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Sample records for fully depleted silicon-on-insulator

  1. A Novel Fully Depleted Air AlN Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor

    Institute of Scientific and Technical Information of China (English)

    YANG Yuan; GAO Yong; GONG Peng-Liang

    2008-01-01

    @@ A novel fully depleted air AlN silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistor (MOS-FET) is presented, which can eliminate the self-heating effect and solve the problem that the off-state current of SOI MOSFETs increases and the threshold voltage characteristics become worse when employing a high thermal conductivity material as a buried layer. The simulation results reveal that the lattice temperature in normal SOI devices is 75K higher than the atmosphere temperature, while the lattice temperature is just 4K higher than the atmosphere temperature resulting in less severe self-heating effect in air AlN SOI MOSFETs and AlN SOI MOSFETs. The on-state current of air AlN SOI MOSFETs is similar to the AlN SOI structure, and improves 12.3% more than that of normal SOI MOSFETs. The off-state current of AlN SOI is 6.7 times of normal SOI MOSFETs, while the counterpart of air AlN SOI MOSFETs is lower than that of SOI MOSFETs by two orders of magnitude. The threshold voltage change of air AlN SOI MOSFETs with different drain voltage is much less than that of AlN SOI devices, when the drain voltage is biased at 0.8 V, this difference is 28mV, so the threshold voltage change induced by employing high thermal conductivity material is cured.

  2. Material and device engineering in fully depleted silicon-on-insulator transistors to realize a steep subthreshold swing using negative capacitance

    Science.gov (United States)

    Ota, Hiroyuki; Migita, Shinji; Hattori, Junichi; Fukuda, Koichi; Toriumi, Akira

    2016-08-01

    This paper discusses material and device engineering in field-effect transistors (FETs) with HfO2-based ferroelectric gate insulators to attain a precipitous subthreshold swing (SS) by exploiting negative capacitance. Our physical analysis based on a new concept of a negative dielectric constant reveals that fully depleted silicon-on-insulator (FD-SOI) channels with a modest remnant polarization P r (3 µC/cm2 at most) are more suitable for realizing SS HfO2-based ferroelectric materials. We also confirm SS ferroelectric HfO2 gate insulators by device simulation.

  3. 0.5 µW Sub-Threshold Operational Transconductance Amplifiers Using 0.15 µm Fully Depleted Silicon-on-Insulator (FDSOI Process

    Directory of Open Access Journals (Sweden)

    Piotr Olejarz

    2012-05-01

    Full Text Available We present a low voltage, low power operational transconductance amplifier (OTA designed using a Fully Depleted Silicon-on-Insulator (FDSOI process. For very low voltage application down to 0.5 V, two-stage miller-compensated OTAs with both p-channel MOSFET (PMOS and n-channel MOSFET (NMOS differential input have been investigated in a FDSOI complementary metal oxide semiconductor (CMOS 150 nm process, using 0.5 V threshold transistors. Both differential input OTAs have been designed to operate from the standard 1.5 V down to 0.5 V with appropriate trade-offs in gain and bandwidth. The NMOS input OTA has a simulated gain/3 dB-bandwidth/power metric of 9.6 dB/39.6 KHz/0.48 µW at 0.6 V and 46.6 dB/45.01 KHz/10.8 µW at 1.5 V. The PMOS input OTA has a simulated metric of 19.7 dB/18.3 KHz/0.42 µW at 0.4 V and 53 dB/1.4 KHz/1.6 µW at 1.5 V with a bias current of 125 nA. The fabricated OTAs have been tested and verified with unity-gain configuration down to a 0.5 V supply voltage. Comparison with bulk process, namely the IBM 180 nm node is provided and with relevant discussion on the use of FDSOI process for low voltage analog design.

  4. Threshold voltage analytical model of fully depleted strained Si single Halo silicon-on-insulator metal-oxide semiconductor field effect transistor∗%单Halo全耗尽应变Si绝缘硅金属氧化物半导体场效应管的阈值电压解析模型*

    Institute of Scientific and Technical Information of China (English)

    辛艳辉†; 刘红侠; 范小娇; 卓青青

    2013-01-01

      为了改善金属氧化物半导体场效应管(MOSFET)的短沟道效应(SCE)、漏致势垒降低(DIBL)效应,提高电流的驱动能力,提出了单Halo全耗尽应变硅绝缘体(SOI) MOSFET结构,该结构结合了应变Si,峰值掺杂Halo结构, SOI三者的优点。通过求解二维泊松方程,建立了全耗尽器件表面势和阈值电压的解析模型。模型中分析了弛豫层中的Ge组分对表面势、表面场强和阈值电压的影响,不同漏电压对表面势的影响, Halo掺杂对阈值电压和DIBL的影响。结果表明,该新结构能够抑制SCE和DIBL效应,提高载流子的输运效率。%A single Halo fully depleted strain Si Silicon-On-insulator (SOI) structure, which has the advantages of strained Si, Halo doping, and SOI structure, is proposed to improve driving current, suppress the short channel effect (SCE) and drain induced barrier lowering (DIBL) effect. A two-dimensional analytical model for the surface potential, the surface electric field and the threshold voltage is proposed by solving Poisson’s equation. The effects of Ge fraction in the relaxed layer on surface potential and threshold voltage are investigated. In the paper we analyze the influence of drain voltage on surface potential. Finally the effects of Halo doping on threshold voltage and DIBL are investigated. The results show that the novel device can suppress the short channel effect and DIBL effect, and increase carrier transport speed.

  5. Vertical optical ring resonators fully integrated with nanophotonic waveguides on silicon-on-insulator substrates

    CERN Document Server

    Madani, Abbas; Stolarek, David; Zimmermann, Lars; Ma, Libo; Schmidt, Oliver G

    2015-01-01

    We demonstrate full integration of vertical optical ring resonators with silicon nanophotonic waveguides on silicon-on-insulator substrates to accomplish a significant step towards 3D photonic integration. The on-chip integration is realized by rolling up 2D differentially strained TiO2 nanomembranes into 3D microtube cavities on a nanophotonic microchip. The integration configuration allows for out of plane optical coupling between the in-plane nanowaveguides and the vertical microtube cavities as a compact and mechanically stable optical unit, which could enable refined vertical light transfer in 3D stacks of multiple photonic layers. In this vertical transmission scheme, resonant filtering of optical signals at telecommunication wavelengths is demonstrated based on subwavelength thick walled microcavities. Moreover, an array of microtube cavities is prepared and each microtube cavity is integrated with multiple waveguides which opens up interesting perspectives towards parallel and multi-routing through a ...

  6. An Analytical Avalanche Multiplication Model for Partially Depleted Silicon-on-Insulator SiGe Heterojunction Bipolar Transistors

    Institute of Scientific and Technical Information of China (English)

    XU Xiao-Bo; ZHANG He-Ming

    2011-01-01

    An analytical expression for avalanche multiplication of a novel vertical SiGe partially depleted heterojunction bipolar transistor (HBT) on a thin silicon-on-insulator (SOI) layer is obtained,considering vertical and horizontal impact ionization effects.The avalanche multiplication is found to be dependent on the collector width and doping concentration,and shows kinks with the increase of reverse base-collector bias,which is quite different from that of a conventional bulk HBT.The model is consistent with the experimental and simulation data and is found to be significant for the design and simulation of 0.13μm millimeter wave SiGe SOI BiCMOS technology.

  7. Growth of carbon nanotubes on fully processed silicon-on-insulator CMOS substrates.

    Science.gov (United States)

    Haque, M Samiul; Ali, S Zeeshan; Guha, P K; Oei, S P; Park, J; Maeng, S; Teo, K B K; Udrea, F; Milne, W I

    2008-11-01

    This paper describes the growth of Carbon Nanotubes (CNTs) both aligned and non-aligned on fully processed CMOS substrates containing high temperature tungsten metallization. While the growth method has been demonstrated in fabricating CNT gas sensitive layers for high temperatures SOI CMOS sensors, it can be employed in a variety of applications which require the use of CNTs or other nanomaterials with CMOS electronics. In our experiments we have grown CNTs both on SOI CMOS substrates and SOI CMOS microhotplates (suspended on membranes formed by post-CMOS deep RIE etching). The fully processed SOI substrates contain CMOS devices and circuits and additionally, some wafers contained high current LDMOSFETs and bipolar structures such as Lateral Insulated Gate Bipolar Transistors. All these devices were used as test structures to investigate the effect of additional post-CMOS processing such as CNT growth, membrane formation, high temperature annealing, etc. Electrical characterisation of the devices with CNTs were performed along with SEM and Raman spectroscopy. The CNTs were grown both at low and high temperatures, the former being compatible with Aluminium metallization while the latter being possible through the use of the high temperature CMOS metallization (Tungsten). In both cases we have found that there is no change in the electrical behaviour of the CMOS devices, circuits or the high current devices. A slight degradation of the thermal performance of the CMOS microhotplates was observed due to the extra heat dissipation path created by the CNT layers, but this is expected as CNTs exhibit a high thermal conductance. In addition we also observed that in the case of high temperature CNT growth a slight degradation in the manufacturing yield was observed. This is especially the case where large area membranes with a diameter in excess of 500 microns are used.

  8. Analytical base-collector depletion capacitance in vertical SiGe heterojunction bipolar transistors fabricated on CMOS-compatible silicon on insulator

    Institute of Scientific and Technical Information of China (English)

    Xu Xiao-Bo; Zhang He-Ming; Hu Hui-Yong; Ma Jian-Li; Xu Li-Jun

    2011-01-01

    The base-collector depletion capacitance for vertical SiGe npn heterojunction bipolar transistors (HBTs) on silicon on insulator (SOI) is split into vertical and lateral parts. This paper proposes a novel analytical depletion capacitance model of this structure for the first time. A large discrepancy is predicted when the present model is compared with the conventional depletion model, and it is shown that the capacitance decreases with the increase of the reverse collectorbase bias-and shows a kink as the reverse collector-base bias reaches the effective vertical punch-through voltage while the voltage differs with the collector doping concentrations, which is consistent with measurement results. The model can be employed for a fast evaluation of the depletion capacitance of an SOI SiGe HBT and has useful applications on the design and simulation of high performance SiGe circuits and devices.

  9. Impact of strain on gate-induced floating body effect for partially depleted silicon-on-insulator p-type metal–oxide–semiconductor-field-effect-transistors

    Energy Technology Data Exchange (ETDEWEB)

    Lo, Wen-Hung [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan, ROC (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan, ROC (China); Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan, ROC (China); Dai, Chih-Hao [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan, ROC (China); Chung, Wan-Lin [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan, ROC (China); Chen, Ching-En; Ho, Szu-Han [Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, ROC (China); Tsai, Jyun-Yu [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan, ROC (China); Chen, Hua-Mao [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan, ROC (China); Liu, Guan-Ru [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan, ROC (China); Cheng, Osbert; Huang, Cheng-Tung [Device Department, United Microelectronics Corporation, Tainan Science Park, Taiwan, ROC (China)

    2013-01-01

    This work investigates impact of mechanical strain on gate-induced-floating-body-effect (GIFBE) for partially depleted silicon-on-insulator p-type metal–oxide–semiconductor field effect transistors (PD SOI p-MOSFETs). First part, the original mechanism of GIFBE on PD SOI p-MOSFETs is studied. The experimental results indicate that GIFBE causes a reduction in oxide electric field (E{sub ox}), resulting in an underestimate of negative-bias temperature instability (NBTI) degradation. This can be attributed to the electrons tunneling from the process-induced partial n{sup +} poly gate and anode electron injection (AEI) model, rather than the electron valence band tunneling (EVB) widely accepted as the mechanism for n-MOSFETs. And then, the second part shows that the strained FB device has less NBTI degradation than the unstrained devices. This behavior can be attributed to the fact that more electron accumulation was induced by strain-induced band gap narrowing, reducing NBTI significantly. - Highlights: ► This work investigates the impact of mechanical strain on GIFBE for PD SOI p-MOSFETs. ► FB device shows an insignificant NBTI due to GIFBE. ► GIFBE results from the partial n{sup +} poly gate and anode electron injection model. ► The strained FB device has less NBTI degradation than unstrained devices. ► We verify the band gap narrowing causes less NBTI on strained FB device.

  10. Low-energy MOS depletion modulators in silicon-on-insulator micro-donut resonators coupled to bus waveguides.

    Science.gov (United States)

    Soref, Richard; Guo, Junpeng; Sun, Greg

    2011-09-12

    Electrical, optical and electro-optical simulations are presented for a waveguided, resonant, bus-coupled, p-doped Si micro-donut MOS depletion modulator operating at the 1.55 μm wavelength. To minimize the switching voltage and energy, a high-K dielectric film of HfO₂ or ZrO₂ is chosen as the gate dielectric, while a narrow ring-shaped layer of p-doped poly-silicon is selected for the gate electrode, rather than metal, to minimize plasmonic loss loading of the fundamental TE mode. In a 6-μm-diam high-Q resonator, an infrared intensity extinction ratio of 6 dB is predicted for a modulation voltage of 2 V and a switching energy of 4 fJ/bit. A speed-of-response around 1 ps is anticipated. For a modulator scaled to operate at 1.3 μm, the estimated switching energy is 2.5 fJ/bit.

  11. Fully-depleted silicon-on-sapphire and its application to advanced VLSI design

    Science.gov (United States)

    Offord, Bruce W.

    1992-01-01

    In addition to the widely recognized advantages of full dielectric isolation, e.g., reduced parasitic capacitance, transient radiation hardness, and processing simplicity, fully-depleted silicon-on-sapphire offers reduced floating body effects and improved thermal characteristics when compared to other silicon-on-insulator technologies. The properties of this technology and its potential impact on advanced VLSI circuitry will be discussed.

  12. Comparison of Three Dimensional Partially and Fully Depleted SOI MOSFET Characteristics Using Mathcad

    Directory of Open Access Journals (Sweden)

    Neha Goel

    2016-03-01

    Full Text Available In this Paper, comparison of three Dimensional characteristics between partially and fully depleted Silicon-On-Insulator (SOI MOSFET is presented, this is done through 3D device modeling using mathcad, based on the numerical solution of three dimensional Poisson’s equation. Behavior of Various Parameters like Surface Potential, Threshold Voltage, Electric field and Drain current are presented in this paper.

  13. Temporal ringdown of silicon-on-insulator racetrack resonators.

    Science.gov (United States)

    Karle, T J; Raineri, F; Roppo, V; Bordas, F; Monnier, P; Ali, S; Sivan, I; Raj, R

    2013-07-01

    Ring-down temporal measurements of silicon-on-insulator wire racetrack resonators are performed with 150 fs input pulses using a parametric process in a nonlinear crystal to gate and amplify the weak output pulses. We measure the cavity round trip time and the quality factor of these all-pass filters and find excellent agreement with continuous wave spectroscopic measurements as well as with an analytic model built using numerical solutions for the fully vectorial waveguide modes.

  14. Surface Potential and Threshold Voltage Model of Fully Depleted Narrow Channel SOI MOSFET Using Analytical Solution of 3D Poisson’s Equation

    Directory of Open Access Journals (Sweden)

    Prashant Mani

    2015-06-01

    Full Text Available The present paper is about the modeling of surface potential and threshold voltage of Fully Depleted Silicon on Insulator MOSFET. The surface potential is calculated by solving the 3D Poisson’s equation analytically. The appropriate boundary conditions are used in calculations. The effect of narrow channel width and short channel length for suppression of SCE is analyzed. The narrow channel width effect in the threshold voltage is analyzed for thin film Fully Depleted SOI MOSFET.

  15. Testing fully depleted CCD

    Science.gov (United States)

    Casas, Ricard; Cardiel-Sas, Laia; Castander, Francisco J.; Jiménez, Jorge; de Vicente, Juan

    2014-08-01

    The focal plane of the PAU camera is composed of eighteen 2K x 4K CCDs. These devices, plus four spares, were provided by the Japanese company Hamamatsu Photonics K.K. with type no. S10892-04(X). These detectors are 200 μm thick fully depleted and back illuminated with an n-type silicon base. They have been built with a specific coating to be sensitive in the range from 300 to 1,100 nm. Their square pixel size is 15 μm. The read-out system consists of a Monsoon controller (NOAO) and the panVIEW software package. The deafualt CCD read-out speed is 133 kpixel/s. This is the value used in the calibration process. Before installing these devices in the camera focal plane, they were characterized using the facilities of the ICE (CSIC- IEEC) and IFAE in the UAB Campus in Bellaterra (Barcelona, Catalonia, Spain). The basic tests performed for all CCDs were to obtain the photon transfer curve (PTC), the charge transfer efficiency (CTE) using X-rays and the EPER method, linearity, read-out noise, dark current, persistence, cosmetics and quantum efficiency. The X-rays images were also used for the analysis of the charge diffusion for different substrate voltages (VSUB). Regarding the cosmetics, and in addition to white and dark pixels, some patterns were also found. The first one, which appears in all devices, is the presence of half circles in the external edges. The origin of this pattern can be related to the assembly process. A second one appears in the dark images, and shows bright arcs connecting corners along the vertical axis of the CCD. This feature appears in all CCDs exactly in the same position so our guess is that the pattern is due to electrical fields. Finally, and just in two devices, there is a spot with wavelength dependence whose origin could be the result of a defectous coating process.

  16. Design and simulation of blue/violet sensitive photodetectors in silicon-on-insulator

    Institute of Scientific and Technical Information of China (English)

    Han Zhitao; Chu Jinkui; Meng Fantao; Jin Rencheng

    2009-01-01

    According to Lambert's law, a novel structure of photodetectors, namely photodetectors in silicon on-insulator, is proposed. By choosing a certain thickness value for the SOI layer, the photodetector can absorb blue/violet light effectively and affect the responsivity of the long wavelength in the visible and near-infrared re gion, making a blue/violet filter unnecessary. The material of the SOI layer is high-resistivity floating-zone silicon which can cause the neutral N type SOI layer to become fully depleted after doping with a P type impurity. This can improve the collection efficiency of short-wavelength photogenerated carriers. The device structure was optimized through numerical simulation, and the results show that the photodiode is a kind of high performance photodetector in the blue/violet region.

  17. Silicon on insulator self-aligned transistors

    Science.gov (United States)

    McCarthy, Anthony M.

    2003-11-18

    A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

  18. Silicon on insulator with active buried regions

    Science.gov (United States)

    McCarthy, A.M.

    1996-01-30

    A method is disclosed for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors. 10 figs.

  19. Silicon on insulator (SOI) technology; Technologie silicium sur isolant (SOI)

    Energy Technology Data Exchange (ETDEWEB)

    Cristoloveanu, S.; Balestra, F. [Centre National de la Recherche Scientifique (CNRS), Institut de Microelectronique, Electromagnetisme et Photonique, IMEP, Ecole Nationale Superieure d' Electronique et de Radioelectricite de Grenoble, ENSERG, 38 - Grenoble (France)

    2002-05-01

    The silicon on insulator (SOI) technology was invented in the 1960's and 1970's in order to satisfy the demand of hardened integrated circuits with respect to ionizing radiations. This technology uses an embedded oxide for a perfect dielectric insulation between the active circuit (superficial) layer and the massive silicon substrate (responsible of undesirable parasite effects). The SOI technology is a first-class technology for the fabrication of low consumption and high frequency components. This article describes the state-of-the-art of the SOI technology, starting with the methods of synthesis of the main materials. The essential advantages of SOI circuits with respect to conventional massive silicon devices are presented with some typical examples of components (totally or partially depleted MOS transistors, miniaturization of conventional MOS transistors, innovative architectures). Finally the challenges to be taken up by the SOI technology to spread over the market of microelectronics are discussed. (J.S.)

  20. Microanalysis of silicon-on-insulator materials

    Energy Technology Data Exchange (ETDEWEB)

    Earwaker, L.G.; Briggs, M.C. (School of Physics and Space Research, Univ. of Birmingham (UK)); Farr, J.P.G. (Dept. of Metallurgy and Materials, Univ. of Birmingham (UK)); Keen, J.M. (Royal Signals and Radar Establishment, Great Malvern (UK))

    1991-03-01

    Silicon-on-insulator (SOI) material produced by the porous silicon route has been analysed using nuclear techniques in the ion microprobe at the University of Birmingham, School of Physics and Space Research. The analysis system, based on CAMAC and a 1050 Falcon LSI 11/12 microprocessor, is described and measurements are reported of early attempts to metallise masked porous silicon structures. It is found that the porous silicon has been converted to tungsten between islands and a thin skin of tungsten has been produced on the surface of the islands. Oxidation of the tungsten surface has also been observed and evidence found for some penetration of tungsten through pinholes in the protective nitride layer over the islands. (orig.).

  1. Physics of Fully Depleted CCDs

    CERN Document Server

    Holland, S E; Kolbe, W F; Lee, J S

    2014-01-01

    In this work we present simple, physics-based models for two effects that have been noted in the fully depleted CCDs that are presently used in the Dark Energy Survey Camera. The first effect is the observation that the point-spread function increases slightly with the signal level. This is explained by considering the effect on charge-carrier diffusion due to the reduction in the magnitude of the channel potential as collected signal charge acts to partially neutralize the fixed charge in the depleted channel. The resulting reduced voltage drop across the carrier drift region decreases the vertical electric field and increases the carrier transit time. The second effect is the observation of low-level, concentric ring patterns seen in uniformly illuminated images. This effect is shown to be most likely due to lateral deflection of charge during the transit of the photogenerated carriers to the potential wells as a result of lateral electric fields. The lateral fields are a result of space charge in the fully...

  2. Silicon on insulator achieved using electrochemical etching

    Science.gov (United States)

    McCarthy, A.M.

    1997-10-07

    Bulk crystalline silicon wafers are transferred after the completion of circuit fabrication to form thin films of crystalline circuitry on almost any support, such as metal, semiconductor, plastic, polymer, glass, wood, and paper. In particular, this technique is suitable to form silicon-on-insulator (SOI) wafers, whereby the devices and circuits formed exhibit superior performance after transfer due to the removal of the silicon substrate. The added cost of the transfer process to conventional silicon fabrication is insignificant. No epitaxial, lift-off, release or buried oxide layers are needed to perform the transfer of single or multiple wafers onto support members. The transfer process may be performed at temperatures of 50 C or less, permits transparency around the circuits and does not require post-transfer patterning. Consequently, the technique opens up new avenues for the use of integrated circuit devices in high-brightness, high-resolution video-speed color displays, reduced-thickness increased-flexibility intelligent cards, flexible electronics on ultrathin support members, adhesive electronics, touch screen electronics, items requiring low weight materials, smart cards, intelligent keys for encryption systems, toys, large area circuits, flexible supports, and other applications. The added process flexibility also permits a cheap technique for increasing circuit speed of market driven technologies such as microprocessors at little added expense. 57 figs.

  3. Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors

    Science.gov (United States)

    Roeckerath, M.; Lopes, J. M. J.; Özben, E. Durǧun; Urban, C.; Schubert, J.; Mantl, S.; Jia, Y.; Schlom, D. G.

    2010-01-01

    Terbium scandate thin films were deposited by e-gun evaporation on (100) silicon substrates. Rutherford backscattering spectrometry and x-ray diffraction studies revealed homogeneous chemical compositions of the films. A dielectric constant of 26 and CV-curves with small hystereses were measured as well as low leakage current densities of <1 nA/cm2. Fully depleted n-type field-effect transistors on thin silicon-on-insulator substrates with terbium scandate gate dielectrics were fabricated with a gate-last process. The devices show inverse subthreshold slopes of 80 mV/dec and a carrier mobility for electrons of 225 cm2/V•s was extracted.

  4. Integrated programmable photonic filter on the silicon -on- insulator platform

    DEFF Research Database (Denmark)

    Liao, Shasha; Ding, Yunhong; Peucheret, Christophe

    2014-01-01

    We propose and demonstrate a silicon - on - insulator (SOI) on - chip programmable filter based on a four - tap finite impulse response structure. The photonic filter is programmable thanks to amplitude and phase modulation of each tap controlled by thermal heater s. We further demonstrate...

  5. Silicon-on-Insulator-Based Waveguide Switch with Fast Response

    Institute of Scientific and Technical Information of China (English)

    CHEN Yuan-Yuan; LI Yun-Tao; XIA Jin-Song; LIU Jing-Wei; CHEN Shao-Wu; YU Jin-Zhong

    2005-01-01

    @@ Based on thermo-optical effect of silicon, a 2 × 2 switch is fabricated in silicon-on-insulator by chemical etching.The switch presents an extinction ratio of 26dB and a power consumption of 169mW. The response time is ~ 10.5μs.

  6. Investigation of veritcal graded channel doping in nanoscale fully-depleted SOI-MOSFET

    Science.gov (United States)

    Ramezani, Zeinab; Orouji, Ali A.

    2016-10-01

    For achieving reliable transistor, we investigate an amended channel doping (ACD) engineering which improves the electrical and thermal performances of fully-depleted silicon-on-insulator (SOI) MOSFET. We have called the proposed structure with the amended channel doping engineering as ACD-SOI structure and compared it with a conventional fully-depleted SOI MOSFET (C-SOI) with uniform doping distribution using 2-D ATLAS simulator. The amended channel doping is a vertical graded doping that is distributed from the surface of structure with high doping density to the bottom of channel, near the buried oxide, with low doping density. Short channel effects (SCEs) and leakage current suppress due to high barrier height near the source region and electric field modification in the ACD-SOI in comparison with the C-SOI structure. Furthermore, by lower electric field and electron temperature near the drain region that is the place of hot carrier generation, we except the improvement of reliability and gate induced drain lowering (GIDL) in the proposed structure. Undesirable Self heating effect (SHE) that become a critical challenge for SOI MOSFETs is alleviated in the ACD-SOI structure because of utilizing low doping density near the buried oxide. Thus, refer to accessible results, the ACD-SOI structure with graded distribution in vertical direction is a reliable device especially in low power and high temperature applications.

  7. Propagation of Ultra-fast Femtosecond Pulses in Silicon-on-insulator Optical Waveguides

    Institute of Scientific and Technical Information of China (English)

    WU Jian-wei; LUO Feng-guang; Cristiano de Mello Gallep

    2007-01-01

    A complete theoretical modeling, avoiding any priori-assumption, is deduced and demonstrated for ultra-fast femtosecond optical pulses in silicon-on-insulator optical waveguides which includes the group velocity dispersion, third-order dispersion, self-phase and cross-phase modulations, self-steepening and shock formation, Raman depletion, propagation loss, two-photon absorption, free-carrier absorption, and free-carrier dispersion. Finally, the temporal and spectral characteristics of 100 fs optical pulses at 1.55 μm are numerically observed in 5-mm-long waveguides while considering different initial chirps and incident peak intensity levels.

  8. Process-induced strain in silicon-on-insulator materials

    CERN Document Server

    Tiberj, A; Blanc, C; Contreras, S; Camassel, J

    2002-01-01

    We present a detailed investigation of the influence of oxidation and thinning processes on the in-plane stress in silicon-on-insulator materials. Combining double x-ray diffraction, Fourier transformed infrared and micro-Raman spectroscopy, we show that one can separately evaluate the stress present in the silicon over layer, the buried oxide and the underlying (handle) silicon wafer at any time of a device-forming process.

  9. Grating-assisted silicon-on-insulator racetrack resonator reflector.

    Science.gov (United States)

    Boeck, Robert; Caverley, Michael; Chrostowski, Lukas; Jaeger, Nicolas A F

    2015-10-05

    We experimentally demonstrate a grating-assisted silicon-on-insulator (SOI) racetrack resonator reflector with a reflect port suppression of 10.3 dB and no free spectral range. We use contra-directional grating couplers within the coupling regions of the racetrack resonator to enable suppression of all but one of the peaks within the reflect port spectrum as well as all but one of the notches within the through port spectrum.

  10. Density dependence of electron mobility in the accumulation mode for fully depleted SOI films

    Energy Technology Data Exchange (ETDEWEB)

    Naumova, O. V., E-mail: naumova@isp.nsc.ru; Zaitseva, E. G.; Fomin, B. I.; Ilnitsky, M. A.; Popov, V. P. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2015-10-15

    The electron mobility µ{sub eff} in the accumulation mode is investigated for undepleted and fully depleted double-gate n{sup +}–n–n{sup +} silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistors (MOSFET). To determine the range of possible values of the mobility and the dominant scattering mechanisms in thin-film structures, it is proposed that the field dependence of the mobility µ{sub eff} be replaced with the dependence on the density N{sub e} of induced charge carriers. It is shown that the dependences µ{sub eff}(N{sub e}) can be approximated by the power functions µ{sub eff}(N{sub e}) ∝ N{sub e}{sup -n}, where the exponent n is determined by the chargecarrier scattering mechanism as in the mobility field dependence. The values of the exponent n in the dependences µ{sub eff}(N{sub e}) are determined when the SOI-film mode near one of its surfaces varies from inversion to accumulation. The obtained results are explained from the viewpoint of the electron-density redistribution over the SOI-film thickness and changes in the scattering mechanisms.

  11. Synthesis of wirelike silicon nanostructures by dispersion of silicon on insulator using electroless etching

    Science.gov (United States)

    Mantey, Kevin; Shams, Somayeh; Nayfeh, Munir H.; Nayfeh, Osama; Alhoshan, Mansour; Alrokayan, Salman

    2010-12-01

    We employ electroless etching to disperse silicon on insulator (SOI) wafers in ionic silver HF into wirelike silicon nanostructures. The procedure allows detachment of the nanowires at the oxide interface and enables easy recovery of dispersions for subsequent controlled delivery. Nanowires 10 μm long and 50-100 nm thick are demonstrated using an SOI substrate of 10 μm device thickness. Direct material analysis shows no silver contamination after a wet-etch silver clean. Anodization treatment of the wires was conducted. Our measurements and analysis show that the wires are not amenable to anodization resulting from the fact that the nanowire radius is less than the thickness of depletion layer. The procedure has the potential of providing dispersions of arbitrarily long wirelike nanostructures which are useful for composite and energy applications.

  12. Model of Vernier devices in silicon-on-insulator technology

    Science.gov (United States)

    Fan, Guofang; Li, Yuan; Hu, Chunguang; Lei, Lihua; Zhao, Dong; Li, Hongyu; Luo, Yunhan; Zhen, Zhen

    2014-07-01

    In order to increase the number of channels that could be multiplexed or demultiplexed in the dense wavelength division multiplexed (DWDM) system based on the resonators on silicon-on-insulator (SOI) technology, the Vernier effect in the series-coupled racetrack resonators is presented to extend the free spectral range (FSR) of the DWDM systems. A method is developed based on a matrix approach to simulate Vernier devices. A three-dimensional full vectorial finite difference (FVFD) model, specifically suited for high index contrast and smaller size waveguides, for example, a waveguide in SOI technology, is developed to obtain the properties of a waveguide. Finally, the Vernier effect in the two series-coupled racetrack resonators is experimentally verified with an improved FSR and interstitial resonance suppression.

  13. Optical refractive index biosensor using evanescently coupled lateral Bragg gratings on silicon-on-insulator

    Science.gov (United States)

    Mendez-Astudillo, Manuel; Takahisa, Hiroki; Okayama, Hideaki; Nakajima, Hirochika

    2016-08-01

    In this paper, we present a compact silicon-on-insulator optical biosensor based on lateral Bragg gratings evanescently coupled to a waveguide. The device is fabricated by electron-beam lithography and dry-etched in a single step with inductive coupled plasma reactive ion etching (ICP-RIE). Fully etched grating couplers are used to couple the light in and out of the chip, while lateral Bragg gratings are used as the sensing element of the device. A sensitivity of 22 nm/RIU is obtained by exposing the device to deionized water with different NaCl concentrations with a footprint area of 15 × 4 µm2 that allows for densely multiplexed solutions.

  14. A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs with high- dielectric

    Institute of Scientific and Technical Information of China (English)

    Gopi Krishna Saramekala; Sarvesh Dubey; Pramod Kumar Tiwari

    2015-01-01

    In this paper, a surface potential based threshold voltage model of fully-depleted (FD) recessed-source/drain (Re-S/D) silicon-on-insulator (SOI) metal-oxide semiconductor field-effect transistor (MOSFET) is presented while considering the effects of high-k gate-dielectric material induced fringing-field. The two-dimensional (2D) Poisson’s equation is solved in a channel region in order to obtain the surface potential under the assumption of the parabolic potential profile in the trans-verse direction of the channel with appropriate boundary conditions. The accuracy of the model is verified by comparing the model’s results with the 2D simulation results from ATLAS over a wide range of channel lengths and other parameters, including the dielectric constant of gate-dielectric material.

  15. Ultra-low-loss inverted taper coupler for silicon-on-insulator ridge waveguide

    DEFF Research Database (Denmark)

    Pu, Minhao; Liu, Liu; Ou, Haiyan;

    2010-01-01

    An ultra-low-loss coupler for interfacing a silicon-on-insulator ridge waveguide and a single-mode fiber in both polarizations is presented. The inverted taper coupler, embedded in a polymer waveguide, is optimized for both the transverse-magnetic and transverse-electric modes through tapering...... the width of the silicon-on-insulator waveguide from 450 nm down to less than 15 nm applying a thermal oxidation process. Two inverted taper couplers are integrated with a 3-mm long silicon-on-insulator ridge waveguide in the fabricated sample. The measured coupling losses of the inverted taper coupler...

  16. Lithium Depletion in Fully Convective Pre-Main Sequence Stars

    CERN Document Server

    Bildsten, L; Matzner, C D; Ushomirsky, G; Bildsten, Lars; Brown, Edward F.; Matzner, Christopher D.; Ushomirsky, Greg

    1996-01-01

    We present an analytic calculation of the thermonuclear depletion of lithium in contracting, fully convective, pre-main sequence stars of mass M 0.08 M_sun) and for constraining the masses of lithium depleted stars.

  17. Near infrared light amplification in Gold diffused Silicon-on-Insulator waveguides

    CERN Document Server

    Stepanov, S

    2016-01-01

    We report near infrared optical amplification in gold diffused silicon-on-insulator waveguides by visible optical pumping. More then 30dB/cm gain was measured for a light carrier at a wavelength of 1.55 microns

  18. Microwave photonic phase shifter based on tunable silicon-on-insulator microring resonator

    DEFF Research Database (Denmark)

    Pu, Minhao; Liu, Liu; Xue, Weiqi;

    2010-01-01

    We demonstrate a microwave photonic phase shifter based on an electrically tunable silicon-on-insulator microring resonator. A continuously tunable phase shift of up to 315° at a microwave frequency of 15GHz is obtained.......We demonstrate a microwave photonic phase shifter based on an electrically tunable silicon-on-insulator microring resonator. A continuously tunable phase shift of up to 315° at a microwave frequency of 15GHz is obtained....

  19. First order Bragg grating filters in silicon on insulator waveguides

    Science.gov (United States)

    Waugh, Peter Michael

    2008-08-01

    The subject of this project is the design; analysis, fabrication and characterisation of first order Bragg Grating optical filters in Silicon-on-Insulator (SOI) planar waveguides. It is envisaged that this work will result in the possibility of Bragg Grating filters for use in Silicon Photonics. It is the purpose of the work to create as far as is possible flat surface waveguides so as to facilitate Thermo-Optic tuning and also the incorporation into rib-waveguide Silicon Photonics. The spectral response of the shallow Bragg Gratings was modelled using Coupled Mode Theory (CMT) by way of RSoft Gratingmod TM. Also the effect of having a Bragg Grating with alternate layers of refractive index of 1.5 and 3.5 was simulated in order to verify that Silica and Silicon layered Bragg Gratings could be viable. A series of Bragg Gratings were patterned on 1.5 micron SOI at Philips in Eindhoven, Holland to investigate the variation of grating parameters with a) the period of the gratings b) the mark to space ratio of the gratings and c) the length of the region converted to Bragg Gratings (i.e. the number of grating period repetitions). One set of gratings were thermally oxidised at Philips in Eindhoven and another set were ion implanted with Oxygen ions at the Ion Beam Facility, University of Surrey, England. The gratings were tested and found to give transmission minima at approximately 1540 nanometres and both methods of creating flat surfaces were found to give similar minima. Atomic Force Microscopy was applied to the grating area of the as-implanted samples in the Advanced Technology Institute, University of Surrey, which were found to have surface undulations in the order of 60 nanometres.

  20. Heteroepitaxial growth of Ge on compliant strained nano-structured Si lines and dots on (001) silicon on insulator substrate

    Energy Technology Data Exchange (ETDEWEB)

    Zaumseil, Peter, E-mail: zaumseil@ihp-microelectronics.com [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Yamamoto, Yuji; Schubert, Markus Andreas [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Schroeder, Thomas [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Brandenburgische Technische Universität Cottbus, Konrad-Zuse-Str.1, Cottbus, 03046 (Germany); Tillack, Bernd [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Technische Universität Berlin, HFT4, Einsteinufer 25, 10587 Berlin (Germany)

    2014-04-30

    On the way to integrate lattice mismatched semiconductors on Si(001) we studied the Ge/Si heterosystem with the aim of a misfit dislocation free deposition that offers the vision to integrate defect-free alternative semiconductor structures on Si. Periodic Ge nano-structures (dots and lines) were selectively grown by chemical vapor deposition on Si nano-islands on silicon on insulator substrate with a thin (about 10 nm) SiGe buffer layer between Si and Ge. The strain state of the structures was measured by grazing incidence and specular diffraction using laboratory-based X-ray diffraction technique. The SiGe improves the compliance of the Si compared to direct Ge deposition, prevents plastic relaxation during growth, and allows elastic relaxation before Ge is deposited on top. As a result, an epitaxial growth of Ge on Si fully free of misfit dislocations was achieved. - Highlights: • Realization of nano-structured Si islands (dots and lines) on silicon on insulator substrate • Selective Ge epitaxy on nano-structured periodic Si islands with thin SiGe buffer • Strain characterization of Ge nano-structures by X-ray diffraction • Ge heteroepitaxy on Si without misfit dislocation confirmed by transmission electron microscopy.

  1. High-Q silicon-on-insulator optical rib waveguide racetrack resonators

    Science.gov (United States)

    Kiyat, Isa; Aydinli, Atilla; Dagli, Nadir

    2005-03-01

    In this work, detailed design and realization of high quality factor (Q) racetrack resonators based on silicon-on-insulator rib waveguides are presented. Aiming to achieve critical coupling, suitable waveguide geometry is determined after extensive numerical studies of bending loss. The final design is obtained after coupling factor calculations and estimation of propagation loss. Resonators with quality factors (Q) as high as 119000 has been achieved, the highest Q value for resonators based on silicon-on-insulator rib waveguides to date with extinction ratios as large as 12 dB.

  2. High-Q silicon-on-insulator optical rib waveguide racetrack resonators.

    Science.gov (United States)

    Kiyat, Isa; Aydinli, Atilla; Dagli, Nadir

    2005-03-21

    In this work, detailed design and realization of high quality factor (Q) racetrack resonators based on silicon-on-insulator rib waveguides are presented. Aiming to achieve critical coupling, suitable waveguide geometry is determined after extensive numerical studies of bending loss. The final design is obtained after coupling factor calculations and estimation of propagation loss. Resonators with quality factors (Q) as high as 119000 has been achieved, the highest Q value for resonators based on silicon-on-insulator rib waveguides to date with extinction ratios as large as 12 dB.

  3. 360° tunable microwave phase shifter based on silicon-on-insulator dual-microring resonator

    DEFF Research Database (Denmark)

    Pu, Minhao; Xue, Weiqi; Liu, Liu;

    2010-01-01

    We demonstrate tunable microwave phase shifters based on electrically tunable silicon-on-insulator dual-microring resonators. A quasi-linear phase shift of 360° with ~2dB radio frequency power variation at a microwave frequency of 40GHz is obtained......We demonstrate tunable microwave phase shifters based on electrically tunable silicon-on-insulator dual-microring resonators. A quasi-linear phase shift of 360° with ~2dB radio frequency power variation at a microwave frequency of 40GHz is obtained...

  4. Ultra-low loss nano-taper coupler for Silicon-on-Insulator ridge waveguide

    DEFF Research Database (Denmark)

    Pu, Minhao; Liu, Liu; Ou, Haiyan;

    2010-01-01

    A nano-taper coupler is optimized specially for the transverse-magnetic mode for interfacing light between a silicon-on-insulator ridge waveguide and a single-mode fiber. An ultra-low coupling loss of ~0.36dB is achieved for the nano-taper coupler....

  5. Focused ion beam milling of photonic crystals in silicon on insulator

    NARCIS (Netherlands)

    Hu, Wenbin; Hopman, Wico; Ridder, de René

    2009-01-01

    A photonic crystal slab, consisting of an array of circular sub-micron diameter holes in Silicon on Insulator (SOI), has been fabricated using focused ion beam (FIB) milling. This application requires the sidewalls of the holes to be very smooth and as nearly perpendicular to the slab as possible. T

  6. Ultrafast nonlinear all-optical processes in silicon-on-insulator waveguides

    NARCIS (Netherlands)

    Dekker, R.; Usechak, N.; Först, M.; Driessen, A.

    2007-01-01

    In this review we present an overview of the progress made in recent years in the field of integrated silicon-on-insulator (SOI) waveguide photonics with a strong emphasis on third-order nonlinear optical processes. Although the focus is on simple waveguide structures the utilization of complex stru

  7. Tunable microwave phase shifter based on silicon-on-insulator microring resonator

    DEFF Research Database (Denmark)

    Pu, Minhao; Liu, Liu; Xue, Weiqi;

    2010-01-01

    We demonstrate microwave phase shifters based on electrically tunable silicon-on-insulator microring resonators (MRRs). MRRs with different quality factors are fabricated and tested. A continuously tunable phase shift of up to 336 at a microwave frequency of 40 GHz is obtained using a high...

  8. Widely tunable microwave phase shifter based on silicon-on-insulator dual-microring resonator

    DEFF Research Database (Denmark)

    Pu, Minhao; Liu, Liu; Xue, Weiqi;

    2010-01-01

    We propose and demonstrate tunable microwave phase shifters based on electrically tunable silicon-on-insulator microring resonators. The phase-shifting range and the RF-power variation are analyzed. A maximum phase-shifting range of 0~600° is achieved by utilizing a dual-microring resonator...

  9. Silicon-on-insulator polarization splitting and rotating device for polarization diversity circuits

    DEFF Research Database (Denmark)

    Liu, Liu; Ding, Yunhong; Yvind, Kresten;

    2011-01-01

    A compact and efficient polarization splitting and rotating device built on the silicon-on-insulator platform is introduced, which can be readily used for the interface section of a polarization diversity circuit. The device is compact, with a total length of a few tens of microns. It is also...

  10. Sensitivity analysis of silicon-on-insulator quadruple Vernier racetrack resonators

    Science.gov (United States)

    Boeck, Robert; Chrostowski, Lukas; Jaeger, Nicolas A. F.

    2015-11-01

    We present a theoretical sensitivity analysis of silicon-on-insulator quadruple Vernier racetrack resonators based on varying, one at a time, various fabrication-dependent parameters. These parameters include the waveguide widths, heights, and propagation losses. We show that it should be possible to design a device that meets typical commercial specifications while being tolerant to changes in these parameters.

  11. Carrier-transport mechanism of Er-silicide Schottky contacts to strained-silicon-on-insulator and silicon-on-insulator.

    Science.gov (United States)

    Jyothi, I; Janardhanam, V; Kang, Min-Sung; Yun, Hyung-Joong; Lee, Jouhahn; Choi, Chel-Jong

    2014-11-01

    The current-voltage characteristics and the carrier-transport mechanism of the Er-silicide (ErSi1.7) Schottky contacts to strained-silicon-on-insulator (sSOI) and silicon-on-insulator (SOI) were investigated. Barrier heights of 0.74 eV and 0.82 eV were obtained for the sSOI and SOI structures, respectively. The barrier height of the sSOI structure was observed to be lower than that of the SoI structure despite the formation of a Schottky contact using the same metal silicide. The sSOI structure exhibited better rectification and higher current level than the SOI structure, which could be associated with a reduction in the band gap of Si caused by strain. The generation-recombination mechanism was found to be dominant in the forward bias for both structures. Carrier generation along with the Poole-Frenkel mechanism dominated the reverse-biased current in the SOI structure. The saturation tendency of the reverse leakage current in the sSOI structure could be attributed to strain-induced defects at the interface in non-lattice-matched structures.

  12. Analysis of Temperature Dependence of Silicon-on-Insulator Thermo-Optic Attenuator

    Institute of Scientific and Technical Information of China (English)

    LI Yun-Tao; YU Jin-Zhong; CHEN Yuan-Yuan; SUN Fei; CHEN Shao-Wu

    2007-01-01

    The temperature dependence of silicon-on-insulator thermo-optic attenuators is analysed, which originates from the temperature dependence of characteristics of multimode interference. The attenuator depth and power consumption are independent of temperature while the insertion loss depends on the temperature heavily. The variation of the insertion loss decreases from 4.3 dB to 1 dB as the temperature increases from 273 K to 343 K.

  13. Monolithic integration of erbium-doped amplifiers with silicon-on-insulator waveguides.

    Science.gov (United States)

    Agazzi, Laura; Bradley, Jonathan D B; Dijkstra, Meindert; Ay, Feridun; Roelkens, Gunther; Baets, Roel; Wörhoff, Kerstin; Pollnau, Markus

    2010-12-20

    Monolithic integration of Al2O3:Er3+ amplifier technology with passive silicon-on-insulator waveguides is demonstrated. A signal enhancement of >7 dB at 1533 nm wavelength is obtained. The straightforward wafer-scale fabrication process, which includes reactive co-sputtering and subsequent reactive ion etching, allows for parallel integration of multiple amplifier and laser sections with silicon or other photonic circuits on a chip.

  14. Fully depleted back-illuminated p-channel CCD development

    Energy Technology Data Exchange (ETDEWEB)

    Bebek, Chris J.; Bercovitz, John H.; Groom, Donald E.; Holland, Stephen E.; Kadel, Richard W.; Karcher, Armin; Kolbe, William F.; Oluseyi, Hakeem M.; Palaio, Nicholas P.; Prasad, Val; Turko, Bojan T.; Wang, Guobin

    2003-07-08

    An overview of CCD development efforts at Lawrence Berkeley National Laboratory is presented. Operation of fully-depleted, back-illuminated CCD's fabricated on high resistivity silicon is described, along with results on the use of such CCD's at ground-based observatories. Radiation damage and point-spread function measurements are described, as well as discussion of CCD fabrication technologies.

  15. Semi-analytical model of Raman generation in silicon-on-insulator rib waveguide with DBR/F-P resonator

    National Research Council Canada - National Science Library

    Tyszka-Zawadzka, A; Szczepański, P; Mossakowska-Wyszyńska, A; Karpierz, M; Bugaj, M

    2013-01-01

    An approximate method of modelling of Raman generation in silicon-on-insulator (SOI) rib waveguide with DBR/F-P resonator including spatial field distribution and nonlinear effects such as Raman amplification and two photon absorption...

  16. On the two-dimensional metallic state in silicon-on-insulator structures

    OpenAIRE

    Brunthaler, G.; Prinz, A.; Pillwein, G.; Lindelof, P. E.; Ahopelto, J.

    2002-01-01

    It is shown that the electronic conduction in silicon-on-insulator (SOI) layers exhibits a metallic regime which is very similar to that in high-mobility Si-metal oxide semiconductor structures (MOS). The peak in the electron mobility versus density, the strong drop in resistivity and the critical concentration for the metal-insulator transition are all consistent. On the basis of our SOI data for the temperature and in-plane magnetic field dependence of the resistivity, we discuss several mo...

  17. Pulse quenching induced by multi-collection effects in 45 nm silicon-on-insulator technology

    Science.gov (United States)

    Artola, L.; Hubert, G.

    2016-12-01

    This paper presents the analysis of pulse quenching effects induced in silicon-on-insulator (SOI) technology. Simulation results emphasize the need to consider multi-collection effects in the occurrence mechanisms of single event transients (SET) in very large scaling integration (VLSI) components even with SOI technologies, which is known to be initially less sensitive to soft errors (SE). The impacts of gate-to-gate spacing and voltage scaling on the SET occurrence and characteristics have been highlighted. The simulations have been performed with the soft error prediction tool MUSCA SEP3 developed for digital complementary metal oxide semiconductor (CMOS) technologies (SOI, Bulk).

  18. Integrated programmable photonic filter on the silicon-on-insulator platform.

    Science.gov (United States)

    Liao, Shasha; Ding, Yunhong; Peucheret, Christophe; Yang, Ting; Dong, Jianji; Zhang, Xinliang

    2014-12-29

    We propose and demonstrate a silicon-on-insulator (SOI) on-chip programmable filter based on a four-tap finite impulse response structure. The photonic filter is programmable thanks to amplitude and phase modulation of each tap controlled by thermal heaters. We further demonstrate the tunability of the filter central wavelength, bandwidth and variable passband shape. The tuning range of the central wavelength is at least 42% of the free spectral range. The bandwidth tuning range is at least half of the free spectral range. Our scheme has distinct advantages of compactness, capability for integrating with electronics.

  19. Analysis and Simulation of S-shaped Waveguide in Silicon-on-insulator

    Institute of Scientific and Technical Information of China (English)

    WANG Zhang-tao; FAN Zhong-cao; XIA Jin-song; CHEN Shao-wu; Yu Jinzhong

    2004-01-01

    The simulation and analysis of S-shaped waveguide bend are presented.Bend radius larger than 30 mm assures less than 0.5 dB radiation loss for a 4-μm-wide silicon-on-insulator waveguide bend with 2-μm etch depth.Intersection angle greater than 20° provides negligible crosstalk (<-30 dB) and very low insertion loss.Any reduction in bend radius and intersection angle is at the cost of the degradation of characteristics of bent waveguide and intersecting waveguide, respectively.

  20. Patterning of graphene on silicon-on-insulator waveguides through laser ablation and plasma etching

    Science.gov (United States)

    Van Erps, Jürgen; Ciuk, Tymoteusz; Pasternak, Iwona; Krajewska, Aleksandra; Strupinski, Wlodek; Van Put, Steven; Van Steenberge, Geert; Baert, Kitty; Terryn, Herman; Thienpont, Hugo; Vermeulen, Nathalie

    2016-05-01

    We present the use of femtosecond laser ablation for the removal of monolayer graphene from silicon-on-insulator (SOI) waveguides, and the use of oxygen plasma etching through a metal mask to peel off graphene from the grating couplers attached to the waveguides. Through Raman spectroscopy and atomic force microscopy, we show that the removal of graphene is successful with minimal damage to the underlying SOI waveguides. Finally, we employ both removal techniques to measure the contribution of graphene to the loss of grating-coupled graphene-covered SOI waveguides using the cut-back method. This loss contribution is measured to be 0.132 dB/μm.

  1. Strain dependence of the direct energy bandgap in thin silicon on insulator layers

    OpenAIRE

    Munguía, J; Bluet, J-M; Chouaib, H.; Bremond, G.; Mermoux, Michel; Bru-Chevallier, C

    2010-01-01

    Abstract Photoreflectance spectroscopy is applied on tensilely-strained silicon on insulator (sSOI) thin layers in order to evaluate the biaxial strain effect on the Si direct bandgap. The measured redshift of the transition (i.e. direct bandgap) with strain (~ -100 meV/%), corresponds to theoretical predictions. The hydrostatic and valence band deformation potential parameters for E 1 (i.e. transition close to L-point along the ?-direction) are also measured: and ' 0 E eV D 5. 0 5 . 7 1 1...

  2. A 4 × 4 Strictly Nonblocking Silicon-on-Insulator Thermo-Optic Switch Matrix

    Institute of Scientific and Technical Information of China (English)

    YANG Di; LI Yan-Ping; CHEN Shao-Wu; YU Jin-Zhong

    2005-01-01

    @@ A 4 × 4 strictly nonblocking thermo-optic switch matrix implemented with a 2 × 2 Mach-Zehnder switch unit was fabricated in silicon-on-insulator wafer. Insertion losses of the shortest and the longest path in the device are about 14.8dB and 19.2dB, respectively. The device presents a very low loss dependent on wavelength. For one switch unit, the power consumption needed for operation is measured to be 0.270 W-0.288 W and the switching time is about 13 ± 1μs.

  3. Fabrication of Thermo-Optic Switch in Silicon-on-Insulator

    Institute of Scientific and Technical Information of China (English)

    王章涛; 夏金松; 樊中朝; 陈少武; 余金中

    2003-01-01

    Silicon-on-insulator technology has been used to fabricate 2 × 2 thermo-optic switches. The switch shows crosstalk of-23.4 dB and extinction ratio of 18.1 dB in the bar-state. The switching speed is less than 30 μs and the power consumption is about 420mW. The measured excess loss is 1.8 dB. These merits make the switch more attractive for applications in wavelength division multiplexing.

  4. High temperature study of flexible silicon-on-insulator fin field-effect transistors

    KAUST Repository

    Diab, Amer El Hajj

    2014-09-29

    We report high temperature electrical transport characteristics of a flexible version of the semiconductor industry\\'s most advanced architecture: fin field-effect transistor on silicon-on-insulator with sub-20 nm fins and high-κ/metal gate stacks. Characterization from room to high temperature (150 °C) was completed to determine temperature dependence of drain current (Ids), gate leakage current (Igs), transconductance (gm), and extracted low-field mobility (μ0). Mobility degradation with temperature is mainly caused by phonon scattering. The other device characteristics show insignificant difference at high temperature which proves the suitability of inorganic flexible electronics with advanced device architecture.

  5. Guided acoustic and optical waves in silicon-on-insulator for Brillouin scattering and optomechanics

    Science.gov (United States)

    Sarabalis, Christopher J.; Hill, Jeff T.; Safavi-Naeini, Amir H.

    2016-10-01

    We numerically study silicon waveguides on silica showing that it is possible to simultaneously guide optical and acoustic waves in the technologically important silicon on insulator (SOI) material system. Thin waveguides, or fins, exhibit geometrically softened mechanical modes at gigahertz frequencies with phase velocities below the Rayleigh velocity in glass, eliminating acoustic radiation losses. We propose slot waveguides on glass with telecom optical frequencies and strong radiation pressure forces resulting in Brillouin gains on the order of 500 and 50 000 W-1m-1 for backward and forward Brillouin scattering, respectively.

  6. Silicon-on-Insulator Based Electro-optic Variable Optical Attenuator with a Series Structure

    Institute of Scientific and Technical Information of China (English)

    HE Yue-Jiao; LI Fang; LIU Yu-Liang

    2005-01-01

    An electro-optic variable optical attenuator in silicon-on-insulator is designed and fabricated. A series structure is used to improve the device efficiency. Compared to the attenuator in the single p-i-n diode structure in the same modulating length, the attenuation range of the device in the series structure improves 2-3 times in the same injecting current density, while the insertion loss is not affected. The maximum dynamic attenuation of the device is greater than 30dB. The response frequency is obtained to be about 2MHz.

  7. Commensurate germanium light emitters in silicon-on-insulator photonic crystal slabs.

    Science.gov (United States)

    Jannesari, R; Schatzl, M; Hackl, F; Glaser, M; Hingerl, K; Fromherz, T; Schäffler, F

    2014-10-20

    We report on the fabrication and characterization of silicon-on-insulator (SOI) photonic crystal slabs (PCS) with commensurately embedded germanium quantum dot (QD) emitters for near-infrared light emission. Substrate pre-patterning defines preferential nucleation sites for the self-assembly of Ge QDs during epitaxial growth. Aligned two-dimensional photonic crystal slabs are then etched into the SOI layer. QD ordering enhances the photoluminescence output as compared to PCSs with randomly embedded QDs. Rigorously coupled wave analysis shows that coupling of the QD emitters to leaky modes of the PCS can be tuned via their location within the unit cell of the PCS.

  8. Enhanced bandgap in annular photonic-crystal silicon-on-insulator asymmetric slabs.

    Science.gov (United States)

    Hou, Jin; Citrin, D S; Wu, Huaming; Gao, Dingshan; Zhou, Zhiping

    2011-06-15

    Photonic band structures of annular photonic-crystal (APC) silicon-on-insulator (SOI) asymmetric slabs with finite thickness were investigated by the three-dimensional plane-wave expansion method. The results show that for a broad range of air-volume filling factors, APC slabs can exhibit a significantly larger bandgap than conventional circular-hole photonic-crystal (PC) slabs. Bandgap enhancements over conventional air hole PC SOI slabs as large as twofold are predicted for low air-volume filling factors below 15%. This desirable behavior suggests a potential for APC SOI slabs to serve as the basis of various optical cavities, waveguides, and mirrors.

  9. Operation of Silicon-on-Insulator (SOI) Micro-ElectroMechanical Systems (MEMS) Gyroscopic Sensor as a Two-Axis Accelerometer

    Science.gov (United States)

    2012-04-01

    TECHNICAL REPORT RDMR-WS-12-02 OPERATION OF SILICON-ON-INSULATOR (SOI) MICRO-ELECTROMECHANICAL SYSTEMS ( MEMS ) GYROSCOPIC SENSOR...DATES COVERED Final 4. TITLE AND SUBTITLE Operation of Silicon-on-Insulator (SOI) Micro-ElectroMechanical Systems ( MEMS ) Gyroscopic Sensor as a...existing Silicon-on-Insulator (SOI) Micro- ElectroMechanical Systems ( MEMS ) gyroscopic sensor previously developed in the early-2000s under MEMS

  10. Optical functions of silicon from reflectance and ellipsometry on silicon-on-insulator and homoepitaxial samples

    Energy Technology Data Exchange (ETDEWEB)

    Humlíček, J., E-mail: humlicek@physics.muni.cz [CEITEC, Masaryk University, Kamenice 753/5, 62500 Brno (Czech Republic); Šik, J. [ON Semiconductor, 1. máje 2230, 75661 Rožnov p. Radhoštěm (Czech Republic)

    2015-11-21

    The optical properties of silicon have been determined from 0.2 to 6.5 eV at room temperature, using reflectance spectra of silicon-on-insulator (SOI) and ellipsometric spectra of homoepitaxial samples. Optimized Fabry-Perot-type SOI resonators exhibit high finesse even in near ultraviolet. Very high precision values of the real part of the refractive index are obtained in infrared up to a photon energy of 1.3 eV. The spectra of the extinction coefficient, based on observations of light attenuation, extend to 3.2 eV due to measurements on SOI layers as thin as 87 nm. These results allowed us to correct spectroellipsometric data on homoepitaxial samples for the presence of reduced and stabilized surface layers.

  11. Optimization of silicon-on-insulator based optical switch using tapered waveguides

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Optimiz ed 2×2 switches based on silicon-on-insulator (SOI) were demonstrated. In the design, single mode rib waveguides and multimode interferences (MMIs) are connected by tapered waveguides to reduce the mode coupling loss between the two types of waveguides. The average insertion loss of the switches is about -16.9 dB and the excess loss of one is measured of -1.3 dB. The worst crosstalk is larger than 25 dB. Experimental results indicate that some of the main characteristics of optical switches are improved in the modified design, which is according with theoretic analysis. The novel design can be used to improve the characteristics of optical switch matrixes based on 2×2 switch units.

  12. Fabrication of Si-based planar type patch clamp biosensor using silicon on insulator substrate

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Z.L.; Asano, T. [Graduate University for Advanced Studies, Myodaiji, Okazaki, 444-8585 (Japan); Uno, H. [Institute for Molecular Science, Myodaiji, Okazaki, 444-8585 (Japan); Tero, R. [Graduate University for Advanced Studies, Myodaiji, Okazaki, 444-8585 (Japan); Institute for Molecular Science, Myodaiji, Okazaki, 444-8585 (Japan); Suzui, M.; Nakao, S. [Institute for Molecular Science, Myodaiji, Okazaki, 444-8585 (Japan); Kaito, T. [SII NanoTechnology Inc., 36-1, Takenoshita, Oyama-cho, Sunto-gun, Shizuoka, 410-1393 (Japan); Shibasaki, K.; Tominaga, M. [Okazaki Institute for Integrative Bioscience, 5-1, Higashiyama, Myodaiji, Okazaki, 444-8787 (Japan); Utsumi, Y. [Laboratory of Advanced Science and Technology for Industry, University of Hyogo, 3-1-2, Koto, Kamigori, Ako-gun, Hyogo, 678-1205 (Japan); Gao, Y.L. [Department of Physics and Astronomy, Rochester University, Rochester, New York 14627 (United States); Urisu, T. [Graduate University for Advanced Studies, Myodaiji, Okazaki, 444-8585 (Japan); Institute for Molecular Science, Myodaiji, Okazaki, 444-8585 (Japan)], E-mail: urisu@ims.ac.jp

    2008-03-03

    The aim of this paper is to fabricate the planar type patch clamp ion-channel biosensor, which is suitable for the high throughput screening, using silicon-on-insulator (SOI) substrate. The micropore with 1.2 {mu}m diameter is formed through the top Si layer and the SiO{sub 2} box layer of the SOI substrate by focused ion beam (FIB). Then the substrate is assembled into the microfluidic circuit. The human embryonic kidney 293 (HEK-293) cell transfected with transient receptor potential vanilloid type 1 (TRPV1) is positioned on the micropore and the whole-cell configuration is formed by the suction. Capsaicin is added to the extracellular solution as a ligand molecule, and the channel current showing the desensitization unique to TRPV1 is measured successfully.

  13. Structure Dependence of Mode Edges in Photonic Crystal Waveguide with Silicon on Insulator

    Institute of Scientific and Technical Information of China (English)

    TANG Hai-Xia; ZUO Yu-Hua; YU Jin-Zhong; WANG Qi-Ming

    2006-01-01

    @@ The mode edges of photonic crystal waveguide with triangular lattice based on a silicon-on-insulator slab are investigated by combination of the effective index method and the two-dimensional plane wave expansion method.The variations of waveguide-mode edges with the structure parameters of photonic crystal are deduced. When the ratio of the radius of air holes to the lattice constant, r/Λ, is fixed and the lattice constant of photonic crystal,Λ, increases, the waveguide-mode edges shift to longer wavelengths. When Λ is fixed and r/Λ increases, the waveguide-mode edges shift to shorter wavelengths. Additionally, when r/Λ and Λ are both fixed, the radius of the two-row air holes adjacent to the waveguide increases, the waveguide-mode edges shift to shorter wavelengths.

  14. Hot-Electron Bolometer Mixers on Silicon-on-Insulator Substrates for Terahertz Frequencies

    Science.gov (United States)

    Skalare, Anders; Stern, Jeffrey; Bumble, Bruce; Maiwald, Frank

    2005-01-01

    A terahertz Hot-Electron Bolometer (HEB) mixer design using device substrates based on Silicon-On-Insulator (SOI) technology is described. This substrate technology allows very thin chips (6 pm) with almost arbitrary shape to be manufactured, so that they can be tightly fitted into a waveguide structure and operated at very high frequencies with only low risk for power leakages and resonance modes. The NbTiN-based bolometers are contacted by gold beam-leads, while other beamleads are used to hold the chip in place in the waveguide test fixture. The initial tests yielded an equivalent receiver noise temperature of 3460 K double-sideband at a local oscillator frequency of 1.462 THz and an intermediate frequency of 1.4 GHz.

  15. Laser ablation- and plasma etching-based patterning of graphene on silicon-on-insulator waveguides.

    Science.gov (United States)

    Van Erps, Jürgen; Ciuk, Tymoteusz; Pasternak, Iwona; Krajewska, Aleksandra; Strupinski, Wlodek; Van Put, Steven; Van Steenberge, Geert; Baert, Kitty; Terryn, Herman; Thienpont, Hugo; Vermeulen, Nathalie

    2015-10-05

    We present a new approach to remove monolayer graphene transferred on top of a silicon-on-insulator (SOI) photonic integrated chip. Femtosecond laser ablation is used for the first time to remove graphene from SOI waveguides, whereas oxygen plasma etching through a metal mask is employed to peel off graphene from the grating couplers attached to the waveguides. We show by means of Raman spectroscopy and atomic force microscopy that the removal of graphene is successful with minimal damage to the underlying SOI waveguides. Finally, we employ both removal techniques to measure the contribution of graphene to the loss of grating-coupled graphene-covered SOI waveguides using the cut-back method.

  16. Astable Oscillator Circuits using Silicon-on-Insulator Timer Chip for Wide Range Temperature Sensing

    Science.gov (United States)

    Patterson, Richard L.; Culley, Dennis; Hammoud, Ahmad; Elbuluk, Malik

    2008-01-01

    Two astable oscillator circuits were constructed using a new silicon-on-insulator (SOI) 555 timer chip for potential use as a temperature sensor in harsh environments encompassing jet engine and space mission applications. The two circuits, which differed slightly in configuration, were evaluated between -190 and 200 C. The output of each circuit was made to produce a stream of rectangular pulses whose frequency was proportional to the sensed temperature. The preliminary results indicated that both circuits performed relatively well over the entire test temperature range. In addition, after the circuits were subjected to limited thermal cycling over the temperature range of -190 to 200 C, the performance of either circuit did not experience any significant change.

  17. A Ratiometric Wavelength Measurement Based on a Silicon-on-Insulator Directional Coupler Integrated Device

    Directory of Open Access Journals (Sweden)

    Pengfei Wang

    2015-08-01

    Full Text Available A ratiometric wavelength measurement based on a Silicon-on-Insulator (SOI integrated device is proposed and designed, which consists of directional couplers acting as two edge filters with opposite spectral responses. The optimal separation distance between two parallel silicon waveguides and the interaction length of the directional coupler are designed to meet the desired spectral response by using local supermodes. The wavelength discrimination ability of the designed ratiometric structure is demonstrated by a beam propagation method numerically and then is verified experimentally. The experimental results have shown a general agreement with the theoretical models. The ratiometric wavelength system demonstrates a resolution of better than 50 pm at a wavelength around 1550 nm with ease of assembly and calibration.

  18. Development of the Pixelated Photon Detector Using Silicon on Insulator Technology for TOF-PET

    CERN Document Server

    Koyama, Akihiro; Takahashi, Hiroyuki; Orita, Tadashi; Arai, Yasuo; Kurachi, Ikuo; Miyoshi, Toshinobu; Nio, Daisuke; Hamasaki, Ryutaro

    2015-01-01

    To measure light emission pattern in scintillator, higher sensitivity and faster response are required to photo detector. Such as single photon avalanche diode (SPAD), conventional pixelated photo detector is operated at Geiger avalanche multiplication. However higher gain of SPAD seems very attractive, photon detection efficiency per unit area is low. This weak point is mainly caused by Geiger avalanche mechanism. To overcome these difficulties, we designed Pixelated Linear Avalanche Integration Detector using Silicon on Insulator technology (SOI-Plaid). To avoid dark count noise and dead time comes from quench circuit, we are planning to use APD in linear multiplication mode. SOI technology enables laminating readout circuit and APD layer, and high-speed and low-noise signal reading regardless smaller gain of linear APD. This study shows design of linear APD by using SOI fabrication process. We designed test element group (TEG) of linear APD and inspected optimal structure of linear APD.

  19. Crosstalk analysis of silicon-on-insulator nanowire-arrayed waveguide grating

    Science.gov (United States)

    Li, Kai-Li; An, Jun-Ming; Zhang, Jia-Shun; Wang, Yue; Wang, Liang-Liang; Li, Jian-Guang; Wu, Yuan-Da; Yin, Xiao-Jie; Hu, Xiong-Wei

    2016-12-01

    The factors influencing the crosstalk of silicon-on-insulator (SOI) nanowire arrayed waveguide grating (AWG) are analyzed using the transfer function method. The analysis shows that wider and thicker arrayed waveguides, outsider fracture of arrayed waveguide, and larger channel space, could mitigate the deterioration of crosstalk. The SOI nanowire AWGs with different arrayed waveguide widths are fabricated by using deep ultraviolet lithography (DUV) and inductively coupled plasma etching (ICP) technology. The measurement results show that the crosstalk performance is improved by about 7 dB through adopting 800 nm arrayed waveguide width. Project supported by the National High Technology Research and Development Program of China (Grant No. 2015AA016902), the National Natural Science Foundation of China (Grant Nos. 61274047, 61435013, 61307034, and 61405188), and the National Key Research and Development Program of China (Grant No. 2016YFB0402504).

  20. A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator

    Directory of Open Access Journals (Sweden)

    Denis E. Presnov

    2013-05-01

    Full Text Available Background: An experimental and theoretical study of a silicon-nanowire field-effect transistor made of silicon on insulator by CMOS-compatible methods is presented.Results: A maximum Nernstian sensitivity to pH change of 59 mV/pH was obtained experimentally. The maximum charge sensitivity of the sensor was estimated to be on the order of a thousandth of the electron charge in subthreshold mode.Conclusion: The sensitivity obtained for our sensor built in the CMOS-compatible top-down approach does not yield to the one of sensors built in bottom-up approaches. This provides a good background for the development of CMOS-compatible probes with primary signal processing on-chip.

  1. Impact of Free Carriers on Modulational Instability in Silicon-on-insulator Nanowaveguides

    CERN Document Server

    Chaturvedi, Deepa

    2016-01-01

    We have numerically studied the effect of free-carrier-induced loss and dispersion on the modulational instability (MI) gain at low input powers in silicon-on-insulator (SOI) nanowaveguides with normal and anomalous second-order dispersion. We have shown that the free carriers affect the gain spectra even at low input powers. First time we have reported the gain in normal SOI nanowaveguides even in the absence of higher order dispersion parameters, which is due to the interaction of free-carrier-induced dispersion and nonlinearity. The MI gain in an anomalous SOI nanowaveguide vanishes even at a few milliwatt range of input power due to this interaction. We have shown that the gain could be achieved in an anomalous nanowaveguides by reducing the free carrier lifetime.

  2. Nanophotonic devices on thin buried oxide Silicon-On-Insulator substrates

    CERN Document Server

    Sridaran, Suresh

    2009-01-01

    We demonstrate a silicon photonic platform using thin buried oxide silicon-on-insulator (SOI) substrates using localized substrate removal. We show high confinement silicon strip waveguides, micro-ring resonators and nanotapers using this technology. Propagation losses for the waveguides using the cutback method are 3.88 dB/cm for the quasi-TE mode and 5.06 dB/cm for the quasi-TM mode. Ring resonators with a loaded quality factor (Q) of 46,500 for the quasi-TM mode and intrinsic Q of 148,000 for the quasi-TE mode have been obtained. This process will enable the integration of photonic structures with thin buried oxide SOI based electronics.

  3. Thermo-optic Goos-Hänchen effect in silicon-on-insulator waveguide

    Science.gov (United States)

    Tang, Tingting; Luo, Li; Liu, Wenli; He, Xiujun; Zhang, Yanfen

    2015-09-01

    We study the thermo-optic Goos-Hänchen (TOGH) effect in a prism-waveguide coupling structure with silicon-on-insulator waveguide. Stationary-phase method is utilized to calculate the TOGH shift. When the waveguide is regarded as a two-dimensional planar waveguide, a nonlinear relation between GH shift and temperature is obtained. Based on the noticeable TOGH effect, a sensitive temperature modulator or sensor can be realized. As the waveguide width is limited, the proposed structure can be regarded as a three-dimensional rectangular waveguide. We explore the GH shift and TOGH effect for different modes propagating in rectangular waveguide which show different linear relations between GH shift and temperature, which can be used to design mode-selective device based on TO effect.

  4. Lithographically defined few-electron silicon quantum dots based on a silicon-on-insulator substrate

    Energy Technology Data Exchange (ETDEWEB)

    Horibe, Kosuke; Oda, Shunri [Department of Physical Electronics and Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552 (Japan); Kodera, Tetsuo, E-mail: kodera.t.ac@m.titech.ac.jp [Department of Physical Electronics and Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552 (Japan); Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan)

    2015-02-23

    Silicon quantum dot (QD) devices with a proximal single-electron transistor (SET) charge sensor have been fabricated in a metal-oxide-semiconductor structure based on a silicon-on-insulator substrate. The charge state of the QDs was clearly read out using the charge sensor via the SET current. The lithographically defined small QDs enabled clear observation of the few-electron regime of a single QD and a double QD by charge sensing. Tunnel coupling on tunnel barriers of the QDs can be controlled by tuning the top-gate voltages, which can be used for manipulation of the spin quantum bit via exchange interaction between tunnel-coupled QDs. The lithographically defined silicon QD device reported here is technologically simple and does not require electrical gates to create QD confinement potentials, which is advantageous for the integration of complicated constructs such as multiple QD structures with SET charge sensors for the purpose of spin-based quantum computing.

  5. Radio-Frequency Silicon-on-Insulator Modeling Considering the Neutral-Body Effect

    Science.gov (United States)

    Wang, Sheng-Chun; Su, Pin; Chen, Kun-Ming; Lin, Chien-Ting; Liang, Victor; Huang, Guo-Wei

    2008-04-01

    This paper presents small-signal modeling for state-of-the-art radio-frequency (RF) silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistors (MOSFETs). Especially, we have incorporated the neutral-body effect in our RF SOI model. This effect is significant in both RF extrinsic and intrinsic modeling stages. In addition, we have developed a physically-accurate parameter extraction method based on our analytical expressions. Our modeling results agree well with the measured data and can capture the frequency dependences of both output conductance and capacitance in the GHz frequency region. The anomalous S22 and S21 behaviors as well as the output conductance rising effect observed in our measurements can be predicted and described using the proposed model.

  6. Study of Pixel Area Variations in Fully Depleted Thick CCD

    Energy Technology Data Exchange (ETDEWEB)

    Kotov, I.V.; O' Connor, P.; Kotov, A.I.; Frank, J.; Kubanek, P.; Prouza, M.; Radeka, V.; Takacs, P.

    2010-06-30

    Future wide field astronomical surveys, like Large Synoptic Survey Telescope (LSST), require photometric precision on the percent level. The accuracy of sensor calibration procedures should match these requirements. Pixel size variations found in CCDs from different manufacturers are the source of systematic errors in the flat field calibration procedure. To achieve the calibration accuracy required to meet the most demanding science goals this effect should be taken into account. The study of pixel area variations was performed for fully depleted, thick CCDs produced in a technology study for LSST. These are n-channel, 100 {micro}m thick devices. We find pixel size variations in both row and column directions. The size variation magnitude is smaller in the row direction. In addition, diffusion is found to smooth out electron density variations. It is shown that the characteristic diffusion width can be extracted from the flat field data. Results on pixel area variations and diffusion, data features, analysis technique and modeling technique are presented and discussed.

  7. Evaluation of Silicon-on-Insulator HTOP-01 Operational Amplifier for Wide Temperature Operation

    Science.gov (United States)

    Patterson, Richard; Hammoud, Ahmad; Elbuluk, Malik

    2008-01-01

    Electronics capable of operation under extreme temperatures are required in many of NASA space exploration missions. Aerospace and military applications, as well as some terrestrial industries constitute environments where electronic systems are anticipated to be exposed to extreme temperatures and wide-range thermal swings. Electronics that are able to withstand and operate efficiently in such harsh environments would simplify, if not eliminate, traditional thermal control elements and their associated structures for proper ambient operation. As a result, overall system mass would be reduced, design would be simplified, and reliability would be improved. Electronic parts that are built utilizing silicon-on-insulator (SOI) technology are known to offer better radiation-tolerance compared to their conventional silicon counterparts, provide faster switching, and consume less power. They also exhibit reduced leakage current and, thus, they are often tailored for high temperature operation. These attributes make SOI-based devices suitable for use in harsh environments where extreme temperatures and wide thermal swings are anticipated. A new operational amplifier, based on silicon-on-insulator technology and geared for high temperature well-logging applications, was recently introduced by Honeywell Corporation. This HTOP-01 dual precision operational amplifier is a low power device, operates on a single supply, and has an internal oscillator and an external clocking option [1]. It is rated for operation from -55 C to +225 C with a maximum output current capability of 50 mA. The amplifier chip is designed as a 14-pin, hermetically-sealed device in a ceramic package. Table I shows some of the device manufacturer s specifications.

  8. Characterization of the influence of strain on the optical properties of waveguides and microresonators in silicon-on-insulator technology

    NARCIS (Netherlands)

    Westerveld, W.J.; Harmsma, P.J.; Schmits, R.; Tabak, E.; Pozo Torres, J.M.; Urbach, H.P.; Yousefi, M.

    2011-01-01

    Silicon-on-insulator (SOI) technology has become one of the focus platforms for photonic integrated circuits (PICs). The CMOS technology opens the possibility for reliable mass fabrication of cost-effective photonic circuits. Recently there has been a growing interest in direct optical sensing of, f

  9. A Two-Dimensional Photonic Crystal Slab Mirror with Silicon on Insulator for Wavelength 1.3μm

    Institute of Scientific and Technical Information of China (English)

    TANG Hai-Xia; ZUO Yu-Hua; YU Jin-Zhong; WANG Qi-Ming

    2006-01-01

    @@ A concrete two-dimensional photonic crystal slab with triangular lattice used as a mirror for the light at wavelength 1.3μm with a silicon-on-insulator (SOI) substrate is designed by the three-dimensional plane wave expansion method.

  10. Optical microcavities based on surface modes in two-dimensional photonic crystals and silicon-on-insulator photonic crystals

    DEFF Research Database (Denmark)

    Xiao, Sanshui; Qiu, M.

    2007-01-01

    Surface-mode optical microcavities based on two-dimensional photonic crystals and silicon-on-insulator photonic crystals are studied. We demonstrate that a high-quality-factor microcavity can be easily realized in these structures. With an increasing of the cavity length, the quality factor is gr...

  11. Silicon-on-insulator-based complementary metal oxide semiconductor integrated optoelectronic platform for biomedical applications

    Science.gov (United States)

    Mujeeb-U-Rahman, Muhammad; Scherer, Axel

    2016-12-01

    Microscale optical devices enabled by wireless power harvesting and telemetry facilitate manipulation and testing of localized biological environments (e.g., neural recording and stimulation, targeted delivery to cancer cells). Design of integrated microsystems utilizing optical power harvesting and telemetry will enable complex in vivo applications like actuating a single nerve, without the difficult requirement of extreme optical focusing or use of nanoparticles. Silicon-on-insulator (SOI)-based platforms provide a very powerful architecture for such miniaturized platforms as these can be used to fabricate both optoelectronic and microelectronic devices on the same substrate. Near-infrared biomedical optics can be effectively utilized for optical power harvesting to generate optimal results compared with other methods (e.g., RF and acoustic) at submillimeter size scales intended for such designs. We present design and integration techniques of optical power harvesting structures with complementary metal oxide semiconductor platforms using SOI technologies along with monolithically integrated electronics. Such platforms can become the basis of optoelectronic biomedical systems including implants and lab-on-chip systems.

  12. Mode hybridization and conversion in silicon-on-insulator nanowires with angled sidewalls.

    Science.gov (United States)

    Dai, Daoxin; Zhang, Ming

    2015-12-14

    The mode property and light propagation in a tapered silicon-on-insulator (SOI) nanowire with angled sidewalls is analyzed. Mode hybridization is observed and mode conversion between the TM fundamental mode and higher-order TE modes happens when light propagates in a waveguide taper which is used very often in the design of photonic integrated devices. This mode conversion ratio is possible to be very high (even close to 100%) when the taper is long enough to be adiabatic, which might be useful for some applications of multimode photonics. When the mode conversion is undesired to avoid any excess loss as well as crosstalk for photonic integrated circuits, one can depress the mode conversion by compensating the vertical asymmetry in the way of reducing the sidewall angle or introducing an optimal refractive index for the upper-cladding. It is also possible to eliminate the undesired mode conversion almost and improve the desired mode conversion greatly by introducing an abrupt junction connecting two sections with different widths to jump over the mode hybridization region.

  13. Design for beam splitting components employing silicon-on-insulator rib waveguide structures.

    Science.gov (United States)

    Hsiao, C S; Wang, Likarn

    2005-12-01

    We present a new design for beam splitting components employing a silicon-on-insulator rib waveguide structures. In the new design, a high-index thin-film layer is deposited in the rib section to reduce the wave field dispersive tails in the slab section and accordingly render the mode field a confined spot. This in turn improves the beam splitting performance of some conventional waveguide components such as y branches and multimode interference couplers (MMICs), in terms of the excess loss, fiber coupling loss, and compactness of these components. For a 1 x 2 y-branch beam splitter, the excess loss can be as small as 0.43 dB in the new design, which is much lower than that for a conventional rib waveguide structure (which is 1.28 dB). For a 1 x 2 MMIC in our example, the new rib waveguide structure presents an excess loss of 0.064 dB for the TE mode and 0.046 dB for the TM mode, with negligible nonuniformity in dimensions of 30 microm x 1040 microm, whereas its counterpart (i.e., the one with the same dimensions but without a thin-film layer) presents an excess loss of approximately 0.86 dB for both modes. A conventional MMIC must have dimensions larger than 70 microm x 5650 microm to maintain almost the same low excess loss.

  14. A Temperature Sensor using a Silicon-on-Insulator (SOI) Timer for Very Wide Temperature Measurement

    Science.gov (United States)

    Patterson, Richard L.; Hammoud, Ahmad; Elbuluk, Malik; Culley, Dennis E.

    2008-01-01

    A temperature sensor based on a commercial-off-the-shelf (COTS) Silicon-on-Insulator (SOI) Timer was designed for extreme temperature applications. The sensor can operate under a wide temperature range from hot jet engine compartments to cryogenic space exploration missions. For example, in Jet Engine Distributed Control Architecture, the sensor must be able to operate at temperatures exceeding 150 C. For space missions, extremely low cryogenic temperatures need to be measured. The output of the sensor, which consisted of a stream of digitized pulses whose period was proportional to the sensed temperature, can be interfaced with a controller or a computer. The data acquisition system would then give a direct readout of the temperature through the use of a look-up table, a built-in algorithm, or a mathematical model. Because of the wide range of temperature measurement and because the sensor is made of carefully selected COTS parts, this work is directly applicable to the NASA Fundamental Aeronautics/Subsonic Fixed Wing Program--Jet Engine Distributed Engine Control Task and to the NASA Electronic Parts and Packaging (NEPP) Program. In the past, a temperature sensor was designed and built using an SOI operational amplifier, and a report was issued. This work used an SOI 555 timer as its core and is completely new work.

  15. Arbitrary coupling ratio multimode interference couplers in Silicon-on-Insulator

    CERN Document Server

    Doménech, José David; Gargallo, Bernardo; Muñoz, Pascual

    2014-01-01

    In this paper we present the design, manufacturing, characterization and analysis of the coupling ratio spectral response for Multimode Interference (MMI) couplers in Silicon-on-Insulator (SOI) technology. The couplers were designed using a Si rib waveguide with SiO 2 cladding, on a regular 220 nm film and 2 {\\mu}m buried oxide SOI wafer. A set of eight different designs, three canonical and five using a widened/narrowed coupler body, have been subject of study, with coupling ratios 50:50, 85:15 and 72:28 for the former, and 95:05, 85:15, 75:25, 65:35 and 55:45 for the latter. Two wafers of devices were fabricated, using two different etch depths for the rib waveguides. A set of six dies, three per wafer, whose line metrology matched the design, were retained for characterization. The coupling ratios obtained in the experimental results match, with little deviations, the design targets for a wavelength range between 1525 and 1575 nm, as inferred from spectral measurements and statistical analyses. Excess loss...

  16. Integrated optical phased array based large angle beam steering system fabricated on silicon-on-insulator

    Science.gov (United States)

    Kwong, David N.; Zhang, Yang; Hosseini, Amir; Chen, Ray T.

    2011-01-01

    In this paper, we present a highly compact silicon nano-membrane based optical phased array fabricated using conventional CMOS processing on silicon-on-insulator that provides for over 10 degrees of beam steering in a silicon slab at λ=1.55μm using transverse-electrical polarized light. A low loss 1-to-12 multi-mode interference (MMI) optical beam splitter with high uniformity is used to provide inputs to the optical phased array. Using an unequally spaced waveguide array permits us to relax the half-wavelength spacing requirement for large angle beam steering, thereby avoiding the optical coupling between adjacent waveguides and reducing the side-lobe-level of the array radiation pattern. S-bend waveguides convert the equally spaced MMI output to the unequally spaced wave guide array, while passively equalizing the phases of each array element to compensate for the MMI output phase profile. Independently controllable thin film metal heaters are used to achieve phase shifting using the strong thermo-optic response of silicon. Heat-insulating air grooves minimize thermal crosstalk, while also achieving and low power consumption.

  17. Defect-mediated resonance shift of silicon-on-insulator racetrack resonators.

    Science.gov (United States)

    Ackert, J J; Doylend, J K; Logan, D F; Jessop, P E; Vafaei, R; Chrostowski, L; Knights, A P

    2011-06-20

    We present a study on the effects of inert ion implantation of Silicon-On-Insulator (SOI) racetrack resonators. Selective ion implantation was used to create deep-level defects within a portion of the resonator. The resonant wavelength and round-trip loss were deduced for a range of sequential post-implantation annealing temperatures from 100 to 300 °C. As the devices were annealed there was a concomitant change in the resonance wavelength, consistent with an increase in refractive index following implantation and recovery toward the pre-implanted value. A total shift in resonance wavelength of ~2.9 nm was achieved, equivalent to a 0.02 increase in refractive index. The excess loss upon implantation increased to 301 dB/cm and was reduced to 35 dB/cm following thermal annealing. In addition to providing valuable data for those incorporating defects within resonant structures, we suggest that these results present a method for permanent tuning (or trimming) of ring resonator characteristics.

  18. Space and military radiation effects in silicon-on-insulator devices

    Energy Technology Data Exchange (ETDEWEB)

    Schwank, J.R.

    1996-09-01

    Advantages in transient ionizing and single-event upset (SEU) radiation hardness of silicon-on-insulator (SOI) technology spurred much of its early development. Both of these advantages are a direct result of the reduced charge collection volume inherent to SOI technology. The fact that SOI transistor structures do not include parasitic n-p-n-p paths makes them immune to latchup. Even though considerable improvement in transient and single-event radiation hardness can be obtained by using SOI technology, there are some attributes of SOI devices and circuits that tend to limit their overall hardness. These attributes include the bipolar effect that can ultimately reduce the hardness of SOI ICs to SEU and transient ionizing radiation, and charge buildup in buried and sidewall oxides that can degrade the total-dose hardness of SOI devices. Nevertheless, high-performance SOI circuits can be fabricated that are hardened to both space and nuclear radiation environments, and radiation-hardened systems remain an active market for SOI devices. The effects of radiation on SOI MOS devices are reviewed.

  19. Atomically flattening of Si surface of silicon on insulator and isolation-patterned wafers

    Science.gov (United States)

    Goto, Tetsuya; Kuroda, Rihito; Akagawa, Naoya; Suwa, Tomoyuki; Teramoto, Akinobu; Li, Xiang; Obara, Toshiki; Kimoto, Daiki; Sugawa, Shigetoshi; Ohmi, Tadahiro; Kamata, Yutaka; Kumagai, Yuki; Shibusawa, Katsuhiko

    2015-04-01

    By introducing high-purity and low-temperature Ar annealing at 850 °C, atomically flat Si surfaces of silicon-on-insulator (SOI) and shallow-trench-isolation (STI)-patterned wafers were obtained. In the case of the STI-patterned wafer, this low-temperature annealing and subsequent radical oxidation to form a gate oxide film were introduced into the complementary metal oxide semiconductor (CMOS) process with 0.22 µm technology. As a result, a test array circuit for evaluating the electrical characteristics of a very large number (>260,000) of metal oxide semiconductor field effect transistors (MOSFETs) having an atomically flat gate insulator/Si interface was successfully fabricated on a 200-mm-diameter wafer. By evaluating 262,144 nMOSFETs, it was found that not only the gate oxide reliability was improved, but also the noise amplitude of the gate-source voltage related to the random telegraph noise (RTN) was reduced owing to the introduction of the atomically flat gate insulator/Si interface.

  20. Study and simulation for the sharp-corner of silicon-on-insulator waveguides

    Science.gov (United States)

    Sun, De-Gui; Li, Xiaoqi; Wong, Dongxia; Hall, Trevor

    2008-04-01

    The semiconductor industry appears to be encouraging the photonic industry to make highly integrated low-cost optical systems. Planar lightwave circuit (PLC) technology is widely accepted for manufacturing photonic components and Silicon-on-insulator (SOI) waveguides have attracted much research for implementing the highly integrated PLC-based devices. In this work, starting with the guided-mode conversion process and the principle of transportation waves, we mathematically model the structure of corner mirrors of SOI waveguides with a model of effective reflecting interface (ERI). Then we simulate the transfer efficiencies with FDTD method and testify the simulation results with commercial FDTD software tool. Further, we analyze the simulation results and conclude that the conversion efficiency of a corner mirror is determined by several parameters including the geometrical structure, the index-difference of waveguide-reflector materials and the roughness of waveguide-reflector interface. For the corner structure from 90-120°, the optimal transfer efficiency can be achieved more than 98% and the access loss is less than 0.1 dB if the scattering loss of waveguide is not taken into account, but they become 95% and 0.2 dB if the scattering loss is taken into account. For some important PLC components, the deflection angle of 90-120° is good enough for implementing the compact design of highly integrated PLC-based devices.

  1. Integrated Active Magnetic Probe in Silicon-on-Insulator Complementary Metal-Oxide-Semiconductor Technology

    Science.gov (United States)

    Aoyama, Satoshi; Kawahito, Shoji; Yamaguchi, Masahiro

    2006-09-01

    A novel magnetic probe has been designed and fabricated by 0.15 μm five-metal (4M + thick metal) silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology to achieve both a high sensitivity and a high spatial resolution. A detecting coil having metal multilayers, a two-stage differential amplifier, a differential-to-single-ended converter, and an output buffer are integrated on a single chip. The probe is referred to as an active probe, and it has a feature to distinguish magnetic field from detected electromagnetic emissions by means of a two-turn differential coil structure and a circuit technique using a wideband differential-to-single-ended converter with a high common-mode rejection. Measurement results show the effectiveness of the active magnetic probe with the function of on-chip amplification and electric field suppression, as well as electrical switching with common-mode voltage (Vcom). Moreover, for the first time, a magnetic field distribution is visualized with an active probe.

  2. Ultrafast, green third-harmonic generation and strong-field phenomena in silicon-on-insulator nanoplasmonic waveguides

    OpenAIRE

    Sederberg, Shawn; Elezzabi, Abdulhakem Y.

    2013-01-01

    The emergence of strong-field nanoplasmonics brings extreme laser field-matter interaction into the realm of nanoscale science, unveiling exciting new physics. Highly nonlinear interaction is enabled by tightly confined electric fields in nanoplasmonic structures, permitting use of optical fields from low-power laser oscillators. Here, we report the first demonstration of visible 517nm third harmonic generation in ultracompact nanoplasmonic waveguides on a silicon-on-insulator platform at an ...

  3. Design and fabrication of sub-μs silicon-on-insulator thermo-optic 4×4 switch matrix

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    A rearrangeable nonblocking silicon-on-insulator-based thermo-optic 4×4 switch matrix with spot size converters (SSCs) and a new driving circuit are designed and fabricated. The introduction of a spot size converter (SSC) has decreased the insertion loss to less than 10dB and the new driving circuit has improved the response speed to less than 1μs.

  4. Optical microcavities based on surface modes in two-dimensional photonic crystals and silicon-on-insulator photonic crystals

    DEFF Research Database (Denmark)

    Xiao, Sanshui; Qiu, M.

    2007-01-01

    Surface-mode optical microcavities based on two-dimensional photonic crystals and silicon-on-insulator photonic crystals are studied. We demonstrate that a high-quality-factor microcavity can be easily realized in these structures. With an increasing of the cavity length, the quality factor...... is gradually enhanced and the resonant frequency converges to that of the corresponding surface mode in the photonic crystals. These structures have potential applications such as sensing....

  5. Fully depleted CMOS pixel sensor development and potential applications

    Energy Technology Data Exchange (ETDEWEB)

    Baudot, J.; Kachel, M. [Universite de Strasbourg, IPHC, 23 rue du Loess 67037 Strasbourg (France); CNRS, UMR7178, 67037 Strasbourg (France)

    2015-07-01

    CMOS pixel sensors are often opposed to hybrid pixel sensors due to their very different sensitive layer. In standard CMOS imaging processes, a thin (about 20 μm) low resistivity epitaxial layer acts as the sensitive volume and charge collection is mostly driven by thermal agitation. In contrast, the so-called hybrid pixel technology exploits a thick (typically 300 μm) silicon sensor with high resistivity allowing for the depletion of this volume, hence charges drift toward collecting electrodes. But this difference is fading away with the recent availability of some CMOS imaging processes based on a relatively thick (about 50 μm) high resistivity epitaxial layer which allows for full depletion. This evolution extents the range of applications for CMOS pixel sensors where their known assets, high sensitivity and granularity combined with embedded signal treatment, could potentially foster breakthrough in detection performances for specific scientific instruments. One such domain is the Xray detection for soft energies, typically below 10 keV, where the thin sensitive layer was previously severely impeding CMOS sensor usage. Another application becoming realistic for CMOS sensors, is the detection in environment with a high fluence of non-ionizing radiation, such as hadron colliders. However, when considering highly demanding applications, it is still to be proven that micro-circuits required to uniformly deplete the sensor at the pixel level, do not mitigate the sensitivity and efficiency required. Prototype sensors in two different technologies with resistivity higher than 1 kΩ, sensitive layer between 40 and 50 μm and featuring pixel pitch in the range 25 to 50 μm, have been designed and fabricated. Various biasing architectures were adopted to reach full depletion with only a few volts. Laboratory investigations with three types of sources (X-rays, β-rays and infrared light) demonstrated the validity of the approach with respect to depletion, keeping a

  6. A new analytical model of high voltage silicon on insulator (SOI) thin film devices

    Institute of Scientific and Technical Information of China (English)

    Hu Sheng-Dong; Zhang Bo; Li Zhao-Ji

    2009-01-01

    A new analytical model of high voltage silicon on insulator (SOI) thin film devices is proposed, and a formula of silicon critical electric field is derived as a function of silicon film thickness by solving a 2D Poisson equation from an effective ionization rate, with a threshold energy taken into account for electron multiplying. Unlike a conventional silicon critical electric field that is constant and independent of silicon film thickness, the proposed silicon critical electric field increases sharply with silicon film thickness decreasing especially in the case of thin films, and can come to 141 V/μm at a film thickness of 0.1 μm which is much larger than the normal value of about 30 V/μm. From the proposed formula of silicon critical electric field, the expressions of dielectric layer electric field and vertical breakdown voltage (VB,V) are obtained. Based on the model, an ultra thin film can be used to enhance dielectric layer electric field and so increase vertical breakdown voltage for SOI devices because of its high silicon critical electric field, and with a dielectric layer thickness of 2 μm the vertical breakdown voltages reach 852 and 300V for the silicon film thicknesses of 0.1 and 5μm, respectively. In addition, a relation between dielectric layer thickness and silicon film thickness is obtained, indicating a minimum vertical breakdown voltage that should be avoided when an SOI device is designed. 2D simulated results and some experimental results are in good agreement with analytical results.

  7. Silicon based tunneling devices combined with silicon-on-insulator for ultra-large-scale integration

    Science.gov (United States)

    Aydin, Cagri

    2005-07-01

    The continuing device miniaturization in silicon technology to the nanoscale regime opens new avenues for Si-integrable quantum tunneling devices. This thesis describes our study of three novel Si-based tunneling devices: The multiemitter tunneling heterojunction bipolar transistor (MT-HBT), the lateral interband tunneling transistor (LITT) and the ultrathin silicon-on-insulator (SOI) vertical tunneling transistor (VTT). In the Si/SiGe npn MT-HBT, interband tunneling in a heavily doped, reverse biased emitter-base junction supplies the controlling current, while the other forward biased emitter injects the collector current. Despite the lack of a true base contact, the device operates as a normal HBT with high current gain, and the emitter symmetry leads to logic functionality in a single device. Interband tunneling in silicon, which has an indirect bandgap, requires momentum transfer from either phonons or impurities and is not well understood---our devices provide an experimental testbed for existing theory. Interband tunneling is, again, the underlying principle of our LITT devices, where the source and drain form a heavily-doped lateral pn junction in a thin Si film on an SOI substrate. We observe control of the reverse-bias tunneling current under drain bias by a gate voltage of either bias polarity. Systematic current-voltage measurements, together with numerical device simulations, show that in first approximation the drain current depends on the maximum junction electric field. The VTT in SOI is a resonant tunneling device in a transistor geometry: carriers tunnel from the doped gate through an ultrathin gate oxide into the Si quantum well channel and are extracted laterally. The devices show good transistor characteristics when operated in standard transistor mode, and backgate modulation of the tunneling current when operated in the vertical tunneling mode at low temperature. In particular, we observe structure in the gate current due to resonant

  8. Solar thermoelectric generators fabricated on a silicon-on-insulator substrate

    Science.gov (United States)

    de Leon, Maria Theresa; Chong, Harold; Kraft, Michael

    2014-08-01

    Solar thermal power generation is an attractive electricity generation technology as it is environment-friendly, has the potential for increased efficiency, and has high reliability. The design, modelling, and evaluation of solar thermoelectric generators (STEGs) fabricated on a silicon-on-insulator substrate are presented in this paper. Solar concentration is achieved by using a focusing lens to concentrate solar input onto the membrane of the STEG. A thermal model is developed based on energy balance and heat transfer equations using lumped thermal conductances. This thermal model is shown to be in good agreement with actual measurement results. For a 1 W laser input with a spot size of 1 mm, a maximum open-circuit voltage of 3.06 V is obtained, which translates to a temperature difference of 226 °C across the thermoelements and delivers 25 µW of output power under matched load conditions. Based on solar simulator measurements, a maximum TEG voltage of 803 mV was achieved by using a 50.8 mm diameter plano-convex lens to focus solar input to a TEG with a length of 1000 µm, width of 15 µm, membrane diameter of 3 mm, and 114 thermocouples. This translates to a temperature difference of 18 °C across the thermoelements and an output power under matched load conditions of 431 nW. This paper demonstrates that by utilizing a solar concentrator to focus solar radiation onto the hot junction of a TEG, the temperature difference across the device is increased; subsequently improving the TEG’s efficiency. By using materials that are compatible with standard CMOS and MEMS processes, integration of solar-driven TEGs with on-chip electronics is seen to be a viable way of solar energy harvesting where the resulting microscale system is envisioned to have promising applications in on-board power sources, sensor networks, and autonomous microsystems.

  9. Extreme High and Low Temperature Operation of the Silicon-On-Insulator Type CHT-OPA Operational Amplifier

    Science.gov (United States)

    Patterson, Richard; Hammoud, Ahmad; Elbuluk, Malik

    2008-01-01

    A new operational amplifier chip based on silicon-on-insulator technology was evaluated for potential use in extreme temperature environments. The CHT-OPA device is a low power, precision operational amplifier with rail-to-rail output swing capability, and it is rated for operation between -55 C and +225 C. A unity gain inverting circuit was constructed utilizing the CHT-OPA chip and a few passive components. The circuit was evaluated in the temperature range from -190 C to +200 C in terms of signal gain and phase shift, and supply current. The investigations were carried out to determine suitability of this device for use in space exploration missions and aeronautic applications under wide temperature incursion. Re-restart capability at extreme temperatures, i.e. power switched on while the device was soaked at extreme temperatures, was also investigated. In addition, the effects of thermal cycling under a wide temperature range on the operation of this high performance amplifier were determined. The results from this work indicate that this silicon-on-insulator amplifier chip maintained very good operation between +200 C and -190 C. The limited thermal cycling had no effect on the performance of the amplifier, and it was able to re-start at both -190 C and +200 C. In addition, no physical degradation or packaging damage was introduced due to either extreme temperature exposure or thermal cycling. The good performance demonstrated by this silicon-on-insulator operational amplifier renders it a potential candidate for use in space exploration missions or other environments under extreme temperatures. Additional and more comprehensive characterization is, however, required to establish the reliability and suitability of such devices for long term use in extreme temperature applications.

  10. Design and analysis of polarization independent all-optical logic gates in silicon-on-insulator photonic crystal

    Science.gov (United States)

    Rani, Preeti; Kalra, Yogita; Sinha, R. K.

    2016-09-01

    In this paper, we have reported design and analysis of polarization independent all optical logic gates in silicon-on-insulator photonic crystal consisting of two dimensional honeycomb lattices with two different air holes exhibiting photonic band gap for both TE and TM mode in the optical communication window. The proposed structures perform as an AND optical logic gate and all the optical logic gates based on the phenomenon of interference. The response period and bit rate for TE and TM polarizations at a wavelength of 1.55 μm show improved results as reported earlier.

  11. Stimulated and spontaneous four-wave mixing in silicon-on-insulator coupled photonic wire nano-cavities

    Science.gov (United States)

    Azzini, Stefano; Grassani, Davide; Galli, Matteo; Gerace, Dario; Patrini, Maddalena; Liscidini, Marco; Velha, Philippe; Bajoni, Daniele

    2013-07-01

    We report on four-wave mixing in coupled photonic crystal nano-cavities on a silicon-on-insulator platform. Three photonic wire cavities are side-coupled to obtain three modes equally separated in energy. The structure is designed to be self-filtering, and we show that the pump is rejected by almost two orders of magnitude. We study both the stimulated and the spontaneous four-wave mixing processes: owing to the small modal volume, we find that signal and idler photons are generated with a hundred-fold increase in efficiency as compared to silicon micro-ring resonators.

  12. Compact wavelength router based on a Silicon-on-insulator arrayed waveguide grating pigtailed to a fiber array.

    Science.gov (United States)

    Dumon, P; Bogaerts, W; Van Thourhout, D; Taillaert, D; Baets, R; Wouters, J; Beckx, S; Jaenen, P

    2006-01-23

    We demonstrate a compact, fiber-pigtailed, 4-by-4 wavelength router in Silicon-on-insulator photonic wires, fabricated using CMOS processing methods. The core is an AWG with a 250GHz channel spacing and 1THz free spectral range, on a 425x155 microm(2) footprint. The insertion loss of the AWG was reduced to 3.5dB by applying a two-step processing technique. The crosstalk is -12dB. The device was pigtailed using vertical fiber couplers and an eight-fiber array connector.

  13. A Silicon-on-Insulator-Based Thermo-Optic Waveguide Switch with Low Insertion Loss and Fast Response

    Institute of Scientific and Technical Information of China (English)

    LI Yan-Ping; YU Jin-Zhong; CHEN Shao-Wu

    2005-01-01

    @@ A silicon-on-insulator-based thermo-optic waveguide switch integrated with spot size converters is designed and fabricated by inductively coupled plasma reactive ion etching. The device shows good characteristics, including low insertion loss of 8 ± 1 dB for wavelength 1530-1580nm and fast response times of 4.6 μs for rising edge and 1.9μs for falling edge. The extinction ratios of the two channels are 19.1 and 18 dB, respectively.

  14. Mach-Zehnder Interferometers with Asymmetric Modulation Arms in Applications of High Speed Silicon-on-Insulator Based Optical Switches

    Institute of Scientific and Technical Information of China (English)

    SUN Fei; YU Jin-Zhong

    2006-01-01

    @@ Modulation arms with different widths are introduced to Mach-Zehnder interferometers (MZIs) to obtain improved performance. Theoretical analysis and numerical simulation have shown that when the widths of the two arms are properly designed to achieve an inherent mπ/2 (m is an odd integer) optical phase difference between the arms, the asymmetric MZI presents higher modulation speed. Furthermore, the carrier-absorption induced divergence of insertion losses in silicon-on-insulator (SOI) based MZI optical switches can be obviously improved.

  15. Stimulated and spontaneous four-wave mixing in silicon-on-insulator coupled photonic wire nano-cavities

    OpenAIRE

    Azzini, Stefano; Grassani, Davide; Galli, Matteo; Gerace,Dario; Patrini, Maddalena; Liscidini, Marco; Velha, Philippe; Bajoni, Daniele

    2013-01-01

    We report on four-wave mixing in coupled photonic crystal nano-cavities on a silicon-on-insulator platform. Three photonic wire cavities are side-coupled to obtain three modes equally separated in energy. The structure is designed to be self-filtering, and we show that the pump is rejected by almost two orders of magnitudes. We study both the stimulated and the spontaneous four-wave mixing processes: owing to the small modal volume, we find that signal and idler photons are generated with a h...

  16. High Speed Signal Wavelength Conversion Using Stimulated Raman Effect in Ultrasmall Silicon-on-Insulator Optical Waveguides

    Institute of Scientific and Technical Information of China (English)

    WU Jian-Wei; LUO Feng-Guang; GALLEP Cristiano de Mello

    2008-01-01

    We propose the high speed signal wavelength conversion based on stimulated Raman effect on silicon waveguides.Simulation results of non-return-to-zero(NRZ)pseudorandom bit sequence(27-1 code)at 500-Gb/s rate of conversion in an ultrasmall silicon-on-insulator(SOI)optical wavegnide are presented by co-propagating pump optical field.The most attractive issue is that the inverted converted signal can be obtained at the same wavelength as that of primary signal.In addition,the conversion performances,including extinction ratio(ER)and average peak power of conversion signal,depend strongly on the launching pump intensity.

  17. Stimulated and spontaneous four-wave mixing in silicon-on-insulator coupled photonic wire nano-cavities

    OpenAIRE

    Azzini, Stefano; Grassani, Davide; Galli, Matteo; Gerace, Dario; Patrini, Maddalena; Liscidini, Marco; Velha, Philippe; Bajoni, Daniele

    2013-01-01

    We report on four-wave mixing in coupled photonic crystal nano-cavities on a silicon-on-insulator platform. Three photonic wire cavities are side-coupled to obtain three modes equally separated in energy. The structure is designed to be self-filtering, and we show that the pump is rejected by almost two orders of magnitudes. We study both the stimulated and the spontaneous four-wave mixing processes: owing to the small modal volume, we find that signal and idler photons are generated with a h...

  18. Substrate bias effects on collector resistance in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator

    Institute of Scientific and Technical Information of China (English)

    Xu Xiao-Bo; Zhang He-Ming; Hu Hui-Yong; Qu Jiang-Tao

    2011-01-01

    An analytical expression for the collector resistance of a novel vertical SiGe heteroj unction bipolar transistor (HBT)on thin film silicon-on-insulator (SOI) is obtained with the substrate bias effects being considered. The resistance is found to decrease slowly and then quickly and to have kinks with the increase of the substrate-collector bias, which is quite different from that of a conventional bulk HBT. The model is consistent with the simulation result and the reported data and is useful to the frequency characteristic design of 0.13 μm millimeter-wave SiGe SOI BiCMOS devices.

  19. Design and fabrication of a planar patch-clamp substrate using a silicon-on-insulator wafer

    Science.gov (United States)

    Zhenlong, Zhang; Xiangyang, Liu; Yanli, Mao

    2009-09-01

    The planar patch-clamp technique has been applied to high throughput screening in drug discovery. The key feature of this technique is the fabrication of a planar patch-clamp substrate using appropriate materials. In this study, a planar patch-clamp substrate was designed and fabricated using a silicon-on-insulator (SOI) wafer. The access resistance and capacitance of SOI-based planar patch-clamp substrates are smaller than those of bulk silicon-based planar substrates, which will reduce the distributed RC noise.

  20. Fully-depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon

    Energy Technology Data Exchange (ETDEWEB)

    Holland, Stephen E.; Groom, Donald E.; Palaio, Nick P.; Stover, Richard J.; Wei, Mingzhi

    2002-03-28

    Charge-coupled devices (CCD's) have been fabricated on high-resistivity silicon. The resistivity, on the order of 10,000 {Omega}-cm, allows for depletion depths of several hundred microns. Fully-depleted, back-illuminated operation is achieved by the application of a bias voltage to a ohmic contact on the wafer back side consisting of a thin in-situ doped polycrystalline silicon layer capped by indium tin oxide and silicon dioxide. This thin contact allows for good short wavelength response, while the relatively large depleted thickness results in good near-infrared response.

  1. Body factor conscious modeling of single gate fully depleted SOI MOSFETs for low power applications

    Science.gov (United States)

    Kumar, Anil; Nagumo, Toshiharu; Tsutsui, Gen; Ohtou, Tetsu; Hiramoto, Toshiro

    2005-06-01

    Degradation of body factor (γ) and subthreshold factor (S) of single gate fully depleted SOI MOSFETs due to short channel effects has been studied analytically. The effect of source/drain fringing fields in buried oxide is found to play a more significant role in the reduction of body factor at smaller gate lengths. Present work provides the analytical expressions of effective back gate voltage, body factor and subthreshold factor of short channel fully depleted SOI MOSFETs. The results obtained are found in good approximation with 2D simulation.

  2. Estimation of background carrier concentration in fully depleted GaN films

    Science.gov (United States)

    Chandrasekar, Hareesh; Singh, Manikant; Raghavan, Srinivasan; Bhat, Navakanta

    2015-11-01

    Buffer leakage is an important parasitic loss mechanism in AlGaN/GaN high electron mobility transistors (HEMTs) and hence various methods are employed to grow semi-insulating buffer layers. Quantification of carrier concentration in such buffers using conventional capacitance based profiling techniques is challenging due to their fully depleted nature even at zero bias voltages. We provide a simple and effective model to extract carrier concentrations in fully depleted GaN films using capacitance-voltage (C-V) measurements. Extensive mercury probe C-V profiling has been performed on GaN films of differing thicknesses and doping levels in order to validate this model. Carrier concentrations as extracted from both the conventional C-V technique for partially depleted films having the same doping concentration, and Hall measurements show excellent agreement with those predicted by the proposed model thus establishing the utility of this technique. This model can be readily extended to estimate background carrier concentrations from the depletion region capacitances of HEMT structures and fully depleted films of any class of semiconductor materials.

  3. Silicon-on-insulator 1×2 Y-junction Optical Switch Based on Waveguide-vanishing Effect①②

    Institute of Scientific and Technical Information of China (English)

    1997-01-01

    The silicon-on-insulator(SOI)1×2Y-junction optical waveguide switch has been proposed and fabricated,which is based on the large cross-section single-mode rib waveguide condition,the waveguide-vanishing effect and the free-carrier plasma dispersion effect.In the switch,the SOI technique utilizer silicon and silicon dioxide thermal bonding and back-polishing.The insertion loss and extinction ratio of the device are measured to be less than 4.78dB and 20.8dB respectively at a wavelength of 1.3μm and an injection current of 45mA.Response time is about 160ns.

  4. Total dose radiation response of modified commercial silicon-on-insulator materials with nitrogen implanted buried oxide

    Institute of Scientific and Technical Information of China (English)

    Zheng Zhong-Shan; Liu Zhong-Li; Yu Fang; Li Ning

    2012-01-01

    Nitrogen ions of various doses are implanted into the buried oxide (BOX) of commercial silicon-on-insulator (SOI)materials,and subsequent annealings are carried out at various temperatures.The total dose radiation responses of the nitrogen-implanted SOI wafers are characterized by the high frequency capacitance-voltage (C-V) technique after irradiation using a Co-60 source.It is found that there exist relatively complex relationships between the radiation hardness of the nitrogen implanted BOX and the nitrogen implantation dose at different irradiation doses.Fhe experimental results also suggest that a lower dose nitrogen implantation and a higher post-implantation annealing temperature are suitable for improving the radiation hardness of SOI wafer.Based on the measured C-V data,secondary ion mass spectrometry (SIMS),and Fourier transform infrared (FTIR) spectroscopy,the total dose responses of the nitrogen-implanted SOI wafers are discussed.

  5. Ultrafast, green third-harmonic generation and strong-field phenomena in silicon-on-insulator nanoplasmonic waveguides

    CERN Document Server

    Sederberg, Shawn

    2013-01-01

    The emergence of strong-field nanoplasmonics brings extreme laser field-matter interaction into the realm of nanoscale science, unveiling exciting new physics. Highly nonlinear interaction is enabled by tightly confined electric fields in nanoplasmonic structures, permitting use of optical fields from low-power laser oscillators. Here, we report the first demonstration of visible 517nm third harmonic generation in ultracompact nanoplasmonic waveguides on a silicon-on-insulator platform at an unprecedented conversion efficiency of ~10^{-5}. Exponential growth of broadband white light generation confirms a new strong-field phenomenon of ponderomotive force-driven electron avalanche multiplication. Using time-resolved experiments, we show that the strong nanoplasmonic field confinement allows nonlinear interaction to occur on an ultrafast timescale of 1.98 +/- 0.40 ps, despite the long free-carrier lifetime in silicon. These findings uncover a new strong-field interaction that can be used in sensitive nanoplasmo...

  6. Design of a vector-sum integrated microwave photonic phase shifter in silicon-on-insulator waveguides.

    Science.gov (United States)

    Qu, Pengfei; Liu, Caixia; Dong, Wei; Chen, Weiyou; Li, Fumin; Li, Haibin; Gong, Zhaoxin; Ruan, Shengping; Zhang, Xindong; Zhou, Jingran

    2011-06-10

    An orthogonal vector-sum integrated microwave photonic phase shifter (IMWPPS), consisting of mode-order converter multiplexers (MOCMs), a variable optical power splitter (VOPS), an optical switch (OS) and fixed time delay lines (FTDLs), was theoretically demonstrated in a silicon-on-insulator wafer. MOCMs, as a key element of our device, were employed to generate orthogonal vector signals and served as lossless optical combiners. Combining with the thermo-optical VOPS, OS and FTDLs, the microwave phase shift of 0∼2π could be achieved by a refractive index variation of 0∼15×10(-3) in the millimeter wave band. The corresponding tuning resolution was about 1.64°/°C. This work, for the first time to our knowledge, provides an attractive solution to transferring a vector-sum method based bulk MWPPS into a integrated one, which is very important for large-scale optically controlled phase array antenna.

  7. Numerically controlled atmospheric-pressure plasma sacrificial oxidation using electrode arrays for improving silicon-on-insulator layer uniformity

    Science.gov (United States)

    Takei, Hiroyasu; Yoshinaga, Keinosuke; Matsuyama, Satoshi; Yamauchi, Kazuto; Sano, Yasuhisa

    2015-01-01

    Silicon-on-insulator (SOI) wafers are important semiconductor substrates in high-performance devices. In accordance with device miniaturization requirements, ultrathin and highly uniform top silicon layers (SOI layers) are required. A novel method involving numerically controlled (NC) atmospheric-pressure plasma sacrificial oxidation using an electrode array system was developed for the effective fabrication of an ultrathin SOI layer with extremely high uniformity. Spatial resolution and oxidation properties are the key factors controlling ultraprecision machining. The controllability of plasma oxidation and the oxidation properties of the resulting experimental electrode array system were examined. The results demonstrated that the method improved the thickness uniformity of the SOI layer over one-sixth of the area of an 8-in. wafer area.

  8. Thermo-optic Imbert-Fedorov effect in a prism-waveguide coupling system with silicon-on-insulator

    Science.gov (United States)

    Tang, Tingting; Li, Chaoyang; Luo, Li; Zhang, Yanfen; Yuan, Quan

    2016-07-01

    In this paper, a prism-waveguide coupling system based on silicon-on-insulator (SOI) is revisited. We find that thermo-optic Imbert-Fedorov (TOIF) effect displays in this four-layer optical system which has not been proposed before. Furthermore, we discuss the TOIF shifts in prism/SiO2/Si/SiO2 and prism/Au/Si/SiO2 waveguides with different parameters and study the observed phenomena from physical point of view. It is shown that the maximum IF shift can achieve 140 μm in a prism/Au/Si/SiO2 waveguide which is large enough to be directly measured by the calculation results. Accordingly, TOIF shift provides a temperature control method for the enhancement and modulation of IF shift.

  9. A novel structure of silicon-on-insulator microring biosensor based on Young's two-slit interference and its simulation

    Institute of Scientific and Technical Information of China (English)

    Su Baoqing; Wang Chunxia; Kan Qiang; Li Junhua; Xie Yiyang; Wang Zhenzhen; Chen Hongda

    2011-01-01

    A novel silicon-on-insulator microring biosensor based on Young's twoslit interference has been demonstrated.The transducer signal from electric field intensity distribution on the interference screen is given by using the transfer matrix method (TMM) and two-slit interference principle.The result shows that the structure we propose is advantageous for sensing as the interference pattern is very sensitive to the ambient refractive index around the microring.A small perturbation in refractive index around the microring △nc will result in a notable shift of destructive interference points (DIPs) on the interference screen.By detecting the shift of the DIPs,the ambient refractive index change can be obtained.

  10. Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices

    Science.gov (United States)

    Bingqing, Xie; Bo, Li; Jinshun, Bi; Jianhui, Bu; Chi, Wu; Binhong, Li; Zhengsheng, Han; Jiajun, Luo

    2016-07-01

    The experimental results of the cryogenic temperature characteristics on 0.18-μm silicon-on-insulator (SOI) metal-oxide-silicon (MOS) field-effect-transistors (FETs) were presented in detail. The current and capacitance characteristics for different operating conditions ranging from 300 K to 10 K were discussed. SOI MOSFETs at cryogenic temperature exhibit improved performance, as expected. Nevertheless, operation at cryogenic temperature also demonstrates abnormal behaviors, such as the impurity freeze-out and series resistance effects. In this paper, the critical parameters of the devices were extracted with a specific method from 300 K to 10 K. Accordingly, some temperature-dependent-parameter models were created to improve fitting precision at cryogenic temperature. Project supported by the National Natural Science Foundation of China (Grant Nos. 61176095 and 61404169) and the Youth Innovation Promotion Association of Chinese Academy of Sciences.

  11. Charging effects on the carrier mobility in silicon-on-insulator wafers covered with a high-k layer

    Science.gov (United States)

    Halley, D.; Norga, G.; Guiller, A.; Fompeyrine, J.; Locquet, J. P.; Drechsler, U.; Siegwart, H.; Rossel, C.

    2003-11-01

    The carrier mobility μ in low-doped silicon-on-insulator wafers is found to be strongly modified by the deposition of a thin ZrO2 or SrZrO3 top layer grown by molecular-beam epitaxy. Pseudo-metal-oxide-semiconductor field-effect-transistor measurements performed on several samples clearly show a correlation between μ and the density of interface traps (Dit) at the Si/buried-oxide interface. The reduction of Dit by a forming gas anneal leads to a corresponding increase in mobility. Moreover, the high-k/Si interface can contribute to the total drain current via the creation of an inversion channel induced by trapped charges in the high-k layer. Using Hall-effect measurements, we took advantage of this additional current to evaluate the carrier mobility at the high-k/Si interface, without the need of a top gate electrode.

  12. Tailoring the spectral response of add/drop single and multiple resonators in silicon-on-insulator Invited Paper

    Institute of Scientific and Technical Information of China (English)

    B. Timotijevic; G. Mashanovich; A. Michaeli; O. Cohen; V. M. N. Passaro; J. Crnjanski; G. T. Reed

    2009-01-01

    Channel dropping waveguide filters based on single and multiple resonators in silicon-on-insulator (SOI) technology are of great interest due to their compactness and high wavelength selectivity, which is a desir- able feature for photonic modulators, detectors, and other optically integrated components in telecommu- nication systems, in particular for wavelength division multiplexing (WDM) systems. Particular advantage of these filters is that they are capable of producing relatively large free spectral range (FSR) as well as narrow 3-dB bandwidth of the filter resonances. Herein we report experimental results and discuss the pos- sibility of designing mono-mode and (nearly) polarization independent SOI ring and racetrack resonators with the FSR in excess of 30 nm.

  13. A high-efficiency grating coupler between single-mode fiber and silicon-on-insulator waveguide

    Science.gov (United States)

    Liu, Rongrui; Wang, Yubing; Yin, Dongdong; Ye, Han; Yang, Xiaohong; Han, Qin

    2017-06-01

    We present the design of a diffractive grating structure and get the optimal parameters which can achieve more than 75% coupling efficiency (CE) between single-mode fiber and silicon-on-insulator (SOI) waveguide through 2D finite-different time-domain (FDTD) simulation. The proposed architecture has a uniform structure with no bottom reflection element or silicon overlay. The structure, including grating couplers, adiabatic tapers and interconnection waveguides can be fabricated on the SOI waveguide with only a single electron-beam lithography (ICP) step, which is CMOS-compatible. A relatively high coupling efficiency of 47.2% was obtained at a wavelength of 1562 nm. Project supported by the National Key Research and Development Program of China (No. 2016YFB0402404), the High-Tech Research and Development Program of China (Nos. 2013AA031401, 2015AA016902, 2015AA016904), and the National Natural Foundation of China (Nos. 61674136, 61435002, 61176053, 61274069)

  14. An optical MEMS accelerometer fabricated using double-sided deep reactive ion etching on silicon-on-insulator wafer

    Science.gov (United States)

    Teo, Adrian J. T.; Li, Holden; Tan, Say Hwa; Yoon, Yong-Jin

    2017-06-01

    Optical MEMS devices provide fast detection, electromagnetic resilience and high sensitivity. Using this technology, an optical gratings based accelerometer design concept was developed for seismic motion detection purposes that provides miniaturization, high manufacturability, low costs and high sensitivity. Detailed in-house fabrication procedures of a double-sided deep reactive ion etching (DRIE) on a silicon-on-insulator (SOI) wafer for a micro opto electro mechanical system (MOEMS) device are presented and discussed. Experimental results obtained show that the conceptual device successfully captured motion similar to a commercial accelerometer with an average sensitivity of 13.6 mV G-1, and a highest recorded sensitivity of 44.1 mV G-1. A noise level of 13.5 mV was detected due to experimental setup limitations. This is the first MOEMS accelerometer developed using double-sided DRIE on SOI wafer for the application of seismic motion detection, and is a breakthrough technology platform to open up options for lower cost MOEMS devices.

  15. Design and theoretical investigation of a silicon-on-insulator based electro-optical logic gate device

    Science.gov (United States)

    Li, Lei; Qi, Zhipeng; Hu, Guohua; Yun, Binfeng; Zhong, Yuan; Cui, Yiping

    2016-10-01

    A compact electro-optical "NOR" logic gate device based on silicon-on-insulator (SOI) platform is proposed and investigated theoretically. By introducing a hook-type waveguide, the signal could be coupled between the bus and hook-type waveguide to form an optical circuit and realize NOR logic gate. We can easily realize the NOR logical function by the voltage applied on the coupling components. The numerical simulation shows that a high coupling efficiency of more than 99% is obtained at the wavelength of 1550 nm, and the footprint of our device is smaller than 90 μm2. In addition, the response time of the proposed NOR logic gate is 3 ns with a switching voltage of 1.8 V. Moreover, it is demonstrated that such NOR logic gate device could obtain an extinction ratio of 21.8 dB. Thus, it has great potential to achieve high speed response, low power consumption, and small footprint, which fulfill the demands of next-generation on-chip computer multiplex processors.

  16. Microstructural and Electrical Properties of ZrO2 Thin Films Prepared on silicon on Insulator with Thin Top silicon

    Institute of Scientific and Technical Information of China (English)

    章宁琳; 宋志棠; 沈勤我; 林成鲁

    2003-01-01

    Amorphous zirconia thin films were deposited directly on silicon-on-insulator (SOI) substrates with thin top silicon by ultra-high vacuum electron beam evaporation. Spreading resistance profile and scanning transmission-electron microscopy (TEM) were used to detect the interface quality and microstructure, revealing that the interface between the zirconium oxide films and top silicon was abrupt and clear. The films kept to be amorphous up to the rapid thermal temperature of 700°C for 300s, but arriving at 700°C an unknown interfacial product appeared,which was probably ZrSixOy. High frequency capacitance-voltage (C- V) characteristics at 1 MHz performed on metal-oxide-SOI structure revealed that this interfacial product exhibited good electrical properties of zirconia thin films. When the annealing temperature increased from 600°C to 700°C, flat voltage VFB changed from -2.451 to -1.741 eV, showing the improvement in the quality of the films. The cumulative region capacitance decreased from 3.058 × 10-11F to 3.012 × 10-11F, indicating increasing equivalent oxide thickness, which is in agreement with the result of high-resolution cross-sectional TEM.

  17. High-stroke silicon-on-insulator MEMS nanopositioner: Control design for non-raster scan atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Maroufi, Mohammad, E-mail: Mohammad.Maroufi@uon.edu.au; Fowler, Anthony G., E-mail: Anthony.Fowler@uon.edu.au; Bazaei, Ali, E-mail: Ali.Bazaei@newcastle.edu.au; Moheimani, S. O. Reza, E-mail: Reza.Moheimani@newcastle.edu.au [School of Electrical Engineering and Computer Science, University of Newcastle, Callaghan NSW 2308 (Australia)

    2015-02-15

    A 2-degree of freedom microelectromechanical systems nanopositioner designed for on-chip atomic force microscopy (AFM) is presented. The device is fabricated using a silicon-on-insulator-based process and is designed as a parallel kinematic mechanism. It contains a central scan table and two sets of electrostatic comb actuators along each orthogonal axis, which provides displacement ranges greater than ±10 μm. The first in-plane resonance modes are located at 1274 Hz and 1286 Hz for the X and Y axes, respectively. To measure lateral displacements of the stage, electrothermal position sensors are incorporated in the design. To facilitate high-speed scans, the highly resonant dynamics of the system are controlled using damping loops in conjunction with internal model controllers that enable accurate tracking of fast sinusoidal set-points. To cancel the effect of sensor drift on controlled displacements, washout controllers are used in the damping loops. The feedback controlled nanopositioner is successfully used to perform several AFM scans in contact mode via a Lissajous scan method with a large scan area of 20 μm × 20 μm. The maximum scan rate demonstrated is 1 kHz.

  18. Fabrication of open-top microchannel plate using deep X-ray exposure mask made with silicon on insulator substrate

    CERN Document Server

    Fujimura, T; Etoh, S I; Hattori, R; Kuroki, Y; Chang, S S

    2003-01-01

    We propose a high-aspect-ratio open-top microchannel plate structure. This type of microchannel plate has many advantages in electrophoresis. The plate was fabricated by deep X-ray lithography using synchrotron radiation (SR) light and the chemical wet etching process. A deep X-ray exposure mask was fabricated with a silicon on insulator (SOI) substrate. The patterned Si microstructure was micromachined into a thin Si membrane and a thick Au X-ray absorber was embedded in it by electroplating. A plastic material, polymethylmethacrylate (PMMA) was used for the plate substrate. For reduction of the exposure time and high-aspect-ratio fast wet development, the fabrication condition was optimized with respect to not the exposure dose but to the PMMA mean molecular weight (M.W.) changing after deep X-ray exposure as measured by gel permeation chromatography (GPC). Decrement of the PMMA M.W. and increment of the wet developer temperature accelerated the etching rate. Under optimized fabrication conditions, a microc...

  19. High-stroke silicon-on-insulator MEMS nanopositioner: control design for non-raster scan atomic force microscopy.

    Science.gov (United States)

    Maroufi, Mohammad; Fowler, Anthony G; Bazaei, Ali; Moheimani, S O Reza

    2015-02-01

    A 2-degree of freedom microelectromechanical systems nanopositioner designed for on-chip atomic force microscopy (AFM) is presented. The device is fabricated using a silicon-on-insulator-based process and is designed as a parallel kinematic mechanism. It contains a central scan table and two sets of electrostatic comb actuators along each orthogonal axis, which provides displacement ranges greater than ±10 μm. The first in-plane resonance modes are located at 1274 Hz and 1286 Hz for the X and Y axes, respectively. To measure lateral displacements of the stage, electrothermal position sensors are incorporated in the design. To facilitate high-speed scans, the highly resonant dynamics of the system are controlled using damping loops in conjunction with internal model controllers that enable accurate tracking of fast sinusoidal set-points. To cancel the effect of sensor drift on controlled displacements, washout controllers are used in the damping loops. The feedback controlled nanopositioner is successfully used to perform several AFM scans in contact mode via a Lissajous scan method with a large scan area of 20 μm × 20 μm. The maximum scan rate demonstrated is 1 kHz.

  20. Grating couplers in silicon-on-insulator: The role of photonic guided resonances on lineshape and bandwidth

    Science.gov (United States)

    Passoni, M.; Gerace, D.; Carroll, L.; Andreani, L. C.

    2017-01-01

    Most grating couplers for silicon photonics are designed to match the approximately 10 μm mode-field diameter (MFD) of single-mode telecom fibres. In this letter, we analyse grating-coupler designs in the Silicon-on-Insulator (SOI) platform in a wide range of MFDs (4-100 μm) and related footprints, to give a physical understanding of the trends in efficiency and lineshape of the corresponding coupling spectra. We show that large-footprint grating couplers have an intrinsic Lorentzian lineshape that is determined by the quasi-guided photonic modes (or guided resonances) of the corresponding photonic crystal slab, while small-footprint grating couplers have a Gaussian lineshape resulting from the k-space broadening of the incident mode. The crossover between the two regimes is characterized by Voigt lineshapes. Multi-objective particle-swarm optimisation of selected small-footprint apodized grating-couplers is then used to locate the "Pareto fronts;" along which the highest coupling efficiency is achieved for a given bandwidth. This approach identifies several high-efficiency 220 nm SOI grating coupler designs with 1 dB bandwidths exceeding 100 nm. Such grating couplers are ideally suited for broadband photonic applications, such as wavelength-division multiplexing and environmental sensing, and are compatible with commercially available ultra-high numerical aperture fibres.

  1. Infrared response of the lateral PIN structure of a highly titanium-doped silicon-on-insulator material

    Institute of Scientific and Technical Information of China (English)

    Ma Zhi-Hua; Cao Quan; Zuo Yu-Hua; Zheng Jun; Xue Chun-Lai; Cheng Bu-Wen; Wang Qi-Ming

    2011-01-01

    The intermediate band (IB) solar cell is a promising third-generation solar cell that could possibly achieve very high efficiency above the Shockley-Queisser limit.One of the promising ways to synthesize IB material is to introduce heavily doped deep level impurities in conventional semiconductors.High-doped Ti with a concentration of 1020 cm-3- 1021 cm-3 in the p-type top Si layer of silicon-on-insulator (SOI) substrate is obtained by ion implantation and rapid thermal annealing (RTA).Secondary ion mass spectrometry measurements confirm that the Ti concentration exceeds the theoretical Mott limit,the main requirement for the formation of an impurity intermediate band.Increased absorption is observed in the infrared (IR) region by Fourier transform infrared spectroscopy (FTIR) technology.By using a lateral p-i-n structure,an obvious infrared response in a range of 1100 nm-2000 nm is achieved in a heavily Ti-doped SOl substrate,suggesting that the improvement on IR photoresponse is a result of increased absorption in the IR.The experimental results indicate that heavily Ti-implanted Si can be used as a potential kind of intermediate-band photovoltaic material to utilize the infrared photons of the solar spectrum.

  2. Label-free electrical determination of trypsin activity by a silicon-on-insulator based thin film resistor.

    Science.gov (United States)

    Neff, Petra A; Serr, Andreas; Wunderlich, Bernhard K; Bausch, Andreas R

    2007-10-08

    A silicon-on-insulator (SOI) based thin film resistor is employed for the label-free determination of enzymatic activity. We demonstrate that enzymes, which cleave biological polyelectrolyte substrates, can be detected by the sensor. As an application, we consider the serine endopeptidase trypsin, which cleaves poly-L-lysine (PLL). We show that PLL adsorbs quasi-irreversibly to the sensor and is digested by trypsin directly at the sensor surface. The created PLL fragments are released into the bulk solution due to kinetic reasons. This results in a measurable change of the surface potential allowing for the determination of trypsin concentrations down to 50 ng mL(-1). Chymotrypsin is a similar endopeptidase with a different specificity, which cleaves PLL with a lower efficiency as compared to trypsin. The activity of trypsin is analyzed quantitatively employing a kinetic model for enzyme-catalyzed surface reactions. Moreover, we have demonstrated the specific inactivation of trypsin by a serine protease inhibitor, which covalently binds to the active site of the enzyme.

  3. Formation and dielectric properties of polyelectrolyte multilayers studied by a silicon-on-insulator based thin film resistor.

    Science.gov (United States)

    Neff, Petra A; Wunderlich, Bernhard K; Klitzing, Regine V; Bausch, Andreas R

    2007-03-27

    The formation of polyelectrolyte multilayers (PEMs) is investigated using a silicon-on-insulator based thin film resistor which is sensitive to variations of the surface potential. The buildup of the PEMs at the silicon oxide surface of the device can be observed in real time as defined potential shifts. The influence of polymer charge density is studied using the strong polyanion poly(styrene sulfonate), PSS, combined with the statistical copolymer poly(diallyl-dimethyl-ammoniumchloride-stat-N-methyl-N-vinylacetamide), P(DADMAC-stat-NMVA), at various degrees of charge (DC). The multilayer formation stops after a few deposition steps for a DC below 75%. We show that the threshold of surface charge compensation corresponds to the threshold of multilayer formation. However, no reversion of the preceding surface charge was observed. Screening of polyelectrolyte charges by mobile ions within the polymer film leads to a decrease of the potential shifts with the number of layers deposited. This decrease is much slower for PEMs consisting of P(DADMAC-stat-NMVA) and PSS as compared to PEMs consisting of poly(allylamine-hydrochloride), PAH, and PSS. From this, significant differences in the dielectric constants of the polyelectrolyte films and in the concentration of mobile ions within the films can be derived.

  4. Investigation of negative bias temperature instability dependence on fin width of silicon-on-insulator-fin-based field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Young, Chadwin D., E-mail: chadwin.young@utdallas.edu; Wang, Zhe [Materials Science and Engineering, University of Texas at Dallas, 800 W. Campbell Road, Richardson, Texas 75080 (United States); Neugroschel, Arnost [Department of Electrical and Computer Enginering, University of Florida, Gainesville, Florida 32611 (United States); Majumdar, Kausik; Matthews, Ken; Hobbs, Chris [SEMATECH, Albany, New York 12203 (United States)

    2015-01-21

    The fin width dependence of negative bias temperature instability (NBTI) of double-gate, fin-based p-type Field Effect Transistors (FinFETs) fabricated on silicon-on-insulator (SOI) wafers was investigated. The NBTI degradation increased as the fin width narrowed. To investigate this phenomenon, simulations of pre-stress conditions were employed to determine any differences in gate oxide field, fin band bending, and electric field profile as a function of the fin width. The simulation results were similar at a given gate stress bias, regardless of the fin width, although the threshold voltage was found to increase with decreasing fin width. Thus, the NBTI fin width dependence could not be explained from the pre-stress conditions. Different physics-based degradation models were evaluated using specific fin-based device structures with different biasing schemes to ascertain an appropriate model that best explains the measured NBTI dependence. A plausible cause is an accumulation of electrons that tunnel from the gate during stress into the floating SOI fin body. As the fin narrows, the sidewall device channel moves in closer proximity to the stored electrons, thereby inducing more band bending at the fin/dielectric interface, resulting in a higher electric field and hole concentration in this region during stress, which leads to more degradation. The data obtained in this work provide direct experimental proof of the effect of electron accumulation on the threshold voltage stability in FinFETs.

  5. Narrow line-width single-longitudinal-mode fiber laser using silicon-on-insulator based micro-ring-resonator

    Science.gov (United States)

    Liu, Yang; Hsu, Yung; Hsu, Chin-Wei; Yang, Ling-Gang; Chow, Chi-Wai; Yeh, Chien-Hung; Lai, Yin-Chieh; Tsang, Hon-Ki

    2016-02-01

    In this work, we propose and demonstrate a stable single-longitudinal-mode (SLM) fiber laser with narrow line-width by using an integrated silicon-on-insulator micro-ring resonator (SOI MRR) and two subsidiary fiber rings for the first time, to the best of our knowledge. The laser is tunable over the wavelength range from 1546 to 1570 nm, with only step tuning of 2 nm steps. A maximum 49 dB side mode suppression ratio (SMSR) can be achieved. The compact SOI MRR provides a large free-spectral-range (FSR), while the subsidiary rings provide Vernier effect producing a single lasing mode. The FSR of the SOI MRR can be very large and controllable (since it is easy to fabricate small SOI MRR when compared with making small fiber-rings) using the complementary-metal-oxide-semiconductor (CMOS) compactable SOI fabrication processes. In our proposed laser, the measured single sideband (SSB) spectrum shows that the densely spaced longitudinal modes can be significantly suppressed to achieve SLM. The laser linewidth is only 3.5 kHz measured by using the self-heterodyne method. 30 min stability evaluation in terms of lasing wavelength and optical power is performed; showing the optical wavelength and power are both very stable, with fluctuations of only 0.02 nm and 0.8 dB, respectively.

  6. Super-enhancement of 1.54 μm emission from erbium codoped with oxygen in silicon-on-insulator

    Science.gov (United States)

    Lourenço, M. A.; Milošević, M. M.; Gorin, A.; Gwilliam, R. M.; Homewood, K. P.

    2016-11-01

    We report on the super enhancement of the 1.54 μm Er emission in erbium doped silicon-on-insulator when codoped with oxygen at a ratio of 1:1. This is attributed to a more favourable crystal field splitting in the substitutional tetrahedral site favoured for the singly coordinated case. The results on these carefully matched implant profiles show that optical response is highly determined by the amount and ratio of erbium and oxygen present in the sample and ratios of O:Er greater than unity are severely detrimental to the Er emission. The most efficient luminescence is forty times higher than in silicon-on-insulator implanted with Er only. This super enhancement now offers a realistic route not only for optical communication applications but also for the implementation of silicon photonic integrated circuits for sensing, biomedical instrumentation and quantum communication.

  7. Oxygen in zone-melting-recrystallized silicon-on-insulator films: Its distribution and possible role in sub-boundary formation

    Science.gov (United States)

    Fan, John C. C.; Tsaur, B.-Y.; Chen, C. K.; Dick, J. R.; Kazmerski, L. L.

    1984-06-01

    Using secondary-ion mass spectroscopy, we have found that oxygen is strongly concentrated at the sub-boundaries in zone-melting-recrystallized silicon-on-insulator films prepared by the graphite strip heater technique. This observation suggests that the formation of sub-boundaries during recrystallization may be caused by constitutional supercooling resulting from the presence of oxygen that is dissolved into the molten Si zone from the adjacent SiO2 layers.

  8. Ultra-Low Power High Temperature and Radiation Hard Complementary Metal-Oxide-Semiconductor (CMOS) Silicon-on-Insulator (SOI) Voltage Reference

    OpenAIRE

    El Hafed Boufouss; Francis, Laurent A.; Valeriya Kilchytska; Pierre Gérard; Pascal Simon; Denis Flandre

    2013-01-01

    This paper presents an ultra-low power CMOS voltage reference circuit which is robust under biomedical extreme conditions, such as high temperature and high total ionized dose (TID) radiation. To achieve such performances, the voltage reference is designed in a suitable 130 nm Silicon-on-Insulator (SOI) industrial technology and is optimized to work in the subthreshold regime of the transistors. The design simulations have been performed over the temperature range of -40–200 °C and for differ...

  9. Two-dimensional analytical models for asymmetric fully depleted double-gate strained silicon MOSFETs

    Institute of Scientific and Technical Information of China (English)

    Liu Hong-Xia; Li Jin; Li Bin; Cao Lei; Yuan Bo

    2011-01-01

    This paper develops the simple and accurate two-dimensional analytical models for new asymmetric double-gate fully depleted strained-Si MOSFET. The models mainly include the analytical equations of the surface potential, surface electric field and threshold voltage, which are derived by solving two dimensional Poisson equation in strained-Si layer.The models are verified by numerical simulation. Besides offering the physical insight into device physics in the model,the new structure also provides the basic designing guidance for further immunity of short channel effect and drain-induced barrier-lowering of CMOS-based devices in nanometre scale.

  10. Analytical modeling of drain current and RF performance for double-gate fully depleted nanoscale SOI MOSFETs

    Institute of Scientific and Technical Information of China (English)

    Rajiv Sharma; Sujata Pandey; Shail Bala Jain

    2012-01-01

    A new 2D analytical drain current model is presented for symmetric double-gate fully depleted nanoscale SOI MOSFETs.Investigation of device parameters like transconductance for double-gate fully depleted nanoscale SOI MOSFETs is also carried out.Finally this work is concluded by modeling the cut-off frequency,which is one of the main figures of merit for analog/RF performance for double-gate fully depleted nanoscale SOI MOSFETs.The results of the modeling are compared with those obtained by a 2D ATLAS device simulator to verify the accuracy of the proposed model.

  11. DMAPS: a fully depleted monolithic active pixel sensor - analog performance characterization

    CERN Document Server

    Havránek, Miroslav; Krüger, Hans; Fu, Yunan; Germic, Leonard; Kishishita, Tetsuichi; Obermann, Theresa; Wermes, Norbert

    2014-01-01

    Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s based on silicon substrates with a thin epitaxial layer (thickness of 10-15 $\\mu$m) in which charge is collected on an electrode, albeit by disordered and slow diffusion rather than by drift in a directed electric field. As a consequence, the signal is small ($\\approx$ 1000 e$^-$) and the radiation tolerance is much below the LHC requirements by factors of 100 to 1000. In this paper we present the development of a fully Depleted Monolithic Active Pixel Sensors (DMAPS) based on a high resistivity substrate allowing the creation of a fully depleted detection volume. This concept overcomes the inherent limitations of charge collection by diffusion in the standard MAPS designs. We present results from a test chip EPCB01 designed in a commercial 150 nm CMOS technology. The technology provides a thin (50 $\\mu$m) high resistivity n-type silicon substrate as well as an additional deep p-well which allows to integrate full CMOS circuitry i...

  12. DMAPS: a fully depleted monolithic active pixel sensor—analog performance characterization

    Science.gov (United States)

    Havránek, M.; Hemperek, T.; Krüger, H.; Fu, Y.; Germic, L.; Kishishita, T.; Marinas, C.; Obermann, T.; Wermes, N.

    2015-02-01

    Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s based on silicon substrates with a thin epitaxial layer (thickness of 10-15 μm) in which charge is collected on an electrode, albeit by disordered and slow diffusion rather than by drift in a directed electric field. As a consequence, the signal of these conventional MAPS is small (≈1000 e-) and the radiation tolerance is limited. In this paper, the development of a fully Depleted Monolithic Active Pixel Sensors (DMAPS) based on a high resistivity substrate allowing the creation of a fully depleted detection volume is presented. This concept overcomes the inherent limitations of charge collection by diffusion in the standard MAPS designs. We present results from a prototype chip EPCB01 designed in a commercial 150 nm CMOS technology. The technology provides a thin (≈50 μm) high resistivity n-type silicon substrate as well as an additional deep p-well which allows to integrate full CMOS circuitry inside the pixel. Different matrix types with several variants of collection electrodes and pixel electronics have been implemented. Measurements of the analog performance of this first implementation of DMAPS pixels are presented.

  13. Improved Spatial Resolution in Thick, Fully-Depleted CCDs withEnhanced Red Sensitivity

    Energy Technology Data Exchange (ETDEWEB)

    Fairfield, Jessamyn A.

    2005-11-10

    The point spread function (PSF) is an important measure ofspatial resolution in CCDs for point-like objects, since it can affectuse in imaging and spectroscopic applications. We present new data andtheoretical developments in the study of lateral charge diffusion inthick, fully-depleted charge-coupled devices (CCDs) developed at LawrenceBerkeley National Laboratory (LBNL). Because they are fully depleted, theLBNL devices have no field-free region, and diffusion can be controlledthrough the application of an external bias voltage. We give results fora 3512x3512 format, 10.5 ?m pixel back-illuminated p-channel CCDdeveloped for the SuperNova/ Acceleration Probe (SNAP), a proposedsatellite-based experiment designed to study dark energy. The PSF wasmeasured at substrate bias voltages between 3 V and 115 V. At a biasvoltage of 115V, we measure an rms diffusion of 3.7 +- 0.2 ?m. Lateralcharge diffusion in LBNL CCDs is thus expected to meet the SNAPrequirements.

  14. Anomalous DIBL Effect in Fully Depleted SOI MOSFETs Using Nanoscale Gate-Recessed Channel Process

    Directory of Open Access Journals (Sweden)

    Avi Karsenty

    2015-01-01

    Full Text Available Nanoscale Gate-Recessed Channel (GRC Fully Depleted- (FD- SOI MOSFET device with a silicon channel thickness (tSi as low as 2.2 nm was first tested at room temperature for functionality check and then tested at low temperature (77 K for I-V characterizations. In spite of its FD-SOI nanoscale thickness and long channel feature, the device has surprisingly exhibited a Drain-Induced Barrier Lowering (DIBL effect at RT. However, this effect was suppressed at 77 K. If the apparition of such anomalous effect can be explained by a parasitic short channel transistor located at the edges of the channel, its suppression is explained by the decrease of the potential barrier between the drain and the channel when lowering the temperature.

  15. Spot Scan Probe of Lateral Field Effects in a Thick Fully-Depleted CCD

    CERN Document Server

    O'Connor, Paul

    2014-01-01

    Flat-field images with thick, fully-depleted CCDs exhibit response variations near the edges of the chip and at other locations, such as the regoins bordering mid-frame blooming stop implants. Two possible origins for these repsonse variations have been suggested: either photometric response (quantum efficiency) or effective pixel area is modified in these regions. In the latter case source position and shape distortions would be expected in these regions, with consequent impact on astrometric and weak lensing measurements. As an experimental check to distinguish between the two effects and to gauge the magnitude of distortion, we performed a measurment scanning an artificial star image across the affected region of one device.

  16. Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effects

    Science.gov (United States)

    Eminente, S.; Cristoloveanu, S.; Clerc, R.; Ohata, A.; Ghibaudo, G.

    2007-02-01

    A standard characterization method in fully depleted SOI devices consists in biasing the back interface in the accumulation regime, and measuring the front-channel properties. In ultra thin body device however, it is sometimes no longer possible to achieve such an accumulation regime at the back interface. This unusual effect is investigated by detailed simulations and analytical modelling of the potential and electron/hole concentrations. The enhancement of the interface coupling effect in ultra thin body devices, called super-coupling, can explain previously published experimental data [Pretet J, Ohata A, Dieudonne F, Allibert F, Bresson N, Matsumoto T, et al. Scaling issues for advanced SOI devices: gate oxide tunneling, thin buried oxide, and ultra-thin films. In: 7th International symposium silicon nitride and silicon dioxide thin insulating films, Paris, France, 2003. Electrochemical Society Proceedings, vol. 2003-02, Pennington (USA); 2003. p. 476-87], and reveals new challenges in the characterization of advanced SOI devices.

  17. Improved Spatial Resolution in Thick, Fully-Depleted CCDs withEnhanced Red Sensitivity

    Energy Technology Data Exchange (ETDEWEB)

    Fairfield, Jessamyn A.; Groom, Donald E.; Bailey, Stephen J.; Bebek, Christopher J.; Holland, Stephen E.; Karcher, Armin; Kolbe,William F.; Lorenzon, Wolfgang; Roe, Natalie A.

    2006-03-09

    The point spread function (PSF) is an important measure of spatial resolution in CCDs for point-like objects, since it affects image quality and spectroscopic resolution. We present new data and theoretical developments for lateral charge diffusion in thick, fully-depleted charge-coupled devices (CCDs) developed at Lawrence Berkeley National Laboratory (LBNL). Because they can be over-depleted, the LBNL devices have no field-free region and diffusion is controlled through the application of an external bias voltage. We give results for a 3512 x 3512 format, 10.5 {micro}m pixel back-illuminated p-channel CCD developed for the SuperNova/Acceleration Probe (SNAP), a proposed satellite-based experiment designed to study dark energy. The PSF was measured at substrate bias voltages between 3 V and 115 V. At a bias voltage of 115 V, we measure an rms diffusion of 3.7 {+-} 0.2 {micro}m. Lateral charge diffusion in LBNL CCDs will meet the SNAP requirements.

  18. Novel Folding Large-Scale Optical Switch Matrix with Total Internal Reflection Mirrors on Silicon-on-Insulator by Anisotropy Chemical Etching

    Institute of Scientific and Technical Information of China (English)

    LIU Jing-Wei; YU Jin-Zhong; CHEN Shao-Wu

    2005-01-01

    A compact optical switch matrix was designed, in which light circuits were folded by total internal reflective (TIR) mirrors. Two key elements, 2 × 2 switch and TIR mirror, have been fabricated on silicon-on-insulator wafer by anisotropy chemical etching. The 2 × 2 switch showed very low power consumption of 140mW and avery high speed of 8 ± 1 μs. An improved design for the TIR mirror was developed, and the fabricated mirror with smooth and vertical reflective facet showed low excess loss of 0.7 ± 0.3 dB at 1.55μm.

  19. Ultrafast all-optical switching and error-free 10 Gbit/s wavelength conversion in hybrid InP-silicon on insulator nanocavities using surface quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Bazin, Alexandre; Monnier, Paul; Beaudoin, Grégoire; Sagnes, Isabelle; Raj, Rama [Laboratoire de Photonique et de Nanostructures (CNRS UPR20), Route de Nozay, Marcoussis 91460 (France); Lenglé, Kevin; Gay, Mathilde; Bramerie, Laurent [Université Européenne de Bretagne (UEB), 5 Boulevard Laënnec, 35000 Rennes (France); CNRS-Foton Laboratory (UMR 6082), Enssat, BP 80518, 22305 Lannion Cedex (France); Braive, Rémy; Raineri, Fabrice, E-mail: fabrice.raineri@lpn.cnrs.fr [Laboratoire de Photonique et de Nanostructures (CNRS UPR20), Route de Nozay, Marcoussis 91460 (France); Université Paris Diderot, Sorbonne Paris Cité, 75207 Paris Cedex 13 (France)

    2014-01-06

    Ultrafast switching with low energies is demonstrated using InP photonic crystal nanocavities embedding InGaAs surface quantum wells heterogeneously integrated to a silicon on insulator waveguide circuitry. Thanks to the engineered enhancement of surface non radiative recombination of carriers, switching time is obtained to be as fast as 10 ps. These hybrid nanostructures are shown to be capable of achieving systems level performance by demonstrating error free wavelength conversion at 10 Gbit/s with 6 mW switching powers.

  20. Optimizing Design of Breakdown Voltage to Eliminate Back Gate Bias Effect in Silicon-on-Insulator Diode Using Low Doping Buried Layer

    Institute of Scientific and Technical Information of China (English)

    H0 Chi-Hon; LIAO Chen-Nan; CHIEN Feng-Tso; TSAI Yao-Tsung

    2009-01-01

    This work presents the optimal design of a silicon-on-insulator (SOI) diode structure to eliminate the back gate bias effect and to improve breakdown voltage. The SOI structure is characterized by inserting a silicon low doping buried layer (LDBL) between the silicon layer and the buried oxide layer. The LDBL thickness is a key parameter that affects the strong inversion condition of the back MOS capacitor of the new SOI diode. The optimal LDBL thickness in the SOI diode is 2.65μm. The LDBL shielding layer improved the breakdown voltage.

  1. Radiation Tolerance of Fully-Depleted P-Channel CCDs Designed for the SNAP Satellite

    CERN Document Server

    Dawson, Kyle; Emes, John; Holland, Steve; Jelinsky, Sharon; Karcher, Armin; Kolbe, William; Palaio, Nick; Roe, Natalie; Saha, Juhi; Takasaki, Koki; Wang, Guobin

    2007-01-01

    Thick, fully depleted p-channel charge-coupled devices (CCDs) have been developed at the Lawrence Berkeley National Laboratory (LBNL). These CCDs have several advantages over conventional thin, n-channel CCDs, including enhanced quantum efficiency and reduced fringing at near-infrared wavelengths and improved radiation tolerance. Here we report results from the irradiation of CCDs with 12.5 and 55 MeV protons at the LBNL 88-Inch Cyclotron and with 0.1-1 MeV electrons at the LBNL Co60 source. These studies indicate that the LBNL CCDs perform well after irradiation, even in the parameters in which significant degradation is observed in other CCDs: charge transfer efficiency, dark current, and isolated hot pixels. Modeling the radiation exposure over a six-year mission lifetime with no annealing, we expect an increase in dark current of 20 e/pixel/hr, and a degradation of charge transfer efficiency in the parallel direction of 3e-6 and 1e-6 in the serial direction. The dark current is observed to improve with an...

  2. A New Structure of Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor to Suppress the Floating Body Effect

    Institute of Scientific and Technical Information of China (English)

    朱鸣; 林青; 张正选; 林成鲁

    2003-01-01

    Considering that the silicon-on-insulator (SOI) devices have an inherent floating body effect, which may cause substantial influences in the performance of SOI device and circuit, we propose a novel device structure to suppress the floating body effect. In the new structure there is a buried p+ region under the n+ source and that region is extended to outside of the source, and this additional p+ region provides a path for accumulated holes to flow out of the body. Numerical simulations were carried out with Medici, and the output characteristics and gate characteristics were compared with those of conventional SOI counterparts. The simulated results show the suppression of floating body effect in the novel SOI device as expected.

  3. A Numerical Study on Phonon Spectral Contributions to Thermal Conduction in Silicon-on-Insulator Transistor Using Electron-Phonon Interaction Model

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Hyung-sun; Koh, Young Ha; Jin, Jae Sik [Chosun College of Science and Technology, Gwangju (Korea, Republic of)

    2017-06-15

    The aim of this study is to understand the phonon transfer characteristics of a silicon thin film transistor. For this purpose, the Joule heating mechanism was considered through the electron-phonon interaction model whose validation has been done. The phonon transport characteristics were investigated in terms of phonon mean free path for the variations in the device power and silicon layer thickness from 41 nm to 177 nm. The results may be used for developing the thermal design strategy for achieving reliability and efficiency of the silicon-on-insulator (SOI) transistor, further, they will increase the understanding of heat conduction in SOI systems, which are very important in the semiconductor industry and the nano-fabrication technology.

  4. Monte Carlo study of the electrothermal phenomenon in silicon-on-insulator and silicon-germanium-on-insulator metal-oxide field-effect transistors

    Science.gov (United States)

    Sadi, Toufik; Kelsall, Robert W.

    2010-03-01

    Self-heating effects are investigated in silicon-on-insulator (SOI), silicon-germanium-on-insulator (SGOI), and strained-silicon-directly-on-insulator (SSDOI) metal-oxide field-effect transistors (MOSFETs), using a Monte Carlo simulator self-consistently coupled with the solution of the heat diffusion equation. Although the influence of thermal effects is in general higher in these structures, as compared to bulk Si MOSFETs, its impact is much more important in SGOI and SSDOI FET structures incorporating ultrathin Si channels, with SGOI FETs giving the worst thermal performance. A study of the dependence of the extent of self-heating on the buried-oxide thickness is also performed, showing that this parameter is important in designing SOI structures with better thermal management.

  5. The breakdown mechanism of a high-side pLDMOS based on a thin-layer silicon-on-insulator structure

    Institute of Scientific and Technical Information of China (English)

    Zhao Yuan-Yuan; Qiao Ming; Wang Wei-Bin; Wang Meng; Zhang Bo

    2012-01-01

    A high-side thin-layer silicon-on-insulator (SOI) pLDMOS is proposed,adopting field implant (FI) and multiple field plate (MFP) technologies.The breakdown mechanisms of back gate (BG) turn-on,surface channel punch-through,and vertical and lateral avalanche breakdown are investigated by setting up analytical models,simulating related parameters and verifying experimentally.The device structure is optimized based on the above research.The shallow junction achieved through FI technology attenuates the BG effect,the optimized channel length eliminates the surface channel punch-through,the advised thickness of the buried oxide dispels the vertical avalanche breakdown,and the MFP technology avoids premature lateral avalanche breakdown by modulating the electric field distribution.Finally,for the first time,a 300 V high-side pLDMOS is experimentally realized on a 1.5 μm thick thin-layer SOI.

  6. Determination of the quasi-TE mode (in-plane) graphene linear absorption coefficient via integration with silicon-on-insulator racetrack cavity resonators.

    Science.gov (United States)

    Crowe, Iain F; Clark, Nicholas; Hussein, Siham; Towlson, Brian; Whittaker, Eric; Milosevic, Milan M; Gardes, Frederic Y; Mashanovich, Goran Z; Halsall, Matthew P; Vijayaraghaven, Aravind

    2014-07-28

    We examine the near-IR light-matter interaction for graphene integrated cavity ring resonators based on silicon-on-insulator (SOI) race-track waveguides. Fitting of the cavity resonances from quasi-TE mode transmission spectra reveal the real part of the effective refractive index for graphene, n(eff) = 2.23 ± 0.02 and linear absorption coefficient, α(gTE) = 0.11 ± 0.01dBμm(-1). The evanescent nature of the guided mode coupling to graphene at resonance depends strongly on the height of the graphene above the cavity, which places limits on the cavity length for optical sensing applications.

  7. A Numerical Study on the Anisotropic Thermal Conduction by Phonon Mean Free Path Spectrum of Silicon in Silicon-on-Insulator Transistor

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Hyung Sun; Koh, Young Ha; Jin, Jae Sik [Chosun Univ., Kwangju (Korea, Republic of)

    2016-02-15

    The primary concern of this research is to examine the phonon mean free path (MFP) spectrum contribution to heat conduction. The size effect of materials is determined by phonon MFP, and the size effect appears when the phonon MFP is similar to or less than the characteristic length of materials. Therefore, knowledge of the phonon MFP is essential to increase or decrease the heat conduction of a material for engineering applications, such as micro/nanosystems. In this study, frequency dependence of the phonon transport is considered using the Boltzmann transport equation based on a full phonon dispersion model. Additionally, the phonon MFP spectrums of in-plane and out-of plane heat transport are investigated by varying the film thickness of the silicon layer from 41 nm to 177 nm. This will increase the understanding of anisotropic heat conduction in a SOI (Silicon-on-Insulator) transistor.

  8. Silicon-on-insulator multimode-interference waveguide-based arrayed optical tweezers (SMART) for two-dimensional microparticle trapping and manipulation.

    Science.gov (United States)

    Lei, Ting; Poon, Andrew W

    2013-01-28

    We demonstrate two-dimensional optical trapping and manipulation of 1 μm and 2.2 μm polystyrene particles in an 18 μm-thick fluidic cell at a wavelength of 1565 nm using the recently proposed Silicon-on-insulator Multimode-interference (MMI) waveguide-based ARrayed optical Tweezers (SMART) technique. The key component is a 100 μm square-core silicon waveguide with mm length. By tuning the fiber-coupling position at the MMI waveguide input facet, we demonstrate various patterns of arrayed optical tweezers that enable optical trapping and manipulation of particles. We numerically simulate the physical mechanisms involved in the arrayed trap, including the optical force, the heat transfer and the thermal-induced microfluidic flow.

  9. Low Power-Consumption and High Response Frequency Thermo-Optic Variable Optical Attenuators Based on Silicon-on-Insulator Materials

    Institute of Scientific and Technical Information of China (English)

    FANG Qing; CHEN Peng; XIN Hong-Li; WANG Chun-Xia; LI Fang; LIU Yu-Liang

    2005-01-01

    @@ A novel silicon-on-insulator thermo-optic variable optical attenuator with isolated grooves based on a multimode interference coupler principle is fabricated by the inductive coupled plasma etching technology. The maximum fibre-to-fibre insertion loss is lower than 2.2 dB, the dynamic attenuation range is from 0 to 30 dB in the wavelength range 1500-1600nm, and the maximum power consumption is only 140mW. The response frequency of the fabricated variable optical attenuator is about 30 kHz. Compared to the variable optical attenuator without isolated grooves, the maximum power consumption decreases more than 220mW, and the response frequency rises are more than 20kHz.

  10. Subthreshold current model of fully depleted dual material gate SOI MOSFET

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Dual material gate SOI MOSFET with asymmetrical halo can suppress short channel effect and increase carriers transport efficiency. The analytical model of its subthreshold drain current is derived based on the explicit solution of two-dimensional Poisson's equation in the depletion region. The model takes into consideration the channel length modulation effect and the contribution of the back channel current component. Its validation is verified by comparision with two dimensional device simulator MEDICI.

  11. LePix-A high resistivity, fully depleted monolithic pixel detector

    CERN Document Server

    Giubilato, P; Mugnier, H; Bisello, D; Marchioro, A; Snoeys, W; Denes, P; Pantano, D; Rousset, J; Mattiazzo, S; Kloukinas, K; Potenza, A; Rivetti, A; Chalmet, P

    2013-01-01

    The LePix project explores monolithic pixel sensors fabricated in a 90 nm CMOS technology built over a lightly doped substrate. This approach keeps the advantages usually offered by Monolithic Active Pixel Sensors (MAPS), like a low input capacitance, having a single piece detector and using a standard CMOS production line, and adds the benefit of charge collection by drift from a depleted region several tens of microns deep into the substrate, therefore providing an excellent signal to noise ratio and a radiation tolerance superior to conventional un-depleted MAPS. Such sensors are expected to offer significant cost savings and reduction of power consumption for the same performance, leading to the use of much less material in the detector (less cooling and less copper), addressing one of the main limitations of present day particle tracking systems. The latest evolution of the project uses detectors thinned down to 50 mu m to obtain back illuminated sensors operated in full depletion mode. By back processin...

  12. Characterization and acceptance testing of fully depleted thick CCDs for the large synoptic survey telescope

    Science.gov (United States)

    Kotov, Ivan V.; Haupt, Justine; O'Connor, Paul; Smith, Thomas; Takacs, Peter; Neal, Homer; Chiang, Jim

    2016-07-01

    The Large Synoptic Survey Telescope (LSST) camera will be made as a mosaic assembled of 189 large format Charge Coupled Devices (CCD). They are n-channel, 100 micron thick devices operated in the over depleted regime. There are 16 segments, 1 million pixels each, that are read out through separate amplifiers. The image quality and readout speed expected from LSST camera translates into strict acceptance requirements for individual sensors. Prototype sensors and preproduction CCDs were delivered by vendors and they have been used for developing test procedures and protocols. Building upon this experience, two test stands were designed and commissioned at Brookhaven National Laboratory for production electro-optical testing. In this article, the sensor acceptance criteria are outlined and discussed, the test stand design and used equipment are presented and the results from commissioning sensor runs are shown.

  13. Precision Astronomy with Imperfect Fully Depleted CCDs -- An Introduction and a Suggested Lexicon

    CERN Document Server

    Stubbs, Christopher W

    2013-01-01

    This paper summarizes the introductory presentation for a workshop that explored the challenges of making precision astronomical measurements using deeply depleted (thick) CCDs. While thick CCDs provide definite advantages in terms of increased quantum efficiency at NIR wavelengths, and reduced fringing from atmospheric emission lines, these devices also exhibit undesirable features that pose a challenge to precision determination of the positions, fluxes, and shapes of astronomical objects, and features in astronomical spectra. Many of the effects seen in these devices arise from lateral electrical fields within the detector, that produce charge transport anomalies that have been previously misinterpreted as quantum efficiency variations. Performing simplistic flat-fielding introduces systematic errors in the image processing pipeline. One measurement challenge is devising a calibration method that can distinguish genuine quantum efficiency variations from charge transport effects. Given the scientific benef...

  14. The impact of etched trenches geometry and dielectric material on the electrical behaviour of silicon-on-insulator self-switching diodes

    Energy Technology Data Exchange (ETDEWEB)

    Farhi, G; Charlebois, S A [Departement de genie electrique et genie informatique, et Institut interdisciplinaire d' innovation technologique (3IT), Universite de Sherbrooke, 2500, Boulevard de l' Universite, J1K 2R1, Sherbrooke, QC (Canada); Morris, D [Departement de physique et Institut interdisciplinaire d' innovation technologique (3IT), Universite de Sherbrooke, 2500, Boulevard de l' Universite, J1K 2R1, Sherbrooke, QC (Canada); Raskin, J-P, E-mail: ghania.farhi@usherbrooke.ca [Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Universite catholique de Louvain, Place du Levant, 3, B-1348 Louvain-la-Neuve (Belgium)

    2011-10-28

    Hole electrical transport in a p-doped nanochannel defined between two L-shape etched trenches made on a silicon-on-insulator substrate is investigated using a TCAD-Medici simulator. We study the impact of the etched trenches' geometry and dielectric filling materials on the current-voltage characteristics of the device. Carrier accumulation on frontiers defined by the trenches causes a modulation of the hole density inside the conduction channel as the bias voltage varies and this gives rise to a diode-like characteristic. For a 1.2 {mu}m-long channel, plots of the electric field distribution show that a nonlinear transport regime is reached at a moderate reverse and forward bias of {+-} 2 V. Plots of the carrier velocity along the conduction channel show that holes remain hot for a few hundreds of nm outside the nanometre-wide channel, at a bias of {+-} 10 V. Filling the etched trenches with a high-{kappa} dielectric material gives rise to a lower threshold voltage, V{sub th}. A similar decrease of V{sub th} is also achieved by reducing the longitudinal and/or the transverse trench width. Our simulation results provide useful design guidelines for future integrated self-switching-diode-based circuits.

  15. Manipulation of the coherent spatial and angular shifts of Goos-Hänchen effect to realize the digital optical switch in silicon-on-insulator waveguide corner

    Science.gov (United States)

    Sun, DeGui

    2016-11-01

    In this work, based on the quantum process of the Goos-Hänchen (GH) spatial shift, a quantum process of the GH angular shift is also theoretically investigated. Then, the coherence between spatial and angular shifts in the GH effect is discovered and developed to manipulate the final total displacement for a digital optical switch. It is found that a waveguide corner structure always makes the reflected guide-mode have a GH angular shift in the minus direction when the incident beam is in the Brewster angle vicinity, while it always makes the spatial shift in the plus direction. Meanwhile, the coherence of these two GH shifts has an interesting distribution with the incident angle, and only in the common linear response area to the incident angle, the two GH shifts are mutually enhancing, and then a mini refractive index modulation of the guided-mode at the reflecting interface can create a great stable jump of reflected beam displacement at an eigenstate under the GH effect. As a result, on the 220 nm CMOS-compatible silicon-on-insulator waveguide platform, with a tapered multimode interference (MMI) waveguide, a 5 × 1018cm-3 concentration variation of free carriers can create an absolute digital total displacement of 8-25 μm of the reflected beam on the MMI waveguide output end, leading to a 1 × 5 scale digital optical switching function.

  16. An experimental study of solid source diffusion by spin on dopants and its application for minimal silicon-on-insulator CMOS fabrication

    Science.gov (United States)

    Liu, Yongxun; Koga, Kazuhiro; Khumpuang, Sommawan; Nagao, Masayoshi; Matsukawa, Takashi; Hara, Shiro

    2017-06-01

    Solid source diffusions of phosphorus (P) and boron (B) into the half-inch (12.5 mm) minimal silicon (Si) wafers by spin on dopants (SOD) have been systematically investigated and the physical-vapor-deposited (PVD) titanium nitride (TiN) metal gate minimal silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) field-effect transistors (FETs) have successfully been fabricated using the developed SOD thermal diffusion technique. It was experimentally confirmed that a low temperature oxidation (LTO) process which depresses a boron silicide layer formation is effective way to remove boron-glass in a diluted hydrofluoric acid (DHF) solution. It was also found that top Si layer thickness of SOI wafers is reduced in the SOD thermal diffusion process because of its consumption by thermal oxidation owing to the oxygen atoms included in SOD films, which should be carefully considered in the ultrathin SOI device fabrication. Moreover, normal operations of the fabricated minimal PVD-TiN metal gate SOI-CMOS inverters, static random access memory (SRAM) cells and ring oscillators have been demonstrated. These circuit level results indicate that no remarkable particles and interface traps were introduced onto the minimal wafers during the device fabrication, and the developed solid source diffusion by SOD is useful for the fabrication of functional logic gate minimal SOI-CMOS integrated circuits.

  17. Strong room temperature electroluminescence from lateral p-SiGe/i-Ge/n-SiGe heterojunction diodes on silicon-on-insulator substrate

    Science.gov (United States)

    Lin, Guangyang; Yi, Xiaohui; Li, Cheng; Chen, Ningli; Zhang, Lu; Chen, Songyan; Huang, Wei; Wang, Jianyuan; Xiong, Xihuan; Sun, Jiaming

    2016-10-01

    A lateral p-Si0.05Ge0.95/i-Ge/n-Si0.05Ge0.95 heterojunction light emitting diode on a silicon-on-insulator (SOI) substrate was proposed, which is profitable to achieve higher luminous extraction compared to vertical junctions. Due to the high carrier injection ratio of heterostructures and optical reflection at the SiO2/Si interface of the SOI, strong room temperature electroluminescence (EL) at around 1600 nm from the direct bandgap of i-Ge with 0.30% tensile strain was observed. The EL peak intensity of the lateral heterojunction is enhanced by ˜4 folds with a larger peak energy than that of the vertical Ge p-i-n homojunction, suggesting that the light emitting efficiency of the lateral heterojunction is effectively improved. The EL peak intensity of the lateral heterojunction, which increases quadratically with injection current density, becomes stronger for diodes with a wider i-Ge region. The CMOS compatible fabrication process of the lateral heterojunctions paves the way for the integration of the light source with the Ge metal-oxide-semiconductor field-effect-transistor.

  18. High-responsivity vertical-illumination Si/Ge uni-traveling-carrier photodiodes based on silicon-on-insulator substrate

    CERN Document Server

    Li, Chong; Liu, Zhi; Cong, Hui; Cheng, Buwen; Guo, Xia; Liu, Wuming

    2015-01-01

    Si/Ge uni-traveling carrier photodiodes exhibit higher output current when space-charge effects are overcome and thermal effects are suppressed, which is highly beneficial for increasing the dynamic range of various microwave photonic systems and simplifying high-bit-rate digital receivers in different applications. From the point of view of packaging, detectors with vertical-illumination configuration can be easily handled by pick-and-place tools and are a popular choice for making photo-receiver modules. However, vertical-illumination Si/Ge uni-traveling carrier (UTC) devices suffer from inter-constraint between high speed and high responsivity. Here, we report a high responsivity vertical-illumination Si/Ge UTC photodiode based on a silicon-on-insulator substrate. The maximum absorption efficiency of the devices was 2.4 times greater than the silicon substrate owing to constructive interference. The Si/Ge UTC photodiode was successfully fabricated and had a dominant responsivity at 1550 nm of 0.18 A/W, a 5...

  19. Formation of silicon-on-insulator layer with midair cavity for meniscus force-mediated layer transfer and high-performance transistor fabrication on glass

    Science.gov (United States)

    Akazawa, Muneki; Sakaike, Kohei; Higashi, Seiichiro

    2015-08-01

    We attempted to transfer a phosphorus ion (P+)-implanted oxidized silicon-on-insulator (SOI) layer with a midair cavity to a glass substrate using meniscus force at a low temperature. The SiO2 column size was controlled by etching time and the minimum column size was 104 nm. The transfer yield of the implanted sample was significantly improved by decreasing the column size, and the maximum transfer yield was 95% when the implantation dose was 1 × 1015 cm-2. The causes of increasing transfer yield are considered to be the tapered SiO2 column shape and the hydrophilicity of the surface of oxidized samples with implantation. N-channel thin-film transistors (TFTs) fabricated using the films on glass at 300 °C showed a field-effect mobility of 505 cm2 V-1 s-1, a threshold voltage of 2.47 V and a subthreshold swing of 324 mV/dec. on average.

  20. Precision astronomy with imperfect fully depleted CCDs — an introduction and a suggested lexicon

    Science.gov (United States)

    Stubbs, C. W.

    2014-03-01

    This paper summarizes the introductory presentation for a workshop (held Nov 18, 19 2013 at Brookhaven National Laboratory) that explored the challenges associated with making precision astronomical measurements using deeply depleted = ``thick" =``high-ρ'' CCDs. While thick CCDs do provide definite advantages in terms of increased quantum efficiency at wavelengths 700 nm lateral electrical fields within the detector, that produce charge transport anomalies that have been previously misinterpreted as quantum efficiency variations. Performing simplistic flat-fielding therefore introduces systematic errors in the image processing pipeline. One measurement challenge we face is devising a combination of calibration methods and algorithms that can distinguish genuine quantum efficiency variations from charge transport effects. These device imperfections also confront spectroscopic applications, such as line centroid determination for precision radial velocity studies. Given the scientific benefits of improving both the precision and accuracy of astronomical measurements, we need to identify, characterize, and overcome these various detector artifacts. In retrospect, many of the detector features first identified in thick CCDs also afflict measurements made with more traditional CCD detectors, albeit often at a reduced level since the photocharge is subject to the perturbing influence of lateral electric fields for a shorter time interval. I provide a qualitative overview of the physical effects we think are responsible for the observed device properties, and provide some perspective for the work that lies ahead. Finally, I take this opportunity to make a plea for establishing a clear and consistent vocabulary when describing these various detector features, and make some suggestions for a standard lexicon based on discussions at the workshop. A more refined understanding of the device imperfections we are working to circumvent lies ahead, and this workshop was convened

  1. Breakdown voltage model and structure realization of a thin silicon layer with linear variable doping on a silicon on insulator high voltage device with multiple step field plates

    Institute of Scientific and Technical Information of China (English)

    Qiao Ming; Zhuang Xiang; Wu Li-Juan; Zhang Wen-Tong; Wen Heng-Juan; Zhang Bo; Li Zhao-Ji

    2012-01-01

    Based on the theoretical and experimental investigation of a thin silicon layer (TSL) with linear variable doping (LVD) and further research on the TSL LVD with a multiple step field plate (MSFP),a breakdown voltage (BV) model is proposed and experimentally verified in this paper.With the two-dimensional Poisson equation of the silicon on insulator (SOI) device,the lateral electric field in drift region of the thin silicon layer is assumed to be constant.For the SOI device with LVD in the thin silicon layer,the dependence of the BV on impurity concentration under the drain is investigated by an enhanced dielectric layer field (ENDIF),from which the reduced surface field (RESURF) condition is deduced.The drain in the centre of the device has a good self-isolation effect but the problem of the high voltage interconnection (HVI) line will become serious.The two step field plates including the source field plate and gate field plate can be adopted to shield the HVI adverse effect on the device.Based on this model,the TSL LVD SOI n-channel lateral double-diffused MOSFET (nLDMOS) with MSFP is realized.The experimental breakdown voltage (BV) and specific on-resistance (Ron,sp) of the TSL LVD SOI device are 694 V and 21.3 Ω.mm2 with a drift region length of 60 μm,buried oxide layer of 3 μm,and silicon layer of 0.15 μm,respectively.

  2. A proposal for digital electro-optic switches with free-carrier dispersion effect and Goos-Hanchen shift in silicon-on-insulator waveguide corner mirror

    Science.gov (United States)

    Sun, DeGui

    2013-09-01

    In a silicon-on-insulator (SOI) waveguide corner mirror (WCM) structure, with the quantum process of a frustrated total internal reflection (FTIR) phenomenon and the time delay principle in the two-dimensional potential barrier tunneling process of a mass of particles, we derive an accurate physical model for the Goos-Hanchen (GH) shift of optical guided-mode in the FTIR process, and in principle match the GH shift jumping states with the independent guided-modes. Then, we propose and demonstrate a new regime of 1 × N digital optical switches with a matching state between the free-carrier dispersion (FCD) based refractive index modulation (RIM) of silicon to create a GH shift jumping function of a photonic signal at the reflecting interface and the independent guided-modes in the FTIR process, where a MOS-capacitor type electro-optic modulation regime is proposed and discussed to realize an effective FCD-based RIM. At the critical matching state, i.e., the incident of an optical beam is at the vicinity of Brewster angle in the WCM, a mini-change of refractive index of waveguide material can cause a great jump of GH shift along the FTIR reflecting interface, and further a 1 × N digital optical switching process could be realized. For a 350-500 nm single-mode rib waveguide made on the 220 nm CMOS-compatible SOI substrate and with the FCD effect based RIM of silicon crystal, a concentration variation of 1018-1019 cm-3 has caused a 0.5-2.5 μm GH shift of reflected beam, which is at 2-5 times of a mode-size and hence radically convinces an optical switching function with a 1 × 3-1 × 10 scale.

  3. On-chip interrogation of a silicon-on-insulator microring resonator-based ethanol vapor sensor with an arrayed waveguide grating (AWG) spectrometer

    Science.gov (United States)

    Yebo, Nebiyu A.; Bogaerts, Wim; Hens, Zeger; Baets, Roel

    2012-01-01

    Silicon -on -insulator (SOI) optical microring resonators fabricated with the standard CMOS fabrication technology have recently gained considerable attention for energy efficient, compact and low cost biomedical and environmental sensing applications. High sensitivity to the surrounding refractive index variations, high compactness, direct wavelength multiplexing capabilities, simplicity, and the promise for mass fabrication are among the interesting features supported by SOI microring resonators. On the other hand, despite the strong case for microring resonators for sensing, there exist some issues which need to be addressed in order to ensure the feasibility of such sensors. One major limitation currently is the cost of optical sources and /or spectrum analyzers required to drive and interrogate these sensors. Either expensive light sources or spectrum analyzers are usually used with sensors built around microring resonators. An attractive approach to address this problem is the use of on-chip spectrometers along with cheap broadband light sources. We experimentally demonstrate on-chip interrogation of an SOI microring resonator based gas sensor with a compact Arrayed Waveguide Grating (AWG) spectrometer. We have designed and fabricated a 200GHz AWG with strongly overlapping output channels, and used it to interrogate the wavelength shift from a ring resonator based ethanol vapor sensor on the same chip. Ethanol vapor concentrations in 100-1000ppm range are readily detected by monitoring the intensity ratio between two adjacent AWG channels to which the microring resonance overlaps. Such an integrated sensor-interrogator approach is presented as an alternative to the current costly and off-chip read-out systems used for ring resonator based sensors.

  4. Silicon-on-insulator-based high-voltage, high-temperature integrated circuit gate driver for silicon carbide-based power field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Tolbert, Leon M [ORNL; Huque, Mohammad A [ORNL; Blalock, Benjamin J [ORNL; Islam, Syed K [ORNL

    2010-01-01

    Silicon carbide (SiC)-based field effect transistors (FETs) are gaining popularity as switching elements in power electronic circuits designed for high-temperature environments like hybrid electric vehicle, aircraft, well logging, geothermal power generation etc. Like any other power switches, SiC-based power devices also need gate driver circuits to interface them with the logic units. The placement of the gate driver circuit next to the power switch is optimal for minimising system complexity. Successful operation of the gate driver circuit in a harsh environment, especially with minimal or no heat sink and without liquid cooling, can increase the power-to-volume ratio as well as the power-to-weight ratio for power conversion modules such as a DC-DC converter, inverter etc. A silicon-on-insulator (SOI)-based high-voltage, high-temperature integrated circuit (IC) gate driver for SiC power FETs has been designed and fabricated using a commercially available 0.8--m, 2-poly and 3-metal bipolar-complementary metal oxide semiconductor (CMOS)-double diffused metal oxide semiconductor (DMOS) process. The prototype circuit-s maximum gate drive supply can be 40-V with peak 2.3-A sourcing/sinking current driving capability. Owing to the wide driving range, this gate driver IC can be used to drive a wide variety of SiC FET switches (both normally OFF metal oxide semiconductor field effect transistor (MOSFET) and normally ON junction field effect transistor (JFET)). The switching frequency is 20-kHz and the duty cycle can be varied from 0 to 100-. The circuit has been successfully tested with SiC power MOSFETs and JFETs without any heat sink and cooling mechanism. During these tests, SiC switches were kept at room temperature and ambient temperature of the driver circuit was increased to 200-C. The circuit underwent numerous temperature cycles with negligible performance degradation.

  5. Ultra-low power high temperature and radiation hard complementary metal-oxide-semiconductor (CMOS) silicon-on-insulator (SOI) voltage reference.

    Science.gov (United States)

    Boufouss, El Hafed; Francis, Laurent A; Kilchytska, Valeriya; Gérard, Pierre; Simon, Pascal; Flandre, Denis

    2013-12-13

    This paper presents an ultra-low power CMOS voltage reference circuit which is robust under biomedical extreme conditions, such as high temperature and high total ionized dose (TID) radiation. To achieve such performances, the voltage reference is designed in a suitable 130 nm Silicon-on-Insulator (SOI) industrial technology and is optimized to work in the subthreshold regime of the transistors. The design simulations have been performed over the temperature range of -40-200 °C and for different process corners. Robustness to radiation was simulated using custom model parameters including TID effects, such as mobilities and threshold voltages degradation. The proposed circuit has been tested up to high total radiation dose, i.e., 1 Mrad (Si) performed at three different temperatures (room temperature, 100 °C and 200 °C). The maximum drift of the reference voltage V(REF) depends on the considered temperature and on radiation dose; however, it remains lower than 10% of the mean value of 1.5 V. The typical power dissipation at 2.5 V supply voltage is about 20 μW at room temperature and only 75 μW at a high temperature of 200 °C. To understand the effects caused by the combination of high total ionizing dose and temperature on such voltage reference, the threshold voltages of the used SOI MOSFETs were extracted under different conditions. The evolution of V(REF) and power consumption with temperature and radiation dose can then be explained in terms of the different balance between fixed oxide charge and interface states build-up. The total occupied area including pad-ring is less than 0.09 mm2.

  6. Ultra-Low Power High Temperature and Radiation Hard Complementary Metal-Oxide-Semiconductor (CMOS Silicon-on-Insulator (SOI Voltage Reference

    Directory of Open Access Journals (Sweden)

    El Hafed Boufouss

    2013-12-01

    Full Text Available This paper presents an ultra-low power CMOS voltage reference circuit which is robust under biomedical extreme conditions, such as high temperature and high total ionized dose (TID radiation. To achieve such performances, the voltage reference is designed in a suitable 130 nm Silicon-on-Insulator (SOI industrial technology and is optimized to work in the subthreshold regime of the transistors. The design simulations have been performed over the temperature range of -40–200 °C and for different process corners. Robustness to radiation was simulated using custom model parameters including TID effects, such as mobilities and threshold voltages degradation. The proposed circuit has been tested up to high total radiation dose, i.e., 1 Mrad (Si performed at three different temperatures (room temperature, 100 °C and 200 °C. The maximum drift of the reference voltage VREF depends on the considered temperature and on radiation dose; however, it remains lower than 10% of the mean value of 1.5 V. The typical power dissipation at 2.5 V supply voltage is about 20 μW at room temperature and only 75 μ W at a high temperature of 200 °C. To understand the effects caused by the combination of high total ionizing dose and temperature on such voltage reference, the threshold voltages of the used SOI MOSFETs were extracted under different conditions. The evolution of VREF and power consumption with temperature and radiation dose can then be explained in terms of the different balance between fixed oxide charge and interface states build-up. The total occupied area including pad-ring is less than 0.09 mm2.

  7. Determination of thickness and density of a wet multilayer polymer system with sub-nanometer resolution by means of a dual polarization silicon-on-insulator microring

    Science.gov (United States)

    Hoste, J.-W.; De Geest, Bruno G.; Bienstman, Peter

    2015-03-01

    Determination of both thickness and refractive index of a thin biomolecular or polymer layer in wet conditions is a task not easily performed. Available tools such as XPS, AFM, ellipsometry and integrated photonic sensors often have difficulties with the native wet condition of said agents-under-test, perform poorly in the sub-5 nm regime or do not determine both characteristics in an absolute simultaneous way. The thickness of a multilayer system is often determined by averaging over a large amount of layers, obscuring details of the individual layers. Even more, the interesting behavior of the first bound layers can be covered in noise or assumptions might be made on either thickness or refractive index in order to determine the other. To demonstrate a solution to these problems, a silicon-on-insulator (SOI) microring is used to study the adsorption of a bilayer polymer system on the silicon surface of the ring. To achieve this, the microring is simultaneously excited with TE and TM polarized light and by tracking the shifts of both resonant wavelengths, the refractive index and the thickness of the adsorbed layer can be determined with a resolution on thickness smaller than 0.1 nm and a resolution on refractive index smaller than 0.01 RIU. An adhesive polyethyleneimine (PEI) layer is adsorbed to the surface, followed by the adsorption of poly(sodium-4-styrene sulfonate) (PSS) and poly(allylamine) hydrochloride (PAH). This high-resolution performance in wet conditions with the added benefits of the SOI microring platform such as low cost and multiplexibility make for a powerful tool to analyze thin layer systems, which is promising to research binding conformation of proteins as well.

  8. Electrical performance of silicon-on-insulator field-effect transistors with multiple top-gate organic layers in electrolyte solution.

    Science.gov (United States)

    Khamaisi, Bassam; Vaknin, Oshri; Shaya, Oren; Ashkenasy, Nurit

    2010-08-24

    The utilization of field-effect transistor (FET) devices in biosensing applications have been extensively studied in recent years. Qualitative and quantitative understanding of the contribution of the organic layers constructed on the device gate, and the electrolyte media, on the behavior of the device is thus crucial. In this work we analyze the contribution of different organic layers on the pH sensitivity, threshold voltage, and gain of a silicon-on-insulator based FET device. We further monitor how these properties change as function of the electrolyte screening length. Our results show that in addition to electrostatic effects, changes in the amphoteric nature of the surface also affect the device threshold voltage. These effects were found to be additive for the first (3-aminopropyl)trimethoxysilane linker layer and second biotin receptor layer. For the top streptavidin protein layer, these two effects cancel each other. The number and nature of amphoteric groups on the surface, which changes upon the formation of the layers, was shown also to affect the pH sensitivity of the device. The pH sensitivity reduces with the construction of the first two layers. However, after the formation of the streptavidin protein layer, the protein's multiple charged side chains induce an increase in the sensitivity at low ionic strengths. Furthermore, the organic layers were found to influence the device gain due to their dielectric properties, reducing the gain with the successive construction of each layer. These results demonstrate the multilevel influence of organic layers on the behavior of the FET devices.

  9. Stream depletion rate for a radial collector well in an unconfined aquifer near a fully penetrating river

    Science.gov (United States)

    Maroney, Cynthia L.; Rehmann, Chris R.

    2017-04-01

    The stream depletion rate (SDR) is computed for a radial collector well installed in a semi-infinite, anisotropic, homogeneous, unconfined aquifer near a fully penetrating stream with a streambed with reduced conductivity. For small pumping rates dimensional analysis and other arguments allow the SDR to be expressed as a function of eight parameters that describe the effect of properties of the aquifer and streambed as well as the configuration and placement of the well. The calculations employ some results from Huang et al. (2012, J. Hydrol.), who expressed the SDR as a quintuple integral, but by computing four of the integrals analytically, the present solution requires less computational effort. Analytical calculation shows that the SDR in steady state does not depend on the streambed properties (or any other parameters): Given enough time, the flow through the streambed will equal the pumping rate of the well. Values of SDR are supported by comparing to previous solutions for special cases corresponding to appropriate limiting values of the parameters. Effects of the eight dimensionless parameters are studied systematically: The properties of the streambed, anisotropy of the aquifer, and the position of the well affect the SDR more strongly than the orientation, length, and depth of the laterals.

  10. Analysis of Impact of Thermo Optical Effect on a 2×2 Electro-optical Switch in Silicon-on-insulators%SOI电光开关中热光效应分析

    Institute of Scientific and Technical Information of China (English)

    严清峰; 余金中

    2003-01-01

    分析了SOI (silicon-on-insulator)2×2电光开关工作时热光效应对等离子色散效应的影响.采用二维半导体器件模拟器PISCES-Ⅱ对器件进行了模块.结果表明,热光效应对等离子色散效应的影响与调制区长度密切相关,当调制区长度较短时,热光效应的影响不容忽视;当调制区长度大于500 μm时,这种影响可以忽略不计.

  11. Theoretical-Experimental Analysis of the Effects of Grain Boundaries on the Electrical Properties of SOI (Silicon-on-Insulator) MOSFETS.

    Science.gov (United States)

    1983-11-01

    Insulating Substrate", IEEE Electron Device Lett., vol. EDL-l, pp. 206-208, Oct. 1980. 2. B.-Y. Tsaur, M. W. Geis, J. C. C. Fan, D. J. Silversmith , and P...Electron Device Lett., vol. EDL-I, pp. 206-208, Oct. 1980. 3. B.-Y. Tsaur, M. W. Geis, J. C. C. Fan, D. J. Silversmith , and P. W. Mountain, "n-Channel Deep...Lett., vol. EDL-I, pp. 206-208, Oct. 1980. 2. B.-Y. Tsaur, M. W. Geis, J. C. C. Fan, D. J. Silversmith , and R. W. Mountain, "n-Channel Deep-Depletion

  12. Analysis of the breakdown mechanism for an ultra high voltage high-side thin layer silicon-on-insulator p-channel low-density metal-oxide semiconductor

    Institute of Scientific and Technical Information of China (English)

    Zhuang Xiang; Qiao Ming; Zhang Bo; Li Zhao-Ji

    2012-01-01

    This paper discusses the breakdown mechanism and proposes a new simulation and test method of breakdown voltage (BV) for an ultra-high-voltage (UHV) high-side thin layer silicon-on-insulator (SOI) p-channel low-density metaloxide semiconductor (LDMOS).Compared with the conventional simulation method,the new one is more accordant with the actual conditions of a device that can be used in the high voltage circuit.The BV of the SOI p-channel LDMOS can be properly represented and the effect of reduced bulk field can be revealed by employing the new simulation method.Simulation results show that the off-state (on-state) BV of the SOI p-channel LDMOS can reach 741 (620) V in the 3-μm-thick buried oxide layer,50-un-length drift region,and at -400 V back-gate voltage,enabling the device to be used in a 400 V UHV integrated circuit.

  13. Effect of phosphorus ion implantation on back gate effect of partially depleted SOI NMOS under total dose radiation

    Science.gov (United States)

    Leilei, Li; Xinjie, Zhou; Zongguang, Yu; Qing, Feng

    2015-01-01

    The mechanism of improving the TID radiation hardened ability of partially depleted silicon-on-insulator (SOI) devices by using the back-gate phosphorus ion implantation technology is studied. The electron traps introduced in SiO2 near back SiO2/Si interface by phosphorus ions implantation can offset positive trapped charges near the back-gate interface. The implanted high concentration phosphorus ions can greatly reduce the back-gate effect of a partially depleted SOI NMOS device, and anti-total-dose radiation ability can reach the level of 1 Mrad(Si) for experimental devices.

  14. Fabrication of core-shell nanostructures via silicon on insulator dewetting and germanium condensation: towards a strain tuning method for SiGe-based heterostructures in a three-dimensional geometry

    Science.gov (United States)

    Naffouti, Meher; David, Thomas; Benkouider, Abdelmalek; Favre, Luc; Cabie, Martiane; Ronda, Antoine; Berbezier, Isabelle; Abbarchi, Marco

    2016-07-01

    We report on a novel method for the implementation of core-shell SiGe-based nanocrystals combining silicon on insulator dewetting in a molecular beam epitaxy reactor with an ex situ Ge condensation process. With an in situ two-step process (annealing and Ge deposition) we produce two families of islands on the same sample: Si-rich, formed during the first step and, all around them, Ge-rich formed after Ge deposition. By increasing the amount of Ge deposited on the annealed samples from 0 to 18 monolayers, the islands’ shape in the Si-rich zones can be tuned from elongated and flat to more symmetric and with a larger vertical aspect ratio. At the same time, the spatial extension of the Ge-rich zones is progressively increased as well as the Ge content in the islands. Further processing by ex situ rapid thermal oxidation results in the formation of a core-shell composition profile in both Si and Ge-rich zones with atomically sharp heterointerfaces. The Ge condensation induces a Ge enrichment of the islands’ shell of up to 50% while keeping a pure Si core in the Si-rich zones and a ˜25% SiGe alloy in the Ge-rich ones. The large lattice mismatch between core and shell, the absence of dislocations and the islands’ monocrystalline nature render this novel class of nanostructures a promising device platform for strain-based band-gap engineering. Finally, this method can be used for the implementation of ultralarge scale meta-surfaces with dielectric Mie resonators for light manipulation at the nanoscale.

  15. Ultrahigh-efficiency apodized grating coupler using fully etched photonic crystals

    DEFF Research Database (Denmark)

    Ding, Yunhong; Ou, Haiyan; Peucheret, Christophe

    2013-01-01

    We present an efficient method to design apodized grating couplers with Gaussian output profiles for efficient coupling between standard single mode fibers and silicon chips. An apodized grating coupler using fully etched photonic crystal holes on the silicon-on-insulator platform is designed......, and fabricated in a single step of lithography and etching. An ultralow coupling loss of x2212;1.74x2009;x2009;dB (67% coupling efficiency) with a 3xA0;dB bandwidth of 60xA0;nm is experimentally measured....

  16. Preliminary results on low power sigmoid neuron transistor response in 28 nm high-k metal gate Fully Depleted SOI technology

    Science.gov (United States)

    Galy, Ph.; Dehan, P.; Jimenez, J.; Heitz, B.

    2013-11-01

    The purpose of this paper is to describe a preliminary approach to achieve a sigmoid neuron transistor response using the 28 nm high-k metal gate Fully Depleted SOI (FDSOI) technology. It is well known that a neural network is an ambitious way to handle signal and/or data flow. Of interest also is the 'learning phase' of the proposed structure. However, the major difficulty of such structures, where the elementary device is a "Neuron Design (ND)" is in their integration. The elementary ND is based upon a circuit with at least ten interconnected CMOS transistors in order to obtain a sigmoid response activation function (in this example) with multiple inputs typically as per the McCulloch and Pitts model. Given that a large number of NDs are required to build an Artificial Neural Network (ANN), the power consumption of such a structure is a key topic that is also addressed. Another open question concerns the dispersion response due to process variability. This study reports on a new single undoped Formal Neuron Transistor (NT) solution.

  17. 基于绝缘体上硅的一种改进的Mach-Zehnder声光调制器∗%An improved Mach-Zehnder acousto-optic mo dulator on a silicon-on-insulator platform

    Institute of Scientific and Technical Information of China (English)

    秦晨; 余辉; 叶乔波; 卫欢; 江晓清

    2016-01-01

    The interdigital transducer (IDT) of the traditional Mach-Zehnder (MZ) acousto-optic modulator on a silicon-on-insulator (SOI) platform is located outside its two arms. The crest and trough of the surface acoustic wave (SAW) are used to modulate the two arms of the MZ interferometer so as to achieve a high modulation efficiency. Therefore, the distance between the two arms must be odd multiples of half acoustic wavelength. However, since the substrate is usually not uniform, the wavelength of the SAW changes as it transmits through the surface of the device. As a result, the exact distance between the two arms is difficult to choose. On the other hand, the SAW losses a portion of energy after passing through the first arm of the MZ interferometer, so the modulation of the second arm becomes much weaker. To solve these problems, we propose a new structure where its IDT is situated in the middle of the two arms of the MZ interferometer. With this scheme, the two arms of the MZ interferometer are located exactly at the crest and the trough of the SAW, while they are modulated with equal strength. In this paper, we first use the finite element method to simulate the acoustic frequency and the surface displacement of the excited SAW. Then we deduce the refractive index variations of all layers according to their acousto-optic effects. After that, we analyze the influences of different factors on the acousto-optic modulation efficiency, including the type and size of waveguide, the thickness of zinc oxide (ZnO) layer, and the area it covers, the number of electrodes, etc. These parameters are accordingly optimized to enhance the modulation efficiency. Modeling result based on COMSOL Multiphysics indicates that when the width of the strip waveguide is 6 µm, the ZnO layer covers only the area under the IDT and has a thickness of 2.2 µm, and the number of the electrodes is 50, the effective refractive index variation of the waveguide reaches 4.08 × 10−4 provided that

  18. 一种改进的2×2 SOI Mach-Zehnder热光开关%An Improvement on 2×2 Silicon-on-Insulator Mach-Zehnder Thermo-Optical

    Institute of Scientific and Technical Information of China (English)

    杨笛; 余金中; 陈少武

    2008-01-01

    本文设计并制作了基于强限制多模干涉耦合器的2×2 SOI马赫-曾德热光开关.这种光开关采用了深刻蚀结构的多模干涉耦合器和输入/输出波导,较大地提高了干涉耦合器的性能并减少了连接耦合损耗.同时,在调制臂区域采用浅刻蚀结构,保持其单模调制状态.深刻蚀多模干涉耦合器具有优越的特性,在实验中测得不均衡度只有0.03 dB,插入损耗-0.6 dB.基于这种耦合器的新型热光开关,其插入损耗为-6.8 dB,其中包括光纤-波导耦合损耗-4.3 dB,开关时间为6.8 μs.%An improved 2×2 silicon-on-insulator Mach-Zehnder thermo-optical switch is designed and fabricated, which is based on strongly guided multimode interference couplers and single-mode phase-shifting arms. The multimode interference couplers and input/output waveguides are deeply etched to improve coupler performances and coupler-waveguide coupling efficiencies. However, shallow etching is used in the phase-shifting arms to guarantee single-mode property. The strongly guided coupler presents an attractive uniformity about 0.03 dB and a low propagation loss of -0.6 dB. The 2×2 switch shows an insertion loss as low as -6.8 dB, where the fiber-waveguide coupling loss of -4.3 dB is included, and the response-time is measured as short as 6.8 μs, which are much better than our previous results.

  19. 总剂量效应致0.13µm部分耗尽绝缘体上硅N型金属氧化物半导体场效应晶体管热载流子增强效应∗%Enhanced channel hot carrier effect of 0.13 µm silicon-on-insulator N metal-oxide-semiconductor field-effect transistor induced by total ionizing dose effect

    Institute of Scientific and Technical Information of China (English)

    周航; 郑齐文; 崔江维; 余学峰; 郭旗; 任迪远; 余德昭; 苏丹丹

    2016-01-01

    In this paper, a series of hot carriers tests of irradiated 130 nm partially depleted silicon-on-insulator NMOSFETs is carried out in order to explore the HCI influence on the ionizing radiation damage. Some devices are irradiated by up to 3000 Gy before testing the hot carriers, while other devices experience hot carriers test only. All the devices we used in the experiments are fabricated by using a 130 nm partially depleted (PD) SOI technology. The devices each have a 6 nm-thick gate oxide, 100 nm-thick silicon film, and 145 nm-thick buried oxide, with using shallow trench isolation (STI) for isolation scheme. The irradiation experiments are carried by 60Co-γ ray at the Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, with a dose rate of 0.8 Gy(Si)/s. During irradiation all the samples are biased at 3.3 V, i.e., VGS =3.3 V and other pins are grounded, and when the devices are irradiated respectively by total doses of 500, 1000, 2000 and 3000 Gy(Si), we test the characteristic curves again. Then 168-hour room temperature anneal experiments are carried out for the irradiated devices, using the same biases under irradiation. The HCI stress condition is chosen by searching for the maximum substrate current. The cumulative stress time is 5000 s, and the time intervals are 10, 100, 500, 1000 and 5000 s respectively. After each stress interval, the device parameters are measured until stress time termination appears. Through the comparison of characteristic between pre-irradiated and unirradiated devices, we find that the total dose damage results in the enhanced effect of hot carriers: the substrate current value which characterizes the hot carrier effect (for SOI device are the body to the ground current) increases with the increase of total dose, as the pre-irradiated and unirradiated device do under the same conditions of hot carrier stress, the degradations of key electrical parameters are more obvious for the pre-irradiated one

  20. Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs

    Institute of Scientific and Technical Information of China (English)

    Luo Jie-Xin; Chen Jing; Zhou Jian-Hua; Wu Qing-Qing; Chai Zhan; Yu Tao; Wang Xi

    2012-01-01

    The hysteresis effect in the output characteristics,originating from the floating body effect,has been measured in partially depleted(PD)silicon-on-insulator(SOl)MOSFETs at different back-gate biases.ID hysteresis has been developed to clarify the hysteresis characteristics.The fabricated devices show the positive and negative peaks in the ID hysteresis.The experimental results show that the ID hysteresis is sensitive to the back gate bias in 0.13μm PD SOI MOSFETs and does not vary monotonously with the back-gate bias.Based on the steady-state Shoclley-Read Hall(SRH)recombination theory,we have successfully interpreted the impact of the back-gate bias on the hysteresis effect in PD SOl MOSFETs.

  1. Integrated MMI Optical Couplers and Optical Switches in Silicon-on-Insulator Technology%采用绝缘体上的半导体技术制备集成的多模干涉型光耦合器和光开关

    Institute of Scientific and Technical Information of China (English)

    余金中; 魏红振; 严清峰; 夏金松; 张小峰

    2003-01-01

    在光学系统中,SOI(绝缘体上的半导体)上制备集成的MMI(多模干涉)型光耦合器已成为一种愈来愈引人注目的无源器件.由于Si和SiO2之间具有大的折射率差,在SOI波导中可以采用SiO2薄膜(<1.0μm)作限制层,这与超大规模集成电路工艺相兼容.描述了采用SOI技术制备集成的MMI型光耦合器和光开关的设计和制造结果.业已证实,2×2 MMI-MZI(多模干涉-麦赫-曾德干涉)型热光开关的开关时间小于20μs.%Integrated multimode interference (MMI) coupler based on silicon-on-insulator(SOI) has been becoming a kind of more and more attractive device in optical systems. SiO2thin cladding layers (<1.0 μm) can be usedin SOI waveguide due to the large index step be-tween Si and SiO2, making them compatible with VLSI technology. The design and fabrica-tion of MMI optical couplers and optical switches in SOI technology are presented in thepa-per. We demonstrated the switching time of 2 × 2 MMI-MZI thermo-optical switch is less than 20 μs:

  2. Hydrogen interactions with silicon-on-insulator materials

    NARCIS (Netherlands)

    Rivera de Mena, A.J.

    2003-01-01

    The booming of microelectronics in recent decades has been made possible by the excellent properties of the Si/SiO2 interface in oxide on silicon systems.. This semiconductor/insulator combination has proven to be of great value for the semiconductor industry. It has made it possible to continuously

  3. Topology optimized design for silicon-on-insulator mode converter

    DEFF Research Database (Denmark)

    Frellsen, Louise Floor; Frandsen, Lars Hagedorn; Ding, Yunhong

    2015-01-01

    The field of photonic integrated circuits (PICs) has attracted interest in recent years as they allow high device density while requiring only low operating power. The possibility of exploiting mode division multiplexing (MDM) in future optical communication networks is being investigated...... as a potential method for supporting the constantly increasing internet traffic demand [1]. Mode converters are important components necessary to support on-chip processing of MDM signals and multiple approaches has been followed in realizing such devices [2], [3]. Topology optimization (TO) [4] is a powerful...

  4. Integrated Optical Pressure Sensors in Silicon-on-Insulator

    National Research Council Canada - National Science Library

    Hallynck, E; Bienstman, P

    2012-01-01

    .... The silicon substrate is locally etched using KOH to produce very thin membranes of 3.28 μm. Measurements have shown that spectral features in our devices can shift up to 370 pm going from 0 to 80 kPa.

  5. Analytical Modeling of Dual Material Gate SOI MOSFET with Asymmetric Halo

    Institute of Scientific and Technical Information of China (English)

    LI Zun-chao; JIANG Yao-lin; ZHANG Li-li

    2006-01-01

    A dual material gate silicon-on-insulator MOSFET with asymmetrical halo is presented to improve short channel effect and carrier transport efficiency for the first time. The front gate consists of two metal gates with different work functions by making them contacting laterally, and the channel is more heavily doped near the source than in the rest. Using a three-region polynomial potential distribution and a universal boundary condition, a two-dimensional analytical model for the fully depleted silicon-on-insulator MOSFET is developed based on the explicit solution of two-dimensional Poisson's equation. The model includes the calculation of potential distribution along the channel and subthreshold current. The performance improvement of the novel silicon-on-insulator MOSFET is examined and compared with the traditional silicon-on-insulator MOSFET using the analytical model and two-dimensional device simulator MEDICI. It is found that the novel silicon-on-insulator MOSFET could not only suppress short channel effect, but also increase carrier transport efficiency noticeably. The derived analytical model agrees well with MEDICI.

  6. Fully Integrated, Miniature, High-Frequency Flow Probe Utilizing MEMS Leadless SOI Technology

    Science.gov (United States)

    Ned, Alex; Kurtz, Anthony; Shang, Tonghuo; Goodman, Scott; Giemette. Gera (d)

    2013-01-01

    This work focused on developing, fabricating, and fully calibrating a flowangle probe for aeronautics research by utilizing the latest microelectromechanical systems (MEMS), leadless silicon on insulator (SOI) sensor technology. While the concept of angle probes is not new, traditional devices had been relatively large due to fabrication constraints; often too large to resolve flow structures necessary for modern aeropropulsion measurements such as inlet flow distortions and vortices, secondary flows, etc. Mea surements of this kind demanded a new approach to probe design to achieve sizes on the order of 0.1 in. (.3 mm) diameter or smaller, and capable of meeting demanding requirements for accuracy and ruggedness. This approach invoked the use of stateof- the-art processing techniques to install SOI sensor chips directly onto the probe body, thus eliminating redundancy in sensor packaging and probe installation that have historically forced larger probe size. This also facilitated a better thermal match between the chip and its mount, improving stability and accuracy. Further, the leadless sensor technology with which the SOI sensing element is fabricated allows direct mounting and electrical interconnecting of the sensor to the probe body. This leadless technology allowed a rugged wire-out approach that is performed at the sensor length scale, thus achieving substantial sensor size reductions. The technology is inherently capable of high-frequency and high-accuracy performance in high temperatures and harsh environments.

  7. Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers%高剂量注氮对注氧隔离硅材料埋氧层中正电荷密度的影响

    Institute of Scientific and Technical Information of China (English)

    唐海马; 郑中山; 张恩霞; 于芳; 李宁; 王宁娟; 李国花; 马红芝

    2011-01-01

    The influence of nitrogen implantation on the properties of silicon-on-insulator buried oxide using separation by oxygen implantation was studied. Nitrogen ions were implanted into the buried oxide layer with a high-dose of 1016 cm-2.The experimental results showed that the positive charge density of the nitrogen-implanted buried oxide was obviously increased, compared with the control sampes without nitrogen implantation. It was also found that the post-implantation annealing caused an additional increase of the positive charge density in the nitrogen implanted samples. However,annealing time displayed a small effect on the positive charge density of the nitrogen implanted buried oxide, compared with the significant increase induced by nitrogen implantation. Moreover, the capacitance-voltage results showed that the positive charge density of the unannealed sample with nitrogen implanted is approximately equal to that of the sample annealed at 1100 ℃ for 2. 5 h in N2 ambient, despite an additional increase brought with annealing, and the buried oxide of the sample after 0.5 h annealing has a maximum value of positive charge density. According to the simulating results,the nitrogen implantation resulted in a heavy damage to the buried oxide, a lot of silicon and oxygen vacancies were introduced in the buried oxide during implantation. However, the Fourier transform infrared spectroscopy of the samples indicates that implantation induced defects can be basically eliminated after an annealing at 1100 ℃ for 0. 5 h. The increase of the positive charge density of the nitrogen implanted buried oxide is ascribed to the accumulation of implanted nitrogen near the interface of buried oxide and silicon, which caused the break of weak Si - Si bonds and the production of positive silicon ions in the silicon-rich region of the buried oxide near the interface, and this conclusion is supported by the results of secondary ion mass spectrometry.%为研究注氮改性对注氧

  8. New linear sweep technique to measure generation lifetimes in thin-film SOI MOSFET's

    Science.gov (United States)

    Venkatesan, S.; Pierret, R. F.; Neudeck, G. W.

    1994-04-01

    A new linear sweep technique to measure generation lifetimes (tau(sub g)) in silicon-on-insulator (SOI) material is presented. A detailed analytic formulation is applied to fully-depleted and partially-depleted SOI films and used to simulate the behavior of the SOI devices under linear sweep conditions. A novel algorithm accurately determines the effective generation width in fully depleted SOI films. The measurement technique is experimentally verified by applying the algorithm to fully depleted SIMOX P-channel MOSFET's where observed lifetimes ranged from 0.3 mu s to 2.4 mu s.

  9. Non-depletion floating layer in SOI LDMOS for enhancing breakdown voltage and eliminating back-gate bias effect

    Institute of Scientific and Technical Information of China (English)

    Zheng Zhi; Li Wei; Li Ping

    2013-01-01

    A non-depletion floating layer silicon-on-insulator (NFL SOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) is proposed and the NFL-assisted modulated field (NFLAMF) principle is investigated in this paper.Based on this principle,the floating layer can pin the potential for modulating bulk field.In particular,the accumulated high concentration of holes at the bottom of the NFL can efficiently shield the electric field of the SOI layer and enhance the dielectric field in the buried oxide layer (BOX).At variation of back-gate bias,the shielding charges of NFL can alsoeliminate back-gate effects.The simulated results indicate that the breakdown voltage (BV) is increased from 315 V to 558 V compared to the conventional reduced surface field (RESURF) SOI (CSOI) LDMOS,yielding a 77% improvement.Furthermore,due to the field shielding effect of the NFL,the device can maintain the same breakdown voltage of 558 V with a thinner BOX to resolve the thermal problem in an SOI device.

  10. Ultra-low loss fully-etched grating couplers for perfectly vertical coupling compatible with DUV lithography tools

    Science.gov (United States)

    Dabos, G.; Pleros, N.; Tsiokos, D.

    2016-03-01

    Hybrid integration of VCSELs onto silicon-on-insulator (SOI) substrates has emerged as an attractive approach for bridging the gap between cost-effective and energy-efficient directly modulated laser sources and silicon-based PICs by leveraging flip-chip (FC) bonding techniques and silicon grating couplers (GCs). In this context, silicon GCs, should comply with the process requirements imposed by the complimentary-metal-oxide-semiconductor manufacturing tools addressing in parallel the challenges originating from the perfectly vertical incidence. Firstly, fully etched GCs compatible with deep-ultraviolet lithography tools offering high coupling efficiencies are imperatively needed to maintain low fabrication cost. Secondly, GC's tolerance to VCSEL bonding misalignment errors is a prerequisite for practical deployment. Finally, a major challenge originating from the perfectly vertical coupling scheme is the minimization of the direct back-reflection to the VCSEL's outgoing facet which may destabilize its operation. Motivated from the above challenges, we used numerical simulation tools to design an ultra-low loss, bidirectional VCSEL-to-SOI optical coupling scheme for either TE or TM polarization, based on low-cost fully etched GCs with a Si-layer of 340 nm without employing bottom reflectors or optimizing the buried-oxide layer. Comprehensive 2D Finite-Difference-Time- Domain simulations have been performed. The reported GC layout remains fully compatible with the back-end-of-line (BEOL) stack associated with the 3D integration technology exploiting all the inter-metal-dielectric (IMD) layers of the CMOS fab. Simulation results predicted for the first time in fully etched structures a coupling efficiency of as low as -0.87 dB at 1548 nm and -1.47 dB at 1560 nm with a minimum direct back-reflection of -27.4 dB and -14.2 dB for TE and TM polarization, respectively.

  11. Comparison between bulk and FDSOI POM flash cell: a multiscale simulation study

    OpenAIRE

    Georgiev, Vihar P.; Amoroso, Salvatore Maria; Ali, Talib Mahmood; Vila-Nadal, Laia; Busche, Christoph; Cronin, Leroy; Asen ASENOV

    2015-01-01

    In this brief, we present a multiscale simulation study of a fully depleted silicon-on-insulator (FDSOI) nonvolatile memory cell based on polyoxometalates (POMs) inorganic molecular clusters used as a storage media embedded in the gate dielectric of flash cells. In particular, we focus our discussion on the threshold voltage variability introduced by random discrete dopants (random dopant fluctuation) and by fluctuations in the distribution of the POM molecules in the storage media (POM fluct...

  12. Ozone Depletion by Hydrofluorocarbons

    Science.gov (United States)

    Hurwitz, M.; Fleming, E. L.; Newman, P. A.; Li, F.; Mlawer, E. J.; Cady-Pereira, K. E.; Bailey, R.

    2015-12-01

    Hydrofluorocarbons (HFCs) are second-generation replacements for the chlorofluorocarbons (CFCs), halons and other substances that caused the 'ozone hole'. Atmospheric concentrations of HFCs are projected to increase dramatically in the coming decades. Coupled chemistry-climate simulations forced by these projections show that HFCs will impact the global atmosphere in 2050. As strong radiative forcers, HFCs modulate atmospheric temperature, thereby changing ozone-destroying catalytic cycles and enhancing the stratospheric circulation. These changes lead to a weak depletion of stratospheric ozone. Sensitivity simulations with the NASA Goddard Space Flight Center (GSFC) 2D model show that HFC-125 is the most important contributor to atmospheric change in 2050, as compared with HFC-23, HFC-32, HFC-134a and HFC-143a. Incorporating the interactions between chemistry, radiation and dynamics, for a likely 2050 climate, ozone depletion potentials (ODPs) for HFCs range from 4.3x10-4 to 3.5x10-2; previously HFCs were assumed to have negligible ODPs since these species lack chlorine or bromine atoms. The ozone impacts of HFCs are further investigated with the Goddard Earth Observing System Chemistry-Climate Model (GEOSCCM). The GEOSCCM is a three-dimensional, fully coupled ocean-atmosphere model with interactive stratospheric chemistry. Sensitivity simulations in which CO2, CFC-11 and HCFC-22 are enhanced individually are used as proxies for the atmospheric response to the HFC concentrations expected by the mid-21st century. Sensitivity simulations provide quantitative estimates of the impacts of these greenhouse gases on global total ozone, and can be used to assess their effects on the recovery of Antarctic ozone.

  13. Intrinsic Depletion or Not

    DEFF Research Database (Denmark)

    Klösgen, Beate; Bruun, Sara; Hansen, Søren;

      The presence of a depletion layer of water along extended hydrophobic interfaces, and a possibly related formation of nanobubbles, is an ongoing discussion. The phenomenon was initially reported when we, years ago, chose thick films (~300-400Å) of polystyrene as cushions between a crystalline...... giving rise to depletion layers, and the mechanisms and border conditions that control their presence and extension require still clarification. Recently, careful systematic reflectivity experiments were re-done on the same system. No depletion layers were found, and it was conjectured that the whole...

  14. Anatomy of Depleted Interplanetary Coronal Mass Ejections

    Science.gov (United States)

    Kocher, M.; Lepri, S. T.; Landi, E.; Zhao, L.; Manchester, W. B., IV

    2017-01-01

    We report a subset of interplanetary coronal mass ejections (ICMEs) containing distinct periods of anomalous heavy-ion charge state composition and peculiar ion thermal properties measured by ACE/SWICS from 1998 to 2011. We label them “depleted ICMEs,” identified by the presence of intervals where C6+/C5+ and O7+/O6+ depart from the direct correlation expected after their freeze-in heights. These anomalous intervals within the depleted ICMEs are referred to as “Depletion Regions.” We find that a depleted ICME would be indistinguishable from all other ICMEs in the absence of the Depletion Region, which has the defining property of significantly low abundances of fully charged species of helium, carbon, oxygen, and nitrogen. Similar anomalies in the slow solar wind were discussed by Zhao et al. We explore two possibilities for the source of the Depletion Region associated with magnetic reconnection in the tail of a CME, using CME simulations of the evolution of two Earth-bound CMEs described by Manchester et al.

  15. Addressing Ozone Layer Depletion

    Science.gov (United States)

    Access information on EPA's efforts to address ozone layer depletion through regulations, collaborations with stakeholders, international treaties, partnerships with the private sector, and enforcement actions under Title VI of the Clean Air Act.

  16. High-reflectivity high-contrast grating focusing reflector on silicon-on-insulator wafer

    Science.gov (United States)

    Fang, Wenjing; Huang, Yongqing; Duan, Xiaofeng; Liu, Kai; Fei, Jiarui; Ren, Xiaomin

    2016-11-01

    A high-contrast grating (HCG) focusing reflector providing phase front control of reflected light and high reflectivity is proposed and fabricated. Basic design rules to engineer this category of structures are given in detail. A 1550 nm TM polarized incident light of 11.86 mm in focal length and 0.8320 in reflectivity is obtained in experiment. The wavelength dependence of the fabricated HCGs from 1530 nm to 1580 nm is also tested. The test results show that the focal length is in the range of 11.81-12 mm, which is close to the designed focal length of 15 mm. The reflectivity is almost above 0.56 within a bandwidth of 50 nm. At a distance of 11.86 mm, the light is focused to a round spot with the highest concentration, which is much smaller than the size of the incident beam. The FWHM of the reflected light beam decreases to 120 nm, and the intensity increases to 1.18. Project supported by the National Natural Science Foundation of China (Grant Nos. 61274044, 61574019 and 61020106007), the National Basic Research Program of China (Grant No. 2010CB327600), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20130005130001), the Natural Science Foundation of Beijing, China (Grant No. 4132069), the Key International Science and Technology Cooperation Project of China (Grant No. 2011RR000100), the 111 Project of China (Grant No. B07005), and the Program for Changjiang Scholars and Innovative Research Team in Universities of China (Grant No. IRT0609).

  17. Novel Applications of a Thermally Tunable Bistable Buckling Silicon-on-Insulator (SOI) Microfabricated Membrane

    Science.gov (United States)

    2015-09-17

    friendship . Without his assistance, none of this would have been possible. Next, thank you to all my fellow MEMS group students, past and present. Having...55 IPA isopropyl alcohol ...reactive ion etching (DRIE). size of these scallops can be controlled by adjusting the process parameters. Scallop depth is most prominently affected

  18. Raman amplification of Stokes pulse in ultra-small silicon on-insulator optical waveguide

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    The stimulated Raman amplification of picosecond Stokes pulse is numerically investigated in ultra-small silicon-oninsulator optical waveguide. Numerical results show that we obtain the gain of up to 30-dB for weak Stokes pulse in the copropagation configuration for 10 mm Jength waveguide using high intensity pump optical pulse. The peak gain, pulse width, rise time, and fall time of Stokes pulse will experience the variation course of decaying then increasing with increasing waveguide length. The time delay of output Stokes pulse is controlled by adjusting the initial time delay of both pump and Stokes pulses.

  19. Topology optimized mode multiplexing in silicon-on-insulator photonic wire waveguides

    DEFF Research Database (Denmark)

    Frellsen, Louise Floor; Ding, Yunhong; Sigmund, Ole;

    2016-01-01

    We design and experimentally verify a topology optimized low-loss and broadband two-mode (de-)multiplexer, which is (de-)multiplexing the fundamental and the first-order transverse-electric modes in a silicon photonic wire. The device has a footprint of 2.6 μm x 4.22 μm and exhibits a loss 14 dB ...

  20. Optical and thermal properties of periodic photonic structures on a silicon-on-insulator platform

    Science.gov (United States)

    Song, Weiwei

    Silicon photonics is the leading candidate to fulfill the high bandwidth requirement for the future communication networks. Periodic photonic structures, due to their fascinating properties including compact size, high efficiency, and ease of design, play an important role in photonic systems. In this dissertation, SOI-based one-dimensional and two-dimensional periodic photonic structures are studied. Low crosstalk, high density integration of bus waveguides is demonstrated by employing a novel waveguide array structure. Inspired by the low coupling strength shown by initial pair waveguide experiments, novel waveguide array structures are studied by generalizing the nearest-neighbor tight-bonding model. Based on the theory, waveguide arrays have been designed and fabricated. The waveguide arrays have been characterized to demonstrate high density bus waveguides with minimal crosstalk. Two-dimensional photonic crystal waveguide (PCW) structure was then investigated aiming at reducing the propagation loss. A general cross-sectional eigenmode orthogonality relation is first derived for a one dimensional periodic system. Assisted by this orthogonality, analytic formulas are obtained to describe the propagation loss in PCW structures. By introducing the radiation and backscattering loss factors alpha1 and alpha2, the total loss coefficient alpha can be written as alpha = alpha1ng + alpha2ng2 ( ng is the group index). It is analytically shown the backscattering loss generally dominates the radiation loss for ng>10. Combined with systematic simulations of loss dependences on key structure parameters, this analytic study helps identify promising strategies to reduce the slow light loss. The influence of the substrate on the performance of a thermo-optic tuning photonic crystal device was studied in the following section. The substrate-induced thermo-optic tuning is obtained as a function of key physical parameters, based on a semi-analytic theory that agrees well with numeric simulations. It is shown that for some devices, the substrate's contribution to the thermo-optic tuning can exceed 10% for a heater located in the waveguide core and much higher for some other configurations. The slow response of the substrate may also significantly slow down the overall response time of the device. Strategies of minimizing the substrate's influence are discussed.

  1. Photoconductive multi-layer graphene photodetectors fabricated on etched silicon-on-insulator substratesr

    Science.gov (United States)

    Wang, Yu-Bing; Yin, Wei-Hong; Han, Qin; Yang, Xiao-Hong; Ye, Han; Lv, Qian-Qian; Yin, Dong-Dong

    2017-02-01

    Not Available Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0402404), the High-Tech Research and Development Program of China (Grant Nos. 2013AA031401, 2015AA016902, and 2015AA016904), and the National Natural Science Foundation of China (Grant Nos. 61674136, 61176053, 61274069, and 61435002).

  2. Mode conversion losses in silicon-on-insulator photonic wire based racetrack resonators.

    Science.gov (United States)

    Xia, Fengnian; Sekaric, Lidija; Vlasov, Yurii A

    2006-05-01

    Two complimentary types of SOI photonic wire based devices, the add/drop (A/D) filter using a racetrack resonator and the Mach-Zehnder interferometer with one arm consisting of an identical resonator in all-pass filter (APF) configuration, were fabricated and characterized in order to extract the optical properties of the resonators and predict the performance of the optical delay lines based on such resonators. We found that instead of well-known waveguide bending and propagation losses, mode conversion loss in the coupling region of such resonators dominates when the air gap between the racetrack resonator and access waveguide is smaller than 120nm. We also show that this additional loss significantly degrades the performance of the optical delay line containing cascaded resonators in APF configuration.

  3. Structure Tuning of Line-Defect Waveguides Based on Silicon-on-Insulator Photonic Crystal Slabs

    Institute of Scientific and Technical Information of China (English)

    WANG Chun-Xia; XU Xing-Sheng; XIONG Gui-Guang; HU Hai-Yang; SONG Qian; DU Wei; CHEN Hong-Da

    2007-01-01

    We present fabrication and experimental measurement of a series of photonic crystal waveguides. The complete devices consist of an injector taper down from 3 μm into a triangular-lattice air-hole single-line-defect waveguide with lattice constant from 410nm to 470nm and normalized radius 0.31. We fabricate these devices on a siliconon-insulator substrate and characterize them using a tunable laser source over a wavelength range from 1510 nm to 1640nm. A sharp attenuation at photonic crystal waveguide mode edge is observed for most structures. The edge of guided band is shifted about 30nm with the 10nm increase of the lattice constant. We obtain high-efficiency light propagation and broad flat spectrum response of the photonic crystal waveguides.

  4. Performance improvement to silicon-on-insulator waveguide directional-coupler based devices

    Science.gov (United States)

    Sun, DeGui; Hasan, Imad; Abdul-Majid, Sawsan; Vandusen, Rob; Zheng, Qi; Hussien, Ali; Wang, Chunxia; Hu, Zhongming; Tarr, T. Garry; Hall, Trevor J.

    2010-10-01

    For the SOI-waveguide directional coupler (WDC), optical access loss (OAL) and polarization dependence (PD) are two critical performance specifications which seriously affect the adoptability and deployment of a device, including optical on-chip loss (OCL), polarization dependent loss (PDL) and extinction ratio of a 3dB-coupler based device. In this work, using a commercial software tool - FIMMPROP, the performance of an SOI-WDC is simulated. Simulations find that the curved waveguides for the turning sections of a 3dB WDC not only enlarge the footprint size, but also seriously deteriorate the device performance. For instance, the two curved waveguide sections of a WDC induce an unpredictably large change in the 3dB-coupling length, increase an OAL of 0.4-0.9dB, and seriously deteriorate the PD, and these performance changes radically depend on rib size. After a corner-turning mirror (CTM) structure is introduced to a 3dB SOI-WDC, the experiments show both the footprint length and 3dB-coupling length are unchanged, the OAL of the 3dB coupler is only 0.5dB which is close to the simulation value. Therefore, for a 3dB-coupler based Mach-Zehnder interference (MZI) structure, the OCL will be controlled to be <1.0dB in device design and will not depend on rib size.

  5. Synthesis of buried silicon oxynitride layers by ion implantation for silicon-on-insulator (SOI) structures

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, A.D. [Department of Physics, University of Mumbai, Vidyanagari Campus, Santacruz (E), Mumbai 400 098 (India)]. E-mail: adyadav@physics.mu.ac.in; Polji, Rucha H. [Department of Physics, University of Mumbai, Vidyanagari Campus, Santacruz (E), Mumbai 400 098 (India); Singh, Vibha [Department of Physics, University of Mumbai, Vidyanagari Campus, Santacruz (E), Mumbai 400 098 (India); Dubey, S.K. [Department of Physics, University of Mumbai, Vidyanagari Campus, Santacruz (E), Mumbai 400 098 (India); Gundu Rao, T.K. [Regional Sophisticated Instrumentation Center, IIT Bombay, Powai, Mumbai 400 076 (India)

    2006-04-15

    Silicon oxynitride (Si {sub x}O {sub y}N {sub z}) buried insulating layers were synthesized by SIMNOX (separation by implanted nitrogen-oxygen) process by {sup 14}N{sup +} and {sup 16}O{sup +} ion implantation to high fluence levels 1 x 10{sup 17}, 2.5 x 10{sup 17} and 5 x 10{sup 17} ions cm{sup -2} sequentially in the ratio 1:1 at 150 keV into p-type (1 0 0) silicon wafers. The identification of structures and defects in the ion beam synthesized buried layers were carried out by FTIR, XRD and ESR measurements before and after RTA treatments at different temperatures in nitrogen ambient. The FTIR spectra show single broad absorption band in the wavenumber range 1250-600 cm{sup -1} confirming the formation of silicon oxynitride. The integrated absorption band intensity is found to increase with increasing ion fluence and on annealing indicating gradual chemical transformation of the ion implanted layer into silicon oxynitride. The XRD data of the implanted samples show the formation of Si{sub 2}N{sub 2}O (O) phase of silicon oxynitride. On annealing the samples, SiO{sub 2} (H)/Si{sub 3}N{sub 4} (H) phases are also formed in addition to Si{sub 2}N{sub 2}O (O) phase. The concentration of the formed phases is found to increase with increase in the ion fluence as well as the annealing temperature. The ESR studies both at room temperature and at low temperatures reveal the presence of a defect center associated with silicon dangling bonds. The increase in ion fluence gives rise to small variations in g-values and increase in the spin density. The spin density decreases in general with increasing the annealing temperature.

  6. Guided Acoustic and Optical Waves in Silicon-on-Insulator for Brillouin Scattering and Optomechanics

    Science.gov (United States)

    2016-08-01

    environment, they also isolate devices from heat-dissipating thermal linkages and on-chip electronics. The intuition of “index-guided” confinement of...coupling. Consider the optical guided modes for 100 nm wide fins spaced 40 nm apart in 340 nm thick silicon shown in Figure 2(b). For these

  7. Silicon-on-Insulator-Based Compact Optical Demultiplexer Employing Etched Diffraction Grating

    Institute of Scientific and Technical Information of China (English)

    WANG Wen-Hui; TANG Yan-Zhe; WANG Yun-Xiang; QU Hong-Chang; WU Ya-Ming; LI Tie; YANG Jian-Yi; WANG Yue-Lin; LIU Ming

    2004-01-01

    A compact optical demultiplexer with etched diffraction grating (EDG) is designed and fabricated on a siliconon-insulator (SOI) material. Several 90° turning mirrors are used to bend the waveguides, and the size of the EDG-based demultiplexer is minimized to only 16 × 1.7mm2. The crosstalk is about -18 dB. The on-chip loss is about 18.2dB, which is composed of about 16.9dB excess loss and 1.3dB diffraction loss. Measures to improve the performance are discussed.

  8. Intrinsic Depletion or Not

    DEFF Research Database (Denmark)

    Klösgen, Beate; Bruun, Sara; Hansen, Søren;

    with an AFM (2).    The intuitive explanation for the depletion based on "hydrophobic mismatch" between the obviously hydrophilic bulk phase of water next to the hydrophobic polymer. It would thus be an intrinsic property of all interfaces between non-matching materials. The detailed physical interaction path......  The presence of a depletion layer of water along extended hydrophobic interfaces, and a possibly related formation of nanobubbles, is an ongoing discussion. The phenomenon was initially reported when we, years ago, chose thick films (~300-400Å) of polystyrene as cushions between a crystalline...

  9. Shear-affected depletion interaction

    NARCIS (Netherlands)

    July, C.; Kleshchanok, D.; Lang, P.R.

    2012-01-01

    We investigate the influence of flow fields on the strength of the depletion interaction caused by disc-shaped depletants. At low mass concentration of discs, it is possible to continuously decrease the depth of the depletion potential by increasing the applied shear rate until the depletion force i

  10. A Monolithic active pixel sensor for ionizing radiation using a 180nm HV-SOI process

    OpenAIRE

    Hemperek, Tomasz; Kishishita, Tetsuichi; Krüger, Hans; Wermes, Norbert

    2014-01-01

    An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-film High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer. FD-SOI MAPS suffer from radiation damage such as transistor threshold voltage shifts due to ch...

  11. Depletion of intense fields

    CERN Document Server

    Seipt, D; Marklund, M; Bulanov, S S

    2016-01-01

    The interaction of charged particles and photons with intense electromagnetic fields gives rise to multi-photon Compton and Breit-Wheeler processes. These are usually described in the framework of the external field approximation, where the electromagnetic field is assumed to have infinite energy. However, the multi-photon nature of these processes implies the absorption of a significant number of photons, which scales as the external field amplitude cubed. As a result, the interaction of a highly charged electron bunch with an intense laser pulse can lead to significant depletion of the laser pulse energy, thus rendering the external field approximation invalid. We provide relevant estimates for this depletion and find it to become important in the interaction between fields of amplitude $a_0 \\sim 10^3$ and electron bunches with charges of the order of nC.

  12. Learning about ozone depletion

    Energy Technology Data Exchange (ETDEWEB)

    Crutzen, J. P. [Department of Atmospheric Chemistry, Max Planck Institute for Chemistry, Mainz, Germany; Oppenheimer M. [Woodrow Wilson School of Public and International Affairs, Department of Geosciences, Princeton University, Princeton, NJ (United States)

    2008-07-15

    Stratospheric ozone depletion has been much studied as a case history in the interaction between environmental science and environmental policy. The positive influence of science on policy is often underscored, but here we review the photochemistry of ozone in order to illustrate how scientific learning has the potential to mislead policy makers. The latter may occur particularly in circumstances where limited observations are combined with simplified models of a complex system, such as may generally occur in the global change arena. Even for the well-studied case of ozone depletion, further research is needed on the dynamics of scientific learning, particularly the scientific assessment process, and how assessments influence the development of public policy.

  13. Depletion of Intense Fields

    Science.gov (United States)

    Seipt, D.; Heinzl, T.; Marklund, M.; Bulanov, S. S.

    2017-04-01

    The interaction of charged particles and photons with intense electromagnetic fields gives rise to multiphoton Compton and Breit-Wheeler processes. These are usually described in the framework of the external field approximation, where the electromagnetic field is assumed to have infinite energy. However, the multiphoton nature of these processes implies the absorption of a significant number of photons, which scales as the external field amplitude cubed. As a result, the interaction of a highly charged electron bunch with an intense laser pulse can lead to significant depletion of the laser pulse energy, thus rendering the external field approximation invalid. We provide relevant estimates for this depletion and find it to become important in the interaction between fields of amplitude a0˜1 03 and electron bunches with charges of the order of 10 nC.

  14. Ozone-depleting Substances (ODS)

    Data.gov (United States)

    U.S. Environmental Protection Agency — This site includes all of the ozone-depleting substances (ODS) recognized by the Montreal Protocol. The data include ozone depletion potentials (ODP), global warming...

  15. Android Fully Loaded

    CERN Document Server

    Huddleston, Rob

    2012-01-01

    Fully loaded with the latest tricks and tips on your new Android! Android smartphones are so hot, they're soaring past iPhones on the sales charts. And the second edition of this muscular little book is equally impressive--it's packed with tips and tricks for getting the very most out of your latest-generation Android device. Start Facebooking and tweeting with your Android mobile, scan barcodes to get pricing and product reviews, download your favorite TV shows--the book is positively bursting with practical and fun how-tos. Topics run the gamut from using speech recognition, location-based m

  16. On Fully Homomorphic Encryption

    OpenAIRE

    Fauzi, Prastudy

    2012-01-01

    Fully homomorphic encryption is an encryption scheme where a party can receive encrypted data and perform arbitrary operations on this data efficiently.The data remains encrypted throughout, but the operations can be done regardless, without having to know the decryption key.Such a scheme would be very advantageous, for example in ensuring the privacy of data that is sent to a third-party service.This is in contrast with schemes like Paillier where you can not perform a multiplication of encr...

  17. Fully Awake Breast Reduction.

    Science.gov (United States)

    Filson, Simon A; Yarhi, Danielle; Ramon, Yitzhak

    2016-11-01

    The authors present 25 cases and an in-depth 4-minute video of fully awake aesthetic breast reduction, which was made possible by thoracic epidural anesthesia. There are obvious and important advantages to this technique. Not only does this allow for intraoperative patient cooperation (i.e., patient self-positioning and opinion for comparison of breasts), meaning a shorter and more efficient intraoperative time, there also is a reduction in postoperative pain, complications, recovery, and discharge times. The authors have also enjoyed great success and no complications with this technique in over 150 awake abdominoplasty/total body lift patients. The authors feel that the elimination of the need for general anesthesia by thoracic epidural sensorial-only anesthesia is a highly effective and efficient technique, with very few disadvantages/complications, providing advantages to both patients and surgeons. Therapeutic, IV.

  18. Fully electric waste collection

    CERN Multimedia

    Anaïs Schaeffer

    2015-01-01

    Since 15 June, Transvoirie, which provides waste collection services throughout French-speaking Switzerland, has been using a fully electric lorry for its collections on the CERN site – a first for the region!   Featuring a motor powered by electric batteries that charge up when the brakes are used, the new lorry that roams the CERN site is as green as can be. And it’s not only the motor that’s electric: its waste compactor and lifting mechanism are also electrically powered*, making it the first 100% electric waste collection vehicle in French-speaking Switzerland. Considering that a total of 15.5 tonnes of household waste and paper/cardboard are collected each week from the Meyrin and Prévessin sites, the benefits for the environment are clear. This improvement comes as part of CERN’s contract with Transvoirie, which stipulates that the firm must propose ways of becoming more environmentally friendly (at no extra cost to CERN). *The was...

  19. A Comparative Study on SOI MOSFETs for Low Power Applications

    Directory of Open Access Journals (Sweden)

    Khairul Affendi Rosli

    2013-03-01

    Full Text Available Silicon on Insulator (SOI technology has become one of the most promising technologies in semiconductor fabrication industry for its numerous advantages. This study presents merits and demerits of different SOIs presented in literatures and a comparative study is done based on several design and performance issues for low power applications. From the study it is found that Fully Depleted SOI MOSFET (FDSOI technology is preferred due to its thin size, reduced leakage current and improved power consumption characteristics etc. compared to those of PDSOI and bulk silicon technology.

  20. Strain effect on mobility in nanowire MOSFETs down to 10 nm width: Geometrical effects and piezoresistive model

    Science.gov (United States)

    Pelloux-Prayer, J.; Cassé, M.; Triozon, F.; Barraud, S.; Niquet, Y.-M.; Rouvière, J.-L.; Faynot, O.; Reimbold, G.

    2016-11-01

    The effect of strain on carrier mobility in triple gate Fully Depleted Silicon On Insulator (FDSOI) nanowires (NWs) is experimentally investigated through piezoresistance measurements. The piezoresitive coefficients have been extracted and analyzed for rectangular cross-section with varying aspect ratio (width vs. height). We propose an empirical model based on mobility separation between top and sidewall conduction surfaces of the NWs, and on the carrier density calculation in the cross-section of the NWs. The model allows fitting the piezoresistive coefficients and the carrier mobility for the different device geometries. We highlight an enhanced strain effect for Trigate nanowires with channel thickness below 11 nm.

  1. Investigation of tunnel field-effect transistors as a capacitor-less memory cell

    Science.gov (United States)

    Biswas, Arnab; Dagtekin, Nilay; Grabinski, Wladyslaw; Bazigos, Antonios; Le Royer, Cyrille; Hartmann, Jean-Michel; Tabone, Claude; Vinet, Maud; Ionescu, Adrian M.

    2014-03-01

    In this work, we report experimental results on the use of tunnel field-effect transistors as capacitorless dynamic random access memory cells, implemented as double-gate fully depleted silicon-on-insulator devices. The devices have an asymmetric design, with a partial overlap of the top gate (LG) and with a total overlap of the back gate over the channel region (LG + LIN). A potential well is created by biasing the back gate (VBG) in accumulation, while the front gate (VFG) is in inversion. Holes from the p+ source are injected by the forward-biased p+ i junction and stored in the electrically induced potential well.

  2. Back-gate effects and mobility characterization in junctionless transistor

    Science.gov (United States)

    Parihar, Mukta Singh; Liu, Fanyu; Navarro, Carlos; Barraud, Sylvain; Bawedin, Maryline; Ionica, Irina; Kranti, Abhinav; Cristoloveanu, Sorin

    2016-11-01

    This work addresses the effect of inter-gate coupling on back-channel characteristics of planar accumulation-mode junctionless (JL) MOSFETs, fabricated with advanced Fully Depleted Silicon-on-Insulator (FDSOI) technology. A systematic methodology to extract and distinguish the contributions of bulk and accumulation-mode mobility has been developed. Front-gate voltage strongly controls the transport properties of back channel in ultra-thin heavily doped JL devices. It is demonstrated that both volume and accumulation-layer mobility values increase when the front interface is in accumulation.

  3. Depleted zinc: Properties, application, production.

    Science.gov (United States)

    Borisevich, V D; Pavlov, A V; Okhotina, I A

    2009-01-01

    The addition of ZnO, depleted in the Zn-64 isotope, to the water of boiling water nuclear reactors lessens the accumulation of Co-60 on the reactor interior surfaces, reduces radioactive wastes and increases the reactor service-life because of the inhibitory action of zinc on inter-granular stress corrosion cracking. To the same effect depleted zinc in the form of acetate dihydrate is used in pressurized water reactors. Gas centrifuge isotope separation method is applied for production of depleted zinc on the industrial scale. More than 20 years of depleted zinc application history demonstrates its benefits for reduction of NPP personnel radiation exposure and combating construction materials corrosion.

  4. Asymmetric spindle pole formation in CPAP-depleted mitotic cells.

    Science.gov (United States)

    Lee, Miseon; Chang, Jaerak; Chang, Sunghoe; Lee, Kyung S; Rhee, Kunsoo

    2014-02-21

    CPAP is an essential component for centriole formation. Here, we report that CPAP is also critical for symmetric spindle pole formation during mitosis. We observed that pericentriolar material between the mitotic spindle poles were asymmetrically distributed in CPAP-depleted cells even with intact numbers of centrioles. The length of procentrioles was slightly reduced by CPAP depletion, but the length of mother centrioles was not affected. Surprisingly, the young mother centrioles of the CPAP-depleted cells are not fully matured, as evidenced by the absence of distal and subdistal appendage proteins. We propose that the selective absence of centriolar appendages at the young mother centrioles may be responsible for asymmetric spindle pole formation in CPAP-depleted cells. Our results suggest that the neural stem cells with CPAP mutations might form asymmetric spindle poles, which results in premature initiation of differentiation.

  5. Ego depletion impairs implicit learning.

    Science.gov (United States)

    Thompson, Kelsey R; Sanchez, Daniel J; Wesley, Abigail H; Reber, Paul J

    2014-01-01

    Implicit skill learning occurs incidentally and without conscious awareness of what is learned. However, the rate and effectiveness of learning may still be affected by decreased availability of central processing resources. Dual-task experiments have generally found impairments in implicit learning, however, these studies have also shown that certain characteristics of the secondary task (e.g., timing) can complicate the interpretation of these results. To avoid this problem, the current experiments used a novel method to impose resource constraints prior to engaging in skill learning. Ego depletion theory states that humans possess a limited store of cognitive resources that, when depleted, results in deficits in self-regulation and cognitive control. In a first experiment, we used a standard ego depletion manipulation prior to performance of the Serial Interception Sequence Learning (SISL) task. Depleted participants exhibited poorer test performance than did non-depleted controls, indicating that reducing available executive resources may adversely affect implicit sequence learning, expression of sequence knowledge, or both. In a second experiment, depletion was administered either prior to or after training. Participants who reported higher levels of depletion before or after training again showed less sequence-specific knowledge on the post-training assessment. However, the results did not allow for clear separation of ego depletion effects on learning versus subsequent sequence-specific performance. These results indicate that performance on an implicitly learned sequence can be impaired by a reduction in executive resources, in spite of learning taking place outside of awareness and without conscious intent.

  6. Depletable resources and the economy.

    NARCIS (Netherlands)

    Heijman, W.J.M.

    1991-01-01

    The subject of this thesis is the depletion of scarce resources. The main question to be answered is how to avoid future resource crises. After dealing with the complex relation between nature and economics, three important concepts in relation with resource depletion are discussed: steady state, ti

  7. Cord blood glutathione depletion in preterm infants: correlation with maternal cysteine depletion.

    Directory of Open Access Journals (Sweden)

    Alice Küster

    Full Text Available BACKGROUND: Depletion of blood glutathione (GSH, a key antioxidant, is known to occur in preterm infants. OBJECTIVE: Our aim was to determine: 1 whether GSH depletion is present at the time of birth; and 2 whether it is associated with insufficient availability of cysteine (cys, the limiting GSH precursor, or a decreased capacity to synthesize GSH. METHODOLOGY: Sixteen mothers delivering very low birth weight infants (VLBW, and 16 mothers delivering healthy, full term neonates were enrolled. Immediately after birth, erythrocytes from umbilical vein, umbilical artery, and maternal blood were obtained to assess GSH [GSH] and cysteine [cys] concentrations, and the GSH synthesis rate was determined from the incorporation of labeled cysteine into GSH in isolated erythrocytes ex vivo, measured using gas chromatography mass spectrometry. PRINCIPAL FINDINGS: Compared with mothers delivering at full term, mothers delivering prematurely had markedly lower erythrocyte [GSH] and [cys] and these were significantly depressed in VLBW infants, compared with term neonates. A strong correlation was found between maternal and fetal GSH and cysteine levels. The capacity to synthesize GSH was as high in VLBW as in term infants. CONCLUSION: The current data demonstrate that: 1 GSH depletion is present at the time of birth in VLBW infants; 2 As VLBW neonates possess a fully active capacity to synthesize glutathione, the depletion may arise from inadequate cysteine availability, potentially due to maternal depletion. Further studies would be needed to determine whether maternal-fetal cysteine transfer is decreased in preterm infants, and, if so, whether cysteine supplementation of mothers at risk of delivering prematurely would strengthen antioxidant defense in preterm neonates.

  8. Modeling charge collection efficiency degradation in partially depleted GaAs photodiodes using the 1- and 2-carrier Hecht equations

    Energy Technology Data Exchange (ETDEWEB)

    Auden, E.C., E-mail: eauden@sandia.gov; Vizkelethy, G.; Serkland, D.K.; Bossert, D.J.; Doyle, B.L.

    2017-05-15

    The Hecht equation can be used to model the nonlinear degradation of charge collection efficiency (CCE) in response to radiation-induced displacement damage in both fully and partially depleted GaAs photodiodes. CCE degradation is measured for laser-generated photocurrent as a function of fluence and bias in Al{sub 0.3}Ga{sub 0.7}As/GaAs/Al{sub 0.25}Ga{sub 0.75}As p-i-n photodiodes which have been irradiated with 12 MeV C and 7.5 MeV Si ions. CCE is observed to degrade more rapidly with fluence in partially depleted photodiodes than in fully depleted photodiodes. When the intrinsic GaAs layer is fully depleted, the 2-carrier Hecht equation describes CCE degradation as photogenerated electrons and holes recombine at defect sites created by radiation damage in the depletion region. If the GaAs layer is partially depleted, CCE degradation is more appropriately modeled as the sum of the 2-carrier Hecht equation applied to electrons and holes generated within the depletion region and the 1-carrier Hecht equation applied to minority carriers that diffuse from the field-free (non-depleted) region into the depletion region. Enhanced CCE degradation is attributed to holes that recombine within the field-free region of the partially depleted intrinsic GaAs layer before they can diffuse into the depletion region.

  9. "When the going gets tough, who keeps going?" Depletion sensitivity moderates the ego-depletion effect.

    Science.gov (United States)

    Salmon, Stefanie J; Adriaanse, Marieke A; De Vet, Emely; Fennis, Bob M; De Ridder, Denise T D

    2014-01-01

    Self-control relies on a limited resource that can get depleted, a phenomenon that has been labeled ego-depletion. We argue that individuals may differ in their sensitivity to depleting tasks, and that consequently some people deplete their self-control resource at a faster rate than others. In three studies, we assessed individual differences in depletion sensitivity, and demonstrate that depletion sensitivity moderates ego-depletion effects. The Depletion Sensitivity Scale (DSS) was employed to assess depletion sensitivity. Study 1 employs the DSS to demonstrate that individual differences in sensitivity to ego-depletion exist. Study 2 shows moderate correlations of depletion sensitivity with related self-control concepts, indicating that these scales measure conceptually distinct constructs. Study 3 demonstrates that depletion sensitivity moderates the ego-depletion effect. Specifically, participants who are sensitive to depletion performed worse on a second self-control task, indicating a stronger ego-depletion effect, compared to participants less sensitive to depletion.

  10. Anxiety, ego depletion, and sports performance.

    Science.gov (United States)

    Englert, Chris; Bertrams, Alex

    2012-10-01

    In the present article, we analyzed the role of self-control strength and state anxiety in sports performance. We tested the hypothesis that self-control strength and state anxiety interact in predicting sports performance on the basis of two studies, each using a different sports task (Study 1: performance in a basketball free throw task, N = 64; Study 2: performance in a dart task, N = 79). The patterns of results were as expected in both studies: Participants with depleted self-control strength performed worse in the specific tasks as their anxiety increased, whereas there was no significant relation for participants with fully available self-control strength. Furthermore, different degrees of available self-control strength did not predict performance in participants who were low in state anxiety, but did in participants who were high in state anxiety. Thus increasing self-control strength could reduce the negative anxiety effects in sports and improve athletes' performance under pressure.

  11. A modern depleted uranium manufacturing facility

    Energy Technology Data Exchange (ETDEWEB)

    Zagula, T.A.

    1995-07-01

    The Specific Manufacturing Capabilities (SMC) Project located at the Idaho National Engineering Laboratory (INEL) and operated by Lockheed Martin Idaho Technologies Co. (LMIT) for the Department of Energy (DOE) manufactures depleted uranium for use in the U.S. Army MIA2 Abrams Heavy Tank Armor Program. Since 1986, SMC has fabricated more than 12 million pounds of depleted uranium (DU) products in a multitude of shapes and sizes with varying metallurgical properties while maintaining security, environmental, health and safety requirements. During initial facility design in the early 1980`s, emphasis on employee safety, radiation control and environmental consciousness was gaining momentum throughout the DOE complex. This fact coupled with security and production requirements forced design efforts to focus on incorporating automation, local containment and computerized material accountability at all work stations. The result was a fully automated production facility engineered to manufacture DU armor packages with virtually no human contact while maintaining security, traceability and quality requirements. This hands off approach to handling depleted uranium resulted in minimal radiation exposures and employee injuries. Construction of the manufacturing facility was complete in early 1986 with the first armor package certified in October 1986. Rolling facility construction was completed in 1987 with the first certified plate produced in the fall of 1988. Since 1988 the rolling and manufacturing facilities have delivered more than 2600 armor packages on schedule with 100% final product quality acceptance. During this period there was an annual average of only 2.2 lost time incidents and a single individual maximum radiation exposure of 150 mrem. SMC is an example of designing and operating a facility that meets regulatory requirements with respect to national security, radiation control and personnel safety while achieving production schedules and product quality.

  12. Halocarbon ozone depletion and global warming potentials

    Science.gov (United States)

    Cox, Richard A.; Wuebbles, D.; Atkinson, R.; Connell, Peter S.; Dorn, H. P.; Derudder, A.; Derwent, Richard G.; Fehsenfeld, F. C.; Fisher, D.; Isaksen, Ivar S. A.

    1990-01-01

    Concern over the global environmental consequences of fully halogenated chlorofluorocarbons (CFCs) has created a need to determine the potential impacts of other halogenated organic compounds on stratospheric ozone and climate. The CFCs, which do not contain an H atom, are not oxidized or photolyzed in the troposphere. These compounds are transported into the stratosphere where they decompose and can lead to chlorine catalyzed ozone depletion. The hydrochlorofluorocarbons (HCFCs or HFCs), in particular those proposed as substitutes for CFCs, contain at least one hydrogen atom in the molecule, which confers on these compounds a much greater sensitivity toward oxidation by hydroxyl radicals in the troposphere, resulting in much shorter atmospheric lifetimes than CFCs, and consequently lower potential for depleting ozone. The available information is reviewed which relates to the lifetime of these compounds (HCFCs and HFCs) in the troposphere, and up-to-date assessments are reported of the potential relative effects of CFCs, HCFCs, HFCs, and halons on stratospheric ozone and global climate (through 'greenhouse' global warming).

  13. Depleting depletion: Polymer swelling in poor solvent mixtures

    Science.gov (United States)

    Mukherji, Debashish; Marques, Carlos; Stuehn, Torsten; Kremer, Kurt

    A polymer collapses in a solvent when the solvent particles dislike monomers more than the repulsion between monomers. This leads to an effective attraction between monomers, also referred to as depletion induced attraction. This attraction is the key factor behind standard polymer collapse in poor solvents. Strikingly, even if a polymer exhibits poor solvent condition in two different solvents, it can also swell in mixtures of these two poor solvents. This collapse-swelling-collapse scenario is displayed by poly(methyl methacrylate) (PMMA) in aqueous alcohol. Using molecular dynamics simulations of a thermodynamically consistent generic model and theoretical arguments, we unveil the microscopic origin of this phenomenon. Our analysis suggests that a subtle interplay of the bulk solution properties and the local depletion forces reduces depletion effects, thus dictating polymer swelling in poor solvent mixtures.

  14. Rotational Mixing and Lithium Depletion

    CERN Document Server

    Pinsonneault, M H

    2010-01-01

    I review basic observational features in Population I stars which strongly implicate rotation as a mixing agent; these include dispersion at fixed temperature in coeval populations and main sequence lithium depletion for a range of masses at a rate which decays with time. New developments related to the possible suppression of mixing at late ages, close binary mergers and their lithium signature, and an alternate origin for dispersion in young cool stars tied to radius anomalies observed in active young stars are discussed. I highlight uncertainties in models of Population II lithium depletion and dispersion related to the treatment of angular momentum loss. Finally, the origins of rotation are tied to conditions in the pre-main sequence, and there is thus some evidence that enviroment and planet formation could impact stellar rotational properties. This may be related to recent observational evidence for cluster to cluster variations in lithium depletion and a connection between the presence of planets and s...

  15. Charge depletion in organic heterojunction

    Science.gov (United States)

    Ng, T. W.; Lo, M. F.; Lee, S. T.; Lee, C. S.

    2012-03-01

    Until now two types of organic-organic heterojunction (OHJ) have been observed in P-N junctions formed between undoped-organic semiconductors. Charge-transfers across OHJs are either negligible or showing electron transfer from P-type to N-type materials, leading to charges accumulation near the interface. Here, we observed that junction of 4,4',4''-tris(2-methylphenyl-phenylamino)triphenylamine (m-MTDATA)/bathocuproine (BCP) show the third-behavior. Electrons in BCP (N-type) transfer to m-MTDATA (P-type), leading to depletion of mobile majority carriers near the junction. While "depletion junctions" are typical in inorganic semiconductors, there are no reports in undoped-OHJ. Formation mechanism of depletion OHJs and fundamental differences between inorganic and organic HJs are discussed.

  16. Mach-Zehnder Interferometer Biochemical Sensor Based on Silicon-on-Insulator Rib Waveguide with Large Cross Section.

    Science.gov (United States)

    Yuan, Dengpeng; Dong, Ying; Liu, Yujin; Li, Tianjian

    2015-08-28

    A high-sensitivity Mach-Zehnder interferometer (MZI) biochemical sensing platform based on Silicon-in-insulator (SOI) rib waveguide with large cross section is proposed in this paper. Based on the analyses of the evanescent field intensity, the mode polarization and cross section dimensions of the SOI rib waveguide are optimized through finite difference method (FDM) simulation. To realize high-resolution MZI read-out configuration based on the SOI rib waveguide, medium-filled trenches are employed and their performances are simulated through two-dimensional finite-difference-time domain (2D-FDTD) method. With the fundamental EH-polarized mode of the SOI rib waveguide with a total rib height of 10 μm, an outside rib height of 5 μm and a rib width of 2.5 μm at the operating wavelength of 1550 nm, when the length of the sensitive window in the MZI configuration is 10 mm, a homogeneous sensitivity of 7296.6%/refractive index unit (RIU) is obtained. Supposing the resolutions of the photoelectric detectors connected to the output ports are 0.2%, the MZI sensor can achieve a detection limit of 2.74 × 10(-6) RIU. Due to high coupling efficiency of SOI rib waveguide with large cross section with standard single-mode glass optical fiber, the proposed MZI sensing platform can be conveniently integrated with optical fiber communication systems and (opto-) electronic systems, and therefore has the potential to realize remote sensing, in situ real-time detecting, and possible applications in the internet of things.

  17. Electron–phonon heat transport and electronic thermal conductivity in heavily doped silicon-on-insulator film

    OpenAIRE

    Kivinen, P; Savin, A.; Zgirski, M.; Törmä, P.; Pekola, Jukka P; Prunnila, M.; Ahopelto, J.

    2003-01-01

    Electron–phonon interaction and electronic thermal conductivity have been investigated in heavily doped silicon at subKelvin temperatures. The heat flow between electron and phonon systems is found to be proportional to T6. Utilization of a superconductor–semiconductor–superconductor thermometer enables a precise measurement of electron and substrate temperatures. The electronic thermal conductivity is consistent with the Wiedemann–Franz law. Peer reviewed

  18. Effect of Doping Position on the Active Silicon-on-Insulator Micro-Ring Resonator Based on Free Carrier Injection

    Directory of Open Access Journals (Sweden)

    B. Mardiana

    2012-01-01

    Full Text Available Problem statement: Metal interconnects have become significant limitation on the scaling of CMOS technologies in electronics integrated circuit. Silicon photonics has offers great potential to overcome this critical bottleneck due to the advantages of optical interconnects. Silicon-based optical micro-ring resonator is promising basic element of future electronic-photonic integrated circuits because of its wide applications on photonic devices such as modulator, switch and sensor. Approach: This study highlights the study of the free carrier injection effect on the active SOI micro-ring resonator. The effect of the free carrier injection on micro-ring resonator is evaluated by varying the p+ and n+ doping position. Device performances are predicted using numerical modeling software 2D SILVACO as well as Finite Difference Time Domain (FDTD simulation software, RSOFT. Results: The results show that the refractive index change increases as the p+ and n+ doping position become closer to the rib waveguide. A shift in resonant wavelength of around 2 and 3 nm was is predicted at 0.9V drive forward voltage for 0.5 and 1.0 μm gap distance between p+ and n+ doping regions and the sidewall of the rib waveguide. It is also shown that 10 and 9.2 dB maximum change of the output response obtained through the output of the transmission spectrum of the device with gap 0.5 and 1.0 μm. Conclusion: The closer distance between p+ and n+ doping regions and the rib waveguide has optimal shift of resonance wavelength and better extinction ratio of transmission spectrum.

  19. Design of photonic phased array switches using nano electromechanical systems on silicon-on-insulator integration platform

    Science.gov (United States)

    Hussein, Ali Abdulsattar

    This thesis presents an introduction to the design and simulation of a novel class of integrated photonic phased array switch elements. The main objective is to use nano-electromechanical (NEMS) based phase shifters of cascaded under-etched slot nanowires that are compact in size and require a small amount of power to operate them. The structure of the switch elements is organized such that it brings the phase shifting elements to the exterior sides of the photonic circuits. The transition slot couplers, used to interconnect the phase shifters, are designed to enable biasing one of the silicon beams of each phase shifter from an electrode located at the side of the phase shifter. The other silicon beam of each phase shifter is biased through the rest of the silicon structure of the switch element, which is taken as a ground. Phased array switch elements ranging from 2x2 up to 8x8 multiple-inputs/multiple-outputs (MIMO) are conveniently designed within reasonable footprints native to the current fabrication technologies. Chapter one presents the general layout of the various designs of the switch elements and demonstrates their novel features. This demonstration will show how waveguide disturbances in the interconnecting network from conventional switch elements can be avoided by adopting an innovative design. Some possible applications for the designed switch elements of different sizes and topologies are indicated throughout the chapter. Chapter two presents the design of the multimode interference (MMI) couplers used in the switch elements as splitters, combiners and waveguide crossovers. Simulation data and design methodologies for the multimode couplers of interest are detailed in this chapter. Chapter three presents the design and analysis of the NEMS-operated phase shifters. Both simulations and numerical analysis are utilized in the design of a 0°-180° capable NEMS-operated phase shifter. Additionally, the response of some of the designed photonic phased array switch elements is demonstrated in this chapter. An executive summary and conclusions sections are also included in the thesis.

  20. High-performance and power-efficient 2${\\times}$2 optical switch on Silicon-on-Insulator

    CERN Document Server

    Han, Zheng; Checoury, Xavier; Bourderionnet, Jérôme; Boucaud, Philippe; De Rossi, Alfredo; Combrié, Sylvain

    2015-01-01

    A compact (15{\\mu}m${\\times}${\\mu}m) and highly-optimized 2${\\times}$2 optical switch is demonstrated on a CMOS-compatible photonic crystal technology. On-chip insertion loss are below 1dB, static and dynamic contrast are 40dB and >20dB respectively. Owing to efficient thermo-optic design, the power consumption is below 3 mW while the switching time is 1 {\\mu}s.

  1. Note: A silicon-on-insulator microelectromechanical systems probe scanner for on-chip atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Fowler, Anthony G.; Maroufi, Mohammad; Moheimani, S. O. Reza, E-mail: Reza.Moheimani@newcastle.edu.au [School of Electrical Engineering and Computer Science, University of Newcastle, Callaghan, NSW 2308 (Australia)

    2015-04-15

    A new microelectromechanical systems-based 2-degree-of-freedom (DoF) scanner with an integrated cantilever for on-chip atomic force microscopy (AFM) is presented. The silicon cantilever features a layer of piezoelectric material to facilitate its use for tapping mode AFM and enable simultaneous deflection sensing. Electrostatic actuators and electrothermal sensors are used to accurately position the cantilever within the x-y plane. Experimental testing shows that the cantilever is able to be scanned over a 10 μm × 10 μm window and that the cantilever achieves a peak-to-peak deflection greater than 400 nm when excited at its resonance frequency of approximately 62 kHz.

  2. Compact silicon-on-insulator-based 2 × 2 Mach-Zehnder interferometer electro-optic switch with low crosstalk

    Institute of Scientific and Technical Information of China (English)

    Jiejiang Xing; Zhiyong Li; Peiji Zhou; Yuanhao Gong; Yude Yu; Manqing Tan; Jinzhong Yu

    2015-01-01

    We report a compact 2 × 2 Mach-Zehnder interferometer (MZI) electro-optic switch fabricated on a siliconon-insulator using standard complementary metal-oxide semiconductor (CMOS) processes.With a short modulation arm length of 200 μm,the crosstalk is reduced to-22 dB by the new modulation scheme of push-pull modulation with a pre-biased π/2 phase shift.The new modulation scheme can also work with a fast switching time of about 5.4 ns.

  3. Silicon-on-Insulator-Based Broadband 1×3 Adiabatic Splitter with Simultaneous Tapering of Velocity and Coupling

    Science.gov (United States)

    Gong, Yuan-Hao; Li, Zhi-Yong; Yu, Jin-Zhong; Yu, Yu-De

    2016-09-01

    Not Available Supported by the National High-Technology Research and Development Program of China under Grant Nos 2015AA016904 and 2013AA014402, the National Basic Research Program of China under Grant No 2011CB301701, and the National Natural Science Foundation of China under Grant No 61275065.

  4. Note: A silicon-on-insulator microelectromechanical systems probe scanner for on-chip atomic force microscopy.

    Science.gov (United States)

    Fowler, Anthony G; Maroufi, Mohammad; Moheimani, S O Reza

    2015-04-01

    A new microelectromechanical systems-based 2-degree-of-freedom (DoF) scanner with an integrated cantilever for on-chip atomic force microscopy (AFM) is presented. The silicon cantilever features a layer of piezoelectric material to facilitate its use for tapping mode AFM and enable simultaneous deflection sensing. Electrostatic actuators and electrothermal sensors are used to accurately position the cantilever within the x-y plane. Experimental testing shows that the cantilever is able to be scanned over a 10 μm × 10 μm window and that the cantilever achieves a peak-to-peak deflection greater than 400 nm when excited at its resonance frequency of approximately 62 kHz.

  5. Integration of CMOS-electronics and particle detector diodes in high-resistivity silicon-on-insulator wafers

    Energy Technology Data Exchange (ETDEWEB)

    Dierickx, B.; Wouters, D.; Willems, G.; Alaerts, A.; Debusschere, I.; Simoen, E.; Vlummens, J.; Akimoto, H.; Claeys, C.; Maes, H.; Hermans, L. (IMEC, Leuven (Belgium)); Heijne, E.H.M.; Jarron, P.; Anghinolfi, F.; Campbell, M.; Pengg, F.X.; Aspell, P. (CERM, Geneve (Switzerland)); Bosisio, L.; Focardi, E.; Forti, F.; Kashigin, S. (INFN sezione di Pisa, Pisa (Italy)); Mekkaoui, A.; Habrard, M.C.; Sauvage, D. (CPPM, Marseille (France)); Delpierre, P. (Coll. de France/IN2P3-CNRS, Paris (France)); Detector R and D Collaboration

    1993-08-01

    A new approach to monolithic pixel detectors, based on SOI wafers with high resistivity substrate, is being pursued by the CERN RD19 collaboration. This paper reports on the used fabrication methods, and on the results of the electrical evaluation of the SOI - MOSFET devices and of the detector structures fabricated in the bulk. The leakage current of the high-resistivity PIN-diodes was kept in the order of 5 to 10 aA/cm[sup 2]. The SOI preparation processes considered (SIMOX and ZMR) produced working electronic circuits and appear to be compatible with the fabrication of detectors to suitable quality.

  6. Theoretical sensitivity analysis of quadruple Vernier racetrack resonators designed for fabrication on the silicon-on-insulator platform

    Science.gov (United States)

    Boeck, Robert; Chrostowski, Lukas; Jaeger, Nicolas A. F.

    2014-09-01

    Vernier racetrack resonators offer advantages over single racetrack resonators such as extending the free spectral range (FSR).1-3 Here, we have presented a theoretical sensitivity analysis on quadruple Vernier racetrack resonators based on varying, one at a time, various fabrication dependent parameters. These parameters include the waveguide widths, heights, and propagation losses. We have shown that it should be possible to design a device that meets typical commercial specifications while being tolerant to changes in these parameters.

  7. Magnetic sensor with silicon on insulator structure for high temperature applications; SOI kozo wo mochiita koon`yo jiki sensor

    Energy Technology Data Exchange (ETDEWEB)

    Matsumoto, Y.; Kawai, H.; Terada, T.; Kawahito, S.; Ishida, M.; Nakamura, T. [Toyohashi University of Technology, Aichi (Japan)

    1996-09-20

    To enable stable magnetic measurement in high temperature surroundings, a Hall cell of the SOI structure (with a single-crystal Si layer formed on an insulating film) was experimentally fabricated, and its characteristics as a magnetic sensor were examined. This element can be mass-produced by use of the current semiconductor manufacturing technology. In the conventional method of element isolation using the pn-junction, backward leak currents across the pn-junction grow large at high temperatures, reducing sensitivity and increasing offset voltage (the Hall voltage at zero magnetic field) to disable the elements. Under the circumstances, an SOI structure in which elements are isolated by an SiO2 film were studied. Sensitivity and temperature characteristics are dependent on donor concentration. But there is a relationship of trade-off between sensitivity and the usable temperature range, and this means that a donor concentration fit for the given purpose needs be chosen. To inhibit the generation of the offset voltage, Hall element shapes and chip bonding methods were studied, and a magnetic sensor with an offset variation not more than {plus_minus}3mV was obtained. In an SOI magnetic sensor, the temperature range in which sensitivity remains constant expands as donor concentration is enhanced, and this permits the use of the SOI magnetic sensor in higher-temperature operations. 6 refs., 13 figs., 1 tab.

  8. Impact of mineral resource depletion

    CSIR Research Space (South Africa)

    Brent, AC

    2006-09-01

    Full Text Available In a letter to the editor, the authors comment on BA Steen's article on "Abiotic Resource Depletion: different perceptions of the problem with mineral deposits" published in the special issue of the International Journal of Life Cycle Assessment...

  9. Global depletion of groundwater resources

    NARCIS (Netherlands)

    Wada, Y.; Beek, L.P.H. van; van Kempen, C.M.; Reckman, J.W.T.M.; Vasak, S.; Bierkens, M.F.P.

    2010-01-01

    In regions with frequent water stress and large aquifer systems groundwater is often used as an additional water source. If groundwater abstraction exceeds the natural groundwater recharge for extensive areas and long times, overexploitation or persistent groundwater depletion occurs. Here we provid

  10. Chordal Graphs are Fully Orientable

    CERN Document Server

    Lai, Hsin-Hao

    2012-01-01

    Suppose that D is an acyclic orientation of a graph G. An arc of D is called dependent if its reversal creates a directed cycle. Let m and M denote the minimum and the maximum of the number of dependent arcs over all acyclic orientations of G. We call G fully orientable if G has an acyclic orientation with exactly d dependent arcs for every d satisfying m <= d <= M. A graph G is called chordal if every cycle in G of length at least four has a chord. We show that all chordal graphs are fully orientable.

  11. Ozone Depletion from Nearby Supernovae

    CERN Document Server

    Gehrels, N; Jackman, C H; Cannizzo, J K; Mattson, B J; Chen, W; Gehrels, Neil; Laird, Claude M.; Jackman, Charles H.; Cannizzo, John K.; Mattson, Barbara J.; Chen, Wan

    2003-01-01

    Estimates made in the 1970's indicated that a supernova occurring within tens of parsecs of Earth could have significant effects on the ozone layer. Since that time, improved tools for detailed modeling of atmospheric chemistry have been developed to calculate ozone depletion, and advances have been made in theoretical modeling of supernovae and of the resultant gamma-ray spectra. In addition, one now has better knowledge of the occurrence rate of supernovae in the galaxy, and of the spatial distribution of progenitors to core-collapse supernovae. We report here the results of two-dimensional atmospheric model calculations that take as input the spectral energy distribution of a supernova, adopting various distances from Earth and various latitude impact angles. In separate simulations we calculate the ozone depletion due to both gamma-rays and cosmic rays. We find that for the combined ozone depletion roughly to double the ``biologically active'' UV flux received at the surface of the Earth, the supernova mu...

  12. Ozone Depletion from Nearby Supernovae

    Science.gov (United States)

    Gehrels, Neil; Laird, Claude M.; Jackman, Charles H.; Cannizzo, John K.; Mattson, Barbara J.; Chen, Wan; Bhartia, P. K. (Technical Monitor)

    2002-01-01

    Estimates made in the 1970's indicated that a supernova occurring within tens of parsecs of Earth could have significant effects on the ozone layer. Since that time improved tools for detailed modeling of atmospheric chemistry have been developed to calculate ozone depletion, and advances have been made also in theoretical modeling of supernovae and of the resultant gamma ray spectra. In addition, one now has better knowledge of the occurrence rate of supernovae in the galaxy, and of the spatial distribution of progenitors to core-collapse supernovae. We report here the results of two-dimensional atmospheric model calculations that take as input the spectral energy distribution of a supernova, adopting various distances from Earth and various latitude impact angles. In separate simulations we calculate the ozone depletion due to both gamma rays and cosmic rays. We find that for the combined ozone depletion from these effects roughly to double the 'biologically active' UV flux received at the surface of the Earth, the supernova must occur at approximately or less than 8 parsecs.

  13. Ozone depletion, paradigms, and politics

    Energy Technology Data Exchange (ETDEWEB)

    Iman, R.L.

    1993-10-01

    The destruction of the Earth`s protective ozone layer is a prime environmental concern. Industry has responded to this environmental problem by: implementing conservation techniques to reduce the emission of ozone-depleting chemicals (ODCs); using alternative cleaning solvents that have lower ozone depletion potentials (ODPs); developing new, non-ozone-depleting solvents, such as terpenes; and developing low-residue soldering processes. This paper presents an overview of a joint testing program at Sandia and Motorola to evaluate a low-residue (no-clean) soldering process for printed wiring boards (PWBs). Such processes are in widespread use in commercial applications because they eliminate the cleaning operation. The goal of this testing program was to develop a data base that could be used to support changes in the mil-specs. In addition, a joint task force involving industry and the military has been formed to conduct a follow-up evaluation of low-residue processes that encompass the concerns of the tri-services. The goal of the task force is to gain final approval of the low-residue technology for use in military applications.

  14. Spearfishing to depletion: evidence from temperate reef fishes in Chile.

    Science.gov (United States)

    Godoy, Natalio; Gelcich, L Stefan; Vásquez, Julio A; Castilla, Juan Carlos

    2010-09-01

    Unreliable and data-poor marine fishery landings can lead to a lack of regulatory action in fisheries management. Here we use official Chilean landing reports and non-conventional indicators, such as fishers' perceptions and spearfishing competition results, to provide evidence of reef fishes depletions caused by unregulated spearfishing. Results show that the three largest and most emblematic reef fishes targeted mainly by spearfishers (> 98% of landings) [Graus nigra (vieja negra), Semicossyphus darwini (sheephead or pejeperro), and Medialuna ancietae (acha)] show signs of depletion in terms of abundance and size and that overall the catches of reef fishes have shifted from large carnivore species toward smaller-sized omnivore and herbivore species. Information from two snorkeling speargun world championships (1971 and 2004, Iquique, Chile) and from fishers' perceptions shows the mean size of reef fish to be declining. Although the ecological consequences of reef fish depletion are not fully understood in Chile, evidence of spearfishing depleting temperate reef fishes must be explicitly included in policy debates. This would involve bans or strong restrictions on the use of SCUBA and hookah diving gear for spearfishing, and minimum size limits. It may also involve academic and policy discussions regarding conservation and fisheries management synergies within networks of no-take and territorial user-rights fisheries areas, as a strategy for the sustainable management of temperate and tropical reef fisheries.

  15. A fully differential OTA with dynamic offset cancellation in 28nm FD-SOI process

    Science.gov (United States)

    Jaworski, Zbigniew

    2016-12-01

    This papers presents a classic fully differential operational transconductance amplifier (FDOTA) implemented in industrial 28 nm FD-SOI (Fully-Depleted SOI) technology. A novel approach to minimized the FDOTA offset voltage is proposed. The solution employs the unique feature of FD-SOI technology - back-gate biasing - combined with modern compensation methodology. The proposed method results in considerable design overhead. However, this offset cancellation approach is very effective and allows to improve FDOTA performance when classic techniques reach their limits.

  16. The Case of Ozone Depletion

    Science.gov (United States)

    Lambright, W. Henry

    2005-01-01

    While the National Aeronautics and Space Administration (NASA) is widely perceived as a space agency, since its inception NASA has had a mission dedicated to the home planet. Initially, this mission involved using space to better observe and predict weather and to enable worldwide communication. Meteorological and communication satellites showed the value of space for earthly endeavors in the 1960s. In 1972, NASA launched Landsat, and the era of earth-resource monitoring began. At the same time, in the late 1960s and early 1970s, the environmental movement swept throughout the United States and most industrialized countries. The first Earth Day event took place in 1970, and the government generally began to pay much more attention to issues of environmental quality. Mitigating pollution became an overriding objective for many agencies. NASA's existing mission to observe planet Earth was augmented in these years and directed more toward environmental quality. In the 1980s, NASA sought to plan and establish a new environmental effort that eventuated in the 1990s with the Earth Observing System (EOS). The Agency was able to make its initial mark via atmospheric monitoring, specifically ozone depletion. An important policy stimulus in many respects, ozone depletion spawned the Montreal Protocol of 1987 (the most significant international environmental treaty then in existence). It also was an issue critical to NASA's history that served as a bridge linking NASA's weather and land-resource satellites to NASA s concern for the global changes affecting the home planet. Significantly, as a global environmental problem, ozone depletion underscored the importance of NASA's ability to observe Earth from space. Moreover, the NASA management team's ability to apply large-scale research efforts and mobilize the talents of other agencies and the private sector illuminated its role as a lead agency capable of crossing organizational boundaries as well as the science-policy divide.

  17. Action orientation overcomes the ego depletion effect.

    Science.gov (United States)

    Dang, Junhua; Xiao, Shanshan; Shi, Yucai; Mao, Lihua

    2015-04-01

    It has been consistently demonstrated that initial exertion of self-control had negative influence on people's performance on subsequent self-control tasks. This phenomenon is referred to as the ego depletion effect. Based on action control theory, the current research investigated whether the ego depletion effect could be moderated by individuals' action versus state orientation. Our results showed that only state-oriented individuals exhibited ego depletion. For individuals with action orientation, however, their performance was not influenced by initial exertion of self-control. The beneficial effect of action orientation against ego depletion in our experiment results from its facilitation for adapting to the depleting task.

  18. "When the going gets tough, who keeps going?" Depletion sensitivity moderates the ego-depletion effect

    NARCIS (Netherlands)

    Salmon, Stefanie J.; Adriaanse, Marieke A.; De Vet, Emely; Fennis, Bob M.; De Ridder, Denise T D

    2014-01-01

    Self-control relies on a limited resource that can get depleted, a phenomenon that has been labeled ego-depletion. We argue that individuals may differ in their sensitivity to depleting tasks, and that consequently some people deplete their self-control resource at a faster rate than others. In thre

  19. "When the going gets tough, who keeps going?" : Depletion sensitivity moderates the ego-depletion effect

    NARCIS (Netherlands)

    Salmon, Stefanie J.; Adriaanse, Marieke A.; De Vet, Emely; Fennis, Bob M.; De Ridder, Denise T. D.

    2014-01-01

    Self-control relies on a limited resource that can get depleted, a phenomenon that has been labeled ego-depletion. We argue that individuals may differ in their sensitivity to depleting tasks, and that consequently some people deplete their self-control resource at a faster rate than others. In thre

  20. "When the going gets tough, who keeps going?" : Depletion sensitivity moderates the ego-depletion effect

    NARCIS (Netherlands)

    Salmon, Stefanie J.; Adriaanse, Marieke A.; De Vet, Emely; Fennis, Bob M.; De Ridder, Denise T. D.

    2014-01-01

    Self-control relies on a limited resource that can get depleted, a phenomenon that has been labeled ego-depletion. We argue that individuals may differ in their sensitivity to depleting tasks, and that consequently some people deplete their self-control resource at a faster rate than others. In thre

  1. The 1988 Antarctic ozone depletion - Comparison with previous year depletions

    Science.gov (United States)

    Schoeberl, Mark R.; Stolarski, Richard S.; Krueger, Arlin J.

    1989-01-01

    The 1988 spring Antarctic ozone depletion was observed by TOMS to be substantially smaller than in recent years. The minimum polar total ozone values declined only 15 percent during September 1988, compared to nearly 50 percent during September 1987. At southern midlatitudes, exceptionally high total ozone values were recorded beginning in July 1988. The total integrated southern hemispheric ozone increased rapidly during the Austral spring, approaching 1980 levels during October. The high midlatitude total ozone values were associated with a substantial increase in eddy activity as indicated by the standard deviation in total ozone in the zonal band 30-60 deg S. Mechanisms through which the increased midlatitude eddy activity could disrupt the formation of the Antarctic ozone hole are briefly discussed.

  2. Fully integrated, fully automated generation of short tandem repeat profiles

    Science.gov (United States)

    2013-01-01

    Background The generation of short tandem repeat profiles, also referred to as ‘DNA typing,’ is not currently performed outside the laboratory because the process requires highly skilled technical operators and a controlled laboratory environment and infrastructure with several specialized instruments. The goal of this work was to develop a fully integrated system for the automated generation of short tandem repeat profiles from buccal swab samples, to improve forensic laboratory process flow as well as to enable short tandem repeat profile generation to be performed in police stations and in field-forward military, intelligence, and homeland security settings. Results An integrated system was developed consisting of an injection-molded microfluidic BioChipSet cassette, a ruggedized instrument, and expert system software. For each of five buccal swabs, the system purifies DNA using guanidinium-based lysis and silica binding, amplifies 15 short tandem repeat loci and the amelogenin locus, electrophoretically separates the resulting amplicons, and generates a profile. No operator processing of the samples is required, and the time from swab insertion to profile generation is 84 minutes. All required reagents are contained within the BioChipSet cassette; these consist of a lyophilized polymerase chain reaction mix and liquids for purification and electrophoretic separation. Profiles obtained from fully automated runs demonstrate that the integrated system generates concordant short tandem repeat profiles. The system exhibits single-base resolution from 100 to greater than 500 bases, with inter-run precision with a standard deviation of ±0.05 - 0.10 bases for most alleles. The reagents are stable for at least 6 months at 22°C, and the instrument has been designed and tested to Military Standard 810F for shock and vibration ruggedization. A nontechnical user can operate the system within or outside the laboratory. Conclusions The integrated system represents the

  3. Fully automated (operational) modal analysis

    Science.gov (United States)

    Reynders, Edwin; Houbrechts, Jeroen; De Roeck, Guido

    2012-05-01

    Modal parameter estimation requires a lot of user interaction, especially when parametric system identification methods are used and the modes are selected in a stabilization diagram. In this paper, a fully automated, generally applicable three-stage clustering approach is developed for interpreting such a diagram. It does not require any user-specified parameter or threshold value, and it can be used in an experimental, operational, and combined vibration testing context and with any parametric system identification algorithm. The three stages of the algorithm correspond to the three stages in a manual analysis: setting stabilization thresholds for clearing out the diagram, detecting columns of stable modes, and selecting a representative mode from each column. An extensive validation study illustrates the accuracy and robustness of this automation strategy.

  4. Singularities in fully developed turbulence

    Energy Technology Data Exchange (ETDEWEB)

    Shivamoggi, Bhimsen K., E-mail: bhimsen.shivamoggi@ucf.edu

    2015-09-18

    Phenomenological arguments are used to explore finite-time singularity (FTS) development in different physical fully-developed turbulence (FDT) situations. Effects of spatial intermittency and fluid compressibility in three-dimensional (3D) FDT and the role of the divorticity amplification mechanism in two-dimensional (2D) FDT and quasi-geostrophic FDT and the advection–diffusion mechanism in magnetohydrodynamic turbulence are considered to provide physical insights into the FTS development in variant cascade physics situations. The quasi-geostrophic FDT results connect with the 2D FDT results in the barotropic limit while they connect with 3D FDT results in the baroclinic limit and hence apparently provide a bridge between 2D and 3D. - Highlights: • Finite-time singularity development in turbulence situations is phenomenologically explored. • Spatial intermittency and compressibility effects are investigated. • Quasi-geostrophic turbulence is shown to provide a bridge between two-dimensional and three-dimensional cases.

  5. Depleted uranium disposal options evaluation

    Energy Technology Data Exchange (ETDEWEB)

    Hertzler, T.J.; Nishimoto, D.D.; Otis, M.D. [Science Applications International Corp., Idaho Falls, ID (United States). Waste Management Technology Div.

    1994-05-01

    The Department of Energy (DOE), Office of Environmental Restoration and Waste Management, has chartered a study to evaluate alternative management strategies for depleted uranium (DU) currently stored throughout the DOE complex. Historically, DU has been maintained as a strategic resource because of uses for DU metal and potential uses for further enrichment or for uranium oxide as breeder reactor blanket fuel. This study has focused on evaluating the disposal options for DU if it were considered a waste. This report is in no way declaring these DU reserves a ``waste,`` but is intended to provide baseline data for comparison with other management options for use of DU. To PICS considered in this report include: Retrievable disposal; permanent disposal; health hazards; radiation toxicity and chemical toxicity.

  6. In situ depletion of CD4(+) T cells in human skin by Zanolimumab

    DEFF Research Database (Denmark)

    Villadsen, L.S.; Skov, L.; Dam, T.N.

    2007-01-01

    -driving T cells in situ may therefore be a useful approach in the treatment of inflammatory and malignant skin diseases. Depletion of CD4(+) T cells in intact inflamed human skin tissue by Zanolimumab, a fully human therapeutic monoclonal antibody (IgG1, kappa) against CD4, was studied in a human psoriasis...

  7. Restaurant No. 1 fully renovated

    CERN Multimedia

    2007-01-01

    The Restaurant No. 1 team. After several months of patience and goodwill on the part of our clients, we are delighted to announce that the major renovation work which began in September 2006 has now been completed. From 21 May 2007 we look forward to welcoming you to a completely renovated restaurant area designed with you in mind. The restaurant team wishes to thank all its clients for their patience and loyalty. Particular attention has been paid in the new design to creating a spacious serving area and providing a wider choice of dishes. The new restaurant area has been designed as an open-plan space to enable you to view all the dishes before making your selection and to move around freely from one food access point to another. It comprises user-friendly areas that fully comply with hygiene standards. From now on you will be able to pick and choose to your heart's content. We invite you to try out wok cooking or some other speciality. Or select a pizza or a plate of pasta with a choice of two sauces fr...

  8. A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel

    Institute of Scientific and Technical Information of China (English)

    Zhang Jian; Han Yu; Chan Mansun; He Jin; Zhou Xing-Ye; Zhang Li-Ning; Ma Yu-Tao; Chen Qin; Zhang Xu-Kai; Yang Zhang; Wang Rui-Fei

    2012-01-01

    A unified charge-based model for fully depleted silicon-on-insulator (SOI) metal-oxide semiconductor field-effect transistors (MOSFETs) is presented.The proposed model is accurate and applicable from intrinsic to heavily doped channels with various structure parameters.The framework starts from the one-dimensional Poisson-Boltzmann equation,and based on the full depletion approximation,an accurate inversion charge density equation is obtained.With the inversion charge density solution,the unified drain current expression is derived,and a unified terminal charge and intrinsic capacitance model is also derived in the quasi-static case.The validity and accuracy of the presented analytic model is proved by numerical simulations.

  9. Ego depletion increases risk-taking.

    Science.gov (United States)

    Fischer, Peter; Kastenmüller, Andreas; Asal, Kathrin

    2012-01-01

    We investigated how the availability of self-control resources affects risk-taking inclinations and behaviors. We proposed that risk-taking often occurs from suboptimal decision processes and heuristic information processing (e.g., when a smoker suppresses or neglects information about the health risks of smoking). Research revealed that depleted self-regulation resources are associated with reduced intellectual performance and reduced abilities to regulate spontaneous and automatic responses (e.g., control aggressive responses in the face of frustration). The present studies transferred these ideas to the area of risk-taking. We propose that risk-taking is increased when individuals find themselves in a state of reduced cognitive self-control resources (ego-depletion). Four studies supported these ideas. In Study 1, ego-depleted participants reported higher levels of sensation seeking than non-depleted participants. In Study 2, ego-depleted participants showed higher levels of risk-tolerance in critical road traffic situations than non-depleted participants. In Study 3, we ruled out two alternative explanations for these results: neither cognitive load nor feelings of anger mediated the effect of ego-depletion on risk-taking. Finally, Study 4 clarified the underlying psychological process: ego-depleted participants feel more cognitively exhausted than non-depleted participants and thus are more willing to take risks. Discussion focuses on the theoretical and practical implications of these findings.

  10. Depletion of CpG Dinucleotides in Papillomaviruses and Polyomaviruses: A Role for Divergent Evolutionary Pressures.

    Directory of Open Access Journals (Sweden)

    Mohita Upadhyay

    Full Text Available Papillomaviruses and polyomaviruses are small ds-DNA viruses infecting a wide-range of vertebrate hosts. Evidence supporting co-evolution of the virus with the host does not fully explain the evolutionary path of papillomaviruses and polyomaviruses. Studies analyzing CpG dinucleotide frequencies in virus genomes have provided interesting insights on virus evolution. CpG dinucleotide depletion has not been extensively studied among papillomaviruses and polyomaviruses. We sought to analyze the relative abundance of dinucleotides and the relative roles of evolutionary pressures in papillomaviruses and polyomaviruses.We studied 127 full-length sequences from papillomaviruses and 56 full-length sequences from polyomaviruses. We analyzed the relative abundance of dinucleotides, effective codon number (ENC, differences in synonymous codon usage. We examined the association, if any, between the extent of CpG dinucleotide depletion and the evolutionary lineage of the infected host. We also investigated the contribution of mutational pressure and translational selection to the evolution of papillomaviruses and polyomaviruses.All papillomaviruses and polyomaviruses are CpG depleted. Interestingly, the evolutionary lineage of the infected host determines the extent of CpG depletion among papillomaviruses and polyomaviruses. CpG dinucleotide depletion was more pronounced among papillomaviruses and polyomaviruses infecting human and other mammals as compared to those infecting birds. Our findings demonstrate that CpG depletion among papillomaviruses is linked to mutational pressure; while CpG depletion among polyomaviruses is linked to translational selection. We also present evidence that suggests methylation of CpG dinucleotides may explain, at least in part, the depletion of CpG dinucleotides among papillomaviruses but not polyomaviruses.The extent of CpG depletion among papillomaviruses and polyomaviruses is linked to the evolutionary lineage of the

  11. The fully Mobile City Government Project (MCity)

    DEFF Research Database (Denmark)

    Scholl, Hans; Fidel, Raya; Mai, Jens Erik

    2006-01-01

    The Fully Mobile City Government Project, also known as MCity, is an interdisciplinary research project on the premises, requirements, and effects of fully mobile, wirelessly connected applications (FWMC). The project will develop an analytical framework for interpreting the interaction...

  12. Investigation of intranodal depletion effects

    Energy Technology Data Exchange (ETDEWEB)

    Forslund, P. E-mail: petri.forslund@se.abb.com; Mueller, E.; Lindahl, S

    2001-02-01

    The modeling of depletion induced intranodal effects on important neutron physical parameters in nodal diffusion theory is addressed. Consideration is given to two situations where these aspects are of particular interest, namely, in mixed oxide cores where strong interaction between uranium and plutonium mixed oxide assemblies occur, and in boiling water reactor cores where significant control rod history effects are encountered. A model based on a low order polynomial representation of intranodal cross-section spatial behaviour is considered. Two approaches for determining the constraints for the polynomial fitting procedure are applied. The first one is a conventional method employing intranodal exposure values, whereas the second model combines intranodal exposure and isotopic inventory information. Numerical studies are performed in order to evaluate the relative merits of the different models. It is demonstrated that pin power predictions are significantly influenced by intranodal effects. It is also found that the combined use of intranodal isotopic inventory and exposure distributions for estimating intranodal cross-section behaviour significantly improves the accuracy in pin powers over the more traditional approach of utilizing exposure distributions only.

  13. Depleted argon from underground sources

    Energy Technology Data Exchange (ETDEWEB)

    Back, H.O.; /Princeton U.; Alton, A.; /Augustana U. Coll.; Calaprice, F.; Galbiati, C.; Goretti, A.; /Princeton U.; Kendziora, C.; /Fermilab; Loer, B.; /Princeton U.; Montanari, D.; /Fermilab; Mosteiro, P.; /Princeton U.; Pordes, S.; /Fermilab

    2011-09-01

    Argon is a powerful scintillator and an excellent medium for detection of ionization. Its high discrimination power against minimum ionization tracks, in favor of selection of nuclear recoils, makes it an attractive medium for direct detection of WIMP dark matter. However, cosmogenic {sup 39}Ar contamination in atmospheric argon limits the size of liquid argon dark matter detectors due to pile-up. The cosmic ray shielding by the earth means that Argon from deep underground is depleted in {sup 39}Ar. In Cortez Colorado a CO{sub 2} well has been discovered to contain approximately 500ppm of argon as a contamination in the CO{sub 2}. In order to produce argon for dark matter detectors we first concentrate the argon locally to 3-5% in an Ar, N{sub 2}, and He mixture, from the CO{sub 2} through chromatographic gas separation. The N{sub 2} and He will be removed by continuous cryogenic distillation in the Cryogenic Distillation Column recently built at Fermilab. In this talk we will discuss the entire extraction and purification process; with emphasis on the recent commissioning and initial performance of the cryogenic distillation column purification.

  14. Depletion sensitivity predicts unhealthy snack purchases

    NARCIS (Netherlands)

    Salmon, Stefanie J.; Adriaanse, Marieke A.; Fennis, Bob M.; Vet, De Emely; Ridder, De Denise T.D.

    2016-01-01

    The aim of the present research is to examine the relation between depletion sensitivity - a novel construct referring to the speed or ease by which one's self-control resources are drained - and snack purchase behavior. In addition, interactions between depletion sensitivity and the goal to lose

  15. Depletion sensitivity predicts unhealthy snack purchases

    NARCIS (Netherlands)

    Salmon, Stefanie J.; Adriaanse, Marieke A.|info:eu-repo/dai/nl/304823023; Fennis, Bob M.; De Vet, Emely; De Ridder, Denise T D

    2016-01-01

    The aim of the present research is to examine the relation between depletion sensitivity - a novel construct referring to the speed or ease by which one's self-control resources are drained - and snack purchase behavior. In addition, interactions between depletion sensitivity and the goal to lose

  16. The Chemistry and Toxicology of Depleted Uranium

    Directory of Open Access Journals (Sweden)

    Sidney A. Katz

    2014-03-01

    Full Text Available Natural uranium is comprised of three radioactive isotopes: 238U, 235U, and 234U. Depleted uranium (DU is a byproduct of the processes for the enrichment of the naturally occurring 235U isotope. The world wide stock pile contains some 1½ million tons of depleted uranium. Some of it has been used to dilute weapons grade uranium (~90% 235U down to reactor grade uranium (~5% 235U, and some of it has been used for heavy tank armor and for the fabrication of armor-piercing bullets and missiles. Such weapons were used by the military in the Persian Gulf, the Balkans and elsewhere. The testing of depleted uranium weapons and their use in combat has resulted in environmental contamination and human exposure. Although the chemical and the toxicological behaviors of depleted uranium are essentially the same as those of natural uranium, the respective chemical forms and isotopic compositions in which they usually occur are different. The chemical and radiological toxicity of depleted uranium can injure biological systems. Normal functioning of the kidney, liver, lung, and heart can be adversely affected by depleted uranium intoxication. The focus of this review is on the chemical and toxicological properties of depleted and natural uranium and some of the possible consequences from long term, low dose exposure to depleted uranium in the environment.

  17. Ultra Low Energy FDSOI Asynchronous Reconfiguration Network for Adaptive Circuits

    Directory of Open Access Journals (Sweden)

    Soundous Chairat

    2017-05-01

    Full Text Available This paper introduces a plug-and-play on-chip asynchronous communication network aimed at the dynamic reconfiguration of a low-power adaptive circuit such as an internet of things (IoT system. By using a separate communication network, we can address both digital and analog blocks at a lower configuration cost, increasing the overall system power efficiency. As reconfiguration only occurs according to specific events and has to be automatically in stand-by most of the time, our design is fully asynchronous using handshake protocols. The paper presents the circuit’s architecture, performance results, and an example of the reconfiguration of frequency locked loops (FLL to validate our work. We obtain an overall energy per bit of 0.07 pJ/bit for one stage, in a 28 nm Fully Depleted Silicon On Insulator (FDSOI technology at 0.6 V and a 1.1 ns/bit latency per stage.

  18. High homocysteine induces betaine depletion.

    Science.gov (United States)

    Imbard, Apolline; Benoist, Jean-François; Esse, Ruben; Gupta, Sapna; Lebon, Sophie; de Vriese, An S; de Baulny, Helene Ogier; Kruger, Warren; Schiff, Manuel; Blom, Henk J

    2015-04-28

    Betaine is the substrate of the liver- and kidney-specific betaine-homocysteine (Hcy) methyltransferase (BHMT), an alternate pathway for Hcy remethylation. We hypothesized that BHMT is a major pathway for homocysteine removal in cases of hyperhomocysteinaemia (HHcy). Therefore, we measured betaine in plasma and tissues from patients and animal models of HHcy of genetic and acquired cause. Plasma was collected from patients presenting HHcy without any Hcy interfering treatment. Plasma and tissues were collected from rat models of HHcy induced by diet and from a mouse model of cystathionine β-synthase (CBS) deficiency. S-adenosyl-methionine (AdoMet), S-adenosyl-homocysteine (AdoHcy), methionine, betaine and dimethylglycine (DMG) were quantified by ESI-LC-MS/MS. mRNA expression was quantified using quantitative real-time (QRT)-PCR. For all patients with diverse causes of HHcy, plasma betaine concentrations were below the normal values of our laboratory. In the diet-induced HHcy rat model, betaine was decreased in all tissues analysed (liver, brain, heart). In the mouse CBS deficiency model, betaine was decreased in plasma, liver, heart and brain, but was conserved in kidney. Surprisingly, BHMT expression and activity was decreased in liver. However, in kidney, BHMT and SLC6A12 expression was increased in CBS-deficient mice. Chronic HHcy, irrespective of its cause, induces betaine depletion in plasma and tissues (liver, brain and heart), indicating a global decrease in the body betaine pool. In kidney, betaine concentrations were not affected, possibly due to overexpression of the betaine transporter SLC6A12 where betaine may be conserved because of its crucial role as an osmolyte.

  19. Specification for the VERA Depletion Benchmark Suite

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Kang Seog [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2015-12-17

    CASL-X-2015-1014-000 iii Consortium for Advanced Simulation of LWRs EXECUTIVE SUMMARY The CASL neutronics simulator MPACT is under development for the neutronics and T-H coupled simulation for the pressurized water reactor. MPACT includes the ORIGEN-API and internal depletion module to perform depletion calculations based upon neutron-material reaction and radioactive decay. It is a challenge to validate the depletion capability because of the insufficient measured data. One of the detoured methods to validate it is to perform a code-to-code comparison for benchmark problems. In this study a depletion benchmark suite has been developed and a detailed guideline has been provided to obtain meaningful computational outcomes which can be used in the validation of the MPACT depletion capability.

  20. Ganglioside GM3 synthase depletion reverses neuropathic pain and small fiber neuropathy in diet-induced diabetic mice

    OpenAIRE

    Menichella, Daniela M; Jayaraj, Nirupa D; Wilson, Heather M; Ren, Dongjun; Flood, Kelsey; Wang, Xiao-Qi; Shum, Andrew; Miller, Richard J.; Paller, Amy S.

    2016-01-01

    Background Small fiber neuropathy is a well-recognized complication of type 2 diabetes and has been shown to be responsible for both neuropathic pain and impaired wound healing. In previous studies, we have demonstrated that ganglioside GM3 depletion by knockdown of GM3 synthase fully reverses impaired wound healing in diabetic mice. However, the role of GM3 in neuropathic pain and small fiber neuropathy in diabetes is unknown. Purpose Determine whether GM3 depletion is able to reverse neurop...

  1. Possible ozone depletions following nuclear explosions

    Science.gov (United States)

    Whitten, R. C.; Borucki, W. J.; Turco, R. P.

    1975-01-01

    The degree of depletion of the ozone layer ensuing after delivery of strategic nuclear warheads (5000 and 10,000 Mton) due to production of nitrogen oxides is theoretically assessed. Strong depletions are calculated for 16-km and 26-km altitudes, peaking 1-2 months after detonation and lasting for three years, while a significant depletion at 36 km would peak after one year. Assuming the explosions occur between 30 and 70 deg N, these effects should be much more pronounced in this region than over the Northern Hemisphere as a whole. It is concluded that Hampson's concern on this matter (1974) is well-founded.-

  2. Polar stratospheric clouds and ozone depletion

    Science.gov (United States)

    Toon, Owen B.; Turco, Richard P.

    1991-01-01

    A review is presented of investigations into the correlation between the depletion of ozone and the formation of polar stratospheric clouds (PSCs). Satellite measurements from Nimbus 7 showed that over the years the depletion from austral spring to austral spring has generally worsened. Approximately 70 percent of the ozone above Antarctica, which equals about 3 percent of the earth's ozone, is lost during September and October. Various hypotheses for ozone depletion are discussed including the theory suggesting that chlorine compounds might be responsible for the ozone hole, whereby chlorine enters the atmosphere as a component of chlorofluorocarbons produced by humans. The three types of PSCs, nitric acid trihydrate, slowly cooling water-ice, and rapidly cooling water-ice clouds act as important components of the Antarctic ozone depletion. It is indicated that destruction of the ozone will be more severe each year for the next few decades, leading to a doubling in area of the Antarctic ozone hole.

  3. [Hepatomioneuropathy secondary to mitochondrial DNA depletion].

    Science.gov (United States)

    Blanco-Barca, M O; Gómez-Lado, C; Campos-González, Y; Castro-Gago, M

    2007-04-01

    Mitochondrial DNA depletion (mtDNA) is an highly heterogeneous condition characterized by a decreased number of mtDNA copies. The patient is a 22-month-old girl with generalized hypotonia, marked weakness, respiratory failure, arterial hypertension, hyperlactacidemia, hepatosplenomegaly and mild hypertransaminasemia without hepatic failure neither hypoketotic hypoglycemia. Electromyographic findings were consistent with neuromyopathy and muscle biopsy suggested a neurogenic atrophy. Electron microscopy revealed lipid droplets, subsarcolemmal accumulation of mitochondrias and glycogen granules. Respiratory chain enzime activities were normal. Genetic study in muscle showed mtDNA depletion, and the diagnosis of spinal muscular atrophy caused by survival motoneuron gene deletion was excluded. This case might be a novel phenotype of mtDNA depletion which could be named hepatomioneuropatyc form. A normal result of respiratory chain enzimes in muscle doesn't excluded mtDNA depletion.

  4. Depleted bulk heterojunction colloidal quantum dot photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Barkhouse, D.A.R. [Department of Electrical and Computer Engineering, University of Toronto, 10 King' s College Road, Toronto, Ontario M5S 3G4 (Canada); IBM Thomas J. Watson Research Center, Kitchawan Road, Yorktown Heights, NY, 10598 (United States); Debnath, Ratan; Kramer, Illan J.; Zhitomirsky, David; Levina, Larissa; Sargent, Edward H. [Department of Electrical and Computer Engineering, University of Toronto, 10 King' s College Road, Toronto, Ontario M5S 3G4 (Canada); Pattantyus-Abraham, Andras G. [Department of Electrical and Computer Engineering, University of Toronto, 10 King' s College Road, Toronto, Ontario M5S 3G4 (Canada); Quantum Solar Power Corporation, 1055 W. Hastings, Ste. 300, Vancouver, BC, V6E 2E9 (Canada); Etgar, Lioz; Graetzel, Michael [Laboratory for Photonics and Interfaces, Institute of Chemical Sciences and Engineering, School of Basic Sciences, Swiss Federal Institute of Technology, CH-1015 Lausanne (Switzerland)

    2011-07-26

    The first solution-processed depleted bulk heterojunction colloidal quantum dot solar cells are presented. The architecture allows for high absorption with full depletion, thereby breaking the photon absorption/carrier extraction compromise inherent in planar devices. A record power conversion of 5.5% under simulated AM 1.5 illumination conditions is reported. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Depleted Bulk Heterojunction Colloidal Quantum Dot Photovoltaics

    KAUST Repository

    Barkhouse, D. Aaron R.

    2011-05-26

    The first solution-processed depleted bulk heterojunction colloidal quantum dot solar cells are presented. The architecture allows for high absorption with full depletion, thereby breaking the photon absorption/carrier extraction compromise inherent in planar devices. A record power conversion of 5.5% under simulated AM 1.5 illumination conditions is reported. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Effects of Riverbed Conductance on Stream Depletion

    Science.gov (United States)

    Lackey, G.; Neupauer, R. M.; Pitlick, J.

    2012-12-01

    In the western United States and other regions of the world where growing population and changing climates are threatening water supplies, accurate modeling of potential human impacts on water resources is becoming more important. Stream depletion, the reduction of surface water flow due to the extraction of groundwater from a hydraulically connected aquifer, is one of the more direct ways that development can alter water availability, degrade water quality and endanger aquatic habitats. These factors have made the accurate modeling of stream depletion an important step in the process of installing groundwater wells in regions that are susceptible to this phenomenon. Proper estimation of stream depletion requires appropriate parameterization of aquifer and streambed hydraulic properties. Although many studies have conducted numerical investigations to determine stream depletion at specific sites, they typically do not measure streambed hydraulic conductivity (Kr), but rather assume a representative value. In this work, we establish a hypothetical model aquifer that is 2000 m by 1600 m and has a meandering stream running through its center. The Kr of the model stream is varied from 1.0x10-9 m s-1 to 1.0x10-2 m s-1 in order to determine the sensitivity of the stream depletion calculations to this parameter. It was found that when Kr is in the lower part of this range, slight changes in K¬r lead to significant impacts on the calculated stream depletion values. We vary Kr along the stream channel according to naturally occurring patterns and demonstrate that alterations of the parameter over a few orders of magnitude can affect the estimated stream depletion caused by a well at a specified location. The numerical simulations show that the mean value of Kr and its spatial variability along the channel should be realistic to develop an accurate model of stream depletion.

  7. A theoretical model of atmospheric ozone depletion

    Science.gov (United States)

    Midya, S. K.; Jana, P. K.; Lahiri, T.

    1994-01-01

    A critical study on different ozone depletion and formation processes has been made and following important results are obtained: (i) From analysis it is shown that O3 concentration will decrease very minutely with time for normal atmosphere when [O], [O2] and UV-radiation remain constant. (ii) An empirical equation is established theoretically between the variation of ozone concentration and time. (iii) Special ozone depletion processes are responsible for the dramatic decrease of O3-concentration at Antarctica.

  8. No effects of ingesting or rinsing sucrose on depleted self-control performance.

    Science.gov (United States)

    Boyle, N B; Lawton, C L; Allen, R; Croden, F; Smith, K; Dye, L

    2016-02-01

    Self-control tasks appear to deplete a limited resource resulting in reduced subsequent self-control performance; a state of ego depletion. Evidence of reduced peripheral glucose by exertion of self-control, and attenuation of ego depletion by carbohydrate metabolism underpins the proposition that this macronutrient provides the energetic source of self-control. However, the demonstration of positive, non-metabolic effects on ego depletion when merely sensing carbohydrates orally contradicts this hypothesis. Recent studies have also failed to support both metabolic and non-metabolic accounts. The effects of ingesting or rinsing a carbohydrate (sucrose) and an artificially sweetened (sucralose) solution on capillary blood and interstitial glucose, and depleted self-control performance were examined in older adults. Forty, healthy, adults (50-65years) ingested and rinsed sucrose and sucralose solutions in a 2 (method)×2 (source), fully counterbalanced, repeated measures, crossover design. Capillary blood and interstitial glucose responses were assayed. Depleted self-control performance (induced by the Bakan visual processing task) on an attention switch task was assessed under each study condition. Ego depletion had no consistent effects on peripheral glucose levels and no significant effects of ingesting or rinsing sucrose on self-control were observed. The act of rinsing the solutions, independent of energetic content, resulted in a small, non-significant enhancement of performance on the attention switch task relative to ingesting the same solutions (RT: p=.05; accuracy: p=.09). In conclusion, a metabolic account of self-control was not supported. Whilst a positive effect of rinsing on depleted self-control performance was demonstrated, this was independent of energetic content. Findings suggest glucose is an unlikely physiological analogue for self-control resources.

  9. Horizontal spacing, depletion, and infill potential in the Austin chalk

    Energy Technology Data Exchange (ETDEWEB)

    Kyte, D.G.; Meehan, D.N.

    1996-12-31

    Estimated ultimate recoveries on a barrels per acre basis for Austin chalk wells were discussed. The study showed that the maximum six months consecutive production through the life of the well can be used to estimate ultimate recovery in horizontally drilled reservoirs. A statistical approach was used to help identify where the Austin chalk has been overdrilled and areas where infill potential exists. The barrels per acre data were analyzed by a method known as `moving domain`. This procedure involves stepping through the reservoir well by well and looking at it with respect to its nearest neighbors. To analyze for depletion, barrels per acre is compared to date of first production for groups of wells in an area, looking for declining values with time. Areas showing no evidence of depletion and having good recoveries are further studied for infill potential. By comparing effective densities in areas which are not yet being fully drained, an optimum spacing between wells can be determined for horizontal wells in a fractured chalk reservoir. An artificial neural network can also be used to provide qualitative predictions of well performance in developed reservoirs. 6 refs., 15 figs.

  10. New Approach For Prediction Groundwater Depletion

    Science.gov (United States)

    Moustafa, Mahmoud

    2017-01-01

    Current approaches to quantify groundwater depletion involve water balance and satellite gravity. However, the water balance technique includes uncertain estimation of parameters such as evapotranspiration and runoff. The satellite method consumes time and effort. The work reported in this paper proposes using failure theory in a novel way to predict groundwater saturated thickness depletion. An important issue in the failure theory proposed is to determine the failure point (depletion case). The proposed technique uses depth of water as the net result of recharge/discharge processes in the aquifer to calculate remaining saturated thickness resulting from the applied pumping rates in an area to evaluate the groundwater depletion. Two parameters, the Weibull function and Bayes analysis were used to model and analyze collected data from 1962 to 2009. The proposed methodology was tested in a nonrenewable aquifer, with no recharge. Consequently, the continuous decline in water depth has been the main criterion used to estimate the depletion. The value of the proposed approach is to predict the probable effect of the current applied pumping rates on the saturated thickness based on the remaining saturated thickness data. The limitation of the suggested approach is that it assumes the applied management practices are constant during the prediction period. The study predicted that after 300 years there would be an 80% probability of the saturated aquifer which would be expected to be depleted. Lifetime or failure theory can give a simple alternative way to predict the remaining saturated thickness depletion with no time-consuming processes such as the sophisticated software required.

  11. 76 FR 36176 - Fully Developed Claim (Fully Developed Claims-Applications for Compensation, Pension, DIC, Death...

    Science.gov (United States)

    2011-06-21

    ... From the Federal Register Online via the Government Publishing Office DEPARTMENT OF VETERANS AFFAIRS Fully Developed Claim (Fully Developed Claims--Applications for Compensation, Pension, DIC, Death Pension, and/or Accrued Benefits); Correction AGENCY: Veterans Benefits Administration, Department...

  12. Groundwater depletion embedded in international food trade

    Science.gov (United States)

    Dalin, Carole; Wada, Yoshihide; Kastner, Thomas; Puma, Michael J.

    2017-03-01

    Recent hydrological modelling and Earth observations have located and quantified alarming rates of groundwater depletion worldwide. This depletion is primarily due to water withdrawals for irrigation, but its connection with the main driver of irrigation, global food consumption, has not yet been explored. Here we show that approximately eleven per cent of non-renewable groundwater use for irrigation is embedded in international food trade, of which two-thirds are exported by Pakistan, the USA and India alone. Our quantification of groundwater depletion embedded in the world’s food trade is based on a combination of global, crop-specific estimates of non-renewable groundwater abstraction and international food trade data. A vast majority of the world’s population lives in countries sourcing nearly all their staple crop imports from partners who deplete groundwater to produce these crops, highlighting risks for global food and water security. Some countries, such as the USA, Mexico, Iran and China, are particularly exposed to these risks because they both produce and import food irrigated from rapidly depleting aquifers. Our results could help to improve the sustainability of global food production and groundwater resource management by identifying priority regions and agricultural products at risk as well as the end consumers of these products.

  13. The New MCNP6 Depletion Capability

    Energy Technology Data Exchange (ETDEWEB)

    Fensin, Michael Lorne [Los Alamos National Laboratory; James, Michael R. [Los Alamos National Laboratory; Hendricks, John S. [Los Alamos National Laboratory; Goorley, John T. [Los Alamos National Laboratory

    2012-06-19

    The first MCNP based inline Monte Carlo depletion capability was officially released from the Radiation Safety Information and Computational Center as MCNPX 2.6.0. Both the MCNP5 and MCNPX codes have historically provided a successful combinatorial geometry based, continuous energy, Monte Carlo radiation transport solution for advanced reactor modeling and simulation. However, due to separate development pathways, useful simulation capabilities were dispersed between both codes and not unified in a single technology. MCNP6, the next evolution in the MCNP suite of codes, now combines the capability of both simulation tools, as well as providing new advanced technology, in a single radiation transport code. We describe here the new capabilities of the MCNP6 depletion code dating from the official RSICC release MCNPX 2.6.0, reported previously, to the now current state of MCNP6. NEA/OECD benchmark results are also reported. The MCNP6 depletion capability enhancements beyond MCNPX 2.6.0 reported here include: (1) new performance enhancing parallel architecture that implements both shared and distributed memory constructs; (2) enhanced memory management that maximizes calculation fidelity; and (3) improved burnup physics for better nuclide prediction. MCNP6 depletion enables complete, relatively easy-to-use depletion calculations in a single Monte Carlo code. The enhancements described here help provide a powerful capability as well as dictate a path forward for future development to improve the usefulness of the technology.

  14. Silicon pixel detector prototyping in SOI CMOS technology

    Science.gov (United States)

    Dasgupta, Roma; Bugiel, Szymon; Idzik, Marek; Kapusta, Piotr; Kucewicz, Wojciech; Turala, Michal

    2016-12-01

    The Silicon-On-Insulator (SOI) CMOS is one of the most advanced and promising technology for monolithic pixel detectors design. The insulator layer that is implemented inside the silicon crystal allows to integrate sensors matrix and readout electronic on a single wafer. Moreover, the separation of electronic and substrate increases also the SOI circuits performance. The parasitic capacitances to substrate are significantly reduced, so the electronic systems are faster and consume much less power. The authors of this presentation are the members of international SOIPIX collaboration, that is developing SOI pixel detectors in 200 nm Lapis Fully-Depleted, Low-Leakage SOI CMOS. This work shows a set of advantages of SOI technology and presents possibilities for pixel detector design SOI CMOS. In particular, the preliminary results of a Cracow chip are presented.

  15. Performance of the INTPIX6 SOI pixel detector

    Science.gov (United States)

    Arai, Y.; Bugiel, Sz.; Dasgupta, R.; Idzik, M.; Kapusta, P.; Kucewicz, W.; Miyoshi, T.; Turala, M.

    2017-01-01

    Characterization of the monolithic pixel detector INPTIX6, designed at KEK and fabricated in Lapis 0.2 μ m Fully-Depleted, Low-Leakage Silicon-On-Insulator (SOI) CMOS technology, was performed. The INTPIX6 comprises a large area of 1408 × 896 integrating type squared pixels of 12 micron pitch. In this work the performance and measurement results of the prototypes produced on lower resistivity Czochralski type (CZ-n) and high resistivity floating zone (FZ-n) sensor wafers are presented. Using 241Am radioactive source the noise of INTPIX6 was measured, showing the ENC (Equivalent Noise Charge) of about 70 e-. The resolution calculated from the FWHM of the Iron-55 X-ray peak was about 100 e-. The radiation hardness of the SOI pixel detector was also investigated. The CZ-n type INTPIX6 received a dose of 60 krad and its performance has been continuously monitored during the irradiation.

  16. A Demonstration of TIA Using FD-SOI CMOS OPAMP for Far-Infrared Astronomy

    Science.gov (United States)

    Nagase, Koichi; Wada, Takehiko; Ikeda, Hirokazu; Arai, Yasuo; Ohno, Morifumi; Hanaoka, Misaki; Kanada, Hidehiro; Oyabu, Shinki; Hattori, Yasuki; Ukai, Sota; Suzuki, Toyoaki; Watanabe, Kentaroh; Baba, Shunsuke; Kochi, Chihiro; Yamamoto, Keita

    2016-07-01

    We are developing a fully depleted silicon-on-insulator (FD-SOI) CMOS readout integrated circuit (ROIC) operated at temperatures below ˜ 4 K. Its application is planned for the readout circuit of high-impedance far-infrared detectors for astronomical observations. We designed a trans-impedance amplifier (TIA) using a CMOS operational amplifier (OPAMP) with FD-SOI technique. The TIA is optimized to readout signals from a germanium blocked impurity band (Ge BIB) detector which is highly sensitive to wavelengths of up to ˜ 200 \\upmu m. For the first time, we demonstrated the FD-SOI CMOS OPAMP combined with the Ge BIB detector at 4.5 K. The result promises to solve issues faced by conventional cryogenic ROICs.

  17. A Novel Nanoscale FDSOI MOSFET with Block-Oxide

    Directory of Open Access Journals (Sweden)

    Jyi-Tsong Lin

    2013-01-01

    Full Text Available We demonstrate improved device performance by applying oxide sidewall spacer technology to a block-oxide-enclosed Si body to create a fully depleted silicon-on-insulator (FDSOI nMOSFET, which overcomes the need for a uniform ultrathin silicon film. The presence of block-oxide along the sidewalls of the Si body significantly reduces the influence of drain bias over the channel. The proposed FDSOI structure therefore outperforms conventional FDSOI with regard to its drain-induced barrier lowering (DIBL, on/off current ratio, subthreshold swing, and threshold voltage rolloff. The new FDSOI structure is in fact shown to behave similarly to an ultrathin body (UTB SOI but without the associated disadvantages and technological challenges of the ultrathin film, because a thick Si body allows for reduced sensitivity to self-heating, thereby improving thermal stability.

  18. A novel SOI-DTMOS structure from circuit performance considerations

    Institute of Scientific and Technical Information of China (English)

    宋文斌; 毕津顺; 韩郑生

    2009-01-01

    The performance of a partially depleted silicon-on-insulator (PDSOI) dynamic threshold MOSFET (DT-MOS) is degraded by the large body capacitance and body resistance. Increasing silicon film thickness can reduce the body resistance greatly, but the body capacitance also increases significantly at the same time. To solve this problem, a novel SOI DTMOSFET structure (drain/source-on-local-insulator structure) is proposed. From ISE simulation, the improvement in delay, obtained by optimizing p-n junction depth and silicon film thickness, is very significant. At the same time, we find that the drive current increases significantly as the thickness of the silicon film increases. Furthermore, only one additional mask is needed to form the local SIMOX, and other fabrication processes are fully compatible with conventional CMOS/SOI technology.

  19. Combination of volatile and non-volatile functions in a single memory cell and its scalability

    Science.gov (United States)

    Kim, Hyungjin; Hwang, Sungmin; Lee, Jong-Ho; Park, Byung-Gook

    2017-04-01

    A single memory cell which combines volatile memory and non-volatile memory functions has been demonstrated with an independent asymmetric dual-gate structure. Owing to the second gate whose dielectric is composed of oxide/nitride/oxide layers, floating body effect was observed even on a fully depleted silicon-on-insulator device and the non-volatile memory function was measured. In addition, read retention characteristics of the volatile memory function depending on the non-volatile memory state were evaluated and analyzed. Further scalability in body thickness was also verified through simulation studies. These results indicate that the proposed device is a promising candidate for high-density embedded memory applications.

  20. Sharp-switching band-modulation back-gated devices in advanced FDSOI technology

    Science.gov (United States)

    El Dirani, Hassan; Fonteneau, Pascal; Solaro, Yohann; Legrand, Charles-Alex; Marin-Cudraz, David; Ferrari, Philippe; Cristoloveanu, Sorin

    2017-02-01

    A band-modulation device with a free top surface, named Z3-FET (Zero front-gate, Zero swing slope and Zero impact ionization) and fabricated in the most advanced Fully Depleted Silicon-On-Insulator technology, is demonstrated experimentally. Since the device has no front gate, the operation mechanism is controlled by two adjacent heavily doped buried ground planes acting as back-gates. Characteristics such as sharp quasi-vertical switching, low leakage, and tunable trigger voltage are measured and discussed. We explore several variants (thin and thick silicon or SiGe body) and show promising results in terms of high current, switching performance and ESD capability with relatively low back-gate and drain bias operation.

  1. UTBB FDSOI: Evolution and opportunities

    Science.gov (United States)

    Monfray, Stephane; Skotnicki, Thomas

    2016-11-01

    As today's 28 nm FDSOI (Fully Depleted Silicon On Insulator) technology is at the industrialization level, this paper aims to summarize the key advantages allowed by the thin BOX (Buried Oxide) of the FDSOI, through the technology evolution but also new opportunities, among logic applications and extending the possibilities offered by the platform. We will summarize how the advantages provided by the thin BOX have been first explored and developed, and how the back biasing techniques are the key to the outstanding performances provided by the FDSOI at low voltage. Then, as the FDSOI technology is also a solution to develop innovative platforms and applications, we will detail some opportunities. In particular, we will present monolithic 3D integration, ultra-low power devices for IoT (Internet of Things) and ultra-sensitive sensors.

  2. Assessment of 28 nm UTBB FD-SOI technology platform for RF applications: Figures of merit and effect of parasitic elements

    Science.gov (United States)

    Kazemi Esfeh, B.; Kilchytska, V.; Barral, V.; Planes, N.; Haond, M.; Flandre, D.; Raskin, J.-P.

    2016-03-01

    This work provides a detailed study of 28 nm fully-depleted silicon-on-insulator (FD-SOI) planar ultra-thin body and BOX (UTBB) MOSFETs for high frequency applications. All parasitic elements such as the parasitic gate and source/drain series resistances, total capacitances are extracted and their effects on RF performance are analyzed and compared with previous work on similar devices. Two main RF figures of merit (FoM) such as the current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) are determined. It is shown that fT of ∼280 GHz and fmax of ∼250 GHz are achievable in the shortest devices. Based on the extracted parameters, the validation of the small-signal equivalent circuit used for modeling UTBB MOSFETs is investigated by comparing simulated and measured S-parameters.

  3. Development of a pixel sensor with fine space-time resolution based on SOI technology for the ILC vertex detector

    Science.gov (United States)

    Ono, Shun; Togawa, Manabu; Tsuji, Ryoji; Mori, Teppei; Yamada, Miho; Arai, Yasuo; Tsuboyama, Toru; Hanagaki, Kazunori

    2017-02-01

    We have been developing a new monolithic pixel sensor with silicon-on-insulator (SOI) technology for the International Linear Collider (ILC) vertex detector system. The SOI monolithic pixel detector is realized using standard CMOS circuits fabricated on a fully depleted sensor layer. The new SOI sensor SOFIST can store both the position and timing information of charged particles in each 20×20 μm2 pixel. The position resolution is further improved by the position weighted with the charges spread to multiple pixels. The pixel also records the hit timing with an embedded time-stamp circuit. The sensor chip has column-parallel analog-to-digital conversion (ADC) circuits and zero-suppression logic for high-speed data readout. We are designing and evaluating some prototype sensor chips for optimizing and minimizing the pixel circuit.

  4. High Performance P-Channel Schottky Barrier MOSFETs with Self-Aligned PtSi Source/Drain on Thin Film SOI Substrate

    Institute of Scientific and Technical Information of China (English)

    ZHU Shi-Yang; LI Ming-Fu

    2005-01-01

    @@ P-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with PtSi Schottky barrier source/drain, high-k gate dielectric and metal gate electrode were fabricated on a thin p-type silicon-on-insulator (SOI) substrateusing a simplified low temperature process. The device works on a fully-depleted accumulation-mode and hasan excellent electrical performance. It reaches Ion/Ioff ratio of about 107, subthreshold swing of 65mV/decade and saturation drain current of Ids= 8.8μA/μm at |Vg - Vth| = |Vd| = 1 V for devices with the channel length 4.0μm and the equivalent oxide thickness 2.0nm. Compared to the corresponding bulk-Si counterparts, SOI p-SBMOSFETs have smaller off-state current due to reduction of the PtSi/Si contact area.

  5. Measurements of charge diffusion in deep-depletion CCDs by optical diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Cease, H.; Diehl, H.T.; Estrada, J.; Flaugher, B.; Scarpine, V.; /Fermilab

    2007-10-01

    The charge diffusion is measured in back illuminated, fully depleted, 250 {micro}m thick CCDs by imaging the diffraction pattern of a double slit. The CCDs studied are the focal plane detectors for the Dark Energy Camera (DECam) instrument currently under construction for the Dark Energy Survey (DES). The results presented here indicate that the dispersion of charge due to diffusion can be kept below the DES specification ({sigma}{sub d} < 7.0 {micro}m).

  6. NEW RSW & Wall Medium Fully Tetrahedral Grid

    Data.gov (United States)

    National Aeronautics and Space Administration — New Medium Fully Tetrahedral RSW Grid with viscous wind tunnel wall at the root. This grid is for a node-based unstructured solver. Medium Tet: Quad Surface Faces= 0...

  7. NEW RSW & Wall Fine Fully Tetrahedral Grid

    Data.gov (United States)

    National Aeronautics and Space Administration — NEW RSW Fine Fully Tetrahedral Grid with Viscous Wind Tunnel wall at the root. This grid is for a node-based unstructured solver. Note that the CGNS file is very...

  8. Automated fully-stressed design with NASTRAN

    Science.gov (United States)

    Wallerstein, D. V.; Haggenmacher, G. W.

    1976-01-01

    An automated strength sizing capability is described. The technique determines the distribution of material among the elements of a structural model. The sizing is based on either a fully stressed design or a scaled feasible fully stressed design. Results obtained from the application of the strength sizing to the structural sizing of a composite material wing box using material strength allowables are presented. These results demonstrate the rapid convergence of the structural sizes to a usable design.

  9. Ego depletion in visual perception: Ego-depleted viewers experience less ambiguous figure reversal.

    Science.gov (United States)

    Wimmer, Marina C; Stirk, Steven; Hancock, Peter J B

    2017-02-22

    This study examined the effects of ego depletion on ambiguous figure perception. Adults (N = 315) received an ego depletion task and were subsequently tested on their inhibitory control abilities that were indexed by the Stroop task (Experiment 1) and their ability to perceive both interpretations of ambiguous figures that was indexed by reversal (Experiment 2). Ego depletion had a very small effect on reducing inhibitory control (Cohen's d = .15) (Experiment 1). Ego-depleted participants had a tendency to take longer to respond in Stroop trials. In Experiment 2, ego depletion had small to medium effects on the experience of reversal. Ego-depleted viewers tended to take longer to reverse ambiguous figures (duration to first reversal) when naïve of the ambiguity and experienced less reversal both when naïve and informed of the ambiguity. Together, findings suggest that ego depletion has small effects on inhibitory control and small to medium effects on bottom-up and top-down perceptual processes. The depletion of cognitive resources can reduce our visual perceptual experience.

  10. The modality effect of ego depletion: Auditory task modality reduces ego depletion.

    Science.gov (United States)

    Li, Qiong; Wang, Zhenhong

    2016-08-01

    An initial act of self-control that impairs subsequent acts of self-control is called ego depletion. The ego depletion phenomenon has been observed consistently. The modality effect refers to the effect of the presentation modality on the processing of stimuli. The modality effect was also robustly found in a large body of research. However, no study to date has examined the modality effects of ego depletion. This issue was addressed in the current study. In Experiment 1, after all participants completed a handgrip task, one group's participants completed a visual attention regulation task and the other group's participants completed an auditory attention regulation task, and then all participants again completed a handgrip task. The ego depletion phenomenon was observed in both the visual and the auditory attention regulation task. Moreover, participants who completed the visual task performed worse on the handgrip task than participants who completed the auditory task, which indicated that there was high ego depletion in the visual task condition. In Experiment 2, participants completed an initial task that either did or did not deplete self-control resources, and then they completed a second visual or auditory attention control task. The results indicated that depleted participants performed better on the auditory attention control task than the visual attention control task. These findings suggest that altering task modality may reduce ego depletion.

  11. Ozone depletion and chlorine loading potentials

    Science.gov (United States)

    Pyle, John A.; Wuebbles, Donald J.; Solomon, Susan; Zvenigorodsky, Sergei; Connell, Peter; Ko, Malcolm K. W.; Fisher, Donald A.; Stordal, Frode; Weisenstein, Debra

    1991-01-01

    The recognition of the roles of chlorine and bromine compounds in ozone depletion has led to the regulation or their source gases. Some source gases are expected to be more damaging to the ozone layer than others, so that scientific guidance regarding their relative impacts is needed for regulatory purposes. Parameters used for this purpose include the steady-state and time-dependent chlorine loading potential (CLP) and the ozone depletion potential (ODP). Chlorine loading potentials depend upon the estimated value and accuracy of atmospheric lifetimes and are subject to significant (approximately 20-50 percent) uncertainties for many gases. Ozone depletion potentials depend on the same factors, as well as the evaluation of the release of reactive chlorine and bromine from each source gas and corresponding ozone destruction within the stratosphere.

  12. Plasmonic nanoprobes for stimulated emission depletion microscopy

    CERN Document Server

    Cortes, Emiliano; Sinclair, Hugo G; Guldbrand, Stina; Peveler, William J; Davies, Timothy; Parrinello, Simona; Görlitz, Frederik; Dunsby, Chris; Neil, Mark A A; Sivan, Yonatan; Parkin, Ivan P; French, Paul M; Maier, Stefan A

    2016-01-01

    Plasmonic nanoparticles influence the absorption and emission processes of nearby emitters due to local enhancements of the illuminating radiation and the photonic density of states. Here, we use the plasmon resonance of metal nanoparticles in order to enhance the stimulated depletion of excited molecules for super-resolved microscopy. We demonstrate stimulated emission depletion (STED) microscopy with gold nanorods with a long axis of only 26 nm and a width of 8 nm that provide an enhancement of the resolution compared to fluorescent-only probes without plasmonic components irradiated with the same depletion power. These novel nanoparticle-assisted STED probes represent a ~2x10^3 reduction in probe volume compared to previously used nanoparticles and we demonstrate their application to the first plasmon-assisted STED cellular imaging. We also discuss their current limitations.

  13. Molten-Salt Depleted-Uranium Reactor

    CERN Document Server

    Dong, Bao-Guo; Gu, Ji-Yuan

    2015-01-01

    The supercritical, reactor core melting and nuclear fuel leaking accidents have troubled fission reactors for decades, and greatly limit their extensive applications. Now these troubles are still open. Here we first show a possible perfect reactor, Molten-Salt Depleted-Uranium Reactor which is no above accident trouble. We found this reactor could be realized in practical applications in terms of all of the scientific principle, principle of operation, technology, and engineering. Our results demonstrate how these reactors can possess and realize extraordinary excellent characteristics, no prompt critical, long-term safe and stable operation with negative feedback, closed uranium-plutonium cycle chain within the vessel, normal operation only with depleted-uranium, and depleted-uranium high burnup in reality, to realize with fission nuclear energy sufficiently satisfying humanity long-term energy resource needs, as well as thoroughly solve the challenges of nuclear criticality safety, uranium resource insuffic...

  14. Self-regulation, ego depletion, and inhibition.

    Science.gov (United States)

    Baumeister, Roy F

    2014-12-01

    Inhibition is a major form of self-regulation. As such, it depends on self-awareness and comparing oneself to standards and is also susceptible to fluctuations in willpower resources. Ego depletion is the state of reduced willpower caused by prior exertion of self-control. Ego depletion undermines inhibition both because restraints are weaker and because urges are felt more intensely than usual. Conscious inhibition of desires is a pervasive feature of everyday life and may be a requirement of life in civilized, cultural society, and in that sense it goes to the evolved core of human nature. Intentional inhibition not only restrains antisocial impulses but can also facilitate optimal performance, such as during test taking. Self-regulation and ego depletion- may also affect less intentional forms of inhibition, even chronic tendencies to inhibit. Broadly stated, inhibition is necessary for human social life and nearly all societies encourage and enforce it.

  15. Depletion of the nuclear Fermi sea

    CERN Document Server

    Rios, A; Dickhoff, W H

    2009-01-01

    The short-range and tensor components of the bare nucleon-nucleon interaction induce a sizeable depletion of low momenta in the ground state of a nuclear many-body system. The self-consistent Green's function method within the ladder approximation provides an \\textit{ab-initio} description of correlated nuclear systems that accounts properly for these effects. The momentum distribution predicted by this approach is analyzed in detail, with emphasis on the depletion of the lowest momentum state. The temperature, density, and nucleon asymmetry (isospin) dependence of the depletion of the Fermi sea is clarified. A connection is established between the momentum distribution and the time-ordered components of the self-energy, which allows for an improved interpretation of the results. The dependence on the underlying nucleon-nucleon interaction provides quantitative estimates of the importance of short-range and tensor correlations in nuclear systems.

  16. Sensitivity study of control rod depletion coefficients

    OpenAIRE

    Blomberg, Joel

    2015-01-01

    This report investigates the sensitivity of the control rod depletion coefficients, Sg, to different input parameters and how this affects the accumulated 10B depletion, β. Currently the coefficients are generated with PHOENIX4, but the geometries can be more accurately simulated in McScram. McScram is used to calculate Control Rod Worth, which in turn is used to calculate Nuclear End Of Life, and Sg cannot be generated in the current version of McScram. Therefore, it is also analyzed whether...

  17. Contrasts between Antarctic and Arctic ozone depletion.

    Science.gov (United States)

    Solomon, Susan; Portmann, Robert W; Thompson, David W J

    2007-01-09

    This work surveys the depth and character of ozone depletion in the Antarctic and Arctic using available long balloon-borne and ground-based records that cover multiple decades from ground-based sites. Such data reveal changes in the range of ozone values including the extremes observed as polar air passes over the stations. Antarctic ozone observations reveal widespread and massive local depletion in the heart of the ozone "hole" region near 18 km, frequently exceeding 90%. Although some ozone losses are apparent in the Arctic during particular years, the depth of the ozone losses in the Arctic are considerably smaller, and their occurrence is far less frequent. Many Antarctic total integrated column ozone observations in spring since approximately the 1980s show values considerably below those ever observed in earlier decades. For the Arctic, there is evidence of some spring season depletion of total ozone at particular stations, but the changes are much less pronounced compared with the range of past data. Thus, the observations demonstrate that the widespread and deep ozone depletion that characterizes the Antarctic ozone hole is a unique feature on the planet.

  18. Global Warming: Lessons from Ozone Depletion

    Science.gov (United States)

    Hobson, Art

    2010-01-01

    My teaching and textbook have always covered many physics-related social issues, including stratospheric ozone depletion and global warming. The ozone saga is an inspiring good-news story that's instructive for solving the similar but bigger problem of global warming. Thus, as soon as students in my physics literacy course at the University of…

  19. Global Warming: Lessons from Ozone Depletion

    Science.gov (United States)

    Hobson, Art

    2010-01-01

    My teaching and textbook have always covered many physics-related social issues, including stratospheric ozone depletion and global warming. The ozone saga is an inspiring good-news story that's instructive for solving the similar but bigger problem of global warming. Thus, as soon as students in my physics literacy course at the University of…

  20. “When the going gets tough, who keeps going?” Depletion sensitivity moderates the ego-depletion effect

    Science.gov (United States)

    Salmon, Stefanie J.; Adriaanse, Marieke A.; De Vet, Emely; Fennis, Bob M.; De Ridder, Denise T. D.

    2014-01-01

    Self-control relies on a limited resource that can get depleted, a phenomenon that has been labeled ego-depletion. We argue that individuals may differ in their sensitivity to depleting tasks, and that consequently some people deplete their self-control resource at a faster rate than others. In three studies, we assessed individual differences in depletion sensitivity, and demonstrate that depletion sensitivity moderates ego-depletion effects. The Depletion Sensitivity Scale (DSS) was employed to assess depletion sensitivity. Study 1 employs the DSS to demonstrate that individual differences in sensitivity to ego-depletion exist. Study 2 shows moderate correlations of depletion sensitivity with related self-control concepts, indicating that these scales measure conceptually distinct constructs. Study 3 demonstrates that depletion sensitivity moderates the ego-depletion effect. Specifically, participants who are sensitive to depletion performed worse on a second self-control task, indicating a stronger ego-depletion effect, compared to participants less sensitive to depletion. PMID:25009523

  1. “When the going gets tough, who keeps going?” Depletion sensitivity moderates the ego-depletion effect

    NARCIS (Netherlands)

    Salmon, S.J.; Adriaanse, M.A.; Vet, de E.W.M.L.; Fennis, B.M.; Ridder, de D.T.D.

    2014-01-01

    Self-control relies on a limited resource that can get depleted, a phenomenon that has been labeled ego-depletion. We argue that individuals may differ in their sensitivity to depleting tasks, and that consequently some people deplete their self-control resource at a faster rate than others. In thre

  2. How Depleted is the MORB mantle?

    Science.gov (United States)

    Hofmann, A. W.; Hart, S. R.

    2015-12-01

    Knowledge of the degree of mantle depletion of highly incompatible elements is critically important for assessing Earth's internal heat production and Urey number. Current views of the degree of MORB source depletion are dominated by Salters and Stracke (2004), and Workman and Hart (2005). The first is based on an assessment of average MORB compositions, whereas the second considers trace element data of oceanic peridotites. Both require an independent determination of one absolute concentration, Lu (Salters & Stracke), or Nd (Workman & Hart). Both use parent-daughter ratios Lu/Hf, Sm/Nd, and Rb/Sr calculated from MORB isotopes combined with continental-crust extraction models, as well as "canonical" trace element ratios, to boot-strap the full range of trace element abundances. We show that the single most important factor in determining the ultimate degree of incompatible element depletion in the MORB source lies in the assumptions about the timing of continent extraction, exemplified by continuous extraction versus simple two-stage models. Continued crust extraction generates additional, recent mantle depletion, without affecting the isotopic composition of the residual mantle significantly. Previous emphasis on chemical compositions of MORB and/or peridotites has tended to obscure this. We will explore the effect of different continent extraction models on the degree of U, Th, and K depletion in the MORB source. Given the uncertainties of the two most popular models, the uncertainties of U and Th in DMM are at least ±50%, and this impacts the constraints on the terrestrial Urey ratio. Salters, F.J.M. and Stracke, A., 2004, Geochem. Geophys. Geosyst. 5, Q05004. Workman, R.K. and Hart, S.R., 2005, EPSL 231, 53-72.

  3. Fully Distributed Cooperative Motion of Group Robots

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    This paper is focused on the fully distributed cooperative motion of group robots and proposes a new approach. Each robot has a local sensing ability and a simple action selection strategy. Computational complexity is decreased by the fully distributed architecture and the information insufficiency is solved by the interaction between the robots and the environment. Variable loop and random method are used to deal with the fluctuation and equity selection problem and the rapidity and reasonabiliiy are guaranteed. Some simulations have proved the effectiveness of the proposed approach.

  4. Optimality of a Fully Stressed Design

    Science.gov (United States)

    Patnaik, Surya N.; Hopkins, Dale A.

    1998-01-01

    For a truss a fully stressed state is reached and when all its members are utilized to their full strength capacity. Historically, engineers considered such a design optimum. But recently this optimality has been questioned, especially since the weight of the structure is not explicitly used in fully stressed design calculations. This paper examines optimality of the full stressed design (FSD) with analytical and graphical illustrations. Solutions for a set of examples obtained by using the FSD method and optimization methods numerically confirm the optimality of the FSD. The FSD, which can be obtained with a small amount of calculation, can be extended to displacement constraints and to nontruss-type structures.

  5. Parametrization of Fully Dressed Quark Propagator

    Institute of Scientific and Technical Information of China (English)

    MA Wei-Xing; ZHU Ji-Zhen; ZHOU Li-Juan; SHEN Peng-Nian; HU Zhao-Hui

    2005-01-01

    Based on an extensive study of the Dyson-Schwinger equations for a fully dressed quark propagator in the "rainbow" approximation, a parametrized form of the quark propagator is suggested. The corresponding quark selfform of the quark propagator proposed in this work describes a confining quark propagation, and is quite convenient to be used in any numerical calculations.

  6. Fully Integrated Biochip Platforms for Advanced Healthcare

    Directory of Open Access Journals (Sweden)

    Giovanni De Micheli

    2012-08-01

    Full Text Available Recent advances in microelectronics and biosensors are enabling developments of innovative biochips for advanced healthcare by providing fully integrated platforms for continuous monitoring of a large set of human disease biomarkers. Continuous monitoring of several human metabolites can be addressed by using fully integrated and minimally invasive devices located in the sub-cutis, typically in the peritoneal region. This extends the techniques of continuous monitoring of glucose currently being pursued with diabetic patients. However, several issues have to be considered in order to succeed in developing fully integrated and minimally invasive implantable devices. These innovative devices require a high-degree of integration, minimal invasive surgery, long-term biocompatibility, security and privacy in data transmission, high reliability, high reproducibility, high specificity, low detection limit and high sensitivity. Recent advances in the field have already proposed possible solutions for several of these issues. The aim of the present paper is to present a broad spectrum of recent results and to propose future directions of development in order to obtain fully implantable systems for the continuous monitoring of the human metabolism in advanced healthcare applications.

  7. Transport properties of fully screened Kondo models

    NARCIS (Netherlands)

    Hörig, Christoph B M; Mora, Christophe; Schuricht, Dirk

    2014-01-01

    We study the nonequilibrium transport properties of fully (exactly) screened Kondo quantum dots subject to a finite bias voltage or a finite temperature. First, we calculate the Fermi-liquid coefficients of the conductance for models with arbitrary spin, i.e., its leading behavior for small bias vol

  8. A Fully Automated Penumbra Segmentation Tool

    DEFF Research Database (Denmark)

    Nagenthiraja, Kartheeban; Ribe, Lars Riisgaard; Hougaard, Kristina Dupont

    2012-01-01

    salavageable tissue, quickly and accurately. We present a fully Automated Penumbra Segmentation (APS) algorithm using PWI and DWI images. We compare automatically generated PWI-DWI mismatch mask to mask outlined manually by experts, in 168 patients. Method: The algorithm initially identifies PWI lesions...

  9. Learner Perspectives on Fully Online Language Learning

    Science.gov (United States)

    Sun, Susan Y. H.

    2014-01-01

    This study builds on this author's 2011 article in which the author reflects on the pedagogical challenges and resultant changes made while teaching two fully online foreign language papers over a four-year period (Y. H. S. Sun (2011). Online language teaching: The pedagogical challenges. "Knowledge Management & E-Learning: An…

  10. Neutron-activation revisited: the depletion and depletion-activation models.

    Science.gov (United States)

    Abdel-Rahman, Wamied; Podgorsak, Ervin B

    2005-02-01

    The growth of a radioactive daughter in neutron activation is commonly described with the saturation model that ignores the consumption of parent nuclei during the radio-activation process. This approach is not valid when radioactive sources with high specific activities are produced or when the particle fluence rates used are very high. Assuming a constant neutron fluence rate throughout the activation target, a neutron-activation model that accounts for the depletion in parent nuclei is introduced. This depletion model is governed by relationships similar to those describing the parent-daughter-granddaughter decay series, and, in contrast to the saturation model, correctly predicts the practical limit of the daughter specific activity, irrespective of the particle fluence rate. Also introduced is a neutron-activation model that in addition to parent depletion accounts for the neutron activation of daughter nuclei in situations where the cross section for this effect is high. The model is referred to as the depletion-activation model and it provides the most realistic description for the daughter specific activity in neutron activation. Three specific neutron activation examples of interest to medical physics are presented: activation of molybdenum-98 into molybdenum-99 described by the saturation model; activation of cobalt-59 into cobalt-60 described by the depletion model; and activation of iridium-191 into iridium-192 described by the depletion-activation model.

  11. Computer simulation for the formation of the insulator layer of silicon-on-insulator devices by N sup + and O sup + Co-implantation

    CERN Document Server

    Lin Qing; Xie Xin Yun; Lin Chenglu; Liu Xiang Hua

    2002-01-01

    A buried sandwiched layer consisting of silicon dioxide (upper part), silicon oxynitride (medium part) and silicon nitride (lower part) is formed by N sup + and O sup + co-implantation in silicon wafers at a constant temperature of 550 degree C. The microstructure is performed by cross-sectional transmission electron microscopy. To predict the quality of the buried sandwiched layer, the authors study the computer simulation for the formation of the SIMON (separated by implantation of oxygen and nitrogen) structure. The simulation program for SIMOX (separated by implantation of oxygen) is improved in order to be applied in O sup + and N sup + co-implantation on the basis of different formation mechanism between SIMOX and SIMNI (separated by implantation of nitrogen) structures. There is a good agreement between experiment and simulation results verifying the theoretical model and presumption in the program

  12. A Laboratory Project on the Theory, Fabrication, and Characterization of a Silicon-on-Insulator Micro-Comb Drive Actuator with Fixed-Fixed Beams

    Science.gov (United States)

    Abbas, K.; Leseman, Z. C.

    2012-01-01

    A laboratory course on the theory, fabrication, and characterization of microelectromechanical systems (MEMS) devices for a multidisciplinary audience of graduate students at the University of New Mexico, Albuquerque, has been developed. Hands-on experience in the cleanroom has attracted graduate students from across the university's engineering…

  13. High-responsivity 40 Gbit/s InGaAs/InP PIN photodetectors integrated on silicon-on-insulator waveguide circuits

    Science.gov (United States)

    Dongdong, Yin; Tingting, He; Qin, Han; Qianqian, Lü; Yejin, Zhang; Xiaohong, Yang

    2016-11-01

    This paper presents a high-responsivity and high-speed InGaAs/InP PIN photodetector integrated onto the silicon waveguide substrate utilizing the divinyltetramethyldisiloxane-benzocyclobutene (DVS-BCB) adhesive bonding method. A grating coupler is adopted to couple light from the fiber to the silicon waveguide. Light in the silicon photonic waveguide is evanescently coupled into the photodetector. The integrated photodetector structure is first simulated using the FDTD (finite difference time domain) solutions software and the simulation results show a detection efficiency of 95%. According to the simulation result, the integrated photodetector is fabricated. The measured responsivity of the fabricated integrated photodetector with a detection length of 30 μm is 0.89 A/W excluding the coupling loss between the fiber and the grating coupler and the silicon propagation loss at the wavelength of 1550 nm with a reverse bias voltage of 3 V. Measured 3-dB bandwidth is 27 GHz using the Lightwave Component Analyzer (LCA). The eye diagram signal test results indicate that the photodetector can operate at a high speed of 40 Gbit/s. The integrated photodetector is of great significance in the silicon-based optoelectronic integrated chip which can be applied to the optical communication and the super node data transmission chip of the high-performance computer. Project supported by the High-Tech Research and Development Program of China (Nos. 2015AA016904, 2015AA012302), the National Basic Research Program of China (Nos. 2012CB933503, 2013CB932904), and the National Natural Foundation of China (Nos. 61274069, 61176053, 61021003, 61435002).

  14. Tunable filter based on silicon-on-insulator microring resonator%SoI基微环谐振可调谐滤波器

    Institute of Scientific and Technical Information of China (English)

    姜宏伟; 吴远大

    2011-01-01

    采用电子束光刻和ICP刻蚀等工艺制作出绝缘体上Si(SoI)基纳米线波导微环谐振(MRR)滤波器,波导截面尺寸为300 nm×320 nm,微环半径为5 μm.测试结果表明,器件的自由频谱宽度(FSR)为16.8nm,1.55μm波长附近的消光比(ER)为18.1 dB.通过对MRR滤波器进行热光调制,在21.4~60.0℃温度范围内实现了4.8 nm波长范围的可调谐滤波特性,热光调谐效率达到0.12nm/℃.%Microring-resonator filters are fabricated by E-beam photolithography and inductive-coupled-plasma(ICP) etching technology. The cross-section size of the strip waveguides is 300 nm×320 ran,and the bending radius of the microring is 5 fun. The measured results show that the free spectral range (FSR) and extinction ratio (ER) at the wavelength of 1550 nm are 16. 8 nm and 18.1 dB,respectively. After thermo-optic modulation, the tunable filter wavelength range reaches 4. 8 nm,and the tuning efficiency is 0.12 nm /℃.

  15. A 94GHz Temperature Compensated Low Noise Amplifier in 45nm Silicon-on-Insulator Complementary Metal-Oxide Semiconductor (SOI CMOS)

    Science.gov (United States)

    2014-01-01

    discovering techniques to build wide temperature range electronics for millimeter wave imaging applications. Realization of this plan has resulted in a...State Circuits. 41.12 (December 2006): 2992-2997. 8. De Vida , G., and G. Iannaccone. “An Ultra-Low Power, Temperature Compensated Voltage

  16. Strain mapping with nm-scale resolution for the silicon-on-insulator generation of semiconductor devices by advanced electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Cooper, David; Denneulin, Thibaud; Barnes, Jean-Paul; Hartmann, Jean-Michel; Hutin, Louis; Le Royer, Cyrille [CEA, LETI France MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Beche, Armand [CEA, LETI, and FEI France MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Rouviere, Jean-Luc [CEA, INAC, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)

    2012-12-15

    Strain engineering in the conduction channel is a cost effective method of boosting the performance in state-of-the-art semiconductor devices. However, given the small dimensions of these devices, it is difficult to quantitatively measure the strain with the required spatial resolution. Three different transmission electron microscopy techniques, high-angle annular dark field scanning transmission electron microscopy, dark field electron holography, and nanobeam electron diffraction have been applied to measure the strain in simple bulk and SOI calibration specimens. These techniques are then applied to different gate length SiGe SOI pFET devices in order to measure the strain in the conduction channel. For these devices, improved spatial resolution is required, and strain maps with spatial resolutions as good as 1 nm have been achieved. Finally, we discuss the relative advantages and disadvantages of using these three different techniques when used for strain measurement.

  17. A Laboratory Project on the Theory, Fabrication, and Characterization of a Silicon-on-Insulator Micro-Comb Drive Actuator with Fixed-Fixed Beams

    Science.gov (United States)

    Abbas, K.; Leseman, Z. C.

    2012-01-01

    A laboratory course on the theory, fabrication, and characterization of microelectromechanical systems (MEMS) devices for a multidisciplinary audience of graduate students at the University of New Mexico, Albuquerque, has been developed. Hands-on experience in the cleanroom has attracted graduate students from across the university's engineering…

  18. Replacements For Ozone-Depleting Foaming Agents

    Science.gov (United States)

    Blevins, Elana; Sharpe, Jon B.

    1995-01-01

    Fluorinated ethers used in place of chlorofluorocarbons and hydrochlorofluorocarbons. Replacement necessary because CFC's and HCFC's found to contribute to depletion of ozone from upper atmosphere, and manufacture and use of them by law phased out in near future. Two fluorinated ethers do not have ozone-depletion potential and used in existing foam-producing equipment, designed to handle liquid blowing agents soluble in chemical ingredients that mixed to make foam. Any polyurethane-based foams and several cellular plastics blown with these fluorinated ethers used in processes as diverse as small batch pours, large sprays, or double-band lamination to make insulation for private homes, commercial buildings, shipping containers, and storage tanks. Fluorinated ethers proved useful as replacements for CFC refrigerants and solvents.

  19. Assessment of Preferred Depleted Uranium Disposal Forms

    Energy Technology Data Exchange (ETDEWEB)

    Croff, A.G.; Hightower, J.R.; Lee, D.W.; Michaels, G.E.; Ranek, N.L.; Trabalka, J.R.

    2000-06-01

    The Department of Energy (DOE) is in the process of converting about 700,000 metric tons (MT) of depleted uranium hexafluoride (DUF6) containing 475,000 MT of depleted uranium (DU) to a stable form more suitable for long-term storage or disposal. Potential conversion forms include the tetrafluoride (DUF4), oxide (DUO2 or DU3O8), or metal. If worthwhile beneficial uses cannot be found for the DU product form, it will be sent to an appropriate site for disposal. The DU products are considered to be low-level waste (LLW) under both DOE orders and Nuclear Regulatory Commission (NRC) regulations. The objective of this study was to assess the acceptability of the potential DU conversion products at potential LLW disposal sites to provide a basis for DOE decisions on the preferred DU product form and a path forward that will ensure reliable and efficient disposal.

  20. Ecological and corrosion behavior of depleted uranium

    Directory of Open Access Journals (Sweden)

    Stojanović Mirjana D.

    2015-01-01

    Full Text Available Environmental pollution with radionuclides, particularly uranium and its decay products is a serious global problem. The current scientific studies estimated that the contamination originating from TENORM, caused by nuclear and non-nuclear technologies, has significantly increased natural level of radioactivity in the last thirty years. During the last decades all the more were talking about the "new pollutant" - depleted uranium (DU, which has been used in anti-tank penetrators because of its high density, penetration and pyrophoric properties. It is estimated that during the Gulf War, the war in Bosnia and Yugoslavia and during the invasion of Iraq, 1.4 million missiles with depleted uranium was fired. During the NATO aggression against the ex Yugoslavia in 1999., 112 locations in Kosovo and Metohija, 12 locations in southern Serbia and two locations in Montenegro were bombed. On this occasion, approximately 10 tons of depleted uranium were entered into the environment, mainly on land, where the degree of contamination ranged from 200 Bq / kg to 235 000 Bq/kg, which is up to 1000 times higher than the natural level. Fourteen years ago there was very little information about the behavior of ecological systems damaged by DU penetrators fired. Today, unfortunately, we are increasingly faced with the ―invisible threat" of depleted uranium, which has a strong radioactive and hemotoxic impact on human health. Present paper provides a detailed overview of the current understanding of corrosion and corrosion behavior of DU and environmental factors that control corrosion, together with indicators of environmental impact in order to highlight areas that need further attention in developing remediation programs.

  1. The ultimate disposition of depleted uranium

    Energy Technology Data Exchange (ETDEWEB)

    Lemons, T.R. [Uranium Enrichment Organization, Oak Ridge, TN (United States)

    1991-12-31

    Depleted uranium (DU) is produced as a by-product of the uranium enrichment process. Over 340,000 MTU of DU in the form of UF{sub 6} have been accumulated at the US government gaseous diffusion plants and the stockpile continues to grow. An overview of issues and objectives associated with the inventory management and the ultimate disposition of this material is presented.

  2. Effective Depletion Potential of Colloidal Spheres

    Institute of Scientific and Technical Information of China (English)

    LI Wei-Hua; MA Hong-Ru

    2004-01-01

    @@ A new semianalytical method, which is a combination of the density functional theory with Rosenfeld density functional and the Ornstein-Zernike equation, is proposed for the calculation of the effective depletion potentials between a pair of big spheres immersed in a small hard sphere fluid. The calculated results are almost identical to the integral equation method with the Percus-Yevick approximation, and are also in agreement well with the Monte Carlo simulation results.

  3. Land cover classification comparisons among dual polarimetric, pseudo-fully polarimetric, and fully polarimetric SAR imagery

    Science.gov (United States)

    Mishra, Bhogendra; Susaki, Junichi

    2012-10-01

    In this paper, an approach is proposed that predicts fully polarimetric data from dual polarimetric data, and then applies selected supervised algorithm for dual polarimetric, pseudo-fully polarimetric and fully polarimetric dataset for the land cover classification comparison. A regression model has been developed to predict the complex variables of VV polarimetric component and amplitude independently using corresponding complex variables and amplitude in HH and HV bands. Support vector machine (SVM)is implemented for the land cover classification. Coherency matrix and amplitude were used for all dataset for the land cover classification independently.They are used to compare the data from different perspective. Finally, a post processing technique is implemented to remove the isolated pixels appeared as a noise. AVNIR-2 optical data over the same area is used as ground truth data to access the classification accuracy.The result from SVM indicates that the fully polarimetric mode gives the maximum classification accuracy followed by pseudo-fully polarimetric and dual polarimetric datasets using coherency matrix input for fully polarimetric image and pseudo-fully polarimetric image and covariance matrix input for dual polarimetric image. Additionally, it is observed that pseudo-fully polarimetric image with amplitude input does not show the significant improvement over dual polarimetric image with same input.

  4. Barium depletion in hollow cathode emitters

    Energy Technology Data Exchange (ETDEWEB)

    Polk, James E., E-mail: james.e.polk@jpl.nasa.gov; Mikellides, Ioannis G.; Katz, Ira [Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109 (United States); Capece, Angela M. [Graduate Aerospace Laboratories, California Institute of Technology, Pasadena, California 91125 (United States)

    2016-01-14

    Dispenser hollow cathodes rely on a consumable supply of Ba released by BaO-CaO-Al{sub 2}O{sub 3} source material in the pores of a tungsten matrix to maintain a low work function surface. The examination of cathode emitters from long duration tests shows deposits of tungsten at the downstream end that appear to block the flow of Ba from the interior. In addition, a numerical model of Ba transport in the cathode plasma indicates that the Ba partial pressure in the insert may exceed the equilibrium vapor pressure of the dominant Ba-producing reaction, and it was postulated previously that this would suppress Ba loss in the upstream part of the emitter. New measurements of the Ba depletion depth from a cathode insert operated for 8200 h reveal that Ba loss is confined to a narrow region near the downstream end, confirming this hypothesis. The Ba transport model was modified to predict the depletion depth with time. A comparison of the calculated and measured depletion depths gives excellent qualitative agreement, and quantitative agreement was obtained assuming an insert temperature 70 °C lower than measured beginning-of-life values.

  5. Mitochondrial DNA depletion analysis by pseudogene ratioing.

    Science.gov (United States)

    Swerdlow, Russell H; Redpath, Gerard T; Binder, Daniel R; Davis, John N; VandenBerg, Scott R

    2006-01-30

    The mitochondrial DNA (mtDNA) depletion status of rho(0) cell lines is typically assessed by hybridization or polymerase chain reaction (PCR) experiments, in which the failure to hybridize mtDNA or amplify mtDNA using mtDNA-directed primers suggests thorough mitochondrial genome removal. Here, we report the use of an mtDNA pseudogene ratioing technique for the additional confirmation of rho0 status. Total genomic DNA from a U251 human glioma cell line treated with ethidium bromide was amplified using primers designed to anneal either mtDNA or a previously described nuclear DNA-embedded mtDNA pseudogene (mtDNApsi). The resultant PCR product was used to generate plasmid clones. Sixty-two plasmid clones were genotyped, and all arose from mtDNApsi template. These data allowed us to determine with 95% confidence that the resultant mtDNA-depleted cell line contains less than one copy of mtDNA per 10 cells. Unlike previous hybridization or PCR-based analyses of mtDNA depletion, this mtDNApsi ratioing technique does not rely on interpretation of a negative result, and may prove useful as an adjunct for the determination of rho0 status or mtDNA copy number.

  6. Impacts of stratospheric ozone depletion and recovery on wave propagation in the boreal winter stratosphere

    Science.gov (United States)

    Hu, Dingzhu; Tian, Wenshou; Xie, Fei; Wang, Chunxiao; Zhang, Jiankai

    2015-08-01

    This paper uses a state-of-the-art general circulation model to study the impacts of the stratospheric ozone depletion from 1980 to 2000 and the expected partial ozone recovery from 2000 to 2020 on the propagation of planetary waves in December, January, and February. In the Southern Hemisphere (SH), the stratospheric ozone depletion leads to a cooler and stronger Antarctic stratosphere, while the stratospheric ozone recovery has the opposite effects. In the Northern Hemisphere (NH), the impacts of the stratospheric ozone depletion on polar stratospheric temperature are not opposite to that of the stratospheric ozone recovery; i.e., the stratospheric ozone depletion causes a weak cooling and the stratospheric ozone recovery causes a statistically significant cooling. The stratospheric ozone depletion leads to a weakening of the Arctic polar vortex, while the stratospheric ozone recovery leads to a strengthening of the Arctic polar vortex. The cooling of the Arctic polar vortex is found to be dynamically induced via modulating the planetary wave activity by stratospheric ozone increases. Particularly interesting is that stratospheric ozone changes have opposite effects on the stationary and transient wave fluxes in the NH stratosphere. The analysis of the wave refractive index and Eliassen-Palm flux in the NH indicates (1) that the wave refraction in the stratosphere cannot fully explain wave flux changes in the Arctic stratosphere and (2) that stratospheric ozone changes can cause changes in wave propagation in the northern midlatitude troposphere which in turn affect wave fluxes in the NH stratosphere. In the SH, the radiative cooling (warming) caused by stratospheric ozone depletion (recovery) produces a larger (smaller) meridional temperature gradient in the midlatitude upper troposphere, accompanied by larger (smaller) zonal wind vertical shear and larger (smaller) vertical gradients of buoyancy frequency. Hence, there are more (fewer) transient waves

  7. Fully resolved simulations of particle sedimentation

    Science.gov (United States)

    Sierakowski, Adam; Wang, Yayun; Prosperetti, Andrea

    2014-11-01

    Progress in computational capabilities - and specifically in the realm of massively parallel architectures - render possible the simulation of fully resolved fluid-particle systems. This development will drastically improve physical understanding and modelling of these systems when the particle size is not negligible and their concentration appreciable. Using a newly developed GPU-centric implementation of the Physalis method for the solution of the incompressible Navier-Stokes equations in the presence of finite-sized spheres, we carry out fully resolved simulations of more than one thousand sedimenting spheres. We discuss the results of these simulations focusing on statistical aspects such as particle velocity fluctuations, particle pair distribution function, microstructure, and others. Supported by NSF Grant CBET 1335965.

  8. MHD power generation with fully ionized seed

    Energy Technology Data Exchange (ETDEWEB)

    Yamasaki, H.; Shioda, S.

    1977-01-01

    Recovery of power density in the regime of fully ionized seed has been demonstrated experimentally using an MHD disk generator with the effective Hall parameter up to 5.0 when the seed was fully ionized. The experiments were conducted with a shock-heated and potassium-seeded argon plasma under the following conditions: stagnation gas pressure = 0.92 atm, stagnation gas temperature = 2750 K, flow Mach number = 2.5, and seed fraction = 1.4 x 10/sup -5/. Measurements of electron-number density and spectroscopic observations of both potassium and argon lines confirmed that the recovery of power output was due to the reduction of ionization instability. This fact indicates that the successful operation of a disk generator utilizing nonequilibrium ionization seems to be possible and that the suppression of ionization instability can also provide higher adiabatic efficiency. Furthermore, the lower seed fraction offers technological advantages related to seed problems.

  9. Fully Adaptive Radar Modeling and Simulation Development

    Science.gov (United States)

    2017-04-01

    Organization (NATO) Sensors Electronics Technology (SET)-227 Panel on Cognitive Radar. The FAR M&S architecture developed in Phase I allows for...Air Force’s previously developed radar M&S tools. This report is organized as follows. In Chapter 3, we provide an overview of the FAR framework...AFRL-RY-WP-TR-2017-0074 FULLY ADAPTIVE RADAR MODELING AND SIMULATION DEVELOPMENT Kristine L. Bell and Anthony Kellems Metron, Inc

  10. Methylphenidate blocks effort-induced depletion of regulatory control in healthy volunteers.

    Science.gov (United States)

    Sripada, Chandra; Kessler, Daniel; Jonides, John

    2014-06-01

    A recent wave of studies--more than 100 conducted over the last decade--has shown that exerting effort at controlling impulses or behavioral tendencies leaves a person depleted and less able to engage in subsequent rounds of regulation. Regulatory depletion is thought to play an important role in everyday problems (e.g., excessive spending, overeating) as well as psychiatric conditions, but its neurophysiological basis is poorly understood. Using a placebo-controlled, double-blind design, we demonstrated that the psychostimulant methylphenidate (commonly known as Ritalin), a catecholamine reuptake blocker that increases dopamine and norepinephrine at the synaptic cleft, fully blocks effort-induced depletion of regulatory control. Spectral analysis of trial-by-trial reaction times revealed specificity of methylphenidate effects on regulatory depletion in the slow-4 frequency band. This band is associated with the operation of resting-state brain networks that produce mind wandering, which raises potential connections between our results and recent brain-network-based models of control over attention.

  11. Teratogenicity of depleted uranium aerosols: A review from an epidemiological perspective

    Directory of Open Access Journals (Sweden)

    Panikkar Bindu

    2005-08-01

    Full Text Available Abstract Background Depleted uranium is being used increasingly often as a component of munitions in military conflicts. Military personnel, civilians and the DU munitions producers are being exposed to the DU aerosols that are generated. Methods We reviewed toxicological data on both natural and depleted uranium. We included peer reviewed studies and gray literature on birth malformations due to natural and depleted uranium. Our approach was to assess the "weight of evidence" with respect to teratogenicity of depleted uranium. Results Animal studies firmly support the possibility that DU is a teratogen. While the detailed pathways by which environmental DU can be internalized and reach reproductive cells are not yet fully elucidated, again, the evidence supports plausibility. To date, human epidemiological data include case examples, disease registry records, a case-control study and prospective longitudinal studies. Discussion The two most significant challenges to establishing a causal pathway between (human parental DU exposure and the birth of offspring with defects are: i distinguishing the role of DU from that of exposure to other potential teratogens; ii documentation on the individual level of extent of parental DU exposure. Studies that use biomarkers, none yet reported, can help address the latter challenge. Thoughtful triangulation of the results of multiple studies (epidemiological and other of DU teratogenicity contributes to disentangling the roles of various potentially teratogenic parental exposures. This paper is just such an endeavor. Conclusion In aggregate the human epidemiological evidence is consistent with increased risk of birth defects in offspring of persons exposed to DU.

  12. Fully implicit kinetic modelling of collisional plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Mousseau, V.A.

    1996-05-01

    This dissertation describes a numerical technique, Matrix-Free Newton Krylov, for solving a simplified Vlasov-Fokker-Planck equation. This method is both deterministic and fully implicit, and may not have been a viable option before current developments in numerical methods. Results are presented that indicate the efficiency of the Matrix-Free Newton Krylov method for these fully-coupled, nonlinear integro-differential equations. The use and requirement for advanced differencing is also shown. To this end, implementations of Chang-Cooper differencing and flux limited Quadratic Upstream Interpolation for Convective Kinematics (QUICK) are presented. Results are given for a fully kinetic ion-electron problem with a self consistent electric field calculated from the ion and electron distribution functions. This numerical method, including advanced differencing, provides accurate solutions, which quickly converge on workstation class machines. It is demonstrated that efficient steady-state solutions can be achieved to the non-linear integro-differential equation, obtaining quadratic convergence, without incurring the large memory requirements of an integral operator. Model problems are presented which simulate plasma impinging on a plate with both high and low neutral particle recycling typical of a divertor in a Tokamak device. These model problems demonstrate the performance of the new solution method.

  13. (JASR) Vol. 12, No. 2, 2012 DEPLETING FOREST RESOURCES OF ...

    African Journals Online (AJOL)

    HP

    undisturbed lands leading to depletion of the forest cover and increase on the sand dunes .... depletion of the ozone layer leading to a rise in global temperature. ... Nigeria has good correlation with greenhouse gas emission which can cause ...

  14. Depletions at Browns Park National Wildlife Refuge [Draft

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — Estimated depletion associated with the operation of Spitzie Marsh in Browns Park National Wildlife Refuge. Attached are the methods used to estimate depletion....

  15. Self-regulatory depletion increases emotional reactivity in the amygdala

    National Research Council Canada - National Science Library

    Wagner, Dylan D; Heatherton, Todd F

    2013-01-01

    ... attention control task that required effortful inhibition (depletion group) or not (control group). Compared to the control group, depleted participants showed increased activity in the left amygdala to negative but not to positive or neutral scenes...

  16. Macrophage Depletion Impairs Skeletal Muscle Regeneration: the Roles of Pro-fibrotic Factors, Inflammation, and Oxidative Stress.

    Science.gov (United States)

    Xiao, Weihua; Liu, Yu; Chen, Peijie

    2016-12-01

    Muscle contusion is one of the most common muscle injuries in sports medicine. Macrophages play complex roles in the regeneration of skeletal muscle. However, the roles of macrophages, especially the mechanisms involved, in the regeneration of muscle contusion are still not fully understood. We hypothesize that the depletion of macrophages impairs skeletal muscle regeneration and that pro-fibrotic factors, inflammation, and oxidative stress may be involved in the process. To test these hypotheses, we constructed a muscle contusion injury and a macrophage depletion model and followed it up with morphological and gene expression analyses. The data showed that fibrotic scars were formed in the muscle of contusion injury, and they deteriorated in the mice of macrophage depletion. Furthermore, the sizes of regenerating myofibers were significantly reduced by macrophage depletion. Pro-fibrotic factors, inflammatory cytokines, chemokines, and oxidative stress-related enzymes increased significantly after muscle injury. Moreover, the expression of these factors was delayed by macrophage depletion. Most of them were still significantly higher in the later stage of regeneration. These results suggest that macrophage depletion impairs skeletal muscle regeneration and that pro-fibrotic factors, inflammation, and oxidative stress may play important roles in the process.

  17. Children's Models of the Ozone Layer and Ozone Depletion.

    Science.gov (United States)

    Christidou, Vasilia; Koulaidis, Vasilis

    1996-01-01

    The views of 40 primary students on ozone and its depletion were recorded through individual, semi-structured interviews. The data analysis resulted in the formation of a limited number of models concerning the distribution and role of ozone in the atmosphere, the depletion process, and the consequences of ozone depletion. Identifies five target…

  18. Children's Models of the Ozone Layer and Ozone Depletion.

    Science.gov (United States)

    Christidou, Vasilia; Koulaidis, Vasilis

    1996-01-01

    The views of 40 primary students on ozone and its depletion were recorded through individual, semi-structured interviews. The data analysis resulted in the formation of a limited number of models concerning the distribution and role of ozone in the atmosphere, the depletion process, and the consequences of ozone depletion. Identifies five target…

  19. 26 CFR 1.642(e)-1 - Depreciation and depletion.

    Science.gov (United States)

    2010-04-01

    ... 26 Internal Revenue 8 2010-04-01 2010-04-01 false Depreciation and depletion. 1.642(e)-1 Section 1... (CONTINUED) INCOME TAXES Estates, Trusts, and Beneficiaries § 1.642(e)-1 Depreciation and depletion. An estate or trust is allowed the deductions for depreciation and depletion, but only to the extent...

  20. Ozone depletion and solar ultraviolet radiation: ocular effects, a United nations environment programme perspective.

    Science.gov (United States)

    Cullen, Anthony P

    2011-07-01

    To describe he role played by the United Nations Environmental Effects Panel with respect to the ocular effects of stratospheric ozone depletion and present the essence of the Health Chapter of the 2010 Assessment. A consideration of solar ultraviolet radiation (UVR) at the Earth's surface as it is affected by atmospheric changes and how these influence sunlight-related eye diseases. A review of the current Assessment with emphasis on pterygium, cataract, ocular melanoma, and age-related macular degeneration. Although the ozone layer is projected to recover slowly in the coming decades, continuing vigilance is required regarding exposure to the sun. Evidence implicating solar UVR, especially UVB, in every tissue of the eye continues to be amassed. The need for ocular UV protection existed before the discovery of the depletion of the ozone layer and will continue even when the layer fully recovers in approximately 2100.

  1. Capstone Depleted Uranium Aerosols: Generation and Characterization

    Energy Technology Data Exchange (ETDEWEB)

    Parkhurst, MaryAnn; Szrom, Fran; Guilmette, Ray; Holmes, Tom; Cheng, Yung-Sung; Kenoyer, Judson L.; Collins, John W.; Sanderson, T. Ellory; Fliszar, Richard W.; Gold, Kenneth; Beckman, John C.; Long, Julie

    2004-10-19

    In a study designed to provide an improved scientific basis for assessing possible health effects from inhaling depleted uranium (DU) aerosols, a series of DU penetrators was fired at an Abrams tank and a Bradley fighting vehicle. A robust sampling system was designed to collect aerosols in this difficult environment and continuously monitor the sampler flow rates. Aerosols collected were analyzed for uranium concentration and particle size distribution as a function of time. They were also analyzed for uranium oxide phases, particle morphology, and dissolution in vitro. The resulting data provide input useful in human health risk assessments.

  2. Heatstroke Pathophysiology: The Energy Depletion Model

    Science.gov (United States)

    1989-06-12

    Pathophysiology: The Energy Depletion Model Roger W. Hubbard, Ph.D., Director Heat Research Division U. S. Army Research Institute of Environmental...Medicine Natick, MA 01760-5007 USA Send correspondence to: Roger W. Hubbard, Ph.D. Director Heat Research Division USARIEM Kansas St Natick, MA 01760...The NaK-Pump. Part B: Celular Asoects J.C. Skou, J.G. Normy, A.B. Maunsback, and M. Esmann (Eds) New York: Alan R. Uss, 1988, pp. 171-194. 54: Lewis

  3. Scientific assessment of ozone depletion: 1991

    Science.gov (United States)

    1991-01-01

    Over the past few years, there have been highly significant advances in the understanding of the impact of human activities on the Earth's stratospheric ozone layer and the influence of changes in chemical composition of the radiative balance of the climate system. Specifically, since the last international scientific review (1989), there have been five major advances: (1) global ozone decreases; (2) polar ozone; (3) ozone and industrial halocarbons; (4) ozone and climate relations; and (5) ozone depletion potentials (ODP's) and global warming potentials (GWP's). These topics and others are discussed.

  4. Correlation between cosmic rays and ozone depletion.

    Science.gov (United States)

    Lu, Q-B

    2009-03-20

    This Letter reports reliable satellite data in the period of 1980-2007 covering two full 11-yr cosmic ray (CR) cycles, clearly showing the correlation between CRs and ozone depletion, especially the polar ozone loss (hole) over Antarctica. The results provide strong evidence of the physical mechanism that the CR-driven electron-induced reaction of halogenated molecules plays the dominant role in causing the ozone hole. Moreover, this mechanism predicts one of the severest ozone losses in 2008-2009 and probably another large hole around 2019-2020, according to the 11-yr CR cycle.

  5. Optical assessment of phytoplankton nutrient depletion

    DEFF Research Database (Denmark)

    Heath, M.R.; Richardson, Katherine; Kiørboe, Thomas

    1990-01-01

    status (carbon/nitrogen ratio) and the absorption ratio that was independent of light and temperature climate. The absorption ratio for nutrient-replete cells was shown to vary between taxonomic groups. However, the inter-specific variation was less than the differences observed between nutrient......-replete and nutrient-depleted cells. The field data suggest that the absorption ratio may be a useful indicator of nutritional status of natural phytoplankton populations, and can be used to augment the interpretation of other data....

  6. The Time of Shipbuilding Order Depletion

    Institute of Scientific and Technical Information of China (English)

    Reporter Xing Dan

    2012-01-01

    In 2012, shipbuilding market is facing even colder weather. Depletion of orders, deals that can only ensure cost recovery ndustry which has already bankruptcy of ship yards one after another are also torturing this had many uncertainties. Some shipbuilding enterprises are trying to survive by cutting off parts of their business, some enterprises are leaving like the horses migrating on the African grassland, only those horses that have fights with crocodiles will reach the fertile land and enjoy the next warm spring. the business. It is survived the fierce

  7. RESERVOIR CAPACITY DEPLETION ON ACCOUNT OF SEDIMENTATION

    Institute of Scientific and Technical Information of China (English)

    Prabhata K.SWAMEE

    2001-01-01

    Capacity depletion is an important information required for planning of multipurpose reservoirs. It is a complex phenomenon involving diverse fields like surface hydrology, sediment transport, varied flow hydraulics and soil consolidation. Proper assessment of capacity reduction is helpful in ascertaining the life of the reservoir and the project benefits for cost/benefit analysis. In this study dimensionally consistent equations for deposition volume and the trap efficiency have been obtained. Methods of obtaining the parameters involved these equations have also been indicated. It was found that there is good agreement with the field data. It is hoped that the equations are useful to design engineer.

  8. Methods to examine reproductive biology in free-ranging, fully-marine mammals.

    Science.gov (United States)

    Lanyon, Janet M; Burgess, Elizabeth A

    2014-01-01

    Historical overexploitation of marine mammals, combined with present-day pressures, has resulted in severely depleted populations, with many species listed as threatened or endangered. Understanding breeding patterns of threatened marine mammals is crucial to assessing population viability, potential recovery and conservation actions. However, determining reproductive parameters of wild fully-marine mammals (cetaceans and sirenians) is challenging due to their wide distributions, high mobility, inaccessible habitats, cryptic lifestyles and in many cases, large body size and intractability. Consequently, reproductive biologists employ an innovative suite of methods to collect useful information from these species. This chapter reviews historic, recent and state-of-the-art methods to examine diverse aspects of reproduction in fully-aquatic mammals.

  9. SYNTHESIS AND CHARACTERIZATION OF FULLY SOLUBLE POLYPHENYLENEVINYLENE

    Institute of Scientific and Technical Information of China (English)

    Jiang-qing Pan; Zi-kuan Chen; Yang Xiao; Wei Huang

    2000-01-01

    Fully soluble poly[2-methoxy-5-(2'-ethylhexyl)-oxy)-p-phenylenevinylene] (MEH-PPV) was synthesized by the addition of molecular weight modifiers (chain stopper, free radical scavengers) to a polymerization system containing monomer, catalyst and a solvent. These PPV products synthesized in this work were characterized by IR, NMR, UV-visible spectroscopy and GPC. Results show that the Mw of polyphenylvinylene (PPV) can be controlled by the addition of chain stopper (benzyl bromide) and radical inhibitor (2,6-di-tert-butyl-4-methyl phenol). The polymerization mechanism in the presence of these additives was also discussed. A dual mechanism involving carbene for PPV polymerization was proposed.

  10. The fully differential top decay distribution

    Energy Technology Data Exchange (ETDEWEB)

    Aguilar-Saavedra, J.A. [Universidad de Granada, Departamento de Fisica Teorica y del Cosmos, Granada (Spain); Boudreau, J.; Mueller, J. [University of Pittsburgh, Department of Physics and Astronomy, Pittsburgh, PA (United States); Escobar, C. [CSIC-Universitat de Valencia, Instituto de Fisica Corpuscular, Paterna (Spain)

    2017-03-15

    We write down the four-dimensional fully differential decay distribution for the top quark decay t → Wb → lνb. We discuss how its eight physical parameters can be measured, either with a global fit or with the use of selected one-dimensional distributions and asymmetries. We give expressions for the top decay amplitudes for a general tbW interaction, and show how the untangled measurement of the two components of the fraction of longitudinal W bosons - those with b quark helicities of 1/2 and -1/2, respectively - could improve the precision of a global fit to the tbW vertex. (orig.)

  11. Fully Coupled FE Analyses of Buried Structures

    Directory of Open Access Journals (Sweden)

    James T. Baylot

    1994-01-01

    Full Text Available Current procedures for determining the response of buried structures to the effects of the detonation of buried high explosives recommend decoupling the free-field stress analysis from the structure response analysis. A fully coupled (explosive–soil structure finite element analysis procedure was developed so that the accuracies of current decoupling procedures could be evaluated. Comparisons of the results of analyses performed using this procedure with scale-model experiments indicate that this finite element procedure can be used to effectively evaluate the accuracies of the methods currently being used to decouple the free-field stress analysis from the structure response analysis.

  12. Simulations and observations of plasma depletion, ion composition, and airglow emissions in two auroral ionospheric depletion experiments

    Science.gov (United States)

    Yau, A. W.; Whalen, B. A.; Harris, F. R.; Gattinger, R. L.; Pongratz, M. B.

    1985-01-01

    Observations of plasma depletion, ion composition modification, and airglow emissions in the Waterhole experiments are presented. The detailed ion chemistry and airglow emission processes related to the ionospheric hole formation in the experiment are examined, and observations are compared with computer simulation results. The latter indicate that the overall depletion rates in different parts of the depletion region are governed by different parameters.

  13. Glutathione Depletion Induces Spermatogonial Cell Autophagy.

    Science.gov (United States)

    Mancilla, Héctor; Maldonado, Rodrigo; Cereceda, Karina; Villarroel-Espíndola, Franz; Montes de Oca, Marco; Angulo, Constanza; Castro, Maite A; Slebe, Juan C; Vera, Juan C; Lavandero, Sergio; Concha, Ilona I

    2015-10-01

    The development and survival of male germ cells depend on the antioxidant capacity of the seminiferous tubule. Glutathione (GSH) plays an important role in the antioxidant defenses of the spermatogenic epithelium. Autophagy can act as a pro-survival response during oxidative stress or nutrient deficiency. In this work, we evaluated whether autophagy is involved in spermatogonia-type germ cell survival during severe GSH deficiency. We showed that the disruption of GSH metabolism with l-buthionine-(S,R)-sulfoximine (BSO) decreased reduced (GSH), oxidized (GSSG) glutathione content, and GSH/GSSG ratio in germ cells, without altering reactive oxygen species production and cell viability, evaluated by 2',7'-dichlorodihydrofluorescein (DCF) fluorescence and exclusion of propidium iodide assays, respectively. Autophagy was assessed by processing the endogenous protein LC3I and observing its sub-cellular distribution. Immunoblot and immunofluorescence analysis showed a consistent increase in LC3II and accumulation of autophagic vesicles under GSH-depletion conditions. This condition did not show changes in the level of phosphorylation of AMP-activated protein kinase (AMPK) or the ATP content. A loss in S-glutathionylated protein pattern was also observed. However, inhibition of autophagy resulted in decreased ATP content and increased caspase-3/7 activity in GSH-depleted germ cells. These findings suggest that GSH deficiency triggers an AMPK-independent induction of autophagy in germ cells as an adaptive stress response. © 2015 Wiley Periodicals, Inc.

  14. Equatorial airglow depletions induced by thermospheric winds

    Energy Technology Data Exchange (ETDEWEB)

    Meriwether, J.W.; Biondi, M.A.; Anderson, D.N.

    1985-08-01

    Interferometric observations on the 630.0 nm nightglow brightness at the equatorial station at Arequipa, Peru (16.2 S, 71.4 W geographic, 3.2 S dip latitude) have revealed widespread areas of airglow depletion, with reductions in intensity as large as factors of 3 or 4. These depletions correlated closely with large increases of the equatorward (northward) wind and the 630.0 nm kinetic temperature. On occasion, the usually small meridional wind reached a velocity of 100 m/s near 22h LT lasting for 1 to 2 hours. The temperature increases of 100K or more existed only in the poleware (southward) direction. Comparisons with modeling calculations suggest that this effect results from an upward movement of the ionosphere along the inclined magnetic field lines, driven by the equatorward neutral wind. The airglow column integrated emission rate is consequently decreased by the slower rate of formation and subsequent dissociative recombination of molecular oxygen ions within the higher F-layer. We conclude that the transient period of equatorward wind is a result of the passage of the midnight pressure bulge. (Author)

  15. Equatorial airglow depletions induced by thermospheric winds

    Energy Technology Data Exchange (ETDEWEB)

    Meriwether J.W. Jr.; Biondi, M.A.; Anderson, D.N.

    1985-08-01

    Interferometric observations of the 630.0 nm nightglow brightness at the equatorial station of Arequipa. Peru (16.2/sup 0/S, 71.4/sup 0/W geographic, 3.2/sup 0/S dip latitude) have revealed widespread areas of airglow depletion, with reductions in intensity as large as factors of 3 or 4. These depletions correlated closely with large increases of the equatorward (northward) wind and the 630.0 nm kinetic temperature. On occasion, the usually small meridonal wind reached a velocity of 100 m/s near 22/sup h/ LT lasting for 1 or 2 hours. The temperature increases of 10 K or more existed only in the poleward (southward) direction. Comparisons with modeling calculations suggest that this effect results from an upward movement of the ionosphere along the inclined magnetic field lines, driven by the equatorward neutral wind. The airglow column integrated emission rate is consequently decreased by the slower rate of formation and subsequent dissociative recombination of molecular oxygen ions within the higher F-layer. We conclude that the transient period of equatorward wind is a result of the passage of the midnight pressure bulge.

  16. Abundances and Depletions of Interstellar Oxygen

    Science.gov (United States)

    Jensen, A. G.; Rachford, B. L.; Snow, T. P.

    2003-12-01

    We extend previous work on interstellar oxygen abundances with the addition of data from the Far Ultraviolet Spectroscopic Explorer (FUSE). We report on the abundance of interstellar neutral oxygen (OI) for several sightlines, using data from FUSE, the International Spectroscopic Explorer (IUE), and the Hubble Space Telescope (HST). OI column densities are derived by measuring the equivalent widths of several ultraviolet absorption lines, and subsequently fitting those to a curve of growth. The column densities of our best-constrained sightlines show a ratio of O/H that agrees with the current best solar value if dust is considered. We do not see evidence of enhanced depletion of gas-phase oxygen that is systematically variable with respect to the physical parameters of different environments (e.g., reddening or molecular fraction). The column densities of our less well-constrained sightlines show some scatter in O/H, but many agree with the solar value to within errors. We discuss these results in the context of deriving the best methods for determining interstellar abundances, the unresolved question of the best value for O/H in the interstellar medium (ISM), the O/H ratio observed in Galactic stars, and the depletion of gas-phase oxygen onto dust grains. Financial support for this research has been provided by the National Science Foundation GK-12 Program and NASA contract NAS 5-32985.

  17. Fully 3D GPU PET reconstruction

    Energy Technology Data Exchange (ETDEWEB)

    Herraiz, J.L., E-mail: joaquin@nuclear.fis.ucm.es [Grupo de Fisica Nuclear, Departmento Fisica Atomica, Molecular y Nuclear, Universidad Complutense de Madrid (Spain); Espana, S. [Department of Radiation Oncology, Massachusetts General Hospital and Harvard Medical School, Boston, MA (United States); Cal-Gonzalez, J. [Grupo de Fisica Nuclear, Departmento Fisica Atomica, Molecular y Nuclear, Universidad Complutense de Madrid (Spain); Vaquero, J.J. [Departmento de Bioingenieria e Ingenieria Espacial, Universidad Carlos III, Madrid (Spain); Desco, M. [Departmento de Bioingenieria e Ingenieria Espacial, Universidad Carlos III, Madrid (Spain); Unidad de Medicina y Cirugia Experimental, Hospital General Universitario Gregorio Maranon, Madrid (Spain); Udias, J.M. [Grupo de Fisica Nuclear, Departmento Fisica Atomica, Molecular y Nuclear, Universidad Complutense de Madrid (Spain)

    2011-08-21

    Fully 3D iterative tomographic image reconstruction is computationally very demanding. Graphics Processing Unit (GPU) has been proposed for many years as potential accelerators in complex scientific problems, but it has not been used until the recent advances in the programmability of GPUs that the best available reconstruction codes have started to be implemented to be run on GPUs. This work presents a GPU-based fully 3D PET iterative reconstruction software. This new code may reconstruct sinogram data from several commercially available PET scanners. The most important and time-consuming parts of the code, the forward and backward projection operations, are based on an accurate model of the scanner obtained with the Monte Carlo code PeneloPET and they have been massively parallelized on the GPU. For the PET scanners considered, the GPU-based code is more than 70 times faster than a similar code running on a single core of a fast CPU, obtaining in both cases the same images. The code has been designed to be easily adapted to reconstruct sinograms from any other PET scanner, including scanner prototypes.

  18. Fully Equipped Dynamic Model of a Bus

    Directory of Open Access Journals (Sweden)

    I. Kowarska

    2014-01-01

    Full Text Available Nowadays, the time to market a new vehicle is crucial for every company as it is easier to meet the customers’ needs and expectations. However, designing a new vehicle is a long process which needs to take into account different performances. The most difficult is to predict a dynamic behavior of a vehicle especially when such a big vehicles as urban buses are considered. Therefore, there is a necessity to use a virtual model to investigate different performances. However, there is a lack of urban bus models that can fully reflect a dynamic behavior of the bus. This paper presents a fully equipped urban bus model which can be used to study a dynamic behavior of such vehicles. The model is based on innovative technique called cosimulation, which connects different modeling techniques (3D and 1D. Such a technique allows performing different analyses that require small deformations and large translations and rotations in shorter time and automatic way. The work has been carried out in a project EUREKA CHASING.

  19. Fully CMOS-compatible titanium nitride nanoantennas

    Energy Technology Data Exchange (ETDEWEB)

    Briggs, Justin A., E-mail: jabriggs@stanford.edu [Department of Applied Physics, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305 (United States); Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305 (United States); Naik, Gururaj V.; Baum, Brian K.; Dionne, Jennifer A. [Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305 (United States); Petach, Trevor A.; Goldhaber-Gordon, David [Department of Physics, Stanford University, 382 Via Pueblo Mall, Stanford, California 94305 (United States)

    2016-02-01

    CMOS-compatible fabrication of plasmonic materials and devices will accelerate the development of integrated nanophotonics for information processing applications. Using low-temperature plasma-enhanced atomic layer deposition (PEALD), we develop a recipe for fully CMOS-compatible titanium nitride (TiN) that is plasmonic in the visible and near infrared. Films are grown on silicon, silicon dioxide, and epitaxially on magnesium oxide substrates. By optimizing the plasma exposure per growth cycle during PEALD, carbon and oxygen contamination are reduced, lowering undesirable loss. We use electron beam lithography to pattern TiN nanopillars with varying diameters on silicon in large-area arrays. In the first reported single-particle measurements on plasmonic TiN, we demonstrate size-tunable darkfield scattering spectroscopy in the visible and near infrared regimes. The optical properties of this CMOS-compatible material, combined with its high melting temperature and mechanical durability, comprise a step towards fully CMOS-integrated nanophotonic information processing.

  20. Fully CMOS-compatible titanium nitride nanoantennas

    Science.gov (United States)

    Briggs, Justin A.; Naik, Gururaj V.; Petach, Trevor A.; Baum, Brian K.; Goldhaber-Gordon, David; Dionne, Jennifer A.

    2016-02-01

    CMOS-compatible fabrication of plasmonic materials and devices will accelerate the development of integrated nanophotonics for information processing applications. Using low-temperature plasma-enhanced atomic layer deposition (PEALD), we develop a recipe for fully CMOS-compatible titanium nitride (TiN) that is plasmonic in the visible and near infrared. Films are grown on silicon, silicon dioxide, and epitaxially on magnesium oxide substrates. By optimizing the plasma exposure per growth cycle during PEALD, carbon and oxygen contamination are reduced, lowering undesirable loss. We use electron beam lithography to pattern TiN nanopillars with varying diameters on silicon in large-area arrays. In the first reported single-particle measurements on plasmonic TiN, we demonstrate size-tunable darkfield scattering spectroscopy in the visible and near infrared regimes. The optical properties of this CMOS-compatible material, combined with its high melting temperature and mechanical durability, comprise a step towards fully CMOS-integrated nanophotonic information processing.

  1. Development of a Depleted Monolithic CMOS Sensor in a 150 nm CMOS Technology for the ATLAS Inner Tracker Upgrade

    CERN Document Server

    Wang, T.

    2017-01-01

    The recent R&D focus on CMOS sensors with charge collection in a depleted zone has opened new perspectives for CMOS sensors as fast and radiation hard pixel devices. These sensors, labelled as depleted CMOS sensors (DMAPS), have already shown promising performance as feasible candidates for the ATLAS Inner Tracker (ITk) upgrade, possibly replacing the current passive sensors. A further step to exploit the potential of DMAPS is to investigate the suitability of equipping the outer layers of the ATLAS ITk upgrade with fully monolithic CMOS sensors. This paper presents the development of a depleted monolithic CMOS pixel sensor designed in the LFoundry 150 nm CMOS technology, with the focus on design details and simulation results.

  2. Electron Capture in a Fully Ionized Plasma

    CERN Document Server

    Widom, A; Srivastava, Y N

    2014-01-01

    Properties of fully ionized water plasmas are discussed including plasma charge density oscillations and the screening of the Coulomb law especially in the dilute classical Debye regime. A kinetic model with two charged particle scattering events determines the transition rate per unit time for electron capture by a nucleus with the resulting nuclear transmutations. Two corrections to the recent Maiani et al. calculations are made: (i) The Debye screening length is only employed within its proper domain of validity. (ii) The WKB approximation employed by Maiani in the long De Broglie wave length limit is evidently invalid. We replace this incorrect approximation with mathematically rigorous Calogero inequalities in order to discuss the scattering wave functions. Having made these corrections, we find a verification for our previous results based on condensed matter electro-weak quantum field theory for nuclear transmutations in chemical batteries.

  3. A fully quantum model of Big Bang

    CERN Document Server

    Maydanyuk, Sergei P; Olkhovsky, Vladislav S

    2013-01-01

    In the paper the closed Friedmann-Robertson-Walker model with quantization in the presence of the positive cosmological constant and radiation is studied. For analysis of tunneling probability for birth of an asymptotically deSitter, inflationary Universe as a function of the radiation energy a new definition of a "free" wave propagating inside strong fields is proposed. On such a basis, tunneling boundary condition is corrected, penetrability and reflection concerning to the barrier are calculated in fully quantum stationary approach. For the first time non-zero interference between the incident and reflected waves has been taken into account which turns out to play important role inside cosmological potentials and could be explained by non-locality of barriers in quantum mechanics. Inside whole region of energy of radiation the tunneling probability for the birth of the inflationary Universe is found to be close to its value obtained in semiclassical approach. The reflection from the barrier is determined f...

  4. Fully Automatic Expression-Invariant Face Correspondence

    CERN Document Server

    Salazar, Augusto; Shu, Chang; Prieto, Flavio

    2012-01-01

    We consider the problem of computing accurate point-to-point correspondences among a set of human face scans with varying expressions. Our fully automatic approach does not require any manually placed markers on the scan. Instead, the approach learns the locations of a set of landmarks present in a database and uses this knowledge to automatically predict the locations of these landmarks on a newly available scan. The predicted landmarks are then used to compute point-to-point correspondences between a template model and the newly available scan. To accurately fit the expression of the template to the expression of the scan, we use as template a blendshape model. Our algorithm was tested on a database of human faces of different ethnic groups with strongly varying expressions. Experimental results show that the obtained point-to-point correspondence is both highly accurate and consistent for most of the tested 3D face models.

  5. Fully compressive tides in galaxy mergers

    CERN Document Server

    Renaud, Florent; Naab, Thorsten; Theis, Christian

    2009-01-01

    The disruptive effect of galactic tides is a textbook example of gravitational dynamics. However, depending on the shape of the potential, tides can also become fully compressive. When that is the case, they might trigger or strengthen the formation of galactic substructures (star clusters, tidal dwarf galaxies), instead of destroying them. We perform N-body simulations of interacting galaxies to quantify this effect. We demonstrate that tidal compression occurs repeatedly during a galaxy merger, independently of the specific choice of parameterization. With a model tailored to the Antennae galaxies, we show that the distribution of compressive tides matches the locations and timescales of observed substructures. After extending our study to a broad range of parameters, we conclude that neither the importance of the compressive tides (~15% of the stellar mass) nor their duration (~ 10 Myr) are strongly affected by changes in the progenitors' configurations and orbits. Moreover, we show that individual clumps ...

  6. Argentina to fully privatize state owned YPF

    Energy Technology Data Exchange (ETDEWEB)

    1992-10-05

    Argentina's Congress has voted to fully privatize state petroleum company Yacimientos Petroliferos Fiscales (YPF), a move the government expects to net at least $8 billion. Despite some political opposition, the vote was 119-10 in favor, with one abstention and opposition party members refusing to participate in the vote. Argentina's President Carlos Menem had threatened to authorize YPF privatization by decree if there was no quorum for a vote. YPF is responsible for 40% of Argentina's oil production. The country h as been self-sufficient in crude since 1982. Current production is 563,472 b/d, and proved reserves of oil and gas are valued at $7 billion.

  7. A novel fully integrated handheld gamma camera

    Energy Technology Data Exchange (ETDEWEB)

    Massari, R.; Ucci, A.; Campisi, C. [Biostructure and Bioimaging Institute (IBB), National Research Council of Italy (CNR), Rome (Italy); Scopinaro, F. [University of Rome “La Sapienza”, S. Andrea Hospital, Rome (Italy); Soluri, A., E-mail: alessandro.soluri@ibb.cnr.it [Biostructure and Bioimaging Institute (IBB), National Research Council of Italy (CNR), Rome (Italy)

    2016-10-01

    In this paper, we present an innovative, fully integrated handheld gamma camera, namely designed to gather in the same device the gamma ray detector with the display and the embedded computing system. The low power consumption allows the prototype to be battery operated. To be useful in radioguided surgery, an intraoperative gamma camera must be very easy to handle since it must be moved to find a suitable view. Consequently, we have developed the first prototype of a fully integrated, compact and lightweight gamma camera for radiopharmaceuticals fast imaging. The device can operate without cables across the sterile field, so it may be easily used in the operating theater for radioguided surgery. The prototype proposed consists of a Silicon Photomultiplier (SiPM) array coupled with a proprietary scintillation structure based on CsI(Tl) crystals. To read the SiPM output signals, we have developed a very low power readout electronics and a dedicated analog to digital conversion system. One of the most critical aspects we faced designing the prototype was the low power consumption, which is mandatory to develop a battery operated device. We have applied this detection device in the lymphoscintigraphy technique (sentinel lymph node mapping) comparing the results obtained with those of a commercial gamma camera (Philips SKYLight). The results obtained confirm a rapid response of the device and an adequate spatial resolution for the use in the scintigraphic imaging. This work confirms the feasibility of a small gamma camera with an integrated display. This device is designed for radioguided surgery and small organ imaging, but it could be easily combined into surgical navigation systems.

  8. Depleted Uranium Penetrators : Hazards and Safety

    Directory of Open Access Journals (Sweden)

    S. S. Rao

    1997-01-01

    Full Text Available The depleted uranium (DU alloy is a state-of-the-art material for kinetic energy penetrators due to its superior ballistic performance. Several countries use DU penetrators in their main battle tanks. There is no gamma radiation hazard to the crew members from stowage of DO rounds. Open air firing can result in environmental contamination and associated hazards due to airborne particles containing essentially U/sub 3/0/sub 8/ and UO/sub 2/. Inhalation of polluted air only through respirators or nose masks and refraining form ingestion of water or food materials from contaminated environment are safety measures for avoiding exposure to uranium and its toxicity. Infusion of sodium bicarbonate helps in urinary excretion of uranium that may have entered the body.

  9. Arctic Ozone Depletion from UARS MLS Measurements

    Science.gov (United States)

    Manney, G. L.

    1995-01-01

    Microwave Limb Sounder (MLS) measurements of ozone during four Arctic winters are compared. The evolution of ozone in the lower stratosphere is related to temperature, chlorine monoxide (also measured by MLS), and the evolution of the polar vortex. Lagrangian transport calculations using winds from the United Kingdom Meteorological Office's Stratosphere-Troposphere Data Assimilation system are used to estimate to what extent the evolution of lower stratospheric ozone is controlled by dynamics. Observations, along with calculations of the expected dynamical behavior, show evidence for chemical ozone depletion throughout most of the Arctic lower stratospheric vortex during the 1992-93 middle and late winter, and during all of the 1994-95 winter that was observed by MLS. Both of these winters were unusually cold and had unusually cold and had unusually strong Arctic polar vortices compared to meteorological data over the past 17 years.

  10. Ozone depletion following future volcanic eruptions

    Science.gov (United States)

    Eric Klobas, J.; Wilmouth, David M.; Weisenstein, Debra K.; Anderson, James G.; Salawitch, Ross J.

    2017-07-01

    While explosive volcanic eruptions cause ozone loss in the current atmosphere due to an enhancement in the availability of reactive chlorine following the stratospheric injection of sulfur, future eruptions are expected to increase total column ozone as halogen loading approaches preindustrial levels. The timing of this shift in the impact of major volcanic eruptions on the thickness of the ozone layer is poorly known. Modeling four possible climate futures, we show that scenarios with the smallest increase in greenhouse gas concentrations lead to the greatest risk to ozone from heterogeneous chemical processing following future eruptions. We also show that the presence in the stratosphere of bromine from natural, very short-lived biogenic compounds is critically important for determining whether future eruptions will lead to ozone depletion. If volcanic eruptions inject hydrogen halides into the stratosphere, an effect not considered in current ozone assessments, potentially profound reductions in column ozone would result.

  11. Kinetic depletion model for pellet ablation

    Energy Technology Data Exchange (ETDEWEB)

    Kuteev, Boris V. [State Technical Univ., St. Petersburg (Russian Federation)

    2001-11-01

    A kinetic model for depletion effect, which determines pellet ablation when the pellet passes a rational magnetic surface, is formulated. The model predicts a moderate decrease of the ablation rate compared with the earlier considered monoenergy versions [1, 2]. For typical T-10 conditions the ablation rate reduces by a reactor of 2.5 when the 1-mm pellet penetrates through the plasma center. A substantial deceleration of pellets -about 15% per centimeter of low shire rational q region; is predicted. Penetration for Low Field Side and High Field Side injections is considered taking into account modification of the electron distribution function by toroidal magnetic field. It is shown that Shafranov shift and toroidal effects yield the penetration length for HFS injection higher by a factor of 1.5. This fact should be taken into account when plasma-shielding effects on penetration are considered. (author)

  12. Seasonal iron depletion in temperate shelf seas

    Science.gov (United States)

    Birchill, Antony J.; Milne, Angela; Woodward, E. Malcolm S.; Harris, Carolyn; Annett, Amber; Rusiecka, Dagmara; Achterberg, Eric P.; Gledhill, Martha; Ussher, Simon J.; Worsfold, Paul J.; Geibert, Walter; Lohan, Maeve C.

    2017-09-01

    Our study followed the seasonal cycling of soluble (SFe), colloidal (CFe), dissolved (DFe), total dissolvable (TDFe), labile particulate (LPFe), and total particulate (TPFe) iron in the Celtic Sea (NE Atlantic Ocean). Preferential uptake of SFe occurred during the spring bloom, preceding the removal of CFe. Uptake and export of Fe during the spring bloom, coupled with a reduction in vertical exchange, led to Fe deplete surface waters (<0.2 nM DFe; 0.11 nM LPFe, 0.45 nM TDFe, and 1.84 nM TPFe) during summer stratification. Below the seasonal thermocline, DFe concentrations increased from spring to autumn, mirroring NO3- and consistent with supply from remineralized sinking organic material, and cycled independently of particulate Fe over seasonal timescales. These results demonstrate that summer Fe availability is comparable to the seasonally Fe limited Ross Sea shelf and therefore is likely low enough to affect phytoplankton growth and species composition.

  13. Modelling chemical depletion profiles in regolith

    Science.gov (United States)

    Brantley, S.L.; Bandstra, J.; Moore, J.; White, A.F.

    2008-01-01

    Chemical or mineralogical profiles in regolith display reaction fronts that document depletion of leachable elements or minerals. A generalized equation employing lumped parameters was derived to model such ubiquitously observed patterns:C = frac(C0, frac(C0 - Cx = 0, Cx = 0) exp (??ini ?? over(k, ??) ?? x) + 1)Here C, Cx = 0, and Co are the concentrations of an element at a given depth x, at the top of the reaction front, or in parent respectively. ??ini is the roughness of the dissolving mineral in the parent and k???? is a lumped kinetic parameter. This kinetic parameter is an inverse function of the porefluid advective velocity and a direct function of the dissolution rate constant times mineral surface area per unit volume regolith. This model equation fits profiles of concentration versus depth for albite in seven weathering systems and is consistent with the interpretation that the surface area (m2 mineral m- 3 bulk regolith) varies linearly with the concentration of the dissolving mineral across the front. Dissolution rate constants can be calculated from the lumped fit parameters for these profiles using observed values of weathering advance rate, the proton driving force, the geometric surface area per unit volume regolith and parent concentration of albite. These calculated values of the dissolution rate constant compare favorably to literature values. The model equation, useful for reaction fronts in both steady-state erosional and quasi-stationary non-erosional systems, incorporates the variation of reaction affinity using pH as a master variable. Use of this model equation to fit depletion fronts for soils highlights the importance of buffering of pH in the soil system. Furthermore, the equation should allow better understanding of the effects of important environmental variables on weathering rates. ?? 2008.

  14. A novel partial SOI LDMOSFET with periodic buried oxide for breakdown voltage and self heating effect enhancement

    Science.gov (United States)

    Jamali Mahabadi, S. E.; Rajabi, Saba; Loiacono, Julian

    2015-09-01

    In this paper a partial silicon on insulator (PSOI) lateral double diffused metal oxide semiconductor field effect transistor (LDMOSFET) with periodic buried oxide layer (PBO) for enhancing breakdown voltage (BV) and self-heating effects (SHEs) is proposed for the first time. This new structure is called periodic buried oxide partial silicon on insulator (PBO-PSOI). In this structure, periodic small pieces of SiO2 were used as the buried oxide (BOX) layer in PSOI to modulate the electric field in the structure. It was demonstrated that the electric field is distributed more evenly by producing additional electric field peaks, which decrease the common peaks near the drain and gate junctions in the PBO-PSOI structure. Hence, the area underneath the electric field curve increases which leads to higher breakdown voltage. Also a p-type Si window was introduced in the source side to force the substrate to share the vertical voltage drop, leading to a higher vertical BV. Furthermore, the Si window under the source and those between periodic pieces of SiO2 create parallel conduction paths between the active layer and substrate thereby alleviating the SHEs. Simulations with the two dimensional ATLAS device simulator from the Silvaco suite of simulation tools show that the BV of PBO-PSOI is 100% higher than that of the conventional partial SOI (C-PSOI) structure. Furthermore the PBO-PSOI structure alleviates SHEs to a greater extent than its C-PSOI counterpart. The achieved drain current for the PBO-PSOI structure (100 μA), at drain-source voltage of VDS = 100 V and gate-source voltage of VGS = 25 V, is shown to be significantly larger than that in C-PSOI and fully depleted SOI (FD-SOI) structures (87 μA and 51 μA respectively). Drain current can be further improved at the expense of BV by increasing the doping of the drift region.

  15. Engineering aspects of a fully mirrored endoscope

    Energy Technology Data Exchange (ETDEWEB)

    Terra, A., E-mail: a.terra@fz-juelich.de [Institute for Energy and Climate Research IEK-4 (Plasma Physics), Forschungszentrum Jülich GmbH, Assoc. EURATOM-FZJ, Member of the Trilateral Euregio Cluster, D-52425 Jülich (Germany); Huber, A.; Schweer, B.; Mertens, Ph. [Institute for Energy and Climate Research IEK-4 (Plasma Physics), Forschungszentrum Jülich GmbH, Assoc. EURATOM-FZJ, Member of the Trilateral Euregio Cluster, D-52425 Jülich (Germany); Arnoux, G.; Balshaw, N. [Euratom-CCFE Fusion Association, Culham Science Centre, Abingdon, OX14 3DB (United Kingdom); Brezinsek, S. [Institute for Energy and Climate Research IEK-4 (Plasma Physics), Forschungszentrum Jülich GmbH, Assoc. EURATOM-FZJ, Member of the Trilateral Euregio Cluster, D-52425 Jülich (Germany); Egner, S.; Hartl, M.; Kampf, D. [Kayser-Threde GmbH, D-81379 Munich (Germany); Klammer, J. [KRP-Mechatec Engineering GbR, D-85748 Garching (Germany); Lambertz, H.T. [Institute for Energy and Climate Research IEK-4 (Plasma Physics), Forschungszentrum Jülich GmbH, Assoc. EURATOM-FZJ, Member of the Trilateral Euregio Cluster, D-52425 Jülich (Germany); Morlock, C.; Murari, A. [EFDA-CSU, D-85748 Garching (Germany); Reindl, M. [KRP-Mechatec Engineering GbR, D-85748 Garching (Germany); Sanders, S. [Euratom-CCFE Fusion Association, Culham Science Centre, Abingdon, OX14 3DB (United Kingdom); Sergienko, G. [Institute for Energy and Climate Research IEK-4 (Plasma Physics), Forschungszentrum Jülich GmbH, Assoc. EURATOM-FZJ, Member of the Trilateral Euregio Cluster, D-52425 Jülich (Germany); Spencer, G. [Euratom-CCFE Fusion Association, Culham Science Centre, Abingdon, OX14 3DB (United Kingdom); and others

    2013-10-15

    Highlights: ► Replacement of JET diagnostics to match the new ITER-like Wall. ► The endoscope test ITER-like design with only mirror based optics. ► Withstanding and diagnostic capability during Plasma operation and disruptions. ► Engineering process from design to installation and procurement. -- Abstract: The development of optical diagnostics, like endoscopes, compatible with the ITER environment (metallic plasma facing components, neutron proof optics, etc.) is a challenge, but current tokamaks such as JET provide opportunities to test fully working concepts. This paper describes the engineering aspects of a fully mirrored endoscope that has recently been designed, procured and installed on JET. The system must operate in a very strict environment with high temperature, high magnetic fields up to B = 4 T and rapid field variations (∂B/∂t ∼ 100 T/s) that induce high stresses due to eddy currents in the front mirror assembly. It must be designed to withstand high mechanical loads especially during disruptions, which lead to acceleration of about 7 g at 14 Hz. For the JET endoscope, when the plasma thermal loading, direct and indirect, was added to the assumed disruption loads, the reserve factor, defined as a ratio of yield strength over summed up von Mises stresses, was close to 1 for the mirror components. To ensure reliable operation, several analyses were performed to evaluate the thermo-mechanical performance of the endoscope and a final validation was obtained from mechanical and thermal tests, before the system's final installation in May 2011. During the tests, stability of the field of view angle variation was kept below 1° despite the high thermal gradient on endoscope head (∂T/∂x ∼ 500 K/m). In parallel, to ensure long time operation and to prevent undesirable performance degradation, a shutter system was also implemented in order to reduce impurity deposition on in-vessel mirrors but also to allow in situ transmission

  16. Fully 3D refraction correction dosimetry system

    Science.gov (United States)

    Manjappa, Rakesh; Sharath Makki, S.; Kumar, Rajesh; Mohan Vasu, Ram; Kanhirodan, Rajan

    2016-02-01

    The irradiation of selective regions in a polymer gel dosimeter results in an increase in optical density and refractive index (RI) at those regions. An optical tomography-based dosimeter depends on rayline path through the dosimeter to estimate and reconstruct the dose distribution. The refraction of light passing through a dose region results in artefacts in the reconstructed images. These refraction errors are dependant on the scanning geometry and collection optics. We developed a fully 3D image reconstruction algorithm, algebraic reconstruction technique-refraction correction (ART-rc) that corrects for the refractive index mismatches present in a gel dosimeter scanner not only at the boundary, but also for any rayline refraction due to multiple dose regions inside the dosimeter. In this study, simulation and experimental studies have been carried out to reconstruct a 3D dose volume using 2D CCD measurements taken for various views. The study also focuses on the effectiveness of using different refractive-index matching media surrounding the gel dosimeter. Since the optical density is assumed to be low for a dosimeter, the filtered backprojection is routinely used for reconstruction. We carry out the reconstructions using conventional algebraic reconstruction (ART) and refractive index corrected ART (ART-rc) algorithms. The reconstructions based on FDK algorithm for cone-beam tomography has also been carried out for comparison. Line scanners and point detectors, are used to obtain reconstructions plane by plane. The rays passing through dose region with a RI mismatch does not reach the detector in the same plane depending on the angle of incidence and RI. In the fully 3D scanning setup using 2D array detectors, light rays that undergo refraction are still collected and hence can still be accounted for in the reconstruction algorithm. It is found that, for the central region of the dosimeter, the usable radius using ART-rc algorithm with water as RI matched

  17. Fully 3D refraction correction dosimetry system.

    Science.gov (United States)

    Manjappa, Rakesh; Makki, S Sharath; Kumar, Rajesh; Vasu, Ram Mohan; Kanhirodan, Rajan

    2016-02-21

    The irradiation of selective regions in a polymer gel dosimeter results in an increase in optical density and refractive index (RI) at those regions. An optical tomography-based dosimeter depends on rayline path through the dosimeter to estimate and reconstruct the dose distribution. The refraction of light passing through a dose region results in artefacts in the reconstructed images. These refraction errors are dependant on the scanning geometry and collection optics. We developed a fully 3D image reconstruction algorithm, algebraic reconstruction technique-refraction correction (ART-rc) that corrects for the refractive index mismatches present in a gel dosimeter scanner not only at the boundary, but also for any rayline refraction due to multiple dose regions inside the dosimeter. In this study, simulation and experimental studies have been carried out to reconstruct a 3D dose volume using 2D CCD measurements taken for various views. The study also focuses on the effectiveness of using different refractive-index matching media surrounding the gel dosimeter. Since the optical density is assumed to be low for a dosimeter, the filtered backprojection is routinely used for reconstruction. We carry out the reconstructions using conventional algebraic reconstruction (ART) and refractive index corrected ART (ART-rc) algorithms. The reconstructions based on FDK algorithm for cone-beam tomography has also been carried out for comparison. Line scanners and point detectors, are used to obtain reconstructions plane by plane. The rays passing through dose region with a RI mismatch does not reach the detector in the same plane depending on the angle of incidence and RI. In the fully 3D scanning setup using 2D array detectors, light rays that undergo refraction are still collected and hence can still be accounted for in the reconstruction algorithm. It is found that, for the central region of the dosimeter, the usable radius using ART-rc algorithm with water as RI matched

  18. Effect of greenhouse gas emissions on stratospheric ozone depletion

    OpenAIRE

    Velders GJM; LLO

    1997-01-01

    The depletion of the ozone layer is caused mainly by the increase in emissions of chlorine- and bromine-containing compounds like CFCs, halons, carbon tetrachloride, methyl chloroform and methyl bromide. Emissions of greenhouse gases can affect the depletion of the ozone layer through atmospheric interaction. We studied the interactions in the atmosphere between the greenhouse effect and stratospheric ozone depletion from the point of view of past and future emissions of the anthropogenic com...

  19. Effect of greenhouse gas emissions on stratospheric ozone depletion

    OpenAIRE

    Velders GJM; LLO

    1997-01-01

    The depletion of the ozone layer is caused mainly by the increase in emissions of chlorine- and bromine-containing compounds like CFCs, halons, carbon tetrachloride, methyl chloroform and methyl bromide. Emissions of greenhouse gases can affect the depletion of the ozone layer through atmospheric interaction. We studied the interactions in the atmosphere between the greenhouse effect and stratospheric ozone depletion from the point of view of past and future emissions of the anthropogenic com...

  20. A Novel Depletion-Mode MOS Gated Emitter Shorted Thyristor

    Institute of Scientific and Technical Information of China (English)

    张鹤鸣; 戴显英; 张义门; 马晓华; 林大松

    2000-01-01

    A Novel MOS-gated thyristor, depletion-mode MOS gated emitter shorted thyristor (DMST),and its two structures are proposed. In DMST,the channel of depletion-mode MOS makes the thyristor emitter-based junction inherently short. The operation of the device is controlled by the interruption and recovery of the depletion-mode MOS P channel. The perfect properties have been demonstrated by 2-D numerical simulations and the tests on the fabricated chips.

  1. Mantle depletion and metasomatism recorded in orthopyroxene in highly depleted peridotites

    DEFF Research Database (Denmark)

    Scott, James; Liu, Jingao; Pearson, D. Graham;

    2016-01-01

    Although trace element concentrations in clinopyroxene serve as a useful tool for assessing the depletion and enrichment history of mantle peridotites, this is not applicable for peridotites in which the clinopyroxene component has been consumed (~ 25% partial melting). Orthopyroxene persists.......6), high spinel Cr# (commonly > 45) and low orthopyroxene Al2O3 (generally compositions shows that all samples, even the most refractory, have undergone metasomatism by small volume light rare earth element-bearing agents. Measured...

  2. Pluripotency Transcription Factor Oct4 Mediates Stepwise Nucleosome Demethylation and Depletion

    Science.gov (United States)

    Shakya, Arvind; Callister, Catherine; Goren, Alon; Yosef, Nir; Garg, Neha; Khoddami, Vahid; Nix, David; Regev, Aviv

    2015-01-01

    The mechanisms whereby the crucial pluripotency transcription factor Oct4 regulates target gene expression are incompletely understood. Using an assay system based on partially differentiated embryonic stem cells, we show that Oct4 opposes the accumulation of local H3K9me2 and subsequent Dnmt3a-mediated DNA methylation. Upon binding DNA, Oct4 recruits the histone lysine demethylase Jmjd1c. Chromatin immunoprecipitation (ChIP) time course experiments identify a stepwise Oct4 mechanism involving Jmjd1c recruitment and H3K9me2 demethylation, transient FACT (facilitates chromatin transactions) complex recruitment, and nucleosome depletion. Genome-wide and targeted ChIP confirms binding of newly synthesized Oct4, together with Jmjd1c and FACT, to the Pou5f1 enhancer and a small number of other Oct4 targets, including the Nanog promoter. Histone demethylation is required for both FACT recruitment and H3 depletion. Jmjd1c is required to induce endogenous Oct4 expression and fully reprogram fibroblasts to pluripotency, indicating that the assay system identifies functional Oct4 cofactors. These findings indicate that Oct4 sequentially recruits activities that catalyze histone demethylation and depletion. PMID:25582194

  3. Arctic stratospheric ozone depletion and increased UVB radiation: potential impacts to human health.

    Science.gov (United States)

    De Fabo, Edward C

    2005-12-01

    Contrary to popular belief, stratospheric ozone depletion, and the resultant increase in solar UV-B (280-320 nm), are unlikely to fully recover soon. Notwithstanding the success of the Montreal Protocol in reducing the amount of ozone destroying chemicals into the stratosphere, the life-times of these compounds are such that even with full compliance with the Protocol by all countries, it will be decades before stratospheric ozone could return to pre-1980 levels. This raises the question, therefore, of what will happen to biological processes essential to the maintenance of life on earth which are sensitive to damage by increased UV-B radiation, particularly those involved with human health? The polar regions, because of the vagaries of climate and weather, are the bellwether for stratospheric ozone depletion and will, therefore, be the first to experience impacts due to increases in solar UV-B radiation. The impacts of these are incompletely understood and cannot be predicted with certainty. While some UV-B impacts on human health are recognized, much is unknown, unclear and uncertain. Thus, this paper attempts, as a first approximation, to point out potential impacts to the health and welfare of human inhabitants of the Arctic due to increased solar UV-B radiation associated with stratospheric ozone depletion. As will be seen, much more data is critically needed before adequate risk assessment can occur.

  4. Fully Mechanically Controlled Automated Electron Microscopic Tomography

    Science.gov (United States)

    Liu, Jinxin; Li, Hongchang; Zhang, Lei; Rames, Matthew; Zhang, Meng; Yu, Yadong; Peng, Bo; Celis, César Díaz; Xu, April; Zou, Qin; Yang, Xu; Chen, Xuefeng; Ren, Gang

    2016-07-01

    Knowledge of three-dimensional (3D) structures of each individual particles of asymmetric and flexible proteins is essential in understanding those proteins’ functions; but their structures are difficult to determine. Electron tomography (ET) provides a tool for imaging a single and unique biological object from a series of tilted angles, but it is challenging to image a single protein for three-dimensional (3D) reconstruction due to the imperfect mechanical control capability of the specimen goniometer under both a medium to high magnification (approximately 50,000–160,000×) and an optimized beam coherence condition. Here, we report a fully mechanical control method for automating ET data acquisition without using beam tilt/shift processes. This method could reduce the accumulation of beam tilt/shift that used to compensate the error from the mechanical control, but downgraded the beam coherence. Our method was developed by minimizing the error of the target object center during the tilting process through a closed-loop proportional-integral (PI) control algorithm. The validations by both negative staining (NS) and cryo-electron microscopy (cryo-EM) suggest that this method has a comparable capability to other ET methods in tracking target proteins while maintaining optimized beam coherence conditions for imaging.

  5. Fully printed flexible carbon nanotube photodetectors

    Science.gov (United States)

    Zhang, Suoming; Cai, Le; Wang, Tongyu; Miao, Jinshui; Sepúlveda, Nelson; Wang, Chuan

    2017-03-01

    Here, we report fully printed flexible photodetectors based on single-wall carbon nanotubes and the study of their electrical characteristics under laser illumination. Due to the photothermal effect and the use of high purity semiconducting carbon nanotubes, the devices exhibit gate-voltage-dependent photoresponse with the positive photocurrent or semiconductor-like behavior (conductivity increases at elevated temperatures) under positive gate biases and the negative photocurrent or metal-like behavior (conductivity decreases at elevated temperatures) under negative gate biases. Mechanism for such photoresponse is attributed to the different temperature dependencies of carrier concentration and carrier mobility, which are two competing factors that ultimately determine the photothermal effect-based photoresponse. The photodetectors built on the polyimide substrate also exhibit superior mechanical compliance and stable photoresponse after thousands of bending cycles down to a curvature radius as small as 3 mm. Furthermore, due to the low thermal conductivity of the plastic substrate, the devices show up to 6.5 fold improvement in responsivity compared to the devices built on the silicon substrate. The results presented here provide a viable path to low cost and high performance flexible photodetectors fabricated entirely by the printing process.

  6. A fully covariant description of CMB anisotropies

    CERN Document Server

    Dunsby, P K S

    1997-01-01

    Starting from the exact non-linear description of matter and radiation, a fully covariant and gauge-invariant formula for the observed temperature anisotropy of the cosmic microwave background (CBR) radiation, expressed in terms of the electric ($E_{ab}$) and magnetic ($H_{ab}$) parts of the Weyl tensor, is obtained by integrating photon geodesics from last scattering to the point of observation today. This improves and extends earlier work by Russ et al where a similar formula was obtained by taking first order variations of the redshift. In the case of scalar (density) perturbations, $E_{ab}$ is related to the harmonic components of the gravitational potential $\\Phi_k$ and the usual dominant Sachs-Wolfe contribution $\\delta T_R/\\bar{T}_R\\sim\\Phi_k$ to the temperature anisotropy is recovered, together with contributions due to the time variation of the potential (Rees-Sciama effect), entropy and velocity perturbations at last scattering and a pressure suppression term important in low density universes. We a...

  7. Fully inkjet-printed microwave passive electronics

    KAUST Repository

    Mckerricher, Garret

    2017-01-30

    Fully inkjet-printed three-dimensional (3D) objects with integrated metal provide exciting possibilities for on-demand fabrication of radio frequency electronics such as inductors, capacitors, and filters. To date, there have been several reports of printed radio frequency components metallized via the use of plating solutions, sputtering, and low-conductivity pastes. These metallization techniques require rather complex fabrication, and do not provide an easily integrated or versatile process. This work utilizes a novel silver ink cured with a low-cost infrared lamp at only 80 °C, and achieves a high conductivity of 1×107 S m−1. By inkjet printing the infrared-cured silver together with a commercial 3D inkjet ultraviolet-cured acrylic dielectric, a multilayer process is demonstrated. By using a smoothing technique, both the conductive ink and dielectric provide surface roughness values of <500 nm. A radio frequency inductor and capacitor exhibit state-of-the-art quality factors of 8 and 20, respectively, and match well with electromagnetic simulations. These components are implemented in a lumped element radio frequency filter with an impressive insertion loss of 0.8 dB at 1 GHz, proving the utility of the process for sensitive radio frequency applications.

  8. Quantum Optimization of Fully Connected Spin Glasses

    Science.gov (United States)

    Venturelli, Davide; Mandrà, Salvatore; Knysh, Sergey; O'Gorman, Bryan; Biswas, Rupak; Smelyanskiy, Vadim

    2015-07-01

    Many NP-hard problems can be seen as the task of finding a ground state of a disordered highly connected Ising spin glass. If solutions are sought by means of quantum annealing, it is often necessary to represent those graphs in the annealer's hardware by means of the graph-minor embedding technique, generating a final Hamiltonian consisting of coupled chains of ferromagnetically bound spins, whose binding energy is a free parameter. In order to investigate the effect of embedding on problems of interest, the fully connected Sherrington-Kirkpatrick model with random ±1 couplings is programmed on the D-Wave TwoTM annealer using up to 270 qubits interacting on a Chimera-type graph. We present the best embedding prescriptions for encoding the Sherrington-Kirkpatrick problem in the Chimera graph. The results indicate that the optimal choice of embedding parameters could be associated with the emergence of the spin-glass phase of the embedded problem, whose presence was previously uncertain. This optimal parameter setting allows the performance of the quantum annealer to compete with (and potentially outperform, in the absence of analog control errors) optimized simulated annealing algorithms.

  9. Quantum Optimization of Fully Connected Spin Glasses

    Directory of Open Access Journals (Sweden)

    Davide Venturelli

    2015-09-01

    Full Text Available Many NP-hard problems can be seen as the task of finding a ground state of a disordered highly connected Ising spin glass. If solutions are sought by means of quantum annealing, it is often necessary to represent those graphs in the annealer’s hardware by means of the graph-minor embedding technique, generating a final Hamiltonian consisting of coupled chains of ferromagnetically bound spins, whose binding energy is a free parameter. In order to investigate the effect of embedding on problems of interest, the fully connected Sherrington-Kirkpatrick model with random ±1 couplings is programmed on the D-Wave Two^{TM} annealer using up to 270 qubits interacting on a Chimera-type graph. We present the best embedding prescriptions for encoding the Sherrington-Kirkpatrick problem in the Chimera graph. The results indicate that the optimal choice of embedding parameters could be associated with the emergence of the spin-glass phase of the embedded problem, whose presence was previously uncertain. This optimal parameter setting allows the performance of the quantum annealer to compete with (and potentially outperform, in the absence of analog control errors optimized simulated annealing algorithms.

  10. Fully additive copper metallization on BCB

    Energy Technology Data Exchange (ETDEWEB)

    Stolle, T. [FhG-IZM Berlin (Germany); Schwencke, B.; Reichl, H.

    2000-07-01

    A fully additive copper metallization process on benzocyclobutene cyclotene trademark (BCB) has been investigated for application in MCM-D technology. The process consists of surface pretreatment of the BCB basic layer by reactive ion etching (RIE), spin-coating and photopatterning of an organic seed layer by broad-band I-line photolithography followed by developing and activation steps. The metallization of the seed patterns is performed by a 2-step process by means of electroless copper baths. A height of about 5 {mu}m selectively deposited copper can be achieved. The electrical conductivity of patterns is in the range of 80% - 85% of the bulk conductivity of pure copper. Adhesive strength tests during accelerated aging show good adhesion of copper to the BCB surface, which is influenced by RIE pretreatment, exposure dose and thermal load. Shear experiments performed with optimal treated 200 x 200 {mu}m bumps show shear forces > 150 cN. Design rules have to take into account the lateral growth of copper patterns, which is nearly equal to the vertical growth. Real spaces of {>=} 30 {mu}m between copper lines are possible. The process is considered as a low cost technology because of replacing of sputter technique, few process steps and waste reduction. (orig.)

  11. The first LHC sector is fully interconnected

    CERN Multimedia

    2006-01-01

    Sector 7-8 is the first sector of the LHC to become fully operational. All the magnets, cryogenic line, vacuum chambers and services are interconnected. The cool down of this sector can soon commence. LHC project leader Lyn Evans, the teams from CERN's AT/MCS, AT/VAC and AT/MEL groups, and the members of the IEG consortium celebrate the completion of the first LHC sector. The 10th of November was a red letter day for the LHC accelerator teams, marking the completion of the first sector of the machine. The magnets of sector 7-8, together with the cryogenic line, the vacuum chambers and the distribution feedboxes (DFBs) are now all completely interconnected. Sector 7-8 has thus been closed and is the first LHC sector to become operational. The interconnection work required several thousand electrical, cryogenic and insulating connections to be made on the 210 interfaces between the magnets in the arc, the 30 interfaces between the special magnets and the interfaces with the cryogenic line. 'This represent...

  12. The depletion potential in one, two and three dimensions

    Indian Academy of Sciences (India)

    R Roth; P-M König

    2005-06-01

    We study the behavior of the depletion potential in binary mixtures of hard particles in one, two, and three dimensions within the framework of a general theory for depletion potential using density functional theory. By doing so we extend earlier studies of the depletion potential in three dimensions to the cases of = 1 and 2 about which little is known, despite their importance for experiments. We also verify scaling relations between depletion potentials in sphere–sphere and wall–sphere geometries in = 3 and in disk–disk and wall–disk geometries in = 2, which originate from geometrical considerations.

  13. Regret causes ego-depletion and finding benefits in the regrettable events alleviates ego-depletion.

    Science.gov (United States)

    Gao, Hongmei; Zhang, Yan; Wang, Fang; Xu, Yan; Hong, Ying-Yi; Jiang, Jiang

    2014-01-01

    This study tested the hypotheses that experiencing regret would result in ego-depletion, while finding benefits (i.e., "silver linings") in the regret-eliciting events counteracted the ego-depletion effect. Using a modified gambling paradigm (Experiments 1, 2, and 4) and a retrospective method (Experiments 3 and 5), five experiments were conducted to induce regret. Results revealed that experiencing regret undermined performance on subsequent tasks, including a paper-and-pencil calculation task (Experiment 1), a Stroop task (Experiment 2), and a mental arithmetic task (Experiment 3). Furthermore, finding benefits in the regret-eliciting events improved subsequent performance (Experiments 4 and 5), and this improvement was mediated by participants' perceived vitality (Experiment 4). This study extended the depletion model of self-regulation by considering emotions with self-conscious components (in our case, regret). Moreover, it provided a comprehensive understanding of how people felt and performed after experiencing regret and after finding benefits in the events that caused the regret.

  14. If ego depletion cannot be studied using identical tasks, it is not ego depletion.

    Science.gov (United States)

    Lange, Florian

    2015-01-01

    The hypothesis that human self-control capacities are fueled by glucose has been challenged on multiple grounds. A recent study by Lange and Eggert adds to this criticism by presenting two powerful but unsuccessful attempts to replicate the effect of sugar drinks on ego depletion. The dual-task paradigms employed in these experiments have been criticized for involving identical self-control tasks, a methodology that has been argued to reduce participants' willingness to exert self-control. The present article addresses this criticism by demonstrating that there is no indication to believe that the study of glucose effects on ego depletion should be restricted to paradigms using dissimilar acts of self-control. Failures to observe such effects in paradigms involving identical tasks pose a serious problem to the proposal that self-control exhaustion might be reversed by rinsing or ingesting glucose. In combination with analyses of statistical credibility, the experiments by Lange and Eggert suggest that the influence of sugar on ego depletion has been systematically overestimated.

  15. Development and Performance of Kyoto's X-ray Astronomical SOI pixel (SOIPIX) sensor

    CERN Document Server

    Tsuru, Takeshi G; Takeda, Ayaki; Tanaka, Takaaki; Nakashima, Shinya; Arai, Yasuo; Mori, Koji; Takenaka, Ryota; Nishioka, Yusuke; Kohmura, Takayoshi; Hatsui, Takaki; Kameshima, Takashi; Ozaki, Kyosuke; Kohmura, Yoshiki; Wagai, Tatsuya; Takei, Dai; Kawahito, Shoji; Kagawa, Keiichiro; Yasutomi, Keita; Kamehama, Hiroki; Shrestha, Sumeet

    2014-01-01

    We have been developing monolithic active pixel sensors, known as Kyoto's X-ray SOIPIXs, based on the CMOS SOI (silicon-on-insulator) technology for next-generation X-ray astronomy satellites. The event trigger output function implemented in each pixel offers microsecond time resolution and enables reduction of the non-X-ray background that dominates the high X-ray energy band above 5--10 keV. A fully depleted SOI with a thick depletion layer and back illumination offers wide band coverage of 0.3--40 keV. Here, we report recent progress in the X-ray SOIPIX development. In this study, we achieved an energy resolution of 300~eV (FWHM) at 6~keV and a read-out noise of 33~e- (rms) in the frame readout mode, which allows us to clearly resolve Mn-K$\\alpha$ and K$\\beta$. Moreover, we produced a fully depleted layer with a thickness of $500~{\\rm \\mu m}$. The event-driven readout mode has already been successfully demonstrated.

  16. Development and performance of Kyoto's x-ray astronomical SOI pixel (SOIPIX) sensor

    Science.gov (United States)

    Tsuru, Takeshi G.; Matsumura, Hideaki; Takeda, Ayaki; Tanaka, Takaaki; Nakashima, Shinya; Arai, Yasuo; Mori, Koji; Takenaka, Ryota; Nishioka, Yusuke; Kohmura, Takayoshi; Hatsui, Takaki; Kameshima, Takashi; Ozaki, Kyosuke; Kohmura, Yoshiki; Wagai, Tatsuya; Takei, Dai; Kawahito, Shoji; Kagawa, Keiichiro; Yasutomi, Keita; Kamehama, Hiroki

    2014-08-01

    We have been developing monolithic active pixel sensors, known as Kyoto's X-ray SOIPIXs, based on the CMOS SOI (silicon-on-insulator) technology for next-generation X-ray astronomy satellites. The event trigger output function implemented in each pixel offers microsecond time resolution and enables reduction of the non-X-ray background that dominates the high X-ray energy band above 5-10 keV. A fully depleted SOI with a thick depletion layer and back illumination offers wide band coverage of 0.3-40 keV. Here, we report recent progress in the X-ray SOIPIX development. In this study, we achieved an energy resolution of 300 eV (FWHM) at 6 keV and a read-out noise of 33 e- (rms) in the frame readout mode, which allows us to clearly resolve Mn-Kα and Kβ. Moreover, we produced a fully depleted layer with a thickness of 500 μm. The event-driven readout mode has already been successfully demonstrated.

  17. Multi-wavelength imaging observations of plasma depletions over Kavalur, India

    Directory of Open Access Journals (Sweden)

    H. S. S. Sinha

    Full Text Available Observations of ionospheric plasma depletions were made over Kavalur (12.56° N, 78.8° E, Mag. Lat 4.6° N, India during March–pril 1998 using an all sky optical imaging system operating at 630 nm, 777.4 nm and 557.7 nm. Out of 14 nights of observations, plasma depletions were seen only on 9 nights. Except for 21 March 1998, which was a magnetically disturbed period, all other nights belonged to a magnetically quiet period. Some of the important results obtained from these observations are: (a After the onset of the equatorial spread F (ESF, plasma depletions take typically about 2 hrs 40 min to come to a fully developed state, (b There are three distinct types of plasma depletions: type 1 have an east-west (e–w extent of 250–350 km with an inter-depletion distance (IDD of 125–300 km; Type 2 have an e–w extent of 100–150 km and IDD of 50–150 km; Type 3 have smallest the e–w extent (40–100 km and IDD of 20–60 km, (c Most of the observed plasma depletions (> 82% had their eastward velocity in the range of 25–125 ms–1. Almost stationary plasma depletions (0–25 ms–1 were observed on one night, which was magnetically disturbed. These very slow moving depletions appear to be the result of a modification of the F-region dynamo field due to direct penetration of the electric field and/or changes in the neutral winds induced by the magnetic disturbance, (d On the night of 21/22 March 1998, which was a magnetically disturbed period, plasma depletions could be seen simultaneously in all three observing wavelengths, i.e. in 630 nm, 777.4 nm and 557.7 nm. It is believed that this simultaneous occurrence was due to neutral density modifications as a result of enhanced magnetic activity. (e Well developed brightness patterns were observed for the first time in 777.4 nm images. Earlier, such brightness patterns were observed only in 630 nm and 557.7 nm images. These brightness patterns initially appear as very

  18. Tylosin depletion in edible tissues of turkeys.

    Science.gov (United States)

    Montesissa, C; De Liguoro, M; Santi, A; Capolongo, F; Biancotto, G

    1999-10-01

    The depletion of tylosin residues in edible turkey tissues was followed after 3 days of administration of tylosin tartrate at 500 mg l-1 in drinking water, to 30 turkeys. Immediately after the end of the treatment (day 0) and at day 1, 3, 5 and 10 of withdrawal, six turkeys (three males and three females) per time were sacrificed and samples of edible tissues were collected. Tissue homogenates were extracted, purified and analysed by HPLC according to a method previously published for the analysis of tylosin residues in pig tissues. In all tissues, tylosin residues were already below the detection limits of 50 micrograms kg-1 at time zero. However, in several samples of tissues (skin + fat, liver, kidney, muscle), from the six turkeys sacrificed at that time, one peak corresponding to an unknown tylosin equivalent was detected at measurable concentrations. The identification of this unknown compound was performed by LC-MS/MS analysis of the extracts from incurred samples. The mass fragmentation of the compound was consistent with the structure of tylosin D (the alcoholic derivative of tylosin A), the major metabolite of tylosin previously recovered and identified in tissues and/or excreta from treated chickens, cattle and pigs.

  19. The fully nonlinear stratified geostrophic adjustment problem

    Science.gov (United States)

    Coutino, Aaron; Stastna, Marek

    2017-01-01

    The study of the adjustment to equilibrium by a stratified fluid in a rotating reference frame is a classical problem in geophysical fluid dynamics. We consider the fully nonlinear, stratified adjustment problem from a numerical point of view. We present results of smoothed dam break simulations based on experiments in the published literature, with a focus on both the wave trains that propagate away from the nascent geostrophic state and the geostrophic state itself. We demonstrate that for Rossby numbers in excess of roughly 2 the wave train cannot be interpreted in terms of linear theory. This wave train consists of a leading solitary-like packet and a trailing tail of dispersive waves. However, it is found that the leading wave packet never completely separates from the trailing tail. Somewhat surprisingly, the inertial oscillations associated with the geostrophic state exhibit evidence of nonlinearity even when the Rossby number falls below 1. We vary the width of the initial disturbance and the rotation rate so as to keep the Rossby number fixed, and find that while the qualitative response remains consistent, the Froude number varies, and these variations are manifested in the form of the emanating wave train. For wider initial disturbances we find clear evidence of a wave train that initially propagates toward the near wall, reflects, and propagates away from the geostrophic state behind the leading wave train. We compare kinetic energy inside and outside of the geostrophic state, finding that for long times a Rossby number of around one-quarter yields an equal split between the two, with lower (higher) Rossby numbers yielding more energy in the geostrophic state (wave train). Finally we compare the energetics of the geostrophic state as the Rossby number varies, finding long-lived inertial oscillations in the majority of the cases and a general agreement with the past literature that employed either hydrostatic, shallow-water equation-based theory or

  20. Hydrocarbon characterization experiments in fully turbulent fires.

    Energy Technology Data Exchange (ETDEWEB)

    Ricks, Allen; Blanchat, Thomas K.

    2007-05-01

    As the capabilities of numerical simulations increase, decision makers are increasingly relying upon simulations rather than experiments to assess risks across a wide variety of accident scenarios including fires. There are still, however, many aspects of fires that are either not well understood or are difficult to treat from first principles due to the computational expense. For a simulation to be truly predictive and to provide decision makers with information which can be reliably used for risk assessment the remaining physical processes must be studied and suitable models developed for the effects of the physics. The model for the fuel evaporation rate in a liquid fuel pool fire is significant because in well-ventilated fires the evaporation rate largely controls the total heat release rate from the fire. A set of experiments are outlined in this report which will provide data for the development and validation of models for the fuel regression rates in liquid hydrocarbon fuel fires. The experiments will be performed on fires in the fully turbulent scale range (> 1 m diameter) and with a number of hydrocarbon fuels ranging from lightly sooting to heavily sooting. The importance of spectral absorption in the liquid fuels and the vapor dome above the pool will be investigated and the total heat flux to the pool surface will be measured. The importance of convection within the liquid fuel will be assessed by restricting large scale liquid motion in some tests. These data sets will provide a sound, experimentally proven basis for assessing how much of the liquid fuel needs to be modeled to enable a predictive simulation of a fuel fire given the couplings between evaporation of fuel from the pool and the heat release from the fire which drives the evaporation.

  1. Hierarchical structures in fully developed turbulence

    Science.gov (United States)

    Liu, Li

    Analysis of the probability density functions (PDFs) of the velocity increment dvl and of their deformation is used to reveal the statistical structure of the intermittent energy cascade dynamics of turbulence. By analyzing a series of turbulent data sets including that of an experiment of fully developed low temperature helium turbulent gas flow (Belin, Tabeling, & Willaime, Physica D 93, 52, 1996), of a three-dimensional isotropic Navier-Stokes simulation with a resolution of 2563 (Cao, Chen, & She, Phys. Rev. Lett. 76, 3711, 1996) and of a GOY shell model simulation (Leveque & She, Phys. Rev. E 55, 1997) of a very big sample size (up to 5 billions), the validity of the Hierarchical Structure model (She & Leveque, Phys. Rev. Lett. 72, 366, 1994) for the inertial-range is firmly demonstrated. Furthermore, it is shown that parameters in the Hierarchical Structure model can be reliably measured and used to characterize the cascade process. The physical interpretations of the parameters then allow to describe differential changes in different turbulent systems so as to address non-universal features of turbulent systems. It is proposed that the above study provides a framework for the study of non-homogeneous turbulence. A convergence study of moments and scaling exponents is also carried out with detailed analysis of effects of finite statistical sample size. A quantity Pmin is introduced to characterize the resolution of a PDF, and hence the sample size. The fact that any reported scaling exponent depends on the PDF resolution suggests that the validation (or rejection) of a model of turbulence needs to carry out a resolution dependence analysis on its scaling prediction.

  2. Highly efficient fully transparent inverted OLEDs

    Science.gov (United States)

    Meyer, J.; Winkler, T.; Hamwi, S.; Schmale, S.; Kröger, M.; Görrn, P.; Johannes, H.-H.; Riedl, T.; Lang, E.; Becker, D.; Dobbertin, T.; Kowalsky, W.

    2007-09-01

    One of the unique selling propositions of OLEDs is their potential to realize highly transparent devices over the visible spectrum. This is because organic semiconductors provide a large Stokes-Shift and low intrinsic absorption losses. Hence, new areas of applications for displays and ambient lighting become accessible, for instance, the integration of OLEDs into the windshield or the ceiling of automobiles. The main challenge in the realization of fully transparent devices is the deposition of the top electrode. ITO is commonly used as transparent bottom anode in a conventional OLED. To obtain uniform light emission over the entire viewing angle and a low series resistance, a TCO such as ITO is desirable as top contact as well. However, sputter deposition of ITO on top of organic layers causes damage induced by high energetic particles and UV radiation. We have found an efficient process to protect the organic layers against the ITO rf magnetron deposition process of ITO for an inverted OLED (IOLED). The inverted structure allows the integration of OLEDs in more powerful n-channel transistors used in active matrix backplanes. Employing the green electrophosphorescent material Ir(ppy) 3 lead to IOLED with a current efficiency of 50 cd/A and power efficiency of 24 lm/W at 100 cd/m2. The average transmittance exceeds 80 % in the visible region. The on-set voltage for light emission is lower than 3 V. In addition, by vertical stacking we achieved a very high current efficiency of more than 70 cd/A for transparent IOLED.

  3. Podocyte depletion causes glomerulosclerosis: diphtheria toxin-induced podocyte depletion in rats expressing human diphtheria toxin receptor transgene

    National Research Council Canada - National Science Library

    Wharram, Bryan L; Goyal, Meera; Wiggins, Jocelyn E; Sanden, Silja K; Hussain, Sabiha; Filipiak, Wanda E; Saunders, Thomas L; Dysko, Robert C; Kohno, Kenji; Holzman, Lawrence B; Wiggins, Roger C

    2005-01-01

    .... For determining the causal relationship between podocyte depletion and glomerulosclerosis, a transgenic rat strain in which the human diphtheria toxin receptor is specifically expressed in podocytes was developed...

  4. A Monolithic active pixel sensor for ionizing radiation using a 180nm HV-SOI process

    CERN Document Server

    Hemperek, Tomasz; Krüger, Hans; Wermes, Norbert

    2014-01-01

    An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on Partially Depleted High Voltage SOI technology (PD-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer while FD-SOI MAPS suffer from radiation damage such as transistor threshold voltage shifts due to charge traps in the oxide layers and charge states created at the silicon oxide boundaries (back gate effect). The XFAB 180-nm HV-SOI technology offers an additional isolation by deep non-depleted implant between the BOX layer and the active circuitry witch mitigates this problem. Therefore we see in this technology a high potential to implement radiation-tolerant MAPS with fast charge collection property. The design and measurement results from a first prototype are presented including charge collection in neu...

  5. Towards a Scalable Fully-Implicit Fully-coupled Resistive MHD Formulation with Stabilized FE Methods

    Energy Technology Data Exchange (ETDEWEB)

    Shadid, J N; Pawlowski, R P; Banks, J W; Chacon, L; Lin, P T; Tuminaro, R S

    2009-06-03

    This paper presents an initial study that is intended to explore the development of a scalable fully-implicit stabilized unstructured finite element (FE) capability for low-Mach-number resistive MHD. The discussion considers the development of the stabilized FE formulation and the underlying fully-coupled preconditioned Newton-Krylov nonlinear iterative solver. To enable robust, scalable and efficient solution of the large-scale sparse linear systems generated by the Newton linearization, fully-coupled algebraic multilevel preconditioners are employed. Verification results demonstrate the expected order-of-acuracy for the stabilized FE discretization of a 2D vector potential form for the steady and transient solution of the resistive MHD system. In addition, this study puts forth a set of challenging prototype problems that include the solution of an MHD Faraday conduction pump, a hydromagnetic Rayleigh-Bernard linear stability calculation, and a magnetic island coalescence problem. Initial results that explore the scaling of the solution methods are presented on up to 4096 processors for problems with up to 64M unknowns on a CrayXT3/4. Additionally, a large-scale proof-of-capability calculation for 1 billion unknowns for the MHD Faraday pump problem on 24,000 cores is presented.

  6. Fully idempotent near-rings and sheaf representations

    OpenAIRE

    Javed Ahsan; Gordon Mason

    1998-01-01

    Fully idempotent near-rings are defined and characterized which yields information on the lattice of ideals of fully idempotent rings and near-rings. The space of prime ideals is topologized and a sheaf representation is given for a class of fully idempotent near-rings which includes strongly regular near-rings.

  7. 42 CFR 412.340 - Fully prospective payment methodology.

    Science.gov (United States)

    2010-10-01

    ... 42 Public Health 2 2010-10-01 2010-10-01 false Fully prospective payment methodology. 412.340...-Related Costs § 412.340 Fully prospective payment methodology. A hospital paid under the fully prospective payment methodology receives a payment per discharge based on a proportion of the hospital-specific rate...

  8. Effect of greenhouse gas emissions on stratospheric ozone depletion

    NARCIS (Netherlands)

    Velders GJM; LLO

    1997-01-01

    The depletion of the ozone layer is caused mainly by the increase in emissions of chlorine- and bromine-containing compounds like CFCs, halons, carbon tetrachloride, methyl chloroform and methyl bromide. Emissions of greenhouse gases can affect the depletion of the ozone layer through atmospheric i

  9. Effect of greenhouse gas emissions on stratospheric ozone depletion

    NARCIS (Netherlands)

    Velders GJM; LLO

    1997-01-01

    The depletion of the ozone layer is caused mainly by the increase in emissions of chlorine- and bromine-containing compounds like CFCs, halons, carbon tetrachloride, methyl chloroform and methyl bromide. Emissions of greenhouse gases can affect the depletion of the ozone layer through atmospheric

  10. Ozone Depletion Potential of CH3Br

    Science.gov (United States)

    Sander, Stanley P.; Ko, Malcolm K. W.; Sze, Nien Dak; Scott, Courtney; Rodriquez, Jose M.; Weisenstein, Debra K.

    1998-01-01

    The ozone depletion potential (ODP) of methyl bromide (CH3Br) can be determined by combining the model-calculated bromine efficiency factor (BEF) for CH3Br and its atmospheric lifetime. This paper examines how changes in several key kinetic data affect BEF. The key reactions highlighted in this study include the reaction of BrO + H02, the absorption cross section of HOBr, the absorption cross section and the photolysis products of BrON02, and the heterogeneous conversion of BrON02 to HOBR and HN03 on aerosol particles. By combining the calculated BEF with the latest estimate of 0.7 year for the atmospheric lifetime of CH3Br, the likely value of ODP for CH3Br is 0.39. The model-calculated concentration of HBr (approximately 0.3 pptv) in the lower stratosphere is substantially smaller than the reported measured value of about I pptv. Recent publications suggested models can reproduce the measured value if one assumes a yield for HBr from the reaction of BrO + OH or from the reaction of BrO + H02. Although the DeAlore et al. evaluation concluded any substantial yield of HBr from BrO + HO2 is unlikely, for completeness, we calculate the effects of these assumed yields on BEF for CH3Br. Our calculations show that the effects are minimal: practically no impact for an assumed 1.3% yield of HBr from BrO + OH and 10% smaller for an assumed 0.6% yield from BrO + H02.

  11. The Abiotic Depletion Potential: Background, Updates, and Future

    Directory of Open Access Journals (Sweden)

    Lauran van Oers

    2016-03-01

    Full Text Available Depletion of abiotic resources is a much disputed impact category in life cycle assessment (LCA. The reason is that the problem can be defined in different ways. Furthermore, within a specified problem definition, many choices can still be made regarding which parameters to include in the characterization model and which data to use. This article gives an overview of the problem definition and the choices that have been made when defining the abiotic depletion potentials (ADPs for a characterization model for abiotic resource depletion in LCA. Updates of the ADPs since 2002 are also briefly discussed. Finally, some possible new developments of the impact category of abiotic resource depletion are suggested, such as redefining the depletion problem as a dilution problem. This means taking the reserves in the environment and the economy into account in the reserve parameter and using leakage from the economy, instead of extraction rate, as a dilution parameter.

  12. Ozone depletion during solar proton events in solar cycle 21

    Science.gov (United States)

    Mcpeters, R. D.; Jackman, C. H.

    1985-01-01

    Ozone profile data from the Solar Backscattered Ultraviolet Instrument on Nimbus 7 from 1979 to the present and clear cases of ozone destruction associated with five sudden proton events (SPEs) on June 7, 1979, August 21, 1979, October 13-14, 1981, July 13, 1982, and December 8, 1982 are found. During the SPE on July 13, 1982, the largest of this solar cycle, no depletion at all at 45 km is observed, but there is a 15 percent ozone depletion at 50 km increasing to 27 percent at 55 km, all at a solar zenith angle of 85 deg. A strong variation of the observed depletion with solar zenith angle is found, with maximum depletion occurring at the largest zenith angles (near 85 deg) decreasing to near zero for angles below about 70 deg. The observed depletion is short lived, disappearing within hours of the end of the SPE.

  13. Analysis and Application of Whey Protein Depleted Skim Milk Systems

    DEFF Research Database (Denmark)

    Sørensen, Hanne

    homogenisation (UHPH). The microfiltration will result in a milk fraction more or less depleted from whey protein, and could probably in combination with UHPH treatment contribute to milk fractions and cheeses with novel micro and macrostructures. These novel fractions could be used as new ingredients to improve......-destructive methods for this purpose. A significant changed structure was observed in skim milk depleted or partly depleted for whey protein, acidified and UHPH treated. Some of the properties of the UHPH treated skim milk depleted from whey protein observed in this study support the idea, that UHPH treatment has...... this. LF-NMR relaxation were utilised to obtain information about the water mobility (relaxation time), in diluted skim milk systems depleted from whey protein. Obtained results indicate that measuring relaxation times with LF-NMR could be difficult to utilize, since no clear relationship between...

  14. Barium depletion study on impregnated cathodes and lifetime prediction

    Energy Technology Data Exchange (ETDEWEB)

    Roquais, J.M.; Poret, F.; Doze, R. le; Ricaud, J.L.; Monterrin, A.; Steinbrunn, A

    2003-06-15

    In the thermionic cathodes used in cathode ray-tubes (CRTs), barium is the key element for the electronic emission. In the case of the dispenser cathodes made of a porous tungsten pellet impregnated with Ba, Ca aluminates, the evaporation of Ba determines the cathode lifetime with respect to emission performance in the CRT. The Ba evaporation results in progressive depletion of the impregnating material inside the pellet. In the present work, the Ba depletion with time has been extensively characterized over a large range of cathode temperature. Calculations using the depletion data allowed modeling of the depletion as a function of key parameters. The link between measured depletion and emission in tubes has been established, from which an end-of-life criterion was deduced. Taking modeling into account, predicting accelerated life-tests were performed using high-density maximum emission current (MIK)

  15. The effect of ego depletion on sprint start reaction time.

    Science.gov (United States)

    Englert, Chris; Bertrams, Alex

    2014-10-01

    In the current study, we consider that optimal sprint start performance requires the self-control of responses. Therefore, start performance should depend on athletes' self-control strength. We assumed that momentary depletion of self-control strength (ego depletion) would either speed up or slow down the initiation of a sprint start, where an initiation that was sped up would carry the increased risk of a false start. Applying a mixed between- (depletion vs. nondepletion) and within- (before vs. after manipulation of depletion) subjects design, we tested the start reaction times of 37 sport students. We found that participants' start reaction times decelerated after finishing a depleting task, whereas it remained constant in the nondepletion condition. These results indicate that sprint start performance can be impaired by unrelated preceding actions that lower momentary self-control strength. We discuss practical implications in terms of optimizing sprint starts and related overall sprint performance.

  16. Associative Interactions in Crowded Solutions of Biopolymers Counteract Depletion Effects.

    Science.gov (United States)

    Groen, Joost; Foschepoth, David; te Brinke, Esra; Boersma, Arnold J; Imamura, Hiromi; Rivas, Germán; Heus, Hans A; Huck, Wilhelm T S

    2015-10-14

    The cytosol of Escherichia coli is an extremely crowded environment, containing high concentrations of biopolymers which occupy 20-30% of the available volume. Such conditions are expected to yield depletion forces, which strongly promote macromolecular complexation. However, crowded macromolecule solutions, like the cytosol, are very prone to nonspecific associative interactions that can potentially counteract depletion. It remains unclear how the cytosol balances these opposing interactions. We used a FRET-based probe to systematically study depletion in vitro in different crowded environments, including a cytosolic mimic, E. coli lysate. We also studied bundle formation of FtsZ protofilaments under identical crowded conditions as a probe for depletion interactions at much larger overlap volumes of the probe molecule. The FRET probe showed a more compact conformation in synthetic crowding agents, suggesting strong depletion interactions. However, depletion was completely negated in cell lysate and other protein crowding agents, where the FRET probe even occupied slightly more volume. In contrast, bundle formation of FtsZ protofilaments proceeded as readily in E. coli lysate and other protein solutions as in synthetic crowding agents. Our experimental results and model suggest that, in crowded biopolymer solutions, associative interactions counterbalance depletion forces for small macromolecules. Furthermore, the net effects of macromolecular crowding will be dependent on both the size of the macromolecule and its associative interactions with the crowded background.

  17. Properties of wideband resonant reflectors under fully conical light incidence

    OpenAIRE

    Ko, Yeong Hwan; Niraula, Manoj; Lee, Kyu Jin; Magnusson, Robert

    2016-01-01

    Applying numerical modeling coupled with experiments, we investigate the properties of wideband resonant reflectors under fully conical light incidence. We show that the wave vectors pertinent to resonant first-order diffraction under fully conical mounting vary less with incident angle than those associated with reflectors in classical mounting. Therefore, as the evanescent diffracted waves drive the leaky modes responsible for the resonance effects, fully-conical mounting imbues reflectors ...

  18. A Monolithic Active Pixel Sensor for ionizing radiation using a 180 nm HV-SOI process

    Science.gov (United States)

    Hemperek, Tomasz; Kishishita, Tetsuichi; Krüger, Hans; Wermes, Norbert

    2015-10-01

    An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-film High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer. FD-SOI MAPS suffers from radiation damage such as transistor threshold voltage shifts due to charge traps in the oxide layers and charge states created at the silicon oxide boundaries (back gate effect). The X-FAB 180-nm HV-SOI technology offers an additional isolation by deep non-depleted implant between the BOX layer and the active circuitry which mitigates this problem. Therefore we see in this technology a high potential to implement radiation-tolerant MAPS with fast charge collection property. The design and measurement results from a first prototype are presented including charge collection in neutron irradiated samples.

  19. AFSC/REFM: Pacific cod Localized Depletion Study

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Data from Localized Depletion study for Pacific cod 2001-2005. Study was conducted using cod pot gear to measure localized abundance of Pacific cod inside and...

  20. Groundwater depletion in the United States (1900-2008)

    Data.gov (United States)

    U.S. Geological Survey, Department of the Interior — A natural consequence of groundwater withdrawals is the removal of water from subsurface storage, but the overall rates and magnitude of groundwater depletion in the...

  1. Prediction Method of Safety Mud Density in Depleted Oilfields

    Directory of Open Access Journals (Sweden)

    Yuan Jun-Liang

    2013-04-01

    Full Text Available At present, many oilfields were placed in the middle and late development period and the reservoir pressure depleted usually, resulting in more serious differential pressure sticking and drilling mud leakage both in the reservoir and cap rock. In view of this situation, a systematic prediction method of safety mud density in depleted oilfields was established. The influence of reservoir depletion on stress and strength in reservoir and cap formation were both studied and taken into the prediction of safety mud density. The research showed that the risk of differential pressure sticking and drilling mud leakage in reservoir and cap formation were both increased and they were the main prevention object in depleted oilfields drilling. The research results were used to guide the practice drilling work, the whole progress gone smoothly.

  2. Hyperspectral stimulated emission depletion microscopy and methods of use thereof

    Science.gov (United States)

    Timlin, Jerilyn A; Aaron, Jesse S

    2014-04-01

    A hyperspectral stimulated emission depletion ("STED") microscope system for high-resolution imaging of samples labeled with multiple fluorophores (e.g., two to ten fluorophores). The hyperspectral STED microscope includes a light source, optical systems configured for generating an excitation light beam and a depletion light beam, optical systems configured for focusing the excitation and depletion light beams on a sample, and systems for collecting and processing data generated by interaction of the excitation and depletion light beams with the sample. Hyperspectral STED data may be analyzed using multivariate curve resolution analysis techniques to deconvolute emission from the multiple fluorophores. The hyperspectral STED microscope described herein can be used for multi-color, subdiffraction imaging of samples (e.g., materials and biological materials) and for analyzing a tissue by Forster Resonance Energy Transfer ("FRET").

  3. STRATOSPHERIC OZONE DEPLETION: A FOCUS ON EPA'S RESEARCH

    Science.gov (United States)

    In September of 1987 the United States, along with 26 other countries, signed a landmark treaty to limit and subsequently, through revisions, phase out the production of all significant ozone depleting substances. Many researchers suspected that these chemicals, especially chl...

  4. Depletion of microglia exacerbates postischemic inflammation and brain injury

    National Research Council Canada - National Science Library

    Jin, Wei-Na; Shi, Samuel Xiang-Yu; Li, Zhiguo; Li, Minshu; Wood, Kristofer; Gonzales, Rayna J; Liu, Qiang

    2017-01-01

    ...). Although depletion of microglia has been linked to worse stroke outcomes, it remains unclear to what extent and by what mechanisms activated microglia influence ischemia-induced inflammation and injury in the brain...

  5. Background suppression in fluorescence nanoscopy with stimulated emission double depletion

    Science.gov (United States)

    Gao, Peng; Prunsche, Benedikt; Zhou, Lu; Nienhaus, Karin; Nienhaus, G. Ulrich

    2017-01-01

    Stimulated emission depletion (STED) fluorescence nanoscopy is a powerful super-resolution imaging technique based on the confinement of fluorescence emission to the central subregion of an observation volume through de-excitation of fluorophores in the periphery via stimulated emission. Here, we introduce stimulated emission double depletion (STEDD) as a method to selectively remove artificial background intensity. In this approach, a first, conventional STED pulse is followed by a second, delayed Gaussian STED pulse that specifically depletes the central region, thus leaving only background. Thanks to time-resolved detection we can remove this background intensity voxel by voxel by taking the weighted difference of photons collected before and after the second STED pulse. STEDD thus yields background-suppressed super-resolved images as well as STED-based fluorescence correlation spectroscopy data. Furthermore, the proposed method is also beneficial when considering lower-power, less redshifted depletion pulses.

  6. Individual differences in dopamine level modulate the ego depletion effect.

    Science.gov (United States)

    Dang, Junhua; Xiao, Shanshan; Liu, Ying; Jiang, Yumeng; Mao, Lihua

    2016-01-01

    Initial exertion of self-control impairs subsequent self-regulatory performance, which is referred to as the ego depletion effect. The current study examined how individual differences in dopamine level, as indexed by eye blink rate (EBR), would moderate ego depletion. An inverted-U-shaped relationship between EBR and subsequent self-regulatory performance was found when participants initially engaged in self-control but such relationship was absent in the control condition where there was no initial exertion, suggesting individuals with a medium dopamine level may be protected from the typical ego depletion effect. These findings are consistent with a cognitive explanation which considers ego depletion as a phenomenon similar to "switch costs" that would be neutralized by factors promoting flexible switching.

  7. Net depletion determination for Hankin Wetland Development Project

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This memorandum contains the analysis and the data used to produce the net depletion that would occur as a result of the Hankin Wetland Development Project.

  8. Adding trend data to Depletion-Based Stock Reduction Analysis

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — A Bayesian model of Depletion-Based Stock Reduction Analysis (DB-SRA), informed by a time series of abundance indexes, was developed, using the Sampling Importance...

  9. Hydroxide depletion in dilute supernates stored in waste tanks

    Energy Technology Data Exchange (ETDEWEB)

    Hobbs, D.T.

    1985-10-10

    Free hydroxide ion in dilute supernates are depleted by reaction with atmospheric carbon dioxide to form bicarbonate and carbonate species and by reaction with acidic compounds formed by the radiolytic decomposition of tetraphenylborate salts. A model of the kinetics and thermodynamics of absorption of carbon dioxide in the waste tanks has been developed. Forecasts of the rate of hydroxide depletion and the requirements for sodium hydroxide to maintain technical standards have been made for the washed sludge and washed precipitate storage tanks. Hydroxide depletion is predicted to have a minimal impact on sludge processing operations. However, in-tank precipitation and downstream DWPF operations are predicted to be significantly affected by hydroxide depletion in Tank 49H. The installation of a carbon dioxide scrubber on Tank 49H may be justified in view of the decrease in alkali content and variation in the melter feed.

  10. Electronics and Sensor Study with the OKI SOI process

    CERN Document Server

    Arai, Yasuo

    2007-01-01

    While the SOI (Silicon-On-Insulator) device concept is very old, commercialization of the technology is relatively new and growing rapidly in high-speed processor and lowpower applications. Furthermore, features such as latch-up immunity, radiation hardness and high-temperature operation are very attractive in high energy and space applications. Once high-quality bonded SOI wafers became available in the late 90s, it opened up the possibility to get two different kinds of Si on a single wafer. This makes it possible to realize an ideal pixel detector; pairing a fully-depleted radiation sensor with CMOS circuitry in an industrial technology. In 2005 we started Si pixel R&D with OKI Electric Ind. Co., Ltd. which is the first market supplier of Fully-Depleted SOI products. We have developed processes for p+/n+ implants to the substrate and for making connections between the implants and circuits in the OKI 0.15μm FD-SOI CMOS process. We have preformed two Multi Project Wafer (MPW) runs using this SOI proces...

  11. Conditional depletion of nuclear proteins by the Anchor Away system.

    Science.gov (United States)

    Fan, Xiaochun; Geisberg, Joseph V; Wong, Koon Ho; Jin, Yi

    2011-01-01

    Nuclear proteins play key roles in the regulation of many important cellular processes. In Saccharomyces cerevisiae, many genes encoding nuclear proteins are essential. This unit describes a method termed Anchor Away that can be used to conditionally and rapidly deplete nuclear proteins of interest. It involves conditional export of the protein of interest out of the nucleus and its subsequent sequestration in the cytoplasm. This method can be used to simultaneously deplete multiple proteins from the nucleus.

  12. Cholinergic depletion and basal forebrain volume in primary progressive aphasia

    Directory of Open Access Journals (Sweden)

    Jolien Schaeverbeke

    2017-01-01

    In the PPA group, only LV cases showed decreases in AChE activity levels compared to controls. Surprisingly, a substantial number of SV cases showed significant AChE activity increases compared to controls. BF volume did not correlate with AChE activity levels in PPA. To conclude, in our sample of PPA patients, LV but not SV was associated with cholinergic depletion. BF atrophy in PPA does not imply cholinergic depletion.

  13. Inositol depletion restores vesicle transport in yeast phospholipid flippase mutants.

    Science.gov (United States)

    Yamagami, Kanako; Yamamoto, Takaharu; Sakai, Shota; Mioka, Tetsuo; Sano, Takamitsu; Igarashi, Yasuyuki; Tanaka, Kazuma

    2015-01-01

    In eukaryotic cells, type 4 P-type ATPases function as phospholipid flippases, which translocate phospholipids from the exoplasmic leaflet to the cytoplasmic leaflet of the lipid bilayer. Flippases function in the formation of transport vesicles, but the mechanism remains unknown. Here, we isolate an arrestin-related trafficking adaptor, ART5, as a multicopy suppressor of the growth and endocytic recycling defects of flippase mutants in budding yeast. Consistent with a previous report that Art5p downregulates the inositol transporter Itr1p by endocytosis, we found that flippase mutations were also suppressed by the disruption of ITR1, as well as by depletion of inositol from the culture medium. Interestingly, inositol depletion suppressed the defects in all five flippase mutants. Inositol depletion also partially restored the formation of secretory vesicles in a flippase mutant. Inositol depletion caused changes in lipid composition, including a decrease in phosphatidylinositol and an increase in phosphatidylserine. A reduction in phosphatidylinositol levels caused by partially depleting the phosphatidylinositol synthase Pis1p also suppressed a flippase mutation. These results suggest that inositol depletion changes the lipid composition of the endosomal/TGN membranes, which results in vesicle formation from these membranes in the absence of flippases.

  14. The Optimal Depletion of Exhaustible Resource under Different Commitment

    Institute of Scientific and Technical Information of China (English)

    Zhou Wei; Wu Kangping

    2012-01-01

    There are few papers in the literature focusing on the issue of the optimal depletion of exhaustible resources in the framework of variable time preference. This paper attempts to analyze the pure consumption of exhaustible resource under hy- perbolic time preference, and to discuss the optimal depletion rate and the effect of the protection of the exhaustible resource under different commitment abilities. The results of model show that the case of the hyperbolic discount with the full commitment of the govemment is equivalent to the case of constant discount of the social planner problem. In that case, the optimal depletion rate and the initial consumption of exhaustible resource are the slowest. On the contrary, they are the highest and the myopic behaviors lead to excessive consumption of exhaustible resources inevitably without commitment. Otherwise, in the case of partial commit- ment, the results are between the cases of full commitment and of no commitment. Therefore, with the hyperbolic time preference, the optimal depletion rate of resource depends on the commitment ability. Higher commitment ability leads to lower effective rate of time preference, and consequently, lower depletion rate and lower initial depletion value. The improvement of commitment ability can decrease the impatience and myopia behaviors, and contribute to the protection of the exhaustible resources.

  15. Effects of H2 coating of grains on depletion of molecular species

    CERN Document Server

    Morata, Oscar

    2012-01-01

    Physical conditions in dense and cold regions of interstellar clouds favour the formation of ice mantles on the surfaces of interstellar grains. It is predicted that most of the gaseous species heavier than H2 or He will adsorb onto the grains and will disappear from the gas-phase, changing its chemistry, within 10^9/n_H years. Nonetheless, many molecules in molecular clouds are not completely depleted in timescales of 10^5 yr. Several speculative mechanisms have been proposed to explain why molecules stay in the gas phase, but up to now none are fully convincing. At the same time, these mechanisms are not mutually exclusive and we can still explore the effects of other possible processes. We speculate on the consequences of H2 coating of grains on the evaporation rates of adsorbed species. More experiments and simulations are needed to calculate the evaporation rate Eevap(X-H2).

  16. 77 FR 53236 - Proposed International Isotopes Fluorine Extraction Process and Depleted Uranium Deconversion...

    Science.gov (United States)

    2012-08-31

    ... COMMISSION Proposed International Isotopes Fluorine Extraction Process and Depleted Uranium Deconversion... International Isotopes Fluorine Extraction Process and Depleted Uranium Deconversion Plant (INIS) in Lea County... construction, operation, and decommissioning of a fluorine extraction and depleted uranium...

  17. Simulation of the depletion voltage evolution of the ATLAS Pixel Detector

    CERN Document Server

    Beyer, Julien-christopher; The ATLAS collaboration

    2017-01-01

    The ATLAS Pixel detector has been operating since 2010 and consists of hybrid pixel modules where the sensitive elements are planar n-in-n sensors. In order to investigate and predict the evolution of the depletion voltage and of the leakage current in the different layers, a fully analytical implementation of the Hamburg model was derived. The parameters of the model, describing the dependence of the depletion voltage (U_depl) on fluence, temperature and time were tuned with a fit to the available measurements of Udepl in the last years of operation. A particular emphasis is put on the B-Layer, where the highest fluence has been accumulated up to now. A precise input of temperature and radiation dose is generated from the on-module temperature monitoring and the luminosity data. The analysis is then also extended to the Insertable B-Layer (IBL), installed at the end of Run-1, where we expect the fastest evolution of the radiation damage with luminosity, due to its closer position to the interaction point. Di...

  18. Depletion of tumor associated macrophages slows the growth of chemically-induced mouse lung adenocarcinomas

    Directory of Open Access Journals (Sweden)

    Jason M. Fritz

    2014-11-01

    Full Text Available Chronic inflammation is a risk factor for lung cancer, and low dose aspirin intake reduces lung cancer risk. However, the roles that specific inflammatory cells and their products play in lung carcinogenesis have yet to be fully elucidated. In mice, alveolar macrophage numbers increase as lung tumors progress, and pulmonary macrophage programming changes within 2 weeks of carcinogen exposure. To examine how macrophages specifically affect lung tumor progression, they were depleted in mice bearing urethane-induced lung tumors using clodronate-encapsulated liposomes. Alveolar macrophage populations decreased to ≤ 50% of control levels after 4-6 weeks of liposomal clodronate treatment. Tumor burden decreased by 50% compared to vehicle treated mice, and tumor cell proliferation, as measured by Ki67 staining, was also attenuated. Pulmonary fluid levels of IGF-I, CXCL1, IL-6 and CCL2 diminished with clodronate liposome treatment. Tumor associated macrophages expressed markers of both M1 and M2 programming in vehicle and clodronate liposome treated mice. Mice lacking CCR2 (the receptor for macrophage chemotactic factor CCL2 had comparable numbers of alveolar macrophages and showed no difference in tumor growth rates when compared to similarly treated wild-type mice suggesting that while CCL2 may recruit macrophages to lung tumor microenvironments, redundant pathways can compensate when CCL2/CCR2 signaling is inactivated. Depletion of pulmonary macrophages rather than inhibition of their recruitment may be an advantageous strategy for attenuating lung cancer progression.

  19. Unfolding DNA condensates produced by DNA-like charged depletants: A force spectroscopy study

    Science.gov (United States)

    Lima, C. H. M.; Rocha, M. S.; Ramos, E. B.

    2017-02-01

    In this work, we have measured, by means of optical tweezers, forces acting on depletion-induced DNA condensates due to the presence of the DNA-like charged protein bovine serum albumin (BSA). The stretching and unfolding measurements performed on the semi-flexible DNA chain reveal (1) the softening of the uncondensed DNA contour length and (2) a mechanical behavior strikingly different from those previously observed: the force-extension curves of BSA-induced DNA condensates lack the "saw-tooth" pattern and applied external forces as high as ≈80 pN are unable to fully unfold the condensed DNA contour length. This last mechanical experimental finding is in agreement with force-induced "unpacking" detailed Langevin dynamics simulations recently performed by Cortini et al. on model rod-like shaped condensates. Furthermore, a simple thermodynamics analysis of the unfolding process has enabled us to estimate the free energy involved in the DNA condensation: the estimated depletion-induced interactions vary linearly with both the condensed DNA contour length and the BSA concentration, in agreement with the analytical and numerical analysis performed on model DNA condensates. We hope that future additional experiments can decide whether the rod-like morphology is the actual one we are dealing with (e.g. pulling experiments coupled with super-resolution fluorescence microscopy).

  20. Halogens and their role in polar boundary-layer ozone depletion

    Directory of Open Access Journals (Sweden)

    W. R. Simpson

    2007-03-01

    Full Text Available During springtime in the polar regions, unique photochemistry converts inert halide salts ions (e.g. Br into reactive halogen species (e.g. Br atoms and BrO that deplete ozone in the boundary layer to near zero levels. Since their discovery in the late 1980s, research on ozone depletion events (ODEs has made great advances; however many key processes remain poorly understood. In this article we review the history, chemistry, dependence on environmental conditions, and impacts of ODEs. This research has shown the central role of bromine photochemistry, but how salts are transported from the ocean and are oxidized to become reactive halogen species in the air is still not fully understood. Halogens other than bromine (chlorine and iodine are also activated through incompletely understood mechanisms that are probably coupled to bromine chemistry. The main consequence of halogen activation is chemical destruction of ozone, which removes the primary precursor of atmospheric oxidation, and generation of reactive halogen atoms/oxides that become the primary oxidizing species. The different reactivity of halogens as compared to OH and ozone has broad impacts on atmospheric chemistry, including near complete removal and deposition of mercury, alteration of oxidation fates for organic gases, and export of bromine into the free troposphere. Recent changes in the climate of the Arctic and state of the Arctic sea ice cover are likely to have strong effects on halogen activation and ODEs; however, more research is needed to make meaningful predictions of these changes.

  1. Design of a statically balanced fully compliant grasper

    NARCIS (Netherlands)

    Lamers, A.J.; Gallego Sanchez, J.A.; Herder, J.L.

    2015-01-01

    Monolithic and thus fully compliant surgical graspers are promising when they provide equal or better force feedback than conventional graspers. In this work for the first time a fully compliant grasper is designed to exhibit zero stiffness and zero operation force. The design problem is addressed b

  2. A robust TEC depletion detector algorithm for satellite based navigation in Indian zone and depletion analysis for GAGAN

    Science.gov (United States)

    Dashora, Nirvikar

    2012-07-01

    Equatorial plasma bubble (EPB) and associated plasma irregularities are known to cause severe scintillation for the satellite signals and produce range errors, which eventually result either in loss of lock of the signal or in random fluctuation in TEC, respectively, affecting precise positioning and navigation solutions. The EPBs manifest as sudden reduction in line of sight TEC, which are more often called TEC depletions, and are spread over thousands of km in meridional direction and a few hundred km in zonal direction. They change shape and size while drifting from one longitude to another in nighttime ionosphere. For a satellite based navigation system, like GAGAN in India that depends upon (i) multiple satellites (i.e. GPS) (ii) multiple ground reference stations and (iii) a near real time data processing, such EPBs are of grave concern. A TEC model generally provides a near real-time grid based ionospheric vertical errors (GIVEs) over hypothetically spread 5x5 degree latitude-longitude grid points. But, on night when a TEC depletion occurs in a given longitude sector, it is almost impossible for any system to give a forecast of GIVEs. If loss-of-lock events occur due to scintillation, there is no way to improve the situation. But, when large and random depletions in TEC occur with scintillations and without loss-of-lock, it affects low latitude TEC in two ways. (a) Multiple satellites show depleted TEC which may be very different from model-TEC values and hence the GIVE would be incorrect over various grid points (ii) the user may be affected by depletions which are not sampled by reference stations and hence interpolated GIVE within one square would be grossly erroneous. The most general solution (and the far most difficult as well) is having advance knowledge of spatio-temporal occurrence and precise magnitude of such depletions. While forecasting TEC depletions in spatio-temporal domain are a scientific challenge (as we show below), operational systems

  3. Ego depletion decreases trust in economic decision making

    Science.gov (United States)

    Ainsworth, Sarah E.; Baumeister, Roy F.; Vohs, Kathleen D.; Ariely, Dan

    2014-01-01

    Three experiments tested the effects of ego depletion on economic decision making. Participants completed a task either requiring self-control or not. Then participants learned about the trust game, in which senders are given an initial allocation of $10 to split between themselves and another person, the receiver. The receiver receives triple the amount given and can send any, all, or none of the tripled money back to the sender. Participants were assigned the role of the sender and decided how to split the initial allocation. Giving less money, and therefore not trusting the receiver, is the safe, less risky response. Participants who had exerted self-control and were depleted gave the receiver less money than those in the non-depletion condition (Experiment 1). This effect was replicated and moderated in two additional experiments. Depletion again led to lower amounts given (less trust), but primarily among participants who were told they would never meet the receiver (Experiment 2) or who were given no information about how similar they were to the receiver (Experiment 3). Amounts given did not differ for depleted and non-depleted participants who either expected to meet the receiver (Experiment 2) or were led to believe that they were very similar to the receiver (Experiment 3). Decreased trust among depleted participants was strongest among neurotics. These results imply that self-control facilitates behavioral trust, especially when no other cues signal decreased social risk in trusting, such as if an actual or possible relationship with the receiver were suggested. PMID:25013237

  4. Attempted Depletion of Passenger Leukocytes by Irradiation in Pigs

    Directory of Open Access Journals (Sweden)

    Hao-Chih Tai

    2011-01-01

    Full Text Available Allograft/xenograft rejection is associated with “passenger leukocyte” migration from the organ into recipient lymph nodes. In Study 1, we attempted to deplete leukocytes from potential kidney “donor” pigs, using two regimens of total body irradiation. A dose of 700 cGy was administered, followed by either 800 cGy (“low-dose” or 1,300 cGy (“high dose” with the kidneys shielded. Neither regimen was entirely successful in depleting all leukocytes, although remaining T and 8 cell numbers were negligible. Study 2 was aimed at providing an indication of whether near-complete depletion of leukocytes had any major impact on kidney allograft survival. In non-immunosuppressed recipient pigs, survival of a kidney from a donor that received high-dose irradiation was compared with that of a kidney taken from a non-irradiated donor. Kidney graft survival was 9 and 7 days, respectively, suggesting that depletion had little impact on graft survival. The lack of effect may have been related to (i inadequate depletion of passenger leukocytes, thus not preventing a direct T cell response, (ii the presence of dead or dying leukocytes (antigens, thus not preventing an indirect T cell response, or (iii constitutive expression of MHC class II and B7 molecules on the porcine vascular endothelium, activating recipient T cells.

  5. Examining depletion theories under conditions of within-task transfer.

    Science.gov (United States)

    Brewer, Gene A; Lau, Kevin K H; Wingert, Kimberly M; Ball, B Hunter; Blais, Chris

    2017-07-01

    In everyday life, mental fatigue can be detrimental across many domains including driving, learning, and working. Given the importance of understanding and accounting for the deleterious effects of mental fatigue on behavior, a growing body of literature has studied the role of motivational and executive control processes in mental fatigue. In typical laboratory paradigms, participants complete a task that places demand on these self-control processes and are later given a subsequent task. Generally speaking, decrements to subsequent task performance are taken as evidence that the initial task created mental fatigue through the continued engagement of motivational and executive functions. Several models have been developed to account for negative transfer resulting from this "ego depletion." In the current study, we provide a brief literature review, specify current theoretical approaches to ego-depletion, and report an empirical test of current models of depletion. Across 4 experiments we found minimal evidence for executive control depletion along with strong evidence for motivation mediated ego depletion. (PsycINFO Database Record (c) 2017 APA, all rights reserved).

  6. Bond rupture between colloidal particles with a depletion interaction

    Energy Technology Data Exchange (ETDEWEB)

    Whitaker, Kathryn A.; Furst, Eric M., E-mail: furst@udel.edu [Department of Chemical and Biomolecular Engineering and Center for Molecular and Engineering Thermodynamics, University of Delaware, Newark, Delaware 19716 (United States)

    2016-05-15

    The force required to break the bonds of a depletion gel is measured by dynamically loading pairs of colloidal particles suspended in a solution of a nonadsorbing polymer. Sterically stabilized poly(methyl methacrylate) colloids that are 2.7 μm diameter are brought into contact in a solvent mixture of cyclohexane-cyclohexyl bromide and polystyrene polymer depletant. The particle pairs are subject to a tensile load at a constant loading rate over many approach-retraction cycles. The stochastic nature of the thermal rupture events results in a distribution of bond rupture forces with an average magnitude and variance that increases with increasing depletant concentration. The measured force distribution is described by the flux of particle pairs sampling the energy barrier of the bond interaction potential based on the Asakura–Oosawa depletion model. A transition state model demonstrates the significance of lubrication hydrodynamic interactions and the effect of the applied loading rate on the rupture force of bonds in a depletion gel.

  7. Wall depletion length of a channel-confined polymer

    Science.gov (United States)

    Cheong, Guo Kang; Li, Xiaolan; Dorfman, Kevin D.

    2017-02-01

    Numerous experiments have taken advantage of DNA as a model system to test theories for a channel-confined polymer. A tacit assumption in analyzing these data is the existence of a well-defined depletion length characterizing DNA-wall interactions such that the experimental system (a polyelectrolyte in a channel with charged walls) can be mapped to the theoretical model (a neutral polymer with hard walls). We test this assumption using pruned-enriched Rosenbluth method (PERM) simulations of a DNA-like semiflexible polymer confined in a tube. The polymer-wall interactions are modeled by augmenting a hard wall interaction with an exponentially decaying, repulsive soft potential. The free energy, mean span, and variance in the mean span obtained in the presence of a soft wall potential are compared to equivalent simulations in the absence of the soft wall potential to determine the depletion length. We find that the mean span and variance about the mean span have the same depletion length for all soft potentials we tested. In contrast, the depletion length for the confinement free energy approaches that for the mean span only when depletion length no longer depends on channel size. The results have implications for the interpretation of DNA confinement experiments under low ionic strengths.

  8. Depletion of microglia exacerbates postischemic inflammation and brain injury.

    Science.gov (United States)

    Jin, Wei-Na; Shi, Samuel Xiang-Yu; Li, Zhiguo; Li, Minshu; Wood, Kristofer; Gonzales, Rayna J; Liu, Qiang

    2017-06-01

    Brain ischemia elicits microglial activation and microglia survival depend on signaling through colony-stimulating factor 1 receptor (CSF1R). Although depletion of microglia has been linked to worse stroke outcomes, it remains unclear to what extent and by what mechanisms activated microglia influence ischemia-induced inflammation and injury in the brain. Using a mouse model of transient focal cerebral ischemia and reperfusion, we demonstrated that depletion of microglia via administration of the dual CSF1R/c-Kit inhibitor PLX3397 exacerbates neurodeficits and brain infarction. Depletion of microglia augmented the production of inflammatory mediators, leukocyte infiltration, and cell death during brain ischemia. Of note, microglial depletion-induced exacerbation of stroke severity did not solely depend on lymphocytes and monocytes. Importantly, depletion of microglia dramatically augmented the production of inflammatory mediators by astrocytes after brain ischemia . In vitro studies reveal that microglia restricted ischemia-induced astrocyte response and provided neuroprotective effects. Our findings suggest that neuroprotective effects of microglia may result, in part, from its inhibitory action on astrocyte response after ischemia.

  9. The Physical Origin of Long Gas Depletion Times in Galaxies

    Energy Technology Data Exchange (ETDEWEB)

    Semenov, Vadim [Chicago U., Astron. Astrophys. Ctr.; Kravtsov, Andrey [Chicago U., KICP; Gnedin, Nickolay [Fermilab

    2017-04-13

    We present a model that elucidates why gas depletion times in galaxies are long compared to the time scales of the processes driving the evolution of the interstellar medium. We show that global depletion times are not set by any "bottleneck" in the process of gas evolution towards the star-forming state. Instead, depletion times are long because star-forming gas converts only a small fraction of its mass into stars before it is dispersed by dynamical and feedback processes. Thus, complete depletion requires that gas transitions between star-forming and non-star-forming states multiple times. Our model does not rely on the assumption of equilibrium and can be used to interpret trends of depletion times with the properties of observed galaxies and the parameters of star formation and feedback recipes in galaxy simulations. In particular, the model explains the mechanism by which feedback self-regulates star formation rate in simulations and makes it insensitive to the local star formation efficiency. We illustrate our model using the results of an isolated $L_*$-sized disk galaxy simulation that reproduces the observed Kennicutt-Schmidt relation for both molecular and atomic gas. Interestingly, the relation for molecular gas is close to linear on kiloparsec scales, even though a non-linear relation is adopted in simulation cells. This difference is due to stellar feedback, which breaks the self-similar scaling of the gas density PDF with the average gas surface density.

  10. OZONE DEPLETING SUBSTANCES ELIMINATION MANAGEMENT: THE SUCCESS STORY OF MACEDONIA

    Directory of Open Access Journals (Sweden)

    Margarita Matlievska

    2013-04-01

    Full Text Available Man, with its activities, produces and uses substances that have negative impact on the environment and the human health, and can cause an economic damage. Consequently, they have a great impact on quality of life. Among the most harmful chemicals are Ozone Depleting Substances that are subject of regulation with international conventions. This Paper supports the fact that each country has to undertake national efforts for ozone depleting substances reduction and elimination. In that respect, the general objective of the Paper is to present the Macedonian unique experience regarding its efforts to reduce or eliminate these substances. The following two aspects were subject to the research: national legislation which regulates the Ozone Depleting Substances import and export as well as the implementation of the projects that resulted with the elimination of Ozone Depleting Substances quantities in the period 1995 – 2010. The research outcomes confirm the starting research hypothesis i.e. that with adequately created and implemented national action, the amount of Ozone Depleting Substances consumption can dramatically fall.

  11. Global Depletion of Groundwater Resources: Past and Future Analyses

    Science.gov (United States)

    Bierkens, M. F.; de Graaf, I. E. M.; Van Beek, L. P.; Wada, Y.

    2014-12-01

    Globally, about 17% of the crops are irrigated, yet irrigation accounts for 40% of the global food production. As more than 40% of irrigation water comes from groundwater, groundwater abstraction rates are large and exceed natural recharge rates in many regions of the world, thus leading to groundwater depletion. In this paper we provide an overview of recent research on global groundwater depletion. We start with presenting various estimates of global groundwater depletion, both from flux based as well as volume based methods. We also present estimates of the contribution of non-renewable groundwater to irrigation water consumption and how this contribution developed during the last 50 years. Next, using a flux based method, we provide projections of groundwater depletion for the coming century under various socio-economic and climate scenarios. As groundwater depletion contributes to sea-level rise, we also provide estimates of this contribution from the past as well as for future scenarios. Finally, we show recent results of groundwater level changes and change in river flow as a result of global groundwater abstractions as obtained from a global groundwater flow model.

  12. Recovery of the Ozone Layer: The Ozone Depleting Gas Index

    Science.gov (United States)

    Hofmann, David J.; Montzka, Stephen A.

    2009-01-01

    The stratospheric ozone layer, through absorption of solar ultraviolet radiation, protects all biological systems on Earth. In response to concerns over the depletion of the global ozone layer, the U.S. Clean Air Act as amended in 1990 mandates that NASA and NOAA monitor stratospheric ozone and ozone-depleting substances. This information is critical for assessing whether the Montreal Protocol on Substances That Deplete the Ozone Layer, an international treaty that entered into force in 1989 to protect the ozone layer, is having its intended effect of mitigating increases in harmful ultraviolet radiation. To provide the information necessary to satisfy this congressional mandate, both NASA and NOAA have instituted and maintained global monitoring programs to keep track of ozone-depleting gases as well as ozone itself. While data collected for the past 30 years have been used extensively in international assessments of ozone layer depletion science, the language of scientists often eludes the average citizen who has a considerable interest in the health of Earth's protective ultraviolet radiation shield. Are the ozone-destroying chemicals declining in the atmosphere? When will these chemicals decline to pre-ozone hole levels so that the Antarctic ozone hole might disappear? Will this timing be different in the stratosphere above midlatitudes?

  13. Self-regulatory depletion increases emotional reactivity in the amygdala.

    Science.gov (United States)

    Wagner, Dylan D; Heatherton, Todd F

    2013-04-01

    The ability to self-regulate can become impaired when people are required to engage in successive acts of effortful self-control, even when self-control occurs in different domains. Here, we used functional neuroimaging to test whether engaging in effortful inhibition in the cognitive domain would lead to putative dysfunction in the emotional domain. Forty-eight participants viewed images of emotional scenes during functional magnetic resonance imaging in two sessions that were separated by a challenging attention control task that required effortful inhibition (depletion group) or not (control group). Compared to the control group, depleted participants showed increased activity in the left amygdala to negative but not to positive or neutral scenes. Moreover, whereas the control group showed reduced amygdala activity to all scene types (i.e. habituation), the depletion group showed increased amygdala activity relative to their pre-depletion baseline; however this was only significant for negative scenes. Finally, depleted participants showed reduced functional connectivity between the left amygdala and ventromedial prefrontal cortex during negative scene processing. These findings demonstrate that consuming self-regulatory resources leads to an exaggerated neural response to emotional material that appears specific to negatively valenced stimuli and further suggests a failure to recruit top-down prefrontal regions involved in emotion regulation.

  14. A construction of fully diverse unitary space-time codes

    Institute of Scientific and Technical Information of China (English)

    YU Fei; TONG HongXi

    2009-01-01

    Fully diverse unitary space-time codes are useful in multiantenna communications,especially in multiantenna differential modulation.Recently,two constructions of parametric fully diverse unitary space-time codes for three antennas system have been introduced.We propose a new construction method based on the constructions.In the present paper,fully diverse codes for systems of odd prime number antennas are obtained from this construction.Space-time codes from present construction are found to have better error performance than many best known ones.

  15. A construction of fully diverse unitary space-time codes

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Fully diverse unitary space-time codes are useful in multiantenna communications, especially in multiantenna differential modulation. Recently, two constructions of parametric fully diverse unitary space-time codes for three antennas system have been introduced. We propose a new construction method based on the constructions. In the present paper, fully diverse codes for systems of odd prime number antennas are obtained from this construction. Space-time codes from present construction are found to have better error performance than many best known ones.

  16. A CODE DESIGN CRITERIA FOR NOT FULLY CONNECTED CHANNEL

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    There are parallel channels which are not fully connected in practice, such as Frequency DivisionMultiplex (FDM or Orthogonal FDM) systems. Conventional space-time codes can be used for such parallelchannels but not the optimal. Based on the derivation of PEP expression for codes transmitted on parallel blockfading channels, criteria of codes design for not fully connected channels are proposed and are compared withTarokh's criteria for fully connected channel. New codes for such channels are provided by systematical andexhaustive search. Simulation results show that these codes offer better performance on parallel FDM channelsthan other known codes.

  17. Solar ultraviolet radiation and ozone depletion-driven climate change: effects on terrestrial ecosystems.

    Science.gov (United States)

    Bornman, J F; Barnes, P W; Robinson, S A; Ballaré, C L; Flint, S D; Caldwell, M M

    2015-01-01

    In this assessment we summarise advances in our knowledge of how UV-B radiation (280-315 nm), together with other climate change factors, influence terrestrial organisms and ecosystems. We identify key uncertainties and knowledge gaps that limit our ability to fully evaluate the interactive effects of ozone depletion and climate change on these systems. We also evaluate the biological consequences of the way in which stratospheric ozone depletion has contributed to climate change in the Southern Hemisphere. Since the last assessment, several new findings or insights have emerged or been strengthened. These include: (1) the increasing recognition that UV-B radiation has specific regulatory roles in plant growth and development that in turn can have beneficial consequences for plant productivity via effects on plant hardiness, enhanced plant resistance to herbivores and pathogens, and improved quality of agricultural products with subsequent implications for food security; (2) UV-B radiation together with UV-A (315-400 nm) and visible (400-700 nm) radiation are significant drivers of decomposition of plant litter in globally important arid and semi-arid ecosystems, such as grasslands and deserts. This occurs through the process of photodegradation, which has implications for nutrient cycling and carbon storage, although considerable uncertainty exists in quantifying its regional and global biogeochemical significance; (3) UV radiation can contribute to climate change via its stimulation of volatile organic compounds from plants, plant litter and soils, although the magnitude, rates and spatial patterns of these emissions remain highly uncertain at present. UV-induced release of carbon from plant litter and soils may also contribute to global warming; and (4) depletion of ozone in the Southern Hemisphere modifies climate directly via effects on seasonal weather patterns (precipitation and wind) and these in turn have been linked to changes in the growth of plants

  18. Processable high internal phase Pickering emulsions using depletion attraction.

    Science.gov (United States)

    Kim, KyuHan; Kim, Subeen; Ryu, Jiheun; Jeon, Jiyoon; Jang, Se Gyu; Kim, Hyunjun; Gweon, Dae-Gab; Im, Won Bin; Han, Yosep; Kim, Hyunjung; Choi, Siyoung Q

    2017-02-01

    High internal phase emulsions have been widely used as templates for various porous materials, but special strategies are required to form, in particular, particle-covered ones that have been more difficult to obtain. Here, we report a versatile strategy to produce a stable high internal phase Pickering emulsion by exploiting a depletion interaction between an emulsion droplet and a particle using water-soluble polymers as a depletant. This attractive interaction facilitating the adsorption of particles onto the droplet interface and simultaneously suppressing desorption once adsorbed. This technique can be universally applied to nearly any kind of particle to stabilize an interface with the help of various non- or weakly adsorbing polymers as a depletant, which can be solidified to provide porous materials for many applications.

  19. Processable high internal phase Pickering emulsions using depletion attraction

    Science.gov (United States)

    Kim, Kyuhan; Kim, Subeen; Ryu, Jiheun; Jeon, Jiyoon; Jang, Se Gyu; Kim, Hyunjun; Gweon, Dae-Gab; Im, Won Bin; Han, Yosep; Kim, Hyunjung; Choi, Siyoung Q.

    2017-02-01

    High internal phase emulsions have been widely used as templates for various porous materials, but special strategies are required to form, in particular, particle-covered ones that have been more difficult to obtain. Here, we report a versatile strategy to produce a stable high internal phase Pickering emulsion by exploiting a depletion interaction between an emulsion droplet and a particle using water-soluble polymers as a depletant. This attractive interaction facilitating the adsorption of particles onto the droplet interface and simultaneously suppressing desorption once adsorbed. This technique can be universally applied to nearly any kind of particle to stabilize an interface with the help of various non- or weakly adsorbing polymers as a depletant, which can be solidified to provide porous materials for many applications.

  20. Observations of ozone depletion associated with solar proton events

    Science.gov (United States)

    Mcpeters, R. D.; Jackman, C. H.; Stassinopoulos, E. G.

    1981-01-01

    Ozone profiles from the solar proton events (SPE) of January and September 1971 and August 1972 were obtained after the backscattered ultraviolet (BUV) measured radiances were corrected for the direct effects of protons on the instrument. The SPE of August 1972 produced an ozone depletion of 15% at 42 km that persisted for one month in both northern and southern polar regions. This long recovery time indicates that NO(x) was produced in a quantity sufficient to alter the ozone chemistry. The two SPE in 1971 were of moderate size, but produced ozone depletions of 10-30% at 50 km with a 36 hour recovery time. This rapid recovery is consistent with the assumption that HO(x) is responsible for altering the ozone chemistry (Weeks et al., 1972). The magnitude of the observed depletion, however, exceeds that predicted by the chemical models.