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Sample records for gaas including surface

  1. On the modelling of semi-insulating GaAs including surface tension and bulk stresses

    Energy Technology Data Exchange (ETDEWEB)

    Dreyer, W.; Duderstadt, F.

    2004-07-01

    Necessary heat treatment of single crystal semi-insulating Gallium Arsenide (GaAs), which is deployed in micro- and opto- electronic devices, generate undesirable liquid precipitates in the solid phase. The appearance of precipitates is influenced by surface tension at the liquid/solid interface and deviatoric stresses in the solid. The central quantity for the description of the various aspects of phase transitions is the chemical potential, which can be additively decomposed into a chemical and a mechanical part. In particular the calculation of the mechanical part of the chemical potential is of crucial importance. We determine the chemical potential in the framework of the St. Venant-Kirchhoff law which gives an appropriate stress/strain relation for many solids in the small strain regime. We establish criteria, which allow the correct replacement of the St. Venant-Kirchhoff law by the simpler Hooke law. The main objectives of this study are: (i) We develop a thermo-mechanical model that describes diffusion and interface motion, which both are strongly influenced by surface tension effects and deviatoric stresses. (ii) We give an overview and outlook on problems that can be posed and solved within the framework of the model. (iii) We calculate non-standard phase diagrams, i.e. those that take into account surface tension and non-deviatoric stresses, for GaAs above 786 C, and we compare the results with classical phase diagrams without these phenomena. (orig.)

  2. Scanning tunneling microscopy study of GaAs(001) surfaces

    Science.gov (United States)

    Xue, Qi-Kun; Hashizume, T.; Sakurai, T.

    1999-03-01

    While GaAs(001) is the most commonly used substrate in fabrication of wireless and opto-electronic devices based on III-V compound semiconductors by molecular beam epitaxy (MBE), metallorganic chemical vapor deposition (MOCVD) and related techniques, its surface structure have been disputed since the beginning of development of the techniques. Invention of scanning tunneling microscopy (STM) has revolutionized the approach of surface/interface investigation, contributing greatly in the atomistic understanding of the GaAs surface phases. This paper reviews the STM studies of principal reconstructions, from As-rich c(4×4), 2×4, 2×6 to Ga-rich 4×2 and 4×6, found on the GaAs (001) surface. These studies, together with advanced theoretical efforts, have helped us to establish a unified structural model for various reconstructions, with which we can now explain most of the observations and long-standing controversies in atomic structures and surface stoichiometries.

  3. Monolithic GaAs surface acoustic wave chemical microsensor array

    Energy Technology Data Exchange (ETDEWEB)

    HIETALA,VINCENT M.; CASALNUOVO,STEPHEN A.; HELLER,EDWIN J.; WENDT,JOEL R.; FRYE-MASON,GREGORY CHARLES; BACA,ALBERT G.

    2000-03-09

    A four-channel surface acoustic wave (SAW) chemical sensor array with associated RF electronics is monolithically integrated onto one GaAs IC. The sensor operates at 690 MHz from an on-chip SAW based oscillator and provides simple DC voltage outputs by using integrated phase detectors. This sensor array represents a significant advance in microsensor technology offering miniaturization, increased chemical selectivity, simplified system assembly, improved sensitivity, and inherent temperature compensation.

  4. Surface science analysis of GaAs photocathodes following sustained electron beam delivery

    Directory of Open Access Journals (Sweden)

    V. Shutthanandan

    2012-06-01

    Full Text Available Degradation of the photocathode materials employed in photoinjectors represents a challenge for sustained operation of nuclear physics accelerators and high power free electron lasers (FEL. Photocathode quantum efficiency degradation is due to residual gases in the electron source vacuum system being ionized and accelerated back to the photocathode. These investigations are a first attempt to characterize the nature of the photocathode degradation, and employ multiple surface and bulk analysis techniques to investigate damage mechanisms including sputtering of the Cs-oxidant surface monolayer, other surface chemistry effects, and ion implantation. Surface and bulk analysis studies were conducted on two GaAs photocathodes, which were removed from the JLab FEL DC photoemission gun after delivering electron beam, and two control samples. The analysis techniques include helium ion microscopy, Rutherford backscattering spectrometry (RBS, atomic force microscopy, and secondary ion mass spectrometry (SIMS. In addition, two high-polarization strained superlattice GaAs photocathode samples, one removed from the continuous electron beam accelerator facility (CEBAF photoinjector and one unused, were also analyzed using transmission electron microscopy (TEM and SIMS. It was found that heat cleaning the FEL GaAs wafer introduces surface roughness, which seems to be reduced by prolonged use. The bulk GaAs samples retained a fairly well organized crystalline structure after delivering beam but show evidence of Cs depletion on the surface. Within the precision of the SIMS and RBS measurements, the data showed no indication of hydrogen implantation or lattice damage from ion back bombardment in the bulk GaAs wafers. In contrast, SIMS and TEM measurements of the strained superlattice photocathode show clear crystal damage in the wafer from ion back bombardment.

  5. Surface science analysis of GaAs photocathodes following sustained electron beam delivery

    Energy Technology Data Exchange (ETDEWEB)

    Carlos Hernandez-Garcia, Fay Hannon, Marcy Stutzman, V. Shutthanandan, Z. Zhu, M. Nandasri, S. V. Kuchibhatla, S. Thevuthasan, W. P. Hess

    2012-06-01

    Degradation of the photocathode materials employed in photoinjectors represents a challenge for sustained operation of nuclear physics accelerators and high power Free Electron Lasers (FEL). Photocathode quantum efficiency (QE) degradation is due to residual gasses in the electron source vacuum system being ionized and accelerated back to the photocathode. These investigations are a first attempt to characterize the nature of the photocathode degradation, and employ multiple surface and bulk analysis techniques to investigate damage mechanisms including sputtering of the Cs-oxidant surface monolayer, other surface chemistry effects, and ion implantation. Surface and bulk analysis studies were conducted on two GaAs photocathodes, which were removed from the JLab FEL DC photoemission gun after delivering electron beam, and two control samples. The analysis techniques include Helium Ion Microscopy (HIM), Rutherford Backscattering Spectrometry (RBS), Atomic Force Microscopy (AFM) and Secondary Ion Mass Spectrometry (SIMS). In addition, two high-polarization strained superlattice GaAs photocathode samples, one removed from the Continuous Electron Beam Accelerator Facility (CEBAF) photoinjector and one unused, were also analyzed using Transmission Electron Microscopy (TEM) and SIMS. It was found that heat cleaning the FEL GaAs wafer introduces surface roughness, which seems to be reduced by prolonged use. The bulk GaAs samples retained a fairly well organized crystalline structure after delivering beam but shows evidence of Cs depletion on the surface. Within the precision of the SIMS and RBS measurements the data showed no indication of hydrogen implantation or lattice damage from ion back bombardment in the bulk GaAs wafers. In contrast, SIMS and TEM measurements of the strained superlattice photocathode show clear crystal damage in the wafer from ion back bombardment.

  6. Low-energy particle treatment of GaAs surface

    International Nuclear Information System (INIS)

    Pincik, E.; Ivanco, J.; Brunner, R.; Jergel, M.; Falcony, C.; Ortega, L.; Kucera, J. M.

    2002-01-01

    The paper presents results of a complex study of surface properties of high-doped (2x10 18 cm -3 ) and semi-insulating GaAs after an interaction with the particles coming from low-energy ion sources such as RF plasma and ion beams. The virgin samples were mechano-chemically polished liquid-encapsulated Czochralski-grown GaAs (100) oriented wafers. The crystals were mounted on the grounded electrode (holder). The mixture Ar+H 2 as well as O 2 and CF 4 were used as working gases: In addition, a combination of two different in-situ exposures was applied, such as e.g. hydrogen and oxygen. Structural, electrical and optical properties of the exposed surfaces were investigated using X-ray diffraction at grazing incidence, quasi-static and high-frequency C-V curve measurements, deep-level transient spectroscopy, photo-reflectance, and photoluminescence. Plasma and ion beam exposures were performed in a commercial RF capacitively coupled plasma equipment SECON XPL-200P and a commercial LPAI device, respectively. The evolution of surface properties as a function of the pressure of working gas and the duration of exposure was observed. (Authors)

  7. The apparent effect of sample surface damage on the dielectric parameters of GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Engelbrecht, J.A.A. [Physics Department, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)], E-mail: Japie.Engelbrecht@nmmu.ac.za; Hashe, N.G. [Physics Department, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Hillie, K.T. [CSIR-NML Laboratory, P.O. Box 395, Pretoria 0001 (South Africa); Claassens, C.H. [Physics Department, University of the Free State, Bloemfontein 9300 (South Africa)

    2007-12-15

    The dielectric and optical parameters determined by infrared reflectance spectroscopy and computer simulation of a set of GaAs substrates of various surface topologies are reported. The influence of surface damage on the parameters is noted.

  8. The apparent effect of sample surface damage on the dielectric parameters of GaAs

    International Nuclear Information System (INIS)

    Engelbrecht, J.A.A.; Hashe, N.G.; Hillie, K.T.; Claassens, C.H.

    2007-01-01

    The dielectric and optical parameters determined by infrared reflectance spectroscopy and computer simulation of a set of GaAs substrates of various surface topologies are reported. The influence of surface damage on the parameters is noted

  9. Structural analysis of the indium-stabilized GaAs(001)-c(8×2) surface

    DEFF Research Database (Denmark)

    Lee, T.-L.; Kumpf, C.; Kazimirov, A.

    2002-01-01

    The indium-stabilized GaAs(001)-c(8x2) surface was investigated by surface x-ray diffraction and x-ray standing waves. We find that the reconstruction closely resembles the c(8x2) structure described by the recently proposed unified model for clean III-V semiconductor surfaces [Kumpf , Phys. Rev....

  10. Origin of Fermi-level pinning at GaAs surfaces and interfaces

    Science.gov (United States)

    Colleoni, Davide; Miceli, Giacomo; Pasquarello, Alfredo

    2014-12-01

    Through first-principles simulation methods, we assign the origin of Fermi-level pinning at GaAs surfaces and interfaces to the bistability between the As-As dimer and two As dangling bonds, which transform into each other upon charge trapping. This defect is shown to be naturally formed both at GaAs surfaces upon oxygen deposition and in the near-interface substoichiometric oxide. Using electron-counting arguments, we infer that the identified defect occurs in opposite charge states. The Fermi-level pinning then results from the amphoteric nature of this defect which drives the Fermi level to its defect level. These results account for the experimental characterization at both GaAs surfaces and interfaces within a unified picture, wherein the role of As antisites is elucidated.

  11. Multilayer self-organization of InGaAs quantum wires on GaAs surfaces

    International Nuclear Information System (INIS)

    Wang, Zhiming M.; Kunets, Vasyl P.; Xie, Yanze Z.; Schmidbauer, Martin; Dorogan, Vitaliy G.; Mazur, Yuriy I.; Salamo, Gregory J.

    2010-01-01

    Molecular-Beam Epitaxy growth of multiple In 0.4 Ga 0.6 As layers on GaAs (311)A and GaAs (331)A has been investigated by Atomic Force Microscopy and Photoluminescence. On GaAs (311)A, uniformly distributed In 0.4 Ga 0.6 As quantum wires (QWRs) with wider lateral separation were achieved, presenting a significant improvement in comparison with the result on single layer [H. Wen, Z.M. Wang, G.J. Salamo, Appl. Phys. Lett. 84 (2004) 1756]. On GaAs (331)A, In 0.4 Ga 0.6 As QWRs were revealed to be much straighter than in the previous report on multilayer growth [Z. Gong, Z. Niu, Z. Fang, Nanotechnology 17 (2006) 1140]. These observations are discussed in terms of the strain-field interaction among multilayers, enhancement of surface mobility at high temperature, and surface stability of GaAs (311)A and (331)A surfaces.

  12. Enhanced charge recombination due to surfaces and twin defects in GaAs nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Brown, Evan; Sheng, Chunyang; Nakano, Aiichiro [Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089-0242 (United States); Shimamura, Kohei; Shimojo, Fuyuki [Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089-0242 (United States); Department of Physics, Kumamoto University, Kumamoto 860-8555 (Japan)

    2015-02-07

    Power conversion efficiency of gallium arsenide (GaAs) nanowire (NW) solar cells is severely limited by enhanced charge recombination (CR) at sidewall surfaces, but its atomistic mechanisms are not well understood. In addition, GaAs NWs usually contain a high density of twin defects that form a twin superlattice, but its effects on CR dynamics are largely unknown. Here, quantum molecular dynamics (QMD) simulations reveal the existence of an intrinsic type-II heterostructure at the (110) GaAs surface. Nonadiabatic quantum molecular dynamics (NAQMD) simulations show that the resulting staggered band alignment causes a photoexcited electron in the bulk to rapidly transfer to the surface. We have found orders-of-magnitude enhancement of the CR rate at the surface compared with the bulk value. Furthermore, QMD and NAQMD simulations show unique surface electronic states at alternating (111)A and (111)B sidewall surfaces of a twinned [111]-oriented GaAs NW, which act as effective CR centers. The calculated large surface recombination velocity quantitatively explains recent experimental observations and provides microscopic understanding of the underlying CR processes.

  13. A new structure for comparing surface passivation materials of GaAs solar cells

    Science.gov (United States)

    Desalvo, Gregory C.; Barnett, Allen M.

    1989-01-01

    The surface recombination velocity (S sub rec) for bare GaAs is typically as high as 10 to the 6th power to 10 to the 7th power cm/sec, which dramatically lowers the efficiency of GaAs solar cells. Early attempts to circumvent this problem by making an ultra thin junction (xj less than .1 micron) proved unsuccessful when compared to lowering S sub rec by surface passivation. Present day GaAs solar cells use an GaAlAs window layer to passivate the top surface. The advantages of GaAlAs in surface passivation are its high bandgap energy and lattice matching to GaAs. Although GaAlAs is successful in reducing the surface recombination velocity, it has other inherent problems of chemical instability (Al readily oxidizes) and ohmic contact formation. The search for new, more stable window layer materials requires a means to compare their surface passivation ability. Therefore, a device structure is needed to easily test the performance of different passivating candidates. Such a test device is described.

  14. Block copolymer-templated chemistry on Si, Ge, InP, and GaAs surfaces.

    Science.gov (United States)

    Aizawa, Masato; Buriak, Jillian M

    2005-06-29

    Patterning of semiconductor surfaces is an area of intense interest, not only for technological applications, such as molecular electronics, sensing, cellular recognition, and others, but also for fundamental understanding of surface reactivity, general control over surface properties, and development of new surface reactivity. In this communication, we describe the use of self-assembling block copolymers to direct semiconductor surface chemistry in a spatially defined manner, on the nanoscale. The proof-of-principle class of reactions evaluated here is galvanic displacement, in which a metal ion, M+, is reduced to M0 by the semiconductor, including Si, Ge, InP, and GaAs. The block copolymer chosen has a polypyridine block which binds to the metal ions and brings them into close proximity with the surface, at which point they undergo reaction; the pattern of resulting surface chemistry, therefore, mirrors the nanoscale structure of the parent block copolymer. This chemistry has the added advantage of forming metal nanostructures that result in an alloy or intermetallic at the interface, leading to strongly bound metal nanoparticles that may have interesting electronic properties. This approach has been shown to be very general, functioning on a variety of semiconductor substrates for both silver and gold deposition, and is being extended to organic and inorganic reactions on a variety of conducting, semiconducting, and insulating substrates.

  15. Study on the GaAs(110) surface using emitted atom spectrometry

    International Nuclear Information System (INIS)

    Gayone, J.E.; Sanchez, E.A.; Grizzi, O.; Universidad Nacional de Cuyo, Mendoza

    1998-01-01

    The facilities implemented at Bariloche for the ion scattering spectrometry is described, and recent examples of the technique application to determine the atomic structure and the composition of metallic and semiconductor surfaces, pure and with different adsorbates. The surface analysis technique using emitted atom spectrometry is discussed. The sensitivity to the GaAs(110) surface atomic relaxation is presented, and the kinetic of hydrogen adsorption by the mentioned surface is studied

  16. The influence of surfaces on the transient terahertz conductivity and electron mobility of GaAs nanowires

    International Nuclear Information System (INIS)

    Joyce, Hannah J; Baig, Sarwat A; Parkinson, Patrick; Davies, Christopher L; Boland, Jessica L; Herz, Laura M; Johnston, Michael B; Tan, H Hoe; Jagadish, Chennupati

    2017-01-01

    Bare unpassivated GaAs nanowires feature relatively high electron mobilities (400–2100 cm 2 V −1 s −1 ) and ultrashort charge carrier lifetimes (1–5 ps) at room temperature. These two properties are highly desirable for high speed optoelectronic devices, including photoreceivers, modulators and switches operating at microwave and terahertz frequencies. When engineering these GaAs nanowire-based devices, it is important to have a quantitative understanding of how the charge carrier mobility and lifetime can be tuned. Here we use optical-pump–terahertz-probe spectroscopy to quantify how mobility and lifetime depend on the nanowire surfaces and on carrier density in unpassivated GaAs nanowires. We also present two alternative frameworks for the analysis of nanowire photoconductivity: one based on plasmon resonance and the other based on Maxwell–Garnett effective medium theory with the nanowires modelled as prolate ellipsoids. We find the electron mobility decreases significantly with decreasing nanowire diameter, as charge carriers experience increased scattering at nanowire surfaces. Reducing the diameter from 50 nm to 30 nm degrades the electron mobility by up to 47%. Photoconductivity dynamics were dominated by trapping at saturable states existing at the nanowire surface, and the trapping rate was highest for the nanowires of narrowest diameter. The maximum surface recombination velocity, which occurs in the limit of all traps being empty, was calculated as 1.3  ×  10 6 cm s −1 . We note that when selecting the optimum nanowire diameter for an ultrafast device, there is a trade-off between achieving a short lifetime and a high carrier mobility. To achieve high speed GaAs nanowire devices featuring the highest charge carrier mobilities and shortest lifetimes, we recommend operating the devices at low charge carrier densities. (paper)

  17. Investigation of GaAs and InP surface passivation phenomena by sulfur; Badanie zjawiska pasywacji powierzchni GaAs i InP przy pomocy siarki

    Energy Technology Data Exchange (ETDEWEB)

    Przyborowska, K.; Surma, B. [Instytut Technologii Materialow Elektronicznych, Warsaw (Poland); Zakroczymski, T. [Polska Akademia Nauk, Warsaw (Poland). Inst. Chemii Fizycznej

    1997-12-01

    Some different chemical methods for sulfur passivation of GaAs and InP surface have been tried. The photoluminescence intensity has been compared for surfaces being sulfurized in different processes. Surface composition have been analysed by means of Auger electron spectroscopy. It has been found that passivation by sulfur of A{sup III}B{sup V} compounds diminishes the concentration of surface states and can be applied for preparing the epi-ready plates. 5 refs, 3 figs.

  18. Ab initio study of atomic disorder on as-rich GaAs(111)A surface

    Czech Academy of Sciences Publication Activity Database

    Romanyuk, Olexandr; Mutombo, Pingo; Grosse, F.

    2015-01-01

    Roč. 641, Nov (2015), s. 330-335 ISSN 0039-6028 R&D Projects: GA ČR GPP204/10/P028 Grant - others:AVČR(CZ) M100101201 Institutional support: RVO:68378271 Keywords : GaAs(111) * surface reconstructions * surface kinetics * density functional theory Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.931, year: 2015

  19. Theoretical investigation of phase transition on GaAs(0 0 1)-c(4 x 4) surface

    International Nuclear Information System (INIS)

    Ishizaki, Hirotoshi; Akiyama, Toru; Nakamura, Kohji; Shiraishi, Kenji; Taguchi, Akihito; Ito, Tomonori

    2005-01-01

    The surface phase transition between GaAs(0 0 1)-c(4 x 4) and -(2 x 4)β2 surfaces is systematically investigated by using our ab initio-based approach. The phase diagram calculations for the c(4 x 4) surfaces as functions of temperature and As pressure reveal that three kinds of c(4 x 4) surfaces consisting of Ga-As dimers and/or Ga-Ga dimers become stable near the phase transition temperature. The electron counting Monte Carlo simulation and ab initio calculations are also performed to investigate the structural change of the c(4 x 4) surface after predepositing a 0.5 monolayer of Ga on the three kinds of c(4 x 4) surfaces. The calculated results suggest that the c(4 x 4) surfaces consisting of three Ga-As dimers or one Ga-Ga dimer and two Ga-As dimers in the (4 x 4) surface unit cell possibly change their structures to (2 x 4)β2 structures with Ga-As surface dimers. The conventional (2 x 4)β2 surface consisting of As dimers finally appears due to destabilization of Ga-As dimers at high temperature and high pressure

  20. Chalcogen passivation of GaAs(1 0 0) surfaces: theoretical study

    International Nuclear Information System (INIS)

    Szucs, B.; Hajnal, Z.; Frauenheim, Th.; Gonzalez, C.; Ortega, J.; Perez, R.; Flores, F.

    2003-01-01

    In this work, structural and electronic properties of Se- and S-passivated GaAs(1 0 0) surface reconstructions are investigated by density functional theory (DFT) based methods. We have performed total energy minimization of several model geometries of the reconstructed surfaces at different stoichiometry. The common feature is the appearance of a chalcogen layer on top of the Ga terminated surface, forming a Ga-chalcogenid like monolayer. In the case of selenium (Se), monomeric first layer formation is predicted, while in extrem chemically circumstances the sulphur (S) passivated surface can also reconstruct forming S-dimers

  1. Surface passivation of GaAs nanowires by the atomic layer deposition of AlN

    Energy Technology Data Exchange (ETDEWEB)

    Shtrom, I. V., E-mail: igorstrohm@mail.ru; Bouravleuv, A. D. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Samsonenko, Yu. B.; Khrebtov, A. I. [Russian Academy of Sciences, St. Petersburg National Research Academic University—Nanotechnology Research and Education Center (Russian Federation); Soshnikov, I. P. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Reznik, R. R.; Cirlin, G. E., E-mail: cirlin@beam.ioffe.ru [Russian Academy of Sciences, St. Petersburg National Research Academic University—Nanotechnology Research and Education Center (Russian Federation); Dhaka, V.; Perros, A.; Lipsanen, H. [Aalto University (Finland)

    2016-12-15

    It is shown that the atomic layer deposition of thin AlN layers can be used to passivate the surface states of GaAs nanowires synthesized by molecular-beam epitaxy. Studies of the optical properties of samples by low-temperature photoluminescence measurements shows that the photoluminescence-signal intensity can be increased by a factor of up to five by passivating the nanowires with a 25-Å-thick AlN layer.

  2. Propagation of surface acoustic waves in n-type GaAs films

    Science.gov (United States)

    Wu, Chhi-Chong; Tsai, Jensan

    1983-05-01

    The effect of nonparabolicity on the amplification of surface acoustic waves in n-type GaAs films is investigated quantum mechanically in the GHz frequency region. Numerical results show that the amplification coefficient for the nonparabolic band structure is enhanced due to the nonlinear nature of the energy band in semiconductors. Moreover, the amplification coefficients in semiconductors depend on the temperature, the electronic screening effect, the frequency of sound waves, the applied electric field, and the thickness of the semiconductor film.

  3. Influence of GaAs Substrate Orientation on InAs Quantum Dots: Surface Morphology, Critical Thickness, and Optical Properties

    Directory of Open Access Journals (Sweden)

    Liang BL

    2007-01-01

    Full Text Available AbstractInAs/GaAs heterostructures have been simultaneously grown by molecular beam epitaxy on GaAs (100, GaAs (100 with a 2° misorientation angle towards [01−1], and GaAs (n11B (n = 9, 7, 5 substrates. While the substrate misorientation angle increased from 0° to 15.8°, a clear evolution from quantum dots to quantum well was evident by the surface morphology, the photoluminescence, and the time-resolved photoluminescence, respectively. This evolution revealed an increased critical thickness and a delayed formation of InAs quantum dots as the surface orientation departed from GaAs (100, which was explained by the thermal-equilibrium model due to the less efficient of strain relaxation on misoriented substrate surfaces.

  4. A new theoretical approach to adsorption desorption behavior of Ga on GaAs surfaces

    Science.gov (United States)

    Kangawa, Y.; Ito, T.; Taguchi, A.; Shiraishi, K.; Ohachi, T.

    2001-11-01

    We propose a new theoretical approach for studying adsorption-desorption behavior of atoms on semiconductor surfaces. The new theoretical approach based on the ab initio calculations incorporates the free energy of gas phase; therefore we can calculate how adsorption and desorption depends on growth temperature and beam equivalent pressure (BEP). The versatility of the new theoretical approach was confirmed by the calculation of Ga adsorption-desorption transition temperatures and transition BEPs on the GaAs(0 0 1)-(4×2)β2 Ga-rich surface. This new approach is feasible to predict how adsorption and desorption depend on the growth conditions.

  5. Early stages of Cs adsorption mechanism for GaAs nanowire surface

    Science.gov (United States)

    Diao, Yu; Liu, Lei; Xia, Sihao; Feng, Shu

    2018-03-01

    In this study, the adsorption mechanism of Cs adatoms on the (100) surface of GaAs nanowire with [0001] growth direction is investigated utilizing first principles method based on density function theory. The adsorption energy, work function, atomic structure and electronic property of clean surface and Cs-covered surfaces with different coverage are discussed. Results show that when only one Cs is adsorbed on the surface, the most favorable adsorption site is BGa-As. With increasing Cs coverage, work function gradually decreases and gets its minimum at 0.75 ML, then rises slightly when Cs coverage comes to 1 ML, indicating the existence of 'Cs-kill' phenomenon. According to further analysis, Cs activation process can effectively reduce the work function due to the formation of a downward band bending region and surface dipole moment directing from Cs adatom to the surface. As Cs coverage increases, the conduction band minimum and valence band maximum both shift towards lower energy side, contributed by the orbital hybridization between Cs-5s, Cs-5p states and Ga-4p, As-4s, As-4p states near Fermi level. The theoretical calculations and analysis in this study can improve the Cs activation technology for negative electron affinity optoelectronic devices based on GaAs nanowires, and also provide a reference for the further Cs/O or Cs/NF3 activation process.

  6. Optical and Surface Characteristics of Mg-Doped GaAs Nanocrystalline Thin Film Deposited by Thermionic Vacuum Arc Technique

    Science.gov (United States)

    Pat, Suat; Özen, Soner; Şenay, Volkan; Korkmaz, Şadan

    2017-01-01

    Magnesium (Mg) is the most promising p-type dopant for gallium arsenide (GaAs) semiconductor technology. Mg-doped GaAs nanocrystalline thin film has been deposited at room temperature by the thermionic vacuum arc technique, a rapid deposition method for production of doped GaAs material. The microstructure and surface and optical properties of the deposited sample were investigated by x-ray diffraction analysis, scanning electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, ultraviolet-visible spectrophotometry, and interferometry. The crystalline direction of the deposited sample was determined to be (220) plane and (331) plane at 44.53° and 72.30°, respectively. The Mg-doped GaAs nanocrystalline sample showed high transmittance.

  7. Structural and Electrical Characterization of Oxidated, Nitridated and Oxi-nitridated (100) GaAs Surfaces

    Science.gov (United States)

    Paul, Narayan Chandra; Nakamura, Kazuki; Takebe, Masahide; Takemoto, Akira; Inokuma, Takao; Iiyama, Koichi; Takamiya, Saburo; Higashimine, Koichi; Ohtsuka, Nobuo; Yonezawa, Yasuto

    2003-07-01

    Oxidation by the UV & ozone process, nitridation by the nitrogen helicon-wave-excited plasma process, and the combination of these processes are applied to (100) GaAs wafers. An atomic force microscope, X-ray photoelectron spectroscopy, a transmission electron microscope, photoluminescence and electrical characteristics (current-voltage and capacitance-voltage) were used to analyze the influences of these processes on the structure and composition of the surfaces and the interfaces. Metal-insulator-semiconductor (MIS) diodes and Schottky diodes were fabricated in order to investigate the electrical influences of these processes. The oxidation slightly disorders GaAs surfaces. Nitridation of a bare surface creates about a 2-nm-thick strongly disordered layer, which strongly deteriorates the electrical and photoluminescence characteristics. Nitridation of oxidated wafers (oxi-nitridation) forms firm amorphous GaON layers, which contain GaN, with very flat and sharp GaON/GaAs interfaces, where crystal disorder is hardly observed. It improves the current-voltage (I-V) and capacitance-voltage (C-V) characteristics and the photoluminescence intensity. Results of the structural and the electrical characterizations qualitatively coincide well with each other.

  8. Surface reconstruction of GaAs(001) nitrided under the controlled As partial pressure [rapid communication

    Science.gov (United States)

    Imayoshi, Takahiro; Oigawa, Haruhiro; Shigekawa, Hidemi; Tokumoto, Hiroshi

    2003-08-01

    Under the controlled As partial pressure, the nitridation process of GaAs(0 0 1)-(2 × 4) surface was studied using a scanning tunneling microscope (STM) combined with an electron cyclotron resonance plasma-assisted molecular beam epitaxy system. With either prolonging the nitridation time or decreasing the As partial pressure, the previously reported (3 × 3) structure with two dimers per surface cell ((3 × 3)-2D) was found to progressively convert into a new (3 × 3) structure characterized by one dimer per surface cell ((3 × 3)-1D). Reversely the exposure to arsenic transformed the structure from (3 × 3)-1D to (3 × 3)-2D, suggesting that the topmost layer is composed of As 2-dimers. Based on these STM images together with the X-ray photoelectron spectroscopy data, we propose the new As 2-dimer coverage models to explain both (3 × 3)-1D and -2D structures involving the exchange reaction of arsenic with nitrogen in the subsurface region of GaAs.

  9. Self-assembly of Silver Nanoparticles and Multiwall Carbon Nanotubes on Decomposed GaAs Surfaces

    Directory of Open Access Journals (Sweden)

    Unnikrishnan NV

    2010-01-01

    Full Text Available Abstract Atomic Force Microscopy complemented by Photoluminescence and Reflection High Energy Electron Diffraction has been used to study self-assembly of silver nanoparticles and multiwall carbon nanotubes on thermally decomposed GaAs (100 surfaces. It has been shown that the decomposition leads to the formation of arsenic plate-like structures. Multiwall carbon nanotubes spin coated on the decomposed surfaces were mostly found to occupy the depressions between the plates and formed boundaries. While direct casting of silver nanoparticles is found to induce microdroplets. Annealing at 300°C was observed to contract the microdroplets into combined structures consisting of silver spots surrounded by silver rings. Moreover, casting of colloidal suspension consists of multiwall carbon nanotubes and silver nanoparticles is observed to cause the formation of 2D compact islands. Depending on the multiwall carbon nanotubes diameter, GaAs/multiwall carbon nanotubes/silver system exhibited photoluminescence with varying strength. Such assembly provides a possible bottom up facile way of roughness controlled fabrication of plasmonic systems on GaAs surfaces.

  10. Effect of diameter and surface roughness on ultrasonic properties of GaAs nanowires

    Science.gov (United States)

    Dhawan, Punit Kumar; Wan, Meher; Verma, S. K.; Pandey, D. K.; Yadav, R. R.

    2015-02-01

    Second and third order elastic constants of GaAs Nanowires (NWs) are calculated using the many-body interaction potential model. The velocities of ultrasonic waves at different orientations of propagation with unique axis are evaluated using the second order elastic constants. The ultrasonic attenuation and thermal relaxation times of the single crystalline GaAs-NW are determined as a function of diameter and surface roughness by means of Mason theoretical approach using the thermal conductivity and higher order elastic constants. The diameter variation of ultrasonic attenuation and thermal relaxation exhibit second order polynomial function of diameter. It is also found that ultrasonic attenuation and thermal relaxation follow the exponential decay with the surface roughness for GaAs-NW due to reduction in thermal conductivity caused by dominance of surface asperities. Finally, the correlations among ultrasonic parameters, thermal conductivity, surface roughness, and diameter for GaAs-NWs are established leading towards potential applications.

  11. Surface study of organopalladium molecules on S-terminated GaAs

    International Nuclear Information System (INIS)

    Konishi, Tomoya; Toujyou, Takashi; Ishikawa, Takuma; Teraoka, Teruki; Ueta, Yukiko; Kihara, Yoshifumi; Moritoki, Hideji; Tono, Tatsuo; Musashi, Mio; Tada, Takashi; Tsukamoto, Shiro; Nishiwaki, Nagatoshi; Fujikawa, Seiji; Takahasi, Masamitu; Bell, Gavin; Shimoda, Masahiko

    2011-01-01

    Organopalladium species ({Pd}) immobilized on an S-terminated GaAs substrate (S/GaAs) effectively catalyzes C-C bond formation in the Mizoroki-Heck reaction with cycle durability. However, the immobilizing mechanism of {Pd} is unknown. In this study, we deposited Pd(OCOCH 3 ) 2 on S/GaAs in two different methods, namely dry-physical vapor-deposition and wetchemical deposition, and compared the catalytic activities in the Mizoroki-Heck reaction. Also, S-termination and {Pd}-immobilization on GaAs grains were performed by the wet-chemical method to monitor the change in the surface chemical structure during the preparation process with diffuse reflectance Fourier transform infrared spectroscopy (FT-IR). FT-IR measurements implied that the immobilization of catalytic active {Pd} was related to the OH groups on the S-terminated surface. {Pd}-S/GaAs prepared dryphysically showed poor catalytic activity, because {Pd} was not immobilized under absence of OH groups. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Direct investigation of (sub-) surface preparation artifacts in GaAs based materials by FIB sectioning

    Energy Technology Data Exchange (ETDEWEB)

    Belz, Jürgen; Beyer, Andreas; Torunski, Torsten; Stolz, Wolfgang; Volz, Kerstin

    2016-04-15

    The introduction of preparation artifacts is almost inevitable when producing samples for (scanning) transmission electron microscopy ((S)TEM). These artifacts can be divided in extrinsic artifacts like damage processes and intrinsic artifacts caused by the deviations from the volume strain state in thin elastically strained material systems. The reduction and estimation of those effects is of great importance for the quantitative analysis of (S)TEM images. Thus, optimized ion beam preparation conditions are investigated for high quality samples. Therefore, the surface topology is investigated directly with atomic force microscopy (AFM) on the actual TEM samples. Additionally, the sectioning of those samples by a focused ion beam (FIB) is used to investigate the damage depth profile directly in the TEM. The AFM measurements show good quantitative agreement of sample height modulation due to strain relaxation to finite elements simulations. Strong indications of (sub-) surface damage by ion beams are observed. Their influence on high angle annular dark field (HAADF) imaging is estimated with focus on thickness determination by absolute intensity methods. Data consolidation of AFM and TEM measurements reveals a 3.5 nm surface amorphization, negligible surface roughness on the scale of angstroms and a sub-surface damage profile in the range of up to 8.0 nm in crystalline gallium arsenide (GaAs) and GaAs-based ternary alloys. A correction scheme for thickness evaluation of absolute HAADF intensities is proposed and applied for GaAs based materials. - Highlights: • The damage by Ar-ion milling during TEM sample preparation is investigated directly. • After FIB sectioning damage and deep disorder of c-GaAs is seen in cross-section. • The influence of such disorder on conventional ADF measurements is estimated. • A correction for HAADF measurements is proposed with focus on thickness estimations.

  13. Synchrotron photoemission spectroscopy study of ammonium hydroxide etching to prepare well-ordered GaAs(1 0 0) surfaces

    International Nuclear Information System (INIS)

    Lebedev, Mikhail V.; Ensling, David; Hunger, Ralf; Mayer, Thomas; Jaegermann, Wolfram

    2004-01-01

    Synchrotron-induced photoelectron spectroscopy was used to investigate the native-oxide-covered GaAs(1 0 0) surface and changes induced by etching with aqueous ammonia solution and by annealing in vacuum. The etching step removes arsenic and gallium oxides from the surface and the surface gets covered by elemental arsenic and tiny amounts of gallium suboxide. The surface oxygen content is reduced by an order of magnitude after etching, whereas the surface carbon content is somewhat increased. Annealing of this surface at 450 deg. C results in the disappearance of elemental arsenic and a considerable decrease in surface carbon and oxygen contents. The valence band spectra exhibit clear features typical for As-terminated GaAs(1 0 0) surfaces, as also obtained after As decapping

  14. Transient surface states during the CBE growth of GaAs

    Science.gov (United States)

    Farrell, T.; Hill, D.; Joyce, T. B.; Bullough, T. J.; Weightman, P.

    1997-05-01

    We report the occurrence of a transient surface state during the initial stages of CBE GaAs(0 0 1) growth. The state was detected in real-time reflectance ( R) and reflectance anisotropy spectroscopy (RAS) growth monitoring. At low growth rates, less than 1 μm/h, beam equivalent pressure (BEP) of triethylgallium (TEG) BEPs there was a rapid increase in R at all monitoring wavelengths, followed by a monotonic decay to its pre-growth value. This transient increase in R was accompanied by a change in the RAS signal, the magnitude and sign of which varied with wavelength. The initial increase in R is shown to be associated with the development of a metallic-like surface whereas the changes in the RAS signal are consistent with the formation of Ga dimers.

  15. Surface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation

    International Nuclear Information System (INIS)

    Shiozaki, Nanako; Anantathanasarn, Sanguan; Sato, Taketomo; Hashizume, Tamotsu; Hasegawa, Hideki

    2005-01-01

    Etched GaAs quantum wires (QWRs) and selectively grown (SG) QWRs were fabricated, and dependence of their photoluminescence (PL) properties on QWR width (W) and QWR distance to surface (d) were investigated. PL intensity greatly reduced with reduction of W and d, due to non-radiative recombination through surface states. Surface passivation by growing a Si interface control layer (Si-ICL) on group III-terminated surfaces greatly improved PL properties

  16. X-ray in-situ study of copper electrodeposition on UHV prepared GaAs(001) surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Gruender, Yvonne

    2008-06-02

    For this work a unique setup for in-situ electrochemical studies was employed and improved. This setup permits UHV preparation of the GaAs(001) surface with a defined surface termination (arsenic-rich or gallium-rich) and its characterization by SXRD in UHV, under ambient pressure in inert gas and in electrolyte under potential control without passing through air. The GaAs(001) surfaces were capped by amorphous arsenic. This permitted to ship them through ambient air. Afterwards smooth well defined GaAs(001) surfaces could be recovered by thermal annealing in UHV. A first investigation of the arsenic capped sample was done by atomic force microscopy (AFM) and Surface X-Ray Diffraction (SXRD). The non bulk like termination of the arsenic buried GaAs(001) surface was revealed. For the electrochemical metal deposition, arsenic terminated (2 x 4) reconstructed and gallium terminated (4 x 2) reconstructed GaAs(001) surfaces were employed. These surfaces were characterized by STM, LEED and a first time by SXRD. The surfaces are smooth, however, a higher degree of disorder than for MBE prepared reconstructed GaAs(001) is found. After exposure of the sample to nitrogen, the surfaces were then again studied by SXRD. These two steps characterizing the bare GaAs(001) surfaces permitted us to get a better knowledge of the starting surface and its influence on the later electrodeposited copper. At ambient pressure both reconstructions are lifted, but the surface is not bulk-like terminated as can be deduced from the crystal truncation rods. Epitaxial copper clusters grow upon electrodeposition on the UHV prepared GaAs(001) surface. The copper lattice is rotated and inclined with respect to the GaAs substrate lattice, leading to eight symmetry equivalent domains. The influence of the surface termination as well as the nucleation potential on the structure of the electrodeposited copper were investigated. The tilt and rotation angles do not depend on the deposition potential but

  17. Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium

    Energy Technology Data Exchange (ETDEWEB)

    Seredin, P. V., E-mail: paul@phys.vsu.ru; Fedyukin, A. V. [Voronezh State University (Russian Federation); Arsentyev, I. N.; Vavilova, L. S.; Tarasov, I. S. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Prutskij, T. [Benemérita Universidad Autonoma de Puebla, Instituto de Ciencias (Mexico); Leiste, H.; Rinke, M. [Karlsruhe Nano Micro Facility (Germany)

    2016-07-15

    The aim of this study is to explore the structural and optical properties of single-crystal GaAs(100) doped with Cr atoms by burning them into the substrate at high temperatures. The diffusion of chromium into single-crystal GaAs(100) substrates brings about the formation of a thin (~20–40 μm) GaAs:Cr transition layer. In this case, chromium atoms are incorporated into the gallium-arsenide crystal lattice and occupy the regular atomic sites of the metal sublattice. As the chromium diffusion time is increased, such behavior of the dopant impurity yields changes in the energy structure of GaAs, a decrease in the absorption at free charge carriers, and a lowering of the surface recombination rate. As a result, the photoluminescence signal from the sample is significantly enhanced.

  18. In-situ NAP XPS studies of dissociative water adsorption on GaAs(100) surfaces

    Science.gov (United States)

    Ptasinska, Sylwia; Zhang, Xueqiang

    2014-03-01

    In current semiconductor-based technology it is important to design and fabricate new materials in order to achieve specific well-defined properties and functionalities. Before such systems can be applied they first need to be understood, refined and controlled. Therefore, a basic knowledge about molecule/semiconductor surface interfaces is essential. In the present work dissociative water adsorption on the GaAs(100) surface is monitored using X-ray Photoelectron Spectroscopy (XPS) performed in situ under near ambient conditions. Firstly, the crystal surface is exposed to water vapor pressures ranging from UHV to 0.5 kPa. At elevated pressures an increase of oxygenation and hydroxylation of Ga surface atoms has been observed in the Ga2p XPS spectra. Moreover, intense signals obtained from molecularly adsorbed water molecules or water molecules adsorbed via hydrogen bond to surface OH groups have been also observed in the O1s spectra. Finally, the crystal surface is annealed up to 700 K at water vapor pressure of 0.01 kPa, which leads to desorption of physisorbed water molecules and further increase of surface oxidation. The research described herein was supported by the Division of Chemical Sciences, Geosciences and Biosciences, Basic Energy Sciences, Office of Science, United States Department of Energy through grant number DE-FC02-04ER15533.

  19. Nano-pits on GaAs (1 0 0) surface: Preferential sputtering and diffusion

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Tanuj, E-mail: tanujkumar@cuh.ac.in [Department of Physics, Central University of Haryana, Jant-Pali, Mahendergarh 123029 (India); Panchal, Vandana [Department of Physics, National Institute of Technology, Kurukshetra 136119 (India); Kumar, Ashish; Kanjilal, D. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)

    2016-07-15

    Self organized nano-structure array on the surfaces of semiconductors have potential applications in photonics, magnetic devices, photovoltaics, and surface-wetting tailoring etc. Therefore, the control over their dimensions is gaining scientific interest in last couple of decades. In this work, fabrication of pits of nano-dimensions is carried out on the GaAs (1 0 0) surface using 50 keV Ar{sup +} at normal incidence. Variation in fluence from 3 × 10{sup 17} ions/cm{sup 2} to 5 × 10{sup 18} ions/cm{sup 2} does not make a remarkable variation in the dimension of pits such as size and depth, which is confirmed by atomic force microscopy (AFM) and scanning electron microscopy (SEM). However the simultaneous dots formation is observed along with the pits at higher fluences. Average size of pits is found to be of 22 nm with depth of 1–5 nm for the used fluences. The importance of preferential sputtering of ‘As’ as compared to ‘Ga’ is estimated using energy dispersive X-ray analysis (EDX). The observed alteration in near surface composition shows the Ga enrichment of surface, which is not being much affected by variation in fluence. The growth evolution of pits and dots for the used experimental conditions is explained on the basis of ion beam induced preferential sputtering and surface diffusion.

  20. Surface optical phonons in GaAs nanowires grown by Ga-assisted chemical beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    García Núñez, C., E-mail: carlos.garcia@uam.es; Braña, A. F.; Pau, J. L.; Ghita, D.; García, B. J. [Grupo de Electrónica y Semiconductores, Departamento de Física Aplicada, Universidad Autónoma de Madrid, 28049 Madrid (Spain); Shen, G.; Wilbert, D. S.; Kim, S. M.; Kung, P. [Department of Electrical and Computer Engineering, The University of Alabama, Tuscaloosa, Alabama 35487 (United States)

    2014-01-21

    Surface optical (SO) phonons were studied by Raman spectroscopy in GaAs nanowires (NWs) grown by Ga-assisted chemical beam epitaxy on oxidized Si(111) substrates. NW diameters and lengths ranging between 40 and 65 nm and between 0.3 and 1.3 μm, respectively, were observed under different growth conditions. The analysis of the Raman peak shape associated to either longitudinal or surface optical modes gave important information about the crystal quality of grown NWs. Phonon confinement model was used to calculate the density of defects as a function of the NW diameter resulting in values between 0.02 and 0.03 defects/nm, indicating the high uniformity obtained on NWs cross section size during growth. SO mode shows frequency downshifting as NW diameter decreases, this shift being sensitive to NW sidewall oxidation. The wavevector necessary to activate SO phonon was used to estimate the NW facet roughness responsible for SO shift.

  1. A new high-efficiency GaAs solar cell structure using a heterostructure back-surface field

    Science.gov (United States)

    Gale, R. P.; Fan, J. C. C.; Turner, G. W.; Chapman, R. L.

    1984-01-01

    Shallow-homojunction GaAs solar cells are fabricated with a back-surface field (BSF) produced by a GaAs/Al(0.2)Ga(0.8)As heterostructure. These cells exhibit higher open-circuit voltages and conversion efficiencies than control cells made with a p-GaAs/p(+)-GaAs BSF. Conversion efficiencies of over 22 percent (AM1, total area) have been obtained with this new structure. The use of a higher bandgap material below the active region not only provides an enhanced BSF but will also permit the implementation of two solar-cell designs: a GaAs cell with a back-surface reflector and an AlGaAs cell that can be used as the upper cell in tandem configurations.

  2. Bistable Si dopants in the GaAs (1 1 0) surface

    International Nuclear Information System (INIS)

    Smakman, E P; Koenraad, P M

    2015-01-01

    In this review, recent work is discussed on bistable Si dopants in the GaAs (1 1 0) surface, studied by scanning tunneling microscopy (STM). The bistability arises because the dopant atom can switch between a positive and a negative charge state, which are associated with two different lattice configurations. Manipulation of the Si atom charge configuration is achieved by tuning the local band bending with the STM tip. Furthermore, illuminating the sample with a laser also influences the charge state, allowing the operation of the dopant atom as an optical switch. The switching dynamics without illumination is investigated in detail as a function of temperature, lateral tip position, and applied tunneling conditions. A physical model is presented that independently describes the thermal and quantum tunneling contributions to the switching frequency and charge state occupation of a single Si atom. The basic functionality of a memory cell is demonstrated employing a single bistable Si dopant as the active element, using the STM tip as a gate to write and read the information. (topical review)

  3. Characterization study of native oxides on GaAs(100) surface by XPS

    Science.gov (United States)

    Feng, Liu; Zhang, Lian-dong; Liu, Hui; Gao, Xiang; Miao, Zhuang; Cheng, Hong-chang; Wang, Long; Niu, Sen

    2013-08-01

    In order to know more about the surface state of GaAs(100) epitaxial wafer during a storage period of two years, the XPS analysis was carried out four times on the surface, respectively polished by chemical etching, stored in desiccator for half a year, one year and two years. The results indicated that even after cleaned by proper etchant solutions, the fresh surface was slightly oxidized with Ga2O3, As2O3 and organic contaminant. The epi-wafer was always exposed to air during the storage period, so more and more oxides turned out. The mixed oxide layer comprised of C-OR, COOR, Ga2O3, As2O3 and As2O5 appeared after only half a year. In the ageing process of two years, the oxide types of gallium or arsenic did not change with stable content of Ga2O3 and remarkably fluctuating relative contents of As2O3 and As2O5. Based on the intensity ratio of Ga 3d-Ga2O3 to Ga 3d-GaAs, the thickness of oxide layer was estimated. The oxide layer generated after chemical polishing was very thin, just only 0.435nm thick, and then it grew rapidly, approximately 1.822nm after one year while almost no change any more subsequently. It was indicated that after the epi-wafer was stored for one year, because of volatile As2O3 or As2O5, there remained a large amount of Ga2O3 in oxide layer, which prevented the reactions between bulk material and oxide layer with oxygen. So native oxide layer plays a role as passive film to protect epi-wafer against the environment during a long storage period.

  4. Ultra-thin flexible GaAs photovoltaics in vertical forms printed on metal surfaces without interlayer adhesives

    Science.gov (United States)

    Kim, Juho; Hwang, Jeongwoo; Song, Kwangsun; Kim, Namyun; Shin, Jae Cheol; Lee, Jongho

    2016-06-01

    Wearable flexible electronics often require sustainable power sources that are also mechanically flexible to survive the extreme bending that accompanies their general use. In general, thinner microelectronic devices are under less strain when bent. This paper describes strategies to realize ultra-thin GaAs photovoltaics through the interlayer adhesiveless transfer-printing of vertical-type devices onto metal surfaces. The vertical-type GaAs photovoltaic devices recycle reflected photons by means of bottom electrodes. Systematic studies with four different types of solar microcells indicate that the vertical-type solar microcells, at only a quarter of the thickness of similarly designed lateral-type cells, generate a level of electric power similar to that of thicker cells. The experimental results along with the theoretical analysis conducted here show that the ultra-thin vertical-type solar microcells are durable under extreme bending and thus suitable for use in the manufacturing of wearable flexible electronics.

  5. Ultra-thin flexible GaAs photovoltaics in vertical forms printed on metal surfaces without interlayer adhesives

    International Nuclear Information System (INIS)

    Kim, Juho; Song, Kwangsun; Kim, Namyun; Lee, Jongho; Hwang, Jeongwoo; Shin, Jae Cheol

    2016-01-01

    Wearable flexible electronics often require sustainable power sources that are also mechanically flexible to survive the extreme bending that accompanies their general use. In general, thinner microelectronic devices are under less strain when bent. This paper describes strategies to realize ultra-thin GaAs photovoltaics through the interlayer adhesiveless transfer-printing of vertical-type devices onto metal surfaces. The vertical-type GaAs photovoltaic devices recycle reflected photons by means of bottom electrodes. Systematic studies with four different types of solar microcells indicate that the vertical-type solar microcells, at only a quarter of the thickness of similarly designed lateral-type cells, generate a level of electric power similar to that of thicker cells. The experimental results along with the theoretical analysis conducted here show that the ultra-thin vertical-type solar microcells are durable under extreme bending and thus suitable for use in the manufacturing of wearable flexible electronics.

  6. Attractive interaction between Mn atoms on the GaAs(110) surface observed by scanning tunneling microscopy.

    Science.gov (United States)

    Taninaka, Atsushi; Yoshida, Shoji; Kanazawa, Ken; Hayaki, Eiko; Takeuchi, Osamu; Shigekawa, Hidemi

    2016-06-16

    Scanning tunneling microscopy/spectroscopy (STM/STS) was carried out to investigate the structures of Mn atoms deposited on a GaAs(110) surface at room temperature to directly observe the characteristics of interactions between Mn atoms in GaAs. Mn atoms were paired with a probability higher than the random distribution, indicating an attractive interaction between them. In fact, re-pairing of unpaired Mn atoms was observed during STS measurement. The pair initially had a new structure, which was transformed during STS measurement into one of those formed by atom manipulation at 4 K. Mn atoms in pairs and trimers were aligned in the direction, which is theoretically predicted to produce a high Curie temperature.

  7. Epitaxial ferromagnetic Fe3Si on GaAs(111)A with atomically smooth surface and interface

    International Nuclear Information System (INIS)

    Liu, Y. C.; Hung, H. Y.; Kwo, J.; Chen, Y. W.; Lin, Y. H.; Cheng, C. K.; Hong, M.; Tseng, S. C.; Hsu, C. H.; Chang, M. T.; Lo, S. C.

    2015-01-01

    Single crystal ferromagnetic Fe 3 Si(111) films were grown epitaxially on GaAs(111)A by molecular beam epitaxy. These hetero-structures possess extremely low surface roughness of 1.3 Å and interfacial roughness of 1.9 Å, measured by in-situ scanning tunneling microscope and X-ray reflectivity analyses, respectively, showing superior film quality, comparing to those attained on GaAs(001) in previous publications. The atomically smooth interface was revealed by the atomic-resolution Z (atomic number)-contrast scanning transmission electron microscopy (STEM) images using the correction of spherical aberration (Cs)-corrected electron probe. Excellent crystallinity and perfect lattice match were both confirmed by high resolution x-ray diffraction. Measurements of magnetic property for the Fe 3 Si/GaAs(111) yielded a saturation moment of 990 emu/cm 3 with a small coercive field ≤1 Oe at room temperature

  8. Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Rahul, E-mail: rkp203@gmail.com [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Mukhopadhyay, P. [Rajendra Mishra School of Engineering Entrepreneurship, Indian Institute of Technology, Kharagpur 721302 (India); Bag, A.; Jana, S. Kr. [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Chakraborty, A. [Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721 302 (India); Das, S.; Mahata, M. Kr. [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Biswas, D. [Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721 302 (India)

    2015-01-01

    Highlights: • In(Al,Ga)As metamorphic buffers on GaAs have been grown. • Surface morphology, strain relaxation and compositional variation have been studied. • Al containing buffers shows inferior surface roughness. • Surface roughness modulates the indium incorporation rate. - Abstract: In this work, compositionally graded In(Al,Ga)As metamorphic buffers (MBs) on GaAs substrate have been grown by MBE through three different paths. A comparative study has been done to comprehend the effect of underlying MB on the constant composition InAlAs healing layer by analyzing the relaxation behaviour, composition and surface morphology of the grown structures. The compositional variation between the constant composition healing layers on top of graded MB has been observed in all three samples although the growth conditions have been kept same. Indium incorporation rate has been found to be dependent on underlying MB. By combining the result of atomic force microscopy, photo-luminescence and X-ray reciprocal space mapping, varying surface roughness has been proposed as the probable driving force behind different Indium incorporation rate.

  9. Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness

    International Nuclear Information System (INIS)

    Kumar, Rahul; Mukhopadhyay, P.; Bag, A.; Jana, S. Kr.; Chakraborty, A.; Das, S.; Mahata, M. Kr.; Biswas, D.

    2015-01-01

    Highlights: • In(Al,Ga)As metamorphic buffers on GaAs have been grown. • Surface morphology, strain relaxation and compositional variation have been studied. • Al containing buffers shows inferior surface roughness. • Surface roughness modulates the indium incorporation rate. - Abstract: In this work, compositionally graded In(Al,Ga)As metamorphic buffers (MBs) on GaAs substrate have been grown by MBE through three different paths. A comparative study has been done to comprehend the effect of underlying MB on the constant composition InAlAs healing layer by analyzing the relaxation behaviour, composition and surface morphology of the grown structures. The compositional variation between the constant composition healing layers on top of graded MB has been observed in all three samples although the growth conditions have been kept same. Indium incorporation rate has been found to be dependent on underlying MB. By combining the result of atomic force microscopy, photo-luminescence and X-ray reciprocal space mapping, varying surface roughness has been proposed as the probable driving force behind different Indium incorporation rate

  10. Etching of GaAs substrates to create As-rich surface

    Indian Academy of Sciences (India)

    WINTEC

    ionized water. Another sample was prepared by treating. GaAs wafer in HCl solution for 10 min. The last sample was treated with HCl solution (1 : 1) for 10 min, then in deionized water for 10 s. After treating with different solutions, these substrates were dried in a stream of dry nitrogen. XPS analysis was carried out in a VG ...

  11. Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing

    Directory of Open Access Journals (Sweden)

    A.V. Fomin

    2017-04-01

    Full Text Available Studied experimentally in this work has been the process of smoothing relief roughness on the GaAs wafer surface by using the method of contactless nonabrasive chemical-and-mechanical polishing under conditions of its rotational movement relatively to the polishing plate. The model of this process has been developed under assumption that the pure diffusion smoothing mechanism takes place there. It has been shown that satisfactory correspondence between respective calculated dependences and experimental results can be reached by introducing the “effective” diffusion coefficient providing account of etchant convection.

  12. Preparation of GaAs photocathodes at low temperature

    International Nuclear Information System (INIS)

    Mulhollan, G.; Clendenin, J.; Tang, H.

    1996-10-01

    The preparation of an atomically clean surface is a necessary step in the formation of negative electron affinity (NEA) GaAs. Traditional methods to this end include cleaving, heat cleaning and epitaxial growth. Cleaving has the advantage of yielding a fresh surface after each cleave, but is limited to small areas and is not suitable for specialized structures. Heat cleaning is both simple and highly successful, so it is used as a preparation method in virtually all laboratories employing a NEA source on a regular basis. Due to its high cost and complexity, epitaxial growth of GaAs with subsequent in vacuo transfer is not a practical solution for most end users of GaAs as a NEA electron source. While simple, the heating cleaning process has a number of disadvantages. Here, a variety of cleaning techniques related to preparation of an atomically clean GaAs surface without heating to 600 C are discussed and evaluated

  13. Correlation between structural, optical, and electrical properties of self-assembled plasmonic nanostructures on the GaAs surface

    Energy Technology Data Exchange (ETDEWEB)

    Gladskikh, Polina V.; Gladskikh, Igor A.; Toropov, Nikita A., E-mail: nikita.a.toropov@gmail.com; Baranov, Mikhail A.; Vartanyan, Tigran A. [ITMO University (Russian Federation)

    2015-11-15

    Self-assembled silver nanostructures on the industry-grade monocrystalline GaAs (100) wafer surface were obtained via physical vapor deposition and characterized by optical reflection spectroscopy, scanning electron microscopy, and current–voltage curve measurements. Reflection spectra of the samples with Ag equivalent thicknesses of 5, 7.5, and 10 nm demonstrated wide plasmonic bands in the visible range of spectra. Thermal annealing of the nanostructures led to narrowing of the plasmonic bands caused by major transformations of the film morphology. While the As prepared films predominantly had a small-scale labyrinth structure, after annealing well-separated silver nanoislands are formed on the gallium arsenide surface. A clear correlation between films morphology and their optical and electrical properties is elucidated. Annealing of the GaAs substrate with Ag nanostructures at 100 °C under control of the resistivity allowed us to obtain and fix the structure at the percolation threshold. It is established that the samples at the percolation threshold possess the properties of resistance switching and hysteresis.Graphical Abstract.

  14. Nanoripple formation on GaAs (001) surface by reverse epitaxy during ion beam sputtering at elevated temperature

    Energy Technology Data Exchange (ETDEWEB)

    Chowdhury, Debasree; Ghose, Debabrata, E-mail: debabrata1.ghose@gmail.com

    2016-11-01

    Highlights: • GaAs (001) surfaces are sputtered by 1 keV Ar{sup +} at sample temperature of 450 °C. • Highly ordered defect-free ripples develop at near-normal incidence angles (θ ≈ 0–25{sup 0}). • Concurrent sample rotation does not alter the ripple orientation with respect to the ion beam. • At grazing incidence angles anisotropic structure is formed. • Concurrent sample rotation shows that the structure orientation depends on the beam direction. - Abstract: Self-organized pattern formation by the process of reverse epitaxial growth has been investigated on GaAs (001) surfaces during 1 keV Ar{sup +} bombardment at target temperature of 450 °C for a wide range of incident angles. Highly ordered ripple formation driven by diffusion instability is evidenced at near normal incidence angles. Concurrent sample rotation shows that the ripple morphology and its orientation do not depend on the incident beam direction; rather they are determined by the symmetry of the crystal face.

  15. Vibration of Piezoelectric Nanowires Including Surface Effects

    Directory of Open Access Journals (Sweden)

    R. Ansari

    2014-04-01

    Full Text Available In this paper, surface and piezoelectric effects on the vibration behavior of nanowires (NWs are investigated by using a Timoshenko beam model. The electric field equations and the governing equations of motion for the piezoelectric NWs are derived with the consideration of surface effects. By the exact solution of the governing equations, an expression for the natural frequencies of NWs with simply-supported boundary conditions is obtained. The effects of piezoelectricity and surface effects on the vibrational behavior of Timoshenko NWs are graphically illustrated. A comparison is also made between the predictions of Timoshenko beam model and those of its Euler-Bernoulli counterpart. Additionally, the present results are validated through comparison with the available data in the literature.

  16. The development of integrated chemical microsensors in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    CASALNUOVO,STEPHEN A.; ASON,GREGORY CHARLES; HELLER,EDWIN J.; HIETALA,VINCENT M.; BACA,ALBERT G.; HIETALA,S.L.

    1999-11-01

    Monolithic, integrated acoustic wave chemical microsensors are being developed on gallium arsenide (GaAs) substrates. With this approach, arrays of microsensors and the high frequency electronic components needed to operate them reside on a single substrate, increasing the range of detectable analytes, reducing overall system size, minimizing systematic errors, and simplifying assembly and packaging. GaAs is employed because it is both piezoelectric, a property required to produce the acoustic wave devices, and a semiconductor with a mature microelectronics fabrication technology. Many aspects of integrated GaAs chemical sensors have been investigated, including: surface acoustic wave (SAW) sensors; monolithic SAW delay line oscillators; GaAs application specific integrated circuits (ASIC) for sensor operation; a hybrid sensor array utilizing these ASICS; and the fully monolithic, integrated SAW array. Details of the design, fabrication, and performance of these devices are discussed. In addition, the ability to produce heteroepitaxial layers of GaAs and aluminum gallium arsenide (AlGaAs) makes possible micromachined membrane sensors with improved sensitivity compared to conventional SAW sensors. Micromachining techniques for fabricating flexural plate wave (FPW) and thickness shear mode (TSM) microsensors on thin GaAs membranes are presented and GaAs FPW delay line and TSM resonator performance is described.

  17. Structural Evolution During Formation and Filling of Self-patterned Nanoholes on GaAs (100 Surfaces

    Directory of Open Access Journals (Sweden)

    Zhou Lin

    2008-01-01

    Full Text Available Abstract Nanohole formation on an AlAs/GaAs superlattice gives insight to both the “drilling” effect of Ga droplets on AlAs as compared to GaAs and the hole-filling process. The shape and depth of the nanoholes formed on GaAs (100 substrates has been studied by the cross-section transmission electron microscopy. The Ga droplets “drill” through the AlAs layer at a much slower rate than through GaAs due to differences in activation energy. Refill of the nanohole results in elongated GaAs mounds along the [01−1] direction. As a result of capillarity-induced diffusion, GaAs favors growth inside the nanoholes, which provides the possibility to fabricate GaAs and AlAs nanostructures.

  18. Comparison of the reactivity of alkyl and alkyl amine precursors with native oxide GaAs(100) and InAs(100) surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Henegar, A.J., E-mail: henegar1@umbc.edu; Gougousi, T., E-mail: gougousi@umbc.edu

    2016-12-30

    Graphical abstract: The interaction of the native oxides of GaAs(100) and InAs(100) with alkyl (trimethyl aluminum) and alkyl amine (tetrakis dimethylamino titanium) precursors during thermal atomic layer deposition (ALD) of Al{sub 2}O{sub 3} and TiO{sub 2} is compared. Al{sub 2}O{sub 3} if found to be a significantly better barrier against the transport of the surface native oxide during the film deposition as well as after post-deposition heat treatment. This superior blocking ability also limits the removal of the native oxides during the Al{sub 2}O{sub 3} ALD process. - Highlights: • Native oxide diffusion is required for continuous native oxide removal. • The diffusion barrier capabilities of Al{sub 2}O{sub 3} limits native oxide removal during ALD. • Arsenic oxide exhibits higher mobility from InAs compared to GaAs substrates. • Oxygen scavenging from the surface by trimethyl aluminum is confirmed. - Abstract: In this manuscript we compare the interaction of alkyl (trimethyl aluminum) and alkyl amine (tetrakis dimethylamino titanium) precursors during thermal atomic layer deposition with III-V native oxides. For that purpose we deposit Al{sub 2}O{sub 3} and TiO{sub 2}, using H{sub 2}O as the oxidizer, on GaAs(100) and InAs(100) native oxide surfaces. We find that there are distinct differences in the behavior of the two films. For the Al{sub 2}O{sub 3} ALD very little native oxide removal happens after the first few ALD cycles while the interaction of the alkyl amine precursor for TiO{sub 2} and the native oxides continues well after the surface has been covered with 2 nm of TiO{sub 2}. This difference is traced to the superior properties of Al{sub 2}O{sub 3} as a diffusion barrier. Differences are also found in the behavior of the arsenic oxides of the InAs and GaAs substrates. The arsenic oxides from the InAs surface are found to mix more efficiently in the growing dielectric film than those from the GaAs surface. This difference is attributed to

  19. Etching of GaAs substrates to create As-rich surface

    Indian Academy of Sciences (India)

    WINTEC

    All the procedures except HCl solution. (1 : 1) produce an As-rich surface. Also, none of the etchants except HF–ethanol solution produce Ga or As- rich (oxide free) surfaces. Optical microscopic study shows different etch pits produced due to etching in different solutions. Keywords. Etching; semi-insulating; XPS spectrum.

  20. Picosecond relaxation of X-ray excited GaAs

    Czech Academy of Sciences Publication Activity Database

    Tkachenko, V.; Medvedev, Nikita; Lipp, V.; Ziaja, B.

    2017-01-01

    Roč. 24, Sep (2017), s. 15-21 ISSN 1574-1818 Institutional support: RVO:68378271 Keywords : GaAS * X-ray excitation * picosecond relaxation Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: Fluids and plasma physics (including surface physics) Impact factor: 0.908, year: 2016

  1. Electronic Structure of Hydrogenated and Surface-Modified GaAs Nanocrystals: Ab Initio Calculations

    Directory of Open Access Journals (Sweden)

    Hamsa Naji Nasir

    2012-01-01

    Full Text Available Two methods are used to simulate electronic structure of gallium arsenide nanocrystals. The cluster full geometrical optimization procedure which is suitable for small nanocrystals and large unit cell that simulates specific parts of larger nanocrystals preferably core part as in the present work. Because of symmetry consideration, large unit cells can reach sizes that are beyond the capabilities of first method. The two methods use ab initio Hartree-Fock and density functional theory, respectively. The results show that both energy gap and lattice constant decrease in their value as the nanocrystals grow in size. The inclusion of surface part in the first method makes valence band width wider than in large unit cell method that simulates the core part only. This is attributed to the broken symmetry and surface passivating atoms that split surface degenerate states and adds new levels inside and around the valence band. Bond length and tetrahedral angle result from full geometrical optimization indicate good convergence to the ideal zincblende structure at the centre of hydrogenated nanocrystal. This convergence supports large unit cell methodology. Existence of oxygen atoms at nanocrystal surface melts down density of states and reduces energy gap.

  2. LEED structural analysis of GaAs(001)-c(4X4) surface

    Czech Academy of Sciences Publication Activity Database

    Romanyuk, Olexandr; Jiříček, Petr; Cukr, Miroslav; Bartoš, Igor

    566-568, - (2004), s. 89-93 ISSN 0039-6028 R&D Projects: GA AV ČR IAA1010108 Institutional research plan: CEZ:AV0Z1010914 Keywords : electron-solid interactions * low energy electron diffraction(LEED) * molecular beam epitaxy(MBE) * surface relaxation and reconstruction * gallium arsenide * low index single crystal scattering * diffraction Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.168, year: 2004

  3. Surface reconstruction processes in MO VPE grown GaAs layers

    Czech Academy of Sciences Publication Activity Database

    Nohavica, Dušan

    1999-01-01

    Roč. 50, 2/s (1999), s. 24-25 ISSN 1335-3632. [Development of Materials Science in Research and Education - DMS -RE 1998 /8./. Zlenice, 08.09.1998-10.09.1998] R&D Projects: GA AV ČR IAA2067901 Institutional research plan: CEZ:AV0Z2067918 Keywords : epitaxial growth * surface reconstruction Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

  4. Ceramic substrate including thin film multilayer surface conductor

    Energy Technology Data Exchange (ETDEWEB)

    Wolf, Joseph Ambrose; Peterson, Kenneth A.

    2017-05-09

    A ceramic substrate comprises a plurality of ceramic sheets, a plurality of inner conductive layers, a plurality of vias, and an upper conductive layer. The ceramic sheets are stacked one on top of another and include a top ceramic sheet. The inner conductive layers include electrically conductive material that forms electrically conductive features on an upper surface of each ceramic sheet excluding the top ceramic sheet. The vias are formed in each of the ceramic sheets with each via being filled with electrically conductive material. The upper conductive layer includes electrically conductive material that forms electrically conductive features on an upper surface of the top ceramic sheet. The upper conductive layer is constructed from a stack of four sublayers. A first sublayer is formed from titanium. A second sublayer is formed from copper. A third sublayer is formed from platinum. A fourth sublayer is formed from gold.

  5. Monitoring of tritium-contaminated surfaces, including skin

    International Nuclear Information System (INIS)

    Surette, R.A.; Wood, M.J.

    1994-05-01

    We have examined various commercially available tritium surface contamination monitors along with different swipe media and techniques for direct and indirect (swipe) monitoring of contaminated surfaces, including skin. None of the methods or instruments evaluated were more sensitive than the swipe and liquid scintillation counting (LSC) method. Swipe measurements with open-window proportional counters were, in general, less than half as sensitive as LSC, but have the advantages of having the results available almost immediately, and no sample preparation is required. The Nuclear Measurement Corporation's PC-55 is the most suitable instrument we tested for the analysis of routine swipe measurement. The PC-55 was about one third as sensitive as LSC when used with Ontario Hydro filter paper swipe media. Surface contamination measurement results can be obtained within minutes using the PC-55, compared to hours using LSC. The selection of swipe media for use with proportional counter-based instruments is critical. A medium that is electrically insulating can develop an electrostatic charge on its surface; this may alter the field gradient in the detector and may adversely influence the results. Although the PC-55 is sufficiently sensitive and very convenient, operational experience with the instrument is needed before recommending that it replace current LSC methods. The PC-55's susceptibility to internal tritium contamination may limit its practical usefulness. Because of the complexity of using live animals to evaluate direct and indirect methods for assessing skin contamination, pig skin was investigated as a possible substitute. We concluded that, for the first few hours post-exposure, pig skin mimics the kinetics of animal skin that has contacted a tritium-contaminated surface. (author). 30 refs., 1 tab., 7 figs

  6. Raman scattering of InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs surfaces.

    Science.gov (United States)

    Milekhin, Alexander; Yeryukov, Nikolay; Toropov, Alexander; Dmitriev, Dmitry; Sheremet, Evgeniya; Zahn, Dietrich Rt

    2012-08-23

    We present a comparative analysis of Raman scattering by acoustic and optical phonons in InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs surfaces. Doublets of folded longitudinal acoustic phonons up to the fifth order were observed in the Raman spectra of (001)- and (311)B-oriented quantum dot superlattices measured in polarized scattering geometries. The energy positions of the folded acoustic phonons are well described by the elastic continuum model. Besides the acoustic phonons, the spectra display features related to confined transverse and longitudinal optical as well as interface phonons in quantum dots and spacer layers. Their frequency positions are discussed in terms of phonon confinement, elastic stress, and atomic intermixing.

  7. Generation of X-rays by 850 MeV electrons in a novel periodic multicrystal structure on a GaAs plate surface

    International Nuclear Information System (INIS)

    Kaplin, V.V.; Uglov, S.R.; Zabaev, V.N.; Kanaev, V.G.; Litvin, S.V.; Timchenko, N.A.

    2000-01-01

    A novel type of a periodical crystalline target for the generation of coherent X-rays by relativistic electrons is described. The target has been done on the surface of a GaAs crystal plate by means of microlitography. The etched microstructure is a system of about 300 stripes 14 μm thick, 100 μm high and the gaps between the stripes are 29 μm. The measured spectra and orientational dependences of the X-rays emitted at an angle of 19 deg. to the 850 MeV electron beam of the Tomsk synchrotron are discussed. The generated 63 keV radiation consists of parametric X-ray radiation (PXR) and diffracted X-ray transition radiation (DTR). It has been shown that the intensity of the DTR component of the generated X-rays is much more great than that of the PXR

  8. Generation of X-rays by 850 MeV electrons in a novel periodic multicrystal structure on a GaAs plate surface

    CERN Document Server

    Kaplin, V V; Zabaev, V N; Kanaev, V G; Litvin, S V; Timchenko, N A

    2000-01-01

    A novel type of a periodical crystalline target for the generation of coherent X-rays by relativistic electrons is described. The target has been done on the surface of a GaAs crystal plate by means of microlitography. The etched microstructure is a system of about 300 stripes 14 mu m thick, 100 mu m high and the gaps between the stripes are 29 mu m. The measured spectra and orientational dependences of the X-rays emitted at an angle of 19 deg. to the 850 MeV electron beam of the Tomsk synchrotron are discussed. The generated 63 keV radiation consists of parametric X-ray radiation (PXR) and diffracted X-ray transition radiation (DTR). It has been shown that the intensity of the DTR component of the generated X-rays is much more great than that of the PXR.

  9. Chip yield for FETs fabricated on low-surface-defect GaAs wafers grown by a new MBE system

    Energy Technology Data Exchange (ETDEWEB)

    Kato, S.; Shigeta, J.; Miyata, T.; Kawata, M. (Central Research Laboratory, Hitachi Ltd., Tokyo (Japan)); Tamura, N. (Kasado Works, Hitachi Ltd., Yamachuci (Japan)); Takahashi, K. (Mechanical Research Laboratory, Hitachi Ltd., Ibaraki (Japan))

    1993-06-15

    A very low defect density is achieved with a new MBE system, in which the diameter of the top-heated Ga cell is as big as 60 mm and the distance between the wafer and the cell is optimized at 450 mm by simulation. This system grows GaAs wafers with a defect density of 14.6 cm[sup -2] for defects larger than 0.67 [mu]m[sup 2]. Our chip yield estimation for field effect transistors in the LSIs fabricated on the wafers shows that the grown wafer can integrate 100,000 FETs if each FET gate is 0.3 [mu]m long and 5 [mu]m wide and a chip yield of 42% is assumed

  10. Exploration Technology Development including Surface Acoustic Wave RFID chips

    Data.gov (United States)

    National Aeronautics and Space Administration — This project is focused on maturing future surface exploration technologies and instrumentation and working towards flight instrumentation and systems to support...

  11. Ab initio structural and vibrational properties of GaAs diamondoids and nanocrystals

    Directory of Open Access Journals (Sweden)

    Mudar Ahmed Abdulsattar

    2014-12-01

    Full Text Available Gallium arsenide diamondoids structural and vibrational properties are investigated using density functional theory at the PBE/6-31(d level and basis including polarization functions. Variation of energy gap as these diamondoids increase in size is seen to follow confinement theory for diamondoids having nearly equiaxed dimensions. Density of energy states transforms from nearly single levels to band structure as we reach larger diamondoids. Bonds of surface hydrogen with As atoms are relatively localized and shorter than that bonded to Ga atoms. Ga-As bonds have a distribution range of values due to surface reconstruction and effect of bonding to hydrogen atoms. Experimental bulk Ga-As bond length (2.45 Å is within this distribution range. Tetrahedral and dihedral angles approach values of bulk as we go to higher diamondoids. Optical-phonon energy of larger diamondoids stabilizes at 0.037 eV (297 cm-1 compared to experimental 0.035 eV (285.2 cm-1. Ga-As force constant reaches 1.7 mDyne/Å which is comparable to Ga-Ge force constant (1.74 mDyne/Å. Hydrogen related vibrations are nearly constant and serve as a fingerprint of GaAs diamondoids while Ga-As vibrations vary with size of diamondoids.

  12. Formation and reconstruction of Se nanoislands at the surface of thin epitaxial ZnSe layers grown on GaAs substrates

    Energy Technology Data Exchange (ETDEWEB)

    Kozlovskiy, V. I.; Krivobok, V. S., E-mail: krivobok@lebedev.ru [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation); Kuznetsov, P. I.; Nikolaev, S. N.; Onistchenko, E. E.; Pruchkina, A. A.; Temiryazev, A. G. [Russian Academy of Sciences, Kotel’nikov Institute of Radio-Engineering and Electronics (Russian Federation)

    2016-05-15

    Strained epitaxial ZnSe layers are grown on GaAs substrates by the method of vapor-phase epitaxy from metal-organic compounds. It is found that Se nanoislands with a density of 10{sup 8} to 10{sup 9} cm{sup –2} are formed at the surface of such layers. It is established that an increase in the size of Se islands and a decrease in their density take place after completion of growth. Annealing in a H{sub 2} atmosphere at a temperature higher than 260°C leads to the disappearance of Se islands and to a decrease in the surface roughness. It is shown that annealing does not lead to deterioration of the structural perfection of the epitaxial ZnSe films; rather, annealing gives rise to a decrease in the intensity of impurity–defect luminescence and to an increase in the intensity of intrinsic radiation near the bottom of the exciton band.

  13. Olkiluoto surface hydrological modelling: Update 2012 including salt transport modelling

    International Nuclear Information System (INIS)

    Karvonen, T.

    2013-11-01

    Posiva Oy is responsible for implementing a final disposal program for spent nuclear fuel of its owners Teollisuuden Voima Oyj and Fortum Power and Heat Oy. The spent nuclear fuel is planned to be disposed at a depth of about 400-450 meters in the crystalline bedrock at the Olkiluoto site. Leakages located at or close to spent fuel repository may give rise to the upconing of deep highly saline groundwater and this is a concern with regard to the performance of the tunnel backfill material after the closure of the tunnels. Therefore a salt transport sub-model was added to the Olkiluoto surface hydrological model (SHYD). The other improvements include update of the particle tracking algorithm and possibility to estimate the influence of open drillholes in a case where overpressure in inflatable packers decreases causing a hydraulic short-circuit between hydrogeological zones HZ19 and HZ20 along the drillhole. Four new hydrogeological zones HZ056, HZ146, BFZ100 and HZ039 were added to the model. In addition, zones HZ20A and HZ20B intersect with each other in the new structure model, which influences salinity upconing caused by leakages in shafts. The aim of the modelling of long-term influence of ONKALO, shafts and repository tunnels provide computational results that can be used to suggest limits for allowed leakages. The model input data included all the existing leakages into ONKALO (35-38 l/min) and shafts in the present day conditions. The influence of shafts was computed using eight different values for total shaft leakage: 5, 11, 20, 30, 40, 50, 60 and 70 l/min. The selection of the leakage criteria for shafts was influenced by the fact that upconing of saline water increases TDS-values close to the repository areas although HZ20B does not intersect any deposition tunnels. The total limit for all leakages was suggested to be 120 l/min. The limit for HZ20 zones was proposed to be 40 l/min: about 5 l/min the present day leakages to access tunnel, 25 l/min from

  14. Including Finite Surface Span Effects in Empirical Jet-Surface Interaction Noise Models

    Science.gov (United States)

    Brown, Clifford A.

    2016-01-01

    The effect of finite span on the jet-surface interaction noise source and the jet mixing noise shielding and reflection effects is considered using recently acquired experimental data. First, the experimental setup and resulting data are presented with particular attention to the role of surface span on far-field noise. These effects are then included in existing empirical models that have previously assumed that all surfaces are semi-infinite. This extended abstract briefly describes the experimental setup and data leaving the empirical modeling aspects for the final paper.

  15. GaAs Refractive Index Dependence On Carrier Density and Optimizing Terahertz Devices

    Science.gov (United States)

    Kim, Christopher; Wu, Dong Ho; Graber, Benjamin

    GaAs is used for various applications, including high speed transistors, high-efficiency photovoltaic cells, electro-optics and terahertz (THz) emitters and detectors. To date, information on the refractive index of GaAs is available only over a limited wave spectrum of 0.2-17um, where the refractive index varies from 1.3 to 5.0. As detailed information on the refractive index of GaAs at THz frequencies is not available or inadequate for our effort to develop an improved GaAs-based THz emitter, we experimentally investigated the behavior of the refractive index of GaAs for different charge carrier densities, especially with or without the presence of surface plasma. Using a Time Domain THz Spectrometer, which is capable of measuring THz pulses containing a wave spectrum over 100-3000um with a time accuracy better than 6 femtoseconds, we measured the delay of THz pulses traversing through a GaAs substrate of known thickness while modulating the charge carrier concentration. From the experimental data we estimated the refractive index for THz frequencies to vary from 3.5 to 3.8 for different charge carrier concentrations. We will discuss details of our experiments and implications of our experimental results, especially for our GaAs-based THz devices.

  16. Angle - resolved photoemission study of two phases of the GaAs(100)-c(4x4) surface

    Czech Academy of Sciences Publication Activity Database

    Cukr, Miroslav; Jiříček, Petr; Bartoš, Igor; Sadowski, J.

    2008-01-01

    Roč. 100, - (2008), 072017/1-072017/4 ISSN 1742-6588 R&D Projects: GA AV ČR IAA100100628; GA ČR GA202/07/0601 Institutional research plan: CEZ:AV0Z10100521 Keywords : gallium arsenide * molecular beam epitaxy * photoelectron spectroscopy * surface reconstruction * surface phases * electron states Subject RIV: BM - Solid Matter Physics ; Magnetism

  17. Potential energy surface for ? dissociation including spin-orbit effects

    Science.gov (United States)

    Siebert, Matthew R.; Aquino, Adelia J. A.; de Jong, Wibe A.; Granucci, Giovanni; Hase, William L.

    2012-10-01

    Previous experiments [J. Phys. Chem. A 116, 2833 (2012)] have studied the dissociation of 1,2-diiodoethane radical cation ( ? ) and found a one-dimensional distribution of translational energy, an odd finding considering most product relative translational energy distributions are two-dimensional. The goal of this study is to obtain an accurate understanding of the potential energy surface (PES) topology for the unimolecular decomposition reaction ? → C2H4I+ + I•. This is done through comparison of many single-reference electronic structure methods, coupled-cluster single-point (energy) calculations, and multi-reference energy calculations used to quantify spin-orbit (SO) coupling effects. We find that the structure of the ? reactant has a substantial effect on the role of the SO coupling on the reaction energy. Both the BHandH and MP2 theories with an ECP/6-31++G** basis set, and without SO coupling corrections, provide accurate models for the reaction energetics. MP2 theory gives an unsymmetric structure with different C-I bond lengths, resulting in a SO energy for ? similar to that for the product I-atom and a negligible SO correction to the reaction energy. In contrast, DFT gives a symmetric structure for ? , similar to that of the neutral C2H4I2 parent, resulting in a substantial SO correction and increasing the reaction energy by 6.0-6.5 kcalmol-1. Also, we find that, for this system, coupled-cluster single-point energy calculations are inaccurate, since a small change in geometry can lead to a large change in energy.

  18. Panel fabrication utilizing GaAs solar cells

    Science.gov (United States)

    Mardesich, N.

    1984-01-01

    The development of the GaAs solar cells for space applications is described. The activities in the fabrication of GaAs solar panels are outlined. Panels were fabricated while introducing improved quality control, soldering laydown and testing procedures. These panels include LIPS II, San Marco Satellite, and a low concentration panel for Rockwells' evaluation. The panels and their present status are discussed.

  19. Optical pumping of hot phonons in GaAs

    International Nuclear Information System (INIS)

    Collins, C.L.; Yu, P.Y.

    1982-01-01

    Optical pumping of hot LO phonons in GaAs has been studied as a function of the excitation photon frequency. The experimental results are in good agreement with a model calculation which includes both inter- and intra-valley electron-phonon scatterings. The GAMMA-L and GAMMA-X intervalley electron-phonon interactions in GaAs have been estimated

  20. Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

    Science.gov (United States)

    Ledentsov, N. N.; Shchukin, V. A.; Lyytikäinen, J.; Okhotnikov, O.; Cherkashin, N. A.; Shernyakov, Yu M.; Payusov, A. S.; Gordeev, N. Y.; Maximov, M. V.; Schlichting, S.; Nippert, F.; Hoffmann, A.

    2015-03-01

    We report on green (550-560 nm) electroluminescence (EL) from (Al0.5Ga0.5)0.5In0.5P-(Al0.8Ga0.2)0.5In0.5P double p-i-n heterostructures with monolayer-scale tensile strained GaP insertions in the cladding layers and light-emitting diodes (LEDs) based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy. Cross-sectional transmission electron microscopy studies indicate that GaP insertions are flat, thus the GaP-barrier substrate orientation-dependent heights should match the predictions of the flat model. At moderate current densities (~500 A/cm2) the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)-grown strictures, the EL spectra of (211) and (311)-grown devices are shifted towards shorter wavelengths (~550 nm at room temperature). At high current densities (>1 kA/cm2) a much higher EL intensity is achieved for the devices grown on high-index substrates. The integrated intensity of (311)-grown structures gradually saturates at current densities above 4 kA/cm2, whereas no saturation is revealed for (211)-grown structures up to the current densities above 14 kA/cm2. We attribute the effect to the surface orientation-dependent engineering of the GaP band structure which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p- doped (Al0.8Ga0.2)0.5In0.5P cladding layers.

  1. Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Ledentsov, N. N., E-mail: nikolay.ledentsov@v-i-systems.com; Shchukin, V. A. [VI Systems GmbH, Hardenbergstr. 7, Berlin D-10623 (Germany); Lyytikäinen, J.; Okhotnikov, O. [Optoelectronics Research Centre, Tampere University of Technology, Tampere FI-33720 (Finland); Shernyakov, Yu. M.; Payusov, A. S.; Gordeev, N. Yu.; Maximov, M. V. [A. F. Ioffe Physical Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg 194021 (Russian Federation); Schlichting, S.; Nippert, F.; Hoffmann, A. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, Berlin D-10623 (Germany)

    2014-11-03

    We report on green (550–560 nm) electroluminescence (EL) from (Al{sub 0.5}Ga{sub 0.5}){sub 0.5}In{sub 0.5}P-(Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P double p-i-n heterostructures with monolayer-scale GaP insertions in the cladding layers and light-emitting diodes based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy. At moderate current densities (∼500 A/cm{sup 2}), the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)-grown strictures, the EL spectra of (211) and (311)-grown devices are shifted towards shorter wavelengths (∼550 nm at room temperature). At high current densities (>1 kA/cm{sup 2}), a much higher EL intensity is achieved for the devices grown on high-index substrates. The integrated intensity of (311)-grown structures gradually saturates at current densities above 4 kA/cm{sup 2}, whereas no saturation is revealed for (211)-grown structures up to the current densities above 14 kA/cm{sup 2}. We attribute the effect to the surface orientation-dependent engineering of the GaP band structure, which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p-doped (Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P cladding layers.

  2. Photoemission from alfa and beta phases of the GaAs(001)-c(4x4) surface

    Czech Academy of Sciences Publication Activity Database

    Jiříček, Petr; Cukr, Miroslav; Bartoš, Igor; Sadowski, J.

    2009-01-01

    Roč. 603, č. 20 (2009), s. 3088-3093 ISSN 0039-6028 R&D Projects: GA ČR GA202/07/0601; GA AV ČR IAA100100628 Institutional research plan: CEZ:AV0Z10100521 Keywords : gallium arsenide * angle resolved photoemission * synchrotron radiation photoelectron spectroscopy * molecular beam epitaxy * surface core level shift Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.798, year: 2009

  3. Peeled film GaAs solar cell development

    Science.gov (United States)

    Wilt, D. M.; Thomas, R. D.; Bailey, S. G.; Brinker, D. J.; Deangelo, F. L.

    1990-01-01

    Thin-film, single-crystal gallium arsenide (GaAs) solar cells could exhibit a specific power approaching 700 W/kg including coverglass. A simple process has been described whereby epitaxial GaAs layers are peeled from a reusable substrate. This process takes advantage of the extreme selectivity of the etching rate of aluminum arsenide (AlAs) over GaAs in dilute hydrofluoric acid. The feasibility of using the peeled film technique to fabricate high-efficiency, low-mass GaAs solar cells is presently demonstrated. A peeled film GaAs solar cell was successfully produced. The device, although fractured and missing the aluminum gallium arsenide window and antireflective coating, had a Voc of 874 mV and a fill factor of 68 percent under AM0 illumination.

  4. Peeled film GaAs solar cell development

    Science.gov (United States)

    Wilt, D. M.; Thomas, R. D.; Bailey, S. G.; Brinker, D. J.; Deangelo, F. L.

    Thin-film, single-crystal gallium arsenide (GaAs) solar cells could exhibit a specific power approaching 700 W/kg including coverglass. A simple process has been described whereby epitaxial GaAs layers are peeled from a reusable substrate. This process takes advantage of the extreme selectivity of the etching rate of aluminum arsenide (AlAs) over GaAs in dilute hydrofluoric acid. The feasibility of using the peeled film technique to fabricate high-efficiency, low-mass GaAs solar cells is presently demonstrated. A peeled film GaAs solar cell was successfully produced. The device, although fractured and missing the aluminum gallium arsenide window and antireflective coating, had a Voc of 874 mV and a fill factor of 68 percent under AM0 illumination.

  5. On the evolution of InAs thin films grown by molecular beam epitaxy on the GaAs(001) surface

    International Nuclear Information System (INIS)

    Grabowski, Jan

    2010-01-01

    Semiconductor nanostructures are currently of high interest for a wide variety of electronic and optoelectronic applications. A large number of devices, in particular for the optical data transmission in the long-wavelength range, essential in modern communication, are based on InAs/GaAs quantum dot (QD) structures. Though the properties of the InAs/GaAs QDs have been extensively studied, only little is known about the formation and structure of the wetting layer (WL) yet. In the present work, the pathway of the InAs WL evolution is studied in detail. For this purpose, InAs thin films in the range of one monolayer (ML) are deposited on the GaAs(001) surface by molecular beam epitaxy (MBE) and studied by reflection high energy electron diffraction (RHEED) and in particular by scanning tunneling microscopy (STM). The InAs thin films are grown in both typical growth regimes, on the GaAs-c(4 x 4) and the GaAs-β2(2 x 4) reconstructed surface, in a variety of thicknesses starting from submonolayers with 0.09 ML of InAs up to 1.65 ML of InAs exceeding the critical thickness for QD growth. In principle, three growth stages are found. At low InAs coverages, the indium adsorbs in agglomerations of typically eight In atoms at energetically preferable surface sites. In the STM images, the signatures of these In agglomerations appear with a clear bright contrast. A structural model for the initial formation of these signatures is presented, and its electronic and strain related properties are discussed. At an InAs coverage of about 0.67ML the initial surface transforms into a (4 x 3) reconstructed In 2/3 Ga 1/3 As ML and the detailed structure and strain properties of this surface are unraveled. On top of the InGaAs ML further deposited InAs forms a second layer, characterized by a typical zig-zag alignment of (2 x 4) reconstructed unit cells, with an alternating α2/α2-m configuration. In contrast to the previous surface reconstructions, where structural strain is

  6. On the evolution of InAs thin films grown by molecular beam epitaxy on the GaAs(001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Grabowski, Jan

    2010-12-14

    Semiconductor nanostructures are currently of high interest for a wide variety of electronic and optoelectronic applications. A large number of devices, in particular for the optical data transmission in the long-wavelength range, essential in modern communication, are based on InAs/GaAs quantum dot (QD) structures. Though the properties of the InAs/GaAs QDs have been extensively studied, only little is known about the formation and structure of the wetting layer (WL) yet. In the present work, the pathway of the InAs WL evolution is studied in detail. For this purpose, InAs thin films in the range of one monolayer (ML) are deposited on the GaAs(001) surface by molecular beam epitaxy (MBE) and studied by reflection high energy electron diffraction (RHEED) and in particular by scanning tunneling microscopy (STM). The InAs thin films are grown in both typical growth regimes, on the GaAs-c(4 x 4) and the GaAs-{beta}2(2 x 4) reconstructed surface, in a variety of thicknesses starting from submonolayers with 0.09 ML of InAs up to 1.65 ML of InAs exceeding the critical thickness for QD growth. In principle, three growth stages are found. At low InAs coverages, the indium adsorbs in agglomerations of typically eight In atoms at energetically preferable surface sites. In the STM images, the signatures of these In agglomerations appear with a clear bright contrast. A structural model for the initial formation of these signatures is presented, and its electronic and strain related properties are discussed. At an InAs coverage of about 0.67ML the initial surface transforms into a (4 x 3) reconstructed In{sub 2/3}Ga{sub 1/3}As ML and the detailed structure and strain properties of this surface are unraveled. On top of the InGaAs ML further deposited InAs forms a second layer, characterized by a typical zig-zag alignment of (2 x 4) reconstructed unit cells, with an alternating {alpha}2/{alpha}2-m configuration. In contrast to the previous surface reconstructions, where

  7. Single-Crystal Y2O3 Epitaxially on GaAs(001 and (111 Using Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Y. H. Lin

    2015-10-01

    Full Text Available Single-crystal atomic-layer-deposited (ALD Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\ films 2 nm thick were epitaxially grown on molecular beam epitaxy (MBE GaAs(001-4 \\(\\times\\ 6 and GaAs(111A-2 \\(\\times\\ 2 reconstructed surfaces. The in-plane epitaxy between the ALD-oxide films and GaAs was observed using \\textit{in-situ} reflection high-energy electron diffraction in our uniquely designed MBE/ALD multi-chamber system. More detailed studies on the crystallography of the hetero-structures were carried out using high-resolution synchrotron radiation X-ray diffraction. When deposited on GaAs(001, the Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\ films are of a cubic phase and have (110 as the film normal, with the orientation relationship being determined: Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\(\\(110\\[\\(001\\][\\(\\overline{1}10\\]//GaAs(\\(001\\[\\(110\\][\\(1\\overline{1}0\\]. On GaAs(\\(111\\A, the Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\ films are also of a cubic phase with (\\(111\\ as the film normal, having the orientation relationship of Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\(\\(111\\[\\(2\\overline{1}\\overline{1}\\] [\\(01\\overline{1}\\]//GaAs (\\(111\\ [\\(\\overline{2}11\\][\\(0\\overline{1}1\\]. The relevant orientation for the present/future integrated circuit platform is (\\(001\\. The ALD-Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\/GaAs(\\(001\\-4 \\(\\times\\ 6 has shown excellent electrical properties. These include small frequency dispersion in the capacitance-voltage CV curves at accumulation of ~7% and ~14% for the respective p- and n-type samples with the measured frequencies of 1 MHz to 100 Hz. The interfacial trap density (Dit is low of ~10\\(^{12}\\ cm\\(^{−2}\\eV\\(^{−1}\\ as extracted from measured quasi-static CVs. The frequency dispersion at accumulation and the D\\(_{it}\\ are the lowest ever achieved among all the ALD-oxides on GaAs(\\(001\\.

  8. Structure and homoepitaxial growth of GaAs(6 3 1)

    International Nuclear Information System (INIS)

    Mendez-Garcia, V.H.; Ramirez-Arenas, F.J.; Lastras-Martinez, A.; Cruz-Hernandez, E.; Pulzara-Mora, A.; Rojas-Ramirez, J.S.; Lopez-Lopez, M.

    2006-01-01

    We have studied the surface atomic structure of GaAs(6 3 1), and the GaAs growth by molecular beam epitaxy (MBE) on this plane. After the oxide desorption process at 585 deg. Creflection high-energy electron diffraction (RHEED) showed along the [-1 2 0] direction a 2x surface reconstruction for GaAs(6 3 1)A, and a 1x pattern was observed for GaAs(6 3 1)B. By annealing the substrates for 60 min, we observed that on the A surface appeared small hilly-like features, while on GaAs(6 3 1)B surface pits were formed. For GaAs(6 3 1)A, 500 nm-thick GaAs layers were grown at 585 deg. C. The atomic force microscopy (AFM) images at the end of growth showed the self-formation of nanoscale structures with a pyramidal shape enlarged along the [5-9-3] direction. Transversal views of the bulk-truncated GaAs(6 3 1) surface model showed arrays of atomic grooves along this direction, which could influence the formation of the pyramidal structures

  9. Wavelength dependent laser-induced etching of Cr–O doped GaAs ...

    Indian Academy of Sciences (India)

    Administrator

    The laser induced etching of semi-insulating GaAs 〈100〉 is carried out to create porous structure ... Keywords. Laser-induced etching; intermediate state; nanostructure; SEM; AFM. 1. Introduction. Laser-induced etching, an improved etching process, is very ... into the properties and applications of GaAs, the surface.

  10. Nonlocal continuum-based modeling of breathing mode of nanowires including surface stress and surface inertia effects

    International Nuclear Information System (INIS)

    Ghavanloo, Esmaeal; Fazelzadeh, S. Ahmad; Rafii-Tabar, Hashem

    2014-01-01

    Nonlocal and surface effects significantly influence the mechanical response of nanomaterials and nanostructures. In this work, the breathing mode of a circular nanowire is studied on the basis of the nonlocal continuum model. Both the surface elastic properties and surface inertia effect are included. Nanowires can be modeled as long cylindrical solid objects. The classical model is reformulated using the nonlocal differential constitutive relations of Eringen and Gurtin–Murdoch surface continuum elasticity formalism. A new frequency equation for the breathing mode of nanowires, including small scale effect, surface stress and surface inertia is presented by employing the Bessel functions. Numerical results are computed, and are compared to confirm the validity and accuracy of the proposed method. Furthermore, the model is used to elucidate the effect of nonlocal parameter, the surface stress, the surface inertia and the nanowire orientation on the breathing mode of several types of nanowires with size ranging from 0.5 to 4 nm. Our results reveal that the combined surface and small scale effects are significant for nanowires with diameter smaller than 4 nm.

  11. Nonlocal continuum-based modeling of breathing mode of nanowires including surface stress and surface inertia effects

    Science.gov (United States)

    Ghavanloo, Esmaeal; Fazelzadeh, S. Ahmad; Rafii-Tabar, Hashem

    2014-05-01

    Nonlocal and surface effects significantly influence the mechanical response of nanomaterials and nanostructures. In this work, the breathing mode of a circular nanowire is studied on the basis of the nonlocal continuum model. Both the surface elastic properties and surface inertia effect are included. Nanowires can be modeled as long cylindrical solid objects. The classical model is reformulated using the nonlocal differential constitutive relations of Eringen and Gurtin-Murdoch surface continuum elasticity formalism. A new frequency equation for the breathing mode of nanowires, including small scale effect, surface stress and surface inertia is presented by employing the Bessel functions. Numerical results are computed, and are compared to confirm the validity and accuracy of the proposed method. Furthermore, the model is used to elucidate the effect of nonlocal parameter, the surface stress, the surface inertia and the nanowire orientation on the breathing mode of several types of nanowires with size ranging from 0.5 to 4 nm. Our results reveal that the combined surface and small scale effects are significant for nanowires with diameter smaller than 4 nm.

  12. Performance of a GaAs electron source

    International Nuclear Information System (INIS)

    Calabrese, R.; Ciullo, G.; Della Mea, G.; Egeni, G.P.; Guidi, V.; Lamanna, G.; Lenisa, P.; Maciga, B.; Rigato, V.; Rudello, V.; Tecchio, L.; Yang, B.; Zandolin, S.

    1994-01-01

    We discuss the performance improvement of a GaAs electron source. High quantum yield (14%) and constant current extraction (1 mA for more than four weeks) are achieved after a little initial decay. These parameters meet the requirements for application of the GaAs photocathode as a source for electron cooling devices. We also present the preliminary results of a surface analysis experiment, carried out by means of the RBS technique to check the hypothesis of cesium evaporation from the surface when the photocathode is in operation. (orig.)

  13. Nanocoating of titanium implant surfaces with organic molecules. Polysaccharides including glycosaminoglycans

    DEFF Research Database (Denmark)

    Gurzawska, Katarzyna Aleksandra; Svava, Rikke; Jørgensen, Niklas Rye

    2012-01-01

    Long-term stability of titanium implants are dependent on a variety of factors. Nanocoating with organic molecules is one of the method used to improve osseointegration. Nanoscale modification of titanium implants affects surface properties, such as hydrophilicity, biochemical bonding capacity...... with focus on polysaccharides including glycosaminoglycans, and how these molecules change surface properties, cell reactions and affect on osseointegartion. The included in vitro studies demonstrated increased cell adhesion, proliferation and mineralization of a number of the tested polysaccharide...

  14. Atomic hydrogen cleaning of GaAs photocathodes

    International Nuclear Information System (INIS)

    Poelker, M.; Price, J.; Sinclair, C.

    1997-01-01

    It is well known that surface contaminants on semiconductors can be removed when samples are exposed to atomic hydrogen. Atomic H reacts with oxides and carbides on the surface, forming compounds that are liberated and subsequently pumped away. Experiments at Jefferson lab with bulk GaAs in a low-voltage ultra-high vacuum H cleaning chamber have resulted in the production of photocathodes with high photoelectron yield (i.e., quantum efficiency) and long lifetime. A small, portable H cleaning apparatus also has been constructed to successfully clean GaAs samples that are later removed from the vacuum apparatus, transported through air and installed in a high-voltage laser-driven spin-polarized electron source. These results indicate that this method is a versatile and robust alternative to conventional wet chemical etching procedures usually employed to clean bulk GaAs

  15. (In,Ga,Al)P-GaP laser diodes grown on high-index GaAs surfaces emitting in the green, yellow and bright red spectral range

    Science.gov (United States)

    Ledentsov, N. N.; Shchukin, V. A.; Shernyakov, Yu M.; Kulagina, M. M.; Payusov, A. S.; Gordeev, N. Yu; Maximov, M. V.; Cherkashin, N. A.

    2017-02-01

    We report on low threshold current density (<400 A cm-2) injection lasing in (Al x Ga1-x )0.5In0.5P-GaAs-based diodes down to the green spectral range (<570 nm). The epitaxial structures are grown on high-index (611)A and (211)A GaAs substrates by metal-organic vapor phase epitaxy and contain tensile-strained GaP-enriched insertions aimed at reflection of the injected nonequilibrium electrons preventing their escape from the active region. Extended waveguide concept results in a vertical beam divergence with a full width at half maximum of 15° for (611)A substrates. The lasing at the wavelength of 569 nm is realized at 85 K. In an orange-red laser diode structure low threshold current density (190 A cm-2) in the orange spectral range (598 nm) is realized at 85 K. The latter devices demonstrated room temperature lasing at 628 nm at ˜2 kA cm-2 and a total power above 3 W. The red laser diodes grown on (211)A substrates demonstrated a far field characteristic for vertically multimode lasing indicating a lower optical confinement factor for the fundamental mode as compared to the devices grown on (611)A. However, as expected from previous research, the temperature stability of the threshold current and the wavelength stability were significantly higher for (211)A-grown structures.

  16. A light reflecting apparatus including a multi-aberration light reflecting surface

    Science.gov (United States)

    Sawicki, R.H.; Sweatt, W.

    1985-11-21

    A light reflecting apparatus including a multi-aberration bendable light reflecting surface is disclosed herein. This apparatus includes a structural assembly comprised of a rectangular plate which is resiliently bendable, to a limited extent, and which has a front side defining the multi-aberration light reflecting surface and an opposite back side, and a plurality of straight leg members rigidly connected with the back side of the plate and extending rearwardly therefrom. The apparatus also includes a number of different adjustment mechanisms, each of which is connected with specific ones of the leg members. These mechanisms are adjustably movable in different ways for applying corresponding forces to the leg members in order to bend the rectangular plate and light reflecting surface into different predetermined curvatures and which specifically include quadratic and cubic curvatures corresponding to different optical aberrations.

  17. Self-healing in fractured GaAs nanowires

    International Nuclear Information System (INIS)

    Wang Jun; Lu Chunsheng; Wang Qi; Xiao Pan; Ke Fujiu; Bai Yilong; Shen Yaogen; Wang Yanbo; Chen Bin; Liao Xiaozhou; Gao Huajian

    2012-01-01

    Molecular dynamics simulations are performed to investigate a spontaneous self-healing process in fractured GaAs nanowires with a zinc blende structure. The results show that such self-healing can indeed occur via rebonding of Ga and As atoms across the fracture surfaces, but it can be strongly influenced by several factors, including wire size, number of healing cycles, temperature, fracture morphology, oriented attachment and atomic diffusion. For example, it is found that the self-healing capacity is reduced by 46% as the lateral dimension of the wire increases from 2.3 to 9.2 nm, and by 64% after 24 repeated cycles of fracture and healing. Other factors influencing the self-healing behavior are also discussed.

  18. Molecular beam epitaxial growth and structural characterization of ZnS on (001) GaAs

    Science.gov (United States)

    Benz, R. G., II; Huang, P. C.; Stock, S. R.; Summers, C. J.

    1988-01-01

    The effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrates by molecular beam epitaxy is reported. Reflection high energy electron diffraction indicated that nucleation at high temperatures produced more planar surfaces than nucleation at low temperatures, but the crystalline quality as assessed by X-ray double crystal diffractometry is relatively independent of nucleation temperature. A critical factor in layer quality was the initial roughness of the GaAs surfaces.

  19. Terahertz radiation from delta-doped GaAs

    DEFF Research Database (Denmark)

    Birkedal, Dan; Hansen, Ole; Sørensen, Claus Birger

    1994-01-01

    Terahertz pulse emission from four different delta-doped molecular beam epitaxially grown GaAs samples is studied. We observe a decrease of the emitted THz pulse amplitude as the distance of the delta-doped layer from the surface is increased, and a change in polarity of the THz pulses as compare...

  20. Full-dimensional diabatic potential energy surfaces including dissociation: the ²E″ state of NO₃.

    Science.gov (United States)

    Eisfeld, Wolfgang; Vieuxmaire, Olivier; Viel, Alexandra

    2014-06-14

    A scheme to produce accurate full-dimensional coupled diabatic potential energy surfaces including dissociative regions and suitable for dynamical calculations is proposed. The scheme is successfully applied to model the two-sheeted surface of the (2)E″ state of the NO3 radical. An accurate potential energy surface for the NO₃⁻ anion ground state is developed as well. Both surfaces are based on high-level ab initio calculations. The model consists of a diabatic potential matrix, which is expanded to higher order in terms of symmetry polynomials of symmetry coordinates. The choice of coordinates is key for the accuracy of the obtained potential energy surfaces and is discussed in detail. A second central aspect is the generation of reference data to fit the expansion coefficients of the model for which a stochastic approach is proposed. A third ingredient is a new and simple scheme to handle problematic regions of the potential energy surfaces, resulting from the massive undersampling by the reference data unavoidable for high-dimensional problems. The final analytical diabatic surfaces are used to compute the lowest vibrational levels of NO₃⁻ and the photo-electron detachment spectrum of NO₃⁻ leading to the neutral radical in the (2)E″ state by full dimensional multi-surface wave-packet propagation for NO3 performed using the Multi-Configuration Time Dependent Hartree method. The achieved agreement of the simulations with available experimental data demonstrates the power of the proposed scheme and the high quality of the obtained potential energy surfaces.

  1. Improving weather predictability by including land-surface model parameter uncertainty

    Science.gov (United States)

    Orth, Rene; Dutra, Emanuel; Pappenberger, Florian

    2016-04-01

    The land surface forms an important component of Earth system models and interacts nonlinearly with other parts such as ocean and atmosphere. To capture the complex and heterogenous hydrology of the land surface, land surface models include a large number of parameters impacting the coupling to other components of the Earth system model. Focusing on ECMWF's land-surface model HTESSEL we present in this study a comprehensive parameter sensitivity evaluation using multiple observational datasets in Europe. We select 6 poorly constrained effective parameters (surface runoff effective depth, skin conductivity, minimum stomatal resistance, maximum interception, soil moisture stress function shape, total soil depth) and explore their sensitivity to model outputs such as soil moisture, evapotranspiration and runoff using uncoupled simulations and coupled seasonal forecasts. Additionally we investigate the possibility to construct ensembles from the multiple land surface parameters. In the uncoupled runs we find that minimum stomatal resistance and total soil depth have the most influence on model performance. Forecast skill scores are moreover sensitive to the same parameters as HTESSEL performance in the uncoupled analysis. We demonstrate the robustness of our findings by comparing multiple best performing parameter sets and multiple randomly chosen parameter sets. We find better temperature and precipitation forecast skill with the best-performing parameter perturbations demonstrating representativeness of model performance across uncoupled (and hence less computationally demanding) and coupled settings. Finally, we construct ensemble forecasts from ensemble members derived with different best-performing parameterizations of HTESSEL. This incorporation of parameter uncertainty in the ensemble generation yields an increase in forecast skill, even beyond the skill of the default system. Orth, R., E. Dutra, and F. Pappenberger, 2016: Improving weather predictability by

  2. Systems and methods for producing metal clusters; functionalized surfaces; and droplets including solvated metal ions

    Science.gov (United States)

    Cooks, Robert Graham; Li, Anyin; Luo, Qingjie

    2017-08-01

    The invention generally relates to systems and methods for producing metal clusters; functionalized surfaces; and droplets including solvated metal ions. In certain aspects, the invention provides methods that involve providing a metal and a solvent. The methods additionally involve applying voltage to the solvated metal to thereby produce solvent droplets including ions of the metal containing compound, and directing the solvent droplets including the metal ions to a target. In certain embodiments, once at the target, the metal ions can react directly or catalyze reactions.

  3. The electronic and optical properties of quaternary GaAs1-x-y N x Bi y alloy lattice-matched to GaAs: a first-principles study.

    Science.gov (United States)

    Ma, Xiaoyang; Li, Dechun; Zhao, Shengzhi; Li, Guiqiu; Yang, Kejian

    2014-01-01

    First-principles calculations based on density functional theory have been performed for the quaternary GaAs1-x-y N x Bi y alloy lattice-matched to GaAs. Using the state-of-the-art computational method with the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional, electronic, and optical properties were obtained, including band structures, density of states (DOSs), dielectric function, absorption coefficient, refractive index, energy loss function, and reflectivity. It is found that the lattice constant of GaAs1-x-y N x Bi y alloy with y/x =1.718 can match to GaAs. With the incorporation of N and Bi into GaAs, the band gap of GaAs1-x-y N x Bi y becomes small and remains direct. The calculated optical properties indicate that GaAs1-x-y N x Bi y has higher optical efficiency as it has less energy loss than GaAs. In addition, it is also found that the electronic and optical properties of GaAs1-x-y N x Bi y alloy can be further controlled by tuning the N and Bi compositions in this alloy. These results suggest promising applications of GaAs1-x-y N x Bi y quaternary alloys in optoelectronic devices.

  4. Study of the surface of GaAs after etching in high-frequency and glow discharge plasma by atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Dunaev, A. V., E-mail: dunaev-80@mail.ru; Murin, D. B.; Pivovarenok, S. A. [Ivanovo State University of Chemistry and Technology (Russian Federation)

    2016-02-15

    The quality of the surface of a semiconductor structure after plasma-chemical etching in plasma of HCl/Ar, HCl/Cl{sub 2}, HCl/H{sub 2} mixtures, and freon R12 plasma is studied. It is shown that the optimal combination of the etch rate and surface roughness is achieved in the hydrogen chloride and argon mixture. In mixtures with hydrogen, the etch rates are too low for high surface quality; in mixtures with chlorine, the surface roughness exceeds technologically acceptable values due to high etch rates. The high-frequency discharge in freon R12 can be effectively used to etch semiconductors, providing technologically acceptable interaction rates, while retaining a uniform and clean surface.

  5. Evaluation of the susceptibility to pitting corrosion of structural steels, including steels with modified surface

    International Nuclear Information System (INIS)

    Lunarska, E.; Nikiforow, K.

    2001-01-01

    Although the low alloy ferrite-perlite and bainite-martensite steels mostly undergo the general corrosion, pitting corrosion occurring under certain conditions jeopardizes the safety of installations, causing perforation of walls or initiation of crack. On the basis of electrochemical, corrosion and microscopic examinations, the conditions simulating typical industrial corrosion environments, containing Cl - ions have been selected, to which the parts of machines, devices and installation are subjected. The test parameters provide the preferential pitting corrosion without prevailing general corrosion, and provide the similar type of corrosion of different kinds of ferrite-perlite and bainite-martensite steels, including steels with modified surface layer. The proposed express method allows to evaluate the susceptibility to pitting corrosion and to evaluate the effect of surface modification on susceptibility to pitting corrosion in environments containing Cl - ions. The method may be applied for the proper selection of materials exploited under pitting corrosion conditions and for preparation of precorroded samples for mechanical testing. (author)

  6. SHARC: ab Initio Molecular Dynamics with Surface Hopping in the Adiabatic Representation Including Arbitrary Couplings.

    Science.gov (United States)

    Richter, Martin; Marquetand, Philipp; González-Vázquez, Jesús; Sola, Ignacio; González, Leticia

    2011-05-10

    We present a semiclassical surface-hopping method which is able to treat arbitrary couplings in molecular systems including all degrees of freedom. A reformulation of the standard surface-hopping scheme in terms of a unitary transformation matrix allows for the description of interactions like spin-orbit coupling or transitions induced by laser fields. The accuracy of our method is demonstrated in two systems. The first one, consisting of two model electronic states, validates the semiclassical approach in the presence of an electric field. In the second one, the dynamics in the IBr molecule in the presence of spin-orbit coupling after laser excitation is investigated. Due to an avoided crossing that originates from spin-orbit coupling, IBr dissociates into two channels: I + Br((2)P3/2) and I + Br*((2)P1/2). In both systems, the obtained results are in very good agreement with those calculated from exact quantum dynamical simulations.

  7. A novel technique for including surface tension in PLIC-VOF methods

    Energy Technology Data Exchange (ETDEWEB)

    Meier, M.; Yadigaroglu, G. [Swiss Federal Institute of Technology, Nuclear Engineering Lab. ETH-Zentrum, CLT, Zurich (Switzerland); Smith, B. [Paul Scherrer Inst. (PSI), Villigen (Switzerland). Lab. for Thermal-Hydraulics

    2002-02-01

    Various versions of Volume-of-Fluid (VOF) methods have been used successfully for the numerical simulation of gas-liquid flows with an explicit tracking of the phase interface. Of these, Piecewise-Linear Interface Construction (PLIC-VOF) appears as a fairly accurate, although somewhat more involved variant. Including effects due to surface tension remains a problem, however. The most prominent methods, Continuum Surface Force (CSF) of Brackbill et al. and the method of Zaleski and co-workers (both referenced later), both induce spurious or 'parasitic' currents, and only moderate accuracy in regards to determining the curvature. We present here a new method to determine curvature accurately using an estimator function, which is tuned with a least-squares-fit against reference data. Furthermore, we show how spurious currents may be drastically reduced using the reconstructed interfaces from the PLIC-VOF method. (authors)

  8. Consistent retrieval of land surface radiation products from EO, including traceable uncertainty estimates

    Science.gov (United States)

    Kaminski, Thomas; Pinty, Bernard; Voßbeck, Michael; Lopatka, Maciej; Gobron, Nadine; Robustelli, Monica

    2017-05-01

    Earth observation (EO) land surface products have been demonstrated to provide a constraint on the terrestrial carbon cycle that is complementary to the record of atmospheric carbon dioxide. We present the Joint Research Centre Two-stream Inversion Package (JRC-TIP) for retrieval of variables characterising the state of the vegetation-soil system. The system provides a set of land surface variables that satisfy all requirements for assimilation into the land component of climate and numerical weather prediction models. Being based on a 1-D representation of the radiative transfer within the canopy-soil system, such as those used in the land surface components of advanced global models, the JRC-TIP products are not only physically consistent internally, but they also achieve a high degree of consistency with these global models. Furthermore, the products are provided with full uncertainty information. We describe how these uncertainties are derived in a fully traceable manner without any hidden assumptions from the input observations, which are typically broadband white sky albedo products. Our discussion of the product uncertainty ranges, including the uncertainty reduction, highlights the central role of the leaf area index, which describes the density of the canopy. We explain the generation of products aggregated to coarser spatial resolution than that of the native albedo input and describe various approaches to the validation of JRC-TIP products, including the comparison against in situ observations. We present a JRC-TIP processing system that satisfies all operational requirements and explain how it delivers stable climate data records. Since many aspects of JRC-TIP are generic, the package can serve as an example of a state-of-the-art system for retrieval of EO products, and this contribution can help the user to understand advantages and limitations of such products.

  9. Comparative study of GaN and GaAs photocathodes

    Science.gov (United States)

    Qiao, Jianliang; Chang, Benkang; Yang, Zhi; Tian, Si; Gao, Youtang

    2008-02-01

    Taking GaAs and GaN as representation, negative electron affinity (NEA) photocathode has many virtues, such as high quantum efficiency, low dark current, concentrated electrons energy distribution and angle distribution, adjustive long-wave threshold, great potential to extend the long-wave spectral response waveband. Therefore it plays more and more important effect in high performance image intensifiers and polarized electron sources. GaN NEA photocathode and GaAs NEA photocathode are very similar because they all belong to III-V compound. But, GaN photocathode and GaAs photocathode have many difference in such aspects as preparation process, activation manners, stability and application field etc. In this paper, using the multi-information measurement and evaluation system of photocathode, the preparation processes of native reflection-mode GaN photocathode and GaAs photocathode are studied. The different activation manners of GaN photocathode and GaAs photocathode are compared and analyzed. The spectral response and stability of the two kind of photocathode are compared also. The experiments indicate: the atomically clean degree of NEA photocathode surface and the structure of activation layer are the main factors that influence photocathode sensitivity and stability after activation. GaN photocathode and GaAs photocathode have good NEA property and large quantum yield. Compare with GaAs photocathode, GaN photocathode has high stability, and the decay of the quantum yield is comparatively slow.

  10. Oxidation of the GaAs semiconductor at the Al2O3/GaAs junction.

    Science.gov (United States)

    Tuominen, Marjukka; Yasir, Muhammad; Lång, Jouko; Dahl, Johnny; Kuzmin, Mikhail; Mäkelä, Jaakko; Punkkinen, Marko; Laukkanen, Pekka; Kokko, Kalevi; Schulte, Karina; Punkkinen, Risto; Korpijärvi, Ville-Markus; Polojärvi, Ville; Guina, Mircea

    2015-03-14

    Atomic-scale understanding and processing of the oxidation of III-V compound-semiconductor surfaces are essential for developing materials for various devices (e.g., transistors, solar cells, and light emitting diodes). The oxidation-induced defect-rich phases at the interfaces of oxide/III-V junctions significantly affect the electrical performance of devices. In this study, a method to control the GaAs oxidation and interfacial defect density at the prototypical Al2O3/GaAs junction grown via atomic layer deposition (ALD) is demonstrated. Namely, pre-oxidation of GaAs(100) with an In-induced c(8 × 2) surface reconstruction, leading to a crystalline c(4 × 2)-O interface oxide before ALD of Al2O3, decreases band-gap defect density at the Al2O3/GaAs interface. Concomitantly, X-ray photoelectron spectroscopy (XPS) from these Al2O3/GaAs interfaces shows that the high oxidation state of Ga (Ga2O3 type) decreases, and the corresponding In2O3 type phase forms when employing the c(4 × 2)-O interface layer. Detailed synchrotron-radiation XPS of the counterpart c(4 × 2)-O oxide of InAs(100) has been utilized to elucidate the atomic structure of the useful c(4 × 2)-O interface layer and its oxidation process. The spectral analysis reveals that three different oxygen sites, five oxidation-induced group-III atomic sites with core-level shifts between -0.2 eV and +1.0 eV, and hardly any oxygen-induced changes at the As sites form during the oxidation. These results, discussed within the current atomic model of the c(4 × 2)-O interface, provide insight into the atomic structures of oxide/III-V interfaces and a way to control the semiconductor oxidation.

  11. Synthesis of GaAs quantum dots on Si-layers on AlGaAs films grown on GaAs(100) substrates

    International Nuclear Information System (INIS)

    Mendez-Garcia, V. H.; Zamora-Peredo, L.; Saucedo-Zeni, N.

    2002-01-01

    In this work we report a novel method for obtaining GaAs quantum dots by molecular beam epitaxy (MBE) on an AlGaAs underlying film. We propose to use a Si monolayer (ML) grown on AlGaAs, in order to induce a 3D nucleation during the GaAs overgrowth. The samples were prepared in a Riber 32P MBE system employing undoped Si-GaAs(100) substrates. First, a 500 nm thick layer of Al x Ga 1-x As was grown with a nominal concentration x=0.35. Several samples were grown in order to analyze the effects of changing the Si interlayer thickness, and the amount of GaAs overgrowth, on the final structures. Previous to the Si-exposure, the AlGaAs presented a (1x3) surface reconstruction which gradually turned to a (3x1) structure when the Si-thickness was 1 ML, as observed in the reflection high-energy electron diffraction (RHEED) patterns. When the GaAs overgrowth started on this surface, transmission RHEED spots appeared and showed a considerable increase in intensity until reaching a maximum. This behavior is typical from a 3D island growth. If the GaAs overgrowth continues, the initial streaky RHEED patterns recovered indicating a 2D-growth. Thus, we prepared a sample stopping the GaAs overgrowth at the time when the diffraction 3D spot reached the maximum intensity, equivalent to 2ML of GaAs. The sample surface was analyzed in air by atomic force microscopy (AFM). Islands of 1.5 nm-height and 20x20 nm of base were clearly observed, these dimensions are suitable for applications in quantum dots. (Authors)

  12. Gallium arsenide (GaAs) quantum photonic waveguide circuits

    Science.gov (United States)

    Wang, Jianwei; Santamato, Alberto; Jiang, Pisu; Bonneau, Damien; Engin, Erman; Silverstone, Joshua W.; Lermer, Matthias; Beetz, Johannes; Kamp, Martin; Höfling, Sven; Tanner, Michael G.; Natarajan, Chandra M.; Hadfield, Robert H.; Dorenbos, Sander N.; Zwiller, Val; O'Brien, Jeremy L.; Thompson, Mark G.

    2014-09-01

    Integrated quantum photonics is a promising approach for future practical and large-scale quantum information processing technologies, with the prospect of on-chip generation, manipulation and measurement of complex quantum states of light. The gallium arsenide (GaAs) material system is a promising technology platform, and has already successfully demonstrated key components including waveguide integrated single-photon sources and integrated single-photon detectors. However, quantum circuits capable of manipulating quantum states of light have so far not been investigated in this material system. Here, we report GaAs photonic circuits for the manipulation of single-photon and two-photon states. Two-photon quantum interference with a visibility of 94.9±1.3% was observed in GaAs directional couplers. Classical and quantum interference fringes with visibilities of 98.6±1.3% and 84.4±1.5% respectively were demonstrated in Mach-Zehnder interferometers exploiting the electro-optic Pockels effect. This work paves the way for a fully integrated quantum technology platform based on the GaAs material system.

  13. Epitaxial growth of Bi ultra-thin films on GaAs by electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Plaza, M. [Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid (Spain); Abuin, M. [Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid (Spain); Unidad Asociada IQFR(CSIC)-UCM, Madrid 28040 (Spain); Mascaraque, A., E-mail: arantzazu.mascaraque@fis.ucm.es [Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid (Spain); Unidad Asociada IQFR(CSIC)-UCM, Madrid 28040 (Spain); Gonzalez-Barrio, M.A. [Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid (Spain); Unidad Asociada IQFR(CSIC)-UCM, Madrid 28040 (Spain); Perez, L. [Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid (Spain); Instituto de Sistemas Optoelectronicos y Microtecnologia, Universidad Politecnica de Madrid, 28040 Madrid (Spain)

    2012-05-15

    Highlights: Black-Right-Pointing-Pointer Electrodeposition of Bi films on GaAs substrates with different orientations. Black-Right-Pointing-Pointer Ultra thin films - 50 nm - are continuous and smooth. Black-Right-Pointing-Pointer Bi always grows with (0 1 L) orientations. Black-Right-Pointing-Pointer Epitaxial growth onto As terminated surfaces. Black-Right-Pointing-Pointer Proposed model based on structural and chemical considerations. - Abstract: We report on the growth of thin bismuth films on GaAs substrates with different orientations by means of electrochemical deposition. Atomic force microscopy reveals that the films are continuous and exhibit low roughness when they are grown under the appropriate overpotential. {omega}-2{theta} X-ray diffraction scans only show reflections that can be indexed as (0 1 L), meaning that Bi grows onto GaAs only in combinations of the (0 0 1) and (0 1 0) orientations. The matching between the GaAs substrate and the Bi layer has been studied by asymmetric X-ray scans, finding that Bi grows epitaxially on GaAs(1 1 0) and GaAs(1 1 1)B, both As-terminated surfaces. We explain these results by structural and chemical considerations.

  14. Disruption of Higher Order DNA Structures in Friedreich's Ataxia (GAA)(n) Repeats by PNA or LNA Targeting

    DEFF Research Database (Denmark)

    Bergquist, Helen; Rocha, Cristina S. J.; Alvarez-Asencio, Ruben

    2016-01-01

    Expansion of (GAA)n repeats in the first intron of the Frataxin gene is associated with reduced mRNA and protein levels and the development of Friedreich’s ataxia. (GAA)n expansions form non-canonical structures, including intramolecular triplex (H-DNA), and R-loops and are associated with epigen...

  15. Technology of surface wastewater purification, including high-rise construction areas

    Science.gov (United States)

    Tsyba, Anna; Skolubovich, Yury

    2018-03-01

    Despite on the improvements in the quality of high-rise construction areas and industrial wastewater treatment, the pollution of water bodies continues to increase. This is due to the organized and unorganized surface untreated sewage entry into the reservoirs. The qualitative analysis of some cities' surface sewage composition is carried out in the work. Based on the published literature review, the characteristic contamination present in surface wastewater was identified. The paper proposes a new technology for the treatment of surface sewage and presents the results of preliminary studies.

  16. Electron density in reasonably real metallic surfaces, including interchange and correlation effects

    International Nuclear Information System (INIS)

    Moraga, L.A.; Martinez, G.

    1981-01-01

    By means of a new method, the electron density in a jellium surface is calculated taking in account interchange and correlation effects; reproducing, in this way, the Lang and Kohn results. The new method is self-consistent but not iterative and hence is possible extend it to the solution of the same problem in more reasonably real metallic surfaces. (L.C.) [pt

  17. Testing a GaAs cathode in SRF gun

    International Nuclear Information System (INIS)

    Wang, E.; Kewisch, J.; Ben-Zvi, I.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

    2011-01-01

    RF electron guns with a strained superlattice GaAs cathode are expected to generate polarized electron beams of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface and lower cathode temperature. We plan to install a bulk GaAs:Cs in a SRF gun to evaluate the performance of both the gun and the cathode in this environment. The status of this project is: In our 1.3 GHz 1/2 cell SRF gun, the vacuum can be maintained at nearly 10 -12 Torr because of cryo-pumping at 2K. With conventional activation of bulk GaAs, we obtained a QE of 10% at 532 nm, with lifetime of more than 3 days in the preparation chamber and have shown that it can survive in transport from the preparation chamber to the gun. The beam line has been assembled and we are exploring the best conditions for baking the cathode under vacuum. We report here the progress of our test of the GaAs cathode in the SRF gun. Future particle accelerators, such as eRHIC and the ILC require high-brightness, high-current polarized electrons. Strained superlattice GaAs:Cs has been shown to be an efficient cathode for producing polarized electrons. Activation of GaAs with Cs,O(F) lowers the electron affinity and makes it energetically possible for all the electrons, excited into the conduction band that drift or diffuse to the emission surface, to escape into the vacuum. Presently, all operating polarized electron sources, such as the CEBAF, are DC guns. In these devices, the excellent ultra-high vacuum extends the lifetime of the cathode. However, the low field gradient on the photocathode's emission surface of the DC guns limits the beam quality. The higher accelerating gradients, possible in the RF guns, generate a far better beam. Until recently, most RF guns operated at room temperature, limiting the vacuum to ∼10 -9 Torr. This destroys the GaAs's NEA surface. The SRF guns combine the excellent vacuum conditions of DC guns and the high accelerating

  18. Microwave effective surface impedance of structures including a high-Tc superconducting film

    International Nuclear Information System (INIS)

    Hartemann, P.

    1992-01-01

    The microwave effective surface impedances of different stacks made of high-temperature superconducting films, dielectric materials and bulk normal metals were computed. The calculations were based on the two-fluid model of superconductors and the conventional transmission line theory. These effective impedances are compared to the calculated intrinsic surface impedances of the stacked superconducting films. The considered superconducting material has been the oxide YBa 2 Cu 3 O 7 epitaxially grown on crystalline substrates (MgO, LaAlO 3 , SrTiO 3 ), the film thickness ranging from a few nm to 1μm. Discrepancies between the effective surface resistances or reactances and the corresponding intrinsic values were determined at 10 GHz for non resonant or resonant structures. At resonance the surface resistance discrepancy exhibits a sharp peak which reaches 10 4 or more in relative value according to the geometry and the used materials. Obviously the effective surface reactance shows also huge variations about the resonance and may be negative. Moreover geometries allowing to obtain an effective resistance smaller than the film intrinsic value have been found. The effects of the resonance phenomenon on the electromagnetic wave reflectivity and reflection phase shift are investigated. Therefore the reported theoretical results demonstrate that the effective surface impedance of YBCO films with a thickness smaller than 500 nm can be very different from the intrinsic film impedance according to the structures. (Author). 3 refs., 10 figs., 2 tabs

  19. Gallium arsenide (GaAs) (001) after sublimation of arsenic (As) thin-film cap, by XPS

    Energy Technology Data Exchange (ETDEWEB)

    Engelhard, Mark H.; Lyubinetsky, Andre; Baer, Don R.

    2016-12-01

    Survey and high energy resolution spectra are reported for MBE grown GaAs (001) that had been capped with As. The As cap was removed by heating in situ prior to analysis. The current data expands upon the spectral regions previously reported in Surface Science Spectra. High energy resolution spectral features reported include: 2p, 3s, 3p, 3d, and L3M45M45 peaks for As; 2p, 3s, 3p, 3d, and L3M45M45 peaks for Ga; and the valance band region.

  20. Simultaneous measurements of work function and H‒ density including caesiation of a converter surface

    Science.gov (United States)

    Cristofaro, S.; Friedl, R.; Fantz, U.

    2017-08-01

    Negative hydrogen ion sources rely on the surface conversion of neutral atomic hydrogen and positive hydrogen ions to H-. The efficiency of this process depends on the actual work function of the converter surface. By introducing caesium into the source the work function decreases, enhancing the negative ion yield. In order to study the impact of the work function on the H- surface production at similar conditions to the ones in ion sources for fusion devices like ITER and DEMO, fundamental investigations are performed in a flexible laboratory experiment. The work function of the converter surface can be absolutely measured by photoelectric effect, while a newly installed cavity ring-down spectroscopy system (CRDS) measures the H- density. The CRDS is firstly tested and characterized by investigations on H- volume production. Caesiation of a stainless steel sample is then performed in vacuum and the plasma effect on the Cs layer is investigated also for long plasma-on times. A minimum work function of (1.9±0.1) eV is reached after some minutes of plasma treatment, resulting in a reduction by a value of 0.8 eV compared to vacuum measurements. The H- density above the surface is (2.1±0.5)×1015 m-3. With further plasma exposure of the caesiated surface, the work function increases up to 3.75 eV, due to the impinging plasma particles which gradually remove the Cs layer. As a result, the H- density decreases by a factor of at least 2.

  1. Comparative research on the transmission-mode GaAs photocathodes of exponential-doping structures

    International Nuclear Information System (INIS)

    Chen Liang; Qian Yun-Sheng; Zhang Yi-Jun; Chang Ben-Kang

    2012-01-01

    Early research has shown that the varied doping structures of the active layer of GaAs photocathodes have been proven to have a higher quantum efficiency than uniform doping structures. On the basis of our early research on the surface photovoltage of GaAs photocathodes, and comparative research before and after activation of reflection-mode GaAs photocathodes, we further the comparative research on transmission-mode GaAs photocathodes. An exponential doping structure is the typical varied doping structure that can form a uniform electric field in the active layer. By solving the one-dimensional diffusion equation for no equilibrium minority carriers of transmission-mode GaAs photocathodes of the exponential doping structure, we can obtain the equations for the surface photovoltage (SPV) curve before activation and the spectral response curve (SRC) after activation. Through experiments and fitting calculations for the designed material, the body-material parameters can be well fitted by the SPV before activation, and proven by the fitting calculation for SRC after activation. Through the comparative research before and after activation, the average surface escape probability (SEP) can also be well fitted. This comparative research method can measure the body parameters and the value of SEP for the transmission-mode GaAs photocathode more exactly than the early method, which only measures the body parameters by SRC after activation. It can also help us to deeply study and exactly measure the parameters of the varied doping structures for transmission-mode GaAs photocathodes, and optimize the Cs-O activation technique in the future. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

  2. Surface wave site characterization at 27 locations near Boston, Massachusetts, including 2 strong-motion stations

    Science.gov (United States)

    Thompson, Eric M.; Carkin, Bradley A.; Baise, Laurie G.; Kayen, Robert E.

    2014-01-01

    The geotechnical properties of the soils in and around Boston, Massachusetts, have been extensively studied. This is partly due to the importance of the Boston Blue Clay and the extent of landfill in the Boston area. Although New England is not a region that is typically associated with seismic hazards, there have been several historical earthquakes that have caused significant ground shaking (for example, see Street and Lacroix, 1979; Ebel, 1996; Ebel, 2006). The possibility of strong ground shaking, along with heightened vulnerability from unreinforced masonry buildings, motivates further investigation of seismic hazards throughout New England. Important studies that are pertinent to seismic hazards in New England include source-parameter studies (Somerville and others, 1987; Boore and others, 2010), wave-propagation studies (Frankel, 1991; Viegas and others, 2010), empirical ground-motion prediction equations (GMPE) for computing ground-motion intensity (Tavakoli and Pezeshk, 2005; Atkinson and Boore, 2006), site-response studies (Hayles and others, 2001; Ebel and Kim, 2006), and liquefaction studies (Brankman and Baise, 2008). The shear-wave velocity (VS) profiles collected for this report are pertinent to the GMPE, site response, and liquefaction aspects of seismic hazards in the greater Boston area. Besides the application of these data for the Boston region, the data may be applicable throughout New England, through correlations with geologic units (similar to Ebel and Kim, 2006) or correlations with topographic slope (Wald and Allen, 2007), because few VS measurements are available in stable tectonic regions.Ebel and Hart (2001) used felt earthquake reports to infer amplification patterns throughout the greater Boston region and noted spatial correspondence with the dominant period and amplification factors obtained from ambient noise (horizontal-to-vertical ratios) by Kummer (1998). Britton (2003) compiled geotechnical borings in the area and produced a

  3. Oxide effects on photoemission from high current GaAs photocathodes

    International Nuclear Information System (INIS)

    Garwin, E.L.; Kirby, R.E.; Sinclair, C.K.; Roder, A.

    1981-03-01

    During four years of on line operation of the SLAC polarized electron gun (PEGGY) and polarized LEED (PLEED) system, we have observed and characterized the failure modes of the GaAs (100) photocathodes (PC's) used in these systems. Several modes are observed. Gradual decreases in electron polarization and intensity are attributed to the physisorption of CO 2 on the PC's during running at LN 2 temperatures. Such PC's can be rejuvenated by warming to 90K, i.e., above the CO 2 desorption temperature. These PC's recover 90% of their original intensity. A second well-characterized failure mode results from overheating the PC during in-situ heat cleaning prior to activation. In this mode, As is preferentially evaporated from the GaAs, leaving a Ga 2 O 3 layer on the surface. This effect has been studied by AES sputter profiling which indicates that the substantial thickness of the oxide layer blocks photoemission. These PC's may only be recovered by chemically removing the oxide layer. A third mode which is not as well characterized appears for thin Ga oxide layers. Properties of these PC's include reduced emission and the presence of a cutoff bias level. Such PC's are also not recoverable in-situ

  4. Determining surface wave attenuation by modeling surface wave amplitudes including finite-frequency focusing and defocusing effects

    Science.gov (United States)

    Ma, Z.; Masters, G.

    2011-12-01

    We have developed a technique that uses cluster analysis method to efficiently measure Rayleigh wave phase and amplitude anomalies. Amplitude anomaly measurements have been made on the vertical components of all permanent stations recording LHZ data from IRIS. We currently consider earthquakes with Ms>5.5 between 1990 and 2004 and correct for source phase and magnitude according to the CMT. This technique leads to a large set of amplitude measurements at 7mHz, 10mHz, 15mHz and 20mHz. We discard data with erroneously large amplitude anomalies (|dlnA|>1) and inconsistent instrument responses and we only use earthquakes recorded by more than 30 stations. Out of about 250000 raw measurements for each frequency, about 140000 measurements are retained for inverting for attenuation structure. Similar to Dalton and Ekstrom (2006), phase and amplitude data are inverted together for phase velocity maps, attenuation maps, and source and receiver terms. However, we use the 2D finite frequency amplitude kernel of Zhou et al, (2004) to model the focusing-defocusing effects. Ray theory, which has been used to date, gives amplitude anomaly predictions which depend strongly on short wavelength structure and so are very sensitive to how phase velocity maps are smoothed. Our resulting attenuation maps show structures correlating well with surface tectonics, with high attenuation in regions of ridges, back-arc basins and western North America, and low attenuation in stable continental shields. The success of getting reasonable attenuation structures demonstrates the feasibility of applying 2D finite frequency amplitude kernel to real data.

  5. Direct Growth of High-Quality InP Layers on GaAs Substrates by MOCVD

    Directory of Open Access Journals (Sweden)

    K. F. Yarn

    2003-01-01

    group V partial pressure, growth rate and V/III ratios. A mirror-like, uniform surface and high crystal quality of the metamorphic buffer layer directly grown on a GaAs substrate can be achieved. Finally, to investigate the performance of the metamorphic microwave devices, we also fabricate the InAlAs/InGaAs metamorphic HEMT on GaAs substrates.

  6. Defects and diffusion in Si+ implanted GaAs

    International Nuclear Information System (INIS)

    Jones, K.S.; Robinson, H.G.; Deal, M.D.; Lee, C.C.; Allen, E.L.

    1993-05-01

    The effect of extended defects on the diffusion of ion implanted species is an area of concern in the development of process simulators for GaAs. This study explores the effect of type 1 extended defects including voids and dislocation loops on the diffusion of Si implanted into GaAs. Semi-insulating GaAs wafers were implanted with 1 x 10 14 /cm 2 Si + at implant temperatures between -51 C and 80 C and at energies ranging from 20 keV to 200 keV. SIMS results show that the diffusivity of Si decreases with both increasing implant temperature and increasing implant energy. At the same time extrinsic dislocation loop concentrations also increased. For the implant conditions studied, no voids were observed. The diffusion results can only be reconciled with the TEM results if the dislocation loops are behaving in a reactive rather than proactive manner. In other words, the changes in vacancy concentration that are affecting the diffusivity are also affecting the loop concentration. This model is supported by evidence that Si diffusivity is enhanced over the same time interval the dislocation loops are dissolving which is consistent with the loops having a reactive role. It remains unclear whether the existence of loops significantly affects the total concentration of vacancies and thus diffusion by acting as a competing sink

  7. X-ray diffraction from single GaAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Biermanns, Andreas

    2012-11-12

    In recent years, developments in X-ray focussing optics have allowed to produce highly intense, coherent X-ray beams with spot sizes in the range of 100 nm and below. Together with the development of new experimental stations, X-ray diffraction techniques can now be applied to study single nanometer-sized objects. In the present work, X-ray diffraction is applied to study different aspects of the epitaxial growth of GaAs nanowires. Besides conventional diffraction methods, which employ X-ray beams with dimensions of several tens of {mu}m, special emphasis lies on the use of nanodiffraction methods which allow to study single nanowires in their as-grown state without further preparation. In particular, coherent X-ray diffraction is applied to measure simultaneously the 3-dimensional shape and lattice parameters of GaAs nanowires grown by metal-organic vapor phase epitaxy. It is observed that due to a high density of zinc-blende rotational twins within the nanowires, their lattice parameter deviates systematically from the bulk zinc-blende phase. In a second step, the initial stage in the growth of GaAs nanowires on Si (1 1 1) surfaces is studied. This nanowires, obtained by Ga-assisted growth in molecular beam epitaxy, grow predominantly in the cubic zinc-blende structure, but contain inclusions of the hexagonal wurtzite phase close to their bottom interface. Using nanodiffraction methods, the position of the different structural units along the growth axis is determined. Because the GaAs lattice is 4% larger than silicon, these nanowires release their lattice mismatch by the inclusion of dislocations at the interface. Whereas NWs with diameters below 50 nm are free of strain, a rough interface structure in nanowires with diameters above 100 nm prevents a complete plastic relaxation, leading to a residual strain at the interface that decays elastically along the growth direction. Finally, measurements on GaAs-core/InAs-shell nanowire heterostructures are presented

  8. Expansion Hamiltonian model for a diatomic molecule adsorbed on a surface: Vibrational states of the CO/Cu(100) system including surface vibrations

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Qingyong, E-mail: mengqingyong@dicp.ac.cn [State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Zhongshan Road 457, 116023 Dalian (China); Meyer, Hans-Dieter, E-mail: hans-dieter.meyer@pci.uni-heidelberg.de [Theoretische Chemie, Physikalisch-Chemisches Institut, Ruprecht-Karls Universität Heidelberg, Im Neuenheimer Feld 229, D-69120 Heidelberg (Germany)

    2015-10-28

    Molecular-surface studies are often done by assuming a corrugated, static (i.e., rigid) surface. To be able to investigate the effects that vibrations of surface atoms may have on spectra and cross sections, an expansion Hamiltonian model is proposed on the basis of the recently reported [R. Marquardt et al., J. Chem. Phys. 132, 074108 (2010)] SAP potential energy surface (PES), which was built for the CO/Cu(100) system with a rigid surface. In contrast to other molecule-surface coupling models, such as the modified surface oscillator model, the coupling between the adsorbed molecule and the surface atoms is already included in the present expansion SAP-PES model, in which a Taylor expansion around the equilibrium positions of the surface atoms is performed. To test the quality of the Taylor expansion, a direct model, that is avoiding the expansion, is also studied. The latter, however, requests that there is only one movable surface atom included. On the basis of the present expansion and direct models, the effects of a moving top copper atom (the one to which CO is bound) on the energy levels of a bound CO/Cu(100) system are studied. For this purpose, the multiconfiguration time-dependent Hartree calculations are carried out to obtain the vibrational fundamentals and overtones of the CO/Cu(100) system including a movable top copper atom. In order to interpret the results, a simple model consisting of two coupled harmonic oscillators is introduced. From these calculations, the vibrational levels of the CO/Cu(100) system as function of the frequency of the top copper atom are discussed.

  9. Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Tchernycheva, M; Harmand, J C; Patriarche, G; Travers, L; Cirlin, G E

    2006-01-01

    Molecular beam epitaxial growth of GaAs nanowires using Au particles as a catalyst was investigated. Prior to the growth during annealing, Au alloyed with Ga coming from the GaAs substrate, and melted. Phase transitions of the resulting particles were observed in situ by reflection high-energy electron diffraction (RHEED). The temperature domain in which GaAs nanowire growth is possible was determined. The lower limit of this domain (320 deg. C) is close to the observed catalyst solidification temperature. Below this temperature, the catalyst is buried by GaAs growth. Above the higher limit (620 deg. C), the catalyst segregates on the surface with no significant nanowire formation. Inside this domain, the influence of growth temperature on the nanowire morphology and crystalline structure was investigated in detail by scanning electron microscopy and transmission electron microscopy. The correlation of the nanowire morphology with the RHEED patterns observed during the growth was established. Wurtzite GaAs was found to be the dominant crystal structure of the wires

  10. Comparison of the photoemission behaviour between negative electron affinity GaAs and GaN photocathodes

    International Nuclear Information System (INIS)

    Zhang Yi-Jun; Zou Ji-Jun; Wang Xiao-Hui; Chang Ben-Kang; Qian Yun-Sheng; Zhang Jun-Ju; Gao Pin

    2011-01-01

    In view of the important application of GaAs and GaN photocathodes in electron sources, differences in photoemission behaviour, namely the activation process and quantum yield decay, between the two typical types of III—V compound photocathodes have been investigated using a multi-information measurement system. The activation experiment shows that a surface negative electron affinity state for the GaAs photocathode can be achieved by the necessary Cs—O two-step activation and by Cs activation alone for the GaN photocathode. In addition, a quantum yield decay experiment shows that the GaN photocathode exhibits better stability and a longer lifetime in a demountable vacuum system than the GaAs photocathode. The results mean that GaN photocathodes are more promising candidates for electron source emitter use in comparison with GaAs photocathodes. (interdisciplinary physics and related areas of science and technology)

  11. Influence of implantation conditions of He+ ions on the structure of a damaged layer in GaAs(001)

    International Nuclear Information System (INIS)

    Shcherbachev, Kirill; Bailey, Melanie J.

    2011-01-01

    An investigation into the influence of implantation conditions (dose, energy, and target temperature) of He + ions on the damage structure of GaAs (100) substrates was performed by HRXRD, scanning electron microscopy, and Nomarski microscopy. Blistering is shown to become apparent as characteristic features of isolines in RSMs. We propose that the formation of the defects yielding a characteristic XRDS is defined by the behavior of implanted atoms in the GaAs matrix, depending on two competing processes: (1) formation of the gas-filled bubbles; (2) diffusion of the He atoms from the bubbles toward the surface and deep into the GaAs substrate. We conclude that the gas-filled bubbles change the structure of the irradiated layer, resulting in the formation of strained crystalline areas of the GaAs matrix. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Some Aspects of the RHEED Behavior of Low-Temperature GaAs Growth

    International Nuclear Information System (INIS)

    Nemcsics, A.

    2005-01-01

    The reflection high-energy electron diffraction (RHEED) behavior manifested during MBE growth on a GaAs(001) surface under low-temperature (LT) growth conditions is examined in this study. RHEED and its intensity oscillations during LT GaAs growth exhibit some particular behavior. The intensity, phase, and decay of the oscillations depend on the beam equivalent pressure (BEP) ratio and substrate temperature, etc. Here, the intensity dependence of RHEED behavior on the BEP ratio, substrate temperature, and excess of As content in the layer are examined. The change in the decay constant of the RHEED oscillations is also discussed

  13. Polarity influence on the indentation punching of thin {111} GaAs foils at elevated temperatures

    International Nuclear Information System (INIS)

    Patriarche, G; Largeau, L; Riviere, J P; Bourhis, E Le

    2005-01-01

    Thin {111} GaAs substrates were deformed by a Vickers indenter at 350 deg. C-370 deg. C under loads ranging between 0.4 and 1.9 N. Optical microscopy and interferometry were used to observe the indented and opposite faces of the thin foils and hence to investigate the plastic flow through the samples. Attention was paid to the polarity (A or B) of the specimen surface, as GaAs is known to show a large difference between α and β dislocations mobilities. A model considering the influence of polarity is proposed to describe the material flow throughout thin samples

  14. Optimization of the GaAs et GaAs/Si annealing using halogen lamp flashes

    International Nuclear Information System (INIS)

    Blanck, H.

    1989-01-01

    The aim of the work is to check whether the flash annealing of GaAs and GaAs/Si, using halogen lamps, allows an improvement in the results obtained by usual methods. The electrical activation, defects behavior and results uniformity are studied. The results on the activation and diffusion of implanted impurities are shown to be equivalent to those obtained with classical annealing methods. However, residual impurities (or defects) diffusion phenomena are restrained by the flash annealing technique. The Hall effect cartographic measurements showed an improvement of the uniformity of the implanted coating surface resistance. Flash annealing is a suitable method for the Si activation in GaAs. It allows an improvement of the GaAs results obtained with standard techniques, as well as the formation, by means of ion implantation, of active zones in the GaAs/Si layers [fr

  15. Influence of substrate orientation on the structural properties of GaAs nanowires in MOCVD

    International Nuclear Information System (INIS)

    Muhammad, R.; Othaman, Z.; Ibrahim, Z.; Sakrani, S.; Wahab, Y.

    2016-01-01

    In this study, the effect of substrate orientation on the structural properties of GaAs nanowires grown by a metal organic chemical vapor deposition has been investigated. Gold colloids were used as catalyst to initiate the growth of nanowiresby the vapour-liquid-solid (VLS) mechanism. From the field-emission scanning electron microscopy (FE-SEM), the growth of the nanowires were at an elevation angle of 90°, 60°, 65° and 35° with respect to the GaAs substrate for (111)B, (311)B, (110) and (100) orientations respectively. The preferential NW growth direction is always <111>B. High-resolution transmission electron microscope (HRTEM) micrograph showed the NWs that grew on the GaAs(111)B has more structural defects when compared to others. Energy dispersive X-ray analysis (EDX) indicated the presence of Au, Ga and As. The bigger diameter NWs dominates the (111)B substrate surface.

  16. Influence of substrate orientation on the structural properties of GaAs nanowires in MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Muhammad, R., E-mail: rosnita@utm.my; Othaman, Z., E-mail: zulothaman@gmail.com; Ibrahim, Z., E-mail: zuhairi@utm.my; Sakrani, S., E-mail: samsudi3@yahoo.com [Faculty of Science, UniversitiTeknologi Malaysia, 81310 UTM, Johor (Malaysia); Wahab, Y., E-mail: wyussof@gmail.com [Razak School, UniversitiTeknologi Malaysia, 54100 Kuala Lumpur (Malaysia)

    2016-04-19

    In this study, the effect of substrate orientation on the structural properties of GaAs nanowires grown by a metal organic chemical vapor deposition has been investigated. Gold colloids were used as catalyst to initiate the growth of nanowiresby the vapour-liquid-solid (VLS) mechanism. From the field-emission scanning electron microscopy (FE-SEM), the growth of the nanowires were at an elevation angle of 90°, 60°, 65° and 35° with respect to the GaAs substrate for (111)B, (311)B, (110) and (100) orientations respectively. The preferential NW growth direction is always <111>B. High-resolution transmission electron microscope (HRTEM) micrograph showed the NWs that grew on the GaAs(111)B has more structural defects when compared to others. Energy dispersive X-ray analysis (EDX) indicated the presence of Au, Ga and As. The bigger diameter NWs dominates the (111)B substrate surface.

  17. Andreev reflections at interfaces between delta-doped GaAs and superconducting Al films

    DEFF Research Database (Denmark)

    Taboryski, Rafael Jozef; Clausen, Thomas; Hansen, Jørn Bindslev

    1996-01-01

    By placing several Si delta-doped layers close to the surface of a GaAs molecular beam epitaxy-grown crystal, we achieve a compensation of the Schottky barrier and obtain a good Ohmic contact between an in situ deposited (without breaking the vacuum) Al metallization layer and a highly modulation...

  18. Role of wave functions in electromagnetism : RAS from GaAs (110)

    NARCIS (Netherlands)

    Wijers, C.M.J.; de Boeij, P.L.

    2001-01-01

    We have calculated the reflectance anisotropy for the GaAs (110) surface using the discrete cellular method. This method extends the range of application of standard discrete dipole calculations by incorporating nonlocal polarizabilitites. The method adds a second quantum mechanical channel of

  19. Molecular beam epitaxial growth and characterization of GaSb layers on GaAs (0 0 1) substrates

    International Nuclear Information System (INIS)

    Li Yanbo; Zhang Yang; Zhang Yuwei; Wang Baoqiang; Zhu Zhanping; Zeng Yiping

    2012-01-01

    We report on the growth of GaSb layers on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE). We investigate the influence of the GaAs substrate surface treatment, growth temperature, and V/III flux ratios on the crystal quality and the surface morphology of GaSb epilayers. Comparing to Ga-rich GaAs surface preparation, the Sb-rich GaAs surface preparation can promote the growth of higher-quality GaSb material. It is found that the crystal quality, electrical properties, and surface morphology of the GaSb epilayers are highly dependent on the growth temperature, and Sb/Ga flux ratios. Under the optimized growth conditions, we demonstrate the epitaxial growth of high quality GaSb layers on GaAs substrates. The p-type nature of the unintentionally doped GaSb is studied and from the growth conditions dependence of the hole concentrations of the GaSb, we deduce that the main native acceptor in the GaSb is the Ga antisite (Ga Sb ) defect.

  20. Twins and strain relaxation in zinc-blende GaAs nanowires grown on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Piñero, J.C., E-mail: josecarlos.pinero@uca.es [Dpto. Ciencias de los Materiales, Universidad de Cádiz, 11510, Puerto Real, Cádiz (Spain); Araújo, D.; Pastore, C.E.; Gutierrez, M. [Dpto. Ciencias de los Materiales, Universidad de Cádiz, 11510, Puerto Real, Cádiz (Spain); Frigeri, C. [Istituto CNR-IMEM Parco Area delle Scienze 37/A, Fontanini, 43010, Parma (Italy); Benali, A.; Lelièvre, J.F.; Gendry, M. [INL-Institut des Nanotechnologies de Lyon, UMR 5270 Ecole Centrale de Lyon 36, Avenue Guy de Collongue, 69134, Ecully Cedex (France)

    2017-02-15

    Highlights: • A TEM-HREM study of GaAs nanowires, growth over Si, is presented. • Misfit dislocations are detected in the Si/GaAs magma interface. • The study demonstrates strain relaxation through twin formation in some nanowires. - Abstract: To integrate materials with large lattice mismatch as GaAs on silicon (Si) substrate, one possible approach, to improve the GaAs crystalline quality, is to use nanowires (NWs) technology. In the present contribution, NWs are grown on <111> oriented Si substrates by molecular beam epitaxy (MBE) using vapor-liquid-solid (VLS) method. Transmission electron microscopy (TEM) analyses show that NWs are mainly grown alternating wurtzite and zinc blend (ZB) phases, and only few are purely ZB. On the latter, High Resolution Electron Microscopy (HREM) evidences the presence of twins near the surface of the NW showing limited concordance with the calculations of Yuan (2013) [1], where {111} twin planes in a <111>-oriented GaAs NW attain attractive interactions mediated by surface strain. In addition, such twins allow slight strain relaxation and are probably induced by the local huge elastic strain observed by HREM in the lattice between the twin and the surface. The latter is attributed to some slight bending of the NW as shown by the inversion of the strain from one side to the other side of the NW.

  1. Wet-etched phononic crystal waveguiding on GaAs

    Science.gov (United States)

    Muzar, Edward; Azodi Aval, Golnaz; Stotz, James A. H.

    2018-01-01

    A wet-etched phononic crystal waveguide in GaAs with approximately two micron deep inclusions is studied both numerically and experimentally for controlled surface acoustic wave propagation. Numerically, the phononic crystal was modelled using the finite element method (FEM) with COMSOL Multiphysics, and the surface displacement of the acoustic waves was measured using optical interferometry. The computed filter response of the phononic crystal confirmed that the phononic crystal was an effective stop band filter in the interval of 400 MHz and 450 MHz. An L1 linear defect waveguide with a stepped funnel entrance design is shown to perform well at a surface acoustic wave frequency of 410.344 MHz and in agreement to simulated results. The phononic crystal waveguide system shows promise for use in acoustic control of GaAs-based quantum nanostructures.

  2. Optimization of selective area growth of GaAs by low pressure organometallic vapor phase epitaxy for monolithic integrated circuits

    Science.gov (United States)

    Kanber, H.; Bar, S. X.; Norris, P. E.; Beckham, C.; Pacer, M.

    1994-02-01

    GaAs MESFET device structures have been grown on silicon nitride or silicon dioxide masked 50 and 76 mm GaAs substrates by low pressure organometallic vapor phase epitaxy. Very smooth, featureless morphology and 100 percent selectivity of GaAs islands have been achieved over a range of growth conditions. Optimization of the GaAs p-buffer of the field effect transistor structure has led to improved device performance, including increased breakdown voltage. Device characteristics of the 0.5 μm gate low noise metal semiconductor field-effect transistors fabricated on these islands show good performance and wafer to wafer reproducibility on the second device lot.

  3. A GaAs DETECTOR FOR DARK MATTER AND SOLAR NEUTRINO RESEARCH

    Energy Technology Data Exchange (ETDEWEB)

    T. BOWLES; ET AL

    2000-08-01

    The ability to produce large GaAs crystals with the requisite electronic properties to be fabricated into charged particle and photon detectors would provide a detector medium that would find numerous applications in both applied and fundamental research. Various applications would likely include x-ray detectors on satellites, environmental monitoring, medical imaging, bore hole mining spectroscopy, searches for dark matter, and solar neutrino research. We have carried out the development of GaAs detectors using two commercial crystal growing techniques. We have shown it should be able to grow detectors with 20 cm{sup 2} area and a depletion depth of 1 mm. Detectors of this size would find immediate applications in high-resolution, room temperature, low energy gamma ray measurements. We have also arrived at an understanding of the limitations of the common techniques used to grow GaAs and have determined that it should be possible to produce larger detectors using proprietary methods.

  4. Mechanism analysis of Gen Ⅲ LLL image intensifier GaAs cathode photoelectric emission disability

    Science.gov (United States)

    Xu, Jiangtao; Yan, Lei; Cheng, Yaojin; Han, Kunye; Liu, Beibei; Zhang, Taimin

    2013-08-01

    The focus of the third generation image intensifier photocathode sensitivity decreases in the GaAs are analyzed, and proposed solutions,experimental results show that the tube microchannel plate(mcp), screen GaAs cathode discharge gas is caused by decreased sensitivity of the main reasons. Paper used two-layer model, and even negative electron affinity(NET) interface barrier theory of the photoelectric cathode drop mechanism was discussed , when the photocathode emission levels of CO adsorption and other harmful gas, chemical adsorption layer of ionic bond formation will lead to production of cathode surface barrier interfaces. Cathode surface adsorption of the pollutants more ,the interface barrier becomes thicker, the smaller the electron surface escape probability, when the cathode interface thicker barrier to the electron surface escape is zero, the cathode photoemission end of life.

  5. Effects of dry etching on GaAs

    International Nuclear Information System (INIS)

    Pang, S.W.; Lincoln, G.A.; McClelland, R.W.; DeGraff, P.D.; Geis, M.W.; Piacentini, W.J.

    1983-01-01

    A number of dry etching techniques have been developed and their ability to produce anisotropic etch profiles has been demonstrated. In addition to etch anisotropy, an important consideration for device and circuit fabrication is whether a sample suffers radiation damage by exposure to ions, electrons, or ultraviolet light during etching. In this study we evaluate the degree of radiation damage induced in GaAs by ion-beam etching with Ar, reactive-ion etching with CF 4 and CHF 3 , and ion-beam-assisted etching with Ar and Cl 2 . In addition, we propose and demonstrate processing techniques which can be used after dry etching to reduce the effects of radiation damage. GaAs samples were etched under a variety of etching conditions. The degree of radiation damage caused by etching was determined by evaluating Schottky diodes fabricated on the etched surfaces and by using deep level transient spectroscopy to characterize trapping centers. It was found that the barrier heights and breakdown voltages of Schottky diodes were changed after etching. Also, an increase in the density of traps was observed. Variations in the etching conditions had a strong effect on the measured characteristics of the samples

  6. Inductively coupled plasma etching of GaAs in Cl2/Ar, Cl2/Ar/O2 chemistries with photoresist mask

    Science.gov (United States)

    Liu, Kai; Ren, Xiao-min; Huang, Yong-qing; Cai, Shi-wei; Duan, Xiao-feng; Wang, Qi; Kang, Chao; Li, Jun-shuai; Chen, Qing-tao; Fei, Jia-rui

    2015-11-01

    In this paper, we proposed our recent works on inductively coupled plasma (ICP) etching of GaAs in Cl2/Ar and Cl2/Ar/O2 chemistry for pattern structure transferring and analyzed their etching mechanism. It is proposed that the etching rate reduction due to introduction of extra Cl2 and additional O2 in the plasma chemistry is resulted from their influences on all ICP etching process aspects. Moreover, with results presented here, it shows that by introducing O2 into plasma chemistry, the etched GaAs surface roughness will be optimized and the etching ratio of photoresist to GaAs will be tuned.

  7. Molecular Beam Epitaxial Growth of GaAs on (631) Oriented Substrates

    International Nuclear Information System (INIS)

    Cruz Hernandez, Esteban; Rojas Ramirez, Juan-Salvador; Contreras Hernandez, Rocio; Lopez Lopez, Maximo; Pulzara Mora, Alvaro; Mendez Garcia, Victor H.

    2007-01-01

    In this work, we report the study of the homoepitaxial growth of GaAs on (631) oriented substrates by molecular beam epitaxy (MBE). We observed the spontaneous formation of a high density of large scale features on the surface. The hilly like features are elongated towards the [-5, 9, 3] direction. We show the dependence of these structures with the growth conditions and we present the possibility of to create quantum wires structures on this surface

  8. Valence band photoemission from in-situ grown GaAs(100)-c(4 x 4)

    Czech Academy of Sciences Publication Activity Database

    Jiříček, Petr; Cukr, Miroslav; Bartoš, Igor; Adell, M.; Strasser, T.; Schattke, W.

    2006-01-01

    Roč. 56, č. 1 (2006), s. 21-26 ISSN 0011-4626. [Symposium on Surface Physics /10./. Praha, 11.07.2005-15.07.2005] R&D Projects: GA ČR(CZ) GA202/04/0994 Institutional research plan: CEZ:AV0Z10100521 Keywords : GaAs(100)-c(4X4) * surface states * band structure * structure plot Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.568, year: 2006

  9. Energetics and Dynamics of GaAs Epitaxial Growth via Quantum Wave Packet Studies

    Science.gov (United States)

    Dzegilenko, Fedor N.; Saini, Subhash (Technical Monitor)

    1998-01-01

    The dynamics of As(sub 2) molecule incorporation into the flat Ga-terminated GaAs(100) surface is studied computationally. The time-dependent Schrodinger equation is solved on a two-dimensional potential energy surface obtained using density functional theory calculations. The probabilities of trapping and subsequent dissociation of the molecular As(sub 2) bond are calculated as a function of beam translational energy and vibrational quantum number of As(sub 2).

  10. 1 GHz GaAs Buck Converter for High Power Amplifier Modulation Applications

    NARCIS (Netherlands)

    Busking, E.B.; Hek, A.P. de; Vliet, F.E. van

    2012-01-01

    A fully integrated 1 GHz buck converter output stage, including on-chip inductor and DC output filtering has been realized, in a standard high-voltage breakdown GaAs MMIC technology. This is a significant step forward in designing highspeed power control of supply-modulated HPAs (high power

  11. Measurement and model of the infrared two-photon emission spectrum of GaAs.

    Science.gov (United States)

    Hayat, Alex; Ginzburg, Pavel; Orenstein, Meir

    2009-07-10

    Two-photon emission from semiconductors was recently observed, but not fully interpreted. We develop a dressed-state model incorporating intraband scattering-related level broadening, yielding nondivergent emission rates. The spectrum calculations for high carrier concentrations including the time dependence of the screening buildup correspond well to our measured two-photon emission spectrum from GaAs.

  12. Structural and electronic properties of isovalent boron atoms in GaAs

    Science.gov (United States)

    Krammel, C. M.; Nattermann, L.; Sterzer, E.; Volz, K.; Koenraad, P. M.

    2018-04-01

    Boron containing GaAs, which is grown by metal organic vapour phase epitaxy, is studied at the atomic level by cross-sectional scanning tunneling microscopy (X-STM) and spectroscopy (STS). In topographic X-STM images, three classes of B related features are identified, which are attributed to individual B atoms on substitutional Ga sites down to the second layer below the natural {110} cleavage planes. The X-STM contrast of B atoms below the surface reflects primarily the structural modification of the GaAs matrix by the small B atoms. However, B atoms in the cleavage plane have in contrast to conventional isovalent impurities, such as Al and In, a strong influence on the local electronic structure similar to donors or acceptors. STS measurements show that B in the GaAs {110} surfaces gives rise to a localized state short below the conduction band (CB) edge while in bulk GaAs, the B impurity state is resonant with the CB. The analysis of BxGa1-xAs/GaAs quantum wells reveals a good crystal quality and shows that the incorporation of B atoms in GaAs can be controlled along the [001] growth direction at the atomic level. Surprisingly, the formation of the first and fourth nearest neighbor B pairs, which are oriented along the directions, is strongly suppressed at a B concentration of 1% while the third nearest neighbor B pairs are found more than twice as often than expected for a completely spatially random pattern.

  13. Transmission electron microscopy and electrical properties measurements of laser doped silicon and GaAs

    International Nuclear Information System (INIS)

    Young, R.T.; Narayan, J.; Westbrook, R.D.; Wood, R.F.

    1978-12-01

    High quality silicon p-n junctions have been prepared by alloying a vacuum evaporated Al film into n-type Si and by epitaxial regrowth of an As doped Si amorphous layer onto p-type (100) Si by a single short pulse of ruby laser radiation. Transmission electron microscopy investigations indicated that a defect-free epitaxial layer was grown on the (100) Si surface; however, some polycrystalline structure in the very near-surface region was observed, which does not seem to affect the junction characteristics. Laser assisted junction formation in GaAs was demonstrated by alloying Mg films into n-type GaAs; however, diode characteristics show a large leakage current which may have been caused by the surface damage

  14. Catalyst-free selective-area epitaxy of GaAs nanowires by metal-organic chemical vapor deposition using triethylgallium

    Science.gov (United States)

    Kim, Hyunseok; Ren, Dingkun; Farrell, Alan C.; Huffaker, Diana L.

    2018-02-01

    We demonstrate catalyst-free growth of GaAs nanowires by selective-area metal-organic chemical vapor deposition (MOCVD) on GaAs and silicon substrates using a triethylgallium (TEGa) precursor. Two-temperature growth of GaAs nanowires—nucleation at low temperature followed by nanowire elongation at high temperature—almost completely suppresses the radial overgrowth of nanowires on GaAs substrates while exhibiting a vertical growth yield of almost 100%. A 100% growth yield is also achieved on silicon substrates by terminating Si(111) surfaces by arsenic prior to the nanowire growth and optimizing the growth temperature. Compared with trimethylgallium (TMGa) which has been exclusively employed in the vapor–solid phase growth of GaAs nanowires by MOCVD, the proposed growth technique using TEGa is advantageous because of lower growth temperature and fully suppressed radial overgrowth. It is also known that GaAs grown by TEGa induce less impurity incorporation compared with TMGa, and therefore the proposed method could be a building block for GaAs nanowire-based high-performance optoelectronic and nanoelectronic devices on both III–V and silicon platforms.

  15. The role of proximity caps during the annealing of UV-ozone oxidized GaAs

    Science.gov (United States)

    Ghosh, S. C.; Biesinger, M. C.; LaPierre, R. R.; Kruse, P.

    2007-06-01

    This study provides a deeper insight into the chemistry and physics of the common engineering practice of using a proximity cap, while annealing compound semiconductors such as GaAs. We have studied the cases of a GaAs proximity cap, a Si proximity cap, and no proximity cap. Using x-ray photoelectron spectroscopy, it has been found that annealing increases the gallium to arsenic ratio in the oxide layer in all cases. During the annealing of UV-ozone oxidized GaAs, it has been observed that GaAs proximity caps also serve as a sacrificial layer to accelerate the desorption of oxide species. In all cases surface deterioration due to pit formation has been observed, and the depth of pits is found to depend on the effective role played by the capping material. Energy dispersive x-ray analysis provides additional evidence that pits mainly consist of elemental As and gallium oxide, with most of the elemental As situated at the pit-substrate interface. Deposition of a thin layer of gold and subsequent annealing to 500°C for 300s under different capping conditions shows the use of a proximate cap to be practically insignificant in annealing Au deposited films.

  16. Energy Harvesting for GaAs Photovoltaics Under Low-Flux Indoor Lighting Conditions

    Science.gov (United States)

    Teran, Alan S.; Moon, Eunseong; Lim, Wootaek; Kim, Gyouho; Lee, Inhee; Blaauw, David; Phillips, Jamie D.

    2016-01-01

    GaAs photovoltaics are promising candidates for indoor energy harvesting to power small-scale (≈1 mm2) electronics. This application has stringent requirements on dark current, recombination, and shunt leakage paths due to low-light conditions and small device dimensions. The power conversion efficiency and the limiting mechanisms in GaAs photovoltaic cells under indoor lighting conditions are studied experimentally. Voltage is limited by generation–recombination dark current attributed to perimeter sidewall surface recombination based on the measurements of variable cell area. Bulk and perimeter recombination coefficients of 1.464 pA/mm2 and 0.2816 pA/mm, respectively, were extracted from dark current measurements. Resulting power conversion efficiency is strongly dependent on cell area, where current GaAs of 1-mm2 indoor photovoltaic cells demonstrates power conversion efficiency of approximately 19% at 580 lx of white LED illumination. Reductions in both bulk and perimeter sidewall recombination are required to increase maximum efficiency (while maintaining small cell area near 1 mm2) to approach the theoretical power conversion efficiency of 40% for GaAs cells under typical indoor lighting conditions. PMID:28133394

  17. Sulfur passivation of semi-insulating GaAs: Transition from Coulomb blockade to weak localization regime

    Energy Technology Data Exchange (ETDEWEB)

    Bagraev, N. T., E-mail: Bagraev@mail.ioffe.ru [Ioffe Institute (Russian Federation); Chaikina, E. I. [Centro de Investigacion Cientifica y de Educacion Superior de Ensenada, Division de Fisica Aplicada (Mexico); Danilovskii, E. Yu.; Gets, D. S.; Klyachkin, L. E.; L’vova, T. V.; Malyarenko, A. M. [Ioffe Institute (Russian Federation)

    2016-04-15

    The sulfur passivation of the semi-insulating GaAs bulk (SI GaAs) grown in an excess phase of arsenic is used to observe the transition from the Coulomb blockade to the weak localization regime at room temperature. The I–V characteristics of the SI GaAs device reveal nonlinear behavior that appears to be evidence of the Coulomb blockade process as well as the Coulomb oscillations. The sulfur passivation of the SI GaAs device surface results in enormous transformation of the I–V characteristics that demonstrate the strong increase of the resistance and Coulomb blockade regime is replaced by the electron tunneling processes. The results obtained are analyzed within frameworks of disordering SI GaAs surface that is caused by inhomogeneous distribution of the donor and acceptor anti-site defects which affects the conditions of quantum- mechanical tunneling. Weak localization processes caused by the preservation of the Fermi level pinning are demonstrated by measuring the negative magnetoresistance in weak magnetic fields at room temperature. Finally, the studies of the magnetoresistance at higher magnetic fields reveal the h/2e Aharonov–Altshuler–Spivak oscillations with the complicated behavior due to possible statistical mismatch of the interference paths in the presence of different microdefects.

  18. Catalytic role of gold nanoparticle in GaAs nanowire growth: a density functional theory study.

    Science.gov (United States)

    Kratzer, Peter; Sakong, Sung; Pankoke, Volker

    2012-02-08

    The energetics of Ga, As, and GaAs species on the Au(111) surface (employed as a model for Au nanoparticles) is investigated by means of density functional calculations. Apart from formation of the compound Au(7)Ga(2), Ga is found to form a surface alloy with gold with comparable ΔH ~ -0.5 eV for both processes. Dissociative adsorption of As(2) is found to be exothermic by more than 2 eV on both clean Au(111) and AuGa surface alloys. The As-Ga species formed by reaction of As with the surface alloy is sufficiently stable to cover the surface of an Au particle in vacuo in contact with a GaAs substrate. The results of the calculations are interpreted in the context of Au-catalyzed growth of GaAs nanowires. We argue that arsenic is supplied to the growth zone of the nanowire mainly by impingement of molecules on the gold particle and identify a regime of temperatures and As(2) partial pressures suitable for Au-catalyzed nanowire growth in molecular beam epitaxy. © 2012 American Chemical Society

  19. Surface potential based modeling of charge, current, and capacitances in DGTFET including mobile channel charge and ambipolar behaviour

    Science.gov (United States)

    Jain, Prateek; Yadav, Chandan; Agarwal, Amit; Chauhan, Yogesh Singh

    2017-08-01

    We present a surface potential based analytical model for double gate tunnel field effect transistor (DGTFET) for the current, terminal charges, and terminal capacitances. The model accounts for the effect of the mobile charge in the channel and captures the device physics in depletion as well as in the strong inversion regime. The narrowing of the tunnel barrier in the presence of mobile charges in the channel is incorporated via modeling of the inverse decay length, which is constant under channel depletion condition and bias dependent under inversion condition. To capture the ambipolar current behavior in the model, tunneling at the drain junction is also included. The proposed model is validated against TCAD simulation data and it shows close match with the simulation data.

  20. The miniband spectrum in (AlAs) sub M (GaAs) sub N (111)

    CERN Document Server

    Karavaev, G F; Egunov, R M

    2002-01-01

    The electron states for energies in the conduction band of (AlAs) sub M (GaAs) sub N (111) superlattices with M >= N (N < 10) are considered. The properties of such superlattices are mainly determined by electrons of X-valley in AlAs and L-valley in GaAs. The calculations are carried out on the basis of the envelope-function model of interface band mixing. Miniband spectra, symmetry and localization of wave functions, and also probabilities of the interminiband infrared absorption are defined and analyzed. It is shown that the latter have a significant magnitude not only at light polarization along the superlattice growth axis, but also at normal incidence of a light wave to the surface. The analysis has been normal incidence of a light wave to the surface. The analysis has shown the importance of consideration of X sub 5 -states belonging to the valence band for infrared absorption

  1. Sulfur passivation and contact methods for GaAs nanowire solar cells

    International Nuclear Information System (INIS)

    Tajik, N; Peng, Z; Kuyanov, P; LaPierre, R R

    2011-01-01

    The effect of sulfur passivation on core-shell p-n junction GaAs nanowire (NW) solar cells has been investigated. Devices of two types were investigated, consisting of indium tin oxide contact dots or opaque Au finger electrodes. Lateral carrier transport from the NWs to the contact fingers was achieved via a p-doped GaAs surface conduction layer. NWs between the opaque contact fingers had sidewall surfaces exposed for passivation by sulfur. The relative cell efficiency increased by 19% upon passivation. The contribution of the thin film grown between the NWs to the total cell efficiency was estimated by removing the NWs using a sonication procedure. Mechanisms of carrier transport and photovoltaic effects are discussed on the basis of spatially resolved laser scanning measurements.

  2. Manipulation of morphology and structure of the top of GaAs nanowires grown by molecular-beam epitaxy

    Science.gov (United States)

    Li, Lixia; Pan, Dong; Yu, Xuezhe; So, Hyok; Zhao, Jianhua

    2017-10-01

    Self-catalyzed GaAs nanowires (NWs) are grown on Si (111) substrates by molecular-beam epitaxy. The effect of different closing sequences of the Ga and As cell shutters on the morphology and structural phase of GaAs NWs is investigated. For the sequences of closing the Ga and As cell shutters simultaneously or closing the As cell shutter 1 min after closing the Ga cell shutter, the NWs grow vertically to the substrate surface. In contrast, when the As cell shutter is closed first, maintaining the Ga flux is found to be critical for the following growth of GaAs NWs, which can change the growth direction from [111] to . The evolution of the morphology and structural phase transition at the tips of these GaAs NWs confirm that the triple-phase-line shift mode is at work even for the growth with different cell shutter closing sequences. Our work will provide new insights for better understanding of the growth mechanism and realizing of the morphology and structure control of the GaAs NWs. Project supported partly by the MOST of China (No. 2015CB921503), the National Natural Science Foundation of China (Nos. 61504133, 61334006, 61404127), and Youth Innovation Promotion Association, CAS (No. 2017156).

  3. Reliability Analysis of III-V Solar Cells Grown on Recycled GaAs Substrates and an Electroplated Nickel Substrate

    Directory of Open Access Journals (Sweden)

    Ray-Hua Horng

    2013-01-01

    Full Text Available This study involved analyzing the reliability of two types of III-V solar cells: (1 III-V solar cells grown on new and recycled gallium arsenide (GaAs substrates and (2 the III-V solar cells transferred onto an electroplated nickel (Ni substrate as III-V thin-film solar cells by using a cross-shaped pattern epitaxial lift-off (CPELO process. The III-V solar cells were grown on new and recycled GaAs substrates to evaluate the reliability of the substrate. The recycled GaAs substrate was fabricated by using the CPELO process. The performance of the solar cells grown on the recycled GaAs substrate was affected by the uneven surface morphology of the recycled GaAs substrate, which caused the propagation of these dislocations into the subsequently grown active layer of the solar cell. The III-V solar cells were transferred onto an electroplated Ni substrate, which was also fabricated by using CPELO technology. The degradation of the III-V thin-film solar cell after conducting a thermal shock test could have been caused by microcracks or microvoids in the active layer or interface of the heterojunction, which resulted in the reduction of the external quantum efficiency response and the increase of recombination loss.

  4. DFT algorithms for bit-serial GaAs array processor architectures

    Science.gov (United States)

    Mcmillan, Gary B.

    1988-01-01

    Systems and Processes Engineering Corporation (SPEC) has developed an innovative array processor architecture for computing Fourier transforms and other commonly used signal processing algorithms. This architecture is designed to extract the highest possible array performance from state-of-the-art GaAs technology. SPEC's architectural design includes a high performance RISC processor implemented in GaAs, along with a Floating Point Coprocessor and a unique Array Communications Coprocessor, also implemented in GaAs technology. Together, these data processors represent the latest in technology, both from an architectural and implementation viewpoint. SPEC has examined numerous algorithms and parallel processing architectures to determine the optimum array processor architecture. SPEC has developed an array processor architecture with integral communications ability to provide maximum node connectivity. The Array Communications Coprocessor embeds communications operations directly in the core of the processor architecture. A Floating Point Coprocessor architecture has been defined that utilizes Bit-Serial arithmetic units, operating at very high frequency, to perform floating point operations. These Bit-Serial devices reduce the device integration level and complexity to a level compatible with state-of-the-art GaAs device technology.

  5. Growth, strain relaxation properties and high-κ dielectric integration of mixed-anion GaAs1-ySby metamorphic materials

    Science.gov (United States)

    Zhu, Y.; Clavel, M.; Goley, P.; Hudait, M. K.

    2014-10-01

    Mixed-anion, GaAs1-ySby metamorphic materials with a wide range of antimony (Sb) compositions extending from 15% to 62%, were grown by solid source molecular beam epitaxy (MBE) on GaAs substrates. The impact of different growth parameters on the Sb composition in GaAs1-ySby materials was systemically investigated. The Sb composition was well-controlled by carefully optimizing the As/Ga ratio, the Sb/Ga ratio, and the substrate temperature during the MBE growth process. High-resolution x-ray diffraction demonstrated a quasi-complete strain relaxation within each composition of GaAs1-ySby. Atomic force microscopy exhibited smooth surface morphologies across the wide range of Sb compositions in the GaAs1-ySby structures. Selected high-κ dielectric materials, Al2O3, HfO2, and Ta2O5 were deposited using atomic layer deposition on the GaAs0.38Sb0.62 material, and their respective band alignment properties were investigated by x-ray photoelectron spectroscopy (XPS). Detailed XPS analysis revealed a valence band offset of >2 eV for all three dielectric materials on GaAs0.38Sb0.62, indicating the potential of utilizing these dielectrics on GaAs0.38Sb0.62 for p-type metal-oxide-semiconductor (MOS) applications. Moreover, both Al2O3 and HfO2 showed a conduction band offset of >2 eV on GaAs0.38Sb0.62, suggesting these two dielectrics can also be used for n-type MOS applications. The well-controlled Sb composition in several GaAs1-ySby material systems and the detailed band alignment analysis of multiple high-κ dielectric materials on a fixed Sb composition, GaAs0.38Sb0.62, provides a pathway to utilize GaAs1-ySby materials in future microelectronic and optoelectronic applications.

  6. The characterisation of selective proton damage on GaAs solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Aliyu, Y.H. (School of Electrical, Electronic and Systems Engineering, Wales Univ., Cardiff (United Kingdom)); Morgan, D.V. (School of Electrical, Electronic and Systems Engineering, Wales Univ., Cardiff (United Kingdom)); Bunce, R.W. (School of Electrical, Electronic and Systems Engineering, Wales Univ., Cardiff (United Kingdom))

    1993-01-16

    Selective ion bombardment damage was induced on n/n[sup +] GaAs Schottky barrier solar cell structure using several proton energies and doses. The damage in the surface, interface, and the bulk regions were characterised by I-V, C-V, and thermally stimulated current technique (TSC). A correlation between the selective damages and the nature of the defects and their location was obtained. (orig.)

  7. Directional growth of Ge on GaAs at 175 deg. C using plasma-generated nanocrystals

    International Nuclear Information System (INIS)

    Johnson, Erik V.; Roca i Cabarrocas, Pere; Patriarche, Gilles

    2008-01-01

    We demonstrate the directional growth of Ge on a GaAs (100) wafer at 175 deg. C using radio-frequency plasma-enhanced chemical vapor deposition at 13.56 MHz under conditions where nanocrystals are the primary contributors to film growth. High resolution transmission electron microscopy (HRTEM) verifies the transport of plasma-formed nanocrystals to the substrate surface where they are initially mobile. Furthermore, cross-sectional HRTEM images show directional growth on the GaAs wafer, wherein the incident Ge nanocrystals have adopted the orientation of the underlying lattice

  8. Reflectance-anisotropy study of the dynamics of molecular beam epitaxy growth of GaAs and InGaAs on GaAs(001)

    International Nuclear Information System (INIS)

    Ortega-Gallegos, J.; Lastras-Martinez, A.; Lastras-Martinez, L.F.; Balderas-Navarro, R.E.

    2008-01-01

    Reflectance-Anisotropy (RA) observations during the Molecular Beam Epitaxy (MBE) growth of zincblende semiconductors films were carried out using the E 1 optical transition as a probe. We follow the kinetics of the deposition of GaAs and In 0.3 Ga 0.7 As on GaAs(001) at growth rates of 0.2 and 0.25 ML/s, respectively. During growth we used a constant As 4 or As 2 flux pressure of 5 x 10 -6 Torr. Clear RA-oscillations were observed during growth with a period that nearly coincides with the growth period for a Ga-As bilayer. RHEED was used as an auxiliary technique in order to obtain a correlation between RHEED and RA oscillations. On the basis of our results, we argue that RAS oscillations are mainly associated to periodic changes in surface atomic structure. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Reflectance-anisotropy study of the dynamics of molecular beam epitaxy growth of GaAs and InGaAs on GaAs(001)

    Energy Technology Data Exchange (ETDEWEB)

    Ortega-Gallegos, J.; Lastras-Martinez, A.; Lastras-Martinez, L.F. [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi. Alvaro Obregon 64, San Luis Potosi (Mexico); Balderas-Navarro, R.E. [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi. Alvaro Obregon 64, San Luis Potosi (Mexico); Facultad de Ciencias, Universidad Autonoma de San Luis Potosi. Alvaro Obregon 64, San Luis Potosi (Mexico)

    2008-07-01

    Reflectance-Anisotropy (RA) observations during the Molecular Beam Epitaxy (MBE) growth of zincblende semiconductors films were carried out using the E{sub 1} optical transition as a probe. We follow the kinetics of the deposition of GaAs and In{sub 0.3}Ga{sub 0.7}As on GaAs(001) at growth rates of 0.2 and 0.25 ML/s, respectively. During growth we used a constant As{sub 4} or As{sub 2} flux pressure of 5 x 10{sup -6} Torr. Clear RA-oscillations were observed during growth with a period that nearly coincides with the growth period for a Ga-As bilayer. RHEED was used as an auxiliary technique in order to obtain a correlation between RHEED and RA oscillations. On the basis of our results, we argue that RAS oscillations are mainly associated to periodic changes in surface atomic structure. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Coherent oscillations of holes in GaAs0. 86P0. 14/Al0. 7Ga0. 3As ...

    Indian Academy of Sciences (India)

    2014-02-12

    Feb 12, 2014 ... We show that in a GaAs0.86P0.14/Al0.7Ga0.3As near-surface quantum well, there is coherent oscillation of holes observed in time-resolved reflectivity signal when the top barrier of the quantum well is sufficiently thin. The quantum well states interact with the surface states under the influence of the surface ...

  11. Ion implanted GaAs microwave FET's

    Science.gov (United States)

    Gill, S. S.; Blockley, E. G.; Dawsey, J. R.; Foreman, B. J.; Woodward, J.; Ball, G.; Beard, S. J.; Gaskell, J. M.; Allenson, M. B.

    1988-06-01

    The combination of ion implantation and photolithographic patterning techniques was applied to the fabrication of GaAs microwave FETs to provide a large number of devices having consistently predictable dc and high frequency characteristics. To validate the accuracy and repeatability of the high frequency device parameters, an X-band microwave circuit was designed and realized. The performance of this circuit, a buffered amplifier, is very close to the design specification. The availability of a large number of reproducible, well-characterized transistors enabled work to commence on the development of a large signal model for FETs. Work in this area is also described.

  12. A Ga 2O 3 passivation technique compatible with GaAs device processing

    Science.gov (United States)

    Hong, M.; Passlack, M.; Mannaerts, J. P.; Harris, T. D.; Schnoes, M. L.; Opila, R. L.; Krautter, H. W.

    1997-04-01

    Electronic and structural properties of ex-situ fabricated Ga 2O 3GaAs interfaces have been investigated. The fabrication comprises thermal desorption of native oxide and subsequent Ga 2O 3 film deposition on (100) GaAs wafers in ultra-high vacuum. Interfacial x-ray photoelectron spectroscopy revealed the absence of As xO y indicating thermodynamic stability of the oxide-GaAs interface. A low interface recombination velocity S of 9000 cm/s equivalent to an interface state density Dit in the upper 10 10 cm -2 eV -1 range has been inferred. The technique provides excellent passivation for GaAs wafers or surfaces exposed to room air and/or processing environments during fabrication of devices such as FETs, HBTs, etc.

  13. Infrared Energy Harvesting in Millimeter-Scale GaAs Photovoltaics.

    Science.gov (United States)

    Moon, Eunseong; Blaauw, David; Phillips, Jamie D

    2017-11-01

    The design and characterization of mm-scale GaAs photovoltaic cells are presented and demonstrate highly efficient energy harvesting in the near infrared. Device performance is improved dramatically by optimization of the device structure for the near-infrared spectral region and improving surface and sidewall passivation with ammonium sulfide treatment and subsequent silicon nitride deposition. The power conversion efficiency of a 6.4 mm 2 cell under 660 nW/mm 2 NIR illumination at 850 nm is greater than 30 %, which is higher than commercial crystalline silicon solar cells under similar illumination conditions. Critical performance limiting factors of sub-mm scale GaAs photovoltaic cells are addressed and compared to theoretical calculations.

  14. Photoluminescence studies of GaAs quantum dots and quantum rings

    Energy Technology Data Exchange (ETDEWEB)

    Nemcsics, Akos; Podoer, Balint [Obuda University, Institute for Microelectronics and Technology, Budapest (Hungary); Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, Budapest (Hungary); Balazs, Janos; Makai, Janos [Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, Budapest (Hungary); Stemmann, Andrea [Institut fuer Angewandte Physik und Zentrum fuer Mikrostrukturforschung, Hamburg (Germany)

    2011-09-15

    Recently, the growth of self-assembled quantum structures has been intensively investigated for basics physics and device application. In our work, self-assembled strain-free GaAs quantum dots and quantum rings were investigated by the photoluminescence technique. The GaAs nanostructures are fabricated on AlGaAs (001) surface by droplet epitaxy method. Temperature dependent photoluminescence spectra were measured in the range of room temperature and 4 K. We give an explanation on the broadening of the photoluminescence peaks for different quantum structures. The calculated electronic structure is compared with the photoluminescence data (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Mass and energy dispersive recoil spectrometry of GaAs structures

    International Nuclear Information System (INIS)

    Hult, M.

    1994-01-01

    Mass and energy dispersive Recoil Spectrometry (RS) using heavy ions at energies of about 0.2Α-0.8Α MeV has attracted much interest recently due to its potential for separately and unambiguously generating information on isotopic depth distributions. The principal advantages of mass and energy dispersive RS are that both light and heavy elements can be separately studied simultaneously and problems caused by chemical matrix effects are avoided since the technique is based on high energy nucleus-nucleus scattering. In order to elucidate reactions taking place in various GaAs structures, Time of flight-Energy (ToF-E) RS was developed to allow Ga and As to be studied separately down to depths of about 500-800 nm with a depth resolution of about 16 nm at the surface. This was shown in a study of an Al x Ga 1-x As quantum-well structure. The benefits of using ToF-E RS on GaAs structures were further demonstrated in studies of Co/GaAs and CoSi 2 /GaAs reactions, as well as in a study of the composition of MOCVD grown Al x Ga 1-x As. Most recoil measurements employed 127 I at energies of about 50-90 MeV as projectiles. The recoil detector telescope consisted of a silicon energy detector and two carbon foil time pick-off detectors separated by a variable flight length of 213.5-961 mm. The reactions taking place between various thin films and GaAs were also studied using complementary techniques such as XRD, XPS and SEM. Co was found to react extensively with GaAs, already at about 300 degrees C, making it unsuitable as a contact material. Thin films of Co and Si were found to react extensively with each other and to form CoSi 2 at 500 degrees C and above. CoSi 2 , a low resistivity silicide, turned out to be stable on GaAs, at least up to 700 degrees C. Considerable grain growth could cause problems, however, in the use of CoSi 2 -contacts. 112 refs, figs, tabs

  16. Statistical investigation of surface bound ions and further development of BION server to include pH and salt dependence.

    Science.gov (United States)

    Petukh, Marharyta; Zhang, Min; Alexov, Emil

    2015-12-15

    Ions are engaged in multiple biological processes in cells. By binding to the macromolecules or being mobile in the solvent, they maintain the integrity of the structure of macromolecules; participate in their enzymatic activity; or screen electrostatic interactions. While experimental methods are not always able to assign the exact location of ions, computational methods are in demand. Although the majority of computational methods are successful in predicting the position of ions buried inside macromolecules, they are less effective in deciphering positions of surface bound ions. Here, we propose the new BION algorithm (http://compbio.clemson.edu/bion_server_ph/) that predicts the location of the surface bound ions. It is more efficient and accurate compared to the previous version since it uses more advanced clustering algorithm in combination with pairing rules. In addition, the BION webserver allows specifying the pH and the salt concentration in predicting ions positions. © 2015 Wiley Periodicals, Inc.

  17. Experimental investigations of atomic ordering effects in the epitaxial Ga{sub x}In{sub 1-x}P, coherently grown on GaAs (100) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Seredin, P.V., E-mail: paul@phys.vsu.ru [Voronezh State University, Universitetskaya pl., 1, 394006 Voronezh (Russian Federation); Goloshchapov, D.L.; Khudyakov, Yu.Yu.; Lenshin, A.S.; Lukin, A.N. [Voronezh State University, Universitetskaya pl., 1, 394006 Voronezh (Russian Federation); Arsentyev, I.N., E-mail: arsentyev@mail.ioffe.ru [Ioffe Physical and Technical Institute, Polytekhnicheskaya, 26, 194021 St-Petersburg (Russian Federation); Prutskij, Tatiana, E-mail: prutskij@yahoo.com [Instituto de Ciencias, Benemérita Universidad Autónoma de Puebla, Privada 17 Norte, No 3417, Col San Miguel Hueyotlipan, 72050 Puebla, Puebla (Mexico)

    2017-03-15

    A range of structural and spectroscopic techniques were used for the study of the properties of epitaxial Ga{sub x}In{sub 1-x}P alloys with an ordered arrangement of atoms in a crystal lattice grown by MOCVD on single-crystalline substrates of GaAs (100). The appearance of atomic ordering in the coherent growth conditions of the ordered Ga{sub x}In{sub 1-x}P alloy on GaAs (100) resulted in cardinal changes of the structural and optical properties of semiconductor in comparison to disordered alloys, including the change of the crystal lattice parameter and, consequently, reduced crystal symmetry, decreased band gap and formation of two different types of surface nanorelief. This is the first report of the calculation of parameters of the crystal lattice in Ga{sub x}In{sub 1-x}P with ordering taking into account the elastic stresses dependent on long-range ordering. Based on the variance analysis data with regard to the IR-reflection spectra as well as the UV-spectroscopy data obtained in the transmission-reflection mode, the main optical characteristics of the ordered Ga{sub x}In{sub 1-x}P alloys were determined for the first time, namely, refractive index dispersion and high-frequency dielectric constant. All of the experimental results were in good agreement with the previously developed theoretical beliefs.

  18. Measuring evapotranspiration: comparison of in situ micrometeorological methods including eddy covariance, scintillometer, Bowen ratio, and surface renewal method

    Science.gov (United States)

    Poznikova, G.; Fischer, M.; Orsag, M.; Trnka, M.

    2016-12-01

    Quantifying evapotranspiration (ET) is a challenging task as different methods can induce large discrepancies. Comparisons of various techniques are not rare, however it is demanding to maintain several in situ measurements for longer time. In our study, we aimed to compare four micrometeorological methods measuring ET at relatively large homogeneous area. The study took place on a winter wheat field in Polkovice, the Czech Republic (49°23'42.8"N 17°14'47.3"E) from Jul 1st 2015 until Sep 15th 2015. In the centre of 26-ha experimental field we deployed the eddy covariance (EC) system, the Bowen ratio energy balance (BREB) system, thermocouples for surface renewal technique, and the surface layer scintillometer with 106 m path length. Additionally, we installed the large aperture scintillometer with 617 m path length across the field. Our results showed good agreement of compared methods during the wetter periods of the measurements with slight overestimation of the scintillometry. The BREB method agreed the best with EC. Both scintillometers gave very consistent results throughout the whole measurement period. The EC tended to underestimate other methods. One of potential reasons is energy balance disclosure which reached 27.4 % for the measured period. The surface renewal method showed good potential however, need to be further tested in our conditions. Our experimental locality is one of several we are running as a part of ground based measurement network for ET estimation. Gained results helped us to enhance and optimise our network to ensure effective and reliable data acquisition for future validation of airborne images (satellite based drought monitoring).

  19. Anisotropic Pauli Spin Blockade of Holes in a GaAs Double Quantum Dot

    Science.gov (United States)

    Wang, Qingwen; Klochan, Oleh; Hung, Jo-Tzu; Culcer, Dimitrie; Farrer, Ian; Ritchie, David; Hamilton, Alex

    Electrically defined semiconductor quantum dots are appealing systems for spin manipulation and quantum information processing. Thanks to the weak hyperfine interaction and the strong spin-orbit interaction, heavy-holes in GaAs are promising candidates for all-electrical spin manipulation. However, making stable quantum dots in GaAs has only become possible recently, mainly because of difficulties in device fabrication and device stability. Here we present electrical transport measurements of heavy-holes in a lateral double quantum dot based on a GaAs /AlxGa1 - x As heterostructure. We observe clear Pauli spin blockade and show that the lifting of the spin blockade by an external magnetic field is extremely anisotropic. Numerical calculations of heavy-hole transport through a double quantum dot in the presence of strong spin-orbit interaction demonstrate quantitative agreement with experimental results, which indicates that the observed anisotropy can be explained by the anisotropic hole g-factor and the surface Dresselhaus spin-orbit coupling.

  20. Intense electron beams from GaAs photocathodes as a tool for molecular and atomic physics

    International Nuclear Information System (INIS)

    Krantz, Claude

    2009-01-01

    We present cesium-coated GaAs photocathodes as reliable sources of intense, quasi-monoenergetic electron beams in atomic and molecular physics experiments. In long-time operation of the Electron Target of the ion storage ring TSR in Heidelberg, cold electron beams could be realised at steadily improving intensity and reliability. Minimisation of processes degrading the quantum efficiency allowed to increase the extractable current to more than 1mA at usable cathode lifetimes of 24 h or more. The benefits of the cold electron beam with respect to its application to electron cooling and electron-ion recombination experiments are discussed. Benchmark experiments demonstrate the superior cooling force and energy resolution of the photoelectron beam compared to its thermionic counterparts. The long period of operation allowed to study the long-time behaviour of the GaAs samples during multiple usage cycles at the Electron Target and repeated in-vacuum surface cleaning by atomic hydrogen exposure. An electron emission spectroscopy setup has been implemented at the photocathode preparation chamber of the Electron Target. Among others, this new facility opened the way to a novel application of GaAs (Cs) photocathodes as robust, ultraviolet-driven electron emitters. Based on this principle, a prototype of an electron gun, designed for implementation at the HITRAP setup at GSI, has been built and taken into operation successfully. (orig.)

  1. Intense electron beams from GaAs photocathodes as a tool for molecular and atomic physics

    Energy Technology Data Exchange (ETDEWEB)

    Krantz, Claude

    2009-10-28

    We present cesium-coated GaAs photocathodes as reliable sources of intense, quasi-monoenergetic electron beams in atomic and molecular physics experiments. In long-time operation of the Electron Target of the ion storage ring TSR in Heidelberg, cold electron beams could be realised at steadily improving intensity and reliability. Minimisation of processes degrading the quantum efficiency allowed to increase the extractable current to more than 1mA at usable cathode lifetimes of 24 h or more. The benefits of the cold electron beam with respect to its application to electron cooling and electron-ion recombination experiments are discussed. Benchmark experiments demonstrate the superior cooling force and energy resolution of the photoelectron beam compared to its thermionic counterparts. The long period of operation allowed to study the long-time behaviour of the GaAs samples during multiple usage cycles at the Electron Target and repeated in-vacuum surface cleaning by atomic hydrogen exposure. An electron emission spectroscopy setup has been implemented at the photocathode preparation chamber of the Electron Target. Among others, this new facility opened the way to a novel application of GaAs (Cs) photocathodes as robust, ultraviolet-driven electron emitters. Based on this principle, a prototype of an electron gun, designed for implementation at the HITRAP setup at GSI, has been built and taken into operation successfully. (orig.)

  2. Electrical properties of spin coated ultrathin titanium oxide films on GaAs

    Science.gov (United States)

    Dutta, Shankar; Pal, Ramjay; Chatterjee, Ratnamala

    2015-04-01

    In recent years, ultrathin (MOS) technology. This paper discusses deposition of ultrathin TiO2 films (˜10 nm) on GaAs substrates (one sulfur-passivated, another unpassivated) by spin coating technique. The sulfur passivation is done to reduce the surface states of GaAs substrate. After annealing at 400 °C in a nitrogen environment, the TiO2 films are found to be polycrystalline in nature with rutile phase. The TiO2 films exhibit consistent grain size of 10-20 nm with thickness around 10-12 nm. Dielectric constants of the films are found to be 65.4 and 47.1 corresponding to S-passivated and unpassivated substrates, respectively. Corresponding threshold voltages of the MOS structures are measured to be -0.1 V to -0.3 V for the S-passivated and unpassivated samples, respectively. The S-passivated TiO2 film showed improved (lower) leakage current density (5.3 × 10-4 A cm-2 at 3 V) compared to the unpassivated film (1.8 × 10-3 A/cm2 at 3 V). Dielectric breakdown-field of the TiO2 films on S-passivated and unpassivated GaAs samples are found to be 8.4 MV cm-1 and 7.2 MV cm-1 respectively.

  3. Heterojunction Diodes and Solar Cells Fabricated by Sputtering of GaAs on Single Crystalline Si

    Directory of Open Access Journals (Sweden)

    Santiago Silvestre

    2015-04-01

    Full Text Available This work reports fabrication details of heterojunction diodes and solar cells obtained by sputter deposition of amorphous GaAs on p-doped single crystalline Si. The effects of two additional process steps were investigated: A hydrofluoric acid (HF etching treatment of the Si substrate prior to the GaAs sputter deposition and a subsequent annealing treatment of the complete layered system. A transmission electron microscopy (TEM exploration of the interface reveals the formation of a few nanometer thick SiO2 interface layer and some crystallinity degree of the GaAs layer close to the interface. It was shown that an additional HF etching treatment of the Si substrate improves the short circuit current and degrades the open circuit voltage of the solar cells. Furthermore, an additional thermal annealing step was performed on some selected samples before and after the deposition of an indium tin oxide (ITO film on top of the a-GaAs layer. It was found that the occurrence of surface related defects is reduced in case of a heat treatment performed after the deposition of the ITO layer, which also results in a reduction of the dark saturation current density and resistive losses.

  4. Radiation-curing of acrylate composites including carbon fibres: A customized surface modification for improving mechanical performances

    International Nuclear Information System (INIS)

    Martin, Arnaud; Pietras-Ozga, Dorota; Ponsaud, Philippe; Kowandy, Christelle; Barczak, Mariusz; Defoort, Brigitte; Coqueret, Xavier

    2014-01-01

    The lower transverse mechanical properties of radiation-cured acrylate-based composites reinforced with carbon-fibre with respect to the thermosettable analogues was investigated from the viewpoint of chemical interactions at the interface between the matrix and the carbon material. XPS analysis of representative commercial carbon fibres revealed the presence of a significant amount of chemical functions potentially exerting an adverse effect on the initiation and propagation of the free radical polymerization initiated under high energy radiation. The EB-induced polymerization of n-butyl acrylate as a simple model monomer was conducted in the presence of various aromatic additives exhibiting a strong inhibiting effect, whereas thiols efficiently sensitize the initiation mechanism and undergo transfer reactions. A method based on the surface modification of sized fibres by thiomalic acid is proposed for overcoming the localized inhibition phenomenon and for improving the mechanical properties of the resulting acrylate-based composites. - Highlights: • Surface functions of C-fibres are analyzed for their effect on radical reaction. • Irradiation of nBu-acrylate in presence of aromatic additives reveals inhibition. • Thiol groups sensitize the radiation-initiated polymerization of nBu-acrylate. • Modification of C-fibres with thiomalic acid enhances composite properties

  5. A neural network potential energy surface for the F + CH4reaction including multiple channels based on coupled cluster theory.

    Science.gov (United States)

    Chen, Jun; Xu, Xin; Liu, Shu; Zhang, Dong H

    2018-03-22

    We report here a new global and full dimensional potential energy surface (PES) for the F + CH4 reaction. This PES was constructed by using neural networks (NN) fitting to about 99 000 ab initio energies computed at the UCCSD(T)-F12a/aug-cc-pVTZ level of theory, and the correction terms considering the influence of a larger basis set as well as spin-orbit couplings were further implemented with a hierarchial scheme. This PES, covering both the abstraction and substitution channels, has an overall fitting error of 8.24 meV in total, and 4.87 meV for energies within 2.5 eV using a segmented NN fitting method, and is more accurate than the previous PESs.

  6. Electrons, holes, and excitons in GaAs polytype quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Climente, Juan I.; Segarra, Carlos; Rajadell, Fernando; Planelles, Josep, E-mail: josep.planelles@uji.es [Departament de Química Física i Analítica, Universitat Jaume I, E-12080 Castelló (Spain)

    2016-03-28

    Single and multi-band k⋅p Hamiltonians for GaAs crystal phase quantum dots are used to assess ongoing experimental activity on the role of such factors as quantum confinement, spontaneous polarization, valence band mixing, and exciton Coulomb interaction. Spontaneous polarization is found to be a dominating term. Together with the control of dot thickness [Vainorius et al., Nano Lett. 15, 2652 (2015)], it enables wide exciton wavelength and lifetime tunability. Several new phenomena are predicted for small diameter dots [Loitsch et al., Adv. Mater. 27, 2195 (2015)], including non-heavy hole ground state, strong hole spin admixture, and a type-II to type-I exciton transition, which can be used to improve the absorption strength and reduce the radiative lifetime of GaAs polytypes.

  7. A comparative study of Mg and Pt contacts on semi-insulating GaAs: electrical and XPS characterization

    Czech Academy of Sciences Publication Activity Database

    Dubecký, F.; Kindl, Dobroslav; Hubík, Pavel; Mičušík, M.; Dubecký, M.; Boháček, P.; Vanko, G.; Gombia, E.; Nečas, V.; Mudroň, J.

    2017-01-01

    Roč. 395, Feb (2017), s. 131-135 ISSN 0169-4332 Institutional support: RVO:68378271 Keywords : semi-insulating GaAs * metal-semiconductor contact * interface * work function * electron transport * XPS Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.387, year: 2016

  8. Diffusion of $^{52}$Mn in GaAs

    CERN Multimedia

    2002-01-01

    Following our previous diffusion studies performed with the modified radiotracer technique, we propose to determine the diffusion of Mn in GaAs under intrinsic conditions in a previously un-investigated temperature region. The aim of the presently proposed experiments is twofold. \\begin{itemize} \\item A quantitative study of Mn diffusion in GaAs at low Mn concentrations would be decisive in providing new information on the diffusion mechanism involved. \\item As Ga vacancies are expected to be involved in the Mn diffusion process it can be predicted that also the GaAs material growth technique most likely plays a role. To clarify this assumption diffusion experiments will be conducted for GaAs material grown by two different techniques. \\end{itemize} For such experiments we ask for two runs of 3 shifts (total of 6 shifts) with $^{52}$Mn$^{+}$ ion beam.

  9. Locating critical points on multi-dimensional surfaces by genetic algorithm: test cases including normal and perturbed argon clusters

    Science.gov (United States)

    Chaudhury, Pinaki; Bhattacharyya, S. P.

    1999-03-01

    It is demonstrated that Genetic Algorithm in a floating point realisation can be a viable tool for locating critical points on a multi-dimensional potential energy surface (PES). For small clusters, the standard algorithm works well. For bigger ones, the search for global minimum becomes more efficient when used in conjunction with coordinate stretching, and partitioning of the strings into a core part and an outer part which are alternately optimized The method works with equal facility for locating minima, local as well as global, and saddle points (SP) of arbitrary orders. The search for minima requires computation of the gradient vector, but not the Hessian, while that for SP's requires the information of the gradient vector and the Hessian, the latter only at some specific points on the path. The method proposed is tested on (i) a model 2-d PES (ii) argon clusters (Ar 4-Ar 30) in which argon atoms interact via Lennard-Jones potential, (iii) Ar mX, m=12 clusters where X may be a neutral atom or a cation. We also explore if the method could also be used to construct what may be called a stochastic representation of the reaction path on a given PES with reference to conformational changes in Ar n clusters.

  10. SWRT: A package for semi-analytical solutions of surface wave propagation, including mode conversion, across transversely aligned vertical discontinuities

    Directory of Open Access Journals (Sweden)

    A. Datta

    2018-03-01

    Full Text Available We present a suite of programs that implement decades-old algorithms for computation of seismic surface wave reflection and transmission coefficients at a welded contact between two laterally homogeneous quarter-spaces. For Love as well as Rayleigh waves, the algorithms are shown to be capable of modelling multiple mode conversions at a lateral discontinuity, which was not shown in the original publications or in the subsequent literature. Only normal incidence at a lateral boundary is considered so there is no Love–Rayleigh coupling, but incidence of any mode and coupling to any (other mode can be handled. The code is written in Python and makes use of SciPy's Simpson's rule integrator and NumPy's linear algebra solver for its core functionality. Transmission-side results from this code are found to be in good agreement with those from finite-difference simulations. In today's research environment of extensive computing power, the coded algorithms are arguably redundant but SWRT can be used as a valuable testing tool for the ever evolving numerical solvers of seismic wave propagation. SWRT is available via GitHub (https://github.com/arjundatta23/SWRT.git.

  11. SWRT: A package for semi-analytical solutions of surface wave propagation, including mode conversion, across transversely aligned vertical discontinuities

    Science.gov (United States)

    Datta, Arjun

    2018-03-01

    We present a suite of programs that implement decades-old algorithms for computation of seismic surface wave reflection and transmission coefficients at a welded contact between two laterally homogeneous quarter-spaces. For Love as well as Rayleigh waves, the algorithms are shown to be capable of modelling multiple mode conversions at a lateral discontinuity, which was not shown in the original publications or in the subsequent literature. Only normal incidence at a lateral boundary is considered so there is no Love-Rayleigh coupling, but incidence of any mode and coupling to any (other) mode can be handled. The code is written in Python and makes use of SciPy's Simpson's rule integrator and NumPy's linear algebra solver for its core functionality. Transmission-side results from this code are found to be in good agreement with those from finite-difference simulations. In today's research environment of extensive computing power, the coded algorithms are arguably redundant but SWRT can be used as a valuable testing tool for the ever evolving numerical solvers of seismic wave propagation. SWRT is available via GitHub (https://github.com/arjundatta23/SWRT.git).

  12. The Features of GaAs and GaP Semiconductor Cathodes in an Infrared Converter System

    Science.gov (United States)

    Kurt, H. Hilal; Tanrıverdi, Evrim

    2017-07-01

    The aim of this study is to examine the electrical and optical comparative analysis of semi-insulating GaAs and GaP photoconductive electrodes in an infrared converter system with a resistivity of >107 Ω cm for the same interelectrode distance d and gas pressure p experimentally and theoretically, when the discharge cell has been filled by argon. To provide the stability of the semiconductor electrode in Ar media, the experiments were carried out in Townsend and glow discharge regimes for various parameter sets of pressure, interelectrode gap and discharge voltage. When the discharge exceeds a critical voltage value, some N-shape CVC s, which stem from both semiconductors and Ar gas, have been observed. To compare the features of the GaAs and GaP cathodes, the COMSOL multiphysics programme is used under the Ar media. The mean electron energy, thermal velocity, surface charge density, space charge and initial electron densities, and electron mobilities have been calculated for both semiconductor materials. It has been found that the electron mobility μe, electron thermal velocity, surface charge density σ and mean electron energy of GaAs is higher than those of GaP; hence, GaAs has better opto-electronic features compared to GaP. In addition, the experiments on the optical explorations prove that GaAs exhibit better optical response in the infrared region. The explored transport characteristics of the semiconductor electrodes are of importance, and they have to be taken into account when studying plasma cells.

  13. Measured Properties of Turbulent Premixed Flames for Model Assessment, Including Burning Velocities, Stretch Rates, and Surface Densities (Postprint)

    Science.gov (United States)

    2006-10-01

    conditions was stabilized on a large two-dimensional slot Bunsen burner . It was found that the turbulent burning velocity of Bunsen flames depends...burning velocity of Bunsen flames are inadequate because they should include two additional parameters: mean velocity Ū and burner width W. These...corru- gated) flame with well-defined boundary conditions was stabilized on a large two-dimensional slot Bunsen burner . It was found that the turbulent

  14. GaAs on Si epitaxy by aspect ratio trapping: Analysis and reduction of defects propagating along the trench direction

    Energy Technology Data Exchange (ETDEWEB)

    Orzali, Tommaso, E-mail: tommaso.orzali@sematech.org; Vert, Alexey; O' Brien, Brendan; Papa Rao, Satyavolu S. [SEMATECH, 257 Fuller Rd Suite 2200, Albany, New York 12203 (United States); Herman, Joshua L.; Vivekanand, Saikumar [College of Nanoscale Science and Engineering, SUNY Polytechnic Institute, 251 Fuller Road, Albany, New York 12203 (United States); Hill, Richard J. W. [Now at Micron Technologies, 8000 S Federal Way, Boise, Idaho 83716 (United States); Karim, Zia [AIXTRON, Inc., 1139 Karlstad Dr., Sunnyvale, California 94089 (United States)

    2015-09-14

    The Aspect Ratio Trapping technique has been extensively evaluated for improving the quality of III-V heteroepitaxial films grown on Si, due to the potential for terminating defects at the sidewalls of SiO{sub 2} patterned trenches that enclose the growth region. However, defects propagating along the trench direction cannot be effectively confined with this technique. We studied the effect of the trench bottom geometry on the density of defects of GaAs fins, grown by metal-organic chemical vapor deposition on 300 mm Si (001) wafers inside narrow (<90 nm wide) trenches. Plan view and cross sectional Scanning Electron Microscopy and Transmission Electron Microscopy, together with High Resolution X-Ray Diffraction, were used to evaluate the crystal quality of GaAs. The prevalent defects that reach the top surface of GaAs fins are (111) twin planes propagating along the trench direction. The lowest density of twin planes, ∼8 × 10{sup 8 }cm{sup −2}, was achieved on “V” shaped bottom trenches, where GaAs nucleation occurs only on (111) Si planes, minimizing the interfacial energy and preventing the formation of antiphase boundaries.

  15. Growth of GaAs “nano ice cream cones” by dual wavelength pulsed laser ablation

    Science.gov (United States)

    Schamp, C. T.; Jesser, W. A.; Shivaram, B. S.

    2007-05-01

    Harmonic generation crystals inherently offer the possibility of using multiple wavelengths of light in a single laser pulse. In the present experiment, the fundamental (1064 nm) and second harmonic (532 nm) wavelengths from an Nd:YAG laser are focused together on GaAs and GaSb targets for ablation. Incident energy densities up to about 45 J/cm 2 at 10 Hz with substrate temperatures between 25 and 600 °C for durations of about 60 s have been used in an ambient gas pressure of about 10 -6 Torr. The ablated material was collected on electron-transparent amorphous carbon films for TEM analysis. Apart from a high density of isolated nanocrystals, the most common morphology observed consists of a crystalline GaAs cone-like structure in contact with a sphere of liquid Ga, resembling an "ice cream cone", typically 50-100 nm in length. For all of the heterostuctures of this type, the liquid/solid/vacuum triple junction is found to correspond to the widest point on the cone. These heterostructures likely form by preferential evaporation of As from molten GaAs drops ablated from the target. The resulting morphology minimizes the interfacial and surface energies of the liquid Ga and solid GaAs.

  16. Implantation annealing in GaAs by incoherent light

    International Nuclear Information System (INIS)

    Davies, D.E.; Ryan, T.G.; Soda, K.J.; Comer, J.J.

    1983-01-01

    Implanted GaAs has been successfully activated through concentrating the output of quartz halogen lamps to anneal in times of the order of 1 sec. The resulting layers are not restricted by the reduced mobilities and thermal instabilities of laser annealed GaAs. Better activation can be obtained than with furnace annealing but this generally requires maximum temperatures >= 1050degC. (author)

  17. Enhanced Efficiency of GaAs Single-Junction Solar Cells with Inverted-Cone-Shaped Nanoholes Fabricated Using Anodic Aluminum Oxide Masks

    Directory of Open Access Journals (Sweden)

    Kangho Kim

    2013-01-01

    Full Text Available The GaAs solar cells are grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD and fabricated by photolithography, metal evaporation, annealing, and wet chemical etch processes. Anodized aluminum oxide (AAO masks are prepared from an aluminum foil by a two-step anodization method. Inductively coupled plasma dry etching is used to etch and define the nanoarray structures on top of an InGaP window layer of the GaAs solar cells. The inverted-cone-shaped nanoholes with a surface diameter of about 50 nm are formed on the top surface of the solar cells after the AAO mask removal. Photovoltaic and optical characteristics of the GaAs solar cells with and without the nanohole arrays are investigated. The reflectance of the AAO nanopatterned samples is lower than that of the planar GaAs solar cell in the measured range. The short-circuit current density increased up to 11.63% and the conversion efficiency improved from 10.53 to 11.57% under 1-sun AM 1.5 G conditions by using the nanohole arrays. Dependence of the efficiency enhancement on the etching depth of the nanohole arrays is also investigated. These results show that the nanohole arrays fabricated with an AAO technique may be employed to improve the light absorption and, in turn, the conversion efficiency of the GaAs solar cell.

  18. A novel nano-structured GaAs solar cell

    Science.gov (United States)

    Liang, Dong; Gu, Anjia; Huo, Yijie; Yan, Jingzhou; Li, Shuang; Garnett, Erik; Pickett, Evan; Kang, Yangsen; Tan, Meiyueh; Cerruto, Antonio Xavier; Zhu, Jia; Hsu, Ching-Mei; Yao, Yan; Riaziat, Majid; Cui, Yi; Harris, James S.

    2011-03-01

    In this presentation, we will demonstrate a novel solar cell with nano-structured dense arrays of single crystal GaAs conformally grown on nanopillar templates with wafer-scale uniformity. The template is prepared via plasma enhanced etching with a monolayer of Si O2 nanospheres as a mask followed by wet chemical etching. The GaAs p-n junction with an AlGaAs passivation window layer is grown via metal-organic chemical vapor deposition (MOCVD). The rectangular shape of the nano single crystal GaAs reveals anisotropic lateral growth rates of GaAs along (011) and (01 1 directions, which can be engineered by tuning the As H3 flow and temperature during growth. Optical absorption measurements show the outstanding light trapping properties of the nano-structured cell, which agree with the simulation results. I-V characteristics show an efficiency of 1.67% for the nano GaAs solar cell, which is 15% higher than its planar control cell with the same thickness of 200nm. The efficiency is the highest among all the large area GaAs nanowire core-shell solar cells reported in literature by 2010.

  19. MOCVD growth and ultrafast photoluminescence in GaAs and InAs freestanding quantum whiskers: A review

    Science.gov (United States)

    Viswanath, A. Kasi; Hiruma, K.; Yazawa, M.; Ogawa, K.; Katsuyama, T.

    1994-02-01

    Nanometer-size quantum whiskers of InAs and GaAs were fabricated by low-pressure MOCVD. Time-integrated and time-resolved photoluminescence of GaAs wires of diameters 200, 100, 70, and 50 nm were studied. The temperature dependence of PL peak energy was found to follow the same variation as the bandgap of GaAs, and Varshni's theory was used to explain the temperature dependence. The main channel of radiative recombination was found to be due to free excitons. The nonuniformity in diameter and lattice phonon interactions were considered to understand the origin of the linewidth. From the time-resolved PL, the surface recombination lifetimes were measured directly. Surface recombination velocities were evaluated and were correlated to wire diameter. The quantum-size-dependent spatial part of the electronic wave function was thought to be responsible for the variation of surface recombination velocity with diameter. Surface treatment with sulphur reduced the surface depletion layer, as evidenced from the time-resolved and time-integrated spectra. The carrier lifetime was in picosecond time scales at 7 K and increased with temperature, thus confirming the quantum confinement effects. The polarization experiments revealed the one-dimensional nature of quantum whiskers.

  20. Imaging performance of a Timepix detector based on semi-insulating GaAs

    Science.gov (United States)

    Zaťko, B.; Zápražný, Z.; Jakůbek, J.; Šagátová, A.; Boháček, P.; Sekáčová, M.; Korytár, D.; Nečas, V.; Žemlička, J.; Mora, Y.; Pichotka, M.

    2018-01-01

    This work focused on a Timepix chip [1] coupled with a bulk semi-insulating GaAs sensor. The sensor consisted of a matrix of 256 × 256 pixels with a pitch of 55 μm bump-bonded to a Timepix ASIC. The sensor was processed on a 350 μm-thick SI GaAs wafer. We carried out detector adjustment to optimize its performance. This included threshold equalization with setting up parameters of the Timepix chip, such as Ikrum, Pream, Vfbk, and so on. The energy calibration of the GaAs Timepix detector was realized using a 241Am radioisotope in two Timepix detector modes: time-over-threshold and threshold scan. An energy resolution of 4.4 keV in FWHM (Full Width at Half Maximum) was observed for 59.5 keV γ-photons using threshold scan mode. The X-ray imaging quality of the GaAs Timepix detector was tested using various samples irradiated by an X-ray source with a focal spot size smaller than 8 μm and accelerating voltage up to 80 kV. A 700 μm × 700 μm gold testing object (X-500-200-16Au with Siemens star) fabricated with high precision was used for the spatial resolution testing at different values of X-ray image magnification (up to 45). The measured spatial resolution of our X-ray imaging system was about 4 μm.

  1. Interface dynamics and crystal phase switching in GaAs nanowires

    Science.gov (United States)

    Jacobsson, Daniel; Panciera, Federico; Tersoff, Jerry; Reuter, Mark C.; Lehmann, Sebastian; Hofmann, Stephan; Dick, Kimberly A.; Ross, Frances M.

    2016-03-01

    Controlled formation of non-equilibrium crystal structures is one of the most important challenges in crystal growth. Catalytically grown nanowires are ideal systems for studying the fundamental physics of phase selection, and could lead to new electronic applications based on the engineering of crystal phases. Here we image gallium arsenide (GaAs) nanowires during growth as they switch between phases as a result of varying growth conditions. We find clear differences between the growth dynamics of the phases, including differences in interface morphology, step flow and catalyst geometry. We explain these differences, and the phase selection, using a model that relates the catalyst volume, the contact angle at the trijunction (the point at which solid, liquid and vapour meet) and the nucleation site of each new layer of GaAs. This model allows us to predict the conditions under which each phase should be observed, and use these predictions to design GaAs heterostructures. These results could apply to phase selection in other nanowire systems.

  2. Structural and morphological TEM characterization of GaAs based nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Soda, Marcello

    2012-02-03

    The question of a structural and morphological characterization of GaAs based nanowires is the research interest of this thesis. For this purpose standard and analytical transmission electron microscopy techniques were employed. New investigation methodologies are introduced in order to obtain a reliable interpretation of the results. The principal motivation on developing a new investigation method is the necessity to relate the results of crystal structure and morphology characterizations to microscopic and NW-specific parameters and not to macroscopic and general growth parameters. This allows a reliable comparison of NW characteristics and enhances the comprehension of their growth mechanism.The analysis of the results on crystal structure investigations, assuming this new perspective, delivers the fundamental finding that the axial growth of Au-assisted GaAs NWs can change in a pseudo Ga-assisted growth due to a non steady-state regime of the Ga accumulation process in the liquid droplet. The attempt to associate the observed crystal structures to one of these two growth modes reveals that zinc blende segments are most probably generated when a pseudo Ga-assisted growth occurs. This experimental evidence is in accordance with investigations developed by Glas et al. and Spirkoska et al. and with the current understanding of the NW growth mechanism and unifies the interpretation of catalytic growth of GaAs NWs. A Mn doped GaAs shell deposited at low temperature on core GaAs NWs is characterized for the first time. The growth is found to be epitaxial and to confer the quality of the core crystal to the shell crystal. As a consequence a high stacking fault density of the core NW limits the temperature of the shell growth due to the formation of clusters. Cross sections of (Ga,Mn)As shells are investigated. Simple kinetic and thermodynamical considerations lead to the conclusion of morphological instability of the low temperature radial growth. Analytical

  3. Nanostructured GaAs solar cells via metal-assisted chemical etching of emitter layers.

    Science.gov (United States)

    Song, Yunwon; Choi, Keorock; Jun, Dong-Hwan; Oh, Jungwoo

    2017-10-02

    GaAs solar cells with nanostructured emitter layers were fabricated via metal-assisted chemical etching. Au nanoparticles produced via thermal treatment of Au thin films were used as etch catalysts to texture an emitter surface with nanohole structures. Epi-wafers with emitter layers 0.5, 1.0, and 1.5 um in thickness were directly textured and a window layer removal process was performed before metal catalyst deposition. A nanohole-textured emitter layer provides effective light trapping capabilities, reducing the surface reflection of a textured solar cell by 11.0%. However, because the nanostructures have high surface area to volume ratios and large numbers of defects, various photovoltaic properties were diminished by high recombination losses. Thus, we have studied the application of nanohole structures to GaAs emitter solar cells and investigated the cells' antireflection and photovoltaic properties as a function of the nanohole structure and emitter thickness. Due to decreased surface reflection and improved shunt resistance, the solar cell efficiency increased from 4.25% for non-textured solar cells to 7.15% for solar cells textured for 5 min.

  4. Shallow Levels Characterization in Epitaxial GaAs by Acousto-Optic Reflectance Shallow Levels Characterization in Epitaxial GaAs by Acousto-Optic Reflectance

    Directory of Open Access Journals (Sweden)

    O. G. Ibarra-Manzano

    2012-02-01

    Full Text Available Optical spectra of light reflection are detected under an influence of ultrasonic wave (UWon a GaAs wafer. The differential spectrum is calculated as a difference between those taken under UW and without that influence on a sample. This acousto-optic differential reflectance(AODR spectrum contains some bands that represent the energetic levels of the shallow centers in a sample. A physical basis of this technique is related to a perturbation of local states by UW. Here, a method is developed for characterization of local states at the surfaces and interfaces in crystals and low-dimensional epitaxial structures based on microelectronics materials. A theoretical model is presented to explain AODR spectra. Also, experiments using epitaxial GaAs structures doped by Te were made. Finally, theoretical and experimental results show that acousto-optic reflectance is an effective tool for characterization of shallow trapping centers in epitaxial semiconductor structures.En este trabajo, utilizamos el espectro de la luz reflejada en una muestra de Arsenuro de Galio (GaAs bajo la influencia de una onda ultrasónica. El diferencial espectral es calculado como una diferencia entre el espectro del material obtenido bajo la influencia del ultrasonido y aquél obtenido sin dicha influencia. Este diferencial de reflectancia espectral acusto-óptico (AODR contiene algunas bandas que representan los niveles energéticos de los centros en la superficie de la muestra. Esta técnica está basada en la perturbación de los estados locales generada por el ultrasonido. Particularmente, este trabajo presenta un método para caracterizar los estados locales en la superficie y las interfaces en los cristales, así como estructuras epiteliales de baja dimensión basadas en materiales semiconductores. Para ello, se presenta un modelo teórico para explicar dicho espectro de reflectancia diferencial (AODR. También se realizaron experimentos con estructuras de GaAs epitelial

  5. Polarized recombination of acoustically transported carriers in GaAs nanowires

    Science.gov (United States)

    Möller, Michael; Hernández-Mínguez, Alberto; Breuer, Steffen; Pfüller, Carsten; Brandt, Oliver; de Lima, Mauricio M.; Cantarero, Andrés; Geelhaar, Lutz; Riechert, Henning; Santos, Paulo V.

    2012-05-01

    The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoexcited electrons and holes in GaAs nanowires deposited on a SAW delay line on a LiNbO3 crystal. The carriers generated in the nanowire by a focused light spot are acoustically transferred to a second location where they recombine. We show that the recombination of the transported carriers occurs in a zinc blende section on top of the predominant wurtzite nanowire. This allows contactless control of the linear polarized emission by SAWs which is governed by the crystal structure. Additional polarization-resolved photoluminescence measurements were performed to investigate spin conservation during transport.

  6. Layer-resolved photoelectron diffraction from Si(001) and GaAs(001)

    Czech Academy of Sciences Publication Activity Database

    Bartoš, Igor; Romanyuk, Olexandr

    2012-01-01

    Roč. 185, č. 11 (2012), s. 512-517 ISSN 0368-2048 R&D Projects: GA ČR GAP204/10/0035 Grant - others:AV ČR(CZ) M100101201; AV ČR(CZ) Praemium Academiae; Murata Science Foundation(JP) 00295 Institutional research plan: CEZ:AV0Z10100521 Keywords : photoelectron diffraction * GaAs(001) * Si(001) * semiconductor surfaces * electron attenuation length Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.706, year: 2012 http://www.sciencedirect.com/science/article/pii/S0368204812001326

  7. Bulk GaAs as a solar neutrino detector

    Energy Technology Data Exchange (ETDEWEB)

    Gavrin, V.N.; Kozlova, Y.P. E-mail: gavrin@adonis.iasnet.ru; Veretenkin, E.P.; Bowles, T.J.; Eremin, V.K.; Verbitskaya, E.M.; Markov, A.V.; Polyakov, A.Y.; Koshelev, O.G.; Morozova, V.F

    2001-06-21

    A GaAs detector may offer the unique possibility to independently study neutrino properties and solar physics. The ability to measure the flux of p-p, {sup 7}Be and pep solar neutrinos would allow one to approach a solution of the 'solar neutrino problem', i.e. the explanation of the significant deficit in observed capture rate of solar neutrinos. A large GaAs solar neutrino detector would allow to measure parameters for possible Mikheyev-Smirnov-Wolfenstein neutrino oscillations with unprecedented precision. A model-independent test for sterile neutrinos is also possible. A direct measurement of the temperature profile of the Sun center appears feasible. A GaAs detector would also provide the ability to observe neutral current interactions in addition to addressing a wide range of other interesting physics. In order to measure the p-p, pep and {sup 7}Be neutrinos a detector is required with low threshold (< 350 keV), good energy resolution (< 2 keV) and low background. A GaAs solid-state detector could meet the listed requirements. A large GaAs detector would be composed of approximately 40,000 intrinsic GaAs crystals, each weighting 3.2 kg. Such a detector would have a mass of 125 ton and would contain 60 ton of Ga occupying a volume of roughly 3 m on one side. Previous efforts by many groups have resulted in producing very small detectors with reasonably good resolution. However, it has thus far proved impossible to make large detectors with good resolution. Thus, a solar neutrino detector such as the one described above is obviously very ambitious, but the scientific motivation is sufficiently high that we have begun a research and development program with the goal of determining the technical feasibility of constructing large GaAs crystals with the requisite electronic properties to serve as particle detectors.

  8. A comprehensive study of cryogenic cooled millimeter-wave frequency multipliers based on GaAs Schottky-barrier varactors

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Rybalko, Oleksandr; Zhurbenko, Vitaliy

    2018-01-01

    The benefit of cryogenic cooling on the performance of millimeter-wave GaAs Schottky-barrier varactor-based frequency multipliers has been studied. For this purpose, a dedicated compact model of a GaAs Schottky-barrier varactor using a triple-anode diode stack has been developed for use with a co......The benefit of cryogenic cooling on the performance of millimeter-wave GaAs Schottky-barrier varactor-based frequency multipliers has been studied. For this purpose, a dedicated compact model of a GaAs Schottky-barrier varactor using a triple-anode diode stack has been developed for use...... with a commercial RF and microwave CAD tool. The model implements critical physical phenomena such as thermionic-field emission current transport at cryogenic temperatures, temperature dependent mobility, reverse breakdown, self-heating, and high-field velocity saturation effects. A parallel conduction model...... is employed in order to include the effect of barrier inhomogeneities which is known to cause deviation from the expected I--V characteristics at cryogenic temperatures. The developed model is shown to accurately fit the I--V --T dataset from 25 to 295 K measured on the varactor diode stack. Harmonic balance...

  9. 3-D GaAs radiation detectors

    CERN Document Server

    Meikle, A R; Ledingham, Kenneth W D; Marsh, J H; Mathieson, K; O'Shea, V; Smith, K M

    2002-01-01

    A novel type of GaAs radiation detector featuring a 3-D array of electrodes that penetrate through the detector bulk is described. The development of the technology to fabricate such a detector is presented along with electrical and radiation source tests. Simulations of the electrical characteristics are given for detectors of various dimensions. Laser drilling, wet chemical etching and metal evaporation were used to create a cell array of nine electrodes, each with a diameter of 60 mu m and a pitch of 210 mu m. Electrical measurements showed I-V characteristics with low leakage currents and high breakdown voltages. The forward and reverse I-V measurements showed asymmetrical characteristics, which are not seen in planar diodes. Spectra were obtained using alpha particle illumination. A charge collection efficiency of 50% and a S/N ratio of 3 : 1 were obtained. Simulations using the MEDICI software package were performed on cells with various dimensions and were comparable with experimental results. Simulati...

  10. 3-D GaAs radiation detectors

    International Nuclear Information System (INIS)

    Meikle, A.R.; Bates, R.L.; Ledingham, K.; Marsh, J.H.; Mathieson, K.; O'Shea, V.; Smith, K.M.

    2002-01-01

    A novel type of GaAs radiation detector featuring a 3-D array of electrodes that penetrate through the detector bulk is described. The development of the technology to fabricate such a detector is presented along with electrical and radiation source tests. Simulations of the electrical characteristics are given for detectors of various dimensions. Laser drilling, wet chemical etching and metal evaporation were used to create a cell array of nine electrodes, each with a diameter of 60 μm and a pitch of 210 μm. Electrical measurements showed I-V characteristics with low leakage currents and high breakdown voltages. The forward and reverse I-V measurements showed asymmetrical characteristics, which are not seen in planar diodes. Spectra were obtained using alpha particle illumination. A charge collection efficiency of 50% and a S/N ratio of 3 : 1 were obtained. Simulations using the MEDICI software package were performed on cells with various dimensions and were comparable with experimental results. Simulations of a nine-electrode cell with 10 μm electrodes with a 25 μm pitch were also performed. The I-V characteristics again showed a high breakdown voltage with a low leakage current but also showed a full depletion voltage of just 8 V

  11. Modeling of phase velocity and frequency spectrum of guided Lamb waves in piezoelectric-semiconductor multilayered structures made of AlAs and GaAs

    Science.gov (United States)

    Othmani, Cherif; Takali, Farid; Njeh, Anouar

    2017-11-01

    Modeling of guided Lamb waves propagation in piezoelectric-semiconductor multilayered structures made of AlAs and GaAs is evaluated in this paper. Here, the Legendre polynomial method is used to calculate dispersion curves, frequency spectrum and field distributions of guided Lamb waves propagation modes in AlAs, GaAs, AlAs/GaAs and AlAs/GaAs/AlAs-1/2/1 structures. In fact, formulations are given for open-circuit surface. Consequently, the polynomial method is numerically stable according to the total number of layers and the frequency range. This analysis is meaningful for the applications of the piezoelectric-semiconductor multilayered structures made of AlAs and GaAs such as in novel acoustic devices.

  12. Stacking InAs quantum dots over ErAs semimetal nanoparticles on GaAs (0 0 1) using molecular beam epitaxy

    Science.gov (United States)

    Zhang, Yuanchang; Eyink, Kurt G.; Grazulis, Lawrence; Hill, Madelyn; Peoples, Joseph; Mahalingam, Krishnamurthy

    2017-11-01

    Hybrid nanostructures are known to elicit an enhanced optical response. We study the directed alignment of ErAs metal nanoparticle (NP) and InAs quantum dot (QD) using molecular beam eptaxy (MBE) in a GaAs matrix. Due to high surface free energy caused by the crystal structure difference, overgrowth of an ErAs NP with GaAs forms a depression that condenses subsequent InAs adatoms to form an inverted QD self-aligned to the underlying ErAs NP. The ErAs NP growth, GaAs overgrowth, and InAs QD deposition were carefully controlled and studied with transmission electron microscopy (TEM) and atomic force microscopy (AFM) to investigate their effects on the QD-NP alignment.

  13. Homolysis versus β-hydride elimination in the decomposition of trialkylgallium on GaAs(100)

    Science.gov (United States)

    Wong, K. C.; McBurnett, B. G.; Culp, R. D.; Cowley, A. H.; Ekerdt, J. G.

    1998-10-01

    The decomposition of various surface alkyl groups on GaAs(100), which were generated by dissociative adsorption of the corresponding trialkylgallium precursors R 3Ga (R=Me, Et, Et- d5, nPr , iPr , nBu and tBu ), was studied by temperature programmed desorption. Two elimination pathways were observed, homolysis and β-hydride elimination. The former reaction results in the formation of alkyl radicals and the latter gives alkene and H 2 as products. On GaAs(100), both reactions are observed in the decomposition of all surface alkyl groups, except for methyl that reacts by homolysis. For each surface alkyl group, homolysis always occurs at slightly lower temperature than β-hydride elimination. Experiments with perdeuterated triethylgallium reveal that surface Et groups do not undergo coupling with coadsorbed deuterium on the surface to form ethane, and that ethane forms in subsequent wall reactions that involve Et radicals. The activation energy Ea for homolysis followed the trend Me>Et> nPr> nBu> iPr> tBu , which reflects the strength of alkyl-surface bonds as well as the increased stability of the alkyl radical. The Ea for β-hydride elimination follows closely the Ea for homolysis and exhibits similar behavior in terms of magnitude and trend, i.e. Et> nPr> nBu≈ iPr> tBu , suggesting that breaking the alkyl-surface bond contributes to the activation energy for both homolysis and β-hydride elimination reactions. The alkyl-surface bond energy (Δ Hh) and the heat of reaction for β-hydride elimination (Δ Hβ) for all surface alkyls are calculated from the desorption temperatures of their products.

  14. Growth and electronic properties of two-dimensional systems on (110) oriented GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Fischer, F.

    2005-07-01

    As the only non-polar plane the (110) surface has a unique role in GaAs. Together with Silicon as a dopant it is an important substrate orientation for the growth of n-type or p-type heterostructures. As a consequence, this thesis will concentrate on growth and research on that surface. In the course of this work we were able to realize two-dimensional electron systems with the highest mobilities reported so far on this orientation. Therefore, we review the necessary growth conditions and the accompanying molecular process. The two-dimensional electron systems allowed the study of a new, intriguing transport anisotropy not explained by current theory. Moreover, we were the first growing a two-dimensional hole gas on (110) GaAs with Si as dopant. For this purpose we invented a new growth modulation technique necessary to retrieve high mobility systems. In addition, we discovered and studied the metal-insulator transition in thin bulk p-type layers on (110) GaAs. Besides we investigated the activation process related to the conduction in the valence band and a parallelly conducting hopping band. The new two-dimensional hole gases revealed interesting physics. We studied the zero B-field spin splitting in these systems and compared it with the known theory. Furthermore, we investigated the anisotropy of the mobility. As opposed to the expectations we observed a strong persistent photoconductivity in our samples. Landau levels for two dimensional hole systems are non-linear and can show anticrossings. For the first time we were able to resolve anticrossings in a transport experiment and study the corresponding activation process. Finally, we compared these striking results with theoretical calculations. (orig.)

  15. Growth initiation processes for GaAs and AlGaAs in CBE

    CERN Document Server

    Hill, D

    2002-01-01

    'in-growth' reconstruction to stabilise. However unlike for TMGa, GaAs growth with TEGa proceeds by a non-self limiting growth mode and TEGa rapidly dissociates. The result of this is that TEGa decomposes on top of other TEGa molecules, or their fragments and due to the high flux rate this leads to a 'stacking-up' of Ga on the surface. The presence of excess Ga provides a rapid increase of surface reflectance and then its subsequent decay as the excess Ga is incorporated by the increasing As content of the surface. The average growth rate during the transient period is equal to that of subsequent 'post-transient' period. However it is not certain as to whether the growth rate is constant throughout the transient period. The aim of this work was to investigate the nature of the transient period found in reflectance anisotropy (RA) measurements of high III:V BEP ratio growth of gallium arsenide (GaAs) and aluminium gallium arsenide (AIGaAs) by chemical beam epitaxy (CBE). Growth at substrate temperatures betwee...

  16. Potential controlled stripping of an amorphous As layer on GaAs(001) in an electrolyte: An in situ x-ray scattering study

    DEFF Research Database (Denmark)

    Scherb, G.; Kazimirov, A.; Zegenhagen, J.

    1997-01-01

    We demonstrate that an amorphous As layer deposited as protection on a GaAs(001) surface frown by molecular beam epitaxy can be removed via reductive etching in an electrolytical cell at sufficiently negative electrode potentials. Employing a specially constructed electrochemical cell filled with...

  17. Comparing Multiple Evapotranspiration-calculating Methods, Including Eddy Covariance and Surface Renewal, Using Empirical Measurements from Alfalfa Fields in the Sacramento-San Joaquin River Delta

    Science.gov (United States)

    Clay, J.; Kent, E. R.; Leinfelder-Miles, M.; Lambert, J. J.; Little, C.; Paw U, K. T.; Snyder, R. L.

    2016-12-01

    Eddy covariance and surface renewal measurements were used to estimate evapotranspiration (ET) over a variety of crop fields in the Sacramento-San Joaquin River Delta during the 2016 growing season. However, comparing and evaluating multiple measurement systems and methods for determining ET was focused upon at a single alfalfa site. The eddy covariance systems included two systems for direct measurement of latent heat flux: one using a separate sonic anemometer and an open path infrared gas analyzer and another using a combined system (Campbell Scientific IRGASON). For these methods, eddy covariance was used with measurements from the Campbell Scientific CSAT3, the LI-COR 7500a, the Campbell Scientific IRGASON, and an additional R.M. Young sonic anemometer. In addition to those direct measures, the surface renewal approach included several energy balance residual methods in which net radiation, ground heat flux, and sensible heat flux (H) were measured. H was measured using several systems and different methods, including using multiple fast-response thermocouple measurements and using the temperatures measured by the sonic anemometers. The energy available for ET was then calculated as the residual of the surface energy balance equation. Differences in ET values were analyzed between the eddy covariance and surface renewal methods, using the IRGASON-derived values of ET as the standard for accuracy.

  18. 46 CFR Sec. 7 - Operation under current GAA/MSTS Southeast Asia Program.

    Science.gov (United States)

    2010-10-01

    ... 46 Shipping 8 2010-10-01 2010-10-01 false Operation under current GAA/MSTS Southeast Asia Program... AUTHORITY VOYAGE DATA Sec. 7 Operation under current GAA/MSTS Southeast Asia Program. In order to adapt the provisions of NSA Order 35 (OPR-2) to the particular circumstances of the present GAA/MSTS Southeast Asia...

  19. Effects of guanidinoacetic acid(gaa supplementation in rats with chronic renal failure(crf

    Directory of Open Access Journals (Sweden)

    Yoshiharu Tsubakihara

    2012-06-01

    *; p<0.05 vs Sham $; p<0.05 vs GAA 0In conclusion, we demonstrated a deficiency of GAA and CRT, and muscle weekness in CRF rats. However, oral GAA supplementation could recover muscle content of CRT and muscle capabilities in these rats.

  20. Optoelectronic simulation of GaAs solar cells with angularly selective filters

    International Nuclear Information System (INIS)

    Kraus, Tobias; Höhn, Oliver; Hauser, Hubert; Bläsi, Benedikt

    2014-01-01

    We discuss the influence of angularly selective filters on thin film gallium arsenide solar cells. For this reason, the detailed balance model was refined to fit our needs with respect to Auger recombination, reflection, transmission, and realistic absorption. For calculating real systems, an approach was made to include optical effects of angularly selective filters into electron-hole dynamic equations implemented in PC1D, a one dimensional solar cell calculation tool. With this approach, we find a relative V oc increase of 5% for an idealized 100 nm GaAs cell, including Auger recombination

  1. Intrinsic spin lifetimes in GaAs (110) quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Mueller, Georg; Roemer, Michael; Huebner, Jens; Oestreich, Michael [Institut fuer Festkoerperphysik, Gottfried Wilhelm Leibniz Universitaet Hannover, Hannover (Germany); Schuh, Dieter; Wegscheider, Werner [Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg (Germany)

    2009-07-01

    GaAs(110) quantum wells attract great attention due to the long spin lifetime for electron spins along the growth axis and are, therefore, of interest for future spin based optoelectronic devices. At low temperatures, optical injection of a finite spin polarization yields strongly enhanced spin dephasing due to the Bir Aronov Pikus mechanism that arises from the exchange interaction between electrons and holes. Thus, the intrinsic spin lifetime in GaAs(110) quantum wells has been unknown. In this work, the non-demolition technique of spin noise spectroscopy, which only relies on statistical spin fluctuations, is applied to GaAs(110) quantum wells in order to measure the intrinsic spin lifetimes. Furthermore, the Brownian motion of the electrons modifies the linewidth of the measured spin noise spectra due to time of flight broadening. This effect uniquely allows to study electronic motion at thermal equilibrium.

  2. GaAs strip detectors: the Australian production program

    International Nuclear Information System (INIS)

    Butcher, K.S.A.; Alexiev, D.

    1995-01-01

    The Australian High Energy Physics consortium (composed of the University of Melbourne, the University of Sydney and ANSTO) has been investigating the possibility of producing a large area wheel of SI GaAs detectors for the ATLAS detector array. To help assess the extent of Australia's role in this venture a few SI GaAs microstrip detectors are to be manufactured under contract by the CSIRO division of Radiophysics GaAs IC Prototyping Facility. The planned production of the devices is discussed. First, the reasons for producing the detectors here in Australia are examined, then some basic characteristics of the material are considered, and finally details are provided of the design used for the manufacture of the devices. Two sets of detectors will be produced using the standard Glasgow production recipe; SIGaAs and GaN. The Glasgow mask set is being used as a benchmark against which to compare the Australian devices

  3. Status of fully integrated GaAs particle detectors

    International Nuclear Information System (INIS)

    Braunschweig, W.; Breibach, J.; Kubicki, Th.; Luebelsmeyer, K.; Maesing, Th.; Rente, C.; Roeper, Ch.; Siemes, A.

    1999-01-01

    GaAs strip detectors are of interest because of their radiation hardness at room temperature and the high absorption coefficient of GaAs for x-rays. The detectors currently under development will be used in the VLQ-experiment at the H1 experiment at the HERA collider. This will be the first high energy physics experiment where GaAs detectors will be used. The detectors have a sensitive area of 5 x 4 cm with a pitch of 62 μ m. Due to the high density of channels the biasing resistors and coupling capacitors are integrated. For the resistors a resistive layer made of Cermet is used. The properties of the first fully integrated strip detector are presented

  4. Exploration of Gas Discharges with GaAs, GaP and ZnSe Electrodes Under Atmospheric Pressure

    Science.gov (United States)

    Kurt, H. Hilal

    2018-03-01

    This work reports on the electrical and optical characterization of the atmospheric pressure glow discharge regimes for different semiconductor electrodes made of GaAs, GaP and ZnSe. The discharge cell is driven by DC feeding voltages at a wide pressure range of 0.66-120 kPa in argon and air media for different interelectrode gaps. The discharge phenomena including different stages of discharges such as glow and Townsend breakdown have been examined. In addition, the infrared sensitivities of the semiconducting materials are evaluated in the micro-discharge cell and discharge light emission measurements have been performed. The qualities of the semiconducting electrode samples can be determined by seeking the homogeneity of the discharge light emission for the optoelectronic device applications. Operation of optical devices under atmospheric pressures gives certain advantages for manufacturing of the devices including the material processing and surface treatment procedures. Besides, finite element analyses of the overall experimental system have been performed for the abovementioned semiconductors. The electron densities and potential patterns have been determined on the discharge cell plane between the electrodes. The findings have proven that the electron densities along the plasma cell depend on both the semiconductor type and plasma parameters.

  5. Peeled film GaAs solar cells for space power

    Science.gov (United States)

    Wilt, D. M.; Deangelo, F. L.; Thomas, R. D.; Bailey, S. G.; Landis, G. A.; Brinker, D. J.; Fatemi, N. S.

    1990-01-01

    Gallium arsenide (GaAs) peeled film solar cells were fabricated, by Organo-Metallic Vapor Phase Epitaxy (OMVPE), incorporating an aluminum arsenide (AlAs) parting layer between the device structure and the GaAs substrate. This layer was selectively removed by etching in dilute hydrofloric (HF) acid to release the epitaxial film. Test devices exhibit high series resistance due to insufficient back contact area. A new design is presented which uses a coverglass superstrate for structural support and incorporates a coplanar back contact design. Devices based on this design should have a specific power approaching 700 W/Kg.

  6. Scanning microwave microscopy applied to semiconducting GaAs structures

    Science.gov (United States)

    Buchter, Arne; Hoffmann, Johannes; Delvallée, Alexandra; Brinciotti, Enrico; Hapiuk, Dimitri; Licitra, Christophe; Louarn, Kevin; Arnoult, Alexandre; Almuneau, Guilhem; Piquemal, François; Zeier, Markus; Kienberger, Ferry

    2018-02-01

    A calibration algorithm based on one-port vector network analyzer (VNA) calibration for scanning microwave microscopes (SMMs) is presented and used to extract quantitative carrier densities from a semiconducting n-doped GaAs multilayer sample. This robust and versatile algorithm is instrument and frequency independent, as we demonstrate by analyzing experimental data from two different, cantilever- and tuning fork-based, microscope setups operating in a wide frequency range up to 27.5 GHz. To benchmark the SMM results, comparison with secondary ion mass spectrometry is undertaken. Furthermore, we show SMM data on a GaAs p-n junction distinguishing p- and n-doped layers.

  7. Peeled film GaAs solar cells for space power

    Science.gov (United States)

    Wilt, D. M.; Deangelo, F. L.; Thomas, R. D.; Bailey, S. G.; Landis, G. A.; Brinker, D. J.; Fatemi, N. S.

    1990-05-01

    Gallium arsenide (GaAs) peeled film solar cells were fabricated, by Organo-Metallic Vapor Phase Epitaxy (OMVPE), incorporating an aluminum arsenide (AlAs) parting layer between the device structure and the GaAs substrate. This layer was selectively removed by etching in dilute hydrofloric (HF) acid to release the epitaxial film. Test devices exhibit high series resistance due to insufficient back contact area. A new design is presented which uses a coverglass superstrate for structural support and incorporates a coplanar back contact design. Devices based on this design should have a specific power approaching 700 W/Kg.

  8. Molecular beam epitaxy of AlSb on GaAs and GaSb on AlSb films

    International Nuclear Information System (INIS)

    Gotoh, H.; Sasamoto, K.; Kuroda, S.; Kimata, M.

    1983-01-01

    Single crystalline AlSb films are successfully grown, by MBE on GaAs substrates at temperatures higher than 400 0 C. The surface gives a C(2 x 6) structure under Sb stabilized conditions. Undoped AlSb is p-type with resistivities of 10 2 to 10 3 Ωcm. Then, GaSb films are grown on AlSb/GaAs. It can be seen, from RHEED observation that the interface between AlSb and GaSb is very smooth, and the layer growth continues at the interface. Fabricating that structure improves the properties of GaSb in comparison with those of GaSb directly grown on GaAs by the relaxation of lattice mismatch. (author)

  9. Fabrication of nanostructures on Si(1 0 0) and GaAs(1 0 0) by local anodic oxidation

    International Nuclear Information System (INIS)

    Cervenka, Jiri; Kalousek, Radek; Bartosik, Miroslav; Skoda, David; Tomanec, Ondrej; Sikola, Tomas

    2006-01-01

    Atomic force microscopes have become useful tools not only for observing surface morphology and nanostructure topography but also for fabrication of various nanostructures itself. In this paper, the application of AFM for fabrication of nanostructures by local anodic oxidation (LAO) of Si(1 0 0) and GaAs(1 0 0) surfaces is presented. A special attention is paid to finding relations between the size of oxide nanolines (height and half-width) and operational parameters as tip-sample voltage and tip writing speed. It was demonstrated that the formation of silicon oxide lines obeys the Cabrera-Mott theory, i.e. the height of the lines grow, linearly with tip-sample voltage and is inversely proportional to logarithm of tip writing speed. As for GaAs substrates, the oxide line height grows linearly with tip-sample voltage as well but LAO exhibits a certain deviation from this theory. It is shown that the selective chemical etching of Si or GaAs ultrathin films processed by LAO makes it possible to use these films as nanolithographic masks for further nanotechnologies, e.g. fabrication of metallic nanostructures by ion-beam bombardment. The ability to control LAO and tip motion can be utilized in fabrication of complex nanostructures finding their applications in nanoelectronic devices, nanophotonics and other high-tech areas

  10. Rapid capless annealing of28Si,64Zn, and9Be implants in GaAs

    Science.gov (United States)

    Liu, S. G.; Narayan, S. Y.

    1984-11-01

    We report the use of tungsten-halogen lamps for rapid (-10 s) thermal annealing of ion-implanted (100) GaAs under AsH3/Ar and N2 atmospheres. Annealing under flowing AsH3/Ar was carried out without wafer encapsulation. Rapid capless annealing activated implants in GaAs with good mobility and surface morphology. Typical mobilities were 3700 4500 cm2/V-s for n-layers with about 2×1017cm-3 carrier concentration and 50 150 cm2/v-s for 0.1 5xl019 cm-3 doped p-layers. Rapid thermal annealing was performed in a vertical quartz tube where different gases (N2, AsH3/H2, AsH3/Ar) can be introduced. Samples were encapsulated with SiO when N2 was used. Tungsten-halogen lamps of 600 or 1000 W were utilized for annealing GaAs wafers ranging from 1 to 10 cm2 in area and 0.025 to 0.040 cm in thickness. The transient temperature at the wafer position was monitored using a fine thermocouple. We carried out experiments for energies of 30 to 200 keV, doses of 2×1012 to 1×1015 cm-2, and peak temperatures ranging from 600 to 1000‡C. Most results quoted are in the 700 to 870‡C temperature range. Data on implant conditions, optimum anneal conditions, electrical characteristics, carrier concentration profiles, and atomic profiles of the implanted layers are described.

  11. A polarized photoluminescence study of strained layer GaAs photocathodes

    International Nuclear Information System (INIS)

    Mair, R.A.

    1996-07-01

    Photoluminescence measurements have been made on a set of epitaxially grown strained GaAs photocathode structures. The photocathodes are designed to exhibit a strain-induced enhancement of the electron spin polarization obtainable by optical pumping with circularly polarized radiation of near band gap energy. For the case of non-strained GaAs, the degree of spin polarization is limited to 50% by crystal symmetry. Under an appropriate uniaxial compression or tension, however, the valence band structure near the gap minimum is modified such that a spin polarization of 100% is theoretically possible. A total of nine samples with biaxial compressive strains ranging from zero to ∼0.8% are studied. X-ray diffraction analysis, utilizing Bragg reflections, is used to determine the crystal lattice structure of the samples. Luminescence spectra and luminescence circular polarization data are obtained at room temperature, ∼78 K and ∼12 K. The degree of luminescence circular polarization is used as a relative measure of the photo-excited electron spin polarization. The room temperature luminescence circular polarization data is compared with the measured electron spin polarization when the samples are used as electron photo-emitters with a negative electron affinity surface preparation. The luminescence data is also analyzed in conjunction with the crystal structure data with the goal of understanding the strain dependent valence band structure, optical pumping characteristics and spin depolarization mechanisms of the photocathode structures. A simple model is used to describe the luminescence data, obtained for the set of samples. Within the assumptions of the model, the deformation potentials a, b and d for GaAs are determined. The measured values are a = -10.16±.21 eV, b = -2.00±.05 eV and d = -4.87±.29 eV. Good agreement with published values of the deformation potentials provides support for the model used to describe the data

  12. Radiation effects in pigtailed GaAs and GaA1As LEDs

    International Nuclear Information System (INIS)

    Barnes, C.E.

    1981-06-01

    Permanent and transient radiation effects have been studied in Plessey pigtailed, high radiance GaAs and GaAlAs LEDs using neutron, gamma ray and X-ray sources. The radiation-induced source of degradation in these devices was determined by also examining both bare, unpigtailed LEDs and separate samples of the Corning fibers used as pigtails. No transient effects were observed in the unpigtailed LEDs during either pulsed neutron or X-ray exposure. In contrast, the Corning doped silica fibers exhibited strong transient attenuation following pulsed X-ray bombardment. Permanent neutron damage in these pigtailed LEDs consisted essentially of light output degradation in the LED itself. Permanent gamma ray effects due to a Co-60 irradiation of 1 megarad were restricted to a small increase in attenuation in the fiber. The two primary radiation effects were then transient attenuation in the fiber pigtail and permanent neutron-induced degradation of the LED

  13. Congruent evaporation temperature of GaAs(001) controlled by As flux

    International Nuclear Information System (INIS)

    Zhou, Z. Y.; Zheng, C. X.; Tang, W. X.; Jesson, D. E.; Tersoff, J.

    2010-01-01

    The congruent evaporation temperature T c is a fundamental surface characteristic of GaAs and similar compounds. Above T c the rate of As evaporation exceeds that of Ga during Langmuir (free) evaporation into a vacuum. However, during molecular beam epitaxy (MBE) there is generally an external As flux F incident on the surface. Here we show that this flux directly controls T c . We introduce a sensitive approach to measure T c based on Ga droplet stability, and determine the dependence of T c on F. This dependence is explained by a simple model for evaporation in the presence of external flux. The capability of manipulating T c via changing F offers a means of controlling congruent evaporation with relevance to MBE, surface preparation methods, and droplet epitaxy.

  14. Real-time observation of FIB-created dots and ripples on GaAs

    International Nuclear Information System (INIS)

    Rose, F; Fujita, H; Kawakatsu, H

    2008-01-01

    We report a phenomenological study of Ga dots and ripples created by a focused ion beam (FIB) on the GaAs(001) surface. Real-time observation of dot diffusion and ripple formation was made possible by recording FIB movies. In the case of FIB irradiation with a 40 nA current of Ga + ions accelerated under 40 kV with an incidence angle of θ = 30 0 , increasing ion dose gives rise to three different regimes. In Regime 1, dots with lateral sizes in the range 50-460 nm are formed. Dots diffuse under continuous sputtering. In Regime 2, dots self-assemble into Bradley and Harper (BH) type ripples with a pseudo-period of λ = 1150 ± 25 nm. In Regime 3, ripples are eroded and the surface topology evolves into microplanes. In the case of normal incidence, FIB sputtering leads only to the formation of dots, without surface rippling

  15. Importance of including small-scale tile drain discharge in the calibration of a coupled groundwater-surface water catchment model

    DEFF Research Database (Denmark)

    Hansen, Anne Lausten; Refsgaard, Jens Christian; Christensen, Britt Stenhøj Baun

    2013-01-01

    the catchment. In this study, a coupled groundwater-surface water model based on the MIKE SHE code was developed for the 4.7 km2 Lillebæk catchment in Denmark, where tile drain flow is a major contributor to the stream discharge. The catchment model was calibrated in several steps by incrementally including...... the observation data into the calibration to see the effect on model performance of including diverse data types, especially tile drain discharge. For the Lillebæk catchment, measurements of hydraulic head, daily stream discharge, and daily tile drain discharge from five small (1–4 ha) drainage areas exist....... The results showed that including tile drain data in the calibration of the catchment model improved its general performance for hydraulic heads and stream discharges. However, the model failed to correctly describe the local-scale dynamics of the tile drain discharges, and, furthermore, including the drain...

  16. Gallium arsenide (GaAs) island growth under SiO(2) nanodisks patterned on GaAs substrates.

    Science.gov (United States)

    Tjahjana, Liliana; Wang, Benzhong; Tanoto, Hendrix; Chua, Soo-Jin; Yoon, Soon Fatt

    2010-05-14

    We report a growth phenomenon where uniform gallium arsenide (GaAs) islands were found to grow underneath an ordered array of SiO(2) nanodisks on a GaAs(100) substrate. Each island eventually grows into a pyramidal shape resulting in the toppling of the supported SiO(2) nanodisk. This phenomenon occurred consistently for each nanodisk across a large patterned area of approximately 50 x 50 microm(2) (with nanodisks of 210 nm diameter and 280 nm spacing). The growth mechanism is attributed to a combination of 'catalytic' growth and facet formation.

  17. Advanced digital modulation: Communication techniques and monolithic GaAs technology

    Science.gov (United States)

    Wilson, S. G.; Oliver, J. D., Jr.; Kot, R. C.; Richards, C. R.

    1983-01-01

    Communications theory and practice are merged with state-of-the-art technology in IC fabrication, especially monolithic GaAs technology, to examine the general feasibility of a number of advanced technology digital transmission systems. Satellite-channel models with (1) superior throughput, perhaps 2 Gbps; (2) attractive weight and cost; and (3) high RF power and spectrum efficiency are discussed. Transmission techniques possessing reasonably simple architectures capable of monolithic fabrication at high speeds were surveyed. This included a review of amplitude/phase shift keying (APSK) techniques and the continuous-phase-modulation (CPM) methods, of which MSK represents the simplest case.

  18. Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates

    Energy Technology Data Exchange (ETDEWEB)

    Galiev, G. B.; Pushkarev, S. S., E-mail: s-s-e-r-p@mail.ru [Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation); Buriakov, A. M.; Bilyk, V. R.; Mishina, E. D. [Moscow Technological University “MIREA” (Russian Federation); Klimov, E. A. [Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation); Vasil’evskii, I. S. [National Research Nuclear University “MEPhI” (Russian Federation); Maltsev, P. P. [Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation)

    2017-04-15

    The efficiency of the generation and detection of terahertz radiation in the range up to 3 THz by LT-GaAs films containing equidistant Si doping δ layers and grown by molecular beam epitaxy on GaAs (100) and (111)Ga substrates is studied by terahertz spectroscopy. Microstrip photoconductive antennas are fabricated on the film surface. Terahertz radiation is generated by exposure of the antenna gap to femtosecond optical laser pulses. It is shown that the intensity of terahertz radiation from the photoconductive antenna on LT-GaAs/GaAs (111)Ga is twice as large as the intensity of a similar antenna on LT-GaAs/GaAs(100) and the sensitivity of the antenna on LT-GaAs/GaAs (111)Ga as a terahertz-radiation detector exceeds that of the antenna on LT-GaAs/GaAs(100) by a factor of 1.4.

  19. Automatic construction of subject-specific human airway geometry including trifurcations based on a CT-segmented airway skeleton and surface

    Science.gov (United States)

    Miyawaki, Shinjiro; Tawhai, Merryn H.; Hoffman, Eric A.; Wenzel, Sally E.; Lin, Ching-Long

    2016-01-01

    We propose a method to construct three-dimensional airway geometric models based on airway skeletons, or centerlines (CLs). Given a CT-segmented airway skeleton and surface, the proposed CL-based method automatically constructs subject-specific models that contain anatomical information regarding branches, include bifurcations and trifurcations, and extend from the trachea to terminal bronchioles. The resulting model can be anatomically realistic with the assistance of an image-based surface; alternatively a model with an idealized skeleton and/or branch diameters is also possible. This method systematically identifies and classifies trifurcations to successfully construct the models, which also provides the number and type of trifurcations for the analysis of the airways from an anatomical point of view. We applied this method to 16 normal and 16 severe asthmatic subjects using their computed tomography images. The average distance between the surface of the model and the image-based surface was 11% of the average voxel size of the image. The four most frequent locations of trifurcations were the left upper division bronchus, left lower lobar bronchus, right upper lobar bronchus, and right intermediate bronchus. The proposed method automatically constructed accurate subject-specific three-dimensional airway geometric models that contain anatomical information regarding branches using airway skeleton, diameters, and image-based surface geometry. The proposed method can construct (i) geometry automatically for population-based studies, (ii) trifurcations to retain the original airway topology, (iii) geometry that can be used for automatic generation of computational fluid dynamics meshes, and (iv) geometry based only on a skeleton and diameters for idealized branches. PMID:27704229

  20. Selfsimilar and fractal analysis of n-type delta-doped quasiregular GaAs quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    García-Cervantes, H.; Rodríguez-Vargas, I. [Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calzada Solidaridad Esquina Con Paseo La Bufa S/N, 98060 Zacatecas, Zac. (Mexico)

    2014-05-15

    We study the electronic structure of n-type delta-doped quantum wells in GaAs in which the multiple well system is built according to the Fibonacci sequence. The building blocks A and B correspond to delta-doped wells with impurities densities n{sub 2DA} and n{sub 2DB}, and the same well width. The Thomas-Fermi approximation, the semi-empirical sp{sub 3}s* tight-binding model including spin, the Surface Green Function Matching method and the Transfer Matrix approach were implemented to obtain the confining potential, the electronic structure and the selfsimilarity of the spectrum. The fragmentation of the electronic spectra is observed whenever the building blocks A and B interact and it increases as the difference of impurities density between A and B increases as well. The wave function of the first sate of the fragmented bands presents critical characteristics, this is, it is not a localized state nor a extended one as well as it has selfsimilar features. So, the quasiregular characteristics are preserved irrespective of the complexity of the system and can affect the performance of devices based on these structures.

  1. Reliability of GaAs processes for space applications

    OpenAIRE

    Peray, J.F; Fiers, C.; Crudo, P.; Jacobelli, C.

    1992-01-01

    This paper reviews the reliability of GaAs MMICs processes for low noise and power applications in future space systems. Each technology and library element were evaluated in terms of reliability. Results present main data of each process and an understanding of the causes of each failure modes. Improvements methodology is explained and first results are showed.

  2. GaAs Photovoltaics on Polycrystalline Ge Substrates

    Science.gov (United States)

    Wilt, David M.; Pal, AnnaMaria T.; McNatt, Jeremiah S.; Wolford, David S.; Landis, Geoffrey A.; Smith, Mark A.; Scheiman, David; Jenkins, Phillip P.; McElroy Bruce

    2007-01-01

    High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.

  3. Density-dependent electron scattering in photoexcited GaAs

    DEFF Research Database (Denmark)

    Mics, Zoltán; D'’Angio, Andrea; Jensen, Søren A.

    2013-01-01

    —In a series of systematic optical pump - terahertz probe experiments we study the density-dependent electron scattering rate in photoexcited GaAs in a large range of carrier densities. The electron scattering time decreases by as much as a factor of 4, from 320 to 60 fs, as the electron density...

  4. Status of GaAs solar cell production

    Science.gov (United States)

    Yeh, Milton; Ho, Frank; Iles, Peter A.

    1989-01-01

    Recent experience in producing GaAs solar cells, to meet the full requirements of space-array manufacturers is reviewed. The main problems have been in extending MOCVD technology to provide high throughput of high quality epitaxial layers, and to integrate the other important factors needed to meet the full range of user requirements. Some discussion of evolutionary changes is also given.

  5. Characterization of genotoxic response to 15 multiwalled carbon nanotubes with variable physicochemical properties including surface functionalizations in the FE1-Muta(TM) mouse lung epithelial cell line.

    Science.gov (United States)

    Jackson, Petra; Kling, Kirsten; Jensen, Keld Alstrup; Clausen, Per Axel; Madsen, Anne Mette; Wallin, Håkan; Vogel, Ulla

    2015-03-01

    Carbon nanotubes vary greatly in physicochemical properties. We compared cytotoxic and genotoxic response to 15 multiwalled carbon nanotubes (MWCNT) with varying physicochemical properties to identify drivers of toxic responses. The studied MWCNT included OECD Working Party on Manufactured Nanomaterials (WPMN) (NM-401, NM-402, and NM-403), materials (NRCWE-026 and MWCNT-XNRI-7), and three sets of surface-modified MWCNT grouped by physical characteristics (thin, thick, and short I-III, respectively). Each Groups I-III included pristine, hydroxylated and carboxylated MWCNT. Group III also included an amino-functionalized MWCNT. The level of surface functionalization of the MWCNT was low. The level and type of elemental impurities of the MWCNT varied by <2% of the weight, with exceptions. Based on dynamic light scattering data, the MWCNT were well-dispersed in stock dispersion of nanopure water with 2% serum, but agglomerated and sedimented during exposure. FE1-Muta(TM) Mouse lung epithelial cells were exposed for 24 hr. The levels of DNA strand breaks (SB) were evaluated using the comet assay, a screening assay suitable for genotoxicity testing of nanomaterials. Exposure to MWCNT (12.5-200 µg/ml) did not induce significant cytotoxicity (viability above 92%). Cell proliferation was reduced in highest doses of some MWCNT after 24 hr, and was associated with generation of reactive oxygen species and high surface area. Increased levels of DNA SB were only observed for Group II consisting of MWCNT with large diameters and high Fe2 O3 and Ni content. Significantly, increased levels of SB were only observed at 200 µg/ml of MWCNT-042. Overall, the MWCNT were not cytotoxic and weakly genotoxic after 24 hr exposure to doses up to 200 µg/ml. © 2014 Wiley Periodicals, Inc.

  6. Disposal project for LLW and VLLW generated from research facilities in Japan: A feasibility study for the near surface disposal of VLLW that includes uranium

    International Nuclear Information System (INIS)

    Sakai, Akihiro; Hasegawa, M.; Sakamoto, Y.; Nakatani, T.

    2016-01-01

    Conclusion and future work: • JAEA plans trench disposal of U-bearing waste with less than 100 Bq/g. • Two safety measures of trench disposal of U-bearing waste have been discussed taking into account increasing radioactivity over a long period of time. 1. First is to carry out dose assessment of site use scenario by using a conservatively stylized condition. 2. Second is to control the average concentration of U in the trench facilities based on the concept of the existing exposure situation. • We are continuously developing the method for safety measures of near surface disposal of VLLW including U-bearing waste.

  7. Terahertz radiation on the base of accelerated charge carriers in GaAs; Terahertz-Strahlung auf der Basis beschleunigter Ladungstraeger in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Dreyhaupt, Andre

    2008-07-01

    Electromagnetic radiation in the frequency range between about 100 GHz and 5 THz can be used for spectroscopy and microscopy, but it is also promising for security screening and even wireless communication. In the present thesis a planar photoconducting large-area THz radiation source is presented. The device exhibits outstanding properties, in particular high THz field strength and generation efficiency and large spectral bandwidth with short THz pulse length. The THz emission is based on acceleration and deceleration of photoexcited carriers in semiconductor substrates. A metallic interdigitated structure at the surface of semi-insulating GaAs provides the electrodes of an Auston switch. In a biased structure photoexcited charge carriers are accelerated. Hence electromagnetic waves are emitted. An appropriately structured second metallization, electrically isolated from the electrodes, prevents destructive interference of the emitted waves. The structure investigated here combines several advantages of different conventional photoconducting THz sources. First, it provides high electric acceleration fields at moderate voltages owing to the small electrode separation. Second, the large active area in the mm2 range allows excitation by large optical powers of some mW. Optical excitation with near-infrared femtosecond lasers is possible with repetition rates in the GHz range. The presented results point out the excellent characteristics regarding the emitted THz field strength, average power, spectral properties, and easy handling of the interdigitated structure in comparison to various conventional emitter structures. Various modifications of the semiconductor substrate and the optimum excitation conditions were investigated. In the second part of this thesis the dynamic conductivity of GaAs/Al{sub x}Ga{sub 1-x}As superlattices in an applied static electric field was investigated with time-resolved THz spectroscopy. The original goal was to explore whether the

  8. Ion Back-Bombardment of GaAs Photocathodes Inside DC High Voltage Electron Guns

    CERN Document Server

    Grames, Joseph M; Brittian, Joshua; Charles, Daniel; Clark, Jim; Hansknecht, John; Lynn Stutzman, Marcy; Poelker, Matthew; Surles-Law, Kenneth E

    2005-01-01

    The primary limitation for sustained high quantum efficiency operation of GaAs photocathodes inside DC high voltage electron guns is ion back-bombardment of the photocathode. This process results from ionization of residual gas within the cathode/anode gap by the extracted electron beam, which is subsequently accelerated backwards to the photocathode. The damage mechanism is believed to be either destruction of the negative electron affinity condition at the surface of the photocathode or damage to the crystal structure by implantation of the bombarding ions. This work characterizes ion formation within the anode/cathode gap for gas species typical of UHV vacuum chambers (i.e., hydrogen, carbon monoxide and methane). Calculations and simulations are performed to determine the ion trajectories and stopping distance within the photocathode material. The results of the simulations are compared with test results obtained using a 100 keV DC high voltage GaAs photoemission gun and beamline at currents up to 10 mA D...

  9. Multilayers of GaAs/Mn deposited on a substrate of GaAs (001)

    Energy Technology Data Exchange (ETDEWEB)

    Bernal-Salamanca, M; Pulzara-Mora, A; Rosales-Rivera, A [Laboratorio de Magnetismo y Materiales Avanzados, Universidad Nacional de Colombia, Sede Manizales, A.A. 127 (Colombia); Molina-Valdovinos, S; Melendez-Lira, M [Physics Department, Centro de Investigacion y Estudios Avanzados del IPN, Av. IPN No. 2508, Apartado Postal 14-740, 07000 Mexico D.F (Mexico); Lopez-Lopez, M, E-mail: aopulzaram@unal.edu.c [Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, Apartado Postal 1-1010, Queretaro 76000 (Mexico)

    2009-05-01

    In this work GaAs/Mn multilayers were deposited on GaAs (001) substrates by R.F magnetron sputtering technique, varying the deposition time (tg). Scanning electron and atomic force Microscopy studies were realized on the surface of the samples in order to determine the morphology and average roughness. X-ray diffraction spectra show that our samples tend to do amorphous. Raman spectroscopy at room temperature was employed to analyze the structural properties of the samples. We found that for a GaAs film taken as reference, the Raman spectra is dominated by the transverse (TO) and longitudinal (LO) modes located at 266 cm{sup -1} and 291 cm{sup -1}, respectively. However, for the GaAs/Mn multilayers the TO and LO modes decrease dramatically, and the Mn Raman modes in the range of 100 cm{sup -1} and 250 cm{sup -1} are evidenced. Additional new peaks located around 650 and 690 cm {sup -1} are only observed for the samples with high Mn content. By using the mass reduced model we estimate that the Mn related peaks are located at 650.2 cm{sup -1} and 695.2 cm{sup -1}, in good agreement with the experimental data, these peaks are correlated with excitations due to (Mn){sub m}As{sub n} localized structures.

  10. Effect of catalyst diameter on vapour-liquid-solid growth of GaAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    O' Dowd, B. J., E-mail: odowdbj@tcd.ie; Shvets, I. V. [CRANN, School of Physics, Trinity College, the University of Dublin, Dublin D2 (Ireland); Wojtowicz, T.; Kolkovsky, V.; Wojciechowski, T.; Zgirski, M. [Institute of Physics, Polish Academy of Sciences, Warsaw 02-668 (Poland); Rouvimov, S. [Notre Dame Integrated Imaging Facility (NDIIF), University of Notre Dame, Notre Dame, Indiana 46556 (United States); Liu, X.; Pimpinella, R.; Dobrowolska, M.; Furdyna, J. [Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

    2014-08-14

    GaAs nanowires were grown on (111)B GaAs substrates using the vapour-liquid-solid mechanism. The Au/Pt nanodots used to catalyse wire growth were defined lithographically and had varying diameter and separation. An in-depth statistical analysis of the resulting nanowires, which had a cone-like shape, was carried out. This revealed that there were two categories of nanowire present, with differing height and tapering angle. The bimodal nature of wire shape was found to depend critically on the diameter of the Au-Ga droplet atop the nanowire. Transmission electron microscopy analysis also revealed that the density of stacking faults in the wires varied considerably between the two categories of wire. It is believed that the cause of the distinction in terms of shape and crystal structure is related to the contact angle between the droplet and the solid-liquid interface. The dependency of droplet diameter on contact angle is likely related to line-tension, which is a correction to Young's equation for the contact angle of a droplet upon a surface. The fact that contact angle may influence resulting wire structure and shape has important implications for the planning of growth conditions and the preparation of wires for use in proposed devices.

  11. Quantum Dots obtained by LPE from under-saturated In-As liquid phases on GaAs substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ortiz F E; Mishurnyi V; Gorbatchev A; De Anda F [Universidad Autonoma de San Luis Potosi, Instituto de Investigacion en Comunicacion Optica, Av. Karacorum 1470, Col. Lomas 4a Sec., CP 78210San Luis PotosI (Mexico); Prutskij T, E-mail: fcoe_ov@prodigy.net.mx, E-mail: andre@cactus.iico.uaslp.mx [BUAP, Instituto de Ciencias, Apartado Postal 207, 72000, Puebla (Mexico)

    2011-01-01

    In this work we inform about quantum dots (QD) obtained by Liquid Phase Epitaxy (LPE) on GaAs substrates from under-saturated In-As liquid phases. In our processes, we have prepared saturated In-rich liquid phases by dissolving an InAs wafer at one of the temperatures interval from 450 to 414 C for 60 minutes. The contact between In-As liquid phase and the GaAs substrate was always done at a constant temperature of 444 C for 5 seconds. Thus, the growth temperature for most of the samples was higher than the liquidus temperature. We think that the growth driving force is related to a transient process that occurs when the system is trying to reach equilibrium. Under the atom force microscope (AFM) we have observed nano-islands on the surfaces of the samples obtained from under-saturated liquid phases prepared at 438, 432 and 426 C. The 25 K photoluminescence spectrum shows a peak at a 1.33 eV, in addition to the GaAs related line.

  12. Growth and Photovoltaic Properties of High-Quality GaAs Nanowires Prepared by the Two-Source CVD Method

    Science.gov (United States)

    Wang, Ying; Yang, Zaixing; Wu, Xiaofeng; Han, Ning; Liu, Hanyu; Wang, Shuobo; Li, Jun; Tse, WaiMan; Yip, SenPo; Chen, Yunfa; Ho, Johnny C.

    2016-04-01

    Growing high-quality and low-cost GaAs nanowires (NWs) as well as fabricating high-performance NW solar cells by facile means is an important development towards the cost-effective next-generation photovoltaics. In this work, highly crystalline, dense, and long GaAs NWs are successfully synthesized using a two-source method on non-crystalline SiO2 substrates by a simple solid-source chemical vapor deposition method. The high V/III ratio and precursor concentration enabled by this two-source configuration can significantly benefit the NW growth and suppress the crystal defect formation as compared with the conventional one-source system. Since less NW crystal defects would contribute fewer electrons being trapped by the surface oxides, the p-type conductivity is then greatly enhanced as revealed by the electrical characterization of fabricated NW devices. Furthermore, the individual single NW and high-density NW parallel arrays achieved by contact printing can be effectively fabricated into Schottky barrier solar cells simply by employing asymmetric Ni-Al contacts, along with an open circuit voltage of ~0.3 V. All these results indicate the technological promise of these high-quality two-source grown GaAs NWs, especially for the realization of facile Schottky solar cells utilizing the asymmetric Ni-Al contact.

  13. Growth and Photovoltaic Properties of High-Quality GaAs Nanowires Prepared by the Two-Source CVD Method.

    Science.gov (United States)

    Wang, Ying; Yang, Zaixing; Wu, Xiaofeng; Han, Ning; Liu, Hanyu; Wang, Shuobo; Li, Jun; Tse, WaiMan; Yip, SenPo; Chen, Yunfa; Ho, Johnny C

    2016-12-01

    Growing high-quality and low-cost GaAs nanowires (NWs) as well as fabricating high-performance NW solar cells by facile means is an important development towards the cost-effective next-generation photovoltaics. In this work, highly crystalline, dense, and long GaAs NWs are successfully synthesized using a two-source method on non-crystalline SiO2 substrates by a simple solid-source chemical vapor deposition method. The high V/III ratio and precursor concentration enabled by this two-source configuration can significantly benefit the NW growth and suppress the crystal defect formation as compared with the conventional one-source system. Since less NW crystal defects would contribute fewer electrons being trapped by the surface oxides, the p-type conductivity is then greatly enhanced as revealed by the electrical characterization of fabricated NW devices. Furthermore, the individual single NW and high-density NW parallel arrays achieved by contact printing can be effectively fabricated into Schottky barrier solar cells simply by employing asymmetric Ni-Al contacts, along with an open circuit voltage of ~0.3 V. All these results indicate the technological promise of these high-quality two-source grown GaAs NWs, especially for the realization of facile Schottky solar cells utilizing the asymmetric Ni-Al contact.

  14. Enhanced growth of highly lattice-mismatched CdSe on GaAs substrates by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Wang, Jyh-Shyang; Tsai, Yu-Hsuan; Wang, Hsiao-Hua; Ke, Han-Xiang; Tong, Shih-Chang; Yang, Chu-Shou; Wu, Chih-Hung; Shen, Ji-Lin

    2013-01-01

    This work demonstrates the improvement of the molecular beam epitaxial growth of zinc-blende CdSe on (0 0 1) GaAs substrate with a large lattice mismatch by introducing a small amount of Te atoms. Exposing the growing surface to Te atoms changes the reflection high-energy electron diffraction pattern from spotty to streaky together with (2 × 1) surface reconstruction, and greatly reduces the full width at half maximum of the X-ray rocking curve and increases the integral intensity of room-temperature photoluminescence by a factor of about nine.

  15. Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers

    International Nuclear Information System (INIS)

    Zhi-Qiang, Zhou; Ying-Qiang, Xu; Rui-Ting, Hao; Bao, Tang; Zheng-Wei, Ren; Zhi-Chuan, Niu

    2009-01-01

    We investigate the molecular beam epitaxy growth of GaSb films on GaAs substrates using AlSb buffer layers. Optimization of AlSb growth parameter is aimed at obtaining high GaSb crystal quality and smooth GaSb surface. The optimized growth temperature and thickness of AlSb layers are found to be 450° C and 2.1 nm, respectively. A rms surface roughness of 0.67nm over 10 × 10 μm 2 is achieved as a 0.5μm GaSb film is grown under optimized conditions

  16. Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth

    Directory of Open Access Journals (Sweden)

    A. Lastras-Martínez

    2014-03-01

    Full Text Available We report on real time-resolved Reflectance-difference (RD spectroscopy of GaAs(001 grown by molecular beam epitaxy, with a time-resolution of 500 ms per spectrum within the 2.3–4.0 eV photon energy range. Through the analysis of transient RD spectra we demonstrated that RD line shapes are comprised of two components with different physical origins and determined their evolution during growth. Such components were ascribed to the subsurface strain induced by surface reconstruction and to surface stoichiometry. Results reported in this paper render RD spectroscopy as a powerful tool for the study of fundamental processes during the epitaxial growth of zincblende semiconductors.

  17. Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth

    Energy Technology Data Exchange (ETDEWEB)

    Lastras-Martínez, A., E-mail: alm@cactus.iico.uaslp.mx, E-mail: alastras@gmail.com; Ortega-Gallegos, J.; Guevara-Macías, L. E.; Nuñez-Olvera, O.; Balderas-Navarro, R. E.; Lastras-Martínez, L. F. [Instituto de Investigación en Comunicación Optica, Universidad Autónoma de San Luis Potosí, Alvaro Obregón 64, San Luis Potosí, SLP 78000 (Mexico); Lastras-Montaño, L. A. [IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Lastras-Montaño, M. A. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, California 93106 (United States)

    2014-03-01

    We report on real time-resolved Reflectance-difference (RD) spectroscopy of GaAs(001) grown by molecular beam epitaxy, with a time-resolution of 500 ms per spectrum within the 2.3–4.0 eV photon energy range. Through the analysis of transient RD spectra we demonstrated that RD line shapes are comprised of two components with different physical origins and determined their evolution during growth. Such components were ascribed to the subsurface strain induced by surface reconstruction and to surface stoichiometry. Results reported in this paper render RD spectroscopy as a powerful tool for the study of fundamental processes during the epitaxial growth of zincblende semiconductors.

  18. Multiband corrections for the semi-classical simulation of interband tunneling in GaAs tunnel junctions

    Science.gov (United States)

    Louarn, K.; Claveau, Y.; Hapiuk, D.; Fontaine, C.; Arnoult, A.; Taliercio, T.; Licitra, C.; Piquemal, F.; Bounouh, A.; Cavassilas, N.; Almuneau, G.

    2017-09-01

    The aim of this study is to investigate the impact of multiband corrections on the current density in GaAs tunnel junctions (TJs) calculated with a refined yet simple semi-classical interband tunneling model (SCITM). The non-parabolicity of the considered bands and the spin-orbit effects are considered by using a recently revisited SCITM available in the literature. The model is confronted to experimental results from a series of molecular beam epitaxy grown GaAs TJs and to numerical results obtained with a full quantum model based on the non-equilibrium Green’s function formalism and a 6-band k.p Hamiltonian. We emphasize the importance of considering the non-parabolicity of the conduction band by two different measurements of the energy-dependent electron effective mass in N-doped GaAs. We also propose an innovative method to compute the non-uniform electric field in the TJ for the SCITM simulations, which is of prime importance for a successful operation of the model. We demonstrate that, when considering the multiband corrections and this new computation of the non-uniform electric field, the SCITM succeeds in predicting the electrical characteristics of GaAs TJs, and are also in agreement with the quantum model. Besides the fundamental study of the tunneling phenomenon in TJs, the main benefit of this SCITM is that it can be easily embedded into drift-diffusion software, which are the most widely-used simulation tools for electronic and opto-electronic devices such as multi-junction solar cells, tunnel field-effect transistors, or vertical-cavity surface-emitting lasers.

  19. Minority electron mobilities in GaAs, In0.53Ga0.47As, and GaAs0.50Sb0.50 calculated within an ensemble Monte Carlo model

    Science.gov (United States)

    Tea, E.; Aniel, F.

    2011-02-01

    The minority electron transport is crucial for the performances of heterojunction bipolar transistors (HBTs). Among the III-V semiconductors family, GaAsSb exhibits several advantages making it a serious candidate for the new generation of high speed HBTs. However, this alloy suffers from a lack of experimental studies. Properties such as electronic structure and charge carrier mobilities are of prime importance in theoretical device operation calculations. In this article, we investigate the minority electron mobilities by means of an ensemble Monte Carlo modeling including polar optical phonon-plasmon coupling through a self-consistent dielectric function. Realistic electronic structures are provided by a nonlocal empirical pseudopotential method. It is found that GaAs0.50Sb0.50 does not show a mobility enhancement for very high acceptor doping levels unlike GaAs and Ga0.47In0.53As.

  20. Spin dynamics in GaAs and (110)-GaAs heterostructures; Spindynamik in GaAs und (110)-GaAs-Heterostrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Oertel, Stefan

    2012-07-01

    This thesis investigates the spin dynamics in both bulk GaAs and (llO)GaAs heterostructures using time- and polarization-resolved photoluminescence spectroscopy. In bulk GaAs the spin relaxation t ime is measured for the first time in the high temperature regime from 280 K to 400 K and is compared to numerical calculations. The numerical calculations are based on the spin relaxation theory of the Dyakonov-Perel mechanism effected by momentum scattering with polar optical phonons and electron-electron scattering and are in good agreement with the experimental results. Measurements of the dependence on the electron density serve to determine the energy dependent proportional factor between the electron density and the effective electron-electron scattering time. Also in bulk GaAs the interaction between the electron spin system and the nuclear spin system is investigated. The measured electron Lande g-factor under the influence of the nuclear magnetic field is used as an indicator to monitor the temporal evolution of the nuclear magnetic field under sustained dynamic nuclear polarization. Measurements with polarization modulated excitation enable the determination of the relevant time scale at which dynamic nuclear polarization takes place. Furthermore, the temporal evolution of the measured electron Lande g-factor shows the complex interplay of the dynamic nuclear polarization, the nuclear spin diffusion and the nuclear spin relaxation. In symmetric (110)-GaAs quantum wells the dependence of the inplane anisotropy of the electron Lande g-factor on the quantum well thickness is determined experimentally. The measurements are in very good agreement with calculations based upon k . p-theory and reveal a maximum of the anisotropy at maximum carrier localization in the quantum well. The origin of the anisotropy that is not present in symmetric (001) quantum wells is qualitatively described by means of a simplified model based on fourth-order perturbation theory. A

  1. GaAs mixed signal multi-function X-band MMIC with 7 bit phase and amplitude control and integrated serial to parallel converter

    NARCIS (Netherlands)

    Boer, A. de; Mouthaan, K.

    2000-01-01

    The design and measured performance of a GaAs multi-function X-band MMIC for spacebased synthetic aperture radar (SAR) applications with 7-bit phase and amplitude control and integrated serial to parallel converter (including level conversion) is presented. The main application for the

  2. Second-sphere complexation of thorium(IV) by cucurbit[6]uril with included perrhenate counterions. Crystal structure and Hirshfeld surface analysis

    Energy Technology Data Exchange (ETDEWEB)

    Thuery, Pierre [CEA, IRAMIS, UMR 3685 NIMBE, Laboratoire de Chimie Moleculaire et Catalyse pour l' Energie (LCMCE), Gif-sur-Yvette (France)

    2015-04-15

    The reaction of thorium(IV) nitrate with cucurbit[6]uril (CB6) in the presence of perrhenic acid in water gives the complex [Th(NO{sub 3})(H{sub 2}O){sub 8}][(ReO{sub 4})(CB6)](ReO{sub 4}){sub 2}.3H{sub 2}O (1). Aquated cations are held at both CB6 portals by ion-dipole and hydrogen-bonding interactions, and one of the ReO{sub 4}{sup -} anions is included in the CB6 cavity. The packing displays columns of alternate cations and encapsulated anions. Hirshfeld surfaces are used to visualize short contacts between the species present. (Copyright copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Atomic structures of a monolayer of AlAs, GaAs, and InAs on Si(111)

    International Nuclear Information System (INIS)

    Lee, Geunjung; Yoon, Younggui

    2010-01-01

    We study atomic structures of a monolayer of AlAs, GaAs, and InAs on a Si(111) substrate from first-principles. The surface with the stacking sequence of ...SiSiMAsSiAs is energetically more stable than the surface with the stacking sequence of ...SiSiSiAsMAs, where M is Al, Ga, or In. The atomic structure of the three top layers of the low-energy surfaces are quite robust, irrespective of M, and the atomic structure of the AlAsSiAs terminated surface and that of the GaAsSiAs terminated surface are very similar. For the high-energy AsMAs terminated surfaces, the broken local tetrahedral symmetry plays an important role in the atomic structures. The calculated atomic structures of InAs on the Si(111) substrate depart most from the structure of crystalline Si.

  4. Initial Stages of GaAs/Au Eutectic Alloy Formation for the Growth of GaAs Nano wires

    International Nuclear Information System (INIS)

    Rosnita, M.; Yussof, W.; Zuhairi, I.; Zulkafli, O.; Samsudi, S.

    2012-01-01

    Annealing temperature plays an important role in the formation of an Au-Ga eutectic alloy. The effects of the annealing temperature on gold nanoparticles colloid and substrate surface were studied using AFM, FE-SEM and TEM. At 600 degree Celsius, the layer of gold colloids particle formed an island in the state of molten eutectic alloy and absorbed evaporated metal-organics to formed nano wire (NW) underneath the alloy. Pit formed on the substrate surface due to the chemical reactions during the annealing process have an impact on the direction of growth of the NW. Without annealing, the NW formed vertically on the GaAs (100) surface. The growth direction depends on the original nucleation facets and surface energy when annealed. When annealed, the wire base is large and curved due to the migration of Ga atoms on the substrate surface towards the tip of the wire and the line tension between the substrate surface and gold particle. (author)

  5. Single-Crystalline Aluminum Nanostructures on a Semiconducting GaAs Substrate for Ultraviolet to Near-Infrared Plasmonics.

    Science.gov (United States)

    Liu, Hsuan-Wei; Lin, Fan-Cheng; Lin, Shi-Wei; Wu, Jau-Yang; Chou, Bo-Tsun; Lai, Kuang-Jen; Lin, Sheng-Di; Huang, Jer-Shing

    2015-04-28

    Aluminum, as a metallic material for plasmonics, is of great interest because it extends the applications of surface plasmon resonance into the ultraviolet (UV) region and is superior to noble metals in natural abundance, cost, and compatibility with modern semiconductor fabrication processes. Ultrasmooth single-crystalline metallic films are beneficial for the fabrication of high-definition plasmonic nanostructures, especially complex integrated nanocircuits. The absence of surface corrugation and crystal boundaries also guarantees superior optical properties and applications in nanolasers. Here, we present UV to near-infrared plasmonic resonance of single-crystalline aluminum nanoslits and nanoholes. The high-definition nanostructures are fabricated with focused ion-beam milling into an ultrasmooth single-crystalline aluminum film grown on a semiconducting GaAs substrate with a molecular beam epitaxy method. The single-crystalline aluminum film shows improved reflectivity and reduced two-photon photoluminescence (TPPL) due to the ultrasmooth surface. Both linear scattering and nonlinear TPPL are studied in detail. The nanoslit arrays show clear Fano-like resonance, and the nanoholes are found to support both photonic modes and localized surface plasmon resonance. We also found that TPPL generation is more efficient when the excitation polarization is parallel rather than perpendicular to the edge of the aluminum film. Such a counterintuitive phenomenon is attributed to the high refractive index of the GaAs substrate. We show that the polarization of TPPL from aluminum preserves the excitation polarization and is independent of the crystal orientation of the film or substrate. Our study gains insight into the optical property of aluminum nanostructures on a high-index semiconducting GaAs substrate and illustrates a practical route to implement plasmonic devices onto semiconductors for future hybrid nanodevices.

  6. Resistance Fluctuations in GaAs Nanowire Grids

    Directory of Open Access Journals (Sweden)

    Ivan Marasović

    2014-01-01

    Full Text Available We present a numerical study on resistance fluctuations in a series of nanowire-based grids. Each grid is made of GaAs nanowires arranged in parallel with metallic contacts crossing all nanowires perpendicularly. Electrical properties of GaAs nanowires known from previous experimental research are used as input parameters in the simulation procedure. Due to the nonhomogeneous doping, the resistivity changes along nanowire. Allowing two possible nanowire orientations (“upwards” or “downwards”, the resulting grid is partially disordered in vertical direction which causes resistance fluctuations. The system is modeled using a two-dimensional random resistor network. Transfer-matrix computation algorithm is used to calculate the total network resistance. It is found that probability density function (PDF of resistance fluctuations for a series of nanowire grids changes from Gaussian behavior towards the Bramwell-Holdsworth-Pinton distribution when both nanowire orientations are equally represented in the grid.

  7. GaAs nanocrystals: Structure and vibrational properties

    International Nuclear Information System (INIS)

    Nayak, J.; Sahu, S.N.; Nozaki, S.

    2006-01-01

    GaAs nanocrystals were grown on indium tin oxide substrate by an electrodeposition technique. Atomic force microscopic measurement indicates an increase in the size of the nanocrystal with decrease in the electrolysis current density accompanied by the change in the shape of the crystallite. Transmission electron microscopic measurements identify the crystallite sizes to be in the range of 10-15 nm and the crystal structure to be orthorhombic. On account of the quantum size effect, the first optical transition was blue shifted with respect to the band gap of the bulk GaAs and the excitonic peak appeared prominent. A localized phonon mode ascribed to certain point defect occurred in the room temperature micro-Raman spectrum

  8. Laser-excited photoluminescence of three-layer GaAs double-heterostructure laser material

    International Nuclear Information System (INIS)

    Nash, F.R.; Dixon, R.W.; Barnes, P.A.; Schumaker, N.E.

    1975-01-01

    The successful fabrication of high-quality DH GaAs lasers from a simplified three-layer structure is reported. A major asset of this structure is the transparency of its final layer to recombination radiation occurring in the active layer, thus permitting the use of nondestructive photoluminescent techniques for material evaluation prior to device fabrication. In the course of photoluminescence investigations on this material the additional important observation has been made that indirect excitation (in which photocarriers are generated in the top ternary layer) has significant advantages over direct excitation (in which photocarriers are generated directly in the active layer). These include (i) the direct measurement of Al concentrations in both upper layers, (ii) the measurements of the minority-carrier diffusion length in the upper layer, (iii) an easily obtained indication of taper in the thickness of the upper layer, and (iv) surprisingly effective excitation of the active layer. By combining direct and indirect excitation it is shown that a clearer understanding of the location and detrimental influences of defects in the GaAs laser structure may be obtained. For example, the width of the region of reduced luminescence associated with many defects is found to be very excitation dependent and is confirmed to arise fr []m reduced active region luminescence. The photoluminescent excitation techniques described should be useful in the study of other heterostructure devices and material systems

  9. Nonlinear intersubband optical absorption of Si {delta}-doped GaAs under an electric field

    Energy Technology Data Exchange (ETDEWEB)

    Yildirim, Hasan; Tomak, Mehmet [Middle East Technical University, Department of Physics, Ankara 06531 (Turkey)

    2006-10-15

    We study the nonlinear intersubband optical absorption of a single Si {delta}-doped GaAs sheet placed in the middle of a GaAs quantum well and subjected to an electric field. The Schroedinger and Poisson equations are solved self-consistently for various electric field strengths. The self-consistent solutions provide us with the correct confining potential, the wave functions, the corresponding subband energies and the subband occupations. The nonlinear optical intersubband absorption spectra are discussed within the framework of the density matrix formulation for various electric field strengths, well widths, and sheet thicknesses in which Si atoms are distributed uniformly. We include both the depolarization and exciton shifts in calculations. The depolarization effect not only shifts the peak value but also makes the nonlinear absorption spectrum strongly asymmetric with the increasing intensity of the optical field. The blue-shift associated with the depolarization shift is decreased when the intensity is increased. The absorption line shape becomes more asymmetric at smaller well widths and thicker doping layers. The electric field restores the symmetry of the absorption line shape at larger well widths and thinner doping layers, but it decreases the peak value of the line shape. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach

    Directory of Open Access Journals (Sweden)

    Takashi Nakayama

    2013-08-01

    Full Text Available We review the surface stability and growth kinetics of III-V and III-nitride semiconductors. The theoretical approach used in these studies is based on ab initio calculations and includes gas-phase free energy. With this method, we can investigate the influence of growth conditions, such as partial pressure and temperature, on the surface stability and growth kinetics. First, we examine the feasibility of this approach by comparing calculated surface phase diagrams of GaAs(001 with experimental results. In addition, the Ga diffusion length on GaAs(001 during molecular beam epitaxy is discussed. Next, this approach is systematically applied to the reconstruction, adsorption and incorporation on various nitride semiconductor surfaces. The calculated results for nitride semiconductor surface reconstructions with polar, nonpolar, and semipolar orientations suggest that adlayer reconstructions generally appear on the polar and the semipolar surfaces. However, the stable ideal surface without adsorption is found on the nonpolar surfaces because the ideal surface satisfies the electron counting rule. Finally, the stability of hydrogen and the incorporation mechanisms of Mg and C during metalorganic vapor phase epitaxy are discussed.

  11. Epitaxial growth on porous GaAs substrates

    Czech Academy of Sciences Publication Activity Database

    Grym, Jan; Nohavica, Dušan; Gladkov, Petar; Hulicius, Eduard; Pangrác, Jiří; Piksová, K.

    2013-01-01

    Roč. 16, č. 1 (2013), s. 59-64 ISSN 1631-0748 R&D Projects: GA ČR GAP102/10/1201; GA ČR GAP108/10/0253 Institutional support: RVO:67985882 ; RVO:68378271 Keywords : Electrochemical etching * Porous semiconductors * Epitaxial growth * GaAs Subject RIV: BH - Optics, Masers, Lasers; JA - Electronics ; Optoelectronics, Electrical Engineering (FZU-D) Impact factor: 1.483, year: 2013

  12. Solar heating of GaAs nanowire solar cells.

    Science.gov (United States)

    Wu, Shao-Hua; Povinelli, Michelle L

    2015-11-30

    We use a coupled thermal-optical approach to model the operating temperature rise in GaAs nanowire solar cells. We find that despite more highly concentrated light absorption and lower thermal conductivity, the overall temperature rise in a nanowire structure is no higher than in a planar structure. Moreover, coating the nanowires with a transparent polymer can increase the radiative cooling power by 2.2 times, lowering the operating temperature by nearly 7 K.

  13. Gallium arsenide (GaAs) solar cell modeling studies

    Science.gov (United States)

    Heinbockel, J. H.

    1980-01-01

    Various models were constructed which will allow for the variation of system components. Computer studies were then performed using the models constructed in order to study the effects of various system changes. In particular, GaAs and Si flat plate solar power arrays were studied and compared. Series and shunt resistance models were constructed. Models for the chemical kinetics of the annealing process were prepared. For all models constructed, various parametric studies were performed.

  14. Performance Comparison of Top and Bottom Contact Gallium Arsenide (GaAs) Solar Cell

    Science.gov (United States)

    2014-09-01

    Performance Comparison of Top and Bottom Contact Gallium Arsenide (GaAs) Solar Cell by Naresh C Das ARL-TR-7054 September 2014...September 2014 Performance Comparison of Top and Bottom Contact Gallium Arsenide (GaAs) Solar Cell Naresh C Das Sensors and Electron...From - To) 01/02/2014–07/15/2014 4. TITLE AND SUBTITLE Performance Comparison of Top and Bottom Contact Gallium Arsenide (GaAs) Solar Cell 5a

  15. Metallization systems for stable ohmic contacts to GaAs

    International Nuclear Information System (INIS)

    Tandon, J.L.; Douglas, K.D.; Vendura, G.; Kolawa, E.; So, F.C.T.; Nicolet, M.A.

    1986-01-01

    A metallization scheme to form reproducible and stable ohmic contacts to GaAs is described. The approach is based on the configuration: GaAs/X/Y/Z; where X is a thin metal film (e.g. Pt, Ti, Pd, Ru), Y is an electrically conducting diffusion barrier layer (TiN, W or W/sub 0.7/N/sub 0.3/), and Z is a thick metal layer (e.g. Ag) typically required for bonding or soldering purposes. The value and reproducibility of the contact resistance in these metallization systems results from the uniform steady-state solid-phase reaction of the metal X with GaAs. The stability of the contacts is achieved by the diffusion barrier layer Y, which not only confines the reaction of X with GaAs, but also prevents the top metal layer Z from interfering with this reaction. Applications of such contacts in fabricating stable solar cells are also discussed

  16. Large area, low capacitance, GaAs nanowire photodetector with a transparent Schottky collecting junction

    Energy Technology Data Exchange (ETDEWEB)

    Seyedi, M. A., E-mail: seyedi@usc.edu; Yao, M.; O' Brien, J.; Dapkus, P. D. [Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089 (United States); Wang, S. Y. [Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089 (United States); Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, University of California, Santa Cruz, California 95064, USA and NASA Ames Research Center, Moffett Field, California 94035 (United States)

    2013-12-16

    We present experimental results on a GaAs/Indium-Tin-Oxide Schottky-like heterojunction photodetector based on a nanowire device geometry. By distributing the active detecting area over an array of nanowires, it is possible to achieve large area detection with low capacitance. Devices with bare GaAs and passivated AlGaAs/GaAs nanowires are fabricated to compare the responsivity with and without surface passivation. We are able to achieve responsivity of >0.5A/W and Signal-Noise-Ratio in excess of 7 dB for 2 V applied reverse bias with passivated nanowire devices. Capacitance-voltage measurement yields <5 nF/cm{sup 2}, which shows a strong possibility for high-speed applications with a broad area device.

  17. Homojunction GaAs solar cells grown by close space vapor transport

    Energy Technology Data Exchange (ETDEWEB)

    Boucher, Jason W. [University of Oregon; Ritenour, Andrew J. [University of Oregon; Greenaway, Ann L. [University of Oregon; Aloni, Shaul [Lawrence Berkeley National Laboratory; Boettcher, Shannon W. [University of Oregon

    2014-06-08

    We report on the first pn junction solar cells grown by homoepitaxy of GaAs using close space vapor transport (CSVT). Cells were grown both on commercial wafer substrates and on a CSVT absorber film, and had efficiencies reaching 8.1%, open circuit voltages reaching 909 mV, and internal quantum efficiency of 90%. The performance of these cells is partly limited by the electron diffusion lengths in the wafer substrates, as evidenced by the improved peak internal quantum efficiency in devices fabricated on a CSVT absorber film. Unoptimized highly-doped n-type emitters also limit the photocurrent, indicating that thinner emitters with reduced doping, and ultimately wider band gap window or surface passivation layers, are required to increase the efficiency.

  18. Field-Dependent Measurement of GaAs Composition by Atom Probe Tomography.

    Science.gov (United States)

    Di Russo, Enrico; Blum, Ivan; Houard, Jonathan; Da Costa, Gérald; Blavette, Didier; Rigutti, Lorenzo

    2017-12-01

    The composition of GaAs measured by laser-assisted atom probe tomography may be inaccurate depending on the experimental conditions. In this work, we assess the role of the DC field and the impinging laser energy on such compositional bias. The DC field is found to have a major influence, while the laser energy has a weaker one within the range of parameters explored. The atomic fraction of Ga may vary from 0.55 at low-field conditions to 0.35 at high field. These results have been interpreted in terms of preferential evaporation of Ga at high field. The deficit of As is most likely explained by the formation of neutral As complexes either by direct ejection from the tip surface or upon the dissociation of large clusters. The study of multiple detection events supports this interpretation.

  19. Noise behaviour of semiinsulating GaAs particle detectors at various temperatures before and after irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Tenbusch, F.; Braunschweig, W.; Chu, Z.; Krais, R.; Kubicki, T.; Luebelsmeyer, K.; Pandoulas, D.; Rente, C.; Syben, O.; Toporowski, M.; Wittmer, B.; Xiao, W.J. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.

    1998-02-01

    We investigated the noise behaviour of surface barrier detectors (double sided Schottky contact) made of semiinsulating GaAs. Two types of measurements were performed: equivalent noise charge (ENC) and noise power density spectra in a frequency range from 10 Hz to 500 kHz. The shape of the density spectra are a powerful tool to examine the physical origin of the noise, before irradiation it is dominated by generation-recombination processes caused by deep levels. Temperature dependent noise measurements reveal the deep level parameters like activation energy and cross section, which are also extracted by analyzing the time transients of the charge pulse from {alpha}-particles. After irradiation with protons, neutrons and pions the influence of the deep levels being originally responsible for the noise is found to decrease and a reduction of the noise over the entire frequency range with increasing fluence is observed. (orig.). 21 refs.

  20. Identification a novel mononucleotide deletion mutation in GAA in pompe disease patients

    Directory of Open Access Journals (Sweden)

    Milad Ebrahimi

    2017-01-01

    Full Text Available Background: Mutations in the acid alpha-glucosidase (GAA gene usually lead to reduced GAA activity. In this study, we analyzed the mutations of GAA and GAA enzyme activity from one sibling suspected Pompe disease and their first-degree relatives. Materials and Methods: In this cross-sectional study, GAA enzyme activity assay was assessed using tandem mass spectrometry. Polymerase chain reaction and Sanger sequencing were performed for GAA analysis. Results: GAA enzyme activity was significantly decreased in patients compared to the normal range (P = 0.02. Two individuals showed ten alterations in the GAA sequence, in which one of them (c. 1650del G has not been previously described in the literature. A single Guanine deletion (del-G was detected at codon 551 in exon 12. Conclusion: According to the literature, the detected change is a novel mutation. We hypothesized that the discovered deletion in the GAA might lead to a reduced activity of the gene product.

  1. Towards low-cost high-efficiency GaAs photovoltaics and photoelectrodes grown via vapor transport from a solid source

    Energy Technology Data Exchange (ETDEWEB)

    Boucher, Jason [University of Oregon; Ritenour, Andrew [University of Oregon; Boettcher, Shannon W. [University of Oregon

    2013-04-29

    Towards low-cost high-efficiency GaAs photovoltaics and photoelectrodes grown via vapor transport from a solid source GaAs is an attractive material for thin-film photovoltaic applications, but is not widely used for terrestrial power generation due to the high cost of metal-organic chemical vapor deposition (MOCVD) techniques typically used for growth. Close space vapor transport is an alternative that allows for rapid growth rates of III-V materials, and does not rely on the toxic and pyrophoric precursors used in MOCVD. We characterize CSVT films of GaAs using photoelectrochemical current-voltage and quantum efficiency measurements. Hole diffusion lengths which exceed 1.5 um are extracted from internal quantum efficiency measurements using the Gartner model. Device physics simulations suggest that solar cells based on these films could reach efficiencies exceeding 24 %. To reach this goal, a more complete understanding of the electrical properties and characterization of defects will be necessary, including measurements on complete solid-state devices. Doping of films is achieved by using source material containing the desired impurity (e.g., Te or Zn). We discuss strategies for growing III-V materials on inexpensive substrates that are not lattice-matched to GaAs.

  2. Homozygotic intronic GAA mutation in three siblings with late-onset Pompe's disease Mutação homozigótica intrônica no gene GAA em três irmãos com doença de Pompe de início tardio

    Directory of Open Access Journals (Sweden)

    Anderson Kuntz Grzesiuk

    2010-04-01

    Full Text Available Pompe's disease (PD is a metabolic myopathy caused by the accumulation of lysosomal glycogen, secondary to acid α-glucosidase (GAA enzyme deficiency. Childhood and late-onset forms are described, differing by the age of onset and symptoms. In this study were analyzed affected siblings with Pompe's disease (PD and their distinct clinical and pathological presentations. METHOD: Diagnosis was performed by the clinical presentation of limb-girdle dystrophies and respiratory compromise. Confirmatory diagnoses were conducted by muscle biopsy, GAA activity measurement and by GAA gene genotyping. RESULTS: The findings suggested muscular involvement due to GAA deficiency. GAA genotyping showed they are homozygous for the c.-32-3C>A mutation. CONCLUSION: Herein we reported a family where three out of five siblings were diagnosed with late-onset PD, although it is a rare metabolic disease inherited in an autossomal recessive manner. We emphasize the importance of including this presentation within the differential diagnoses of the limb-girdle dystrophies once enzyme replacement therapy is available.A doença de Pompe (DP é uma miopatia originada do acúmulo lisossomal de glicogênio, devido à deficiência da enzima α-glicosidase ácida (GAA, sendo descritas formas de inicio precoce e tardio. Neste estudo analisamos retrospectivamente o perfil clinico e patológico de 3 irmãos portadores de doença de Pompe de inicio tardio. MÉTODO: O diagnóstico foi realizado mediante apresentação clinica de distrofia de cinturas associado a comprometimento respiratório, sendo confirmado por biópsia muscular e análise da atividade e genotipagem da GAA. RESULTADOS: Os exames clínicos e laboratoriais demonstram envolvimento muscular devido à deficiência da GAA, com uma mutação c.-32-3C>A em homozigose. CONCLUSÃO: Relatamos os aspectos clínicos e laboratoriais de 3 irmãos afetados por doença de Pompe de início tardio. Enfatizamos a importância de

  3. Surface magnetism of gallium arsenide nanofilms

    Science.gov (United States)

    Lu, Huan; Yu, Jin; Guo, Wanlin

    2017-11-01

    Gallium arsenide (GaAs) is the most widely used second-generation semiconductor with a direct band gap, and it is being increasingly used as nanofilms. However, the magnetic properties of GaAs nanofilms have never been studied. Here we find by comprehensive density-functional-theory calculations that GaAs nanofilms cleaved along the 〈111 〉 and 〈100 〉 directions become intrinsically metallic films with strong surface magnetism and the magnetoelectric effect. Surface magnetism and electrical conductivity are realized via a combined effect of charge transfer induced by spontaneous electric polarization through the film thickness and spin-polarized surface states. The surface magnetism of 〈111 〉 nanofilms can be significantly and linearly tuned by a vertically applied electric field, endowing the nanofilms with unexpectedly high magnetoelectric coefficients, which are tens of times higher than those of ferromagnetic metals and transition-metal oxides.

  4. MMIC GaAs Bonding Investigation

    Science.gov (United States)

    1992-06-01

    Baral- Tosh , S.; Ramseyer, G.O.; Spencer, J.T.; Kim, Y.-G.; Dowben, P.A. Mat. Res. Soc. Proc. 1991, 190, 101. 39. Mazurowski, J., M.S. Thesis...RESULTING FROM THIS PROJECT 1. Brady, R.L.; Southmayd, D.; Contescu, C.; Zhang , R.; Schwarz, J.A. "Surface Area Determination of Supported Oxides: W0...from Metal Hexacarbonyls", J. Vac. Sci. Technol. 1990,,].M,1804. 8. Mazurowski, J.; Baral- Tosh , S.; Ramseyer, G.O.; Spencer, J.T.; Kim, Y.-G.; Dowben

  5. Estimates of effective elastic thickness of oceanic lithosphere using model including surface and subsurface loads and effective elastic thickness of subduction zones

    Science.gov (United States)

    Yang, A.; Yongtao, F.

    2016-12-01

    The effective elastic thickness (Te) is an important parameter that characterizes the long term strength of the lithosphere, which has great significance on understanding the mechanical properties and evolution of the lithosphere. In contrast with many controversies regarding elastic thickness of continent lithosphere, the Te of oceanic lithosphere is thought to be in a simple way that is dependent on the age of the plate. However, rescent studies show that there is no simple relationship between Te and age at time of loading for both seamounts and subduction zones. As subsurface loading is very importand and has large influence in the estimate of Te for continent lithosphere, and many oceanic features such as subduction zones also have considerable subsurface loading. We introduce the method to estimate the effective elastic thickness of oceanic lithosphere using model including surface and subsurface loads by using free-air gravity anomaly and bathymetric data, together with a moving window admittance technique (MWAT). We use the multitaper spectral estimation method to calculate the power spectral density. Through tests with synthetic subduction zone like bathymetry and gravity data show that the Te can be recovered in an accurance similar to that in the continent and there is also a trade-off between spatial resolution and variance for different window sizes. We estimate Te of many subduction zones (Peru-Chile trench, Middle America trench, Caribbean trench, Kuril-Japan trench, Mariana trench, Tonga trench, Java trench, Ryukyu-Philippine trench) with an age range of 0-160 Myr to reassess the relationship between elastic thickness and the age of the lithosphere at the time of loading. The results do not show a simple relationship between Te and age.

  6. Application of atomic mutations included in nuclear reactions, 40Ar(γ, p)39Cl(β decay)39Ar, to surface study

    International Nuclear Information System (INIS)

    Ohkuma, Juzo

    1987-01-01

    It has been found that the nuclear transformation processes which are initiated by photonuclear reactions can be used for studying the adsorption and chemical reactions taking place on solid surfaces. Chemically reactive 39 Cl was produced by irradiating 40 Ar with high-energy bremsstrahlung, and its blow was directed onto several material surfaces. The amount of chlorine adsorption was ascertained by detecting its radioactivity. Desorption without heating the adsorber samples inevitably occurred owing to the nuclear decay of 39 Cl. The adsorption and desorption rates were compared for several elements. A fast growth of oxide islands on sample surfaces was observed during the adsorption-desorption process. (author)

  7. Influence of a Thiolate Chemical Layer on GaAs (100 Biofunctionalization: An Original Approach Coupling Atomic Force Microscopy and Mass Spectrometry Methods

    Directory of Open Access Journals (Sweden)

    Alex Bienaime

    2013-10-01

    Full Text Available Widely used in microelectronics and optoelectronics; Gallium Arsenide (GaAs is a III-V crystal with several interesting properties for microsystem and biosensor applications. Among these; its piezoelectric properties and the ability to directly biofunctionalize the bare surface, offer an opportunity to combine a highly sensitive transducer with a specific bio-interface; which are the two essential parts of a biosensor. To optimize the biorecognition part; it is necessary to control protein coverage and the binding affinity of the protein layer on the GaAs surface. In this paper; we investigate the potential of a specific chemical interface composed of thiolate molecules with different chain lengths; possessing hydroxyl (MUDO; for 11-mercapto-1-undecanol (HS(CH211OH or carboxyl (MHDA; for mercaptohexadecanoic acid (HS(CH215CO2H end groups; to reconstitute a dense and homogeneous albumin (Rat Serum Albumin; RSA protein layer on the GaAs (100 surface. The protein monolayer formation and the covalent binding existing between RSA proteins and carboxyl end groups were characterized by atomic force microscopy (AFM analysis. Characterization in terms of topography; protein layer thickness and stability lead us to propose the 10% MHDA/MUDO interface as the optimal chemical layer to efficiently graft proteins. This analysis was coupled with in situ MALDI-TOF mass spectrometry measurements; which proved the presence of a dense and uniform grafted protein layer on the 10% MHDA/MUDO interface. We show in this study that a critical number of carboxylic docking sites (10% is required to obtain homogeneous and dense protein coverage on GaAs. Such a protein bio-interface is of fundamental importance to ensure a highly specific and sensitive biosensor.

  8. Variations in first principles calculated defect energies in GaAs and ...

    Indian Academy of Sciences (India)

    In particular, we have compared a large set of computed energies and selected the most appropriate values. Then, in the context of GaAs material quality, we investigated the impact of errors in calculation of formation energies on the performance of the GaAs substrate for device fabrication. We find that in spite of the errors ...

  9. Thin-film GaAs epitaxial life-off solar cells for space applications

    NARCIS (Netherlands)

    Schermer, J.J.; Mulder, P.; Bauhuis, G.J.; Larsen, P.K.; Oomen, G.; Bongers, E.

    2005-01-01

    In the present work the space compatibility of thin-film GaAs solar cells is studied. These cells are separated from their GaAs substrate by the epitaxial lift-off (ELO) technique and mounted behind a CMG cover glass which at the same time serves as a stable carrier for the thin film cells. In the

  10. Characterization of semiconductor surfaces and interfaces by high energy ion scattering

    International Nuclear Information System (INIS)

    Narusawa, Tadashi; Kobayashi, K.L.I.; Nakashima, Hisao

    1984-01-01

    The use of surface peak, which appears in MeV ion channeling experiments, is demonstrated as a local probe for direct and quantitative measurements of atomic displacements smaller than --0.1A. The atomic structures of GaAs(001)-c(4x4) clean surface and hydrogen-absorbed (1x1) surface are analyzed by this technique as well as the interface atomic structures of GaAs(001)-SiOsub(x) and Si(111)-Pd systems. (author)

  11. Growth initiation processes for GaAs and AlGaAs in CBE

    International Nuclear Information System (INIS)

    Hill, D.

    2002-01-01

    The aim of this work was to investigate the nature of the transient period found in reflectance anisotropy (RA) measurements of high III:V BEP ratio growth of gallium arsenide (GaAs) and aluminium gallium arsenide (AIGaAs) by chemical beam epitaxy (CBE). Growth at substrate temperatures between 510-610 deg C with arsine (AsH 3 ) thermally cracked to As 2 , triethylgallium (TEGa), trimethylgallium (TMGa), trimethylaminealane (TMAA) and diethylmethylaminealane (DEMAA) at high III:V BEP ratios reveals that the transition from 'pre-growth' to 'in-growth' reconstructions is not as straightforward as that for lower III:V BEP ratio growth. Instead of the reconstruction changing directly to the usual 2x4 'in-growth' reconstruction over 1-2 seconds it passes through several other transient reconstructions over a period of up to and greater than 60s, firstly the Ga rich 4x2 then several other 2x4 As-stable reconstructions. It has been shown that at the III:V BEP ratios and substrate temperatures used in this work growth is taking place in a transitional area of the phase diagram for 'in-growth' reconstructions. At higher III:V BEP ratio growth the transition is believed to be direct, from the 'pre-growth' reconstruction to a 4x2 Ga-rich 'in-growth' reconstruction. The surfaces grown with any of the precursors are initially saturated with Ga and then as the As coverage gradually increases the reconstructions change until enough As is present on the surface for usual 2x4 'in-growth' reconstruction to stabilise. However unlike for TMGa, GaAs growth with TEGa proceeds by a non-self limiting growth mode and TEGa rapidly dissociates. The result of this is that TEGa decomposes on top of other TEGa molecules, or their fragments and due to the high flux rate this leads to a 'stacking-up' of Ga on the surface. The presence of excess Ga provides a rapid increase of surface reflectance and then its subsequent decay as the excess Ga is incorporated by the increasing As content of the

  12. Amateurism in an Age of Professionalism: An Empirical Examination of an Irish Sporting Culture: The GAA

    Directory of Open Access Journals (Sweden)

    Ian Keeler

    2013-07-01

    This research study recommends that the GAA adopt an innovative approach, through strategic decision-making, to allow the GAA to maintain its amateur ethos, and, yet, successfully compete in the professional sporting market. The strong links with the community must be both nurtured and enhanced. The GAA and Gaelic games must embrace the challenges that the branding success of foreign sports has brought. Player welfare issues for the elite players must be addressed while continuing to protect the club and its amateur structures. The study looks at the key metrics that are required to evolve the GAA. This entails not only focusing on the perceived importance of the amateur ethos to the GAA, but also developing the marketing, branding and profiling of Gaelic games to enhance the performance of an amateur sporting organization in an era of increased professionalism in sport.

  13. Understanding and Curing Structural Defects in Colloidal GaAs Nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Srivastava, Vishwas [Department of Chemistry; Liu, Wenyong [Department of Chemistry; Janke, Eric M. [Department of Chemistry; Kamysbayev, Vladislav [Department of Chemistry; Filatov, Alexander S. [Department of Chemistry; Sun, Cheng-Jun [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, United States; Lee, Byeongdu [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, United States; Rajh, Tijana [Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, United States; Schaller, Richard D. [Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, United States; Department of; Talapin, Dmitri V. [Department of Chemistry; Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, United States

    2017-02-22

    Nearly three decades since the first report on the synthesis of colloidal GaAs nanocrystals (NCs), the preparation and properties of this material remain highly controversial. Traditional synthetic routes either fail to produce the GaAs phase or result in materials that do not show expected optical properties such as excitonic transitions. In this work, we demonstrate a variety of synthetic routes toward crystalline GaAs NCs. By using a combination of Raman, EXAFS and transient absorption spectroscopies, we conclude that unusual optical properties of 2 colloidal GaAs NCs can be related to the presence of vacancies and lattice disorder. We introduce novel molten salt based annealing approach to alleviate these structural defects and show the emergence of size-dependent excitonic transitions in colloidal GaAs quantum dots.

  14. Magnetophotoluminescence in high purity MOVPE GaAs

    Science.gov (United States)

    Zemon, S. A.; Norris, P. E.; Lambert, G.

    1986-09-01

    Magnetophotoluminescence (MPL) is shown to be useful for the identification of trace acceptor impurities in MOVPE GaAs. Using MPL a trace concentration of zinc acceptors was detected in a sample where the zinc transitions were obscured in zero magnetic field. Acceptor MPL was observed to be insensitive to V/III ratio for values between 17.3 and 54.4. Conduction-band-to-acceptor MPL spectral widths as small as 0.3 meV were found. Resolved Landau level transitions and the magnetic splitting of conduction-band-to-acceptor transitions were observed.

  15. Spin noise spectroscopy on donors in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Bernien, Hannes; Mueller, Georg; Roemer, Michael; Huebner, Jens; Oestreich, Michael [Institute for Solid State Physics, Gottfried Wilhelm Leibniz University Hannover (Germany)

    2009-07-01

    In recent experiments spin noise spectroscopy (SNS) has proven to be a very sensitive technique to study electron spin dynamics in semiconductors at thermal equilibrium. Here we present SNS-measurements on donor bound electrons in very low doped bulk GaAs. In this environment the donors do not interact with each other and form artificial atoms. We discuss the detection of single donor bound electron spins, which should have extremely long spin relaxation times compared to ensemble spin relaxation times. In further experiments the electron bound to the donor will be used to probe and study the local nuclear magnetic field at the donor site.

  16. GaAs vapor-grown bipolar transistors.

    Science.gov (United States)

    Nuese, C. J.; Gannon, J. J.; Dean, R. H.; Gossenberger, H. F.; Enstrom, R. E.

    1972-01-01

    Discussion of an approach for the fabrication of high-temperature GaAs transistors which is centered on the preparation of n-p-n three-layered structures entirely by a vapor-phase growth technique, as described by Tietjen and Amick (1966). The low growth temperature of approximately 750 C is thought to reduce contamination during crystal growth and to contribute to the reasonably high minority-carrier lifetimes obtained for the vapor-grown p-n junctions. The fact that impurity concentrations and layer thicknesses can be precisely controlled for epitaxial layers as thin as 1 micrometer is an important feature of this growth technique.

  17. Study of irradiation defects in GaAs

    International Nuclear Information System (INIS)

    Loualiche, S.

    1982-11-01

    Characterization techniques: C(V) differential capacity, DLTS deep level transient spectroscopy, DDLTS double deep level transient spectroscopy and DLOS deep level optical spectroscopy are studied and theoretical and experimental fundamentals are re-examined. In particular the centres created by ionic or electronic bombardment of p-type GaAs. New quantitative theoretical bases for the C(V) method are obtained. Study of the optical properties of traps due to irradiation using DLOS. The nature of irradiation defects are discussed [fr

  18. Simple intrinsic defects in GaAs : numerical supplement.

    Energy Technology Data Exchange (ETDEWEB)

    Schultz, Peter Andrew

    2012-04-01

    This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

  19. Laser-induced bandgap collapse in GaAs

    Science.gov (United States)

    Siegal, Y.; Glezer, Eli N.; Huang, Li; Mazur, Eric

    1994-05-01

    We present recent time-resolved measurements of the linear dielectric constant of GaAs at 2.2 eV and 4.4 eV following femtosecond laser pulse excitation. In sharp contrast to predictions based on the widely used Drude model, the data show an interband absorption peak coming into resonance first with the 4.4 eV probe photon energy and then with the 2.2 eV probe photon energy, indicating major changes in the band structure. The time scale for these changes ranges from within 100 fs to a few picoseconds, depending on the incident pump pulse fluence.

  20. Advanced On-Board Signal Procesor GaAs Memory.

    Science.gov (United States)

    1983-11-01

    forgetting voltage was VW =2.4-2.5 V. One important parameter Influencing memory cycle times is the minimum pulse width that can write or change the...MRDC41083-29FTR-7 Copy No. 25 0 4 ADVANCED ON-BOARD SIGNAL k) PROCESSOR GaAs MEMORY , FINAL TECHNICAL REPORT FOR THE PERIOD January 21, 1981 through...on the design and fabrication of a 256 bit static memory chip. The development of operational 256 bit memory arrays has been used on three mask sets

  1. Acceptor and donor levels of 3d impurities at interstitial sites in GaAs

    International Nuclear Information System (INIS)

    Scolfaro, L.M.R.; Fazzio, A.

    1988-01-01

    Results are presented for the electronic structure of 3d transition-metal intersititial impurities in GaAs. Both anion and cation intersititial defect sites of high-symmetry are considered. The existence of acceptor nd donor states in the gap for impurities at the anion interstitial site is investigated, including many-electron corrections to the one-electron energy levels. These results show that the trend for the 3d-induced t 2 states is very similar in both tetrahedral interstitial sites. It is found that Co, Fe, Mn and Cr could present donor levels in the gap. Acceptor levels are predicted to occur in the gap only for interstitial Co and Mn. (author) [pt

  2. Computer-Aided Design of Microstrip GaAs Mesfet Amplifiers

    DEFF Research Database (Denmark)

    Nielsen, Niels Ole

    1976-01-01

    Results on computer-aided design of broadband GaAs MESFET amplifiers in microstrip is presented. The analysis of an amplifier is based on measured scattering parameters and a model of the microstrip structure, which includes parasitics and junction effects. The optimized performance of one stage...... amplifiers with lossless distributed matching elements is presented. Realized amplifiers are in good agreement with the theory. One stage amplifiers with a 1 ¿m FET in chip form exhibit 5.8 dB of gain in the range 8-12 GHz, while a gain of 4.5 dB from 4-8 GHz has been obtained with a packaged 1 ¿m FET....

  3. Three-dimensional lattice rotation in GaAs nanowire growth on hydrogen-silsesquioxane covered GaAs (001) using molecular beam epitaxy

    Science.gov (United States)

    Tran, Dat Q.; Pham, Huyen T.; Higashimine, Koichi; Oshima, Yoshifumi; Akabori, Masashi

    2018-05-01

    We report on crystallographic behaviors of inclined GaAs nanowires (NWs) self-crystallized on GaAs (001) substrate. The NWs were grown on hydrogen-silsesquioxane (HSQ) covered substrates using molecular beam epitaxy (MBE). Commonly, the epitaxial growth of GaAs B (B-polar) NWs is prominently observed on GaAs (001); however, we yielded a remarkable number of epitaxially grown GaAs A (A-polar) NWs in addition to the majorly obtained B-polar NWs. Such NW orientations are always accompanied by a typical inclined angle of 35° from (001) plane. NWs with another inclined angle of 74° were additionally observed and attributed to be -oriented, not in direct epitaxial relation with the substrate. Such 74° NWs' existence is related to first-order three-dimensional (3D) lattice rotation taking place at the very beginning of the growth. It turns out that spatially 60° lattice rotation around directions at GaAs seeds is essentially in charge of A- and B-polar 74° NWs. Transmission electron microscope observations reveal a high density of twinning in the B-polar NWs and twin-free characteristic in the A-polar NWs.

  4. Effect of H+ implantation on the optical properties of semi-insulating GaAs crystals in the IR spectral region

    International Nuclear Information System (INIS)

    Klyui, N. I.; Lozinskii, V. B.; Liptuga, A. I.; Dikusha, V. N.; Oksanych, A. P.; Kogdas’, M. G.; Perekhrest, A. L.; Pritchin, S. E.

    2017-01-01

    The optical properties of semi-insulating GaAs crystals subjected to multienergy hydrogen-ion implantation and treatment in a high-frequency electromagnetic field are studied in the infrared spectral region. It is established that such combined treatment provides a means for substantially increasing the transmittance of GaAs crystals to values characteristic of crystals of high optical quality. On the basis of analysis of the infrared transmittance and reflectance data, Raman spectroscopy data, and atomic-force microscopy data on the surface morphology of the crystals, a physical model is proposed to interpret the effects experimentally observed in the crystals. The model takes into account the interaction of radiation defects with the initial structural defects in the crystals as well as the effect of compensation of defect centers by hydrogen during high-frequency treatment.

  5. GaAs Solar Cells Grown by Hydride Vapor-Phase Epitaxy and the Development of GaInP Cladding Layers

    Energy Technology Data Exchange (ETDEWEB)

    Simon, John; Schulte, Kevin L.; Young, David L.; Haegel, Nancy M.; Ptak, Aaron J.

    2016-01-01

    The high cost of high-efficiency III-V photovoltaic devices currently limits them to niche markets. Hydride vapor-phase epitaxy (HVPE) growth of III-V materials recently reemerged as a low-cost, high-throughput alternative to conventional metal- organic vapor-phase epitaxy (MOVPE) growth of high-efficiency solar cells. Previously, we demonstrated unpassivated HVPEgrown GaAs p-n junctions with good quantum efficiency and high open-circuit voltage (Voc). In this work, we demonstrate the growth of GaInPby HVPE for use as a high-quality surface passivation layer to GaAs solar cells. Solar cells grown with GaInP window layers show significantly improved quantum efficiency compared with unpassivated cells, increasing the short-circuit current (JSC) of these low-cost devices. These results show the potential of low-cost HVPE for the growth of high-quality III-V devices.

  6. Ultraviolet Beam Focusing in Gallium Arsenide by Direct Excitation of Surface Plasmon Polaritons

    Directory of Open Access Journals (Sweden)

    Senfeng Lai

    2015-01-01

    Full Text Available This paper proposed that ultraviolet beam could be focused by gallium arsenide (GaAs through direct excitation of surface plasmon polaritons. Both theoretical analysis and computer simulation showed that GaAs could be a reasonably good plasmonic material in the air in the deep ultraviolet waveband. With a properly designed bull’s eye structure etched in GaAs, the ultraviolet electric field could be enhanced to as high as 20 times the incident value, and the full-width-half-maximum (FWHM of the light beam could be shrunk from ~48° to ~6°. As a plasmonic material, GaAs was compared to Ag and Al. Within the studied ultraviolet waveband, the field enhancement in GaAs was much stronger than Ag but not as high as Al.

  7. Photo-irradiation effects on GaAs atomic layer epitaxial growth. GaAs no genshiso epitaxial seicho ni okeru hikari reiki koka

    Energy Technology Data Exchange (ETDEWEB)

    Mashita, M.; Kawakyu, Y.; Sasaki, M.; Ishikawa, H. (Toshiba Corp., Kawasaki (Japan). Research and Development Center)

    1990-08-10

    Single atomic layer epitaxy (ALE) aims at controlling a growing film at a precision of single molecular layer. In this article, it is reported that the growth temperature range of ALE was expanded by the vertical irradiation of KrF exima laser (248 nm) onto the substrate for the ALE growth of GaAs using the metalorganic chemical vapor deposition (MOCVD) method. Thanks for the results of the above experiment, it was demonstrated that the irradiation effect was not thermal, but photochemical. In addition, this article studies the possibility of adsorption layer irradiation and surface irradiation as the photo-irradiation mechanism, and points out that coexistence of both irradiation mechanisms can be considered and, in case of exima laser, strong possibility of direct irradiation of the adsorption layer because of its high power density. Hereinafter, by using both optical growth ALE and thermal growth ALE jointly, the degree of freedom of combination of hetero ALE increases and its application to various material systems becomes possible. 16 refs., 6 figs.

  8. Dynamic grazing incidence fast atom diffraction during molecular beam epitaxial growth of GaAs

    International Nuclear Information System (INIS)

    Atkinson, P.; Eddrief, M.; Etgens, V. H.; Khemliche, H.; Debiossac, M.; Mulier, M.; Lalmi, B.; Roncin, P.; Momeni, A.

    2014-01-01

    A Grazing Incidence Fast Atom Diffraction (GIFAD) system has been mounted on a commercial molecular beam epitaxy chamber and used to monitor GaAs growth in real-time. In contrast to the conventionally used Reflection High Energy Electron Diffraction, all the GIFAD diffraction orders oscillate in phase, with the change in intensity related to diffuse scattering at step edges. We show that the scattered intensity integrated over the Laue circle is a robust method to monitor the periodic change in surface roughness during layer-by-layer growth, with oscillation phase and amplitude independent of incidence angle and crystal orientation. When there is a change in surface reconstruction at the start of growth, GIFAD intensity oscillations show that there is a corresponding delay in the onset of layer-by-layer growth. In addition, changes in the relative intensity of different diffraction orders have been observed during growth showing that GIFAD has the potential to provide insight into the preferential adatom attachment sites on the surface reconstruction during growth.

  9. On the origin of reflectance-anisotropy oscillations during GaAs (0 0 1) homoepitaxy

    Science.gov (United States)

    Ortega-Gallegos, J.; Guevara-Macías, L. E.; Ariza-Flores, A. D.; Castro-García, R.; Lastras-Martínez, L. F.; Balderas-Navarro, R. E.; López-Estopier, R. E.; Lastras-Martínez, A.

    2018-05-01

    We report on the first spectroscopic study of reflectance-anisotropy (RA) oscillations during molecular beam epitaxy (MBE) GaAs homoepitaxy. Real-time RA spectra measured during epitaxial growth were carried out with a recently developed rapid RA multichannel spectrometer with 100 ms per spectrum acquisition time. An analysis of the time-resolved RA spectra shows that RA oscillations are mostly due to the periodic modulation of the surface orthorhombic strain associated to surface reconstruction. Results reported here demonstrate the power of real-time RA spectroscopy as a probe for the study of epitaxial growth processes. In particular, given its sub monolayer surface-strain sensitivity, RA spectroscopy results a very convenient tool to study epitaxial growth mechanisms in real-time with sub monolayer resolution. This capability allows for real-time RA spectroscopy to be used as a probe for the in situ, real-time control of epitaxial growth, with the additional advantage of operating in higher pressure systems such as CVD, where RHEED monitoring cannot be implemented.

  10. Growth of AlGaSb Compound Semiconductors on GaAs Substrate by Metalorganic Chemical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    A. H. Ramelan

    2010-01-01

    Full Text Available Epitaxial AlxGa1-xSb layers on GaAs substrate have been grown by atmospheric pressure metalorganic chemical vapour deposition using TMAl, TMGa, and TMSb. We report the effect of V/III flux ratio and growth temperature on growth rate, surface morphology, electrical properties, and composition analysis. A growth rate activation energy of 0.73 eV was found. For layers grown on GaAs at 580∘C and 600∘C with a V/III ratio of 3 a high quality surface morphology is typical, with a mirror-like surface and good composition control. It was found that a suitable growth temperature and V/III flux ratio was beneficial for producing good AlGaSb layers. Undoped AlGaSb grown at 580∘C with a V/III flux ratio of 3 at the rate of 3.5 μm/hour shows p-type conductivity with smooth surface morphology and its hole mobility and carrier concentration are equal to 237 cm2/V.s and 4.6 × 1017 cm-3, respectively, at 77 K. The net hole concentration of unintentionally doped AlGaSb was found to be significantly decreased with the increased of aluminium concentration. All samples investigated show oxide layers (Al2O3, Sb2O3, and Ga2O5 on their surfaces. In particular the percentage of aluminium-oxide was very high compared with a small percentage of AlSb. Carbon content on the surface was also very high.

  11. X-ray imaging bilinear staggered GaAs detectors

    Energy Technology Data Exchange (ETDEWEB)

    Achmadullin, R.A.; Dvoryankin, V.F. E-mail: vfd217@ire216.msk.su; Dvoryankina, G.G.; Dikaev, Y.M.Yu.M.; Krikunov, A.I.; Kudryashov, A.A.; Panova, T.M.; Petrov, A.G.; Telegin, A.A

    2004-09-21

    The multichannel bilinear X-ray detector based on epitaxial GaAs structures is developed to obtain a digital X-ray image. Each detector operates in photovoltaic mode without reverse bias that enables almost complete elimination of detector noise arising due to leakage currents. The sensitivity range of the epitaxial GaAs photovoltaic X-ray detector covers the effective energies from 8 to 120 keV. A maximum response of the detector operating in the short-circuit mode was observed at an energy of 35 keV and amounted to 30 {mu}A min/(Gy cm{sup 2}). The multichannel detector was made of 1024 pixels with pitch of 0.8 mm. The spatial resolution of double staggered sensor row is twice as high as the resolution of that of single sensor row with the same pitch. Measured spatial resolution is 1.2 line-pairs/mm, contrast sensitivity not worse 1% and dynamic range defined as the ratio of maximum detectable X-ray signal to electronic noise level more than 2000 are received.

  12. X-ray imaging bilinear staggered GaAs detectors

    International Nuclear Information System (INIS)

    Achmadullin, R.A.; Dvoryankin, V.F.; Dvoryankina, G.G.; Dikaev, Y.M.Yu.M.; Krikunov, A.I.; Kudryashov, A.A.; Panova, T.M.; Petrov, A.G.; Telegin, A.A.

    2004-01-01

    The multichannel bilinear X-ray detector based on epitaxial GaAs structures is developed to obtain a digital X-ray image. Each detector operates in photovoltaic mode without reverse bias that enables almost complete elimination of detector noise arising due to leakage currents. The sensitivity range of the epitaxial GaAs photovoltaic X-ray detector covers the effective energies from 8 to 120 keV. A maximum response of the detector operating in the short-circuit mode was observed at an energy of 35 keV and amounted to 30 μA min/(Gy cm 2 ). The multichannel detector was made of 1024 pixels with pitch of 0.8 mm. The spatial resolution of double staggered sensor row is twice as high as the resolution of that of single sensor row with the same pitch. Measured spatial resolution is 1.2 line-pairs/mm, contrast sensitivity not worse 1% and dynamic range defined as the ratio of maximum detectable X-ray signal to electronic noise level more than 2000 are received

  13. Analysis of a Free Surface Film from a Controlled Liquid Impinging Jet over a Rotating Disk Including Conjugate Effects, with and without Evaporation

    Science.gov (United States)

    Sankaran, Subramanian (Technical Monitor); Rice, Jeremy; Faghri, Amir; Cetegen, Baki M.

    2005-01-01

    A detailed analysis of the liquid film characteristics and the accompanying heat transfer of a free surface controlled liquid impinging jet onto a rotating disk are presented. The computations were run on a two-dimensional axi-symmetric Eulerian mesh while the free surface was calculated with the volume of fluid method. Flow rates between 3 and 15 1pm with rotational speeds between 50 and 200 rpm are analyzed. The effects of inlet temperature on the film thickness and heat transfer are characterized as well as evaporative effects. The conjugate heating effect is modeled, and was found to effect the heat transfer results the most at both the inner and outer edges of the heated surface. The heat transfer was enhanced with both increasing flow rate and increasing rotational speeds. When evaporative effects were modeled, the evaporation was found to increase the heat transfer at the lower flow rates the most because of a fully developed thermal field that was achieved. The evaporative effects did not significantly enhance the heat transfer at the higher flow rates.

  14. Impact of built-in fields and contact configuration on the characteristics of ultra-thin GaAs solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Aeberhard, Urs, E-mail: u.aeberhard@fz-juelich.de [IEK-5 Photovoltaik, Forschungszentrum Jülich, D-52425 Jülich (Germany)

    2016-07-18

    We discuss the effects of built-in fields and contact configuration on the photovoltaic characteristics of ultra-thin GaAs solar cells. The investigation is based on advanced quantum-kinetic simulations reaching beyond the standard semi-classical bulk picture concerning the consideration of charge carrier states and dynamics in complex potential profiles. The thickness dependence of dark and photocurrent in the ultra-scaled regime is related to the corresponding variation of both, the built-in electric fields and associated modification of the density of states, and the optical intensity in the films. Losses in open-circuit voltage and short-circuit current due to the leakage of electronically and optically injected carriers at minority carrier contacts are investigated for different contact configurations including electron and hole blocking barrier layers. The microscopic picture of leakage currents is connected to the effect of finite surface recombination velocities in the semi-classical description, and the impact of these non-classical contact regions on carrier generation and extraction is analyzed.

  15. Formation, atomic structure, and electronic properties of GaSb quantum dots in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Timm, R.

    2007-12-14

    In this work, cross-sectional scanning tunneling microscopy and spectroscopy are used for the first time to study the shape, size, strain, chemical composition, and electronic properties of capped GaSb/GaAs QDs at the atomic scale. By evaluating such structural results on a variety of nanostructures built using different epitaxy methods and growth conditions, details on the underlying QD formation processes can be revealed. A cross-over from flat quantum wells (QWs) to optically active QDs can be observed in samples grown by metalorganic chemical vapor deposition (MOCVD) with increasing amount of GaSb, including self-assembled Sb accumulations within a still two-dimensional layer and tiny three-dimensional GaSb islands probably acting as precursor structures. The QWs consist of significantly intermixed material with stoichiometries of maximally 50% GaSb, additionally exhibiting small gaps filled with GaAs. A higher GaSb content up to nearly pure material is found in the QDs, being characterized by small sizes of up to 8 nm baselength and about 2 nm height. In spite of the intermixing, all nanostructures have rather abrupt interfaces, and no significant Sb segregation in growth direction is observed. This changes completely when molecular beam epitaxy (MBE) is used as growth method, in which case individual Sb atoms are found to be distributed over several nm above the nanostructures. Massive group-V atomic exchange processes are causing this strong inter-mixing and Sb segregation during GaAs overgrowth. In combination with the large strain inherent to GaSb/GaAs QDs, this segregation upon overgrowth is assumed to be the reason for a unique structural phenomenon: All MBE-grown QDs, independent of the amount of deposited GaSb, exhibit a ring structure, consisting of a ring body of high GaSb content and a more or less extended central gap filled with GaAs. These rings have formed in a self-assembled way even when the initial GaSb layer was overgrown considerably fast

  16. Surface Tension of Binary Mixtures Including Polar Components Modeled by the Density Gradient Theory Combined with the PC-SAFT Equation of State

    Czech Academy of Sciences Publication Activity Database

    Vinš, Václav; Planková, Barbora; Hrubý, Jan

    2013-01-01

    Roč. 34, č. 5 (2013), s. 792-812 ISSN 0195-928X R&D Projects: GA AV ČR IAA200760905; GA ČR(CZ) GPP101/11/P046; GA ČR GA101/09/1633 Institutional research plan: CEZ:AV0Z20760514 Institutional support: RVO:61388998 Keywords : chemical polarity * gradient theory * surface tension Subject RIV: BJ - Thermodynamics Impact factor: 0.623, year: 2013 http://www.springerlink.com/openurl.asp?genre=article&id=doi:10.1007/s10765-012-1207-z

  17. The Plasmodium falciparum transcriptome in severe malaria reveals altered expression of genes involved in important processes including surface antigen–encoding var genes

    Science.gov (United States)

    Tonkin-Hill, Gerry Q.; Trianty, Leily; Noviyanti, Rintis; Nguyen, Hanh H. T.; Sebayang, Boni F.; Lampah, Daniel A.; Marfurt, Jutta; Cobbold, Simon A.; Rambhatla, Janavi S.; McConville, Malcolm J.; Rogerson, Stephen J.; Brown, Graham V.; Day, Karen P.; Price, Ric N.; Anstey, Nicholas M.

    2018-01-01

    Within the human host, the malaria parasite Plasmodium falciparum is exposed to multiple selection pressures. The host environment changes dramatically in severe malaria, but the extent to which the parasite responds to—or is selected by—this environment remains unclear. From previous studies, the parasites that cause severe malaria appear to increase expression of a restricted but poorly defined subset of the PfEMP1 variant, surface antigens. PfEMP1s are major targets of protective immunity. Here, we used RNA sequencing (RNAseq) to analyse gene expression in 44 parasite isolates that caused severe and uncomplicated malaria in Papuan patients. The transcriptomes of 19 parasite isolates associated with severe malaria indicated that these parasites had decreased glycolysis without activation of compensatory pathways; altered chromatin structure and probably transcriptional regulation through decreased histone methylation; reduced surface expression of PfEMP1; and down-regulated expression of multiple chaperone proteins. Our RNAseq also identified novel associations between disease severity and PfEMP1 transcripts, domains, and smaller sequence segments and also confirmed all previously reported associations between expressed PfEMP1 sequences and severe disease. These findings will inform efforts to identify vaccine targets for severe malaria and also indicate how parasites adapt to—or are selected by—the host environment in severe malaria. PMID:29529020

  18. Croissance epitaxiale de GaAs sur substrats de Ge par epitaxie par faisceaux chimiques

    Science.gov (United States)

    Belanger, Simon

    La situation energetique et les enjeux environnementaux auxquels la societe est confrontee entrainent un interet grandissant pour la production d'electricite a partir de l'energie solaire. Parmi les technologies actuellement disponibles, la filiere du photovoltaique a concentrateur solaire (CPV pour concentrator photovoltaics) possede un rendement superieur et mi potentiel interessant a condition que ses couts de production soient competitifs. La methode d'epitaxie par faisceaux chimiques (CBE pour chemical beam epitaxy) possede plusieurs caracteristiques qui la rendent interessante pour la production a grande echelle de cellules photovoltaiques a jonctions multiples a base de semi-conducteurs III-V. Ce type de cellule possede la meilleure efficacite atteinte a ce jour et est utilise sur les satellites et les systemes photovoltaiques a concentrateur solaire (CPV) les plus efficaces. Une des principales forces de la technique CBE se trouve dans son potentiel d'efficacite d'utilisation des materiaux source qui est superieur a celui de la technique d'epitaxie qui est couramment utilisee pour la production a grande echelle de ces cellules. Ce memoire de maitrise presente les travaux effectues dans le but d'evaluer le potentiel de la technique CBE pour realiser la croissance de couches de GaAs sur des substrats de Ge. Cette croissance constitue la premiere etape de fabrication de nombreux modeles de cellules solaires a haute performance decrites plus haut. La realisation de ce projet a necessite le developpement d'un procede de preparation de surface pour les substrats de germanium, la realisation de nombreuses sceances de croissance epitaxiale et la caracterisation des materiaux obtenus par microscopie optique, microscopie a force atomique (AFM), diffraction des rayons-X a haute resolution (HRXRD), microscopie electronique a transmission (TEM), photoluminescence a basse temperature (LTPL) et spectrometrie de masse des ions secondaires (SIMS). Les experiences ont permis

  19. Characterization of Genotoxic Response to 15 Multiwalled Carbon Nanotubes with Variable Physicochemical Properties Including Surface Functionalizations in the FE1-Muta(TM) Mouse Lung Epithelial Cell Line

    DEFF Research Database (Denmark)

    Jackson, Petra; Kling, Kirsten; Jensen, Keld Alstrup

    2015-01-01

    Carbon nanotubes vary greatly in physicochemical properties. We compared cytotoxic and genotoxic response to 15 multiwalled carbon nanotubes (MWCNT) with varying physicochemical properties to identify drivers of toxic responses. The studied MWCNT included OECD Working Party on Manufactured Nanoma...

  20. MeV Implantation Studies in LPE-Grown GaAs and InP

    Science.gov (United States)

    1989-03-31

    expected in 1991. 1. LPE growth of In-doped GaAs and Characterization (reprint attached ): With an objective of obtaining a high-quality starting...material for the MeV ion- implatation study, we doped GaAs with Indium in a concentration ranging from 1 x 1019 to I x 1020 cm ŗ. Liquid Phase Epitaxy...2. MeV ion damage effect in the strained GaInAs epitaxial layer on GaAs (001) substrates (reprints attached ) : Various Gal.InxAs/GaAs (001) single

  1. Characterization of a Ga-assisted GaAs nanowire array solar cell on si substrate

    DEFF Research Database (Denmark)

    Boulanger, J. P.; Chia, A. C. E.; Wood, B.

    2016-01-01

    A single-junction core-shell GaAs nanowire (NW) solar cell on Si (1 1 1) substrates is presented. A Ga-assisted vapor–liquid–solid growth mechanism was used for the formation of a patterned array of radial p-i-n GaAs NWs encapsulated in AlInP passivation. Novel device fabrication utilizing facet......-dependent properties to minimize passivation layer removal for electrical contacting is demonstrated. Thorough electrical characterization and analysis of the cell is reported. The electrostatic potential distribution across the radial p-i-n junction GaAs NW is investigated by off-axis electron holography....

  2. Exploration of GaAs structures for solid-state detectors

    International Nuclear Information System (INIS)

    Chmil', V.B.; Chuntonov, A.V.; Sergeev, V.A.

    1992-01-01

    The work describes the rsults on systematic search of GaAs structures for the solid-state detectors that should be exploited in a high flux of high energy particles and low energy neutrons. Three types of GaAs structures were found that can separate well a noise and signal spectra. The GaAs samples have been irradiated with a source of γ-ray and results of the response to the action of β-source are also presented. 7 refs.; 6 figs

  3. Mechanism of non-classical light emission from acoustically populated (311)A GaAs quantum wires

    Science.gov (United States)

    Lazić, S.; Hey, R.; Santos, P. V.

    2012-01-01

    We employ surface acoustic waves (SAWs) to control the transfer of photo-generated carriers between interconnected quantum wells and quantum wires (QWRs) grown on pre-patterned (311)A GaAs substrates. Optical studies, carried out under remote acoustic excitation of a single QWR, have shown sharp photoluminescence lines and antibunched photons with tunable emission energy. These features are attributed to recombination of acoustically transported carriers in potential inhomogeneities within the wire. The origin of the photon antibunching is discussed in terms of a ‘bottleneck’ in the number of carriers trapped in the QWR, which restricts the number of recombination events per SAW cycle. We propose a model for antibunching based on the trapping of carriers induced by the SAW piezoelectric field in states at the interface between the GaAs QWR and the AlGaAs barriers. Non-classical light is emitted during the subsequent release of the trapped carriers into the recombination centers within the wire. The spatial distribution of the emitting recombination centers is estimated using time-resolved measurements.

  4. Interface structure and composition of MoO3/GaAs(0 0 1)

    Science.gov (United States)

    Sarkar, Anirban; Ashraf, Tanveer; Grafeneder, Wolfgang; Koch, Reinhold

    2018-04-01

    We studied growth, structure, stress, oxidation state as well as surface and interface structure and composition of thermally-evaporated thin MoO3 films on the technologically important III/V-semiconductor substrate GaAs(0 0 1). The MoO3 films grow with Mo in the 6+  oxidation state. The electrical resistance is tunable by the oxygen partial pressure during deposition from transparent insulating to semi-transparant halfmetallic. In the investigated growth temperature range (room temperature to 200 °C) no diffraction spots are detected by x-ray diffraction. However, high resolution transmission electron microscopy reveals the formation of MoO3 nanocrystal grains with diameters of 5–8 nm. At the interface a  ≈3 nm-thick intermediate layer has formed, where the single-crystal lattice of GaAs gradually transforms to the nanocrystalline MoO3 structure. This interpretation is corroborated by our in situ and real-time stress measurements evidencing a two-stage growth process as well as by elemental interface analysis revealing coexistance of Ga, As, Mo, and oxygen in a intermediate layer of 3–4 nm.

  5. Optimization of wave-guided luminescence for higher efficiency of bifacial thin-film microscale GaAs solar cells

    Science.gov (United States)

    Shen, Ling; Shen, Yifeng; Li, Feng

    2018-01-01

    In pursuit of capturing more wave-guided luminescence for surface-printed bifacial GaAs μ-cells, the pyramid structure has been incorporated with specular back side reflector (BSR) to change the direction of photon propagation. Based on ray tracing model, the calculated photon capturing efficiency of GaAs μ-cells from back side via pyramid, dependent on the parameters of pyramid structure, achieve the largest 1.7× increase for dye absorption peak of 480 nm compared to the case without pyramid. More significantly, the short circuit current in experiment has been improved from original 16.5 mA/cm2 to 23.75 mA/cm2 for the AM 1.5G solar spectrum. Further experiment demonstrates that the optimized pyramid structure enables the integrated luminescent intensity to reach ∼3× increase in a smaller distance of optical transport, which means the advantages in photon capturing efficiency for cells with higher aspect ratio. The calculation further confirms that the cells with higher aspect ratio, among all cells with the same area, realize the higher concentration ratio for the same geometric gain. This provides a guideline for design of cell geometries to guarantee a higher power output in terms of cell modules.

  6. Capacitance transients in p-type GaAs MOS structures and application to lifetime mapping during solar cell fabrication

    Science.gov (United States)

    Vitale, G.; Loferski, J. J.; Ercil, Y.

    1979-01-01

    Fabrication on p-type GaAs of MOS structures in which the quality of the oxide is such that the surface can be driven into deep inversion by a voltage pulse is reported. The capacitance transients in such MOS capacitors as a function of step amplitude and temperature were measured and the transients were analyzed by an extension of a method for silicon. The oxides were produced by plasma oxidation on an LPE-grown p-type GaAs specimen with N sub A of 3x10 to the 17th power/cu cm. The capacitors were produced by depositing 50 microns-diameter gold dots over the native oxide and, therefore, the lifetime is localized to the area under the dot. The method permits extraction of both the bulk lifetime and the interface recombination velocity. These parameters on samples with different N sub A were measured and a correlation between tau sub g and N sub A was found.

  7. Structural characterization of ZnTe grown by atomic-layer-deposition regime on GaAs and GaSb (100) oriented substrates

    Energy Technology Data Exchange (ETDEWEB)

    Castillo-Ojeda, Roberto Saúl [Universidad Politécnica de Pachuca (Mexico); Díaz-Reyes, Joel; Peralta-Clara, María de la Cruz; Veloz-Rendón, Julieta Salomé, E-mail: joel_diaz_reyes@hotmail.com [Centro de Investigación en Biotecnología Aplicada, Instituto Politécnico Nacional, Tlaxcala, (Mexico); Galván-Arellano, Miguel [Centro de Investigación y de Estudios Avanzados, Instituto Politécnico Nacional (Mexico); Anda-Salazar, Francisco de [Instituto de Investigación en Comunicación Óptica, Universidad Autónoma de San Luis Potosí (Mexico); Contreras-Rascon, Jorge Indalecio [Departamento de Física, Universidad de Sonora (Mexico)

    2017-10-15

    This work presents the characterization of ZnTe nano layers grown on GaAs and GaSb (100) substrates by the Atomic Layer Deposition (ALD) regime. Under certain conditions, the alternating exposition of a substrate surface to the element vapours makes possible the growth of atomic layers in a reactor where the atmosphere is high-purity hydrogen. ZnTe was grown simultaneously on GaAs and GaSb at the same run, allowing, a comparison between the effects produced by the superficial processes due to the different used substrates, thereby eliminating possible unintended changes of growth parameters. Nano layers on GaSb maintained their shiny appearance even at temperatures near 420°C. It was found that for exposure times below 2.5 s there was not growth on GaAs, while for GaSb the shortest time was 1.5 s at 385°C. By HRXRD the peak corresponding to (004) diffraction plane of ZnTe was identified and investigated, the FWHM resulted very wide (600-800 arcsec) indicating a highly distorted lattice mainly due to mosaicity. Raman scattering shows the peak corresponding to LO-ZnTe, which is weak and slightly shifted in comparison with the reported for the bulk ZnTe at 210 cm{sup -1}. Additionally, the measurements suggest that the crystalline quality have a dependence with the growth temperature. (author)

  8. Effect of stoichiometry on defect distribution in cubic GaN grown on GaAs by plasma-assisted MBE

    Energy Technology Data Exchange (ETDEWEB)

    Ruvimov, S.; Liliental-Weber, Z.; Washburn, J. [California Univ., Parlier, CA (United States). Kearney Agricultural Center; Drummond, T.J.; Hafish, M.; Lee, S.R. [Sandia National Labs., Albuquerque, NM (United States)

    1996-12-31

    High resolution electron microscopy was used to study the structure of {beta}-GaN epilayers grown on (001) GaAs substrates by plasma- assisted molecular-beam-epitaxy. The rf plasma source was used to promote chemically active nitrogen. The layer quality was shown to depend on growth conditions (Ga flux and N{sub 2} flow for fixed rf power). The best quality of GaN layers was achieved by ``stoichiometric`` growth; Ga-rich layers contain a certain amount of the wurtzite phase. GaN layers contain a high density of stacking faults which drastically decreases toward the GaN surface. Stacking faults are anisotropically distributed in the GaN layer; the majority intersect the interface along lines parallel to the ``major flat`` of the GaAs substrate. This correlates well with the observed anisotropy in the intensity distribution of x-ray reflexions. Formation of stacking faults are often associated with atomic steps at the GaN- GaAs interfaces.

  9. Structure, magnetism, and interface properties of epitactical thin Fe and FePt films on GaAs(001) substrates; Struktur, Magnetismus und Grenzflaecheneigenschaften epitaktischer duenner Fe- und FePt-Filme auf GaAs(001)-Substraten

    Energy Technology Data Exchange (ETDEWEB)

    Schuster, Ellen Ursula

    2007-12-17

    The research in this thesis is focused on the study of the Fe spin structure and interface magnetism of thin epitaxial Fe layers or epitaxial FePt alloy films with chemical L1{sub 0} order on GaAs(001) surfaces. The main method of investigation was isotope-specific conversion electron Moessbauer spectroscopy (CEMS) combined with the {sup 57}Fe probe-layer technique in the temperature range of 4.2-300 K. The film structure was studied using electron diffraction (RHEED) and X-ray diffraction (XRD). The chemical order parameter S determined by XRD was found to increase with rising growth temperature, T{sub S}, to a maximum value of 0.71, until long range order is destroyed at T{sub S}>350 C by alloying with the substrate. As an important result a linear correlation between short-range order (revealed by the relative spectral area of the L1{sub 0} phase) and long-range order S was observed. The observed perpendicular Fe spin texture, characterized by the mean tilting angle left angle {theta} right angle of the Fe spins (relative to the film normal direction), was found to correlate with the L1{sub 0} phase content and with S. Furthermore, epitaxial Fe(001) films on GaAs(001)-(4 x 6) and on GaAs(001)-LED surfaces were grown successfully. In the initial stage of Fe film growth non-monotonous behavior of the in-plane lattice parameter was observed by RHEED. The magnetic hyperfine field distributions P(B{sub hf}) at the Fe/GaAs interface extracted from CEMS spectra for T{sub S}=-140 C or room temperature (RT) were found to be very similar. The observed large mean hyperfine fields of left angle B{sub hf} right angle {approx}25-27 T at the interface indicate the presence of high average Fe moments of 1.7-1.8 {mu}{sub B}. Nonmagnetic interface layers either can be excluded (Fe/GaAs) or are very thin (0.5 ML,Fe/GaAs-LED). Owing to its island structure an ultrathin (1.9 ML thick) uncoated Fe(001) film on GaAs(001)-(4 x 6) shows superparamagnetism with a blocking temperature of

  10. Quantum efficiency temporal response and lifetime of a GaAs cathode in SRF electron gun

    Energy Technology Data Exchange (ETDEWEB)

    Wang, E.; Ben-Zvi, I.; Kewisch, J.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

    2010-05-23

    RF electron guns with a strained super lattice GaAs cathode can generate polarized electron beam of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface. In a normal conducting RF gun, the extremely high vaccum required by these cathodes can not be met. We report on an experiment with a superconducting SRF gun, which can maintain a vacuum of nearly 10-12 torr because of cryo-pumping at the temperature of 4.2K. With conventional activation, we obtained a QE of 3% at 532 nm, with lifetime of nearly 3 days in the preparation chamber. We plan to use this cathode in a 1.3 GHz 1/2 cell SRF gun to study its performance. In addition, we studied the multipacting at the location of cathode. A new model based on the Forkker-Planck equation which can estimate the bunch length of the electron beam is discussed in this paper. Future particle accelerators such as eRHIC and ILC require high brightness, high current polarized electrons Recently, using a superlattice crystal, the maximum polarization of 95% was reached. Activation with Cs,O lowers the electron affinity and makes it energetically possible for all the electrons excited in to the conduction band and reach the surface to escape into the vacuum. Presently the polarized electron sources are based on DC gun, such as that at the CEBAF at Jlab. In these devices, the life time of the cathode is extended due to the reduced back bombardment in their UHV conditions. However, the low accelerating gradient of the DC guns lead to poor longitudinal emittance. The higher accelerating gradient of the RF gun generates low emittance beams. Superconducting RF guns combine the excellent vacuum conditions of the DC guns with the higher accelerating gradients of the RF guns and provide potentially a long lived cathode with very low transverse and longitudinal emittance. In our work at BNL, we successfully activated the GaAs. The quantum efficient is 3% at 532 nm and is

  11. Quantum efficiency temporal response and lifetime of a GaAs cathode in SRF electron gun

    International Nuclear Information System (INIS)

    Wang, E.; Ben-Zvi, I.; Kewisch, J.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

    2010-01-01

    RF electron guns with a strained super lattice GaAs cathode can generate polarized electron beam of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface. In a normal conducting RF gun, the extremely high vaccum required by these cathodes can not be met. We report on an experiment with a superconducting SRF gun, which can maintain a vacuum of nearly 10-12 torr because of cryo-pumping at the temperature of 4.2K. With conventional activation, we obtained a QE of 3% at 532 nm, with lifetime of nearly 3 days in the preparation chamber. We plan to use this cathode in a 1.3 GHz 1/2 cell SRF gun to study its performance. In addition, we studied the multipacting at the location of cathode. A new model based on the Forkker-Planck equation which can estimate the bunch length of the electron beam is discussed in this paper. Future particle accelerators such as eRHIC and ILC require high brightness, high current polarized electrons Recently, using a superlattice crystal, the maximum polarization of 95% was reached. Activation with Cs,O lowers the electron affinity and makes it energetically possible for all the electrons excited in to the conduction band and reach the surface to escape into the vacuum. Presently the polarized electron sources are based on DC gun, such as that at the CEBAF at Jlab. In these devices, the life time of the cathode is extended due to the reduced back bombardment in their UHV conditions. However, the low accelerating gradient of the DC guns lead to poor longitudinal emittance. The higher accelerating gradient of the RF gun generates low emittance beams. Superconducting RF guns combine the excellent vacuum conditions of the DC guns with the higher accelerating gradients of the RF guns and provide potentially a long lived cathode with very low transverse and longitudinal emittance. In our work at BNL, we successfully activated the GaAs. The quantum efficient is 3% at 532 nm and is expected

  12. Observation of the anomalous Hall effect in GaAs

    International Nuclear Information System (INIS)

    Miah, M Idrish

    2007-01-01

    Devices for the direct detection of the spin current, based on the anomalous Hall effect (AHE), are fabricated on n-type GaAs bulk semiconductor materials. The AHE is observed in the device when the photoinduced spin-polarized electrons are injected into it, and it is found that the effect depends on the applied electric field. The origin of the field-dependent observed Hall effect is discussed based on the D'yakonov-Perel' (DP) spin relaxation mechanism. The spin-dependent Hall effect is also found to be enhanced with increasing doping concentration. The present experimental results might have potential applications in semiconductor spintronic devices since the effect is closely related to the spin Hall effect

  13. Observation of the anomalous Hall effect in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Miah, M Idrish [Nanoscale Science and Technology Centre, School of Science, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong, Chittagong - 4331 (Bangladesh)

    2007-03-21

    Devices for the direct detection of the spin current, based on the anomalous Hall effect (AHE), are fabricated on n-type GaAs bulk semiconductor materials. The AHE is observed in the device when the photoinduced spin-polarized electrons are injected into it, and it is found that the effect depends on the applied electric field. The origin of the field-dependent observed Hall effect is discussed based on the D'yakonov-Perel' (DP) spin relaxation mechanism. The spin-dependent Hall effect is also found to be enhanced with increasing doping concentration. The present experimental results might have potential applications in semiconductor spintronic devices since the effect is closely related to the spin Hall effect.

  14. Efficacy of humidity retention bags for the reduced adsorption and improved cleaning of tissue proteins including prion-associated amyloid to surgical stainless steel surfaces.

    Science.gov (United States)

    Secker, T J; Pinchin, H E; Hervé, R C; Keevil, C W

    2015-01-01

    Increasing drying time adversely affects attachment of tissue proteins and prion-associated amyloid to surgical stainless steel, and reduces the efficacy of commercial cleaning chemistries. This study tested the efficacy of commercial humidity retention bags to reduce biofouling on surgical stainless steel and to improve subsequent cleaning. Surgical stainless steel surfaces were contaminated with ME7-infected brain homogenates and left to dry for 15 to 1,440 min either in air, in dry polythene bags or within humidity retention bags. Residual contamination pre/post cleaning was analysed using Thioflavin T/SYPRO Ruby dual staining and microscope analysis. An increase in biofouling was observed with increased drying time in air or in sealed dry bags. Humidity retention bags kept both protein and prion-associated amyloid minimal across the drying times both pre- and post-cleaning. Therefore, humidity bags demonstrate a cheap, easy to implement solution to improve surgical instrument reprocessing and to potentially reduce associated hospital acquired infections.

  15. Renner-Teller effect in linear tetra-atomic molecules. I. Variational method including couplings between all degrees of freedom on six-dimensional potential energy surfaces

    Science.gov (United States)

    Jutier, L.; Léonard, C.; Gatti, F.

    2009-04-01

    For electronically degenerate states of linear tetra-atomic molecules, a new method is developed for the variational treatment of the Renner-Teller and spin-orbit couplings. The approach takes into account all rotational and vibrational degrees of freedom, the dominant couplings between the corresponding angular momenta as well as the couplings with the electronic and electron spin angular momenta. The complete rovibrational kinetic energy operator is expressed in Jacobi coordinates, where the rovibrational angular momenta ĴN have been replaced by L̂ez-Ŝ and the spin-orbit coupling has been described by the perturbative term ASO×L̂ezṡŜz. Attention has been paid on the electronic wave functions, which require additional phase for linear tetra-atomic molecules. Our implemented rovibrational basis functions and the integration of the different parts of the total Hamiltonian operator are described. This new variational approach is tested on the electronic ground state X Π2u of HCCH+ for which new six-dimensional potential energy surfaces have been computed using the internally contracted multireference configuration interaction method and the cc-pV5Z basis set. The calculated rovibronic energies and their comparisons with previous theoretical and experimental works are presented in the next paper.

  16. Development of symmetric composition-gradient materials including hard particles in its surface layer; Hyosobu ni koshitsu ryushi wo fukumu taishogata sosei keisha zairyo no kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-01

    Development of new materials with both thermal resistance and thermal shock resistance was studied on the basis of symmetric ceramics/metal/ceramics gradient composition. Al2O3/TiC/Ni/TiC/Al2O3 was used as material model of basic composition, and the system was selected where WC-Co system alloy hard particles were dispersed into the Al2O3 ceramic surface layer. The layered material was sintered in N2 gas atmosphere by SHS/HIP method using exothermic caused by nitriding reaction. Since cracks were generated in some specimens of 5-layer structure, improved specimens of 7-layer structure were prepared. To examine the effect of a particle size on toughness, WC-Co system alloy specimens with different particle sizes were also prepared. As a result, no cracks were found, and residual stress and fracture toughness were affected by particle size. In addition, the following were studied: technique of mass production, observation of fine structures, analysis of thermal stress, thermal shock resistance, and friction and abrasion characteristics. 13 refs., 65 figs., 15 tabs.

  17. Determination of drugs in surface water and wastewater samples by liquid chromatography-mass spectrometry: Methods and preliminary results including toxicity studies with Vibrio fischeri

    Science.gov (United States)

    Farre, M.; Ferrer, I.; Ginebreda, A.; Figueras, M.; Olivella, L.; Tirapu, L.; Vilanova, M.; Barcelo, D.

    2001-01-01

    In the present work a combined analytical method involving toxicity and liquid chromatography-electrospray ionization-mass spectrometry (LC-ESI-MS) was developed for the determination of pharmaceutical compounds in water samples. The drugs investigated were the analgesics: ibuprofen, ketoprofen, naproxen, and diclofenac, the decomposition product of the acetyl salicylic acid: salicylic acid and one lipid lowering agent, gemfibrozil. The selected compounds are acidic substances, very polar and all of them are analgesic compounds that can be purchased without medical prescription. The developed protocol consisted, first of all, on the use Microtox?? and ToxAlert??100 toxicity tests with Vibrio fischeri for the different pharmaceutical drugs. The 50% effective concentration (EC50) values and the toxicity units (TU) were determined for every compound using both systems. Sample enrichment of water samples was achieved by solid-phase extraction procedure (SPE), using the Merck LiChrolut?? EN cartridges followed by LC-ESI-MS. Average recoveries loading 1 l of samples with pH=2 varied from 69 to 91% and the detection limits in the range of 15-56 ng/l. The developed method was applied to real samples from wastewater and surface-river waters of Catalonia (north-east of Spain). One batch of samples was analyzed in parallel also by High Resolution Gas Chromatography coupled with Mass Spectrometry (HRGC-MS) and the results have been compared with the LC-ESI-MS method developed in this work. ?? 2001 Elsevier Science B.V. All rights reserved.

  18. Drone Use in Monioring Open Ocean Surface Debris, Including Paired Manta and Tucker Trawls for Relateing Sea State to Vertical Debris Distribution

    Science.gov (United States)

    Lattin, G.

    2016-02-01

    Monitoring debris at sea presents challenges not found in beach or riverine habitats, and is typically done with trawl nets of various apertures and mesh sizes, which limits the size of debris captured and the area surveyed. To partially overcome these limitations in monitoring floating debris, a Quadcopter drone with video transmitting and recording capabilities was deployed at the beginning and the end of manta trawl transects within the North Pacific Subtropical Gyre's eastern convergence zone. Subsurface tucker trawls at 10 meters were conducted at the same time as the manta trawls, in order to assess the effect of sea state on debris dispersal. Trawls were conducted on an 11 station grid used repeatedly since 1999. For drone observations, the operator and observer were stationed on the mother ship while two researchers collected observed debris using a rigid inflatable boat (RIB). The drone was flown to a distance of approximately 100 meters from the vessel in a zigzag or circular search pattern. Here we examine issues arising from drone deployment during the survey: 1) relation of area surveyed by drone to volume of water passing through trawl; 2) retrieval of drone-spotted and associated RIB spotted debris. 3) integrating post- flight image analysis into retrieved debris quantification; and 4) factors limiting drone effectiveness at sea. During the survey, debris too large for the manta trawl was spotted by the drone, and significant debris not observed using the drone was recovered by the RIB. The combination of drone sightings, RIB retrieval, and post flight image analysis leads to improved monitoring of debris at sea. We also examine the issue of the distribution of floating debris during sea states varying from 0-5 by comparing quantities from surface manta trawls to the tucker trawls at a nominal depth of 10 meters.

  19. Development of GaAs Detectors for Physics at the LHC

    CERN Multimedia

    Chu, Zhonghua; Krais, R; Rente, C; Syben, O; Tenbusch, F; Toporowsky, M; Xiao, Wenjiang; Cavallini, A; Fiori, F; Edwards, M; Geppert, R; Goppert, R; Haberla, C; Hornung, M F; Irsigler, R; Rogalla, M; Beaumont, S; Raine, C; Skillicorn, I; Margelevicius, J; Meshkinis, S; Smetana, S; Jones, B; Santana, J; Sloan, T; Zdansky, K; Alexiev, D; Donnelly, I J; Canali, C; Chiossi, C; Nava, F; Pavan, P; Kubasta, J; Tomiak, Z; Tchmil, V; Tchountonov, A; Tsioupa, I; Dogru, M; Gray, R; Hou, Yuqian; Manolopoulos, S; Walsh, S; Aizenshtadt, G; Budnitsky, D L; Gossen, A; Khludkov, S; Koretskaya, O B; Okaevitch, L; Potapov, A; Stepanov, V E; Tolbanov, O; Tyagev, A; Matulionis, A; Pozela, J; Kavaliauskiene, G; Kazukauskas, V; Kiliulis, R; Rinkevicius, V; Slenys, S; Storasta, J V

    2002-01-01

    % RD-8 Development of GaAs Detectors for Physics at the LHC \\\\ \\\\The aims of the collaboration are to investigate the available material options, performance and limitations of simple pad, pixel and microstrip GaAs detectors for minimum ionising particles with radiation hardness and speed which are competitive with silicon detectors. This new technology was originally developed within our university laboratories but now benefits from increasing industrial interest and collaboration in detector fabrication. Initial steps have also been taken towards the fabrication of GaAs preamplifiers to match the detectors in radiation hardness. The programme of work aims to construct a demonstration detector module for an LHC forward tracker based on GaAs.

  20. Growth and characteristics of p-type doped GaAs nanowire

    Science.gov (United States)

    Li, Bang; Yan, Xin; Zhang, Xia; Ren, Xiaomin

    2018-05-01

    The growth of p-type GaAs nanowires (NWs) on GaAs (111) B substrates by metal-organic chemical vapor deposition (MOCVD) has been systematically investigated as a function of diethyl zinc (DEZn) flow. The growth rate of GaAs NWs was slightly improved by Zn-doping and kink is observed under high DEZn flow. In addition, the I–V curves of GaAs NWs has been measured and the p-type dope concentration under the II/III ratio of 0.013 and 0.038 approximated to 1019–1020 cm‑3. Project supported by the National Natural Science Foundation of China (Nos. 61376019, 61504010, 61774021) and the Fund of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), China (Nos. IPOC2017ZT02, IPOC2017ZZ01).

  1. Photovoltaic X-ray detectors based on epitaxial GaAs structures

    Energy Technology Data Exchange (ETDEWEB)

    Achmadullin, R.A. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Artemov, V.V. [Shubnikov Institute of Crystallography, Russian Academy of Sciences, 59 Leninski pr., Moscow B-333, 117333 (Russian Federation); Dvoryankin, V.F. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation)]. E-mail: vfd217@ire216.msk.su; Dvoryankina, G.G. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Dikaev, Yu.M. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Ermakov, M.G. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Ermakova, O.N. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Chmil, V.B. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation); Holodenko, A.G. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation); Kudryashov, A.A.; Krikunov, A.I.; Petrov, A.G.; Telegin, A.A. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Vorobiev, A.P. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation)

    2005-12-01

    A new type of the photovoltaic X-ray detector based on epitaxial p{sup +}-n-n'-n{sup +} GaAs structures which provides a high efficiency of charge collection in the non-bias operation mode at room temperature is proposed. The GaAs epitaxial structures were grown by vapor-phase epitaxy on heavily doped n{sup +}-GaAs(1 0 0) substrates. The absorption efficiency of GaAs X-ray detector is discussed. I-V and C-V characteristics of the photovoltaic X-ray detectors are analyzed. The built-in electric field profiles in the depletion region of epitaxial structures are measured by the EBIC method. Charge collection efficiency to {alpha}-particles and {gamma}-radiation are measured. The application of X-ray detectors is discussed.

  2. High Purity GaAs Far IR Photoconductor With Enhanced Quantum Efficieny, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This proposal introduces an innovative concept aimed to significantly enhance the quantum efficiency of a far-infrared GaAs photoconductor and achieve sensitivity...

  3. Initial test of an rf gun with a GaAs cathode installed

    International Nuclear Information System (INIS)

    Aulenbacher, K.; Bossart, R.; Braun, H.

    1996-09-01

    The operation of an rf gun with a GaAs crystal installed as the cathode has been tested in anticipation of eventually producing a polarized electron beam for a future e + /e - collider using an rf photoinjector

  4. Transport and magnetic properties of Mn- and Mg-implanted GaAs layers

    International Nuclear Information System (INIS)

    Kulbachinskii, V.A.; Lunin, R.A.; Gurin, P.V.; Perov, N.S.; Sheverdyaeva, P.M.; Danilov, Yu.A.

    2006-01-01

    Mn-doped GaAs layers were fabricated by direct ion implantation into semi-insulating GaAs (100) substrates. The implanted samples were annealed at temperatures T a =700-800 o C. At these temperatures MnAs clusters are formed in GaAs due to decay of the supersaturated solid solution of Mn in GaAs. Additional Mg ion implantation was used to provide an enhancement of p-type doping in (Ga,Mn)As layers. Temperature dependence of resistance was measured between 4.2 and 300K, and the Hall effect was measured at temperatures of 4.2-200K. Anomalous Hall effect and ferromagnetic behavior have been found for all samples. An enhanced positive magnetoresistance was also observed at T>30K

  5. Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

    Directory of Open Access Journals (Sweden)

    Takeo Ohno and Yutaka Oyama

    2012-01-01

    Full Text Available In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE, in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm-2. They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor.

  6. CMOS compatible route for GaAs based large scale flexible and transparent electronics

    KAUST Repository

    Nour, Maha A.

    2014-08-01

    Flexible electronics using gallium arsenide (GaAs) for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. Here we describe a state-of-the-art CMOS compatible batch fabrication process of transforming traditional electronic circuitry into large-area flexible, semitransparent platform. We show a simple release process for peeling off 200 nm of GaAs from 200 nm GaAs/300 nm AlAs stack on GaAs substrate using diluted hydrofluoric acid (HF). This process enables releasing a single top layer compared to peeling off all layers with small sizes at the same time. This is done utilizing a network of release holes which contributes to the better transparency (45 % at 724 nm wavelength) observed.

  7. Pulsed laser heating of silicon-nitride capped GaAs: Optical properties at high temperature

    Science.gov (United States)

    Bhat, A.; Yao, H. D.; Compaan, A.; Horak, A.; Rys, A.

    1988-09-01

    The optical properties of silicon nitride and gallium arsenide were studied at temperatures up to and beyond the melting point of GaAs by means of laser heating. XeCl excimer and pulsed dye laser pulses, ˜10 ns in duration, were used to heat the semiconductor under nitride capping layers of varying thickness. The transient reflectivity response at 514.5 nm was used together with a multilayer interference analysis to obtain the optical constants of solid and molten GaAs and of solid Si3N4 near the 1513-K melting point of GaAs. In addition, we report the melt duration as a function of laser pulse energy for GaAs with and without capping layers.

  8. Basic mechanisms study for MIS solar cell structures on GaAs

    Science.gov (United States)

    Fonash, S. J.

    1978-01-01

    The solar cell structure examined is the MIS configuration on (n) GaAs. The metal room temperature oxide/(n) GaAs materials system was studied. Metals with electronegativities varying from 2.4 (Au) to 1.5 (Al) were used as the upper electrode. The thinnest metallization that did not interfere with the measurement techniques (by introducing essentially transmission line series resistance problems across a device) was used. Photovoltaic response was not optimized.

  9. Microhardness of epitaxial layers of GaAs doped with rare earths

    International Nuclear Information System (INIS)

    Kulish, U.M.; Gamidov, Z.S.; Kuznetsova, I.Yu.; Petkeeva, L.N.; Borlikova, G.V.

    1989-01-01

    Results of the study of microhardness of GaAS layer doped by certain rare earths - Gd, Tb, Dy - are presented. The assumption is made that the higher is the value of the first potential of rare earth impurity ionization (i.e. the higher is the filling of 4f-shell), the lower is the effect of the element on electric and mechanical properties of GaAs epitaxial layers

  10. Super-Lattice Light Emitting Diodes (SLEDS) on GaAs

    Science.gov (United States)

    2016-03-31

    material [5]. Even after wafer distributors began selling GaSb substrates, semi- insulating GaSb and InAs substrates were, and are, not available for MBE... driver circuits on the front side, and another where LED array wafers are wafer bonded with RIIC wafers. If a successful approach can be reached a...this work, we describe two alternative approaches where LED arrays are grown on the backside of GaAs substrates with prefabricated GaAs driver

  11. Capacitance-voltage measurements in GaAs thin-film epitaxial structures

    Directory of Open Access Journals (Sweden)

    Gorev N. B.

    2009-10-01

    Full Text Available It is shown that capacitance–voltage characteristics that feature steeply dropping regions, in particular those of GaAs thin-film structures, may be measured at moderately small amplitudes of the measuring ac voltage (of the order of 100 mV at the expense of taking measurements at two different amplitudes. This conclusion is confirmed by the results of numerical calculation of the apparent capacitance of GaAs epitaxial structures.

  12. Temperature and 8 MeV electron irradiation effects on GaAs solar cells

    Indian Academy of Sciences (India)

    GaAs solar cell parameters up to an electron dose of 100 kGy, exhibiting good tolerance for electrons of 8 MeV energy. Keywords. GaAs solar cell; temperature; electron irradiation; current–voltage charac- teristics; capacitance–frequency characteristics; efficiency. PACS Nos 29.25.Bx; 61.82.Fk; 82.47.Jk; 42.79.Ek. 1.

  13. High quality superconducting NbN thin films on GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Marsili, Francesco; Fiore, Andrea [COBRA Research Institute, Eindhoven University of Technology, PO Box 513, NL-5600MB Eindhoven (Netherlands); Gaggero, Alessandro; Leoni, Roberto [Istituto di Fotonica e Nanotecnologie (IFN), CNR, via Cineto Romano 42, I-00156 Roma (Italy); Li, Lianhe H; Surrente, Alessandro [Institute of Photonics and Quantum Electronics (IPEQ), Ecole Polytechnique Federale de Lausanne (EPFL), Station 3, CH-1015 Lausanne (Switzerland); Levy, Francis, E-mail: francesco.marsili@epfl.c [Institute of Condensed Matter Physics (IPMC), Ecole Polytechnique Federale de Lausanne (EPFL), Station 3, CH-1015 Lausanne (Switzerland)

    2009-09-15

    A very promising way to increase the detection efficiency of nanowire superconducting single-photon detectors (SSPDs) consists in integrating them with advanced optical structures such as distributed Bragg reflectors (DBRs) and optical waveguides. This requires transferring the challenging SSPD technology from the usual substrates, i.e. sapphire and MgO, to an optical substrate like GaAs, on which DBRs and waveguides can be easily obtained. Therefore, we optimized the deposition process of few-nm thick superconducting NbN films on GaAs and AlAs/GaAs-based DBRs at low temperatures (substrate temperature T{sub S} = 400 {sup 0}C), in order to prevent As evaporation. NbN films ranging from 150 to 3 nm in thickness were then deposited on single-crystal MgO, GaAs, MgO-buffered GaAs and DBRs by current-controlled DC magnetron sputtering (planar, circular, balanced configuration) of Nb in an Ar+N{sub 2} plasma. 5.5 nm thick NbN films on GaAs exhibit T{sub C} = 10.7 K, {Delta}T{sub C} = 1.1 K and RRR = 0.7. The growth of such high quality thin NbN films on GaAs and DBRs has never been reported before.

  14. Visualization of carrier dynamics in p(n)-type GaAs by scanning ultrafast electron microscopy.

    Science.gov (United States)

    Cho, Jongweon; Hwang, Taek Yong; Zewail, Ahmed H

    2014-02-11

    Four-dimensional scanning ultrafast electron microscopy is used to investigate doping- and carrier-concentration-dependent ultrafast carrier dynamics of the in situ cleaved single-crystalline GaAs(110) substrates. We observed marked changes in the measured time-resolved secondary electrons depending on the induced alterations in the electronic structure. The enhancement of secondary electrons at positive times, when the electron pulse follows the optical pulse, is primarily due to an energy gain involving the photoexcited charge carriers that are transiently populated in the conduction band and further promoted by the electron pulse, consistent with a band structure that is dependent on chemical doping and carrier concentration. When electrons undergo sufficient energy loss on their journey to the surface, dark contrast becomes dominant in the image. At negative times, however, when the electron pulse precedes the optical pulse (electron impact), the dynamical behavior of carriers manifests itself in a dark contrast which indicates the suppression of secondary electrons upon the arrival of the optical pulse. In this case, the loss of energy of material's electrons is by collisions with the excited carriers. These results for carrier dynamics in GaAs(110) suggest strong carrier-carrier scatterings which are mirrored in the energy of material's secondary electrons during their migration to the surface. The approach presented here provides a fundamental understanding of materials probed by four-dimensional scanning ultrafast electron microscopy, and offers possibilities for use of this imaging technique in the study of ultrafast charge carrier dynamics in heterogeneously patterned micro- and nanostructured material surfaces and interfaces.

  15. Occurrence and Ecotoxicological Effects of Free, Conjugated, and Halogenated Steroids Including 17α-Hydroxypregnanolone and Pregnanediol in Swiss Wastewater and Surface Water.

    Science.gov (United States)

    Zhang, Kun; Zhao, Yanbin; Fent, Karl

    2017-06-06

    Apart from estrogens, the occurrence and ecotoxicity of steroids in aquatic environments is poorly known. Here, we analyzed 33 steroids, including estrogens, androgens, progestins, and glucocorticoids, in hospital wastewaters, river water, and municipal wastewater treatment plant (WTP) influents and effluents at different sites in Switzerland. In addition, wastewater from different treatment steps of two WTPs with advanced treatment, such as ozonation or pulverized activated carbon, were analyzed to study the steroid's behavior during treatment. Considerable levels of different steroids occurred in hospital and raw municipal wastewater, but they were low (lower than 1 ng/L) or below the detection level in effluents of WTPs and river water. In WTP influents, estrogens (estrone, 17β-estradiol, and estriol), androgens (androstenedione, androsterone, trans-androsterone, and testosterone), progestins and metabolites (progesterone, medroxyprogesterone acetate, megestrol acetate, mifepristone, pregnanediol, 17α-hydroxypregnanolone, 17α-hydroxyprogesterone, and 21α-hydroxyprogesterone) were detected and removed effectively during biological treatment. Ozonation further removed the steroids. Exposure of zebrafish embryos demonstrated negligible effects of pregnanediol and 17α-hydroxypregnanolone, while mixtures that mimic wastewater and river water composition affected embryo development and led to the alteration of steroidogenesis gene transcripts at nanogram per liter concentrations. Although steroid concentrations are low in Swiss rivers, the possibility of additive effects may be of concern.

  16. Skin physiology in men and women: in vivo evaluation of 300 people including TEWL, SC hydration, sebum content and skin surface pH.

    Science.gov (United States)

    Luebberding, S; Krueger, N; Kerscher, M

    2013-10-01

    Evidence is given that differences in skin physiological properties exist between men and women. However, despite an assessable number of available publications, the results are still inconsistent. Therefore, the aim of this clinical study is the first systematic assessment of gender-related differences in skin physiology in men and women, with a special focus on changes over lifetime. A total of 300 healthy male and female subjects (20-74 years) were selected following strict criteria including age, sun behaviour or smoking habits. TEWL, hydration level, sebum production and pH value were measured with worldwide-acknowledged biophysical measuring methods at forehead, cheek, neck, volar forearm and dorsum of hand. Until the age of 50 men's TEWL is significantly lower than the water loss of women of the same age, regardless of the location. With ageing gender-related differences in TEWL assimilate. Young men show higher SC hydration in comparison with women. But, whereas SC hydration is stable or even increasing in women over lifetime, the skin hydration in men is progressively decreasing, beginning at the age of 40. Sebum production in male skin is always higher and stays stable with increasing age, whereas sebum production in women progressively decreases over lifetime. Across all localizations and age groups, the pH value in men is below 5, the pH value of female subjects is, aside from limited expectations, higher than 5. Skin physiological distinctions between the sexes exist and are particularly remarkable with regard to sebum production and pH value. © 2013 Society of Cosmetic Scientists and the Société Française de Cosmétologie.

  17. β-detected NMR Study of Semi-Insulating GaAs

    Science.gov (United States)

    Song, Q.; Chow, K. H.; Hossain, M. D.; Kiefl, R. F.; Morris, G. D.; Levy, C. D. P.; Saadaoui, H.; Smadella, M.; Wang, D.; Kardasz, B.; Heinrich, B.; MacFarlane, W. A.

    A beta-detected NMR experiment is carried out on a semi-insulating GaAs crystal using a low energy spin polarized 8Li+ beam to investigate the magnetic properties as a function of temperature and depth. The range of depths probed, from ˜137 nm down to ˜17 nm, coincides with the region of electronic band-bending due to the surface. We find a resonance broadened by the host nuclear dipoles, consistent with an earlier report[6], but using a pulsed radio frequency scheme, we are able to make higher resolution measurements. We find a small negative shift of the resonance (relative to an MgO reference) at room temperature that is independent of depth. Remarkably, as the temperature is reduced below about 150 K, the resonance shifts negatively and becomes depth dependent, with a larger negative shift deeper into the sample. This shift saturates below 10 K, i.e. it does not follow a Curie's law that might be expected for dilute magnetic impurities. Possible origins are discussed.

  18. Improved performance of GaAs photocathodes using effective activation technique

    Science.gov (United States)

    Zhang, Yijun; Zhang, Jingzhi; Feng, Cheng; Cheng, Hongchang; Zhang, Xiang; Qian, Yunsheng

    2017-09-01

    To achieve negative-electron-affinity state, the atomically clean surface of GaAs-based photocathode is usually activated by cesium and oxygen in the ultrahigh vacuum environment. In view of the required computer-control of evaporation flow rates, the solid oxygen dispenser instead of gaseous oxygen is urgently needed just as the regular cesium dispenser. Accordingly, the solid cesium and oxygen dispensers were applied to activate epitaxial GaAs cathode samples. Two types of solid oxygen dispensers composed of barium peroxide powder and silver oxide powder respectively are employed to improve cathode photoemission performance. The experimental results show that the barium peroxidebased oxygen dispenser can release more oxygen and bring in higher activation photocurrent and spectral response than the silver oxide-based one. The unsatisfactory feature is that the silver oxide-based oxygen dispenser released effectual oxygen gas more slowly than the barium peroxide-based oxygen dispenser. Therefore, an effective activation technique was proposed to ameliorate this unfavorable phenomenon for the silver oxide-based dispenser, which can bring out the desired symmetry of photocurrent curve shape during the Cs/O alternate activation process. The improved activation technique would provide guidance for the optimization of activation craft.

  19. Development of a lightweight, light-trapped, thin GaAs solar cell for spacecraft applications

    Science.gov (United States)

    Hannon, Margaret H.; Dinetta, Louis C.; Dashiell, Michael W.; Cummings, John R.; Barnett, Allen M.

    1994-01-01

    This paper describes ultra-lightweight, high performance, thin, light trapping GaAs solar cells for advanced space power systems. The device designs can achieve 24.5 percent efficiency at AMO and 1X conditions, corresponding to a power density of 330 W/m2. A significant breakthrough lies in the potential for a specific power of 2906 W/kg because the entire device is less than 1.5 microns thick. This represents a 440 percent improvement over conventional 4-mil silicon solar cells. In addition to being lightweight, this thin device design can result in increased radiation tolerance. The attachment of the cover glass support to the front surface has been demonstrated by both silicone and electrostatic bonding techniques. Device parameters of 1.002 volts open-circuit voltage, 80 percent fill factor, and a short-circuit current of 24.3 mA/sq cm have been obtained. This demonstrates a conversion efficiency of 14.4 percent resulting in a specific power of 2240 W/kg. Additionally, this new technology offers an alternative approach for enabling multi-bandgap solar cells and high output space solar power devices. The thin device structure can be applied to any 3-5 based solar cell application, yielding both an increase in specific power and radiation tolerance.

  20. Effect of semiconductor GaAs laser irradiation on pain perception in mice

    Energy Technology Data Exchange (ETDEWEB)

    Zarkovic, N.; Manev, H.; Pericic, D.; Skala, K.; Jurin, M.; Persin, A.; Kubovic, M.

    1989-01-01

    The influence of subacute exposure (11 exposures within 16 days) of mice to the low power (GaAs) semiconductive laser-stimulated irradiation on pain perception was investigated. The pain perception was determined by the latency of foot-licking or jumping from the surface of a 53 degrees C hot plate. Repeated hot-plate testing resulted in shortening of latencies in both sham- and laser-irradiated mice. Laser treatment (wavelength, 905 nm; frequency, 256 Hz; irradiation time, 50 sec; pulse duration, 100 nsec; distance, 3 cm; peak irradiance, 50 W/cm2 in irradiated area; and total exposure, 0.41 mJ/cm2) induced further shortening of latencies, suggesting its stimulatory influence on pain perception. Administration of morphine (20 mg/kg) prolonged the latency of response to the hot plate in both sham- and laser-irradiated mice. This prolongation tended to be lesser in laser-irradiated animals. Further investigations are required to elucidate the mechanism of the observed effect of laser.

  1. Investigation of the radiation damage of GaAs detectors by neutrons and photons

    Science.gov (United States)

    Braunschweig, W.; Kubicki, Th.; Lübelsmeyer, K.; Pandoulas, D.; Syben, O.; Tenbusch, F.; Toporowsky, M.; Wilms, Th.; Wittmer, B.; Xiao, W. J.

    1996-02-01

    Surface barrier particle detectors, processed in Aachen using SI GaAs from several manufacturers, have been irradiated with neutrons (peak energy ˜1 MeV) up to fluences of 4.0 × 10 14 n/cm 2 and with photons from a 60Co source with a dose of 100 Mrad. All detectors work well after the irradiation. Detectors biased with 200 V during the neutron irradiation show no significant difference from those not biased. After irradiation with 4.0 × 10 14 n/cm 2 the leakage currents at 200 V are a factor of 4 greater than those before irradiation. At the highest radiation level the signal for minimum ionizing particles corresponds to 7200 electrons (at 200 V bias voltage) independent of peaking times between 40 ns and 2.2 μs. The signals for α-particles (2.2 μs peaking time, 200 V bias voltage) are about 20% of those before irradiation. The exposure to the 100 Mrad photon dose caused little change of the detector performance. The leakage currents were even reduced by about 10%.

  2. Temperature dependence of stacking faults in catalyst-free GaAs nanopillars.

    Science.gov (United States)

    Shapiro, Joshua N; Lin, Andrew; Ratsch, Christian; Huffaker, D L

    2013-11-29

    Impressive opto-electronic devices and transistors have recently been fabricated from GaAs nanopillars grown by catalyst-free selective-area epitaxy, but this growth technique has always resulted in high densities of stacking faults. A stacking fault occurs when atoms on the growing (111) surface occupy the sites of a hexagonal-close-pack (hcp) lattice instead of the normal face-centered-cubic (fcc) lattice sites. When stacking faults occur consecutively, the crystal structure is locally wurtzite instead of zinc-blende, and the resulting band offsets are known to negatively impact device performance. Here we present experimental and theoretical evidence that indicate stacking fault formation is related to the size of the critical nucleus, which is temperature dependent. The difference in energy between the hcp and fcc orientation of small nuclei is computed using density-function theory. The minimum energy difference of 0.22 eV is calculated for a nucleus with 21 atoms, so the population of nuclei in the hcp orientation is expected to decrease as the nucleus grows larger. The experiment shows that stacking fault occurrence is dramatically reduced from 22% to 3% by raising the growth temperature from 730 to 790 ° C. These data are interpreted using classical nucleation theory which dictates a larger critical nucleus at higher growth temperature.

  3. Investigation of the radiation damage of GaAs detectors by protons, pions and neutrons

    Energy Technology Data Exchange (ETDEWEB)

    Luebelsmeyer, K. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Arbabi, S. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Braunschweig, W. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Chu, Z. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Krais, R. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Kubicki, T. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Rente, C. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Syben, O. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Tenbusch, F. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Toporowski, M. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Wittmer, B. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Xiao, W.J. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.

    1997-05-01

    Surface barrier detectors processed in Aachen using semi-insulating (SI) GaAs from several manufacturers have been irradiated with high fluences of neutrons (mean energy 1 MeV, fluence up to {Phi}{sub n} {proportional_to} 5 x 10{sup 14} cm{sup -2}), pions (191 MeV, fluence up to {Phi}{sub {pi}} {proportional_to} 0.6 x 10{sup 14} cm{sup -2}) and protons (23 GeV, fluence up to {Phi}{sub p} {proportional_to} 2 x 10{sup 14} cm{sup -2}). The detectors have been characterized in terms of macroscopic quantities like I-V characteristic curves and charge collection efficiencies for incident minimum ionizing- (mip) as well as {alpha}-particles. All detectors work well after the exposure. At the highest fluences a sizable degradation in the charge collection efficiencies has been observed for all investigated materials. SI-GaAs material with low carbon (LC) content seems to be less affected than substrates with a higher carbon concentration. At the highest irradiation level the mip signal from a 250 {mu}m thick detector made of LC material amounts to 8000 electrons (at 400 V bias voltage) independent of peaking times between 40 ns and 2.2 {mu}s. The leakage currents for this material are even reduced after the irradiation. (orig.).

  4. A novel Zn2 Cys6 transcription factor BcGaaR regulates D-galacturonic acid utilization in Botrytis cinerea.

    Science.gov (United States)

    Zhang, Lisha; Lubbers, Ronnie J M; Simon, Adeline; Stassen, Joost H M; Vargas Ribera, Pablo R; Viaud, Muriel; van Kan, Jan A L

    2016-04-01

    D-galacturonic acid (GalA) is the most abundant monosaccharide component of pectin. Previous transcriptome analysis in the plant pathogenic fungus Botrytis cinerea identified eight GalA-inducible genes involved in pectin decomposition, GalA transport and utilization. Co-expression of these genes indicates that a specific regulatory mechanism occurs in B. cinerea. In this study, promoter regions of these genes were analysed and eight conserved sequence motifs identified. The Bclga1 promoter, containing all these motifs, was functionally analysed and the motif designated GalA Responsive Element (GARE) was identified as the crucial cis-regulatory element in regulation of GalA utilization in B. cinerea. Yeast one-hybrid screening with the GARE motif led to identification of a novel Zn2 Cys6 transcription factor (TF), designated BcGaaR. Targeted knockout analysis revealed that BcGaaR is required for induction of GalA-inducible genes and growth of B. cinerea on GalA. A BcGaaR-GFP fusion protein was predominantly localized in nuclei in mycelium grown in GalA. Fluorescence in nuclei was much stronger in mycelium grown in GalA, as compared to fructose and glucose. This study provides the first report of a GalA-specific TF in filamentous fungi. Orthologs of BcGaaR are present in other ascomycete fungi that are able to utilize GalA, including Aspergillus spp., Trichoderma reesei and Neurospora crassa. © 2015 John Wiley & Sons Ltd.

  5. Nonlinear optical rectification and second and third harmonic generation in GaAs {delta}-FET systems under hydrostatic pressure

    Energy Technology Data Exchange (ETDEWEB)

    Martinez-Orozco, J.C. [Unidad Academica de Fisica, Universidad Autonoma de Zacatecas, 98060 Zacatecas, ZAC (Mexico); Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Ave. Universidad 1001, CP 62209 Cuernavaca, Morelos (Mexico); Duque, C.A., E-mail: cduque_echeverri@yahoo.es [Instituto de Fisica, Universidad de Antioquia, AA 1226, Medellin (Colombia)

    2012-02-15

    The GaAs n-type delta-doped field effect transistor is proposed as a source for nonlinear optical responses such as second order rectification and second and third harmonic generation. Particular attention is paid to the effect of hydrostatic pressure on these properties, related with the pressure-induced modifications of the energy level spectrum. The description of the one-dimensional potential profile is made including Hartree and exchange and correlation effects via a Thomas-Fermi-based local density approximation. The allowed energy levels are calculated within the effective mass and envelope function approximations by means of an expansion over an orthogonal set of infinite well eigenfunctions. The results for the coefficients of nonlinear optical rectification and second and third harmonic generation are reported for several values of the hydrostatic pressure. - Highlights: Black-Right-Pointing-Pointer GaAs n-type delta-doped field effect transistor. Black-Right-Pointing-Pointer NOR and SHG are enhanced as a result of the pressure. Black-Right-Pointing-Pointer THG is quenched as a result of the pressure. Black-Right-Pointing-Pointer The zero pressure situation is the best scenario for the THG.

  6. Observation of Dirac bands in artificial graphene in small-period nanopatterned GaAs quantum wells

    Science.gov (United States)

    Wang, Sheng; Scarabelli, Diego; Du, Lingjie; Kuznetsova, Yuliya Y.; Pfeiffer, Loren N.; West, Ken W.; Gardner, Geoff C.; Manfra, Michael J.; Pellegrini, Vittorio; Wind, Shalom J.; Pinczuk, Aron

    2018-01-01

    Charge carriers in graphene behave like massless Dirac fermions (MDFs) with linear energy-momentum dispersion1, 2, providing a condensed-matter platform for studying quasiparticles with relativistic-like features. Artificial graphene (AG)—a structure with an artificial honeycomb lattice—exhibits novel phenomena due to the tunable interplay between topology and quasiparticle interactions3-6. So far, the emergence of a Dirac band structure supporting MDFs has been observed in AG using molecular5, atomic6, 7 and photonic systems8-10, including those with semiconductor microcavities11. Here, we report the realization of an AG that has a band structure with vanishing density of states consistent with the presence of MDFs. This observation is enabled by a very small lattice constant (a = 50 nm) of the nanofabricated AG patterns superimposed on a two-dimensional electron gas hosted by a high-quality GaAs quantum well. Resonant inelastic light-scattering spectra reveal low-lying transitions that are not present in the unpatterned GaAs quantum well. These excitations reveal the energy dependence of the joint density of states for AG band transitions. Fermi level tuning through the Dirac point results in a collapse of the density of states at low transition energy, suggesting the emergence of the MDF linear dispersion in the AG.

  7. Remote PECVD silicon nitride films with improved electrical properties for GaAs P-HEMT passivation

    CERN Document Server

    Sohn, M K; Kim, K H; Yang, S G; Seo, K S

    1998-01-01

    In order to obtain thin silicon nitride films with excellent electrical and mechanical properties, we employed RPECVD (Remote Plasma Enhanced Chemical Vapor Deposition) process which produces less plasma-induced damage than the conventional PECVD. Through the optical and electrical measurements of the deposited films, we optimized the various RPECVD process parameters. The optimized silicon nitride films showed excellent characteristics such as small etch rate (approx 33 A/min by 7:1 BHF), high breakdown field (>9 MV/cm), and low compressive stress (approx 3.3x10 sup 9 dyne/cm sup 2). We successfully applied thin RPECVD silicon nitride films to the surface passivation of GaAs pseudomorphic high electron mobility transistors (P-HEMTs) with negligible degradations in DC and RF characteristics.

  8. Electronic structure of (In,Mn)As quantum dots buried in GaAs investigated by soft-x-ray ARPES.

    Science.gov (United States)

    Bouravleuv, A D; Lev, L L; Piamonteze, C; Wang, X; Schmitt, T; Khrebtov, A I; Samsonenko, Yu B; Kanski, J; Cirlin, G E; Strocov, V N

    2016-10-21

    Electronic structure of a molecular beam epitaxy-grown system of (In,Mn)As quantum dots (QDs) buried in GaAs is explored with soft-x-ray angle-resolved photoelectron spectroscopy (ARPES) using photon energies around 1 keV. This technique, ideally suited for buried systems, extends the momentum-resolving capabilities of conventional ARPES with enhanced probing depth as well as elemental and chemical state specificity achieved with resonant photoexcitation. The experimental results resolve the dispersive energy bands of the GaAs substrate buried in ∼2 nm below the surface, and the impurity states (ISs) derived from the substitutional Mn atoms in the (In,Mn)As QDs and oxidized Mn atoms distributed near the surface. An energy shift of the Mn ISs in the QDs compared to (In,Mn)As DMS is attributed to the band offset and proximity effect at the interface with the surrounding GaAs. The absence of any ISs in the vicinity of the VBM relates the electron transport in (In,Mn)As QDs to the prototype (In,Mn)As diluted magnetic semiconductor. The SX-ARPES results are supported by measurements of the shallow core levels under variation of probing depth through photon energy. X-ray absorption measurements identify significant diffusion of interstitial Mn atoms out of the QDs towards the surface, and the role of magnetic circular dichroism is to block the ferromagnetic response of the (In,Mn)As QDs. Possible routes are drawn to tune the growth procedure aiming at practical applications of the (In,Mn)As based systems.

  9. Defect analyses of selective epitaxial grown GaAs on STI patterned (0 0 1) Si substrates

    Science.gov (United States)

    Kim, S. W.; Cho, Y. D.; Shin, C. S.; Park, W. K.; Kim, D. H.; Ko, D. H.

    2014-09-01

    The defects of GaAs layers grown on Si (001) substrate with patterned SiO2 structures were investigated using transmission electron microscopy. The compressive strain along the direction was induced in selectively grown GaAs epilayers.The defects such as stacking faults or microtwins were trapped near the GaAs/Si interface, over which defect free GaAs regions were formed from the middle of trench walls. It is suggested that the residual compressive strain in defect free GaAs layers is due to the patterned SiO2 structures.

  10. ITER TASK T252 (1995):Gamma radiation testing of a GaAs operational amplifier for instrument applications

    International Nuclear Information System (INIS)

    Hiemstra, D.

    1996-03-01

    The purpose of this 1995 ITER task was : to build an improved operational amplifier using GaAs MESFET technology, to build a reference voltage subcircuit using GaAs MESFET technology and to investigate the potential of GaAs HBT's to improve the noise performance of the GaAs MESFET operational amplifier. This work addresses the need for instrumentation-grade components to read sensors in an experimental fusion reactor, where the anticipated total dose for a useful service life is 3Grad(GaAs). It is an extension of our 1994 work. 3 tabs., 6 figs

  11. Comparison of different grading schemes in InGaAs metamorphic buffers on GaAs substrate: Tilt dependence on cross-hatch irregularities

    International Nuclear Information System (INIS)

    Kumar, Rahul; Bag, Ankush; Mukhopadhyay, Partha; Das, Subhashis; Biswas, Dhrubes

    2015-01-01

    Highlights: • InGaAs graded MBs with different grading scheme has been grown by MBE on GaAs. • Continuously graded MB exhibits smoother surface morphology. • Grading scheme has been found to have little impact on lattice relaxation. • Grading schemeaffects the lattice tilt significantly. • Cross-hatch surface irregularities affect the crystallographic tilt. - Abstract: InGaAs graded metamorphic buffers (MBs) with different grading strategies have been grown by molecular beam epitaxy (MBE) on GaAs (0 0 1) substrate. A detailed comparative analysis of surface using atomic force microscopy (AFM), and bulk properties using high resolution X-ray diffraction (HRXRD) and room temperature photoluminescence (RTPL) of grown MBs have been presented to comprehend the effectiveness of different grading scheme on InGaAs MBs. Conventional, statistical and fractal analysis on measured AFM data has been performed for in-depth investigation of these surfaces. The grading scheme has been found to have little impact on residual strain while it affects the epitaxial tilt significantly. Moreover, the tilt has been found to depend on growth front irregularities. Tilt magnitude in a graded MB has been found to vary with composition while tilt azimuth has been found to be almost same in the graded layers. PL Intensity and a shift in the PL peaks have been used to study the quality of the MB and residual strain comparatively.

  12. Comparison of different grading schemes in InGaAs metamorphic buffers on GaAs substrate: Tilt dependence on cross-hatch irregularities

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Rahul, E-mail: rkp203@gmail.com [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Bag, Ankush [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Mukhopadhyay, Partha [Rajendra Mishra School of Engineering Entrepreneurship, Indian Institute of Technology, Kharagpur 721302 (India); Das, Subhashis [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Biswas, Dhrubes [Department of Electronics & Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721 302 (India)

    2015-12-01

    Highlights: • InGaAs graded MBs with different grading scheme has been grown by MBE on GaAs. • Continuously graded MB exhibits smoother surface morphology. • Grading scheme has been found to have little impact on lattice relaxation. • Grading schemeaffects the lattice tilt significantly. • Cross-hatch surface irregularities affect the crystallographic tilt. - Abstract: InGaAs graded metamorphic buffers (MBs) with different grading strategies have been grown by molecular beam epitaxy (MBE) on GaAs (0 0 1) substrate. A detailed comparative analysis of surface using atomic force microscopy (AFM), and bulk properties using high resolution X-ray diffraction (HRXRD) and room temperature photoluminescence (RTPL) of grown MBs have been presented to comprehend the effectiveness of different grading scheme on InGaAs MBs. Conventional, statistical and fractal analysis on measured AFM data has been performed for in-depth investigation of these surfaces. The grading scheme has been found to have little impact on residual strain while it affects the epitaxial tilt significantly. Moreover, the tilt has been found to depend on growth front irregularities. Tilt magnitude in a graded MB has been found to vary with composition while tilt azimuth has been found to be almost same in the graded layers. PL Intensity and a shift in the PL peaks have been used to study the quality of the MB and residual strain comparatively.

  13. Defect studies in low-temperature-grown GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Bliss, David Emory [Univ. of California, Berkeley, CA (United States)

    1992-11-01

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies VGa. The neutral AsGa-related defects were measured by infrared absorption at 1μm. Gallium vacancies, VGa, was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 1019 cm-3 Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more AsGa in the layer. As AsGa increases, photoquenchable AsGa decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral AsGa content around 500C, similar to irradiation damaged and plastically deformed GaAs, as opposed to bulk grown GaAs in which AsGa-related defects are stable up to 1100C. The lower temperature defect removal is due to VGa enhanced diffusion of AsGa to As precipitates. The supersaturated VGa and also decreases during annealing. Annealing kinetics for AsGa-related defects gives 2.0 ± 0.3 eV and 1.5 ± 0.3 eV migration enthalpies for the AsGa and VGa. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable AsGa-related defects anneal with an activation energy of 1.1 ± 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of AsGa-BeGa pairs. Si donors can only be partially activated.

  14. Defect studies in low-temperature-grown GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Bliss, D.E.

    1992-11-01

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

  15. Gaa'ilaa Fi Gaa'ilaan Ala Akka Dhirsaa Fi Niitiitti Waliin Jiraachuu ...

    African Journals Online (AJOL)

    Intentionally by avoiding proof of marriage by possession of status, and including proof of marriage by celebration of marriage, therefore, the Oromia Family Law avoided such confusions. These dissimilarities brought about diversity of jurisdiction between the federal and regional judicial powers via power of cassation over ...

  16. Yield Surface for Bars Including Warping Restraint.

    Science.gov (United States)

    1982-02-01

    Kreyenhagen Stragetic Air Command Columbia University ATTN: NRI-STINFO Library ATTN: H. Bleich ATTN: F. Dimaggio DEPARTMENT OF ENERGY University of Denver...TIC-Library SRI International ATTN: G. Abrahamson M & T Company ATTN: W. Wilkinson ATTN: D. McNaight ATTN: A. Florence Management Science Associates

  17. Reflection high-energy electron diffraction oscillations during molecular beam epitaxial growth of ZnSe on (001)GaAs

    International Nuclear Information System (INIS)

    Yao, Takafumi; Taneda, Hirohito; Funaki, Mitsuyoshi

    1986-01-01

    Reflection high-energy electron diffraction (RHEED) intensity oscillations during molecular beam epitaxy (MBE) of II - VI compound of ZnSe are observed for the first time. The MBE growth was achieved on (001) GaAs substrate. After an 1-μm thick ZnSe buffer was grown, stable oscillations were observed at around the molecular beam flux ratio of Zn to Se of 1:3. One period of the oscillation corresponds to the growth rate of monomolecular layer. The observation of the oscillatory behaviors of RHEED is discussed in terms of surface morphology as is observed by RHEED. (author)

  18. Electric-field effect on magnetic anisotropy in Pt/Co/Pd/MgO structures deposited on GaAs and Si substrates

    Science.gov (United States)

    Hayashi, Yohei; Hibino, Yuki; Matsukura, Fumihiro; Miwa, Kazumoto; Ono, Shimpei; Hirai, Takamasa; Koyama, Tomohiro; Ohno, Hideo; Chiba, Daichi

    2018-01-01

    We investigate the electric-field effect on the magnetic anisotropy in perpendicularly magnetized Pt/Co/Pd/MgO structures deposited on GaAs and Si substrates as a function of temperature. An electric field is applied to the Pd surface through a 2-nm-thick insulating MgO layer by forming an electric double layer using an ionic liquid. We find that the electric-field dependence of the anisotropy is similar but clearly different between the two samples at low temperatures. The difference is expected to be related to the difference in the internal strain of the two structures.

  19. Two-dimensional superconducting state of monolayer Pb films grown on GaAs(110) in a strong parallel magnetic field.

    Science.gov (United States)

    Sekihara, Takayuki; Masutomi, Ryuichi; Okamoto, Tohru

    2013-08-02

    Two-dimensional (2D) superconductivity was studied by magnetotransport measurements on single-atomic-layer Pb films on a cleaved GaAs(110) surface. The superconducting transition temperature shows only a weak dependence on the parallel magnetic field up to 14T, which is higher than the Pauli paramagnetic limit. Furthermore, the perpendicular-magnetic-field dependence of the sheet resistance is almost independent of the presence of the parallel field component. These results are explained in terms of an inhomogeneous superconducting state predicted for 2D metals with a large Rashba spin splitting.

  20. Contact degradation of GaAs transferred electron devices

    International Nuclear Information System (INIS)

    Palmstroem, C.J.; Morgan, D.V.; Howes, M.J.

    1978-01-01

    The migration of contact material into the GaAs devices may degrade the device performance (noise, power output) and can shorten the mean time to failure of operational devices. In order to understand contact degradation the interdiffusion of gold/germanium contacts on gallium arsenide has been studied using Rutherford backscattering, ion microprobe (SIMS) and microbeam techniques. Both the depth profiling and imaging properties of the ion microprobe have been used. The microbeam was used for focused Rutherford backscattering giving a lateral resolution approximately 10 μm. When used in conjunction with angle lapped samples it allows analysis to be conducted to greater depths and hence one may use thicker contact films. The use of these techniques has enabled both the lateral and depth distributions of gold, germanium, gallium and arsenic to be obtained. These distributions have revealed gold and germanium spike formation beneath the contact. The information obtained provides insight into the mechanisms involved in the formation of ohmic contacts to gallium arsenide. The degradation of such contacts as a result of thermal and electrical effects is discussed. (Auth.)

  1. Semiconductor GaAs: electronic paramagnetic resonance new data

    International Nuclear Information System (INIS)

    Benchiguer, T.

    1994-04-01

    The topic of this study was to put to the fore, thanks to our electron spin resonance experiments, one charge transfer process, which was optically induced between the deep donor As + G a and the different acceptors, which were present in the material. We described these processes through a theoretical model, which we named charge transfer model. With this latter, we were able to trace a graph network, representing the As + G a concentration kinetics. Then we verified the compatibility of our model with one transport experiment. One experimental verification of our model were delivered, thanks to neutronic transmutation doping. The following stage was the study of defects, induced by thermal strains, to which the crystal was submitted during the cooling phase. At last we wanted to get round the non solved super hyperfine structure problem for GaAs by studying another III-V material for which she was resolved, namely gallium phosphide. (MML). 150 refs., 72 figs., 16 tabs., 3 annexes

  2. GaAs quantum dot solar cell under concentrated radiation

    International Nuclear Information System (INIS)

    Sablon, K.; Little, J. W.; Hier, H.; Li, Y.; Mitin, V.; Vagidov, N.; Sergeev, A.

    2015-01-01

    Effects of concentrated solar radiation on photovoltaic performance are investigated in well-developed GaAs quantum dot (QD) solar cells with 1-Sun efficiencies of 18%–19%. In these devices, the conversion processes are enhanced by nanoscale potential barriers and/or AlGaAs atomically thin barriers around QDs, which prevent photoelectron capture to QDs. Under concentrated radiation, the short circuit current increases proportionally to the concentration and the open circuit voltage shows the logarithmic increase. In the range up to hundred Suns, the contributions of QDs to the photocurrent are proportional to the light concentration. The ideality factors of 1.1–1.3 found from the V OC -Sun characteristics demonstrate effective suppression of recombination processes in barrier-separated QDs. The conversion efficiency shows the wide maximum in the range of 40–90 Suns and reaches 21.6%. Detailed analysis of I-V-Sun characteristics shows that at low intensities, the series resistance decreases inversely proportional to the concentration and, at ∼40 Suns, reaches the plateau determined mainly by the front contact resistance. Improvement of contact resistance would increase efficiency to above 24% at thousand Suns

  3. Point defects in GaAs and other semiconductors

    International Nuclear Information System (INIS)

    Ehrhart, P.; Karsten, K.; Pillukat, A.

    1993-01-01

    In order to understand the properties of intrinsic point defects and their interactions at high defect concentrations GaAs wafers were irradiated at 4.5 K with 3 MeV electrons up to a dose of 4 · 10 19 e - /cm 2 . The irradiated samples were investigated by X-ray Diffraction and optical absorption spectroscopy. The defect production increases linearly with irradiation dose and characteristic differences are observed for the two sublattices. The Ga-Frenkel pairs are strongly correlated and are characterized by much larger lattice relaxations (V rel = 2--3 atomic volumes) as compared to the As-Frenkel pairs (V rel ∼1 at. vol.). The dominating annealing stage around 300 K is attributed to the mobility of the Ga interstitial atoms whereas the As-interstitial atoms can recombine with their vacancies only around 500 K. These results are compared to those for InP, ZnSe and Ge. Implications for the understanding of the damage after ion irradiation and implantation are discussed

  4. A photoemission study of Mn grown on GaAs(100)

    International Nuclear Information System (INIS)

    James, D.; Riley, J.; Leckey, R.; Usher, B.; Sieber, N.; Seyller, Th.; Ley, L.

    2002-01-01

    Full text: Metal contacts on semiconductors have been an important area for device manufacture. The possibility of lattice matched growth of magnetic metals on semiconductors was once thought to be a unobtainable goal. More recently it has been found that transition metals can react with the semiconductor substrates, forming another lattice with a more comparable lattice constant, from which epitaxial growth can then proceed. Al grows epitaxially on GaN even with a lattice mismatch greater than 10%. In this instance, Al displaces Ga being driven by a larger heat of formation to produce an AlN buffer layer, on which Al can then grow. This paper investigates the room temperature deposition of Mn onto GaAs(100) at room temperature. The Photoemission study was carried out at the UEL56/2 PGM2 beam line at BESSY II in Berlin, Germany. Synchrotron radiation was used to observe the surface as thin layers of Mn were deposited. The interaction of manganese with the substrate tends to donate electron density to neighbouring atoms, decreasing binding energy. No further segregation of substitutional or interstitial Mn and Ga can be seen from angle dependence data at this temperature, with metallic manganese eventually attenuating the bulk Ga signal to the point where it is indistinguishable from the background. It is concluded that there the metal reacts with the semiconductor surface with some indiffusion as confirmed using SIMS. Previously, the reaction was only thought to have taken place above room temperature. The resulting structure consists of a Ga-As-Mn buffer layer as with the higher temperature depositions

  5. Highly efficient single-junction GaAs thin-film solar cell on flexible substrate

    Science.gov (United States)

    Moon, Sunghyun; Kim, Kangho; Kim, Youngjo; Heo, Junseok; Lee, Jaejin

    2016-07-01

    There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-off (ELO) method that uses a stress originating from a Cr/Au bilayer on a 125-μm-thick flexible substrate. A metal combination of AuBe/Pt/Au is employed as a new p-type ohmic contact with which an n-on-p single-junction GaAs thin-film solar cell on flexible substrate was successfully fabricated. The PCE of the fabricated single-junction GaAs thin-film solar cells reached 22.08% under air mass 1.5 global illumination.

  6. n-Type Doping of Vapor–Liquid–Solid Grown GaAs Nanowires

    Directory of Open Access Journals (Sweden)

    Gutsche Christoph

    2011-01-01

    Full Text Available Abstract In this letter, n-type doping of GaAs nanowires grown by metal–organic vapor phase epitaxy in the vapor–liquid–solid growth mode on (111B GaAs substrates is reported. A low growth temperature of 400°C is adjusted in order to exclude shell growth. The impact of doping precursors on the morphology of GaAs nanowires was investigated. Tetraethyl tin as doping precursor enables heavily n-type doped GaAs nanowires in a relatively small process window while no doping effect could be found for ditertiarybutylsilane. Electrical measurements carried out on single nanowires reveal an axially non-uniform doping profile. Within a number of wires from the same run, the donor concentrations ND of GaAs nanowires are found to vary from 7 × 1017 cm-3 to 2 × 1018 cm-3. The n-type conductivity is proven by the transfer characteristics of fabricated nanowire metal–insulator-semiconductor field-effect transistor devices.

  7. Beam test measurements on GaAs strip and pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Albertz, D.; Braunschweig, W.; Breibach, J.; Graessel, D.; Kubicki, T.; Luebelsmeyer, K.; Rente, C.; Roeper, C.; Siedling, R.; Syben, O.; Tenbusch, F.; Toporowski, M.; Xiao, W.J. [Technische Hochschule Aachen (Germany). I. Physikalisches Institut

    1998-06-01

    GaAs strip and pixel detectors constructed in Aachen have been tested in a 1.4 GeV electron beam in Bonn and in a 5 GeV electron beam at DESY in February and May 1997. The strip detectors had a pitch of 50 {mu}m with a strip width of 25 {mu}m and were made of a 250 {mu}m thick Freiberger SI-GaAs wafer. The strip detectors included a punch-through bias structure and an integrated coupling capacitor. Additionally, an improved backside contact was formed, allowing a safe operation of the detector in a soft breakdown regime. Using the fast PreMux128 preamplifier multiplexer chip ({tau}{sub p}=50 ns) a signal-to-noise ratio of 13 was obtained at normal beam incidence for a bias voltage of 200 V, leading to a spatial resolution of 11 {mu}m with a simple COG algorithm. The 8 x 16 pixel array with a pixel size of 125 x 125 {mu}m{sup 2} was read out with the PreMux128 as well. With a double-metal technique, it was possible to bond the single-pixels linearly to the amplifier chip. The obtained signal-to-noise ratio of 30 in combination with a COG algorithm lead to the digital resolution value of 36 {mu}m for both pixel coordinates. (orig.) 10 refs.

  8. GaAs Industry in Europe-Technologies, Trends and New Developments

    Science.gov (United States)

    Jung, Helmut; Blanck, Hervé; Bösch, Wolfgang; Mayock, Jim

    The GaAs industry has been growing immensely during recent years. This is mainly driven by the tremendous growth of the wireless communication market, which is still continuously growing. Additionally, an emerging mmW market with applications in automotive, defense and optoelectronics is further driving the demand for GaAs components. The two largest European GaAs fabrication companies, UMS and Filtronic are very well positioned to address the complete frequency range from 1GHz up to 100GHz for commercial, high volume low cost markets, as well as individual niche applications. An overview of the companies' structures, their processes and design capabilities and also their new product developments will be presented in this paper.

  9. Electronic structure of GaAs with InAs (001) monolayer

    International Nuclear Information System (INIS)

    Tit, N.; Peressi, M.

    1995-04-01

    The effect on the electronic structure of an InAs monomolecular plane inserted in bulk GaAs is investigated theoretically. The (InAs) 1 (GaAs) n (001) strained superlattice is studied via ab-initio self-consistent pseudopotential calculations. Both electrons and holes are localized nearby the inserted InAs monolayer, which therefore acts as a quantum well for all the charge carriers. The small thickness of the inserted InAs slab is responsible of high confinement energies for the charge carriers, and therefore the interband electron-heavy-hole transition energy is close to the energy gap of the bulk GaAs, in agreement with recent experimental data. (author). 18 refs, 4 figs

  10. Neutron-damaged GaAs detectors for use in a Compton spectrometer

    International Nuclear Information System (INIS)

    Kammeraad, J.E.; Sale, K.E.; Wang, C.L.; Baltrusaitis, R.M.

    1992-01-01

    Detectors made of GaAs are being studies for use on the focal plane of a Compton spectrometer which measures 1-MeV to 25-MeV gamma rays with high energy resolution (1% or 100 keV, whichever is greater) and 200-ps time resolution. The detectors are GaAs chips that have been neutron-damaged to improve the time response. The detectors will be used to measure fast transient signals in the current mode. The properties of various GaAs detector configurations are being studied by bombarding sample detectors with short pulses of 4-MeV to 16-MeV electrons at the Linac Facility at EG ampersand G Energy Measurements, Inc., Santa Barbara Operations. Measurements of detector sensitivity and impulse response versus detector bias, thickness, and electron beam energy and intensity have been performed and are presented. 5 refs

  11. Gallium loading of gold seed for high yield of patterned GaAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Boulanger, J. P.; Chia, A. C. E.; LaPierre, R. R., E-mail: lapierr@mcmaster.ca [Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)

    2014-08-25

    A method is presented for maximizing the yield and crystal phase purity of vertically aligned Au-assisted GaAs nanowires grown with an SiO{sub x} selective area epitaxy mask on GaAs (111)B substrates. The nanowires were grown by the vapor-liquid-solid (VLS) method in a gas source molecular beam epitaxy system. During annealing, Au VLS seeds will alloy with the underlying GaAs substrate and collect beneath the SiO{sub x} mask layer. This behavior is detrimental to obtaining vertically aligned, epitaxial nanowire growth. To circumvent this issue, Au droplets were pre-filled with Ga assuring vertical yields in excess of 99%.

  12. Self-assembled colloidal PbS quantum dots on GaAs substrates

    International Nuclear Information System (INIS)

    Lue, Wei; Yamada, Fumihiko; Kamiya, Itaru

    2010-01-01

    We report the fabrication and analysis of self-assembled monolayer and bilayer films of colloidal PbS quantum dots (QDs) on GaAs (001) substrates. 1,6-hexanedithiol is used as link molecule between QDs and GaAs substrates. Atomic force microscopy (AFM) and photoluminescence (PL) measurements confirm the formation of PbS QD film on GaAs. For the monolayer PbS QD film, the temperature-dependent PL shows a feature typical of close-packed film. For the bilayer PbS QD film fabricated from two different mean-sized PbS QDs, we find that the stacking sequence of QDs with different size affects the quantum yield and emission wavelength of the film.

  13. Use of zinc diffusion into GaAs for determining properties of gallium interstitials

    Science.gov (United States)

    Bösker, G.; Stolwijk, N. A.; Hettwer, H.-G.; Rucki, A.; Jäger, W.; Södervall, U.

    1995-10-01

    The fast diffusion of Zn into GaAs has recently been attributed to a minor fraction of Zn interstitials changing over to Ga sites thereby producing interstitial Ga (IGa). This kick-out reaction provides the possibility to determine IGa transport properties from Zn diffusion experiments in virtually perfect GaAs but previous attempts were frustrated by diffusion-induced generation of microstructural defects acting as IGa sinks. The present study prevents such defect formation by utilizing Zn-doped GaAs powder as the diffusion source. Measured two-stage profiles show that under these conditions Zn diffusion at 906 °C is controlled by I3+Ga in addition to I2+Ga. Analysis of the profiles yield quantitative data on Ga- and Zn-related diffusivities, concentrations of IGa as well as the corresponding electronic transition energy.

  14. GaAs quantum dots in a GaP nanowire photodetector

    Science.gov (United States)

    Kuyanov, P.; McNamee, S. A.; LaPierre, R. R.

    2018-03-01

    We report the structural, optical and electrical properties of GaAs quantum dots (QDs) embedded along GaP nanowires. The GaP nanowires contained p–i–n junctions with 15 consecutively grown GaAs QDs within the intrinsic region. The nanowires were grown by molecular beam epitaxy using the self-assisted vapor–liquid–solid process. The crystal structure of the NWs alternated between twinned ZB and WZ as the composition along the NW alternated between the GaP barriers and the GaAs QDs, respectively, leading to a polytypic structure with a periodic modulation of the NW sidewall facets. Photodetector devices containing QDs showed absorption beyond the bandgap of GaP in comparison to nanowires without QDs. Voltage-dependent measurements suggested a field emission process of carriers from the QDs.

  15. Si and gaas pixel detectors for medical imaging applications

    International Nuclear Information System (INIS)

    Bisogni, M. G.

    2001-01-01

    As the use of digital radiographic equipment in the morphological imaging field is becoming the more and more diffuse, the research of new and more performing devices from public institutions and industrial companies is in constant progress. Most of these devices are based on solid-state detectors as X-ray sensors. Semiconductor pixel detectors, originally developed in the high energy physics environment, have been then proposed as digital detector for medical imaging applications. In this paper a digital single photon counting device, based on silicon and GaAs pixel detector, is presented. The detector is a thin slab of semiconductor crystal where an array of 64 by 64 square pixels, 170- m side, has been built on one side. The data read-out is performed by a VLSI integrated circuit named Photon Counting Chip (PCC), developed within the MEDIPIX collaboration. Each chip cell geometrically matches the sensor pixel. It contains a charge preamplifier, a threshold comparator and a 15 bits pseudo-random counter and it is coupled to the detector by means of bump bonding. Most important advantages of such system, with respect to a traditional X-rays film/screen device, are the wider linear dynamic range (3x104) and the higher performance in terms of MTF and DQE. Besides the single photon counting architecture allows to detect image contrasts lower than 3%. Electronics read-out performance as well as imaging capabilities of the digital device will be presented. Images of mammographic phantoms acquired with a standard Mammographic tube will be compared with radiographs obtained with traditional film/screen systems

  16. Photogenerated carrier-induced reactions on uhv semiconductor surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Osgood, R.M. Jr.

    1992-05-28

    The objective for this experimental work was to examine the reaction mechanisms, half-collision dynamics, and other optically induced chemical effects, that are operable on a well characterized single-crystal semiconductor surface. Of particular interest were reactions induced by charge transfer from the semiconductor surface including hot carrier and thermalized carrier processes. The primary technique to measure the desorbed fragment translational energies was time-of-flight mass-spectroscopy, used in conjunction with a pulsed tunable laser source. The work was carried out in ultrahigh vacuum, thus other surface spectroscopies such as temperature-programmed desorption, (TPD), (LEED), etc. were used as needed. In the project, the photoreactions of several halogen-containing molecules on GaAs(110) surfaces have been investigated. The studies have made the first observations of several new photochemical processes on uhv prepared surfaces including intermolecular charge transfer; desorption by thermal-carrier-induced reactions (including the measurement of coverage-dependent changes in the translational energies of the desorbed products); interferometric oscillation of photoinduced reactions; and self-quenching of thermal carrier reactions on surfaces.

  17. Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities

    Science.gov (United States)

    Luengo-Kovac, M.; Huang, S.; Del Gaudio, D.; Occena, J.; Goldman, R. S.; Raimondi, R.; Sih, V.

    2017-11-01

    The current-induced spin polarization and momentum-dependent spin-orbit field were measured in InxGa1 -xAs epilayers with varying indium concentrations and silicon doping densities. Samples with higher indium concentrations and carrier concentrations and lower mobilities were found to have larger electrical spin generation efficiencies. Furthermore, current-induced spin polarization was detected in GaAs epilayers despite the absence of measurable spin-orbit fields, indicating that the extrinsic contributions to the spin-polarization mechanism must be considered. Theoretical calculations based on a model that includes extrinsic contributions to the spin dephasing and the spin Hall effect, in addition to the intrinsic Rashba and Dresselhaus spin-orbit coupling, are found to reproduce the experimental finding that the crystal direction with the smaller net spin-orbit field has larger electrical spin generation efficiency and are used to predict how sample parameters affect the magnitude of the current-induced spin polarization.

  18. Carrier-induced change in refractive index of InP, GaAs, and InGaAsP

    International Nuclear Information System (INIS)

    Bennett, B.R.; Soref, R.A.; Del Alamo, J.A.

    1990-01-01

    The authors have theoretically estimated the change in refractive index Δn produced by injection of free carriers in InP, GaAs, and InGaAsP. Bandfilling (Burstein-Moss effect), band-gap shrinkage, and free-carrier absorption (plasma effect) were included. Carrier concentrations of 10 16 /cm 3 to 10 19 /cm 3 and photon energies of 0.8 to 2.0 eV were considered. Predictions of Δn are in reasonably good agreement with the limited experimental data available. Refractive index changes as large as 10 - 2 are predicted for carrier concentrations of 10 18 /cm 3 , suggesting that low-loss optical phase modulators and switches using carrier injection are feasible in these materials

  19. Involvement of Agrobacterium tumefaciens Galacturonate Tripartite ATP-Independent Periplasmic (TRAP) Transporter GaaPQM in Virulence Gene Expression.

    Science.gov (United States)

    Zhao, Jinlei; Binns, Andrew N

    2016-02-15

    Monosaccharides capable of serving as nutrients for the soil bacterium Agrobacterium tumefaciens are also inducers of the vir regulon present in the tumor-inducing (Ti) plasmid of this plant pathogen. One such monosaccharide is galacturonate, the predominant monomer of pectin found in plant cell walls. This ligand is recognized by the periplasmic sugar binding protein ChvE, which interacts with the VirA histidine kinase that controls vir gene expression. Although ChvE is also a member of the ChvE-MmsAB ABC transporter involved in the utilization of many neutral sugars, it is not involved in galacturonate utilization. In this study, a putative tripartite ATP-independent periplasmic (TRAP) transporter, GaaPQM, is shown to be essential for the utilization of galacturonic acid; we show that residue R169 in the predicted sugar binding site of the GaaP is required for activity. The gene upstream of gaaPQM (gaaR) encodes a member of the GntR family of regulators. GaaR is shown to repress the expression of gaaPQM, and the repression is relieved in the presence of the substrate for GaaPQM. Moreover, GaaR is shown to bind putative promoter regions in the sequences required for galacturonic acid utilization. Finally, A. tumefaciens strains carrying a deletion of gaaPQM are more sensitive to galacturonate as an inducer of vir gene expression, while the overexpression of gaaPQM results in strains being less sensitive to this vir inducer. This supports a model in which transporter activity is crucial in ensuring that vir gene expression occurs only at sites of high ligand concentration, such as those at a plant wound site. Copyright © 2016, American Society for Microbiology. All Rights Reserved.

  20. Electrical properties of Ga ion beam implanted GaAs epilayer

    International Nuclear Information System (INIS)

    Hirayama, Yoshiro; Okamoto, Hiroshi

    1985-01-01

    Resistivity enhancement by 5 orders or more was realized by Ga focused ion beam implantation into n + and p + GaAs epilayers. For originally n + epilayers, this resistivity enhancement is maintained after annealing as high as 800 deg C. However this enhancement disappears after annealing at above 650 deg C for p + epilayer. This property makes GaAs high resistive only in a limited area whose minimum dimension is 0.1 μm or less, and is attractive for a device fabrication process to electrically isolate integrated elements. (author)

  1. Investigation of the radiation hardness of GaAs sensors in an electron beam

    CERN Document Server

    K. Afanaciev, K; P. Bernitt, P; G. Chelkov, G; J. Gajewski, J; M. Gostkin, M; Ch Grah, Ch; R. Heller, R; H. Henschel, H; A. Ignatenko, A; Z. Krumshteyn, Z; S. Kulis, S; W. Lange, W; W. Lohmann, W; D. Mokeev, D; V. Novikov, V; M. Ohlerich, M; A. Rosca, A; A. Sapronov, A; R.S. Schmidt, R S; S. Schuwalow, S; O. Tolbanov, O; A. Tyazhev, A

    2012-01-01

    A compact and finely grained sandwich calorimeter is designed to instrument the very forward region of a detector at a future e+e− collider. The calorimeter will be exposed to low energy e+e− pairs originating from beamstrahlung, resulting in absorbed doses of about one MGy per year. GaAs pad sensors interleaved with tungsten absorber plates are considered as an option for this calorimeter. Several Cr-doped GaAs sensor prototypes were produced and irradiated with 8.5–10 MeV electrons up to a dose of 1.5 MGy. The sensor performance was measured as a function of the absorbed dose.

  2. Dual-loss modulated Nd:GGG laser with Cr4+:YAG and GaAs

    Science.gov (United States)

    Qiao, Junpeng; Zhao, Jia; Li, Yufei; Zhao, Shengzhi; Yang, Kejian; Li, Guiqiu; Li, Dechun; Qiao, Wenchao; Li, Tao; Chu, Hongwei

    2014-12-01

    We demonstrate a diode-pumped dual-loss passively Q-switched and mode-locked (DP-QML) Nd:GGG laser by simultaneously employing Cr4+:YAG and GaAs as saturable absorbers. In comparison with single passively Q-switched and mode-locked (SP-QML) Nd:GGG laser with the Cr4+:YAG or GaAs, the maximum pulse width compression and the highest peak power improvement are 76.8% and 18.5 times in DP-QML laser, with the value of 67 ns and 2.9 kW, respectively.

  3. Stable Amplification and High Current Drop Bistable Switching in Supercritical GaAs Tills

    DEFF Research Database (Denmark)

    Izadpanah, S.H; Jeppsson, B; Jeppesen, Palle

    1974-01-01

    Bistable switching with current drops of 40% and switching times of 100 ps are obtained in pulsed operation of 10¿m supercritically doped n+ nn+ GaAs Transferred Electron Devices (TEDs). When CW-operated the same devices exhibit a 5-17 GHz bandwidth for the stable negative resistance.......Bistable switching with current drops of 40% and switching times of 100 ps are obtained in pulsed operation of 10¿m supercritically doped n+ nn+ GaAs Transferred Electron Devices (TEDs). When CW-operated the same devices exhibit a 5-17 GHz bandwidth for the stable negative resistance....

  4. The spectral resolution of high temperature GaAs photon counting soft X-ray photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Barnett, A.M., E-mail: amb67@le.ac.uk [Space Research Centre, Department of Physics and Astronomy, Michael Atiyah Building, University of Leicester, Leicester LE1 7RH (United Kingdom); Lees, J.E.; Bassford, D.J. [Space Research Centre, Department of Physics and Astronomy, Michael Atiyah Building, University of Leicester, Leicester LE1 7RH (United Kingdom); Ng, J.S.; Tan, C.H.; Babazadeh, N.; Gomes, R.B. [Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom)

    2011-10-21

    Circular mesa GaAs p{sup +}-i-n{sup +} diodes for photon counting soft X-ray spectroscopy have been fabricated and characterised over a temperature range of +80 to -30 {sup o}C. The spectroscopic performance of the diodes, as measured by the FWHM of the Mn K{sub {alpha}} X-ray line from an {sup 55}Fe radioisotope, is reported. In addition, we compare the GaAs diodes with previously fabricated and characterised Al{sub 0.8}Ga{sub 0.2}As p{sup +}-i-n{sup +} diodes of similar geometry.

  5. Molecular dynamics simulation of ion-beam-amorphization of Si, Ge and GaAs

    CERN Document Server

    Nord, J D; Keinonen, J

    2002-01-01

    We use molecular dynamics simulations to study ion-irradiation-induced amorphization in Si, Ge and GaAs using several different interatomic force models. We find that the coordination number is higher, and the average bond length longer, for the irradiated amorphous structures than for the molten ones in Si and Ge. For amorphous GaAs, we suggest that longer Ga-Ga bonds, also present in pure Ga, are produced during the irradiation. In Si the amorphization is found to proceed via growth of amorphous regions, and low energy recoils are found to induce athermal recrystallization during irradiation.

  6. The LDA+U calculation of electronic band structure of GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Bahuguna, B. P., E-mail: pk.svnit@gmail.com; Sharma, R. O.; Saini, L. K. [Applied Physics Department, Sardar Vallabhbhai National Institute of Technology, Surat-395007 (India)

    2016-05-06

    We present the electronic band structure of bulk gallium arsenide (GaAs) using first principle approach. A series of calculations has been performed by applying norm-conserving pseudopotentials and ultrasoft non-norm-conserving pseudopotentials within the density functional theory. These calculations yield too small band gap as compare to experiment. Thus, we use semiemperical approach called local density approximation plus the multi-orbital mean-field Hubbard model (LDA+U), which is quite effective in order to describe the band gap of GaAs.

  7. Modeling and Design of Graphene GaAs Junction Solar Cell

    Directory of Open Access Journals (Sweden)

    Yawei Kuang

    2015-01-01

    Full Text Available Graphene based GaAs junction solar cell is modeled and investigated by Silvaco TCAD tools. The photovoltaic behaviors have been investigated considering structure and process parameters such as substrate thickness, dependence between graphene work function and transmittance, and n-type doping concentration in GaAs. The results show that the most effective region for photo photogenerated carriers locates very close to the interface under light illumination. Comprehensive technological design for junction yields a significant improvement of power conversion efficiency from 0.772% to 2.218%. These results are in good agreement with the reported experimental work.

  8. Ab initio-based approach to structural change of compound semiconductor surfaces during MBE growth

    Science.gov (United States)

    Ito, Tomonori; Akiyama, Toru; Nakamura, Kohji

    2009-01-01

    Phase diagrams of GaAs and GaN surfaces are systematically investigated by using our ab initio-based approach in conjunction with molecular beam epitaxy (MBE). The phase diagrams are obtained as a function of growth parameters such as temperature and beam equivalent pressure (BEP). The versatility of our approach is exemplified by the phase diagram calculations for GaAs(0 0 1) surfaces, where the stable phases and those phase boundaries are successfully determined as functions of temperature and As 2 and As 4 BEPs. The initial growth processes are clarified by the phase diagram calculations for GaAs(1 1 1)B-(2×2). The calculated results demonstrate that the As-trimer desorption on the GaAs(1 1 1)B-(2×2) with Ga adatoms occurs beyond 500-700 K while the desorption without Ga adatoms does beyond 800-1000 K. This self-surfactant effect induced by Ga adsorption crucially affects the initial growth of GaAs on the GaAs(1 1 1)B-(2×2). Furthermore, the phase diagram calculations for GaN(0 0 0 1) suggests that Ga adsorption or desorption during GaN MBE growth can easily change the pseudo-(1×1) to the (2×2)-Ga via newly found (1×1) and vice versa. On the basis of this finding, the possibility of ghost island formation during MBE growth is discussed.

  9. Inductively Coupled Plasma Etching of III-V Semiconductors in BCl(3)-Based Chemistries: Part 1: GaAs, GaN, GaP, GaSb and AlGaAs

    Energy Technology Data Exchange (ETDEWEB)

    Abernathy, C.R,; Han, J.; Hobson, W.S.; Hong, J.; Lambers, E.S.; Lee, J.W.; Maeda, T.; Pearton, S.J.; Shul, R.J.

    1998-12-04

    BC13, with addition of Nz, Ar or Hz, is found to provide smooth anisotropic pattern transfer in GaAs, GaN, GaP, GaSb and AIGriAs under Inductively Coupled Plasma conditions, Maxima in the etch rates for these materials are observed at 33% N2 or 87$'40 Hz (by flow) addition to BC13, whereas Ar addition does not show this behavior. Maximum etch rates are typically much higher for GaAs, Gap, GaSb and AIGaAs (-1,2 @rein) than for GaN (-0.3 ymu'min) due to the higher bond energies of the iatter. The rates decrease at higher pressure, saturate with source power (ion flux) and tend to show maxima with chuck power (ion energy). The etched surfaces remain stoichiometric over abroad range of plasma conditions.

  10. CHEMICAL DISSOLUTION InAs, InSb, GaAs AND GaSb IN THE (NH42Cr2O7−HBr−H2O ETCHING COMPOSITIONS

    Directory of Open Access Journals (Sweden)

    I. V. Levchenko

    2017-09-01

    Full Text Available The features of InAs, InSb, GaAs, and GaSb dissolution in the (NH42Cr2O7−HBr−H2O etching compositions have been investigated. The chemical-dynamic polishing in the reproducible hydrodynamic conditions has been used. It was established that the arsenides etching rate changed similarly and achieved the maximum values in the oxidant saturated mixture (22 vol.%. It was found that the antimonides dissolution rate increases when the (NH42Cr2O7 concentration is increasing also. It was established that all etching compositions are polishing for InAs and GaAs, and in the case of InSb and GaSb the polishing solutions occupy about 50 % of the investigated concentrated regions. It was shown that the dissolution rate of all crystals decreases to 0,1 μm/min and the quality of the antimonides surface degrades when the H2O concentration is increasing. The substrates dissolution has the diffusion nature. Using metallographic analysis and atomic force microscopy it was confirmed a good quality of InAs, InSb, GaAs and GaSb surface obtained after chemical treatment in the (NH42Cr2O7−HBr−H2O polishing solutions.

  11. Acoustically induced spin transport in (110)GaAs quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Couto, Odilon D.D. Jr.

    2008-09-29

    In this work, we employ surface acoustic waves (SAWs) to transport and manipulate optically generated spin ensembles in (110) GaAs quantum wells (QWs). The strong carrier confinement into the SAW piezoelectric potential allows for the transport of spin-polarized carrier packets along well-defined channels with the propagation velocity of the acoustic wave. In this way, spin transport over distances exceeding 60 m is achieved, corresponding to spin lifetimes longer than 20 ns. The demonstration of such extremely long spin lifetimes is enabled by three main factors: (i) Suppression of the D'yakonov-Perel' spin relaxation mechanism for z-oriented spins in (110) IIIV QWs; (ii) Suppression of the Bir-Aronov-Pikus spin relaxation mechanism caused by the type-II SAW piezoelectric potential; (iii) Suppression of spin relaxation induced by the mesoscopic carrier confinement into narrow stripes along the SAW wave front direction. A spin transport anisotropy under external magnetic fields (B{sub ext}) is demonstrated for the first time. Employing the well-defined average carrier momentum impinged by the SAW, we analyze the spin dephasing dynamics during transport along the [001] and [1 anti 10] in-plane directions. For transport along [001], fluctuations of the internal magnetic field (B{sub int}), which arises from the spin-orbit interaction associated with the bulk inversion asymmetry of the crystal, lead to decoherence within 2 ns as the spins precess around B{sub ext}. In contrast, for transport along the [1 anti 10] direction, the z-component of the spin polarization is maintained for times one order of magnitude longer due to the non-zero average value of B{sub int}. The dephasing anisotropy between the two directions is fully understood in terms of the dependence of the spin-orbit coupling on carrier momentum direction, as predicted by the D'yakonov-Perel' mechanism for the (110) system. (orig.)

  12. Lithography-free shell-substrate isolation for core-shell GaAs nanowires.

    Science.gov (United States)

    Haggren, Tuomas; Perros, Alexander Pyymaki; Jiang, Hua; Huhtio, Teppo; Kakko, Joona-Pekko; Dhaka, Veer; Kauppinen, Esko; Lipsanen, Harri

    2016-07-08

    A facile and scalable lithography-free technique(5) for the rapid construction of GaAs core-shell nanowires incorporating shell isolation from the substrate is reported. The process is based on interrupting NW growth and applying a thin spin-on-glass (SOG) layer to the base of the NWs and resuming core-shell NW growth. NW growth occurred in an atmospheric pressure metalorganic vapour phase epitaxy (MOVPE) system with gold nanoparticles used as catalysts for the vapour-liquid-solid growth. It is shown that NW axial core growth and radial shell growth can be resumed after interruption and even exposure to air. The SOG residues and native oxide layer that forms on the NW surface are shown to prevent or perturb resumption of epitaxial NW growth if not removed. Both HF etching and in situ annealing of the air-exposed NWs in the MOVPE were shown to remove the SOG residues and native oxide layer. While both procedures are shown capable of removing the native oxide and enabling resumption of epitaxial NW growth, in situ annealing produced the best results and allowed construction of pristine core-shell NWs. No growth occurred on SOG and it was observed that axial NW growth was more rapid when a SOG layer covered the substrate. The fabricated p-core/n-shell NWs exhibited diode behaviour upon electrical testing. The isolation of the NW shells from the substrate was confirmed by scanning electron microscopy and electrical measurements. The crystal quality of the regrown core-shell NWs was verified with a high resolution transmission electron microscope. The reported technique potentially provides a pathway using MOVPE for scalable and high-throughput production of shell-substrate isolated core-shell NWs on an industrial scale.

  13. Intrinsic broadening of the mobility spectrum of bulk n-type GaAs

    International Nuclear Information System (INIS)

    Jolley, G; Umana-Membreno, G A; Akhavan, N D; Antoszewski, J; Faraone, L; Fischetti, M V

    2014-01-01

    Modern devices consisting of multiple semiconductor layers often result in the population of numerous distinct carrier species. Conventional Hall measurements at a single-magnetic-field strength provide only a weighted average of the electron mobility and carrier concentration of a semiconductor structure and, therefore, are of limited use for the extraction of carrier transport information. In recent years, mobility spectrum analysis techniques, which have been developed to extract a mobility spectrum from magnetic field-dependent conductivity-tensor measurements, have been applied in the analysis of carrier conductivity mechanisms of numerous semiconductor structures and devices. Currently there is a severe lack of reported studies on theoretical calculations of the mobility distribution of semiconductor structures or devices. In addition, the majority of reports on experimental mobility spectrum analysis are of complex, multi layered structures such as type-II superlattices, and the interpretation of the mobility spectra has been difficult. Therefore, a good understanding of the mobility spectrum has yet to be developed. For example, it is often assumed that distinct peaks of a mobility spectrum result from fundamentally different conduction mechanisms such as the bulk and surface conduction of narrow-band-gap semiconductors. In this article, we present calculations of the electron mobility distribution of bulk GaAs, which predict the existence of multiple mobility spectrum peaks that result from electron conductivity in the Γ conduction band. This report serves as an important and simple test case upon which experimentally measured mobility spectra can be compared. It also presents insight into the general nature of electron mobility distributions. (paper)

  14. Reactivity and control of III-V surfaces for passivation and Schottky barrier formation

    International Nuclear Information System (INIS)

    Bruno, Giovanni

    2004-01-01

    The N-for-As, P-for-As and Sb-for-As anion exchange reactions at GaAs surfaces, and the N-for-P anion exchange reaction at the GaP surface have been investigated with the aim at the formation of a thin high-gap surface layer for passivation of GaAs and GaP. Among the investigated anion exchange reactions, the P-for-As results in the formation of a ternary alloys GaP y As 1-y not effective for GaAs passivation. The Sb-for-As anion exchange does not occur and results in segregation of Sb at the GaAs surface. The Sb overlayer is effective in the chemical passivation of GaAs. The N-for-As anion exchange by a remote N 2 -H 2 (a mixture of 97% N 2 -3% H 2 ) radiofrequency plasma nitridation procedure forms a very thin (∼5 Angst) GaN layer that is successful in the electronic and chemical passivation of GaAs(1 0 0) surfaces. The N 2 -H 2 (a mixture of 97% N 2 -3% H 2 ) nitridation has been found completely different from the pure N 2 nitridation which, in contrast, do not provide GaAs passivation, because the formation of Ga-N bonds accompanies with AsN and the segregation of elemental As at the GaN/GaAs interface. GaAs-GaN based Schottky structures have also been deposited and characterized by I-V measurements. A chemical and kinetic mechanism for the anion exchange reactions which takes into account also the competitive formation of PAs, AsN, and PN isoelectronic compounds is proposed

  15. Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber

    Science.gov (United States)

    Cong, Wen; Li, Dechun; Zhao, Shengzhi; Yang, Kejian; Li, Xiangyang; Qiao, Hui; Liu, Ji

    2014-12-01

    Passive Q-switching of a diode-pumped Nd:GGG laser is demonstrated using Bi-doped GaAs as saturable absorber. The Bi-doped GaAs wafer is fabricated by ion implantation and subsequent annealing. Compared with the Q-switched laser by undoped GaAs semiconductor saturable absorber, the laser with Bi-doped GaAs as saturable absorber can produce higher output power, shorter pulses, higher single pulse energies and higher peak powers. These results suggest that Bi-doped GaAs can be a promising new candidate of semiconductor saturable absorber in Q-switched laser.

  16. Passively Q-switched and mode-locked Nd:GGG laser with a Bi-doped GaAs saturable absorber.

    Science.gov (United States)

    Cong, Wen; Li, Dechun; Zhao, Shengzhi; Yang, Kejian; Li, Xiangyang; Qiao, Hui; Liu, Ji

    2014-06-16

    A simultaneously passively Q-switched and mode-locked (QML) Nd:GGG laser using a Bi-doped GaAs wafer as saturable absorber is accomplished for the first time. The Bi-doped GaAs wafer is fabricated by ion implantation and subsequent annealing. In comparison to the passively QML laser with GaAs, the QML laser with Bi-doped GaAs can generate more stable pulses with 99% modulation depth. The experiment results indicate that the Bi-doped GaAs could be an excellent saturable absorber for diode-pumped QML lasers.

  17. Control of threading dislocations by strain engineering in GaInP buffers grown on GaAs substrates

    Energy Technology Data Exchange (ETDEWEB)

    Li, K.L., E-mail: klli2010@sinano.ac.cn [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Sun, Y.R. [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Dong, J.R. [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); He, Y.; Zeng, X.L. [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Zhao, Y.M.; Yu, S.Z.; Zhao, C.Y. [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China)

    2015-10-30

    High quality strain-relaxed In0.3Ga0.7As layers with threading dislocation density about 2 × 10{sup 6} cm{sup −2} and root-mean-square surface roughness below 8.0 nm were obtained on GaAs substrates using compositionally undulating step-graded Ga{sub 1−x}In{sub x}P (x = 0.48–0.78) buffers. The transmission electron microscopy results reveal that the conventional step-graded GaInP buffers produce high density dislocation pile-ups, which are induced by the blocking effect of the nonuniform misfit dislocation strain field and crosshatched surface on the gliding of threading dislocations. In contrast, due to strain compensation, insertion of the tensile GaInP layers decreases the surface roughness and promotes dislocation annihilation in the interfaces, and eventually reduces the threading dislocation density. This provides a promising way to achieve a virtual substrate with the desired lattice parameter for metamorphic device applications. - Highlights: • Metamorphic GaInP buffers were grown by metal–organic chemical vapor deposition. • The compositionally undulating buffers effectively reduce the threading dislocation density. • High quality strain-relaxed In{sub 0.3}Ga{sub 0.7}As layers were obtained.

  18. Control of threading dislocations by strain engineering in GaInP buffers grown on GaAs substrates

    International Nuclear Information System (INIS)

    Li, K.L.; Sun, Y.R.; Dong, J.R.; He, Y.; Zeng, X.L.; Zhao, Y.M.; Yu, S.Z.; Zhao, C.Y.

    2015-01-01

    High quality strain-relaxed In0.3Ga0.7As layers with threading dislocation density about 2 × 10 6 cm −2 and root-mean-square surface roughness below 8.0 nm were obtained on GaAs substrates using compositionally undulating step-graded Ga 1−x In x P (x = 0.48–0.78) buffers. The transmission electron microscopy results reveal that the conventional step-graded GaInP buffers produce high density dislocation pile-ups, which are induced by the blocking effect of the nonuniform misfit dislocation strain field and crosshatched surface on the gliding of threading dislocations. In contrast, due to strain compensation, insertion of the tensile GaInP layers decreases the surface roughness and promotes dislocation annihilation in the interfaces, and eventually reduces the threading dislocation density. This provides a promising way to achieve a virtual substrate with the desired lattice parameter for metamorphic device applications. - Highlights: • Metamorphic GaInP buffers were grown by metal–organic chemical vapor deposition. • The compositionally undulating buffers effectively reduce the threading dislocation density. • High quality strain-relaxed In 0.3 Ga 0.7 As layers were obtained.

  19. Direct evidence for the β-hydride elimination mechanism in the decomposition of triethylgallium on GaAs(100)

    Science.gov (United States)

    Wong, K. C.; McEllistrem, M. T.; McBurnett, B. G.; Culp, R. D.; Cowley, A. H.; Ekerdt, J. G.

    1998-01-01

    Decomposition of the surface ethyl group formed by dissociative adsorption of triethylgallium (TEGa) on GaAs(100) is investigated using temperature programmed desorption. Deuterium labeling indicates that decomposition of the surface ethyl group proceeds exclusively through a β-hydride elimination reaction mechanism without any scrambling between α- and β-hydrogens. For undeuterated TEGa (TEGa-d 0), the surface ethyl group decomposes and desorbs simultaneously as C 2H 4 and H 2 at 600 K. For perdeuterated TEGa (TEGa-d 15), the desorption of C 2D 4 and D 2 occurs at a slightly higher temperature (630 K). Partially deuterated TEGa (TEGa-d 6), with deuterium on the α-carbons, results in H 2 and C 2H 2D 2 as desorption products at 600 K. A kinetic isotope effect of 8 ± 5 kJ mol -1 for hydride versus deuteride transfer is determined, which is consistent with cleavage of the C βH bond in the transition state, and with tunneling.

  20. Surface Modification of Sputtered Ga.5In.5Sb Thin Films ISHU ...

    African Journals Online (AJOL)

    MICHAEL

    IR detectors useful for fiber optic communication. Since the efficiency of detector depends very much on the surface properties of the substrate material, improvement of substrate surfaces is a challenging task in device technology. Reports on the improved electrical properties of GaAs and InP surfaces by. Ru3+ modification ...

  1. Production of a functional human acid maltase in tobacco seeds: biochemical analysis, uptake by human GSDII cells, and in vivo studies in GAA knockout mice.

    Science.gov (United States)

    Martiniuk, Frank; Reggi, Serena; Tchou-Wong, Kam-Meng; Rom, William N; Busconi, Matteo; Fogher, Corrado

    2013-10-01

    Genetic deficiency of acid alpha glucosidase (GAA) results in glycogen storage disease type II (GSDII) or Pompe's disease. To investigate whether we could generate a functional recombinant human GAA enzyme (tobrhGAA) in tobacco seeds for future enzyme replacement therapy, we subcloned the human GAA cDNA into the plant expression plasmid-pBI101 under the control of the soybean β-conglycinin seed-specific promoter and biochemically analyzed the tobrhGAA. Tobacco seeds contain the metabolic machinery that is more compatible with mammalian glycosylation-phosphorylation and processing. We found the tobrhGAA to be enzymatically active was readily taken up by GSDII fibroblasts and in white blood cells from whole blood to reverse the defect. The tobrhGAA corrected the enzyme defect in tissues at 7 days after a single dose following intraperitoneal (IP) administration in GAA knockout (GAA(-/-)) mice. Additionally, we could purify the tobrhGAA since it bound tightly to the matrix of Sephadex G100 and can be eluted by competition with maltose. These data demonstrate indirectly that the tobrhGAA is fully functional, predominantly proteolytically cleaved and contains the minimal phosphorylation and mannose-6-phosphate residues essential for biological activity.

  2. Photoelectrochemical Water Oxidation by GaAs Nanowire Arrays Protected with Atomic Layer Deposited NiO x Electrocatalysts

    Science.gov (United States)

    Zeng, Joy; Xu, Xiaoqing; Parameshwaran, Vijay; Baker, Jon; Bent, Stacey; Wong, H.-S. Philip; Clemens, Bruce

    2018-02-01

    Photoelectrochemical (PEC) hydrogen production makes possible the direct conversion of solar energy into chemical fuel. In this work, PEC photoanodes consisting of GaAs nanowire (NW) arrays were fabricated, characterized, and then demonstrated for the oxygen evolution reaction (OER). Uniform and periodic GaAs nanowire arrays were grown on a heavily n-doped GaAs substrates by metal-organic chemical vapor deposition selective area growth. The nanowire arrays were characterized using cyclic voltammetry and impedance spectroscopy in a non-aqueous electrochemical system using ferrocene/ferrocenium (Fc/Fc+) as a redox couple, and a maximum oxidation photocurrent of 11.1 mA/cm2 was measured. GaAs NW arrays with a 36 nm layer of nickel oxide (NiO x ) synthesized by atomic layer deposition were then used as photoanodes to drive the OER. In addition to acting as an electrocatalyst, the NiO x layer served to protect the GaAs NWs from oxidative corrosion. Using this strategy, GaAs NW photoanodes were successfully used for the oxygen evolution reaction. This is the first demonstration of GaAs NW arrays for effective OER, and the fabrication and protection strategy developed in this work can be extended to study any other nanostructured semiconductor materials systems for electrochemical solar energy conversion.

  3. Page 1 114 S K Roy and J P Banerjee GaAs impatt devices for ...

    Indian Academy of Sciences (India)

    orientation have been taken from experimental data (Ito et al 1978). The ionization rate constants A, , and B, , in (100) InP have been obtained from the ... The negative differential mobility in the electron drift velocity versus electric field characteristics of GaAs and InP has been taken into account in the computer analysis ...

  4. Layer-resolved photoelectron diffraction: electron attenuation anisotropy in GaAs

    Czech Academy of Sciences Publication Activity Database

    Bartoš, Igor; Cukr, Miroslav; Jiříček, Petr

    2012-01-01

    Roč. 185, 5-7 (2012), 184-187 ISSN 0368-2048 Grant - others:AVČR(CZ) Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : low-energy electron attenuation in GaAs * layer-resolved photoelectron diffraction * synchrotron radiation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.706, year: 2012

  5. An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Dikareva, N. V. [Lobachevsky State University of Nizhny Novgorod, Physical Technical Research Institute (Russian Federation); Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Lobachevsky State University of Nizhny Novgorod, Physical Technical Research Institute (Russian Federation); Kudryavtsev, K. E. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Nekorkin, S. M. [Lobachevsky State University of Nizhny Novgorod, Physical Technical Research Institute (Russian Federation)

    2015-02-15

    A light-emitting diode structure based on GaAs with eight narrow Ge quantum wells is grown by laser sputtering. An electroluminescence line polarized predominately in the plane parallel to the constituent layers of the structure is revealed. The line corresponds to the direct optical transitions in momentum space in the Ge quantum wells.

  6. Variations in first principles calculated defect energies in GaAs and ...

    Indian Academy of Sciences (India)

    Abstract. There is an abundant literature on calculations of formation and ionization energies of point defects in GaAs. Since most of these energies, especially the formation energies, are difficult to measure, the calculations are primary means of obtaining their values. However, based on the assumptions of the calcula-.

  7. The Creation of Multimedia Resources to Support the Gaelic Athletic Association (GAA) Coach Education Programme (CEP)

    Science.gov (United States)

    Crotty, Yvonne; D'Arcy, Jimmy; Sweeney, David

    2016-01-01

    The Gaelic Athletic Association (GAA) is an Irish amateur sporting and cultural organisation. It represents in excess of 20,000 teams nationwide and is committed to supporting the development of players and coaches through its Coach Education Programme (CEP). A strategic goal of the CEP is to supplement the traditional field based coach education…

  8. Three-fold Symmetric Doping Mechanism in GaAs Nanowires

    DEFF Research Database (Denmark)

    Dastjerdi, M.H.T.; Fiordaliso, Elisabetta Maria; Leshchenko, E.D.

    2017-01-01

    A new dopant incorporation mechanism in Ga-assisted GaAs nanowires grown by molecular beam epitaxy is reported. Off-axis electron holography revealed that p-type Be dopants introduced in situ during molecular beam epitaxy growth of the nanowires were distributed inhomogeneously in the nanowire cr...

  9. Spin-Relaxation Anisotropy in a GaAs Quantum Dot

    NARCIS (Netherlands)

    Scarlino, P.; Kawakami, E.; Stano, P.; Shafiei, M.; Reichl, C.; Wegscheider, W.; Vandersypen, L.M.K.

    2014-01-01

    We report that the electron spin-relaxation time T1 in a GaAs quantum dot with a spin-1/2 ground state has a 180° periodicity in the orientation of the in-plane magnetic field. This periodicity has been predicted for circular dots as being due to the interplay of Rashba and Dresselhaus spin orbit

  10. Spin-Dephasing Anisotropy for Electrons in a Diffusive Quasi-1D GaAs Wire

    NARCIS (Netherlands)

    Liu, J.; Last, T.; Koop, E. J.; Denega, S.; van Wees, B. J.; van der Wal, C. H.

    We present a numerical study of dephasing of electron spin ensembles in a diffusive quasi-one-dimensional GaAs wire due to the D'yakonov-Perel' spin-dephasing mechanism. For widths of the wire below the spin precession length and for equal strength of Rashba and linear Dresselhaus spin-orbit fields

  11. Transient four-wave mixing in T-shaped GaAs quantum wires

    DEFF Research Database (Denmark)

    Langbein, Wolfgang Werner; Gislason, Hannes; Hvam, Jørn Märcher

    1999-01-01

    The binding energy of excitons and biexcitons and the exciton dephasing in T-shaped GaAs quantum wires is investigated by transient four-wave mixing. The T-shaped structure is fabricated by cleaved-edge overgrowth, and its geometry is engineered to optimize the one-dimensional confinement...

  12. Enhancement of conductance of GaAs sub-microwires under external stimuli

    Science.gov (United States)

    Qu, Xianlin; Deng, Qingsong; Zheng, Kun

    2018-03-01

    Semiconductors with one dimension on the micro-nanometer scale have many unique physical properties that are remarkably different from those of their bulk counterparts. Moreover, changes in the external field will further modulate the properties of the semiconductor micro-nanomaterials. In this study, we used focused ion beam technology to prepare freestanding ⟨111⟩-oriented GaAs sub-microwires from a GaAs substrate. The effects of laser irradiation and bending or buckling deformation induced by compression on the electrical transport properties of an individual GaAs sub-microwire were studied. The experimental results indicate that both laser irradiation and bending deformation can enhance their electrical transport properties, the laser irradiation resulted in a conductance enhancement of ˜30% compared to the result with no irradiation, and in addition, bending deformation changed the conductance by as much as ˜180% when the average strain was approximately 1%. The corresponding mechanisms are also discussed. This study provides beneficial insight into the fabrication of electronic and optoelectronic devices based on GaAs micro/nano-wires.

  13. Photoluminescence studies of GaAs grown on InP substrates by molecular beam epitaxy

    Science.gov (United States)

    Huang, D.; Agarwala, S.; Morkoc, H.

    1989-01-01

    GaAs-based field-effect transistor structures have been grown on InP substrates with the InGaAs/GaAs strained-layer superlattices and 1.5 micron GaAs layer as the buffer. The low-temperature (4 K) photoluminescence (PL) from this GaAs buffer has been studied for the first time. Among five observable peaks, the excitonic transition at energy 1.513 eV and the impurity associated recombination at energy 1.483 eV have been identified with the aid of reflection, absorption, and temperature and excitation-intensity dependent PL measurements. The peak at 1.504 eV, most probably due to an exciton bound to a defect, is greatly enhanced compared with that of homoepitaxially grown GaAs. The optical results show that GaAs films of good quality can be grown on InP substrate, which is consistent with device results.

  14. Simulation of a Nonlinear GaAs MESFET Model for use in the ...

    African Journals Online (AJOL)

    A computer program has been developed that performs a large-signal simulation of a GaAs Metal-Semiconductor-Field-Effect-Transistor (MESFET) using the Curtice-Ettenberg model [1]. The model is then used to design non-linear microwave circuits such as frequency multipliers and power amplifiers. The simulation ...

  15. Electric field effect of GaAs monolayer from first principles

    Directory of Open Access Journals (Sweden)

    Jiongyao Wu

    2017-03-01

    Full Text Available Using first-principle calculations, we investigate two-dimensional (2D honeycomb monolayer structures composed of group III-V binary elements. It is found that such compound like GaAs should have a buckled structure which is more stable than graphene-like flat structure. This results a polar system with out-of-plane dipoles arising from the non-planar structure. Here, we optimized GaAs monolayer structure, then calculated the electronic band structure and the change of buckling height under external electric field within density functional theory using generalized gradient approximation method. We found that the band gap would change proportionally with the electric field magnitude. When the spin-orbit coupling (SOC is considered, we revealed fine spin-splitting at different points in the reciprocal space. Furthermore, the valence and conduction bands spin-splitting energies due to SOC at the K point of buckled GaAs monolayers are found to be weakly dependent on the electric field strength. Finally electric field effects on the spin texture and second harmonic generation are discussed. The present work sheds light on the control of physical properties of GaAs monolayer by the applied electric field.

  16. Temperature and 8 MeV electron irradiation effects on GaAs solar cells

    Indian Academy of Sciences (India)

    Abstract. GaAs solar cells hold the record for the highest single band-gap cell efficiency. Successful application of these cells in advanced space-borne systems demand character- ization of cell properties like dark current under different ambient conditions and the stability of the cells against particle irradiation in space.

  17. GaAs detectors with an ultra-thin Schottky contact for spectrometry of charged particles

    Energy Technology Data Exchange (ETDEWEB)

    Chernykh, S.V., E-mail: chsv_84@mail.ru [National University of Science and Technology “MISIS”, Moscow (Russian Federation); Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Chernykh, A.V. [National University of Science and Technology “MISIS”, Moscow (Russian Federation); Didenko, S.I.; Baryshnikov, F.M. [National University of Science and Technology “MISIS”, Moscow (Russian Federation); Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Burtebayev, N. [Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Institute of Nuclear Physics, Almaty (Kazakhstan); Britvich, G.I. [Institute of High Energy Physics, Protvino, Moscow region (Russian Federation); Chubenko, A.P. [Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow (Russian Federation); Guly, V.G.; Glybin, Yu.N. [LLC “SNIIP Plus”, Moscow (Russian Federation); Zholdybayev, T.K.; Burtebayeva, J.T.; Nassurlla, M. [Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Institute of Nuclear Physics, Almaty (Kazakhstan)

    2017-02-11

    For the first time, samples of particle detectors based on high-purity GaAs epilayers with an active area of 25 and 80 mm{sup 2} and an ultra-thin Pt Schottky barrier were fabricated for use in the spectrometry of charged particles and their operating characteristics were studied. The obtained FWHM of 14.2 (for 25 mm{sup 2} detector) and 15.5 keV (for 80 mm{sup 2} detector) on the 5.499 MeV line of {sup 238}Pu is at the level of silicon spectrometric detectors. It was found that the main component that determines the energy resolution of the detector is a fluctuation in the number of collected electron–hole pairs. This allows us to state that the obtained energy resolution is close to the limit for VPE GaAs. - Highlights: • VPE GaAs particle detectors with an active area of 25 and 80 mm{sup 2} were fabricated. • 120 Å ultra-thin Pt Schottky barrier was used as a rectifying contact. • The obtained FWHM of 14.2 keV ({sup 238}Pu) is at the level of Si spectrometric detectors. • Various components of the total energy resolution were analyzed. • It was shown that obtained energy resolution is close to its limit for VPE GaAs.

  18. GaAs Multiplexers for VLWIR Detector Readout Below 10 Kelvin

    Science.gov (United States)

    Cunningham, T.; Fitzsimmons, M. J.

    1997-01-01

    A multiplexer and buffer based on GaAs JFET technology is presented. This multiplexer operates normally from room temperature down to 4 Kelvin and is suitable for the readout of Very Long Wavelength Infrared Detectors that must be cooled to below 10 Kelvin.

  19. Heat load of a GaAs photocathode in an SRF electron gun

    International Nuclear Information System (INIS)

    Wang Erdong; Zhao Kui; Jorg Kewisch; Ilan Ben-Zvi; Andrew Burrill; Trivini Rao; Wu Qiong; Animesh Jain; Ramesh Gupta; Doug Holmes

    2011-01-01

    A great deal of effort has been made over the last decades to develop a better polarized electron source for high energy physics. Several laboratories operate DC guns with a gallium arsenide photocathode, which yield a highly polarized electron beam. However, the beam's emittance might well be improved by using a superconducting radio frequency (SRF) electron gun, which delivers beams of a higher brightness than that from DC guns because the field gradient at the cathode is higher. SRF guns with metal and CsTe cathodes have been tested successfully. To produce polarized electrons, a Gallium-Arsenide photo-cathode must be used: an experiment to do so in a superconducting RF gun is under way at BNL. Since a bulk gallium arsenide (GaAs) photocathode is normal conducting, a problem arises from the heat load stemming from the cathode. We present our measurements of the electrical resistance of GaAs at cryogenic temperatures, a prediction of the heat load and verification by measuring the quality factor of the gun with and without the cathode at 2 K. We simulate heat generation and flow from the GaAs cathode using the ANSYS program. By following the findings with the heat load model, we designed and fabricated a new cathode holder (plug) to decrease the heat load from GaAs. (authors)

  20. Conversion Matrix Analysis of GaAs HEMT Active Gilbert Cell Mixers

    DEFF Research Database (Denmark)

    Jiang, Chenhui; Johansen, Tom Keinicke; Krozer, Viktor

    2006-01-01

    In this paper, the nonlinear model of the GaAs HEMT active Gilbert cell mixer is investigated. Based on the model, the conversion gain expression of active Gilbert cell mixers is derived theoretically by using conversion matrix analysis method. The expression is verified by harmonic balance...

  1. Wideband Monolithic Microwave Integrated Circuit Frequency Converters with GaAs mHEMT Technology

    DEFF Research Database (Denmark)

    Krozer, Viktor; Johansen, Tom Keinicke; Djurhuus, Torsten

    2005-01-01

    We present monolithic microwave integrated circuit (MMIC) frequency converter, which can be used for up and down conversion, due to the large RF and IF port bandwidth. The MMIC converters are based on commercially available GaAs mHEMT technology and are comprised of a Gilbert mixer cell core...

  2. A 2.5 gb/s GaAs ATM Mux Demux ASIC

    DEFF Research Database (Denmark)

    Madsen, Jens Kargaard; Lassen, Peter Stuhr

    1995-01-01

    This paper describes the design and implementation of a high speed GaAs ATM Mux Demur ASIC (AMDA) which is the key element in a high speed ATM Add-Drop unit. This unit is used in a new distributed ATM multiplexing-demultiplexing architecture for broadband switching systems. The Add-Drop unit...

  3. Set of X-Band distributed absorptive limiter GaAs MMICs

    NARCIS (Netherlands)

    Maas, A.P.M.; Janssen, J.P.B.; Vliet, F.E. van

    2007-01-01

    A set of X-band absorptive limiter GaAs MMICs has been designed and realised using both the PPH25x foundry process from UMS and the PP50-10 process from WIN semiconductors. The innovative limiter concepts have been extensively characterised by both pulsed and CW measurements. Both passive and active

  4. Capacitance-voltage characteristics of GaAs ion-implanted structures

    Directory of Open Access Journals (Sweden)

    Privalov E. N.

    2008-08-01

    Full Text Available A noniterative numerical method is proposed to calculate the barrier capacitance of GaAs ion-implanted structures as a function of the Schottky barrier bias. The features of the low- and high-frequency capacitance-voltage characteristics of these structures which are due to the presence of deep traps are elucidated.

  5. High-Performance GaAs Nanowire Solar Cells for Flexible and Transparent Photovoltaics.

    Science.gov (United States)

    Han, Ning; Yang, Zai-xing; Wang, Fengyun; Dong, Guofa; Yip, SenPo; Liang, Xiaoguang; Hung, Tak Fu; Chen, Yunfa; Ho, Johnny C

    2015-09-16

    Among many available photovoltaic technologies at present, gallium arsenide (GaAs) is one of the recognized leaders for performance and reliability; however, it is still a great challenge to achieve cost-effective GaAs solar cells for smart systems such as transparent and flexible photovoltaics. In this study, highly crystalline long GaAs nanowires (NWs) with minimal crystal defects are synthesized economically by chemical vapor deposition and configured into novel Schottky photovoltaic structures by simply using asymmetric Au-Al contacts. Without any doping profiles such as p-n junction and complicated coaxial junction structures, the single NW Schottky device shows a record high apparent energy conversion efficiency of 16% under air mass 1.5 global illumination by normalizing to the projection area of the NW. The corresponding photovoltaic output can be further enhanced by connecting individual cells in series and in parallel as well as by fabricating NW array solar cells via contact printing showing an overall efficiency of 1.6%. Importantly, these Schottky cells can be easily integrated on the glass and plastic substrates for transparent and flexible photovoltaics, which explicitly demonstrate the outstanding versatility and promising perspective of these GaAs NW Schottky photovoltaics for next-generation smart solar energy harvesting devices.

  6. Effect of thermal annealing on optical properties of implanted GaAs

    NARCIS (Netherlands)

    Kulik, M; Komarov, FF; Maczka, D

    GaAs samples doped with indium atoms by ion implantation and thermal annealed were studied using a channelling method, Rutherford backscattering, and an ellipsometry. From these measurements it was observed that the layer implanted with 3 x 10(16) cm(-2) indium dose was totally damaged and its

  7. Modification of the Absorption Edge of GaAs Arising from Hot-Electron Effects

    DEFF Research Database (Denmark)

    McGroddy, J. C.; Christensen, Ove

    1973-01-01

    We have observed a large enhancement of the electric-field-induced optical absorption arising from hot-electron effects in n-type GaAs at 77 K. The magnitude and field dependence of the enhancement can be approximately accounted for by a theory attributing the effect to broadening of the final...

  8. Very Heavily Doped N-Type GaAs Obtained With Pulsed Laser Annealing

    Science.gov (United States)

    Rys, Andrzej; Chin, Tim; Compaan, Alvin; Bhat, Ajit

    1988-08-01

    A study of carrier activation and mobility was performed in pulsed laser annealed samples of GaAs implanted with doses of Si and Se from 2.2x1012 to 6.0x1014 cm-2. The samples were annealed using a pulsed XeCl excimer laser ( λ=308 nm) and a pulsed dye laser ( λ=728 nm) with energy densities from 0.1 to 0.9 J/cm2 and a 10 nsec pulse. Very high carrier concentrations of 3x1019 and 1.5x1019 cm-3 were obtained for best n-type GaAs samples annealed with the dye laser and excimer laser, respectively. Dye laser consistently produced higher activation than excimer laser annealing. A transient reflectivity experiment was performed to identify the GaAs melt threshold and the melt phase dynamics of the GaAs,under the nitride cap. The threshold energies for cap damage were 0.34 and 0.12 J/cm2 for excimer and dye lasers, respectively. High carrier activation, as measured by Van der Pauw method, was achieved even for lightly doped samples although the room temperature Hall mobility was low. Raman spectroscopy was used to identify the threshold energies for the GaAs implant layer recrystallization and for optimum carrier activation.

  9. The Grotesques of Oval Defects on the MBE-Grown GaAs Layers

    Science.gov (United States)

    Chou, Y. C.; Lee, C. T.

    1987-05-01

    In addition to the regular oval defect, two grotesque features, named pyramidal and ellipsoidal shaped defects, have been observed on MBE-grown GaAs layers. Those grotesque defects were demonstrated to have come from a foreign contamination of the Ga source. A method for reducing those defects is also proposed.

  10. Temperature dependence of lattice parameter of (Ga,Mn)As on GaAs substrate

    Science.gov (United States)

    Matsukura, Fumihiro; Ohno, Hideo

    2015-09-01

    We measure the temperature dependence of the lattice parameter of (Ga,Mn)As by X-ray diffraction. The result shows that the lattice parameter of (Ga,Mn)As shows similar temperature dependence to that of GaAs, and no obvious change is observed in the vicinity of its Curie temperature.

  11. Wavelength dependent laser-induced etching of Cr–O doped GaAs ...

    Indian Academy of Sciences (India)

    Administrator

    sub-bandgap photon illumination the etching process starts vigorously through the mediation of intermediate defect states. The defect states initiate the pits formation and subsequently pore propagation occurs due to asymmetric electric field in the pore. Formation of GaAs nanostructures is observed using scanning electron.

  12. X-ray diffraction study on pressure-induced phase transformation in nanocrystalline GaAs

    DEFF Research Database (Denmark)

    Jiang, Jianzhong; Olsen, J. S.; Gerward, Leif

    2002-01-01

    We have shown that the onset and transition pressures of the GaAs I --> II transition are 17 GPa and 20 GPa, respectively, for both bulk and nanophase material. The observed gradual change in resistivity of nanophase GaAs,at the semiconductor-to-metal transition is explained by the two...

  13. Temperature and 8 MeV electron irradiation effects on GaAs solar cells

    Indian Academy of Sciences (India)

    GaAs solar cells hold the record for the highest single band-gap cell efficiency. Successful application of these cells in advanced space-borne systems demand characterization of cell properties like dark current under different ambient conditions and the stability of the cells against particle irradiation in space. In this paper ...

  14. Studying the hydrological cycle in the Iberian Peninsula using the LEAFHYDRO LSM: Influence of groundwater dynamics on soil moisture and land-atmosphere coupling. Impacts of artificial water extraction in the regional water cycle, including land-surface f

    Science.gov (United States)

    Martinez, A.; Miguez-Macho, G.

    2012-04-01

    We perform long-term (10 year) simulations over the Iberian Peninsula at 2.5 km resolution with the LEAFHYDRO LSM, which includes groundwater dynamics and river routing. Atmospheric forcing comes from ERA-interim and a regional high-resolution analysis of precipitation over Spain and Portugal. The model simulates the coupled evolution of the groundwater, land surface (soil moisture and vegetation) and river reservoirs and we validate the simulation with all available observations of river flow and water table depth. In an experiment, we impose an artificial water extraction rate from the groundwater reservoir based on observations and estimations of irrigation withdrawals and we investigate the impact on the regional water cycle. The extraction rates induce a depression of the water table that over the years becomes quite significant and that matches observed decreasing rates of water table levels. The depressed water table discontinues groundwater input into rivers and the stream flow is diminished notably, in particular during the dry summer. Moreover, in areas with semiarid climate where the water table was naturally relatively shallow and connected to soil moisture and vegetation, which include most of the agricultural areas inland Spain, the depression of the water table has a significant impact on soil moisture and land-surface fluxes, with a decrease of root zone soil water availability and evapotranspiration and increasing water stress for the vegetation. The land hydrology alteration is more pronounced in the summer when there is an absence of precipitation, and as the model shows, through the induced changes in land-surface fluxes can potentially have a noticeably impact on the regional climate.

  15. Simulated and experimental spectroscopic performance of GaAs X-ray pixel detectors

    International Nuclear Information System (INIS)

    Bisogni, M.G.; Cola, A.; Fantacci, M.E.

    2001-01-01

    In pixel detectors, the electrode geometry affects the signal shape and therefore the spectroscopic performance of the device. This effect is enhanced in semiconductors where carrier trapping is relevant. In particular, semi insulating (SI) GaAs crystals present an incomplete charge collection due to a high concentration of deep traps in the bulk. In the last few years, SI GaAs pixel detectors have been developed as soft X-ray detectors for medical imaging applications. In this paper, we present a numerical method to evaluate the local charge collection properties of pixel detectors. A bi-dimensional description has been used to represent the detector geometry. According to recent models, the active region of a reverse biased SI GaAs detector is almost neutral. Therefore, the electrostatic potential inside a full active detector has been evaluated using the Laplace equation. A finite difference method with a fixed step orthogonal mesh has been adopted. The photon interaction point has been generated with a Monte Carlo method according to the attenuation length of a monochromatic X-ray beam in GaAs. The number of photogenerated carriers for each interaction has been extracted using a gaussian distribution. The induced signal on the collecting electrode has been calculated according to the Ramo's theorem and the trapping effect has been modeled introducing electron and hole lifetimes. The noise of the charge preamplifier have been also taken into account. A comparison between simulated and experimental X-ray spectra from a 241 Am source acquired with different GaAs pixel detectors has been carried out

  16. Interfacial stress field generate by a biperiodic hexagonal network of misfit dislocations in a thin bicristal InAs/(111GaAs

    Directory of Open Access Journals (Sweden)

    Outtas, T.

    2004-04-01

    Full Text Available The elastic interactions generated by the presence of a biperiodic network, more precisely hexagonal, of misfit dislocations in the interfacing of a thin bicristal have been simulated numerically while considering an anisotropic elasticity for each crystal. The representation of the normal equi-stress near the dislocation segments and near of the triple node of hexagonal cell permits to detect the stress concentration zone du to elastic field for InAs/(111GaAs system, because, in the category of semiconductors, this is an ideal system which exhibit the presence of edge dislocations type parallels to the free surfaces by S.T.M.[1].

    Las interacciones elásticas generadas por la presencia de una red biperiódica, de dislocaciones en la interfase de un bicristal han sido simuladas numéricamente, considerando elasticidad anisotropa para cada cristal. La representación de las tensiones próximas a las dislocaciones y del nodo triple de la celda hexagonal, permite detectar la zona de concentración de tensiones debido al campo elástico para el sistema InAS/(111 GaAS, ya que, en los semiconductores, éste es un sistema ideal que muestra la presencia de dislocaciones paralelas a las superficies libres por S.T.M.[1].

  17. Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100 and (311A GaAs substrates by MBE

    Directory of Open Access Journals (Sweden)

    Henini Mohamed

    2011-01-01

    Full Text Available Abstract The growth of high mobility two-dimensional hole gases (2DHGs using GaAs-GaAlAs heterostructures has been the subject of many investigations. However, despite many efforts hole mobilities in Be-doped structures grown on (100 GaAs substrate remained considerably lower than those obtained by growing on (311A oriented surface using silicon as p-type dopant. In this study we will report on the properties of hole traps in a set of p-type Be-doped Al0.29Ga0.71As samples grown by molecular beam epitaxy on (100 and (311A GaAs substrates using deep level transient spectroscopy (DLTS technique. In addition, the effect of the level of Be-doping concentration on the hole deep traps is investigated. It was observed that with increasing the Be-doping concentration from 1 × 1016 to 1 × 1017 cm-3 the number of detected electrically active defects decreases for samples grown on (311A substrate, whereas, it increases for (100 orientated samples. The DLTS measurements also reveal that the activation energies of traps detected in (311A are lower than those in (100. From these findings it is expected that mobilities of 2DHGs in Be-doped GaAs-GaAlAs devices grown on (311A should be higher than those on (100.

  18. Design and comparison of GaAs, GaAsP and InGaAlAs quantum-well active regions for 808-nm VCSELs.

    Science.gov (United States)

    Zhang, Yan; Ning, Yongqiang; Zhang, Lisen; Zhang, Jinsheng; Zhang, Jianwei; Wang, Zhenfu; Zhang, Jian; Zeng, Yugang; Wang, Lijun

    2011-06-20

    Vertical-cavity surface-emitting lasers emitting at 808 nm with unstrained GaAs/Al0.3Ga0.7As, tensilely strained GaAs(x)P(1-x)/Al0.3Ga0.7As and compressively strained In(1-x-y)Ga(x)Al(y)As/Al0.3Ga0.7As quantum-well active regions have been investigated. A comprehensive model is presented to determine the composition and width of these quantum wells. The numerical simulation shows that the gain peak wavelength is near 800 nm at room temperature for GaAs well with width of 4 nm, GaAs0.87P0.13 well with width of 13 nm and In0.14Ga0.74Al0.12As well with width of 6 nm. Furthermore, the output characteristics of the three designed quantum-well VCSELs are studied and compared. The results indicate that In0.14Ga0.74Al0.12As is the most appropriate candidate for the quantum well of 808-nm VCSELs.

  19. Multibias and thermal behavior of microwave GaN and GaAs based HEMTs

    Science.gov (United States)

    Alim, Mohammad A.; Rezazadeh, Ali A.; Gaquiere, Christophe

    2016-12-01

    Multibias and thermal characterizations on 0.25 μm × (2 × 100) μm AlGaN/GaN/SiC HEMT and 0.5 μm × (2 × 100) μm AlGaAs/InGaAs pseudomorphic HEMT have carried out for the first time. Two competitive device technologies are investigated with the variations of bias and temperature in order to afford a detailed realization of their potentialities. The main finding includes the self heating effect in the GaN device, zero temperature coefficient points at the drain current and transconductance in the GaAs device. The thermal resistance RTH of 7.1, 8.2 and 9.4 °C mm/W for the GaN device was estimated at 25, 75 and 150 °C respectively which are consistent with those found in the open literature. The temperature trend of the threshold voltage VT, Schottky barrier height ϕb, sheet charge densities of two dimensional electron gas ns, and capacitance under the gate Cg are exactly opposite in the two devices; whereas the knee voltage Vk, on resistance Ron, and series resistance Rseries are shows similar trend. The multi-bias and thermal behavior of the output current Ids, output conductance gds, transconductance gm, cut-off frequency ft, maximum frequency fmax, effective velocity of electron, veff and field dependent mobility, μ demonstrates a great potential of GaN device. These results provide some valuable insights for technology of preference for future and current applications.

  20. Effect of dopant density on contact potential difference across n-type GaAs homojunctions using Kelvin Probe Force Microscopy

    Science.gov (United States)

    Boumenou, C. Kameni; Urgessa, Z. N.; Djiokap, S. R. Tankio; Botha, J. R.; Nel, J.

    2018-04-01

    In this study, cross-sectional surface potential imaging of n+/semi-insulating GaAs junctions is investigated by using amplitude mode kelvin probe force microscopy. The measurements have shown two different potential profiles, related to the difference in surface potential between the semi-insulating (SI) substrate and the epilayers. It is shown that the contact potential difference (CPD) between the tip and the sample is higher on the semi-insulating substrate side than on the n-type epilayer side. This change in CPD across the interface has been explained by means of energy band diagrams indicating the relative Fermi level positions. In addition, it has also been found that the CPD values across the interface are much smaller than the calculated values (on average about 25% of the theoretical values) and increase with the electron density. Therefore, the results presented in study are only in qualitative agreement with the theory.

  1. Substrate temperature dependence of ZnTe epilayers grown on GaAs(0 0 1) by molecular beam epitaxy

    Science.gov (United States)

    Zhao, Jie; Zeng, Yiping; Liu, Chao; Li, Yanbo

    2010-04-01

    ZnTe thin films have been grown on GaAs(0 0 1) substrates at different temperatures with constant Zn and Te beam equivalent pressures (BEPs) by molecular beam epitaxy (MBE). In situ reflection high-energy electron diffraction (RHEED) observation indicates that two-dimensional (2D) growth mode can be established after around one-minute three-dimensional (3D) nucleation by increasing the substrate temperature to 340 °C. We found that Zn desorption from the ZnTe surface is much greater than that of Te at higher temperatures, and estimated the Zn sticking coefficient by the evolution of growth rate. The Zn sticking coefficient decreases from 0.93 to 0.58 as the temperature is elevated from 320 to 400 °C. The ZnTe epilayer grown at 360 °C displays the narrowest full-width at half-maximum (FWHM) of 660 arcsec from (0 0 4) reflection in double-crystal X-ray rocking curve (DCXRC) measurements. The surface morphology of ZnTe epilayers is strongly dependent on the substrate temperature, and the root-mean-square (RMS) roughness diminishes drastically with the increase in temperature.

  2. Structural and morphological characterizations of ZnO films grown on GaAs substrates by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Agouram, S.; Zuniga Perez, J.; Munoz-Sanjose, V. [Universitat de Valencia, Departamento de Fisica Aplicada y Electromagnetismo, Burjassot (Spain)

    2007-07-15

    ZnO films were grown on GaAs(100), GaAs(111)A and GaAs(111)B substrates by metal organic chemical vapour deposition (MOCVD). Diethylzinc (DEZn) and tertiarybutanol (t-butanol) were used as Zn and O precursors, respectively. The influence of the growth temperature and GaAs substrate orientation on the crystalline orientation and morphology of the ZnO grown films has been analysed. Crystallinity of grown films was studied by X-ray diffraction (XRD); thickness and morphology of ZnO films were investigated by scanning electron microscopy (SEM). SEM results reveal significant differences between morphologies depending on growth temperature but not significant differences were detected on the texture of grown films. (orig.)

  3. High Pressure Spectroscopic Studies of AlGaAs, GaAs, and II-VI Semiconductors and Heterostructures

    National Research Council Canada - National Science Library

    Chandrasekhar, Meera

    1997-01-01

    We have conducted four studies on three different but related materials. The first is a temperature study of a pseudomorphic epilayer of ZnSe on GaAs, where we measured the temperature dependence of the interlayer biaxial strain...

  4. Secondary ion yield changes in Si and GaAs due to topography changes during O+2 or Cs+ ion bombardment

    International Nuclear Information System (INIS)

    Stevie, F.A.; Kahora, P.M.; Simons, D.S.; Chi, P.

    1988-01-01

    Changes in secondary ion yields of matrix and dopant species have been correlated with changes in surface topography during O + 2 bombardment of Si and GaAs. In Si, profiles were measured in (100) wafers at 6- and 8-keV impact energy. At 6 keV, a yield increase of about 70% occurred for Si + over a depth range of 2.5 to 3.5 μm, with changes in other species ranging from a decrease of ∼20% for Si + 3 to an increase of more than 25% for O + . The development of a rippled surface topography was observed in scanning electron micrographs over the same depth range. Similar effects occurred over a 3--5 μm depth range for 8-keV ions, and in (111) silicon at a depth of 3 to 4 μm for 6-keV ions. No differences were noted between p- and n-type silicon, or implanted and unimplanted silicon. In GaAs, profiles were measured in (100) wafers at 2.5-, 5.5-, and 8-keV impact energies. At 8 keV, a yield increase of about 70% was found for GaO + in the range 0.6--1.0 μm, with smaller changes for other matrix species. At 5.5 keV, similar effects were observed, but over a depth interval of 0.3 to 0.7 μm. No yield changes were detected at 2.5-keV impact energy. The yield changes at the higher energies were again correlated with the onset of changes in topography. No change in ion yield or surface topography was noted for Cs + bombardment of Si or GaAs. The topography and ion yield changes are affected by the angle of incidence and, for Si, the oxygen coverage. The results show that the practice of normalizing secondary ion mass spectrometry dopant profiles to a matrix signal must be modified for situations where matrix yield changes occur

  5. Doped Aluminum Gallium Arsenide (AlGaAs)/Gallium Arsenide (GaAs) Photoconductive Semiconductor Switch (PCSS) Fabrication

    Science.gov (United States)

    2016-09-27

    ARL-TR-7819 ● SEP 2016 US Army Research Laboratory Doped Aluminum Gallium Arsenide (AlGaAs)/Gallium Arsenide (GaAs...Laboratory Doped Aluminum Gallium Arsenide (AlGaAs)/Gallium Arsenide (GaAs) Photoconductive Semiconductor Switch (PCSS) Fabrication by...Report 3. DATES COVERED (From - To) January 2016–September 2016 4. TITLE AND SUBTITLE Doped Aluminum Gallium Arsenide (AlGaAs)/Gallium Arsenide (GaAs

  6. Above 8GHz Static T-Flip-Flop Operation using FT=22.9GHz GaAs MESFETs

    DEFF Research Database (Denmark)

    Riishøj, J; Danielsen, Per Lander

    1992-01-01

    A static SCFL Toggle Flip-Flop GaAs IC having maximum operating frequency of Fdiv=8.25GHz has been designed using a commercially available GaAs MESFET foundry service. The average Ft for the present wafer is Ft=22.9GHz giving a very high Fdiv/Ft-ratio of Fdiv/Ft=0.36. In addition output voltage...

  7. Evidence of type-II band alignment at the ordered GaInNP to GaAs heterointerface

    International Nuclear Information System (INIS)

    Hsu, H.P.; Huang, Y.N.; Huang, Y.S.; Sitarek, P.; Tiong, K.K.; Tu, C.W.

    2009-01-01

    Polarized piezoreflectance (PzR) and photoreflectance (PR) are employed to study band alignment in Ga 0.46 In 0.54 N y P 1-y /GaAs heterostructures grown by gas-source molecular-beam epitaxy. The features near the band edge of Ga 0.46 In 0.54 N y P 1-y show strong polarization dependence, indicating the existence of some degree of ordering of these samples. The PR spectra exhibit Franz-Keldysh Oscillations (FKOs) above the band edge of GaAs. The electric fields in the GaAs region are evaluated by analyzing the FKOs and found to decrease with increasing nitrogen content. The type-II band alignment at the Ga 0.46 In 0.54 N y P 1-y /GaAs interface is concluded for the alloys with nitrogen content y larger than 0.5% based on the appearance of additional features below band edge of GaAs. These features are attributed to the spatially indirect type-II transitions in the vicinity of interface region between Ga 0.46 In 0.54 N y P 1-y and GaAs. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Possibility of a quasi-liquid layer of As on GaAs substrate grown by MBE as observed by enhancement of Ga desorption at high As pressure

    Science.gov (United States)

    Asai, K.; Feng, J. M.; Vaccaro, P. O.; Fujita, K.; Ohachi, T.

    2000-06-01

    The As vapor pressure dependence of the Ga desorption rate during molecular beam epitaxy (MBE) growth on GaAs( n11)A ( n=1-4 hereafter) substrates was studied by photoluminescence (PL) measurements at 12 K for undoped AlGaAs/GaAs asymmetric double quantum wells (ADQWs). Reflection high energy electron diffraction (RHEED) oscillation measurements on a GaAs(100) surface were also used. Two K-cells of As solid sources (corresponding to beam equivalent pressures (BEPs) of 9.0×10 -6 and 4.5×10 -5 Torr) were used to change the As pressure rapidly. The Ga flux and substrate temperature were kept constant at 0.76 ML/s and 12 K, respectively, while the As flux changed from 7.6 (BEP 9.0×10 -6 Torr) to 32 ML/s (4.5×10 -5 Torr). With increasing As pressure, two separated PL peaks for the wide well (WW) of high index substrates were observed. This peak separation is attributed to a reduced well depth from an increasing Ga desorption rate. The energy differences of the PL peak depending on the off-angle from (111)A to (100) plane indicates an orientation-dependent Ga desorption rate. Moreover, amongst all ( n11)A and (100) planes, the Ga desorption rate was smallest from the (111)A surface. The increase of Ga desorption from the surface at high As pressures probably arose from an increasing coverage with a quasi-liquid layer (QLL).

  9. Growth and Functionality of Cells Cultured on Conducting and Semi-Conducting Surfaces Modified with Self-Assembled Monolayers (SAMs

    Directory of Open Access Journals (Sweden)

    Rajendra K. Aithal

    2016-02-01

    Full Text Available Bioengineering of dermal and epidermal cells on surface modified substrates is an active area of research. The cytotoxicity, maintenance of cell phenotype and long-term functionality of human dermal fibroblast (HDF cells on conducting indium tin oxide (ITO and semi-conducting, silicon (Si and gallium arsenide (GaAs, surfaces modified with self-assembled monolayers (SAMs containing amino (–NH2 and methyl (–CH3 end groups have been investigated. Contact angle measurements and infrared spectroscopic studies show that the monolayers are conformal and preserve their functional end groups. Morphological analyses indicate that HDFs grow well on all substrates except GaAs, exhibiting their normal spindle-shaped morphology and exhibit no visible signs of stress or cytoplasmic vacuolation. Cell viability analyses indicate little cell death after one week in culture on all substrates except GaAs, where cells died within 6 h. Cells on all surfaces proliferate except on GaAs and GaAs-ODT. Cell growth is observed to be greater on SAM modified ITO and Si-substrates. Preservation of cellular phenotype assessed through type I collagen immunostaining and positive staining of HDF cells were observed on all modified surfaces except that on GaAs. These results suggest that conducting and semi-conducting SAM-modified surfaces support HDF growth and functionality and represent a promising area of bioengineering research.

  10. Charge collection efficiency of GaAs detectors studied with low-energy heavy charged particles

    International Nuclear Information System (INIS)

    Bates, R.; Dolezal, Z.; Linhart, V.; O'Shea, V.; Pospisil, S.; Raine, C.; Smith, K.; Sinor, M.; Wilhelm, I.

    1999-01-01

    Epitaxially grown GaAs layers have recently been produced with sufficient thickness and low enough free carrier concentration to permit their use as radiation detectors. Initial tests have shown that the epi-material behaves as a classical semiconductor as the depletion behaviour follows the square root dependency on the applied bias. This article presents the results of measurements of the growth of the active depletion depth with increasing bias using low-energy protons and alpha particles as probes for various depths and their comparison to values extrapolated from capacitance measurements. From the proton and alpha particle spectroscopic measurements, an active depth of detector material that collects 100% of the charge generated inside it was determined. The consistency of these results with independent capacitance measurements supports the idea that the GaAs epi-material behaves as a classical semiconductor. (author)

  11. The Morphology and Microstructure of Thin-Film GaAs on Mo Substrates

    International Nuclear Information System (INIS)

    Jones, K. M.; Al-Jassim, M. M.; Hasoon, F. S.; Venkatasubramanian, R.

    1999-01-01

    The growth of GaAs thin films on Molybdenum foils was investigated in an attempt to find a low-cost substrate for GaAs. The films were grown by metalorganic chemical vapor deposition (MOCVD). The film thickness was in the 2-4(micro)m range, while the deposition temperature was in the 650-825 C range. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to investigate the film morphology and microstructure, respectively. The film morphology in general, and the grain size in particular, were found to be strongly dependent on the growth temperature. However, the defect structure observed in these films was relatively insensitive to the growth conditions

  12. Weak interaction between germanene and GaAs(0001) by H intercalation: A route to exfoliation

    KAUST Repository

    Kaloni, Thaneshwor P.

    2013-11-13

    Epitaxial germanene on a semiconducting GaAs(0001) substrate is studied by ab initio calculations. The germanene-substrate interaction is found to be strong for direct contact but can be substantially reduced by H intercalation at the interface. Our results indicate that it is energetically possible to take the germanene off the GaAs(0001) substrate. While mounted on the substrate, the electronic structure shows a distinct Dirac cone shift above the Fermi energy with a splitting of 175 meV. On the other hand, we find for a free standing sheet a band gap of 24 meV, which is due to the intrinsic spin orbit coupling.

  13. Temperature dependence of the Rashba and Dresselhaus spin–orbit interactions in GaAs wells

    International Nuclear Information System (INIS)

    Wang, W.; Fu, J.Y.

    2016-01-01

    We have recently shown [Fu and Egues, Phys. Rev. B 91 (2015) 075408] unusual properties of the spin–orbit (SO) interaction in relatively wide quantum wells, e.g., the second subband Rashba term can vanish even in asymmetric configurations. Here we report our theoretical investigation on the temperature dependence of Rashba and Dresselhaus SO interactions in GaAs both relatively narrow and wide wells, having the electron occupancy of one and two subbands, respectively. We consider all relevant intra- and intersubband SO terms. We find that the variation of intrasubband couplings as temperatures range from 0.3 to 300 K could attain, ∼meV Å, the order of usual magnitudes for SO terms in GaAs wells. Moreover, we observe distinct behaviors of the SO interaction of the two subbands, as functions of temperature. On the other band, we find that the intersubband SO terms have a relatively weak temperature dependence.

  14. Temperature dependence of the Rashba and Dresselhaus spin–orbit interactions in GaAs wells

    Energy Technology Data Exchange (ETDEWEB)

    Wang, W. [Department of Physics, Jining University, 273155 Qufu, Shandong (China); Fu, J.Y., E-mail: jiyongfu78@gmail.com [Department of Physics, Qufu Normal University, 273165 Qufu, Shandong (China); Instituto de Física de São Carlos, Universidade de São Paulo, 13560-970 São Carlos, SP (Brazil); Departamento de Física, Universidade Federal de São Carlos, 13565-905 São Carlos, SP (Brazil)

    2016-02-01

    We have recently shown [Fu and Egues, Phys. Rev. B 91 (2015) 075408] unusual properties of the spin–orbit (SO) interaction in relatively wide quantum wells, e.g., the second subband Rashba term can vanish even in asymmetric configurations. Here we report our theoretical investigation on the temperature dependence of Rashba and Dresselhaus SO interactions in GaAs both relatively narrow and wide wells, having the electron occupancy of one and two subbands, respectively. We consider all relevant intra- and intersubband SO terms. We find that the variation of intrasubband couplings as temperatures range from 0.3 to 300 K could attain, ∼meV Å, the order of usual magnitudes for SO terms in GaAs wells. Moreover, we observe distinct behaviors of the SO interaction of the two subbands, as functions of temperature. On the other band, we find that the intersubband SO terms have a relatively weak temperature dependence.

  15. Effect of band gap narrowing on GaAs tunnel diode I-V characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Lebib, A.; Hannanchi, R. [Laboratoire d' énergie et de matériaux, LabEM-LR11ES34-Université de sousse (Tunisia); Beji, L., E-mail: lotbej_fr@yahoo.fr [Laboratoire d' énergie et de matériaux, LabEM-LR11ES34-Université de sousse (Tunisia); EL Jani, B. [Unité de Recherche sur les Hétéro-Epitaxies et Applications, Faculté des Sciences, Université de Monastir, 5019 Monastir (Tunisia)

    2016-12-01

    We report on experimental and theoretical study of current-voltage characteristics of C/Si-doped GaAs tunnel diode. For the investigation of the experimental data, we take into account the band-gap narrowing (BGN) effect due to heavily-doped sides of the tunnel diode. The BGN of the n- and p-sides of tunnel diode was measured by photoluminescence spectroscopy. The comparison between theoretical results and experimental data reveals that BGN effect enhances tunneling currents and hence should be considered to identify more accurately the different transport mechanisms in the junction. For C/Si-doped GaAs tunnel diode, we found that direct tunneling is the dominant transport mechanism at low voltages. At higher voltages, this mechanism is replaced by the rate-controlling tunneling via gap states in the forbidden gap.

  16. Optical anisotropy induced by mechanical strain around the fundamental gap of GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Ortega-Gallegos, J.; Lastras-Martinez, A.; Lastras-Martinez, L.F. [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, San Luis Potosi (Mexico); Balderas-Navarro, R.E. [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, San Luis Potosi (Mexico); Facultad de Ciencias, Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, San Luis Potosi (Mexico)

    2008-07-01

    We report on a theoretical-experimental study of reflectance anisotropy spectroscopy (RAS) of GaAs (001) crystals under uniaxial stress. The study was carried out in the energy region around the fundamental transition. RAS spectra in the energy range from 1.2-1.7 eV were measured with a photoelastic-modulator-based spectrometer. To induce an optical anisotropy, the GaAs crystals were thinned down to 400 {mu}m and an calibrated uniaxial stress was applied by deflection. RAS showed a line shape consisting of an oscillation at around E{sub 0}. On the basis of a perturbative approach employing the Pikus-Bir Hamiltonian, we calculated the RAS line shape and found a close agreement with the experimental spectra. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Spectral dependence of the refractive index of single-crystalline GaAs for optical applications

    International Nuclear Information System (INIS)

    Plotnichenko, V G; Nazaryants, V O; Kryukova, E B; Dianov, E M

    2010-01-01

    The refractive index of crystalline GaAs is measured by the method of interference refractometry in the wavenumber range from 10 500 to 540 cm -1 (or the wavelength range from 0.9 to 18.6 μm) with a resolution of 0.1 cm -1 . The measurement results are approximated by the generalized Cauchy dispersion formula of the 8th power. Spectral wavelength dependences of the first- and second-order derivatives of the refractive index are calculated, and the zero material dispersion wavelength is found to be λ 0 = 6.61 μm. Using three GaAs plates of different thicknesses we managed to raise the refractive index measurement accuracy up to 4 x 10 -4 or 0.02%, being nearly by an order of magnitude better than the data available.

  18. Spectral dependence of the refractive index of single-crystalline GaAs for optical applications

    Energy Technology Data Exchange (ETDEWEB)

    Plotnichenko, V G; Nazaryants, V O; Kryukova, E B; Dianov, E M, E-mail: victor@fo.gpi.ac.r [Fibre Optics Research Center of the Russian Academy of Sciences, 38 Vavilov Street, Moscow 119333 (Russian Federation)

    2010-03-17

    The refractive index of crystalline GaAs is measured by the method of interference refractometry in the wavenumber range from 10 500 to 540 cm{sup -1} (or the wavelength range from 0.9 to 18.6 {mu}m) with a resolution of 0.1 cm{sup -1}. The measurement results are approximated by the generalized Cauchy dispersion formula of the 8th power. Spectral wavelength dependences of the first- and second-order derivatives of the refractive index are calculated, and the zero material dispersion wavelength is found to be {lambda}{sub 0} = 6.61 {mu}m. Using three GaAs plates of different thicknesses we managed to raise the refractive index measurement accuracy up to 4 x 10{sup -4} or 0.02%, being nearly by an order of magnitude better than the data available.

  19. Formation of columnar (In,Ga)As quantum dots on GaAs(100)

    International Nuclear Information System (INIS)

    He, J.; Noetzel, R.; Offermans, P.; Koenraad, P.M.; Gong, Q.; Hamhuis, G.J.; Eijkemans, T.J.; Wolter, J.H.

    2004-01-01

    Columnar (In,Ga)As quantum dots (QDs) with homogeneous composition and shape in the growth direction are realized by molecular-beam epitaxy on GaAs(100) substrates. The columnar (In,Ga)As QDs are formed on InAs seed QDs by alternating deposition of thin GaAs intermediate layers and monolayers of InAs with extended growth interruptions after each layer. The height of the columnar (In,Ga)As QDs is controlled by varying the number of stacked GaAs/InAs layers. The structural and optical properties are studied by cross-sectional scanning tunneling microscopy, atomic force microscopy, and photoluminescence spectroscopy. With increase of the aspect ratio of the columnar QDs, the emission wavelength is redshifted and the linewidth is reduced

  20. Early {sup 8}Li{sup +}{beta}-NMR investigations in GaAs and Ge

    Energy Technology Data Exchange (ETDEWEB)

    Chow, K.H. [Department of Physics, University of Alberta, Edmonton, AB, T6G 2J1 (Canada)]. E-mail: kimchow@phys.ualberta.ca; Salman, Z. [TRIUMF, 4004 Wesbrook Mall, Vancouver, V6T 2A3 (Canada); MacFarlane, W.A. [Department of Chemistry, University of British Columbia, Vancouver, V6T 1Z1 (Canada); Campbell, Brendan [Department of Physics, University of Alberta, Edmonton, AB, T6G 2J1 (Canada); Keeler, T.A. [Department of Physics and Astronomy, University of British Columbia, Vancouver, BC, V6T 1Z1 (Canada); Kiefl, R.F. [Department of Physics and Astronomy, University of British Columbia, Vancouver, BC, V6T 1Z1 (Canada); Kreitzman, S.R. [TRIUMF, 4004 Wesbrook Mall, Vancouver, V6T 2A3 (Canada); Levy, C.D.P. [TRIUMF, 4004 Wesbrook Mall, Vancouver, V6T 2A3 (Canada); Morris, G.D. [TRIUMF, 4004 Wesbrook Mall, Vancouver, V6T 2A3 (Canada); Parolin, T.J. [Department of Chemistry, University of British Columbia, Vancouver, V6T 1Z1 (Canada); Daviel, S. [TRIUMF, 4004 Wesbrook Mall, Vancouver, V6T 2A3 (Canada); Yamani, Z. [National Research Council, Steacie Institute for Molecular Sciences, Neutron Program for Materials Research, Chalk River Laboratories, Chalk River, ON, K0J 1J0 (Canada)

    2006-03-31

    In this paper, we describe initial studies of the structure and dynamics associated with Li+8 in bulk crystalline GaAs and Ge. At low temperatures in GaAs, the amplitude of the Li+8 resonance signal at {approx}3T indicates that a large fraction (at least 70%) of the Li end up in locations with cubic symmetry (i.e. the tetrahedral interstitial and substitutional sites). The linewidth of the {beta}-NMR Li+8 resonance increases dramatically above 150K, reaches a maximum at about 290K, and decreases again. This suggests that the Li starts to change its location, probably from an interstitial to a substitutional site, at {approx}150K. Experiments in Ge are also described. In this sample, a narrow resonance is seen at low temperatures that is likely due to Li located at an interstitial site. Near room temperature, it appears that Li is converting to another site.

  1. Diffusion of $^{56}$Co in GaAs and SiGe alloys

    CERN Multimedia

    Koskelo, O K

    2007-01-01

    Following our previous diffusion studies performed with the modified radiotracer technique, we propose to determine the diffusion of cobalt in GaAs and SiGe alloys under intrinsic conditions. In the literature only three previous studies for Co diffusion in GaAs may be found and the results differ by over four orders of magnitude from each other. For Co diffusion in SiGe alloys no previous data is available in the literature. For Co diffusion in Ge one study may be found but the results have been obtained with material having increased dislocation density. For dislocation-free material no previous measurements are available. For such experiments we ask for two runs of 3 shifts (total of 6 shifts) with $^{56}$Co$^{+}$ ion beam.

  2. Experimental and theoretical investigations on the phase purity of GaAs zincblende nanowires

    Science.gov (United States)

    Ren, X.; Huang, H.; Dubrovskii, V. G.; Sibirev, N. V.; Nazarenko, M. V.; Bolshakov, A. D.; Ye, X.; Wang, Q.; Huang, Y.; Zhang, X.; Guo, J.; Liu, X.

    2011-01-01

    Interesting phenomena of GaAs nanowire growth have been observed. The nanowires were grown by metal-organic chemical vapor deposition (MOCVD) on GaAs (1 1 1)B substrates with an Au catalyst at 464 °C. The growth rates of all nanowires were almost the same for a fixed density of Au nanodrops. TEM analysis demonstrates a stacking-fault-free zincblende structure of the nanowires even when their radius is reduced to as small as 12 nm. A theoretical model is developed that is capable of describing the critical radius of zincblende to wurtzite phase transition as a function of vapor supersaturation and material constants. The model shows that the surprising prevalence of the zincblende structure should originate from very high supersaturations during MOCVD.

  3. Experimental and theoretical investigations on the phase purity of GaAs zincblende nanowires

    International Nuclear Information System (INIS)

    Ren, X; Huang, H; Ye, X; Wang, Q; Huang, Y; Zhang, X; Guo, J; Liu, X; Dubrovskii, V G; Sibirev, N V; Nazarenko, M V; Bolshakov, A D

    2011-01-01

    Interesting phenomena of GaAs nanowire growth have been observed. The nanowires were grown by metal-organic chemical vapor deposition (MOCVD) on GaAs (1 1 1)B substrates with an Au catalyst at 464 °C. The growth rates of all nanowires were almost the same for a fixed density of Au nanodrops. TEM analysis demonstrates a stacking-fault-free zincblende structure of the nanowires even when their radius is reduced to as small as 12 nm. A theoretical model is developed that is capable of describing the critical radius of zincblende to wurtzite phase transition as a function of vapor supersaturation and material constants. The model shows that the surprising prevalence of the zincblende structure should originate from very high supersaturations during MOCVD

  4. Anisotropy of mosaic structure of GaAsP layers grown on GaAs substrates

    Energy Technology Data Exchange (ETDEWEB)

    Saka, T. [Daido Institute of Technology, 10-3, Takiharu-cho, Minami-ku, Nagoya 457-8530 (Japan); Kato, T. [Daido Steel Co. Ltd., 2-30, Daido-cho, Minami-ku, Nagoya 457-8545 (Japan); Jin, X.G.; Tanioku, M.; Ujihara, T.; Takeda, Y. [Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Yamamoto, N.; Nakagawa, Y.; Mano, A.; Okumi, S.; Yamamoto, M.; Nakanishi, T. [Graduate School of Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602 (Japan); Horinaka, H.; Matsuyama, T. [Faculty of Engineering, Osaka Prefecture University, 1-1, Gakuen-cho, Sakai 599-8531 (Japan); Yasue, T.; Koshikawa, T. [Fundamental Electronics Research Institute, Osaka Electro-Communication University, 18-8, Hatsu-cho, Neyagawa 572-8530 (Japan)

    2009-08-15

    The crystalline structure of GaAsP layers grown on GaAs and GaP(001) substrates, used for spin polarized photocathodes, has been investigated by X-ray diffraction. The layers on the GaAs substrate possess a mosaic structure observable by X-ray topography and consist of many large blocks. The mosaicity is anisotropic and the distribution of the mosaic is restricted within the (110) plane, and the blocks zigzag around the [110] direction. The layer grown on the GaP substrate was uniform and no mosaic was observed in the topographs. The results indicate that different mechanisms of strain release occur in GaAsP layers for tensile and compressive strains. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

  5. Deep Level Defects In Ion Implanted Laser Annealed Bulk GaAs

    Science.gov (United States)

    Dlodlo, Mqhele E.; Rys, Andrzej; Ahmed, Akhter U.; Edgar, James H.

    1990-02-01

    In this paper, we report on the carrier activation and deep level crystal defects in pulsed excimer laser (A = 308 nm) anealed samples of GaAs implanted with Si and Se to a dose ranging from 2.2 x 1012 to 6.0 x 10" cm'. The residual defects in the pulsed-laser annealed GaAs have been investigated by means of photo-induced current transient spectroscopy (PITS). The electron concentration and carrier mobility were studied by Hall effect and Van der Pauw measurements. Although the implanted layer recrystallization was good and the sheet carrier concentration was high, the electron mobility was low. The correlation between deep traps, the carrier concentration, the electron mobility, and laser light intensity is presented.

  6. Relaxation dynamics and residual strain in metamorphic AlSb on GaAs

    International Nuclear Information System (INIS)

    Ripalda, J. M.; Rivera, A.; Alen, B.; Gonzalez, Y.; Gonzalez, L.; Briones, F.; Sanchez, A. M.; Taboada, A. G.; Rotter, T. J.; Balakrishnan, G.

    2012-01-01

    We have observed the evolution of the accumulated stress during heteroepitaxial growth of highly lattice mismatched AlSb on GaAs by measuring the deformation of the substrate as a function of time. High resolution transmission electron microscopy images show almost all of the plastic relaxation is accommodated by an array of 90 deg. misfit dislocations at the interface. The in-plane lattice parameter of the resulting metamorphic AlSb is slightly smaller (0.3%) than the bulk value and perfectly matches the lattice parameter of bulk GaSb. It is, therefore, possible to grow nearly stress-free GaSb on GaAs using a metamorphic AlSb buffer layer.

  7. Relaxation dynamics and residual strain in metamorphic AlSb on GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Ripalda, J. M.; Rivera, A.; Alen, B.; Gonzalez, Y.; Gonzalez, L.; Briones, F. [IMM-Instituto de Microelectronica de Madrid (CNM-CSIC), Isaac Newton 8, PTM, E-28760 Tres Cantos, Madrid (Spain); Sanchez, A. M. [Physics Department, University of Warwick, Coventry CV4 7AL (United Kingdom); Taboada, A. G. [Laboratory for Solid State Physics, ETH Zurich, Schafmattstr. 16, CH-8093 Zurich (Switzerland); Rotter, T. J.; Balakrishnan, G. [Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106 (United States)

    2012-01-02

    We have observed the evolution of the accumulated stress during heteroepitaxial growth of highly lattice mismatched AlSb on GaAs by measuring the deformation of the substrate as a function of time. High resolution transmission electron microscopy images show almost all of the plastic relaxation is accommodated by an array of 90 deg. misfit dislocations at the interface. The in-plane lattice parameter of the resulting metamorphic AlSb is slightly smaller (0.3%) than the bulk value and perfectly matches the lattice parameter of bulk GaSb. It is, therefore, possible to grow nearly stress-free GaSb on GaAs using a metamorphic AlSb buffer layer.

  8. Formation and stability of As-H bonds in H-implanted GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Stein, H.J.

    1990-01-01

    The chemical bonding and isochronal annealing of H implanted into GaAs at 80 K has been investigated by infrared absorption measurements. Based upon the frequency shift when deuterium is substituted for H, and an equivalent band formation in InAs, assignment of a new band at 2029 cm{sup {minus}1} is made to As-H centers. Bonding of H at interstitial As of and As-vacancy pair which anneals between 150 and 250K is suggested as the structure for the defect. A previously-reported absorption band at 1834 cm{sup {minus}1} assigned to Ga-H centers in H-implanted GaAS increase in intensity when H is released from As-H centers. 15 refs., 5 figs.

  9. GaAs Solar Cells on V-Grooved Silicon via Selective Area Growth: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Warren, Emily L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Jain, Nikhil [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Tamboli, Adele C [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Vaisman, Michelle [Yale University; Li, Qiang [Hong Kong University of Science and Technology; Lau, Kei May [Hong Kong University of Science and Technology

    2017-08-31

    Interest in integrating III-Vs onto Si has recently resurged as a promising pathway towards high-efficiency, low-cost tandem photovoltaics. Here, we present a single junction GaAs solar cell grown monolithically on polished Si (001) substrates using V-grooves, selective area growth, and aspect ratio trapping to mitigate defect formation without the use of expensive, thick graded buffers. The GaAs is free of antiphase domains and maintains a relatively low TDD of 4x107 cm-2, despite the lack of a graded buffer. This 6.25 percent-efficient demonstration solar cell shows promise for further improvements to III-V/Si tandems to enable cost-competitive photovoltaics.

  10. High fluence proton irradiation of GaAs detectors at room temperature and at -8 C

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, W.J.; Albertz, D.; Braunschweig, W.; Chu, Z.; Karpinski, W.; Krais, R.; Kubicki, T.; Luebelsmeyer, K.; Rente, C.; Syben, O.; Tenbusch, F.; Toporowski, M. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.

    1998-02-01

    Semi-insulating GaAs detectors processed in Aachen using Freiberger compound material with low carbon content (FCM-LC) have been irradiated with protons (23 GeV) at eleven different fluences up to 6.3 x 10{sup 14} p/cm{sup 2} at room temperature. The detectors have been characterized in terms of macroscopic quantities like I-V characteristic curves and the signal response for incident minimum ionizing particles before and after irradiation. At the temperature of -8 C three other GaAs detectors have been irradiated with protons at fluences of about 6 x 10{sup 13} p/cm{sup 2}. After the irradiation they are warmed up at room temperature. The behaviour of the detectors before and after the warming up period has been studied. (orig.). 8 refs.

  11. Optical and electrical properties of disordered layers in GaAs crystals produced by Si+ ion implantation

    International Nuclear Information System (INIS)

    Shigetomi, S.; Matsumori, T.

    1981-01-01

    The ion dose dependence and the annealing behavior of GaAs after implantation with 200 keV 2 x 10 12 -2 x 10 16 Si + ions/cm 2 as studied by using optical absorption, reflection, photoluminescence, sheet-resistivity, Hall effect and field effect methods. The experimental results of the optical absorption and reflection indicate that, when annealed at about 400 0 C, the disordered layers produced by high-dose implantation (2 x 10 15 -2 x 10 16 ions/cm 2 ), reorder epitaxially on the underlying crystal leaving relatively little residual disorder in the near-surface. However, from the experimental results of optical reflection, 800 0 C annealing is required for perfect recrystallization. The temperature dependence of the sheet-resistivity, with annealing temperature as a parameter, indicates that, next to the variable-range hopping and phonon-assisted hopping regions, a new region is observed. Holes, thermally-activated from localized states near the Fermi level Esub(F) to the mobility edge Esub(V) near the valence band, are responsible for electrical conduction in this region. (orig.)

  12. Monolithically interconnected GaAs solar cells: A new interconnection technology for high voltage solar cell output

    Science.gov (United States)

    Dinetta, L. C.; Hannon, M. H.

    1995-10-01

    Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products. Dual

  13. Monolithically interconnected GaAs solar cells: A new interconnection technology for high voltage solar cell output

    Science.gov (United States)

    Dinetta, L. C.; Hannon, M. H.

    1995-01-01

    Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products. Dual

  14. Radiation damage study of GaAs detectors irradiated by fast neutrons

    Czech Academy of Sciences Publication Activity Database

    Linhart, V.; Bém, Pavel; Götz, Miloslav; Honusek, Milan; Mareš, Jiří J.; Slavíček, T.; Sopko, B.; Šimečková, Eva

    2006-01-01

    Roč. 563, č. 1 (2006), s. 66-69 ISSN 0168-9002 R&D Projects: GA MPO(CZ) 1H-PK/07 Institutional research plan: CEZ:AV0Z10480505; CEZ:AV0Z10100521 Keywords : GaAs high-field mobility * radiation damage * solid-state detectors Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.185, year: 2006

  15. Stress variations due to microcracks in GaAs grown on Si

    Science.gov (United States)

    Yacobi, B. G.; Zemon, S.; Norris, P.; Jagannath, C.; Sheldon, P.

    1987-12-01

    Luminescence studies of thick (≥5 μm) GaAs epitaxial layers grown on Si substrates reveal regions of nonuniform stress associated with the presence of microcracks. Using cathodoluminescence spectroscopy as a tool for microcharacterization, the magnitude of the stress, derived from the peak positions of the luminescence spectra, is shown to increase gradually as a function of distance from the intersection of two microcracks. The greatest degree of stress relief was found at this intersection.

  16. Femtosecond differential transmission measurements on low temperature GaAs metal-semiconductor-metal structures

    DEFF Research Database (Denmark)

    Keil, Ulrich Dieter Felix; Hvam, Jørn Märcher; Tautz, S.

    1997-01-01

    We report on differential transmission measurements on low temperature grown (LT)-GaAs with and without applied electrical fields at different wavelengths. Electrical fields up to 100 kV/cm can be applied via an interdigitated contact structure to our LT GaAs samples which have been removed from....... The response time of a biased metal-semiconductor-metal detector, therefore, exceeds the carrier life time of the substrate material. (C) 1997 American Institute of Physics....

  17. Intermittency in low frequency current oscillations in semi-insulating GaAs

    CERN Document Server

    Samuilov, V; Cenys, A; Kyritsi, K G; Anagnostopoulos, A N; Bleris, G L

    2003-01-01

    Spontaneous low frequency current oscillations were observed in semi-insulating crystalline GaAs. If the value of the applied voltage U was increased, a crisis induced intermittency was observed. The time intervals between successive transitions were measured. For values of the control parameter U larger than a critical value two interacting chaotic subattractors were observed. The average time intervals are scaling with the control parameter with a critical exponent very close to -1/2.

  18. Perubahan Sel Imun Pulpitis Akibat Biomodulasi Laser GaA1As

    OpenAIRE

    Nugrohowati Nugrohowati

    2015-01-01

    The objective of this study was to disclose the effect of GaA1As laser biomodulation on pulpitis immune response. The use of laser is still disputable, because of the biomodulation effect of laser remains unclear, particularly on immune response of pulpitis. Laser is  astressor because it produces stress wave that may cause stress on pulp. Modulation of immune system occurred in each variable of immune system component was considred to be GAS (General Adaptation Syndrome). The applied design ...

  19. Dielectric constant of GaAs during a subpicosecond laser-induced phase transition

    Science.gov (United States)

    Siegal, Y.; Glezer, E. N.; Mazur, E.

    1994-06-01

    We measured the time evolution of the real and imaginary parts of the dielectric constant of GaAs following femtosecond laser pulse excitation. The data show a collapse of the average optical gap, or average bonding-antibonding energy-level separation. The rate of collapse increases with pump fluence. The decrease in the gap indicates that the pump beam induces a structural transformation from a covalent, tetrahedrally coordinated crystal to a phase with metallic cohesive properties.

  20. P-type Ge epitaxy on GaAs (100) substrate grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Y.J.; Chia, C.K.; Liu, H.F.; Wong, L.M.; Chai, J.W.; Chi, D.Z.; Wang, S.J., E-mail: sj-wang@imre.a-star.edu.sg

    2016-07-15

    Highlights: • The heterogeneous integration of p-Ge/GaAs by MOCVD indicates significance for the application in optoelectronic devices such as p-MOSFET, dual band photodetector, etc. • Many undesired pillar-structures were observed on the p-Ge epilayers and we found that the cause of the pillar-like structures was related to the Ge-Ga dimers formed during the growth. • We found that a GaAs substrate with fewer Ga or Ge danglings was helpful in suppressing the formation of the unwanted pillar-like structures and thus obtaining high quality p-Ge epilayers. - Abstract: In this work, Ga-doped Geranium (Ge) films have been grown on GaAs (100) substrates by metal-organic chemical vapor deposition (MOCVD). Undesired pillar structures have been observed on the epilayers prepared at relatively lower temperatures. Energy dispersive X-ray spectroscopy (EDX) indicated that the pillars are mainly consisted of Ga atoms, which is totally different from that of the Ge film. It was demonstrated that the pillar structures could be reduced by simply raising the growth temperature while keeping the other growth conditions unchanged. In this regard, the growth mechanism of the pillars was related to the Ge-Ga dimers formed during the growth of p-Ge films. By further studying the influence of a GaAs or Ge buffer layer on the growth of p-Ge layers, we found that the GaAs substrate with lower density of Ga or Ge dangling bonds was helpful in suppressing the formation of the undesired pillar structures.