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Sample records for gd-doped magnetron-sputtered amorphous

  1. EXAFS studies on Gd-doped ZrO2 thin films deposited by RF magnetron sputtering.

    Science.gov (United States)

    Maidul Haque, S; Tripathi, S; Jha, S N; Bhattacharyya, D; Sahoo, N K

    2016-09-10

    ZrO2 thin films with 0%, 7%, 9%, 11%, and 13% Gd doping have been prepared by RF magnetron sputtering and have been characterized by grazing incidence x-ray diffraction, spectroscopic ellipsometry, and optical transmission measurements to probe their structural and optical properties. Extended x-ray absorption fine structure (EXAFS) measurements have also been carried out on the samples at the Zr K- and Gd L3-edges. It has been observed that Gd goes to Zr sites up to 9%-11% doping concentration, and for Gd doping concentrations beyond 11%, Gd precipitates out as a separate Gd2O3 phase. The local structure information surrounding the Zr and Gd sites obtained from the analysis of the EXAFS studies have also been used to explain the macroscopic optical properties of the samples.

  2. Optical and local structural study of Gd doped ZrO{sub 2} thin films deposited by RF magnetron sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Haque, S. Maidul, E-mail: skmaidulhaque@gmail.com; Shinde, D. D.; Misal, J. S. [Atomic & Molecular Physics Division, Bhabha Atomic Research Centre, VIZAG Centre, Visakhapatnam-530012 (India); Jha, S. N.; Bhattacharyya, D.; Sahoo, N. K. [Atomic & Molecular Physics Division, Bhabha Atomic Research Centre. Mumbai – 400094 (India)

    2015-06-24

    ZrO{sub 2} samples with 0, 7, 9, 11, 13 % Gd doping have been prepared by RF magnetron sputtering deposition technique for solid oxide fuel cell application. The optical properties of the samples have been studied by transmission spectrophotometry and spectroscopic ellipsometry while the local structure surrounding Zr sites has been characterized by extended x-ray absorption fine structure (EXAFS) measurement at Zr K edge with synchrotron radiation. It has been observed that beyond 11% Gd doping, band gap decreases and refractive index increases significantly and also oxygen and Zr coordinations surrounding Zr sites increase which indicates the formation of Gd clustering in ZrO{sub 2} matrix beyond this doping concentration.

  3. Tribological properties, corrosion resistance and biocompatibility of magnetron sputtered titanium-amorphous carbon coatings

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    Dhandapani, Vishnu Shankar [PG & Research Department of Physics, PSG College of Arts & Science, Coimbatore 641 014, Tamil Nadu (India); Center for Nano-Wear, Yonsei University, Seoul 120-749 (Korea, Republic of); Subbiah, Ramesh [Center for Biomaterials, Korea Institute of Science and Technology (KIST), Seoul 136-791 (Korea, Republic of); Department of Biomedical Engineering, Korea University of Science and Technology (UST), Daejon 305-333 (Korea, Republic of); Thangavel, Elangovan [PG & Research Department of Physics, PSG College of Arts & Science, Coimbatore 641 014, Tamil Nadu (India); Center for Nano-Wear, Yonsei University, Seoul 120-749 (Korea, Republic of); Arumugam, Madhankumar [Center of Research Excellence in Corrosion, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Park, Kwideok [Center for Biomaterials, Korea Institute of Science and Technology (KIST), Seoul 136-791 (Korea, Republic of); Department of Biomedical Engineering, Korea University of Science and Technology (UST), Daejon 305-333 (Korea, Republic of); Gasem, Zuhair M. [Center of Research Excellence in Corrosion, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Veeraragavan, Veeravazhuthi, E-mail: vv.vazhuthi@gmail.com [PG & Research Department of Physics, PSG College of Arts & Science, Coimbatore 641 014, Tamil Nadu (India); Kim, Dae-Eun, E-mail: kimde@yonsei.ac.kr [Center for Nano-Wear, Yonsei University, Seoul 120-749 (Korea, Republic of); Department of Mechanical Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of)

    2016-05-15

    Highlights: • a-C:Ti nanocomposite coatings were prepared on 316L stainless steel by using R.F. magnetron sputtering method. • Properties of the nanocomposite coatings were analyzed with respect to titanium content. • Corrosion resistance, biocompatibility and hydrophobicity of nanocomposite coating were enhanced with increasing titanium content. • Coating with 2.33 at.% titanium showed superior tribological properties compared to other coatings. - Abstract: Amorphous carbon incorporated with titanium (a-C:Ti) was coated on 316L stainless steel (SS) by magnetron sputtering technique to attain superior tribological properties, corrosion resistance and biocompatibility. The morphology, topography and functional groups of the nanostructured a-C:Ti coatings in various concentrations were analyzed using atomic force microscopy (AFM), Raman, X-Ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). Raman and XPS analyses confirmed the increase in sp{sup 2} bonds with increasing titanium content in the a-C matrix. TEM analysis confirmed the composite nature of the coating and the presence of nanostructured TiC for Ti content of 2.33 at.%. This coating showed superior tribological properties compared to the other a-C:Ti coatings. Furthermore, electrochemical corrosion studies were performed against stimulated body fluid medium in which all the a-C:Ti coatings showed improved corrosion resistance than the pure a-C coating. Preosteoblasts proliferation and viability on the specimens were tested and the results showed that a-C:Ti coatings with relatively high Ti (3.77 at.%) content had better biocompatibility. Based on the results of this work, highly durable coatings with good biocompatibility could be achieved by incorporation of optimum amount of Ti in a-C coatings deposited on SS by magnetron sputtering technique.

  4. Codeposition of amorphous zinc tin oxide using high power impulse magnetron sputtering: characterisation and doping

    Science.gov (United States)

    Tran, H. N.; Mayes, E. L. H.; Murdoch, B. J.; McCulloch, D. G.; McKenzie, D. R.; Bilek, M. M. M.; Holland, A. S.; Partridge, J. G.

    2017-04-01

    Thin film zinc tin oxide (ZTO) has been energetically deposited at 100 °C using high power impulse magnetron sputtering (HiPIMS). Reactive co-deposition from Zn (HiPIMS mode) and Sn (DC magnetron sputtering mode) targets yielded a gradient in the Zn:Sn ratio across a 4-inch diameter sapphire substrate. The electrical and optical properties of the film were studied as a function of composition. As-deposited, the films were amorphous, transparent and semi-insulating. Hydrogen was introduced by post-deposition annealing (1 h, 500 °C, 100 mTorr H2) and resulted in significantly increased conductivity with no measurable structural alterations. After annealing, Hall effect measurements revealed n-type carrier concentrations of ∼1 × 1017 cm‑3 and mobilities of up to 13 cm2 V‑1 s–1. These characteristics are suitable for device applications and proved stable. X-ray photoelectron spectroscopy was used to explore the valence band structure and to show that downward surface band-bending resulted from OH attachment. The results suggest that HiPIMS can produce dense, high quality amorphous ZTO suitable for applications including transparent thin film transistors.

  5. Tribological properties, corrosion resistance and biocompatibility of magnetron sputtered titanium-amorphous carbon coatings

    Science.gov (United States)

    Dhandapani, Vishnu Shankar; Subbiah, Ramesh; Thangavel, Elangovan; Arumugam, Madhankumar; Park, Kwideok; Gasem, Zuhair M.; Veeraragavan, Veeravazhuthi; Kim, Dae-Eun

    2016-05-01

    Amorphous carbon incorporated with titanium (a-C:Ti) was coated on 316L stainless steel (SS) by magnetron sputtering technique to attain superior tribological properties, corrosion resistance and biocompatibility. The morphology, topography and functional groups of the nanostructured a-C:Ti coatings in various concentrations were analyzed using atomic force microscopy (AFM), Raman, X-Ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). Raman and XPS analyses confirmed the increase in sp2 bonds with increasing titanium content in the a-C matrix. TEM analysis confirmed the composite nature of the coating and the presence of nanostructured TiC for Ti content of 2.33 at.%. This coating showed superior tribological properties compared to the other a-C:Ti coatings. Furthermore, electrochemical corrosion studies were performed against stimulated body fluid medium in which all the a-C:Ti coatings showed improved corrosion resistance than the pure a-C coating. Preosteoblasts proliferation and viability on the specimens were tested and the results showed that a-C:Ti coatings with relatively high Ti (3.77 at.%) content had better biocompatibility. Based on the results of this work, highly durable coatings with good biocompatibility could be achieved by incorporation of optimum amount of Ti in a-C coatings deposited on SS by magnetron sputtering technique.

  6. Photocatalytic degradation characteristic of amorphous TiO2-W thin films deposited by magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    HUANG Jia-mu; LI Yue-xia; ZHAO Guo-dong; CAI Xiao-ping

    2006-01-01

    TiO2-W films were deposited on the slides by reactive magnetron sputtering. Properties of the films were analyzed via AFM,XRD,XPS,STS,UV-Vis and ellipse polarization apparatus. The results show that TiO2-W films are amorphous. The AFM map reveals that the surface of the film is tough and porous. The experiments of decomposing methylene blue indicate that the thickness threshold on these films is 141 nm,at which the rate of photodegradation is 90% in 2 h. And when the thickness is over 141 nm,the rate of photodegradation does not increase any more. This result is completely different from that of crystalloid TiO2 thin film.

  7. Composition and Microstructure of Magnetron Sputtering Deposited Ti-containing Amorphous Carbon Films

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Ti-containing carbon films were deposited by using magnetron sputtering deposition. The composition and microstructure of the carbon films were characterized in detail by combining the techniques of Rutherford backscattering spectrometry (RBS), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and transmission electron microscopy (TEM). It is found that carbon films contain Ti 18 at pct; after Ti incorporation, the films consist of titanium carbide; C1s peak appears at 283.4 eV and it could be divided into 283.29 and 284.55 eV, representing sp2 and sp3, respectively, and sp2 is superior to sp3. This Ti-containing film with dominating sp2 bonds is nanocomposites with nanocrystalline TiC clusters embedded in an amorphous carbon matrix, which could be proved by XRD and TEM.

  8. Characterization of amorphous and nanocomposite Nb–Si–C thin films deposited by DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Nedfors, Nils, E-mail: nils.nedfors@kemi.uu.se [Department of Chemistry, The Ångström Laboratory, Uppsala University, SE-751 21 Uppsala (Sweden); Tengstrand, Olof [Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden); Flink, Axel [Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden); Impact Coatings AB, Westmansgatan 29, SE-582-16 Linköping (Sweden); Eklund, Per; Hultman, Lars [Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden); Jansson, Ulf [Department of Chemistry, The Ångström Laboratory, Uppsala University, SE-751 21 Uppsala (Sweden)

    2013-10-31

    Two series of Nb–Si–C thin films of different composition have been deposited using DC magnetron sputtering. In the first series the carbon content was kept at about 55 at.% while the Si/Nb ratio was varied and in the second series the C/Nb ratio was varied instead while the Si content was kept at about 45 at.%. The microstructure is strongly dependent on Si content and Nb–Si–C films containing more than 25 at.% Si exhibit an amorphous structure as determined by X-ray diffraction. Transmission electron microscopy, however, induces crystallisation during analysis, thus obstructing a more detailed analysis of the amorphous structure. X-ray photo-electron spectroscopy suggests that the amorphous films consist of a mixture of chemical bonds such as Nb–Si, Nb–C, and Si–C. The addition of Si results in a hardness decrease from 22 GPa for the binary Nb–C film to 18 – 19 GPa for the Si-containing films, while film resistivity increases from 211 μΩcm to 3215 μΩcm. Comparison with recently published results on DC magnetron sputtered Zr–Si–C films, deposited in the same system using the same Ar-plasma pressure, bias, and a slightly lower substrate temperature (300 °C instead of 350 °C), shows that hardness is primarily dependent on the amount of Si–C bonds rather than type of transition metal. The reduced elastic modulus on the other hand shows a dependency on the type of transition metal for the films. These trends for the mechanical properties suggest that high wear resistant (high H/E and H{sup 3}/E{sup 2} ratio) Me–Si–C films can be achieved by appropriate choice of film composition and transition metal. - Highlights: • Si reduces crystallinity, amorphous structure for films containing > 25 at.% Si. • Electron beam induced crystallization during transmission electron microscopy. • Hardness and resistivity are primarily dependent on the relative amount of C–Si bonds.

  9. Aluminium-induced crystallization of amorphous silicon films deposited by DC magnetron sputtering on glasses

    Energy Technology Data Exchange (ETDEWEB)

    Kezzoula, F., E-mail: kezzoula@usa.com [UDTS 2Bd Frantz Fanon 7 merveilles Algiers (Algeria); Laboratory of Materials, Mineral and Composite (LMMC), Boumerdes University (Algeria); Hammouda, A. [UPR CNRS 3079 CEMHTI - 1D Avenue de la Recherche Scientifique, 45071 Orleans Cedex 2 (France); Equipe Couches Minces, Laboratoire de Physique des Materiaux, Faculte de Physique, USTHB, Algiers (Algeria); Universite d' Orleans, 45067 Orleans Cedex 2 (France); Kechouane, M. [Equipe Couches Minces, Laboratoire de Physique des Materiaux, Faculte de Physique, USTHB, Algiers (Algeria); Simon, P. [UPR CNRS 3079 CEMHTI - 1D Avenue de la Recherche Scientifique, 45071 Orleans Cedex 2 (France); Universite d' Orleans, 45067 Orleans Cedex 2 (France); Abaidia, S.E.H. [Laboratory of Materials, Mineral and Composite (LMMC), Boumerdes University (Algeria); Keffous, A. [UDTS 2Bd Frantz Fanon 7 merveilles Algiers (Algeria); Cherfi, R. [Equipe Couches Minces, Laboratoire de Physique des Materiaux, Faculte de Physique, USTHB, Algiers (Algeria); Menari, H.; Manseri, A. [UDTS 2Bd Frantz Fanon 7 merveilles Algiers (Algeria)

    2011-09-15

    Amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) films were deposited by DC magnetron sputtering technique with argon and hydrogen plasma mixture on Al deposited by thermal evaporation on glass substrates. The a-Si/Al and a-Si:H/Al thin films were annealed at different temperatures ranging from 250 to 550 deg. C during 4 h in vacuum-sealed bulb. The effects of annealing temperature on optical, structural and morphological properties of as-grown as well as the vacuum-annealed a-Si/Al and a-Si:H/Al thin films are presented in this contribution. The averaged transmittance of a-Si:H/Al film increases upon increasing the annealing temperature. XRD measurements clearly evidence that crystallization is initiated at 450 deg. C. The number and intensity of diffraction peaks appearing in the diffraction patterns are more important in a-Si:H/Al than that in a-Si/Al layers. Results show that a-Si:H films deposited on Al/glass crystallize above 450 deg. C and present better crystallization than the a-Si layers. The presence of hydrogen induces an improvement of structural properties of poly-Si prepared by aluminium-induced crystallization (AIC).

  10. Effect of amorphous C films deposited by RF magnetron sputtering on smoothing K9 glass substrate

    Science.gov (United States)

    Deng, Songwen; Qi, Hongji; Wei, Chaoyang; Yi, Kui; Fan, Zhengxiu; Shao, Jianda

    2009-12-01

    Soft X-ray multilayer reflectors must be deposited on super-smooth surface such as super-polished silicon wafers or glasses, which are complicate, time-consuming and expensive to produce. To overcome this shortage, C films deposited by RF magnetron sputtering were considered to smooth the K9 glass substrates' surface in the present paper. The structure of C films was systematically studied by XRD and Raman spectrum. The surface morphology and rms-roughness were obtained by AFM. Then, we calculated the impact of the C layers on the reflectivity curve of Mo/Si soft X-ray multilayer reflector around 13.5 nm. The C films exhibit typical amorphous state. With the increasing of power and thickness, the content of sp3 hybrid bonding decreases while the amount or size of well-organized graphite clusters increases. The surface rms-roughness decreases from 2.4 nm to 0.62 nm after smoothed by an 80 nm thick C layer deposited in 500 W, which is the smoothest C layer surface we have obtained. The calculation results show that the theoretical normal incidence reflectivity of Mo/Si multilayer at 13.5 nm increases from 7% to 63%.

  11. STEM-EELS analysis reveals stable high-density He in nanopores of amorphous silicon coatings deposited by magnetron sputtering.

    Science.gov (United States)

    Schierholz, Roland; Lacroix, Bertrand; Godinho, Vanda; Caballero-Hernández, Jaime; Duchamp, Martial; Fernández, Asunción

    2015-02-20

    A broad interest has been showed recently on the study of nanostructuring of thin films and surfaces obtained by low-energy He plasma treatments and He incorporation via magnetron sputtering. In this paper spatially resolved electron energy-loss spectroscopy in a scanning transmission electron microscope is used to locate and characterize the He state in nanoporous amorphous silicon coatings deposited by magnetron sputtering. A dedicated MATLAB program was developed to quantify the helium density inside individual pores based on the energy position shift or peak intensity of the He K-edge. A good agreement was observed between the high density (∼35-60 at nm(-3)) and pressure (0.3-1.0 GPa) values obtained in nanoscale analysis and the values derived from macroscopic measurements (the composition obtained by proton backscattering spectroscopy coupled to the macroscopic porosity estimated from ellipsometry). This work provides new insights into these novel porous coatings, providing evidence of high-density He located inside the pores and validating the methodology applied here to characterize the formation of pores filled with the helium process gas during deposition. A similar stabilization of condensed He bubbles has been previously demonstrated by high-energy He ion implantation in metals and is newly demonstrated here using a widely employed methodology, magnetron sputtering, for achieving coatings with a high density of homogeneously distributed pores and He storage capacities as high as 21 at%.

  12. Growth and Physical Structure of Amorphous Boron Carbide Deposited by Magnetron Sputtering on a Silicon Substrate with a Titanium Interlayer

    Directory of Open Access Journals (Sweden)

    Roberto Caniello

    2013-01-01

    Full Text Available Multilayer amorphous boron carbide coatings were produced by radiofrequency magnetron sputtering on silicon substrates. To improve the adhesion, titanium interlayers with different thickness were interposed between the substrate and the coating. Above three hundreds nanometer, the enhanced roughness of the titanium led to the growth of an amorphous boron carbide with a dense and continuing columnar structure, and no delamination effect was observed. Correspondingly, the adhesion of the coating became three time stronger than in the case of a bare silicon substrate. Physical structure and microstructural proprieties of the coatings were investigated by means of a scan electron microscopy, atomic force microscopy and X-ray diffraction. The adhesion of the films was measured by a scratch tester.

  13. Solar Hydrogen Production by Amorphous Silicon Photocathodes Coated with a Magnetron Sputter Deposited Mo2C Catalyst.

    Science.gov (United States)

    Morales-Guio, Carlos G; Thorwarth, Kerstin; Niesen, Bjoern; Liardet, Laurent; Patscheider, Jörg; Ballif, Christophe; Hu, Xile

    2015-06-10

    Coupling of Earth-abundant hydrogen evolution catalysts to photoabsorbers is crucial for the production of hydrogen fuel using sunlight. In this work, we demonstrate the use of magnetron sputtering to deposit Mo2C as an efficient hydrogen evolution reaction catalyst onto surface-protected amorphous silicon (a-Si) photoabsorbers. The a-Si/Mo2C photocathode evolves hydrogen under simulated solar illumination in strongly acidic and alkaline electrolytes. Onsets of photocurrents are observed at potentials as positive as 0.85 V vs RHE. Under AM 1.5G (1 sun) illumination, the photocathodes reach current densities of -11.2 mA cm(-2) at the reversible hydrogen potential in 0.1 M H2SO4 and 1.0 M KOH. The high photovoltage and low-cost of the Mo2C/a-Si assembly make it a promising photocathode for solar hydrogen production.

  14. Hydrogen related crystallization in intrinsic hydrogenated amorphous silicon films prepared by reactive radiofrequency magnetron sputtering at low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Senouci, D. [Laboratoire de Genie Physique, Universite Ibn-Khaldoun, 14000 Tiaret (Algeria); LPCMME, Departement de Physique, Universite d' Oran Es-senia, 3100, Oran (Algeria); Baghdad, R., E-mail: r_baghdad@mail.univ-tiaret.dz [Laboratoire de Genie Physique, Universite Ibn-Khaldoun, 14000 Tiaret (Algeria); Belfedal, A.; Chahed, L. [LPCMME, Departement de Physique, Universite d' Oran Es-senia, 3100, Oran (Algeria); Portier, X. [CIMAP, CEA, CNRS UMR 6252-ENSICAEN, UCBN, 6 Bvd Marechal Juin, 14050 Caen Cedex (France); Charvet, S. [LPMC, UFR des Sciences, Universite de Picardie Jules Verne, 33 rue Saint-Leu, 80039 Amiens (France); Kim, K.H. [LPICM, Laboratoire de Physique des Interfaces et Couches Minces, CNRS UMR 7647, Ecole Polytechnique, 91128 Palaiseau (France); TOTAL S.A., Gas and Power, R and D Division, Courbevoie (France); Roca i Cabarrocas, P. [LPICM, Laboratoire de Physique des Interfaces et Couches Minces, CNRS UMR 7647, Ecole Polytechnique, 91128 Palaiseau (France); Zellama, K. [LPMC, UFR des Sciences, Universite de Picardie Jules Verne, 33 rue Saint-Leu, 80039 Amiens (France)

    2012-11-01

    We present an investigation on the transition from amorphous to nanocrystalline silicon and associated hydrogen changes during the first steps of hydrogenated nanocrystalline silicon growth for films elaborated by reactive radiofrequency magnetron sputtering at a substrate temperature as low as room temperature and for deposition times varying from 3 to 60 min. Complementary experimental techniques have been used to characterize the films in their as-deposited state. They are completed by thermal hydrogen effusion experiments conducted in the temperature range, from room temperature to 800 Degree-Sign C. The results show that, during the initial stages of growth, the presence of a hydrogen-rich layer is necessary to initiate the crystallization process. - Highlights: Black-Right-Pointing-Pointer Nanocrystalline silicon growth at room temperature. Black-Right-Pointing-Pointer Transition from amorphous to nanocrystalline silicon. Black-Right-Pointing-Pointer Chemical reactions of H atoms with strained Si-Si bonds. Black-Right-Pointing-Pointer H selective etching and chemical transport caused the silicon nucleation.

  15. Nano-Crystallization of High-Entropy Amorphous NbTiAlSiWxNy Films Prepared by Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Wenjie Sheng

    2016-06-01

    Full Text Available High-entropy amorphous NbTiAlSiWxNy films (x = 0 or 1, i.e., NbTiAlSiNy and NbTiAlSiWNy were prepared by magnetron sputtering method in the atmosphere of a mixture of N2 + Ar (N2 + Ar = 24 standard cubic centimeter per minute (sccm, where N2 = 0, 4, and 8 sccm. All the as-deposited films present amorphous structures, which remain stable at 700 °C for over 24 h. After heat treatment at 1000 °C the films began to crystalize, and while the NbTiAlSiNy films (N2 = 4, 8 sccm exhibit a face-centered cubic (FCC structure, the NbTiAlSiW metallic films show a body-centered cubic (BCC structure and then transit into a FCC structure composed of nanoscaled particles with increasing nitrogen flow rate. The hardness and modulus of the as-deposited NbTiAlSiNy films reach maximum values of 20.5 GPa and 206.8 GPa, respectively. For the as-deposited NbTiAlSiWNy films, both modulus and hardness increased to maximum values of 13.6 GPa and 154.4 GPa, respectively, and then decrease as the N2 flow rate is increased. Both films could be potential candidates for protective coatings at high temperature.

  16. Magnetron sputtering source

    Science.gov (United States)

    Makowiecki, Daniel M.; McKernan, Mark A.; Grabner, R. Fred; Ramsey, Philip B.

    1994-01-01

    A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal.

  17. Influence of plasma-generated negative oxygen ion impingement on magnetron sputtered amorphous SiO{sub 2} thin films during growth at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Macias-Montero, M.; Garcia-Garcia, F. J.; Alvarez, R.; Gil-Rostra, J.; Gonzalez, J. C.; Gonzalez-Elipe, A. R.; Palmero, A. [Instituto de Ciencia de Materiales de Sevilla (CSIC-US), Americo Vespucio 49, 41092 Seville (Spain); Cotrino, J. [Instituto de Ciencia de Materiales de Sevilla (CSIC-US), Americo Vespucio 49, 41092 Seville (Spain); Departamento de Fisica Atomica, Molecular y Nuclear, Universidad de Sevilla, Avda. Reina Mercedes, s/n, 42022 Seville (Spain)

    2012-03-01

    Growth of amorphous SiO{sub 2} thin films deposited by reactive magnetron sputtering at low temperatures has been studied under different oxygen partial pressure conditions. Film microstructures varied from coalescent vertical column-like to homogeneous compact microstructures, possessing all similar refractive indexes. A discussion on the process responsible for the different microstructures is carried out focusing on the influence of (i) the surface shadowing mechanism, (ii) the positive ion impingement on the film, and (iii) the negative ion impingement. We conclude that only the trend followed by the latter and, in particular, the impingement of O{sup -} ions with kinetic energies between 20 and 200 eV, agrees with the resulting microstructural changes. Overall, it is also demonstrated that there are two main microstructuring regimes in the growth of amorphous SiO{sub 2} thin films by magnetron sputtering at low temperatures, controlled by the amount of O{sub 2} in the deposition reactor, which stem from the competition between surface shadowing and ion-induced adatom surface mobility.

  18. Determination of the optical bandgap and disorder energies of thin amorphous SiC and AlN films produced by radio frequency magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Guerra, J A; Montanez, L; Galvez, G; De Zela, F; Weingaertner, R [Departamento de Ciencias, Seccion Fisica, Pontificia Universidad Catolica del Peru (Peru); Erlenbach, O; Winnacker, A, E-mail: guerra.jorgea@pucp.edu.pe [Department of Material Science 6, University of Erlangen-Nuernberg (Germany)

    2011-01-01

    Amorphous aluminum nitrite and silicon carbide (a-AlN and a-SiC) thin films were prepared by radio frequency magnetron sputtering. Due to the deposition method and production conditions the deposited films grown in amorphous state. We systematically measure the optical bandgap through optical transmission spectroscopy and its change with a cumulative thermal annealing. The results show a linear relation between the Tauc-gap and the Tauc-slope for both AlN and SiC films, which can be explained analytically from the existence of an Urbach focus, and therefore can be used to determine the Urbach focus or to ensure the correct usage of the bandgap determination methods.

  19. Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Bakoglidis, Konstantinos D., E-mail: konba@ifm.liu.se; Schmidt, Susann; Garbrecht, Magnus; Ivanov, Ivan G.; Jensen, Jens; Greczynski, Grzegorz; Hultman, Lars [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)

    2015-09-15

    The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CN{sub x}) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CN{sub x} films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N{sub 2}/Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, V{sub s}, was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at V{sub s} ≥ 60 V, V{sub s} ≥ 100 V, and V{sub s} = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of V{sub s} for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all V{sub s}, while CN{sub x} films deposited by MFMS showed residual stresses up to −4.2

  20. Li metal coated with amorphous Li3PO4 via magnetron sputtering for stable and long-cycle life lithium metal batteries

    Science.gov (United States)

    Wang, Liping; Wang, Qingji; Jia, Weishang; Chen, Shulin; Gao, Peng; Li, Jingze

    2017-02-01

    Lithium metal with high theoretical capacity (3860 mAh/g) and low operational voltage (-3.04 V vs. standard hydrogen electrode) reflects to be one of the most high energy density anodes for energy storage devices. While, its high chemical activity to continuously react with electrolytes causing low coulombic efficiency and formation of lithium dendrites leading safety concern limits practical applications. To conquer these challenges, amorphous Li3PO4 thin films with thickness of 0-200 nm are directly coated on the surface of Li metal foil via magnetron sputtering. The as-prepared Li3PO4 has almost insulated property with electronic conductivity of 1.4 × 10-10 S/cm and ionic conductivity of 2.8 × 10-8 S/cm. The conformal coating layer Li3PO4 can successfully suppress the lithium dendrites growth and improve its life span. The remarkable improvements of the Li3PO4-coated Li electrodes are mainly attributed to high chemical stability as well as amorphous nature of Li3PO4, which leads layer-by-layer growth Li film rather than islands form dendrites.

  1. Advanced TiC/a-C : H nanocomposite coatings deposited by magnetron sputtering

    NARCIS (Netherlands)

    Pei, Y.T.; Galvan, D.; Hosson, J.Th.M. De; Strondl, C.

    2006-01-01

    TiC/a-C:H nanocomposite coatings have been deposited by magnetron Sputtering. They consist of 2-5 nm TiC nanocrystallites embedded in the amorphous hydrocarbon (a-C:H) matrix. A transition from a Columnar to a glassy microstructure has been observed in the nanocomposite coatings with increasing subs

  2. Controlled formation of anatase and rutile TiO2 thin films by reactive magnetron sputtering

    NARCIS (Netherlands)

    Rafieian, Damon; Ogieglo, Wojciech; Savenije, Tom; Lammertink, Rob G.H.

    2015-01-01

    We discuss the formation of TiO2 thin films via DC reactive magnetron sputtering. The oxygen concentration during sputtering proved to be a crucial parameter with respect to the final film structure and properties. The initial deposition provided amorphous films that crystallise upon annealing to an

  3. GaAs Films Prepared by RF-Magnetron Sputtering

    Energy Technology Data Exchange (ETDEWEB)

    L.H. Ouyang; D.L. Rode; T. Zulkifli; B. Abraham-Shrauner; N. Lewis; M.R. Freeman

    2001-08-01

    The authors reported on the optical absorption, adhesion, and microstructure of RF-magnetron sputtered films of hydrogenated amorphous and microcrystalline GaAs films for the 1 to 25 {micro}m infrared wavelength rate. Sputtering parameters which were varied include sputtering power, temperature and pressure, and hydrogen sputtering-gas concentration. TEM results show a sharp transition from purely amorphous GaAs to a mixture of microcrystalline GaAs in an amorphous matrix at 34 {+-} 2 C. By optimizing the sputtering parameters, the optical absorption coefficient can be decreased below 100 cm{sup -1} for wavelengths greater than about 1.25 {micro}m. These results represent the lowest reported values of optical absorption for sputtered films of GaAs directly measured by spectrophotometry for the near-infrared wavelength region.

  4. 射频磁控溅射低温制备非晶铟镓锌氧薄膜晶体管%Fabrication of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor at Low Temperature by RF Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    信恩龙; 李喜峰; 陈龙龙; 石继锋; 李春亚; 张建华

    2012-01-01

    The indium gallium zinc oxide (IGZO) thin films were fabricated by RF magnetron sputtering at room temperature in this paper. The crystal structure, surface morphology, and optical electrical of the IGZO films were investigated by X-ray diffraction ( XRD) , atom force microscopy (AFM) , and photometry, respectively. The results revealed that the IGZO film was amorphous, the surface of the films was uniform and smooth. A good optical transmittance of over 80% was obtained in the visible light. The IGZO thin film transistors were successfully fabricated at low temperature ( < 200℃ ) using the room temperature sputtering IGZO thin film as the active layer. The field effect mobility of a-IGZO TFT was larger than 6. 0 cm2 · V-1·s-1. The device's on/off ratio was 10~7, threshold voltage was 1.2 V and subthreshold voltage swing is 0.9 V/ dec. Constant bias stress testing showed that the a-IGZO TFT threshold voltage exhibited positive shifts as time increased.%利用射频磁控溅射技术室温制备了铟镓锌氧(IGZO)薄膜,采用X射线衍射(XRD)表征薄膜的晶体结构,原子力显微镜(AFM)观察其表面形貌,分光光度计测量其透光率.结果表明:室温制备的IGZO薄膜为非晶态且薄膜表面均匀平整,可见光透射率大于80%.将室温制备的IGZO薄膜作为有源层,在低温(<200℃)条件下成功地制备了铟镓锌氧薄膜晶体管(a-IGZO TFT),获得的a-IGZO-TFT器件的场效应迁移率大于6.0cm2·V-1·s-1,开关比约为107,阈值电压为1.2V,亚阈值摆蝠(S)约为0.9 V/dec,偏压应力测试a-IGZO TFT阈值电压随时间向右漂移.

  5. Collimated Magnetron Sputter Deposition for Mirror Coatings

    DEFF Research Database (Denmark)

    Vickery, A.; Cooper-Jensen, Carsten P.; Christensen, Finn Erland

    2008-01-01

    At the Danish National Space Center (DNSC), a planar magnetron sputtering chamber has been established as a research and production coating facility for curved X-ray mirrors for hard X-ray optics for astronomical X-ray telescopes. In the following, we present experimental evidence that a collimat......At the Danish National Space Center (DNSC), a planar magnetron sputtering chamber has been established as a research and production coating facility for curved X-ray mirrors for hard X-ray optics for astronomical X-ray telescopes. In the following, we present experimental evidence...... that a collimation of the sputtered particles is an efficient way to suppress the interfacial roughness of the produced multilayer. We present two different types of collimation optimized for the production of low roughness curved mirrors and flat mirrors, respectively....

  6. Anisotropies in magnetron sputtered carbon nitride thin films

    Science.gov (United States)

    Hellgren, Niklas; Johansson, Mats P.; Broitman, Esteban; Hultman, Lars; Sundgren, Jan-Eric

    2001-04-01

    Carbon nitride CNx (0⩽x⩽0.35) thin films, deposited by reactive dc magnetron sputtering in Ar/N2 discharges have been studied with respect to microstructure using electron microscopy, and elastic modulus using nanoindentation and surface acoustic wave analyses. For growth temperature of 100 °C, the films were amorphous, and with an isotropic Young's modulus of ˜170-200 GPa essentially unaffected by the nitrogen fraction. The films grown at elevated temperatures (350-550 °C) show anisotropic mechanical properties due to a textured microstructure with standing basal planes, as observed from measuring the Young's modulus in different directions. The modulus measured in the plane of the film was ˜60-80 GPa, while in the vertical direction the modulus increased considerably from ˜25 to ˜200 GPa as the nitrogen content was increased above ˜15 at. %.

  7. Coating metals on micropowders by magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Magnetron sputtering was used to coat various metals on micropowder surfaces. By using this method, the fine particles are better dispersed and can therefore be coated more homogeneously. The micro-powders used include cenospheres from fly ash of coal-burning electric power plants (diameter 40-200 μm and particle density 0.7±0.1 g/cm3), as well as carborundum particles of different sizes. Aluminum, silver, copper, cobalt and nickel were used as the coating metals. Tests showed that the coated metal film was compact adhering tightly on the base powders, and the coated powders possess adequate flow properties.

  8. Characterization of hydrogenated and deuterated silicon carbide films codeposited by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Pantelica, D., E-mail: pantel@ifin.nipne.ro [Horia Hulubei National Institute for Physics and Nuclear Engineering (IFIN-HH), P.O.B. MG-6, RO-077125, 30 Reactorului St., Magurele (Romania); Ionescu, P.; Petrascu, H. [Horia Hulubei National Institute for Physics and Nuclear Engineering (IFIN-HH), P.O.B. MG-6, RO-077125, 30 Reactorului St., Magurele (Romania); Dracea, M.D. [Horia Hulubei National Institute for Physics and Nuclear Engineering (IFIN-HH), P.O.B. MG-6, RO-077125, 30 Reactorului St., Magurele (Romania); Faculty of Physics, University of Bucharest, 405 Atomistilor Str., RO-077125, P.O.B. MG-11, Magurele-Bucharest (Romania); Statescu, M. [Horia Hulubei National Institute for Physics and Nuclear Engineering (IFIN-HH), P.O.B. MG-6, RO-077125, 30 Reactorului St., Magurele (Romania); Matei, E.; Rasoga, O. [National Institute of Materials Physics, RO-077125, 105 bis Atomistilor Str., Magurele-Bucharest (Romania); Stancu, C. [National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Str., RO-077125 Magurele-Bucharest (Romania); Marascu, V. [National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Str., RO-077125 Magurele-Bucharest (Romania); Faculty of Physics, University of Bucharest, 405 Atomistilor Str., RO-077125, P.O.B. MG-11, Magurele-Bucharest (Romania); Ion, V. [National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Str., RO-077125 Magurele-Bucharest (Romania); Acsente, T., E-mail: tomy@infim.ro [National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Str., RO-077125 Magurele-Bucharest (Romania); Dinescu, G. [National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Str., RO-077125 Magurele-Bucharest (Romania)

    2016-03-15

    In this work we present the deposition of amorphous SiC thin films by radiofrequency dual magnetron sputtering. The dependence of the deposited films properties over the discharges electrical power and the effect of hydrogenous species (H{sub 2} and/or D{sub 2}) addition to main discharge gas (Ar) were investigated. Accurate elemental analysis of the samples, including detection of hydrogen and deuterium, was performed by ion beam analysis (IBA) techniques: RBS (Rutherford Backscattering Spectrometry) and ERDA (Elastic Recoil Detection Analysis). SiC{sub x} thin films with thicknesses between 1700 and 4500 Å and C/Si ratio between 0.2/1 and 1.25/1 were obtained in different deposition conditions. The results prove that thin films of amorphous SiC with well controlled properties can be produced using radiofrequency dual magnetron sputtering.

  9. Properties of TiO2 Thin Films Prepared by Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    With rapid progressive application of TiO2 thin films, magnetron sputtering becomes a very interesting method to prepare such multi-functional thin films. This paper focuses on influences of various deposition processes and deposition rate on the structures and properties of TiO2 thin films. Anatase, rutile or amorphous TiO2 films with various crystalline structures and different photocatalytic, optical and electrical properties can be produced by varying sputtering gases, substrate temperature, annealing process, deposition rate and the characteristics of magnetron sputtering. This may in turn affect the functions of TiO2 films in many applications. Furthermore, TiO2-based composites films can overcome many limitations and improve the properties of TiO2 films.

  10. Fabrication of Optical Multilayer Devices from Porous Silicon Coatings with Closed Porosity by Magnetron Sputtering.

    Science.gov (United States)

    Caballero-Hernández, Jaime; Godinho, Vanda; Lacroix, Bertrand; Jiménez de Haro, Maria C; Jamon, Damien; Fernández, Asunción

    2015-07-01

    The fabrication of single-material photonic-multilayer devices is explored using a new methodology to produce porous silicon layers by magnetron sputtering. Our bottom-up methodology produces highly stable amorphous porous silicon films with a controlled refractive index using magnetron sputtering and incorporating a large amount of deposition gas inside the closed pores. The influence of the substrate bias on the formation of the closed porosity was explored here for the first time when He was used as the deposition gas. We successfully simulated, designed, and characterized Bragg reflectors and an optical microcavity that integrates these porous layers. The sharp interfaces between the dense and porous layers combined with the adequate control of the refractive index and thickness allowed for excellent agreement between the simulation and the experiments. The versatility of the magnetron sputtering technique allowed for the preparation of these structures for a wide range of substrates such as polymers while also taking advantage of the oblique angle deposition to prepare Bragg reflectors with a controlled lateral gradient in the stop band wavelengths.

  11. Chemical Structure of Carbon Nitride Films Prepared by MW-ECR Plasma Enhanced Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    XUJun,GAOPeng; DINGWan-yu; LIXin; DENGXin-lu; DONGChuang

    2004-01-01

    Amorphous carbon nitride thin films were prepared by plasma-enhanced DC magnetron sputtering using twinned microwave electron cyclotron resonance plasma sources. Chemical structure of deposited films was investigated using X-ray photoelectron spectroscopy and Fourier transtorm infrared spectroscopy. The results indicate that the deposition rate is strongly affected by direct current bias, and the films are mainly composed of a single amorphous carbon nitride phase with N/C ratio close to C3N4, and the bonding is predominantly of C-N type.

  12. Amorphous LiCoO{sub 2} thin films on Li{sub 1+x+y}Al{sub x}Ti{sub 2-x}Si{sub y}P{sub 3-y}O{sub 12} prepared by radio frequency magnetron sputtering for all-solid-state Li-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Xie, J., E-mail: xiejian1977@zju.edu.c [Department of Materials Science and Engineering, Zhejiang University, Zheda Road no.38, Hangzhou, Zhejiang Province 310027 (China); Imanishi, N.; Zhang, T.; Hirano, A.; Takeda, Y.; Yamamoto, O. [Department of Chemistry, Faculty of Engineering, Mie University, 1577 Kurimamachiya-cho, Tsu, Mie 514-8507 (Japan); Cao, G.S.; Zhao, X.B. [Department of Materials Science and Engineering, Zhejiang University, Zheda Road no.38, Hangzhou, Zhejiang Province 310027 (China)

    2010-07-30

    Amorphous LiCoO{sub 2} thin films were deposited on the NASICON-type glass ceramics, Li{sub 1+x+y}Al{sub x}Ti{sub 2-x}Si{sub y}P{sub 3-y}O{sub 12} (LATSP), by radio frequency (RF) magnetron sputtering below 180 {sup o}C. The as-deposited LiCoO{sub 2} thin films were characterized by X-ray diffraction, scanning electron microscopy and atomic force microscope. All-solid-state Li/PEO{sub 18}-Li (CF{sub 3}SO{sub 2}){sub 2}N/LATSP/LiCoO{sub 2}/Au cells were fabricated using the amorphous film. The electrochemical performance of the cells was investigated by galvanostatic cycling, cyclic voltammetry, potentiostatic intermittent titration technique and electrochemical impedance spectroscopy. It was found that the amorphous LiCoO{sub 2} thin film shows a promising electrochemical performance, making it a potential application in microbatteries for microelectronic devices.

  13. Crystallographic properties of magnetron sputtered barium ferrite films

    Energy Technology Data Exchange (ETDEWEB)

    Capraro, S. [Laboratoire DIOM, University of Saint-Etienne, 23 rue Michelon, 42023 Saint-Etienne Cedex (France)]. E-mail: stephane.capraro@univ-st-etienne.fr; Berre, M. Le [LPM, UMR 5511, INSA Lyon, 7 av. Jean Capelle, 69621 Villeurbanne Cedex (France); Chatelon, J.P. [Laboratoire DIOM, University of Saint-Etienne, 23 rue Michelon, 42023 Saint-Etienne Cedex (France); Bayard, B. [Laboratoire DIOM, University of Saint-Etienne, 23 rue Michelon, 42023 Saint-Etienne Cedex (France); Joisten, H. [CEA-LETI, 17 rue des martyrs, 38041 Grenoble Cedex (France); Canut, C. [LPMCN, University Lyon I, 43 Bvd. du 11 novembre 1918, 69622 Villerbanne, Cedex (France); Barbier, D. [LPM, UMR 5511, INSA Lyon, 7 av. Jean Capelle, 69621 Villeurbanne Cedex (France); Rousseau, J.J. [Laboratoire DIOM, University of Saint-Etienne, 23 rue Michelon, 42023 Saint-Etienne Cedex (France)

    2004-09-15

    The development of devices combining a ferrite with a semiconductor chip is a major focus of current research. Barium hexaferrite (BaFe{sub 12}O{sub 19} or BaM) thick films are deposited here using a RF magnetron sputtering system. Films are amorphous and non magnetic after deposition. Post-deposition thermal annealing is employed to make the films crystallize. The effects of the substrate, thermal annealing process, thickness, substrate temperature on crystallographic properties and stoichiometry are studied using a X-ray diffractometry (XRD) and Rutherford back-scattering (RBS). The in-depth homogeneity of Ba, Fe and O is evaluated by secondary ion mass spectroscopy (SIMS). The study shows a good crystallization of BaM films and there is a preferential orientation among the crystallographic planes (1 0 1), (2 0 0), (2 0 3), (1 0 2), (1 1 0) and (2 0 5) when BaM films are prepared at low RF power and when the substrate is heated. For several elaboration parameters, grains size is in the range of 25 and 40 nm and BaM films are stoichiometric with regard to the target stoichiometry.

  14. Optical properties of diamond like carbon films containing copper, grown by high power pulsed magnetron sputtering and direct current magnetron sputtering: Structure and composition effects

    Energy Technology Data Exchange (ETDEWEB)

    Meškinis, Š., E-mail: sarunas.meskinis@ktu.lt; Čiegis, A.; Vasiliauskas, A.; Šlapikas, K.; Tamulevičius, T.; Tamulevičienė, A.; Tamulevičius, S.

    2015-04-30

    In the present study chemical composition, structure and optical properties of hydrogenated diamond like carbon films containing copper (DLC:Cu films) deposited by reactive magnetron sputtering were studied. Different modes of deposition — direct current (DC) sputtering and high power pulsed magnetron sputtering (HIPIMS) as well as two configurations of the magnetron magnetic field (balanced and unbalanced) were applied. X-ray diffractometry, Raman scattering spectroscopy, energy-dispersive X-ray spectroscopy and atomic force microscopy were used to study the structure and composition of the films. It was shown that by using HIPIMS mode contamination of the cathode during the deposition of DLC:Cu films can be suppressed. In all cases oxygen atomic concentration in the films was in 5–10 at.% range and it increased with the copper atomic concentration. The highest oxygen content was observed in the films deposited employing low ion/neutral ratio balanced DC magnetron sputtering process. According to the analysis of the parameters of Raman scattering spectra, sp{sup 3}/sp{sup 2} bond ratio decreased with the increase of Cu atomic concentration in the DLC films. Clear dependence of the extinction, absorbance and reflectance spectra on copper atomic concentration in the films was observed independently of the method of deposition. Surface plasmon resonance effect was observed only when Cu atomic concentration in DLC:Cu film was at least 15 at.%. The maximum of the surface plasmon resonance peak of the absorbance spectra of DLC:Cu films was in 600–700 nm range and redshifted with the increase of Cu amount. The ratio between the intensities of the plasmonic peak and hydrogenated amorphous carbon related peak at ~ 220 nm both in the extinction and absorbance spectra as well as peak to background ratio of DLC:Cu films increased linearly with Cu amount in the investigated 0–40 at.% range. Reflectance of the plasmonic DLC:Cu films was in 30–50% range that could be

  15. Transparent conducting zinc oxide thin film prepared by off-axis rf magnetron sputtering

    Indian Academy of Sciences (India)

    M K Jayaraj; Aldrin Antony; Manoj Ramachandran

    2002-06-01

    Highly conducting and transparent ZnO : Al thin films were grown by off-axis rf magnetron sputtering on amorphous silica substrates without any post-deposition annealing. The electrical and optical properties of the films deposited at various substrate temperatures and target to substrate distances were investigated in detail. Optimized ZnO : Al films have conductivity of 2200 S cm–1 and average transmission in the visible range is higher than 85%. The conductivity and mobility show very little temperature dependence.

  16. Development of Nb3Sn coatings by magnetron sputtering for SRF cavities

    CERN Document Server

    Rosaz, G.; Leaux, F.; Motschmann, F.; Mydlarz, Z.; Taborelli, M.; Vollenberg, W.

    2016-01-01

    This paper presents the first results obtained on DC magnetron sputtering of Nb3Sn thin films dedicated to superconducting radio frequency cavities (SRF). Nb/Sn ratio of 3.76 and 3.2 have been obtained for Ar coating pressures of respectively 1.10-3 mbar and 5.10-2 mbar. According to XRD analyses both coating pressures lead to amorphous Nb3Sn layers that are not superconducting. Afterward, one coating has been annealed at 700°C, 750°C and 800°C under vacuum for 24h and exhibited for the three different temperatures the A15 cubic phase.

  17. Optical characterization of ZnO thin films deposited by RF magnetron sputtering method

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    This study investigated the process parameter effects on the structural and optical properties of ZnO thin film using radio frequency (RF) magnetron sputtering on amorphous glass substrates. The process parameters included RF power and working pressure. Results show that RF power was increased to promote the crystalline quality and decrease ZnO thin film defects. However, when the working pressure was increased to 3 Pa the ZnO thin film crystalline quality became worse. At a 200 W RF power and 1 Pa working pressure, the ZnO thin film with an optical band gap energy of 3.225 eV was obtained.

  18. Photocatalytic Property of TiO2 Films Deposited by Pulsed DC Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    Wenjie ZHANG; Shenglong ZHU; Ying LI; Fuhui WANG

    2004-01-01

    TiO2 thin films were prepared by DC magnetron sputtering with the oxygen flow rate higher than the threshold. The film deposited for 5 h was of anatase phase with a preferred orientation along the direction, but the films deposited for 2 and 3 h were amorphous. The transmittance and photocatalytic activity of the TiO2 films increased constantly with increasing film thickness. When the annealing temperature was lower than 700℃, only anatase grew in the TiO2 film. TiO2 phase changed from anatase to rutile when the annealing temperature was above 800℃. The photocatalytic activity decreased with increasing annealing temperature.

  19. Plasma diagnostics during magnetron sputtering of aluminum doped zinc oxide

    DEFF Research Database (Denmark)

    Stamate, Eugen; Crovetto, Andrea; Sanna, Simone

    2016-01-01

    Plasma parameters during magnetron sputtering of aluminum-doped zinc oxide are investigated with optical emission spectroscopy, electrostatic probes and mass spectrometry with the aim of understanding the role of negative ions of oxygen during the film growth and improving the uniformity of the f......Plasma parameters during magnetron sputtering of aluminum-doped zinc oxide are investigated with optical emission spectroscopy, electrostatic probes and mass spectrometry with the aim of understanding the role of negative ions of oxygen during the film growth and improving the uniformity...

  20. The structure of Cu-Al films prepared by unbalanced DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Musil, J.; Bell, A.J. [Czech Acad. of Sci., Prague (Czech Republic). Inst. of Phys.; Chepera, M.; Zeman, J. [Military Technical Institute, PO Box 574, 602 00 (Czech Republic)

    1997-11-25

    Recently, the formation of nanostructured and amorphous materials has been the focus of intense research owing to interest from a basic scientific point of view and their potential technological value. This paper reports on the variation in, and control of, the structure of Cu-Al films prepared in a state-of-the-art unbalanced DC magnetron sputtering system. The structure is shown to be considerably influenced by ion bombardment during growth with both the energy and ratio of impinging ions: arriving atoms playing dominant roles. In addition, the addition of different quantities of Al to the thin film is shown to have a dramatic impact on the structure. The conditions under which nanocrystalline Cu-Al films can be prepared are given. The films were deposited by the magnetron sputter ion plating (MSIP) process using negative substrate biases up to 1000 V and at different argon pressures down to 0.04 Pa. The structure of the films were determined from XRD analyses. An attempt to correlate obtained XRD spectra with the structure of the film is suggested. The resistivities of the films were measured using the four-point probe method, whilst the content of Al was determined from EDX measurements. (orig.) 15 refs.

  1. -AgCoO2/-ZnO heterojunction diode grown by rf magnetron sputtering

    Indian Academy of Sciences (India)

    K A Vanaja; Umananda M Bhatta; R S Ajimsha; S Jayalekshmi; M K Jayaraj

    2008-10-01

    -type transparent semiconducting AgCoO2 thin films were deposited by rf magnetron sputtering of sintered AgCoO2 target. The AgCoO2 films grown by rf sputtering were highly -axis oriented showing only (001) reflections in the X-ray diffraction pattern unlike in the case of amorphous films grown by pulsed laser deposition (PLD). The bulk powder of AgCoO2 was synthesized by hydrothermal process. The optical bandgap was estimated as 4.15 eV and has a transmission of about 50% in the visible region. The temperature dependence of conductivity shows a semiconducting behaviour. The positive sign of Seebeck coefficient (+220 VK–1) indicates -type conductivity. Transparent – heterojunction on glass substrate was fabricated by rf magnetron sputtering of -AgCoO2 and -type ZnO : Al thin films. The structure of the diode was glass/ITO/-ZnO/-AgCoO2. The junction between -AgCoO2 and -ZnO was found to be rectifying.

  2. Bimodal substrate biasing to control \\gamma-Al2O3 deposition during reactive magnetron sputtering

    CERN Document Server

    Prenzel, Marina; Stein, Adrian; von Keudell, Achim; Nahif, Farwah; Schneider, Jochen M

    2013-01-01

    Al2O3 thin films have been deposited at substrate temperatures between 500{\\deg}C to 600{\\deg}C by reactive magnetron sputtering using an additional arbitrary substrate bias to tailor the energy distribution of the incident ions. The films were characterized by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). The film structure being amorphous, nanocrystalline, or crystalline was correlated with characteristic ion energy distributions. The evolving crystalline structure is connected with different levels of displacements per atom (dpa) in the growing film as being derived from TRIM simulations. The boundary between the formation of crystalline films and amorphous or nanocrystalline films was at 0.9 dpa for a substrate temperature of 500{\\deg}C. This threshold shifts to 0.6 dpa for films grown at 550{\\deg}C.

  3. Ionized magnetron sputtering of aluminum(,2)oxygen(,3)

    Science.gov (United States)

    Gonzalez, Patrick Fernando

    2000-10-01

    This dissertation shows a detailed study of the conditions necessary for sputtering alumina using a novel variant of ionized magnetron sputtering (IMS) first demonstrated by Yamashita et. al. The study presented herein leverages concurrent research at our laboratory on high density plasmas, plasma characterization and charged particle beams research to demonstrate a new source capable of sputtering hydrated alumina films at high rates. High quality ceramics such as Al2O3 find uses in a variety of applications, and in particular, for mass storage applications. Consequently, there exists an ever-growing need to provide and improve the capability of growing thick insulating films. Ideally, the insulating film should be stoichiometric and able to be grown at rates high enough to be easily manufacturable. Alumina is a particularly attractive due to its high density, Na barrier properties, and stability and radiation resistance. However, high quality films are often difficult to achieve with conventional RF plasma due to extremely slow deposition rates and difficulties associated with system cooling. The preferred method is to reactively sputter Al from a solid target in an O2 ambient. Nevertheless, this process is inherently unstable and leads to arcing and uneven target wear when magnetrons are used. In this study, we build the sputtering source, evaluate, and maximize the deposition characteristics of alumina films sputtered from a solid target in an Ar/O2 ambient. Semi-crystalline (kappa + theta) alumina has been reported using a similar technique at temperatures as low 370 C. The difference in the system used herein is that RF power is used for both, the inductive and capacitive components. Additionally, we use a solid target made of sintered alumina throughout the experiment. A model is developed using regression analysis and compared to results obtained. Because plasma parameters can interact with each other, we explore ICP/CCP power interactions and gas influence

  4. Very low pressure high power impulse triggered magnetron sputtering

    Science.gov (United States)

    Anders, Andre; Andersson, Joakim

    2013-10-29

    A method and apparatus are described for very low pressure high powered magnetron sputtering of a coating onto a substrate. By the method of this invention, both substrate and coating target material are placed into an evacuable chamber, and the chamber pumped to vacuum. Thereafter a series of high impulse voltage pulses are applied to the target. Nearly simultaneously with each pulse, in one embodiment, a small cathodic arc source of the same material as the target is pulsed, triggering a plasma plume proximate to the surface of the target to thereby initiate the magnetron sputtering process. In another embodiment the plasma plume is generated using a pulsed laser aimed to strike an ablation target material positioned near the magnetron target surface.

  5. Method and apparatus for improved high power impulse magnetron sputtering

    Science.gov (United States)

    Anders, Andre

    2013-11-05

    A high power impulse magnetron sputtering apparatus and method using a vacuum chamber with a magnetron target and a substrate positioned in the vacuum chamber. A field coil being positioned between the magnetron target and substrate, and a pulsed power supply and/or a coil bias power supply connected to the field coil. The pulsed power supply connected to the field coil, and the pulsed power supply outputting power pulse widths of greater that 100 .mu.s.

  6. Application of magnetron sputtering for producing bioactive ceramic coatings on implant materials

    Indian Academy of Sciences (India)

    J Z Shi; C Z Chen; H J Yu; S J Zhang

    2008-11-01

    Radio frequency (RF) magnetron sputtering is a versatile deposition technique that can produce thin, uniform, dense calcium phosphate coatings. In this paper, principle and character of magnetron sputtering is introduced, and development of the hydroxyapatite and its composite coatings application is reviewed. In addition, influence of heat treatment on magnetron sputtered coatings is discussed. The heat treated coatings have been shown to exhibit bioactive behaviour both in vivo and in vitro. At last, the future application of the bioactive ceramic coating deposited by magnetron sputtering is mentioned.

  7. Characterization of nanostructured Ti-B-(N) coatings produced by direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Cartes, C. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla), Avda. Americo Vespucio 49, 41092 Sevilla (Spain)]. E-mail: clopez@icmse.csic.es; Martinez-Martinez, D. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla), Avda. Americo Vespucio 49, 41092 Sevilla (Spain); Sanchez-Lopez, J.C. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla), Avda. Americo Vespucio 49, 41092 Sevilla (Spain); Fernandez, A. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla), Avda. Americo Vespucio 49, 41092 Sevilla (Spain); Garcia-Luis, A. [Fundacion INASMET, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); Brizuela, M. [Fundacion INASMET, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); Onate, J.I. [Fundacion INASMET, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain)

    2007-02-26

    A series of Ti-B-(N) coatings prepared by dc magnetron sputtering using TiB{sub 2} targets in Ar/N{sub 2} gas mixtures has been chemically and structurally characterized by transmission electron microscopy, X-ray diffraction, electron energy-loss spectroscopy, and X-ray photoelectron spectroscopy. The influence of synthesis parameters such as applied heating power and nitrogen flow on the structure and chemical composition of the coatings has been studied. Independently of the experimental conditions employed during the synthesis, hexagonal TiB{sub 2} is the main crystalline phase present in the coatings. The use of N{sub 2} leads to the formation of an amorphous mixture of BN/TiN phases, as well as a diminution of the TiB{sub 2} crystalline phase. The influence of the composition and structure of the coatings on their hardness is also discussed.

  8. Controlled formation of anatase and rutile TiO2 thin films by reactive magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Damon Rafieian

    2015-09-01

    Full Text Available We discuss the formation of TiO2 thin films via DC reactive magnetron sputtering. The oxygen concentration during sputtering proved to be a crucial parameter with respect to the final film structure and properties. The initial deposition provided amorphous films that crystallise upon annealing to anatase or rutile, depending on the initial sputtering conditions. Substoichiometric films (TiOx<2, obtained by sputtering at relatively low oxygen concentration, formed rutile upon annealing in air, whereas stoichiometric films formed anatase. This route therefore presents a formation route for rutile films via lower (<500 °C temperature pathways. The dynamics of the annealing process were followed by in situ ellipsometry, showing the optical properties transformation. The final crystal structures were identified by XRD. The anatase film obtained by this deposition method displayed high carriers mobility as measured by time-resolved microwave conductance. This also confirms the high photocatalytic activity of the anatase films.

  9. Optical characterization of ZnO thin films deposited by RF magnetron sputtering method

    Institute of Scientific and Technical Information of China (English)

    TANG Ning; WANG JinLiang; XU HengXing; PENG HongYong; FAN Chao

    2009-01-01

    This study investigated the process parameter effects on the structural and optical properties of ZnO thin film using radio frequency(RF)magnetron sputtering on amorphous glass substrates.The process parameters included RF power and working pressure.Results show that RF power was increased to promote the crystalline quality and decrease ZnO thin film defects.However,when the working pressure was increased to 3 Pa the ZnO thin film crystalline quality became worse.At a 200 W RF power and 1 Pa working pressure,the ZnO thin film with an optical band gap energy of 3.225 eV was obtained.

  10. Surface properties and biocompatibility of nanostructured TiO2 film deposited by RF magnetron sputtering.

    Science.gov (United States)

    Majeed, Asif; He, Jie; Jiao, Lingrui; Zhong, Xiaoxia; Sheng, Zhengming

    2015-01-01

    Nanostructured TiO2 films are deposited on a silicon substrate using 150-W power from the RF magnetron sputtering at working pressures of 3 to 5 Pa, with no substrate bias, and at 3 Pa with a substrate bias of -50 V. X-ray diffraction (XRD) analysis reveals that TiO2 films deposited on unbiased as well as biased substrates are all amorphous. Surface properties such as surface roughness and wettability of TiO2 films, grown in a plasma environment, under biased and unbiased substrate conditions are reported according to the said parameters of RF power and the working pressures. Primary rat osteoblasts (MC3T3-E1) cells have been cultured on nanostructured TiO2 films fabricated at different conditions of substrate bias and working pressures. The effects of roughness and hydrophilicity of nanostructured TiO2 films on cell density and cell spreading have been discussed.

  11. Colored and transparent oxide thin films prepared by magnetron sputtering: the glass blower approach.

    Science.gov (United States)

    Gil-Rostra, Jorge; Chaboy, Jesús; Yubero, Francisco; Vilajoana, Antoni; González-Elipe, Agustín R

    2013-03-01

    This work describes the reactive magnetron sputtering processing at room temperature of several mixed oxide MxSiyOz thin films (M: Fe, Ni, Co, Mo, W, Cu) intended for optical, coloring, and aesthetic applications. Specific colors can be selected by adjusting the plasma gas composition and the Si-M ratio in the magnetron target. The microstructure and chemistry of the films are characterized by a large variety of techniques including X-ray photoemission spectroscopy, X-ray absorption spectroscopy (XAS), and infrared spectroscopy, while their optical properties are characterized by UV-vis transmission and reflection analysis. Particularly, XAS analysis of the M cations in the amorphous thin films has provided valuable information about their chemical state and local structure. It is concluded that the M cations are randomly distributed within the SiO2 matrix and that both the M concentration and its chemical state are the key parameters to control the final color of the films.

  12. Phase Structural Characteristics of ZrV2 Thin Film Prepared by Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    XU Shi-Lin; SHI Li-Qun

    2005-01-01

    @@ The thin film metal hydride has become an emerging field of research in metal hydride batteries for its good mechanical and hydrogenation properties. ZrV2 thin films have been prepared using a dc magnetron sputtering method, and the phase structure is investigated. Only amorphous or crystalline Zr and V mixture phases are achieved when substrates are heated during either to 400℃ or to 550 ℃. The annealing causes segregation of Zr and V in the film induced by strain-driven diffusion and interdiffusion between substrate Mo and film elements at high temperature, which results in the formation of mixture phases of C14, C15, Zr and V, but the content of C15 phase is not higher compared with that in the bulk material.

  13. Pressure-dependent transition from atoms to nanoparticles in magnetron sputtering: Effect on WSi2 film roughness and stress

    OpenAIRE

    2010-01-01

    We report on the transition between two regimes from several-atom clusters to much larger nanoparticles in Ar magnetron sputter deposition of WSi2, and the effect of nanoparticles on the properties of amorphous thin films and multilayers. Sputter deposition of thin films is monitored by in situ x-ray scattering, including x-ray reflectivity and grazing incidence small angle x-ray scattering. The results show an abrupt transition at an Ar background pressure Pc; the transition is associated wi...

  14. Development of magnetron sputtering simulator with GPU parallel computing

    Science.gov (United States)

    Sohn, Ilyoup; Kim, Jihun; Bae, Junkyeong; Lee, Jinpil

    2014-12-01

    Sputtering devices are widely used in the semiconductor and display panel manufacturing process. Currently, a number of surface treatment applications using magnetron sputtering techniques are being used to improve the efficiency of the sputtering process, through the installation of magnets outside the vacuum chamber. Within the internal space of the low pressure chamber, plasma generated from the combination of a rarefied gas and an electric field is influenced interactively. Since the quality of the sputtering and deposition rate on the substrate is strongly dependent on the multi-physical phenomena of the plasma regime, numerical simulations using PIC-MCC (Particle In Cell, Monte Carlo Collision) should be employed to develop an efficient sputtering device. In this paper, the development of a magnetron sputtering simulator based on the PIC-MCC method and the associated numerical techniques are discussed. To solve the electric field equations in the 2-D Cartesian domain, a Poisson equation solver based on the FDM (Finite Differencing Method) is developed and coupled with the Monte Carlo Collision method to simulate the motion of gas particles influenced by an electric field. The magnetic field created from the permanent magnet installed outside the vacuum chamber is also numerically calculated using Biot-Savart's Law. All numerical methods employed in the present PIC code are validated by comparison with analytical and well-known commercial engineering software results, with all of the results showing good agreement. Finally, the developed PIC-MCC code is parallelized to be suitable for general purpose computing on graphics processing unit (GPGPU) acceleration, so as to reduce the large computation time which is generally required for particle simulations. The efficiency and accuracy of the GPGPU parallelized magnetron sputtering simulator are examined by comparison with the calculated results and computation times from the original serial code. It is found that

  15. Particle contamination formation and detection in magnetron sputtering processes

    Energy Technology Data Exchange (ETDEWEB)

    Selwyn, G.S. [Los Alamos National Lab., NM (United States); Weiss, C.A. [Materials Research Corp., Congers, NY (United States). Sputtering Systems Div.; Sequeda, F.; Huang, C. [Seagate Peripherals Disk Div., Milpitas, CA (United States)

    1996-10-01

    Defects caused by particulate contamination are an important concern in the fabrication of thin film products. Often, magnetron sputtering processes are used for this purpose. Particle contamination can cause electrical shorting, pin holes, problems with photolithography, adhesion failure, as well as visual and cosmetic defects. Particle contamination generated during thin film processing can be detected using laser light scattering, a powerful diagnostic technique that provides real-time, {ital in-situ} imaging of particles > 0.3 {mu}m in diameter. Using this technique, the causes, sources and influences on particles in plasma and non-plasma and non-plasma processes may be independently evaluated and corrected. Several studies employing laser light scattering have demonstrated both homogeneous and heterogeneous causes of particle contamination. In this paper, we demonstrate that the mechanisms for particle generation, transport and trapping during magnetron sputter deposition are different from the mechanisms reported in previously studied plasma etch processes. During magnetron sputter deposition, one source of particle contamination is linked to portions of the sputtering target surface exposed to weaker plasma density. In this region, film redeposition is followed by filament or nodule growth and enhanced trapping which increases filament growth. Eventually the filaments effectively ``short circuit`` the sheath, causing high currents to flow through these features. This, in turn, causes heating failure of the filament fracturing and ejecting the filaments into the plasma and onto the substrate. Evidence of this effect has been observed in semiconductor (IC) fabrication and storage disk manufacturing. Discovery of this mechanism in both technologies suggests that this mechanism may be universal to many sputtering processes.

  16. IR emission from the target during plasma magnetron sputter deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cormier, P.-A. [GREMI, Université d' Orléans, 14 rue d' Issoudun, B.P. 6744, 45067 Orleans Cedex2 (France); Thomann, A.-L., E-mail: anne-lise.thomann@univ-orleans.fr [GREMI, Université d' Orléans, 14 rue d' Issoudun, B.P. 6744, 45067 Orleans Cedex2 (France); Dolique, V. [LMA, Université Claude Bernard Lyon I 7 Avenue Pierre de Coubertin, 69622 Villeurbanne Cedex (France); Balhamri, A. [ChIPS, Université de Mons, 20 Place du Parc, 7000 Mons (Belgium); Université Hassan 1, École Supérieure de Technologie, 218 Berrechid (Morocco); Dussart, R.; Semmar, N.; Lecas, T.; Brault, P. [GREMI, Université d' Orléans, 14 rue d' Issoudun, B.P. 6744, 45067 Orleans Cedex2 (France); Snyders, R. [ChIPS, Université de Mons, 20 Place du Parc, 7000 Mons (Belgium); Materia Nova R and D Center, Avenue Corpernic 1, Mons (Belgium); Konstantinidis, S. [Materia Nova R and D Center, Avenue Corpernic 1, Mons (Belgium)

    2013-10-31

    In this article, energy flux measurements at the substrate location are reported. In particular, the energy flux related to IR radiation emanating from the titanium (10 cm in diam.) target surface is quantified during magnetron sputter deposition processes. In order to modulate the plasma–target surface interaction and the radiative energy flux thereof, the working conditions were varied systematically. The experiments were performed in balanced and unbalanced magnetic field configurations with direct current (DC), pulsed DC and high power impulse magnetron sputtering (HiPIMS) discharges. The power delivered to the plasma was varied too, typically from 100 to 800 W. Our data show that the IR contribution to the total energy flux at the substrate increases with the supplied sputter power and as the discharge is driven in a pulse regime. In the case of HiPIMS discharge generated with a balanced magnetic field, the energy flux associated to the IR radiation produced by the target becomes comparable to the energy flux originating from collisional processes (interaction of plasma particles such as ions, electron, sputtered atoms etc. with the substrate). From IR contribution, it was possible to estimate the rise of the target surface temperature during the sputtering process. Typical values found for a titanium target are in the range 210 °C to 870 °C. - Highlights: • During magnetron sputtering process the heated target emits IR radiation. • We follow in real time the energy transferred to the deposited film by IR radiation. • IR radiation can be the main energy contribution in balanced pulsed processes. • IR radiation might affect the deposition process and the final film properties.

  17. Discharge current modes of high power impulse magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Zhongzhen Wu

    2015-09-01

    Full Text Available Based on the production and disappearance of ions and electrons in the high power impulse magnetron sputtering plasma near the target, the expression of the discharge current is derived. Depending on the slope, six possible modes are deduced for the discharge current and the feasibility of each mode is discussed. The discharge parameters and target properties are simplified into the discharge voltage, sputtering yield, and ionization energy which mainly affect the discharge plasma. The relationship between these factors and the discharge current modes is also investigated.

  18. Mechanical, tribological and corrosion performance of WBN composite films deposited by reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Lihua; Zhao, Hongjian; Xu, Junhua, E-mail: jhxu@just.edu.cn

    2014-10-01

    Highlights: • WBN composite films were deposited by reactive magnetron sputtering. • The WBN film which exhibited the highest hardness had best wear resistance at room and elevated temperature. • The corrosion resistance of the substrate which coated with W{sub 2}N films or WBN films was superior to the uncoated substrate. • The corrosion resistance of the substrate which coated with W{sub 2}N films was improved slightly by doping some boron content and the corrosion mechanism was discussed in the view of structure. - Abstract: WBN composite films with various boron contents ranging from 25.1 at.% to 46.5 at.% were deposited by a multi-target magnetron sputtering system. The microstructure, mechanical, tribological and corrosion behavior of films were studied using XRD, SEM, FTIR, HRTEM, nano-indentation, Ball-on-disc dry sliding wear tester, Bruker 3D Profiler and compared to W{sub 2}N. All the films exhibited face-centred cubic (fcc) structure W{sub 2}N; bcc α-W phases appeared as the B content was 25.1 at.% and amorphous BN appeared as the B content was 31.9 at.%. The hardness and compressive stress of WBN films first increased and then decreased with increasing the B content. As the B content was 38.1 at.%, they reached the maximum values of 36.1 GPa and 2.6 GPa, respectively. The best wear resistance at room and elevated temperature was found for the film which was shown to exhibit the highest hardness and compressive stress. The corrosion resistance of the substrate which coated with W{sub 2}N films or WBN films was superior to the uncoated substrate. The corrosion resistance of the substrate which coated with W{sub 2}N films was improved slightly by doping some boron content.

  19. Properties of a-C:H:Si thin films deposited by middle-frequency magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Jinlong, E-mail: golden_dragon@126.com [State Key Laboratory of Advanced Processing and Recycling of Nonferrous Metals, Lanzhou University of Technology, Lanzhou 730050 (China); School of Science, Lanzhou University of Technology, Lanzhou 730050 (China); Wang, Yubao; Du, Jinfang; Yang, Hua [State Key Laboratory of Advanced Processing and Recycling of Nonferrous Metals, Lanzhou University of Technology, Lanzhou 730050 (China); Hao, Junying, E-mail: jyhao@licp.cas.cn [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)

    2016-08-30

    Highlights: • The a-C:H:Si films were deposited by magnetron sputtering Si target in argon and methane gas mixture atmosphere. • The growth of a-C:H:Si films is classified into three modes with increasing of methane flow rate. • The a-C:H:Si films at moderate methane flow rate exhibit low stress, high hardness and superior tribological properties. - Abstract: The silicon doped hydrogenated amorphous carbon (a-C:H:Si) films were prepared on silicon substrates by middle-frequency magnetron sputtering silicon target in an argon and methane gas mixture atmosphere. The deposition rate, chemical composition, structure, surface properties, stress, hardness and tribological properties in the ambient air of the films were systemically investigated using X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM), atomic force microscopy (AFM), nanoindentation and tribological tester. The results show that doped silicon content in the films is controlled in the wide range from 39.7 at.% to 0.2 at.% by various methane gas flow rate, and methane flow rate affects not only the silicon content but also its chemical bonding structure in the films due to the transformation of sputtering modes. Meanwhile, the sp{sup 3} carbon component in the films linearly increases with increasing of methane flow rate. The film deposited at moderate methane flow rate of 40–60 sccm exhibits the very smooth surface (RMS roughness 0.4 nm), low stress (0.42 GPa), high hardness (21.1 GPa), as well as low friction coefficient (0.038) and wear rate (1.6 × 10{sup −7} mm{sup 3}/Nm). The superior tribological performance of the films could be attributed to the formation and integral covering of the transfer materials on the sliding surface and their high hardness.

  20. Structure dependent resistivity and dielectric characteristics of tantalum oxynitride thin films produced by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cristea, D., E-mail: daniel.cristea@unitbv.ro [Department of Materials Science, Transilvania University, 500036 Brasov (Romania); Crisan, A. [Department of Materials Science, Transilvania University, 500036 Brasov (Romania); Cretu, N. [Electrical Engineering and Applied Physics Department, Transilvania University, 500036 Brasov (Romania); Borges, J. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710 - 057 Braga (Portugal); Instituto Pedro Nunes, Laboratório de Ensaios, Desgaste e Materiais, Rua Pedro Nunes, 3030-199 Coimbra (Portugal); SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, 3030-788 Coimbra (Portugal); Lopes, C.; Cunha, L. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710 - 057 Braga (Portugal); Ion, V.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, “Photonic Processing of Advanced Materials” Group, PO Box MG-16, RO 77125 Magurele-Bucharest (Romania); Barradas, N.P. [Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 ao km 139,7, 2695-066 Bobadela LRS (Portugal); Alves, E. [Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 ao km 139,7, 2695-066 Bobadela LRS (Portugal); Apreutesei, M. [MATEIS Laboratory-INSA de Lyon, 21 Avenue Jean Capelle, 69621 Villeurbanne cedex (France); Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, Ecole Centrale de Lyon, Ecully F-69134 (France); Munteanu, D. [Department of Materials Science, Transilvania University, 500036 Brasov (Romania)

    2015-11-01

    Highlights: • Tantalum oxynitride thin films have been deposited by magnetron sputtering, in various configurations. • The rising of the reactive gases mixture flow has the consequence of a gradual increase in the non-metallic content in the films, which results in a 10 orders of magnitude resistivity domain. • The higher resistivity films exhibit dielectric constants up to 41 and quality factors up to 70. - Abstract: The main purpose of this work is to present and to interpret the change of electrical properties of Ta{sub x}N{sub y}O{sub z} thin films, produced by DC reactive magnetron sputtering. Some parameters were varied during deposition: the flow of the reactive gases mixture (N{sub 2} and O{sub 2}, with a constant concentration ratio of 17:3); the substrate voltage bias (grounded, −50 V or −100 V) and the substrate (glass, (1 0 0) Si or high speed steel). The obtained films exhibit significant differences. The variation of the deposition parameters induces variations of the composition, microstructure and morphology. These differences cause variation of the electrical resistivity essentially correlated with the composition and structural changes. The gradual decrease of the Ta concentration in the films induces amorphization and causes a raise of the resistivity. The dielectric characteristics of some of the high resistance Ta{sub x}N{sub y}O{sub z} films were obtained in the samples with a capacitor-like design (deposited onto high speed steel, with gold pads deposited on the dielectric Ta{sub x}N{sub y}O{sub z} films). Some of these films exhibited dielectric constant values higher than those reported for other tantalum based dielectric films.

  1. Plasma properties of RF magnetron sputtering system using Zn target

    Energy Technology Data Exchange (ETDEWEB)

    Nafarizal, N.; Andreas Albert, A. R.; Sharifah Amirah, A. S.; Salwa, O.; Riyaz Ahmad, M. A. [Microelectronic and Nanotechnology - Shamsuddin Research Centre (MiNT-SRC), Faculty of Electrical and Electronic Engineering, Universiti Tun Hussein Onn Malaysia 86400 Parit Raja, Batu Pahat, Johor (Malaysia)

    2012-06-29

    In the present work, we investigate the fundamental properties of magnetron sputtering plasma using Zn target and its deposited Zn thin film. The magnetron sputtering plasma was produced using radio frequency (RF) power supply and Argon (Ar) as ambient gas. A Langmuir probe was used to collect the current from the plasma and from the current intensity, we calculate the electron density and electron temperature. The properties of Zn sputtering plasma at various discharge conditions were studied. At the RF power ranging from 20 to 100 W and gas pressure 5 mTorr, we found that the electron temperature was almost unchanged between 2-2.5 eV. On the other hand, the electron temperature increased drastically from 6 Multiplication-Sign 10{sup 9} to 1 Multiplication-Sign 10{sup 10}cm{sup -3} when the discharge gas pressure increased from 5 to 10 mTorr. The electron microscope images show that the grain size of Zn thin film increase when the discharge power is increased. This may be due to the enhancement of plasma density and sputtered Zn density.

  2. Some New Views on the Principles of Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    ZHAO Jia-xue; FANG Kai-ming; TONG Hong-hui

    2004-01-01

    In this paper, some common phenomena in magnetron sputtering are freshly analyzed and discussed on the basis of the motion of electrons in non-uniform orthogonal electric and magnetic fields. There exist magnetic confinements in three spatial dimensions on moving charged particles (including electrons) in this kind of non-uniform field. They are the longitudinal cycloidal motion, the horizontal simple harmonic-like motion (with varying amplitudes), and the vertical repelling action. The horizontal magnetic confinement in a mirror-like magnetic field keeps glow discharge lane completely parallel to the corridor of magnetic force lines, therefore only an effectively closed magnet array structure can form a relatively uniform and closed discharge lane. The main reasons for electrons' releasing from magnetic confinement are the vertical magnetic repelling force as well as a more and more weak confinement action in outer range etc. The dominant reasons for a comparatively low increase of substrate's temperature are that the density of bombarding electrons near the substrate is relatively low and their spatial distribution is relatively uniform (compared with that near the target surface). The erosion lane with an inverted Gauss's distribution shape on a magnetron sputtered target is due to that,with sputtering, the distribution width of the critical density of electrons shrinks continuously but the sputtering effect in the centerline of the corridor is always the most powerful.

  3. Elementary surface processes during reactive magnetron sputtering of chromium

    Energy Technology Data Exchange (ETDEWEB)

    Monje, Sascha; Corbella, Carles, E-mail: carles.corbella@rub.de; Keudell, Achim von [Research Group Reactive Plasmas, Ruhr-University Bochum, Universitystr. 150, 44801 Bochum (Germany)

    2015-10-07

    The elementary surface processes occurring on chromium targets exposed to reactive plasmas have been mimicked in beam experiments by using quantified fluxes of Ar ions (400–800 eV) and oxygen atoms and molecules. For this, quartz crystal microbalances were previously coated with Cr thin films by means of high-power pulsed magnetron sputtering. The measured growth and etching rates were fitted by flux balance equations, which provided sputter yields of around 0.05 for the compound phase and a sticking coefficient of O{sub 2} of 0.38 on the bare Cr surface. Further fitted parameters were the oxygen implantation efficiency and the density of oxidation sites at the surface. The increase in site density with a factor 4 at early phases of reactive sputtering is identified as a relevant mechanism of Cr oxidation. This ion-enhanced oxygen uptake can be attributed to Cr surface roughening and knock-on implantation of oxygen atoms deeper into the target. This work, besides providing fundamental data to control oxidation state of Cr targets, shows that the extended Berg's model constitutes a robust set of rate equations suitable to describe reactive magnetron sputtering of metals.

  4. Degradation and Characterization of Resorbable Phosphate-Based Glass Thin-Film Coatings Applied by Radio-Frequency Magnetron Sputtering.

    Science.gov (United States)

    Stuart, Bryan W; Gimeno-Fabra, Miquel; Segal, Joel; Ahmed, Ifty; Grant, David M

    2015-12-16

    Quinternary phosphate-based glasses of up to 2.67 μm, deposited by radio-frequency magnetron sputtering, were degraded in distilled water and phosphate-buffered saline (PBS) to investigate their degradation characteristics. Magnetron-sputtered coatings have been structurally compared to their compositionally equivalent melt-quenched bulk glass counterparts. The coatings were found to have structurally variable surfaces to melt-quenched glass such that the respective bridging oxygen to nonbridging oxygen bonds were 34.2% to 65.8% versus 20.5% to 79.5%, forming metaphosphate (PO3)(-) (Q(2)) versus less soluble (P2O7)(4-) (Q(1)) and (PO4)(3-) (Q(0)), respectively. This factor led to highly soluble coatings, exhibiting a t(1/2) degradation dependence in the first 2 h in distilled water, followed by a more characteristic linear profile because the subsequent layers were less soluble. Degradation was observed to preferentially occur, forming voids characteristic of pitting corrosion, which was confirmed by the use of a focused ion beam. Coating degradation in PBS precipitated a (PO3)(-) metaphosphate, an X-ray amorphous layer, which remained adherent to the substrate and seemingly formed a protective diffusion barrier, which inhibited further coating degradation. The implications are that while compositionally similar, sputter-deposited coatings and melt-quenched glasses are structurally dissimilar, most notably, with regard to the surface layer. This factor has been attributed to surface etching of the as-deposited coating layer during deposition and variation in the thermal history between the processes of magnetron sputtering and melt quenching.

  5. Spatiotemporal synchronization of drift waves in a magnetron sputtering plasma

    CERN Document Server

    Martines, E; Cavazzana, R; Adámek, J; Antoni, V; Serianni, G; Spolaore, M; Vianello, N

    2014-01-01

    A feedforward scheme is applied for drift waves control in a magnetized magnetron sputtering plasma. A system of driven electrodes collecting electron current in a limited region of the explored plasma is used to interact with unstable drift waves. Drift waves actually appear as electrostatic modes characterized by discrete wavelengths of the order of few centimeters and frequencies of about 100 kHz. The effect of external quasi-periodic, both in time and space, travelling perturbations is studied. Particular emphasis is given to the role played by the phase relation between the natural and the imposed fluctuations. It is observed that it is possible by means of localized electrodes, collecting currents which are negligible with respect to those flowing in the plasma, to transfer energy to one single mode and to reduce that associated to the others. Due to the weakness of the external action, only partial control has been achieved.

  6. Magnetron-Sputtered YSZ and CGO Electrolytes for SOFC

    Science.gov (United States)

    Solovyev, A. A.; Shipilova, A. V.; Ionov, I. V.; Kovalchuk, A. N.; Rabotkin, S. V.; Oskirko, V. O.

    2016-08-01

    Reactive magnetron sputtering has been used for deposition of yttria-stabilized ZrO2 (YSZ) and gadolinium-doped CeO2 (CGO) layers on NiO-YSZ commercial anodes for solid oxide fuel cells. To increase the deposition rate and improve the quality of the sputtered thin oxide films, asymmetric bipolar pulse magnetron sputtering was applied. Three types of anode-supported cells, with single-layer YSZ or CGO and YSZ/CGO bilayer electrolyte, were prepared and investigated. Optimal thickness of oxide layers was determined experimentally. Based on the electrochemical characteristics of the cells, it is shown that, at lower operating temperatures of 650°C to 700°C, the cells with single-layer CGO electrolyte are most effective. The power density of these fuel cells exceeds that of the cell based on YSZ single-layer electrolyte at the same temperature. Power densities of 650 mW cm-2 and 500 mW cm-2 at 700°C were demonstrated by cells with single-layer YSZ and CGO electrolyte, respectively. Significantly enhanced maximum power density was achieved in a bilayer-electrolyte single cell, as compared with cells with a single electrolyte layer. Maximum power density of 1.25 W cm-2 at 800°C and 1 W cm-2 at 750°C under voltage of 0.7 V were achieved for the YSZ/CGO bilayer electrolyte cell with YSZ and CGO thickness of about 4 μm and 1.5 μm, respectively. This signifies that the YSZ thin film serves as a blocking layer to prevent electrical current leakage in the CGO layer, leading to the overall enhanced performance. This performance is comparable to the state of the art for cells based on YSZ/CGO bilayer electrolyte.

  7. Magnetron sputtered nanostructured cadmium oxide films for ammonia sensing

    Energy Technology Data Exchange (ETDEWEB)

    Dhivya, P. [Functional Nanomaterials and Devices Lab, Centre for Nanotechnology and Advanced Biomaterials and School of Electrical and Electronics Engineering, SASTRA University, Thanjavur-613 401 (India); Prasad, A.K. [Surface and Nanoscience Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam-603 102 (India); Sridharan, M., E-mail: m.sridharan@ece.sastra.edu [Functional Nanomaterials and Devices Lab, Centre for Nanotechnology and Advanced Biomaterials and School of Electrical and Electronics Engineering, SASTRA University, Thanjavur-613 401 (India)

    2014-06-01

    Nanostructured cadmium oxide (CdO) films were deposited on to glass substrates by reactive dc magnetron sputtering technique. The depositions were carried out for different deposition times in order to obtain films with varying thicknesses. The CdO films were polycrystalline in nature with cubic structure showing preferred orientation in (1 1 1) direction as observed by X-ray diffraction (XRD). Field-emission scanning electron microscope (FE-SEM) micrographs showed uniform distribution of grains of 30–35 nm size and change in morphology from spherical to elliptical structures upon increasing the film thickness. The optical band gap value of the CdO films decreased from 2.67 to 2.36 eV with increase in the thickness. CdO films were deposited on to interdigitated electrodes to be employed as ammonia (NH{sub 3}) gas sensor. The fabricated CdO sensor with thickness of 294 nm has a capacity to detect NH{sub 3} as low as 50 ppm at a relatively low operating temperature of 150 °C with quick response and recovery time. - Highlights: • Nanostructured CdO films were deposited on to glass substrates using magnetron sputtering. • Deposition time was varied in order to obtain films with different thicknesses. • The CdO films were polycrystalline in nature with preferred orientation along (1 1 1) direction. • The optical bandgap values of the films decreased on increasing the thickness of the films. • CdO films with different thickness such as 122, 204, 294 nm was capable to detect NH{sub 3} down to 50 ppm at operating temperature of 150 °C.

  8. Synthesis, transport, and retention of tin nanodroplets in a magnetron sputtering source combined with a capacitively-coupled plasma

    Science.gov (United States)

    Sasaki, K.; Takanari, K.

    2016-09-01

    The intention of this work was the development of a method for coating metal nanodroplets with thin films having high melting temperatures. To realize this process technology, we combined a magnetron sputtering plasma for synthesizing metal nanoparticles with a capacitively-coupled plasma (CCP) for retaining and heating synthesized nanoparticles. The magnetron sputtering source with a tin target was operated at a high pressure of 400 mTorr. The high pressure induced the condensation of tin atoms in the gas phase, resulting in the formation of tin nanoparticles. The nanoparticles were transported downward, and were trapped in the sheath electric field near the planar electrode for the CCP discharge. The formation, the transport, and the retention of nanoparticles were monitored by laser light scattering. Collected tin nanoparticles did not have agglomerated shapes, suggesting that tin nanoparticles were melted when they were stored in the CCP discharge. The surfaces of tin nanoparticles were oxidized. When we introduced methane before the collection, we observed core-shell nanoparticles without oxidization. Tin nanoparticles were coated with amorphous carbon films by plasma-enhanced chemical vapor deposition of methane.

  9. Photocatalytic property of titanium dioxide thin films deposited by radio frequency magnetron sputtering in argon and water vapour plasma

    Energy Technology Data Exchange (ETDEWEB)

    Sirghi, L., E-mail: lsirghi@uaic.ro [Department of Physics, Alexandru Ioan Cuza University, Blvd. Carol I, 11, Iasi, 700506 (Romania); Hatanaka, Y. [Research Institute of Electronics, Shizuoka University, 3-5-1, Johoku Naka-ku Hamamatsu, 432-8011 (Japan); Sakaguchi, K. [Faculty of Engineering, Aichi University of Technology, 50-2 Manori, Nishihazama, Gamagori, 443-0047 Aichi (Japan)

    2015-10-15

    Highlights: • TiOx thin films were deposited by radio frequency magnetron sputtering in Ar and Ar/H{sub 2}O plasma. • The deposited films contain OH groups in their bulk structure irrespective of the water content of the working gas. • The structure and photocatalytic activity of the deposited films were studied. - Abstract: The present work is investigating the photocatalytic activity of TiO{sub 2} thin films deposited by radiofrequency magnetron sputtering of a pure TiO{sub 2} target in Ar and Ar/H{sub 2}O (pressure ratio 40/3) plasmas. Optical absorption, structure, surface morphology and chemical structure of the deposited films were comparatively studied. The films were amorphous and included a large amount of hydroxyl groups (about 5% of oxygen atoms were bounded to hydrogen) irrespective of the intentional content of water in the deposition chamber. Incorporation of hydroxyl groups in the film deposited in pure Ar plasma is explained as contamination of the working gas with water molecules desorbed by plasma from the deposition chamber walls. However, intentional input of water vapour into the discharge chamber decreased the deposition speed and roughness of the deposited films. The good photocatalytic activity of the deposited films could be attributed hydroxyl groups in their structures.

  10. Rapidly switched wettability of titania films deposited by dc magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Shirolkar, Mandar; Abyaneh, Majid Kazemian; Singh, Akanksha; Kulkarni, Sulabha [DST Unit on Nanoscience, Department of Physics, University of Pune (India); Tomer, Anju; Choudhary, Ram; Sathe, Vasant; Phase, Deodatta [UGC-DAE Consortium for Scientific Research Indore Centre, University Campus, Khandwa Road, Indore (India)], E-mail: skk@physics.unipune.ernet.in

    2008-08-07

    Rapid switching (5-15 minutes) in the wettability of titania (TiO{sub 2}) thin films in the anatase phase has been observed after UV irradiation. The film surface becomes superhydrophilic when exposed to UV radiation. The relationship between wettability, thickness and crystallinity of TiO{sub 2} films has been investigated. Amorphous and anatase TiO{sub 2} thin films have been deposited by varying the argon to oxygen gas ratio, using the reactive dc magnetron sputtering technique. It was found that the gas ratio primarily affects thickness, crystallinity, morphology and wettability of the films. The highest contact angle that has been reported so far, namely, 170 deg. -176 deg., has been observed for film thickness varying from 112-500 nm in the case of pristine anatase TiO{sub 2} films. On the other hand, amorphous films show a variation in the contact angle from 120 deg. to 140 deg. as the thickness varied from 70 to 145 nm. The deposition is extremely robust and has an ultralow hysteresis in the contact angle. The films exhibit a morphology similar to the lotus leaf and the water hyacinth.

  11. Bonding structure and morphology of chromium oxide films grown by pulsed-DC reactive magnetron sputter deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gago, R., E-mail: rgago@icmm.csic.es [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, E-28049 Madrid (Spain); Vinnichenko, M. [Fraunhofer-Institut für Keramische Technologien und Systeme IKTS, D-01277 Dresden (Germany); Hübner, R. [Helmholtz-Zentrum Dresden – Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden (Germany); Redondo-Cubero, A. [Departamento de Física Aplicada and Centro de Microanálisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain)

    2016-07-05

    Chromium oxide (CrO{sub x}) thin films were grown by pulsed-DC reactive magnetron sputter deposition in an Ar/O{sub 2} discharge as a function of the O{sub 2} fraction in the gas mixture (ƒ) and for substrate temperatures, T{sub s}, up to 450 °C. The samples were analysed by Rutherford backscattering spectrometry (RBS), spectroscopic ellipsometry (SE), atomic force microscopy (AFM), scanning (SEM) and transmission (TEM) electron microscopy, X-ray diffraction (XRD), and X-ray absorption near-edge structure (XANES). On unheated substrates, by increasing ƒ the growth rate is higher and the O/Cr ratio (x) rises from ∼2 up to ∼2.5. Inversely, by increasing T{sub s} the atomic incorporation rate drops and x falls to ∼1.8. XRD shows that samples grown on unheated substrates are amorphous and that nanocrystalline Cr{sub 2}O{sub 3} (x = 1.5) is formed by increasing T{sub s}. In amorphous CrO{sub x}, XANES reveals the presence of multiple Cr environments that indicate the growth of mixed-valence oxides, with progressive promotion of hexavalent states with ƒ. XANES data also confirms the formation of single-phase nanocrystalline Cr{sub 2}O{sub 3} at elevated T{sub s}. These structural changes also reflect on the optical and morphological properties of the films. - Highlights: • XANES of CrO{sub x} thin films grown by pulsed-DC reactive magnetron sputtering. • Identification of mixed-valence amorphous CrO{sub x} oxides on unheated substrates. • Promotion of amorphous chromic acid (Cr{sup VI}) by increasing O{sub 2} partial pressure. • Production of single-phase Cr{sub 2}O{sub 3} films by increasing substrate temperature. • Correlation of bonding structure with morphological and optical properties.

  12. Vibrational spectroscopy characterization of magnetron sputtered silicon oxide and silicon oxynitride films

    Energy Technology Data Exchange (ETDEWEB)

    Godinho, V., E-mail: godinho@icmse.csic.es [Instituto de Ciencia de Materiales de Sevilla-CSIC/US, Avda. Americo Vespucio no 49, 41092 Seville (Spain); Universite Libre de Bruxelles, Avenue F.D. Roosevelt 50, B 1050 Bruxelles (Belgium); Denisov, V.N.; Mavrin, B.N.; Novikova, N.N.; Vinogradov, E.A.; Yakovlev, V.A. [Institute for Spectroscopy - Russian Academy of Sciences, 142190, Troitsk, Moscow reg. (Russian Federation); Fernandez-Ramos, C. [Instituto de Ciencia de Materiales de Sevilla-CSIC/US, Avda. Americo Vespucio no 49, 41092 Seville (Spain); Institute for Prospective and Technological Studies-JRC European Commission, C/Inca Garcilaso s/n, 41092 Seville (Spain); Jimenez de Haro, M.C.; Fernandez, A. [Instituto de Ciencia de Materiales de Sevilla-CSIC/US, Avda. Americo Vespucio no 49, 41092 Seville (Spain)

    2009-10-15

    Vibrational (infrared and Raman) spectroscopy has been used to characterize SiO{sub x}N{sub y} and SiO{sub x} films prepared by magnetron sputtering on steel and silicon substrates. Interference bands in the infrared reflectivity measurements provided the film thickness and the dielectric function of the films. Vibrational modes bands were obtained both from infrared and Raman spectra providing useful information on the bonding structure and the microstructure (formation of nano-voids in some coatings) for these amorphous (or nanocrystalline) coatings. X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) analysis have also been carried out to determine the composition and texture of the films, and to correlate these data with the vibrational spectroscopy studies. The angular dependence of the reflectivity spectra provides the dispersion of vibrational and interference polaritons modes, what allows to separate these two types of bands especially in the frequency regions where overlaps/resonances occurred. Finally the attenuated total reflection Fourier transform infrared measurements have been also carried out demonstrating the feasibility and high sensitivity of the technique. Comparison of the spectra of the SiO{sub x}N{sub y} films prepared in various conditions demonstrates how films can be prepared from pure silicon oxide to silicon oxynitride with reduced oxygen content.

  13. Abrasion resistant low friction and ultra-hard magnetron sputtered AlMgB14 coatings

    Science.gov (United States)

    Grishin, A. M.

    2016-04-01

    Hard aluminum magnesium boride films were fabricated by RF magnetron sputtering from a single stoichiometric AlMgB14 ceramic target. X-ray amorphous AlMgB14 films are very smooth. Their roughness does not exceed the roughness of Si wafer and Corning glass used as the substrates. Dispersion of refractive index and extinction coefficient were determined within 300 to 2500 nm range for the film deposited onto Corning glass. Stoichiometric in-depth compositionally homogeneous 2 μm thick films on the Si(100) wafer possess the peak values of nanohardness 88 GPa and Young’s modulus 517 GPa at the penetration depth of 26 nm and, respectively, 35 GPa and 275 GPa at 200 nm depth. Friction coefficient was found to be 0.06. The coating scratch adhesion strength of 14 N was obtained as the first chipping of the coating whereas its spallation failure happened at 21 N. These critical loads and the work of adhesion, estimated as high as 18.4 J m-2, surpass characteristics of diamond like carbon films deposited onto tungsten carbide-cobalt (WC-Co) substrates.

  14. Growth of IGZO thin films and fabrication of transparent thin film transistor by RF magnetron sputtering

    Science.gov (United States)

    Sanal, K. C.; Majeesh, M.; Jayaraj, M. K.

    2013-09-01

    n-Type transparent conducting indiuim galium zinc oxide (IGZO) films were successfully grown on glass sub- strates at room temperature by rf magnetron sputtering . Structural, optical, morphological and electrical properties of IGZO films deposited at different rf power were investigated.Composition of the film was confirmed by EDAX measurement which shows that percentage of Zn increased with the rf power. Structural studies by X-ray diffraction showed that as deposited IGZO films were amorphous. The roughness of the film was increased with increase in rf power and smooth film of average roughness 0.75nm was obtained at 40W rf power. The average transmission in the visible range was greater than 80% and the transmission in the higher wavelength re- gion decreased with increase in RF power. Refractive index of IGZO film calculated by Swanepoel technique was 1.92. The carrier concentration in IGZO films can be controlled by controlling rf which can vary Zn/(Ga+In+Zn) ratio. The bottom gate structured transparent TFTs fabricated using n-type IGZO active layers operated in enhancement mode with field effect mobility 2.5 cm2/Vs and threshold voltage 20V.

  15. Magnetron sputtering synthesis of large area well-ordered boron nanowire arrays

    Institute of Scientific and Technical Information of China (English)

    CAO; Limin; ZHANG; Ze; WANG; Wenkui

    2004-01-01

    One-dimensionally nanostructured materials, such as nanowires and nanotubes, are the smallest dimensional structures for efficient transport of electrons and excitons, and are therefore critical building blocks for nanoscale electronic and mechanical devices. In this paper, boron nanowires with uniform diameters from 20 to 80nm were synthesized by radio-frequency magnetron sputtering of pure boron powder and B2O3 powder mixtures in argon atmosphere. The boron nanowires produced stand vertically on the substrate surface to form well-ordered arrays over large areas with selforganized arrangements without involvement of any template and patterned catalyst. The high-density boron nanowires are parallel to each other and well distributed, forming highly ordered and uniform arrays. A more interesting and unique feature of the boron nanowires is that most of their tips are flat rather than hemispherical in morphologies.Detailed studies on its structure and composition indicate that boron nanowires are amorphous. Boron nanowire appears as a new member in the family of one-dimensional nanostructures. Considering the unique properties of boron-rich solids and other nanostructures, it is reasonable to expect that the boron nanowires will display some exceptional and interesting properties. A vapor-cluster-solid (VCS) mechanism was proposed to explain the growth of boron nanowires based on our experimental observations.

  16. Structure and electronic properties of SiC thin-films deposited by RF magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    ZHOU Ji-cheng; ZHENG Xu-qiang

    2007-01-01

    SiC thin-films were prepared by RF-magnetron sputtering technique(RMS) with the target of single crystalline SiC and then annealed. The surface morphology of thin-films was characterized by AFM. The result shows that the surface of the thin-films is smooth and compact; XRD analysis reveals that the thin-films are amorphous. The thickness, square-resistance and curves of resistance-temperature were measured. The results show that the curves of lnR versus 1/kT both before and after annealing satisfy the expression of lnR∝△W/kT, where △W is electron excitation energy in the range of 0.014 2-0.018 5 eV, and it has a trend of increasing when the temperature is increased. After synthetical analysis we get the conclusion that the electronic mechanism of the thin-films is short distance transition between the localized states in the temperature range of 25-250 ℃. The resistivity is in the range of 2.4×10-3-4.4×10-3 Ω·cm and it has the same trend as electron excitation energy when annealing temperature is increased, which further confirms the electronic mechanism of thin-films and the trend of electron excitation energy versus annealing temperature.

  17. Optical properties of hexagonal boron nitride thin films deposited by radio frequency bias magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    Deng Jin-Xiang; Zhang Xiao-Kang; Yao Qian; Wang Xu-Yang; Chen Guang-Hua; He De-Yan

    2009-01-01

    The optical properties of hexagonal boron nitride (h-BN) thin films were studied in this paper. The films were characterized by Fourier transform infrared spectroscopy,UV-visible transmittance and reflection spectra,h-BN thin films with a wide optical band gap Eg (5.86 eV for the as-deposited film and 5.97 eV for the annealed film) approaching h-BN single crystal were successfully prepared by radio frequency (RF) bias magnetron sputtering and post-deposition annealing at 970 K. The optical absorption behaviour of h-BN films accords with the typical optical absorption characteristics of amorphous materials when fitting is made by the Urbach tail model. The annealed film shows satisfactory structure stability. However,high temperature still has a significant effect on the optical absorption properties,refractive index n,and optical conductivity σ of h-BN thin films. The blue-shift of the optical absorption edge and the increase of Eg probably result from stress relaxation in the film under high temperatures. In addition,it is found that the refractive index clearly exhibits different trends in the visible and ultraviolet regions. Previous calculational results of optical conductivity of h-BN films are confirmed in our experimental results.

  18. Initial growth and texture formation during reactive magnetron sputtering of TiN on Si(111)

    CERN Document Server

    Li, T Q; Tsuji, Y; Ohsawa, T; Komiyama, H

    2002-01-01

    The initial growth and texture formation mechanism of titanium nitride (TiN) films were investigated by depositing TiN films on (111) silicon substrates by using reactive magnetron sputtering of a Ti metallic target under a N sub 2 /Ar atmosphere, and then analyzing the films in detail by using transmission electron microscopy (TEM) and x-ray diffraction (XRD). Two power sources for the sputtering, dc and rf, were compared. At the initial growth stage, a continuous amorphous film containing randomly oriented nuclei was observed when the film thickness was about 3 nm. The nuclei grew and formed a polycrystalline layer when the film thickness was about 6 nm. As the film grew further, its orientation changed depending on the deposition conditions. For dc sputtering, the appearance of (111) or (200)-preferred orientations depended on the N sub 2 partial pressure, and the intensity of the preferred orientation increased with increasing film thickness. For rf sputtering, however, when the film thickness was small (...

  19. Structural and mechanical properties of diamond-like carbon films deposited by direct current magnetron sputtering

    Science.gov (United States)

    Broitman, E.; Hellgren, N.; Czigány, Zs.; Twesten, R. D.; Luning, J.; Petrov, I.; Hultman, L.; Holloway, B. C.

    2003-07-01

    The microstructure, morphology, and mechanical properties of diamond-like carbon (DLC) films deposited by direct current magnetron sputtering were investigated for microelectromechanical systems applications. Film properties were found to vary markedly with the ion energy (Eion) and ion-to-carbon flux ratio (Jion/JC). Cross-sectional high-resolution transmission electron microscopy revealed an amorphous microstructure. However, the presence of nanometer-sized domains at Eion~85 eV was detected. Film stresses, σ, which were compressive in all cases, ranged from 0.5 to 3.5 GPa and depended on the flux ratio as well as ion energy. The hardness (H), Young's moduli (ɛ), and elastic recovery (R) increased with Eion to maximum values of H=27 GPa, ɛ=250 GPa, and R=68% at Eion=85 eV and Jion/JC=4.4. However, near edge x-ray absorption fine structure and electron energy-loss spectrum analysis showed that the sp2/sp3 content of the films does not change with Eion or Jion/JC. The measured change in mechanical properties without a corresponding change in sp2/sp3 ratio is not consistent with any previously published models. We suggest that, in the ranges 5 eV <=Eion<=85 eV and 1.1 <=Jion/JC<=6.8, the presence of defective graphite formed by subplanted C and Ar atoms has the dominant influence on the mechanical properties of DLC films.

  20. Reactive magnetron sputtering of CN{sub x} thin films at different substrate bias

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, W.T.; Broitman, E.; Hellgren, N.; Xing, K.Z.; Ivanov, I.; Sjoestroem, H.; Hultman, L.; Sundgren, J.-E. [Linkoeping Univ. (Sweden). Dept. of Physics

    1997-10-31

    The chemical binding states of C and N atoms, and optical properties of carbon nitride (CN{sub x}) thin films deposited by unbalanced magnetron sputtering, have been investigated as a function of the negative substrate bias (V{sub s}). The film deposition rate increased slightly with increasing V{sub s}, having a weak maximum at floating potential (--50 V), and decreased sharply to zero for V{sub s}>150 V, while N/C ratios did not exhibit any significant variation. Raman spectroscopy was used to reveal that the structure of the film is predominantly amorphous. Fourier transform infra-red spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS) analyses showed that N atoms in the films were bound to C atoms through sp{sup 2} and sp{sup 3} configurations. Triple C-N bonds were also detected by FTIR. The ratio of sp{sup 3} to sp{sup 2} bonds increased with increasing V{sub s}. The maximum sp{sup 3} concentration in CN{sub x} films was estimated to be --20%. The optical band gap of CN{sub x} films was also found to increase with an increase in V{sub s}. (orig.) 19 refs.

  1. Structural investigation of ZnO:Al films deposited on the Si substrates by radio frequency magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Y.Y. [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan, ROC (China); Yang, J.R., E-mail: jryang@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan, ROC (China); Cheng, S.L. [Department of Chemical and Materials Science Engineering, National Central University, Jong-li 32001, Taiwan, ROC (China); Shiojiri, M. [Kyoto Institute of Technology, Kyoto 606-8585 (Japan)

    2013-10-31

    ZnO:Al films 400 nm thick were prepared on (100) Si substrates by magnetron sputtering. Energy dispersive X-ray spectroscopy and transmission electron microscopy (TEM) revealed that in the initial stage of the deposition, an amorphous silicon oxide layer about 4 nm thick formed from damage to the Si substrate due to sputtered particle bombardment and the incorporation of Si atoms with oxygen. Subsequently, a crystalline Si (Zn) layer about 30 nm thick grew on the silicon oxide layer by co-deposition of Si atoms sputtered away from the substrate with Zn atoms from the target. Finally, a ZnO:Al film with columnar grains was deposited on the Si (Zn) layer. The sputtered particle bombardment greatly influenced the structure of the object films. The (0001) lattice fringes of the ZnO:Al film were observed in high-resolution TEM images, and the forbidden 0001 reflection spots in electron diffraction patterns were attributed to double diffraction. Therefore, the appearance of the forbidden reflection did not imply any ordering of Al atoms and/or O vacancies in the ZnO:Al film. - Highlights: • ZnO:Al films were deposited on (100) Si substrate using magnetron sputtering. • An amorphous silicon oxide layer with a thickness of 4 nm was formed on Si substrate. • Crystalline Si (Zn) layer about 30 nm thick grew on amorphous silicon oxide layer. • ZnO:Al film comprising columnar grains was deposited on the Si(Zn) layer. • Lattice image of the ZnO:Al film has been interpreted.

  2. Reactive high power impulse magnetron sputtering: combining simulation and experiment

    Science.gov (United States)

    Kozak, Tomas; Vlcek, Jaroslav

    2016-09-01

    Reactive high-power impulse magnetron sputtering (HiPIMS) has recently been used for preparation of various oxide films with high application potential, such as TiO2, ZrO2, Ta2O5, HfO2, VO2. Using our patented method of pulsed reactive gas flow control with an optimized reactive gas inlet, we achieved significantly higher deposition rates compared to typical continuous dc magnetron depositions. We have developed a time-dependent model of the reactive HiPIMS. The model includes a depth-resolved description of the sputtered target (featuring sputtering, implantation and knock-on implantation processes) and a parametric description of the discharge plasma (dissociation of reactive gas, ionization and return of sputtered atoms and gas rarefaction). The model uses a combination of experimental and simulation data as input. We have calculated the composition of the target and substrate for several deposition conditions. The simulations predict a reduced compound coverage of the target in HiPIMS compared to the continuous dc sputtering regime which explains the increased deposition rate. The simulations show that an increased dissociation of oxygen in a HiPIMS discharge is beneficial to achieve stoichiometric films on the substrate at high deposition rates.

  3. Synthesis of Alumina Thin Films Using Reactive Magnetron Sputtering Method

    Science.gov (United States)

    Angarita, G.; Palacio, C.; Trujillo, M.; Arroyave, M.

    2017-06-01

    Alumina (Al2O3) thin films were deposited on Si (100) by Magnetron Sputtering in reactive conditions between an aluminium target and oxygen 99.99% pure. The plasma was formed employing Argon with an R.F power of 100 W, the dwelling time was 3 hours. 4 samples were produced with temperatures between 350 and 400 ºC in the substrate by using an oxygen flow of 2 and 8 sccm, the remaining parameters of the process were fixed. The coatings and substrates were characterized using Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), X-ray diffraction (XRD) and Energy Dispersive Spectroscopy (EDS) in order to compare their properties before and after deposition. The films thicknesses were between 47 and 70 nm. The results show that at high oxygen flow the alumina structure prevails in the coatings while at lower oxygen flow only aluminum is deposited in the coatings. It was shown that the temperature increases grain size and roughness while decreasing the thicknesses of the coatings.

  4. Textured ZnO thin films by RF magnetron sputtering

    CERN Document Server

    Ginting, M; Kang, K H; Kim, S K; Yoon, K H; Park, I J; Song, J S

    1999-01-01

    Textured thin films ZnO has been successfully grown by rf magnetron sputtering method using a special technique of introducing a small amount of water and methanol on the deposition chamber. The grain size of the textured surface is highly dependent on the argon pressure during the deposition. The pressure in this experiment was varied from 50 mTorr down to 5 mTorr and the highest grain size of the film is obtained at 5 mTorr. The total transmittance of the films are more than 85% in the wavelength of 400 to 800 nm, and haze ratio of about 14% is obtained at 400 nm wavelength. Beside the textured surface, these films also have very low resistivity, which is lower than 1.4x10 sup - sup 3 OMEGA centre dot cm. X-ray analysis shows that the films with textured surface have four diffraction peaks on the direction of (110), (002), (101) and (112), while the non-textured films have only (110) and (002) peaks. Due to the excellent characteristics of this film, it will make the film very good TCO alternatives for the ...

  5. Discharge Physics of High Power Impulse Magnetron Sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Anders, Andre

    2010-10-13

    High power impulse magnetron sputtering (HIPIMS) is pulsed sputtering where the peak power exceeds the time-averaged power by typically two orders of magnitude. The peak power density, averaged over the target area, can reach or exceed 107 W/m2, leading to plasma conditions that make ionization of the sputtered atoms very likely. A brief review of HIPIMS operation is given in a tutorial manner, illustrated by some original data related to the self-sputtering of niobium in argon and krypton. Emphasis is put on the current-voltage-time relationships near the threshold of self-sputtering runaway. The great variety of current pulse shapes delivers clues on the very strong gas rarefaction, self-sputtering runaway conditions, and the stopping of runaway due to the evolution of atom ionization and ion return probabilities as the gas plasma is replaced by metal plasma. The discussions are completed by considering instabilities and the special case of ?gasless? self-sputtering.

  6. Magnetron-sputtered coatings for titanium aluminide alloys

    Energy Technology Data Exchange (ETDEWEB)

    Godlewska, E.; Mitoraj, M.; Mania, R. [AGH-UST, Cracow (Poland). Faculty of Materials Science and Ceramics; Zimowski, S.; Kot, M. [AGH-UST, Cracow (Poland). Faculty of Mechanical Engineering and Robotics

    2010-07-01

    Third-generation titanium aluminide alloys fulfil major requirements as lightweight materials for structural applications at moderate temperatures and loads. They are known for attractive combination of physical, chemical and mechanical properties, e.g. low density, good oxidation resistance and strength. Still a lot of work is being done to develop protection systems enabling their use at temperatures exceeding current limit of about 600-650 C. The protection systems under investigation include thick thermal barriers similar to the state-of-the-art coatings for superalloys but also thin layers functioning as diffusion barriers for gases to prevent embrittlement. The paper presents investigations on surface modification of a ({alpha}+{gamma}{sub 2}) Ti-46-8Nb alloy by means of magnetron sputtering of two-component targets: Cr-0.5Si, Cr-5Si, CrSi{sub 2} and Ti-10Si. Targets were obtained from elemental powders by hot pressing. The properties of thus produced surface layers were evaluated on the basis of nanoindentation and scratch tests in the as-received condition and after exposure to air at elevated temperature. Surfaces and cross-sections of the oxidized specimens were examined by SEM, EDS and XRD/GID. (orig.)

  7. Optical Properties of Magnetron sputtered Nickel Thin Films

    Science.gov (United States)

    Twagirayezu, Fidele; Geerts, Wilhelmus J.; Cui, Yubo

    2015-03-01

    The study of optical properties of Nickel (Ni) is important, given the pivotal role it plays in the semiconductor and nano-electronics technology. Ni films were made by DC and RF magnetron sputtering in an ATC Orion sputtering system of AJA on various substrates. The optical properties were studied ex situ by variable angle spectroscopic (220-1000 nm) ellipsometry at room temperature. The data were modeled and analyzed using the Woollam CompleteEase Software fitting ellipsometric and transmission data. Films sputtered at low pressure have optical properties similar to that of Palik. Films sputtered at higher pressure however have a lower refraction index and extinction coefficient. It is expected from our results that the density of the sputtered films can be determined from the ellipsometric quantities. Our experiments also revealed that Ni is susceptible to a slow oxidation changing its optical properties over the course of several weeks. The optical properties of the native oxide differ from those of reactive sputtered NiO similar as found by. Furthermore the oxidation process of our samples is characterized by at least two different time constants.

  8. Preparation of iron cobaltite thin films by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Le Trong, H. [Université de Toulouse, UPS, INPT, Institut Carnot CIRIMAT, 118, Route de Narbonne, F-31062 Toulouse cedex 9 (France); CNRS, Institut Carnot Cirimat, F-31062 Toulouse (France); Ho Chi Minh City University of Science, Vietnam National University Ho Chi Minh City, 227 Nguyen Van Cu Q 5, 750000 Ho Chi Minh City (Viet Nam); Bui, T.M.A. [Université de Toulouse, UPS, INPT, Institut Carnot CIRIMAT, 118, Route de Narbonne, F-31062 Toulouse cedex 9 (France); CNRS, Institut Carnot Cirimat, F-31062 Toulouse (France); University of Transport and Communications, Lang Thuong, Dong Da, Hanoi (Viet Nam); Presmanes, L., E-mail: presmane@chimie.ups-tlse.fr [Université de Toulouse, UPS, INPT, Institut Carnot CIRIMAT, 118, Route de Narbonne, F-31062 Toulouse cedex 9 (France); CNRS, Institut Carnot Cirimat, F-31062 Toulouse (France); Barnabé, A.; Pasquet, I.; Bonningue, C.; Tailhades, Ph. [Université de Toulouse, UPS, INPT, Institut Carnot CIRIMAT, 118, Route de Narbonne, F-31062 Toulouse cedex 9 (France); CNRS, Institut Carnot Cirimat, F-31062 Toulouse (France)

    2015-08-31

    Iron cobaltite thin films with spinel structure have been elaborated by radio-frequency (RF) magnetron sputtering from a Co{sub 1.75}Fe{sub 1.25}O{sub 4} target. Influence of argon pressure on structure, microstructure and physical properties of films has been examined. Iron–cobalt oxide thin films essentially consist of one spinel phase when deposited at low pressure (0.5 and 1.0 Pa). At high pressure (2.0 Pa), the global stoichiometry of the film is changed which results in the precipitation of a mixed monoxide of cobalt and iron beside the spinel phase. This in-situ reduction due to an oxygen loss occurring mainly at high deposition pressure has been revealed by X-ray diffraction and Raman spectroscopy. Microstructural evolution of thin film with argon pressure has been shown by microscopic observations (AFM and SEM). The evolution of magnetic and electrical properties, versus argon pressure, has been also studied by SQUID and 4 point probe measurements. - Highlights: • Co{sub 1.75}Fe{sub 1.25}O{sub 4} phase is obtained at room temperature without any annealing. • This phase is a ferrimagnetic semiconductor with a coercive field of 32 kOe at 5 K. • Oxygen content of the thin film is related to the argon pressure during sputtering. • Monoxide phase grows into the film at high argon pressure. • Magnetic coupling effect reveals nanoscale impurities at low argon pressure.

  9. Application of 60 mmphi superconducting bulk magnet to magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Matsuda, T.; Kashimoto, S.; Imai, A.; Yanagi, Y.; Itoh, Y.; Ikuta, H.; Mizutani, U.; Sakurai, K.; Hazama, H

    2003-10-15

    We constructed the planar magnetron sputtering apparatus using a c-axis oriented single-domain Sm123 bulk superconductor with 60 mm in diameter as a very powerful magnet in place of an ordinary Nd-Fe-B magnet. A high magnetic field of 4.2 T at the surface of the superconductor coupled with a high target voltage of maximum 6 kV enabled us to discharge even at pressure of 1 x 10{sup -3} Pa. A target-to-substrate distance of 300 mm was successfully employed under low pressures of 10{sup -2}-10{sup -3} Pa to make the deposition of almost contamination-free films feasible. The simulation software (JMAG) was used to optimize the magnetic circuit configurations. The simulations could reproduce well the distribution of the magnetic field above the target measured by a three-axial Hall sensor. The discharging characteristics of Cu, Ni and Fe targets in the pressure range over 10{sup -1}-10{sup -3} Pa were studied under different target voltages. The deposition rates of 0.063 nm/s (or 38 Angst/min) and 0.013 nm/s (or 8 Angst/min) were achieved for Cu and Fe targets with 3 mm in thickness, respectively, under the Ar pressure of 6.6 x 10{sup -2} Pa (or 4.9 x 10{sup -4} Torr)

  10. Superconducting niobium nitride films deposited by unbalanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Olaya, J.J. [Departamento de Ingenieria Mecanica y Mecatronica, Universidad Nacional de Colombia, Ciudad Universitaria, Carrera 30 Numero 45-03, Bogota (Colombia); Huerta, L. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico); Rodil, S.E. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico)], E-mail: ser42@iim.unam.mx; Escamilla, R. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico)

    2008-10-01

    Niobium nitride (NbN) thin films were deposited under different configurations of the magnetic field using a magnetron sputtering system. The magnetic field configuration varied from balanced to unbalanced leading to different growth conditions and film properties. The aim of the paper was to identify correlations between deposition conditions, film properties and the electrical properties, specially the superconductive critical temperature (T{sub C}). The results suggested that there is a critical deposition condition, having an optimum ion-atom arrival ratio that promotes a well ordered and textured nanocrystalline structure (cubic phase) with the minimum residual stress and only under this condition a high critical temperature (16K) was obtained. Lower T{sub C} values around 12K were obtained for the NbN samples having a lower degree of structural perfection and texture, and a larger fraction of intergranular voids. On the other hand, analysis of valence-band spectra showed that the contribution of the Nb 4d states remained essentially constant while the higher T{sub C} was correlated to a higher contribution of the N 2p states.

  11. Comparison of the structural properties and residual stress of AlN films deposited by dc magnetron sputtering and high power impulse magnetron sputtering at different working pressures

    Energy Technology Data Exchange (ETDEWEB)

    Ait Aissa, K.; Achour, A., E-mail: a_aminph@yahoo.fr; Camus, J.; Le Brizoual, L.; Jouan, P.-Y.; Djouadi, M.-A.

    2014-01-01

    Aluminium nitride (AlN) films were deposited by dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) on (100) oriented silicon (Si) substrates, in Ar–N{sub 2} gas mixture, at different working pressures. The films were characterized using X-ray diffraction (XRD), profilometer and transmission electron microscopy (TEM). The effect of the sputtering pressure on the structure, the residual stress and the deposition rate of AlN films deposited by the two processes (dcMS and HiPIMS) was investigated. It was found that the deposition rate is always lower in HiPIMS compared to dcMS. The AlN films are textured along (002) direction in both cases of dcMS and HiPIMS as it is indicated by XRD measurements, with residual stresses which are more important in the case of films deposited by HiMIPS. These residual stresses decrease with the sputtering pressure increase, especially in the case of the films deposited by HiPIMS. TEM analyses have shown a local epitaxial growth of AlN on the Si substrate which would favour thermal evacuation improvement of AlN as thermal interface material. - Highlights: • Highly c-axis oriented AlN films were obtained. • dc magnetron sputtering and high power impulse magnetron sputtering (HiMIPS) were used. • Abrupt interface between AlN and silicon substrate was obtained by HiPIMS.

  12. The effect of deposition RF power on the SiC passivation layer synthesized by an RF magnetron sputtering method

    Science.gov (United States)

    Keun Seo, Jae; Ko, Ki-han; Seok Choi, Won; Park, Mungi; Hwan Lee, Jong; Yi, Jun-Sin

    2011-07-01

    In this paper, we investigated the amorphous silicon carbide (a-SiC) film as an alternative material to silicon nitride (SiN) and silicon oxide (SiO 2) for the passivation layer of solar cells. The a-SiC films were deposited on the p-type silicon (1 0 0) and glass substrates by a RF magnetron sputtering method using a-SiC (99%) target. We investigated the properties according to the deposition RF power (150, 200, 250 and 300 W). The optical properties were investigated by UV-visible spectroscopy and an ellipsometer. The performance of SiC passivation layer was investigated by carrier lifetime measurement. We could obtain the lowest refractive index of 3.22 and the carrier lifetime was the highest, 7 μs at the deposition RF power of 150 W.

  13. OPTICAL CHARACTERIZATION OF TiO2 THIN FILM ON SILICON SUBSTRATE DEPOSITED BY DC REACTIVE MAGNETRON SPUTTERING

    Institute of Scientific and Technical Information of China (English)

    H.Q. Wang; H. Shen; D.C. Ba; B.W. Wang; L.S. Wen; D. Chen

    2005-01-01

    TiO2 thin film has attracted considerable attention in recent years, due to its different refractive index and transparency with amorphous and different crystals in the visible and near-infrared wavelength region, high dielectric constant, wide band gap, high wear resistance and stability, etc, for which make it being used in many fields. This paper aims to investigate the optical characterization of thin film TiO2 on silicon wafer. The TiO2 thin films were prepared by DC reactive magnetron sputtering process from Ti target. The reflectivity of the films was measured by UV-3101PC, and the index of refraction (n) and extinction coefficient (k) were measured by n & k Analyzer 1200.

  14. Photocatalytic degradation of methyl orange by nano-TiO_2 thin films prepared by RF magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    Fanming Meng; Ling Cao; Xueping Song; Zhaoqi Sun

    2009-01-01

    Nano-TiO_2 thin films are deposited by radio frequency (RF) magnetron sputtering using TiO_2 ceramic target and characterized by X-ray diffractometer,atomic force microscope,and ultraviolet-visible spectrophotometer.The photocatalytic activity is evaluated by light-induced degradation of methyl orange solutions (5,10,and 20 ppm) using a high pressure mercury lamp as the light source.The film is amorphous,and its energy gap is 3.02 Ev.The photocatalytic degradation of methyl orange solution is the first-order reaction and the apparent reaction rate constants are 0.00369,0.0024,and 0.00151 for the methyl orange solution concentrations of 5,10,and 20 ppm,respectively.

  15. Comparative Study of Cu Films Prepared by DC, High-Power Pulsed and Burst Magnetron Sputtering

    Science.gov (United States)

    Solovyev, A. A.; Oskirko, V. O.; Semenov, V. A.; Oskomov, K. V.; Rabotkin, S. V.

    2016-08-01

    A comparative study of deposition rate, adhesion, structural and electrical properties of nanocrystalline copper thin films deposited using direct current magnetron sputtering (DCMS) and different regimes of high power pulsed magnetron sputtering is presented. High-power impulse magnetron sputtering (HIPIMS) and burst regime (pulse packages) of magnetron sputtering are investigated. The ion and atomic flows toward the growing film during magnetron sputtering of a Cu target are determined. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used to observe the structural characterization of the films. The resistivity of the films was measured using four-point probe technique. In all sputtering regimes, Cu films have mixture crystalline orientations of [111], [200], [311] and [220] in the direction of the film growth. As peak power density in studied deposition regimes was different in order of magnitude (from 15 W/cm2 in DC regime to 3700 W/cm2 in HIPIMS), film properties were also greatly different. DCMS Cu films exhibit a porous columnar grain structure. In contrast, HIPIMS Cu films have a slightly columnar and denser composition. Cu films deposited using burst regimes at peak power density of 415 W cm-2 and ion-to-atom ratio of about 5 have the densest composition and smallest electrical resistance.

  16. Design and capabilities of an experimental setup based on magnetron sputtering for formation and deposition of size-selected metal clusters on ultra-clean surfaces

    DEFF Research Database (Denmark)

    Hartmann, Hannes; Popok, Vladimir; Barke, Ingo

    2012-01-01

    The design and performance of an experimental setup utilizing a magnetron sputtering source for production of beams of ionized size-selected clusters for deposition in ultra-high vacuum is described. For the case of copper cluster formation the influence of different source parameters is studied...... nm. Combined analysis by AFM and transmission electron microscopy (TEM) reveals that the clusters preserve almost spherical shape after the deposition on amorphous carbon substrates. Supported nanoparticles of a few nanometres in diameter have crystalline structure with a face-centered cubic (fcc...

  17. Oxidation of magnetron sputtered La-Si thin films for solide oxide fuel cell electronlytes

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, J.C. [SEG-CEMUC, Mechanical Department, University of Coimbra, Rua Luis Reis Santos, 3030-788 Coimbra (Portugal)], E-mail: joao.oliveira@dem.uc.pt; Horwat, D. [Laboratoire de Science et Genie des Surfaces (UMR 7570), Ecole des Mines, Parc de Saurupt - F 54042 Nancy Cedex (France)], E-mail: david.horwat@mines.inpl-nancy.fr; Billard, A. [Laboratoire d' Etudes et de Recherches sur les Materiaux, les Procedes et les Surfaces, UTBM, Universite de Technologie de Belfort-Montbeliard, 90010 Belfort (France)], E-mail: alain.billard@utbm.fr; Cavaleiro, A. [SEG-CEMUC, Mechanical Department, University of Coimbra, Rua Luis Reis Santos, 3030-788 Coimbra (Portugal)], E-mail: albano.cavaleiro@dem.uc.pt

    2009-01-30

    La-Si thin films were deposited on stainless steel substrates by magnetron sputtering from pure La and Si targets. The Si/(Si + La) atomic ratio in the films was varied from 43.2 to 59.3% by adjusting the discharge current on the La target. The films had a homogeneous chemical composition down to the substrate and sharp interfaces. Annealing the films in air at 1173 K promotes the formation of apatite-structure La{sub 9.33}Si{sub 6}O{sub 26} and the diffusion of different species from the film to the substrate and vice-versa, resulting in broadening the interfaces. X-Ray diffraction showed that all the as-deposited films had an amorphous structure. The formation of the LaSi{sub 2} phase at intermediate temperatures was observed for the films deposited with higher Si contents while the films deposited with lower Si contents remained amorphous up to the start of the apatite structure crystallization process. The lanthanum silicate apatite-like phase (La{sub 9.33}Si{sub 6}O{sub 26}) was obtained only after annealing at 1173 K, excepted for the film with the lower Si content which is already partially crystallized after annealing at 1073 K. Quite pure La{sub 9.33}Si{sub 6}O{sub 26} was obtained only after annealing the film with the highest Si content (Si/(Si + La) = 59.3%) although the theoretical Si/(Si + La) atomic ratio for apatite structure lanthanum silicate is 39%. For the other films, La{sub 2}O{sub 3} was always detected when the lanthanum silicate phase was formed. Both phenomena clearly resulted from the strong diffusion of silicon excess towards the stainless steel substrate.

  18. Computer simulation of sputtering of graphite target in magnetron sputtering device with two zones of erosion

    Directory of Open Access Journals (Sweden)

    Bogdanov R.V.

    2015-03-01

    Full Text Available A computer simulation program for discharge in a magnetron sputtering device with two erosion zones was developed. Basic laws of the graphite target sputtering process and transport of sputtered material to the substrate were taken into account in the Monte Carlo code. The results of computer simulation for radial distributions of density and energy flux of carbon atoms on the substrate (at different values of discharge current and pressure of the working gas confirmed the possibility of obtaining qualitative homogeneous films using this magnetron sputtering device. Also the discharge modes were determined for this magnetron sputtering device, in which it was possible to obtain such energy and density of carbon atoms fluxes, which were suitable for deposition of carbon films containing carbon nanotubes and other nanoparticles.

  19. Setup for in situ X-ray diffraction studies of thin film growth by magnetron sputtering

    CERN Document Server

    Ellmer, K; Weiss, V; Rossner, H

    2001-01-01

    A novel method is described for the in situ-investigation of nucleation and growth of thin films during magnetron sputtering. Energy dispersive X-ray diffraction with synchrotron light is used for the structural analysis during film growth. An in situ-magnetron sputtering chamber was constructed and installed at a synchrotron radiation beam line with a bending magnet. The white synchrotron light (1-70 keV) passes the sputtering chamber through Kapton windows and hits one of the substrates on a four-fold sample holder. The diffracted beam, observed under a fixed diffraction angle between 3 deg. and 10 deg., is energy analyzed by a high purity Ge-detector. The in situ-EDXRD setup is demonstrated for the growth of tin-doped indium oxide (ITO) films prepared by reactive magnetron sputtering from a metallic target.

  20. Bioactivity response of Ta{sub 1-x}O{sub x} coatings deposited by reactive DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Almeida Alves, C.F., E-mail: cristiana.alves@fisica.uminho.pt [GRF-CFUM, Physics Departament, University of Minho, Campus of Azurem, Guimaraes 4800-058 (Portugal); Cavaleiro, A. [SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, Coimbra 3030-788 (Portugal); Carvalho, S. [GRF-CFUM, Physics Departament, University of Minho, Campus of Azurem, Guimaraes 4800-058 (Portugal); SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, Coimbra 3030-788 (Portugal)

    2016-01-01

    The use of dental implants is sometimes accompanied by failure due to periimplantitis disease and subsequently poor esthetics when soft–hard tissue margin recedes. As a consequence, further research is needed for developing new bioactive surfaces able to enhance the osseous growth. Tantalum (Ta) is a promising material for dental implants since, comparing with titanium (Ti), it is bioactive and has an interesting chemistry which promotes the osseointegration. Another promising approach for implantology is the development of implants with oxidized surfaces since bone progenitor cells interact with the oxide layer forming a diffusion zone due to its ability to bind with calcium which promotes a stronger bond. In the present report Ta-based coatings were deposited by reactive DC magnetron sputtering onto Ti CP substrates in an Ar + O{sub 2} atmosphere. In order to assess the osteoconductive response of the studied materials, contact angle and in vitro tests of the samples immersed in Simulated Body Fluid (SBF) were performed. Structural results showed that oxide phases where achieved with larger amounts of oxygen (70 at.% O). More compact and smooth coatings were deposited by increasing the oxygen content. The as-deposited Ta coating presented the most hydrophobic character (100°); with increasing oxygen amount contact angles progressively diminished, down to the lowest measured value, 63°. The higher wettability is also accompanied by an increase on the surface energy. Bioactivity tests demonstrated that highest O-content coating, in good agreement with wettability and surface energy values, showed an increased affinity for apatite adhesion, with higher Ca/P ratio formation, when compared to the bare Ti substrates. - Highlights: • Ta{sub 1-x}O{sub x} coatings were deposited by reactive DC magnetron sputtering. • Amorphous oxide phases were achieved with higher oxygen amounts. • Contact angles progressively diminished, with increasing oxygen content. • Ta

  1. Decorative black TiCxOy film fabricated by DC magnetron sputtering without importing oxygen reactive gas

    Science.gov (United States)

    Ono, Katsushi; Wakabayashi, Masao; Tsukakoshi, Yukio; Abe, Yoshiyuki

    2016-02-01

    Decorative black TiCxOy films were fabricated by dc (direct current) magnetron sputtering without importing the oxygen reactive gas into the sputtering chamber. Using a ceramic target of titanium oxycarbide (TiC1.59O0.31), the oxygen content in the films could be easily controlled by adjustment of total sputtering gas pressure without remarkable change of the carbon content. The films deposited at 2.0 and 4.0 Pa, those are higher pressure when compared with that in conventional magnetron sputtering, showed an attractive black color. In particular, the film at 4.0 Pa had the composition of TiC1.03O1.10, exhibited the L* of 41.5, a* of 0.2 and b* of 0.6 in CIELAB color space. These values were smaller than those in the TiC0.29O1.38 films (L* of 45.8, a* of 1.2 and b* of 1.2) fabricated by conventional reactive sputtering method from the same target under the conditions of gas pressure of 0.3 Pa and optimized oxygen reactive gas concentration of 2.5 vol.% in sputtering gas. Analysis of XRD and XPS revealed that the black film deposited at 4.0 Pa was the amorphous film composed of TiC, TiO and C. The adhesion property and the heat resisting property were enough for decorative uses. This sputtering process has an industrial advantage that the decorative black coating with color uniformity in large area can be easily obtained by plain operation because of unnecessary of the oxygen reactive gas importing which is difficult to be controlled uniformly in the sputtering chamber.

  2. Smoothing of Discharge Inhomogeneities at High Currents in Gasless High Power Impulse Magnetron Sputtering

    CERN Document Server

    Andersson, Joakim; Anders, André

    2014-01-01

    The discharges in high power impulse magnetron sputtering (HiPIMS) have been reported to consist of azimuthally inhomogeneous plasma with locally increased light emission. The luminous zones seemingly travel around the racetrack and are implicated in generation of the high ion kinetic energies observed in HiPIMS. We show that the inhomogeneities smooth out at high discharge current to yield azimuthally homogeneous plasma. This may have implications for the spatial and kinetic energy distribution of sputtered particles, and therefore also on the thin films deposited by high power impulse magnetron sputtering.

  3. Influence of direct current plasma magnetron sputtering parameters on the material characteristics of polycrystalline copper films

    Energy Technology Data Exchange (ETDEWEB)

    Chan, K.-Y. [Thin Film Laboratory, Faculty of Engineering, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor (Malaysia)], E-mail: k.y.chan@fz-juelich.de; Luo, P.-Q.; Zhou, Z.-B. [Department of Physics, Shanghai Jiao Tong University, 800 Dongchuan Road, 200240 Shanghai (China); Tou, T.-Y.; Teo, B.-S. [Thin Film Laboratory, Faculty of Engineering, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor (Malaysia)

    2009-03-01

    Physical vapor processes using glow plasma discharge are widely employed in microelectronic industry. In particular magnetron sputtering is a major technique employed for the coating of thin films. This paper addresses the influence of direct current (DC) plasma magnetron sputtering parameters on the material characteristics of polycrystalline copper (Cu) thin films coated on silicon substrates. The influence of the sputtering parameters including DC plasma power and argon working gas pressure on the electrical and structural properties of the thin Cu films was investigated by means of surface profilometer, four-point probe and atomic force microscopy.

  4. GAS FLOW CONTROL SYSTEM IN REACTIVE MAGNETRON SPUTTERING TECHNOLOGY

    Directory of Open Access Journals (Sweden)

    I. M. Klimovich

    2015-01-01

    Full Text Available  It is known that the discharge parameters and the chemical composition of the particles flux impinging onto the substrate during a reactive magnetron sputtering are unstable. As a result spontaneous transitions between the «metal» mode of the target surface and the «poisoned» mode of the target surface have been observed. This leads to nonrepeatability of the coating compositions from process to process. The aim of this work is to design a gas flow control system for reactive sputtering processes. The control system allows to maintain a steady nonequilibrium state of the magnetron discharge in transition mode where the chemical state of the target surface is unstable. The intensities of spectral lines of the discharge spectrum are proposed as control parameters. Photodiode detectors were used for registration of intensities of spectral lines. A gas flow control system regulates argon and reactive gas flow automatically, using feedback signals from photodiode detectors on the intensities of the spectral lines, vacuum gauge, ion current sensor, sensors of discharge current and voltage. As an example, the process of reactive magnetron Ti-Al-N deposition is considered. The following discharge parameters are controlled during sputtering a composite target based on Ti with Al cylindrical inserts: current, voltage, total pressure of a gas mixture, substrate temperature, bias voltage and current of the substrate. Nitrogen flow was controlled by the spectral line intensity of titanium TiI 506,5 nm. The value of the line intensity is connected with the value of reactivity. Elemental composition and structure of the Ti-Al-N coatings were studied using Rutherford backscattering spectroscopy, scanning electron microscopy and X-ray diffraction. It was found, that stoichiometric Ti-Al-N coatings have a globular structure, enhanced hardness and low friction coefficient in contrast to Ti-Al-N coatings with nonstoichiometric composition, which have a

  5. Small grain size zirconium-based coatings deposited by magnetron sputtering at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Jimenez, O., E-mail: omar.jimenez.udg@gmail.com [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, AP 307, CP 45101 Zapopan, Jal (Mexico); Department of Materials Science and Engineering, The University of Sheffield, Sheffield S1 3JD (United Kingdom); Audronis, M.; Leyland, A. [Department of Materials Science and Engineering, The University of Sheffield, Sheffield S1 3JD (United Kingdom); Flores, M.; Rodriguez, E. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, AP 307, CP 45101 Zapopan, Jal (Mexico); Kanakis, K.; Matthews, A. [Department of Materials Science and Engineering, The University of Sheffield, Sheffield S1 3JD (United Kingdom)

    2015-09-30

    Hard, partly amorphous, ZrTiB(N) coatings were deposited by Physical Vapour Deposition (PVD) onto (111) silicon wafers at low substrate temperatures of 85 and 110 °C using Closed Field Unbalanced Magnetron Sputtering. A segmented rectangular sputter target composed of three pieces (Zr/TiB{sub 2}/Zr) was used as the source of evaporation of coating components. Two different substrate biases (i.e. floating potential and − 50 V) and N{sub 2} reactive-gas flow rates of 2, 4 and 6 sccm were employed as the main deposition parameter variables. The chemical composition, structure, morphology and mechanical properties were investigated using a variety of analytical techniques such as Glow-Discharge Optical Emission Spectroscopy, cross-sectional Scanning Electron Microscopy (SEM), Glancing Angle X-ray Diffraction (GAXRD) and nanoindentation. With other parameters fixed, coating properties were found to be dependent on the substrate negative bias and nitrogen flow rate. Linear scan profiles and SEM imaging revealed that all coatings were smooth, dense and featureless (in fracture cross section) with no apparent columnar morphology or macro-defects. GAXRD structural analysis revealed that mostly metallic phases were formed for coatings containing no nitrogen, whereas a solid solution (Zr,Ti)N single phase nitride was found in most of the reactively deposited coatings — exhibiting a very small grain size due to nitrogen and boron grain refinement effects. Hardness values from as low as 8.6 GPa up to a maximum of 25.9 GPa are related mainly to solid solution strengthening effects. The measured elastic moduli correlated with the trends in hardness behaviour; values in the range of 120–200 GPa were observed depending on the selected deposition parameters. Also, high H/E values (> 0.1) were achieved with several of the coatings.

  6. Influence of plasma parameters on the growth and properties of magnetron sputtered CNx thin films

    Science.gov (United States)

    Hellgren, Niklas; Macák, Karol; Broitman, Esteban; Johansson, Mats P.; Hultman, Lars; Sundgren, Jan-Eric

    2000-07-01

    Carbon nitride CNx thin films were grown by unbalanced dc magnetron sputtering from a graphite target in a pure N2 discharge, and with the substrate temperature Ts kept between 100 and 550 °C. A solenoid coil positioned in the vicinity of the substrate was used to support the magnetic field of the magnetron, so that the plasma could be increased near the substrate. By varying the coil current and gas pressure, the energy distribution and fluxes of N2+ ions and C neutrals could be varied independently of each other over a wide range. An array of Langmuir probes in the substrate position was used to monitor the radial ion flux distribution over the 75-mm-diam substrate, while the flux and energy distribution of neutrals was estimated through Monte Carlo simulations. The structure, surface roughness, and mechanical response of the films are found to be strongly dependent on the substrate temperature, and the fluxes and energies of the deposited particles. By controlling the process parameters, the film structure can thus be selected to be amorphous, graphite-like or fullerene-like. When depositing at 3 mTorr N2 pressure, with Ts>200 °C, a transition from a disordered graphite-like to a hard and elastic fullerene-like structure occurred when the ion flux was increased above ˜0.5-1.0 mA/cm2. The nitrogen-to-carbon concentration ratio in the films ranged from ˜0.1 to 0.65, depending on substrate temperature and gas pressure. The nitrogen film concentration did, however, not change when varying the nitrogen ion-to-carbon atom flux ratios from ˜1 to 20.

  7. Temperature-dependent wear mechanisms for magnetron-sputtered AlTiTaN hard coatings.

    Science.gov (United States)

    Khetan, Vishal; Valle, Nathalie; Duday, David; Michotte, Claude; Mitterer, Christian; Delplancke-Ogletree, Marie-Paule; Choquet, Patrick

    2014-09-10

    AlTiTaN coatings have been demonstrated to have high thermal stability at temperatures up to 900 °C. It has been speculated that the high oxidation resistance promotes an improved wear resistance, specifically for dry machining applications. This work reports on the influence of temperature up to 900 °C on the wear mechanisms of AlTiTaN hard coatings. DC magnetron-sputtered coatings were obtained from an Al(46)Ti(42)Ta(12) target, keeping the substrate bias at -100 V and the substrate temperature at 265 °C. The coatings exhibited a single-phase face-centered cubic AlTiTaN structure. The dry sliding tests revealed predominant abrasion and tribo-oxidation as wear mechanisms, depending on the wear debris formed. At room temperature, abrasion leading to surface polishing was observed. At 700 and 800 °C, slow tribo-oxidation and an amorphous oxide formed reduced the wear rate of the coating compared to room temperature. Further, an increase in temperature to 900 °C increased the wear rate significantly due to fast tribo-oxidation accompanied by grooving. The friction coefficient was found to decrease with temperature increasing from 700 to 900 °C due to the formation of oxide scales, which reduce adhesion of asperity contacts. A relationship between the oxidation and wear mechanisms was established using X-ray diffraction, Raman spectroscopy, scanning electron microscopy, surface profilometry, confocal microscopy, and dynamic secondary ion mass spectrometry.

  8. Thermal annealing effects on ultra-violet luminescence properties of Gd doped AlN

    Energy Technology Data Exchange (ETDEWEB)

    Kita, Takashi; Ishizu, Yuta; Tsuji, Kazuma; Harada, Yukihiro [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501 (Japan); Chigi, Yoshitaka; Nishimoto, Tetsuro; Tanaka, Hiroyuki; Kobayashi, Mikihiro [YUMEX INC., 400 Itoda, Yumesaki, Himeji, Hyogo 671-2114 (Japan); Ishihara, Tsuguo; Izumi, Hirokazu [Hyogo Prefectural Institute of Technology, 3-1-12 Yukihira, Suma, Kobe 654-0037 (Japan)

    2015-04-28

    We studied energy transfer from AlN to doped Gd{sup 3+} ions as a function of the post-thermal annealing temperature. Gd-doped AlN thin films were deposited on fused-silica substrates using a reactive radio-frequency magnetron sputtering technique. The film is a c-axis oriented polycrystal. The intra-orbital electron transition in Gd{sup 3+} showed an atomically sharp luminescence at 3.9 eV (318 nm). The photoluminescence (PL) excitation spectrum exhibited a resonant peak, indicating efficient energy transfer from the host AlN crystal to Gd{sup 3+} ions. The PL intensity increases approximately ten times by thermal annealing. The PL decay lifetime becomes long with annealing, and mid-gap luminescence relating to the crystal defects in AlN was also found to be reduced by annealing. These results suggest that energy dissipation of excited carriers in AlN was suppressed by annealing, and the efficiency of energy transfer into Gd{sup 3+} was improved.

  9. High frequency pulse anodising of magnetron sputtered Al–Zr and Al–Ti Coatings

    DEFF Research Database (Denmark)

    Gudla, Visweswara Chakravarthy; Bordo, Kirill; Engberg, Sara

    2016-01-01

    High frequency pulse anodising of Al–Zr and Al–Ti coatings is studied as a surface finishing technique and compared to conventional decorative DC anodising. The Al–Zr and Al–Ti coatings were deposited using DC magnetron sputtering and were heat treated after deposition to generate a multiphase mi...

  10. Fabrication of nanogradient coatings for laser devices using the method of magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Abramov, N F; Volpyan, O D; Obod, Yu A [Open Joint-Stock Company M.F. Stel' makh Polyus Research Institute, Moscow (Russian Federation); Dronskii, R V [' Fotron-Auto' Scientific Manufacture Enterprise, Moscow (Russian Federation)

    2013-09-30

    Significant advantages of the magnetron sputtering method for producing complex high-quality optical coatings for laser devices are shown. Technology aspects of efficient fabrication of such coatings are considered. The capabilities of the developed automated technological and control equipment are described. (nanogradient dielectric coatings and metamaterials)

  11. Investigation of photocatalytic activity of titanium dioxide deposited on metallic substrates by DC magnetron sputtering

    DEFF Research Database (Denmark)

    Daviðsdóttir, Svava; Canulescu, Stela; Dirscherl, Kai

    2013-01-01

    The photocatalytic properties of titanium dioxide (TiO2) coating in the anatase crystalline structure deposited on aluminium AA1050 alloy and stainless steel S316L substrates were investigated. The coating was prepared by DC magnetron sputtering. The microstructure and surface morphology...

  12. A novel DC Magnetron sputtering facility for space research and synchrotron radiation optics

    DEFF Research Database (Denmark)

    Hussain, A.M.; Christensen, Finn Erland; Pareschi, G.;

    1998-01-01

    A new DC magnetron sputtering facility has been build up at the Danish Space Research Institute (DSRI), specially designed to enable uniform coatings of large area curved optics, such as Wolter-I mirror optics used in space telescopes and curved optics used in synchrotron radiation facilities...

  13. Optimization of Ta2O5 optical thin film deposited by radio frequency magnetron sputtering.

    Science.gov (United States)

    Shakoury, R; Willey, Ronald R

    2016-07-10

    Radio frequency magnetron sputtering has been used here to find the parameters at which to deposit Ta2O5 optical thin films with negligible absorption in the visible spectrum. The design of experiment methodology was employed to minimize the number of experiments needed to find the optimal results. Two independent approaches were used to determine the index of refraction n and k values.

  14. Magnetron sputtering system stabilisation for high rate desposition of AlN films

    DEFF Research Database (Denmark)

    Fomin, A; Akhmatov, Vladislav; Selishchev, S

    1998-01-01

    The stabilisation of a planar magnetron sputtering system for reactive sputtering of AlN in a gaseous mixture of Ar and highly active NH3 was examined. The helical instability in the cathode plasma sheath was observed and methods for its damping were proposed. It was found that the deposition of c...

  15. The morphology of mass selected ruthenium nanoparticles from a magnetron-sputter gas-aggregation source

    DEFF Research Database (Denmark)

    Nielsen, Rasmus Munksgård; Murphy, Shane; Strebel, Christian Ejersbo

    2010-01-01

    We have investigated the morphology of mass selected ruthenium nanoparticles produced with a magnetron-sputter gas-aggregation source. The nanoparticles are mass selected using a quadrupole mass filter, resulting in narrow size distributions and average diameters between 2 and 15 nm. The particle...

  16. Microstructural evolution of TiC/a-C nanocomposite coatings with pulsed magnetron sputtering

    NARCIS (Netherlands)

    Pei, Y. T.; Shaha, K. P.; Chen, C. Q.; De Hosson, J. Th. M.; Bradley, J. W.; Voronin, S.; Cada, M.; DeHosson, JTM; Brebbia, CA; Nishida, SI

    2007-01-01

    The microstructure and property of magnetron Sputtered coatings are strongly affected by the intensity of concurrent ion impingement, in particular, by the energy distribution of impinging ions and the flux ratio between impinging ions and depositing atoms. In this paper, we report some striking res

  17. BN coatings deposition by magnetron sputtering of B and BN targets in electron beam generated plasma

    Science.gov (United States)

    Kamenetskikh, A. S.; Gavrilov, N. V.; Koryakova, O. V.; Cholakh, S. O.

    2017-05-01

    Boron nitride coatings were deposited by reactive pulsed magnetron sputtering of B and BN targets (50 kHz, 10 µs for B; 13.56 MHz for BN) at 2-20 mA/cm2 ion current density on the substrate. The effect of electron beam generated plasma on characteristics of magnetron discharge and phase composition of coatings was studied.

  18. Composition and structure variation for magnetron sputtered tantalum oxynitride thin films, as function of deposition parameters

    Energy Technology Data Exchange (ETDEWEB)

    Cristea, D.; Pătru, M.; Crisan, A.; Munteanu, D. [Department of Materials Science, Transilvania University, 500036 Brasov (Romania); Crăciun, D. [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Magurele (Romania); Barradas, N.P. [Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 ao km 139,7, 2695-066 Bobadela LRS (Portugal); Alves, E. [Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 ao km 139,7, 2695-066 Bobadela LRS (Portugal); Apreutesei, M. [Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR 5270, CNRS, Ecole Centrale de Lyon, Ecully F-69134 (France); MATEIS Laboratory-INSA de Lyon, Bât. B. Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Moura, C. [Center of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Cunha, L., E-mail: lcunha@fisica.uminho.pt [Center of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal)

    2015-12-15

    Highlights: • Structural evolution from β-Ta, to fcc-Ta(O,N), to amorphous Ta{sub 2}O{sub 5} with increasing P(N{sub 2} + O{sub 2}). • The substrate bias influences the N content, but does not influence the O content of the films. • The structural features of the films appear at lower P(N{sub 2} + O{sub 2}) when produced with grounded substrate. - Abstract: Tantalum oxynitride thin films were produced by magnetron sputtering. The films were deposited using a pure Ta target and a working atmosphere with a constant N{sub 2}/O{sub 2} ratio. The choice of this constant ratio limits the study concerning the influence of each reactive gas, but allows a deeper understanding of the aspects related to the affinity of Ta to the non-metallic elements and it is economically advantageous. This work begins by analysing the data obtained directly from the film deposition stage, followed by the analysis of the morphology, composition and structure. For a better understanding regarding the influence of the deposition parameters, the analyses are presented by using the following criterion: the films were divided into two sets, one of them produced with grounded substrate holder and the other with a polarization of −50 V. Each one of these sets was produced with different partial pressure of the reactive gases P(N{sub 2} + O{sub 2}). All the films exhibited a O/N ratio higher than the N/O ratio in the deposition chamber atmosphere. In the case of the films produced with grounded substrate holder, a strong increase of the O content is observed, associated to the strong decrease of the N content, when P(N{sub 2} + O{sub 2}) is higher than 0.13 Pa. The higher Ta affinity for O strongly influences the structural evolution of the films. Grazing incidence X-ray diffraction showed that the lower partial pressure films were crystalline, while X-ray reflectivity studies found out that the density of the films depended on the deposition conditions: the higher the gas pressure, the

  19. Structural, chemical and nanomechanical investigations of SiC/polymeric a-C:H films deposited by reactive RF unbalanced magnetron sputtering

    Science.gov (United States)

    Tomastik, C.; Lackner, J. M.; Pauschitz, A.; Roy, M.

    2016-03-01

    Amorphous carbon (or diamond-like carbon, DLC) films have shown a number of important properties usable for a wide range of applications for very thin coatings with low friction and good wear resistance. DLC films alloyed with (semi-)metals show some improved properties and can be deposited by various methods. Among those, the widely used magnetron sputtering of carbon targets is known to increase the number of defects in the films. Therefore, in this paper an alternative approach of depositing silicon-carbide-containing polymeric hydrogenated DLC films using unbalanced magnetron sputtering was investigated. The influence of the C2H2 precursor concentration in the deposition chamber on the chemical and structural properties of the deposited films was investigated by Raman spectroscopy, X-ray photoelectron spectroscopy and elastic recoil detection analysis. Roughness, mechanical properties and scratch response of the films were evaluated with the help of atomic force microscopy and nanoindentation. The Raman spectra revealed a strong correlation of the film structure with the C2H2 concentration during deposition. A higher C2H2 flow rate results in an increase in SiC content and decrease in hydrogen content in the film. This in turn increases hardness and elastic modulus and decreases the ratio H/E and H3/E2. The highest scratch resistance is exhibited by the film with the highest hardness, and the film having the highest overall sp3 bond content shows the highest elastic recovery during scratching.

  20. A Spectroscopic Ellipsometry Study of TiO2 Thin Films Prepared by dc Reactive Magnetron Sputtering: Annealing Temperature Effect

    Institute of Scientific and Technical Information of China (English)

    Mati Horprathum; Pongpan Chindaudom; Pichet Limsuwan

    2007-01-01

    TiO2 thin Rims are obtained by dc reactive magnetron sputtering. A target of titanium (99.995%) and a mixture of argon and oxygen gases are used to deposit TiO2 films on to silicon wafers (100). The crystalline structure of deposited and annealed film are deduced by variable-angle spectroscopic ellipsometry (VASE) and supported by x-ray diffractometry. The optical properties of the Sims are examined by VASE. Measurements of ellipsometry are performed in the spectral range 0.72-3.55 eV at incident angle 75°. Several SE models, categorized by physical and optical models, are proposed based on the 'simpler better' rule and curve-fits, which are generated and compared to the experimental data using the regression analysis. It has been found that the triple-layer physical model together with the Cody-Lorentz dispersion model offer the most convincing result. The as-deposited films are found to be inhomogeneous and amorphous, whereas the annealed films present the phase transition to anatase and rutile structures. The refractive index of TiO2 thin films increases with annealing temperature. A more detailed analysis further reveals that thickness of the top sub-layer increases, whereas the region of the bottom amorphous sub-layer shrinks when the films are annealed at 300°C.

  1. Structure and optical properties of aSiAl and aSiAlHx magnetron sputtered thin films

    Directory of Open Access Journals (Sweden)

    Annett Thøgersen

    2016-03-01

    Full Text Available Thin films of homogeneous mixture of amorphous silicon and aluminum were produced with magnetron sputtering using 2-phase Al–Si targets. The films exhibited variable compositions, with and without the presence of hydrogen, aSi1−xAlx and aSi1−xAlxHy. The structure and optical properties of the films were investigated using transmission electron microscopy, X-ray photoelectron spectroscopy, UV-VisNIR spectrometry, ellipsometry, and atomistic modeling. We studied the effect of alloying aSi with Al (within the range 0–25 at. % on the optical band gap, refractive index, transmission, and absorption. Alloying aSi with Al resulted in a non-transparent film with a low band gap (1 eV. Variations of the Al and hydrogen content allowed for tuning of the optoelectronic properties. The films are stable up to a temperature of 300 °C. At this temperature, we observed Al induced crystallization of the amorphous silicon and the presence of large Al particles in a crystalline Si matrix.

  2. Characterization of high power impulse magnetron sputtering discharges

    Science.gov (United States)

    Hala, Matej

    Paper I: In the first paper, we present a new approach in the characterization of the high power pulsed magnetron sputtering (HiPIMS) discharge evolution—time- and species-resolved plasma imaging—employing a set of band-pass optical interference filters suitable for the isolation of the emission originating from different species populating the plasma. We demonstrate that the introduction of such filters can be used to distinguish different phases of the discharge, and to visualize numerous plasma effects including background gas excitations during the discharge ignition, gas shock waves, and expansion of metal-rich plasmas. In particular, the application of this technique is shown on the diagnostics of the 200 µs long non-reactive HiPIMS discharges using a Cr target. Paper II: In order to gain further information about the dynamics of reactive HiPIMS discharges, both fast plasma imaging and time- and space-resolved optical emission spectroscopy (OES) are used for a systematic investigation of the 200 µs long HiPIMS pulses operated in Ar, N2 and N 2/Ar mixtures and at various pressures. It is observed that the dense metal plasma created next to the target propagates in the reactor at a speed ranging from 0.7 to 3.5 km s-1, depending on the working gas composition and the pressure. In fact, it increases with higher N 2 concentration and with lower pressure. The visible form of the propagating plasma wave changes from a hemispherical shape in Ar to a drop-like shape extending far from the target with increasing N2 concentration, owing to the significant emission from molecular N2. Interestingly, the evidence of the target self-sputtering is found for all investigated conditions, including pure N2 atmosphere. Paper III: Here, we report on the time- and species-resolved plasma imaging analysis of the dynamics of the 200 µs long HiPIMS discharges above a Cr target ignited in pure O2. It is shown that the discharge emission is dominated solely by neutral and

  3. Deposition of thin films by magnetron sputtering molybdenum in samples of pure copper; Deposicao de filmes finos de molibdenio por magnetron sputtering em amostra de cobre puro

    Energy Technology Data Exchange (ETDEWEB)

    Ferreira, N.M.; Almeida, E.O. de; Alves Junior, C. [Universidade Federal do Rio Grande do Norte, Campus Universitario Lagoa Nova, PPGCEM - Natal, RN (Brazil); Lourenco, J.M. [Instituto Federal de Educacao, Ciencias e Tecnologia do Rio Grande do Norte (IFRN), Natal, RN (Brazil)

    2010-07-01

    The deposition surface is a process of thermochemical treatment, which involves the deposition of a thin film usually about one to two microns on a metallic substrate, which constitutes one of the most important surface engineering techniques. The plasma deposition process with the configuration of magnetron sputtering it is removing material from a solid surface (target) through the impact of energetic particles from plasma. The aim of this study is to characterize the microstructure of the material under study using the techniques of optical microscopy and scanning electron microscopy. (author)

  4. Effect of Mg/Ni ratio on microstructure of Mg–Ni films deposited by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Matsuda, Junko, E-mail: junko.matsuda@i2cner.kyushu-u.ac.jp [International Institute for Carbon-Neutral Energy Research (WPI-I2CNER), Kyushu University, Motooka 744, Nishi-ku, Fukuoka 819-0395 (Japan); Uchiyama, Naoki; Kanai, Tomomi; Harada, Kazumi [ATSUMITEC CO., LTD., Ubumi 7111, Yuto-cho, Nishi-ku, Hamamatsu 431-0192 (Japan); Akiba, Etsuo [International Institute for Carbon-Neutral Energy Research (WPI-I2CNER), Kyushu University, Motooka 744, Nishi-ku, Fukuoka 819-0395 (Japan); Department of Mechanical Engineering, Faculty of Engineering, Kyushu University, Motooka 744, Nishi-ku, Fukuoka 819-0395 (Japan)

    2014-12-25

    Highlights: • Hydrogenation/dehydrogenation properties of Mg–Ni films depend on the Mg/Ni ratio. • Mg{sub 6}Ni films are composed of Mg-rich amorphous matrix and Mg{sub 2}Ni nanocrystals. • Mg{sub 2}Ni is fully amorphous, in contrast Mg crystallization occurs in Mg{sub 10}Ni films. • Mg{sub 6}Ni films after hydrogenation include Mg{sub 2}NiH{sub 4}, MgH{sub 2} and Mg crystals. • Mg crystallization causes to reduce desorption kinetics and cycle ability. - Abstract: The relationship between the Mg/Ni ratio and microstructure of Mg–Ni films with a Pd-cap deposited by magnetron sputtering is investigated using transmission electron microscopy. As a result, the 6Mg–Ni films are observed to be composed of a Mg-rich amorphous matrix and Mg{sub 2}Ni nanocrystals. In contrast, the 10Mg–Ni films contain Mg nanocrystals and Mg-rich amorphous. The 2Mg–Ni films, which absorb/desorb hydrogen repeatedly as well as 6Mg–Ni films, are fully amorphous and have a homogeneous distribution of Mg and Ni. The hydrogenated 6Mg–Ni film, after 200 cycles of hydrogenation/dehydrogenation, includes Mg{sub 2}NiH{sub 4} and MgH{sub 2} nanocrystals as well as Mg crystals. In conclusion, the crystallization of Mg reduces desorption kinetics and cycle ability of the Mg–Ni films. Our results suggested that Mg crystallization occurs in films with an initial Mg/Ni ratio greater than 7.7 the eutectic composition between Mg and Mg{sub 2}Ni.

  5. Growth, structure and magnetic properties of magnetron sputtered FePt thin films

    Energy Technology Data Exchange (ETDEWEB)

    Cantelli, Valentina

    2010-07-01

    The L1{sub 0} FePt phase belongs to the most promising hard ferromagnetic materials for high density recording media. The main challenges for thin FePt films are: (i) to lower the process temperature for the transition from the soft magnetic A1 to the hard magnetic L1{sub 0} phase, (ii) to realize c-axes preferential oriented layers independently from the substrate nature and (iii) to control layer morphology supporting the formation of FePt-L1{sub 0} selforganized isolated nanoislands towards an increase of the signal-to-noise ratio. In this study, dc magnetron sputtered FePt thin films on amorphous substrates were investigated. The work is focused on the correlation between structural and magnetic properties with respect to the influence of deposition parameters like growth mode (cosputtering vs. layer - by - layer) and the variation of the deposition gas (Ar, Xe) or pressure (0.3-3 Pa). In low-pressure Ar discharges, high energetic particle impacts support vacancies formation during layer growth lowering the phase transition temperature to (320{+-}20) C. By reducing the particle kinetic energy in Xe discharges, highly (001) preferential oriented L1{sub 0}-FePt films were obtained on a-SiO{sub 2} after vacuum annealing. L1{sub 0}-FePt nano-island formation was supported by the introduction of an Ag matrix, or by random ballistic aggregation and atomic self shadowing realized by FePt depositions at very high pressure (3 Pa). The high coercivity (1.5 T) of granular, magnetic isotropic FePt layers, deposited in Ar discharges, was measured with SQUID magnetometer hysteresis loops. For non-granular films with (001) preferential orientation the coercivity decreased (0.6 T) together with an enhancement of the out-of- plane anisotropy. Nanoislands show a coercive field close to the values obtained for granular layers but exhibit an in-plane easy axis due to shape anisotropy effects. An extensive study with different synchrotron X-ray scattering techniques, mainly

  6. Electrical properties of magnetron sputtered ZnO:Al samples determined by Hall and Seebeck measurements

    Energy Technology Data Exchange (ETDEWEB)

    Dewald, Wilma; Sittinger, Volker; Szyszka, Bernd [Fraunhofer Institute for Surface Engineering and Thin Films (IST), Braunschweig (Germany); Wimmer, Mark; Ruske, Florian [Helmholtz-Zentrum Berlin fuer Materialien und Energie (HZB), Berlin (Germany)

    2010-07-01

    Transparent conductive oxides (TCOs) play a big role in display and photovoltaic technology. One of the most promising materials for photovoltaic applications is aluminum doped zinc oxide. The electrical properties of differently prepared ZnO:Al films will be analyzed in this paper. Carrier mobility and free carrier density are varying in a wide range depending on the preparation method and doping level. Reactive mid frequency magnetron sputtering of a metallic Zn:Al target, radio frequency and direct current magnetron sputtering of a ceramic ZnO:Al{sub 2}O{sub 3} target are considered as well as the post deposition annealing of samples, which increases mobility significantly. The carrier mobility in polycrystalline aluminum doped ZnO is limited by scattering at grain boundaries and at ionized impurities. With Hall and Seebeck measurements insight will be given in transport and scatter mechanisms for the different samples.

  7. Magnetron sputtering of copper on thermosensitive polymer materials of the gas centrifuge rotors

    Science.gov (United States)

    Borisevich, V.; Senchenkov, S.; Titov, D.

    2016-09-01

    Magnetron sputtering is the well-known and widely-used deposition technique for coating versatile high-quality and well-adhered films. However, the technology has some limitations, caused by high temperatures on the coating surface. The paper is devoted to the experimental development of a process of magnetron sputtering of copper on a surface coated with a thermosensitive polymer made of carbon fiber with epoxide binder. This process is applied for balancing a rotor of a gas centrifuge for isotope separation. The optimum operating parameters of the process are found and discussed. They were in quantitative agreement with data obtained by means of non-stationary modeling based on a global description of plasma in the typical geometry of the magnetron discharges obtained in independent research. The structure of the resulting layer is investigated.

  8. Resistive switching behavior of RF magnetron sputtered ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rajalakshmi, R.; Angappane, S., E-mail: angappane@cnsms.res.in [Centre for Nano and Soft Matter Sciences, Jalahalli, Bangalore-560013 (India)

    2015-06-24

    The resistive switching characteristics of RF magnetron sputtered zinc oxide thin films have been studied. The x-ray diffraction studies confirm the formation of crystalline ZnO on Pt/TiO{sub 2}/SiO{sub x}/Si substrate. We have fabricated Cu/ZnO/Pt device using a shadow masking technique for resistive switching study. Our Cu/ZnO/Pt device exhibits a unipolar resistive switching behaviour. The switching observed in our device could be related to oxygen vacancies or Cu ions that generate the conducting filaments responsible for resistive switching. We found HRS to LRS resistance ratio of as high as ∼200 for our Cu/ZnO/Pt device. The higher resistance ratio and stability of Cu/ZnO/Pt device would make our RF magnetron sputtered zinc oxide thin films suitable for non volatile memory applications.

  9. Resistive switching behavior of RF magnetron sputtered ZnO thin films

    Science.gov (United States)

    Rajalakshmi, R.; Angappane, S.

    2015-06-01

    The resistive switching characteristics of RF magnetron sputtered zinc oxide thin films have been studied. The x-ray diffraction studies confirm the formation of crystalline ZnO on Pt/TiO2/SiOx/Si substrate. We have fabricated Cu/ZnO/Pt device using a shadow masking technique for resistive switching study. Our Cu/ZnO/Pt device exhibits a unipolar resistive switching behaviour. The switching observed in our device could be related to oxygen vacancies or Cu ions that generate the conducting filaments responsible for resistive switching. We found HRS to LRS resistance ratio of as high as ˜200 for our Cu/ZnO/Pt device. The higher resistance ratio and stability of Cu/ZnO/Pt device would make our RF magnetron sputtered zinc oxide thin films suitable for non volatile memory applications.

  10. Annealing effects of sapphire substrate on properties of ZnO films grown by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Y.Z. [South China Normal University, School of Physics and Telecommunication Engineering, Guangzhou (China); Xu, J. [Chinese Academy of Sciences, Shanghai Institute of Optics and Fine Mechanics, P.O. Box 800-211, Shanghai (China)

    2007-09-15

    The annealing effects of sapphire substrates on the quality of epitaxial ZnO films grown by dc reactive magnetron sputtering were studied. The atomic steps formed on (0001) sapphire ({alpha}-Al{sub 2}O{sub 3}) substrates surface by annealing at high temperature were analyzed by atomic force microscopy. Their influence on the growth of ZnO films was examined by X-ray diffraction and photoluminescence measurements. Experimental results indicate that the film quality is strongly affected by annealing treatment of the sapphire substrate surface. The optimum annealing temperature of sapphire substrates for ZnO grown by magnetron sputtering is 1400 C for 1 h in air. (orig.)

  11. Polyester fabric coated with Ag/ZnO composite film by magnetron sputtering

    Science.gov (United States)

    Yuan, Xiaohong; Xu, Wenzheng; Huang, Fenglin; Chen, Dongsheng; Wei, Qufu

    2016-12-01

    Ag/ZnO composite film was successfully deposited on polyester fabric by using direct current (DC) magnetron sputtering and radio frequency (RF) magnetron reaction sputtering techniques with pure silver (Ag) and zinc (Zn) targets. X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) were used to examine the deposited film on the fabric. It was found that the zinc film coated on Ag film before RF reactive sputtering could protect the silver film from oxidation. Anti-ultraviolet property and antistatic property of the coated samples using different magnetron sputtering methods were also investigated. The experimental results showed that Ag film was oxidized into in Ag2O film in high vacuum oxygen environment. The deposition of Zn film on the surface of the fabric coated with Ag film before RF reactive sputtering, could successfully obtained Ag/ZnO composite film, and also generated structural color on the polyester fabric.

  12. Characterization thin films TiO2 obtained in the magnetron sputtering process

    Science.gov (United States)

    Kamiński, Maciej; Firek, Piotr; Caban, Piotr

    2016-12-01

    The aim of the study was to elucidate influence parameters of magnetron sputtering process on growth rate and quality of titanium dioxide thin films. TiO2 films were produced on two inch silicon wafers by means of magnetron sputtering method. Characterization of samples was performed using ellipsometer and atomic force microscope (AFM). Currentvoltage (I-V) and capacitance-voltage (C-V) measurements were also carried out. The results enable to determine impact of pressure, power, gases flow and process duration on the physical parameters obtained layers such as electrical permittivity, flat band voltage and surface topography. Experiments were designed according to orthogonal array Taguchi method. Respective trends impact were plotted.

  13. Preparation and characterization of Pd-Ag alloy composite membrane with magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    赵宏宾[1; 熊国兴[2; N.Stroh[3; H.Brunner[4

    1999-01-01

    A Pd-Ag (24 wt%) alloy composite membrane was prepared by the magnetron sputtering. A γ-Al2O3 membrane was synthesized by the sol-gel method and used as substrate of the Pd-Ag alloy film. The process parameters of the magnetron sputtering were optimized as a function of the compactness of the Pd-Ag alloy film. The best membrane with a thickness of 1 μm was produced with a sputtering pressure of 2.7 Pa and a substrate temperature of 400℃. The membrane had an H2/N2 permselectivity of 51.5--1000 and an H2 permeation rate of 0.036--1.17×10-5cm3/cm2·s· Pa, depending on operating conditions.

  14. Are the argon metastables important in high power impulse magnetron sputtering discharges?

    Energy Technology Data Exchange (ETDEWEB)

    Gudmundsson, J. T., E-mail: tumi@hi.is [Department of Space and Plasma Physics, School of Electrical Engineering, KTH Royal Institute of Technology, SE-100 44 Stockholm (Sweden); Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik (Iceland); Lundin, D.; Minea, T. M. [Laboratoire de Physique des Gaz et Plasmas - LPGP, UMR 8578 CNRS, Université Paris-Sud, 91405 Orsay Cedex (France); Stancu, G. D. [CentraleSupélec, Grande Voie des Vignes, 92295 Chatenay-Malabry Cedex (France); CNRS, UPR 288 Laboratoire EM2C, Grande Voie des Vignes, 92295 Chatenay-Malabry Cedex (France); Brenning, N. [Department of Space and Plasma Physics, School of Electrical Engineering, KTH Royal Institute of Technology, SE-100 44 Stockholm (Sweden); Plasma and Coatings Physics Division, IFM-Materials Physics, Linköping University, SE-581 83 Linköping (Sweden)

    2015-11-15

    We use an ionization region model to explore the ionization processes in the high power impulse magnetron sputtering (HiPIMS) discharge in argon with a titanium target. In conventional dc magnetron sputtering (dcMS), stepwise ionization can be an important route for ionization of the argon gas. However, in the HiPIMS discharge stepwise ionization is found to be negligible during the breakdown phase of the HiPIMS pulse and becomes significant (but never dominating) only later in the pulse. For the sputtered species, Penning ionization can be a significant ionization mechanism in the dcMS discharges, while in the HiPIMS discharge Penning ionization is always negligible as compared to electron impact ionization. The main reasons for these differences are a higher plasma density in the HiPIMS discharge, and a higher electron temperature. Furthermore, we explore the ionization fraction and the ionized flux fraction of the sputtered vapor and compare with recent experimental work.

  15. Microstructural evaluation of NiTi-based films deposited by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Crăciunescu, Corneliu M., E-mail: corneliu.craciunescu@upt.ro; Mitelea, Ion, E-mail: corneliu.craciunescu@upt.ro; Budău, Victor, E-mail: corneliu.craciunescu@upt.ro [Department of Materials and Manufacturing Engineering, Politehnica University of Timisoara (Romania); Ercuţa, Aurel [Department of Materials and Manufacturing Engineering, Politehnica University of Timisoara and Department of Physics, West University Timisoara (Romania)

    2014-11-24

    Shape memory alloy films belonging to the NiTi-based systems were deposited on heated and unheated substrates, by magnetron sputtering in a custom made system, and their structure and composition was analyzed using electron microscopy. Several substrates were used for the depositions: glass, Cu-Zn-Al, Cu-Al-Ni and Ti-NiCu shape memory alloy ribbons and kapton. The composition of the Ti-Ni-Cu films showed limited differences, compared to the one of the target and the microstructure for the DC magnetron sputtering revealed crystallized structure with features determined on peel off samples from a Si wafer. Both inter and transcrystalline fractures were observed and related to the interfacial stress developed on cooling from deposition temperature.

  16. Catalytic growth of ZnO nanostructures by r.f. magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Arroyo-Hernández María

    2011-01-01

    Full Text Available Abstract The catalytic effect of gold seed particles deposited on a substrate prior to zinc oxide (ZnO thin film growth by magnetron sputtering was investigated. For this purpose, selected ultra thin gold layers, with thicknesses close to the percolation threshold, are deposited by thermal evaporation in ultra high vacuum (UHV conditions and subsequently annealed to form gold nanodroplets. The ZnO structures are subsequently deposited by r.f. magnetron sputtering in a UHV chamber, and possible morphological differences between the ZnO grown on top of the substrate and on the gold are investigated. The results indicate a moderate catalytic effect for a deposited gold underlayer of 4 nm, quite close to the gold thin film percolation thickness.

  17. Electrical and Optical Properties of Fluorine Doped Tin Oxide Thin Films Prepared by Magnetron Sputtering

    OpenAIRE

    2014-01-01

    Fluorine doped tin oxide (FTO) coatings have been prepared using the mid-frequency pulsed DC closed field unbalanced magnetron sputtering technique in an Ar/O2 atmosphere using blends of tin oxide and tin fluoride powder formed into targets. FTO coatings were deposited with a thickness of 400 nm on glass substrates. No post-deposition annealing treatments were carried out. The effects of the chemical composition on the structural (phase, grain size), optical (transmission, optical band-gap) ...

  18. Electrochemical Performance of rf Magnetron Sputtered LiCoO2 Thin Film Positive Electrodes

    Science.gov (United States)

    Kumar, P. Jeevan; Babu, K. Jayanth; Hussain, O. M.

    2010-12-01

    Thin films of LiCoO2 were grown by rf magnetron sputtering technique and studied the influence of In situ annealing treatment on microstructural and electrochemical properties of the films. Annealing treatment in presence of O2 ambient develops characteristic (104) plan in relative to (003) plane texture indicating that the films have HT-layered structure with R3¯m symmetry. The effect is discussed in terms of grain size, cycling stability, reversibility and the specific discharge capacity.

  19. TiO2 Thin Film UV Detectors Deposited by DC Reactive Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    ZHANG Li-wei; YAO Ning; ZHANG Bing-lin; FAN Zhi-qin; YANG Shi-e; LU Zhan-ling

    2004-01-01

    Crystalline TiO2 thin films were prepared by DC reactive magnetron sputtering on indium-tin oxide(ITO) thin film deposited on quartz substrate, the photoconductive UV detector on TiO2 thin films was based on a sandwich structure of C/ TiO2/ITO. The measurement of the I-V characteristics for these devices shows good ohmic contact. The photoresponse of TiO2 thin films was analyzed at different bias voltage. Voltage.

  20. Deposition of thin titanium-copper films with antimicrobial effect by advanced magnetron sputtering methods

    Energy Technology Data Exchange (ETDEWEB)

    Stranak, V., E-mail: stranak@physik.uni-greifswald.de [University of Greifswald, Institute of Physics, Felix-Hausdorff Str. 6, 17489 Greifswald (Germany); Wulff, H. [University of Greifswald, Institute of Physics, Felix-Hausdorff Str. 6, 17489 Greifswald (Germany); Rebl, H. [University of Rostock, Biomedical Res. Center, Dept. of Cell Biology, Schillingallee 69, 18057 Rostock (Germany); Zietz, C. [University of Rostock, Dept. of Orthopaedics, Doberaner Str. 142, 18057 Rostock (Germany); Arndt, K. [University of Rostock, Dept. of Med. Microbiol., Virology and Hygiene, Schillingallee 70, 18057 Rostock (Germany); Bogdanowicz, R. [University of Greifswald, Institute of Physics, Felix-Hausdorff Str. 6, 17489 Greifswald (Germany); Nebe, B. [University of Rostock, Biomedical Res. Center, Dept. of Cell Biology, Schillingallee 69, 18057 Rostock (Germany); Bader, R. [University of Rostock, Dept. of Orthopaedics, Doberaner Str. 142, 18057 Rostock (Germany); Podbielski, A. [University of Rostock, Dept. of Med. Microbiol., Virology and Hygiene, Schillingallee 70, 18057 Rostock (Germany); Hubicka, Z. [Academy of Sciences of the Czech Republic, Institute of Physics, Na Slovance 2, 180 00 Prague (Czech Republic); Hippler, R. [University of Greifswald, Institute of Physics, Felix-Hausdorff Str. 6, 17489 Greifswald (Germany)

    2011-10-10

    The antibacterial effect of thin titanium-copper (Ti-Cu) films combined with sufficient growth of human osteoblastic cells is reported in the paper. Thin Ti-Cu films were prepared by three different plasma-assisted magnetron sputtering methods: direct current magnetron sputtering (dc-MS), dual magnetron sputtering (dual-MS) as well as dual high power impulse magnetron sputtering (dual-HiPIMS). The antimicrobial effect is caused by copper released from the metallic Ti-Cu films, which was measured by atomic absorption spectroscopy (AAS). The copper release is influenced by the chemical and physical properties of the deposited films and was investigated by X-ray diffractometry and X-ray reflectometry (GIXD and XR) techniques. It was found that, within the first 24 h the amount of Cu released from dual-HiPIMS films (about 250 {mu}g) was much higher than from dc-MS and dual-MS films. In vitro planktonic growth tests on Ti-Cu surfaces for Staphylococcus epidermidis and S. aureus demonstrated the killing of both bacteria using the Ti-Cu films prepared using the dual-HiPIMS technique. The killing effects on biofilm bacteria were less obvious. After the total release of copper from the Ti-Cu film the vitality of exposed human osteoblast MG-63 cells increased significantly. An initial cytotoxic effect followed by the growth of osteoblastic cells was demonstrated. The cytotoxic effect combined with growth of osteoblastic cells could be used in joint replacement surgery to reduce the possibility of infection and to increase adoption of the implants. Highlights: {yields} Ti-Cu films with significant cytotoxic effect were prepared by dual-HiPIMS technique. {yields} The cytotoxic effect is caused by total release of copper species from thin films. {yields} The copper release is influenced by crystallography and chemical properties of thin films. {yields} Sufficient growth of osteoblastic cells follows after copper release.

  1. Dynamic Deposition of Nanocopper Film on the β-SiCp Surface by Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Hu Ming

    2015-01-01

    Full Text Available The uniform nanocopper film was deposited on the surface of micron β-SiC particle by magnetron sputtering technology successfully. The surface morphology and phase constitution of the β-SiC particle with nanocopper film were analyzed and dynamic deposition behavior was investigated in detail. The concept of dynamic deposition was put forward to interpret formation mechanism of copper nanofilm on the surface of β-SiC particles.

  2. The Influence of Hydrogen on the Properties of Zinc Sulfide Thin Films Deposited by Magnetron Sputtering

    OpenAIRE

    2014-01-01

    Zinc sulfide thin films have been deposited with hydrogen in Ar and Ar+H2 atmosphere by radio frequency magnetron sputtering. The thickness, structural properties, composition, surface morphology, and optical and electrical properties of the films have been investigated. Effect of hydrogen on the properties of the film was studied. The results showed that hydrogen leads to better crystallinity and larger crystallite size of ZnS polycrystalline films. The band gaps of the films in Ar+H2 are ab...

  3. Optical and morphological properties of porous diamond-like-carbon films deposited by magnetron sputtering

    OpenAIRE

    Baroni, M. P. M. A.; Conceição, M. Ventura; Rosa, R. R.; Persson, C.; Arwin, H.; Silva Jr., E.F. da; Roman, L.S.; Nakamura, O.; I. Pepe; Silva, A. Ferreira da

    2006-01-01

    RESTRITO Porous diamond-like-carbon (PDLC) thin films obtained on silicon substrate by DC low energy magnetron sputtering have been investigated by photoluminescence, transmission and reflection spectroscopy, photoacoustic and spectroscopic ellipsometry. The absorption features observed for these films show similarities with those of porous silicon (PS) as well as in the performed gradient structural pattern classification of the SFM porosity, by means of the computational GPA-flyby enviro...

  4. Experimental investigation of quasiperiodic-chaotic-quasiperiodic-chaotic transition in a direct current magnetron sputtering plasma

    Energy Technology Data Exchange (ETDEWEB)

    Sabavath, Gopi Kishan; Banerjee, I.; Mahapatra, S. K., E-mail: skmahapatra@bitmesra.ac.in [Plasma Laboratory, Department of Physics, Birla Institute of Technology-Mesra, Ranchi 835215 (India); Shaw, Pankaj Kumar; Sekar Iyengar, A. N. [Plasma Physics Division, Saha Institute of Nuclear Physics, 1/AF, Bidhannagar, Kolkata 700064 (India)

    2015-08-15

    Floating potential fluctuations from a direct current magnetron sputtering plasma have been analysed using time series analysis techniques like phase space plots, power spectra, frequency bifurcation plot, etc. The system exhibits quasiperiodic-chaotic-quasiperiodic-chaotic transitions as the discharge voltage was increased. The transitions of the fluctuations, quantified using the largest Lyapunov exponent, have been corroborated by Hurst exponent and the Shannon entropy. The Shannon entropy is high for quasiperiodic and low for chaotic oscillations.

  5. A high power impulse magnetron sputtering model to explain high deposition rate magnetic field configurations

    Science.gov (United States)

    Raman, Priya; Weberski, Justin; Cheng, Matthew; Shchelkanov, Ivan; Ruzic, David N.

    2016-10-01

    High Power Impulse Magnetron Sputtering (HiPIMS) is one of the recent developments in the field of magnetron sputtering technology that is capable of producing high performance, high quality thin films. Commercial implementation of HiPIMS technology has been a huge challenge due to its lower deposition rates compared to direct current Magnetron Sputtering. The cylindrically symmetric "TriPack" magnet pack for a 10 cm sputter magnetron that was developed at the Center for Plasma Material Interactions was able to produce higher deposition rates in HiPIMS compared to conventional pack HiPIMS for the same average power. The "TriPack" magnet pack in HiPIMS produces superior substrate uniformity without the need of substrate rotation in addition to producing higher metal ion fraction to the substrate when compared to the conventional pack HiPIMS [Raman et al., Surf. Coat. Technol. 293, 10 (2016)]. The films that are deposited using the "TriPack" magnet pack have much smaller grains compared to conventional pack DC and HiPIMS films. In this paper, the reasons behind the observed increase in HiPIMS deposition rates from the TriPack magnet pack along with a modified particle flux model is discussed.

  6. Fabrication and characterization of flaky core-shell particles by magnetron sputtering silver onto diatomite

    Science.gov (United States)

    Wang, Yuanyuan; Zhang, Deyuan; Cai, Jun

    2016-02-01

    Diatomite has delicate porous structures and various shapes, making them ideal templates for microscopic core-shell particles fabrication. In this study, a new process of magnetron sputtering assisted with photoresist positioning was proposed to fabricate lightweight silver coated porous diatomite with superior coating quality and performance. The diatomite has been treated with different sputtering time to investigate the silver film growing process on the surface. The morphologies, constituents, phase structures and surface roughness of the silver coated diatomite were analyzed with SEM, EDS, XRD and AFM respectively. The results showed that the optimized magnetron sputtering time was 8-16 min, under which the diatomite templates were successfully coated with uniform silver film, which exhibits face centered cubic (fcc) structure, and the initial porous structures were kept. Moreover, this silver coating has lower surface roughness (RMS 4.513 ± 0.2 nm) than that obtained by electroless plating (RMS 15.692 ± 0.5 nm). And the infrared emissivity of coatings made with magnetron sputtering and electroless plating silver coated diatomite can reach to the lowest value of 0.528 and 0.716 respectively.

  7. Influence and determinative factors of ion-to-atom arrival ratio in unbalanced magnetron sputtering systems

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Low pressure sputtering with a controlled ratio of ion flux to deposited atom flux at the condensing surface is one of the main directions of development of magnetron sputtering methods.Unbalanced magnetron sputtering,by producing dense secondary plasma around the substrate,provides a high ion current density.The closed-field unbalanced magnetron sputtering system (CFUBMS) has been established as a versatile technique for high-rate deposition high-quality metal,alloy,and ceramic thin films.The key factor in the CFUBMS system is the ability to transport high ion currents to the substrate,which can enhance the formation of full dense coatings at relatively low value homologous temperature.The investigation shows that the energy of ions incidenced at the substrate and the ratio of the flux of these ions to the flux of condensing atoms are the fundamental parameters in determining the structure and properties of films produced by ion-assisted deposition processes.Increasing ion bombardment during deposition combined with increasing mobility of the condensing atoms favors the formation of a dense microstructure and a smooth surface.

  8. Electrical properties of AlN{sub x}O{sub y} thin films prepared by reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Borges, J., E-mail: joelborges@fisica.uminho.pt [Centro de Fisica, Universidade do Minho, 4710-057 Braga (Portugal); Martin, N. [Institut FEMTO-ST, Departement MN2S, UMR 6174 (CNRS, UFC, ENSMM, UTBM) 32, Avenue de l' Observatoire 25044 BESANCON Cedex (France); Barradas, N.P.; Alves, E. [Instituto Superior Tecnico, Instituto Tecnologico Nuclear, E.N. 10, 2686-953 Sacavem (Portugal); Eyidi, D.; Beaufort, M.F.; Riviere, J.P. [Institut PPRIME, UPR 3346 CNRS-Universite de Poitiers-ENSMA, Departement de Physique et Mecanique des Materiaux, BP 30179 86962 Chasseneuil-Futuroscope Cedex (France); Vaz, F.; Marques, L. [Centro de Fisica, Universidade do Minho, 4710-057 Braga (Portugal)

    2012-08-31

    Direct current magnetron sputtering was used to produce AlN{sub x}O{sub y} thin films, using an aluminum target, argon and a mixture of N{sub 2} + O{sub 2} (17:3) as reactive gases. The partial pressure of the reactive gas mixture was increased, maintaining the discharge current constant. Within the two identified regimes of the target (metallic and compound), four different tendencies for the deposition rate were found and a morphological evolution from columnar towards cauliflower-type, ending up as dense and featureless-type films. The structure was found to be Al-type (face centered cubic) and the structural characterization carried out by X-ray diffraction and transmission electron microscopy suggested the formation of an aluminum-based polycrystalline phase dispersed in an amorphous aluminum oxide/nitride (or oxynitride) matrix. This type of structure, composition, morphology and grain size, were found to be strongly correlated with the electrical response of the films, which showed a gradual transition between metallic-like responses towards semiconducting and even insulating-type behaviors. A group of films with high aluminum content revealed a sharp decrease of the temperature coefficient of resistance (TCR) as the concentration ratio of non-metallic/aluminum atomic ratio increased. Another group of samples, where the non-metallic content became more important, revealed a smooth transition between positive and negative values of TCR. In order to test whether the oxynitride films have a unique behavior or simply a transition between the typical responses of aluminum and of those of the correspondent nitride and oxide, the electrical properties of the ternary oxynitride system were compared with AlN{sub x} and AlO{sub y} systems, prepared in similar conditions. - Highlights: Black-Right-Pointing-Pointer AlN{sub x}O{sub y} thin films were produced using magnetron sputtering. Black-Right-Pointing-Pointer AlN{sub x}O{sub y} film morphology, composition and

  9. Modulation of electrical and optical properties of gallium-doped ZnO films by radio frequency magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    Liang Shuang; Mei Zeng-Xia; Du Xiao-Long

    2012-01-01

    Ga-doped ZnO (GZO) films are prepared on amorphous glass substrates at room temperature by radio frequency magnetron sputtering.The results reveal that the gallium doping efficiency,which will have an important influence on the electrical and optical properties of the film,can be governed greatly by the deposition pressure and film thickness.The position shifts of the ZnO (002) peaks in X-ray diffraction (XRD) measurements and the varied Hall mobility and carrier concentration confirms this result.The low Hall mobility is attributed to the grain boundary barrier scattering.The estimated height of barrier decreases with the increase of carrier concentration,and the trapping state density is nearly constant.According to defect formation energies and relevant chemical reactions,the photoluminescence (PL)peaks at 2.46 eV and 3.07 eV are attributed to oxygen vacancies and zinc vacancies,respectively.The substitution of more Ga atoms for Zn vacancies with the increase in film thickness is also confirmed by the PL spectrum.The obvious blueshift of the optical bandgap with an increase of carrier concentration is explained well by the Burstein-Moss (BM)effect.The bandgap difference between 3.18 eV and 3.37 eV,about 0.2 eV,is attributed to the metal-semiconductor transition.

  10. Growth mode and texture development in TiN films during magnetron sputtering - An in situ synchrotron radiation study

    CERN Document Server

    Schell, N; Matz, W; Chevallier, J

    2003-01-01

    For the materials research experimental station of the Rossendorf beamline ROBL at the European Synchrotron Radiation Facility in Grenoble, France, a two magnetron sputter deposition chamber for in situ study of film growth by synchrotron X-ray diffraction and reflectivity was developed. It allows high-quality depositions of compound films and multilayers. Heteroepitaxial layer-by-layer growth of TiN on single crystal MgO(0 0 1) was observed by real-time specular X-ray reflectivity showing characteristic oscillations. The pseudomorphic growth was confirmed by high-resolution TEM micrographs. During growth on amorphous SiO sub 2 on Si(0 0 1) substrates, the microstructural development of TiN films was studied in situ as a function of film thickness. With the deposition parameters chosen, a crossover was observed: grains with a (0 0 2) plane parallel to the film surface dominate at small thicknesses, while, at larger thicknesses, (1 1 1) grains dominate. Recrystallisation was identified as a mechanism that cont...

  11. Effect of duty cycle on the electrical and optical properties of VOx film deposited by pulsed reactive magnetron sputtering

    Science.gov (United States)

    Dong, Xiang; Wu, Zhiming; Xu, Xiangdong; Wei, Xiongbang; Jiang, Yadong

    2013-12-01

    Vanadium oxide (VOx) films were deposited onto well cleaned glass substrates by bipolar pulsed reactive magnetron sputtering at room temperature. Dependence of the structure, composition, optical and electrical properties of the films on the pulsed power's duty cycle has been investigated. The results from the X-ray diffraction (XRD) analysis show that there was no remarkable change in the amorphous structure in the films with duty cycle can be observed. But chemical analysis of the surface evaluated with x-ray photoelectron spectroscopy (XPS) indicates that decrease the duty cycle favors to enhance the oxidation of the vanadium. The optical and electrical properties of the films were characterized by spectroscopic ellipsometry and temperature dependent resistivity measurements, respectively. The evolution of the transmittance, optical band gap, optical constants, resistivity and temperature coefficient of resistance (TCR) of the deposited films with duty cycle was analyzed and discussed. In comparison with conventional DC sputtering, under the same discharge atmosphere and power level, these parameters of the VOx films can be modified over a broad range by duty cycle. Therefore adjusting the duty cycle during deposition, which is an effective way to control and optimize the performances of the VOx film for various optoelectronic devices applications.

  12. Effect of annealing on the mechanical and scratch properties of BCN films obtained by magnetron sputtering deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Shuyan, E-mail: xsynefu@126.com [Key Laboratory of Forest Sustainable Management and Environmental Microorganism Engineering of Heilongjiang Province, Northeast Forestry University, Harbin 150040 (China); Ma, Xinxin [School of Material Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Wen, Huiying [Key Laboratory of Forest Sustainable Management and Environmental Microorganism Engineering of Heilongjiang Province, Northeast Forestry University, Harbin 150040 (China); Tang, Guangze [School of Material Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Li, Chunwei [Key Laboratory of Forest Sustainable Management and Environmental Microorganism Engineering of Heilongjiang Province, Northeast Forestry University, Harbin 150040 (China)

    2014-09-15

    Highlights: • The amorphous BCN films were annealed at different temperatures under vacuum condition. • The order degree increases with the annealing temperature increasing, and the films do not decompose even the annealing temperature rise to 1000 °C. • The nano-hardness and modulus of the films decrease with the increasing of annealing temperatures. • The critical load of BCN films is not affected by the annealing temperature, and the films have good interfacial adhesion. • The scratch resistance properties of BCN film are improved by annealing at 600 °C. - Abstract: Boron-carbon-nitride (BCN) films have been fabricated by direct current unbalanced magnetron sputtering. Boron carbide/graphite compound and a mixture of nitrogen and argon are used as target and carrier gas, respectively, during BCN synthesis. The obtained BCN films are annealed at different temperatures under vacuum condition. The effect of annealing temperature on the structure, mechanical properties and scratch behavior of the BCN films has been investigated. The results indicate that no decomposition products are found even the BCN films are annealed at 1000 °C. The hardness and elastic modulus of the films decrease with the increase of annealing temperatures. The BCN film annealed at 600 °C has the strongest scratch resistance. The friction coefficient of all BCN films is in range of 0.05 to 0.15.

  13. Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures.

    Science.gov (United States)

    Khomenkova, L; Lehninger, D; Kondratenko, O; Ponomaryov, S; Gudymenko, O; Tsybrii, Z; Yukhymchuk, V; Kladko, V; von Borany, J; Heitmann, J

    2017-12-01

    Ge-rich ZrO2 films, fabricated by confocal RF magnetron sputtering of pure Ge and ZrO2 targets in Ar plasma, were studied by multi-angle laser ellipsometry, Raman scattering, Auger electron spectroscopy, Fourier transform infrared spectroscopy, and X-ray diffraction for varied deposition conditions and annealing treatments. It was found that as-deposited films are homogeneous for all Ge contents, thermal treatment stimulated a phase separation and a formation of crystalline Ge and ZrO2. The "start point" of this process is in the range of 640-700 °C depending on the Ge content. The higher the Ge content, the lower is the temperature necessary for phase separation, nucleation of Ge nanoclusters, and crystallization. Along with this, the crystallization temperature of the tetragonal ZrO2 exceeds that of the Ge phase, which results in the formation of Ge crystallites in an amorphous ZrO2 matrix. The mechanism of phase separation is discussed in detail.

  14. MoOx thin films deposited by magnetron sputtering as an anode for aqueous micro-supercapacitors

    Directory of Open Access Journals (Sweden)

    Can Liu

    2013-11-01

    Full Text Available In order to examine the potential application of non-stoichiometric molybdenum oxide as anode materials for aqueous micro-supercapacitors, conductive MoOx films (2 ≤ x ≤ 2.3 deposited via RF magnetron sputtering at different temperatures were systematically studied for composition, structure and electrochemical properties in an aqueous solution of Li2SO4. The MoOx (x ≈ 2.3 film deposited at 150 °C exhibited a higher areal capacitance (31 mF cm−2 measured at 5 mV s−1, best rate capability and excellent stability at potentials below −0.1 V versus saturated calomel electrode, compared to the films deposited at room temperature and at higher temperatures. These superior properties were attributed to the multi-valence composition and mixed-phase microstructure, i.e., the coexistence of MoO2 nanocrystals and amorphous MoOx (2.3 < x ≤ 3. A mechanism combining Mo(IV oxidation/reduction on the hydrated MoO2 grain surfaces and cation intercalation/extrusion is proposed to illustrate the pseudo-capacitive process.

  15. Role of nitrogen in the formation of hard and elastic CNx thin films by reactive magnetron sputtering

    Science.gov (United States)

    Hellgren, Niklas; Johansson, Mats P.; Broitman, Esteban; Hultman, Lars; Sundgren, Jan-Eric

    1999-02-01

    Carbon nitride films, deposited by reactive dc magnetron sputtering in Ar/N2 discharges, were studied with respect to composition, structure, and mechanical properties. CNx films, with 0<=x<=0.35, were grown onto Si (001) substrates at temperatures between 100 and 550 °C. The total pressure was kept constant at 3.0 mTorr with the N2 fraction varied from 0 to 1. As-deposited films were studied by Rutherford-backscattering spectroscopy, x-ray photoelectron spectroscopy, electron-energy loss spectroscopy, Raman and Fourier transform infrared spectroscopy, and nanoindentation. Three characteristic film structures could be identified: For temperatures below ~150 °C, an amorphous phase forms, the properties of which are essentially unaffected by the nitrogen concentration. For temperatures above ~200 °C, a transition from a graphitelike phase to a ``fullerenelike'' phase is observed when the nitrogen concentration increases from ~5 to ~15 at. %. This fullerenelike phase exhibits high hardness values and extreme elasticity, as measured by nanoindentation. A ``defected-graphite'' model, where nitrogen atoms goes into substitutional graphite sites, is suggested for explaining this structural transformation. When a sufficient number of nitrogen atoms is incorporated, formation of pentagons is promoted, leading to curving of the basal planes. This facilitates cross-linking between the planes and a distortion of the graphitic structure, and a strong three-dimensional covalently bonded network is formed.

  16. Electrical and optical properties of CNx(0<=x<=0.25) films deposited by reactive magnetron sputtering

    Science.gov (United States)

    Broitman, E.; Hellgren, N.; Järrendahl, K.; Johansson, M. P.; Olafsson, S.; Radnóczi, G.; Sundgren, J.-E.; Hultman, L.

    2001-01-01

    The electrical and optical properties of carbon-nitride CNx films (0⩽x⩽0.25) deposited by unbalanced reactive magnetron sputtering from a graphite target in mixed Ar/N2 discharges at a substrate temperature of 350 °C have been investigated. Pure C films exhibit a dark conductivity at room temperature of 25 Ω-1 cm-1, which grows up to 250 Ω-1 cm-1 for CNx films with N content of 20%. For CNx films, temperature-dependent conductivity measurements suggest that two electron conduction processes exist in the investigated temperature range 130amorphous to a fullerene-like microstructure consisting of curved, frequently intersecting, and highly in-plane oriented basal lattice planes.

  17. Epitaxial growth of ZnO thin films on AlN substrates deposited at low temperature by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Rahmane, S.; Soussou, A.; Gautron, E.; Jouan, P.Y.; Le Brizoual, L.; Barreau, N.; Djouadi, M.A. [Institut des Materiaux Jean Rouxel -IMN-, UMR CNRS 6502, Nantes (France); Abdallah, B. [Institut des Materiaux Jean Rouxel -IMN-, UMR CNRS 6502, Nantes (France); Atomic Energy Commission Syrian (AECS), Damascus (Syria); Soltani, A. [IEMN, UMR CNRS 8520, USTL, Villeneuve d' Ascq (France)

    2010-07-15

    Hexagonal aluminium nitride (AlN) and zinc oxide (ZnO) thin films have been deposited by DC and RF reactive magnetron sputtering at room temperature. For a first set of samples, sputtered AlN films were deposited on silicon ZnO substrate. For a second set, ZnO films were deposited on AlN substrate. X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM) analysis of the synthesized AlN film on ZnO buffer layer have shown some amorphous zones close to the interface followed by a nanocrystalline layer exhibiting (10-10) and (0002) orientations of the hexagonal AlN crystalline phase. At the top of the film, a relatively well-crystallized layer with a single (0002) orientation has been observed. We have related the relatively bad interface to the presence of oxygen coming from ZnO substrate. This behaviour was different for the growth of ZnO film when AlN was used as substrate. In fact, we have observed thanks to HRTEM images and selected area electron diffraction patterns, that the ZnO film deposited on AlN substrate exhibits an epitaxial growth which is strongly dependent on the crystalline quality of AlN film. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  18. Substrate temperature effect on the SiC passivation layer synthesized by an RF magnetron sputtering method

    Energy Technology Data Exchange (ETDEWEB)

    Seo, Jae Keun; Joung, Yeun-Ho [School of Electrical Engineering, Hanbat National University, Daejeon 305-719 (Korea, Republic of); Park, Young [Korea Railroad Research Institute, Uiwang 437-757 (Korea, Republic of); Choi, Won Seok, E-mail: wschoi@hanbat.ac.kr [School of Electrical Engineering, Hanbat National University, Daejeon 305-719 (Korea, Republic of)

    2011-08-01

    This paper describes amorphous silicon carbide (a-SiC) film as an alternative material to silicon nitride (SiN) and silicon oxide (SiO{sub 2}) for the passivation layer of solar cells. We deposited the film on p-type silicon (100) wafers and glass substrates by RF magnetron sputtering using a SiC (99%) target. Structural and optical properties of the films were investigated according to the process temperature (room temperature, 300 deg. C, 400 deg. C, 500 deg. C and 600 deg. C). The structural properties were analyzed by Raman microscopy and XPS (X-ray Photoelectron Spectroscopy). The XPS showed that the content of SiC in the film is increased when the substrate temperature is higher. The optical properties of the films were examined by UV-visible spectroscopy and Ellipsometer. The optical characteristic measurement showed that the lowest refractive index of the film is 2.65. Also, using carrier lifetime measurement, we investigated the performance of SiC as the passivation layer. At the substrate temperature of 600 deg. C, we obtained a highest carrier lifetime of 7.5 {mu}s.

  19. Selective-resputtering-induced perpendicular magnetic anisotropy in amorphous TbFe films.

    Science.gov (United States)

    Harris, V G; Pokhil, T

    2001-08-06

    Perpendicular magnetic anisotropy energy in rf magnetron sputtered amorphous TbFe films is measured to increase exponentially with pair-order anisotropy induced by the selective resputtering of surface adatoms during film growth.

  20. Optical Properties of ZnFe2O4-SiO2 Granular Films Prepared by Radio-Frequency Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    晋云霞; 李广海; 张云霞; 张立德

    2002-01-01

    We report on the optical properties of ZnFe2O4-SiO2 granular films prepared on quartz substrates by the radio-frequency magnetron sputtering method. Post-annealing was performed at different temperatures under flow oxygen atmosphere. The morphology and structures of ZnFe2 O4 nanoparticles were characterized by x-ray diffraction, transmission electron microscopy and optical absorption spectra. It has been found that there are two different line types in the optical absorption curves of ZnFe2 O4-SiO2 granular films. The critical transition of line types occurs when ZnFe2O4 changes from amorphous to crystalline, and the transition temperature increases with the increasing content of ZnFe2O4. There is an obvious blueshift of the optical absorption edge of the granular films with the decreasing annealing temperature.

  1. Design and capabilities of an experimental setup based on magnetron sputtering for formation and deposition of size-selected metal clusters on ultra-clean surfaces

    Science.gov (United States)

    Hartmann, H.; Popok, V. N.; Barke, I.; von Oeynhausen, V.; Meiwes-Broer, K.-H.

    2012-07-01

    The design and performance of an experimental setup utilizing a magnetron sputtering source for production of beams of ionized size-selected clusters for deposition in ultra-high vacuum is described. For the case of copper cluster formation the influence of different source parameters is studied and analyzed. Size-selected clusters are deposited on substrates and the efficiency of an electrostatic quadrupole mass selector is tested. Height analysis using atomic force microscopy (AFM) demonstrates relative standard size deviations of 7%-10% for the particles of various sizes between 6 nm and 19 nm. Combined analysis by AFM and transmission electron microscopy reveals that the clusters preserve almost spherical shape after the deposition on amorphous carbon substrates. Supported nanoparticles of a few nanometres in diameter have crystalline structure with a face-centered cubic (fcc) lattice.

  2. Deposition and characterization of TaAIN thin films by reactive magnetron sputtering; Deposicao e caracterizacao de filmes finos de TaAIN depositados por magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, G.B.; Fernandez, D.R.; Fontes Junior, A.S.; Felix, L.C.; Tentardini, E.K. [Universidade Federal de Sergipe (UFS), Sao Cristovao, SE (Brazil). Departamento de Ciencia e Engenharia de Materiais; Hubler, R. [Pontificia Universidade Catolica do Rio Grande do Sul (PUC-RS), RS (Brazil); Silva Junior, A.H. da, E-mail: brito-g@hotmail.com [Universidade Federal do Rio Grande do Sul (UFRGS), RS (Brazil)

    2016-07-01

    Phase stability, oxidation resistance and great mechanical properties are the main objectives when synthesizing protective coatings. The tantalum nitride (TaN) has aroused interest because of its high temperature stability, chemical inertness and thermal conductivity. However, it has a low hardness value when compared to other coatings. Researches has shown that one way to improvements in the properties of a thin film is by adding other elements in the deposition process. Therefore, the objective of this study was to deposit thin films of TaAlN by magnetron sputtering, changing the aluminum concentration of 2, 5, 7, to 14%. Then the coatings were characterized by EDS, RBS, GIXRD and nanohardness. In this study was found that the aluminum deposited did not change the oxidation resistance of the coating, and the highest value of hardness was 28 GPa for the sample with 14 at.%. (author)

  3. Reactive sputtering of δ-ZrH{sub 2} thin films by high power impulse magnetron sputtering and direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Högberg, Hans, E-mail: hans.hogberg@liu.se; Tengdelius, Lina; Eriksson, Fredrik; Broitman, Esteban; Lu, Jun; Jensen, Jens; Hultman, Lars [Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden); Samuelsson, Mattias [Impact Coatings AB, Westmansgatan 29, SE-582 16 Linköping (Sweden)

    2014-07-01

    Reactive sputtering by high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) of a Zr target in Ar/H{sub 2} plasmas was employed to deposit Zr-H films on Si(100) substrates, and with H content up to 61 at. % and O contents typically below 0.2 at. % as determined by elastic recoil detection analysis. X-ray photoelectron spectroscopy reveals a chemical shift of ∼0.7 eV to higher binding energies for the Zr-H films compared to pure Zr films, consistent with a charge transfer from Zr to H in a zirconium hydride. X-ray diffraction shows that the films are single-phase δ-ZrH{sub 2} (CaF{sub 2} type structure) at H content >∼55 at. % and pole figure measurements give a 111 preferred orientation for these films. Scanning electron microscopy cross-section images show a glasslike microstructure for the HiPIMS films, while the DCMS films are columnar. Nanoindentation yield hardness values of 5.5–7 GPa for the δ-ZrH{sub 2} films that is slightly harder than the ∼5 GPa determined for Zr films and with coefficients of friction in the range of 0.12–0.18 to compare with the range of 0.4–0.6 obtained for Zr films. Wear resistance testing show that phase-pure δ-ZrH{sub 2} films deposited by HiPIMS exhibit up to 50 times lower wear rate compared to those containing a secondary Zr phase. Four-point probe measurements give resistivity values in the range of ∼100–120 μΩ cm for the δ-ZrH{sub 2} films, which is slightly higher compared to Zr films with values in the range 70–80 μΩ cm.

  4. Optical parameters induced by phase transformation in RF magnetron sputtered TiO2 nanostructured thin films

    Directory of Open Access Journals (Sweden)

    Prabitha B. Nair

    2014-06-01

    Full Text Available Pure TiO2 thin films were deposited onto quartz substrates using a ceramic TiO2 target at an elevated substrate temperature of 573 K by RF magnetron sputtering, and an analysis of structural, optical and photoluminescence characteristics of the films upon phase transformation is reported in this paper. Structural investigations using X-ray diffraction revealed that the as-deposited film was amorphous in nature. Thermal annealing for 2 h at 873 K in air resulted in the formation of anatase phase, and a phase transformation to rutile was observed at 1073 K. An increase in grain size and an improvement in crystallinity were also observed on annealing. Rod- like rutile crystallites were observed in the SEM images of the film annealed at 1273 K. As-deposited films and films annealed up to 1073 K were highly transparent in the visible region with a transparency >80%. Optical band gap of the films decreased upon thermal annealing which is attributed to phase transformation from amorphous to anatase and then to rutile. Optical parameters such as refractive index, optical conductivity and optical dielectric constant increased with increase in annealing temperature. Since rutile is the optically active phase, the superior refractive index of the film annealed at 1073 K along with its high transparency in visible region suggests the application of this film in antireflective coatings. Photoluminescence emission of maximum intensity was observed for the film annealed at 873 K, which exhibits anatase phase. Intense blue emission observed in this film makes it suitable for use in optoelectronic display devices.

  5. Optical parameters induced by phase transformation in RF magnetron sputtered TiO2 nanostructured thin films

    Institute of Scientific and Technical Information of China (English)

    Prabitha B.Nair; V.B.Justinvictor; Georgi P.Daniel; K.Joy; K.C.James Raju; David Devraj Kumar; P.V.Thomas

    2014-01-01

    Pure TiO2 thin films were deposited onto quartz substrates using a ceramic TiO2 target at an elevated substrate temperature of 573 K by RF magnetron sputtering, and an analysis of structural, optical and photoluminescence characteristics of the films upon phase transformation is reported in this paper. Structural investigations using X-ray diffraction revealed that the as-deposited film was amorphous in nature. Thermal annealing for 2 h at 873 K in air resulted in the formation of anatase phase, and a phase transformation to rutile was observed at 1073 K. An increase in grain size and an improvement in crystallinity were also observed on annealing. Rod-like rutile crystallites were observed in the SEM images of the film annealed at 1273 K. As-deposited films and films annealed up to 1073 K were highly transparent in the visible region with a transparency 4 80%. Optical band gap of the films decreased upon thermal annealing which is attributed to phase transformation from amorphous to anatase and then to rutile. Optical parameters such as refractive index, optical conductivity and optical dielectric constant increased with increase in annealing temperature. Since rutile is the optically active phase, the superior refractive index of the film annealed at 1073 K along with its high transparency in visible region suggests the application of this film in antireflective coatings. Photoluminescence emission of maximum intensity was observed for the film annealed at 873 K, which exhibits anatase phase. Intense blue emission observed in this film makes it suitable for use in optoelectronic display devices.

  6. Hydroxyapatite formation on biomedical Ti–Ta–Zr alloys by magnetron sputtering and electrochemical deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyun-Ju [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, and Research Center for Oral Disease Regulation of the Aged, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Jeong, Yong-Hoon [Biomechanics and Tissue Engineering Laboratory, Division of Orthodontics, College of Dentistry, The Ohio State University, Columbus, OH (United States); Choe, Han-Cheol, E-mail: hcchoe@chosun.ac.kr [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, and Research Center for Oral Disease Regulation of the Aged, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Brantley, William A. [Division of Prosthodontics and Restorative Science, College of Dentistry, The Ohio State University, Columbus, OH (United States)

    2014-12-01

    The purpose of this study was to investigate hydroxyapatite formation on Ti-25Ta-xZr titanium alloys resulting from radio-frequency magnetron sputtering and electrochemical deposition. Electrochemical deposition of hydroxyapatite (HA) was first carried out using a cyclic voltammetry (CV) method at 80 °C in 5 mM Ca (NO{sub 3}){sub 2} + 3 mM NH{sub 4}H{sub 2}PO{sub 4}. Then a physical vapor deposition (PVD) coating was obtained by a radio-frequency (RF) magnetron sputtering technique. The microstructures, phase transformations, and morphologies of the hydroxyapatite films deposited on the titanium alloys were analyzed by optical microscopy (OM), X-ray diffractometer (XRD), energy dispersive X-ray spectroscopy (EDS) and field-emission scanning electron microscopy (FE-SEM). The morphologies of electrochemically deposited HA showed plate-like shapes on the titanium alloys, and the morphologies of the RF-sputtered HA coating had the appearance droplet particles on the plate-like precipitates that had formed by electrochemical deposition. For the RF-sputtered HA coatings, the Ca/P ratio was increased, compared to that for the electrochemically deposited HA surface. Moreover, the RF-sputtered HA coating, consisting of agglomerated droplet particles on the electrochemically deposited HA surface, had better wettability compared to the bulk titanium alloy surface. - Highlights: • Hydroxyapatite (HA) was deposited on Ti–Ta–Zr alloys by radio-frequency (RF) magnetron sputtering and a cyclic voltammetry. • The morphologies of the RF-sputtered HA coating on electrochemical deposits presented plate-like shapes with a droplet particle. • The Ca/P ratio for RF-sputtered HA coatings was greater than that for electrochemical deposited HA coatings. • The RF-sputtered and electrochemical HA coatings had superior wettability compared to the electrochemically deposited coatings.

  7. Tailoring of antibacterial Ag nanostructures on TiO2 nanotube layers by magnetron sputtering.

    Science.gov (United States)

    Uhm, Soo-Hyuk; Song, Doo-Hoon; Kwon, Jae-Sung; Lee, Sang-Bae; Han, Jeon-Geon; Kim, Kyoung-Nam

    2014-04-01

    To reduce the incidence of postsurgical bacterial infection that may cause implantation failure at the implant-bone interface, surface treatment of titanium implants with antibiotic materials such as silver (Ag) has been proposed. The purpose of this work was to create TiO2 nanotubes using plasma electrolytic oxidation (PEO), followed by formation of an antibacterial Ag nanostructure coating on the TiO2 nanotube layer using a magnetron sputtering system. PEO was performed on commercially pure Ti sheets. The Ag nanostructure was added onto the resulting TiO2 nanotube using magnetron sputtering at varying deposition rates. Field emission scanning electron microscopy and transmission electron microscopy were used to characterize the surface, and Ag content on the TiO2 nanotube layer was analyzed by X-ray diffraction and X-ray photoelectron spectroscopy. Scanning probe microscopy for surface roughness and contact angle measurement were used to indirectly confirm enhanced TiO2 nanotube hydrophilicity. Antibacterial activity of Ag ions in solution was determined by inductively coupled plasma mass spectrometry and antibacterial testing against Staphylococcus aureus (S. aureus). In vitro, TiO2 nanotubes coated with sputtered Ag resulted in significantly reduced S. aureus. Cell viability assays showed no toxicity for the lowest sputtering time group in the osteoblastic cell line MC3T3-E1. These results suggest that a multinanostructured layer with a biocompatible TiO2 nanotube and antimicrobial Ag coating is a promising biomaterial that can be tailored with magnetron sputtering for optimal performance.

  8. Dielectric properties of tetragonal tungsten bronze films deposited by RF magnetron sputtering

    OpenAIRE

    Bodeux, Romain; Michau, Dominique; Josse, Michaël; Maglione, Mario

    2014-01-01

    International audience; Tetragonal tungsten bronze (TTB) films have been synthesised on Pt(111)/TiO2/SiO2/Si substrates from Ba2LnFeNb4O15 ceramics (Ln = La, Nd, Eu) by RF magnetron sputtering. X-ray diffraction measurements evidenced the multi-oriented nature of films with some degrees of preferential orientation along (111). The dependence of the dielectric properties on temperature and frequency has been investigated. The dielectric properties of the films are similar to those of the bulk,...

  9. Surface passivation of gallium nitride by ultrathin RF-magnetron sputtered Al2O3 gate.

    Science.gov (United States)

    Quah, Hock Jin; Cheong, Kuan Yew

    2013-08-14

    An ultrathin RF-magnetron sputtered Al2O3 gate on GaN subjected to postdeposition annealing at 800 °C in O2 ambient was systematically investigated. A cross-sectional energy-filtered transmission electron microscopy revealed formation of crystalline Al2O3 gate, which was supported by X-ray diffraction analysis. Various current conduction mechanisms contributing to leakage current of the investigated sample were discussed and correlated with metal-oxide-semiconductor characteristics of this sample.

  10. Magnetron sputtered gadolinia-doped ceria diffusion barriers for metal-supported solid oxide fuel cells

    DEFF Research Database (Denmark)

    Sønderby, Steffen; Klemensø, Trine; Christensen, Bjarke H.

    2014-01-01

    Gadolinia-doped ceria (GDC) thin films are deposited by reactive magnetron sputtering in an industrial-scale setup and implemented as barrier layers between the cathode and electrolyte in metal-based solid oxide fuel cells consisting of a metal support, an electrolyte of ZrO2 co-doped with Sc2O3...... and substrate bias voltage. A GDC layer thickness of 0.6 μm is found to effectively block Sr diffusion when bias voltage and deposition temperature is tuned to promote dense coatings. The adatom mobility has a large influence on the film density. Low temperature and bias voltage result in underdense column...

  11. R.F. magnetron sputtering of multilayered c-BN films on cemented carbide tool.

    Science.gov (United States)

    Park, Sungtae; Jeong, Sehoon; Lee, Kwangmin

    2011-02-01

    A c-BN thin film was deposited using a B4C target in a r.f. magnetron sputtering system. The c-BN layer was coated with a TiAIN adhesion layer (approximately 2 microm), boron carbide (approximately 1 microm) and BCN (10 approximately 15 nm) nano-gradient layer system. The c-BN layers with thicknesses of more than 0.5 microm were successfully deposited onto cemented carbide substrates. The high resolution XPS spectra analysis of B1s and N1s revealed that the c-BN film was mainly composed of sp3 BN bonds.

  12. Ground state atomic oxygen in high-power impulse magnetron sputtering: a quantitative study

    Science.gov (United States)

    Britun, Nikolay; Belosludtsev, Alexandr; Silva, Tiago; Snyders, Rony

    2017-02-01

    The ground state density of oxygen atoms in reactive high-power impulse magnetron sputtering discharges has been studied quantitatively. Both time-resolved and space-resolved measurements were conducted. The measurements were performed using two-photon absorption laser-induced fluorescence (TALIF), and calibrated by optical emission actinometry with multiple Ar emission lines. The results clarify the dynamics of the O ground state atoms in the discharge afterglow significantly, including their propagation and fast decay after the plasma pulse, as well as the influence of gas pressure, O2 admixture, etc.

  13. RP and RQA Analysis for Floating Potential Fluctuations in a DC Magnetron Sputtering Plasma

    Science.gov (United States)

    Sabavath, Gopikishan; Banerjee, I.; Mahapatra, S. K.

    2016-04-01

    The nonlinear dynamics of a direct current magnetron sputtering plasma is visualized using recurrence plot (RP) technique. RP comprises the recurrence quantification analysis (RQA) which is an efficient method to observe critical regime transitions in dynamics. Further, RQA provides insight information about the system’s behavior. We observed the floating potential fluctuations of the plasma as a function of discharge voltage by using Langmuir probe. The system exhibits quasi-periodic-chaotic-quasi-periodic-chaotic transitions. These transitions are quantified from determinism, Lmax, and entropy of RQA. Statistical investigations like kurtosis and skewness also studied for these transitions which are in well agreement with RQA results.

  14. Determination of the deposition rate of DC magnetron sputtering in fabrication of X-ray supermirrors

    Institute of Scientific and Technical Information of China (English)

    Fengli Wang; Zhanshan Wang; Jingtao Zhu; Zhong Zhang; Wenjuan Wu; Shumin Zhang; Lingyan Chen

    2006-01-01

    @@ X-ray supermirror is a non-periodic multilayer structure,whose optical performance is greatly affected by the stability and accuracy of the deposition rate in the fabrication using the direct current (DC) magnetron sputtering.By considering the location-setting time of the substrate positioning above the sputtering target,the deposition rate can be accurately determined.Experimental results show that the optical performance of the supermirror is in agreement with the design aim,which indicates that the layer thickness is well controlled and coincides with the desired ones.

  15. Venting temperature determines surface chemistry of magnetron sputtered TiN films

    Science.gov (United States)

    Greczynski, G.; Mráz, S.; Hultman, L.; Schneider, J. M.

    2016-01-01

    Surface properties of refractory ceramic transition metal nitride thin films grown by magnetron sputtering are essential for resistance towards oxidation necessary in all modern applications. Here, typically neglected factors, including exposure to residual process gases following the growth and the venting temperature Tv, each affecting the surface chemistry, are addressed. It is demonstrated for the TiN model materials system that Tv has a substantial effect on the composition and thickness-evolution of the reacted surface layer and should therefore be reported. The phenomena are also shown to have impact on the reliable surface characterization by x-ray photoelectron spectroscopy.

  16. Temperature-driven spin reorientation transition of magnetron sputtered nickel thin film

    Institute of Scientific and Technical Information of China (English)

    Song Xiao-Hui; Zhang Dian-Lin

    2008-01-01

    The temperature-driven spin reorientation transition of magnetron sputtered Ni/Si(111)systems has been studied.The relationship between ac initial susceptibility and temperature of nickel films with different thicknesses shows that the magnetization orientation changes from in-plane to out-of-plane with the increase of temperature.The temperature dependence of magnetoelastic,magneto-crystalline,and magnetostatic anisotropies determines the direction of the reorientation transition.The temperature-driven spin reorientation transition is supported by Hall coefficient measurements which show that its temperature dependence is similar to that of susceptibility.

  17. Microstructure of titanium nitride thin films controlled by ion bombardment in a magnetron-sputtering device

    Energy Technology Data Exchange (ETDEWEB)

    Cerny, R. (Karlova Univ., Prague (Czech Republic). Fakulta Matematicko-Fyzikalni); Kuzel, R. Jr. (Karlova Univ., Prague (Czech Republic). Fakulta Matematicko-Fyzikalni); Valvoda, V. (Karlova Univ., Prague (Czech Republic). Fakulta Matematicko-Fyzikalni); Kadlec, S. (Czechoslovak Academy of Sciences, Prague (Czechoslovakia). Inst. of Physics); Musil, J. (Czechoslovak Academy of Sciences, Prague (Czechoslovakia). Inst. of Physics)

    1994-05-01

    The structure of titanium nitride thin films deposited by unbalanced magnetron sputtering on high chromium steel substrates was studied by X-ray diffraction. In order to characterize relations between the microstructure of sputtered TiN films and the deposition conditions, the parameter E[sub p] was introduced as the average energy transmitted from bombarding particles (ions, electrons, neutrals, photons) to one condensing particle of the film. A transition from a porous to a compact microstructure was found with increasing E[sub p]. The possible inhomogeneity of titanium nitride films is discussed. (orig.)

  18. Preparation and structural properties of thin carbon films by very-high-frequency magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    高明伟; 叶超; 王响英; 何一松; 郭佳敏; 杨培芳

    2016-01-01

    Growth and structural properties of thin a-C films prepared by the 60 MHz very-high-frequency (VHF) magnetron sputtering were investigated. The energy and flux of ions impinging the substrate were also analyzed. It is found that the thin a-C films prepared by the 60 MHz sputtering have a lower growth rate, a smooth surface, and more sp3 contents. These features are related to the higher ion energy and the lower ions flux onto the substrate. Therefore, the 60 MHz VHF sputtering is more suitable for the preparation of thin a-C film with more sp3 contents.

  19. Surface functionalization of nanostructured LaB6-coated Poly Trilobal fabric by magnetron sputtering

    Science.gov (United States)

    Wu, Yan; Zhang, Lin; Min, Guanghui; Yu, Huashun; Gao, Binghuan; Liu, Huihui; Xing, Shilong; Pang, Tao

    2016-10-01

    Nanostructured LaB6 films were deposited on flexible Poly Trilobal substrates (PET textiles) through direct current magnetron sputtering in order to broaden its applications and realize surface functionalization of polyester fabrics. Characterizations and performances were investigated by employing a scanning electron microscope (SEM), Fourier transformation infrared spectroscopy (FT-IR) and ultraviolet-visible (UV-vis) spectrophotometer. Ultraviolet Protection Factor (UPF) conducted by the integral conversion was employed to measure the ultraviolet protection ability. As expected, the growth of LaB6 film depending on the pressure variation enhanced UV-blocking ability (UPF rating at 30.17) and absorption intensity of the textiles.

  20. SnOx Thin Films Deposited by Reactive Magnetron Sputtering for Microbatteries Anodes

    Institute of Scientific and Technical Information of China (English)

    XING Guang-jian; YANG Zhi-min; SHEN Wan; MAO Chang-hui; DU Jun

    2004-01-01

    SnOx thin films, with various oxygen deficiencies, are deposited from a Sn target on to silicon substratesby reactive magnetron sputtering. The SnOx films are characterized by X-ray diffraction ( XRD ) and X-ray photoelectron spectroscopy(XPS). Influences of deposition conditions such as oxygen partial pressure and annealing temperature on the characteristicsof the films are discussed in detail. The high reversible capacity and cycle performance characteristics of SnOxare also described. The results show that stoichiometric parameter x increases with the increase in oxygen partial pressure. The chargedischarge performance of the SnOxfilms is found to be dependent on x value.

  1. Venting temperature determines surface chemistry of magnetron sputtered TiN films

    Energy Technology Data Exchange (ETDEWEB)

    Greczynski, G. [Thin Film Physics Division, Department of Physics (IFM), Linköping University, SE-581 83 Linköping (Sweden); Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, D-52074 Aachen (Germany); Mráz, S.; Schneider, J. M. [Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, D-52074 Aachen (Germany); Hultman, L. [Thin Film Physics Division, Department of Physics (IFM), Linköping University, SE-581 83 Linköping (Sweden)

    2016-01-25

    Surface properties of refractory ceramic transition metal nitride thin films grown by magnetron sputtering are essential for resistance towards oxidation necessary in all modern applications. Here, typically neglected factors, including exposure to residual process gases following the growth and the venting temperature T{sub v}, each affecting the surface chemistry, are addressed. It is demonstrated for the TiN model materials system that T{sub v} has a substantial effect on the composition and thickness-evolution of the reacted surface layer and should therefore be reported. The phenomena are also shown to have impact on the reliable surface characterization by x-ray photoelectron spectroscopy.

  2. Structural, electrical, and optical properties of diamondlike carbon films deposited by dc magnetron sputtering

    Science.gov (United States)

    Broitman, E.; Lindquist, O. P. A.; Hellgren, N.; Hultman, L.; Holloway, B. C.

    2003-11-01

    The electrical and optical properties of diamondlike carbon films deposited by direct current magnetron sputtering on Si substrates at room temperature have been measured as a function of the ion energy (Eion) and ion-to-carbon flux (Jion/JC). The results show that, in the ranges of 5 eV<=Eion<=85 eV and 1.1<=Jion/JC<=6.8, the presence of defective graphite formed by subplanted C and Ar atoms, voids, and the surface roughness, are the dominant influences on the resistivity and optical absorption.

  3. Spectroscopic imaging of self-organization in high power impulse magnetron sputtering plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Centre for Quantum Technologies, National University of Singapore, 3 Science Drive 2, 117543 Singapore, Singapore; Andersson, Joakim; Ni, Pavel; Anders, Andre

    2013-07-17

    Excitation and ionization conditions in traveling ionization zones of high power impulse magnetron sputtering plasmas were investigated using fast camera imaging through interference filters. The images, taken in end-on and side on views using light of selected gas and target atom and ion spectral lines, suggest that ionization zones are regions of enhanced densities of electrons, and excited atoms and ions. Excited atoms and ions of the target material (Al) are strongly concentrated near the target surface. Images from the highest excitation energies exhibit the most localized regions, suggesting localized Ohmic heating consistent with double layer formation.

  4. Evidence for breathing modes in direct current, pulsed, and high power impulse magnetron sputtering plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Yuchen [State Key Lab for Materials Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States); Zhou, Xue [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States); Department of Electrical Engineering, Harbin Institute of Technology, Harbin 150000 (China); Liu, Jason X. [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States); Department of Physics, University of California, Berkeley, Berkeley, California 94720 (United States); Anders, André, E-mail: aanders@lbl.gov [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States)

    2016-01-18

    We present evidence for breathing modes in magnetron sputtering plasmas: periodic axial variations of plasma parameters with characteristic frequencies between 10 and 100 kHz. A set of azimuthally distributed probes shows synchronous oscillations of the floating potential. They appear most clearly when considering the intermediate current regime in which the direction of azimuthal spoke motion changes. Breathing oscillations were found to be superimposed on azimuthal spoke motion. Depending on pressure and current, one can also find a regime of chaotic fluctuations and one of stable discharges, the latter at high current. A pressure-current phase diagram for the different situations is proposed.

  5. Magnetron sputtering cluster apparatus for formation and deposition of size-selected metal nanoparticles

    DEFF Research Database (Denmark)

    Hanif, Muhammad; Popok, Vladimir

    2015-01-01

    The experimental setup utilizing a DC magnetron sputtering source for production of metal clusters, their size (mass) selection and following deposition in high vacuum is described. The source is capable to form clusters of various metals, for example, copper, silver, gold etc. Cluster size...... selection is achieved using an electrostatic quadrupole mass selector. The deposited silver clusters are studied using atomic force microscopy. The height distributions show typical relative standard size deviation of 9-13% for given sizes in the range between 5-23 nm. Thus, the apparatus demonstrates good...

  6. Development of high-vacuum planar magnetron sputtering using an advanced magnetic field geometry

    Energy Technology Data Exchange (ETDEWEB)

    Ohno, Takahiro; Yagyu, Daisuke; Saito, Shigeru, E-mail: saito@ee.kagu.tus.ac.jp; Ohno, Yasunori; Itoh, Masatoshi; Uhara, Yoshio; Miura, Tsutomu [Department of Electrical Engineering, Faculty of Engineering, Tokyo University of Science, 6-3-1 Niijuku, Katsushika-ku, Tokyo 125-8585 (Japan); Nakano, Hirofumi [Ikazuti Ltd., 3-28-10 Kikunodai, Chofu, Tokyo 182-0007 (Japan)

    2015-11-15

    A permanent magnet in a new magnetic field geometry (namely, with the magnetization in the radial direction) was fabricated and used for high-vacuum planar magnetron sputtering using Penning discharge. Because of the development of this magnet, the discharge current and deposition rate were increased two to three times in comparison with the values attainable with a magnet in the conventional geometry. This improvement was because the available space for effective discharge of the energetic electrons for the ionization increased because the magnetic field distribution increased in both the axial and radial directions of discharge.

  7. DEPOSITION OF NIOBIUM AND OTHER SUPERCONDUCTING MATERIALS WITH HIGH POWER IMPULSE MAGNETRON SPUTTERING: CONCEPT AND FIRST RESULTS

    Energy Technology Data Exchange (ETDEWEB)

    High Current Electronics Institute, Tomsk, Russia; Anders, Andre; Mendelsberg, Rueben J.; Lim, Sunnie; Mentink, Matthijs; Slack, Jonathan L.; Wallig, Joseph G.; Nollau, Alexander V.; Yushkov, Georgy Yu.

    2011-07-24

    Niobium coatings on copper cavities have been considered as a cost-efficient replacement of bulk niobium RF cavities, however, coatings made by magnetron sputtering have not quite lived up to high expectations due to Q-slope and other issues. High power impulse magnetron sputtering (HIPIMS) is a promising emerging coatings technology which combines magnetron sputtering with a pulsed power approach. The magnetron is turned into a metal plasma source by using very high peak power density of ~ 1 kW/cm{sup 2}. In this contribution, the cavity coatings concept with HIPIMS is explained. A system with two cylindrical, movable magnetrons was set up with custom magnetrons small enough to be inserted into 1.3 GHz cavities. Preliminary data on niobium HIPIMS plasma and the resulting coatings are presented. The HIPIMS approach has the potential to be extended to film systems beyond niobium, including other superconducting materials and/or multilayer systems.

  8. Full System Model of Magnetron Sputter Chamber - Proof-of-Principle Study

    Energy Technology Data Exchange (ETDEWEB)

    Walton, C; Gilmer, G; Zepeda-Ruiz, L; Wemhoff, A; Barbee, T

    2007-05-04

    The lack of detailed knowledge of internal process conditions remains a key challenge in magnetron sputtering, both for chamber design and for process development. Fundamental information such as the pressure and temperature distribution of the sputter gas, and the energies and arrival angles of the sputtered atoms and other energetic species is often missing, or is only estimated from general formulas. However, open-source or low-cost tools are available for modeling most steps of the sputter process, which can give more accurate and complete data than textbook estimates, using only desktop computations. To get a better understanding of magnetron sputtering, we have collected existing models for the 5 major process steps: the input and distribution of the neutral background gas using Direct Simulation Monte Carlo (DSMC), dynamics of the plasma using Particle In Cell-Monte Carlo Collision (PIC-MCC), impact of ions on the target using molecular dynamics (MD), transport of sputtered atoms to the substrate using DSMC, and growth of the film using hybrid Kinetic Monte Carlo (KMC) and MD methods. Models have been tested against experimental measurements. For example, gas rarefaction as observed by Rossnagel and others has been reproduced, and it is associated with a local pressure increase of {approx}50% which may strongly influence film properties such as stress. Results on energies and arrival angles of sputtered atoms and reflected gas neutrals are applied to the Kinetic Monte Carlo simulation of film growth. Model results and applications to growth of dense Cu and Be films are presented.

  9. Characteristic comparison of metal films coated onto the cenosphere by chemical and magnetron sputtering methods

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Metal-coated cenospheres have been widely used in Industries. Different coating methods result in different characteristic metal films. Hie metal film on the cenosphere by chemical coating does not appear to be very smooth, exhibiting metal piled up and pin holes on the surface and leaving some spots uncoated. Meanwhile, the metal film is not tightly absorbed onto cenospheres and is easy to peel off. However, the metal film prepared by magnetron sputtering is compact, smooth and without pin holes. The film has good affinity to the cenosphere surface. Such films do not separate with it even when the cenosphere is crushed. Both the metal films give the same XRD patterns, indicating tnat the crystal structure of the metal films by these two methods is the same. Chemical coating is a complex process and harmful to the environment, but it fits ultrafine powder coating (the particle size can be less than 2 μm). The magnetron sputtering method is environmental friendly and works quickly, but this method requires specially designed equipment and does not work for ultrafine powders. If the particle size is less than 30 μm, the coating process is hard to carry on.

  10. Surface functionalization of nanostructured LaB{sub 6}-coated Poly Trilobal fabric by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Yan, E-mail: wuyanchn@hotmail.com [Mechanical and Electrical Engineering Branch, Jiaxing Nanyang Polytechnic Institute, Jiaxing 314003 (China); Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061 (China); Zhang, Lin, E-mail: zhanglin2007@sdu.edu.cn [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061 (China); Min, Guanghui, E-mail: ghmin@sdu.edu.cn [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061 (China); Yu, Huashun; Gao, Binghuan; Liu, Huihui; Xing, Shilong; Pang, Tao [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061 (China)

    2016-10-30

    Highlights: • Nanostructured LaB{sub 6} films were deposited on flexible textile substrates by dc magnetron sputtering. • The pronounced influence of the working pressure on the morphologies and optical properties of LaB{sub 6} films has been revealed. • The concept of Ultraviolet Protection Factor (UPF) was employed and LaB{sub 6}-coated PET textiles with ultraviolet protection ability were obtained. - Abstract: Nanostructured LaB{sub 6} films were deposited on flexible Poly Trilobal substrates (PET textiles) through direct current magnetron sputtering in order to broaden its applications and realize surface functionalization of polyester fabrics. Characterizations and performances were investigated by employing a scanning electron microscope (SEM), Fourier transformation infrared spectroscopy (FT-IR) and ultraviolet-visible (UV–vis) spectrophotometer. Ultraviolet Protection Factor (UPF) conducted by the integral conversion was employed to measure the ultraviolet protection ability. As expected, the growth of LaB{sub 6} film depending on the pressure variation enhanced UV-blocking ability (UPF rating at 30.17) and absorption intensity of the textiles.

  11. Coatings manufactured using magnetron sputtering technology to protect against infrared radiation for use in firefighter helmets

    Directory of Open Access Journals (Sweden)

    Fejdyś Marzena

    2016-09-01

    Full Text Available The aim of this study was to test the usefulness of magnetron sputtering technology to produce coatings on selected elements of a firefighter’s helmet to protect against infrared radiation (PN-EN 171 standard. The scope of research includes testing the deposition produced via magnetron sputtering of metallic and ceramic coatings on plastics, which are used to manufacture the components comprising the personal protection equipment used by firefighters. The UV-VIS, NIR used to research the permeation coefficients and reflections for light and infrared light and the emission spectrometry with ICP-AES used for the quantitative analysis of elements in metallic and ceramic coatings. Microstructural and micro-analytical testing of the coatings were performed using scanning electron microscopy (SEM. Measurements of the chemical compositions were conducted using energy-dispersive X-ray spectroscopy (EDS. The hardnesss of the coatings were tested using a indentation method, and the coating thicknesses were tested using a ellipsometry method.

  12. Mechanical and structural properties of titanium dioxide deposited by innovative magnetron sputtering process

    Directory of Open Access Journals (Sweden)

    Wojcieszak Damian

    2015-09-01

    Full Text Available Titanium dioxide thin films were prepared using two types of magnetron sputtering processes: conventional and with modulated plasma. The films were deposited on SiO2 and Si substrates. X-ray diffraction measurements of prepared coatings revealed that the films prepared using both methods were nanocrystalline. However, the coatings deposited using conventional magnetron sputtering had anatase structure, while application of sputtering with modulated plasma made possible to obtain films with rutile phase. Investigations performed with the aid of scanning electron microscope showed significant difference in the surface morphology as well as the microstructure at the thin film cross-sections. The mechanical properties of the obtained coatings were determined on the basis of nanoindentation and abrasion resistance tests. The hardness was much higher for the films with the rutile structure, while the scratch resistance was similar in both cases. Optical properties were evaluated on the basis of transmittance measurements and showed that both coatings were well transparent in a visible wavelength range. Refractive index and extinction coefficient were higher for TiO2 with rutile structure.

  13. Substrate Frequency Effects on Cr x N Coatings Deposited by DC Magnetron Sputtering

    Science.gov (United States)

    Obrosov, Aleksei; Naveed, Muhammad; Volinsky, Alex A.; Weiß, Sabine

    2016-11-01

    Controlled ion bombardment is a popular method to fabricate desirable coating structures and modify their properties. Substrate biasing at high frequencies is a possible technique, which allows higher ion density at the substrate compared with DC current bias. Moreover, high ion energy along with controlled adatom mobility would lead to improved coating growth. This paper focuses on a similar type of study, where effects of coating growth and properties of DC magnetron-sputtered chromium nitride (Cr x N) coatings at various substrate bias frequencies are discussed. Cr x N coatings were deposited by pulsed DC magnetron sputtering on Inconel 718 and (100) silicon substrates at 110, 160 and 280 kHz frequency at low duty cycle. Coating microstructure and morphology were studied by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), scratch adhesion testing and nanoindentation. Results indicate a transformation of columnar into glassy structure of Cr x N coatings with the substrate bias frequency increase. This transformation is attributed to preferential formation of the Cr2N phase at high frequencies compared with CrN at low frequencies. Increase in frequency leads to an increase in deposition rate, which is believed to be due to increase in plasma ion density and energy of the incident adatoms. An increase in coating hardness along with decrease in elastic modulus was observed at high frequencies. Scratch tests show a slight increase in coating adhesion, whereas no clear increase in coating roughness can be found with the substrate bias frequency.

  14. Highly adherent bioactive glass thin films synthetized by magnetron sputtering at low temperature.

    Science.gov (United States)

    Stan, G E; Pasuk, I; Husanu, M A; Enculescu, I; Pina, S; Lemos, A F; Tulyaganov, D U; El Mabrouk, K; Ferreira, J M F

    2011-12-01

    Thin (380-510 nm) films of a low silica content bioglass with MgO, B(2)O(3), and CaF(2) as additives were deposited at low-temperature (150°C) by radio-frequency magnetron sputtering onto titanium substrates. The influence of sputtering conditions on morphology, structure, composition, bonding strength and in vitro bioactivity of sputtered bioglass films was investigated. Excellent pull-out adherence (~73 MPa) was obtained when using a 0.3 Pa argon sputtering pressure (BG-a). The adherence declined (~46 MPa) upon increasing the working pressure to 0.4 Pa (BG-b) or when using a reactive gas mixture (~50 MPa). The SBF tests clearly demonstrated strong biomineralization features for all bioglass sputtered films. The biomineralization rate increased from BG-a to BG-b, and yet more for BG-c. A well-crystallized calcium hydrogen phosphate-like phase was observed after 3 and 15 days of immersion in SBF in all bioglass layers, which transformed monotonously into hydroxyapatite under prolonged SBF immersion. Alkali and alkali-earth salts (NaCl, KCl and CaCO(3)) were also found at the surface of samples soaked in SBF for 30 days. The study indicated that features such as composition, structure, adherence and bioactivity of bioglass films can be tailored simply by altering the magnetron sputtering working conditions, proving that this less explored technique is a promising alternative for preparing implant-type coatings.

  15. Structural Formation and Photocatalytic Activity of Magnetron Sputtered Titania and Doped-Titania Coatings

    Directory of Open Access Journals (Sweden)

    Peter J. Kelly

    2014-10-01

    Full Text Available Titania and doped-titania coatings can be deposited by a wide range of techniques; this paper will concentrate on magnetron sputtering techniques, including “conventional” reactive co-sputtering from multiple metal targets and the recently introduced high power impulse magnetron sputtering (HiPIMS. The latter has been shown to deliver a relatively low thermal flux to the substrate, whilst still allowing the direct deposition of crystalline titania coatings and, therefore, offers the potential to deposit photocatalytically active titania coatings directly onto thermally sensitive substrates. The deposition of coatings via these techniques will be discussed, as will the characterisation of the coatings by XRD, SEM, EDX, optical spectroscopy, etc. The assessment of photocatalytic activity and photoactivity through the decomposition of an organic dye (methylene blue, the inactivation of E. coli microorganisms and the measurement of water contact angles will be described. The impact of different deposition technologies, doping and co-doping strategies on coating structure and activity will be also considered.

  16. Perspective: Is there a hysteresis during reactive High Power Impulse Magnetron Sputtering (R-HiPIMS)?

    Science.gov (United States)

    Strijckmans, K.; Moens, F.; Depla, D.

    2017-02-01

    This paper discusses a few mechanisms that can assist to answer the title question. The initial approach is to use an established model for DC magnetron sputter deposition, i.e., RSD2013. Based on this model, the impact on the hysteresis behaviour of some typical HiPIMS conditions is investigated. From this first study, it becomes clear that the probability to observe hysteresis is much lower as compared to DC magnetron sputtering. The high current pulses cannot explain the hysteresis reduction. Total pressure and material choice make the abrupt changes less pronounced, but the implantation of ionized metal atoms that return to the target seems to be the major cause. To further substantiate these results, the analytical reactive sputtering model is coupled with a published global plasma model. The effect of metal ion implantation is confirmed. Another suggested mechanism, i.e., gas rarefaction, can be ruled out to explain the hysteresis reduction. But perhaps the major conclusion is that at present, there are too little experimental data available to make fully sound conclusions.

  17. Structure and morphology of magnetron sputter deposited ultrathin ZnO films on confined polymeric template

    Science.gov (United States)

    Singh, Ajaib; Schipmann, Susanne; Mathur, Aakash; Pal, Dipayan; Sengupta, Amartya; Klemradt, Uwe; Chattopadhyay, Sudeshna

    2017-08-01

    The structure and morphology of ultra-thin zinc oxide (ZnO) films with different film thicknesses on confined polymer template were studied through X-ray reflectivity (XRR) and grazing incidence small angle X-ray scattering (GISAXS). Using magnetron sputter deposition technique ZnO thin films with different film thicknesses (molecular weight of polystyrene). The detailed internal structure, along the surface/interfaces and the growth direction of the system were explored in this study, which provides insight into the growth procedure of ZnO on confined polymer and reveals that a thin layer of ZnO, with very low surface and interface roughness, can be grown by DC magnetron sputtering technique, with approximately full coverage (with bulk like electron density) even in nm order of thickness, in 2-7 nm range on confined polymer template, without disturbing the structure of the underneath template. The resulting ZnO-polystyrene hybrid systems show strong ZnO near band edge (NBE) and deep-level (DLE) emissions in their room temperature photoluminescence spectra, where the contribution of DLE gets relatively stronger with decreasing ZnO film thickness, indicating a significant enhancement of surface defects because of the greater surface to volume ratio in thinner films.

  18. Corrosion and Nano-mechanical Behaviors of Magnetron Sputtered Al-Mo Gradient Coated Steel

    Science.gov (United States)

    Venugopal, A.; Srinath, J.; Ramesh Narayanan, P.; Sharma, S. C.; Venkitakrishnan, P. V.

    2016-11-01

    A gradient three-layer Al-Mo coating was deposited on steel using magnetron sputtering method. The corrosion and nano-mechanical properties of the coating were examined by electrochemical impedance spectroscopy and nano-indentation tests and compared with the conventional electroplated cadmium and IVD aluminum coatings. Electrochemical impedance spectroscopy was performed by immersing the coated specimens in 3.5% NaCl solution, and the impedance behavior was recorded as a function of immersion time. The mechanical properties (hardness and elastic modulus) were obtained from each indentation as a function of the penetration depth across the coating cross section. The adhesion resistance of the coatings was evaluated by scratch tests on the coated surface using nano-indentation method. The results show that the gradient Al-Mo coating exhibits better corrosion resistance than the other coatings in view of the better microstructure. The impedance results were modeled using appropriate electrical equivalent circuits for all the coated systems. The uniform, smooth and dense Al-Mo coating obtained by magnetron sputtering exhibits good adhesion with the steel substrate as per scratch test method. The poor corrosion resistance of the later coatings was shown to be due to the defects/cracks as well as the lesser adhesion of the coatings with steel. The hardness and elastic modulus of the Al-Mo coating are found to be high when compared to the other coatings.

  19. High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

    2015-01-01

    Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films.

  20. Electrical and Optical Properties of Fluorine Doped Tin Oxide Thin Films Prepared by Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Ziad Y. Banyamin

    2014-10-01

    Full Text Available Fluorine doped tin oxide (FTO coatings have been prepared using the mid-frequency pulsed DC closed field unbalanced magnetron sputtering technique in an Ar/O2 atmosphere using blends of tin oxide and tin fluoride powder formed into targets. FTO coatings were deposited with a thickness of 400 nm on glass substrates. No post-deposition annealing treatments were carried out. The effects of the chemical composition on the structural (phase, grain size, optical (transmission, optical band-gap and electrical (resistivity, charge carrier, mobility properties of the thin films were investigated. Depositing FTO by magnetron sputtering is an environmentally friendly technique and the use of loosely packed blended powder targets gives an efficient means of screening candidate compositions, which also provides a low cost operation. The best film characteristics were achieved using a mass ratio of 12% SnF2 to 88% SnO2 in the target. The thin film produced was polycrystalline with a tetragonal crystal structure. The optimized conditions resulted in a thin film with average visible transmittance of 83% and optical band-gap of 3.80 eV, resistivity of 6.71 × 10−3 Ω·cm, a carrier concentration (Nd of 1.46 × 1020 cm−3 and a mobility of 15 cm2/Vs.

  1. ZrN coatings deposited by high power impulse magnetron sputtering and cathodic arc techniques

    Energy Technology Data Exchange (ETDEWEB)

    Purandare, Yashodhan, E-mail: Y.Purandare@shu.ac.uk; Ehiasarian, Arutiun; Hovsepian, Papken [Nanotechnology Centre for PVD Research, Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom); Santana, Antonio [Ionbond AG Olten, Industriestrasse 211, CH-4600 Olten (Switzerland)

    2014-05-15

    Zirconium nitride (ZrN) coatings were deposited on 1 μm finish high speed steel and 316L stainless steel test coupons. Cathodic Arc (CA) and High Power Impulse Magnetron Sputtering (HIPIMS) + Unbalanced Magnetron Sputtering (UBM) techniques were utilized to deposit coatings. CA plasmas are known to be rich in metal and gas ions of the depositing species as well as macroparticles (droplets) emitted from the arc sports. Combining HIPIMS technique with UBM in the same deposition process facilitated increased ion bombardment on the depositing species during coating growth maintaining high deposition rate. Prior to coating deposition, substrates were pretreated with Zr{sup +} rich plasma, for both arc deposited and HIPIMS deposited coatings, which led to a very high scratch adhesion value (L{sub C2}) of 100 N. Characterization results revealed the overall thickness of the coatings in the range of 2.5 μm with hardness in the range of 30–40 GPa depending on the deposition technique. Cross-sectional transmission electron microscopy and tribological experiments such as dry sliding wear tests and corrosion studies have been utilized to study the effects of ion bombardment on the structure and properties of these coatings. In all the cases, HIPIMS assisted UBM deposited coating fared equal or better than the arc deposited coatings, the reasons being discussed in this paper. Thus H+U coatings provide a good alternative to arc deposited where smooth, dense coatings are required and macrodroplets cannot be tolerated.

  2. Study of cobalt mononitride thin films prepared using DC and high power impulse magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Rachana, E-mail: dr.rachana.gupta@gmail.com [Institute of Engineering & Technology, DAVV, Khandwa Road, Indore – 452 017 (India); Pandey, Nidhi; Behera, Layanta; Gupta, Mukul [UGC-DAE Consortium for Scientific Research, Khandwa Road, University Campus, Indore-452001 (India)

    2016-05-23

    In this work we studied cobalt mononitride (CoN) thin films deposited using dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS). A Co target was sputtered using pure N{sub 2} gas alone as the sputtering medium. Obtained long-range structural ordering was studies using x-ray diffraction (XRD), short-range structure using Co L{sub 2,3} and N K absorption edges using soft x-ray absorption spectroscopy (XAS) and the surface morphology using atomic force microscopy (AFM). It was found that HiPIMS deposited films have better long-range ordering, better stoichiometric ratio for mononitride composition and smoother texture as compared to dcMS deposited films. In addition, the thermal stability of HiPIMS deposited CoN film seems to be better. On the basis of different type of plasma conditions generated in HiPIMS and dcMS process, obtained results are presented and discussed.

  3. Structure and magnetic properties of columnar Fe-N thin films deposited by direct current magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    JIA Hui; WANG Xin; PANG Shao-ping; ZHENG Wei-tao; LONG Bei-hong; LI Bo

    2009-01-01

    Columnar Fe-N thin films with thickness ranging from 30 to 150 nm were deposited by direct current magnetron sputtering using an Ar/N2 gas mixture (V(N2)/V(N2+Ar)=5%) on corning glass substrates. The structure, surface morphology and magnetic properties were investigated using X-ray diffractometry(XRD), scanning electron microscopy, atomic force microscopy, transmission electron microscopy(TEM) and superconducting quantum interference magnetometry. XRD investigation shows that Fe-N films exhibit amorphous-like structures; however, TEM measurements indicate the synthesis of mixture phases of α-Fe+ζ-Fe2N+ε-Fe3N in these films. The magnetic anisotropy and coercivity of Fe-N thin films exhibit strong dependence on the film growth behavior and surface morphology. With increasing the height of Fe-N films with column structures, the coercivity increases from 7.96 kA/m to 22.28 kA/m in the direction parallel to the film surface. In perpendicular direction the coercivity only increases slightly from 39.79 kA/m to 43.77 kA/m. However, the values of anisotropy field increase from 0.79×106 to 1.44×106 A/m, which is mainly attributed to the shape anisotropy of elongated columns due to the fact that the difference of magneto-crystalline anisotropy among these Fe-N films is small. The saturation magnetizations of Fe-N films vary with increasing film thickness from 23.5 to 85.1 A-m2/kg.

  4. Dielectric, optical and electric studies on nanocrystalline Ba5Nb4O15 thin films deposited by RF magnetron sputtering

    Science.gov (United States)

    Anil Kumar, C.; Pamu, D.

    2015-06-01

    We report the fabrication of nanocrystalline Ag/BNO/Pt/Ti/SiO2/Si thin film capacitors by RF magnetron sputtering with different film thicknesses. The effect of Ba5Nb4O15 (BNO) thickness on structural, microstructural, electrical, optical and dielectric properties is investigated for the first time. BNO sputtering target prepared is by mechanochemical synthesis method to eliminate the subordinate phases. As deposited thin films were X-ray amorphous and crystallinity is induced after annealing at 700 °C. Upon annealing, refractive indices of the films enhanced whereas the bandgap is decreased and are in the range of 1.89-2.16 and 4.07-4.24, respectively. With an increase in thickness, the dielectric properties improved substantially, which is described by the representation of a dead layer connected in series with a bulk region of the BNO film. The extracted values of thickness and dielectric constant for the dead layer found to be 15.21 nm and 37.03, correspondingly. The activation energy of the mobile charge carriers obtained using the Arrhenius relation are found to be 0.254, 0.036 and 0.027 eV, for the films with 150, 250 and 450 nm, respectively. The leakage current density found to decrease with thickness and found to be 2.5 × 10-6 A/cm2 at applied voltage of 50 kV/cm. The J-E characteristics of the BNO films show a combined response of grain, grain boundaries and film-electrode interfaces. It is interesting to note that in the negative electric field region, conduction is ohmic in nature whereas in the positive field region BNO films exhibit both ohmic and the space charge-limited current mechanisms. The achieved dielectric, electrical and optical properties make these films suitable for MIC, CMOS and optoelectronic applications.

  5. Physical and Optical Properties of SnO2/ZnO Film Prepared by an RF Magnetron Sputtering Method.

    Science.gov (United States)

    Park, Jooyoung; Lee, Ikjae; Kim, Jaeyong

    2016-03-01

    Al-, Ga-, and In-doped ZnO thin films are widely used in many technical applications, such as in solar cells and on transparent conducting oxides having high optical transmission and low resistivity values. We prepared SnO2-doped ZnO thin films on quartz substrates by using an RF magnetron sputtering method at a substrate temperature of 350 degrees C. The ratio of SnO2 to ZnO was varied from 0 to 5:5 to investigate the effects of Sn on structure and physical properties of ZnO film. The samples were synthesized at a base pressure of 1.3 x 10(-4) Pa with a working pressure of 1.3 Pa and an RF power of 40 W under Ar atmosphere. The results of X-ray diffraction data revealed that pure ZnO films exhibit a strong (002) orientation and a polycrystalline wurzite hexagonal structure. However, as increasing the SnO2 concentration, ZnO transforms to an amorphous phase. The results of the Hall-effect-measurement system revealed that the resistivity values of the films increased as increasing the doping level of SnO2. The AFM data of morphology and microstructure showed that the grain size decreased with increasing SnO2 contents while the total area of grain the boundary increased. The average value of the transmittance of the films in the visible light range was 80-95% and was shifted toward to the shorter wavelengths of the absorption edges with increasing SnO2 contents.

  6. The preparation of thermally stable TiNx/Ag(Mo)/TiNx ultrathin films by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Loka, Chadrasekhar; Yu, Ho Tak; Lee, Kee-Sun, E-mail: kslee@kongju.ac.kr

    2014-11-03

    Thermally stable optically selective coatings are indispensable for low emissivity (low-e) applications. Low-e coatings effectively reduce energy loss from the building glazing systems by allowing high visible transmittance and reflecting most near-infrared radiation of the solar spectrum. In the present study, we investigated the thermal stability and optical properties of TiNx/Ag(Mo)/TiNx films deposited on glass substrates by using rf and dc magnetron sputtering at room temperature. The deposited multilayer stacks were annealed up to 873 K for 1 h in air ambient and a rigorous analysis was presented on the structure, microstructure, topography, chemical composition, and optical properties by grazing incidence X-ray diffraction, high resolution transmission electron microscopy, scanning electron microscopy, atomic force microscopy, Auger electron spectroscopy, and Ultraviolet–visible–near infrared spectrophotometer, respectively. The results revealed that the proposed structure was thermally stable with dense and smooth microstructure until 773 K; in addition, noteworthy inward/outward diffusion of silver was not observed due to the good diffusion barrier performance of TiNx. An abrupt rise in root mean square roughness and locally isolated islands like structures was observed at 873 K annealing temperature. The deposited films showed high transmittance in the visible region and high reflectance in the infrared region of the solar radiation spectrum. - Highlights: • TiNx/Ag(Mo)/TiNx/films were thermally durable until 773 K. • High visible transmittance was obtained by adopting the amorphous TiNx films. • Ag(Mo) film was protected until 773 K by partial oxidation of TiNx layers.

  7. Thickness effect on properties of titanium film deposited by d.c. magnetron sputtering and electron beam evaporation techniques

    Indian Academy of Sciences (India)

    Nishat Arshi; Junqing Lu; Chan Gyu Lee; Jae Hong Yoon; Bon Heun Koo; Faheem Ahmed

    2013-10-01

    This paper reports effect of thickness on the properties of titanium (Ti) film deposited on Si/SiO2 (100) substrate using two different methods: d.c. magnetron sputtering and electron beam (e-beam) evaporation technique. The structural and morphological characterization of Ti film were performed using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). XRD pattern revealed that the films deposited using d.c. magnetron sputtering have HCP symmetry with preferred orientation along (002) plane, while those deposited with e-beam evaporation possessed fcc symmetry with preferred orientation along (200) plane. The presence of metallic Ti was also confirmed by XPS analysis. FESEM images depicted that the finite sized grains were uniformly distributed on the surface and AFM micrographs revealed roughness of the film. The electrical resistivity measured using four-point probe showed that the film deposited using d.c. magnetron sputtering has lower resistivity of ∼13 cm than the film deposited using e-beam evaporation technique, i.e. ∼60 cm. The hardness of Ti films deposited using d.c. magnetron sputtering has lower value (∼7.9 GPa) than the film deposited using e-beam technique (∼9.4 GPa).

  8. Optical and electrical properties of thin NiO films deposited by reactive magnetron sputtering and spray pyrolysis

    Science.gov (United States)

    Parkhomenko, H. P.; Solovan, M. N.; Mostovoi, A. I.; Orletskii, I. G.; Parfenyuk, O. A.; Maryanchuk, P. D.

    2017-06-01

    Thin NiO films are deposited by reactive magnetron sputtering and spray pyrolysis. The main optical constants, i.e., refractive index n(λ), absorption coefficient α(λ), extinction coefficient k(λ), and thickness d, are determined. The temperature dependence of the resistance of thin films is found, and the activation energy of films deposited by different methods is determined.

  9. Exploring the benefits of depositing hard TiN thin films by non-reactive magnetron sputtering

    NARCIS (Netherlands)

    Martinez-Martinez, D.; Lopez-Cartes, C.; Fernandez, A.; Sanchez-Lopez, J. C.

    2013-01-01

    The aim of this paper is to compare the mechanical and tribological properties of TiN coatings prepared in a conventional magnetron sputtering chamber according to two different routes: the usual reactive sputtering of a Ti target in an Ar/N-2 atmosphere vs. the comparatively more simple sputtering

  10. Investigation of Texture and Residual Stresses in Reactive Magnetron Sputtered TiN coatings on M2 Steel Substrates

    Science.gov (United States)

    Mirchev, R.; Iordanova, I.; Antonov, V.; Kelly, P. J.

    2007-04-01

    The development of crystallographic texture and residual macro-stresses during the growth from 500 nm to 4000 nm of TiN films applied by reactive Closed Field Unbalanced Magnetron Sputtering (CFUBMS) on M2 tool steel at three direct target currents (Id) (namely 4, 6 and 8A) have been analyzed via X-ray diffraction.

  11. The influence of N2 flow rate on Ar and Ti Emission in high-pressure magnetron sputtering system plasma

    Science.gov (United States)

    How, Soo Ren; Nayan, Nafarizal; Lias, Jais

    2017-03-01

    For ionized physical vapor deposition (known as IPVD) technique, investigation on the ionization mechanism of titanium atoms is very important during the deposition of titanium nitride (TiN) thin film using reactive magnetron sputtering plasma. The introduction of nitrogen gas into the chamber discharge leads to modifications of plasma parameters and ionization mechanism of transition species. In this work, an investigation on the influence of nitrogen flow rate on spectrum properties of argon and titanium during the deposition process have been carried out. The experimental configuration consists of OES and structure of magnetron sputtering device with the turbo molecular pump. A high-pressure magnetron sputtering plasma was used as plasma discharge chamber with various flow rate of nitrogen gas. Optical emission spectroscopy (OES) measurements were employed as plasma diagnostics tool in magnetron sputtering plasma operated at relatively high pressure. OES is a non-invasive plasma diagnostics method and that can detect the atomic and ionic emission during plasma discharge. The flow rate of the Ar and N2 gas are controlled by mass flow controller. The changes of relative emission for both neutral and ionic of argon as well as titanium were observed using optical spectrometer when the nitrogen gas is introduced into the discharged chamber. We found that the titanium emission decreased very rapidly with the flow rate of nitrogen. In addition, the argon emission slightly decreased with the flow rate of nitrogen.

  12. Structural and optical properties of a-Si{sub 1-x}C{sub x}:H films synthesized by dc magnetron sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Keffous, Aissa, E-mail: keffousa@yahoo.fr [Silicon Technology Development Unit (UDTS), 02 Bd, Frantz FANON, B.P. 140, Algiers (Algeria); Cheriet, Abdelhak; Belkacem, Youcef; Gabouze, Noureddine; Boukezzata, Assia; Boukennous, Yacine [Silicon Technology Development Unit (UDTS), 02 Bd, Frantz FANON, B.P. 140, Algiers (Algeria); Brighet, Amer; Cherfi, Rabah; Kechouane, Mohamed [Houari Boumediene Science and Technology University (USTHB), Physics Faculty, Algiers (Algeria); Guerbous, Lakhdar [Algerian Nuclear Research Center (CRNA), Algiers (Algeria); Menous, Isa; Menari, Hamid [Silicon Technology Development Unit (UDTS), 02 Bd, Frantz FANON, B.P. 140, Algiers (Algeria)

    2010-05-01

    Hydrogenated amorphous SiC films (a-Si{sub 1-x}C{sub x}:H) were prepared by dc magnetron sputtering technique on p-type Si(1 0 0) and corning 9075 substrates at low temperature, by using 32 sprigs of silicon carbide (6H-SiC). The deposited a-Si{sub 1-x}C{sub x}:H film was realized under a mixture of argon and hydrogen gases. The a-Si{sub 1-x}C{sub x}:H films have been investigated by scanning electronic microscopy equipped with an EDS system (SEM-EDS), X-ray diffraction (XRD), secondary ions mass spectrometry (SIMS), Fourier transform infrared spectroscopy (FTIR), UV-vis-IR spectrophotometry, and photoluminescence (PL). XRD results showed that the deposited film was amorphous with a structure as a-Si{sub 0.80}C{sub 0.20}:H corresponding to 20 at.% carbon. The photoluminescence response of the samples was observed in the visible range at room temperature with two peaks centred at 463 nm (2.68 eV) and 542 nm (2.29 eV). In addition, the dependence of photoluminescence behaviour on film thickness for a certain carbon composition in hydrogenated amorphous SiC films (a-Si{sub 1-x}C{sub x}:H) has been investigated.

  13. Effect of substrate temperature on the arrangement of ultra-thin TiO{sub 2} films grown by a dc-magnetron sputtering deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bukauskas, Virginijus, E-mail: virgis@pfi.lt [Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius (Lithuania); Kaciulis, Saulius; Mezzi, Alessio [Istituto per lo Studio dei Materiali Nanostrutturati, ISMN-CNR, P.O. Box 10, I-00015 Monterotondo Stazione, Roma (Italy); Mironas, Audružis; Niaura, Gediminas; Rudzikas, Matas; Šimkienė, Irena; Šetkus, Arūnas [Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius (Lithuania)

    2015-06-30

    TiO{sub 2} films with a thickness between 3 and 10 nm are obtained by a dc-magnetron sputtering deposition in the reactive gas atmosphere and the properties of the films are investigated by the Raman spectroscopy, X-ray photoelectron spectroscopy and scanning probe microscopy. An influence of the deposition temperature and the post-growth annealing on the properties of the films is studied at the temperatures from 375 to 650 K. It is experimentally demonstrated that the crystalline structure can be identified by the Raman spectroscopy in the films with the thickness higher than 9 nm and annealed in the oxygen rich atmosphere for at least 2 h at about 630 K. It is proved that the changes in the film structure are not related to the changes in the chemical composition, the Ti state, and the stoichiometry of the films. Basing on the fractal analysis of topographical images, it is shown that the structural changes can be associated with the changes in the fractal dimension. These changes can be a quantitative characteristic of the structure for the films thinner than 10 nm. - Highlights: • TiO{sub 2} films (< 10 nm) with crystalline anatase and amorphous grains were investigated. • Amounts of the crystalline and amorphous grains depend on the substrate temperature. • Fractal dimension is used as an indicator of a crystalline–amorphous grain mixture.

  14. Synthesis and characterization of Gd-doped magnetite nanoparticles

    Science.gov (United States)

    Zhang, Honghu; Malik, Vikash; Mallapragada, Surya; Akinc, Mufit

    2017-02-01

    Synthesis of magnetite nanoparticles has attracted increasing interest due to their importance in biomedical and technological applications. Tunable magnetic properties of magnetite nanoparticles to meet specific requirements will greatly expand the spectrum of applications. Tremendous efforts have been devoted to studying and controlling the size, shape and magnetic properties of magnetite nanoparticles. Here we investigate gadolinium (Gd) doping to influence the growth process as well as magnetic properties of magnetite nanocrystals via a simple co-precipitation method under mild conditions in aqueous media. Gd doping was found to affect the growth process leading to synthesis of controllable particle sizes under the conditions tested (0-10 at% Gd3+). Typically, undoped and 5 at% Gd-doped magnetite nanoparticles were found to have crystal sizes of about 18 and 44 nm, respectively, supported by X-ray diffraction and transmission electron microscopy. Our results showed that Gd-doped nanoparticles retained the magnetite crystal structure, with Gd3+ randomly incorporated in the crystal lattice, probably in the octahedral sites. The composition of 5 at% Gd-doped magnetite was Fe(3-x)GdxO4 (x=0.085±0.002), as determined by inductively coupled plasma mass spectrometry. 5 at% Gd-doped nanoparticles exhibited ferrimagnetic properties with small coercivity ( 65 Oe) and slightly decreased magnetization at 260 K in contrast to the undoped, superparamagnetic magnetite nanoparticles. Templation by the bacterial biomineralization protein Mms6 did not appear to affect the growth of the Gd-doped magnetite particles synthesized by this method.

  15. EFFECT OF MAGNETRON-SPUTTERED Al FILM ON LOW-TEMPERATURE PACK-ALUMINIZING COATING FOR OIL CASING STEEL N80

    OpenAIRE

    MIN HUANG; YU WANG; MENG-XIAN ZHANG; YAN-QIU HUO; PENG-JIN GAO

    2014-01-01

    Low-temperature aluminizing coating was prepared onto the surface of oil casing steel N80 with a magnetron-sputtered Al film to improve its corrosion resistance. Results show that magnetron-sputtered Al film is able to form gradient aluminide coating, composed of iron aluminide FeAl3, Fe2Al5 and Fe3Al with different contents of aluminum. Both the density and continuity of iron aluminide layer for oil casing steel N80 with magnetron-sputtered Al film can be improved. Under the same corrosion c...

  16. Fabricating Pinhole-Free YSZ Sub-Microthin Films by Magnetron Sputtering for Micro-SOFCs

    Directory of Open Access Journals (Sweden)

    T. Hill

    2011-01-01

    Full Text Available Submicron thin yttria stabilized zirconia (YSZ films were prepared on a variety of substrates with different surface morphologies by magnetron sputtering followed by thermal oxidation. Pinholes were observed in the films deposited on nanoporous alumina substrates. Initial dense Y/Zr films developed nanocracks after thermal oxidation on smooth Si wafer substrates. At optimal sputtering and oxidation conditions, smooth and crack/pore-free films were achieved on Si wafer substrates. The thin YSZ films exhibited fully ionic conduction with ionic conductivities, and activation energy corroborated well with the values from commercial YSZ plates. The thin YSZ films can be utilized in Solid Oxide Fuel Cells (SOFCs for intermediate temperature operations.

  17. Control over the preferred orientation of CIGS films deposited by magnetron sputtering using a wetting layer

    Science.gov (United States)

    Yan, Yong; Jiang, Fan; Liu, Lian; Yu, Zhou; Zhang, Yong; Zhao, Yong

    2016-01-01

    A growth method is presented to control the preferred orientation in chalcopyrite CuIn x Ga1- x Se2 (CIGS) thin films grown by magnetron sputtering. Films with (220/204) and (112) preferred orientation as well as randomly oriented films were prepared. The effects of an In2Se3 wetting layer and the working pressure on the texture transition phenomena were examined. A large-grained CIGS film with (220/204) texture was formed at 400°C with the inclusion of a thin (80 nm) In2Se3 layer and liquid phase (excess copper selenide phase) formation, and the reaction mechanism is proposed. The device deposited at 2.0 Pa on an In2Se3 layer exhibited the optimal electrical properties. [Figure not available: see fulltext.

  18. RF Magnetron Sputtering Aluminum Oxide Film for Surface Passivation on Crystalline Silicon Wafers

    Directory of Open Access Journals (Sweden)

    Siming Chen

    2013-01-01

    Full Text Available Aluminum oxide films were deposited on crystalline silicon substrates by reactive RF magnetron sputtering. The influences of the deposition parameters on the surface passivation, surface damage, optical properties, and composition of the films have been investigated. It is found that proper sputtering power and uniform magnetic field reduced the surface damage from the high-energy ion bombardment to the silicon wafers during the process and consequently decreased the interface trap density, resulting in the good surface passivation; relatively high refractive index of aluminum oxide film is benefic to improve the surface passivation. The negative-charged aluminum oxide film was then successfully prepared. The surface passivation performance was further improved after postannealing by formation of an SiOx interfacial layer. It is demonstrated that the reactive sputtering is an effective technique of fabricating aluminum oxide surface passivation film for low-cost high-efficiency crystalline silicon solar cells.

  19. Coating multilayer material with improved tribological properties obtained by magnetron sputtering

    Science.gov (United States)

    Mateescu, A. O.; Mateescu, G.; Balasoiu, M.; Pompilian, G. O.; Lungu, M.

    2017-02-01

    This work is based on the Patent no. RO 128094 B1, granted by the Romanian State Office for Inventions and Trademarks. The goal of the work is to obtain for investigations tribological coatings with multilayer structure with improved tribological properties, deposited by magnetron sputtering process from three materials (sputtering targets). Starting from compound chemical materials (TiC, TiB2 and WC), as sputtering targets, by deposition in argon atmosphere on polished stainless steel, we have obtained, based on the claims of the above patent, thin films of multilayer design with promising results regarding their hardness, elastic modulus, adherence, coefficient of friction and wear resistance. The sputtering process took place in a special sequence in order to ensure better tribological properties to the coating, comparing to those of the individual component materials. The tribological properties, such as the coefficient of friction, are evaluated using the tribometer test.

  20. Dielectric properties of tetragonal tungsten bronze films deposited by RF magnetron sputtering

    Science.gov (United States)

    Bodeux, Romain; Michau, Dominique; Josse, Michaël; Maglione, Mario

    2014-12-01

    Tetragonal tungsten bronze (TTB) films have been synthesised on Pt(111)/TiO2/SiO2/Si substrates from Ba2LnFeNb4O15 ceramics (Ln = La, Nd, Eu) by RF magnetron sputtering. X-ray diffraction measurements evidenced the multi-oriented nature of films with some degrees of preferential orientation along (111). The dependence of the dielectric properties on temperature and frequency has been investigated. The dielectric properties of the films are similar to those of the bulk, i.e., ɛ ˜150 and σ ˜10-6 Ω-1 cm-1 at 1 MHz and room temperature. The films exhibit two dielectric anomalies which are attributed to Maxwell Wagner polarization mechanism and relaxor behaviour. Both anomalies are sensitive to post-annealing under oxygen atmosphere and their activation energies are similar Ea ˜0.30 eV. They are explained in terms of electrically heterogeneous contributions in the films.

  1. Characterization of hydrogenated and deuterated thin carbon films deposited by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Pantelica, D., E-mail: pantel@nipne.ro [Horia Hulubei National Institute for Physics and Nuclear Engineering (IFIN-HH), P.O.B. MG-6, 30 Reactorului St., RO 077125 Magurele (Romania); Ionescu, P.; Petrascu, H. [Horia Hulubei National Institute for Physics and Nuclear Engineering (IFIN-HH), P.O.B. MG-6, 30 Reactorului St., RO 077125 Magurele (Romania); Nita, C.R. [Horia Hulubei National Institute for Physics and Nuclear Engineering (IFIN-HH), P.O.B. MG-6, 30 Reactorului St., RO 077125 Magurele (Romania); University Politehnica of Bucharest, RO 060042 Bucharest (Romania); Matei, E.; Rasoga, O. [National Institute for Materials Physics, 105 Atomistilor Str., RO 077125 Magurele-Bucharest (Romania); Acsente, T.; Dinescu, G. [National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Str., RO 077125 Magurele-Bucharest (Romania)

    2014-07-15

    Thin films of C layers were deposited by radiofrequency magnetron sputtering on silicon substrates using three gaseous atmospheres: pure Ar, Ar + H{sub 2} and Ar + D{sub 2} mixtures. Scanning Electron Microscopy investigations showed that addition of D{sub 2} or H{sub 2} to main sputtering gas (Ar) leads to the enhancement of the deposition rate while the layer morphology remained columnar. Fourier Transform Infrared Spectroscopy measurements revealed the presence of D–C or H–C chemical bonds in the samples. Ion beam analysis measurements performed by simultaneous recording of the recoiled H and D ions, and of backscattered {sup 4}He confirmed the incorporation of hydrogen and deuterium in the deposited carbon thin films.

  2. The existence of a double S-shaped process curve during reactive magnetron sputtering

    Science.gov (United States)

    Schelfhout, R.; Strijckmans, K.; Depla, D.

    2016-09-01

    The four dimensional parameter space (discharge voltage and current and reactive gas flow and pressure) related to a reactive Ar/O2 DC magnetron discharge with an aluminum target and constant pumping speed was acquired by measuring current-voltage characteristics at different oxygen flows. The projection onto the pressure-flow plane allows us to study the well-known S-shaped process curve. This experimental procedure guarantees no time dependent effects on the result. The obtained process curve appears not to be unique but rather two significantly different S-shaped curves are noticed which depend on the history of the steady state target condition. As such, this result has not only an important impact on the fundamental description of the reactive sputtering process but it can also have its consequences on typical feedback control systems for the operation in the transition regime of the hysteresis during reactive magnetron sputtering.

  3. Experimental investigation on photoelectric properties of ZAO thin film deposited on flexible substrate by magnetron sputtering

    Science.gov (United States)

    Hao, Ming; Liu, Kun; Liu, Xinghua; Wang, Dongyang; Ba, Dechun; Xie, Yuanhua; Du, Guangyu; Ba, Yaoshuai

    2016-12-01

    Transparent conductive ZAO (Zinc Aluminum Oxide) films on flexible substrates have a great potential for low-cost mass-production solar cells. ZAO thin films were achieved on flexible PET (polyethylene terephthalate) substrates by RF magnetron sputtering technology. The surface morphology and element content, the transmittance and the sheet resistance of the films were measured to determine the optical process parameters. The results show that the ZAO thin film shows the best parameters in terms of photoelectric performance including sputtering power, working pressure, sputtering time, substrate temperature (100 W, 1.5 Pa, 60 min, 125 °C). The sheet resistance of 510 Ω and transmittance in visible region of 92% were obtained after characterization. Surface morphology was uniform and compact with a good crystal grain.

  4. Characterization of ZrO2 Films Deposited by Reactive Unbalanced Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    ZHAO Sha; XU Ke-wei; WANG Yuan

    2004-01-01

    ZrO2 thin films were deposited by r.f. reactive unbalanced magnetron sputtering. The influence of electromagnetic coil current on microstructure and optical properties of the films was investigated. At low coil current of 0.2A, small grains are produced. With the increase of coil current, the deposition rate and surface roughness are decreased and the packing density in proportion to the refractive index is increased remarkably. The refractive index is as high as 2.236 (at λ=600nm) at 0.4A. At the high coil current of 0.6A, grains appear to grow up due to thermal effects and therefore optical properties of the films are deteriorated a little.

  5. Nanoscale Multilayered ZrAlN/ZrB2 Coatings Synthesized by Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    Dejun LI

    2006-01-01

    Multilayered ZrAlN/ZrB2 coatings containing alternating bilayer periods were synthesized by dc magnetron sputtering technique. The intensities of ZrN (111) or ZrN (200) textures in the structure of the nanolayers depended on the bilayer period as well as N2 gas partial pressure during deposition. Nanoindentation testing showed that hardness and internal stress of the nanolayers varied with the bilayer period and crystallographic orientation in the coatings. The hardness of the nanolayers with bilayer periods of 3~6 nm was enhanced (~27%) over the rule-of-mixture value. A low percent of N2 in processing gas was proved to be benefitial to the synthesis of high hard nanoscale multilayered coatings.

  6. Manufacturing of HfOxNy films using reactive magnetron sputtering for ISFET application

    Science.gov (United States)

    Firek, Piotr; Wysokiński, Piotr

    2016-12-01

    Hafnium Oxide-Nitride films were deposited using reactive magnetron sputtering in O2/N2/Ar gas mixture. Deposition was planned according to Taguchi optimization method. Morphology of fabricated layers was tested using AFM technique (Ra=0.2÷1,0 nm). Thickness of HfOXNY films was measured using spectroscopic ellipsometry (t=45÷54 nm). Afterwards MIS structures were created by Al metallization process then layers were electrically characterised using I-V and C-V measurements. This allowed to calculate the electrical parameters of layers such as: flat-band voltage UFB, dielectric constant Ki, interface state trap density Dit and effective charge Qeff. Subsequently, deposited HfOxNy layers were annealed in PDA process (40 min 400 °C 100% N2) after which the electrical characterization was performed again.

  7. Nitrogen Contents on Tribological Properties of Magnetron Sputtered SiCN Coatings

    Institute of Scientific and Technical Information of China (English)

    TIETUNSUN; Y.Q.FU; J.WEI; H.J.DU

    2004-01-01

    Silicon carbonitride (SiCN) coatings were deposited on silicon and tungsten carbide substrates by co-sputtering silicon and carbon in argon and nitrogen mixture atmosphere using magnetron-sputtering system. The effect of the N2 concentration, RF substrate bias voltage and target current on film deposition rate, roughness, adhesion, mechanical and tribological properties of coatings were investigated. The deposition rate was found to increase with the increasing nitrogen concentration. X-ray photoelectron spectroscopy analysis showed that high nitrogen concentration in the nitrogen-argon gas mixture enhanced the incorporation of C and N but reduced the incorporation of Si. SiCN coatings have good tribological properties at a N2 concentration of approximately 60%.

  8. Reduction in plasma potential by applying negative DC cathode bias in RF magnetron sputtering

    Science.gov (United States)

    Isomura, Masao; Yamada, Toshinori; Osuga, Kosuke; Shindo, Haruo

    2016-11-01

    We applied a negative DC bias voltage to the cathode of an RF magnetron sputtering system and successfully reduced the plasma potential in both argon plasma and hydrogen-diluted argon plasma. The crystallinity of the deposited Ge films is improved by increasing the negative DC bias voltage. It is indicated that the reduction in plasma potential is effective for reducing the plasma damage on deposited materials, caused by the electric potential between the plasma and substrates. In addition, the deposition rate is increased by the increased electric potential between the plasma and the cathode owing to the negative DC bias voltage. The present method successfully gives us higher speed and lower damage sputtering deposition. The increased electric potential between the plasma and the cathode suppresses the evacuation of electrons from the plasma and also enhances the generation of secondary electrons on the cathode. These probably suppress the electron loss from the plasma and result in the reduction in plasma potential.

  9. FTO films deposited in transition and oxide modes by magnetron sputtering using tin metal target.

    Science.gov (United States)

    Liao, Bo-Huei; Chan, Shih-Hao; Lee, Cheng-Chung; Kuo, Chien-Cheng; Chen, Sheng-Hui; Chiang, Donyau

    2014-02-01

    Fluorine-doped tin oxide (FTO) films were prepared by pulsed DC magnetron sputtering with a metal Sn target. Two different modes were applied to deposit the FTO films, and their respective optical and electrical properties were evaluated. In the transition mode, the minimum resistivity of the FTO film was 1.63×10(-3)  Ω cm with average transmittance of 80.0% in the visible region. Furthermore, FTO films deposited in the oxide mode and mixed simultaneously with H2 could achieve even lower resistivity to 8.42×10(-4)  Ω cm and higher average transmittance up to 81.1% in the visible region.

  10. Hydroxyapatite coatings on nanotubular titanium dioxide thin films prepared by radio frequency magnetron sputtering.

    Science.gov (United States)

    Shin, Jinho; Lee, Kwangmin; Koh, Jeongtae; Son, Hyeju; Kim, Hyunseung; Lim, Hyun-Pil; Yun, Kwidug; Oh, Gyejeong; Lee, Seokwoo; Oh, Heekyun; Lee, Kyungku; Hwang, Gabwoon; Park, Sang-Won

    2013-08-01

    In this study, hydroxyapatite (HA) was coated on anodized titanium (Ti) surfaces through radio frequency magnetron sputtering in order to improve biological response of the titanium surface. All the samples were blasted with resorbable blasting media (RBM). RBM-blasted Ti surface, anodized Ti surface, as-sputtered HA coating on the anodized Ti surface, and heat-treated HA coating on the anodized Ti surface were prepared. The samples were characterized using scanning electron microscopy and X-ray photoemission spectroscopy, and biologic responses were evaluated. The top of the TiO2 nanotubes was not closed by HA particles when the coating time is less than 15 minutes. It was demonstrated that the heat-treated HA was well-crystallized and this enhanced the cell attachment of the anodized Ti surface.

  11. Microstructure and properties of SiC-coated carbon fibers prepared by radio frequency magnetron sputtering

    Science.gov (United States)

    Cheng, Yong; Huang, Xiaozhong; Du, Zuojuan; Xiao, Jianrong; Zhou, Shan; Wei, Yongshan

    2016-04-01

    SiC-coated carbon fibers are prepared at room temperature with different radio-frequency magnetron sputtering powers. Results show that the coated carbon fibers have uniform, continuous, and flawless surfaces. The mean strengths of the coated carbon fibers with different sputtering powers are not influenced by other factors. Filament strength of SiC-coated carbon fibers increases by approximately 2% compared with that of uncoated carbon fibers at a sputtering power of coated fibers increase by 9.3% and 12% at sputtering powers of 250 and 300 W, respectively. However, the mean strength of the SiC-coated carbon fibers decreased by 8% at a sputtering power of 400 W.

  12. Ionic conductivity and thermal stability of magnetron-sputtered nanocrystalline yttria-stabilized zirconia

    DEFF Research Database (Denmark)

    Sillassen, M.; Eklund, P.; Sridharan, M.;

    2009-01-01

    Thermally stable, stoichiometric, cubic yttria-stabilized zirconia (YSZ) thin-film electrolytes have been synthesized by reactive pulsed dc magnetron sputtering from a Zr–Y (80/20 at. %) alloy target. Films deposited at floating potential had a texture. Single-line profile analysis of the 111 x.......5% at bias voltages of −175 and −200 V with additional incorporation of argon. The films were thermally stable; very limited grain coarsening was observed up to an annealing temperature of 800 °C. Temperature-dependent impedance spectroscopy analysis of the YSZ films with Ag electrodes showed that the in......-plane ionic conductivity was within one order of magnitude higher in films deposited with substrate bias corresponding to a decrease in grain size compared to films deposited at floating potential. This suggests that there is a significant contribution to the ionic conductivity from grain boundaries...

  13. Control of the optical properties of silicon and chromium mixed oxides deposited by reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Vergara, L., E-mail: vergara@icmm.csic.e [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Cientificas, Cantoblanco, 28049 Madrid (Spain); Galindo, R. Escobar [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Cientificas, Cantoblanco, 28049 Madrid (Spain); Centro de Microanalisis de Materiales, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Martinez, R. [AIN, Centro de Ingenieria Avanzada de Superficies, 31191 Cordovilla, Pamplona (Spain); Sanchez, O. [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Cientificas, Cantoblanco, 28049 Madrid (Spain); Palacio, C. [Departamento de Fisica Aplicada, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Albella, J.M. [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Cientificas, Cantoblanco, 28049 Madrid (Spain)

    2011-03-31

    The development of mixed-oxide thin films allows obtaining materials with better properties than those of the different binary oxides, which makes them suitable for a great number of applications in different fields, such as tribology, optics or microelectronics. In this paper we investigate the deposition of mixed chromium and silicon oxides deposited by reactive magnetron sputtering with a view to use them as optical coatings with an adjustable refractive index. These films have been characterized by means of Rutherford backscattering spectrometry, Auger electron spectroscopy, X-ray diffraction, scanning electron microscopy, Fourier-transform infrared spectroscopy and spectroscopic ellipsometry so as to determine how the deposition conditions influence the characteristics of the material. We have found that the deposition parameter whose influence determines the properties of the films to a greater extent is the amount of oxygen in the reactive sputtering gas.

  14. Viable route towards large-area 2D MoS2 using magnetron sputtering

    Science.gov (United States)

    Samassekou, Hassana; Alkabsh, Asma; Wasala, Milinda; Eaton, Miller; Walber, Aaron; Walker, Andrew; Pitkänen, Olli; Kordas, Krisztian; Talapatra, Saikat; Jayasekera, Thushari; Mazumdar, Dipanjan

    2017-06-01

    Structural, interfacial, optical, and transport properties of large-area MoS2 ultra-thin films on BN-buffered silicon substrates fabricated using magnetron sputtering are investigated. A relatively simple growth strategy is demonstrated here that simultaneously promotes superior interfacial and bulk MoS2 properties. Few layers of MoS2 are established using x-ray reflectivity, diffraction, ellipsometry, and Raman spectroscopy measurements. Layer-specific modeling of optical constants show very good agreement with first-principles calculations. Conductivity measurements reveal that few-layer MoS2 films are more conducting than many-layer films. Photo-conductivity measurements reveal that the sputter deposited MoS2 films compare favorably with other large-area methods. Our work illustrates that sputtering is a viable route for large-area device applications using transition metal dichalcogenides.

  15. HT-LiCoO2 Thin Film Positive Electrodes Prepared by RF Magnetron Sputtering

    Science.gov (United States)

    Kumar, P. Jeevan; Babu, K. Jayanth; Hussain, O. M.

    2011-07-01

    Thin films of LiCoO2 prepared by RF magnetron sputtering on Si/SiO2/Ti/Au substrates are investigated microstructural and electrochemical properties. The as deposited film shown layered with (003) preferred orientation. After annealing at 923 K in presence of O2 ambient (5×10-2 mbar), HT hexagonal phase LiCoO2 is obtained for the films deposited at O2 to Ar ratio 1:9 and at substrate temperature 523 K. LiCoO2 deposit is unambiguously shown two Raman bands at 465 and 545 cm-1 confirming layered hexagonal structure. Also, studied the performance of the LiCoO2 as positive electrode in aqueous (Pt// LiCoO2) and non-aqueous (Li// LiCoO2) Li-ion rechargeable batteries.

  16. Deposition of highly textured AlN thin films by reactive high power impulse magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Moreira, Milena A. [Department of Solid State Electronics, Ångström Laboratory, Uppsala University, Box 534, SE-752 21 Uppsala, Sweden and School of Electrical and Computer Engineering, University of Campinas, CEP 13.083-852 Campinas-SP (Brazil); Törndahl, Tobias; Katardjiev, Ilia; Kubart, Tomas, E-mail: tomas.kubart@angstrom.uu.se [Department of Solid State Electronics, Ångström Laboratory, Uppsala University, Box 534, SE-752 21 Uppsala (Sweden)

    2015-03-15

    Aluminum nitride thin films were deposited by reactive high power impulse magnetron sputtering (HiPIMS) and pulsed direct-current on Si (100) and textured Mo substrates, where the same deposition conditions were used for both techniques. The films were characterized by x-ray diffraction and atomic force microscopy. The results show a pronounced improvement in the AlN crystalline texture for all films deposited by HiPIMS on Si. Already at room temperature, the HiPIMS films exhibited a strong preferred (002) orientation and at 400 °C, no contributions from other orientations were detected. Despite the low film thickness of only 200 nm, an ω-scan full width at half maximum value of 5.1° was achieved on Si. The results are attributed to the high ionization of sputtered material achieved in HiPIMS. On textured Mo, there was no significant difference between the deposition techniques.

  17. Photocatalytic Properties of Doped TiO2 Coatings Deposited Using Reactive Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Parnia Navabpour

    2017-01-01

    Full Text Available Mechanically robust photocatalytic titanium oxide coatings can be deposited using reactive magnetron sputtering. In this article, we investigate the effect of doping on the activity of reactively sputtered TiO2. Silver, copper and stainless steel targets were used to co-deposit the dopants. The films were characterised using XRD, SEM and EDX. Adhesion and mechanical properties were evaluated using scratch testing and nano-indentation, respectively, and confirmed that the coatings had excellent adhesion to the stainless steel substrate. All coatings showed superhydrophilicity under UV irradiation. A methylene blue degradation test was used to assess their photocatalytic activity and showed all coatings to be photoactive to varying degrees, dependent upon the dopant, its concentration and the resulting coating structure. The results demonstrated that copper doping at low concentrations resulted in the coatings with the highest photocatalytic activity under both UV and fluorescent light irradiation.

  18. Magnetic properties of ZnO:Cu thin films prepared by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zhuo Shiyi; Xiong Yuying; Gu Min, E-mail: xiongyy@scnu.edu.c [Laboratory of Quantum Information Technology, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006 (China)

    2009-05-01

    ZnO films and ZnO:Cu diluted magnetic semiconductor films were prepared by radio frequency magnetron sputtering on Si (111) substrates, with targets of ZnO and Zn{sub 0.99}Cu{sub 0.01}O, respectively. The plasma emission spectra were analyzed by using a grating monochromator during sputtering. The X-ray photoelectron spectroscopy measurements indicate the existence of Zni defect in the films, and the valence state of Cu is 1+. The X-ray diffraction measurements indicate that the thin films have a hexagonal wurtzite structure and have a preferred orientation along the c-axis. The vibrating sample magnetometer measurements indicate that the sample is ferromagnetic at room temperature, and the origin of the magnetic behavior of the samples is discussed.

  19. ITO films for antireflective and antistatic tube coatings prepared by d.c. magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Loebl, H.P. [Philips Res. Labs., Aachen (Germany); Huppertz, M. [Philips Res. Labs., Aachen (Germany); Mergel, D. [University GH Essen, Fachbereich 7, Physik, D-45117, Essen (Germany)

    1996-07-01

    A reactive d.c. magnetron sputtering process with relatively high oxygen flow suitable for antireflective and antistatic (ARAS) coatings on display tubes is described. The sputtering conditions and their influence on optical, structural and electrical properties of indium tin oxide (ITO) films are discussed and compared with other ITO sputtering processes from a metallic target. Emphasis is placed on the relation between microstructure, defect structure and conductivity, and on the determination of the optimal process conditions for obtaining fine-grained films for optical applications that can withstand the 460 C heat treatment during tube assembly. As an example, a simple three-layer broadband ARAS coating is investigated, consisting of a transparent conductive ITO layer, a TiO{sub 2} layer and a SiO{sub 2} layer on top. (orig.)

  20. Nitrogen Contents on Tribological Properties of Magnetron Sputtered SiCN Coatings

    Institute of Scientific and Technical Information of China (English)

    TIETUN SUN; Y.Q. FU; J. WEI; H. J. DU

    2004-01-01

    Silicon carbonitride (SiCN) coatings were deposited on silicon and tungsten carbide substrates by co-sputtering silicon and carbon in argon and nitrogen mixture atmosphere using magnetron-sputtering system. The effect of the N2concentration, RF substrate bias voltage and target current on film deposition rate, roughness, adhesion, mechanical and tribological properties of coatings were investigated. The deposition rate was found to increase with the increasing nitrogen concentration. X-ray photoelectron spectroscopy analysis showed that high nitrogen concentration in the nitrogen-argon gas mixture enhanced the incorporation of C and N but reduced the incorporation of Si. SiCN coatings have good tribological properties at a N2 concentration of approximately 60%.

  1. Reactive DC magnetron sputtered zirconium nitride (ZrN) thin film and its characterization

    Science.gov (United States)

    Subramanian, B.; Ashok, K.; Sanjeeviraja, C.; Kuppusami, P.; Jayachandran, M.

    2008-05-01

    Zirconium nitride (ZrN) thin films were prepared by using reactive direct current (DC) magnetron sputtering onto different substrates. A good polycrystalline nature with face centered cubic structure was observed from X-ray Diffraction for ZrN thin films. The observed 'd' values from the X-ray Diffraction pattern were found to be in good agreement with the standard 'd' values (JCPDS-89-5269). An emission peak is observed at 587nm from Photoluminescence studies for the excitation at 430nm. The resistivity value (ρ) of 2.1798 (μΩ cm) was observed. ZrN has high wear resistance and low coefficient of friction. A less negative value of Ecorr and lower value of Icorr observed for ZrN / Mild Steel (MS) clearly confirm the better corrosion resistance than the bare substrate. Also the higher Rct value and lower Cdl value was observed for ZrN / MS from Nyquist - plot.

  2. Preparation and characterization of transparent conducting ZnO:W films by DC magnetron sputtering*

    Institute of Scientific and Technical Information of China (English)

    Zhang Huafu; Yang Shugang; Liu Hanfa; Yuan Changkun

    2011-01-01

    Tungsten-doped zinc oxide (ZnO:W) films with low resistivity and high transmittance were successfully deposited on glass substrates by direct current magnetron sputtering at low temperature. The deposition pressure is varied from 12 to 21 Pa. The X-ray diffraction results show that all of the deposited films are polycrystalline and have a hexagonal structure with a preferred c-axis orientation. The crystallinity, morphologies and resistivity of ZnO:W films greatly depend on deposition pressure while the optical properties including optical transmittance,optical band gap as well as refractive index are not sensitive to deposition pressure. The deposited films with an electrical resistivity as low as 1.5 × 10-4 Ω·cm, sheet resistance of 6.8 Ω/□ and an average transmittance of 91.3% in the visible range were obtained at a deposition pressure of 21 Pa and sputtering power of 130 W.

  3. Surface oxidation of vanadium dioxide films prepared by radio frequency magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    Wang Xue-Jin; Liang Chun-Jun; Guan Kang-Ping; Li De-Hua; Nie Yu-Xin; Zhu Shi-Oiu; Huang Feng; Zhang Wei-Wei; Cheng Zheng-Wei

    2008-01-01

    This paper reports that the thermochromic vanadium dioxide films were deposited on various transparent substrates by radio frequency magnetron sputtering,and then aged under circumstance for years.Samples were characterized with several different techniques such as x-ray diffraction,x-ray photoelectron spectroscopy,and Raman,when they were fresh from sputter chamber and aged after years,respectively,in order to determine their structure and composition.It finds that a small amount of sodium occurred on the surface of vanadium dioxide films,which was probably due to sodium ion diffusion from soda-lime glass when sputtering was performed at high substrate temperature.It also finds that aging for years significantly affected the noustoichiometry of vanadium dioxide films,thus inducing much change in Raman modes.

  4. Properties of Diamond-Like Carbon Films Synthesized by Dual-Target Unbalanced Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    LIU Cui; LI Guo-Qing; GOU Wei; MU Zong-Xin; ZHANG Cheng-Wu

    2004-01-01

    @@ Smooth, dense and uniform diamond-like carbon films (DLC films) for industrial applications have successfully been prepared by dual-target unbalanced magnetron sputtering and the DLC characteristics of the films are confirmed by Raman spectra. It is found that the sputtering current of target plays an important role in the DLC film deposition. Deposition rate of 3.5μm/h is obtained by using the sputtering current of 30 A. The friction coefficient of the films is 0.2-0.225 measured by using a pin-on-disc microtribometer. The structure of the films tends to have a growth of sp3 bonds content at high sputtering current. The compressive residual stress in the films increases with the increasing sputtering current of the target.

  5. The Influence of Hydrogen on the Properties of Zinc Sulfide Thin Films Deposited by Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Hang Xu

    2014-01-01

    Full Text Available Zinc sulfide thin films have been deposited with hydrogen in Ar and Ar+H2 atmosphere by radio frequency magnetron sputtering. The thickness, structural properties, composition, surface morphology, and optical and electrical properties of the films have been investigated. Effect of hydrogen on the properties of the film was studied. The results showed that hydrogen leads to better crystallinity and larger crystallite size of ZnS polycrystalline films. The band gaps of the films in Ar+H2 are about 3.48 eV compared with 3.24 eV without hydrogen. It is also demonstrated that hydrogen can result in a better stoichiometric composition of the films.

  6. Composition of nanocomposites based on thin layers of tin on porous silicon formed by magnetron sputtering

    Science.gov (United States)

    Lenshin, A. S.; Kashkarov, V. M.; Domashevskaya, E. P.; Seredin, P. V.; Ryabtsev, S. V.; Bel'tyukov, A. N.; Gil'mutdinov, F. Z.

    2017-01-01

    Using scanning electron microscopy and X-ray photoelectron spectroscopy the features of morphology and peculiarities of the surface composition of nanocomposites made of thin tin layers by magnetron sputtering formed on porous silicon with pores size of 50-150 nm. Porous silicon was obtained on n-type conductivity crystalline silicon substrate. The obtained nanocomposites were found differ between themselves by the ratio of the main phases: tin dioxide, sub-oxide and metal tin in a dependence on the thickness of the deposited tin layer. Fraction of the oxidized tin in the phase composition of composites was reduced from the surface to the bulk of the sample. Moreover, it was determined that the deposition of tin nanolayers did not result in a considerable change of the phase composition of porous silicon substrate.

  7. Structural properties of RF-magnetron sputtered Cu{sub 2}O thin films

    Energy Technology Data Exchange (ETDEWEB)

    Azanza Ricardo, C.L.; D' Incau, M.; Leoni, M. [Department of Materials Engineering and Industrial Technologies, University of Trento, 38123 via Mesiano 77, Trento (Italy); Malerba, C. [ENEA, Casaccia Research Center, via Anguillarese 301, 00123 Roma (Italy); Department of Materials Engineering and Industrial Technologies, University of Trento, 38123 via Mesiano 77, Trento (Italy); Mittiga, A. [ENEA, Casaccia Research Center, via Anguillarese 301, 00123 Roma (Italy); Scardi, P., E-mail: Paolo.Scardi@unitn.it [Department of Materials Engineering and Industrial Technologies, University of Trento, 38123 via Mesiano 77, Trento (Italy)

    2011-10-31

    Cuprous oxide thin films were produced on soda-lime glass substrates using reactive RF-magnetron sputtering. The influence of deposition parameters and temperature on composition and structural properties of the single layers was extensively studied using X-ray diffraction. The control over microstructure and residual stresses is possible by changing reactive gas pressure and deposition temperature. Fiber textured Cu2O films showing a [100] preferred orientation and a fraction of untextured domains can be obtained: suitable modeling taking this microstructure into account shows the presence of a strong compressive stress decreasing with the temperature. Highly reproducible films can be obtained, whose microstructure is preserved when sputtering on tungsten and zinc oxide substrates.

  8. Cu Films Deposited by Unbalanced Magnetron Sputtering Enhanced by ICP and External Magnetic Field Confinement

    Institute of Scientific and Technical Information of China (English)

    QI Xuelian; REN Chunsheng; MA Tengcai; WANG Younian

    2008-01-01

    Metallic copper(Cu) films were deposited on a Si (100) substrate by unbalanced magnetron sputtering enhanced by radio-frequency plasma and external magnetic field confine-ment. The morphology and structure of the films were examined by scanning electron microscopy (SEM), atomic force microscope (AFM) and X-ray diffraction (XRD). The surface average rough-ness of the deposited Cu films was characterized by AFM data and resistivity was measured by a four-point probe. The results show that the Cu films deposited with radio-frequency discharge enhanced ionization and external magnetic field confinement have a smooth surface, low surface roughness and low resistivity. The reasons may be that the radio-frequency discharge and external magnetic field enhance the plasma density, which further improves the ion bombardment effect under the same bias voltage conditions. Ion bombardment can obviously influence the growth features and characteristics of the deposited Cu films.

  9. Direct current magnetron sputter-deposited ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hoon, Jian-Wei [Faculty of Engineering, Multimedia University, Persiaran Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Chan, Kah-Yoong, E-mail: kychan@mmu.edu.my [Faculty of Engineering, Multimedia University, Persiaran Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Krishnasamy, Jegenathan; Tou, Teck-Yong [Faculty of Engineering, Multimedia University, Persiaran Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Knipp, Dietmar [School of Engineering and Science, Jacobs University Bremen, 28759 Bremen (Germany)

    2011-01-15

    Zinc oxide (ZnO) is a very promising electronic material for emerging transparent large-area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 150 nm to 750 nm were deposited on glass substrates. The deposition pressure and the substrate temperature were varied from 12 mTorr to 25 mTorr, and from room temperature to 450 deg. C, respectively. The influence of the film thickness, deposition pressure and the substrate temperature on structural and optical properties of the ZnO films was investigated using atomic force microscopy (AFM) and ultraviolet-visible (UV-Vis) spectrometer. The experimental results reveal that the film thickness, deposition pressure and the substrate temperature play significant role in the structural formation and the optical properties of the deposited ZnO thin films.

  10. Particle visualization in high-power impulse magnetron sputtering. II. Absolute density dynamics

    Energy Technology Data Exchange (ETDEWEB)

    Britun, Nikolay, E-mail: nikolay.britun@umons.ac.be; Palmucci, Maria; Konstantinidis, Stephanos [Chimie des Interactions Plasma-Surface (ChIPS), CIRMAP, Université de Mons, 23 Place du Parc, B-7000 Mons (Belgium); Snyders, Rony [Chimie des Interactions Plasma-Surface (ChIPS), CIRMAP, Université de Mons, 23 Place du Parc, B-7000 Mons (Belgium); Materia Nova Research Center, Parc Initialis, B-7000 Mons (Belgium)

    2015-04-28

    Time-resolved characterization of an Ar-Ti high-power impulse magnetron sputtering discharge has been performed. The present, second, paper of the study is related to the discharge characterization in terms of the absolute density of species using resonant absorption spectroscopy. The results on the time-resolved density evolution of the neutral and singly-ionized Ti ground state atoms as well as the metastable Ti and Ar atoms during the discharge on- and off-time are presented. Among the others, the questions related to the inversion of population of the Ti energy sublevels, as well as to re-normalization of the two-dimensional density maps in terms of the absolute density of species, are stressed.

  11. Particle visualization in high-power impulse magnetron sputtering. I. 2D density mapping

    Energy Technology Data Exchange (ETDEWEB)

    Britun, Nikolay, E-mail: nikolay.britun@umons.ac.be; Palmucci, Maria; Konstantinidis, Stephanos [Chimie des Interactions Plasma-Surface (ChIPS), CIRMAP, Université de Mons, 23 Place du Parc, B-7000 Mons (Belgium); Snyders, Rony [Chimie des Interactions Plasma-Surface (ChIPS), CIRMAP, Université de Mons, 23 Place du Parc, B-7000 Mons (Belgium); Materia Nova Research Center, Parc Initialis, B-7000 Mons (Belgium)

    2015-04-28

    Time-resolved characterization of an Ar-Ti high-power impulse magnetron sputtering discharge has been performed. This paper deals with two-dimensional density mapping in the discharge volume obtained by laser-induced fluorescence imaging. The time-resolved density evolution of Ti neutrals, singly ionized Ti atoms (Ti{sup +}), and Ar metastable atoms (Ar{sup met}) in the area above the sputtered cathode is mapped for the first time in this type of discharges. The energetic characteristics of the discharge species are additionally studied by Doppler-shift laser-induced fluorescence imaging. The questions related to the propagation of both the neutral and ionized discharge particles, as well as to their spatial density distributions, are discussed.

  12. Surface and Electrical Properties of NiCr Thin Films Prepared by DC Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    ZHOU Jicheng; TIAN Li; YAN Jianwu

    2008-01-01

    Several batches of NiCr alloy thin films with different thickness were prepared in a multi-targets magnetron sputtering apparatus by changing sputtering time while keeping sputtering target power of Ni and Cr fixed. Then the as-deposited films were characterized by energy-dispersive X-Ray spectrometer (EDX),Atomic Force Microscope (AFM) and four-point probe (FPP) to measure surface grain size, roughness and sheet resistance. The film thickness was measured by Alpha-Step IQ Profilers. The thickness dependence of surface roughness, lateral grain size and resistivity was also studied. The experimental results show that the grain size increases with film thickness and the surface roughness reaches the order of nanometer at all film thickness. The as-deposited film resistivity decreases with film thickness.

  13. Synthesis and characterization of DC magnetron sputtered nano structured molybdenum thin films

    Science.gov (United States)

    Rondiya, S. R.; Rokade, A. V.; Jadhavar, A. A.; Pandharkar, S. M.; Kulkarni, R. R.; Karpe, S. D.; Diwate, K. D.; Jadkar, S. R.

    2016-04-01

    Molybdenum (Mo) thin films were deposited on corning glass (#7059) substrates using DC magnetron sputtering system. The effect of substrate temperature on the structural, morphology and topological properties have been investigated. Films were characterized by variety of techniques such as low angle x-ray diffraction (low angle XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM). The low angle XRD analysis revealed that the synthesized Mo films are nanocrystalline having cubic crystal structure with (110) preferential orientation. The microstructure of the deposited Mo thin films observed with FE-SEM images indicated that films are homogeneous and uniform with randomly oriented leaf shape morphology. The AFM analysis shows that with increase in substrate temperature the rms roughness of Mo films increases. The obtained results suggest that the synthesized nanostructured Mo thin films have potential application as a back contact material for high efficiency solar cells like CdTe, CIGS, CZTS etc.

  14. Optical properties and structures of silver thin films deposited by magnetron sputtering with different thicknesses

    Institute of Scientific and Technical Information of China (English)

    Xilian Sun; Ruijin Hong; Haihong Hou; Zhengxiu Fan; Jianda Shao

    2006-01-01

    A series of thin Ag films with different thicknesses grown under identical conditions are analyzed by means of spectrophotometer. From these measurements the values of refractive index and extinction coefficient are calculated. The films are deposited onto BK7 glass substrates by direct current (DC) magnetron sputtering. It is found that the optical properties of the Ag films can be affected by films thickness.Below critical thickness of 17 nm, which is the thickness at which Ag films form continuous films, the optical properties and constants vary significantly with thickness increasing and then tend to a stable value up to about 40 nm. At the same time, X-ray diffraction measurement is carried out to examine the microstructure evolution of Ag films as a function of films thickness. The relation between optical properties and microstructure is discussed.

  15. Fabrication of Diamond-like Carbon Films by Ion Assisted Middle Frequency Unbalanced Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yi-chen; SUN Shao-ni; ZHOU Yi; MA Sheng-ge; BA De-chun

    2006-01-01

    Diamond-like carbon (DLC) films are deposited by the Hall ion source assisted by the mid-frequency unbalanced magnetron sputtering technique. The effects of the substrate voltage bias, the substrate temperature, the Hall discharging current and the argon/nitrogen ratio on the DLC film's performance were studied. The experimental results show that the film's surface roughness, the hardness and the Young's modulus increase firstly and then decrease with the bias voltage incrementally increases. Also when the substrate temperature rises, the surface roughness of the film varies slightly, but its hardness and Young's modulus firstly increase followed by a sharp decrease when the temperature surpassing 120 ℃. With the Hall discharging current incrementally rising, the hardness and Young's modulus of the film decrease and the surface roughness of the film on 316L stainless steel firstly decreased and then remains constant.

  16. Synthesis of ReN3 Thin Films by Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    G. Soto

    2014-01-01

    Full Text Available In this work ReNx films were prepared by reactive magnetron sputtering at room temperature and deposited on a silicon wafer. It was found that the diffractograms of the nitrogen-rich rhenium film are consistent with those produced by high-pressure high-temperature methods, under the assumption that the film is oriented on the substrate. Using density functional calculations it was found that the composition of this compound could be ReN3, instead of ReN2, as stated on previous works. The ReN3 compound fits in the Ama2 (40 orthorhombic space group, and due to the existence of N3 anions between Re layers it should be categorized as an azide. The material is exceptionally brittle and inherently unstable under indentation testing.

  17. Magnetic properties of ZnO:Cu thin films prepared by RF magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    Zhuo Shiyi; Xiong Yuying; Gu Min

    2009-01-01

    ZnO films and ZnO:Cu diluted magnetic semiconductor films were prepared by radio frequency magnetron sputtering on Si (111) substrates, with targets of ZnO and Zn0.99Cu0.01 O, respectively. The plasma emission spectra were analyzed by using a grating monochromator during sputtering. The X-ray photoelectron spectroscopy measurements indicate the existence of Zni defect in the films, and the valence state of Cu is 1. The X-ray diffraction measurements indicate that the thin films have a hexagonal wurtzite structure and have a preferred orientation along the c-axis. The vibrating sample magnetometer measurements indicate that the sample is ferromagnetic at room temperature, and the origin of the magnetic behavior of the samples is discussed.

  18. The Gibbs Thomson effect in magnetron-sputtered austenitic stainless steel films

    Science.gov (United States)

    Cusenza, S.; Borchers, C.; Carpene, E.; Schaaf, P.

    2007-03-01

    Magnetron sputtering of austenitic stainless steel AISI 316, which has a face-centred cubic structure (γ), leads to films exhibiting a body-centred cubic (α) structure or a mixture of α- and γ-phases. The microstructure of the deposited films was studied by Mössbauer spectroscopy, x-ray diffraction and transmission electron microscopy. With increasing deposition temperature a phase transformation from α- to γ-phase was observed in these films. Instantaneous recording of the electromotive force shows that nickel content and deposition temperature are crucial factors for phase stability and phase formation. In room temperature deposited stainless steel films, the phase transformation after vacuum annealing can be described by the Johnson-Mehl-Avrami kinetic model. These phase transformations in stainless steel films during annealing can be explained with the Gibbs-Thomson effect, where the grain boundary energy raises the Gibbs free energy.

  19. The Gibbs-Thomson effect in magnetron-sputtered austenitic stainless steel films

    Energy Technology Data Exchange (ETDEWEB)

    Cusenza, S [Universitaet Goettingen, II Physikalisches Institut, Friedrich-Hund-Platz 1, 37077 Goettingen (Germany); Borchers, C [Universitaet Goettingen, II Physikalisches Institut, Friedrich-Hund-Platz 1, 37077 Goettingen (Germany); Carpene, E [Politecnico di Milano, Dipartimento di Fisica, Piazza Leonardo da Vinci 32, 20133 Milan (Italy); Schaaf, P [Universitaet Goettingen, II Physikalisches Institut, Friedrich-Hund-Platz 1, 37077 Goettingen (Germany)

    2007-03-14

    Magnetron sputtering of austenitic stainless steel AISI 316, which has a face-centred cubic structure ({gamma}), leads to films exhibiting a body-centred cubic ({alpha}) structure or a mixture of {alpha}- and {gamma}-phases. The microstructure of the deposited films was studied by Moessbauer spectroscopy, x-ray diffraction and transmission electron microscopy. With increasing deposition temperature a phase transformation from {alpha}- to {gamma}-phase was observed in these films. Instantaneous recording of the electromotive force shows that nickel content and deposition temperature are crucial factors for phase stability and phase formation. In room temperature deposited stainless steel films, the phase transformation after vacuum annealing can be described by the Johnson-Mehl-Avrami kinetic model. These phase transformations in stainless steel films during annealing can be explained with the Gibbs-Thomson effect, where the grain boundary energy raises the Gibbs free energy.

  20. Compression and strong rarefaction in high power impulse magnetron sputtering discharges

    Energy Technology Data Exchange (ETDEWEB)

    Horwat, David; Anders, Andre

    2010-11-11

    Gas compression and strong rarefaction have been observed for high power impulse magnetron sputtering (HIPIMS) discharges using a copper target in argon. Time-resolved ion saturation currents of 35 probes were simultaneously recorded for HIPIMS discharges operating far above the self-sputtering runaway threshold. The argon background pressure was a parameter for the evaluation of the spatial and temporal development of the plasma density distribution. The data can be interpreted by a massive onset of the sputtering flux (sputter wind) that causes a transient densification of the gas, followed by rarefaction and the replacement of gas plasma by the metal plasma of sustained self-sputtering. The plasma density pulse follows closely the power pulse at low pressure. At high pressure, the relatively remote probes recorded a density peak only after the discharge pulse, indicative for slow, diffusive ion transport.

  1. Effects of Annealing on TiN Thin Film Growth by DC Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Azadeh Jafari

    2014-07-01

    Full Text Available We have reviewed the deposition of titanium nitride (TiN thin films on stainless steel substrates by a DC magnetron sputtering method and annealing at different annealing temperatures of 500, 600, and 700°C for 120 min in nitrogen/argon atmospheres. Effects of annealing temperatures on the structural and the optical properties of TiN films were investigated using X-ray diffraction (XRD, atomic force microscope (AFM, field emission scanning electron microscopy (FESEM, and UV-VIS spectrophotometer. Our experimental studies reveal that the annealing temperature appreciably affected the structures, crystallite sizes, and reflection of the films. By increasing the annealing temperature to 700°C crystallinity and reflection of the film increase. These results suggest that annealed TiN films can be good candidate for tokamak first wall due to their structural and optical properties.

  2. Characteristics of W Doped Nanocrystalline Carbon Films Prepared by Unbalanced Magnetron Sputtering.

    Science.gov (United States)

    Park, Yong Seob; Park, Chul Min; Kim, Nam-Hoon; Kim, Jae-Moon

    2016-05-01

    Nanocrystalline tungsten doped carbon (WC) films were prepared by unbalanced magnetron sputtering. Tungsten was used as the doping material in carbon thin films with the aim of application as a contact strip in an electric railway. The structural, physical, and electrical properties of the fabricated WC films with various DC bias voltages were investigated. The films had a uniform and smooth surface. Hardness and frication characteristics of the films were improved, and the resistivity and sheet resistance decreased with increasing negative DC bias voltage. These results are associated with the nanocrystalline WC phase and sp(2) clusters in carbon networks increased by ion bombardment enhanced with increasing DC bias voltage. Consequently, the increase of sp(2) clusters containing WC nanocrystalline in the carbon films is attributed to the improvement in the physical and electrical properties.

  3. Structural and optical properties of CdO thin films deposited by RF magnetron sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, G. Anil, E-mail: anilhcu@gmail.com; Reddy, M. V. Ramana, E-mail: anilhcu@gmail.com [Department of Physics, Osmania University, Hyderabad-500007 (India); Reddy, Katta Narasimha, E-mail: anilhcu@gmail.com [Department of Physics, Mahatma Gandhi University, Nalgonda-508003 (India)

    2014-04-24

    Cadmium oxide (CdO) thin films were deposited on glass substrate by r.f. magnetron sputtering technique using a high purity (99.99%) Cd target of 2-inch diameter and 3 mm thickness in an Argon and oxygen mixed atmosphere with sputtering power of 50W and sputtering pressure of 2×10{sup −2} mbar. The prepared films were characterized by X-ray diffraction (XRD), optical spectroscopy and scanning electron microscopy (SEM). The XRD analysis reveals that the films were polycrystalline with cubic structure. The visible range transmittance was found to be over 70%. The optical band gap increased from 2.7 eV to2.84 eV with decrease of film thickness.

  4. Tribological behavior of magnetron sputtering CrMoN/MoS2 composite coatings

    Institute of Scientific and Technical Information of China (English)

    Yuelan DI; Zhihai CAI; Ping ZHANG; Zhen YANG; Qi LI; Wei SHEN

    2012-01-01

    CrMoN composite coatings were deposited on the surface of the stainless steel by magnetron sputtering,then were treated by low temperature ion sulfuration.FESEM equipped with EDX was adopted to analyze the morphologies and compositions of the surface,cross-section and worn scar of the sulfuration layer.The valence states of the film surface were detected by XPS.The nano-hardness and nano-modulus of the layer were measured by a nano tester.The results of the friction and wear show that the CrMoN/MoS2 composite coating is a kind of ideal solid lubrication layer and possess an excellent antifriction and wear-resistance.

  5. Enhancement of bioactivity on medical polymer surface using high power impulse magnetron sputtered titanium dioxide film.

    Science.gov (United States)

    Yang, Yi-Ju; Tsou, Hsi-Kai; Chen, Ying-Hung; Chung, Chi-Jen; He, Ju-Liang

    2015-12-01

    This study utilizes a novel technique, high power impulse magnetron sputtering (HIPIMS), which provides a higher ionization rate and ion bombardment energy than direct current magnetron sputtering (DCMS), to deposit high osteoblast compatible titanium dioxide (TiO2) coatings with anatase (A-TiO2) and rutile (R-TiO2) phases onto the biomedical polyetheretherketone (PEEK) polymer substrates at low temperature. The adhesions of TiO2 coatings that were fabricated using HIPIMS and DCMS were compared. The in vitro biocompatibility of these coatings was confirmed. The results reveal that HIPIMS can be used to prepare crystallinic columnar A-TiO2 and R-TiO2 coatings on PEEK substrate if the ratio of oxygen to argon is properly controlled. According to a tape adhesion test, the HIPIMS-TiO2 coatings had an adhesion grade of 5B even after they were immersed in simulated body fluid (SBF) environments for 28days. Scratch tests proved that HIPIMS-TiO2 coatings undergo cohesive failure. These results demonstrate that the adhesive force between HIPIMS-TiO2 coating/PEEK is stronger than that between DCMS-TiO2 coating/PEEK. After a long period (28days) of immersion in SBF, a bone-like crystallinic hydroxyapatite layer with a corresponding Ca/P stoichiometry was formed on both HIPIMS-TiO2. The osteoblast compatibility of HIPIMS-TiO2 exceeded that of the bare PEEK substrate. It is also noticeable that the R-TiO2 performed better in vitro than the A-TiO2 due to the formation of many negatively charged hydroxyl groups (-OH(-)) groups on R-TiO2 (110) surface. In summary, the HIPIMS-TiO2 coatings satisfied the requirements for osseointegration, suggesting the possibility of using HIPIMS to modify the PEEK surface with TiO2 for spinal implants.

  6. Natural fiber composites with EMI shielding function fabricated using VARTM and Cu film magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Xia, Changlei [Department of Mechanical and Energy Engineering, University of North Texas, Denton, TX 76203 (United States); Ren, Han [Department of Electrical Engineering, University of North Texas, Denton, TX 76203 (United States); Shi, Sheldon Q., E-mail: Sheldon.Shi@unt.edu [Department of Mechanical and Energy Engineering, University of North Texas, Denton, TX 76203 (United States); Zhang, Hualiang [Department of Electrical Engineering, University of North Texas, Denton, TX 76203 (United States); Cheng, Jiangtao [Department of Mechanical Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061 (United States); Cai, Liping [Department of Mechanical and Energy Engineering, University of North Texas, Denton, TX 76203 (United States); Chen, Kathleen; Tan, Hwa-Shen [Texas Academy of Mathematics and Science, University of North Texas, Denton, TX 76203 (United States)

    2016-01-30

    Graphical abstract: - Highlights: • Natural-fiber-reinforced composites with electromagnetic shielding were fabricated. • Copper magnetron sputtering was applied on the composite surfaces. • The highest electromagnetic interference shielding effective reached 48.3 dB. • The water contact angle changed from 49.6° to 129.5° after 0.5-h sputtering. - Abstract: To fabricate kenaf fiber composites with electromagnetic interference (EMI) shielding function, the technique of vacuum-assisted resin transfer molding (VARTM) and Cu film magnetron sputtering were employed. The EMI shielding effectiveness (SE) and composite surface characteristics were examined with PNA Network Analyzer, Quanta 200 environmental scanning electron microscope and OCA20 contact angle meter. After being Cu-sputter coated for 0.5 h, 1 h, 2 h, and 3 h, the EMI SE values were increased to be 23.8 dB, 32.5 dB, 43.3 dB, and 48.3 dB, which denoted 99.5799%, 99.9437%, 99.9953%, or 99.9985% incident signal was blocked, respectively. The SEM observations revealed that the smoother surface of the composites was obtained by longer time sputtering, resulting in the SE improvement. The contact angle increased from 49.6° to 129.5° after 0.5 h sputtering, which indicated that the coated Cu film dramatically improved the hydrophobic property of composite. When the coating time increased to 3 h, the contact angle decreased to 51.0° because the composite surface roughness decreased with the increase in coating time.

  7. Coating of titanium implants with boron nitride by RF-magnetron sputtering

    Indian Academy of Sciences (India)

    CEREN GÖKMENOGLU; NURDAN ÖZMERIÇ; GAYE ÇAKAL; NIHAN DÖKMETAS; CANSU ERGENE; BILGIN KAFTANOGLU

    2016-09-01

    Surface modification is necessary for titanium implants since it is unable to induce bone apposition. The beneficial effects of boron on bone formation, composition and physical properties make it suitable as a coating material. In the present study, surface properties of boron nitride (BN) coating on titanium implants were evaluated. Twenty-four implants and 12 abutments were coated with BN by RF-magnetron sputtering system. ATR–FTIR measurements were conducted to assess surface chemistry and morphology of BN-coated implants. Adhesion tests were performed by CSM nanoscratch test device to determine adhesion of BN to titanium surface. Surface profilometry and atomic force microscopy (AFM) was used to evaluate surface roughness.Mean roughness values were calculated. Contact angle measurements were done for evaluation of wettability. Surface characterization of coated implants was repeated after RF power of the system was increased and voltage values were changed to evaluate if these settings have an impact on coating quality. Three different voltage values were used for this purpose. Hexagonal-BN was determined in FTIR spectra. RF-coating technique provided adequate adherence of BN coatings to the titanium surface. A uniform BN coating layer was formed on the titanium implants with no deformation on the titanium surface. Similar roughness values were maintained after BN coating procedure. Before coating, the contact angles of the implants were in between 63$^{\\circ}$ and 79$^{\\circ}$, whereas BN coated implants’ contact angles ranged between 46$^{\\circ}$ and 67$^{\\circ}$. BN-coated implant surfaces still have hydrophilic characteristics. The change in voltage values seemed to affect the surface coating characteristics. Especially, the phase of the BN coating was different when different voltages were used. According to our results, BN coating can be sufficiently performed on pretreated implant surfaces and the characteristicsof BN coated surfaces can be

  8. Plasma potential of a moving ionization zone in DC magnetron sputtering

    Science.gov (United States)

    Panjan, Matjaž; Anders, André

    2017-02-01

    Using movable emissive and floating probes, we determined the plasma and floating potentials of an ionization zone (spoke) in a direct current magnetron sputtering discharge. Measurements were recorded in a space and time resolved manner, which allowed us to make a three-dimensional representation of the plasma potential. From this information we could derive the related electric field, space charge, and the related spatial distribution of electron heating. The data reveal the existence of strong electric fields parallel and perpendicular to the target surface. The largest E-fields result from a double layer structure at the leading edge of the ionization zone. We suggest that the double layer plays a crucial role in the energization of electrons since electrons can gain several 10 eV of energy when crossing the double layer. We find sustained coupling between the potential structure, electron heating, and excitation and ionization processes as electrons drift over the magnetron target. The brightest region of an ionization zone is present right after the potential jump, where drifting electrons arrive and where most local electron heating occurs. The ionization zone intensity decays as electrons continue to drift in the Ez × B direction, losing energy by inelastic collisions; electrons become energized again as they cross the potential jump. This results in the elongated, arrowhead-like shape of the ionization zone. The ionization zone moves in the -Ez × B direction from which the to-be-heated electrons arrive and into which the heating region expands; the zone motion is dictated by the force of the local electric field on the ions at the leading edge of the ionization zone. We hypothesize that electron heating caused by the potential jump and physical processes associated with the double layer also apply to magnetrons at higher discharge power, including high power impulse magnetron sputtering.

  9. SiNx coatings deposited by reactive high power impulse magnetron sputtering: Process parameters influencing the residual coating stress

    Science.gov (United States)

    Schmidt, S.; Hänninen, T.; Wissting, J.; Hultman, L.; Goebbels, N.; Santana, A.; Tobler, M.; Högberg, H.

    2017-05-01

    The residual coating stress and its control is of key importance for the performance and reliability of silicon nitride (SiNx) coatings for biomedical applications. This study explores the most important deposition process parameters to tailor the residual coating stress and hence improve the adhesion of SiNx coatings deposited by reactive high power impulse magnetron sputtering (rHiPIMS). Reactive sputter deposition and plasma characterization were conducted in an industrial deposition chamber equipped with pure Si targets in N2/Ar ambient. Reactive HiPIMS processes using N2-to-Ar flow ratios of 0 and 0.28-0.3 were studied with time averaged positive ion mass spectrometry. The coatings were deposited to thicknesses of 2 μm on Si(001) and to 5 μm on polished CoCrMo disks. The residual stress of the X-ray amorphous coatings was determined from the curvature of the Si substrates as obtained by X-ray diffraction. The coatings were further characterized by X-ray photoelectron spectroscopy, scanning electron microscopy, and nanoindentation in order to study their elemental composition, morphology, and hardness, respectively. The adhesion of the 5 μm thick coatings deposited on CoCrMo disks was assessed using the Rockwell C test. The deposition of SiNx coatings by rHiPIMS using N2-to-Ar flow ratios of 0.28 yield dense and hard SiNx coatings with Si/N ratios <1. The compressive residual stress of up to 2.1 GPa can be reduced to 0.2 GPa using a comparatively high deposition pressure of 600 mPa, substrate temperatures below 200 °C, low pulse energies of <2.5 Ws, and moderate negative bias voltages of up to 100 V. These process parameters resulted in excellent coating adhesion (ISO 0, HF1) and a low surface roughness of 14 nm for coatings deposited on CoCrMo.

  10. Properties of amorphous Si-rich silicon nitride prepared by rf-magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Vetter, M.; Rojahn, M. [Stuttgart Univ. (Germany). Inst. fuer Physikalische Elektronik

    2000-02-14

    This article investigates the physics underlying field effect passivation of p-type Si surfaces coated with SiN{sub x}(:H) of various Si contents. We find a correlation between the effective lifetime of minority carriers in p-type Si passivated with SiN{sub x}, on the one hand, and the dark dc-conductivity data of corresponding a-SiN{sub x}-films with different composition, on the other hand. By increasing the amount of Si in a-SiN{sub x}(:H) structures the bandgap decreases from about 5 to 2 eV. As a result, the dark dc-conductivity rises by several orders of magnitude. The conductivity prefactors and the activation energies as calculated from the conductivity versus temperature data obey the Meyer-Neldel relation with an axio-intercept of about 10{sup -7} ({omega}cm){sup -1} and a slope of about 35 meV. Thus, Si-rich a-SiN{sub x}(:H) films behave like a defect doped n-type semiconductor. The activation energy of the conductance in films with the same composition changes with the hydrogen content. A minimum in the activation energy correlates with a minimum of the surface recombination velocity at the a-SiN{sub x}/p-Si interface. We ascribe both effects to a variation of the Fermi level in the films. (orig.)

  11. Crescimento de filmes finos cristalinos de dióxido de titânio por sistemas magnetron sputtering.

    OpenAIRE

    Diego Alexandre Duarte

    2010-01-01

    Nesse trabalho é reportado o crescimento de filmes finos de dióxido de titânio (TiO2) por duas técnicas assistidas a plasma chamadas magnetron sputtering convencional (MSC) e magnetron sputtering catodo oco (MSCO). O dióxido de titânio foi crescido sobre substratos de silício, variando alguns parâmetros de plasma como, por exemplo, a distância axial (z0) e a concentração de oxigênio na mistura Ar+O2. As amostras foram caracterizadas por perfilometria, microscopia de força atômica (MFA) e difr...

  12. Microstructural Comparisons of Ultra-Thin Cu Films Deposited by Ion-Beam and dc-Magnetron Sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Prater, W.

    2004-11-04

    We report and contrast both the electrical resistance and the microstructure of copper thin films deposited in an oxygen containing atmosphere by ion-beam and dc-magnetron sputtering. For films with thicknesses 5 nm or less, the resistivity of the Cu films is minimized at oxygen concentrations ranging from 0.2% to 1% for dc-magnetron sputtering and 6% to 10% for ion beam sputtering. Films sputtered under both conditions show a similar decrease of interface roughness with increasing oxygen concentration, although the magnetron deposited films are smoother. The dc-magnetron produced films have higher resistivity, have smaller Cu grains, and contain a higher concentration of cuprous oxide particles. We discuss the mechanisms leading to the grain refinement and the consequent reduced resistivity in both types of films.

  13. Residual stress and texture in Aluminum doped Zinc Oxide layers deposited by reactive radio frequency magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Azanza Ricardo, C.L., E-mail: Cristy.Azanza@ing.unitn.it [Department of Civil, Environmental and Mechanical Engineering, University of Trento, 38123 via Mesiano 77, Trento (Italy); Pastorelli, M.; D' Incau, M. [Department of Civil, Environmental and Mechanical Engineering, University of Trento, 38123 via Mesiano 77, Trento (Italy); Aswath, P. [College of Engineering, University of Texas at Arlington, TX (United States); Scardi, P. [Department of Civil, Environmental and Mechanical Engineering, University of Trento, 38123 via Mesiano 77, Trento (Italy)

    2016-04-30

    Aluminum doped Zinc Oxide thin films were deposited on standard soda-lime substrates by reactive radio frequency magnetron sputtering. Residual stress and texture were studied by X-ray diffraction, while X-ray Absorption Near Edge Spectroscopy provided information on the Al environment in the best performing thin films. The influence of deposition parameters on structural and microstructural properties is discussed. A correlation between microstructure and residual stress state with electrical and optical properties is proposed. - Highlights: • Al doped ZnO thin films were obtained by reactive radio frequency magnetron sputtering. • Correlation of stresses and texture with electrical and optical properties is shown. • Homogeneous and stress-free thin-films are the best performing ones. • XANES confirmed the doping mechanism and excluded some spurious phases.

  14. Synthesizing mixed phase titania nanocomposites with enhanced photoactivity and redshifted photoresponse by reactive DC magnetron sputtering

    Science.gov (United States)

    Chen, Le

    Recent work points out the importance of the solid-solid interface in explaining the high photoactivity of mixed phase TiO2 catalysts. The goal of this research was to probe the synthesis-structure-function relationships of the solid-solid interfaces created by the reactive direct current (DC) magnetron sputtering of titanium dioxide. I hypothesize that the reactive DC magnetron sputtering is a useful method for synthesizing photo-catalysts with unique structure including solid-solid interfaces and surface defects that are associated with enhanced photoreactivity as well as a photoresponse shifted to longer wavelengths of light. I showed that sputter deposition provides excellent control of the phase and interface formation as well as the stoichiometry of the films. I explored the effects exerted by the process parameters of pressure, oxygen partial pressure, target power, substrate bias (RF), deposition incidence angle, and post annealing treatment on the structural and functional characteristics of the catalysts. I have successfully made pure and mixed phase TiO2 films. These films were characterized with UV-Vis, XPS, AFM, SEM, TEM, XRD and EPR, to determine optical properties, elemental stoichiometry, surface morphology, phase distribution and chemical coordination. Bundles of anatase-rutile nano-columns having high densities of dual-scale of interfaces among and within the columns are fabricated. Photocatalytic performance of the sputtered films as measured by the oxidation of the pollutant, acetaldehyde, and the reduction of CO2 for fuel (CH4) production was compared (normalized for surface area) to that of mixed phase TiO2 fabricated by other methods, including flame hydrolysis powders, and solgel deposited TiO 2 films. The sputtered mixed phase materials were far superior to the commercial standard (Degussa P25) and solgel TiO2 based on gas phase reaction of acetaldehyde oxidation under UV light and CO2 reduction under both UV and visible illuminations. The

  15. Fabrication and characterization of anatase/rutile–TiO2 thin films by magnetron sputtering: a review

    Directory of Open Access Journals (Sweden)

    Sakae Tanemura, Lei Miao, Wilfried Wunderlich, Masaki Tanemura, Yukimasa Mori, Shoichi Toh and Kenji Kaneko

    2005-01-01

    Full Text Available This review article summarizes briefly some important achievements of our recent reserach on anatase and/or rutile TiO2 thin films, fabricated by helicon RF magnetron sputtering, with good crystal quality and high density, and gives the-state-of-the-art of the knowledge on systematic interrelationship for fabrication conditions, crystal structure, composition, optical properties, and bactericidal abilities, and on the effective surface treatment to improve the optical reactivity of the obtained films.

  16. MgB{sub 2} superconducting thin films sequentially fabricated using DC magnetron sputtering and thermionic vacuum arc method

    Energy Technology Data Exchange (ETDEWEB)

    Okur, S. [Physics Department, Izmir Institute of Technology (Turkey)], E-mail: salihokur@iyte.edu.tr; Kalkanci, M. [Material Science Program, Izmir Institute of Technology (Turkey); Pat, S.; Ekem, N.; Akan, T. [Physics Department, Osmangazi University (Turkey); Balbag, Z. [Department of Science and Mathematics Education, Osmangazi University (Turkey); Musa, G. [Plasma and Radiation, National Institute for Physics of Laser (Romania); Tanoglu, M. [Mechanical Engineering Department, Izmir Institute of Technology (Turkey)

    2007-11-01

    In this work, we discuss fabrication and characterization of MgB{sub 2} thin films obtained by sequential deposition and annealing of sandwich like Mg/B/Mg thin films on glass substrates. Mg and B films were prepared using DC magnetron sputtering and thermionic vacuum arc techniques, respectively. The MgB{sub 2} thin films showed superconducting critical transition at 33 K after annealing at 650 deg. C.

  17. The Photocatalytic Activity and Compact Layer Characteristics of TiO2 Films Prepared Using Radio Frequency Magnetron Sputtering

    OpenAIRE

    Chang, H. C.; Huang, H. H.; Wu, C. Y.; Hsu, R. Q.; C. Y. Hsu

    2014-01-01

    TiO2 compact layers are used in dye-sensitized solar cells (DSSCs) to prevent charge recombination between the electrolyte and the transparent conductive substrate (indium tin oxide, ITO; fluorine-doped tin oxide, FTO). Thin TiO2 compact layers are deposited onto ITO/glass by means of radio frequency (rf) magnetron sputtering, using deposition parameters that ensure greater photocatalytic activity and increased DSSC conversion efficiency. The photoinduced decomposition of methylene blue (MB) ...

  18. Morphology control of tungsten nanorods grown by glancing angle RF magnetron sputtering under variable argon pressure and flow rate

    Science.gov (United States)

    Khedir, Khedir R.; Kannarpady, Ganesh K.; Ishihara, Hidetaka; Woo, Justin; Ryerson, Charles; Biris, Alexandru S.

    2010-09-01

    Morphologically novel tungsten nanorods (WNRs) with the co-existence of two crystalline phases, α-W (thermodynamically stable) and β-W, were fabricated by glancing angle RF magnetron sputtering technique under various Ar pressures and flow rates. For these nanorods, a significant variation in their morphology and surface roughness was observed. These structures could be useful in a wide range of applications such as field emission, robust superhydrophobic coatings, energy, and medicine.

  19. PREPARATION AND SURFACE CHARACTERIZATION OF TiO2 THIN FILMS ON GLASS BY MAGNETRON SPUTTERING METHOD

    Institute of Scientific and Technical Information of China (English)

    L.S. Yin; H. Shen; J.X. Zhang

    2002-01-01

    Ti thin films were firstly deposited on glass substrates by magnetron sputtering method,then sintered the Ti thin films in air atmosphere and finally TiO2 transparence thinfilms on glass substrates were obtained. The structure and surface morphologies ofthe thin films were characterized by X-ray diffraction and SEM. The growth processof the thin filns has been observed. The annealing time and annealing temperatureshave an affect on the growth of the films.

  20. Vehicle Exhaust Gas Clearance by Low Temperature Plasma-Driven Nano-Titanium Dioxide Film Prepared by Radiofrequency Magnetron Sputtering

    OpenAIRE

    Shuang Yu; Yongdong Liang; Shujun Sun; Kai Zhang; Jue Zhang; Jing Fang

    2013-01-01

    A novel plasma-driven catalysis (PDC) reactor with special structure was proposed to remove vehicle exhaust gas. The PDC reactor which consisted of three quartz tubes and two copper electrodes was a coaxial dielectric barrier discharge (DBD) reactor. The inner and outer electrodes firmly surrounded the outer surface of the corresponding dielectric barrier layer in a spiral way, respectively. Nano-titanium dioxide (TiO2) film prepared by radiofrequency (RF) magnetron sputtering was coated on t...

  1. Optical and Chemical Properties of Mixed-valent Rhenium Oxide Films Synthesized by Reactive DC Magnetron Sputtering

    Science.gov (United States)

    2015-04-03

    AFRL-RX-WP-JA-2015-0178 OPTICAL AND CHEMICAL PROPERTIES OF MIXED- VALENT RHENIUM OXIDE FILMS SYNTHESIZED BY REACTIVE DC MAGNETRON...To) 06 May 2010 – 16 March 2015 4. TITLE AND SUBTITLE OPTICAL AND CHEMICAL PROPERTIES OF MIXED-VALENT RHENIUM OXIDE FILMS SYNTHESIZED BY REACTIVE ...DC MAGNETRON SPUTTERING (POSTPRINT) 5a. CONTRACT NUMBER In-house 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 62102F 6. AUTHOR(S) (see

  2. The structural properties of CdS deposited by chemical bath deposition and pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bass, K.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom)

    2015-05-01

    Cadmium sulphide (CdS) thin films were deposited by two different processes, chemical bath deposition (CBD), and pulsed DC magnetron sputtering (PDCMS) on fluorine doped-tin oxide coated glass to assess the potential advantages of the pulsed DC magnetron sputtering process. The structural, optical and morphological properties of films obtained by CBD and PDCMS were investigated using X-ray photoelectron spectroscopy, X-ray diffraction, scanning and transmission electron microscopy, spectroscopic ellipsometry and UV-Vis spectrophotometry. The as-grown films were studied and comparisons were drawn between their morphology, uniformity, crystallinity, and the deposition rate of the process. The highest crystallinity is observed for sputtered CdS thin films. The absorption in the visible wavelength increased for PDCMS CdS thin films, due to the higher density of the films. The band gap measured for the as-grown CBD-CdS is 2.38 eV compared to 2.34 eV for PDCMS-CdS, confirming the higher density of the sputtered thin film. The higher deposition rate for PDCMS is a significant advantage of this technique which has potential use for high rate and low cost manufacturing. - Highlights: • Pulsed DC magnetron sputtering (PDCMS) of CdS films • Chemical bath deposition of CdS films • Comparison between CdS thin films deposited by chemical bath and PDCMS techniques • High deposition rate deposition for PDCMS deposition • Uniform, pinhole free CdS thin films.

  3. Influence of heat treatment on the structural, morphological and optical properties of DC magnetron sputtered Ti$_{x}$Si$_{1−x}$O$_2$ films

    Indian Academy of Sciences (India)

    SURESH ADDEPALLI; UTHANNA SUDA

    2016-06-01

    Ti$_x$Si$_{1−x}$O$_2$ thin films were formed onto unheated p-silicon and quartz substrates by sputtering composite target of Ti80Si20 using reactive DC magnetron sputtering method. The as-deposited films were annealed in oxygenatmosphere at different temperatures in the range 400–900$^{\\circ}$C. X-ray photoelectron spectroscopic indicated that the as-deposited films formed at oxygen flow rate of 8 sccm were of Ti$_{0.7}$Si$_{0.3}$O$_2$. X-ray diffraction studies revealed that the as-deposited films were amorphous. The films annealed at 800$^{\\circ}$C were exhibited broad (101) peak which indicated the growth of nanocrystalline with anatase phase of TiO$_2$. The crystallite size of the films increased from 9 to 12 nm with increase of annealing temperature from 800 to 900$^{\\circ}$C, respectively, due to increase in crystallinity and decrease in defect density. XPS spectra of annealed films showed the characteristic core level binding energies of the constituent Ti$_{0.7}$Si$_{0.3}$O$_2$. Optical band gap decreased from 4.08 to 3.95 eV and the refractive index decreased from 2.11 to 2.08 in the as-deposited and the films annealed at 900$^{\\circ}$C due to decrease in the lattice strain and dislocation density.

  4. The effects of substrate and annealing on structural and electrochemical properties in LiCoO2 thin films prepared by DC magnetron sputtering.

    Science.gov (United States)

    Noh, Jung Pil; Jung, Ki Taek; Cho, Gyu Bong; Lee, Sang Hun; Kim, Ki Won; Nam, Tae Hyun

    2012-07-01

    LiCoO2 thin films were fabricated by direct current magnetron sputtering method on STS304 and Ti substrates. The effects of substrate and annealing on their structural and electrochemical properties of LiCoO2 thin film cathode were studied. Crystal structures and surface morphologies of the deposited films were investigated by X-ray diffraction and field emission scanning electron microscopy. The as-deposited films on both substrates have amorphous structure. The (104) oriented perfect crystallization was obtained by annealing over 600 degrees C in STS304 substrate. The LiCoO2 thin film deposited on Ti substrate shows the (003) texture after annealing at 700 degrees C. The electrochemical properties were investigated by the cyclic voltammetry and charge-discharge measurement. The 600 degrees C-annealed LiCoO2 film deposited on STS304 substrate exhibits the inithial discharge capacity of 22 uAh/cm2 and the 96% capacity retention rate at 50th cycles. The electrochemical measurement on annealed films over 600 degrees C was impossible due to the formed TiO2 insulator layer using Ti substrate. As a result, it was found that the STS304 substrate seems to be more suitable material than the Ti substrate in fabricating LiCoO2 thin film cathode.

  5. Fabrication, ultra-structure characterization and in vitro studies of RF magnetron sputter deposited nano-hydroxyapatite thin films for biomedical applications

    Energy Technology Data Exchange (ETDEWEB)

    Surmeneva, Maria A. [Department of Theoretical and Experimental Physics, National Research Tomsk Polytechnic University, Tomsk 634050 (Russian Federation); Surmenev, Roman A., E-mail: rsurmenev@gmail.com [Department of Theoretical and Experimental Physics, National Research Tomsk Polytechnic University, Tomsk 634050 (Russian Federation); Fraunhofer Institute for Interfacial Engineering and Biotechnology IGB, 70569 Stuttgart (Germany); Nikonova, Yulia A.; Selezneva, Irina I. [Institute of Theoretical and Experimental Biophysics, Russian Academy of Sciences, Pushchino 142292 (Russian Federation); Ivanova, Anna A. [Department of Theoretical and Experimental Physics, National Research Tomsk Polytechnic University, Tomsk 634050 (Russian Federation); Putlyaev, Valery I. [Department of Chemistry, Moscow State University, Vorobievi Gory, 1, Moscow 119991 (Russian Federation); Prymak, Oleg; Epple, Matthias [Inorganic Chemistry and Center for Nanointegration Duisburg-Essen (CeNIDE), University of Duisburg-Essen, 45117 Essen (Germany)

    2014-10-30

    Highlights: • Growth of a columnar grain structure perpendicular to the substrate surface was observed. • Interplanar spacing distances measured using HRTEM were 0.82 and 0.28 nm, corresponding to the (0 0 1) and (2 1 1) lattice planes of hexagonal HA. • Grain size and crystallinity increased when increasing the deposition time. • Nanometer-thick low-crystallinity HA coatings with different thicknesses stimulated cells to attach, proliferate and form mineralized nodules. - Abstract: A series of nanostructured low-crystalline hydroxyapatite (HA) coatings averaging 170, 250, and 440 nm in thickness were deposited onto previously etched titanium substrates through radio-frequency (RF) magnetron sputtering. The HA coatings were analyzed using infrared spectroscopy (FTIR), X-ray diffraction (XRD), and scanning and transmission electron microscopy (SEM and TEM). Cross sections of the thin specimens were prepared by FIB to study the microstructure of the coatings by TEM. The deposition process formed nano-scale grains, generating an amorphous layer at the substrate/coating interface and inducing the growth of a columnar grain structure perpendicular to the substrate surface. A microstructural analysis of the film confirmed that the grain size and crystallinity increased when increasing the deposition time. The nanostructured HA coatings were not cytotoxic, as proven by in vitro assays using primary dental pulp stem cells and mouse fibroblast NCTC clone L929 cells. Low-crystallinity HA coatings with different thicknesses stimulated cells to attach, proliferate and form mineralized nodules on the surface better than uncoated titanium substrates.

  6. Understanding of gas phase deposition of reactive magnetron sputtered TiO2 thin films and its correlation with bactericidal efficiency

    Science.gov (United States)

    Panda, A. B.; Mahapatra, S. K.; Barhai, P. K.; Das, A. K.; Banerjee, I.

    2012-10-01

    Nanostructured TiO2 thin films were deposited using RF reactive magnetron sputtering at different O2 flow rates (20, 30, 50 and 60 sccm) and constant RF power of 200 W. In situ investigation of the nucleation and growth of the films was made by Optical Emission Spectroscopy (OES). The nano amorphous nature as revealed from X-ray diffraction (XRD) of the as deposited films and abundance of the Ti3+ surface oxidation states and surface hydroxyl group (OH-) in the films deposited at 50 sccm as determined from X-ray photo electron spectroscopy (XPS) was explained on the basis of emission spectra studies. The increase in band gap and decrease in particle size with O2 flow rate was observed from transmission spectra of UV-vis spectroscopy. Photoinduced hydrophilicity has been studied using Optical Contact Angle (OCA) measurement. The post irradiated films showed improved hydrophilicity. The bactericidal efficiency of these films was investigated taking Escherichia coli as model bacteria. The films deposited at 50 sccm shows better bactericidal activity as revealed from the optical density (OD) measurement. The qualitative analysis of the bactericidal efficiency was depicted from Scanning Electron Microscope images. A correlation between bactericidal efficiency and the deposited film has been established and explained on the basis of nucleation growth, band gap and hydrophilicity of the films.

  7. Effect of Si addition on the structure and corrosion behavior of NbN thin films deposited by unbalanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Velasco, L. [Universidad Nacional de Colombia, Departamento de Ingenieria Mecanica y Mecatronica, Facultad de Ingenieria, Bogota (Colombia); University of Southern California, Department of Chemical Engineering and Materials Science, Los Angeles, CA (United States); Olaya, J.J. [Universidad Nacional de Colombia, Departamento de Ingenieria Mecanica y Mecatronica, Facultad de Ingenieria, Bogota (Colombia); Rodil, S.E. [Universidad Nacional Autonoma de Mexico, Instituto de Investigaciones en Materiales, Mexico, D. F. (Mexico)

    2016-02-15

    In this work, nanostructured Nb{sub x}Si{sub y}N{sub z} thin films were deposited onto stainless steel AISI 304 substrates by co-sputtering a Nb target with Si additions while using unbalanced magnetron sputtering. The microstructure was analyzed by X-ray diffraction, and the chemical composition was identified by X-ray photoelectron spectroscopy. The hardness was measured by nanoindentation, and the corrosion resistance was studied by potentiodynamic polarization curves and electrochemical impedance spectroscopy using a 3 wt% NaCl solution. The addition of Si in the NbN thin films changed the microstructure from a crystalline to an amorphous phase. The chemical analysis showed the presence of both Si{sub 3}N{sub 4} and NbN phases. The hardness decreased from 20 GPa (NbN) to 15 GPa for the film with the highest Si concentration (28.6 at.%). Nevertheless, the corrosion properties were significantly improved as the Si concentration increased; the polarization resistance after 168 h of immersion was two orders of magnitude larger in comparison with the substrate. (orig.)

  8. Fabrication of calcium phosphate films for coating on titanium substrates heated up to 773 K by RF magnetron sputtering and their evaluations

    Energy Technology Data Exchange (ETDEWEB)

    Ueda, Kyosuke [Department of Materials Processing, Tohoku University, 6-6-02 Aza Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan); Narushima, Takayuki [Tohoku University Biomedical Engineering Research Organization, 6-6-02 Aza Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan); Goto, Takashi [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Taira, Masayuki [Department of Dental Materials and Technology, Iwate Medical University School of Dentistry, 1-3-27 Chuo-dori, Morioka, Iwate 020-8505 (Japan); Katsube, Tomoyuki [Tohoku University Biomedical Engineering Research Organization, 6-6-02 Aza Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan)

    2007-09-15

    Calcium phosphate films were fabricated on titanium substrates heated up to 773 K using radiofrequency (RF) magnetron sputtering. The deposition rate, phase and preferred orientation of the calcium phosphate films were studied. Immersion tests for the films were conducted using Hanks' solution and PBS(-), and the surface reactions on the specimens coated with the calcium phosphate films were investigated. The bonding strength between the coating films and the titanium substrates before and after the immersion tests was evaluated; the bonding strength decreased after the immersion tests. The alkaline phosphatase (ALP) activity of SaOS-2 cells on a titanium plate coated with a calcium phosphate film was examined by conducting a culture test. Calcium phosphate coating increased the ALP activity of SaOS-2 cells cultured for 3 and 7 days. Titanium cylinders were coated with an amorphous calcium phosphate film and implanted into the mandibles of beagle dogs. An increase in the extent of bone-implant contact for the coated titanium cylinders was confirmed 8 to 12 weeks after implantation and compared with the case for uncoated titanium cylinders.

  9. Bi{sub 4}V{sub 2}O{sub 11} and BITAVOX.20 coatings deposited by reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Dereeper, E., E-mail: eloi.dereeper@utbm.fr [IRTES-LERMPS, UTBM, Site de Montbéliard, F90010 Belfort Cedex (France); Briois, P. [IRTES-LERMPS, UTBM, Site de Montbéliard, F90010 Belfort Cedex (France); Vannier, R.-N. [Unité de Catalyse et de Chimie du Solide, UMR CNRS 8181, Université Lille 1, ENSCL, BP 90108, 59652 Villeneuve d' Ascq Cedex (France); Billard, A. [IRTES-LERMPS, UTBM, Site de Montbéliard, F90010 Belfort Cedex (France)

    2015-03-01

    Bi{sub 4}V{sub 2}O{sub 11} and BITAVOX.20 films were deposited by magnetron sputtering in reactive conditions from Bi, V and Ta metallic targets. The influence of sputtering conditions on the films composition was studied and then a structural study at variable temperature was carried out. Before annealing, the films were amorphous and the γ-Bi{sub 4}V{sub 2}O{sub 11} structure was obtained for a treatment at temperatures over 550 °C whereas BITAVOX.20 started to crystallise at 425 °C. In both cases, crystallisation occurred via an intermediate fluorite phase presenting a tetragonal deformation as already observed for other compounds with the Aurivillius structure. - Highlights: • Bi{sub 4}V{sub 2}O{sub 11} and BITAVOX.20 were synthesized by reactive magnetron co-sputtering. • Crystallization of the coatings was studied by X-ray diffraction in temperature. • High temperature γ form grows from a new type of intermediate phase. • The conductivity of Bi{sub 4}V{sub 2}O{sub 11} coatings was investigated by impedance spectroscopy measurements along the sample surface.

  10. Determination of the sputter rate variation pattern of a silicon carbide target for radio frequency magnetron sputtering using optical transmission measurements

    Energy Technology Data Exchange (ETDEWEB)

    Galvez de la Puente, G. [Departamento de Ciencias, Seccion Fisica, Pontificia Universidad Catolica del Peru, Av. Universitaria 1801, Apartado Postal 1761, Lima 32 (Peru); Department of Materials Science 6, University of Erlangen, Martensstrasse 7, 91058-Erlangen (Germany); Guerra Torres, J.A. [Departamento de Ciencias, Seccion Fisica, Pontificia Universidad Catolica del Peru, Av. Universitaria 1801, Apartado Postal 1761, Lima 32 (Peru); Erlenbach, O. [Departamento de Ciencias, Seccion Fisica, Pontificia Universidad Catolica del Peru, Av. Universitaria 1801, Apartado Postal 1761, Lima 32 (Peru); Department of Materials Science 6, University of Erlangen, Martensstrasse 7, 91058-Erlangen (Germany); Steidl, M. [Department of Materials Science 6, University of Erlangen, Martensstrasse 7, 91058-Erlangen (Germany); Weingaertner, R., E-mail: rolandw@fisica.pucp.edu.pe [Departamento de Ciencias, Seccion Fisica, Pontificia Universidad Catolica del Peru, Av. Universitaria 1801, Apartado Postal 1761, Lima 32 (Peru); Department of Materials Science 6, University of Erlangen, Martensstrasse 7, 91058-Erlangen (Germany); De Zela, F. [Departamento de Ciencias, Seccion Fisica, Pontificia Universidad Catolica del Peru, Av. Universitaria 1801, Apartado Postal 1761, Lima 32 (Peru); Winnacker, A. [Department of Materials Science 6, University of Erlangen, Martensstrasse 7, 91058-Erlangen (Germany)

    2010-10-25

    We produce amorphous silicon carbide thin films (a-SiC) by radio frequency (rf) magnetron sputtering from SiC bulk target. We present the emission pattern of the rf magnetron with SiC target as a function of process parameters, like target sample distance, rf power, sputtering rate and process gas pressure. The emission pattern is determined by means of thickness distribution of the deposited a-SiC films obtained from optical transmission measurements using a slightly improved method of Swanepoel concerning the determination of construction of the envelopes in the interference pattern of the transmission spectra. A calibration curve is presented which allows the conversion of integrated transmission to film thickness. Holding constant a set of process parameters and only varying the target sample distance the emission pattern of the rf magnetron with SiC target was determined, which allowed us to predict the deposition rate distribution for a wide range of process parameters and target geometry. In addition, we have found that the transmission spectra of the a-SiC films change with time and saturate after approximately 10 days. Within this process no change in thickness is involved, so that the determination of thickness using transmission data is justified.

  11. Tribological and structural properties of titanium nitride and titanium aluminum nitride coatings deposited with modulated pulsed power magnetron sputtering

    Science.gov (United States)

    Ward, Logan

    The demand for economical high-performance materials has brought attention to the development of advanced coatings. Recent advances in high power magnetron sputtering (HPPMS) have shown to improve tribological properties of coatings. These coatings offer increased wear and oxidation resistance, which may facilitate the use of more economical materials in harsh applications. This study demonstrates the use of novel forms of HPPMS, namely modulated pulsed-power magnetron sputtering (MPPMS) and deep oscillation magnetron sputtering (DOMS), for depositing TiN and Ti1-xAlxN tribological coatings on commonly used alloys, such as Ti-6Al-4V and Inconel 718. Both technologies have been shown to offer unique plasma characteristics in the physical vapor deposition (PVD) process. High power pulses lead to a high degree of ionization compared to traditional direct-current magnetron sputtering (DCMS) and pulsed magnetron sputtering (PMS). Such a high degree of ionization was previously only achievable by cathodic arc deposition (CAD); however, CAD can lead to increased macroparticles that are unfavorable in high friction and corrosive environments. MPPMS, DOMS, and other HPPMS techniques offer unique plasma characteristics and have been shown to produce coatings with refined grain structure, improved density, hardness, adhesion, and wear resistance. Using DOMS and MPPMS, TiN and Ti1-xAlxN coatings were deposited using PMS to compare microstructures and tribological performance. For Ti1-xAlxN, two sputtering target compositions, Ti 0.5Al0.5 and Ti0.3Al0.7, were used to evaluate the effects of MPPMS on the coating's composition and tribological properties. Scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray diffraction (XRD) were used to characterize microstructure and crystallographic texture. Several tribological properties were evaluated including: wear rate, coefficient of friction, adhesion, and nanohardness. Results show that substrate

  12. Studies on Nanostructure Aluminium Thin Film Coatings Deposited using DC magnetron Sputtering Process

    Science.gov (United States)

    Singh M, Muralidhar; G, Vijaya; MS, Krupashankara; Sridhara, B. K.; Shridhar, T. N.

    2016-09-01

    Nanostructured thin film metallic coatings has become an area of intense research particularly in applications related solar, sensor technologies and many other optical applications such as laser windows, mirrors and reflectors. Thin film metallic coatings were deposited using DC magnetron sputtering process. The deposition rate was varied to study its influence on optical behavior of Aluminum thin films at a different argon flow rate. Studies on the optical response of these nanostructure thin film coatings were characterized using UV-VIS-NIR spectrophotometer with integrating sphere in the wavelength range of (250-2500nm) and Surface morphology were carried out using atomic force microscope with roughness ranging from 2 to 20nm and thickness was measured using Dektak measuring instrument. The reflection behavior of aluminium coatings on polycarbonate substrates has been evaluated. UV-VIS-NIR Spectrophotometer analysis indicates higher reflectance of 96% for all the films in the wavelength range of 250 nm to 2500 nm. Nano indentation study revealed that there was a considerable change in hardness values of the films prepared at different conditions.

  13. Nanostructured multilayers of TiN/ZrN obtained by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Caicedo A., J.C. [CDT ASTIN, SENA Regional Valle, Cali (Colombia); Grupo de Peliculas Delgadas, Universidad del Valle (Colombia); Centro de Excelencia en Nuevos Materiales, CENM, Universidad del Valle (Colombia); Bejarano G., G. [CDT ASTIN, SENA Regional Valle, Cali (Colombia); Group of Corrosion and Protection, Antioquia University, Medellin (Colombia); Gomez, M.E. [Grupo de Peliculas Delgadas, Universidad del Valle (Colombia); Centro de Excelencia en Nuevos Materiales, CENM, Universidad del Valle (Colombia); Prieto, P. [Centro de Excelencia en Nuevos Materiales, CENM, Universidad del Valle (Colombia); Cortez, C.; Munoz, J. [Centro de Investigacion y Estudios Avanzados del CINVESTAV-IPN, Queretaro (Mexico)

    2007-07-01

    In order to find an industrial application for thin films of TiN and ZrN monolayers, as well as TiN/ZrN multilayers were deposited onto silicon (100) and AISI 5160 steel substrates by r.f. (13.56 MHz) multi-target magnetron sputtering from high-purity (99.5%) Ti and (99.5%) Zr targets in an Ar (93%)/N{sub 2} (7%) gas mixture. For their deposition, we applied a substrate bias voltage of -100 V and a target power of 350 W. The films were deposited at a pressure of 6x10{sup -3} mbar and a temperature of 250 C. The structure, composition, morphology, and topography were characterized by, XRD, FTIR, SEM, AFM, and optical microscopy. Mechanical properties like hardness and elastic modulus were determined by Nanoindentation. Hardness and elastic modulus of the films increased proportionally to the number of bilayers. Finally, cutting tools were coated with 1, 2, 3, 4, 5, 6, 7, and 8 bilayers of TiN/ZrN. Cutting tests on paper blades were conducted. Increased cut quality performance was observed for cutting tools coated with 8 bilayers, as compared to uncoated tools. This work opens the possibility to use coated AISI 5160 as cutting tools for the paper industry, reducing the import of expensive high-quality tool steel. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Low friction coefficient coatings Ni-Cr by magnetron sputtering, DC

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Hernandez, J.; Mandujano-Ruiz, A.; Torres-Gonzalez, J.; Espinosa-Beltran, F. J.; Herrera-Hernandez, H.

    2015-07-01

    Magnetron Sputter Deposition technique with DC was used for the deposition of Ni-Cr coatings on AISI 316 SS like substrate. The cathode with a nominal composition Ni-22 at% Cr was prepared by Mechanical Alloying (MA) technique, with a maximum milling time of 16 hours and, with a high energy SPEX 8000 mill. The coatings were made under Argon atmosphere at room temperature with a power of 100 W at different times of growth. Chemical composition, microstructure, topography, nano hardness and wear of the coatings were evaluated using the techniques of microanalysis by energy dispersive X-ray analyzer (EDAX), X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), Nano-indentation and pin-on-Disk, respectively. After milling, was not detected contamination in the mixtures. XRD analysis revealed that the microstructure of the Ni-Cr alloy was maintained in the coatings with respect to MA powders, with some degree of recrystallization. Nano hardness values were in the order of 8.8 GPa with a Youngs modulus of 195 GPa. The adhesion of the films was evaluated according to their resistance to fracture when these were indented at different loads using Vickers microhardness. The wear test results showed a decrease in the friction coefficient with respect to the increase of thickness films, getting a minimum value of 0.08 with a thickness of 1 μm and which correspond with the maximum growing time. (Author)

  15. Biocompatibility of GaSb thin films grown by RF magnetron sputtering

    Science.gov (United States)

    Nishimoto, Naoki; Fujihara, Junko; Yoshino, Katsumi

    2017-07-01

    GaSb may be suitable for biological applications, such as cellular sensors and bio-medical instrumentation because of its low toxicity compared with As (III) compounds and its band gap energy. Therefore, the biocompatibility and the film properties under physiological conditions were investigated for GaSb thin films with or without a surface coating. GaSb thin films were grown on quartz substrates by RF magnetron sputtering, and then coated with (3-mercaptopropyl) trimethoxysilane (MPT). The electrical properties, surface morphology, and crystal structure of the GaSb thin film were unaffected by the MPT coating. The cell viability assay suggested that MPT-coated GaSb thin films are biocompatible. Bare GaSb was particularly unstable in pH9 buffer. Ga elution was prevented by the MPT coating, although the Ga concentration in the pH 9 buffer was higher than that in the other solutions. The surface morphology and crystal structure were not changed by exposure to the solutions, except for the pH 9 buffer, and the thin film properties of MPT-coated GaSb exposed to distilled water and H2O2 in saline were maintained. These results indicate that MPT-coated GaSb thin films are biocompatible and could be used for temporary biomedical devices.

  16. Microstructure and magnetic properties of FePt/MgO multilayers deposited by RF magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    Xiaoli Li; Fang Wang; Fengxian Jiang; Xiaohong Xu; Haishun Wu

    2008-01-01

    FePt (50 rim) and [FePt(a nm)/MgO(b nm)]5/glass (a=1, 2, 3; b=1, 2, 3)films Were prepared by radio frequency (RF) magnetron sputtering technique, and then were annealed at 600℃ for 30 min. The effect of MgO layer thickness on the structures and magnetic properties of the FePt/MgO multilayers was investigated. The coercivities and inter-grain interactions of the FePt/MgO films were decreased, yet the degree of (001) texturing drastically increased with the increase in MgO layer thickness when the FePt layer thickness was fixed. Thus, the FePt/MgO films with appropriate coercivities, high perpendicular anisotropy, and weak inter- grain interactions were obtained by controlling the MgO layer thickness. Overall, these results indicate that the FePt/MgO nanos- tructured films are promising candidates for future high-density perpendicular recording media. C 2008 University of Science and Technology Beijing. All fights reserved.

  17. Adhesion analysis for chromium nitride thin films deposited by reactive magnetron sputtering

    Science.gov (United States)

    Rusu, F. M.; Merie, V. V.; Pintea, I. M.; Molea, A.

    2016-08-01

    The thin film industry is continuously growing due to the wide range of applications that require the fabrication of advanced components such as sensors, biological implants, micro-electromechanical devices, optical coatings and so on. The selection regarding the deposition materials, as well as the deposition technology influences the properties of the material and determines the suitability of devices for certain real-world applications. This paper is focused on the adhesion force for several chromium nitride thin films obtained by reactive magnetron sputtering. All chromium nitride thin films were deposited on a silicon substrate, the discharge current and the argon flow being kept constant. The main purpose of the paper is to determine the influence of deposition parameters on the adhesion force. Therefore some of the deposition parameters were varied in order to study their effect on the adhesion force. Experimentally, the values of the adhesion force were determined in multiple points for each sample using the spectroscopy in point mode of the atomic force microscope. The obtained values were used to estimate the surface energy of the CrN thin films based on two existing mathematical models for the adhesion force when considering the contact between two bodies.

  18. Wear and corrosion behavior of W/WC bilayers deposited by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez, N.A. de [Excellence Center for Novel Materials, Universidad del Valle, Cali (Colombia); Jaramillo, H.E. [Science and Engineering of Materials Group, Department of Basic Science of Engineering, Universidad Autonoma de Occidente, Cali (Colombia); Department of Energetic and Mechanic, Universidad Autonoma de Occidente, Cali (Colombia); Bejarano, G. [Excellence Center for Novel Materials, Universidad del Valle, Cali (Colombia); Group for Engineering and Materials Development, CDT ASTIN-SENA, Cali (Colombia); Group of Corrosion and Protection, Antioquia University, Medellin (Colombia); Villamil, B.E.; Teran, G. [Richer Young, COLCIENCIAS, Cali (Colombia)

    2007-07-01

    WC/W coatings were deposited by reactive magnetron sputtering using 40%, 60% and 80% methane CH{sub 4} in the gas mixture. The bilayers were grown on to AISI 420 stainless-steel substrates in order to study the wear and corrosion behavior. Before growing the bilayers, one Ti monolayer was grown to improve the adherence of the coatings to the substrate. The wear resistance and the friction coefficient of the coatings were determined using a pin-on-disk tribometer. All coatings had a friction coefficient of about 0.5. The measured weight lost of the bilayers from each probe allowed the qualitative analysis of wear behavior all coatings. The bilayers grown with 80% methane showed the best abrasive wear resistance and adhesion without failure through the coating in the wear track for dry pin-on-disk sliding. Electrochemical corrosion test showed that the bilayers grown with 80% methane were more resistant to corrosion than the ones uncoated. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Active soft solder deposition by magnetron-sputter-ion-plating (MSIP)-PVD-process

    Energy Technology Data Exchange (ETDEWEB)

    Lugscheider, E.; Bobzin, K.; Erdle, A

    2004-01-30

    In different technical areas micro electro mechanical systems (M.E.M.S.), e.g. micro pumps, micro sensors, actuators and micro dosage systems are in use today. The components of these M.E.M.S. consist of various materials, which have to be joined. To join materials like ceramics, plastics or metals to a hybrid M.E.M.S., established joining technologies have to be adjusted. For the assembling and mounting of temperature sensible micro components, a low temperature joining process, e.g. transient liquid phase (TLP) bonding or an active soft soldering process can be performed. In this article the deposition of a low melting active soft solder by magnetron-sputter (MS)-PVD deposition with an active substrate cooling will be presented. The substrate temperatures were set and controlled by an additional cooling unit, which was integrated into the sputtering facility. In the performed experiments a substrate temperature range from -40 to +20 deg. C was investigated. The effects of these different substrate temperatures to the microstructure and the soldering suitability of the solder system were investigated by scanning electron microscopy (SEM), nanoindentation and soldering tests. The chemical composition of the deposited solder systems was examined by glow discharge optical spectroscopy (GDOS)-analysis. As a suitable substrate temperature range for deposition -10 to -20 deg. C was detected. Solder systems deposited in this temperature range showed good solder abilities.

  20. Electrical and optical properties of reactive DC magnetron sputtered silver oxide thin films: role of oxygen

    Energy Technology Data Exchange (ETDEWEB)

    Kumar Barik, Ullash; Srinivasan, S.; Nagendra, C.L.; Subrahmanyam, A

    2003-04-01

    Silver oxide thin films have been prepared on soda lime glass substrates at room temperature (300 K) by reactive DC Magnetron sputtering technique using pure silver metal target; the oxygen flow rates have been varied in the range 0.00-2.01 sccm. The X-ray diffraction data on these films show a systematic change from metallic silver to silver (sub) oxides. The electrical resistivity increases with increasing oxygen flow. The films show a p-type behavior (by both Hall and Seebeck measurements) for the oxygen flow rates of 0.54, 1.09 and 1.43 sccm. The refractive index of the films (at 632.8 nm) decreases with increasing oxygen content and is in the range 1.167-1.145, whereas the p-type films show a higher refractive index (1.186-1.204). The work function of these silver oxide films has been measured by Kelvin Probe technique. The results, in specific, the p-type conductivity in the silver oxide films, have been explained on the basis of the theory of partial ionic charge proposed by Sanderson.

  1. Antimicrobial brass coatings prepared on poly(ethylene terephthalate) textile by high power impulse magnetron sputtering.

    Science.gov (United States)

    Chen, Ying-Hung; Wu, Guo-Wei; He, Ju-Liang

    2015-03-01

    The goal of this work is to prepare antimicrobial, corrosion-resistant and low-cost Cu65Zn35 brass film on poly(ethylene terephthalate) (PET) fabric by high-power impulse magnetron sputtering (HIPIMS), which is known to provide high-density plasma, so as to generate a strongly adherent film at a reduced substrate temperature. The results reveal that the brass film grows in a layer-plus-island mode. Independent of their deposition time, the obtained films retain a Cu/Zn elemental composition ratio of 1.86 and exhibit primarily an α copper phase structure. Oxygen plasma pre-treatment for 1min before coating can significantly increase film adhesion such that the brass-coated fabric of Grade 5 or Grade 4-5 can ultimately be obtained under dry and wet rubbing tests, respectively. However, a deposition time of 1min suffices to provide effective antimicrobial properties for both Staphylococcus aureus and Escherichia coli. As a whole, the feasibility of using such advanced HIPIMS coating technique to develop durable antimicrobial textile was demonstrated.

  2. Enhanced deposition of ZnO films by Li doping using radio frequency reactive magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    Liang-xian Chen; Sheng Liu; Cheng-ming Li; Yi-chao Wang; Jin-long Liu; Jun-jun Wei

    2015-01-01

    Radio frequency (RF) reactive magnetron sputtering was utilized to deposit Li-doped and undoped zinc oxide (ZnO) films on sili-con wafers. Various Ar/O2 gas ratios by volume and sputtering powers were selected for each deposition process. The results demonstrate that the enhanced ZnO films are obtained via Li doping. The average deposition rate for doped ZnO films is twice more than that of the un-doped films. Both atomic force microscopy and scanning electron microscopy studies indicate that Li doping significantly contributes to the higher degree of crystallinity of wurtzite–ZnO. X-ray diffraction analysis demonstrates that Li doping promotes the (002) preferential orien-tation in Li-doped ZnO films. However, an increase in the ZnO lattice constant, broadening of the (002) peak and a decrease in the peak inte-gral area are observed in some Li-doped samples, especially as the form of Li2O. This implies that doping with Li expands the crystal struc-ture and thus induces the additional strain in the crystal lattice. The oriented-growth Li-doped ZnO will make significant applications in fu-ture surface acoustic wave devices.

  3. Uniformity in large area ZnO:Al films prepared by reactive midfrequency magnetron sputtering

    CERN Document Server

    Hong, R J; Sittinger, V; Szyszka, B; Hoeing, T; Bräuer, G; Heide, G; Frischat, G H

    2002-01-01

    Al-doped zinc oxide (ZnO:Al) films were deposited on glass substrates using a reactive midfrequency magnetron sputtering process. The optical transmission and reflection as well as the electrical resistivity of the films prepared on an area of 1000x600 mm sup 2 were determined at different locations. Films with a uniform distribution of resistivity between 2.9x10 sup - sup 4 and 3.6x10 sup - sup 4 OMEGA cm and transmittance up to 88% in the visible spectral range were obtained. The ellipsometric spectra of the films were also analyzed using the Drude-Lorentz model. The calculated thicknesses of the films agreed well with those measured by a step profilometer. Secondary neutral mass spectrometry depth profiling showed uniform contents of Zn and O elements, while a slight periodic variation of the Al content was observed at different depths inside the film. A transition zone of 35-55 nm in width between the films and glass substrates due to the interdiffusion was also observed.

  4. Preparation and Characterization of NiO Thin Films by DC Reactive Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Y. Ashok Kumar Reddy

    2012-12-01

    Full Text Available Nickel oxide (NiO thin films were successfully deposited on Corning 7059 glass substrates at different oxygen partial pressures in the range of 1 × 10 – 4 to 9 × 10 – 4 mbar using dc reactive magnetron sputtering technique. Structural properties of NiO films showed polycrystalline nature with cubic structure along (220 orientation. The optical transmittance and band gap values of the films increased with increasing the oxygen partial pressure from 1 × 10 – 4 to 5 × 10 – 4 mbar and decreased on further increasing the oxygen partial pressure. Using Scanning Electron Microscopy (SEM, fine grains were observed at oxygen partial pressure of 5 × 10 – 4 mbar. The film resistivity decreases from 90.48 to 13.24 Ω cm with increase in oxygen partial pressure to 5 × 10 – 4 mbar and then increased on further increasing the oxygen partial pressure.

  5. High entropy alloy thin films deposited by magnetron sputtering of powder targets

    Energy Technology Data Exchange (ETDEWEB)

    Braeckman, B.R., E-mail: BertR.Braeckman@Ugent.be [Department of Solid State Sciences, Ghent University, Krijgslaan 281 (S1), 9000 Gent (Belgium); Boydens, F. [Department of Solid State Sciences, Ghent University, Krijgslaan 281 (S1), 9000 Gent (Belgium); Hidalgo, H.; Dutheil, P. [GREMI, UMR7344 CNRS, Université d' Orléans, BP6744, 45067 Orléans Cedex 2 (France); Jullien, M. [Institut Jean Lamour, Université de Lorraine, UMR CNRS, 7198 Vandoeuvre-lès-Nancy (France); Thomann, A.-L. [GREMI, UMR7344 CNRS, Université d' Orléans, BP6744, 45067 Orléans Cedex 2 (France); Depla, D. [Department of Solid State Sciences, Ghent University, Krijgslaan 281 (S1), 9000 Gent (Belgium)

    2015-04-01

    High entropy alloys (HEA) contain at least five principal elements in equimolar or near-equimolar ratios. These materials crystallize typically as a face-centered cubic (FCC), body-centered cubic (BCC) solid solution or as a mixture of these two crystal structures. AlCoCrCuFeNi thin films were deposited by magnetron sputtering of homemade pressed powder targets. Four targets with different compositions were sputtered under various conditions to modify the alloy composition. Scanning electron microscopy and energy-dispersive X-ray spectroscopy were used to study the surface morphology and composition whereas X-ray diffraction and X-ray reflectivity provided information regarding the phase formation and density of the films. It is suggested that, when taking into account the atomic radii of the constituent elements, the sputter deposited alloy thin films can be topologically regarded as binary alloys of the form Al-(CoCrCuFeNi). If the concentration of the largest atom (Al) increases, a transition from FCC to BCC is noticed. This structure transition could be attributed to a critical lattice distortion. - Highlights: • AlCoCrCuFeNi thin films were deposited by sputtering pressed power targets. • Sputter deposition of powder targets allows good control over the film composition. • With increasing Al fraction, a crystallographic structure transition was noticed. • The transition was made semi-quantitative with Egami's atomic-level stress theory.

  6. Microstructural characteristics and mechanical properties of magnetron sputtered nanocrystalline TiN films on glass substrate

    Indian Academy of Sciences (India)

    Vipin Chawla; R Jayaganthan; Ramesh Chandra

    2009-04-01

    Nanocrystalline TiN thin films were deposited on glass substrate by d.c. magnetron sputtering. The microstructural characteristics of the thin films were characterized by XRD, FE-SEM and AFM. XRD analysis of the thin films, with increasing thickness, showed the (200) preferred orientation up to 1.26 m thickness and then it transformed into (220) and (200) peaks with further increase in thickness up to 2.83 m. The variation in preferred orientation was due to the competition between surface energy and strain energy during film growth. The deposited films were found to be very dense nanocrystalline film with less porosity as evident from their FE-SEM and AFM images. The surface roughness of the TiN films has increased slightly with the film thickness as observed from its AFM images. The mechanical properties of TiN films such as hardness and modulus of elasticity () were investigated by nanoindentation technique. The hardness of TiN thin film was found to be thickness dependent. The highest hardness value (24 GPa) was observed for the TiN thin films with less positive micro strain.

  7. Properties of Erbium and Ytterbium Doped Gallium Nitride Layers Fabricated by Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    V. Prajzler

    2006-01-01

    Full Text Available We report about some properties of erbium and erbium/ytterbium doped gallium nitride (GaN layers fabricated by magnetron sputtering onsilicon, quartz and Corning glass substrates. For fabricating GaN layers two types of targets were used - gallium in a stainless steel cup anda Ga2O3 target. Deposition was carried out in the Ar+N2 gas mixture. For erbium and ytterbium doping into GaN layers, erbium metallicpowder and ytterbium powder or Er2O3 and Yb2O3 pellets were laid on the top of the target. The samples were characterized by X-raydiffraction (XRD, photoluminescence spectra and nuclear analytical methods. While the use of a metallic gallium target ensured thedeposition of well-developed polycrystalline layers, the use of gallium oxide target provided GaN films with poorly developed crystals. Bothapproaches enabled doping with erbium and ytterbium ions during deposition, and typical emission at 1 530 nm due to the Er3+ intra-4f 4I13/2 → 4I15/2 transition was observed.

  8. Antimicrobial brass coatings prepared on poly(ethylene terephthalate) textile by high power impulse magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Ying-Hung, E-mail: tieamo2002@gmail.com; Wu, Guo-Wei; He, Ju-Liang

    2015-03-01

    The goal of this work is to prepare antimicrobial, corrosion-resistant and low-cost Cu65Zn35 brass film on poly(ethylene terephthalate) (PET) fabric by high-power impulse magnetron sputtering (HIPIMS), which is known to provide high-density plasma, so as to generate a strongly adherent film at a reduced substrate temperature. The results reveal that the brass film grows in a layer-plus-island mode. Independent of their deposition time, the obtained films retain a Cu/Zn elemental composition ratio of 1.86 and exhibit primarily an α copper phase structure. Oxygen plasma pre-treatment for 1 min before coating can significantly increase film adhesion such that the brass-coated fabric of Grade 5 or Grade 4–5 can ultimately be obtained under dry and wet rubbing tests, respectively. However, a deposition time of 1 min suffices to provide effective antimicrobial properties for both Staphylococcus aureus and Escherichia coli. As a whole, the feasibility of using such advanced HIPIMS coating technique to develop durable antimicrobial textile was demonstrated. - Highlights: • Prepare antimicrobial, corrosion-resistant and low-cost Cu65Zn35 brass film on PET fabric by HIPIMS • Brass-coated fabric with excellent durability, even undergone rubbing and washing tests • Brass-coated fabric provides effective antimicrobial properties for E. coli and S. aureus. • After brass coating, PET fabric still retained its mechanical property.

  9. C-axis orientated AlN films deposited using deep oscillation magnetron sputtering

    Science.gov (United States)

    Lin, Jianliang; Chistyakov, Roman

    2017-02-01

    Highly c-axis orientated aluminum nitride (AlN) films were deposited on silicon (100) substrates by reactive deep oscillation magnetron sputtering (DOMS). No epitaxial favored bond layer and substrate heating were applied for assisting texture growth. The effects of the peak target current density (varied from 0.39 to 0.8 Acm-2) and film thickness (varied from 0.25 to 3.3 μm) on the c-axis orientation, microstructure, residual stress and mechanical properties of the AlN films were investigated by means of X-ray diffraction rocking curve methodology, transmission electron microscopy, optical profilometry, and nanoindentation. All AlN films exhibited a preferred orientation and compressive residual stresses. At similar film thicknesses, an increase in the peak target current density to 0.53 Acm-2 improved the orientation. Further increasing the peak target current density to above 0.53 Acm-2 showed limited contribution to the texture development. The study also showed that an increase in the thickness of the AlN films deposited by DOMS improved the c-axis alignment accompanied with a reduction in the residual stress.

  10. Duty cycle control in reactive high-power impulse magnetron sputtering of hafnium and niobium

    Science.gov (United States)

    Ganesan, R.; Treverrow, B.; Murdoch, B.; Xie, D.; Ross, A. E.; Partridge, J. G.; Falconer, I. S.; McCulloch, D. G.; McKenzie, D. R.; Bilek, M. M. M.

    2016-06-01

    Instabilities in reactive sputtering have technological consequences and have been attributed to the formation of a compound layer on the target surface (‘poisoning’). Here we demonstrate how the duty cycle of high power impulse magnetron sputtering (HiPIMS) can be used to control the surface conditions of Hf and Nb targets. Variations in the time resolved target current characteristics as a function of duty cycle were attributed to gas rarefaction and to the degree of poisoning of the target surface. As the operation transitions from Ar driven sputtering to metal driven sputtering, the secondary electron emission changes and reduces the target current. The target surface transitions smoothly from a poisoned state at low duty cycles to a quasi-metallic state at high duty cycles. Appropriate selection of duty cycle increases the deposition rate, eliminates the need for active regulation of oxygen flow and enables stable reactive deposition of stoichiometric metal oxide films. A model is presented for the reactive HIPIMS process in which the target operates in a partially poisoned mode with different degrees of oxide layer distribution on its surface that depends on the duty cycle. Finally, we show that by tuning the pulse characteristics, the refractive indices of the metal oxides can be controlled without increasing the absorption coefficients, a result important for the fabrication of optical multilayer stacks.

  11. Ge Nanoislands Grown by Radio Frequency Magnetron Sputtering: Comprehensive Investigation of Surface Morphology and Optical Properties

    Directory of Open Access Journals (Sweden)

    Alireza Samavati

    2015-01-01

    Full Text Available The comprehensive investigation of the effect of growth parameters on structural and optical properties of Si-based single layer Ge nanoislands grown via Stranski-Krastanov mechanism employing radio frequency magnetron sputtering due to its high deposition rate, easy procedure, economical cost, and safety is carried out. The estimated width and height of Ge nanoislands produced by this technique are in the range of ∼8 to ∼30 and ∼2 to 8 nm, respectively. Varieties parameters are manipulated to optimize the surface morphology and structural and optical behavior of Ge nanoislands. The resulted nanoislands are analyzed using various analytical techniques including atomic force microscope, X-ray diffraction, energy dispersive X-ray spectroscopy, room temperature photoluminescence, and Raman spectroscopy. The optimum parameters for growing high quality samples having high number density and homogenous and small size distribution are found to be 400°C for substrate temperature, 300 sec for deposition time, 10 sccm for Ar flow, and 100 W for radio frequency power. The excellent features of the results suggest that our systematic investigation on the organized growth factors and their effects on surface parameters and photoluminescence emission energy may constitute a basis for the tunable growth of Ge nanoislands (100 nanoislands suitable in nanophotonics.

  12. Surface treatment effect on Si (111) substrate for carbon deposition using DC unbalanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Aji, A. S., E-mail: aji.ravazes70@gmail.com; Sahdan, M. F.; Hendra, I. B.; Dinari, P.; Darma, Y. [Quantum Semiconductor and Devices Lab., Physics of Material Electronics Research Division, Department of Physics, Institut Teknologi Bandung (Indonesia)

    2015-04-16

    In this work, we studied the effect of HF treatment in silicon (111) substrate surface for depositing thin layer carbon. We performed the deposition of carbon by using DC Unbalanced Magnetron Sputtering with carbon pallet (5% Fe) as target. From SEM characterization results it can be concluded that the carbon layer on HF treated substrate is more uniform than on substrate without treated. Carbon deposition rate is higher as confirmed by AFM results if the silicon substrate is treated by HF solution. EDAX characterization results tell that silicon (111) substrate with HF treatment have more carbon fraction than substrate without treatment. These results confirmed that HF treatment on silicon Si (111) substrates could enhance the carbon deposition by using DC sputtering. Afterward, the carbon atomic arrangement on silicon (111) surface is studied by performing thermal annealing process to 900 °C. From Raman spectroscopy results, thin film carbon is not changing until 600 °C thermal budged. But, when temperature increase to 900 °C, thin film carbon is starting to diffuse to silicon (111) substrates.

  13. Ion beam analysis of TiN/Ti multilayers deposited by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Andrade, E. E-mail: andrade@fisica.unam.mx; Flores, M.; Muhl, S.; Barradas, N.P.; Murillo, G.; Zavala, E.P.; Rocha, M.F

    2004-06-01

    TiN/Ti multilayers, 1.74-9.80 {mu}m thick, were deposited on 304 stainless steel substrates by reactive unbalanced magnetron sputtering. It is known that such multilayers can improve the corrosion resistance of the stainless steel. The titanium layers help to reduce the occurrence of pinholes that arise because of the irregularities in substrate surface, and decrease the porosity of subsequent TiN coatings by improving the layers microstructure. A 1400 keV deuterium beam was used to analyse the samples and combinations of RBS/NRA methods were applied to evaluate the sample spectra. The {sup 14}N(d,{alpha}{sub 1}) {sup 12}C NR cross sections are well known and were used as way to determine the {sup 14}N concentration in the TiN{sub x} layers. The corrosion resistance of the layers was studied by means of potentiodynamic polarization in a 0.5 M NaCl solution. The corrosion test demonstrated that the number of TiN/Ti layers and its total thickness determine the corrosion resistance.

  14. Ti-Nb thin films deposited by magnetron sputtering on stainless steel

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez, E. David; Niemeyer, Terlize C.; Afonso, Conrado R. M.; Nascente, Pedro A. P., E-mail: nascente@ufscar.br [Department of Materials Engineering, Federal University of Sao Carlos, CEP 13565-905 Sao Carlos, São Paulo (Brazil)

    2016-03-15

    Thin films of Ti-Nb alloys were deposited on AISI 316L stainless steel substrate by magnetron sputtering, and the structure, composition, morphology, and microstructure of the films were analyzed by means of x-ray diffraction (XRD), (scanning) transmission electron microscopy (TEM) coupled with energy-dispersive x-ray spectroscopy, atomic force microscopy (AFM), and x-ray photoelectron spectroscopy (XPS). Thin films of four compositions were produced: Ti{sub 85}Nb{sub 15} (Ti-26 wt. % Nb), Ti{sub 80}Nb{sub 20} (Ti-33 wt. % Nb), Ti{sub 70}Nb{sub 30} (Ti-45 wt. % Nb), and Ti{sub 60}Nb{sub 40} (Ti-56 wt. % Nb). Structural characterization by XRD indicated that only the β phase was present in the thin films and that the increase in the Nb content modified the alloy film texture. These changes in the film texture, also detected by TEM analysis, were attributed to different growth modes related to the Nb content in the alloy films. The mean grain sizes measured by AFM increased with the Nb amount (from 197 to 222 nm). XPS analysis showed a predominance of oxidized Ti and Nb on the film surfaces and an enrichment of Ti.

  15. The behaviour of arcs in carbon mixed-mode high-power impulse magnetron sputtering

    Science.gov (United States)

    Tucker, M. D.; Putman, K. J.; Ganesan, R.; Lattemann, M.; Stueber, M.; Ulrich, S.; Bilek, M. M. M.; McKenzie, D. R.; Marks, N. A.

    2017-04-01

    Mixed-mode deposition of carbon is an extension of high-power impulse magnetron sputtering in which a short-lived arc is deliberately allowed to ignite on the target surface to increase the ionised fraction of carbon in the deposition flux. Here we investigate the ignition and evolution of these arcs and examine their behaviour for different conditions of argon pressure, power supply voltage, and current. We find that mixed-mode deposition is sensitive to the condition of the target surface, and changing the operating parameters causes changes in the target surface condition which themselves affect the discharge in a process of negative feedback. Initially the arcs are evenly distributed on the target racetrack, but after a long period of operation the mode of erosion changes and arcs become localised in a small region, resulting in a pronounced nodular structure. We also quantify macroparticle generation and observe a power-law size distribution typical of arc discharges. Fewer particles are generated for operation at lower Ar pressure when the arc spot velocity is higher.

  16. Nano-structured morphological features of pulsed direct current magnetron sputtered Mo films for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Karthikeyan, Sreejith, E-mail: s.karthikeyan@edu.salford.ac.uk; Hill, Arthur E.; Pilkington, Richard D.

    2011-10-31

    Historically, molybdenum thin films have been used as the back contact for Cu(In,Ga)Se{sub 2} based solar cells and as such the properties of these layers play an important role in the overall cell structure. This paper describes the production of molybdenum films using pulsed d.c. magnetron sputtering from compressed molybdenum powder targets. The films were deposited at different substrate temperatures under constant power and constant current modes, and analysed using X-ray diffraction, scanning electron microscopy, atomic force microscopy and four point resistance probe. Mechanical strain and resistivity were found to decrease with substrate temperature together with a shift in the (110) crystallographic plane towards higher diffraction angles. All films were well adhered to the glass substrates irrespective of their high tensile strain. Surface morphology analysis revealed the presence of nano-structured stress relief patterns which can enhance the nucleation sites for subsequent CuInSe{sub 2} deposition. A high-resolution cross sectional image showed the columnar growth of the films. Surface roughness analysis revealed that roughness increased with increase in substrate temperature.

  17. TiAlN coatings deposited by triode magnetron sputtering varying the bias voltage

    Energy Technology Data Exchange (ETDEWEB)

    Devia, D.M. [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Cra. 27 No. 64-60, Manizales, Caldas (Colombia); Laboratorio de Materiales, Universidad Nacional de Colombia Sede Medellin, Sede Medellin, Antioquia (Colombia); Restrepo-Parra, E., E-mail: erestrepopa@unal.edu.co [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Cra. 27 No. 64-60, Manizales, Caldas (Colombia); Arango, P.J. [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Cra. 27 No. 64-60, Manizales, Caldas (Colombia); Tschiptschin, A.P. [Escola Politecnica da Universidade de Sao Paulo, Depto. de Engenharia Metalurgica e de Materiais, Sao Paulo, SP (Brazil); Velez, J.M. [Laboratorio de Materiales, Universidad Nacional de Colombia Sede Medellin, Sede Medellin, Antioquia (Colombia)

    2011-05-01

    TiAlN films were deposited on AISI O1 tool steel using a triode magnetron sputtering system. The bias voltage effect on the composition, thickness, crystallography, microstructure, hardness and adhesion strength was investigated. The coatings thickness and elemental composition analyses were carried out using scanning electron microscopy (SEM) together with energy dispersive X-ray (EDS). The re-sputtering effect due to the high-energy ions bombardment on the film surface influenced the coatings thickness. The films crystallography was investigated using X-ray diffraction characterization. The X-ray diffraction (XRD) data show that TiAlN coatings were crystallized in the cubic NaCl B1 structure, with orientations in the {l_brace}1 1 1{r_brace}, {l_brace}2 0 0{r_brace} {l_brace}2 2 0{r_brace} and {l_brace}3 1 1{r_brace} crystallographic planes. The surface morphology (roughness and grain size) of TiAlN coatings was investigated by atomic force microscopy (AFM). By increasing the substrate bias voltage from -40 to -150 V, hardness decreased from 32 GPa to 19 GPa. Scratch tester was used for measuring the critical loads and for measuring the adhesion.

  18. Deposition of TiN/CrN hard superlattices by reactive d.c. magnetron sputtering

    Indian Academy of Sciences (India)

    Harish C Barshilia; K S Rajam

    2003-02-01

    Multilayer superlattice coatings of TiN/CrN were deposited on silicon substrates using a reactive d.c. magnetron sputtering process. Superlattice period, also known as modulation wavelength (), was controlled by controlling the dwell time of the substrate underneath Ti and Cr targets. X-ray diffraction (XRD), nanoindentation and atomic force microscopy (AFM) were used to characterize the films. The XRD data showed 1st and 2nd order satellite reflections along the principal reflection for films having 132 Å $\\geq \\Lambda \\geq$ 84 Å, thus confirming the formation of superlattice. The multilayer coatings exhibited hardness () as high as 3200 kg/mm2, which is 2 times the rule-of-mixtures value (i.e. $H_{TiN}$ = 2200 kg/mm2 and $H_{CrN}$ = 1000 kg/mm2). Detailed investigations on the effects of various process parameters indicated that hardness of the superlattice coatings was affected not only by modulation wavelength but also by nitrogen partial pressure and ion bombardment during deposition.

  19. Microstructural and magnetic properties of thick ({>=}10 {mu}m) magnetron sputtered barium ferrite films

    Energy Technology Data Exchange (ETDEWEB)

    Dehlinger, A.S. [Universite de Lyon, Institut des Nanotechnologies de Lyon INL-UMR 5270, CNRS, INSA Lyon, Villeurbanne F-69621 (France); Le Berre, M., E-mail: martine.leberre@insa-lyon.f [Universite de Lyon, Institut des Nanotechnologies de Lyon INL-UMR 5270, CNRS, INSA Lyon, Villeurbanne F-69621 (France); Canut, B. [Universite de Lyon, Institut des Nanotechnologies de Lyon INL-UMR 5270, CNRS, INSA Lyon, Villeurbanne F-69621 (France); Chatelon, J.P. [DIOM, Universite Jean Monnet, Saint Etienne F-42023 (France); Albertini, D. [Universite de Lyon, Institut des Nanotechnologies de Lyon INL-UMR 5270, CNRS, INSA Lyon, Villeurbanne F-69621 (France); Perrot, S. [RADIALL, Voiron F-38500 (France); Givord, D. [Institut Louis Neel, UPR 5051, Grenoble F-38042 (France); Rousseau, J.J. [DIOM, Universite Jean Monnet, Saint Etienne F-42023 (France)

    2010-11-15

    This work focuses on the properties of 10-15 {mu}m thick barium M-type hexaferrite (BaFe{sub 12}O{sub 19} or BaM) films deposited by non-reactive RF magnetron sputtering on alumina substrates. High deposition rates were achieved through deposition at room temperature and operation at an RF power of 100 W. By varying sputtering gas pressure, the dc magnetic properties were correlated with structural, morphological and compositional properties obtained by X-ray diffraction (XRD), atomic force microscopy (AFM) and Rutherford backscattering spectrometry (RBS), respectively. A deposition pressure of P=3 Pa enables one to reach the best compromise between high deposition rate (0.75 {mu}m/h) and adequate crystallographic, stoichiometric and magnetostatic properties. Finally the gyromagnetic properties at high frequency were assessed through the characterization of coplanar isolator up to 60 GHz. As such, hexaferrite films prepared using this technique may offer opportunities for the next generation of self-biased planar microwave devices.

  20. Characteristics of HT-LiCoO2 cathode films synthesized by Rf magnetron sputtering

    Science.gov (United States)

    Kumar, P. Jeevan; Babu, K. Jayanth; Hussain, O. M.

    2012-06-01

    Polycrystalline HT-LiCoO2 films were successfully synthesized by rf magnetron sputtering. The films were characterized by the studying their phase, structure, and morphology using ex-situ measurements of X-ray diffractometry (XRD), Raman Spectroscopy, Atomic force micrometry (AFM). Electrochemical performance evaluation indicated that the as grown LiCoO2 films The anodic electrochemical performances of the films have been evaluated by cyclic voltammetry (CV) at a scan rate of 0.5 mV/s and by galvanostatic cycling, with lithium metal as the counter and the reference electrode, and cycled in the range of 3.0 - 4.2 V at a current density of 50 μA/cm2. The films show a discharge capacity at the 20th cycle of 58 μAh cm-2μm- Keywords: LiCoO which exhibited excellent capacity retention with a small capacity fade which exhibited excellent capacity retention with a small capacity fade.

  1. Property modulation of NiO films grown by radio frequency magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Chen, T.F.; Wang, A.J.; Shang, B.Y. [Department of Physics, Beijing Normal University, Beijing 100875 (China); Wu, Z.L.; Li, Y.L. [Analytical and Testing Center, Beijing Normal University, Beijing 100875 (China); Wang, Y.S., E-mail: yswang@bnu.edu.cn [Department of Physics, Beijing Normal University, Beijing 100875 (China)

    2015-09-15

    Highlights: • Controllable and preferential growth of NiO films were performed successfully on Si substrates. • Oxygen partial pressure lower than 6% is crucial for transformation of the preferential growth. • The film deposition rate is very sensitive to the low oxygen partial pressure. • NiO lattice expands quadratically with the increasing of oxygen partial pressures. • The films contain high concentration of Ni vacancies and show a good rectifying behavior with p-Si. - Abstract: NiO films were grown on Si substrates by radio frequency magnetron sputtering. The films were analyzed by an X-ray diffractometer, scanning electron microscope, X-ray photoelectron spectroscopy and SCS-4200 semiconductor characterization system. Evolution of the growth mode, lattice strain, morphology, chemistry states and electrical properties were investigated systematically. The film deposition rates and properties are very sensitive to the oxygen partial pressure lower than 10%. It is crucial to decrease the oxygen partial pressure to 2% for (1 1 1) film growth and the films would transform from (1 1 1) to (1 0 0) as the oxygen partial pressure increases from 2% to 6%. The film lattice expands quadratically with the increase of oxygen partial pressure. Nickel vacancy concentration in (1 1 1) films is much higher than that in (1 0 0) films. All (1 0 0) films show good rectifying behavior with p-Si. The film growth modes and properties could be modulated flexibly by controlling the oxygen partial pressures.

  2. Photoluminescence properties of ZnO thin films prepared by DC magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    YANG Bing-chu; LIU Xiao-yan; GAO Fei; MA Xue-long

    2008-01-01

    ZnO thin films were prepared by direct current(DC) reactive magnetron sputtering under different oxygen partial pressures.And then the samples were annealed in vacuum at 450 ℃. The effects of the oxygen partial pressures and the treatment of annealing in vacuum on the photoluminescence and the concentration of six intrinsic defects in ZnO thin films such as oxygen vacancy(Vo),zinc vacancy(VZn), antisite oxygen(OZn), antisite zinc(ZnO), interstitial oxygen(Oi) and interstitial zinc(Zni) were studied. The results show that a green photoluminescence peak at 520 nm can be observed in all the samples, whose intensity increases with increasing oxygen partial pressure; for the sample annealed in vacuum, the intensity of the green peak increases as well. The green photoluminescence peak observed in ZnO may be attributed to zinc vacancy, which probably originates from transitions between electrons in the conduction band and zinc vacancy levels, or from transitions between electrons in zinc vacancy levels and up valence band.

  3. Characterization of magnetron-sputtered partially ionized deposition as a function of metal and gas species

    Energy Technology Data Exchange (ETDEWEB)

    Allain, Monica M. C. [University of Illinois, Urbana, Illinois 61801 (United States); Hayden, D. B. [University of Illinois, Urbana, Illinois 61801 (United States); Juliano, D. R. [University of Illinois, Urbana, Illinois 61801 (United States); Ruzic, D. N. [University of Illinois, Urbana, Illinois 61801 (United States)

    2000-05-01

    Conventional magnetron sputter deposition with a rf inductively coupled plasma (ICP) has demonstrated that ionized metal fluxes can be effectively utilized to fill trenches and vias with high aspect ratios. The ICP is created with a seven turn (1/2 wavelength), water cooled coil located between the magnetron cathode and the substrate. A large fraction of the metal atoms sputtered from the magnetron cathode are ionized by the ICP. These ions are accelerated across the sheath toward the substrate and deposited at normal incidence, by placing a negative bias on the substrate. A gridded energy analyzer configured with a quartz crystal microbalance is located in the center of the substrate plane to determine the ion and neutral deposition rates. While keeping the magnetron power, rf coil, target to substrate distance, pressure and diagnostic location constant, the ionization fraction was measured for two metal targets: Cu and Ti using three different working gases: Kr, Ar and Ne. Variations in target materials and working gases are shown to have an effect on ionization and deposition rates. The ionization rate is a sensitive function of the metal's ionization potential. The electron energy distribution in the plasma is affected by the sputtered metal and the working gases' ionization potential. (c) 2000 American Vacuum Society.

  4. Natural fiber composites with EMI shielding function fabricated using VARTM and Cu film magnetron sputtering

    Science.gov (United States)

    Xia, Changlei; Ren, Han; Shi, Sheldon Q.; Zhang, Hualiang; Cheng, Jiangtao; Cai, Liping; Chen, Kathleen; Tan, Hwa-Shen

    2016-01-01

    To fabricate kenaf fiber composites with electromagnetic interference (EMI) shielding function, the technique of vacuum-assisted resin transfer molding (VARTM) and Cu film magnetron sputtering were employed. The EMI shielding effectiveness (SE) and composite surface characteristics were examined with PNA Network Analyzer, Quanta 200 environmental scanning electron microscope and OCA20 contact angle meter. After being Cu-sputter coated for 0.5 h, 1 h, 2 h, and 3 h, the EMI SE values were increased to be 23.8 dB, 32.5 dB, 43.3 dB, and 48.3 dB, which denoted 99.5799%, 99.9437%, 99.9953%, or 99.9985% incident signal was blocked, respectively. The SEM observations revealed that the smoother surface of the composites was obtained by longer time sputtering, resulting in the SE improvement. The contact angle increased from 49.6° to 129.5° after 0.5 h sputtering, which indicated that the coated Cu film dramatically improved the hydrophobic property of composite. When the coating time increased to 3 h, the contact angle decreased to 51.0° because the composite surface roughness decreased with the increase in coating time.

  5. Study on ZnO:Al (ZAO) films by DC reaction magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    裴志亮; 孙超; 谭明晖; 关德慧; 肖金泉; 黄荣芳; 闻立时

    2001-01-01

    The high quality ZnO: A1 films were successfully produced by DC reaction magnetron sputtering technology. The Al-doping effect on electrical and optical properties and its scattering mechanism are discussed in detail. The analyses of X-ray diffractometer (XRD), X-ray photoelectron spectroscopy(XPS) and high resolution Auger electron spectroscopy (AES) show that Al2O3 could be effectively removed by controlling oxygen flow and Al-doping concentration during deposition of ZnO: Al films. Zn, Al and oxygen elements are well distributed through the films. For highly degenerated ZnO:A1 semi-conductive thin films, the theoretical and experimental results reveal that the ionized impurity. scattering dominates the Hall mobility in the films in the low-temperature range, while the lattice vibration scattering becomes a major scattering mechanism in the high-temperature range. The grain boundary scattering only plays a major role in the ZAO films with small grain size (as compared to the electron mean free path). The photoelectric properties of ZAO films show that it has low resistivity ( ~ 5 × 10-4 Ωcm), and the transmittance in visible range and the reflectance in IR region are above 80% and 60%, respectively.

  6. Fractal features of CdTe thin films grown by RF magnetron sputtering

    Science.gov (United States)

    Hosseinpanahi, Fayegh; Raoufi, Davood; Ranjbarghanei, Khadijeh; Karimi, Bayan; Babaei, Reza; Hasani, Ebrahim

    2015-12-01

    Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

  7. RF-Magnetron Sputtered Conductive Perovskite BaPbO3 Films

    Science.gov (United States)

    Luo, Yih-Rong; Wu, Jenn-Ming

    2003-01-01

    The crystallinity, chemical bonding, and electrical properties of BaPbO3 (BPO) thin films prepared by rf-magnetron sputtering on SiO2/Si substrates were investigated. The working pressure and the Ar/O2 ratio during sputtering are two of the most important factors that influence the characteristics of the prepared BPO films. Both increasing working pressure and increasing Ar/O2 ratio enhanced the crystallization of the perovskite BPO phase and yielded films with low resistivity. Sputtering in an environment with a working pressure of 80 mTorr and Ar/O2 = 90/10 at 350°C gave deposited BPO films with a low resistivity of 0.9 × 10-3 Ωcm, and a high carrier concentration of 8.3 × 1020 electrons/cm3, which values were almost equal to those of the bulk BaPbO3. X-ray photoelectron spectroscopy (XPS) revealed that Pb4+ ions were formed in the BPO films as the working pressure and the Ar/O2 ratio were increased, enhancing the crystallization of the perovskite BPO phase to yield films of lower resistivity.

  8. Superior biofunctionality of dental implant fixtures uniformly coated with durable bioglass films by magnetron sputtering.

    Science.gov (United States)

    Popa, A C; Stan, G E; Enculescu, M; Tanase, C; Tulyaganov, D U; Ferreira, J M F

    2015-11-01

    Bioactive glasses are currently considered the suitable candidates to stir the quest for a new generation of osseous implants with superior biological/functional performance. In congruence with this vision, this contribution aims to introduce a reliable technological recipe for coating fairly complex 3D-shaped implants (e.g. dental screws) with uniform and mechanical resistant bioactive glass films by the radio-frequency magnetron sputtering method. The mechanical reliability of the bioactive glass films applied to real Ti dental implant fixtures has been evaluated by a procedure comprised of "cold" implantation in pig mandibular bone from a dead animal, followed by immediate tension-free extraction tests. The effects of the complex mechanical strains occurring during implantation were analysed by scanning electron microscopy coupled with electron dispersive spectroscopy. Extensive biocompatibility assays (MTS, immunofluorescence, Western blot) revealed that the bioactive glass films stimulated strong cellular adhesion and proliferation of human dental pulp stem cells, without promoting their differentiation. The ability of the implant coatings to conserve a healthy stem cell pool is promising to further endorse the fabrication of new osseointegration implant designs with extended lifetime.

  9. Photoelectric properties of ITO thin films deposited by DC magnetron sputtering*

    Institute of Scientific and Technical Information of China (English)

    Liu Wei; Cheng Shuying

    2011-01-01

    As anti-reflecting thin films and transparent electrodes of solar cells, indium tin oxide (ITO) thin films were prepared on glass substrates by DC magnetron sputtering process. The main sputtering conditions were sputtering power, substrate temperature and work pressure. The influence of the above sputtering conditions on the transmittance and conductivity of the deposited ITO films was investigated. The experimental results show that,the transmittance and the resistivity decrease as the sputtering power increases from 30 to 90 W. When the substrate temperature increases from 25 to 150 ℃, the transmittance increases slightly whereas the resistivity decreases. As the work pressure increases from 0.4 to 2.0 Pa, the transmittance decreases and the resistivity increases. When the sputtering power, substrate temperature and work pressure are 30 W, 150 ℃, 0.4 Pa respectively, the ITO thin films exhibit good electrical and optical properties, with resistivity below 10-4 Ω.cm and the transmittance in the visible wave band beyond 80%. Therefore, the ITO thin films are suitable as transparent electrodes of solar cells.

  10. Novel high power impulse magnetron sputtering enhanced by an auxiliary electrical field.

    Science.gov (United States)

    Li, Chunwei; Tian, Xiubo

    2016-08-01

    The high power impulse magnetron sputtering (HIPIMS) technique is a novel highly ionized physical vapor deposition method with a high application potential. However, the electron utilization efficiency during sputtering is rather low and the metal particle ionization rate needs to be considerably improved to allow for a large-scale industrial application. Therefore, we enhanced the HIPIMS technique by simultaneously applying an electric field (EF-HIPIMS). The effect of the electric field on the discharge process was studied using a current sensor and an optical emission spectrometer. Furthermore, the spatial distribution of the electric potential and electric field during the EF-HIPIMS process was simulated using the ANSYS software. The results indicate that a higher electron utilization efficiency and a higher particle ionization rate could be achieved. The auxiliary anode obviously changed the distribution of the electric potential and the electric field in the discharge region, which increased the plasma density and enhanced the degree of ionization of the vanadium and argon gas. Vanadium films were deposited to further compare both techniques, and the morphology of the prepared films was investigated by scanning electron microscopy. The films showed a smaller crystal grain size and a denser growth structure when the electric field was applied during the discharge process.

  11. Three-Dimensional, Fibrous Lithium Iron Phosphate Structures Deposited by Magnetron Sputtering.

    Science.gov (United States)

    Bünting, Aiko; Uhlenbruck, Sven; Sebold, Doris; Buchkremer, H P; Vaßen, R

    2015-10-14

    Crystalline, three-dimensional (3D) structured lithium iron phosphate (LiFePO4) thin films with additional carbon are fabricated by a radio frequency (RF) magnetron-sputtering process in a single step. The 3D structured thin films are obtained at deposition temperatures of 600 °C and deposition times longer than 60 min by using a conventional sputtering setup. In contrast to glancing angle deposition (GLAD) techniques, no tilting of the substrate is required. Thin films are characterized by X-ray diffraction (XRD), Raman spectrospcopy, scanning electron microscopy (SEM), cyclic voltammetry (CV), and galvanostatic charging and discharging. The structured LiFePO4+C thin films consist of fibers that grow perpendicular to the substrate surface. The fibers have diameters up to 500 nm and crystallize in the desired olivine structure. The 3D structured thin films have superior electrochemical properties compared with dense two-dimensional (2D) LiFePO4 thin films and are, hence, very promising for application in 3D microbatteries.

  12. Formation Mechanism of Fe Nanocubes by Magnetron Sputtering Inert Gas Condensation.

    Science.gov (United States)

    Zhao, Junlei; Baibuz, Ekaterina; Vernieres, Jerome; Grammatikopoulos, Panagiotis; Jansson, Ville; Nagel, Morten; Steinhauer, Stephan; Sowwan, Mukhles; Kuronen, Antti; Nordlund, Kai; Djurabekova, Flyura

    2016-04-26

    In this work, we study the formation mechanisms of iron nanoparticles (Fe NPs) grown by magnetron sputtering inert gas condensation and emphasize the decisive kinetics effects that give rise specifically to cubic morphologies. Our experimental results, as well as computer simulations carried out by two different methods, indicate that the cubic shape of Fe NPs is explained by basic differences in the kinetic growth modes of {100} and {110} surfaces rather than surface formation energetics. Both our experimental and theoretical investigations show that the final shape is defined by the combination of the condensation temperature and the rate of atomic deposition onto the growing nanocluster. We, thus, construct a comprehensive deposition rate-temperature diagram of Fe NP shapes and develop an analytical model that predicts the temporal evolution of these properties. Combining the shape diagram and the analytical model, morphological control of Fe NPs during formation is feasible; as such, our method proposes a roadmap for experimentalists to engineer NPs of desired shapes for targeted applications.

  13. Target voltage behaviour of a vanadium-oxide thin film during reactive magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    Wang Tao; Jiang Ya-Dong; Yu He; Wu Zhi-Ming; Zhao He-Nan

    2011-01-01

    This paper simulates reactive magnetron-sputtering in constant current mode in a Vanadium-O2/Ar system equipped with a DC power supply by adopting both kinetics model and Berg's model. The target voltage during the reactive sputtering has been investigated as a function of reactive gas flow. Both experiments and simulations demonstrate a hysteresis curve with respect to the oxygen supply. The time-dependent variation of the target mode is studied by measuring the target voltage for various reactive oxygen gas flows and pre-sputtering times. The presputtering time increases with the increased initial target voltage. Furthermore, a corresponding time-dependent model simulating target voltage changes is also proposed. Based on these simulations, we find some relationships between the discharge voltage behaviour and the properties of the formed oxide. In this way, a better understanding of the target voltage changes during reactive sputtering can be achieved. We conclude that the presented theoretical models for parameter-dependent case and time-dependent case are in qualitative agreement with the experimental results and can be used to comprehend the target voltage behaviour in the deposition of vanadium oxide thin films.

  14. RF magnetron sputtering deposition of CdTe passivation on HgCdTe

    Science.gov (United States)

    Rutkowski, Jaroslaw; Adamiec, Krzysztof; Rogalski, Antoni

    1998-04-01

    In this study, we report the RF magnetron sputtering growth and characterization of CdTe passivant on bulk n-type HgCdTe. Our investigations include the HgCdTe surface preparation and in-situ pretreatment, deposition-induced surface damage, interface charge, CdTe film stoichiometry, and thermal stability. The metal-insulator-semiconductor test structures are processed and their electrical properties are measured by capacitance-voltage characteristics. The heterostructures are also characterized by reflectance measurement. In order to investigate the passivation properties of CdTe/HgCdTe heterostructures, we have modeled the band diagram of abrupt CdTe/HgCdTe heterojunction. The effect of sputtering growth condition parameters is also reported. The sputtering CdTe layers, exhibit excellent dielectric, insulating and mechano- chemical properties, as well as interface properties. The interfaces are characterized by slight accumulation and a small hysteresis. A carefully controlled growth process and surface pretreatment tailored to the specific material are required in order to obtain near flat band conditions on n- type materials. Additional informations on surface limitations are obtained from analyzing the I-V characteristics of photodiodes with metal gates covering the p-n junction surface location.

  15. CrN thin films prepared by reactive DC magnetron sputtering for symmetric supercapacitors

    KAUST Repository

    Wei, Binbin

    2016-12-29

    Supercapacitors have been becoming indispensable energy storage devices in micro-electromechanical systems and have been widely studied over the past few decades. Transition metal nitrides with excellent electrical conductivity and superior cycling stability are promising candidates as supercapacitor electrode materials. In this work, we report the fabrication of CrN thin films using reactive DC magnetron sputtering and further their applications for symmetric supercapacitors for the first time. The CrN thin film electrodes fabricated under the deposition pressure of 3.5 Pa show an areal specific capacitance of 12.8 mF cm at 1.0 mA cm and high cycling stability with 92.1% capacitance retention after 20 000 cycles in a 0.5 M HSO electrolyte. Furthermore, our developed CrN//CrN symmetric supercapacitor can deliver a high energy density of 8.2 mW h cm at the power density of 0.7 W cm along with outstanding cycling stability. Thus, the CrN thin films have great potential for application in supercapacitors and other energy storage systems.

  16. Investigation of annealing temperature effect on magnetron sputtered cadmium sulfide thin film properties

    Science.gov (United States)

    Akbarnejad, E.; Ghorannevis, Z.; Abbasi, F.; Ghoranneviss, M.

    2016-12-01

    Cadmium sulfide (CdS) thin films are deposited on the fluorine doped tin oxide coated glass substrate using the radio frequency magnetron sputtering setup. The effects of annealing in air on the structural, morphological, and optical properties of CdS thin film are studied. Optimal annealing temperature is investigated by annealing the CdS thin film at different annealing temperatures of 300, 400, and 500 °C. Thin films of CdS are characterized by X-ray diffractometer analysis, field emission scanning electron microscopy, atomic force microscopy, UV-Vis-NIR spectrophotometer and four point probe. The as-grown CdS films are found to be polycrystalline in nature with a mixture of cubic and hexagonal phases. By increasing the annealing temperature to 500 °C, CdS film showed cubic phase, indicating the phase transition of CdS. It is found from physical characterizations that the heat treatment in air increased the mean grain size, the transmission, and the surface roughness of the CdS thin film, which are desired to the application in solar cells as a window layer material.

  17. Preparation of Indium Tin Oxide Films on Polycarbonate substrates by Radio-frequency Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    LIU Jing; GONG Jian; GU Zhen'an

    2005-01-01

    Indium tin oxide ( ITO ) thin films ( 100 ± 10 nm) were deposited on PC ( polycarbonate ) and glass substrates by rf( radio-frequency ) magnetron sputtering. The oxygen content of the ITO films was changed by variation of the sputtering gas composition. All the other deposition parameters were kept constant. The sheet resistance, optical transmittance and microstructure of ITO films were investigated using a four-point probe, spectrophotometer, X- ray diffractometer( XRD ) and atomic force microscope ( AFM ). Sheet resistances for the ITO films with optical transmittance more than 75% on PC substrates varied from 40 Ω/ cm2 to more than 104 Ω/cm2 with increasing oxygen partial pressure from 0 to about 2% . The same tendency of sheet resistances increasing with increasing oxygen partial pressure was observed on glass substrates. The X-ray diffraction data indicated polycrystalline films with grain orientations predominantly along (440) and (422) directions. The intensities of (440) and (422) peaks increased slightly with the increase of oxygen partial pressure both on PC and glass substrates. The AFM images show that the ITO films on PC substrates were dense and uniform. The average grain size of the films was about 40nm.

  18. Structure-Diffusion Relationship of Magnetron-Sputtered WTi Barriers Used in Indium Interconnections

    Science.gov (United States)

    Le Priol, A.; Le Bourhis, E.; Renault, P.-O.; Muller, P.; Sik, H.

    2013-11-01

    Tungsten-titanium (WTi) thin films are known as potential adhesion promoters and diffusion barriers. The barrier efficiency of WTi thin films against indium (In) diffusion was experimentally studied by x-ray diffraction (XRD) measurements during in situ annealing. Specific multilayered samples were designed to estimate the diffusion barrier properties using the Ni/In system. These diffusion samples were made up of a 100-nm-thick WTi layer prepared by magnetron sputtering from an alloyed target (W:Ti ≈ 70:30 at.%), sandwiched between Ni and Au/In layers. WTi film microstructures were observed to depend on the working pressure. Diffusion barrier breakdown was monitored upon annealing by the formation of intermetallic compounds (IMC) (intermixing between Ni and In). Annealing was performed at temperatures of 573 K, 623 K, and 673 K (homologous temperatures T/T_m^In ˜eq 1.34, 1.45, and 1.57, respectively) and under primary vacuum. The diffusion coefficients of In in WTi were determined. The correlation between WTi film microstructure and diffusion barrier efficiency was established. Better diffusion barrier performance was obtained for WTi films with dense microstructure associated with a compressive residual stress state. Hence, tuning the sputtering conditions allows significant improvement of barrier performance against diffusion through a change of the film microstructure.

  19. Properties of Al-doped Copper Nitride Films Prepared by Reactive Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Cu3N and AlxCu3N films were prepared with reactive magnetron sputtering method. The two films were deposited on glass substrates at 0.8 Pa N2 partial pressure and 100 ℃ substrate temperature by using a pure Cu and Al target, respectively. X-ray diffraction (XRD) measurements show that the un-doped film was composed of Cu3N crystallites with anti-ReO3 structure and adopted [111] preferred orientation. XRD shows that the growth of Al-doped copper nitride films (AlxCu3N) was affected strongly by doping Al, the intensity of [111] peak decreases with increasing the concentration of Al and the high concentration of Al could prevent the Cu3N from crystallization. AFM shows that the surface of AlxCu3N film is smoother than that of Cu3N film. Compared with the Cu3N films, the resistivities of the Al-doped copper nitride films (AlxCu3N) have been reduced, and the microhardness has been enhanced.

  20. Distance-dependent plasma composition and ion energy in high power impulse magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ehiasarian, Arutiun P; Andersson, Joakim; Anders, Andr& #233

    2010-04-18

    The plasma composition of high power impulse magnetron sputtering (HIPIMS) has been studied for titanium and chromium targets using a combined energy analyser and quadrupole mass spectrometer. Measurements were done at distances from 50 to 300 mm from the sputtering target. Ti and Cr are similar in atomic mass but have significantly different sputter yields, which gives interesting clues on the effect of the target on plasma generation and transport of atoms. The Ti and Cr HIPIMS plasmas operated at a peak target current density of ~;;0.5 A cm-2. The measurements of the argon and metal ion content as well as the ion energy distribution functions showed that (1) singly and doubly charged ions were found for argon as well as for the target metal, (2) the majority of ions were singly charged argon for both metals at all distances investigated, (3) the Cr ion density was maintained to distances further from the target than Ti. Gas rarefaction was identified as a main factor promoting transport of metal ions, with the stronger effect observed for Cr, the material with higher sputter yield. Cr ions were found to displace a significant portion of the gas ions, whereas this was less evident in the Ti case. The observations indicate that the presence of metal vapour promotes charge exchange and reduces the electron temperature and thereby practically prevents the production of Ar2+ ions near the target. The content of higher charge states of metal ions depends on the probability of charge exchange with argon.

  1. Thermoelectric properties of Al-doped Mg2Si thin films deposited by magnetron sputtering

    Science.gov (United States)

    Chen, Zhi-jian; Zhou, Bai-yang; Li, Jian-xin; Wen, Cui-lian

    2016-11-01

    The Al-doped Mg2Si thin films were fabricated by two-target alternative magnetron sputtering technique, and the influences of different Al doping contents on the thermoelectric properties of Al-doped Mg2Si thin films were investigated. The compositions, crystal structures, electronic transport properties and thermoelectric properties of the thin films were examined using energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), Hall coefficient measurement and Seebeck coefficient measurement system, respectively. The EDS results show that the thin films doped with Al target sputtering power of 30 W, 60 W and 90 W have the Al content of 0.68 at.%, 1.56 at.% and 2.85 at.%, respectively. XRD results indicate that the diffraction peaks of Mg2Si become stronger with increasing Al dopant. The results of Hall coefficient measurement and Seebeck coefficient measurement system reveal that all the samples are n-type. The conductivities of Al-doped Mg2Si thin films are significantly greater than that of undoped Mg2Si thin film, and increase with increasing Al doping content. With the increase of temperature, the absolute value of the Seebeck coefficients of Mg2Si base thin films increase firstly and then decrease. The maximum power factor obtained is 3.8 mW m-1 k-2 for 1.56 at.% Al-doped Mg2Si thin film at 573 K.

  2. Deposition and characterization of TiZrV-Pd thin films by dc magnetron sputtering

    CERN Document Server

    Wang, Jie; Xu, Yan-Hui; Wei, Wei; Fan, Le; Pei, Xiang-Tao; Hong, Yuan-Zhi; Wang, Yong

    2015-01-01

    TiZrV film is mainly applied in the ultra-high vacuum pipe of storage ring. Thin film coatings of palladium which was added onto the TiZrV film to increase the service life of nonevaporable getters and enhance pumping speed for H2, was deposited on the inner face of stainless steel pipes by dc magnetron sputtering using argon gas as the sputtering gas. The TiZrV-Pd film properties were investigated by atomic force microscope (AFM), scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS) and X-Ray Diffraction (XRD). The grain size of TiZrV and Pd film were about 0.42~1.3 nm and 8.5~18.25 nm respectively. It was found that the roughness of TiZrV films was small, about 2~4 nm, for Pd film it is large, about 17~19 nm. PP At. % of Pd in TiZrV/Pd films varied from 86.84 to 87.56 according to the XPS test results.

  3. Structural and optical properties of zinc selenide thin films deposited by rf magnetron sputtering

    Science.gov (United States)

    Rizzo, Antonella; Caneve, Luisa; Scaglione, Salvatore; Tagliente, M. A.

    1999-09-01

    In this work, ZnSe thin films were deposited by radio frequency magnetron sputtering onto oriented silicon substrates. Three sets of samples were produced by varying the argon working gas pressure, and changing the sputtering power supply. The effect of the different growth conditions on the structural and optical properties of the ZnSe films was investigated by using XRD and FTIR spectroscopy. In particular, x-ray diffraction was used in order to study the residual strains and texture. The ZnSe coatings were grown in the cubic polymorph with the grains preferentially oriented for all the investigated pressures with the exception of 0.5 Pa. An in-plane residual stress reversal, which changed from compressive to tensile by going from the low to the high-pressure sample set, was observed. At the 0.5 Pa pressure, the ZnSe coatings were both in compressive and tensile state, according to the power supply value. These result have been correlated with the momentum of reflected neutral in order to find an exhaustive description of the deposition process. At low momentum values, the ZnSe films show tensile state, low refractive index, grains preferentially oriented, while at high momentum they were in compressive state, refractive index very alike to the bulk and grains randomly oriented.

  4. Application of RF magnetron sputtering for growth of AZO on glass substrate

    Science.gov (United States)

    Ghorannevis, Z.; Akbarnejad, E.; Salar Elahi, A.; Ghoranneviss, M.

    2016-08-01

    Aluminum zinc oxide (AZO), as one of the most promising transparent conducting oxide (TCO) materials, has now been widely used in thin film solar cells. In this study the optimization process of the RF magnetron sputtered AZO films was performed at room temperature by studying its physical properties such as structural, optical, electrical and morphological at different deposition times (10, 20, 40 and 60 min) for its use as a front contact for the Cadmium Telluride (CdTe) based thin film solar cell applications. Influence of the deposition time was investigated on the physical properties of the AZO thin film by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), spectrophotometer and four point probes. XRD analysis suggests that the preferred orientation of grains for all the samples prepared at different growth times are along (002) plane having the hexagonal structure. From optical measurements the films show an average transmission over 60%. Moreover it was found that by increasing the growth time, which implies increasing the film thicknesses as well as improving the crystallinity the resistivity of the grown films decrease from the 10-2 Ωcm to the order of 10-3 Ωcm.

  5. Effects of Various RF Powers on CdTe Thin Film Growth Using RF Magnetron Sputtering

    Science.gov (United States)

    Alibakhshi, Mohammad; Ghorannevis, Zohreh

    2016-09-01

    Cadmium telluride (CdTe) film was deposited using the magnetron sputtering system onto a glass substrate at various deposition times and radio frequency (RF) powers. Ar gas was used to generate plasma to sputter the CdTe atoms from CdTe target. Effects of two experimental parameters of deposition time and RF power were investigated on the physical properties of the CdTe films. X-ray Diffraction (XRD) analysis showed that the films exhibited polycrystalline nature of CdTe structure with the (111) orientation as the most prominent peak. Optimum condition to grow the CdTe film was obtained and it was found that increasing the deposition time and RF power increases the crystallinity of the films. From the profilometer and XRD data's, the thicknesses and crystal sizes of the CdTe films increased at the higher RF power and the longer deposition time, which results in affecting the band gap as well. From atomic force microscopy (AFM) analysis we found that roughnesses of the films depend on the deposition time and is independent of the RF power.

  6. Corrosion resistance of CrN thin films produced by dc magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ruden, A. [Laboratorio de Física del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 vía al Magdalena, Manizales (Colombia); Laboratorio de Recubrimientos Duros y Aplicaciones Industriales–RDAI, Universidad del Valle, Calle 13 N° 100-00 Ciudadela Meléndez, Cali (Colombia); Departamento de matemáticas, Universidad Tecnológica de Pereira, Pereira (Colombia); Restrepo-Parra, E., E-mail: erestrepopa@unal.edu.co [Laboratorio de Física del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 vía al Magdalena, Manizales (Colombia); Paladines, A.U.; Sequeda, F. [Laboratorio de Recubrimientos Duros y Aplicaciones Industriales–RDAI, Universidad del Valle, Calle 13 N° 100-00 Ciudadela Meléndez, Cali (Colombia)

    2013-04-01

    In this study, the electrochemical behavior of chromium nitride (CrN) coatings deposited on two steel substrates, AISI 304 and AISI 1440, was investigated. The CrN coatings were prepared using a reactive d.c. magnetron sputtering deposition technique at two different pressures (P1 = 0.4 Pa and P2 = 4 Pa) with a mixture of N{sub 2}–Ar (1.5-10). The microstructure and crystallinity of the CrN coatings were investigated using X-ray diffraction. The aqueous corrosion behavior of the coatings was evaluated using two methods. The polarization resistance (Tafel curves) and electrochemical impedance spectra (EIS) in a saline (3.5% NaCl solution) environment were measured in terms of the open-circuit potentials and polarization resistance (R{sub p}). The results indicated that the CrN coatings present better corrosion resistance and R{sub p} values than do the uncoated steel substrates, especially for the coatings produced on the AISI 304 substrates, which exhibited a strong enhancement in the corrosion resistance. Furthermore, better behavior was observed for the coatings produced at lower pressures (0.4 Pa) than those grown at 4 Pa.

  7. Osteoblast proliferation on hydroxyapatite thin coatings produced by right angle magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Mello, A [Instituto Militar de Engenharia, IME, Rio de Janeiro, 22290-270, RJ (Brazil); Hong, Z [Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208 (United States); Rossi, A M [Centro Brasileiro de Pesquisas FIsicas, Rua Dr. Xavier Sigaud, 150, Rio de Janeiro, 22290-180, RJ (Brazil); Luan, L [Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208 (United States); Farina, M [Instituto de Ciencias Biomedicas, Universidade Federal do Rio de Janeiro, Ilha do Fundao, Rio de Janeiro, RJ, 21941-590 (Brazil); Querido, W [Instituto de Ciencias Biomedicas, Universidade Federal do Rio de Janeiro, Ilha do Fundao, Rio de Janeiro, RJ, 21941-590 (Brazil); Eon, J [Inst. QuImica, PUC/RJ, Rio de Janeiro, 21941-590, RJ (Brazil); Terra, J [Centro Brasileiro de Pesquisas FIsicas, Rua Dr. Xavier Sigaud, 150, Rio de Janeiro, 22290-180, RJ (Brazil); Balasundaram, G [Division of Engineering, Brown University, Providence, RI, 02912 (United States); Webster, T [Division of Engineering, Brown University, Providence, RI, 02912 (United States); Feinerman, A [Department of Electrical and Computer Engineering, University of Illinois, Chicago, IL, 60612 (United States); Ellis, D E [Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208 (United States); Ketterson, J B [Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208 (United States); Ferreira, C L [Instituto Militar de Engenharia, IME, Rio de Janeiro, 22290-270, RJ (Brazil)

    2007-06-01

    Right angle magnetron sputtering (RAMS) was used to produce hydroxyapatite (HA) film coatings on pure titanium substrates and oriented silicon wafer (Si(0 0 1)) substrates with flat surfaces as well as engineered surfaces having different forms. Analyses using synchrotron XRD, AFM, XPS, FTIR and SEM with EDS showed that as-sputtered thin coatings consist of highly crystalline hydroxyapatite. The HA coatings induced calcium phosphate precipitation when immersed in simulated body fluid, suggesting in vivo bioactive behavior. In vitro experiments, using murine osteoblasts, showed that cells rapidly adhere, spread and proliferate over the thin coating surface, while simultaneously generating strong in-plane stresses, as observed on SEM images. Human osteoblasts were seeded at a density of 2500 cells cm{sup -2} on silicon and titanium HA coated substrates by RAMS. Uncoated glass was used as a reference substrate for further counting of cells. The highest proliferation of human osteoblasts was achieved on HA RAMS-coated titanium substrates. These experiments demonstrate that RAMS is a promising coating technique for biomedical applications.

  8. Characteristics of ZnO/diamond thin films prepared by RF magnetron sputtering

    CERN Document Server

    Park, Y W; Lee, J G; Baik, Y J; Kim, H J; Jung, H J; Choi, W K; Cho, B H; Park, C Y

    1999-01-01

    Due to its high Young's modulus, diamond has the highest acoustic wave velocity among all materials and is expected to be a candidate substrate for high-frequency surface acoustic wave(SAW) devices. In this study, the deposition of ZnO, as a piezoelectric layer, on a diamond substrate is investigated. ZnO has been fabricated by using RF magnetron sputtering with a ZnO target and various Ar/O sub 2 gas ratios, RF powers, and substrate temperatures at a vacuum of 10 sup - sup 5 Torr. The sputtered ZnO films are characterized by X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), X-ray photoelectron spectroscopy (XPS), and I-V characteristics. All the films show only a (002) orientation. The atomic concentration of the sputtered ZnO films is changed by the oxygen gas ratio, and the ZnO films are grown with a homogeneous composition over their entire thickness. The electrical resistivity of the films varied from 4x10 sup 3 to 7x10 sup 8 OMEGA cm, depending on the Ar/O sub 2 gas ratio. The phase...

  9. Microstructure evolution with varied layer thickness in magnetron-sputtered Ni/C multilayer films.

    Science.gov (United States)

    Peng, Jichang; Li, Wenbin; Huang, Qiushi; Wang, Zhanshan

    2016-08-12

    The microstructure evolution of magnetron-sputtered Ni/C multilayers was investigated by varying the Ni and C layer thickness in the region of a few nanometers. For the samples having 2.6-nm-thick C layers, the interface width increases from 0.37 to 0.81 nm as the Ni layer thickness decreases from 4.3 to 1.3 nm. Especially for the samples with Ni layers less than 2.0 nm, the interface width changes significantly due to the discontinuously distributed Ni crystallites. For the samples having 2.8-nm-thick Ni layers, the interface width increases from 0.37 to 0.59 nm when the C layer thickness decreases from 4.3 to 0.7 nm. The evolution of interface microstructures with varied Ni and C layers is explained based on a proposed simple growth model of Ni and C layers.

  10. Surface morphology of titanium nitride thin films synthesized by DC reactive magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Ţǎlu Ştefan

    2015-03-01

    Full Text Available In this paper the influence of temperature on the 3-D surface morphology of titanium nitride (TiN thin films synthesized by DC reactive magnetron sputtering has been analyzed. The 3-D morphology variation of TiN thin films grown on p-type Si (100 wafers was investigated at four different deposition temperatures (473 K, 573 K, 673 K, 773 K in order to evaluate the relation among the 3-D micro-textured surfaces. The 3-D surface morphology of TiN thin films was characterized by means of atomic force microscopy (AFM and fractal analysis applied to the AFM data. The 3-D surface morphology revealed the fractal geometry of TiN thin films at nanometer scale. The global scale properties of 3-D surface geometry were quantitatively estimated using the fractal dimensions D, determined by the morphological envelopes method. The fractal dimension D increased with the substrate temperature variation from 2.36 (at 473 K to 2.66 (at 673 K and then decreased to 2.33 (at 773 K. The fractal analysis in correlation with the averaged power spectral density (surface yielded better quantitative results of morphological changes in the TiN thin films caused by substrate temperature variations, which were more precise, detailed, coherent and reproducible. It can be inferred that fractal analysis can be easily applied for the investigation of morphology evolution of different film/substrate interface phases obtained using different thin-film technologies.

  11. MICROSTRUCTURE AND PROPERTIES OF ANNEALED ZnO THIN FILMS DEPOSITED BY MAGNETRON SPUTTERING

    Institute of Scientific and Technical Information of China (English)

    J. Lee; W. Gao; Z. Li; M. Hodgson; A. Asadov; J. Metson

    2005-01-01

    ZnO thin films were deposited on a glass substrate by dc (direct current) and rf (radio frequency) magnetron sputtering. Post-deposition annealing was performed in different atmospheres and at different temperatures. The correlation of the annealing conditions with the microstructure and properties of the ZnO films were investigated by ultraviolet-visible spectroscopy, X-ray diffraction, conductivity measurement and scanning electron microscopy. Only the strong 002peak could be observed by X-ray diffraction. The post-deposition annealing of ZnO films was found to alter the film's microstructure and properties, including crystallinity, porosity, grain size, internal stress level and resistivity. It was also found that after annealing, the conductivity of poorly conductive samples often improved. However, annealing does not improve the conductivity of samples with high conductivity prior to annealing. The resistivity of as-grown films annealing on the conductivity of ZnO, it is believed that annealing may alter the presence and distribution of oxygen defects, reduce the lattice stress, cause diffusion, grain coarsening and recrystallization. Annealing will reduce the density of grain boundaries in less dense films,which may decrease the resistivity of the films. On the other hand, annealing may also increase the porosity of thin films, leading to an increase in resistivity.

  12. Dependence of characteristics of LaB6 films on DC magnetron sputtering power

    Institute of Scientific and Technical Information of China (English)

    XU Jing; MIN Guang-hui; HU Li-jie; ZHAO Xiao-hua; YU Hua-shun

    2009-01-01

    Lanthanum hexaboride(LaB6) thin films were deposited on glass substrate by DC magnetron sputtering technology, and the AFM, XRD and scratch tests were used to characterize the deposited films. Influences of sputtering power on the microstructure and the bonding strength between the film and substrate were investigated. AFM observation proves that the dense films are obtained, and the surface roughness is below 4.3 nm. The LaB6 film shows the crystalline structure with the grain less than 100 nm. The XRD pattern identifies that the crystal structure of the films is in accordance with that of bulk LaB6, and the (100) crystal face is dominated. The average grain size decreases firstly and then increases with increasing power, and reaches the minimum of 40 nm when the sputtering power is 44 W. Moreover, the intensity of peaks in XRD pattern increases firstly and decreases afterward with increasing power. When the sputtering power is 50 W, the peak intensity reaches the maximum, showing an intense relationship between the power and crystal structures. The scratch test shows that interface bonding strength of the film/substrate is higher at the power of 44 W than the others, due to the formation of the nanosized crystals and their improved surface energy.

  13. Studies on Magnetron Sputtered ZnO-Ag Films: Adhesion Activity of S. aureus

    Science.gov (United States)

    Geetha, S. R.; Dhivya, P.; Raj, P. Deepak; Sridharan, M.; Princy, S. Adline

    Zinc oxide (ZnO) thin films have been deposited onto thoroughly cleaned stainless steel (AISI SS 304) substrates by reactive direct current (dc) magnetron sputtering and the films were doped with silver (Ag). The prepared thin films were analyzed using X-ray diffraction (XRD), field emission-scanning electron microscopy (FE-SEM) to investigate the structural and morphological properties. The thickness values of the films were in the range of 194 to 256nm. XRD results revealed that the films were crystalline with preferred (002) orientation. Grain size values of pure ZnO films were found to be 19.82-23.72nm. On introducing Ag into ZnO film, the micro-structural properties varied. Adhesion test was carried out with Staphylococcus aureus (S. aureus) in order to know the adherence property of the deposited films. Colony formation units (CFU) were counted manually and bacterial adhesion inhibition (BAI) was calculated. We observed a decrease in the CFU on doping Ag in the ZnO films. BAI of the film deposited at - 100 V substrate bias was found to be increased on Ag doping from 69 to 88%.

  14. Thermal evolution of Er silicate thin films grown by rf magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lo Savio, R; Miritello, M; Piro, A M; Grimaldi, M G; Priolo, F [MATIS CNR-INFM and Dipartimento di Fisica e Astronomia dell' Universita di Catania, via Santa Sofia 64, 95123 Catania (Italy); Iacona, F [CNR-IMM, Stradale Primosole 50, 95121 Catania (Italy)], E-mail: roberto.losavio@ct.infn.it

    2008-11-12

    Stoichiometric Er silicate thin films, monosilicate (Er{sub 2}SiO{sub 5}) and disilicate (Er{sub 2}Si{sub 2}O{sub 7}), have been grown on c-Si substrates by rf magnetron sputtering. The influence of annealing temperature in the range 1000-1200 deg. C in oxidizing ambient (O{sub 2}) on the structural and optical properties has been studied. In spite of the known reactivity of rare earth silicates towards silicon, Rutherford backscattering spectrometry shows that undesired chemical reactions between the film and the substrate can be strongly limited by using rapid thermal treatments. Monosilicate and disilicate films crystallize at 1100 and 1200 deg. C, respectively, as shown by x-ray diffraction analysis; the crystalline structures have been identified in both cases. Moreover, photoluminescence (PL) measurements have demonstrated that the highest PL intensity is obtained for Er{sub 2}Si{sub 2}O{sub 7} film annealed at 1200 deg. C. In fact, this treatment allows us to reduce the defect density in the film, in particular by saturating oxygen vacancies, as also confirmed by the increase of the lifetime of the PL signal.

  15. Characterization of AZO and Ag based films prepared by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Miao, Dagang [Institute of Textiles and Clothing, The Hong Kong Polytechnic University, Hong Kong (China); Jiang, Shouxiang, E-mail: kinor.j@polyu.edu.hk [Institute of Textiles and Clothing, The Hong Kong Polytechnic University, Hong Kong (China); Zhao, Hongmei [Department of Prosthodontics, The Affiliated Hospital of Qingdao University, Qingdao (China); Shang, Songmin; Chen, Zhuoming [Institute of Textiles and Clothing, The Hong Kong Polytechnic University, Hong Kong (China)

    2014-12-15

    Highlights: • Highly infrared reflective AZO and Ag based films were prepared. • Ag showed better crystallization on AZO film than on glass substrate. • Infrared reflection rate was inversely proportional to the film sheet resistance. • Film with infrared reflection of 97% in FIR region was acquired. - Abstract: Ag, AZO/Ag, Ag/AZO and AZO/Ag/AZO films were prepared on glass substrates by radio frequency (RF) magnetron sputtering technology. The prepared films were systematically investigated by X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), UV–visible spectrophotometer, a four-point probe system and Fourier Transform Infrared Spectroscopy. The results indicated that Ag inner layer starts forming a continuous film at the thickness of 10 nm and Ag layer presents superior crystallization on AZO substrate than that on glass substrate. The continuous Ag inner layer film provided the highest average visible transmittance of 85.4% (AZO/Ag/AZO). The lowest sheet resistance of 3.21 Ω/sq and the highest infrared reflection rate of 97% in FIR region can be obtained on AZO/Ag (15 nm)/AZO film. The high infrared reflection property of the AZO/Ag/AZO coating makes it a promising candidate for solar control films.

  16. Hydrogen storage properties of preferentially orientated Mg-Ni multilayer film prepared by magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    YE Suyun; OUYANG Liuzhang; ZHU Min

    2006-01-01

    Mg-Ni multi-layer thin film was deposited on (001) Si wafer by magnetron sputtering with dual-target. X-ray diffraction (XRD) and scanning electron microscopy (SEM) analysis reveal that the microstructure of the Mg-Ni multilayer thin film is composed of fine-crystalline Ni layer and crystalline [001] Mg layer. Hydrogenation process of the films were carried out by using the automatic gas reaction controller. The films undergone hydrogenation for different time were analyzed by XRD. The results show that hydrogenation properties of Mg with different preferential orientations are different. (002) diffraction peak of Mg disappears in compensating the appearing of the peaks of Mg2NiH4 and MgH2 in hydrogenation at 533 K, while the (101) peak still remains. The result reveals that the Mg film with (001) preferential orientation absorbs hydrogen at certain temperature easier than that of the Mg film with (101) orientation. This phenomenon can be explained in the view point of the energy change for the nucleation and growth of hydride in different crystal plane.

  17. Preparation and properties of erbium oxide films deposited by radio frequency magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Yanping [China Academy of Engineering Physics, Mianyang 621900, Sichuan Province (China); Zhu, Shengfa, E-mail: zhushf-306@163.com [China Academy of Engineering Physics, Mianyang 621900, Sichuan Province (China); Liu, Tianwei; Li, Fangfang; Zhang, Yanzhi [China Academy of Engineering Physics, Mianyang 621900, Sichuan Province (China); Rao, Yongchu; Zhang, Yongbin [Science and Technology on Surface Physics and Chemistry Laboratory, Mianyang 621907, Sichuan Province (China)

    2014-07-01

    The erbium oxide (Er{sub 2}O{sub 3}) film is considered as a candidate for tritium permeation barrier in recent years because of its low permeation reduced ratio and easy accessibility. Erbium oxide films with different thickness were prepared by radio frequency magnetron sputtering with varying substrate temperature and sputtering time. The film surface morphology, structure, residual stress and deuterium permeation behavior were investigated. The films were compact and smooth, while the thickness varied from 200 nm to 1000 nm. The (2 2 2) preferential orientation of Er{sub 2}O{sub 3} depressed, when the substrate temperature above 200 °C. With the substrate temperature increasing from RT to 200 °C, the compressive stress became larger, and it converted into tensile stress deposited at 400 °C. The residual stress transformed from tensile to compressive stress as the film got thicker. The permeation flux of the sample deposited with Er{sub 2}O{sub 3} film was 2 orders of magnitude less than that of uncoated one. The permeation reduced factor (PRF) of 0.5-μm Er{sub 2}O{sub 3} film deposited at room temperature is about 300 at 773 K.

  18. Magnetron sputtering deposition of [FePt/Ag]n multilayers for perpendicular recording

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    [FePt/Ag]n multilayers were deposited on glass substrates by RF magnetron sputtering and ex situ annealed at 550℃ for 30 min. The effects of inserted Ag layer thickness and the number of bilayer repetitions (n) on the structure and magnetic properties of the multilayers were investigated. It was found that the difference between in-plane and out-of-plane coercivities varied with an increase of inserted Ag layer thickness in the [FePt 2 nm/Ag x nm]10 multilayers. The ratio of out-of-plane coercivity to in-plane coercivity reached the maximum value with the Ag layer thickness of 5 nm, indicating that the Ag layer thickness plays an important role in obtaining perpendicular orientation. For the [FePt 2 nm/Ag 5 nm]n multilayers, perpendicular orientation is also influenced by n. The maximum value of the ratio of out-of-plane coercivity to in-plane coercivity appeared when n was given as 8. It was found that the [FePt 2 nm/Ag 5 nm]8 had a high perpendicular coercivity of 520 kA/m and a low in-plane one of 88 kA/m, which shows a strong perpendicular anisotropy.

  19. Growth characteristics of MoS2 coatings prepared by unbalanced bipolar DC magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    WANG Ji-hui; XIA Yang; E.Wieers; L.M.Stals; J.P.Celis

    2005-01-01

    MoS2 coatings were prepared by unbalanced bipolar DC magnetron sputtering under different argon pressures and for different deposition times, and the structure and morphology of MoS2 coatings were determined and observed respectively by X-ray diffractometry and scanning electron microscopy. The results show that at lower argon pressures of 0.15Pa and 0.40Pa, MoS2 coatings are formed with the (002) basal plane parallel to the surface, whereas the coating deposited at the argon pressure above 0.60Pa has the (002) basal plane perpendicular to the surface. Two stages can be classified for the formation of MoS2 coating. At the initial stage of coating formation, the (002) basal plane with S-Mo-S layer structure grows on the substrate whatever the argon pressure is. And then the coating under 0.40Pa argon pressure still grows with (002) laminate structure, but the coatings under 0.88Pa and 1.60Pa argon pressures turn to grow with the mixed basal and edge orientations. The morphology and structure of MoS2 coatings are highly related to their growth rate and the energy of sputtered particles.

  20. Deposition Rates of High Power Impulse Magnetron Sputtering: Physics and Economics

    Energy Technology Data Exchange (ETDEWEB)

    Anders, Andre

    2009-11-22

    Deposition by high power impulse magnetron sputtering (HIPIMS) is considered by some as the new paradigm of advanced sputtering technology, yet this is met with skepticism by others for the reported lower deposition rates, if compared to rates of more conventional sputtering of equal average power. In this contribution, the underlying physical reasons for the rate changes are discussed, including (i) ion return to the target and self-sputtering, (ii) the less-than-linear increase of the sputtering yield with increasing ion energy, (iii) yield changes due to the shift of species responsible for sputtering, (iv) changes to due to greater film density, limited sticking, and self-sputtering on the substrate, (v) noticeable power losses in the switch module, (vi) changes of the magnetic balance and particle confinement of the magnetron due to self-fields at high current, and (vii) superposition of sputtering and sublimation/evaporation for selected materials. The situation is even more complicated for reactive systems where the target surface chemistry is a function of the reactive gas partial pressure and discharge conditions. While most of these factors imply a reduction of the normalized deposition rate, increased rates have been reported for certain conditions using hot targets and less poisoned targets. Finally, some points of economics and HIPIMS benefits considered.

  1. Magnetron Sputtering a New Fabrication Method of Iron Based Biodegradable Implant Materials

    Directory of Open Access Journals (Sweden)

    Till Jurgeleit

    2015-01-01

    Full Text Available It was shown in the previous decade that pure-iron has a large potential as a biodegradable medical implant material. It is necessary to tailor the material properties according to the intended use of the device. It is of great interest to investigate not only the influence of processing on the material properties but also alternative fabrication methods. In this work for the first time magnetron sputtering in combination with UV lithography was used to fabricate free standing, patterned pure-iron thick films. For the intended use as biodegradable implant material free standing thick films were characterized in terms of microstructure, degradation performance, and mechanical properties before and after various heat treatments. The influence of microstructural changes on the degradation behavior was determined by linear polarization measurements. The mechanical properties were characterized by tensile tests. Microstructure, surface, and composition were investigated by scanning transmission electron microscopy (STEM, energy dispersive X-ray spectroscopy (EDX, and X-ray diffraction (XRD measurements. The foils exhibited a preferential orientation in 110 direction and a fine grained structure. Furthermore they showed a higher strength compared to cast iron and corrosion rates in the range of 0.1 mm/year. Their mechanical properties were tuned by grain coarsening resulting in a slight increase of the degradation rate.

  2. Application of 60 mm/φ superconducting bulk magnet to magnetron sputtering

    Science.gov (United States)

    Matsuda, T.; Kashimoto, S.; Imai, A.; Yanagi, Y.; Itoh, Y.; Ikuta, H.; Mizutani, U.; Sakurai, K.; Hazama, H.

    2003-10-01

    We constructed the planar magnetron sputtering apparatus using a c-axis oriented single-domain Sm123 bulk superconductor with 60 mm in diameter as a very powerful magnet in place of an ordinary Nd-Fe-B magnet. A high magnetic field of 4.2 T at the surface of the superconductor coupled with a high target voltage of maximum 6 kV enabled us to discharge even at pressure of 1 × 10 -3 Pa. A target-to-substrate distance of 300 mm was successfully employed under low pressures of 10 -2-10 -3 Pa to make the deposition of almost contamination-free films feasible. The simulation software (JMAG) was used to optimize the magnetic circuit configurations. The simulations could reproduce well the distribution of the magnetic field above the target measured by a three-axial Hall sensor. The discharging characteristics of Cu, Ni and Fe targets in the pressure range over 10 -1-10 -3 Pa were studied under different target voltages. The deposition rates of 0.063 nm/s (or 38 Å/min) and 0.013 nm/s (or 8 Å/min) were achieved for Cu and Fe targets with 3 mm in thickness, respectively, under the Ar pressure of 6.6 × 10 -2 Pa (or 4.9 × 10 -4 Torr).

  3. Preparation of zinc tin oxide films by reactive magnetron sputtering of Zn on liquid Sn

    Energy Technology Data Exchange (ETDEWEB)

    Pau, J.L., E-mail: joseluis.pau@uam.e [Laboratorio de Microelectronica, Dept. de Fisica Aplicada, Universidad Autonoma de Madrid, c/ Francisco Tomas y Valiente 7, 28049 Madrid (Spain); Scheffler, L.; Hernandez, M.J.; Cervera, M.; Piqueras, J. [Laboratorio de Microelectronica, Dept. de Fisica Aplicada, Universidad Autonoma de Madrid, c/ Francisco Tomas y Valiente 7, 28049 Madrid (Spain)

    2010-09-30

    Zn is sputter-deposited on melted Sn films by radio-frequency magnetron sputtering in oxidizing plasma. The samples present an absorption cut-off wavelength close to the one of ZnO, and an optical transparency higher than 50% in the visible range. Ex-situ thermal annealing improves visible transparency and produces a slight blue-shift in the optical bandgap. X-ray diffraction patterns show typical spectra due to polycrystalline ZnO with evidence of the presence of crystalline SnO, before annealing, and Zn{sub 2}SnO{sub 4}, after annealing. Rutherford Backscattering studies reveal the existence of a ZnO layer on top of an O-rich (Zn, Sn)O thin film. After optimal thermal treatment, electrical characterization exhibits carrier concentrations of 10{sup 16}-10{sup 17} cm{sup -3} and mobilities of 20-80 cm{sup 2} V{sup -1} s{sup -1} for the resulting (Zn, Sn)O n-type films.

  4. Nanocharacterization of Titanium Nitride Thin Films Obtained by Reactive Magnetron Sputtering

    Science.gov (United States)

    Merie, Violeta Valentina; Pustan, Marius Sorin; Bîrleanu, Corina; Negrea, Gavril

    2015-05-01

    Titanium nitride thin films are used in applications such as tribological layers for cutting tools, coating of some medical devices (scalpel blades, prosthesis, implants, etc.), sensors, electrodes for bioelectronics, microelectronics, diffusion barrier, bio-micro-electromechanical systems, and so on. This work is a comparative study concerning the influence of substrate temperature on some mechanical and tribological characteristics of titanium nitride thin films. The researched thin films were obtained by the reactive magnetron sputtering method. The experiments employed two kinds of substrates: a steel substrate and a silicon one. The elaboration of titanium nitride thin films was done at two temperatures. First, when the substrates were at room temperature, and second, when the substrates were previously heated at 250°C. The temperature of 250°C was kept constant during the deposition of the films. The samples were then investigated by atomic force microscopy in order to establish their mechanical and tribological properties. The nanohardness, Young's modulus, roughness, and friction force were some of the determined characteristics. The results demonstrated that the substrate which was previously heated at 250°C led to the obtaining of more adherent titanium nitride thin films than the substrate used at room temperature. The preheating of both substrates determined the decrease of thin films roughness. The friction force, nanohardness and Young's modulus of the tested samples increased when the substrates were preheated at 250°C.

  5. Magnetron Sputtered NbN Films with Nb Interlayer on Mild Steel

    Directory of Open Access Journals (Sweden)

    Kulwant Singh

    2011-01-01

    Full Text Available The aim of the study is to extend the NbN coating on MS with Nb interlayer to explore the benefits of hard nitride coatings on low-cost structural material and to compare the coating with NbN monolithic coating on SS. NbN on MS and SS was deposited by reactive d.c. magnetron sputtering at various N2/Ar flow ratios and substrate bias. Deposition rate decreased from 20 to 10 nm/min (without biasing and from 16 to 8 nm/min (−50 V biasing when N2/Ar ratio was varied from zero to 70%. Deposition rate decreased with the increase in bias voltage. Coatings showed hexagonal β Nb2N, cubic δ NbN, and hexagonal δ′ NbN as major phases with the increasing N2 flow. Surface hardness reached a maximum of 2040 HK25 at a N2/Ar of 20%. Critical loads, for cohesive and adhesive failure for coating on MS, were between 6–8 N and 9–12 N respectively; for coating on SS, the values were between 7–15 N and 12–25 N respectively. Duplex coatings were studied for hardness by Knoop microindentation, adhesion by scratch tester, and corrosion by potentiodynamic polarization technique. Hardness, adhesion, and corrosion resistance all improved when NbN coating was incorporated with Nb interlayer on MS.

  6. Hopping conduction in zirconium oxynitrides thin film deposited by reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Jie; Zhan, Guanghui; Liu, Jingquan, E-mail: jqliu@sjtu.edu.cn; Yang, Bin; Xu, Bin; Feng, Jie; Chen, Xiang; Yang, Chunsheng

    2015-10-15

    Zirconium oxynitrides thin film thermometers were demonstrated to be useful temperature sensors. However, the basic conduction mechanism of zirconium oxynitrides films has been a long-standing issue, which hinders the prediction and optimization of their ultimate performance. In this letter, zirconium oxynitrides films were grown on sapphire substrates by magnetron sputtering and their electric transport mechanism has been systemically investigated. It was found that in high temperatures region (>150 K) the electrical conductivity was dominated by thermal activation for all samples. In the low temperatures range, while Mott variable hopping conduction (VRH) was dominated the transport for films with relatively low resistance, a crossover from Mott VRH conduction to Efros–Shklovskii (ES) VRH was observed for films with relatively high resistance. This low temperature crossover from Mott to ES VRH indicates the presence of a Coulomb gap (~7 meV). These results demonstrate the competing and tunable conduction mechanism in zirconium oxynitrides thin films, which would be helpful for optimizing the performance of zirconium oxynitrides thermometer.

  7. Microstructure and Optical Characterization of Magnetron Sputtered NbN Thin Films

    Institute of Scientific and Technical Information of China (English)

    DU Xin-kang; WANG Tian-min; WANG Cong; CHEN Bu-liang; ZHOU Long

    2007-01-01

    Some fundamental studies on the preparation, structure and optical properties of NbN films were carried out. NbN thin films were deposited by DC reactive magnetron sputtering at different N2 partial pressures and different substrate temperatures ranging from -50 ℃to 600 ℃. X-ray diffraction analysis (XRD) and scanning electron microscopy (SEM) were employed to characterize their phase components, microstructures, grain sizes and surface morphology. Optical properties inclusive of refractive indexes, extinction coefficients and transmittance of the NbN films under different sputtering conditions were measured. With the increase in the N2 partial pressure,δ-NbN phase structure gets forming and the grain size and lattice constant of the cubic NbN increasing. The deposited NbN film has relatively high values of refractive index and extinction coefficient in the wavelength ranging from 240 nm to 830 nm. Substrate temperature exerts notable influences on the microstructure and optical transmittance of the NbN films. The grain sizes of the δ-NbN film remarkably increase with the rise of the substrate temperature, while the transmittance of the films with the same thickness decreases.Ultra-fine granular film with particle size of several nanometers forms when the substrate is cooled to -50 ℃, and a remarkable augmentation of transmittance could be noticed under so low a temperature.

  8. Evolution of sputtering target surface composition in reactive high power impulse magnetron sputtering

    Science.gov (United States)

    Kubart, T.; Aijaz, A.

    2017-05-01

    The interaction between pulsed plasmas and surfaces undergoing chemical changes complicates physics of reactive High Power Impulse Magnetron Sputtering (HiPIMS). In this study, we determine the dynamics of formation and removal of a compound on a titanium surface from the evolution of discharge characteristics in an argon atmosphere with nitrogen and oxygen. We show that the time response of a reactive process is dominated by surface processes. The thickness of the compound layer is several nm and its removal by sputtering requires ion fluence in the order of 1016 cm-2, much larger than the ion fluence in a single HiPIMS pulse. Formation of the nitride or oxide layer is significantly slower in HiPIMS than in dc sputtering under identical conditions. Further, we explain very high discharge currents in HiPIMS by the formation of a truly stoichiometric compound during the discharge off-time. The compound has a very high secondary electron emission coefficient and leads to a large increase in the discharge current upon target poisoning.

  9. Comparative study of niobium nitride coatings deposited by unbalanced and balanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Olaya, J.J. [Departamento de Ingenieria Mecanica y Mecatronica, Universidad Nacional de Colombia, Bogota Colombia (Colombia); Rodil, S.E. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Mexico D. F. 04510 (Mexico); Muhl, S. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Mexico D. F. 04510 (Mexico)], E-mail: muhl@servidor.unam.mx

    2008-10-01

    Niobium nitride (NbN) coatings have many interesting properties such as chemical inertness, excellent mechanical properties, high electrical conductivity, high melting point, and a superconducting transition temperature between 16 and 17 K. For this reason, these compounds have many potential thin film applications. In this work we compare the properties of NbN{sub x} films deposited using well-characterized balanced and unbalanced magnetron sputtering systems. Samples of NbN were deposited in the two systems under almost identical deposition conditions, that is, the same substrate temperature, plasma power, gas pressure, substrate to target distance and Ar/N{sub 2} ratio. Prior to the film preparation both the magnetic field geometry and the characteristics of the plasma were determined. The microstructure and composition of the deposits were analyzed by X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy. The corrosion resistance and the micro-abrasion wear resistance were measured by anodic polarization potentiodynamic studies and by ball cratering, respectively. The NbN films grown using the highly unbalanced magnetron configuration had a preferential (111) crystal orientation and a composite hardness of up to 2400 HV{sub 0.025}. While the films deposited using the balanced magnetron had a mixed crystalline orientation and a hardness of 2000 HV{sub 0.025}. The results demonstrate the strong effect of magnetic field configuration on the ion bombardment, and the resultant coating characteristics.

  10. Post Magnetron Sputter And Reactive Sputter Coating Of Contoured Glass, Acrylic And Polycarbonate Substrates

    Science.gov (United States)

    Wright, Michael P.

    1985-12-01

    A Post Magnetron Sputter concept employing a cylindrical internally cooled target (cathode) is described. The use of an internal, rotating, permanent magnetic field resulting in 360° utilisation of the target material is outlined. Computer controlled horizontal and vertical movement of the cathode assembly facilitates the coating of contoured substrates which may be glass, acrylic or polycarbonate. Deposition of different metals is easily achieved by changing the cathode or covering it with a suitable sheath material. The design of the cathode results in economic utilisation of the target material, which is particularly important when sputtering expensive metals such as gold. In addition to the deposition of metallic films, such as stainless steel or chrome, reactive sputtering may be undertaken by the introduction of a reactive gas into the vacuum chamber. In this way metal oxide, sulphide or nitride layers may be deposited according to the requirements of the layer structure. Specific optically-active oxides such as indium tin oxide are easily deposited in a uniform film and the formation of multilayer coatings for sun protective and heat rejecting applications is practicable. Indeed, a complete process may be undertaken without removing the substrate from the chamber; merely by adding or changing the reactive gas present.

  11. Thermal stability of tungsten sub-nitride thin film prepared by reactive magnetron sputtering

    Science.gov (United States)

    Zhang, X. X.; Wu, Y. Z.; Mu, B.; Qiao, L.; Li, W. X.; Li, J. J.; Wang, P.

    2017-03-01

    Tungsten sub-nitride thin films deposited on silicon samples by reactive magnetron sputtering were used as a model system to study the phase stability and microstructural evolution during thermal treatments. XRD, SEM&FIB, XPS, RBS and TDS were applied to investigate the stability of tungsten nitride films after heating up to 1473 K in vacuum. At the given experimental parameters a 920 nm thick crystalline film with a tungsten and nitrogen stoichiometry of 2:1 were achieved. The results showed that no phase and microstructure change occurred due to W2N film annealing in vacuum up to 973 K. Heating up to 1073 K led to a partial decomposition of the W2N phase and the formation of a W enrichment layer at the surface. Increasing the annealing time at the same temperature, the further decomposition of the W2N phase was negligible. The complete decomposition of W2N film happened as the temperature reached up to 1473 K.

  12. The Effect of Ion Current Density on Target Etching in Radio Frequency-Magnetron Sputtering Process

    Institute of Scientific and Technical Information of China (English)

    王庆; 王永富; 巴德纯; 岳向吉

    2012-01-01

    The effect of ion current density of argon plasma on target sputtering in magnetron sputtering process was investigated. Using home-made ion probe with computer-based data acquisition system, the ion current density as functions of discharge power, gas pressure and positions was measured. A double-hump shape was found in ion current density curve after the analysis of the effects of power and pressure. The data demonstrate that ion current density increases with the increase in gas pressure in spite of slightly at the double-hump site, sharply at wave-trough and side positions. Simultaneously, the ion current density increases upon increase in power. Es- pecially, the ion current density steeply increases at the double-hump site. The highest energy of the secondary electrons arising from Larmor precession was found at the double-hump position, which results in high ion density. The target was etched seriously at the double-hump position due to the high ion density there. The data indicates that the increase in power can lead to a high sputtering speed rate.

  13. In vitro biocompatibility of Ti–Mg alloys fabricated by direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Hieda, Junko, E-mail: hieda@imr.tohoku.ac.jp; Niinomi, Mitsuo; Nakai, Masaaki; Cho, Ken

    2015-09-01

    Ti–xMg (x = 17, 33, and 55 mass%) alloy films, which cannot be prepared by conventional melting processes owing to the absence of a solid-solution phase in the phase diagram, were prepared by direct current magnetron sputtering in order to investigate their biocompatibility. Ti and Mg films were also prepared by the same process for comparison. The crystal structures were examined by X-ray diffraction (XRD) analysis and the surfaces were analyzed by X-ray photoelectron spectroscopy. The Ti, Ti–xMg alloy, and Mg films were immersed in a 0.9% NaCl solution at 310 K for 7 d to evaluate the dissolution amounts of Ti and Mg. In addition, to evaluate the formation ability of calcium phosphate in vitro, the Ti, Ti–xMg alloy, and Mg films were immersed in Hanks' solution at 310 K for 30 d. Ti and Mg form solid-solution alloys because the peaks attributed to pure Ti and Mg do not appear in the XRD patterns of any of the Ti–xMg alloy films. The surfaces of the Ti–17Mg alloy and Ti–33Mg alloy films contain Ti oxides and MgO, whereas MgO is the main component of the surface oxide of the Ti–55Mg alloy and Mg films. The dissolution amounts of Ti from all films are below or near the detection limit of inductively coupled plasma-optical emission spectroscopy. On the other hand, the Ti–17Mg alloy, Ti–33Mg alloy, Ti–55Mg alloy, and Mg films exhibit Mg dissolution amounts of approximately 2.5, 1.4, 21, and 41 μg/cm{sup 2}, respectively. The diffraction peaks attributed to calcium phosphate are present in the XRD patterns of the Ti–33Mg alloy, Ti–55Mg alloy, and Mg films after the immersion in Hanks' solution. Spherical calcium phosphate particles precipitate on the surface of the Ti–33Mg film. However, many cracks are observed in the Ti–55Mg film, and delamination of the film occurs after the immersion in Hanks' solution. The Mg film is dissolved in Hanks' solution and calcium phosphate particles precipitate on the glass substrate

  14. Low friction coefficient coatings Ni-Cr by magnetron sputtering, DC

    Directory of Open Access Journals (Sweden)

    Morales-Hernández, Jorge

    2015-09-01

    Full Text Available Magnetron Sputter Deposition technique with DC was used for the deposition of Ni-Cr coatings on AISI 316 SS like substrate. The cathode with a nominal composition Ni-22 at% Cr was prepared by Mechanical Alloying (MA technique, with a maximum milling time of 16 hours and, with a high energy SPEX 8000 mill. The coatings were made under Argon atmosphere at room temperature with a power of 100 W at different times of growth. Chemical composition, microstructure, topography, nanohardness and wear of the coatings were evaluated using the techniques of microanalysis by energy dispersive X-ray analyzer (EDAX, X-Ray Diffraction (XRD, Atomic Force Microscopy (AFM, Nano-indentation and pin-on-Disk, respectively. After milling, was not detected contamination in the mixtures. XRD analysis revealed that the microstructure of the Ni-Cr alloy was maintained in the coatings with respect to MA powders, with some degree of recrystallization. Nanohardness values were in the order of 8.8 GPa with a Young’s modulus of 195 GPa. The adhesion of the films was evaluated according to their resistance to fracture when these were indented at different loads using Vickers microhardness. The wear test results showed a decrease in the friction coefficient with respect to the increase of thickness’ films, getting a minimum value of 0.08 with a thickness of 1 μm and which correspond with the maximum growing time.La técnica de Deposición por Chisporroteo Magnético (Magnetron Sputtering con el proceso DC, fue usado para la deposición de los recubrimientos de Ni-Cr sobre acero inoxidable AISI 316 como sustrato. El cátodo con una composición nominal Ni-22 at% Cr fue preparado por la técnica de Aleado Mecánico (AM, con un tiempo máximo de molienda de 16 horas y con un molino de alta energía tipo SPEX 8000. Las películas se realizaron bajo una atmósfera de argón a temperatura ambiente con una potencia de 100 W a diferentes tiempos de crecimiento. La composición qu

  15. Thermochromic VO2 thin films deposited by magnetron sputtering for smart window applications

    Science.gov (United States)

    Fortier, Jean-Philippe

    "Smart" windows are a perfect innovative example of technology that reduces our energy dependence and our impact on the environment while saving on the economical point of view. With the use of vanadium dioxide (VO2), a thermochromic compound, and this, as a thin coating, it would in fact be possible to control the sun's transmission of infrared light (heat) as a function of the surrounding environment temperature. In other words, its optical behavior would allow a more effective management of heat exchanges between a living venue and the outdoor environment. However, this type of window is still in a developmental stage. First, the oxide's deposition is not simple in nature. Based on a conventional deposition technique called magnetron sputtering mainly used in the fenestration industry, several factors such as the oxygen concentration and the substrate temperature during deposition can affect the coating's thermochromic behavior, and this, by changing its composition and crystallinity. Other control parameters such as the deposition rate, the pressure in the sputtering chamber and the choice of substrate may also modify the film microstructure, thereby varying its optical and electrical properties. In addition, several issues still persist as to its commercial application. For starters, the material's structural transition, related to the change of its optical properties, only occurs around 68°C. In addition, its low transparency and natural greenish colour are not visually appealing. Then, to this day, the deposition temperature required to crystallize and form the thermochromic oxide remains an obstacle for a possible large-scale application. Ultimately, although the material's change in temperature has been shown to be advantageous in situations of varying climate, the existing corrective solutions to these issues generate a deterioration of the thermochromic behavior. With no practical expertise on the material, this project was undertaken with certain

  16. Reactive magnetron sputtering deposition of bismuth tungstate onto titania nanoparticles for enhancing visible light photocatalytic activity

    Science.gov (United States)

    Ratova, Marina; Kelly, Peter J.; West, Glen T.; Tosheva, Lubomira; Edge, Michele

    2017-01-01

    Titanium dioxide - bismuth tungstate composite materials were prepared by pulsed DC reactive magnetron sputtering of bismuth and tungsten metallic targets in argon/oxygen atmosphere onto anatase and rutile titania nanoparticles. The use of an oscillating bowl placed beneath the two magnetrons arranged in a co-planar closed field configuration enabled the deposition of bismuth tungstate onto loose powders, rather than a solid substrate. The atomic ratio of the bismuth/tungsten coatings was controlled by varying the power applied to each target. The effect of the bismuth tungstate coatings on the phase, optical and photocatalytic properties of titania was investigated by X-ray diffraction, energy-dispersive X-ray spectroscopy (EDX), Brunauer-Emmett-Teller (BET) surface area measurements, transmission electron microscopy (TEM), UV-vis diffuse reflectance spectroscopy and an acetone degradation test. The latter involved measurements of the rate of CO2 evolution under visible light irradiation of the photocatalysts, which indicated that the deposition of bismuth tungstate resulted in a significant enhancement of visible light activity, for both anatase and rutile titania particles. The best results were achieved for coatings with a bismuth to tungsten atomic ratio of 2:1. In addition, the mechanism by which the photocatalytic activity of the TiO2 nanoparticles was enhanced by compounding it with bismuth tungstate was studied by microwave cavity perturbation. The results of these tests confirmed that such enhancement of the photocatalytic properties is due to more efficient photogenerated charge carrier separation, as well as to the contribution of the intrinsic photocatalytic properties of Bi2WO6.

  17. Chemical and Morphological Characterization of Magnetron Sputtered at Different Bias Voltages Cr-Al-C Coatings

    Directory of Open Access Journals (Sweden)

    Aleksei Obrosov

    2017-02-01

    Full Text Available MAX phases (M = transition metal, A = A-group element, and X = C/N are of special interest because they possess a unique combination of the advantages of both metals and ceramics. Most attention is attracted to the ternary carbide Cr2AlC because of its excellent high-temperature oxidation, as well as hot corrosion resistance. Despite lots of publications, up to now the influence of bias voltage on the chemical bonding structure, surface morphology, and mechanical properties of the film is still not well understood. In the current study, Cr-Al-C films were deposited on silicon wafers (100 and Inconel 718 super alloy by dc magnetron sputtering with different substrate bias voltages and investigated using Scanning Electron Microscopy (SEM, X-ray Photoelectron Spectroscopy (XPS, X-ray Diffraction (XRD, Atomic Force Microscopy (AFM, and nanoindentation. Transmission Electron Microscopy (TEM was used to analyze the correlation between the growth of the films and the coating microstructure. The XPS results confirm the presence of Cr2AlC MAX phase due to a negative shift of 0.6–0.9 eV of the Al2p to pure aluminum carbide peak. The XRD results reveal the presence of Cr2AlC MAX Phase and carbide phases, as well as intermetallic AlCr2. The film thickness decreases from 8.95 to 6.98 µm with increasing bias voltage. The coatings deposited at 90 V exhibit the lowest roughness (33 nm and granular size (76 nm combined with the highest hardness (15.9 GPa. The ratio of Al carbide to carbide-like carbon state changes from 0.12 to 0.22 and correlates with the mechanical properties of the coatings. TEM confirms the columnar structure, with a nanocrystalline substructure, of the films.

  18. A Semi-Empirical Model for Tilted-Gun Planar Magnetron Sputtering Accounting for Chimney Shadowing

    Science.gov (United States)

    Bunn, J. K.; Metting, C. J.; Hattrick-Simpers, J.

    2015-01-01

    Integrated computational materials engineering (ICME) approaches to composition and thickness profiles of sputtered thin-film samples are the key to expediting materials exploration for these materials. Here, an ICME-based semi-empirical approach to modeling the thickness of thin-film samples deposited via magnetron sputtering is developed. Using Yamamura's dimensionless differential angular sputtering yield and a measured deposition rate at a point in space for a single experimental condition, the model predicts the deposition profile from planar DC sputtering sources. The model includes corrections for off-center, tilted gun geometries as well as shadowing effects from gun chimneys used in most state-of-the-art sputtering systems. The modeling algorithm was validated by comparing its results with experimental deposition rates obtained from a sputtering system utilizing sources with a multi-piece chimney assembly that consists of a lower ground shield and a removable gas chimney. Simulations were performed for gun-tilts ranging from 0° to 31.3° from the vertical with and without the gas chimney installed. The results for the predicted and experimental angular dependence of the sputtering deposition rate were found to have an average magnitude of relative error of for a 0°-31.3° gun-tilt range without the gas chimney, and for a 17.7°-31.3° gun-tilt range with the gas chimney. The continuum nature of the model renders this approach reverse-optimizable, providing a rapid tool for assisting in the understanding of the synthesis-composition-property space of novel materials.

  19. Investigation of optical and microstructural properties of RF magnetron sputtered PTFE films for hydrophobic applications

    Energy Technology Data Exchange (ETDEWEB)

    Tripathi, S., E-mail: shilpatr3@gmail.com [Optics and Thin Film Laboratory, Bhabha Atomic Research Centre, Visakhapatnam (India); Haque, S. Maidul; Rao, K. Divakar; De, Rajnarayan [Optics and Thin Film Laboratory, Bhabha Atomic Research Centre, Visakhapatnam (India); Shripathi, T.; Deshpande, U.; Ganesan, V. [UGC-DAE Consortium for Scientific Research, Indore (India); Sahoo, N.K. [Atomic and Molecular Physics Division, Bhabha Atomic Research Centre, Mumbai (India)

    2016-11-01

    Highlights: • Polytetrafluoroethylene films were made by RF sputtering by varying deposition time. • With increasing deposition time, thickness shows unusual trend due to backsputtering. • Major contribution of CF{sub 2} and CF{sub 3} bonds in the samples is seen by ATR-FTIR. • Deposition time influences film thickness but all samples remain hydrophobic. • XPS spectra show strong CF{sub x} bonds at the surface. - Abstract: The deposition time dependence of optical, structural and morphological properties of thin as well as ultrathin Polytetrafluoroethylene (PTFE) sputtered films have been explored in the present communication. The films were prepared by RF magnetron sputtering under high vacuum condition, as a function of deposition time. The ellipsometry as well as X-ray reflectivity data show a drastic reduction in film thickness as the deposition time increases from 5 s to 10 s, possibly as a consequence of back sputtering. With subsequent deposition, back sputtering component decreases and hence, thickness increases with increase in deposition time. Atomic force microscopy (AFM) images show a slight change in growth morphology although roughness is independent of deposition time. Attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR) measurements showed the presence of C−C and CF{sub x} (x = 1–3) bonds in all the PTFE films. Supporting this, corresponding X-ray photoelectron spectroscopy (XPS) curves fitted for C-1s and F-1s peaks revealed a major contribution from CF{sub 2} bonds along with significant contribution from CF{sub 3} bonds leading to an F/C ratio of ∼1.5 giving hydrophobic nature of all the films.

  20. Effect of reactive magnetron sputtering parameters on structural and electrical properties of hafnium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Szymańska, Magdalena, E-mail: magdalena_szymanska@its.waw.pl [Warsaw University of Technology, Institute of Microelectronics and Optoelectronics, Koszykowa 75, 00-662 Warsaw (Poland); Motor Transport Institute, Jagiellońska 80, 03-301 Warsaw (Poland); Gierałtowska, Sylwia; Wachnicki, Łukasz [Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw (Poland); Grobelny, Marcin; Makowska, Katarzyna [Motor Transport Institute, Jagiellońska 80, 03-301 Warsaw (Poland); Mroczyński, Robert [Warsaw University of Technology, Institute of Microelectronics and Optoelectronics, Koszykowa 75, 00-662 Warsaw (Poland)

    2014-05-01

    Highlights: • Structural and electrical characterization of HfO{sub x} and HfO{sub x}N{sub y} thin films. • Analysis of the influence of deposition process parameters on properties of films. • Investigation of the post-deposition annealing on HfO{sub x} and HfO{sub x}N{sub y} properties. • Experiment has been designed with use of Taguchi's orthogonal arrays. • The most favorable annealing temperature of HfO{sub x} and HfO{sub x}N{sub y} is 300 °C. - Abstract: The purpose of this work was to compare the structural and electrical properties of magnetron sputtered hafnium oxide (HfO{sub x}) and hafnium oxynitride (HfO{sub x}N{sub y}) thin films. A careful analysis of the influence of deposition process parameters, among them: pressure in the reactor chamber, Ar and O{sub 2} flow rate, power applied to the reactor chamber and deposition time, on electro-physical properties of HfO{sub x} and HfO{sub x}N{sub y} layers has been performed. In the course of this work we performed number of experiments by means of Taguchi's orthogonal arrays approach. Such a method allowed for the determination of dielectric layers properties depending on process parameters with relatively low amount of experiments. Moreover, the effects of post-deposition annealing on electrical characteristics of metal–insulator–semiconductor (MIS) structures with HfO{sub x} or HfO{sub x}N{sub y} gate dielectric and its structural properties have also been reported. Investigated hafnia thin films were characterized by means of spectroscopic ellipsometry (SE), electrical characteristics measurements, atomic force microscopy (AFM), X-ray diffraction spectroscopy (XRD) and Rutherford backscattering spectrometry (RBS)

  1. TiN films grown by reactive magnetron sputtering with enhanced ionization at low discharge pressures

    Energy Technology Data Exchange (ETDEWEB)

    Kadlec, S.; Musil, J. (Ceskoslovenska Akademie Ved, Prague (Czechoslovakia). Fyzikalni Ustav); Valvoda, V. (Karlova Univ., Prague (Czechoslovakia). Fakulta Matematicko-Fyzikalni); Muenz, W.-D.; Petersein, H.; Schroeder, J. (Leybold A.G., Hanau (Germany, F.R.))

    1990-01-01

    TiN films were produced by reactive magnetron sputtering at a discharge pressure of 0.09 Pa on substrates placed 200 mm away from the magnetron target, using a sputtering system with enhanced ionization by means of multipolar magnetic confinement. The effects on film properties are reported for two ranges of values: an external substrate bias U{sub s} of from -35 to -150 V, and a floating potential U{sub fl} of from -24 to -45 V. All films show a dense microstructure, a smooth surface and shiny golden color. The microhardness HV is between 2000 and 2600 kg mm{sup -1}, a high critical load of up to L{sub c} = 58 N in scratch tests and the coefficient of friction against a cemented carbide counter ball is between 0.12 and 0.22. The color co-ordinated L{sup *}, A{sup *} and B{sup *} depend on the bias voltage. The brightness L{sup *} reaches 78 CIELAB units. The properties of films prepared at U{sub s} between -60 and -150 V compare well to those of ion-plated films. The films prepared at U{sub s} < 60 V, or at any of the values for U{sub fl}, exhibit comparatively low compressive microstresses down to 2.2 GPa and low microstrain down to 3.5 x 10{sup -3}. These films show single (111), (200) or (220) textures, or a mixed (200) + (111) texture, depending on the U value at which they were prepared. (author).

  2. Bioactivity response of Ta1-xOx coatings deposited by reactive DC magnetron sputtering.

    Science.gov (United States)

    Almeida Alves, C F; Cavaleiro, A; Carvalho, S

    2016-01-01

    The use of dental implants is sometimes accompanied by failure due to periimplantitis disease and subsequently poor esthetics when soft-hard tissue margin recedes. As a consequence, further research is needed for developing new bioactive surfaces able to enhance the osseous growth. Tantalum (Ta) is a promising material for dental implants since, comparing with titanium (Ti), it is bioactive and has an interesting chemistry which promotes the osseointegration. Another promising approach for implantology is the development of implants with oxidized surfaces since bone progenitor cells interact with the oxide layer forming a diffusion zone due to its ability to bind with calcium which promotes a stronger bond. In the present report Ta-based coatings were deposited by reactive DC magnetron sputtering onto Ti CP substrates in an Ar+O2 atmosphere. In order to assess the osteoconductive response of the studied materials, contact angle and in vitro tests of the samples immersed in Simulated Body Fluid (SBF) were performed. Structural results showed that oxide phases where achieved with larger amounts of oxygen (70 at.% O). More compact and smooth coatings were deposited by increasing the oxygen content. The as-deposited Ta coating presented the most hydrophobic character (100°); with increasing oxygen amount contact angles progressively diminished, down to the lowest measured value, 63°. The higher wettability is also accompanied by an increase on the surface energy. Bioactivity tests demonstrated that highest O-content coating, in good agreement with wettability and surface energy values, showed an increased affinity for apatite adhesion, with higher Ca/P ratio formation, when compared to the bare Ti substrates.

  3. A Magnetron Sputter Deposition System for the Development of Multilayer X-Ray Optics

    Science.gov (United States)

    Broadway, David; Ramsey, Brian; Gubarev, Mikhail

    2014-01-01

    The proposal objective is to establish the capability to deposit multilayer structures for x-ray, neutron, and EUV optic applications through the development of a magnetron sputtering deposition system. A specific goal of this endeavor is to combine multilayer deposition technology with the replication process in order to enhance the MSFC's position as a world leader in the design of innovative X-ray instrumentation through the development of full shell replicated multilayer optics. The development of multilayer structures is absolutely necessary in order to advance the field of X-ray astronomy by pushing the limit for observing the universe to ever increasing photon energies (i. e. up to 200 keV or higher); well beyond Chandra (approx. 10 keV) and NuStar's (approx. 75 keV) capability. The addition of multilayer technology would significantly enhance the X-ray optics capability at MSFC and allow NASA to maintain its world leadership position in the development, fabrication and design of innovative X-ray instrumentation which would be the first of its kind by combining multilayer technology with the mirror replication process. This marriage of these technologies would allow astronomers to see the universe in a new light by pushing to higher energies that are out of reach with today's instruments.To this aim, a magnetron vacum sputter deposition system for the deposition of novel multilayer thin film X-ray optics is proposed. A significant secondary use of the vacuum deposition system includes the capability to fabricate multilayers for applications in the field of EUV optics for solar physics, neutron optics, and X-ray optics for a broad range of applications including medical imaging.

  4. High-induction nanocrystalline soft magnetic Fe{sub X}Ti{sub Y}B{sub Z} films prepared by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Sheftel, Elena N.; Tedzhetov, Valentin A.; Harin, Eugene V.; Usmanova, Galina Sh. [A.A. Baikov Institute of Metallurgy and Material Science, Russian Academy of Sciences, Moscow (Russian Federation); Kiryukhantsev-Korneev, Filipp V. [National University of Science and Technology ' ' MISIS' ' , Moscow (Russian Federation)

    2016-12-15

    To design films with the Fe/TiB{sub 2} nanocomposite structure, which are characterized by high saturation induction B{sub s}, the phase and structural states and static magnetic properties of Fe-TiB{sub 2} films prepared by magnetron sputtering and subjected to subsequent annealing have been studied. According to X-ray diffraction data, either amorphous or nanocrystalline single-phase structure (an α-Fe(Ti,B) supersaturated solid solution with a bcc crystal lattice) is formed in the as-sputtered films. Depending on the film composition, the grain size of the α-Fe(Ti,B) phase varies from 45.6 to 6.5 nm; grains are characterized by high microstrain (0.21-4.96%). The annealing at 200-500 C leads to a decrease in the lattice parameter of the α-Fe(Ti,B) phase, i.e. to its depletion of titanium and boron and to the formation of two-phase α-Fe + Fe{sub 3}B structure after annealing at 500 C. The annealing at 200-500 C almost does not affect the grain size and microstrain of the bcc α-Fe-based phase. The amorphous state of the films is stable up to 500 C. All studied films are ferromagnets; the saturation induction B{sub s}(0.95-2.13 T) and coercive field H{sub c} (0.4-5 kA/m) of the films were determined. Correlations between the B{sub s} and H{sub c} magnitudes and the chemical composition of the films, their phase and structural states and magnetic structure are discussed. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Combined optical emission and resonant absorption diagnostics of an Ar-O{sub 2}-Ce-reactive magnetron sputtering discharge

    Energy Technology Data Exchange (ETDEWEB)

    El Mel, A.A. [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Institut des Matériaux Jean Rouxel, Université de Nantes, CNRS, 2 rue de la Houssinière B.P. 32229, Nantes Cedex 3 44322 (France); Ershov, S. [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Britun, N., E-mail: nikolay.britun@umons.ac.be [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Ricard, A. [Université de Toulouse, UPS, INPT, LAPLACE (Laboratoire Plasma et Conversion d' Energie), 118 route de Narbonne, Toulouse Cedex 9 F-31062 (France); Konstantinidis, S. [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Snyders, R. [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Materia Nova Research Center, Parc Initialis, Avenue Copernic 1, Mons B-7000 (Belgium)

    2015-01-01

    We report the results on combined optical characterization of Ar-O{sub 2}-Ce magnetron sputtering discharges by optical emission and resonant absorption spectroscopy. In this study, a DC magnetron sputtering system equipped with a movable planar magnetron source with a Ce target is used. The intensities of Ar, O, and Ce emission lines, as well as the absolute densities of Ar metastable and Ce ground state atoms are analyzed as a function of the distance from the magnetron target, applied DC power, O{sub 2} content, etc. The absolute number density of the Ar{sup m} is found to decrease exponentially as a function of the target-to-substrate distance. The rate of this decrease is dependent on the sputtering regime, which should be due to the different collisional quenching rates of Ar{sup m} by O{sub 2} molecules at different oxygen contents. Quantitatively, the absolute number density of Ar{sup m} is found to be equal to ≈ 3 × 10{sup 8} cm{sup −3} in the metallic, and ≈ 5 × 10{sup 7} cm{sup −3} in the oxidized regime of sputtering, whereas Ce ground state densities at the similar conditions are found to be few times lower. The absolute densities of species are consistent with the corresponding deposition rates, which decrease sharply during the transition from metallic to poisoned sputtering regime. - Highlights: • Optical emission and resonant absorption spectroscopy are employed to study Ar-O{sub 2}-Ce magnetron sputtering discharges. • The density of argon metastables is found to decrease exponentially when increasing the target-to-substrate distance. • The collision-quenching rates of Ar{sup m} by O{sub 2} molecules at different oxygen contents is demonstrated. • The deposition rates of cerium and cerium oxide thin films decrease sharply during the transition from the metallic to the poisoned sputtering regime.

  6. Preparation of Nano-crystalline Tungsten Carbide Thin Film by Magnetron Sputtering and Their Electrocatalytic Property for PNP Reduction

    Institute of Scientific and Technical Information of China (English)

    Hua Jun ZHENG; Jian Guo HUANG; Chun An MA

    2005-01-01

    Nano-crystalline tungsten carbide thin films were deposited on Ni substrates by magnetron sputtering using WC as target material. The crystal structure and morphology of the thin films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM).Electrochemical investigations showed that the electrode of the thin film exhibited higher electrocatalytic activity in the reaction of p-nitrophenol (PNP) reduction. FT-IR analysis indicated that p-aminophenol (PAP) was synthesized after two step reduction of PNP on nano-crystalline tungsten carbide thin film electrode.

  7. Characterization of ZnO:SnO2 (50:50) thin film deposited by RF magnetron sputtering technique

    Science.gov (United States)

    Cynthia, S. R.; Sivakumar, R.; Sanjeeviraja, C.; Ponmudi, S.

    2016-05-01

    Zinc oxide (ZnO) and tin oxide (SnO2) thin films have attracted significant interest recently for use in optoelectronic application such as solar cells, flat panel displays, photonic devices, laser diodes and gas sensors because of their desirable electrical and optical properties and wide band gap. In the present study, thin films of ZnO:SnO2 (50:50) were deposited on pre-cleaned microscopic glass substrate by RF magnetron sputtering technique. The substrate temperature and RF power induced changes in structural, surface morphological, compositional and optical properties of the films have been studied.

  8. Compositional study of vacuum annealed Al doped ZnO thin films obtained by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Shantheyanda, B. P.; Todi, V. O.; Sundaram, K. B.; Vijayakumar, A.; Oladeji, I. [Department of Electrical Engineering and Computer Science, University of Central Florida, Orlando, Florida 32816 (United States); Planar Energy Inc., 653 W. Michigan St., Orlando, Florida 32805 (United States)

    2011-09-15

    Aluminum doped zinc oxide (AZO) thin films were obtained by RF magnetron sputtering. The effects of deposition parameters such as power, gas flow conditions, and substrate heating have been studied. Deposited and annealed films were characterized for composition as well as microstructure using x ray photoelectron spectroscopy and x ray diffraction. Films produced were polycrystalline in nature. Surface imaging and roughness studies were carried out using SEM and AFM, respectively. Columnar grain growth was predominantly observed. Optical and electrical properties were evaluated for transparent conducting oxide applications. Processing conditions were optimized to obtain highly transparent AZO films with a low resistivity value of 6.67 x 10{sup -4}{Omega} cm.

  9. Preparation and characteristics of indium tin oxide (ITO) thin films at low temperature by r.f. magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    REN Bingyan; LIU Xiaoping; WANG Minhua; XU Ying

    2006-01-01

    Low resistivity and highly transparent ITO conducting films for solar cell applications were fabricated at low temperature by r.f. Magnetron sputtering. ITO films were deposited on glass and silicon substrate. Electrical, optical, structural and morphological properties of the ITO films were investigated in terms of the preparation conditions. The annealing treatment has improved the properties of the ITO films at different degree. The maximum transmittance of the obtained ITO films in the visible range is over 92%, and the low resistivity for the ITO films are about 3.85×10-4Ω·cm at 80℃, 80 W after annealing.

  10. Influence of nitrogen flow rates on materials properties of CrN films grown by reactive magnetron sputtering

    Indian Academy of Sciences (India)

    B Subramanian; K Prabakaran; M Jayachandran

    2012-08-01

    Chromium nitride (CrN) hard thin films were deposited on different substrates by reactive direct current (d.c.) magnetron sputtering with different nitrogen flow rates. The X-ray diffraction patterns showed mixed Cr2N and CrN phases. The variations in structural parameters are discussed. The grain size increased with increasing nitrogen flow rates. Scanning electron microscopy image showed columnar and dense microstructure with varying nitrogen flow rates. An elemental analysis of the samples was realized by means of energy dispersive spectroscopy. The electrical studies indicated the semiconducting behaviour of the films at the nitrogen flow rate of 15 sccm.

  11. Optical properties of ZnO thin films on SiO2 substrates deposited by radio frequency magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    Deping Xiong(熊德平); Xiqing Zhang(张希清); Jing Wang(王晶); Peng Lin(林鹏); Shihua Huang(黄世华)

    2004-01-01

    The optical properties of both the annealed and as-deposited ZnO thin films by radio frequency (RF)magnetron sputtering on SiO2 substrates were studied. In the annealed films, two pronounced well defined exciton absorption peaks for the A and B excitons were obtained in the absorption spectra, a strong free exciton emission without deep-level emissions was observed in the photoluminescence (PL) spectra at room temperature. It was found that annealing the films in oxygen dramatically improved the optical properties and the quality of the films.

  12. Ion beam analysis, corrosion resistance and nanomechanical properties of TiAlCN/CNx multilayer grown by reactive magnetron sputtering

    OpenAIRE

    Alemon, B.; Flores, M.; Canto, C.; E. Andrade; O.G. de Lucio; M.F. Rocha; Broitman, Esteban

    2014-01-01

    A novel TiAlCN/CNx, multilayer coating, consisting of nine TiAlCN/CNx periods with a top layer 0.5 mu m of CNx, was designed to enhance the corrosion resistance of CoCrMo biomedical alloy. The multilayers were deposited by dc and RF reactive magnetron sputtering from Ti0.5Al0.5 and C targets respectively in a N-2/Ar plasma. The corrosion resistance and mechanical properties of the multilayer coatings were analyzed and compared to CoCrMo bulk alloy. Ion beam analysis (IBA) and X-ray diffractio...

  13. Particle beam experiments for the investigation of plasma-surface interactions: application to magnetron sputtering and polymer treatment

    CERN Document Server

    Corbella, Carles; Kreiter, Oliver; Arcos, Teresa de los; Benedikt, Jan; von Keudell, Achim

    2013-01-01

    A beam experiment is presented to study heterogeneous reactions relevant to plasma-surface interactions. Atom and ion beams are focused onto the sample to expose it to quantified beams of oxygen, nitrogen, hydrogen, noble gas ions and metal vapor. The heterogeneous surface processes are monitored in-situ and in real time by means of a quartz crystal microbalance (QCM) and Fourier transform infrared spectroscopy (FTIR). Two examples illustrate the capabilities of the particle beam setup: oxidation and nitriding of aluminum as a model of target poisoning during reactive magnetron sputtering, and plasma treatment of polymers (PET, PP).

  14. Growth and characterization of a-axis oriented Cr-doped AlN films by DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Panda, Padmalochan; Ramaseshan, R., E-mail: seshan@igcar.gov.in; Dash, S. [Materials Science Group, IGCAR, Kalpakkam, 603102 (India); Krishna, Nanda Gopala [Corrosion Science and Technology Group, IGCAR, Kalpakkam, 603102 (India)

    2016-05-23

    Wurtzite type Cr-doped AlN thin films were grown on Si (100) substrates using DC reactive magnetron sputtering with a function of N{sub 2} concentration (15 to 25%). Evolution of crystal structure of these films was studied by GIXRD where a-axis preferred orientation was observed. The electronic binding energy and concentration of Cr in these films were estimated by X-ray photoemission spectroscopy (XPS). We have observed indentation hardness (H{sub IT}) of around 28.2 GPa for a nitrogen concentration of 25%.

  15. In vitro biocompatibility of Ti-Mg alloys fabricated by direct current magnetron sputtering.

    Science.gov (United States)

    Hieda, Junko; Niinomi, Mitsuo; Nakai, Masaaki; Cho, Ken

    2015-09-01

    Ti-xMg (x=17, 33, and 55 mass%) alloy films, which cannot be prepared by conventional melting processes owing to the absence of a solid-solution phase in the phase diagram, were prepared by direct current magnetron sputtering in order to investigate their biocompatibility. Ti and Mg films were also prepared by the same process for comparison. The crystal structures were examined by X-ray diffraction (XRD) analysis and the surfaces were analyzed by X-ray photoelectron spectroscopy. The Ti, Ti-xMg alloy, and Mg films were immersed in a 0.9% NaCl solution at 310 K for 7d to evaluate the dissolution amounts of Ti and Mg. In addition, to evaluate the formation ability of calcium phosphate in vitro, the Ti, Ti-xMg alloy, and Mg films were immersed in Hanks' solution at 310 K for 30 d. Ti and Mg form solid-solution alloys because the peaks attributed to pure Ti and Mg do not appear in the XRD patterns of any of the Ti-xMg alloy films. The surfaces of the Ti-17 Mg alloy and Ti-33 Mg alloy films contain Ti oxides and MgO, whereas MgO is the main component of the surface oxide of the Ti-55 Mg alloy and Mg films. The dissolution amounts of Ti from all films are below or near the detection limit of inductively coupled plasma-optical emission spectroscopy. On the other hand, the Ti-17 Mg alloy, Ti-33 Mg alloy, Ti-55 Mg alloy, and Mg films exhibit Mg dissolution amounts of approximately 2.5, 1.4, 21, and 41 μg/cm(2), respectively. The diffraction peaks attributed to calcium phosphate are present in the XRD patterns of the Ti-33 Mg alloy, Ti-55 Mg alloy, and Mg films after the immersion in Hanks' solution. Spherical calcium phosphate particles precipitate on the surface of the Ti-33 Mg film. However, many cracks are observed in the Ti-55 Mg film, and delamination of the film occurs after the immersion in Hanks' solution. The Mg film is dissolved in Hanks' solution and calcium phosphate particles precipitate on the glass substrate. Consequently, it is revealed that the Ti-33 Mg

  16. Cu-In-O composite thin films deposited by reactive DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ye Fan [School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technologies, Shenzhen University, Shenzhen 518060 (China); Cai Xingmin, E-mail: caixm@szu.edu.c [School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technologies, Shenzhen University, Shenzhen 518060 (China); Dai Fuping [Department of Applied Physics, Northwestern Polytechnic University, Xian 710072 (China); Jing Shouyong [Institute of Optoelectronics, Shenzhen University, Shenzhen 518060 (China); Zhang Dongping; Fan Ping; Liu Lijun [School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technologies, Shenzhen University, Shenzhen 518060 (China)

    2011-02-01

    Cu-In-O composite thin films were deposited by reactive DC magnetron sputtering at room temperature. The samples were characterized by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/vis spectrophotometer, four-probe measurement and Seebeck effect measurement, etc. The samples contain Cu, In and O. The ratios of Cu to In and O to In increase with increase in O{sub 2} flow rates. The ratio of Cu to In is over 1 and this suggests that Cu is in excess. The obtained Cu-In-O thin films are very possibly made of rhombohedral In{sub 2}O{sub 3} and monoclinic CuO. Transmittance of the films decreases with increase in O{sub 2} flow rate. The decrease in transmittance results from increase in Cu content in the films. The optical band gap of all the samples is estimated to be 4.1-4.4 eV, which is larger than those of In{sub 2}O{sub 3} and CuO. The sheet resistance of the films decreases with increase in O{sub 2} flow rate. Conductivity of the films is a little low, due to the addition of Cu and the poor crystalline quality of the film. The conduction behavior of the films is similar to that of In{sub 2}O{sub 3} and the conduction mechanism of Cu-In-O thin films is through O vacancy. -- Research Highlights: {yields}Cu-In-O composite thin films were fabricated by DC sputtering at room temperature. {yields}The films are made of rhombohedral In{sub 2}O{sub 3} and monoclinic CuO. {yields}The transmittance depends on the Cu content in the film. {yields}The direct optical band gap is around 4.1-4.4eV. {yields}The conducting mechanism is due to oxygen vacancy.

  17. The microstructure and properties of unbalanced magnetron sputtered CrN{sub x} coatings

    Energy Technology Data Exchange (ETDEWEB)

    Hurkmans, Antonius Petrus Arnoldus

    2002-07-01

    experiments in a rather non-conventional magnetron sputtering parameter window: a combination of a high substrate bias voltage (> -200 V) and a high partial pressure of nitrogen (a multitude of the argon partial pressure). This phase shows a strong {l_brace}100{r_brace} preferred crystallographic orientation and shows an excellent behaviour against corrosion and wear. (author)

  18. Integration of in situ RHEED with magnetron sputter deposition for atomic layer controlled growth

    Science.gov (United States)

    Podkaminer, Jacob P.

    Epitaxial thin films continue to be one of the most promising topics within electronic materials research. Sputter deposition is one process by which these films can be formed and is a widely used growth technique for a large range of technologically important material systems. Epitaxial films of carbides, nitrides, metals, oxides and more can all be formed during the sputter process which offers the ability to deposit smooth and uniform films from the research level up to an industrial scale. This tunable kinematic deposition process excels in easily adapting for a large range of environments and growth procedures. Despite the vast advantages associated with sputter deposition, there is a significant lack of in situ analysis options during sputtering. In particular, the area of real time atomic layer control is severely deficient. Atomic layer controlled growth of epitaxial thin films and artificially layered superlattices is critical for both understanding their emergent phenomena and engineering novel material systems and devices. Reflection high-energy electron diffraction (RHEED) is one of the most common in situ analysis techniques during thin film deposition that is rarely used during sputtering due to the strong permanent magnets in magnetron sputter sources and their effect on the RHEED electron beam. In this work we have solved this problem and designed a novel way to deter the effect of the magnets for a wide range of growth geometries and demonstrate the ability for the first time to have layer by layer control during sputter deposition by in situ RHEED. A novel growth chamber that can seamlessly change between pulsed laser deposition and sputtering with RHEED for the growth of complex heterostructures has been designed and implemented. Epitaxial thin films of LaAlO3, La1-xSrxMnO3, and SrRuO3 have all been deposited by sputtering and shown to exhibit clear and extended RHEED oscillations. To solve the magnet issue, a finite element model has been

  19. Effect of annealing temperature on the properties of pulsed magnetron sputtered nanocrystalline Ag:SnO{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Reddy, A. Sivasankar [SEG-CEMUC, Department of Mechanical Engineering, University of Coimbra, 3030-788 Coimbra (Portugal); Division of Advanced Materials Engineering, Kongju National University, Budaedong, Cheonan City (Korea, Republic of); Figueiredo, N.M. [SEG-CEMUC, Department of Mechanical Engineering, University of Coimbra, 3030-788 Coimbra (Portugal); Cho, H.C.; Lee, K.S. [Division of Advanced Materials Engineering, Kongju National University, Budaedong, Cheonan City (Korea, Republic of); Cavaleiro, A., E-mail: albano.cavaleiro@dem.uc.pt [SEG-CEMUC, Department of Mechanical Engineering, University of Coimbra, 3030-788 Coimbra (Portugal)

    2012-04-16

    Highlights: Black-Right-Pointing-Pointer The nanocrystalline Ag:SnO{sub 2} films were prepared by pulsed direct current magnetron sputtering. Black-Right-Pointing-Pointer After annealing, the homogeneity and smoothness of the films was improved. Black-Right-Pointing-Pointer The as deposited films exhibited the highest optical transmittance of 95% with band gap of 3.23 eV. Black-Right-Pointing-Pointer The low electrical resistivity of 0.007 {Omega} cm was obtained at annealing temperature of 500 Degree-Sign C. - Abstract: Ag doped SnO{sub 2} (Ag:SnO{sub 2}) films were prepared on glass substrates by pulsed dc magnetron sputtering. The effect of thermal annealing treatments on the physical properties of the films was investigated. Several analytical techniques such as X-ray diffraction, electron probe microanalysis, scanning electron microscopy, atomic force microscopy, four-point probe and double beam spectrophotometer were used to examine the changes in structural, compositional, surface morphology, electrical and optical properties. XRD results showed that the films were grown with (1 1 0) preferential orientation with an average grain size in the range from 4.8 to 8.9 nm. The smoothness of the films increased with annealing temperature. The films annealed at 500 Degree-Sign C presented an electrical resistivity of 0.007 {Omega} cm. The as deposited films exhibited the highest optical transmittance of 95% with band gap of 3.23 eV.

  20. Origin of the energetic ion beams at the substrate generated during high power pulsed magnetron sputtering of titanium

    CERN Document Server

    Maszl, Christian; Benedikt, Jan; von Keudell, Achim

    2013-01-01

    High power pulsed magnetron sputtering (HiPIMS) plasmas generate energetic metal ions at the substrate as a major difference to conventional direct current magnetron sputtering. The origin of these energetic ions in HiPIMS is still an open issue, which is unraveled by using three fast diagnostics: time resolved mass spectrometry with a temporal resolution of 2 $\\mu$s, phase resolved optical emission spectroscopy with 1 $\\mu$s and the rotating shutter experiment with a resolution of 50 $\\mu$s. A power scan from dcMS-like to HiPIMS plasmas was performed, with a 2-inch magnetron and a titanium target as sputter source and argon as working gas. Clear differences in the transport as well in the energetic properties of Ar$^+$, Ar$^{2+}$, Ti$^+$ and Ti$^{2+}$ were observed. For discharges with highest peak power densities a high energetic group of Ti$^{+}$ and Ti$^{2+}$ could be identified. A cold group of ions is always present. It is found that hot ions are observed only, when the plasma enters the spokes regime, ...

  1. Photocatalytic activity of bipolar pulsed magnetron sputter deposited TiO{sub 2}/TiWO{sub x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Weng, Ko-Wei; Hu, Chung-Hsuan; Hua, Li-Yu; Lee, Chin-Tan [Department of Electronic Engineering, National Quemoy University, 1 Daxue Road, Jinning Township, Kinmen 89250, Taiwan, ROC (China); Zhao, Yu-Xiang [Department of Computer Science and Information Engineering, National Quemoy University, Taiwan, ROC (China); Chang, Julian; Yang, Shu-Yi [Department of Applied English, National Quemoy University, Taiwan, ROC (China); Han, Sheng, E-mail: shenghan@nutc.edu.tw [Center for General Education, National Taichung University of Science and Technology, 129 San-min Road, Section 3, Taichung 40401, Taiwan, ROC (China)

    2016-08-15

    Highlights: • TiO{sub 2}/TiWO{sub x} films were fabricated by a bipolar pulsed magnetron sputtering apparatus. • Titanium oxide being sputtered tungsten enhanced the highly oriented of TiO{sub 2} (1 0 1) plane of the specimen assemblies. • The mechanism WO{sub 3}(h{sup +}, e{sup −})/TiO{sub 2}(h{sup +}, e{sup −}) → WO{sub 3}(e{sup −})/TiO{sub 2}(h{sup +}) shows the higher hydrophilicity and lower contact angle. - Abstract: Titanium oxide films were formed by sputtering and then TiWO{sub x} films were deposited by bipolar pulsed magnetron sputtering with pure titanium and tungsten metal targets. The sputtering of titanium oxide with tungsten enhanced the orientation of the TiO{sub 2} (1 0 1) plane of the specimen assemblies. The main varying parameter was the tungsten pulse power. Titanium oxide sputtered with tungsten using a pulsing power of 50 W exhibited a superior hydrophilic property, and a contact angle of 13.1°. This fabrication conditions maximized the photocatalytic decomposition of methylene blue solution. The mechanism by which the titanium oxide was sputtered with tungsten involves the photogeneration of holes and electron traps, inhibiting the hole–electron recombination, enhancing hydrophilicity and reducing the contact angle.

  2. Structural, optical, and electrical properties of Mo-doped ZnO thin films prepared by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Muying, E-mail: wumy@dgut.edu.cn [School of Electronic Engineering, Dongguan University of Technology, Guangdong Dongguan 523808 (China); Yu, Shihui [School of Electronic and Information Engineering, Tianjin University, Tianjin 300072 (China); Chen, Guihua; He, Lin; Yang, Lei [School of Electronic Engineering, Dongguan University of Technology, Guangdong Dongguan 523808 (China); Zhang, Weifeng [Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics and Electronics, Henan University, Kaifeng 475004 (China)

    2015-01-01

    Highlights: • Mo-doped ZnO thin films were prepared successfully by magnetron sputtering. • The lowest electrical resistivity of the MZO thin film is about 9.2 × 10{sup −4} Ω cm. • The mechanism of the changes of carrier mobility was studied. • The mechanism of the changes of band-gap was discussed and explained possibly. - Abstract: Molybdenum doped zinc oxide thin films have been prepared by RF magnetron sputtering. The influence of the film thickness (120–500 nm) on the structural, electrical, and optical properties of the films is investigated respectively. X-ray diffraction (XRD) studies reveal that with an increase in the film thickness, the crystallinity of the film improves. The obtained film with thickness of 500 nm exhibits the best electrical properties with the lowest resistivity of around 9.6 × 10{sup −4} Ω cm. The mobility varied from 7.8 to 14.7 cm{sup 2} V{sup −1} s{sup −1} without reducing the achieved high carrier concentration of ∼4.5 × 10{sup 20} cm{sup −3}. Optical band gaps extracted from transmission spectra shows irregular changes due to the Burstein–Moss shift modulated by many-body effects.

  3. Fabrication of CdTe/NiTe films on Ni foils by radio-frequency magnetron sputtering method

    Energy Technology Data Exchange (ETDEWEB)

    Mu, Yannan [National Key Lab of Superhard Materials, Jilin University, Changchun 130012 (China); Department of Physics and Chemistry, Heihe University, Heihe 164300 (China); Zhou, Xiaoming [College of Physics, Beihua University, Jilin 132013 (China); Yao, Huizhen; Su, Shi; Lv, Pin; Chen, Yanli; Wang, Jun; Fu, Wuyou [National Key Lab of Superhard Materials, Jilin University, Changchun 130012 (China); Song, Wenxu [College of Electrical and Information Engineering, Beihua University, Jilin 132013 (China); Yang, Haibin, E-mail: yanghb@jlu.edu.cn [National Key Lab of Superhard Materials, Jilin University, Changchun 130012 (China)

    2015-04-25

    Highlights: • The effects of T{sub s} on CdTe deposited on Ni by magnetron sputtering is investigated. • An effective method is studied of making CdTe/NiTe without post-treatment. • As-prepared CdTe/NiTe raised optical absorption and PEC properties. • Pre-deposited Te can react with Ni to generate NiTe at T{sub s} = 350 °C. - Abstract: Cadmium Telluride (CdTe) semiconductor thin films are fabricated on flexible Ni foil substrates using radio-frequency (RF) magnetron sputtering under different substrate temperatures. The crystal structure and properties of the prepared functional thin films were characterized with series analysis technologies. The characterization results revealed that Nickel Telluride (NiTe) phase formatted at the interface of CdTe and Ni substrate when substrate temperature (T{sub s}) is 450 °C. Specially, XRD results demonstrated that CdTe/NiTe films could also be obtained by pre-depositing Te film on Ni and reducing T{sub s} to 350 °C. The investigation on optical and photoelectrochemical (PEC) properties of the products illustrated that compact CdTe/NiTe films had improved the absorption in the visible region. Furthermore, PEC measurements indicated that CdTe/NiTe/Ni photoelectrode can have a promising application in photovoltaic devices.

  4. Microstructure and He desorption behaviors of He charged FeCrNi-based films fabricated by direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Song, L. [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031 (China); Wang, X.P., E-mail: xpwang@issp.ac.cn [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031 (China); Liu, F. [Institute of Plasma Physics, Chinese Academy of Sciences, P.O. Box 1126, Hefei 230031 (China); Gao, Y.X. [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031 (China); Zhang, T., E-mail: zhangtao@issp.ac.cn [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031 (China); Luo, G.N. [Institute of Plasma Physics, Chinese Academy of Sciences, P.O. Box 1126, Hefei 230031 (China); Fang, Q.F.; Liu, C.S. [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031 (China)

    2015-08-31

    He-charged FeCrNi-based films were prepared at different temperatures in a mixed atmosphere of He and Ar by direct-current magnetron sputtering method. X-ray diffraction and energy dispersive spectrometry analysis confirmed the typical austenitic structure of the deposited FeCrNi films and the compositions were in good accordance with 304 stainless steel target. Cross-sectional scanning electron microscopy images revealed the dense columnar nanocrystalline structure of the fabricated FeCrNi films. Nanoindentation measurements showed that the film fabricated at 300 °C exhibited the highest hardness value of 11.5 GPa. He desorption from FeCrNi-based films was traced by thermal desorption spectroscopy; the relatively low He desorption temperature range (150 °C–450 °C) implied that the charged He atoms were mainly located in interstitial sites of FeCrNi-based films. - Highlights: • He-charged columnar nanocrystalline FeCrNi films were prepared by DC magnetron sputtering. • Substrate temperature of 300 °C and He/Ar ratio 1:1 were the best sputtering parameters. • Compact and uniform microstructure obtained at 300 °C resulted in stable, high hardness. • Two He atoms' absorption/desorption mechanisms were revealed by TDS.

  5. Thermal decomposition routes of CrN hard coatings synthesized by reactive arc evaporation and magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ernst, W.; Neidhardt, J. [Christian Doppler Laboratory for Advanced Hard Coatings, Department of Physical Metallurgy and Materials Testing, Franz-Josef Strasse 18, University of Leoben, 8700 Leoben (Austria); Willmann, H. [Materials Center Leoben, Franz-Josef Strasse 13, 8700 Leoben (Austria); Sartory, B. [Institute of Mineralogy and Petrography, University of Innsbruck, Innrain 52, 6020 Innsbruck (Austria); Mayrhofer, P.H. [Department of Physical Metallurgy and Materials Testing, Franz-Josef Strasse 18, University of Leoben, 8700 Leoben (Austria)], E-mail: paul.mayrhofer@unileoben.ac.at; Mitterer, C. [Christian Doppler Laboratory for Advanced Hard Coatings, Department of Physical Metallurgy and Materials Testing, Franz-Josef Strasse 18, University of Leoben, 8700 Leoben (Austria); Department of Physical Metallurgy and Materials Testing, Franz-Josef Strasse 18, University of Leoben, 8700 Leoben (Austria)

    2008-11-28

    This study presents a comparison of the thermal decomposition of CrN hard coatings synthesized by reactive arc evaporation and magnetron sputtering. Structural changes in the coating material were determined by in-situ high-temperature X-ray diffraction and correlated to the results of simultaneous thermal analysis. Annealing temperatures up to 1440 deg. C in Ar and a variation in heating rates gave insights to the different decomposition kinetics for the material deposited by reactive arc evaporation and magnetron sputtering. Both single-phase CrN coatings start to decompose above 925 deg. C under release of nitrogen in two major reaction steps to pure Cr via the intermediate step of Cr{sub 2}N. While the kinetics for the first decomposition reaction from CrN to Cr{sub 2}N is different for both samples, the second step from Cr{sub 2}N into Cr is similar. This behavior can be understood considering the differences in structure, composition, and morphology of both as-deposited coatings and their evolution during thermal analysis.

  6. Al-doped ZnO films deposited on a slightly reduced buffer layer by reactive dc unbalanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Kusayanagi, Minehide; Uchida, Azusa; Oka, Nobuto; Jia, Junjun [Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 252-5258 (Japan); Nakamura, Shin-ichi [Center for Instrumental Analysis, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 252-5258 (Japan); Shigesato, Yuzo, E-mail: yuzo@chem.aoyama.ac.jp [Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 252-5258 (Japan)

    2014-03-31

    Al-doped ZnO (AZO) films were deposited on a fused silica glass substrate by reactive dc unbalanced magnetron sputtering using a Zn–Al (Al: 3.6 at.%) alloy target with an impedance control system. A very thin slightly reduced AZO buffer layer was inserted between the glass substrate and AZO films. For the AZO films deposited at 200 °C, the lowest resistivity in the absence of the buffer layer was 8.0 × 10{sup −4} Ω cm, whereas this was reduced to 5.9 × 10{sup −4} Ω cm after introducing a 5-nm-thick buffer layer. The transmittance for all the films was above 80% in the visible region. The effects of the buffer layer were analysed and discussed in detail. It is found that the insertion of the buffer layer can improve the crystallinity of the AZO film. - Highlights: • Al-doped ZnO (AZO) films with AZO buffer layers were deposited. • Reactive dc unbalance magnetron sputtering with impedance control was used. • Insertion of a buffer layer can lead to a lower resistivity. • Insertion of a buffer layer improved the crystallinity of AZO films.

  7. Return of target material ions leads to a reduced hysteresis in reactive high power impulse magnetron sputtering: Model

    Science.gov (United States)

    Kadlec, Stanislav; Čapek, Jiří

    2017-05-01

    A tendency to disappearing hysteresis in reactive High Power Impulse Magnetron Sputtering (HiPIMS) has been reported previously without full physical explanation. An analytical model of reactive pulsed sputtering including HiPIMS is presented. The model combines a Berg-type model of reactive sputtering with the global HiPIMS model of Christie-Vlček. Both time and area averaging is used to describe the macroscopic steady state, especially the reactive gas balance in the reactor. The most important effect in the presented model is covering of reacted parts of target by the returning ionized metal, effectively lowering the target coverage by reaction product at a given partial pressure. The return probability of ionized sputtered metal has been selected as a parameter to quantify the degree of HiPIMS effects. The model explains the reasons for reduced hysteresis in HiPIMS. The critical pumping speed was up to a factor of 7 lower in reactive HiPIMS compared to the mid-frequency magnetron sputtering. The model predicts reduced hysteresis in HiPIMS due to less negative slope of metal flux to substrates and of reactive gas sorption as functions of reactive gas partial pressure. Higher deposition rate of reactive HiPIMS compared to standard reactive sputtering is predicted for some parameter combinations. Comparison of the model with experiment exhibits good qualitative and quantitative agreement for three material combinations, namely, Ti-O2, Al-O2, and Ti-N2.

  8. Growth of Ge/Si(100) Nanostructures by Radio-Frequency Magnetron Sputtering: the Role of Annealing Temperature

    Institute of Scientific and Technical Information of China (English)

    ALIREZA Samavati; S. K. Ghoshal; Z. Othaman

    2012-01-01

    Surface morphologies of Ge islands deposited on Si(100) substrates are characterized and their optical properties determined.Samples are prepared by rf magnetron sputtering in a high-vacuum chamber and are annealed at 600℃,700℃ and 800℃ for 2 min at nitrogen ambient pressure.Atomic force microscopy,field emission scanning electron microscopy,visible photoluminescence (PL) and energy dispersive x-ray spectroscopy are employed.The results for the annealing temperature-dependent sample morphology and the optical properties are presented.The density,size and roughness are found to be strongly influenced by the annealing temperature.A red shift of ~0.29 eV in the PL peak is observed with increasing annealing temperature.%Surface morphologies of Ge islands deposited on Si(100) substrates are characterized and their optical properties determined. Samples are prepared by rf magnetron sputtering in a high-vacuum chamber and are annealed at 600℃, 700℃ and 800℃ for 2 min at nitrogen ambient pressure. Atomic force microscopy, field emission scanning electron microscopy, visible photoluminescence (PL) and energy dispersive x-ray spectroscopy are employed. The results for the annealing temperature-dependent sample morphology and the optical properties are presented. The density, size and roughness are found to be strongly influenced by the annealing temperature. A red shift of ~0.29 eV in the PL peak is observed with increasing annealing temperature.

  9. Mechanical, tribological and corrosion properties of CrBN films deposited by combined direct current and radio frequency magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Jahodova, Vera [Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore); Koszalin University of Technology, Sniadeckich 2, 75-0453 Koszalin (Poland); Technical University of Liberec, Studentska 1402/2, 461 17 Liberec1 (Czech Republic); Ding, Xing-zhao, E-mail: xzding@SIMTech.a-star.edu.sg [Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore); Seng, Debbie H.L. [Institute of Materials Research and Engineering, 3 Research Link, 117602 (Singapore); Gulbinski, W. [Koszalin University of Technology, Sniadeckich 2, 75-0453 Koszalin (Poland); Louda, P. [Technical University of Liberec, Studentska 1402/2, 461 17 Liberec1 (Czech Republic)

    2013-10-01

    Cr–B–N films were deposited on stainless steel substrates by a combined direct current and radio frequency (RF) reactive unbalanced magnetron sputtering process using two elemental Cr and one compound BN targets. Boron content in the as-deposited films was qualitatively analyzed by time-of-flight secondary ion mass spectroscopy. Films' microstructure, mechanical and tribological properties were characterized by X-ray diffraction, nanoindentation and pin-on-disk tribometer experiments. Corrosion behavior of the Cr–B–N films was evaluated by electrochemical potentiodynamic polarization method in a 3 wt.% NaCl solution. All the films were crystallized into a NaCl-type cubic structure. At lower RF power applied on the BN target (≤ 600 W), films are relatively randomly oriented, and films' crystallinity increased with increasing RF power. With increasing RF power further (≥ 800 W), films became (200) preferentially oriented, and films' crystallinity decreased gradually. With incorporation of a small amount of boron atoms into the CrN films, hardness, wear- and corrosion-resistance were all improved evidently. The best wear and corrosion resistance was obtained for the film deposited with 600 W RF power applied on the BN target. - Highlights: • CrBN films deposited by direct current and radio frequency magnetron sputtering. • CrBN exhibited higher hardness, wear- and corrosion-resistance than pure CrN. • The best wear- and corrosion-resistant film was deposited with 600 W RF power.

  10. Influence of microstructure and surface topography on the electrical conductivity of Cu and Ag thin films obtained by magnetron sputtering

    Science.gov (United States)

    Polonyankin, D. A.; Blesman, A. I.; Postnikov, D. V.

    2017-05-01

    Conductive thin films formation by copper and silver magnetron sputtering is one of high technological areas for industrial production of solar energy converters, energy-saving coatings, flat panel displays and touch control panels because of their high electrical and optical properties. Surface roughness and porosity, average grain size, internal stresses, orientation and crystal lattice type, the crystallinity degree are the main physical properties of metal films affecting their electrical resistivity and conductivity. Depending on the film thickness, the dominant conduction mechanism can affect bulk conductivity due to the flow of electron gas, and grain boundary conductivity. The present investigation assesses the effect of microstructure and surface topography on the electrical conductivity of magnetron sputtered Cu and Ag thin films using X-ray diffraction analysis, scanning electron and laser interference microscopy. The highest specific conductivity (78.3 MS m-1 and 84.2 MS m-1, respectively, for copper and silver films at the thickness of 350 nm) were obtained with the minimum values of roughness and grain size as well as a high degree of lattice structuredness.

  11. Solid oxide fuel cell anode surface modification by magnetron sputtering of NiO/YSZ thin film

    Science.gov (United States)

    Solovyev, A. A.; Shipilova, A. V.; Ionov, I. V.; Smolyanskiy, E. A.; Lauk, A. L.; Kovalchuk, A. N.; Remnev, G. E.; Lebedynskiy, A. M.

    2017-05-01

    NiO/ZrO2-Y2O3 (NiO/YSZ) anode functional layers (AFL) with 16-60 vol.% of NiO were deposited onto NiO/YSZ anode substrates by magnetron sputtering, followed by annealing in air at 1200 °C. The optimal deposition conditions for NiO/YSZ were determined. NiO content in the films was varied by changing the oxygen flow rate during the sputtering process. The microstructure and phase composition of NiO/YSZ anode functional layer were studied by SEM and XRD methods. Anode functional layers were fully crystallized and comprised of grains up to 500 nm in diameter after reduction in hydrogen. Anode-supported solid oxide fuel cells (SOFC) with the diameter of 20 mm including the magnetron sputtered AFL, 4-microns thick YSZ electrolyte and La0.6Sr0.4Co0.2Fe0.8O3/Ce0.9Gd0.1O2 (LSCF/CGO) cathode were fabricated and tested. Electrochemical properties of the single fuel cells were investigated as a function of NiO volume content in AFL and AFL thickness.

  12. Structural and optical properties of ZnO fabricated by reactive e-beam and rf magnetron sputtering techniques

    Energy Technology Data Exchange (ETDEWEB)

    Al Asmar, R.; Ferblantier, G.; Mailly, F.; Foucaran, A. [Centre d' Electronique et de Micro-optoelectronique de Montpellier, Unite mixte de Recherche du CNRS n 5507, Universite Montpellier II, Place E. Bataillon, 34095 Montpellier (France)

    2005-03-01

    Zinc oxide thin films have been grown on (100)-oriented silicon substrate by reactive e-beam evaporation and rf magnetron sputtering techniques and a comparative study is discussed in this paper. Structural, electrical and optical characteristics have been studied before and after annealing in air by measurements of X-ray diffraction, real parts of the dielectric coefficient, and electrical resistivity. X-ray diffraction measurements have shown that ZnO films are highly c-axis-oriented with a full width at half maximum (FWMH) lower than 0.5 . The electrical resistivity is about 10{sup 11} {omega}.cm for magnetron sputtered films and it increases from 10{sup -2} {omega}.cm to about 10{sup 9} {omega}.cm after annealing at 750 C for electron beam evaporated films. Ellipsometry measurements have shown some improvement of the real dielectric coefficient after annealing treatment at 750 C of the ZnO evaporated by electron beam. The AFM images show that the surfaces of the e-beam evaporated ZnO and of the sputtered ZnO are relatively smooth. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Structure and electronic properties of AlCrO{sub x}N{sub 1−x} thin films deposited by reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Najafi, H.; Karimi, A. [Institute of Condensed Matter Physics (ICMP), Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Oveisi, E. [Electron Spectrometry and Microscopy Laboratory (LSME-ICMP), Swiss Federal Institute of Technology in Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Morstein, M. [PLATIT AG, Advanced Coating Systems, CH-2545 Selzach (Switzerland)

    2014-12-01

    In this study, the main attempt is devoted to investigating the microstructure and electronic properties of AlCrO{sub x}N{sub 1−x} films in a wide range of oxygen concentrations from 0 to 1. These oxynitride films were deposited by pulsed DC magnetron sputtering from Al{sub 55}Cr{sub 45} targets. Our results showed that films with x = O/(O + N) < 0.6, exhibit a cubic (B1) lattice with a well-developed columnar structure. The incorporation of oxygen into the films without any oxide segregation results in the formation of a substitutional AlCrO{sub x}N{sub 1−x} solid solution and material system behaves like nitrides electronically. In the range of oxygen contents from 0.6 ≤ O/(O + N) < 0.97, coatings with fine columns, diffuse boundaries and high values of metal vacancies were formed. However, the B1 lattice survived despite the large proportion of oxygen. According to the structural and electronic properties of the corresponding layers, we assign this region to the formation of an amorphous phase and metastable monoxides with a B1 structure. Coatings with O/(O + N) ≥ 0.97 are electronically assigned to a solid solution of α-(Al,Cr){sub 2}(O{sub 0.97},N{sub 0.03}){sub 3} with corundum lattice and finer columnar structure. - Highlights: • AlCr(O{sub x}N{sub 1−x}) layers with variable oxygen content 0 < x < 1 were grown. • The layers with the lowest oxygen content, x < 0.6, electronically behave like nitrides. • Coatings with 0.6 ≤ x < 0.97 are assigned to metastable monoxides. • The oxide region consisted of a solid solution of α-phase with a corundum structure.

  14. Tuning the Photocatalytic Activity of Anatase TiO2 Thin Films by Modifying the Preferred <001> Grain Orientation with Reactive DC Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    B. Stefanov

    2014-08-01

    Full Text Available Anatase TiO2 thin films were deposited by DC reactive magnetron sputtering on glass substrates at 20 mTorr pressure in a flow of an Ar and O2 gas mixture. The O2 partial pressure (PO2 was varied from 0.65 mTorr to 1.3 mTorr to obtain two sets of films with different stoichiometry. The structure and morphology of the films were characterized by secondary electron microscopy, atomic force microscopy, and grazing-angle X-ray diffraction complemented by Rietveld refinement. The as-deposited films were amorphous. Post-annealing in air for 1 h at 500 °C resulted in polycrystalline anatase film structures with mean grain size of 24.2 nm (PO2 = 0.65 mTorr and 22.1 nm (PO2 = 1.3 mTorr, respectively. The films sputtered at higher O2 pressure showed a preferential orientation in the <001> direction, which was associated with particle surfaces exposing highly reactive {001} facets. Films sputtered at lower O2 pressure exhibited no, or very little, preferential grain orientation, and were associated with random distribution of particles exposing mainly the thermodynamically favorable {101} surfaces. Photocatalytic degradation measurements using methylene blue dye showed that <001> oriented films exhibited approximately 30% higher reactivity. The measured intensity dependence of the degradation rate revealed that the UV-independent rate constant was 64% higher for the <001> oriented film compared to randomly oriented films. The reaction order was also found to be higher for <001> films compared to randomly oriented films, suggesting that the <001> oriented film exposes more reactive surface sites.

  15. An investigation on the effect of high partial pressure of hydrogen on the nanocrystalline structure of silicon carbide thin films prepared by radio-frequency magnetron sputtering.

    Science.gov (United States)

    Daouahi, Mohsen; Omri, Mourad; Kerm, Abdul Ghani Yousseph; Al-Agel, Faisal Abdulaziz; Rekik, Najeh

    2015-02-01

    The aim of the study reported in this paper is to investigate the role of the high partial pressure of hydrogen introduced during the growth of nanocrystalline silicon carbide thin films (nc-SiC:H). For this purpose, we report the preparation as well as spectroscopic studies of four series of nc-SiC:H obtained by radio-frequency magnetron sputtering at high partial pressure of hydrogen by varying the percentage of H2 in the gas mixture from 70% to 100% at common substrate temperature (TS=500°C). The effects of the dilution on the structural changes and the chemical bonding of the different series have been studied using Fourier transform infrared and Raman spectroscopy. For this range of hydrogen dilution, two groups of films were obtained. The first group is characterized by the dominance of the crystalline phase and the second by a dominance of the amorphous phase. This result confirms the multiphase structure of the grown nc-SiC:H thin films by the coexistence of the SiC network, carbon-like and silicon-like clusters. Furthermore, infrared results show that the SiC bond is the dominant absorption peak and the carbon atom is preferentially bonded to silicon. The maximum value obtained of the crystalline fraction is about 77%, which is relatively important compared to other results obtained by other techniques. In addition, the concentration of CHn bonds was found to be lower than that of SiHn for all series. Raman measurements revealed that the crystallization occurs in all series even at 100% H2 dilution suggesting that high partial pressure of hydrogen favors the formation of silicon nanocrystallites (nc-Si). The absence of both the longitudinal acoustic band and the transverse optical band indicate that the crystalline phase is dominant.

  16. A comparative study of thin coatings of Au/Pd, Pt and Cr produced by magnetron sputtering for FE-SEM

    NARCIS (Netherlands)

    Stokroos, [No Value; Kalicharan, D; Van der Want, JJL; Jongebloed, WL

    Visualization of structural details of specimens in field emission scanning electron microscopy (FE-SEM) requires optimal conductivity. This paper reports on the differences in conductive layers of Au/Pd, Pt and Cr, with a thickness of 1.5-3.0 nm, deposited by planar magnetron sputtering devices.

  17. Microstructure, mechanical properties and cutting performance of superhard (Ti,Si,Al)N nanocomposite films grown by d.c. reactive magnetron sputtering

    NARCIS (Netherlands)

    Carvalho, S; Ribeiro, E; Rebouta, L; Tavares, CJ; Mendonca, JP; Monteiro, AC; Carvalho, NJM; De Hosson, JTM; Cavaleiro, A

    2004-01-01

    This paper reports on the optimization of coating properties to improve the performance of tools in severe cutting conditions. Tungsten carbide tools coated with (Ti,Si,AI)N films deposited by d.c. reactive magnetron sputtering have been investigated. The structure and the hardness of the coated sam

  18. Changes in the structural and electrical properties of vacuum post-annealed tungsten- and titanium-doped indium oxide films deposited by radio frequency magnetron sputtering

    NARCIS (Netherlands)

    Yan, L.T.; Schropp, R.E.I.

    2011-01-01

    Tungsten- and titanium-doped indium oxide (IWO and ITiO) filmswere deposited at room temperature by radio frequency (RF) magnetron sputtering, and vacuum post-annealing was used to improve the electron mobility. With increasing deposition power, the as deposited films showed an increasingly crystall

  19. Synergistic effect of bias and target currents for magnetron sputtered MoS{sub 2}-Ti composite films

    Energy Technology Data Exchange (ETDEWEB)

    Buelbuel, Ferhat; Efeoglu, Ihsan [Ataturk Univ., Erzurum (Turkey). Dept. of Mechanical Engineering

    2016-07-01

    In terms of modification of the properties of MoS{sub 2}-Ti composite films, especially tribological properties, significant advances have recently been recorded. However, the commercially production of MoS{sub 2}-Ti composite films is still limited, because the production of desirable MoS{sub 2}-Ti composite coating is only possible by using closed field unbalanced magnetron systems and by the selection of convenient deposition parameters. This requirement has focused the researchers' attention on optimization of deposition parameters. This study is concentrating on the effect of the bias voltage and the target currents for MoS{sub 2}-Ti composite films deposited by pulsed magnetron sputtering (PMS). It is found that the bias and the target currents clearly affect the mechanical, structural and tribological properties of MoS{sub 2}-Ti films.

  20. Substrate Temperature Dependent Properties of Cu Doped NiO Films Deposited by DC Reactive Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    Yarraguntla Ashok Kumar Reddy; Akepati Sivasankar Reddy; Pamanji Sreedhara Reddy

    2013-01-01

    The NiO-Cu composite films were deposited on a glass substrate at various substrate temperatures by DC reactive magnetron sputtering technique.The effect of substrate temperature on the structural,optical,morphological and electrical properties of the films was mainly investigated.X-ray diffraction studies revealed that when the substrate temperature increased to above 200 C,the preferred orientation tended to move to another preferred site from (220) to (111) and had a stable cubic structure.The optical transmittance and band gap values increased with increasing substrate temperature.From the morphological studies,it was observed that the grain size and root mean square roughness were increased with increasing substrate temperature.The electrical resistivity of the film decreased to 0.017 Ω cm at high substrate temperature of 400 C.

  1. Room Temperature Ferromagnetism and Structure of Zn_(1-x)Cu_xO Films Synthesized by Radio Frequency Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    CHEN Xuemei; ZHUGE Lanjian; WU Xuemei; WU Zhaofeng

    2009-01-01

    Zn_(1-x)Cu_xO thin films were synthesized by the radio frequency (RF) magnetron sputtering technique using a ZnO target containing different pieces of small Cu-chips.X-ray diffraction (XRD) and scanning electron microscopy (SEM) were employed to analyze the crystalline and microstructure of the film,and X-ray photoelectron spectroscopy (XPS) was used to establish the bonding characteristics and oxidation states of copper inside the ZnO host.Room temperature (RT) ferromagnetism was observed in the Zn_(1-x)Cu_xO films by a Quantum Design superconducting quantum interference device (SQUID) and the saturation magnetic moment of the films was found to decrease with the increase in Cu content.

  2. Enhanced Colouration Efficiency of Pulsed DC Magnetron Sputtered WO3 Films Cycled in H2SO4 Electrolyte Solution

    Directory of Open Access Journals (Sweden)

    K. Punitha

    2014-01-01

    Full Text Available In the present investigation, we report on DC power and pulsing frequency induced changes in electrochromic properties of pulsed DC magnetron sputtered WO3 films by intercalating/deintercalating H+ ions from 0.1 M H2SO4 electrolyte solution. The observed efficient colouration ↔ bleaching mechanism of WO3 films confirms the effective electrochromic nature of the films associated with the electrochemical intercalation/deintercalation of H+ ions and electrons into WO3 lattice. The higher optical modulation was observed in the visible region of the optical transmittance spectra of colored and bleached WO3 films. The maximum coloration efficiency of 79 cm2/C was observed the first time for the film deposited at a DC power of 150 W and a pulsing frequency of 25 kHz.

  3. Structural and magnetic properties of TiZrNi thin films prepared by magnetron sputtering and thermal annealing.

    Science.gov (United States)

    Shin, Hyemin; Choi, Soo-bin; Lee, Ik-jae; Yu, Chung-jong; Kim, Jae-yong

    2010-11-01

    Distinctive thin layers of TiZr and Ni were deposited by using a magnetron sputtering method and a thermal annealing was applied to discover metallic films of quasicrystals. After a heat treatment in vacuum, 70 nm thick deposited layers were well mixed with nominal compositions of 49.7, 29.3 and 21.0 for Ti, Zr and Ni, respectively, which is very close with the one forming a quasicrystalline phase. The magnetization values were significantly decreased from 0.286 to 0.142 emu/mm3 at 2000 Oe, after annealing, while a shape of magnetic hysteresis was maintained. It is believed that a different magnetic behavior after thermal annealing is due to the homogeneous mixing of atomic elements and possible existence of a metastable phase.

  4. Magnetron sputtered zinc oxide nanorods as thickness-insensitive cathode interlayer for perovskite planar-heterojunction solar cells.

    Science.gov (United States)

    Liang, Lusheng; Huang, Zhifeng; Cai, Longhua; Chen, Weizhong; Wang, Baozeng; Chen, Kaiwu; Bai, Hua; Tian, Qingyong; Fan, Bin

    2014-12-10

    Suitable electrode interfacial layers are essential to the high performance of perovskite planar heterojunction solar cells. In this letter, we report magnetron sputtered zinc oxide (ZnO) film as the cathode interlayer for methylammonium lead iodide (CH3NH3PbI3) perovskite solar cell. Scanning electron microscopy and X-ray diffraction analysis demonstrate that the sputtered ZnO films consist of c-axis aligned nanorods. The solar cells based on this ZnO cathode interlayer showed high short circuit current and power conversion efficiency. Besides, the performance of the device is insensitive to the thickness of ZnO cathode interlayer. Considering the high reliability and maturity of sputtering technique both in lab and industry, we believe that the sputtered ZnO films are promising cathode interlayers for perovskite solar cells, especially in large-scale production.

  5. Thin Film growth and characterization of Ti doped ZnO by RF/DC magnetron sputtering

    KAUST Repository

    Baseer Haider, M.

    2015-01-01

    Thin film Ti doped ZnO (Ti-ZnO) film were grown on sapphire (0001) substrate by RF and DC magnetron sputtering. Films were grown at a substrate temperature of 250 °C with different Ti/Zn concentration. Surface chemical study of the samples was performed by X-ray photoelectron spectroscopy to determine the stoichiometry and Ti/Zn ratio for all samples. Surface morphology of the samples were studied by atomic force microscopy. X-ray diffraction was carried out to determine the crystallinity of the film. No secondary phases of TixOy was observed. We observed a slight increase in the lattice constant with the increase in Ti concentration in ZnO. No ferromagnetic signal was observed for any of the samples. However, some samples showed super-paramagnetic phase. © 2015 Materials Research Society.

  6. Room temperature DC magnetron sputtering deposition and field emission of Al-doped ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Ye, Fan; Cai, Xing-Min; Zhang, Dong-Ping; Fan, Ping; Liu, Li-Jun [School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technologies, Shenzhen University, Shenzhen 518060 (China); Dai, Fu-Ping [Department of Applied Physics, Northwestern Polytechnic University, Xian 710072 (China)

    2011-08-15

    Al doped ZnO films were prepared by reactive direct current (DC) magnetron sputtering at room temperature. The targets were metallic Al and Zn while the gases were Ar and O{sub 2}. X-ray diffraction (XRD) shows that the films are of hexagonal structure and Al is successfully doped into ZnO without secondary phases detected. Raman scattering spectra of the films contain the E{sub 1} mode of ZnO. Seebeck effect shows that the films are n-type and four probe instrument shows that the films are very resistive. The high resistivity is due to the compensation of acceptors such as oxygen vacancies and substitutional nitrogen atoms. The acceptors reduce the electron density and increase the work function of ZnO, which therefore weakens the field emission of Al doped ZnO films. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Interfacial Structure and Photocatalytic Activity of Magnetron Sputtered TiO2 on Conducting Metal Substrates

    DEFF Research Database (Denmark)

    Daviðsdóttir, Svava; Petit, Jean-Pierre; Mermoux, Michel

    2014-01-01

    The photocatalytic behavior of magnetron sputtered anatase TiO2 coatings on copper, nickel, and gold was investigated with the aim of understanding the effect of the metallic substrate and coating-substrate interface structure. Stoichiometry and nanoscale structure of the coating were investigated...... using X-ray diffraction, Raman spectroscopy, atomic force microscope, and scanning and transmission electron microscopy. Photocatalytic behavior of the coating was explored by using optical spectrophotometry and electrochemical methods via photovoltage, photocurrent, and scanning kelvin probe microscopy...... measurements. The nature of the metal substrate and coating-substrate interface had profound influence on the photocatalytic behavior. Less photon energy was required for TiO2 excitation on a nickel substrate, whereas TiO2 coating on copper showed a higher band gap attributed to quantum confinement. However...

  8. Exploration of Wettability and Optical Aspects of ZnO Nano Thin Films Synthesized by Radio Frequency Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Kartik H. Patel

    2016-03-01

    Full Text Available This paper aims to explore structural, optical and wettabil‐ ity aspects of zinc oxide (ZnO nano thin films prepared by radio frequency (RF magnetron sputtering. The deposition time is varied from 10 to 50 minutes and sputtering pressure from 0.5 to 8.0 Pa. The increase of deposition time from 10 to 50 minutes leads to formation of a single (002 peak for ZnO films; (100, (101 and (110 peaks are not observed under these conditions. The intensity for (100, (002, (101 and (110 peaks decreases with a sputtering pressure value of 3.5 Pa and above. The optical transmis‐ sion and band gaps are measured by a UV-Vis-NIR spectrophotometer. The wettability and contact-angle hysteresis (CAH for deposited ZnO nano thin films are investigated for water, ethylene glycol, sunflower oil and formamide using a contact-angle goniometer.

  9. Preferential orientation growth of ITO thin film on quartz substrate with ZnO buffer layer by magnetron sputtering technique

    Science.gov (United States)

    Du, Wenhan; Yang, Jingjing; Xiong, Chao; Zhao, Yu; Zhu, Xifang

    2017-07-01

    In order to improve the photoelectric transformation efficiency of thin-film solar cells, one plausible method was to improve the transparent conductive oxides (TCO) material property. In-doped tin oxide (ITO) was an important TCO material which was used as a front contact layer in thin-film solar cell. Using magnetron sputtering deposition technique, we prepared preferential orientation ITO thin films on quartz substrate. XRD and SEM measurements were used to characterize the crystalline structure and morphology of ITO thin films. The key step was adding a ZnO thin film buffer layer before ITO deposition. ZnO thin film buffer layer increases the nucleation center numbers and results in the (222) preferential orientation growth of ITO thin films.

  10. Preliminary Results of Nb Thin Film Coating for HIE-ISOLDE SRF Cavities Obtained by Magnetron Sputtering

    CERN Document Server

    Sublet, A; Calatroni, S; D'Elia, A; Jecklin, N; Mondino, I; Prunet, S; Therasse, M; Venturini Delsolaro, W; Zhang, P

    2013-01-01

    In the context of the HIE-ISOLDE upgrade at CERN, several new facilities for the niobium sputter coating of QWR-type superconducting RF accelerating cavities have been developed, built, and successfully operated. In order to further optimize the production process of these cavities the magnetron sputtering technique has been further investigated and continued as an alternative to the already successfully operational DC bias diode sputtering method. The purpose of this poster is to present the results obtained with this technique. The Nb thickness profile along the cavity and its correlation with the electro-magnetic field distribution inside the cavity are discussed. Film structure, morphology and Residual Resistivity Ratio (RRR) will be considered as well and compared with films obtained by DC bias diode sputtering. Finally these results will be compared with RF measurement of a production-like magnetron-coated cavity.

  11. Effects of oxygen partial pressure on optical properties of NiOX films deposited by reactive DC-magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    Ying Zhou; Yongyou Geng; Donghong Gu

    2006-01-01

    The influence of oxygen partial pressure on the optical properties of NiOX thin films deposited by reactive DC-magnetron sputtering from a nickel metal target in a mixture gas of oxygen and argon was presented.With the oxygen ratio increasing, the reflectivity of the as-deposited films decreased, and optical band gap increased. Thermogravimetric analysis (TGA) showed that the decompose temperature of the films was above 250 ℃. After annealed at 400 ℃, only films deposited at 5% O2/Ar ratio showed high opticalcontrast which was about 52%. Scanning electron microscope (SEM) results revealed that the changes ofsurface morphology were responsible for the optical property variations of the films after annealing. Itsthermal stability and high optical contrast before and after annealing made it a good potential write-onceoptical recording medium.

  12. Native target chemistry during reactive dc magnetron sputtering studied by ex-situ x-ray photoelectron spectroscopy

    Science.gov (United States)

    Greczynski, G.; Mráz, S.; Schneider, J. M.; Hultman, L.

    2017-07-01

    We report x-ray photoelectron spectroscopy (XPS) analysis of native Ti target surface chemistry during magnetron sputtering in an Ar/N2 atmosphere. To avoid air exposure, the target is capped immediately after sputtering with a few-nm-thick Al overlayers; hence, information about the chemical state of target elements as a function of N2 partial pressure pN2 is preserved. Contrary to previous reports, which assume stoichiometric TiN formation, we present direct evidence, based on core-level XPS spectra and TRIDYN simulations, that the target surface is covered by TiNx with x varying in a wide range, from 0.27 to 1.18, depending on pN2. This has far-reaching consequences both for modelling of the reactive sputtering process and for everyday thin film growth where detailed knowledge of the target state is crucial.

  13. Structural and Optical Properties of Mg Doped ZnO Thin Films Deposited by DC Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    A.Sh. Asvarov

    2016-11-01

    Full Text Available This paper reports the growth and characterization of transparent magnesium doped zinc oxide (ZnO:Mg thin films prepared on glass substrates by dc magnetron sputtering. The effects of the Mg concentrations (0, 1 and 5 at % and working gas compositions (pure Ar and Ar-O2 mixture on the structural and optical properties of the ZnO:Mg thin films were investigated. The experiment results showed that the ZnO and ZnO:Mg thin films are polycrystalline with a hexagonal wurtzite structure exhibiting a preferred (002 crystal plane orientation. The results indicated that the crystallinity of ZnO:Mg thin films was significantly affected by both Mg-doping and the woking gas composition. Optical studies revealed that the optical band gap increases with Mg concentration.

  14. Structural, optical, and electrical properties of Mo-doped ZnO thin films prepared by magnetron sputtering

    Science.gov (United States)

    Wu, Muying; Yu, Shihui; Chen, Guihua; He, Lin; Yang, Lei; Zhang, Weifeng

    2015-01-01

    Molybdenum doped zinc oxide thin films have been prepared by RF magnetron sputtering. The influence of the film thickness (120-500 nm) on the structural, electrical, and optical properties of the films is investigated respectively. X-ray diffraction (XRD) studies reveal that with an increase in the film thickness, the crystallinity of the film improves. The obtained film with thickness of 500 nm exhibits the best electrical properties with the lowest resistivity of around 9.6 × 10-4 Ω cm. The mobility varied from 7.8 to 14.7 cm2 V-1 s-1 without reducing the achieved high carrier concentration of ∼4.5 × 1020 cm-3. Optical band gaps extracted from transmission spectra shows irregular changes due to the Burstein-Moss shift modulated by many-body effects.

  15. Ar Pressure Dependence of the Properties of Molybdenum-doped ZnO Films Grown by RF Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Transparent conducting oxide film of molybdenum-doped zinc oxide (MZO) with high transparency and relatively low resistivity was prepared by RF (radio frequency) magnetron sputtering at room temperature. The structural, electrical, and optical properties of the films deposited under different Ar pressure were investigated.XRD (X-ray diffraction) patterns show that the nature of the films is polycrystalline with a hexagonal structure and a preferred orientation along the c-axis. The resistivity increases as Ar pressure increases. The lowest range exceeds 88% for all the samples. The optical band gap decreases from 3.27 to 3.15 eV with increasing Ar pressure from 0.6 to 3.0 Pa.

  16. The properties of transparent conducting molybdenum-doped ZnO films grown by radio frequency magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    Xiu Xian-Wu; Zhao Wen-Jing

    2012-01-01

    Transparent conducting molybdenum-doped zinc oxide films are prepared by radio frequency (RF) magnetron sputtering at ambient temperature.The MoO3 content in the target varies from 0 to 5 wt%,and each film is polycrystalline with a hexagonal structure and a preferred orientation along the c axis.The resistivity first decreases and then increases with the increase in MoO3 content.The lowest resistivity achieved is 9.2 × 10-4 Ω.cm,with a high Hall mobility of 30 cm2 · V- 1.s- 1 and a carrier concentration of 2.3 × 1020 cm-3 at an MoO3 content of 2 wt%.The average transmittance in the visible range is reduced from 91% to 80% with the increase in the MoO3 content in the target.

  17. Effects of sapphire substrates surface treatment on the ZnO thin films grown by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Wang Yinzhen [School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631 (China)], E-mail: agwyz@yahoo.com.cn; Chu Benli [School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631 (China)

    2008-06-01

    The surface treatment effects of sapphire substrate on the ZnO thin films grown by magnetron sputtering were studied. The sapphire substrates properties have been investigated by means of atomic force microscopy (AFM) and X-ray diffraction rocking curves (XRCs). The results show that sapphire substrate surfaces have the best quality by CMP with subsequent chemical etching. The surface treatment effects of sapphire substrate on the ZnO thin films were examined by X-ray diffraction (XRD) and photoluminescence (PL) measurements. Results show that the intensity of (0 0 2) diffraction peak of ZnO thin films on sapphire substrates treated by CMP with subsequent chemical etching was strongest, FWHM of (0 0 2) diffraction peak is the narrowest and the intensity of UV peak of PL spectrum is strongest, indicating surface treatment on sapphire substrate preparation may improve ZnO thin films crystal quality and photoluminescent property.

  18. Characteristics of Nitrogen Doped Diamond-Like Carbon Films Prepared by Unbalanced Magnetron Sputtering for Electronic Devices.

    Science.gov (United States)

    Lee, Jaehyeong; Choi, Byung Hui; Yun, Jung-Hyun; Park, Yong Seob

    2016-05-01

    Synthetic diamond-like carbon (DLC) is a carbon-based material used mainly in cutting tool coatings and as an abrasive material. The market for DLC has expanded into electronics, optics, and acoustics because of its distinct electrical and optical properties. In this work, n-doped DLC (N:DLC) films were deposited on p-type silicon substrates using an unbalanced magnetron sputtering (UBMS) method. We investigated the effect of the working pressure on the microstructure and electrical properties of n-doped DLC films. The structural properties of N:DLC films were investigated by Raman spectroscopy and SEM-EDX, and the electrical properties of films were investigated by observing the changes in the resistivity and current-voltage (I-V) properties. The N:DLC films prepared by UBMS in this study demonstrated good conducting and physical properties with n-doping.

  19. Thickness dependence of piezoelectric properties of BiFeO3 films fabricated using rf magnetron sputtering system

    Science.gov (United States)

    Aramaki, Masaaki; Kariya, Kento; Yoshimura, Takeshi; Murakami, Shuichi; Fujimura, Norifumi

    2016-10-01

    The piezoelectric property of BiFeO3 films prepared on a (100) LaNiO3/Si(100) substrate using an rf magnetron sputtering system was investigated for their applications in MEMS vibration energy harvesters. The X-ray diffraction profiles indicate that (100)-oriented BiFeO3 films with thicknesses from 450 to 1750 nm were obtained at a deposition temperature of 510 °C. All the films showed well-defined ferroelectric hysteresis loops at room temperature. The thickness dependence of crystallinity and electrical properties indicated that the films have a bottom layer with a high defect density. The e 31,f piezoelectric coefficient and electromechanical coupling factor (k\\text{31,f}2) increase with increasing film thickness and reach -3.2 C/m2 and 3.3%, respectively, at a thickness of 1750 nm, which is considered to be caused by the decrease in defect density.

  20. High-responsivity UV-Vis Photodetector Based on Transferable WS2 Film Deposited by Magnetron Sputtering.

    Science.gov (United States)

    Zeng, Longhui; Tao, Lili; Tang, Chunyin; Zhou, Bo; Long, Hui; Chai, Yang; Lau, Shu Ping; Tsang, Yuen Hong

    2016-01-29

    The two-dimensional layered semiconducting tungsten disulfide (WS2) film exhibits great promising prospects in the photoelectrical applications because of its unique photoelectrical conversion property. Herein, in this paper, we report the simple and scalable fabrication of homogeneous, large-size and transferable WS2 films with tens-of-nanometers thickness through magnetron sputtering and post annealing process. The produced WS2 films with low resistance (4.2 kΩ) are used to fabricate broadband sensitive photodetectors in the ultraviolet to visible region. The photodetectors exhibit excellent photoresponse properties, with a high responsivity of 53.3 A/W and a high detectivity of 1.22 × 10(11) Jones at 365 nm. The strategy reported paves new way towards the large scale growth of transferable high quality, uniform WS2 films for various important applications including high performance photodetectors, solar cell, photoelectrochemical cell and so on.

  1. Optoelectronic and electrochemical properties of nickel oxide (NiO) films deposited by DC reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Subramanian, B. [Electrochemical Materials Science Division, Central Electrochemical Research Institute, Karaikudi 630 006 (India); Mohamed Ibrahim, M. [Birla Institute of Technology and Science, Pilani, Dubai (United Arab Emirates); Senthilkumar, V. [School of Physics, Alagappa University, Karaikudi 630 003 (India); Murali, K.R.; Vidhya, VS. [Electrochemical Materials Science Division, Central Electrochemical Research Institute, Karaikudi 630 006 (India); Sanjeeviraja, C. [School of Physics, Alagappa University, Karaikudi 630 003 (India); Jayachandran, M. [Electrochemical Materials Science Division, Central Electrochemical Research Institute, Karaikudi 630 006 (India)], E-mail: jayam54@yahoo.com

    2008-11-30

    Nickel oxide (NiO) thin films were deposited onto glass substrates by the DC reactive magnetron sputtering technique. The as-deposited films were post-annealed in air at 450-500 deg. C for 5 h. The effect of annealing on the structural, microstructural, electrical and optical properties were studied by X-ray diffraction (XRD), atomic force microscope (AFM), four-probe resistivity measurement and UV-vis spectrophotometer. XRD studies indicated cubic structure with a lattice parameter of 0.4193 nm. The band gap of the films was found to be 3.58 eV. Fourier transform infrared (FTIR) studies indicated a broad spectrum centered at 451.6 cm{sup -1}. Photoluminescence studies exhibited room temperature emission at 440 nm. Cyclic voltammetry studies in 1 M KOH solution revealed the electrochromic nature of the NiO films prepared in the present study.

  2. Structure-stress-resistivity relationship in WTi alloy ultra-thin and thin films prepared by magnetron sputtering

    Science.gov (United States)

    Le Priol, A.; Le Bourhis, E.; Renault, P.-O.; Muller, P.; Sik, H.

    2013-06-01

    WTi thin films were prepared from an alloyed target (W:Ti ˜ 70:30 at. %) by magnetron sputtering. Body-centered cubic WxTi1-x solid solutions with a {110} fiber texture and columnar grains have been produced with 0.75WTi thin films is about 60-200 μΩ cm, depending on the film thickness and microstructure (sputtering conditions). For both ultra-thin (9.5 nm) and thin (180 nm) films, a stress transition from compressive to tensile is observed as the working pressure increases. The process-structure-property relations of the WTi ultra-thin and thin films are discussed in relation with the state of the art.

  3. Influence of low energy ion implantation on mechanical properties of magnetron sputtered metastable (Cr,Al)N thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ulrich, S.; Holleck, H.; Ye, J.; Leiste, H.; Loos, R.; Stueber, M.; Pesch, P.; Sattel, S

    2003-08-01

    Metastable, nanocrystalline, ternary chromium aluminum nitride thin films have been deposited by reactive unbalanced magnetron sputtering of a chromium aluminum nitride target in a pure nitrogen atmosphere. The film constitution has been examined by X-ray microanalysis, X-ray reflectivity, X-ray diffraction, transmission electron microscopy and high-resolution electron microscopy. The mechanical properties such as Vickers hardness, elastic modulus and internal stress have been determined as a function of ion energy of bombarding particles during film growth. It was possible to show that the dependence of these properties on ion energy can be described by two physical mechanisms, both subsurface nitrogen ion implantation and nitrogen ion bombardment induced relaxation processes, whereas chemical composition is not affected in the case of our reactive deposition conditions.

  4. Silver nanoparticles deposited on anodic aluminum oxide template using magnetron sputtering for surface-enhanced Raman scattering substrate

    Energy Technology Data Exchange (ETDEWEB)

    Wong-ek, Krongkamol [Nanoscience and Technology Program, Chulalongkorn University, Bangkok 10330 (Thailand); Eiamchai, Pitak; Horprathum, Mati; Patthanasettakul, Viyapol [National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Rd., Klong Luang, Pathumthani 12120 (Thailand); Limnonthakul, Puenisara [Department of Physics, Faculty of Science, King Mongkut' s University of Technology Thonburi, Bangkok 10140 (Thailand); Chindaudom, Pongpan [National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Rd., Klong Luang, Pathumthani 12120 (Thailand); Nuntawong, Noppadon, E-mail: noppadon.nuntawong@nectec.or.t [National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Rd., Klong Luang, Pathumthani 12120 (Thailand)

    2010-09-30

    Low-cost and highly sensitive surface-enhanced Raman scattering (SERS) substrates have been fabricated by a simple anodizing process and a magnetron sputtering deposition. The substrates, which consist of silver nanoparticles embedded on anodic aluminum oxide (AAO) templates, are investigated by a scanning electron microscope and a confocal Raman spectroscopy. The SERS activities are demonstrated by Raman scattering from adsorbed solutions of methylene blue and pyridine on the SERS substrate surface. The most optimized SERS substrate contains the silver nanoparticles, with a size distribution of 10-30 nm, deposited on the AAO template. From a calculation, the SERS enhancement factor is as high as 8.5 x 10{sup 7}, which suggests strong potentials for direct applications in the chemical detection and analyses.

  5. Influence of temperature on the microstructure of V2O5 film prepared by DC magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    SU Qing; PAN Xiaojun; XIE Erqing; WANG Yinyue; QIU Jiawen; LIU Xueqin

    2006-01-01

    V2O5 films were prepared on silicon wafers by DC magnetron sputtering and post-annealing under various conditions. The influence of depositing and post-annealing temperatures on microstructure of V2O5 films was studied by XRD and Raman scattering measurements. The results reveal that sputtered V2O5 films show preferred growth orientation along (001) planes and the c -axis is perpendicular to the silicon substrate surface. It is interesting to find that both the V2O5 film deposited at temperature of 511 ℃ and the one annealed at 500℃ exhibit desirable layer-type structure of orthorhombic symmetry. Such layer-typed V2O5 films are promising candidates for cathodes of rechargeable lithiumor magnesium thin-film batteries.

  6. RF Magnetron Sputtering Grown Cu2O Film Structural, Morphological, and Electrical Property Dependencies on Substrate Type.

    Science.gov (United States)

    Ahn, Heejin; Um, Youngho

    2015-03-01

    We investigated the structural, morphological, and electrical properties of cuprous oxide (Cu2O) film dependency on substrate type. Thin films grown using RF magnetron sputtering were characterized by scanning electron microscopy, X-ray diffraction (XRD), and Hall effect measurements. Cu2O thin films were deposited onto sapphire (0001), Si (100), and MgO (110) substrates, and showed Cu2O single phase only, which was confirmed by XRD measurement. Relatively larger compressive strain existed in Cu2O film grown on sapphire and Si, while a smaller tensile strain appeared in Cu2O film grown on MgO. Cu2O thin film crystallite sizes showed a linear dependence on strain. Moreover, film carrier concentration and mobility increased with increasing strain, while resistivity decreased with decreasing strain. Cu2O film strain due to induced strain opens the possibility of controlling structural and electrical properties in device applications.

  7. Physical vapour deposition reactive magnetron sputtering for the production and application of dichroics in photovoltaic system with solar spectral splitting

    Energy Technology Data Exchange (ETDEWEB)

    Raniero, W., E-mail: walter.raniero@unitn.it [Department of Industrial Engineering, University of Trento, Via Sommarive 9, 38123 Trento (Italy); INFN – Legnaro National Laboratories, Viale dell’Università 2, 35020 Legnaro, PD (Italy); Campostrini, M., E-mail: m.campostrini.1@studenti.unitn.it [Department of Industrial Engineering, University of Trento, Via Sommarive 9, 38123 Trento (Italy); Maggioni, G., E-mail: Gianluigi.Maggioni@lnl.infn.it [Department of Physics and Astronomy, University of Padua, Padua (Italy); INFN – Legnaro National Laboratories, Viale dell’Università 2, 35020 Legnaro, PD (Italy); Mea, G. Della, E-mail: dellamea@ing.unitn.it [Department of Industrial Engineering, University of Trento, Via Sommarive 9, 38123 Trento (Italy); INFN – Legnaro National Laboratories, Viale dell’Università 2, 35020 Legnaro, PD (Italy); Quaranta, A., E-mail: quaranta@ing.unitn.it [Department of Industrial Engineering, University of Trento, Via Sommarive 9, 38123 Trento (Italy); INFN – Legnaro National Laboratories, Viale dell’Università 2, 35020 Legnaro, PD (Italy)

    2014-07-01

    This paper aims at designing, producing and characterizing a series of dichroic filters that are made up of a stack of layers with variable nanometer thickness. Such filters are created by PVD reactive magnetron sputtering, obtaining SiO{sub 2} and TiO{sub 2} through an active oxidation during the deposition. The single layers have then been analyzed using different techniques including RBS (Rutherford Backscattering Spectrometry) to determine the stoichiometry, AFM (Atomic Force Microscope) to assess the deposition rate, and UV–vis–NIR spectrophotometric analysis to evaluate the optical response. The application of the dichroic in concentration photovoltaic systems, separates the solar radiation in two optical spectral bands [7], that allows to couple them with a different solar cells which have dedicated external quantum efficiency. The optical separation using dichroic filters allows to combine different photovoltaic cells with an appropriate energy gap, thus optimizing the photovoltaic conversion.

  8. Growth of high-quality CuInSe sub 2 polycrystalline films by magnetron sputtering and vacuum selenization

    CERN Document Server

    Xie Da Tao; Wang Li; Zhu Feng; Quan Sheng Wen; Meng Tie Jun; Zhang Bao Cheng; Chen J

    2002-01-01

    High-quality CuInSe sub 2 thin films have been prepared using a two stages process. Cu and In were co-deposited onto glass substrates by magnetron sputtering method to produce a predominant Cu sub 1 sub 1 In sub 9 phase. The alloy films were selenised and annealed in vacuum at different temperature in the range of 200-500 degree C using elemental selenium in a closed graphite box. X-ray diffraction and scanning electron microscopy were used to characterize the films. It is found that the polycrystalline and single-phase CuInSe sub 2 films were uniform and densely packed with a grain size of about 3.0 mu m

  9. Time resolved measurement of film growth during reactive high power pulsed magnetron sputtering (HIPIMS) of titanium nitride

    CERN Document Server

    Mitschker, Felix; Benedikt, Jan; Maszl, Christian; von Keudell, Achim

    2013-01-01

    The growth rate during reactive high power pulsed magnetron sputtering (HIPIMS) of titanium nitride is measured with a temporal resolution of up to 25 us using a rotating shutter concept. According to that concept a 200 um slit is rotated in front of the substrate synchronous with the HIPIMS pulses. Thereby, the growth flux is laterally distributed over the substrate. By measuring the resulting deposition profile with profilometry and with x-ray photoelectron spectroscopy, the temporal variation of the titanium and nitrogen growth flux per pulse is deduced. The analysis reveals that film growth occurs mainly during a HIPIMS pulse, with the growth rate following the HIPIMS phases ignition, current rise, gas rarefaction, plateau and afterglow. The growth fluxes of titanium and nitrogen follow slightly different behaviors with titanium dominating at the beginning of the HIPIMS pulse and nitrogen at the end of the pulse. This is explained by the gas rarefaction effect resulting in a dense initial metal plasma and...

  10. High power impulse magnetron sputtering and related discharges: scalable plasma sources for plasma-based ion implantation and deposition

    Energy Technology Data Exchange (ETDEWEB)

    Anders, Andre

    2009-09-01

    High power impulse magnetron sputtering (HIPIMS) and related self-sputtering techniques are reviewed from a viewpoint of plasma-based ion implantation and deposition (PBII&D). HIPIMS combines the classical, scalable sputtering technology with pulsed power, which is an elegant way of ionizing the sputtered atoms. Related approaches, such as sustained self-sputtering, are also considered. The resulting intense flux of ions to the substrate consists of a mixture of metal and gas ions when using a process gas, or of metal ions only when using `gasless? or pure self-sputtering. In many respects, processing with HIPIMS plasmas is similar to processing with filtered cathodic arc plasmas, though the former is easier to scale to large areas. Both ion implantation and etching (high bias voltage, without deposition) and thin film deposition (low bias, or bias of low duty cycle) have been demonstrated.

  11. Deposition and characterization of titanium carbide thin films by magnetron sputtering using Ti and TiC targets

    Science.gov (United States)

    Ait Djafer, Amina Zouina; Saoula, Nadia; Madaoui, Noureddine; Zerizer, Abdellatif

    2014-09-01

    In this study we present the effect of negative bias applied to substrate and the pressure on the properties of TiC films (i.e. structure, Raman spectroscopy, electrical resistivity and hardness). The elaboration of our films has been carried out by RF-Magnetron Sputtering, 13.56 MHz, using two targets: titanium carbide and pure titanium. The film depositions have been done on silicon, glass and steel substrates. The total pressure was 10-60 mTorr. The attention was given to study the influence of different parameters, pressure and substrate-bias, on the properties of TiC layers. In this paper, a comparison between the properties of TiC prepared using pure titanium target and titanium carbide target is made. The deposited layers were characterized by XRD analysis, nanoindentation, four probe technique and Raman spectroscopy.

  12. Effect of growth rate on crystallization of HfO2 thin films deposited by RF magnetron sputtering

    Science.gov (United States)

    Dhanunjaya, M.; Manikanthababu, N.; Pathak, A. P.; Rao, S. V. S. Nageswara

    2016-05-01

    Hafnium oxide (HfO2) is the potentially useful dielectric material in both; electronics to replace the conventional SiO2 as gate dielectric and in Optics as anti-reflection coating material. In this present work we have synthesized polycrystalline HfO2 thin films by RF magnetron sputtering deposition technique with varying target to substrate distance. The deposited films were characterized by X-ray Diffraction, Rutherford Backscattering Spectrometry (RBS) and transmission and Reflection (T&R) measurements to study the growth behavior, microstructure and optical properties. XRD measurement shows that the samples having mixed phase of monoclinic, cubic and tetragonal crystal structure. RBS measurements suggest the formation of Inter Layer (IL) in between Substrate and film

  13. Electrical and optical study of transparent V-based oxide semiconductors prepared by magnetron sputtering under different conditions

    Directory of Open Access Journals (Sweden)

    E. Prociow

    2011-04-01

    Full Text Available This work is focused on structural, optical and electrical behaviors of vanadium-based oxide thin films prepared by magnetron sputtering under different conditions. Thin films have been deposited on glass substrates from metallic vanadium target at low sputtering pressure. Different working gases: argon/oxygen mixture, and especially pure oxygen gas, have been applied. Results of X-ray diffraction together with optical transmission and temperature- dependent electrical resistivity measurements have been presented. Transmission coefficient, cut-off wavelength and the width of the optical band gap have been calculated from optical measurements. The d.c. resistivity values at room temperature and thermal activation energy have been obtained from electrical investigations. The influence of sputtering process conditions on optical and electrical properties has been discussed.

  14. Effect of oxygen flow rate on the properties of SiOx films deposited by reactive magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    Fachun Lai; Ming Li; Haiqian Wang; Yousong Jiang; Yizhou Song

    2005-01-01

    @@ SiOx (x = 0- 2) films were deposited on BK-7 substrates by a low frequency reactive magnetron sputtering system with the oxygen flow rate (OFR) changing from 0 to 30 sccm. The samples were characterized by atomic force microscopy, spectrophotometer, and X-ray photoelectron spectroscopy. The extinction coefficient and refractive index decrease, while the optical transmittance increases with the increase of OFR from 0 to 17 sccm. The root mean square surface roughness has a maximum at 10 sccm OFR. The highest deposition rate is at 15 sccm OFR. Our results show that the films deposited at 20 sccm OFR are stoichiometric silica with relatively high deposition rate, low extinction coefficient, and low surface roughness. Therefore, a precise control of OFR is very important to obtain high quality films for optical applications.

  15. Study of the wear resistance of ion-plasma coatings based on titanium and aluminum and obtained by magnetron sputtering

    Science.gov (United States)

    Kachalin, G. V.; Mednikov, A. F.; Tkhabisimov, A. B.; Sidorov, S. V.

    2017-05-01

    The paper presents the results of metallographic researches and erosion tests of ion-plasma coatings (based on titanium, aluminum and their nitrides), which were formed on samples of 12Kh13 and EI961 blade steels. Erosion tests and studies of characteristics of obtained by magnetron sputtering coatings were carried out by using a set of research equipment UNU “Erosion-M” NRU “MPEI”. It was found that the formed Ti/Al-TiN/AlN coatings increase the duration of blade steels erosion wear incubation period by at least in 1.5 times and have a layered structure with thicknesses of nitride layers 1.3-1.6 μm and intermediate metallic layers 0.3-0.5 μm, with a total thickness of coatings of 10-14 μm for 12Kh13steel samples and 19-21 μm for EI961 steel samples.

  16. Fabrication and Electrical Characterization of the Si/ZnO/ZnO:Al Structure Deposited by RF-Magnetron Sputtering

    Science.gov (United States)

    Alaya, A.; Djessas, K.; El Mir, L.; Khirouni, K.

    2016-10-01

    The electrical transport properties of the structures of Si(p)/ZnO(i)/ZnO: Al(3%) and Si(p)/PS/ZnO(i)/ZnO: Al(3%) deposited by radio-frequency-magnetron sputtering were investigated and compared by using current-voltage and impedance spectroscopy measurements in a wide temperature range of 80-300 K. Aluminum-doped ZnO is considered to be one of the most important transparent conducting oxide materials due to its high conductivity, good transparency and low cost. From the current-voltage-temperature ( I- V- T) characteristics, it was found that both structures had a good rectifying behavior. This behavior decreases according to the porous silicon layer. The variation of the conductance with frequency indicates the semiconducting behavior and superposition of different conduction mechanisms. The insertion of the porous silicon layer results in a decrease of conductivity, which is attributed to reduced conductivity of defect-rich porous silicon.

  17. SEMICONDUCTOR MATERIALS Electrical and optical properties of deep ultraviolet transparent conductive Ga2O3/ITO films by magnetron sputtering

    Science.gov (United States)

    Jianjun, Liu; Jinliang, Yan; Liang, Shi; Ting, Li

    2010-10-01

    Ga2O3/ITO films were prepared by magnetron sputtering on quartz glass substrates. The transmittance and sheet resistance of ITO films and Ga2O3/ITO films were measured by using a double beam spectrophotometer and four point probes. The effect of the ITO layer and Ga2O3 layer thickness on the electrical and optical properties of Ga2O3/ITO bi-layer films were investigated in detail. Ga2O3 (50 nm)/ITO (23 nm) films exhibited a low sheet resistance of 323 Ω/□ and high deep ultraviolet transmittance of 77.6% at a wavelength of 280 nm. The ITO layer controls the ultraviolet transmittance and sheet resistance of Ga2O3/ITO films. The Ga2O3 layer thickness has a marked effect on the transmission spectral shape of Ga2O3/ITO films in the violet spectral region.

  18. Structural, electric and humidity sensitivity properties of Zn-doped LPFO thin films deposited by rf magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Doroftei, Corneliu, E-mail: docorneliu@yahoo.com [Institute of Technical Physics, 47 D. Mangeron Blvd, 700050 Iasi (Romania); Alexandru Ioan Cuza University, Faculty of Physics, 11 Carol I Blvd, 7000506 Iasi (Romania)

    2015-05-01

    Lanthanum perovskite LaFeO{sub 3} (LFO) is a semi-conducting oxide and it has been extensively studied with reference to several potential applications, such as gas sensors, humidity sensors and catalysts. This oxide crystallizes in an orthorhombic perovskite structure. This work is dedicated to the study of the structural, electric and humidity sensitivity properties of some thin films obtained through rf magnetron sputtering using as targets La{sub 0.8}Pb{sub 0.2}FeO{sub 3} (LPFO) perovskites in which Fe-ions were partially substituted by Zn-ions. The effects of substitutions, substrate (quartz and alumina) and its temperature during deposition, as well as of working gas composition (O{sub 2}/(O{sub 2} + Ar)) and subsequent heat treatments have been investigated. Electrical behavior of the deposited layers is that of a p-type semiconductor. Thermal activation energy (Ea) is around 0.5 eV and increases to 0.62 eV with the increase of zinc ions content (from 0 to 0.2) in LPFO target. The influence of the environmental humidity on the electric resistivity of the obtained films was determined within the 0%–98% RH interval. By increasing the amount of zinc ions which substitute the iron in LPFO target, films much more sensitive to humidity between 53% and 98% RH were obtained. - Highlights: • The thin films obtained by rf magnetron sputtering. • The targets have been used with perovskite structure. • The films sensitive to humidity between 53% and 98% RH were obtained.

  19. Effect of thickness on surface morphology, optical and humidity sensing properties of RF magnetron sputtered CCTO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ahmadipour, Mohsen [Structural Materials Niche Area, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Penang (Malaysia); Ain, Mohd Fadzil [School of Electrical and Electronic Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Penang (Malaysia); Ahmad, Zainal Arifin, E-mail: srzainal@usm.my [Structural Materials Niche Area, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Penang (Malaysia)

    2016-11-01

    Highlights: • CCTO thin film was synthesized by RF magnetron sputtering successfully. • Increase in thickness lead to increase in grain size and decrease in band gap. • Short response times and recovery times of lead CCTO humidity sensor. • Sensor could detect humidity range (30–90%). - Abstract: In this study, calcium copper titanate (CCTO) thin films were deposited on ITO substrates successfully by radio frequency (RF) magnetron sputtering method in argon atmosphere. The CCTO thin films present a polycrystalline, uniform and porous structure. The surface morphology, optical and humidity sensing properties of the synthesized CCTO thin films have been studied by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), UV–vis spectrophotometer and current-voltage (I–V) analysis. XRD and AFM confirmed that the intensity of peaks and pore size of CCTO thin films were enhanced by increasing the thin films. Tauc plot method was adopted to estimate the optical band gaps. The surface structure and energy band gaps of the deposited films were affected by film thickness. Energy band gap of the layers were 3.76 eV, 3.68 eV and 3.5 eV for 200 nm, 400 nm, and 600 nm CCTO thin films layer, respectively. The humidity sensing properties were measured by using direct current (DC) analysis method. The response times were 12 s, 22 s, and 35 s while the recovery times were 500 s, 600 s, and 650 s for 200 nm, 400 nm, and 600 nm CCTO thin films, respectively at humidity range of 30–90% relative humidity (RH).

  20. The influence of target erosion grade in the optoelectronic properties of AZO coatings growth by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zubizarreta, C., E-mail: cristina.zubizarreta@tekniker.es [IK4-Tekniker, Research Centre, c/ Iñaki Goenaga, 5, 20600 Eibar, Guipuzkoa (Spain); G-Berasategui, E.; Ciarsolo, I.; Barriga, J. [IK4-Tekniker, Research Centre, c/ Iñaki Goenaga, 5, 20600 Eibar, Guipuzkoa (Spain); Gaspar, D.; Martins, R.; Fortunato, E. [i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa (Portugal)

    2016-09-01

    Graphical abstract: - Highlights: • High quality AZO films deposited at low temperature by RF magnetron sputtering. • Transmittance values of 84% and resistivity of 1.9 × 10{sup −3} Ω cm were obtained. • Stable optoelectronic and structural properties during whole life of the target. • RF MS: robust and reliable for the industrial manufacture of AZO frontal electrode. - Abstract: Aluminum-doped zinc oxide (AZO) transparent conductor coating has emerged as promising substitute to tin-doped indium oxide (ITO) as electrode in optoelectronic applications such as photovoltaics or light emitting diodes (LEDs). Besides its high transmission in the visible spectral region and low resistivity, AZO presents a main advantage over other candidates such as graphene, carbon nanotubes or silver nanowires; it can be deposited using the technology industrially implemented to manufacture ITO layers, the magnetron sputtering (MS). This is a productive, reliable and green manufacturing technique. But to guarantee the robustness, reproducibility and reliability of the process there are still some issues to be addressed, such as the effect and control of the target state. In this paper a thorough study of the influence of the target erosion grade in developed coatings has been performed. AZO films have been deposited from a ceramic target by RF MS. Structure, optical transmittance and electrical properties of the produced coatings have been analyzed as function of the target erosion grade. No noticeable differences have been found neither in optoelectronic properties nor in the structure of the coatings, indicating that the RF MS is a stable and consistent process through the whole life of the target.

  1. Bias-magnetron sputtering of tungsten carbide coatings on steel; Bias-Magnetron Sputtern von Wolframkarbid-Schichten auf Stahl

    Energy Technology Data Exchange (ETDEWEB)

    Gubisch, M.; Spiess, L.; Romanus, H.; Schawohl, J.; Knedlik, C. [Technische Universitaet Ilmenau, Institut fuer Werkstofftechnik/ Zentrum fuer Mikro- und Nanotechnologien (ZMN), Ilmenau (Germany)

    2004-11-01

    The influence of bias voltage between 0 V to -800 V on the properties of dc and rf magnetron sputtered tungsten carbide coatings with 1 {mu}m thickness on cold work steel 90MnCrV8 were determined. The coatings were analysed with SEM, AFM, EDX, XRD and micro hardness tester. The morphology, the chemical composition, the phase transformation and the hardness of the deposited layers were appropriated. Non-stoechiometric cubic phase of tungsten carbide WC{sub 1-x} with <100> preferred orientation formed by non reactive magnetron sputtering without ion bombardment. Chemical composition, crystallinity, preferred orientation, morphology and phases are influence by variation of bias voltage. These changes in coating properties results in significant variation of hardness between 8 GPa and 20 GPa. (Abstract Copyright [2004], Wiley Periodicals, Inc.) [German] In dieser Arbeit wird der Einfluss der Biasspannung im Bereich von 0 V bis -800 V auf die Eigenschaften von 1 {mu}m dicken DC und RF Magnetron gesputterten Wolframkarbidschichten auf niedriglegierten Kaltarbeitsstahl 90MnCrV8 untersucht. Die Schichten wurden mittels REM, EDX, AFM, Universalhaertepruefgeraet und XRD hinsichtlich der wichtigsten Schichteigenschaften wie Morphologie, Phasenausbildung, Vorzugsorientierung, Universalhaerte und chemischer Zusammensetzung charakterisiert. Ohne zusaetzlichen Ionenbeschuss bildet sich beim nichtreaktiven Magnetron Sputtern die nicht stoechiometrische kubische Phase des Wolframkarbids WC{sub 1-x} mit einer <100>-Orientierung aus. In Abhaengigkeit der Biasspannung wird die chemischen Zusammensetzung, Kristallinitaet, Vorzugsorientierung, Morphologie und die Phasenausbildung beeinflusst. Die Veraenderungen der genannten Schichteigenschaften fuehrten zu signifikanten Haerteaenderungen im Bereich von 8 GPa und 20 GPa. (Abstract Copyright [2004], Wiley Periodicals, Inc.)

  2. Structure, optical properties and thermal stability of HfErO films deposited by simultaneous RF and VHF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, H.Y. [Soochow University, College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Suzhou (China); Nanjing University of Posts and Telecommunications, School of Tongda, Nanjing (China); Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); He, H.J.; Zhang, Z.; Jin, C.G.; Yang, Y.; Wang, Y.Y.; Ye, C. [Soochow University, College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Suzhou (China); Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); Zhuge, L.J. [Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); Soochow University, Analysis and Testing Center, Suzhou (China); Wu, X.M. [Soochow University, College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Suzhou (China); Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); Chinese Academy of Sciences, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai (China)

    2015-01-23

    HfErO films are deposited on Si substrates by simultaneous radio frequency (RF) and very high frequency (VHF) magnetron sputtering technique. The content of the doped ingredient of Er and the body composition of HfO{sub x} are, respectively, controlled through the VHF and RF powers. Low content of Er doping in the HfErO films can be achieved, because the VHF source of 27.12 MHz has higher ion energy and lower ion flux than the RF source resulting in low sputtering rate in the magnetron sputtering system. The structure, optical properties and thermal stability of the HfErO films are investigated in this work. Results show that the doped content of Er is independently controlled by the VHF power. The oxygen vacancies are created by the Er incorporation. The hafnium in the HfErO films forms mixed valence of Hf{sup 2+} and Hf{sup 4+}. The HfErO films are composed with the structures of HfO{sub 2}, HfO and ErO{sub x}, which can be optimized through the VHF power. At high VHF power, the Hf-Er-O bonds are formed, which demonstrates that the Er atoms are doped into the lattice of HfO{sub 2} in the HfErO films. The HfErO films have bad thermal stability as the crystallization temperature decreases from 900 to 800 C. After thermal annealing, cubic phase of HfO{sub 2} are stabilized, which is ascribed to the oxygen vacancies creation by the Er incorporation. The optical properties such as the refractive index and the optical band gap of the HfErO films are optimized by the VHF power. (orig.)

  3. The structure, surface topography and mechanical properties of Si-C-N films fabricated by RF and DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Shi Zhifeng, E-mail: scut0533@126.com [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China); Wang Yingjun, E-mail: imwangyj@163.com [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China); Du Chang [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China); Huang Nan [Key Lab. for Advanced Technologies of Materials, Ministry of Education, Southwest Jiaotong University, 610031 Chengdu (China); Wang Lin; Ning Chengyun [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China)

    2011-12-01

    Silicon carbon nitride thin films were deposited on Co-Cr alloy under varying deposition conditions such as sputtering power and the partial pressure ratio of N{sub 2} to Ar by radio frequency and direct current magnetron sputtering techniques. The chemical bonding configurations, surface topography and hardness were characterized by means of X-ray photoelectron spectroscopy, atomic force microscopy and nano-indentation technique. The sputtering power exhibited important influence on the film composition, chemical bonding configurations and surface topography, the electro-negativity had primary effects on chemical bonding configurations at low sputtering power. A progressive densification of the film microstructure occurring with the carbon fraction was increased. The films prepared by RF magnetron sputtering, the relative content of the Si-N bond in the films increased with the sputtering power increased, and Si-C and Si-Si were easily detachable, and C-O, N-N and N-O on the film volatile by ion bombardment which takes place very frequently during the film formation process. With the increase of sputtering power, the films became smoother and with finer particle growth. The hardness varied between 6 GPa and 11.23 GPa depending on the partial pressure ratio of N{sub 2} to Ar. The tribological characterization of Co-Cr alloy with Si-C-N coating sliding against UHMWPE counter-surface in fetal bovine serum, shows that the wear resistance of the Si-C-N coated Co-Cr alloy/UHMWPE sliding pair show much favourable improvement over that of uncoated Co-Cr alloy/UHMWPE sliding pair. This study is important for the development of advanced coatings with tailored mechanical and tribological properties.

  4. Microstructure, mechanical and tribological properties of TiMoN/Si{sub 3}N{sub 4} nano-multilayer films deposited by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Tao; Zhang, Guojun, E-mail: zhangguojun@xaut.edu.cn; Jiang, Bailing

    2015-01-30

    Highlights: • Structure and properties of TiMoN/Si{sub 3}N{sub 4} films dependent on the structure of Si{sub 3}N{sub 4}. • With increase of layer thickness, Si{sub 3}N{sub 4} changed from crystalline to amorphous state. • TiMoN/Si{sub 3}N{sub 4} films with crystalline Si{sub 3}N{sub 4} show higher hardness than MoN{sub x}/SiN{sub x} films. • TiMoN/Si{sub 3}N{sub 4} films all show lower COF than that of TiAlSiN/Si{sub 3}N{sub 4} films. - Abstract: TiMoN/Si{sub 3}N{sub 4} nano-multilayer films with different Si{sub 3}N{sub 4} layer thickness were synthesized using magnetron sputtering by changing the Si target current. The TiMoN/Si{sub 3}N{sub 4} nano-multilayer films exhibited strong microstructure and properties dependence on the structures of Si{sub 3}N{sub 4} layer. When Si{sub 3}N{sub 4} layer thickness (l{sub Si3N4}) was smaller than 0.8 nm, Si{sub 3}N{sub 4} layers maintained crystallization state, the as-deposited TiMoN/SiN{sub x} films exhibited much higher hardness and comparable coefficient of friction (COF) than that of MoN{sub x}/SiN{sub x} films. With the further increase of l{sub Si3N4}, Si{sub 3}N{sub 4} layer transformed to amorphous state, the hardness of TiMoN/Si{sub 3}N{sub 4} films decreased gradually from 29.9 to 20.1 GPa and COF increased from 0.55 to 0.72. It totally shows better tribological properties than TiAlSiN/Si{sub 3}N{sub 4} nano-multilayer films as a result of incorporating molybdenum nitride.

  5. Structural, optical and microwave dielectric studies of Co doped MgTiO3 thin films fabricated by RF magnetron sputtering

    Science.gov (United States)

    Santhosh Kumar, T.; Gogoi, Pallabi; Bhasaiah, S.; Raju, K. C. James; Pamu, D.

    2015-05-01

    We report the structural, optical, and microwave dielectric characteristics of (Mg0.95Co0.05)TiO3 (MCT) thin films deposited onto amorphous SiO2 (a-SiO2) substrates by RF magnetron sputtering for the first time. The role of the oxygen mixing percentage (OMP) on the growth, morphology, optical, and microwave dielectric properties of MCT thin films has been investigated. The as-deposited MCT films were x-ray amorphous and crystallined after annealing at 700 °C for 1 h in air. A preferred orientation of grains along the (110) direction has been observed with increasing OMP. Such a textured growth is explained by calculating the orientation factors from the Lotgering model. The dispersion in a refractive index with wavelength has been explained using a single oscillator dispersion model. Both the refractive index and bandgap of the films increases on annealing. The annealed films exhibit refractive indices in the range of 1.88-2.08 at 600 nm with an optical bandgap value between 3.95-4.16 eV. The increase in the refractive index is attributed to the improvement in packing density and crystallinity, and decrease in the porosity ratio, whereas the increase in bandgap is due to the decrease in intermediary energy levels within the optical bandgap. (Mg0.95Co0.05)TiO3 thin films exhibited a progressive increase in the dielectric properties with OMP and a maximum dielectric constant of ɛr = 17.3 and low loss (tanδ ˜ 1.1 × 10-3) at a spot frequency of 10 GHz for the films deposited at 75% OMP, beyond which they decreased. The improvement in dielectric properties with an increase in OMP has been correlated to the preferred orientation growth, reduction in oxygen vacancies, and strain. The prepared MCT thin films are suitable candidates for anti-reflection coatings and complementary metal-oxide semiconductor (CMOS) applications.

  6. Characterization of ultrathin Al{sub 2}O{sub 3} gate oxide deposited by RF-magnetron sputtering on gallium nitride epilayer on sapphire substrate

    Energy Technology Data Exchange (ETDEWEB)

    Quah, Hock Jin; Cheong, Kuan Yew, E-mail: ckuanyew@yahoo.com

    2014-12-15

    A systematic study was performed on Al{sub 2}O{sub 3} films RF-magnetron sputtered on GaN substrate and subjected to different post-deposition annealing (PDA) temperatures (200–800 °C) in oxygen ambient. The as-deposited Al{sub 2}O{sub 3} film and Al{sub 2}O{sub 3} films subjected to PDA at 200 and 400 °C were present in amorphous phase and therefore undetectable by X-ray diffraction. By further enhancing the PDA temperature (≥600 °C), a transformation from amorphous to polycrystalline phase of Al{sub 2}O{sub 3} happened. The increment of PDA temperature has contributed to an enhancement in leakage current density-electric field (J–E) characteristics of the investigated samples. A correlation between the acquired J–E characteristics with effective oxide charge, slow trap density, interface trap density, and total interface trap density were discussed. A detailed investigation on the conduction of charges through the as-deposited Al{sub 2}O{sub 3} gate and Al{sub 2}O{sub 3} gates subjected to different PDA temperatures via space-charge-limited conduction, Schottky emission, Poole–Frenkel emission, and Fowler–Nordheim tunneling were presented. - Highlights: • Post-deposition annealing (PDA) in oxygen ambient of Al{sub 2}O{sub 3} films deposited on GaN. • Formation of crystalline Al{sub 2}O{sub 3} films subjected to PDA at/beyond 600 °C. • J–E characteristics of Al{sub 2}O{sub 3}/GaN system are dependent on MOS characteristics. • Al{sub 2}O{sub 3}/GaN system was subjected to high temperature measurements. • Current conduction mechanisms governing the leakage current of Al{sub 2}O{sub 3}/GaN system.

  7. Influence of Oxygen Concentration on the Performance of Ultra-Thin RF Magnetron Sputter Deposited Indium Tin Oxide Films as a Top Electrode for Photovoltaic Devices

    Directory of Open Access Journals (Sweden)

    Jephias Gwamuri

    2016-01-01

    Full Text Available The opportunity for substantial efficiency enhancements of thin film hydrogenated amorphous silicon (a-Si:H solar photovoltaic (PV cells using plasmonic absorbers requires ultra-thin transparent conducting oxide top electrodes with low resistivity and high transmittances in the visible range of the electromagnetic spectrum. Fabricating ultra-thin indium tin oxide (ITO films (sub-50 nm using conventional methods has presented a number of challenges; however, a novel method involving chemical shaving of thicker (greater than 80 nm RF sputter deposited high-quality ITO films has been demonstrated. This study investigates the effect of oxygen concentration on the etch rates of RF sputter deposited ITO films to provide a detailed understanding of the interaction of all critical experimental parameters to help create even thinner layers to allow for more finely tune plasmonic resonances. ITO films were deposited on silicon substrates with a 98-nm, thermally grown oxide using RF magnetron sputtering with oxygen concentrations of 0, 0.4 and 1.0 sccm and annealed at 300 °C air ambient. Then the films were etched using a combination of water and hydrochloric and nitric acids for 1, 3, 5 and 8 min at room temperature. In-between each etching process cycle, the films were characterized by X-ray diffraction, atomic force microscopy, Raman Spectroscopy, 4-point probe (electrical conductivity, and variable angle spectroscopic ellipsometry. All the films were polycrystalline in nature and highly oriented along the (222 reflection. Ultra-thin ITO films with record low resistivity values (as low as 5.83 × 10−4 Ω·cm were obtained and high optical transparency is exhibited in the 300–1000 nm wavelength region for all the ITO films. The etch rate, preferred crystal lattice growth plane, d-spacing and lattice distortion were also observed to be highly dependent on the nature of growth environment for RF sputter deposited ITO films. The structural, electrical

  8. Effect of post annealing on structural, optical and dielectric properties of MgTiO{sub 3} thin films deposited by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Santhosh Kumar, T.; Bhuyan, R.K. [Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039 (India); Pamu, D., E-mail: pamu@iitg.ernet.in [Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039 (India)

    2013-01-01

    Highlights: Black-Right-Pointing-Pointer MgTiO{sub 3} thin films were grown on quartz and Pt-Si substrates by RF sputtering and MIM capacitors were fabricated at different O{sub 2}%. Black-Right-Pointing-Pointer The sputtering target was prepared by mechanical alloying for the first time. Black-Right-Pointing-Pointer The effect of annealing and O{sub 2}% on structural, microstructural, optical and dielectric properties was studied systematically. Black-Right-Pointing-Pointer The increase in the refractive index and bandgap on annealing can be attributed to the improvement in packing density and crystallinity. Black-Right-Pointing-Pointer The improvement in the dielectric properties is attributed to the increase in crystallinity and reduction in oxygen vacancies. - Abstract: MgTiO{sub 3} (MTO) thin films have been deposited on to quartz and platinized silicon (Pt/TiO{sub 2}/SiO{sub 2}/Si) substrates by RF magnetron sputtering. The metal-MTO-metal (Ag-MTO-Pt/TiO{sub 2}/SiO{sub 2}/Si) thin film capacitors have been fabricated at different oxygen mixing percentage (OMP). The effects of OMP and post annealing on the structural, microstructural, optical and dielectric properties of MTO films were studied. The MTO target has been synthesized by mechanochemical synthesis method. The phase purity of the sputtering target was confirmed from X-ray diffraction pattern and refined to R3{sup Macron} space group with lattice parameters a = b = 5.0557(12) Angstrom-Sign , c = 13.9003(9) Angstrom-Sign . The chemical composition of the deposited films was confirmed from EDS spectra and all the films exhibited the composition of the sputtering target. The XRD patterns of the as-deposited films are amorphous and annealing at 700 Degree-Sign C for 1 h induced nanocrystallinity with the improved optical and dielectric properties. The annealed films exhibit refractive index in the range of 2.12-2.19 at 600 nm with an optical bandgap value in between 4.11 and 4.19 eV. The increase in the

  9. Reactive magnetron sputter deposited CN{sub {ital x}}: Effects of N{sub 2} pressure and growth temperature on film composition, bonding, and microstructure

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, W.T.; Sjoestroem, H.; Ivanov, I.; Xing, K.Z.; Broitman, E.; Salaneck, W.R.; Greene, J.E.; Sundgren, J. [Department of Physics, Linkoeping University, S-581 83 Linkoeping (Sweden)

    1996-09-01

    Effects of growth processes on chemical bond structure, microstructure, and mechanical properties of carbon-nitride (CN{sub {ital x}}) thin films, deposited by reactive magnetron sputtering in a pure N{sub 2} discharge, are reported. The film deposition rate {ital R}{sub {ital D}} increases with increasing N{sub 2} pressure {ital P}{sub N{sub 2}} while N/C ratios remain constant. Maximum N concentration was {approximately}35 at.%. {ital R}{sub {ital D}} was found to be dependent upon the film growth temperature {ital T}{sub {ital s}}. For a given {ital P}{sub N{sub 2}}, {ital R}{sub {ital D}} decreased slightly as {ital T}{sub {ital s}} was increased from 100 to 600 C. The variations in {ital R}{sub {ital D}} with both {ital P}{sub N{sub 2}} and {ital T}{sub {ital s}} can be explained by ion-induced desorption of cyano radicals CN{sub {ital x}} from both the target and growth surfaces during deposition. X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy (FTIR) analyses showed that N atoms in films grown at {ital T}{sub {ital s}}{approx_gt}350{degree}C with low nitrogen partial pressures {ital P}{sub N{sub 2}}, {approximately}2.5 mTorr, were bound to C atoms through hybridized {ital sp}{sup 2} and {ital sp}{sup 3} configurations. For low {ital T}{sub {ital s}}=100{degree}C and higher {ital P}{sub N{sub 2}}, 10 mTorr, triple-bonded C{equivalent_to}N was detected by FTIR. Two types of microstructures were observed by high-resolution transmission electron microscopy, depending on {ital T}{sub {ital s}}: an amorphous phase, containing crystalline clusters for films deposited at {ital T}{sub {ital s}}=100{degree}C, while a turbostraticlike or fullerenelike phase was observed for films deposited at {ital T}{sub {ital s}}{approx_gt}200{degree}C CN{sub {ital x}} films deposited a higher {ital T}{sub {ital s}} and lower {ital P}{sub N{sub 2}} were found to have higher hardness and elastic modulus. {copyright} {ital 1996 American Vacuum Society}

  10. Magnetic and Optical Properties of the TiO2-Co-TiO2 Composite Films Grown by Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    LIU Fa-min; DING Peng; SHI Wei-mei; WANG Tian-min

    2007-01-01

    The TiO2-Co-TiO2 sandwich films were successfully grown on glass and silicon substrata making alternate use of radio frequency reactive magnetron sputtering and direct current magnetron sputtering. The structures and properties of these films were identified with X-ray diffraction (XRD), Raman spectra and X-ray photoemission spectra (XPS). It is shown that the sandwich film consists of two anatase TiO2 films with an embedded Co nano-film. The fact that, when the Co nano-film thickens, varied red shifts appear in optical absorption spectra may well be explained by the quantum confinement and tunnel effects. As for magnetic properties, the saturation magnetization, remnant magnetic induction and coercivity vary with the thickness of the Co nano-films. Moreover, the Co nano-film has a critical thickness of about 8.6 nm, which makes the coercivity of the composite film reach the maximum of about 1413 Oe.

  11. Characterization of DC magnetron sputtering deposited thin films of TiN for SBN/MgO/TiN/Si structural waveguide

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Optimal parameters for depositing Titanium nitride (TiN) thin films by DC reactive magnetron sputtering were determined. TiN thin films were deposited on Si (100) substrates by DC reactive magnetron sputtering, at different temperatures,different electrical current values, and different N2/Ar ratios. Structural characteristics of TiN thin films were measured by X-ray diffraction (XRD); surface morphology of the thin films was characterized using an atomic force microscope (AFM). The electric resistivity of the TiN films was measured by a four-point probe. In the result, temperature is 500 ℃, electrical current value is 1.6 A, pure N2 is the reacting gas, TiN thin film has the preferred (200) orientation, resistance is small enough for its use as bottom electrodes.

  12. Investigations on the growth of manifold morphologies and optical properties of ZnO nanostructures grown by radio frequency magnetron sputtering

    OpenAIRE

    2013-01-01

    The growth of ZnO nanostructures under various combinations of argon and oxygen pressures by radio frequency magnetron sputtering has been reported. The anisotropic transformation of nanostructures from the vertical standing nanorods to self branched lateral nanowires has been observed due to the change in the migration length of the adatoms owing to the deposition pressure and temperature. A dominant (002) reflection having narrow full width at half maximum of the vertical standing nanorods ...

  13. Fabrication and characterization of He-charged ODS-FeCrNi films deposited by a radio-frequency plasma magnetron sputtering technique

    Science.gov (United States)

    Liang, SONG; Xianping, WANG; Le, WANG; Ying, ZHANG; Wang, LIU; Weibing, JIANG; Tao, ZHANG; Qianfeng, FANG; Changsong, LIU

    2017-04-01

    He-charged oxide dispersion strengthened (ODS) FeCrNi films were prepared by a radio-frequency (RF) plasma magnetron sputtering method in a He and Ar mixed atmosphere at 150 °C. As a comparison, He-charged FeCrNi films were also fabricated at the same conditions through direct current (DC) plasma magnetron sputtering. The doping of He atoms and Y2O3 in the FeCrNi films was realized by the high backscattered rate of He ions and Y2O3/FeCrNi composite target sputtering method, respectively. Inductive coupled plasma (ICP) and x-ray photoelectron spectroscopy (XPS) analysis confirmed the existence of Y2O3 in FeCrNi films, and Y2O3 content hardly changed with sputtering He/Ar ratio. Cross-sectional scanning electron microscopy (SEM) shows that the FeCrNi films were composed of dense columnar nanocrystallines and the thickness of the films was obviously dependent on He/Ar ratio. Nanoindentation measurements revealed that the FeCrNi films fabricated through DC/RF plasma magnetron sputtering methods exhibited similar hardness values at each He/Ar ratio, while the dispersion of Y2O3 apparently increased the hardness of the films. Elastic recoil detection (ERD) showed that DC/RF magnetron sputtered FeCrNi films contained similar He amounts (∼17 at.%). Compared with the minimal change of He level with depth in DC-sputtered films, the He amount decreases gradually in depth in the RF-sputtered films. The Y2O3-doped FeCrNi films were shown to exhibit much smaller amounts of He owing to the lower backscattering possibility of Y2O3 and the inhibition effect of nano-sized Y2O3 particles on the He element.

  14. Hybrid biocomposite with a tunable antibacterial activity and bioactivity based on RF magnetron sputter deposited coating and silver nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Ivanova, A.A. [Department of Theoretical and Experimental Physics, Center of Technology, National Research Tomsk Polytechnic University, 634050 Tomsk (Russian Federation); Surmenev, R.A., E-mail: rsurmenev@gmail.com [Department of Theoretical and Experimental Physics, Center of Technology, National Research Tomsk Polytechnic University, 634050 Tomsk (Russian Federation); Fraunhofer Institute for Interfacial Engineering and Biotechnology IGB, 70569 Stuttgart (Germany); Surmeneva, M.A.; Mukhametkaliyev, T. [Department of Theoretical and Experimental Physics, Center of Technology, National Research Tomsk Polytechnic University, 634050 Tomsk (Russian Federation); Loza, K.; Prymak, O.; Epple, M. [Inorganic Chemistry and Center for Nanointegration Duisburg-Essen (CeNIDE), University of Duisburg-Essen, 45117 Essen (Germany)

    2015-02-28

    Highlights: • A biocomposite of hydroxyapatite film and silver nanoparticles (AgNPs) was tested. • The concentration of the released silver in phosphate or acetate buffer was studied. • The concentration and release rate of AgNPs can be controlled in a tailored manner. - Abstract: In this work, we describe fabrication techniques used to prepare a multifunctional biocomposite based on a hydroxyapatite (HA) coating and silver nanoparticles (AgNPs). AgNPs synthesized by a wet chemical reduction method were deposited on Ti substrates using a dripping/drying method followed by deposition of calcium phosphate (CaP) coating via radio-frequency (RF) magnetron sputter-deposition. The negatively charged silver nanoparticles (zeta potential −21 mV) have a spherical shape with a metallic core diameter of 50 ± 20 nm. The HA coating was deposited as a dense nanocrystalline film over a surface of AgNPs. The RF-magnetron sputter deposition of HA films on the AgNPs layer did not affect the initial content of AgNPs on the substrate surface as well as NPs size and shape. SEM cross-sectional images taken using the backscattering mode revealed a homogeneous layer of AgNPs under the CaP layer. The diffraction patterns from the coatings revealed reflexes of crystalline HA and silver. The concentration of Ag ions released from the biocomposites after 7 days of immersion in phosphate and acetate buffers was estimated. The obtained results revealed that the amount of silver in the solutions was 0.27 ± 0.02 μg mL{sup −1} and 0.54 ± 0.02 μg mL{sup −1} for the phosphate and acetate buffers, respectively, which corresponded well with the minimum inhibitory concentration range known for silver ions in literature. Thus, this work establishes a new route to prepare a biocompatible layer using embedded AgNPs to achieve a local antibacterial effect.

  15. A global plasma model for reactive deposition of compound films by modulated pulsed power magnetron sputtering discharges

    Science.gov (United States)

    Zheng, B. C.; Wu, Z. L.; Wu, B.; Li, Y. G.; Lei, M. K.

    2017-05-01

    A spatially averaged, time-dependent global plasma model has been developed to describe the reactive deposition of a TiAlSiN thin film by modulated pulsed power magnetron sputtering (MPPMS) discharges in Ar/N2 mixture gas, based on the particle balance and the energy balance in the ionization region, and considering the formation and erosion of the compound at the target surface. The modeling results show that, with increasing the N2 partial pressure from 0% to 40% at a constant working pressure of 0.3 Pa, the electron temperature during the strongly ionized period increases from 4 to 7 eV and the effective power transfer coefficient, which represents the power fraction that effectively heats the electrons and maintains the discharge, increases from about 4% to 7%; with increasing the working pressure from 0.1 to 0.7 Pa at a constant N2 partial pressure of 25%, the electron temperature decreases from 10 to 4 eV and the effective power transfer coefficient decreases from 8% to 5%. Using the modeled plasma parameters to evaluate the kinetic energy of arriving ions, the ion-to-neutral flux ratio of deposited species, and the substrate heating, the variations of process parameters that increase these values lead to an enhanced adatom mobility at the target surface and an increased input energy to the substrate, corresponding to the experimental observation of surface roughness reduction, the microstructure transition from the columnar structure to the dense featureless structure, and the enhancement of phase separation. At higher N2 partial pressure or lower working pressure, the modeling results demonstrate an increase in electron temperature, which shifts the discharge balance of Ti species from Ti+ to Ti2+ and results in a higher return fraction of Ti species, corresponding to the higher Al/Ti ratio of deposited films at these conditions. The modeling results are well correlated with the experimental observation of the composition variation and the microstructure

  16. Growth evolution of self-textured ZnO films deposited by magnetron sputtering at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Bortoleto, J.R.R., E-mail: jrborto@sorocaba.unesp.br [Technological Plasmas Laboratory, São Paulo State University-UNESP, Av. Três de Março, 511, Sorocaba, SP (Brazil); Chaves, M. [Technological Plasmas Laboratory, São Paulo State University-UNESP, Av. Três de Março, 511, Sorocaba, SP (Brazil); Rosa, A.M. [School of Electrical and Computer Engineering, University of Campinas-UNICAMP, Av. Albert Einstein, Campinas, SP (Brazil); Silva, E.P. da; Durrant, S.F. [Technological Plasmas Laboratory, São Paulo State University-UNESP, Av. Três de Março, 511, Sorocaba, SP (Brazil); Trino, L.D.; Lisboa-Filho, P.N. [Group of Advanced Materials, São Paulo State University-UNESP, Av. Eng. Luiz Edmundo Carrijo Coube, 14-01, Bauru, SP (Brazil)

    2015-04-15

    Highlights: • Zinc oxide thin films were prepared using reactive RF magnetron sputtering. • The surface topography was examined using atomic force microscopy (AFM). • Shadowing and surface diffusion, as well as facet stabilization, are key mechanisms in the production of the final texture at 100 °C. • For the films grown at 250 °C, structural misorientation during growth also plays an important role. - Abstract: In this work, the evolution of the surface morphology of ZnO thin films deposited by reactive RF magnetron sputtering has been investigated using atomic force microscopy (AFM) and X-ray diffraction (XRD). All AFM images of the films were analyzed using scaling concepts. To study the growth evolution, different ZnO films with thicknesses of up to 1270 nm were deposited at temperatures of 100 and 250 °C. For the films grown at 100 °C, AFM data show that the lateral length ξ evolves continuously while the temporal evolution of the root mean square roughness σ presents two distinct regimes. Early during the depositions, the morphology of the ZnO films is mainly characterized by granular structures. Beyond thickness of about 600 nm, pyramid-like structures with {214} crystallographic facets start to develop. For the films grown at 250 °C, however, only one growth regime was observed and for the thicker films, the surface morphology consisted of polygonal structures. For the films grown at 100 °C, the growth exponents, β, and the exponent defining the evolution of the characteristic wavelength of the surface, p, were β{sub 1} = 0.70 ± 0.02 and β{sub 2} = 0.26 ± 0.2; and p = 0.2 ± 0.04. For the films grown at 250 °C, the exponent values were β = 0.78 ± 0.02 and p = 0.32 ± 0.05. These values of the exponents indicate the occurrence of surface mechanisms, such as shadowing and surface diffusion, as well as facet stabilization at 100 °C. For the films grown at 250 °C, however, structural misorientation during growth also plays an important

  17. Thermoelectric properties of Al-doped Mg{sub 2}Si thin films deposited by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Zhi-jian; Zhou, Bai-yang, E-mail: zby_112921@163.com; Li, Jian-xin; Wen, Cui-lian, E-mail: clwen@fzu.edu.cn

    2016-11-15

    Highlights: • The thin films were fabricated by two-target alternative magnetron sputtering. • The maximum power factor of Al-doped Mg{sub 2}Si thin film we obtained is 3.8 mW m{sup −1} k{sup −2}. • A proper Al dopant can enhance the thermoelectric properties of Mg{sub 2}Si thin films. • Low-dimensional technique can enhance thermoelectric performance effectively. - Abstract: The Al-doped Mg{sub 2}Si thin films were fabricated by two-target alternative magnetron sputtering technique, and the influences of different Al doping contents on the thermoelectric properties of Al-doped Mg{sub 2}Si thin films were investigated. The compositions, crystal structures, electronic transport properties and thermoelectric properties of the thin films were examined using energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), Hall coefficient measurement and Seebeck coefficient measurement system, respectively. The EDS results show that the thin films doped with Al target sputtering power of 30 W, 60 W and 90 W have the Al content of 0.68 at.%, 1.56 at.% and 2.85 at.%, respectively. XRD results indicate that the diffraction peaks of Mg{sub 2}Si become stronger with increasing Al dopant. The results of Hall coefficient measurement and Seebeck coefficient measurement system reveal that all the samples are n-type. The conductivities of Al-doped Mg{sub 2}Si thin films are significantly greater than that of undoped Mg{sub 2}Si thin film, and increase with increasing Al doping content. With the increase of temperature, the absolute value of the Seebeck coefficients of Mg{sub 2}Si base thin films increase firstly and then decrease. The maximum power factor obtained is 3.8 mW m{sup −1} k{sup −2} for 1.56 at.% Al-doped Mg{sub 2}Si thin film at 573 K.

  18. Comparison of hydrophilic properties of TiO{sub 2} thin films prepared by sol-gel method and reactive magnetron sputtering system

    Energy Technology Data Exchange (ETDEWEB)

    Nam, S.-H., E-mail: askaever@skku.edu [Department of Chemistry, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Cho, S.-J.; Jung, C.-K. [Department of Chemistry, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Boo, J.-H., E-mail: jhboo@skku.edu [Department of Chemistry, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Sicha, J.; Herman, D.; Musil, J.; Vlcek, J. [Department of Physics, University of West Bohemia, Univerzitni 22, 306 14 Plzen (Czech Republic)

    2011-08-01

    This article reports on preparation, characterization and comparison of TiO{sub 2} films prepared by sol-gel method using the titanium isopropoxide sol (TiO{sub 2} coating sol 3%) as solvent precursor and reactive magnetron sputtering from substoichiometric TiO{sub 2-x} targets of 50 mm in diameter. Dual magnetron supplied by dc bipolar pulsed power source was used for reactive magnetron sputtering. Depositions were performed on unheated glass substrates. Comparison of photocatalytic properties was based on measurements of hydrophilicity, i.e. evaluation of water contact angle on the film surface after UV irradiation. It is shown, that TiO{sub 2} films prepared by the sol-gel method exhibited higher hydrophilicity in the as-deposited state but has significant deterioration of hydrophilicity during aging, compared to TiO{sub 2} films prepared by magnetron sputtering. To explain this effect AFM, SEM and high resolution XPS measurements were performed. It is shown that the deterioration of hydrophilicity of sol-gel TiO{sub 2} films can be suppressed if as-deposited films are exposed to the plasma of microwave oxygen discharge.

  19. Optical and Electrical Properties of the Different Magnetron Sputter Power 300°C Deposited -ZnO Thin Films and Applications in p-i-n -Si:H Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Fang-Hsing Wang

    2013-01-01

    Full Text Available A compound of ZnO with 3 wt% Ga2O3 (ZnO : Ga2O3 = 97 : 3 in wt%, GZO was sintered at C as a target. The GZO thin films were deposited on glass using a radio frequency magnetron sputtering system at C by changing the deposition power from 50 W to 150 W. The effects of deposition power on the crystallization size, lattice constant (c, resistivity, carrier concentration, carrier mobility, and optical transmission rate of the GZO thin films were studied. The blue shift in the transmission spectrum of the GZO thin films was found to change with the variations of the carrier concentration because of the Burstein-Moss shifting effect. The variations in the optical band gap ( value of the GZO thin films were evaluated from the plots of , revealing that the measured value decreased with increasing deposition power. As compared with the results deposited at room temperature by Gong et al., (2010 the C deposited GZO thin films had apparent blue shift in the transmission spectrum and larger value. For the deposited GZO thin films, both the carrier concentration and mobility linearly decreased and the resistivity linearly increased with increasing deposition power. The prepared GZO thin films were also used as transparent electrodes to fabricate the amorphous silicon thin-film solar cells, and their properties were also measured.

  20. Effect of rf power on the properties of rf magnetron sputtered ZnO:Al thin films

    Energy Technology Data Exchange (ETDEWEB)

    Saad, M., E-mail: pscientific@aec.org.sy [Atomic Energy Commission of Syria, P.O. Box 6091, Damascus (Syrian Arab Republic); Kassis, A. [Atomic Energy Commission of Syria, P.O. Box 6091, Damascus (Syrian Arab Republic)

    2012-09-14

    Aluminum doped zinc oxide ZnO:Al thin films were prepared using rf magnetron sputtering. The preparation was performed at room temperature and low pressure with varying rf power between P = 50 W and P = 500 W. Structural, electrical and optical film properties were studied depending on rf power. Special attention was paid to correlations among film structure, sheet resistance and optical transmission. Films with largest crystallite size exhibited highest optical transmission, but not lowest electrical resistivity. An explanation for this finding was sought in terms of the amount of Al atoms incorporated in the films and the places they occupy, parameters which are in turn related to rf power. -- Highlights: Black-Right-Pointing-Pointer Al-doped ZnO thin films were prepared by rf sputtering depending on rf power. Black-Right-Pointing-Pointer Films with largest crystallite size exhibited highest optical transmission. Black-Right-Pointing-Pointer These films did not exhibit lowest electrical resistivity! Black-Right-Pointing-Pointer Resistivity was more correlated with interplanar spacing than with crystallite size. Black-Right-Pointing-Pointer The incorporation of Al atoms and the places they occupy may explain this behavior.

  1. Composition and morphology of metal-containing diamond-like carbon films obtained by reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Corbella, C. [FEMAN Group, Departament de Fisica Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, E08028 Barcelona (Spain)]. E-mail: corbella@ub.edu; Pascual, E. [FEMAN Group, Departament de Fisica Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, E08028 Barcelona (Spain); Oncins, G. [Serveis Cientificotecnics, Universitat de Barcelona, PCB, c/ Josep Samitier 1-5, E08028 Barcelona (Spain); Canal, C. [Departamento de Tecnologia de Tensioactivos IQAB-CSIC, c/ Jordi Girona 18-26, E08034 Barcelona (Spain); Andujar, J.L. [FEMAN Group, Departament de Fisica Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, E08028 Barcelona (Spain); Bertran, E. [FEMAN Group, Departament de Fisica Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, E08028 Barcelona (Spain)

    2005-06-22

    The addition of metal atoms within the matrix of diamond-like carbon films leads to the improvement of their mechanical properties. The present paper discusses the relationship between the composition and morphology of metal-containing (W, Nb, Mo, Ti) diamond-like carbon thin films deposited at room temperature by reactive magnetron sputtering from a metal target in an argon and methane atmosphere. Composition was measured either by electron microprobe technique or by X-ray photoelectron spectroscopy and shows a smooth variation with relative methane flow. High relative methane flows lead to a bulk saturation of carbon atoms, which leads to a lack of homogeneity in the films as confirmed by secondary ion mass spectrometry. Cross-section micrographs were observed by transmission electron microscopy and revealed a structure strongly influenced by the metal inserted and its abundance. The surface pattern obtained by scanning electrochemical potential microscopy provided the metallicity distribution. These measurements were completed with atomic force microscopy of the surface. Selected area electron diffraction and X-ray diffraction measurements provided data of the crystalline structure along with nano-crystallite size. High-resolution transmission electron microscopy provided images of these crystallites.

  2. Electron-Induced Secondary Electron Emission Properties of MgO/Au Composite Thin Film Prepared by Magnetron Sputtering

    Science.gov (United States)

    Li, Jie; Hu, Wenbo; Wei, Qiang; Wu, Shengli; Hua, Xing; Zhang, Jintao

    2016-12-01

    As a type of electron-induced secondary electron emitter, MgO/Au composite thin film was prepared by reactive magnetron sputtering of individual Mg target and Au target, and the effects of key process parameters on its surface morphology and secondary electron emission (SEE) properties were investigated. It is found that to deposit a NiO buffer layer on the substrate is conducive to the subsequent growth of MgO grains owing to the lattice matching. The gold addition can raise the electrical conductivity of MgO film and further suppress the surface charging. However, the gold deposition would interfere with the MgO crystallization and increase the surface roughness of MgO/Au film. Therefore, MgO/Au composite thin film with a NiO buffer layer and proper deposition times of MgO and Au can achieve superior SEE properties due to good MgO crystallization, low surface roughness and reasonable electrical conductivity. The optimized MgO/Au composite thin film has a higher SEE coefficient and a lower 1-h SEE degradation rate under electron beam bombardment in comparison with MgO film.

  3. High temperature oxidation resistance of magnetron-sputtered homogeneous CrAlON coatings on 430 steel

    Science.gov (United States)

    Garratt, E.; Wickey, K. J.; Nandasiri, M. I.; Moore, A.; AlFaify, S.; Gao, X.; Kayani, A.; Smith, R. J.; Buchanan, T. L.; Priyantha, W.; Kopczyk, M.; Gannon, P. E.

    2009-11-01

    The requirements of low cost and high-temperature corrosion resistance for bipolar interconnect plates in solid oxide fuel cell stacks has directed attention to the use of metal plates with oxidation resistant coatings. We have investigated the performance of steel plates with homogenous coatings of CrAlON (oxynitrides). The coatings were deposited using RF magnetron sputtering, with Ar as a sputtering gas. Oxygen in these coatings was not intentionally added. Oxygen might have come through contaminated nitrogen gas bottle, leak in the chamber or from the partial pressure of water vapors. Nitrogen was added during the growth process to get oxynitride coating. The Cr/Al composition ratio in the coatings was varied in a combinatorial approach. The coatings were subsequently annealed in air for up to 25 hours at 800 oC. The composition of the coated plates and the rate of oxidation were characterized using Rutherford backscattering (RBS) and nuclear reaction analysis (NRA). Surface characterization was carried out using Atomic Force Microscopy (AFM) and surfaces of the coatings were found smooth on submicron scale. From our results, we conclude that Al rich coatings are more susceptible to oxidation than Cr rich coatings.

  4. High Temperature Thermal Stability and Oxidation Resistance of Magnetron-sputtered Homogeneous CrAlON Coatings on 430 Steel

    Science.gov (United States)

    Kayani, A.; Wickey, K. J.; Nandasiri, M. I.; Moore, A.; Garratt, E.; AlFaify, S.; Gao, X.; Smith, R. J.; Buchanan, T. L.; Priyantha, W.; Kopczyk, M.; Gannon, P. E.; Gorokhovsky, V. I.

    2009-03-01

    The requirements of low cost and high-temperature corrosion resistance for bipolar interconnect plates in solid oxide fuel cell stacks has directed attention to the use of metal plates with oxidation resistant coatings. We have investigated the performance of steel plates with homogenous coatings of CrAlON (oxynitrides). The coatings were deposited using RF magnetron sputtering, with Ar as a sputtering gas. Oxygen in these coatings was not intentionally added. Oxygen might have come through contaminated nitrogen gas bottle, leak in the chamber or from the partial pressure of water vapors. Nitrogen was added during the growth process to get oxynitride coating. The Cr/Al composition ratio in the coatings was varied in a combinatorial approach. The coatings were subsequently annealed in air for up to 25 hours at 800° C. The composition of the coated plates and the rate of oxidation were characterized using Rutherford backscattering (RBS) and nuclear reaction analysis (NRA). From our results, we conclude that Al rich coatings are more susceptible to oxidation than Cr rich coatings.

  5. Energy flux to substrate in high-power impulse magnetron sputtering measured by using optical low-coherence interferometry

    Science.gov (United States)

    Hattori, Katsuhiro; Ohta, Takayuki; Oda, Akinori; Kousaka, Hiroyuki; Ito, Masafumi

    2016-09-01

    The substrate during the plasma irradiation is heated by charged species, neutral species, and the heat radiation and the substrate temperature is determined by energy flux to the substrate. High-power impulse magnetron sputtering (HiPIMS) using short-pulse high-voltage promotes the ionization of sputtered atoms and realizes high density plasma. In this study, we measured the silicon substrate temperature with non-contact type substrate temperature measurement method using optical low-coherence interferometry(LCI) and elucidated the heating mechanisms of the substrate temperature in HiPIMS. The target material was Ti and the distance between the substrate and the target was 60mm. Ar is used as the sputtering gas. The pulse width was from 50 to 300 µsec, the pulse frequency was from 100 to 500Hz. Applied voltages were changed to be from -400V to -900V. Measurement accuracy of contact-type thermocouples and that of noncontact-type LCI were within 2 degree C and 0.7 degree C, respectively. The heat influx to the substrate was calculated from the temporal variation of substrate temperature base on the energy balance equation and increased with increasing applied voltage. The emission intensity of Ti ion increased with increasing applied voltage even though that of Ti atom was constant. These results suggested that main contribution of substrate heating is Ti ion bombardment.

  6. Effects of discharge power on the structural and optical properties of TGZO thin films prepared by RF magnetron sputtering technique

    Science.gov (United States)

    Gu, Jin-hua; Lu, Zhou; Zhong, Zhi-you; Long, Lu; Long, Hao

    2016-05-01

    The transparent semiconductors of Ti and Ga-incorporated ZnO (TGZO) thin films were prepared by radio frequency (RF) magnetron sputtering onto glass substrates. The effects of discharge power on the physical properties of thin films are studied. Experimental results show that all nanocrystalline TGZO thin films possess preferential orientation along the (002) plane. The discharge power significantly affects the crystal structure and optical properties of thin films. When the discharge power is 200 W, the TGZO thin film has the optimal crystalline quality and optical properties, with the narrowest full width at half-maximum ( FWHM) of 1.76×10-3 rad, the largest average grain size of 82.4 nm and the highest average transmittance of 84.3% in the visible range. The optical gaps of thin films are estimated by the Tauc's relation and observed to increase firstly and then decrease with the increase of the discharge power. In addition, the optical parameters, including refractive index, extinction coefficient, dielectric function and dissipation factor of the thin films, are determined by optical characterization methods. The dispersion behavior of the refractive index is also analyzed using the Sellmeier's dispersion model.

  7. Physical and chemical characterization of Ag-doped Ti coatings produced by magnetron sputtering of modular targets

    Energy Technology Data Exchange (ETDEWEB)

    Schmitz, Tobias [Department for Functional Materials in Medicine and Dentistry, School of Dentistry, University of Würzburg, Pleicherwall 2, 97070 Würzburg (Germany); Institute of Tissue Engineering and Regenerative Medicine, University Hospital of the Julius-Maximilians University, Röntgenring 11, 97070 Würzburg (Germany); Warmuth, Franziska [Department for Functional Materials in Medicine and Dentistry, School of Dentistry, University of Würzburg, Pleicherwall 2, 97070 Würzburg (Germany); Werner, Ewald; Hertl, Cornelia [Institute of Materials Science and Mechanics of Materials, Technical University of Munich, Boltzmannstrasse 15, 85748 Garching (Germany); Groll, Jürgen; Gbureck, Uwe [Department for Functional Materials in Medicine and Dentistry, School of Dentistry, University of Würzburg, Pleicherwall 2, 97070 Würzburg (Germany); Moseke, Claus, E-mail: claus.moseke@fmz.uni-wuerzburg.de [Department for Functional Materials in Medicine and Dentistry, School of Dentistry, University of Würzburg, Pleicherwall 2, 97070 Würzburg (Germany)

    2014-11-01

    Silver-doped Ti films were produced using a single magnetron sputtering source equipped with a titanium target containing implemented silver modules under variation of bias voltage and substrate temperature. The Ti(Ag) films were characterized regarding their morphology, contact angle, phase composition, silver content and distribution as well as the elution of Ag{sup +} ions into cell media. SEM and AFM pictures showed that substrate heating during film deposition supported the formation of even and dense surface layers with small roughness values, an effect that could even be enforced, when a substrate bias voltage was applied instead. The deposition of both Ti and Ag was confirmed by X-ray diffraction. ICP-MS and EDX showed a clear correlation between the applied sputtering parameters and the silver content of the coatings. Surface-sensitive XPS measurements revealed that higher substrate temperatures led to an accumulation of Ag in the near-surface region, while the application of a bias voltage had the opposite effect. Additional elution measurements using ICP-MS showed that the release kinetics depended on the amount of silver located at the film surface and hence could be tailored by variation of the sputter parameters. - Highlights: • Modular targets were used to deposit Ti(Ag) films. • Ag-content is adjustable by bias voltage, sputtering power and substrate temperature. • Coating parameters significantly change film morphology and roughness. • A critical parameter for Ag release is the fraction of silver on the film surface.

  8. Optical and chemical properties of mixed-valent rhenium oxide films synthesized by reactive DC magnetron sputtering

    Science.gov (United States)

    Murphy, Neil R.; Gallagher, Regina C.; Sun, Lirong; Jones, John G.; Grant, John T.

    2015-07-01

    Mixed-valent rhenium oxide thin films were deposited using reactive magnetron sputtering employing a metallic rhenium target within an oxygen-argon environment. The oxygen and argon flow rates were systematically varied, while the extinction coefficient, k, of the deposited layers was monitored using in situ spectroscopic ellipsometry. In situ monitoring was used to identify absorption features specific to ReO3, namely, the minimization of k brought on by the gap between interband absorption features in the UV at 310 nm and the onset of free electron absorption at wavelengths above 540 nm. Based on these results, oxygen flow ratios of 50% and 60% were shown to produce films having optical properties characteristic of ReO3, and thus, were selected for detailed ex situ characterization. Chemical analysis via X-ray photoelectron spectroscopy confirmed that all films consisted largely of ReO3, but had some contributions from Re2O3, ReO2 and Re2O7. Additional monitoring of the chemistry, as a function of environmental exposure time, indicated a correlation between structural instability and the presence of Re2O3 and Re2O7 in the films.