Sample records for gan single crystals
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Atomic structures and mechanical properties of single-crystal GaN nanotubes
International Nuclear Information System (INIS)
Xu, B.; Lu, A.J.; Pan, B.C.; Yu, Q.X.
2005-01-01
An approach is proposed to theoretically construct a realistic single-crystal GaN nanotube at atomic scale. The generated atomic structures of the single-crystal GaN nanotubes match the structural aspects from experiment very well. Our energetic calculations show that a single-crystal GaN nanotube with [100]-oriented lateral facets is more stable than that with [110]-oriented lateral facets, when they have around the same wall thickness. For a specified orientation of the lateral facets on the single-crystal GaN nanotubes, the energetic stabilities of the tubes obey a P rule, in which P is the ratio of the number of four-coordinated atoms to the number of three-coordinated atoms. Furthermore, the Young's modulus of the considered GaN nanotubes decrease with increasing the ratio of the number of bulk atoms to the number of surface atoms in each type of tube. Our calculations and analysis demonstrate that the surface effect of a single-crystal nanotube enhances its Young's modulus significantly
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Induced defects in neutron irradiated GaN single crystals
International Nuclear Information System (INIS)
Park, I. W.; Koh, E. K.; Kim, Y. M.; Choh, S. H.; Park, S. S.; Kim, B. G.; Sohn, J. M.
2005-01-01
The local structure of defects in undoped, Si-doped, and neutron irradiated free standing GaN bulk crystals, grown by hydride vapor phase epitaxy, has been investigated by employing Raman scattering and cathodoluminescence. The GaN samples were irradiated to a dose of 2 x 10 17 neutrons in an atomic reactor at Korea Atomic Energy Research Institute. There was no appreciable change in the Raman spectra for undoped GaN samples before and after neutron irradiation. However, a forbidden transition, A 1 (TO) mode, appeared for a neutron irradiated Si-doped GaN crystal. Cathodoluminescence spectrum for the neutron irradiated Si-doped GaN crystal became much more broadened than that for the unirradiated one. The experimental results reveal the generation of defects with locally deformed structure in the wurtzite Si-doped GaN single crystal
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Growth of GaN single crystals by a Ca- and Ba-added Na flux method
Ukegawa, H.; Konishi, Y.; Fujimori, T.; Miyoshi, N.; Imade, M.; Yoshimura, M.; Kitaoka, Y.; Sasaki, T.; Mori, Y.
2011-02-01
GaN substrates are desirable for fabricating ultra-violet LEDs and LDs, and high-power and high-frequency transistors. High-quality GaN single crystals can be obtained by using Na flux method, but the growth habit of bulk crystals must be controlled. In this study, we investigated the effects of additives (Ca, Ba) on the growth habit and impurity concentration in the crystals. The aspect ratio (c/a) of the crystals was increased by increasing the amount of additives, showing that the growth habit could be changed from the pyramidal shape to the prism shape. Ba concentration was below the detection limit (1x1015 atoms/cm3).
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Zn Electrodeposition on Single-Crystal GaN(0001 Surface: Nucleation and Growth Mechanism
Directory of Open Access Journals (Sweden)
Fei Peng
2016-01-01
Full Text Available The electrochemical deposition of zinc on single-crystal n-type GaN(0001 from a sulphate solution has been investigated on the basis of electrochemical techniques including cyclic voltammetry, chronoamperometry, and Tafel plot. The morphology and crystal structure of zinc deposits have been characterized by means of scanning electron microscopy, X-ray diffraction, and energy-dispersive X-ray analysis. The result has revealed that the deposition of Zn on GaN electrode commenced at a potential of −1.12 V versus Ag/AgCl. According to the Tafel plot, an exchange current density of ~0.132 mA cm−2 was calculated. In addition, the current transient measurements have shown that Zn deposition process followed the instantaneous nucleation in 10 mM ZnSO4 + 0.5 M Na2SO4 + 0.5 M H3BO3 (pH = 4.
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Hung, Shang-Chao
2014-12-01
This study reports a simple method to design and fabricate a freestanding GaN nano-bridge over a homogeneous short column as supporting leg. Test samples were fabricated from MOCVD-grown single-crystal GaN films over sapphire substrate using a FIB milling to leave freestanding short spans. We also investigated the nanoindentation characteristics and the corresponding nanoscopic mechanism of the GaN nano-bridge and its short column with a conical indenter inside transmission electron microscopy. The stress-strain mechanical properties and Young's modulus have also been examined and calculated as 108 GPa ± 4.8 % by the strain energy method. The significant slope switch of the L- D curve corresponds to the transition from the single-point bending indentation to the surface stretching indentation and has been interpreted with the evolution of TEM images. This freestanding fabrication and test have key advantages to characterize nanoscale behavior of one-dimensional bridge structure and greater ease of sample preparation over other micro-fabrication techniques.
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Energy Technology Data Exchange (ETDEWEB)
Tseng, H. Y.; Yang, W. C.; Lee, P. Y.; Lin, C. W.; Cheng, Kai-Yuan; Hsieh, K. C.; Cheng, K. Y., E-mail: kycheng@ee.nthu.edu.tw [Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Hsu, C.-H. [Division of Scientific Research, National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)
2016-08-22
GaN-based Schottky barrier diodes (SBDs) with single-crystal Al barriers grown by plasma-assisted molecular beam epitaxy are fabricated. Examined using in-situ reflection high-energy electron diffractions, ex-situ high-resolution x-ray diffractions, and high-resolution transmission electron microscopy, it is determined that epitaxial Al grows with its [111] axis coincident with the [0001] axis of the GaN substrate without rotation. In fabricated SBDs, a 0.2 V barrier height enhancement and 2 orders of magnitude reduction in leakage current are observed in single crystal Al/GaN SBDs compared to conventional thermal deposited Al/GaN SBDs. The strain induced piezoelectric field is determined to be the major source of the observed device performance enhancements.
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Fabrication of GaN epitaxial thin film on InGaZnO4 single-crystalline buffer layer
International Nuclear Information System (INIS)
Shinozaki, Tomomasa; Nomura, Kenji; Katase, Takayoshi; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo
2010-01-01
Epitaxial (0001) films of GaN were grown on (111) YSZ substrates using single-crystalline InGaZnO 4 (sc-IGZO) lattice-matched buffer layers by molecular beam epitaxy with a NH 3 source. The epitaxial relationships are (0001) GaN //(0001) IGZO //(111) YSZ in out-of-plane and [112-bar 0] GaN //[112-bar 0] IGZO //[11-bar 0] YSZ in in-plane. This is different from those reported for GaN on many oxide crystals; the in-plane orientation of GaN crystal lattice is rotated by 30 o with respect to those of oxide substrates except for ZnO. Although these GaN films showed relatively large tilting and twisting angles, which would be due to the reaction between GaN and IGZO, the GaN films grown on the sc-IGZO buffer layers exhibited stronger band-edge photoluminescence than GaN grown on a low-temperature GaN buffer layer.
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Defect formation and magnetic properties of Co-doped GaN crystal and nanowire
International Nuclear Information System (INIS)
Shi, Li-Bin; Liu, Jing-Jing; Fei, Ying
2013-01-01
Theoretical calculation based on density functional theory (DFT) and generalized gradient approximation (GGA) has been carried out in studying defect formation and magnetic properties of Co doped GaN crystal and nanowire (NW). Co does not exhibit site preference in GaN crystal. However, Co occupies preferably surface sites in GaN NW. Transition level of the defect is also investigated in GaN crystal. We also find that Co Ga (S) in NW does not produce spin polarization and Co Ga (B) produces spontaneous spin polarization. Ferromagnetic (FM) and antiferromagnetic (AFM) couplings are analyzed by six different configurations. The results show that AFM coupling is more stable than FM coupling for Co doped GaN crystal. It is also found from Co doped GaN NW calculation that the system remains FM stability for majority of the configurations. Magnetic properties in Co doped GaN crystal can be mediated by N and Ga vacancies. The FM and AFM stability can be explained by Co 3d energy level coupling
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Hamachi, T.; Takeuchi, S.; Tohei, T.; Imanishi, M.; Imade, M.; Mori, Y.; Sakai, A.
2018-04-01
The mechanisms associated with electrical conduction through individual threading dislocations (TDs) in a Na-flux GaN crystal grown with a multipoint-seed-GaN technique were investigated by conductive atomic force microscopy (C-AFM). To focus on individual TDs, dislocation-related etch pits (DREPs) were formed on the Na-flux GaN surface by wet chemical etching, after which microscopic Pt electrodes were locally fabricated on the DREPs to form conformal contacts to the Na-flux GaN crystal, using electron beam assisted deposition. The C-AFM data clearly demonstrate that the leakage current flows through the individual TD sites. It is also evident that the leakage current and the electrical conduction mechanism vary significantly based on the area within the Na-flux GaN crystal where the TDs are formed. These regions include the c-growth sector (cGS) in which the GaN grows in the [0001 ] direction on top of the point-seed with a c-plane growth front, the facet-growth sector (FGS) in which the GaN grows with {10 1 ¯ 1 } facets on the side of the cGS, the boundary region between the cGS and FGS (BR), and the coalescence boundary region between FGSs (CBR). The local current-voltage (I-V) characteristics of the specimen demonstrate space charge limited current conduction and conduction related to band-like trap states associated with TDs in the FGS, BR, and CBR. A detailed analysis of the I-V data indicates that the electrical conduction through TDs in the cGS may proceed via the Poole-Frenkel emission mechanism.
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The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE.
Lee, Moonsang; Mikulik, Dmitry; Yang, Mino; Park, Sungsoo
2017-08-17
We investigate the stress evolution of 400 µm-thick freestanding GaN crystals grown from Si substrates by hydride vapour phase epitaxy (HVPE) and the in situ removal of Si substrates. The stress generated in growing GaN can be tuned by varying the thickness of the MOCVD AlGaN/AlN buffer layers. Micro Raman analysis shows the presence of slight tensile stress in the freestanding GaN crystals and no stress accumulation in HVPE GaN layers during the growth. Additionally, it is demonstrated that the residual tensile stress in HVPE GaN is caused only by elastic stress arising from the crystal quality difference between Ga- and N-face GaN. TEM analysis revealed that the dislocations in freestanding GaN crystals have high inclination angles that are attributed to the stress relaxation of the crystals. We believe that the understanding and characterization on the structural properties of the freestanding GaN crystals will help us to use these crystals for high-performance opto-electronic devices.
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Photophysics of GaN single-photon emitters in the visible spectral range
Berhane, Amanuel M.; Jeong, Kwang-Yong; Bradac, Carlo; Walsh, Michael; Englund, Dirk; Toth, Milos; Aharonovich, Igor
2018-04-01
In this work, we present a detailed photophysical analysis of recently discovered, optically stable single-photon emitters (SPEs) in gallium nitride (GaN). Temperature-resolved photoluminescence measurements reveal that the emission lines at 4 K are three orders of magnitude broader than the transform-limited width expected from excited-state lifetime measurements. The broadening is ascribed to ultrafast spectral diffusion. The photophysical study on several emitters at room temperature (RT) reveals an average brightness of (427 ±215 )kCounts /s . Finally, polarization measurements from 14 emitters are used to determine visibility as well as dipole orientation of defect systems within the GaN crystal. Our results underpin some of the fundamental properties of SPEs in GaN both at cryogenic and RT, and define the benchmark for future work in GaN-based single-photon technologies.
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Growth of Ga2O3 single crystal
龍見, 雅美; 小池, 裕之; 市木, 伸明; Tatsumi, Masami; Koike, Hiroyuki; Ichiki, Nobuaki
2010-01-01
Single crystals of β-Ga2O3 for substrates of GaN LED were grown by Floating Zone(FZ) method. The transparent single crystals of 5-6 mm in diameter were reproducibly obtained by applying necking procedure and the preferential growth direction was . Many cracks were induced along the cleavage plane of (100) in slicing process, which is related to thermal stress and the growth direction. However, this preliminary growth experiments suggested that β-Ga2O3 single crystal is promising as a substrat...
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High quality self-separated GaN crystal grown on a novel nanoporous template by HVPE.
Huo, Qin; Shao, Yongliang; Wu, Yongzhong; Zhang, Baoguo; Hu, Haixiao; Hao, Xiaopeng
2018-02-16
In this study, a novel nanoporous template was obtained by a two-step etching process from MOCVD-GaN/Al 2 O 3 (MGA) with electrochemical etching sequentially followed by chemical wet etching. The twice-etched MOCVD-GaN/Al 2 O 3 (TEMGA) templates were utilized to grow GaN crystals by hydride vapor phase epitaxy (HVPE) method. The GaN crystals were separated spontaneously from the TEMGA template with the assistance of voids formed by the etched nanopores. Several techniques were utilized to characterize the quality of the free-standing GaN crystals obtained from the TEMGA template. Results showed that the quality of the as-obtained GaN crystals was improved obviously compared with those grown on the MGA. This convenient technique can be applied to grow high-quality free-standing GaN crystals.
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Mechanical, Thermodynamic and Electronic Properties of Wurtzite and Zinc-Blende GaN Crystals
Luan, Xinghe; Feng, Chuang; Yang, Daoguo; Zhang, Guoqi
2017-01-01
For the limitation of experimental methods in crystal characterization, in this study, the mechanical, thermodynamic and electronic properties of wurtzite and zinc-blende GaN crystals were investigated by first-principles calculations based on density functional theory. Firstly, bulk moduli, shear moduli, elastic moduli and Poisson’s ratios of the two GaN polycrystals were calculated using Voigt and Hill approximations, and the results show wurtzite GaN has larger shear and elastic moduli and exhibits more obvious brittleness. Moreover, both wurtzite and zinc-blende GaN monocrystals present obvious mechanical anisotropic behavior. For wurtzite GaN monocrystal, the maximum and minimum elastic moduli are located at orientations [001] and , respectively, while they are in the orientations and for zinc-blende GaN monocrystal, respectively. Compared to the elastic modulus, the shear moduli of the two GaN monocrystals have completely opposite direction dependences. However, different from elastic and shear moduli, the bulk moduli of the two monocrystals are nearly isotropic, especially for the zinc-blende GaN. Besides, in the wurtzite GaN, Poisson’s ratios at the planes containing [001] axis are anisotropic, and the maximum value is 0.31 which is located at the directions vertical to [001] axis. For zinc-blende GaN, Poisson’s ratios at planes (100) and (111) are isotropic, while the Poisson’s ratio at plane (110) exhibits dramatically anisotropic phenomenon. Additionally, the calculated Debye temperatures of wurtzite and zinc-blende GaN are 641.8 and 620.2 K, respectively. At 300 K, the calculated heat capacities of wurtzite and zinc-blende are 33.6 and 33.5 J mol−1 K−1, respectively. Finally, the band gap is located at the G point for the two crystals, and the band gaps of wurtzite and zinc-blende GaN are 3.62 eV and 3.06 eV, respectively. At the G point, the lowest energy of conduction band in the wurtzite GaN is larger, resulting in a wider band gap
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Mechanical, Thermodynamic and Electronic Properties of Wurtzite and Zinc-Blende GaN Crystals
Directory of Open Access Journals (Sweden)
Hongbo Qin
2017-12-01
Full Text Available For the limitation of experimental methods in crystal characterization, in this study, the mechanical, thermodynamic and electronic properties of wurtzite and zinc-blende GaN crystals were investigated by first-principles calculations based on density functional theory. Firstly, bulk moduli, shear moduli, elastic moduli and Poisson’s ratios of the two GaN polycrystals were calculated using Voigt and Hill approximations, and the results show wurtzite GaN has larger shear and elastic moduli and exhibits more obvious brittleness. Moreover, both wurtzite and zinc-blende GaN monocrystals present obvious mechanical anisotropic behavior. For wurtzite GaN monocrystal, the maximum and minimum elastic moduli are located at orientations [001] and <111>, respectively, while they are in the orientations <111> and <100> for zinc-blende GaN monocrystal, respectively. Compared to the elastic modulus, the shear moduli of the two GaN monocrystals have completely opposite direction dependences. However, different from elastic and shear moduli, the bulk moduli of the two monocrystals are nearly isotropic, especially for the zinc-blende GaN. Besides, in the wurtzite GaN, Poisson’s ratios at the planes containing [001] axis are anisotropic, and the maximum value is 0.31 which is located at the directions vertical to [001] axis. For zinc-blende GaN, Poisson’s ratios at planes (100 and (111 are isotropic, while the Poisson’s ratio at plane (110 exhibits dramatically anisotropic phenomenon. Additionally, the calculated Debye temperatures of wurtzite and zinc-blende GaN are 641.8 and 620.2 K, respectively. At 300 K, the calculated heat capacities of wurtzite and zinc-blende are 33.6 and 33.5 J mol−1 K−1, respectively. Finally, the band gap is located at the G point for the two crystals, and the band gaps of wurtzite and zinc-blende GaN are 3.62 eV and 3.06 eV, respectively. At the G point, the lowest energy of conduction band in the wurtzite GaN is larger
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Mechanical, Thermodynamic and Electronic Properties of Wurtzite and Zinc-Blende GaN Crystals.
Qin, Hongbo; Luan, Xinghe; Feng, Chuang; Yang, Daoguo; Zhang, Guoqi
2017-12-12
For the limitation of experimental methods in crystal characterization, in this study, the mechanical, thermodynamic and electronic properties of wurtzite and zinc-blende GaN crystals were investigated by first-principles calculations based on density functional theory. Firstly, bulk moduli, shear moduli, elastic moduli and Poisson's ratios of the two GaN polycrystals were calculated using Voigt and Hill approximations, and the results show wurtzite GaN has larger shear and elastic moduli and exhibits more obvious brittleness. Moreover, both wurtzite and zinc-blende GaN monocrystals present obvious mechanical anisotropic behavior. For wurtzite GaN monocrystal, the maximum and minimum elastic moduli are located at orientations [001] and , respectively, while they are in the orientations and for zinc-blende GaN monocrystal, respectively. Compared to the elastic modulus, the shear moduli of the two GaN monocrystals have completely opposite direction dependences. However, different from elastic and shear moduli, the bulk moduli of the two monocrystals are nearly isotropic, especially for the zinc-blende GaN. Besides, in the wurtzite GaN, Poisson's ratios at the planes containing [001] axis are anisotropic, and the maximum value is 0.31 which is located at the directions vertical to [001] axis. For zinc-blende GaN, Poisson's ratios at planes (100) and (111) are isotropic, while the Poisson's ratio at plane (110) exhibits dramatically anisotropic phenomenon. Additionally, the calculated Debye temperatures of wurtzite and zinc-blende GaN are 641.8 and 620.2 K, respectively. At 300 K, the calculated heat capacities of wurtzite and zinc-blende are 33.6 and 33.5 J mol -1 K -1 , respectively. Finally, the band gap is located at the G point for the two crystals, and the band gaps of wurtzite and zinc-blende GaN are 3.62 eV and 3.06 eV, respectively. At the G point, the lowest energy of conduction band in the wurtzite GaN is larger, resulting in a wider band gap. Densities of
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Fujikura, Hajime; Konno, Taichiro; Suzuki, Takayuki; Kitamura, Toshio; Fujimoto, Tetsuji; Yoshida, Takehiro
2018-06-01
On the basis of a novel crystal hardness control, we successfully realized macrodefect-free, large (2–6 in.) and thick +c-oriented GaN bulk crystals by hydride vapor phase epitaxy. Without the hardness control, the introduction of macrodefects including inversion domains and/or basal-plane dislocations seemed to be indispensable to avoid crystal fracture in GaN growth with millimeter thickness. However, the presence of these macrodefects tended to limit the applicability of the GaN substrate to practical devices. The present technology markedly increased the GaN crystal hardness from below 20 to 22 GPa, thus increasing the available growth thickness from below 1 mm to over 6 mm even without macrodefect introduction. The 2 and 4 in. GaN wafers fabricated from these crystals had extremely low dislocation densities in the low- to mid-105 cm‑2 range and low off-angle variations (2 in.: <0.1° 4 in.: ∼0.2°). The realization of such high-quality 6 in. wafers is also expected.
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GaN Nanowires Synthesized by Electroless Etching Method
Najar, Adel; Anjum, Dalaver H.; Ng, Tien Khee; Ooi, Boon S.; Ben Slimane, Ahmed
2012-01-01
Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.
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Crystal Structures of GaN Nanodots by Nitrogen Plasma Treatment on Ga Metal Droplets
Directory of Open Access Journals (Sweden)
Yang-Zhe Su
2018-06-01
Full Text Available Gallium nitride (GaN is one of important functional materials for optoelectronics and electronics. GaN exists both in equilibrium wurtzite and metastable zinc-blende structural phases. The zinc-blende GaN has superior electronic and optical properties over wurtzite one. In this report, GaN nanodots can be fabricated by Ga metal droplets in ultra-high vacuum and then nitridation by nitrogen plasma. The size, shape, density, and crystal structure of GaN nanodots can be characterized by transmission electron microscopy. The growth parameters, such as pre-nitridation treatment on Si surface, substrate temperature, and plasma nitridation time, affect the crystal structure of GaN nanodots. Higher thermal energy could provide the driving force for the phase transformation of GaN nanodots from zinc-blende to wurtzite structures. Metastable zinc-blende GaN nanodots can be synthesized by the surface modification of Si (111 by nitrogen plasma, i.e., the pre-nitridation treatment is done at a lower growth temperature. This is because the pre-nitridation process can provide a nitrogen-terminal surface for the following Ga droplet formation and a nitrogen-rich condition for the formation of GaN nanodots during droplet epitaxy. The pre-nitridation of Si substrates, the formation of a thin SiNx layer, could inhibit the phase transformation of GaN nanodots from zinc-blende to wurtzite phases. The pre-nitridation treatment also affects the dot size, density, and surface roughness of samples.
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International Nuclear Information System (INIS)
Park, Sung Hyun; Moon, Dae Young; Kim, Bum Ho; Kim, Dong Uk; Chang, Ho Jun; Jeon, Heon Su; Yoon, Eui Joon; Joo, Ki Su; You, Duck Jae; Nanishi, Yasushi
2012-01-01
a-plane GaN on r-plane sapphire substrates suffers from high density defects and rough surfaces. To obtain pit-free a-plane GaN by metal-organic chemical vapor deposition, we intentionally grew high-temperature (HT) 3-dimensional (3D) GaN buffer layers on a GaN nucleation layer. The effects of the HT 3D GaN buffer layers on crystal quality and the surface morphology of a-plane GaN were studied. The insertion of a 3D GaN buffer layer with an optimum thickness was found to be an effective method to obtain pit-free a-plane GaN with improved crystalline quality on r-plane sapphire substrates. An a-plane GaN light emitting diode (LED) at an emission wavelength around 480 nm with negligible peak shift was successfully fabricated.
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Iwinska, Malgorzata; Piotrzkowski, Ryszard; Litwin-Staszewska, Elzbieta; Sochacki, Tomasz; Amilusik, Mikolaj; Fijalkowski, Michal; Lucznik, Boleslaw; Bockowski, Michal
2017-01-01
GaN crystals were grown by hydride vapor phase epitaxy (HVPE) and doped with C. The seeds were high-structural-quality ammonothermally crystallized GaN. The grown crystals were highly resistive at 296 K and of high structural quality. High-temperature Hall effect measurements revealed p-type conductivity and a deep acceptor level in the material with an activation energy of 1 eV. This is in good agreement with density functional theory calculations based on hybrid functionals as presented by the Van de Walle group. They obtained an ionization energy of 0.9 eV when C was substituted for N in GaN and acted as a deep acceptor.
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Mechanical, thermodynamic and electronic properties of wurtzite and zinc-blende GaN crystals
Qin, Hongbo; Luan, Xinghe; Feng, Chuang; Yang, Daoguo; Zhang, G.Q.
2017-01-01
For the limitation of experimental methods in crystal characterization, in this study, the mechanical, thermodynamic and electronic properties of wurtzite and zinc-blende GaN crystals were investigated by first-principles calculations based on density functional theory. Firstly, bulk moduli,
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International Nuclear Information System (INIS)
Mezdrogina, M.M.; Krivolapchuk, V.V.; Petrov, V.N.; Rodin, S.N.; Cherenkov, A.V.
2006-01-01
It is shown that the effect of dopants on the photoluminescence spectrum depends on the conductivity type of the initial GaN crystals. The sensitizing effect of emission is observed in wurtzite p-GaN crystals doped with Er. The same effect was previously observed in such crystals doped with Eu and Zn. In n-type GaN crystals sequentially doped with Eu, Zn, and Er, the emission is observed in visible and infrared ranges of the photoluminescence spectrum [ru
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International Nuclear Information System (INIS)
Mezdrogina, M. M.; Krivolapchuk, V. V.; Petrov, V. N.; Rodin, S. N.; Cherenkov, A. V.
2006-01-01
It is shown that the effect of dopants on the photoluminescence spectrum depends on the conductivity type of the initial GaN crystals. Sensitization of emission is observed in wurtzite p-GaN crystals doped with Er. The same effect was previously observed in such crystals doped with Eu and Zn. In n-type GaN crystals sequentially doped with Eu, Zn, and Er, emission is observed in the visible (λ = 360-440 and 530-560 nm) and IR (λ = 1.54 μm) spectral regions
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Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors
Energy Technology Data Exchange (ETDEWEB)
Velazquez, R.; Rivera, M.; Feng, P., E-mail: p.feng@upr.edu [Department of Physics, College of Natural Sciences, University of Puerto Rico, San Juan, 00936-8377, PR/USA (Puerto Rico); Aldalbahi, A. [Department of Chemistry, College of Science, King Saud University, Riyadh 11451 (Saudi Arabia)
2016-08-15
High-quality single crystalline Gallium Nitride (GaN) semiconductor has been synthesized using molecule beam epitaxy (MBE) technique for development of high-performance deep ultraviolet (UV) photodetectors. Thickness of the films was estimated by using surface profile meter and scanning electron microscope. Electronic states and elemental composition of the films were obtained using Raman scattering spectroscopy. The orientation, crystal structure and phase purity of the films were examined using a Siemens x-ray diffractometer radiation. The surface microstructure was studied using high resolution scanning electron microscopy (SEM). Two types of metal pairs: Al-Al, Al-Cu or Cu-Cu were used for interdigital electrodes on GaN film in order to examine the Schottky properties of the GaN based photodetector. The characterizations of the fabricated prototype include the stability, responsivity, response and recovery times. Typical time dependent photoresponsivity by switching different UV light source on and off five times for each 240 seconds at a bias of 2V, respectively, have been obtained. The detector appears to be highly sensitive to various UV wavelengths of light with very stable baseline and repeatability. The obtained photoresponsivity was up to 354 mA/W at the bias 2V. Higher photoresponsivity could be obtained if higher bias was applied but it would unavoidably result in a higher dark current. Thermal effect on the fabricated GaN based prototype was discussed.
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Synthesis and Raman scattering of GaN nanorings, nanoribbons and nanowires
Energy Technology Data Exchange (ETDEWEB)
Li, Z.J. [Academia Sinica, Beijing, BJ (China). Inst. of Physics; Northwestern Polytechnical Univ., Xian, SN (China). Dept. of Materials Science and Engineering; Chen, X.L.; Tu, Q.Y.; Yang, Z.; Xu, Y.P.; Hu, B.Q. [Academia Sinica, Beijing, BJ (China). Inst. of Physics; Li, H.J. [Northwestern Polytechnical Univ., Xian, SN (China). Dept. of Materials Science and Engineering
2001-05-01
Low-dimensional GaN materials, including nanorings, nanoribbons and smooth nanowires have been synthesized by reacting gallium and ammonia using Ag particles as a catalyst on the substrate of MgO single crystals. They were characterized by field emission scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD). EDX, XRD indicated that the low-dimensional nanomaterials were wurtzite GaN. New features are found in Raman scatterings for these low-dimensional GaN materials, which are different from the previous observations of GaN materials. (orig.)
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Influence of in-situ deposited SiNx interlayer on crystal quality of GaN epitaxial films
Fan, Teng; Jia, Wei; Tong, Guangyun; Zhai, Guangmei; Li, Tianbao; Dong, Hailiang; Xu, Bingshe
2018-05-01
GaN epitaxial films with SiNx interlayers were prepared by metal organic chemical vapor deposition (MOCVD) on c-plane sapphire substrates. The influences of deposition times and locations of SiNx interlayers on crystal quality of GaN epitaxial films were studied. Under the optimal growth time of 120 s for the SiNx interlayer, the dislocation density of GaN film is reduced to 4.05 × 108 cm-2 proved by high resolution X-ray diffraction results. It is found that when the SiNx interlayer deposits on the GaN nucleation islands, the subsequent GaN film has the lowest dislocation density of only 2.89 × 108 cm-2. Moreover, a model is proposed to illustrate the morphological evolution and associated propagation processes of TDs in GaN epi-layers with SiNx interlayers for different deposition times and locations.
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Polarization Raman spectroscopy of GaN nanorod bundles
International Nuclear Information System (INIS)
Tite, T.; Lee, C. J.; Chang, Y.-M.
2010-01-01
We performed polarization Raman spectroscopy on single wurtzite GaN nanorod bundles grown by plasma-assisted molecular beam epitaxy. The obtained Raman spectra were compared with those of GaN epilayer. The spectral difference between the GaN nanorod bundles and epilayer reveals the relaxation of Raman selection rules in these GaN nanorod bundles. The deviation of polarization-dependent Raman spectroscopy from the prediction of Raman selection rules is attributed to both the orientation of the crystal axis with respect to the polarization vectors of incident and scattered light and the structural defects in the merging boundary of GaN nanorods. The presence of high defect density induced by local strain at the merging boundary was further confirmed by transmission electron microscopy. The averaged defect interspacing was estimated to be around 3 nm based on the spatial correlation model.
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Redshift of A 1(longitudinal optical) mode for GaN crystals under strong electric field
Gu, Hong; Wu, Kaijie; Zheng, Shunan; Shi, Lin; Zhang, Min; Liu, Zhenghui; Liu, Xinke; Wang, Jianfeng; Zhou, Taofei; Xu, Ke
2018-01-01
We investigated the property of GaN crystals under a strong electric field. The Raman spectra of GaN were measured using an ultraviolet laser, and a remarkable redshift of the A 1(LO) mode was observed. The role of the surface depletion layer was discussed, and the interrelation between the electric field and phonons was revealed. First-principles calculations indicated that, in particular, the phonons that vibrate along the [0001] direction are strongly influenced by the electric field. This effect was confirmed by a surface photovoltage experiment. The results revealed the origin of the redshift and presented the phonon property of GaN under a strong electric field.
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Structural characteristics of single crystalline GaN films grown on (111) diamond with AlN buffer
DEFF Research Database (Denmark)
Pécz, Béla; Tóth, Lajos; Barna, Árpád
2013-01-01
Hexagonal GaN films with the [0001] direction parallel to the surface normal were grown on (111) oriented single crystalline diamond substrates by plasma-assisted molecular beam epitaxy. Pre-treatments of the diamond surface with the nitrogen plasma beam, prior the nucleation of a thin AlN layer......, eliminated the inversion domains and reduced the density of threading dislocations in the GaN epilayers. The films have an in-plane epitaxial relationship [1010]GaN//[110]diamond. Thus GaN (0001) thin films of single epitaxial relationship and of single polarity were realised on diamond with AlN buffer....
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International Nuclear Information System (INIS)
Lu, Yinghui; Clothiaux, Eugene E.; Aydin, Kültegin; Botta, Giovanni; Verlinde, Johannes
2013-01-01
Using the Generalized Multi-particle Mie-method (GMM), Botta et al. (in this issue) [7] created a database of backscattering cross sections for 412 different ice crystal dendrites at X-, Ka- and W-band wavelengths for different incident angles. The Rayleigh–Gans theory, which accounts for interference effects but ignores interactions between different parts of an ice crystal, explains much, but not all, of the variability in the database of backscattering cross sections. Differences between it and the GMM range from −3.5 dB to +2.5 dB and are highly dependent on the incident angle. To explain the residual variability a physically intuitive iterative method was developed to estimate the internal electric field within an ice crystal that accounts for interactions between the neighboring regions within it. After modifying the Rayleigh–Gans theory using this estimated internal electric field, the difference between the estimated backscattering cross sections and those from the GMM method decreased to within 0.5 dB for most of the ice crystals. The largest percentage differences occur when the form factor from the Rayleigh–Gans theory is close to zero. Both interference effects and neighbor interactions are sensitive to the morphology of ice crystals. Improvements in ice-microphysical models are necessary to predict or diagnose internal structures within ice crystals to aid in more accurate interpretation of radar returns. Observations of the morphology of ice crystals are, in turn, necessary to guide the development of such ice-microphysical models and to better understand the statistical properties of ice crystal morphologies in different environmental conditions. -- Highlights: • Significant variability exists in radar backscattering cross sections of dendrites. • Source of variability depends upon detailed distribution of mass within dendrites. • The Rayleigh–Gans theory (RG) captures most of the variability. • Improving RG by estimating dendrite
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Zero lattice mismatch and twin-free single crystalline ScN buffer layers for GaN growth on silicon
Energy Technology Data Exchange (ETDEWEB)
Lupina, L.; Zoellner, M. H.; Dietrich, B.; Capellini, G. [IHP, Im Technologiepark 25, 15236 Frankfurt, Oder (Germany); Niermann, T.; Lehmann, M. [Technische Universität Berlin, Institut für Optik und Atomare Physik, Straße des 17. Juni 135, 10623 Berlin (Germany); Thapa, S. B.; Haeberlen, M.; Storck, P. [SILTRONIC AG, Hanns-Seidel-Platz 4, 81737 München (Germany); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt, Oder (Germany); BTU Cottbus, Konrad-Zuse-Str. 1, 03046 Cottbus (Germany)
2015-11-16
We report the growth of thin ScN layers deposited by plasma-assisted molecular beam epitaxy on Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/Si(111) substrates. Using x-ray diffraction, Raman spectroscopy, and transmission electron microscopy, we find that ScN films grown at 600 °C are single crystalline, twin-free with rock-salt crystal structure, and exhibit a direct optical band gap of 2.2 eV. A high degree of crystalline perfection and a very good lattice matching between ScN and GaN (misfit < 0.1%) makes the ScN/Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} buffer system a very promising template for the growth of high quality GaN layers on silicon.
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Growth of GaN micro/nanolaser arrays by chemical vapor deposition.
Liu, Haitao; Zhang, Hanlu; Dong, Lin; Zhang, Yingjiu; Pan, Caofeng
2016-09-02
Optically pumped ultraviolet lasing at room temperature based on GaN microwire arrays with Fabry-Perot cavities is demonstrated. GaN microwires have been grown perpendicularly on c-GaN/sapphire substrates through simple catalyst-free chemical vapor deposition. The GaN microwires are [0001] oriented single-crystal structures with hexagonal cross sections, each with a diameter of ∼1 μm and a length of ∼15 μm. A possible growth mechanism of the vertical GaN microwire arrays is proposed. Furthermore, we report room-temperature lasing in optically pumped GaN microwire arrays based on the Fabry-Perot cavity. Photoluminescence spectra exhibit lasing typically at 372 nm with an excitation threshold of 410 kW cm(-2). The result indicates that these aligned GaN microwire arrays may offer promising prospects for ultraviolet-emitting micro/nanodevices.
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Single phase semipolar (11 anti 22) GaN on (10 anti 10) sapphire
Energy Technology Data Exchange (ETDEWEB)
Ploch, S.; Stellmach, J.; Schwaner, T.; Frentrup, M.; Wernicke, T.; Pristovsek, M.; Kneissl, M. [Institute of Solid States Physics, (Germany); Park, J.B.; Niermann, T.; Lehmann, M. [Institute of Optics and Atomic Physics, TU Berlin, Hardenbergstr. 36, 10623 Berlin (Germany)
2011-07-01
InGaN quantum well based light emitters grown on (0001) GaN suffer from poor quantum efficiencies with increasing indium mole fraction due to strong polarization fields along the polar crystal orientation. This effect can be greatly reduced by growing on semi- and non-polar GaN orientations. Semipolar (11 anti 22) GaN layers were deposited by metalorganic vapour phase epitaxy on (10 anti 10) sapphire. After sapphire substrate nitridation at 1000 C, a GaN nucleation layer was deposited at high temperature, followed by the deposition of 1.5 nm thick GaN buffer layers. The samples show predominantly (11 anti 22) orientation with a small fraction of (10 anti 13) oriented domains. With increasing nitridation layer thickness the (10 anti 13) phase is suppressed leading to a very smooth surface morphology (rms roughness < 4nm). PL measurements show dominant basel plane stacking fault (BSF) I{sub 1} luminescence without any other defects. Transmission electron microscopy measurements reveal a high BSF density. The FWHM of the X-ray diffraction rocking curve measurements of the (1122) reflection decreases to 1193 arcsec and 739 arcsec along [1 anti 100] and [11 anti 23] respectively with increasing nucleation temperature. Using high temperature nucleation smooth and homogeneous (11 anti 22) phase GaN layers have been obtained.
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International Nuclear Information System (INIS)
Patsha, Avinash; Dhara, Sandip; Tyagi, A. K.
2015-01-01
The localized effect of impurities in single GaN nanowires in the sub-diffraction limit is reported using the study of lattice vibrational modes in the evanescent field of Au nanoparticle assisted tip enhanced Raman spectroscopy (TERS). GaN nanowires with the O impurity and the Mg dopants were grown by the chemical vapor deposition technique in the catalyst assisted vapor-liquid-solid process. Symmetry allowed Raman modes of wurtzite GaN are observed for undoped and doped nanowires. Unusually very strong intensity of the non-zone center zone boundary mode is observed for the TERS studies of both the undoped and the Mg doped GaN single nanowires. Surface optical mode of A 1 symmetry is also observed for both the undoped and the Mg doped GaN samples. A strong coupling of longitudinal optical (LO) phonons with free electrons, however, is reported only in the O rich single nanowires with the asymmetric A 1 (LO) mode. Study of the local vibration mode shows the presence of Mg as dopant in the single GaN nanowires
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Energy Technology Data Exchange (ETDEWEB)
Patsha, Avinash, E-mail: avinash.phy@gmail.com, E-mail: dhara@igcar.gov.in; Dhara, Sandip; Tyagi, A. K. [Surface and Nanoscience Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India)
2015-09-21
The localized effect of impurities in single GaN nanowires in the sub-diffraction limit is reported using the study of lattice vibrational modes in the evanescent field of Au nanoparticle assisted tip enhanced Raman spectroscopy (TERS). GaN nanowires with the O impurity and the Mg dopants were grown by the chemical vapor deposition technique in the catalyst assisted vapor-liquid-solid process. Symmetry allowed Raman modes of wurtzite GaN are observed for undoped and doped nanowires. Unusually very strong intensity of the non-zone center zone boundary mode is observed for the TERS studies of both the undoped and the Mg doped GaN single nanowires. Surface optical mode of A{sub 1} symmetry is also observed for both the undoped and the Mg doped GaN samples. A strong coupling of longitudinal optical (LO) phonons with free electrons, however, is reported only in the O rich single nanowires with the asymmetric A{sub 1}(LO) mode. Study of the local vibration mode shows the presence of Mg as dopant in the single GaN nanowires.
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Study of GaN nanowires converted from β-Ga2O3 and photoconduction in a single nanowire
Kumar, Mukesh; Kumar, Sudheer; Chauhan, Neha; Sakthi Kumar, D.; Kumar, Vikram; Singh, R.
2017-08-01
The formation of GaN nanowires from β-Ga2O3 nanowires and photoconduction in a fabricated single GaN nanowire device has been studied. Wurtzite phase GaN were formed from monoclinic β-Ga2O3 nanowires with or without catalyst particles at their tips. The formation of faceted nanostructures from catalyst droplets presented on a nanowire tip has been discussed. The nucleation of GaN phases in β-Ga2O3 nanowires and their subsequent growth due to interfacial strain energy has been examined using a high resolution transmission electron microscope. The high quality of the converted GaN nanowire is confirmed by fabricating single nanowire photoconducting devices which showed ultra high responsivity under ultra-violet illumination.
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A new system for sodium flux growth of bulk GaN. Part I: System development
Von Dollen, Paul; Pimputkar, Siddha; Alreesh, Mohammed Abo; Albrithen, Hamad; Suihkonen, Sami; Nakamura, Shuji; Speck, James S.
2016-12-01
Though several methods exist to produce bulk crystals of gallium nitride (GaN), none have been commercialized on a large scale. The sodium flux method, which involves precipitation of GaN from a sodium-gallium melt supersaturated with nitrogen, offers potentially lower cost production due to relatively mild process conditions while maintaining high crystal quality. We successfully developed a novel apparatus for conducting crystal growth of bulk GaN using the sodium flux method which has advantages with respect to prior reports. A key task was to prevent sodium loss or migration from the growth environment while permitting N2 to access the growing crystal. We accomplished this by implementing a reflux condensing stem along with a reusable capsule containing a hermetic seal. The reflux condensing stem also enabled direct monitoring of the melt temperature, which has not been previously reported for the sodium flux method. Furthermore, we identified and utilized molybdenum and the molybdenum alloy TZM as a material capable of directly containing the corrosive sodium-gallium melt. This allowed implementation of a crucible-free system, which may improve process control and potentially lower crystal impurity levels. Nucleation and growth of parasitic GaN ("PolyGaN") on non-seed surfaces occurred in early designs. However, the addition of carbon in later designs suppressed PolyGaN formation and allowed growth of single crystal GaN. Growth rates for the (0001) Ga face (+c-plane) were up to 14 μm/h while X-ray omega rocking (ω-XRC) curve full width half-max values were 731″ for crystals grown using a later system design. Oxygen levels were high, >1019 atoms/cm3, possibly due to reactor cleaning and handling procedures.
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Epitaxial condition and polarity in GaN grown on a HfN-buffered Si(111) wafer
Xu, X.; Armitage, R.; Shinkai, Satoko; Sasaki, Katsutaka; Kisielowski, C.; Weber, E. R.
2005-05-01
Single-crystal GaN thin films have been deposited epitaxially on a HfN-buffered Si(111) substrates by molecular-beam epitaxy. The microstructural and compositional characteristics of the films were studied in detail by transmission electron microscopy (TEMs). Cross-sectional TEM investigations have revealed the crystallographic orientation relationship in different GaN /HfN/Si layers. GaN film polarity is studied by conventional TEM and convergent beam electron diffraction simulations, and the results show that the GaN film has a Ga polarity with relatively high density of inversion domains. Based on our observations, growth mechanisms related to the structural properties are discussed.
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International Nuclear Information System (INIS)
Xue Chengshane; Tian Deheng; Zhuang Huizhao; Zhang Xiaokai; Wu Yuxin; Liu Yi'an; He Jianting; Ai Yujie
2006-01-01
Sword-like GaN nanorods have been successfully synthesized by ammoniating Ga 2 O 3 thin films deposited on Si substrate by magnetron sputtering. The GaN nanorods have been characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED). SEM images show that sword-like GaN nanorods take on radial structure. The XRD and SAED analyses have identified that the nanorods are pure hexagonal GaN with single crystalline wurtzite structure. The HRTEM images indicate that the nanorods are well crystallized and nearly free from defects
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DETERMINATION OF VICKERS MICROHARDNESS IN β-Ga2O3 SINGLE CRYSTALS GROWN FROM THEIR OWN MELT
Directory of Open Access Journals (Sweden)
L. I. Guzilova
2015-05-01
Full Text Available The results of microhardness measurements of β-Ga2O3 single crystals for (001 crystallographic face are reported. The crystals were grown by the free crystallization with the "Garnet-2M" equipment. Microhardness values were determined by the Vickers method at varying loads. A four-sided diamond pyramid was used as an indenter. The average value of gallium oxide microhardness was equal to 8.91 GPa. We have carried out comparison of the values obtained with the microhardness for the other wide bandgap semiconductors - epitaxial GaN layers grown on 6H-SiC and GaP layers grown on GaP:S. The findings are usable for machining process development of β-Ga2O3 single crystal substrates. In particular, silicon carbide and electrocorundum may be recommended for β-Ga2O3 machine processing.
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Gürbüz, E.; Cahangirov, S.; Durgun, E.; Ciraci, S.
2017-11-01
Further to planar single-layer hexagonal structures, GaN and AlN can also form free-standing, single-layer structures constructed from squares and octagons. We performed an extensive analysis of dynamical and thermal stability of these structures in terms of ab initio finite-temperature molecular dynamics and phonon calculations together with the analysis of Raman and infrared active modes. These single-layer square-octagon structures of GaN and AlN display directional mechanical properties and have wide, indirect fundamental band gaps, which are smaller than their hexagonal counterparts. These density functional theory band gaps, however, increase and become wider upon correction. Under uniaxial and biaxial tensile strain, the fundamental band gaps decrease and can be closed. The electronic and magnetic properties of these single-layer structures can be modified by adsorption of various adatoms, or by creating neutral cation-anion vacancies. The single-layer structures attain magnetic moment by selected adatoms and neutral vacancies. In particular, localized gap states are strongly dependent on the type of vacancy. The energetics, binding, and resulting electronic structure of bilayer, trilayer, and three-dimensional (3D) layered structures constructed by stacking the single layers are affected by vertical chemical bonds between adjacent layers. In addition to van der Waals interaction, these weak vertical bonds induce buckling in planar geometry and enhance their binding, leading to the formation of stable 3D layered structures. In this respect, these multilayers are intermediate between van der Waals solids and wurtzite crystals, offering a wide range of tunability.
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Optical and Structural Characterizations of GaN Nano structures
International Nuclear Information System (INIS)
Shekari, L.; Abu Hassan, H.; Thahab, S.M.
2011-01-01
We have grown wurtzite GaN nano wires (NWs) on polished silicon (Si) either with or without Au as catalyst, using commercial GaN powder by thermal evaporation in an atmosphere of argon (Ar) gas. Structural and optical characterizations were performed using high resolution X-ray diffraction (HR-XRD), scanning electron microscopy (SEM), photoluminescence (PL) and energy-dispersive X-ray spectroscopy (EDX) spectroscopy. Results indicate that the nano wires are of single-crystal hexagonal GaN and the nano wires on Si with Au catalyst are more oriented than those without Au catalyst; and using catalyst make the NWs grow much faster and quite well-ordered. The compositional quality of the grown nano wires on the substrates are mostly same, however the nano wires on the Au coated silicon are of low density, while the nano wires on the Si are of high density. (author)
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Zn doped GaN for single-photon emission
Energy Technology Data Exchange (ETDEWEB)
Behrends, Arne; Ledig, Johannes; Al-Suleiman, Mohamed Aid Mansur; Bakin, Andrey; Waag, Andreas [Institute of Semiconductor Technology, University of Technology Braunschweig, Hans-Sommer-Str. 66, 38106 Braunschweig (Germany); Peters, Silke; Racu, Ana Maria; Schmunk, Waldemar; Hofer, Helmut; Kueck, Stefan [Physikalisch Technische Bundesanstalt (PTB), Bundesallee 100, 38116 Braunschweig (Germany)
2012-03-15
In this work we report on the optical investigation of Zn doped GaN films fabricated by metal organic chemical vapor deposition. The samples show bright emission in the blue spectral range around 2.9 eV when Si codoping is provided. This emission is suggested to be used for single-photon emission, thus the density of the Zn-Si pairs was drastically reduced leading to a decrease of the blue luminescence. For electrically excited single-photon sources these Zn-Si pairs have to be incorporated into LEDs, therefore we fabricated GaN-based nano-LEDs which show electroluminescence at 430 nm (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
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Wu, Chien-Ting; Chu, Ming-Wen; Chen, Li-Chyong; Chen, Kuei-Hsien; Chen, Chun-Wei; Chen, Cheng Hsuan
2010-10-01
Spectroscopic investigations of individual single-crystalline GaN nanowires with a lateral dimensions of approximately 30-90nm were performed using the spatially resolved technique of electron energy-loss spectroscopy in conjunction with scanning transmission electron microscope showing a 2-A electron probe. Positioning the electron probe upon transmission impact and at aloof setup with respect to the nanomaterials, we explored two types of surface modes intrinsic to GaN, surface exciton polaritons at approximately 8.3eV (approximately 150nm) and surface guided modes at 3.88eV (approximately 320nm), which are in visible/ultra-violet spectral regime above GaN bandgap of approximately 3.3eV (approximately 375nm) and difficult to access by conventional optical spectroscopies. The explorations of these electromagnetic resonances might expand the current technical interests in GaN nanomaterials from the visible/UV range below approximately 3.5eV to the spectral regime further beyond.
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Yan, X. Y.; Peng, J. F.; Yan, S. A.; Zheng, X. J.
2018-04-01
The electromechanical characterization of the field effect transistor based on a single GaN nanobelt was performed under different loading forces by using a conductive atomic force microscope (C-AFM), and the effective Schottky barrier height (SBH) and ideality factor are simulated by the thermionic emission model. From 2-D current image, the high value of the current always appears on the nanobelt edge with the increase of the loading force less than 15 nN. The localized (I-V) characteristic reveals a typical rectifying property, and the current significantly increases with the loading force at the range of 10-190 nN. The ideality factor is simulated as 9.8 within the scope of GaN nano-Schottky diode unity (6.5-18), therefore the thermionic emission current is dominant in the electrical transport of the GaN-tip Schottky junction. The SBH is changed through the piezoelectric effect induced by the loading force, and it is attributed to the enhanced current. Furthermore, a single GaN nanobelt has a high mechanical-induced current ratio that could be made use of in a nanoelectromechanical switch.
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A multistep single-crystal-to-single-crystal bromodiacetylene dimerization
Hoheisel, Tobias N.; Schrettl, Stephen; Marty, Roman; Todorova, Tanya K.; Corminboeuf, Clémence; Sienkiewicz, Andrzej; Scopelliti, Rosario; Schweizer, W. Bernd; Frauenrath, Holger
2013-04-01
Packing constraints and precise placement of functional groups are the reason that organic molecules in the crystalline state often display unusual physical or chemical properties not observed in solution. Here we report a single-crystal-to-single-crystal dimerization of a bromodiacetylene that involves unusually large atom displacements as well as the cleavage and formation of several bonds. Density functional theory computations support a mechanism in which the dimerization is initiated by a [2 + 1] photocycloaddition favoured by the nature of carbon-carbon short contacts in the crystal structure. The reaction proceeded up to the theoretical degree of conversion without loss of crystallinity, and it was also performed on a preparative scale with good yield. Moreover, it represents the first synthetic pathway to (E)-1,2-dibromo-1,2-diethynylethenes, which could serve as synthetic intermediates for the preparation of molecular carbon scaffolds. Our findings both extend the scope of single-crystal-to-single-crystal reactions and highlight their potential as a synthetic tool for complex transformations.
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Energy Technology Data Exchange (ETDEWEB)
Roder, C.
2007-02-26
The main topic of this thesis was the study of stress phenomena in GaN layers by application of high-resolution X-ray diffractometry at variable measurement temperature. For this a broad spectrum of different GaN samples was studied, which extended from bulk GaN crystals as well as thick c-plane oriented HVPE-GaN layers on c-plane sapphire over laterlaly overgrown c-plane GaN Layers on Si(111) substrates toon-polar a-plnae GaN layers on r-plane sapphire. The main topic of the measurements was the determination of the lattice parameters. Supplementarily the curvature of the waver as well as the excitonic resosance energies were studied by means of photoluminescence respectively photoreflection spectroscopy. By the measurement of the temperature-dependent lattice parameters of different GaN bulk crystals for the first time a closed set of thermal-expansion coefficients of GaN was determined from 12 to 1205 K with large accuracy. Analoguously the thermal-expansion coefficents of the substrate material sapphire were determinde over a temperature range from 10 to 1166 K.
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Epitaxial Single-Layer MoS2 on GaN with Enhanced Valley Helicity
Wan, Yi
2017-12-19
Engineering the substrate of 2D transition metal dichalcogenides can couple the quasiparticle interaction between the 2D material and substrate, providing an additional route to realize conceptual quantum phenomena and novel device functionalities, such as realization of a 12-time increased valley spitting in single-layer WSe2 through the interfacial magnetic exchange field from a ferromagnetic EuS substrate, and band-to-band tunnel field-effect transistors with a subthreshold swing below 60 mV dec−1 at room temperature based on bilayer n-MoS2 and heavily doped p-germanium, etc. Here, it is demonstrated that epitaxially grown single-layer MoS2 on a lattice-matched GaN substrate, possessing a type-I band alignment, exhibits strong substrate-induced interactions. The phonons in GaN quickly dissipate the energy of photogenerated carriers through electron–phonon interaction, resulting in a short exciton lifetime in the MoS2/GaN heterostructure. This interaction enables an enhanced valley helicity at room temperature (0.33 ± 0.05) observed in both steady-state and time-resolved circularly polarized photoluminescence measurements. The findings highlight the importance of substrate engineering for modulating the intrinsic valley carriers in ultrathin 2D materials and potentially open new paths for valleytronics and valley-optoelectronic device applications.
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Epitaxial Single-Layer MoS2 on GaN with Enhanced Valley Helicity
Wan, Yi; Xiao, Jun; Li, Jingzhen; Fang, Xin; Zhang, Kun; Fu, Lei; Li, Pan; Song, Zhigang; Zhang, Hui; Wang, Yilun; Zhao, Mervin; Lu, Jing; Tang, Ning; Ran, Guangzhao; Zhang, Xiang; Ye, Yu; Dai, Lun
2017-01-01
Engineering the substrate of 2D transition metal dichalcogenides can couple the quasiparticle interaction between the 2D material and substrate, providing an additional route to realize conceptual quantum phenomena and novel device functionalities, such as realization of a 12-time increased valley spitting in single-layer WSe2 through the interfacial magnetic exchange field from a ferromagnetic EuS substrate, and band-to-band tunnel field-effect transistors with a subthreshold swing below 60 mV dec−1 at room temperature based on bilayer n-MoS2 and heavily doped p-germanium, etc. Here, it is demonstrated that epitaxially grown single-layer MoS2 on a lattice-matched GaN substrate, possessing a type-I band alignment, exhibits strong substrate-induced interactions. The phonons in GaN quickly dissipate the energy of photogenerated carriers through electron–phonon interaction, resulting in a short exciton lifetime in the MoS2/GaN heterostructure. This interaction enables an enhanced valley helicity at room temperature (0.33 ± 0.05) observed in both steady-state and time-resolved circularly polarized photoluminescence measurements. The findings highlight the importance of substrate engineering for modulating the intrinsic valley carriers in ultrathin 2D materials and potentially open new paths for valleytronics and valley-optoelectronic device applications.
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The Formation and Characterization of GaN Hexagonal Pyramids
Zhang, Shi-Ying; Xiu, Xiang-Qian; Lin, Zeng-Qin; Hua, Xue-Mei; Xie, Zi-Li; Zhang, Rong; Zheng, You-Dou
2013-05-01
GaN with hexagonal pyramids is fabricated using the photo-assisted electroless chemical etching method. Defective areas of the GaN substrate are selectively etched in a mixed solution of KOH and K2S2O8 under ultraviolet illumination, producing submicron-sized pyramids. Hexagonal pyramids on the etched GaN with well-defined {101¯1¯} facets and very sharp tips are formed. High-resolution x-ray diffraction shows that etched GaN with pyramids has a higher crystal quality, and micro-Raman spectra reveal a tensile stress relaxation in GaN with pyramids compared with normal GaN. The cathodoluminescence intensity of GaN after etching is significantly increased by three times, which is attributed to the reduction in the internal reflection, high-quality GaN with pyramids and the Bragg effect.
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Study of optical properties of bulk GaN crystals grown by HVPE
Energy Technology Data Exchange (ETDEWEB)
Gu, Hong; Ren, Guoqiang; Zhou, Taofei; Tian, Feifei; Xu, Yu; Zhang, Yumin; Wang, Mingyue; Zhang, Zhiqiang [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Cai, Demin [Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China); Wang, Jianfeng [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China); Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)
2016-07-25
We investigated the optical properties of a series of GaN samples sliced from the same bulk crystal grown using hydride vapor phase epitaxy. The high crystalline quality of the samples was evaluated using cathodoluminescence measurements, and the dislocation density ranged from 2.4 × 10{sup 6} to 2.3 × 10{sup 5} cm{sup −2}. The impurity concentration was determined using secondary-ion mass spectroscopy, and photoluminescence (PL) measurements were conducted in the range of 3–300 K. We did not find a correlation between the O or C impurities and the weak yellow luminescence (YL) band. As the dislocation density decreased, the intensity of the band edge emission increased and that of the YL band decreased. A competition between the two-electron satellite lines correlated to Si and the YL band was also observed in the low-temperature PL spectra, which demonstrated that the Si impurity also plays an important role in the weak YL band of these GaN samples. These results indicate that the Si donors around the dislocations, as reasonable sources of shallow donors, will recombine with possible deep acceptors and finally respond with the YL. - Highlights: • The investigated samples were sliced from the same bulk crystal. • No correlation between the O or C impurities and the weak YL band is observed. • A well-regulated relationship between the YL band and the dislocations is found. • A competition between the TES-Si lines and the YL band is discussed. • The dislocations trapping Si impurity is suggested to be responsible for YL band.
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Structural characterization of bulk GaN crystals grown under high hydrostatic pressure
Liliental-Weber, Zuzanna; Kisielowski, C.; Ruvimov, S.; Chen, Y.; Washburn, J.; Grzegory, I.; Bockowski, M.; Jun, J.; Porowski, S.
1996-09-01
This paper describes TEM characterization of bulk GaN crystals grown at 1500-1800Kin the form of plates from a solution of atomic nitrogen in liquid gallium under high nitrogen pressure (up to 20 kbars). The x-ray rocking curves for these crystals were in the range of 20-30 arc-sec. The plate thickness along the c axis was about 100 times smaller than the nonpolar growth directions. A substantial difference in material quality was observed on the opposite sides of the plates normal to the c direction. On one side the surface was atomically flat, while on the other side the surface was rough, with pyramidal features up to 100 nm high. The polarity of the crystals was determined using convergent-beam electron diffraction. The results showed that, regarding the long bond between Ga and N along the c-axis, Ga atoms were found to be closer to the flat side of the crystal, while N atoms were found to be closer to the rough side. Near the rough side, within 1/10 to 1/4 of the plate thickness, there was a high density of planar defects (stacking faults and dislocation loops decorated by Ga/void precipitates). A model explaining the defect formation is proposed.
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Piezotronic Effect in Polarity-Controlled GaN Nanowires.
Zhao, Zhenfu; Pu, Xiong; Han, Changbao; Du, Chunhua; Li, Linxuan; Jiang, Chunyan; Hu, Weiguo; Wang, Zhong Lin
2015-08-25
Using high-quality and polarity-controlled GaN nanowires (NWs), we studied the piezotronic effect in crystal orientation defined wurtzite structures. By applying a normal compressive force on c-plane GaN NWs with an atomic force microscopy tip, the Schottky barrier between the Pt tip and GaN can be effectively tuned by the piezotronic effect. In contrast, the normal compressive force cannot change the electron transport characteristics in m-plane GaN NWs whose piezoelectric polarization axis is turned in the transverse direction. This observation provided solid evidence for clarifying the difference between the piezotronic effect and the piezoresistive effect. We further demonstrated a high sensitivity of the m-plane GaN piezotronic transistor to collect the transverse force. The integration of c-plane GaN and m-plane GaN indicates an overall response to an external force in any direction.
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International Nuclear Information System (INIS)
Shim, Byung-Young; Ko, Eun-A; Song, Jae-Chul; Kang, Dong-Hun; Kim, Dong-Wook; Lee, In-Hwan; Kannappan, Santhakumar; Lee, Cheul-Ro
2007-01-01
Single-crystal GaN nano-column arrays were grown on Au-coated silicon (111) substrate by Au-Ga alloy seeding method using metalorganic chemical vapor deposition (MOCVD). The nano-column arrays were studied as a function of growth parameters and Au thin film thickness. The diameter and length of the as-grown nano-column vary from 100 to 500 nm and 4 to 6 μm, respectively. The surface morphology and optical properties of the nano-columns were investigated using scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), cathodoluminescence (CL) and photoluminescence (PL). The Au+Ga alloy droplets were found to be uniformly distributed on silicon surface. Further, SEM image reveals a vertical growth and cylindrical in shape GaN nano-column. The chemical composition of the nano-column, which composed of gallium and nitrogen ions, was estimated by EDX. CL reveals a strong band edge emission from the GaN nano-column. PL spectra show a peak at 365.7 nm with a full-width half maximum (FWHM) of 65 meV which indicates good optical quality GaN nano-column with low dislocation density. Our results suggest that single crystal GaN nano-column can be grown on Au+Ga alloy on silicon substrate with a low dislocation density for better device performances. (author)
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Vectorial near-field imaging of a GaN based photonic crystal cavity
International Nuclear Information System (INIS)
La China, F.; Intonti, F.; Caselli, N.; Lotti, F.; Vinattieri, A.; Gurioli, M.; Vico Triviño, N.; Carlin, J.-F.; Butté, R.; Grandjean, N.
2015-01-01
We report a full optical deep sub-wavelength imaging of the vectorial components of the electric local density of states for the confined modes of a modified GaN L3 photonic crystal nanocavity. The mode mapping is obtained with a scanning near-field optical microscope operating in a resonant forward scattering configuration, allowing the vectorial characterization of optical passive samples. The optical modes of the investigated cavity emerge as Fano resonances and can be probed without the need of embedded light emitters or evanescent light coupling into the nanocavity. The experimental maps, independently measured in the two in-plane polarizations, turn out to be in excellent agreement with numerical predictions
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Axial p-n junction and space charge limited current in single GaN nanowire
Fang, Zhihua; Donatini, Fabrice; Daudin, Bruno; Pernot, Julien
2018-01-01
The electrical characterizations of individual basic GaN nanostructures, such as axial nanowire (NW) p-n junctions, are becoming indispensable and crucial for the fully controlled realization of GaN NW based devices. In this study, electron beam induced current (EBIC) measurements were performed on two single axial GaN p-n junction NWs grown by plasma-assisted molecular beam epitaxy. I-V characteristics revealed that both ohmic and space charge limited current (SCLC) regimes occur in GaN p-n junction NW. Thanks to an improved contact process, both the electric field induced by the p-n junction and the SCLC in the p-part of GaN NW were disclosed and delineated by EBIC signals under different biases. Analyzing the EBIC profiles in the vicinity of the p-n junction under 0 V and reverse bias, we deduced a depletion width in the range of 116-125 nm. Following our previous work, the acceptor N a doping level was estimated to be 2-3 × 1017 at cm-3 assuming a donor level N d of 2-3 × 1018 at cm-3. The hole diffusion length in n-GaN was determined to be 75 nm for NW #1 and 43 nm for NW #2, demonstrating a low surface recombination velocity at the m-plane facet of n-GaN NW. Under forward bias, EBIC imaging visualized the electric field induced by the SCLC close to p-side contact, in agreement with unusual SCLC previously reported in GaN NWs.
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Axial p-n junction and space charge limited current in single GaN nanowire.
Fang, Zhihua; Donatini, Fabrice; Daudin, Bruno; Pernot, Julien
2018-01-05
The electrical characterizations of individual basic GaN nanostructures, such as axial nanowire (NW) p-n junctions, are becoming indispensable and crucial for the fully controlled realization of GaN NW based devices. In this study, electron beam induced current (EBIC) measurements were performed on two single axial GaN p-n junction NWs grown by plasma-assisted molecular beam epitaxy. I-V characteristics revealed that both ohmic and space charge limited current (SCLC) regimes occur in GaN p-n junction NW. Thanks to an improved contact process, both the electric field induced by the p-n junction and the SCLC in the p-part of GaN NW were disclosed and delineated by EBIC signals under different biases. Analyzing the EBIC profiles in the vicinity of the p-n junction under 0 V and reverse bias, we deduced a depletion width in the range of 116-125 nm. Following our previous work, the acceptor N a doping level was estimated to be 2-3 × 10 17 at cm -3 assuming a donor level N d of 2-3 × 10 18 at cm -3 . The hole diffusion length in n-GaN was determined to be 75 nm for NW #1 and 43 nm for NW #2, demonstrating a low surface recombination velocity at the m-plane facet of n-GaN NW. Under forward bias, EBIC imaging visualized the electric field induced by the SCLC close to p-side contact, in agreement with unusual SCLC previously reported in GaN NWs.
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Use of GaN as a Scintillating Ionizing Radiation Detector
Wensman, Johnathan; Guardala, Noel; Mathur, Veerendra; Alasagas, Leslie; Vanhoy, Jeffrey; Statham, John; Marron, Daniel; Millett, Marshall; Marsh, Jarrod; Currie, John; Price, Jack
2017-09-01
Gallium nitride (GaN) is a III/V direct bandgap semiconductor which has been used in light emitting diodes (LEDs) since the 1990s. Currently, due to a potential for increased efficiency, GaN is being investigated as a replacement for silicon in power electronics finding potential uses ranging from data centers to electric vehicles. In addition to LEDs and power electronics though, doped GaN can be used as a gamma insensitive fast neutron detector due to the direct band-gap, light propagation properties, and response to ionizing radiations. Investigation of GaN as a semiconductor scintillator for use in a radiation detection system involves mapping the response function of the detector crystal over a range of photon and neutron energies, and measurements of light generation in the GaN crystal due to proton, alpha, and nitrogen projectiles. In this presentation we discuss the measurements made to date, and plausible interpretations of the response functions. This work funded in part by the Naval Surface Warfare Center, Carderock Division In-house Laboratory Independent Research program.
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Structural characterisation of GaN and GaN:O thin films
International Nuclear Information System (INIS)
Granville, S.; Budde, F.; Koo, A.; Ruck, B.J.; Trodahl, H.J.; Bittar, A.; Metson, J.B.; James, B.J.; Kennedy, V.J.; Markwitz, A.; Prince, K.E.
2005-01-01
In its crystalline form, the wide band-gap semiconductor GaN is of exceptional interest in the development of suitable materials for short wavelength optoelectronic devices. One of the barriers to its potential usefulness however is the large concentration of defects present even in MBE-grown material often due to the lattice mismatch of the GaN with common substrate materials. Calculations have suggested that GaN films grown with an amorphous structure retain many of the useful properties of the crystalline material, including the wide band-gap and a low density of states in the gap, and thus may be a suitable alternative to the single crystal GaN for a variety of applications. We have performed structural and compositional measurements on heavily disordered GaN thin films with and without measureable O and H concentrations grown using ion-assisted deposition. X-ray diffraction and x-ray absorption fine structure measurements show that stoichiometric films are composed of nanocrystallites of ∼3-4 nm in size and that GaN films containing O to 10 at % or greater are amorphous. Rutherford backscattering spectroscopy (RBS) was performed and nuclear reaction analysis (NRA) measurements were made to determine the elemental composition of the films and elastic recoil detection (ERD) detected the hydrogen concentrations. Secondary ion mass spectroscopy (SIMS) measurements were used to depth profile the films. X-ray photoelectron spectroscopy (XPS) measurements probed the bonding environment of the Ga in the films. (author). 2 figs., 1 tab
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Post-annealing effects on pulsed laser deposition-grown GaN thin films
International Nuclear Information System (INIS)
Cheng, Yu-Wen; Wu, Hao-Yu; Lin, Yu-Zhong; Lee, Cheng-Che; Lin, Ching-Fuh
2015-01-01
In this work, the post-annealing effects on gallium nitride (GaN) thin films grown from pulsed laser deposition (PLD) are investigated. The as-deposited GaN thin films grown from PLD are annealed at different temperatures in nitrogen ambient. Significant changes of the GaN crystal properties are observed. Raman spectroscopy is used to observe the crystallinity, the change of residual stress, and the thermal decomposition of the annealed GaN thin films. X-ray diffraction is also applied to identify the crystal phase of GaN thin films, and the surface morphology of GaN thin films annealed at different temperatures is observed by scanning electron microscopy. Through the above analyses, the GaN thin films grown by PLD undergo three stages: phase transition, stress alteration, and thermal decomposition. At a low annealing temperature, the rock salt GaN in GaN films is transformed into wurtzite. The rock salt GaN diminishes with increasing annealing temperature. At a medium annealing temperature, the residual stress of the film changes significantly from compressive strain to tensile strain. As the annealing temperature further increases, the GaN undergoes thermal decomposition and the surface becomes granular. By investigating the annealing temperature effects and controlling the optimized annealing temperature of the GaN thin films, we are able to obtain highly crystalline and strain-free GaN thin films by PLD. - Highlights: • The GaN thin film is grown on sapphire by pulsed laser deposition. • The GaN film undergoes three stages with increasing annealing temperature. • In the first stage, the film transfers from rock salt to wurtzite phase. • In the second stage, the stress in film changes from compressive to tensile. • In the final stage, the film thermally decomposes and becomes granular
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Effect of H, O intentionally doping on photoelectric properties in MOVPE-growth GaN layers
Ohkawa, Kazuhiro
2017-10-24
GaN crystal growth requires higher purity of materials. Some contaminants in NH3 gas could be the causal factor of defects in GaN crystals. These atoms act as donor or acceptor. In order to clearly demonstrate the effect of gaseous impurities such as H2O on the properties of undoped-GaN layer, high purity NH3 (N70) was used as NH3 source. The concentration of H2O in NH3 was varied at 32, 49, 75, 142, 266, 489, and 899 ppb, respectively. Under the same recipe, we deposited undoped-GaN epitaxial layer with purifier, and H2O-doped GaN series layers. As similar to the results of CO and CO2-doped GaN series, the increase tendency of carrier density changing with increasing H2O concentration. The FWHMs of XRC around (0002) remain stable, witnessing that the crystal quality of GaN layer remain good. LT (15K) PL of undoped-GaN and H2O-doped GaN were measured, the D0X emission peak intensity of all H2O-doped GaN are decreased drastically compared with undoped-GaN. H2O impurity was doped into GaN layer, which not only effects electrical properties and but also effects the radiative emission and furthermore effects PL intensity, its mechanism is discussed.
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Energy Technology Data Exchange (ETDEWEB)
Soni, Dilip [Government P G Madhav Science College, Ujjain (M P) (India); Sharma, Giriraj, E-mail: grsharma@gmail.com [SRJ Government Girls’ College, Neemuch (M P) (India); Saxena, Ajay [Government College, Garoth, Dist. Mandsaur (M P) (India); Jadhav, Akhilesh [Government J Yoganandam Chhattisgarh College, Raipur (C G) (India)
2015-07-31
An analytical study on propagation characteristics of longitudinal electro-kinetic (LEK) waves is presented. Based on multi-fluid model of plasma, we have derived a dispersion relation for LEK waves in colloid laden GaN semiconductor plasmas. It is assumed that ions are implanted to form colloids in the GaN sample. The colloids are continuously bombarded by the plasma particles and stick on them, but they acquire a net negative charge due to relatively higher mobility of electrons. It is found from the dispersion relation that the presence of charged colloids not only modifies the existing modes but also supports new novel modes of LEKWs. It is hoped that the study would enhance understanding on dispersion and absorption of LEKWs and help in singling out the appropriate configurations in which GaN crystal would be better suited for fabrication of microwave devices.
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Indian Academy of Sciences (India)
2018-05-18
May 18, 2018 ... Abstract. 4-Nitrobenzoic acid (4-NBA) single crystals were studied for their linear and nonlinear optical ... studies on the proper growth, linear and nonlinear optical ..... between the optic axes and optic sign of the biaxial crystal.
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Growth on nonpolar and semipolar GaN: The substrate dilemma
Energy Technology Data Exchange (ETDEWEB)
Wernicke, T.; Weyers, M. [Ferdinand-Braun-Institute, Berlin (Germany); Kneissl, M. [Ferdinand-Braun-Institute, Berlin (Germany); Institute of Solid State Physics, TU Berlin (Germany)
2009-07-01
Growth of nonpolar and semipolar GaN is very promising for achieving green laser diodes (LDs). However, the choice of the substrate is a difficult one: Heteroepitaxial growth on sapphire, SiC, LiAlO{sub 2} yields GaN films with a poor surface quality and high defect densities. On the other hand non- and semipolar bulk GaN substrates provide excellent crystal quality, but are so far only available in very small sizes. In this paper hetero- and homoepitaxial growth is compared. For all heteroepitaxially grown semi- and nonpolar GaN layers threading dislocations (TD) and basal plane stacking faults (BSF) can be found. There are four possible mechanisms for the generation of BSF: Growth of the N-polar basal plane, formation during nucleation at substrate steps, formation at the coalescence front of differently stacked nucleation islands, and generation at planar defects occurring in m-plane GaN on LiAlO{sub 2}. BSF induce surface roughening and are associated with partial dislocations causing nonradiative recombination. Thus they affect the performance of devices. We show that BSFs and TDs can be reduced by epitaxial lateral overgrowth resulting in several micrometer wide defect free areas. However, for LEDs larger defect-free areas are required. GaN layers grown on bulk GaN substrates exhibit a high crystal quality, but show in many cases long-range surface structures with a height of {approx}1{mu}m.
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Energy Technology Data Exchange (ETDEWEB)
Boatner, L.A.
2008-06-24
This effort addressed the technical problem of identifying and growing, on a commercial scale, suitable single-crystal substrates for the subsequent deposition of epitaxial thin films of high temperature semiconductors such as GaN/AlN. The lack of suitable lattice-matched substrate materials was one of the major problem areas in the development of semiconducting devices for use at elevated temperatures as well as practical opto-electronic devices based on Al- and GaN technology. Such lattice-matched substrates are necessary in order to reduce or eliminate high concentrations of defects and dislocations in GaN/AlN and related epitaxial thin films. This effort concentrated, in particular, on the growth of single crystals of ZnO for substrate applications and it built on previous ORNL experience in the chemical vapor transport growth of large single crystals of zinc oxide. This combined expertise in the substrate growth area was further complemented by the ability of G. Eres and his collaborators to deposit thin films of GaN on the subject substrates and the overall ORNL capability for characterizing the quality of such films. The research effort consisted of research on the growth of two candidate substrate materials in conjunction with concurrent research on the growth and characterization of GaN films, i.e. the effort combined bulk crystal growth capabilities in the area of substrate production at both ORNL and the industrial partner, Commercial Crystal Growth Laboratories (CCL), Naples, Florida, with the novel thin-film deposition techniques previously developed in the ORNL SSD.
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Ali Deeb, Manal; Ledig, Johannes; Wei, Jiandong; Wang, Xue; Wehmann, Hergo-Heinrich; Waag, Andreas
2017-08-01
Three dimensional GaN structures with different crystal facets and doping types have been investigated employing the surface photo-voltage (SPV) method to monitor illumination-induced surface charge behavior using Kelvin probe force microscopy. Various photon energies near and below the GaN bandgap were used to modify the generation of electron-hole pairs and their motion under the influence of the electric field near the GaN surface. Fast and slow processes for Ga-polar c-planes on both Si-doped n-type as well as Mg-doped p-type GaN truncated pyramid micro-structures were found and their origin is discussed. The immediate positive (for n-type) and negative (for p-type) SPV response dominates at band-to-band and near-bandgap excitation, while only the slow process is present at sub-bandgap excitation. The SPV behavior for the semi-polar facets of the p-type GaN truncated pyramids has a similar characteristic to that on its c-plane, which indicates that it has a comparable band bending and no strong influence of the polarity-induced charges is detectable. The SPV behavior of the non-polar m-facets of the Si-doped n-type part of a transferred GaN column is similar to that of a clean c-plane GaN surface during illumination. However, the SPV is smaller in magnitude, which is attributed to intrinsic surface states of m-plane surfaces and their influence on the band bending. The SPV behavior of the non-polar m-facet of the slightly Mg-doped part of this GaN column is found to behave differently. Compared to c- and r-facets of p-type surfaces of GaN-light-emitting diode micro-structures, the m-plane is more chemically stable.
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GaN based nanorods for solid state lighting
Energy Technology Data Exchange (ETDEWEB)
Li Shunfeng; Waag, Andreas [Institute of Semiconductor Technology, Braunschweig University of Technology, 38106 Braunschweig (Germany)
2012-04-01
In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.
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Principles of crystallization, and methods of single crystal growth
International Nuclear Information System (INIS)
Chacra, T.
2010-01-01
Most of single crystals (monocrystals), have distinguished optical, electrical, or magnetic properties, which make from single crystals, key elements in most of technical modern devices, as they may be used as lenses, Prisms, or grating sin optical devises, or Filters in X-Ray and spectrographic devices, or conductors and semiconductors in electronic, and computer industries. Furthermore, Single crystals are used in transducer devices. Moreover, they are indispensable elements in Laser and Maser emission technology.Crystal Growth Technology (CGT), has started, and developed in the international Universities and scientific institutions, aiming at some of single crystals, which may have significant properties and industrial applications, that can attract the attention of international crystal growth centers, to adopt the industrial production and marketing of such crystals. Unfortunately, Arab universities generally, and Syrian universities specifically, do not give even the minimum interest, to this field of Science.The purpose of this work is to attract the attention of Crystallographers, Physicists and Chemists in the Arab universities and research centers to the importance of crystal growth, and to work on, in the first stage to establish simple, uncomplicated laboratories for the growth of single crystal. Such laboratories can be supplied with equipment, which are partly available or can be manufactured in the local market. Many references (Articles, Papers, Diagrams, etc..) has been studied, to conclude the most important theoretical principles of Phase transitions,especially of crystallization. The conclusions of this study, are summarized in three Principles; Thermodynamic-, Morphologic-, and Kinetic-Principles. The study is completed by a brief description of the main single crystal growth methods with sketches, of equipment used in each method, which can be considered as primary designs for the equipment, of a new crystal growth laboratory. (author)
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A comparative study on MOVPE InN grown on Ga- and N-polarity bulk GaN
International Nuclear Information System (INIS)
Wang, W.J.; Miwa, H.; Hashimoto, A.; Yamamoto, A.
2006-01-01
The influence of substrate polarity on the growth of InN film by MOVPE was investigated using bulk GaN as a substrate. Single-crystalline In- and N-polarity InN films were obtained on Ga- and N-polarity GaN substrate, respectively. Significant difference of the morphologies between the In- and N-polarity InN films was found. For the In-polarity InN film, the morphology was similar to that grown on sapphire substrate. The film surface was consisted of grains with small facets. In contrast, for the N-polarity InN film, the surface was consisted of large hexagonal shape crystal grains with flat surface. The grain size was about 2 μm in diameter on the average, and two-dimensional growth was enhanced obviously for each crystal grain. The influence of the growth temperature on the morphology, polarity, and optical property was also investigated. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
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The controlled growth of GaN microrods on Si(111) substrates by MOCVD
Foltynski, Bartosz; Garro, Nuria; Vallo, Martin; Finken, Matthias; Giesen, Christoph; Kalisch, Holger; Vescan, Andrei; Cantarero, Andrés; Heuken, Michael
2015-03-01
In this paper, a selective area growth (SAG) approach for growing GaN microrods on patterned SiNx/Si(111) substrates by metal-organic chemical vapor deposition (MOCVD) is studied. The surface morphology, optical and structural properties of vertical GaN microrods terminated by pyramidal shaped facets (six { 10 1 bar 1} planes) were characterized using scanning electron microscopy (SEM), room temperature photoluminescence (PL) and Raman spectroscopy, respectively. Measurements revealed high-quality GaN microcolumns grown with silane support. Characterized structures were grown nearly strain-free (central frequency of Raman peak of 567±1 cm-1) with crystal quality comparable to bulk crystals (FWHM=4.2±1 cm-1). Such GaN microrods might be used as a next-generation device concept for solid-state lighting (SSL) applications by realizing core-shell InGaN/GaN multi-quantum wells (MQWs) on the n-GaN rod base.
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Nucleation of single GaN nanorods with diameters smaller than 35 nm by molecular beam epitaxy
International Nuclear Information System (INIS)
Chen, Yen-Ting; Araki, Tsutomu; Palisaitis, Justinas; Persson, Per O. Å.; Olof Holtz, Per; Birch, Jens; Chen, Li-Chyong; Chen, Kuei-Hsien; Nanishi, Yasushi
2013-01-01
Nucleation mechanism of catalyst-free GaN nanorod grown on Si(111) is investigated by the fabrication of uniform and narrow (<35 nm) nanorods without a pre-defined mask by molecular beam epitaxy. Direct evidences show that the nucleation of GaN nanorods stems from the sidewall of the underlying islands down to the Si(111) substrate, different from commonly reported ones on top of the island directly. Accordingly, the growth and density control of the nanorods is exploited by a “narrow-pass” approach that only narrow nanorod can be grown. The optimal size of surrounding non-nucleation area around single nanorod is estimated as 88 nm
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Nucleation of single GaN nanorods with diameters smaller than 35 nm by molecular beam epitaxy
Energy Technology Data Exchange (ETDEWEB)
Chen, Yen-Ting [Institute of Atomic and Molecular Sciences, Academia Sinica, 10617 Taipei, Taiwan (China); Department of Physics, Chemistry and Biology (IFM), Linköping University, S-58183 Linköping (Sweden); Araki, Tsutomu [Department of Electrical and Electronic Engineering, Ritsumeikan University, 525-8577 Shiga (Japan); Palisaitis, Justinas; Persson, Per O. Å.; Olof Holtz, Per; Birch, Jens [Department of Physics, Chemistry and Biology (IFM), Linköping University, S-58183 Linköping (Sweden); Chen, Li-Chyong [Center for Condensed Matter Sciences, National Taiwan University, 10617 Taipei, Taiwan (China); Chen, Kuei-Hsien [Institute of Atomic and Molecular Sciences, Academia Sinica, 10617 Taipei, Taiwan (China); Center for Condensed Matter Sciences, National Taiwan University, 10617 Taipei, Taiwan (China); Nanishi, Yasushi [Global Innovation Research Organization, Ritsumeikan University, 525-8577 Shiga (Japan)
2013-11-11
Nucleation mechanism of catalyst-free GaN nanorod grown on Si(111) is investigated by the fabrication of uniform and narrow (<35 nm) nanorods without a pre-defined mask by molecular beam epitaxy. Direct evidences show that the nucleation of GaN nanorods stems from the sidewall of the underlying islands down to the Si(111) substrate, different from commonly reported ones on top of the island directly. Accordingly, the growth and density control of the nanorods is exploited by a “narrow-pass” approach that only narrow nanorod can be grown. The optimal size of surrounding non-nucleation area around single nanorod is estimated as 88 nm.
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Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(lll) Substrate
International Nuclear Information System (INIS)
Wei Meng; Wang Xiaoliang; Pan Xu; Xiao Hongling; Wang Cuimei; Zhang Minglan; Wang Zhanguo
2011-01-01
This paper investigated the influence of AlGaN buffer growth temperature on strain status and crystal quality of the GaN film on Si(111) sbustrates by metal organic chemical vapor deposition. It was demonstrated by the optical microscopy that AlGaN buffer gorwth temperature had a remarkable effect on compensating tensil stress in top GaN layer and preventing the formation of cracks. X-ray diffraction and atomic force microscopy analysis showed crystal quality and surface morphology of the GaN epilayer could be improved through increasing AlGaN buffer growth temperature. 1μm crack-free GaN epilayer on Si (111) substrates was obtained with graded AlGaN buffer layer at optimized temperature of 1050 deg. C. Transmission electron microscopy analysis revealed that a significant reduction in threading dislocations was achieved in GaN epilayer.
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International Nuclear Information System (INIS)
Molnar, P.; Sittner, P.; Novak, V.; Lukas, P.
2008-01-01
A neutron single crystal diffraction method for inspecting the quality of martensite single crystals is introduced. True interface-free martensite single crystals are indispensable for, e.g. measurement of elastic constants of phases by ultrasonic techniques. The neutron diffraction method was used to detect and distinguish the presence of individual lattice correspondence variants of the 2H orthorhombic martensite phase in Cu-Al-Ni as well as to follow the activity of twinning processes during the deformation test on the martensite variant single crystals. When preparing the martensite single variant prism-shaped crystals by compression deformation method, typically a small fraction of second unwanted martensitic variant (compound twin) remains in the prism samples. Due to the very low stress (∼1 MPa) for the compound twinning in many shape memory alloys, it is quite difficult not only to deplete the martensite prisms of all internal interfaces but mainly to keep them in the martensite single variant state for a long time needed for further investigations
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Direct growth of freestanding GaN on C-face SiC by HVPE.
Tian, Yuan; Shao, Yongliang; Wu, Yongzhong; Hao, Xiaopeng; Zhang, Lei; Dai, Yuanbin; Huo, Qin
2015-06-02
In this work, high quality GaN crystal was successfully grown on C-face 6H-SiC by HVPE using a two steps growth process. Due to the small interaction stress between the GaN and the SiC substrate, the GaN was self-separated from the SiC substrate even with a small thickness of about 100 μm. Moreover, the SiC substrate was excellent without damage after the whole process so that it can be repeatedly used in the GaN growth. Hot phosphoric acid etching (at 240 °C for 30 min) was employed to identify the polarity of the GaN layer. According to the etching results, the obtained layer was Ga-polar GaN. High-resolution X-ray diffraction (HRXRD) and electron backscatter diffraction (EBSD) were done to characterize the quality of the freestanding GaN. The Raman measurements showed that the freestanding GaN film grown on the C-face 6H-SiC was stress-free. The optical properties of the freestanding GaN layer were determined by photoluminescence (PL) spectra.
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Single-crystal growth of ceria-based materials
International Nuclear Information System (INIS)
Ulbrich, Gregor
2015-01-01
In this work it could be shown that Skull-Melting is a suitable method for growing ceria single crystals. Twenty different ceria-based single crystals could be manufactured. It was possible to dope ceria single crystals with Gd, Sm, Y, Zr, Ti, Ta, and Pr in different concentrations. Also co-doping with the named metals was realized. However, there remain some problems for growing ceria-based single crystals by Skull-Melting. As ignition metal zirconium was used because no ceria-based material works well. For that reason all single crystals show small zirconium contamination. Another problem is the formation of oxygen by the heat-induced reduction of ceria during the melting process. Because of that the skull of sintered material is often destroyed by gas pressure. This problem had to be solved individually for every single crystal. The obtained single crystals were characterized using different methods. To ensure the single crystal character the y were examined by Laue diffraction. All manufactured crystals are single crystals. Also powder diffraction patterns of the milled and oxidized samples were measured. For the determination of symmetry and metric the structural parameters were analyzed by the Rietveld method. All synthesized materials crystallize in space group Fm-3m known from calcium fluoride. The cubic lattice parameter a was determined for all crystals. In the case of series with different cerium and zirconium concentrations a linear correlation between cerium content and cubic lattice parameter was detected. The elemental composition was determined by WDX. All crystals show a homogeneous elemental distribution. The oxygen content was calculated because the WDX method isn't useful for determination.
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Homoepitaxial growth of a-plane GaN layers by reaction between Ga2O vapor and NH3 gas
International Nuclear Information System (INIS)
Sumi, Tomoaki; Taniyama, Yuuki; Takatsu, Hiroaki; Juta, Masami; Kitamoto, Akira; Imade, Mamoru; Yoshimura, Masashi; Mori, Yusuke; Isemura, Masashi
2015-01-01
Growth of high-quality a-plane GaN layers was performed by reaction between Ga 2 O vapor and NH 3 gas at a high temperature. Smooth a-plane GaN epitaxial layers were obtained on a-plane GaN seed substrates sliced from thick c-plane GaN crystals. Growth rate increased with increasing Ga 2 O partial pressure. An a-plane GaN layer with a growth rate of 48 μm/h was obtained. The X-ray rocking curve (XRC) measurement showed that the full widths at half maximum (FWHMs) of GaN(112-bar0) with the incident beam parallel and perpendicular to the [0001] direction were 29–43 and 29–42 arcsec, respectively. Secondary ion mass spectrometry (SIMS) measurement revealed that oxygen concentration decreased at a high temperature. These results suggest that growth of a-GaN layers using Ga 2 O vapor and NH 3 gas at a high temperature enables the generation of high-quality crystals. (author)
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2017-10-09
for AGG should be minimal. For this purpose, the seeds for AGG may also be provided externally. This process is called the solid-state single...bonding process . Figure 31 shows (a) the growth of one large single crystal from one small single crystal seed as well as (b) the growth of one...one bi-crystal seed : One large bi-crystal can be grown from one small bi-crystal by SSCG process . Fig. 32. Diffusion bonding process for
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Study of electrical properties of single GaN nanowires grown by MOCVD with a Ti mask
International Nuclear Information System (INIS)
Vasiliev, A A; Mozharov, A M; Mukhin, I S; Rozhavskaya, M M; Lundin, V V
2016-01-01
We researched electrical characteristics of GaN nanowires (NWs) grown by MOCVD through solid titanium film. The technology of creating the ohmic contacts and MESFET structure on single NWs has been developed. The optimal annealing temperature of contacts has been found and conductivity structure, the free carrier concentration and mobility has been evaluated. (paper)
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Hydrogen-surfactant-assisted coherent growth of GaN on ZnO substrate
Zhang, Jingzhao; Zhang, Yiou; Tse, Kinfai; Zhu, Junyi
2018-01-01
Heterostructures of wurtzite based devices have attracted great research interest because of the tremendous success of GaN in light emitting diodes (LED) industry. High-quality GaN thin films on inexpensive and lattice matched ZnO substrates are both commercially and technologically desirable. Intrinsic wetting conditions, however, forbid such heterostructures as the energy of ZnO polar surfaces is much lower than that of GaN polar surfaces, resulting in 3D growth mode and poor crystal quality. Based on first-principles calculations, we propose the use of surfactant hydrogen to dramatically alter the growth mode of the heterostructures. Stable H-involved surface configurations and interfaces are investigated with the help of our newly developed modelling techniques. The temperature and chemical potential dependence of our proposed strategy, which is critical in experiments, is predicted by applying the experimental Gibbs free energy of H2. Our thermodynamic wetting condition analysis is a crucial step for the growth of GaN on ZnO, and we find that introducing H will not degrade the stability of ZnO substrate. This approach will allow the growth of high-quality GaN thin films on ZnO substrates. We believe that our new strategy may reduce the manufactory cost, improve the crystal quality, and improve the efficiency of GaN-based devices.
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Energy Technology Data Exchange (ETDEWEB)
Kim, Seong-Woo; Suzuki, Toshimasa [Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro, Saitama, 345-8501 (Japan); Aida, Hideo [NAMIKI Precision Jewel Co. Ltd., 3-8-22 Shinden, Adachi-ku, Tokyo, 123-8511 (Japan)
2005-05-01
We have studied the effect of a slight mis-orientation angle on surface and crystal quality of GaN thin films grown under different carrier gas conditions. Two types of carrier gas conditions were applied to the growth. One was pure H{sub 2} and the other was mixed N{sub 2}/H{sub 2}. As the result, we found dependence of surface and crystal quality of GaN thin films on the substrate mis-orientation angle, and they indicated almost the same tendency under both growth conditions. Therefore, it was confirmed that mis-orientation angle of sapphire substrate was one of the most critical factors for GaN thin films. Then, the effect of the additional N{sub 2} into the conventional H{sub 2} carrier gas was studied, and we found that the conversion of carrier gas from the conventional H{sub 2} to N{sub 2}/H{sub 2} mixture was effective against degradation of GaN crystallinity at any mis-orientation angle. Considering that the crystal quality of GaN thin films became insensitive to mis-orientation angle as the condition became more suitable for GaN growth, the optimal substrate mis-orientation angle was consequently decided to be approximately 0.15 from the morphological aspect. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
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Improved performance of GaN based light emitting diodes with ex-situ sputtered AlN nucleation layers
Directory of Open Access Journals (Sweden)
Shuo-Wei Chen
2016-04-01
Full Text Available The crystal quality, electrical and optical properties of GaN based light emitting diodes (LEDs with ex-situ sputtered physical vapor deposition (PVD aluminum nitride (AlN nucleation layers were investigated. It was found that the crystal quality in terms of defect density and x-ray diffraction linewidth was greatly improved in comparison to LEDs with in-situ low temperature GaN nucleation layer. The light output power was 3.7% increased and the reverse bias voltage of leakage current was twice on LEDs with ex-situ PVD AlN nucleation layers. However, larger compressive strain was discovered in LEDs with ex-situ PVD AlN nucleation layers. The study shows the potential and constrain in applying ex-situ PVD AlN nucleation layers to fabricate high quality GaN crystals in various optoelectronics.
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Free-standing nanomechanical and nanophotonic structures in single-crystal diamond
Burek, Michael John
Realizing complex three-dimensional structures in a range of material systems is critical to a variety of emerging nanotechnologies. This is particularly true of nanomechanical and nanophotonic systems, both relying on free-standing small-scale components. In the case of nanomechanics, necessary mechanical degrees of freedom require physically isolated structures, such as suspended beams, cantilevers, and membranes. For nanophotonics, elements like waveguides and photonic crystal cavities rely on light confinement provided by total internal reflection or distributed Bragg reflection, both of which require refractive index contrast between the device and surrounding medium (often air). Such suspended nanostructures are typically fabricated in a heterolayer structure, comprising of device (top) and sacrificial (middle) layers supported by a substrate (bottom), using standard surface nanomachining techniques. A selective, isotropic etch is then used to remove the sacrificial layer, resulting in free-standing devices. While high-quality, crystalline, thin film heterolayer structures are readily available for silicon (as silicon-on-insulator (SOI)) or III-V semiconductors (i.e. GaAs/AlGaAs), there remains an extensive list of materials with attractive electro-optic, piezoelectric, quantum optical, and other properties for which high quality single-crystal thin film heterolayer structures are not available. These include complex metal oxides like lithium niobate (LiNbO3), silicon-based compounds such as silicon carbide (SiC), III-V nitrides including gallium nitride (GaN), and inert single-crystals such as diamond. Diamond is especially attractive for a variety of nanoscale technologies due to its exceptional physical and chemical properties, including high mechanical hardness, stiffness, and thermal conductivity. Optically, it is transparent over a wide wavelength range (from 220 nm to the far infrared), has a high refractive index (n ~ 2.4), and is host to a vast
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Structure of single-chain single crystals of isotactic polystyrene and their radiation resistance
International Nuclear Information System (INIS)
Bu Haishan; Cao Jie; Xu Shengyong; Zhang Ze
1997-01-01
The structure of the single-chain single crystals of isotactic polystyrene (i-PS) was investigated by electron diffraction (ED) and high resolution electron microscopy (HREM). The nano-scale single-chain single crystals were found to be very stable to electron irradiation. According to the unit cell of i-PS crystals, the reflection rings in ED pattern and the lattice fringes in HREM images could be indexed, but the lower-index diffractions were not found. It is proposed that the single-chain single crystals are very small, thus secondary electrons may be allowed to escape and radiation damage is highly reduced, and that there are less lower-index lattice planes in the single-chain single crystals to provide sufficient diffraction intensity for recording. HREM images can be achieved at room temperature in the case of single-chain single crystals because of its stability to electron irradiation, therefore, this might be a novel experimental approach to the study of crystal structure of macromolecules
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Electrical conduction along dislocations in plastically deformed GaN
Energy Technology Data Exchange (ETDEWEB)
Kamimura, Y; Yokoyama, T; Oiwa, H; Edagawa, K [Institute of Industrial Science, the University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan); Yonenaga, I, E-mail: yasushi@iis.u-tokyo.ac.jp [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577 (Japan)
2009-07-15
Electrical conduction along dislocations in plastically deformed n-GaN single crystals has been investigated by scanning spread resistance microscopy (SSRM). In the SSRM images, many conductive spots have been observed, which correspond to electrical conduction along the dislocations introduced by deformation. Here, the introduced dislocations are b=(a/3)<1overline 210> edge dislocations parallel to the [0001] direction. The current values at the spots normalized to the background current value are larger than 100. Previous works have shown that grown-in edge dislocations in GaN are nonconductive. The high conductivity of the deformation-introduced edge dislocations in the present work suggests that the conductivity depends sensitively on the dislocation core structure.
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Covalent bonding and J-J mixing effects on the EPR parameters of Er3+ions in GaN crystal
Institute of Scientific and Technical Information of China (English)
柴瑞鹏; 李隆; 梁良; 庞庆
2016-01-01
The EPR parameters of trivalent Er3+ ions doped in hexagonal GaN crystal have been studied by diagonalizing the 364×364 complete energy matrices. The results indicate that the resonance ground states may be derived from the Kramers doubletΓ6. The EPR g-factors may be ascribed to the stronger covalent bonding and nephelauxetic effects compared with other rare-earth doped complexes, as a result of the mismatch of ionic radii of the impurity Er3+ion and the replaced Ga3+ion apart from the intrinsic covalency of host GaN. Furthermore, the J–J mixing effects on the EPR parameters from the high-lying manifolds have been evaluated. It is found that the dominant J–J mixing contribution is from the manifold 2K15/2, which accounts for about 2.5%. The next important J–J contribution arises from the crystal–field mixture between the ground state 4I15/2 and the first excited state 4I13/2, and is usually less than 0.2%. The contributions from the rest states may be ignored.
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Polarity Control of Heteroepitaxial GaN Nanowires on Diamond.
Hetzl, Martin; Kraut, Max; Hoffmann, Theresa; Stutzmann, Martin
2017-06-14
Group III-nitride materials such as GaN nanowires are characterized by a spontaneous polarization within the crystal. The sign of the resulting sheet charge at the top and bottom facet of a GaN nanowire is determined by the orientation of the wurtzite bilayer of the different atomic species, called N and Ga polarity. We investigate the polarity distribution of heteroepitaxial GaN nanowires on different substrates and demonstrate polarity control of GaN nanowires on diamond. Kelvin Probe Force Microscopy is used to determine the polarity of individual selective area-grown and self-assembled nanowires over a large scale. At standard growth conditions, mixed polarity occurs for selective GaN nanowires on various substrates, namely on silicon, on sapphire and on diamond. To obtain control over the growth orientation on diamond, the substrate surface is modified by nitrogen and oxygen plasma exposure prior to growth, and the growth parameters are adjusted simultaneously. We find that the surface chemistry and the substrate temperature are the decisive factors for obtaining control of up to 93% for both polarity types, whereas the growth mode, namely selective area or self-assembled growth, does not influence the polarity distribution significantly. The experimental results are discussed by a model based on the interfacial bonds between the GaN nanowires, the termination layer, and the substrate.
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Defect analysis in GaN films of HEMT structure by cross-sectional cathodoluminescence
Isobe, Yasuhiro; Hung, Hung; Oasa, Kohei; Ono, Tasuku; Onizawa, Takashi; Yoshioka, Akira; Takada, Yoshiharu; Saito, Yasunobu; Sugiyama, Naoharu; Tsuda, Kunio; Sugiyama, Toru; Mizushima, Ichiro
2017-06-01
Defect analysis of GaN films in high electron mobility transistor (HEMT) structures by cross-sectional cathodoluminescence (X-CL) is demonstrated as a useful technique for improving the current collapse of GaN-HEMT devices, and the relationship between crystal quality and device characteristics is also investigated. The crystal quality of intrinsic-GaN (i-GaN) and carbon-doped GaN produced clearly different peak intensities of blue luminescence (BL), yellow luminescence (YL), and band-edge emission (BE), which is independently detected by X-CL. Current collapse in GaN-HEMT devices is found to be determined by the BL/BE and YL/BE ratios at the top of the i-GaN layer, which is close to the channel. Moreover, the i-GaN thickness required in order to minimize the BL/BE and YL/BE ratios and the thickness dependency of GaN for minimizing the BL/BE and YL/BE ratios depending on the growth conditions can be evaluated by X-CL. However, there is no correlation between current collapse in GaN-HEMT devices and the YL/BE ratio by conventional photoluminescence because HEMT devices consist of multiple GaN layers and the YL signal is detected from the carbon-doped GaN layer. Thus, the X-CL analysis method is a useful technique for device design in order to suppress current collapse.
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Growth of single crystals of BaFe12O19 by solid state crystal growth
International Nuclear Information System (INIS)
Fisher, John G.; Sun, Hengyang; Kook, Young-Geun; Kim, Joon-Seong; Le, Phan Gia
2016-01-01
Single crystals of BaFe 12 O 19 are grown for the first time by solid state crystal growth. Seed crystals of BaFe 12 O 19 are buried in BaFe 12 O 19 +1 wt% BaCO 3 powder, which are then pressed into pellets containing the seed crystals. During sintering, single crystals of BaFe 12 O 19 up to ∼130 μm thick in the c-axis direction grow on the seed crystals by consuming grains from the surrounding polycrystalline matrix. Scanning electron microscopy-energy dispersive spectroscopy analysis shows that the single crystal and the surrounding polycrystalline matrix have the same chemical composition. Micro-Raman scattering shows the single crystal to have the BaFe 12 O 19 structure. The optimum growth temperature is found to be 1200 °C. The single crystal growth behavior is explained using the mixed control theory of grain growth. - Highlights: • Single crystals of BaFe 12 O 19 are grown by solid state crystal growth. • A single crystal up to ∼130 μm thick (c-axis direction) grows on the seed crystal. • The single crystal and surrounding ceramic matrix have similar composition. • Micro-Raman scattering shows the single crystal has the BaFe 12 O 19 structure.
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Relaxor-PT Single Crystal Piezoelectric Sensors
Directory of Open Access Journals (Sweden)
Xiaoning Jiang
2014-07-01
Full Text Available Relaxor-PbTiO3 piezoelectric single crystals have been widely used in a broad range of electromechanical devices, including piezoelectric sensors, actuators, and transducers. This paper reviews the unique properties of these single crystals for piezoelectric sensors. Design, fabrication and characterization of various relaxor-PT single crystal piezoelectric sensors and their applications are presented and compared with their piezoelectric ceramic counterparts. Newly applicable fields and future trends of relaxor-PT sensors are also suggested in this review paper.
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Preparation of TiC single crystals
International Nuclear Information System (INIS)
Scheerer, B.; Fink, J.; Reichardt, W.
1975-07-01
TiC single crystals were prepared by vertical zone melting for measurements of the phonon dispersion by inelastic neutron scattering. The influence of the starting material and of the growing conditions on the growth of the crystal were studied. The crystals were characterized by chemical methods, EMX and neutron diffraction. It was possible to grow single crystals with a volume of up to 0.6 cm 3 and mosaic spread of less then 0.4 0 . (orig.) [de
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Effect of annealing time and NH3 flow on GaN films deposited on amorphous SiO2 by MOCVD
Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Xu, Bingshe
2018-05-01
GaN polycrystalline films were successfully grown on amorphous SiO2 by metal-organic chemical vapour deposition to fabricate transferable devices using inorganic films. Field-emission scanning electron microscopy images show that by prolonging the annealing time, re-evaporation is enhanced, which reduced the uniformity of the nucleation layer and GaN films. X-ray diffraction patterns indicate that the decomposition rate of the nucleation layer increases when the annealing flow rate of NH3 is 500 sccm, which makes the unstable plane and amorphous domains decompose rapidly, thereby improving the crystallinity of the GaN films. Photoluminescence spectra also indicate the presence of fewer defects when the annealing flow rate of NH3 is 500 sccm. The excellent crystal structure of the GaN films grown under optimized conditions was revealed by transmission electron microscopy analysis. More importantly, the crystal structure and orientation of GaN grown on SiO2 are the same as that of GaN grown on conventional sapphire substrate when a buffer layer is used. This work can aid in the development of transferable devices using GaN films.
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Electrically Anisotropic Layered Perovskite Single Crystal
Li, Ting-You
2016-04-01
Organic-inorganic hybrid perovskites (OIHPs), which are promising materials for electronic and optoelectronic applications (1-10), have made into layered organic-inorganic hybrid perovskites (LOIHPs). These LOIHPs have been applied to thin-film transistors, solar cells and tunable wavelength phosphors (11-18). It is known that devices fabricated with single crystal exhibit the superior performance, which makes the growth of large-sized single crystals critical for future device applications (19-23). However, the difficulty in growing large-sized LOIHPs single crystal with superior electrical properties limits their practical applications. Here, we report a method to grow the centimeter-scaled LOIHP single crystal of [(HOC2H4NH3)2PbI4], demonstrating the potentials in mass production. After that, we reveal anisotropic electrical and optoelectronic properties which proved the carrier propagating along inorganic framework. The carrier mobility of in-inorganic-plane (in-plane) devices shows the average value of 45 cm2 V–1 s–1 which is about 100 times greater than the record of LOIHP devices (15), showing the importance of single crystal in device application. Moreover, the LOIHP single crystals show its ultra-short carrier lifetime of 42.7 ps and photoluminescence quantum efficiency (PLQE) of 25.4 %. We expect this report to be a start of LOIHPs for advanced applications in which the anisotropic properties are needed (24-25), and meets the demand of high-speed applications and fast-response applications.
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Individual GaN nanowires exhibit strong piezoelectricity in 3D.
Minary-Jolandan, Majid; Bernal, Rodrigo A; Kuljanishvili, Irma; Parpoil, Victor; Espinosa, Horacio D
2012-02-08
Semiconductor GaN NWs are promising components in next generation nano- and optoelectronic systems. In addition to their direct band gap, they exhibit piezoelectricity, which renders them particularly attractive in energy harvesting applications for self-powered devices. Nanowires are often considered as one-dimensional nanostructures; however, the electromechanical coupling leads to a third rank tensor that for wurtzite crystals (GaN NWs) possesses three independent coefficients, d(33), d(13), and d(15). Therefore, the full piezoelectric characterization of individual GaN NWs requires application of electric fields in different directions and measurements of associated displacements on the order of several picometers. In this Letter, we present an experimental approach based on scanning probe microscopy to directly quantify the three-dimensional piezoelectric response of individual GaN NWs. Experimental results reveal that GaN NWs exhibit strong piezoelectricity in three dimensions, with up to six times the effect in bulk. Based on finite element modeling, this finding has major implication on the design of energy harvesting systems exhibiting unprecedented levels of power density production. The presented method is applicable to other piezoelectric NW materials as well as wires manufactured along different crystallographic orientations. © 2011 American Chemical Society
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Elafandy, Rami T.
2014-04-01
Despite the recent progress in gallium nitride (GaN) growth technology, the excessively high threading dislocation (TD) density within the GaN crystal, caused by the reliance on heterogeneous substrates, impedes the development of high-efficiency, low-cost, GaN-based heterostructure devices. For the first time, the chemical exfoliation of completely TD-free, single-crystalline, ultrathin (tens of nanometers) GaN nanomembranes is demonstrated using UV-assisted electroless chemical etching. These nanomembranes can act as seeding layers for subsequent overgrowth of high-quality GaN. A model is proposed, based on scanning and transmission electron microscopy as well as optical measurements to explain the physical processes behind the formation of the GaN nanomembranes. These novel nanomembranes, once transferred to other substrates, present a unique and technologically attractive path towards integrating high-efficiency GaN optical components along with silicon electronics. Interestingly, due to their nanoscale thickness and macroscopic sizes, these nanomembranes may enable the production of flexible GaN-based optoelectronics. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Crystal growth and scintillation properties of Pr-doped SrI2 single crystals
Yokota, Yuui; Ito, Tomoki; Yoshino, Masao; Yamaji, Akihiro; Ohashi, Yuji; Kurosawa, Shunsuke; Kamada, Kei; Yoshikawa, Akira
2018-04-01
Pr-doped SrI2 (Pr:SrI2) single crystals with various Pr concentrations were grown by the halide-micro-pulling-down (H-μ-PD) method, and the scintillation properties were investigated. Pr1%:SrI2 single crystal with high transparency could be grown by the H-μ-PD method while Pr2, 3 and 5%:SrI2 single crystals included some cracks and opaque parts. In the photoluminescence spectrum of the Pr1%:SrI2 single crystal, an emission peak originated from the Pr3+ ion was observed around 435 nm while the radioluminescence spectra showed an emission peak around 535 nm for the undoped SrI2 and Pr:SrI2 single crystals. Light yields of Pr1, 2, 3 and 5%:SrI2 single crystals under γ-ray irradiation were 7700, 8700, 7200 and 6700 photons/MeV, respectively. Decay times of Pr1 and 2%:SrI2 single crystals under γ-ray irradiation were 55.9 and 35.0 ns of the fast decay component, and 435 and 408 ns of the slow decay component, respectively.
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Nanowires and nanotubes of BN, GaN and Si3N4
International Nuclear Information System (INIS)
Deepak, F.L.; Gundiah, G.; Govindaraj, A.; Rao, C.N.
2002-01-01
Simple methods of synthesizing nanotubes and nanowires of boron nitride, gallium nitride and silicon nitride have been investigated. The nanotubes and nanowires have been examined by electron microscopy and other techniques. In the case of BN, activated carbon or multi-walled carbon nanotubes (MWNTs) was heated with boric acid in the presence of NH 3 . With activated carbon, BN nanowires constitute the primary products, but good yields of BN nanotubes are obtained with MWNTs. Aligned BN nanotubes are obtained when aligned MWNTs are employed as the starting material suggesting templating role of carbon nanotubes. Single crystal gallium nitride nanowires have been obtained by heating carbon nanotubes coated with gallium acetylacetonate in NH 3 vapor at 910 o C. Single walled carbon nanotubes were used as templated to reduce the diameter of the GaN nanowires. The growth direction of the GaN nanowires is nearly perpendicular to the [100] planes and the nanowires exhibit satisfactory photoluminescence spectra. Si 3 N 4 nanowires have been synthesized by heating multi-walled carbon nanotubes with silica gel at 1360 o C in an atmosphere of NH 3 . Si 3 N 4 nanotubes are found occasionally when aligned multi-walled nanotubes are employed as templates. (author)
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Heteroepitaxial growth of basal plane stacking fault free a-plane GaN
Energy Technology Data Exchange (ETDEWEB)
Wieneke, Matthias; Hempel, Thomas; Noltemeyer, Martin; Witte, Hartmut; Dadgar, Armin; Blaesing, Juergen; Christen, Juergen; Krost, Alois [Otto-von-Guericke Universitaet Magdeburg, FNW/IEP, Magdeburg (Germany)
2010-07-01
Growth of light emitting quantum-wells based on a-plane GaN is a possibility to reduce or even to avoid polarization correlated luminescence red shift and reduction of radiative recombination efficiency. But until now heteroepitaxially grown a-plane GaN films are characterized by a poor crystalline quality expressed by a high density of basal plane stacking faults (BSF) and partial dislocations. We present Si doped a-plane GaN films grown on r-plane sapphire substrates by metal organic vapor phase epitaxy using high temperature AlGaN nucleation layers. FE-SEM images revealed three dimensionally grown GaN crystallites sized up to tenth micrometer in the basal plane and a few tenth micrometers along the c-axes. Though, the full width at half maxima of the X-ray diffraction {omega}-scans of the in-plane GaN(1 anti 100) and GaN(0002) Bragg reflections exhibited a very high crystal quality. Furthermore, luminescence spectra were dominated by near band gap emission, while there was no separated peak of the basal plane stacking fault. In summary we present heteroepitaxially grown a-plane GaN without an evidence of basal plane stacking faults in X-ray diffraction measurements and luminescence spectra.
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Electrically Anisotropic Layered Perovskite Single Crystal
Li, Ting-You
2016-01-01
-23). However, the difficulty in growing large-sized LOIHPs single crystal with superior electrical properties limits their practical applications. Here, we report a method to grow the centimeter-scaled LOIHP single crystal of [(HOC2H4NH3)2PbI4], demonstrating
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Epitaxy of GaN on silicon-impact of symmetry and surface reconstruction
International Nuclear Information System (INIS)
Dadgar, A; Schulze, F; Wienecke, M; Gadanecz, A; Blaesing, J; Veit, P; Hempel, T; Diez, A; Christen, J; Krost, A
2007-01-01
GaN-on-silicon is a low-cost alternative to growth on sapphire or SiC. Today epitaxial growth is usually performed on Si(111), which has a threefold symmetry. The growth of single crystalline GaN on Si(001), the material of the complementary metal oxide semiconductor (CMOS) industry, is more difficult due to the fourfold symmetry of this Si surface leading to two differently aligned domains. We show that breaking the symmetry to achieve single crystalline growth can be performed, e.g. by off-oriented substrates to achieve single crystalline device quality GaN layers. Furthermore, an exotic Si orientation for GaN growth is Si(110), which we show is even better suited as compared to Si(111) for the growth of high quality GaN-on-silicon with a nearly threefold reduction in the full width at half maximum (FWHM) of the (1 1-bar 0 0)ω-scan. It is found that a twofold surface symmetry is in principal suitable for the growth of single crystalline GaN on Si
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Study on the influence of annealing effects in GaN VPE
International Nuclear Information System (INIS)
Furtado, M.
1983-06-01
The effects of annealing that occur during VPE growth of GaN were investigated. GaN powder (and epilayers) samples were annealed in Ar, N 2 , H 2 , NH 3 , HC1 + N 2 and HC1 + H 2 (N 2 , H 2 and HC1 + N 2 ), respectively; under a range of experimental conditions of interest for preparing electroluminescent devices. Good surface appearence Zn doped epilayers were also used under N 2 in order to investigate surface morphology changes due to thermal decomposition. It was found that GaN reacts with H 2 , remains stable under NH 3 , and the effects of thermal decomposition are somewhat enhanced with HC1. The epilayers' behaviour under thermal decomposition and HC1 are interpreted by the greater stability of the (0001) crystal plane, which accounts for the improvement of the surface quality under special growth conditions. Significant observations are reported concerning GaN decomposition in different ambients [pt
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Properties of single crystal beta''-aluminas
International Nuclear Information System (INIS)
Bates, J.B.; Brown, G.M.; Kaneda, T.; Brundage, W.E.; Wang, J.C.; Engstrom, H.
1979-01-01
Large single crystals of sodium beta''-alumina were grown by slow evaporation of Na 2 O at 1690 0 C from a mixture of Na 2 CO 3 , MgO, and Al 2 O 3 . Polarized Raman measurements were made on the Na β'' single crystals and on single crystals of Li, K, Rb, and Ag β'' prepared by ion exchange of Na β''. The low frequency Raman spectra of Na, K, Rb, and Ag β'' contained four or more bands due to vibrations of the mobile cations. These results were analyzed by assuming the spectra to be due to the normal modes of a defect cluster consisting of a cation vacancy surrounded by three cations. From model calculations, the Raman band of Na β'' at 33 cm -1 is assigned to the attempt mode for diffusion of Na + ions. The structure of a Ag β'' single crystal was investigated by neutron diffraction, and 20% of the Ag + ion sites were found to be vacant
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Ultra-large single crystals by abnormal grain growth.
Kusama, Tomoe; Omori, Toshihiro; Saito, Takashi; Kise, Sumio; Tanaka, Toyonobu; Araki, Yoshikazu; Kainuma, Ryosuke
2017-08-25
Producing a single crystal is expensive because of low mass productivity. Therefore, many metallic materials are being used in polycrystalline form, even though material properties are superior in a single crystal. Here we show that an extraordinarily large Cu-Al-Mn single crystal can be obtained by abnormal grain growth (AGG) induced by simple heat treatment with high mass productivity. In AGG, the sub-boundary energy introduced by cyclic heat treatment (CHT) is dominant in the driving pressure, and the grain boundary migration rate is accelerated by repeating the low-temperature CHT due to the increase of the sub-boundary energy. With such treatment, fabrication of single crystal bars 70 cm in length is achieved. This result ensures that the range of applications of shape memory alloys will spread beyond small-sized devices to large-scale components and may enable new applications of single crystals in other metallic and ceramics materials having similar microstructural features.Growing large single crystals cheaply and reliably for structural applications remains challenging. Here, the authors combine accelerated abnormal grain growth and cyclic heat treatments to grow a superelastic shape memory alloy single crystal to 70 cm.
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Isotopically pure single crystal epitaxial diamond films and their preparation
International Nuclear Information System (INIS)
Banholzer, W.F.; Anthony, T.R.; Williams, D.M.
1992-01-01
The present invention is directed to the production of single crystal diamond consisting of isotopically pure carbon-12 or carbon-13. In the present invention, isotopically pure single crystal diamond is grown on a single crystal substrate directly from isotopically pure carbon-12 or carbon-13. One method for forming isotopically pure single crystal diamond comprises the steps of placing in a reaction chamber a single substrate heated to an elevated diamond forming temperature. Another method for forming isotopically pure single crystal diamond comprises diffusing isotopically pure carbon-12 or carbon-13 through a metallic catalyst under high pressure to a region containing a single crystal substrate to form an isotopically pure single crystal diamond layer on said single crystal substrate
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Huang, Kai; Jia, Qi; You, Tiangui; Zhang, Runchun; Lin, Jiajie; Zhang, Shibin; Zhou, Min; Zhang, Bo; Yu, Wenjie; Ou, Xin; Wang, Xi
2017-11-08
Die-to-wafer heterogeneous integration of single-crystalline GaN film with CMOS compatible Si(100) substrate using the ion-cutting technique has been demonstrated. The thermodynamics of GaN surface blistering is in-situ investigated via a thermal-stage optical microscopy, which indicates that the large activation energy (2.5 eV) and low H ions utilization ratio (~6%) might result in the extremely high H fluence required for the ion-slicing of GaN. The crystalline quality, surface topography and the microstructure of the GaN films are characterized in detail. The full width at half maximum (FWHM) for GaN (002) X-ray rocking curves is as low as 163 arcsec, corresponding to a density of threading dislocation of 5 × 10 7 cm -2 . Different evolution of the implantation-induced damage was observed and a relationship between the damage evolution and implantation-induced damage is demonstrated. This work would be beneficial to understand the mechanism of ion-slicing of GaN and to provide a platform for the hybrid integration of GaN devices with standard Si CMOS process.
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Energy Technology Data Exchange (ETDEWEB)
Tendille, Florian, E-mail: florian.tendille@crhea.cnrs.fr; Vennéguès, Philippe; De Mierry, Philippe [CRHEA - CNRS (Centre de Recherche sur l' Hétéro-Epitaxie et ses Applications), Rue Bernard Gregory, Parc de Sophia Antipolis, 06560 Valbonne (France); Martin, Denis; Grandjean, Nicolas [Institute of Physics, EPFL, CH-1015 Lausanne (Switzerland)
2016-08-22
Semipolar GaN crystal stripes larger than 100 μm with dislocation densities below 5 × 10{sup 6} cm{sup −2} are achieved using a low cost fabrication process. An original sapphire patterning procedure is proposed, enabling selective growth of semipolar oriented GaN stripes while confining the defects to specific areas. Radiative and non-radiative crystalline defects are investigated by cathodoluminescence and can be correlated to the development of crystal microstructure during the growth process. A dislocation reduction mechanism, supported by transmission electron microscopy, is proposed. This method represents a step forward toward low-cost quasi-bulk semipolar GaN epitaxial platforms with an excellent structural quality which will allow for even more efficient III-nitride based devices.
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Confinement stabilises single crystal vaterite rods.
Schenk, AS; Albarracin, EJ; Kim, YY; Ihli, J; Meldrum, FC
2014-01-01
Single-crystals of vaterite, the least-stable anhydrous polymorph of CaCO3, are rare in biogenic and synthetic systems. We here describe the synthesis of high aspect ratio single crystal vaterite rods under additive-free conditions by precipitating CaCO3 within the cylindrical pores of track-etch membranes.
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Reshock and release response of aluminum single crystal
International Nuclear Information System (INIS)
Huang, H.; Asay, J. R.
2007-01-01
Reshock and release experiments were performed on single crystal aluminum along three orientations and on polycrystalline 1050 aluminum with 50 μm grain size at shock stresses of 13 and 21 GPa to investigate the mechanisms for previously observed quasielastic recompression behavior. Particle velocity profiles obtained during reshocking both single crystals and polycrystalline aluminum from initial shock stresses of 13-21 GPa show similar quasielastic recompression behavior. Quasielastic release response is also observed in all single crystals, but the magnitude of the effect is crystal orientation dependent, with [111] and [110] exhibiting more ideal elastic-plastic release for unloading from the shocked state than for the [100] orientation and polycrystalline aluminum. The quasielastic response of 1050 aluminum is intermediate to that of the [100] and [111] orientations. Comparison of the wave profiles obtained for both unloading and reloading of single crystals and polycrystalline 1050 aluminum from shocked states suggests that the observed quasielastic response of polycrystalline aluminum results from the averaging response of single crystals for shock propagation along different orientations, and that the response of 1050 aluminum with large grain boundaries is not significantly different from the results obtained on single crystal aluminum. The yield strength of the single crystals and 1050 aluminum is found to increase with shock stress, which is consistent with previous results [H. Huang and I. R. Asay, J. Appl. Phys. 98, 033524 (2005)
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Controlling charges distribution at the surface of a single GaN nanowire by in-situ strain
Directory of Open Access Journals (Sweden)
Xiao Chen
2017-08-01
Full Text Available Effect of the strain on the charge distribution at the surface of a GaN semiconductor nanowire (NW has been investigated inside transmission electron microscope (TEM by in-situ off-axis electron holography. The outer and inner surfaces of the NW bent axially under compression of two Au electrodes were differently strained, resulting in difference of their Fermi levels. Consequently, the free electrons flow from the high Fermi level to the low level until the two Fermi levels aligned in a line. The potential distributions induced by charge redistribution in the two vacuum sides of the bent NW were examined respectively, and the opposite nature of the bounded charges on the outer and inner surfaces of the bent NW was identified. The results provide experimental evidence that the charge distribution at the surfaces of a single GaN NW can be controlled by different strains created along the NW.
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A new system for sodium flux growth of bulk GaN. Part II: in situ investigation of growth processes
Von Dollen, Paul
2016-09-09
We report recent results of bulk GaN crystal growth using the sodium flux method in a new crucible-free growth system. We observed a (0001) Ga face (+c-plane) growth rate >50 µm/h for growth at a N2 overpressure of ~5 MPa and 860 °C, which is the highest crystal growth rate reported for this technique to date. Omega X-ray rocking curve (ω-XRC) measurements indicated the presence of multiple grains, though full width at half maximum (FWHM) values for individual peaks were <100 arcseconds. Oxygen impurity concentrations as measured by secondary ion mass spectroscopy (SIMS) were >1020 atoms/cm3. By monitoring the nitrogen pressure decay over the course of the crystal growth, we developed an in situ method that correlates gas phase changes with precipitation of GaN from the sodium-gallium melt. Based on this analysis, the growth rate may have actually been as high as 90 µm/h, as it would suggest GaN growth ceased prior to the end of the run. We also observed gas phase behavior identified as likely characteristic of GaN polynucleation.
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A new system for sodium flux growth of bulk GaN. Part II: in situ investigation of growth processes
Von Dollen, Paul; Pimputkar, Siddha; Alreesh, Mohammed Abo; Nakamura, Shuji; Speck, James S.
2016-01-01
We report recent results of bulk GaN crystal growth using the sodium flux method in a new crucible-free growth system. We observed a (0001) Ga face (+c-plane) growth rate >50 µm/h for growth at a N2 overpressure of ~5 MPa and 860 °C, which is the highest crystal growth rate reported for this technique to date. Omega X-ray rocking curve (ω-XRC) measurements indicated the presence of multiple grains, though full width at half maximum (FWHM) values for individual peaks were <100 arcseconds. Oxygen impurity concentrations as measured by secondary ion mass spectroscopy (SIMS) were >1020 atoms/cm3. By monitoring the nitrogen pressure decay over the course of the crystal growth, we developed an in situ method that correlates gas phase changes with precipitation of GaN from the sodium-gallium melt. Based on this analysis, the growth rate may have actually been as high as 90 µm/h, as it would suggest GaN growth ceased prior to the end of the run. We also observed gas phase behavior identified as likely characteristic of GaN polynucleation.
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Growth of single crystals of BaFe12O19 by solid state crystal growth
Fisher, John G.; Sun, Hengyang; Kook, Young-Geun; Kim, Joon-Seong; Le, Phan Gia
2016-10-01
Single crystals of BaFe12O19 are grown for the first time by solid state crystal growth. Seed crystals of BaFe12O19 are buried in BaFe12O19+1 wt% BaCO3 powder, which are then pressed into pellets containing the seed crystals. During sintering, single crystals of BaFe12O19 up to ∼130 μm thick in the c-axis direction grow on the seed crystals by consuming grains from the surrounding polycrystalline matrix. Scanning electron microscopy-energy dispersive spectroscopy analysis shows that the single crystal and the surrounding polycrystalline matrix have the same chemical composition. Micro-Raman scattering shows the single crystal to have the BaFe12O19 structure. The optimum growth temperature is found to be 1200 °C. The single crystal growth behavior is explained using the mixed control theory of grain growth.
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Self-templated synthesis of single-crystal and single-domain ferroelectric nanoplates
Chao, Chunying; Ren, Zhaohui; Zhu, Yihan; Xiao, Zhen; Liu, Zhenya; Xú , Gang; Mai, Jiangquan; Li, Xiang; Shen, Ge; Han, Gaorong
2012-01-01
Free-standing single-crystal PbTiO 3 nanoplates (see picture) were synthesized by a facile hydrothermal method. A "self-templated" crystal growth is presumed to lead to the formation of the PbTiO 3 nanoplates, which have ferroelectric single
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Inkjet printing of single-crystal films.
Minemawari, Hiromi; Yamada, Toshikazu; Matsui, Hiroyuki; Tsutsumi, Jun'ya; Haas, Simon; Chiba, Ryosuke; Kumai, Reiji; Hasegawa, Tatsuo
2011-07-13
The use of single crystals has been fundamental to the development of semiconductor microelectronics and solid-state science. Whether based on inorganic or organic materials, the devices that show the highest performance rely on single-crystal interfaces, with their nearly perfect translational symmetry and exceptionally high chemical purity. Attention has recently been focused on developing simple ways of producing electronic devices by means of printing technologies. 'Printed electronics' is being explored for the manufacture of large-area and flexible electronic devices by the patterned application of functional inks containing soluble or dispersed semiconducting materials. However, because of the strong self-organizing tendency of the deposited materials, the production of semiconducting thin films of high crystallinity (indispensable for realizing high carrier mobility) may be incompatible with conventional printing processes. Here we develop a method that combines the technique of antisolvent crystallization with inkjet printing to produce organic semiconducting thin films of high crystallinity. Specifically, we show that mixing fine droplets of an antisolvent and a solution of an active semiconducting component within a confined area on an amorphous substrate can trigger the controlled formation of exceptionally uniform single-crystal or polycrystalline thin films that grow at the liquid-air interfaces. Using this approach, we have printed single crystals of the organic semiconductor 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C(8)-BTBT) (ref. 15), yielding thin-film transistors with average carrier mobilities as high as 16.4 cm(2) V(-1) s(-1). This printing technique constitutes a major step towards the use of high-performance single-crystal semiconductor devices for large-area and flexible electronics applications.
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Formation of helical dislocations in ammonothermal GaN substrate by heat treatment
International Nuclear Information System (INIS)
Horibuchi, Kayo; Yamaguchi, Satoshi; Kimoto, Yasuji; Nishikawa, Koichi; Kachi, Tetsu
2016-01-01
GaN substrate produced by the basic ammonothermal method and an epitaxial layer on the substrate was evaluated using synchrotron radiation x-ray topography and transmission electron microscopy. We revealed that the threading dislocations present in the GaN substrate are deformed into helical dislocations and the generation of the voids by heat treatment in the substrate for the first observation in the GaN crystal. These phenomena are formed by the interactions between the dislocations and vacancies. The helical dislocation was formed in the substrate region, and not in the epitaxial layer region. Furthermore, the evaluation of the influence of the dislocations on the leakage current of Schottky barrier diodes fabricated on the epitaxial layer is discussed. The dislocations did not affect the leakage current characteristics of the epitaxial layer. Our results suggest that the deformation of dislocations in the GaN substrate does not adversely affect the epitaxial layer. (paper)
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Controlled growth of filamentary crystals and fabrication of single-crystal whisker probes
International Nuclear Information System (INIS)
Givargizov, E. I.
2006-01-01
The growth of filamentary crystals (whiskers) on a single-crystal substrate through the vapour-liquid-solid mechanism is described. The possibility of fabricating oriented systems of whiskers on the basis of this mechanism of crystal growth is noted. A phenomenon that is important for nanotechnology is noted: the existence of a critical diameter of whiskers, below which they are not formed. The phenomenon of radial periodic instability, which is characteristic of nanowhiskers, is described and the ways of its elimination are shown. The possibility of transforming whiskers into single-crystal tips and the growth of crystalline diamond particles at their apices are noted as important for practice. Possible applications of systems of whiskers and tips are described briefly. Particular attention is paid to the latest direction in whisker technology-fabrication of single-crystal whisker probes for atomic force microscopy
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Crystal structure and magnetic susceptibility of UOSe single crystals
International Nuclear Information System (INIS)
Kaczorowski, D.; Muenster Univ.; Poettgen, R.; Jeitschko, W.; Gajek, Z.; Zygmunt, A.
1993-01-01
The crystal structure and magnetic susceptibility behaviour of UOSe single crystals have been studied. UOSe crystalizes in the tetragonal PbFC1-type structure (space group P4/nmm) with the lattice parameters: a = 390.38(5) pm and c = 698.05(9) pm. It orders antiferromagnetically at T N =100±2 K and exhibits a very strong anisotropy in the susceptibility vs temperature variation. The magnetic and thermodynamic properties of UOSe are successfully interpreted in the framework of a perturbative ab initio crystal field approach. (Author)
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Crystal structure and magnetic susceptibility of UOSe single crystals
Energy Technology Data Exchange (ETDEWEB)
Kaczorowski, D. (Polish Academy of Sciences, Wroclaw (Poland). Inst. for Low Temperature and Structure Research Muenster Univ. (Germany). Anorganisch-Chemisches Inst.); Poettgen, R.; Jeitschko, W. (Muenster Univ. (Germany). Anorganisch-Chemisches Inst.); Gajek, Z.; Zygmunt, A. (Polish Academy of Sciences, Wroclaw (Poland). Inst. for Low Temperature and Structure Research)
1993-01-01
The crystal structure and magnetic susceptibility behaviour of UOSe single crystals have been studied. UOSe crystalizes in the tetragonal PbFC1-type structure (space group P4/nmm) with the lattice parameters: a = 390.38(5) pm and c = 698.05(9) pm. It orders antiferromagnetically at T[sub N]=100[+-]2 K and exhibits a very strong anisotropy in the susceptibility vs temperature variation. The magnetic and thermodynamic properties of UOSe are successfully interpreted in the framework of a perturbative ab initio crystal field approach. (Author).
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Energy Technology Data Exchange (ETDEWEB)
Kim, Seong-Woo; Suzuki, Toshimasa [Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro, Saitama, 345-8501 (Japan); Aida, Hideo [NAMIKI Precision Jewel Co. Ltd., 3-8-22 Shinden, Adachi-ku, Tokyo, 123-8511 (Japan)
2004-09-01
The effect of a slight mis-orientation of c-plane sapphire substrate on the surface morphology and crystal quality of GaN thin films grown by MOCVD has been investigated. The mis-orientation angle of vicinal c-plane sapphire substrate was changed within the range of 0.00(zero)-1.00(one) degree, and the experimental results were compared with those on just angle (zero degree) c-plane sapphire substrate. The surface morphology and crystal quality were found to be very sensitive to mis-orientation angle. Consequently, the mis-orientation angle was optimized to be 0.15 . (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
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International Nuclear Information System (INIS)
Lee, S. W.; Minegishi, T.; Lee, W. H.; Goto, H.; Lee, H. J.; Lee, S. H.; Lee, Hyo-Jong; Ha, J. S.; Goto, T.; Hanada, T.; Cho, M. W.; Yao, T.
2007-01-01
Strain-free freestanding GaN layers were prepared by in situ lift-off process using a ZnO buffer as a sacrificing layer. Thin Zn-polar ZnO layers were deposited on c-plane sapphire substrates, which was followed by the growth of Ga-polar GaN layers both by molecular beam epitaxy (MBE). The MBE-grown GaN layer acted as a protecting layer against decomposition of the ZnO layer and as a seeding layer for GaN growth. The ZnO layer was completely in situ etched off during growth of thick GaN layers at low temperature by hydride vapor phase epitaxy. Hence freestanding GaN layers were obtained for the consecutive growth of high-temperature GaN thick layers. The lattice constants of freestanding GaN agree with those of strain-free GaN bulk. Extensive microphotoluminescence study indicates that strain-free states extend throughout the high-temperature grown GaN layers
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Fabrication of p-type porous GaN on silicon and epitaxial GaN
Bilousov, Oleksandr V.; Geaney, Hugh; Carvajal, Joan J.; Zubialevich, Vitaly Z.; Parbrook, Peter J.; Giguere, A.; Drouin, D.; Diaz, Francesc; Aguilo, Magdalena; O'Dwyer, Colm
2013-01-01
Porous GaN layers are grown on silicon from gold or platinum catalyst seed layers, and self-catalyzed on epitaxial GaN films on sapphire. Using a Mg-based precursor, we demonstrate p-type doping of the porous GaN. Electrical measurements for p-type GaN on Si show Ohmic and Schottky behavior from gold and platinum seeded GaN, respectively. Ohmicity is attributed to the formation of a Ga2Au intermetallic. Porous p-type GaN was also achieved on epitaxial n-GaN on sapphire, and transport measurem...
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Distributed Feedback Laser Based on Single Crystal Perovskite
Sun, Shang; Xiao, Shumin; Song, Qinghai
2017-06-01
We demonstrate a single crystal perovskite based, with grating-structured photoresist on top, highly polarized distributed feedback laser. A lower laser threshold than the Fabry-Perot mode lasers from the same single crystal CH3NH3PbBr3 microplate was obtained. Single crystal CH3NH3PbBr3 microplates was synthesized with one-step solution processed precipitation method. Once the photoresist on top of the microplate was patterned with electron beam, the device was realized. This one-step fabrication process utilized the advantage of single crystal to the greatest extend. The ultra-low defect density in single crystalline microplate offer an opportunity for lower threshold lasing action compare with poly-crystal perovskite films. In the experiment, the lasing action based on the distributed feedback grating design was found with lower threshold and higher intensity than the Fabry-Perot mode lasers supported by the flat facets of the same microplate.
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Growth and surface topography of WSe_2 single crystal
International Nuclear Information System (INIS)
Dixit, Vijay; Vyas, Chirag; Pataniya, Pratik; Jani, Mihir; Pathak, Vishal; Patel, Abhishek; Pathak, V. M.; Patel, K. D.; Solanki, G. K.
2016-01-01
Tungsten Di-Selenide belongs to the family of TMDCs showing their potential applications in the fields of Optoelectronics and PEC solar cells. Here in the present investigation single crystals of WSe_2 were grown by Direct Vapour Transport Technique in a dual zone furnace having temperature difference of 50 K between the two zones. These single crystals were characterized by EDAX which confirms the stiochiometry of the grown crystals. Surface topography of the crystal was studied by optical micrograph showing the left handed spirals on the surface of WSe_2 crystals. Single crystalline nature of the crystals was confirmed by SAED.
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Spin injection in epitaxial MnGa(111)/GaN(0001) heterostructures
Zube, Christian; Malindretos, Joerg; Watschke, Lars; Zamani, Reza R.; Disterheft, David; Ulbrich, Rainer G.; Rizzi, Angela; Iza, Michael; Keller, Stacia; DenBaars, Steven P.
2018-01-01
Ferromagnetic MnGa(111) layers were grown on GaN(0001) by molecular beam epitaxy. MnGa/GaN Schottky diodes with a doping level of around n = 7 × 1018 cm-3 were fabricated to achieve single step tunneling across the metal/semiconductor junction. Below the GaN layer, a thin InGaN quantum well served as optical spin detector ("spin-LED"). For electron spin injection from MnGa into GaN and subsequent spin transport through a 45 nm (70 nm) thick GaN layer, we observe a circular polarization of 0.3% (0.2%) in the electroluminescence at 80 K. Interface mixing, spin polarization losses during electrical transport in the GaN layer, and spin relaxation in the InGaN quantum well are discussed in relation with the low value of the optically detected spin polarization.
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Integrated GaN photonic circuits on silicon (100) for second harmonic generation
Xiong, Chi; Pernice, Wolfram; Ryu, Kevin K.; Schuck, Carsten; Fong, King Y.; Palacios, Tomas; Tang, Hong X.
2014-01-01
We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around 1560 nm and 780 nm, we achieve efficient, tunable second harmonic generation at 780 nm. The \\{chi}(2) nonlinear susceptibility is measured to be as high as 16 plus minus 7 pm/V. Because GaN has a wideband transparency window covering ultraviolet, visible and ...
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Single Crystals Grown Under Unconstrained Conditions
Sunagawa, Ichiro
Based on detailed investigations on morphology (evolution and variation in external forms), surface microtopography of crystal faces (spirals and etch figures), internal morphology (growth sectors, growth banding and associated impurity partitioning) and perfection (dislocations and other lattice defects) in single crystals, we can deduce how and by what mechanism the crystal grew and experienced fluctuation in growth parameters through its growth and post-growth history under unconstrained condition. The information is useful not only in finding appropriate way to growing highly perfect and homogeneous single crystals, but also in deciphering letters sent from the depth of the Earth and the Space. It is also useful in discriminating synthetic from natural gemstones. In this chapter, available methods to obtain molecular information are briefly summarized, and actual examples to demonstrate the importance of this type of investigations are selected from both natural minerals (diamond, quartz, hematite, corundum, beryl, phlogopite) and synthetic crystals (SiC, diamond, corundum, beryl).
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Polycrystalline GaN layer recrystallization by metal-induced method during the baking process
Energy Technology Data Exchange (ETDEWEB)
Jagoda, A.; Stanczyk, B.; Dobrzanski, L.; Diduszko, R. [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw 118 (Poland)
2007-04-15
Radio frequency reactive sputtering was used to produce gallium nitride films on thermally oxidized silicon substrates at room temperature. Metallic Ga (purity 6N) was used as the target, N{sub 2} and Ar were utilized as sputtering gases. Amorphous GaN was obtained by metal-induced crystallization with a Ni assistance. The nickel particles were scattered onto the surface by rf sputtering and their density was 2 x 10{sup 14} atoms/cm{sup 2} or 4 x 10{sup 14} atoms/cm{sup 2}, which corresponds to 0.02 nm and 0.04 nm thick layer. These values are less than a monolayer thickness, so they are not continuous. Samples were annealed at 700 C for 3 h and at 900 C for 5 min in a RTP furnace. The 2.5 {mu}m GaN layers grown on the Ni-coated SiO{sub 2} surface recrystallized during annealing forming crystals of (002) orientation. The catalytic regrowth mechanism of GaN is discussed on the basis of experimental results. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
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Discovering a Defect that Imposes a Limit to Mg Doping in p-Type GaN
International Nuclear Information System (INIS)
Liliental-Weber, Z.; Tomaszewicz, T.; Zakharov, D.; O'Keefe, M.A.
2006-01-01
Gallium nitride (GaN) is the III-V semiconductor used to produce blue light-emitting diodes (LEDs) and blue and ultraviolet solid-state lasers. To be useful in electronic devices, GaN must be doped with elements that function either as electron donors or as acceptors to turn it into either an n-type semiconductor or a p-type semiconductor. It has been found that GaN can easily be grown with n-conductivity, even up to large concentrations of donors--in the few 10 19 cm -3 range. However, p-doping, the doping of the structure with atoms that provide electron sinks or holes, is not well understood and remains extremely difficult. The only efficient p-type dopant is Mg, but it is found that the free hole concentration is limited to 2 x 10 18 cm -3 , even when Mg concentrations are pushed into the low 10 19 cm -3 range. This saturation effect could place a limit on further development of GaN based devices. Further increase of the Mg concentration, up to 1 x 10 20 cm -3 leads to a decrease of the free hole concentration and an increase in defects. While low- to medium-brightness GaN light-emitting diodes (LEDs) are remarkably tolerant of crystal defects, blue and UV GaN lasers are much less so. We used electron microscopy to investigate Mg doping in GaN. Our transmission electron microscopy (TEM) studies revealed the formation of different types of Mg-rich defects [1,2]. In particular, high-resolution TEM allowed us to characterize a completely new type of defect in Mg-rich GaN. We found that the type of defect depended strongly on crystal growth polarity. For crystals grown with N-polarity, planar defects are distributed at equal distances (20 unit cells of GaN); these defects can be described as inversion domains [1]. For growth with Ga-polarity, we found a different type of defect [2]. These defects turn out to be three-dimensional Mg-rich hexagonal pyramids (or trapezoids) with their base on the (0001) plane and their six walls formed on {1123} planes (Fig. 1a). In
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Determination of mass density, dielectric, elastic, and piezoelectric constants of bulk GaN crystal.
Soluch, Waldemar; Brzozowski, Ernest; Lysakowska, Magdalena; Sadura, Jolanta
2011-11-01
Mass density, dielectric, elastic, and piezoelectric constants of bulk GaN crystal were determined. Mass density was obtained from the measured ratio of mass to volume of a cuboid. The dielectric constants were determined from the measured capacitances of an interdigital transducer (IDT) deposited on a Z-cut plate and from a parallel plate capacitor fabricated from this plate. The elastic and piezoelectric constants were determined by comparing the measured and calculated SAW velocities and electromechanical coupling coefficients on the Z- and X-cut plates. The following new constants were obtained: mass density p = 5986 kg/m(3); relative dielectric constants (at constant strain S) ε(S)(11)/ε(0) = 8.6 and ε(S)(11)/ε(0) = 10.5, where ε(0) is a dielectric constant of free space; elastic constants (at constant electric field E) C(E)(11) = 349.7, C(E)(12) = 128.1, C(E)(13) = 129.4, C(E)(33) = 430.3, and C(E)(44) = 96.5 GPa; and piezoelectric constants e(33) = 0.84, e(31) = -0.47, and e(15) = -0.41 C/m(2).
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Production and several properties of single crystal austenitic stainless steels
International Nuclear Information System (INIS)
Okamoto, Kazutaka; Yoshinari, Akira; Kaneda, Junya; Aono, Yasuhisa; Kato, Takahiko
1998-01-01
The single crystal austenitic stainless steels Type 316L and 304L were grown in order to improve the resistance to stress corrosion cracking (SCC) using a unidirectional solidification method which can provide the large size single crystals. The mechanical properties and the chemical properties were examined. The orientation and temperature dependence of tensile properties of the single crystals were measured. The yield stress of the single crystal steels are lower than those of the conventional polycrystal steels because of the grain boundary strength cannot be expected in the single crystal steels. The tensile properties of the single crystal austenitic stainless steel Type 316L depend strongly on the orientation. The tensile strength in orientation are about 200 MPa higher than those in the and orientations. The microstructure of the single crystal consists of a mixture of the continuous γ-austenitic single crystal matrix and the δ-ferrite phase so that the effects of the γ/δ boundaries on the chemical properties were studied. The effects of the δ-ferrite phases and the γ/δ boundaries on the resistance to SCC were examined by the creviced bent beam test (CBB test). No crack is observed in all the CBB test specimens of the single crystals, even at the γ/δ boundaries. The behavior of the radiation induced segregation (RIS) at the γ/δ boundaries in the single crystal austenitic stainless steel Type 316L was evaluated by the electron irradiation test in the high voltage electron microscope (HVEM). The depletion of oversized solute chromium at the γ/δ boundary in the single crystal austenitic stainless steel Type 316L is remarkably lower than that at the grain boundary in the polycrystalline-type 316L. (author)
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Wahl, U; Araújo, J P; Rita, E; Soares, JC
2007-01-01
We have determined the lattice location of implanted arsenic in GaN by means of conversion electron emission channeling from radioactive $^{73}$As. We give direct evidence that As is an amphoteric impurity, thus settling the long-standing question as to whether it prefers cation or anion sites in GaN. The amphoteric character of As and the fact that As$\\scriptstyle_{Ga}\\,$ " anti-sites ” are not minority defects provide additional aspects to be taken into account for an explanantion of the so-called “ miscibility gap ” in ternary GaAs$\\scriptstyle_{1-x}$N$\\scriptstyle_{x}$ compounds, which cannot be grown with a single phase for values of $x$ in the range 0.1<${x}$< 0.99.
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Growth of InGaN multiple quantum wells and GaN eplilayer on GaN substrate
International Nuclear Information System (INIS)
Lee, Sung-Nam; Paek, H.S.; Son, J.K.; Sakong, T.; Yoon, E.; Nam, O.H.; Park, Y.
2006-01-01
We investigated that the surface morphology of GaN epilayers was significantly affected by the surface tilt orientation of GaN substrate. Surface morphologies of GaN epilayers on GaN substrates show three types: mirror, wavy, and hillock. These surface morphologies are dependent on the surface orientation of GaN substrates. It is found that the hillock morphology of GaN epilayer was formed on the GaN substrate with surface tilt orientation less than 0.1 o . As the surface tilt angle increased to 0.35 o , the surface morphology varied from hillock to wavy morphology. Above a surface tilt angle of 0.4 o , surface morphology changed to the mirror-like type morphology. Additionally, these three types of GaN surface morphology also affected the optical quality of GaN epilayers as well as InGaN multiple quantum wells on GaN substrates by non-uniform In incorporation on the different surface morphologies of GaN epilayers
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Organic field-effect transistors using single crystals
International Nuclear Information System (INIS)
Hasegawa, Tatsuo; Takeya, Jun
2009-01-01
Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs), the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20-40 cm 2 Vs -1 , achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR) measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps. (topical review)
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Effects of Precursor-Substrate Distances on the Growth of GaN Nanowires
Directory of Open Access Journals (Sweden)
Hongbin Cheng
2015-01-01
Full Text Available GaN nanowires were synthesized through the Ni-catalyzed chemical vapor deposition (CVD method using Ga2O3/GaN mixtures as gallium sources, and precursor-substrate distances were investigated as the important factor for the growth of GaN nanowires. The microstructure, composition, and photoluminescence property were characterized by X-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy, and photoluminescence spectra. The results showed that single crystalline GaN nanowires with the diameter of about 90 nm and the length up to tens of micrometers had been grown thickly across Si (100 substrates with uniform density. Moreover, the variations of the GaN nanowire morphology, density, and size were largely attributed to substrate positions which would influence Ga precursor density in the carrier gas, the saturation degree of gaseous reactants, and the catalyst activity, respectively, in the fabrication of GaN nanowires by the vapour liquid solid mechanism.
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Prospects for the synthesis of large single-crystal diamonds
International Nuclear Information System (INIS)
Khmelnitskiy, R A
2015-01-01
The unique properties of diamond have stimulated the study of and search for its applications in many fields, including optics, optoelectronics, electronics, biology, and electrochemistry. Whereas chemical vapor deposition allows the growth of polycrystalline diamond plates more than 200 mm in diameter, most current diamond application technologies require large-size (25 mm and more) single-crystal diamond substrates or films suitable for the photolithography process. This is quite a challenge, because the largest diamond crystals currently available are 10 mm or less in size. This review examines three promising approaches to fabricating large-size diamond single crystals: growing large-size single crystals, the deposition of heteroepitaxial diamond films on single-crystal substrates, and the preparation of composite diamond substrates. (reviews of topical problems)
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Above room-temperature ferromagnetism of Mn delta-doped GaN nanorods
International Nuclear Information System (INIS)
Lin, Y. T.; Wadekar, P. V.; Kao, H. S.; Chen, T. H.; Chen, Q. Y.; Tu, L. W.; Huang, H. C.; Ho, N. J.
2014-01-01
One-dimensional nitride based diluted magnetic semiconductors were grown by plasma-assisted molecular beam epitaxy. Delta-doping technique was adopted to dope GaN nanorods with Mn. The structural and magnetic properties were investigated. The GaMnN nanorods with a single crystalline structure and with Ga sites substituted by Mn atoms were verified by high-resolution x-ray diffraction and Raman scattering, respectively. Secondary phases were not observed by high-resolution x-ray diffraction and high-resolution transmission electron microscopy. In addition, the magnetic hysteresis curves show that the Mn delta-doped GaN nanorods are ferromagnetic above room temperature. The magnetization with magnetic field perpendicular to GaN c-axis saturates easier than the one with field parallel to GaN c-axis
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Incorporation of Mg in Free-Standing HVPE GaN Substrates
Zvanut, M. E.; Dashdorj, J.; Freitas, J. A.; Glaser, E. R.; Willoughby, W. R.; Leach, J. H.; Udwary, K.
2016-06-01
Mg, the only effective p-type dopant for nitrides, is well studied in thin films due to the important role of the impurity in light-emitting diodes and high-power electronics. However, there are few reports of Mg in thick free-standing GaN substrates. Here, we demonstrate successful incorporation of Mg into GaN grown by hydride vapor-phase epitaxy (HVPE) using metallic Mg as the doping source. The concentration of Mg obtained from four separate growth runs ranged between 1016 cm-3 and 1019 cm-3. Raman spectroscopy and x-ray diffraction revealed that Mg did not induce stress or perturb the crystalline quality of the HVPE GaN substrates. Photoluminescence (PL) and electron paramagnetic resonance (EPR) spectroscopies were performed to investigate the types of point defects in the crystals. The near-band-edge excitonic and shallow donor-shallow acceptor radiative recombination processes involving shallow Mg acceptors were prominent in the PL spectrum of a sample doped to 3 × 1018 cm-3, while the EPR signal was also thought to represent a shallow Mg acceptor. Detection of this signal reflects minimization of nonuniform strain obtained in the thick free-standing HVPE GaN compared with heteroepitaxial thin films.
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Cao, Feidao; Zhao, Huaici; Liu, Pengfei
2017-11-01
Generative adversarial networks (GANs) has achieved success in many fields. However, there are some samples generated by many GAN-based works, whose structure is ambiguous. In this work, we propose Structure Guided GANs that introduce structural similar into GANs to overcome the problem. In order to achieve our goal, we introduce an encoder and a decoder into a generator to design a new generator and take real samples as part of the input of a generator. And we modify the loss function of the generator accordingly. By comparison with WGAN, experimental results show that our proposed method overcomes largely sample structure ambiguous and can generate higher quality samples.
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Saidaminov, Makhsud I.
2015-07-06
Single crystals of methylammonium lead trihalide perovskites (MAPbX3; MA=CH3NH3+, X=Br− or I−) have shown remarkably low trap density and charge transport properties; however, growth of such high-quality semiconductors is a time-consuming process. Here we present a rapid crystal growth process to obtain MAPbX3 single crystals, an order of magnitude faster than previous reports. The process is based on our observation of the substantial decrease of MAPbX3 solubility, in certain solvents, at elevated temperatures. The crystals can be both size- and shape-controlled by manipulating the different crystallization parameters. Despite the rapidity of the method, the grown crystals exhibit transport properties and trap densities comparable to the highest quality MAPbX3 reported to date. The phenomenon of inverse or retrograde solubility and its correlated inverse temperature crystallization strategy present a major step forward for advancing the field on perovskite crystallization.
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Attenuation of thermal neutrons by an imperfect single crystal
Energy Technology Data Exchange (ETDEWEB)
Naguib, K.; Adib, M. [National Research Centre, Cairo (Egypt). Reactor and Neutron Physics Dept.
1996-06-14
A semi-empirical formula is given which allows one to calculate the total thermal cross section of an imperfect single crystal as a function of crystal constants, temperature and neutron energy E, in the energy range between 3 meV and 10 eV. The formula also includes the contribution of the parasitic Bragg scattering to the total cross section that takes into account the crystal mosaic spread value and its orientation with respect to the neutron beam direction. A computer program (ISCANF) was developed to calculate the total attenuation of neutrons using the proposed formula. The ISCANF program was applied to investigate the neutron attenuation through a copper single crystal. The calculated values of the neutron transmission through the imperfect copper single crystal were fitted to the measured ones in the energy range 3-40 meV at different crystal orientations. The result of fitting shows that use of the computer program ISCANF allows one to predict the behaviour of the total cross section of an imperfect copper single crystal for the whole energy range. (author).
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Attenuation of thermal neutrons by an imperfect single crystal
Naguib, K.; Adib, M.
1996-06-01
A semi-empirical formula is given which allows one to calculate the total thermal cross section of an imperfect single crystal as a function of crystal constants, temperature and neutron energy E, in the energy range between 3 meV and 10 eV. The formula also includes the contribution of the parasitic Bragg scattering to the total cross section that takes into account the crystal mosaic spread value and its orientation with respect to the neutron beam direction. A computer program (ISCANF) was developed to calculate the total attenuation of neutrons using the proposed formula. The ISCANF program was applied to investigate the neutron attenuation through a copper single crystal. The calculated values of the neutron transmission through the imperfect copper single crystal were fitted to the measured ones in the energy range 3 - 40 meV at different crystal orientations. The result of fitting shows that use of the computer program ISCANF allows one to predict the behaviour of the total cross section of an imperfect copper single crystal for the whole energy range.
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Ethanol surface chemistry on MBE-grown GaN(0001), GaOx/GaN(0001), and Ga2O3(2¯01).
Kollmannsberger, Sebastian L; Walenta, Constantin A; Winnerl, Andrea; Knoller, Fabian; Pereira, Rui N; Tschurl, Martin; Stutzmann, Martin; Heiz, Ueli
2017-09-28
In this work, ethanol is used as a chemical probe to study the passivation of molecular beam epitaxy-grown GaN(0001) by surface oxidation. With a high degree of oxidation, no reaction from ethanol to acetaldehyde in temperature-programmed desorption experiments is observed. The acetaldehyde formation is attributed to a mechanism based on α-H abstraction from the dissociatively bound alcohol molecule. The reactivity is related to negatively charged surface states, which are removed upon oxidation of the GaN(0001) surface. This is compared with the Ga 2 O 3 (2¯01) single crystal surface, which is found to be inert for the acetaldehyde production. These results offer a toolbox to explore the surface chemistry of nitrides and oxynitrides on an atomic scale and relate their intrinsic activity to systems under ambient atmosphere.
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Evidence for moving of threading dislocations during the VPE growth in GaN thin layers
Energy Technology Data Exchange (ETDEWEB)
Kuwano, Noriyuki [Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Miyake, Hideto; Hiramatsu, Kazumasa [Department of Electrical and Electronic Engineering, Mie University, Tsu, Mie 514-8507 (Japan); Amano, Hiroshi [Graduate School of Engineering, Akasaki Research Center, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603 (Japan); Akasaki, Isamu [Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku, Nagoya 468-8502 (Japan)
2011-05-15
Cross-sectional transmission electron microscope (TEM) observation was performed in detail to analyze the morphology of threading dislocations (TDs) in GaN thin layers with various thicknesses. The GaN layers were overgrown on an Al{sub 0.28}Ga{sub 0.72}N layer by the metal-organic vapor-phase epitaxy (MOVPE) method. In a GaN layer about 50 nm in thickness, TDs running up in the AlGaN layer pass into the GaN layer and most of them reach the top surface without bending. In thicker GaN layers, on the other hand, many of TDs form a hairpin-configuration on or above the interface of GaN and AlGaN to be annihilated. This difference in morphology of TDs indicates that the TDs have moved down inside the GaN layer. Since the formation of hairpins is attributed to a stress-relief, there should be an extra half-plane between the paired TDs. Therefore, the movement of TDs should be of ''climb motion''. Another example of possible TD movement inside a GaN layer is also described. It is emphasized that the possibility of TD-movements inside the thin film crystal during the growth should be taken into account in analysis of thin-layer growth through the behavior of TDs (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
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How far could energy transport within a single crystal
Zhang, Yifan; Che, Yanke; Zhao, Jincai; Steve, Granick
Efficient transport of excitation energy over long distance is a vital process in light-harvesting systems and molecular electronics. The energy transfer distance is largely restricted by the probability decay of the exciton when hopping within a single crystal. Here, we fabricated an organic single crystal within which the energy could transfer more than 100 μm, a distance only limited by its crystal size. Our system could be regarded as a ``Sprint relay game'' performing on different surface of tracks. Photoinduced ``athletes'' (excitons) triggered intermolecular ``domino'' reaction to propagate energy for a long distance. In addition, athletes with the same ability runs much farther on smooth ideal track (single crystal assembled from merely van der Waals interaction) than bumpy mud track (crystal assembled from combination of pi-stacking, hydrogen bond and van der Waals interactions). Our finding presents new physics on enhancing energy transfer length within a single crystal. Current Affiliation: Institute for Basic Science, South Korea.
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Investigation of GaN LED with Be-implanted Mg-doped GaN layer
International Nuclear Information System (INIS)
Huang, H.-W.; Kao, C.C.; Chu, J.T.; Kuo, H.C.; Wang, S.C.; Yu, C.C.; Lin, C.F.
2004-01-01
We report the electrical and optical characteristics of GaN light emitting diode (LED) with beryllium (Be) implanted Mg-doped GaN layer. The p-type layer of Be-implanted GaN LED showed a higher hole carrier concentration of 2.3 x 10 18 cm -3 and low specific contact resistance value of 2.0 x 10 -4 Ωcm 2 than as-grown p-GaN LED samples without Be-implantation. The Be-implanted GaN LEDs with InGaN/GaN MQW show slightly lower light output (about 10%) than the as-grown GaN LEDs, caused by the high RTA temperature annealing process
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Role of crystal orientation on chemical mechanical polishing of single crystal copper
Energy Technology Data Exchange (ETDEWEB)
Zhu, Aibin, E-mail: abzhu@mail.xjtu.edu.cn; He, Dayong; Luo, Wencheng; Liu, Yangyang
2016-11-15
Highlights: • The role of crystal orientation in cooper CMP by quasi-continuum was studied. • The atom displacement diagrams were obtained and analyzed. • The stress distribution diagrams and load-displacement curves were analyzed. • This research is helpful to revealing the material removal mechanism of CMP. - Abstract: The material removal mechanism of single crystal copper in chemical mechanical polishing (CMP) has not been intensively investigated. And the role of crystal orientation in CMP of single crystal cooper is not quite clear yet. Quasi-continuum method was adopted in this paper to simulate the process of nano-particles grinding on single crystal copper in CMP process. Three different crystal orientations, i.e. x[100]y[001], x[001]y[110] and x[–211]y[111], were chosen for analysis. The atom displacement diagrams, stress distribution diagrams and load-displacement curves were obtained. After analyzing the deformation mechanism, residual stress of the work piece material and cutting force, results showed that, the crystal orientation of work piece has great influence on the deformation characteristics and surface quality of work piece during polishing. In the A(001)[100] orientation, the residual stress distribution after polishing is deeper, and the stress is larger than that in the B(110)[001] and C(111)[–211] orientations. And the average tangential cutting force in the A(001)[100] orientation is much larger than those in the other two crystal orientation. This research is helpful to revealing the material removal mechanism of CMP process.
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High-quality GaN nanowires grown on Si and porous silicon by thermal evaporation
Energy Technology Data Exchange (ETDEWEB)
Shekari, L., E-mail: lsg09_phy089@student.usm.my [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia); Ramizy, A.; Omar, K.; Hassan, H. Abu; Hassan, Z. [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia)
2012-12-15
Highlights: Black-Right-Pointing-Pointer A new kind of substrate (porous silicon) was used. Black-Right-Pointing-Pointer Also this research introduces an easy and safe method to grow high quality GaN NWs. Black-Right-Pointing-Pointer This is a new growth process to decrease the cost, complexity of growth of GaN NWs. Black-Right-Pointing-Pointer It is a controllable method to synthesize GaN NWs by thermal evaporation. - Abstract: Nanowires (NWs) of GaN thin films were prepared on as-grown Si (1 1 1) and porous silicon (PS) substrates using thermal evaporation method. The film growth produced high-quality wurtzite GaN NWs. The size, morphology, and nanostructures of the crystals were investigated through scanning electron microscopy, high-resolution X-ray diffraction and photoluminescence spectroscopy. The NWs grown on porous silicon were thinner, longer and denser compared with those on as-grown Si. The energy band gap of the NWs grown on PS was larger than that of NWs on as-grown Si. This is due to the greater quantum confinement effects of the crystalline structure of the NWs grown on PS.
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Organic field-effect transistors using single crystals
Directory of Open Access Journals (Sweden)
Tatsuo Hasegawa and Jun Takeya
2009-01-01
Full Text Available Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs, the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20–40 cm2 Vs−1, achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps.
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Crystal ball single event display
International Nuclear Information System (INIS)
Grosnick, D.; Gibson, A.; Allgower, C.; Alyea, J.; Argonne National Lab., IL
1997-01-01
The Single Event Display (SED) is a routine that is designed to provide information graphically about a triggered event within the Crystal Ball. The SED is written entirely in FORTRAN and uses the CERN-based HICZ graphing package. The primary display shows the amount of energy deposited in each of the NaI crystals on a Mercator-like projection of the crystals. Ten different shades and colors correspond to varying amounts of energy deposited within a crystal. Information about energy clusters is displayed on the crystal map by outlining in red the thirteen (or twelve) crystals contained within a cluster and assigning each cluster a number. Additional information about energy clusters is provided in a series of boxes containing useful data about the energy distribution among the crystals within the cluster. Other information shown on the event display include the event trigger type and data about π o 's and η's formed from pairs of clusters as found by the analyzer. A description of the major features is given, along with some information on how to install the SED into the analyzer
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Tensile properties of electron-beam-welded single crystals of molybdenum
International Nuclear Information System (INIS)
Hiraoka, Yutaka; Okada, Masatoshi; Irie, Hirosada; Fujii, Tadayuki.
1987-01-01
The purpose of this study is to investigate the macro- and microstructures and the tensile properties of electron-beam-welded single crystals of molybdenum. The single-crystal sheets were prepared by means of secondary recrystallization. The welding was carried out by a melt-run technique. The weld metal had the same crystallographic orientation as the base metal, and no grain boundary was observed. However, many large weld pores were formed mostly along the weld bond. The strength and ductility of the welded joints of single crystals were almost the same as those of the base metal (''annealed'' single crystals). It is concluded that the joint efficiency of molybdenum single crystals at room temperature or above was excellent and nearly 100 %. (author)
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Electroerosion impulse effect on W single crystal structure
International Nuclear Information System (INIS)
Aleshina, S.A.; Khvostikova, V.D.; Zolotykh, B.N.; Marchuk, A.I.
1977-01-01
The mechanism has been studied of brittle failure of single crystal tungsten on planes of crystallographic orientations [100], [110]; [111] in the process of electro-erosion machining by pulses of energies ranging from 1200 to 5000 μJ and of duration of 1 μs. It is shown that the electro-erosion machining of single crystal tungsten is characterized by the formation of a defect layer with a grid of microcracks which lie at a depth of approximately 80 μm. The appearance and the distribution of cracks on the surface of single crystals depends on the crystallogrpahic orientation
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Nanomechanical resonant structures in single-crystal diamond
Burek, Michael J.; Ramos, Daniel; Patel, Parth; Frank, Ian W.; Lončar, Marko
2013-01-01
With its host of outstanding material properties, single-crystal diamond is an attractive material for nanomechanical systems. Here, the mechanical resonance characteristics of freestanding, single-crystal diamond nanobeams fabricated by an angled-etching methodology are reported. Resonance frequencies displayed evidence of significant compressive stress in doubly clamped diamond nanobeams, while cantilever resonance modes followed the expected inverse-length-squared trend. Q-factors on the o...
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Crystal growth, spectral and laser properties of Nd:LSAT single crystal
Hu, P. C.; Yin, J. G.; Zhao, C. C.; Gong, J.; He, X. M.; Zhang, L. H.; Liang, X. Y.; Hang, Y.
2011-10-01
Nd:(La, Sr)(Al, Ta)O3 (Nd:LSAT) crystal was grown by the Czochralski method. The absorption and fluorescence spectra of Nd:LSAT crystal at room temperature were investigated. With a fiber-coupled diode laser as pump source, the continuous-wave (CW) laser action of Nd:LSAT crystal was demonstrated. The result of diode-pumped laser operation of Nd:LSAT crystal single crystal is reported for what is to our knowledge the first time. The maximum output power at 1064 nm was obtained to be 165 mW under the incident pump power of 3 W, with the slope efficiency 10.9%.
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Self-catalyst growth of novel GaN nanowire flowers on Si (111) using thermal evaporation technique
Energy Technology Data Exchange (ETDEWEB)
Saron, K.M.A., E-mail: kamalmohammedabdalla@yahoo.com [Nano-Optoelectronics Research and Technology Laboratory (NOR), School of Physics, Universiti Sains Malaysia, Penang 11800 (Malaysia); Hashim, M.R., E-mail: roslan@usm.my [Nano-Optoelectronics Research and Technology Laboratory (NOR), School of Physics, Universiti Sains Malaysia, Penang 11800 (Malaysia)
2013-05-15
We investigated the effect of substrate temperature on nanowire (NW) flower GaN epitaxial layers grown on catalyst-free Si (111) through physical vapor deposition via the thermal evaporation of GaN powder at 1150 °C in the absence of NH{sub 3} gas. The NW flowers were grown at various substrate temperatures from 1000 °C to 1100 °C for 60 min in N{sub 2} ambient. The surface morphology as well as the structural and optical properties of GaN NW flowers were examined by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy, X-ray diffraction, and photoluminescence (PL). The results showed that the increase in substrate temperature resulted in a variation in crystal quality and surface morphology. SEM showed that the substrate temperature has a stronger effect on NW density and growth rate with respect to time. The average length of GaN flowers is estimated to be longer than 300 μm after 1 h at 1100 °C, which corresponds to a fast growth rate of more than 200 μm h{sup −1} at all substrate temperatures. The PL measurements showed strong near-band-edge (NBE) emission with a weak deep level emission. The green-yellow emission (GYE) can be attributed to N vacancies or to the V{sub Ga}–O{sub N}-complexes. The NBE peak exhibited a redshift with increasing substrate temperature, which results from the increase in strain level. The growth mechanism of the polycrystalline GaN NWs was also discussed. - Highlights: ► GaN nanowired flowers were grown on free-catalysts Si (111) using PVD. ► A higher temperature, higher uniformity, larger lengths and diameters of the NW flowers. ► As substrate temperature increases the diameters and growth rate of NWs increases. ► A lower temperature resulted in a high density and good crystal quality of GaN NWs. ► The increase in substrate temperature increased the redshift in UV band emission.
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Self-catalyst growth of novel GaN nanowire flowers on Si (111) using thermal evaporation technique
International Nuclear Information System (INIS)
Saron, K.M.A.; Hashim, M.R.
2013-01-01
We investigated the effect of substrate temperature on nanowire (NW) flower GaN epitaxial layers grown on catalyst-free Si (111) through physical vapor deposition via the thermal evaporation of GaN powder at 1150 °C in the absence of NH 3 gas. The NW flowers were grown at various substrate temperatures from 1000 °C to 1100 °C for 60 min in N 2 ambient. The surface morphology as well as the structural and optical properties of GaN NW flowers were examined by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy, X-ray diffraction, and photoluminescence (PL). The results showed that the increase in substrate temperature resulted in a variation in crystal quality and surface morphology. SEM showed that the substrate temperature has a stronger effect on NW density and growth rate with respect to time. The average length of GaN flowers is estimated to be longer than 300 μm after 1 h at 1100 °C, which corresponds to a fast growth rate of more than 200 μm h −1 at all substrate temperatures. The PL measurements showed strong near-band-edge (NBE) emission with a weak deep level emission. The green-yellow emission (GYE) can be attributed to N vacancies or to the V Ga –O N -complexes. The NBE peak exhibited a redshift with increasing substrate temperature, which results from the increase in strain level. The growth mechanism of the polycrystalline GaN NWs was also discussed. - Highlights: ► GaN nanowired flowers were grown on free-catalysts Si (111) using PVD. ► A higher temperature, higher uniformity, larger lengths and diameters of the NW flowers. ► As substrate temperature increases the diameters and growth rate of NWs increases. ► A lower temperature resulted in a high density and good crystal quality of GaN NWs. ► The increase in substrate temperature increased the redshift in UV band emission
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International Nuclear Information System (INIS)
Sangeetha, K.; Babu, R. Ramesh; Bhagavannarayana, G.; Ramamurthi, K.
2011-01-01
Highlights: → L-Arginine monohydrochloride monohydrate (LAHCl) single crystal was grown successfully by unidirectional solution growth method for the first time. → High crystalline perfection was observed for UDS grown crystal compared to CS grown crystal. → The optical transparency and mechanical stability are high for UDS grown LAHCl single crystal. → Optical birefringence measurement on this material. → The piezoelectric resonance frequencies observation - first time observation on this material. - Abstract: L-Arginine monohydrochloride monohydrate (LAHCl) single crystals were grown successfully by conventional and unidirectional solution growth methods. The crystalline perfection of grown crystals was analyzed by high-resolution X-ray diffraction. The linear optical transmittance, mechanical stability of conventional and unidirectional grown LAHCl single crystals were analyzed and compared along (0 0 1) plane. The refractive index and birefringence of LAHCl single crystals were also measured using He-Ne laser source. From the dielectric studies, piezoelectric resonance frequencies were observed in kHz frequency range for both conventional and unidirectional grown LAHCl single crystals along (0 0 1) plane.
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Mesoporous Zeolite Single Crystals for Catalytic Hydrocarbon Conversion
DEFF Research Database (Denmark)
Schmidt, I.; Christensen, Claus H.; Kustova, Marina
2005-01-01
Recently, mesoporous zeolite single crystals were discovered. They constitute a novel family of materials that features a combined micropore and mesopore architecture within each individual crystal. Here, we briefly summarize recent catalytic results from cracking and isomerization of alkalies......, alkylation of aromatics and present new results on isomerization of aromatics. Specifically, the shape-selective isomerization of meta-xylenc into para-xylene and ortho-xylene is studied. In all these reactions, rnesoporous zeolite single crystals prove to be unique catalysts since they provide easy...... transport to and from active sites and at the same time maintain the shape-selectivity required. Thus, all these results support the idea that the beneficial effect of the mesopores system in the mesoporous zeolite single crystals call be solely attributed to enhanced mass transport....
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Resistivity distribution of silicon single crystals using codoping
Wang, Jong Hoe
2005-07-01
Numerous studies including continuous Czochralski method and double crucible technique have been reported on the control of macroscopic axial resistivity distribution in bulk crystal growth. The simple codoping method for improving the productivity of silicon single-crystal growth by controlling axial specific resistivity distribution was proposed by Wang [Jpn. J. Appl. Phys. 43 (2004) 4079]. Wang [J. Crystal Growth 275 (2005) e73] demonstrated using numerical analysis and by experimental results that the axial specific resistivity distribution can be modified in melt growth of silicon crystals and relatively uniform profile is possible by B-P codoping method. In this work, the basic characteristic of 8 in silicon single crystal grown using codoping method is studied and whether proposed method has advantage for the silicon crystal growth is discussed.
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西城, 祐亮
2016-01-01
A selective area doping technology is required for making high performance GaN devices. Usually,ion implantation is used as a method of the selective area doping, but formation of the p-type conductive layer by ion implantation has been difficult for GaN. Mg-ion implanted layers in n--GaN on a high quality free-standing GaN substrate show p-type conduction after high temperature annealing at 1230°C,but Implanted layer consisted of uniform p-type crystalline area and localized crystal defect...
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Ethanol surface chemistry on MBE-grown GaN(0001), GaOx/GaN(0001), and Ga2O3(2 \\xAF 01 )
Kollmannsberger, Sebastian L.; Walenta, Constantin A.; Winnerl, Andrea; Knoller, Fabian; Pereira, Rui N.; Tschurl, Martin; Stutzmann, Martin; Heiz, Ueli
2017-09-01
In this work, ethanol is used as a chemical probe to study the passivation of molecular beam epitaxy-grown GaN(0001) by surface oxidation. With a high degree of oxidation, no reaction from ethanol to acetaldehyde in temperature-programmed desorption experiments is observed. The acetaldehyde formation is attributed to a mechanism based on α -H abstraction from the dissociatively bound alcohol molecule. The reactivity is related to negatively charged surface states, which are removed upon oxidation of the GaN(0001) surface. This is compared with the Ga2O3(2 ¯ 01 ) single crystal surface, which is found to be inert for the acetaldehyde production. These results offer a toolbox to explore the surface chemistry of nitrides and oxynitrides on an atomic scale and relate their intrinsic activity to systems under ambient atmosphere.
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Solar cell structure incorporating a novel single crystal silicon material
Pankove, Jacques I.; Wu, Chung P.
1983-01-01
A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.
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Volz, T.; Schwaiger, R.; Wang, J.; Weygand, S. M.
2018-05-01
Tungsten is a promising material for plasma facing components in future nuclear fusion reactors. In the present work, we numerically investigate the deformation behavior of unirradiated tungsten (a body-centered cubic (bcc) single crystal) underneath nanoindents. A finite element (FE) model is presented to simulate wedge indentation. Crystal plasticity finite element (CPFE) simulations were performed for face-centered and body-centered single crystals accounting for the slip system family {110} in the bcc crystal system and the {111} slip family in the fcc system. The 90° wedge indenter was aligned parallel to the [1 ¯01 ]-direction and indented the crystal in the [0 1 ¯0 ]-direction up to a maximum indentation depth of 2 µm. In both, the fcc and bcc single crystals, the activity of slip systems was investigated and compared. Good agreement with the results from former investigations on fcc single crystals was observed. Furthermore, the in-plane lattice rotation in the material underneath an indent was determined and compared for the fcc and bcc single crystals.
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International Nuclear Information System (INIS)
Puybaret, Renaud; Jordan, Matthew B.; Voss, Paul L.; Ougazzaden, Abdallah; Patriarche, Gilles; Sundaram, Suresh; El Gmili, Youssef; Salvestrini, Jean-Paul; Heer, Walt A. de; Berger, Claire
2016-01-01
We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nanoselective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defects in heteroepitaxy, and the high mobility graphene film could readily provide the back low-dissipative electrode in GaN-based optoelectronic devices. A 5–8 graphene-layer film is first grown on the C-face of 4H-SiC by confinement-controlled sublimation of silicon carbide. Graphene is then patterned and arrays of 75-nm-wide openings are etched in graphene revealing the SiC substrate. A 30-nm-thick GaN is subsequently grown by metal organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfect selectivity on SiC, in the openings patterned through graphene. The up-or-down orientation of the mesas on SiC, their triangular faceting, and cross-sectional scanning transmission electron microscopy show that they are biphasic. The core is a zinc blende monocrystal surrounded with single-crystal wurtzite. The GaN crystalline nanomesas have no threading dislocations or V-pits. This NSAG process potentially leads to integration of high-quality III-nitrides on the wafer scalable epitaxial graphene/silicon carbide platform.
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Energy Technology Data Exchange (ETDEWEB)
Puybaret, Renaud; Jordan, Matthew B.; Voss, Paul L.; Ougazzaden, Abdallah, E-mail: aougazza@georgiatech-metz.fr [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); CNRS UMI 2958, Georgia Institute of Technology, 2 Rue Marconi, 57070 Metz (France); Patriarche, Gilles [CNRS, Laboratoire de Photonique et de Nanostructures, Route de Nozay, 91460 Marcoussis (France); Sundaram, Suresh; El Gmili, Youssef [CNRS UMI 2958, Georgia Institute of Technology, 2 Rue Marconi, 57070 Metz (France); Salvestrini, Jean-Paul [Université de Lorraine, CentraleSupélec, LMOPS, EA4423, 57070 Metz (France); Heer, Walt A. de [School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Berger, Claire [School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); CNRS, Institut Néel, BP166, 38042 Grenoble Cedex 9 (France)
2016-03-07
We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nanoselective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defects in heteroepitaxy, and the high mobility graphene film could readily provide the back low-dissipative electrode in GaN-based optoelectronic devices. A 5–8 graphene-layer film is first grown on the C-face of 4H-SiC by confinement-controlled sublimation of silicon carbide. Graphene is then patterned and arrays of 75-nm-wide openings are etched in graphene revealing the SiC substrate. A 30-nm-thick GaN is subsequently grown by metal organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfect selectivity on SiC, in the openings patterned through graphene. The up-or-down orientation of the mesas on SiC, their triangular faceting, and cross-sectional scanning transmission electron microscopy show that they are biphasic. The core is a zinc blende monocrystal surrounded with single-crystal wurtzite. The GaN crystalline nanomesas have no threading dislocations or V-pits. This NSAG process potentially leads to integration of high-quality III-nitrides on the wafer scalable epitaxial graphene/silicon carbide platform.
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High-quality single crystals for neutron experiments
Indian Academy of Sciences (India)
studies and our collaborative research projects with other UK and international groups will be discussed. Keywords. Crystal growth; floating zone method; neutron scattering. ... of single crystals of new materials is a highly competitive business.
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Self-templated synthesis of single-crystal and single-domain ferroelectric nanoplates
Chao, Chunying
2012-08-15
Free-standing single-crystal PbTiO 3 nanoplates (see picture) were synthesized by a facile hydrothermal method. A "self-templated" crystal growth is presumed to lead to the formation of the PbTiO 3 nanoplates, which have ferroelectric single-domain structures, whose polarization areas can be manipulated by writing and reading. The nanoplates are also effective catalysts for the oxidation of carbon monoxide. © 2012 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
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International Nuclear Information System (INIS)
Ke, Wen-Cheng; Lee, Shuo-Jen; Chen, Shiow-Long; Kao, Chia-Yu; Houng, Wei-Chung; Wei, Chih-An; Su, Yi-Ru
2012-01-01
Highlights: ► We present structural and photoluminescence characteristics of multi-stack InN/GaN QDs. ► A single crystalline 10-nm thick GaN capping layer is grown on the InN QDs. ► The PL intensity of the three-layer stacked sample is about 3 times that of the single-layer sample. - Abstract: This paper reports the structural and photoluminescence (PL) characteristics of single-layer and multi-stack InN/GaN quantum dots (QDs) with varying spacer thickness. A single crystalline 10-nm thick GaN capping layer is grown on the InN QDs by the flow-rate modulation epitaxy (FME) method. The PL peak is red shifted down to 18 meV and its full width at half maximum (FWHM) was narrowed from 104 meV to 77 meV as increasing GaN capping layer thickness to 20-nm. The red-shift and the linewidth narrowing of the PL spectra for the single-layer InN QDs as a result of the increase in capping thickness are believed to be due to the fact that the GaN capping layer decreases the surface defect density thereby decreasing the surface electron concentration of the InN QDs. However, the PL intensity decreases rapidly with the increase in GaN spacer thickness for the three-layer stacked InN/GaN QDs. Because of kinetic roughening, the 20-nm thick GaN capping layer shows a roughened surface. This roughened GaN capping layer degrades the InN QDs growth in the next layer of multi-stack InN QDs. In addition, the increased compressive strain on the InN QDs with the increase in GaN spacer thickness increases the defect density at the InN/GaN capped interface and will further decrease the PL intensity. After the GaN spacer thickness is modified, the PL intensity of the three-layer stacked sample with a 10-nm thick GaN spacer layer is about 3 times that of the single-layer sample.
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Gallium arsenide single crystal solar cell structure and method of making
Stirn, Richard J. (Inventor)
1983-01-01
A production method and structure for a thin-film GaAs crystal for a solar cell on a single-crystal silicon substrate (10) comprising the steps of growing a single-crystal interlayer (12) of material having a closer match in lattice and thermal expansion with single-crystal GaAs than the single-crystal silicon of the substrate, and epitaxially growing a single-crystal film (14) on the interlayer. The material of the interlayer may be germanium or graded germanium-silicon alloy, with low germanium content at the silicon substrate interface, and high germanium content at the upper surface. The surface of the interface layer (12) is annealed for recrystallization by a pulsed beam of energy (laser or electron) prior to growing the interlayer. The solar cell structure may be grown as a single-crystal n.sup.+ /p shallow homojunction film or as a p/n or n/p junction film. A Ga(Al)AS heteroface film may be grown over the GaAs film.
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International Nuclear Information System (INIS)
Lukishova, S.G.; Knox, R.P.; Freivald, P.; McNamara, A.; Boyd, R.W.; Stroud, Jr. C.R.; Schmid, A.W.; Marshall, K.L.
2006-01-01
This paper describes a new application for liquid crystals: quantum information technology. A deterministically polarized single-photon source that efficiently produces photons exhibiting antibunching is a pivotal hardware element in absolutely secure quantum communication. Planar-aligned nematic liquid crystal hosts deterministically align the single dye molecules which produce deterministically polarized single (antibunched) photons. In addition, 1-D photonic bandgap cholesteric liquid crystals will increase single-photon source efficiency. The experiments and challenges in the observation of deterministically polarized fluorescence from single dye molecules in planar-aligned glassy nematic-liquid-crystal oligomer as well as photon antibunching in glassy cholesteric oligomer are described for the first time
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Crystal plasticity study of single crystal tungsten by indentation tests
International Nuclear Information System (INIS)
Yao, Weizhi
2012-01-01
Owing to its favorable material properties, tungsten (W) has been studied as a plasma-facing material in fusion reactors. Experiments on W heating in plasma sources and electron beam facilities have shown an intense micro-crack formation at the heated surface and sub-surface. The cracks go deep inside the irradiated sample, and often large distorted areas caused by local plastic deformation are present around the cracks. To interpret the crack-induced microscopic damage evolution process in W, one needs firstly to understand its plasticity on a single grain level, which is referred to as crystal plasticity. In this thesis, the crystal plasticity of single crystal tungsten (SCW) has been studied by spherical and Berkovich indentation tests and the finite element method with a crystal plasticity model. Appropriate values of the material parameters included in the crystal plasticity model are determined by fitting measured load-displacement curves and pile-up profiles with simulated counterparts for spherical indentation. The numerical simulations reveal excellent agreement with experiment. While the load-displacement curves and the deduced indentation hardness exhibit little sensitivity to the indented plane at small indentation depths, the orientation of slip directions within the crystals governs the development of deformation hillocks at the surface. It is found that several factors like friction, indentation depth, active slip systems, misoriented crystal orientation, misoriented sample surface and azimuthal orientation of the indenter can affect the indentation behavior of SCW. The Berkovich indentation test was also used to study the crystal plasticity of SCW after deuterium irradiation. The critical load (pop-in load) for triggering plastic deformation under the indenter is found to depend on the crystallographic orientation. The pop-in loads decrease dramatically after deuterium plasma irradiation for all three investigated crystallographic planes.
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Photoluminescence properties of boron doped InSe single crystals
International Nuclear Information System (INIS)
Ertap, H.; Bacıoğlu, A.; Karabulut, M.
2015-01-01
Undoped and boron doped InSe single crystals were grown by Bridgman–Stockbarger technique. The PL properties of undoped, 0.1% and 0.5% boron doped InSe single crystals have been investigated at different temperatures. PL measurements revealed four emission bands labeled as A, B, C and D in all the single crystals studied. These emission bands were associated with the radiative recombination of direct free excitons (n=1), impurity-band transitions, donor–acceptor recombinations and structural defect related band (impurity atoms, defects, defect complexes, impurity-vacancy complex etc.), respectively. The direct free exciton (A) bands of undoped, 0.1% and 0.5% boron doped InSe single crystals were observed at 1.337 eV, 1.335 eV and 1.330 eV in the PL spectra measured at 12 K, respectively. Energy positions and PL intensities of the emission bands varied with boron addition. The FWHM of direct free exciton band increases while the FWHM of the D emission band decreases with boron doping. Band gap energies of undoped and boron doped InSe single crystals were calculated from the PL measurements. It was found that the band gap energies of InSe single crystals decreased with increasing boron content. - Highlights: • PL spectra of InSe crystals have been studied as a function of temperature. • Four emission bands were observed in the PL spectra at low temperatures. • PL intensity and position of free exciton band vary with doping and temperature. • Temperature dependences of the bands observed in the PL spectra were analyzed
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Fabrication and Characterization of Mg-Doped GaN Nanowires
International Nuclear Information System (INIS)
Dong-Dong, Zhang; Cheng-Shan, Xue; Hui-Zhao, Zhuang; Ying-Long, Huang; Zou-Ping, Wang; Ying, Wang; Yong-Fu, Guo
2008-01-01
Mg-doped GaN nanowires have been synthesized by ammoniating Ga 2 O 3 films doped with Mg under flowing ammonia atmosphere at 850° C. The Mg-doped GaN nanowires are characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), high-resolution transmission electron microscopy (HRTEM) and photo-luminescence (PL). The results demonstrate that the nanowires are single crystalline with hexagonal wurzite structure. The diameters of the nanowires are 20–30 nm and the lengths are 50–100 μm. The GaN nanowires show three emission bands with well-defined PL peak at 3.45 eV, 3.26 eV, 2.95 eV, respectively. The large distinct blueshift of the bandgap emission can be attributed to the Burstein–Moss effect. The peak at 3.26 eV represents the transition from the conduction-band edge to the acceptor level AM (acceptor Mg). The growth mechanism of crystalline GaN nanowires is discussed briefly. (cross-disciplinary physics and related areas of science and technology)
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Capillarity creates single-crystal calcite nanowires from amorphous calcium carbonate.
Kim, Yi-Yeoun; Hetherington, Nicola B J; Noel, Elizabeth H; Kröger, Roland; Charnock, John M; Christenson, Hugo K; Meldrum, Fiona C
2011-12-23
Single-crystal calcite nanowires are formed by crystallization of morphologically equivalent amorphous calcium carbonate (ACC) particles within the pores of track etch membranes. The polyaspartic acid stabilized ACC is drawn into the membrane pores by capillary action, and the single-crystal nature of the nanowires is attributed to the limited contact of the intramembrane ACC particle with the bulk solution. The reaction environment then supports transformation to a single-crystal product. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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GaN microring waveguide resonators bonded to silicon substrate by a two-step polymer process.
Hashida, Ryohei; Sasaki, Takashi; Hane, Kazuhiro
2018-03-20
Using a polymer bonding technique, GaN microring waveguide resonators were fabricated on a Si substrate for future hybrid integration of GaN and Si photonic devices. The designed GaN microring consisted of a rib waveguide having a core of 510 nm in thickness, 1000 nm in width, and a clad of 240 nm in thickness. A GaN crystalline layer of 1000 nm in thickness was grown on a Si(111) substrate by metal organic chemical vapor deposition using a buffer layer of 300 nm in thickness for the compensation of lattice constant mismatch between GaN and Si crystals. The GaN/Si wafer was bonded to a Si(100) wafer by a two-step polymer process to prevent it from trapping air bubbles. The bonded GaN layer was thinned from the backside by a fast atom beam etching to remove the buffer layer and to generate the rib waveguides. The transmission characteristics of the GaN microring waveguide resonators were measured. The losses of the straight waveguides were measured to be 4.0±1.7 dB/mm around a wavelength of 1.55 μm. The microring radii ranged from 30 to 60 μm, where the measured free-spectral ranges varied from 2.58 to 5.30 nm. The quality factors of the microring waveguide resonators were from 1710 to 2820.
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Infrared reflectance of GaN films grown on Si(001) substrates
International Nuclear Information System (INIS)
Zhang, Xiong; Hou, Yong-Tian; Feng, Zhe-Chuan; Chen, Jin-Li
2001-01-01
GaN thin films on Si(001) substrates are studied by infrared reflectance (IRR) spectroscopy at room temperature (RT). Variations in the IRR spectral line shape with the microstructure of GaN/Si(011) film are quantitatively explained in terms of a three-component effective medium model. In this model, the nominally undoped GaN film is considered to consist of three elementary components, i.e., single crystalline GaN grains, pores (voids), and inter-granulated materials (amorphous GaN clusters). Such a polycrystalline nature of the GaN/Si(001) films was confirmed by scanning electron microscopy measurements. It was demonstrated that based on the proposed three-component effective medium model, excellent overall simulation of the RT-IRR spectra can be achieved, and the fine structures of the GaN reststrahlen band in the measured RT-IRR spectra can also be interpreted very well. Furthermore, the volume fraction for each component in the GaN/Si(001) film was accurately determined by fitting the experimental RT-IRR spectra with the theoretical simulation. These results indicate that IRR spectroscopy can offer a sensitive and convenient tool to probe the microstructure of GaN films grown on silicon. [copyright] 2001 American Institute of Physics
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LASER PROCESSING ON SINGLE CRYSTALS BY UV PULSE LASER
龍見, 雅美; 佐々木, 徹; 高山, 恭宜
2009-01-01
Laser processing by using UV pulsed laser was carried out on single crystal such as sapphire and diamond in order to understand the fundamental laser processing on single crystal. The absorption edges of diamond and sapphire are longer and shorter than the wave length of UV laser, respectively. The processed regions by laser with near threshold power of processing show quite different state in each crystal.
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Piezo-generator integrating a vertical array of GaN nanowires.
Jamond, N; Chrétien, P; Houzé, F; Lu, L; Largeau, L; Maugain, O; Travers, L; Harmand, J C; Glas, F; Lefeuvre, E; Tchernycheva, M; Gogneau, N
2016-08-12
We demonstrate the first piezo-generator integrating a vertical array of GaN nanowires (NWs). We perform a systematic multi-scale analysis, going from single wire properties to macroscopic device fabrication and characterization, which allows us to establish for GaN NWs the relationship between the material properties and the piezo-generation, and to propose an efficient piezo-generator design. The piezo-conversion of individual MBE-grown p-doped GaN NWs in a dense array is assessed by atomic force microscopy (AFM) equipped with a Resiscope module yielding an average output voltage of 228 ± 120 mV and a maximum value of 350 mV generated per NW. In the case of p-doped GaN NWs, the piezo-generation is achieved when a positive piezo-potential is created inside the nanostructures, i.e. when the NWs are submitted to compressive deformation. The understanding of the piezo-generation mechanism in our GaN NWs, gained from AFM analyses, is applied to design a piezo-generator operated under compressive strain. The device consists of NW arrays of several square millimeters in size embedded into spin-on glass with a Schottky contact for rectification and collection of piezo-generated carriers. The generator delivers a maximum power density of ∼12.7 mW cm(-3). This value sets the new state of the art for piezo-generators based on GaN NWs and more generally on nitride NWs, and offers promising prospects for the use of GaN NWs as high-efficiency ultra-compact energy harvesters.
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Crystal growth and characterization of new semiorganic nonlinear optical single crystals
Energy Technology Data Exchange (ETDEWEB)
Kulshrestha, Shobha, E-mail: shobha011986@gmail.com; Shrivastava, A. K., E-mail: ashwaniaks@rediffmail.com [School of Studies in Physics, Jiwaji University Gwalior (M.P.) – 474 011 (India)
2016-05-06
An organic material of a L-histidine monohydrochloride single crystal was grown in a distilled water solution using the slow evaporation method at 40–45°C. The grown crystal was transparent and colourless, with a size of about 20 × 9 × 5 mm{sup 3}, obtained within a period of 21 days. The solubility of grown crystals have found out at various temperatures. The UV-visible transmittance studies show that the grown crystals have wide optical transparency in the entire visible region It is observed that the crystal has transparency window from 255nm to 700nm and its energy gap (Eg) found to be is 3.1eV. The grown crystal was subjected to powder X-ray diffraction analysis, confirming that the orthorhombic crystalline nature of the crystal. To identify the surface morphology, the as grown crystal was subjected to FE-SEM technique. The chemical composition of the grown crystal was estimated by Energy dispersive X-ray analysis. The optical behaviour of the grown crystal was analyzed by PL study.
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Ammer, Ene
1998-01-01
Sisearhitekt Taevo Gansist. Tudengipõlvest, selle aja projektidest, sõpruskonnast, tandemist Summatavet & Gans, Venemaa tellimustest, kaastöölistest. Üksinda Hommilkumaal vene tarbekunsti näitusega 1974. a. 1988. a. loodud perefirmast "GaDis" (omanikud Taevo, Helle Gans, Riia Oja), mis nõustab ka "Wermot" mööbli osas. "GaDise" sisekujundusprojektidest, millega Taevo ja Helle Gans tegelevad üheskoos
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International Nuclear Information System (INIS)
Kang, Shao-Hui; Fang, Te-Hua
2014-01-01
Highlights: • Strain-induced structural variations of GaN nanocones are estimated using in situ TEM. • Young’s modulus of GaN nanocones with a diameter of 100–350 nm are 190–290 GPa. • The E 2 peak was red-shifted, indicated increased compressive stress. - Abstract: Mechanical property measurements of single nanocones are challenging because the small scale of the nanostructures. In this study, critical-stress- and strain-induced structural variations of GaN nanocones are estimated using in situ transmission electron microscopy (TEM) compression experiments. For single GaN nanocones with a diameter of 100–350 nm, the Young’s modulus, plastic deformation energy (W p ), and elastic deformation energy (W e ) values were 190–290 GPa, 0.02–1.65 × 10 −11 J, and 0.04–3.85 × 10 −11 J, respectively. Raman spectra were used to measure GaN indentation. The E 2 peak was red-shifted, indicated increased compressive stress in the indented area
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International Nuclear Information System (INIS)
Yan, P; Qin, D; An, Y K; Li, G Z; Xing, J; Liu, J J
2008-01-01
Herein we describe a thermal treatment route to synthesize gallium nitride (GaN) nanorods. In this method, GaN nanorods were synthesized by thermal treatment of GaN films at a temperature of 800 deg. C. The morphology and structure of GaN nanorods were characterized by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results show that GaN nanorods have a hexagonal wurtzite structure with diameters ranging from 30 to 50 nm. Additionally, GaN nanoplates are also founded in the products. The growth process of GaN nanostructures was investigated and a thermal decomposition mechanism was proposed. Our method provides a cost-effective route to fabricate GaN nanorods, which will benefit the fabrication of one-dimensional nanomaterials and device applications
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Dielectric and baric characteristics of TlS single crystal
Energy Technology Data Exchange (ETDEWEB)
Mustafaeva, S.N., E-mail: solmust@gmail.com [Institute of Physics, ANAS, G. Javid prosp. 33, Az 1143 Baku (Azerbaijan); Asadov, M.M. [Institute of Chemical Problems, ANAS, G. Javid prosp. 29, Az 1143 Baku (Azerbaijan); Ismailov, A.A. [Institute of Physics, ANAS, G. Javid prosp. 33, Az 1143 Baku (Azerbaijan)
2014-11-15
The investigation of the frequency dependences of the dielectric coefficients and ac-conductivity of the TlS single crystals made it possible to elucidate the nature of dielectric loss and the charge transfer mechanism. Moreover, we evaluated the density and energy spread of localized states near the Fermi level, the average hopping time and the average hopping length. It was shown that the dc-conductivity of the TlS single crystals can be controlled by varying the hydrostatic pressure. This has opened up possibilities for using TlS single crystals as active elements of pressure detectors.
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Neutron transmission of single-crystal sapphire filters
International Nuclear Information System (INIS)
Adib, M.; Kilany, M.; Habib, N.; Fathallah, M.
2005-01-01
An additive formula is given that permits the calculation of the nuclear capture, thermal diffuse and Bragg scattering cross-sections as a function of sapphire temperature and crystal parameters. We have developed a computer program that allows calculations of the thermal neutron transmission for the sapphire rhombohedral structure and its equivalent trigonal structure. The calculated total cross-section values and effective attenuation coefficient for single-crystalline sapphire at different temperatures are compared with measured values. Overall agreement is indicated between the formula fits and experimental data. We discuss the use of sapphire single crystal as a thermal neutron filter in terms of the optimum crystal thickness, mosaic spread, temperature, cutting plane and tuning for efficient transmission of thermal-reactor neutrons. (author)
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Friction stir welding of single crystal aluminium
DEFF Research Database (Denmark)
Fonda, Richard Warren; Wert, John A.; Reynolds, A.P.
2007-01-01
Friction stir welds were prepared in different orientations in an aluminium single crystal. The welds were quenched to preserve the microstructure surrounding the tool and then electron backscattered diffraction was used to reveal the generation of grain boundaries and the evolution...... of crystallographic texture around the tool in each weld. The extent of both dynamic recrystallisation and conventional recrystallisation varied considerably as a function of weld orientation. As the base plate begins to interact with the deformation field surrounding the tool, regions of the single crystal rotate...
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Czochralski method of growing single crystals. State-of-art
International Nuclear Information System (INIS)
Bukowski, A.; Zabierowski, P.
1999-01-01
Modern Czochralski method of single crystal growing has been described. The example of Czochralski process is given. The advantages that caused the rapid progress of the method have been presented. The method limitations that motivated the further research and new solutions are also presented. As the example two different ways of the technique development has been described: silicon single crystals growth in the magnetic field; continuous liquid feed of silicon crystals growth. (author)
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National Research Council Canada - National Science Library
Ehrentraut, Dirk
2009-01-01
The ammonothermal growth technique to fabricate large size (>2 inch) gallium nitride (GaN) crystals has recently seen increased interest due to the achievements in the technique published over the last 2-3 years...
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Impact of GaN transition layers in the growth of GaN epitaxial layer on silicon
International Nuclear Information System (INIS)
Zhao Danmei; Zhao Degang; Jiang Desheng; Liu Zongshun; Zhu Jianjun; Chen Ping; Liu Wei; Li Xiang; Shi Ming
2015-01-01
A method for growing GaN epitaxial layer on Si (111) substrate is investigated. Due to the large lattice mismatch between GaN and AlN, GaN grown directly above an AlN buffer layer on the Si substrate turns out to be of poor quality. In this study, a GaN transition layer is grown additionally on the AlN buffer before the GaN epitaxial growth. By changing the growth conditions of the GaN transition layer, we can control the growth and merging of islands and control the transfer time from 3D to 2D growth mode. With this method, the crystalline quality of the GaN epitaxial layer can be improved and the crack density is reduced. Here, we have investigated the impact of a transition layer on the crystalline quality and stress evolution of a GaN epitaxial layer with methods of X-ray diffraction, optical microscopy and in situ reflectivity trace. With the increasing thickness of transition layer, the crack decreases and the crystalline quality is improved. But when the transition layer exceeds a critical thickness, the crystalline quality of the epilayer becomes lower and the crack density increases. (paper)
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International Nuclear Information System (INIS)
Lozano, J G; Hirsch, P B; Nellist, P D; Guerrero-Lebrero, M P; Galindo, P L; Yasuhara, A; Okinishi, E; Zhang, S; Humphreys, C J
2014-01-01
We demonstrate that it is possible to observe depth-dependent atomic displacements in a GaN crystal due to the sufficiently small depth of field achievable in the aberration-corrected scanning transmission electron microscope. The depth-dependent displacements associated with the Eshelby twist of screw dislocations in GaN viewed end on are directly imaged, and makes possible the determination of the sign of the Burgers vector of the dislocation. The experimental results are in good agreement with theoretical images
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Single crystal and optical ceramic multicomponent garnet scintillators: A comparative study
International Nuclear Information System (INIS)
Wu, Yuntao; Luo, Zhaohua; Jiang, Haochuan; Meng, Fang; Koschan, Merry; Melcher, Charles L.
2015-01-01
Multicomponent garnet materials can be made in optical ceramic as well as single crystal form due to their cubic crystal structure. In this work, high-quality Gd 3 Ga 3 Al 2 O 12 :0.2 at% Ce (GGAG:Ce) single crystal and (Gd,Lu) 3 Ga 3 Al 2 O 12 :1 at% Ce (GLuGAG:Ce) optical ceramics were fabricated by the Czochralski method and a combination of hot isostatic pressing (HIPing) and annealing treatment, respectively. Under optical and X-ray excitation, the GLuGAG:Ce optical ceramic exhibits a broad Ce 3+ transition emission centered at 550 nm, while the emission peak of the GGAG:Ce single crystal is centered at 540 nm. A self-absorption effect in GLuGAG:Ce optical ceramic results in this red-shift of the Ce 3+ emission peak compared to that in the GGAG:Ce single crystal. The light yield under 662 keV γ-ray excitation was 45,000±2500 photons/MeV and 48,200±2410 photons/MeV for the GGAG:Ce single crystal and GLuGAG:Ce optical ceramic, respectively. An energy resolution of 7.1% for 662 keV γ-rays was achieved in the GLuGAG:Ce optical ceramic with a Hamamatsu R6231 PMT, which is superior to the value of 7.6% for a GGAG:Ce single crystal. Scintillation decay time measurements under 137 Cs irradiation show two exponential decay components of 58 ns (47%) and 504 ns (53%) for the GGAG:Ce single crystal, and 84 ns (76%) and 148 ns (24%) for the GLuGAG:Ce optical ceramic. The afterglow level after X-ray cutoff in the GLuGAG:Ce optical ceramic is at least one order of magnitude lower than in the GGAG:Ce single crystal. - Highlights: • GGAG:Ce single crystal and GLuGAG:Ce optical ceramics were fabricated. • The light yield of both ceramic and crystal G(Lu)GAG:Ce reached the level of 45,000 photons/MeV. • GLuGAG:Ce optical ceramic showed a better energy resolution of 7.1% for 662 keV. • GLuGAG:Ce ceramics exhibited lower afterglow level than that of GGAG:Ce single crystals. • The possible optimization strategies for multicomponent aluminate garnets are discussed
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Atomic force microscopy studies of homoepitaxial GaN layers grown on GaN template by laser MBE
Energy Technology Data Exchange (ETDEWEB)
Choudhary, B. S. [CSIR-National Physical Laboratory, Dr K.S. Krishnan Road, New Delhi 110012 (India); Rajasthan Technical University, Rawatbhata Road, Kota 324010 (India); Singh, A.; Tyagi, P. K. [Department of Applied Physics, Delhi Technological University, Delhi 110042 (India); Tanwar, S. [Rajasthan Technical University, Rawatbhata Road, Kota 324010 (India); Kumar, M. Senthil; Kushvaha, S. S., E-mail: kushvahas@nplindia.org [CSIR-National Physical Laboratory, Dr K.S. Krishnan Road, New Delhi 110012 (India)
2016-04-13
We have grown homoepitaxial GaN films on metal organic chemical vapor deposition (MOCVD) grown 3.5 µm thick GaN on sapphire (0001) substrate (GaN template) using an ultra-high vacuum (UHV) laser assisted molecular beam epitaxy (LMBE) system. The GaN films were grown by laser ablating a polycrystalline solid GaN target in the presence of active r.f. nitrogen plasma. The influence of laser repetition rates (10-30 Hz) on the surface morphology of homoepitaxial GaN layers have been studied using atomic force microscopy. It was found that GaN layer grown at 10 Hz shows a smooth surface with uniform grain size compared to the rough surface with irregular shape grains obtained at 30 Hz. The variation of surface roughness of the homoepitaxial GaN layer with and without wet chemical etching has been also studied and it was observed that the roughness of the film decreased after wet etching due to the curved structure/rough surface.
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Spherical Nb single crystals containerlessly grown by electrostatic levitation
International Nuclear Information System (INIS)
Sung, Y.S.; Takeya, H.; Hirata, K.; Togano, K.
2003-01-01
Spherical Nb (T m =2750 K) single crystals were grown via containerless electrostatic levitation (ESL). Samples became spherical at melting in levitation and undercooled typically 300-450 K prior to nucleation. As-processed samples were still spherical without any macroscopic shape change by solidification showing a uniform dendritic surface morphology. Crystallographic {111} planes exposed in equilateral triangular shapes on the surface by preferential macroetching and spotty back-reflection Laue patterns confirm the single crystal nature of the ESL-processed Nb samples. No hysteresis in magnetization between zero field and field cooling also implies a clean defect-free condition of the spherical Nb single crystals
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Dislocation confinement in the growth of Na flux GaN on metalorganic chemical vapor deposition-GaN
International Nuclear Information System (INIS)
Takeuchi, S.; Asazu, H.; Nakamura, Y.; Sakai, A.; Imanishi, M.; Imade, M.; Mori, Y.
2015-01-01
We have demonstrated a GaN growth technique in the Na flux method to confine c-, (a+c)-, and a-type dislocations around the interface between a Na flux GaN crystal and a GaN layer grown by metalorganic chemical vapor deposition (MOCVD) on a (0001) sapphire substrate. Transmission electron microscopy (TEM) clearly revealed detailed interface structures and dislocation behaviors that reduced the density of vertically aligned dislocations threading to the Na flux GaN surface. Submicron-scale voids were formed at the interface above the dislocations with a c component in MOCVD-GaN, while no such voids were formed above the a-type dislocations. The penetration of the dislocations with a c component into Na flux GaN was, in most cases, effectively blocked by the presence of the voids. Although some dislocations with a c component in the MOCVD-GaN penetrated into the Na flux GaN, their propagation direction changed laterally through the voids. On the other hand, the a-type dislocations propagated laterally and collectively near the interface, when these dislocations in the MOCVD-GaN penetrated into the Na flux GaN. These results indicated that the dislocation propagation behavior was highly sensitive to the type of dislocation, but all types of dislocations were confined to within several micrometers region of the Na flux GaN from the interface. The cause of void formation, the role of voids in controlling the dislocation behavior, and the mechanism of lateral and collective dislocation propagation are discussed on the basis of TEM results
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Metal Halide Perovskite Single Crystals: From Growth Process to Application
Directory of Open Access Journals (Sweden)
Shuigen Li
2018-05-01
Full Text Available As a strong competitor in the field of optoelectronic applications, organic-inorganic metal hybrid perovskites have been paid much attention because of their superior characteristics, which include broad absorption from visible to near-infrared region, tunable optical and electronic properties, high charge mobility, long exciton diffusion length and carrier recombination lifetime, etc. It is noted that perovskite single crystals show remarkably low trap-state densities and long carrier diffusion lengths, which are even comparable with the best photovoltaic-quality silicon, and thus are expected to provide better optoelectronic performance. This paper reviews the recent development of crystal growth in single-, mixed-organic-cation and fully inorganic halide perovskite single crystals, in particular the solution approach. Furthermore, the application of metal hybrid perovskite single crystals and future perspectives are also highlighted.
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Anisotropy of Single-Crystal Silicon in Nanometric Cutting.
Wang, Zhiguo; Chen, Jiaxuan; Wang, Guilian; Bai, Qingshun; Liang, Yingchun
2017-12-01
The anisotropy exhibited by single-crystal silicon in nanometric cutting is very significant. In order to profoundly understand the effect of crystal anisotropy on cutting behaviors, a large-scale molecular dynamics model was conducted to simulate the nanometric cutting of single-crystal silicon in the (100)[0-10], (100)[0-1-1], (110)[-110], (110)[00-1], (111)[-101], and (111)[-12-1] crystal directions in this study. The simulation results show the variations of different degrees in chip, subsurface damage, cutting force, and friction coefficient with changes in crystal plane and crystal direction. Shear deformation is the formation mechanism of subsurface damage, and the direction and complexity it forms are the primary causes that result in the anisotropy of subsurface damage. Structurally, chips could be classified into completely amorphous ones and incompletely amorphous ones containing a few crystallites. The formation mechanism of the former is high-pressure phase transformation, while the latter is obtained under the combined action of high-pressure phase transformation and cleavage. Based on an analysis of the material removal mode, it can be found that compared with the other crystal direction on the same crystal plane, the (100)[0-10], (110)[-110], and (111)[-101] directions are more suitable for ductile cutting.
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Neutron transmission measurements of zinc and lead single crystals
International Nuclear Information System (INIS)
Adib, M.; Abdel-Kawy, A.
1988-01-01
Neutron transmission measurements of zinc and lead single crystals have been carried out in a neutron wavelength band from 0.03 to 0.55 nm at different orientations of the crystal with regard to the beam direction. The measurements were performed using both time-of-flight and fixed-angle scattering spectrometers installed in front of the ET-RR-1 reactor horizontal channels. It was found that the position of the observed dips in the neutron transmission measurements corresponded to the reflections from the (h k l) planes of the hexagonal zinc single crystal which was cut along the (0 0 2) plane, while in the case of lead, the single crystal was cut perpendicular to the (3 1 1) plane. The reflectivity from the (0 0 2) plane of zinc was determined using both transmission and reflection methods. The maximum reflectivity was found to be 55% when the zinc crystal was orientated at 45 0 to the beam direction. The wavelength spread of the observed reflectivity curve was found to be in agreement with the calculated one, taking into consideration the spectrometer's resolution and the crystal mosaic spread. (author)
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Directory of Open Access Journals (Sweden)
Robert Kucharski
2017-06-01
Full Text Available GaN substrates grown by the ammonothermal method are analyzed by Fast Fourier Transformation Spectroscopy in order to study the impact of doping (both n- and p-type on their transparency in the near-infrared, mid-infrared, and terahertz spectral range. It is shown that the introduction of dopants causes a decrease in transparency of GaN substrates in a broad spectral range which is attributed to absorption on free carriers (n-type samples or dopant ionization (p-type samples. In the mid-infrared the transparency cut-off, which for a semi-insulating GaN is at ~7 µm due to an absorption on a second harmonic of optical phonons, shifts towards shorter wavelengths due to an absorption on free carriers up to ~1 µm at n ~ 1020 cm−3 doping level. Moreover, a semi-insulating GaN crystal shows good transparency in the 1–10 THz range, while for n-and p-type crystal, the transparency in this spectral region is significantly quenched below 1%. In addition, it is shown that in the visible spectral region n-type GaN substrates with a carrier concentration below 1018 cm−3 are highly transparent with the absorption coefficient below 3 cm−1 at 450 nm, a satisfactory condition for light emitting diodes and laser diodes operating in this spectral range.
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Single-Crystal Diamond Nanobeam Waveguide Optomechanics
Khanaliloo, Behzad; Jayakumar, Harishankar; Hryciw, Aaron C.; Lake, David P.; Kaviani, Hamidreza; Barclay, Paul E.
2015-10-01
Single-crystal diamond optomechanical devices have the potential to enable fundamental studies and technologies coupling mechanical vibrations to both light and electronic quantum systems. Here, we demonstrate a single-crystal diamond optomechanical system and show that it allows excitation of diamond mechanical resonances into self-oscillations with amplitude >200 nm . The resulting internal stress field is predicted to allow driving of electron spin transitions of diamond nitrogen-vacancy centers. The mechanical resonances have a quality factor >7 ×105 and can be tuned via nonlinear frequency renormalization, while the optomechanical interface has a 150 nm bandwidth and 9.5 fm /√{Hz } sensitivity. In combination, these features make this system a promising platform for interfacing light, nanomechanics, and electron spins.
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International Nuclear Information System (INIS)
Zhang Min; Shi Jun-Jie
2014-01-01
The electronic structure and magnetic properties of the transition-metal (TM) atoms (Sc—Zn, Pt and Au) doped zigzag GaN single-walled nanotubes (NTs) are investigated using first-principles spin-polarized density functional calculations. Our results show that the bindings of all TM atoms are stable with the binding energy in the range of 6–16 eV. The Sc- and V-doped GaN NTs exhibit a nonmagnetic behavior. The GaN NTs doped with Ti, Mn, Ni, Cu and Pt are antiferromagnetic. On the contrary, the Cr-, Fe-, Co-, Zn- and Au-doped GaN NTs show the ferromagnetic characteristics. The Mn- and Co-doped GaN NTs induce the largest local moment of 4μ B among these TM atoms. The local magnetic moment is dominated by the contribution from the substitutional TM atom and the N atoms bonded with it. (condensed matter: electronic structure, electrical, magnetic, and optical properties)
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Seeded growth of boron arsenide single crystals with high thermal conductivity
Tian, Fei; Song, Bai; Lv, Bing; Sun, Jingying; Huyan, Shuyuan; Wu, Qi; Mao, Jun; Ni, Yizhou; Ding, Zhiwei; Huberman, Samuel; Liu, Te-Huan; Chen, Gang; Chen, Shuo; Chu, Ching-Wu; Ren, Zhifeng
2018-01-01
Materials with high thermal conductivities are crucial to effectively cooling high-power-density electronic and optoelectronic devices. Recently, zinc-blende boron arsenide (BAs) has been predicted to have a very high thermal conductivity of over 2000 W m-1 K-1 at room temperature by first-principles calculations, rendering it a close competitor for diamond which holds the highest thermal conductivity among bulk materials. Experimental demonstration, however, has proved extremely challenging, especially in the preparation of large high quality single crystals. Although BAs crystals have been previously grown by chemical vapor transport (CVT), the growth process relies on spontaneous nucleation and results in small crystals with multiple grains and various defects. Here, we report a controllable CVT synthesis of large single BAs crystals (400-600 μm) by using carefully selected tiny BAs single crystals as seeds. We have obtained BAs single crystals with a thermal conductivity of 351 ± 21 W m-1 K-1 at room temperature, which is almost twice as conductive as previously reported BAs crystals. Further improvement along this direction is very likely.
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The growth of axially modulated p–n GaN nanowires by plasma-enhanced chemical vapor deposition
International Nuclear Information System (INIS)
Wu, Tung-Hsien; Hong, Franklin Chau-Nan
2013-01-01
Due to the n-type characteristics of intrinsic gallium nitride, p-type gallium nitride (GaN) is more difficult to synthesize than n-type gallium nitride in forming the p–n junctions for optoelectronic applications. For the growth of the p-type gallium nitride, magnesium is used as the dopant. The Mg-doped GaN nanowires (NWs) have been synthesized on (111)-oriented n + -silicon substrates by plasma-enhanced chemical vapor deposition. The scanning electron microscope images showed that the GaN NWs were bent at high Mg doping levels, and the transmission electron microscope characterization indicated that single-crystalline GaN NWs grew along < 0001 > orientation. As shown by energy dispersive spectroscopy, the Mg doping levels in GaN NWs increased with increasing partial pressure of magnesium nitride, which was employed as the dopant precursor for p-GaN NW growth. Photoluminescence measurements suggested the presence of both p- and n‐type GaN NWs. Furthermore, the GaN NWs with axial p–n junctions were aligned between either two-Ni or two-Al electrodes by applying alternating current voltages. The current–voltage characteristics have confirmed the formation of axial p–n junctions in GaN nanowires. - Highlights: ► Grow axially modulated GaN nanowires by plasma-enhanced chemical vapor deposition ► Control the Mg concentration of GaN nanowires by tuning Mg 3 N 2 temperature ► Align the GaN nanowires by applying alternating current voltages between electrodes
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Effect of indium and antimony doping in SnS single crystals
Energy Technology Data Exchange (ETDEWEB)
Chaki, Sunil H., E-mail: sunilchaki@yahoo.co.in; Chaudhary, Mahesh D.; Deshpande, M.P.
2015-03-15
Highlights: • Single crystals growth of pure SnS, indium doped SnS and antimony doped SnS by direct vapour transport (DVT) technique. • Doping of In and Sb occurred in SnS single crystals by cation replacement. • The replacement mechanism ascertained by EDAX, XRD and substantiated by Raman spectra analysis. • Dopants concentration affects the optical energy bandgap. • Doping influences electrical transport properties. - Abstract: Single crystals of pure SnS, indium (In) doped SnS and antimony (Sb) doped SnS were grown by direct vapour transport (DVT) technique. Two doping concentrations of 5% and 15% each were employed for both In and Sb dopants. Thus in total five samples were studied viz., pure SnS (S1), 5% In doped SnS (S2), 15% In doped SnS (S3), 5% Sb doped SnS (S4) and 15% Sb doped SnS (S5). The grown single crystal samples were characterized by evaluating their surface microstructure, stoichiometric composition, crystal structure, Raman spectroscopy, optical and electrical transport properties using appropriate techniques. The d.c. electrical resistivity and thermoelectric power variations with temperature showed semiconducting and p-type nature of the as-grown single crystal samples. The room temperature Hall Effect measurements further substantiated the semiconducting and p-type nature of the as-grown single crystal samples. The obtained results are deliberated in detail.
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Cracking of GaN on sapphire from etch-process-induced nonuniformity in residual thermal stress
International Nuclear Information System (INIS)
Lacroix, Yves; Chung, Sung-Hoon; Sakai, Shiro
2001-01-01
An experiment was performed to explain the appearance of cracks along mesa structures during the processing of GaN device layers grown on sapphire substrates. Micro-Raman spectroscopy was used to measure the position-dependent stress in the GaN layer. We show evidence that the stress at the interface with the substrate may be larger along the mesa structures than that of the as-grown layer, and that this increase in stress can be enough to induce cracks along mesa structures during processing. We report on the formation of cracks that propagate guided by the nonuniformity of the stress induced by the formation of mesa structures in the GaN layer, independent of crystal direction. The understanding of cracking mechanisms has implications in GaN-based device structures that require heteroepitaxial growth of layers with different lattice size and thermal expansion coefficients. [copyright] 2001 American Institute of Physics
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CH3NH3PbCl3 Single Crystals: Inverse Temperature Crystallization and Visible-Blind UV-Photodetector
Maculan, Giacomo
2015-09-02
Single crystals of hybrid perovskites have shown remarkably improved physical properties compared to their polycrystalline film counterparts, underscoring their importance in the further development of advanced semiconductor devices. Here we present a new method of sizeable CH3NH3PbCl3 single crystal growth based on retrograde solubility behavior of hybrid perovskites. We show, for the first time, the energy band structure, charge-carrier recombination and transport properties of single crystal CH3NH3PbCl3. The chloride-based perovskite crystals exhibit trap-state density, charge carriers concentration, mobility and diffusion length comparable with the best quality crystals of methylammonium lead iodide or bromide perovskites reported so far. The high quality of the crystal along with its suitable optical bandgap enabled us to design and build an efficient visible-blind UV-photodetector, demonstrating the potential of this material to be employed in optoelectronic applications.
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Growth and characterization of nonlinear optical single crystal: Nicotinic L-tartaric
Energy Technology Data Exchange (ETDEWEB)
Sheelarani, V.; Shanthi, J., E-mail: shanthinelson@gmail.com [Department of Physics, Avinashilingam Institute for Home Science and Higher Education for Women, Coimbatore-641043 (India)
2015-06-24
Nonlinear optical single crystals were grown from Nicotinic and L-Tartaric acid by slow evaporation technique at room temperature. Structure of the grown crystal was confirmed by single crystal X-ray diffraction studies, The crystallinity of the Nicotinic L-Tartaric (NLT) crystals was confirmed from the powder XRD pattern. The transparent range and cut off wavelength of the grown crystal was studied by the UV–Vis spectroscopic analysis.The thermal stability of the crystal was studied by TG-DTA. The second harmonic generation (SHG) efficiency of NLT was confirmed by Kurtz Perry technique.
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Heterogeneous Monolithic Integration of Single-Crystal Organic Materials.
Park, Kyung Sun; Baek, Jangmi; Park, Yoonkyung; Lee, Lynn; Hyon, Jinho; Koo Lee, Yong-Eun; Shrestha, Nabeen K; Kang, Youngjong; Sung, Myung Mo
2017-02-01
Manufacturing high-performance organic electronic circuits requires the effective heterogeneous integration of different nanoscale organic materials with uniform morphology and high crystallinity in a desired arrangement. In particular, the development of high-performance organic electronic and optoelectronic devices relies on high-quality single crystals that show optimal intrinsic charge-transport properties and electrical performance. Moreover, the heterogeneous integration of organic materials on a single substrate in a monolithic way is highly demanded for the production of fundamental organic electronic components as well as complex integrated circuits. Many of the various methods that have been designed to pattern multiple heterogeneous organic materials on a substrate and the heterogeneous integration of organic single crystals with their crystal growth are described here. Critical issues that have been encountered in the development of high-performance organic integrated electronics are also addressed. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Hydrothermal growth of PbSO4 (Anglesite) single crystal
International Nuclear Information System (INIS)
Kikuta, Ko-ichi; Yoneta, Yasuhito; Yogo, Toshinobu; Hirano, Shin-ichi
1994-01-01
Hydrothermal growth of single crystals of PbSO 4 , which is known as a natural mineral called anglesite, was investigated. Lead nitrate and nitric acid solutions were found to be useful for the growth of angle-site on the basis of the experimental results on the dissolution behavior. Relatively large euhedral single crystals bound by {210} and {101} planes were successfully grown in 1.5 mol/kg Pb(NO 3 ) 2 at 400degC and 100 MPa. Optical characterization revealed that the grown anglesite crystals can be useful for scintillators material. (author)
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International Nuclear Information System (INIS)
Prakash, J. Thomas Joseph; Kumararaman, S.
2008-01-01
Gamma glycine has been successfully synthesized by taking glycine and potassium chloride and single crystals have been grown by solvent evaporation method for the first time. The grown single crystals have been analyzed with XRD, Fourier transform infrared (FTIR), and thermo gravimetric and differential thermal analyses (TG/DTA) measurements. Its mechanical behavior has been assessed by Vickers microhardness measurements. Its nonlinear optical property has been tested by Kurtz powder technique. Its optical behavior was examined by UV-vis., and found that the crystal is transparent in the region between 240 and 1200 nm. Hence, it may be very much useful for the second harmonic generation (SHG) applications
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Indian Academy of Sciences (India)
Z L GAN. Articles written in Sadhana. Volume 43 Issue 4 April 2018 pp 59. Effect of scale size, orientation type and dispensing method on void formation in the CUF encapsulation of BGA · AIZAT ABAS FEI CHONG NG Z L GAN M H H ISHAK M Z ABDULLAH GEAN YUEN CHONG · More Details Abstract Fulltext PDF.
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Growth of single crystals from solutions using semi-permeable membranes
Varkey, A. J.; Okeke, C. E.
1983-05-01
A technique suitable for growth of single crystals from solutions using semi-preamble membranes is described. Using this technique single crystals of copper sulphate, potassium bromide and ammonium dihydrogen phosphate have been successfully grown. Advantages of this technique over other methods are discussed.
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Azeotropic binary solvent mixtures for preparation of organic single crystals
Li, X.; Kjellander, B.K.C.; Anthony, J.E.; Bastiaansen, C.W.M.; Broer, D.J.; Gelinck, G.H.
2009-01-01
Here, a new approach is introduced to prepare large single crystals of π-conjugated organic molecules from solution. Utilizing the concept of azeotropism, single crystals of tri-isopropylsilylethynyl pentacene (TIPS-PEN) with dimensions up to millimeters are facilely self-assembled from homogeneous
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Azeotropic binary solvent mixtures for preparation of organic single crystals
Li, X.; Kjellander, B.K.C.; Anthony, J.E.; Bastiaansen, C.W.M.; Broer, D.J.; Gelinck, G.H.
2009-01-01
Here, a new approach is introduced to prepare large single crystals of p-conjugated organic molecules from solution. Utilizing the concept of azeotropism, single crystals of tri-isopropylsilylethynyl pentacene (TIPS-PEN) with dimensions up to millimeters are facilely self-assembled from homogeneous
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Light emission from organic single crystals operated by electrolyte doping
Matsuki, Keiichiro; Sakanoue, Tomo; Yomogida, Yohei; Hotta, Shu; Takenobu, Taishi
2018-03-01
Light-emitting devices based on electrolytes, such as light-emitting electrochemical cells (LECs) and electric double-layer transistors (EDLTs), are solution-processable devices with a very simple structure. Therefore, it is necessary to apply this device structure into highly fluorescent organic materials for future printed applications. However, owing to compatibility problems between electrolytes and organic crystals, electrolyte-based single-crystal light-emitting devices have not yet been demonstrated. Here, we report on light-emitting devices based on organic single crystals and electrolytes. As the fluorescent materials, α,ω-bis(biphenylyl)terthiophene (BP3T) and 5,6,11,12-tetraphenylnaphthacene (rubrene) single crystals were selected. Using ionic liquids as electrolytes, we observed clear light emission from BP3T LECs and rubrene EDLTs.
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Parasitic neutron bragg reflections from large imperfect single crystals
Energy Technology Data Exchange (ETDEWEB)
Naguib, K.; Adib, M
1998-12-01
A formula is given which allows to calculate the contribution of the total Bragg scattering from different (hkl) planes to the neutron transmission through a large imperfect single crystals. The formula takes into account the crystal structure type, its mosaic spread value, the plane along which the crystal surface is cut along and its orientation with respect to the neutron beam direction. A computer program ISCANF-1 was developed to calculate the total parasitic scattering cross-section from different (hkl) planes as well as the nuclear and diffuse scattering cross-sections. The ISCANF-1 program was applied to calculate the neutron attenuation through Cu and Zn single crystals, each of them cut along (002) planes. The calculated values of the neutron transmission through Cu and Zn crystals were compared with the measured ones in the wavelength range 0.21-0.47 nm and 0.04-0.52 nm respectively. The measured and calculated values were found to be in reasonable agreement within the statistical accuracy. The computer program ISCANF-1 was also applied to investigate the effect of parasitic Bragg scattering on the neutron filtering characteristics of both Zn and Cu single crystals as a function of their physical parameters.
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Parasitic neutron bragg reflections from large imperfect single crystals
International Nuclear Information System (INIS)
Naguib, K.; Adib, M.
1998-01-01
A formula is given which allows to calculate the contribution of the total Bragg scattering from different (hkl) planes to the neutron transmission through a large imperfect single crystals. The formula takes into account the crystal structure type, its mosaic spread value, the plane along which the crystal surface is cut along and its orientation with respect to the neutron beam direction. A computer program ISCANF-1 was developed to calculate the total parasitic scattering cross-section from different (hkl) planes as well as the nuclear and diffuse scattering cross-sections. The ISCANF-1 program was applied to calculate the neutron attenuation through Cu and Zn single crystals, each of them cut along (002) planes. The calculated values of the neutron transmission through Cu and Zn crystals were compared with the measured ones in the wavelength range 0.21-0.47 nm and 0.04-0.52 nm respectively. The measured and calculated values were found to be in reasonable agreement within the statistical accuracy. The computer program ISCANF-1 was also applied to investigate the effect of parasitic Bragg scattering on the neutron filtering characteristics of both Zn and Cu single crystals as a function of their physical parameters
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Growth and microtopographic study of CuInSe{sub 2} single crystals
Energy Technology Data Exchange (ETDEWEB)
Chauhan, Sanjaysinh M.; Chaki, Sunil, E-mail: sunilchaki@yahoo.co.in; Deshpande, M. P. [Department of Physics, Sardar Patel University, Vallabh Vidyanagar, Gujarat - 388120 (India); Tailor, J. P. [Applied Physics Department, S.V.N.I.T., Surat, Gujarat - 395007 (India)
2016-05-23
The CuInSe{sub 2} single crystals were grown by chemical vapour transport (CVT) technique using iodine as transporting agent. The elemental composition of the as-grown CuInSe{sub 2} single crystals was determined by energy dispersive analysis of X-ray (EDAX). The unit cell crystal structure and lattice parameters were determined by X-ray diffraction (XRD) technique. The surface microtopographic study of the as-grown CuInSe{sub 2} single crystals surfaces were done to study the defects, growth mechanism, etc. of the CVT grown crystals.
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Mechanical properties of hydroxyapatite single crystals from nanoindentation data
Zamiri, A.; De, S.
2011-01-01
In this paper we compute elasto-plastic properties of hydroxyapatite single crystals from nanindentation data using a two-step algorithm. In the first step the yield stress is obtained using hardness and Young’s modulus data, followed by the computation of the flow parameters. The computational approach is first validated with data from existing literature. It is observed that hydroxyapatite single crystals exhibit anisotropic mechanical response with a lower yield stress along the [1010] crystallographic direction compared to the [0001] direction. Both work hardening rate and work hardening exponent are found to be higher for indentation along the [0001] crystallographic direction. The stress-strain curves extracted here could be used for developing constitutive models for hydroxyapatite single crystals. PMID:21262492
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Single-Crystal Diamond Nanobeam Waveguide Optomechanics
Directory of Open Access Journals (Sweden)
Behzad Khanaliloo
2015-12-01
Full Text Available Single-crystal diamond optomechanical devices have the potential to enable fundamental studies and technologies coupling mechanical vibrations to both light and electronic quantum systems. Here, we demonstrate a single-crystal diamond optomechanical system and show that it allows excitation of diamond mechanical resonances into self-oscillations with amplitude >200 nm. The resulting internal stress field is predicted to allow driving of electron spin transitions of diamond nitrogen-vacancy centers. The mechanical resonances have a quality factor >7×10^{5} and can be tuned via nonlinear frequency renormalization, while the optomechanical interface has a 150 nm bandwidth and 9.5 fm/sqrt[Hz] sensitivity. In combination, these features make this system a promising platform for interfacing light, nanomechanics, and electron spins.
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Ordered macro-microporous metal-organic framework single crystals
Shen, Kui
2018-01-16
We constructed highly oriented and ordered macropores within metal-organic framework (MOF) single crystals, opening up the area of three-dimensional-ordered macro-microporous materials (that is, materials containing both macro- and micropores) in single-crystalline form. Our methodology relies on the strong shaping effects of a polystyrene nanosphere monolith template and a double-solvent-induced heterogeneous nucleation approach. This process synergistically enabled the in situ growth of MOFs within ordered voids, rendering a single crystal with oriented and ordered macro-microporous structure. The improved mass diffusion properties of such hierarchical frameworks, together with their robust single-crystalline nature, endow them with superior catalytic activity and recyclability for bulky-molecule reactions, as compared with conventional, polycrystalline hollow, and disordered macroporous ZIF-8.
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Ordered macro-microporous metal-organic framework single crystals
Shen, Kui; Zhang, Lei; Chen, Xiaodong; Liu, Lingmei; Zhang, Daliang; Han, Yu; Chen, Junying; Long, Jilan; Luque, Rafael; Li, Yingwei; Chen, Banglin
2018-01-01
We constructed highly oriented and ordered macropores within metal-organic framework (MOF) single crystals, opening up the area of three-dimensional–ordered macro-microporous materials (that is, materials containing both macro- and micropores) in single-crystalline form. Our methodology relies on the strong shaping effects of a polystyrene nanosphere monolith template and a double-solvent–induced heterogeneous nucleation approach. This process synergistically enabled the in situ growth of MOFs within ordered voids, rendering a single crystal with oriented and ordered macro-microporous structure. The improved mass diffusion properties of such hierarchical frameworks, together with their robust single-crystalline nature, endow them with superior catalytic activity and recyclability for bulky-molecule reactions, as compared with conventional, polycrystalline hollow, and disordered macroporous ZIF-8.
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Ordered macro-microporous metal-organic framework single crystals
Shen, Kui; Zhang, Lei; Chen, Xiaodong; Liu, Lingmei; Zhang, Daliang; Han, Yu; Chen, Junying; Long, Jilan; Luque, Rafael; Li, Yingwei; Chen, Banglin
2018-01-01
We constructed highly oriented and ordered macropores within metal-organic framework (MOF) single crystals, opening up the area of three-dimensional-ordered macro-microporous materials (that is, materials containing both macro- and micropores) in single-crystalline form. Our methodology relies on the strong shaping effects of a polystyrene nanosphere monolith template and a double-solvent-induced heterogeneous nucleation approach. This process synergistically enabled the in situ growth of MOFs within ordered voids, rendering a single crystal with oriented and ordered macro-microporous structure. The improved mass diffusion properties of such hierarchical frameworks, together with their robust single-crystalline nature, endow them with superior catalytic activity and recyclability for bulky-molecule reactions, as compared with conventional, polycrystalline hollow, and disordered macroporous ZIF-8.
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Hydride vapor phase epitaxy growth of GaN, InGaN, ScN, and ScAIN
Bohnen, T.
2010-01-01
Chemical vapor deposition (CVD); hydride vapor phase epitaxy (HVPE); gallium nitride (GaN); indium gallium nitride (InGaN); scandium nitride (ScN); scandium aluminum nitride (ScAlN); semiconductors; thin films; nanowires; III nitrides; crystal growth - We studied the HVPE growth of different III
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Tzeng, Biing-Chiau; Chao, An
2015-01-26
The treatment of [AuCl(SMe2 )] with an equimolar amount of NaO5 NCS2 (O5 NCS2 =(aza-[18]crown-6)dithiocarbamate) in CH3 CN gave [Au2 (O5 NCS2 )2 ]⋅2 CH3 CN (2⋅2 CH3 CN), and its crystal structure displays a dinuclear gold(I)-azacrown ether ring and an intermolecular gold(I)⋅⋅⋅gold(I) contact of 2.8355(3) Å in crystal lattices. It is noted that two other single crystals of 2⋅tert-butylbenzene⋅H2 O and 2⋅0.5 m-xylene can be successfully obtained from a single-crystal-to-single-crystal (SCSC) transformation process by immersing single crystals of 2⋅2 CH3 CN in the respective solvents, and both also show intermolecular gold(I)⋅⋅⋅gold(I) contacts of 2.9420(5) and 2.890(2)-2.902(2) Å, respectively. Significantly, the emissions of all three 2⋅solvates are well correlated with their respective intermolecular gold(I)⋅⋅⋅gold(I) contacts, where such contacts increase with 2⋅2 CH3 CN (2.8355(3) Å)energies increase with 2⋅2 CH3 CN (602 nm)<2⋅0.5 m-xylene (583 nm)<2⋅tert-butylbenzene⋅H2 O (546 nm) as well. In this regard, we further examine the solvochromic luminescence for some other aromatics, and finally their emissions are within 546-602 nm. Obviously, the above results are mostly ascribed to the occurrence of intermolecular gold(I)⋅⋅⋅gold(I) contacts in 2⋅solvates, which are induced by the presence of various solvates in the solid state, as a key role to be responsible for their solvochromic luminescence. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Mesoscale martensitic transformation in single crystals of topological defects
Energy Technology Data Exchange (ETDEWEB)
Li, Xiao; Martínez-González, José A.; Hernández-Ortiz, Juan P.; Ramírez-Hernández, Abelardo; Zhou, Ye; Sadati, Monirosadat; Zhang, Rui; Nealey, Paul F.; de Pablo, Juan J.
2017-09-05
Liquid crystal blue phases (BPs) are highly ordered at two levels. Molecules exhibit orientational order at nanometer length scales, while chirality leads to ordered arrays of doubletwisted cylinders over micrometer scales. Past studies of polycrystalline BPs were challenged by grain boundaries between randomly oriented crystalline nanodomains. Here, the nucleation of BPs is controlled with considerable precision by relying on chemically nano-patterned surfaces, leading to macroscopic single-crystal BP specimens where the dynamics of meso-crystal formation can be directly observed. Theory and experiments show that transitions between two BPs having a different network structure proceed through local re-organization of the crystalline array, without diffusion of the double twisted cylinders. In solid crystals, martensitic transformations between crystal structures involve the concerted motion of a few atoms, without diffusion. The transformation between BPs, where crystal features arise in the sub-micron regime, is found to be martensitic in nature, with the diffusion-less feature associated to the collective behavior of the double twist cylinders. Single-crystal BPs are shown to offer fertile grounds for the study of directed crystal-nucleation and the controlled growth of soft matter.
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Feng, Wei; Wang, Zhigang; Zhang, Wenke
2017-02-28
Understanding the relationship between polymer chain conformation as well as the chain composition within the single crystal and the mechanical properties of the corresponding single polymer chain will facilitate the rational design of high performance polymer materials. Here three model systems of polymer single crystals, namely poly(ethylene oxide) (PEO), polyethylene (PE), and nylon-66 (PA66) have been chosen to study the effects of chain conformation, helical (PEO) versus planar zigzag conformation (PE, PA66), and chain composition (PE versus PA66) on the mechanical properties of a single polymer chain. To do that, steered molecular dynamics simulations were performed on those polymer single crystals by pulling individual polymer chains out of the crystals. Our results show that the patterns of force-extension curve as well as the chain moving mode are closely related to the conformation of the polymer chain in the single crystal. In addition, hydrogen bonds can enhance greatly the force required to stretch the polymer chain out of the single crystal. The dynamic breaking and reformation of multivalent hydrogen bonds have been observed for the first time in PA66 at the single molecule level.
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Two convenient low-temperature routes to single crystals of plutonium dioxide
Energy Technology Data Exchange (ETDEWEB)
Meredith, Nathan A. [Departments of Chemistry and Biochemistry, University of Notre Dame, Notre Dame, IN 46556 (United States); Wang, Shuao; Diwu, Juan [School of Radiation Medicine and Protection and School of Radiological and Interdisciplinary Sciences, Soochow University, Suzhou, Jiangsu 215123 (China); Albrecht-Schmitt, Thomas E., E-mail: talbrechtschmitt@gmail.com [Department of Chemistry and Biochemistry, Florida State University, Tallahassee, FL 32306 (United States)
2014-11-15
Highlights: • Two low-temperature routes to the growth single crystals of plutonium dioxide. • Safer methods of preparing PuO{sub 2} single crystals that do not involve solid-state synthetic techniques. • Solvothermal crystal growth of plutonium dioxide. - Abstract: During the solvothermal synthesis of a low-dimensional borate, KB{sub 5}O{sub 7}(OH){sub 2}⋅2H{sub 2}O, in the presence of Pu(III), single crystals of plutonium dioxide unexpectedly formed. Single crystals of PuO{sub 2} also formed during the hydrothermal synthesis of another borate, Na{sub 2}B{sub 5}O{sub 8}(OH)⋅2H{sub 2}O, in the presence of Pu(III). The reactions were conducted at 170 °C and 150 °C, respectively, which are much lower temperature than previously reported preparations of crystalline PuO{sub 2}. Yellow–green crystals with a tablet habit were characterized by single crystal X-ray diffraction and solid-state UV–vis–NIR absorption spectroscopy. The crystal structure was solved by direct methods with R{sub 1} = 1.26% for 19 unique observed reflections. PuO{sub 2} is cubic, space group Fm3{sup ‾}m, and adopts the fluorite structure type. The lattice parameter was determined to be a = 5.421(5) Å giving a volume of 159.3(2) Å{sup 3}. The absorption spectrum is consistent with Pu(IV)
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High definition TV projection via single crystal faceplate technology
Kindl, H. J.; St. John, Thomas
1993-03-01
Single crystal phosphor faceplates are epitaxial phosphors grown on crystalline substrates with the advantages of high light output, resolution, and extended operational life. Single crystal phosphor faceplate industrial technology in the United States is capable of providing a faceplate appropriate to the projection industry of up to four (4) inches in diameter. Projection systems incorporating cathode ray tubes utilizing single crystal phosphor faceplates will produce 1500 lumens of white light with 1000 lines of resolution, non-interlaced. This 1500 lumen projection system will meet all of the currently specified luminance and resolution requirements of Visual Display systems for flight simulators. Significant logistic advantages accrue from the introduction of single crystal phosphor faceplate CRT's. Specifically, the full performance life of a CRT is expected to increase by a factor of five (5); ie, from 2000 to 10,000 hours of operation. There will be attendant reductions in maintenance time, spare CRT requirements, system down time, etc. The increased brightness of the projection system will allow use of lower gain, lower cost simulator screen material. Further, picture performance characteristics will be more balanced across the full simulator.
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Improved InGaN/GaN quantum wells on treated GaN template with a Ga-rich GaN interlayer
International Nuclear Information System (INIS)
Fang, Zhilai; Shen, Xiyang; Wu, Zhengyuan; Zhang, Tong-Yi
2015-01-01
Treated GaN template was achieved by in situ droplet epitaxy of a Ga-rich GaN interlayer on the conventional GaN template. InGaN/GaN quantum wells (QWs) were grown on the conventional and treated GaN templates under the same growth conditions and then comprehensively characterized. The indium homogeneity in the InGaN layers and the interface sharpness between InGaN and GaN layers of the InGaN/GaN QWs on the treated GaN template were significantly improved. The emission intensity from the InGaN/GaN QWs on the treated GaN template was enhanced by 20% than that on the conventional GaN template, which was attributed to the strain reduction and the improvement in crystalline quality. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
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Perovskite single crystals and thin films for optoelectronic devices (Conference Presentation)
Li, Gang; Han, Qifeng; Yang, Yang; Bae, Sang-Hoon; Sun, Pengyu
2016-09-01
Hybrid organolead trihalide perovskite (OTP) solar cells have developed as a promising candidate in photovoltaics due to their excellent properties including a direct bandgap, strong absorption coefficient, long carrier lifetime, and high mobility. Most recently, formamidinium (NH2CH=NH2+ or FA) lead iodide (FAPbI3) has attracted significant attention due to several advantages: (1) the larger organic FA cation can replace the MA cation and form a more symmetric crystal structure, (2) the smaller bandgap of FAPbI3 allows for near infrared (NIR) absorption, and (3) FAPbI3 has an elevated decomposition temperature and thus potential to improve stability. Single crystals provide an excellent model system to study the intrinsic electrical and optical properties of these materials due to their high purity, which is particularly important to understand the limits of these materials. In this work, we report the growth of large ( 5 millimeter size) single crystal FAPbI3 using a novel liquid based crystallization method. The single crystal FAPbI3 demonstrated a δ-phase to α-phase transition with a color change from yellow to black when heated to 185°C within approximately two minutes. The crystal structures of the two phases were identified and the PL emission peak of the α-phase FAPbI3 (820 nm) shows clear red-shift compared to the FAPbI3 thin film (805 nm). The FAPbI3 single crystal shows a long carrier lifetime of 484 ns, a high carrier mobility of 4.4 cm2·V-1·s-1, and even more interestingly a conductivity of 1.1 × 10-7(ohm·cm)-1, which is approximately one order of magnitude higher than that of the MAPbI3 single crystal. Finally, high performance photoconductivity type photodetectors were successfully demonstrated using the single crystal FAPbI3.
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Elastic properties of Ti-24Nb-4Zr-8Sn single crystals with bcc crystal structure
International Nuclear Information System (INIS)
Zhang, Y.W.; Li, S.J.; Obbard, E.G.; Wang, H.; Wang, S.C.; Hao, Y.L.; Yang, R.
2011-01-01
Research highlights: → The single crystals of Ti2448 alloy with the bcc crystal structure were prepared. → The elastic moduli and constants were measured by several resonant methods. → The crystal shows significant elastic asymmetry in tension and compression. → The crystal exhibits weak nonlinear elasticity with large elastic strain ∼2.5%. → The crystal has weak atomic interactions against crystal distortion to low symmetry. - Abstract: Single crystals of Ti2448 alloy (Ti-24Nb-4Zr-8Sn in wt.%) were grown successfully using an optical floating-zone furnace. Several kinds of resonant methods gave consistent Young's moduli of 27.1, 56.3 and 88.1 GPa and shear moduli of 34.8, 11.0 and 14.6 GPa for the , and oriented single crystals, and C 11 , C 12 and C 44 of 57.2, 36.1 and 35.9 GPa respectively. Uniaxial testing revealed asymmetrical elastic behaviors of the crystals: tension caused elastic softening with a large reversible strain of ∼4% and a stress plateau of ∼250 MPa, whereas compression resulted in gradual elastic stiffening with much smaller reversible strain. The crystals exhibited weak nonlinear elasticity with a large elastic strain of ∼2.5% and a high strength, approaching ∼20% and ∼30% of its ideal shear and ideal tensile strength respectively. The crystals showed linear elasticity with a small elastic strain of ∼1%. These elastic deformation characteristics have been interpreted in terms of weakened atomic interactions against crystal distortion to low crystal symmetry under external applied stresses. These results are consistent with the properties of polycrystalline Ti2448, including high strength, low elastic modulus, large recoverable strain and weak strengthening effect due to grain refinement.
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International Nuclear Information System (INIS)
Wong, R.K.
2000-01-01
After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover
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Energy Technology Data Exchange (ETDEWEB)
Wong, Raechelle Kimberly [Univ. of California, Berkeley, CA (United States)
2000-04-01
After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover.
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Defect free single crystal thin layer
Elafandy, Rami Tarek Mahmoud
2016-01-28
A gallium nitride film can be a dislocation free single crystal, which can be prepared by irradiating a surface of a substrate and contacting the surface with an etching solution that can selectively etch at dislocations.
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Defect free single crystal thin layer
Elafandy, Rami Tarek Mahmoud; Ooi, Boon S.
2016-01-01
A gallium nitride film can be a dislocation free single crystal, which can be prepared by irradiating a surface of a substrate and contacting the surface with an etching solution that can selectively etch at dislocations.
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Arakere, Nagaraj K.; Swanson, Gregory R.
2000-01-01
High Cycle Fatigue (HCF) induced failures in aircraft gas-turbine engines is a pervasive problem affecting a wide range of components and materials. HCF is currently the primary cause of component failures in gas turbine aircraft engines. Turbine blades in high performance aircraft and rocket engines are increasingly being made of single crystal nickel superalloys. Single-crystal Nickel-base superalloys were developed to provide superior creep, stress rupture, melt resistance and thermomechanical fatigue capabilities over polycrystalline alloys previously used in the production of turbine blades and vanes. Currently the most widely used single crystal turbine blade superalloys are PWA 1480/1493 and PWA 1484. These alloys play an important role in commercial, military and space propulsion systems. PWA1493, identical to PWA1480, but with tighter chemical constituent control, is used in the NASA SSME (Space Shuttle Main Engine) alternate turbopump, a liquid hydrogen fueled rocket engine. Objectives for this paper are motivated by the need for developing failure criteria and fatigue life evaluation procedures for high temperature single crystal components, using available fatigue data and finite element modeling of turbine blades. Using the FE (finite element) stress analysis results and the fatigue life relations developed, the effect of variation of primary and secondary crystal orientations on life is determined, at critical blade locations. The most advantageous crystal orientation for a given blade design is determined. Results presented demonstrates that control of secondary and primary crystallographic orientation has the potential to optimize blade design by increasing its resistance to fatigue crack growth without adding additional weight or cost.
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Hsiao, F.-M.; Schnedler, M.; Portz, V.; Huang, Y.-C.; Huang, B.-C.; Shih, M.-C.; Chang, C.-W.; Tu, L.-W.; Eisele, H.; Dunin-Borkowski, R. E.; Ebert, Ph.; Chiu, Y.-P.
2017-01-01
We demonstrate the potential of sub-bandgap laser-excited cross-sectional scanning tunneling microscopy and spectroscopy to investigate the presence of defect states in semiconductors. The characterization method is illustrated on GaN layers grown on Si(111) substrates without intentional buffer layers. According to high-resolution transmission electron microscopy and cathodoluminescence spectroscopy, the GaN layers consist of nanoscale wurtzite and zincblende crystallites with varying crystal orientations and hence contain high defect state densities. In order to discriminate between band-to-band excitation and defect state excitations, we use sub-bandgap laser excitation. We probe a clear increase in the tunnel current at positive sample voltages during sub-bandgap laser illumination for the GaN layer with high defect density, but no effect is found for high quality GaN epitaxial layers. This demonstrates the excitation of free charge carriers at defect states. Thus, sub-bandgap laser-excited scanning tunneling spectroscopy is a powerful complimentary characterization tool for defect states.
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Abdullah, Q N; Yam, F K; Hassan, Z; Bououdina, M
2015-12-15
Superior sensitivity towards H2 gas was successfully achieved with Pt-decorated GaN nanowires (NWs) gas sensor. GaN NWs were fabricated via chemical vapor deposition (CVD) route. Morphology (field emission scanning electron microscopy and transmission electron microscopy) and crystal structure (high resolution X-ray diffraction) characterizations of the as-synthesized nanostructures demonstrated the formation of GaN NWs having a wurtzite structure, zigzaged shape and an average diameter of 30-166nm. The Pt-decorated GaN NWs sensor shows a high response of 250-2650% upon exposure to H2 gas concentration from 7 to 1000ppm respectively at room temperature (RT), and then increases to about 650-4100% when increasing the operating temperature up to 75°C. The gas-sensing measurements indicated that the Pt-decorated GaN NWs based sensor exhibited efficient detection of H2 at low concentration with excellent sensitivity, repeatability, and free hysteresis phenomena over a period of time of 100min. The large surface-to-volume ratio of GaN NWs and the catalytic activity of Pt metal are the most influential factors leading to the enhancement of H2 gas-sensing performances through the improvement of the interaction between the target molecules (H2) and the sensing NWs surface. The attractive low-cost, low power consumption and high-performance of the resultant decorated GaN NWs gas sensor assure their uppermost potential for H2 gas sensor working at low operating temperature. Copyright © 2015 Elsevier Inc. All rights reserved.
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Investigations on the nucleation kinetics of γ-glycine single crystal
International Nuclear Information System (INIS)
Yogambal, C.; Rajan Babu, D.; Ezhil Vizhi, R.
2014-01-01
Single crystals of γ-glycine were grown by slow evaporation technique. The crystalline system was confirmed by single crystal X-ray diffraction analysis. The optical absorption study has shown that the grown crystal possesses lower cut-off wavelength. Solubility and metastable zone width were estimated for different temperatures. The induction period of title compound was determined by varying the temperature and concentration. Nucleation parameters such as Gibbs volume free energy change (ΔG v ), interfacial tension (γ), critical free energy change of the nucleus (ΔG ⁎ ), nucleation rate (J), number of molecules in the critical nucleus (i ⁎ ) have been calculated for the aqueous solution grown γ-glycine single crystals. The second harmonic generation (SHG) of γ-glycine was confirmed by Q-switched Nd:YAG laser technique
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Polarized spectral properties of Sm3+:LiYF4 crystal
International Nuclear Information System (INIS)
Wang, G.Q.; Lin, Y.F.; Gong, X.H.; Chen, Y.J.; Huang, J.H.; Luo, Z.D.; Huang, Y.D.
2014-01-01
A trivalent samarium-doped LiYF 4 single crystal was grown by the vertical Bridgman technique. Its polarized absorption and fluorescence spectra and fluorescence decay curves were recorded at room temperature. On the basis of the Judd–Ofelt theory, the spectral parameters of the Sm 3+ :LiYF 4 crystal were calculated. The emission cross sections for the 4 G 5/2 → 6 H J (J=5/2, 7/2. 9/2, and 11/2) transitions of special interest for visible laser application were obtained by the Fuchtbauer–Ladenburg formula. -- Highlights: • Polarized spectral properties of Sm 3+ :LiYF 4 crystal at room temperature were analyzed in detail. • The emission cross sections for the transitions of special interest for visible laser application are calculated. • Sm 3+ :LiYF 4 is a promising laser material for 401 nm GaN LD pumped 605 nm visible laser
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Identification of yellow luminescence centers in Be-doped GaN through pressure-dependent studies
Teisseyre, Henryk; Lyons, John L.; Kaminska, Agata; Jankowski, Dawid; Jarosz, Dawid; Boćkowski, Michał; Suchocki, Andrzej; Van de Walle, Chris G.
2017-06-01
Effective acceptor doping of wide-band-gap semiconductors is still an outstanding problem. Beryllium has been suggested as a shallow acceptor in GaN, but despite sporadic announcements, Be-induced p-type doping has never been practically realized. Be-doped GaN possesses two luminescence bands; one at 3.38 eV and a second near 2.2 eV at an energy close to that of the parasitic yellow luminescence often found in undoped GaN crystals. We have performed high hydrostatic pressure studies of bulk, Be-doped gallium nitride crystals using the diamond anvil cell technique. We observed a splitting of the yellow luminescence line under hydrostatic pressure into two components, one which is strongly dependent on applied pressure and another whose pressure dependence is more modest. Together with hybrid functional calculations, we attribute the strongly-varying component to the beryllium-oxygen complex. The second component of the yellow luminescence possesses very similar pressure behavior to the yellow luminescence observed in undoped samples grown by the same method, behavior which we find consistent with the CN acceptor. At higher pressure, we observe the vanishing of yellow luminescence and a rapid increase in luminescence intensity of the UV line. We explain this as the pressure-induced transformation of the Be-O complex from a highly localized state with large lattice relaxation to a delocalized state with limited lattice relaxation.
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International Nuclear Information System (INIS)
Arun Kumar, R.; Senthilkumar, M.; Dhanasekaran, R.
2007-01-01
Yttrium calcium oxy borate single crystals were grown by the flux technique for the first time. Polycrystalline YCOB material was prepared by solid state reaction method. Single crystals of YCOB were grown using boron-tri-oxide flux. Several transparent single crystals of dimensions 10 x 5 x 5 mm 3 were obtained. The grown crystals were characterized by powder XRD and UV- VIS-NIR studies. The results of powder XRD confirm the crystalline structure of YCOB. The UV- VIS-NIR transmission spectrum reveals that the crystal is highly transparent (above 75%) from ultraviolet (220 nm) to near IR regions enabling it as a suitable candidate for high power UV applications
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High Performance Relaxor-Based Ferroelectric Single Crystals for Ultrasonic Transducer Applications
Directory of Open Access Journals (Sweden)
Yan Chen
2014-07-01
Full Text Available Relaxor-based ferroelectric single crystals Pb(Mg1/3Nb2/3O3-PbTiO3 (PMN-PT have drawn much attention in the ferroelectric field because of their excellent piezoelectric properties and high electromechanical coupling coefficients (d33~2000 pC/N, kt~60% near the morphotropic phase boundary (MPB. Ternary Pb(In1/2Nb1/2O3-Pb(Mg1/3Nb2/3O3-PbTiO3 (PIN-PMN-PT single crystals also possess outstanding performance comparable with PMN-PT single crystals, but have higher phase transition temperatures (rhombohedral to tetragonal Trt, and tetragonal to cubic Tc and larger coercive field Ec. Therefore, these relaxor-based single crystals have been extensively employed for ultrasonic transducer applications. In this paper, an overview of our work and perspectives on using PMN-PT and PIN-PMN-PT single crystals for ultrasonic transducer applications is presented. Various types of single-element ultrasonic transducers, including endoscopic transducers, intravascular transducers, high-frequency and high-temperature transducers fabricated using the PMN-PT and PIN-PMN-PT crystals and their 2-2 and 1-3 composites are reported. Besides, the fabrication and characterization of the array transducers, such as phased array, cylindrical shaped linear array, high-temperature linear array, radial endoscopic array, and annular array, are also addressed.
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Investigation of different mechanisms of GaN growth induced on AlN and GaN nucleation layers
International Nuclear Information System (INIS)
Tasco, V.; Campa, A.; Tarantini, I.; Passaseo, A.; Gonzalez-Posada, F.; Munoz, E.; Redondo-Cubero, A.; Lorenz, K.; Franco, N.
2009-01-01
The evolution of GaN growth on AlN and GaN nucleation layers is compared through morphological and structural analyses, including ion beam analysis. By using AlN nucleation layer grown at high temperature, improved crystalline quality is exhibited by 300 nm thin GaN epilayers. GaN (002) x-ray rocking curve as narrow as 168 arc sec and atomic-step surface morphology characterize such a thin GaN film on AlN. Defects are strongly confined into the first 50 nm of growth, whereas a fast laterally coherent growth is observed when increasing thickness, as an effect of high temperature AlN surface morphology and Ga adatom dynamics over this template
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CH3NH3PbCl3 Single Crystals: Inverse Temperature Crystallization and Visible-Blind UV-Photodetector
Maculan, Giacomo; Sheikh, Arif D.; Abdelhady, Ahmed L.; Saidaminov, Makhsud I.; Haque, Mohammed; Banavoth, Murali; Alarousu, Erkki; Mohammed, Omar F.; Wu, Tao; Bakr, Osman
2015-01-01
a new method of sizeable CH3NH3PbCl3 single crystal growth based on retrograde solubility behavior of hybrid perovskites. We show, for the first time, the energy band structure, charge-carrier recombination and transport properties of single crystal
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Highly efficient single-pass sum frequency generation by cascaded nonlinear crystals
DEFF Research Database (Denmark)
Hansen, Anders Kragh; Andersen, Peter E.; Jensen, Ole Bjarlin
2015-01-01
, despite differences in the phase relations of the involved fields. An unprecedented 5.5 W of continuous-wave diffraction-limited green light is generated from the single-pass sum frequency mixing of two diode lasers in two periodically poled nonlinear crystals (conversion efficiency 50%). The technique......The cascading of nonlinear crystals has been established as a simple method to greatly increase the conversion efficiency of single-pass second-harmonic generation compared to a single-crystal scheme. Here, we show for the first time that the technique can be extended to sum frequency generation...... is generally applicable and can be applied to any combination of fundamental wavelengths and nonlinear crystals....
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Synthetic Strategies and Applications of GaN Nanowires
Directory of Open Access Journals (Sweden)
Guoquan Suo
2014-01-01
Full Text Available GaN is an important III-V semiconductor material with a direct band gap of 3.4 eV at 300 K. The wide direct band gap makes GaN an attractive material for various applications. GaN nanowires have demonstrated significant potential as fundamental building blocks for nanoelectronic and nanophotonic devices and also offer substantial promise for integrated nanosystems. In this paper, we provide a comprehensive review on the general synthetic strategies, characterizations, and applications of GaN nanowires. We first summarize several growth techniques of GaN nanowires. Subsequently, we discuss mechanisms involved to generate GaN nanowires from different synthetic schemes and conditions. Then we review some characterization methods of GaN nanowires. Finally, several kinds of main applications of GaN nanowires are discussed.
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International Nuclear Information System (INIS)
Montney, Matthew R.; Supkowski, Ronald M.; Staples, Richard J.; LaDuca, Robert L.
2009-01-01
Hydrothermal reaction of divalent metal chlorides with glutaric acid and 4,4'-dipyridylamine (dpa) has afforded an isostructural family of coordination polymers with formulation [M(glu)(dpa)] n (M=Co (1), Ni (2), Cu (3); glu=glutarate). Square pyramidal coordination is seen in 1-3, with semi-ligation of a sixth donor to produce a '5+1' extended coordination sphere. Neighboring metal atoms are linked into 1D [M(glu)] n neutral chains through chelating/monodentate bridging glutarate moieties with a syn-anti binding mode, and semi-chelation of the pendant carboxylate oxygen. These chains further connect into 2D layers through dipodal dpa ligands. Neighboring layers stack into the pseudo 3D crystal structure of 1-3 through supramolecular hydrogen bonding between dpa amine units and the semi-chelated glutarate oxygen atoms. The variable temperature magnetic behavior of 1-3 was explored and modeled as infinite 1D Heisenberg chains. Notably, complex 3 undergoes a thermally induced single crystal-to-single crystal transformation between centric and acentric space groups, with a conformationally disordered unilayer structure at 293 K and an ordered bilayer structure at 173 K. All materials were further characterized via infrared spectroscopy and elemental and thermogravimetric analyses. - Graphical abstract: The coordination polymers [M(glu)(dpa)] n (M=Co (1), Ni (2), Cu (3); glu=glutarate, dpa=4,4'-dipyridylamine) exhibit 2D layer structures based on 1D [M(glu)] n chains linked through dpa tethers. Antiferromagnetic coupling is observed for 2 and 3, while ferromagnetism is predominant in 1. Compound 3 undergoes a thermally induced single crystal-to-single crystal transformation from an acentric to a centrosymmetric space group
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Irradiation creep in zirconium single crystals
International Nuclear Information System (INIS)
MacEwen, S.R.; Fidleris, V.
1976-07-01
Two identical single crystals of crystal bar zirconium have been creep tested in reactor. Both specimens were preirradiated at low stress to a dose of about 4 x 10 23 n/m 2 (E > 1 MeV), and were then loaded to 25 MPa. The first specimen was loaded with reactor at full power, the second during a shutdown. The loading strain for both crystals was more than an order of magnitude smaller than that observed when an identical unirradiated crystal was loaded to the same stress. Both crystals exhibited periods of primary creep, after which their creep rates reached nearly constant values when the reactor was at power. During shutdowns the creep rates decreased rapidly with time. Electron microscopy revealed that the irradiation damage consisted of prismatic dislocation loops, approximately 13.5 nm in diameter. Cleared channels, identified as lying on (1010) planes, were also observed. The results are discussed in terms of the current theories for flux enhanced creep in the light of the microstructures observed. (author)
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A DFT study on NEA GaN photocathode with an ultrathin n-type Si-doped GaN cap layer
Xia, Sihao; Liu, Lei; Kong, Yike; Diao, Yu
2016-10-01
Due to the drawbacks of conventional negative electron affinity (NEA) GaN photocathodes activated by Cs or Cs/O, a new-type NEA GaN photocathodes with heterojunction surface dispense with Cs activation are proposed. This structure can be obtained through the coverage of an ultrathin n-type Si-doped GaN cap layer on the p-type Mg-doped GaN emission layer. The influences of the cap layer on the photocathode are calculated using DFT. This study indicates that the n-type cap layer can promote the photoemission characteristics of GaN photocathode and demonstrates the probability of the preparation of a NEA GaN photocathode with an n-type cap layer.
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Patterning of Perovskite Single Crystals
Corzo, Daniel
2017-06-12
As the internet-of-things hardware integration continues to develop and the requirements for electronics keep diversifying and expanding, the necessity for specialized properties other than the classical semiconductor performance becomes apparent. The success of emerging semiconductor materials depends on the manufacturability and cost as much as on the properties and performance they offer. Solution-based semiconductors are an emerging concept that offers the advantage of being compatible with large-scale manufacturing techniques and have the potential to yield high-quality electronic devices at a lower cost than currently available solutions. In this work, patterns of high-quality MAPbBr3 perovskite single crystals in specific locations are achieved through the modification of the substrate properties and solvent engineering. The fabrication of the substrates involved modifying the surface adhesion forces through functionalization with self-assembled monolayers and patterning them by photolithography processes. Spin coating and blade coating were used to deposit the perovskite solution on the modified silicon substrates. While single crystal perovskites were obtained with the modification of substrates alone, solvent engineering helped with improving the Marangoni flows in the deposited droplets by increasing the contact angle and lowering the evaporation rate, therefore controlling and improving the shape of the grown perovskite crystals. The methodology is extended to other types of perovskites such as the transparent MAPbCl3 and the lead-free MABi2I9, demonstrating the adaptability of the process. Adapting the process to electrode arrays opened up the path towards the fabrication of optoelectronic devices including photodetectors and field-effect transistors, for which the first iterations are demonstrated. Overall, manufacturing and integration techniques permitting the fabrication of single crystalline devices, such as the method in this thesis work, are
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Growth and characterization of nonlinear optical single crystals: bis ...
Indian Academy of Sciences (India)
Administrator
molecules have received great attention for NLO applica- tions. However ... Figure 3. Single crystals of bis(cyclohexylammonium) terephthalate (crystal a) and cyclohexylammo- .... from ground state to higher energy states.17 Optical window ...
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Electrolytic coloration and spectral properties of hydroxyl-doped potassium chloride single crystals
International Nuclear Information System (INIS)
Gu Hongen; Wu Yanru
2011-01-01
Hydroxyl-doped potassium chloride single crystals are colored electrolytically at various temperatures and voltages using a pointed cathode and a flat anode. Characteristic OH - spectral band is observed in the absorption spectrum of uncolored single crystal. Characteristic O - , OH - , U, V 2 , V 3 , O 2- -V a + , F, R 2 and M spectral bands are observed simultaneously in absorption spectra of colored single crystals. Current-time curve for electrolytic coloration of hydroxyl-doped potassium chloride single crystal and its relationship with electrolytic coloration process are given. Production and conversion of color centers are explained. - Highlights: → Expanded the traditional electrolysis method. → Hydroxyl-doped potassium chloride crystals were colored electrolytically for the first time. → Useful V, F and F-aggregate color centers were produced in colored crystals. → V color centers were produced directly and F and F-aggregate color centers indirectly.
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X-ray dosimetry of TlGaSe2 single crystals
International Nuclear Information System (INIS)
Kerimova, E.M.; Mustafaeva, S.N.; Mamedbeili, S.D.; Jabarov, J.N.; Iskenderova, P.M.; Kazimov, S.B.
2002-01-01
TlGaSe 2 compound belongs to group of layered semiconductors of A 3 B 3 C 2 6 -type. Photoelectric and optical properties of TlGaSe 2 single crystals were investigated in detail. Influence of gamma-, electron and neutron radiation on photoelectric properties of TlGaSe 2 single crystals is investigated too. The present work deals with experimental results relative to X-ray dosimetric characteristics of TlGaSe 2 crystals at 300 K. X-ray conductivity and X-ray dosimetric characteristic measurements are carried out in low load resistance regime. The source of X-ray radiation is the installation of X-ray diffraction analysis (URS-55a) with the BCV-2(Cu). Intensity of X-ray radiation (E) is regulated by measurement with current variation in tube at each given value of X-ray radiation dose E (R/min) are measured by crystal dosimeter DRGZ-02. X-ray conductivity coefficients K σ characterising X-ray sensitivity of investigated crystals are determined as the relative change of conductivity under X-ray radiation a per dose. There have been determined values of characteristic coefficients of TlGaSe 2 single crystal X-ray conductivity at different values of accelerating voltage (V a ) on the tube and corresponding doses of X-ray radiation. Analysis of obtained data showed that X-ray conductivity coefficients K σ in studied crystals are regularly decreased (from 0.276 to 0.033) as with the rise of dose (E=0.75-78.0 R/min) as with the increase of values of V a on X-ray tube (V a =254-50 keV). One of the possible reasons of observed regularities is that X-ray conductivity in investigated crystals, especially at comparatively low V a is due predominantly to radiation of thin layer of crystal. In this case with the rise of radiation intensity there have been started to prevail the mechanism of surface quadratic recombination which leads to observed decrease of X-ray conductivity. With the rise of accelerating potential 'effective hardness' is increased, as a result of which there
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Laser generation in opal-like single-crystal and heterostructure photonic crystals
Kuchyanov, A. S.; Plekhanov, A. I.
2016-11-01
This study describes the laser generation of a 6Zh rhodamine in artificial opals representing single-crystal and heterostructure films. The spectral and angular properties of emission and the threshold characteristics of generation are investigated. In the case where the 6Zh rhodamine was in a bulk opal, the so-called random laser generation was observed. In contrast to this, the laser generation caused by a distributed feedback inside the structure of the photonic bandgap was observed in photonic-crystal opal films.
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Laser induced single-crystal transition in polycrystalline silicon
International Nuclear Information System (INIS)
Vitali, G.; Bertolotti, M.; Foti, G.; Rimini, E.
1978-01-01
Transition to single crystal of polycrystalline Si material underlying a Si crystal substrate of 100 orientation was obtained via laser irradiation. The changes in the structure were analyzed by reflection high energy electron diffraction and by channeling effect technique using 2.0 MeV He Rutherford scattering. The power density required to induce the transition in a 4500 A thick polycrystalline layer is about 70 MW/cm 2 (50ns). The corresponding amorphous to single transition has a threshold of about 45 MW/cm 2 . (orig.) 891 HPOE [de
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Cyclic saturation dislocation structures of multiple-slip-oriented copper single crystals
International Nuclear Information System (INIS)
Li, X.W.; Chinese Academy of Sciences, Shenyang; Umakoshi, Y.; Li, S.X.; Wang, Z.G.
2001-01-01
The dislocation structures of [011] and [ anti 111] multiple-slip-oriented Cu single crystals cyclically saturated at constant plastic strain amplitudes were investigated through transmission electron microscopy. The results obtained on [001] multiple-slip-oriented Cu single crystals were also included for summarization. Unlike the case for single-slip-oriented Cu single crystals, the crystallographic orientation has a strong effect on the saturation dislocation structure in these three multiple-slip-oriented crystals. For the [011] crystal, different dislocation patterns such as veins, PSB walls, labyrinths and PSB ladders were observed. The formation of PSB ladders is believed to be a major reason for the existence of a plateau region in the cyclic stress-strain (CSS) curve for the [011] crystal. The cyclic saturation dislocation structure of a [ anti 111] crystal cycled at a low applied strain amplitude γ pl of 2.0 x 10 -4 was found to consist of irregular cells, which would develop into a more regular arrangement (e. g. PSB ladder-like) and the scale of which tends to decrease with increasing γ pl . Finally, three kinds of representative micro-deformation mode were summarized and termed as labyrinth-mode (or [001]-mode), cell-mode (or [ anti 111]-mode) and PSB ladder-mode (or [011]-mode). (orig.)
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Sample Size Induced Brittle-to-Ductile Transition of Single-Crystal Aluminum Nitride
2015-08-01
ARL-RP-0528 ● AUG 2015 US Army Research Laboratory Sample Size Induced Brittle-to- Ductile Transition of Single-Crystal Aluminum...originator. ARL-RP-0528 ● AUG 2015 US Army Research Laboratory Sample Size Induced Brittle-to- Ductile Transition of Single-Crystal...Sample Size Induced Brittle-to- Ductile Transition of Single-Crystal Aluminum Nitride 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT
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Optical nonlinearities and ultrafast all-optical switching of m-plane GaN in the near-infrared
Energy Technology Data Exchange (ETDEWEB)
Fang, Yu; Zhou, Feng; Yang, Junyi; Yang, Yong [College of Physics, Optoelectronics and Energy, Soochow University, 215006 Suzhou (China); Xiao, Zhengguo; Wu, Xingzhi [Department of Physics, Harbin Institute of Technology, 150001 Harbin (China); Song, Yinglin, E-mail: ylsong@hit.edu.cn [College of Physics, Optoelectronics and Energy, Soochow University, 215006 Suzhou (China); Department of Physics, Harbin Institute of Technology, 150001 Harbin (China)
2015-06-22
We reported a systematic investigation on the three-photon absorption (3PA) spectra and wavelength dispersion of Kerr refraction of bulk m-plane GaN crystal with both polarization E⊥c and E//c by femtosecond Z-scan technique in the near-infrared region from 760 to 1030 nm. Both 3PA spectra and Kerr refraction dispersion were in good agreement with two-band models. The calculated nonlinear figure of merit and measured ultrafast nonlinear refraction dynamics via femtosecond pump-probe with phase object method revealed that m-plane GaN would be a promising candidate for ultrafast all-optical switching and autocorrelation applications at telecommunication wavelengths.
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Oriented growing and anisotropy of emission properties of lanthanum hexaboride single crystals
International Nuclear Information System (INIS)
Lazorenko, V.I.; Lotsko, D.V.; Platonov, V.F.; Kovalev, A.V.; Galasun, A.P.; Matvienko, A.A.; Klinkov, A.E.
1987-01-01
Single crystals of lanthanum hexaboride with preset crystallographic orientation are grown by the method of crucible-free zone melting. It is shown that oriented growing of single crystals of the given compound is possible only when using seed crystals of the required orientation because no predominant orientation of the LaB 6 growth is found in case of spontaneous crystallization. Orientation of spontaneously growing LaB 6 crystals does not depend on their growth rate, degree of the melt diffusion annealing, purity of the inital powder. Anisotropy of the electronic work function for single crystal lanthanum hexaboride is confirmed. Its value grows as (100)<(110)<(111). Conditions of the preliminary thermovacuum purification of the surface are shown to affect the measured work function
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Neutron Transmission of Single-crystal Sapphire Filters
Adib, M.; Kilany, M.; Habib, N.; Fathallah, M.
2005-05-01
An additive formula is given that permits the calculation of the nuclear capture, thermal diffuse and Bragg scattering cross-sections as a function of sapphire temperature and crystal parameters. We have developed a computer program that allows calculations of the thermal neutron transmission for the sapphire rhombohedral structure and its equivalent trigonal structure. The calculated total cross-section values and effective attenuation coefficient for single-crystalline sapphire at different temperatures are compared with measured values. Overall agreement is indicated between the formula and experimental data. We discuss the use of sapphire single crystal as a thermal neutron filter in terms of the optimum cystal thickness, mosaic spread, temperature, cutting plane and tuning for efficient transmission of thermal-reactor neutrons.
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Effect of different electrolytes on porous GaN using photo-electrochemical etching
Energy Technology Data Exchange (ETDEWEB)
Al-Heuseen, K., E-mail: kalhussen@yahoo.com [Nano-Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia); Hashim, M.R. [Nano-Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia); Ali, N.K. [Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Department of Electronic Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia)
2011-05-01
This article reports the properties and the behavior of GaN during the photoelectrochemical etching process using four different electrolytes. The measurements show that the porosity strongly depends on the electrolyte and highly affects the surface morphology of etched samples, which has been revealed by scanning electron microscopy (SEM) images. Peak intensity of the photoluminescence (PL) spectra of the porous GaN samples was observed to be enhanced and strongly depend on the electrolytes. Among the samples, there is a little difference in the peak position indicating that the change of porosity has little influence on the PL peak shift, while it highly affecting the peak intensity. Raman spectra of porous GaN under four different solution exhibit phonon mode E{sub 2} (high), A{sub 1} (LO), A{sub 1} (TO) and E{sub 2} (low). There was a red shift in E{sub 2} (high) in all samples, indicating a relaxation of stress in the porous GaN surface with respect to the underlying single crystalline epitaxial GaN. Raman and PL intensities were high for samples etched in H{sub 2}SO{sub 4}:H{sub 2}O{sub 2} and KOH followed by the samples etched in HF:HNO{sub 3} and in HF:C{sub 2}H{sub 5}OH.
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Effect of different electrolytes on porous GaN using photo-electrochemical etching
International Nuclear Information System (INIS)
Al-Heuseen, K.; Hashim, M.R.; Ali, N.K.
2011-01-01
This article reports the properties and the behavior of GaN during the photoelectrochemical etching process using four different electrolytes. The measurements show that the porosity strongly depends on the electrolyte and highly affects the surface morphology of etched samples, which has been revealed by scanning electron microscopy (SEM) images. Peak intensity of the photoluminescence (PL) spectra of the porous GaN samples was observed to be enhanced and strongly depend on the electrolytes. Among the samples, there is a little difference in the peak position indicating that the change of porosity has little influence on the PL peak shift, while it highly affecting the peak intensity. Raman spectra of porous GaN under four different solution exhibit phonon mode E 2 (high), A 1 (LO), A 1 (TO) and E 2 (low). There was a red shift in E 2 (high) in all samples, indicating a relaxation of stress in the porous GaN surface with respect to the underlying single crystalline epitaxial GaN. Raman and PL intensities were high for samples etched in H 2 SO 4 :H 2 O 2 and KOH followed by the samples etched in HF:HNO 3 and in HF:C 2 H 5 OH.
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Effect of different electrolytes on porous GaN using photo-electrochemical etching
Al-Heuseen, K.; Hashim, M. R.; Ali, N. K.
2011-05-01
This article reports the properties and the behavior of GaN during the photoelectrochemical etching process using four different electrolytes. The measurements show that the porosity strongly depends on the electrolyte and highly affects the surface morphology of etched samples, which has been revealed by scanning electron microscopy (SEM) images. Peak intensity of the photoluminescence (PL) spectra of the porous GaN samples was observed to be enhanced and strongly depend on the electrolytes. Among the samples, there is a little difference in the peak position indicating that the change of porosity has little influence on the PL peak shift, while it highly affecting the peak intensity. Raman spectra of porous GaN under four different solution exhibit phonon mode E 2 (high), A 1 (LO), A 1 (TO) and E 2 (low). There was a red shift in E 2 (high) in all samples, indicating a relaxation of stress in the porous GaN surface with respect to the underlying single crystalline epitaxial GaN. Raman and PL intensities were high for samples etched in H 2SO 4:H 2O 2 and KOH followed by the samples etched in HF:HNO 3 and in HF:C 2H 5OH.
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Effect of Metal Dopant on Ninhydrin—Organic Nonlinear Optical Single Crystals
Directory of Open Access Journals (Sweden)
R. S. Sreenivasan
2013-01-01
Full Text Available In the present work, metal (Cu2+-substituted ninhydrin single crystals were grown by slow evaporation method. The grown crystals have been subjected to single crystal XRD, powder X-ray diffraction, FTIR, dielectric and SHG studies. Single crystal X-ray diffraction analysis reveals that the compound crystallizes in monoclinic system with noncentrosymmetric space group P21 with lattice parameters a=11.28 Å, b=5.98 Å, c=5.71 Å, α=90∘, β=98.57, γ=90∘, and V=381 (Å3, which agrees very well with the reported value. The sharp and strong peaks in the powder X-ray diffraction pattern confirm the good crystallinity of the grown crystals. The presence of dopants marginally altered the lattice parameters without affecting the basic structure of the crystal. The UV-Vis transmittance spectrum shows that the crystal has a good optical transmittance in the entire visible region with lower cutoff wavelength 314 nm. The vibrational frequencies of various functional groups in the crystals have been derived from FT-IR analysis. Based on the shifts in the vibrations, the presence of copper in the lattice of the grown crystal is clearly established from the pure ninhydrin crystals. Both dielectric constant and dielectric loss decrease with the increase in frequency. The second harmonic generation efficiency was measured by employing powder Kurtz method.
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Single Crystal Filters for Neutron Spectrometry
International Nuclear Information System (INIS)
Habib, N.
2008-01-01
A study of neutron transmission properties trough a large single crystals specimens of Si, Ge, Pb, Bi and sapphire at 300 K and 80 K have been made for a wide range of neutron energies. The effectiveness of such filters is given by the ratio of the total cross-section of unwanted epithermal neutrons to that the desired thermal neutron beam and by the optimum choice of the crystal orientation, its mosaic spread, thickness and temperature.Our study indicates that sapphire is significantly more effective than the others for a wide range of neutron energies
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Iron single crystal growth from a lithium-rich melt
Fix, M.; Schumann, H.; Jantz, S. G.; Breitner, F. A.; Leineweber, A.; Jesche, A.
2018-03-01
α -Fe single crystals of rhombic dodecahedral habit were grown from a Li84N12Fe∼3 melt. Crystals of several millimeter along a side form at temperatures around T ≈ 800 ° C. Upon further cooling the growth competes with the formation of Fe-doped Li3N. The b.c.c. structure and good sample quality of α -Fe single crystals were confirmed by X-ray and electron diffraction as well as magnetization measurements and chemical analysis. A nitrogen concentration of 90 ppm was detected by means of carrier gas hot extraction. Scanning electron microscopy did not reveal any sign of iron nitride precipitates.
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Strengthening mechanisms of Fe nanoparticles for single crystal Cu–Fe alloy
International Nuclear Information System (INIS)
Shi, Guodong; Chen, Xiaohua; Jiang, Han; Wang, Zidong; Tang, Hao; Fan, Yongquan
2015-01-01
A single crystal Cu–Fe alloy with finely dispersed precipitate Fe nanoparticles was fabricated in this study. The interface relationship of iron nanoparticle and copper matrix was analyzed with a high-resolution transmission electron microscope (HRTEM), and the effect of Fe nanoparticles on mechanical properties of single crystal Cu–Fe alloy was discussed. Results show that, the finely dispersed Fe nanoparticles can be obtained under the directional solidification condition, with the size of 5–50 nm and the coherent interface between the iron nanoparticle and the copper matrix. Single crystal Cu–Fe alloy possesses improved tensile strength of 194.64 MPa, and total elongation of 44.72%, respectively, at room temperature, in contrast to pure Cu sample. Nanoparticles which have coherent interface with matrix can improve the dislocation motion state. Some dislocations can slip through the nanoparticle along the coherent interface and some dislocations can enter into the nanoparticles. Thus to improve the tensile strength of single crystal Cu–Fe alloy without sacrificing the ductility simultaneously. Based on the above analyses, strengthening mechanisms of Fe nanoparticles for single crystal Cu–Fe alloy was described
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Growth and characterization of Sm3+ doped cerium oxalate single crystals
Directory of Open Access Journals (Sweden)
Minu Mary C
2016-07-01
Full Text Available Single crystals of Sm3+ doped cerium oxalate decahydrate were synthesized using single diffusion gel technique and the conditions influencing the size, morphology, nucleation density and quality of the crystals were optimized. Highly transparent single crystals of average size 3 mm × 2 mm × 1 mm with well-defined hexagonal morphology were grown during a time period of two weeks. X-ray powder diffraction analysis revealed that the grown crystals crystallize in the monoclinic system with space group P21/c as identical with the pure cerium oxalate. The various functional groups of the oxalate ligand and the water of crystallization were identified by Fourier transform infrared spectroscopy. The photoluminescence spectrum of the Sm3+ doped cerium oxalate indicated that the Sm3+ ions are optically active in the cerium oxalate matrix. The crystal has a strong and efficient orange red emission with a wavelength peak at 595 nm and hence can be effectively used for optical amplification. Microhardness measurements of the crystal revealed that they belong to the soft material category.
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Electrolytic coloration and spectral properties of hydroxyl-doped potassium bromide single crystals
International Nuclear Information System (INIS)
Qi, Lan; Song, Cuiying; Gu, Hongen
2013-01-01
Hydroxyl-doped potassium bromide single crystals are colored electrolytically at various temperatures and voltages by using a pointed cathode and a flat anode. The characteristic OH − spectral band is observed in absorption spectrum of uncolored single crystal. The characteristic O − , OH − , U, V 2 , O 2− −V a + , M L1 , F and M spectral bands are observed simultaneously in absorption spectra of colored single crystals. Current–time curve for electrolytic coloration of hydroxyl-doped potassium bromide single crystal and its relationship with electrolytic coloration processes are given. Production and conversion of color centers are explained. - Highlights: ► We expanded the traditional electrolysis method. ► Hydroxyl-doped potassium bromide crystals were colored electrolytically for the first time. ► Useful V, F and F-aggregate color centers were produced in colored crystals. ► V color centers were produced directly and F as well as F-aggregate color centers indirectly.
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Crystal growth and optical properties of Sm:CaNb2O6 single crystal
International Nuclear Information System (INIS)
Di Juqing; Xu Xiaodong; Xia Changtai; Zeng Huidan; Cheng Yan; Li Dongzhen; Zhou Dahua; Wu Feng; Cheng Jimeng; Xu Jun
2012-01-01
Highlights: ► Sm:CaNb 2 O 6 single crystal was grown by the Czochralski method. ► Thermal expansion coefficients and J–O parameters were calculated. ► We found that this crystal had high quantum efficiency of 97%. - Abstract: Sm:CaNb 2 O 6 single crystal has been grown by the Czochralski method. Its high-temperature X-ray powder diffraction, optical absorption, emission spectroscopic as well as lifetime have been studied. Thermal expansion coefficients (α), J–O parameters (Ω i ), radiative lifetime (τ rad ), branching ratios (β) and stimulated emission cross-sections (σ e ) were calculated. The quantum efficiency (η) was calculated to be 97%. The intense peak emission cross section at 610, 658 nm were calculated to be 2.40 × 10 −21 , 2.42 × 10 −21 cm 2 . These results indicate that Sm:CaNb 2 O 6 crystal has potential use in visible laser and photonic devices area.
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Single Crystals of Organolead Halide Perovskites: Growth, Characterization, and Applications
Peng, Wei
2017-04-01
With the soaring advancement of organolead halide perovskite solar cells rising from a power conversion efficiency of merely 3% to more than 22% shortly in five years, researchers’ interests on this big material family have been greatly spurred. So far, both in-depth studies on the fundamental properties of organolead halide perovskites and their extended applications such as photodetectors, light emitting diodes, and lasing have been intensively reported. The great successes have been ascribed to various superior properties of organolead halide hybrid perovskites such as long carrier lifetimes, high carrier mobility, and solution-processable high quality thin films, as will be discussed in Chapter 1. Notably, most of these studies have been limited to their polycrystalline thin films. Single crystals, as a counter form of polycrystals, have no grain boundaries and higher crystallinity, and thus less defects. These characteristics gift single crystals with superior optical, electrical, and mechanical properties, which will be discussed in Chapter 2. For example, organolead halide perovskite single crystals have been reported with much longer carrier lifetimes and higher carrier mobilities, which are especially intriguing for optoelectronic applications. Besides their superior optoelectronic properties, organolead halide perovskites have shown large composition versatility, especially their organic components, which can be controlled to effectively adjust their crystal structures and further fundamental properties. Single crystals are an ideal platform for such composition-structure-property study since a uniform structure with homogeneous compositions and without distraction from grain boundaries as well as excess defects can provide unambiguously information of material properties. As a major part of work of this dissertation, explorative work on the composition-structure-property study of organic-cation-alloyed organolead halide perovskites using their single
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Study of structural and optical properties of YAG and Nd:YAG single crystals
Energy Technology Data Exchange (ETDEWEB)
Kostić, S. [Institute of Physics, University of Belgrade, P.O. Box 68, Pregrevica 118, Zemun, Belgrade (Serbia); Lazarević, Z.Ž., E-mail: lzorica@yahoo.com [Institute of Physics, University of Belgrade, P.O. Box 68, Pregrevica 118, Zemun, Belgrade (Serbia); Radojević, V. [Faculty of Technology and Metallurgy, University of Belgrade, Belgrade (Serbia); Milutinović, A.; Romčević, M.; Romčević, N.Ž. [Institute of Physics, University of Belgrade, P.O. Box 68, Pregrevica 118, Zemun, Belgrade (Serbia); Valčić, A. [Faculty of Technology and Metallurgy, University of Belgrade, Belgrade (Serbia)
2015-03-15
Highlights: • Transparent YAG and pale pink Nd:YAG single crystals were produced by the Czochralski technique. • Growth mechanisms and shape of the liquid/solid interface and incorporation of Nd{sup 3+} were studied. • The structure of the crystals was investigated by X-ray diffraction, Raman and IR spectroscopy. • The 15 Raman and 17 IR modes were observed. • The obtained YAG and Nd:YAG single crystals were without core and of good optical quality. - Abstract: Yttrium aluminum garnet (YAG, Y{sub 3}Al{sub 5}O{sub 12}) and yttrium aluminum garnet doped with neodymium (Nd:YAG) single crystals were grown by the Czochralski technique. The critical diameter and the critical rate of rotation were calculated. Suitable polishing and etching solutions were determined. As a result of our experiments, the transparent YAG and pale pink Nd:YAG single crystals were produced. The obtained crystals were studied by X-ray diffraction, Raman and IR spectroscopy. The crystal structure was confirmed by XRD. The 15 Raman and 17 IR modes were observed. The Raman and IR spectroscopy results are in accordance with X-ray diffraction analysis. The obtained YAG and Nd:YAG single crystals were without core and of good optical quality. The absence of a core was confirmed by viewing polished crystal slices. Also, it is important to emphasize that the obtained Nd:YAG single crystal has a concentration of 0.8 wt.% Nd{sup 3+} that is characteristic for laser materials.
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Directory of Open Access Journals (Sweden)
Chih-Chieh Wang
2017-12-01
Full Text Available A 3D supramolecular network, [Cd(bipy(C4O4(H2O2]·3H2O (1 (bipy = 4,4′-bipyridine and C4O42− = dianion of H2C4O4, constructed by mixed-ligand two-dimensional (2D metal-organic frameworks (MOFs has been reported and structurally determined by the single-crystal X-ray diffraction method and characterized by other physicochemical methods. In 1, the C4O42− and bipy both act as bridging ligands connecting the Cd(II ions to form a 2D layered MOF, which are then extended to a 3D supramolecular network via the mutually parallel and interpenetrating arrangements among the 2D-layered MOFs. Compound 1 shows a two-step dehydration process with weight losses of 11.0% and 7.3%, corresponding to the weight-loss of three guest and two coordinated water molecules, respectively, and exhibits an interesting reversible single-crystal-to-single-crystal (SCSC structural transformation upon de-hydration and re-hydration for guest water molecules. The SCSC structural transformation have been demonstrated and monitored by single-crystal and X-ray powder diffraction, and thermogravimetic analysis studies.
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Lee, Chang-Ju; Won, Chul-Ho; Lee, Jung-Hee; Hahm, Sung-Ho; Park, Hongsik
2017-07-21
The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with complicated buffer layers for a stress-release. It is known that the structure of the buffer layers affects the performance of devices fabricated on the GaN epitaxial layers. In this study, we show that the design of a buffer layer structure can make effect on the UV-to-visible rejection ratio of GaN UV photodetectors. The GaN photodetector fabricated on GaN-on-silicon substrate with a step-graded Al x Ga -x N buffer layer has a highly-selective photoresponse at 365-nm wavelength. The UV-to-visible rejection ratio of the GaN UV photodetector with the step-graded Al x Ga 1-x N buffer layer was an order-of-magnitude higher than that of a photodetector with a conventional GaN/AlN multi buffer layer. The maximum photoresponsivity was as high as 5 × 10 - ² A/W. This result implies that the design of buffer layer is important for photoresponse characteristics of GaN UV photodetectors as well as the crystal quality of the GaN epitaxial layers.
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Mechanism of the superior mechanical strength of nanometer-sized metal single crystals revealed
Afify, N. D.
2013-10-01
Clear understanding of the superior mechanical strength of nanometer-sized metal single crystals is required to derive advanced mechanical components retaining such superiority. Although high quality studies have been reported on nano-crystalline metals, the superiority of small single crystals has neither been fundamentally explained nor quantified to this date. Here we present a molecular dynamics study of aluminum single crystals in the size range from 4.1 nm to 40.5 nm. We show that the ultimate mechanical strength deteriorates exponentially as the single crystal size increases. The small crystals superiority is explained by their ability to continuously form vacancies and to recover them. © 2013 Published by Elsevier B.V.
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Regularities of recrystallization in rolled Zr single crystals
International Nuclear Information System (INIS)
Isaenkova, M; Perlovich, Yu; Fesenko, V; Krymskaya, O; Krapivka, N; Thu, S S
2015-01-01
Experiments by rolled single crystals give a more visible conception of the operating mechanisms of plastic deformation and the following recrystallization, than experiments by polycrystals. Studies by usage of X-ray diffraction methods were conducted by Zr single crystals. It was revealed, that regions of the α-Zr matrix, deformed mainly by twinning, are characterized with decreased tendency to recrystallization. Orientations of recrystallized α-Zr grains correspond to “slopes” of maxima in the rolling texture, where the level of crystalline lattice distortion is maximal and the number of recrystallization nuclei is most of all. (paper)
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The use of single-crystal iron frames in transient field measurements
International Nuclear Information System (INIS)
Zalm, P.C.; Laan, J. van der; Middelkoop, G. van
1979-01-01
Single-crystal Fe frames have been investigated for use as a ferromagnetic backing in transient magnetic field experiments. For this purpose the surface magnetization as a function of applied magnetic field has been determined with the magneto-optical Kerr effect. The frames, which have two sides parallel to the crystal axis, can be fully magnetized at low external fields such that fringing fields are negligibly small. These single-crystal Fe backings have been used in several transient magnetic field experiments. Comparison of the measured precession angles with previous results, obtained in polycrystalline Fe foils at high external magnetic fields, shows that the single-crystal backings are satisfactory. After extended periods of heavy-ion bombardment the crystals exhibited no radiation damage effects. The absence of fringing fields leads to a reduction of a factor of four in the measuring time for transient field experiments. (Auth.)
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Growth features of ammonium hydrogen d-tartrate single crystals
Indian Academy of Sciences (India)
Unknown
Abstract. Ammonium hydrogen d-tartrate (d-AHT) single crystals were grown in silica gel. The growth fea- ... solution (specific gravity, 1⋅04 g/cc) with d-tartaric acid solution having ... resulting in the production of crystal nuclei. The interface.
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Vertical current-flow enhancement via fabrication of GaN nanorod p–n junction diode on graphene
Energy Technology Data Exchange (ETDEWEB)
Ryu, Sung Ryong [Quantum-functional Semiconductor Research Center, Dongguk University-Seoul, 100-715 (Korea, Republic of); Department of physics, Dongguk University, Seoul, 100-715 (Korea, Republic of); Ram, S.D. Gopal; Lee, Seung Joo; Cho, Hak-dong; Lee, Sejoon [Quantum-functional Semiconductor Research Center, Dongguk University-Seoul, 100-715 (Korea, Republic of); Kang, Tae Won, E-mail: twkang@dongguk.edu [Quantum-functional Semiconductor Research Center, Dongguk University-Seoul, 100-715 (Korea, Republic of); Clean Energy and Nano Convergence Centre, Hindustan University, Chennai 600 016 (India); Kwon, Sangwoo; Yang, Woochul [Department of physics, Dongguk University, Seoul, 100-715 (Korea, Republic of); Shin, Sunhye [Soft-Epi Inc., 240 Opo-ro, Opo-eup, Gwangju-si, Gyeonggi-do (Korea, Republic of); Woo, Yongdeuk [Department of Mechanical and Automotive Engineering, Woosuk University, Chonbuk 565-701 (Korea, Republic of)
2015-08-30
Highlights: • Uniaxial p–n junction diode in GaN nanorod is made by Hydride vapor phase epitaxy method. • The p–n junction diode property is clearly observed from the fabricated uniaxial p–n junction nanorod GaN nanorod. • Graphene is used as a current spreading layer to reduce the lateral resistance up to 700 times when compared with the commercial sapphire substrate, which is clearly explained with the aid of an equivalent circuit. • Kelvin Force Probe microscopy method is employed to visualize the p- and n- regions in a single GaN nanorod. - Abstract: Mg doped GaN nanorods were grown on undoped n-type GaN nanorods uniaxial on monolayer graphene by hydride vapor phase epitaxy (HVPE) method. The monolayer graphene used as the bottom electrode and a substrate as well provides good electrical contact, acts as a current spreading layer, well suitable for the growth of hexagonal GaN nanorod. In addition it has a work function suitable to that of n-GaN. The formed p–n nanorods show a Schottky behavior with a turn on voltage of 3 V. Using graphene as the substrate, the resistance of the nanorod is reduced by 700 times when compared with the case without using graphene as the current spreading layer. The low resistance of graphene acts in parallel with the resistance of the GaN buffer layer, and reduces the resistance drastically. The formed p–n junction in a single GaN nanorod is visualized by Kelvin Force Probe Microscopy (KPFM) to have distinctively contrast p and n regions. The measured contact potential difference of p-and n-region has a difference of 103 mV which well confirms the formed regions are electronically different. Low temperature photoluminescence (PL) spectra give evidence of dopant related acceptor bound emission at 3.2 eV different from 3.4 eV of undoped GaN. The crystalline structure, compositional purity is confirmed by X-ray diffraction (XRD), Transmission and Scanning electron microcopies (SEM), (TEM), Energy dispersive analysis
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Vertical current-flow enhancement via fabrication of GaN nanorod p–n junction diode on graphene
International Nuclear Information System (INIS)
Ryu, Sung Ryong; Ram, S.D. Gopal; Lee, Seung Joo; Cho, Hak-dong; Lee, Sejoon; Kang, Tae Won; Kwon, Sangwoo; Yang, Woochul; Shin, Sunhye; Woo, Yongdeuk
2015-01-01
Highlights: • Uniaxial p–n junction diode in GaN nanorod is made by Hydride vapor phase epitaxy method. • The p–n junction diode property is clearly observed from the fabricated uniaxial p–n junction nanorod GaN nanorod. • Graphene is used as a current spreading layer to reduce the lateral resistance up to 700 times when compared with the commercial sapphire substrate, which is clearly explained with the aid of an equivalent circuit. • Kelvin Force Probe microscopy method is employed to visualize the p- and n- regions in a single GaN nanorod. - Abstract: Mg doped GaN nanorods were grown on undoped n-type GaN nanorods uniaxial on monolayer graphene by hydride vapor phase epitaxy (HVPE) method. The monolayer graphene used as the bottom electrode and a substrate as well provides good electrical contact, acts as a current spreading layer, well suitable for the growth of hexagonal GaN nanorod. In addition it has a work function suitable to that of n-GaN. The formed p–n nanorods show a Schottky behavior with a turn on voltage of 3 V. Using graphene as the substrate, the resistance of the nanorod is reduced by 700 times when compared with the case without using graphene as the current spreading layer. The low resistance of graphene acts in parallel with the resistance of the GaN buffer layer, and reduces the resistance drastically. The formed p–n junction in a single GaN nanorod is visualized by Kelvin Force Probe Microscopy (KPFM) to have distinctively contrast p and n regions. The measured contact potential difference of p-and n-region has a difference of 103 mV which well confirms the formed regions are electronically different. Low temperature photoluminescence (PL) spectra give evidence of dopant related acceptor bound emission at 3.2 eV different from 3.4 eV of undoped GaN. The crystalline structure, compositional purity is confirmed by X-ray diffraction (XRD), Transmission and Scanning electron microcopies (SEM), (TEM), Energy dispersive analysis
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The crystal structure and twinning of neodymium gallium perovskite single crystals
International Nuclear Information System (INIS)
Ubizskii, S.B.; Vasylechko, L.O.; Savytskii, D.I.; Matkovskii, A.O.; Syvorotka, I.M.
1994-01-01
By means of X-ray structure analysis, the crystal structure of neodymium gallium perovskite (NGP) single crystals (NdGaO 3 ) being used as a substrate for HTSC film epitaxy has been refined and the position of atoms has been determined. The possibility of YBa 2 Cu 3 O 7-x film epitaxy on the plane (110) of NGP crystal as well as its advantages and pitfalls are analysed from structural data. The twinning types in the NGP crystal were established. The twinning structure of NGP substrates is found to be stable up to a temperature of 1173 K, as differentiated from the LaGaO 3 and LaAlO 3 substrates. It is intimated that the twinning in the NGP substrates oriented as (001) can result in creation of 90 degrees twin bonds in a film, and in the case of (110)-oriented plates it is possible to ignore the twinning presence in substrate completely. (author)
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Types of defect ordering in undoped and lanthanum-doped Bi2201 single crystals
International Nuclear Information System (INIS)
Martovitsky, V. P.
2006-01-01
Undoped and lanthanum-doped Bi2201 single crystals having a perfect average structure have been comparatively studied by x-ray diffraction. The undoped Bi2201 single crystals exhibit very narrow satellite reflections; their half-width is five to six times smaller than that of Bi2212 single crystals grown by the same technique. This narrowness indicates three-dimensional defect ordering in the former crystals. The lanthanumdoped Bi2201 single crystals with x = 0.7 and T c = 8-10 K exhibit very broad satellite reflections consisting of two systems (modulations) misoriented with respect to each other. The modulation-vector components of these two modulations are found to be q 1 = 0.237b* + 0.277c* and q 2 = 0.238b* + 0.037c*. The single crystals having a perfect average structure and a homogeneous average distribution of doping lanthanum consist of 70-to 80-A-thick layers that alternate along the c axis and have two different types of modulated superlattice. The crystals having a less perfect average structure also consist of alternating layers, but they have different lanthanum concentrations. The low value of T c in the undoped Bi2201 single crystals (9.5 K) correlates with three-dimensional defect ordering in them, and an increase in T c to 33 K upon lanthanum doping can be related to a thin-layer structure of these crystals and to partial substitution of lanthanum for the bismuth positions
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Disappearing Enantiomorphs: Single Handedness in Racemate Crystals.
Parschau, Manfred; Ernst, Karl-Heinz
2015-11-23
Although crystallization is the most important method for the separation of enantiomers of chiral molecules in the chemical industry, the chiral recognition involved in this process is poorly understood at the molecular level. We report on the initial steps in the formation of layered racemate crystals from a racemic mixture, as observed by STM at submolecular resolution. Grown on a copper single-crystal surface, the chiral hydrocarbon heptahelicene formed chiral racemic lattice structures within the first layer. In the second layer, enantiomerically pure domains were observed, underneath which the first layer contained exclusively the other enantiomer. Hence, the system changed from a 2D racemate into a 3D racemate with enantiomerically pure layers after exceeding monolayer-saturation coverage. A chiral bias in form of a small enantiomeric excess suppressed the crystallization of one double-layer enantiomorph so that the pure minor enantiomer crystallized only in the second layer. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Czech Academy of Sciences Publication Activity Database
Molnar, P.; Šittner, P.; Novák, V.; Lukáš, Petr
2008-01-01
Roč. 481, Sp.Iss.SI (2008), s. 513-517 ISSN 0921-5093 R&D Projects: GA AV ČR IAA100480704 Institutional research plan: CEZ:AV0Z10480505 Keywords : Cu-Al-Ni * single crystals * neutron diffraction Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.806, year: 2008
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Electronic transport properties of single crystal thallium-2201 superconductors
International Nuclear Information System (INIS)
Yandrofski, R.M.
1992-01-01
Four-probe resistance measurements on single crystals of the calcium-free thallium-based superconducting Tl 2 Ba 2 CuO 6+σ phase (Tl-2201) were performed in magnetic fields up to 12 Telsa. Single crystals of sizes were grown by a self-flux technique and were characterized by single crystal X-ray diffraction and X-ray Dispersive Analysis. Field measurements were taken at dc and at low frequencies using a lock-in technique. Techniques were developed to oxygen-anneal the as-grown single crystals to generate single crystal samples of the same Tl-2201 phase with varying transition interaction effect against appropriate composite general alternatives are developed for the standard two-way layout with a single observation per cell. Nonparametric aligned-rank test procedures are introduced. One of the new procedures is shown to be equivalent to a slight modification of the previously studied Latin square procedures when the factors have the same number of levels. The equal in distribution technique is used to show that any statistic based on the joint ranks should not be used to test the hypotheses of interest. The tests based on aligning with the averages do not depend on the nuisance main effects, while those based on aligning with the median do depend on the nuisance main effects. The relative power performance of the competing tests are examined via Monte Carlo simulation. Power studies conducted on the 5 x 5, 5 x 6, and 5 x 9 two-way layouts with one observation per cell show that the new procedures based on a comparison of all possible pairs of rank-profiles perform quite well for two types of product interaction, a general class of interaction effects proposed by Martin, and several sets of specific interaction effects. Approximate critical values for some of the proposed procedures are explored in the special case when the main effect parameters for one factor are known
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BiI{sub 3} single crystal for room-temperature gamma ray detectors
Energy Technology Data Exchange (ETDEWEB)
Saito, T., E-mail: saito.tatsuya125@canon.co.jp [Frontier Research Center, Canon Inc., 3-30-2, Shimomaruko, Ohta-ku, Tokyo 146-8501 (Japan); Iwasaki, T. [Frontier Research Center, Canon Inc., 3-30-2, Shimomaruko, Ohta-ku, Tokyo 146-8501 (Japan); Kurosawa, S.; Yoshikawa, A. [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan); Den, T. [Frontier Research Center, Canon Inc., 3-30-2, Shimomaruko, Ohta-ku, Tokyo 146-8501 (Japan)
2016-01-11
BiI{sub 3} single crystals were grown by the physical vapor transport method. The repeated sublimation of the starting material reduced impurities in the BiI{sub 3} single crystal to sub-ppm levels. The detector was fabricated by depositing Au electrodes on both surfaces of the 100-μm-thick BiI{sub 3} single crystal platelet. The resistivity of the BiI{sub 3} single crystal was increased by post-annealing in an iodine atmosphere (ρ=1.6×10{sup 11} Ω cm). Pulse height spectroscopy measurements showed clear peaks in the energy spectrum of alpha particles or gamma rays. It was estimated that the mobility-lifetime product was μ{sub e}τ{sub e}=3.4–8.5×10{sup −6} cm{sup 2}/V and the electron–hole pair creation energy was 5.8 eV. Our results show that BiI{sub 3} single crystals are promising candidates for detectors used in radiographic imaging or gamma ray spectroscopy.
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Bloch walls in a nickel single crystal
International Nuclear Information System (INIS)
Peters, J.; Treimer, W.
2001-01-01
We present a consistent theory for the dependence of the magnetic structure in bulk samples on external static magnetic fields and corresponding experimental results. We applied the theory of micromagnetism to this crystal and calculated the Bloch wall thickness as a function of external magnetic fields. The theoretical results agree well with the experimental data, so that the Bloch wall thickness of a 71 deg. nickel single crystal was definitely determined with some hundred of nanometer
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Thermopower, electrical and Hall conductivity of undoped and doped iron disilicide single crystals
Energy Technology Data Exchange (ETDEWEB)
Heinrich, A; Behr, G; Griessmann, H; Teichert, S; Lange, H
1997-07-01
The electrical transport properties of {beta}-FeSi{sub 2} single crystals have been investigated in dependence on the purity of the source material and on doping with 3d transition metals. The transport properties included are electrical conductivity, Hall conductivity and thermopower mainly in the temperature range from 4K to 300K. The single crystals have been prepared by chemical transport reaction in a closed system with iodine as transport agent. In undoped single crystals prepared with 5N Fe both electrical conductivity and thermopower depend on the composition within the homogeneity range of {beta}-FeSi{sub 2} which is explained by different intrinsic defects at the Si-rich and Fe-rich phase boundaries. In both undoped and doped single crystals impurity band conduction is observed at low temperatures but above 100K extrinsic behavior determined by shallow impurity states. The thermopower shows between 100K and 200K a significant phonon drag contribution which depends on intrinsic defects and additional doping. The Hall resistivity is considered mainly with respect to an anomalous contribution found in p-type and n-type single crystals and thin films. In addition doped single crystals show at temperatures below about 130K an hysteresis of the Hall voltage. These results make former mobility data uncertain. Comparison will be made between the transport properties of single crystals and polycrystalline material.
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Growth and characterization of isotopically enriched 70Ge and 74Ge single crystals
International Nuclear Information System (INIS)
Itoh, K.
1992-10-01
Isotopically enriched 70 Ge and 74 Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm 3 volume. To our knowledge, we have grown the first 70 Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be ∼2 x cm -3 which is two order of magnitude better that of 74 Ge crystals previously grown by two different groups. Isotopic enrichment of the 70 Ge and the 74 Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed
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Self-cavity lasing in optically pumped single crystals of p-sexiphenyl
International Nuclear Information System (INIS)
Yanagi, Hisao; Tamura, Kenji; Sasaki, Fumio
2016-01-01
Organic single-crystal self-cavities are prepared by solution growth of p-sexiphenyl (p-6P). Based on Fabry-Pérot feedback inside a quasi-lozenge-shaped platelet crystal, edge-emitting laser is obtained under optical pumping. The multimode lasing band appears at the 0-1 or 0-2 vibronic progressions depending on the excitation conditions which affect the self-absorption effect. Cavity-size dependence of amplified spontaneous emission (ASE) is investigated with laser-etched single crystals of p-6P. As the cavity length of square-shaped crystal is reduced from 100 to 10 μm, ASE threshold fluence is decreased probably due to size-dependent light confinement in the crystal cavity.
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Ferromagnetism in CVT grown tungsten diselenide single crystals with nickel doping
Habib, Muhammad; Muhammad, Zahir; Khan, Rashid; Wu, Chuanqiang; Rehman, Zia ur; Zhou, Yu; Liu, Hengjie; Song, Li
2018-03-01
Two dimensional (2D) single crystal layered transition materials have had extensive consideration owing to their interesting magnetic properties, originating from their lattices and strong spin-orbit coupling, which make them of vital importance for spintronic applications. Herein, we present synthesis of a highly crystalline tungsten diselenide layered single crystal grown by chemical vapor transport technique and doped with nickel (Ni) to tailor its magnetic properties. The pristine WSe2 single crystal and Ni-doped crystal were characterized and analyzed for magnetic properties using both experimental and computational aspects. It was found that the magnetic behavior of the 2D layered WSe2 crystal changed from diamagnetic to ferromagnetic after Ni-doping at all tested temperatures. Moreover, first principle density functional theory (DFT) calculations further confirmed the origin of room temperature ferromagnetism of Ni-doped WSe2, where the d-orbitals of the doped Ni atom promoted the spin moment and thus largely contributed to the magnetism change in the 2D layered material.
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Self-Aligned Growth of Organic Semiconductor Single Crystals by Electric Field.
Kotsuki, Kenji; Obata, Seiji; Saiki, Koichiro
2016-01-19
We proposed a novel but facile method for growing organic semiconductor single-crystals via solvent vapor annealing (SVA) under electric field. In the conventional SVA growth process, nuclei of crystals appeared anywhere on the substrate and their crystallographic axes were randomly distributed. We applied electric field during the SVA growth of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) on the SiO2/Si substrate on which a pair of electrodes had been deposited beforehand. Real-time observation of the SVA process revealed that rodlike single crystals grew with their long axes parallel to the electric field and bridged the prepatterned electrodes. As a result, C8-BTBT crystals automatically formed a field effect transistor (FET) structure and the mobility reached 1.9 cm(2)/(V s). Electric-field-assisted SVA proved a promising method for constructing high-mobility single-crystal FETs at the desired position by a low-cost solution process.
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Directory of Open Access Journals (Sweden)
Chang-Ju Lee
2017-07-01
Full Text Available The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with complicated buffer layers for a stress-release. It is known that the structure of the buffer layers affects the performance of devices fabricated on the GaN epitaxial layers. In this study, we show that the design of a buffer layer structure can make effect on the UV-to-visible rejection ratio of GaN UV photodetectors. The GaN photodetector fabricated on GaN-on-silicon substrate with a step-graded AlxGa−xN buffer layer has a highly-selective photoresponse at 365-nm wavelength. The UV-to-visible rejection ratio of the GaN UV photodetector with the step-graded AlxGa1−xN buffer layer was an order-of-magnitude higher than that of a photodetector with a conventional GaN/AlN multi buffer layer. The maximum photoresponsivity was as high as 5 × 10−2 A/W. This result implies that the design of buffer layer is important for photoresponse characteristics of GaN UV photodetectors as well as the crystal quality of the GaN epitaxial layers.
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Single Crystals of Organolead Halide Perovskites: Growth, Characterization, and Applications
Peng, Wei
2017-01-01
Despite their outstanding charge transport characteristics, organolead halide perovskite single crystals grown by hitherto reported crystallization methods are not suitable for most optoelectronic devices due to their small aspect ratios
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Energy Technology Data Exchange (ETDEWEB)
Ulbrich, Gregor
2015-07-23
In this work it could be shown that Skull-Melting is a suitable method for growing ceria single crystals. Twenty different ceria-based single crystals could be manufactured. It was possible to dope ceria single crystals with Gd, Sm, Y, Zr, Ti, Ta, and Pr in different concentrations. Also co-doping with the named metals was realized. However, there remain some problems for growing ceria-based single crystals by Skull-Melting. As ignition metal zirconium was used because no ceria-based material works well. For that reason all single crystals show small zirconium contamination. Another problem is the formation of oxygen by the heat-induced reduction of ceria during the melting process. Because of that the skull of sintered material is often destroyed by gas pressure. This problem had to be solved individually for every single crystal. The obtained single crystals were characterized using different methods. To ensure the single crystal character the y were examined by Laue diffraction. All manufactured crystals are single crystals. Also powder diffraction patterns of the milled and oxidized samples were measured. For the determination of symmetry and metric the structural parameters were analyzed by the Rietveld method. All synthesized materials crystallize in space group Fm-3m known from calcium fluoride. The cubic lattice parameter a was determined for all crystals. In the case of series with different cerium and zirconium concentrations a linear correlation between cerium content and cubic lattice parameter was detected. The elemental composition was determined by WDX. All crystals show a homogeneous elemental distribution. The oxygen content was calculated because the WDX method isn't useful for determination.
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Growth and characterization of air annealing Mn-doped YAG:Ce single crystal for LED
International Nuclear Information System (INIS)
Xiang, Weidong; Zhong, Jiasong; Zhao, Yinsheng; Zhao, Binyu; Liang, Xiaojuan; Dong, Yongjun; Zhang, Zhimin; Chen, Zhaoping; Liu, Bingfeng
2012-01-01
Highlights: ► The YAG:Ce,Mn single crystal was well synthesized by the Czochralski (CZ) method. ► The emission intensity of the sample has been influenced after annealing. ► Annealed in the air at 1200 °C was the most optimal annealing condition. ► The single crystal could be used in the white light LED which emitted by blue light. - Abstract: The growth of Mn-doped YAG:Ce (yttrium aluminum garnet doped cerium) single crystal by the Czochralski (CZ) method and the characterization of its spectroscopy and color-electric parameters are presented. The absorption spectra indicate that the crystal absorbed highly in the 300–500 nm wavelength range. The emission spectrum of the crystal consists of a peak around 538 nm when excited by 460 nm blue light, which prove the YAG:Ce,Mn single crystal could be used in the white light emitting doides (LED). The different charges of Mn ions have different luminescence properties, and the air annealing process for the single crystal would change the concentration of Mn ions with different charges, which could influence the emission intensity of the single crystal.
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Electronic structures and optical properties of GaN nanotubes with MgGa–ON co-doping
International Nuclear Information System (INIS)
Yang, Mao; Shi, Jun-jie; Zhang, Min; Zhang, Shuai; Bao, Zhi-qiang; Luo, Shao-jun; Zhou, Tie-Cheng; Zhu, Tian-cong; Li, Xiang; Li, Jia
2013-01-01
Both the electronic structures and the optical properties of single-walled zigzag GaN nanotubes (NTs) with Mg Ga –O N co-doping are investigated using first-principles calculations. We find that the Mg Ga –O N defect complex can exist stably in GaN NTs. The direct band gap width of the GaN NTs can be reduced by means of the Mg Ga –O N co-doping. The electrons of the valence band maximum (VBM) state are localized around the N atoms bonded with the Mg atom. The imaginary part ε 2 of the complex dielectric function of GaN NTs with Mg Ga –O N co-doping has a sharp peak closely related to the optical transitions between the VBM and conduction band minimum states. - Highlights: ► The Mg Ga –O N defect complex can exist stably in GaN NTs. ► The band gap of the GaN NTs can be reduced due to the Mg Ga –O N co-doping. ► The VBM states are localized around the N atoms bonded with the Mg atom. ► The ε 2 -plot has a peak related to the optical transition from the VBM to CBM state
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Growth of methyl 2-(2,4-dinitrophenyl)aminopropanoate single crystals
Perigaud, A.; Nicolau, Y. F.
1986-12-01
Methyl 2-(2,4-dinitrophenyl)aminopropanoate single crystals, 1 cm in diameter and 7 cm in length have been grown by a travelling-heater-Bridgman method in polyethylene tubes introduced into glass ampoules, at a growth rate of 1.5-6 mm/day. The starting material was synthesised and purified by recrystallization from methanol and by vacuum evaporation to a purity of 99.994%. The period of growth, and hence the length of the crystal, is limited due to melt decomposition and polycondensation. The b-axis of the crystals is always oriented at about 72° to the ampoule axis. Good quality single crystals have been obtained giving a FWHM of the Cu Kα (040) rocking curve of about 1'.
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Annealing effect on superconductivity of La2CuO4 single crystals
International Nuclear Information System (INIS)
Tanaka, I.; Takahashi, H.; Kojima, H.
1992-01-01
This paper reports that La 2 CuO 4 single crystals grown at an oxygen pressure of 0.2 MPa by TSFZ method are superconducting below 32 K, and show a semiconducting behavior in nonsuperconducting state. The single crystals of La 2 CuO 4 are changed from superconductors to semiconductors by annealing in argon, and are returned to superconductors by annealing at ambient pressure of oxygen. Therefore, superconductivity of the La 2 CuO 4 single crystals is due to excess oxygen
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Annealing effect on superconductivity of La2CuO4 single crystals
International Nuclear Information System (INIS)
Tanaka, L.; Takahashi, H.; Kojima, H.
1992-01-01
La 2 CuO 4 single crystals grown at an oxygen pressure of 0.2 MPa by TSFZ method are superconducting below 32 K, and show a semiconducting behavior in nonsuperconducting state. The single crystals of La 2 CuO 4 are changed from superconductors to semiconductors by annealing in argon, and are returned to superconductors by annealing at ambient pressure of oxygen. Therefore, superconductivity of the La 2 CuO 4 single crystals is due to excess oxygen. (orig.)
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International Nuclear Information System (INIS)
Ristic, J.; Calleja, E.; Sanchez-Garcia, M.A.; Ulloa, J.M.; Sanchez-Paramo, J.; Calleja, J.M.; Jahn, U.; Trampert, A.; Ploog, K.H.
2003-01-01
GaN quantum discs embedded in AlGaN nanocolumns with outstanding crystal quality and very high luminescence efficiency were grown on Si(111) substrates by plasma-assisted molecular beam epitaxy under highly N-rich conditions. Nanocolumns with diameters in the range of 30-150 nm, with no traces of any extended defects, as confirmed by transmission electron microscopy, were obtained. GaN quantum discs, 2 and 4 nm thick, were grown embedded in AlGaN nanocolumns by switching on and off the Al flux during variable time spans. Strong optical emissions from GaN quantum discs, observed by photoluminescence and cathodoluminescence measurements, reveal quantum confinement effects. While Raman data indicate that the nanocolumns are fully relaxed, the quantum discs appear to be fully strained. These nanostructures have a high potential for application in efficient vertical cavity emitters
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Hopping conduction in gamma-irradiated InSe and InSe:Sn single crystals
International Nuclear Information System (INIS)
MUSTAFAEVA, S.N.; ISMAILOV, A.A.; ASADOV, M.M.
2010-01-01
Full text : The semiconductive InSe layer compound is characterized by a strong covalent bond inside the layers and a weak Van der Waals bonding between them. It was shown that across the layers of InSe single crystals at low temperatures (T ≤ 200 K) at direct current (dc) hopping conduction through localized states near the Fermi level takes place. The results of dc-conductivity of gamma-irradiated p-InSe and n-InSe : Sn layer single crystals have been presented in this work. ρ-InSe single crystal specimens grown by the Bridgman method were used in the experiments. Plates of the crystals under study were obtained by cleaving along the layers of single crystal ingots. The single-crystal InSe samples for electric measurements had the form of planar capacitors normal to the C axis of the crystals, with silver-paste electrodes. The thickness of the InSe samples was 300 mkm. Co 60 serves as the source of irradiation with energy of gamma-quantum equal to 1.3 MeV. The electric properties of non-irradiated and gamma-irradiated InSe crystals were measured under the same conditions. It is revealed that InSe and InSe : Sn (0.2 and 0.4 mole percent Sn) single crystals exhibit a variable range hopping conduction along a normal to their natural layers at temperatures T≤200 K in a dc electric field. From experimental data the parameters of localized states of p-InSe and n-InSe : Sn were calculated before and after gamma-irradiation. It is revealed that gamma-irradiation of p-InSe and n-InSe : Sn (0.2 and 0.4 mole percent Sn) single crystals leads to significant change of localized states parameters. After gamma-irradiation the density of states near the Fermi level increased, but their energy spread and the average jump distance decreased. The concentrations of radiated defects were estimated in p-InSe (5.18*10 1 7 sm - 3) and n-InSe : Sn (2.5*10 1 7 - 2.7*10 1 8 sm - 3) single crystals. The present results demonstrate that gamma-irradiation offers the possibility of tuning
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From Stable ZnO and GaN Clusters to Novel Double Bubbles and Frameworks
Directory of Open Access Journals (Sweden)
Matthew R. Farrow
2014-05-01
Full Text Available A bottom up approach is employed in the design of novel materials: first, gas-phase “double bubble” clusters are constructed from high symmetry, Th, 24 and 96 atom, single bubbles of ZnO and GaN. These are used to construct bulk frameworks. Upon geometry optimization—minimisation of energies and forces computed using density functional theory—the symmetry of the double bubble clusters is reduced to either C1 or C2, and the average bond lengths for the outer bubbles are 1.9 Å, whereas the average bonds for the inner bubble are larger for ZnO than for GaN; 2.0 Å and 1.9 Å, respectively. A careful analysis of the bond distributions reveals that the inter-bubble bonds are bi-modal, and that there is a greater distortion for ZnO. Similar bond distributions are found for the corresponding frameworks. The distortion of the ZnO double bubble is found to be related to the increased flexibility of the outer bubble when composed of ZnO rather than GaN, which is reflected in their bulk moduli. The energetics suggest that (ZnO12@(GaN48 is more stable both in gas phase and bulk frameworks than (ZnO12@(ZnO48 and (GaN12@(GaN48. Formation enthalpies are similar to those found for carbon fullerenes.
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Radiation sensors based on GaN microwires
Verheij, D.; Peres, M.; Cardoso, S.; Alves, L. C.; Alves, E.; Durand, C.; Eymery, J.; Lorenz, K.
2018-05-01
GaN microwires were shown to possess promising characteristics as building blocks for radiation resistant particle detectors. They were grown by metal organic vapour phase epitaxy with diameters between 1 and 2 μm and lengths around 20 μm. Devices were fabricated by depositing gold contacts at the extremities of the wires using photolithography. The response of these single wire radiation sensors was then studied under irradiation with 2 MeV protons. Severe degradation of the majority of devices only sets in for fluences above protons cm‑2 revealing good radiation resistance. During proton irradiation, a clear albeit small current gain was observed with a corresponding decay time below 1 s. Photoconductivity measurements upon irradiation with UV light were carried out before and after the proton irradiation. Despite a relatively low gain, attributed to significant dark currents caused by a high dopant concentration, fast response times of a few seconds were achieved comparable to state-of-the-art GaN nanowire photodetectors. Irradiation and subsequent annealing resulted in an overall improvement of the devices regarding their response to UV radiation. The photocurrent gain increased compared to the values that were obtained prior to the irradiation, without compromising the decay times. The results indicate the possibility of using GaN microwires not only as UV detectors, but also as particle detectors.
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Trapezoidal diffraction grating beam splitters in single crystal diamond
Kiss, Marcell; Graziosi, Teodoro; Quack, Niels
2018-02-01
Single Crystal Diamond has been recognized as a prime material for optical components in high power applications due to low absorption and high thermal conductivity. However, diamond microstructuring remains challenging. Here, we report on the fabrication and characterization of optical diffraction gratings exhibiting a symmetric trapezoidal profile etched into a single crystal diamond substrate. The optimized grating geometry diffracts the transmitted optical power into precisely defined proportions, performing as an effective beam splitter. We fabricate our gratings in commercially available single crystal CVD diamond plates (2.6mm x 2.6mm x 0.3mm). Using a sputter deposited hard mask and patterning by contact lithography, the diamond is etched in an inductively coupled oxygen plasma with zero platen power. The etch process effectively reveals the characteristic {111} diamond crystal planes, creating a precisely defined angled (54.7°) profile. SEM and AFM measurements of the fabricated gratings evidence the trapezoidal shape with a pitch of 3.82μm, depth of 170 nm and duty cycle of 35.5%. Optical characterization is performed in transmission using a 650nm laser source perpendicular to the sample. The recorded transmitted optical power as function of detector rotation angle shows a distribution of 21.1% in the 0th order and 23.6% in each +/-1st order (16.1% reflected, 16.6% in higher orders). To our knowledge, this is the first demonstration of diffraction gratings with trapezoidal profile in single crystal diamond. The fabrication process will enable beam splitter gratings of custom defined optical power distribution profiles, while antireflection coatings can increase the efficiency.
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Growth and characterization of semi-polar (11-22) GaN on patterned (113) Si substrates
International Nuclear Information System (INIS)
Bai, J; Yu, X; Gong, Y; Hou, Y N; Zhang, Y; Wang, T
2015-01-01
Patterned (113) Si substrates have been fabricated for the growth of (11-22) semi-polar GaN, which completely eliminates one of the great issues in the growth of semi-polar GaN on silicon substrates, ‘Ga melting-back’. Furthermore, unlike any other mask patterning approaches which normally lead to parallel grooves along a particular orientation, our approach is to form periodic square window patterns. As a result, crack-free semi-polar (11-22) GaN with a significant improvement in crystal quality has been achieved, in particular, basal stacking faults (BSFs) have been significantly reduced. The mechanism for the defect suppression has been investigated based on detailed transmission electron microscopy measurements. It has been found that the BSFs can be impeded effectively at an early growth stage due to the priority growth along the 〈0001〉 direction. The additional 〈1-100〉 lateral growth above the masks results in a further reduction in dislocation density. The significant reduction in BSFs has been confirmed by low temperature photoluminescence measurements. (paper)
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GaN Micromechanical Resonators with Meshed Metal Bottom Electrode.
Ansari, Azadeh; Liu, Che-Yu; Lin, Chien-Chung; Kuo, Hao-Chung; Ku, Pei-Cheng; Rais-Zadeh, Mina
2015-03-17
This work describes a novel architecture to realize high-performance gallium nitride (GaN) bulk acoustic wave (BAW) resonators. The method is based on the growth of a thick GaN layer on a metal electrode grid. The fabrication process starts with the growth of a thin GaN buffer layer on a Si (111) substrate. The GaN buffer layer is patterned and trenches are made and refilled with sputtered tungsten (W)/silicon dioxide (SiO₂) forming passivated metal electrode grids. GaN is then regrown, nucleating from the exposed GaN seed layer and coalescing to form a thick GaN device layer. A metal electrode can be deposited and patterned on top of the GaN layer. This method enables vertical piezoelectric actuation of the GaN layer using its largest piezoelectric coefficient ( d 33 ) for thickness-mode resonance. Having a bottom electrode also results in a higher coupling coefficient, useful for the implementation of acoustic filters. Growth of GaN on Si enables releasing the device from the frontside using isotropic xenon difluoride (XeF₂) etch and therefore eliminating the need for backside lithography and etching.
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Young's Modulus of Single-Crystal Fullerene C Nanotubes
Directory of Open Access Journals (Sweden)
Tokushi Kizuka
2012-01-01
Full Text Available We performed bending tests on single-crystal nanotubes composed of fullerene C70 molecules by in situ transmission electron microscopy with measurements of loading forces by an optical deflection method. The nanotubes with the outer diameters of 270–470 nm were bent using simple-beam and cantilever-beam loading by the piezomanipulation of silicon nanotips. Young's modulus of the nanotubes increased from 61 GPa to 110 GPa as the outer diameter decreased from 470 nm to 270 nm. Young's modulus was estimated to be 66% of that of single-crystal C60 nanotubes of the same outer diameter.
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Growth and characterization of 2-Methylimidazolium D-tartrate single crystal
Srinivasan, T. P.; Anandhi, S.; Gopalakrishnan, R.
2011-03-01
Single crystal of 2-Methylimidazolium D-tartrate (2MImdT; C8N2O6H12) has been grown by slow evaporation solution growth technique at room temperature using mixed solvents of ethanol and deionized water. Single crystal X-ray diffraction study confirms that 2-Methylimidazolium D-tartrate belongs to monoclinic crystal system with non-centrosymmetric space group P21. The Fourier transform infrared spectrum of 2-Methylimidazolium D-tartrate reveals the presence of methyl and carboxyl functional groups in the compound. The mechanical properties of 2MImdT crystal were studied. The theoretical factor group analysis predicts 168 optical modes in the title compound. The dielectric behavior of 2MImdT crystals was studied at different frequencies and temperatures. Decomposition and melting point of 2MImdT were found using thermal measurements. SHG behavior of the title compound was demonstrated using Q-switched Nd:YAG laser.
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Priyadharshini, A.; Kalainathan, S.
2018-04-01
2-(4-fluorobenzylidene) malononitrile (FBM), an organic third order nonlinear (TONLO) single crystal with the dimensions of 32 × 7 × 11 mm3, has been successfully grown in acetone solution by slow evaporation technique at 35 °C. The crystal system (triclinic), space group (P-1) and crystalline purity of the titular crystal were measured by single crystal and powder X-ray diffraction, respectively. The molecular weight and the multiple functional groups of the FBM material were confirmed through the mass and FT-IR spectral analysis. UV-Vis-NIR spectral study enroles that the FBM crystal exhibits excellent transparency (83%) in the entire visible and near infra-red region with a wide bandgap 2.90 eV. The low dielectric constant (εr) value of FBM crystal is appreciable for microelectronics industry applications. Thermal stability and melting point (130.09 °C) were ascertained by TGA-DSC analysis. The laser-induced surface damage threshold (LDT) value of FBM specimen is found to be 2.14 GW/cm2, it is fairly good compared to other reported NLO crystals. The third - order nonlinear optical character of the FBM crystal was confirmed through the typical single beam Z-scan technique. All these finding authorized that the organic crystal of FBM is favorably suitable for NLO applications.
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Annealing effect of H+ -implanted single crystal silicon on strain and crystal structure
International Nuclear Information System (INIS)
Duo Xinzhong; Liu Weili; Zhang Miao; Gao Jianxia; Fu Xiaorong; Lin Chenglu
2000-01-01
The work focuses on the rocking curves of H + -implanted single silicon crystal detected by Four-Crystal X-ray diffractometer. The samples were annealed under different temperatures. Lattice defect in H + -implanted silicon crystals was detected by Rutherford Backscattering Spectrometry. It appeared that H-related complex did not crush until annealing temperature reached about 400 degree C. At that temperature H 2 was formed, deflated in silicon lattice and strained the lattice. But defects did not come into being in large quantity. The lattice was undamaged. When annealing temperature reached 500 degree C, strain induced by H 2 deflation crashed the silicon lattice. A large number of defects were formed. At the same time bubbles in the crystal and blister/flaking on the surface could be observed
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Gan-Hang tectonic belt and its geologic significance
International Nuclear Information System (INIS)
Deng Jiarui; Zhang Zhiping.
1989-01-01
Gan-Hang tectonic belt is predominantly controlled by Gan-Hang fracture zone. It is mainly composed of Yongfeng-Zhuji downwarping zone, Gan-Hang volcanic activity structural belt and Gan-Hang red basin downfaulted zone. Gan-Hang fracture zone is derived from evolution and development of Shaoxing-Jiangshan deep fracture. It is mainly composed of three deep and large fracture and Fuzhou-Yongfeng large fracture. The fracture zone is a long active belt, but in each active period the geologic structural patterns intensity, depth and forming time were not same. Gan-Hang tectonic belt possesses obvious inheritance. It has always maintained the character of the relative depression or low land since the Caledonian movement. This specific structural environment is favourable for uranium mineralization. At any rate, the formation of this uranium minerogenetic zone has been experiencing a long and complicated processes which were closely associated with long activity of Gan-Hang fracture zone
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Karthigha, S.; Krishnamoorthi, C.
2018-03-01
An organic quinolinium derivative nonlinear optical (NLO) crystal, 1-ethyl-2-[2-(4-nitro-phenyl)-vinyl]-quinolinium iodide (PNQI) was synthesized and successfully grown by slow evaporation solution growth technique. Formation of a crystalline compound was confirmed by single crystal X-ray diffraction. The quinolinium compound PNQI crystallizes in the triclinic crystal system with a centrosymmetric space group of P-1 symmetry. The molecular structure of PNQI was confirmed by 1H NMR and 13C NMR spectral studies. The thermal properties of the crystal have been investigated by thermogravimetric (TG) and differential scanning calorimetry (DSC) studies. The optical characteristics obtained from UV-Vis-NIR spectral data were described and the cut-off wavelength observed at 506 nm. The etching study was performed to analyse the growth features of PNQI single crystal. The third order NLO properties such as nonlinear refractive index (n2), nonlinear absorption coefficient (β) and nonlinear susceptibility (χ (3)) of the crystal were investigated using Z-scan technique at 632.8 nm of Hesbnd Ne laser.
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Steady-state crack growth in single crystals under Mode I loading
DEFF Research Database (Denmark)
Juul, Kristian Jørgensen; Nielsen, Kim Lau; Niordson, Christian Frithiof
2017-01-01
The active plastic zone that surrounds the tip of a sharp crack growing under plane strain Mode I loading conditions at a constant velocity in a single crystal is studied. Both the characteristics of the plastic zone and its effect on the macroscopic toughness is investigated in terms of crack tip...... that the largest shielding effect develops in HCP crystals, while the lowest shielding exists for FCC crystals. Rate-sensitivity is found to affect the plastic zone size, but the characteristics overall remain similar for each individual crystal structure. An increasing rate-sensitivity at low crack velocities...... shielding due to plasticity (quantified by employing the Suo, Shih, and Varias set-up). Three single crystals (FCC, BCC, HCP) are modelled in a steady-state elastic visco-plastic framework, with emphasis on the influence of rate-sensitivity and crystal structures. Distinct velocity discontinuities...
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Colour centre-free perovskite single crystals
International Nuclear Information System (INIS)
Petit, Pierre-Olivier; Petit, Johan; Goldner, Philippe; Viana, Bruno
2009-01-01
Yb 3+ :YAlO 3 (YAP) and Yb 3+ :GdAlO 3 (GAP) are interesting 1 μm high-power laser media thanks to their very good thermo-mechanical properties. However, as-grown perovskite single crystals exhibit colour centres. Parasitic thermal load generated by these centres is deleterious for high-power laser action and can lead to crystal damages. Moreover these defects decrease Yb 3+ lifetime. They are related to trapped holes on the oxygen network. In the present work, several schemes to remove colour centres are presented. Attention is focused on cerium codoping, thermal annealing under reducing atmosphere and growth of non-stoechiometric compounds.
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Radiation effects in corundum single crystals
International Nuclear Information System (INIS)
Gevorkyan, V.A.; Harutunyan, V.V.; Hakhverdyan, E.A.
2005-01-01
On the basis of new experimental results and analysis of publications it is shown that in the lattice of corundum crystals the high-energy particles create stable structural defects due to knocking out of atoms from normal sites of the anionic sublattice; this leads to the formation of F and F '+ centers as well as to other complex [Al i '+ F] type color centers. The essence of 'radiation memory' effect in corundum single crystals is that the high-energy particles irradiation, annealing at high temperatures and additional irradiation by X-rays result in the restoration of some spectral bands of the optical absorption in the range 200-650 nm
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Synthesis and structural characterization of bulk Sb2Te3 single crystal
Sultana, Rabia; Gahtori, Bhasker; Meena, R. S.; Awana, V. P. S.
2018-05-01
We report the growth and characterization of bulk Sb2Te3 single crystal synthesized by the self flux method via solid state reaction route from high temperature melt (850˚C) and slow cooling (2˚C/hour) of constituent elements. The single crystal X-ray diffraction pattern showed the 00l alignment and the high crystalline nature of the resultant sample. The rietveld fitted room temperature powder XRD revealed the phase purity and rhombohedral structure of the synthesized crystal. The formation and analysis of unit cell structure further verified the rhombohedral structure composed of three quintuple layers stacked one over the other. The SEM image showed the layered directional growth of the synthesized crystal carried out using the ZEISS-EVOMA-10 scanning electron microscope The electrical resistivity measurement was carried out using the conventional four-probe method on a quantum design Physical Property Measurement System (PPMS). The temperature dependent electrical resistivity plot for studied Sb2Te3 single crystal depicts metallic behaviour in the absence of any applied magnetic field. The synthesis as well as the structural characterization of as grown Sb2Te3 single crystal is reported and discussed in the present letter.
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Sequential multiple-step europium ion implantation and annealing of GaN
Miranda, S. M C; Edwards, Paul R.; O'Donnell, Kevin Peter; Boćkowski, Michał X.; Alves, Eduardo Jorge; Roqan, Iman S.; Vantomme, André
; Lorenz, Katharina 2014-01-01
Sequential multiple Eu ion implantations at low fluence (1×1013 cm-2 at 300 keV) and subsequent rapid thermal annealing (RTA) steps (30 s at 1000 °C or 1100 °C) were performed on high quality nominally undoped GaN films grown by metal organic chemical vapour deposition (MOCVD) and medium quality GaN:Mg grown by hydride vapour phase epitaxy (HVPE). Compared to samples implanted in a single step, multiple implantation/annealing shows only marginal structural improvement for the MOCVD samples, but a significant improvement of crystal quality and optical activation of Eu was achieved in the HVPE films. This improvement is attributed to the lower crystalline quality of the starting material, which probably enhances the diffusion of defects and acts to facilitate the annealing of implantation damage and the effective incorporation of the Eu ions in the crystal structure. Optical activation of Eu3+ ions in the HVPE samples was further improved by high temperature and high pressure annealing (HTHP) up to 1400 °C. After HTHP annealing the main room temperature cathodo- and photoluminescence line in Mg-doped samples lies at ∼ 619 nm, characteristic of a known Mg-related Eu3+ centre, while after RTA treatment the dominant line lies at ∼ 622 nm, typical for undoped GaN:Eu. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Sequential multiple-step europium ion implantation and annealing of GaN
Miranda, S. M C
2014-01-20
Sequential multiple Eu ion implantations at low fluence (1×1013 cm-2 at 300 keV) and subsequent rapid thermal annealing (RTA) steps (30 s at 1000 °C or 1100 °C) were performed on high quality nominally undoped GaN films grown by metal organic chemical vapour deposition (MOCVD) and medium quality GaN:Mg grown by hydride vapour phase epitaxy (HVPE). Compared to samples implanted in a single step, multiple implantation/annealing shows only marginal structural improvement for the MOCVD samples, but a significant improvement of crystal quality and optical activation of Eu was achieved in the HVPE films. This improvement is attributed to the lower crystalline quality of the starting material, which probably enhances the diffusion of defects and acts to facilitate the annealing of implantation damage and the effective incorporation of the Eu ions in the crystal structure. Optical activation of Eu3+ ions in the HVPE samples was further improved by high temperature and high pressure annealing (HTHP) up to 1400 °C. After HTHP annealing the main room temperature cathodo- and photoluminescence line in Mg-doped samples lies at ∼ 619 nm, characteristic of a known Mg-related Eu3+ centre, while after RTA treatment the dominant line lies at ∼ 622 nm, typical for undoped GaN:Eu. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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International Nuclear Information System (INIS)
Song, Ki-Ryong; Lee, Jae-Hwan; Han, Sang-Hyun; Yi, Hye-Rin; Lee, Sung-Nam
2013-01-01
Graphical abstract: - Highlights: • We examine comparative studies of semipolar ELO-GaN film. • Semipolar ELO-GaN film was grown by three step growth method. • The achievement of smooth surface morphology of semipolar ELO-GaN. • The crystal and optical properties was significantly improved by ELO process. - Abstract: We investigated the growth mode and the crystal properties of lateral epitaxial overgrowth (LEO) semipolar (1 1 − 2 2) GaN by using the various SiO 2 pattern sizes of 6, 8, 10 and 12 μm with the window width of 4.0 μm. By using three-step growth technique, we successfully obtained the fully-coalescenced semipolar (1 1 − 2 2) LEO-GaN films regardless of the SiO 2 pattern sizes. However, the coalescence thickness of LEO-GaN film was decreased with decreasing SiO 2 pattern size, indicating that the coalescence of semipolar (1 1 − 2 2) GaN was easily formed by decreasing the pattern size of SiO 2 mask. The full width at half maximums (FWHMs) of X-ray rocking curves (XRCs) of LEO-GaN films decreased with increasing SiO 2 pattern size. In the pattern size of 4 × 10 μm, we achieved the minimum XRCs FWHM of 537 and 368 arc s with two different X-ray incident beam directions of [1 1 − 2 − 3] and [1 − 1 0 0], respectively. Moreover, the photoluminescence bandedge emission of semipolar (1 1 − 2 2) GaN was 45 times increased by LEO process. Based on these results, we concluded that the LEO pattern size of 4 × 10 μm would effectively decrease crystal defects of semipolar (1 1 − 2 2) GaN epilayer, resulting in an improvement of the optical properties
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International Nuclear Information System (INIS)
Zhou, X W; Jones, R E
2012-01-01
The thermal conductivity of a crystal is sensitive to the presence of surfaces and nanoscale defects. While this opens tremendous opportunities to tailor thermal conductivity, true ‘phonon engineering’ of nanocrystals for a specific electronic or thermoelectric application can only be achieved when the dependence of thermal conductivity on the defect density, size and spatial population is understood and quantified. Unfortunately, experimental studies of the effects of nanoscale defects are quite challenging. While molecular dynamics simulations are effective in calculating thermal conductivity, the defect density range that can be explored with feasible computing resources is unrealistically high. As a result, previous work has not generated a fully detailed understanding of the dependence of thermal conductivity on nanoscale defects. Using GaN as an example, we have combined a physically motivated analytical model and highly converged large-scale molecular dynamics simulations to study the effects of defects on thermal conductivity. An analytical expression for thermal conductivity as a function of void density, size, and population has been derived and corroborated with the model, simulations, and experiments. (paper)
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Abdullah, Q. N.; Ahmed, A. R.; Ali, A. M.; Yam, F. K.; Hassan, Z.; Bououdina, M.; Almessiere, M. A.
2018-05-01
This paper presents the investigation of the influence of the ammoniating time of GaN nanowires (NWs) on the crystalline structure, surface morphology, and optical characteristics. Morphological analysis indicates the growth of good quality and high density of NWs with diameters around 50 nm and lengths up to tens of microns after ammoniating for 30 min. Structural analysis shows that GaN NWs have a typical hexagonal wurtzite crystal structure. Raman spectroscopy confirms the formation of GaN compound with the presence of compressive stress. Photoluminescence (PL) measurements revealed two band emissions, an UV and a broad visible emission. Hydrogen sensor was subsequently fabricated by depositing Pt Schottky contact onto GaN NWs film. The sensor response was measured at various H2 concentrations ranged from 200 up to 1200 ppm at room temperature. It was found that the response increases significantly for low H2 concentration (200-300 ppm) to reach about 50% then increases smoothly to reach 60% at 1200 ppm. The as-fabricated sensor possesses higher performances as compared to similar devices reported in the literature.
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Crystal-field analysis of U3+ ions in K2LaX5 (X=Cl, Br or I) single crystals
Karbowiak, M.; Edelstein, N.; Gajek, Z.; Drożdżyński, J.
1998-11-01
An analysis of low temperature absorption spectra of U3+ ions doped in K2LaX5 (X=Cl, Br or I) single crystals is reported. The energy levels of the U3+ ion in the single crystals were assigned and fitted to a semiempirical Hamiltonian representing the combined atomic and crystal-field interactions at the Cs symmetry site. An analysis of the nephelauxetic effect and crystal-field splittings in the series of compounds is also reported.
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Encapsulation of nanoparticles into single-crystal ZnO nanorods and microrods.
Liu, Jinzhang; Notarianni, Marco; Rintoul, Llew; Motta, Nunzio
2014-01-01
One-dimensional single crystal incorporating functional nanoparticles of other materials could be an interesting platform for various applications. We studied the encapsulation of nanoparticles into single-crystal ZnO nanorods by exploiting the crystal growth of ZnO in aqueous solution. Two types of nanodiamonds with mean diameters of 10 nm and 40 nm, respectively, and polymer nanobeads with size of 200 nm have been used to study the encapsulation process. It was found that by regrowing these ZnO nanorods with nanoparticles attached to their surfaces, a full encapsulation of nanoparticles into nanorods can be achieved. We demonstrate that our low-temperature aqueous solution growth of ZnO nanorods do not affect or cause degradation of the nanoparticles of either inorganic or organic materials. This new growth method opens the way to a plethora of applications combining the properties of single crystal host and encapsulated nanoparticles. We perform micro-photoluminescence measurement on a single ZnO nanorod containing luminescent nanodiamonds and the spectrum has a different shape from that of naked nanodiamonds, revealing the cavity effect of ZnO nanorod.
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Method for single crystal growth of photovoltaic perovskite material and devices
Huang, Jinsong; Dong, Qingfeng
2017-11-07
Systems and methods for perovskite single crystal growth include using a low temperature solution process that employs a temperature gradient in a perovskite solution in a container, also including at least one small perovskite single crystal, and a substrate in the solution upon which substrate a perovskite crystal nucleates and grows, in part due to the temperature gradient in the solution and in part due to a temperature gradient in the substrate. For example, a top portion of the substrate external to the solution may be cooled.
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Single-crystal charge transfer interfaces for efficient photonic devices (Conference Presentation)
Alves, Helena; Pinto, Rui M.; Maçôas, Ermelinda M. S.; Baleizão, Carlos; Santos, Isabel C.
2016-09-01
Organic semiconductors have unique optical, mechanical and electronic properties that can be combined with customized chemical functionality. In the crystalline form, determinant features for electronic applications such as molecular purity, the charge mobility or the exciton diffusion length, reveal a superior performance when compared with materials in a more disordered form. Combining crystals of two different conjugated materials as even enable a new 2D electronic system. However, the use of organic single crystals in devices is still limited to a few applications, such as field-effect transistors. In 2013, we presented the first system composed of single-crystal charge transfer interfaces presenting photoconductivity behaviour. The system composed of rubrene and TCNQ has a responsivity reaching 1 A/W, corresponding to an external quantum efficiency of nearly 100%. A similar approach, with a hybrid structure of a PCBM film and rubrene single crystal also presents high responsivity and the possibility to extract excitons generated in acceptor materials. This strategy led to an extended action towards the near IR. By adequate material design and structural organisation of perylediimides, we demonstrate that is possible to improve exciton diffusion efficiency. More recently, we have successfully used the concept of charge transfer interfaces in phototransistors. These results open the possibility of using organic single-crystal interfaces in photonic applications.
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International Nuclear Information System (INIS)
Zolper, J.C.
1996-01-01
Ion implantation has played an enabling role in the realization of many high performance photonic and electronic devices in mature semiconductor materials systems such as Si and GaAs. This can also be expected to be the case in III-Nitride based devices as the material quality continues to improve. This paper reviews the progress in ion implantation processing of the III-Nitride materials, namely, GaN, AlN, InN and their alloys. Details are presented of the successful demonstrations of implant isolation as well as n- and p-type implantation doping of GaN. Implant doping has required activation annealing at temperatures in excess of 1,000 C. The nature of the implantation induced damage and its response to annealing is addressed using Rutherford Backscattering. Finally, results are given for the first demonstration of a GaN device fabricated using ion implantation doping, a GaN junction field effect transistor (JFET)
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International Nuclear Information System (INIS)
Choi, Yunju; Kim, Yangsoo; Ahn, Kwang-Soon; Kim, Hyunsoo
2014-01-01
Highlights: • The Cr/Au contact on n-type Ga-polar (0 0 0 1) GaN, N-polar (0 0 0 −1) GaN, and wet-etched N-polar GaN were investigated. • Thermal annealing led to a significant degradation of contact formed on N-polar n-GaN samples. • Contact degradation was shown to be closely related to the increase in the electrical resistivity of n-GaN. • Out-diffusion of Ga and N atoms was clearly observed in N-polar samples. - Abstract: The electrical characteristics and thermal stability of a Cr/Au contact formed on n-type Ga-polar (0 0 0 1) GaN, N-polar GaN, and wet-etched N-polar GaN were investigated. As-deposited Cr/Au showed a nearly ohmic contact behavior for all samples, i.e., the specific contact resistance was 3.2 × 10 −3 , 4.3 × 10 −4 , and 1.1 × 10 −3 Ω cm 2 for the Ga-polar, flat N-polar, and roughened N-polar samples, respectively. However, thermal annealing performed at 250 °C for 1 min in a N 2 ambient led to a significant degradation of contact, i.e., the contact resistance increased by 186, 3260, and 2030% after annealing for Ga-polar, flat N-polar, and roughened N-polar samples, respectively. This could be due to the different disruption degree of Cr/Au and GaN interface after annealing, i.e., the insignificant interfacial reaction occurred in the Ga-polar sample, while out-diffusion of Ga and N atoms was clearly observed in N-polar samples
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Energy Technology Data Exchange (ETDEWEB)
Choi, Yunju [School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Suncheon Center, Korea Basic Science Institute, Suncheon 540-742 (Korea, Republic of); Kim, Yangsoo [Suncheon Center, Korea Basic Science Institute, Suncheon 540-742 (Korea, Republic of); Ahn, Kwang-Soon, E-mail: kstheory@ynu.ac.kr [School of Chemical Engineering, Yeungnam University, Gyeongsan, Gyeongbuk 712-749 (Korea, Republic of); Kim, Hyunsoo, E-mail: hskim7@jbnu.ac.kr [School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)
2014-10-30
Highlights: • The Cr/Au contact on n-type Ga-polar (0 0 0 1) GaN, N-polar (0 0 0 −1) GaN, and wet-etched N-polar GaN were investigated. • Thermal annealing led to a significant degradation of contact formed on N-polar n-GaN samples. • Contact degradation was shown to be closely related to the increase in the electrical resistivity of n-GaN. • Out-diffusion of Ga and N atoms was clearly observed in N-polar samples. - Abstract: The electrical characteristics and thermal stability of a Cr/Au contact formed on n-type Ga-polar (0 0 0 1) GaN, N-polar GaN, and wet-etched N-polar GaN were investigated. As-deposited Cr/Au showed a nearly ohmic contact behavior for all samples, i.e., the specific contact resistance was 3.2 × 10{sup −3}, 4.3 × 10{sup −4}, and 1.1 × 10{sup −3} Ω cm{sup 2} for the Ga-polar, flat N-polar, and roughened N-polar samples, respectively. However, thermal annealing performed at 250 °C for 1 min in a N{sub 2} ambient led to a significant degradation of contact, i.e., the contact resistance increased by 186, 3260, and 2030% after annealing for Ga-polar, flat N-polar, and roughened N-polar samples, respectively. This could be due to the different disruption degree of Cr/Au and GaN interface after annealing, i.e., the insignificant interfacial reaction occurred in the Ga-polar sample, while out-diffusion of Ga and N atoms was clearly observed in N-polar samples.
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Synthesis and photocatalytic activity of mesoporous – (001) facets TiO_2 single crystals
International Nuclear Information System (INIS)
Dong, Yeshuo; Fei, Xuening; Zhou, Yongzhu
2017-01-01
Highlights: • The (001) facets of TiO_2 single crystals with mesoporous structure. • The (010) and (100) facets of TiO_2 single crystals were covered by the flower – shaped TiO_2 crystals. • This special structure could promote charge separation and provide more active sites, which will lead to a substantial increase in photocatalytic activity. - Abstract: In this work, the mesoporous – (001) facets TiO_2 single crystals have been successfully synthesized through a two-step solvothermal route without any template. Their structure and morphology were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), ultraviolet-visible (UV–vis) diffuse reflectance spectroscopy and energy dispersive X-ray spectrometer (EDX). Based on the different characteristics and atomic arrangements on each facet of anatase TiO_2 single crystals, we synthesized these mesoporous – (001) facets TiO_2 single crystals by controlling the interaction characteristics of hydrofluoric acid (HF) and isopropanol (i-PrOH) on the crystal facets. It can been seen that the (001) facets of these as-synthesized TiO_2 single crystals have a clear mesoporous structure through the SEM images and BET methods. Moreover, the other four facets were covered by the flower – shaped TiO_2 crystals with the generation of the mesoporous – (001) facets. This special and interesting morphology could promote charge separation and provide more active sites, which will lead to a substantial increase in photocatalytic activity. Moreover, it is more intuitive to reflect that the different crystal facets possess the different properties due to their atomic arrangement. Besides, according to the different synthetic routes, we proposed and discussed a plausible synthesis mechanism of these mesoporous – (001) facets TiO_2 single crystals.
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Neutron transmission of single-crystal sapphire filters
International Nuclear Information System (INIS)
Adib, M.; Kilany, M.; Habib, N.; Fathallah, M.
2004-01-01
A simple additive formula is given that permits the calculation of the nuclear capture, thermal diffuse and Bragg scattering cross-sections as a function of sapphire temperature and crystal parameters. We have developed a computer program that allows calculations of the thermal neutron transmission for the sapphire rhombohedral structure and its equivalent trigonal structure. The calculated total cross-section values and effective attenuation coefficient for mono-crystalline sapphire at different temperatures are compared with measured values. Overall agreement is indicated between the formula fits and experimental data. We discuss the use of sapphire single-crystal as a thermal neutron filter in terms of the optimum crystal thickness, mosaic spread, temperature, cutting plane and tuning for efficient transmission of thermal-reactor neutrons
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Microscopic single-crystal refractometry as a function of wavelength
International Nuclear Information System (INIS)
DeLoach, L.D.
1994-01-01
The refractive indices of crystal fragments 50--200 μm in size can be measured for light wavelengths between 365 and 1100 nm with a spindle-stage refractometer. Established methods from optical crystallograpy are used to orient a crystal on the microscope spindle stage and then to match its refractive index to an immersion fluid. The refractive index of the fluid for the wavelength of light and matching temperature is determined by comparison of a reference crystal on a second spindle axis with the fluid under the match conditions. Investigations of new nonlinear-optical crystals admirably demonstrate the advantages of measuring the refractive index to ± 0.0004 in small single crystals
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Effects of catalyst concentration and ultraviolet intensity on chemical mechanical polishing of GaN
Wang, Jie; Wang, Tongqing; Pan, Guoshun; Lu, Xinchun
2016-08-01
Effects of catalyst concentration and ultraviolet intensity on chemical mechanical polishing (CMP) of GaN were deeply investigated in this paper. Working as an ideal homogeneous substrate material in LED industry, GaN ought to be equipped with a smooth and flat surface. Taking the strong chemical stability of GaN into account, photocatalytic oxidation technology was adopted in GaN CMP process to realize efficient removal. It was found that, because of the improved reaction rate of photocatalytic oxidation, GaN material removal rate (MRR) increases by a certain extent with catalyst concentration increasing. Cross single line analysis on the surface after polishing by Phase Shift MicroXAM-3D was carried out to prove the better removal effect with higher catalyst concentration. Ultraviolet intensity field in H2O2-SiO2-based polishing system was established and simulated, revealing the variation trend of ultraviolet intensity around the outlet of the slurry. It could be concluded that, owing to the higher planarization efficiency and lower energy damage, the UV lamp of 125 W is the most appropriate lamp in this system. Based on the analysis, defects removal model of this work was proposed to describe the effects of higher catalyst concentration and higher power of UV lamp.
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AFM studies on heavy ion irradiated YBCO single crystals
International Nuclear Information System (INIS)
Lakhani, Archana; Marhas, M.K.; Saravanan, P.; Ganesan, V.; Srinivasan, R.; Kanjilal, D.; Mehta, G.K.; Elizabeth, Suja; Bhat, H.L.
2000-01-01
Atomic Force Microscopy (AFM) is extensively used to characterise the surface morphology of high energy ion irradiated single crystals of high temperature superconductor - YBCO. Our earlier systematic studies on thin films of YBCO under high energy and heavy ion irradiation shows clear evidence of ion induced sputtering or erosion, even though the effect is more on the grain boundaries. These earlier results were supported by electrical resistance measurements. In order to understand more clearly, the nature of surface modification at these high energies, AFM studies were carried out on single crystals of YBCO. Single crystals were chosen in order to see the effect on crystallites alone without interference from grain boundaries. 200 MeV gold ions were used for investigation using the facilities available at Nuclear Science Centre, New Delhi. The type of ion and the range of energies were chosen to meet the threshold for electronically mediated defect production. The results are in conformity with our earlier studies and will be described in detail in the context of electronic energy loss mediated sputtering or erosion. (author)
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Observation of plastic deformation in freestanding single crystal Au nanowires
International Nuclear Information System (INIS)
Lee, Dongyun; Zhao Manhong; Wei Xiaoding; Chen Xi; Jun, Seong C.; Hone, James; Herbert, Erik G.; Oliver, Warren C.; Kysar, Jeffrey W.
2006-01-01
Freestanding single crystal nanowires of gold were fabricated from a single grain of pure gold leaf by standard lithographic techniques, with center section of 7 μm in length, 250 nm in width, and 100 nm in thickness. The ends remained anchored to a silicon substrate. The specimens were deflected via nanoindenter until plastic deformation was achieved. Nonlocalized and localized plastic deformations were observed. The resulting force-displacement curves were simulated using continuum single crystal plasticity. A set of material parameters which closely reproduce the experimental results suggests that the initial critical resolved shear stress was as high as 135 MPa
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Sun, Enwei; Cao, Wenwu
2014-01-01
In the past decade, domain engineered relaxor-PT ferroelectric single crystals, including (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-PT), (1-x)Pb(Zn1/3Nb2/3)O3-xPbTiO3 (PZN-PT) and (1-x-y)Pb(In1/2Nb1/2)O3-yPb(Mg1/3Nb2/3)O3-xPbTiO3 (PIN-PMN-PT), with compositions near the morphotropic phase boundary (MPB) have triggered a revolution in electromechanical devices owing to their giant piezoelectric properties and ultra-high electromechanical coupling factors. Compared to traditional PbZr1-xTixO3 (PZT) ceramics, the piezoelectric coefficient d33 is increased by a factor of 5 and the electromechanical coupling factor k33 is increased from 90%. Many emerging rich physical phenomena, such as charged domain walls, multi-phase coexistence, domain pattern symmetries, etc., have posed challenging fundamental questions for scientists. The superior electromechanical properties of these domain engineered single crystals have prompted the design of a new generation electromechanical devices, including sensors, transducers, actuators and other electromechanical devices, with greatly improved performance. It took less than 7 years from the discovery of larger size PMN-PT single crystals to the commercial production of the high-end ultrasonic imaging probe “PureWave”. The speed of development is unprecedented, and the research collaboration between academia and industrial engineers on this topic is truly intriguing. It is also exciting to see that these relaxor-PT single crystals are being used to replace traditional PZT piezoceramics in many new fields outside of medical imaging. The new ternary PIN-PMN-PT single crystals, particularly the ones with Mn-doping, have laid a solid foundation for innovations in high power acoustic projectors and ultrasonic motors, hinting another revolution in underwater SONARs and miniature actuation devices. This article intends to provide a comprehensive review on the development of relaxor-PT single crystals, spanning material discovery, crystal growth
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Energy Technology Data Exchange (ETDEWEB)
Dhanaraj, P.V. [Centre for Crystal Growth, SSN College of Engineering, Kalavakkam 603 110 (India); Rajesh, N.P., E-mail: rajeshnp@hotmail.com [Centre for Crystal Growth, SSN College of Engineering, Kalavakkam 603 110 (India); Sundar, J. Kalyana; Natarajan, S. [Department of Physics, Madurai Kamaraj University, Madurai 625 021 (India); Vinitha, G. [Department of Physics, Crescent Engineering College, Chennai 600 048 (India)
2011-09-15
Highlights: {yields} Good quality crystals of nicotinium trifluoroacetate in monoclinic system were grown for first time. {yields} Nicotinium trifluoroacetate crystal exhibits third order nonlinear optical properties. {yields} The optical spectrum of nicotinium trifluoroacetate crystal reveals the wide transmission in the entire range with cutoff wavelength at 286 nm. {yields} Nicotinium trifluoroacetate is a low dielectric constant material. - Abstract: An organic material, nicotinium trifluoroacetate (NTF) was synthesized and single crystals in monoclinic system were grown from aqueous solution for the first time. Its solubility and metastable zone width were estimated. The crystal structure of NTF was analyzed to reveal the molecular arrangements and the formation of hydrogen bonds in the crystal. High-resolution X-ray diffraction rocking curve measurements were performed to analyze the structural perfection of the grown crystals. Functional groups in NTF were identified by Fourier transform infrared spectral analysis. Thermal behaviour and stability of NTF were studied by thermogravimetric and differential thermal analysis and differential scanning calorimetry. Mechanical and dielectric properties of NTF crystals were analyzed. Optical studies reveal that NTF crystals are transparent in the wavelength range 286-1100 nm. The third order nonlinear optical parameters of NTF were derived by the Z-scan technique.
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Cross-section of single-crystal materials used as thermal neutron filters
International Nuclear Information System (INIS)
Adib, M.
2005-01-01
Transmission properties of several single crystal materials important for neutron scattering instrumentation are presented. A computer codes are developed which permit the calculation of thermal diffuse and Bragg-scattering cross-sections of silicon., and sapphire as a function of material's constants, temperature and neutron energy, E, in the range 0.1 MeV .A discussion of the use of their single-crystal as a thermal neutron filter in terms of the optimum crystal thickness, mosaic spread, temperature, cutting plane and tuning for efficient transmission of thermal-reactor neutrons is given
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Energy Technology Data Exchange (ETDEWEB)
Cheze, Caroline
2010-03-04
This work focuses on the nucleation and growth mechanisms of GaN nanowires (NWs) by molecular beam epitaxy (MBE). The two main novelties of this study are the intensive employment of in-situ techniques and the direct comparison of selfinduced and catalyst-induced NWs. On silicon substrates, GaN NWs form in MBE without the use of any external catalyst seed. On sapphire, in contrast, NWs grow under identical conditions only in the presence of Ni seeds. NW nucleation was studied in situ by reflection high-energy electron diffraction (RHEED) in correlation with line-of-sight quadrupole mass spectrometry (QMS). The latter technique allows to monitor the incorporated amount of Ga. For the catalyst-assisted approach, three nucleation stages were identified: first incorporation of Ga into the Ni seeds, second transformation of the seed crystal structure due to Ga accumulation, and last GaN growth under the seeds. The crystalline structure of the seeds during the first two stages is in accord with the Ni-Ga binary phase diagram and evidenced that only Ga incorporates into the Ni particles. GaN forms only after the Ga concentration is larger than the one of Ni. The observation of diffraction patterns generated by the Ni-Ga seed particles during the whole nucleation evidences the solid state of the seeds. Moreover, the QMS study showed that it is not Ga incorporation into Ni but GaN nucleation itself that limits the growth processes. For the self-induced NWs, QMS and RHEED investigations indicate very similar nucleation processes on Si(001) and Si(111) and two nucleation stages were identified. Transmission electron microscopy on samples grown on Si(001) revealed that the first stage is characterized by the competition between the nucleation of crystalline Si{sub x}N{sub y} and GaN. During this stage, the Si surface strongly roughens by the formation of pits and Si mounds. At the same time, very few GaN islands nucleate. During the second stage, the amorphization of the Si
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Investigations of morphological changes during annealing of polyethylene single crystals
Tian, M.; Loos, J.
2001-01-01
The morphological evolution of isolated individual single crystals deposited on solid substrates was investigated during annealing experiments using in situ and ex situ atomic force microscopy techniques. The crystal morphology changed during annealing at temperatures slightly above the original
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Antiferromagnetism in chromium alloy single crystals
DEFF Research Database (Denmark)
Bjerrum Møller, Hans; Trego, A.L.; Mackintosh, A.R.
1965-01-01
The antiferromagnetism of single crystals of dilute alloys of V, Mn and Re in Cr has been studied at 95°K and 300°K by neutron diffraction. The addition of V causes the diffraction peaks to decrease in intensity and move away from (100), while Mn and Re cause them to increase and approach (100) s...
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Gate less-FET pH Sensor Fabricated on Undoped AlGaN/ GaN HEMT Structure
International Nuclear Information System (INIS)
Maneea Eizadi Sharifabad; Mastura Shafinaz Zainal Abidin; Shaharin Fadzli Abd Rahman; Abdul Manaf Hashim; Abdul Rahim Abdul Rahman
2011-01-01
Gallium nitride with wurtzite crystal structure is a chemically stable semiconductor with high internal spontaneous and piezoelectric polarization, which make it highly suitable materials to create very sensitive and robust sensors for the detection of ions, gases and liquids. Sensing characteristics of an open-gate liquid-phase sensor fabricated on undoped-AlGaN/ GaN high-electron-mobility-transistor (HEMT) structure in aqueous solution was investigated. In ambient atmosphere, the open-gate undoped AlGaN/ GaN HEMT clearly showed only the presence of linear region of currents while Si-doped AlGaN/ GaN showed the linear and saturation regions of currents, very similar to those of gated devices. This seems to show that very low Fermi level pinning by surface states exists in undoped AlGaN/ GaN sample. In aqueous solution, the typical current-voltage (I-V) characteristics of HEMTs with good gate controllability were observed. The potential of the AlGaN surface at the open-gate area is effectively controlled via aqueous solution by Ag/ AgCl reference gate electrode. The open-gate undoped AlGaN/ GaN HEMT structure is capable of stable operation in aqueous electrolytes and exhibit linear sensitivity, and high sensitivity of 1.9 mA/ pH or 3.88 mA/ mm/ pH at drain-source voltage, VDS = 5 V was obtained. Due to large leakage current where it increases with the negative reference gate voltage, the Nernstians like sensitivity cannot be determined. Suppression of current leakage is likely to improve the device performance. The open-gate undoped-AlGaN/ GaN structure is expected to be suitable for pH sensing application. (author)
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Optical properties of Sulfur doped InP single crystals
El-Nahass, M. M.; Youssef, S. B.; Ali, H. A. M.
2014-05-01
Optical properties of InP:S single crystals were investigated using spectrophotometric measurements in the spectral range of 200-2500 nm. The absorption coefficient and refractive index were calculated. It was found that InP:S crystals exhibit allowed and forbidden direct transitions with energy gaps of 1.578 and 1.528 eV, respectively. Analysis of the refractive index in the normal dispersion region was discussed in terms of the single oscillator model. Some optical dispersion parameters namely: the dispersion energy (Ed), single oscillator energy (Eo), high frequency dielectric constant (ɛ∞), and lattice dielectric constant (ɛL) were determined. The volume and the surface energy loss functions (VELF & SELF) were estimated. Also, the real and imaginary parts of the complex conductivity were calculated.
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International Nuclear Information System (INIS)
Lau, S.T.; Lam, K.H.; Chan, H.L.W.; Choy, C.L.; Luo, H.S.; Yin, Q.R.; Yin, Z.W.
2004-01-01
Ferroelectric lead magnesium niobate-lead titanate (PMN-PT) single crystals with a composition around the rhombohedral-tetragonal morphotropic phase boundary (65 mol% of PMN) were used to fabricate single-element needle-type hydrophones for measuring the spatial and temporal characteristics of medical ultrasonic transducers. PMN-PT single crystal was grown by a modified Bridgman method. Discs (0.5 mm thick) with normal along the direction were cut and then poled by a dc field in the thickness direction. The single crystal has a high relative permittivity (ε r ∼4000) making it appropriate for small area hydrophone applications. Single-element needle-type hydrophones with this material as the sensing element have been fabricated and characterized. The hydrophones have flat frequency response and good receiving sensitivity over certain frequency range in the megahertz region
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On the growth of calcium tartrate tetrahydrate single crystals
Indian Academy of Sciences (India)
Unknown
Abstract. Calcium tartrate single crystals were grown using silica gel as the growth medium. Calcium for- mate mixed with formic acid was taken as the supernatant solution. It was observed that the nucleation den- sity was reduced and the size of the crystals was improved to a large extent compared to the conventional way.
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GaN Nanowire Arrays for High-Output Nanogenerators
Huang, Chi-Te
2010-04-07
Three-fold symmetrically distributed GaN nanowire (NW) arrays have been epitaxially grown on GaN/sapphire substrates. The GaN NW possesses a triangular cross section enclosed by (0001), (2112), and (2112) planes, and the angle between the GaN NW and the substrate surface is ∼62°. The GaN NW arrays produce negative output voltage pulses when scanned by a conductive atomic force microscope in contact mode. The average of piezoelectric output voltage was about -20 mV, while 5-10% of the NWs had piezoelectric output voltages exceeding -(0.15-0.35) V. The GaN NW arrays are highly stable and highly tolerate to moisture in the atmosphere. The GaN NW arrays demonstrate an outstanding potential to be utilized for piezoelectric energy generation with a performance probably better than that of ZnO NWs. © 2010 American Chemical Society.
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Commensurability oscillations in NdBa2Cu3Oy single crystals
Indian Academy of Sciences (India)
gated by angular dependent magnetization in very pure twinned and twin-free NdBa2 Cu3 Oy single ... The layered structure and the c-axis coherence length, ξc ≈ 4 ˚A, smaller than the lattice ... The high quality of both crystals is demonstrated by ... Commensurability oscillations in NdBa2Cu3Oy single crystals. 2. 3. 4. 5. 6.
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Cryogenic motion performances of a piezoelectric single crystal micromotor
Li, Xiaotian; Wu, Yuting; Chen, Zhijiang; Wei, Xiaoyong; Luo, Haosu; Dong, Shuxiang
2014-04-01
This study investigates the cryogenic performances of a millimeter-size piezoelectric ultrasonic linear micromotor. The piezoelectric vibrator of the micromotor is made of Pb(In1/2Nb1/2)O3 -Pb(Mg1/3Nb2/3)-PbTiO3 single crystal and operated in first-bending wobbling mode. Experiments show that the piezoelectric single crystal micromotor works effectively even at extremely low temperature of -175 °C, although its resonance peaks vary with temperature significantly. This work confirms the feasibility of cryogenic operation of the piezo-micromotor, which is meaningful for aerospace or superconducting microwave application.
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Preparation of single-crystal copper ferrite nanorods and nanodisks
International Nuclear Information System (INIS)
Du Jimin; Liu Zhimin; Wu Weize; Li Zhonghao; Han Buxing; Huang Ying
2005-01-01
This article, for the first time, reports the preparation of single-crystal copper ferrite nanorods and nanodisks. Using amorphous copper ferrite nanoparticles synthesized by reverse micelle as reaction precursor, single-crystal copper ferrite nanorods were synthesized via hydrothermal method in the presence of surfactant polyethylene glycol (PEG), however, copper ferrite nanodisks were prepared through the same procedures except the surfactant PEG. The resulting nanomaterials have been characterized by powder X-ray diffraction (XRD), selected electron area diffraction (SEAD), and transmission electron microscopy (TEM). The bulk composition of the samples was determined by means of X-ray photoelectron spectroscopy (XPS)
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Directory of Open Access Journals (Sweden)
T. F. Gundogdu
2014-01-01
Full Text Available We studied a high indium content (0.8 InGaN based solar cell design where the active InGaN layer is sandwiched between a GaN cap layer and a GaN spacer layer. The incorporation of the sacrificial cap layer allows for the etching of the front surface without removing the active InGaN resulting in a 50% enhancement of the short-circuit current density for a 15 nm-thick InGaN layer.
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Directory of Open Access Journals (Sweden)
Jinghui Li
2015-01-01
Full Text Available In order to investigate the anisotropic micromechanical properties of single-crystal nickel-based superalloy DD99 of four crystallographic orientations, (001, (215, (405, and (605, microindentation test (MIT was conducted with different loads and loading velocities by a sharp Berkovich indenter. Some material parameters reflecting the micromechanical behavior of DD99, such as microhardness H, Young’s modulus E, yield stress σy, strain hardening component n, and tensile strength σb, can be obtained from load-displacement relations. H and E of four different crystal planes evidently decrease with the increase of h. The reduction of H is due to dislocation hardening while E is related to interplanar spacing and crystal variable. σy of (215 is the largest among four crystal planes, followed by (605, and (001 has the lowest value. n of (215 is the lowest, followed by (605, and that of (001 is the largest. Subsequently, a simplified elastic-plastic material model was employed for 3D microindentation simulation of DD99 with various crystal orientations. The simulation results agreed well with experimental, which confirmed the accuracy of the simplified material model.
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Huang, Chao; Wu, Jie; Song, Chuanjun; Ding, Ran; Qiao, Yan; Hou, Hongwei; Chang, Junbiao; Fan, Yaoting
2015-06-28
Upon single-crystal-to-single-crystal (SCSC) oxidation/reduction, reversible structural transformations take place between the anionic porous zeolite-like Cu(I) framework and a topologically equivalent neutral Cu(I)Cu(II) mixed-valent framework. The unique conversion behavior of the Cu(I) framework endowed it as a redox-switchable catalyst for the direct arylation of heterocycle C-H bonds.
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Surface relief grating formation on a single crystal of 4-(dimethylamino)azobenzene
International Nuclear Information System (INIS)
Nakano, Hideyuki; Tanino, Takahiro; Shirota, Yasuhiko
2005-01-01
Surface relief grating (SRG) formation on an organic single crystal by irradiation with two coherent laser beams has been demonstrated by using 4-(dimethylamino)azobenzene (DAAB). It was found that the SRG formation was greatly depending upon both the coordination of the crystal and the polarization of the writing beams. The dependence of the polarization of writing beams on the SRG formation using the single crystal was found to be quite different from that reported for amorphous polymers and photochromic amorphous molecular materials, suggesting that the mechanism of the SRG formation on the organic crystal is somewhat different from that on amorphous materials
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Encapsulation of nanoparticles into single-crystal ZnO nanorods and microrods
Directory of Open Access Journals (Sweden)
Jinzhang Liu
2014-04-01
Full Text Available One-dimensional single crystal incorporating functional nanoparticles of other materials could be an interesting platform for various applications. We studied the encapsulation of nanoparticles into single-crystal ZnO nanorods by exploiting the crystal growth of ZnO in aqueous solution. Two types of nanodiamonds with mean diameters of 10 nm and 40 nm, respectively, and polymer nanobeads with size of 200 nm have been used to study the encapsulation process. It was found that by regrowing these ZnO nanorods with nanoparticles attached to their surfaces, a full encapsulation of nanoparticles into nanorods can be achieved. We demonstrate that our low-temperature aqueous solution growth of ZnO nanorods do not affect or cause degradation of the nanoparticles of either inorganic or organic materials. This new growth method opens the way to a plethora of applications combining the properties of single crystal host and encapsulated nanoparticles. We perform micro-photoluminescence measurement on a single ZnO nanorod containing luminescent nanodiamonds and the spectrum has a different shape from that of naked nanodiamonds, revealing the cavity effect of ZnO nanorod.
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Silicon—a new substrate for GaN growth
Indian Academy of Sciences (India)
Unknown
of GaN devices based on silicon is the thermal mismatch of GaN and Si, which generates cracks. In 1998, the .... Considerable research is being carried out on GaN HEMTs at present. ... by InGaN/GaN multiquantum well in MOVPE was first.
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International Nuclear Information System (INIS)
Sharonov, G.V.; Petrov, S.A.; Bol'shakov, A.P.; Ral'chenko, V.G.; Kazyuchits, N.M.
2010-01-01
The prospects for use of CVD-technology for epitaxial growth of single-crystal diamond films of instrumental quality in UHF plasma for the production of optoelectronic devices are discussed. A technology for processing diamond single crystals that provides a perfect surface crystal structure with roughness less than 0,5 nm was developed. It was demonstrated that selective UV detectors based on synthetic single-crystal diamond substrates coated with single-crystal films can be produced. A criterion for selecting clean and structurally perfect single crystals of synthetic diamond was developed for the epitaxial growth technology. (authors)
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Blue luminescence in Tm3+-doped KGd(WO4)2 single crystals
International Nuclear Information System (INIS)
Gueell, F.; Mateos, X.; Gavalda, Jna.; Sole, R.; Aguilo, M.; Diaz, F.; Massons, J.
2004-01-01
Up-conversion blue emissions of trivalent thulium ions in monoclinic KGd(WO 4 ) 2 single crystals at 454 and 479 nm are reported for a single pump laser source at 688 nm. We grew thulium-doped KGd(WO 4 ) 2 single crystals at several concentrations from 0.1% to 10%. We recorded a polarized optical absorption spectrum for the 3 F 2 + 3 F 3 energy levels of thulium at room temperature and low temperature (6 K). From the low temperature emission spectra we determined the splitting of the 3 H 6 ground state. The blue emissions are characterized as a function of the dopant concentration and temperature from 10 K to room temperature. To our knowledge, this is the first time that sequential two-photon excitation process (STEP) generated blue emissions in thulium-doped single crystals with a single excitation wavelength
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Sudhakar, K.; Nandhini, S.; Muniyappan, S.; Arumanayagam, T.; Vivek, P.; Murugakoothan, P.
2018-04-01
Ammonium sulfate hydrogen sulphamate (ASHS), an inorganic nonlinear optical crystal, was grown from the aqueous solution by slow evaporation solution growth technique. The single-crystal XRD confirms that the grown single crystal belongs to the orthorhombic system with the space group of Pna21. Powder XRD confirms the crystalline nature and the diffraction planes were indexed. Crystalline perfection of grown crystal was analysed by high-resolution X-ray diffraction rocking curve technique. UV-Vis-NIR studies revealed that ASHS crystal has optical transparency 65% and lower cut-off wavelength at 218 nm. The violet light emission of the crystal was identified by photoluminescence studies. The particle size-dependent second-harmonic generation efficiency for ASHS crystal was evaluated by Kurtz-Perry powder technique using Nd:YAG laser which established the existence of phase matching. Surface laser damage threshold value was evaluated using Nd:YAG laser. Optical homogeneity of the crystal was evaluated using modified channel spectrum method through birefringence study. Thermal analysis reveals that ASHS crystal is stable up to 213 °C. The mechanical behaviour of the ASHS crystal was analysed using Vickers microhardness study.
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Beryllium, zinc and lead single crystals as a thermal neutron monochromators
Energy Technology Data Exchange (ETDEWEB)
Adib, M.; Habib, N. [Reactor Physics Department, NRC, Atomic Energy Authority, Cairo (Egypt); Bashter, I.I. [Physics Department, Faculty of Science, Zagazig University (Egypt); Morcos, H.N.; El-Mesiry, M.S. [Reactor Physics Department, NRC, Atomic Energy Authority, Cairo (Egypt); Mansy, M.S., E-mail: drmohamedmansy88@hotmail.com [Physics Department, Faculty of Science, Zagazig University (Egypt)
2015-03-15
Highlights: •Monochromatic features of Be, Zn and Pb single crystals. •Calculations of neutron reflectivity using a computer program MONO. •Optimum mosaic spread, thickness and cutting plane of single crystals. -- Abstract: The monochromatic features of Be, Zn and Pb single crystals are discussed in terms of orientation, mosaic spread, and thickness within the wavelength band from 0.04 up to 0.5 nm. A computer program MONO written in “FORTRAN-77”, has been adapted to carry out the required calculations. Calculations show that a 5 mm thick of beryllium (HCP structure) single crystal cut along its (0 0 2) plane having 0.6° FWHM are the optimum parameters when it is used as a monochromator with high reflected neutron intensity from a thermal neutron flux. Furthermore, at wavelengths shorter than 0.16 nm it is free from the accompanying higher order ones. Zinc (HCP structure) has the same parameters, with intensity much less than the latter. The same features are seen with lead (FCC structure) cut along its (3 1 1) plane with less reflectivity than the former. However, Pb (3 1 1) is more preferable than others at neutron wavelengths ⩽ 0.1 nm, since the glancing angle (θ ∼ 20°) is more suitable to carry out diffraction experiments. For a cold neutron flux, the first-order neutrons reflected from beryllium is free from the higher orders up to 0.36 nm. While for Zn single crystal is up to 0.5 nm.
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Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates
Monemar, Bo; Paskov, Plamen; Pozina, Galia; Hemmingsson, Carl; Bergman, Peder; Lindgren, David; Samuelson, Lars; Ni, Xianfeng; Morkoç, Hadis; Paskova, Tanya; Bi, Zhaoxia; Ohlsson, Jonas
2011-01-01
Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 1018cm-3 to well above 1019 cm-3. The samples were grown with MOCVD at reduced pressure on low defect density m-plane bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9 eV to 3.3 eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependenc...
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Welding and Weldability of Directionally Solidified Single Crystal Nickel-Base Superalloys
Energy Technology Data Exchange (ETDEWEB)
Vitek, J M; David, S A; Reed, R W; Burke, M A; Fitzgerald, T J
1997-09-01
Nickel-base superalloys are used extensively in high-temperature service applications, and in particular, in components of turbine engines. To improve high-temperature creep properties, these alloys are often used in the directionally-solidified or single-crystal form. The objective of this CRADA project was to investigate the weldability of both experimental and commercial nickel-base superalloys in polycrystalline, directionally-solidified, and single-crystal forms.
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Synthesis and ultrastructure of plate-like apatite single crystals as a model for tooth enamel
International Nuclear Information System (INIS)
Zhuang, Zhi; Yoshimura, Hideyuki; Aizawa, Mamoru
2013-01-01
Hydroxyapatite (HAp) is an inorganic constituent compound of human bones and teeth, with superior biocompatibility and bioactivity characteristics. Its crystal structure is hexagonal, characterized by a(b)- and c-planes. In vertebrate long bones, HAp crystals have a c-axis orientation, while in tooth enamel, they have an a(b)-axis orientation. Many methods can be used to synthesize c-axis oriented HAp single crystals; however, to the best of our knowledge, there have been no reports on a synthesis method for a(b)-axis oriented HAp single crystals. In this study, we successfully synthesized plate-like HAp crystals at the air–liquid interface of a starting solution via an enzyme reaction of urea with urease. Crystal phase analysis and ultrastructure observations were carried out, and the results indicated that the particles were single crystals, with almost the same a(b)-axis orientation as tooth enamel. It is hoped that by utilizing their unique surface charge and atomic arrangement, the resulting particles can be used as a high-performance biomaterial, capable of adsorbing bio-related substances and a model for tooth enamel. - Highlights: ► Synthesis of plate-like hydroxyapatite crystals at air–liquid interface ► Ultrastructural analysis of plate-like hydroxyapatite crystals ► Plate-like hydroxyapatite single crystals with a high a(b)-axis orientation ► Plate-like hydroxyapatite single crystals as a model for tooth enamel
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Synthesis and ultrastructure of plate-like apatite single crystals as a model for tooth enamel
Energy Technology Data Exchange (ETDEWEB)
Zhuang, Zhi, E-mail: zhuang@meiji.ac.jp [Department of Applied Chemistry, School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571 (Japan); Yoshimura, Hideyuki, E-mail: hyoshi@isc.meiji.ac.jp [Department of Physics, School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571 (Japan); Aizawa, Mamoru, E-mail: mamorua@isc.meiji.ac.jp [Department of Applied Chemistry, School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571 (Japan)
2013-07-01
Hydroxyapatite (HAp) is an inorganic constituent compound of human bones and teeth, with superior biocompatibility and bioactivity characteristics. Its crystal structure is hexagonal, characterized by a(b)- and c-planes. In vertebrate long bones, HAp crystals have a c-axis orientation, while in tooth enamel, they have an a(b)-axis orientation. Many methods can be used to synthesize c-axis oriented HAp single crystals; however, to the best of our knowledge, there have been no reports on a synthesis method for a(b)-axis oriented HAp single crystals. In this study, we successfully synthesized plate-like HAp crystals at the air–liquid interface of a starting solution via an enzyme reaction of urea with urease. Crystal phase analysis and ultrastructure observations were carried out, and the results indicated that the particles were single crystals, with almost the same a(b)-axis orientation as tooth enamel. It is hoped that by utilizing their unique surface charge and atomic arrangement, the resulting particles can be used as a high-performance biomaterial, capable of adsorbing bio-related substances and a model for tooth enamel. - Highlights: ► Synthesis of plate-like hydroxyapatite crystals at air–liquid interface ► Ultrastructural analysis of plate-like hydroxyapatite crystals ► Plate-like hydroxyapatite single crystals with a high a(b)-axis orientation ► Plate-like hydroxyapatite single crystals as a model for tooth enamel.
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Single Crystal Synthesis and STM Studies of High Temperature Superconductors
Barrientos, Alfonso
1997-01-01
This is a final report for the work initiated in September of 1994 under the grant NAG8-1085 - NASA/OMU, on the fabrication of bulk and single crystal synthesis, specific heat measuring and STM studies of high temperature superconductors. Efforts were made to fabricate bulk and single crystals of mercury based superconducting material. A systematic thermal analysis on the precursors for the corresponding oxides and carbonates were carried out to synthesized bulk samples. Bulk material was used as seed in an attempt to grow single crystals by a two-step self flux process. On the other hand bulk samples were characterized by x-ray diffraction, electrical resistivity and magnetic susceptibility, We studied the specific heat behavior in the range from 80 to 300 K. Some preliminary attempts were made to study the atomic morphology of our samples. As part of our efforts we built an ac susceptibility apparatus for measuring the transition temperature of our sintered samples.
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Epitaxial GaN around ZnO nanopillars
Energy Technology Data Exchange (ETDEWEB)
Fikry, Mohamed; Scholz, Ferdinand [Institut fuer Optoelektronik, Universitaet Ulm, Albert-Einstein-Allee 45, 89081 Ulm (Germany); Madel, Manfred; Tischer, Ingo; Thonke, Klaus [Institut fuer Quantenmaterie, Universitaet Ulm, Albert-Einstein-Allee 45, 89081 Ulm (Germany)
2011-07-01
We report on an investigation of the epitaxial quality of GaN layers overgrown coaxially around ZnO nanopillars. In a first step, regularly arranged ZnO nanopillars were grown using pre-patterning by e-beam lithography or self-organized hexagonal polystyrene sphere masks. Alternatively, ZnO pillars were also successfully grown on top of GaN pyramids. In a second step, GaN layers were grown around the ZnO pillars by Metal Organic Vapor Phase Epitaxy. At growth temperatures above 800 C, the ZnO pillars are dissolved by the hydrogen carrier gas leaving hollow GaN nanotubes. Characterization involved photoluminescence (PL), scanning electron microscopy and cathodoluminescence. The fair quality of the deposited GaN layers is confirmed by a sharp low temperature PL peak at 3.48 eV attributed to the donor bound exciton emission. Further peaks at 3.42 eV and 3.29 eV show the possible existence of basal plane and prismatic stacking faults.
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Dislocation-induced nanoparticle decoration on a GaN nanowire.
Yang, Bing; Yuan, Fang; Liu, Qingyun; Huang, Nan; Qiu, Jianhang; Staedler, Thorsten; Liu, Baodan; Jiang, Xin
2015-02-04
GaN nanowires with homoepitaxial decorated GaN nanoparticles on their surface along the radial direction have been synthesized by means of a chemical vapor deposition method. The growth of GaN nanowires is catalyzed by Au particles via the vapor-liquid-solid (VLS) mechanism. Screw dislocations are generated along the radial direction of the nanowires under slight Zn doping. In contrast to the metal-catalyst-assisted VLS growth, GaN nanoparticles are found to prefer to nucleate and grow at these dislocation sites. High-resolution transmission electron microscopy (HRTEM) analysis demonstrates that the GaN nanoparticles possess two types of epitaxial orientation with respect to the corresponding GaN nanowire: (I) [1̅21̅0]np//[1̅21̅0]nw, (0001)np//(0001)nw; (II) [1̅21̅3]np//[12̅10]nw, (101̅0)np//(101̅0)nw. An increased Ga signal in the energy-dispersive spectroscopy (EDS) profile lines of the nanowires suggests GaN nanoparticle growth at the edge surface of the wires. All the crystallographic results confirm the importance of the dislocations with respect to the homoepitaxial growth of the GaN nanoparticles. Here, screw dislocations situated on the (0001) plane provide the self-step source to enable nucleation of the GaN nanoparticles.
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Crystal growth and luminescence properties of Pr-doped LuLiF4 single crystal
International Nuclear Information System (INIS)
Sugiyama, Makoto; Yanagida, Takayuki; Yokota, Yuui; Kurosawa, Shunsuke; Fujimoto, Yutaka; Yoshikawa, Akira
2013-01-01
0.1, 1, and 3% Pr (with respect to Lu) doped LuLiF 4 (Pr:LuLiF 4 ) single crystals were grown by the micro-pulling-down (μ-PD) method. Transparency of the grown crystals was higher than 70% in the visible wavelength region with some absorption bands due to Pr 3+ 4f-4f transitions. Intense absorption bands related with the Pr 3+ 4f-5d transitions were observed at 190 and 215 nm. In radioluminescence spectra, Pr 3+ 5d-4f emissions were observed at 220, 240, 340, and 405 nm. In the pulse height spectra recorded under 137 Cs γ-ray excitation, the Pr 3% doped sample showed the highest light yield of 2050 photons/MeV and the scintillation decay time of it exhibited 23 and 72 ns also excited by 137 Cs γ-ray. -- Highlights: ► 0.1, 1, and 3% Pr-doped LuLiF 4 single crystals were grown by the μ-PD method. ► Pr 3+ 5d-4f emission peaks appeared at 220, 240, 340, and 405 nm ► The Pr 3%:LuLiF 4 crystal showed the highest light yield of 2050 photons/MeV
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Stacking fault tetrahedron induced plasticity in copper single crystal
Energy Technology Data Exchange (ETDEWEB)
Zhang, Liang, E-mail: lz592@uowmail.edu.au [School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, Wollongong, NSW 2522 (Australia); Lu, Cheng, E-mail: chenglu@uow.edu.au [School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, Wollongong, NSW 2522 (Australia); Tieu, Kiet; Su, Lihong; Zhao, Xing [School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, Wollongong, NSW 2522 (Australia); Pei, Linqing [Department of Mechanical Engineering, Chongqing University, Chongqing 400044 (China)
2017-01-05
Stacking fault tetrahedron (SFT) is the most common type of vacancy clustered defects in fcc metals and alloys, and can play an important role in the mechanical properties of metallic materials. In this study, molecular dynamics (MD) simulations were carried out to investigate the incipience of plasticity and the underlying atomic mechanisms in copper single crystals with SFT. Different deformation mechanisms of SFT were reported due to the crystal orientations and loading directions (compression and tension). The results showed that the incipient plasticity in crystals with SFT resulted from the heterogeneous dislocation nucleation from SFT, so the stress required for plastic deformation was less than that needed for perfect single crystals. Three crystal orientations ([1 0 0], [1 1 0] and [1 1 1]) were specified in this study because they can represent most of the typical deformation mechanisms of SFT. MD simulations revealed that the structural transformation of SFT was frequent under the applied loading; a metastable SFT structure and the collapse of SFT were usually observed. The structural transformation resulted in a different reduction of yield stress in compression and tension, and also caused a decreased or reversed compression/tension asymmetry. Compressive stress can result in the unfaulting of Frank loop in some crystal orientations. According to the elastic theory of dislocation, the process of unfaulting was closely related to the size of the dislocation loop and the stacking fault energy.
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Directory of Open Access Journals (Sweden)
Yu-An Chen
2014-01-01
Full Text Available GaN epitaxial layers with embedded air voids grown on patterned SiO2 AlN/sapphire templates were proposed. Using interruption-free epitaxial lateral overgrowth technology, we realized uninterrupted growth and controlled the shape of embedded air voids. These layers showed improved crystal quality using X-ray diffraction and measurement of etching pits density. Compared with conventional undoped-GaN film, the full width at half-maximum of the GaN (0 0 2 and (1 0 2 peaks decreased from 485 arcsec to 376 arcsec and from 600 arcsec to 322 arcsec, respectively. Transmission electron microscopy results showed that the coalesced GaN growth led to bending threading dislocation. We also proposed a growth model based on results of scanning electron microscopy.
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Preparation and characterization of single-crystal multiferroic nanofiber composites
Energy Technology Data Exchange (ETDEWEB)
Ren, Zhaohui; Xiao, Zhen; Yin, Simin; Mai, Jiangquan; Liu, Zhenya; Xu, Gang; Li, Xiang; Shen, Ge [State Key Lab of Silicon Materials, Department of Material Science and Engineering, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou 310027 (China); Han, Gaorong, E-mail: hgr@zju.edu.cn [State Key Lab of Silicon Materials, Department of Material Science and Engineering, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou 310027 (China)
2013-03-05
Graphical abstract: One-dimensional single-crystal multiferroic composites composed of PbTiO{sub 3} nanofiber-CoFe{sub 2}O{sub 4} nanodot have been prepared for the first time by a facile in situ solid state sintering method. The composites demonstrate ferroelectricity and ferromagnetism as well as strong coupling between them. Highlights: ► 1D single-crystal multiferroic PTO-CFO was prepared via in situ solid state sintering method. ► A simple epitaxial growth relation has been found between the PTO–CFO composites. ► The composites reveal ferroelectricity and ferromagnetism as well as coupling between them. -- Abstract: One-dimensional single-crystal multiferroic composites consisting of PbTiO{sub 3} (PTO) nanofiber-CoFe{sub 2}O{sub 4} (CFO) nanodot were prepared using an in situ solid state sintering method, where pre-perovskite PTO nanofibers and CFO nanodots were used as precursors. Structural analyses by using transmission electron microscopy, scanning electron microscopy and X-ray diffraction determined a epitaxial growth relation between the PTO nanofiber and the CFO nanodot. Ferromagnetism and ferroelectricity of the nanofiber composites were investigated by using vibarting sample magnetometer (VSM) and piezoresponse force microscopy (PFM)
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Effect of SiC buffer layer on GaN growth on Si via PA-MBE
Kukushkin, S. A.; Mizerov, A. M.; Osipov, A. V.; Redkov, A. V.; Telyatnik, R. S.; Timoshnev, S. N.
2017-11-01
The study is devoted to comparison of GaN thin films grown on SiC/Si substrates made by the method of atoms substitution with the films grown directly on Si substrates. The growth was performed in a single process via plasma assisted molecular beam epitaxy. The samples were studied via optical microscopy, Raman spectroscopy, ellipsometry, and a comparison of their characteristics was made. Using chemical etching in KOH, the polarity of GaN films grown on SiC/Si and Si substrates was determined.
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Chichibu, S. F.; Shima, K.; Kojima, K.; Takashima, S.; Edo, M.; Ueno, K.; Ishibashi, S.; Uedono, A.
2018-05-01
Complementary time-resolved photoluminescence and positron annihilation measurements were carried out at room temperature on Mg-doped p-type GaN homoepitaxial films for identifying the origin and estimating the electron capture-cross-section ( σ n ) of the major nonradiative recombination centers (NRCs). To eliminate any influence by threading dislocations, free-standing GaN substrates were used. In Mg-doped p-type GaN, defect complexes composed of a Ga-vacancy (VGa) and multiple N-vacancies (VNs), namely, VGa(VN)2 [or even VGa(VN)3], are identified as the major intrinsic NRCs. Different from the case of 4H-SiC, atomic structures of intrinsic NRCs in p-type and n-type GaN are different: VGaVN divacancies are the major NRCs in n-type GaN. The σ n value approximately the middle of 10-13 cm2 is obtained for VGa(VN)n, which is larger than the hole capture-cross-section (σp = 7 × 10-14 cm2) of VGaVN in n-type GaN. Combined with larger thermal velocity of an electron, minority carrier lifetime in Mg-doped GaN becomes much shorter than that of n-type GaN.
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Welding and joining of single crystals of BCC refractory metals
International Nuclear Information System (INIS)
Hiraoka, Yutaka; Fujii, Tadayuki
1989-01-01
Welding and joining is one of key technologies for the wider utilizations of a material. In the present work, the applicability of welding and joining for a single crystal of BCC refractory metal was investigated. Electron-beam welding and tungsten-inert-gas welding by a melt-run technique, and high-temperature brazing by using brazing metals such as Mo-40%Ru alloy, vanadium or platinum were conducted for molybdenum single crystal which had been prepared by means of secondary recrystallization. 12 refs.,12 figs., 2 tabs. (Author)
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Synthesis of p-type GaN nanowires.
Kim, Sung Wook; Park, Youn Ho; Kim, Ilsoo; Park, Tae-Eon; Kwon, Byoung Wook; Choi, Won Kook; Choi, Heon-Jin
2013-09-21
GaN has been utilized in optoelectronics for two decades. However, p-type doping still remains crucial for realization of high performance GaN optoelectronics. Though Mg has been used as a p-dopant, its efficiency is low due to the formation of Mg-H complexes and/or structural defects in the course of doping. As a potential alternative p-type dopant, Cu has been recognized as an acceptor impurity for GaN. Herein, we report the fabrication of Cu-doped GaN nanowires (Cu:GaN NWs) and their p-type characteristics. The NWs were grown vertically via a vapor-liquid-solid (VLS) mechanism using a Au/Ni catalyst. Electrical characterization using a nanowire-field effect transistor (NW-FET) showed that the NWs exhibited n-type characteristics. However, with further annealing, the NWs showed p-type characteristics. A homo-junction structure (consisting of annealed Cu:GaN NW/n-type GaN thin film) exhibited p-n junction characteristics. A hybrid organic light emitting diode (OLED) employing the annealed Cu:GaN NWs as a hole injection layer (HIL) also demonstrated current injected luminescence. These results suggest that Cu can be used as a p-type dopant for GaN NWs.
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Elastic neutron diffraction study of transforming and non-transforming single crystal ZrV2
International Nuclear Information System (INIS)
Bostock, J.; Wong, M.; MacVicar, M.L.A.; Levinson, M.
1980-01-01
The mosaic spread of single crystal ZrV 2 is unusually narrow, approx. 1' from room temperature to 130K. For non-transforming perfect single crystal the mosaic gradually increases to approx. 1.86' at 4.2K; for transforming, twinned single crystal the room temperature mosaic is maintained to 110K, then increases to 2.76' at 94K when the crystal transforms to a mixed cubic (30%) and rhombohedral state (70%). The onset of the electronic instability (approx. 100K) is accompanied by an increase in diffuse scattering background which, for the twinned crystal, peaks at the structural transformation. The electronic instability coupled to the localized lattice stress appears to be the driving mechanism for the transformation
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Self-reporting inhibitors: single crystallization process to get two optically pure enantiomers.
Wan, Xinhua; Ye, Xichong; Cui, Jiaxi; Li, Bowen; Li, Na; Zhang, Jie
2018-05-22
Collection of two optically pure enantiomers in a single crystallization process can significantly increase the chiral separation efficiency but it's hard to realize nowadays. Herein we describe, for the first time, a self-reporting strategy for visualizing the crystallization process by a kind of dyed self-assembled inhibitors made from the copolymers with tri(ethylene glycol)-grafting polymethylsiloxane as main chains and poly(N6-methacryloyl-L-lysine) as side chains. When applied with seeds together for the fractional crystallization of conglomerates, the inhibitors can label the formation of the secondary crystals and guide us to completely separate the crystallization process of two enantiomers with colorless crystals as the first product and red crystals as the secondary product. This method leads to high optical purity of D/L-Asn·H2O (99.9 ee% for D-crystals and 99.5 ee% for L-crystals) in a single crystallization process. Moreover, it requires low feeding amount of additives and shows excellent recyclability. We foresee its great potential in developing novel chiral separation methods that can be used in different scales. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Single crystal magnetisation of UFe10Mo2
International Nuclear Information System (INIS)
Estrela, P.; Godinho, M.; Spirlet, J.C.
1997-01-01
Magnetisation measurements have been performed for different directions on aligned UFe 10 Mo 2 single crystals. The results confirm a basal plane anisotropy and suggest an important magnetic contribution from the uranium sublattice. (orig.)
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Study of Cs adsorption on (100) surface of [001]-oriented GaN nanowires: A first principle research
Energy Technology Data Exchange (ETDEWEB)
Xia, Sihao [Department of Optoelectronic Technology, School of Electronic and Optical Engineering, Nanjing University of Science and Technology Nanjing, 210094 (China); Liu, Lei, E-mail: liu1133_cn@sina.com.cn [Department of Optoelectronic Technology, School of Electronic and Optical Engineering, Nanjing University of Science and Technology Nanjing, 210094 (China); Kong, Yike [Department of Optoelectronic Technology, School of Electronic and Optical Engineering, Nanjing University of Science and Technology Nanjing, 210094 (China); Wang, Honggang; Wang, Meishan [School of Information and Electrical Engineering, Ludong University, Yantai 264025 (China)
2016-11-30
Highlights: • B{sub N} is the most stable adsorption site. • Work function is reduced after Cs adsorption. • Surface atomic structures are reconstructed. • Surface states near fermi level is contributed to the hybridization of Cs 5s state with Ga 4p and N 2p state. • NEA surface is demonstrated after Cs adsorption on GaN nanowire surface. - Abstract: Based on first-principle study, the adsorption mechanism of Cs on (100) crystal plane of GaN nanowire surface with coverage of 1/12 monolayer is explored. It is discovered that the most stable adsorption site is B{sub N} because of its lowest adsorption energy. The work function of GaN nanowire surface is reduced by 1.69 eV and will be further reduced with increasing Cs adsorption, which promotes the development of negative electron affinity (NEA) state of the materials. Furthermore, Cs adatom will make a great influence on the surface atomic structure, oppositely, little influence on the center atomic structure. There appears a dipole moment valued −6.93 Debye on the nanowire surface contributed to the formation the heterojunction on the surface, which is beneficial to the photoelectrons liberation. After Cs adsorption, the valence band and conduction band both move to lower energy side. The surface states mainly result from the hybridization of Cs 5s state with Ga 4p state and N 2p state. This study can help us to further experiment on the Cs adsorption processing on GaN nanowire and improve the photoemission performance of GaN nanowire devices.
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Study of Cs adsorption on (100) surface of [001]-oriented GaN nanowires: A first principle research
International Nuclear Information System (INIS)
Xia, Sihao; Liu, Lei; Kong, Yike; Wang, Honggang; Wang, Meishan
2016-01-01
Highlights: • B N is the most stable adsorption site. • Work function is reduced after Cs adsorption. • Surface atomic structures are reconstructed. • Surface states near fermi level is contributed to the hybridization of Cs 5s state with Ga 4p and N 2p state. • NEA surface is demonstrated after Cs adsorption on GaN nanowire surface. - Abstract: Based on first-principle study, the adsorption mechanism of Cs on (100) crystal plane of GaN nanowire surface with coverage of 1/12 monolayer is explored. It is discovered that the most stable adsorption site is B N because of its lowest adsorption energy. The work function of GaN nanowire surface is reduced by 1.69 eV and will be further reduced with increasing Cs adsorption, which promotes the development of negative electron affinity (NEA) state of the materials. Furthermore, Cs adatom will make a great influence on the surface atomic structure, oppositely, little influence on the center atomic structure. There appears a dipole moment valued −6.93 Debye on the nanowire surface contributed to the formation the heterojunction on the surface, which is beneficial to the photoelectrons liberation. After Cs adsorption, the valence band and conduction band both move to lower energy side. The surface states mainly result from the hybridization of Cs 5s state with Ga 4p state and N 2p state. This study can help us to further experiment on the Cs adsorption processing on GaN nanowire and improve the photoemission performance of GaN nanowire devices.
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Solid-melt interface structure and growth of Cu alloy single crystals
International Nuclear Information System (INIS)
Tomimitsu, Hiroshi; Kamada, Kohji.
1983-01-01
Crystal-melt interface behavior during the growth of Cu-base solid solutions by the Bridgman method is discussed on the basis of experimental evidence obtained by neutron diffraction topography. Advantages of neutron diffraction topography for the characterization of large single crystals, such as dealt with in this paper, are emphasized. Evidence was odserved of extremely regular crystal growth along directions, irrespective of the macroscopic growth direction. This contrasts with the previously believed (110) normal growth which is a conclusion of growth theory based on molecular kinetics at the solid-melt interface. In consequence, we believe that the kinetics at the interface is a minor factor in the meltgrowth of metal single crystals. Revised melt-growth theory should include both the growth and the formation of the regular structure as evidenced by neutron diffraction topography. (author)
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Patterning solution-processed organic single-crystal transistors with high device performance
Directory of Open Access Journals (Sweden)
Yun Li
2011-06-01
Full Text Available We report on the patterning of organic single-crystal transistors with high device performance fabricated via a solution process under ambient conditions. The semiconductor was patterned on substrates via surface selective deposition. Subsequently, solvent-vapor annealing was performed to reorganize the semiconductor into single crystals. The transistors exhibited field-effect mobility (μFET of up to 3.5 cm2/V s. Good reliability under bias-stress conditions indicates low density of intrinsic defects in crystals and low density of traps at the active interfaces. Furthermore, the Y function method clearly suggests that the variation of μFET of organic crystal transistors was caused by contact resistance. Further improvement of the device with higher μFET with smaller variation can be expected when lower and more uniform contact resistance is achieved.
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Lattice effects in YVO3 single crystal
Marquina, C; Sikora, M; Ibarra, MR; Nugroho, AA; Palstra, TTM
In this paper we report on the lattice effects in the Mott insulator yttrium orthovanadate (YVO3). Linear thermal expansion and magnetostriction experiments have been performed on a single crystal, in the temperature range from 5 K to room temperature. The YVO3 orders antiferromagnetically at T-N =
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Dynamic Actuation of Single-Crystal Diamond Nanobeams
Sohn, Young-Ik; Burek, Michael J.; Kara, Vural; Kearns, Ryan; Lončar, Marko
2014-01-01
We show the dielectrophoretic actuation of single-crystal diamond nanomechanical devices. Gradient radio-frequency electromagnetic forces are used to achieve actuation of both cantilever and doubly clamped beam structures, with operation frequencies ranging from a few MHz to ~50MHz. Frequency tuning and parametric actuation are also studied.
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Method for manufacturing a single crystal nanowire
van den Berg, Albert; Bomer, Johan G.; Carlen, Edwin; Chen, S.; Kraaijenhagen, Roderik Adriaan; Pinedo, Herbert Michael
2013-01-01
A method for manufacturing a single crystal nano-structure is provided comprising the steps of providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing
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Method for manufacturing a single crystal nanowire
van den Berg, Albert; Bomer, Johan G.; Carlen, Edwin; Chen, S.; Kraaijenhagen, R.A.; Pinedo, Herbert Michael
2010-01-01
A method for manufacturing a single crystal nano-structure is provided comprising the steps of providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing
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International Nuclear Information System (INIS)
Gong, Maogao; Xiang, Weidong; Liang, Xiaojuan; Zhong, Jiasong; Chen, Daqin; Huang, Jun; Gu, Guorui; Yang, Cheng; Xiang, Run
2015-01-01
Highlights: • We report preparation of transparent Ce,Tb:YAG single crystal by Czochralski method. • The effect of annealing on Ce,Tb:YAG single crystal had been investigated. • The Ce,Tb:YAG single crystal after annealing exhibited better optical performance. • The Ce,Tb:YAG single crystal could be used as an ideal candidate for WLED. - Abstract: We report the preparation of transparent Ce and Tb co-doped Y 3 Al 5 O 12 single crystal by the Czochralski method. The characterization of the resulting single crystal was accomplished by using X-ray powder diffractometer, scanning electron microscopy and energy dispersive X-ray spectroscopy. Absorption peak of the single crystal at about 460 nm has been obtained from ultraviolet–visible absorption spectrometer and their intensity is changed with different annealing condition. Its optical properties also have been investigated using fluorescence spectrometer. What’s more, its photoelectric parameters were studied by LED fast spectrometer. The constructed single crystal based white-light-emitting diode exhibits a high luminous efficiency of 140.89 lm/W, and a correlated color temperature of 4176 K as well as a color rendering index of 56.7, which reveal the prominent feasibility of the present single crystal material in white-light-emitting diode application
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Energy Technology Data Exchange (ETDEWEB)
Gong, Maogao [College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035 (China); Xiang, Weidong, E-mail: xiangweidong001@126.com [College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035 (China); Liang, Xiaojuan [College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035 (China); Zhong, Jiasong; Chen, Daqin [College of Materials & Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Huang, Jun; Gu, Guorui; Yang, Cheng; Xiang, Run [College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035 (China)
2015-08-05
Highlights: • We report preparation of transparent Ce,Tb:YAG single crystal by Czochralski method. • The effect of annealing on Ce,Tb:YAG single crystal had been investigated. • The Ce,Tb:YAG single crystal after annealing exhibited better optical performance. • The Ce,Tb:YAG single crystal could be used as an ideal candidate for WLED. - Abstract: We report the preparation of transparent Ce and Tb co-doped Y{sub 3}Al{sub 5}O{sub 12} single crystal by the Czochralski method. The characterization of the resulting single crystal was accomplished by using X-ray powder diffractometer, scanning electron microscopy and energy dispersive X-ray spectroscopy. Absorption peak of the single crystal at about 460 nm has been obtained from ultraviolet–visible absorption spectrometer and their intensity is changed with different annealing condition. Its optical properties also have been investigated using fluorescence spectrometer. What’s more, its photoelectric parameters were studied by LED fast spectrometer. The constructed single crystal based white-light-emitting diode exhibits a high luminous efficiency of 140.89 lm/W, and a correlated color temperature of 4176 K as well as a color rendering index of 56.7, which reveal the prominent feasibility of the present single crystal material in white-light-emitting diode application.
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Far-field coupling in nanobeam photonic crystal cavities
Energy Technology Data Exchange (ETDEWEB)
Rousseau, Ian, E-mail: ian.rousseau@epfl.ch; Sánchez-Arribas, Irene; Carlin, Jean-François; Butté, Raphaël; Grandjean, Nicolas [Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)
2016-05-16
We optimized the far-field emission pattern of one-dimensional photonic crystal nanobeams by modulating the nanobeam width, forming a sidewall Bragg cross-grating far-field coupler. By setting the period of the cross-grating to twice the photonic crystal period, we showed using three-dimensional finite-difference time-domain simulations that the intensity extracted to the far-field could be improved by more than three orders of magnitude compared to the unmodified ideal cavity geometry. We then experimentally studied the evolution of the quality factor and far-field intensity as a function of cross-grating coupler amplitude. High quality factor (>4000) blue (λ = 455 nm) nanobeam photonic crystals were fabricated out of GaN thin films on silicon incorporating a single InGaN quantum well gain medium. Micro-photoluminescence spectroscopy of sets of twelve identical nanobeams revealed a nine-fold average increase in integrated far-field emission intensity and no change in average quality factor for the optimized structure compared to the unmodulated reference. These results are useful for research environments and future nanophotonic light-emitting applications where vertical in- and out-coupling of light to nanocavities is required.
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Structural and optical properties of WTe2 single crystals synthesized by DVT technique
Dixit, Vijay; Vyas, Chirag; Pathak, V. M.; Soalanki, G. K.; Patel, K. D.
2018-05-01
Layered transition metal di-chalcogenide (LTMDCs) crystals have attracted much attention due to their potential in optoelectronic device applications recently due to realization of their monolayer based structures. In the present investigation we report growth of WTe2 single crystals by direct vapor transport (DVT) technique. These crystals are then characterized by energy dispersive analysis of x-rays (EDAX) to study stoichiometric composition after growth. The structural properties are studied by x-ray diffraction (XRD) and selected area electron diffraction (SAED) is used to confirm orthorhombic structure of grown WTe2 crystal. Surface morphological properties of the crystals are also studied by scanning electron microscope (SEM). The optical properties of the grown crystals are studied by UV-Visible spectroscopy which gives direct band gap of 1.44 eV for grown WTe2 single crystals.
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Single-crystal neutron diffraction at the Australian Replacement Research Reactor
International Nuclear Information System (INIS)
Klooster, W.T.
2001-01-01
The purpose of the workshop was to: identify the future needs and opportunities for single-crystal neutron diffraction, and specify instrument requirements. important number of experiments. The conclusion of the workshop deliberation was that Australia has a diverse community of users of single-crystal neutron diffraction. A (quasi)-Laue image-plate diffractometer allows the fastest throughput by far, but would exclude an important number of experiments. Most of these could be covered by the additional possibility to locate the image-plate detector on a monochromatic beam. Therefore it was recommend both a white thermal beam and a monochromatic beam (λ= 1 to 2.4 Angstroms) for an image-plate detector. At little additional cost the existing 2TanA instrument could be located semi-permanently on the same monochromatic beam, thus offering three quite different types of single-crystal instruments. Small improvements could be made to the 2TanA instrument to cater for the remaining experiments not suited to an image-plate diffractometer: exchange of the Eulerian cradle for an automated tilt goniometer for extremely bulky sample environment (cryomagnets, large pressure cells), optional larger area detector, analyser crystal. It was recommended that an Instrument Advisory Team will be assembled, and will help in specifying, designing and commissioning the instrument
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International Nuclear Information System (INIS)
Vinnik, D.A.; Zherebtsov, D.A.; Mashkovtseva, L.S.; Nemrava, S.; Bischoff, M.; Perov, N.S.; Semisalova, A.S.; Krivtsov, I.V.; Isaenko, L.I.; Mikhailov, G.G.; Niewa, R.
2014-01-01
Highlights: • Growth of large Al-substituted crystals BaFe 12−x Al x O 19. • Al-content controllable by flux composition. • Crystallographic site preference of Al unraveled. • Magnetic characterization depending on Al-content. - Abstract: Large single crystals of aluminum-substituted M-type barium hexaferrite BaFe 12−x Al x O 19 were obtained from carbonate flux. The Al content in the crystals can be controlled via the Al content of the flux up to x = 1.1 according to single crystal X-ray structure refinements. Al shows a distinct preference to substitute Fe on crystallographic sites with high coordination numbers by oxygen atoms, whereas no significant amounts of Al can be found on a tetrahedrally coordinated site. An increasing amount of the aluminum dopant results in a monotonous reduction of the Curie temperature from 440 to 415 °C and the saturation magnetization at room temperature from 68 to 57 emu/g for single crystal and from 61 to 53 emu/g for powder samples
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Ueda, Hiroyuki; Takeuchi, Keita; Kikuchi, Akihiko
2018-04-01
We report an organic single crystal growth technique, which uses a nonvolatile liquid thin film as a crystal growth field and supplies fine droplets containing solute from the surface of the liquid thin film uniformly and continuously by electrospray deposition. Here, we investigated the relationships between the solute concentration of the supplied solution and the morphology and size of precipitated crystals for four types of fluorescent organic low molecule material [tris(8-hydroxyquinoline)aluminum (Alq3), 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD), N,N‧-bis(3-methylphenyl)-N,N‧-diphenylbenzidine (TPD), and N,N-bis(naphthalene-1-yl)-N,N-diphenyl-benzidine (NPB)] using an ionic liquid as the nonvolatile liquid. As the concentration of the supplied solution decreased, the morphology of precipitated crystals changed from dendritic or leaf shape to platelike one. At the solution concentration of 0.1 mg/ml, relatively large platelike single crystals with a diagonal length of over 100 µm were obtained for all types of material. In the experiment using ionic liquid and dioctyl sebacate as nonvolatile liquids, it was confirmed that there is a clear positive correlation between the maximum volume of the precipitated single crystal and the solubility of solute under the same solution supply conditions.
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Single-crystal diffraction instrument TriCS at SINQ
Schefer, J.; Könnecke, M.; Murasik, A.; Czopnik, A.; Strässle, Th; Keller, P.; Schlumpf, N.
2000-03-01
The single-crystal diffractometer TriCS at the Swiss Continuous Spallation Source (SINQ) is presently in the commissioning phase. A two-dimensional wire detector produced by EMBL was delivered in March 1999. The instrument is presently tested with a single detector. First measurements on magnetic structures have been performed. The instrument is remotely controlled using JAVA-based software and a UNIX DEC-α host computer.
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Multilayer porous structures of HVPE and MOCVD grown GaN for photonic applications
Braniste, T.; Ciers, Joachim; Monaico, Ed.; Martin, D.; Carlin, J.-F.; Ursaki, V. V.; Sergentu, V. V.; Tiginyanu, I. M.; Grandjean, N.
2017-02-01
In this paper we report on a comparative study of electrochemical processes for the preparation of multilayer porous structures in hydride vapor phase epitaxy (HVPE) and metal organic chemical vapor phase deposition (MOCVD) grown GaN. It was found that in HVPE-grown GaN, multilayer porous structures are obtained due to self-organization processes leading to a fine modulation of doping during the crystal growth. However, these processes are not totally under control. Multilayer porous structures with a controlled design have been produced by optimizing the technological process of electrochemical etching in MOCVD-grown samples, consisting of five pairs of thin layers with alternating-doping profiles. The samples have been characterized by SEM imaging, photoluminescence spectroscopy, and micro-reflectivity measurements, accompanied by transfer matrix analysis and simulations by a method developed for the calculation of optical reflection spectra. We demonstrate the applicability of the produced structures for the design of Bragg reflectors.
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Fergusonite-type CeNbO{sub 4+δ}: Single crystal growth, symmetry revision and conductivity
Energy Technology Data Exchange (ETDEWEB)
Bayliss, Ryan D. [Department of Materials, Imperial College London, Prince Consort Road, London, SW7 2BP (United Kingdom); Pramana, Stevin S.; An, Tao; Wei, Fengxia; Kloc, Christian L. [School of Materials Science and Engineering, 50 Nanyang Avenue, Nanyang Technological University, 639798 (Singapore); White, Andrew J.P. [Chemical Crystallography Laboratory, Department of Chemistry, Imperial College London, Exhibition Road, London, SW7 2AZ (United Kingdom); Skinner, Stephen J. [Department of Materials, Imperial College London, Prince Consort Road, London, SW7 2BP (United Kingdom); White, Timothy J. [School of Materials Science and Engineering, 50 Nanyang Avenue, Nanyang Technological University, 639798 (Singapore); Baikie, Tom, E-mail: tbaikie@ntu.edu.sg [School of Materials Science and Engineering, 50 Nanyang Avenue, Nanyang Technological University, 639798 (Singapore)
2013-08-15
Large fergusonite-type (ABO{sub 4}, A=Ce, B=Nb) oxide crystals, a prototype electrolyte composition for solid oxide fuel cells (SOFC), were prepared for the first time in a floating zone mirror furnace under air or argon atmospheres. While CeNbO{sub 4} grown in air contained CeNbO{sub 4.08} as a minor impurity that compromised structural analysis, the argon atmosphere yielded a single phase crystal of monoclinic CeNbO{sub 4}, as confirmed by selected area electron diffraction, powder and single crystal X-ray diffraction. The structure was determined in the standard space group setting C12/c1 (No. 15), rather than the commonly adopted I12/a1. AC impedance spectroscopy conducted under argon found that stoichiometric CeNbO{sub 4} single crystals showed lower conductivity compared to CeNbO{sub 4+δ} confirming interstitial oxygen can penetrate through fergusonite and is responsible for the higher conductivity associated with these oxides. - Graphical abstract: Large fergusonite-type CeNbO{sub 4} crystals were prepared for the first time in a floating zone mirror furnace. Crystal growth in an argon atmosphere yielded a single phase monoclinic CeNbO4, as confirmed by selected area electron diffraction, powder and single crystal X-ray diffraction. The structure was determined in the standard space group setting C12/c1 (No. 15), rather than the commonly adopted I12/a1. AC impedance spectroscopy found CeNbO{sub 4} single crystals showed lower conductivity compared to CeNbO{sub 4+δ} confirming interstitial oxygen can penetrate through fergusonite and is responsible for the higher conductivity associated with these oxides. Highlights: • Preparation of single crystals of CeNbO{sub 4} using a floating zone mirror furnace. • Correction to the crystal symmetry of the monoclinic form of CeNbO{sub 4}. • Report the conductivity of a single crystal of CeNbO{sub 4}.
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Saidaminov, Makhsud I.; Abdelhady, Ahmed L.; Banavoth, Murali; Alarousu, Erkki; Burlakov, Victor M.; Peng, Wei; Dursun, Ibrahim; Wang, Lingfei; He, Yao; Maculan, Giacomo; Goriely, Alain; Wu, Tao; Mohammed, Omar F.; Bakr, Osman
2015-01-01
Single crystals of methylammonium lead trihalide perovskites (MAPbX3; MA=CH3NH3+, X=Br− or I−) have shown remarkably low trap density and charge transport properties; however, growth of such high-quality semiconductors is a time-consuming process
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Interaction of GaN epitaxial layers with atomic hydrogen
Energy Technology Data Exchange (ETDEWEB)
Losurdo, M.; Giangregorio, M.M.; Capezzuto, P.; Bruno, G.; Namkoong, G.; Doolittle, W.A.; Brown, A.S
2004-08-15
GaN surface passivation processes are still under development and among others hydrogen treatments are investigated. In this study, we use non-destructive optical and electrical probes such as spectroscopic ellipsometry (SE) and surface potential Kelvin probe microscopy (SP-KPM) in conjunction with non-contact atomic force microscopy (AFM) for the study of the different reactivity of Ga-polar and N-polar GaN epitaxial layers with atomic hydrogen. The GaN epitaxial layers are grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates, and GaN and AlN buffer layers are used to grow N-polar and Ga-polar films, respectively. The atomic hydrogen is produced by a remote rf (13.56 MHz) H{sub 2} plasma in order to rule out any ion bombardment of the GaN surface and make the interaction chemical. It is found that the interaction of GaN surfaces with atomic hydrogen depends on polarity, with N-polar GaN exhibiting greater reactivity. Furthermore, it is found that atomic hydrogen is effective in the passivation of grain boundaries and surface defects states.
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Interaction of GaN epitaxial layers with atomic hydrogen
International Nuclear Information System (INIS)
Losurdo, M.; Giangregorio, M.M.; Capezzuto, P.; Bruno, G.; Namkoong, G.; Doolittle, W.A.; Brown, A.S.
2004-01-01
GaN surface passivation processes are still under development and among others hydrogen treatments are investigated. In this study, we use non-destructive optical and electrical probes such as spectroscopic ellipsometry (SE) and surface potential Kelvin probe microscopy (SP-KPM) in conjunction with non-contact atomic force microscopy (AFM) for the study of the different reactivity of Ga-polar and N-polar GaN epitaxial layers with atomic hydrogen. The GaN epitaxial layers are grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates, and GaN and AlN buffer layers are used to grow N-polar and Ga-polar films, respectively. The atomic hydrogen is produced by a remote rf (13.56 MHz) H 2 plasma in order to rule out any ion bombardment of the GaN surface and make the interaction chemical. It is found that the interaction of GaN surfaces with atomic hydrogen depends on polarity, with N-polar GaN exhibiting greater reactivity. Furthermore, it is found that atomic hydrogen is effective in the passivation of grain boundaries and surface defects states
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Synthesis and Single Crystal X-Ray Structure Determination of 3,3',5 ...
African Journals Online (AJOL)
Single crystal structure determination at 100 K revealed needle-like crystals in an orthorhombic crystal system. The asymmetric unit of the cell consists of an isolated chloride ion, one half of a tetrahedral [MnCl4]2- anion, a [H2Me4bpz]2+ dication and one half of a molecule of water. Keywords: Crystal Engineering, Hydrogen ...
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Characterisation of irradiation-induced defects in ZnO single crystals
International Nuclear Information System (INIS)
Prochazka, I; Cizek, J; Lukac, F; Melikhova, O; Valenta, J; Havranek, V; Anwand, W; Skuratov, V A; Strukova, T S
2016-01-01
Positron annihilation spectroscopy (PAS) combined with optical methods was employed for characterisation of defects in the hydrothermally grown ZnO single crystals irradiated by 167 MeV Xe 26+ ions to fluences ranged from 3×10 12 to 1×10 14 cm -2 . The positron lifetime (LT), Doppler broadening as well as slow-positron implantation spectroscopy (SPIS) techniques were involved. The ab-initio theoretical calculations were utilised for interpretation of LT results. The optical transmission and photoluminescence measurements were conducted, too. The virgin ZnO crystal exhibited a single component LT spectrum with a lifetime of 182 ps which is attributed to saturated positron trapping in Zn vacancies associated with hydrogen atoms unintentionally introduced into the crystal during the crystal growth. The Xe ion irradiated ZnO crystals have shown an additional component with a longer lifetime of ≈ 360 ps which comes from irradiation-induced larger defects equivalent in size to clusters of ≈10 to 12 vacancies. The concentrations of these clusters were estimated on the basis of combined LT and SPIS data. The PAS data were correlated with irradiation induced changes seen in the optical spectroscopy experiments. (paper)
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Characterisation of irradiation-induced defects in ZnO single crystals
Prochazka, I.; Cizek, J.; Lukac, F.; Melikhova, O.; Valenta, J.; Havranek, V.; Anwand, W.; Skuratov, V. A.; Strukova, T. S.
2016-01-01
Positron annihilation spectroscopy (PAS) combined with optical methods was employed for characterisation of defects in the hydrothermally grown ZnO single crystals irradiated by 167 MeV Xe26+ ions to fluences ranged from 3×1012 to 1×1014 cm-2. The positron lifetime (LT), Doppler broadening as well as slow-positron implantation spectroscopy (SPIS) techniques were involved. The ab-initio theoretical calculations were utilised for interpretation of LT results. The optical transmission and photoluminescence measurements were conducted, too. The virgin ZnO crystal exhibited a single component LT spectrum with a lifetime of 182 ps which is attributed to saturated positron trapping in Zn vacancies associated with hydrogen atoms unintentionally introduced into the crystal during the crystal growth. The Xe ion irradiated ZnO crystals have shown an additional component with a longer lifetime of ≈ 360 ps which comes from irradiation-induced larger defects equivalent in size to clusters of ≈10 to 12 vacancies. The concentrations of these clusters were estimated on the basis of combined LT and SPIS data. The PAS data were correlated with irradiation induced changes seen in the optical spectroscopy experiments.
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Crystal growth and mechanical hardness of In{sub 2}Se{sub 2.7}Sb{sub 0.3} single crystal
Energy Technology Data Exchange (ETDEWEB)
Patel, Piyush, E-mail: piyush-patel130@yahoo.com; Vyas, S. M., E-mail: s-m-vyas-gu@hotmail.com; Patel, Vimal; Pavagadhi, Himanshu [Department of Physics, School of Science, Gujarat University, Ahmedabad, Gujarat, India-380009 (India); Solanki, Mitesh [panditdindayal Petroleum University, Gandhinagar. Gujarat (India); Jani, Maunik P. [BITS Edu Campus, Varnama, Vadodara, Gujarat (India)
2015-08-28
The III-VI compound semiconductors is important for the fabrication of ionizing radiation detectors, solid-state electrodes, and photosensitive heterostructures, solar cell and ionic batteries. In this paper, In{sub 2}Se{sub 2.7} Sb{sub 0.3} single crystals were grown by the Bridgman method with temperature gradient of 60 °C/cm and the growth velocity 0.5cm/hr. The as-grown crystals were examined under the optical microscope for surface study, a various growth features observed on top free surface of the single crystal which is predominant of layers growth mechanism. The lattice parameters of as-grown crystal was determined by the XRD analysis. A Vickers’ projection microscope were used for the study of microhardness on the as-cleaved, cold-worked and annealed samples of the crystals, the results were discussed, and reported in detail.
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Neutron forward diffraction by single crystal prisms
Indian Academy of Sciences (India)
We have derived analytic expressions for the deflection as well as transmitted fraction of monochromatic neutrons forward diffracted by a single crystal prism. In the vicinity of a Bragg reflection, the neutron deflection deviates sharply from that for an amorphous prism, exhibiting three orders of magnitude greater sensitivity to ...
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Energy Technology Data Exchange (ETDEWEB)
Umeda, Minoru, E-mail: mumeda@vos.nagaokaut.ac.jp [Nagaoka University of Technology, Kamitomioka, Nagaoka, Niigata 940-2188 (Japan); Katagiri, Mitsuhiko; Shironita, Sayoko [Nagaoka University of Technology, Kamitomioka, Nagaoka, Niigata 940-2188 (Japan); Nagayama, Norio [Nagaoka University of Technology, Kamitomioka, Nagaoka, Niigata 940-2188 (Japan); Ricoh Company, Ltd., Nishisawada, Numazu, Shizuoka 410-0007 (Japan)
2016-12-01
Highlights: • A hole transport molecule was investigated based on its electrochemical redox characteristics. • The solubility and supersolubility curves of the molecule were measured in order to prepare a large crystal. • The polarization micrograph and XRD results revealed that a single crystal was obtained. • An anisotropic surface conduction, in which the long-axis direction exceeds that of the amorphous layer, was observed. • The anisotropic surface conduction was well explained by the molecular stacked structure. - Abstract: This paper reports the anisotropic hole transport at the triphenylamine-derivative single crystal surface prepared by a solution method. Triphenylamine derivatives are commonly used in a hole-transport material for organic photoconductors of laser-beam printers, in which the materials are used as an amorphous form. For developing organic photovoltaics using the photoconductor’s technology, preparation of a single crystal seems to be a specific way by realizing the high mobility of an organic semiconductor. In this study, a single crystal of 4-(2,2-diphenylethenyl)-N,N-bis(4-methylphenyl)-benzenamine (TPA) was prepared and its anisotropic hole-transport property measured. First, the hole-transport property of the TPA was investigated based on its chemical structure and electrochemical redox characteristics. Next, a large-scale single crystal formation at a high rate was developed by employing a solution method based on its solubility and supersolubility curves. The grown TPA was found to be a single crystal based on the polarization micrograph observation and crystallographic analysis. For the TPA single crystal, an anisotropic surface conduction was found, which was well explained by its molecular stack structure. The measured current in the long-axis direction is one order of magnitude greater than that of amorphous TPA.
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ARM MJO Investigation Experiment on Gan Island (AMIE-Gan) Science Plan
Energy Technology Data Exchange (ETDEWEB)
Long, CL; Del Genio, A; Deng, M; Fu, X; Gustafson, W; Houze, R; Jakob, C; Jensen, M; Johnson, R; Liu, X; Luke, E; May, P; McFarlane, S; Minnis, P; Schumacher, C; Vogelmann, A; Wang, Y; Webster, P; Xie, S; Zhang, C
2011-04-11
The overarching campaign, which includes the ARM Mobile Facility 2 (AMF2) deployment in conjunction with the Dynamics of the Madden-Julian Oscillation (DYNAMO) and the Cooperative Indian Ocean experiment on intraseasonal variability in the Year 2011 (CINDY2011) campaigns, is designed to test several current hypotheses regarding the mechanisms responsible for Madden-Julian Oscillation (MJO) initiation and propagation in the Indian Ocean area. The synergy between the proposed AMF2 deployment with DYNAMO/CINDY2011, and the corresponding funded experiment on Manus, combine for an overarching ARM MJO Investigation Experiment (AMIE) with two components: AMF2 on Gan Island in the Indian Ocean (AMIE-Gan), where the MJO initiates and starts its eastward propagation; and the ARM Manus site (AMIE-Manus), which is in the general area where the MJO usually starts to weaken in climate models. AMIE-Gan will provide measurements of particular interest to Atmospheric System Research (ASR) researchers relevant to improving the representation of MJO initiation in climate models. The framework of DYNAMO/CINDY2011 includes two proposed island-based sites and two ship-based locations forming a square pattern with sonde profiles and scanning precipitation and cloud radars at both island and ship sites. These data will be used to produce a Variational Analysis data set coinciding with the one produced for AMIE-Manus. The synergy between AMIE-Manus and AMIE-Gan will allow studies of the initiation, propagation, and evolution of the convective cloud population within the framework of the MJO. As with AMIE-Manus, AMIE-Gan/DYNAMO also includes a significant modeling component geared toward improving the representation of MJO initiation and propagation in climate and forecast models. This campaign involves the deployment of the second, marine-capable, AMF; all of the included measurement systems; and especially the scanning and vertically pointing radars. The campaign will include sonde
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Plastic deformation of Ni3Nb single crystals
International Nuclear Information System (INIS)
Hagihara, Kouji; Nakano, Takayoshi; Umakoshi, Yukichi
1999-01-01
Temperature dependence of yield stress and operative slip system in Ni 3 Nb single crystals with the D0 a structure was investigated in comparison with that in an analogous L1 2 structure. Compression tests were performed at temperatures between 20 C and 1,200 C for specimens with loading axes perpendicular to (110), (331) and (270). (010)[100] slip was operative for three orientations, while (010)[001] slip for (331) and [211] twin for (270) orientations were observed, depending on deformation temperature. The critical resolved shear stress (CRSS) for the (010)[100] slip anomaly increased with increasing temperature showing a maximum peak between 400 C and 800 C depending on crystal orientation. The CRSS showed orientation dependence and no significant strain rate dependence in the temperature range for anomalous strengthening. The [100] dislocations with a screw character were aligned on the straight when the anomalous strengthening occurred. The anomalous strengthening mechanism for (010)[100] slip in Ni 3 Nb single crystals is discussed on the basis of a cross slip model which has been widely accepted for some L1 2 -type compounds
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International Nuclear Information System (INIS)
Hauk, V.; Kockelmann, H.
1979-01-01
Methods of calculation are developed for determination of single crystal elastic compliance or stiffness constants of cubic and hexagonal materials from mechanical and X-ray elastic constants of polycrystals. The calculations are applied to pure, cubic iron and hexagonal WC. There are no single crystal constants in the literature for WC, because no single crystals suitable for measurement are available. (orig.) [de
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International Nuclear Information System (INIS)
Kobayashi, Nobuhiko P.; Lohn, Andrew; Onishi, Takehiro; Mathai, Sagi; Li, Xuema; Straznicky, Joseph; Wang, Shih-Yuan; Williams, R.S.; Logeeswaran, V.J.; Islam, M.S.
2009-01-01
A new route to grow an ensemble of indium phosphide single-crystal semiconductor nanowires is described. Unlike conventional epitaxial growth of single-crystal semiconductor films, the proposed route for growing semiconductor nanowires does not require a single-crystal semiconductor substrate. In the proposed route, instead of using single-crystal semiconductor substrates that are characterized by their long-range atomic ordering, a template layer that possesses short-range atomic ordering prepared on a non-single-crystal substrate is employed. On the template layer, epitaxial information associated with its short-range atomic ordering is available within an area that is comparable to that of a nanowire root. Thus the template layer locally provides epitaxial information required for the growth of semiconductor nanowires. In the particular demonstration described in this paper, hydrogenated silicon was used as a template layer for epitaxial growth of indium phosphide nanowires. The indium phosphide nanowires grown on the hydrogenerated silicon template layer were found to be single crystal and optically active. Simple photoconductors and pin-diodes were fabricated and tested with the view towards various optoelectronic device applications where group III-V compound semiconductors are functionally integrated onto non-single-crystal platforms. (orig.)
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Energy Technology Data Exchange (ETDEWEB)
Kobayashi, Nobuhiko P.; Lohn, Andrew; Onishi, Takehiro [University of California, Santa Cruz (United States). Baskin School of Engineering; NASA Ames Research Center, Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, Univ. of California Santa Cruz, Moffett Field, CA (United States); Mathai, Sagi; Li, Xuema; Straznicky, Joseph; Wang, Shih-Yuan; Williams, R.S. [Hewlett-Packard Laboratories, Information and Quantum Systems Laboratory, Palo Alto, CA (United States); Logeeswaran, V.J.; Islam, M.S. [University of California Davis, Electrical and Computer Engineering, Davis, CA (United States)
2009-06-15
A new route to grow an ensemble of indium phosphide single-crystal semiconductor nanowires is described. Unlike conventional epitaxial growth of single-crystal semiconductor films, the proposed route for growing semiconductor nanowires does not require a single-crystal semiconductor substrate. In the proposed route, instead of using single-crystal semiconductor substrates that are characterized by their long-range atomic ordering, a template layer that possesses short-range atomic ordering prepared on a non-single-crystal substrate is employed. On the template layer, epitaxial information associated with its short-range atomic ordering is available within an area that is comparable to that of a nanowire root. Thus the template layer locally provides epitaxial information required for the growth of semiconductor nanowires. In the particular demonstration described in this paper, hydrogenated silicon was used as a template layer for epitaxial growth of indium phosphide nanowires. The indium phosphide nanowires grown on the hydrogenerated silicon template layer were found to be single crystal and optically active. Simple photoconductors and pin-diodes were fabricated and tested with the view towards various optoelectronic device applications where group III-V compound semiconductors are functionally integrated onto non-single-crystal platforms. (orig.)
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Influence of solvents on the habit modification of alpha lactose monohydrate single crystals
Parimaladevi, P.; Srinivasan, K.
2013-02-01
Restricted evaporation of solvent method was adopted for the growth of alpha lactose monohydrate single crystals from different solvents. The crystal habits of grown crystals were analysed. The form of crystallization was confirmed by powder x-ray diffraction analysis. Thermal behaviour of the grown crystals was studied by using differential scanning calorimetry.
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Computational study of GaAs1-xNx and GaN1-yAsy alloys and arsenic impurities in GaN
International Nuclear Information System (INIS)
Laaksonen, K; Komsa, H-P; Arola, E; Rantala, T T; Nieminen, R M
2006-01-01
We have studied the structural and electronic properties of As-rich GaAs 1-x N x and N-rich GaN 1-y As y alloys in a large composition range using first-principles methods. We have systematically investigated the effect of the impurity atom configuration near both GaAs and GaN sides of the concentration range on the total energies, lattice constants and bandgaps. The N (As) atoms, replacing substitutionally As (N) atoms in GaAs (GaN), cause the surrounding Ga atoms to relax inwards (outwards), making the Ga-N (Ga-As) bond length about 15% shorter (longer) than the corresponding Ga-As (Ga-N) bond length in GaAs (GaN). The total energies of the relaxed alloy supercells and the bandgaps experience large fluctuations within different configurations and these fluctuations grow stronger if the impurity concentration is increased. Substituting As atoms with N in GaAs induces modifications near the conduction band minimum, while substituting N atoms with As in GaN modifies the states near the valence band maximum. Both lead to bandgap reduction, which is at first rapid but later slows down. The relative size of the fluctuations is much larger in the case of GaAs 1-x N x alloys. We have also looked into the question of which substitutional site (Ga or N) As occupies in GaN. We find that under Ga-rich conditions arsenic prefers the substitutional N site over the Ga site within a large range of Fermi level values
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Optical properties of GaS:Ho3+ and GaS:Tm3+ single crystals
International Nuclear Information System (INIS)
Jin, Moon-Seog; Kim, Chang-Dae; Kim, Wha-Tek
2004-01-01
GaS:Ho 3+ and GaS:Tm 3+ single crystals were grown by using the chemical transport reaction method. We measured the optical absorption, the infra-red absorption, and the photoluminescence spectra of the single crystals. The direct and the indirect energy band gaps of the single crystals at 13 K were identified. Infra-red absorption peaks at 6 K appeared in the single crystals. Broad emission bands at 6 K were observed at 464 nm and 580 nm for GaS:Ho 3+ and 462 nm and 581 nm for GaS:Tm 3+ . These broad emission bands were identified as originating from donor-acceptor pair recombinations. Sharp emission peak groups were observed near 435 nm, 495 nm, and 660 nm for GaS:Ho 3+ and near 672 nm for GaS:Tm 3+ . These sharp emission peak groups were identified as being due to the electron transitions between the energy levels of Ho 3+ and Tm 3+ . Especially, white photoluminescence was obtained in the GaS:Ho 3+ single crystal.
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Kim, Dong Rip; Lee, Chi Hwan; Cho, In Sun; Jang, Hanmin; Jeon, Min Soo; Zheng, Xiaolin
2017-07-25
An important pathway for cost-effective light energy conversion devices, such as solar cells and light emitting diodes, is to integrate III-V (e.g., GaN) materials on Si substrates. Such integration first necessitates growth of high crystalline III-V materials on Si, which has been the focus of many studies. However, the integration also requires that the final III-V/Si structure has a high light energy conversion efficiency. To accomplish these twin goals, we use single-crystalline microsized Si pillars as a seed layer to first grow faceted Si structures, which are then used for the heteroepitaxial growth of faceted GaN films. These faceted GaN films on Si have high crystallinity, and their threading dislocation density is similar to that of GaN grown on sapphire. In addition, the final faceted GaN/Si structure has great light absorption and extraction characteristics, leading to improved performance for GaN-on-Si light energy conversion devices.
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Determination of carrier diffusion length in GaN
Hafiz, Shopan; Zhang, Fan; Monavarian, Morteza; Avrutin, Vitaliy; Morkoç, Hadis; Özgür, Ümit; Metzner, Sebastian; Bertram, Frank; Christen, Jürgen; Gil, Bernard
2015-01-01
Diffusion lengths of photo-excited carriers along the c-direction were determined from photoluminescence (PL) and cross-sectional cathodoluminescence (CL) measurements in p- and n-type GaN epitaxial layers grown on c-plane sapphire by metal-organic chemical vapor deposition. The investigated samples incorporate a 6 nm thick In0.15Ga0.85N active layer capped with either 500 nm p-GaN or 1500 nm n-GaN. The top GaN layers were etched in steps and PL from the InGaN active region and the underlying layers was monitored as a function of the top GaN thickness upon photo-generation near the surface region by above bandgap excitation. Taking into consideration the absorption in the top GaN layer as well as active and underlying layers, the diffusion lengths at 295 K and at 15 K were measured to be 93 ± 7 nm and 70 ± 7 nm for Mg-doped p-type GaN and 432 ± 30 nm and 316 ± 30 nm for unintentionally doped n-type GaN, respectively, at photogenerated carrier densities of 4.2 × 1018 cm-3 using PL spectroscopy. CL measurements of the unintentionally doped n-type GaN layer at much lower carrier densities of 1017 cm-3 revealed a longer diffusion length of 525 ± 11 nm at 6 K.
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Mechanical and optical nanodevices in single-crystal quartz
Sohn, Young-Ik; Miller, Rachel; Venkataraman, Vivek; Lončar, Marko
2017-12-01
Single-crystal α-quartz, one of the most widely used piezoelectric materials, has enabled a wide range of timing applications. Owing to the fact that an integrated thin-film based quartz platform is not available, most of these applications rely on macroscopic, bulk crystal-based devices. Here, we show that the Faraday cage angled-etching technique can be used to realize nanoscale electromechanical and photonic devices in quartz. Using this approach, we demonstrate quartz nanomechanical cantilevers and ring resonators featuring Qs of 4900 and 8900, respectively.
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Schottky contacts to polar and nonpolar n-type GaN
Energy Technology Data Exchange (ETDEWEB)
Kim, Hogyoung [Hanbat National University, Daejeon (Korea, Republic of); Phark, Soohyon [Max-Planck-Institut fur Mikrostrukturphysik, Halle (Germany); Song, Keunman [Korea Advanced Nano Fab Center, Suwon (Korea, Republic of); Kim, Dongwook [Ewha Woman' s University, Seoul (Korea, Republic of)
2012-01-15
Using the current-voltage measurements, we observed the barrier heights of c-plane GaN in Pt and Au Schottky contacts to be higher than those of a-plane GaN. However, the barrier height of c-plane GaN was lower than that of a-plane GaN in the Ti Schottky contacts. The N/Ga ratio calculated by integrating the X-ray photoelectron spectroscopy (XPS) spectra of Ga 3d and N 1s core levels showed that c-plane GaN induced more Ga vacancies near the interface than a-plane GaN in the Ti Schottky contacts, reducing the effective barrier height through an enhancement of the tunneling probability.
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International Nuclear Information System (INIS)
Vidyasagar, R.; Lin, Y.-T.; Tu, L.-W.
2012-01-01
Graphical abstract: We report here that micro-Raman scattering spectrum for Mn doped GaN thin film has displayed a new peak manifested at 578 cm −1 , by which it is attributed to interior LVM originated by the incorporation of Mn ions in place of Ga sites. Mn doped GaN thin film also showed the typical negative magnetoresistance up to ∼50 K, revealing that the film showed magnetic ordering of spins below 50 K. Display Omitted Highlights: ► GaN and Mn doped GaN single phase wurtzite structures grown by PAMBE. ► The phase purity of the epilayers investigated by HRXRD, HRSEM and EDX. ► The red shift in near band edge emission has been observed using micro-PL. ► A new peak related LVM at 578 cm −1 in micro-Raman scattering measurements confirmed Mn doped into GaN. ► Negative-magnetoresistance investigations have showed that the film has T c −1 , which is attributed to the vacancy-related local vibrational mode of Mn occupying the Ga site. Temperature dependent negative magnetoresistance measurements provide a direct evidence of magnetic ordering below 50 K for the Mn doped GaN thin film.
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Najar, Adel
2017-04-18
Herein, we report on the studies of GaN nanowires (GaN NWs) prepared via a metal-assisted photochemical electroless etching method with Pt as the catalyst. It has been found that etching time greatly influences the growth of GaN NWs. The density and the length of nanowires increased with longer etching time, and excellent substrate coverage was observed. The average nanowire width and length are around 35 nm and 10 μm, respectively. Transmission electron microscopy (TEM) shows a single-crystalline wurtzite structure and is confirmed by X-ray measurements. The synthesis mechanism of GaN NWs using the metal-assisted photochemical electroless etching method was presented. Photoluminescence (PL) measurements of GaN NWs show red-shift PL peaks compared to the as-grown sample associated with the relaxation of compressive stress. Furthermore, a shift of the E2 peak to the lower frequency in the Raman spectra for the samples etched for a longer time confirms such a stress relaxation. Based on Raman measurements, the compressive stress σxx and the residual strain εxx were evaluated to be 0.23 GPa and 2.6 × 10−4, respectively. GaN NW synthesis using a low cost method might be used for the fabrication of power optoelectronic devices and gas sensors.
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The trap states in lightly Mg-doped GaN grown by MOVPE on a freestanding GaN substrate
Narita, Tetsuo; Tokuda, Yutaka; Kogiso, Tatsuya; Tomita, Kazuyoshi; Kachi, Tetsu
2018-04-01
We investigated traps in lightly Mg-doped (2 × 1017 cm-3) p-GaN fabricated by metalorganic vapor phase epitaxy (MOVPE) on a freestanding GaN substrate and the subsequent post-growth annealing, using deep level transient spectroscopy. We identified four hole traps with energy levels of EV + 0.46, 0.88, 1.0, and 1.3 eV and one electron trap at EC - 0.57 eV in a p-type GaN layer uniformly doped with magnesium (Mg). The Arrhenius plot of hole traps with the highest concentration (˜3 × 1016 cm-3) located at EV + 0.88 eV corresponded to those of hole traps ascribed to carbon on nitrogen sites in n-type GaN samples grown by MOVPE. In fact, the range of the hole trap concentrations at EV + 0.88 eV was close to the carbon concentration detected by secondary ion mass spectroscopy. Moreover, the electron trap at EC - 0.57 eV was also identical to the dominant electron traps commonly observed in n-type GaN. Together, these results suggest that the trap states in the lightly Mg-doped GaN grown by MOVPE show a strong similarity to those in n-type GaN, which can be explained by the Fermi level close to the conduction band minimum in pristine MOVPE grown samples due to existing residual donors and Mg-hydrogen complexes.
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Magnetic structure of URhSi single crystal
Czech Academy of Sciences Publication Activity Database
Prokeš, K.; Andreev, Alexander V.; Honda, F.; Sechovský, V.
2003-01-01
Roč. 261, - (2003), s. 131-138 ISSN 0304-8853 R&D Projects: GA ČR GA202/02/0739 Institutional research plan: CEZ:AV0Z1010914 Keywords : URhSi single crystal * magnetization * neutron diffraction * magnetic structure determination Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.910, year: 2003
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Aluminum-rich mesoporous MFI - type zeolite single crystals
DEFF Research Database (Denmark)
Kustova, Marina; Kustov, Arkadii; Christensen, Christina Hviid
2005-01-01
Zeolitcs are crystalline materials, which are widely used as solid acid catalysts and supports in many industrial processes. Recently, mesoporous MFI-type zeolite single crystals were synthesized by use of carbon particles as a mesopore template and sodium aluminate as the aluminum Source....... With this technique, only zeolites with relatively low Al contents were reported (Si/Al ratio about 100). In this work, the preparation of aluminum-rich mesoporous MFI-type zeolite single crystals (Si/Al similar to 16-50) using aluminum isopropoxide as the aluminum Source is reported for the first time. All samples...... are characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), ammonia temperature programmed desorption (NH3-TPD), and N-2 adsorption measurements. The obtained zeolites combine the high crystallinity and the characteristic micropores of zeolites with an intracrystalline mesopore system...
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Thermal stability of radiation-induced free radicals in γ-irradiated l-alanine single crystals
International Nuclear Information System (INIS)
Maltar-Strmecki, N.; Rakvin, B.
2005-01-01
Decay of the radiation-induced stable free radicals in l-alanine single crystals and powders at the temperatures from 379 to 476K was examined by electron paramagnetic resonance. For single crystals, the calculated activation energy of the radical decay is 104.3±1.7kJ/mol (i.e. 12 538+/-202K) and the frequency factor lnν 0 is 24.1±0.4min -1 . The lifetime of the radical in single crystals at 296K is 162 years. The results confirm the long-term stability of the radicals, but the decay was found to be faster in large crystals than in powders
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Directory of Open Access Journals (Sweden)
S. Reena Devi
2017-06-01
Full Text Available Organic single crystal of 2-aminopyridinium 2,4-dinitrophenolate single crystal was grown by slow evaporation technique. The cell parameters and space group (P were determined from single X-ray diffraction analysis. HRXRD studies ascertained the crystalline quality. UV-Visible and PL spectral studies revealed the emission in red region, transparency (75% cutoff wavelength around 440 nm respectively. The laser damage threshold of grown crystal was estimated by using Nd:YAG laser beam and these results were mutually related with specific heat capacity of the grown crystal. The third-order nonlinear optical parameters were estimated by Z-scan technique which is useful for optical applications.
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Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates
Energy Technology Data Exchange (ETDEWEB)
Monemar, Bo [Department of Physics, Chemistry and Biology, Linkoeping University, 581 83 Linkoeping (Sweden); Solid State Physics-The Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund (Sweden); Paskov, Plamen; Pozina, Galia; Hemmingsson, Carl; Bergman, Peder [Department of Physics, Chemistry and Biology, Linkoeping University, 581 83 Linkoeping (Sweden); Lindgren, David; Samuelson, Lars [Solid State Physics-The Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund (Sweden); Ni, Xianfeng; Morkoc, Hadis [Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284-3072 (United States); Paskova, Tanya [Kyma Technologies Inc., Raleigh, North Carolina 27617 (United States); Bi, Zhaoxia; Ohlsson, Jonas [Glo AB, Ideon Science Park, Scheelevaegen 17, 223 70 Lund (Sweden)
2011-07-15
Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 10{sup 18} cm{sup -3} to above 10{sup 20} cm{sup -3}. The samples were grown with MOCVD at reduced pressure on low defect density bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9-3.3 eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependence of the BE spectra on excitation intensity as well as the transient decay behaviour demonstrate acoustic phonon assisted transfer between the acceptor BE states. The lower energy donor-acceptor pair spectra suggest the presence of deep acceptors, in addition to the two main shallower ones at about 0.23 eV. Similar spectra from Mg-doped GaN nanowires (NWs) grown by MOCVD are also briefly discussed. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
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Kim, Jaekyun; Kang, Jingu; Cho, Sangho; Yoo, Byungwook; Kim, Yong-Hoon; Park, Sung Kyu
2014-11-01
High-performance microrod single crystal organic transistors based on a p-type 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) semiconductor are fabricated and the effects of grain boundaries on the carrier transport have been investigated. The spin-coating of C8-BTBT and subsequent solvent vapor annealing process enabled the formation of organic single crystals with high aspect ratio in the range of 10 - 20. It was found that the organic field-effect transistors (OFETs) based on these single crystals yield a field-effect mobility and an on/off current ratio of 8.04 cm2/Vs and > 10(5), respectively. However, single crystal OFETs with a kink, in which two single crystals are fused together, exhibited a noticeable drop of field-effect mobility, and we claim that this phenomenon results from the carrier scattering at the grain boundary.
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GaN epitaxial layers grown on multilayer graphene by MOCVD
Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Gan, Lin; Xu, Bingshe
2018-04-01
In this study, GaN epitaxial layers were successfully deposited on a multilayer graphene (MLG) by using metal-organic chemical vapor deposition (MOCVD). Highly crystalline orientations of the GaN films were confirmed through electron backscatter diffraction (EBSD). An epitaxial relationship between GaN films and MLG is unambiguously established by transmission electron microscope (TEM) analysis. The Raman spectra was used to analyze the internal stress of GaN films, and the spectrum shows residual tensile stress in the GaN films. Moreover, the results of the TEM analysis and Raman spectra indicate that the high quality of the MLG substrate is maintained even after the growth of the GaN film. This high-quality MLG makes it possible to easily remove epitaxial layers from the supporting substrate by micro-mechanical exfoliation technology. This work can aid in the development of transferable devices using GaN films.
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Modeling Nonlinear Elastic-plastic Behavior of RDX Single Crystals During Indentation
2012-01-01
single crystals has also been probed using shock experiments (6, 12) and molecular dynamics simulations (12–14). RDX undergoes a polymorphic phase...Patterson, J.; Dreger, Z.; Gupta, Y. Shock-wave Induced Phase Transition in RDX Single Crystals. J. Phys. Chem. B 2007, 111, 10897–10904. 17. Bedrov, D...and Volume Compression of β - HMX and RDX . In Proc. Int. Symp. High Dynamic Pressures; Commissariat a l’Energie Atomique: Paris, 1978; pp 3–8. 24
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Room temperature exchange bias in SmFeO_3 single crystal
International Nuclear Information System (INIS)
Wang, Xiaoxiong; Cheng, Xiangyi; Gao, Shang; Song, Junda; Ruan, Keqing; Li, Xiaoguang
2016-01-01
Exchange bias phenomenon is generally ascribed to the unidirectional magnetic shift along the field axes at interface of two magnetic materials. Room temperature exchange bias is found in SmFeO_3 single crystal. The behavior after different cooling procedure is regular, and the training behavior is attributed to the athermal training and its pinning origin is attributed to the antiferromagnetic clusters. Its being single phase and occurring at room temperature make it an appropriate candidate for application. - Graphical abstract: Room temperature exchange bias was found in oxide single crystal. Highlights: • Room temperature exchange bias has been discovered in single-crystalline SmFeO_3. • Its pinning origin is attributed to the antiferromagnetic clusters. • Its being single phase and occurring at room temperature make it an appropriate candidate for application.
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A diamond-anvil high-pressure cell for X-ray diffraction on a single crystal
International Nuclear Information System (INIS)
Malinowski, M.
1987-01-01
A new diamond-anvil high-pressure cell is described which can be used in single-crystal X-ray diffraction instruments to collect X-ray intensity data from single-crystal samples up to hydrostatic pressures of about 10 GPa. A unique design allows two types of diffraction geometry to be applied in single-crystal high-pressure diffraction experiments. More than 85% of the Ewald sphere is accessible, and a continuous range of 2θ values is available from 0 up to about 160 0 . Pressure may be calibrated by the ruby fluorescence technique or by the use of an internal X-ray-standard single crystal. The design of our diamond-anvil cell would allow, with little or no modification, operation at high and low temperatures, optical studies and powder diffractometer work. (orig.)
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Characteristics evaluation of stilbene single crystal grown by vertical bridgman technique
International Nuclear Information System (INIS)
Jo, Kwang Ho
2012-02-01
As the nature of organic scintillator, stilbene single crystal's decay time is only a couple of nano seconds, which makes it suitable for fast neutron detection. However, the entire amount of stilbene single crystal being used relies on import currently. As the necessity of fast neutron detection equipment such as KSTAR and Sodium-cooled Fast Reactor system increases, the goal is to have our own domestic technology through the growth of stilbene single crystal. The emission wavelength of grown stilbene single crystal is confirmed, and the property of grown stilbene single crystal is assessed compared to commercial stilbene (Ukraine ISMA research center) through gamma ray and neutron tests. In this research, we have grown stilbenes through Bridgman technique, and obtained three stilbenes out of two amples. (Two ones of Φ 30 mm x 15 mm, and Φ 40 mm x 17 mm from the first ample, and size of Φ 25 mm x 13 mm from the other) The grown stilbene's emission wavelength and inherent property of stilbene are confirmed. As the result of gamma ray test, we have confirmed linearity of grown stilbene's scintillator, and the relative light yield ratio is proven 101% efficiency to reference stilbene. Neutron detection efficiency of the three stilbenes amounts to 80% of reference stilbene, and FOM of them is 108% efficiency to reference stilbene's one. Although Ukraine ISMA research center still holds a dominant position with world-class efficiency and performance of its stilbene, we expect to produce a better stilbene with our domestic technology development. Through this, fast neutron detection technique can be obtained, which opens up an opportunity to be used not only in neutron monitoring system in nuclear fusion reactor, but also in alternative measurement technique as the unit price of He-3 increases recently
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Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs
Brault, Julien; Damilano, Benjamin; Courville, Aimeric; Leroux, Mathieu; Kahouli, Abdelkarim; Korytov, Maxim; Vennéguès, Philippe; Randazzo, Gaetano; Chenot, Sébastien; Vinter, Borge; De Mierry, Philippe; Massies, Jean; Rosales, Daniel; Bretagnon, Thierry; Gil, Bernard
2014-03-01
(Al,Ga)N light emitting diodes (LEDs), emitting over a large spectral range from 360 nm (GaN) down to 210 nm (AlN), have been successfully fabricated over the last decade. Clear advantages compared to the traditional mercury lamp technology (e.g. compactness, low-power operation, lifetime) have been demonstrated. However, LED efficiencies still need to be improved. The main problems are related to the structural quality and the p-type doping efficiency of (Al,Ga)N. Among the current approaches, GaN nanostructures, which confine carriers along both the growth direction and the growth plane, are seen as a solution for improving the radiative recombination efficiency by strongly reducing the impact of surrounding defects. Our approach, based on a 2D - 3D growth mode transition in molecular beam epitaxy, can lead to the spontaneous formation of GaN nanostructures on (Al,Ga)N over a broad range of Al compositions. Furthermore, the versatility of the process makes it possible to fabricate nanostructures on both (0001) oriented "polar" and (11 2 2) oriented "semipolar" materials. We show that the change in the crystal orientation has a strong impact on the morphological and optical properties of the nanostructures. The influence of growth conditions are also investigated by combining microscopy (SEM, TEM) and photoluminescence techniques. Finally, their potential as UV emitters will be discussed and the performances of GaN / (Al,Ga)N nanostructure-based LED demonstrators are presented.
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In situ ion channeling study of gallium disorder and gold profiles in Au-implanted GaN
International Nuclear Information System (INIS)
Jiang, W.; Weber, W. J.; Thevuthasan, S.
2000-01-01
Disorder accumulation and annealing behavior on the Ga sublattice in gallium nitride (GaN) implanted with 1.0 MeV Au 2+ (60 degree sign off surface normal) at 180 or 300 K have been studied using in situ Rutherford backscattering spectrometry in a -channeling geometry. Complete amorphization in GaN is attained at 6.0 and 20 Au 2+ /nm 2 for irradiation at 180 and 300 K, respectively. A saturation in the Ga disorder at and behind the damage peak was observed at intermediate ion fluences at both 180 and 300 K. No measurable thermal recovery was found at 300 K for the full range of damage produced at 180 K. However, distinct epitaxial regrowth in the bulk and Ga reordering at surface occurred after annealing at 870 K. The implanted Au readily diffuses into the highly damaged regions at elevated temperatures, and the redistribution of the Au atoms in the implanted GaN varies with the damage profiles. A double-peak Au profile developed with the maxima located in the amorphous surface region and near the Au mean projected range. The result is interpreted as Au atom diffusion into the amorphous regime near the surface and Au trapping at irradiation-induced defects in the crystal structure. This trapping effect is also evidenced in this study by the suppressed recovery of the Au-decorated disorder in GaN. (c) 2000 American Institute of Physics
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Recent progress in large grain/single crystal high RRR niobium
International Nuclear Information System (INIS)
Ganapati Rao Myneni; Peter Kneisel; Tadeu Carneiro; S.R. Agnew; F. Stevie
2005-01-01
High RRR bulk niobium Superconducting Radio Frequency (SRF) cavity technology is chosen for the International Linear Collider (ILC). The SRF community was convinced until now that fine grain polycrystalline RRR niobium sheets obtained via forging and cross rolling are essential for forming the SRF Cavities. However, it was recently discovered under a joint Reference Metals Company, Inc., - JLAB CRADA that large grain/single crystal RRR niobium sliced directly from ingots is highly ductile reaching 100 percent elongation. This discovery led to the successful fabrication of several SRF single and/or multi cell structures, formed with sliced RRR discs from the ingots, operating at 2.3, 1.5 and 1.3 GHz. This new exciting development is expected to offer high performance accelerator structures not only at reduced costs but also with simpler fabrication and processing conditions. As a result there is a renewed interest in the evaluation and understanding of the large grain and single crystal niobium with respect to their mechanical and physical properties as well as the oxidation behavior and the influence of impurities such as hydrogen and Ta. In this paper the results of many collaborative studies on large grain and single crystal high RRR niobium between JLAB, Universities and Industry are presented
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Polarization of stacking fault related luminescence in GaN nanorods
Directory of Open Access Journals (Sweden)
G. Pozina
2017-01-01
Full Text Available Linear polarization properties of light emission are presented for GaN nanorods (NRs grown along [0001] direction on Si(111 substrates by direct-current magnetron sputter epitaxy. The near band gap photoluminescence (PL measured at low temperature for a single NR demonstrated an excitonic line at ∼3.48 eV and the stacking faults (SFs related transition at ∼3.43 eV. The SF related emission is linear polarized in direction perpendicular to the NR growth axis in contrast to a non-polarized excitonic PL. The results are explained in the frame of the model describing basal plane SFs as polymorphic heterostructure of type II, where anisotropy of chemical bonds at the interfaces between zinc blende and wurtzite GaN subjected to in-built electric field is responsible for linear polarization parallel to the interface planes.
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Annealing behavior of solution grown polyethylene single crystals
Loos, J.; Tian, M.
2006-01-01
The morphology evolution of solution grown polyethylene single crystals has been studied upon annealing below their melting temperature by using atomic force microscopy (AFM). AFM investigations have been performed ex situ, which means AFM investigations at room temperature after the annealing
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Anisotropic charge transport in large single crystals of π-conjugated organic molecules.
Hourani, Wael; Rahimi, Khosrow; Botiz, Ioan; Koch, Felix Peter Vinzenz; Reiter, Günter; Lienerth, Peter; Heiser, Thomas; Bubendorff, Jean-Luc; Simon, Laurent
2014-05-07
The electronic properties of organic semiconductors depend strongly on the nature of the molecules, their conjugation and conformation, their mutual distance and the orientation between adjacent molecules. Variations of intramolecular distances and conformation disturb the conjugation and perturb the delocalization of charges. As a result, the mobility considerably decreases compared to that of a covalently well-organized crystal. Here, we present electrical characterization of large single crystals made of the regioregular octamer of 3-hexyl-thiophene (3HT)8 using a conductive-atomic force microscope (C-AFM) in air. We find a large anisotropy in the conduction with charge mobility values depending on the crystallographic orientation of the single crystal. The smaller conduction is in the direction of π-π stacking (along the long axis of the single crystal) with a mobility value in the order of 10(-3) cm(2) V(-1) s(-1), and the larger one is along the molecular axis (in the direction normal to the single crystal surface) with a mobility value in the order of 0.5 cm(2) V(-1) s(-1). The measured current-voltage (I-V) curves showed that along the molecular axis, the current followed an exponential dependence corresponding to an injection mode. In the π-π stacking direction, the current exhibits a space charge limited current (SCLC) behavior, which allows us to estimate the charge carrier mobility.
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Formation of oriented nitrides by N+ ion implantation in iron single crystals
International Nuclear Information System (INIS)
Costa, A.R.G.; Silva, R.C. da; Ferreira, L.P.; Carvalho, M.D.; Silva, C.; Franco, N.; Godinho, M.
2014-01-01
Iron single crystals were implanted with nitrogen at room temperature, with a fluence of 5×10 17 cm −2 and 50 keV energy, to produce iron nitride phases and characterize the influence of the crystal orientation. The stability and evolution of the nitride phases and diffusion of implanted nitrogen were studied as a function of successive annealing treatments at 250 °C in vacuum. The composition, structure and magnetic properties were characterized using RBS/channeling, X-Ray Diffraction, Magnetic Force Microscopy, Magneto-optical Kerr Effect and Conversion Electron Mössbauer Spectroscopy. In the as-implanted state the formation of Fe 2 N phase was clearly identified in all single crystals. This phase is not stable at 250 °C and annealing at this temperature promotes the formation of ε-Fe 3 N, or γ′-Fe 4 N, depending on the orientation of the substrate. - Highlights: • Oriented magnetic iron nitrides were obtained by nitrogen implantation into iron single crystals. • The stable magnetic nitride phase at 250 °C depends on the orientation of the host single crystal, being γ'-Fe 4 N or ε-Fe 3 N. • The easy magnetization axis was found to lay in the (100) plane for cubic γ'-Fe 4 N and out of (100) plane for hexagonal ε-Fe 3 N
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Growth and study of some gel grown group II single crystals of iodate
Indian Academy of Sciences (India)
Unknown
Abstract. Single crystals of calcium iodate and barium iodate were grown by simple gel technique by single diffusion method. The optimum conditions were established by varying various parameters such as pH of gel solution, gel concentration, gel setting time, concentration of the reactants etc. Crystals having different.
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Energy Technology Data Exchange (ETDEWEB)
Chen, Jr-Tai, E-mail: jrche@ifm.liu.se; Hsu, Chih-Wei; Forsberg, Urban; Janzén, Erik [Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE 581 83 Linköping (Sweden)
2015-02-28
Severe surface decomposition of semi-insulating (SI) GaN templates occurred in high-temperature H{sub 2} atmosphere prior to epitaxial growth in a metalorganic chemical vapor deposition system. A two-step heating process with a surface stabilization technique was developed to preserve the GaN template surface. Utilizing the optimized heating process, a high two-dimensional electron gas mobility ∼2000 cm{sup 2}/V·s was obtained in a thin AlGaN/AlN/GaN heterostructure with an only 100-nm-thick GaN spacer layer homoepitaxially grown on the GaN template. This technique was also demonstrated viable for native GaN substrates to stabilize the surface facilitating two-dimensional growth of GaN layers. Very high residual silicon and oxygen concentrations were found up to ∼1 × 10{sup 20 }cm{sup −3} at the interface between the GaN epilayer and the native GaN substrate. Capacitance-voltage measurements confirmed that the residual carbon doping controlled by growth conditions of the GaN epilayer can be used to successfully compensate the donor-like impurities. State-of-the-art structural properties of a high-mobility AlGaN/AlN/GaN heterostructure was then realized on a 1 × 1 cm{sup 2} SI native GaN substrate; the full width at half maximum of the X-ray rocking curves of the GaN (002) and (102) peaks are only 21 and 14 arc sec, respectively. The surface morphology of the heterostructure shows uniform parallel bilayer steps, and no morphological defects were noticeable over the entire epi-wafer.
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Thermal shock cracking of GSO single crystal
International Nuclear Information System (INIS)
Miyazaki, Noriyuki; Yamamoto, Kazunari; Tamura, Takaharu; Kurashige, Kazuhisa; Ishibashi, Hiroyuki; Susa, Kenzo
1998-01-01
The quantitative estimation of the failure stress of a gadolinium orthosilicate (Gd 2 SiO 5 , hereafter abbreviated as GSO) single crystal due to thermal shock was investigated. A cylindrical test specimen was heated in a silicone oil bath, then subjected to thermal shock by pouring room temperature silicone oil. Cracking occurred during cooling. The heat conduction analysis was performed to obtain temperature distribution in a GSO single crystal at cracking, using the surface temperatures measured in the thermal shock cracking test. Then the thermal stress was calculated using temperature profile of the test specimen obtained from the heat conduction analysis. It is found from the results of the thermal stress analysis and the observation of the cracking in test specimens that the thermal shock cracking occurs in a cleavage plane due to the stress normal to the plane. Three-point bending tests were also performed to examine the relationship between the critical stress for thermal shock cracking and the three-point bending strength obtained from small-sized test specimens. (author)
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Gondal, Mohammed A; Chang, Xiao F; Yamani, Zain H; Yang, Guo F; Ji, Guang B
2011-01-01
Single-crystalline Gallium Nitride (GaN) thin films were fabricated and grown by metal organic chemical vapor deposition (MOCVD) method on c-plane sapphire substrates and then characterized by high resolution-X-ray diffraction (HR-XRD) and photoluminescence (PL) measurements. The photocatalytic decomposition of Sulforhodamine B (SRB) molecules on GaN thin films was investigated under 355 nm pulsed UV laser irradiation. The results demonstrate that as-grown GaN thin films exhibited efficient degradation of SRB molecules and exhibited an excellent photocatalytic-activity-stability under UV pulsed laser exposure.
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Zn-dopant dependent defect evolution in GaN nanowires
Yang, Bing; Liu, Baodan; Wang, Yujia; Zhuang, Hao; Liu, Qingyun; Yuan, Fang; Jiang, Xin
2015-10-01
Zn doped GaN nanowires with different doping levels (0, doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity. Several kinds of twin boundaries, including (101&cmb.macr;3), (101&cmb.macr;1) and (202&cmb.macr;1), as well as Type I stacking faults (...ABABC&cmb.b.line;BCB...), are observed in the nanowires. The increasing Zn doping level (GaN nanowires. At high Zn doping level (3-5 at%), meta-stable cubic zinc blende (ZB) domains are generated in the WZ GaN nanowires. The WZ/ZB phase boundary (...ABABAC&cmb.b.line;BA...) can be identified as Type II stacking faults. The density of stacking faults (both Type I and Type II) increases with increasing the Zn doping levels, which in turn leads to a rough-surface morphology in the GaN nanowires. First-principles calculations reveal that Zn doping will reduce the formation energy of both Type I and Type II stacking faults, favoring their nucleation in GaN nanowires. An understanding of the effect of Zn doping on the defect evolution provides an important method to control the microstructure and the electrical properties of p-type GaN nanowires.Zn doped GaN nanowires with different doping levels (0, doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity. Several kinds of twin boundaries, including (101&cmb.macr;3), (101&cmb.macr;1) and (202&cmb.macr;1), as well as Type I stacking faults (...ABABC&cmb.b.line;BCB...), are observed in the nanowires. The increasing Zn doping level (GaN nanowires. At high Zn doping level (3-5 at%), meta
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Nucleation of recrystallisation in castings of single crystal Ni-based superalloys
International Nuclear Information System (INIS)
Mathur, Harshal N.; Panwisawas, Chinnapat; Jones, C. Neil; Reed, Roger C.; Rae, Catherine M.F.
2017-01-01
Recrystallisation in single crystal Ni-based superalloys during solution heat treatment results in a significant cost to the investment casting industry. In this paper two sources of surface nucleation have been identified in the alloy CMSX-4 ® . Firstly, Electron Backscattered Diffraction (EBSD) has revealed micro-grains of γ′, between 2 and 30 μm diameter in the layer of surface eutectic found in the upper part of the casting. These have high angle boundaries with respect to the bulk single crystal and a fraction coarsen during solution heat treatment. Secondly, in the lower regions where surface eutectic does not form, locally deformed regions, 5–20 μm deep, form where the metal adheres to the mould. The local strain causes misorientations up to ≈20° with respect the bulk single crystal, and after heat treatment these regions develop into small grains of similar low-angle misorientations. However, they also form twins to produce further grains which have mobile high-angle boundaries with respect to the bulk single crystal. Experiments have shown that micro-grains at the surface grow to cause full recrystallisation where there is sufficient strain in the bulk material, and by removing these surface defects, recrystallisation can be completely mitigated. Etching of the cast surface is demonstrated to be an effective method of achieving this.
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Neutron-Phonon Interaction Studies in Copper, Zinc and Magnesium Single Crystals
International Nuclear Information System (INIS)
Maliszewski, E.; Sosnowski, J.; Blinowski, K.; Kozubowski, J.; Padlo, L.; Sledziewska, D.
1963-01-01
The phonon dispersion relations in copper single crystals has been studied by means of a triple-axis crystal neutron spectrometer. In the [100] direction the transversal branch, not reported in the papers of Cabie and Jacrot, has been found. This branch fits well to the recent data of sound velocity; however, it differs partly from the X-ray results of Jacobsen. For the longitudinal branch in the [100] direction the dispersion curve obtained by Cribier and Jacrot is lying well above the Jacobsen's curve, and the experimental points reported in the present paper support the results of Cribier and Jacrot. The phonon dispersion relations in zinc and magnesium single crystals has been studied using the cold neutron method and by means of a triple-axis crystal neutron spectrometer as well. The scattering surfaces in the [1010] plane were traced, the AT and AL branches found and the phonon dispersion relations in the [001] and [010] directions obtained. The results have been compared with those obtained by Johnson with X-rays. In the [001] direction the present results fit well lo Johnson's foe the AL branch. In the [010] direction for the AT branch a large discrepancy has been found between Johnson's and the present results. Some explanation of this discrepancy is given. Similar measurements in the same directions in magnesium single crystals are under way and will be reported. (author) [fr
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Growth and characterization of high-purity SiC single crystals
Augustine, G.; Balakrishna, V.; Brandt, C. D.
2000-04-01
High-purity SiC single crystals with diameter up to 50 mm have been grown by the physical vapor transport method. Finite element analysis was used for thermal modeling of the crystal growth cavity in order to reduce stress in the grown crystal. Crystals are grown in high-purity growth ambient using purified graphite furniture and high-purity SiC sublimation sources. Undoped crystals up to 50 mm in diameter with micropipe density less than 100 cm -2 have been grown using this method. These undoped crystals exhibit resistivities in the 10 3 Ω cm range and are p-type due to the presence of residual acceptor impurities, mainly boron. Semi-insulating SiC material is obtained by doping the crystal with vanadium. Vanadium has a deep donor level located near the middle of the band gap, which compensates the residual acceptor resulting in semi-insulating behavior.
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Angular and magnetic field dependences of critical current in irradiated YBaCuO single crystals
International Nuclear Information System (INIS)
Petrusenko, Yu.
2010-01-01
The investigation of mechanisms responsible for the current-carrying capability of irradiated high-temperature superconductors (HTSC) was realized. For the purpose, experiments were made to investigate the effect of point defects generated by high-energy electron irradiation on the critical temperature and the critical current in high-Tc superconducting single crystals YBa 2 Cu 3 O 7-x . The transport current density measured in HTSC single crystals YBa 2 Cu 3 O 7-x by the dc-method was found to exceed 80000 A/cm 2 . The experiments have demonstrated a more than 30-fold increase in the critical current density in single crystals irradiated with 2.5 MeV electrons to a dose of 3·10 18 el/cm 2 . Detailed studies were made into the anisotropy of critical current and the dependence of critical current on the external magnetic field strength in irradiated single crystals. A high efficiency of point defects as centers of magnetic vortex pinning in HTSC single crystals was first demonstrated.
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Energy Technology Data Exchange (ETDEWEB)
Pang, Judy W.L., E-mail: pangj@ornl.gov [Materials Science and Technology Division, Oak Ridge National Laboratory, 1 Behtel Valley Road, Oak Ridge, TN 37831 (United States); Ice, Gene E. [Materials Science and Technology Division, Oak Ridge National Laboratory, 1 Behtel Valley Road, Oak Ridge, TN 37831 (United States); Liu Wenjun [Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439 (United States)
2010-11-25
We report on novel 3D spatially resolved X-ray diffraction microscopy studies of self-affine behavior in deformed single crystals. This study extends surface profile measurements of self-affined morphology changes in single crystals during deformation to include local lattice rotations and sub-surface behavior. Investigations were made on the spatial correlation of the local lattice rotations in 8% tensile deformed Cu single crystals oriented with [1 2 3], [1 1 1] and [0 0 1] axes parallel to the tensile axis. The nondestructive depth-resolved measurements were made over a length scale of one to hundreds of micrometers. Self-affined correlation was found both at the surface and below the surface of the samples. A universal exponent for the power-law similar to that observed with surface profile methods is found at the surface of all samples but crystallographically sensitive changes are observed as a function of depth. Correlation lengths of the self-affine behavior vary with the [1 2 3] crystal exhibiting the longest self-affine length scale of 70 {mu}m with only 18 {mu}m for the [1 1 1] and [0 0 1] crystals. These measurements illuminate the transition from surface-like to bulk-like deformation behavior and provide new quantitative information to guide emerging models of self-organized structures in plasticity.
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Energetics of Mg incorporation at GaN(0001) and GaN(0001¯) surfaces
Sun, Qiang; Selloni, Annabella; Myers, T. H.; Doolittle, W. Alan
2006-04-01
By using density functional calculations in the generalized gradient approximation, we investigate the energetics of Mg adsorption and incorporation at GaN(0001) and GaN(0001¯) surfaces under various Ga and Mg coverage conditions as well as in presence of light or electron beam-induced electronic excitation. We find significant differences in Mg incorporation between Ga- and N-polar surfaces. Mg incorporation is easier at the Ga-polar surface, but high Mg coverages are found to cause important distortions which locally change the polarity from Ga to N polar. At the N-rich and moderately Ga-rich GaN(0001) surface, 0.25 ML of Mg substituting Ga in the top bilayer strongly reduce the surface diffusion barriers of Ga and N adatoms, in agreement with the surfactant effect observed in experiments. As the Mg coverage exceeds 0.5 ML, partial incorporation in the subsurface region (second bilayer) becomes favorable. A surface structure with 0.5 ML of incorporated Mg in the top bilayer and 0.25 ML in the second bilayer is found to be stable over a wide range of Ga chemical potential. At the Ga bilayer-terminated GaN(0001) surface, corresponding to Ga-rich conditions, configurations where Mg is incorporated in the interface region between the metallic Ga bilayer and the underlying GaN bilayer appear to be favored. At the N-polar surface, Mg is not incorporated under N-rich or moderately Ga-rich conditions, whereas incorporation in the adlayer may take place under Ga-rich conditions. In the presence of light or electron beam induced excitation, energy differences between Mg incorporated at the surface and in deeper layers are reduced so that the tendency toward surface segregation is also reduced.
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Experimental study and numerical simulation of the plastic deformation of zirconium single crystals
International Nuclear Information System (INIS)
Lebon, C.
2011-01-01
There is only few experimental data in the literature on the zirconium single crystals and no constitutive laws for this single crystal material are provided. The goal of this work is then to create an experimental database like the Critical Resolved Shear Stress (CRSS) for the prismatic slip, the strain-hardening, the activation of the prismatic glide system and the activation volumes. We determine theses parameters from image correlation method. Then, we develop a new multi-scale approach using dislocations dynamics concept and finite element computations. Finally, a first single crystal constitutive law for the zirconium is proposed and a good agreement with the experimental data is obtained. (author) [fr
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Neutron monochromators of BeO, MgO and ZnO single crystals
Energy Technology Data Exchange (ETDEWEB)
Adib, M.; Habib, N. [Reactor Physics Department, NRC, AEAE, Cairo (Egypt); Bashter, I.I. [Physics Department, Faculty of Science, Zagazig University (Egypt); Morcos, H.N.; El-Mesiry, M.S. [Reactor Physics Department, NRC, AEAE, Cairo (Egypt); Mansy, M.S., E-mail: mohamedmansy_np@yahoo.com [Physics Department, Faculty of Science, Zagazig University (Egypt)
2014-05-21
The monochromatic features of BeO, MgO and ZnO single crystals are discussed in terms of orientation, mosaic spread, and thickness within the wavelength band from 0.05 up to 0.5 nm. A computer program MONO, written in “FORTRAN”, has been developed to carry out the required calculations. Calculation shows that a 5 mm thick MgO single crystal cut along its (2 0 0) plane having mosaic spread of 0.5° FWHM has the optimum parameters when it is used as a neutron monochromator. Moreover, at wavelengths shorter than 0.24 nm the reflected monochromatic neutrons are almost free from the higher order ones. The same features are seen with BeO (0 0 2) with less reflectivity than that of the former. Also, ZnO cut along its (0 0 2) plane is preferred over the others only at wavelengths longer than 0.20 nm. When the selected monochromatic wavelength is longer than 0.24 nm, the neutron intensities of higher orders from a thermal reactor flux are higher than those of the first-order one. For a cold reactor flux, the first order of BeO and MgO single crystals is free from the higher orders up to 0.4 nm, and ZnO at wavelengths up to 0.5 nm. - Highlights: • Monochromatic features of BeO, MgO and ZnO single crystals. • Calculations of neutron reflectivity using a computer program MONO. • Optimum mosaic spread, thickness and cutting plane of single crystals.
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Results on the Coherent Interaction of High Energy Electrons and Photons in Oriented Single Crystals
Apyan, A.; Badelek, B.; Ballestrero, S.; Biino, C.; Birol, I.; Cenci, P.; Connell, S.H.; Eichblatt, S.; Fonseca, T.; Freund, A.; Gorini, B.; Groess, R.; Ispirian, K.; Ketel, T.J.; Kononets, Yu.V.; Lopez, A.; Mangiarotti, A.; van Rens, B.; Sellschop, J.P.F.; Shieh, M.; Sona, P.; Strakhovenko, V.; Uggerhoj, E.; Uggerhj, Ulrik Ingerslev; Unel, G.; Velasco, M.; Vilakazi, Z.Z.; Wessely, O.; Kononets, Yu.V.
2005-01-01
The CERN-NA-59 experiment examined a wide range of electromagnetic processes for multi-GeV electrons and photons interacting with oriented single crystals. The various types of crystals and their orientations were used for producing photon beams and for converting and measuring their polarisation. The radiation emitted by 178 GeV unpolarised electrons incident on a 1.5 cm thick Si crystal oriented in the Coherent Bremsstrahlung (CB) and the String-of-Strings (SOS) modes was used to obtain multi-GeV linearly polarised photon beams. A new crystal polarimetry technique was established for measuring the linear polarisation of the photon beam. The polarimeter is based on the dependence of the Coherent Pair Production (CPP) cross section in oriented single crystals on the direction of the photon polarisation with respect to the crystal plane. Both a 1 mm thick single crystal of Germanium and a 4 mm thick multi-tile set of synthetic Diamond crystals were used as analyzers of the linear polarisation. A birefringence ...
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Dhavamurthy, M.; Peramaiyan, G.; Babu, K. Syed Suresh; Mohan, R.
2015-04-01
Organosulfur nonlinear optical single crystals of orthorhombic bis(guanidinium) 5-sulfosalicylate (2CH6N3 +·C7H4O6S2-·H2O) with dimension 14 mm × 4 mm × 5 mm have been grown from methanol and water solvents in 1:1 ratio by the slow evaporation growth technique. The crystal structure and morphology of the crystals have been studied by single-crystal X-ray diffraction. FTIR spectroscopic studies were carried out to identify the functional groups and vibrational modes present in the grown crystals. The UV-Vis spectrum was studied to analyze the linear optical properties of the grown crystals. The thermal gravimetric analysis was conducted on the grown crystals, and the result revealed that the grown crystal is thermally stable up to 65 °C. The dielectric tensor components ɛ 11, ɛ 22 and ɛ 33 of BG5SS crystal were evaluated as a function of frequency at 40 °C. The surface laser damage threshold for the grown crystal was measured using Nd:YAG laser. Further, Vickers micro-hardness study was carried out to analyze the mechanical strength of the grown crystals for various loads.
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Single crystal spectrometer FOX at KENS
International Nuclear Information System (INIS)
Takahashi, M.
2001-01-01
Single crystal spectrometer FOX installed at H1 thermal neutron line on KENS has been renewed recently for the measurement of very weak scattering. We have installed a multidetector system of 36 linearly placed 3 He detectors with collimators instead of former four-circle diffractometer and scintillator detectors. Though the system is quite simple, a large two-dimensional reciprocal space is observed effectively with high S/N rate on new FOX. (author)
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Narayanan, A.; Titus, J.; Rajagopalan, H.; Vippa, P.; Thakur, M.
2006-03-01
Single-crystal film of DAST (4'-dimethylamino-N-methyl-4-stilbazolium tosylate) has been shown [1] to have exceptionally large electro-optic coefficients (r11 ˜ 770 pm/V at 633 nm). In this report, single crystal film of a combination of materials (co-crystal) involving DAST and a dye molecule IR-125 will be discussed. Modified shear method was used to prepare the co-crystal films. The film has been characterized using polarized optical microscopy, optical absorption spectroscopy and x-ray diffraction. The optical absorption spectrum has two major bands: one at about 350--600 nm corresponding to DAST and the other at about 600-900 nm corresponding to IR-125. The x-ray diffraction results show peaks involving the presence of DAST and IR-125 within the co-crystal film. Since the co-crystal has strong absorption at longer wavelengths it is expected to show higher electro-optic coefficients at longer wavelengths. Preliminary measurements at 1.55 μm indicate a high electro-optic coefficient of the co-crystal film. [1] Swamy, Kutty, Titus, Khatavkar, Thakur, Appl. Phys. Lett. 2004, 85, 4025; Kutty, Thakur, Appl. Phys. Lett. 2005, 87, 191111.
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Low-leakage superconducting tunnel junctions with a single-crystal Al{sub 2}O{sub 3} barrier
Energy Technology Data Exchange (ETDEWEB)
Oh, S [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Department of Physics, University of Illinois, Urbana, IL 61801 (United States); Cicak, K; Osborn, K D; Simmonds, R W; Pappas, D P [National Institute of Standards and Technology, Boulder, CO 80305 (United States); McDermott, R; Cooper, K B; Steffen, M; Martinis, J M [University of California, Santa Barbara, CA 93106 (United States)
2005-10-01
We have developed a two-step growth scheme for single-crystal Al{sub 2}O{sub 3} tunnel barriers. The barriers are epitaxially grown on single-crystal rhenium (Re) base electrodes that are grown epitaxially on a sapphire substrate, while polycrystalline Al is used as the top electrode. We show that by first growing an amorphous aluminium (Al) oxide layer at room temperature and crystallizing it at a high temperature in oxygen environment, a morphologically intact single-crystal Al{sub 2}O{sub 3} layer is obtained. Tunnel junctions fabricated from these trilayers show very low subgap leakage current. This single-crystal Al{sub 2}O{sub 3} junction may open a new venue for coherent quantum devices.
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GaN transistors for efficient power conversion
Lidow, Alex; de Rooij, Michael; Reusch, David
2014-01-01
The first edition of GaN Transistors for Efficient Power Conversion was self-published by EPC in 2012, and is currently the only other book to discuss GaN transistor technology and specific applications for the technology. More than 1,200 copies of the first edition have been sold through Amazon or distributed to selected university professors, students and potential customers, and a simplified Chinese translation is also available. The second edition has expanded emphasis on applications for GaN transistors and design considerations. This textbook provides technical and application-focused i
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Electronic transport properties of pentacene single crystals upon exposure to air
Jurchescu, OD; Baas, J; Palstra, TTM; Jurchescu, Oana D.
2005-01-01
We report the effect of air exposure on the electronic properties of pentacene single crystals. Air can diffuse reversibly in and out of the crystals and influences the physical properties. We discern two competing mechanisms that modulate the electronic transport. The presence of oxygen increases
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Crystallinity of the epitaxial heterojunction of C60 on single crystal pentacene
Tsuruta, Ryohei; Mizuno, Yuta; Hosokai, Takuya; Koganezawa, Tomoyuki; Ishii, Hisao; Nakayama, Yasuo
2017-06-01
The structure of pn heterojunctions is an important subject in the field of organic semiconductor devices. In this work, the crystallinity of an epitaxial pn heterojunction of C60 on single crystal pentacene is investigated by non-contact mode atomic force microscopy and high-resolution grazing incidence x-ray diffraction. Analysis shows that the C60 molecules assemble into grains consisting of single crystallites on the pentacene single crystal surface. The in-plane mean crystallite size exceeds 0.1 μm, which is at least five time larger than the size of crystallites deposited onto polycrystalline pentacene thin films grown on SiO2. The results indicate that improvement in the crystal quality of the underlying molecular substrate leads to drastic promotion of the crystallinity at the organic semiconductor heterojunction.
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Yao Xin; Shiohara, Y
2003-01-01
Sm sub 1 sub + sub x Ba sub 2 sub - sub x Cu sub 3 O sub z (SmBCO) single crystals were grown under atmospheric ambient by the top-seeded solution growth method. Inductively coupled plasma results indicate that there is negligible Sm substitution for Ba sites in the grown SmBCO crystals, although they crystallized from different Ba-Cu-O solvents with a wide composition range (Ba/Cu ratio of 0.5-0.6). As a result, these crystals show high superconducting critical transition temperature values (T sub c) of over 93 K with a sharp transition width after oxygenation. A large-sized crystal with an a-b plane of 23 x 22 mm sup 2 and a c-axis of 19 mm was obtained at a high growth rate of nearly 0.13 mm h sup - sup 1. In short, with more controllable thermodynamic parameters, SmBCO single crystals can readily achieve both large size and high superconducting properties. (rapid communication)
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Wrinkle-Free Single-Crystal Graphene Wafer Grown on Strain-Engineered Substrates.
Deng, Bing; Pang, Zhenqian; Chen, Shulin; Li, Xin; Meng, Caixia; Li, Jiayu; Liu, Mengxi; Wu, Juanxia; Qi, Yue; Dang, Wenhui; Yang, Hao; Zhang, Yanfeng; Zhang, Jin; Kang, Ning; Xu, Hongqi; Fu, Qiang; Qiu, Xiaohui; Gao, Peng; Wei, Yujie; Liu, Zhongfan; Peng, Hailin
2017-12-26
Wrinkles are ubiquitous for graphene films grown on various substrates by chemical vapor deposition at high temperature due to the strain induced by thermal mismatch between the graphene and substrates, which greatly degrades the extraordinary properties of graphene. Here we show that the wrinkle formation of graphene grown on Cu substrates is strongly dependent on the crystallographic orientations. Wrinkle-free single-crystal graphene was grown on a wafer-scale twin-boundary-free single-crystal Cu(111) thin film fabricated on sapphire substrate through strain engineering. The wrinkle-free feature of graphene originated from the relatively small thermal expansion of the Cu(111) thin film substrate and the relatively strong interfacial coupling between Cu(111) and graphene, based on the strain analyses as well as molecular dynamics simulations. Moreover, we demonstrated the transfer of an ultraflat graphene film onto target substrates from the reusable single-crystal Cu(111)/sapphire growth substrate. The wrinkle-free graphene shows enhanced electrical mobility compared to graphene with wrinkles.
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Orientation dependence of dispersion and band gap of PIMNT single crystals
He, Chongjun; Chen, Hongbing; Wang, Jiming; Gu, Xiaorong; Wu, Tong; Liu, Youwen
2018-01-01
As piezoelectric materials, optical properties of xPb(In1/2Nb1/2)O3-(1-x-y)Pb(Mg1/3Nb2/3)O3-yPbTiO3 single crystals were not perfectly known. Here refractive indices and optical transmission of 0.25Pb(In1/2Nb1/2)O3-0.42Pb(Mg1/3Nb2/3)O3- 0.33PbTiO3 (PIMNT) single crystal are investigated after poled along different directions. Cauchy dispersion equations of the refractive indices were obtained by least square fitting, which can be used to calculate the refractive indices in the low absorption wavelength range. After poled along [011] direction, the optical transmission of PIMNT single crystal is more than 65% above 0.5 μm, which is much higher than that of [001] and [111] directions. Energy band gap was obtained from absorption coefficient.
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Growth of β-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation
International Nuclear Information System (INIS)
Hwang, Jih-Shang; Liu, Tai-Yan; Chen, Han-Wei; Chattopadhyay, Surjit; Hsu, Geng-Ming; Basilio, Antonio M; Hsu, Yu-Kuei; Tu, Wen-Hsun; Lin, Yan-Gu; Chen, Kuei-Hsien; Li, Chien-Cheng; Wang, Sheng-Bo; Chen, Hsin-Yi; Chen, Li-Chyong
2013-01-01
Enhanced photoelectrochemical (PEC) performances of Ga 2 O 3 and GaN nanowires (NWs) grown in situ from GaN were demonstrated. The PEC conversion efficiencies of Ga 2 O 3 and GaN NWs have been shown to be 0.906% and 1.09% respectively, in contrast to their 0.581% GaN thin film counterpart under similar experimental conditions. A low crystallinity buffer layer between the grown NWs and the substrate was found to be detrimental to the PEC performance, but the layer can be avoided at suitable growth conditions. A band bending at the surface of the GaN NWs generates an electric field that drives the photogenerated electrons and holes away from each other, preventing recombination, and was found to be responsible for the enhanced PEC performance. The enhanced PEC efficiency of the Ga 2 O 3 NWs is aided by the optical absorption through a defect band centered 3.3 eV above the valence band of Ga 2 O 3 . These findings are believed to have opened up possibilities for enabling visible absorption, either by tailoring ion doping into wide bandgap Ga 2 O 3 NWs, or by incorporation of indium to form InGaN NWs. (paper)
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Growth of β-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation.
Hwang, Jih-Shang; Liu, Tai-Yan; Chattopadhyay, Surjit; Hsu, Geng-Ming; Basilio, Antonio M; Chen, Han-Wei; Hsu, Yu-Kuei; Tu, Wen-Hsun; Lin, Yan-Gu; Chen, Kuei-Hsien; Li, Chien-Cheng; Wang, Sheng-Bo; Chen, Hsin-Yi; Chen, Li-Chyong
2013-02-08
Enhanced photoelectrochemical (PEC) performances of Ga(2)O(3) and GaN nanowires (NWs) grown in situ from GaN were demonstrated. The PEC conversion efficiencies of Ga(2)O(3) and GaN NWs have been shown to be 0.906% and 1.09% respectively, in contrast to their 0.581% GaN thin film counterpart under similar experimental conditions. A low crystallinity buffer layer between the grown NWs and the substrate was found to be detrimental to the PEC performance, but the layer can be avoided at suitable growth conditions. A band bending at the surface of the GaN NWs generates an electric field that drives the photogenerated electrons and holes away from each other, preventing recombination, and was found to be responsible for the enhanced PEC performance. The enhanced PEC efficiency of the Ga(2)O(3) NWs is aided by the optical absorption through a defect band centered 3.3 eV above the valence band of Ga(2)O(3). These findings are believed to have opened up possibilities for enabling visible absorption, either by tailoring ion doping into wide bandgap Ga(2)O(3) NWs, or by incorporation of indium to form InGaN NWs.
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Growth, structural, optical and surface analysis of piperazinium tartrate: A NLO single crystal
Gupta, Apurva; Raseel Rahman M., K.; Nair, Lekha
2018-05-01
Single crystal of piperazinium tartrate (PPZT) was grown by the slow evaporation solution growth technique at room temperature. Crystallinity of grown crystal was examined by powder X-ray diffraction. High transparency and wide band gap were observed in the UV-Visible spectroscopic studies. Intense and broad emissions were observed in the blue region, as that is indicated by photoluminescence spectroscopy. The quality of the grown PPZT single crystals were analyzed by the etching studies using the water as the etchant.
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International Nuclear Information System (INIS)
Lee, Suk-Hun; Lee, Hyun-Hwi; Jung, Jong-Jae; Moon, Young-Bu; Kim, Tae Hoon; Baek, Jong Hyeob; Yu, Young Moon
2004-01-01
The role of AlInN 1st /GaN/AlInN 2nd /GaN multi-layer buffer (MLB) on the growth of the high quality GaN epilayers was demonstrated by atomic force microscope (AFM), X-ray diffraction (XRD), photoluminescence, and Hall measurement. The surface morphology and crystalline quality of GaN epilayers were considerably dependent on AlInN layers thicknesses rather than those of GaN inter layers. With optimal thickness of 2 nd AlInN layer, the pit density of GaN epilayers was substantially reduced. Also, the RMS roughness of the well ordered terraces generated on the GaN surface was 1.8 A at 5 x 5 μm 2 . The omega-rocking width of GaN(0002) Bragg peak and Hall mobility of GaN epilayers grown on AlInN 1st /GaN/AlInN 2nd /GaN MLB were 190 arcsec and 500 cm 2 /Vs, while those values of GaN epilayers on single GaN buffer layer were 250 arcsec and 250 cm 2 /Vs, respectively. Especially, the light output power and operating voltage of the fabricated light emitting diodes with this new buffer layer was about 5 mW and 3.1 V (dominant luminous wavelength ∝460 nm) at 20 mA, respectively. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
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Stress field of a near-surface basal screw dislocation in elastically anisotropic hexagonal crystals
Directory of Open Access Journals (Sweden)
Valeri S. Harutyunyan
2017-11-01
Full Text Available In this study, we derive and analyze the analytical expressions for stress components of the dislocation elastic field induced by a near-surface basal screw dislocation in a semi-infinite elastically anisotropic material with hexagonal crystal lattice. The variation of above stress components depending on “free surface–dislocation” distance (i.e., free surface effect is studied by means of plotting the stress distribution maps for elastically anisotropic crystals of GaN and TiB2 that exhibit different degrees of elastic anisotropy. The dependence both of the image force on a screw dislocation and the force of interaction between two neighboring basal screw dislocations on the “free surface–dislocation” distance is analyzed as well. The influence of elastic anisotropy on the latter force is numerically analyzed for GaN and TiB2 and also for crystals of such highly elastically-anisotropic materials as Ti, Zn, Cd, and graphite. The comparatively stronger effect of the elastic anisotropy on dislocation-induced stress distribution quantified for TiB2 is attributed to the higher degree of elastic anisotropy of this compound in comparison to that of the GaN. For GaN and TiB2, the dislocation stress distribution maps are highly influenced by the free surface effect at “free surface–dislocation” distances roughly smaller than ≈15 and ≈50 nm, respectively. It is found that, for above indicated materials, the relative decrease of the force of interaction between near-surface screw dislocations due to free surface effect is in the order Ti > GaN > TiB2 > Zn > Cd > Graphite that results from increase of the specific shear anisotropy parameter in the reverse order Ti < GaN < TiB2 < Zn < Cd < Graphite. The results obtained in this study are also applicable to the case when a screw dislocation is situated in the “thin film–substrate” system at a (0001 basal interface between the film and substrate provided that the elastic constants
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Magnetostriction of Hexagonal HoMnO3 and YMnO3 Single Crystals
Pavlovskii, N. S.; Dubrovskii, A. A.; Nikitin, S. E.; Semenov, S. V.; Terent'ev, K. Yu.; Shaikhutdinov, K. A.
2018-03-01
We report on the magnetostriction of hexagonal HoMnO3 and YMnO3 single crystals in a wide range of applied magnetic fields (up to H = 14 T) at all possible combinations of the mutual orientations of magnetic field H and magnetostriction Δ L/L. The measured Δ L/L( H, T) data agree well with the magnetic phase diagram of the HoMnO3 single crystal reported previously by other authors. It is shown that the nonmonotonic behavior of magnetostriction of the HoMnO3 crystal is caused by the Ho3+ ion; the magnetic moment of the Mn3+ ion parallel to the hexagonal crystal axis. The anomalies established from the magnetostriction measurements of HoMnO3 are consistent with the phase diagram of these compounds. For the isostructural YMnO3 single crystal with a nonmagnetic rare-earth ion, the Δ L/L( H, T) dependences are described well by a conventional quadratic law in a wide temperature range (4-100 K). In addition, the magnetostriction effect is qualitatively estimated with regard to the effect of the crystal electric field on the holmium ion.
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Electrically-pumped, broad-area, single-mode photonic crystal lasers.
Zhu, Lin; Chak, Philip; Poon, Joyce K S; DeRose, Guy A; Yariv, Amnon; Scherer, Axel
2007-05-14
Planar broad-area single-mode lasers, with modal widths of the order of tens of microns, are technologically important for high-power applications and improved coupling efficiency into optical fibers. They may also find new areas of applications in on-chip integration with devices that are of similar size scales, such as for spectroscopy in microfluidic chambers or optical signal processing with micro-electromechanical systems. An outstanding challenge is that broad-area lasers often require external means of control, such as injection-locking or a frequency/spatial filter to obtain single-mode operation. In this paper, we propose and demonstrate effective index-guided, large-area, edge-emitting photonic crystal lasers driven by pulsed electrical current injection at the optical telecommunication wavelength of 1550 nm. By suitable design of the photonic crystal lattice, our lasers operate in a single mode with a 1/e(2) modal width of 25 microm and a length of 600 microm.
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Alignment control and atomically-scaled heteroepitaxial interface study of GaN nanowires.
Liu, Qingyun; Liu, Baodan; Yang, Wenjin; Yang, Bing; Zhang, Xinglai; Labbé, Christophe; Portier, Xavier; An, Vladimir; Jiang, Xin
2017-04-20
Well-aligned GaN nanowires are promising candidates for building high-performance optoelectronic nanodevices. In this work, we demonstrate the epitaxial growth of well-aligned GaN nanowires on a [0001]-oriented sapphire substrate in a simple catalyst-assisted chemical vapor deposition process and their alignment control. It is found that the ammonia flux plays a key role in dominating the initial nucleation of GaN nanocrystals and their orientation. Typically, significant improvement of the GaN nanowire alignment can be realized at a low NH 3 flow rate. X-ray diffraction and cross-sectional scanning electron microscopy studies further verified the preferential orientation of GaN nanowires along the [0001] direction. The growth mechanism of GaN nanowire arrays is also well studied based on cross-sectional high-resolution transmission electron microscopy (HRTEM) characterization and it is observed that GaN nanowires have good epitaxial growth on the sapphire substrate following the crystallographic relationship between (0001) GaN ∥(0001) sapphire and (101[combining macron]0) GaN ∥(112[combining macron]0) sapphire . Most importantly, periodic misfit dislocations are also experimentally observed in the interface region due to the large lattice mismatch between the GaN nanowire and the sapphire substrate, and the formation of such dislocations will favor the release of structural strain in GaN nanowires. HRTEM analysis also finds the existence of "type I" stacking faults and voids inside the GaN nanowires. Optical investigation suggests that the GaN nanowire arrays have strong emission in the UV range, suggesting their crystalline nature and chemical purity. The achievement of aligned GaN nanowires will further promote the wide applications of GaN nanostructures toward diverse high-performance optoelectronic nanodevices including nano-LEDs, photovoltaic cells, photodetectors etc.
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Growth and characterization of lead-free (K,Na)NbO3-based piezoelectric single crystals
International Nuclear Information System (INIS)
Liu, Hairui
2016-01-01
Lead-free piezoelectric materials have received increasing attention in the last decade, driven by environmental issues and health concerns. Of considerable interest is the (K,Na)NbO 3 (KNN)-based system, which possesses a relatively high Curie temperature and good piezoelectric properties. Abundant publications on KNN-based polycrystalline ceramics increased the interest in studying their single-crystalline form, based on two major concerns. The first concern refers to the negative role of grain interactions on the electromechanical response. The second concern deals with domain engineering. The relationship between external electric field direction, crystallographic orientation, and spontaneous polarization vectors for a specific structure can be more readily established in single crystals and thus offers a pathway for an in-depth understanding of fundamental mechanism and potential applications. The exciting enhancement of both piezoelectric and ferroelectric response in lead-based single crystals also encourages the further exploration of KNN-based piezoelectric crystals, as they possess the same perovskite structure. The main goal of this thesis is to find possible approaches for improved electromechanical properties in KNN-based piezoelectric single crystals. In Chapter 2, the current development of KNN-based single crystals as piezoelectrics is reviewed, following a short introduction of fundamental knowledge on piezoelectrics and ferroelectrics. Both submerged-seed solution growth and top-seeded solution growth techniques were employed to produce single crystals, as described detailed in Chapter 3. Emphasis is subsequently placed on issues of the crystal growth process, effective methods to enhance electrical properties, and crystallographic orientation-dependent electrical properties in Li-, Ta-, and/or Sb-substituted KNN single crystals. The main conclusions from the crystal growth aspect are presented in Chapter 4 and can be summarized as follows: (i
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Linear, non-linear and thermal properties of single crystal of LHMHCl
Kulshrestha, Shobha; Shrivastava, A. K.
2018-05-01
The single crystal of amino acid of L-histidine monohydrochloride was grown by slow evaporation technique at room temperature. High optical quality and appropriate size of crystals were grown under optimized growth conditions. The grown crystals were transparent. Crystals are characterized with different characterizations such as Solubility test, UV-Visible, optical band gap (Eg). With the help of optical data to be calculate absorption coefficient (α), extinction coefficient (k), refractive index (n), dielectric constant (ɛ). These optical constants are shows favorable conditions for photonics devices. Second harmonic generation (NLO) test show the green light emission which is confirm that crystal have properties for laser application. Thermal stability of grown crystal is confirmed by TG/DTA.
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Growth and characterisation of lead iodide single crystals
International Nuclear Information System (INIS)
Tonn, Justus
2012-01-01
The work in hand deals with the growth and characterisation of lead iodide (PbI 2 ) single crystals. PbI 2 is regarded as a promising candidate for low-noise X- and gamma ray detection at room temperature. Its benefits if compared to conventional materials like HgI 2 , CdTe, Si, or GaAs lie in a band gap energy of 2.32 eV, an excellent ability to absorb radiation, and a high electrical resistivity. For an application of PbI 2 as detector material the growth and characterisation of crystals with high chemical and structural quality is extremely challenging. In light of this, the effectiveness of zone purification of the PbI 2 used for crystal growth was confirmed by spectroscopic analysis. Furthermore, technological aspects during processing of purified PbI 2 were investigated. With the help of thermal analysis, a correlation was found between the degree of exposing the source material to oxygen from the air and the structural quality of the resulting crystals. A hydrogen treatment was applied to PbI 2 as an effective method for the removal of oxidic pollutions, which resulted in a significant reduction of structural defects like polytypic growth and stress-induced cracking. The growth of PbI 2 single crystals was, among others, carried out by the Bridgman-Stockbarger method. In this context, much effort was put on the investigation of influences resulting from the design and preparation of ampoules. For the first time, crystal growth of PbI 2 was also carried out by the Czochralski method. If compared to the Bridgman-Stockbarger method, the Czochralski technique allowed a significantly faster growth of nearly crack-free crystals with a reproducible predetermination of crystallographic orientation. By an optimised sample preparation of PbI 2 , surface orientations perpendicular to the usually cleaved (0001) plane were realised. It is now possible to determine the material properties along directions which were so far not accessible. Thus, for example, the ratio of
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Advances in the Growth and Characterization of Relaxor-PT-Based Ferroelectric Single Crystals
Directory of Open Access Journals (Sweden)
Jun Luo
2014-07-01
Full Text Available Compared to Pb(Zr1−xTixO3 (PZT polycrystalline ceramics, relaxor-PT single crystals offer significantly improved performance with extremely high electromechanical coupling and piezoelectric coefficients, making them promising materials for piezoelectric transducers, sensors and actuators. The recent advances in crystal growth and characterization of relaxor-PT-based ferroelectric single crystals are reviewed in this paper with emphases on the following topics: (1 the large crystal growth of binary and ternary relaxor-PT-based ferroelectric crystals for commercialization; (2 the composition segregation in the crystals grown from such a solid-solution system and possible solutions to reduce it; (3 the crystal growth from new binary and ternary compositions to expand the operating temperature and electric field; (4 the crystallographic orientation dependence and anisotropic behaviors of relaxor-PT-based ferroelectriccrystals; and (5 the characterization of the dielectric, elastic and piezoelectric properties of the relaxor-PT-based ferroelectriccrystals under small and large electric fields.
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Growth of rare-earth doped single crystal yttrium aluminum garnet fibers
Bera, Subhabrata; Nie, Craig D.; Harrington, James A.; Cheng, Long; Rand, Stephen C.; Li, Yuan; Johnson, Eric G.
2018-02-01
Rare-earth doped single crystal (SC) yttrium aluminum garnet (YAG) fibers have great potential as high-power laser gain media. SC fibers combine the superior material properties of crystals with the advantages of a fiber geometry. Improving processing techniques, growth of low-loss YAG SC fibers have been reported. A low-cost technique that allows for the growth of optical quality Ho:YAG single crystal (SC) fibers with different dopant concentrations have been developed and discussed. This technique is a low-cost sol-gel based method which offers greater flexibility in terms of dopant concentration. Self-segregation of Nd ions in YAG SC fibers have been observed. Such a phenomenon can be utilized to fabricate monolithic SC fibers with graded index.
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Study of photoluminescence from annealed bulk-ZnO single crystals
Energy Technology Data Exchange (ETDEWEB)
Yoneta, M.; Ohishi, M.; Saito, H. [Department of Applied Physics, Okayama University of Science, 1-1 Ridai-cho, Okayama 700-0005 (Japan); Yoshino, K. [Department of Electrical and Electronic Engineering, Miyazaki University, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192 (Japan); Honda, M. [Faculty of Science, Naruto University of Education, 748 Nakajima, Takashima, Naruto-cho, Naruto-shi 772-8502 (Japan)
2006-03-15
We have investigated the influence of rapid thermal annealing on the photoluminescence of bulk-ZnO single crystal. As-grown ZnO wafer, illuminated by 325 nm ultraviolet light at 4.2 K, emitted the visible luminescence of pale green centered of 2.29 eV. The luminescence was observed by the anneal at the temperature range between 400 C and 1000 C, however, its intensity decreased with anneal temperature. The free-exciton and the 2.18 eV emission line were obtained by the anneal at 1200 C for 60 sec. From the X-ray diffraction and the surface morphology measurements, the improvement of the crystallinity of bulk-ZnO crystal were confirmed. We suggest that a rapid thermal annealing technique is convenience to improve the the quality of bul-ZnO single crystals. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
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Synthesis and single crystal X-ray analysis of two griseofulvin metabolites
DEFF Research Database (Denmark)
Rønnest, Mads Holger; Harris, Pernille; Gotfredsen, Charlotte Held
2010-01-01
The two phenols, 6-O-desmethyl griseofulvin and 4-O-desmethyl griseofulvin are metabolites of the antifungal drug griseofulvin. Herein, we present an improved synthesis of the 6-phenol derivative, and an unequivocal proof of both structures by single-crystal X-ray analysis.......The two phenols, 6-O-desmethyl griseofulvin and 4-O-desmethyl griseofulvin are metabolites of the antifungal drug griseofulvin. Herein, we present an improved synthesis of the 6-phenol derivative, and an unequivocal proof of both structures by single-crystal X-ray analysis....
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Orientation dependence of the thermal fatigue of nickel alloy single crystals
Energy Technology Data Exchange (ETDEWEB)
Dul' nev, R A; Svetlov, I L; Bychkov, N G; Rybina, T V; Sukhanov, N N
1988-11-01
The orientation dependence of the thermal stability and the thermal fatigue fracture characteristics of single crystals of MAR-M200 nickel alloy are investigated experimentally using X-ray diffraction analysis and optical and scanning electron microscopy. It is found that specimens with the 111-line orientation have the highest thermal stability and fatigue strength. Under similar test conditions, the thermal fatigue life of single crystals is shown to be a factor of 1.5-2 higher than that of the directionally solidified and equiaxed alloys. 6 references.
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Ultralow Self-Doping in 2D Hybrid Perovskite Single Crystals
Peng, Wei; Yin, Jun; Ho, Kang-Ting; Ouellette, Olivier; de Bastiani, Michele; Banavoth, Murali; El Tall, Omar; Shen, Chao; Miao, Xiaohe; Pan, Jun; Alarousu, Erkki; He, Jr-Hau; Ooi, Boon S.; Mohammed, Omar F.; Sargent, Edward H.; Bakr, Osman
2017-01-01
-processed semiconductors, including hybrid perovskites, which are usually high in defects due to rapid crystallization. Here, we uncover extremely low self-doping concentrations in single crystals of (C6H5C2H4NH3)2PbI4･(CH3NH3PbI3)n-1 (n=1, 2, and 3)—over three orders
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Monte Carlo Modelling of Single-Crystal Diffuse Scattering from Intermetallics
Directory of Open Access Journals (Sweden)
Darren J. Goossens
2016-02-01
Full Text Available Single-crystal diffuse scattering (SCDS reveals detailed structural insights into materials. In particular, it is sensitive to two-body correlations, whereas traditional Bragg peak-based methods are sensitive to single-body correlations. This means that diffuse scattering is sensitive to ordering that persists for just a few unit cells: nanoscale order, sometimes referred to as “local structure”, which is often crucial for understanding a material and its function. Metals and alloys were early candidates for SCDS studies because of the availability of large single crystals. While great progress has been made in areas like ab initio modelling and molecular dynamics, a place remains for Monte Carlo modelling of model crystals because of its ability to model very large systems; important when correlations are relatively long (though still finite in range. This paper briefly outlines, and gives examples of, some Monte Carlo methods appropriate for the modelling of SCDS from metallic compounds, and considers data collection as well as analysis. Even if the interest in the material is driven primarily by magnetism or transport behaviour, an understanding of the local structure can underpin such studies and give an indication of nanoscale inhomogeneity.
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Single-Crystal Diffraction from Two-Dimensional Block Copolymer Arrays
International Nuclear Information System (INIS)
Stein, G. E.; Kramer, E. J.; Li, X.; Wang, J.
2007-01-01
The structure of oriented 2D block copolymer single crystals is characterized by grazing-incidence small-angle x-ray diffraction, demonstrating long-range sixfold orientational order. From line shape analysis of the higher-order Bragg diffraction peaks, we determine that translational order decays algebraically with a decay exponent η=0.2, consistent with the Kosterlitz-Thouless-Halperin-Nelson-Young theory for a 2D crystal with a shear modulus μ=2x10 -4 N/m
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The Taylor relation in compression deformed Ge single crystals
International Nuclear Information System (INIS)
Nyilas, K; Ungar, T; Dupas, C; Martin, J L; Kruml, T
2010-01-01
Ge single crystals are deformed in compression at 850K and the same strain rate to various extents of strains. In each sample, the internal stress is measured through stress reduction tests and the dislocation densities by X-ray measurements. Data about these two parameters follow fairly well the Taylor-Saada relation, provided a correction term is added. It probably corresponds to dislocations which are seen by X-rays, though they do not contribute to crystal hardening.
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Preparation of HfC single crystals by a floating zone technique
International Nuclear Information System (INIS)
Otani, S.; Tanaka, T.
1981-01-01
HfC single crystals have been prepared using a floating zone technique by controlling the compositions of the initial molten zone and the feed rod. The obtained crystal rods were 6 cm long and 0.9 cm in diameter. The various parts of the crystal rods have nearly constant compositions (C/Hf(ZR) = 0.956-0.977), and do not contain any free carbon. The impurities in the crystal, evaporation product, and starting material were examined by fluorescence X-ray spectroscopy. The refining effect due to evaporation was discussed. (orig.)
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Structural Characterization of Doped GaSb Single Crystals by X-ray Topography
Energy Technology Data Exchange (ETDEWEB)
Honnicke, M.G.; Mazzaro, I.; Manica, J.; Benine, E.; M da Costa, E.; Dedavid, B. A.; Cusatis, C.; Huang, X. R.
2009-09-13
We characterized GaSb single crystals containing different dopants (Al, Cd and Te), grown by the Czochralski method, by x-ray topography and high angular resolution x-ray diffraction. Lang topography revealed dislocations parallel and perpendicular to the crystal's surface. Double-crystal GaSb 333 x-ray topography shows dislocations and vertical stripes than can be associated with circular growth bands. We compared our high-angular resolution x-ray diffraction measurements (rocking curves) with the findings predicted by the dynamical theory of x-ray diffraction. These measurements show that our GaSb single crystals have a relative variation in the lattice parameter ({Delta}d/d) on the order of 10{sup -5}. This means that they can be used as electronic devices (detectors, for example) and as x-ray monochromators.
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Room Temperature Ultralow Threshold GaN Nanowire Polariton Laser
Das, Ayan
2011-08-01
We report ultralow threshold polariton lasing from a single GaN nanowire strongly coupled to a large-area dielectric microcavity. The threshold carrier density is 3 orders of magnitude lower than that of photon lasing observed in the same device, and 2 orders of magnitude lower than any existing room-temperature polariton devices. Spectral, polarization, and coherence properties of the emission were measured to confirm polariton lasing. © 2011 American Physical Society.
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Twinning behavior in the Ti-5at.% Al single crystals during cyclic loading along [0001
International Nuclear Information System (INIS)
Xiao Lin
2005-01-01
Cyclic deformation behavior of Ti-5at.% Al single crystals subjected to pull-push cyclic load along [0001] crystallographic orientation was studied. A higher cyclic stress response was displayed in the Ti-5Al single crystal oriented for [0001] than that oriented for single prism slip. Optical microscopy and transmission electron microscopy examinations show that twinning is a dominant plastic deformation mode in the single crystals during cycling. Trace analysis of prepolished surfaces was used to identify the twin systems primarily responsible for deformation. The major twin type observed was {101-bar 2}, {112-bar 2}, {101-bar 1} and {112-bar 1}. slip was observed in the neighboring region of twins in the fatigued specimens. The activation of multiple twinning systems contributed to the higher cyclic saturation stress in Ti-5Al single crystals oriented for [0001
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A High-Rate, Single-Crystal Model including Phase Transformations, Plastic Slip, and Twinning
Energy Technology Data Exchange (ETDEWEB)
Addessio, Francis L. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Theoretical Division; Bronkhorst, Curt Allan [Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Theoretical Division; Bolme, Cynthia Anne [Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Explosive Science and Shock Physics Division; Brown, Donald William [Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Materials Science and Technology Division; Cerreta, Ellen Kathleen [Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Materials Science and Technology Division; Lebensohn, Ricardo A. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Materials Science and Technology Division; Lookman, Turab [Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Theoretical Division; Luscher, Darby Jon [Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Theoretical Division; Mayeur, Jason Rhea [Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Theoretical Division; Morrow, Benjamin M. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Materials Science and Technology Division; Rigg, Paulo A. [Washington State Univ., Pullman, WA (United States). Dept. of Physics. Inst. for Shock Physics
2016-08-09
An anisotropic, rate-dependent, single-crystal approach for modeling materials under the conditions of high strain rates and pressures is provided. The model includes the effects of large deformations, nonlinear elasticity, phase transformations, and plastic slip and twinning. It is envisioned that the model may be used to examine these coupled effects on the local deformation of materials that are subjected to ballistic impact or explosive loading. The model is formulated using a multiplicative decomposition of the deformation gradient. A plate impact experiment on a multi-crystal sample of titanium was conducted. The particle velocities at the back surface of three crystal orientations relative to the direction of impact were measured. Molecular dynamics simulations were conducted to investigate the details of the high-rate deformation and pursue issues related to the phase transformation for titanium. Simulations using the single crystal model were conducted and compared to the high-rate experimental data for the impact loaded single crystals. The model was found to capture the features of the experiments.
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International Nuclear Information System (INIS)
Agamaliyev, Z.A.; Tahirov, V.I.; Hasanov, Z.Y.; Quliyev, A.F.
2007-01-01
A binary solid solution single crystal growth method has been worked out. Cylinder feeding alloy with complex content distribution and truncated cone crucible are used. Second component distribution coefficient is more than unit. Content distribution along grown crystal is found by solving continuity equation. After reaching dynamic equilibrium state second component concentration in grown crystal is saturated the value of which is less than the average ona in the feeding alloy. Using the method Ge-Si perfect single crystals has been grown. Calculation method of melt surface displacement velocity has been offered as well
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Lu, Yi; Kondo, Hiroki; Ishikawa, Kenji; Oda, Osamu; Takeda, Keigo; Sekine, Makoto; Amano, Hiroshi; Hori, Masaru
2014-04-01
Gallium nitride (GaN) films have been grown by using our newly developed Radical-Enhanced Metalorganic Chemical Vapor Deposition (REMOCVD) system. This system has three features: (1) application of very high frequency (60 MHz) power in order to increase the plasma density, (2) introduction of H2 gas together with N2 gas in the plasma discharge region to generate not only nitrogen radicals but also active NHx molecules, and (3) radical supply under remote plasma arrangement with suppression of charged ions and photons by employing a Faraday cage. Using this new system, we have studied the effect of the trimethylgallium (TMG) source flow rate and of the plasma generation power on the GaN crystal quality by using scanning electron microscopy (SEM) and double crystal X-ray diffraction (XRD). We found that this REMOCVD allowed the growth of epitaxial GaN films of the wurtzite structure of (0001) orientation on sapphire substrates with a high growth rate of 0.42 μm/h at a low temperature of 800 °C. The present REMOCVD is a promising method for GaN growth at relatively low temperature and without using costly ammonia gas.
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Characteristics of trapped electrons and electron traps in single crystals
International Nuclear Information System (INIS)
Budzinski, E.E.; Potter, W.R.; Potienko, G.; Box, H.C.
1979-01-01
Two additional carbohydrates are reported whose crystal structures trap electrons intermolecularly in single crystals x irradiated at low temperature, namely sucrose and rhamnose. Five carbohydrate and polyhydroxy compounds are now known which exhibit this phenomenon. The following characteristics of the phenomenon were investigated: (1) the hyperfine couplings of the electron with protons of the polarized hydroxy groups forming the trap; (2) the distances between these protons and the trapped electron; (3) the spin density of the electron at the protons and (4) the relative stabilities of the electron trapped in various crystal structures
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Probing the crossover in CO desorption from single crystal to nanoparticulate Ru model catalysts
DEFF Research Database (Denmark)
Murphy, Shane; Strebel, Christian Ejersbo; Vendelbo, Søren Bastholm
2011-01-01
Crossover in CO desorption behavior and nanoscale structure probed with STM from ruthenium single crystals to PVD and mass-selected nanoparticles.......Crossover in CO desorption behavior and nanoscale structure probed with STM from ruthenium single crystals to PVD and mass-selected nanoparticles....
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Non-destructive local determination of doping additions and main components in single crystals
International Nuclear Information System (INIS)
Ehksperiandova, L.P.; Blank, A.B.; Kukhtina, N.N.; Afanasiadi, L.I.
1994-01-01
Procedures for local non-destructive determination of elements in optical and scintillation single crystals are developed. They are applied for determination of the main components (in cadmium tungstate) and doping additions (tellurium in zinc selenide, europium in gadolinium silicate). The metrological characteristics of the developed micro-analysis methods are estimated. Segregation of the main components and doping additions in the objects under consideration are investigated. Tellurium is found to be distributed uniformly on the cross-sections of bulk zinc selenide single crystals. The segregation of europium along gadolinium silicate ingots is almost absent. On the cross-section surface of cadmium tungstate single crystals the microregions are found characterized by the prevailing contents of cadmium or tungsten
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Low trap-state density and long carrier diffusion in organolead trihalide perovskite single crystals
Shi, Dong
2015-01-29
The fundamental properties and ultimate performance limits of organolead trihalide MAPbX3(MA = CH3NH3 +; X = Br- or I- ) perovskites remain obscured by extensive disorder in polycrystalline MAPbX3 films. We report an antisolvent vapor-assisted crystallization approach that enables us to create sizable crack-free MAPbX3 single crystals with volumes exceeding 100 cubic millimeters. These large single crystals enabled a detailed characterization of their optical and charge transport characteristics.We observed exceptionally low trap-state densities on the order of 109 to 1010 per cubic centimeter in MAPbX3 single crystals (comparable to the best photovoltaic-quality silicon) and charge carrier diffusion lengths exceeding 10 micrometers. These results were validated with density functional theory calculations.
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Low trap-state density and long carrier diffusion in organolead trihalide perovskite single crystals
Shi, Dong; Adinolfi, Valerio; Comin, Riccardo; Yuan, Mingjian; Alarousu, Erkki; Buin, Andrei K.; Chen, Yin; Hoogland, Sjoerd H.; Rothenberger, Alexander; Katsiev, Khabiboulakh; Losovyj, Yaroslav B.; Zhang, Xin; Dowben, Peter A.; Mohammed, Omar F.; Sargent, E. H.; Bakr, Osman
2015-01-01
The fundamental properties and ultimate performance limits of organolead trihalide MAPbX3(MA = CH3NH3 +; X = Br- or I- ) perovskites remain obscured by extensive disorder in polycrystalline MAPbX3 films. We report an antisolvent vapor-assisted crystallization approach that enables us to create sizable crack-free MAPbX3 single crystals with volumes exceeding 100 cubic millimeters. These large single crystals enabled a detailed characterization of their optical and charge transport characteristics.We observed exceptionally low trap-state densities on the order of 109 to 1010 per cubic centimeter in MAPbX3 single crystals (comparable to the best photovoltaic-quality silicon) and charge carrier diffusion lengths exceeding 10 micrometers. These results were validated with density functional theory calculations.
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StackGAN++: Realistic Image Synthesis with Stacked Generative Adversarial Networks
Zhang, Han; Xu, Tao; Li, Hongsheng; Zhang, Shaoting; Wang, Xiaogang; Huang, Xiaolei; Metaxas, Dimitris
2017-01-01
Although Generative Adversarial Networks (GANs) have shown remarkable success in various tasks, they still face challenges in generating high quality images. In this paper, we propose Stacked Generative Adversarial Networks (StackGAN) aiming at generating high-resolution photo-realistic images. First, we propose a two-stage generative adversarial network architecture, StackGAN-v1, for text-to-image synthesis. The Stage-I GAN sketches the primitive shape and colors of the object based on given...
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Multiphysical simulation analysis of the dislocation structure in germanium single crystals
Podkopaev, O. I.; Artemyev, V. V.; Smirnov, A. D.; Mamedov, V. M.; Sid'ko, A. P.; Kalaev, V. V.; Kravtsova, E. D.; Shimanskii, A. F.
2016-09-01
To grow high-quality germanium crystals is one of the most important problems of growth industry. The dislocation density is an important parameter of the quality of single crystals. The dislocation densities in germanium crystals 100 mm in diameter, which have various shapes of the side surface and are grown by the Czochralski technique, are experimentally measured. The crystal growth is numerically simulated using heat-transfer and hydrodynamics models and the Alexander-Haasen dislocation model in terms of the CGSim software package. A comparison of the experimental and calculated dislocation densities shows that the dislocation model can be applied to study lattice defects in germanium crystals and to improve their quality.
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Spectroscopic and crystallographic studies of YAG:Pr4+ single crystals
International Nuclear Information System (INIS)
Pawlak, D.; Frukacz, Z.; Mierczyk, Z.; Suchocki, A.; Zachara, J.
1998-01-01
Y 3 Al 5 O 12 single crystals doped with praseodymium and magnesium ions have been prepared. The reversible color change of this crystal is observed when annealing in oxidizing or reducing atmospheres. The change is ascribed to the formation of Pr 4+ in the as-grown crystal, caused by the second dopant, Mg 2+ . The absorption spectra of YAG:Pr,Mg in the range 200-1100 nm, as grown and annealed in air and H 2 /N 2 atmosphere, are presented and discussed. Additional broad absorption bands are observed for the as-grown crystals and those annealed in oxidizing atmosphere. Crystallographic investigations of the original crystal and after annealing in a reducing atmosphere as described above, show no distinct structural differences. A redox mechanism is proposed to explain the color change during annealing. (orig.)
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Growth of tourmaline single crystals containing transition metal elements in hydrothermal solutions
Setkova, Tatiana; Shapovalov, Yury; Balitsky, Vladimir
2011-03-01
Interest in the growth of tourmaline single crystals is based on the promising piezoelectric and pyroelectric properties of this material compared to quartz crystals currently in use. Moreover, synthetic tourmaline can be used as a substitute for the natural stone in the jewelry industry similar to other synthetic analogues of gemstones. Single crystals of colored Co-, Ni-, Fe-, (Ni,Cr)-, (Ni,Fe)-, and (Co,Ni,Cr)-containing tourmalines with concentration of transition metal elements up to 16 wt% on a seed have been grown from complex boron-containing hydrothermal solutions at a range of temperatures 400-750 °C and pressures 100 MPa. Experiments were conducted under conditions of a thermal gradient in titanium and chromium-nickel autoclaves. Tourmaline growth on a seed crystal occurs only if separate tourmaline-forming components (monocrystalline corundum and quartz bars) are used as charge. All tourmalines specified above grow in analogous (+) direction of the optical axis with a speed of 0.05 mm/day by faces of the trigonal pyramid, except tourmalines containing chromium. They grow in analogous (+0001) direction with a speed 0.05 mm/day, and in antilogous (-0001) direction with a speed of 0.01 mm/day by faces of the trigonal pyramid and in prism direction with a speed of 0.001 mm/day. Along with the large single crystals, a great amount of finest (30-150 μm in size) tourmaline crystals was formed during the runs by spontaneous nucleation both on the surface of the seed crystals and in the charge.
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Babu Rao, G.; P., Rajesh; Ramasamy, P.
2018-04-01
The 0.1 mol% amaranth added KAP single crystals were grown from aqueous solutions by both slow evaporation solution technique and Sankaranarayanan-Ramasamy method. The single crystal having dimension of 45 mm length and 12 mm diameter was grown with growth rate of 1.5 mm/day using SR method. 87 % transmittance is obtained for SR method grown amaranth added KAP single crystal. The high intense luminescence at 661 nm is obtained from amaranth added conventional and SR method grown KAP single crystal. The amaranth added KAP single crystal possesses good mechanical and laser damage threshold stability.
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Computational Modeling of Photonic Crystal Microcavity Single-Photon Emitters
Saulnier, Nicole A.
Conventional cryptography is based on algorithms that are mathematically complex and difficult to solve, such as factoring large numbers. The advent of a quantum computer would render these schemes useless. As scientists work to develop a quantum computer, cryptographers are developing new schemes for unconditionally secure cryptography. Quantum key distribution has emerged as one of the potential replacements of classical cryptography. It relics on the fact that measurement of a quantum bit changes the state of the bit and undetected eavesdropping is impossible. Single polarized photons can be used as the quantum bits, such that a quantum system would in some ways mirror the classical communication scheme. The quantum key distribution system would include components that create, transmit and detect single polarized photons. The focus of this work is on the development of an efficient single-photon source. This source is comprised of a single quantum dot inside of a photonic crystal microcavity. To better understand the physics behind the device, a computational model is developed. The model uses Finite-Difference Time-Domain methods to analyze the electromagnetic field distribution in photonic crystal microcavities. It uses an 8-band k · p perturbation theory to compute the energy band structure of the epitaxially grown quantum dots. We discuss a method that combines the results of these two calculations for determining the spontaneous emission lifetime of a quantum dot in bulk material or in a microcavity. The computational models developed in this thesis are used to identify and characterize microcavities for potential use in a single-photon source. The computational tools developed are also used to investigate novel photonic crystal microcavities that incorporate 1D distributed Bragg reflectors for vertical confinement. It is found that the spontaneous emission enhancement in the quasi-3D cavities can be significantly greater than in traditional suspended slab
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Goumri-Said, Souraya
2013-05-31
Sr3GaN3 and Sr6GaN5 could be promising potential materials for applications in the microelectronics, optoelectronics and coating materials areas of research. We studied in detail their structural, elastic, electronic, optical as well as the vibrational properties, by means of density functional theory framework. Both of these ternaries are semiconductors, where Sr3GaN3 exhibits a small indirect gap whereas Sr6GaN5 has a large direct gap. Indeed, their optical properties are reported for radiation up to 40 eV. Charge densities contours, Hirshfeld and Mulliken populations, are reported to investigate the role of each element in the bonding. From the mechanical properties calculation, it is found that Sr6GaN5 is harder than Sr3GaN3, and the latter is more anisotropic than the former. The phonon dispersion relation, density of phonon states and the vibrational stability are reported from the density functional perturbation theory calculations. © 2013 IOP Publishing Ltd.