be within a tolerance of 0.2 cm of the declared value. Cumbersome water tank measurements can be regarded as a benchmark to measure electron depth dose curves. A mini-phantom was designed and built, in which a strip of GAFCHROMIC® EBT2 film could be encased tightly for electron beam depth dose measurement. Depth dose data were measured for an ELEKTA Sl25 MLC, ELEKTA Precise, and ELEKTA Synergy (Elekta Oncology Systems, Crawley, UK) machines. The electron beam energy range was between 4 and 22 MeV among the machines. A 10 × 10 cm² electron applicator with 95 cm source-surface-distance was used on all the machines. 24 h after irradiation, the EBT2 film strips were scanned on Canon CanoScan N670U scanner. Afterwards, the data were analysed with in-house developed software that entailed optical density to dose conversion, and optimal fitting of the PDD data to de-noise the raw data. From the PDD data R₈₀ values were solved for and compared with acceptance values. A series of tests were also carried out to validate the use of the scanner for film Dosimetry. These tests are presented in this study. It was found that this method of R₈₀ evaluation was reliable with good agreement with benchmark water tank measurements using a commercial parallel plate ionization chamber as the radiation detector. The EBT2 film data yielded R₈₀ values that were on average 0.06 cm different from benchmark water tank measured R₈₀ values.

  10. Pumping experiment of water on B and LaB6 films with electron beam evaporator

    International Nuclear Information System (INIS)

    Mori, Takahiro; Hanaoka, Yutaka; Akaishi, Kenya; Kubota, Yusuke; Motojima, Osamu; Mushiaki, Motoi; Funato, Yasuyuki.

    1992-10-01

    Pumping characteristics of water vapor on boron and lanthanum hexaboride films formed with an electron beam evaporator have been investigated in high vacuum of a pressure region between 10 -4 and 10 -3 Pa. Measured initial maximum pumping speeds of water for fresh B and LaB 6 films on substrates with a deposition amount from 2.3 x 10 21 to 6.7 x 10 21 molecules·m -2 are 3.2 ∼ 4.9 m 3 ·s -1 ·m -2 , and maximum saturation amounts of adsorbed water on these films are 2.9 x 10 20 ∼ 1.3 x 10 21 H 2 O molecules·m -2 . (author)

  11. Synthesis of nanoscale copper nitride thin film and modification of the surface under high electronic excitation.

    Science.gov (United States)

    Ghosh, S; Tripathi, A; Ganesan, V; Avasthi, D K

    2008-05-01

    Nanoscale (approximately 90 nm) Copper nitride (Cu3N) films are deposited on borosilicate glass and Si substrates by RF sputtering technique in the reactive environment of nitrogen gas. These films are irradiated with 200 MeV Au15+ ions from Pelletron accelerator in order to modify the surface by high electronic energy deposition of heavy ions. Due to irradiation (i) at incident ion fluence of 1 x 10(12) ions/cm2 enhancement of grains, (ii) at 5 x 10912) ions/cm2 mass transport on the films surface, (iii) at 2 x 10(13) ions/cm2 line-like features on Cu3N/glass and nanometallic structures on Cu3N/Si surface are observed. The surface morphology is examined by atomic force microscope (AFM). All results are explained on the basis of a thermal spike model of ion-solid interaction.

  12. Novel Luminescent Multilayer Films Containing π-Conjugated Anionic Polymer with Electronic Microenvironment

    Directory of Open Access Journals (Sweden)

    Tianlei Wang

    2016-09-01

    Full Text Available Layered double hydroxides (LDHs, luminescent π-conjugated anionic polymer and montmorillonite (MMT were orderly assembled into luminescent multilayer films via layer-by-layer self-assembly method. The electronic microenvironment (EME, the structure of which is like a traditional capacitor, can be constructed by exfoliated LDHs or MMT nanosheets. In addition, the rigid inorganic laminated configuration can offer stable surroundings between the interlayers. As a result, we conclude that EME can extend the luminescent lifespans of multilayer films substantially, due to affecting relaxation times of π-conjugated anionic polymer. Consequently, because of the remarkable impact on better photoemission behaviors of luminescent π-conjugated anionic polymer, EME assembled by LDHs or MMT nanosheets have had high hopes attached to them. They are expected to have the potential for designing, constructing, and investigating novel light-emitting thin films.

  13. Optical band gap of ZnO thin films deposited by electron beam evaporation

    International Nuclear Information System (INIS)

    Nadeem, M. Y.; Ali, S. L.; Wasiq, M. F.; Rana, A. M.

    2006-01-01

    Optical band gap of ZnO thin films deposited by electron beam evaporation at evaporation rates ranging 5 As/sup -1/ to 15 As /sup -1/ and thickness ranging 1000A to 3000A is presented. Deposited films were annealed at 573K for one and half hour. The variations in the optical band gap were observed and showed decreasing behavior from 3.15 eV, 3.05 eV, from 3.18 eV to 3.10 eV and from 3.19 eV to 3.18 eV for films with respective thickness 1000A, 2000 A, 3000 A on increasing the evaporation rate from 5 As/sup-1/ to As/sup -1/ by keeping thickness constant. (author)

  14. Electronic transport properties of nano-scale Si films: an ab initio study

    Science.gov (United States)

    Maassen, Jesse; Ke, Youqi; Zahid, Ferdows; Guo, Hong

    2010-03-01

    Using a recently developed first principles transport package, we study the electronic transport properties of Si films contacted to heavily doped n-type Si leads. The quantum transport analysis is carried out using density functional theory (DFT) combined with nonequilibrium Green's functions (NEGF). This particular combination of NEGF-DFT allows the investigation of Si films with thicknesses in the range of a few nanometers and lengths up to tens of nanometers. We calculate the conductance, the momentum resolved transmission, the potential profile and the screening length as a function of length, thickness, orientation and surface structure. Moreover, we compare the properties of Si films with and without a top surface passivation by hydrogen.

  15. Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance

    Science.gov (United States)

    Schnier, Tobias; Emara, Jennifer; Olthof, Selina; Meerholz, Klaus

    2017-01-01

    Hybrid organic/inorganic halide perovskites have lately been a topic of great interest in the field of solar cell applications, with the potential to achieve device efficiencies exceeding other thin film device technologies. Yet, large variations in device efficiency and basic physical properties are reported. This is due to unintentional variations during film processing, which have not been sufficiently investigated so far. We therefore conducted an extensive study of the morphology and electronic structure of a large number of CH3NH3PbI3 perovskite where we show how the preparation method as well as the mixing ratio of educts methylammonium iodide and lead(II) iodide impact properties like film formation, crystal structure, density of states, energy levels, and ultimately the solar cell performance. PMID:28287555

  16. Electron scattering at surfaces and grain boundaries in thin Au films

    International Nuclear Information System (INIS)

    Henriquez, Ricardo; Flores, Marcos; Moraga, Luis; Kremer, German; González-Fuentes, Claudio; Munoz, Raul C.

    2013-01-01

    The electron scattering at surfaces and grain boundaries is investigated using polycrystalline Au films deposited onto mica substrates. We vary the three length scales associated with: (i) electron scattering in the bulk, that at temperature T is characterized by the electronic mean free path in the bulk ℓ 0 (T); (ii) electron-surface scattering, that is characterized by the film thickness t; (iii) electron-grain boundary scattering, that is characterized by the mean grain diameter D. We varied independently the film thickness from approximately 50 nm to about 100 nm, and the typical grain size making up the samples from 12 nm to 160 nm. We also varied the scale of length associated with electron scattering in the bulk by measuring the resistivity of each specimen at temperatures T, 4 K 0 (T) by approximately 2 orders of magnitude. Detailed measurements of the grain size distribution as well as surface roughness of each sample were performed with a Scanning Tunnelling Microscope (STM). We compare, for the first time, theoretical predictions with resistivity data employing the two theories available that incorporate the effect of both electron-surface as well as electron-grain boundary scattering acting simultaneously: the theory of A.F. Mayadas and M. Shatzkes, Phys. Rev. 1 1382 (1970) (MS), and that of G. Palasantzas, Phys. Rev. B 58 9685 (1998). We eliminate adjustable parameters from the resistivity data analysis, by using as input the grain size distribution as well as the surface roughness measured with the STM on each sample. The outcome is that both theories provide a fair representation of both the temperature as well as the thickness dependence of the resistivity data, but yet there are marked differences between the resistivity predicted by these theories. In the case of the MS theory, when the average grain diameter D is significantly smaller than ℓ 0 (300) = 37 nm, the electron mean free path in the bulk at 300 K, the effect of electron

  17. Electron scattering at surfaces and grain boundaries in thin Au films

    Energy Technology Data Exchange (ETDEWEB)

    Henriquez, Ricardo [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Casilla 110-V, Valparaíso (Chile); Flores, Marcos; Moraga, Luis [Departamento de Física, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Blanco Encalada 2008, Casilla 487-3, Santiago 8370449 (Chile); Kremer, German [Bachillerato, Universidad de Chile, Las Palmeras 3425, Santiago 7800024 (Chile); González-Fuentes, Claudio [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Casilla 110-V, Valparaíso (Chile); Munoz, Raul C., E-mail: ramunoz@ing.uchile.cl [Departamento de Física, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Blanco Encalada 2008, Casilla 487-3, Santiago 8370449 (Chile)

    2013-05-15

    The electron scattering at surfaces and grain boundaries is investigated using polycrystalline Au films deposited onto mica substrates. We vary the three length scales associated with: (i) electron scattering in the bulk, that at temperature T is characterized by the electronic mean free path in the bulk ℓ{sub 0}(T); (ii) electron-surface scattering, that is characterized by the film thickness t; (iii) electron-grain boundary scattering, that is characterized by the mean grain diameter D. We varied independently the film thickness from approximately 50 nm to about 100 nm, and the typical grain size making up the samples from 12 nm to 160 nm. We also varied the scale of length associated with electron scattering in the bulk by measuring the resistivity of each specimen at temperatures T, 4 K < T < 300 K. Cooling the samples to 4 K increases ℓ{sub 0}(T) by approximately 2 orders of magnitude. Detailed measurements of the grain size distribution as well as surface roughness of each sample were performed with a Scanning Tunnelling Microscope (STM). We compare, for the first time, theoretical predictions with resistivity data employing the two theories available that incorporate the effect of both electron-surface as well as electron-grain boundary scattering acting simultaneously: the theory of A.F. Mayadas and M. Shatzkes, Phys. Rev. 1 1382 (1970) (MS), and that of G. Palasantzas, Phys. Rev. B 58 9685 (1998). We eliminate adjustable parameters from the resistivity data analysis, by using as input the grain size distribution as well as the surface roughness measured with the STM on each sample. The outcome is that both theories provide a fair representation of both the temperature as well as the thickness dependence of the resistivity data, but yet there are marked differences between the resistivity predicted by these theories. In the case of the MS theory, when the average grain diameter D is significantly smaller than ℓ{sub 0}(300) = 37 nm, the electron mean

  18. Electronic excitation induced modifications of optical and morphological properties of PCBM thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, T. [Department of Physics and Materials Research Centre, Malaviya National Institute of Technology, Jaipur 302017 (India); Singhal, R., E-mail: rsinghal.phy@mnit.ac.in [Department of Physics and Materials Research Centre, Malaviya National Institute of Technology, Jaipur 302017 (India); Vishnoi, R. [Department of Physics and Materials Research Centre, Malaviya National Institute of Technology, Jaipur 302017 (India); Department of Physics, Vardhman (P.G.) College, Bijnor 246701, U.P. (India); Sharma, P. [Department of Physics and Materials Research Centre, Malaviya National Institute of Technology, Jaipur 302017 (India); Patra, A.; Chand, S. [National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Lakshmi, G.B.V.S. [Inter University Accelerator Centre, Post Box No. 10502, New Delhi 110067 (India); Biswas, S.K. [Department of Metallurgical and Materials Engineering, Malaviya National Institute of Technology, Jaipur 302017 (India)

    2016-07-15

    Highlights: • Spin casted PCBM thin films are irradiated by 90 MeV Ni{sup 7+} ion beam. • The decrease in band gap was found after irradiation. • There is a decomposition of molecular bond due to ion irradiation. • Roughness is also found to be dependent on incident ion fluence. - Abstract: Phenyl C{sub 61} butyric acid methyl ester (PCBM) is a fullerene derivative and most commonly used in organic photovoltaic devices both as electron acceptor and transporting material due to high electron mobility. PCBM is easy to spin caste on some substrate as it is soluble in chlorobenzene. In this study, the spin coated thin films of PCBM (on two different substrate, glass and double sided silicon) were irradiated using 90 MeV Ni{sup 7+} swift heavy ion beam at low fluences ranging from 1 × 10{sup 9} to 1 × 10{sup 11} ions/cm{sup 2} to study the effect of ion beam irradiation. The pristine and irradiated PCBM thin films were characterized by UV–visible absorption spectroscopy and fourier transform infrared spectroscopy (FTIR) to investigate the optical properties before and after irradiation. These thin films were further analyzed using atomic force microscopy (AFM) to investigate the morphological modifications which are induced by energetic ions. The variation in optical band gap after irradiation was measured using Tauc’s relation from UV–visible absorption spectra. A considerable change was observed with increasing fluence in optical band gap of irradiated thin films of PCBM with respect to the pristine film. The decrease in FTIR band intensity of C{sub 60} cage reveals the polymerization reaction due to high energy ion impact. The roughness is also found to be dependent on incident fluences. This study throws light for the application of PCBM in organic solar cells in form of ion irradiation induced nanowires of PCBM for efficient charge carrier transportation in active layer.

  19. Conformable Skin-Like Conductive Thin Films with AgNWs Strips for Flexible Electronic Devices

    Directory of Open Access Journals (Sweden)

    Yuhang SUN

    2015-08-01

    Full Text Available Keeping good conductivity at high stretching strain is one of the main requirements for the fabrication of flexible electronic devices. The elastic nature of siloxane-based elastomers enables many innovative designs in wearable sensor devices and non-invasive insertion instruments, including skin-like tactile sensors. Over the last few years, polydimethylsiloxane (PDMS thin films have been widely used as the substrates in the fabrication of flexible electronic devices due to their good elasticity and outstanding biocompatibility. However, these kind of thin films usually suffer poor resistance to tearing and insufficient compliance to curved surfaces, which limits their applications. Currently no three-dimensionally mountable tactile sensor arrays have been reported commercially available. In this work, we developed a kind of mechanically compliant skin-like conductive thin film by patterning silver nano wire traces in strip-style on Dragon Skin® (DS substrates instead of PDMS. High cross- link quality was achieved then. To further improve the conductivity, a thin gold layer was coated onto the silver nanowires (AgNWs strips. Four different gold deposition routines have been designed and investigated by using different E-beam and spin coating processing methods. Owning to the intrinsically outstanding physical property of the Dragon Skin material and the uniform embedment built in the gold deposition processes, the DS/AgNWs thin films showed convincible advantages over PDMS/AgNWs thin films in both mechanical capability and conductive stability. Through experimental tests, the DS/AgNWs electrode thin films were proven to be able to maintain high conductivity following repeated linear deformations.

  20. APCVD hexagonal boron nitride thin films for passive near-junction thermal management of electronics

    Science.gov (United States)

    KC, Pratik; Rai, Amit; Ashton, Taylor S.; Moore, Arden L.

    2017-12-01

    The ability of graphene to serve as an ultrathin heat spreader has been previously demonstrated with impressive results. However, graphene is electrically conductive, making its use in contact with electronic devices problematic from a reliability and integration perspective. As an alternative, hexagonal boron nitride (h-BN) is a similarly structured material with large in-plane thermal conductivity but which possesses a wide band gap, thereby giving it potential to be utilized for directing contact, near-junction thermal management of electronics without shorting or the need for an insulating intermediate layer. In this work, the viability of using large area, continuous h-BN thin films as direct contact, near-junction heat spreaders for electronic devices is experimentally evaluated. Thin films of h-BN several square millimeters in size were synthesized via an atmospheric pressure chemical vapor deposition (APCVD) method that is both simple and scalable. These were subsequently transferred onto a microfabricated test device that simulated a multigate transistor while also allowing for measurements of the device temperature at various locations via precision resistance thermometry. Results showed that these large-area h-BN films with thicknesses of 77-125 nm are indeed capable of significantly lowering microdevice temperatures, with the best sample showing the presence of the h-BN thin film reduced the effective thermal resistance by 15.9% ± 4.6% compared to a bare microdevice at the same power density. Finally, finite element simulations of these experiments were utilized to estimate the thermal conductivity of the h-BN thin films and identify means by which further heat spreading performance gains could be attained.

  1. Active vacuum brazing of CNT films to metal substrates for superior electron field emission performance

    Science.gov (United States)

    Longtin, Rémi; Sanchez-Valencia, Juan Ramon; Shorubalko, Ivan; Furrer, Roman; Hack, Erwin; Elsener, Hansrudolf; Gröning, Oliver; Greenwood, Paul; Rupesinghe, Nalin; Teo, Kenneth; Leinenbach, Christian; Gröning, Pierangelo

    2015-02-01

    The joining of macroscopic films of vertically aligned multiwalled carbon nanotubes (CNTs) to titanium substrates is demonstrated by active vacuum brazing at 820 °C with a Ag-Cu-Ti alloy and at 880 °C with a Cu-Sn-Ti-Zr alloy. The brazing methodology was elaborated in order to enable the production of highly electrically and thermally conductive CNT/metal substrate contacts. The interfacial electrical resistances of the joints were measured to be as low as 0.35 Ω. The improved interfacial transport properties in the brazed films lead to superior electron field-emission properties when compared to the as-grown films. An emission current of 150 μA was drawn from the brazed nanotubes at an applied electric field of 0.6 V μm-1. The improvement in electron field-emission is mainly attributed to the reduction of the contact resistance between the nanotubes and the substrate. The joints have high re-melting temperatures up to the solidus temperatures of the alloys; far greater than what is achievable with standard solders, thus expanding the application potential of CNT films to high-current and high-power applications where substantial frictional or resistive heating is expected.

  2. Transport Properties of LCMO Granular Films Deposited by the Pulsed Electron Deposition Technique

    Institute of Scientific and Technical Information of China (English)

    CHEN Leiming; XU Bin; ZHANG Yan; CHEN Zhenping

    2011-01-01

    By finely controlling the deposition parameters in the pulsed electron deposition process,granular La2/3Ca1/3MnO3 (LCMO) film was grown on silicon substrates.The substrate temperature,ambient pressure in the deposition chamber and acceleration potential for the electron beam were all found to affect the grain size of the film,resulting in different morphologies of the samples.Transport properties of the obtained granular films,especially the magnetoresistance (MR),were studied.Prominent low-field MR was observed in all samples,indicating the forming of grain boundaries in the sample.The low-field MR show great sensitive to the morphology evolution,which reaches the highest value of about 40% for the sample with the grain size of about 250 nm.More interestingly,positive-MR (p-MR) was also detected above 300 K when low magnetic field applying,whereas it disappeared with higher magnetic field applied up to 1.5 and 2 Tesla.Instead of the spinpolarized tunneling process being commonly regarded as a responsible reason,lattice mismatch between LCMO film and silicon substrate appears to be the origin of the p-MR

  3. Thick-Film and LTCC Passive Components for High-Temperature Electronics

    Directory of Open Access Journals (Sweden)

    A. Dziedzic

    2013-04-01

    Full Text Available At this very moment an increasing interest in the field of high-temperature electronics is observed. This is a result of development in the area of wide-band semiconductors’ engineering but this also generates needs for passives with appropriate characteristics. This paper presents fabrication as well as electrical and stability properties of passive components (resistors, capacitors, inductors made in thick-film or Low-Temperature Co-fired Ceramics (LTCC technologies fulfilling demands of high-temperature electronics. Passives with standard dimensions usually are prepared by screen-printing whereas combination of standard screen-printing with photolithography or laser shaping are recommenced for fabrication of micropassives. Attainment of proper characteristics versus temperature as well as satisfactory long-term high-temperature stability of micropassives is more difficult than for structures with typical dimensions for thick-film and LTCC technologies because of increase of interfacial processes’ importance. However it is shown that proper selection of thick-film inks together with proper deposition method permit to prepare thick-film micropassives (microresistors, air-cored microinductors and interdigital microcapacitors suitable for the temperature range between 150°C and 400°C.

  4. Growth of group III nitride films by pulsed electron beam deposition

    International Nuclear Information System (INIS)

    Ohta, J.; Sakurada, K.; Shih, F.-Y.; Kobayashi, A.; Fujioka, H.

    2009-01-01

    We have grown group III nitride films on Al 2 O 3 (0 0 0 1), 6H-SiC (0 0 0 1), and ZnO (0001-bar) substrates by pulsed electron beam deposition (PED) for the first time and investigated their characteristics. We found that c-plane AlN and GaN grow epitaxially on these substrates. It has been revealed that the growth of GaN on atomically flat 6H-SiC substrates starts with the three-dimensional mode and eventually changes into the two-dimensional mode. The GaN films exhibited strong near-band-edge emission in their room temperature photoluminescence spectra. We also found that the use of PED allows us to reduce the epitaxial growth temperature for GaN down to 200 deg. C. - Graphical abstract: We have grown group III nitride films by pulsed electron beam deposition (PED) and found that the films of group III nitrides grow epitaxially on 6H-SiC and Al 2 O 3 substrates. We also found that the use of PED allows us to reduce the epitaxial growth temperature for GaN down to 200 deg. C.

  5. Electron mobility in the inversion layers of fully depleted SOI films

    Energy Technology Data Exchange (ETDEWEB)

    Zaitseva, E. G., E-mail: ZaytsevaElza@yandex.ru; Naumova, O. V.; Fomin, B. I. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2017-04-15

    The dependences of the electron mobility μ{sub eff} in the inversion layers of fully depleted double–gate silicon-on-insulator (SOI) metal–oxide–semiconductor (MOS) transistors on the density N{sub e} of induced charge carriers and temperature T are investigated at different states of the SOI film (inversion–accumulation) from the side of one of the gates. It is shown that at a high density of induced charge carriers of N{sub e} > 6 × 10{sup 12} cm{sup –2} the μeff(T) dependences allow the components of mobility μ{sub eff} that are related to scattering at surface phonons and from the film/insulator surface roughness to be distinguished. The μ{sub eff}(N{sub e}) dependences can be approximated by the power functions μ{sub eff}(N{sub e}) ∝ N{sub e}{sup −n}. The exponents n in the dependences and the dominant mechanisms of scattering of electrons induced near the interface between the SOI film and buried oxide are determined for different N{sub e} ranges and film states from the surface side.

  6. Determination of gluten in glucose syrups

    Czech Academy of Sciences Publication Activity Database

    Dostálek, P.; Gabrovská, D.; Rysová, J.; Mena, M. C.; Hernando, A.; Méndez, E.; Chmelík, Josef; Šalplachta, Jiří

    2009-01-01

    Roč. 22, č. 7-8 (2009), s. 762-765 ISSN 0889-1575 R&D Projects: GA MZe 1B53002 Institutional research plan: CEZ:AV0Z40310501 Keywords : glucose syrup * gluten determination * celiac disease Subject RIV: CB - Analytical Chemistry, Separation Impact factor: 2.423, year: 2009

  7. Sweet potato in gluten-free pancakes.

    Science.gov (United States)

    Gluten-free pancakes were prepared using rice flour, and rice flour replaced with various amounts, at 10, 20, and 40% of sweet potato flour. At 40% sweet potato, the apparent viscosity became comparable to that of the traditional wheat pancake batter. Texture properties of the cooked pancakes, such...

  8. Photochemical approach to high-barrier films for the encapsulation of flexible laminary electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Prager, L., E-mail: lutz.prager@iom-leipzig.de [Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstr. 15, 04318 Leipzig (Germany); Helmstedt, U. [Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstr. 15, 04318 Leipzig (Germany); Herrnberger, H. [Solarion AG, Pereser Höhe 1, Breitscheidstraße 45, 04442 Zwenkau (Germany); Kahle, O. [Fraunhofer-Einrichtung für Polymermaterialien und Composite PYCO, Kantstraße 55, 14513 Teltow (Germany); Kita, F. [AZ Electronic Materials Germany GmbH, Rheingaustraße 190-196, 65203 Wiesbaden (Germany); Münch, M. [Solarion AG, Pereser Höhe 1, Breitscheidstraße 45, 04442 Zwenkau (Germany); Pender, A.; Prager, A.; Gerlach, J.W. [Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstr. 15, 04318 Leipzig (Germany); Stasiak, M. [Fraunhofer-Einrichtung für Polymermaterialien und Composite PYCO, Kantstraße 55, 14513 Teltow (Germany)

    2014-11-03

    Based on results of preceding research and development, thin gas barriers were made by wet application of perhydropolysilazane solution onto polymer films and its subsequent photo-initiated conversion to dense silica layers applying vacuum ultraviolet irradiation. Compared to the state of the art, these layers were sufficiently improved and characterized by spectroscopic methods, by scanning electron microscopy and by gas permeation measurements. Water vapor transmission rates (WVTR) below 10{sup −2} g m{sup −2} d{sup −1} were achieved. In this way, single barrier films were developed and produced on a pilot plant from roll to roll, 250 mm wide, at speeds up to 10 m min{sup −1}. Two films were laminated using adhesives curable with ultraviolet (UV) light and evaluated by peel tests, gas permeation measurement and climate testing. It could be shown that the described high-barrier laminates which exhibit WVTR ≈ 5 × 10{sup −4} g m{sup −2} d{sup −1}, determined by the calcium mirror method, are suitable for encapsulation of flexible thin-film photovoltaic modules. Durability of the encapsulated modules could be verified in several climate tests including damp-heat, thermo-cycle (heating, freezing, wetting) and UV exposures which are equivalent to more than 20 years of endurance at outdoor conditions in temperate climate. In the frame of further research and technical development it seems to be possible to design a cost efficient industrial scale process for the production of encapsulation films for photovoltaic applications. - Highlights: • Dense silica barrier layers were developed by a photochemical approach. • Polymer based barrier films were laminated yielding flexible high-barrier films. • Using these laminates photovoltaic test modules were encapsulated and tested. • A durability of more than 20 years at outdoor conditions could be proved.

  9. Characterization of electron beam evaporated carbon films and compound formation on titanium and silicon

    International Nuclear Information System (INIS)

    Luthin, J.; Linsmeier, C.

    2001-01-01

    The formation of carbon-based mixed materials is unavoidable on the plasma-facing components (e.g. first wall and divertor) of fusion devices when carbon is used together with other materials. On the surfaces of these components very different conditions with respect to particle and energy impact occur. To predict the mixed material formation under these conditions the precise knowledge of the fundamental mechanisms governing these interactions is essential. In this paper we present the results of carbon interaction with titanium and silicon, as model substances for metallic and covalent carbides, during thermal treatment. To perform basic studies of the reactions of carbon with different elements, thin carbon films are produced by electron beam evaporation on the different substrates under UHV conditions. All measurements for chemical analysis are performed using X-ray photoelectron spectroscopy (XPS). We discuss first the properties of the deposited carbon films. The carbon films are characterized on inert gold surfaces and are compared to bulk graphite. Annealing of the carbon films up to 970 K leads to a transition from a disordered carbon network into a graphitic structure. Preparation of carbon films at room temperature on titanium or silicon leads to a limited carbide formation at the carbon/substrate interface. Carbon deposited in excess of several monolayers is present in elementary form. Annealing of the samples leads to complete carbidization consuming the available carbon in both cases. Titanium reacts to TiC and additional substoichiometric carbide, silicon forms SiC with exact stoichiometry. (orig.)

  10. Photodiode Based on CdO Thin Films as Electron Transport Layer

    Science.gov (United States)

    Soylu, M.; Kader, H. S.

    2016-11-01

    Cadmium oxide (CdO) thin films were synthesized by the sol-gel method. The films were analyzed by means of XRD, AFM, and UV/Vis spectrophotometry. X-ray diffraction patterns confirm that the films are formed from CdO with cubic crystal structure and consist of nano-particles. The energy gap of the prepared film was found to be 2.29 eV. The current-voltage ( I- V) characteristics of the CdO/ p-Si heterojunction were examined in the dark and under different illumination intensities. The heterojunction showed high rectifying behavior and a strong photoresponse. Main electrical parameters of the photodiode such as series and shunt resistances ( R s and R sh), saturation current I 0, and photocurrent I ph, were extracted considering a single diode equivalent circuit of a photovoltaic cell. Results indicate that the application of CdO thin films as an electron transport layer on p-Si acts as a photodetector in the field of the UV/visible.

  11. Effect of solubility parameter of monomers on electron beam induced graft-polymerization onto polyethylene films

    International Nuclear Information System (INIS)

    Mori, Koji; Koshiishi, Kenji; Masuhara, Ken-ichi

    1991-01-01

    Electron beam induced graft-polymerization by the mutual irradiation technique of monomers with different solubility parameters δ onto low density polyethylene films (LDPE) and high density polyethylene films (HDPE) were investigated at high dose rates (25 Mrad per second). Graft-polymerization mechanisms were discussed on the basis of grafting rates, surface tensions, atomic ratios of surface by XPS, and SEM images of the grafted films. Grafting rates decreased with increasing δ of monomers, and grafting rates onto LDPE were larger than those onto HDPE. Graft chain contents on surface, which were evaluated in terms of surface tensions and atomic ratios of the surface, increased with increasing δ of monomers, and graft chain contents on surface of HDPE were higher than those of LDPE. It is assumed that mutual solubility of PE and monomers, i.e., infiltration of monomers into PE during graft-polymerization influence grafting rates and graft sites in films. In case of high mutual solubility, grafting rates were large and graft sites spread from the surface into bulk. On the other hand, in case of low mutual solubility, grafting rates were small and graft sites localized on the surface of films. (author)

  12. Optical and Electrical Properties of Tin-Doped Cadmium Oxide Films Prepared by Electron Beam Technique

    Science.gov (United States)

    Ali, H. M.; Mohamed, H. A.; Wakkad, M. M.; Hasaneen, M. F.

    2009-04-01

    Tin-doped cadmium oxide films were deposited by electron beam evaporation technique. The structural, optical and electrical properties of the films were characterized. The X-ray diffraction (XRD) study reveals that the films are polycrystalline in nature. As composition and structure change due to the dopant ratio and annealing temperature, the carrier concentration was varied around 1020 cm-3, and the mobility increased from less than 10 to 45 cm2 V-1 s-1. A transmittance value of ˜83% and a resistivity value of 4.4 ×10-4 Ω cm were achieved for (CdO)0.88(SnO2)0.12 film annealed at 350 °C for 15 min., whereas the maximum value of transmittance ˜93% and a resistivity value of 2.4 ×10-3 Ω cm were obtained at 350 °C for 30 min. The films exhibited direct band-to-band transitions, which corresponded to optical band gaps of 3.1-3.3 eV.

  13. Big-data reflection high energy electron diffraction analysis for understanding epitaxial film growth processes.

    Science.gov (United States)

    Vasudevan, Rama K; Tselev, Alexander; Baddorf, Arthur P; Kalinin, Sergei V

    2014-10-28

    Reflection high energy electron diffraction (RHEED) has by now become a standard tool for in situ monitoring of film growth by pulsed laser deposition and molecular beam epitaxy. Yet despite the widespread adoption and wealth of information in RHEED images, most applications are limited to observing intensity oscillations of the specular spot, and much additional information on growth is discarded. With ease of data acquisition and increased computation speeds, statistical methods to rapidly mine the data set are now feasible. Here, we develop such an approach to the analysis of the fundamental growth processes through multivariate statistical analysis of a RHEED image sequence. This approach is illustrated for growth of La(x)Ca(1-x)MnO(3) films grown on etched (001) SrTiO(3) substrates, but is universal. The multivariate methods including principal component analysis and k-means clustering provide insight into the relevant behaviors, the timing and nature of a disordered to ordered growth change, and highlight statistically significant patterns. Fourier analysis yields the harmonic components of the signal and allows separation of the relevant components and baselines, isolating the asymmetric nature of the step density function and the transmission spots from the imperfect layer-by-layer (LBL) growth. These studies show the promise of big data approaches to obtaining more insight into film properties during and after epitaxial film growth. Furthermore, these studies open the pathway to use forward prediction methods to potentially allow significantly more control over growth process and hence final film quality.

  14. Transverse magnetoresistance induced by electron-surface scattering on thin gold films: Experiment and theory

    International Nuclear Information System (INIS)

    Oyarzún, Simón; Henríquez, Ricardo; Suárez, Marco Antonio; Moraga, Luis; Kremer, Germán; Munoz, Raúl C.

    2014-01-01

    We report new experimental data regarding the transverse magnetoresistance measured in a family of thin gold films of different thickness with the electric field E oriented perpendicular to the magnetic field B (both fields contained within the plane of the film), as well as a theoretical description of size effects based upon a solution of Boltzmann Transport Equation. The measurements were performed at low temperatures T (4 K ≤ T ≤ 50 K) under magnetic field strengths B (1.5 T ≤ B ≤ 9 T). The magnetoresistance signal can be univocally identified as arising from electron-surface scattering, for the Hall mobility at 4 K depends linearly on film thickness. The magnetoresistance signal exhibits a marked thickness dependence, and its curvature as a function of magnetic field B varies with film thickness. The theoretical description of the magnetic field dependence of the magnetoresistance requires a Hall field that varies with the thickness of the film; this Hall field is tuned to reproduce the experimental data.

  15. Transverse magnetoresistance induced by electron-surface scattering on thin gold films: Experiment and theory

    Energy Technology Data Exchange (ETDEWEB)

    Oyarzún, Simón [Institut Lumière Matière, UMR5306 Université Lyon 1-CNRS, Université de Lyon, 69622 Villeurbanne CEDEX (France); Henríquez, Ricardo [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Casilla 110-V, Valparaíso (Chile); Suárez, Marco Antonio; Moraga, Luis [Departamento de Física, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Blanco Encalada 2008, Casilla 487-3, Santiago 8370449 (Chile); Kremer, Germán [Bachillerato, Facultad de Ciencias, Universidad de Chile, Las Palmeras 3425, Santiago 7800024 (Chile); Munoz, Raúl C., E-mail: ramunoz@ing.uchile.cl [Departamento de Física, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Blanco Encalada 2008, Casilla 487-3, Santiago 8370449 (Chile)

    2014-01-15

    We report new experimental data regarding the transverse magnetoresistance measured in a family of thin gold films of different thickness with the electric field E oriented perpendicular to the magnetic field B (both fields contained within the plane of the film), as well as a theoretical description of size effects based upon a solution of Boltzmann Transport Equation. The measurements were performed at low temperatures T (4 K ≤ T ≤ 50 K) under magnetic field strengths B (1.5 T ≤ B ≤ 9 T). The magnetoresistance signal can be univocally identified as arising from electron-surface scattering, for the Hall mobility at 4 K depends linearly on film thickness. The magnetoresistance signal exhibits a marked thickness dependence, and its curvature as a function of magnetic field B varies with film thickness. The theoretical description of the magnetic field dependence of the magnetoresistance requires a Hall field that varies with the thickness of the film; this Hall field is tuned to reproduce the experimental data.

  16. Curvature effects on the electronic and transport properties of semiconductor films

    Science.gov (United States)

    Batista, F. F.; Chaves, Andrey; da Costa, D. R.; Farias, G. A.

    2018-05-01

    Within the effective mass approximation, we study the curvature effects on the electronic and transport properties of semiconductor films. We investigate how the geometry-induced potential resulting exclusively from periodic ripples in the film induces electronic confinement and a superlattice band structure. For fixed curvature parameters, such a confinement can be easily tuned by an external electric field, hence features of the superlattice band structure such as its energy gaps and band curvature can be controlled by an external parameter. We also show that, for some values of curvature and electric field, it is possible to obtain massless Dirac bands for a smooth curved structure. Moreover, we use a wave packet propagation method to demonstrate that the ripples are responsible for a significant inter-sub-band transition, specially for moderate values of the ripple height.

  17. Electronic and magneto-transport in chirality sorted carbon nanotube films

    Science.gov (United States)

    Janas, Dawid; Czechowski, Nikodem; Adamus, Zbigniew; GiŻewski, Tomasz

    2018-01-01

    This research details electronic and magneto-transport in unsorted and chirality-enriched carbon nanotube (CNT) films. By measuring the electrical conductivity from 4 K to 297 K, we were able to assign the governing mechanism of electronic transport. Fluctuation-induced tunnelling was in accordance with the obtained data and very well matched the underlying physics. We demonstrated how a change in the type of CNT to make the film affects its electrical performance. As the temperature was decreased down to cryogenic conditions, up to a 56-fold increase in resistance was noted. Moreover, the measurement of magnetoresistance (MR) revealed a non-monotonic dependence on the applied magnetic field. The initial negative component of MR was eventually overpowered by the positive MR component as the field strength was increased beyond a certain threshold.

  18. Electronic structure and magnetic properties of Ni-doped SnO2 thin films

    Science.gov (United States)

    Sharma, Mayuri; Kumar, Shalendra; Alvi, P. A.

    2018-05-01

    This paper reports the electronic structure and magnetic properties of Ni-doped SnO2 thin film which were grown on Si (100) substrate by PLD (pulse laser deposition) technique under oxygen partial pressure (PO2). For getting electronic structure and magnetic behavior, the films were characterized using near edge X-ray absorption fine structure spectroscopy (NEXAFS) and DC magnetization measurements. The NEXAFS study at Ni L3,2 edge has been done to understand the local environment of Ni and Sn ions within SnO2 lattice. DC magnetization measurement shows that the saturation magnetization increases with the increase in substitution of Ni2+ ions in the system.

  19. Influence of high-energy electron irradiation on field emission properties of multi-walled carbon nanotubes (MWCNTs) films

    Energy Technology Data Exchange (ETDEWEB)

    Patil, Sandip S. [Center for Advanced Studies in Material Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Koinkar, Pankaj M. [Center for International Cooperation in Engineering Education (CICEE), University of Tokushima, 2-1 Minami-Josanjima-Cho, Tokushima 770-8506 (Japan); Dhole, Sanjay D. [Center for Advanced Studies in Material Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); More, Mahendra A., E-mail: mam@physics.unipune.ac.i [Center for Advanced Studies in Material Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Murakami, Ri-ichi, E-mail: murakami@me.tokushima-u.ac.j [Department of Mechanical Engineering, University of Tokushima, 2-1 Minami-Josanjima-Cho, Tokushima 770-8506 (Japan)

    2011-04-15

    The effect of very high energy electron beam irradiation on the field emission characteristics of multi-walled carbon nanotubes (MWCNTs) has been investigated. The MWCNTs films deposited on silicon (Si) substrates were irradiated with 6 MeV electron beam at different fluence of 1x10{sup 15}, 2x10{sup 15} and 3x10{sup 15} electrons/cm{sup 2}. The irradiated films were characterized using scanning electron microscope (SEM) and micro-Raman spectrometer. The SEM analysis clearly revealed a change in surface morphology of the films upon irradiation. The Raman spectra of the irradiated films show structural damage caused by the interaction of high-energy electrons. The field emission studies were carried out in a planar diode configuration at the base pressure of {approx}1x10{sup -8} mbar. The values of the threshold field, required to draw an emission current density of {approx}1 {mu}A/cm{sup 2}, are found to be {approx}0.52, 1.9, 1.3 and 0.8 V/{mu}m for untreated, irradiated with fluence of 1x10{sup 15}, 2x10{sup 15} and 3x10{sup 15} electrons/cm{sup 2}. The irradiated films exhibit better emission current stability as compared to the untreated film. The improved field emission properties of the irradiated films have been attributed to the structural damage as revealed from the Raman studies.

  20. Growth optimization and electronic structure of ultrathin CoO films on Ag(001): A LEED and photoemission study

    Science.gov (United States)

    Barman, Sukanta; Menon, Krishnakumar S. R.

    2018-04-01

    We present here a detailed growth optimization of CoO thin film on Ag(001) involving the effects of different growth parameters on the electronic structure. A well-ordered stoichiometric growth of 5 ML CoO film has been observed at 473 K substrate temperature and 1 × 10-6 mbar oxygen partial pressure. The growth at lower substrate temperature and oxygen partial pressure show non-stoichiometric impurity phases which have been investigated further to correlate the growth parameters with surface electronic structure. The coverage dependent valence band electronic structure of the films grown at optimized condition reveals the presence of interfacial states near the Fermi edge (EF) for lower film coverages. Presence of interfacial states in the stoichiometric films rules out their defect-induced origin. We argue that this is an intrinsic feature of transition metal monoxides like NiO, CoO, MnO in the low coverage regime.

  1. Hydrogen doped thin film diamond. Properties and application for electronic devices

    International Nuclear Information System (INIS)

    Looi, H.J.

    2000-01-01

    The face centered cubic allotrope of carbon, diamond, is a semiconducting material which possesses a valuable combination of extreme properties such as super-hardness, highest thermal conductivity, chemical hardness, radiation hardness, wide bandgap and others. Advances in chemical vapour deposition (CVD) technology have lead to diamond becoming available in previously unattainable forms for example over large areas and with controllable purity. This has generated much research interest towards developing the knowledge and processing technology that would be necessary to fully exploit these extreme properties. Electronic devices fabricated on oxidised boron doped polycrystalline CVD diamond (PCD) displayed very poor and inconsistent characteristic. As a result, many electronic applications of polycrystalline diamond films were confined to ultra-violet (UV) and other forms of device which relied on the high intrinsic resistivity on undoped diamond films. If commercially accessible PCD films are to advance in areas which involve sophisticated electronic applications or to compete with existing semiconductors, the need for a more reliable and fully ionised dopant is paramount. This thesis describes a unique dopant discovered within the growth surface of PCD films. This dopant is related to hydrogen which arises during the growth of diamond films. The aim of this study is to characterise and identify possible applications for this form of dopant. The mechanism for carrier generation remains unknown and based on the experimental results in this work, a model is proposed. The Hall measurements conducted on this conductive layer revealed a p-type nature with promising properties for electronic device application. A more detail study based on electrical and surface science methods were carried out to identify the stability and operating conditions for this dopant. The properties of metal-semiconductor contacts on these surfaces were investigated. The fundamental knowledge

  2. GAGG:ce single crystalline films: New perspective scintillators for electron detection in SEM

    Czech Academy of Sciences Publication Activity Database

    Bok, Jan; Lalinský, Ondřej; Hanuš, M.; Onderišinová, Z.; Kelar, J.; Kučera, M.

    2016-01-01

    Roč. 163, APR (2016), s. 1-5 ISSN 0304-3991 R&D Projects: GA ČR(CZ) GA14-20012S; GA ČR(CZ) GA16-05631S; GA MŠk(CZ) LO1212; GA MŠk ED0017/01/01 Institutional support: RVO:68081731 Keywords : scintillator * GAGG:Ce * multicomponent garnet * epitaxial film * electron detection * SEM Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 2.843, year: 2016

  3. Ultrafast electron diffraction from non-equilibrium phonons in femtosecond laser heated Au films

    Energy Technology Data Exchange (ETDEWEB)

    Chase, T. [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Department of Applied Physics, Stanford University, Stanford, California 94305 (United States); Trigo, M.; Reid, A. H.; Dürr, H. A. [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Li, R.; Vecchione, T.; Shen, X.; Weathersby, S.; Coffee, R.; Hartmann, N.; Wang, X. J. [SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Reis, D. A. [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Department of Applied Physics, Stanford University, Stanford, California 94305 (United States); PULSE Institute, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States)

    2016-01-25

    We use ultrafast electron diffraction to detect the temporal evolution of non-equilibrium phonons in femtosecond laser-excited ultrathin single-crystalline gold films. From the time-dependence of the Debye-Waller factor, we extract a 4.7 ps time-constant for the increase in mean-square atomic displacements. The observed increase in the diffuse scattering intensity demonstrates that the energy transfer from laser-heated electrons to phonon modes near the X and K points in the Au fcc Brillouin zone proceeds with timescales of 2.3 and 2.9 ps, respectively, faster than the Debye-Waller average mean-square displacement.

  4. Terahertz properties of Dirac electrons and holes in HgTe films with critical thickness

    Energy Technology Data Exchange (ETDEWEB)

    Dziom, Uladzislau; Shuvaev, Alexey; Pimenov, Andrei [Institute of Solid State Physics, Vienna University of Technology, 1040 Vienna (Austria); Mikhailov, Nikolai; Kvon, Ze Don [Novosibirsk State University, Novosibirsk 630090 (Russian Federation)

    2016-07-01

    We present and discuss properties of mercury telluride (HgTe) films with critical thickness in far-infrared (THz) spectral range. Density of charge carriers is controlled, using contact-free optical gating by visible light. Transmission measurements in applied magnetic field demonstrate switching from hole to electron-like behavior, as illumination time increases. The cyclotron mass of the electrons, extracted from the data, shows a square root dependence upon the charge concentration in a broad range of parameters. This can be interpreted as a clear proof of a linear dispersion relations, i.e. Dirac-type charge carriers.

  5. Electronic and magnetic properties of TTF and TCNQ covered Co thin films

    Energy Technology Data Exchange (ETDEWEB)

    Geijn, Elmer van, E-mail: e.vangeijn@utwente.nl; Wang, Kai; Jong, Michel P. de [NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)

    2016-05-07

    Interfacial effects like orbital hybridization and charge transfer strongly influence the transfer of spins from ferromagnetic metals to organic semiconductors and can lead to the formation of interfacial states with distinct magnetic properties. The changes in the electronic and magnetic properties of a thin Co film upon adsorption of a layer of either the molecular organic electron donor tetrathiafulvalene (TTF) or the acceptor tetracyanoquinodimethane (TCNQ) have been investigated by X-ray absorption spectroscopy and X-ray magnetic circular dichroism using synchrotron radiation. Clear differences between the spectra of the adsorbed molecules and the neutral molecules show the hybridization of the molecular orbitals with the Co interface. Deposition of both organic materials leads to a small increase of the ratio of the orbital magnetic moment to the spin magnetic moment of the Co atoms at the interface. The main effect of overlayer deposition is a modification of the magnetic hysteresis of the Co film: The TCNQ slightly reduces the coercivity of the Co, while the TTF increases the coercivity by a factor of ∼1.5. These complementary effects of either a molecular organic electron donor or acceptor on the interfacial properties of a metal ferromagnetic thin film are a promising result for the controlled modification of the magnetic structure of hybrid interfaces.

  6. RESEARCH ON THE ELECTRONIC AND OPTICAL PROPERTIES OF POLYMER AND OTHER ORGANIC MOLECULAR THIN FILMS

    Energy Technology Data Exchange (ETDEWEB)

    ALEXEI G. VITUKHNOVSKY; IGOR I. SOBELMAN - RUSSIAN ACADEMY OF SCIENCES

    1995-09-06

    Optical properties of highly ordered films of poly(p-phenylene) (PPP) on different substrates, thin films of mixtures of conjugated polymers, of fullerene and its composition with polymers, molecular J-aggregates of cyanine dyes in frozen matrices have been studied within the framework of the Agreement. Procedures of preparation of high-quality vacuum deposited PPP films on different substrates (ITO, Si, GaAs and etc.) were developed. Using time-correlated single photon counting technique and fluorescence spectroscopy the high quality of PPP films has been confirmed. Dependence of structure and optical properties on the conditions of preparation were investigated. The fluorescence lifetime and spectra of highly oriented vacuum deposited PPP films were studied as a function of the degree of polymerization. It was shown for the first time that the maximum fluorescence quantum yield is achieved for the chain length approximately equal to 35 monomer units. The selective excitation of luminescence of thin films of PPP was performed in the temperature range from 5 to 300 K. The total intensity of luminescence monotonically decreases with decreasing temperature. Conditions of preparation of highly cristallyne fullerene C{sub 60} films by the method of vacuum deposition were found. Composites of C{sub 60} with conjugated polymers PPV and polyacetylene (PA) were prepared. The results on fluorescence quenching, IR and resonant Raman spectroscopy are consistent with earlier reported ultrafast photoinduced electron transfer from PPV to C{sub 60} and show that the electron transfer is absent in the case of the PA-C{sub 60} composition. Strong quenching of PPV fluorescence was observed in the PPV-PA blends. The electron transfer from PPV to PA can be considered as one of the possible mechanisms of this quenching. The dynamics of photoexcitations in different types of J-aggregates of the carbocyanine dye was studied at different temperatures in frozen matrices. The optical

  7. Proceedings of the FNCA 2003 workshop on application of electron accelerator. Radiation system for thin film

    International Nuclear Information System (INIS)

    Yoshii, Fumio; Kume, Tamikazu

    2004-06-01

    'Forum for Nuclear Cooperation in Asia (FNCA) Workshop on Application of Electron Accelerator' was sponsored by the Ministry of Education, Culture, Sports, Science and Technology (MEXT) and co-hosted by Malaysian Institute for Nuclear Technology Research (MINT) and Japan Atomic Energy Research Institute (JAERI). It was held at the Legend Hotel, Kuala Lumpur, Malaysia from 18 to 22 August 2003. The Workshop was attended by 28 experts on application of electron accelerator from each of the participating countries, i.e., China, Indonesia, Korea, Malaysia, The Philippines, Thailand and Vietnam, and 5 participants from Japan. On the first day, a National Executive Management Seminar on Application of Electron Accelerator was held and attended by 87 participants. Total of 19 papers including Seminar lectures, invited papers on film treatment by electron beam, and country reports on EB irradiation system were presented. The major areas of interest of FNCA member states for cooperation were identified for application of low energy electron accelerator as liquid, thin film and granules. The flue gas and wastewater treatments were added to the above major areas. Based on the proposal from the participating countries, discussions were carried out to re-formulate the work plan of the project for three years until FY 2004. All manuscripts submitted by every speaker were included in the proceedings. The 19 of the presented papers are indexed individually. (J.P.N.)

  8. Recent progress on thin-film encapsulation technologies for organic electronic devices

    Science.gov (United States)

    Yu, Duan; Yang, Yong-Qiang; Chen, Zheng; Tao, Ye; Liu, Yun-Fei

    2016-03-01

    Among the advanced electronic devices, flexible organic electronic devices with rapid development are the most promising technologies to customers and industries. Organic thin films accommodate low-cost fabrication and can exploit diverse molecules in inexpensive plastic light emitting diodes, plastic solar cells, and even plastic lasers. These properties may ultimately enable organic materials for practical applications in industry. However, the stability of organic electronic devices still remains a big challenge, because of the difficulty in fabricating commercial products with flexibility. These organic materials can be protected using substrates and barriers such as glass and metal; however, this results in a rigid device and does not satisfy the applications demanding flexible devices. Plastic substrates and transparent flexible encapsulation barriers are other possible alternatives; however, these offer little protection to oxygen and water, thus rapidly degrading the devices. Thin-film encapsulation (TFE) technology is most effective in preventing water vapor and oxygen permeation into the flexible devices. Because of these (and other) reasons, there has been an intense interest in developing transparent barrier materials with much lower permeabilities, and their market is expected to reach over 550 million by 2025. In this study, the degradation mechanism of organic electronic devices is reviewed. To increase the stability of devices in air, several TFE technologies were applied to provide efficient barrier performance. In this review, the degradation mechanism of organic electronic devices, permeation rate measurement, traditional encapsulation technologies, and TFE technologies are presented.

  9. Electronic-Reconstruction-Enhanced Tunneling Conductance at Terrace Edges of Ultrathin Oxide Films.

    Science.gov (United States)

    Wang, Lingfei; Kim, Rokyeon; Kim, Yoonkoo; Kim, Choong H; Hwang, Sangwoon; Cho, Myung Rae; Shin, Yeong Jae; Das, Saikat; Kim, Jeong Rae; Kalinin, Sergei V; Kim, Miyoung; Yang, Sang Mo; Noh, Tae Won

    2017-11-01

    Quantum mechanical tunneling of electrons across ultrathin insulating oxide barriers has been studied extensively for decades due to its great potential in electronic-device applications. In the few-nanometers-thick epitaxial oxide films, atomic-scale structural imperfections, such as the ubiquitously existed one-unit-cell-high terrace edges, can dramatically affect the tunneling probability and device performance. However, the underlying physics has not been investigated adequately. Here, taking ultrathin BaTiO 3 films as a model system, an intrinsic tunneling-conductance enhancement is reported near the terrace edges. Scanning-probe-microscopy results demonstrate the existence of highly conductive regions (tens of nanometers wide) near the terrace edges. First-principles calculations suggest that the terrace-edge geometry can trigger an electronic reconstruction, which reduces the effective tunneling barrier width locally. Furthermore, such tunneling-conductance enhancement can be discovered in other transition metal oxides and controlled by surface-termination engineering. The controllable electronic reconstruction can facilitate the implementation of oxide electronic devices and discovery of exotic low-dimensional quantum phases. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Flexible structured high-frequency film bulk acoustic resonator for flexible wireless electronics

    International Nuclear Information System (INIS)

    Zhou, Changjian; Shu, Yi; Yang, Yi; Ren, Tian-Ling; Jin, Hao; Dong, Shu-Rong; Chan, Mansun

    2015-01-01

    Flexible electronics have inspired many novel and very important applications in recent years and various flexible electronic devices such as diodes, transistors, circuits, sensors, and radiofrequency (RF) passive devices including antennas and inductors have been reported. However, the lack of a high-performance RF resonator is one of the key bottlenecks to implement flexible wireless electronics. In this study, for the first time, a novel ultra-flexible structured film bulk acoustic resonator (FBAR) is proposed. The flexible FBAR is fabricated on a flexible polyimide substrate using piezoelectric thin film aluminum nitride (AlN) for acoustic wave excitation. Both the shear wave and longitudinal wave can be excited under the surface interdigital electrodes configuration we proposed. In the case of the thickness extension mode, a flexible resonator with a working frequency as high as of 5.2325 GHz has been realized. The resonators stay fully functional under bending status and after repeated bending and re-flattening operations. This flexible high-frequency resonator will serve as a key building block for the future flexible wireless electronics, greatly expanding the application scope of flexible electronics. (paper)

  11. Reversal of lattice, electronic structure, and magnetism in epitaxial SrCoOx thin films

    Science.gov (United States)

    Jeen, H.; Choi, W. S.; Lee, J. H.; Cooper, V. R.; Lee, H. N.; Seo, S. S. A.; Rabe, K. M.

    2014-03-01

    SrCoOx (x = 2.5 - 3.0, SCO) is an ideal material to study the role of oxygen content for electronic structure and magnetism, since SCO has two distinct topotactic phases: the antiferromagnetic insulating brownmillerite SrCoO2.5 and the ferromagnetic metallic perovskite SrCoO3. In this presentation, we report direct observation of a reversible lattice and electronic structure evolution in SrCoOx epitaxial thin films as well as different magnetic and electronic ground states between the topotactic phases.[2] By magnetization measurements, optical absorption, and transport measurements drastically different electronic and magnetic ground states are found in the epitaxially grown SrCoO2.5 and SrCoO3 thin films by pulsed laser epitaxy. First-principles calculations confirm substantial, which originate from the modification in the Co valence states and crystallographic structures. By real-time spectroscopic ellipsometry, the two electronically and magnetically different phases can be reversibly changed by changing the ambient pressure at greatly reduced temperatures. Our finding provides an important pathway to understanding the novel oxygen-content-dependent phase transition uniquely found in multivalent transition metal oxides. The work was supported by the U.S. Department of Energy, Basic Energy Sciences, Materials Sciences and Engineering Division.

  12. Electron irradiation induced reduction of the permittivity in chalcogenide glass (As2S3) thin film

    KAUST Repository

    San Roman Alerigi, Damian; Anjum, Dalaver H.; Zhang, Yaping; Yang, Xiaoming; Ben Slimane, Ahmed; Ng, Tien Khee; Hedhili, Mohamed N.; Alsunaidi, Mohammad; Ooi, Boon S.

    2013-01-01

    In this paper, we investigate the effect of electron beam irradiation on the dielectric properties of As 2 S 3 chalcogenide glass. By means of low-loss electron energy loss spectroscopy, we derive the permittivity function, its dispersive relation, and calculate the refractive index and absorption coefficients under the constant permeability approximation. The measured and calculated results show a heretofore unseen phenomenon: a reduction in the permittivity of ? 40 %. Consequently a reduction of the refractive index of 20%, hence, suggests a conspicuous change in the optical properties of the material under irradiation with a 300 keV electron beam. The plausible physical phenomena leading to these observations are discussed in terms of the homopolar and heteropolar bond dynamics under high energy absorption. The reported phenomena, exhibited by As 2 S 3-thin film, can be crucial for the development of photonics integrated circuits using electron beam irradiation method. © 2013 American Institute of Physics.

  13. Electronic Coupling Dependence of Ultrafast Interfacial Electron Transfer on Nanocrystalline Thin Films and Single Crystal

    Energy Technology Data Exchange (ETDEWEB)

    Lian, Tianquan

    2014-04-22

    The long-term goal of the proposed research is to understand electron transfer dynamics in nanoparticle/liquid interface. This knowledge is essential to many semiconductor nanoparticle based devices, including photocatalytic waste degradation and dye sensitized solar cells.

  14. Density of the unoccupied electronic states of the ultrathin films of the aziridinylphenylpyrrol substituted fullerene

    International Nuclear Information System (INIS)

    Komolov, A.S.; Lazneva, E.F.; Gerasimova, N.B.; Panina, Yu.A.; Zashikhin, G.D.; Baramygin, A.V.; Si, P.; Akhremtchik, S.N.; Gavrikov, A.A.

    2015-01-01

    Graphical abstract: - Highlights: • DOUS of the ultrathin films of the aziridinylphenylpyrrol substituted C_6_0 was determined by using the transmission of the low-energy electrons technique and by the DFT calculations. • The introduction of the APP substituent to C_6_0 molecule was accompanied by the modifications of DOUS in the energy range from 2 eV to 9 eV above E_F. • The major DOUS bands were assigned π* and σ* - type character using the spatial distribution of the relevant orbitals obtained from the DFT calculation results. - Abstract: The ultrathin films of aziridinylphenylpyrrol-C_6_0 (APP-C_6_0) and of the unsubstituted C_6_0 thermally deposited in UHV on an oxidized silicon substrate (SiO_2)n-Si were studied experimentally using the very low energy electron diffraction (VLEED) method and the total current spectroscopy (TCS) measurement scheme. The density of the unoccupied electronic states (DOUS) located 2-20 eV above the Fermi level (E_F) of the films under study was determined using the TCS results and using the results of the density functional theory (DFT) calculations of the vacant electronic orbitals of the APP-C_6_0 and C_6_0 molecules. The DOUS peak structure obtained on the basis of the calculation results corresponds well to the structure of the major DOUS bands obtained from the TCS experiment. The comparison of the DOUS spectra of the APP-C_6_0 and C_6_0 films under study showed that the introduction of the APP substituent to the C_6_0 molecule was accompanied by the pronounced changes of the π* DOUS bands in the energy range from 2 eV to 5 eV above E_F and of the DOUS band composed from both π* and σ* - type orbitals in the energy range from 5 eV to 9 eV above E_F. The formation of the low-lying σ* DOUS band in the APP-C_6_0 film in the energy range from 8 eV to 13 eV above E_F can be explained by the superposition of the relevant DOUS maxima from the C_6_0 film and from the APP fragment.

  15. Piezoelectric properties of PbTiO(3) thin films characterized with piezoresponse force and high resolution transmission electron microscopy

    NARCIS (Netherlands)

    Morelli, A.; Venkatesan, Sriram; Kooi, B. J.; Palasantzas, G.; De Hosson, J. Th. M.

    2009-01-01

    In this paper we investigate the piezoelectric properties of PbTiO(3) thin films grown by pulsed laser deposition with piezoresponse force microscopy and transmission electron microscopy. The as-grown films exhibit an upward polarization, inhomogeneous distribution of piezoelectric characteristics

  16. Effects of Thickness, Pulse Duration, and Size of Strip Electrode on Ferroelectric Electron Emission of Lead Zirconate Titanate Films

    Science.gov (United States)

    Yaseen, Muhammad; Ren, Wei; Chen, Xiaofeng; Feng, Yujun; Shi, Peng; Wu, Xiaoqing

    2018-02-01

    Sol-gel-derived lead zirconate titanate (PZT) thin-film emitters with thickness up to 9.8 μm have been prepared on Pt/TiO2/SiO2/Si wafer via chemical solution deposition with/without polyvinylpyrrolidone (PVP) modification, and the relationship between the film thickness and electron emission investigated. Notable electron emission was observed on application of a trigger voltage of 120 V for PZT film with thickness of 1.1 μm. Increasing the film thickness decreased the threshold field to initiate electron emission for non-PVP-modified films. In contrast, the electron emission behavior of PVP-modified films did not show significant dependence on film thickness, probably due to their porous structure. The emission current increased with decreasing strip width and space between strips. Furthermore, it was observed that increasing the duration of the applied pulse increased the magnitude of the emission current. The stray field on the PZT film thickness was also calculated and found to increase with increasing ferroelectric sample thickness. The PZT emitters were found to be fatigue free up to 105 emission cycles. Saturated emission current of around 25 mA to 30 mA was achieved for the electrode pattern used in this work.

  17. Atmospheric scanning electron microscope observes cells and tissues in open medium through silicon nitride film.

    Science.gov (United States)

    Nishiyama, Hidetoshi; Suga, Mitsuo; Ogura, Toshihiko; Maruyama, Yuusuke; Koizumi, Mitsuru; Mio, Kazuhiro; Kitamura, Shinichi; Sato, Chikara

    2010-03-01

    Direct observation of subcellular structures and their characterization is essential for understanding their physiological functions. To observe them in open environment, we have developed an inverted scanning electron microscope with a detachable, open-culture dish, capable of 8 nm resolution, and combined with a fluorescence microscope quasi-simultaneously observing the same area from the top. For scanning electron microscopy from the bottom, a silicon nitride film window in the base of the dish maintains a vacuum between electron gun and open sample dish while allowing electrons to pass through. Electrons are backscattered from the sample and captured by a detector under the dish. Cells cultured on the open dish can be externally manipulated under optical microscopy, fixed, and observed using scanning electron microscopy. Once fine structures have been revealed by scanning electron microscopy, their component proteins may be identified by comparison with separately prepared fluorescence-labeled optical microscopic images of the candidate proteins, with their heavy-metal-labeled or stained ASEM images. Furthermore, cell nuclei in a tissue block stained with platinum-blue were successfully observed without thin-sectioning, which suggests the applicability of this inverted scanning electron microscope to cancer diagnosis. This microscope visualizes mesoscopic-scale structures, and is also applicable to non-bioscience fields including polymer chemistry. (c) 2010 Elsevier Inc. All rights reserved.

  18. Lead-doped electron-beam-deposited Bi-Sr-Ca-Cu-O superconducting thin films

    Energy Technology Data Exchange (ETDEWEB)

    Agnihotry, S.A.; Saini, K.K.; Kant, C.; Sharma, C.P.; Ekbote, S.N.; Asthana, P.; Nagpal, K.C.; Chandra, S. (National Physical Lab., New Delhi (India))

    1991-03-20

    Superconducting thin films of the lead-doped Bi-Sr-Ca-Cu-O system have been prepared on (100) single-crystal SrTiO{sub 3} substrates by an electron beam deposition technique using a single sintered pellet as the evaporation source. As-deposited films are amorphous and non-superconducting; post-deposition annealing at an optimized temperature in air has been found to result in crystalline and superconducting films. The superconducting characteristics of the films have been observed to be sensitive not only to the duration and temperature of post-deposition annealing but also to the lead content and the sintering parameters for the pellet to be used as the evaporation source. A pellet with nominal composition Bi{sub 3}Pb{sub 1}Sr{sub 3}Ca{sub 3}Cu{sub 4}O{sub y} that had been sintered for 200 h zero resistivity Tc{sup 0}=112 K. However, films deposited using such a pellet as the evaporation source had Tc{sup 0} {approx equal} 73-78 K, as had the films deposited from a pellet without any lead. We investigated systematically films deposited from pellets with more lead and sintered for different durations. It is evident from these investigations that pellets with nominal composition Bi{sub 3}Pb{sub 2}Sr{sub 3}Ca{sub 3}Cu{sub 4}O{sub y}, i.e. with an excess of lead, and sintered for about 75 h when used as the evaporation source yield films with Tc{sup 0} {approx equal} 100 K when annealed between 835 and 840deg C for an optimized long duration. The films are characterized by X-ray diffraction and energy-dispersive spectroscopy techniques and have been found to be highly c axis oriented. The effect of lead in promoting a high Tc{sup 0}=110 K phase seems to be similar to that in bulk ceramics. (orig.).

  19. In vivo dosimetry with MOSFETs and GAFCHROMIC films during electron IORT for Accelerated Partial Breast Irradiation.

    Science.gov (United States)

    Petoukhova, Anna; Rüssel, Iris; Nijst-Brouwers, Julienne; van Wingerden, Ko; van Egmond, Jaap; Jacobs, Daphne; Marinelli, Andreas; van der Sijp, Joost; Koper, Peter; Struikmans, Henk

    2017-12-01

    The purpose of this study was to compare the delivered dose to the expected intraoperative radiation therapy (IORT) dose with in vivo dosimetry. For IORT using electrons in accelerated partial breast irradiation, this is especially relevant since a high dose is delivered in a single fraction. For 47 of breast cancer patients, in vivo dosimetry was performed with MOSFETs and/or GAFCHROMIC EBT2 films. A total dose of 23.33 Gy at d max was given directly after completing the lumpectomy procedure with electron beams generated with an IORT dedicated mobile accelerator. A protection disk was used to shield the thoracic wall. The results of in vivo MOSFET dosimetry for 27 patients and GAFROMIC film dosimetry for 20 patients were analysed. The entry dose for the breast tissue, measured with MOSFETs, (mean value 22.3 Gy, SD 3.4%) agreed within 1.7% with the expected dose (mean value 21.9 Gy). The dose in breast tissue, measured with GAFCHROMIC films (mean value 23.50 Gy) was on average within 0.7% (SD = 3.7%, range -5.5% to 5.6%) of the prescribed dose of 23.33 Gy. The dose measured with MOSFETs and GAFROMIC EBT2 films agreed well with the expected dose. For both methods, the dose to the thoracic wall, lungs and heart for left sided patents was lower than 2.5 Gy even when 12 MeV was applied. The positioning time of GAFCHROMIC films is negligible and based on our results we recommend its use as a standard tool for patient quality assurance during breast cancer IORT. Copyright © 2017 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

  20. Eu-emission quenching by electron screening in VO2 thin films

    International Nuclear Information System (INIS)

    Liu, H.; Lysenko, S.; Rua, A.; Vikhnin, V.; Vasquez, O.; Fernandez, F.E.

    2006-01-01

    As a kind of phase transition functional material, Vanadium dioxide (VO 2 ) thin films deposited on fused quartz substrate were fabricated using pulsed laser deposition (PLD) technique. Europium was introduced for structure study. By laser excitation at 526 nm, VO 2 thin film undergoes a reversible and ultrafast phase transition from semiconductor to metallic state, which results in a change of optical properties. In fluorescence measurement, Eu emission was found severely quenched in all as-grown thin films. After annealing the sample in air, a red Eu-emission appeared. The emission spectrum is characterized by a pronounced twin peak, centered at 617 nm ( 5 D - 7 F 2 ), surrounded by a set of broad, but relatively weaker bands (emission from 5 D to 7 F j manifold). The emission lifetime increased when the sample annealed at higher temperature for longer time. Each spectral component is actually a doublet which is the spectral overlap of emissions from Eu 3+ situated in two sites with different configurations. One is a linear h-Eu 3+ -h, where h stands for holes. Another is a right-angle configuration of h-Eu 3+ -h with Eu 3+ in the corner. In as-grown VO 2 film, Eu 3+ ions can either substitute V 4+ , leaving a negative charge around (Eu 3+ -O) - , or substitute V 5+ , leaving two negative charges around (Eu 3+ -O) -- . Due to trapped electrons in a large radius state, it covers Eu 3+ V 4+ -V 5+ complexes. It suggests that the screening by degenerate electronic gas may result in switching off the Eu-related optical response for a wide spectral region, causing emission quenching in VO 2 films

  1. Optical modeling of plasma-deposited ZnO films: Electron scattering at different length scales

    International Nuclear Information System (INIS)

    Knoops, Harm C. M.; Loo, Bas W. H. van de; Smit, Sjoerd; Ponomarev, Mikhail V.; Weber, Jan-Willem; Sharma, Kashish; Kessels, Wilhelmus M. M.; Creatore, Mariadriana

    2015-01-01

    In this work, an optical modeling study on electron scattering mechanisms in plasma-deposited ZnO layers is presented. Because various applications of ZnO films pose a limit on the electron carrier density due to its effect on the film transmittance, higher electron mobility values are generally preferred instead. Hence, insights into the electron scattering contributions affecting the carrier mobility are required. In optical models, the Drude oscillator is adopted to represent the free-electron contribution and the obtained optical mobility can be then correlated with the macroscopic material properties. However, the influence of scattering phenomena on the optical mobility depends on the considered range of photon energy. For example, the grain-boundary scattering is generally not probed by means of optical measurements and the ionized-impurity scattering contribution decreases toward higher photon energies. To understand this frequency dependence and quantify contributions from different scattering phenomena to the mobility, several case studies were analyzed in this work by means of spectroscopic ellipsometry and Fourier transform infrared (IR) spectroscopy. The obtained electrical parameters were compared to the results inferred by Hall measurements. For intrinsic ZnO (i-ZnO), the in-grain mobility was obtained by fitting reflection data with a normal Drude model in the IR range. For Al-doped ZnO (Al:ZnO), besides a normal Drude fit in the IR range, an Extended Drude fit in the UV-vis range could be used to obtain the in-grain mobility. Scattering mechanisms for a thickness series of Al:ZnO films were discerned using the more intuitive parameter “scattering frequency” instead of the parameter “mobility”. The interaction distance concept was introduced to give a physical interpretation to the frequency dependence of the scattering frequency. This physical interpretation furthermore allows the prediction of which Drude models can be used in a specific

  2. Electron-lattice energy relaxation in laser-excited thin-film Au-insulator heterostructures studied by ultrafast MeV electron diffraction.

    Science.gov (United States)

    Sokolowski-Tinten, K; Shen, X; Zheng, Q; Chase, T; Coffee, R; Jerman, M; Li, R K; Ligges, M; Makasyuk, I; Mo, M; Reid, A H; Rethfeld, B; Vecchione, T; Weathersby, S P; Dürr, H A; Wang, X J

    2017-09-01

    We apply time-resolved MeV electron diffraction to study the electron-lattice energy relaxation in thin film Au-insulator heterostructures. Through precise measurements of the transient Debye-Waller-factor, the mean-square atomic displacement is directly determined, which allows to quantitatively follow the temporal evolution of the lattice temperature after short pulse laser excitation. Data obtained over an extended range of laser fluences reveal an increased relaxation rate when the film thickness is reduced or the Au-film is capped with an additional insulator top-layer. This behavior is attributed to a cross-interfacial coupling of excited electrons in the Au film to phonons in the adjacent insulator layer(s). Analysis of the data using the two-temperature-model taking explicitly into account the additional energy loss at the interface(s) allows to deduce the relative strength of the two relaxation channels.

  3. Evolution of Gluten Content in Cereal-Based Gluten-Free Products: An Overview from 1998 to 2016

    Directory of Open Access Journals (Sweden)

    María Ángeles Bustamante

    2017-01-01

    Full Text Available The treatment of Celiac disease consists in a strict lifelong gluten-free (GF diet. As the ingestion of small amounts can have damaging complications, there has been an ongoing discussion regarding the safe threshold for dietary residual gluten. The aim was to analyze the evolution of gluten content in cereal-based GF foodstuffs (n = 3141 from 1998 to 2016 measured by the enzyme-linked immunosorbent assay (ELISA technique. Eight categories were defined: flours, breakfast cereals/bars, bakery, pasta, breads, dough, snacks, and yeasts, and these were divided into GF labeled-foods (GF-L or reportedly GF foodstuffs, but not certified (GF-NC. Gluten-detection was decreased over time in line with the evolving European regulations about food information and gluten content claims. This decline started sooner in GF-L products than in GF-NC. As a whole, gluten was detected in 371 samples, with breakfast cereals/bars being the most contaminated group. Snacks and yeasts changed from being high gluten-detected samples to being totally GF over the years. The downside is that, of contaminated samples, those in the low levels of gluten detection range have decreased while flour samples containing over 100 mg/kg gluten have risen in the 2013–2016 period. Obtained data confirm that GF cereal-based foods are becoming safer but gluten control must be maintained.

  4. Confocal fluorescence microscopy investigation of visible emitting defects induced by electron beam lithography in LIF films

    Energy Technology Data Exchange (ETDEWEB)

    Montereali, R.M.; Bigotta, S.; Pace, A.; Piccinini, M. [ENEA, Divisione Fisica Applicata, Centro Ricerche Frascati, Frascati, RM (Italy); Burattini, E.; Grilli, A.; Raco, A. [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Fisica, Frascati, Rome (Italy); Giammatteo, M. [Unita' Istituto Nazionale di Fisica Nucleare, Frascati, RM (Italy)]|[L' Aquila Univ., L' Aquila (Italy). Centro di Microscopia Elettronica; Picozzi, P.; Santucci, S. [Unita' Istituto Nazionale di Fisica Nucleare, Frascati, RM (Italy)]|[L' Aquila Univ., L' Aquila (Italy). Dipt. di Fisica

    2000-07-01

    Low energy electron irradiation of lithium fluoride (LiF), in the form of bulk crystals and films, gives rise to the stable formation of primary F defects and aggregated color centers in a thin layer located at the surface of the investigated material. For the first time a confocal light scanning microscope (CLSM) in fluorescence mode was used to reconstruct the depth distribution of efficiently emitting laser active color centers in a stripe-like region induced by 12 and 16 keV electrons on LiF films thermally evaporated on glass. The formation of the F{sub 3}{sup +} and F{sub 2} aggregated defects appears restricted to the electron penetration and proportional to their energy depth profile, as obtained from Monte Carlo simulations. [Italian] L'irraggiamento con elettroni di bassa energia del fluoruro di litio (LiF), in forma di cristalli e film, induce la formazione di difetti primari F e centri di colore aggregati stabili in un sottile strato localizzato alla superficie del materiale investigato. Per la prima volta un microscopio confocale a scansione (CLSM) in modalita' fluorescenza e' stato usato per ricostruire la distribuzione di centri di colore laser attivi ad alta efficienza di emissione nel visibile, in strisce colorate ottenute con elettroni da 12 e 16 keV su film di LiF evaporati termicamente su vetro. La formazione dei difetti aggregati F2 e F3+ risulta ristretta spazialmente nella regione di penetrazione degli elettroni e proporzionale al profilo della distribuzione dell'energia da essi depositata, ricavata tramite simulazioni Monte Carlo.

  5. Applying Simulation Method in Formulation of Gluten-Free Cookies

    Directory of Open Access Journals (Sweden)

    Nikitina Marina

    2017-01-01

    Full Text Available At present time priority direction in the development of new food products its developing of technology products for special purposes. These types of products are gluten-free confectionery products, intended for people with celiac disease. Gluten-free products are in demand among consumers, it needs to expand assortment, and improvement of quality indicators. At this article results of studies on the development of pastry products based on amaranth flour does not contain gluten. Study based on method of simulation recipes gluten-free confectionery functional orientation to optimize their chemical composition. The resulting products will allow to diversify and supplement the necessary nutrients diet for people with gluten intolerance, as well as for those who follow a gluten-free diet.

  6. Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution.

    Science.gov (United States)

    Faber, Hendrik; Das, Satyajit; Lin, Yen-Hung; Pliatsikas, Nikos; Zhao, Kui; Kehagias, Thomas; Dimitrakopulos, George; Amassian, Aram; Patsalas, Panos A; Anthopoulos, Thomas D

    2017-03-01

    Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In 2 O 3 /ZnO heterojunction. We find that In 2 O 3 /ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In 2 O 3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In 2 O 3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications.

  7. Electronic response of a photodiode coupled to a boron thin film

    Energy Technology Data Exchange (ETDEWEB)

    Costa, Priscila; Costa, Fabio E.; Raele, Marcus P.; Zahn, Guilherme S.; Geraldo, Bianca; Vieira Junior, Nilson D.; Samad, Ricardo E.; Genezini, Frederico A., E-mail: priscila3.costa@usp.br, E-mail: fredzini@ipen.br [Instituto de Pesquisas Energéticas e Nucleares (IPEN/CNEN-SP), São Paulo, SP (Brazil)

    2017-07-01

    A portable thermal neutron detector is proposed in this work using a silicon photodiode coupled to a boron thin film. The aim of this work was to verify the effect in the electronic response of this specific photodiode due to boron deposition, since the direct deposition of boron in the semiconductor surface could affect its electrical properties specifically the p-type layer that affects directly the depletion region of the semiconductor reducing the neutron detector efficiency count. Three boron depositions with different thickness were performed in the photodiode (S3590-09) surface by pulsed laser deposition and the photodiode was characterized, before and after the deposition process, using a radioactive americium source. Energy spectra were used to verify the electronic response of the photodiode, due to the fact that it is possible to relate it to the photopeak pulse height and resolution. Spectra from the photodiode without and with boron film deposition were compared and a standard photodiode (S3590-04) that had the electronic signal conserved was used as reference to the pulse height for electronics adjustments. The photopeak energy resolution for the photodiode without boron layer was 10.26%. For the photodiode with boron deposition at different thicknesses, the resolution was: 7.64 % (0.14 μm), 7.30 % (0.44 μm) and 6.80 % (0.63 μm). From these results it is possible to evaluate that there was not any degradation in the silicon photodiode. (author)

  8. Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution

    KAUST Repository

    Faber, Hendrik

    2017-04-28

    Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In2O3/ZnO heterojunction. We find that In2O3/ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In2O3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In2O3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications.

  9. A curated gluten protein sequence database to support development of proteomics methods for determination of gluten in gluten-free foods.

    Science.gov (United States)

    Bromilow, Sophie; Gethings, Lee A; Buckley, Mike; Bromley, Mike; Shewry, Peter R; Langridge, James I; Clare Mills, E N

    2017-06-23

    The unique physiochemical properties of wheat gluten enable a diverse range of food products to be manufactured. However, gluten triggers coeliac disease, a condition which is treated using a gluten-free diet. Analytical methods are required to confirm if foods are gluten-free, but current immunoassay-based methods can unreliable and proteomic methods offer an alternative but require comprehensive and well annotated sequence databases which are lacking for gluten. A manually a curated database (GluPro V1.0) of gluten proteins, comprising 630 discrete unique full length protein sequences has been compiled. It is representative of the different types of gliadin and glutenin components found in gluten. An in silico comparison of their coeliac toxicity was undertaken by analysing the distribution of coeliac toxic motifs. This demonstrated that whilst the α-gliadin proteins contained more toxic motifs, these were distributed across all gluten protein sub-types. Comparison of annotations observed using a discovery proteomics dataset acquired using ion mobility MS/MS showed that more reliable identifications were obtained using the GluPro V1.0 database compared to the complete reviewed Viridiplantae database. This highlights the value of a curated sequence database specifically designed to support the proteomic workflows and the development of methods to detect and quantify gluten. We have constructed the first manually curated open-source wheat gluten protein sequence database (GluPro V1.0) in a FASTA format to support the application of proteomic methods for gluten protein detection and quantification. We have also analysed the manually verified sequences to give the first comprehensive overview of the distribution of sequences able to elicit a reaction in coeliac disease, the prevalent form of gluten intolerance. Provision of this database will improve the reliability of gluten protein identification by proteomic analysis, and aid the development of targeted mass

  10. Effect of solubility parameter of solvents on electron beam induced graft-polymerization onto polyethylene films

    International Nuclear Information System (INIS)

    Mori, Koji; Koshiishi, Kenji; Masuhara, Ken-ichi

    1992-01-01

    Electron beam induced graft-polymerization by the mutual irradiation technique of methyl methacrylate (MMA) and methacrylic acid (MAAc) blended with solvents, which have different solubility parameters δ, onto high density polyethylene films (PE) were investigated at high dose rates (25 Mrad per second). Graft-polymerization mechanisms were discussed on the basis of grafting rates, surface tensions, atomic rations on the surface by XPS, and SEM images of the grafted films. Grafting rates decreased with increasing δ of solvents, and grafting rates for MMA were larger than those for MAAc. Graft chain contents on the surface, which were evaluated in terms of surface tensions and atomic ratios on the surface, increased with increasing δ of solvents, and graft chain contents on the surface of MAAc grafted PE were higher than those of MMA grafted PE. It is assumed that mutual solubility of PE and solvents (monomer solutions), i.e., infiltration of monomer solutions into PE during graft-polymerization, influenced grafting rates and graft sites in films. In case of high mutual solubility, grafting rates were large and graft sites spread from the surface into bulk. On the other hand, in case of low mutual solubility, grafting rates were small and graft sites localized on the surface of films. (author)

  11. Interfacial electronic structure of Na deposited on rubrene thin film studied by synchrotron radiation photoemission

    International Nuclear Information System (INIS)

    Wei, Ching-Hsuan; Cheng, Chiu-Ping; Lin, Hong-Cheu; Pi, Tun-Wen

    2015-01-01

    Graphical abstract: - Highlights: • Na deposited on rubrene had undergone three-stage development process via (1) atomic diffusion, (2) atomic incorporation in the surface region, (3) formation of a metallic film. • High resolution core-level photoemission was used to determine the location of the doped Na atoms, which is affiliated at the end position of the tetracene-like backbone. • Na metal was formed on the rubrene thin film. • Ionization potential of the organic molecule regulated with different Na doping concentration could be controllable and favorable in practical applications. - Abstract: The electronic structure of rubrene doped with various concentrations of Na was studied by synchrotron-radiation photoemission. Three stages of development were found with increasing Na concentration; Na penetrating deep into the organic film, followed by development of gap states, and ended with a metallic Na film. The charge transfer from Na to rubrene resulted in a vacuum-level shift. By doping Na into rubrene, we could control the IP of the organic molecule, which is favorable for application in organic semiconductor devices.

  12. Electron beam irradiation and addition of poly(vinyl alcohol) affect gelatin based-films properties

    International Nuclear Information System (INIS)

    Inamura, Patricia Y.; Mastro, Nelida L. del

    2015-01-01

    Gelatin is a mixture of high molecular weight polypeptides, product of denaturation, and partial structural degradation of collagen, and one of the first materials employed as biomaterials. Aqueous solutions of gelatin (10%), glycerin as plasticizer and poly(vinyl alcohol) (PVA) up to 10% were prepared in a water bath at 70 deg C under constant stirring. Films were irradiated with 10 and 20 kGy using an electron beam accelerator, dose rate of 22.4 kGy s -1 , energy 1.407 MeV, at room temperature, in the presence of air. After irradiation, mechanical properties, color measurements, water absorption, moisture and film solubility were analyzed. The films showed an improvement in maximum force to rupture the film with increase of the irradiation dose. The higher the puncture force to rupture the lower the elongation at break. Colorimetric tests showed significant differences between samples, and also differences depending of the applied radiation dose, and analyzed color parameter. In water absorption tests a decrease of absorption percentage was found with the increase of the dose for PVA free and 5% PVA samples. The addition of PVA increased the water absorption for all applied doses. The modifications in gelatin colloids can be appointed to radiation-induced crosslinking. Also, the PVA concentration in the samples influenced the resultant material properties. (author)

  13. Electron beam irradiation and addition of poly(vinyl alcohol) affect gelatin based-films properties

    Energy Technology Data Exchange (ETDEWEB)

    Inamura, Patricia Y.; Mastro, Nelida L. del, E-mail: pinamura@ipen.br [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil)

    2015-07-01

    Gelatin is a mixture of high molecular weight polypeptides, product of denaturation, and partial structural degradation of collagen, and one of the first materials employed as biomaterials. Aqueous solutions of gelatin (10%), glycerin as plasticizer and poly(vinyl alcohol) (PVA) up to 10% were prepared in a water bath at 70 deg C under constant stirring. Films were irradiated with 10 and 20 kGy using an electron beam accelerator, dose rate of 22.4 kGy s{sup -1}, energy 1.407 MeV, at room temperature, in the presence of air. After irradiation, mechanical properties, color measurements, water absorption, moisture and film solubility were analyzed. The films showed an improvement in maximum force to rupture the film with increase of the irradiation dose. The higher the puncture force to rupture the lower the elongation at break. Colorimetric tests showed significant differences between samples, and also differences depending of the applied radiation dose, and analyzed color parameter. In water absorption tests a decrease of absorption percentage was found with the increase of the dose for PVA free and 5% PVA samples. The addition of PVA increased the water absorption for all applied doses. The modifications in gelatin colloids can be appointed to radiation-induced crosslinking. Also, the PVA concentration in the samples influenced the resultant material properties. (author)

  14. Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

    Science.gov (United States)

    Simpson, Lin Jay

    2013-12-17

    A thin film stack (100, 200) is provided for use in electronic devices such as photovoltaic devices. The stack (100, 200) may be integrated with a substrate (110) such as a light transmitting/transmissive layer. A electrical conductor layer (120, 220) is formed on a surface of the substrate (110) or device layer such as a transparent conducting (TC) material layer (120,220) with pin holes or defects (224) caused by manufacturing. The stack (100) includes a thin film (130, 230) of metal that acts as a barrier for environmental contaminants (226, 228). The metal thin film (130,230) is deposited on the conductor layer (120, 220) and formed from a self-healing metal such as a metal that forms self-terminating oxides. A permeation plug or block (236) is formed in or adjacent to the thin film (130, 230) of metal at or proximate to the pin holes (224) to block further permeation of contaminants through the pin holes (224).

  15. Effects of high-temperature thermal annealing on the electronic properties of In-Ga-Zn oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Li, Qin; Song, Zhong Xiao; Ma, Fei, E-mail: mafei@mail.xjtu.edu.cn, E-mail: liyhemail@gmail.com; Li, Yan Huai, E-mail: mafei@mail.xjtu.edu.cn, E-mail: liyhemail@gmail.com [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Xu, Ke Wei [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, Shaanxi 710049, China and Department of Physics and Opt-electronic Engineering, Xi' an University of Arts and Science, Xi' an, Shaanxi 710065 (China)

    2015-03-15

    Indium gallium zinc oxide (IGZO) thin films were deposited by radio-frequency magnetron sputtering at room-temperature. Then, thermal annealing was conducted to improve the structural ordering. X-ray diffraction and high-resolution transmission electron microscopy demonstrated that the as-deposited IGZO thin films were amorphous and crystallization occurred at 800 and 950 °C. As a result of crystallization at high temperature, the carrier concentration and the Hall mobility of IGZO thin films were sharply increased, which could be ascribed to the increased oxygen vacancies and improved structural ordering of the thin films.

  16. Three-dimensional high dose rate dosimetry of electron beams. A combined radiochromic film, EPR and calorimetric dosimetry

    International Nuclear Information System (INIS)

    Secerov, B.; Milosavljevic, B.H.; Bacic, G.; Belgrade Univ.

    2002-01-01

    Complete text of publication follows. Aim. To examine the suitability of radiochromic film (RCF) dosimeters in determining 3D dose distribution from a pulsed electron beam source by comparing their response with alanine EPR dosimetry and calorimetry. Experimental. A FWT-60 radiochromic films (Far West Technology Inc) were used while alanine films were home made. To obtain the dose vs. penetration depth relationship, a stack of 13 films separated by aluminium plates and/or alanine films was placed perpendicular to the electron beam (Febetron, 20 ns, 1.8 MeV, 10 12 Gy/s, dose range up to 100 kGy). RC films were calibrated using 60-Co source and Fricke dosimetry. The absorbance of irradiated films was measured using 2D microdensitometry. Calorimetry was performed with a homemade quasy-adiabatic aluminum calorimeter. Results and Discussion. Microdensitometry of films (5 x 5 cm) enabled the 3D mapping of the entire radiation field with in plane resolution of 0.12 mm. The total dose for each film was obtained by image segmentation to correct for the non-linear response of films. Integrated dose for the entire stack was in good agreement (within 5%) with total absorbed energy as determined with calorimetry. The dose distribution along the beam center was determined using alanine films (1 x 1 cm) and EPR spectroscopy, and again a good agreement with the dose determined by microdensitometry of the central portion of RC films. In conclusion, the results indicate that RC films can be used for determination of 3D dose distribution even at very high dose rates

  17. Adhesion-governed buckling of thin-film electronics on soft tissues

    Directory of Open Access Journals (Sweden)

    Bo Wang

    2016-01-01

    Full Text Available Stretchable/flexible electronics has attracted great interest and attention due to its potentially broad applications in bio-compatible systems. One class of these ultra-thin electronic systems has found promising and important utilities in bio-integrated monitoring and therapeutic devices. These devices can conform to the surfaces of soft bio-tissues such as the epidermis, the epicardium, and the brain to provide portable healthcare functionalities. Upon contractions of the soft tissues, the electronics undergoes compression and buckles into various modes, depending on the stiffness of the tissue and the strength of the interfacial adhesion. These buckling modes result in different kinds of interfacial delamination and shapes of the deformed electronics, which are very important to the proper functioning of the bio-electronic devices. In this paper, detailed buckling mechanics of these thin-film electronics on elastomeric substrates is studied. The analytical results, validated by experiments, provide a very convenient tool for predicting peak strain in the electronics and the intactness of the interface under various conditions.

  18. Electron scattering rate in epitaxial YBa2Cu3O7 superconducting films

    Science.gov (United States)

    Flik, M. I.; Zhang, Z. M.; Goodson, K. E.; Siegal, M. P.; Phillips, Julia M.

    1992-09-01

    This work determines the electron scattering rate in the a-b plane of epitaxial YBa2Cu3O7 films using two techniques. Infrared spectroscopy yields the scattering rate at temperatures of 10, 78, and 300 K by fitting reflectance data using thin-film optics and a model for the free-carrier conductivity. The scattering rate is also obtained using kinetic theory and an extrapolation of normal-state electrical resistivity data to superconducting temperatures based on the Bloch theory for the phonon-limited electrical resistivity of metals. The scattering rates determined using both techniques are in agreement and show that the electron mean free path in the a-b plane of YBa2Cu3O7 superconducting films is three to four times the coherence length. Hence YBa2Cu3O7 is pure but not in the extreme pure limit. An average defect interaction range of 4 nm is obtained using the defect density resulting from flux-pinning considerations.

  19. Density dependence of electron mobility in the accumulation mode for fully depleted SOI films

    Energy Technology Data Exchange (ETDEWEB)

    Naumova, O. V., E-mail: naumova@isp.nsc.ru; Zaitseva, E. G.; Fomin, B. I.; Ilnitsky, M. A.; Popov, V. P. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2015-10-15

    The electron mobility µ{sub eff} in the accumulation mode is investigated for undepleted and fully depleted double-gate n{sup +}–n–n{sup +} silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistors (MOSFET). To determine the range of possible values of the mobility and the dominant scattering mechanisms in thin-film structures, it is proposed that the field dependence of the mobility µ{sub eff} be replaced with the dependence on the density N{sub e} of induced charge carriers. It is shown that the dependences µ{sub eff}(N{sub e}) can be approximated by the power functions µ{sub eff}(N{sub e}) ∝ N{sub e}{sup -n}, where the exponent n is determined by the chargecarrier scattering mechanism as in the mobility field dependence. The values of the exponent n in the dependences µ{sub eff}(N{sub e}) are determined when the SOI-film mode near one of its surfaces varies from inversion to accumulation. The obtained results are explained from the viewpoint of the electron-density redistribution over the SOI-film thickness and changes in the scattering mechanisms.

  20. Celiac disease: understanding the gluten-free diet.

    Science.gov (United States)

    Bascuñán, Karla A; Vespa, María Catalina; Araya, Magdalena

    2017-03-01

    The only effective and safe treatment of celiac disease (CD) continues being strict exclusion of gluten for life, the so-called gluten-free diet (GFD). Although this treatment is highly successful, following strict GFD poses difficulties to patients in family, social and working contexts, deteriorating his/her quality of life. We aimed to review main characteristics of GFD with special emphasis on factors that may interfere with adherence to it. We conducted a search of various databases, such as PubMed, Google Scholar, Embase, and Scielo, with focus on key words such as "gluten-free diet", "celiac disease", "gluten" and "gluten-free diet adherence". Available literature has not reached definitive conclusions on the exact amount of gluten that is harmless to celiac patients, although international agreements establish cutoff points for gluten-free products and advise the use of clinical assessment to tailor the diet according to individual needs. Following GFD must include eliminating gluten as ingredient as well as hidden component and potential cross contamination in foods. There are numerous grains to substitute wheat but composition of most gluten-free products tends to include only a small number of them, especially rice. The diet must be not only free of gluten but also healthy to avoid nutrient, vitamins and minerals deficiencies or excess. Overweight/obesity frequency has increased among celiac patients so weight gain deserves attention during follow up. Nutritional education by a trained nutritionist is of great relevance to achieve long-term satisfactory health status and good compliance. A balanced GFD should be based on a combination of naturally gluten-free foods and certified processed gluten-free products. How to measure and improve adherence to GFD is still controversial and deserves further study.

  1. Hall effect measurements of high-quality M n3CuN thin films and the electronic structure

    Science.gov (United States)

    Matsumoto, Toshiki; Hatano, Takafumi; Urata, Takahiro; Iida, Kazumasa; Takenaka, Koshi; Ikuta, Hiroshi

    2017-11-01

    The physical properties of M n3CuN were studied using thin films. We found that an annealing process was very effective to improve the film quality, the key of which was the use of Ti that prevented the formation of oxide impurities. Using these high-quality thin films, we found strong strain dependence for the ferromagnetic transition temperature (TC) and a sign change of the Hall coefficient at TC. The analysis of Hall coefficient data revealed a sizable decrease of hole concentration and a large increase of electron mobility below TC, which is discussed in relation to the electronic structure of this material.

  2. Correlating electronic and geometric structures of organic films and interfaces by means of synchrotron radiation based techniques

    International Nuclear Information System (INIS)

    Yamane, Hiroyuki

    2013-01-01

    The electronic structure of organic thin films and interfaces plays a crucial role in the performance of optoelectronic devices using organic semiconductors, and is seriously dominated by the geometric film/interface structure due to the anisotropic spatial distribution of molecular orbitals. This paper briefly reviews the recent progress of the examination of correlating electronic structure and geometric structure of archetypal organic semiconductor thin films and interfaces by using spectroscopic experiments with synchrotron radiation such as angle-resolved photoelectron spectroscopy, x-ray absorption spectroscopy, and x-ray standing wave. (author)

  3. Optical properties of YbF3-CaF2 composite thin films deposited by electron-beam evaporation

    Science.gov (United States)

    Wang, Songlin; Mi, Gaoyuan; Zhang, Jianfu; Yang, Chongmin

    2018-03-01

    We studied electron-beam evaporated YbF3-CaF2 composite films on ZnS substrate at different deposition parameters. The optical properties of films have been fitted, the surface roughness have been measured by AFM. The results of experiments indicated that increased the refractive indices, extinction coefficients, and surface roughness at higher deposition rate. The refractive index of composite film deposited by electron-beam evaporation with assisted-ion source was obviously higher than it without assisted-ion source.

  4. Fabrication of bright and thin Zn₂SiO₄ luminescent film for electron beam excitation-assisted optical microscope.

    Science.gov (United States)

    Furukawa, Taichi; Kanamori, Satoshi; Fukuta, Masahiro; Nawa, Yasunori; Kominami, Hiroko; Nakanishi, Yoichiro; Sugita, Atsushi; Inami, Wataru; Kawata, Yoshimasa

    2015-07-13

    We fabricated a bright and thin Zn₂SiO₄ luminescent film to serve as a nanometric light source for high-spatial-resolution optical microscopy based on electron beam excitation. The Zn₂SiO₄ luminescent thin film was fabricated by annealing a ZnO film on a Si₃N₄ substrate at 1000 °C in N₂. The annealed film emitted bright cathodoluminescence compared with the as-deposited film. The film is promising for nano-imaging with electron beam excitation-assisted optical microscopy. We evaluated the spatial resolution of a microscope developed using this Zn₂SiO₄ luminescent thin film. This is the first report of the investigation and application of ZnO/Si₃N₄ annealed at a high temperature (1000 °C). The fabricated Zn₂SiO₄ film is expected to enable high-frame-rate dynamic observation with ultra-high resolution using our electron beam excitation-assisted optical microscopy.

  5. A study of growth and thermal dewetting behavior of ultra-thin gold films using transmission electron microscopy

    Directory of Open Access Journals (Sweden)

    Sudheer

    2017-07-01

    Full Text Available The growth and solid-state dewetting behavior of Au thin films (0.7 to 8.4 nm deposited on the formvar film (substrate by sputtering technique have been studied using transmission electron microscopy. The size and number density of the Au nanoparticles (NPs change with an increase in the film thickness (0.7 to 2.8 nm. Nearly spherical Au NPs are obtained for 6 nm show capability to be used as an irreversible temperature sensor with a sensitivity of ∼0.1 CAF/°C. It is observed that annealing affects the crystallinity of the Au grains in the films. The electron diffraction measurement also shows annealing induced morphological evolution in the percolated Au thin films (≥3 nm during solid-state dewetting and recrystallization of the grains.

  6. Fabrication of Nonvolatile Memory Effects in High-k Dielectric Thin Films Using Electron Irradiation

    International Nuclear Information System (INIS)

    Park, Chanrock; Cho, Daehee; Kim, Jeongeun; Hwang, Jinha

    2010-01-01

    Electron Irradiation can be applied towards nano-floating gate memories which are recognized as one of the next-generation nonvolatile memory semiconductors. NFGMs can overcome the preexisting limitations encountered in Dynamic Random Access Memories and Flash memories with the excellent advantages, i. e. high-density information storage, high response speed, high compactness, etc. The traditional nano-floating gate memories are fabricated through multi-layered nano structures of the dissimilar materials where the charge-trapping portions are sandwiched into the high-k dielectrics. However, this work reports the unique nonvolatile responses in single-layered high-k dielectric thin films if irradiated with highly accelerated electron beams. The implications of the electron irradiation will be discussed towards high-performance nano-floating gate memories

  7. Mechanical and thermal properties of commercial multilayer PET/PP film irradiated with electron-beam

    International Nuclear Information System (INIS)

    Ortiz, Angel V.; Nogueira, Beatriz R.; Oliveira, Vitor M.; Moura, Esperidiana A.B.

    2009-01-01

    The effects of electron-beam irradiation on mechanical and thermal properties, for one commercial flexible food packaging multilayer structure, were studied. The laminated poly(ethylene terephthalate) (PET)/ polypropylene (PP) structure was irradiated up to 60 kGy, using a 1.5 MeV electron beam accelerator, at room temperature in the presence of air. Mechanical properties showed significant changes (p < 0.05). In addition, the DSC analysis, after treatment, showed that the fusion enthalpy and crystallinity of the PET/PP structure components presented significant changes (p < 0.05) with the electron-beam radiation doses applied. It was observed an increase in PP crystallinity while the PET crystallinity decreases. Such decrease in PET crystallinity indicates the predominance of a cross-linking process on the irradiated PET layer; responsible for the increase in some mechanical properties of the studied film. (author)

  8. Hydride vapor phase GaN films with reduced density of residual electrons and deep traps

    International Nuclear Information System (INIS)

    Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Yugova, T. G.; Cox, H.; Helava, H.; Makarov, Yu.; Usikov, A. S.

    2014-01-01

    Electrical properties and deep electron and hole traps spectra are compared for undoped n-GaN films grown by hydride vapor phase epitaxy (HVPE) in the regular process (standard HVPE samples) and in HVPE process optimized for decreasing the concentration of residual donor impurities (improved HVPE samples). It is shown that the residual donor density can be reduced by optimization from ∼10 17  cm −3 to (2–5) × 10 14  cm −3 . The density of deep hole traps and deep electron traps decreases with decreased donor density, so that the concentration of deep hole traps in the improved samples is reduced to ∼5 × 10 13  cm −3 versus 2.9 × 10 16  cm −3 in the standard samples, with a similar decrease in the electron traps concentration

  9. Flexible Electronics: Integration Processes for Organic and Inorganic Semiconductor-Based Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Fábio F. Vidor

    2015-07-01

    Full Text Available Flexible and transparent electronics have been studied intensively during the last few decades. The technique establishes the possibility of fabricating innovative products, from flexible displays to radio-frequency identification tags. Typically, large-area polymeric substrates such as polypropylene (PP or polyethylene terephthalate (PET are used, which produces new requirements for the integration processes. A key element for flexible and transparent electronics is the thin-film transistor (TFT, as it is responsible for the driving current in memory cells, digital circuits or organic light-emitting devices (OLEDs. In this paper, we discuss some fundamental concepts of TFT technology. Additionally, we present a comparison between the use of the semiconducting organic small-molecule pentacene and inorganic nanoparticle semiconductors in order to integrate TFTs suitable for flexible electronics. Moreover, a technique for integration with a submicron resolution suitable for glass and foil substrates is presented.

  10. Spectroscopic studies of organic-inorganic composite film cured by low energy electron beam

    International Nuclear Information System (INIS)

    Mahathir Mohamed; Dahlan Mohd; Ibrahim Abdullah; Eda Yuhana Ariffin

    2009-01-01

    Liquid epoxidized natural rubber acrylate (LENRA) film was reinforced with silica particles formed in-situ via sol gel process. Combination of these two components produces organic-inorganic composites. Tetraethyl orthosilicate (TEOS) was used as precursor material for silica generation. Sol gel reactions was carried out at different concentrations of TEOS i.e. between 10 and 50 phr. The compounds that contain silica were crosslinked by electron beam. Structural properties studies were carried out by Fourier Transform Infrared Spectrometer (FTIR). It was found that miscibility between organic and inorganic components improved with the presence of silanol groups (Si-OH) and polar solvent i.e. THF, via hydrogen bonding formation between siloxane and LENRA. Morphology study by the transmission electron microscopy (TEM) and scanning electron microscopy (SEM) showed in-situ generated silica particles were homogenous and well dispersed at any concentrations of TEOS. (author)

  11. Structural and interfacial characteristics of thin (2 films grown by electron cyclotron resonance plasma oxidation on [100] Si substrates

    International Nuclear Information System (INIS)

    Nguyen, T.D.; Carl, D.A.; Hess, D.W.; Lieberman, M.A.; Gronsky, R.

    1991-04-01

    The feasibility of fabricating ultra-thin SiO 2 films on the order of a few nanometer thickness has been demonstrated. SiO 2 thin films of approximately 7 nm thickness have been produced by ion flux-controlled Electron Cyclotron Resonance plasma oxidation at low temperature on [100] Si substrates, in reproducible fashion. Electrical measurements of these films indicate that they have characteristics comparable to those of thermally grown oxides. The thickness of the films was determined by ellipsometry, and further confirmed by cross-sectional High-Resolution Transmission Electron Microscopy. Comparison between the ECR and the thermal oxide films shows that the ECR films are uniform and continuous over at least a few microns in lateral direction, similar to the thermal oxide films grown at comparable thickness. In addition, HRTEM images reveal a thin (1--1.5 nm) crystalline interfacial layer between the ECR film and the [100] substrate. Thinner oxide films of approximately 5 nm thickness have also been attempted, but so far have resulted in nonuniform coverage. Reproducibility at this thickness is difficult to achieve

  12. Thin-film encapsulation of organic electronic devices based on vacuum evaporated lithium fluoride as protective buffer layer

    Science.gov (United States)

    Peng, Yingquan; Ding, Sihan; Wen, Zhanwei; Xu, Sunan; Lv, Wenli; Xu, Ziqiang; Yang, Yuhuan; Wang, Ying; Wei, Yi; Tang, Ying

    2017-03-01

    Encapsulation is indispensable for organic thin-film electronic devices to ensure reliable operation and long-term stability. For thin-film encapsulating organic electronic devices, insulating polymers and inorganic metal oxides thin films are widely used. However, spin-coating of insulating polymers directly on organic electronic devices may destroy or introduce unwanted impurities in the underlying organic active layers. And also, sputtering of inorganic metal oxides may damage the underlying organic semiconductors. Here, we demonstrated that by utilizing vacuum evaporated lithium fluoride (LiF) as protective buffer layer, spin-coated insulating polymer polyvinyl alcohol (PVA), and sputtered inorganic material Er2O3, can be successfully applied for thin film encapsulation of copper phthalocyanine (CuPc)-based organic diodes. By encapsulating with LiF/PVA/LiF trilayer and LiF/Er2O3 bilayer films, the device lifetime improvements of 10 and 15 times can be achieved. These methods should be applicable for thin-film encapsulation of all kinds of organic electronic devices. Moisture-induced hole trapping, and Al top electrode oxidation are suggest to be the origins of current decay for the LiF/PVA/LiF trilayer and LiF/Er2O3 bilayer films encapsulated devices, respectively.

  13. Non-celiac gluten sensitivity: Time for sifting the grain

    Science.gov (United States)

    Elli, Luca; Roncoroni, Leda; Bardella, Maria Teresa

    2015-01-01

    In the last few years, a new nomenclature has been proposed for the disease induced by the ingestion of gluten, a protein present in wheat, rice, barley and oats. Besides celiac disease and wheat allergy, the most studied forms of gluten-related disorders characterized by an evident immune mechanism (autoimmune in celiac disease and IgE-mediated in wheat allergy), a new entity has been included, apparently not driven by an aberrant immune response: the non-celiac gluten sensitivity (NCGS). NCGS is characterized by a heterogeneous clinical picture with intestinal and extraintestinal symptoms arising after gluten ingestion and rapidly improving after its withdrawal from the diet. The pathogenesis of NCGS is largely unknown, but a mixture of factors such as the stimulation of the innate immune system, the direct cytotoxic effects of gluten, and probably the synergy with other wheat molecules, are clues for the complicated puzzle. In addition, the diagnostic procedures still remain problematic due to the absence of efficient diagnostic markers; thus, diagnosis is based upon the symptomatic response to a gluten-free diet and the recurrence of symptoms after gluten reintroduction with the possibility of an important involvement of a placebo effect. The temporary withdrawal of gluten seems a reasonable therapy, but the timing of gluten reintroduction and the correct patient management approach are have not yet been determined. PMID:26217073

  14. Optical and Morphological Properties of Electron-Beam Irradiated High-Density Thin Poly Ethylene Films

    International Nuclear Information System (INIS)

    Abdel-Hamid, H. M.; Fawzy, Y.H.A.; El-Sayed, S.M.

    2005-01-01

    Effects of surface morphology alterations on the optical properties of the high-density polyethylene (HDPE) films irradiated by 1.5 MeV electron beam has been investigated. The irradiation doses were conducted at the values: 30, 135, 295 and 540 kGy, respectively. The changes induced in HDPE involved: the creation of free radicals, the formation of chemical bonds i.e., intermolecular crosslinking and irreversible cleavage of bonds in the main chain, which resulted in the fragmentation of the molecules. An Ultraviolet-Visible Spectrophotometer (UV-VIS) and Scanning Electron Microscope (SEM) were used to characterize the changes. Because the crosslinking (induced by electron irradiation) limits the movability of the HDPE molecular chains, the optical energy gap was then subjected to a change. It decreased from 4.41 to 3.22 eV with an increasing electron dose up to 540 kGy. At a higher dose of irradiation (540 kGy), degradation of HDPE rather than crosslinking was raised. The irradiated HDPE films indicated that the crosslinking and degradation are likely to have an effect on their surface morphologies. The physical properties of polymeric materials can be modified by ionizing radiation in the form of gamma rays, X-rays and energetic electrons. High-energy electron beam is an especially useful tool in this regard (Cleland et al, 2003). Polymerizing, grafting, crosslinking and chain scission reactions can be initiated by irradiation. The results of such reactions can enhance the utility and value of commercial products. HDPE (CH2-CH2) has many attractive properties, such as an excellent chemical resistance, low friction and low moisture absorption

  15. The electronic structure of co-sputtered zinc indium tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Carreras, Paz; Antony, Aldrin; Bertomeu, Joan [Departament de Fisica Aplicada i Optica, Universitat de Barcelona, 08028 Barcelona (Spain); Gutmann, Sebastian [Department of Chemistry, University of South Florida, Tampa, Florida 33620 (United States); Schlaf, Rudy [Department of Electrical Engineering, University of South Florida, Tampa, Florida 33620 (United States)

    2011-10-01

    Zinc indium tin oxide (ZITO) transparent conductive oxide layers were deposited via radio frequency (RF) magnetron co-sputtering at room temperature. A series of samples with gradually varying zinc content was investigated. The samples were characterized with x-ray and ultraviolet photoemission spectroscopy (XPS, UPS) to determine the electronic structure of the surface. Valence and conduction bands maxima (VBM, CBM), and work function were determined. The experiments indicate that increasing Zn content results in films with a higher defect rate at the surface leading to the formation of a degenerately doped surface layer if the Zn content surpasses {approx}50%. Furthermore, the experiments demonstrate that ZITO is susceptible to ultraviolet light induced work function reduction, similar to what was earlier observed on ITO and TiO{sub 2} films.

  16. Thin films of amorphous nitrogenated carbon a-CN{sub x}: Electron transfer and surface reactivity

    Energy Technology Data Exchange (ETDEWEB)

    Tamiasso-Martinhon, P.; Cachet, H.; Debiemme-Chouvy, C.; Deslouis, C. [Universite Pierre et Marie Curie-Paris 6, Laboratoire Interfaces et Systemes Electrochimiques, CNRS, UPR15-LISE, 4 Place Jussieu, Paris F-75005 (France)

    2008-08-01

    The electrochemical behaviour of thin films of nitrogenated amorphous carbon a-CN{sub x} is similar to that of boron-doped diamond, with a wide potential window in aqueous media. They are elaborated by cathodic sputtering of a graphite target in an Ar-N{sub 2} active plasma for varying nitrogen contents, determined by XPS (0.06 {<=} x {<=} 0.39). Their electrochemical reactivity is sensitive to the surface state. The present study reports on the influence of electrochemical pre treatment on the electronic transfer rate of a fast redox system ferri-ferrocyanide, by focusing on the direction of the potential excursion. On the other hand, the role of both the pH and the potential on the interfacial capacitance in the presence of Na{sub 2}SO{sub 4} without redox species is documented. The results show up the sensitivity of the film surface to the electrochemical conditions. (author)

  17. Phase-selective staining of metal salt for scanning electron microscopy imaging of block copolymer film

    Energy Technology Data Exchange (ETDEWEB)

    Li, Jing Ze, E-mail: Lijinge@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronic and Solid-state Electronic, University of Electronic Science and Technology of China, Chengdu 610054 (China); State Key Laboratory of Polymer Materials Engineering (Sichuan University), Chengdu 610054 (China); Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumuqi 830011 (China); Wang, Ying; Hong Wang, Zhi; Mei, Di; Zou, Wei [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronic and Solid-state Electronic, University of Electronic Science and Technology of China, Chengdu 610054 (China); Min Chang, Ai [State Key Laboratory of Polymer Materials Engineering (Sichuan University), Chengdu 610054 (China); Wang, Qi [Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumuqi 830011 (China); Komura, Motonori; Ito, Kaori [Division of Integrated Molecular Engineering, Chemical Resources Laboratory, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Iyoda, Tomokazu, E-mail: Iyoda.t.aa@m.titech.ac.jp [Division of Integrated Molecular Engineering, Chemical Resources Laboratory, Tokyo Institute of Technology, Yokohama 226-8503 (Japan)

    2010-09-15

    Three metal salts, i.e., AgNO{sub 3}, HAuCl{sub 4}, and KCl, were proposed as novel staining reagents instead of traditional RuO{sub 4} and OsO{sub 4} labeled with expensive price and extreme toxicity for scanning electron microscopy (SEM) imaging of microphase separated block copolymer film. A simple and costless aqueous solution immersion procedure could ensure selective staining of the metal slat in specific phase of the nanostructured copolymer film, leading to a clear phase contrasted SEM image. The heavy metal salt has better staining effect, demonstrating stable and high signal-to-noise SEM image even at an acceleration voltage as high as 30 kV and magnification up to 250,000 times.

  18. Initial color development in radiochromic dye films after a short intense pulse of accelerated electrons

    International Nuclear Information System (INIS)

    Uribe, R.M.; Barcelo, M.; Rios, J.; McLaughlin, W.L.; Buenfil, A.E.

    1990-01-01

    The radiation response of different dye precursors in several host plastics has been investigated after a single short-pulse irradiation with 2.5-MeV electrons. It was observed that in most films the radiation-initiated color development proceeds mainly during the first 300 seconds, after such high dose-rate irradiation (∼ 10 12 Gy/s). Absorption spectra show that the main absorption band increases at the expense of a shorter-wavelength precursor absorption band, showing an isosbestic point approximately midway bwetwen the two absorption bands. It was found that a certain combination of dye precursor and host plastic (namely a polyamide containing an aromatic group) constitutes a film which shows a very fast increase in optical density of the main absorption band, making it suitable for immediate dosimetric analysis in very high dose-rate installations. (author)

  19. Calibration of screen-type X-ray films for electron beams

    International Nuclear Information System (INIS)

    Kobayashi, T.; Sato, Y.; Yoshida, K.; Tateyama, N.; Komori, Y.; Nakabayashi, T.; Oyamada, M.; Nishimura, J.

    2002-01-01

    In order to extract the maximum performance of the screen-type X-ray film for the detection of cascade showers in emulsion chambers, we examined the effect of the thickness of the phosphor screen by irradiation with 200 MeV electron beams. The observed data is in agreement with our analytical prediction of the radiative transfer of photons in a phosphor screen. If we use a combination of the specially prepared screen, HR16B, with a phosphor layer of 400 μm and a green-sensitive X-ray film, HA30, the detection threshold energy of cascade showers can be considerably lowered down to 140 GeV. (author)

  20. Calibration of screen-type X-ray films for electron beams

    CERN Document Server

    Kobayashi, T; Yoshida, K; Tateyama, N; Komori, Y; Nakabayashi, T; Oyamada, M; Nishimura, J

    2002-01-01

    In order to extract the maximum performance of the screen-type X-ray film for the detection of cascade showers in emulsion chambers, we examined the effect of the thickness of the phosphor screen by irradiation with 200 MeV electron beams. The observed data is in agreement with our analytical prediction of the radiative transfer of photons in a phosphor screen. If we use a combination of the specially prepared screen, HR16B, with a phosphor layer of 400 mu m and a green-sensitive X-ray film, HA30, the detection threshold energy of cascade showers can be considerably lowered down to 140 GeV. (author)

  1. Exploring electronic structure of one-atom thick polycrystalline graphene films: A nano angle resolved photoemission study

    Science.gov (United States)

    Avila, José; Razado, Ivy; Lorcy, Stéphane; Fleurier, Romain; Pichonat, Emmanuelle; Vignaud, Dominique; Wallart, Xavier; Asensio, María C.

    2013-01-01

    The ability to produce large, continuous and defect free films of graphene is presently a major challenge for multiple applications. Even though the scalability of graphene films is closely associated to a manifest polycrystalline character, only a few numbers of experiments have explored so far the electronic structure down to single graphene grains. Here we report a high resolution angle and lateral resolved photoelectron spectroscopy (nano-ARPES) study of one-atom thick graphene films on thin copper foils synthesized by chemical vapor deposition. Our results show the robustness of the Dirac relativistic-like electronic spectrum as a function of the size, shape and orientation of the single-crystal pristine grains in the graphene films investigated. Moreover, by mapping grain by grain the electronic dynamics of this unique Dirac system, we show that the single-grain gap-size is 80% smaller than the multi-grain gap recently reported by classical ARPES. PMID:23942471

  2. SU-F-I-70: Investigation of Gafchromic EBT3 Film Energy Dependence Using Proton, Photon, and Electron Beams

    International Nuclear Information System (INIS)

    Ferreira, C; Schnell, E; Ahmad, S; De La Fuente Herman, T

    2016-01-01

    Purpose: To investigate the energy dependence of Gafchromic EBT3 film over a range of clinically used proton, photon and electron energies. Methods: Proton beam energies of 117 and 204 MeV, corresponding respectively to ranges in water of 10 cm and 27 cm from a Mevion S250 double scatter system unit were used. Electron energies of 6 and 20 MeV and photon energies of 6 and 18 MV from a Varian Clinac 21EX Linac were used. Two pieces of film (5×5 cm"2) were irradiated sequentially for doses of 100, 500, and 1000 cGy for all energies and modalities. Films were placed on the central beam axis for a 10×10 cm"2 field size in the middle of spread out Bragg peak (SOBP) for proton and in respective dmax for photon and electron energies. Films were scanned on a flatbed Epson Expression 10000 XL scanner on the central region of the scanning window using 48-bit, 300 dpi, and landscape orientation after 48 hours post-irradiation of film to account for optical density (OD) stabilization. Film analysis of the red channel was performed using ImageJ 1.48v (National Institutes of Health). Results: The energy dependency of EBT3 among all energies and modalities for all doses studied was small within measurement uncertainties (1σ = ± 4.1%). The mean net OD in red channel for films receiving the same dose in the same energy modality had standard deviations within 0.9% for photons, 4.9% for electrons and 1.8% for protons. It was observed that film pieces were activated during proton irradiation, e.g., 7 mR/hr at surface after 30 minutes of irradiation, lasting for 2 hours post irradiation. Conclusion: EBT3 energy dependency was evaluated for clinically used proton, photon, and electron energies. The film self-activation may have contributed to fog and negligible dose.

  3. Compositional redistribution in alloy films under high-voltage electron microscope irradiation

    Science.gov (United States)

    Lam, Nghi Q.; Leaf, O. K.; Minkoff, M.

    1983-10-01

    The problem of nonequilibrium segregation in alloy films under high-voltage electron microscope (HVEM) irradiation at elevated temperatures is re-examined in the present work, taking into account the damage-rate gradients caused by radial variation in the electron flux. Axial and radial compositional redistributions in model solid solutions, representative of concentrated Ni-Cu, Ni-Al and Ni-Si alloys, were calculated as a function of time, temperature, and film thickness, using a kinetic theory of segregation in binary alloys. The numerical results were achieved by means of a new software package (DISPL2) for solving convection-diffusion-kinetics problems with general orthogonal geometries. It was found that HVEM irradiation-induced segregation in thin films consists of two stages. Initially, due to the proximity of the film surfaces as sinks for point defects, the usual axial segregation (to surfaces) occurs at relatively short irradiation times, and rapidly attains quasi-steady state. Then, radial segregation becomes more and more competitive, gradually affecting the kinetics of axial segregation. At a given temperature, the buildup time to steady state is much longer in the present situation than in the simple case of one-dimensional segregation with uniform defect production. Changes in the alloy composition occur in a much larger zone than the irradiated volume. As a result, the average alloy composition within the irradiated region can differ greatly from that of the unirradiated alloy. The present calculations may be useful in the interpretation of the kinetics of certain HVEM irradiation-induced processes in alloys.

  4. Self-Reported Prevalence of Gluten-Related Disorders and Adherence to Gluten-Free Diet in Colombian Adult Population

    Directory of Open Access Journals (Sweden)

    Francisco Cabrera-Chávez

    2016-01-01

    Full Text Available Background. Celiac disease seems to be rare in Colombians, but there are currently no data about the prevalence rates of symptomatic adverse reactions to gluten or adherence to gluten-free diet (GFD in this population. Aim. to evaluate the self-reported prevalence rates of adverse reactions to gluten, adherence to GFD, and gluten-related disorders at population level in Colombia. Methods. A self-administered questionnaire-based cross-sectional study was conducted in a population from Northwest Colombia. Results. The estimated prevalence rates were (95% CI 7.9% (6.5–9.6 and 5.3% (4.1–6.7 for adverse and recurrent adverse reactions to wheat/gluten, respectively, adherence to GFD 5.9% (4.7–7.4, wheat allergy 0.74% (0.3–1.4, and nonceliac gluten sensitivity 4.5% (3.5–5.8. There were no self-reported cases of celiac disease. Prevalence of self-reported physician-diagnosis of gluten-related disorders was 0.41% (0.17–0.96. Most respondents reported adherence to GFD without a physician-diagnosis of gluten-related disorders (97.2%. The proportion of gluten avoiders was 17.2% (15.2–19.5. Most of them did not report recurrent adverse reactions to wheat/gluten (87.0%. Conclusions. Nonceliac gluten sensitivity is rarely formally diagnosed in Colombia, but this population has the highest prevalence rate of adherence to GFD reported to date. Consequently, most respondents were avoiding wheat- and/or gluten-based products for reasons other than health-related symptoms.

  5. In vivo gluten challenge in coeliac disease

    Directory of Open Access Journals (Sweden)

    HJ Ellis

    2001-01-01

    Full Text Available In vivo gluten challenge has been used since the early 1950s to study the role of cereal fractions in celiac disease. While early studies relied on crude indicators of celiac toxicity, the advent of jejunal biopsy and sophisticated immunohistochemical techniques has allowed accurate studies to be performed. Studies to determine the nature of the cereal component that is toxic to patients with celiac disease have concentrated on wheat because of its nutritional importance. A number of in vitro studies indicated the presence of one or more celiac-activating epitopes with the N-terminus of the A-gliadin molecule. In vivo challenge with three synthetic peptides subsequently indicated the toxicity of a peptide corresponding to amino acids 31 to 49 of A-gliadin. In vivo gluten challenge is the gold standard for the assessment of celiac toxicity; however, jejunal biopsy is a relatively invasive procedure, thus, other methods have been investigated. Direct infusion of the rectum with gluten has been shown to result in an increase in mucosal intraepithelial lymphocytes, occurring only in celiac patients. This method has been used to study the celiac toxicity of gliadin subfractions. The in vitro technique of small intestinal biopsy organ culture is also a useful tool and appears to give the same results as in vivo challenge. The importance of tiny amounts of gliadin in the diet, such as that which occurs in wheat starch, has been studied by in vivo challenge; this technique has clarified the position of oats in the gluten-free diet. Several studies suggest that this cereal may be included in the diet of most adult celiac patients. Studies of the transport of gliadin across the enterocyte following ingestion or challenge suggest that gliadin may be metabolized by a different pathway in celiac disease. This could result in an abnormal presentation to the immune system, triggering a pathogenic rather than a tolerogenic response.

  6. Local, atomic-level elastic strain measurements of metallic glass thin films by electron diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Ebner, C. [Physics of Nanostructured Materials, Faculty of Physics, University of Vienna, Boltzmanngasse 5, 1090 Vienna (Austria); Sarkar, R. [Department of Materials Science and Engineering, School for Engineering of Matter Transport and Energy, Arizona State University, Tempe 85287 (United States); Rajagopalan, J. [Department of Materials Science and Engineering, School for Engineering of Matter Transport and Energy, Arizona State University, Tempe 85287 (United States); Department of Mechanical and Aerospace Engineering, School for Engineering of Matter Transport and Energy, Arizona State University, Tempe 85287 (United States); Rentenberger, C., E-mail: christian.rentenberger@univie.ac.at [Physics of Nanostructured Materials, Faculty of Physics, University of Vienna, Boltzmanngasse 5, 1090 Vienna (Austria)

    2016-06-15

    A novel technique is used to measure the atomic-level elastic strain tensor of amorphous materials by tracking geometric changes of the first diffuse ring of selected area electron diffraction patterns (SAD). An automatic procedure, which includes locating the centre and fitting an ellipse to the diffuse ring with sub-pixel precision is developed for extracting the 2-dimensional strain tensor from the SAD patterns. Using this technique, atomic-level principal strains from micrometre-sized regions of freestanding amorphous Ti{sub 0.45}Al{sub 0.55} thin films were measured during in-situ TEM tensile deformation. The thin films were deformed using MEMS based testing stages that allow simultaneous measurement of the macroscopic stress and strain. The calculated atomic-level principal strains show a linear dependence on the applied stress, and good correspondence with the measured macroscopic strains. The calculated Poisson’s ratio of 0.23 is reasonable for brittle metallic glasses. The technique yields a strain accuracy of about 1×10{sup −4} and shows the potential to obtain localized strain profiles/maps of amorphous thin film samples. - Highlights: • A TEM method to measure elastic strain in metallic glass films is proposed. • Method is based on tracking geometric changes in TEM diffraction patterns. • An automatic procedure is developed for extracting the local strain tensor. • Atomic-level strain in amorphous TiAl film was analysed during in-situ deformation. • Capability of the method to obtain micrometer scale strain profiles/maps is shown.

  7. Measurement of the secondary electron emission from CVD diamond films using phosphor screen detectors

    Science.gov (United States)

    Vaz, R.; May, P. W.; Fox, N. A.; Harwood, C. J.; Chatterjee, V.; Smith, J. A.; Horsfield, C. J.; Lapington, J. S.; Osbourne, S.

    2015-03-01

    Diamond-based photomultipliers have the potential to provide a significant improvement over existing devices due to diamond's high secondary electron yield and narrow energy distribution of secondary electrons which improves energy resolution creating extremely fast response times. In this paper we describe an experimental apparatus designed to study secondary electron emission from diamond membranes only 400 nm thick, observed in reflection and transmission configurations. The setup consists of a system of calibrated P22 green phosphor screens acting as radiation converters which are used in combination with photomultiplier tubes to acquire secondary emission yield data from the diamond samples. The superior signal voltage sampling of the phosphor screen setup compared with traditional Faraday Cup detection allows the variation in the secondary electron yield across the sample to be visualised, allowing spatial distributions to be obtained. Preliminary reflection and transmission yield data are presented as a function of primary electron energy for selected CVD diamond films and membranes. Reflection data were also obtained from the same sample set using a Faraday Cup detector setup. In general, the curves for secondary electron yield versus primary energy for both measurement setups were comparable. On average a 15-20% lower signal was recorded on our setup compared to the Faraday Cup, which was attributed to the lower photoluminescent efficiency of the P22 phosphor screens when operated at sub-kilovolt bias voltages.

  8. The processing of heteroepitaxial thin-film diamond for electronic applications

    International Nuclear Information System (INIS)

    McGrath, J.

    1998-09-01

    Thin film diamond is of particular interest because of its wide applicability, including its potential use in high temperature electronics. This thesis describes a study of some of the processing stages required to exploit thin film diamond as an electronic device. Initial experiments were carried out to optimise bi-metallic contact schemes on orientated diamond film using electrical measurements and chemical analysis. Temperature stability was also investigated and it was concluded that the most favourable ohmic contact scheme is aluminium-on-titanium. Further electrical measurements confirmed that the contribution of resistance made by the contacts themselves to the metal/diamond/metal system overall was acceptably low, specifically 6 Ω.cm 2 for an undoped diamond system and less than 3 x 10 -6 Ω.cm 2 for boron doped diamond. To improve the as-grown resistivity of diamond films, an oxygen/argon plasma etch process was applied. The input parameters of the plasma system were optimised to give the maximum achievable resistivity of 4 x 10 11 Ω.cm. This was attained using a statistical design procedure via analysis of resistivity and etch rate outputs. Having optimised post growth treatment and contact metallisation, undoped and doped orientated diamond films were characterised via voltage and temperature dependencies. It was concluded that the dominant charge transport mechanisms for undoped diamond, nitrogen and boron doped diamond were variable range hopping at low temperatures up to 523 K and grain boundary effects. At higher temperatures, valence or impurity band conduction appeared to be the probable mechanisms with activation energies of 0.23 eV for nitrogen doped diamond and 0.08 eV for boron doped diamond. Preliminary experiments electrical properties of diamond and initial results suggested the presence of a high density of recombination centres. The final stage of experimental research initiated a study of direct electron beam writing lithography to

  9. ZnO nanostructures as electron extraction layers for hybrid perovskite thin films

    Science.gov (United States)

    Nikolaidou, Katerina; Sarang, Som; Tung, Vincent; Lu, Jennifer; Ghosh, Sayantani

    Optimum interaction between light harvesting media and electron transport layers is critical for the efficient operation of photovoltaic devices. In this work, ZnO layers of different morphologies are implemented as electron extraction and transport layers for hybrid perovskite CH3NH3PbI3 thin films. These include nanowires, nanoparticles, and single crystalline film. Charge transfer at the ZnO/perovskite interface is investigated and compared through ultra-fast characterization techniques, including temperature and power dependent spectroscopy, and time-resolved photoluminescence. The nanowires cause an enhancement in perovskite emission, which may be attributed to increased scattering and grain boundary formation. However, the ZnO layers with decreasing surface roughness exhibit better electron extraction, as inferred from photoluminescence quenching, reduction in the number of bound excitons, and reduced exciton lifetime in CH3NH3PbI3 samples. This systematic study is expected to provide an understanding of the fundamental processes occurring at the ZnO-CH3NH3PbI3 interface and ultimately, provide guidelines for the ideal configuration of ZnO-based hybrid Perovskite devices. This research was supported by National Aeronautics and Space administration (NASA) Grant No: NNX15AQ01A.

  10. Stretchable Electronic Sensors of Nanocomposite Network Films for Ultrasensitive Chemical Vapor Sensing.

    Science.gov (United States)

    Yan, Hong; Zhong, Mengjuan; Lv, Ze; Wan, Pengbo

    2017-11-01

    A stretchable, transparent, and body-attachable chemical sensor is assembled from the stretchable nanocomposite network film for ultrasensitive chemical vapor sensing. The stretchable nanocomposite network film is fabricated by in situ preparation of polyaniline/MoS 2 (PANI/MoS 2 ) nanocomposite in MoS 2 suspension and simultaneously nanocomposite deposition onto prestrain elastomeric polydimethylsiloxane substrate. The assembled stretchable electronic sensor demonstrates ultrasensitive sensing performance as low as 50 ppb, robust sensing stability, and reliable stretchability for high-performance chemical vapor sensing. The ultrasensitive sensing performance of the stretchable electronic sensors could be ascribed to the synergistic sensing advantages of MoS 2 and PANI, higher specific surface area, the reliable sensing channels of interconnected network, and the effectively exposed sensing materials. It is expected to hold great promise for assembling various flexible stretchable chemical vapor sensors with ultrasensitive sensing performance, superior sensing stability, reliable stretchability, and robust portability to be potentially integrated into wearable electronics for real-time monitoring of environment safety and human healthcare. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Effect of doping on electronic states in B-doped polycrystalline CVD diamond films

    International Nuclear Information System (INIS)

    Elsherif, O S; Vernon-Parry, K D; Evans-Freeman, J H; May, P W

    2012-01-01

    High-resolution Laplace deep-level transient spectroscopy (LDLTS) and thermal admittance spectroscopy (TAS) have been used to determine the effect of boron (B) concentration on the electronic states in polycrystalline chemical vapour deposition diamond thin films grown on silicon by the hot filament method. A combination of high-resolution LDLTS and direct-capture cross-sectional measurements was used to investigate whether the deep electronic states present in the layers originated from point or extended defects. There was good agreement between data on deep electronic levels obtained from DLTS and TAS experiments. Two hole traps, E1 (0.29 eV) and E2 (0.53 eV), were found in a film with a boron content of 1 × 10 19 cm −3 . Both these levels and an additional level, E3 (0.35 eV), were found when the B content was increased to 4 × 10 19 cm −3 . Direct capture cross-sectional measurements of levels E1 and E2 show an unusual dependence on the fill-pulse duration which is interpreted as possibly indicating that the levels are part of an extended defect. The E3 level found in the more highly doped film consisted of two closely spaced levels, both of which show point-like defect characteristics. The E1 level may be due to B-related extended defects within the grain boundaries, whereas the ionization energy of the E2 level is in agreement with literature values from ab initio calculations for B–H complexes. We suggest that the E3 level is due to isolated B-related centres in bulk diamond. (paper)

  12. Electron transport properties of some new 4-tert-butylcalix[4]arene derivatives in thin films

    Energy Technology Data Exchange (ETDEWEB)

    Leontie, Liviu, E-mail: lleontie@uaic.ro [Faculty of Physics, Alexandru Ioan Cuza University of Iasi, B-dul Carol I, Nr. 11, 700506 Iasi (Romania); Danac, Ramona [Faculty of Chemistry, Alexandru Ioan Cuza University of Iasi, B-dul Carol I, Nr. 11, 700506 Iasi (Romania); Girtan, Mihaela [Laboratoire LPhiA, Angers University, 2, Bd. Lavoisier, 49045, Angers (France); Carlescu, Aurelian; Rambu, Alicia Petronela; Rusu, Gheorghe I. [Faculty of Physics, Alexandru Ioan Cuza University of Iasi, B-dul Carol I, Nr. 11, 700506 Iasi (Romania)

    2012-07-16

    Temperature dependences of electric conductivity and thermoelectric power of some recently synthesized organic compounds, 4-tert-butylcalix[4]arene derivatives, are studied. Thin-film samples (d = 0.10-0.40 {mu}m) spin-coated from chloroform solutions onto glass substrates were used. Organic films with reproducible electron transport properties can be obtained if, after deposition, they are submitted to a heat treatment within temperature range of 295-575 K. The studied polycrystalline compounds show typical p-type semiconductor behavior. The activation energy of the electric conduction ranges between 0.82 and 1.12 eV, while the ratio of charge carrier mobilities was found in the range of 0.83-0.94. Some correlations between semiconducting parameters and molecular structure of the organic compounds have been discussed. In the higher temperature ranges (T > 420 K), the electron transport in examined compounds can be interpreted in terms of the band gap representation model, while in the lower temperature range, the Mott's variable-range hopping conduction model was found to be appropriate. The investigated compounds hold promise for thermistor applications. - Highlights: Black-Right-Pointing-Pointer 4-tert-butylcalix(4)arene derivatives in thin films are p-type semiconductors. Black-Right-Pointing-Pointer The electron transfer is favored by their extended conjugation and packing capacity. Black-Right-Pointing-Pointer The band gap representation is suitable in the higher temperature range. Black-Right-Pointing-Pointer The Mott's VRH conduction model may be applied in the lower temperature range. Black-Right-Pointing-Pointer As-prepared organic compounds are promising for thermistor applications.

  13. Electron transport properties of some new 4-tert-butylcalix[4]arene derivatives in thin films

    International Nuclear Information System (INIS)

    Leontie, Liviu; Danac, Ramona; Girtan, Mihaela; Carlescu, Aurelian; Rambu, Alicia Petronela; Rusu, Gheorghe I.

    2012-01-01

    Temperature dependences of electric conductivity and thermoelectric power of some recently synthesized organic compounds, 4-tert-butylcalix[4]arene derivatives, are studied. Thin-film samples (d = 0.10–0.40 μm) spin-coated from chloroform solutions onto glass substrates were used. Organic films with reproducible electron transport properties can be obtained if, after deposition, they are submitted to a heat treatment within temperature range of 295–575 K. The studied polycrystalline compounds show typical p-type semiconductor behavior. The activation energy of the electric conduction ranges between 0.82 and 1.12 eV, while the ratio of charge carrier mobilities was found in the range of 0.83–0.94. Some correlations between semiconducting parameters and molecular structure of the organic compounds have been discussed. In the higher temperature ranges (T > 420 K), the electron transport in examined compounds can be interpreted in terms of the band gap representation model, while in the lower temperature range, the Mott's variable-range hopping conduction model was found to be appropriate. The investigated compounds hold promise for thermistor applications. - Highlights: ► 4-tert-butylcalix(4)arene derivatives in thin films are p-type semiconductors. ► The electron transfer is favored by their extended conjugation and packing capacity. ► The band gap representation is suitable in the higher temperature range. ► The Mott's VRH conduction model may be applied in the lower temperature range. ► As-prepared organic compounds are promising for thermistor applications.

  14. Quantitative microstructure characterization of self-annealed copper films with electron backscatter diffraction

    DEFF Research Database (Denmark)

    Pantleon, Karen; Gholinia, A.; Somers, Marcel A. J.

    2008-01-01

    Electron backscatter diffraction (EBSD) was applied to analyze cross sections of self-annealed copper electrodeposits, for which earlier the kinetics of self-annealing had been investigated by in-situ X-ray diffraction (XRD). The EBSD investigations on the grain size, grain boundary character...... and crystallographic texture of copper films with different thicknesses essentially supplement results from in-situ XRD. Twin relations between neighboring grains were identified from the orientation maps and the observed twin chains confirm multiple twinning in copper electrodeposits as the mechanism...

  15. Optical transitions and electronic interactions in self-assembled cobalt-fullerene mixture films

    Czech Academy of Sciences Publication Activity Database

    Lavrentiev, Vasyl; Chvostová, Dagmar; Lavrentieva, Inna; Vacík, Jiří; Daskal, Y.; Barchuk, M.; Rafaja, D.; Dejneka, Alexandr

    2017-01-01

    Roč. 50, č. 48 (2017), č. článku 485305. ISSN 0022-3727 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk LM2015088; GA MŠk LM2015056 Institutional support: RVO:68378271 ; RVO:61389005 Keywords : fullerene * cobalt * electronic interaction * optical absorption * mixture film Subject RIV: BM - Solid Matter Physics ; Magnetism; BO - Biophysics (FZU-D) OBOR OECD: Condensed matter physics (including formerly solid state physics , supercond.); Biophysics (FZU-D) Impact factor: 2.588, year: 2016

  16. Electronic Instability at High Flux-Flow Velocities in High-Tc Superconducting Films

    DEFF Research Database (Denmark)

    Doettinger, S. G.; Huebener, R. P.; Gerdemann, R.

    1994-01-01

    At high flux-flow velocities in type-II superconductors the nonequilibrium distribution of the quasiparticles leads to an electronic instability and an aburpt switching into a state with higher electric resistivity, as predicted by Larkin and Ovchinnikow (LO). We report the first obervation...... of this effect in a high-temperature superconductor, namely in epitaxial c-axis oriented films of YBa(2)Cu3O(7)-(delta). Using the LO therory, we have extracted from out results the inelastic quasiparticle scattering rare tau(in)(-1), which strongly decreases with decreasing temperature below T-c...

  17. Electron tunneling into superconducting indium and lead films containing the magnetic impurity manganese

    International Nuclear Information System (INIS)

    Tsang, J.K.

    1980-01-01

    Tunneling measurements of quench-condensed In-Mn and Pb-Mn alloy films were made. The results were compared with Shiba's theory of superconductors containing magnetic impurities. The localized excited impurity states predicted by Shiba's theory were observed in both alloys. In addition to s-wave scattering, it was necessary to include p- and d-wave scattering of the conduction electrons in the theory in order to explain the experimental data. Partial agreement between the theory and the experimental data was obtained using phase shifts from band calculations by A.B. Kunz. The results on In-Mn also agree with thermal conductivity data

  18. Sensitivity of PbSnTe:In films to the radiation of free electron laser

    Science.gov (United States)

    Akimov, A. N.; Epov, V. S.; Klimov, A. E.; Kubarev, V. V.; Paschin, N. S.

    2018-01-01

    The analysis of experimental data on the observation of photoresponse in narrow gap semiconductor Pb1-x Sn x Te:In films grown by the method of molecular beam epitaxy, exposing samples to the powerful radiation of the Novosibirsk free electron laser (wavelength range of about 70-240 μm) under different measurement conditions, is presented in the paper. Both the positive and negative photoconductivities were detected. In a magnetic field, the resonance-type photoconductivity was observed. The results are discussed within the framework of the model taking into account the existence of different capture levels in PbSnTe.

  19. Immunological characterization of the gluten fractions and their hydrolysates from wheat, rye and barley.

    Science.gov (United States)

    Rallabhandi, Prasad; Sharma, Girdhari M; Pereira, Marion; Williams, Kristina M

    2015-02-18

    Gluten proteins in wheat, rye and barley cause celiac disease, an autoimmune disorder of the small intestine, which affects approximately 1% of the world population. Gluten is comprised of prolamin and glutelin. Since avoidance of dietary gluten is the only option for celiac patients, a sensitive gluten detection and quantitation method is warranted. Most regulatory agencies have set a threshold of 20 ppm gluten in foods labeled gluten-free, based on the currently available ELISA methods. However, these methods may exhibit differences in gluten quantitation from different gluten-containing grains. In this study, prolamin and glutelin fractions were isolated from wheat, rye, barley, oats and corn. Intact and pepsin-trypsin (PT)-digested prolamin and glutelin fractions were used to assess their immunoreactivity and gluten recovery by three sandwich and two competitive ELISA kits. The Western blots revealed varied affinity of ELISA antibodies to gluten-containing grain proteins and no reactivity to oat and corn proteins. ELISA results showed considerable variation in gluten recoveries from both intact and PT-digested gluten fractions among different kits. Prolamin fractions showed higher gluten recovery compared to their respective glutelin fractions. Among prolamins, barley exhibited higher recovery compared to wheat and rye with most of the ELISA kits used. Hydrolysis resulted in reduced gluten recovery of most gluten fractions. These results suggest that the suitability of ELISA for accurate gluten quantitation is dependent upon various factors, such as grain source, antibody specificity, gluten proteins and the level of their hydrolysis in foods.

  20. Highly Conductive Transparent and Flexible Electrodes Including Double-Stacked Thin Metal Films for Transparent Flexible Electronics.

    Science.gov (United States)

    Han, Jun Hee; Kim, Do-Hong; Jeong, Eun Gyo; Lee, Tae-Woo; Lee, Myung Keun; Park, Jeong Woo; Lee, Hoseung; Choi, Kyung Cheol

    2017-05-17

    To keep pace with the era of transparent and deformable electronics, electrode functions should be improved. In this paper, an innovative structure is suggested to overcome the trade-off between optical and electrical properties that commonly arises with transparent electrodes. The structure of double-stacked metal films showed high conductivity (electronics are expected.

  1. Influence of annealing temperature on Raman and photoluminescence spectra of electron beam evaporated TiO₂ thin films.

    Science.gov (United States)

    Vishwas, M; Narasimha Rao, K; Chakradhar, R P S

    2012-12-01

    Titanium dioxide (TiO(2)) thin films were deposited on fused quartz substrates by electron beam evaporation method at room temperature. The films were annealed at different temperatures in ambient air. The surface morphology/roughness at different annealing temperatures were analyzed by atomic force microscopy (AFM). The crystallinity of the film has improved with the increase of annealing temperature. The effect of annealing temperature on optical, photoluminescence and Raman spectra of TiO(2) films were investigated. The refractive index of TiO(2) films were studied by envelope method and reflectance spectra and it is observed that the refractive index of the films was high. The photoluminescence intensity corresponding to green emission was enhanced with increase of annealing temperature. The peaks in Raman spectra depicts that the TiO(2) film is of anatase phase after annealing at 300°C and higher. The films show high refractive index, good optical quality and photoluminescence characteristics suggest that possible usage in opto-electronic and optical coating applications. Copyright © 2012 Elsevier B.V. All rights reserved.

  2. Surface and electron emission properties of hydrogen-free diamond-like carbon films investigated by atomic force microscopy

    International Nuclear Information System (INIS)

    Liu Dongping; Zhang, Sam; Ong, S.-E.; Benstetter, Guenther; Du Hejun

    2006-01-01

    In this study, we have deposited hydrogen-free diamond-like carbon (DLC) films by using DC magnetron sputtering of graphite target at various r.f. bias voltages. Surface and nanoscale emission properties of these DLC films have been investigated using a combination of atomic force microscopy (AFM)-based nanowear tests and conducting-AFM, by simultaneously measuring the topography and the conductivity of the samples. Nanowear tests show that these DLC films are covered with the thin (1.5-2.0 nm) graphite-like layers at surfaces. Compared to the film bulk structure, the graphite-like surface layers are more conductive. The graphite-like surface layers significantly influence the electron emission properties of these films. Low-energy carbon species can be responsible for the formation of graphite-like surface layers. Nanoscale electron emission measurements have revealed the inhomogeneous emission nature of these films. The low-field emission from these films can be attributed to the existence of sp 2 -configured nanoclusters inside the films

  3. The uniformity study of non-oxide thin film at device level using electron energy loss spectroscopy

    Science.gov (United States)

    Li, Zhi-Peng; Zheng, Yuankai; Li, Shaoping; Wang, Haifeng

    2018-05-01

    Electron energy loss spectroscopy (EELS) has been widely used as a chemical analysis technique to characterize materials chemical properties, such as element valence states, atoms/ions bonding environment. This study provides a new method to characterize physical properties (i.e., film uniformity, grain orientations) of non-oxide thin films in the magnetic device by using EELS microanalysis on scanning transmission electron microscope. This method is based on analyzing white line ratio of spectra and related extended energy loss fine structures so as to correlate it with thin film uniformity. This new approach can provide an effective and sensitive method to monitor/characterize thin film quality (i.e., uniformity) at atomic level for thin film development, which is especially useful for examining ultra-thin films (i.e., several nanometers) or embedded films in devices for industry applications. More importantly, this technique enables development of quantitative characterization of thin film uniformity and it would be a remarkably useful technique for examining various types of devices for industrial applications.

  4. Direct nanofabrication and transmission electron microscopy on a suite of easy-to-prepare ultrathin film substrates

    International Nuclear Information System (INIS)

    Allred, Daniel B.; Zin, Melvin T.; Ma, Hong; Sarikaya, Mehmet; Baneyx, Francois; Jen, Alex K.-Y.; Schwartz, Daniel T.

    2007-01-01

    A high-yield, easy to master method for preparing electron transparent metal, oxide, and carbon ultrathin film substrates suitable for direct nano/micro-fabrication and transmission electron microscopy (TEM) is presented. To demonstrate the versatility of these substrates for fabrication processes, we use e-beam lithography, self-assembled colloidal and protein templates, and microcontact printing to create patterned masks for subsequent electrodeposition of two dimensional and three dimensional structures. The electrodeposited structures range in scale from a few nanometers to a few micrometers in characteristic dimensions. Because fabrication occurs directly on ultrathin films, TEM analysis of the resulting materials and buried interfaces is straightforward without any destructive sample preparation. We show that all the normal TEM analytical methods (imaging, diffraction, electron and X-ray spectroscopies) are compatible with the fabricated structures and the thin film substrates. These electron transparent substrates have largely rendered the need for TEM sample preparation on fabricated structures obsolete in our lab

  5. Van der Waals epitaxy of functional MoO{sub 2} film on mica for flexible electronics

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Chun-Hao [Department of Electrical Engineering, National Tsing Hua University, 30013 Hsinchu, Taiwan (China); Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Lin, Jheng-Cyuan [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Liu, Heng-Jui; Do, Thi Hien [Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Zhu, Yuan-Min; Zhan, Qian [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Ha, Thai Duy; Juang, Jenh-Yih [Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan (China); He, Qing [Department of Physics, Durham University, Durham DH1 3LE (United Kingdom); Arenholz, Elke [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Chiu, Po-Wen, E-mail: pwchiu@ee.nthu.edu.tw [Department of Electrical Engineering, National Tsing Hua University, 30013 Hsinchu, Taiwan (China); Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan (China); Chu, Ying-Hao, E-mail: yhc@nctu.edu.tw [Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan (China)

    2016-06-20

    Flexible electronics have a great potential to impact consumer electronics and with that our daily life. Currently, no direct growth of epitaxial functional oxides on commercially available flexible substrates is possible. In this study, in order to address this challenge, muscovite, a common layered oxide, is used as a flexible substrate that is chemically similar to typical functional oxides. We fabricated epitaxial MoO{sub 2} films on muscovite via pulsed laser deposition technique. A combination of X-ray diffraction and transmission electron microscopy confirms van der Waals epitaxy of the heterostructures. The electrical transport properties of MoO{sub 2} films are similar to those of the bulk. Flexible or free-standing MoO{sub 2} thin film can be obtained and serve as a template to integrate additional functional oxide layers. Our study demonstrates a remarkable concept to create flexible electronics based on functional oxides.

  6. Optical properties of zirconium oxynitride films: The effect of composition, electronic and crystalline structures

    Energy Technology Data Exchange (ETDEWEB)

    Carvalho, P. [Centro de Física, Universidade do Minho, 4710-057 Braga (Portugal); Borges, J., E-mail: joelborges@fisica.uminho.pt [Centro de Física, Universidade do Minho, 4710-057 Braga (Portugal); Department of Control Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague, Technická 2, Prague 6 (Czech Republic); Rodrigues, M.S. [Centro de Física, Universidade do Minho, 4710-057 Braga (Portugal); Barradas, N.P. [Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 (km 139,7), 2695-066 Bobadela LRS (Portugal); Alves, E. [Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, Av. Rovisco Pais, 1049-001 Lisbon (Portugal); Espinós, J.P.; González-Elipe, A.R. [Instituto de Ciencia de Materiales de Sevilla (CSIC-University Sevilla), Avda. Américo Vespucio 49, 41092 Sevilla (Spain); Cunha, L.; Marques, L.; Vasilevskiy, M.I.; Vaz, F. [Centro de Física, Universidade do Minho, 4710-057 Braga (Portugal)

    2015-12-15

    Highlights: • Optical behaviour of ZrO{sub x}N{sub y} films were correlated with structural properties. • A continuous depopulation of the d-band and an opening of an energy gap was observed. • Drude–Lorentz parameters changed for the metallic samples. • Optical bandgap of the films increases with non-metallic elements incorporation. - Abstract: This work is devoted to the investigation of zirconium oxynitride (ZrO{sub x}N{sub y}) films with varied optical responses prompted by the variations in their compositional and structural properties. The films were prepared by dc reactive magnetron sputtering of Zr, using Ar and a reactive gas mixture of N{sub 2} + O{sub 2} (17:3). The colour of the films changed from metallic-like, very bright yellow-pale and golden yellow, for low gas flows to red-brownish for intermediate gas flows. Associated to this colour change there was a significant decrease of brightness. With further increase of the reactive gas flow, the colour of the samples changed from red-brownish to dark blue or even to interference colourations. The variations in composition disclosed the existence of four different zones, which were found to be closely related with the variations in the crystalline structure. XRD analysis revealed the change from a B1 NaCl face-centred cubic zirconium nitride-type phase for films prepared with low reactive gas flows, towards a poorly crystallized over-stoichiometric nitride phase, which may be similar to that of Zr{sub 3}N{sub 4} with some probable oxygen inclusions within nitrogen positions, for films prepared with intermediate reactive gas flows. For high reactive gas flows, the films developed an oxynitride-type phase, similar to that of γ-Zr{sub 2}ON{sub 2} with some oxygen atoms occupying some of the nitrogen positions, evolving to a ZrO{sub 2} monoclinic type structure within the zone where films were prepared with relatively high reactive gas flows. The analysis carried out by reflected electron energy

  7. Electronic structure of the L-cysteine films on dental alloys studied by ultraviolet photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Ogawa, K; Takahashi, K; Azuma, J; Kamada, M; Tsujibayashi, T; Ichimiya, M

    2013-01-01

    The valence electronic structures of the dental alloys, type 1, type 3, K14, and MC12 and their interaction with L-cysteine have been studied by ultraviolet photoelectron spectroscopy with synchrotron radiation. It was found that the electronic structures of the type-1 and type-3 dental alloys are similar to that of polycrystalline Au, while that of the K14 dental alloy is much affected by Cu. The electronic states of the MC12 dental alloy originate dominantly from Cu 3d states and Pd 4d states around the top of the valence bands, while the 4∼7-eV electronic structure of MC12 originates from the Ag 4d states. The peak shift and the change in shape due to alloying are observed in all the dental alloys. For the L-cysteine thin films, new peak or structure observed around 2 eV on all the dental alloys is suggested to be due to the bonding of S 3sp orbitals with the dental alloy surfaces. The Cu-S bond as well as the Au-S and Au-O bonds may cause the change in the electronic structure of the L-cysteine on type 1, type 3 and K14. For MC12, the interaction with L-cysteine may be dominantly due to the Pd-S, Cu-S, and Ag-O bonds, while the contribution of the Ag-S bond is small.

  8. Charge dynamics in aluminum oxide thin film studied by ultrafast scanning electron microscopy.

    Science.gov (United States)

    Zani, Maurizio; Sala, Vittorio; Irde, Gabriele; Pietralunga, Silvia Maria; Manzoni, Cristian; Cerullo, Giulio; Lanzani, Guglielmo; Tagliaferri, Alberto

    2018-04-01

    The excitation dynamics of defects in insulators plays a central role in a variety of fields from Electronics and Photonics to Quantum computing. We report here a time-resolved measurement of electron dynamics in 100 nm film of aluminum oxide on silicon by Ultrafast Scanning Electron Microscopy (USEM). In our pump-probe setup, an UV femtosecond laser excitation pulse and a delayed picosecond electron probe pulse are spatially overlapped on the sample, triggering Secondary Electrons (SE) emission to the detector. The zero of the pump-probe delay and the time resolution were determined by measuring the dynamics of laser-induced SE contrast on silicon. We observed fast dynamics with components ranging from tens of picoseconds to few nanoseconds, that fits within the timescales typical of the UV color center evolution. The surface sensitivity of SE detection gives to the USEM the potential of applying pump-probe investigations to charge dynamics at surfaces and interfaces of current nano-devices. The present work demonstrates this approach on large gap insulator surfaces. Copyright © 2018 Elsevier B.V. All rights reserved.

  9. Is it gluten-free? Relationship between self-reported gluten-free diet adherence and knowledge of gluten content of foods.

    Science.gov (United States)

    Silvester, Jocelyn A; Weiten, Dayna; Graff, Lesley A; Walker, John R; Duerksen, Donald R

    2016-01-01

    To assess the relationship between self-reported adherence to a gluten-free diet (GFD) and the ability to determine correctly the appropriateness of particular foods in a GFD. Persons with celiac disease were recruited through clinics and support groups. Participants completed a questionnaire with items related to GFD information sources, gluten content of 17 common foods (food to avoid, food allowed, and food to question), GFD adherence, and demographic characteristics. Diagnosis was self-reported. The 82 respondents (88% female) had a median of 6 y GFD experience. Most (55%) reported strict adherence, 18% reported intentional gluten consumption and 21% acknowledged rare unintentional gluten consumption. Cookbooks, advocacy groups, and print media were the most commonly used GFD information sources (85-92%). No participant identified correctly the gluten content of all 17 foods; only 30% identified at least 14 foods correctly. The median score on the Gluten-Free Diet Knowledge Scale (GFD-KS) was 11.5 (interquartile ratio, 10-13). One in five incorrect responses put the respondent at risk of consuming gluten. GFD-KS scores did not correlate with self-reported adherence or GFD duration. Patient advocacy group members scored significantly higher on the GFD-KS than non-members (12.3 versus 10.6; P gluten ingestion overestimate GFD adherence. Individuals who believe they are following a GFD are not readily able to correctly identify foods that are GF, which suggests ongoing gluten consumption may be occurring, even among patients who believe they are "strictly" adherent. The role of patient advocacy groups and education to improve outcomes through improved adherence to a GFD requires further research. Copyright © 2016 Elsevier Inc. All rights reserved.

  10. Annealing effects on electron-beam evaporated Al2O3 films

    International Nuclear Information System (INIS)

    Shang Shuzhen; Chen Lei; Hou Haihong; Yi Kui; Fan Zhengxiu; Shao Jianda

    2005-01-01

    The effects of post-deposited annealing on structure and optical properties of electron-beam evaporated Al 2 O 3 single layers were investigated. The films were annealed in air for 1.5 h at different temperatures from 250 to 400 deg. C. The optical constants and cut-off wavelength were deduced. Microstructure of the samples was characterized by X-ray diffraction (XRD). Profile and surface roughness measurement instrument was used to determine the rms surface roughness. It was found that the cut-off wavelength shifted to short wavelength as the annealing temperature increased and the total optical loss decreased. The film structure remained amorphous even after annealing at 400 deg. C temperature and the samples annealed at higher temperature had the higher rms surface roughness. The decreasing total optical loss with annealing temperature was attributed to the reduction of absorption owing to oxidation of the film by annealing. Guidance to reduce the optical loss of excimer laser mirrors was given

  11. Annealing effects on electron-beam evaporated Al 2O 3 films

    Science.gov (United States)

    Shuzhen, Shang; Lei, Chen; Haihong, Hou; Kui, Yi; Zhengxiu, Fan; Jianda, Shao

    2005-04-01

    The effects of post-deposited annealing on structure and optical properties of electron-beam evaporated Al 2O 3 single layers were investigated. The films were annealed in air for 1.5 h at different temperatures from 250 to 400 °C. The optical constants and cut-off wavelength were deduced. Microstructure of the samples was characterized by X-ray diffraction (XRD). Profile and surface roughness measurement instrument was used to determine the rms surface roughness. It was found that the cut-off wavelength shifted to short wavelength as the annealing temperature increased and the total optical loss decreased. The film structure remained amorphous even after annealing at 400 °C temperature and the samples annealed at higher temperature had the higher rms surface roughness. The decreasing total optical loss with annealing temperature was attributed to the reduction of absorption owing to oxidation of the film by annealing. Guidance to reduce the optical loss of excimer laser mirrors was given.

  12. Application of the Sunna dosimeter film in gamma and electron beam radiation processing

    DEFF Research Database (Denmark)

    Kovács, A.; Baranyai, M.; Wojnárovits, L.

    2000-01-01

    The OSL (optically stimulated luminescence) based Sunna film containing a microcrystalline dispersion of LIF in a polymer matrix has been recently introduced for high-dose dosimetry. Our previous investigations revealed the applicability of the system in the dose range of 0.01-100 kGy, but irradi...... significant in the case of OSL analysis for doses above 5 kGy. The applicability of two types of Sunna films in electron and gamma radiation processing is discussed in the paper. (C) 2000 Elsevier Science Ltd. All rights reserved.......The OSL (optically stimulated luminescence) based Sunna film containing a microcrystalline dispersion of LIF in a polymer matrix has been recently introduced for high-dose dosimetry. Our previous investigations revealed the applicability of the system in the dose range of 0.01-100 k......Gy, but irradiation temperature and dose rate effects above 5 kGy reduced its usefulness. The recent discovery of the use of spectrophotometric analysis in the UV range for measuring doses above 5 kGy is a suitable option, while the OSL analysis can be applied for measuring lower doses due to the lack of temperature...

  13. Electron beam induced graft-polymerization of methyl methacrylate onto polyethylene films at high dose rates

    International Nuclear Information System (INIS)

    Mori, Koji; Koshiishi, Kenji; Masuhara, Ken-ichi

    1991-01-01

    Electron beam induced graft-polymerization by the mutual irradiation technique of methyl methacrylate on the surface of low density polyethylene films (LD) and high density polyethylene films (HD) was investigated at high dose rates over 10 Mrad per second. Graft-polymerization mechanisms were discussed on the basis of O 2 permeability, tensile strength, elongation at break, and surface tension of the grafted films. As the degree of grafting increased, the O 2 permeability of LD decreased, while that of HD little changed at the grafting up to 4 ∼ 5 %. This indicates that the grafting occurred in the amorphous regions for LD and occurred in the amorphous regions in the neighborhood of crystalline regions for HD. For HD, when the degree of the grafting surpassed 4 ∼ 5 %, the O 2 permeability, tensile strength, elongation at break, and surface tension decreased with an increase in the degree of grafting. It was assumed that rapid grafting in the amorphous regions in the neighborhood of crystalline regions caused the increase in local temperature by the heat of polymerization, and the viscosity of polyethylene in the amorphous regions decreased with an increase in temperature. As a result, the graft chains, which formed micro domain structure, condensed in the amorphous regions and the domain increased in size. (author)

  14. Preparation of TiO2-based nanotubes/nanoparticles composite thin film electrodes for their electron transport properties

    International Nuclear Information System (INIS)

    Zhao, Wanyu; Fu, Wuyou; Chen, Jingkuo; Li, Huayang; Bala, Hari; Wang, Xiaodong; Sun, Guang; Cao, Jianliang; Zhang, Zhanying

    2015-01-01

    The composite thin film electrodes were prepared with one-dimensional (1D) TiO 2 -B nanotubes (NTs) and zero-dimensional TiO 2 nanoparticles (NPs) based on different weight ratios. The electron transport properties of the NTs/NPs composite thin film electrodes applied for dye-sensitized solar cells had been investigated systematically. The results indicated that although the amount of dye adsorption decreased slightly, the devices with the NTs/NPs composite thin film electrodes could obtain higher open-circuit voltage and overall conversion efficiency compared to devices with pure TiO 2 NPs electrodes by rational tuning the weight ratio of TiO 2 -B NTs and TiO 2 NPs. When the weight ratio of TiO 2 -B NTs in the NTs/NPs composite thin film electrodes increased, the density of states and recombination rate decreased. The 1D structure of TiO 2 -B NTs can provide direct paths for electron transport, resulting in higher electron lifetime, electron diffusion coefficient and electron diffusion length. The composite thin film electrodes possess the merits of the rapid electron transport of TiO 2 -B NTs and the high surface area of TiO 2 NPs, which has great applied potential in the field of photovoltaic devices. - Highlights: • The composite thin film electrodes (CTFEs) were prepared with nanotubes and nanoparticles. • The CTFEs possess the rapid electron transport and high surface area. • The CTFEs exhibit lower recombination rate and longer electron life time. • The CTFEs have great applied potential in the field of photovoltaic devices

  15. Fructan, Rather Than Gluten, Induces Symptoms in Patients With Self-Reported Non-Celiac Gluten Sensitivity.

    Science.gov (United States)

    Skodje, Gry I; Sarna, Vikas K; Minelle, Ingunn H; Rolfsen, Kjersti L; Muir, Jane G; Gibson, Peter R; Veierød, Marit B; Henriksen, Christine; Lundin, Knut E A

    2018-02-01

    Non-celiac gluten sensitivity is characterized by symptom improvement after gluten withdrawal in absence of celiac disease. The mechanisms of non-celiac gluten sensitivity are unclear, and there are no biomarkers for this disorder. Foods with gluten often contain fructans, a type of fermentable oligo-, di-, monosaccharides and polyols. We aimed to investigate the effect of gluten and fructans separately in individuals with self-reported gluten sensitivity. We performed a double-blind crossover challenge of 59 individuals on a self-instituted gluten-free diet, for whom celiac disease had been excluded. The study was performed at Oslo University Hospital in Norway from October 2014 through May 2016. Participants were randomly assigned to groups placed on diets containing gluten (5.7 g), fructans (2.1 g), or placebo, concealed in muesli bars, for 7 days. Following a minimum 7-day washout period (until the symptoms induced by the previous challenge were resolved), participants crossed over into a different group, until they completed all 3 challenges (gluten, fructan, and placebo). Symptoms were measured by Gastrointestinal Symptom Rating Scale Irritable Bowel Syndrome (GSRS-IBS) version. A linear mixed model for analysis was used. Overall GSRS-IBS scores differed significantly during gluten, fructan, and placebo challenges; mean values were 33.1 ± 13.3, 38.6 ± 12.3, and 34.3 ± 13.9, respectively (P = .04). Mean scores for GSRS-IBS bloating were 9.3 ± 3.5, 11.6 ± 3.5, and 10.1 ± 3.7, respectively, during the gluten, fructan, and placebo challenges (P = .004). The overall GSRS-IBS score for participants consuming fructans was significantly higher than for participants consuming gluten (P = .049), as was the GSRS bloating score (P = .003). Thirteen participants had the highest overall GSRS-IBS score after consuming gluten, 24 had the highest score after consuming fructan, and 22 had the highest score after consuming placebo. There was no difference in GSRS

  16. Observation of surface discharge on polymer films irradiated by electron beam

    International Nuclear Information System (INIS)

    Komatsubara, Minoru; Ishii, Masaru; Tsumura, Eiji.

    1992-01-01

    The surface discharge on dielectric surfaces of a spacecraft caused by spacecraft charging is simulated by using a high vacuum chamber equipped with an electron beam gun. Fluoroethylene-propylene (FEP) and polyethleneterephthalate (PET) films frequently employed as thermal control materials are irradiated by an electron beam until surface discharges occur, then the spectrum and waveform of emitted light of discharge, together with the current waveform of the discharge and the mass spectrum of the gas in the vacuum chamber are measured. In the range of 300 through 700 nm of the wavelength, light emission from CN radicals, C 2 radicals, CH radicals and hydrogen atoms are detected. From this result, it is suggested that water molecules in the residual gas and molecules in the structure of the specimen contribute the light emission. The spectroscopic observation of the light emission suggests that the discharge energy is concentrated on PET more than that on FEP. (author)

  17. Reinventing solid state electronics: Harnessing quantum confinement in bismuth thin films

    Science.gov (United States)

    Gity, Farzan; Ansari, Lida; Lanius, Martin; Schüffelgen, Peter; Mussler, Gregor; Grützmacher, Detlev; Greer, J. C.

    2017-02-01

    Solid state electronics relies on the intentional introduction of impurity atoms or dopants into a semiconductor crystal and/or the formation of junctions between different materials (heterojunctions) to create rectifiers, potential barriers, and conducting pathways. With these building blocks, switching and amplification of electrical currents and voltages are achieved. As miniaturisation continues to ultra-scaled transistors with critical dimensions on the order of ten atomic lengths, the concept of doping to form junctions fails and forming heterojunctions becomes extremely difficult. Here, it is shown that it is not needed to introduce dopant atoms nor is a heterojunction required to achieve the fundamental electronic function of current rectification. Ideal diode behavior or rectification is achieved solely by manipulation of quantum confinement using approximately 2 nm thick films consisting of a single atomic element, the semimetal bismuth. Crucially for nanoelectronics, this approach enables room temperature operation.

  18. Hot-Electron Intraband Luminescence from Single Hot Spots in Noble-Metal Nanoparticle Films

    Science.gov (United States)

    Haug, Tobias; Klemm, Philippe; Bange, Sebastian; Lupton, John M.

    2015-08-01

    Disordered noble-metal nanoparticle films exhibit highly localized and stable nonlinear light emission from subdiffraction regions upon illumination by near-infrared femtosecond pulses. Such hot spot emission spans a continuum in the visible and near-infrared spectral range. Strong plasmonic enhancement of light-matter interaction and the resulting complexity of experimental observations have prevented the development of a universal understanding of the origin of light emission. Here, we study the dependence of emission spectra on excitation irradiance and provide the most direct evidence yet that the continuum emission observed from both silver and gold nanoparticle aggregate surfaces is caused by recombination of hot electrons within the conduction band. The electron gas in the emitting particles, which is effectively decoupled from the lattice temperature for the duration of emission, reaches temperatures of several thousand Kelvin and acts as a subdiffraction incandescent light source on subpicosecond time scales.

  19. High electron mobility in Ga(In)NAs films grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Miyashita, Naoya; Ahsan, Nazmul; Monirul Islam, Muhammad; Okada, Yoshitaka; Inagaki, Makoto; Yamaguchi, Masafumi

    2012-01-01

    We report the highest mobility values above 2000 cm 2 /Vs in Si doped GaNAs film grown by molecular beam epitaxy. To understand the feature of the origin which limits the electron mobility in GaNAs, temperature dependences of mobility were measured for high mobility GaNAs and referential low mobility GaInNAs. Temperature dependent mobility for high mobility GaNAs is similar to the GaAs case, while that for low mobility GaInNAs shows large decrease in lower temperature region. The electron mobility of high quality GaNAs can be explained by intrinsic limiting factor of random alloy scattering and extrinsic factor of ionized impurity scattering.

  20. Low-temperature growth and electronic structures of ambipolar Yb-doped zinc tin oxide transparent thin films

    Science.gov (United States)

    Oh, Seol Hee; Ferblantier, Gerald; Park, Young Sang; Schmerber, Guy; Dinia, Aziz; Slaoui, Abdelilah; Jo, William

    2018-05-01

    The compositional dependence of the crystal structure, optical transmittance, and surface electric properties of the zinc tin oxide (Zn-Sn-O, shortened ZTO) thin films were investigated. ZTO thin films with different compositional ratios were fabricated on glass and p-silicon wafers using radio frequency magnetron sputtering. The binding energy of amorphous ZTO thin films was examined by a X-ray photoelectron spectroscopy. The optical transmittance over 70% in the visible region for all the ZTO films was observed. The optical band gap of the ZTO films was changed as a result of the competition between the Burstein-Moss effect and renormalization. An electron concentration in the films and surface work function distribution were measured by a Hall measurement and Kelvin probe force microscopy, respectively. The mobility of the n- and p-type ZTO thin films have more than 130 cm2/V s and 15 cm2/V s, respectively. We finally constructed the band structure which contains band gap, work function, and band edges such as valence band maximum and conduction band minimum of ZTO thin films. The present study results suggest that the ZTO thin film is competitive compared with the indium tin oxide, which is a representative material of the transparent conducting oxides, regarding optoelectronic devices applications.

  1. Interaction mechanisms of condensed tannins (proanthocyanidins) with wheat gluten proteins

    Science.gov (United States)

    Proanthocyanidins (PA) crosslink wheat gluten, increasing its polymer size and strength. However, precise mechanisms behind these interactions are unknown. This study used PA of different MW profiles (mDP 8.3 and 19.5) to investigate the interactions involved in PA polymerization of gluten. The high...

  2. Whole grain gluten-free pastas and flatbreads

    Science.gov (United States)

    Whole grain gluten-free products were formulated and evaluated for acceptance by volunteer tasters. The tastes judged acceptance of whole grain, gluten-free, egg-free pastas for corn 83%, sorghum 79%, brown rice 77% and millet 50%. The acceptance for similar high protein pasta was corn-garbanzo 70...

  3. Whole grain gluten-free vegetable spicy snacks

    Science.gov (United States)

    Four kinds of spicy snacks (gluten-free, whole grains with fresh vegetables, low in fat, sugar and salt) were evaluated. Acceptance of spicy snacks tested were Carrot-Garlic 77%, Broccoli-Garlic 68%, Spinach-Garlic 61% and Red Onion 53%. This is the first report of spicy gluten-free, 50% vegetable...

  4. Regional enteritis and gluten-free diet. A clinical study

    NARCIS (Netherlands)

    Merwe, Christiaan Frederik van der

    1974-01-01

    The purpose of this clinical study was to determine whether the use of a gluten-free diet influenced the course and prognosis of regional enteritis. Following a few clinical communications in the Dutch medical literature reporting favourable results obtained with the gluten-free diet in the

  5. Grain Quality Evaluation and Characterization of Gluten Powder ...

    African Journals Online (AJOL)

    The aim of this research was to study the grain quality, proximate composition, gluten isolation and characterization of three bread wheat varieties namely Pavon 76, HAR 2501 and HAR 2536 grown in Arsi and Bale areas of Ethiopia. The wheat varieties had a protein content of 10.60, 11.53 and 10.70% while the wet gluten ...

  6. IPR CATUARA TM – new cultivar of high gluten wheat

    Directory of Open Access Journals (Sweden)

    Carlos Roberto Riede

    2015-03-01

    Full Text Available The wheat cultivar IPR Catuara TM, obtained from a cross between the line LD 975 and the cultivar IPR 85, exhibits high gluten strength, which will allow the milling industry to supplement flours from wheats with weaker gluten strength, resulting in better quality products for the final consumer.

  7. Recent developments of truly stretchable thin film electronic and optoelectronic devices.

    Science.gov (United States)

    Zhao, Juan; Chi, Zhihe; Yang, Zhan; Chen, Xiaojie; Arnold, Michael S; Zhang, Yi; Xu, Jiarui; Chi, Zhenguo; Aldred, Matthew P

    2018-03-29

    Truly stretchable electronics, wherein all components themselves permit elastic deformation as the whole devices are stretched, exhibit unique advantages over other strategies, such as simple fabrication process, high integrity of entire components and intimate integration with curvilinear surfaces. In contrast to the stretchable devices using stretchable interconnectors to integrate with rigid active devices, truly stretchable devices are realized with or without intentionally employing structural engineering (e.g. buckling), and the whole device can be bent, twisted, or stretched to meet the demands for practical applications, which are beyond the capability of conventional flexible devices that can only bend or twist. Recently, great achievements have been made toward truly stretchable electronics. Here, the contribution of this review is an effort to provide a panoramic view of the latest progress concerning truly stretchable electronic devices, of which we give special emphasis to three kinds of thin film electronic and optoelectronic devices: (1) thin film transistors, (2) electroluminescent devices (including organic light-emitting diodes, light-emitting electrochemical cells and perovskite light-emitting diodes), and (3) photovoltaics (including organic photovoltaics and perovskite solar cells). We systematically discuss the device design and fabrication strategies, the origin of device stretchability and the relationship between the electrical and mechanical behaviors of the devices. We hope that this review provides a clear outlook of these attractive stretchable devices for a broad range of scientists and attracts more researchers to devote their time to this interesting research field in both industry and academia, thus encouraging more intelligent lifestyles for human beings in the coming future.

  8. Polycrystalline Mg2Si thin films: A theoretical investigation of their electronic transport properties

    International Nuclear Information System (INIS)

    Balout, H.; Boulet, P.; Record, M.-C.

    2015-01-01

    The electronic structures and thermoelectric properties of a polycrystalline Mg 2 Si thin film have been investigated by first-principle density-functional theory (DFT) and Boltzmann transport theory calculations within the constant-relaxation time approximation. The polycrystalline thin film has been simulated by assembling three types of slabs each having the orientation (001), (110) or (111) with a thickness of about 18 Å. The effect of applying the relaxation procedure to the thin film induces disorder in the structure that has been ascertained by calculating radial distribution functions. For the calculations of the thermoelectric properties, the energy gap has been fixed at the experimental value of 0.74 eV. The thermoelectric properties, namely the Seebeck coefficient, the electrical conductivity and the power factor, have been determined at three temperatures of 350 K, 600 K and 900 K with respect to both the energy levels and the p-type and n-type doping levels. The best Seebeck coefficient is obtained at 350 K: the S yy component of the tensor amounts to about ±1000 μV K −1 , depending on the type of charge carriers. However, the electrical conductivity is much too small which results in low values of the figure of merit ZT. Structure–property relationship correlations based on directional radial distribution functions allow us to tentatively draw some explanations regarding the anisotropy of the electrical conductivity. Finally, the low ZT values obtained for the polycrystalline Mg 2 Si thin film are paralleled with those recently reported in the literature for bulk chalcogenide glasses. - Graphical abstract: Structure of the polycrystalline thin film of Mg 2 Si. - Author-Highlights: • Polycrystalline Mg 2 Si film has been modelled by DFT approach. • Thermoelectric properties have been evaluated by semi-classical Boltzmann theory. • The structure was found to be slightly disordered after relaxation. • The highest value of Seebeck

  9. Structural and magnetic properties of SmCo-based magnetic films grown by electron-beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Saravanan, P., E-mail: psdrdo@gmail.com [Defence Metallurgical Research Laboratory, Hyderabad 500058 (India); Vinod, V.T.P.; Černík, Miroslav [Institute for Nanomaterials, Advanced Technologies and Innovation, Department of Natural Sciences, Technical University of Liberec, Studentská 1402/2, Liberec 1, 461 17 (Czech Republic); Vishnuraj, R.; Arout Chelvane, J.; Kamat, S.V. [Defence Metallurgical Research Laboratory, Hyderabad 500058 (India); Hsu, Jen-Hwa, E-mail: jhhsu@phys.ntu.edu.tw [Department of Physics, National Taiwan University, Taipei 106, Taiwan (China)

    2015-07-01

    Sub-micron thick Sm–Co films (200 and 300 nm) with selective phase composition are grown on Si (100) substrates by electron-beam evaporation using Sm-lean alloy targets such as Sm{sub 4}Co{sub 96} and Sm{sub 8}Co{sub 92}. The structural and magnetic properties of Sm–Co films are characterized by x-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM) and super-conducting quantum interference device (SQUID) magnetometer. The Sm–Co films obtained with the Sm{sub 4}Co{sub 96} target exhibit Sm{sub 2}Co{sub 17} as a prominent phase; while the films produced with the Sm{sub 8}Co{sub 92} target show Sm{sub 2}Co{sub 7} as a major phase. Both the Sm–Co films reveal granular morphology; however, the estimated grain size values are slightly lower in the case of Sm{sub 2}Co{sub 7} films, irrespective of their thicknesses. Coercivity (H{sub c}) values of 1.48 and 0.9 kOe are achieved for the as-grown 200-nm thick Sm{sub 2}Co{sub 17} and Sm{sub 2}Co{sub 7}-films. Temperature-dependent magnetization studies confirm that the demagnetization behaviors of these films are consistent with respect to the identified phase composition. Upon rapid thermal annealing, maximum H{sub c} value of 8.4 kOe is achieved for the 200 nm thick Sm{sub 2}Co{sub 17}-films. As far as e-beam evaporated Sm–Co films are concerned, this H{sub c} value is one of the best values reported so far. - Highlights: • Electron-beam evaporation was exploited to grow sub-μm thick Sm–Co films. • Sm{sub 2}Co{sub 7} and Sm{sub 2}Co{sub 17} magnetic phases were crystallized using Sm-lean alloy targets. • Both 200 and 300-nm thick Sm–Co films revealed distinct granular morphology. • Sm–Co films of lower thickness exhibited high H{sub c} and low M{sub s} and vice-versa. • Coercivity value of 8.4 kOe achieved for the 200-nm thick Sm{sub 2}Co{sub 17}-films after RTA.

  10. Free volume modifications in chalcone chromophore doped PMMA films by electron irradiation: Positron annihilation study

    Science.gov (United States)

    Ismayil; Ravindrachary, V.; Praveena, S. D.; Mahesha, M. G.

    2018-03-01

    The free volume related fluorescence behaviour in electron beam irradiated chalcone chromophore doped Poly(methyl methacrylate) (PMMA) composite films have been studied using FTIR, UV-Visible, XRD and Positron Annihilation techniques. From the FTIR spectral study it is found that the formation of polarons and bipolaron takes place due to cross linking as well as chain scission processes at lower and higher doses respectively. It reveals that the formation of various polaronic defect levels upon irradiation is responsible for the creation of three optical energy band gaps within the polymer films as obtained from UV-Visible spectra. The crosslinking process at lower doses increases the distance between the pendant groups to reduce the interchain distance and chain scission process at higher doses decreases interchain separation to enhance the number of polarons in the polymer composites as suggested by XRD studies. The fluorescence studies show the enhancement of fluorescence emission at lower doses and reduction at higher doses under electron irradiation. The positron annihilation study suggests that the low radiation doses induce crosslinking which affect the free volume properties and in turn hinders the chalcone molecular rotation within the polymer composite. At higher doses chain scission process support polymer matrix relaxation and facilitates non-radiative transition of the chromophore upon excitation. This study shows that fluorescence enhancement and mobility of chromophore within the polymer matrix is directly related to the free volume around it.

  11. Studies on high electronic energy deposition in transparent conducting indium tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Deshpande, N G [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India); Gudage, Y G [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India); Ghosh, A [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India); Vyas, J C [Technical and Prototype Engineering Division, Bhabha Atomic Research Center, Trombay, Mumbai (MS) (India); Singh, F [Inter-University Accelerator Center, Aruna Asaf Ali Marg, Post Box 10502, New Delhi 110067 (India); Tripathi, A [Inter-University Accelerator Center, Aruna Asaf Ali Marg, Post Box 10502, New Delhi 110067 (India); Sharma, Ramphal [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India)

    2008-02-07

    We have examined the effect of swift heavy ions using 100 MeV Au{sup 8+} ions on the electrical properties of transparent, conducting indium tin oxide polycrystalline films with resistivity of 0.58 x 10{sup -4} {omega} cm and optical transmission greater than 78% (pristine). We report on the modifications occurring after high electronic energy deposition. With the increase in fluency, x-ray line intensity of the peaks corresponding to the planes (1 1 0), (4 0 0), (4 4 1) increased, while (3 3 1) remained constant. Surface morphological studies showed a pomegranate structure of pristine samples, which was highly disturbed with a high dose of irradiation. For the high dose, there was a formation of small spherical domes uniformly distributed over the entire surface. The transmittance was seen to be decreasing with the increase in ion fluency. At higher doses, the resistivity and photoluminescence intensity was seen to be decreased. In addition, the carrier concentration was seen to be increased, which was in accordance with the decrease in resistivity. The observed modifications after high electronic energy deposition in these films may lead to fruitful device applications.

  12. Studies on high electronic energy deposition in transparent conducting indium tin oxide thin films

    International Nuclear Information System (INIS)

    Deshpande, N G; Gudage, Y G; Ghosh, A; Vyas, J C; Singh, F; Tripathi, A; Sharma, Ramphal

    2008-01-01

    We have examined the effect of swift heavy ions using 100 MeV Au 8+ ions on the electrical properties of transparent, conducting indium tin oxide polycrystalline films with resistivity of 0.58 x 10 -4 Ω cm and optical transmission greater than 78% (pristine). We report on the modifications occurring after high electronic energy deposition. With the increase in fluency, x-ray line intensity of the peaks corresponding to the planes (1 1 0), (4 0 0), (4 4 1) increased, while (3 3 1) remained constant. Surface morphological studies showed a pomegranate structure of pristine samples, which was highly disturbed with a high dose of irradiation. For the high dose, there was a formation of small spherical domes uniformly distributed over the entire surface. The transmittance was seen to be decreasing with the increase in ion fluency. At higher doses, the resistivity and photoluminescence intensity was seen to be decreased. In addition, the carrier concentration was seen to be increased, which was in accordance with the decrease in resistivity. The observed modifications after high electronic energy deposition in these films may lead to fruitful device applications

  13. Electronic structure investigation of atomic layer deposition ruthenium(oxide) thin films using photoemission spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Schaefer, Michael, E-mail: mvschaefer@mail.usf.edu, E-mail: schlaf@mail.usf.edu [Department of Physics, University of South Florida, Tampa, Florida 33620 (United States); Schlaf, Rudy, E-mail: mvschaefer@mail.usf.edu, E-mail: schlaf@mail.usf.edu [Department of Electrical Engineering, University of South Florida, Tampa, Florida 33620 (United States)

    2015-08-14

    Analyzing and manipulating the electronic band line-up of interfaces in novel micro- and nanoelectronic devices is important to achieve further advancement in this field. Such band alignment modifications can be achieved by introducing thin conformal interfacial dipole layers. Atomic layer deposition (ALD), enabling angstrom-precise control over thin film thickness, is an ideal technique for this challenge. Ruthenium (Ru{sup 0}) and its oxide (RuO{sub 2}) have gained interest in the past decade as interfacial dipole layers because of their favorable properties like metal-equivalent work functions, conductivity, etc. In this study, initial results of the electronic structure investigation of ALD Ru{sup 0} and RuO{sub 2} films via photoemission spectroscopy are presented. These experiments give insight into the band alignment, growth behavior, surface structure termination, and dipole formation. The experiments were performed in an integrated vacuum system attached to a home-built, stop-flow type ALD reactor without exposing the samples to the ambient in between deposition and analysis. Bis(ethylcyclopentadienyl)ruthenium(II) was used as precursor and oxygen as reactant. The analysis chamber was outfitted with X-ray photoemission spectroscopy (LIXPS, XPS). The determined growth modes are consistent with a strong growth inhibition situation with a maximum average growth rate of 0.21 Å/cycle for RuO{sub 2} and 0.04 Å/cycle for Ru.{sup 0} An interface dipole of up to −0.93 eV was observed, supporting the assumption of a strongly physisorbed interface. A separate experiment where the surface of a RuO film was sputtered suggests that the surface is terminated by an intermediate, stable, non-stoichiometric RuO{sub 2}/OH compound whose surface is saturated with hydroxyl groups.

  14. Electronic structure investigation of atomic layer deposition ruthenium(oxide) thin films using photoemission spectroscopy

    Science.gov (United States)

    Schaefer, Michael; Schlaf, Rudy

    2015-08-01

    Analyzing and manipulating the electronic band line-up of interfaces in novel micro- and nanoelectronic devices is important to achieve further advancement in this field. Such band alignment modifications can be achieved by introducing thin conformal interfacial dipole layers. Atomic layer deposition (ALD), enabling angstrom-precise control over thin film thickness, is an ideal technique for this challenge. Ruthenium (Ru0) and its oxide (RuO2) have gained interest in the past decade as interfacial dipole layers because of their favorable properties like metal-equivalent work functions, conductivity, etc. In this study, initial results of the electronic structure investigation of ALD Ru0 and RuO2 films via photoemission spectroscopy are presented. These experiments give insight into the band alignment, growth behavior, surface structure termination, and dipole formation. The experiments were performed in an integrated vacuum system attached to a home-built, stop-flow type ALD reactor without exposing the samples to the ambient in between deposition and analysis. Bis(ethylcyclopentadienyl)ruthenium(II) was used as precursor and oxygen as reactant. The analysis chamber was outfitted with X-ray photoemission spectroscopy (LIXPS, XPS). The determined growth modes are consistent with a strong growth inhibition situation with a maximum average growth rate of 0.21 Å/cycle for RuO2 and 0.04 Å/cycle for Ru.0 An interface dipole of up to -0.93 eV was observed, supporting the assumption of a strongly physisorbed interface. A separate experiment where the surface of a RuO film was sputtered suggests that the surface is terminated by an intermediate, stable, non-stoichiometric RuO2/OH compound whose surface is saturated with hydroxyl groups.

  15. Electronic structure investigation of atomic layer deposition ruthenium(oxide) thin films using photoemission spectroscopy

    International Nuclear Information System (INIS)

    Schaefer, Michael; Schlaf, Rudy

    2015-01-01

    Analyzing and manipulating the electronic band line-up of interfaces in novel micro- and nanoelectronic devices is important to achieve further advancement in this field. Such band alignment modifications can be achieved by introducing thin conformal interfacial dipole layers. Atomic layer deposition (ALD), enabling angstrom-precise control over thin film thickness, is an ideal technique for this challenge. Ruthenium (Ru 0 ) and its oxide (RuO 2 ) have gained interest in the past decade as interfacial dipole layers because of their favorable properties like metal-equivalent work functions, conductivity, etc. In this study, initial results of the electronic structure investigation of ALD Ru 0 and RuO 2 films via photoemission spectroscopy are presented. These experiments give insight into the band alignment, growth behavior, surface structure termination, and dipole formation. The experiments were performed in an integrated vacuum system attached to a home-built, stop-flow type ALD reactor without exposing the samples to the ambient in between deposition and analysis. Bis(ethylcyclopentadienyl)ruthenium(II) was used as precursor and oxygen as reactant. The analysis chamber was outfitted with X-ray photoemission spectroscopy (LIXPS, XPS). The determined growth modes are consistent with a strong growth inhibition situation with a maximum average growth rate of 0.21 Å/cycle for RuO 2 and 0.04 Å/cycle for Ru. 0 An interface dipole of up to −0.93 eV was observed, supporting the assumption of a strongly physisorbed interface. A separate experiment where the surface of a RuO film was sputtered suggests that the surface is terminated by an intermediate, stable, non-stoichiometric RuO 2 /OH compound whose surface is saturated with hydroxyl groups

  16. Graphene Oxide-TiO2 Nanocomposite Films for Electron Transport Applications

    Science.gov (United States)

    Saleem, Abida; Ullah, Naveed; Khursheed, Kamran; Iqbal, Tahir; Shah, Saqlain A.; Asjad, Muhammad; Sarwar, Nazim; Saleem, Murtaza; Arshad, Muhammad

    2018-03-01

    Graphene oxide-titanium dioxide (GO-TiO2) nanocomposite thin films were prepared for application as the window layer of perovskite solar cells. Graphene oxide (GO) was prepared by a modified Hummer's method, and titanium dioxide (TiO2) nanoparticles were synthesized by hydrothermal solution method. Thin films of GO-TiO2 nanocomposite were prepared with different wt.% of GO by spin coating on indium tin oxide (ITO) substrate followed by annealing at 150°C. X-ray diffraction analysis revealed rutile phase of TiO2 nanostructures. The bandgap of the pure TiO2 thin film was found to be 3.5 eV, reducing to 2.9 eV for the GO-TiO2 nanocomposites with a red-shift towards higher wavelength. Furthermore, thermal postannealing at 400°C improved the transparency in the visible region and decreased the sheet resistance. Morphological and elemental analysis was performed by scanning electron microscopy and energy-dispersive x-ray spectroscopy, respectively. The current-voltage characteristic of the GO-TiO2 nanocomposites indicated Ohmic contact with the ITO substrate. The chemical composition of the as-synthesized GO-TiO2 nanocomposites was investigated by x-ray photoelectron spectroscopy (XPS). The results presented herein demonstrate a new, low-temperature solution-processing approach to obtain rGO-TiO2 composite material for use as the electron transport layer of perovskite solar cells.

  17. Electron beam induced coloration and luminescence in layered structure of WO3 thin films grown by pulsed dc magnetron sputtering

    International Nuclear Information System (INIS)

    Karuppasamy, A.; Subrahmanyam, A.

    2007-01-01

    Tungsten oxide thin films have been deposited by pulsed dc magnetron sputtering of tungsten in argon and oxygen atmosphere. The as-deposited WO 3 film is amorphous, highly transparent, and shows a layered structure along the edges. In addition, the optical properties of the as-deposited film show a steplike behavior of extinction coefficient. However, the electron beam irradiation (3.0 keV) of the as-deposited films results in crystallization, coloration (deep blue), and luminescence (intense red emission). The above changes in physical properties are attributed to the extraction of oxygen atoms from the sample and the structural modifications induced by electron bombardment. The present method of coloration and luminescence has a potential for fabricating high-density optical data storage device

  18. Bias-enhanced post-treatment process for enhancing the electron field emission properties of ultrananocrystalline diamond films

    International Nuclear Information System (INIS)

    Saravanan, A.; Huang, B. R.; Sankaran, K. J.; Tai, N. H.; Dong, C. L.; Lin, I. N.

    2015-01-01

    The electron field emission (EFE) properties of ultrananocrystalline diamond films were markedly improved via the bias-enhanced plasma post-treatment (bep) process. The bep-process induced the formation of hybrid-granular structure of the diamond (bep-HiD) films with abundant nano-graphitic phase along the grain boundaries that increased the conductivity of the films. Moreover, the utilization of Au-interlayer can effectively suppress the formation of resistive amorphous-carbon (a-C) layer, thereby enhancing the transport of electrons crossing the diamond-to-Si interface. Therefore, bep-HiD/Au/Si films exhibit superior EFE properties with low turn-on field of E 0  = 2.6 V/μm and large EFE current density of J e  = 3.2 mA/cm 2 (at 5.3 V/μm)

  19. Celiac disease and non-celiac gluten sensitivity

    Science.gov (United States)

    Lebwohl, Benjamin; Ludvigsson, Jonas F

    2015-01-01

    Celiac disease is a multisystem immune based disorder that is triggered by the ingestion of gluten in genetically susceptible individuals. The prevalence of celiac disease has risen in recent decades and is currently about 1% in most Western populations. The reason for this rise is unknown, although environmental factors related to the hygiene hypothesis are suspected. The pathophysiology of celiac disease involves both the innate and adaptive immune response to dietary gluten. Clinical features are diverse and include gastrointestinal symptoms, metabolic bone disease, infertility, and many other manifestations. Although a gluten-free diet is effective in most patients, this diet can be burdensome and can limit quality of life; consequently, non-dietary therapies are at various stages of development. This review also covers non-celiac gluten sensitivity. The pathophysiology of this clinical phenotype is poorly understood, but it is a cause of increasing interest in gluten-free diets in the general population. PMID:26438584

  20. Release behavior and stability of encapsulated D-limonene from emulsion-based edible films.

    Science.gov (United States)

    Marcuzzo, Eva; Debeaufort, Frédéric; Sensidoni, Alessandro; Tat, Lara; Beney, Laurent; Hambleton, Alicia; Peressini, Donatella; Voilley, Andrée

    2012-12-12

    Edible films may act as carriers of active molecules, such as flavors. This possibility confers to them the status of active packaging. Two different film-forming biopolymers, gluten and ι-carrageenans, have been compared. D-Limonene was added to the two film formulations, and its release kinetics from emulsion-based edible films was assessed with HS-SPME. Results obtained for edible films were compared with D-limonene released from the fatty matrix called Grindsted Barrier System 2000 (GBS). Comparing ι-carrageenans with gluten-emulsified film, the latter showed more interesting encapsulating properties: in fact, D-limonene was retained by gluten film during the process needed for film preparation, and it was released gradually during analysis time. D-Limonene did not show great affinity to ι-carrageenans film, maybe due to high aroma compound hydrophobicity. Carvone release from the three different matrices was also measured to verify the effect of oxygen barrier performances of edible films to prevent D-limonene oxidation. Further investigations were carried out by FT-IR and liquid permeability measurements. Gluten film seemed to better protect D-limonene from oxidation. Gluten-based edible films represent an interesting opportunity as active packaging: they could retain and release aroma compounds gradually, showing different mechanical and nutritional properties from those of lipid-based ingredients.

  1. Gluten-free diet is for some a necessity, for others a lifestyle

    DEFF Research Database (Denmark)

    Jønsson, Iben Møller; Møller, Gitte Leth; Pærregaard, Anders

    2017-01-01

    This review provides a brief overview of the gluten-related conditions coeliac disease (CD), wheat allergy (WA), and non-coeliac gluten sensitivity (NCGS). NCGS is a new entity which includes individuals who report symptoms when exposed to gluten and benefit from gluten-free diet, but do not have...

  2. Effect of water unextractable solids on gluten formation and properties: Mechanistic considerations

    NARCIS (Netherlands)

    Wang, M.; Hamer, R.J.; Vliet, T. van; Gruppen, H.; Marseille, H.; Weegels, P.L.

    2003-01-01

    A miniaturised set-up for gluten-starch separation was used to systematically study the effect of water unextractable solids (WUS) on the formation and properties of gluten. The results showed that WUS not only have a negative effect on gluten yield, but also affect gluten and glutenin macropolymer

  3. High resolution electron microscopy studies of interfaces between Al2O3 substrates and MBE grown Nb films

    International Nuclear Information System (INIS)

    Mayer, J.; Ruhle, M.; Dura, J.; Flynn, C.P.

    1991-01-01

    This paper reports on single crystal niobium films grown by Molecular Beam Epitaxy (MBE) on (001) S sapphire substrates. Cross-sectional specimens with thickness of 2 O 3 interface could be investigated by high resolution electron microscopy (HREM). The orientation relationship between the metal film and the ceramic substrate was verified by selected area diffraction: (111) Nb parallel (0001) S and [1 bar 10] Nb parallel [2 bar 1 bar 10] S . The atomistic structure of the interface was identified by HREM

  4. Polarization of electron-beam irradiated LDPE films: contribution to charge generation and transport

    Science.gov (United States)

    Banda, M. E.; Griseri, V.; Teyssèdre, G.; Le Roy, S.

    2018-04-01

    Electron-beam irradiation is an alternative way to generate charges in insulating materials, at controlled position and quantity, in order to monitor their behaviour in regard to transport phenomena under the space charge induced electric field or external field applied. In this study, low density polyethylene (LDPE) films were irradiated by a 80 keV electron-beam with a flux of 1 nA cm‑2 during 10 min in an irradiation chamber under vacuum conditions, and were then characterized outside the chamber using three experimental methods. The electrical behaviour of the irradiated material was assessed by space charge measurements using the pulsed electro-acoustic (PEA) method under dc stress. The influence of the applied electric field polarity and amplitude has been tested in order to better understand the charge behaviour after electron-beam irradiation. Fourier transform infra-red spectroscopy (FTIR) and photoluminescence (PL) measurements were performed to evaluate the impact of the electron beam irradiation, i.e. deposited charges and energy, on the chemical structure of the irradiated samples. The present results show that the electrical behaviour in LDPE after irradiation is mostly driven by charges, i.e. by physical process functions of the electric field, and that changes in the chemical structure seems to be mild.

  5. Characterization of gold nanoparticle films: Rutherford backscattering spectroscopy, scanning electron microscopy with image analysis, and atomic force microscopy

    Directory of Open Access Journals (Sweden)

    Pia C. Lansåker

    2014-10-01

    Full Text Available Gold nanoparticle films are of interest in several branches of science and technology, and accurate sample characterization is needed but technically demanding. We prepared such films by DC magnetron sputtering and recorded their mass thickness by Rutherford backscattering spectroscopy. The geometric thickness dg—from the substrate to the tops of the nanoparticles—was obtained by scanning electron microscopy (SEM combined with image analysis as well as by atomic force microscopy (AFM. The various techniques yielded an internally consistent characterization of the films. In particular, very similar results for dg were obtained by SEM with image analysis and by AFM.

  6. Surface and local electronic structure modification of MgO film using Zn and Fe ion implantation

    Science.gov (United States)

    Singh, Jitendra Pal; Lim, Weon Cheol; Lee, Jihye; Song, Jonghan; Lee, Ik-Jae; Chae, Keun Hwa

    2018-02-01

    Present work is motivated to investigate the surface and local electronic structure modifications of MgO films implanted with Zn and Fe ions. MgO film was deposited using radio frequency sputtering method. Atomic force microscopy measurements exhibit morphological changes associated with implantation. Implantation of Fe and Zn ions leads to the reduction of co-ordination geometry of Mg2+ ions in host lattice. The effect is dominant at bulk of film rather than surface as the large concentration of implanted ions resides inside bulk. Moreover, the evidences of interaction among implanted ions and oxygen are not being observed using near edge fine structure measurements.

  7. Two-dimensional mapping of underdosed areas using radiochromic film for patients undergoing total skin electron beam radiotherapy

    International Nuclear Information System (INIS)

    Gamble, Lisa M.; Farrell, Thomas J.; Jones, Glenn W.; Hayward, Joseph E.

    2005-01-01

    Purpose: To demonstrate the viability of radiochromic film as an in vivo, two-dimensional dosimeter for the measurement of underdosed areas in patients undergoing total skin electron beam (TSEB) radiotherapy. The results were compared with thermoluminescent dosimeter measurements. Methods and Materials: Dosimetry results are reported for an inframammary fold of 2 patients treated using a modified version of the Stanford six-position (i.e., six-field and dual-beam) TSEB technique. The results are presented as contour plots of film optical density and percentage of dose. A linear dose profile measured from film was compared with the thermoluminescent dosimeter measurements. Results: The results showed that the percentage doses as measured by film are in good agreement with those measured by the thermoluminescent dosimeters. The isodose contour plots provided by film can be used as a two-dimensional dose map for a patient when determining the size of the supplemental patch fields. Conclusion: Radiochromic film is a viable dosimetry tool that the radiation oncologist can use to understand the surface dose heterogeneity better across complex concave regions of skin to help establish more appropriate margins to patch underdosed areas. Film could be used for patients undergoing TSEB for disorders such as mycosis fungoides or undergoing TSEB or regional skin electron beam for widespread skin metastases from breast cancer and other malignancies

  8. Modification of the electronic properties of As2Se3 films by erbium using ion-plasma sputtering method

    International Nuclear Information System (INIS)

    Prikhodko, O.Yu.; Sarsembinov, Sh.Sh.; Ryaguzov, A.P.; Maksimova, S.Ya.; Chuprynin, A.S.

    2003-01-01

    At present one of the vital problems of semiconductor materials studies is production of new light emitting materials for fiber optics, namely for light-emitting diode, emitting at room temperature in the range of minimum absorption of quartz optic fiber. It is well-known that heterostructures based on amorphous semiconductors, containing large concentrations of rare-earth elements have such properties. The method of ion-plasma co-sputtering (IPCM) of the original and doping materials allows us to obtain amorphous semiconductor films with large impurity concentration. This method was used to produce amorphous films of chalcogenide vitreous semiconductors (ChVS), doped with impurities of different chemical nature. But the capability of IPCM for ChVS doping with rare-earth elements has not been studied well yet. Therefore it is interesting to obtain amorphous films of arsenic selenide doped with erbium using IPCM and study its electronic properties. The films were produced using high frequency (13.56 MHz) ion-plasma co-sputtering of combined target of vitreous As 2 Se 3 and a metal. The sputtering of the target was conducted in argon atmosphere. Er concentration in the films varied between 0 and 4 atomic percent. Amorphism of the structure of the obtained films was monitored using X-ray diffraction methods. Electrical and optical properties of Er-doped As 2 Se 3 films and the charge carrier transportation processes were studied. It was determined that doped films significantly differ from the pure ones in the values of main electronic parameters: conductivity, energy activation of conductivity, optical band-gap, drift mobility of electrons and holes and mobility activation energy. Note that common rules of change of electronic parameters of As 2 Se 3 films affected by Er doping agree with the rules, established during modification of As 2 Se 3 films with dopes of transition metals with incomplete 3d-shell (Fe, Ni). Analysis of the obtained results showed that doing

  9. The effect of electron-surface scattering and thiol adsorption on the electrical resistivity of gold ultrathin films

    International Nuclear Information System (INIS)

    Henriquez, Ricardo; Del Campo, Valeria; Gonzalez-Fuentes, Claudio; Correa-Puerta, Jonathan; Moraga, Luis; Flores, Marcos; Segura, Rodrigo; Donoso, Sebastián; Marín, Francisca; Bravo, Sergio; Häberle, Patricio

    2017-01-01

    Highlights: • We prepared ultra thin films (10 nm) on mica on top of a chromium seedlayer (<1 nm). • We prepared samples with different topographies controlling the substrate temperature. • We studied the contribution of the different scattering mechanims on the resistivity. • We developed a discernment method based on thiol adsorption. - Abstract: In order to study the effect of electron-surface scattering in gold ultrathin films (∼10 nm), we have prepared a set of Au samples on mica on top of a chromium seedlayer (<1 nm). Chromium is added as a metallic surfactant which enables surpassing the electric percolation threshold for substrate temperatures above room temperature. We prepared samples with the same thickness but different topographies setting different substrate temperatures. These modifications modulate the contributions of the different electronic scattering mechanisms to the film resistivity. A second set of gold thin films deposited on mica at room temperature, with different thicknesses between 8 and 100 nm, was also prepared to compare the resisitivities of both sets through Mayadas and Shatzkes theory. We found that in samples with thicknesses below 15 nm, the electron-surface scattering is indeed the dominant mechanism influencing the film resistivity. To obtain further evidence of this prevalence, we developed a discrimination method based on thiol adsorption. The film with the highest resistivity increase is the sample in which electron-surface scattering is dominant. With this method, we observed that a large enhancement of the electron-surface scattering not only occurs in samples with large diameters grains, but also if the film has a reduced surface roughness.​

  10. The effect of electron-surface scattering and thiol adsorption on the electrical resistivity of gold ultrathin films

    Energy Technology Data Exchange (ETDEWEB)

    Henriquez, Ricardo, E-mail: ricardo.henriquez@usm.cl [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaiso 2390123 (Chile); Del Campo, Valeria; Gonzalez-Fuentes, Claudio [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaiso 2390123 (Chile); Correa-Puerta, Jonathan [Instituto de Física, Pontificia Universidad Católica de Valparaíso, Av. Universidad 330, Curauma, Valparaíso (Chile); Moraga, Luis [Universidad Central de Chile, Toesca 1783, Santiago 8370178 (Chile); Flores, Marcos [Departamento de Física, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Av. Blanco Encalada 2008, Santiago (Chile); Segura, Rodrigo [Instituto de Química y Bioquímica, Facultad de Ciencias, Universidad de Valparaíso, Av. Gran Bretaña 1111, Valparaíso (Chile); Donoso, Sebastián; Marín, Francisca; Bravo, Sergio; Häberle, Patricio [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaiso 2390123 (Chile)

    2017-06-15

    Highlights: • We prepared ultra thin films (10 nm) on mica on top of a chromium seedlayer (<1 nm). • We prepared samples with different topographies controlling the substrate temperature. • We studied the contribution of the different scattering mechanims on the resistivity. • We developed a discernment method based on thiol adsorption. - Abstract: In order to study the effect of electron-surface scattering in gold ultrathin films (∼10 nm), we have prepared a set of Au samples on mica on top of a chromium seedlayer (<1 nm). Chromium is added as a metallic surfactant which enables surpassing the electric percolation threshold for substrate temperatures above room temperature. We prepared samples with the same thickness but different topographies setting different substrate temperatures. These modifications modulate the contributions of the different electronic scattering mechanisms to the film resistivity. A second set of gold thin films deposited on mica at room temperature, with different thicknesses between 8 and 100 nm, was also prepared to compare the resisitivities of both sets through Mayadas and Shatzkes theory. We found that in samples with thicknesses below 15 nm, the electron-surface scattering is indeed the dominant mechanism influencing the film resistivity. To obtain further evidence of this prevalence, we developed a discrimination method based on thiol adsorption. The film with the highest resistivity increase is the sample in which electron-surface scattering is dominant. With this method, we observed that a large enhancement of the electron-surface scattering not only occurs in samples with large diameters grains, but also if the film has a reduced surface roughness.​.

  11. Effect of high-energy electron beam irradiation on the transmittance of ZnO thin films on transparent substrates

    International Nuclear Information System (INIS)

    Yun, Eui-Jung; Jung, Jin-Woo; Han, Young-Hwan; Kim, Min-Wan; Lee, Byung Cheol

    2010-01-01

    We investigated in this study the effects of high-energy electron beam irradiation (HEEBI) on the optical transmittance of undoped ZnO films grown on transparent substrates, such as corning glass and polyethersulfone (PES) plastic substrates, with a radio frequency (rf) magnetron sputtering technique. The ZnO thin films were treated with HEEBI in air at RT with an electron beam energy of 1 MeV and doses of 4.7 x 10 14 - 4.7 x 10 16 electrons/cm 2 . The optical transmittance of the ZnO films was measured using an ultraviolet visible near-infrared spectrophotometer. The detailed estimation process for separating the transmittance of HEEBI-treated ZnO films from the total transmittance of ZnO films on transparent substrates treated with HEEBI is given in this paper. We concluded that HEEBI causes a slight suppression in the optical transmittance of ZnO thin films. We also concluded that HEEBI treatment with a high dose shifted the optical band gap (E g ) toward the lower energy region from 3.29 to 3.28 eV whereas that with a low dose unchanged E g at 3.25 eV. This shift suggested that HEEBI at RT at a high dose acts like an annealing treatment at high temperature.

  12. Electronic excitation-induced structural, optical, and magnetic properties of Ni-doped HoFeO3 thin films

    International Nuclear Information System (INIS)

    Habib, Zubida; Ikram, Mohd; Mir, Sajad A.; Sultan, Khalid; Abida; Majid, Kowsar; Asokan, K.

    2017-01-01

    Present study investigates the electronic excitation-induced modifications in the structural, optical, and magnetic properties of Ni-doped HoFeO 3 thin films grown by pulsed laser deposition on LaAlO 3 substrates. Electronic excitations were induced by 200 MeV Ag 12+ ion beam. These thin films were then characterized using X-ray diffraction (XRD), atomic force microscopy (AFM), UV-Vis spectroscopy, and magnetic measurements. X-ray diffraction analysis confirms that the crystallite growth occurs in the preferred (111) orientation with orthorhombic structure. The XRD results also show that the crystallite size decreases with ion irradiation. AFM results after irradiation show significant changes in the surface roughness and morphology of these films. The optical parameters measured from absorption measurements reveal reduction in the band gap with Ni doping and enhancement of band gap after irradiation. The magnetization vs field measurement at 75 K shows enhancement in saturation magnetization after irradiation for HoFe 1-x Ni x O 3 (x = 0.1 and 0.3) films compared to HoFeO 3 film. Present study shows electronic excitation induces significant changes in the physical properties of these films. (orig.)

  13. Intake and sources of gluten in 20- to 75-year-old Danish adults

    DEFF Research Database (Denmark)

    Hoppe, Camilla; Gøbel, Rikke Juul; Kristensen, Mette

    2017-01-01

    PURPOSE: Celiac disease, an immunological response triggered by gluten, affects ~1 % of the Western population. Information concerning gluten intake in the general population is scarce. We determined intake of gluten from wheat, barley, rye and oat in the Danish National Survey of Diet and Physical...... with the amount of cereal used in recipes. Amount of gluten was calculated as amount of cereal protein ×0.80 for wheat and oat, ×0.65 for rye and ×0.50 for barley. Dietary intake was recorded daily during seven consecutive days in pre-coded food diaries with open-answer possibilities. RESULTS: Mean total gluten...... gluten sources tended to be higher in men than in women with the exception of gluten from barley. Total gluten intake decreased with increasing age (P gluten intake from wheat (P gluten from rye (P

  14. Study of the electron beam irradiation effect on some properties of aromatic aliphatic copolyester films

    International Nuclear Information System (INIS)

    Poveda, Patricia Negrini Siqueira

    2008-01-01

    Biodegradable and green plastics are the new tendency in the world. The effect of the electron beam irradiation in aromatic aliphatic copolyester and the blend with corn starch films (Ecoflex R and Ecobras R ) were studied by tensile strength at break, elongation at break, Scanning Electronic Microscopy (SEM), Fourier Transform Infrared Spectroscopy (FT-IR), Differential Scanning Calorimetry (DSC), crosslinking degree and biodegradability. The measurements in both, the machine direction and the transverse direction were made for mechanical tests. It was found that, the electron irradiation caused an increase in the strength at break of the blend with corn starch film, when doses of up to 10 kGy were applied. A significant decrease of the elongation at break of the blend with corn starch was observed at doses of 10 kGy and 40 kGy. It was not found important change in tensile properties for aromatic aliphatic copolyester. Structural changes of the samples (crosslinking or degradation) by SEM were not observed. The FT-IR identified the characteristic peaks of each involved functional group (copolyester and corn starch). However, it was not found bands of oxidation of the samples. In the DSC, changes in the melting temperature of the irradiated Ecoflex R and Ecobras R samples, was not identified when compared with the samples of reference. However, it was verified a reduction in the melting enthalpy of the Ecobras R samples after irradiation. The Ecobras R material presented crosslinking, when submitted to doses of 10 kGy and 40 kGy. The Ecoflex R material did not present crosslinking when submitted to these doses. The biodegradability of the materials was evaluated by two methods of test: soil simulated and enzymatic. In both methods, the irradiated samples presented faster biodegradation than the references not irradiated. (author)

  15. Effect of deposition rate on the microstructure of electron beam evaporated nanocrystalline palladium thin films

    Energy Technology Data Exchange (ETDEWEB)

    Amin-Ahmadi, B., E-mail: behnam.amin-ahmadi@ua.ac.be [Electron Microscopy for Materials Science (EMAT), Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp (Belgium); Idrissi, H. [Electron Microscopy for Materials Science (EMAT), Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp (Belgium); Galceran, M. [Université Libre de Bruxelles, Matters and Materials Department, 50 Av. FD Roosevelt CP194/03, 1050 Brussels (Belgium); Colla, M.S. [Institute of Mechanics, Materials and Civil Engineering, Université catholique de Louvain, Place Sainte Barbe 2, B-1348 Louvain-la-Neuve (Belgium); Raskin, J.P. [Information and Communications Technologies, Electronics and Applied Mathematics (ICTEAM), Microwave Laboratory, Université catholique de Louvain, B-1348 Louvain-la-Neuve (Belgium); Pardoen, T. [Institute of Mechanics, Materials and Civil Engineering, Université catholique de Louvain, Place Sainte Barbe 2, B-1348 Louvain-la-Neuve (Belgium); Godet, S. [Université Libre de Bruxelles, Matters and Materials Department, 50 Av. FD Roosevelt CP194/03, 1050 Brussels (Belgium); Schryvers, D. [Electron Microscopy for Materials Science (EMAT), Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp (Belgium)

    2013-07-31

    The influence of the deposition rate on the formation of growth twins in nanocrystalline Pd films deposited by electron beam evaporation is investigated using transmission electron microscopy. Statistical measurements prove that twin boundary (TB) density and volume fraction of grains containing twins increase with increasing deposition rate. A clear increase of the dislocation density was observed for the highest deposition rate of 5 Å/s, caused by the increase of the internal stress building up during deposition. Based on crystallographic orientation indexation using transmission electron microscopy, it can be concluded that a {111} crystallographic texture increases with increasing deposition rate even though the {101} crystallographic texture remains dominant. Most of the TBs are fully coherent without any residual dislocations. However, for the highest deposition rate (5 Å/s), the coherency of the TBs decreases significantly as a result of the interaction of lattice dislocations emitted during deposition with the growth TBs. The analysis of the grain boundary character of different Pd films shows that an increasing fraction of high angle grain boundaries with misorientation angles around 55–65° leads to a higher potential for twin formation. - Highlights: • Fraction of twinned grains and twin boundary density increase with deposition rate. • Clear increase of dislocation density was observed for the highest deposition rate. • A moderate increase of the mean grain size with increase of deposition rate is found. • For the highest deposition rate, the twin boundaries lose their coherency. • Fraction of high angle grain boundary (55–65) increases with deposition rate.

  16. Trans-membrane electron transfer in red blood cells immobilized in a chitosan film on a glassy carbon electrode

    International Nuclear Information System (INIS)

    Yu, Chunmei; Wang, Li; Zhu, Zhenkun; Bao, Ning; Gu, Haiying

    2014-01-01

    We have studied the trans-membrane electron transfer in human red blood cells (RBCs) immobilized in a chitosan film on a glassy carbon electrode (GCE). Electron transfer results from the presence of hemoglobin (Hb) in the RBCs. The electron transfer rate (k s ) of Hb in RBCs is 0.42 s −1 , and <1.13 s −1 for Hb directly immobilized in the chitosan film. Only Hb molecules in RBCs that are closest to the plasma membrane and the surface of the electrode can undergo electron transfer to the electrode. The immobilized RBCs displayed sensitive electrocatalytic response to oxygen and hydrogen peroxide. It is believed that this cellular biosensor is of potential significance in studies on the physiological status of RBCs based on observing their electron transfer on the modified electrode. (author)

  17. Evaluation of respiratory movement during gated radiotherapy using film and electronic portal imaging

    International Nuclear Information System (INIS)

    Ford, E.C.; Mageras, G.S.; Yorke, E.; Rosenzweig, K.E.; Wagman, R.; Ling, C.C.

    2002-01-01

    Purpose: To evaluate the effectiveness of a commercial system in reducing respiration-induced treatment uncertainty by gating the radiation delivery. Methods and Materials: The gating system considered here measures respiration from the position of a reflective marker on the patient's chest. Respiration-triggered planning CT scans were obtained for 8 patients (4 lung, 4 liver) at the intended phase of respiration (6 at end expiration and 2 at end inspiration). In addition, fluoroscopic movies were recorded simultaneously with the respiratory waveform. During the treatment sessions, gated localization films were used to measure the position of the diaphragm relative to the vertebral bodies, which was compared to the reference digitally reconstructed radiograph derived from the respiration-triggered planning CT. Variability was quantified by the standard deviation about the mean position. We also assessed the interfraction variability of soft tissue structures during gated treatment in 2 patients using an amorphous silicon electronic portal imaging device. Results: The gated localization films revealed an interfraction patient-averaged diaphragm variability of 2.8±1.0 mm (error bars indicate standard deviation in the patient population). The fluoroscopic data yielded a patient-averaged intrafraction diaphragm variability of 2.6±1.7 mm. With no gating, this intrafraction excursion became 6.9±2.1 mm. In gated localization films, the patient-averaged mean displacement of the diaphragm from the planning position was 0.0±3.9 mm. However, in 4 of the 8 patients, the mean (over localization films) displacement was >4 mm, indicating a systematic displacement in treatment position from the planned one. The position of soft tissue features observed in portal images during gated treatments over several fractions showed a mean variability between 2.6 and 5.7 mm. The intrafraction variability, however, was between 0.6 and 1.4 mm, indicating that most of the variability was

  18. Influence of structural transition on the electronic structures and physical properties of Ni2MnGa alloy films

    International Nuclear Information System (INIS)

    Kim, K. W.; Kudryavtsev, Y. V.; Rhee, J. Y.; Lee, N. N.; Lee, Y. P.

    2004-01-01

    Ordered and disordered Ni 2 MnGa alloy films were prepared by flash evaporation onto substrates maintained at 720 K and 150 K, respectively. The results show that the ordered films behave in nearly the same way as the bulk Ni 2 MnGa ferromagnetic shape-memory alloy, including the martensitic transformation at 200 K, while the disordered films exhibit characteristics of amorphous alloys. It was also found that the disordering in Ni 2 MnGa alloy films did not change to any appreciable magnetic ordering down to 4 K. Annealing of the disordered films restores the ordered structure with an almost full recovery of the magnetic, magneto-optical and transport properties of the ordered Ni 2 MnGa alloy films. It was also understood, for the first time, how the structural ordering in the films influences the physical properties, including the surprising loss of ferromagnetism in the disordered films, as a result of performing electronic-structure calculations.

  19. Thin film deposition and characterization of pure and iron-doped electron-beam evaporated tungsten oxide for gas sensors

    Energy Technology Data Exchange (ETDEWEB)

    Tesfamichael, Tuquabo, E-mail: t.tesfamichael@qut.edu.a [Faculty of Built Environment and Engineering, School of Engineering Systems, Queensland University of Technology, 2 George Street, Brisbane, QLD 4000 (Australia); Arita, Masashi [Graduate School of Information Science and Technology, Hokkaido University, Kita-14, Nishi-9, Kita-ku, Sapporo, 060-0814 (Japan); Bostrom, Thor [Faculty of Science and Technology, School of Physical and Chemical Sciences, Queensland University of Technology, 2 George Street, Brisbane, QLD 4000 (Australia); Bell, John [Centre for Built Environment and Engineering Research, Queensland University of Technology, 2 George Street, Brisbane, QLD 4000 (Australia)

    2010-06-30

    Pure tungsten oxide (WO{sub 3}) and iron-doped (10 at.%) tungsten oxide (WO{sub 3}:Fe) nanostructured thin films were prepared using a dual crucible Electron Beam Evaporation (EBE) technique. The films were deposited at room temperature under high vacuum onto glass as well as alumina substrates and post-heat treated at 300 {sup o}C for 1 h. Using Raman spectroscopy the as-deposited WO{sub 3} and WO{sub 3}:Fe films were found to be amorphous, however their crystallinity increased after annealing. The estimated surface roughness of the films was similar (of the order of 3 nm) to that determined using Atomic Force Microscopy (AFM). As observed by AFM, the WO{sub 3}:Fe film appeared to have a more compact surface as compared to the more porous WO{sub 3} film. X-ray photoelectron spectroscopy analysis showed that the elemental stoichiometry of the tungsten oxide films was consistent with WO{sub 3}. A slight difference in optical band gap energies was found between the as-deposited WO{sub 3} (3.22 eV) and WO{sub 3}:Fe (3.12 eV) films. The differences in the band gap energies of the annealed films were significantly higher, having values of 3.12 eV and 2.61 eV for the WO{sub 3} and WO{sub 3}:Fe films respectively. The heat treated films were investigated for gas sensing applications using noise spectroscopy. It was found that doping of Fe to WO{sub 3} produced gas selectivity but a reduced gas sensitivity as compared to the WO{sub 3} sensor.

  20. Linear temperature behavior of thermopower and strong electron-electron scattering in thick F-doped SnO2 films

    Science.gov (United States)

    Lang, Wen-Jing; Li, Zhi-Qing

    2014-07-01

    Both the semi-classical and quantum transport properties of F-doped SnO2 thick films (˜1 μm) were investigated experimentally. We found that the resistivity caused by the thermal phonons obeys Bloch-Grüneisen law from ˜90 to 300 K, while only the diffusive thermopower, which varies linearly with temperature from 300 down to 10 K, can be observed. The phonon-drag thermopower is completely suppressed due to the long electron-phonon relaxation time in the compound. These observations, together with the fact that the carrier concentration has negligible temperature dependence, indicate that the conduction electrons in F-doped SnO2 films possess free-electron-like characteristics. At low temperatures, the electron-electron scattering dominates over the electron-phonon scattering and governs the inelastic scattering process. The theoretical predications of scattering rates of large- and small-energy-transfer electron-electron scattering processes, which are negligibly weak in three-dimensional disordered conventional conductors, are quantitatively tested in this lower carrier concentration and free-electron-like highly degenerate semiconductor.